METHOD OF MANUFACTURING SUBSTRATE AND SEMICONDUCTOR DEVICE.

METHOD OF MANUFACTURING SUBSTRATE AND SEMICONDUCTOR DEVICE

Номер патента: US20190051533A1
Опубликовано: 14-02-2019
Автор(ы): Fujii Kenji, Fujita Hirohisa, Hashimoto Yusuke, Ibe Satoshi, Oya Shuhei, Watanabe Makoto
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Рисунок 1. Взаимосвязь патентов (ближайшие 20).

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Номер патента: EP1447841A4. Автор: Nobuo Kawahashi,Kou Hasegawa,Hiroshi Shiho. Владелец: JSR Corp. Дата публикации: 2007-08-15.

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Номер патента: US20150294912A1. Автор: Wang Wenhui,LiCausi Nicholas V.,Xie Ruilong,Kamineni Vimal K.,Wedlake Michael,Cantone Jason R.,Bello Abner F.. Владелец: . Дата публикации: 2015-10-15.

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Номер патента: US9093302B2. Автор: Michael Wedlake,Ruilong Xie,Wenhui Wang,Vimal K. Kamineni,Abner F. Bello,Nicholas V. LiCausi,Jason R. Cantone. Владелец: Globalfoundries Inc. Дата публикации: 2015-07-28.

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Номер патента: GB0011692D0. Автор: . Владелец: NEC Corp. Дата публикации: 2000-07-05.

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Номер патента: US20150108549A1. Автор: James R. Elliott,Qizhi Liu,John J. Benoit. Владелец: International Business Machines Corp. Дата публикации: 2015-04-23.

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Номер патента: US20010018256A1. Автор: Mitsuru Nishitsuji,Katsuhiko Kawashima,Tsuyoshi Tanaka,Yoshihara Anda. Владелец: Individual. Дата публикации: 2001-08-30.

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Номер патента: US20070105343A1. Автор: Tomoo Hayashi,Motoi Nezu. Владелец: Tokyo Seimitsu Co Ltd. Дата публикации: 2007-05-10.

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Номер патента: TW200725722A. Автор: Tomoo Hayashi,Motoi Nezu. Владелец: Tokyo Seimitsu Co Ltd. Дата публикации: 2007-07-01.

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Номер патента: CN107112228A. Автор: 荒桥知未. Владелец: Furukawa Electric Co Ltd. Дата публикации: 2017-08-29.

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Номер патента: EP1447841A1. Автор: Nobuo c/o JSR Corporation Kawahashi,Kou c/o Jsr Corporation Hasegawa,Hiroshi c/o JSR Corporation Shiho. Владелец: JSR Corp. Дата публикации: 2004-08-18.

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Номер патента: US20150187566A1. Автор: Choi Yoo-Jeong,SONG Hyun-Ji,KIM Yun-Jun,MOON Joon-Young,PARK Yu-Shin,PARK You-Jung,SHIN Seung-Wook,YOON Yong-Woon,LEE Chung-Heon. Владелец: . Дата публикации: 2015-07-02.

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Номер патента: FR2499726A1. Автор: Yoshihiko Mizushima,Akira Yoshikawa,Akitsu Takeda,Osamu Ochi,Tomoko Hisaki. Владелец: Nippon Telegraph and Telephone Corp. Дата публикации: 1982-08-13.

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Номер патента: TWI589394B. Автор: 沈世豪,依拉維尼寒森Ｇ,許昆,史威克柏格斯勞Ａ,卡爾森伊格馬,涂文強,劉子宇,班尼特杜里Ｅ. Владелец: 應用材料股份有限公司. Дата публикации: 2017-07-01.

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Номер патента: JP7070437B2. Автор: 勉堀,圭司和田,洋典伊東. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2022-05-18.

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Номер патента: US20160099170A1. Автор: Seok-Won Lee,Dongseog EUN,Joonhee Lee,Young-Ho Lee,Yoocheol Shin. Владелец: Individual. Дата публикации: 2016-04-07.

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Номер патента: US20200194460A1. Автор: Kui Gong. Владелец: Hefei BOE Optoelectronics Technology Co Ltd. Дата публикации: 2020-06-18.

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Номер патента: US20070072424A1. Автор: Jung-hyun Lee,Sang-Bong Bang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2007-03-29.

Method of reducing defects in anti-reflective coatings and semiconductor structures fabricated thereby

Номер патента: US6225671B1. Автор: Zhiping Yin. Владелец: Micron Technology Inc. Дата публикации: 2001-05-01.

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Номер патента: US20100233881A1. Автор: Chung-Chiang Min,Chang-Yao Hsieh. Владелец: Nanya Technology Corp. Дата публикации: 2010-09-16.

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Номер патента: US20060040056A1. Автор: Gurtej Sandhu. Владелец: Individual. Дата публикации: 2006-02-23.

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Номер патента: US20120021610A1. Автор: Gurtej S. Sandhu. Владелец: Micron Technology Inc. Дата публикации: 2012-01-26.

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Номер патента: US20110294297A1. Автор: Mitsunari Sukekawa. Владелец: Elpida Memory Inc. Дата публикации: 2011-12-01.

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Номер патента: US20220301933A1. Автор: John Cooper,Michael KNABL,Matic KRIVEC,Andreas Kitzler,Daniel Pieber,Jakob Simon Dohr. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2022-09-22.

Method of isolating transistors using LOW-K dielectrics and resultant semiconductor device

Номер патента: TW395012B. Автор: Howard L Tigelaar. Владелец: Texas Instruments Inc. Дата публикации: 2000-06-21.

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Номер патента: KR100273140B1. Автор: 이화성,안병태,백종태. Владелец: 정선종. Дата публикации: 2001-01-15.

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Номер патента: KR100546296B1. Автор: 이재훈,남궁현. Владелец: 삼성전자주식회사. Дата публикации: 2006-01-26.

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Номер патента: US6245631B1. Автор: Gurtej S. Sandhu,Vishnu K. Agarwal,Ravi Iyer. Владелец: Micron Technology Inc. Дата публикации: 2001-06-12.

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Номер патента: US20200043732A1. Автор: Chun-Sheng Liang,Hsin-Che Chiang,Kuo-Hua Pan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-02-06.

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Номер патента: US20190355635A1. Автор: Kimura Noriyuki. Владелец: . Дата публикации: 2019-11-21.

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Номер патента: KR100546358B1. Автор: 황인석,고용선,윤병문,이원준. Владелец: 삼성전자주식회사. Дата публикации: 2006-01-26.

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Номер патента: US20160099170A1. Автор: Lee Seok-Won,Lee Young-Ho,SHIN Yoocheol,Eun Dongseog,Lee Joonhee. Владелец: . Дата публикации: 2016-04-07.

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Номер патента: KR100928097B1. Автор: 탁기덕. Владелец: 동부일렉트로닉스 주식회사. Дата публикации: 2009-11-24.

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Номер патента: US20050158664A1. Автор: Yu-Liang Lin,Henry Lo,Mei-Sheng Zhou,Ping Chuang,Joshua Tseng,Hung-Jung Tu,Ching-Ya Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2005-07-21.

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Номер патента: KR100323868B1. Автор: 김선우,김한민. Владелец: 박종섭. Дата публикации: 2002-03-08.

Method of forming dielectric with air gaps for use in semiconductor devices

Номер патента: US9876075B2. Автор: Chih-Chao Yang,Oscar van der Straten,Alexander Reznicek,Praneet Adusumilli. Владелец: International Business Machines Corp. Дата публикации: 2018-01-23.

Method of forming an element isolation insulating film in a semiconductor device

Номер патента: KR100197647B1. Автор: 이일호. Владелец: 현대전자산업주식회사. Дата публикации: 1999-06-15.

METHOD OF PRODUCING ARRAY SUBSTRATE, ARRAY SUBSTRATE, AND DISPLAY APPARATUS

Номер патента: US20200194460A1. Автор: GONG Kui. Владелец: . Дата публикации: 2020-06-18.

Method of manufacturing a semiconductor integrated circuit and semiconductor integrated circuit

Номер патента: US20070254426A1. Автор: Yoshifumi Yoshida,Miwa Wake. Владелец: Individual. Дата публикации: 2007-11-01.

Method of manufacturing a semiconductor integrated circuit and semiconductor integrated circuit

Номер патента: US20030129792A1. Автор: Yoshifumi Yoshida,Miwa Wake. Владелец: Individual. Дата публикации: 2003-07-10.

Method of manufacturing a semiconductor integrated circuit and semiconductor integrated circuit

Номер патента: US6713325B2. Автор: Yoshifumi Yoshida,Miwa Wake. Владелец: Seiko Instruments Inc. Дата публикации: 2004-03-30.

Growth inhibitor for forming thin film, method of forming thin film using growth inhibitor, and semiconductor substrate fabricated by method

Номер патента: US20230257881A1. Автор: Jin Hee Kim,Seung Hyun Lee,Jong Moon Kim,Chang Bong Yeon,Jae Sun Jung,Seok Jong Lee. Владелец: Soulbrain Co Ltd. Дата публикации: 2023-08-17.

Method of manufacturing semiconductor package substrate and semiconductor package substrate manufactured using the same

Номер патента: US11876012B2. Автор: Sung Il Kang,In Seob BAE,Jea Won KIM. Владелец: Haesung DS Co Ltd. Дата публикации: 2024-01-16.

Method of forming via hole, array substrate and method of forming the same and display device

Номер патента: US20180233379A1. Автор: Zhidong Yuan. Владелец: Hefei Xinsheng Optoelectronics Technology Co Ltd. Дата публикации: 2018-08-16.

Preparation method of poly-silicon TFT array substrate and array substrate thereof

Номер патента: US09653496B2. Автор: Jing NIU,Zhijun LV,Fangzhen Zhang,Shuang Sun. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2017-05-16.

Method of manufacturing buried word line structure and semiconductor memory thereof

Номер патента: US11889678B2. Автор: Jian Yang. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-01-30.

Method of manufacturing a semiconductor integrated circuit and semiconductor integrated circuit

Номер патента: USRE42223E1. Автор: Yoshifumi Yoshida,Miwa Wake. Владелец: Seiko Instruments Inc. Дата публикации: 2011-03-15.

Method of manufacturing a semiconductor integrated circuit and semiconductor integrated circuit

Номер патента: US20040191967A1. Автор: Yoshifumi Yoshida,Miwa Wake. Владелец: Seiko Instruments Inc. Дата публикации: 2004-09-30.

Method of forming a titanium silicide film involved in a semiconductor device

Номер патента: US5543359A. Автор: Tadahiko Horiuchi. Владелец: NEC Corp. Дата публикации: 1996-08-06.

Growth inhibitor for forming thin film, method of forming thin film using growth inhibitor, and semiconductor substrate fabricated by method

Номер патента: US20230313372A1. Автор: Jin Hee Kim,Seung Hyun Lee,Jong Moon Kim,Chang Bong Yeon,Jae Sun Jung,Seok Jong Lee. Владелец: Soulbrain Co Ltd. Дата публикации: 2023-10-05.

Method of forming a shallow trench isolation structure in a semiconductor device

Номер патента: US7265026B2. Автор: Chee Hong Choi. Владелец: Dongbu Electronics Co Ltd. Дата публикации: 2007-09-04.

Through electrode substrate, method of manufacturing through electrode substrate, and mounting substrate

Номер патента: US11810820B2. Автор: Shinji Maekawa,Masaaki Asano,Hiroshi Kudo,Takamasa Takano,Hiroshi Mawatari. Владелец: DAI NIPPON PRINTING CO LTD. Дата публикации: 2023-11-07.

Methods of forming conductive vias through substrates, and structures and assemblies resulting therefrom

Номер патента: US8183151B2. Автор: Rickie C. Lake. Владелец: Micron Technology Inc. Дата публикации: 2012-05-22.

Method of hybrid packaging a lead frame based multi-chip semiconductor device with multiple interconnecting structures

Номер патента: US9425181B2. Автор: Yan Huo,Jun Lu,Hamza Yilmaz,Peter Wilson,Yan Xun Xue,Zhiqiang Niu,Ming-Chen Lu. Владелец: ALPHA AND OMEGA SEMICONDUCTOR INC. Дата публикации: 2016-08-23.

Method of Hybrid Packaging a Lead Frame Based Multi-Chip Semiconductor Device with Multiple Interconnecting Structures

Номер патента: US20150236005A1. Автор: Yan Huo,Jun Lu,Hamza Yilmaz,Peter Wilson,Yan Xun Xue,Zhiqiang Niu,Ming-Chen Lu. Владелец: ALPHA AND OMEGA SEMICONDUCTOR INC. Дата публикации: 2015-08-20.

Method of Manufacturing Array Substrate and Method of Manufacturing Display Device

Номер патента: US20190027512A1. Автор: Qi Yao,Haixu Li,Zhanfeng CAO. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2019-01-24.

Capacitor, method of manufacturing capacitor, capacitor manufacturing apparatus, and semiconductor memory device

Номер патента: US20090045485A1. Автор: Toshiyuki Hirota. Владелец: Elpida Memory Inc. Дата публикации: 2009-02-19.

Semiconductor Device Manufacturing Methods and Methods of Forming Insulating Material Layers

Номер патента: US20130043512A1. Автор: Neng-Kuo Chen,Sey-Ping Sun,Clement Hsingjen Wann,Gin-Chen Huang,Tsai-fu Hsiao,Ching-Hong Jiang,Hongfa Luan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2013-02-21.

Semiconductor device manufacturing methods and methods of forming insulating material layers

Номер патента: US09607826B2. Автор: Neng-Kuo Chen,Sey-Ping Sun,Clement Hsingjen Wann,Gin-Chen Huang,Tsai-fu Hsiao,Ching-Hong Jiang,Hongfa Luan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-03-28.

Apparatus of manufacturing a semiconductor capacitor, method of manufacturing the capacitor, the capacitor and semiconductor memory device having the capacitor

Номер патента: KR100246967B1. Автор: 임태진,양창집,박태명. Владелец: 윤종용. Дата публикации: 2000-03-15.

MICRO-PATTERN FORMING METHOD, CAPACITOR AND METHOD OF MANUFACTURING THE SAME, SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC SYSTEM INCLUDING SEMICONDUCTOR DEVICE

Номер патента: US20200152638A1. Автор: KIM Jong-hyuk,Kim Jae-hee,HA Soon-mok,HWANG Chan. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2020-05-14.

MICRO-PATTERN FORMING METHOD, CAPACITOR AND METHOD OF MANUFACTURING THE SAME, SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC SYSTEM INCLUDING SEMICONDUCTOR DEVICE

Номер патента: US20180175043A1. Автор: KIM Jong-hyuk,Kim Jae-hee,HA Soon-mok,HWANG Chan. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2018-06-21.

Semiconductor device

Номер патента: US20150179813A1. Автор: Hidekazu Miyairi,Junya Maruyama,Akihisa Shimomura,Yasuhiro Jinbo,Fumito Isaka. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2015-06-25.

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Номер патента: US20120007078A1. Автор: Hidekazu Miyairi,Junya Maruyama,Akihisa Shimomura,Yasuhiro Jinbo,Fumito Isaka. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2012-01-12.

Method of forming an oxide semiconductor device and method of manufacturing a display device including an oxide semiconductor device

Номер патента: KR102210672B1. Автор: 김현식,김현재,안병두,모연곤,임지훈,김연홍. Владелец: 연세대학교 산학협력단. Дата публикации: 2021-02-04.

The manufacturing method of gas supply nozzle, substrate processing device and semiconductor devices

Номер патента: CN109943827A. Автор: 赤江尚德,高木康祐,山腰莉早,南政克,笹岛亮太,小仓慎太郎,藤野敏树,寺崎昌人. Владелец: INTERNATIONAL ELECTRIC CO Ltd. Дата публикации: 2019-06-28.

Method of producing oxide dielectric element, and memory and semiconductor device using the element

Номер патента: US6548342B1. Автор: Takaaki Suzuki,Toshihide Nabatame,Kazutoshi Higashiyama. Владелец: HITACHI LTD. Дата публикации: 2003-04-15.

Method of fabricating nitrogen-containing gate dielectric layer and semiconductor device

Номер патента: US20060148179A1. Автор: Michael Chan,Yu-Ren Wang,Ying-Wei Yen. Владелец: United Microelectronics Corp. Дата публикации: 2006-07-06.

Method of fabricating nitrogen-containing gate dielectric layer and semiconductor device

Номер патента: US7312139B2. Автор: Michael Chan,Yu-Ren Wang,Ying-Wei Yen. Владелец: United Microelectronics Corp. Дата публикации: 2007-12-25.

Method of manufacturing an aluminum oxide film in a semiconductor device

Номер патента: US20010053615A1. Автор: Chan Lim. Владелец: Hyundai Electronics Industries Co Ltd. Дата публикации: 2001-12-20.

Method of controlling photoresist stripping process and regenerating photoresist stripper composition based on near infrared spectrometer

Номер патента: EP1285312A1. Автор: Jong-min Kim,Tae-Joon Park,Mi-Sun Park,Yoon-Gil Yim,Cheol-Woo Kang. Владелец: Dongjin Semichem Co Ltd. Дата публикации: 2003-02-26.

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Номер патента: CN102386190A. Автор: 金东贤,梁松里,权五益,郑丞弼,赵哄. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2012-03-21.

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Номер патента: US20130228903A1. Автор: Gerhard Schmidt,Josef Bauer. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2013-09-05.

Semiconductor thin film, method of producing the same, apparatus for producing the same, semiconductor device and method of producing the same

Номер патента: EP1049144A1. Автор: Yoshinao Taketomi,Yoshiko Mino,Mikihiko Nishitani,Keizaburo Kuramasu,Masashi Goto,Hiroshi Tsutsu,Hikaru Nishitani,Masumi Izuchi,Hiroshi Satani. Владелец: Matsushita Electronics Corp. Дата публикации: 2000-11-02.

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Номер патента: US20190136132A1. Автор: Han Hoon,PARK Jaewan,Lee Jinuk,Lim Junghun,Bae Sang Won,HON YOUNG TAEK. Владелец: SOULBRAIN CO., LTD.. Дата публикации: 2019-05-09.

A kind of method of different line width transistor gate height in improvement semiconductor devices

Номер патента: CN110444470A. Автор: 陈建勋,李昱廷,刘怡良,吴信德. Владелец: Shanghai Huali Integrated Circuit Manufacturing Co Ltd. Дата публикации: 2019-11-12.

SELECTIVE GAS ATTACK METHOD OF A SILICON NITRIDE LAYER FOR THE MANUFACTURE OF SEMICONDUCTOR DEVICES

Номер патента: FR2375339A1. Автор: Klaus Paschke. Владелец: ITT Industries Inc. Дата публикации: 1978-07-21.

Method of forming a spin on glass film of a semiconductor device

Номер патента: GB2320808B. Автор: Sang Ho Jeon,Sang Ki Hong,Hyug Jin Kwon. Владелец: Hyundai Electronics Industries Co Ltd. Дата публикации: 2001-10-17.

Method of removing sidewall spacers in the fabrication of a semiconductor device using an improved removal process

Номер патента: US20040087155A1. Автор: Manfred Horstmann,Karsten Wieczorek,Rolf Stephan. Владелец: Advanced Micro Devices Inc. Дата публикации: 2004-05-06.

Method of manufacturing semiconductor device and semiconductor device

Номер патента: US20080272444A1. Автор: Hiroyuki Kitamura. Владелец: Elpida Memory Inc. Дата публикации: 2008-11-06.

Method of forming an inter-layer dielectric film in a semiconductor device

Номер патента: KR100363839B1. Автор: 김선우. Владелец: 주식회사 하이닉스반도체. Дата публикации: 2002-12-06.

Method of forming a aluminum oxide thin film in a semiconductor device

Номер патента: KR100356473B1. Автор: 김경민,유용식,임찬. Владелец: 주식회사 하이닉스반도체. Дата публикации: 2002-10-18.

Cleaning solution for use in metal residue removal and a semiconductor device manufacturing method for executing cleaning by using the cleaning solution after cmp

Номер патента: US20010051597A1. Автор: Haruki Nojo,Nobuhiro Kato. Владелец: Individual. Дата публикации: 2001-12-13.

SILICON CARBIDE SEMICONDUCTOR SUBSTRATE AND SILICON CARBIDE SEMICONDUCTOR DEVICE

Номер патента: US20190252503A1. Автор: UEHIGASHI Hideyuki. Владелец: . Дата публикации: 2019-08-15.

Method of manufacturing semiconductor structure and semiconductor structure

Номер патента: US20220139923A1. Автор: Jun Xia,Zhongming Liu,Xinman CAO,Shijie BAI. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2022-05-05.

Method of manufacturing a semiconductor device and semiconductor device

Номер патента: US20170053992A1. Автор: Masakazu Okada,Sachiko Aoi. Владелец: Toyota Motor Corp. Дата публикации: 2017-02-23.

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Номер патента: US20240204051A1. Автор: Takeshi Tawara,Shinsuke Harada,Kensuke Takenaka. Владелец: Fuji Electric Co Ltd. Дата публикации: 2024-06-20.

Radiation-hardened semiconductor structure, a semiconductor device including the radiation-hardened semicoductor structure, and methods of forming the radiation-hardened semiconductor structure and semiconductor device

Номер патента: US20120025311A1. Автор: John S. Canham. Владелец: Alliant Techsystems Inc. Дата публикации: 2012-02-02.

Method of splitting semiconductor chip using mechanical machining and semiconductor chip split by the same

Номер патента: US20240312823A1. Автор: Yeongkwon Ko,Seunghun SHIN,Jihun JUNG,Junyeong HEO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-09-19.

Method of manufacturing an assembly of conductors and a semiconductor device manufactured by means of such an assembly

Номер патента: US6340634B1. Автор: Johannes M. A. M. Van Kempen. Владелец: US Philips Corp. Дата публикации: 2002-01-22.

Method of storing GaN substrate, stored substrate and semiconductor device and method of its manufacture

Номер патента: EP1868252A3. Автор: Hideyuki Ijiri,Seiji Nakahata. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2012-11-21.

Epitaxial substrate, method of manufacturing the epitaxial substrate and light emitting diode having epitaxial substrate

Номер патента: US20160064606A1. Автор: Ching-Hsueh Chiu,Ya-Wen Lin,Po-Min Tu,Shih-Cheng Huang. Владелец: Advanced Optoelectronic Technology Inc. Дата публикации: 2016-03-03.

Method of forming a chip package, method of forming a semiconductor arrangement, chip package, and semiconductor arrangement

Номер патента: US12136583B2. Автор: Chee Yang Ng. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2024-11-05.

Method of fabricating an electrical contact for use on a semiconductor device

Номер патента: US09934978B2. Автор: Sadiki Jordan. Владелец: Infineon Technologies North America Corp. Дата публикации: 2018-04-03.

Fabrication method of gesn alloys with high tin composition and semiconductor laser realized with such method

Номер патента: EP3895206A1. Автор: Claude MEYLAN. Владелец: Iris Industries SA. Дата публикации: 2021-10-20.

Methods of curing a dielectric layer for manufacture of a semiconductor device

Номер патента: US09923077B2. Автор: Sang-Jin Hyun,Hoon-joo Na,Yoon-Tae Hwang,Moon-Kyu Park,Ki-joong Yoon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-03-20.

Method of controlling wafer bow in a type III-V semiconductor device

Номер патента: US12080785B2. Автор: Srinivasan Kannan,Peter Kim,Mihir Tungare,Jianwei Wan,Seong-Eun Park. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2024-09-03.

