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Three-dimensional memory device containing a channel connection strap and method for making the same

Номер патента: US11171150B2
Опубликовано: 09-11-2021
Автор(ы): Hiroyuki Kamiya, Takashi Yuda
Принадлежит: SanDisk Technologies LLC
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Three-dimensional memory device with metal-barrier-metal word lines and methods of making the same

Номер патента: US11968826B2. Автор: Raghuveer S. Makala,Rahul Sharangpani,Ramy Nashed Bassely SAID,Senaka Kanakamedala. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-04-23.

Three dimensional memory device containing dummy word lines and p-n junction at joint region and method of making the same

Номер патента: US12035520B2. Автор: Yanli Zhang,Peng Zhang. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-07-09.

Three-dimensional memory device containing iii-v compound semiconductor channel and contacts and method of making the same

Номер патента: US20210375908A1. Автор: Raghuveer S. Makala,Peter Rabkin,Ashish Baraskar. Владелец: SanDisk Technologies LLC. Дата публикации: 2021-12-02.

Three-dimensional memory device having a multilevel drain select gate electrode and method of making thereof

Номер патента: US09972641B1. Автор: Jin Liu,Yanli Zhang,Raghuveer S. Makala,Johann Alsmeier,Murshed CHOWDHURY. Владелец: SanDisk Technologies LLC. Дата публикации: 2018-05-15.

Three-dimensional memory device including metal silicide source regions and methods for forming the same

Номер патента: WO2022093322A1. Автор: Fei Zhou,Raghuveer S. Makala,Rahul Sharangpani,Adarsh RAJASHEKHAR. Владелец: SanDisk Technologies LLC. Дата публикации: 2022-05-05.

Three-dimensional memory device including bottle-shaped memory stack structures and methods of making the same

Номер патента: WO2020060594A1. Автор: Kiyohiko Sakakibara,Zhixin Cui,Shinsuke YADA. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-03-26.

Three-dimensional memory device using epitaxial semiconductor channels and a buried source line and method of making the same

Номер патента: WO2020226702A1. Автор: Fei Zhou,Raghuveer S. Makala,Rahul Sharangpani,Adarsh RAJASHEKHAR. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-11-12.

Three-dimensional memory device with vertical semiconductor bit lines located in recesses and method of making thereof

Номер патента: US09859337B2. Автор: Abhijit Bandyopadhyay,Christopher J. Petti,Perumal Ratnam. Владелец: SanDisk Technologies LLC. Дата публикации: 2018-01-02.

Three-dimensional memory array including dual work function floating gates and method of making the same

Номер патента: US20220254798A1. Автор: Yanli Zhang,Raghuveer S. Makala,Ramy Nashed Bassely SAID,Senaka Kanakamedala,Jiahui Yuan. Владелец: SanDisk Technologies LLC. Дата публикации: 2022-08-11.

Three-dimensional memory device having pocket structure in memory string and method for forming the same

Номер патента: US12029038B2. Автор: Yonggang YANG. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-07-02.

Three-dimensional memory device with plural channels per memory opening and methods of making the same

Номер патента: US11903190B2. Автор: Yukihiro Sakotsubo. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-02-13.

Three-dimensional memory device with plural channels per memory opening and methods of making the same

Номер патента: US20220189981A1. Автор: Yukihiro Sakotsubo. Владелец: SanDisk Technologies LLC. Дата публикации: 2022-06-16.

Methods for forming three-dimensional memory device without conductor residual caused by dishing

Номер патента: US20200381452A1. Автор: Zhao Hui Tang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2020-12-03.

Channel structures for three-dimensional memory devices and methods for forming the same

Номер патента: US20230276623A9. Автор: Zhiliang Xia,Xiaoxin LIU,Xiaolong Du,Tingting Gao,Wanbo Geng,Changzhi Sun. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-08-31.

Methods for forming three-dimensional memory device without conductor residual caused by dishing

Номер патента: US20200251487A1. Автор: Zhao Hui Tang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2020-08-06.

