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  • Reticle for fabricating a semiconductor device and exposure method using the same

Reticle for fabricating a semiconductor device and exposure method using the same

Номер патента: KR100552805B1
Опубликовано: 22-02-2006
Автор(ы): 김홍래
Принадлежит: 동부아남반도체 주식회사
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Номер патента: US20240177783A1. Автор: Hyung Jin Choi. Владелец: SK hynix Inc. Дата публикации: 2024-05-30.

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Номер патента: US20140046652A1. Автор: Yan Li. Владелец: Individual. Дата публикации: 2014-02-13.

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Номер патента: US8258472B2. Автор: Tamotsu Shindo,Yuji Tange. Владелец: Hitachi High Technologies Corp. Дата публикации: 2012-09-04.

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Номер патента: US20200408798A1. Автор: Tsu-Te Chen. Владелец: Individual. Дата публикации: 2020-12-31.

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Номер патента: US20180006762A1. Автор: JUNG Jin Yang,Mu Gyeom Kim,Keun Tae Jung. Владелец: Samsung Display Co Ltd. Дата публикации: 2018-01-04.

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Номер патента: EP3644230A1. Автор: Hyunjoon Kim,Dongkyun KIM,Seokwhan CHUNG,Jingu Heo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-04-29.

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Номер патента: US20210126923A1. Автор: Jin-Kyu Kim. Владелец: Green Zone Security Ltd. Дата публикации: 2021-04-29.

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Номер патента: CA2151324C. Автор: Hideji Tajima. Владелец: Precision System Science Co Ltd. Дата публикации: 2001-07-31.

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Номер патента: US20210191147A1. Автор: Devaraj Thiruppathi. Владелец: Individual. Дата публикации: 2021-06-24.

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Номер патента: EP1187045A3. Автор: Nakamura Tadahiko,Kadowaki Tomohiko. Владелец: Semiconductor Technology Academic Research Center. Дата публикации: 2006-05-03.

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Номер патента: US20010007119A1. Автор: Jun Kitahara,Kunihiro Katayama,Kenichi Kaki,Kazunori Furusawa,Tsunehiro Tobita. Владелец: Individual. Дата публикации: 2001-07-05.

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Номер патента: US11755116B2. Автор: Kyoung Soo Yi,Se Hwan LIM. Владелец: Tegway Co Ltd. Дата публикации: 2023-09-12.

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Номер патента: US20100213528A1. Автор: Chia-Hsing Chen. Владелец: Individual. Дата публикации: 2010-08-26.

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Номер патента: RU2458460C2. Автор: Ясуси САСАКИ,Юхитирох МУРАКАМИ,Сиге ФУРУТА. Владелец: Шарп Кабусики Кайся. Дата публикации: 2012-08-10.

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Номер патента: US20110202158A1. Автор: Satoshi Nakamura,Hiroyoshi Kako,Akihito Ishizaka. Владелец: Sankyo Oilless Industries Inc. Дата публикации: 2011-08-18.

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Номер патента: US20080298135A1. Автор: Chia-Hsing Chen. Владелец: Individual. Дата публикации: 2008-12-04.

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Номер патента: US5329484A. Автор: Hideo Tsuiki. Владелец: NEC Corp. Дата публикации: 1994-07-12.

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Номер патента: US20130071972A1. Автор: Hisao Nagai,Kenichirou Nishida. Владелец: Panasonic Corp. Дата публикации: 2013-03-21.

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Номер патента: US20240273240A1. Автор: Kuan-Lun Chiu. Владелец: Nuvoton Technology Corp. Дата публикации: 2024-08-15.

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Номер патента: US09674557B2. Автор: Jeong-Hun Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-06-06.

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Номер патента: US20180288874A1. Автор: Toshio Kataoka,Kei Katou. Владелец: SUMITOMO OSAKA CEMENT CO LTD. Дата публикации: 2018-10-04.

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Номер патента: US20210183446A1. Автор: Se-Hwan Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-06-17.

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Номер патента: US12032337B2. Автор: Robert Blume,Aaron Rutkowski. Владелец: Individual. Дата публикации: 2024-07-09.

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Номер патента: US20230236553A1. Автор: Ming-Wei Chen,Chia-Wei Chen,Ching-Pei Lin,Chung-Yi Chiu,Hsiao-Ying Yang,Te-Hsuan Chen. Владелец: United Microelectronics Corp. Дата публикации: 2023-07-27.

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Номер патента: US20240230639A9. Автор: Andreas Thon,Adonis Stassinopoulos,Scott Rongey,Houman Yaghoubi,Valerio PINI,Matthias MÖSL,Jesús Óscar AHUMADA HEREDERO,Chloé Alexia RODRIGUEZ. Владелец: Quidel Corp. Дата публикации: 2024-07-11.

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Номер патента: US20010008540A1. Автор: Toshio Ichizaki,Tomoru Oba. Владелец: Individual. Дата публикации: 2001-07-19.

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Номер патента: US11808807B2. Автор: Kazunori Nemoto,Akira Kotabe,Akeo Satoh. Владелец: Hitachi Astemo Ltd. Дата публикации: 2023-11-07.

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Номер патента: TW417226B. Автор: Itaru Tamura. Владелец: Toshiba Corp. Дата публикации: 2001-01-01.

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Номер патента: US7311407B2. Автор: Takeshi Yamamoto,Akira Miyake. Владелец: Canon Inc. Дата публикации: 2007-12-25.

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Номер патента: US20060199283A1. Автор: Sean Malolepszy,Marty Grabham,Ronald Michallick. Владелец: Texas Instruments Inc. Дата публикации: 2006-09-07.

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Номер патента: US20090153534A1. Автор: Yasuhiro Ogata,Yasuyuki Yokota. Владелец: Renesas Technology Corp. Дата публикации: 2009-06-18.

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Номер патента: US20230358447A1. Автор: Jong Ok Ko,Kyoung Soo Yi,Ock Kyun OH. Владелец: Tegway Co Ltd. Дата публикации: 2023-11-09.

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Номер патента: US11960310B2. Автор: Dongyeol Lee,Dongwook Suh. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-04-16.

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Номер патента: US20160125940A1. Автор: Seok Joon KANG. Владелец: SK hynix Inc. Дата публикации: 2016-05-05.

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Номер патента: US20180281375A1. Автор: Zhaohui Li,Changhai FENG,Zengsheng He. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2018-10-04.

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Номер патента: US20190250710A1. Автор: Kyoung Soo Yi,Se Hwan LIM. Владелец: Tegway Co Ltd. Дата публикации: 2019-08-15.

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Номер патента: US20240038825A1. Автор: Wonseok Choi,Jeonghyo Kwon,Sungmin Park,Byoungkwon Cho. Владелец: LG ELECTRONICS INC. Дата публикации: 2024-02-01.

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Номер патента: US20200341552A1. Автор: Kyoung Soo Yi,Se Hwan LIM. Владелец: Tegway Co Ltd. Дата публикации: 2020-10-29.

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Номер патента: US20230250280A1. Автор: Jinsoo Lee,Hangyu HWANG,Pranveer Singh RATHORE,Kyungrae Kim,Bongjoon Kim,Changyun SHIN,Sambong JEONG,Gukhyun HAN. Владелец: Hanwha Compound Corp. Дата публикации: 2023-08-10.

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Номер патента: EP4407004A1. Автор: Jinsoo Lee,Hangyu HWANG,Pranveer Singh RATHORE,Kyungrae Kim,Bongjoon Kim,Changyun SHIN,Sambong JEONG,Gukhyun HAN. Владелец: Hanwha Compound Corp. Дата публикации: 2024-07-31.

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Номер патента: CA2755374C. Автор: Yasuhiro Koike,Hirotsugu Yoshida,Tazuru Okamoto. Владелец: Sekisui Chemical Co Ltd. Дата публикации: 2015-09-15.

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Номер патента: TW201042725A. Автор: Beom-Ho Shin. Владелец: Mirae Corp. Дата публикации: 2010-12-01.

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Номер патента: EP1253427A2. Автор: Mie Takahashi,Masataka Nadaoka,Hirotaka Tanaka,Tatsuro Kawamura,Fumihisa Kitawaki,Nobuyuki Shigeto. Владелец: Matsushita Electric Industrial Co Ltd. Дата публикации: 2002-10-30.

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Номер патента: EP2214025A1. Автор: Kenji Okada,Hiroshi Saiki,Yoshiyuki Fujii,Hirofumi Sugimoto,Masaaki Kitoh,Nobuyasu Higashi. Владелец: Panasonic Corp. Дата публикации: 2010-08-04.

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Номер патента: WO2009061060A1. Автор: Yong Kwan Park,Jang-Youl Shin. Владелец: THINKWARE SYSTEMS CORPORATION. Дата публикации: 2009-05-14.

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Номер патента: ZA202309602B. Автор: Yi Lei,Qing Ye,Huili Liu,Yongqiang Cao,Taocheng Hu. Владелец: Foshan Jma Aluminium Ind Co Ltd. Дата публикации: 2024-06-26.

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Номер патента: US09922480B2. Автор: James Mills,David Wong,Mario SORCE. Владелец: Kaba Ilco Inc. Дата публикации: 2018-03-20.

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Номер патента: US09913940B2. Автор: Thierry Court. Владелец: GAMBRO LUNDIA AB. Дата публикации: 2018-03-13.

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Номер патента: KR100684578B1. Автор: 추교섭,박귀복. Владелец: 엘지.필립스 엘시디 주식회사. Дата публикации: 2007-02-20.

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Номер патента: KR100451659B1. Автор: 하경수,권오남,김동국,박용인,조흥렬. Владелец: 엘지.필립스 엘시디 주식회사. Дата публикации: 2004-10-08.

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Номер патента: KR100433805B1. Автор: 백흠일. Владелец: 엘지.필립스 엘시디 주식회사. Дата публикации: 2004-06-02.

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Номер патента: US8206997B2. Автор: Akio Hasebe,Kenji Kawakami,Yasunori Narizuka,Seigo Nakamura,Yasuhiro Motoyama. Владелец: Renesas Electronics Corp. Дата публикации: 2012-06-26.

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Номер патента: US7342639B2. Автор: Johann Jung,Jeong-Rok Kim,Kyung-Kyu Kang,Jae-Deuk Shin,Myung-Woo Nam. Владелец: LG Philips LCD Co Ltd. Дата публикации: 2008-03-11.

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Номер патента: US20230395768A1. Автор: Kyuhyun Bang. Владелец: LG ELECTRONICS INC. Дата публикации: 2023-12-07.

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Номер патента: US20230333239A1. Автор: Jong Chul LIM. Владелец: Hyundai Mobis Co Ltd. Дата публикации: 2023-10-19.

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Номер патента: US20230336980A1. Автор: Jong Chul LIM. Владелец: Hyundai Mobis Co Ltd. Дата публикации: 2023-10-19.

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Номер патента: US20140111402A1. Автор: Min-Weun Kim. Владелец: Samsung Display Co Ltd. Дата публикации: 2014-04-24.

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Номер патента: US9214223B2. Автор: Hyung Dong Lee,Hyun Mi HWANG. Владелец: SK hynix Inc. Дата публикации: 2015-12-15.

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Номер патента: US20230209007A1. Автор: Shih-Chi Huang,Royce Yu-Chun Hong,Ke-Hwa Weng,Chih-Kang Tuan. Владелец: IPEVO Corp. Дата публикации: 2023-06-29.

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Номер патента: US20220285939A1. Автор: KO Min Sung,KOO Ja Kyun,EOM Tae Seon,LEE Yong Ha,CHANG Dong Hwan. Владелец: KOREA DISTRICT HEATING CORP.. Дата публикации: 2022-09-08.

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Номер патента: KR100709502B1. Автор: 박귀복,정태용. Владелец: 엘지.필립스 엘시디 주식회사. Дата публикации: 2007-04-20.

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Номер патента: US20030010275A1. Автор: Antonije Radojevic,Richard Osgood,Miguel Levy. Владелец: Columbia University of New York. Дата публикации: 2003-01-16.

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Номер патента: US20210097380A1. Автор: Yang-Kyu Choi,Joon-Kyu HAN,Gyeong Jun YUN. Владелец: Korea Advanced Institute of Science and Technology KAIST. Дата публикации: 2021-04-01.

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Номер патента: US20160318454A1. Автор: Liu Guoqing. Владелец: . Дата публикации: 2016-11-03.

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Номер патента: US20150346104A1. Автор: Chia-Fu Chou,Thierry LEICHLE,Yii-Lih LIN,Pattamon TEERAPANICH. Владелец: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE CNRS. Дата публикации: 2015-12-03.

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Номер патента: US9958396B2. Автор: Chia-Fu Chou,Thierry LEICHLE,Yii-Lih LIN,Pattamon TEERAPANICH. Владелец: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE CNRS. Дата публикации: 2018-05-01.

