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Semiconductor devices and methods of manufacturing semiconductor devices

Номер патента: US11948933B2
Опубликовано: 02-04-2024
Автор(ы): Steven M. Etter, Yupeng Chen
Принадлежит: Semiconductor Components Industries LLC
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Номер патента: US09577058B2. Автор: Cem Basceri,Martin F. Schubert,Vladimir Odnoblyudov,Thomas Gehrke. Владелец: Micron Technology Inc. Дата публикации: 2017-02-21.

Method of manufacturing silicon carbide semiconductor device

Номер патента: US09941362B2. Автор: Masayuki Miyazaki,Hidenao Kuribayashi. Владелец: Fuji Electric Co Ltd. Дата публикации: 2018-04-10.

Method of making a charge compensation semiconductor device using direct bonding and corresponding device

Номер патента: EP1119871A1. Автор: Raymond J. Grover. Владелец: KONINKLIJKE PHILIPS ELECTRONICS NV. Дата публикации: 2001-08-01.

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Номер патента: US20240266224A1. Автор: Jhon Jhy Liaw,Chih-Yung Lin,Ta-Chun Lin,Kuo-Hua Pan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-08.

Epitaxial structure of semiconductor device, device and method of manufacturing epitaxial structure

Номер патента: US20240021671A1. Автор: HUI Zhang,Wenlong Zhou,Shiqiang Li,Kewei Tan,Susu KONG,Xiaoqing Du. Владелец: Dynax Semiconductor Inc. Дата публикации: 2024-01-18.

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Номер патента: US20200144371A1. Автор: Takeshi Tawara,Mina OHSE. Владелец: Fuji Electric Co Ltd. Дата публикации: 2020-05-07.

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Номер патента: US10236372B2. Автор: Keiji Okumura,Setsuko Wakimoto. Владелец: Fuji Electric Co Ltd. Дата публикации: 2019-03-19.

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Номер патента: US20220302251A1. Автор: Masanobu IWAYA,Kensuke HATA. Владелец: Fuji Electric Co Ltd. Дата публикации: 2022-09-22.

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Номер патента: US20200343345A1. Автор: Makoto Utsumi,Tsuyoshi ARAOKA. Владелец: Fuji Electric Co Ltd. Дата публикации: 2020-10-29.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20230326960A1. Автор: Keishirou KUMADA. Владелец: Fuji Electric Co Ltd. Дата публикации: 2023-10-12.

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Номер патента: US20240063269A1. Автор: Akimasa Kinoshita. Владелец: Fuji Electric Co Ltd. Дата публикации: 2024-02-22.

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Номер патента: US20190198621A1. Автор: Roland Rupp,Hans-Joachim Schulze,Josef Lutz. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2019-06-27.

Wide band gap semiconductor device and a method for forming a wide band gap semiconductor device

Номер патента: US10700168B2. Автор: Roland Rupp,Hans-Joachim Schulze,Josef Lutz. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2020-06-30.

Method of Forming a Super Junction Semiconductor Device Having Stripe-Shaped Regions of the Opposite Conductivity Types

Номер патента: US20160104768A1. Автор: Markus Schmitt,Hans Weber,Rolf Weis,Franz Hirler,Armin Willmeroth,Thomas Wahls. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2016-04-14.

Fabricating method of lateral-diffused metal oxide semiconductor device

Номер патента: US09780171B2. Автор: Ming-Shing Chen,Wei-Ting Wu,Ming-Hui Chang,Chao-Chun Ning. Владелец: United Microelectronics Corp. Дата публикации: 2017-10-03.

Method of forming a super junction semiconductor device having stripe-shaped regions of the opposite conductivity types

Номер патента: US09484400B2. Автор: Markus Schmitt,Hans Weber,Rolf Weis,Franz Hirler,Armin Willmeroth,Thomas Wahls. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2016-11-01.

Method of forming strained structures of semiconductor devices

Номер патента: US09748388B2. Автор: Clement Hsingjen Wann,Chih-Hsin Ko,Cheng-Hsien Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-08-29.

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Номер патента: US20180026133A1. Автор: Till Schloesser,Andreas Peter Meiser. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2018-01-25.

High voltage semiconductor device and the associated method of manufacturing

Номер патента: US20140015017A1. Автор: Lei Zhang,Ji-Hyoung Yoo. Владелец: Monolithic Power Systems Inc. Дата публикации: 2014-01-16.

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Номер патента: US20240079494A1. Автор: Manoj Kumar,Kilian ONG. Владелец: Nexperia BV. Дата публикации: 2024-03-07.

A semiconductor device and a method of manufacturing of a semiconductor device

Номер патента: EP4333074A1. Автор: Manoj Kumar,Kilian ONG. Владелец: Nexperia BV. Дата публикации: 2024-03-06.

Semiconductor device, method for fabricating the same, and memory system including the semiconductor device

Номер патента: US09786785B2. Автор: Seok-jun Won,Ji-Hye Yi,Kook-Tae KIM,Young-Tak Kim,Ho-Sung Son,Chul-Woong Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-10-10.

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Номер патента: US20140339633A1. Автор: Anton Mauder,Till Schloesser,Franz Hirler,Andreas Meiser. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2014-11-20.

Semiconductor device protective structure and method for fabricating the same

Номер патента: US20070007648A1. Автор: Wen-Kun Yang,Jui-Hsien Chang,Chihwei Lin,Kuang-Chi Chao,Cheng-hsien Chiu. Владелец: Advanced Chip Engineering Technology Inc. Дата публикации: 2007-01-11.

Method of manufacturing super-junction semiconductor device

Номер патента: US20110287617A1. Автор: Naoko Kodama. Владелец: Fuji Electric Co Ltd. Дата публикации: 2011-11-24.

Semiconductor device termination structures and methods of manufacturing semiconductor device termination structures

Номер патента: WO2024054763A1. Автор: Prasad Venkatraman,Balaji Padmanabhan. Владелец: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC. Дата публикации: 2024-03-14.

Semiconductor device termination structures and methods of manufacturing semiconductor device termination structures

Номер патента: US20240088237A1. Автор: Prasad Venkatraman,Balaji Padmanabhan. Владелец: Semiconductor Components Industries LLC. Дата публикации: 2024-03-14.

Method of manufacturing silicon carbide semiconductor device

Номер патента: US20230154999A1. Автор: Hidemoto Tomita. Владелец: Mirise Technologies Corp. Дата публикации: 2023-05-18.

Devices, systems, and methods related to removing parasitic conduction in semiconductor devices

Номер патента: US20140097441A1. Автор: Cem Basceri,Martin F. Schubert,Vladimir Odnoblyudov,Thomas Gehrke. Владелец: Micron Technology Inc. Дата публикации: 2014-04-10.

Devices, systems, and methods related to removing parasitic conduction in semiconductor devices

Номер патента: WO2014055277A1. Автор: Cem Basceri,Martin F. Schubert,Vladimir Odnoblyudov,Thomas Gehrke. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2014-04-10.

Devices, systems, and methods related to removing parasitic conduction in semiconductor devices

Номер патента: EP2904642A1. Автор: Cem Basceri,Martin F. Schubert,Vladimir Odnoblyudov,Thomas Gehrke. Владелец: Micron Technology Inc. Дата публикации: 2015-08-12.

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Номер патента: US11855184B2. Автор: Soo Chang Kang,Seong Jo HONG. Владелец: MagnaChip Semiconductor Ltd. Дата публикации: 2023-12-26.

Gate spacers and methods of forming the same in semiconductor devices

Номер патента: US11967532B2. Автор: Jhon Jhy Liaw,Chih-Yung Lin,Ta-Chun Lin,Kuo-Hua Pan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-04-23.

Structure for a semiconductor device and method for producing a structure for a semiconductor device

Номер патента: WO2022128913A1. Автор: Chiara Corvasce,Munaf Rahimo,Elizabeth BUITRAGO,Charalampos Papadopoulos. Владелец: Hitachi Energy Switzerland AG. Дата публикации: 2022-06-23.

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Номер патента: US20200135925A1. Автор: Samuel C. Pan,Hao-Hsiung Lin,Che-Wei Yang. Владелец: National Taiwan University NTU. Дата публикации: 2020-04-30.

Method for forming stressor, semiconductor device having stressor, and method for forming the same

Номер патента: US20200135926A1. Автор: Samuel C. Pan,Hao-Hsiung Lin,Che-Wei Yang. Владелец: National Taiwan University NTU. Дата публикации: 2020-04-30.

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Номер патента: US20150001596A1. Автор: Min-Su Lee,Hee-Chul Lee. Владелец: Korea Advanced Institute of Science and Technology KAIST. Дата публикации: 2015-01-01.

Apparatus and method for fabricating a high reverse voltage semiconductor device

Номер патента: US20040046228A1. Автор: Roman Hamerski,Walter Buchanan. Владелец: Individual. Дата публикации: 2004-03-11.

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Номер патента: US20030030069A1. Автор: Roman Hamerski,Walter Buchanan. Владелец: FabTech Inc. Дата публикации: 2003-02-13.

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Номер патента: US20070082428A1. Автор: Wen-Kun Yang,Jui-Hsien Chang,Chihwei Lin,Kuang-Chi Chao,Cheng-hsien Chiu. Владелец: Advanced Chip Engineering Technology Inc. Дата публикации: 2007-04-12.

Semiconductor device with capacitor and method of manufacturing thereof

Номер патента: US20030067053A1. Автор: Katsunobu Hori,Kenichiro Shiozawa,Moriaki Akazawa,Takeshi Matsunuma. Владелец: Mitsubishi Electric Corp. Дата публикации: 2003-04-10.

Systems and methods for a semiconductor structure having multiple semiconductor-device layers

Номер патента: US09646872B2. Автор: Clement Hsingjen Wann,Chun-Hsiung Tsai,Yi-Tang LIN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-05-09.

Semiconductor device, layout design and method for manufacturing a semiconductor device

Номер патента: US20160293689A1. Автор: Yi-Ting Wang,Chia-Hui Chen,Wei-Yu MA. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-10-06.

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Номер патента: US09640605B2. Автор: Yi-Ting Wang,Chia-Hui Chen,Wei-Yu MA. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-05-02.

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Номер патента: US11810902B2. Автор: Huilong Zhu. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2023-11-07.

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Номер патента: US20170287773A1. Автор: Clement Hsingjen Wann,Chun-Hsiung Tsai,Yi-Tang LIN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-10-05.

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Номер патента: US20180374742A1. Автор: Clement Hsingjen Wann,Chun Hsiung Tsai,Yi-Tang LIN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-12-27.