Method of manufacturing silicon carbide substrate, silicon carbide single-crystal substrate and silicon carbide semiconductor device

Номер патента: US20230369411A1. Автор: Hirofumi Yamamoto,Takashi Sakurada,Makoto Sasaki,Naoki Matsumoto,Tetsuro Kondo,Taro Nishiguchi. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2023-11-16.

Method of making single crystal semiconductor substrate articles and semiconductor device

Номер патента: US5030583A. Автор: Charles P. Beetz, Jr.. Владелец: Advanced Technology Materials Inc. Дата публикации: 1991-07-09.

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Номер патента: US20200166833A1. Автор: Masahiro Hashimoto,Mariko Uchida. Владелец: Hoya Electronics Singapore Pte Ltd. Дата публикации: 2020-05-28.

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Номер патента: US20240030032A1. Автор: Hans-Joachim Schulze,Bernhard Goller,Ravi Keshav Joshi,Saurabh Roy,Daria Krasnozhon. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2024-01-25.

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Номер патента: US20140001484A1. Автор: Junyoung Bae,Junsung Choi,Joon Hoi Kim,Boik Park,Cheolmin Park,Dongyong Lee,Wonjo Lee,Sungkeun Lim,Kwangje Woo,Woorihan Kim. Владелец: Samsung Corning Precision Materials Co Ltd. Дата публикации: 2014-01-02.

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Номер патента: US20130328059A1. Автор: Junyoung Bae,Junsung Choi,Joon Hoi Kim,Boik Park,Cheolmin Park,Dongyong Lee,Wonjo Lee,Sungkeun Lim,Woorihan Kim. Владелец: Samsung Corning Precision Materials Co Ltd. Дата публикации: 2013-12-12.

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Номер патента: US20240063039A1. Автор: Ki Won Han,Sang Oh Kim,Wan Hee JEONG,Chan Young Choi,Hee Jae Byun,Kyo Bong KIM,Chang Rak Baek. Владелец: Semes Co Ltd. Дата публикации: 2024-02-22.

N-type aluminum nitride single-crystal substrate and vertical nitride semiconductor device

Номер патента: US09748410B2. Автор: Toru Kinoshita,Toru Nagashima,Toshiyuki Obata. Владелец: Tokuyama Corp. Дата публикации: 2017-08-29.

Method of Fabricating an Electrical Contact for Use on a Semiconductor Device

Номер патента: US20170047228A1. Автор: Sadiki Jordan. Владелец: Infineon Technologies North America Corp. Дата публикации: 2017-02-16.

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Номер патента: US20230343668A1. Автор: Il Kwon Shim,Dzafir Bin Mohd SHARIFF,Ronnie M. DE VILLA. Владелец: UTAC Headquarters Pte Ltd. Дата публикации: 2023-10-26.

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Номер патента: US20050202597A1. Автор: Noriyuki Takahashi. Владелец: Renesas Technology Corp. Дата публикации: 2005-09-15.

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Номер патента: US10310338B2. Автор: Xiangyang Xu. Владелец: Shenzhen China Star Optoelectronics Technology Co Ltd. Дата публикации: 2019-06-04.

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Номер патента: WO2020057053A1. Автор: Wei Song,Bin Zhou,Liangchen YAN,Dongfang Wang,Yingbin HU,Ce ZHAO,Yuankui Ding,Heekyu KIM. Владелец: HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.. Дата публикации: 2020-03-26.

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Номер патента: US20130280426A1. Автор: Zhe Song,Chris M. Carlson. Владелец: Micron Technology Inc. Дата публикации: 2013-10-24.

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Номер патента: US20210335604A1. Автор: Wei Song,Bin Zhou,Liangchen YAN,Dongfang Wang,Yingbin HU,Ce ZHAO,Yuankui Ding,Heekyu KIM. Владелец: Hefei Xinsheng Optoelectronics Technology Co Ltd. Дата публикации: 2021-10-28.

Method for manufacturing a contact on a silicon carbide semiconductor substrate, and silicon carbide semiconductor device

Номер патента: EP4322202A1. Автор: Gregor Langer,Axel Koenig,Ravi Keshav Joshi,Kristijan Luka Mletschnig. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2024-02-14.

Method for manufacturing a contact on a silicon carbide semiconductor substrate, and silicon carbide semiconductor device

Номер патента: US20240055256A1. Автор: Axel König,Gregor Langer,Ravi Keshav Joshi,Kristijan Luka Mletschnig. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2024-02-15.

Method for manufacturing a contact on a silicon carbide substrate, and silicon carbide semiconductor device

Номер патента: US20240055257A1. Автор: Hans-Joachim Schulze,Werner Schustereder,Ravi Keshav Joshi,Saurabh Roy,Daria Krasnozhon. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2024-02-15.

Apparatus and methods for manufacturing semiconductor devices and treating substrates

Номер патента: US09595434B2. Автор: Hyosan Lee,Yongsun Ko,Seokhoon Kim,Kuntack Lee,Kyoungseob Kim,Kyoung Hwan Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-03-14.

Semiconductor device and semiconductor package having the same

Номер патента: US20200020641A1. Автор: Un-Byoung Kang,Yeong-kwon Ko,Jun-Yeong Heo,Ja-Yeon Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-01-16.

Monolithic semiconductor device assemblies

Номер патента: US20230352525A1. Автор: Gordon M. Grivna,Yusheng Lin,Peter Moens. Владелец: Semiconductor Components Industries LLC. Дата публикации: 2023-11-02.

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Номер патента: US20220301933A1. Автор: KNABL Michael,Cooper John,Kitzler Andreas,Dohr Jakob Simon,Krivec Matic,Pieber Daniel. Владелец: . Дата публикации: 2022-09-22.

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Номер патента: CN109207077A. Автор: 高本尚英,杉村敏正,三木香,大西谦司,木村雄大,小坂尚史,靏泽俊浩,赤泽光治. Владелец: Nitto Denko Corp. Дата публикации: 2019-01-15.

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Номер патента: JP7041475B2. Автор: 謙司大西,尚英高本,敏正杉村,光治赤沢,雄大木村,俊浩 ▲鶴▼澤,尚史小坂,香溝端. Владелец: Nitto Denko Corp. Дата публикации: 2022-03-24.

Manufacturing method of semiconductor package

Номер патента: US20170358462A1. Автор: Kazuhiko Kitano,Seita ARAKI. Владелец: J Devices Corp. Дата публикации: 2017-12-14.

3d semiconductor structure for wide-bandgap semiconductor devices

Номер патента: US20240014176A1. Автор: Jiun-Lei Yu,Chun-Lin Tsai,Man-Ho Kwan,Ting-Fu Chang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-01-11.

Method of fabricating substrate having thin film of joined for semiconductor device

Номер патента: KR101230394B1. Автор: 김경준,김동운,이보현,박승용,어성우,유율리아. Владелец: 삼성코닝정밀소재 주식회사. Дата публикации: 2013-02-06.

Method of manufacturing an insulation layer on silicon carbide and semiconductor device

Номер патента: EP3516682A1. Автор: Yuji Komatsu. Владелец: ZF FRIEDRICHSHAFEN AG. Дата публикации: 2019-07-31.

Method of manufacturing semiconductor device, and semiconductor device

Номер патента: US20200135847A1. Автор: Akira KIYOI. Владелец: Mitsubishi Electric Corp. Дата публикации: 2020-04-30.

Method of manufacturing semiconductor device and semiconductor device

Номер патента: US09780163B2. Автор: Satoru Kameyama,Yuki Horiuchi. Владелец: Toyota Motor Corp. Дата публикации: 2017-10-03.

Semiconductor device, template, and method of manufacturing template

Номер патента: US12068244B2. Автор: Yasuhito Yoshimizu,Kaori Umezawa,Kosuke TAKAI. Владелец: Kioxia Corp. Дата публикации: 2024-08-20.

Method of manufacturing semiconductor device, and semiconductor device manufactured thereby

Номер патента: US20020001959A1. Автор: Yasuo Nakatani. Владелец: Mitsubishi Electric Corp. Дата публикации: 2002-01-03.

Method of manufacturing semiconductor electrode and semiconductor device provided with electrodes manufactured by the method

Номер патента: US20040033683A1. Автор: Kenji Tanaka,Hirofumi Koike,Kazuya Suzuki,Kouichi Asai,Kazutoshi Sakai,Shunji Yoshikane. Владелец: Fuji Machine Manufacturing Co Ltd. Дата публикации: 2004-02-19.

Method of manufacturing semiconductor device and semiconductor manufacturing apparatus

Номер патента: US20230036107A1. Автор: Atsushi Yoshida,Yosuke Nakanishi,Shinichiro Katsuki,Kyohei Akiyoshi. Владелец: Mitsubishi Electric Corp. Дата публикации: 2023-02-02.

Method of forming through-hole in silicon substrate, method of forming electrical connection element penetrating silicon substrate and semiconductor device manufactured thereby

Номер патента: US09633930B2. Автор: Jaegab LEE,Daekyun JEONG. Владелец: Industry Academic Cooperation Foundation of Kookmin University. Дата публикации: 2017-04-25.

Semiconductor device and method for manufacturing the same

Номер патента: US20070131964A1. Автор: Sang Yong Lee. Владелец: Dongbu Electronics Co Ltd. Дата публикации: 2007-06-14.

Semiconductor device packages including conductors electrically connecting stacked semiconductor devices by extending along surfaces of the semiconductor devices

Номер патента: US12062635B2. Автор: Yu Jen Chen,Po Chih Yang,Po Chen Kuo,Shih Wei Liang. Владелец: Micron Technology Inc. Дата публикации: 2024-08-13.

Semiconductor device structure integrating air gaps and methods of forming the same

Номер патента: US12068372B2. Автор: Kuan-Lun Cheng,Wen-Hsing Hsieh,Chih-Ching Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-20.

Electroless-plating solution and semiconductor device

Номер патента: WO2002099164A3. Автор: Hiroaki Inoue,Kenji Nakamura,Moriji Matsumoto. Владелец: Ebara Corp. Дата публикации: 2004-05-21.

Semiconductor structure and methods of forming the same

Номер патента: US11749677B2. Автор: Jhon Jhy Liaw,Ta-Chun Lin,Kuo-Hua Pan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-09-05.

Three dimensional semiconductor device having lateral channel

Номер патента: US09691818B2. Автор: Suk Ki Kim. Владелец: SK hynix Inc. Дата публикации: 2017-06-27.

METHOD OF MANUFACTURING SEMICONDUCTOR PACKAGE SUBSTRATE AND SEMICONDUCTOR PACKAGE SUBSTRATE MANUFACTURED USING THE METHOD, AND METHOD OF MANUFACTURING SEMICONDUCTOR PACKAGE AND SEMICONDUCTOR PACKAGE MANUFACTURED USING THE METHOD

Номер патента: US20190267315A1. Автор: Yoon Dong Jin,KANG Sung Il,BAE In Seob. Владелец: . Дата публикации: 2019-08-29.

Method of manufacturing semiconductor package substrate and semiconductor package substrate manufactured using the method, and method of manufacturing semiconductor package and semiconductor package manufactured using the method

Номер патента: US10910299B2. Автор: Sung Il Kang,In Seob BAE,Dong Jin Yoon. Владелец: Haesung DS Co Ltd. Дата публикации: 2021-02-02.

Standard cell device and method of forming an interconnect structure for a standard cell device

Номер патента: US20200328109A1. Автор: Juergen Boemmels,Julien Ryckaert. Владелец: Interuniversitair Microelektronica Centrum vzw IMEC. Дата публикации: 2020-10-15.

Methods of forming alternative channel materials on a non-planar semiconductor device and the resulting device

Номер патента: US09627245B2. Автор: Kangguo Cheng,Ajey Poovannummoottil Jacob,Nicolas Loubet,Bruce Doris. Владелец: STMicroelectronics lnc USA. Дата публикации: 2017-04-18.

Method of forming a thick strained silicon layer and semiconductor structures incorporating a thick strained silicon layer

Номер патента: EP1579485A2. Автор: Qi Xiang,Minh Van Ngo,Eric N. Paton,Paul R. Besser,HaiHong Wang,Jung-Suk Goo. Владелец: Advanced Micro Devices Inc. Дата публикации: 2005-09-28.

METHOD OF MANUFACTURING SEMICONDUCTOR PACKAGE SUBSTRATE AND SEMICONDUCTOR PACKAGE SUBSTRATE MANUFACTURED USING THE SAME

Номер патента: US20190067082A1. Автор: KANG Sung Il,BAE In Seob,KIM Jea Won. Владелец: . Дата публикации: 2019-02-28.

METHOD OF MANUFACTURING SEMICONDUCTOR PACKAGE SUBSTRATE AND SEMICONDUCTOR PACKAGE SUBSTRATE MANUFACTURED USING THE SAME

Номер патента: US20200411362A1. Автор: KANG Sung Il,BAE In Seob,KIM Jea Won. Владелец: . Дата публикации: 2020-12-31.

Methods of forming a contact structure for a vertical channel semiconductor device and the resulting device

Номер патента: US09741847B2. Автор: Bartlomiej Jan Pawlak. Владелец: Globalfoundries Inc. Дата публикации: 2017-08-22.

SOI substrate, element substrate, semiconductor device, electro-optical apparatus, electronic equipment, method of manufacturing the SOI substrate, method of manufacturing the element substrate, and method of manufacturing the electro-optical apparatus

Номер патента: US20030201508A1. Автор: Masahiro Yasukawa. Владелец: Seiko Epson Corp. Дата публикации: 2003-10-30.

Semiconductor device including uniform contact plugs and a method of manufacturing the same

Номер патента: US20100200833A1. Автор: Jung-Hoon Park,Yoon-Jong Song,Jae-Min Shin,Kyu-Rie SIM,Shin-Hee HAN. Владелец: Individual. Дата публикации: 2010-08-12.

Method of manufacturing self-aligned contact opening and semiconductor device

Номер патента: TW200701307A. Автор: Pin-Yao Wang,Liang-Chuan Lai,Jeng-Huan Yang. Владелец: Powerchip Semiconductor Corp. Дата публикации: 2007-01-01.

Method of forming a thick strained silicon layer and semiconductor structures incorporating a thick strained silicon layer

Номер патента: TW200421608A. Автор: Qi Xiang,HaiHong Wang,Jung-Suk Goo,Minh-Van Ngo,Paul R Besser,Eric N Paton. Владелец: Advanced Micro Devices Inc. Дата публикации: 2004-10-16.

Method of forming a thick strained silicon layer and semiconductor structures incorporating a thick strained silicon layer

Номер патента: TWI310241B. Автор: Qi Xiang,Minh Van Ngo,HaiHong Wang,Jung-Suk Goo,Paul R Besser,Eric N Paton. Владелец: Advanced Micro Devices Inc. Дата публикации: 2009-05-21.

Semiconductor devices having a capacitor and methods of manufacturing the same

Номер патента: US20050073053A1. Автор: Jeong Park. Владелец: DongbuAnam Semiconductor Inc. Дата публикации: 2005-04-07.

Semiconductor processing method of forming a conductive line, and buried bit line memory circuitry

Номер патента: US20010021579A1. Автор: Scott DeBoer,Pai-Hung Pan,Yongjun Hu. Владелец: Individual. Дата публикации: 2001-09-13.

Micro-pattern forming method, capacitor and method of manufacturing the same, semiconductor device and method of manufacturing the same, and electronic system including semiconductor device

Номер патента: US20190157276A1. Автор: JAE-HEE KIM,SOON-MOK HA,Jong-Hyuk Kim,Chan Hwang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-05-23.

Method of manufacturing an SOI substrate and method of manufacturing a semiconductor device

Номер патента: EP2009687A2. Автор: Hideto Ohnuma,Kenichiro Makino,Ryota Imahayashi,Yoichi Ilkubo,Sho Nagamatsu. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2008-12-31.

Isolation Layer and Method of manufacturing using the same, apparatus for a Semiconductor device having the Isolation Layer and Method of manufacturing using the same

Номер патента: KR100695868B1. Автор: 이윤성. Владелец: 삼성전자주식회사. Дата публикации: 2007-03-19.

Techniques for forming semiconductor device packages and related packages, intermediate products, and methods

Номер патента: US20210091036A1. Автор: Yu Jen Chen,Po Chih Yang,Po Chen Kuo,Shih Wei Liang. Владелец: Micron Technology Inc. Дата публикации: 2021-03-25.

Three dimensional semiconductor device having lateral channel

Номер патента: US20150372057A1. Автор: Suk Ki Kim. Владелец: SK hynix Inc. Дата публикации: 2015-12-24.

Method of forming a titanium silicide film involved in a semiconductor device

Номер патента: GB9426039D0. Автор: . Владелец: NEC Corp. Дата публикации: 1995-02-22.

Method of forming a titanium silicide film involved in a semiconductor device

Номер патента: GB2285455B. Автор: Tadahiko Horiuchi. Владелец: NEC Corp. Дата публикации: 1997-07-09.

Method of manufacturing a copper metal wiring in a semiconductor device

Номер патента: US20020031911A1. Автор: Sung Pyo. Владелец: Hynix Semiconductor Inc. Дата публикации: 2002-03-14.

Method of forming multilayered metal wire for ic and semiconductor devices therewith

Номер патента: KR0167602B1. Автор: 황준,이원건. Владелец: 김주용. Дата публикации: 1999-02-01.

Method of plasma-enhanced atomic layer deposition process and semiconductor device made thereof

Номер патента: TWI753633B. Автор: 蔡群賢,李庭鵑,蔡群榮,顏聰富,張光瑞. Владелец: 台灣奈米碳素股份有限公司. Дата публикации: 2022-01-21.

manufacturing method of low-k plasma polymerized thin films and semiconductor devices using them

Номер патента: KR100371691B1. Автор: 정동근. Владелец: 정동근. Дата публикации: 2003-02-06.

Method of manufacturing a trench isolation structure for a semiconductor device with a different degree of corner rounding

Номер патента: US6943088B2. Автор: Stephan Kruegel,Gert Burbach,Ralf van Bentum. Владелец: Advanced Micro Devices Inc. Дата публикации: 2005-09-13.

Method of manufacturing capacitor including hydrogen annealing process for semiconductor device

Номер патента: KR100555483B1. Автор: 유차영,김완돈. Владелец: 삼성전자주식회사. Дата публикации: 2006-03-03.

Method of manufacturing a channel stop implant in a semiconductor device

Номер патента: US6472279B1. Автор: Charles W. Pearce,Robert J. Griffin. Владелец: Agere Systems LLC. Дата публикации: 2002-10-29.

THROUGH ELECTRODE SUBSTRATE, METHOD OF MANUFACTURING THROUGH ELECTRODE SUBSTRATE, AND MOUNTING SUBSTRATE

Номер патента: US20210175121A1. Автор: MAEKAWA Shinji,TAKANO Takamasa,Mawatari Hiroshi,KUDO Hiroshi,ASANO Masaaki. Владелец: Dai Nippon Printing Co., Ltd.. Дата публикации: 2021-06-10.

Through electrode substrate, method of manufacturing through electrode substrate, and mounting substrate

Номер патента: US20190287853A1. Автор: Shinji Maekawa,Masaaki Asano,Hiroshi Kudo,Takamasa Takano,Hiroshi Mawatari. Владелец: DAI NIPPON PRINTING CO LTD. Дата публикации: 2019-09-19.

Method of filling gap with silicon-containing material and semiconductor processing apparatus

Номер патента: TW202230441A. Автор: 劉澤鋮,維爾傑米波爾,徐育,湯米帕沃蒂內爾,米可若霍. Владелец: 荷蘭商ＡｓｍＩｐ私人控股有限公司. Дата публикации: 2022-08-01.

Semiconductor devices and methods of forming the same

Номер патента: US20190295925A1. Автор: Chen-Shien Chen,Hon-Lin Huang,Chih-Hung Su,Kun-Ming Tsai,Cheng-Lung Yang,Wei-Je Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2019-09-26.

METHODS OF FORMING A CONTACT STRUCTURE FOR A VERTICAL CHANNEL SEMICONDUCTOR DEVICE AND THE RESULTING DEVICE

Номер патента: US20170154994A1. Автор: Pawlak Bartlomiej Jan. Владелец: . Дата публикации: 2017-06-01.

Methods of forming alternative channel materials on a non-planar semiconductor device and the resulting device

Номер патента: US20150255295A1. Автор: Kangguo Cheng,Ajey Poovannummoottil Jacob,Nicolas Loubet,Bruce Doris. Владелец: STMicroelectronics lnc USA. Дата публикации: 2015-09-10.

Method of forming a inter metal insulating layer of a semiconductor device

Номер патента: KR100296330B1. Автор: 이정래,홍상기. Владелец: 박종섭. Дата публикации: 2001-08-07.

Method of forming metal layer used in the fabrication of semiconductor device

Номер патента: US20090098733A1. Автор: Hyun-Suk Lee,Hyun-Young Kim,Kwang-jin Moon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2009-04-16.

The method of the method for laminate layer transfer and manufacture semiconductor devices

Номер патента: CN102867736B. Автор: 丸山纯矢,高山彻,大野由美子,后藤裕吾. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2016-05-11.

Method for separating semiconductor devices using nanoporous structure

Номер патента: US20150125981A1. Автор: Jin Ho Kang,Sang Wan Ryu. Владелец: UNIVERSITY INDUSTRY LIAISON OFFICE OF CHONNAM NATIONAL UNIVERSITY. Дата публикации: 2015-05-07.

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Номер патента: US20210028106A1. Автор: Machkaoutsan Vladimir,Briggs Basoene,Tokei Zsolt. Владелец: . Дата публикации: 2021-01-28.

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Номер патента: US20190148224A1. Автор: ISHIKAWA Dai,Kobayashi Akiko,Kuroda Aurélie. Владелец: . Дата публикации: 2019-05-16.

Method of Hybrid Packaging a Lead Frame Based Multi-Chip Semiconductor Device with Multiple Interconnecting Structures

Номер патента: US20150236005A1. Автор: Yilmaz Hamza,Xue Yan Xun,WILSON Peter,Lu Jun,Niu Zhiqiang,Lu Ming-Chen,Huo Yan. Владелец: . Дата публикации: 2015-08-20.

Method of selectively depositing a capping layer structure on a semiconductor device structure

Номер патента: US10910262B2. Автор: Akiko Kobayashi,Dai Ishikawa,Aurélie Kuroda. Владелец: ASM IP Holding BV. Дата публикации: 2021-02-02.

Method of forming an element isolation oxide film in a semiconductor device

Номер патента: KR100232883B1. Автор: 김영태,이주석,한우식,이창권,정광용,양예석,박인옥. Владелец: 현대전자산업주식회사. Дата публикации: 1999-12-01.

Method of forming a shallow trench isolation film in a semiconductor device

Номер патента: KR100564988B1. Автор: 김정근. Владелец: 주식회사 하이닉스반도체. Дата публикации: 2006-03-28.

Method of forming a high density plasma film in a semiconductor device

Номер патента: KR100356470B1. Автор: 김정근. Владелец: 주식회사 하이닉스반도체. Дата публикации: 2002-10-18.

Method of forming an element field oxide film in a semiconductor device

Номер патента: KR100237023B1. Автор: 이동호. Владелец: 현대전자산업주식회사. Дата публикации: 2000-01-15.

Method of forming an inter-layer insulating film in a semiconductor device

Номер патента: KR20010003789A. Автор: 이병주. Владелец: 현대전자산업 주식회사. Дата публикации: 2001-01-15.

Method of bonding and transferring a material to form a semiconductor device

Номер патента: US6616854B2. Автор: Robert E. Jones,Sebastian Csutak. Владелец: Motorola Inc. Дата публикации: 2003-09-09.