Three-dimensional memory device including discrete charge storage elements with laterally-protruding profiles and methods of making thereof

Номер патента: US11968834B2. Автор: Fei Zhou,Raghuveer S. Makala,Ramy Nashed Bassely SAID,Senaka Kanakamedala. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-04-23.

Three-dimensional memory device including discrete charge storage elements with laterally-protruding profiles and methods of making thereof

Номер патента: WO2022186848A1. Автор: Fei Zhou,Raghuveer S. Makala,Ramy Nashed Bassely SAID,Senaka Kanakamedala. Владелец: SanDisk Technologies LLC. Дата публикации: 2022-09-09.

Three-dimensional memory devices with backside isolation structures

Номер патента: US20210118988A1. Автор: LIANG Chen,WEI Liu,Cheng GAN. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-04-22.

Three-dimensional memory device with ferroelectric material

Номер патента: US12041781B2. Автор: Yu-Ming Lin,Han-Jong Chia,Chao-I Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-16.

Three-dimensional memory device with ferroelectric material

Номер патента: US20240334708A1. Автор: Yu-Ming Lin,Han-Jong Chia,Chao-I Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-03.

Three dimensional memory and method of operating the same

Номер патента: US20190043569A1. Автор: Yao-Ting Tsai,Yu-Kai Liao,Chiang-Hung Chen,Wen Hung. Владелец: Winbond Electronics Corp. Дата публикации: 2019-02-07.

Three-dimensional memory device including metal silicide source regions and methods for forming the same

Номер патента: US20220130853A1. Автор: Fei Zhou,Raghuveer S. Makala,Rahul Sharangpani,Adarsh RAJASHEKHAR. Владелец: SanDisk Technologies LLC. Дата публикации: 2022-04-28.

A three dimensional memory device with epitaxial semiconductor pedestal for peripheral transistors

Номер патента: EP3286785A1. Автор: Zhenyu Lu,Daxin Mao,Koji Miyata,Johann Alsmeier,Andrew Lin,George Matamis,Jixin Yu,Wenguang Shi,Junichi Ariyoshi,Xiaolong Hu,Jiyin Xu. Владелец: SanDisk Technologies LLC. Дата публикации: 2018-02-28.

Three dimensional memory device with epitaxial semiconductor pedestal for peripheral transistors

Номер патента: US09449987B1. Автор: Zhenyu Lu,Daxin Mao,Koji Miyata,Johann Alsmeier,Andrew Lin,Jixin Yu,Wenguang Stephen Shi. Владелец: SanDisk Technologies LLC. Дата публикации: 2016-09-20.

Three-dimensional memory device with ferroelectric material

Номер патента: US11616080B2. Автор: Yu-Ming Lin,Han-Jong Chia,Chao-I Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-03-28.

Three-dimensional memory device containing inter-select-gate electrodes and methods of making the same

Номер патента: US20210305384A1. Автор: Masatoshi Nishikawa,Zhixin Cui,Hardwell Chibvongodze. Владелец: SanDisk Technologies LLC. Дата публикации: 2021-09-30.

Three-dimensional memory device including a string selection line gate electrode having a silicide layer

Номер патента: US20210091093A1. Автор: Kohji Kanamori,Jeehoon HAN,Seogoo KANG,Jongseon Ahn. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-03-25.

Three-dimensional memory device including a string selection line gate electrode having a silicide layer

Номер патента: US11792994B2. Автор: Kohji Kanamori,Jeehoon HAN,Seogoo KANG,Jongseon Ahn. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-10-17.

Staircase structure in three-dimensional memory device and method for forming the same

Номер патента: EP4401116A3. Автор: Zhiliang Xia,Di Wang,Zhong Zhang,Wenxi Zhou. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-09-04.

Staircase structure in three-dimensional memory device and method for forming the same

Номер патента: EP4401116A2. Автор: Zhiliang Xia,Di Wang,Zhong Zhang,Wenxi Zhou. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-07-17.

