Integrated circuit packages and methods of forming same.

Integrated circuit packages and methods of forming same

Номер патента: US09570322B2
Опубликовано: 14-02-2017
Автор(ы): An-Jhih Su, Hsien-Wei Chen
Принадлежит: Taiwan Semiconductor Manufacturing Co TSMC Ltd
Получить PDF файл: Открыть в новом окне

Рисунок 1. Взаимосвязь патентов (ближайшие 20).

Integrated circuit packages and methods of forming same

Номер патента: US09728522B2. Автор: Hsien-Wei Chen,An-Jhih Su. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-08-08.

Integrated circuit package pad and methods of forming

Номер патента: US09812337B2. Автор: Chen-Hua Yu,Hsien-Wei Chen,Der-Chyang Yeh,Wei-Yu Chen,An-Jhih Su,Chi-Hsi Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-11-07.

Microelectronic assemblies with integrated circuits and interposers with cavities, and methods of manufacture

Номер патента: US9536862B2. Автор: HONG Shen,Arkalgud R. Sitaram,Charles G. Woychik. Владелец: Invensas LLC. Дата публикации: 2017-01-03.

Integrated circuit assemblies with reinforcement frames, and methods of manufacture

Номер патента: US09887166B2. Автор: Rajesh Katkar,Arkalgud R. Sitaram,Laura Wills Mirkarimi,Charles G. Woychik. Владелец: Invensas LLC. Дата публикации: 2018-02-06.

Low cost wafer level packages and silicon

Номер патента: US20230032887A1. Автор: Jing-en Luan. Владелец: STMICROELECTRONICS PTE LTD. Дата публикации: 2023-02-02.

Integrated fan-out package and method of fabricating the same

Номер патента: US09837359B1. Автор: Ming-Yen Chiu,Hsin-Chieh Huang,Ching-Fu Chang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-12-05.

Integrated circuit packages and methods of forming the same

Номер патента: US20240234400A1. Автор: Tzuan-Horng LIU,Tsung-Yuan Yu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-11.

Semiconductor Device and Method Forming Same

Номер патента: US20240063204A1. Автор: Chung-Shi Liu,Tsung-Fu Tsai,Szu-Wei Lu,Yi-Jung Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-02-22.

Integrated circuit packaging system with interposer support structure mechanism and method of manufacture thereof

Номер патента: US09859200B2. Автор: Heesoo Lee,HeeJo Chi,KyuSang Kim,YeoChan Ko,SooSan Park,KeoChang Lee. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2018-01-02.

Integrated circuit package and method of forming same

Номер патента: US20240145322A1. Автор: Mark E. Henschel,Chunho Kim. Владелец: MEDTRONIC INC. Дата публикации: 2024-05-02.

Integrated Circuit Package and Method

Номер патента: US20240371726A1. Автор: Chen-Hua Yu,Hao-Yi Tsai,Tin-Hao Kuo,Kuo-Lung Pan,Chien Ling Hwang,Pei-Hsuan Lee,Yu-Chia Lai,Shu-Rong Chun. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-11-07.

Stacked package and a manufacturing method of the same

Номер патента: TWI671876B. Автор: 徐宏欣,方立志,藍源富,陳明志,王啟安,許獻文. Владелец: 力成科技股份有限公司. Дата публикации: 2019-09-11.

Integrated circuit devices including a via and methods of forming the same

Номер патента: US20200144103A1. Автор: Harsono Simka,Jong Hyun Lee,Yung Bae Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-05-07.

Integrated circuit package and method

Номер патента: US20240258187A1. Автор: Chung-Shi Liu,Chien-Hsun Lee,Jiun Yi Wu,Chien-Hsun Chen,Yu-Ling Tsai. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-01.

Integrated circuit package stack

Номер патента: EP3479403A1. Автор: Saikumar Jayaraman,John S. Guzek,Yidnekachew S. MEKONNEN. Владелец: Intel Corp. Дата публикации: 2019-05-08.

Integrated circuit assemblies with reinforcement frames, and methods of manufacture

Номер патента: KR20170013310A. Автор: 라제쉬 카트카르,로라 윌스 미르카리미,아칼거드 알. 시타람,찰스 쥐. 워이칙. Владелец: 인벤사스 코포레이션. Дата публикации: 2017-02-06.

Integrated circuit dies having alignment marks and methods of forming same

Номер патента: US09685411B2. Автор: Hsien-Wei Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-06-20.

Three-dimensional integrated circuit structures providing thermoelectric cooling and methods for cooling such integrated circuit structures

Номер патента: US09847272B2. Автор: WEI Liu,Kheng Chok Tee,Juan Boon Tan,Kam Chew Leong. Владелец: GLOBALFOUNDRIES SINGAPORE PTE LTD. Дата публикации: 2017-12-19.

Integrated circuit device with bonding structure and method of forming the same

Номер патента: US20200395295A1. Автор: Tzu-Ching Tsai. Владелец: Nanya Technology Corp. Дата публикации: 2020-12-17.

Integrated Circuit Packages and Methods of Forming the Same

Номер патента: US20240128194A1. Автор: Ming-Fa Chen,Yun-Han Lee,Lee-Chung Lu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-04-18.

Semiconductor Package and Method of Forming Thereof

Номер патента: US20240021564A1. Автор: Chen-Hua Yu,Jiun Yi Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-01-18.

Integrated circuit package with serpentine conductor and method of making

Номер патента: US12068232B2. Автор: Michael Wang,Liming Tsau,Cheng Lee,Reza Sharifi,Joon Yeob Lee,Junfei Zhu. Владелец: Avago Technologies International Sales Pte Ltd. Дата публикации: 2024-08-20.

Integrated circuit interposer and method of manufacturing the same

Номер патента: US09455193B2. Автор: Ido Bourstein,Carol Pincu. Владелец: Marvell Israel MISL Ltd. Дата публикации: 2016-09-27.

Integrated circuit package with stacked integrated circuit dies and method of fabricating the same

Номер патента: EP4189740A1. Автор: Kuiwon Kang,Joan Rey Villarba Buot,Michelle Yejin Kim,Jialing Tong. Владелец: Qualcomm Inc. Дата публикации: 2023-06-07.

Integrated circuit package with stacked integrated circuit dies and method of fabricating the same

Номер патента: WO2022026078A1. Автор: Kuiwon Kang,Joan Rey Villarba Buot,Michelle Yejin Kim,Jialing Tong. Владелец: QUALCOMM INCORPORATED. Дата публикации: 2022-02-03.

Integrated circuit package, method of fabricating the same, and wearable device including integrated circuit package

Номер патента: US09978693B2. Автор: Young-Hoon Kim,In-Ku Kang,Hee-Yeol KIM,Chan-Hee Jeong,Soo-Jae PARK. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-05-22.

Integrated circuit package, and methods and tools for fabricating the same

Номер патента: US09947560B1. Автор: David Tan,Mohsen H. Mardi,Gamal Refai-Ahmed. Владелец: Xilinx Inc. Дата публикации: 2018-04-17.

Integrated circuit device with shaped leads and method of forming the device

Номер патента: US20160172262A1. Автор: Yiyi Ma,Kim-yong Goh,Xueren Zhang,Wei Zhen Goh. Владелец: STMICROELECTRONICS PTE LTD. Дата публикации: 2016-06-16.

Integrated circuit package and method of forming same

Номер патента: US09850126B2. Автор: Chung-Shi Liu,Hao-Yi Tsai,Yu-feng Chen,Yu-Jen Cheng,Kuo Lung Pan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-12-26.

Integrated circuit package and method

Номер патента: US20240274483A1. Автор: Hsin-Yu Pan,Teng-Yuan Lo,Lipu Kris Chuang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-15.

Integrated circuit package and method of making the same

Номер патента: US20160254216A1. Автор: Chih-Liang Hu. Владелец: Individual. Дата публикации: 2016-09-01.

Integrated circuit package and method of making the same

Номер патента: US09735138B2. Автор: Chih-Liang Hu. Владелец: Individual. Дата публикации: 2017-08-15.

Integrated circuit package and method of forming same

Номер патента: US11935802B2. Автор: Chen-Hua Yu,Ming-Fa Chen,Hsien-Wei Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-03-19.

Underfill structure for semiconductor packages and methods of forming the same

Номер патента: US12080617B2. Автор: Jing-Cheng Lin,Ying-Ching Shih,Szu-Wei Lu,Yu-Wei Chen,Kuan-Yu Huang,Li-Chung Kuo,Long Hua Lee. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-03.

Integrated circuit packaging system with joint assembly and method of manufacture thereof

Номер патента: US09748157B1. Автор: HeeJo Chi,NamJu Cho,HanGil Shin,Kyung Moon Kim. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2017-08-29.

Integrated circuit packaging system with vertical interconnects and method of manufacture thereof

Номер патента: US20120326325A1. Автор: Dongsam Park,A Leam Choi,Yongduk Lee. Владелец: Individual. Дата публикации: 2012-12-27.

Integrated circuit packaging system with substrate and method of manufacture thereof

Номер патента: US09412624B1. Автор: Byung Tai Do,Kyung Moon Kim,Jeffrey David Punzalan,KyungOe Kim,Bartholomew Liao Chung Foh,Dao Nguyen Phu Cuong,Soo Won Lee,SeungYong Chai,Kwok Keung Szeto. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2016-08-09.

Methods of forming integrated circuit packages

Номер патента: US20240379602A1. Автор: Chen-Hua Yu,Wen-Chih Chiou,Shih Ting Lin,Szu-Wei Lu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-11-14.

Integrated circuit device with shaped leads and method of forming the device

Номер патента: US09679870B2. Автор: Yiyi Ma,Kim-yong Goh,Xueren Zhang,Wei Zhen Goh. Владелец: STMICROELECTRONICS PTE LTD. Дата публикации: 2017-06-13.

Semiconductor packages and manufacturing methods for the same

Номер патента: US11735559B2. Автор: Chan Sun Lee. Владелец: SK hynix Inc. Дата публикации: 2023-08-22.

Semiconductor packages and manufacturing methods for the same

Номер патента: US20220359453A1. Автор: Chan Sun Lee. Владелец: SK hynix Inc. Дата публикации: 2022-11-10.

Integrated circuit including back-side wiring and a method of designing the same

Номер патента: US20240243038A1. Автор: Jaehyun LIM,Taehyung Kim,Hoyoung Tang,Eojin LEE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-18.

Integrated circuit including through-silicon via and method of designing the integrated circuit

Номер патента: US20240128164A1. Автор: Taehyung Kim,Youngrok Park,Hoyoung Tang,SangShin Han. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-04-18.

Integrated circuit packaging

Номер патента: US20190206828A1. Автор: Jason Chien,Byron Lovell Williams,Jeffrey Alan West,Honglin Guo,Arvin Nono VERDEFLOR,Anderson LI. Владелец: Texas Instruments Inc. Дата публикации: 2019-07-04.

Integrated circuit packaging

Номер патента: US20200251440A1. Автор: Jason Chien,Byron Lovell Williams,Jeffrey Alan West,Honglin Guo,Arvin Nono VERDEFLOR,Anderson LI. Владелец: Texas Instruments Inc. Дата публикации: 2020-08-06.

Three-dimensional integrated circuit structures and methods of manufacturing the same

Номер патента: US20210020601A1. Автор: Ming-Fa Chen,Hsien-Wei Chen,Sung-Feng Yeh. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-01-21.

Integrated circuit with electrical through-contact and method for producing electrical through-contact

Номер патента: US20140084428A1. Автор: Jörg ZAPF,Harry Hedler,Stefan Wirth,Markus Schieber. Владелец: SIEMENS AG. Дата публикации: 2014-03-27.

Integrated circuit solder die-attach design and method

Номер патента: CA2032266A1. Автор: Michael J. Shannon,Randolf C. Turnidge. Владелец: Hughes Aircraft Co. Дата публикации: 1993-04-06.

Integrated Circuit Multichip Stacked Packaging Structure and Method

Номер патента: US20190326261A1. Автор: Hu Chuan,GUO Yuejin,LIU Junjun,Prack Edward Rudolph. Владелец: . Дата публикации: 2019-10-24.

Integrated circuit multichip stacked packaging structure and method

Номер патента: WO2018098647A1. Автор: 胡川,郭跃进,刘俊军,普莱克爱德华⋅鲁道夫. Владелец: 深圳修远电子科技有限公司. Дата публикации: 2018-06-07.

Electronic package and manufacturing method thereof

Номер патента: US12057409B2. Автор: Chien-Cheng Lin,Wen-Jung Tsai,Chih-Hsien Chiu,Chia-Yang Chen,Yu-Wei Yeh,Ko-Wei Chang,Shun-Yu Chien. Владелец: Siliconware Precision Industries Co Ltd. Дата публикации: 2024-08-06.

3DIC interconnect devices and methods of forming same

Номер патента: US09455158B2. Автор: Szu-Ying Chen,Dun-Nian Yaung,Tzu-Hsuan Hsu,Jeng-Shyan Lin,Feng-Chi Hung,Shu-Ting Tsai. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-09-27.

Integrated Circuit Package and Method

Номер патента: US20200211922A1. Автор: Chen-Hua Yu,Hao-Yi Tsai,Tin-Hao Kuo,Chien Ling Hwang,Pei-Hsuan Lee,Yu-Chia Lai,Shu-Rong Chun,Kuo Lung Pan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-07-02.

Integrated circuit packaging system with photoimagable dielectric-defined trace and method of manufacture thereof

Номер патента: US09406531B1. Автор: HeeJo Chi,Zigmund Ramirez Camacho,Bartholomew Liao Chung Foh,Sheila Marie L. Alvarez,Dao Nguyen Phu Cuong. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2016-08-02.

Integrated circuit assembly with heat spreader and method of making the same

Номер патента: US09978663B2. Автор: Amir Amirkhany,T. Gary Yip. Владелец: Samsung Display Co Ltd. Дата публикации: 2018-05-22.

Carrier film and integrated circuit device using the same and method of making the same

Номер патента: US6078104A. Автор: Kazunori Sakurai. Владелец: Seiko Epson Corp. Дата публикации: 2000-06-20.

Integrated Circuit Dies Having Alignment Marks and Methods of Forming Same

Номер патента: US20170084544A1. Автор: Chen Hsien-Wei. Владелец: . Дата публикации: 2017-03-23.

Integrated circuit packages with cavities and methods of manufacturing the same

Номер патента: US20220157678A1. Автор: Jesus Bajo Bautista, JR.,Jeffrey Dorado Emperador,Francis Masiglat de Vera. Владелец: Texas Instruments Inc. Дата публикации: 2022-05-19.

Semiconductor device package and method of fabricating the same

Номер патента: US20220148948A1. Автор: Younghwan Park,Sunkyu Hwang,Jongseob Kim,Jaejoon Oh,Soogine Chong. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-05-12.

Integrated circuit, semiconductor bare chip arrangement and method for producing an integrated circuit

Номер патента: DE102013112636B4. Автор: Joachim Mahler,Khalil Hosseini,Georg Meyer-Berg. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2020-06-10.

MICROELECTRONIC ASSEMBLIES WITH INTEGRATED CIRCUITS AND INTERPOSERS WITH CAVITIES, AND METHODS OF MANUFACTURE

Номер патента: US20160133600A1. Автор: Shen Hong,Woychik Charles G.,SITARAM Arkalgud R.. Владелец: . Дата публикации: 2016-05-12.

INTEGRATED CIRCUIT (IC) PACKAGES WITH SHIELDS AND METHODS OF PRODUCING THE SAME

Номер патента: US20190287918A1. Автор: Poddar Anindya,KIM Woochan,Arora Vivek Kishorechand. Владелец: . Дата публикации: 2019-09-19.

Substrate structure, semiconductor package device, and manufacturing method of semiconductor package

Номер патента: US09723717B2. Автор: Hwee-Seng Jimmy Chew,Shoa-Siong Raymond Lim. Владелец: ADVANPACK SOLUTIONS PTE LTD. Дата публикации: 2017-08-01.

Semiconductor device package and method of fabricating the same

Номер патента: EP4002448A1. Автор: Younghwan Park,Sunkyu Hwang,Jongseob Kim,Jaejoon Oh,Soogine Chong. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-05-25.

Integrated Circuit Packages and Methods of Forming Same

Номер патента: US20190006354A1. Автор: Ming-Che Ho,Yi-Wen WU,Hung-Jui Kuo. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2019-01-03.

Redistribution layers in semiconductor packages and methods of forming same

Номер патента: US09741690B1. Автор: Chen-Hua Yu,Hsien-Wei Chen,Wei-Cheng Wu,Der-Chyang Yeh,Li-Han Hsu,Chi-Hsi Wu,Cheng-Hsien Hsieh. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-08-22.

Integrated circuit packaging system with shielding and method of manufacturing thereof

Номер патента: US09997468B2. Автор: Il Kwon Shim,Yaojian Lin,Sungsoo Kim,DeokKyung Yang,SungWon Cho,In Sang Yoon,Byung Joon Han,Hun Teak Lee,KyoWang Koo,KyoungHee Park,SeungYong Chai. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2018-06-12.

Method of Forming an Integrated Circuit Package Including a Direct Connect Pad, A Blind Via, and a Bond Pad Electrically Coupled to the Direct Connect Pad

Номер патента: US20130295722A1. Автор: Peter R. Harper,Kenneth Robert Rhyner. Владелец: Texas Instruments Inc. Дата публикации: 2013-11-07.

Semiconductor package and method of forming same

Номер патента: US11817380B2. Автор: Chen-Hua Yu,Chung-Shi Liu,Jiun Yi Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-14.

Semiconductor Package and Method of Forming Same

Номер патента: US20240021511A1. Автор: Chen-Hua Yu,Chung-Shi Liu,Jiun Yi Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-01-18.

Integrated Circuit Package and Method

Номер патента: US20210020584A1. Автор: Chen-Hua Yu,Ming-Che Ho,Hung-Jui Kuo,Tzu Yun Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-01-21.

Integrated Circuit Packages and Methods of Forming the Same

Номер патента: US20240071950A1. Автор: Chien-Li Kuo,Wen-Yi Lin,Kuo-Chio Liu,Chien-Chen Li,Kuang-Chun Lee. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-02-29.

Test key strcutures, integrated circuit packages and methods of forming the same

Номер патента: US09991207B2. Автор: Hsien-Wei Chen,Li-Hsien HUANG,Shao-Yun Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-06-05.

Semiconductor packaging and methods of forming same

Номер патента: US20240379618A1. Автор: Ming-Fa Chen,Hsien-Wei Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-11-14.

Integrated circuit packaging system with unplated leadframe and method of manufacture thereof

Номер патента: US09620480B1. Автор: Byung Tai Do,Linda Pei Ee CHUA,Arnel Senosa Trasporto,Garret Dimaculangan. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2017-04-11.

Embedded silicon-based device components in a thick core substrate of an integrated circuit package

Номер патента: US20240222213A1. Автор: Ronilo Boja,Padam Jain. Владелец: Nvidia Corp. Дата публикации: 2024-07-04.

INTEGRATED CIRCUIT SYSTEM WITH DEBONDING ADHESIVE AND METHOD OF MANUFACTURE THEREOF

Номер патента: US20150311180A1. Автор: Choi Won Kyoung,Marimuthu Pandi Chelvam. Владелец: . Дата публикации: 2015-10-29.

Integrated circuit structure including schottky diode and method for manufacturing the same

Номер патента: US8183103B2. Автор: Yan-Hsiu Liu. Владелец: United Microelectronics Corp. Дата публикации: 2012-05-22.

Integrated circuit package and method of forming the same

Номер патента: US09455241B2. Автор: Kiyoshi Kuwabara,Yonggang Jin,Xavier Baraton. Владелец: STMICROELECTRONICS PTE LTD. Дата публикации: 2016-09-27.

Photonic integrated circuit packages and methods of manufacturing the same

Номер патента: US20240321657A1. Автор: Robert May,Srinivas PIETAMBARAM,Darko Grujicic,Rengarajan SHANMUGAM,Suddhasattwa NAD,Rahul Manepalli,Marcel WALL,Sashi KANDANUR. Владелец: Intel Corp. Дата публикации: 2024-09-26.

Photonic integrated circuit packages and methods of manufacturing the same

Номер патента: WO2024205678A1. Автор: Robert May,Srinivas PIETAMBARAM,Darko Grujicic,Rengarajan SHANMUGAM,Suddhasattwa NAD,Rahul Manepalli,Marcel WALL,Sashi KANDANUR. Владелец: Intel Corporation. Дата публикации: 2024-10-03.

Integrated circuit packaging system with chip stacking and method of manufacture thereof

Номер патента: US09530753B2. Автор: Daesik Choi,YoungJoon Kim,DaeSup Kim. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2016-12-27.

Integrated circuit constructions having through substrate vias and methods of forming integrated circuit constructions having through substrate vias

Номер патента: EP2801111A1. Автор: Yangyang Sun,Brandon P. Wirz,Jaspreet S. Gandhi,Josh D. Woodland. Владелец: Micron Technology Inc. Дата публикации: 2014-11-12.

Integrated circuit packaging system with conductive pillars and molded cavities and method of manufacture thereof

Номер патента: US20130241053A1. Автор: Daesik Choi,KyungHoon Lee,Sooyoung Lee. Владелец: Individual. Дата публикации: 2013-09-19.

Integrated Circuit Constructions Having Through Substrate Vias And Methods Of Forming Integrated Circuit Constructions Having Through Substrate Vias

Номер патента: US20130175698A1. Автор: Yangyang Sun,Brandon P. Wirz,Jaspreet S. Gandhi,Josh D. Woodland. Владелец: Individual. Дата публикации: 2013-07-11.

Integrated fan-out package and method of fabricating the same

Номер патента: US09870997B2. Автор: Hao-Yi Tsai,Chih-Hao Chang,Tin-Hao Kuo,Chien-Ling Hwang,Hsin-Hung Liao,Tsung-Hsien Chiang,Wei-Sen Chang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-01-16.

Integrated Circuit Package and Method

Номер патента: US20200243429A1. Автор: Chen-Hua Yu,Chung-Shi Liu,Hao-Yi Tsai,Tin-Hao Kuo,Chi-Hui Lai,Shu-Rong Chun,Kuo Lung Pan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-07-30.

Integrated Circuit Package and Method

Номер патента: US20230053190A1. Автор: Chen-Hua Yu,Chung-Shi Liu,Hao-Yi Tsai,Tin-Hao Kuo,Chi-Hui Lai,Shu-Rong Chun,Kuo Lung Pan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-02-16.

Integrated Circuit Package and Method

Номер патента: US20210233835A1. Автор: Chen-Hua Yu,Chung-Shi Liu,Hao-Yi Tsai,Tin-Hao Kuo,Chi-Hui Lai,Shu-Rong Chun,Kuo Lung Pan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-07-29.

Integrated circuit packaging system with ultra-thin chip and method of manufacture thereof

Номер патента: US8716108B2. Автор: Hun Teak Lee,DaeWook Yang,Yeongbeom Ko. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2014-05-06.

Integrated circuit packaging system with ultra-thin chip and method of manufacture thereof

Номер патента: US20130249117A1. Автор: Hun Teak Lee,DaeWook Yang,Yeongbeom Ko. Владелец: Individual. Дата публикации: 2013-09-26.

Packaged Semiconductor Device Including Liquid-Cooled Lid and Methods of Forming the Same

Номер патента: US20220310482A1. Автор: Chih-Hang Tung,Chung-Jung Wu,Tung-Liang Shao,Sheng-Tsung HSIAO,Jen Yu Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-09-29.

Integrated circuit packaging system with transferable trace lead frame

Номер патента: US20140167236A1. Автор: Byung Tai Do,Linda Pei Ee CHUA,Arnel Senosa Trasporto. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2014-06-19.

Packaged Semiconductor Device Including Liquid-Cooled Lid and Methods of Forming the Same

Номер патента: US20240249999A1. Автор: Chih-Hang Tung,Chung-Jung Wu,Tung-Liang Shao,Sheng-Tsung HSIAO,Jen Yu Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-25.

Method of designing semiconductor integrated circuit, designing apparatus, semiconductor integrated circuit system, semiconductor integrated circuit mounting substrate, package and semiconductor integrated circuit

Номер патента: US20110012260A1. Автор: Hiroyuki Tanaka,Hiroaki Suzuki,Yuichi Nishimura,Nobufusa Iwanishi,Kazuhiko Fujimoto,Mitsumi Ito,Shinya Tokunaga,Koichi Seko. Владелец: Panasonic Corp. Дата публикации: 2011-01-20.

Semiconductor chip, semiconductor integrated circuit device using the same, and method of selecting semiconductor chip

Номер патента: KR100724653B1. Автор: 가이무쯔아끼. Владелец: 후지쯔 가부시끼가이샤. Дата публикации: 2007-06-04.

Package and method of forming same

Номер патента: US20230266528A1. Автор: Chen-Hua Yu,Chung-Shi Liu,Hao-Yi Tsai,Hung-Yi Kuo,Cheng-chieh Hsieh,Chih-Hsuan Tai,Chung-Ming Weng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-08-24.

Integrated circuit packaging system with leadframe and method of manufacture thereof

Номер патента: US20110233743A1. Автор: Erwin Aguas Sangalang,Ramona Damalerio,Jayby Agno,Dexter Anonuevo. Владелец: Individual. Дата публикации: 2011-09-29.

Integrated circuit devices including stacked elements and methods of forming the same

Номер патента: EP4235783A2. Автор: Byounghak Hong,Kangill Seo,Seungchan Yun,Gilhwan Son,Saehan Park,Jeonghyuk Yim,Inchan HWANG,Seungyoung Lee,Janggeun LEE,MyungHoon JUNG,Buhyun Ham. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-08-30.

Leadless integrated circuit packaging system and method of manufacture thereof

Номер патента: US8709873B2. Автор: Zigmund Ramirez Camacho. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2014-04-29.

Leadless integrated circuit packaging system and method of manufacture thereof

Номер патента: US20100140765A1. Автор: Zigmund Ramirez Camacho. Владелец: Individual. Дата публикации: 2010-06-10.

Leadless integrated circuit packaging system and method of manufacture thereof

Номер патента: US20110285001A1. Автор: Zigmund Ramirez Camacho. Владелец: Individual. Дата публикации: 2011-11-24.

High density integrated circuit package structure and integrated circuit

Номер патента: US09768101B2. Автор: Dazhong LIANG. Владелец: CHINA CHIPPACKING TECHNOLOGY Co Ltd. Дата публикации: 2017-09-19.

High voltage integrated circuit package with core

Номер патента: US20240355797A1. Автор: William P. Taylor,Vijay Mangtani,Andrew Thompson,Joseph Duigan,Andrew Bernard Keogh,Maurizio Salato. Владелец: Allegro Microsystems Inc. Дата публикации: 2024-10-24.

Integrated circuit packaging system with routable trace and method of manufacture thereof

Номер патента: US09576873B2. Автор: Byung Tai Do,Linda Pei Ee CHUA,Arnel Senosa Trasporto. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2017-02-21.

Method of forming a glass interposer with thermal vias

Номер патента: US09585257B2. Автор: David J. Russell,Jeffrey P. Gambino,Richard S. Graf,Sudeep Mandal. Владелец: Globalfoundries Inc. Дата публикации: 2017-02-28.

Leadframe in packages of integrated circuits

Номер патента: US20200235044A1. Автор: Hyoung Il Kim. Владелец: Intel Corp. Дата публикации: 2020-07-23.

Method of forming a surface-mount integrated circuit package with solder enhanced leadframe terminals

Номер патента: WO2022231652A1. Автор: Ekgachai Kenganantanon,Rangsun Kitnarong,Pattarapon POOLSUP,Chanyuth Junjuewong,Wichai Kovitsophon,Watcharapong Nokde. Владелец: MICROCHIP TECHNOLOGY INCORPORATED. Дата публикации: 2022-11-03.

Integrated circuit package and method of forming same

Номер патента: US20200058592A1. Автор: Mark R. Boone,Chunho Kim,Randolph E. Crutchfield. Владелец: MEDTRONIC INC. Дата публикации: 2020-02-20.

Integrated circuit package and method of forming same

Номер патента: US20210272909A1. Автор: Mark R. Boone,Chunho Kim,Randolph E. Crutchfield. Владелец: MEDTRONIC INC. Дата публикации: 2021-09-02.

Integrated circuits with aluminum via structures and methods for fabricating the same

Номер патента: US09917027B2. Автор: Juan Boon Tan,Mahesh BHATKAR,Wanbing YI,Chin Chuan Neo. Владелец: GLOBALFOUNDRIES SINGAPORE PTE LTD. Дата публикации: 2018-03-13.

Integrated circuit devices including stacked elements and methods of forming the same

Номер патента: US20230275021A1. Автор: Kang-ill Seo,Byounghak Hong,Seungchan Yun,Gilhwan Son,Saehan Park,Jeonghyuk Yim,Inchan HWANG,Seungyoung Lee,Janggeun LEE,MyungHoon JUNG,Buhyun Ham. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-08-31.

Integrated circuit devices including stacked elements and methods of forming the same

Номер патента: EP4235783A3. Автор: Byounghak Hong,Kangill Seo,Seungchan Yun,Gilhwan Son,Saehan Park,Jeonghyuk Yim,Inchan HWANG,Seungyoung Lee,Janggeun LEE,MyungHoon JUNG,Buhyun Ham. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-01-03.

INTEGRATED CIRCUIT PACKAGES WITH CAVITIES AND METHODS OF MANUFACTURING THE SAME

Номер патента: US20190206752A1. Автор: Bautista,JR. Jesus Bajo,Emperador Jeffrey Dorado,de Vera Francis Masiglat. Владелец: . Дата публикации: 2019-07-04.

Manufacturing method of single chip semiconductor integrated circuit device, program debug method and manufacturing method of micro controller

Номер патента: TW200807626A. Автор: Koji Yano,Tomoki Segawa. Владелец: Mitsumi Electric Co Ltd. Дата публикации: 2008-02-01.

Flex Prevention Mechanical Structure Such as a Ring for Large Integrated Circuit Modules and Packages and Methods of Manufacture Using Same

Номер патента: US20210217690A1. Автор: Takken Todd Edward,Tian Shurong. Владелец: . Дата публикации: 2021-07-15.

Flex prevention mechanical structure such as a ring for large integrated circuit modules and packages and methods of manufacture using same

Номер патента: US11631635B2. Автор: Shurong Tian,Todd Edward Takken. Владелец: International Business Machines Corp. Дата публикации: 2023-04-18.

INTEGRATED CIRCUIT STRUCTURE WITH METAL CAP AND METHODS OF FABRICATION

Номер патента: US20150115459A1. Автор: Wang Ping-Chuan,Sullivan Timothy D.,Zhang Lijuan,Chen Fen,LU MINHUA,Kim Andrew T.. Владелец: International Business Machines Corporat. Дата публикации: 2015-04-30.

INTEGRATED CIRCUIT WITH ELECTRICAL THROUGH-CONTACT AND METHOD FOR PRODUCING ELECTRICAL THROUGH-CONTACT

Номер патента: US20140084428A1. Автор: Wirth Stefan,Hedler Harry,Schieber Markus,Zapf Jörg. Владелец: SIEMENS AKTIENGESELLSCHAFT. Дата публикации: 2014-03-27.

INTEGRATED CIRCUITS WITH CLOSE ELECTRICAL CONTACTS AND METHODS FOR FABRICATING THE SAME

Номер патента: US20150137385A1. Автор: Frohberg Kai,MOLL Peter,SCHOLZ Heike. Владелец: GLOBALFOUNDRIES, Inc.. Дата публикации: 2015-05-21.

Integrated circuit device having reduced bow and method for making same

Номер патента: US20060141673A1. Автор: William Tandy,Cary Baerlocher,Matt Schwab. Владелец: Micron Technology Inc. Дата публикации: 2006-06-29.

Vertical nonvolatile memory device, semiconductor package, and heat dissipation method of memory device

Номер патента: CN114823706A. Автор: 金钟三,边宰范,朴世桓. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-07-29.

Integrated circuit devices having air-gap spacers above gate electrodes

Номер патента: US09911851B2. Автор: Kang-ill Seo,Jin-Wook Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-03-06.

Integrated circuit packages and methods of forming the same

Номер патента: US20240266316A1. Автор: Ching-Hua Hsieh,Hsiu-Jen Lin,Wei-Yu Chen,Hao-Jan Pei,Hsin Liang Chen,Chao-Wei Chiu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-08.

Integrated circuit module and method of forming same

Номер патента: US20180122778A1. Автор: Douglas F. Link,Susan Marie JOHANSSON,Sayed Kaysarbin Rahim. Владелец: Starkey Laboratories Inc. Дата публикации: 2018-05-03.

THREE-DIMENSIONAL INTEGRATED CIRCUIT STRUCTURES PROVIDING THERMOELECTRIC COOLING AND METHODS FOR COOLING SUCH INTEGRATED CIRCUIT STRUCTURES

Номер патента: US20150179543A1. Автор: Liu Wei,TAN Juan Boon,TEE Kheng Chok,Chew Kam Chew. Владелец: GLOBALFOUNDRIES Singapore Pte. Ltd.. Дата публикации: 2015-06-25.

Systems and Methods for Mechanical and Electrical Package Substrate Issue Mitigation

Номер патента: US20160086823A1. Автор: Eran Rotem. Владелец: Marvell International Ltd. Дата публикации: 2016-03-24.

