Memory devices with local and global devices at substantially the same level above stacked tiers of memory cells and methods.

Memory devices with local and global devices at substantially the same level above stacked tiers of memory cells and methods

Номер патента: US20150279432A1
Опубликовано: 01-10-2015
Автор(ы): Aaron S. Yip, Mark A. Helm, Ramin Ghodsi
Принадлежит: Micron Technology Inc
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Рисунок 1. Взаимосвязь патентов (ближайшие 20).

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Memory devices, methods of manufacturing the same, and methods of accessing the same

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