Staircase structure in three-dimensional memory device and method for forming the same

Номер патента: US20240274535A1. Автор: Zhiliang Xia,Di Wang,Zhong Zhang,Wenxi Zhou. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-08-15.

Three-dimensional memory devices

Номер патента: US12114498B2. Автор: Zhiliang Xia,Kun Zhang,Linchun Wu,Wenxi Zhou. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-10-08.

Staircase structure in three-dimensional memory device and method for forming the same

Номер патента: US12002757B2. Автор: Zhiliang Xia,Di Wang,Zhong Zhang,Wenxi Zhou. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-06-04.

Data lines in three-dimensional memory devices

Номер патента: US11830767B2. Автор: Yi Hu. Владелец: Micron Technology Inc. Дата публикации: 2023-11-28.

Staircase formation in three-dimensional memory device

Номер патента: US11961760B2. Автор: Yu Ting ZHOU. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-04-16.

Staircase formation in three-dimensional memory device

Номер патента: US20240145296A1. Автор: Yu Ting ZHOU. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-05-02.

Three-dimensional memory device with self-aligned word line contact via structures and method of making the same

Номер патента: US20240237354A1. Автор: Koichi Matsuno,Senaka Kanakamedala,Kartik SONDHI. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-07-11.

Three-dimensional memory device with self-aligned word line contact via structures and method of making the same

Номер патента: US20240179916A1. Автор: Koichi Matsuno,Kota Funayama. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-05-30.

Three-dimensional memory device with dielectric isolated via structures and methods of making the same

Номер патента: US12068249B2. Автор: Yoshitaka Otsu,Yoshiyuki KUROKO. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-08-20.

Three-dimensional memory device containing a carbon-doped source contact layer and methods for making the same

Номер патента: US20200251479A1. Автор: Kiyohiko Sakakibara,Zhixin Cui,Masaaki Higashitani,Masanori Tsutsumi. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-08-06.

Three-dimensional memory device containing annular etch-stop spacer and method of making thereof

Номер патента: US09780034B1. Автор: Zhenyu Lu,Tadashi Nakamura,Tong Zhang,Masanori Tsutsumi,Kota Funayama,Ryoichi EHARA,Youko Furihata. Владелец: SanDisk Technologies LLC. Дата публикации: 2017-10-03.

Three-dimensional memory device containing an aluminum oxide etch stop layer for backside contact structure and method of making thereof

Номер патента: US09754820B2. Автор: Rahul Sharangpani,Motoki KAWASAKI,Masanori Tsutsumi. Владелец: SanDisk Technologies LLC. Дата публикации: 2017-09-05.

Three-dimensional memory device containing oxidation-resistant contact structures and methods of making the same

Номер патента: WO2022108623A1. Автор: Shin Koyama,Eisuke Takii,Hiraku Hashimoto. Владелец: SanDisk Technologies LLC. Дата публикации: 2022-05-27.

Three-dimensional memory device containing etch-stop structures and self-aligned insulating spacers and method of making the same

Номер патента: US20230275026A1. Автор: Koichi Matsuno,Kota Funayama. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-08-31.

Three-dimensional memory device containing self-aligned lateral contact elements and methods for forming the same

Номер патента: US20220230917A1. Автор: Fumitaka Amano,Yuji TOTOKI,Shunsuke Takuma. Владелец: SanDisk Technologies LLC. Дата публикации: 2022-07-21.

Method of manufacturing three-dimensional memory device with vias connected to staircase structure

Номер патента: US12058855B2. Автор: Sung Lae OH. Владелец: SK hynix Inc. Дата публикации: 2024-08-06.

Three-dimensional memory device with dielectric isolated via structures and methods of making the same

Номер патента: US20210210503A1. Автор: James Kai,Koichi Matsuno,Johann Alsmeier,Yoshitaka Otsu,Jixin Yu. Владелец: SanDisk Technologies LLC. Дата публикации: 2021-07-08.