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Номер патента: KR100684580B1. Автор: 김홍진. Владелец: 엘지.필립스 엘시디 주식회사. Дата публикации: 2007-02-20.

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Номер патента: KR100372579B1. Автор: 김종우,하영훈,소재문. Владелец: 엘지.필립스 엘시디 주식회사. Дата публикации: 2003-02-17.

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Номер патента: US20170162105A1. Автор: Kim Myoung-Soo. Владелец: . Дата публикации: 2017-06-08.

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Номер патента: US20150371890A1. Автор: Michael A. Huff. Владелец: Corp for National Research Initiatives. Дата публикации: 2015-12-24.

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Номер патента: GB9813658D0. Автор: . Владелец: Hyundai Electronics Industries Co Ltd. Дата публикации: 1998-08-26.

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Номер патента: US20190172385A1. Автор: MORI Ayumu,JITSUI Kazuto,EDO Keiko. Владелец: . Дата публикации: 2019-06-06.

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Номер патента: US20170212284A1. Автор: Zhang Xianwen,LIU Xiaolin,WANG Shijie,CHA Weijiang,JIA Weican,XIE Bingnai,RUAN Hai,QIU Shanghuang,ZHANG Wuewen,CUI Guohong. Владелец: Hangzhou Chinastars Reflective Material Co., Ltd.. Дата публикации: 2017-07-27.

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Номер патента: US20180288874A1. Автор: Katou Kei,KATAOKA Toshio. Владелец: . Дата публикации: 2018-10-04.

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Номер патента: US20200408798A1. Автор: Tsu-Te Chen. Владелец: Individual. Дата публикации: 2020-12-31.

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Номер патента: JP5958870B2. Автор: スー ジョン、ギル,ジョン キム、ユ. Владелец: Individual. Дата публикации: 2016-08-02.

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Номер патента: KR101151885B1. Автор: 김태윤,문귀원,장재웅,민병희. Владелец: 한국항공우주연구원. Дата публикации: 2012-05-31.

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Номер патента: KR102293333B1. Автор: 피도연. Владелец: 피도연. Дата публикации: 2021-08-23.

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Номер патента: KR101592203B1. Автор: 황기현,신필순,서동옥. Владелец: 중소기업은행. Дата публикации: 2016-02-05.

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Номер патента: KR102397202B1. Автор: 조용재,안성대. Владелец: 엘지전자 주식회사. Дата публикации: 2022-05-12.

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Номер патента: JPH10240612A. Автор: Tomoaki Masaki,友章 正木. Владелец: Canon Inc. Дата публикации: 1998-09-11.

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Номер патента: KR101719989B1. Автор: 이병헌,유경희,채지석. Владелец: 엘지전자 주식회사. Дата публикации: 2017-03-27.

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Номер патента: KR100646333B1. Автор: 임병찬. Владелец: 엘지전자 주식회사. Дата публикации: 2006-11-23.

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Номер патента: KR101603666B1. Автор: 이주형,김형걸,송준호,조재현,김남헌,김동권,윤경훈,양성훈,신명훈. Владелец: 삼성디스플레이 주식회사. Дата публикации: 2016-03-28.

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Номер патента: KR101138853B1. Автор: 한상철. Владелец: (주)알티아이엔지니어링. Дата публикации: 2012-05-14.

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Номер патента: KR101784063B1. Автор: 이승훈,김광기,유헌. Владелец: 국립암센터. Дата публикации: 2017-10-11.

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Номер патента: EP1772703A3. Автор: Kaoru Kabushiki Kaisha Topcon Kumagai,Shinji Kabushiki Kaisha Topcon Yamaguchi. Владелец: Topcon Corp. Дата публикации: 2011-03-23.

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Номер патента: KR101767565B1. Автор: 김종환,최석호,곽준호. Владелец: 삼성디스플레이 주식회사. Дата публикации: 2017-08-14.

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Номер патента: KR101461949B1. Автор: 김종환. Владелец: 엘지전자 주식회사. Дата публикации: 2014-11-14.

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Номер патента: WO1993020486A1. Автор: Federico A. Maestre. Владелец: Maestre Federico A. Дата публикации: 1993-10-14.

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Номер патента: KR102456174B1. Автор: 이윤석,박상무,곽도영. Владелец: 삼성전자주식회사. Дата публикации: 2022-10-19.

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Номер патента: TWI593553B. Автор: 郭埈豪,崔錫澔,金種煥. Владелец: 三星顯示器有限公司. Дата публикации: 2017-08-01.

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Номер патента: MA45302B1. Автор: Takashi Iwasaki,Kenji Saito,Yoshiya Abiko,Makoto Inagaki,Akihiko Kojima,Youichi Nagai. Владелец: Sumitomo Electric Industries. Дата публикации: 2021-06-30.

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Номер патента: US9329423B2. Автор: Sung-Hoon Yang,Dong-Kwon Kim,Jun-ho Song,Joo-hyung Lee,Hyung-Guel Kim,Nam-Heon Kim,Kyung-Hun Yoon,Myung-Hum SHIN,Jae-hyun Cho. Владелец: Samsung Display Co Ltd. Дата публикации: 2016-05-03.

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Номер патента: KR100809333B1. Автор: 이광진,조우영. Владелец: 삼성전자주식회사. Дата публикации: 2008-03-05.

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Номер патента: KR102220347B1. Автор: 이정기,양철승,유호원. Владелец: 한국전자기술연구원. Дата публикации: 2021-02-26.

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Номер патента: KR102540451B1. Автор: 김세영,유준민. Владелец: 유비벨록스(주). Дата публикации: 2023-06-08.

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Номер патента: US6008061A. Автор: Kunihiro Kasai. Владелец: Toshiba Corp. Дата публикации: 1999-12-28.

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Номер патента: KR101410378B1. Автор: 이시우. Владелец: 주식회사 엠.이.시. Дата публикации: 2014-06-24.

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Номер патента: US10338283B2. Автор: Xiaolin Liu,Shijie Wang,Xianwen Zhang,Weijiang CHA,Weican JIA,Bingnai XIE,Hai RUAN,Shanghuang QIU,Wuewen ZHANG,Guohong CUI. Владелец: HANGZHOU CHINASTARS REFLECTIVE MATERIAL CO Ltd. Дата публикации: 2019-07-02.

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Номер патента: KR20090029506A. Автор: 손형규. Владелец: 주식회사 에이디피엔지니어링. Дата публикации: 2009-03-23.

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Номер патента: CN113169250A. Автор: 朴相武,金炳澈,郭度英,吴旼燮. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-07-23.

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Номер патента: US20040146238A1. Автор: Tatsuro Uchida. Владелец: Canon Inc. Дата публикации: 2004-07-29.

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Номер патента: KR20220065405A. Автор: 정효진,이선용,이용환,권순태,정용진,송화영,황형진,허명립. Владелец: 한국원자력연구원. Дата публикации: 2022-05-20.

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Номер патента: US8682303B2. Автор: Sun-jung Lee,Tae-Kyun Kim,Sang-Youn Lee,Young-Sung Kim,Tae-Hyo Ahn,Yeon-Dae Kim,Hae-Young Song,Won-Taik Hwang,Yoon-Kyoo Jung. Владелец: KT Corp. Дата публикации: 2014-03-25.

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Номер патента: TWI361376B. Автор: Hui Wen Wang,Yihfeng Kao,Fu Chiang Chou,Chun Yao Hou,Chinchung Shih. Владелец: HTC Corp. Дата публикации: 2012-04-01.

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Номер патента: TW201017191A. Автор: Eun-Jung Lee. Владелец: LG Display Co Ltd. Дата публикации: 2010-05-01.

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Номер патента: US20050024308A1. Автор: Hisanobu Ishiyama. Владелец: Seiko Epson Corp. Дата публикации: 2005-02-03.

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Номер патента: KR20120086910A. Автор: 진흥석. Владелец: 삼성디스플레이 주식회사. Дата публикации: 2012-08-06.

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Номер патента: EP2075682A1. Автор: Yih-Feng KAO,Chin-Chung SHIH,Chun-Yao Hou,Hui-Wen Wang,Fu-Chiang Chou. Владелец: HTC Corp. Дата публикации: 2009-07-01.

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Номер патента: US6937216B1. Автор: Hisanobu Ishiyama. Владелец: Seiko Epson Corp. Дата публикации: 2005-08-30.

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Номер патента: KR100789138B1. Автор: 이근우,김진백. Владелец: 삼성전자주식회사. Дата публикации: 2007-12-27.

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Номер патента: CN1105381C. Автор: 前纳良昭,儿玉康弘,寺崎均. Владелец: Sanyo Electric Co Ltd. Дата публикации: 2003-04-09.

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Номер патента: EP2228645A4. Автор: Atsushi Fukunaga,Takahiro Nakaminami,Kouji Kashiwada. Владелец: Panasonic Corp. Дата публикации: 2011-01-26.

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Номер патента: WO2007111471A1. Автор: Sun-jung Lee,Tae-Kyun Kim,Sang-Youn Lee,Young-Sung Kim,Tae-Hyo Ahn,Yeon-Dae Kim,Hae-Young Song,Won-Taik Hwang,Yoon-Kyoo Jung. Владелец: Ktfreetel Co., Ltd.. Дата публикации: 2007-10-04.

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Номер патента: US7740357B2. Автор: Osamu Nishimura,Akio Kobayashi,Akihiro Koga,Hiroyuki Kawashima,Ryo Furukawa,Kei Masunishi. Владелец: Topcon Corp. Дата публикации: 2010-06-22.

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Номер патента: US7018085B2. Автор: Jin-Baek Kim,Keun-Woo Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2006-03-28.

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Номер патента: US20050142796A1. Автор: Sung Jung,Jum Kim. Владелец: DongbuAnam Semiconductor Inc. Дата публикации: 2005-06-30.

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Номер патента: US10763125B2. Автор: Wei He,Chris Wiebe,Hongyong Xue. Владелец: Alpha and Omega Semiconductor Cayman Ltd. Дата публикации: 2020-09-01.

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Номер патента: US20190385863A1. Автор: Wei He,Chris Wiebe,Hongyong Xue. Владелец: Alpha and Omega Semiconductor Cayman Ltd. Дата публикации: 2019-12-19.

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Номер патента: US20170194433A1. Автор: Seung Hyun Kim,Soo Chang Kang,Yong Won Lee,Dae Won HWANG. Владелец: MagnaChip Semiconductor Ltd. Дата публикации: 2017-07-06.

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Номер патента: EP4421866A1. Автор: Walter Hartner,Simon Kornprobst,Tuncay ERDOL. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2024-08-28.

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Номер патента: US20240290733A1. Автор: Walter Hartner,Simon Kornprobst,Tuncay ERDOL. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2024-08-29.

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Номер патента: US20240332245A1. Автор: Woon Chun Kim,Dae Seo Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-10-03.

Method for fabricating polycide dual gate in semiconductor device

Номер патента: US20010006832A1. Автор: Jong Bae,Ji Park,Dong Sohn. Владелец: Hyundai Electronics Industries Co Ltd. Дата публикации: 2001-07-05.

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Номер патента: US20240250141A1. Автор: Chih-Hao Wang,Kuo-Cheng Chiang,Shi Ning Ju,Chih-Chao CHOU,Wen-Ting Lan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-25.

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Номер патента: US20200152577A1. Автор: Ji Won Kang,Tae Yeol Kim,Sang Jin HYUN,Jin Il Lee,Chung Hwan Shin. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-05-14.

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Номер патента: US20190295958A1. Автор: Ji Won Kang,Tae Yeol Kim,Sang Jin HYUN,Jin Il Lee,Chung Hwan Shin. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-09-26.

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Номер патента: US20090176320A1. Автор: Jin-Ho Kim,Ki-Min Lee. Владелец: Dongbu HitekCo Ltd. Дата публикации: 2009-07-09.

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Номер патента: US20030015714A1. Автор: Albert Talin. Владелец: Motorola Inc. Дата публикации: 2003-01-23.

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Номер патента: US20210118771A1. Автор: SunYong Lee,Sarah Eunkyung Kim,Tae Hyeob Im. Владелец: Foundation for Research and Business of Seoul National University of Science and Technology. Дата публикации: 2021-04-22.

Semiconductor devices comprising getter layers and methods of making and using the same

Номер патента: US9620428B2. Автор: Kevin Matocha,Sujit Banerjee,Kiran CHATTY,John Nowak. Владелец: Monolith Semiconductor Inc. Дата публикации: 2017-04-11.

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Номер патента: US09755049B2. Автор: Sung Min Kim,Sunhom Steve Paak. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-09-05.

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Номер патента: US20220157717A1. Автор: Chin-Ling Huang. Владелец: Nanya Technology Corp. Дата публикации: 2022-05-19.

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Номер патента: US20230268303A1. Автор: Chun-Cheng Liao. Владелец: Nanya Technology Corp. Дата публикации: 2023-08-24.