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Номер патента: US20200126845A1. Автор: Clement Hsingjen Wann,Chun Hsiung Tsai,Yi-Tang LIN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-04-23.

Methods of forming patterns of a semiconductor device

Номер патента: US20150076617A1. Автор: Jong-wook Lee,Myeong-Cheol Kim,Cheol Kim,Si-Young Choi,Choong-ho Lee,Jong-Chan Shin,Jong-Seo Hong,Il-Sup Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2015-03-19.

Layout of semiconductor device, semiconductor device and method of forming the same

Номер патента: US10553577B2. Автор: Yu-Cheng Tung. Владелец: United Microelectronics Corp. Дата публикации: 2020-02-04.

Systems and methods for a semiconductor structure having multiple semiconductor-device layers

Номер патента: US12087777B2. Автор: Clement Hsingjen Wann,Chun-Hsiung Tsai,Yi-Tang LIN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-10.

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Номер патента: US09704865B2. Автор: Junggun YOU,Wei-Hua Hsu,Hyungjong LEE,Choongho Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-07-11.

Method of forming complementary metal oxide semiconductor device with work function layer

Номер патента: US09721840B2. Автор: Chien-Chung Huang,Yu-Ping Wang,Chien-Ming Lai,Ya-Huei Tsai,Yu-Ting Tseng. Владелец: United Microelectronics Corp. Дата публикации: 2017-08-01.

Fabricating method of trench-gate metal oxide semiconductor device

Номер патента: US20140094013A1. Автор: Kuan-Ling LIU,Shih-Yuan UENG. Владелец: United Microelectronics Corp. Дата публикации: 2014-04-03.

Semiconductor device including transistor and method for fabricating the same

Номер патента: US20220328687A1. Автор: Young Gwang YOON. Владелец: SK hynix Inc. Дата публикации: 2022-10-13.

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Номер патента: WO2015017117A1. Автор: Roy E. Meade,Sumeet C. Pandey. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2015-02-05.

Methods of forming a device having semiconductor devices on two sides of a buried dielectric layer

Номер патента: EP3504734A1. Автор: Sinan Goktepeli,Stephen Alan Fanelli. Владелец: Qualcomm Inc. Дата публикации: 2019-07-03.

Methods of forming a device having semiconductor devices on two sides of a buried dielectric layer

Номер патента: US09837302B1. Автор: Sinan Goktepeli,Stephen Alan Fanelli. Владелец: Qualcomm Inc. Дата публикации: 2017-12-05.

Method of manufacturing capacitors for semiconductor devices

Номер патента: US7163859B2. Автор: Dong-Woo Kim,Jae-hee Oh. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2007-01-16.

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Номер патента: US20090278189A1. Автор: Hoo-Sung Cho,Kyoung-hoon Kim,Nok-Hyun JU. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2009-11-12.

Methods of forming a device having semiconductor devices on two sides of a buried dielectric layer

Номер патента: WO2018038865A1. Автор: Sinan Goktepeli,Stephen Alan Fanelli. Владелец: QUALCOMM INCORPORATED. Дата публикации: 2018-03-01.

Semiconductor device including thyristor and method of manufacturing the same

Номер патента: US8049248B2. Автор: Tetsuya Ikuta. Владелец: Sony Corp. Дата публикации: 2011-11-01.

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Номер патента: US09691616B2. Автор: Taku Horii. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2017-06-27.

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Номер патента: US09793121B2. Автор: Yasuyuki Kawada. Владелец: Fuji Electric Co Ltd. Дата публикации: 2017-10-17.

Semiconductor-metal-on-insulator structures, methods of forming such structures, and semiconductor devices including such structures

Номер патента: US09608119B2. Автор: Ming Zhang,John K. Zahurak,Andrew M. Bayless,Sanh D. Tang. Владелец: Micron Technology Inc. Дата публикации: 2017-03-28.

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Номер патента: US11600702B2. Автор: Yasuyuki Kawada. Владелец: Fuji Electric Co Ltd. Дата публикации: 2023-03-07.

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Номер патента: US20220013641A1. Автор: Yasuyuki Kawada. Владелец: Fuji Electric Co Ltd. Дата публикации: 2022-01-13.

Semiconductor device, power circuit, and manufacturing method of semiconductor device

Номер патента: US09647131B2. Автор: Shunpei Yamazaki,Kei Takahashi,Yoshiaki Ito. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2017-05-09.

Semiconductor device including transistor and method of manufacturing the same

Номер патента: US8937343B2. Автор: NaeIn Lee,Dong Hyuk Kim,DongSuk Shin,Hoi Sung Chung. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2015-01-20.

Method of manufacturing silicon carbide semiconductor device

Номер патента: US20160314973A1. Автор: Yasuyuki Kawada. Владелец: Fuji Electric Co Ltd. Дата публикации: 2016-10-27.

Method of manufacturing silicon carbide semiconductor device

Номер патента: CA2669949A1. Автор: Kazuhiro Fujikawa. Владелец: Kazuhiro Fujikawa. Дата публикации: 2008-06-05.

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Номер патента: US20160240380A1. Автор: Taku Horii. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2016-08-18.

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Номер патента: US20240371854A1. Автор: Chia-Lin Hsu,Yu-Ti Su. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-11-07.

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Номер патента: US20170047243A1. Автор: Sungmin Kim,Heonjong Shin,Byungseo Kim,Sunhom Steve Paak,Hyunjun Bae. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-02-16.

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Номер патента: US09515172B2. Автор: Sungmin Kim,Heonjong Shin,Byungseo Kim,Sunhom Steve Paak,Hyunjun Bae. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-12-06.

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Номер патента: US20230420536A1. Автор: Sei-Hyung Ryu,Rahul R. Potera,Madankumar Sampath. Владелец: Wolfspeed Inc. Дата публикации: 2023-12-28.

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Номер патента: US20230231058A1. Автор: Mark I. Gardner,H. Jim Fulford. Владелец: Tokyo Electron Ltd. Дата публикации: 2023-07-20.

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Номер патента: US20240250141A1. Автор: Chih-Hao Wang,Kuo-Cheng Chiang,Shi Ning Ju,Chih-Chao CHOU,Wen-Ting Lan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-25.

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Номер патента: US20210391327A1. Автор: Jhon-Jhy Liaw,Chun-Sheng Liang,Hsin-Che Chiang,Kuo-Hua Pan,Yu-San Chien. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-12-16.

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Номер патента: US20230032528A1. Автор: Chien-Hao Huang,Katherine H. Chiang,Ming-Yen Chuang,Yun-Feng KAO,Gao-Ming Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-02-02.

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Номер патента: US12132106B2. Автор: Shin-Hung Li. Владелец: United Microelectronics Corp. Дата публикации: 2024-10-29.

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Номер патента: US09478636B2. Автор: Ru-Gun Liu,Chih-Ming Lai,Chih-Liang Chen,Charles Chew-Yuen Young,Kam-Tou SIO,Meng-Hung Shen,Shu-Hui Sung,Chun-Hung Liou. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-10-25.

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Номер патента: US09406521B1. Автор: Yu-Cheng Tung,En-Chiuan Liou. Владелец: United Microelectronics Corp. Дата публикации: 2016-08-02.

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Номер патента: US09653460B1. Автор: Chih-Chung Wang,Wen-Fang Lee,Shin-Hung Li,Nien-Chung Li,Kuan-Chuan Chen. Владелец: United Microelectronics Corp. Дата публикации: 2017-05-16.

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Номер патента: US09653402B2. Автор: Chen-Ming Huang,I-Ming Tseng,Wen-An Liang. Владелец: United Microelectronics Corp. Дата публикации: 2017-05-16.

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Номер патента: US09640658B2. Автор: Dong Hyuk Kim,DongSuk Shin,Myungsun Kim,Hoi Sung Chung. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-05-02.

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Номер патента: US20230299136A1. Автор: Tze-Liang Lee,Pei-Yu Chou. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-09-21.

Backside vias in semiconductor device

Номер патента: US12132092B2. Автор: Chih-Hao Wang,Cheng-Chi Chuang,Huan-Chieh Su,Li-Zhen YU,Lin-Yu HUANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-29.

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Номер патента: US12080713B2. Автор: Cheng-Chi Chuang,Ching-Wei Tsai,Yi-Hsun CHIU,Shang-Wen Chang,Yu-Xuan Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-03.

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Номер патента: US20240363626A1. Автор: Cheng-Chi Chuang,Ching-Wei Tsai,Yi-Hsun CHIU,Shang-Wen Chang,Yu-Xuan Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-31.

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Номер патента: US09780201B2. Автор: Hidekazu Miyairi,Shunpei Yamazaki,Yoshinori Ando,Yasutaka Suzuki,Miki Suzuki,Kosei Nei,Yoshinori IEDA,Naoto Yamade,Asako Higa. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2017-10-03.

Semiconductor device and manufacturing method of the same

Номер патента: US09431435B2. Автор: Hidekazu Miyairi,Shunpei Yamazaki,Yoshinori Ando,Yasutaka Suzuki,Miki Suzuki,Kosei Nei,Yoshinori IEDA,Naoto Yamade,Asako Higa. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2016-08-30.

Fin field-effect transistor and method of forming the same

Номер патента: US12080556B2. Автор: Ming-Hsi Yeh,Jian-Jou LIAN,Chun-Neng LIN,Chieh-Wei Chen,Po-Yuan Wang,Tzu Ang Chiang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-03.

Fin field-effect transistor and method of forming the same

Номер патента: US20220189776A1. Автор: Ming-Hsi Yeh,Jian-Jou LIAN,Chun-Neng LIN,Chieh-Wei Chen,Po-Yuan Wang,Tzu Ang Chiang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-06-16.

Systems and methods for a semiconductor structure having multiple semiconductor-device layers

Номер патента: US09704880B2. Автор: Clement Hsingjen Wann,Chun-Hsiung Tsai,Yi-Tang LIN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-07-11.

Semiconductor device including an oxide semiconductor and the display device including the semiconductor device

Номер патента: US09577110B2. Автор: Shunpei Yamazaki,Junichi Koezuka,Yasutaka Nakazawa,Yukinori Shima,Masami Jintyou,Takashi HAMOCHI. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2017-02-21.

Semiconductor device with capacitor and method for forming the same

Номер патента: US20240030359A1. Автор: Shu-Hui SU,Yu-Chi Chang,Hsin-Li Cheng,Hsuan-Ning Shih,Yingkit Felix Tsui. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-01-25.