Inter-plane offset in backside contact via structures for a three-dimensional memory device

Номер патента: US09917093B2. Автор: Fumitoshi Ito,Tuan Pham,Masaaki Higashitani,Jayavel Pachamuthu,Cheng-Chung Chu. Владелец: SanDisk Technologies LLC. Дата публикации: 2018-03-13.

Three-dimensional memory device including contact via structures for multi-level stepped surfaces and methods for forming the same

Номер патента: US20220059454A1. Автор: Akihiro Shimada,Keisuke Shigemura,Haruki SUWA. Владелец: SanDisk Technologies LLC. Дата публикации: 2022-02-24.

Three-dimensional memory device with dielectric wall support structures and method of forming the same

Номер патента: WO2022072005A1. Автор: Tomohiro Kubo. Владелец: SanDisk Technologies LLC. Дата публикации: 2022-04-07.

Three-dimensional memory device and manufacturing method thereof

Номер патента: US20230317609A1. Автор: Jin HO KIM,Chan Ho YOON. Владелец: SK hynix Inc. Дата публикации: 2023-10-05.

Three-dimensional memory device and manufacturing method thereof

Номер патента: US11955429B2. Автор: Jin HO KIM,Chan Ho YOON. Владелец: SK hynix Inc. Дата публикации: 2024-04-09.

Three-dimensional memory device with peripheral circuit located over support pillar array and method of making thereof

Номер патента: WO2022182383A1. Автор: Koichi Nakamura,Sadao FUKUNO,Shunsuke Ohya. Владелец: SanDisk Technologies LLC. Дата публикации: 2022-09-01.

Three-dimensional memory device and manufacturing method thereof

Номер патента: US20240015962A1. Автор: Sung Lae OH. Владелец: SK hynix Inc. Дата публикации: 2024-01-11.

Three-dimensional memory device with vias connected to staircase structure

Номер патента: US11943915B2. Автор: Sung Lae OH. Владелец: SK hynix Inc. Дата публикации: 2024-03-26.

Three-dimensional memory device and manufacturing method thereof

Номер патента: US20210366919A1. Автор: Jin HO KIM,Sang Hyun Sung,Sung Lae OH. Владелец: SK hynix Inc. Дата публикации: 2021-11-25.

Three-dimensional memory device and manufacturing method thereof

Номер патента: US11742288B2. Автор: Sang Hyun Sung,Sung Lae OH. Владелец: SK hynix Inc. Дата публикации: 2023-08-29.

Memory cell formation in three dimensional memory arrays using atomic layer deposition

Номер патента: US20230354721A1. Автор: Enrico Varesi,Lorenzo Fratin,Paolo Fantini,Stephen W. Russell. Владелец: Micron Technology Inc. Дата публикации: 2023-11-02.

Architecture of three-dimensional memory device and methods regarding the same

Номер патента: US12068192B2. Автор: Enrico Varesi,Lorenzo Fratin,Paolo Fantini. Владелец: Micron Technology Inc. Дата публикации: 2024-08-20.

Three-dimensional memory devices having dummy channel structures and methods for forming the same

Номер патента: US11985824B2. Автор: Jianzhong Wu,Jingjing Geng. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-05-14.

Three-dimensional memory device wordlines with reduced blocking layer damage

Номер патента: US20240237337A9. Автор: Mahendra Pakala,Jaesoo AHN,Jose Alexandro Romero,Kunal Bhatnagar. Владелец: Applied Materials Inc. Дата публикации: 2024-07-11.

Three-dimensional memory device wordlines with reduced blocking layer damage

Номер патента: WO2024086177A1. Автор: Mahendra Pakala,Jaesoo AHN,Jose Alexandro Romero,Kunal Bhatnagar. Владелец: Applied Materials, Inc.. Дата публикации: 2024-04-25.

Three-dimensional memory device wordlines with reduced blocking layer damage

Номер патента: US20240138147A1. Автор: Mahendra Pakala,Jaesoo AHN,Jose Alexandro Romero,Kunal Bhatnagar. Владелец: Applied Materials Inc. Дата публикации: 2024-04-25.

