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  • Double height cell regions, semiconductor device having the same, and method of generating a layout diagram corresponding to the same

Double height cell regions, semiconductor device having the same, and method of generating a layout diagram corresponding to the same

Номер патента: US10971586B2
Опубликовано: 06-04-2021
Автор(ы): Hui-Zhong ZHUANG, Jung-Chan YANG, Lee-Chung Lu, Li-Chun Tien, Ting-Wei Chiang
Принадлежит: Taiwan Semiconductor Manufacturing Co TSMC Ltd
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