Systems and methods for mechanical and electrical package substrate issue mitigation

Номер патента: US09761465B2. Автор: Eran Rotem. Владелец: Marvell Israel MISL Ltd. Дата публикации: 2017-09-12.

Methods for processing integrated circuit packages formed using electroplating and apparatus made therefrom

Номер патента: US20060014370A1. Автор: Charles Cohn,Musawir Chowdhury. Владелец: Individual. Дата публикации: 2006-01-19.

Methods for processing integrated circuit packages formed using electroplating and apparatus made therefrom

Номер патента: US7157361B2. Автор: Charles Cohn,Musawir M. Chowdhury. Владелец: Agere Systems LLC. Дата публикации: 2007-01-02.

THIN INTEGRATED CIRCUIT CHIP-ON-BOARD ASSEMBLY AND METHOD OF MAKING

Номер патента: US20140035129A1. Автор: Stuber Michael A.,Molin Stuart B.,Drucker Mark,Fowler Peter. Владелец: IO SEMICONDUCTOR, INC.. Дата публикации: 2014-02-06.

Leadframe Semiconductor Integrated Circuit Device Using the Same and Method of and Process for Fabricating the Two

Номер патента: KR100552353B1. Автор: 가지하라유지로,스즈끼가즈나리,쯔보사끼구니히로,스즈끼히로미찌,미야끼요시노리,나이또다까히로,가와이스에오. Владелец: 가부시키가이샤 히타치초엘에스아이시스템즈. Дата публикации: 2006-06-20.

INTEGRATED CIRCUIT HOUSING, MEANS FOR ASSEMBLY AND METHOD OF MANUFACTURE

Номер патента: FR2498814A1. Автор: Christian Meigne,Alain Keryuel. Владелец: Burroughs Corp. Дата публикации: 1982-07-30.

Packaged integrated circuit having large solder pads and method for forming

Номер патента: US20140117554A1. Автор: Brett P. Wilkerson,Trent S. Uehling. Владелец: Individual. Дата публикации: 2014-05-01.

For improving the integrated antenna package and its reflow method of weld strength

Номер патента: CN109166827B. Автор: 李义政. Владелец: Zhongshan Yiyijia Electronics Co Ltd. Дата публикации: 2019-08-20.

Semiconductor packages and the manufacture method of packaging pedestal for semiconductor

Номер патента: CN103579169B. Автор: 许文松,张垂弘,于达人,林子闳. Владелец: MediaTek Inc. Дата публикации: 2016-08-10.

Integrated circuit packaging systemwith leadframe and method ofmanufacture thereof

Номер патента: SG177074A1. Автор: YAO FENG,Qiang Shen Guo,Hak Yee Jae. Владелец: Stats Chippac Ltd. Дата публикации: 2012-01-30.

Integrated circuit protection and ruggedization coatings and methods

Номер патента: US8076185B1. Автор: Nathan P. Lower,Alan P. Boone,Ross K. Wilcoxon. Владелец: ROCKWELL COLLINS INC. Дата публикации: 2011-12-13.

Optoelectronic device, metal mold for manufacturing the device and manufacturing method of the device using the metal mold

Номер патента: US5285076A. Автор: Kazuo Kusuda,Katsunori Makiya. Владелец: Sharp Corp. Дата публикации: 1994-02-08.

Enhanced ESD protection of integrated circuit in 3DIC package

Номер патента: US09412708B2. Автор: Shyh-An Chi. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-08-09.

Methods of packaging an integrated circuit and methods of forming an integrated circuit package

Номер патента: USRE42457E1. Автор: Dexin Liang,Lily Zhao. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2011-06-14.

Integrated circuit package substrate with microstrip architecture and electrically grounded surface conductive layer

Номер патента: US09972589B1. Автор: Eng Huat Goh,Min Suet LIM,Jiun Hann Sir,Hoay Tien Teoh,Seok Ling Lim. Владелец: Intel Corp. Дата публикации: 2018-05-15.

Assemblies used for embedding integrated circuit assemblies, and their uses and method of fabrication thereof

Номер патента: EP4315414A2. Автор: Jayna Sheats. Владелец: Terecircuits Corp. Дата публикации: 2024-02-07.

Assemblies used for embedding integrated circuit assemblies, and their uses and method of fabrication thereof

Номер патента: WO2022212492A3. Автор: Jayna Sheats. Владелец: Terecircuits Corporation. Дата публикации: 2022-11-10.

Semiconductor package and manufacturing method thereof

Номер патента: US20240038616A1. Автор: Chih-Wei Wu,Wen-Chih Chiou,Ying-Ching Shih,Cheng-Chieh Li. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-02-01.

Integrated circuit having improved electromigration performance and method of forming same

Номер патента: US09679810B1. Автор: Oleg Gluschenkov,Michael P. Chudzik,Joyeeta Nag,Andrew H. Simon,Siddarth A. Krishnan,Shishir K. Ray. Владелец: Globalfoundries Inc. Дата публикации: 2017-06-13.

Integrated circuit having improved electromigration performance and method of forming same

Номер патента: US20170236780A1. Автор: Oleg Gluschenkov,Michael P. Chudzik,Joyeeta Nag,Andrew H. Simon,Siddarth A. Krishnan,Shishir K. Ray. Владелец: Globalfoundries Inc. Дата публикации: 2017-08-17.

Integrated circuit structure with crack stop and method of forming same

Номер патента: US09589912B1. Автор: Stephen E. Greco,Atsushi Ogino,Roger A. Quon,Jim S. Liang. Владелец: Globalfoundries Inc. Дата публикации: 2017-03-07.

Integrated circuits with an insultating layer and methods for producing such integrated circuits

Номер патента: US09443723B2. Автор: Christof Streck,Ronny Pfutzner,Andreia Ioana Popa. Владелец: Globalfoundries Inc. Дата публикации: 2016-09-13.

Integrated circuit packaging system with a grid array with a leadframe and method of manufacture thereof

Номер патента: US09799589B2. Автор: Byung Tai Do,Linda Pei Ee CHUA,Arnel Senosa Trasporto. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2017-10-24.

Integrated circuit devices including a via and methods of forming the same

Номер патента: US11978668B2. Автор: Harsono Simka,Ming He,Sang Hoon AHN,Seowoo Nam,Anthony Dongick LEE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-05-07.

Integrated circuit devices including a via and methods of forming the same

Номер патента: US20230352399A1. Автор: Kang-ill Seo,Jaemyung CHOI,Janggeun LEE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-11-02.

Integrated circuit devices including a via and methods of forming the same

Номер патента: EP4270474A1. Автор: Kang-ill Seo,Jaemyung CHOI,Janggeun LEE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-11-01.

Integrated Circuit Package and Methods of Forming the Same

Номер патента: US20240304535A1. Автор: Chen-Shien Chen,Yu-Chia Lai,Hui-Chun Chiang,Ting Hao Kuo. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-12.

Integrated circuit structure having deep trench capacitor and through-silicon via and method of forming same

Номер патента: US09966310B1. Автор: Anthony K. Stamper,John A. Fitzsimmons,Mukta G. Farooq. Владелец: Globalfoundries Inc. Дата публикации: 2018-05-08.

3DIC interconnect devices and methods of forming same

Номер патента: US09543257B2. Автор: Dun-Nian Yaung,Jeng-Shyan Lin,Shu-Ting Tsai. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-01-10.

Integrated circuit structure having deep trench capacitor and through-silicon via and method of forming same

Номер патента: US09892970B2. Автор: Anthony K. Stamper,John A. Fitzsimmons,Mukta G. Farooq. Владелец: Globalfoundries Inc. Дата публикации: 2018-02-13.

Integrated circuit package structure with conductive stair structure and method of manufacturing thereof

Номер патента: US20230268258A1. Автор: Chien-Chung Wang,Hsih-Yang Chiu. Владелец: Nanya Technology Corp. Дата публикации: 2023-08-24.

Integrated circuit package structure with conductive stair structure and method of manufacturing thereof

Номер патента: US11984389B2. Автор: Chien-Chung Wang,Hsih-Yang Chiu. Владелец: Nanya Technology Corp. Дата публикации: 2024-05-14.

Integrated circuit package structure with conductive stair structure and method of manufacturing thereof

Номер патента: US20220375837A1. Автор: Chien-Chung Wang,Hsih-Yang Chiu. Владелец: Nanya Technology Corp. Дата публикации: 2022-11-24.

Integrated circuits with an insultating layer and methods for producing such integrated circuits

Номер патента: US20160013050A1. Автор: Christof Streck,Ronny Pfutzner,Andreia Ioana Popa. Владелец: Globalfoundries Inc. Дата публикации: 2016-01-14.

Integrated circuit packaging system with support structure and method of manufacture thereof

Номер патента: US09768102B2. Автор: Koo Hong Lee,Sung Soo Kim,Dong Ju Jeon. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2017-09-19.

Integrated circuit packaging system with embedded pad on layered substrate and method of manufacture thereof

Номер патента: US09607938B2. Автор: Dong Ju Jeon,KyoungHee Park,MinKyung Kang,YoungDal Roh. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2017-03-28.

System and method for venting pressure from an integrated circuit package sealed with a lid

Номер патента: EP1465249A3. Автор: Anthony M Chiu,Tom Q Lao. Владелец: STMicroelectronics lnc USA. Дата публикации: 2004-10-20.

System and method for venting pressure from an integrated circuit package sealed with a lid

Номер патента: US20040195685A1. Автор: Anthony Chiu,Tom Lao. Владелец: STMicroelectronics lnc USA. Дата публикации: 2004-10-07.

IC structure with recessed solder bump area and methods of forming same

Номер патента: US09472490B1. Автор: Timothy D. Sullivan,Timothy M. Sullivan,Stephen P. Ayotte,Glen E. Richard. Владелец: Globalfoundries Inc. Дата публикации: 2016-10-18.

Integrated circuit packages and methods

Номер патента: US20240112924A1. Автор: Chen-Shien Chen,Yu-Chih Huang,Hsu-Hsien Chen,Chi-Yen Lin,Ting Hao Kuo. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-04-04.

Integrated circuits including a MIMCAP device and methods of forming the same for long and controllable reliability lifetime

Номер патента: US09583557B2. Автор: Lili Cheng,Robert Fox,Jeasung Park,Dina H. Triyoso,David Paul Brunco,Sanford Chu. Владелец: Globalfoundries Inc. Дата публикации: 2017-02-28.

Integrated circuit structures comprising conductive vias and methods of forming conductive vias

Номер патента: US09704802B2. Автор: Zengtao T. Liu. Владелец: Micron Technology Inc. Дата публикации: 2017-07-11.

Integrated circuit with modified metal features and method of fabrication therefor

Номер патента: US20040185652A1. Автор: Philip Ireland. Владелец: Micron Technology Inc. Дата публикации: 2004-09-23.

Integrated circuits with self aligned contacts and methods of manufacturing the same

Номер патента: US09576852B2. Автор: Theodorus Standaert,Jim Kelly,Ming He,Yann Mignot,Seowoo Nam,Raghuveer Patlotta. Владелец: STMicroelectronics lnc USA. Дата публикации: 2017-02-21.

Integrated circuit device featuring an antifuse and method of making same

Номер патента: US09502424B2. Автор: Xia Li,John Jianhong ZHU,Zhongze Wang. Владелец: Qualcomm Inc. Дата публикации: 2016-11-22.

Integrated circuits having heterogeneous devices therein and methods of designing the same

Номер патента: US20230290779A1. Автор: Jungho DO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-09-14.

Integrated circuit structures comprising conductive vias and methods of forming conductive vias

Номер патента: US10559531B2. Автор: Zengtao T. Liu. Владелец: Micron Technology Inc. Дата публикации: 2020-02-11.

Three-dimensional (3D) memory cell separation among 3D integrated circuit (IC) tiers, and related 3D integrated circuits (3DICs), 3DIC processor cores, and methods

Номер патента: US09583179B2. Автор: Yang Du,Jing Xie. Владелец: Qualcomm Inc. Дата публикации: 2017-02-28.

Integrated circuit device including air gaps and method of manufacturing the same

Номер патента: US11862514B2. Автор: Woojin Lee,Sanghoon Ahn,Kyuhee Han. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-01-02.

Semiconductor package and manufacturing method thereof

Номер патента: US20240055315A1. Автор: Chih-Wei Wu,Wen-Chih Chiou,Ying-Ching Shih,An-Jhih Su. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-02-15.

STACKED PACKAGE AND A MANUFACTURING METHOD OF THE SAME

Номер патента: US20190214367A1. Автор: CHEN Ming-Chih,HSU Hung-Hsin,Wang Chi-An,Fang Li-Chih,Lan Yuan-Fu,Hsu Hsien-Wen. Владелец: POWERTECH TECHNOLOGY INC.. Дата публикации: 2019-07-11.

Electronic assembly and method of forming same

Номер патента: WO2020076780A1. Автор: Yongqian Wang,Mark E. Henschel,Shawn Shi,Chunho Kim. Владелец: Medtronic, Inc.. Дата публикации: 2020-04-16.

Integrated circuit packaging system withmolded interconnects and method ofmanufacture thereof

Номер патента: SG177075A1. Автор: Tai Do Byung,Senosa Trasporto Arnel,Pei Ee Chua Linda. Владелец: Stats Chippac Ltd. Дата публикации: 2012-01-30.

Integrated circuit packaging system with a lead and method of manufacture thereof

Номер патента: US20120326285A1. Автор: Zigmund Ramirez Camacho,Henry Descalzo Bathan,Emmanuel Espiritu,Elizar Andres. Владелец: Individual. Дата публикации: 2012-12-27.

Semiconductor device package and method of manufacture

Номер патента: EP2680307A3. Автор: Stephen R. Hooper,Dwight L. Daniels,Alan J. Magnus,Justin E. Poarch. Владелец: FREESCALE SEMICONDUCTOR INC. Дата публикации: 2014-12-17.

Integrated circuit packaging system with interlock and method of manufacture thereof

Номер патента: US20120074548A1. Автор: Zigmund Ramirez Camacho,Henry Descalzo Bathan,Emmanuel Espiritu. Владелец: Individual. Дата публикации: 2012-03-29.

Method for producing an integrated circuit package and apparatus produced thereby

Номер патента: US09853007B2. Автор: John Plasterer. Владелец: Microsemi Solutions US Inc. Дата публикации: 2017-12-26.

Integrated circuit packaging system with pad connection and method of manufacture thereof

Номер патента: US20120280376A1. Автор: Byung Tai Do,Linda Pei Ee CHUA,Arnel Senosa Trasporto. Владелец: Individual. Дата публикации: 2012-11-08.

Voltage-isolated integrated circuit packages

Номер патента: US20240347472A1. Автор: William P. Taylor,Vijay Mangtani,Paul A. David. Владелец: Allegro Microsystems Inc. Дата публикации: 2024-10-17.

Apparatuses and methods for coupling a waveguide structure to an integrated circuit package

Номер патента: EP3739684A1. Автор: Antonius Johannes Matheus De Graauw,Hendrikus Jozef Kamphuis,Sander Jacobus Geluk. Владелец: NXP BV. Дата публикации: 2020-11-18.

Voltage-isolated integrated circuit packages with back-side transformers

Номер патента: US20240347473A1. Автор: William P. Taylor. Владелец: Allegro Microsystems Inc. Дата публикации: 2024-10-17.

Multiple ball grid array (bga) configurations for a single integrated circuit (ic) package

Номер патента: US20210066178A1. Автор: Dinesh Somasekhar,Md Altaf Hossain,Dheeraj Subbareddy,Ankireddy Nalamalpu. Владелец: Intel Corp. Дата публикации: 2021-03-04.

Semiconductor device package and method of manufacture

Номер патента: US20150228560A1. Автор: Stephen R. Hooper,Dwight L. Daniels,Alan J. Magnus,Justin E. Poarch. Владелец: FREESCALE SEMICONDUCTOR INC. Дата публикации: 2015-08-13.

Semiconductor device package and method of manufacture

Номер патента: US09455216B2. Автор: Stephen R. Hooper,Dwight L. Daniels,Alan J. Magnus,Justin E. Poarch. Владелец: FREESCALE SEMICONDUCTOR INC. Дата публикации: 2016-09-27.

Semiconductor device package and method of manufacture

Номер патента: US20140338956A1. Автор: Stephen R. Hooper,Dwight L. Daniels,Alan J. Magnus,Justin E. Poarch. Владелец: FREESCALE SEMICONDUCTOR INC. Дата публикации: 2014-11-20.

Substrate structure for an integrated circuit package and method for manufacturing the same

Номер патента: US20050012207A1. Автор: Jackson Hsieh,Jichen Wu. Владелец: Kingpak Technology Inc. Дата публикации: 2005-01-20.

Balanced leadframe package structure and method of manufacturing the same

Номер патента: US20130147024A1. Автор: Kim-yong Goh,Xueren Zhang,Wingshenq Wong. Владелец: STMICROELECTRONICS PTE LTD. Дата публикации: 2013-06-13.

Methods of forming image sensor integrated circuit packages

Номер патента: US09634059B2. Автор: Jui Yi Chiu. Владелец: Semiconductor Components Industries LLC. Дата публикации: 2017-04-25.

An integrated circuit package having interchip bonding and method therefor

Номер патента: WO1999045591A9. Автор: Steve V Drehobl,Joseph D Fernandez,Mike Charles. Владелец: Microchip Tech Inc. Дата публикации: 1999-11-11.

Integrated circuit including asymmetric power line and method of designing the same

Номер патента: US11755809B2. Автор: Sanghoon Baek,Jonghoon Jung,Jaewoo SEO,Jisu YU,Hyeongyu You. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-09-12.

Integrated circuits including magnetic core inductors and methods for fabricating the same

Номер патента: US09613897B2. Автор: Juan Boon Tan,Mahesh BHATKAR,Luke England,Wanbing YI,Lulu Peng. Владелец: GLOBALFOUNDRIES SINGAPORE PTE LTD. Дата публикации: 2017-04-04.

Integrated Circuits With Magnetic Core Inductors And Methods of Fabrications Thereof

Номер патента: US20130260483A1. Автор: Wolfgang Klein,Carsten Ahrens,Alexander Glas,Renate Hofmann. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2013-10-03.

Integrated circuits having shielded mems devices and methods for fabricating shielded mems devices

Номер патента: US20170313577A1. Автор: NAGARAJAN Ranganathan,Rakesh Kumar,Humberto CAMPANELLA PINEDA,Zouhair Sbiaa,Ramachandramurthy Pradeep Yelehanka. Владелец: GLOBALFOUNDRIES SINGAPORE PTE LTD. Дата публикации: 2017-11-02.

Integrated circuit device featuring an antifuse and method of making same

Номер патента: EP2867922A2. Автор: Xia Li,John Jianhong ZHU,Zhongze Wang. Владелец: Qualcomm Inc. Дата публикации: 2015-05-06.

Integrated circuits including integrated passive devices and methods of manufacture thereof

Номер патента: US20140159198A1. Автор: Xiaowei Ren,Wayne R. Burger. Владелец: Individual. Дата публикации: 2014-06-12.

Destructor integrated circuit chip, interposer electronic device and methods

Номер патента: US7880248B1. Автор: David E. Chubin,Cuong V. Pham,Colleen L. Khalifa. Владелец: Teledyne Technologies Inc. Дата публикации: 2011-02-01.

Integrated circuits protected against reverse engineering and method for fabricating the same using vias without metal terminations

Номер патента: US20020096777A1. Автор: William Clark,Lap-Wai Chow,James Baukus. Владелец: HRL LABORATORIES LLC. Дата публикации: 2002-07-25.

Stackable integrated circuit package and method therefor

Номер патента: EP1644976A2. Автор: Hem P. Takiar. Владелец: SanDisk Corp. Дата публикации: 2006-04-12.

Integrated circuit package and method of forming same

Номер патента: US11862605B2. Автор: Chen-Hua Yu,Ming-Fa Chen,Hsien-Wei Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-01-02.

Thermal conductivity for integrated circuit packaging

Номер патента: US20200323076A1. Автор: Brian J. Long. Владелец: Intel Corp. Дата публикации: 2020-10-08.

Integrated circuit package having an inductance loop formed from a multi-loop configuration

Номер патента: WO2005022597A3. Автор: Joonbae Park,Kyeongho Lee,Yido Koo,Jeong-Woo Lee,Kang Yoon Lee,Hyungki Huh. Владелец: Hyungki Huh. Дата публикации: 2005-08-04.

Integrated circuit package having an inductance loop formed from a multi-loop configuration

Номер патента: WO2005022597A2. Автор: Joonbae Park,Kyeongho Lee,Yido Koo,Jeong-Woo Lee,Kang Yoon Lee,Hyungki Huh. Владелец: GCT Semiconductor, Inc.. Дата публикации: 2005-03-10.

Integrated circuit package having an inductance loop formed from a multi-loop configuration

Номер патента: EP1665383A2. Автор: Joonbae Park,Kyeongho Lee,Yido Koo,Jeong-Woo Lee,Kang Yoon Lee,Hyungki Huh. Владелец: Gct Semiconductor Inc. Дата публикации: 2006-06-07.

Integrated circuit package having stacked integrated circuits and method therefor

Номер патента: WO2005001935A2. Автор: Soochok Kee. Владелец: SanDisk Corporation. Дата публикации: 2005-01-06.

Integrated circuit package having an inductance loop formed from a multi-loop configuration

Номер патента: US20050045986A1. Автор: Kang Lee,Joonbae Park,Kyeongho Lee,Yido Koo,Jeong-Woo Lee,Hyungki Huh. Владелец: Gct Semiconductor Inc. Дата публикации: 2005-03-03.

Bulk metallic glass solders, foamed bulk metallic glass solders, foamed- solder bond pads in chip packages, methods of assembling same and systems containing same

Номер патента: WO2007149737A2. Автор: Yongki Min,Daewoong Suh. Владелец: Intel Corporation. Дата публикации: 2007-12-27.

Stacked integrated circuit device including multiple substrates and method of manufacturing the same

Номер патента: US20050110159A1. Автор: Sung-Young Lee,Dong-gun Park,Jeong-Dong Choe,Chang-Woo Oh. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2005-05-26.

Vertically stacked integrated circuits device comprising multi-substrates and method of manufacturing the same

Номер патента: KR100574957B1. Автор: 박동건,이성영,오창우,최정동. Владелец: 삼성전자주식회사. Дата публикации: 2006-04-28.

Integrated circuits with aluminum via structures and methods for fabricating the same

Номер патента: US20170194229A1. Автор: Juan Boon Tan,Mahesh BHATKAR,Wanbing YI,Chin Chuan Neo. Владелец: GLOBALFOUNDRIES SINGAPORE PTE LTD. Дата публикации: 2017-07-06.

Integrated circuit package with sensor and method of making

Номер патента: US09688530B2. Автор: Makoto Shibuya,Noboru Nakanishi,Luu Nguyen. Владелец: Texas Instruments Inc. Дата публикации: 2017-06-27.

Semiconductor integrated circuit device having encapsulation film and method of fabricating the same

Номер патента: US20160190439A1. Автор: Se Ho LEE,Hae Chan PARK,Sang Chul Oh. Владелец: SK hynix Inc. Дата публикации: 2016-06-30.

Semiconductor integrated circuit device having encapsulation film and method of fabricating the same

Номер патента: US09502646B2. Автор: Se Ho LEE,Hae Chan PARK,Sang Chul Oh. Владелец: SK hynix Inc. Дата публикации: 2016-11-22.

Integrated circuit package and method

Номер патента: US12074143B2. Автор: Chen-Hua Yu,Chung-Shi Liu,Hao-Yi Tsai,Tin-Hao Kuo,Chi-Hui Lai. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-27.

Integrated circuit package and method

Номер патента: US20240363591A1. Автор: Chen-Hua Yu,Chung-Shi Liu,Hao-Yi Tsai,Tin-Hao Kuo,Chi-Hui Lai. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-31.

Integrated Circuit Having Stress Tuning Layer and Methods of Manufacturing Same

Номер патента: US20130140715A1. Автор: Shin-puu Jeng,Szu Wei Lu,Clinton Chao. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2013-06-06.

Semiconductor integrated circuit device with reservoir capacitors and method of manufacturing the same

Номер патента: US20170236825A1. Автор: Jong Su Kim,Dong Kun Lee. Владелец: SK hynix Inc. Дата публикации: 2017-08-17.

Integrated circuit package and method of forming same

Номер патента: US11810831B2. Автор: Chen-Hua Yu,Chih-Wei Wu,Ying-Ching Shih,Szu-Wei Lu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-07.

Integrated circuit package and method of making same

Номер патента: US09299661B2. Автор: Christopher James Kapusta,James Sabatini. Владелец: General Electric Co. Дата публикации: 2016-03-29.

Semiconductor device and method of forming same

Номер патента: US20240297053A1. Автор: Sih-Hao Liao,Hung-Jui Kuo,Yu-Hsiang Hu,Ting-Chen Tseng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-05.

INTEGRATED CIRCUIT ASSEMBLIES WITH REINFORCEMENT FRAMES, AND METHODS OF MANUFACTURE

Номер патента: US20160276294A1. Автор: Woychik Charles G.,Mirkarimi Laura Wills,Katkar Rajesh,Sitaram Arkalgud. Владелец: INVENSAS CORPORATION. Дата публикации: 2016-09-22.

Double-sided semiconductor package and dual-mold method of making same

Номер патента: US09893017B2. Автор: Il Kwon Shim,Yaojian Lin,Pandi C. Marimuthu. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2018-02-13.

Double-Sided Semiconductor Package and Dual-Mold Method of Making Same

Номер патента: US20180076142A1. Автор: Shim Il Kwon,Lin Yaojian,Marimuthu Pandi C.. Владелец: STATS ChipPAC Pte. Ltd.. Дата публикации: 2018-03-15.

Double-Sided Semiconductor Package and Dual-Mold Method of Making Same

Номер патента: US20160300797A1. Автор: Il Kwon Shim,Yaojian Lin,Pandi C. Marimuthu. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2016-10-13.

Semiconductor package device for use with multiple integrated circuits in a stacked configuration and method fo formation and testing

Номер патента: US20030085463A1. Автор: Mark Gerber,Shawn O'Connor,Trent Thompson. Владелец: Motorola Inc. Дата публикации: 2003-05-08.

Integrated circuits having dummy gate electrodes and methods of forming the same

Номер патента: US20140217512A1. Автор: Chan-Hong Chern,mei-hui Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2014-08-07.

Integrated circuits having dummy gate electrodes and methods of forming the same

Номер патента: US8928088B2. Автор: Chan-Hong Chern,mei-hui Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2015-01-06.

Integrated circuits having dummy gate electrodes and methods of forming the same

Номер патента: US9275994B2. Автор: Chan-Hong Chern,mei-hui Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-03-01.

Integrated circuit devices including discharging path and methods of forming the same

Номер патента: US12087669B1. Автор: Jaehong Lee,Kang-ill Seo,Sooyoung Park,Wonhyuk HONG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-09-10.

Integrated circuit, construction of integrated circuitry, and method of forming an array

Номер патента: EP3776645A1. Автор: Kevin R. Shea,Gurpreet Lugani,Alex Kogan,Kyle B. Campbell,Mario J. DI CINO,Aaron W. FREESE. Владелец: Micron Technology Inc. Дата публикации: 2021-02-17.

Integrated circuit, construction of integrated circuitry, and method of forming an array

Номер патента: WO2020023087A1. Автор: Kevin R. Shea,Gurpreet Lugani,Alex Kogan,Kyle B. Campbell,Mario J. DI CINO,Aaron W. FREESE. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2020-01-30.

Integrated Circuit, Construction Of Integrated Circuitry, And Method Of Forming An Array

Номер патента: US20200035498A1. Автор: Kevin R. Shea,Gurpreet Lugani,Alex Kogan,Kyle B. Campbell,Mario J. DI CINO,Aaron W. FREESE. Владелец: Micron Technology Inc. Дата публикации: 2020-01-30.

Integrated circuits with deep trench isolations and methods for producing the same

Номер патента: US09831304B1. Автор: Jeoung Mo KOO,Shiang Yang Ong,Raj Verma Purakh,Namchil MUN,Mun Tat Yap,Tat Wei Chua. Владелец: GLOBALFOUNDRIES SINGAPORE PTE LTD. Дата публикации: 2017-11-28.

Integrated circuits having FinFET semiconductor devices and methods of fabricating the same to resist sub-fin current leakage

Номер патента: US09472554B2. Автор: Yanxiang Liu,Michael Hargrove,Christian Gruensfelder. Владелец: Globalfoundries Inc. Дата публикации: 2016-10-18.

Integrated circuits with non-volatile memory and methods of producing the same

Номер патента: US09679905B1. Автор: Fan Zhang,Dong Wang,Danny Pak-Chum Shum,Huajun Liu,Juan Boon Tan,Laiqiang LUO,Yew Tuck Clament Chow. Владелец: GLOBALFOUNDRIES SINGAPORE PTE LTD. Дата публикации: 2017-06-13.

Integrated circuit having thinner gate dielectric and method of making

Номер патента: US09666483B2. Автор: Chih-Hung Lu,Ching-Chen Hao,Song-Bor Lee,Ching-Kun Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-05-30.

Integrated circuits having source/drain structure and method of making

Номер патента: US20200350432A1. Автор: Shih-Hsien Huang,Chien-Chang Su,Yi-Fang Pai. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-11-05.

Integrated circuits having source/drain structure and method of making

Номер патента: US20220285157A1. Автор: Shih-Hsien Huang,Chien-Chang Su,Yi-Fang Pai. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-09-08.

Integrated circuits with fets having nanowires and methods of manufacturing the same

Номер патента: US09425318B1. Автор: Jan Hoentschel,Stefan Flachowsky,Gerd Zschaetzsch. Владелец: Globalfoundries Inc. Дата публикации: 2016-08-23.

Semiconductor integrated circuit device with a surface and method of manufacturing the same

Номер патента: US09947546B2. Автор: Keun Kyu Kong,Min Seok Son,Jae Hee SIM,Jeong Hoon AN. Владелец: SK hynix Inc. Дата публикации: 2018-04-17.

Integrated circuits with dual silicide contacts and methods for fabricating same

Номер патента: US09660075B2. Автор: Guillaume Bouche,Andy C. Wei,Jeremy A. Wahl,Shao Ming Koh. Владелец: Globalfoundries Inc. Дата публикации: 2017-05-23.

Integrated circuits having improved gate structures and methods for fabricating same

Номер патента: US09490129B2. Автор: Huang Liu,Xiang Hu. Владелец: Globalfoundries Inc. Дата публикации: 2016-11-08.

Integrated circuit structure with semiconductor devices and method of fabricating the same

Номер патента: US20200098755A1. Автор: Yan-Hsiu Liu,Wei-Lun Hsu,Ji-Fu Kung,Yung-Chien Kung,Ming-Tsung Yeh,Am-Tay Luy,Yao-Pi Hsu. Владелец: United Microelectronics Corp. Дата публикации: 2020-03-26.

Integrated circuits with shallow trench isolations, and methods for producing the same

Номер патента: US09460955B2. Автор: Kun-Hsien LIN,Ran Yan,Alban Zaka,Nicolas Sassiat. Владелец: Globalfoundries Inc. Дата публикации: 2016-10-04.

MOSFET integrated circuit having doped conductive interconnects and methods for its manufacture

Номер патента: US8580665B2. Автор: Christian Witt. Владелец: Globalfoundries Inc. Дата публикации: 2013-11-12.

Integrated circuit comprising a jfet transistor and method for manufacturing such an integrated circuit

Номер патента: US20210151559A1. Автор: Jean JIMENEZ MARTINEZ. Владелец: STMicroelectronics Crolles 2 SAS. Дата публикации: 2021-05-20.

Mosfet integrated circuit having doped conductive interconnects and methods for its manufacture

Номер патента: US20130089980A1. Автор: Christian Witt. Владелец: Globalfoundries Inc. Дата публикации: 2013-04-11.

Integrated circuit with matching threshold voltages and method for making same

Номер патента: US09583480B2. Автор: Robert Beach,Jianjun Cao,Alexander Lidow,Alana Nakata,Guangyuan Zhao,Yanping Ma,Robert Strittmatter,Chunhua ZHOU,Seshadri Kolluri,Fang-Chang Liu,Ming-Kun Chiang,Jiali Cao,Agus Jauhar. Владелец: Efficient Power Conversion Corp. Дата публикации: 2017-02-28.

Extremely thin semiconductor-on-insulator (etsoi) integrated circuit with on-chip resistors and method of forming the same

Номер патента: US20120187493A1. Автор: Kangguo Cheng,Bruce B. Doris,Ali Khakifirooz,Ghavam G. Shahidi. Владелец: International Business Machines Corp. Дата публикации: 2012-07-26.

Resistor structures of integrated circuit devices including stacked transistors and methods of forming the same

Номер патента: EP4174939A1. Автор: Byounghak Hong,Kangill Seo,Seungchan Yun,Inchan HWANG,Hyoeun Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-05-03.

Integrated circuits having source/drain structure and method of making

Номер патента: US11923200B2. Автор: Shih-Hsien Huang,Chien-Chang Su,Yi-Fang Pai. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-03-05.

Integrated circuits with fets having nanowires and methods of manufacturing the same

Номер патента: US20160254382A1. Автор: Jan Hoentschel,Stefan Flachowsky,Gerd Zschaetzsch. Владелец: Globalfoundries Inc. Дата публикации: 2016-09-01.