Method of transferring a device, a method of producing a device holding substrate, and a device holding substrate

Номер патента: US20020115265A1. Автор: Toyoharu Oohata,Yoshiyuki Yanagisawa,Toshiaki Iwafuchi. Владелец: Sony Corp. Дата публикации: 2002-08-22.

Method of bonding and transferring a material to form a semiconductor device

Номер патента: WO2003052817A2. Автор: Robert E. Jones,Sebastian Csutak. Владелец: Motorola, Inc., A Corporation Of The State Of Delaware. Дата публикации: 2003-06-26.

Method of forming a self-aligned contact pad for a semiconductor device

Номер патента: US6355547B1. Автор: Gwan-Hyeob Koh,Jae-Goo Lee,Chang-Hyun Cho. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2002-03-12.

Method of forming a trench for use in manufacturing a semiconductor device

Номер патента: US20040171211A1. Автор: Sang-rok Hah,Hong-seong Son,Sung-Bae Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2004-09-02.

A method of forming a metallic electrode and the metallic electrode semiconductor device

Номер патента: DE102008012678A1. Автор: Akihiro Kariya Niimi,Manabu Kariya Tomisaka,Hisatoshi Kariya Kojima. Владелец: Denso Corp. Дата публикации: 2008-10-09.

Method of forming through electrode on substrate and substrate having through electrode

Номер патента: JP3599325B2. Автор: 功滝沢,倬暢佐藤,龍夫末益,和久糸井. Владелец: Fujikura Ltd. Дата публикации: 2004-12-08.

Semiconductor substrate and producing method, semiconductor device and producing method thereof

Номер патента: CN1288717C. Автор: 永野元,宫野清孝,水岛一郎. Владелец: Toshiba Corp. Дата публикации: 2006-12-06.

Method of depositing tungsten on a substrate and its device

Номер патента: JP6799903B2. Автор: ハンナ・バンノルカー,ラシーナ・フマユン,ジュウェン・ガオ,ミハル・ダネク,ジョシュア・コリンズ. Владелец: Lam Research Corp. Дата публикации: 2020-12-16.

Producing method of multi silicon on insulator substrate and multi silicon on insulator substrate

Номер патента: KR102546554B1. Автор: 박진원. Владелец: 주식회사 효산. Дата публикации: 2023-06-23.

Method of manufacturing a semiconductor device and semiconductor device

Номер патента: US20240372319A1. Автор: Tansen Varghese,Hubert Halbritter,Laura KREINER. Владелец: Ams Osram International GmbH. Дата публикации: 2024-11-07.

Methods of manufacturing phase-change memory device and semiconductor device

Номер патента: US20130102120A1. Автор: Hye Jin Seo,Keum Bum Lee. Владелец: Hynix Semiconductor Inc. Дата публикации: 2013-04-25.

Method of manufacturing semiconductor light emitting device, and semiconductor light emitting device

Номер патента: US09537066B2. Автор: Yoshitaka Kadowaki. Владелец: Dowa Electronics Materials Co Ltd. Дата публикации: 2017-01-03.

Semiconductor devices and methods of manufacturing the same, and semiconductor packages including the semiconductor devices

Номер патента: US09691685B2. Автор: Hyung-Jun Jeon,Byung-lyul Park,Ji-Soon Park,Jum-Yong Park,Jin-Ho Chun,Kyu-Ha Lee,Jin-ho An. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-06-27.

Method of producing laminated substrate, method of producing semiconductor module, laminated substrate, and semiconductor module

Номер патента: US20200043872A1. Автор: Keisuke Yamashiro. Владелец: Fuji Electric Co Ltd. Дата публикации: 2020-02-06.

Method of fabricating integrated structure for MEMS device and semiconductor device

Номер патента: US09988264B2. Автор: Wei-Cheng Wu,Min Chen,Bang-Chiang Lan,Chien-Hsin Huang,Hui-Min Wu,Tzung-I Su,Li-Hsun Ho. Владелец: United Microelectronics Corp. Дата публикации: 2018-06-05.

Bonding substrate, semiconductor package having double-sided substrate, method of manufacturing the bonding substrate, and method of manufacturing the semiconductor package having double-sided substrate

Номер патента: US20240290700A1. Автор: Yun hwa CHOI. Владелец: JMJ Korea Co Ltd. Дата публикации: 2024-08-29.

Light-emitting substrate, method of manufacturing light-emitting substrate, and display device

Номер патента: US12046591B2. Автор: Qi Qi,Xue Dong,XUAN Liang,Fei Wang,Meili Wang. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2024-07-23.

Method of fabricating nonpolar gallium nitride-based semiconductor layer, nonpolar semiconductor device, and method of fabricating the same

Номер патента: US09966497B2. Автор: Seung Kyu Choi,Chae Hon KIM,Jung Whan JUNG. Владелец: Seoul Viosys Co Ltd. Дата публикации: 2018-05-08.

Light-emitting substrate, method of manufacturing light-emitting substrate, and display device

Номер патента: US20240339444A1. Автор: Qi Qi,Xue Dong,XUAN Liang,Fei Wang,Meili Wang. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2024-10-10.

Method of forming copper indium gallium containing precursors and semiconductor compound layers

Номер патента: WO2007092293A3. Автор: Bulent M Basol. Владелец: Bulent M Basol. Дата публикации: 2008-01-03.

Method of mounting electronic component on substrate and device for mounting said component

Номер патента: RU2398280C2. Автор: Франсуа ДРОЗ. Владелец: Награид Са. Дата публикации: 2010-08-27.

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Номер патента: US20200312889A1. Автор: Hiroaki Furukawa,Kazuya Tsujino,Atsushi HACHIYA. Владелец: Sharp Corp. Дата публикации: 2020-10-01.

Method of fabricating array substrate, array substrate, and display apparatus thereof

Номер патента: WO2019029125A1. Автор: Yonglian QI,Lianjie QU,Hebin ZHAO,Shuai LIU,Bingqiang GUI,Guangdong SHI. Владелец: BEIJING BOE DISPLAY TECHNOLOGY CO., LTD.. Дата публикации: 2019-02-14.

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Номер патента: US20210175261A1. Автор: Yonglian QI,Lianjie QU,Hebin ZHAO,Shuai LIU,Bingqiang GUI,Guangdong SHI. Владелец: Beijing BOE Display Technology Co Ltd. Дата публикации: 2021-06-10.

Method of producing display device, display device, method of producing thin-film transistor substrate, and thin film transistor substrate

Номер патента: US20150076502A1. Автор: Hiroshi Sagawa,Naobumi Toyomura. Владелец: Sony Corp. Дата публикации: 2015-03-19.

Method of producing display device, display device, method of producing thin-film transistor substrate, and thin-film transistor substrate

Номер патента: US8034672B2. Автор: Hiroshi Sagawa,Naobumi Toyomura. Владелец: Sony Corp. Дата публикации: 2011-10-11.

Method of determining galvanic corrosion and interconnect structure in a semiconductor device for prevention of galvanic corrosion

Номер патента: US20170169152A1. Автор: Jian-Hong Lin,Yu Ching Lee,Te-Liang Lee,Jyh-Weei Hsia. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-06-15.

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Номер патента: US09734271B2. Автор: Jian-Hong Lin,Yu Ching Lee,Te-Liang Lee,Jyh-Weei Hsia. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-08-15.

Thin film transistor, method of fabricating the same, array substrate and display device

Номер патента: US09812579B2. Автор: Qi Yao,Bin Zhang,Xiaolong He,Zhengliang Li,Jincheng GAO,Zhanfeng CAO,Xiangchun Kong. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2017-11-07.

Pixel unit and method of fabricating the same, array substrate and display device

Номер патента: US09508755B2. Автор: Jun Cheng,Dongfang Wang,Hongda Sun,Xiangyong Kong. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2016-11-29.

Method of manufacturing an electric device e.g. a semiconductor device

Номер патента: US3695955A. Автор: Pieter Johannes Wilhel Jochems,Reinier De Werdt. Владелец: PIETER JOHANNES WILHELMUS JOCH. Дата публикации: 1972-10-03.

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Номер патента: US20230343848A1. Автор: Chuan-Feng Shih,Hsuan-Ta Wu,Cheng-Hsien YEH,Bernard Hao-Chih Liu,Wen-Dung Hsu,Chung-Hung Hung. Владелец: National Cheng Kung University NCKU. Дата публикации: 2023-10-26.

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Номер патента: US20070293038A1. Автор: Yuji Nishitani,Hiroshi Asami,Hidetoshi Kusano,Ken Orui. Владелец: Sony Corp. Дата публикации: 2007-12-20.

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Номер патента: US20140335664A1. Автор: Se-Hwan Yu,Young-Joo Choi,Hyang-Shik Kong,Kweon-Sam Hong,Yoon-Ho Kang,Byoung-Joo Kim. Владелец: Samsung Display Co Ltd. Дата публикации: 2014-11-13.

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Номер патента: US8847223B2. Автор: Hi-Kuk Lee,Cha-Dong KIM,Su-Yeon Sim,Sang-Hyun Yun,Jung-In Park. Владелец: Samsung Display Co Ltd. Дата публикации: 2014-09-30.

Method of fabricating complex microcircuit boards, substrates and microcircuits and the substrates and microcircuits

Номер патента: US4562092A. Автор: Raymond E. Wiech, Jr.. Владелец: Fine Particle Technology Corp. Дата публикации: 1985-12-31.

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Номер патента: US5545589A. Автор: Yoshihiro Bessho,Yoshihiro Tomura. Владелец: Matsushita Electric Industrial Co Ltd. Дата публикации: 1996-08-13.

Method of packaging multiple integrated circuit chips in a standard semiconductor device package

Номер патента: WO1997037374A3. Автор: Dennis J Herrell. Владелец: Advanced Micro Devices Inc. Дата публикации: 1997-11-20.

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Номер патента: US20210066400A1. Автор: XIONG YUAN,Dongsheng Li,Qing Wang,Yu Wang,Pengcheng LU,Shengji Yang,Hui Tong,Yongfa DONG,Kuanta HUANG,Xiaobin Shen,Rongyuan ZOU. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2021-03-04.

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Номер патента: US20100203449A1. Автор: Hi-Kuk Lee,Byung-Uk Kim,Hyoc-Min Youn,Ki-Hyuk Koo,Yeong-Beom Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2010-08-12.

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Номер патента: US20180019346A1. Автор: Qi Yao,Bin Zhang,Xiaolong He,Zhengliang Li,Jincheng GAO,Zhanfeng CAO,Xiangchun Kong. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2018-01-18.

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Номер патента: US20210408508A1. Автор: Ziyu ZHANG,Chunyan Xie. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2021-12-30.

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Номер патента: US20230175164A1. Автор: Shunsuke Kagaya. Владелец: Ebara Corp. Дата публикации: 2023-06-08.

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Номер патента: US09608110B2. Автор: Peter Baars,Carsten Grass. Владелец: Globalfoundries Inc. Дата публикации: 2017-03-28.

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Номер патента: US20060157715A1. Автор: Tae-Hong Lim. Владелец: Dongbu Electronics Co Ltd. Дата публикации: 2006-07-20.

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Номер патента: US20070075383A1. Автор: Tae-Hong Lim. Владелец: Dongbu Electronics Co Ltd. Дата публикации: 2007-04-05.

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Номер патента: US20130017683A1. Автор: Shin Harada,Kyoko Okita,Tsubasa HONKE. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2013-01-17.

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Номер патента: TW200805549A. Автор: Hideyuki Ijiri,Seiji Nakahata. Владелец: Sumitomo Electric Industries. Дата публикации: 2008-01-16.

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Номер патента: US09882085B2. Автор: Ki Bum Nam,Joo Won Choi,A Ram Cha LEE,Yu Dae Han,Jeong Hun HEO,Choong Min Lee,Su Jin Shin. Владелец: Seoul Viosys Co Ltd. Дата публикации: 2018-01-30.

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Номер патента: US20240234534A1. Автор: Weng Chang,Cheng-Lung Hung,Hsin-Yi Lee,Chi-On CHUI. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-11.

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Номер патента: US7829378B2. Автор: Yoshihiro Machida. Владелец: Shinko Electric Industries Co Ltd. Дата публикации: 2010-11-09.

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Номер патента: US20240178015A1. Автор: Yung-Chi Lin,Tsang-Jiuh Wu,Hsien-Ju Tsou,Chien-Wei Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-05-30.

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Номер патента: US20080149953A1. Автор: Yoshinori Kinoshita,Masanobu Ando,Toshiya Uemura,Shigemi Horiuchi,Ryohei Inazawa. Владелец: Toyoda Gosei Co Ltd. Дата публикации: 2008-06-26.

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Номер патента: US09634032B2. Автор: Longqiang Shi,Xiaowen LV,Shimin Ge,Hejing ZHANG,Chihyuan Tseng,Chihyu SU,Wenhui Li. Владелец: Shenzhen China Star Optoelectronics Technology Co Ltd. Дата публикации: 2017-04-25.

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Номер патента: US20150194323A1. Автор: KANG Sung Il,BAE In Seob,JIN Min Seok. Владелец: HAESUNG DS CO., LTD. Дата публикации: 2015-07-09.

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Номер патента: CN104766832A. Автор: 姜圣日,裴仁燮,秦敏硕. Владелец: Marine Origin Supreme Being Ace Co Ltd. Дата публикации: 2015-07-08.

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Номер патента: WO1997024752A2. Автор: Nikhil R. Tasker,Piotr M. Mensz,Babar A. Khan. Владелец: Philips Norden Ab. Дата публикации: 1997-07-10.

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Номер патента: EP0812468B1. Автор: Nikhil R. Tasker,Piotr M. Mensz,Babar A. Khan. Владелец: KONINKLIJKE PHILIPS ELECTRONICS NV. Дата публикации: 2002-11-27.

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Номер патента: US20210217859A1. Автор: WEI CHANG,Eng Huat Toh,Shyue Seng Tan. Владелец: GLOBALFOUNDRIES SINGAPORE PTE LTD. Дата публикации: 2021-07-15.

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Номер патента: US20210335672A1. Автор: Wei Lu,Wei Zhou,Chao Sun,Xiaolin Xu,Weiwei Ma,Yamin CAO. Владелец: Shanghai Huali Integrated Circuit Corp. Дата публикации: 2021-10-28.

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Номер патента: US11443986B2. Автор: Wei Lu,Wei Zhou,Chao Sun,Xiaolin Xu,Weiwei Ma,Yamin CAO. Владелец: Shanghai Huali Integrated Circuit Corp. Дата публикации: 2022-09-13.

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Номер патента: KR101785468B1. Автор: 유경민,신성민,이완표,배병성,맹경태,함승민. Владелец: 호서대학교 산학협력단. Дата публикации: 2017-10-16.

Method of manufacturing semiconductor integrated circuit device, and semiconductor integrated circuit device made by its method

Номер патента: US20040259306A1. Автор: Kazutaka Mori,Masatoshi Hasegawa,Satoshi Sakai,Katsuyuki Asaka,Daichi Matsumoto. Владелец: Renesas Technology Corp. Дата публикации: 2004-12-23.

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Номер патента: US20050275020A1. Автор: Masahiro Kyozuka. Владелец: Shinko Electric Industries Co Ltd. Дата публикации: 2005-12-15.

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Номер патента: US20240243076A1. Автор: Shin-puu Jeng,Po-Yao Lin,Po-Chen LAI,Shu-Shen Yeh,Chin-Hua Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-18.

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Номер патента: US11791281B2. Автор: You-Lung Yen,Pao-Hung Chou,Chun-Hsien Yu. Владелец: Phoenix Pioneer Technology Co Ltd. Дата публикации: 2023-10-17.

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Номер патента: CN111524809A. Автор: 太田千春,西尾让司,饭岛良介. Владелец: Toshiba Corp. Дата публикации: 2020-08-11.

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Номер патента: US20210296219A1. Автор: You-Lung Yen. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2021-09-23.

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Номер патента: WO2024055294A1. Автор: Hui Yan,Chunhua ZHOU,Sichao LI. Владелец: Innoscience (suzhou) Semiconductor Co., Ltd.. Дата публикации: 2024-03-21.

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Номер патента: EP1830397A3. Автор: Takayuki c/o Itami Works Nishiura,Kyoko c/o Itami Works Okita,Yusuke c/o Itami Works Horie. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2009-09-16.

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Номер патента: US20070207630A1. Автор: Takayuki Nishiura,Kyoko Okita,Yusuke Horie. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2007-09-06.

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Номер патента: US20200286929A1. Автор: Song Liu,Wenlin Zhang,Zhengliang Li,ce Ning,Xuefei Sun. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2020-09-10.

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Номер патента: US11024657B2. Автор: Song Liu,Wenlin Zhang,Zhengliang Li,ce Ning,Xuefei Sun. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2021-06-01.

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Номер патента: EP3671824A1. Автор: Song Liu,Wenlin Zhang,Zhengliang Li,ce Ning,Xuefei Sun. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2020-06-24.

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Номер патента: AU2001236076A1. Автор: Seiji Nagai,Masayoshi Koike,Yuta Tezen. Владелец: Toyoda Gosei Co Ltd. Дата публикации: 2001-11-12.

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Номер патента: US9685518B2. Автор: Chia-Shiung Tsai,Chung-Yi Yu,Ru-Liang Lee,Chih-Ming Chen,Szu-Yu Wang,Chin-Cheng CHANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-06-20.

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Номер патента: US20200043872A1. Автор: YAMASHIRO Keisuke. Владелец: FUJI ELECTRIC CO., LTD.. Дата публикации: 2020-02-06.

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Номер патента: US20200166833A1. Автор: Hashimoto Masahiro,Uchida Mariko. Владелец: . Дата публикации: 2020-05-28.

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Номер патента: US20150054162A1. Автор: Hong Il Kim. Владелец: LG Innotek Co Ltd. Дата публикации: 2015-02-26.

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Номер патента: US20220139798A1. Автор: Ng Chee Yang. Владелец: . Дата публикации: 2022-05-05.

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Номер патента: US20060121719A1. Автор: Sachiko Oda,Junichi Nakamura,Tetsuo Sakaguchi,Kazuya Mukoyama,Masahiro Yumoto. Владелец: Shinko Electric Industries Co Ltd. Дата публикации: 2006-06-08.

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Номер патента: CN1123420A. Автор: 黄儁. Владелец: Hyundai Electronics Industries Co Ltd. Дата публикации: 1996-05-29.

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Номер патента: US20140273512A1. Автор: Yamada Naoki,Choi Jaehyoung,SATO Hiroki,KIM Younsoo,CHO Younjoung,Shiratori Tsubasa,Cho Chin Moo,KANG SANGYEOL,YOO Chayoung. Владелец: . Дата публикации: 2014-09-18.

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Номер патента: CN108780753A. Автор: 油谷幸则,桧山真. Владелец: INTERNATIONAL ELECTRIC CO Ltd. Дата публикации: 2018-11-09.

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Номер патента: KR100881130B1. Автор: 강춘수. Владелец: 주식회사 하이닉스반도체. Дата публикации: 2009-02-02.

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Номер патента: US11894320B2. Автор: Shin-puu Jeng,Po-Yao Lin,Po-Chen LAI,Shu-Shen Yeh,Chin-Hua Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-02-06.

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Номер патента: US12125881B2. Автор: Hiromu Shiomi,Tsutomu Hori,Takaya MIYASE. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2024-10-22.

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Номер патента: US20130328059A1. Автор: Lim SungKeun,Park Boik,Park CheolMin,Lee DongYong,Kim Woorihan,Kim Joon Hoi,Bae JunYoung,Lee WonJo,Choi JunSung. Владелец: . Дата публикации: 2013-12-12.

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Номер патента: US20140001484A1. Автор: Lim SungKeun,Park Boik,Park CheolMin,Lee DongYong,Kim Woorihan,Kim Joon Hoi,Bae JunYoung,Lee WonJo,Choi JunSung,Woo KwangJe. Владелец: . Дата публикации: 2014-01-02.

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Номер патента: US6855571B1. Автор: Atsushi Yamada,Toshiya Yokogawa,Akihiko Ishibashi,Gaku Sugahara. Владелец: Matsushita Electric Industrial Co Ltd. Дата публикации: 2005-02-15.

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Номер патента: US9530709B2. Автор: Baker Scott,Dirk Robert Walter Leipold,George Maxim,Julio C. Costa. Владелец: Qorvo US Inc. Дата публикации: 2016-12-27.

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Номер патента: CN114378840A. Автор: 王凯,周明. Владелец: Xi'an North Huachuang Microelectronic Equipment Co ltd. Дата публикации: 2022-04-22.

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Номер патента: CN110556289A. Автор: 陈冠宇. Владелец: PFC DEVICE HOLDING Ltd. Дата публикации: 2019-12-10.

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Номер патента: US11910614B2. Автор: Chang Sup Lee,Phil Ouk NAM,Sung Yun LEE,Chang Seok Kang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-02-20.

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Номер патента: US11955528B2. Автор: Weng Chang,Cheng-Lung Hung,Hsin-Yi Lee,Chi-On CHUI. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-04-09.

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Номер патента: US20130323906A1. Автор: Woo Kwang-Je,Kim Donghyun,Jeon JongPil,Kim Dong-Woon,Kim MinJu,Kim A-Ra,Shur Joong Won,Jung Kyungsub,Kim Mikyoung,Lee Bohyun,Kim Hyunjoon. Владелец: SAMSUNG CORNING PRECISION MATERIALS CO., LTD.. Дата публикации: 2013-12-05.

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Номер патента: US8399776B2. Автор: Bernd Karl Appelt,Yuan-Chang Su,Shih-Fu Huang,Chia-Cheng Chen,William T Chen,Calvin CHEUNG,Ta-Chun Lee. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2013-03-19.

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Номер патента: US20040206966A1. Автор: Hideto Sugawara,Tsunenori Hiratsuka. Владелец: Toshiba Corp. Дата публикации: 2004-10-21.

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Номер патента: CN101887874A. Автор: 陈嘉成,黄士辅,陈光雄,苏洹漳. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2010-11-17.

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Номер патента: US20180308983A1. Автор: Xiaoping YU. Владелец: Shenzhen China Star Optoelectronics Technology Co Ltd. Дата публикации: 2018-10-25.

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Номер патента: US20230260961A1. Автор: Ching-Hua Hsieh,Chih-Wei Lin,Ming-Yu Yen,Kai-Fung Chang,Sheng-Feng Weng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-08-17.

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Номер патента: US20160064606A1. Автор: TU PO-MIN,HUANG SHIH-CHENG,LIN YA-WEN,CHIU CHING-HSUEH. Владелец: . Дата публикации: 2016-03-03.

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Номер патента: KR20120137300A. Автор: 신노스케 마에다,사토시 히라노,하지메 사이키. Владелец: 니혼도꾸슈도교 가부시키가이샤. Дата публикации: 2012-12-20.

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Номер патента: CN108473362A. Автор: 小野和孝,泽村茂辉,塙优. Владелец: Asahi Glass Co Ltd. Дата публикации: 2018-08-31.

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Номер патента: TW200746262A. Автор: Chih-Ming Lai,Po-Chun Liu,Yih-Der Guo,Jenq-Dar Tsay,Wen-Yueh Liu. Владелец: Ind Tech Res Inst. Дата публикации: 2007-12-16.

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Номер патента: EP1189495A1. Автор: Akira Hashimoto,Masaaki Hayama,Kazuhiro Miura,Takeo Yasuho. Владелец: Matsushita Electric Industrial Co Ltd. Дата публикации: 2002-03-20.