Systems and methods for forming additional metal routing in semiconductor devices

Номер патента: EP1977447A2. Автор: James Green,Mark Fischer,Terry McDaniel. Владелец: Micron Technology Inc. Дата публикации: 2008-10-08.

Thin-film semiconductor device, display apparatus, and method for manufacturing thin-film semiconductor device

Номер патента: US20130075745A1. Автор: Sadayoshi Hotta,Arinobu Kanegae. Владелец: Panasonic Corp. Дата публикации: 2013-03-28.

Method of making a thin film semiconductor device

Номер патента: US5897344A. Автор: Satoshi Teramoto,Yasuhiko Takemura,Hongyong Zhang. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 1999-04-27.

Method of manufacturing semiconductor device

Номер патента: US09536776B2. Автор: Takahiro Maruyama,Tatsunori Murata. Владелец: Renesas Electronics Corp. Дата публикации: 2017-01-03.

Semiconductor arrangement having first semiconductor device over first shallow well having first conductivity type and second semiconductor device over second shallow well having second conductivity type and formation thereof

Номер патента: US09401361B2. Автор: Hsiao-Tsung Yen,Cheng-Wei Luo. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-07-26.

Flip-flop with transistors having different threshold voltages, semiconductor device including same and methods of manufacturing same

Номер патента: US20230421141A1. Автор: Xiangdong Chen,Jerry Chang Jui Kao,Hui-Zhong ZHUANG,Yung-Chen CHIEN,Huaixin XIAN,Xing Chao YIN. Владелец: TSMC Nanjing Co Ltd. Дата публикации: 2023-12-28.

Method of producing a complementary-type semiconductor device

Номер патента: US5036019A. Автор: Yasushi Higuchi,Hiroyuki Yamane. Владелец: NipponDenso Co Ltd. Дата публикации: 1991-07-30.

Compound semiconductor device and method of manufacturing compound semiconductor device

Номер патента: US20230036228A1. Автор: Yoshikazu Motoyama,Akito Iwao. Владелец: Sony Semiconductor Solutions Corp. Дата публикации: 2023-02-02.

Superjunction semiconductor device and method of manufacturing same

Номер патента: US20230223436A1. Автор: Myeong Bum PYUN,Min Gi JO,Jin Young Goh. Владелец: DB HiTek Co Ltd. Дата публикации: 2023-07-13.

Silicon carbide semiconductor substrate, method of manufacturing silicon carbide semiconductor substrate, silicon carbide semiconductor device, and method of manufacturing silicon carbide semiconductor device

Номер патента: US20240204051A1. Автор: Takeshi Tawara,Shinsuke Harada,Kensuke Takenaka. Владелец: Fuji Electric Co Ltd. Дата публикации: 2024-06-20.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US12132084B2. Автор: Yohei Kagoyama. Владелец: Fuji Electric Co Ltd. Дата публикации: 2024-10-29.

Field effect semiconductor devices and methods of manufacturing field effect semiconductor devices

Номер патента: US09450071B2. Автор: Jong-Seob Kim,In-jun Hwang,Jai-Kwang Shin,Jae-joon Oh,Hyuk-soon Choi,Ki-ha Hong,Ho-Jung Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-09-20.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US12027617B2. Автор: Akimasa Kinoshita. Владелец: Fuji Electric Co Ltd. Дата публикации: 2024-07-02.

Semiconductor device with gate recess and methods of forming the same

Номер патента: US20240306360A1. Автор: Jhon Jhy Liaw. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-12.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20190237547A1. Автор: Koichi Murata,Takeshi Tawara,Hidekazu Tsuchida. Владелец: Fuji Electric Co Ltd. Дата публикации: 2019-08-01.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20210074849A1. Автор: Akimasa Kinoshita. Владелец: Fuji Electric Co Ltd. Дата публикации: 2021-03-11.

Method of manufacturing silicon carbide semiconductor device and silicon carbide semiconductor device

Номер патента: US20220393002A1. Автор: Takafumi Uchida. Владелец: Fuji Electric Co Ltd. Дата публикации: 2022-12-08.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20230055755A1. Автор: Yasuyuki Kawada. Владелец: Fuji Electric Co Ltd. Дата публикации: 2023-02-23.

Semiconductor device and method of operation

Номер патента: US20190123139A1. Автор: Adam Richard Brown,Steven Waterhouse,Saurabh Pandey,Phil Rutter,Jim Brett PARKIN. Владелец: Nexperia BV. Дата публикации: 2019-04-25.

Semiconductor device and method of operation

Номер патента: US20200066840A9. Автор: Adam Richard Brown,Steven Waterhouse,Saurabh Pandey,Phil Rutter,Jim Brett PARKIN. Владелец: Nexperia BV. Дата публикации: 2020-02-27.

Semiconductor device and method of forming the same

Номер патента: US09905464B2. Автор: Chao-Hung Lin,Chih-Kai Hsu,Ssu-I Fu,Yu-Hsiang Hung,Jyh-Shyang Jenq. Владелец: United Microelectronics Corp. Дата публикации: 2018-02-27.

Transistors and methods of forming transistors using vertical nanowires

Номер патента: US20180233583A1. Автор: Alexander Reznicek,Dominic J. Schepis. Владелец: Globalfoundries Inc. Дата публикации: 2018-08-16.

Gate-all-around structure with self substrate isolation and methods of forming the same

Номер патента: US12046681B2. Автор: Kuan-Lun Cheng,Ching-Wei Tsai,Cheng-Ting Chung. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-23.

Gate-All-Around Structure with Self Substrate Isolation and Methods of Forming the Same

Номер патента: US20210098634A1. Автор: Kuan-Lun Cheng,Ching-Wei Tsai,Cheng-Ting Chung. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-04-01.

Gate-all-around structure with self substrate isolation and methods of forming the same

Номер патента: US20240339545A1. Автор: Kuan-Lun Cheng,Ching-Wei Tsai,Cheng-Ting Chung. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-10.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US11469303B2. Автор: Makoto Utsumi,Masaki Miyazato. Владелец: Fuji Electric Co Ltd. Дата публикации: 2022-10-11.

Silicon carbide semiconductor device, method of manufacturing silicon carbide semiconductor device and method of designing silicon carbide semiconductor device

Номер патента: US09640618B2. Автор: Shunichi Nakamura,Akihiko Sugai,Tetsuto INOUE. Владелец: Shindengen Electric Manufacturing Co Ltd. Дата публикации: 2017-05-02.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20240290842A1. Автор: Naoyuki Ohse. Владелец: Fuji Electric Co Ltd. Дата публикации: 2024-08-29.

Semiconductor device including fin shaped structure and method for fabricating the same

Номер патента: US09722078B2. Автор: Chao-Hung Lin,Chung-Yi Chiu,Shih-Fang Hong. Владелец: United Microelectronics Corp. Дата публикации: 2017-08-01.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US12080762B2. Автор: Makoto Utsumi,Naoyuki Ohse. Владелец: Fuji Electric Co Ltd. Дата публикации: 2024-09-03.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US09978598B2. Автор: Makoto Utsumi,Yoshiyuki Sakai. Владелец: Fuji Electric Co Ltd. Дата публикации: 2018-05-22.

Semiconductor device and manufacturing method of forming the same

Номер патента: US20240234405A9. Автор: Seungchul Lee,Yijyun Ke. Владелец: PanJit International Inc. Дата публикации: 2024-07-11.

Method of manufacturing nitride semiconductor device using laminated cap layers

Номер патента: US09805930B2. Автор: Katsunori Ueno,Ryo Tanaka,Masaharu Edo,Shinya Takashima. Владелец: Fuji Electric Co Ltd. Дата публикации: 2017-10-31.

Semiconductor device and formation thereof

Номер патента: US09847233B2. Автор: Yen-Ting Chen,Chee-Wee Liu,I-Hsieh Wong. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-12-19.

Method of manufacturing high-voltage semiconductor device and low-voltage semiconductor device

Номер патента: US7910466B2. Автор: Choul Joo Ko. Владелец: Dongbu Electronics Co Ltd. Дата публикации: 2011-03-22.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US09887270B2. Автор: Fumikazu Imai,Takuya Komatsu,Masanobu IWAYA. Владелец: Fuji Electric Co Ltd. Дата публикации: 2018-02-06.

Gate-all-around nanowire device and method for manufacturing such a device

Номер патента: US09991261B2. Автор: Jerome Mitard. Владелец: Interuniversitair Microelektronica Centrum vzw IMEC. Дата публикации: 2018-06-05.

Vertical non-planar semiconductor device for system-on-chip (SoC) applications

Номер патента: US09520494B2. Автор: Walid M. Hafez,Chia-Hong Jan,Jeng-Ya D. YEH,Joodong Park,Curtis Tsai. Владелец: Intel Corp. Дата публикации: 2016-12-13.

Semiconductor devices including capacitor and methods of manufacturing the semiconductor devices

Номер патента: US20240186368A1. Автор: Hyunsuk Lee,Gihee CHO,Sangyeol KANG,Jungoo Kang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-06-06.

Silicon carbide semiconductor device, silicon carbide semiconductor assembly, and method of manufacturing silicon carbide semiconductor device

Номер патента: US20200152594A1. Автор: Makoto Utsumi,Yoshiyuki Sakai. Владелец: Fuji Electric Co Ltd. Дата публикации: 2020-05-14.

Semiconductor device with recess and method of manufacturing the same

Номер патента: US11049869B2. Автор: Takashi Hashimoto,Shinichiro Abe,Hideaki YAMAKOSHI,Yuto OMIZU. Владелец: Renesas Electronics Corp. Дата публикации: 2021-06-29.

Semiconductor device and fabrication method of the semiconductor device

Номер патента: US20090189200A1. Автор: Kazutaka Takagi. Владелец: Toshiba Corp. Дата публикации: 2009-07-30.

Semiconductor device, power converter, and method of manufacturing semiconductor device

Номер патента: US12074132B2. Автор: Yo Tanaka. Владелец: Mitsubishi Electric Corp. Дата публикации: 2024-08-27.

Semiconductor device manufacturing methods and methods of forming insulating material layers

Номер патента: US09607826B2. Автор: Neng-Kuo Chen,Sey-Ping Sun,Clement Hsingjen Wann,Gin-Chen Huang,Tsai-fu Hsiao,Ching-Hong Jiang,Hongfa Luan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-03-28.

Semiconductor device, silicon wafer and method of manufacturing a silicon wafer

Номер патента: US10566424B2. Автор: Hans-Joachim Schulze,Helmut Oefner,Nico Caspary. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2020-02-18.