Integrated circuits with dual silicide contacts and methods for fabricating same

Номер патента: US20160049490A1. Автор: Guillaume Bouche,Andy Wei,Jeremy A. Wahl,Shao Ming Koh. Владелец: Globalfoundries Inc. Дата публикации: 2016-02-18.

Integrated circuits including replacement gate structures and methods for fabricating the same

Номер патента: US20160163824A1. Автор: Min-Hwa Chi,Xusheng Wu,Dong-woon Shin. Владелец: Globalfoundries Inc. Дата публикации: 2016-06-09.

Semiconductor integrated circuit device with a surface and method of manufacturing the same

Номер патента: US20170207098A1. Автор: Keun Kyu Kong,Min Seok Son,Jae Hee SIM,Jeong Hoon AN. Владелец: SK hynix Inc. Дата публикации: 2017-07-20.

Integrated circuit structure with semiconductor devices and method of fabricating the same

Номер патента: US20220271035A1. Автор: Yan-Hsiu Liu,Wei-Lun Hsu,Ji-Fu Kung,Yung-Chien Kung,Ming-Tsung Yeh,Am-Tay Luy,Yao-Pi Hsu. Владелец: United Microelectronics Corp. Дата публикации: 2022-08-25.

Integrated circuit structure with semiconductor devices and method of fabricating the same

Номер патента: US11417654B2. Автор: Yan-Hsiu Liu,Wei-Lun Hsu,Ji-Fu Kung,Yung-Chien Kung,Ming-Tsung Yeh,Am-Tay Luy,Yao-Pi Hsu. Владелец: United Microelectronics Corp. Дата публикации: 2022-08-16.

Integrated circuit structure with semiconductor devices and method of fabricating the same

Номер патента: US10784261B2. Автор: Yan-Hsiu Liu,Wei-Lun Hsu,Ji-Fu Kung,Yung-Chien Kung,Ming-Tsung Yeh,Am-Tay Luy,Yao-Pi Hsu. Владелец: United Microelectronics Corp. Дата публикации: 2020-09-22.

Integrated circuit structure with semiconductor devices and method of fabricating the same

Номер патента: US11916075B2. Автор: Yan-Hsiu Liu,Wei-Lun Hsu,Ji-Fu Kung,Yung-Chien Kung,Ming-Tsung Yeh,Am-Tay Luy,Yao-Pi Hsu. Владелец: United Microelectronics Corp. Дата публикации: 2024-02-27.

Integrated circuit including a body transistor and method

Номер патента: US20090261411A1. Автор: Dongping Wu. Владелец: Qimonda AG. Дата публикации: 2009-10-22.

Integrated circuit including multiple height cell and method of designing the same

Номер патента: US20220005801A1. Автор: Sungok Lee,SangDo Park,Dayeon CHO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-01-06.

Integrated circuit including a bipolar transistor and methods of making the same

Номер патента: US20120235280A1. Автор: Yeur-Luen Tu,Shih-Chang Liu,Chun-Tsung Kuo,Wei-Tung Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2012-09-20.

Integrated circuit device having dielectric layer, and method and apparatus for manufacturing the integrated circuit device

Номер патента: US20190355804A1. Автор: Kyu-Ho Cho,Young-Geun Park,Young-Lim Park,Jong-bom Seo,Chang-Hwa Jung,Sun-min MOON. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-11-21.

Integrated circuit including ferroelectric memory cells and methods for manufacturing

Номер патента: US20180233573A1. Автор: James Lin,Francesco Anthony Annetta. Владелец: Individual. Дата публикации: 2018-08-16.

Analog integrated circuit with improved transistor lifetime and method for manufacturing the same

Номер патента: US20210028167A1. Автор: Ruigang Li,Zheng Zuo,Na Ren. Владелец: AZ Power Inc. Дата публикации: 2021-01-28.

INTEGRATED CIRCUIT STRUCTURE HAVING GATE CONTACT AND METHOD OF FORMING SAME

Номер патента: US20180012839A1. Автор: Zang Hui,Watts Josef S.. Владелец: . Дата публикации: 2018-01-11.

INTEGRATED CIRCUIT STRUCTURE WITH CRACK STOP AND METHOD OF FORMING SAME

Номер патента: US20170062355A1. Автор: Greco Stephen E.,Quon Roger A.,Liang Jim S.,Ogino Atsushi. Владелец: . Дата публикации: 2017-03-02.

INTEGRATED CIRCUIT HAVING IMPROVED ELECTROMIGRATION PERFORMANCE AND METHOD OF FORMING SAME

Номер патента: US20170236780A1. Автор: Chudzik Michael P.,Krishnan Siddarth A.,Simon Andrew H.,Gluschenkov Oleg,NAG Joyeeta,Ray Shishir K.. Владелец: . Дата публикации: 2017-08-17.

INTEGRATED CIRCUIT DEVICES INCLUDING METAL WIRES AND METHODS OF FORMING THE SAME

Номер патента: US20220045003A1. Автор: BAE TAEYONG,SEO HOONSEOK. Владелец: . Дата публикации: 2022-02-10.

INTEGRATED CIRCUITS HAVING GATE CAP PROTECTION AND METHODS OF FORMING THE SAME

Номер патента: US20150206844A1. Автор: Horak David V.,Ponoth Shom,Cai Xiuyu,Lee Jin Wook,Surisetty Charan Veera Venkata Satya,Pham Daniel Thanh Khae,Haran Bala Subramanian Pranatharthi. Владелец: . Дата публикации: 2015-07-23.

Integrated circuit devices including a via and methods of forming the same

Номер патента: KR20230037438A. Автор: 안상훈,남서우,밍 헤,앤소니 동익 이,하르소노 심카. Владелец: 삼성전자주식회사. Дата публикации: 2023-03-16.

Integrated circuit devices including a via and methods of forming the same

Номер патента: EP4148775B1. Автор: Harsono Simka,Ming He,Sang Hoon AHN,Seowoo Nam,Anthony Dongick LEE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-05-01.

Integrated circuits with an insultating layer and methods for producing such integrated circuits

INTEGRATED CIRCUIT WITH BURIED POWER RAIL AND METHODS OF MANUFACTURING THE SAME

Номер патента: US20220139835A1. Автор: Hong Joon Goo,Rodder Mark S.,Seo Kang-Ill. Владелец: . Дата публикации: 2022-05-05.

INTEGRATED CIRCUITS WITH AN AIR GAP AND METHODS OF PRODUCING THE SAME

Номер патента: US20160118292A1. Автор: RYAN Errol Todd,He Ming,Zhao Larry,Child Craig,Augur Roderick Alan. Владелец: . Дата публикации: 2016-04-28.

INTEGRATED CIRCUIT WITH BURIED POWER RAIL AND METHODS OF MANUFACTURING THE SAME

Номер патента: US20200402909A1. Автор: Hong Joon Goo,Rodder Mark S.,Seo Kang-Ill. Владелец: . Дата публикации: 2020-12-24.

INTEGRATED CIRCUITS HAVING CRACK-STOP STRUCTURES AND METHODS FOR FABRICATING THE SAME

Номер патента: US20150171025A1. Автор: Zhang Fan,SHAO WEI,TAN Juan Boon. Владелец: GLOBALFOUNDRIES Singapore Pte. Ltd.. Дата публикации: 2015-06-18.

Integrated circuit structure without gate contact and method of forming same

Номер патента: US20180061976A1. Автор: Min-Hwa Chi,Hui Zang,Manfred J. Eller,Jerome J. B. Ciavatti. Владелец: Globalfoundries Inc. Дата публикации: 2018-03-01.

Integrated circuit structure without gate contact and method of forming same

Номер патента: US09842927B1. Автор: Min-Hwa Chi,Hui Zang,Jerome J. B. Ciavatti,Manfred J Eller. Владелец: Globalfoundries Inc. Дата публикации: 2017-12-12.

Integrated circuit device including stacked transistors and methods of fabrication the same

Номер патента: US20240363633A1. Автор: Jaehong Lee,Kang-ill Seo,Sooyoung Park,Seungchan Yun,Myung YANG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-10-31.

Integrated circuit device including stacked transistors and methods of fabricating the same

Номер патента: EP4456124A1. Автор: Jaehong Lee,Kang-ill Seo,Sooyoung Park,Seungchan Yun,Myung YANG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-10-30.

Device for taking images, integrated circuit for image taking element and method of processing taken images

Номер патента: RU2367108C2. Автор: Такахиро ФУКУХАРА. Владелец: Сони Корпорейшн. Дата публикации: 2009-09-10.

Integrated circuit devices including stacked transistors and methods of forming the same

Номер патента: EP4451319A2. Автор: Kang-ill Seo,Seung Min Song,Panjae PARK. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-10-23.

Integrated circuit devices including stacked transistors and methods of forming the same

Номер патента: US20240355878A1. Автор: Kang-ill Seo,Seung Min Song,Panjae PARK. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-10-24.

Integrated circuits with magnetic tunnel junctions and methods for producing the same

Номер патента: US09865801B1. Автор: Kangho Lee,Kazutaka Yamane,Vinayak Bharat Naik. Владелец: GLOBALFOUNDRIES SINGAPORE PTE LTD. Дата публикации: 2018-01-09.

Integrated circuits with magnetic tunnel junctions and methods for producing the same

Номер патента: US20170345999A1. Автор: Kangho Lee,Kazutaka Yamane,Seungmo Noh. Владелец: GLOBALFOUNDRIES SINGAPORE PTE LTD. Дата публикации: 2017-11-30.

Integrated circuit device including integrated insulator and methods of fabrication the same

Номер патента: EP4333039A1. Автор: Kang-ill Seo,Seungchan Yun,Seungmin Song,MyungHoon JUNG,Keumseok PARK. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-03-06.

Integrated circuits resistant to electrostatic discharge and methods for producing the same

Номер патента: US09741849B1. Автор: Tsung-Che Tsai,Chien-Hsin Lee,Mahadeva Iyer NATARAJAN,Manjunatha Prabhu,Xiangxiang LU. Владелец: GLOBALFOUNDRIES SINGAPORE PTE LTD. Дата публикации: 2017-08-22.

Optical control modules for integrated circuit device patterning and reticles and methods including the same

Номер патента: US20200348587A1. Автор: Antonius Hendrikus Jozef Kamphuis,Johannes Cobussen,Leendertjan Mekking. Владелец: NXP USA Inc. Дата публикации: 2020-11-05.

Integrated circuit devices including stacked transistors and methods of forming the same

Номер патента: US20240332131A1. Автор: Jintae Kim,Kang-ill Seo,Keumseok PARK. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-10-03.

Integrated circuit devices including stacked transistors and methods of forming the same

Номер патента: EP4439645A1. Автор: Jintae Kim,Kang-ill Seo,Keumseok PARK. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-10-02.

Integrated circuit comprising a clamping structure and method of adjusting a threshold voltage of a clamping transistor

Номер патента: US09490244B2. Автор: Anton Mauder,Jens Barrenscheen. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2016-11-08.

Integrated circuit device having a resistor and method of manufacturing the same

Номер патента: US20140138759A1. Автор: Keon-Soo Kim,Young-Ho Lee,Seong-Soon Cho,Jin- Hyun SHIN. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2014-05-22.

Integrated circuit devices including intergate spacer and methods of fabrication the same

Номер патента: US20240371880A1. Автор: Kang-ill Seo,Seungchan Yun,Jaejik Baek. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-11-07.

Semiconductor integrated circuit device having vertical channel and method of manufacturing the same

Номер патента: US09640587B2. Автор: Kang Sik Choi. Владелец: SK hynix Inc. Дата публикации: 2017-05-02.

Semiconductor integrated circuit device having reservoir capacitor and method of manufacturing the same

Номер патента: US20150357377A1. Автор: Hae Chan PARK. Владелец: SK hynix Inc. Дата публикации: 2015-12-10.

Integrated circuits with lateral bipolar transistors and methods for fabricating the same

Номер патента: US09761664B1. Автор: Vaddagere Nagaraju Vasantha Kumar,Wei Gao,Chien-Hsin Lee,Manjunatha Prabhu,Xiangxiang LU. Владелец: GLOBALFOUNDRIES SINGAPORE PTE LTD. Дата публикации: 2017-09-12.

Integrated circuits including replacement gate structures and methods for fabricating the same

Номер патента: US09761691B2. Автор: Min-Hwa Chi,Xusheng Wu,Dong-woon Shin. Владелец: Globalfoundries Inc. Дата публикации: 2017-09-12.

Integrated Circuit Devices Including a Capacitor and Methods of Forming the Same

Номер патента: US20070207587A1. Автор: Wan-Don Kim,Cha-young Yoo,Jin-Yong Kim,Suk-Jin Chung. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2007-09-06.

Semiconductor integrated circuit device including switching elements and method of manufacturing the same

Номер патента: US09741931B1. Автор: Hong Jung Kim,Young Hee YOON,Jeong Ho YI. Владелец: SK hynix Inc. Дата публикации: 2017-08-22.

Integrated circuits including LDMOS transistor structures and methods for fabricating LDMOS transistor structures

Номер патента: US09793394B1. Автор: Ming Zhu,Pinghui Li,Yiang Aun Nga,Shi Ya Phyllis Lim. Владелец: GLOBALFOUNDRIES SINGAPORE PTE LTD. Дата публикации: 2017-10-17.

Integrated circuit with nano-conductor sensors, measuring device, method of measurement and method of manufacture

Номер патента: RU2638125C2. Автор: Йохан Хендрик КЛОТВИЙК,Марлен МЕСХЕР,Мануэль Эдуардо АЛАРКОН-РИВЕРО,ВИЛД Нико Марис Адриан ДЕ. Владелец: КОНИНКЛЕЙКЕ ФИЛИПС Н.В.. Дата публикации: 2017-12-11.

Integrated circuit device body bias circuits and methods

Номер патента: US09853019B2. Автор: Lawrence T. Clark,David A. Kidd,Augustine Kuo. Владелец: Mie Fujitsu Semiconductor Ltd. Дата публикации: 2017-12-26.

Integrated circuit device body bias circuits and methods

Номер патента: US09548086B2. Автор: Lawrence T. Clark,David A. Kidd,Augustine Kuo. Владелец: Mie Fujitsu Semiconductor Ltd. Дата публикации: 2017-01-17.

Integrated circuit having a level shifter and method of making the same

Номер патента: US9362320B2. Автор: Yuichiro Yamashita,Po-Sheng Chou. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-06-07.

System for designing integrated circuit using extracted model parameter and method of manufacturing integrated circuit using the same

Номер патента: US20200004911A1. Автор: Yo-Han Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-01-02.

Interposers for integrated circuits with multiple-time programming and methods for manufacturing the same

Номер патента: US09806128B2. Автор: Yi Jiang,Danny Shum,Juan Boon Tan,Shunqiang Gong. Владелец: GLOBALFOUNDRIES SINGAPORE PTE LTD. Дата публикации: 2017-10-31.

Integrated circuit devices including stacked transistors and methods of forming the same

Номер патента: US20240096889A1. Автор: Kang-ill Seo,Seungchan Yun,Seung Min Song. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-03-21.

Integrated circuit device including integrated insulator and methods of fabrication the same

Номер патента: US20240072048A1. Автор: Kang-ill Seo,Seungchan Yun,Seungmin Song,MyungHoon JUNG,Keumseok PARK. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-02-29.

Integrated circuit / printed circuit board assembly and method of manufacture

Номер патента: US11910519B2. Автор: Quentin Diduck,Douglas A. Kirkpatrick. Владелец: Eridan Communications Inc. Дата публикации: 2024-02-20.

Integrated circuit system with bandgap material and method of manufacture thereof

Номер патента: US20120119281A1. Автор: Eng Huat Toh,Jae Gon Lee,Chung Foong Tan,Chunshan YIN,Lakshmi Bera. Владелец: GLOBALFOUNDRIES SINGAPORE PTE LTD. Дата публикации: 2012-05-17.

Integrated circuit including multi-height cells and method of designing the same

Номер патента: US20230378156A1. Автор: Minjae Jeong,Jungho DO,Jaehee Cho,Jisu YU,Geonwoo Nam,Hyeongyu You. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-11-23.

Integrated circuit provided with overvoltage protection and method for manufacture thereof

Номер патента: EP1352429A2. Автор: Henricus A. L. Van Lieverloo. Владелец: KONINKLIJKE PHILIPS ELECTRONICS NV. Дата публикации: 2003-10-15.

Integrated circuit provided with overvoltage protection and method for manufacture thereof

Номер патента: WO2002033753A2. Автор: Henricus A. L. Van Lieverloo. Владелец: KONINKLIJKE PHILIPS ELECTRONICS N.V.. Дата публикации: 2002-04-25.

Electrooptic or optoelectric integrated circuit enabling a bias-tee and method for fabricating the same

Номер патента: EP4224249A1. Автор: Juerg Leuthold,David MOOR. Владелец: Eidgenoessische Technische Hochschule Zurich ETHZ. Дата публикации: 2023-08-09.

Electrooptic or optoelectric integrated circuit enabling a bias-tee and method for fabricating the same

Номер патента: WO2023148197A1. Автор: Juerg Leuthold,David MOOR. Владелец: ETH Zurich. Дата публикации: 2023-08-10.

Integrated circuit features with obtuse angles and method of forming same

Номер патента: US12087715B2. Автор: Yen-Sen Wang,Shu-Wei Chung. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-10.

Integrated circuit features with obtuse angles and method of forming same

Номер патента: US20240363561A1. Автор: Yen-Sen Wang,Shu-Wei Chung. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-31.

Decoupling capacitor closely coupled with integrated circuit

Номер патента: US20070065983A1. Автор: Robert Vinson,Donald Beck,Gregory Jandzio,Joseph Brief. Владелец: HARRIS CORP. Дата публикации: 2007-03-22.

Integrated Circuit Features with Obtuse Angles and Method of Forming Same

Номер патента: US20210074656A1. Автор: Yen-Sen Wang,Shu-Wei Chung. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-03-11.

Integrated circuit structure having gate contact and method of forming same

Номер патента: US20190006280A1. Автор: Hui Zang,Josef S. Watts. Владелец: Globalfoundries Inc. Дата публикации: 2019-01-03.

Integrated Circuit Features with Obtuse Angles and Method of Forming Same

INTEGRATED CIRCUITS INCLUDING A MIMCAP DEVICE AND METHODS OF FORMING THE SAME FOR LONG AND CONTROLLABLE RELIABILITY LIFETIME

Номер патента: US20160064472A1. Автор: Cheng Lili,CHU Sanford,Fox Robert,Brunco David Paul,Triyoso Dina H.,PARK Jeasung. Владелец: . Дата публикации: 2016-03-03.

Integrated Circuit Structures Comprising Conductive Vias And Methods Of Forming Conductive Vias

Номер патента: US20170062338A1. Автор: Liu Zengtao T.. Владелец: . Дата публикации: 2017-03-02.

Integrated Circuit Structures Comprising Conductive Vias And Methods Of Forming Conductive Vias

Номер патента: US20170338181A1. Автор: Liu Zengtao T.. Владелец: . Дата публикации: 2017-11-23.

Integrated Circuit Structures Comprising Conductive Vias And Methods Of Forming Conductive Vias

Номер патента: US20180350742A1. Автор: Liu Zengtao T.. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2018-12-06.

Integrated Circuit Features With Obtuse Angles and Method Forming Same

Номер патента: US20200161260A1. Автор: Yen-Sen Wang,Shu-Wei Chung. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-05-21.

Integrated Circuit Package and Method

Номер патента: US20230245939A1. Автор: Ming-Che Ho,Chi-Ming Tsai,Chung-Shi Liu,Hao-Yi Tsai,Chih-Wei Lin,Ming Hung TSENG,Yen-Liang Lin,Tzu-Sung Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-08-03.

THREE-DIMENSIONAL (3D) MEMORY CELL SEPARATION AMONG 3D INTEGRATED CIRCUIT (IC) TIERS, AND RELATED 3D INTEGRATED CIRCUITS (3DICs), 3DIC PROCESSOR CORES, AND METHODS

Номер патента: US20150302919A1. Автор: Xie Jing,Du Yang. Владелец: . Дата публикации: 2015-10-22.

Integrated circuit device featuring an antifuse and method of making same

Номер патента: US20140001568A1. Автор: Xia Li,Zhongze Wang,John J. Zhu. Владелец: Qualcomm Inc. Дата публикации: 2014-01-02.

INTEGRATED CIRCUIT DEVICE FEATURING AN ANTIFUSE AND METHOD OF MAKING SAME

Номер патента: US20140210043A1. Автор: Li Xia,Wang Zhongze,Zhu John Jianhong. Владелец: QUALCOMM INCORPORATED. Дата публикации: 2014-07-31.

INTEGRATED CIRCUIT COMPRISING AN ANTIFUSE STRUCTURE AND METHOD OF REALIZING

Номер патента: US20180130740A1. Автор: Fornara Pascal,Rivero Christian. Владелец: . Дата публикации: 2018-05-10.

Integrated Circuit Comprising an Antifuse Structure and Method of Realizing

Номер патента: US20190172785A1. Автор: Fornara Pascal,Rivero Christian. Владелец: . Дата публикации: 2019-06-06.

INTEGRATED CIRCUITS WITH SELF ALIGNED CONTACTS AND METHODS OF MANUFACTURING THE SAME

Номер патента: US20160379881A1. Автор: He Ming,Mignot Yann,Nam Seowoo,Standaert Theodorus,Kelly Jim,Patlotta Raghuveer. Владелец: . Дата публикации: 2016-12-29.

INTEGRATED CIRCUIT COMPRISING AN ANTIFOUBLE STRUCTURE, AND METHOD OF MAKING SAME

Номер патента: FR3058567B1. Автор: Pascal Fornara,Christian Rivero. Владелец: STMICROELECTRONICS ROUSSET SAS. Дата публикации: 2019-01-25.

Integrated circuit comprising an antifuse structure and method of realizing

Номер патента: US10242944B2. Автор: Pascal Fornara,Christian Rivero. Владелец: STMICROELECTRONICS ROUSSET SAS. Дата публикации: 2019-03-26.

Integrated circuit with buried power rail and methods of manufacturing the same

Номер патента: KR20200145651A. Автор: 서강일,홍준구,마크 로더. Владелец: 삼성전자주식회사. Дата публикации: 2020-12-30.

INTEGRATED CIRCUITS WITH HIGH VOLTAGE DEVICES AND METHODS FOR PRODUCING THE SAME

Номер патента: US20180082999A1. Автор: Zhang Fan,SHUM Danny Pak-Chum,CAI Xinshu. Владелец: . Дата публикации: 2018-03-22.

Metal-Insulator-Metal capacitor having high capacitance, integrated circuit chip having the same and method for manufacturing the same

Номер патента: KR100480641B1. Автор: 이경우,김일구,이수근,이용준,박완재,안정훈,이경태,정무경. Владелец: 삼성전자주식회사. Дата публикации: 2005-03-31.

Semiconductor integrated circuit device, manufacturing method and the design method of the same

Номер патента: TW415046B. Автор: Toshifumi Takeda,Koichi Nagasawa,Masahiro Shigeniwa,Yohei Yamada,Yasushi Kawabuchi. Владелец: HITACHI LTD. Дата публикации: 2000-12-11.

Integrated circuits having place-efficient capacitors and methods for fabricating the same

Номер патента: US8236645B1. Автор: Dmytro Chumakov. Владелец: Globalfoundries Inc. Дата публикации: 2012-08-07.

Integrated circuits having place-efficient capacitors and methods for fabricating the same

Номер патента: US8546915B2. Автор: Dmytro Chumakov. Владелец: GLOBLFOUNDRIES Inc. Дата публикации: 2013-10-01.

Circuit package apparatus, systems, and methods

Номер патента: US20040188811A1. Автор: Rajendran Nair,Gilroy Vandentop. Владелец: Intel Corp. Дата публикации: 2004-09-30.

method of of forming interconnection lines in a semiconductor memory device

Номер патента: KR100558493B1. Автор: 나영섭. Владелец: 삼성전자주식회사. Дата публикации: 2006-03-07.

Inductor on integrated circuit and methods for manufacture

Номер патента: EP1234314A1. Автор: Donald Gardner. Владелец: Intel Corp. Дата публикации: 2002-08-28.

Inductor for integrated circuit and methods of manufacture

Номер патента: WO2001039220A9. Автор: Donald Gardner. Владелец: Intel Corp. Дата публикации: 2002-08-15.

Capacitor having high electrostatic capacity, integrated circuit device including the capacitor and method of fabricating the same

Номер патента: US20070200159A1. Автор: Kyung-Tae Lee,Byung-Jun Oh,Yoon-hae Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2007-08-30.

Integrated circuit packages and methods of forming the same

Номер патента: US20240312836A1. Автор: Yung-Chi Lin,Yi-Hsiu Chen,Ming-Tsu Chung. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-19.

MONOLITHIC INTEGRATED CIRCUIT INCORPORATING AN INDUCTIVE COMPONENT AND METHOD FOR MANUFACTURING SUCH AN INTEGRATED CIRCUIT

Номер патента: FR2791470A1. Автор: Ahmed Mhani,Laurent Basteres,François Valentin,Jean Michel Karam. Владелец: Memscap SA. Дата публикации: 2000-09-29.

Integrated circuit having a programmable element and method of operating the circuit

Номер патента: US6788129B2. Автор: Helmut Schneider,Jörg Peter,Jürgen Lindolf,Florian Schamberger. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2004-09-07.

Integrated circuits including integrated passive devices and methods of manufacture thereof

Номер патента: CN103872009A. Автор: 任小伟,W·R·博格尔. Владелец: FREESCALE SEMICONDUCTOR INC. Дата публикации: 2014-06-18.

Integrated circuits including integrated passive devices and methods of manufacture thereof

Номер патента: EP2744003B1. Автор: Xiaowei Ren,Wayne R. Burger. Владелец: NXP USA Inc. Дата публикации: 2020-02-12.

Integrated Circuits with Magnetic Core Inductors and Methods of Fabrications Thereof

Номер патента: US20120086102A1. Автор: Wolfgang Klein,Carsten Ahrens,Alexander Glas,Renate Hofmann. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2012-04-12.

INTEGRATED CIRCUIT INCLUDING ASYMMETRIC DECOUPLING CELL AND METHOD OF DESIGNING THE SAME

Номер патента: US20220102336A1. Автор: CHO SUNGWE,JIN Subin. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2022-03-31.

Integrated Circuit having a MOM Capacitor and Method of Making Same

Номер патента: US20190123042A1. Автор: LIU Chi-Wen,Wang Chao-Hsiung. Владелец: . Дата публикации: 2019-04-25.

Integrated Circuit Having Stress Tuning Layer and Methods of Manufacturing Same

Номер патента: US20160181209A1. Автор: Jeng Shin-Puu,Lu Szu Wei,Chao Clinton. Владелец: . Дата публикации: 2016-06-23.

Integrated circuit device featuring an antifuse and method of making same

Номер патента: US9842802B2. Автор: Xia Li,John Jianhong ZHU,Zhongze Wang. Владелец: Qualcomm Inc. Дата публикации: 2017-12-12.

Integrated circuit having a mom capacitor and method of making same

Номер патента: KR101365899B1. Автор: 차오-시웅 왕,치-웬 류. Владелец: 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드. Дата публикации: 2014-02-21.

INTEGRATED CIRCUITS INCLUDING MAGNETIC CORE INDUCTORS AND METHODS FOR FABRICATING THE SAME

Номер патента: US20160133565A1. Автор: TAN Juan Boon,YI Wanbing,ENGLAND Luke,BHATKAR Mahesh,PENG Lulu. Владелец: . Дата публикации: 2016-05-12.

INTERPOSERS FOR INTEGRATED CIRCUITS WITH ONE-TIME PROGRAMMING AND METHODS FOR MANUFACTURING THE SAME

Номер патента: US20160343719A1. Автор: Liu Wei,Jiang Yi,Shum Danny,TAN Juan Boon. Владелец: . Дата публикации: 2016-11-24.

Integrated circuit arrangement with several components and method for their production

Номер патента: DE19716102C2. Автор: Holger Huebner,Anton Anthofer. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2003-09-25.

Integrated circuit with a programmable element and method for its operation

Номер патента: DE10156830A1. Автор: Helmut Schneider,Joerg Peter,Florian Schamberger,Juergen Lindolf. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2003-06-05.

Integrated circuits protected against reverse engineering and method for fabricating the same using vias without metal terminations

Номер патента: TW577138B. Автор: Lap-Wai Chow,William M Clark Jr,James P Baukas. Владелец: Hrl Lab Llc. Дата публикации: 2004-02-21.

System and method to enhance reliability in connection with arrangements including circuits

Номер патента: US11264301B2. Автор: Sungjun Im,Yoong Tatt Chin,Lee Kong Yu,Chun Sean Lau,Paramjeet Singh Gill,Weng-Hong Teh. Владелец: Western Digital Technologies Inc. Дата публикации: 2022-03-01.

INTEGRATED CIRCUIT ASSEMBLIES WITH REINFORCEMENT FRAMES, AND METHODS OF MANUFACTURE

Номер патента: US20150262972A1. Автор: Woychik Charles G.,Mirkarimi Laura Wills,Katkar Rajesh,Sitaram Arkalgud. Владелец: . Дата публикации: 2015-09-17.

Integrated circuit packages and methods

Номер патента: US20240234210A1. Автор: Ching-Hua Hsieh,Chih-Wei Lin,Yen-Hung Chen,Kung-Chen Yeh,Sung-Yueh Wu,Jen-Chun Liao. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-11.

Apparatus and method for direct power delivery to integrated circuit package

Номер патента: US12107047B2. Автор: Joel Richard Goergen,Victor Liu,Stephen Aubrey Scearce,Louis Smidt,Kadin Stephens. Владелец: Cisco Technology Inc. Дата публикации: 2024-10-01.

Integrated circuit packaging system with film assistance mold and method of manufacture thereof

Номер патента: US20130154121A1. Автор: Jaehyun Lee,DokOk Yu,Ki Youn Jang. Владелец: Individual. Дата публикации: 2013-06-20.

Integrated circuit packaging system with bumps and method of manufacture thereof

Номер патента: US20100320589A1. Автор: Lionel Chien Hui Tay,Jose Alvin Caparas,Zigmund Ramirez Camacho,Emmanuel Espiritu. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2010-12-23.

Integrated circuit package with plated heat spreader

Номер патента: US09559036B1. Автор: Yuanlin Xie,Steven Hsieh. Владелец: Altera Corp. Дата публикации: 2017-01-31.

Integrated Circuit Package with Sensor and Method of Making

Номер патента: US20170253476A1. Автор: Makoto Shibuya,Noboru Nakanishi,Luu Nguyen. Владелец: Texas Instruments Inc. Дата публикации: 2017-09-07.

SEMICONDUCTOR INTEGRATED CIRCUITS, MULTI-CHIP PACKAGE, AND OPERATION METHOD OF SEMICONDUCTOR INTEGRATED CIRCUITS

Номер патента: US20220301635A1. Автор: HIYAMIZU Daisaku. Владелец: Kioxia Corporation. Дата публикации: 2022-09-22.

Integrated circuit structure having laminated structure and method of manufacturing the same

Номер патента: JP4658857B2. Автор: ハインリッヒ，ケーナー. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2011-03-23.

Integrated circuit comprising a layer stack and method of fabrication

Номер патента: EP2251900A2. Автор: Heinrich Korner. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2010-11-17.

Integrated circuits including copper pillar structures and methods for fabricating the same

Номер патента: US20150187714A1. Автор: Liu Wei,TAN Juan Boon,OSWALD Jens,Mahesh Anant Bhatkar. Владелец: GLOBALFOUNDRIES SINGAPORE PTE LTD. Дата публикации: 2015-07-02.

Integrated circuits including copper pillar structures and methods for fabricating the same

Номер патента: TWI552292B. Автор: 威劉,馬希斯安特貝哈卡爾,元文陳,詹歐沙德. Владелец: 格羅方德半導體私人有限公司. Дата публикации: 2016-10-01.

For the carrier of wafer package and the packaging method of chip

Номер патента: CN110364470A. Автор: 王东升,姜立芳,刘茗,赖磊平. Владелец: Shanghai Rui Jie Things Technology Co Ltd. Дата публикации: 2019-10-22.

Integrated circuit structure with metal crack stop and methods of forming same

Номер патента: US09589911B1. Автор: Stephen E. Greco,Atsushi Ogino,Roger A. Quon,Jim S. Liang. Владелец: Globalfoundries Inc. Дата публикации: 2017-03-07.

INTEGRATED CIRCUIT INCLUDING MULTIPLE-HEIGHT CELL AND METHOD OF MANUFACTURING THE INTEGRATED CIRCUIT

Номер патента: US20200051977A1. Автор: BAEK Sang-hoon,LEE Dal-hee,Lim Jin-Young,Park Jae-ho,YOU Hyeon-gyu. Владелец: . Дата публикации: 2020-02-13.

SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE WITH RESERVOIR CAPACITORS AND METHOD OF MANUFACTURING THE SAME

Номер патента: US20170236825A1. Автор: KIM Jong Su,LEE Dong Kun. Владелец: . Дата публикации: 2017-08-17.

Integrated circuit package including sealed gaps and prevention of vapor induced failures and method of manufacturing the same

Номер патента: WO2004030094A1. Автор: Xuejun Fan. Владелец: U.S. Philips Corporation. Дата публикации: 2004-04-08.