Method of manufacturing nitride semiconductor substrate and composite material substrate

Номер патента: TWI334164B. Автор: Chih Ming Lai,Po Chun Liu,Wen Yueh Liu,Yih Der Guo,Jenq Dar Tsay. Владелец: Ind Tech Res Inst. Дата публикации: 2010-12-01.

Method of manufacturing multilayer wiring substrate, and multilayer wiring substrate

Номер патента: KR20150008363A. Автор: 신노스케 마에다,사토시 히라노,하지메 사이키. Владелец: 니혼도꾸슈도교 가부시키가이샤. Дата публикации: 2015-01-22.

Method of forming a high quality interfacial layer for a semiconductor device by performing a low temperature ald process

Номер патента: US20140242788A1. Автор: Dina Triyoso,Gabriela Dilliway,Elke Erben,Rimoon Agaiby. Владелец: Globalfoundries Inc. Дата публикации: 2014-08-28.

Method of Improving Package Creepage Distance

Номер патента: US20240105447A1. Автор: Hans-Juergen Funke,Tim Böttcher,Ivan Shiu. Владелец: Nexperia BV. Дата публикации: 2024-03-28.

Manufacture method of dual gate oxide semiconductor tft substrate and structure thereof

Номер патента: US20170141141A1. Автор: Longqiang Shi,Xiaowen LV,Shimin Ge,Hejing ZHANG,Chihyuan Tseng,Chihyu SU,Wenhui Li. Владелец: Shenzhen China Star Optoelectronics Technology Co Ltd. Дата публикации: 2017-05-18.

Manufacture method of dual gate oxide semiconductor TFT substrate and structure thereof

Номер патента: US9748285B2. Автор: Longqiang Shi,Xiaowen LV,Shimin Ge,Hejing ZHANG,Chihyuan Tseng,Chihyu SU,Wenhui Li. Владелец: Shenzhen China Star Optoelectronics Technology Co Ltd. Дата публикации: 2017-08-29.

Thin film transistor, method for manufacturing the same, array substrate and display device

Номер патента: US20140061634A1. Автор: Xuehui Zhang,Zhanfeng CAO. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2014-03-06.

Method of Producing Silicon Carbide Epitaxial Substrate, Silicon Carbide Epitaxial Substrate, and Silicon Carbide Semiconductor Device

Номер патента: US20160086799A1. Автор: Hiyoshi Toru. Владелец: . Дата публикации: 2016-03-24.

METHODS OF FORMING SUBSTANTIALLY SELF-ALIGNED ISOLATION REGIONS ON FINFET SEMICONDUCTOR DEVICES AND THE RESULTING DEVICES

Номер патента: US20150129934A1. Автор: Wang Wenhui,LiCausi Nicholas V.,Xie Ruilong,Kamineni Vimal K.,Wedlake Michael,Cantone Jason R.,Bello Abner F.. Владелец: GLOBALFOUNDRIES INC.. Дата публикации: 2015-05-14.

Method of growing an epitaxial substrate and forming a semiconductor device on the epitaxial substrate

Номер патента: US20160343842A1. Автор: Hajime Matsuda. Владелец: Sumitomo Electric Device Innovations Inc. Дата публикации: 2016-11-24.

METHOD OF FORMING OHMIC CONTACT FOR GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR DEVICE AND GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR DEVICE

Номер патента: US20200365705A1. Автор: LIU Shenghou,CAI WENBI,LIN GUANGYAO,HUI YEUK-WAH. Владелец: . Дата публикации: 2020-11-19.

Nitride semiconductor crystal, manufacturing method of the nitride semiconductor freestanding substrate and nitride semiconductor device

Номер патента: CN102154704A. Автор: 藤仓序章. Владелец: Hitachi Cable Ltd. Дата публикации: 2011-08-17.

Method of forming an electrode on a substrate of a semiconductor device

Номер патента: US6048783A. Автор: Hye-Young Kim,Kyo-Hoo Moon. Владелец: LG LCD Co Ltd. Дата публикации: 2000-04-11.

Low temperature polycrystalline silicon thin film and method of producing the same, array substrate and display apparatus

Номер патента: US20160351602A1. Автор: Chunping Long,Xueyan TIAN. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2016-12-01.

METHOD OF FORMING INTERLAYER DIELECTRIC FILM ABOVE METAL GATE OF SEMICONDUCTOR DEVICE

Номер патента: US20140120706A1. Автор: Chen Li,Liu Ding-I,Leu Po-Hsiung,Lin Jyh-Nan,Sun Chin-Feng. Владелец: Taiwan Semiconductor Manufacturing Co., Ltd.. Дата публикации: 2014-05-01.

Methods of fluorinating filters used in the manufacture of a semiconductor device

Номер патента: US20190105613A1. Автор: Cesar M. Garza. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-04-11.

THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME, DISPLAY SUBSTRATE AND METHOD OF FABRICATING THE SAME, DISPLAY DEVICE

Номер патента: US20200135936A1. Автор: CAO Binbin. Владелец: . Дата публикации: 2020-04-30.

METHOD OF FORMING VIA HOLE, ARRAY SUBSTRATE AND METHOD OF FORMING THE SAME AND DISPLAY DEVICE

Номер патента: US20180233379A1. Автор: Yuan Zhidong. Владелец: . Дата публикации: 2018-08-16.

METHODS OF CURING A DIELECTRIC LAYER FOR MANUFACTURE OF A SEMICONDUCTOR DEVICE

Номер патента: US20160307762A1. Автор: Hyun Sang-Jin,Na Hoon-Joo,HWANG Yoon-Tae,Park Moon-Kyu,Yoon Ki-Joong. Владелец: . Дата публикации: 2016-10-20.

Method of controlling gate oxide thickness in the fabrication of semiconductor devices.

Номер патента: EP0631308A3. Автор: Ara Philipossian,Brian S Doyle,Hamid R Soleimani. Владелец: Digital Equipment Corp. Дата публикации: 1996-06-12.

Underfill of bumped or raised die using a barrier adjacent to the sidewall of semiconductor device

Номер патента: US5973404A. Автор: Salman Akram,James M. Wark. Владелец: Micron Technology Inc. Дата публикации: 1999-10-26.

Sputtering system, method of depositing material on a substrate and method of determining the end of a life cycle of a sputtering target

Номер патента: CN109750265B. Автор: 陈彦羽,林群智,潘建勋,朱玄之. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-06-11.

Methods and apparatus for using epoxy-based or ink-based spacer to support large die in semiconductor devices

Номер патента: US20230207403A1. Автор: Chong Leong Gan,Li Jao,Min Hua Chung. Владелец: Micron Technology Inc. Дата публикации: 2023-06-29.

Method of reducing focusing error of exposure process in a semiconductor device

Номер патента: TW408366B. Автор: Ho-Young Kang,Jung-Hyeon Lee,Jin-Seog Hong. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2000-10-11.

FABRICATION METHOD OF A MIXED ALLOY LEAD FRAME FOR PACKAGING POWER SEMICONDUCTOR DEVICES

Номер патента: US20130273697A1. Автор: Lu Jun,Feng Tao,Niu Zhi Qiang. Владелец: . Дата публикации: 2013-10-17.

Method of Fabricating an Electrical Contact for Use on a Semiconductor Device

Номер патента: US20170047228A1. Автор: Sadiki Jordan. Владелец: Infineon Technologies North America Corp. Дата публикации: 2017-02-16.

METHOD OF PRODUCING METAL ELECTRODE, ARRAY SUBSTRATE AND METHOD OF PRODUCING THE SAME, DISPLAY DEVICE

Номер патента: US20190094597A1. Автор: Li Xiaolong,Xu Wenqing,SONG Yongzhi,LIU Mingxuan,Zhang Xiaoxiang,GUO Huibin,Wu Zumou. Владелец: . Дата публикации: 2019-03-28.

METHOD OF FORMING A HIGH QUALITY INTERFACIAL LAYER FOR A SEMICONDUCTOR DEVICE BY PERFORMING A LOW TEMPERATURE ALD PROCESS

Номер патента: US20140242788A1. Автор: Erben Elke,Triyoso Dina,Dilliway Gabriela,Agaiby Rimoon. Владелец: GLOBALFOUNDRIES INC.. Дата публикации: 2014-08-28.

Method of Controlling Wafer Bow in a Type III-V Semiconductor Device

Номер патента: US20200303531A1. Автор: Kim Peter,PARK Seong-eun,Tungare Mihir,Wan Jianwei,Kannan Srinivasan. Владелец: . Дата публикации: 2020-09-24.

Method of Controlling Wafer Bow in a Type III-V Semiconductor Device

Номер патента: US20180374941A1. Автор: Kim Peter,PARK Seong-eun,Tungare Mihir,Wan Jianwei,Kannan Srinivasan. Владелец: . Дата публикации: 2018-12-27.

Method of forming a self-aligned silicide layer in a semiconductor device

Номер патента: KR100508080B1. Автор: 김한성,김호식,우성오. Владелец: 삼성전자주식회사. Дата публикации: 2005-10-26.

2-DIMENSION SEMICONDUCTOR, METHOD OF p-TYPE DOPING THE SAME, AND 2-DIMENSION SEMICONDUCTOR DEVICE COMPRISING THE SAME

Номер патента: KR102080083B1. Автор: 조문호,서승영,허호석,성지호. Владелец: 기초과학연구원. Дата публикации: 2020-02-24.

Method of forming a film at low temperature for a semiconductor device

Номер патента: KR0175430B1. Автор: 겐지 오까다,이찌로 나까야마,분지 미즈노. Владелец: 마쯔시다 덴기 산교 가부시끼가이샤. Дата публикации: 1999-04-01.

Manufacturing method of small photoresist pattern using thermal flow process for semiconductor device

Номер патента: KR100510448B1. Автор: 김창환,이중현. Владелец: 삼성전자주식회사. Дата публикации: 2005-10-21.

Formation method of silicide layer using the Excimer laser for the semiconductor devices

Номер патента: KR20230016746A. Автор: 이승희,김준업. Владелец: 주식회사 지엔테크. Дата публикации: 2023-02-03.

Method of controlling gate dopant penetration and diffusion in a semiconductor device

Номер патента: US6174807B1. Автор: Isik C. Kizilyalli,Joseph Rudolph Radosevich. Владелец: Lucent Technologies Inc. Дата публикации: 2001-01-16.

Method of fabricating a fin field effect transistor in a semiconductor device

Номер патента: US7316945B2. Автор: Jeong-Ho Park. Владелец: Dongbu HitekCo Ltd. Дата публикации: 2008-01-08.

Manufacturing Method of Semiconductor Substrate having Mask Pattern for High Quality Semiconductor Device

Номер патента: KR101379341B1. Автор: 이원석,이동헌,장종진,남옥현,우서휘. Владелец: 한국산업기술대학교산학협력단. Дата публикации: 2014-04-02.

Method of achieving higher inversion layer mobility in silicon carbide semiconductor devices

Номер патента: WO2001045148A1. Автор: Dev Alok. Владелец: KONINKLIJKE PHILIPS ELECTRONICS N.V.. Дата публикации: 2001-06-21.

A method of producing a zinc oxide-containing material and a semiconductor device with a zinc oxide-containing material

Номер патента: DE102008039183A1. Автор: Fritz Prof. Dr. Henneberger,Sergey Dr. Sadofev. Владелец: Humboldt Universitaet zu Berlin. Дата публикации: 2010-02-25.

Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate

Номер патента: US20080202409A1. Автор: Kensaku Motoki,Takuji Okahisa,Seiji Nakahata,Ryu Hirota. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2008-08-28.

Method of controlling wafer bow in a type iii-v semiconductor device

Номер патента: EP3419046A2. Автор: Srinivasan Kannan,Seong Eun Park,Mihir Tungare,Peter Wook Kim,Jianwei Wan. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2018-12-26.

Compound semiconductor substrate and compound semiconductor device

Номер патента: US20230343865A1. Автор: Keisuke Kawamura,Sumito OUCHI,Shigeomi Hishiki. Владелец: AIR WATER INC. Дата публикации: 2023-10-26.

LOW TEMPERATURE POLYCRYSTALLINE SILICON THIN FILM AND METHOD OF PRODUCING THE SAME, ARRAY SUBSTRATE AND DISPLAY APPARATUS

Номер патента: US20140138695A1. Автор: Long Chunping,Tian Xueyan. Владелец: BOE Technology Group Co., Ltd.. Дата публикации: 2014-05-22.

SILICON CARBIDE SUBSTRATE, SILICON CARBIDE SEMICONDUCTOR DEVICE, AND METHODS FOR MANUFACTURING SILICON CARBIDE SUBSTRATE AND SILICON CARBIDE SEMICONDUCTOR DEVICE

Номер патента: US20160086798A1. Автор: Kubota Ryosuke,Okita Kyoko,Horii Taku,YAMADA Shunsuke,TANAKA So,NISHIURA Takayuki,Matsushima Akira. Владелец: . Дата публикации: 2016-03-24.

Thin Film Transistor and Method of Fabricating the Same, Array Substrate and Display Device

Номер патента: US20190088788A1. Автор: Qi Yao,Shengguang Ban,Zhanfeng CAO,Dapeng XUE. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2019-03-21.

THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME, DISPLAY SUBSTRATE AND DISPLAY DEVICE

Номер патента: US20150311345A1. Автор: ZHAO Ce. Владелец: . Дата публикации: 2015-10-29.

LOW TEMPERATURE POLYCRYSTALLINE SILICON THIN FILM AND METHOD OF PRODUCING THE SAME, ARRAY SUBSTRATE AND DISPLAY APPARATUS

Номер патента: US20160351602A1. Автор: Long Chunping,Tian Xueyan. Владелец: . Дата публикации: 2016-12-01.

Method for mounting a compound unit of an optical semiconductor device and a support substrate and an optical semiconductor device on a support substrate

Номер патента: KR19980069992A. Автор: 마츠쿠라히사오,쿠도우야스히코,호타하지메,히라카와아키오,스가하라마사키,우츠노미야지로,쿠로사와키요시. Владелец: 사와무라시코우. Дата публикации: 1998-10-26.

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Номер патента: US20180059491A1. Автор: Xu Xiangyang. Владелец: . Дата публикации: 2018-03-01.

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Номер патента: US20180059492A1. Автор: Xu Xiangyang. Владелец: . Дата публикации: 2018-03-01.

METHOD OF FABRICATING ARRAY SUBSTRATE, ARRAY SUBSTRATE, AND DISPLAY DEVICE

Номер патента: US20150333182A1. Автор: GUO Jian. Владелец: . Дата публикации: 2015-11-19.

FABRICATION METHOD OF THIN FILM TRANSISTOR, ARRAY SUBSTRATE, AND LIQUID CRYSTAL DISPLAY PANEL

Номер патента: US20180358468A1. Автор: Wu Yue,Jiang Chunsheng. Владелец: Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.. Дата публикации: 2018-12-13.

Manufacturing method of low-temperature polysilicon TFT substrate and low-temperature polysilicon TFT substrate

Номер патента: CN105514035A. Автор: 张占东,汤富雄. Владелец: Wuhan China Star Optoelectronics Technology Co Ltd. Дата публикации: 2016-04-20.

THE METHOD OF MANUFACTRING SINGLE CRYSTAL GaN SUBSTRATE AND SINGLE CRYSTAL GaN SUBSTRATE

Номер патента: KR100450221B1. Автор: 모토키켄사쿠,오카히사타쿠지,카사이히토시. Владелец: 스미토모덴키고교가부시키가이샤. Дата публикации: 2004-09-30.

Liquid treatment device for substrate, cleaning method of liquid treatment device for substrate, and recording medium

Номер патента: KR20150131968A. Автор: 슈헤이 다카하시,히로미 기요세,가츠후미 마츠키,다카시 우노,히로타카 마루야마,가즈야 고야마,히데키 니시무라. Владелец: 도쿄엘렉트론가부시키가이샤. Дата публикации: 2015-11-25.

Manufacture method of IPS TFT-LCD array substrate and IPS TFT-LCD array substrate

Номер патента: US10073308B2. Автор: Xiangyang Xu. Владелец: Shenzhen China Star Optoelectronics Technology Co Ltd. Дата публикации: 2018-09-11.

SILICON CARBIDE EPITAXIAL SUBSTRATE AND SILICON CARBIDE SEMICONDUCTOR DEVICE

Номер патента: US20190040545A1. Автор: NAKAMURA Yu,KONISHI Kazuya. Владелец: Mitsubishi Electric Corporation. Дата публикации: 2019-02-07.

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Номер патента: US20190145021A1. Автор: Nakata Shuhei,Tanaka Takanori,Kimura Yasuhiro,Mitani Yoichiro,NAKAMURA Yu,YAMAMOTO Shigehisa. Владелец: Mitsubishi Electric Corporation. Дата публикации: 2019-05-16.

SILICON CARBIDE EPITAXIAL SUBSTRATE AND SILICON CARBIDE SEMICONDUCTOR DEVICE

Номер патента: US20190226118A1. Автор: NAKAMURA Yu,KONISHI Kazuya. Владелец: Mitsubishi Electric Corporation. Дата публикации: 2019-07-25.

N-TYPE ALUMINUM NITRIDE SINGLE-CRYSTAL SUBSTRATE AND VERTICAL NITRIDE SEMICONDUCTOR DEVICE

Номер патента: US20160254391A1. Автор: Kinoshita Toru,OBATA Toshiyuki,NAGASHIMA Toru. Владелец: TOKUYAMA CORPORATION. Дата публикации: 2016-09-01.

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Номер патента: US20200270766A1. Автор: NAKAMURA Yu,KONISHI Kazuya. Владелец: Mitsubishi Electric Corporation. Дата публикации: 2020-08-27.

Method for manufacturing silicon carbide epitaxial substrate and silicon carbide semiconductor device

Номер патента: JP6798293B2. Автор: 太郎西口,健二平塚. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2020-12-09.

Method for manufacturing silicon carbide epitaxial substrate and silicon carbide semiconductor device

Номер патента: WO2017090285A1. Автор: 太郎西口,和田　圭司,洋典伊東. Владелец: 住友電気工業株式会社. Дата публикации: 2017-06-01.

III-Nitride Crystal Manufacturing Method, III-Nitride Crystal Substrate, and III-Nitride Semiconductor Device

Номер патента: US20090315150A1. Автор: Tomohiro Kawase,Koji Uematsu,Ryu Hirota. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2009-12-24.

III-nitride crystal substrate and III-nitride semiconductor device

Номер патента: US8310030B2. Автор: Tomohiro Kawase,Koji Uematsu,Ryu Hirota. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2012-11-13.

Method for manufacturing silicon carbide epitaxial substrate and silicon carbide semiconductor device

Номер патента: JP6954316B2. Автор: 勉堀,洋典伊東. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2021-10-27.

Method for manufacturing silicon carbide epitaxial substrate and silicon carbide semiconductor device

Номер патента: JPWO2019044029A1. Автор: 勉堀,洋典伊東. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2020-11-05.

Silicon carbide epitaxial substrate and silicon carbide semiconductor device

Номер патента: CN108292686B. Автор: 小西和也,中村勇. Владелец: Mitsubishi Electric Corp. Дата публикации: 2021-02-12.

Silicon carbide epitaxial substrate and silicon carbide semiconductor device

Номер патента: WO2017199792A1. Автор: 陽一郎三谷,中田　修平,泰広木村,勇中村,貴規田中,茂久山本. Владелец: 三菱電機株式会社. Дата публикации: 2017-11-23.

Method for manufacturing silicon carbide epitaxial substrate and silicon carbide semiconductor device

Номер патента: JP6856156B2. Автор: 圭司和田,太郎西口,和田　圭司,洋典伊東. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2021-04-07.

Silicon carbide epitaxial substrate and silicon carbide semiconductor device

Номер патента: WO2017094764A1. Автор: 和也小西,勇中村. Владелец: 三菱電機株式会社. Дата публикации: 2017-06-08.

Method for manufacturing silicon carbide epitaxial substrate and silicon carbide semiconductor device

Номер патента: WO2017090285A9. Автор: 太郎西口,和田　圭司,洋典伊東. Владелец: 住友電気工業株式会社. Дата публикации: 2018-04-19.

Silicon carbide substrate and silicon carbide semiconductor device including the same

Номер патента: US20240186381A1. Автор: Hideyuki Uehigashi,Akiyoshi HORIAI. Владелец: Mirise Technologies Corp. Дата публикации: 2024-06-06.

Image sensor devices, methods of manufacture thereof, and semiconductor device manufacturing methods

Номер патента: US09748304B2. Автор: Szu-Ying Chen,Dun-Nian Yaung,Jen-Cheng Liu,Jeng-Shyan Lin,Shu-Ting Tsai,U-Ting CHEN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-08-29.

Method of manufacturing a semiconductor device and semiconductor device obtained by means of such a method

Номер патента: US20060128089A1. Автор: Viet Nguyen Hoang,Dirk Gravesteijn,Romano Julma Hoofman. Владелец: KONINKLIJKE PHILIPS ELECTRONICS NV. Дата публикации: 2006-06-15.

Method of manufacturing a semiconductor device and semiconductor device obtained by using such a method

Номер патента: WO2004070831A1. Автор: Yukiko Furukawa. Владелец: Interuniversitair Microelektronica Centrum Vzw,. Дата публикации: 2004-08-19.

Method of manufacturing semiconductor device using plasma doping process and semiconductor device manufactured by the method

Номер патента: US09577075B2. Автор: Sunghyun Choi,Yong-Suk Tak,Kyungin Choi,JaeJong Han,Bonyoung Koo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-02-21.

Method of manufacturing semiconductor device and semiconductor device

Номер патента: US09941112B2. Автор: Koji Ito,Kazuhiko Ito,Atsushi Ogasawara,Koya Muyari. Владелец: Shindengen Electric Manufacturing Co Ltd. Дата публикации: 2018-04-10.

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Номер патента: US09825153B2. Автор: Sunghyun Choi,Yong-Suk Tak,Kyungin Choi,JaeJong Han,Bonyoung Koo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-11-21.

Semiconductor devices, methods of manufacture thereof, and semiconductor device packages

Номер патента: US09773724B2. Автор: Szu Wei Lu,Jing-Cheng Lin,Po-Hao Tsai,Ying-Ching Shih,I-Ting Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-09-26.

Method of manufacturing semiconductor device and semiconductor manufacturing apparatus

Номер патента: US09728473B2. Автор: Masayuki Kitamura,Atsuko Sakata,Satoshi Wakatsuki. Владелец: Toshiba Corp. Дата публикации: 2017-08-08.

Semiconductor devices including through-silicon-vias and methods of manufacturing the same and semiconductor packages including the semiconductor devices

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Semiconductor device structure and methods of forming the same

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Manufacturing method of semiconductor device and semiconductor device

Номер патента: US7867890B2. Автор: Masaru Seto. Владелец: Oki Semiconductor Co Ltd. Дата публикации: 2011-01-11.

Method of manufacturing semiconductor device and semiconductor device

Номер патента: US09805985B2. Автор: Jhon Jhy Liaw. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-10-31.

Manufacturing method of semiconductor device

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Method of forming microstructures on a substrate and a microstructured assembly used for same

Номер патента: CA2543518A1. Автор: Takaki Sugimoto,Chikafumi Yokoyama. Владелец: Individual. Дата публикации: 2005-05-12.

Method of forming floating structure of substrate and method of manufacturing floating structure gate electrode and field emission device employing the floating structure

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Method of wetting low surface energy substrate and a system therefor

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Method of wetting low surface energy substrate and a system therefor

Номер патента: CA3217813A1. Автор: Alexander L. AGAPOV. Владелец: WL Gore and Associates Inc. Дата публикации: 2020-12-10.