Semiconductor device having groove and method of fabricating the same

Номер патента: US20030068875A1. Автор: Nak-Jin Son. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2003-04-10.

Semiconductor device, silicon wafer and method of manufacturing a silicon wafer

Номер патента: US20180097064A1. Автор: Hans-Joachim Schulze,Helmut Oefner,Nico Caspary. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2018-04-05.

Semiconductor Device Manufacturing Methods and Methods of Forming Insulating Material Layers

Номер патента: US20130043512A1. Автор: Neng-Kuo Chen,Sey-Ping Sun,Clement Hsingjen Wann,Gin-Chen Huang,Tsai-fu Hsiao,Ching-Hong Jiang,Hongfa Luan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2013-02-21.

Semiconductor device, semiconductor structure and method for fabricating semiconductor device and semiconductor structure using tilted etch process

Номер патента: US12094718B2. Автор: Huan-Yung Yeh. Владелец: Nanya Technology Corp. Дата публикации: 2024-09-17.

Semiconductor device, silicon wafer and method of manufacturing a silicon wafer

Номер патента: US20200161424A1. Автор: Hans-Joachim Schulze,Helmut Oefner,Nico Caspary. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2020-05-21.

Method of manufacturing silicon carbide semiconductor device

Номер патента: US09613809B2. Автор: Taku Horii,Masaki Kijima. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2017-04-04.

Method of forming a nano-fet semiconductor device

Номер патента: US20240332401A1. Автор: Yee-Chia Yeo,Sen-Hong Syue,Huicheng Chang,Yi-Rui Chen,Wen-Kai Lin,Chen-Fong Tsai,Li-Chi Yu,Yoh-Rong Liu,Cheng-I Chu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-03.

Method of forming a nano-FET semiconductor device

Номер патента: US12040382B2. Автор: Yee-Chia Yeo,Sen-Hong Syue,Huicheng Chang,Yi-Rui Chen,Wen-Kai Lin,Chen-Fong Tsai,Li-Chi Yu,Yoh-Rong Liu,Cheng-I Chu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-16.

Method of manufacturing thin film semiconductor device

Номер патента: US09328414B2. Автор: Masafumi Kunii. Владелец: Japan Display Inc. Дата публикации: 2016-05-03.

Semiconductor device, integrated circuit and method of forming a semiconductor device

Номер патента: US09735243B2. Автор: Rolf Weis,Franz Hirler,Andreas Meiser,Markus Zundel,Martin Vielemeyer,Peter Irsigler. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2017-08-15.

Semiconductor device and manufacturing method thereof, and electronic device including the semiconductor device

Номер патента: US12046672B2. Автор: Huilong Zhu. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2024-07-23.

Metal film and manufacturing method of the metal film, and semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20230411320A1. Автор: Tadashi Yamaguchi. Владелец: Renesas Electronics Corp. Дата публикации: 2023-12-21.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20180090320A1. Автор: Mitsuo Okamoto,Takashi Tsutsumi,Kenji Fukuda,Masaki Miyazato,Youichi Makifuchi,Tsuyoshi ARAOKA. Владелец: Fuji Electric Co Ltd. Дата публикации: 2018-03-29.

Method of manufacturing transistor and semiconductor device including the same

Номер патента: US09530848B2. Автор: Moon Sik SEO. Владелец: SK hynix Inc. Дата публикации: 2016-12-27.

Semiconductor device, measurement apparatus, and measurement method of relative permittivity

Номер патента: US09530893B2. Автор: Tatsuya Honda,Akiharu Miyanaga. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2016-12-27.

Methods of forming group III-nitride semiconductor devices including implanting ions directly into source and drain regions and annealing to activate the implanted ions

Номер патента: US09711633B2. Автор: Sten Heikman,Scott T. Sheppard,Yifeng Wu,Matthew Jacob-Mitos,R. Peter Smith. Владелец: Cree Inc. Дата публикации: 2017-07-18.

Method of making a vertical gate semiconductor device

Номер патента: EP1535342A1. Автор: Gordon M. Grivna. Владелец: Semiconductor Components Industries LLC. Дата публикации: 2005-06-01.

Method of making a vertical gate semiconductor device

Номер патента: WO2004017414A1. Автор: Gordon M. Grivna. Владелец: Semiconductor Components Industries L.L.C.. Дата публикации: 2004-02-26.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20200279947A1. Автор: Fumitoshi Yamamoto. Владелец: Mitsubishi Electric Corp. Дата публикации: 2020-09-03.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20220254917A1. Автор: Masaki Miyazato,Yohei Kagoyama. Владелец: Fuji Electric Co Ltd. Дата публикации: 2022-08-11.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20210167173A1. Автор: Takumi Fujimoto. Владелец: Fuji Electric Co Ltd. Дата публикации: 2021-06-03.

Method for direct forming stressor, semiconductor device having stressor, and method for forming the same

Номер патента: US20190326178A1. Автор: Samuel C. Pan,Hao-Hsiung Lin,Che-Wei Yang. Владелец: National Taiwan University NTU. Дата публикации: 2019-10-24.

Method for direct forming stressor, semiconductor device having stressor, and method for forming the same

Номер патента: US20200118883A1. Автор: Samuel C. Pan,Hao-Hsiung Lin,Che-Wei Yang. Владелец: National Taiwan University NTU. Дата публикации: 2020-04-16.

Method for direct forming stressor, semiconductor device having stressor, and method for forming the same

Номер патента: US20200118882A1. Автор: Samuel C. Pan,Hao-Hsiung Lin,Che-Wei Yang. Владелец: National Taiwan University NTU. Дата публикации: 2020-04-16.

Method of patterning features of a semiconductor device

Номер патента: US09627262B2. Автор: Ming-Feng Shieh,Ru-Gun Liu,Chih-Ming Lai,Wen-Chun Huang,Wei-Chao Chiu,Chen-Yu Chen,Nian-Fuh Cheng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-04-18.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20210217852A1. Автор: Makoto Utsumi,Masaki Miyazato. Владелец: Fuji Electric Co Ltd. Дата публикации: 2021-07-15.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20210111250A1. Автор: Setsuko Wakimoto. Владелец: Fuji Electric Co Ltd. Дата публикации: 2021-04-15.

Semiconductor device, semiconductor module, and method for manufacturing semiconductor device

Номер патента: US20240313120A1. Автор: Kentaro Mori,Kenichi Ohashi,Soichi Yamashita,Hiroki Okuyama,Kazushiro NOMURA,Aya MURAYOSHI. Владелец: Toshiba Electronic Devices and Storage Corp. Дата публикации: 2024-09-19.

Silicon carbide semiconductor device, method of manufacturing silicon carbide semiconductor device and method of designing silicon carbide semiconductor device.

Номер патента: US20160254356A1. Автор: Shunichi Nakamura,Akihiko Sugai,Tetsuto INOUE. Владелец: Shindengen Electric Manufacturing Co Ltd. Дата публикации: 2016-09-01.

Semiconductor device, electronic apparatus, and method of manufacturing semiconductor device

Номер патента: US11069801B2. Автор: Hirokazu Ejiri. Владелец: Sony Semiconductor Solutions Corp. Дата публикации: 2021-07-20.

Semiconductor device, electronic apparatus, and method of manufacturing semiconductor device

Номер патента: US20200194582A1. Автор: Hirokazu Ejiri. Владелец: Sony Semiconductor Solutions Corp. Дата публикации: 2020-06-18.

Method of fabricating memory cell in semiconductor device

Номер патента: US20050189581A1. Автор: Tae Park. Владелец: DongbuAnam Semiconductor Inc. Дата публикации: 2005-09-01.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20180301536A1. Автор: Makoto Utsumi,Fumikazu Imai,Yasuhiko OONISHI. Владелец: Fuji Electric Co Ltd. Дата публикации: 2018-10-18.

Two-dimensional semiconductor device, optoelectronic unit and method for making the two-dimensional semiconductor device

Номер патента: US20200312965A1. Автор: Chun-An Chen,Yi-Hsien Lee,xin-quan Zhang,Ying-Yu Lai,I-tung Chen. Владелец: National Tsing Hua University NTHU. Дата публикации: 2020-10-01.

Wiring structure and method of forming the same, and semiconductor device including the wiring structure

Номер патента: US09716043B2. Автор: Jeong-Hoon Ahn,Sang-Chul Lee,In-Hwan Kim,Jun-Jung Kim,Joon-Nyung Lee,Yeon-Joo Kim,Jin-Hyeung PARK,Kyoung-Pil Park,Hyo-Seon LEE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-07-25.

Method of fabricating a metal gate semiconductor device

Номер патента: US20130260547A1. Автор: Ming Zhu,Bao-Ru Young,Hak-Lay Chuang,Sheng-Chen Chung,Jyun-Ming Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2013-10-03.

Method of manufacturing method a semiconductor device, a semiconductor device manufactured using this method and a mosfet device manufactured according to the method

Номер патента: US20240162334A1. Автор: Kilian ONG,Aryadeep Mrinal,Dnyanesh Havaldar. Владелец: Nexperia BV. Дата публикации: 2024-05-16.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20180138273A1. Автор: Takashi Tsuji. Владелец: Fuji Electric Co Ltd. Дата публикации: 2018-05-17.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20170271468A1. Автор: Fumikazu Imai,Takuya Komatsu,Masanobu IWAYA. Владелец: Fuji Electric Co Ltd. Дата публикации: 2017-09-21.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US11942517B2. Автор: Takeyoshi Masuda. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2024-03-26.

Semiconductor devices including capacitor and methods of manufacturing the semiconductor devices

Номер патента: US11929392B2. Автор: Hyunsuk Lee,Gihee CHO,Sangyeol KANG,Jungoo Kang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-03-12.

Semiconductor device including graphene and method of manufacturing the semiconductor device

Номер патента: US12027589B2. Автор: Hyeonjin Shin,Seongjun Park,Yunseong LEE,Keunwook SHIN,Seunggeol NAM,Yeonchoo CHO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-02.

Method of manufacturing super-junction semiconductor device

Номер патента: US20110287598A1. Автор: Takayuki SHIMATOU. Владелец: Fuji Electric Co Ltd. Дата публикации: 2011-11-24.

Method of manufacturing silicon carbide semiconductor device

Номер патента: US20190157398A1. Автор: Makoto Utsumi,Fumikazu Imai,Yasuhiko OONISHI. Владелец: Fuji Electric Co Ltd. Дата публикации: 2019-05-23.