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Номер патента: US20160284605A9. Автор: Tahir Ghani,Abhijit Jayant Pethe,Harry Gomez,Annalisa Cappellani. Владелец: Individual. Дата публикации: 2016-09-29.

A semiconductor device with good reverse recovery withstand and the method of manufacturing the same

Номер патента: EP1098371A3. Автор: Ko Fuji Electric Co. Ltd. Yoshikawa,Takeshi Fuji Electric Co. Ltd. Fujii,Michio Fuji Electric Co Ltd. Nemoto. Владелец: Fuji Electric Co Ltd. Дата публикации: 2003-06-25.

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Номер патента: US7772645B2. Автор: Shigeru Mori. Владелец: NEC LCD Technologies Ltd. Дата публикации: 2010-08-10.

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Номер патента: US20100283106A1. Автор: Shigeru Mori. Владелец: NEC LCD Technologies Ltd. Дата публикации: 2010-11-11.

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Номер патента: US20240178307A1. Автор: Sungil Park,Jaehyun Park,Minsu Seol,Kyung-Eun Byun,Eunkyu Lee,JunYoung KWON,Minseok YOO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-05-30.

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Номер патента: US12051648B2. Автор: Chih-Tsung WU. Владелец: Nanya Technology Corp. Дата публикации: 2024-07-30.

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Номер патента: US20020015194A1. Автор: Kouji Watanabe. Владелец: Fuji Photo Film Co Ltd. Дата публикации: 2002-02-07.

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Номер патента: US20080185663A1. Автор: Young Ho Lee,Dong Sun Sheen,Seok Pyo Song. Владелец: Hynix Semiconductor Inc. Дата публикации: 2008-08-07.

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Номер патента: US20060278903A1. Автор: Kazunari Ishimaru. Владелец: Toshiba Corp. Дата публикации: 2006-12-14.

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Номер патента: US20230298937A1. Автор: Jin Woong Kim,Ju Heon YANG. Владелец: SK hynix Inc. Дата публикации: 2023-09-21.

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Номер патента: US20230268422A1. Автор: Shuen-Shin Liang,Keng-Chu Lin,Chen-Han Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-08-24.

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Номер патента: US09728465B2. Автор: Sang-Jin Hyun,Kuo Tai Huang,Ryuji Tomita,Joon-Gon Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-08-08.

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Номер патента: US7687362B2. Автор: Young Ho Lee,Dong Sun Sheen,Seok Pyo Song. Владелец: Hynix Semiconductor Inc. Дата публикации: 2010-03-30.

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Номер патента: US6825511B2. Автор: Young-hee Song,Min-Sang Park,Ill-Heung Choi,Min-Young Son. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2004-11-30.

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Номер патента: US20080160682A1. Автор: Young-hee Song,Min-Sang Park,Ill-Heung Choi,Min-Young Son. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2008-07-03.

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Номер патента: WO2006090949A1. Автор: Dong Jun Lee,You-hie Han,Hak Yong Lee,Won Chul Jung,Eun Jeong Hong,Jong Hyun Suh. Владелец: EO TECHNICS CO., LTD.. Дата публикации: 2006-08-31.

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Номер патента: US20010028097A1. Автор: Fumitomo Matsuoka,Kunihiro Kasai. Владелец: Individual. Дата публикации: 2001-10-11.

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Номер патента: US10297687B2. Автор: Sharma Deepak,YeonCheol Heo,Kwanyoung Chun. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-05-21.

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Номер патента: US20060214314A1. Автор: Masazumi Amagai,Masako Watanabe. Владелец: Texas Instruments Inc. Дата публикации: 2006-09-28.

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Номер патента: US09812390B2. Автор: Mei-Ling Chen,Keng-Chu Lin,Joung-Wei Liou,Hui-Chun Yang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-11-07.

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Номер патента: US20110275192A1. Автор: Anthony D. Kurtz,Alexander A. Ned. Владелец: Kulite Semiconductor Products Inc. Дата публикации: 2011-11-10.

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Номер патента: US12087844B2. Автор: Chun-Sheng Liang,Hsin-Che Chiang,Kuo-Hua Pan,Wei-Chih Kao,Yu-San Chien. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-10.

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Номер патента: US20240355643A1. Автор: Seunghyun Lee,Seonghwan Park,Bom Lee,InHo Seo. Владелец: Jcet Stats Chippac Korea Ltd. Дата публикации: 2024-10-24.

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Номер патента: US20240363731A1. Автор: Chun-Sheng Liang,Hsin-Che Chiang,Kuo-Hua Pan,Wei-Chih Kao,Yu-San Chien. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-31.

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Номер патента: US20010017375A1. Автор: Shoji Hirata,Hironobu Narui. Владелец: Sony Corp. Дата публикации: 2001-08-30.

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Номер патента: US20210111279A1. Автор: Sei-Hyung Ryu. Владелец: Cree Inc. Дата публикации: 2021-04-15.

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Номер патента: US20170271330A1. Автор: Kang-ill Seo,Dong-il Bae. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-09-21.

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Номер патента: US20220045059A1. Автор: Kang-ill Seo,Dong-il Bae. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-02-10.

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Номер патента: US20160013186A1. Автор: Kang-ill Seo,Dong-il Bae. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-01-14.

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Номер патента: US11742393B2. Автор: Ding-I Liu,Jyh-Nan Lin,Yuh-Ta FAN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-08-29.

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Номер патента: US20240258201A1. Автор: Jong Hoon Kim,Eun Hye DO. Владелец: SK hynix Inc. Дата публикации: 2024-08-01.

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Номер патента: US12132046B2. Автор: Mirco Cantoro,Dong Il Bae,Ho-jun Kim,Beomjin PARK. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-10-29.

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Номер патента: US12062572B2. Автор: Shau-Lin Shue,Gary Liu,Shao-Kuan Lee,Cheng-Chin Lee,Hsin-Yen Huang,Ting-Ya Lo,Chi-Lin Teng,Cherng-Shiaw Tsai,Kuang-Wei Yang,Hsiao-Kang Chang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-13.

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Номер патента: US09905559B2. Автор: Kang-ill Seo,Dong-il Bae. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-02-27.

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Номер патента: US09899498B2. Автор: Chun-Yu Chen,Tien-Chen Chan,Shu-Yen Chan,Ming-Hua Chang,Yu-Shu Lin,Yen-Hsing Chen,Chung-Ting Huang,Yi-Fan Li,Zih-Hsuan Huang. Владелец: United Microelectronics Corp. Дата публикации: 2018-02-20.

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Номер патента: US09735153B2. Автор: Kang-ill Seo,Dong-il Bae. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-08-15.

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Номер патента: US11929410B2. Автор: Jin Woong Kim. Владелец: SK hynix Inc. Дата публикации: 2024-03-12.

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Номер патента: US20120142151A1. Автор: Toshiyuki Sasaki. Владелец: Toshiba Corp. Дата публикации: 2012-06-07.

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Номер патента: US11996389B2. Автор: Jun Liu,Weihua Cheng. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-05-28.

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Номер патента: US20130260547A1. Автор: Ming Zhu,Bao-Ru Young,Hak-Lay Chuang,Sheng-Chen Chung,Jyun-Ming Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2013-10-03.

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Номер патента: US12100625B2. Автор: Xusheng Wu,Chang-Miao Liu,Wei-Lun Min. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-24.

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Номер патента: US11916125B2. Автор: Chih-Hao Wang,Kuo-Cheng Chiang,Shi Ning Ju,Chih-Chao CHOU,Wen-Ting Lan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-02-27.

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Номер патента: US20220359699A1. Автор: Chih-Hao Wang,Kuo-Cheng Chiang,Shi Ning Ju,Chih-Chao CHOU,Wen-Ting Lan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-11-10.

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Номер патента: US11043450B2. Автор: Chih Cheng LIU. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2021-06-22.

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Номер патента: US20230139278A1. Автор: Kunal R. Parekh. Владелец: Micron Technology Inc. Дата публикации: 2023-05-04.

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Номер патента: US11798881B2. Автор: Chih Cheng LIU. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-10-24.

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Номер патента: US20200357741A1. Автор: Chih Cheng LIU. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2020-11-12.

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Номер патента: US20190082228A1. Автор: Jae-Young Lee,Sung-Ik Park,Sun-Hyoung Kwon,Heung-Mook Kim. Владелец: Electronics and Telecommunications Research Institute ETRI. Дата публикации: 2019-03-14.

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Номер патента: US10187701B2. Автор: Jae-Young Lee,Sung-Ik Park,Sun-Hyoung Kwon,Heung-Mook Kim. Владелец: Electronics and Telecommunications Research Institute ETRI. Дата публикации: 2019-01-22.

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Номер патента: US6104053A. Автор: Yukihiro Nagai. Владелец: Mitsubishi Electric Corp. Дата публикации: 2000-08-15.

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Номер патента: US5637512A. Автор: Mitsutoshi Miyasaka,Thomas W. Little. Владелец: Seiko Epson Corp. Дата публикации: 1997-06-10.

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Номер патента: US20240030290A1. Автор: Wei-Cheng Lin,Jiann-Tyng Tzeng,Ching-Yu Huang,Wei-Cheng TZENG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-01-25.

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Номер патента: US11824121B2. Автор: Yen-Ming Chen,Yen-Chieh Huang,Feng-Cheng Yang,Chia-Ta Yu,Wei-Yuan Lu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-21.

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Номер патента: US6818462B1. Автор: Zhigang Wang,Tien-Chun Yang,Nian Yang. Владелец: Advanced Micro Devices Inc. Дата публикации: 2004-11-16.

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Номер патента: US20230231053A1. Автор: Yen-Ming Chen,Yen-Chieh Huang,Feng-Cheng Yang,Chia-Ta Yu,Wei-Yuan Lu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-07-20.

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Номер патента: US20230335584A1. Автор: Chia-Hao Chang,Yu-Ming Lin,Tien-Lu Lin,Chia-Lin Chuang,Che-Chen WU. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-10-19.

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Номер патента: US20230387305A1. Автор: Yen-Ming Chen,Yen-Chieh Huang,Feng-Cheng Yang,Chia-Ta Yu,Wei-Yuan Lu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-30.

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Номер патента: US20180211922A1. Автор: Ji Won Kang,Tae Yeol Kim,Sang Jin HYUN,Jin Il Lee,Chung Hwan Shin. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-07-26.

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Номер патента: EP4375067A1. Автор: Leonid Ionov,Alla Synytska. Владелец: Biovature GmbH. Дата публикации: 2024-05-29.

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Номер патента: WO2024110502A1. Автор: Leonid Ionov,Synytska ALLA. Владелец: Biovature GmbH. Дата публикации: 2024-05-30.

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Номер патента: US20100059890A1. Автор: Young Jin Lee,Dong Ha JUNG,Seung Jin Yeom,Jeong Tae Kim,Baek Mann Kim. Владелец: Hynix Semiconductor Inc. Дата публикации: 2010-03-11.

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Номер патента: US11894304B2. Автор: Chih-Tsung WU. Владелец: Nanya Technology Corp. Дата публикации: 2024-02-06.

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Номер патента: US20040227173A1. Автор: Gwan-Hyeob Koh,Su-Jin Ahn,Hyoung-Joon Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2004-11-18.

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Номер патента: US20110306178A1. Автор: Seung Joo Baek. Владелец: Hynix Semiconductor Inc. Дата публикации: 2011-12-15.

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Номер патента: US20120103409A1. Автор: Eun Sung Lee,Sang Soo Jee,Se Yun Kim,Sang Mock LEE,Do-Hyang Kim,Ka Ram LIM,In Yong SONG. Владелец: Industry Academic Cooperation Foundation of Yonsei University. Дата публикации: 2012-05-03.

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Номер патента: US09953861B2. Автор: Chun-Sheng Wu,Chun-Li Lin,Ding-I Liu,Po-Hsiung Leu,Yi-Fang LI,Geng-Shuoh Chang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-04-24.

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Номер патента: US8957492B2. Автор: Akihiro Takahashi. Владелец: Toshiba Corp. Дата публикации: 2015-02-17.

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Номер патента: US6133623A. Автор: Kenzo Yoshimori,Tetsuya Otsuki. Владелец: Seiko Epson Corp. Дата публикации: 2000-10-17.

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Номер патента: US20110014754A1. Автор: Chang-Min Hong,Soon-Moon Jung,Han-Byung Park,Hoon Lim,Jae-Joo Shim,Byoung-Keun Son,Cha-Dong Yeo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2011-01-20.

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Номер патента: US6218296B1. Автор: Tae-Young Chung,Yoo-Sang Hwang,Dong-Hwa Kwak. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2001-04-17.