Method of forming microstructures on a substrate and a microstructured assembly used for same

Номер патента: WO2005042427A2. Автор: Chikafumi Yokoyama,Takaki Sugimoto. Владелец: 3M INNOVATIVE PROPERTIES COMPANY. Дата публикации: 2005-05-12.

Method of forming microstructures on a substrate and a microstructured assembly used for same

Номер патента: WO2005042427A3. Автор: Takaki Sugimoto,Chikafumi Yokoyama. Владелец: 3M Innovative Properties Co. Дата публикации: 2005-07-07.

Method of Manufacturing Semiconductor Device, Substrate Processing Method and Apparatus, Non-Transitory Computer Readable Recording Medium, and Semiconductor Device

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Method of manufacturing semiconductor device and semiconductor manufacturing apparatus

Номер патента: US09779978B2. Автор: Junichi Wada,Masayuki Kitamura,Atsuko Sakata,Takeshi Ishizaki,Satoshi Wakatsuki,Shinya Okuda,Kei Watanabe,Daisuke Ikeno,Hirotaka Ogihara. Владелец: Toshiba Corp. Дата публикации: 2017-10-03.

Method of manufacturing a semiconductor device, in which a high-breakdown-voltage mos transistor and a low-breakdown-voltage mos transistor are formed on an identical semiconductor substrate and semiconductor device manufactured thereby

Номер патента: US6916714B2. Автор: Atsushi Kanda,Yasushi Haga. Владелец: Seiko Epson Corp. Дата публикации: 2005-07-12.

Method of manufacturing a semiconductor device and semiconductor wafer

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Substrate and semiconductor device package and method for manufacturing the same

Номер патента: US20210327815A1. Автор: Shin-Luh Tarng,Ian HU. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2021-10-21.

Mask blank substrate, substrate with multilayer reflective film, reflective mask blank, reflective mask, method of manufacturing mask blank substrate, method of manufacturing substrate with reflective film and method of manufacturing semiconductor device

Номер патента: US09581895B2. Автор: Kazuhiro Hamamoto,Junichi Horikawa,Tsutomu Shoki,Toshihiko Orihara. Владелец: Hoya Corp. Дата публикации: 2017-02-28.

Method of manufacturing a semiconductor device and semiconductor device

Номер патента: US20050140000A1. Автор: Marc De Samber,Johannus Weekamp,Durandus Dijken. Владелец: Individual. Дата публикации: 2005-06-30.

Method of manufacturing semiconductor devices, corresponding substrate and semiconductor device

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Method of manufacturing a semiconductor device and semiconductor device

Номер патента: US20040157376A1. Автор: Marc De Samber,Johannus Weekamp,Durandus Dijken. Владелец: Individual. Дата публикации: 2004-08-12.

Method of manufacturing semiconductor device by plasma treatment and heat treatment, and semiconductor device

Номер патента: US09966447B2. Автор: Junya Nishii. Владелец: Toyoda Gosei Co Ltd. Дата публикации: 2018-05-08.

Method of manufacturing substrate with a multilayer reflective film, method of manufacturing a reflective mask blank, substrate with a multilayer reflective film, reflective mask blank, reflective mask and method of manufacturing a semiconductor device

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Method of contact formation between metal and semiconductor

Номер патента: EP3513427A1. Автор: Hua Chung,Yi-Chiau Huang,Xuebin Li. Владелец: Applied Materials Inc. Дата публикации: 2019-07-24.

Method of manufacturing semiconductor devices, corresponding substrate and semiconductor device

Номер патента: US20230005825A1. Автор: Mauro Mazzola. Владелец: STMICROELECTRONICS SRL. Дата публикации: 2023-01-05.

Method for manufacturing semiconductor device and semiconductor device

Номер патента: US20130075733A1. Автор: Toshihiko Saito,Atsuo Isobe,Kazuya Hanaoka,Sho Nagamatsu. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2013-03-28.

Method of manufacturing semiconductor structure and semiconductor structure

Номер патента: US20240313053A1. Автор: Kai Cheng. Владелец: Enkris Semiconductor Inc. Дата публикации: 2024-09-19.

Method of forming nanostructure, method of manufacturing semiconductor device using the same, and semiconductor device including nanostructure

Номер патента: US09899473B2. Автор: Hyeokshin Kwon,Hwansoo Suh,Insu Jeon,Youngtek OH. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-02-20.

Method for manufacturing semiconductor device and semiconductor device

Номер патента: US09536994B2. Автор: Toshihiko Saito,Atsuo Isobe,Kazuya Hanaoka,Sho Nagamatsu. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2017-01-03.

Method of manufacturing a semiconductor device and semiconductor device

Номер патента: US09530884B2. Автор: Till Schloesser,Andreas Meiser. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2016-12-27.

Method of manufacturing a semiconductor device and semiconductor device

Номер патента: US20060226558A1. Автор: Akihito Sakakidani,Toshinori Fukai. Владелец: NEC Electronics Corp. Дата публикации: 2006-10-12.

Method of manufacturing semiconductor device and semiconductor device

Номер патента: US12034069B2. Автор: Shigeki Yoshida. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2024-07-09.

Substrate equipped with multi-layer reflection film, reflection-type mask blank, reflection-type mask, and semiconductor device manufacturing process

Номер патента: US20200310239A1. Автор: Kazuhiro Hamamoto,Tsutomu Shoki,Yohei IKEBE. Владелец: Hoya Corp. Дата публикации: 2020-10-01.

Method of manufacturing semiconductor devices and semiconductor devices

Номер патента: US12040381B2. Автор: Cheng-Yi Peng,Bor-Zen Tien,Wen-Yuan Chen,Wen-Hsing Hsieh,Jon-Hsu Ho,Song-Bor Lee,Yi-Ju Hsu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-16.

Semiconductor device manufacturing method and semiconductor device manufacturing apparatus

Номер патента: US8883635B2. Автор: Masanori Shindou. Владелец: Lapis Semiconductor Co Ltd. Дата публикации: 2014-11-11.

Semiconductor device manufacturing method and semiconductor device manufacturing apparatus

Номер патента: US20130023117A1. Автор: Masanori Shindou. Владелец: Lapis Semiconductor Co Ltd. Дата публикации: 2013-01-24.

Method of manufacturing semiconductor devices and semiconductor devices

Номер патента: US20240322011A1. Автор: Cheng-Yi Peng,Bor-Zen Tien,Wen-Yuan Chen,Wen-Hsing Hsieh,Jon-Hsu Ho,Song-Bor Lee,Yi-Ju Hsu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-26.

Semiconductor device manufacturing method and semiconductor device

Номер патента: US9070696B2. Автор: Masahiro Kikuchi,Kazunaga Onishi,Rikihiro Maruyama,Masafumi TEZUKA. Владелец: Fuji Electric Co Ltd. Дата публикации: 2015-06-30.

Method of manufacturing semiconductor device and semiconductor device

Номер патента: US20240297250A1. Автор: Hao-Chung Kuo,Chia-Lung HUNG,Yi-Kai HSIAO. Владелец: Hon Hai Precision Industry Co Ltd. Дата публикации: 2024-09-05.

Method of manufacturing semiconductor device and semiconductor device

Номер патента: EP4425565A2. Автор: Hao-Chung Kuo,Chia-Lung HUNG,Yi-Kai HSIAO. Владелец: Hon Hai Precision Industry Co Ltd. Дата публикации: 2024-09-04.

Method of manufacturing semiconductor device and semiconductor device

Номер патента: EP4425565A3. Автор: Hao-Chung Kuo,Chia-Lung HUNG,Yi-Kai HSIAO. Владелец: Hon Hai Precision Industry Co Ltd. Дата публикации: 2024-09-18.

Semiconductor manufacturing apparatus and semiconductor device manufacturing method using the same

Номер патента: US09564298B2. Автор: Ik-Soo Kim,Myoung-woon Kim,Su-Ho Lee,Ju-Hee Lee,Jae-Beom Park,Won-hyuk Jang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-02-07.

Method of manufacturing semiconductor device and semiconductor device

Номер патента: US20150171021A1. Автор: Takeshi Watanabe,Takashi Imoto,Soichi Homma,Yuusuke Takano,Katsunori Shibuya. Владелец: Toshiba Corp. Дата публикации: 2015-06-18.

Semiconductor device including recess gate structure and method of manufacturing the same

Номер патента: US20240274713A1. Автор: Hyun-Yong Yu,Seung Geun JUNG,Mu Yeong SON. Владелец: SK hynix Inc. Дата публикации: 2024-08-15.

Polyimide resin composition for semiconductor devices, method of forming film in semiconductor devices using the same and semiconductor devices

Номер патента: US20110213075A1. Автор: Junichi Yamashita,Toshiyuki Goshima,Maw Soe Win,Ken Takanashi,Sigemasa Segawa. Владелец: PI R&D Co Ltd. Дата публикации: 2011-09-01.

Semiconductor memory device and method of manufacturing the same

Номер патента: US7608488B2. Автор: Susumu Yoshikawa,Yasuyuki Baba. Владелец: Toshiba Corp. Дата публикации: 2009-10-27.

Semiconductor device and method of manufacturing same

Номер патента: US20240258426A1. Автор: Kyoung Hwa Jung. Владелец: DB HiTek Co Ltd. Дата публикации: 2024-08-01.

Display substrate, method of manufacturing the same and method of manufacturing display panel

Номер патента: US09823524B2. Автор: Jun-Hyup Lee,Jae-Jin Lyu. Владелец: Samsung Display Co Ltd. Дата публикации: 2017-11-21.

Superjunction semiconductor device and method of manufacturing same

Номер патента: US20230223436A1. Автор: Myeong Bum PYUN,Min Gi JO,Jin Young Goh. Владелец: DB HiTek Co Ltd. Дата публикации: 2023-07-13.

Thin film transistor substrate, organic light-emitting apparatus including the same, method of manufacturing the thin film transistor substrate, and method of manufacturing the organic light-emitting apparatus

Номер патента: US09595694B2. Автор: Dong-Won Lee. Владелец: Samsung Display Co Ltd. Дата публикации: 2017-03-14.

Package substrate, method of manufacturing the package substrate and semiconductor package including the package substrate

Номер патента: US20140246771A1. Автор: Tae-Young Yoon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2014-09-04.

Semiconductor devices and methods of manufacturing the same

Номер патента: US20050139912A1. Автор: Kwan-Ju Koh. Владелец: DongbuAnam Semiconductor Inc. Дата публикации: 2005-06-30.

Array substrate, method of manufacturing the same and display device

Номер патента: US09553108B2. Автор: Hee Cheol Kim,Young Suk Song,Seong Yeol Yoo,Seung Jin Choi. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2017-01-24.

(AI,Ga,In)N-Based compound semiconductor and method of fabricating the same

Номер патента: EP1772909A3. Автор: Chung Hoon Lee. Владелец: Seoul Optodevice Co Ltd. Дата публикации: 2009-05-06.

Method of manufacturing array substrate and array substrate

Номер патента: US20210408051A1. Автор: Pengfei Yu. Владелец: Wuhan China Star Optoelectronics Technology Co Ltd. Дата публикации: 2021-12-30.

Method of manufacturing array substrate and array substrate

Номер патента: US11309337B2. Автор: Pengfei Yu. Владелец: Wuhan China Star Optoelectronics Technology Co Ltd. Дата публикации: 2022-04-19.

Semiconductor device and method of forming inductor over insulating material filled trench in substrate

Номер патента: SG185341A1. Автор: Seung Uk Yoon,YongTaek Lee,Meenakshi Padmanathan. Владелец: Stats Chippac Ltd. Дата публикации: 2012-11-29.

Semiconductor devices, FinFET devices and methods of forming the same

Номер патента: US09876083B2. Автор: Chia-Ming Tsai,Wei-Cheng Wang,Miin-Jang Chen,Liang-Chen Chi,Chin-Kun Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-01-23.

Method of fabricating specimen for analyzing defects of semiconductor device

Номер патента: US5840205A. Автор: Doo-Jin Park,Jeong-Hoi Koo. Владелец: Hyundai Electronics Industries Co Ltd. Дата публикации: 1998-11-24.

Heteroepitaxial semiconductor devices with enhanced thermal dissipation

Номер патента: US20240355918A1. Автор: Matt King,Christer Hallin,Thomas Kuhr. Владелец: Woflspeed Inc. Дата публикации: 2024-10-24.

Film composition for semiconductor, method of manufacturing film composition for semiconductor, method of manufacturing member for semiconductor, method of manufacturing process member for semiconductor and semiconductor device

Номер патента: TWI712652B. Автор: 田中博文,井上浩二,茅場靖剛. Владелец: 日商三井化學股份有限公司. Дата публикации: 2020-12-11.

Laminated body, method of manufacturing substrate, substrate, and semiconductor device

Номер патента: US8455765B2. Автор: Kenichi Kaneda,Junpei Morimoto. Владелец: Sumitomo Bakelite Co Ltd. Дата публикации: 2013-06-04.

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Номер патента: TW201728686A. Автор: 田中博文,井上浩二,茅場靖剛. Владелец: 三井化學股份有限公司. Дата публикации: 2017-08-16.

Doped, passivated graphene nanomesh, method of making the doped, passivated graphene nanomesh, and semiconductor device including the doped, passivated graphene nanomesh

Номер патента: US20150069305A1. Автор: Dennis M. Newns,Ahmed Maarouf,Glenn John Martyna,Ahmed Abou-Kandil,Hisham Mohamed. Владелец: Egypt Nanotechnology Center EGNC. Дата публикации: 2015-03-12.

Method of forming a diode for integration with a semiconductor device and method of forming a transistor device having an integrated diode

Номер патента: EP1102318B1. Автор: Evgueniy Stefanov,Jean-Michel Reynes,Ivana Deram. Владелец: Semiconductor Components Industries LLC. Дата публикации: 2005-06-29.

Manufacture method of TFT substrate and sturcture thereof

Номер патента: US09614036B2. Автор: Jun Wang. Владелец: Shenzhen China Star Optoelectronics Technology Co Ltd. Дата публикации: 2017-04-04.

Manufacture method of dual gate oxide semiconductor TFT substrate and structure thereof

Номер патента: US09570620B2. Автор: Longqiang Shi,Xiaowen LV,Shimin Ge,Hejing ZHANG,Chihyuan Tseng,Chihyu SU,Wenhui Li. Владелец: Shenzhen China Star Optoelectronics Technology Co Ltd. Дата публикации: 2017-02-14.

Manufacture method of dual gate oxide semiconductor TFT substrate and structure thereof

Номер патента: US09543442B2. Автор: Longqiang Shi,Xiaowen LV,Shimin Ge,Hejing ZHANG,Chihyuan Tseng,Chihyu SU,Wenhui Li. Владелец: Shenzhen China Star Optoelectronics Technology Co Ltd. Дата публикации: 2017-01-10.

Manufacutrig method of array substrates, array substrates, and display panels

Номер патента: US09798207B2. Автор: Yutong HU. Владелец: Shenzhen China Star Optoelectronics Technology Co Ltd. Дата публикации: 2017-10-24.

Semiconductor device, printed circuit board (PCB), and method of interfacing control pin (gate pin) of a power semiconductor device (MOSFET) to a printed circuit board (PCB) in a battery management system (BMS)

Номер патента: AU2023204342B2. Автор: James Richard Stanfield,James P. Mcbride. Владелец: Noco Co. Дата публикации: 2024-08-15.

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Номер патента: US12080634B2. Автор: James Richard Stanfield,James P. Mcbride. Владелец: Noco Co. Дата публикации: 2024-09-03.

Metal field plates and methods of making the same

Номер патента: US20230411463A1. Автор: Chien-Hung Lin,Tsai-Hao Hung. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-12-21.

Semiconductor device and manufacturing method thereof

Номер патента: US09923000B2. Автор: Jun Koyama. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2018-03-20.

Methods of forming low defect replacement fins for a FinFET semiconductor device and the resulting devices

Номер патента: US09614058B2. Автор: Jody Fronheiser,Ajey P. Jacob,Kerem Akarvardar,Witold P. Maszara. Владелец: Globalfoundries Inc. Дата публикации: 2017-04-04.

Carbon nano-tube resistor, semiconductor device, and method of manufacturing carbon nano-tube resistor and semiconductor device

Номер патента: JP2013168655A. Автор: 薫成田,Kaoru Narita. Владелец: NEC Corp. Дата публикации: 2013-08-29.

Method of component assembly on a substrate

Номер патента: US20140220670A1. Автор: QIAO HONG,Michael Gal,Peter John Reece,John Justin Gooding,Till Böcking,Katharina Gaus,Kristopher A. Kilian. Владелец: NEWSOUTH INNOVATIONS PTY LTD. Дата публикации: 2014-08-07.

Method of component assembly on a substrate

Номер патента: WO2009055862A8. Автор: QIAO HONG,Michael Gal,Peter John Reece,Kristopher A Kilian,John Justin Gooding,Katharina Gaus,Till Boecking. Владелец: Till Boecking. Дата публикации: 2009-08-20.

Method of component assembly on a substrate

Номер патента: EP2212239A1. Автор: QIAO HONG,Michael Gal,Peter John Reece,Kristopher A Kilian,John Justin Gooding,Till Böcking,Katharina Gaus. Владелец: NEWSOUTH INNOVATIONS PTY LTD. Дата публикации: 2010-08-04.

Method of fabricating array substrate, array substrate and display device

Номер патента: US20230230983A1. Автор: WEI YANG,Xinhong Lu. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2023-07-20.

Semiconductor structure and manufacturing method of the same

Номер патента: US20230017723A1. Автор: Ming-Shiang LIN,Kuo-Yu Wu,Tse-Hua LU,Tzung-Yi Tsai,Wan-Lin Chiang,Hong-Ping Luo. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-01-19.

Semiconductor device and semiconductor device manufacturing method

Номер патента: US20170365629A1. Автор: Koichi Kaneko,Hirokazu Fujimaki. Владелец: Lapis Semiconductor Co Ltd. Дата публикации: 2017-12-21.

Photoelectric conversion apparatus, method of driving the apparatus, semiconductor substrate, and equipment

Номер патента: US20240136370A1. Автор: Hideki Ikedo,Shinya Ichino. Владелец: Canon Inc. Дата публикации: 2024-04-25.

Methods of manufacturing phase-change memory device and semiconductor device

Номер патента: US20130102120A1. Автор: Hye Jin Seo,Keum Bum Lee. Владелец: Hynix Semiconductor Inc. Дата публикации: 2013-04-25.

Electro-optical device, method of manufacturing the same, electronic apparatus, and semiconductor device

Номер патента: US20070087534A1. Автор: Masahiro Yasukawa. Владелец: Seiko Epson Corp. Дата публикации: 2007-04-19.

Semiconductor device comprising 3d channel region and method of manufacturing the same

Номер патента: US20190319106A1. Автор: Yong-Keon Choi. Владелец: DB HiTek Co Ltd. Дата публикации: 2019-10-17.

Semiconductor device and method of manufacturing the same

Номер патента: US20020036350A1. Автор: Hideo Miura,Tomio Iwasaki,Shinji Nishihara,Hiroshi Moriya,Masashi Sahara. Владелец: HITACHI LTD. Дата публикации: 2002-03-28.

Semiconductor device and method of manufacturing the same

Номер патента: US6545362B2. Автор: Hideo Miura,Tomio Iwasaki,Shinji Nishihara,Hiroshi Moriya,Masashi Sahara. Владелец: HITACHI LTD. Дата публикации: 2003-04-08.

System for designing integrated circuit using extracted model parameter and method of manufacturing integrated circuit using the same

Номер патента: US20200004911A1. Автор: Yo-Han Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-01-02.

Method of manufacturing a semiconductor sensor device and semiconductor sensor device obtained with such method

Номер патента: CN101553726A. Автор: N·N·卡亚. Владелец: KONINKLIJKE PHILIPS ELECTRONICS NV. Дата публикации: 2009-10-07.

Electrode, method of manufacturing the same, ferroelectric memory, and semiconductor device

Номер патента: US7163828B2. Автор: Takeshi Kijima,Eiji Natori,Koji Ohashi. Владелец: Seiko Epson Corp. Дата публикации: 2007-01-16.

Circuit substrate having circuit wire formed of conductive polarization particles, method of manufacturing the circuit substrate and semiconductor package having the circuit wire

Номер патента: US20090321953A1. Автор: Tae Min Kang. Владелец: Hynix Semiconductor Inc. Дата публикации: 2009-12-31.

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Номер патента: US09786332B2. Автор: Scott R. Cyr. Владелец: Micron Technology Inc. Дата публикации: 2017-10-10.

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Номер патента: KR100940649B1. Автор: 이완기. Владелец: 주식회사 동부하이텍. Дата публикации: 2010-02-05.

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Номер патента: WO2011019429A3. Автор: Jovan Trujillo,Curtis Moyer. Владелец: Arizona Technology Enterprises. Дата публикации: 2011-04-28.

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Номер патента: TW200504812A. Автор: Youri Ponomarev. Владелец: Koninkl Philips Electronics Nv. Дата публикации: 2005-02-01.

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Номер патента: US20240304676A1. Автор: Takaya MIYASE,Hideyuki Hisanabe. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2024-09-12.

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Номер патента: US6773977B1. Автор: Evgueniy Stefanov,Jean-Michel Reynes,Ivana Deram. Владелец: Semiconductor Components Industries LLC. Дата публикации: 2004-08-10.

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Номер патента: US20180031931A1. Автор: Qin Fang. Владелец: Wuhan China Star Optoelectronics Technology Co., Ltd.. Дата публикации: 2018-02-01.

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Номер патента: US20200243607A1. Автор: Tian Xueyan. Владелец: . Дата публикации: 2020-07-30.

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Номер патента: US20090167733A1. Автор: Bong-Jun Lee,Byeong-Jae Ahn,Yeo-Geon YOON,Hong-Woo Lee,Hyuk-Jin Kim,Jong-Oh Kim,Gyu-Tae KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2009-07-02.

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Номер патента: US20110090445A1. Автор: Hee-Joon Kim,Jeong-Eun Park. Владелец: Individual. Дата публикации: 2011-04-21.

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Номер патента: US8415186B2. Автор: Yong Cai,Hung-Shen Chu. Владелец: Hong Kong Applied Science and Technology Research Institute ASTRI. Дата публикации: 2013-04-09.

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Номер патента: TW201132268A. Автор: Tatsuya Ito,Satoshi Hirano,Tetsuo Suzuki,Atsuhiko Sugimoto,Shinnosuke Maeda,Takuya Hando. Владелец: Ngk Spark Plug Co. Дата публикации: 2011-09-16.

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Номер патента: US8859077B2. Автор: Satoshi Hirano,Tetsuo Suzuki,Shinnosuke Maeda. Владелец: NGK Spark Plug Co Ltd. Дата публикации: 2014-10-14.

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Номер патента: US20100279394A1. Автор: QIAO HONG,Michael Gal,Peter John Reece,John Justin Gooding,Till Böcking,Katharina Gaus,Kristopher A. Kilian. Владелец: NEWSOUTH INNOVATIONS PTY LTD. Дата публикации: 2010-11-04.

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Номер патента: US20130248818A1. Автор: Choi Seung Kyu,Kim Chae Hon,Jung Jung Whan. Владелец: Seoul Opto Device Co., Ltd.. Дата публикации: 2013-09-26.

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Номер патента: US20160013296A1. Автор: Jacob Ajey P.,Maszara Witold P.,Akarvardar Kerem,Fronheiser Jody. Владелец: . Дата публикации: 2016-01-14.

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Номер патента: US20140264488A1. Автор: Jacob Ajey P.,Maszara Witold P.,Akarvardar Kerem,Fronheiser Jody. Владелец: . Дата публикации: 2014-09-18.

