METHODS OF OPERATING VARIABLE RESISTANCE MEMORY DEVICES AND RELATED VARIABLE RESISTANCE MEMORY DEVICES SO OPERATING.

METHODS OF OPERATING VARIABLE RESISTANCE MEMORY DEVICES AND RELATED VARIABLE RESISTANCE MEMORY DEVICES SO OPERATING

Номер патента: US20140078812A1
Опубликовано: 20-03-2014
Автор(ы): BAEK INGYU, Ju Hyunsu, Kim Eunmi, PARK Seonggeon, Yang Min Kyu
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.
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Рисунок 1. Взаимосвязь патентов (ближайшие 20).

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Variable resistance memory devices using read mirror currents

Номер патента: US8605517B2. Автор: Young-don Choi. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2013-12-10.

Variable resistance memory devices using read mirror currents

Номер патента: US20120176830A1. Автор: Young-don Choi. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2012-07-12.

Stack type semiconductor memory device

Номер патента: US09960082B2. Автор: Nam Kyun PARK. Владелец: SK hynix Inc. Дата публикации: 2018-05-01.

Volatile memory device employing a resistive memory element

Номер патента: US09953697B2. Автор: Tanmay Kumar,Alper Ilkbahar. Владелец: SanDisk Technologies LLC. Дата публикации: 2018-04-24.

Split write operation for resistive memory cache

Номер патента: US20160092355A1. Автор: Xiaochun Zhu,Jungwon Suh,Xiangyu Dong. Владелец: Qualcomm Inc. Дата публикации: 2016-03-31.

Split write operation for resistive memory cache

Номер патента: EP3061096A1. Автор: Xiaochun Zhu,Jungwon Suh,Xiangyu Dong. Владелец: Qualcomm Inc. Дата публикации: 2016-08-31.

Split write operation for resistive memory cache

Номер патента: US09411727B2. Автор: Xiaochun Zhu,Jungwon Suh,Xiangyu Dong. Владелец: Qualcomm Inc. Дата публикации: 2016-08-09.

Neuromorphic hardware apparatus based on a resistive memory array

Номер патента: US20230048278A1. Автор: Ji-Sung Lee,Hyun-Sang Hwang,Woo-Seok Choi,Joon-Hyun Kwon,Han-saem Lee,Su-Jung Noh. Владелец: Kia Corp. Дата публикации: 2023-02-16.

Resistive memory apparatus and voltage generating circuit therefor

Номер патента: US20170243641A1. Автор: Tae Ho Kim. Владелец: SK hynix Inc. Дата публикации: 2017-08-24.

Resistive memory apparatus and voltage generating circuit therefor

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Selecting reversible resistance memory cells based on initial resistance switching

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Split write operation for resistive memory cache

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Apparatus to reduce retention failure in complementary resistive memory

Номер патента: US09830988B2. Автор: Wei Wu,Shigeki Tomishima,James W. Tschanz,Charles Augustine,Shih-Lien L. Lu. Владелец: Intel Corp. Дата публикации: 2017-11-28.

NONVOLATILE MEMORY DEVICE HAVING MULTIPLE READ CIRCUITS AND USING VARIABLE RESISTIVE MATERIALS

Номер патента: US20140247646A1. Автор: Lee Yong-jun,KWON HYO-JIN,CHUNG Hoi-ju,KWON Yong-Jin,PARK Eun-Hye,KIM CHAE-HOON. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2014-09-04.

Memory circuit, memory device and operation method thereof

Номер патента: US20220399059A1. Автор: E Ray HSIEH. Владелец: National Central University. Дата публикации: 2022-12-15.

Memory circuit, memory device and operation method thereof

Номер патента: US12014780B2. Автор: E Ray HSIEH. Владелец: National Central University. Дата публикации: 2024-06-18.

Variable resistance non-volatile memory device

Номер патента: US20210065795A1. Автор: Takashi Ono,Kazuyuki Kouno,Masayoshi Nakayama,Reiji Mochida,Yuriko HAYATA. Владелец: Panasonic Corp. Дата публикации: 2021-03-04.