Integrated circuit, system and method of forming same

Номер патента: US12131998B2. Автор: Wei-Cheng Lin,Shih-Wei Peng,Jiann-Tyng Tzeng,Kam-Tou SIO,Te-Hsin Chiu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-29.

Integrated circuits and methods of forming the same with metal layer connection to through-semiconductor via

Номер патента: US09761481B2. Автор: Chun Yu Wong,Sarasvathi Thangaraju,Percival Rayo. Владелец: Globalfoundries Inc. Дата публикации: 2017-09-12.

Integrated circuit with electrical fuse and method of forming the same

Номер патента: US20170062335A1. Автор: Chan-Hong Chern,Fu-Lung Hsueh,Kuoyuan (Peter) Hsu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-03-02.

MICROELECTRONIC ASSEMBLIES WITH INTEGRATED CIRCUITS AND INTERPOSERS WITH CAVITIES, AND METHODS OF MANUFACTURE

Номер патента: US20160013151A1. Автор: Shen Hong,Woychik Charles G.,SITARAM Arkalgud R.. Владелец: . Дата публикации: 2016-01-14.

Integrated circuit package and method of forming same

Номер патента: US20230314702A1. Автор: Chen-Hua Yu,Wen-hao Cheng,Chuei-Tang Wang,Chung-Hao Tsai,Tung-Liang Shao. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-10-05.

Integrated circuit packages and methods

Номер патента: US20240234340A1. Автор: Tsung-Shu Lin,Hsin-Yu Pan,Yi-Che CHIANG,Yuan Sheng Chiu,Hong-Yu Guo. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-11.

Integrated circuit package and method having wire-bonded intra-die electrical connections

Номер патента: US20050224964A1. Автор: Ivor Barber. Владелец: LSI Logic Corp. Дата публикации: 2005-10-13.

Integrated circuit packages and methods of forming the same

Номер патента: US12125812B2. Автор: Chen-Hua Yu,Chuei-Tang Wang,Shih-Chang Ku,Chien-Yuan Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-22.

Integrated circuit packages and methods of forming the same

Номер патента: US20240379601A1. Автор: Chen-Hua Yu,Chuei-Tang Wang,Shih-Chang Ku,Chien-Yuan Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-11-14.

Integrated devices in semiconductor packages and methods of forming same

Номер патента: US11749626B2. Автор: Chen-Hua Yu,Chung-Shi Liu,Chao-Wen Shih,Kai-Chiang Wu,Shou Zen Chang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-09-05.

Integrated circuit structure with refractory metal alignment marker and methods of forming same

Номер патента: US09806032B1. Автор: Wei Lin,Upinder Singh,Nailong He. Владелец: Globalfoundries Inc. Дата публикации: 2017-10-31.

Optical integrated circuit structure including edge coupling protective features and method of forming same

Номер патента: US20240201458A1. Автор: Hau-yan Lu,Chia-Ping Lai,Chien-Ying WU,YuehYing LEE,Sui-Ying Hsu,Chen-Hao Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-06-20.

Co-Packaging Assembly and Method for Attaching Photonic Dies/Modules to Multi-Chip Active/Passive Substrate

Номер патента: US20240337799A1. Автор: Michael Su,Bryan Black,Michael Alfano,Siddharth Ravichandran. Владелец: Chipletz Inc. Дата публикации: 2024-10-10.

Co-packaging assembly and method for attaching photonic dies/modules to multi-chip active/passive substrate

Номер патента: WO2024211918A1. Автор: Michael Su,Bryan Black,Michael Alfano,Siddharth Ravichandran. Владелец: Chipletz, Inc.. Дата публикации: 2024-10-10.

Semiconductor die package and methods of formation

Номер патента: US20240258302A1. Автор: Shu-Hui SU,Hsin-Li Cheng,Yingkit Felix Tsui. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-01.

Monolithic MEMS and integrated circuit device having a barrier and method of fabricating the same

Номер патента: US20080006889A1. Автор: Brett M. Diamond,Matthew A. Zeleznik. Владелец: Akustica Inc. Дата публикации: 2008-01-10.

Packages for integrated circuits and methods of packaging integrated circuits

Номер патента: US09786838B2. Автор: Angelo V. Ugge. Владелец: Everspin Technologies Inc. Дата публикации: 2017-10-10.

Electronic assembly with high capacity thermal interface and methods of manufacture

Номер патента: EP1342268A2. Автор: Gregory M. Chrysler,Abhay A. Watwe. Владелец: Intel Corp. Дата публикации: 2003-09-10.

Integrated circuit with replacement gate stacks and method of forming same

Номер патента: US09922884B2. Автор: Ruqiang Bao,Siddarth A. Krishnan. Владелец: International Business Machines Corp. Дата публикации: 2018-03-20.

Systems and methods for charging a cleaning solution used for cleaning integrated circuit substrates

Номер патента: EP1774578A1. Автор: Suraj Puri. Владелец: Individual. Дата публикации: 2007-04-18.

Integrated circuit with replacement gate stacks and method of forming same

Номер патента: US09589806B1. Автор: John A. Fitzsimmons,Unoh Kwon,Ruqiang Bao,Huihang Dong. Владелец: Globalfoundries Inc. Дата публикации: 2017-03-07.

Integrated circuit, construction of integrated circuitry, and method of forming an array

Номер патента: EP3776645A4. Автор: Kevin R. Shea,Gurpreet Lugani,Alex Kogan,Kyle B. Campbell,Mario J. DI CINO,Aaron W. FREESE. Владелец: Micron Technology Inc. Дата публикации: 2022-01-05.

Substrate, integrated circuit device including the substrate, and method of manufacturing the integrated circuit device

Номер патента: US20200043728A1. Автор: Yeon-Sook Kim,Doek-gil Ko,In-ji LEE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-02-06.

Integrated circuit with replacement gate stacks and method of forming same

Номер патента: US10553498B2. Автор: Ruqiang Bao,Siddarth A. Krishnan. Владелец: International Business Machines Corp. Дата публикации: 2020-02-04.

Integrated circuit with replacement gate stacks and method of forming same

Номер патента: US20180102294A1. Автор: Ruqiang Bao,Siddarth A. Krishnan. Владелец: International Business Machines Corp. Дата публикации: 2018-04-12.

Integrated circuits having source/drain structure and method of making

Номер патента: US20230298891A1. Автор: Shih-Hsien Huang,Chien-Chang Su,Yi-Fang Pai. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-09-21.

Method of manufacturing polycrystalline capacitors and resistors during integrated circuit process and integrated circuit obtained therewith

Номер патента: WO1992003843A1. Автор: Gord Harling,François CORDEAU. Владелец: Mitel Corporation. Дата публикации: 1992-03-05.

Silicon nitride-free isolation methods for integrated circuits

Номер патента: US5966614A. Автор: Tai-su Park,Ho-kyu Kang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 1999-10-12.

Composite gate structure in an integrated circuit

Номер патента: US20070111425A1. Автор: Kuang-Hsin Chen,Liang-Kai Han,I-Lu Wu. Владелец: Individual. Дата публикации: 2007-05-17.

Integrated circuit capacitors having composite titanium oxide and tantalum pentoxide dielectric layers therein

Номер патента: US6433380B2. Автор: Dong-Won Shin. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2002-08-13.

INTEGRATED CIRCUIT WITH REPLACEMENT GATE STACKS AND METHOD OF FORMING SAME

Номер патента: US20180096900A1. Автор: Krishnan Siddarth A.,Bao Ruqiang. Владелец: . Дата публикации: 2018-04-05.

INTEGRATED CIRCUIT WITH REPLACEMENT GATE STACKS AND METHOD OF FORMING SAME

Номер патента: US20180102294A1. Автор: Krishnan Siddarth A.,Bao Ruqiang. Владелец: . Дата публикации: 2018-04-12.

INTEGRATED CIRCUIT WITH REPLACEMENT GATE STACKS AND METHOD OF FORMING SAME

Номер патента: US20170110375A1. Автор: Krishnan Siddarth A.,Bao Ruqiang. Владелец: . Дата публикации: 2017-04-20.

Integrated circuit structures with cavity spacers

Номер патента: US20240186398A1. Автор: Jack T. Kavalieros,Patrick Morrow,Justin Weber,Rishabh Mehandru,Aaron D. Lilak,Anh Phan,Stephen M. Cea,Salim BERRADA. Владелец: Intel Corp. Дата публикации: 2024-06-06.

Systems and methods for charging a cleaning solution used for cleaning integrated circuit substrates

Номер патента: WO2006010052A1. Автор: Suraj Puri. Владелец: Suraj Puri. Дата публикации: 2006-01-26.

Integrated Circuit, Construction Of Integrated Circuitry, And Method Of Forming An Array

Номер патента: US20200035498A1. Автор: Shea Kevin R.,Campbell Kyle B.,Kogan Alex,Lugani Gurpreet,Di Cino Mario J.,Freese Aaron W.. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2020-01-30.

Integrated Circuit, Construction of Integrated Circuitry, and Method of Forming an Array

Номер патента: US20200266071A1. Автор: Shea Kevin R.,Campbell Kyle B.,Kogan Alex,Lugani Gurpreet,Di Cino Mario J.,Freese Aaron W.. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2020-08-20.

Method of fabricating a charge trap nand flash memory device

Номер патента: US20130087849A1. Автор: Marcello Mariani,Giulio Albini,Paolo Tessariol,Umberto M. Meotto,Paola Bacciaglia. Владелец: Micron Technology Inc. Дата публикации: 2013-04-11.

Integrated circuit devices with well regions and methods for forming the same

Номер патента: US11735485B2. Автор: Chi-Feng Huang,Chia-Chung Chen,Victor Chiang Liang,Mingo Liu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-08-22.

Strained silicon—germanium integrated circuit with inversion capacitance enhancement and method to fabricate same

Номер патента: US09484412B1. Автор: Takashi Ando,Pouya Hashemi,Alexander Reznicek,Pranita Kerber. Владелец: International Business Machines Corp. Дата публикации: 2016-11-01.

Silicon-on-insulator integrated circuit devices with body contact structures and methods for fabricating the same

Номер патента: US9685364B2. Автор: PURAKH Raj Verma,Guan Huei See,Rui Tze TOH,Shaoqiang Zhang. Владелец: GLOBALFOUNDRIES SINGAPORE PTE LTD. Дата публикации: 2017-06-20.

INTEGRATED CIRCUIT DEVICES INCLUDING A VIA AND METHODS OF FORMING THE SAME

Номер патента: US20200144103A1. Автор: LEE Jong Hyun,Simka Harsono,Kim Yung Bae. Владелец: . Дата публикации: 2020-05-07.

Integrated Circuit Comprising an Amorphous Region and Method of Manufacturing an Integrated Circuit

Номер патента: US20080283832A1. Автор: Dietmar Henke,Sven Schmidbauer,Matthias Goldbach. Владелец: Qimonda AG. Дата публикации: 2008-11-20.

SUBSTRATE, INTEGRATED CIRCUIT DEVICE INCLUDING THE SUBSTRATE, AND METHOD OF MANUFACTURING THE INTEGRATED CIRCUIT DEVICE

Номер патента: US20200043728A1. Автор: KIM Yeon-Sook,Ko Doek-gil,LEE In-ji. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2020-02-06.

Integrated Circuit Features With Obtuse Angles and Method Forming Same

Номер патента: US20200161260A1. Автор: Chung Shu-Wei,Wang Yen-Sen. Владелец: . Дата публикации: 2020-05-21.

A method of preparing an integrated circuit for transmission electron microscopy and method of monitoring the circuit

Номер патента: DE69631748T2. Автор: Masao Minato-ku Okihara. Владелец: Oki Electric Industry Co Ltd. Дата публикации: 2005-01-20.

Method for forming a copper (cu) barrier/seed bilayer for integrated circuit device fabrication

Номер патента: SG169312A1. Автор: Ng Chee Mang,DAMAYANTI Martina,Sritharan Thirumany. Владелец: Globalfoundries Sg Pte Ltd. Дата публикации: 2011-03-30.

INTEGRATED CIRCUITS WITH A TUNGSTEN COMPONENT AND METHODS FOR PRODUCING SUCH INTEGRATED CIRCUITS

Номер патента: US20150228543A1. Автор: Liu Huang,Yu Jialin,Xia Jilin,Bohra Girish. Владелец: GLOBALFOUNDRIES, Inc.. Дата публикации: 2015-08-13.

Integrated circuit, integrated circuit including a memory device, and method for manufacturing same

Номер патента: TW201926644A. Автор: 劉建宏,洪至偉. Владелец: 台灣積體電路製造股份有限公司. Дата публикации: 2019-07-01.

THREE-DIMENSIONAL INTEGRATED CIRCUIT OF C-MOS TYPE AND METHOD OF MANUFACTURE

Номер патента: FR2896620A1. Автор: Laurent Clavelier,Jean Pierre Joly,Olivier Faynot. Владелец: Commissariat a lEnergie Atomique CEA. Дата публикации: 2007-07-27.

Method of preparing a plan-view sample of an integrated circuit for transmission electron microscopy, and methods of observing the sample

Номер патента: EP0784211A2. Автор: Masao Okihara. Владелец: Oki Electric Industry Co Ltd. Дата публикации: 1997-07-16.

Semiconductor integrated circuit having overlapping circuit cells and method for designing circuit pattern therefor

Номер патента: US4701778A. Автор: Shigenori Baba,Nobuhiko Aneha. Владелец: Fujitsu Ltd. Дата публикации: 1987-10-20.

Nanowire transistor structure and method of shaping

Номер патента: US11869973B2. Автор: William Hsu,Biswajeet Guha,Bruce Beattie,Jun Sung Kang,Kai Loon CHEONG,Aditya Kasukurti,Erica J. Thompson. Владелец: Intel Corp. Дата публикации: 2024-01-09.

Nanowire transistor structure and method of shaping

Номер патента: US20240088296A1. Автор: William Hsu,Biswajeet Guha,Bruce Beattie,Jun Sung Kang,Kai Loon CHEONG,Aditya Kasukurti,Erica J. Thompson. Владелец: Intel Corp. Дата публикации: 2024-03-14.

THREE-DIMENSIONAL INTEGRATED CIRCUIT OF C-MOS TYPE AND METHOD OF MANUFACTURE

Номер патента: FR2896620B1. Автор: Laurent Clavelier,Jean Pierre Joly,Olivier Faynot. Владелец: Commissariat a lEnergie Atomique CEA. Дата публикации: 2008-05-30.

Semiconductor Substrate, Integrated Circuit Having the Semiconductor Substrate, and Methods of Manufacturing the Same

Номер патента: US20130200456A1. Автор: Zhu Huilong,Zhong Huicai,Yin Haizhou,Luo Zhijiong. Владелец: . Дата публикации: 2013-08-08.

INTEGRATED CIRCUITS HAVING FINFET SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME TO RESIST SUB-FIN CURRENT LEAKAGE

Номер патента: US20150034941A1. Автор: Liu Yanxiang,Hargrove Michael,GRUENSFELDER Christian. Владелец: GLOBALFOUNDRIES, Inc.. Дата публикации: 2015-02-05.

Integrated circuit structure with semiconductor devices and method of fabricating the same

INTEGRATED CIRCUIT STRUCTURE WITH SEMICONDUCTOR DEVICES AND METHOD OF FABRICATING THE SAME

Номер патента: US20220271035A1. Автор: Hsu Wei-Lun,Kung Ji-Fu,Kung Yung-Chien,Yeh Ming-Tsung,Liu Yan-Hsiu,Luy Am-Tay,Hsu Yao-Pi. Владелец: . Дата публикации: 2022-08-25.

INTEGRATED CIRCUITS HAVING SOURCE/DRAIN STRUCTURE AND METHOD OF MAKING

Номер патента: US20220285157A1. Автор: Su Chien-Chang,Pai Yi-Fang,Huang Shih-Hsien. Владелец: . Дата публикации: 2022-09-08.

SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE WITH A SURFACE AND METHOD OF MANUFACTURING THE SAME

Номер патента: US20170207098A1. Автор: Kong Keun Kyu,An Jeong Hoon,SIM Jae Hee,SON Min Seok. Владелец: . Дата публикации: 2017-07-20.

INTEGRATED CIRCUIT STRUCTURE WITH SEMICONDUCTOR DEVICES AND METHOD OF FABRICATING THE SAME

Номер патента: US20180204838A1. Автор: Hsu Wei-Lun,Kung Ji-Fu,Kung Yung-Chien,Yeh Ming-Tsung,Liu Yan-Hsiu,Luy Am-Tay,Hsu Yao-Pi. Владелец: . Дата публикации: 2018-07-19.

Integrated circuits with fets having nanowires and methods of manufacturing the same

Three-dimensional semiconductor device including integrated circuit, transistors and transistor components and method of fabrication

Номер патента: US20190326301A1. Автор: Jeffrey Smith,Anton J. deVilliers. Владелец: Tokyo Electron Ltd. Дата публикации: 2019-10-24.

INTEGRATED CIRCUITS HAVING SOURCE/DRAIN STRUCTURE AND METHOD OF MAKING

Номер патента: US20200350432A1. Автор: Su Chien-Chang,Pai Yi-Fang,Huang Shih-Hsien. Владелец: . Дата публикации: 2020-11-05.

INTEGRATED CIRCUIT STRUCTURE WITH SEMICONDUCTOR DEVICES AND METHOD OF FABRICATING THE SAME

Номер патента: US20200381431A1. Автор: Hsu Wei-Lun,Kung Ji-Fu,Kung Yung-Chien,Yeh Ming-Tsung,Liu Yan-Hsiu,Luy Am-Tay,Hsu Yao-Pi. Владелец: . Дата публикации: 2020-12-03.

Integrated circuit with layered superlattice material and method of fabricating same

Номер патента: WO1994010704A1. Автор: Hitoshi Watanabe,Takashi Mihara,Larry D. McMillan,Hiroyuki Yoshimori,Shuzo Hiraide,Carlos A. Paz De Aruajo. Владелец: Olympus Optical Co., Ltd.. Дата публикации: 1994-05-11.

INTEGRATED CIRCUIT WITH LAYERED SUPERLATTICE MATERIAL AND METHOD OF FABRICATING SAME

Номер патента: KR950704814A. Автор: 래리 디. 맥밀란,히토시 와타나베,히로유키 요시모리,슈조 히라이데,타카시 미하라,카로스 에이. 파즈 데 아라조. Владелец: 게리 에프, 더 벤윅. Дата публикации: 1995-11-20.

Integrated circuit with variable gate structure and method of making the same

Номер патента: CN104867824B. Автор: M·乔希,M·埃勒,R·J·卡特,S·B·萨玛瓦丹姆. Владелец: Globalfoundries Inc. Дата публикации: 2020-04-17.

Integrated Circuit (IC) including memory device and method of manufacturing the same

Номер патента: CN109817640B. Автор: 刘建宏,洪至伟. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-01-22.

MOS transistors having a multi-work function metal nitride gate electrode, CMOS integrated circuit devices employing the same, and methods of fabricating the same

Номер патента: KR100724563B1. Автор: 김민주,시게노부 마에다,왕싸오췐. Владелец: 삼성전자주식회사. Дата публикации: 2007-06-04.

Semiconductor integrated circuit including a bidirectional transistor and method of making the same

Номер патента: US3483446A. Автор: Binne Van Der Leest. Владелец: Westinghouse Electric Corp. Дата публикации: 1969-12-09.

Integrated circuit structure with dielectric isolation and method of making the same

Номер патента: CA924820A. Автор: A. Trongo Pasquale,M. Kisinko Paul,G. Ernick Fred. Владелец: Westinghouse Electric Corp. Дата публикации: 1973-04-17.

Method of fabricating a charge trap NAND flash memory device

Номер патента: US9224873B2. Автор: Marcello Mariani,Giulio Albini,Paolo Tessariol,Umberto M. Meotto,Paola Bacciaglia. Владелец: Micron Technology Inc. Дата публикации: 2015-12-29.

Integrated Circuit Devices with Well Regions and Methods for Forming the Same

Номер патента: US20140001518A1. Автор: Chi-Feng Huang,Chia-Chung Chen,Victor Chiang Liang,Mingo Liu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2014-01-02.

Integrated circuits including copper local interconnects and methods for the manufacture thereof

Номер патента: US20130193489A1. Автор: Peter Baars,Erik P. Geiss. Владелец: Globalfoundries Inc. Дата публикации: 2013-08-01.

Integrated circuits with improved gate uniformity and methods for fabricating same

Номер патента: US20140077274A1. Автор: Xiuyu Cai,Kangguo Cheng,Ali Khakifirooz,Ruilong Xie. Владелец: International Business Machines Corp. Дата публикации: 2014-03-20.

INTEGRATED CIRCUITS WITH PROGRAMMABLE ELECTRICAL CONNECTIONS AND METHODS FOR FABRICATING THE SAME

Номер патента: US20150016174A1. Автор: Liu Yanxiang,Chi Min-Hwa. Владелец: . Дата публикации: 2015-01-15.

ANALOG INTEGRATED CIRCUIT WITH IMPROVED TRANSISTOR LIFETIME AND METHOD FOR MANUFACTURING THE SAME

Номер патента: US20210028167A1. Автор: REN NA,ZUO ZHENG,LI RUIGANG. Владелец: AZ Power, Inc. Дата публикации: 2021-01-28.

INTEGRATED CIRCUIT WITH MATCHING THRESHOLD VOLTAGES AND METHOD FOR MAKING SAME

Номер патента: US20150034962A1. Автор: Cao Jianjun,Lidow Alexander,Beach Robert,Nakata Alana,Zhou Chunhua,Strittmatter Robert,Kolluri Seshadri,Ma Yanping,Liu Fang Chang,Chiang Ming-Kun,Cao Jiali,Zhao Guangyuan,Jauhar Agus. Владелец: . Дата публикации: 2015-02-05.

Integrated circuits with a bowed substrate, and methods for producing the same

Номер патента: US20160064513A1. Автор: Ralf Richter,Joanna WASYLUK,Gerd Zschatzsch. Владелец: Globalfoundries Inc. Дата публикации: 2016-03-03.

INTEGRATED CIRCUITS HAVING SMOOTH METAL GATES AND METHODS FOR FABRICATING SAME

Номер патента: US20150076624A1. Автор: Liu Huang,Yu Jialin,Xia Jilin. Владелец: GLOBALFOUNDRIES, Inc.. Дата публикации: 2015-03-19.

FINFET INTEGRATED CIRCUITS WITH UNIFORM FIN HEIGHT AND METHODS FOR FABRICATING THE SAME

Номер патента: US20140203376A1. Автор: Xie Ruilong,Cai Xiuyu. Владелец: GLOBALFOUNDRIES INC.. Дата публикации: 2014-07-24.

INTEGRATED CIRCUITS WITH SHALLOW TRENCH ISOLATIONS, AND METHODS FOR PRODUCING THE SAME

Номер патента: US20150145000A1. Автор: LIN Kun-Hsien,Yan Ran,Zaka Alban,Sassiat Nicolas. Владелец: GLOBALFOUNDRIES, Inc.. Дата публикации: 2015-05-28.

INTEGRATED CIRCUITS INCLUDING REPLACEMENT GATE STRUCTURES AND METHODS FOR FABRICATING THE SAME

Номер патента: US20160163824A1. Автор: Chi Min-Hwa,Wu Xusheng,SHIN Dong-Woon. Владелец: . Дата публикации: 2016-06-09.

INTEGRATED CIRCUITS WITH DUAL SILICIDE CONTACTS AND METHODS FOR FABRICATING SAME

Номер патента: US20160172493A1. Автор: Wahl Jeremy A.,Bouche Guillaume,Wei Andy C.,Koh Shao Ming. Владелец: . Дата публикации: 2016-06-16.

Integrated Circuit With A Gate Structure And Method Making The Same

Номер патента: US20180175029A1. Автор: Kuo-Cheng Ching,Ying-Keung Leung,Chi On Chui. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-06-21.

Integrated circuit including ferroelectric memory cells and methods for manufacturing

Номер патента: US20180233573A1. Автор: Lin James,Annetta Francesco Anthony. Владелец: . Дата публикации: 2018-08-16.

Integrated Circuit Devices with Well Regions and Methods for Forming the Same

Номер патента: US20210305099A1. Автор: CHEN Chia-Chung,LIU Mingo,Liang Victor Chiang,Huang Chi-Feng. Владелец: . Дата публикации: 2021-09-30.

INTEGRATED CIRCUITS HAVING NICKEL SILICIDE CONTACTS AND METHODS FOR FABRICATING THE SAME

Номер патента: US20150311221A1. Автор: TAN Yun Ling,Wang Chuan,SEET CHIM SENG,See Alex,HUANG Jingyan. Владелец: GLOBALFOUNDRIES Singapore Pte. Ltd.. Дата публикации: 2015-10-29.

INTEGRATED CIRCUITS HAVING IMPROVED GATE STRUCTURES AND METHODS FOR FABRICATING SAME

Номер патента: US20150325482A1. Автор: Liu Huang,HU Xiang. Владелец: GLOBALFOUNDRIES, Inc.. Дата публикации: 2015-11-12.

Integrated Circuit with a Gate Structure and Method Making the Same

Номер патента: US20180350803A1. Автор: Kuo-Cheng Ching,Ying-Keung Leung,Chi On Chui. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-12-06.

Integrated circuit (IC) plating deposition system and method

Номер патента: US6341998B1. Автор: Liming Zhang. Владелец: VLSI Technology Inc. Дата публикации: 2002-01-29.

Integrated circuit with matching threshold voltages and method for making same

Номер патента: TWI615977B. Автор: 建軍曹,羅伯特畢曲,亞力山大里道,亞雷納納卡塔,趙廣元,馬豔萍,羅伯特史瑞特瑪特,周春華,謝斯海德里庫魯里,劉芳昌,江銘崑,曹佳麗,阿古斯猶哈爾. Владелец: 高效電源轉換公司. Дата публикации: 2018-02-21.

Integrated circuit with matching threshold voltages and method for making same

Номер патента: KR102249390B1. Автор: 로버트 비치,지안준 까오,알렉산더 리도우,아라나 나카타,꽝유안 쟈오,양핑 마,로버트 스트리트마터,춘화 쩌우,시샤드리 콜루리,팡 창 리우,밍-쿤 치앙,찌아리 까오,아구스 자우하르. Владелец: 이피션트 파워 컨버젼 코퍼레이션. Дата публикации: 2021-05-10.

CONDUCTOR FRAME CUTTING DEVICE FOR INTEGRATED CIRCUIT BOXES OF VARIOUS DIMENSIONS AND METHOD FOR PREPARING THE SAME.

Номер патента: FR2685815B1. Автор: Richard H J Fierkens. Владелец: FIERKENS RICHARD. Дата публикации: 1995-11-10.

Integrated circuits having replacement gate structures and methods for fabricating the same

Номер патента: US8722485B1. Автор: Huang Liu,Haiting Wang,Seung Kim,Yiqun Liu,Tae-hoon Kim,Wei Hua Tong. Владелец: Globalfoundries Inc. Дата публикации: 2014-05-13.

Integrated circuits with replacement metal gates and methods for fabricating the same

Номер патента: US9698241B1. Автор: Min-Hwa Chi,Mitsuhiro Togo,Suraj K. Patil. Владелец: Globalfoundries Inc. Дата публикации: 2017-07-04.

Integrated circuits with improved gate uniformity and methods for fabricating same

Номер патента: US8748309B2. Автор: Xiuyu Cai,Kangguo Cheng,Ali Khakifirooz,Ruilong Xie. Владелец: International Business Machines Corp. Дата публикации: 2014-06-10.

Integrated circuit with protected implantation profiles and method for the formation thereof

Номер патента: SG111195A1. Автор: Lai Tommy,Jia Zhen Zheng,Pradeep Ramachandram Yelehanka,Weining Li. Владелец: Chartered Semiconductor Mfg. Дата публикации: 2005-05-30.

Integrated circuit with matching threshold voltages and method for making same

Номер патента: WO2015017513A3. Автор: Robert Beach,Jianjun Cao,Alexander Lidow,Alana Nakata,Guangyuan Zhao,Yanping Ma,Robert Strittmatter,Chunhua ZHOU,Seshadri Kolluri,Ming-Kun Chiang,Jiali Cao,Agus Jauhar,Fang Chang Liu. Владелец: Efficient Power Conversion Corporation. Дата публикации: 2015-11-05.

Integrated circuit with matching threshold voltages and method for making same

Номер патента: TW201513364A. Автор: Robert Beach,Jianjun Cao,Alexander Lidow,Alana Nakata,Robert Strittmatter,Seshadri Kolluri,Fang-Chang Liu,Ming-Kun Chiang,Agus Jauhar,chun-hua Zhou,guang-yuan Zhao,Yan-Ping Ma,Jia-Li Cao. Владелец: Efficient Power Conversion Corp. Дата публикации: 2015-04-01.

Integrated circuit with protected implantation profiles and method for the formation thereof

Номер патента: US20060220110A1. Автор: Jia Zhen Zheng,Tommy Lai,Pradeep Yelehanka,Weining Li. Владелец: Chartered Semiconductor Manufacturing Pte Ltd. Дата публикации: 2006-10-05.

Integrated circuits having nickel silicide contacts and methods for fabricating the same

Номер патента: US9548371B2. Автор: Alex See,Chuan Wang,Yun Ling Tan,Jingyan HUANG,Chim Seng Seet. Владелец: GLOBALFOUNDRIES SINGAPORE PTE LTD. Дата публикации: 2017-01-17.

Integrated circuit having doped semiconductor body and method

Номер патента: US20080122001A1. Автор: Hans-Joachim Schulze,Franz-Josef Niedernostheide,Frank Pfirsch. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2008-05-29.

Light emitting diode package and frame shaping method of the same

Номер патента: EP2408031A3. Автор: Chin-Chang Hsu,Chang-Han Chen. Владелец: Lextar Electronics Corp. Дата публикации: 2013-12-04.

Integrated circuit packaging system with conductive pillars and method of manufacture thereof

Номер патента: US09748203B2. Автор: Kyunghwan Kim,DeokKyung Yang,In Sang Yoon,SeongHun Mun. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2017-08-29.

Stacked semiconductor devices and methods of forming same

Номер патента: US09496189B2. Автор: Chen-Hua Yu,Chien-Hsun Lee,Tsung-Ding Wang,Jung Wei Cheng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-11-15.

Method of forming a stacked-die integrated circuit chip package on a wafer level

Номер патента: MY134235A. Автор: M Lam Ken. Владелец: Atmel Corp. Дата публикации: 2007-11-30.

Method of forming a stacked-die integrated circuit chip package on a wafer level

Номер патента: WO2001067511A2. Автор: Ken M. Lam. Владелец: ATMEL CORPORATION. Дата публикации: 2001-09-13.

Integrated circuit packaging system with dielectric support and method of manufacture thereof

Номер патента: US20120146246A1. Автор: WonJun Ko,DeokKyung Yang,Yeongbeom Ko. Владелец: Individual. Дата публикации: 2012-06-14.

Package to mount chip in integrated circuit and process of its assembly

Номер патента: RU2191445C2. Автор: Стефен Уэсли МАККВЭРРИ,Уэйн Расселл СТОРР,Джеймс Уоррен УИЛСОН. Владелец: Интернэшнл Бизнес Машинз Корпорейшн. Дата публикации: 2002-10-20.

Integrated circuit package and method

Номер патента: US09430604B2. Автор: Xu Zhang,Jong Kim,James Spehar. Владелец: NXP BV. Дата публикации: 2016-08-30.

Integrated circuit packages and methods of forming same

Номер патента: US9455236B2. Автор: Chen-Hua Yu,Chien-Hsun Lee,Tsung-Ding Wang,Jung Wei Cheng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-09-27.

Integrated circuit wave device and method

Номер патента: US09929110B1. Автор: Benjamin Cook,Steve Kummerl,Robert Alan Neidorff,Barry Jon Male. Владелец: Texas Instruments Inc. Дата публикации: 2018-03-27.

Integrated circuit packaging system with under bump metallization and method of manufacture thereof

Номер патента: US09865554B2. Автор: Il Kwon Shim,HeeJo Chi,JunMo Koo,Zigmund Ramirez Camacho,Kyung Moon Kim,Bartholomew Liao Chung Foh. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2018-01-09.

Gate-all-around integrated circuit structures having necked feature

Номер патента: US20230317786A1. Автор: Tahir Ghani,Pratik Patel,Rishabh Mehandru,Mohammad Hasan,Cory Weber,Varun Mishra,Wonil CHUNG. Владелец: Intel Corp. Дата публикации: 2023-10-05.

Base board structure for integrated circuit package and the manufacturing method of the same

Номер патента: TW472376B. Автор: Jr-Hung Chen,Jr-Cheng Wu,Meng-Nan He,Yan-Cheng Huang,Li-Huan Chen. Владелец: Kingpak Tech Inc. Дата публикации: 2002-01-11.

Fin-based nonvolatile memory structures, integrated circuits with such structures, and methods for fabricating same

Номер патента: US09911867B2. Автор: Khee Yong Lim,Kiok Boone Elgin Quek,Ming-Tsang Tsai. Владелец: GLOBALFOUNDRIES SINGAPORE PTE LTD. Дата публикации: 2018-03-06.

