PROCESS FOR FORMING A FIELD OXIDE LAYER OF A SEMICONDUCTOR DEVICE.
Номер патента: FR2669467B1
Опубликовано: 04-07-1997
Автор(ы): Choi Weon-Taek, Jang Taek-Yong, Paek Weon-Sik
Принадлежит: SAMSUNG ELECTRONICS CO LTD
Опубликовано: 04-07-1997
Автор(ы): Choi Weon-Taek, Jang Taek-Yong, Paek Weon-Sik
Принадлежит: SAMSUNG ELECTRONICS CO LTD
Method for forming high purity silicon oxide field oxide isolation region
Номер патента: US6818495B1. Автор: Jin-Yuan Lee,Min-Hsiung Chiang,Jenn Ming Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2004-11-16.