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Номер патента: US20150194491A1. Автор: Schmidt Gerhard,Bauer Josef-Georg. Владелец: . Дата публикации: 2015-07-09.

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Номер патента: US20150270435A1. Автор: Choi Seung Kyu,Kim Chae Hon,Jung Jung Whan. Владелец: . Дата публикации: 2015-09-24.

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Номер патента: US20240096910A1. Автор: WEI YANG,Xinhong Lu. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2024-03-21.

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Номер патента: US11923382B2. Автор: WEI YANG,Xinhong Lu. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2024-03-05.

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Номер патента: US20140054787A1. Автор: Lee Seok-Won,Lee Young-Ho,SHIN Yoocheol,Eun Dongseog,Lee Joonhee. Владелец: . Дата публикации: 2014-02-27.

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Номер патента: US20200091199A1. Автор: Song Wei,Liu Jun,Zhou Bin,Li Wei,WANG Dongfang,ZHAO Ce,Hu Yingbin,Ding Yuankui. Владелец: . Дата публикации: 2020-03-19.

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Номер патента: US20170169152A1. Автор: Lin Jian-Hong,Lee Te-Liang,LEE YU CHING,HSIA JYH-WEEI. Владелец: . Дата публикации: 2017-06-15.

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Номер патента: US20160254285A1. Автор: Long Chunping,Wang Zuqiang. Владелец: BOE TECHNOLOGY CO., LTD.. Дата публикации: 2016-09-01.

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Номер патента: US20180308942A1. Автор: Wang Xing. Владелец: . Дата публикации: 2018-10-25.

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Номер патента: US20150340455A1. Автор: Sun Bing,CAO Zhanfeng,YAO Qi,DING Luke,KONG Xiangchun. Владелец: BOE Technology Group Co., Ltd.. Дата публикации: 2015-11-26.

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Номер патента: US9748280B2. Автор: Chunping Long,Zuqiang Wang. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2017-08-29.

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Номер патента: CN104638016A. Автор: 刘威,姜春生,李旭远. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2015-05-20.

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Номер патента: US5828100A. Автор: Yutaka Kobayashi,Akihiko Tamba. Владелец: HITACHI LTD. Дата публикации: 1998-10-27.

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Номер патента: US20140051865A1. Автор: Takimiya Kazuo. Владелец: . Дата публикации: 2014-02-20.

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Номер патента: US20150076502A1. Автор: Sagawa Hiroshi,Toyomura Naobumi. Владелец: . Дата публикации: 2015-03-19.

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Номер патента: US20190131552A1. Автор: XIE Chunyan,Zhang Song,HSIEH Mingche. Владелец: BOE Technology Group Co., Ltd.. Дата публикации: 2019-05-02.

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Номер патента: US20180145170A1. Автор: Peterson Eric,Nayak Rajesh,Dix Greg,Shumate Jina. Владелец: MICROCHIP TECHNOLOGY INCORPORATED. Дата публикации: 2018-05-24.

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Номер патента: US20040051519A1. Автор: Kwang-Yung Cheong,Jun-Sung Kim,Byung-Wook Choi. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2004-03-18.

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Номер патента: JP4912624B2. Автор: 正和大橋. Владелец: Fujikura Ltd. Дата публикации: 2012-04-11.

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Номер патента: CN1908251A. Автор: 松本直树,元木健作,冈久拓司. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2007-02-07.

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Номер патента: CN106653861A. Автор: 方业周,徐敬义,孙超超,任艳伟,张琨鹏. Владелец: Ordos Yuansheng Optoelectronics Co Ltd. Дата публикации: 2017-05-10.

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Номер патента: US20090242884A1. Автор: Hiroshi Sagawa,Naobumi Toyomura. Владелец: Sony Corp. Дата публикации: 2009-10-01.

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Номер патента: US20210066400A1. Автор: Wang Qing,Wang Yu,Tong Hui,Li Dongsheng,Yang Shengji,LU Pengcheng,HUANG Kuanta,DONG Yongfa,YUAN Xiong,SHEN Xiaobin,ZOU Rongyuan. Владелец: . Дата публикации: 2021-03-04.

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Номер патента: CN106898578B. Автор: 刘军,王明,周斌,汪军. Владелец: Hefei Xinsheng Optoelectronics Technology Co Ltd. Дата публикации: 2019-08-06.

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Номер патента: US20180061870A1. Автор: Yang Wei. Владелец: . Дата публикации: 2018-03-01.

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Номер патента: US20150129881A1. Автор: Cheng Jun,WANG Dongfang,KONG Xiangyong,Sun Hongda. Владелец: . Дата публикации: 2015-05-14.

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Номер патента: US20200313004A1. Автор: BAI Lu,WANG Shijun,BAO Zhiying. Владелец: . Дата публикации: 2020-10-01.

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Номер патента: US20160336452A1. Автор: Wang Meili. Владелец: . Дата публикации: 2016-11-17.

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Номер патента: US20180019346A1. Автор: Zhang Bin,CAO Zhanfeng,YAO Qi,He Xiaolong,LI Zhengliang,GAO Jincheng,KONG Xiangchun. Владелец: . Дата публикации: 2018-01-18.

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Номер патента: US20170110488A1. Автор: SUN Shuang,LV Zhijun,ZHANG Fangzhen,NIU Jing. Владелец: . Дата публикации: 2017-04-20.

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Номер патента: US20210175261A1. Автор: QI Yonglian,ZHAO Hebin,QU Lianjie,LIU Shuai,GUI Bingqiang,SHI Guangdong. Владелец: . Дата публикации: 2021-06-10.

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Номер патента: US20210193687A1. Автор: QI Yonglian,ZHAO Hebin,LIU CHAO,QU Lianjie,LIU Shuai,Zhang Shan,SHI Guangdong,JIA Ning. Владелец: . Дата публикации: 2021-06-24.

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Номер патента: US20200168745A1. Автор: CAO Zhanfeng,YAO Qi,Ban Shengguang. Владелец: BOE Technology Group Co., Ltd.. Дата публикации: 2020-05-28.

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Номер патента: US20200176604A1. Автор: WANG Ling,LI Quanhu,XU Pan,LIN Yicheng,GAI Cuili,ZHANG Baoxia. Владелец: . Дата публикации: 2020-06-04.

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Номер патента: US20210233978A1. Автор: CHEN ZHU,Xu Haifeng,Cao Xin,DAI Ming,FAN Haoyuan,LIU Hongcan,YUN Kwiyoung. Владелец: . Дата публикации: 2021-07-29.

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Номер патента: US20210280615A1. Автор: Yang Wei,LU Xinhong. Владелец: . Дата публикации: 2021-09-09.

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Номер патента: US20160300852A1. Автор: Chai Chongchul,Kim Sunghwan,Park Junhyun,Shin Kyoungju. Владелец: . Дата публикации: 2016-10-13.

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Номер патента: US20160336458A1. Автор: Zhang Bin,CAO Zhanfeng,YAO Qi,He Xiaolong,LI Zhengliang,GAO Jincheng,KONG Xiangchun. Владелец: . Дата публикации: 2016-11-17.

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Номер патента: US20200357829A1. Автор: WEI YANG,Xinhong Lu. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2020-11-12.

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Номер патента: JP4972094B2. Автор: イ、ヨン−チョル,イ、ジェ−スン,ノ、ジョン−ケン. Владелец: LG Chem Ltd. Дата публикации: 2012-07-11.

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Номер патента: CN104362179A. Автор: 张莹,李鑫,朱红,于洪俊. Владелец: Beijing BOE Optoelectronics Technology Co Ltd. Дата публикации: 2015-02-18.

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Номер патента: KR101015459B1. Автор: 토시오 아라키,야스요시 이토오. Владелец: 미쓰비시덴키 가부시키가이샤. Дата публикации: 2011-02-18.

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Номер патента: CN102254861B. Автор: 许哲豪,姚晓慧,薛景峰. Владелец: Shenzhen China Star Optoelectronics Technology Co Ltd. Дата публикации: 2014-01-22.

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Номер патента: CN110838467A. Автор: 聂晓辉. Владелец: Wuhan China Star Optoelectronics Technology Co Ltd. Дата публикации: 2020-02-25.

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Номер патента: TW200507120A. Автор: Sao-Ling Chiu,Ling-Chen Kung,Jong-Rong Jan,Tsai-Hua Lu. Владелец: Unitive Electronics Inc. Дата публикации: 2005-02-16.

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Номер патента: US20100041175A1. Автор: Sebastien Dubois,Nicolas Enjalbert,Remi Monna. Владелец: Commissariat a lEnergie Atomique CEA. Дата публикации: 2010-02-18.

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Номер патента: US8969128B2. Автор: Jong-hyun Park,Mi-Jung Lee,Soo-young Yoon,Jae-Kyung Choi,Yoon-Dong CHO. Владелец: LG Display Co Ltd. Дата публикации: 2015-03-03.

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Номер патента: US11257957B2. Автор: Ling Wang,Pan Xu,Baoxia ZHANG,Cuili Gai,Yicheng Lin,Quanhu LI. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2022-02-22.

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Номер патента: US7081404B2. Автор: Sao-Ling Chiu,Ling-Chen Kung,Jong-Rong Jan,Tsai-Hua Lu. Владелец: Unitive Electronics Inc. Дата публикации: 2006-07-25.

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Номер патента: CN110764364A. Автор: 张笑. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2020-02-07.

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Номер патента: CN106409845A. Автор: 王栋,李红敏,王迎,廖力勍. Владелец: Hefei BOE Optoelectronics Technology Co Ltd. Дата публикации: 2017-02-15.

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Номер патента: US20090286336A1. Автор: Chien-sen Weng,Ching-Chieh Shih,An-Thung Cho,Chia-Tien Peng,Kun-Chih Lin,Yuan-Jun Hsu,Hang-Wei Tseug,Ming-Huang Chuang. Владелец: AU OPTRONICS CORP. Дата публикации: 2009-11-19.

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Номер патента: US20220059658A1. Автор: Hori Tsutomu,Shiomi Hiromu,MIYASE Takaya. Владелец: . Дата публикации: 2022-02-24.

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Номер патента: US20150206959A1. Автор: Liu Qizhi,Benoit John J.,Elliott James R.. Владелец: . Дата публикации: 2015-07-23.

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Номер патента: NL2018614B1. Автор: OHTANI Kinya. Владелец: Shindengen Electric Mfg. Дата публикации: 2018-02-01.

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Номер патента: NL2018616B1. Автор: OHTANI Kinya. Владелец: Shindengen Electric Mfg. Дата публикации: 2018-02-01.

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Номер патента: US12044974B2. Автор: Taeyoung Kim,YunSeok Choi,Hoon Han,Moonyoung KIM,Hyojin Yun,Woojung Park,SeungWon Kim,Jinhye Bae,Hyunseop Shin,Mintae Lee,Moonchang Kim,Cheolmo Yang. Владелец: KPX CHEMICAL CO Ltd. Дата публикации: 2024-07-23.

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Номер патента: US09627205B2. Автор: Jae-Hyun Kim,Jung-Sik Choi,Su-Jin KWON,Jun Won HAN,Hye-Ryun KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-04-18.

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Номер патента: RU2218365C2. Автор: С.Н. Чвалун,Акио ТАКАХАСИ,И.Е. Кардаш,А.В. Пебалк,К.А. Маилян,Юичи САТСУ,Харуказу НАКАЙ. Владелец: Федеральное государственное унитарное предприятие "Научно-исследовательский физико-химический институт им. Л.Я.Карпова". Дата публикации: 2003-12-10.

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Номер патента: US20240105637A1. Автор: Akio Yamano,Yuta EBUKURO. Владелец: Fuji Electric Co Ltd. Дата публикации: 2024-03-28.

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Номер патента: US20220344219A1. Автор: Tatsuro SAWADA. Владелец: Kyocera Corp. Дата публикации: 2022-10-27.

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Номер патента: US8815652B2. Автор: Fumihiko Inoue,Kentaro Sera. Владелец: SPANSION LLC. Дата публикации: 2014-08-26.

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Номер патента: US20230361193A1. Автор: Hyun Ho Yoo,Sung Joo Lee,Sung Pyo BAEK,Su Min JEON,Jingjie NIU. Владелец: Sungkyunkwan University Research and Business Foundation. Дата публикации: 2023-11-09.

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Номер патента: US20150263212A1. Автор: Hideo Numata,Mokuji Kageyama,Shinji Uya,Nagataka Tanaka. Владелец: Toshiba Corp. Дата публикации: 2015-09-17.

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Номер патента: US20170229415A1. Автор: Daisuke Hiratsuka,Yuchen Hsu. Владелец: Toshiba Corp. Дата публикации: 2017-08-10.

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Номер патента: US09837326B2. Автор: Akira Yajima. Владелец: Renesas Electronics Corp. Дата публикации: 2017-12-05.

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Номер патента: US09627347B2. Автор: Motohiro Suzuki,Naoya Watanabe,Masahiro Aoyagi,Shunsuke Nemoto,Fumiki Kato,Thanh Tung Bui,Lai Na Ma. Владелец: National Institute of Advanced Industrial Science and Technology AIST. Дата публикации: 2017-04-18.

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Номер патента: US20190097041A1. Автор: Kinya Ohtani. Владелец: Shindengen Electric Manufacturing Co Ltd. Дата публикации: 2019-03-28.

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Номер патента: US7622351B2. Автор: Kenya Kobayashi. Владелец: NEC Electronics Corp. Дата публикации: 2009-11-24.

Method of manufacturing semiconductor device and semiconductor device

Номер патента: US20090039473A1. Автор: Masayuki Hata,Ryoji Hiroyama,Yasuto Miyake. Владелец: Sanyo Electric Co Ltd. Дата публикации: 2009-02-12.

Method of manufacturing semiconductor device and semiconductor device

Номер патента: US20120142167A1. Автор: Masayuki Hata,Ryoji Hiroyama,Yasuto Miyake. Владелец: Sanyo Electric Co Ltd. Дата публикации: 2012-06-07.

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Номер патента: US20230008405A1. Автор: Yoshiyuki Fukumoto,Mitsunori Toshishige. Владелец: Canon Inc. Дата публикации: 2023-01-12.

Double-sided mounting board, method of manufacturing double-sided mounting board, and semiconductor laser

Номер патента: MY197093A. Автор: Aoki Hisashi,KIKUCHI Naoto,TAKEMORI Hideaki. Владелец: Hitachi Power Solutions Co Ltd. Дата публикации: 2023-05-24.

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Номер патента: SG10202005312XA. Автор: Aoki Hisashi,KIKUCHI Naoto,TAKEMORI Hideaki. Владелец: Hitachi Power Solutions Co Ltd. Дата публикации: 2021-02-25.

Methods of coating an electrically conductive substrate and related electrodepositable compositions

Номер патента: US09520591B2. Автор: Stuart D. Hellring,Randy E. Daughenbaugh,Robin M. Peffer. Владелец: PPG Industries Ohio Inc. Дата публикации: 2016-12-13.

Method of manufacturing battery electrode substrate and battery electrode substrate

Номер патента: CA2267209A1. Автор: Hirofumi Sugikawa. Владелец: Katayama Special Industries, Ltd.. Дата публикации: 1998-04-09.

Method of forming floating structure of substrate and method of manufacturing floating structure gate electrode and field emission device employing the floating structure

Номер патента: US6780663B2. Автор: Young-Jun Park,In-taek Han. Владелец: Samsung SDI Co Ltd. Дата публикации: 2004-08-24.

Black electrode, method of manufacturing black electrode substrate and display device

Номер патента: US10031601B2. Автор: Kenzo Fukuyoshi,Yukihiro Kimura. Владелец: Toppan Printing Co Ltd. Дата публикации: 2018-07-24.

Method of sputter-coating substrates or of manufacturing sputter coated substrates and apparatus

Номер патента: US20230005725A1. Автор: Romeo GOOD,Marco PADRUN,Edmund SCHÜNGEL,Silvia Schwyn Thöny,Silvio Gees. Владелец: EVATEC AG. Дата публикации: 2023-01-05.

Method of manufacturing battery electrode substrate and battery electrode substrate

Номер патента: EP0964465A1. Автор: Hirofumi Sugikawa. Владелец: Katayama Special Industries Ltd. Дата публикации: 1999-12-15.

Method of directly patterning stretchable substrate and stretchable electrode fabricated by the same

Номер патента: US11839033B2. Автор: Soong Ju Oh,Jun Sung BANG. Владелец: KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION. Дата публикации: 2023-12-05.

Material deposition apparatus, method of depositing material on a substrate, and material deposition system

Номер патента: EP4326919A1. Автор: Stefan Bangert,Tamara HEINTZ,Suresh MANIKKOTH KOLLARATH,Ramgopal CHAKKARAVARTHY RAMASAMY. Владелец: Applied Materials Inc. Дата публикации: 2024-02-28.

Manufacturing method of composite carbon-silicon cathode substrate and composite carbon-silicon cathode substrate manufactured by manufacturing method

Номер патента: CN112086624A. Автор: 赖鸿政,林正崧,张曾隆. Владелец: Shih Hua Technology Ltd. Дата публикации: 2020-12-15.

Methods of Coating an Electrically Conductive Substrate and Related Electrodepositable Compositions

Номер патента: US20160020455A1. Автор: Peffer Robin M.,Hellring Stuart D.,DAUGHENBAUGH RANDY E.. Владелец: PPG Industries Ohio, Inc.. Дата публикации: 2016-01-21.

METHODS OF COATING AN ELECTRICALLY CONDUCTIVE SUBSTRATE AND RELATED ELECTRODEPOSITABLE COMPOSITIONS

Номер патента: US20140144778A1. Автор: Peffer Robin M.,Hellring Stuart D.,DAUGHENBAUGH RANDY E.. Владелец: PPG Industries Ohio, Inc.. Дата публикации: 2014-05-29.

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Номер патента: US20180137949A1. Автор: Hellring Stuart D.,DAUGHENBAUGH RANDY E.. Владелец: . Дата публикации: 2018-05-17.

Methods of Coating an Electrically Conductive Substrate and Related Electrodepositable Compositions

Номер патента: US20150357079A1. Автор: Hellring Stuart D.,DAUGHENBAUGH RANDY E.. Владелец: PPG Industries Ohio, Inc.. Дата публикации: 2015-12-10.

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Номер патента: US20160380255A1. Автор: Vanier Noel R.,Hung Cheng-Hung,Hellring Stuart D.,DAUGHENBAUGH RANDY E.. Владелец: . Дата публикации: 2016-12-29.

Methods of coating an electrically conductive substrate and related electrodepositable compositions including graphenic carbon particles

Номер патента: US10763490B2. Автор: Cheng-Hung Hung,Stuart D. Hellring,Noel R. Vanier,Randy E. Daughenbaugh. Владелец: PPG Industries Ohio Inc. Дата публикации: 2020-09-01.

Method of wetting low surface energy substrate and a system therefor

Номер патента: EP3981040A1. Автор: Alexander L. AGAPOV. Владелец: WL Gore and Associates Inc. Дата публикации: 2022-04-13.

Method of reutilizing battery, integrated circuit substrate and electronic part

Номер патента: JPS63197592A. Автор: ヨーゼフ　ハヌリク. Владелец: Recytec SA. Дата публикации: 1988-08-16.

Methods of coating an electrically conductive substrate and related electrodepositable compositions

Номер патента: KR101676218B1. Автор: 스튜어트 디 헬링,로빈 엠 페퍼,랜디 이 다우겐바우. Владелец: 피피지 인더스트리즈 오하이오 인코포레이티드. Дата публикации: 2016-11-14.

Methods of coating an electrically conductive substrate and related electrodepositable compositions

Номер патента: US9870844B2. Автор: Stuart D. Hellring,Randy E. Daughenbaugh. Владелец: PPG Industries Ohio Inc. Дата публикации: 2018-01-16.

Method of electroless deposition on a substrate and catalyst solution therefor

Номер патента: US3011920A. Автор: Jr Charles R Shipley. Владелец: Shipley Co Inc. Дата публикации: 1961-12-05.

Method of depositing material on a substrate, and system configured for depositing material on a substrate with facing sputter targets

Номер патента: WO2023020709A1. Автор: Thomas Werner ZILBAUER,Christopher MALMS. Владелец: Applied Materials, Inc.. Дата публикации: 2023-02-23.

Methods of coating an electrically conductive substrate and related electrodepositable compositions

Номер патента: WO2017031400A1. Автор: Stuart D. Hellring,Randy E. Daughenbaugh. Владелец: PPG Industries Ohio, Inc.. Дата публикации: 2017-02-23.

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Номер патента: US20240244861A1. Автор: Dong Li. Владелец: Beijing BOE Technology Development Co Ltd. Дата публикации: 2024-07-18.

Method of manufacturing a wiring substrate and an electronic instrument

Номер патента: US7538031B2. Автор: Noboru Uehara,Kazuaki Sakurada,Tsuyoshi Shintate. Владелец: Seiko Epson Corp. Дата публикации: 2009-05-26.

Method of manufacturing a wiring substrate and an electronic instrument

Номер патента: US20060068525A1. Автор: Noboru Uehara,Kazuaki Sakurada,Tsuyoshi Shintate. Владелец: Seiko Epson Corp. Дата публикации: 2006-03-30.

Method of fabricating quantum dots layer, substrate, and display apparatus

Номер патента: WO2023097540A9. Автор: Zhuo Chen. Владелец: Beijing Boe Technology Development Co., Ltd.. Дата публикации: 2023-11-02.

Method of fabricating quantum dots layer, substrate, and display apparatus

Номер патента: US20240215426A1. Автор: Zhuo Chen. Владелец: Beijing BOE Technology Development Co Ltd. Дата публикации: 2024-06-27.

Method of manufacturing semiconductor device, and semiconductor device

Номер патента: US20170365981A1. Автор: Eiji Nakai,Hiroaki Tsuchiya,Harunaka Yamaguchi. Владелец: Mitsubishi Electric Corp. Дата публикации: 2017-12-21.

Method of manufacturing semiconductor device, and semiconductor device

Номер патента: US09948064B2. Автор: Eiji Nakai,Hiroaki Tsuchiya,Harunaka Yamaguchi. Владелец: Mitsubishi Electric Corp. Дата публикации: 2018-04-17.

Integrated circuit device, memory device, and method of manufacturing

Номер патента: US20240334689A1. Автор: Chia-En HUANG,Meng-Sheng CHANG,I-Hsin Yang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-03.

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Номер патента: US12016234B2. Автор: Ke Liu,Jie Li,Xiaoqi Ding,Jiali WANG,Guoyi Cui,Xinlei YANG. Владелец: Chengdu BOE Optoelectronics Technology Co Ltd. Дата публикации: 2024-06-18.

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Номер патента: US20130023179A1. Автор: Jin-Won Sun,Heung-Yeol Na. Владелец: Samsung Display Co Ltd. Дата публикации: 2013-01-24.

Thin-film probe sheet and method of manufacturing the same, probe card, and semiconductor chip inspection apparatus

Номер патента: US20100301884A1. Автор: Akio Hasebe,Kenji Kawakami,Akira Yabushita,Yasunori Narizuka,Etsuko Takane. Владелец: Renesas Electronics Corp. Дата публикации: 2010-12-02.

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Номер патента: US20130023071A1. Автор: Sok-Won Noh. Владелец: Samsung Display Co Ltd. Дата публикации: 2013-01-24.

Method of manufacturing metal-base substrate and method of manufacturing circuit board

Номер патента: KR101829195B1. Автор: 다케시 미야카와,다이키 니시,히데노리 이시쿠라,가쓰노리 야시마,겐스케 오코시. Владелец: 덴카 주식회사. Дата публикации: 2018-02-14.