Substrate cleaning composition, method for cleaning substrate using the same, and method for fabricating semiconductor device using the same

Номер патента: US12046464B2. Автор: Hyun Jin Kim,Jong Kyoung Park,Hoon Han,Hyo San LEE,Mi Hyun Park,Ga Young SONG,Jung Youl LEE,Han Sol LIM. Владелец: Dongjin Semichem Co Ltd. Дата публикации: 2024-07-23.

Substrate cleaning composition, method for cleaning substrate using the same, and method for fabricating semiconductor device using the same

Номер патента: US20220336206A1. Автор: Hyun Jin Kim,Jong Kyoung Park,Hoon Han,Hyo San LEE,Mi Hyun Park,Ga Young SONG,Jung Youl LEE,Han Sol LIM. Владелец: Dongjin Semichem Co Ltd. Дата публикации: 2022-10-20.

Cleaning composition for removing residues on surface, method of cleaning metal-containing film by using the same, and method of manufacturing semiconductor device by using the same

Номер патента: US20230383218A1. Автор: Hyosan Lee,Kyuyoung HWANG,Jiwon Kim,Cheol Ham,Byoungki CHOI,Sungmin Kim,Byungjoon KANG,Jungmin Oh,Hwang Suk KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-11-30.

Three-dimensional memory device with divided drain select gate lines and method for forming the same

Номер патента: WO2023108330A1. Автор: Yan Gu,Zhiliang Xia,Di Wang,Wenxi Zhou,Zongliang Huo. Владелец: Yangtze Memory Technologies Co., Ltd.. Дата публикации: 2023-06-22.

Three-dimensional memory device containing ferroelectric memory elements encapsulated by transition metal nitride materials and method of making thereof

Номер патента: US20210050371A1. Автор: Fei Zhou,Raghuveer S. Makala,Rahul Sharangpani,Seung-Yeul Yang,Adarsh RAJASHEKHAR. Владелец: SanDisk Technologies LLC. Дата публикации: 2021-02-18.

Three dimensional memory and methods of forming the same

Номер патента: US09780115B2. Автор: John K. Zahurak,Sanh D. Tang. Владелец: Micron Technology Inc. Дата публикации: 2017-10-03.

Three dimensional memory and methods of forming the same

Номер патента: US09379005B2. Автор: John K. Zahurak,Sanh D. Tang. Владелец: Micron Technology Inc. Дата публикации: 2016-06-28.

Three-dimensional memory devices and methods for forming the same

Номер патента: EP4285413A1. Автор: Zhiliang Xia,Kun Zhang,Wenxi Zhou,Zongliang Huo. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-12-06.

Self-aligned contacts in three-dimensional memory devices and methods for forming the same

Номер патента: US12074105B2. Автор: Juan Tang,Hongbin Zhu,Zi Qun HUA. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-08-27.

Channel structures having protruding portions in three-dimensional memory device and method for forming the same

Номер патента: US11925019B2. Автор: Xiaoxin LIU,Lei Xue,Tingting Gao,Wanbo Geng. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-03-05.

Methods for forming three-dimensional memory devices with channel structures having plum blossom shape

Номер патента: US11877449B2. Автор: Xiaoxin LIU,Weihua Cheng,Lei Xue,Tingting Gao,Wanbo Geng. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-01-16.

Three-dimensional memory device including discrete charge storage elements and methods of forming the same

Номер патента: US20220093644A1. Автор: Raghuveer S. Makala,Rahul Sharangpani,Ramy Nashed Bassely SAID,Senaka Kanakamedala,Kartik SONDHI. Владелец: SanDisk Technologies LLC. Дата публикации: 2022-03-24.

Multi-tier three-dimensional memory devices including vertically shared source lines and method of making thereof

Номер патента: US09935050B2. Автор: Zhenyu Lu,Yuki Mizutani,Mohan DUNGA. Владелец: SanDisk Technologies LLC. Дата публикации: 2018-04-03.

Three-dimensional memory devices and fabrication methods thereof

Номер патента: US20210104547A1. Автор: Li Hong XIAO. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-04-08.