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Номер патента: US6043114A. Автор: Eiichi Yamada,Tatsumi Shirasu,Norio Suzuki,Shogo Kiyota,Manabu Kitano,Yoshihiko Sakurai,Takashi Naganuma,Hisashi Arakawa,Hiroto Kawagoe,Yuji Sugino. Владелец: HITACHI LTD. Дата публикации: 2000-03-28.

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Номер патента: US20210083046A1. Автор: Chih-Hao Chang,Yu-Ming Lin,Tien-Lu Lin,Chia-Lin Chuang,Che-Chen WU. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-03-18.

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Номер патента: US20240006321A1. Автор: Chih-Tsung WU. Владелец: Nanya Technology Corp. Дата публикации: 2024-01-04.

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Номер патента: US11798866B2. Автор: Sangjun Park,Eunji Kim,Sungdong CHO,Hakseung LEE,Kwangwuk Park,Daesuk Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-10-24.

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Номер патента: US20080073693A1. Автор: Chul-Sung Kim,Bon-young Koo,Young-Jin Noh,Sung-Kweon Baek. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2008-03-27.

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Номер патента: US20240047400A1. Автор: Chun-Cheng Liao. Владелец: Nanya Technology Corp. Дата публикации: 2024-02-08.

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Номер патента: US8080850B2. Автор: Shigeru Mori. Владелец: NEC LCD Technologies Ltd. Дата публикации: 2011-12-20.

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Номер патента: US20020146883A1. Автор: Tomoyuki Furuhata. Владелец: Seiko Epson Corp. Дата публикации: 2002-10-10.

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Номер патента: US20240014083A1. Автор: LI Wang,Hem P. Takiar,Jungbae Lee,Raj K. Bansal,Jian Wei Lim. Владелец: Micron Technology Inc. Дата публикации: 2024-01-11.

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Номер патента: US11862639B2. Автор: SADAAKI Masuoka,Sang Hoon Lee,Woo Cheol Shin,Myung Gil Kang,Sung Man WHANG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-01-02.

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Номер патента: US20070082463A1. Автор: Michael Bauer,Ludwig Heitzer,Peter Strobel,Eric Kuerzel. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2007-04-12.

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Номер патента: US20240071891A1. Автор: Thiagarajan Raman. Владелец: Micron Technology Inc. Дата публикации: 2024-02-29.

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Номер патента: US20240105602A1. Автор: Won Tae KOO,Mir IM. Владелец: SK hynix Inc. Дата публикации: 2024-03-28.

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Номер патента: US20200219879A1. Автор: SADAAKI Masuoka,Woo Cheol Shin,Myung Gil Kang,Sung Man WHANG,Sang Hoo LEE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-07-09.

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Номер патента: US20240096894A1. Автор: SADAAKI Masuoka,Sang Hoon Lee,Woo Cheol Shin,Myung Gil Kang,Sung Man WHANG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-03-21.

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Номер патента: US20220406779A1. Автор: SADAAKI Masuoka,Sang Hoon Lee,Woo Cheol Shin,Myung Gil Kang,Sung Man WHANG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-12-22.

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Номер патента: US20030122222A1. Автор: Ichiro Omura,Hitoshi Kobayashi,Masakazu Yamaguchi,Hideki Okumura,Wataru Saito,Akihiko Osawa,Masanobu Tsuchitani. Владелец: Individual. Дата публикации: 2003-07-03.

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Номер патента: US20240128226A1. Автор: Paul Frank,Frank Wagner,Sven Schmidbauer,Oliver Schilling,Thomas Heinelt. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2024-04-18.

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Номер патента: US20210005620A1. Автор: Junhyoung Kim,Jisung Cheon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-01-07.

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Номер патента: EP4401135A1. Автор: Sunghyun Hwang,Kiseong Jeon,Minwoo Lee,Mihee Heo,Byungjun Kang,Junho Sung,Hyungjo PARK. Владелец: LG ELECTRONICS INC. Дата публикации: 2024-07-17.

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Номер патента: EP1947685A2. Автор: Takashi Akahori,Akira Suzuku. Владелец: Tokyo Electron Ltd. Дата публикации: 2008-07-23.

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Номер патента: US20090073736A1. Автор: Min-Hee Cho,Seung-Bae Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2009-03-19.

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Номер патента: US20160343631A1. Автор: Kevin Matocha,Sujit Banerjee,Kiran CHATTY,John Nowak. Владелец: Monolith Semiconductor Inc. Дата публикации: 2016-11-24.

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Номер патента: US11799017B2. Автор: Chun-Sheng Liang,Hsin-Che Chiang,Kuo-Hua Pan,Wei-Chih Kao,Yu-San Chien. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-10-24.

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Номер патента: US20230369465A1. Автор: Chun-Sheng Liang,Hsin-Che Chiang,Kuo-Hua Pan,Wei-Chih Kao,Yu-San Chien. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-16.

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Номер патента: US20010038122A1. Автор: Masaru Saito,Kazuo Matsuzaki,Akio Kitamura,Naoto Fujishima,Gen Tada. Владелец: Fuji Electric Co Ltd. Дата публикации: 2001-11-08.

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Номер патента: US9397056B2. Автор: Chen-Hua Yu,Hao-Yi Tsai,Chao-Wen Shih,Mirng-Ji Lii,Yen-Ping Wang,Shih-Wei Liang,Tsung-Yuan Yu,Yung-Ping Chiang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-07-19.

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Номер патента: US11315845B2. Автор: Kevin Matocha,Sujit Banerjee,Kiran CHATTY,John Nowak. Владелец: Monolith Semiconductor Inc. Дата публикации: 2022-04-26.

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Номер патента: US7195980B2. Автор: Masaru Saito,Kazuo Matsuzaki,Akio Kitamura,Naoto Fujishima,Gen Tada. Владелец: Fuji Electric Co Ltd. Дата публикации: 2007-03-27.

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Номер патента: US8687980B2. Автор: Lon Wang,Tz Shiuan PENG. Владелец: National Taiwan University NTU. Дата публикации: 2014-04-01.

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Номер патента: US20130188958A1. Автор: Lon Wang,Tz Shiuan PENG. Владелец: National Taiwan University NTU. Дата публикации: 2013-07-25.

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Номер патента: US20020094610A1. Автор: Makoto Yoshida,Hiroyuki Enomoto,Hiroyuki Maruyama. Владелец: HITACHI LTD. Дата публикации: 2002-07-18.

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Номер патента: US20030045065A1. Автор: Makoto Yoshida,Hiroyuki Enomoto,Hiroyuki Maruyama. Владелец: HITACHI LTD. Дата публикации: 2003-03-06.

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Номер патента: MY165350A. Автор: KATAOKA Makoto,Hayashishita Eiji,Saimoto Yoshihisa,Ozaki Katsutoshi,Sakai Mitsuru. Владелец: Mitsui Chemicals Tohcello Inc. Дата публикации: 2018-03-21.

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Номер патента: US11532550B2. Автор: Chih-Hao Wang,Chia-Hao Chang,Cheng-Chi Chuang,Yu-Ming Lin,Chun-Yuan Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-12-20.

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Номер патента: US8053895B2. Автор: Dong Ha JUNG,Seung Jin Yeom,Nam Yeal Lee,Baek Mann Kim. Владелец: Hynix Semiconductor Inc. Дата публикации: 2011-11-08.

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Номер патента: US20220020711A1. Автор: Yen-Jui Chu,Jin-Neng Wu. Владелец: Winbond Electronics Corp. Дата публикации: 2022-01-20.

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Номер патента: US20080079068A1. Автор: Kyung Do Kim. Владелец: Hynix Semiconductor Inc. Дата публикации: 2008-04-03.

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Номер патента: US20240021671A1. Автор: HUI Zhang,Wenlong Zhou,Shiqiang Li,Kewei Tan,Susu KONG,Xiaoqing Du. Владелец: Dynax Semiconductor Inc. Дата публикации: 2024-01-18.

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Номер патента: US7825463B2. Автор: Kyung Do Kim. Владелец: Hynix Semiconductor Inc. Дата публикации: 2010-11-02.

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Номер патента: US20020079529A1. Автор: Takeshi Watanabe,Akira Hoshino,Masayuki Hamada,Mitsunari Sukekawa. Владелец: Individual. Дата публикации: 2002-06-27.

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Номер патента: US20040169223A1. Автор: Chan-Hyung Cho,Sung-Gyu Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2004-09-02.

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Номер патента: US09899866B2. Автор: Ramit VERMA. Владелец: Flash Electronics India Pvt Ltd. Дата публикации: 2018-02-20.

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Номер патента: US8507373B2. Автор: Hiroki Shirai. Владелец: Renesas Electronics Corp. Дата публикации: 2013-08-13.

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Номер патента: US20230260831A1. Автор: Shau-Lin Shue,Gary Liu,Shao-Kuan Lee,Cheng-Chin Lee,Hsin-Yen Huang,Ting-Ya Lo,Chi-Lin Teng,Cherng-Shiaw Tsai,Kuang-Wei Yang,Hsiao-Kang Chang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-08-17.

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Номер патента: US11769711B2. Автор: JUNG Yong Chae,Jin Hee Cho. Владелец: SK hynix Inc. Дата публикации: 2023-09-26.

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Номер патента: US20230411249A1. Автор: JUNG Yong Chae,Jin Hee Cho. Владелец: SK hynix Inc. Дата публикации: 2023-12-21.

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Номер патента: US20120091502A1. Автор: Masatoshi Goto,Shinichi Yataka. Владелец: Honda Motor Co Ltd. Дата публикации: 2012-04-19.

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Номер патента: US8530930B2. Автор: Masatoshi Goto,Shinichi Yataka. Владелец: Honda Motor Co Ltd. Дата публикации: 2013-09-10.

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Номер патента: US20230040514A1. Автор: Chia-Chen Chang,Cheng-Bo Shu,Yun-Chi Wu,Pei-Lun Wang,Jyun-Guan JHOU,Tsu-Hsiu Perng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-02-09.

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Номер патента: US20180158819A1. Автор: Kang-ill Seo,Dong-il Bae. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-06-07.

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Номер патента: EP4042485A1. Автор: Sei-Hyung Ryu. Владелец: Wolfspeed Inc. Дата публикации: 2022-08-17.

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Номер патента: US20230411248A1. Автор: JUNG Yong Chae,Jin Hee Cho. Владелец: SK hynix Inc. Дата публикации: 2023-12-21.

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Номер патента: US20220384637A1. Автор: Chia-Chen Chang,Cheng-Bo Shu,Yun-Chi Wu,Pei-Lun Wang,Jyun-Guan JHOU,Tsu-Hsiu Perng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-12-01.

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Номер патента: US11990545B2. Автор: Chia-Chen Chang,Cheng-Bo Shu,Yun-Chi Wu,Pei-Lun Wang,Jyun-Guan JHOU,Tsu-Hsiu Perng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-05-21.

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Номер патента: US11937431B2. Автор: SANGHOON Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-03-19.

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Номер патента: GB2628552A. Автор: Haruna Waters Imhasly Nathan,Richard Bates Jack,Thomas Coomber Richard,Thomas Ridley Pattison James. Владелец: Dyson Technology Ltd. Дата публикации: 2024-10-02.

Optical writing device and image forming apparatus and method using the same

Номер патента: US20010021067A1. Автор: Koji Masuda. Владелец: Ricoh Co Ltd. Дата публикации: 2001-09-13.

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Номер патента: US20160087101A1. Автор: Nae-in Lee,Dong-Suk Shin,Young-Tak Kim,Chul-Woong Lee,Hoi-sung Chung. Владелец: Individual. Дата публикации: 2016-03-24.

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Номер патента: US20080217689A1. Автор: Jong-wook Lee,Yong-Hoon Son,Hye-Ran Choi. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2008-09-11.

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Номер патента: US09768300B2. Автор: Nae-in Lee,Dong-Suk Shin,Pan-Kwi Park,Hyun-Chul Kang,Young-Tak Kim,Chul-Woong Lee,Dong-hyun Roh,Hoi-sung Chung,Geo-Myung SHIN. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-09-19.

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Номер патента: US09741855B2. Автор: Nae-in Lee,Dong-Suk Shin,Young-Tak Kim,Chul-Woong Lee,Hoi-sung Chung. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-08-22.

Method for manufacturing a semiconductor light-emitting device and semiconductor light-emitting device

Номер патента: US20090090923A1. Автор: Masahiro Murayama. Владелец: ROHM CO LTD. Дата публикации: 2009-04-09.

Methods of fabricating a capacitor and semiconductor device

Номер патента: US20230107346A1. Автор: Hyunjun Kim,Yukyung Shin,Cheoljin Cho,Changhwa JUNG,Jongbeom SEO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-04-06.

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Номер патента: WO2024100612A1. Автор: Silvestro Micera,Andre Clerc,Solaiman Shokur,Outman Akouissi,Francesco Iberite,Jonathan Muheim. Владелец: Scuola Superiore Di Studi Universitari E Di Perfezionamento Sant'anna. Дата публикации: 2024-05-16.