Integrated circuit structures with spin torque transfer magnetic random access memory ultilizing aluminum metallization layers and methods for fabricating the same

Номер патента: US09490423B2. Автор: Danny Pak-Chum Shum,Juan Boon Tan,Wanbing YI. Владелец: GLOBALFOUNDRIES SINGAPORE PTE LTD. Дата публикации: 2016-11-08.

Processing system and method for making spherical shaped semiconductor integrated circuits

Номер патента: US6203658B1. Автор: Akira Ishikawa. Владелец: Ball Semiconductor Inc. Дата публикации: 2001-03-20.

INTEGRATED CIRCUIT HAVING VARYING SUBSTRATE DEPTH AND METHOD OF FORMING SAME

Номер патента: US20130285161A1. Автор: Jia Kemiao,KARLIN LISA H.,Desai Hemant D.. Владелец: . Дата публикации: 2013-10-31.

INTEGRATED CIRCUIT STRUCTURE WITHOUT GATE CONTACT AND METHOD OF FORMING SAME

Номер патента: US20180061976A1. Автор: Chi Min-Hwa,Eller Manfred J.,Zang Hui,Ciavatti Jerome J. B.. Владелец: . Дата публикации: 2018-03-01.

Integrated circuit having varying substrate depth and method of forming same

Номер патента: US20150084138A1. Автор: Lisa H. Karlin,Hemant D. Desai,Kemiao Jia. Владелец: FREESCALE SEMICONDUCTOR INC. Дата публикации: 2015-03-26.

Gate-all-around integrated circuit structures having high mobility

Номер патента: US20200105753A1. Автор: Tahir Ghani,Roza Kotlyar,Rishabh Mehandru,Biswajeet Guha,Stephen Cea,Dax CRUM. Владелец: Intel Corp. Дата публикации: 2020-04-02.

Gate-all-around integrated circuit structures having high mobility

Номер патента: US20230116170A1. Автор: Tahir Ghani,Roza Kotlyar,Rishabh Mehandru,Biswajeet Guha,Stephen Cea,Dax CRUM. Владелец: Intel Corp. Дата публикации: 2023-04-13.

Integrated circuit protection using stacked dies

Номер патента: US20240163092A1. Автор: James Anderson,James D. Wesselkamper,Jason J. Moore,Thomas Paul LEBOEUF,Steve E. MCNEIL. Владелец: Xilinx Inc. Дата публикации: 2024-05-16.

Fin-based nonvolatile memory structures, integrated circuits with such structures, and methods for fabricating same

Номер патента: US20180006158A1. Автор: Khee Yong Lim,Kiok Boone Elgin Quek,Ming-Tsang Tsai. Владелец: GLOBALFOUNDRIES SINGAPORE PTE LTD. Дата публикации: 2018-01-04.

Integrated circuit package, wafer assembly and method of producing the wafer assembly

Номер патента: CN112582436A. Автор: S·J·雅各布斯. Владелец: Texas Instruments Inc. Дата публикации: 2021-03-30.

Integrated circuit

Номер патента: US20120199937A1. Автор: Gilberto Curatola,Georgios Vellianitis,Kyriaki Fotopoulou,Nader Akil. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2012-08-09.

INTEGRATED CIRCUITS HAVING DUMMY GATE ELECTRODES AND METHODS OF FORMING THE SAME

Номер патента: US20130093028A1. Автор: CHERN Chan-Hong,HUANG MEI-HUI. Владелец: Taiwan Semiconductor Manufacturing Company, Ltd.. Дата публикации: 2013-04-18.

INTEGRATED CIRCUITS HAVING DUMMY GATE ELECTRODES AND METHODS OF FORMING THE SAME

Номер патента: US20150069530A1. Автор: CHERN Chan-Hong,HUANG MEI-HUI. Владелец: . Дата публикации: 2015-03-12.

INTEGRATED CIRCUITS HAVING DUMMY GATE ELECTRODES AND METHODS OF FORMING THE SAME

Номер патента: US20140217512A1. Автор: CHERN Chan-Hong,HUANG MEI-HUI. Владелец: Taiwan Semiconductor Manufacturing Company, Ltd.. Дата публикации: 2014-08-07.

Integrated circuit board using chip carrier and method of manufacturing the integrated circuit board

Номер патента: JPH0815188B2. Автор: アンディリベリーレスリー,イー．ウィリアムズチャールズ. Владелец: テキサスインスツルメンツインコーポレイテッド. Дата публикации: 1996-02-14.

INTEGRATED CIRCUIT INCLUDING MULTIPLE HEIGHT CELL AND METHOD OF FABRICATING THE INTEGRATED CIRCUIT

Номер патента: US20210384222A1. Автор: LEE Seung-Young,DO Jung-ho,YU Ji-Su,YOU Hyeon-gyu,LEE Jae-boong. Владелец: . Дата публикации: 2021-12-09.

INTEGRATED CIRCUIT INCLUDING MULTIPLE HEIGHT CELL AND METHOD OF FABRICATING THE INTEGRATED CIRCUIT

Номер патента: US20190355749A1. Автор: LEE Seung-Young,DO Jung-ho,YU Ji-Su,YOU Hyeon-gyu,LEE Jae-boong. Владелец: . Дата публикации: 2019-11-21.

Integrated circuit with a gas sensor and method of manufacturing such an integrated circuit

Номер патента: EP2554981A1. Автор: Roel Daamen,Aurelie Humbert,Matthias Merz,David Tio Castro. Владелец: NXP BV. Дата публикации: 2013-02-06.

Tape withh solder forms and methods for transferring solder forms to chip assemblies

Номер патента: US5662262A. Автор: George Chiu,John Francis McMahon. Владелец: Intel Corp. Дата публикации: 1997-09-02.

Spherical shaped semiconductor integrated circuit

Номер патента: US6486071B1. Автор: Akira Ishikawa. Владелец: Ball Semiconductor Inc. Дата публикации: 2002-11-26.

INTEGRATED CIRCUIT DEVICE HAVING DIELECTRIC LAYER, AND METHOD AND APPARATUS FOR MANUFACTURING THE INTEGRATED CIRCUIT DEVICE

Номер патента: US20190355804A1. Автор: Park Young-Lim,CHO Kyu-ho,MOON Sun-min,PARK Young-Geun,SEO Jong-Bom,JUNG Chang-Hwa. Владелец: . Дата публикации: 2019-11-21.

INTEGRATED CIRCUITS INCLUDING INTEGRATED PASSIVE DEVICES AND METHODS OF MANUFACTURE THEREOF

Номер патента: US20140159198A1. Автор: Burger Wayne R.,Ren Xiaowei. Владелец: . Дата публикации: 2014-06-12.

Integrated Circuit / Printed Circuit Board Assembly and Method of Manufacture

Номер патента: US20210160997A1. Автор: Diduck Quentin,Kirkpatrick Douglas A.. Владелец: ERIDAN COMMUNICATIONS, INC.. Дата публикации: 2021-05-27.

Integrated circuit system with test pads and method of manufacture thereof

Номер патента: US20130069063A1. Автор: Bao Xusheng,Rui Huang. Владелец: Individual. Дата публикации: 2013-03-21.

Integrated Circuits With Magnetic Core Inductors And Methods of Fabrications Thereof

Номер патента: US20130260483A1. Автор: Ahrens Carsten,Klein Wolfgang,Glas Alexander,Hofmann Renate. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2013-10-03.

SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE HAVING VERTICAL CHANNEL AND METHOD OF MANUFACTURING THE SAME

Номер патента: US20160013292A1. Автор: CHOI Kang Sik. Владелец: . Дата публикации: 2016-01-14.

Integrated Circuit Device Body Boas Circuits and Methods

Номер патента: US20170047100A1. Автор: Clark Lawrence T.,Kidd David A.,Kuo Augustine. Владелец: . Дата публикации: 2017-02-16.

Integrated Circuit System With Memory Support And Method Of Manufacture Thereof

Номер патента: US20190058009A1. Автор: Yang Chung-Heng. Владелец: . Дата публикации: 2019-02-21.

INTEGRATED CIRCUIT DEVICE HAVING A RESISTOR AND METHOD OF MANUFACTURING THE SAME

Номер патента: US20140138759A1. Автор: Kim Keon-Soo,Lee Young-Ho,CHO Seong-Soon,SHIN Jin- Hyun. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2014-05-22.

THIN INTEGRATED CIRCUIT CHIP-ON-BOARD ASSEMBLY AND METHOD OF MAKING

Номер патента: US20150108640A1. Автор: Stuber Michael A.,Molin Stuart B.,Drucker Mark,Fowler Peter. Владелец: . Дата публикации: 2015-04-23.

Integrated Circuits with Magnetic Core Inductors and Methods of Fabrications Thereof

Номер патента: US20140203399A1. Автор: Ahrens Carsten,Klein Wolfgang,Glas Alexander,Hofmann Renate. Владелец: . Дата публикации: 2014-07-24.

INTEGRATED CIRCUIT ASSEMBLY WITH HEAT SPREADER AND METHOD OF MAKING THE SAME

Номер патента: US20170170164A1. Автор: Amirkhany Amir,Yip T. Gary. Владелец: . Дата публикации: 2017-06-15.

SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE HAVING ENCAPSULATION FILM AND METHOD OF FABRICATING THE SAME

Номер патента: US20160190439A1. Автор: Oh Sang Chul,PARK Hae Chan,LEE Se Ho. Владелец: . Дата публикации: 2016-06-30.

INTEGRATED CIRCUIT INCLUDING A VOLTAGE DIVIDER AND METHODS OF OPERATING THE SAME

Номер патента: US20140307510A1. Автор: LIN Yvonne,Chu Wen-Ting. Владелец: . Дата публикации: 2014-10-16.

Integrated Circuit Having a MOM Capacitor and Method of Making Same

Номер патента: US20160233213A1. Автор: LIU Chi-Wen,Wang Chao-Hsiung. Владелец: . Дата публикации: 2016-08-11.

Integrated Circuit System With Memory Support And Method Of Manufacture Thereof

Номер патента: US20170236870A1. Автор: Yang Chung-Heng. Владелец: . Дата публикации: 2017-08-17.

INTEGRATED CIRCUITS WITH MAGNETIC TUNNEL JUNCTIONS AND METHODS OF PRODUCING THE SAME

Номер патента: US20190252600A1. Автор: Tahmasebi Taiebeh,SEET CHIM SENG,See Kai Hung Alex,Law Wai Cheung,Lim Gerard Joseph,Lew Wen Siang. Владелец: . Дата публикации: 2019-08-15.

INTEGRATED CIRCUIT INCLUDING SIMPLE CELL INTERCONNECTION AND METHOD OF DESIGNING THE SAME

Номер патента: US20210384186A1. Автор: PARK SangDo,Kim Yongcheul,Kwon Jooyeon. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2021-12-09.

SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE HAVING VERTICAL CHANNEL AND METHOD OF MANUFACTURING THE SAME

Номер патента: US20160336376A1. Автор: CHOI Kang Sik. Владелец: . Дата публикации: 2016-11-17.

SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE HAVING RESERVOIR CAPACITOR AND METHOD OF MANUFACTURING THE SAME

Номер патента: US20150357377A1. Автор: PARK Hae Chan. Владелец: . Дата публикации: 2015-12-10.

INTEGRATED CIRCUIT CHIP WITH EXTERNAL PLATES AND METHOD OF MANUFACTURING SUCH CHIP

Номер патента: FR2894716A1. Автор: Briz Olivier Le,Sebastien Marsanne. Владелец: STMICROELECTRONICS SA. Дата публикации: 2007-06-15.

Semiconductor integrated circuit device having vertical channel and method of manufacturing the same

Номер патента: US9425282B2. Автор: Kang Sik Choi. Владелец: SK hynix Inc. Дата публикации: 2016-08-23.

Integrated circuit having a micromagnetic device and method of manufacture therefor

Номер патента: US20010036702A1. Автор: Michael Steigerwald,Dean Kossives,Ashraf Lotfi,Lynn Schneemeyer,R. Van Dover. Владелец: Individual. Дата публикации: 2001-11-01.

Dynamic integrated circuit clusters, modules including same and methods of fabricating

Номер патента: US7208758B2. Автор: Kevin G. Duesman,Timothy B. Cowles,Aron T. Lunde. Владелец: Micron Technology Inc. Дата публикации: 2007-04-24.

Power integrated circuit ("PIC") with vertical IGB and method of making the same

Номер патента: DE69432407D1. Автор: Raffaele Zambrano. Владелец: CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno. Дата публикации: 2003-05-08.

Semiconductor integrated circuit device having MIM capacitor and method of fabricating the same

Номер патента: US7888773B2. Автор: Jung-min Park,Seok-jun Won. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2011-02-15.

Monolithic integrated circuit for picture line scanning, and method of operating it

Номер патента: EP0027545A1. Автор: Heiner Dr. Herbst,Matthias Dipl.-Phys. Niemeyer. Владелец: SIEMENS AG. Дата публикации: 1981-04-29.

Semiconductor integrated circuit device having MIN capacitor and method of fabricating the same

Номер патента: TW200812064A. Автор: Jung-min Park,Seok-Jun Wo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2008-03-01.

COMPONENT HAVING AN INTEGRATED CIRCUIT COMPRISING A CRYPTO-PROCESSOR AND METHOD OF INSTALLATION

Номер патента: FR2901075A1. Автор: Florent Miller,Nadine Buard,Imad Lahoud,Cedric Ruby. Владелец: EADS CCR. Дата публикации: 2007-11-16.

Semi-custom-made semiconductor integrated circuit device, method for customization and method for redesign

Номер патента: GB2378815B. Автор: Naotaka Maeda,Massaharu Mizuno. Владелец: NEC Electronics Corp. Дата публикации: 2005-11-09.

Semi-custom-made semiconductor integrated circuit device, method for customization and method for redesign

Номер патента: US20020145444A1. Автор: Masaharu Mizuno,Naotaka Maeda. Владелец: NEC Corp. Дата публикации: 2002-10-10.

Semi-custom-made semiconductor integrated circuit device, method for customization and method for redesign

Номер патента: US7047514B2. Автор: Masaharu Mizuno,Naotaka Maeda. Владелец: NEC Electronics Corp. Дата публикации: 2006-05-16.

Integrated Circuits with Non-Volatile Memory and Methods for Manufacture

Номер патента: US20150031197A1. Автор: FANG Shenqing,CHEN Chun,Chang Kuo Tung. Владелец: . Дата публикации: 2015-01-29.

INTEGRATED CIRCUITS WITH DUAL SILICIDE CONTACTS AND METHODS FOR FABRICATING SAME

Номер патента: US20160049490A1. Автор: Wei Andy,Wahl Jeremy A.,Bouche Guillaume,Koh Shao Ming. Владелец: . Дата публикации: 2016-02-18.

INTEGRATED CIRCUITS WITH A CORRUGATED GATE, AND METHODS FOR PRODUCING THE SAME

Номер патента: US20150076618A1. Автор: Hoentschel Jan,Richter Ralf,Yan Ran,Sassiat Nicolas. Владелец: GLOBALFOUNDRIES, Inc.. Дата публикации: 2015-03-19.

INTEGRATED CIRCUITS WITH MAGNETIC TUNNEL JUNCTIONS AND METHODS FOR FABRICATING THE SAME

Номер патента: US20190081234A1. Автор: Tahmasebi Taiebeh,Yamane Kazutaka,Houssameddine Dimitri,Lee Kangho,Wang Chenchen Jacob,NAIK Vinayak Bharat,Noh Seungmo. Владелец: . Дата публикации: 2019-03-14.

INTEGRATED CIRCUITS WITH DUAL SILICIDE CONTACTS AND METHODS FOR FABRICATING SAME

Номер патента: US20150091093A1. Автор: Wei Andy,Wahl Jeremy A.,Bouche Guillaume,Koh Shao Ming. Владелец: GLOBAL FOUNDRIES, Inc.. Дата публикации: 2015-04-02.

Integrated Circuits With Non-Volatile Memory and Methods for Manufacture

Номер патента: US20140167139A1. Автор: FANG Shenqing,CHEN Chun,Chang Kuo Tung. Владелец: SPANSION LLC. Дата публикации: 2014-06-19.

INTEGRATED CIRCUITS WITH EMBEDDED MEMORY STRUCTURES AND METHODS FOR FABRICATING THE SAME

Номер патента: US20200098976A1. Автор: Jacob Ajey P.,Ramanathan Eswar. Владелец: . Дата публикации: 2020-03-26.

INTEGRATED CIRCUIT WITH MATCHING THRESHOLD VOLTAGES AND METHOD FOR MAKING SAME

Номер патента: US20160111416A1. Автор: Cao Jianjun,Lidow Alexander,Beach Robert,Nakata Alana,Zhou Chunhua,Strittmatter Robert,Kolluri Seshadri,Ma Yanping,Chiang Ming-Kun,Cao Jiali,Zhao Guangyuan,Liu Fang-Chang,Jauhar Agus. Владелец: . Дата публикации: 2016-04-21.

INTEGRATED CIRCUITS HAVING REPLACEMENT GATE STRUCTURES AND METHODS FOR FABRICATING THE SAME

Номер патента: US20140217482A1. Автор: Cheng Kangguo,Khakifirooz Ali,Xie Ruilong,Cai Xiuyu. Владелец: . Дата публикации: 2014-08-07.

INTEGRATED CIRCUITS WITH IMPROVED GATE UNIFORMITY AND METHODS FOR FABRICATING SAME

Номер патента: US20140231920A1. Автор: Cheng Kangguo,Khakifirooz Ali,Xie Ruilong,Cai Xiuyu. Владелец: . Дата публикации: 2014-08-21.

INTEGRATED CIRCUITS WITH HIGH CURRENT CAPACITY AND METHODS FOR PRODUCING THE SAME

Номер патента: US20180166438A1. Автор: CHENG Chao,LINEWIH Handoko. Владелец: . Дата публикации: 2018-06-14.

INTEGRATED CIRCUITS WITH EMBEDDED MEMORY STRUCTURES AND METHODS FOR FABRICATING THE SAME

Номер патента: US20200194496A1. Автор: Jiang Yi,TAN Juan Boon,YI Wanbing,Hsieh Curtis Chun-I. Владелец: . Дата публикации: 2020-06-18.

Integrated Circuits with Non-Volatile Memory and Methods for Manufacture

Номер патента: US20160218113A1. Автор: FANG Shenqing,CHEN Chun,Chang Kuo Tung. Владелец: . Дата публикации: 2016-07-28.

INTEGRATED CIRCUITS WITH MAGNETIC TUNNEL JUNCTIONS AND METHODS FOR PRODUCING THE SAME

Номер патента: US20170309813A1. Автор: Yamane Kazutaka,Lee Kangho,NAIK Vinayak Bharat. Владелец: . Дата публикации: 2017-10-26.

INTERPOSERS FOR INTEGRATED CIRCUITS WITH MULTIPLE-TIME PROGRAMMING AND METHODS FOR MANUFACTURING THE SAME

Номер патента: US20160343773A1. Автор: Jiang Yi,Shum Danny,TAN Juan Boon,GONG Shunqiang. Владелец: . Дата публикации: 2016-11-24.

INTEGRATED CIRCUITS WITH MAGNETIC TUNNEL JUNCTIONS AND METHODS FOR PRODUCING THE SAME

Номер патента: US20170345999A1. Автор: Yamane Kazutaka,Lee Kangho,Noh Seungmo. Владелец: . Дата публикации: 2017-11-30.

OPTICAL CONTROL MODULES FOR INTEGRATED CIRCUIT DEVICE PATTERNING AND RETICLES AND METHODS INCLUDING THE SAME

Номер патента: US20200348587A1. Автор: Kamphuis Antonius Hendrikus Jozef,Cobussen Johannes,Mekking Leendertjan. Владелец: . Дата публикации: 2020-11-05.

Integrated circuit including multiple height cell and method for manufacturing the same

Номер патента: KR102465964B1. Автор: 유현규,이승영,유지수,도정호,이재붕. Владелец: 삼성전자주식회사. Дата публикации: 2022-11-10.

MONOLITHIC INTEGRATED CIRCUIT WITH FIELD EFFECT TRANSISTORS AND METHOD FOR THEIR PRODUCTION

Номер патента: DE2835642A1. Автор: Walter Dr Phil Kellner,Hermann Dipl Phys Kniepkamp. Владелец: SIEMENS AG. Дата публикации: 1980-02-28.

Semiconductor integrated circuit having a surface-emitting laser, manufacturing method of the same, and electronic equipment

Номер патента: US7286586B2. Автор: Takayuki Kondo. Владелец: Seiko Epson Corp. Дата публикации: 2007-10-23.

Integrated circuit metal-insulator-metal capacitors and methods for manufacturing the same

Номер патента: US20030011013A1. Автор: Wan-Don Kim,Seok-jun Won,Jae-Hyun Joo,Soon-yeon Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2003-01-16.

Integrated circuit with a clamping structure and method for setting a threshold voltage of a clamping transistor

Номер патента: DE102014106486A1. Автор: Anton Mauder,Jens Barrenscheen. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2015-11-12.

Integrated circuits with non-volatile memory and methods for manufacture

Номер патента: US9368588B2. Автор: Chun Chen,Kuo Tung CHANG,Shenqing Fang. Владелец: Morgan Stanley Senior Funding Inc. Дата публикации: 2016-06-14.

Display driver integrated circuit device, film package and module including them

Номер патента: KR100723492B1. Автор: 강사윤,정예정. Владелец: 삼성전자주식회사. Дата публикации: 2007-06-04.

Circuit package attachment apparatus and method

Номер патента: WO1988001827A1. Автор: James G. Leatham. Владелец: Hughes Aircraft Company. Дата публикации: 1988-03-10.

Circuit package attachment apparatus and method.

Номер патента: EP0280700A1. Автор: James G Leatham. Владелец: Hughes Aircraft Co. Дата публикации: 1988-09-07.

Circuit package attachment apparatus and method.

Номер патента: ES2004999A6. Автор: James G Leatham. Владелец: Hughes Aircraft Co. Дата публикации: 1989-02-16.

Semiconductor resist composition, and method and system of forming patterns using the composition

Номер патента: TW202007691A. Автор: 田桓承,文京守,金宰賢,南宮爛,蔡承龍,羅隆熙. Владелец: 南韓商三星Ｓｄｉ股份有限公司. Дата публикации: 2020-02-16.

Test fixture for semiconductor packages and test method of using the same

Номер патента: US20030190826A1. Автор: Huan-Ping Su,Soon-Aik Lu. Владелец: UTAC Taiwan Corp. Дата публикации: 2003-10-09.

Chip package and manufacturing method thereof

Номер патента: US20240219630A1. Автор: Bo Peng,Huaiyu MENG,Yichen SHEN,Yelong Xu,Jinghui ZOU,Xiaoling Mu. Владелец: Shanghai Xizhi Technology Co ltd. Дата публикации: 2024-07-04.

Programmable switch circuit and method, method of manufacture, and devices and systems including the same

Номер патента: TW201006131A. Автор: Madhukar B Vora. Владелец: DSM Solutions Inc. Дата публикации: 2010-02-01.

Substrate for integrated circuit package

Номер патента: US20170243799A1. Автор: Jae Young Choi,Hyung Soo Moon,Joon Soo Kim. Владелец: Corning Precision Materials Co Ltd. Дата публикации: 2017-08-24.

Gate stack for integrated circuit structure and method of forming same

Номер патента: US09748235B2. Автор: Joyeeta Nag,Shafaat Ahmed,Murshed M. Chowdhury,Shahrukh A. Khan,Mohammad Hasanuzzaman,Benjamin G. Moser,Aritra Dasgupta. Владелец: Globalfoundries Inc. Дата публикации: 2017-08-29.

Method of forming an integrated circuit with heat-mitigating diamond-filled channels

Номер патента: US09881849B2. Автор: Daniel J. Ewing,Kyle W. Maples. Владелец: Honeywell Federal Manufacturing and Technologies LLC. Дата публикации: 2018-01-30.

Method of forming an integrated circuit with heat-mitigating diamond-filled channels

Номер патента: US09728483B2. Автор: Daniel J. Ewing,Kyle W. Maples. Владелец: Honeywell Federal Manufacturing and Technologies LLC. Дата публикации: 2017-08-08.

System and method for providing mechanical planarization of a sequential build up substrate for an integrated circuit package

Номер патента: US20030141595A1. Автор: Anthony Chiu,Harry Siegel. Владелец: STMicroelectronics lnc USA. Дата публикации: 2003-07-31.

System and method for providing mechanical planarization of a sequential build up substrate for an integrated circuit package

Номер патента: EP1341231A3. Автор: Anthony M. Chiu,Harry Michael Siegel. Владелец: STMicroelectronics lnc USA. Дата публикации: 2006-07-19.

Integrated circuit structure and method of forming the same

Номер патента: US20230282639A1. Автор: Jiann-Tyng Tzeng,Yi-Hsun CHIU,Hui-Zhong ZHUANG,Chih-Liang Chen,Charles Chew-Yuen Young,Kam-Tou SIO. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-09-07.

Integrated circuits and methods of forming the same with effective dummy gate cap removal

Номер патента: US09917016B2. Автор: Klaus Hempel,Dina Triyoso. Владелец: Globalfoundries Inc. Дата публикации: 2018-03-13.

Integrated circuit structure having through-silicon via and method of forming same

Номер патента: US09805977B1. Автор: John J. Garant,Jorge A. Lubguban,Vijay Sukumaran,Thuy L. Tran-Quinn. Владелец: Globalfoundries Inc. Дата публикации: 2017-10-31.

Method of making air bridges as interelectrode connections of integrated circuits

Номер патента: RU2685082C1. Автор: Михаил Александрович Тарасов,Артем Михайлович Чекушкин,Ренат Альбертович Юсупов. Владелец: Федеральное государственное бюджетное учреждение науки Институт радиотехники и электроники им. В.А. Котельникова Российской академии наук. Дата публикации: 2019-04-16.

Hybrid Integrated Circuit Package and Method

Номер патента: US20210134776A1. Автор: Chen-Hua Yu,Jiun Yi Wu,Hsing-Kuo Hsia. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-05-06.

Integrated circuit devices including a vertical field-effect transistor (vfet) and methods of forming the same

Номер патента: US20210376126A1. Автор: Seon-Bae Kim,Seung Hyun Song,Chang Woo SOHN,Young Chai Jung,Min Cheol Oh. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-12-02.

Integrated circuit devices including a vertical field-effect transistor (vfet) and methods of forming the same

Номер патента: US20210111270A1. Автор: Seon-Bae Kim,Seung Hyun Song,Chang Woo SOHN,Young Chai Jung,Min Cheol Oh. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-04-15.

Method of forming patterns and method of manufacturing integrated circuit device

Номер патента: US09613821B2. Автор: Dong-won Kim,Tae-hoon Kim,Ju-Young Kim,Yool Kang,Su-min Park,Hyung-Rae Lee,Hye-Ji Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-04-04.

Integrated circuit and method of forming same

Номер патента: US20230297754A1. Автор: Po-Sheng Wang,Chien-Chi TIEN,Yangsyu Lin,Chao Yuan Cheng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-09-21.

Integrated circuit and method of forming same

Номер патента: US20240311543A1. Автор: Po-Sheng Wang,Chien-Chi TIEN,Yangsyu Lin,Chao Yuan Cheng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-19.

Integrated circuit structure to resolve deep-well plasma charging problem and method of forming the same

Номер патента: US09449888B2. Автор: David Yen,Kuoyuan (Peter) Hsu,Sung-Chieh Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-09-20.

Method of using platinum metallization in system of redistribution of contact pads of crystals of integrated microcircuits and semiconductor devices

Номер патента: RU2717264C1. Автор: Никита Владимирович Рогозин,Виталий Владимирович Побединский. Владелец: Акционерное общество "Научно-исследовательский институт электронной техники". Дата публикации: 2020-03-19.

Magnetic field sensor integrated circuit with integral ferromagnetic material

Номер патента: US20240222526A1. Автор: William P. Taylor,Ravi Vig,Paul A. David,Andreas P. Friedrich,P. Karl Scheller. Владелец: Allegro Microsystems Inc. Дата публикации: 2024-07-04.

Integrated circuit package assembly

Номер патента: US09786635B2. Автор: Hsien-Wei Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-10-10.

Integrated circuit packages having electrical and optical connectivity and methods of making the same

Номер патента: US12032216B2. Автор: Jin Su Kim,Lars Martin Otfried BRUSBERG,Aramais Robert Zakharian. Владелец: Corning Inc. Дата публикации: 2024-07-09.

Integrated circuit packages having electrical and optical connectivity and methods of making the same

Номер патента: US20240319458A1. Автор: Jin Su Kim,Lars Martin Otfried BRUSBERG,Aramais Robert Zakharian. Владелец: Corning Inc. Дата публикации: 2024-09-26.

Integrated circuit packages having stress-relieving features

Номер патента: US12091310B2. Автор: David A. Grant,Abhijeet Ghoshal. Владелец: Apogee Semiconductor Inc. Дата публикации: 2024-09-17.

Integrated circuits, methods of forming the same, and methods of determining gate dielectric layer electrical thickness in integrated circuits

Номер патента: US09911665B2. Автор: Sung Mun Jung,Ling Wu,Yi Tat Lim,Wenhu Liu. Владелец: GLOBALFOUNDRIES SINGAPORE PTE LTD. Дата публикации: 2018-03-06.

An integrated circuit package, and a method for producing an integrated circuit package having two dies with input and output terminals of integrated circuits of the dies directly addressable for testing of the package

Номер патента: EP1979757A1. Автор: Noel A. Mcnamara. Владелец: Analog Devices Inc. Дата публикации: 2008-10-15.

Exposed pad integrated circuit package

Номер патента: US11769247B2. Автор: Andy Quang Tran,Alok Kumar Lohia,Reynaldo Corpuz Javier. Владелец: Texas Instruments Inc. Дата публикации: 2023-09-26.

Methods and devices for packaging integrated circuits

Номер патента: US20140291782A1. Автор: Yiyi Ma,Kim-yong Goh,Wei Zhen Goh. Владелец: STMICROELECTRONICS PTE LTD. Дата публикации: 2014-10-02.

Robust anode materials, anode layers and methods of making and forming same

Номер патента: WO2024147842A2. Автор: Arrelaine Dameron,David M. King,Jaime DUMONT,Barbara HUGHES,Madison MARTINEZ,Brianna Boeyink,Meghan HERBERT-WALTERS. Владелец: Forge Nano, Inc.. Дата публикации: 2024-07-11.

Integrated circuit comprising an organic semiconductor, and method for the production of an integrated circuit

Номер патента: KR20060087533A. Автор: 마르쿠스 하리크,하겐 클라우크,안드레아스 월터,귄터 슈미드,우테 제스치스창. Владелец: 인피니언 테크놀로지스 아게. Дата публикации: 2006-08-02.

Integrated circuit comprising an organic semiconductor, and method for the production of an integrated circuit

Номер патента: WO2005023940A2. Автор: Günter Schmid,Andreas Walter,Marcus Halik,Hagen Klauk,Ute Zschieschang. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2005-03-17.

INTEGRATED CIRCUIT WITH AN ORGANIC SEMICONDUCTOR AND METHOD FOR PRODUCING AN INTEGRATED CIRCUIT

Номер патента: DE502004009020D1. Автор: Guenter Schmid,Andreas Walter,Marcus Halik,Hagen Klauk,Ute Zschieschang. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2009-04-02.

Composite article with lightning strike protection and method and release film for forming same

Номер патента: US11820916B2. Автор: Clay Parten. Владелец: Wichita State University. Дата публикации: 2023-11-21.

Semiconductor integrated circuit mountable on recording device and method of operating the same

Номер патента: US09501879B2. Автор: Yutaka Funabashi. Владелец: Renesas Electronics Corp. Дата публикации: 2016-11-22.

Integrated circuit having a timing circuit, and method for adjustment of an output signal from the timing circuit

Номер патента: US20020027462A1. Автор: Robert Kaiser,Thilo Schaffroth. Владелец: Individual. Дата публикации: 2002-03-07.

SYSTEMS FOR REDUCING MAGNETIC COUPLING IN INTEGRATED CIRCUITS (ICs), AND RELATED COMPONENTS AND METHODS

Номер патента: WO2014197364A1. Автор: Je-Hsiung Lan,Changhan Yun,Chengjie Zuo,Jonghae Kim,Mario Francisco Velez,Daeik D. KIM,Robert P. MIKULKA,Matthew M. Nowak. Владелец: QUALCOMM INCORPORATED. Дата публикации: 2014-12-11.

Integrated circuit of superconducting circuit blocks and method of designing the same

Номер патента: US6703857B2. Автор: Shinichi Yorozu,Yoshio Kameda. Владелец: NEC Corp. Дата публикации: 2004-03-09.

Integrated circuit of superconducting circuit blocks and method of designing the same

Номер патента: US20030034794A1. Автор: Shinichi Yorozu,Yoshio Kameda. Владелец: NEC Corp. Дата публикации: 2003-02-20.

Integrated circuit comprising voltage modulation circuitry and method threfor

Номер патента: US09484811B2. Автор: Franck Galtie,Eric Rolland,Philippe Goyhenetche. Владелец: FREESCALE SEMICONDUCTOR INC. Дата публикации: 2016-11-01.

An integrated circuit having a circuit for and method of providing intensity correction for a video

Номер патента: EP2396764A1. Автор: Justin G. Delva,Mohammed S. Sayed. Владелец: Xilinx Inc. Дата публикации: 2011-12-21.