Three-dimensional memory devices and fabrication methods thereof

Номер патента: US20200312870A1. Автор: Li Hong XIAO. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2020-10-01.

Three-dimensional memory device with ferroelectric material

Номер патента: US20210375929A1. Автор: Chun-Chieh Lu,Yu-Ming Lin,Sai-Hooi Yeong,Han-Jong Chia,Bo-Feng YOUNG,Chi On Chui,Chenchen Jacob WANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-12-02.

Three-dimensional memory device with divided drain select gate lines and method for forming the same

Номер патента: EP4218056A1. Автор: Yan Gu,Zhiliang Xia,Di Wang,Wenxi Zhou,Zongliang Huo. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-08-02.

Three-dimensional memory devices and methods for forming the same

Номер патента: US20210098484A1. Автор: Hongbin Zhu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-04-01.

Three-dimensional memory devices, systems, and methods for forming the same

Номер патента: US20240040789A1. Автор: XIN Wang,Wenshan Xu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-02-01.

Three-dimensional memory device and fabrication method for improved yield and reliability

Номер патента: US20240179901A1. Автор: Zhiliang Xia,Kun Zhang,Linchun Wu,Wenxi Zhou,Zongliang Huo,Yuhui HAN,Changzhi Sun. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-05-30.

Method for forming channel hole plug of three-dimensional memory device

Номер патента: US11943928B2. Автор: Qian Tao,Zhenyu Lu,Jun Chen,Meng Wang,Yushi Hu,Li Hong XIAO,LongDong LIU. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-03-26.

Three-dimensional memory device

Номер патента: US11832446B2. Автор: Hock Chun Chin. Владелец: United Microelectronics Corp. Дата публикации: 2023-11-28.

Three-dimensional memory device

Номер патента: US20220077179A1. Автор: Hock Chun Chin. Владелец: United Microelectronics Corp. Дата публикации: 2022-03-10.

Three dimensional memory and methods of forming the same

Номер патента: US20210183887A1. Автор: John K. Zahurak,Sanh D. Tang. Владелец: Micron Technology Inc. Дата публикации: 2021-06-17.

Three dimensional memory and methods of forming the same

Номер патента: EP4109537A2. Автор: John K. Zahurak,Sanh D. Tang. Владелец: Micron Technology Inc. Дата публикации: 2022-12-28.

Three dimensional memory and methods of forming the same

Номер патента: EP2586060A2. Автор: John K. Zahurak,Sanh D. Tang. Владелец: Micron Technology Inc. Дата публикации: 2013-05-01.

Three dimensional memory and methods of forming the same

Номер патента: US20200119046A1. Автор: John K. Zahurak,Sanh D. Tang. Владелец: Micron Technology Inc. Дата публикации: 2020-04-16.

Three dimensional memory and methods of forming the same

Номер патента: US20230413559A1. Автор: John K. Zahurak,Sanh D. Tang. Владелец: Micron Technology Inc. Дата публикации: 2023-12-21.

Three-dimensional memory device including dipole-containing blocking dielectric layer and methods for forming the same

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Multi tier three-dimensional memory devices including vertically shared bit lines

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Three-dimensional memory device containing word line contacts which extend through drain-select-level isolation structures and methods of making the same

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Three-dimensional memory array with dual-level peripheral circuits and methods for forming the same

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Three-dimensional memory device containing dual-depth drain-select-level isolation structures and methods for forming the same

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Three-dimensional memory device containing dual-depth drain-select-level isolation structures and methods for forming the same

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Three-dimensional memory device containing bridges for enhanced structural support and methods of forming the same

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Bonded three-dimensional memory devices and methods of making the same by replacing carrier substrate with source layer

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Three-dimensional memory device containing bridges for enhanced structural support and methods of forming the same

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Three-dimensional memory device with plural channels per memory opening and methods of making the same

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Three-dimensional memory array with dual-level peripheral circuits and methods for forming the same

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Three-dimensional memory array with local line selector

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Three-dimensional memory array with local line selector