Semiconductor devices having contact plugs and local interconnects and methods for making the same

Номер патента: US20020182846A1. Автор: Daniel Smith,Sanh Tang,Jason Taylor. Владелец: Micron Technology Inc. Дата публикации: 2002-12-05.

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Номер патента: US20020182803A1. Автор: Daniel Smith,Sanh Tang,Jason Taylor. Владелец: Micron Technology Inc. Дата публикации: 2002-12-05.

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Номер патента: US20240255110A1. Автор: Michael Miskin. Владелец: Lynk Labs Inc. Дата публикации: 2024-08-01.

Electrically operated control device and system for an appliance and method of operating the same

Номер патента: US5652691A. Автор: Daniel L. Fowler. Владелец: Robertshaw Controls Co. Дата публикации: 1997-07-29.

Conductive paste and electronic device and solar cell including an electrode formed using the conductive paste

Номер патента: WO2013070049A1. Автор: Eun Sung Lee,Sang Soo Jee,Se Yun Kim,Suk Jun Kim,Jeong Na HEO. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2013-05-16.

Conductive paste and electronic device and solar cell including an electrode formed using the conductive paste

Номер патента: US09947809B2. Автор: Eun Sung Lee,Sang Soo Jee,Se Yun Kim,Suk Jun Kim,Jeong Na HEO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-04-17.

Crystal forming devices and systems and methods for making and using the same

Номер патента: EP1730489A2. Автор: Robert Grossman,Marc Unger,Phillip Lam,Hou-Pu Chou,Jake Kimball,Martin Pieprzyk. Владелец: Fluidigm Corp. Дата публикации: 2006-12-13.

Method for fabricating improved complementary metal oxide semiconductor devices

Номер патента: CA1166361A. Автор: Robert F. Pfeifer,Murray L. Trudel. Владелец: NCR Corp. Дата публикации: 1984-04-24.

Light emitting device, and electronic apparatus and inspection method using said light emitting device

Номер патента: US20220233063A1. Автор: Takeshi Abe,Mitsuru Nitta,Shozo Oshio. Владелец: Panasonic Intellectual Property Management Co Ltd. Дата публикации: 2022-07-28.

Broadcast signal frame generation device and broadcast signal frame generation method using bootstrap including symbol for signaling BICM mode of preamble and OFDM parameter together

Номер патента: US10506297B2. Автор: Jae-Young Lee,Sung-Ik Park,Sun-Hyoung Kwon,Heung-Mook Kim. Владелец: Electronics and Telecommunications Research Institute ETRI. Дата публикации: 2019-12-10.

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Номер патента: US20200059701A1. Автор: Jae-Young Lee,Sung-Ik Park,Sun-Hyoung Kwon,Heung-Mook Kim. Владелец: Electronics and Telecommunications Research Institute ETRI. Дата публикации: 2020-02-20.

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Номер патента: US20180054654A1. Автор: Jae-Young Lee,Sung-Ik Park,Sun-Hyoung Kwon,Heung-Mook Kim. Владелец: Electronics and Telecommunications Research Institute ETRI. Дата публикации: 2018-02-22.

Semiconductor device with air gaps between metal gates and method of forming the same

Номер патента: US11756835B2. Автор: Xusheng Wu,Chang-Miao Liu,Wei-Lun Min. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-09-12.

Uv-resistant biological devices and extracts and methods for producing and using the same

Номер патента: US20200080093A1. Автор: Raul CUERO RENGIFO. Владелец: Biocapital Holdings LLC. Дата публикации: 2020-03-12.

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Номер патента: US20230347348A1. Автор: WEI Liu,XING Chen,Yuan Wang,Yikun LIU,Liqiang Zou. Владелец: Nanchang University. Дата публикации: 2023-11-02.

Method for forming a semiconductor light-emitting device and a semiconductor light-emitting device

Номер патента: US20090001408A1. Автор: Atsushi Matsumura,Tomokazu Katsuyama. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2009-01-01.

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Номер патента: US20230369128A1. Автор: Xusheng Wu,Chang-Miao Liu,Wei-Lun Min. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-16.

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Номер патента: CA3065377A1. Автор: Jae-Young Lee,Sung-Ik Park,Sun-Hyoung Kwon,Heung-Mook Kim. Владелец: Electronics and Telecommunications Research Institute ETRI. Дата публикации: 2016-09-22.

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Номер патента: EP4374779A1. Автор: So Young Lee,Sang Kyu Kim,Sungho Kim,Bok Soon Kwon,Ho Taik LEE,Hong Soon RHEE,KyeongHa KWON,Chulyoon JUNG,Do Yun Park,Young Min SIM. Владелец: Korea Advanced Institute of Science and Technology KAIST. Дата публикации: 2024-05-29.

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Номер патента: US20240172947A1. Автор: So Young Lee,Sang Kyu Kim,Sungho Kim,Bok Soon Kwon,Ho Taik LEE,Hong Soon RHEE,KyeongHa KWON,Chulyoon JUNG,Do Yun Park,Young Min SIM. Владелец: Korea Advanced Institute of Science and Technology KAIST. Дата публикации: 2024-05-30.

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Номер патента: US20220344216A1. Автор: Xusheng Wu,Chang-Miao Liu,Wei-Lun Min. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-10-27.

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Номер патента: US20240209380A1. Автор: Raul CUERO RENGIFO. Владелец: Biocapital Holdings LLC. Дата публикации: 2024-06-27.

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Номер патента: US20230038597A1. Автор: Soo Youn Kim,Se Hoon Jeong,Hee Jun Yang,Seung Ho Yoon. Владелец: Samsung Display Co Ltd. Дата публикации: 2023-02-09.

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Номер патента: US10381603B2. Автор: JI Li,Lisen Wang,Tingting Zhao,Zhaozhe Xu. Владелец: Hefei BOE Optoelectronics Technology Co Ltd. Дата публикации: 2019-08-13.

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Номер патента: US20180233705A1. Автор: JI Li,Lisen Wang,Tingting Zhao,Zhaozhe Xu. Владелец: Hefei BOE Optoelectronics Technology Co Ltd. Дата публикации: 2018-08-16.

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Номер патента: US20160148930A1. Автор: Nae-in Lee,Dong-Suk Shin,Pan-Kwi Park,Hyun-Chul Kang,Young-Tak Kim,Chul-Woong Lee,Dong-hyun Roh,Hoi-sung Chung,Geo-Myung SHIN. Владелец: Individual. Дата публикации: 2016-05-26.

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Номер патента: US20150214329A1. Автор: Nae-in Lee,Dong-Suk Shin,Pan-Kwi Park,Hyun-Chul Kang,Young-Tak Kim,Chul-Woong Lee,Dong-hyun Roh,Hoi-sung Chung,Geo-Myung SHIN. Владелец: Individual. Дата публикации: 2015-07-30.

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Номер патента: US20160064565A1. Автор: Nae-in Lee,Dong-Suk Shin,Young-Tak Kim,Chul-Woong Lee,Hoi-sung Chung. Владелец: Individual. Дата публикации: 2016-03-03.

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Номер патента: US20100117151A1. Автор: Jyi-Tsong Lin,Po-Hsieh Lin,Yi-Chuen Eng. Владелец: National Sun Yat Sen University. Дата публикации: 2010-05-13.

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Номер патента: US20160079424A1. Автор: Nae-in Lee,Dong-Suk Shin,Young-Tak Kim,Chul-Woong Lee,Hoi-sung Chung. Владелец: Individual. Дата публикации: 2016-03-17.

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Номер патента: US20230290836A1. Автор: Yosuke Hata. Владелец: ROHM CO LTD. Дата публикации: 2023-09-14.

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Номер патента: US20240138156A1. Автор: Han-Jong Chia. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-04-25.

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Номер патента: CA3047935C. Автор: Harry George Yaworski,Edward O'Sullivan,George W. Pullium, Iii,Mahmoud K. Seraj. Владелец: Tyco Electronics Corp. Дата публикации: 2021-10-19.

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Номер патента: EP4368150A1. Автор: Silvestro Micera,Andre Clerc,Solaiman Shokur,Outman Akouissi,Francesco Iberite,Jonathan Muheim. Владелец: Scuola Superiore di Studi Universitari e di Perfezionamento SantAnna. Дата публикации: 2024-05-15.

Conductive paste and electronic device and solar cell including an electrode formed using the conductive paste

Номер патента: US20180019350A9. Автор: Eun Sung Lee,Sang Soo Jee,Se Yun Kim,Suk Jun Kim,Jeong Na HEO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-01-18.

Conductive paste and electronic device and solar cell including an electrode formed using the conductive paste

Номер патента: EP2777049A1. Автор: Eun Sung Lee,Sang Soo Jee,Se Yun Kim,Suk Jun Kim,Jeong Na HEO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2014-09-17.

Apparatus for fabricating a semiconductor device and method of fabricating a semiconductor device using the same

Номер патента: US20080057734A1. Автор: Dae Young Kim. Владелец: Dongbu HitekCo Ltd. Дата публикации: 2008-03-06.

High voltage semiconductor device and method for fabricating the same

Номер патента: US20150054071A1. Автор: Chung-Ren Lao,Cheng-Yi Hsieh,Chu-Feng CHEN,Wei-Chun CHOU,Yi-Hung Chiu. Владелец: Vanguard International Semiconductor Corp. Дата публикации: 2015-02-26.

Method for fabricating silicon carbide semiconductor device and power conversion device using the silicon carbide semiconductor device

Номер патента: US12131906B2. Автор: Shiro Hino,Koji Sadamatsu. Владелец: Mitsubishi Electric Corp. Дата публикации: 2024-10-29.

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Номер патента: US20010023989A1. Автор: Milind Weling,Rao Annapragada. Владелец: Philips Electronics North America Corp. Дата публикации: 2001-09-27.

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Номер патента: US20090045419A1. Автор: Tzong-Liang Tsai. Владелец: Huga Optotech Inc. Дата публикации: 2009-02-19.

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Номер патента: US20240266256A1. Автор: Sangmoon Lee,Jinbum Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-08-08.

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Номер патента: US09947708B2. Автор: Hiroaki Sekikawa. Владелец: Renesas Electronics Corp. Дата публикации: 2018-04-17.

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Номер патента: US20240242965A1. Автор: Jaewon Kim,Minsu Kim,Taehoon Kim,Hyeonjin Shin,Taejin CHOI,Hyeonsuk Shin,Van Luan NGUYEN. Владелец: UNIST Academy Industry Research Corp. Дата публикации: 2024-07-18.

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Номер патента: EP1505698B1. Автор: Won-seok Lee,Joon-seop Kwak,Kyoung-ho Ha,Ho-sun Paek,Sung-nam Lee,Tan B-502 Stbobo 2-cha Sakong. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2009-09-09.

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Номер патента: TWI274381B. Автор: Wu-An Weng. Владелец: Macronix Int Co Ltd. Дата публикации: 2007-02-21.

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Номер патента: US20240306396A1. Автор: Huilong Zhu,Weixing Huang. Владелец: Institute Of Microelectronics Chinese Academy Sciences. Дата публикации: 2024-09-12.

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Номер патента: EP4434730A1. Автор: Do Jae Kim. Владелец: LG Energy Solution Ltd. Дата публикации: 2024-09-25.

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Номер патента: US20130161630A1. Автор: Kenichirou Nishida. Владелец: Panasonic Corp. Дата публикации: 2013-06-27.

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Номер патента: US20240372009A1. Автор: Huilong Zhu. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2024-11-07.

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Номер патента: US09660163B2. Автор: Tae-hyung Kim,Cheol-soo Sone,Si-Hyuk Lee,Sang-Yeob Song,Hak-Hwan Kim,Jong-in Yang,Jin-Hyun Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-05-23.

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Номер патента: US20240234637A1. Автор: Wen-Hsiung LU,Ming-Da Cheng,Mirng-Ji Lii,Chen-En Yen,Chin-Wei Kang,Cheng-Jen Lin,Chang-Jung Hsueh. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-11.

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Номер патента: US12107201B2. Автор: Seung Ho Baek,Soo Kun Jeon,Won Jae Choi,Yeon Ho Jeong,Geun Mo JIN,Geon Il HONG. Владелец: Lumens Co Ltd. Дата публикации: 2024-10-01.

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Номер патента: US09821303B2. Автор: Su Kang Bae,Jung Kyu Kim,Jong Hyeok Park,Dong Ick SON,Gee Woo CHANG. Владелец: Korea Advanced Institute of Science and Technology KAIST. Дата публикации: 2017-11-21.

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Номер патента: EP4057349A1. Автор: Jaechul Park,Sanghun Jeon,Youngkwan Cha. Владелец: Korea Advanced Institute of Science and Technology KAIST. Дата публикации: 2022-09-14.