Method of manufacturing silicon carbide semiconductor device

Номер патента: US20220336219A1. Автор: Daisuke Taniguchi,Toshikazu Tanioka,Junya MIWA. Владелец: Mitsubishi Electric Corp. Дата публикации: 2022-10-20.

Method of Manufacturing a Power Semiconductor Device

Номер патента: US20190157401A1. Автор: Hans-Joachim Schulze,Christoph Weiss,Daniel Schloegl,Matthias Kuenle. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2019-05-23.

Method of manufacturing silicon carbide semiconductor device

Номер патента: CA2667247A1. Автор: Takeyoshi Masuda,Kazuhiro Fujikawa. Владелец: Kazuhiro Fujikawa. Дата публикации: 2008-05-08.

Process of manufacturing trench gate semiconductor device

Номер патента: EP2020681A3. Автор: Richard K. Williams,Wayne B. Grabowski. Владелец: Advanced Analogic Technologies Inc. Дата публикации: 2009-06-10.

Methods of manufacturing vertical channel semiconductor devices

Номер патента: US7781287B2. Автор: Dong-gun Park,Choong-ho Lee,Jae-Man Yoon,Seong-Goo Kim,Seung-Bae Park,Won-sok Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2010-08-24.

Semiconductor device and method of forming patterns for a semiconductor device

Номер патента: US20200144391A1. Автор: Dae Sung EOM. Владелец: SK hynix Inc. Дата публикации: 2020-05-07.

Method of forming metal silicide layer, semiconductor device and method of fabricating same

Номер патента: US10490647B1. Автор: Yugui Zhang,Jianzhi Fang,Kangjun Peng,Qunzheng Lin. Владелец: Nexchip Semiconductor Corp. Дата публикации: 2019-11-26.

Method of manufacturing trench type semiconductor device

Номер патента: US20220157958A1. Автор: Jau-Yan Lin. Владелец: Advanced Power Electronics Corp USA. Дата публикации: 2022-05-19.

Semiconductor device, semiconductor structure and method for fabricating semiconductor device and semiconductor structure using tilted etch process

Номер патента: US20240047217A1. Автор: Huan-Yung Yeh. Владелец: Nanya Technology Corp. Дата публикации: 2024-02-08.

Semiconductor device, semiconductor structure and method for fabricating semiconductor device and semiconductor structure using tilted etch process

Номер патента: US20230335408A1. Автор: Huan-Yung Yeh. Владелец: Nanya Technology Corp. Дата публикации: 2023-10-19.

Semiconductor device channel system and method

Номер патента: US09735239B2. Автор: Gerben Doornbos,Matthias Passlack,Krishna Kumar Bhuwalka. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-08-15.

Method of forming oxide film including two non-oxygen elements, method of manufacturing semiconductor device, method of forming dielectric film, and semiconductor device

Номер патента: US20210028010A1. Автор: Seungmin Ryu,Younjoung CHO,Younsoo Kim,Sunmin Moon,Haeryong Kim,Kyooho JUNG,Jeonggyu SONG,Changsu WOO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-01-28.

Method of forming oxide film including two non-oxygen elements, method of manufacturing semiconductor device, method of forming dielectric film, and semiconductor device

Номер патента: US20210343524A1. Автор: Seungmin Ryu,Younjoung CHO,Younsoo Kim,Sunmin Moon,Haeryong Kim,Kyooho JUNG,Jeonggyu SONG,Changsu WOO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-11-04.

Semiconductor device, display apparatus, and manufacturing method of the semiconductor device

Номер патента: US20240213335A1. Автор: Takashi Shiraishi,Kenichi Okazaki,Yasutaka Nakazawa,Yasuharu Hosaka,Rai Sato. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2024-06-27.

Method of making silicon-on-sapphire semiconductor devices

Номер патента: US4775641A. Автор: Glenn W. Cullen,Michael T. Duffy. Владелец: General Electric Co. Дата публикации: 1988-10-04.

Method of multiple patterning to form semiconductor devices

Номер патента: US20140024191A1. Автор: Kangguo Cheng,Bruce B. Doris,Kuang-Jung Chen,Sen Liu,Steven J. Holmes. Владелец: International Business Machines Corp. Дата публикации: 2014-01-23.

Semiconductor device and manufacturing method thereof, and electronic device including the semiconductor device

Номер патента: US20210175344A1. Автор: Huilong Zhu. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2021-06-10.

Method of forming gate line of semiconductor device

Номер патента: US20100048014A1. Автор: Chang Ki Park. Владелец: Hynix Semiconductor Inc. Дата публикации: 2010-02-25.

Methods of forming silicide layer of semiconductor device

Номер патента: US20050142727A1. Автор: Jin Jung. Владелец: DongbuAnam Semiconductor Inc. Дата публикации: 2005-06-30.

Crystalline inzno oxide semiconductor, method of forming the same, and semiconductor device including the crystalline inzno oxide semiconductor

Номер патента: EP4375400A1. Автор: Seonghwan Ryu,Kwanghee Lee,Sangwook Kim,Jinseong PARK,Hyemi KIM. Владелец: Industry University Cooperation Foundation IUCF HYU. Дата публикации: 2024-05-29.

Crystalline inzno oxide semiconductor, method of forming the same, and semiconductor device including the crystalline inzno oxide semiconductor

Номер патента: US20240178324A1. Автор: Seonghwan Ryu,Kwanghee Lee,Sangwook Kim,Jinseong PARK,Hyemi KIM. Владелец: Industry University Cooperation Foundation IUCF HYU. Дата публикации: 2024-05-30.

Silicon carbide semiconductor device, power converter, and method for manufacturing silicon carbide semiconductor device

Номер патента: US20220149173A1. Автор: Tomoaki Noguchi,Yosuke Nakanishi. Владелец: Mitsubishi Electric Corp. Дата публикации: 2022-05-12.

Methods of forming dielectric structures in semiconductor devices

Номер патента: WO2008054689A1. Автор: Leonard Forbes,Kie Y. Ahn. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2008-05-08.

Semiconductor device gate structure and method of fabricating thereof

Номер патента: US20180145149A1. Автор: Chun-Sheng Liang,Hsin-Che Chiang,Ju-Yuan TZENG,Shu-Hui Wang,Kuo-Hua Pan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-05-24.

Semiconductor device, display apparatus, and manufacturing method of semiconductor device

Номер патента: US20220320346A1. Автор: Atsushi Sasaki. Владелец: Joled Inc. Дата публикации: 2022-10-06.

Semiconductor device gate structure and method of fabricating thereof

Номер патента: US20190088763A1. Автор: Chun-Sheng Liang,Hsin-Che Chiang,Shu-Hui Wang,Kuo-Hua Pan,Ju-Yuan TSENG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2019-03-21.

Method of fabricating hybrid impact-ionization semiconductor device

Номер патента: US20110227161A1. Автор: Ming Zhu,Lee-Wee Teo,Harry Hak-Lay Chuang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2011-09-22.

Semiconductor device with stressors and methods thereof

Номер патента: WO2008147608A1. Автор: Paul A. Grudowski,Veeraraghavan Dhandapani,Stefan Zollner. Владелец: Freescale Semiconductor Inc.. Дата публикации: 2008-12-04.

Two-dimensional semiconductor device, optoelectronic unit and method for making the two-dimensional semiconductor device

Номер патента: US11183568B2. Автор: Chun-An Chen,Yi-Hsien Lee,xin-quan Zhang,Ying-Yu Lai,I-tung Chen. Владелец: National Tsing Hua University NTHU. Дата публикации: 2021-11-23.

Method of forming gate pattern and semiconductor device

Номер патента: US20120276727A1. Автор: QIYANG He,YIYING Zhang. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2012-11-01.

Methods of removing photoresist and fabricating semiconductor devices

Номер патента: US20070093031A1. Автор: Min-Chieh Yang,Wen-Hsien Huang,Jiunn-Hsing Liao. Владелец: United Microelectronics Corp. Дата публикации: 2007-04-26.

Fabrication method of layer structure for mounting semiconductor device

Номер патента: US20180233442A1. Автор: Hung-Chi Chen,Fang-Lin Tsai,Yi-Feng Chang,Yi-Min Fu,Cheng-Jen Liu. Владелец: Siliconware Precision Industries Co Ltd. Дата публикации: 2018-08-16.

Method of detecting failure of a semiconductor device

Номер патента: US20190385918A1. Автор: ZHAN Zhan,Ji-Young Choi,Ju-Hyun Kim,Hwa-Sung Rhee,Sung-Gun Kang,Min-Seob KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-12-19.

Semiconductor device including fin and method for manufacturing the same

Номер патента: US11769803B2. Автор: Sungmin Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-09-26.

Semiconductor devices with nanowires and methods for fabricating the same

Номер патента: US11967595B2. Автор: Sang Yong Kim,Sang Jin HYUN,Jae Jung Kim,Young Suk CHAI,Hoon Joo NA. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-04-23.

Semiconductor device including fin and method for manufacturing the same

Номер патента: US20210305375A1. Автор: Sungmin Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-09-30.

Optical semiconductor device, optoelectronic device and method of manufacturing an optical semiconductor device

Номер патента: WO2023165869A1. Автор: Jens Hofrichter. Владелец: Ams-Osram Ag. Дата публикации: 2023-09-07.

Substrate for semiconductor devices, method of manufacturing substrate for semiconductor devices, and solid-state imaging device

Номер патента: US20150263212A1. Автор: Hideo Numata,Mokuji Kageyama,Shinji Uya,Nagataka Tanaka. Владелец: Toshiba Corp. Дата публикации: 2015-09-17.

Method of forming ferroelectric film, ferroelectric memory, method of manufacturing the same, semiconductor device, and method of manufacturing the same

Номер патента: US20040080991A1. Автор: Tatsuo Sawasaki. Владелец: Seiko Epson Corp. Дата публикации: 2004-04-29.

Image sensor devices, methods of manufacture thereof, and semiconductor device manufacturing methods

Номер патента: US09748304B2. Автор: Szu-Ying Chen,Dun-Nian Yaung,Jen-Cheng Liu,Jeng-Shyan Lin,Shu-Ting Tsai,U-Ting CHEN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-08-29.

Semiconductor devices, image sensors, and methods of manufacture thereof

Номер патента: US09859326B2. Автор: JHY-JYI SZE,Yeur-Luen Tu,Cheng-ta Wu,Sheng-Chau Chen,Chih-Hui Huang,Tung-Ting Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-01-02.