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Three-dimensional memory array with local line selector

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Word line decoder circuitry under a three-dimensional memory array

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Three-dimensional memory array with local line selector

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Word line decoder circuitry under a three-dimensional memory array

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Three-dimensional memory device including backside trench support structures and methods of forming the same

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Three-dimensional memory device with staircase etch stop structures and methods for forming the same

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Self-selecting local bit line for a three-dimensional memory array

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Three-dimensional memory device with a columnar memory opening arrangement and method of making thereof

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Three-dimensional memory device having support-die-assisted source power distribution and method of making thereof

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Three-dimensional memory device including composite backside metal fill structures and methods for forming the same

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Three-dimensional memory devices with lateral block isolation structures and methods of forming the same

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Integrated circuit including three-dimensional memory device

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Integrated circuit including three-dimensional memory device

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Three-dimensional memory containing a staircase with dummy steps and method of making thereof with step length control

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Word line structures for three-dimensional memory arrays

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Word line structures for three-dimensional memory arrays

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Word line structures for three-dimensional memory arrays

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Three-dimensional memory devices and fabricating methods thereof

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Decoder architectures for three-dimensional memory devices

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Three-dimensional memory

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Word line decoder circuitry under a three-dimensional memory array

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Word line decoder circuitry under a three-dimensional memory array

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Word line decoder circuitry under a three-dimensional memory array

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Three-dimensional memory device

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Support structures for three dimensional memory arrays

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Semiconductor device, three-dimensional memory and fabrication method of semiconductor device

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Three-dimensional memory device including an inter-tier etch stop layer and method of making the same

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Three-dimensional memory device and method of making thereof using double pitch word line formation

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Three dimensional memory device having isolated periphery contacts through an active layer exhume process

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Three-dimensional memory devices with deep isolation structures

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Three-dimensional memory device with drain-select-level isolation structures and method of making the same

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Three-dimensional memory device with self-aligned word line contact via structures and method of making the same

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Three-dimensional memory devices and fabricating methods thereof

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Three-dimensional memory device including low-k drain-select-level isolation structures and methods of forming the same

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Three-dimensional memory device containing bit line switches

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Method for fabricating three-dimensional memory

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Three-dimensional memory device with word-line etch stop liners and method of making thereof

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Trench structures for three-dimensional memory devices

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Three-dimensional memory and fabricating method thereof

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Twin channel access device for vertical three-dimensional memory

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Twin channel access device for vertical three-dimensional memory

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Three-dimensional memory and formation method thereof

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Three-dimensional memory device and method

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Resistive three-dimensional memory device with heterostructure semiconductor local bit line and method of making thereof

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Wiring line structure of three-dimensional memory device

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Local contacts of three-dimensional memory devices and methods for forming the same

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Three-dimensional memory device and method for forming the same

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Three-dimensional memory device with embedded dynamic random-access memory

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Three-Dimensional Memory Device and Method

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Three-dimensional memory device and method

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Local contacts of three-dimensional memory devices and methods for forming the same

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Local contacts of three-dimensional memory devices and methods for forming the same

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Local contacts of three-dimensional memory devices and methods for forming the same

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Three-dimensional memory devices having isolation structure for source select gate line and methods for forming the same

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Three-dimensional memory devices having isolation structure for source select gate line and methods for forming the same

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Three-dimensional memory device having staircase structure and method for forming the same

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Three-dimensional memory device and methods for forming the same

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Three-dimensional memory devices and fabricating methods thereof

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Three-dimensional memory device and manufacturing method thereof

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Method for Forming Hole Pattern and Method for Manufacturing TFT Display Using the Same

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Three-dimensional memory device containing source select gate electrodes with enhanced electrical isolation

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Three-dimensional memory device having a heterostructure quantum well channel

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Three-dimensional memory device with separated source-side lines and method of making the same

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Three-dimensional memory device employing direct source contact and hole current detection and method of making the same

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Three-dimensional memory device employing direct source contact and hole current detection and method of making the same