Semiconductor integrated circuit mountable on recording device and method of operating the same

Номер патента: US20120188375A1. Автор: Yutaka Funabashi. Владелец: Renesas Electronics Corp. Дата публикации: 2012-07-26.

Semiconductor integrated circuit device with trench capacitor and method of manufacturing the same

Номер патента: US6150686A. Автор: Soichi Sugiura,Shigeki Sugimoto. Владелец: Toshiba Corp. Дата публикации: 2000-11-21.

Optical modulator module, integrated circuit for driving optical modulator, and method for modulating optical signal

Номер патента: US9217883B2. Автор: Tomoaki Kato. Владелец: NEC Corp. Дата публикации: 2015-12-22.

Integrated circuit for physically unclonable function and method of operating the same

Номер патента: US11849054B2. Автор: Sung Ung Kwak. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-12-19.

Integrated circuit for physically unclonable function and method of operating the same

Номер патента: US20240089125A1. Автор: Sung Ung Kwak. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-03-14.

Integrated circuit for physically unclonable function and method of operating the same

Номер патента: US20210399905A1. Автор: Sung Ung Kwak. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-12-23.

SYSTEMS FOR REDUCING MAGNETIC COUPLING IN INTEGRATED CIRCUITS (ICs), AND RELATED COMPONENTS AND METHODS

Номер патента: EP3005562A1. Автор: Je-Hsiung Lan,Changhan Yun,Chengjie Zuo,Jonghae Kim,Mario Francisco Velez,Daeik D. KIM,Robert P. MIKULKA,Matthew M. Nowak. Владелец: Qualcomm Inc. Дата публикации: 2016-04-13.

Integrated circuit comprising voltage modulation circuitry and method therefor

Номер патента: EP2454805A1. Автор: Franck Galtie,Eric Rolland,Philippe Goyhenetche. Владелец: FREESCALE SEMICONDUCTOR INC. Дата публикации: 2012-05-23.

Integrated circuit package comprising a crossed dipole antenna

Номер патента: US12021297B2. Автор: Imran Aziz,Dragos Dancila,Erik Öjefors,Johanna Hanning. Владелец: Sivers Wireless AB. Дата публикации: 2024-06-25.

Integrated circuit for self-interference cancellation and method of performing full-duplex radio communication

Номер патента: EP3394994A1. Автор: Sudip Shekhar,Ahmed El Sayed. Владелец: Intel Corp. Дата публикации: 2018-10-31.

Random number generators, integrated circuits having random number generators, and methods of operating random number generators

Номер патента: EP4184312A1. Автор: Bohdan Karpinskyy,Yongki LEE,Yunhyeok Choi,Jieun Park,Sumin Noh. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-05-24.

Integrated circuit design utilizing array of functionally interchangeable dynamic logic cells

Номер патента: US20060259887A1. Автор: Christophe Tretz. Владелец: International Business Machines Corp. Дата публикации: 2006-11-16.

Random number generators, integrated circuits having random number generators, and methods of operating random number generators

Номер патента: US20230153069A1. Автор: Bohdan Karpinskyy,Yongki LEE,Yunhyeok Choi,Jieun Park,Sumin Noh. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-05-18.

Half-bridge driver circuit, related integrated circuit, half-bridge switching circuit and method

Номер патента: US20240243739A1. Автор: Marco Giovanni Fontana. Владелец: STMICROELECTRONICS SRL. Дата публикации: 2024-07-18.

Semiconductor integrated circuit device, power supply device, and method of controlling power supply device

Номер патента: US09658631B2. Автор: Ming Liu,Tatsuo Nakagawa,Kenichi Osada. Владелец: Renesas Electronics Corp. Дата публикации: 2017-05-23.

Audio amplifier, audio output circuit, integrated circuit for audio, electronic device, and method for amplifying audio signal

Номер патента: US09479129B2. Автор: Takeshi Onodera. Владелец: ROHM CO LTD. Дата публикации: 2016-10-25.

Autonomous and resilient integrated circuit device

Номер патента: WO2021170974A2. Автор: Richard Benjamin Cunliffe. Владелец: CSL DualCom Limited. Дата публикации: 2021-09-02.

A method of operating an autonomous and resilient universal integrated circuit card, UICC, and corresponding device

Номер патента: AU2021227420A1. Автор: Richard Benjamin Cunliffe. Владелец: CSL DUALCOM Ltd. Дата публикации: 2022-09-15.

A method of operating an autonomous and resilient universal integrated circuit card, uicc, and corresponding device

Номер патента: EP4035311A2. Автор: Richard Benjamin Cunliffe. Владелец: CSL DUALCOM Ltd. Дата публикации: 2022-08-03.

Autonomous and resilient integrated circuit device

Номер патента: US20240121849A1. Автор: Richard Benjamin Cunliffe. Владелец: CSL DUALCOM Ltd. Дата публикации: 2024-04-11.

Autonomous and resilient integrated circuit device

Номер патента: US20230121282A1. Автор: Richard Benjamin Cunliffe. Владелец: CSL DUALCOM Ltd. Дата публикации: 2023-04-20.

Logic circuit, integrated circuit including the logic circuit, and method of operating the integrated circuit

Номер патента: JP5866207B2. Автор: 鎬正金,亨洙丁,賢植崔. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-02-17.

Autonomous and resilient integrated circuit device

Номер патента: US11882614B2. Автор: Richard Benjamin Cunliffe. Владелец: CSL DUALCOM Ltd. Дата публикации: 2024-01-23.

Autonomous and resilient integrated circuit device

Номер патента: CA3170526A1. Автор: Richard Benjamin Cunliffe. Владелец: CSL DUALCOM Ltd. Дата публикации: 2021-09-02.

INTEGRATED CIRCUITS INCLUDING CHARGING CIRCUIT AND FLASH DRIVER, METHODS OF OPERATING THE INTEGRATED CIRCUITS, AND ELECTRONIC DEVICES INCLUDING THE INTEGRATED CIRCUITS

Номер патента: US20200241390A1. Автор: KIM Dong-Joon,Lee Chang-Geun,Kwon Min-kyu,Cho Sang-uk. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2020-07-30.

Controller, integrated circuit package, power converter, and method for controlling an isolated power converter

Номер патента: TWI586090B. Автор: 艾力克斯Ｂ狄杰圭利安,劉旋,瑞夫路德. Владелец: 電源整合公司. Дата публикации: 2017-06-01.

Integrated circuit for self-interference cancellation and method of performing full-duplex radio communication

Номер патента: US20210050878A1. Автор: Sudip Shekhar,Ahmed El Sayed. Владелец: Intel Corp. Дата публикации: 2021-02-18.

Rf transmitter and integrated circuit with programmable filter module and methods for use therewith

Номер патента: US20090197560A1. Автор: Ahmadreza (Reza) Rofougaran. Владелец: Broadcom Corp. Дата публикации: 2009-08-06.

Prevented inter-integrated circuit address conflict service system and method thereof

Номер патента: US09977757B2. Автор: Ying-Xian Han. Владелец: Inventec Pudong Technology Corp. Дата публикации: 2018-05-22.

RF transmitter, integrated circuit device, wireless communication unit and method therefor

Номер патента: US09813086B2. Автор: Hua Wang,Chao Lu,Sang Won Son,Paul Cheng Po Liang. Владелец: Mediatek Singapore Pte Ltd. Дата публикации: 2017-11-07.

RF transmitter, integrated circuit device, wireless communication unit and method therefor

Номер патента: US09647866B2. Автор: Hua Wang,Chao Lu,Sang Won Son,Chun-Hsien Peng,Paul Cheng Po Liang,Julia Liu. Владелец: Mediatek Singapore Pte Ltd. Дата публикации: 2017-05-09.

Semiconductor integrated circuit device with overheating protector and method of protecting semiconductor integrated circuit against overheating

Номер патента: EP0821459B1. Автор: Toyofumi Kitano. Владелец: Konami Corp. Дата публикации: 2002-05-02.

Pfc control circuit for a boost converter, related integrated circuit, boost converter, power supply and method

Номер патента: US20210226527A1. Автор: Salvatore Tumminaro,Claudio Adragna,Alfio Pasqua,Marco Sammartano. Владелец: STMICROELECTRONICS SRL. Дата публикации: 2021-07-22.

INTEGRATED CIRCUIT WITH SIGNAL ASSIST CIRCUITRY AND METHOD OF OPERATING THE CIRCUIT

Номер патента: US20150091609A1. Автор: Ashok Ambica,Bohra Fakhruddin Ali,SRINATH Srinivasan. Владелец: ARM LIMITED. Дата публикации: 2015-04-02.

Integrated circuit with signal assist circuitry and method of operating the circuit

Номер патента: US9407265B2. Автор: Fakhruddin Ali Bohra,Srinivasan Srinath,Ambica Ashok. Владелец: ARM LTD. Дата публикации: 2016-08-02.

Integrated circuit with signal assist circuitry and method of operating the circuit

Номер патента: KR101715586B1. Автор: 파크루딘 알리 보라,스리니바산 스리나스,앰비카 아스혹. Владелец: 에이알엠 리미티드. Дата публикации: 2017-03-13.

An integrated circuit having a circuit for and method of providing intensity correction for a video

Номер патента: EP2396764B1. Автор: Justin G. Delva,Mohammed S. Sayed. Владелец: Xilinx Inc. Дата публикации: 2015-10-07.

Integrated circuit with signal assist circuitry and method of operating the circuit

Номер патента: GB201414195D0. Автор: . Владелец: Advanced Risc Machines Ltd. Дата публикации: 2014-09-24.

Integrated Circuit Comprising a Clamping Structure and Method of Adjusting a Threshold Voltage of a Clamping Transistor

Номер патента: US20150326217A1. Автор: Mauder Anton,Barrenscheen Jens. Владелец: . Дата публикации: 2015-11-12.

Interface apparatus between dynamic or clocked chips of integrated circuits in data processing system and method of interfacing the apparatus

Номер патента: CZ302550B6. Автор: Mark Dreps@Daniel,David Ferrailo@Frank,Charles Gower@Kevin. Владелец: INTERNATIONAL BUSINESS MACHINES CORPORATION. Дата публикации: 2011-07-13.

INTEGRATED CIRCUIT DEVICE, WIRELESS COMMUNICATION UNIT AND METHOD OF MANUFACTURE THEREFOR

Номер патента: US20130189937A1. Автор: Gauthier Laurent. Владелец: Freescale Semiconductor, Inc.. Дата публикации: 2013-07-25.

INTEGRATED CIRCUIT FOR SELF-INTERFERENCE CANCELLATION AND METHOD OF PERFORMING FULL-DUPLEX RADIO COMMUNICATION

Номер патента: US20210050878A1. Автор: Shekhar Sudip,El Sayed Ahmed. Владелец: . Дата публикации: 2021-02-18.

INTEGRATED CIRCUITS HAVING SELF-CALIBRATING OSCILLATORS, AND METHODS OF OPERATING THE SAME

Номер патента: US20200159278A1. Автор: Pereira Angelo William,Manohar Sujan Kundapur,Korkmaz Pinar. Владелец: . Дата публикации: 2020-05-21.

PFC CONTROL CIRCUIT FOR A BOOST CONVERTER, RELATED INTEGRATED CIRCUIT, BOOST CONVERTER, POWER SUPPLY AND METHOD

Номер патента: US20210226527A1. Автор: Adragna Claudio,Sammartano Marco,Tumminaro Salvatore,Pasqua Alfio. Владелец: . Дата публикации: 2021-07-22.

SEMICONDUCTOR INTEGRATED CIRCUIT ADAPTED TO SCAN TESTING, AND METHOD OF DESIGNING THE SAME

Номер патента: US20190267973A1. Автор: NAKAKO Takahisa. Владелец: . Дата публикации: 2019-08-29.

INTEGRATED CIRCUIT FOR PHYSICALLY UNCLONABLE FUNCTION AND METHOD OF OPERATING THE SAME

Номер патента: US20210399905A1. Автор: Kwak Sung Ung. Владелец: . Дата публикации: 2021-12-23.

Integrated Circuit Device Body Bias Circuits and Methods

Номер патента: US20150318026A1. Автор: Clark Lawrence T.,Kidd David A.,Kuo Augustine. Владелец: . Дата публикации: 2015-11-05.

Audio amplifier, audio output circuit, integrated circuit for audio, electronic device, and method for amplifying audio signal

Номер патента: US20150326192A1. Автор: Takeshi Onodera. Владелец: ROHM CO LTD. Дата публикации: 2015-11-12.

INTEGRATED CIRCUIT FOR SELF-INTERFERENCE CANCELLATION AND METHOD OF PERFORMING FULL-DUPLEX RADIO COMMUNICATION

Номер патента: US20180358997A1. Автор: Shekhar Sudip,El Sayed Ahmed. Владелец: . Дата публикации: 2018-12-13.

Semiconductor integrated circuit adapted to scan testing, and method of designing the same

Номер патента: US11005458B2. Автор: Takahisa Nakako. Владелец: Synaptics Inc. Дата публикации: 2021-05-11.

Integrated circuit including field effect transistor and method of manufacture

Номер патента: AU2003248770A8. Автор: Jie Zhang,Steven Scheifers,Daniel Gamota,Paul Brazis,Jerzy Wielgus,Abhijit Roy Chowdhuri,Krishna Kalanasundaram. Владелец: Motorola Inc. Дата публикации: 2004-01-23.

Integrated circuit device, wireless communication unit and method of manufacture therefor

Номер патента: CN103155426A. Автор: 劳伦特·戈捷. Владелец: FREESCALE SEMICONDUCTOR INC. Дата публикации: 2013-06-12.

Integrated circuit including field effect transistor and method of manufacture

Номер патента: WO2004006633A3. Автор: Jie Zhang,Steven Scheifers,Daniel Gamota,Paul Brazis,Jerzy Wielgus,Abhijit Roy Chowdhuri,Krishna Kalanasundaram. Владелец: Motorola Inc. Дата публикации: 2004-06-17.

Printed circuit board, ball grid array package and wiring method of printed circuit board

Номер патента: US09629241B2. Автор: Yue Wu. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2017-04-18.

Clock signal generation apparatus, apparatus for generating a clock signal using an information recording medium, integrated circuit, clock signal generation method, and method for generating a clock signal using an information recording medium

Номер патента: TW200523883A. Автор: Takeshi Nakajima,Makoto Usui,Kohei Nakata,Toyoji Gushima. Владелец: Matsushita Electric Ind Co Ltd. Дата публикации: 2005-07-16.

Integrated circuit comprising voltage modulation circuitry and method therefor

Номер патента: US20120098510A1. Автор: Franck Galtie,Eric Rolland,Philippe Goyhenetche. Владелец: FREESCALE SEMICONDUCTOR INC. Дата публикации: 2012-04-26.

Rf transmitter, integrated circuit device, wireless communication unit and method therefor

Номер патента: US20120269292A1. Автор: Hua Wang,Chun-Hsien Peng,Paul Cheng Po Liang,Ho-Chi Huang. Владелец: Mediatek Singapore Pte Ltd. Дата публикации: 2012-10-25.

RF TRANSMITTER, INTEGRATED CIRCUIT DEVICE, WIRELESS COMMUNICATION UNIT AND METHOD THEREFOR

Номер патента: US20140177755A1. Автор: Wang Hua,Son Sang Won,Liang Paul Cheng Po,LU Chao. Владелец: MEDIATEK SINGAPORE PTE. LTD.. Дата публикации: 2014-06-26.

MODULAR CONNECTIVITY AND ENERGY SYSTEMS WITH INTEGRATED CIRCUIT BOARDS AND ASSOCIATED DEVICES AND METHODS

Номер патента: US20200091724A1. Автор: Jensen Christian,Freni Michel Jacques,Jagtap Anubhav,Saidane Hatem,Sara Poonam B.. Владелец: . Дата публикации: 2020-03-19.

SYSTEMS FOR REDUCING MAGNETIC COUPLING IN INTEGRATED CIRCUITS (ICS), AND RELATED COMPONENTS AND METHODS

Номер патента: US20140354372A1. Автор: Zuo Chengjie,Yun Changhan,Velez Mario Francisco,Kim Jonghae,Nowak Matthew M.,Lan Je-Hsiung,Kim Daeik D.,Mikulka Robert P.. Владелец: QUALCOMM INCORPORATED. Дата публикации: 2014-12-04.

INTEGRATED CIRCUIT-BASED WIRELESS CHARGING SYSTEM AND METHOD

Номер патента: US20180294671A1. Автор: Li Jie,PAN Siming,HE Dawei,LI Tun. Владелец: . Дата публикации: 2018-10-11.

Integrated circuit with channel estimation module and method therefor

Номер патента: CN102449970B. Автор: 文森特·马丁尼兹. Владелец: FREESCALE SEMICONDUCTOR INC. Дата публикации: 2015-06-17.

Integrated circuit output pad driving apparatus and method

Номер патента: KR960039639A. Автор: 이. 데이어 빌리,에이. 린 스코트. Владелец: 레이몬드 에이. 젠스키. Дата публикации: 1996-11-25.

Semiconductor integrated circuit device, power supply device, and control method of power supply device

Номер патента: JP5979955B2. Автор: 健一長田,鳴劉,樹生中川,長田　健一. Владелец: Renesas Electronics Corp. Дата публикации: 2016-08-31.

Integrated circuit comprising error correction logic, and a method of error correction

Номер патента: US8296621B2. Автор: Mathieu Villion. Владелец: FREESCALE SEMICONDUCTOR INC. Дата публикации: 2012-10-23.

Integrated circuit having an FM demodulator and method therefor

Номер патента: US6646500B2. Автор: Junsong Li,Jon D. Hendrix,Raghu G. Raj. Владелец: Motorola Inc. Дата публикации: 2003-11-11.

Voice, data and RF integrated circuit with multiple modulation modes and methods for use therewith

Номер патента: US7684767B2. Автор: Ahmadreza (Reza) Rofougaran. Владелец: Broadcom Corp. Дата публикации: 2010-03-23.

Pyramid filter and integrated circuit comprising the same, image processing system, method of producing filtered state variable signal sample stream, and computer readable storage medium

Номер патента: TWI224754B. Автор: Tinku Acharya. Владелец: Intel Corp. Дата публикации: 2004-12-01.

Inductively coupled integrated circuit with near field communication and methods for use therewith

Номер патента: US20090218657A1. Автор: Ahmadreza (Reza) Rofougaran. Владелец: Broadcom Corp. Дата публикации: 2009-09-03.

Integrated circuit for load device detection and method for detecting load current of voltage regulator

Номер патента: TWI760956B. Автор: 吳昌憲,山度巴爾. Владелец: 新唐科技股份有限公司. Дата публикации: 2022-04-11.

Integrated circuit having boosted array voltage and method therefor

Номер патента: US8031549B2. Автор: Prashant U. Kenkare,Troy L. Cooper. Владелец: FREESCALE SEMICONDUCTOR INC. Дата публикации: 2011-10-04.

INTEGRATED CIRCUIT HAVING ANCHORED MESH VOLTAGE AND METHOD FOR THE SAME

Номер патента: BRPI0918467A8. Автор: U Kenkare Prashant,L Cooper Troy. Владелец: NXP USA Inc. Дата публикации: 2017-10-10.

Voice, data and rf integrated circuit with multiple modulation modes and methods for use therewith

Номер патента: US20100136934A1. Автор: Ahmadreza Reza Rofougaran. Владелец: Broadcom Corp. Дата публикации: 2010-06-03.

Integrated circuit and memory protection apparatus and methods thereof

Номер патента: TW201030517A. Автор: Morgan Du. Владелец: Nuvoton Technology Corp. Дата публикации: 2010-08-16.

Integrated circuit comprising error correction logic, and a method of error correction

Номер патента: EP2145391A1. Автор: Mathieu Villion. Владелец: FREESCALE SEMICONDUCTOR INC. Дата публикации: 2010-01-20.

Integrated circuit having boosted array voltage and method therefor

Номер патента: TW201027551A. Автор: Prashant U Kenkare,Troy L Cooper. Владелец: FREESCALE SEMICONDUCTOR INC. Дата публикации: 2010-07-16.

Rf polar transmitter and integrated circuit with programmable baseband filtering and methods for use therewith

Номер патента: US20090203327A1. Автор: Ahmadreza (Reza) Rofougaran. Владелец: Broadcom Corp. Дата публикации: 2009-08-13.

Rf polar transmitter and integrated circuit with programmable filter module and methods for use therewith

Номер патента: US20090202019A1. Автор: Ahmadreza (Reza) Rofougaran. Владелец: Broadcom Corp. Дата публикации: 2009-08-13.

RF transmitter, integrated circuit device, wireless communication unit and method therefor

Номер патента: TW201244386A. Автор: Hua Wang,Chao Lu,Sang Won Son,Chun-Hsien Peng,Paul Cheng-Po Liang,Julia Liu. Владелец: Mediatek Singapore Pte Ltd. Дата публикации: 2012-11-01.

Rf amplifier module, integrated circuit device, wireless communication unit and method therefor

Номер патента: US20130009710A1. Автор: Bernard Mark Tenbroek,Hongli Zhang. Владелец: Mediatek Singapore Pte Ltd. Дата публикации: 2013-01-10.

Systems for reducing magnetic coupling in integrated circuits (ics), and related components and methods

Номер патента: EP3005562B1. Автор: Je-Hsiung Lan,Changhan Yun,Chengjie Zuo,Jonghae Kim,Mario Francisco Velez,Daeik D. KIM,Robert P. MIKULKA,Matthew M. Nowak. Владелец: Qualcomm Inc. Дата публикации: 2017-07-19.

Focus detection apparatus and method, method of controlling focus detection apparatus, and image capturing apparatus

Номер патента: US09615017B2. Автор: Kengo Takeuchi. Владелец: Canon Inc. Дата публикации: 2017-04-04.

Focus detection apparatus and method, method of controlling focus detection apparatus, and image capturing apparatus

Номер патента: US20140362279A1. Автор: Kengo Takeuchi. Владелец: Canon Inc. Дата публикации: 2014-12-11.

The method of laser package and the preparation method of display floater

Номер патента: CN104157795B. Автор: 王小虎,崔伟,洪瑞,藤野诚治. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2016-09-14.

Integrated circuits with programmable memory cells and methods for programming the same

Номер патента: US09799387B1. Автор: Eng Huat Toh,Kangho Lee,Kiok Boone Elgin Quek. Владелец: GLOBALFOUNDRIES SINGAPORE PTE LTD. Дата публикации: 2017-10-24.

A media player an integrated circuit for a media player and a method of producing both

Номер патента: WO2008004235A3. Автор: Amir Geva,Rafi Mosseri. Владелец: Musicpump Ltd. Дата публикации: 2009-04-09.

A media player an integrated circuit for a media player and a method of producing both

Номер патента: WO2008004235A2. Автор: Amir Geva,Rafi Mosseri. Владелец: Musicpump Ltd.. Дата публикации: 2008-01-10.

Timing controller, source driver, and display driver integrated circuit having improved test efficiency and method of operating display driving circuit

Номер патента: US09514713B2. Автор: Young-hun Lee,Young-Min Choi,Jae-Youl Lee,Dong-Myung Lee,Dong-Hoon Baek,Kil-Hoon Lee,Han-Su Pae. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-12-06.

Integrated circuit for switching loads, circuit arrangement comprising an integrated circuit and a connected load, and method for operating such a circuit arrangement

Номер патента: US20140320160A1. Автор: Harald Schmauss,Johann Falter,Gunther Wolfarth,Marco Well,Franz Laberer,Sergiu Muresan,Cristian Theil. Владелец: Continental Automotive GmbH. Дата публикации: 2014-10-30.

Integrated circuit for switching loads, circuit arrangement comprising an integrated circuit and a connected load, and method for operating such a circuit arrangement

Номер патента: US09435857B2. Автор: Harald Schmauss,Johann Falter,Gunther Wolfarth,Marco Well,Franz Laberer,Sergiu Muresan,Cristian Theil. Владелец: Continental Automotive GmbH. Дата публикации: 2016-09-06.

Design method of semiconductor integrated circuit device, a program, and the support method of measurement evaluation

Номер патента: US20070079263A1. Автор: Yasuyoshi Noguchi,Kei Mohara. Владелец: Renesas Technology Corp. Дата публикации: 2007-04-05.

Integrated circuit with CO2 sensor, composition and manufacturing method of such an IC

Номер патента: US09683099B2. Автор: Rafael Sablong,Aurelie Humbert,Cornelis Bastiaansen,Dimitri Soccol,Jan KOLIJN,Dirk Gravesteijn,Bjorn Tuerlings. Владелец: ams International AG. Дата публикации: 2017-06-20.

Integrated circuit chip with repeater flops and method for automated design of same

Номер патента: WO2008021489A3. Автор: Bharat Patel,Stuart A Taylor,Victor Ma. Владелец: Victor Ma. Дата публикации: 2008-05-29.

Touch sensing integrated circuit system, touch sensing system, and method for writing firmware

Номер патента: US20210182076A1. Автор: Gyu Chul Lee. Владелец: Silicon Works Co Ltd. Дата публикации: 2021-06-17.

Touch sensing integrated circuit system, touch sensing system, and method for writing firmware

Номер патента: US20230251868A1. Автор: Gyu Chul Lee. Владелец: Silicon Works Co Ltd. Дата публикации: 2023-08-10.

Touch sensing integrated circuit system, touch sensing system, and method for writing firmware

Номер патента: US12118364B2. Автор: Gyu Chul Lee. Владелец: Silicon Works Co Ltd. Дата публикации: 2024-10-15.

Integrated circuit device, voltage regulation circuitry and method for regulating a voltage supply signal

Номер патента: US09429966B2. Автор: Michael Priel,Dan Kuzmin,Anton Rozen. Владелец: FREESCALE SEMICONDUCTOR INC. Дата публикации: 2016-08-30.

Integrated circuit, in particular integrated memory, and methods for operating an integrated circuit

Номер патента: US20040240262A1. Автор: Stephan Schroder,Koen Van Der Zanden,Evangelos Stavrou,Manfred Pröll. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2004-12-02.

Photonic integrated circuit having redundant light path and method of using

Номер патента: US11815721B2. Автор: Weiwei SONG,Stefan Rusu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-14.

Integrated circuit, and data processing apparatus and method

Номер патента: EP4322016A1. Автор: Shan Lu,Jian Wang,Yimin Chen,Junmou Zhang,Chuang Zhang,Yuanlin Cheng. Владелец: Lemon Inc. Дата публикации: 2024-02-14.

On-chip integrated circuit, and data processing apparatus and method

Номер патента: EP4322017A1. Автор: Shan Lu,Jian Wang,Yimin Chen,Junmou Zhang,Chuang Zhang,Yuanlin Cheng. Владелец: Lemon Inc. Дата публикации: 2024-02-14.

Integrated circuit including data synchronization apparatus and method

Номер патента: US20080101238A1. Автор: Stefan Dietrich,Rex Kho. Владелец: Qimonda AG. Дата публикации: 2008-05-01.

Semiconductor integrated circuit for communication, storage apparatus, and method for managing failure in storage apparatus

Номер патента: US20170017540A1. Автор: Masahiro Ide,Shinichi Kasahara,Osamu Torigoe,Hiroyuki Kawato. Владелец: HITACHI LTD. Дата публикации: 2017-01-19.

Semiconductor integrated circuit device having clock buffers and method for arranging the clock buffers on the device

Номер патента: US7685552B2. Автор: Hiroshige Fujii,Fujio Ishihara,Toshihiko Himeno,Ryubi Okuda. Владелец: Toshiba Corp. Дата публикации: 2010-03-23.

Biocompatible hydrogels, systems including the hydrogels, and methods of using and forming same

Номер патента: WO2016100355A1. Автор: Amir H. TORBATI,Christopher Bowman,Naresh MANDAVA,Malik Y. Kahook,Devatha P. Nair,Saikripa RADHAKRISHNAN,Srinidhi RADHAKRISHNAN. Владелец: The Regents of the University of Colorado, a body corporate. Дата публикации: 2016-06-23.

Reverse engineering data analysis system, and integrated circuit component data processing tool and method thereof

Номер патента: US20210042902A1. Автор: Michael Green. Владелец: TechInsights Inc. Дата публикации: 2021-02-11.

Integrated circuit facilitating subsequent failure analysis and methods useful in conjunction therewith

Номер патента: US20220066884A1. Автор: Ilan Margalit. Владелец: Nuvoton Technology Corp. Дата публикации: 2022-03-03.

Versions of carbon fibre package and versions of methods of winding said package

Номер патента: RU2409511C2. Автор: Такаюки КИРИЯМА,Норихито МАКИ. Владелец: Мицубиси Рэйон Ко., Лтд.. Дата публикации: 2011-01-20.

System-on-a-chip integrated circuit having time code receiver and method of operation thereof

Номер патента: WO2013032644A2. Автор: Thomas Jung,Oren E. Eliezer. Владелец: Xw, Llc Dba Xtendwave. Дата публикации: 2013-03-07.

Biomarker sensor array and circuit and methods of using and forming same

Номер патента: EP2973456A2. Автор: Bharath Takulapalli. Владелец: Individual. Дата публикации: 2016-01-20.

Integrated circuit package and method

Номер патента: US09527728B2. Автор: Benjamin Michael Sutton,Matthew David Romig,Marie-Solange Anne Milleron. Владелец: Texas Instruments Inc. Дата публикации: 2016-12-27.

Methods and apparatus to mitigate hotspots in integrated circuit packages using gimbaling nozzles and jet vectoring impingement

Номер патента: US20240276675A1. Автор: Patrick L. Connor,Prabhakar SUBRAHMANYAM,Mark Lawrence Bianco,Vishnu Prasadh Sugumar,Ying Feng Pang. Владелец: Intel Corp. Дата публикации: 2024-08-15.

Integrated circuit package, system comprising printed circuit board and integrated circuit package, method of soldering integrated circuit package to printed circuit board

Номер патента: WO2024155292A1. Автор: Zhiyang Wang,Bianca Kwok,Benson Tu,Adrian Ocampo. Владелец: MICROCHIP TECHNOLOGY INCORPORATED. Дата публикации: 2024-07-25.

Methods of forming magnetoresistive devices and integrated circuits

Номер патента: US12075630B2. Автор: THOMAS Andre,Sanjeev Aggarwal,Sarin A. Deshpande,Kerry Joseph NAGEL. Владелец: Everspin Technologies Inc. Дата публикации: 2024-08-27.

Methods of forming acoustic resonator device wafers integrated with electronic semiconductor switching device wafers using a wafer transfer process and related structures

Номер патента: US20240196753A1. Автор: Daeho Kim,Ramakrishna Vetury,Abhay Saranswarup Kochhar,Kamran Cheema. Владелец: Akoustis Inc. Дата публикации: 2024-06-13.

Millimeter wave monolithic integrated circuits and methods of forming such integrated circuits

Номер патента: EP2364524A1. Автор: Kenneth W. Brown,Andrew K. Brown. Владелец: Raytheon Co. Дата публикации: 2011-09-14.

Millimeter wave monolithic integrated circuits and methods of forming such integrated circuits

Номер патента: WO2010053554A1. Автор: Kenneth W. Brown,Andrew K. Brown. Владелец: Raytheon Company. Дата публикации: 2010-05-14.

Semiconductor device having reduced leakage and method of operating the same

Номер патента: US20020181291A1. Автор: Shi-Tron Lin,Wei-Fan Chen,Chen-Hsin Lien. Владелец: Winbond Electronics Corp. Дата публикации: 2002-12-05.

System and method for modeling i/o simultaneous switching noise

Номер патента: US20100005435A1. Автор: Charles S. Chiu,Erik Breiland,Prince George. Владелец: Individual. Дата публикации: 2010-01-07.

Data transfer control device, integrated circuit of same, data transfer control method of same, data transfer completion notification device, integrated circuit of same, data transfer completion notification method of same, and data transfer control system

Номер патента: US20120233372A1. Автор: Satoru Kuriki,Masaaki Harada,Hideki Taniguchi,Yuusaku Ohta,Satomi Amano. Владелец: Panasonic Corp. Дата публикации: 2012-09-13.

Apparatuses and methods to perform post package trim

Номер патента: US09741403B2. Автор: Jeffrey P. Wright,Alan J. Wilson. Владелец: Micron Technology Inc. Дата публикации: 2017-08-22.

Semiconductor chip, semiconductor integrated circuit including the semiconductor chip, semiconductor system including the semiconductor integrated circuit and method of driving the semiconductor system

Номер патента: US9177625B2. Автор: Jae-Bum Ko. Владелец: SK hynix Inc. Дата публикации: 2015-11-03.

Integrated circuit having a bus network, and method for the integrated circuit

Номер патента: US09665514B2. Автор: Ramamoorthy Guru Prasadh. Владелец: ARM LTD. Дата публикации: 2017-05-30.

Integrated circuit with synchronous and non-clocked intelligent logic having a microcontroller unit and method of operation therefor

Номер патента: WO2008050285A3. Автор: Carl Culshaw,Ross A Mitchell. Владелец: Ross A Mitchell. Дата публикации: 2008-11-06.

Programmed value determining circuit, semiconductor integrated circuit device including the same, and method for determining programmed value

Номер патента: US20030043652A1. Автор: Hiroyuki Yamauchi. Владелец: Matsushita Electric Industrial Co Ltd. Дата публикации: 2003-03-06.