Semiconductor devices including capacitor and methods of manufacturing the semiconductor devices

Номер патента: US20230084276A1. Автор: Hyunsuk Lee,Gihee CHO,Sangyeol KANG,Jungoo Kang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-03-16.

Methods of manufacturing capacitors for semiconductor devices

Номер патента: US09496328B2. Автор: Sun Ho Kim,Hyun Jun Kim,Young Geun Park,Se Hyoung Ahn,Chang Mu An,Bong Hyun Kim,Jong Bom Seo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-11-15.

Method of wafer-scale integration of semiconductor devices and semiconductor device

Номер патента: US09608035B2. Автор: Franz Schrank,Cathal Cassidy,Joerg Siegert. Владелец: ams AG. Дата публикации: 2017-03-28.

Semiconductor device contact pad and method of contact pad fabrication

Номер патента: US12034027B2. Автор: Hui Zang. Владелец: Omnivision Technologies Inc. Дата публикации: 2024-07-09.

Semiconductor device, solid-state image sensor, methods of manufacturing the same, and camera

Номер патента: US09412778B2. Автор: Hideaki Ishino. Владелец: Canon Inc. Дата публикации: 2016-08-09.

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Номер патента: US09431476B2. Автор: Ji-Young Kim,Seung-Jun Lee,Hoon Jeong,Jun-Soo Lee,Sung-eui Kim,Young-Seung Cho,Chan-Won Kim,Jong-bom Seo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-08-30.

Integrated semiconductor devices with single crystalline beam, methods of manufacture and design structure

Номер патента: US09758365B2. Автор: Anthony K. Stamper,David L. Harame. Владелец: Globalfoundries Inc. Дата публикации: 2017-09-12.

Method of separating a wafer of semiconductor devices

Номер патента: US09608016B2. Автор: Stefano Schiaffino,Grigoriy Basin,Jipu Lei,Alexander H. Nickel. Владелец: Koninklijke Philips NV. Дата публикации: 2017-03-28.

Semiconductor device, electronic apparatus, and method for manufacturing semiconductor device

Номер патента: US12074182B2. Автор: Masaki Hatano. Владелец: Sony Semiconductor Solutions Corp. Дата публикации: 2024-08-27.

Method of producing semiconductor device, solid-state imaging device, method of producing electric apparatus, and electric apparatus

Номер патента: US20140038341A1. Автор: Yasufumi Miyoshi. Владелец: Sony Corp. Дата публикации: 2014-02-06.

Method of producing semiconductor device, solid-state imaging device, method of producing electric apparatus, and electric apparatus

Номер патента: US20090057798A1. Автор: Yasufumi Miyoshi. Владелец: Sony Corp. Дата публикации: 2009-03-05.

Semiconductor device and method of fabricating the same

Номер патента: US09607985B1. Автор: Chen-Ming Huang,I-Ming Tseng,Wen-An Liang. Владелец: United Microelectronics Corp. Дата публикации: 2017-03-28.

Semiconductor Devices, Image Sensors, and Methods of Manufacture Thereof

Номер патента: US20150214267A1. Автор: JHY-JYI SZE,Yeur-Luen Tu,Cheng-ta Wu,Sheng-Chau Chen,Chih-Hui Huang,Tung-Ting Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2015-07-30.

Semiconductor device and method of forming the same

Номер патента: US09524967B1. Автор: Yu-Ping Wang,Chien-Ming Lai,Ya-Huei Tsai,Ching-Hsiang Chiu,Hao-Yeh Liu,Mon-Sen Lin. Владелец: United Microelectronics Corp. Дата публикации: 2016-12-20.

Semiconductor device interconnection systems and methods

Номер патента: WO2020264037A1. Автор: Richard E. Bornfreund,Edward K. Huang. Владелец: Flir Commercial Systems, Inc.. Дата публикации: 2020-12-30.

Semiconductor device, electronic apparatus, and method for manufacturing semiconductor device

Номер патента: US20230024469A1. Автор: Masaki Iwamoto,Kouhei Sonoda. Владелец: Sony Semiconductor Solutions Corp. Дата публикации: 2023-01-26.

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Номер патента: US20150303227A1. Автор: Hideaki Ishino. Владелец: Canon Inc. Дата публикации: 2015-10-22.

Methods of preparing layouts for semiconductor devices, photomasks formed using the layouts, and semiconductor devices fabricated using the photomasks

Номер патента: US20150261905A1. Автор: HongSoo KIM,Juyeon Lee,HunKook LEE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2015-09-17.

Semiconductor device having the insulating layers cover a bottom portion of the fin shaped structure

Номер патента: US09728397B1. Автор: Hsu Ting,Chun-Wei Yu,Chueh-Yang Liu,Yu-Ren Wang. Владелец: United Microelectronics Corp. Дата публикации: 2017-08-08.

Semiconductor devices having fuses and methods of forming the same

Номер патента: US7510914B2. Автор: Jong-Kyu Kim,Hyun-Chul Yoon,Jang-Bin Yim,Sang-Dong Kwon,Sung-Gil Choi. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2009-03-31.

Integrated semiconductor devices with single crystalline beam, methods of manufacture and design structure

Номер патента: GB2509680A. Автор: Anthony K Stamper,David L Harame. Владелец: International Business Machines Corp. Дата публикации: 2014-07-09.

Semiconductor device interconnection systems and methods

Номер патента: US11916039B2. Автор: Richard E. Bornfreund,Edward K. Huang. Владелец: Teledyne Flir Commercial Systems Inc. Дата публикации: 2024-02-27.

Integrated semiconductor devices with single crystalline beam, methods of manufacture and design structure

Номер патента: US20130119490A1. Автор: Stephen E. Luce,Anthony K. Stamper,David L. Harame. Владелец: International Business Machines Corp. Дата публикации: 2013-05-16.

Integrated semiconductor devices with single crystalline beam, methods of manufacture and design structure

Номер патента: US20140008741A1. Автор: Stephen E. Luce,Anthony K. Stamper,David L. Harame. Владелец: International Business Machines Corp. Дата публикации: 2014-01-09.

Semiconductor device, imaging apparatus, and method for manufacturing semiconductor device

Номер патента: US11942495B2. Автор: Atsushi Tsukada,Hirotaka Kobayashi,Hiroyuki Shigeta,Koyo Hosokawa,Shigekazu Ishii,Daisuke Chino,Hirohisa Yasukawa,Kosuke Hareyama,Mitsuhito Kanatake,Kiyohisa Sakai,Ninao Sato,Yutaka OOTAKI,Yuki Yamane. Владелец: Sony Semiconductor Solutions Corp. Дата публикации: 2024-03-26.

Semiconductor device including capacitor and method of forming the same

Номер патента: US11411069B2. Автор: Cheol Seong Hwang,Han Jin Lim,Sang Yeol Kang,Kyu Ho Cho. Владелец: SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION. Дата публикации: 2022-08-09.

Semiconductor device including capacitor and method of forming the same

Номер патента: US20210296430A1. Автор: Akira Kaneko. Владелец: Micron Technology Inc. Дата публикации: 2021-09-23.

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Номер патента: US20110250741A1. Автор: Yasufumi Miyoshi. Владелец: Sony Corp. Дата публикации: 2011-10-13.

Methods of fabricating a capacitor and semiconductor device

Номер патента: US20230107346A1. Автор: Hyunjun Kim,Yukyung Shin,Cheoljin Cho,Changhwa JUNG,Jongbeom SEO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-04-06.

Semiconductor device and method of forming the same

Номер патента: US09698059B2. Автор: Chia-Fu Hsu,Tian Choy Gan,Chu-Yun Hsiao. Владелец: United Microelectronics Corp. Дата публикации: 2017-07-04.

Semiconductor component and method of manufacture

Номер патента: US20080277694A1. Автор: Prasad Venkatraman,Zia Hossain,Francine Y. Robb. Владелец: Individual. Дата публикации: 2008-11-13.

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Номер патента: US20210242050A1. Автор: Hsih-Yang Chiu. Владелец: Nanya Technology Corp. Дата публикации: 2021-08-05.

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Номер патента: US20190348568A1. Автор: Harald KÖNIG,Alfred Lell,Sven GERHARD,Jens Ebbecke,Clemens Vierheilig. Владелец: OSRAM Opto Semiconductors GmbH. Дата публикации: 2019-11-14.

Semiconductor device and method of manufacturing the same semiconductor device

Номер патента: US09865502B2. Автор: Kenro Nakamura. Владелец: Toshiba Memory Corp. Дата публикации: 2018-01-09.

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Номер патента: EP1604401A1. Автор: Josephus A. A. Den Ouden. Владелец: KONINKLIJKE PHILIPS ELECTRONICS NV. Дата публикации: 2005-12-14.

Manufacturing apparatus of semiconductor device and management method of manufacturing apparatus of semiconductor device

Номер патента: US09958794B2. Автор: Eishi Shiobara. Владелец: Toshiba Corp. Дата публикации: 2018-05-01.

Materials, structures, and methods for optical and electrical III-nitride semiconductor devices

Номер патента: US09978894B2. Автор: Robbie J. Jorgenson. Владелец: Individual. Дата публикации: 2018-05-22.

Materials, structures, and methods for optical and electrical III-nitride semiconductor devices

Номер патента: US09608145B2. Автор: Robbie J. Jorgenson. Владелец: Individual. Дата публикации: 2017-03-28.

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Номер патента: US20030213426A1. Автор: Eiji Natori,Koichi Furuyama,Yuzo Tasaki. Владелец: Seiko Epson Corp. Дата публикации: 2003-11-20.

Methods of forming conductive materials on semiconductor devices, and methods of forming electrical interconnects

Номер патента: US09768134B2. Автор: Anilkumar Chandolu,Kenneth N. Hagen. Владелец: Micron Technology Inc. Дата публикации: 2017-09-19.

Method of manufacturing multi-die semiconductor devices and corresponding multi-die semiconductor device

Номер патента: US20240249955A1. Автор: Paolo Crema. Владелец: STMICROELECTRONICS SRL. Дата публикации: 2024-07-25.

Test architecture of semiconductor device, test system, and method of testing semicondurctor devices at wafer level

Номер патента: US09824946B2. Автор: Young-Yong Byun,Chi-wook Kim,Ho-sung Song. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-11-21.

Exposure methods using e-beams and methods of manufacturing masks and semiconductor devices therefrom

Номер патента: US09671686B2. Автор: Sang-Hee Lee,Jin Choi,In-kyun Shin,Byoung-Sup Ahn. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-06-06.