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Номер патента: WO2009017338A2. Автор: Ho Sang Yoon,Sang Kyun SHIM. Владелец: LG INNOTEK CO., LTD. Дата публикации: 2009-02-05.

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Номер патента: US20230275128A1. Автор: Sangwoo Kim,Taehyeong Kim,Minsu Seol,Kyung-Eun Byun,Minseok SHIN,JunYoung KWON,Jaehwan Jung,Pin Zhao. Владелец: Sungkyunkwan University Research and Business Foundation. Дата публикации: 2023-08-31.

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Номер патента: US20240249999A1. Автор: Chih-Hang Tung,Chung-Jung Wu,Tung-Liang Shao,Sheng-Tsung HSIAO,Jen Yu Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-25.

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Номер патента: US20220310482A1. Автор: Chih-Hang Tung,Chung-Jung Wu,Tung-Liang Shao,Sheng-Tsung HSIAO,Jen Yu Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-09-29.

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Номер патента: RU2544887C2. Автор: Хидео КОБАЯСИ,Масанори ОГУРА,Тецунобу КОТИ,Масаси КИТАНИ. Владелец: Кэнон Кабусики Кайся. Дата публикации: 2015-03-20.

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Номер патента: US11404329B2. Автор: Pei Chen,Fei Qin,Shuai ZHAO,Tong An,Lixiang ZHANG,Yanwei Dai. Владелец: BEIJING UNIVERSITY OF TECHNOLOGY. Дата публикации: 2022-08-02.

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Номер патента: US20210407863A1. Автор: Pei Chen,Fei Qin,Shuai ZHAO,Tong An,Lixiang ZHANG,Yanwei Dai. Владелец: BEIJING UNIVERSITY OF TECHNOLOGY. Дата публикации: 2021-12-30.

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Номер патента: US09975406B2. Автор: Jae Ho Kim,Ji Yong Park,Yong Jun Jee,Ki Hong Kim,Sung Je Lee,Kwang Il Kim,Dong Suk Lee,Hong Young LIM,Hwan Myeong Jung. Владелец: Hanon Systems Corp. Дата публикации: 2018-05-22.

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Номер патента: US09947546B2. Автор: Keun Kyu Kong,Min Seok Son,Jae Hee SIM,Jeong Hoon AN. Владелец: SK hynix Inc. Дата публикации: 2018-04-17.

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Номер патента: US09881904B2. Автор: Rabindra N. Das,Mark A. Gouker,Leonard M. Johnson,Pascale GOUKER,Ryan C. JOHNSON. Владелец: Massachusetts Institute of Technology. Дата публикации: 2018-01-30.

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Номер патента: US09793296B2. Автор: Yu-Ming Lin,Cheng-Tung Huang,Yi-Ting Wu,Jen-Yu Wang,Wen-Yin Weng,Ya-Ru Yang. Владелец: United Microelectronics Corp. Дата публикации: 2017-10-17.

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Номер патента: US11967666B2. Автор: Andreas Waag,Sönke Fündling,Frederik Steib. Владелец: Technische Universitaet Braunschweig Korperschaft Des Offentlichen Rechts. Дата публикации: 2024-04-23.

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Номер патента: US20160190439A1. Автор: Se Ho LEE,Hae Chan PARK,Sang Chul Oh. Владелец: SK hynix Inc. Дата публикации: 2016-06-30.

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Номер патента: US20110278538A1. Автор: Yu Seung Kim,Jung Ja YANG,Youn Joon Sung,Hyung Duk KO,Soo Jin Jung,Dae Cheon KIM,Byung Kwun LEE. Владелец: Lee Byung Kwun. Дата публикации: 2011-11-17.

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Номер патента: US6180471B1. Автор: Gary Hong,Peter Chang,Joe Ko. Владелец: United Semiconductor Corp. Дата публикации: 2001-01-30.

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Номер патента: US12057478B2. Автор: Chung-Liang Cheng,Yen-Yu Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-06.

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Номер патента: US20100203700A1. Автор: Eunkee Hong,Deok-Young Jung,Ju-seon Goo,Kyungmun Byun. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2010-08-12.

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Номер патента: US09978684B2. Автор: Changseop YOON,Boram IM,Hyung Jong Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-05-22.

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Номер патента: US20240332359A1. Автор: Chung-Liang Cheng,Yen-Yu Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-03.

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Номер патента: US20080023776A1. Автор: Allan Laser. Владелец: Micrel Inc. Дата публикации: 2008-01-31.

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Номер патента: WO2022214496A1. Автор: Jürgen Groll,Matthias RYMA. Владелец: JULIUS-MAXIMILIANS-UNIVERSITAT WURZBURG. Дата публикации: 2022-10-13.

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Номер патента: US20130098143A1. Автор: Mitsuyuki Kobayashi,Kousei TAKAGI. Владелец: Denso Corp. Дата публикации: 2013-04-25.

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Номер патента: US09794580B2. Автор: He-Yuan Lin. Владелец: MStar Semiconductor Inc Taiwan. Дата публикации: 2017-10-17.

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Номер патента: US20100240197A1. Автор: Jong-wook Lee,Young-Pil Kim,Si-Young Choi,Byeong-Chan Lee,Jin-Bum Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2010-09-23.

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Номер патента: US20080105930A1. Автор: Jong-wook Lee,Young-Pil Kim,Si-Young Choi,Byeong-Chan Lee,Jin-Bum Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2008-05-08.

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Номер патента: US20030057521A1. Автор: Fumihiko Hirose. Владелец: Mitsubishi Heavy Industries Ltd. Дата публикации: 2003-03-27.

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Номер патента: US20220015492A1. Автор: Chang-Hsien Ho. Владелец: Individual. Дата публикации: 2022-01-20.

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Номер патента: US10533780B2. Автор: Kyoung Soo Yi,Ock Kyun OH,Se Hwan LIM. Владелец: Tegway Co Ltd. Дата публикации: 2020-01-14.

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Номер патента: US20240282627A1. Автор: Huang-Lin Chao,Chung-Liang Cheng,Peng-Soon Lim. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-22.

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Номер патента: US20240304717A1. Автор: Dong Fang,Kui Xiao. Владелец: CSMC Technologies Fab2 Co Ltd. Дата публикации: 2024-09-12.

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Номер патента: US09812429B2. Автор: Rabindra N. Das,Mark A. Gouker,Leonard M. Johnson,Pascale GOUKER,Ryan C. JOHNSON. Владелец: Massachusetts Institute of Technology. Дата публикации: 2017-11-07.

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Номер патента: US20130207122A1. Автор: Teng-Chun Tsai,Chun-Yuan Wu,Chih-Chien Liu,Chin-Fu Lin,Chin-Cheng Chien. Владелец: United Microelectronics Corp. Дата публикации: 2013-08-15.

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Номер патента: US20210043602A1. Автор: Qi Deng,Cong Zhang,Chin-Tien Chiu,Xuyi Yang. Владелец: Western Digital Technologies Inc. Дата публикации: 2021-02-11.

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Номер патента: US20080057654A1. Автор: Jihong Chen,Amitabh Jain,Srinivasan Chakravarthi,Eddie H. Breashears. Владелец: Texas Instruments Inc. Дата публикации: 2008-03-06.

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Номер патента: US8643088B2. Автор: Jin Won Park. Владелец: Hynix Semiconductor Inc. Дата публикации: 2014-02-04.

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Номер патента: US20120001255A1. Автор: Jin Won Park. Владелец: Hynix Semiconductor Inc. Дата публикации: 2012-01-05.

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Номер патента: US09972588B2. Автор: Katsuya Kato. Владелец: Mitsubishi Electric Corp. Дата публикации: 2018-05-15.

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Номер патента: US09721832B2. Автор: Alexander A. Ned,Sorin Stefanescu,Joseph R. VanDeWeert. Владелец: Kulite Semiconductor Products Inc. Дата публикации: 2017-08-01.

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Номер патента: US09709236B2. Автор: Shingo Kato. Владелец: Koito Manufacturing Co Ltd. Дата публикации: 2017-07-18.

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Номер патента: US5846877A. Автор: Jun-Ki Kim. Владелец: LG Semicon Co Ltd. Дата публикации: 1998-12-08.

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Номер патента: US20140191792A1. Автор: Cheng-Chi Lin,Ching-Lin Chan,Shih-Chin Lien,Chen-Yuan Lin. Владелец: Macronix International Co Ltd. Дата публикации: 2014-07-10.

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Номер патента: US6835999B2. Автор: Fumio Sato,Mitsuhiro Omura. Владелец: Toshiba Corp. Дата публикации: 2004-12-28.

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Номер патента: US20040012073A1. Автор: Fumio Sato,Mitsuhiro Omura. Владелец: Individual. Дата публикации: 2004-01-22.

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Номер патента: US20230402568A1. Автор: Min Ji JO,Duk Kyu Bae. Владелец: HEXASOLUTION Co Ltd. Дата публикации: 2023-12-14.

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Номер патента: US20230255502A1. Автор: Hyeon Jun Lee,Bo Ram CHOI,Gyeong Ub MOON,Jong Yeop AN. Владелец: Samsung Display Co Ltd. Дата публикации: 2023-08-17.

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Номер патента: US20130168601A1. Автор: Hideaki Sasaki,Takehiro Noguchi,Makiko Uehara. Владелец: NEC Corp. Дата публикации: 2013-07-04.

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Номер патента: US20140131874A1. Автор: Naoki Komai,Yoshihisa Kagawa. Владелец: Sony Corp. Дата публикации: 2014-05-15.

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Номер патента: US20080278279A1. Автор: Chih-Feng Huang,Chiu-Chih Chiang. Владелец: System General Corp Taiwan. Дата публикации: 2008-11-13.

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Номер патента: US20030184118A1. Автор: Yasuhiro Suzuki,Osamu Sano. Владелец: Yazaki Corp. Дата публикации: 2003-10-02.

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Номер патента: US20150357377A1. Автор: Hae Chan PARK. Владелец: SK hynix Inc. Дата публикации: 2015-12-10.

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Номер патента: US20090293827A1. Автор: Kazuo Iwata,Jun Tominaga,Noritoshi Takamura,Norihiro Tajima,Takeshi Yabushita. Владелец: NHK Spring Co Ltd. Дата публикации: 2009-12-03.

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Номер патента: US09958145B2. Автор: Morteza Safai,Keith D. Humfeld. Владелец: Boeing Co. Дата публикации: 2018-05-01.

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Номер патента: US09843035B2. Автор: Wang Mo JUNG,Hong Kyu Park,Chi Ho Jo,Hyun Kuk Noh,Ji Hoon Ryu,Sang Seung Oh. Владелец: LG Chem Ltd. Дата публикации: 2017-12-12.

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Номер патента: US09640587B2. Автор: Kang Sik Choi. Владелец: SK hynix Inc. Дата публикации: 2017-05-02.

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Номер патента: US9905512B2. Автор: Yukio Maki,Toshifumi Iwasaki. Владелец: Renesas Electronics Corp. Дата публикации: 2018-02-27.

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Номер патента: US20160276270A1. Автор: Yukio Maki,Toshifumi Iwasaki. Владелец: Renesas Electronics Corp. Дата публикации: 2016-09-22.

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Номер патента: US20220189853A1. Автор: Huilong Zhu. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2022-06-16.

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Номер патента: US20050098832A1. Автор: Kazuhiro Yoshida. Владелец: Murata Manufacturing Co Ltd. Дата публикации: 2005-05-12.

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Номер патента: US20120025250A1. Автор: Min-Hsun Hsieh,Chien-Yuan Wang,Wei-Yu Chen,Chiu-Lin Yao,Li-Ming Chang. Владелец: Epistar Corp. Дата публикации: 2012-02-02.

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Номер патента: US20240228102A1. Автор: Cheryl LOHMAN. Владелец: Kystbox Inc. Дата публикации: 2024-07-11.

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Номер патента: US20030020183A1. Автор: Jin Bai. Владелец: Individual. Дата публикации: 2003-01-30.

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Номер патента: US20040036182A1. Автор: Jerry Brooks,David Corisis,Matt Schwab,Tracy Reynolds. Владелец: Brooks Jerry M.. Дата публикации: 2004-02-26.

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Номер патента: US7087956B2. Автор: Taku Umebayashi. Владелец: Sony Corp. Дата публикации: 2006-08-08.

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Номер патента: US20050249253A1. Автор: Jonathan Heffernan,Valerie Bousquet,Stewart Hooper,Matthias Kauer,Katherine Johnson. Владелец: Individual. Дата публикации: 2005-11-10.

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Номер патента: CA2021671C. Автор: Denis Jaume,Andre Peyre Lavigne,Georges Charitat. Владелец: Motorola Semiconducteurs SA. Дата публикации: 1993-11-02.

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Номер патента: NL2022578A. Автор: Nishimura Hideki,SHINOTAKE Yohei,NAKAGAWA Masao,Kuwano Ryoji. Владелец: Shindengen Electric Mfg. Дата публикации: 2019-08-29.