Interface for communication between circuit blocks of an integrated circuit, and associated apparatuses, systems, and methods

Номер патента: US09594413B2. Автор: Ivan Herrera Mejia,Zeev Offen. Владелец: Intel Corp. Дата публикации: 2017-03-14.

Integrated circuit with test-operation-mode and method to test a plurality of such circuits

Номер патента: TW523597B. Автор: Michael Sommer,Thilo Marx,Stefan Dietrich,Patrick Heyne,Sabine Schoeniger. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2003-03-11.

INTEGRATED CIRCUIT PACKAGE WITH SENSOR AND METHOD OF MAKING

Номер патента: US20160347607A1. Автор: Shibuya Makoto,Nakanishi Noboru,Nguyen Luu. Владелец: . Дата публикации: 2016-12-01.

Optical integrated circuit with encapsulated edge coupler

Номер патента: WO2023244113A1. Автор: Bradley William SNYDER,Adriano Ricardo DO NASCIMENTO JÚNIOR. Владелец: Phix B.V.. Дата публикации: 2023-12-21.

Optical integrated circuit with encapsulated edge coupler

Номер патента: NL2032178B1. Автор: William Snyder Bradley,Ricardo Do Nascimento Júnior Adriano. Владелец: Phix B V. Дата публикации: 2023-12-21.

Airbag package for an occupant restraining system of a motor vehicle, occupant restraining system, and method for producing such an airbag package

Номер патента: US20150130167A1. Автор: Stefan Bachmann,Dieter Rumpf,Stefan Sapountzis,Michael Kunkel,Klaus Freudenberger,Stefan Hepp,Timm Herold. Владелец: TRW Automotive Safety Systems GmbH. Дата публикации: 2015-05-14.

Integrated circuit with design for testability and method for designing the same

Номер патента: TW571111B. Автор: Hideo Fujiwara,Toshimitsu Masuzawa,Satoshi Ohtake. Владелец: Semiconductor Tech Acad Res Ct. Дата публикации: 2004-01-11.

Metal packaging liquid or aerosol jet coating compositions, coated substrates, packaging, and methods

Номер патента: US20240287316A1. Автор: Charles I. Skillman,Boxin Tang. Владелец: SWIMC LLC. Дата публикации: 2024-08-29.

Integrated circuit, and data processing apparatus and method

Номер патента: EP4322016A4. Автор: Shan Lu,Jian Wang,Yimin Chen,Junmou Zhang,Chuang Zhang,Yuanlin Cheng. Владелец: Lemon Inc. Дата публикации: 2024-10-09.

On-chip integrated circuit, and data processing apparatus and method

Номер патента: EP4322017A4. Автор: Shan Lu,Jian Wang,Yimin Chen,Junmou Zhang,Chuang Zhang,Yuanlin Cheng. Владелец: Lemon Inc. Дата публикации: 2024-10-09.

Signal processing system and integrated circuit comprising a prefetch module and method therefor

Номер патента: US09652413B2. Автор: Joseph Circello,Mark Maiolani,Alistair Robertson. Владелец: NXP USA Inc. Дата публикации: 2017-05-16.

SYSTEM FOR DESIGNING INTEGRATED CIRCUIT USING EXTRACTED MODEL PARAMETER AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT USING THE SAME

Номер патента: US20200004911A1. Автор: KIM Yo-han. Владелец: Samsung Electronics Co., Ltd. Дата публикации: 2020-01-02.

INTEGRATED CIRCUIT FOR SWITCHING LOADS, CIRCUIT ARRANGEMENT COMPRISING AN INTEGRATED CIRCUIT AND A CONNECTED LOAD, AND METHOD FOR OPERATING SUCH A CIRCUIT ARRANGEMENT

Номер патента: US20140320160A1. Автор: Schmauss Harald,WOLFARTH GUNTHER,Muresan Sergiu,Well Marco,Falter Johann,Laberer Franz,Theil Cristian. Владелец: Continental Automotive GmbH. Дата публикации: 2014-10-30.

INTEGRATED CIRCUIT HIERARCHICAL DESIGN TOOL APPARATUS AND METHOD OF HIERARCHICALLY DESIGNING AN INTEGRATED CIRCUIT

Номер патента: US20150339427A1. Автор: BERKOVITZ ASHER,BEN-PORAT INBAR,NEEMAN YOSSY. Владелец: Freescale Semiconductor, Inc.. Дата публикации: 2015-11-26.

Integrated circuit hierarchical design tool apparatus and method of hierarchically designing an integrated circuit

Номер патента: WO2014106779A1. Автор: Yossy Neeman,Asher BERKOVITZ,Inbar BEN-PORAT. Владелец: Freescale Semiconductor, Inc.. Дата публикации: 2014-07-10.

Integrated circuit hierarchical design tool apparatus and method of hierarchically designing an integrated circuit

Номер патента: US9792399B2. Автор: Yossy Neeman,Asher BERKOVITZ,Inbar BEN-PORAT. Владелец: NXP USA Inc. Дата публикации: 2017-10-17.

Nonvolatile memory, semiconductor integrated circuit having therein the nonvolatile memory, the method of writing data to the nonvolatile memory and semiconductor device containing the nonvolatile memory array

Номер патента: TW574702B. Автор: Toshihiro Tanaka,Yutaka Shinagawa,Kazufumi Suzukawa,Takashi Yamaki,Masamichi Fujito. Владелец: Hitachi Ulsi Sys Co Ltd. Дата публикации: 2004-02-01.

Semiconductor memory device, semiconductor integrated circuit system using the same, and control method of semiconductor memory device

Номер патента: TWI309416B. Автор: Toshiya Uchida. Владелец: Fujitsu Microelectronics Ltd. Дата публикации: 2009-05-01.

Data transfer control device, integrated circuit of same, data transfer control method of same, data transfer completion notification device, integrated circuit of same, data transfer completion notification method of same, and data transfer control system

Semiconductor integrated circuit with delay test circuit, and method for testing semiconductor integrated circuit

Номер патента: US7613971B2. Автор: Toshiharu Asaka. Владелец: NEC Electronics Corp. Дата публикации: 2009-11-03.

Apparatuses and methods to perform post package trim

Номер патента: EP3218903A1. Автор: Jeffrey P. Wright,Alan J. Wilson. Владелец: Micron Technology Inc. Дата публикации: 2017-09-20.

Apparatuses and methods to perform post package trim

Номер патента: US20160133310A1. Автор: Jeffrey P. Wright,Alan J. Wilson. Владелец: US Bank NA. Дата публикации: 2016-05-12.

INTEGRATED CIRCUIT HAVING A BUS NETWORK, AND METHOD FOR THE INTEGRATED CIRCUIT

Номер патента: US20140032808A1. Автор: Prasadh Ramamoorthy Guru. Владелец: ARM LIMITED. Дата публикации: 2014-01-30.

THREE-DIMENSIONAL (3D) MEMORY CELL SEPARATION AMONG 3D INTEGRATED CIRCUIT (IC) TIERS, AND RELATED 3D INTEGRATED CIRCUITS (3DICS), 3DIC PROCESSOR CORES, AND METHODS

Номер патента: US20140269022A1. Автор: Xie Jing,Du Yang. Владелец: . Дата публикации: 2014-09-18.

Apparatus for testing photonic integrated circuits, inspection system including apparatus, and method for testing photonic integrated circuits

Номер патента: JP7141411B2. Автор: フィリップヒューブナー,シュテファンリヒター. Владелец: カール・ツァイス・エスエムティー・ゲーエムベーハー. Дата публикации: 2022-09-22.

Integrated circuit and the computing system and method for integrated design circuit

Номер патента: CN108205602A. Автор: 张铭洙,元孝植,朴炫洙,曹多演. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-06-26.

Integrated circuit device including memory array, and method for power gating in integrated circuit device in which memory with sense amplifier is incorporated

Номер патента: JP2005085454A. Автор: キム・シィ・ハーディー,C Hardy Kim. Владелец: United Memories Inc. Дата публикации: 2005-03-31.

Abnormal condition detection circuit, integrated circuit card having the circuit, and method of operating CPU

Номер патента: US20070018003A1. Автор: Ji-Hoon Jeong. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2007-01-25.

Integrated-circuit card having contact area and method for manufacturing such integrated- circuit card

Номер патента: RU2215325C2. Автор: Петер Штампка,Тис Янчек. Владелец: СИМЕНС АКЦИЕНГЕЗЕЛЛЬШАФТ. Дата публикации: 2003-10-27.

Timing Controller, Source Driver, and Display Driver Integrated Circuit Having Improved Test Efficiency and Method of Operating Display Driving Circuit

Номер патента: US20150154943A1. Автор: Choi Young-min,Lee Young-Hun,Baek Dong-Hoon,Lee Jae-Youl,Lee Dong-Myung,Pae Han-Su,LEE KIL-HOON. Владелец: . Дата публикации: 2015-06-04.

Method of extracting a complex of biologically active substances from biomass of root cultures of potentilla alba l_ in vitro

Номер патента: RU2724487C1. Автор: Александр Юрьевич Просеков,Любовь Сергеевна Дышлюк,Ирина Сергеевна Милентьева,Ольга Олеговна Бабич,Людмила Константиновна Асякина,Александра Васильевна Заушинцена. Владелец: федеральное государственное бюджетное образовательное учреждение высшего образования "Кемеровский государственный университет" (КемГУ). Дата публикации: 2020-06-23.

Semiconductor integrated circuit, card comprising the same, and operating method of semiconductor integrated circuit

Номер патента: US20080315995A1. Автор: Yuichi Okuda. Владелец: Renesas Technology Corp. Дата публикации: 2008-12-25.

Method of measuring flatness of metal article and corresponding device

Номер патента: RU2717741C2. Автор: Доминик ТЕЛЬЕ,Бастьен БУБИ,Флориан ТУРШЕ. Владелец: Прайметалз Текнолоджиз Франс Сас. Дата публикации: 2020-03-25.

System and method for modeling i/o simultaneous switching noise

Номер патента: US20120204137A1. Автор: Charles S. Chiu,Erik Breiland,Prince George. Владелец: International Business Machines Corp. Дата публикации: 2012-08-09.

INTEGRATED CIRCUIT OF INPUT / OUTPUT SENALIZATION AND CONFIGURATION METHOD OF SUCH CIRCUIT

Номер патента: AR020659A1. Автор: . Владелец: Micro Motion Inc. Дата публикации: 2002-05-22.

Display driver integrated circuit with operating frequency adjustment and method of adjusting operating frequency

Номер патента: US10796661B2. Автор: Sang Su Park. Владелец: MagnaChip Semiconductor Ltd. Дата публикации: 2020-10-06.

Display driver integrated circuit with operating frequency adjustment and method of adjusting operating frequency

Номер патента: US20200118517A1. Автор: Sang Su Park. Владелец: MagnaChip Semiconductor Ltd. Дата публикации: 2020-04-16.

SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE, POWER SUPPLY DEVICE, AND METHOD OF CONTROLLING POWER SUPPLY DEVICE

Номер патента: US20130278059A1. Автор: Liu Ming,NAKAGAWA Tatsuo,OSADA Kenichi. Владелец: RENESAS ELECTRONICS CORPORATION. Дата публикации: 2013-10-24.

LEAKAGE CURRENT DETECTION DEVICE, INTEGRATED CIRCUIT DEVICE HAVING THE SAME, AND METHOD OF DETECTING LEAKAGE CURRENT IN NONVOLATILE MEMORY DEVICE

Номер патента: US20160018454A1. Автор: JEON Byung-gil,KWON OH-SUK,SEO SUNG-WHAN,KIM DOO-GON. Владелец: . Дата публикации: 2016-01-21.

Integrated circuit contact test apparatus with and method of construction

Номер патента: US20210018533A1. Автор: Jeffrey Sherry,Joel Erdman. Владелец: Johnstech International Corp. Дата публикации: 2021-01-21.

TOUCH INTEGRATED CIRCUIT, AND TOUCH DISPLAY DEVICE AND METHOD OF DRIVING THE SAME

Номер патента: US20170031505A1. Автор: KIM Hui,SONG Hongsung,KWON Soonho. Владелец: . Дата публикации: 2017-02-02.

TOUCH INTEGRATED CIRCUIT, AND TOUCH DISPLAY DEVICE AND METHOD OF DRIVING THE SAME

Номер патента: US20170031523A1. Автор: KIM Hui,SONG Hongsung,SEO ByungHyun. Владелец: . Дата публикации: 2017-02-02.

DISPLAY DRIVER INTEGRATED CIRCUIT WITH OPERATING FREQUENCY ADJUSTMENT AND METHOD OF ADJUSTING OPERATING FREQUENCY

Номер патента: US20200118517A1. Автор: Park Sang Su. Владелец: MAGNACHIP SEMICONDUCTOR, LTD.. Дата публикации: 2020-04-16.

INTEGRATED CIRCUIT INCLUDING LOAD STANDARD CELL AND METHOD OF DESIGNING THE SAME

Номер патента: US20190197214A1. Автор: Choi Jong-Ryun,CHAE KWAN-YEOB. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2019-06-27.

DISPLAY CONTROLLER FOR IMPROVING DISPLAY NOISE, SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE INCLUDING THE SAME AND METHOD OF OPERATING THE DISPLAY CONTROLLER

Номер патента: US20160217724A1. Автор: Kim Bo Young. Владелец: . Дата публикации: 2016-07-28.

TOUCH PROCESSOR, TOUCH DISPLAY DRIVER INTEGRATED CIRCUIT CHIP INCLUDING TOUCH PROCESSOR, AND METHOD OF OPERATING TOUCH PROCESSOR

Номер патента: US20170212636A1. Автор: CHOI Yoon-kyung,Kim Cha-Dong,BYUN San-Ho,Kim Jin-Bong,KIM Min-Sung,CHUNG Hwi-taek,KIM Eung-Man. Владелец: . Дата публикации: 2017-07-27.

BUS INTERFACE DEVICE, SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE INCLUDING THE SAME, AND METHOD OF OPERATING THE SAME

Номер патента: US20160283416A1. Автор: Lim Eui Cheol,Kim Seok Hoon,HA Jin Seok,Jung Jin Yong. Владелец: . Дата публикации: 2016-09-29.

Integrated Circuit Contactor For Testing ICs And Method Of Construction

Номер патента: US20200363451A1. Автор: Johnson David,Nelson John,Andres Michael,Sherry Jeffrey,Perez Ranauld. Владелец: . Дата публикации: 2020-11-19.

Touch Integrated Circuit, And Touch Display Device And Method Of Driving The Same

Номер патента: KR102349822B1. Автор: 김휘,송홍성,서병현. Владелец: 엘지디스플레이 주식회사. Дата публикации: 2022-01-11.

Method of sterilisation

Номер патента: RU2542442C2. Автор: Джон М. РОВИСОН,Шибу АБРАХАМ,Чарльз Дж. ЛИМБЕРНЕР,Майкл Дж. ДИДЖЕРОНИМО. Владелец: ПероксиКем, ЭлЭлСи. Дата публикации: 2015-02-20.

Integrated circuit contactor for testing ICs and method of construction

Номер патента: US11209458B2. Автор: John Nelson,David Johnson,Ranauld Perez,Jeffrey Sherry,Michael Andres. Владелец: Johnstech International Corp. Дата публикации: 2021-12-28.

Very large scale integrated circuit subdivided into isochronous regions and methods for the machine-aided design and testing of such a circuit

Номер патента: GB2148029A. Автор: Lambertus Spaanenburg,Peter Bertil Duin,Roberto Woudsma,Der Poel Arie Antonie Van. Владелец: Philips Gloeilampenfabrieken NV. Дата публикации: 1985-05-22.

Integrated circuit having microelectromechanical system device and method of fabricating the same

Номер патента: US8642986B2. Автор: Min Chen,Tzung-Han Tan,Bang-Chiang Lan,Ming-I Wang,Chien-Hsin Huang,Meng-Jia Lin,Hui-Min Wu,Tzung-I Su,Chao-An Su. Владелец: United Microelectronics Corp. Дата публикации: 2014-02-04.

INTEGRATED CIRCUIT CARD WITH GRATIFICATION COUNTER AND METHOD OF COUNTING GRATIFICATIONS

Номер патента: FR2761791B1. Автор: Mounji Methlouti. Владелец: Gemplus SA. Дата публикации: 2000-05-12.

Reserve winding of yarn on a tube of a cross-wound bobbin and method and appartus of forming same

Номер патента: US4878629A. Автор: Hans Grecksch,Josef Bertrams,Rene Bucken. Владелец: W Schlafhorst AG and Co. Дата публикации: 1989-11-07.

A kind of integrated circuit time parameter test circuit and method

Номер патента: CN108120919A. Автор: 周鹏,王东海,刘学涛,赵运坤. Владелец: Beijing Hua Feng Measurement And Control Technology Ltd By Share Ltd. Дата публикации: 2018-06-05.

Sense amplifier circuitry for integrated circuit having memory cell array, and method of operating same

Номер патента: WO2009030631A1. Автор: Philippe Graber. Владелец: Innovative Silicon ISi SA. Дата публикации: 2009-03-12.

System-on-a-chip integrated circuit having time code receiver and method of operation thereof

Номер патента: WO2013032644A3. Автор: Thomas Jung,Oren E. Eliezer. Владелец: Xw, Llc Dba Xtendwave. Дата публикации: 2013-05-02.

Bus interface device, semiconductor integrated circuit device including the same, and method of operating the same

Номер патента: US20160283416A1. Автор: Eui Cheol Lim,Seok Hoon Kim,Jin Yong Jung,Jin Seok Ha. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-09-29.

Woven fabric having a bulging zone and method and apparatus of forming same

Номер патента: US6000442A. Автор: Alexander Busgen. Владелец: Individual. Дата публикации: 1999-12-14.

Lithographic apparatus and device manufacturing method, an integrated circuit, a flat panel display, and a method of compensating for cupping

Номер патента: US20060203220A1. Автор: Arno Bleeker,Johannes Baselmans,Kars Troost,Neal Callan,Louis Markoya,Nicholas Eib. Владелец: LSI Logic Corp. Дата публикации: 2006-09-14.

Fusers, printing apparatuses and methods, and methods of fusing toner on media

Номер патента: US20100119267A1. Автор: David P. Van Bortel,Brendan H. Williamson,Brian J. McNamee. Владелец: Xerox Corp. Дата публикации: 2010-05-13.

A kind of integrated circuit by-passing signal self difference amplification method of sampling and system

Номер патента: CN110197086A. Автор: 李艳,张阳,李雄伟,王晓晗,宋世杰,谢方方,陈开颜,全厚德,马佳巍. Владелец: Army Engineering University of PLA. Дата публикации: 2019-09-03.

Dispensing capsule and method and apparatus of forming same

Номер патента: US20230365322A1. Автор: Stuart Gordon,Mark Appleford. Владелец: VARDEN PROCESS PTY LTD. Дата публикации: 2023-11-16.

Turkey product in a form ready for cooking and a method of cutting to form same

Номер патента: US4849245A. Автор: Robert H. Galbraith. Владелец: Cuddy Farms Inc. Дата публикации: 1989-07-18.

Cord stopper and methods for using and manufacturing the same

Номер патента: US12117066B2. Автор: David Roberts. Владелец: Individual. Дата публикации: 2024-10-15.

Inspection apparatus and methods, methods of manufacturing devices

Номер патента: US09753379B2. Автор: Henricus Petrus Maria Pellemans,Patrick Warnaar,Amandev SINGH. Владелец: ASML Netherlands BV. Дата публикации: 2017-09-05.

Signal processing system, integrated circuit comprising buffer control logic and method therefor

Номер патента: US20120131241A1. Автор: Joseph Circello,Mark Maiolani,Alistair Robertson. Владелец: FREESCALE SEMICONDUCTOR INC. Дата публикации: 2012-05-24.

Integrated Circuit Comprising a FRAM Memory and Method for Granting Read-Access to a FRAM Memory

Номер патента: US20130114324A1. Автор: Gerber Johannes,Rzehak Volker,Kuhn Rudiger,Arnold Matthias. Владелец: TEXAS INSTRUMENTS INCORPORATED. Дата публикации: 2013-05-09.

INTEGRATED CIRCUIT DEVICE, SIGNAL PROCESSING SYSTEM AND METHOD FOR PREFETCHING LINES OF DATA THEREFOR

Номер патента: US20130246695A1. Автор: Maiolani Mark,Robertson Alistair. Владелец: Freescale Semiconductor, Inc.. Дата публикации: 2013-09-19.

INTEGRATED CIRCUIT DEVICE, VOLTAGE REGULATION CIRCUITRY AND METHOD FOR REGULATING A VOLTAGE SUPPLY SIGNAL

Номер патента: US20130300386A1. Автор: Priel Michael,Rozen Anton,Kuzmin Dan. Владелец: Freescale Semiconductor. Inc.. Дата публикации: 2013-11-14.

INTEGRATED CIRCUIT DEVICE, POWER MANAGEMENT MODULE AND METHOD FOR PROVIDING POWER MANAGEMENT

Номер патента: US20130308409A1. Автор: Priel Michael,Kuzmin Dan,Sergey Sofer. Владелец: . Дата публикации: 2013-11-21.

SEMICONDUCTOR INTEGRATED CIRCUIT FOR COMMUNICATION, STORAGE APPARATUS, AND METHOD FOR MANAGING FAILURE IN STORAGE APPARATUS

Номер патента: US20170017540A1. Автор: Ide Masahiro,Kasahara Shinichi,KAWATO Hiroyuki,TORIGOE Osamu. Владелец: Hitachi, Ltd.. Дата публикации: 2017-01-19.

INTEGRATED CIRCUIT SPIKE CHECK PROBING APPARATUS AND METHOD

Номер патента: US20200033403A1. Автор: Bush William Joshua,Bhardwaj Neeraj,Shirazian Erfan,Sampath Madhusudan,Mason James Scott,Contractor Yazdi,Ramasamy Pavinkumar. Владелец: . Дата публикации: 2020-01-30.

INTEGRATED CIRCUIT FACILITATING SUBSEQUENT FAILURE ANALYSIS AND METHODS USEFUL IN CONJUNCTION THEREWITH

Номер патента: US20220066884A1. Автор: Margalit Ilan. Владелец: Nuvoton Technology Corporation. Дата публикации: 2022-03-03.

INTEGRATED CIRCUIT FOR DRIVING DISPLAY PANEL AND METHOD THEREOF

Номер патента: US20180075802A1. Автор: CHEN CHIEN-YU,Chang Chia-Wei,Lo Hsien-Wen,Liu I-Te. Владелец: NOVATEK MICROELECTRONICS CORP.. Дата публикации: 2018-03-15.

INTEGRATED CIRCUIT WITH CO2 SENSOR, COMPOSITION AND MANUFACTURING METHOD OF SUCH AN IC

Номер патента: US20150084100A1. Автор: SOCCOl Dimitri,Humbert Aurelie,Sablong Rafael,Tuerlings Bjorn,Bastiaansen Cornelis,Gravesteijn Dirk,Kolijn Jan. Владелец: . Дата публикации: 2015-03-26.

OPTICAL MODULATOR MODULE, INTEGRATED CIRCUIT FOR DRIVING OPTICAL MODULATOR, AND METHOD FOR MODULATING OPTICAL SIGNAL

Номер патента: US20140169723A1. Автор: Kato Tomoaki. Владелец: NEC Corporation. Дата публикации: 2014-06-19.

INTEGRATED CIRCUIT DEVICE, VOLTAGE REGULATOR MODULE AND METHOD FOR COMPENSATING A VOLTAGE SIGNAL

Номер патента: US20140176220A1. Автор: Priel Michael,Fleshel Leonid,Sofer Sergey. Владелец: Freescale Semiconductor, Inc.. Дата публикации: 2014-06-26.

INTEGRATED CIRCUIT INCLUDING A MODIFIED CELL AND A METHOD OF DESIGNING THE SAME

Номер патента: US20180096092A1. Автор: KIM Jin-Tae,CHO Doo-Hee,LEE Seung-Young,DO Jung-ho,Song Tae-Joong. Владелец: . Дата публикации: 2018-04-05.

TOUCH SENSING INTEGRATED CIRCUIT SYSTEM, TOUCH SENSING SYSTEM, AND METHOD FOR WRITING FIRMWARE

Номер патента: US20210182076A1. Автор: LEE Gyu Chul. Владелец: . Дата публикации: 2021-06-17.

SYSTEM COMPRISING A MASTER DEVICE AND A SLAVE DEVICE HAVING MULTIPLE INTEGRATED CIRCUIT DIE, WIRELESS COMMUNICATION UNIT AND METHOD THEREFOR

Номер патента: US20170192918A1. Автор: Tenbroek Bernard Mark,Ivory David Stephen. Владелец: . Дата публикации: 2017-07-06.

REVERSE ENGINEERING DATA ANALYSIS SYSTEM, AND INTEGRATED CIRCUIT COMPONENT DATA PROCESSING TOOL AND METHOD THEREOF

Номер патента: US20190206040A1. Автор: Green Michael. Владелец: . Дата публикации: 2019-07-04.

INTEGRATED CIRCUITS HAVING SHIELDED MEMS DEVICES AND METHODS FOR FABRICATING SHIELDED MEMS DEVICES

Номер патента: US20170313577A1. Автор: Kumar Rakesh,RANGANATHAN Nagarajan,Pineda Humberto Campanella,Yelehanka Ramachandramurthy Pradeep,Sbiaa Zouhair. Владелец: . Дата публикации: 2017-11-02.

Display Controller for improving display noise, Semiconductor Integrated Circuit Device including the same and Method there-of

Номер патента: KR102299574B1. Автор: 김보영. Владелец: 삼성전자주식회사. Дата публикации: 2021-09-07.

Integrated circuit device, power management module and method for providing power management

Номер патента: EP2673684B1. Автор: Sergey Sofer,Michael Priel,Dan Kuzmin. Владелец: NXP USA Inc. Дата публикации: 2019-06-05.

TFT-LCD source driver integrated circuit for improving display quality and Method for eliminating offset of output amplifier

Номер патента: KR100510500B1. Автор: 최창휘. Владелец: 삼성전자주식회사. Дата публикации: 2005-08-26.

Integrated circuit card programming modules, systems and methods

Номер патента: CA2384725A1. Автор: Peter E. Johnson,Robert W. Lundstrom. Владелец: Robert W. Lundstrom. Дата публикации: 2001-03-29.

Integrated circuit device, signal processing system and method for managing power resources of a signal processing system

Номер патента: WO2011144965A1. Автор: Michael Pallas,Vladimir Litovtchenko,Frank Donner. Владелец: Freescale Semiconductor, Inc.. Дата публикации: 2011-11-24.

Digital integrated circuit testing and characterization system and method

Номер патента: US9188627B2. Автор: Muhammad E. S. Elrabaa. Владелец: KING FAHD UNIVERSITY OF PETROLEUM AND MINERALS. Дата публикации: 2015-11-17.

Integrated circuit device, voltage regulation circuitry and method for regulating a voltage supply signal

Номер патента: EP2671227A4. Автор: Michael Priel,Dan Kuzmin,Anton Rozen. Владелец: NXP USA Inc. Дата публикации: 2017-10-18.

Integrated circuit device, power management module and method for providing power management

Номер патента: WO2012107798A1. Автор: Sergey Sofer,Michael Priel,Dan Kuzmin. Владелец: Freescale Semiconductor, Inc.. Дата публикации: 2012-08-16.

Integrated circuit device, power management module and method for providing power management

Номер патента: CN103348303A. Автор: 迈克尔·普里尔,丹·库兹明,谢尔盖·索费. Владелец: FREESCALE SEMICONDUCTOR INC. Дата публикации: 2013-10-09.

Integrated circuit sorts fool proof system and method

Номер патента: CN107321641B. Автор: 张建文,顾汉玉. Владелец: Semicon Microelectronics Shenzhen Co Ltd. Дата публикации: 2019-08-06.

Integrated circuit for peforming data processing and method for controlling same

Номер патента: TWI309904B. Автор: Trevor Nigel Mudge,Krisztian Flautner,Todd Michael Austin,David Theodore Blaauw. Владелец: Advanced Risc Mach Ltd. Дата публикации: 2009-05-11.

Integrated circuit for driving display panel and method thereof

Номер патента: US10699662B2. Автор: Chia-Wei Chang,Chien-Yu Chen,Hsien-Wen Lo,I-Te Liu. Владелец: NOVATEK MICROELECTRONICS CORP. Дата публикации: 2020-06-30.

Integrated circuit device, read data amplifier, and method for operating read data amplifier

Номер патента: JP3841771B2. Автор: マイケル・シィ・パリス,キム・シィ・ハーディー. Владелец: Sony Corp. Дата публикации: 2006-11-01.

Integrated circuit and programming modules, systems and methods

Номер патента: CN1376288A. Автор: P·E·约翰逊,R·W·伦德斯特伦. Владелец: Datacard Corp. Дата публикации: 2002-10-23.

Integrated circuit having an embedded memory and method for testing the memory

Номер патента: US8379466B2. Автор: Michael D. Snyder,Andrew C. Russell,James D. Burnett,Shayan Zhang,Kent P. Fancher. Владелец: FREESCALE SEMICONDUCTOR INC. Дата публикации: 2013-02-19.

Integrated circuit device, computing apparatus, system and method for matrix multiplication operation

Номер патента: CN114692075A. Автор: 不公告发明人. Владелец: Cambricon Technologies Corp Ltd. Дата публикации: 2022-07-01.

Integrated circuit including a modified cell and a method of designing the same

Номер патента: TW201814562A. Автор: 金珍泰,李昇映,都楨湖,宋泰中,趙斗熙. Владелец: 三星電子股份有限公司. Дата публикации: 2018-04-16.

Reverse engineering data analysis system, and integrated circuit component data processing tool and method thereof

Номер патента: CA2990205A1. Автор: Michael Green. Владелец: TechInsights Inc. Дата публикации: 2019-06-28.

Signal processing system, integrated circuit comprising buffer control logic and method therefor

Номер патента: EP2457168A4. Автор: Joseph Circello,Mark Maiolani,Alistair Robertson. Владелец: FREESCALE SEMICONDUCTOR INC. Дата публикации: 2014-04-16.

Signal processing system, integrated circuit comprising buffer control logic and method therefor

Номер патента: EP2457168A1. Автор: Joseph Circello,Mark Maiolani,Alistair Robertson. Владелец: FREESCALE SEMICONDUCTOR INC. Дата публикации: 2012-05-30.

An inter integrated circuit router error management system and method

Номер патента: GB2403039B. Автор: Kirk Yates,Thane M Larson. Владелец: Hewlett Packard Development Co LP. Дата публикации: 2006-10-04.

Signal processing system and integrated circuit comprising a prefetch module and method therefor

Номер патента: US20120124336A1. Автор: Joseph Circello,Mark Maiolani,Alistair Robertson. Владелец: FREESCALE SEMICONDUCTOR INC. Дата публикации: 2012-05-17.

Signal processing system and integrated circuit comprising a prefetch module and method therefor

Номер патента: WO2011010183A1. Автор: Joseph Circello,Mark Maiolani,Alistair Robertson. Владелец: Freescale Semiconductor, Inc.. Дата публикации: 2011-01-27.

Implants, kits of parts, packages and uses therof, methods of orthopaedic surgery, surgical tools for expanding implants, surgical tool sets and kits for orthopaedic surgery.

Номер патента: NL2034197B1. Автор: Mohammad Ahmadi Seyed,Sajadi Banafsheh,Aarts Sanne. Владелец: Am Solutions Holding B V. Дата публикации: 2024-09-03.

INTEGRATED CIRCUIT INCLUDING A MODIFIED CELL AND A METHOD OF DESIGNING THE SAME

Номер патента: US20200334407A1. Автор: KIM Jin-Tae,CHO Doo-Hee,LEE Seung-Young,DO Jung-ho,Song Tae-Joong. Владелец: . Дата публикации: 2020-10-22.

Testable integrated circuit, system in package and test instruction set

Номер патента: US7948243B2. Автор: Fransciscus G. M. De Jong,Alexander Biewenga. Владелец: NXP BV. Дата публикации: 2011-05-24.

Testable integrated circuit, system in package and test instruction set

Номер патента: CN101228451B. Автор: 弗兰西斯库斯·G·M·德容,亚历山大·S·比文格. Владелец: KONINKLIJKE PHILIPS ELECTRONICS NV. Дата публикации: 2011-07-27.

DISPENSING CAPSULE AND METHOD AND APPARATUS OF FORMING SAME

Номер патента: US20200231370A1. Автор: Gordon Stuart,Appleford Mark. Владелец: VARDEN PROCESS PTY LTD. Дата публикации: 2020-07-23.

Electrically Conductive Confined Space Ventilator Conduit Formed of Conductive Polymer, Electrical Grounding Circuit for Ventilation System Using Same, and Methods of Using and Forming Same

Номер патента: AU2004202394B2. Автор: David Frank Angelico. Владелец: Air Systems Inc. Дата публикации: 2007-11-22.

Electrically conductive confined space ventilator conduit formed of conductive polymer, electrical grounding circuit for ventilation systems using same, and methods of using and forming same

Номер патента: US7992593B2. Автор: David Frank Angelico. Владелец: Air Systems International Inc. Дата публикации: 2011-08-09.

Electrically conductive confined space ventilator conduit formed of conductive polymer, electrical grounding circuit for ventilation system using same, and methods of using and forming same

Номер патента: TW200504292A. Автор: David Frank Angelico. Владелец: Air Systems Inc. Дата публикации: 2005-02-01.