Method of manufacturing a semiconductor device including applying ultrasonic waves to a ball portion of the semiconductor device

Номер патента: US09508678B2. Автор: Naoki Kawanabe. Владелец: Renesas Electronics Corp. Дата публикации: 2016-11-29.

Vertical structure of semiconductor devices using nanotubes and method of making them

Номер патента: RU2342315C2. Автор: Тошихару ФУРУКАВА,Марк Чарлз ХЕЙКИ,Стивен Джон ХОЛМС,Дейвид Вацлав ХОРАК,Чарлз Уилль м КОУБУРГЕР III,Чарлз Уилльям КОУБУРГЕР III. Владелец: Интернэшнл Бизнес Машинз Корпорейшн. Дата публикации: 2008-12-27.

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Номер патента: US20240234249A1. Автор: Shing-Yih Shih. Владелец: Nanya Technology Corp. Дата публикации: 2024-07-11.

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Номер патента: US20240234252A1. Автор: Shing-Yih Shih. Владелец: Nanya Technology Corp. Дата публикации: 2024-07-11.

Method of manufacturing resin-encapsulated semiconductor device, and lead frame

Номер патента: US09679835B2. Автор: Shinya Kubota,Masaru Akino. Владелец: Ablic Inc. Дата публикации: 2017-06-13.

Board for mounting BGA semiconductor chip thereon, semiconductor device, and methods of fabricating such board and semiconductor device

Номер патента: US20050156326A1. Автор: Toshihide Ito. Владелец: NEC Toppan Circuit Solutions Inc. Дата публикации: 2005-07-21.

Method of forming ferroelectric film, ferroelectric memory, method of manufacturing the same, semiconductor device, and method of manufacturing the same

Номер патента: US6787371B2. Автор: Tatsuo Sawasaki. Владелец: Seiko Epson Corp. Дата публикации: 2004-09-07.

Semiconductor device, communication system, and method of manufacturing semiconductor device

Номер патента: US12015204B2. Автор: Hiroji Akahori. Владелец: Lapis Semiconductor Co Ltd. Дата публикации: 2024-06-18.

Semiconductor device, communication system, and method of manufacturing semiconductor device

Номер патента: US20240297445A1. Автор: Hiroji Akahori. Владелец: Lapis Semiconductor Co Ltd. Дата публикации: 2024-09-05.

Semiconductor devices, semiconductor packages, and methods of manufacturing the semiconductor devices

Номер патента: US11728297B2. Автор: ATSUSHI Fujisaki,Ho-Jin Lee,Kwang-jin Moon,Ju-Il Choi,Dong-Chan Lim,Ju-Bin Seo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-08-15.

Semiconductor devices, methods of manufacture thereof, and semiconductor device packages

Номер патента: US09773724B2. Автор: Szu Wei Lu,Jing-Cheng Lin,Po-Hao Tsai,Ying-Ching Shih,I-Ting Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-09-26.

Pattern structures in semiconductor devices and methods of forming pattern structures in semiconductor devices

Номер патента: US09558993B2. Автор: Jaehan Lee,Jaehwang SIM,Keonsoo Kim,Jaeho Min. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-01-31.

Printed circuit board, semiconductor device connection structure, and method of manufacturing a printed circuit board

Номер патента: US09549472B2. Автор: Ryuichi Shibutani. Владелец: Canon Inc. Дата публикации: 2017-01-17.

Method of manufacturing silicon carbide semiconductor device

Номер патента: US7989231B2. Автор: Yuuichi Takeuchi,Atsuya Akiba. Владелец: Denso Corp. Дата публикации: 2011-08-02.

Semiconductor device, electronic apparatus, and method for manufacturing semiconductor device

Номер патента: EP4391046A1. Автор: XIAOFENG Xu,Ming Wu,Eckart HOENE,Zhengyan HE,Luise PAWLAK. Владелец: Huawei Digital Power Technologies Co Ltd. Дата публикации: 2024-06-26.

Semiconductor devices including capacitors and methods of manufacturing the same

Номер патента: US20130207232A1. Автор: Hyung Ju JIN. Владелец: SK hynix Inc. Дата публикации: 2013-08-15.

Semiconductor device and manufacturing method of the semiconductor device

Номер патента: US20230301091A1. Автор: SUNG Wook Jung,Ji Hui Baek,Jang Hee Jung. Владелец: SK hynix Inc. Дата публикации: 2023-09-21.

Semiconductor device, semiconductor system, and method of controlling the semiconductor device

Номер патента: US20190140131A1. Автор: Tsuyoshi Waki. Владелец: Renesas Electronics Corp. Дата публикации: 2019-05-09.

Method of manufacturing stacked-type semiconductor device

Номер патента: US20090191666A1. Автор: Souu Kumagai. Владелец: Disco Corp. Дата публикации: 2009-07-30.

Methods of manufacturing multi-die semiconductor device packages and related assemblies

Номер патента: US09865578B2. Автор: Wei Zhou,Sony Varghese,Aibin Yu,Zhaohui Ma,Jonathan S. Hacker,Bret K. Street,Shijian Luo. Владелец: Micron Technology Inc. Дата публикации: 2018-01-09.

Method of manufacturing multi-die semiconductor devices

Номер патента: EP4016614A1. Автор: Paolo Crema. Владелец: STMICROELECTRONICS SRL. Дата публикации: 2022-06-22.

Method of making a low noise semiconductor device comprising a screening measurement

Номер патента: US5683917A. Автор: Cuong Tran,Ralph Francis Trambarulo,Samuel Suresh Martin. Владелец: Lucent Technologies Inc. Дата публикации: 1997-11-04.

Method of forming openings in a semiconductor device and a semiconductor device fabricated by the method

Номер патента: US20100291770A1. Автор: Massud Abubaker Aminpur,Scott Warrick,Lionel Riviere-Cazeaux,Will Conley. Владелец: Individual. Дата публикации: 2010-11-18.

Group-iii nitride semiconductor device, epitaxial substrate, and method of fabricating group-iii nitride semiconductor device

Номер патента: US20120299010A1. Автор: Masaki Ueno,Takao Nakamura,Takashi Kyono,Katsushi Akita,Yusuke Yoshizumi,Takamichi Sumitomo,Yohei Enya. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2012-11-29.

Optoelectronic semiconductor device comprising an al-containing layer and method of manufacturing the optoelectronic semiconductor device

Номер патента: WO2024184358A1. Автор: Xiaojun Chen,Jong Ho Na,Noor Afifa MOHD HANAFIAH,Muhammad Esmed Alif SAMSUDIN,Azharul Ariff KAMARULZAMAN. Владелец: Ams-Osram International Gmbh. Дата публикации: 2024-09-12.

Methods of reinforcing integrated circuitry of semiconductor devices and related semiconductor devices and packages

Номер патента: US20190393110A1. Автор: AJAY Kumar,John House,Hyunsoo Yeom. Владелец: Microchip Technology Inc. Дата публикации: 2019-12-26.

Semiconductor device testing apparatus and methods of testing and fabricating semiconductor device using the same

Номер патента: US20230366853A1. Автор: Donghyun Lee,Younghoon Sohn,Sung Yoon Ryu,Sooseok LEE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-11-16.

Semiconductor device qfn package and method of making thereof

Номер патента: US20230115182A1. Автор: Zhiming Li,Zhijie Wang,Meng Kong Lye,You Ge. Владелец: NXP USA Inc. Дата публикации: 2023-04-13.

Methods of forming conductive elements of semiconductor devices and of forming memory cells

Номер патента: US09865812B2. Автор: Nishant Sinha,Scott E. Sills,Sanh D. Tang,Whitney L. West,Rob B. Goodwin. Владелец: Micron Technology Inc. Дата публикации: 2018-01-09.

Integrated semiconductor device and wafer level method of fabricating the same

Номер патента: US09691725B2. Автор: Chia-Hua Chu,Alexander Kalnitsky,Chun-Wen Cheng,Kuei-Sung CHANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-06-27.

Surface mountable optoelectronic semiconductor device and method for manufacturing a surface mountable optoelectronic semiconductor devices

Номер патента: US12068281B2. Автор: Michael Schumann,Christian Leirer. Владелец: OSRAM OLED GmbH. Дата публикации: 2024-08-20.

Semiconductor device, memory cell and method of forming the same

Номер патента: US20240196764A1. Автор: Shao-Ming Yu,Bo-Jiun Lin,Tung-Ying Lee,Yu-Chao Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-06-13.

Semiconductor device and lead frame assembly/lead frame for making a semiconductor device

Номер патента: US20020047194A1. Автор: Yuichi Douki,Hideshi Hanada,Jun Sugimoto. Владелец: Individual. Дата публикации: 2002-04-25.

Semiconductor device with recess and method of making

Номер патента: US9916991B2. Автор: Yuichi Nakao,Yasuhiro Fuwa. Владелец: ROHM CO LTD. Дата публикации: 2018-03-13.

Semiconductor device, manufacturing method and controlling method of semiconductor device

Номер патента: US20180083026A1. Автор: Kouji Matsuo. Владелец: Toshiba Memory Corp. Дата публикации: 2018-03-22.

Methods of forming hydrophobic surfaces on semiconductor device structures, methods of forming semiconductor device structures, and semiconductor device structures

Номер патента: US20130292647A1. Автор: Prashant Raghu,Ian C. Laboriante. Владелец: Micron Technology Inc. Дата публикации: 2013-11-07.

Semiconductor device with recess and method of making

Номер патента: US09916991B2. Автор: Yuichi Nakao,Yasuhiro Fuwa. Владелец: ROHM CO LTD. Дата публикации: 2018-03-13.

Semiconductor device, semiconductor package, and method for manufacturing semiconductor device

Номер патента: US09502381B2. Автор: Jing-en Luan. Владелец: STMICROELECTRONICS PTE LTD. Дата публикации: 2016-11-22.

Method for producing semiconductor device, semiconductor package, and method for producing semiconductor package

Номер патента: US20220037206A1. Автор: Toyoji Sawada. Владелец: Socionext Inc. Дата публикации: 2022-02-03.

Method for producing semiconductor device, semiconductor package, and method for producing semiconductor package

Номер патента: US11621193B2. Автор: Toyoji Sawada. Владелец: Socionext Inc. Дата публикации: 2023-04-04.

Method for producing semiconductor device, semiconductor package, and method for producing semiconductor package

Номер патента: US20230207391A1. Автор: Toyoji Sawada. Владелец: Socionext Inc. Дата публикации: 2023-06-29.

