Hybrid bonding with through substrate via (TSV)

19-09-2017 дата публикации
Номер:
US9768143B2
Контакты:
Номер заявки: 48-14-20148017
Дата заявки: 16-09-2014



A semiconductor device structure and method for forming the same are provided. The semiconductor device structure includes a first semiconductor wafer and a second semiconductor wafer bonded via a hybrid bonding structure, and the hybrid bonding structure includes a first conductive material embedded in a polymer material and a second conductive material embedded in a second polymer material. The first conductive material of the first semiconductor wafer bonded to the second conductive material of the second semiconductor wafer and the first polymer material of the first semiconductor wafer is bonded to the second polymer material of the second semiconductor wafer. The semiconductor device structure further includes at least one through substrate via (TSV) extending from a bottom surface of the second semiconductor wafer to a top surface of the first semiconductor wafer.