Electrophotographic photoreceptor, and method and apparatus of forming electrophotographic image

Номер патента: US20160054668A1. Автор: Masanori Yumita,Daisuke Kodama,Mari Konishi. Владелец: KONICA MINOLTA INC. Дата публикации: 2016-02-25.

Electrophotographic photoreceptor, and method and apparatus of forming electrophotographic image

Номер патента: US09423707B2. Автор: Masanori Yumita,Daisuke Kodama,Mari Konishi. Владелец: KONICA MINOLTA INC. Дата публикации: 2016-08-23.

Novel polymer/substrate and polymer/polymer interfaces and methods of modeling and forming same

Номер патента: WO2003083901A3. Автор: Nancy Iwamoto. Владелец: Nancy Iwamoto. Дата публикации: 2004-03-25.

Novel polymer/substrate and polymer/polymer interfaces and methods of modeling and forming same

Номер патента: WO2003083901A2. Автор: Nancy Iwamoto. Владелец: HONEYWELL INTERNATIONAL INC.. Дата публикации: 2003-10-09.

Polymer/substrate and polymer/polymer interfaces and methods of modeling and forming same

Номер патента: US6852354B2. Автор: Nancy E. Iwamoto. Владелец: Honeywell International Inc. Дата публикации: 2005-02-08.

BIOMARKER SENSOR ARRAY AND CIRCUIT AND METHODS OF USING AND FORMING SAME

Номер патента: US20160041155A1. Автор: Takulapalli Bharath. Владелец: . Дата публикации: 2016-02-11.

HIGHLY POROUS CERAMIC MATERIAL AND METHOD OF USING AND FORMING SAME

Номер патента: US20140158613A1. Автор: Weimer Alan W.,Liang Xinhua. Владелец: THE REGENTS OF THE UNIVERSITY OF COLORADO. Дата публикации: 2014-06-12.

TEMPLATED MATERIALS, STRUCTURES INCLUDING THE MATERIALS, AND METHODS OF USING AND FORMING SAME

Номер патента: US20210247557A1. Автор: Liu Quingkun,Smalyukh Ivan I.,De La Cruz Joshua A.,Fleury Blaise,Abraham Eldho,Cherpak Vladyslav,Senyuk Bohdan,Hess Andrew Johnston. Владелец: . Дата публикации: 2021-08-12.

Migraine relief composition and methods of using and forming same

Номер патента: US20040219229A1. Автор: Tim Clarot. Владелец: Matrixx Initiatives Inc. Дата публикации: 2004-11-04.

Highly porous ceramic material and method of using and forming same

Номер патента: US10138169B2. Автор: Alan W. Weimer,Xinhua Liang. Владелец: University of Colorado. Дата публикации: 2018-11-27.

Novel polymer/substrate and polymer/polymer interfaces and methods of modeling and forming same

Номер патента: US20020157788A1. Автор: Nancy Iwamoto. Владелец: Individual. Дата публикации: 2002-10-31.

Novel polymer/substrate and polymer/polymer interfaces and methods of modeling and forming same

Номер патента: AU2003223267A8. Автор: Nancy Iwamoto. Владелец: Honeywell International Inc. Дата публикации: 2003-10-13.

Novel polymer/substrate and polymer/polymer interfaces and methods of modeling and forming same

Номер патента: AU2003223267A1. Автор: Nancy Iwamoto. Владелец: Honeywell International Inc. Дата публикации: 2003-10-13.

Method for staining inhibition of donepezil-containing adhesive composition and method for reduction of formed donepezil-related compounds

Номер патента: RU2460520C2. Автор: Дзунити СЕКИЯ,Хитоси АКЕМИ,Акинори ХАНАТАНИ,Сатико ТЕРАСИ,Сумийо НИСИ,Сатоко ВАСИРО. Владелец: Нитто Денко Корпорейшн. Дата публикации: 2012-09-10.

ELECTROPHOTOGRAPHIC PHOTORECEPTOR, AND METHOD AND APPARATUS OF FORMING ELECTROPHOTOGRAPHIC IMAGE

Номер патента: US20160054668A1. Автор: KONISHI Mari,KODAMA Daisuke,YUMITA Masanori. Владелец: . Дата публикации: 2016-02-25.

Detecting Apparatus and Method for Signs of Form Collapse

Номер патента: KR101284752B1. Автор: 박상준,함상규,진상윤,양병혁. Владелец: (주) 희림종합건축사사무소. Дата публикации: 2013-07-17.

Combination of setter used in firing and to-be-fired body and method for firing of formed honeycomb body

Номер патента: CN102351544A. Автор: 末信宏之,中村知雄,野口康,渡边武彦. Владелец: NGK Insulators Ltd. Дата публикации: 2012-02-15.

Device and method of implementing subpass interleaving of tiled image rendering

Номер патента: US20240104685A1. Автор: Michael John Livesley,Mika Tuomi,Ruijin Wu,Kiia Kallio,Jan H. Achrenius. Владелец: Advanced Micro Devices Inc. Дата публикации: 2024-03-28.

Packaging machine and a method of welding in the packaging machine

Номер патента: RU2743520C2. Автор: Кадзуки КАТО. Владелец: Дженерал Пэкер Ко., Лтд.. Дата публикации: 2021-02-19.

Lens shape measurement device and method, method of producing eyeglass lens, and method of producing eyeglasses

Номер патента: WO2008016066A1. Автор: Masaaki Inoguchi. Владелец: HOYA CORPORATION. Дата публикации: 2008-02-07.

Soil Removal System and Method, Method of Manufacture of the System, and Use of a Cleaning Wipe

Номер патента: DE102019006721A1. Автор: Julia Becker,Julia Christina Gwendolin Thomas. Владелец: Individual. Дата публикации: 2021-03-25.

Inspection Apparatus and Methods, Methods of Manufacturing Devices

Номер патента: US20160011523A1. Автор: WARNAAR Patrick,Pellemans Henricus Petrus Maria,SINGH Amandev. Владелец: ASML Netherlands B.V.. Дата публикации: 2016-01-14.

Inspection apparatus and methods, methods of manufacturing devices

Номер патента: TWI572992B. Автор: 阿曼帝席恩,漢瑞克皮杜斯瑪利亞皮勒曼,派翠克華那爾. Владелец: Ａｓｍｌ荷蘭公司. Дата публикации: 2017-03-01.

Paper leaflet, package comprising a case with such a leaflet, assembly formed of the package and its contents, method of producing the leaflet

Номер патента: EP1000769B1. Автор: Stephane Huault. Владелец: Rotanotice. Дата публикации: 2003-02-19.

Non-volatile memory packaging system with caching and method of operation thereof

Номер патента: US09424188B2. Автор: Alessandro Fin,Mike H. Amidi,Michael Rubino. Владелец: Smart Modular Technologies Inc. Дата публикации: 2016-08-23.

Integrated circuit package for scan testing semiconductor chip, operating method of integrated circuit package, and integrated circuit

Номер патента: EP4336197A3. Автор: Youngin PARK,Taewoong AHN,Junyeong JANG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-06-26.

Architecture and Testing for an Integrated Circuit Package

Номер патента: US20230341463A1. Автор: Md Altaf Hossain,Ankireddy Nalamalpu,Mahesh K. Kumashikar,Kalyana Ravindra Kantipudi. Владелец: Individual. Дата публикации: 2023-10-26.

Electronic Package and Method for Testing the Same

Номер патента: US20070285103A1. Автор: Shakil Ahmad,Poh Kang,Narang Singh. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2007-12-13.

Method of decomposing layout design for preparing photomask set printed onto wafer by photolithography, method of forming photomask set and method of fabricating integrated circuit

Номер патента: US09971250B2. Автор: Yu-Cheng Tung. Владелец: United Microelectronics Corp. Дата публикации: 2018-05-15.

Integrated circuit (ic) module, multi-interface ic card, and methods of forming same

Номер патента: WO2024131394A1. Автор: Lan DENG,Shek Tong LAM. Владелец: Act Identity Technology Limited. Дата публикации: 2024-06-27.

Manufacturing method of sputtering targets from cast disilicide of refractory metal and facility for its implementation

Номер патента: RU2356964C1. Автор: Вадим Георгиевич Глебовский,Евгений Дмитриевич Штинов. Владелец: Вадим Георгиевич Глебовский. Дата публикации: 2009-05-27.

Large-scale integrated circuit (version)

Номер патента: RU2006990C1. Автор: Константин Иванович Баринов,Владимир Евгеньевич Власов,Юрий Иванович Горбунов,Юрий Эмильевич Шенауэр,Александр Никодимович Латышонок. Владелец: Александр Никодимович Латышонок. Дата публикации: 1994-01-30.

Joint nail package and method and means of forming same

Номер патента: CA632681A. Автор: Ferguson Richard,Gettys D. Hoyle, Jr.. Владелец: Terrell Machine Co. Дата публикации: 1961-12-12.

Logic Circuit, Integrated Circuit Including The Logic Circuit, And Method Of Operating The Integrated Circuit

Номер патента: US20120212255A1. Автор: . Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2012-08-23.

EXTREMELY THIN SEMICONDUCTOR-ON-INSULATOR (ETSOI) INTEGRATED CIRCUIT WITH ON-CHIP RESISTORS AND METHOD OF FORMING THE SAME

Номер патента: US20120187493A1. Автор: Doris Bruce B.,Cheng Kangguo,Khakifirooz Ali,Shahidi Ghavam G.. Владелец: INTERNATIONAL BUSINESS MACHINES CORPORATION. Дата публикации: 2012-07-26.

TRENCH TYPE PIP CAPACITOR, POWER INTEGRATED CIRCUIT DEVICE USING THE CAPACITOR, AND METHOD OF MANUFACTURING THE POWER INTEGRATED CIRCUIT DEVICE

Номер патента: US20130093053A1. Автор: TOYODA Yoshiaki,OOE Takatoshi,IWAYA Masanobu. Владелец: FUJI ELECTRIC CO., LTD.. Дата публикации: 2013-04-18.

INTEGRATED CIRCUIT HAVING A BUS NETWORK, AND METHOD FOR THE INTEGRATED CIRCUIT

Номер патента: US20130124767A1. Автор: Prasadh Ramamoorthy Guru. Владелец: ARM LIMITED. Дата публикации: 2013-05-16.

INTEGRATED CIRCUIT, A CHIP PACKAGE AND A METHOD FOR MANUFACTURING AN INTEGRATED CIRCUIT

Номер патента: US20140084302A1. Автор: Mauder Anton,Mahler Joachim,Hosseini Khalil. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2014-03-27.

INTEGRATED CIRCUIT SYSTEM WITH HIERARCHICAL CAPACITOR AND METHOD OF MANUFACTURE THEREOF

Номер патента: US20120007214A1. Автор: Chu Shao-Fu Sanford,Zhang Shaoqiang,Chew Johnny Kok Wai. Владелец: GLOBALFOUNDRIES Singapore Pte. Ltd.. Дата публикации: 2012-01-12.

INTEGRATED CIRCUIT SYSTEM WITH BANDGAP MATERIAL AND METHOD OF MANUFACTURE THEREOF

Номер патента: US20120119281A1. Автор: . Владелец: GLOBALFOUNDRIES Singapore Pte. Ltd.. Дата публикации: 2012-05-17.

INTEGRATED CIRCUIT FOR TESTING SMART CARD AND DRIVING METHOD OF THE CIRCUIT

Номер патента: US20120166901A1. Автор: Kim Eui Seung. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2012-06-28.

SEMICONDUCTOR INTEGRATED CIRCUIT MOUNTABLE ON RECORDING DEVICE AND METHOD OF OPERATING THE SAME

Номер патента: US20120188375A1. Автор: FUNABASHI Yutaka. Владелец: RENESAS ELECTRONICS CORPORATION. Дата публикации: 2012-07-26.

INTEGRATED CIRCUIT INCLUDING A BIPOLAR TRANSISTOR AND METHODS OF MAKING THE SAME

Номер патента: US20120235280A1. Автор: . Владелец: Taiwan Semiconductor Manufacturing Company, Ltd.. Дата публикации: 2012-09-20.

INTEGRATED CIRCUIT INCLUDING A VOLTAGE DIVIDER AND METHODS OF OPERATING THE SAME

Номер патента: US20130076335A1. Автор: LIN Yvonne,Chu Wen-Ting. Владелец: Taiwan Semiconductor Manufacturing Company, Ltd.. Дата публикации: 2013-03-28.

Integrated Circuit having a MOM Capacitor and Method of Making Same

Номер патента: US20130113073A1. Автор: LIU Chi-Wen,Wang Chao-Hsiung. Владелец: Taiwan Semiconductor Manufacturing Company, Ltd.. Дата публикации: 2013-05-09.

INTEGRATED CIRCUIT HAVING THINNER GATE DIELECTRIC AND METHOD OF MAKING

Номер патента: US20130207200A1. Автор: Lu Chih-Hung,Hao Ching-Chen,LEE Song-Bor,HUANG Ching-Kun. Владелец: Taiwan Semiconductor Manufacturing Company, Ltd.. Дата публикации: 2013-08-15.

INTEGRATED CIRCUIT HAVING A SEMICONDUCTOR ARRANGEMENT AND METHOD FOR PRODUCING IT

Номер патента: US20120049325A1. Автор: . Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2012-03-01.

INTEGRATED CIRCUIT WITH CHANNEL ESTIMATION MODULE AND METHOD THEREFOR

Номер патента: US20120087428A1. Автор: Martinez Vincent. Владелец: Freescale Semiconductor, Inc.. Дата публикации: 2012-04-12.

SIGNAL PROCESSING SYSTEM AND INTEGRATED CIRCUIT COMPRISING A PREFETCH MODULE AND METHOD THEREFOR

Номер патента: US20120124336A1. Автор: Maiolani Mark,Robertson Alistair,Circello Joseph. Владелец: Freescale Semiconductor, Inc.. Дата публикации: 2012-05-17.

RF TRANSMITTER AND INTEGRATED CIRCUIT WITH PROGRAMMABLE BASEBAND FILTERING AND METHODS FOR USE THEREWITH

Номер патента: US20120157017A1. Автор: . Владелец: BROADCOM CORPORATION. Дата публикации: 2012-06-21.

INTEGRATED CIRCUITS HAVING PLACE-EFFICIENT CAPACITORS AND METHODS FOR FABRICATING THE SAME

Номер патента: US20120199950A1. Автор: Chumakov Dmytro. Владелец: GLOBALFOUNDRIES INC.. Дата публикации: 2012-08-09.

Integrated Circuit Chip with Repeater Flops and Methods for Automated Design of Same

Номер патента: US20120221993A1. Автор: . Владелец: Advanced Micro Devices, Inc.. Дата публикации: 2012-08-30.

INTEGRATED CIRCUITS HAVING PLACE-EFFICIENT CAPACITORS AND METHODS FOR FABRICATING THE SAME

Номер патента: US20120267763A1. Автор: Chumakov Dmytro. Владелец: GLOBALFOUNDRIES INC.. Дата публикации: 2012-10-25.

RF TRANSMITTER, INTEGRATED CIRCUIT DEVICE, WIRELESS COMMUNICATION UNIT AND METHOD THEREFOR

Номер патента: US20120269291A1. Автор: Wang Hua,Peng Chun-Hsien,Son Sang Won,Liang Paul Cheng Po,LU Chao,Liu Julia. Владелец: . Дата публикации: 2012-10-25.

RF TRANSMITTER ARCHITECTURE, INTEGRATED CIRCUIT DEVICE, WIRELESS COMMUNICATION UNIT AND METHOD THEREFOR

Номер патента: US20120269293A1. Автор: . Владелец: . Дата публикации: 2012-10-25.

INTEGRATED CIRCUIT HAVING DOPED SEMICONDUCTOR BODY AND METHOD

Номер патента: US20120313225A1. Автор: . Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2012-12-13.

RF AMPLIFIER MODULE, INTEGRATED CIRCUIT DEVICE, WIRELESS COMMUNICATION UNIT AND METHOD THEREFOR

Номер патента: US20130009710A1. Автор: Zhang Hongli,Tenbroek Bernard Mark. Владелец: . Дата публикации: 2013-01-10.

INTEGRATED CIRCUIT WITH ELECTROMAGNETIC INTRACHIP COMMUNICATION AND METHODS FOR USE THEREWITH

Номер патента: US20130023210A1. Автор: ROFOUGARAN AHMADREZA (REZA). Владелец: BROADCOM CORPORATION. Дата публикации: 2013-01-24.

INTEGRATED CIRCUIT, SYSTEM INCLUDING THE SAME, AND OPERATION METHOD OF THE SYSTEM

Номер патента: US20130044553A1. Автор: KWEAN Ki-Chang. Владелец: . Дата публикации: 2013-02-21.

INTEGRATED CIRCUIT DEVICE, SIGNAL PROCESSING SYSTEM AND METHOD FOR MANAGING POWER RESOURCES OF A SIGNAL PROCESSING SYSTEM

Номер патента: US20130054988A1. Автор: Litovtchenko Vladimir,Donner Frank,Pallas Michael. Владелец: FREESCALE SEMICONDUCTOR INC. Дата публикации: 2013-02-28.

INTEGRATED CIRCUIT HAVING A STANDARD CELL AND METHOD FOR FORMING

Номер патента: US20130069691A1. Автор: Sundareswaran Savithri. Владелец: . Дата публикации: 2013-03-21.

MOSFET INTEGRATED CIRCUIT HAVING DOPED CONDUCTIVE INTERCONNECTS AND METHODS FOR ITS MANUFACTURE

Номер патента: US20130089980A1. Автор: Witt Christian. Владелец: GLOBALFOUNDRIES INC.. Дата публикации: 2013-04-11.

DIGITAL INTEGRATED CIRCUIT TESTING AND CHARACTERIZATION SYSTEM AND METHOD

Номер патента: US20130116961A1. Автор: ELRABAA Muhammad E.S.. Владелец: KING FAHD UNIVERSITY OF PETROLEUM AND MINERALS. Дата публикации: 2013-05-09.

Integrated Circuit Devices with Well Regions and Methods for Forming the Same

Номер патента: US20140001518A1. Автор: CHEN Chia-Chung,LIU Mingo,Liang Victor Chiang,Huang Chi-Feng. Владелец: Taiwan Semiconductor Manufacturing Company, Ltd.. Дата публикации: 2014-01-02.

Photonic Integrated Circuit Based Phase Conjugation Devices and Methods

Номер патента: US20140003815A1. Автор: Mertz Pierre. Владелец: . Дата публикации: 2014-01-02.

PACKAGED INTEGRATED CIRCUIT HAVING LARGE SOLDER PADS AND METHOD FOR FORMING

Номер патента: US20140117554A1. Автор: Uehling Trent S.,WILKERSON Brett P.. Владелец: . Дата публикации: 2014-05-01.

Integrated circuit capable of selecting function and method for selecting function

Номер патента: JP3636232B2. Автор: 晶柴田,嘉人大友,浩一瀬野. Владелец: Mitsumi Electric Co Ltd. Дата публикации: 2005-04-06.

Integrated circuit chip temperature test device and method

Номер патента: CN101452048A. Автор: 王楠,周平,古炯钧. Владелец: Shanghai Hua Hong NEC Electronics Co Ltd. Дата публикации: 2009-06-10.

Integrated circuit contact impedance test system and method thereof

Номер патента: TW555992B. Автор: Tsung-Jr Wu. Владелец: United Microelectronics Corp. Дата публикации: 2003-10-01.

Electrically conductive confined space ventilator conduit formed of conductive polymer, electrical grounding circuit for ventilation systems using same, and methods of using and forming same

Номер патента: CA2561299A1. Автор: David Frank Angelico. Владелец: David Frank Angelico. Дата публикации: 2004-12-25.

Texturizing additive for formed meat products and method for obtaining of formed meat products with the use of texturizing additive

Номер патента: RU2249417C1. Автор: Т.В. Каренгина,И.Ф. Горлов. Владелец: ГУ Волгоградский научно-исследовательский технологический институт мясо-молочного скотоводства и переработки продукции животноводства РАСХН. Дата публикации: 2005-04-10.

Fruit and vegetables-storing package, and freshness keeping method of fruit and vegetables

Номер патента: JP2020079092A. Автор: Midori Otsuki,みどり大槻. Владелец: Sumitomo Bakelite Co Ltd. Дата публикации: 2020-05-28.

The integrated package and its manufacture method of heat exchanger and expansion valve

Номер патента: CN103712383B. Автор: 周晓东,崔凯,黄宁杰. Владелец: Zhejiang Sanhua Automotive Components Co Ltd. Дата публикации: 2017-12-01.

Package and temperature-control method of electronic device with active temperature control

Номер патента: TWI247399B. Автор: Jimmy Hsu,Shih-Chang Ku. Владелец: Via Tech Inc. Дата публикации: 2006-01-11.

Methods of Forming Nonvolatile Memory Devices Using Nonselective and Selective Etching Techniques to Define Vertically Stacked Word Lines

Номер патента: US20120003831A1. Автор: . Владелец: . Дата публикации: 2012-01-05.

Antireflective Coatings for Via Fill and Photolithography Applications and Methods of Preparation Thereof

Номер патента: US20120001135A1. Автор: . Владелец: . Дата публикации: 2012-01-05.

WAFER STACKED PACKAGE WAVING BERTICAL HEAT EMISSION PATH AND METHOD OF FABRICATING THE SAME

Номер патента: US20120001348A1. Автор: . Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2012-01-05.

SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

Номер патента: US20120003808A1. Автор: Lee Sang-yun. Владелец: BESANG INC.. Дата публикации: 2012-01-05.

SEMICONDUCTOR STRUCTURE AND METHOD OF FABRICATING THE SAME

Номер патента: US20120003815A1. Автор: Lee Sang-yun. Владелец: BESANG INC.. Дата публикации: 2012-01-05.

Semiconductor Device and Method of Forming Compliant Stress Relief Buffer Around Large Array WLCSP

Номер патента: US20120001325A1. Автор: Shim Il Kwon,Chow Seng Guan,Lin Yaojian. Владелец: STATS CHIPPAC, LTD.. Дата публикации: 2012-01-05.

SEMICONDUCTOR PACKAGE AND METHOD OF FABRICATING THE SAME

Номер патента: US20120001329A1. Автор: Kim Young Lyong,Lee Jongho,AHN EUNCHUL,Kim Hyeongseob. Владелец: Samsung Electronics Co., Ltd. Дата публикации: 2012-01-05.

APPARATUS INTEGRATING MICROELECTROMECHANICAL SYSTEM DEVICE WITH CIRCUIT CHIP AND METHODS FOR FABRICATING THE SAME

Номер патента: US20120001276A1. Автор: . Владелец: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE. Дата публикации: 2012-01-05.

SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME, RADIOLOGICAL IMAGING APPARATUS AND METHOD OF MANUFACTURING THE SAME, AND METHOD OF TESTING SOLID-STATE IMAGING DEVICE

Номер патента: US20120001081A1. Автор: . Владелец: HAMAMATSU PHOTONICS K.K.. Дата публикации: 2012-01-05.

Semiconductor Package and Method of Forming Similar Structure for Top and Bottom Bonding Pads

Номер патента: US20120001326A1. Автор: . Владелец: STATS CHIPPAC, LTD.. Дата публикации: 2012-01-05.

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREFOR

Номер патента: US20120001244A1. Автор: Yamazaki Shunpei,KOYAMA Jun,MURAKAMI Satoshi,Tanaka Yukio,KITAKADO Hidehito. Владелец: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.. Дата публикации: 2012-01-05.

ION-SENSING CHARGE-ACCUMULATION CIRCUITS AND METHODS

Номер патента: US20120000274A1. Автор: Fife Keith. Владелец: LIFE TECHNOLOGIES CORPORATION. Дата публикации: 2012-01-05.

FREQUENCY SPECIFIC CLOSED LOOP FEEDBACK CONTROL OF INTEGRATED CIRCUITS

Номер патента: US20120001651A1. Автор: Burr James B.,Koniaris Kleanthes G.. Владелец: . Дата публикации: 2012-01-05.

METHOD AND SYSTEM FOR ALIGNMENT OF INTEGRATED CIRCUITS

Номер патента: US20120001340A1. Автор: . Владелец: GENERAL ELECTRIC COMPANY. Дата публикации: 2012-01-05.

3d integrated circuit package and method of fabrication thereof

Номер патента: SG172704A1. Автор: Subhash Gupta,Sangki Hong. Владелец: Tezzaron Semiconductor S Pte Ltd. Дата публикации: 2011-07-28.

RESISTIVE RAM DEVICES AND METHODS

Номер патента: US20120001144A1. Автор: . Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2012-01-05.

MEMORY SYSTEM, MEMORY TEST SYSTEM AND METHOD OF TESTING MEMORY SYSTEM AND MEMORY TEST SYSTEM

Номер патента: US20120002495A1. Автор: SUH Sung-Dong,HA Kyoung-Ho,Song Ki-Jae,KIM Seong-gu,JOE In-sung,Cho Soo-Haeng,Kim Yeoung-kum. Владелец: . Дата публикации: 2012-01-05.

Engine systems and methods of operating an engine

Номер патента: US20120000435A1. Автор: . Владелец: . Дата публикации: 2012-01-05.

SYSTEM AND METHOD FOR REDUCING NOISE IN AN IMAGE

Номер патента: US20120002896A1. Автор: Kim Yeong-Taeg,Lertrattanapanich Surapong. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2012-01-05.

ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION

Номер патента: US20120003585A1. Автор: TSUBAKI Hideaki,Tsuchimura Tomotaka,Yatsuo Tadateru,TSUCHIHASHI Toru,SHIRAKAWA Koji. Владелец: FUJIFILM Corporation. Дата публикации: 2012-01-05.

Non-Volatile Resistive Oxide Memory Cells, Non-Volatile Resistive Oxide Memory Arrays, And Methods Of Forming Non-Volatile Resistive Oxide Memory Cells And Memory Arrays

Номер патента: US20120001147A1. Автор: . Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2012-01-05.

LAYER HAVING FUNCTIONALITY, METHOD FOR FORMING FLEXIBLE SUBSTRATE HAVING THE SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Номер патента: US20120001181A1. Автор: AOKI Tomoyuki,Tsurume Takuya. Владелец: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.. Дата публикации: 2012-01-05.

METHODS OF FORMING NANOSCALE FLOATING GATE

Номер патента: US20120001248A1. Автор: Sandhu Gurtej S.,Ramaswamy D.V. Nirmal. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2012-01-05.

INTEGRATED CIRCUIT WAFER DICING METHOD

Номер патента: US20120003817A1. Автор: Lin Ching-San,Wu Kun-Tai,Wang Chih-Chao. Владелец: . Дата публикации: 2012-01-05.

SYSTEM AND METHOD FOR DISTINGUISHING INPUT OBJECTS

Номер патента: US20120001855A1. Автор: TRENT,JR. Raymond Alexander,Palsan Carmen. Владелец: SYNAPTICS INCORPORATED. Дата публикации: 2012-01-05.

AUDIO DRIVER SYSTEM AND METHOD

Номер патента: US20120002819A1. Автор: Thormundsson Trausti,Jonsson Ragnar H.,Thorvaldsson Vilhjalmur S.,Wihardja James Walter. Владелец: . Дата публикации: 2012-01-05.

INTEGRATED CIRCUIT DEVICE WITH WELL CONTROLLED SURFACE PROXIMITY AND METHOD OF MANUFACTURING SAME

Номер патента: US20120001238A1. Автор: Ouyang Hui,Fan Wei-Han,Tsai Ming-Huan,Cheng Chun-Fai. Владелец: Taiwan Semiconductor Manufacturing Company, Ltd.. Дата публикации: 2012-01-05.

METHOD OF FABRICATING AN INTEGRATED CIRCUIT DEVICE

Номер патента: US20120003806A1. Автор: . Владелец: Taiwan Semiconductor Manufacturing Company, Ltd.. Дата публикации: 2012-01-05.

ULTRAHIGH DENSITY VERTICAL NAND MEMORY DEVICE AND METHOD OF MAKING THEREOF

Номер патента: US20120001250A1. Автор: Alsmeier Johann. Владелец: SanDisk Corporation. Дата публикации: 2012-01-05.

DIE CONNECTION MONITORING SYSTEM AND METHOD

Номер патента: US20120001642A1. Автор: Hodge Richard H.,Sylvester Jeffry S.. Владелец: . Дата публикации: 2012-01-05.

VOLTAGE LEVEL SHIFT CIRCUITS AND METHODS

Номер патента: US20120001683A1. Автор: . Владелец: PACIFICTECH MICROELECTRONICS, INC.. Дата публикации: 2012-01-05.

DEVICES AND METHOD FOR ACCELEROMETER-BASED CHARACTERIZATION OF CARDIAC SYNCHRONY AND DYSSYNCHRONY

Номер патента: US20120004564A1. Автор: Dobak,III John Daniel. Владелец: CARDIOSYNC, INC.. Дата публикации: 2012-01-05.

ACTIVITY MONITORING SYSTEMS AND METHODS

Номер патента: US20120004883A1. Автор: . Владелец: Apple Inc.. Дата публикации: 2012-01-05.

ULTRAHIGH DENSITY VERTICAL NAND MEMORY DEVICE AND METHOD OF MAKING THEREOF

Номер патента: US20120001247A1. Автор: Alsmeier Johann. Владелец: SanDisk Corporation. Дата публикации: 2012-01-05.

ULTRAHIGH DENSITY VERTICAL NAND MEMORY DEVICE & METHOD OF MAKING THEREOF

Номер патента: US20120001249A1. Автор: Alsmeier Johann,Samachisa George. Владелец: SanDisk Corporation. Дата публикации: 2012-01-05.

ULTRAHIGH DENSITY VERTICAL NAND MEMORY DEVICE AND METHOD OF MAKING THEREOF

Номер патента: US20120001252A1. Автор: Alsmeier Johann,Purayath Vinod Robert,Chien Henry,Matamis George,Lee Yao-Sheng,Kai James,Zhang Yuan. Владелец: SanDisk Corporation. Дата публикации: 2012-01-05.

MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

Номер патента: US20120003795A1. Автор: . Владелец: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.. Дата публикации: 2012-01-05.

Card Guide System and Method

Номер патента: US20120002385A1. Автор: Hanna John N.,Crowley David M.. Владелец: . Дата публикации: 2012-01-05.

SYSTEM AND METHOD FOR PARTICULATE MATTER FILTER REGENERATION USING A CATALYTIC CONVERTER AS A COMBUSTOR

Номер патента: US20120000180A1. Автор: JR. Michael J.,Gonze Eugene V.,Paratore,Santoso Halim G.. Владелец: GM GLOBAL TECHNOLOGY OPERATIONS, INC.. Дата публикации: 2012-01-05.

IR Detector System and Method

Номер патента: US20120001073A1. Автор: . Владелец: SELEX GALILEO LIMITED. Дата публикации: 2012-01-05.

Method of Manufacturing Vertical Pin Diodes

Номер патента: US20120001305A1. Автор: Peroni Marco,Pantellini Alessio. Владелец: SELEX SISTEMI INTEGRATI S.P.A.. Дата публикации: 2012-01-05.

Non-Volatile Memory And Method With Reduced Neighboring Field Errors

Номер патента: US20120002483A1. Автор: . Владелец: . Дата публикации: 2012-01-05.

FIELD-PORTABLE IMPEDANCE READER AND METHODS OF MAKING THE SAME

Номер патента: US20120004851A1. Автор: Potyrailo Radislav Alexandrovich,Morris William Guy,Ashe Jeffrey Michael,Surman Cheryl Margaret. Владелец: GENERAL ELECTRIC COMPANY. Дата публикации: 2012-01-05.

GATE STRUCTURES AND METHOD OF FABRICATING SAME

Номер патента: US20120001266A1. Автор: . Владелец: Taiwan Semiconductor Manufacturing Company, Ltd.. Дата публикации: 2012-01-05.

POWER AMPLIFIER AMPLITUDE MODULATOR SYSTEM AND METHOD

Номер патента: US20120001693A1. Автор: Aoki Ichiro,Hajimiri Seyed-Ali,Kee Scott D.,Damgaard Morten,Magoon Rahul,Mohta Setu,Aparicio Joo Roberto,Hatcher Geoff. Владелец: . Дата публикации: 2012-01-05.

PARTICULATE FILTER REGENERATION INTERRUPTION SYSTEMS AND METHODS

Номер патента: US20120000187A1. Автор: Darr Rebecca J.,Jasinkiewicz Paul,Shetney Justin A.,Mullins Jason Daniel,Crawford Kyle E.. Владелец: GM GLOBAL TECHNOLOGY OPERATIONS, INC.. Дата публикации: 2012-01-05.

MEMORY CELL THAT EMPLOYS A SELECTIVELY FABRICATED CARBON NANO-TUBE REVERSIBLE RESISTANCE-SWITCHING ELEMENT AND METHODS OF FORMING THE SAME

Номер патента: US20120001150A1. Автор: . Владелец: . Дата публикации: 2012-01-05.

Manufacturing Method of Semiconductor Film, Manufacturing Method of Semiconductor Device, and Manufacturing Method of Photoelectric Conversion Device

Номер патента: US20120003787A1. Автор: TANAKA Tetsuhiro,KATO Erika. Владелец: . Дата публикации: 2012-01-05.

Integrated circuit packages and methods of forming same

Вам могут быть интересны следующие патенты

Главная

Проекты и услуги

Контакты