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On-pitch drain select level isolation structure for three-dimensional memory device and method of making the same

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On-pitch drain select level isolation structure for three-dimensional memory device and method of making the same

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On-pitch drain select level isolation structure for three-dimensional memory device and method of making the same

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Three dimensional memory device containing truncated channels and method of operating the same with different erase voltages for different bit lines

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Three-dimensional memory device including a drain contact etch-stop dielectric layer and methods for forming the same

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Manufacturing Methods of JFET-Type Compact Three-Dimensional Memory

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Three dimensional memory structure

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Three dimensional memory structure

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Three dimensional memory structure

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Three-dimensional memory device having a heterostructure quantum well channel

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Techniques for concurrently-formed cavities in three-dimensional memory arrays

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Three dimensional memory device

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Three-dimensional memory device and manufacturing method thereof

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Three-dimensional memory device and manufacturing method thereof

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Three-dimensional memory devices and methods for forming the same

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Multi-deck three-dimensional memory devices and methods for forming the same

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Multi-deck three-dimensional memory devices and methods for forming the same

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Three-dimensional memory device with source contacts connected by an adhesion layer and methods for forming the same

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Three-dimensional memory device with source contacts connected by an adhesion layer and methods for forming the same

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Three-dimensional memory devices and methods for forming the same

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Three-dimensional memory device with word lines extending through sub-arrays, semiconductor device including the same and method for manufacturing the same

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Staircase structure in three-dimensional memory device and method for forming the same

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Three-dimensional memory device containing multi-level word line contact wells and methods for manufacturing the same

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Three-dimensional memory device containing multi-level word line contact wells and methods for manufacturing the same

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Three-dimensional memory device including laterally separated source lines and method of making the same

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Three-dimensional memory device with backside interconnect structures

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Structures and methods for reducing stress in three-dimensional memory device

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Three-dimensional memory structure fabrication using channel replacement

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Capacitor in a three-dimensional memory structure

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Three-dimensional memory devices and fabricating methods thereof

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Three-dimensional memory devices

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Three-dimensional memory device and method of making thereof by non-conformal selective deposition of insulating spacers in a memory opening

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Capacitor in a three-dimensional memory structure

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Three-dimensional memory device containing doped source-channel interface structure and method of making the same

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Three-dimensional memory device with backside interconnect structures

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Three-dimensional memory device having source-select-gate cut structures and methods for forming the same

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Three-dimensional memory devices having polysilicon layer and bonded semiconductor structures and methods for forming the same

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Three-dimensional memory device having a shielding layer and method for forming the same

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Three-dimensional memory device with separated contact regions and methods for forming the same

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Three-dimensional memory devices and methods for forming the same

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Three-dimensional memory devices and methods for forming the same

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Three-dimensional memory device and method of making thereof including expanded support openings and double spacer word line contact formation

Номер патента: US20240250023A1. Автор: Koichi Matsuno,Johann Alsmeier,Jixin Yu,Seyyed Ehsan Esfahani Rashidi,Ruogu Matthew ZHU. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-07-25.

Three-dimensional memory devices and methods for forming the same

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Three-dimensional memory devices and methods for forming the same

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Three-dimensional memory devices and fabricating methods thereof

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Three-dimensional memory devices and methods for forming the same

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Three-dimensional memory device including laterally separated source lines and method of making the same

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Three-dimensional memory device with word line side-contact via structures and methods for forming the same

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Three-dimensional memory devices and methods for forming the same

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Three-dimensional memory devices and fabricating methods thereof

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Three-dimensional memory device having source-select-gate cut structures and methods for forming the same

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Three-dimensional memory device with high mobility channels and nickel aluminum silicide or germanide drain contacts and method of making the same

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Three-dimensional memory devices and methods for forming the same

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Three-dimensional memory device having source-select-gate cut structures and methods for forming the same

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Three-dimensional memory devices and methods for forming the same

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Three-dimensional memory devices and methods for forming the same

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Staircase connection structure for three-dimensional memory devices

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Three-dimensional memory devices

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