Autonomous initialization method of facing port of semiconductor integrated circuit and semiconductor integrated circuit

Номер патента: US20140035633A1. Автор: Daisuke Ito,Takeshi Owaki,Atsushi Morosawa,Junji Ichimiya,Norihiko Fukuzumi. Владелец: Fujitsu Ltd. Дата публикации: 2014-02-06.

Synchronization method of delay locked loop, delay locked loop, and semiconductor device provided with the delay locked loop

Номер патента: JP3488152B2. Автор: 三佐男鈴木. Владелец: NEC Electronics Corp. Дата публикации: 2004-01-19.

METHOD OF MANUFACTURING COMPONENT-EMBEDDED SUBSTRATE AND COMPONENT-EMBEDDED SUBSTRATE MANUFACTURED BY THE SAME

Номер патента: US20140216801A1. Автор: Toda Mitsuaki,Imamura Yoshio,MATSUMOTO Tohru. Владелец: Meiko Electronics Co., Ltd.. Дата публикации: 2014-08-07.

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Номер патента: EP2780409A1. Автор: Subramanian Vaidyanathan,Nikolai Kaihovirta,Tero Mustonen,Jean-Luc Budry. Владелец: BASF SE. Дата публикации: 2014-09-24.

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Номер патента: US20170034905A1. Автор: Kuromitsu Yoshirou,Terasaki Nobuyuki,Nagatomo Yoshiyuki,Nishikawa Kimihito. Владелец: . Дата публикации: 2017-02-02.

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Номер патента: US20140202740A1. Автор: SUGIMOTO Atsuhiko,ITO Tatsuya,MAEDA Shinnosuke,Hirano Satoshi,SUZUKI Tetsuo,HANDO Takuya. Владелец: NGK SPARK PLUG CO., LTD.. Дата публикации: 2014-07-24.

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Номер патента: US20150208496A1. Автор: Kuromitsu Yoshirou,Terasaki Nobuyuki,Nagatomo Yoshiyuki,Nishikawa Kimihito. Владелец: . Дата публикации: 2015-07-23.

Method of improving adhesion between insulating substrates and metal deposits electrolessly plated thereon, and method of making additive printed circuit boards

Номер патента: US4216246A. Автор: Hiroshi Takahashi,Akishi Nakaso,Toshiro Okamura,Yorio Iwasaki,Nobuo Uozu. Владелец: Hitachi Chemical Co Ltd. Дата публикации: 1980-08-05.

Manufacturing method of pixel defining layer, display substrate and manufacturing method thereof, and display device

Номер патента: CN108428719B. Автор: 胡月,廖金龙,王欣欣,宋丽芳. Владелец: Hefei Xinsheng Optoelectronics Technology Co Ltd. Дата публикации: 2020-12-22.

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Номер патента: JPS54132973A. Автор: Ruutaa Eritsuhi,Merutsuaa Maruchin. Владелец: Luther and Maelzer GmbH. Дата публикации: 1979-10-16.

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Номер патента: US20170150614A1. Автор: Yoneyama Takahiro,Yamatsuka Fumiyuki,Sakai Masayuki. Владелец: . Дата публикации: 2017-05-25.

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Номер патента: US20210223653A1. Автор: Hu Bo,PARK Sang Jin,WANG Wenchao,Wang Baoqiang. Владелец: . Дата публикации: 2021-07-22.

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Номер патента: US20140319200A1. Автор: Yoneyama Takahiro,Yamatsuka Fumiyuki,Sakai Masayuki. Владелец: CANON KABUSHIKI KAISHA. Дата публикации: 2014-10-30.

Manufacturing method of electronic component built-in substrate and electronic component built-in substrate

Номер патента: JP5886335B2. Автор: キム・ホン・ウォン,イ・ソク・キュ,イ・テ・ゴン,カン・ビュン・ハク,ビュン・ジョン・ス,ユ・ヨン・ソプ,ユン・サン・ミ. Владелец: Samsung Electro Mechanics Co Ltd. Дата публикации: 2016-03-16.

Method of mounting electronic part, circuit substrate, and image forming apparatus

Номер патента: US9599944B2. Автор: Masayuki Sakai,Takahiro Yoneyama,Fumiyuki Yamatsuka. Владелец: Canon Inc. Дата публикации: 2017-03-21.

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Номер патента: RU2288167C2. Автор: Катрин ЖАКИО,Жан-Марк БЕРКЬЕ,Софи БЕССОН,Жан-Пьер БУАЛО,Кристиан РИКОЛЛО,Тьерри ГАКУАН. Владелец: СЭН-ГОБЭН ГЛАСС ФРАНС. Дата публикации: 2006-11-27.

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Номер патента: US09555561B2. Автор: HAYK Khachatryan,Taewoong Kim,Sunho Kim,Hyunwoo KOO. Владелец: Samsung Display Co Ltd. Дата публикации: 2017-01-31.

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Номер патента: US12111555B2. Автор: Katsunori Misaki. Владелец: Sharp Display Technology Corp. Дата публикации: 2024-10-08.

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Номер патента: US09645421B2. Автор: Taewoong Kim,Sunho Kim,Danbi Choi,Hyunwoo KOO. Владелец: Samsung Display Co Ltd. Дата публикации: 2017-05-09.

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Номер патента: US09685131B2. Автор: Hidefumi Yoshida,Kohhei Tanaka. Владелец: Sharp Corp. Дата публикации: 2017-06-20.

Method of measuring thermal resistance of transition-case of power semiconductor devices

Номер патента: RU2724148C1. Автор: Владимир Яковлевич Хорольский,Андрей Борисович Ершов,Султан Шарифидинович Байрамалиев. Владелец: федеральное государственное бюджетное образовательное учреждение высшего образования "Ставропольский государственный аграрный университет". Дата публикации: 2020-06-22.

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Номер патента: WO2008027390A3. Автор: Steven Hart,James Pfau. Владелец: James Pfau. Дата публикации: 2008-04-17.

Method of sealing a porous fibrous substrate, and door skins, produced by the method

Номер патента: US10035282B2. Автор: James Pfau,Stephen Hart. Владелец: Masonite Corp. Дата публикации: 2018-07-31.

Method of polishing back surface of substrate and substrate processing apparatus

Номер патента: US09808903B2. Автор: Kenya Ito,Tetsuji Togawa,Masayuki Nakanishi,Yu Ishii. Владелец: Ebara Corp. Дата публикации: 2017-11-07.

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Номер патента: RU2292245C2. Автор: Кеннет В. ДИК,Гари ОТАКЕ,Аарон ЙЕССЕН. Владелец: Лайфскен, Инк.. Дата публикации: 2007-01-27.

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Номер патента: US20170059752A1. Автор: Hyesog Lee,Hoikwan LEE,Jaejoong Kwon,Yunseon DO,Chio Cho. Владелец: Samsung Display Co Ltd. Дата публикации: 2017-03-02.

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Номер патента: US20230367166A1. Автор: Katsunori Misaki. Владелец: Sharp Display Technology Corp. Дата публикации: 2023-11-16.

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Номер патента: US20120119215A1. Автор: Su-Jeong Kim,Seung-Beom Park,Jae-Jin Lyu,Yoon-Sung Um,Hye-ran YOU. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2012-05-17.

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Номер патента: US20130314652A1. Автор: Chul Huh,Yi-Seop Shim,Chang-Soon Jang,Soo-Hye Ryu. Владелец: Samsung Display Co Ltd. Дата публикации: 2013-11-28.

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Номер патента: US6615613B1. Автор: Masahiro Katagiri,Shozo Iwabuchi. Владелец: Hoya Corp. Дата публикации: 2003-09-09.

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Номер патента: RU2686859C1. Автор: Павел Владимирович Сорокин,Алексей Иванович Солдатов,Андрей Алексеевич Солдатов,Мария Алексеевна Костина,Юлия Викторовна Шульгина,Иван Михайлович Васильев. Владелец: Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский Томский политехнический университет". Дата публикации: 2019-05-06.

Method of testing for power and ground continuity of a semiconductor device

Номер патента: US20070200586A1. Автор: Vivien Wong,Wai Phoon,Wah Tan. Владелец: Individual. Дата публикации: 2007-08-30.

Method of testing for power and ground continuity of a semiconductor device

Номер патента: MY139152A. Автор: Vivien Wong,Wai Khuin Phoon,Wah Yew Tan. Владелец: FREESCALE SEMICONDUCTOR INC. Дата публикации: 2009-08-28.

Methods of assessing characteristics of fibrous substrates and treating fibrous substrates

Номер патента: US7261000B2. Автор: Faiz Feisal Sherman,Vladimir Gartstein,Helen Rochelle Kemp,Thomas A. Sturgis. Владелец: Procter and Gamble Co. Дата публикации: 2007-08-28.

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Номер патента: US20020118255A1. Автор: Ryoji Kanri. Владелец: Individual. Дата публикации: 2002-08-29.

Simulation circuit pattern evaluation method, manufacturing method of semiconductor integrated circuit, test substrate, and test substrate group

Номер патента: US20050075854A1. Автор: Hisashi Kaneko,Hiroyuki Toshima,Motoya Okazaki. Владелец: Individual. Дата публикации: 2005-04-07.

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Номер патента: CA2485050C. Автор: David H. Mead,David M. Rogers. Владелец: PPG Industries Ohio Inc. Дата публикации: 2011-10-11.

Methods of Manufacturing Memory Units, and Methods of Manufacturing Semiconductor Devices

Номер патента: US20090162998A1. Автор: Man-Hyoung Ryoo,Takahiro YASUE,Byeong Ok Cho,Moon-Sook Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2009-06-25.

Semiconductor device and method of manufacturing the same and semiconductor manufacturing device

Номер патента: US20080316790A1. Автор: Fumihiko Inoue,Kentaro Sera. Владелец: SPANSION LLC. Дата публикации: 2008-12-25.

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Номер патента: US09894775B2. Автор: Shin Akasaka,Kentarou Satou,Yuki Oishi,Satoshi Kumon. Владелец: Sony Corp. Дата публикации: 2018-02-13.

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Номер патента: US20010046552A1. Автор: Takashi Yoshino,Makoto Iwai,Makoto Ohmori. Владелец: NGK Insulators Ltd. Дата публикации: 2001-11-29.

Touch substrate and method of manufacturing the same, and display device

Номер патента: US09965089B2. Автор: Lei Zhang,Ming Hu,Taofeng Xie,Yubo Xu. Владелец: Hefei Xinsheng Optoelectronics Technology Co Ltd. Дата публикации: 2018-05-08.

Array substrate and method of manufacturing the same, and display device

Номер патента: US09869902B2. Автор: Jun Mo,Yujia Wang,Tingze Dong,Zhinan Zhang,Peiqiang GUAN. Владелец: Beijing BOE Optoelectronics Technology Co Ltd. Дата публикации: 2018-01-16.

Display substrate, method of manufacturing the same and display device

Номер патента: US10642107B2. Автор: Qian Zhang,Duo Zhang,Tingwei Chen,Weihong Jiao,Yangqing Wang. Владелец: Fuzhou BOE Optoelectronics Technology Co Ltd. Дата публикации: 2020-05-05.

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Номер патента: US20190001663A1. Автор: Hideo Tamura,Takaaki Yamaguchi,Yohei Osuki. Владелец: Canon Inc. Дата публикации: 2019-01-03.

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Номер патента: US12124088B2. Автор: Chan-Hong Chern,Chewn-Pu Jou,Lan-Chou Cho,Min-Hsiang Hsu,Yung-jr Hung,Cheng-Tse Tang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-22.

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Номер патента: TW574702B. Автор: Toshihiro Tanaka,Yutaka Shinagawa,Kazufumi Suzukawa,Takashi Yamaki,Masamichi Fujito. Владелец: Hitachi Ulsi Sys Co Ltd. Дата публикации: 2004-02-01.

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Номер патента: US9081197B2. Автор: Jin-Hwan Kim,Sang-Woo Whangbo,Seung-Jun Jeong. Владелец: Samsung Display Co Ltd. Дата публикации: 2015-07-14.

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Номер патента: US12116303B2. Автор: Thomas Mikio Wynne. Владелец: Corning Inc. Дата публикации: 2024-10-15.

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Номер патента: US20100035040A1. Автор: Masahiro Masuzawa,Masaru Ohgaki. Владелец: Ricoh Co Ltd. Дата публикации: 2010-02-11.

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Номер патента: US09741276B2. Автор: Akimasa Maruo,Daisuke Nishinohara. Владелец: ROHM CO LTD. Дата публикации: 2017-08-22.

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Номер патента: US20240367141A1. Автор: Christopher Belisle,Danni WANG,Brian Panganiban,Shawn Darnall. Владелец: Bio Rad Laboratories Inc. Дата публикации: 2024-11-07.

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Номер патента: EP4453660A1. Автор: Teunis Willem Tukker,Ferry Zijp,Ahmet Burak CUNBUL,Peter Fernand William Jozef DENDAS,Abraham Franciscus Hubertus VAN GESSEL. Владелец: ASML Netherlands BV. Дата публикации: 2024-10-30.

Method of making lithographic printing plate substrate and imageable elements

Номер патента: EP2152933A1. Автор: Yasushi Miyamoto. Владелец: Eastman Kodak Co. Дата публикации: 2010-02-17.

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Номер патента: US4405229A. Автор: Herbert E. Mayer. Владелец: Censor Patent und Versuchsanstalt. Дата публикации: 1983-09-20.

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Номер патента: US09665003B2. Автор: Hyun-Ji SONG,Young-Min Kim,Yun-Jun KIM,Hea-Jung KIM,Yong-Woon YOON,Chung-Heon Lee,Seung-Hee Hong,Yoo-Jeong Choi,Joon-Young Moon,Seung-Wook Shin,Go-Un Kim,Yo-Choul PARK,Yu-Shin Park,You-Jung PARK. Владелец: Cheil Industries Inc. Дата публикации: 2017-05-30.

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Номер патента: TWI336654B. Автор: Masahiro Masuzawa,Masaru Ohgaki. Владелец: Ricoh Co Ltd. Дата публикации: 2011-02-01.

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Номер патента: TW200848236A. Автор: Masahiro Masuzawa,Masaru Ohgaki. Владелец: Ricoh Co Ltd. Дата публикации: 2008-12-16.

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Номер патента: WO2024046776A1. Автор: Jens Ulrich Thomas,Antti Määttänen,Oliver Sohr,Sebastian Leugner. Владелец: Schott Primoceler Oy. Дата публикации: 2024-03-07.

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Номер патента: US20210365151A1. Автор: Lei Zhang,Zouming Xu,Guiyu ZHANG. Владелец: Hefei Xinsheng Optoelectronics Technology Co Ltd. Дата публикации: 2021-11-25.

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Номер патента: EP4332642A1. Автор: Antti Määttänen,Sebastian Leugner,Dr. Oliver SOHR,Dr. Jens Ulrich THOMAS. Владелец: SCHOTT AG. Дата публикации: 2024-03-06.

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Номер патента: US10632741B2. Автор: Hideo Tamura,Takaaki Yamaguchi,Yohei Osuki. Владелец: Canon Inc. Дата публикации: 2020-04-28.

Simulation circuit pattern evaluation method, manufacturing method of semiconductor integrated circuit, test substrate, and test substrate group

Номер патента: TW200514125A. Автор: Hisafumi Kaneko,Hiroyuki Toshima,Motoya Okazaki. Владелец: Toshiba Corp. Дата публикации: 2005-04-16.

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Номер патента: TWI256666B. Автор: Hisashi Kaneko,Hiroyuki Toshima,Motoya Okazaki. Владелец: Toshiba Corp. Дата публикации: 2006-06-11.

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Номер патента: TW200528872A. Автор: Eugene George Olczak. Владелец: Gen Electric. Дата публикации: 2005-09-01.

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Номер патента: US20190001663A1. Автор: Tamura Hideo,YAMAGUCHI Takaaki,Osuki Yohei. Владелец: . Дата публикации: 2019-01-03.

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Номер патента: US20170059752A1. Автор: Lee Hoikwan,CHO Chio,KWON Jaejoong,Do Yunseon,Lee Hyesog. Владелец: . Дата публикации: 2017-03-02.

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Номер патента: US20150076720A1. Автор: Kim Sunho,KIM Taewoong,Koo Hyunwoo,Khachatryan Hayk. Владелец: Samsung Display Co., Ltd.. Дата публикации: 2015-03-19.

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Номер патента: US20040096595A1. Автор: Tatsuya Ito,Satoru Katagami,Yoshihiro Otagiri. Владелец: Seiko Epson Corp. Дата публикации: 2004-05-20.

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Номер патента: US7336327B2. Автор: Tatsuya Ito,Satoru Katagami,Yoshihiro Otagiri. Владелец: Seiko Epson Corp. Дата публикации: 2008-02-26.

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Номер патента: TW200404183A. Автор: Tatsuya Ito,Satoru Katagami,Yoshihiro Otagiri. Владелец: Seiko Epson Corp. Дата публикации: 2004-03-16.

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Номер патента: CN104465334A. Автор: 金泰雄,具贤祐,金善浩,哈伊克·哈洽图安. Владелец: Samsung Display Co Ltd. Дата публикации: 2015-03-25.

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Номер патента: US20220147688A1. Автор: PENG SHIH-WEI,LIN WEI-CHENG,TZENG JIANN-TYNG,YANG Jay. Владелец: . Дата публикации: 2022-05-12.

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Номер патента: JP2004528664A. Автор: フィッシャー，ヘルムート,シチイピンスキ，カジミェシュ. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2004-09-16.

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Номер патента: US20230400639A1. Автор: Chan-Hong Chern,Chewn-Pu Jou,Lan-Chou Cho,Min-Hsiang Hsu,Yung-jr Hung,Cheng-Tse Tang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-12-14.

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Номер патента: US11796739B2. Автор: Chan-Hong Chern,Chewn-Pu Jou,Lan-Chou Cho,Min-Hsiang Hsu,Yung-jr Hung,Cheng-Tse Tang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-10-24.

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Номер патента: MY149186A. Автор: Koji Takahashi,Tsuyoshi Watanabe,Masao Takano. Владелец: Hoya Corp. Дата публикации: 2013-07-31.

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Номер патента: US20090303405A1. Автор: Gwang-Bum Ko,Dong-Gyu Kim,Yoon-jang KIM,Sung-Jae Moon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2009-12-10.

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Номер патента: US20150192819A1. Автор: Kim Sunho,CHOI Danbi,KIM Taewoong,Koo Hyunwoo. Владелец: . Дата публикации: 2015-07-09.

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Номер патента: US20170219868A1. Автор: Kim Sunho,CHOI Danbi,KIM Taewoong,Koo Hyunwoo. Владелец: . Дата публикации: 2017-08-03.

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Номер патента: JP3978062B2. Автор: 茂雄茶谷,正則松浦. Владелец: Panasonic Corp. Дата публикации: 2007-09-19.

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Номер патента: US20100189916A1. Автор: Miyoshi Watanabe. Владелец: Individual. Дата публикации: 2010-07-29.

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Номер патента: KR960015575A. Автор: 요시유끼 이시다. Владелец: 후지쓰 가부시끼가이샤. Дата публикации: 1996-05-22.

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Номер патента: US20030205060A1. Автор: Masahiro Katagiri,Shozo Iwabuchi. Владелец: Hoya Corp. Дата публикации: 2003-11-06.

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Номер патента: JP5066577B2. Автор: 玲宏相場,祐史高橋. Владелец: JX Nippon Mining and Metals Corp. Дата публикации: 2012-11-07.

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Номер патента: US20190062938A1. Автор: SATO Yuji,Fujita Jun,YOSHIDA Motoru,ENDO Kazuyo. Владелец: Mitsubishi Electric Corporation. Дата публикации: 2019-02-28.

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Номер патента: US20160071569A1. Автор: Kimura Hiromitsu. Владелец: . Дата публикации: 2016-03-10.

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Номер патента: US20190324207A1. Автор: Takahashi Kazuki,Choraku Kohei,Yamada Tetsuro,Hiroshima Yoshiyuki,Matsui Akiko. Владелец: FUJITSU LIMITED. Дата публикации: 2019-10-24.

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Номер патента: KR101564922B1. Автор: 주진호,임상욱,황보상우,신봉규,석준형. Владелец: 삼성디스플레이 주식회사. Дата публикации: 2015-11-03.

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Номер патента: US9601177B2. Автор: Hiromitsu Kimura. Владелец: ROHM CO LTD. Дата публикации: 2017-03-21.

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Номер патента: US20150379910A1. Автор: Akimasa Maruo,Daisuke Nishinohara. Владелец: ROHM CO LTD. Дата публикации: 2015-12-31.

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Номер патента: CN107807152A. Автор: 杜海英,孙炎辉,王述刚. Владелец: DALIAN NATIONALITIES UNIVERSITY. Дата публикации: 2018-03-16.

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Номер патента: US20150379910A1. Автор: MARUO Akimasa,Nishinohara Daisuke. Владелец: . Дата публикации: 2015-12-31.

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Номер патента: KR0138883B1. Автор: 다까시 구사까리. Владелец: 니뽄 덴끼 가부시끼 가이샤. Дата публикации: 1998-06-01.

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Номер патента: US20130314652A1. Автор: HUH Chul,Ryu Soo-Hye,Shim Yi-Seop,Jang Chang-Soon. Владелец: Samsung Display Co., Ltd.. Дата публикации: 2013-11-28.

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Номер патента: US20150004531A1. Автор: PARK Yo-Choul,KIM Young-Min,Choi Yoo-Jeong,HONG Seung-Hee,SONG Hyun-Ji,KIM Yun-Jun,KIM Go-Un,KIM Hea-Jung,MOON Joon-Young,PARK Yu-Shin,PARK You-Jung,SHIN Seung-Wook,YOON Yong-Woon,LEE Chung-Heon. Владелец: . Дата публикации: 2015-01-01.

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Номер патента: US20160019856A1. Автор: Hidefumi Yoshida,Kohhei Tanaka. Владелец: Sharp Corp. Дата публикации: 2016-01-21.

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Номер патента: US20170115786A1. Автор: Fukuyoshi Kenzo,KIMURA Yukihiro. Владелец: TOPPAN PRINTING CO., LTD.. Дата публикации: 2017-04-27.

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Номер патента: US20190168490A1. Автор: HARDWICK Geoffrey B.,LUETGERT Karine A.,LIANG Bei-Hong,Coghlan Henry,WALSH John Peter. Владелец: . Дата публикации: 2019-06-06.

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Номер патента: US20190241468A1. Автор: Lee Hoikwan,KIM Seung,Park Jeongwoo,Park Junehyoung,PARK WONSANG,KIM Seungho. Владелец: . Дата публикации: 2019-08-08.

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Номер патента: US20200254732A1. Автор: HARDWICK Geoffrey B.,LUETGERT Karine A.,LIANG Bei-Hong,Coghlan Henry,WALSH John Peter. Владелец: . Дата публикации: 2020-08-13.

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Номер патента: CA2373564A1. Автор: Masayuki Kato,Tsuyoshi Aoki,Akio Sugama,Shinya Sasaki,Masatoshi Ishii. Владелец: Masatoshi Ishii. Дата публикации: 2002-08-28.

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Номер патента: JPH1022368A. Автор: Hitoshi Obara,斉小原. Владелец: Fujitsu Ltd. Дата публикации: 1998-01-23.

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Номер патента: US20050041906A1. Автор: Masayuki Kato,Tsuyoshi Aoki,Akio Sugama,Shinya Sasaki,Masatoshi Ishii. Владелец: Masatoshi Ishii. Дата публикации: 2005-02-24.