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Номер патента: US20170062447A1. Автор: Hiroki Mukai. Владелец: Renesas Electronics Corp. Дата публикации: 2017-03-02.

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Номер патента: US20170317094A1. Автор: Hiroki Mukai. Владелец: Renesas Electronics Corp. Дата публикации: 2017-11-02.

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Номер патента: US9735166B2. Автор: Hiroki Mukai. Владелец: Renesas Electronics Corp. Дата публикации: 2017-08-15.

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Номер патента: US10056396B2. Автор: Hiroki Mukai. Владелец: Renesas Electronics Corp. Дата публикации: 2018-08-21.

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Номер патента: US20200031076A1. Автор: JIANG Qian,Michael A. Vail,Debkumar MUKHOPADHYAY,Kenneth E. Bertagnolli,Mark P. Chapman,Jason K. Wiggins,Arnold D. Cooper,Amy Leigh Rodriguez,Stephen Rudger Adams. Владелец: US Synthetic Corp. Дата публикации: 2020-01-30.

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Номер патента: US20080210976A1. Автор: Kaiping Liu. Владелец: Texas Instruments Inc. Дата публикации: 2008-09-04.

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Номер патента: US11996351B2. Автор: Chih-Hang Tung,Chung-Jung Wu,Tung-Liang Shao,Sheng-Tsung HSIAO,Jen Yu Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-05-28.

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Номер патента: US20220285401A1. Автор: Jaechul Park,Sanghun Jeon,Youngkwan Cha. Владелец: Korea Advanced Institute of Science and Technology KAIST. Дата публикации: 2022-09-08.

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Номер патента: US20220037231A1. Автор: Chih-Hang Tung,Chung-Jung Wu,Tung-Liang Shao,Sheng-Tsung HSIAO,Jen Yu Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-02-03.

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Номер патента: US20200020627A1. Автор: Chen-Hua Yu,Chuei-Tang Wang,Chung-Hao Tsai,Wei-Ting Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-01-16.

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Номер патента: KR100695868B1. Автор: 이윤성. Владелец: 삼성전자주식회사. Дата публикации: 2007-03-19.

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Номер патента: US7989820B2. Автор: Sang Youl Lee. Владелец: LG Innotek Co Ltd. Дата публикации: 2011-08-02.

Multi-layer semiconductor devices fabricated using a combination of substrate and via structures and fabrication techniques

Номер патента: WO2016118209A3. Автор: Rabindra N. Das,Mark A. Gouker,Leonard M. Johnson,Pascale GOUKER,Ryan C. JOHNSON. Владелец: Massachusetts Institute of Technology. Дата публикации: 2016-10-27.

Semiconductor device including square type storage node and method of manufacturing the same

Номер патента: US7183603B2. Автор: Je-min Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2007-02-27.

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Номер патента: EP2816614A1. Автор: Sang Youl Lee. Владелец: LG Innotek Co Ltd. Дата публикации: 2014-12-24.

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Номер патента: WO2009002040A3. Автор: Sang Youl Lee. Владелец: Sang Youl Lee. Дата публикации: 2009-02-26.

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Номер патента: EP2156478A1. Автор: Hyo Kun Son. Владелец: LG Innotek Co Ltd. Дата публикации: 2010-02-24.

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Номер патента: US20170207098A1. Автор: Keun Kyu Kong,Min Seok Son,Jae Hee SIM,Jeong Hoon AN. Владелец: SK hynix Inc. Дата публикации: 2017-07-20.

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Номер патента: US20230369456A1. Автор: Chih-Hao Wang,Kuo-Cheng Chiang,Zhi-Chang Lin,Jung-Hung CHANG,Shih-Cheng Chen,Tsung-Han CHUANG,Chien Ning Yao. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-16.

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Номер патента: US20110186812A1. Автор: Tae Yun Kim,Hyo Kun Son. Владелец: Hyo Kun Son. Дата публикации: 2011-08-04.

Preparation method for semiconductor device

Номер патента: US20220037211A1. Автор: Yuanbao LIAO. Владелец: CSMC Technologies Fab2 Co Ltd. Дата публикации: 2022-02-03.

Dopant profile control in gate structures for semiconductor devices

Номер патента: US20220336289A1. Автор: Chia-Ming Tsai,Chandrashekhar Prakash SAVANT,Tien-Wei YU. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-10-20.

Display device using semiconductor light emitting device and method for manufacturing the same

Номер патента: US20190326477A1. Автор: Junghoon Kim,Hyunwoo Cho,Changseo Park,Byoungkwon Cho,Bongchu Shim. Владелец: LG ELECTRONICS INC. Дата публикации: 2019-10-24.

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Номер патента: US20210391220A1. Автор: Chia-Ming Tsai,Chandrashekhar Prakash SAVANT,Tien-Wei YU. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-12-16.

Semiconductor light emitting device and method of manufacturing the same

Номер патента: WO2008143460A1. Автор: Hyo Kun Son. Владелец: LG INNOTEK CO., LTD. Дата публикации: 2008-11-27.

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Номер патента: EP2174358A2. Автор: Ho Sang Yoon,Sang Kyun SHIM. Владелец: LG Innotek Co Ltd. Дата публикации: 2010-04-14.

Method of fabricating a charge trap nand flash memory device

Номер патента: US20130087849A1. Автор: Marcello Mariani,Giulio Albini,Paolo Tessariol,Umberto M. Meotto,Paola Bacciaglia. Владелец: Micron Technology Inc. Дата публикации: 2013-04-11.

Method of manufacturing conductive pattern of a semiconductor device and method of manufacturing flash memory device using the same

Номер патента: KR100483843B1. Автор: 이창엽,권철순,이돈우. Владелец: 삼성전자주식회사. Дата публикации: 2005-04-19.

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Номер патента: RU2736560C1. Автор: Йосиюки НАКАГАВА,Акико ХАММУРА. Владелец: Кэнон Кабусики Кайся. Дата публикации: 2020-11-18.

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Номер патента: US5105251A. Автор: Tsuneo Nakayama. Владелец: Toshiba Corp. Дата публикации: 1992-04-14.

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Номер патента: US20180040768A1. Автор: Sung Jun Park,Chi-Yoon Lee,Young sub Shin,Shiyoung LEE,Sun Hyun OH,Kyoyoung AHN. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-02-08.

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Номер патента: EP4320218A1. Автор: Jürgen Groll,Matthias RYMA. Владелец: Julius Maximilians Universitaet Wuerzburg. Дата публикации: 2024-02-14.

Semiconductor nanocrystal particles of core-shell structure having specific bandgap relationship between the core and the shells, production methods thereof, and devices including the same

Номер патента: US11982018B2. Автор: Sung Woo Kim,Eun Joo Jang,Tae Hyung Kim,Yuho WON,Jeong Hee Lee,Jin A Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-05-14.

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Номер патента: US20240030182A1. Автор: Sunghyun Hwang,Wonjae Chang,Minwoo Lee,Chunghyun Lim,Myoungsoo Kim. Владелец: LG ELECTRONICS INC. Дата публикации: 2024-01-25.

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Номер патента: US20240322353A1. Автор: Yeon Chul Choo,Doo Seung KIM,II Suk Sim. Владелец: LG Energy Solution Ltd. Дата публикации: 2024-09-26.

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Номер патента: RU2395341C1. Автор: Масахиде МИУРА,Нобуюки ТАКАГИ,Тоситака ТАНАБЕ,Ясутака НАГАИ,Казухико ДОХМАЕ,Ясуо ИКЕДА,Михо ХАТАНАКА,Тосио ЯМАМОТО. Владелец: Тойота Дзидося Кабусики Кайся. Дата публикации: 2010-07-27.

Method for forming a semiconductor device and method for etching a processed object using the same

Номер патента: KR20050064209A. Автор: 박창헌. Владелец: 주식회사 하이닉스반도체. Дата публикации: 2005-06-29.

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Номер патента: US11569419B2. Автор: Wen-Hsiung LU,Ming-Da Cheng,Mirng-Ji Lii,Chen-En Yen,Chin-Wei Kang,Cheng-Jen Lin,Chang-Jung Hsueh. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-01-31.

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Номер патента: US11961944B2. Автор: Wen-Hsiung LU,Ming-Da Cheng,Mirng-Ji Lii,Chen-En Yen,Chin-Wei Kang,Cheng-Jen Lin,Chang-Jung Hsueh. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-04-16.

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Номер патента: US20220140197A1. Автор: Wen-Hsiung LU,Ming-Da Cheng,Mirng-Ji Lii,Chen-En Yen,Chin-Wei Kang,Cheng-Jen Lin,Chang-Jung Hsueh. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-05-05.

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Номер патента: US20150096489A1. Автор: Lee Byung-Chul,Park Jae-Seok,Lim Jae-Ha,Park Jin-Han,Kim Dong-Sul. Владелец: . Дата публикации: 2015-04-09.

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Номер патента: US20230317877A1. Автор: Liyang Zhang,Zhizhong Guo. Владелец: Enkris Semiconductor Inc. Дата публикации: 2023-10-05.

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Номер патента: US20170207376A1. Автор: Toshiyuki Sakai,Katsuya Sakayori,Satoru Kanke,Kei Amagai,Aki Kimura,Toshimasa TAKARABE,Makoto MIZOSHIRI. Владелец: DAI NIPPON PRINTING CO LTD. Дата публикации: 2017-07-20.

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Номер патента: US20240096842A1. Автор: Paul Frank,Ralf Otremba,Alexander Heinrich,Gregor Langer,Daniel PEDONE,Alexandra Ludsteck-Pechloff. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2024-03-21.

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Номер патента: US11984356B2. Автор: Huang-Lin Chao,Chung-Liang Cheng,Peng-Soon Lim. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-05-14.

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Номер патента: US11961766B2. Автор: Chung-Liang Cheng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-04-16.

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Номер патента: US10411174B2. Автор: Toshiyuki Sakai,Katsuya Sakayori,Satoru Kanke,Kei Amagai,Aki Kimura,Toshimasa TAKARABE,Makoto MIZOSHIRI. Владелец: DAI NIPPON PRINTING CO LTD. Дата публикации: 2019-09-10.

Semiconductor Devices with Uniform Gate Regions

Номер патента: US20230027676A1. Автор: Li-Te Lin,Wei-Lun Chen,Tze-Chung Lin,Chia-Chien Kuang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-01-26.

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Номер патента: US20220102218A1. Автор: Chung-Liang Cheng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-03-31.

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Номер патента: US20240213098A1. Автор: Chung-Liang Cheng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-06-27.

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Номер патента: US20230015886A1. Автор: Chung-Liang Cheng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-01-19.

A method for fabricating transistor of a semiconductor device

Номер патента: KR100359160B1. Автор: 최영호. Владелец: 주식회사 하이닉스반도체. Дата публикации: 2002-10-31.

Method for fabricating element isolating film of semiconductor device and structure of the same

Номер патента: KR100402100B1. Автор: 최세경. Владелец: 주식회사 하이닉스반도체. Дата публикации: 2003-10-17.

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Номер патента: CN1315179C. Автор: 伊藤贵之. Владелец: Toshiba Corp. Дата публикации: 2007-05-09.

Method for fabricating element isolating film of semiconductor device, and structure of the same

Номер патента: US20020160578A1. Автор: Se Choi. Владелец: Hynix Semiconductor Inc. Дата публикации: 2002-10-31.

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Номер патента: US20150139326A1. Автор: He-Yuan Lin. Владелец: MStar Semiconductor Inc Taiwan. Дата публикации: 2015-05-21.

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Номер патента: US20240227010A1. Автор: Jyunya Murai,Reimi YAMADA. Владелец: Toyota Motor Corp. Дата публикации: 2024-07-11.

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Номер патента: EP1256133A2. Автор: Christopher Kocon. Владелец: Fairchild Semiconductor Corp. Дата публикации: 2002-11-13.

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Номер патента: WO2001059848A2. Автор: Christopher Kocon. Владелец: INTERSIL CORPORATION. Дата публикации: 2001-08-16.

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Номер патента: US20210236879A1. Автор: Keiichi Sakai,Tomokazu Nasu,Naoji Sakai. Владелец: Nasyu Co Ltd. Дата публикации: 2021-08-05.

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Номер патента: WO2001049637A1. Автор: Per Sjoberg. Владелец: Nexplo Bofors AB. Дата публикации: 2001-07-12.

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Номер патента: US20070248435A1. Автор: Masami Hirotomi. Владелец: Mitsubishi Electric Corp. Дата публикации: 2007-10-25.

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Номер патента: TWM388629U. Автор: Siao-Yang Chen. Владелец: Apollo New Energy Corp. Дата публикации: 2010-09-11.

Waste separator scrap oil extraction device and method for producing recycled raw materials using the same

Номер патента: EP4066951B1. Автор: Sang Kil PYO. Владелец: Dtr Corp. Дата публикации: 2024-10-09.