Memory devices, memory systems, and related operating methods

Номер патента: US09406359B2. Автор: Dae-Seok Byeon,Hyun-Kook PARK,Yeong-Taek Lee,Chi-Weon Yoon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-08-02.

Circuit and a method of determining the resistive state of a resistive memory cell

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Nonvolatile memory device, memory system including the same and method for driving nonvolatile memory device

Номер патента: US09443586B2. Автор: Hyun-Kook PARK. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-09-13.

Integrated Circuit, Memory Cell Arrangement, Thermal Select Magneto-Resistive Memory Cell, Method of Operating a Thermal Select Magneto-Resistive Memory Cell, and Method of Manufacturing a Thermal Select Magneto-Resistive Memory Cell

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Electronic device and method for reading data stored in resistive memory cell

Номер патента: US09984748B1. Автор: Tae-hoon Kim,Seung-Hwan Lee,Hyun-Jeong Kim,Woo-Tae LEE,Myoung-Sub Kim. Владелец: SK hynix Inc. Дата публикации: 2018-05-29.

Resistive memory device and method for reading data in the resistive memory device

Номер патента: US11798621B2. Автор: Chan Kyung Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-10-24.

Sense amplifier circuit, memory device, method for determining a state value of a resistive memory cell and method for operating a memory device

Номер патента: US20190259451A1. Автор: Ulrich Loibl. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2019-08-22.

Sense amplifier circuit, memory device, method for determining a state value of a resistive memory cell and method for operating a memory device

Номер патента: US10685706B2. Автор: Ulrich Loibl. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2020-06-16.

Resistive memory device and method for reading data in the resistive memory device

Номер патента: KR20220033146A. Автор: 김찬경. Владелец: 삼성전자주식회사. Дата публикации: 2022-03-16.

Variable resistance non-volatile memory element and variable resistance non-volatile memory device using the element

Номер патента: US11889776B2. Автор: Satoru Fujii,Takumi Mikawa,Hisashi Shima,Hiroyuki Akinaga,Atsushi Himeno,Ryutaro YASUHARA,Takehide Miyazaki,Yasuhisa Naitoh,Kengo NISHIO. Владелец: Nuvoton Technology Corp Japan. Дата публикации: 2024-01-30.

Variable resistance element and memory device

Номер патента: US20180145251A1. Автор: Kazunori Harada,Takuya Hirohashi,Masumi SAITOH,Hiromichi KURIYAMA,Harumi SEKI,Yuya Matsubara. Владелец: Toshiba Memory Corp. Дата публикации: 2018-05-24.

Operation Method of Resistive Random Access Memory and Resistive Random Access Memory Device

Номер патента: US20180330788A1. Автор: HE Qian,Chen Wang,Bin Gao,Huaqiang Wu. Владелец: TSINGHUA UNIVERSITY. Дата публикации: 2018-11-15.

Variable resistance memory device and related method of operation

Номер патента: US20110228585A1. Автор: Ho Jung Kim,Deok-kee Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2011-09-22.

Variable resistance memory with lattice array using enclosing transistors

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Memory device and method of manufacturing the same

Номер патента: US09941333B2. Автор: Ji-Hyun Jeong,Gwan-Hyeob Koh,Dae-Hwan Kang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-04-10.

Resistive memory device and method of operating the resistive memory device

Номер патента: US11804265B2. Автор: In Ku Kang. Владелец: SK hynix Inc. Дата публикации: 2023-10-31.

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Номер патента: US20240005989A1. Автор: In Ku Kang. Владелец: SK hynix Inc. Дата публикации: 2024-01-04.

Variable-resistance memory and writing method thereof

Номер патента: US09887007B1. Автор: Chia-Chen Kuo,Shyh-Shyuan Sheu. Владелец: Industrial Technology Research Institute ITRI. Дата публикации: 2018-02-06.

Resistive memory array using P-I-N diode select device and methods of fabrication thereof

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Номер патента: EP3965106A3. Автор: Jeongho Lee,Kwangjin Lee,Hee Hyun Nam,Youngkwang YOO,Jaeho SHIN. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-06-08.

Resistive memory device and method relating to a read voltage in accordance with variable situations

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Memory device and variable resistance element

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