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Номер патента: JP4057127B2. Автор: 徳郎小澤. Владелец: Seiko Epson Corp. Дата публикации: 2008-03-05.

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Номер патента: EP1237019A2. Автор: Akio Fujitsu Limited Sugama,Masayuki Fujitsu Limited Kato,Masatoshi Fujitsu Limited Ishii,Shinya Fujitsu Laboratories of America Sasaki,Tsuyoshi Fujitsu Limited Aoki. Владелец: Fujitsu Ltd. Дата публикации: 2002-09-04.

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Номер патента: TW200415025A. Автор: Henry Coghlan,John Peter Walsh,Bei Hong Liang,Karine Luetgert,Geoffrey B Hardwick. Владелец: Masonite Corp. Дата публикации: 2004-08-16.

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Номер патента: WO2004043662A2. Автор: Henry Coghlan,John Peter Walsh,Geoffrey B. Hardwick,Bei-Hong Liang,Karine A. Luetgert. Владелец: Masonite Corporation. Дата публикации: 2004-05-27.

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Номер патента: US20140351781A1. Автор: Michael Priel,Anton Rozen,Asher BERKOVITZ. Владелец: FREESCALE SEMICONDUCTOR INC. Дата публикации: 2014-11-27.

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Номер патента: US20190057175A1. Автор: James Joseph Victory,Mehrdad Baghaie Yazdi. Владелец: Semiconductor Components Industries LLC. Дата публикации: 2019-02-21.

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Номер патента: US8669024B2. Автор: Taeyoung Oh,Chulho Kim,Jonggo Lim,Samyeoul Kim. Владелец: LG Display Co Ltd. Дата публикации: 2014-03-11.

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Номер патента: US20080226993A1. Автор: Taeyoung Oh,Chulho Kim,Jonggo Lim,Samyeoul Kim. Владелец: LG Display Co Ltd. Дата публикации: 2008-09-18.

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Номер патента: US5653845A. Автор: Yasushi Kawata. Владелец: Toshiba Corp. Дата публикации: 1997-08-05.

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Номер патента: US9803284B2. Автор: Ranjith Divigalpitiya. Владелец: 3M Innovative Properties Co. Дата публикации: 2017-10-31.

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Номер патента: KR101370034B1. Автор: 이수용,정희진. Владелец: 주식회사 나래나노텍. Дата публикации: 2014-03-06.

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Номер патента: US20150192533A1. Автор: Venkataraman Karthik,Bajaj Mohit,Furkay Stephen S.. Владелец: INTERNATIONAL BUSINESS MACHINES CORPORATION. Дата публикации: 2015-07-09.

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Номер патента: KR101334410B1. Автор: 이종태,김규정. Владелец: 주식회사 나래나노텍. Дата публикации: 2013-11-29.

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Номер патента: TW200739099A. Автор: Vivien Wong,Waikhuin Phoon,Wahyew Tan. Владелец: FREESCALE SEMICONDUCTOR INC. Дата публикации: 2007-10-16.

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Номер патента: KR101334411B1. Автор: 김정교,손희진. Владелец: 주식회사 나래나노텍. Дата публикации: 2013-11-29.

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Номер патента: US20130280426A1. Автор: Song Zhe,Carlson Chris M.. Владелец: . Дата публикации: 2013-10-24.

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Номер патента: US20210003883A1. Автор: LIU XUE. Владелец: . Дата публикации: 2021-01-07.

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Номер патента: KR101689770B1. Автор: 이상희,최진,이래원. Владелец: 삼성전자주식회사. Дата публикации: 2016-12-26.

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Номер патента: FR2913687A1. Автор: Elena Sebe,Dwayne Back,Charles H Winter. Владелец: Sulfo Technologies LLC. Дата публикации: 2008-09-19.

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Номер патента: RU2673849C2. Автор: Мартин ДРОЛЛЬ,Оливер ЗЕЕВАЛЬД,Ларс ШАХТЗИК,Мануэль ТРАУТ,Михаэль ШВАМБ,Вера ЗОТКЕ,Алиаксандр ФРЕНКЕЛЬ,Рон АЙЛИНГХОФФ,Штефани ГЕРОЛЬД,Даниэль ВАССЕРФАЛЛЕН,Вольфганг БРЕМЗЕР,Евгения НИЗЕН. Владелец: Шеметалл Гмбх. Дата публикации: 2018-11-30.

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Номер патента: US20100252950A1. Автор: Shigeru Nakayama,Masashi Yoshimura,Akihito Fujii. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2010-10-07.

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Номер патента: DE2832343A1. Автор: Gregory Michael Sheyon. Владелец: Stauffer Chemical Co. Дата публикации: 1979-02-08.

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Номер патента: US20130217282A1. Автор: PFAU James,HART Steven. Владелец: Masonite Corporation. Дата публикации: 2013-08-22.

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Номер патента: US20160061713A1. Автор: SENOO Tomonobu,NONOMURA Yoshimune. Владелец: Asahi Glass Company, Limited. Дата публикации: 2016-03-03.

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Номер патента: US20140220866A1. Автор: NAKANISHI Masayuki,TOGAWA Tetsuji,ITO Kenya,ISHII Yu. Владелец: . Дата публикации: 2014-08-07.

METHOD OF SEALING A POROUS FIBROUS SUBSTRATE, AND DOOR SKINS, PRODUCED BY THE METHOD

Номер патента: US20180333891A1. Автор: Hart Stephen,PFAU James. Владелец: . Дата публикации: 2018-11-22.

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Номер патента: KR102008301B1. Автор: 김규남. Владелец: 엘지디스플레이 주식회사. Дата публикации: 2019-08-07.

Method of polishing back surface of substrate and substrate processing apparatus

Номер патента: EP2762274A2. Автор: Kenya Ito,Tetsuji Togawa,Masayuki Nakanishi,Yu Ishii. Владелец: Ebara Corp. Дата публикации: 2014-08-06.

Method of polishing back surface of substrate and substrate processing apparatus

Номер патента: EP2762274A3. Автор: Kenya Ito,Tetsuji Togawa,Masayuki Nakanishi,Yu Ishii. Владелец: Ebara Corp. Дата публикации: 2015-06-03.

Method of polishing back surface of substrate and substrate processing apparatus

Номер патента: KR102142893B1. Автор: 데츠지 도가와,겐야 이토,유 이시이,마사유키 나카니시. Владелец: 가부시키가이샤 에바라 세이사꾸쇼. Дата публикации: 2020-08-10.

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Номер патента: KR101811508B1. Автор: 신고 후지모또,?스께 스즈끼,스께 스즈끼. Владелец: 아반스트레이트 가부시키가이샤. Дата публикации: 2017-12-21.

Preparation method of surface-enhanced Raman spectrum substrate and surface-enhanced Raman detection method

Номер патента: CN112098391A. Автор: 王海燕,刘珊,王琳娜,徐朝鹏,杜大学,王风彦. Владелец: YANSHAN UNIVERSITY. Дата публикации: 2020-12-18.

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Номер патента: TWI562395B. Автор: WEI Liu,Soo Jin Chua,Chew Beng Soh,Jian Wei Jayce Cheng. Владелец: Agency Science Tech & Res. Дата публикации: 2016-12-11.

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Номер патента: WO2023117393A1. Автор: Teunis Willem Tukker,Ferry Zijp,Ahmet Burak CUNBUL,Peter Fernand William Jozef DENDAS,Abraham Franciscus Hubertus VAN GESSEL. Владелец: ASML Netherlands B.V.. Дата публикации: 2023-06-29.

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Номер патента: TW202223011A. Автор: 亞克海基寧,米可波塔寧,茱哈雅斯凱萊寧,増田則之. Владелец: 芬蘭商英克倫股份有限公司. Дата публикации: 2022-06-16.

Method of making polymer monolith composite substrate and resulting substrate as well as beads and bead array

Номер патента: EP1786552A1. Автор: Aldrich N. K. Lau. Владелец: Applera Corp. Дата публикации: 2007-05-23.

METHODS OF FABRICATING OPTICAL ELEMENTS ON SUBSTRATES AND RELATED DEVICES

Номер патента: US20130130156A1. Автор: Escuti Michael James. Владелец: . Дата публикации: 2013-05-23.

Method of Depositing Titania on a Substrate and Composite Article

Номер патента: US20160076151A1. Автор: Divigalpitiya Ranjith. Владелец: . Дата публикации: 2016-03-17.

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Номер патента: US20160108516A1. Автор: Dutta Bhaskar. Владелец: . Дата публикации: 2016-04-21.

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Номер патента: US20210191567A1. Автор: Song Jie,SHAO Xianjie,GU Honggang,CHEN Junsheng. Владелец: . Дата публикации: 2021-06-24.

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Номер патента: US20200164401A1. Автор: Stensvad Karl K.,Divigalpitiya Ranjith,Nayar Satinder K.,Dobbs James N.,Vandre Eric A.,Carlson Daniel H.,Marra Gerrard A. S.,Batra Saurabh,Schelhaas Verlin W.,Shelton Chrispian E.,Javid Samad. Владелец: . Дата публикации: 2020-05-28.

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Номер патента: KR101661695B1. Автор: 정양호,이희국,김병욱,신재호,김동민,이원영,전우석. Владелец: 주식회사 동진쎄미켐. Дата публикации: 2016-10-11.

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Номер патента: FR2658757A1. Автор: François,Bouillet Jean-Noel. Владелец: BOUILLET JEAN NOEL. Дата публикации: 1991-08-30.

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Номер патента: CA2485050A1. Автор: David H. Mead,David M. Rogers. Владелец: BASF Corp. Дата публикации: 2005-05-25.

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Номер патента: EP3669256A4. Автор: Jie Song,Junsheng CHEN,Honggang Gu,Xianjie SHAO. Владелец: Hefei BOE Optoelectronics Technology Co Ltd. Дата публикации: 2021-03-17.

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Номер патента: CN102473421A. Автор: 崔星一. Владелец: Hoya Corp. Дата публикации: 2012-05-23.

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Номер патента: TWI499788B. Автор: Pei Lin Huang,Chuan Feng Liu,Jen Shiun Huang,shi lin Li,Chen Fa Tsai,Yung Sheng Chang. Владелец: E Ink Holdings Inc. Дата публикации: 2015-09-11.

The forming method of two S type honeycomb substrate and shaped device thereof

Номер патента: CN104826903B. Автор: 季金菊. Владелец: Individual. Дата публикации: 2016-03-23.

Method of applying thin layers to substrates and apparatus for making them

Номер патента: DK3095890T3. Автор: Ayrat Khamitovich Khisamov. Владелец: The Batteries Spolka Z Ograniczona Odpowiedzialnoscia. Дата публикации: 2019-01-02.

"paper coating composition, coated paper substrate, method of making a coated paper substrate and process for preparing a paper coating composition".

Номер патента: BRPI0907673A2. Автор: G Gore Christopher,C Barron Milagros. Владелец: Akzo Nobel NV. Дата публикации: 2019-09-24.

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Номер патента: US20100308327A1. Автор: Masashi Kawasaki,Ken Nakahara,Atsushi Tsukazaki,Shunsuke Akasaka,Akira Ohtomo. Владелец: ROHM CO LTD. Дата публикации: 2010-12-09.

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Номер патента: RU2675842C2. Автор: Пол Ричард ФИЛЛИПС,Эндрю Фрэнсис ЧИФФИ,Франсуа МОРО,Давид БЕРЖЕАЛЬ,Питер Джонстон. Владелец: Джонсон Мэтти Паблик Лимитед Компани. Дата публикации: 2018-12-25.

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Номер патента: WO2014182129A1. Автор: Jong Lam Lee,Sung Joo Kim,Buem Joon Kim. Владелец: Seoul Viosys Co., Ltd.. Дата публикации: 2014-11-13.

Paper or paperboard substrate, method of manufacturing substrate, and package formed from substrate

Номер патента: RU2543206C2. Автор: Исто ХЕЙСКАНЕН,Кай БАКФОЛЬК,Ларс АКСРУП. Владелец: СТОРА ЭНСО ОЙЙ. Дата публикации: 2015-02-27.

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Номер патента: US11305539B2. Автор: Taichi YONEMOTO. Владелец: Canon Inc. Дата публикации: 2022-04-19.

Method of manufacturing a fibrous substrate incorporating an electronic chip

Номер патента: WO2004048691A2. Автор: James Peter Snelling,Paul Howland,Peter Mclean Henderson. Владелец: DE LA RUE INTERNATIONAL LIMITED. Дата публикации: 2004-06-10.

Method of manufacturing semiconductor device and semiconductor device

Номер патента: US20200180948A1. Автор: Yasuo Yamaguchi. Владелец: Mitsubishi Electric Corp. Дата публикации: 2020-06-11.

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Номер патента: US20120001191A1. Автор: . Владелец: Samsung Mobile Display Co., Ltd.. Дата публикации: 2012-01-05.

Method of preparation of components for making optical and semiconductor materials

Номер патента: RU2152349C1. Автор: А.В. Тихомиров. Владелец: Российский научный центр "Курчатовский институт". Дата публикации: 2000-07-10.

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Номер патента: US20120001183A1. Автор: . Владелец: SONY CORPORATION. Дата публикации: 2012-01-05.

Method of testing for power and ground continuity of a semiconductor device

Номер патента: SG135133A1. Автор: Vivien Wong,Wai Khuin Phoon,Wah Yew Tan. Владелец: FREESCALE SEMICONDUCTOR INC. Дата публикации: 2007-09-28.

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Номер патента: US20120001272A1. Автор: . Владелец: . Дата публикации: 2012-01-05.

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Номер патента: US20120001226A1. Автор: . Владелец: Sanken Electric Co., Ltd.. Дата публикации: 2012-01-05.

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Номер патента: US20120003812A1. Автор: Sasaki Makoto,NISHIGUCHI Taro,HARADA Shin,Okita Kyoko,Namikawa Yasuo. Владелец: Sumitomo Electric Industries, Ltd.. Дата публикации: 2012-01-05.

Methods of Forming Nonvolatile Memory Devices Using Nonselective and Selective Etching Techniques to Define Vertically Stacked Word Lines

Номер патента: US20120003831A1. Автор: . Владелец: . Дата публикации: 2012-01-05.

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Номер патента: RU2522182C1. Автор: Гасан Абакарович Мустафаев,Арслан Гасанович Мустафаев,Абдулла Гасанович Мустафаев. Владелец: Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования Кабардино-Балкарский государственный университет им. Х.М. Бербекова. Дата публикации: 2014-07-10.

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Номер патента: TW200629415A. Автор: Michael Chan,Yu-Ren Wang,Ying-Wei Yen. Владелец: United Microelectronics Corp. Дата публикации: 2006-08-16.

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Номер патента: US20120114000A1. Автор: TANIGUCHI Hidehiro. Владелец: FURUKAWA ELECTRIC CO., LTD.. Дата публикации: 2012-05-10.

Method of manufacturing p-type nitride semiconductor and semiconductor device fabricated by the method

Номер патента: US20120049328A1. Автор: . Владелец: . Дата публикации: 2012-03-01.

Method of inspecting defects, and method of manufacturing mask blank, transfer mask and semiconductor device

Номер патента: SG10201910709PA. Автор: Uchida Naoki,Tanabe Masaru. Владелец: Hoya Electronics Singapore Pte Ltd. Дата публикации: 2020-06-29.

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Номер патента: TW406445B. Автор: Shuji Nakamura,Hiroyuki Kiyohisa,Naruhito Iwasa,Tokuya Kozaki,Kazuyuki Chocho. Владелец: Nichia Kagaku Kogyo Kk. Дата публикации: 2000-09-21.

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Номер патента: US20120025311A1. Автор: . Владелец: ALLIANT TECHSYSTEMS INC.. Дата публикации: 2012-02-02.

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Номер патента: US20120161155A1. Автор: HARADA Shin,HONKE Tsubasa. Владелец: Sumitomo Electric Industries, Ltd.. Дата публикации: 2012-06-28.

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Номер патента: JP2014183108A. Автор: Koji Nakamura,幸治中村. Владелец: Oki Electric Industry Co Ltd. Дата публикации: 2014-09-29.

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Номер патента: US20130017683A1. Автор: HARADA Shin,Okita Kyoko,HONKE Tsubasa. Владелец: Sumitomo Electric Industries, Ltd.. Дата публикации: 2013-01-17.

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Номер патента: US20130154111A1. Автор: BYEON Sang Jin. Владелец: HYNIX SEMICONDUCTOR, INC.. Дата публикации: 2013-06-20.

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Номер патента: US20120063251A1. Автор: LIM Jong Hyoung,Kang Sang Seok,Kwon Hyung Shin. Владелец: . Дата публикации: 2012-03-15.

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Номер патента: TW200729314A. Автор: Tu-Hao Yu,Te-Kan Liao,Yu-Chia Chen,Pai-Hsuan Sun. Владелец: Winbond Electronics Corp. Дата публикации: 2007-08-01.

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Номер патента: TW200718808A. Автор: Chia-Hsun Chen,Jenn-Shing Wang. Владелец: Far East College. Дата публикации: 2007-05-16.

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Номер патента: JPS55143095A. Автор: Toyoiwa Yoshinaga. Владелец: Tohoku Munekata Co Ltd. Дата публикации: 1980-11-08.

Method of manufacturing surface conduction electron-emitting device, and method of manufacturing electron source substrate and image forming apparatus using the same

Номер патента: JP3416376B2. Автор: 雅彦宮本. Владелец: Canon Inc. Дата публикации: 2003-06-16.

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Номер патента: US20130023179A1. Автор: Na Heung-Yeol,Sun Jin-Won. Владелец: . Дата публикации: 2013-01-24.

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Номер патента: US20130056439A1. Автор: Nishi Taiki,Miyakawa Takeshi,Yashima Katsunori,Okoshi Kensuke,Ishikura Hidenori. Владелец: DENKI KAGAKU KOGYO KABUSHIKI KAISHA. Дата публикации: 2013-03-07.

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Номер патента: US20130234169A1. Автор: Choi Tae-Young,Kano Masataka,Song Jun-Ho,Jo Kang-Moon,KIM DOO-NA,JEONG Yeon-Taek,KIM Bo-Sung. Владелец: Samsung Display Co., Ltd.. Дата публикации: 2013-09-12.

Method of manufacturing electron source substrate and method of manufacturing image forming apparatus

Номер патента: JP3472033B2. Автор: 徹菅野. Владелец: Canon Inc. Дата публикации: 2003-12-02.

Surface treatment method of bond pad for a substrate and the substrate structure

Номер патента: TW200917918A. Автор: Wei-Hua Lu. Владелец: Wei-Hua Lu. Дата публикации: 2009-04-16.

Method of electroless deposition on a substrate and catalyst solution therefor

Номер патента: CA659444A. Автор: Charles R. Shipley, Jr.. Владелец: Shipley Co Inc. Дата публикации: 1963-03-12.

METHOD OF ANODIZING ALUMINUM USING A HARD MASK AND SEMICONDUCTOR DEVICE THEREOF

Номер патента: US20120097961A1. Автор: Trujillo Jovan,Moyer Curtis. Владелец: . Дата публикации: 2012-04-26.

DOPED, PASSIVATED GRAPHENE NANOMESH, METHOD OF MAKING THE DOPED, PASSIVATED GRAPHENE NANOMESH, AND SEMICONDUCTOR DEVICE INCLUDING THE DOPED, PASSIVATED GRAPHENE NANOMESH

Номер патента: US20130028823A1. Автор: Maarouf Ahmed,Martyna Glenn J.,Abou-Kandil Ahmed,Newns Dennis M.,Mohamed Hisham. Владелец: . Дата публикации: 2013-01-31.

Method of Making Capacitor With a Sealing Liner and Semiconductor Device Comprising Same

Номер патента: US20130164901A1. Автор: Richter Ralf. Владелец: GLOBALFOUNDRIES INC.. Дата публикации: 2013-06-27.

The manufacture method of semiconductor structure, resistive memory cell structure and semiconductor structure

Номер патента: CN105098067B. Автор: 李明修,林昱佑,李峰旻. Владелец: Macronix International Co Ltd. Дата публикации: 2017-10-17.

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Номер патента: US20120241740A1. Автор: LEE Hi-kuk,Yun Sang-Hyun,Kim Cha-Dong,Park Jung-In,Sim Su-Yeon. Владелец: . Дата публикации: 2012-09-27.

Method of removing surface contaminants on substrate and semiconductor substrate

Номер патента: JPH11154659A. Автор: 志津夫小黒,Shizuo Oguro. Владелец: NEC Corp. Дата публикации: 1999-06-08.

Method of quantitative analysis of impurities on metals and semiconductors

Номер патента: SU1368747A1. Автор: Михаил Иванович Коломейцев,Владимир Иванович Запорожченко,Андрей Петрович Алексеев. Владелец: Всесоюзный Научно-Исследовательский Центр По Изучению Свойств Поверхности И Вакуума. Дата публикации: 1988-01-23.

METHOD OF MECHANICAL PROCESSING BY PRESSURE OF METALS AND SEMICONDUCTORS USING THE ELECTROPLASTIC EFFECT

Номер патента: RU2009133439A. Автор: Владимир Михайлович Кузнецов,Владимир Александрович Петров,Юрий Алексеевич Евсеев,Владимир Иванович Сташенко,Олег Александрович Троицкий,Алексей Маратович Сурма,Владимир Михайлович Кузнецов (RU),Юрий Алексеевич Евсеев (RU),Олег Александрович Троицкий (RU),Владимир Иванович Сташенко (RU),Владимир Александрович Петров (RU),Алексей Маратович Сурма (RU). Владелец: Российская Федерация, от имени которой выступает Министерство промышленности и торговли Российской Федерации (RU). Дата публикации: 2011-03-20.

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Номер патента: US20120153424A1. Автор: Kim Min-Soo,CHEON Hwan-Sung,OH Seung-Bae,Cho Sung-Wook,Song Jee-Yun,Choi Yoo-Jeong. Владелец: . Дата публикации: 2012-06-21.

METHOD OF MANUFACTURING POWER MODULE SUBSTRATE AND POWER MODULE SUBSTRATE

Номер патента: US20120267149A1. Автор: OI Sotaro. Владелец: MITSUBISHI MATERIALS CORPORATION. Дата публикации: 2012-10-25.

METHOD OF MANUFACTURING MULTILAYER WIRING SUBSTRATE, AND MULTILAYER WIRING SUBSTRATE

Номер патента: US20120312590A1. Автор: . Владелец: NGK SPARK PLUG CO., LTD.. Дата публикации: 2012-12-13.

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Номер патента: US20130032827A1. Автор: Lee Dong-Hoon,JUNG Young-Bae,MOON Joong-Soo,Lee Eun-Chul. Владелец: Samsung Mobile Display Co., Ltd.. Дата публикации: 2013-02-07.

Method of Manufacturing TFT Array Substrate and TFT Array Substrate

Номер патента: US20130071962A1. Автор: Qin Shijian. Владелец: . Дата публикации: 2013-03-21.

METHOD OF MANUFACTURING AN ALIGNMENT SUBSTRATE AND LIQUID CRYSTAL DISPLAY PANEL HAVING THE SAME

Номер патента: US20130088678A1. Автор: Kim Jinhwan,JUNG Kyungho,LEE Sin-Doo,PARK SeungChul,NA Jun-Hee. Владелец: . Дата публикации: 2013-04-11.

METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE AND SILICON CARBIDE SUBSTRATE

Номер патента: US20130099252A1. Автор: Sasaki Makoto. Владелец: Sumitomo Electric Industries, Ltd.. Дата публикации: 2013-04-25.

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