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Номер патента: WO2024201175A1. Автор: Jack Bates,James PATTISON,Richard Coomber,Nathan IMHASLY. Владелец: Dyson Technology Limited. Дата публикации: 2024-10-03.

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Номер патента: US12063714B2. Автор: Jian Luo,Richard Stirling-Gallacher,Zhongfeng Li,Yilin LI. Владелец: Huawei Technologies Co Ltd. Дата публикации: 2024-08-13.

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Номер патента: US09967201B2. Автор: Dong Xu,Fu Wang,Pei Wu. Владелец: Huawei Technologies Co Ltd. Дата публикации: 2018-05-08.

A semiconductor optical amplifier device and a method of using the same

Номер патента: EP0542198A1. Автор: Jun C/O Canon Kabushiki Kaisha Nitta. Владелец: Canon Inc. Дата публикации: 1993-05-19.

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Номер патента: KR20030002595A. Автор: 심현숙. Владелец: 주식회사 하이닉스반도체. Дата публикации: 2003-01-09.

Spreading blade, unidirectional spreading device and bidirectional spreading device

Номер патента: EP3705053A1. Автор: Xiaomin Huang. Владелец: SHANGHAI REACH MEDICAL INSTRUMENT CO Ltd. Дата публикации: 2020-09-09.

Silicon carbide semiconductor devices having nitrogen-doped interface

Номер патента: US20140167073A1. Автор: Michael MacMillan. Владелец: GLOBAL POWER DEVICE CO. Дата публикации: 2014-06-19.

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Номер патента: US20190181335A1. Автор: Chang Soo Woo,Dong Yean Oh. Владелец: SK hynix Inc. Дата публикации: 2019-06-13.

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Номер патента: EP3943575A1. Автор: Kenji Ikeda,Masaki ODAWARA,Kazuhisa SHINNO,Shotaro NISHIKI,Tsuzumi HIGASHIYAMA. Владелец: Stanley Electric Co Ltd. Дата публикации: 2022-01-26.

Formation of stacked nanosheet semiconductor devices

Номер патента: US20200144122A1. Автор: Peng Xu,Kangguo Cheng,Heng Wu,Juntao Li. Владелец: International Business Machines Corp. Дата публикации: 2020-05-07.

Expanding blade, unidirectional expanding device and bidirectional expanding device

Номер патента: US11045180B2. Автор: Xiaomin Huang. Владелец: SHANGHAI REACH MEDICAL INSTRUMENT CO Ltd. Дата публикации: 2021-06-29.

Device and method for coating surfaces

Номер патента: AU2024219654A1. Автор: Xi Wang,Christopher Flaim,Michael Carl Junger,Neil Harris,Sasikaran KANDASAMY. Владелец: Vaxxas Pty Ltd. Дата публикации: 2024-10-03.

Intracorporeal occlusive device and method

Номер патента: US09788840B2. Автор: Michael Ross,Michael P. Marks. Владелец: Individual. Дата публикации: 2017-10-17.

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Номер патента: US20140264917A1. Автор: Chao-Yuan Huang,Yueh-Feng Ho,Ming-Sheng Yang,Hwi-Huang Chen. Владелец: IPEnval Consultant Inc. Дата публикации: 2014-09-18.

A semiconductor device having a high buck voltage and a method of manufacturing the same

Номер патента: KR970072199A. Автор: 아끼오 우에니시,가쯔미 나까무라. Владелец: 기따오까 다까시. Дата публикации: 1997-11-07.

A semiconductor device comprsing a connecting metal layer and a method of manufacturing the same

Номер патента: KR101148494B1. Автор: 이동준,이영관,김치성. Владелец: 삼성전기주식회사. Дата публикации: 2012-05-21.

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Номер патента: KR101501742B1. Автор: 심재관,이철로. Владелец: 전북대학교산학협력단. Дата публикации: 2015-03-12.

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Номер патента: EP0487937B1. Автор: Louis C. Parrillo,Neil B. Henis,Richard W. Mauntel. Владелец: Motorola Inc. Дата публикации: 1998-02-18.

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Номер патента: US20050059219A1. Автор: Hiroshi Tayanaka. Владелец: Sony Corp. Дата публикации: 2005-03-17.

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Номер патента: CA2635446C. Автор: Young Hak Moon. Владелец: Tai Wha Lease Industrial Co Ltd. Дата публикации: 2011-08-09.

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Номер патента: TW200633266A. Автор: Takashi Udagawa. Владелец: Showa Denko KK. Дата публикации: 2006-09-16.

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Номер патента: DE69532620D1. Автор: Satoru Yamada,Ayako Komori,Takahiro Mori,Ichiro Kataoka,Hidenori Shiotsuka. Владелец: Canon Inc. Дата публикации: 2004-04-08.

Electrospinning device for fabricating membrane by using spinnerets aligned in machine direction and transverse direction and method for using the same

Номер патента: US8827672B2. Автор: Haiyan Wang,Jianhua Cao,Dayong Wu. Владелец: SKPB MEMBRANE-TECH (BEIJING) Corp. Дата публикации: 2014-09-09.

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Номер патента: US5641973A. Автор: Keiichi Matsushita,Katsuyoshi Fukuda,Keitaro Shigenaka. Владелец: Toshiba Corp. Дата публикации: 1997-06-24.

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Номер патента: US20190336062A1. Автор: Donghyun Lee,Jaesung Lee,Jongmin Choi,Minho Park,WonSuk Choi,Daehyeong LIM,Keumsun CHOE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-11-07.

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Номер патента: US9099612B2. Автор: Min-Hsun Hsieh,Chien-Yuan Wang,Wei-Yu Chen,Chiu-Lin Yao,Li-Ming Chang. Владелец: Epistar Corp. Дата публикации: 2015-08-04.

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Номер патента: US20130160956A1. Автор: IKEDA Shigeo. Владелец: . Дата публикации: 2013-06-27.

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Номер патента: US20150139326A1. Автор: Lin He-Yuan. Владелец: . Дата публикации: 2015-05-21.

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Номер патента: CN101455951A. Автор: 佐藤秀树,小川弘之,上田博. Владелец: Sumitomo Chemical Co Ltd. Дата публикации: 2009-06-17.

Automatic wire stripping and crimping device and wire stripping and crimping method using the same

Номер патента: KR20210051010A. Автор: 조혁진. Владелец: 주식회사 영신전기. Дата публикации: 2021-05-10.

A method of manufacturing a semiconductor light emitting device and light emitting semiconductor device

Номер патента: DE102011016935A1. Автор: Richard Baisl,Dr. Engl Karl,Dr. Höppel Lutz,Sebastian Taeger,Dr. Gärtner Christian,Dr. Schlenker Tilman. Владелец: OSRAM Opto Semiconductors GmbH. Дата публикации: 2012-10-18.

Method for fabricating self-aligned semiconductor devices utilizing selectively etchable masking layers

Номер патента: US4135954A. Автор: Augustine W. Chang,Arun K. Gaind. Владелец: International Business Machines Corp. Дата публикации: 1979-01-23.

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Номер патента: KR101866943B1. Автор: 이재용,김혁주,임용훈,임태수. Владелец: 한국에너지기술연구원. Дата публикации: 2018-06-14.

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Номер патента: EP2302976B1. Автор: Yoshitaka Ohta,Hironori Nakae,Hiroshi Hayashino. Владелец: Panasonic Intellectual Property Management Co Ltd. Дата публикации: 2017-02-22.

Control device, terminal device, and communication system and communication method using the same

Номер патента: WO2010007739A1. Автор: 中江宏典,林野裕司,太田良隆. Владелец: パナソニック株式会社. Дата публикации: 2010-01-21.

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Номер патента: US20020185677A1. Автор: Davide Patti,Vittorio Privitera,Francesco Priolo,Giorgia Franzo. Владелец: STMICROELECTRONICS SRL. Дата публикации: 2002-12-12.

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Номер патента: US11804585B2. Автор: MinGu Kang,Hooyoung SONG,Bongseok Choi. Владелец: LG ELECTRONICS INC. Дата публикации: 2023-10-31.

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Номер патента: US20150028492A1. Автор: Kim Myoung Soo,JUNG Jin Ki. Владелец: SK HYNIX INC.. Дата публикации: 2015-01-29.

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Номер патента: US20170178989A1. Автор: Banerjee Sujit,Matocha Kevin,Nowak John,Chatty Kiran. Владелец: . Дата публикации: 2017-06-22.

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Номер патента: US20150214164A1. Автор: Banerjee Sujit,Matocha Kevin,Nowak John,Chatty Kiran. Владелец: . Дата публикации: 2015-07-30.

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Номер патента: US20140299887A1. Автор: Matocha Kevin,Chatty Kiran,Rowland Larry,Chatty Kalidas. Владелец: Monolith Semiconductor, Inc.. Дата публикации: 2014-10-09.

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Номер патента: US20160343631A1. Автор: Banerjee Sujit,Matocha Kevin,Nowak John,Chatty Kiran. Владелец: . Дата публикации: 2016-11-24.

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Номер патента: US20200328190A1. Автор: Liu Jun,CHENG Weihua. Владелец: . Дата публикации: 2020-10-15.

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Номер патента: KR101135163B1. Автор: 이복우. Владелец: 주식회사 세안이엔지. Дата публикации: 2012-04-16.

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Номер патента: KR100461329B1. Автор: 박성기,김상덕. Владелец: 주식회사 하이닉스반도체. Дата публикации: 2004-12-14.

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Номер патента: KR100461328B1. Автор: 김우진. Владелец: 주식회사 하이닉스반도체. Дата публикации: 2004-12-14.

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Номер патента: KR980006086A. Автор: 김영복. Владелец: 현대전자산업 주식회사. Дата публикации: 1998-03-30.

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Номер патента: US5557135A. Автор: Masayuki Hashimoto. Владелец: Nippon Steel Semiconductor Corp. Дата публикации: 1996-09-17.

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Номер патента: CA1052546A. Автор: Erhard A. Diener. Владелец: Individual. Дата публикации: 1979-04-17.

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Номер патента: JP2911078B2. Автор: 宏直 葛西,勝利 吉永. Владелец: MARIN GIKEN KK. Дата публикации: 1999-06-23.

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Номер патента: FR2639158A1. Автор: Kiyotaka Yamauchi,Osamu Shimoe,Noriyoshi Hirao,Shin Nakajima. Владелец: Hitachi Metals Ltd. Дата публикации: 1990-05-18.

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Номер патента: CN101652498A. Автор: 中河原均. Владелец: Canon Anelva Corp. Дата публикации: 2010-02-17.

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Номер патента: KR100320797B1. Автор: 신강섭,백인혁. Владелец: 박종섭. Дата публикации: 2002-06-20.

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Номер патента: US20010018259A1. Автор: Byung Lee. Владелец: Hyundai Electronics Industries Co Ltd. Дата публикации: 2001-08-30.

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Номер патента: KR100998441B1. Автор: 송길원. Владелец: 송길원. Дата публикации: 2010-12-07.

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Номер патента: US20040155326A1. Автор: Hatsuki Kanbayashi. Владелец: Seiko Epson Corp. Дата публикации: 2004-08-12.

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Номер патента: TW200818409A. Автор: Jun-Hyeub Sun. Владелец: Hynix Semiconductor Inc. Дата публикации: 2008-04-16.

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Номер патента: KR100832016B1. Автор: 이재영,이민석. Владелец: 주식회사 하이닉스반도체. Дата публикации: 2008-05-26.

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Номер патента: CN1145532A. Автор: 周文植,金荣福. Владелец: Hyundai Electronics Industries Co Ltd. Дата публикации: 1997-03-19.

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Номер патента: KR100382732B1. Автор: 김홍기. Владелец: 삼성전자주식회사. Дата публикации: 2003-05-09.

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Номер патента: GB190520819A. Автор: George Hudleston Hurlsto Hardy. Владелец: Individual. Дата публикации: 1907-01-10.

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Номер патента: US20120003787A1. Автор: TANAKA Tetsuhiro,KATO Erika. Владелец: . Дата публикации: 2012-01-05.

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Номер патента: US20120003810A1. Автор: . Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2012-01-05.

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Номер патента: US20120001226A1. Автор: . Владелец: Sanken Electric Co., Ltd.. Дата публикации: 2012-01-05.

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Номер патента: US20120003799A1. Автор: . Владелец: . Дата публикации: 2012-01-05.

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Номер патента: US20120003436A1. Автор: . Владелец: FUJIFILM Corporation. Дата публикации: 2012-01-05.

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Номер патента: JP2696962B2. Автор: 恭一 諏訪,茂 蛭川,博貴 立野. Владелец: Nikon Corp. Дата публикации: 1998-01-14.

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Номер патента: KR970018770A. Автор: 조성민. Владелец: 김광호. Дата публикации: 1997-04-30.

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