Lead frame, method of manufacturing lead frame, semiconductor device and method of manufacturing semiconductor device

Номер патента: US5977615A. Автор: Yukio Yamaguchi,Toru Nomura,Masanori Minamio,Akira Oga. Владелец: Matsushita Electronics Corp. Дата публикации: 1999-11-02.

Methods of forming contacts for a semiconductor device structure, and related methods of forming a semiconductor device structure

Номер патента: US09564442B2. Автор: Wolfgang Mueller,Sanh D. Tang,Sourabh Dhir,Dylan R. MACMASTER. Владелец: Micron Technology Inc. Дата публикации: 2017-02-07.

Semiconductor device including capacitor and method of fabricating the same

Номер патента: US09673272B2. Автор: Younsoo Kim,Yunjung Choi,Hanjin Lim,Jin-Su Lee,Se Hoon Oh. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-06-06.

Semiconductor device and method of manufacturing the same semiconductor device

Номер патента: US20160268163A1. Автор: Kenro Nakamura. Владелец: Toshiba Corp. Дата публикации: 2016-09-15.

Semiconductor device, and life prediction circuit and life prediction method for semiconductor device

Номер патента: US20070296040A1. Автор: Takashi Igarashi,Fumitaka Tametani. Владелец: Mitsubishi Electric Corp. Дата публикации: 2007-12-27.

Semiconductor device having antenna and method for manufacturing thereof

Номер патента: US09559129B2. Автор: Shunpei Yamazaki,Junya Maruyama,Kyosuke Ito,Takuya Tsurume. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2017-01-31.

Semiconductor device, semiconductor body and method of manufacturing thereof

Номер патента: WO2004079822A1. Автор: Josephus A. A. Den Ouden. Владелец: KONINKLIJKE PHILIPS ELECTRONICS N.V.. Дата публикации: 2004-09-16.

Semiconductor device, a method of manufacturing a semiconductor device and a testing method of the same

Номер патента: US7816154B2. Автор: Yoshiaki Nakajima,Tasuke Tanaka,Akira Seito,Kanya HAMADA. Владелец: Renesas Electronics Corp. Дата публикации: 2010-10-19.

Semiconductor Device, A Method of Manufacturing A Semiconductor Device and A Testing Method of the Same

Номер патента: US20110018573A1. Автор: Yoshiaki Nakajima,Tasuke Tanaka,Akira Seito,Kanya HAMADA. Владелец: Renesas Electronics Corp. Дата публикации: 2011-01-27.

Semiconductor device having diode and method of forming the same

Номер патента: US20140183435A1. Автор: Dong-Bok Lee,Sea-Phyo KIM,Chan-Min LEE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2014-07-03.

Semiconductor device, heat conductor, and method for manufacturing semiconductor device

Номер патента: US09716053B2. Автор: Yoshihiro Ihara,Kei Murayama. Владелец: Shinko Electric Industries Co Ltd. Дата публикации: 2017-07-25.

Methods of forming 3-d integrated semiconductor devices having intermediate heat spreading capabilities

Номер патента: US20160190104A1. Автор: Thomas Werner,Frank Feustel,Michael Grillberger. Владелец: Globalfoundries Inc. Дата публикации: 2016-06-30.

Method of forming insulating film in semiconductor device

Номер патента: US20050014389A1. Автор: Sung Hwang. Владелец: Individual. Дата публикации: 2005-01-20.

Method of forming isolation structure of semiconductor device for preventing excessive loss during recess gate formation

Номер патента: US20090029521A1. Автор: Dong Sun Sheen,Sang Tae Ahn,Seok Pyo Song,Hyeon Ju An. Владелец: Individual. Дата публикации: 2009-01-29.

Deposition method and a deposition apparatus of fine particles, a forming method and a forming apparatus of carbon nanotubes, and a semiconductor device and a manufacturing method of the same

Номер патента: US20150207074A1. Автор: Noriyoshi Shimizu,Yuji Awano. Владелец: Fujitsu Ltd. Дата публикации: 2015-07-23.

Deposition method and a deposition apparatus of fine particles, a forming method and a forming apparatus of carbon nanotubes, and a semiconductor device and a manufacturing method of the same

Номер патента: US20130109170A1. Автор: Noriyoshi Shimizu,Shintaro Sato,Yuji Awano. Владелец: Fujitsu Ltd. Дата публикации: 2013-05-02.

Method of wire bonding of a semiconductor device for resolving oxidation of copper bonding pad

Номер патента: US20040082174A1. Автор: Yu-Chun Huang,Ning Huang,Wen-Tsung Weng,Wen-Lo Shieh,Hui-Pin Chen,Fu-Yu Huang,Chia-Ling Lu,Chih-Yu Tsai,Shu-Wan Lu,Mei-Hua Chen,Yu-Ju Wang,Ya-Hsin Tseng,Zhe-Sung Wu,Tzu-Lin Liu. Владелец: Individual. Дата публикации: 2004-04-29.

Semiconductor device metallization systems and methods

Номер патента: US09548241B2. Автор: Ming-Han Lee,Shau-Lin Shue,Tung-Ching Tseng,Hsiang-Huan Lee,Wen-Cheng Yang,Hai-Ching Chen,Chung-En Kao,Hsin-Yen Huang,Keith Kuang-Kuo Koai. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-01-17.

Semiconductor-device mounted board and method of manufacturing the same

Номер патента: US20110127656A1. Автор: Toshio Kobayashi,Takashi Kurihara,Takaharu Yamano. Владелец: Shinko Electric Industries Co Ltd. Дата публикации: 2011-06-02.

Semiconductor device, semiconductor module, and method for manufacturing semiconductor module

Номер патента: US20240355693A1. Автор: Katsuya Sato,Shogo Minami,Keiichiro Matsuo,Tomohiro Iguchi. Владелец: Toshiba Corp. Дата публикации: 2024-10-24.

Semiconductor device, semiconductor package, and method of manufacturing the same

Номер патента: US20220254699A1. Автор: Tun-Ching PI. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2022-08-11.

Semiconductor device and method of manufacturing such a semiconductor device

Номер патента: EP1784857A1. Автор: Robertus A. M. Wolters,Robert Lander,Jacob C. Hooker. Владелец: KONINKLIJKE PHILIPS ELECTRONICS NV. Дата публикации: 2007-05-16.

Method of producing a radiation sensor semiconductor device comprising a multiple colour filter

Номер патента: WO2014127988A1. Автор: Rainer Minixhofer. Владелец: ams AG. Дата публикации: 2014-08-28.

Semiconductor device, semiconductor apparatus and method for manufacturing semiconductor device

Номер патента: US09977074B2. Автор: Tomoharu Fujii. Владелец: Shinko Electric Industries Co Ltd. Дата публикации: 2018-05-22.

Method of producing a radiation sensor semiconductor device comprising a multiple color filter

Номер патента: US09837573B2. Автор: Rainer Minixhofer. Владелец: ams AG. Дата публикации: 2017-12-05.

Method of mounting semiconductor element, and semiconductor device

Номер патента: US09615464B2. Автор: Takashi Kubota,Hidehiko Kira,Masayuki Kitajima,Takatoyo Yamakami. Владелец: Fujitsu Ltd. Дата публикации: 2017-04-04.

Method of manufacturing multi-die semiconductor devices and corresponding multi-die semiconductor device

Номер патента: US11948806B2. Автор: Paolo Crema. Владелец: STMICROELECTRONICS SRL. Дата публикации: 2024-04-02.

Method of manufacturing GaN-based semiconductor device

Номер патента: US8633087B2. Автор: Hideki Matsubara,Kuniaki Ishihara. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2014-01-21.

Resin-sealed semiconductor device, circuit member for use therein and method of manufacturing resin-sealed semiconductor device

Номер патента: US6025640A. Автор: Hiroshi Yagi,Masato Sasaki,Kazuyoshi Togashi. Владелец: DAI NIPPON PRINTING CO LTD. Дата публикации: 2000-02-15.

Semiconductor device having inductor and method of manufacturing thereof

Номер патента: US20240071911A1. Автор: Yu-Jen Wang,Wei-Cheng Wu,Li-Feng Teng,Wen-Tuo Huang,Harry-HakLay Chuang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-02-29.

Method of forming fine pattern of semiconductor device

Номер патента: US09812335B2. Автор: Jaehong Park,Dongchan Kim,Jinyoung Park,Je-woo Han,Sungyeon KIM,Junho Yoon,KyungYub JEON,Kyohyeok KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-11-07.

Semiconductor device, layout design and method for manufacturing a semiconductor device

Номер патента: US09449919B2. Автор: Jian-Hong Lin,Shiou-Fan CHEN,Chwei-Ching Chiu,Yung-Huei Lee,Hsin-Chun Chang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-09-20.

Semiconductor device with waveguide and method therefor

Номер патента: US11837560B2. Автор: Michael B. Vincent,Scott M. Hayes,Maristella Spella,Giorgio Carluccio. Владелец: NXP USA Inc. Дата публикации: 2023-12-05.

Semiconductor device with waveguide and method therefor

Номер патента: US20210391285A1. Автор: Michael B. Vincent,Scott M. Hayes,Maristella Spella,Giorgio Carluccio. Владелец: NXP USA Inc. Дата публикации: 2021-12-16.

Semiconductor device with waveguide and method therefor

Номер патента: US20210183796A1. Автор: Michael B. Vincent,Scott M. Hayes,Maristella Spella,Giorgio Carluccio. Владелец: NXP USA Inc. Дата публикации: 2021-06-17.

Semiconductor device with waveguide and method therefor

Номер патента: EP3840114A1. Автор: Michael B. Vincent,Scott M. Hayes,Maristella Spella,Giorgio Carluccio. Владелец: NXP USA Inc. Дата публикации: 2021-06-23.

Method of forming isolation film of semiconductor device

Номер патента: US20040127035A1. Автор: Sung Lee. Владелец: Hynix Semiconductor Inc. Дата публикации: 2004-07-01.

Wavelet system and method for ameliorating misregistration and asymmetry of semiconductor devices

Номер патента: US12080610B2. Автор: Daria Negri,Lilach SALTOUN. Владелец: KLA Corp. Дата публикации: 2024-09-03.

Structure and method for stabilizing leads in wire-bonded semiconductor devices

Номер патента: US09824959B2. Автор: Jerry Gomez Cayabyab,Dolores Babaran Milo,Mark Gerald Rosario Pinlac,Bobby Johns Lansangan Villacarlos,Juan Carlo Aro Rimando. Владелец: Texas Instruments Inc. Дата публикации: 2017-11-21.

Polymers for hard masks, hard mask compositions including the same, and methods for forming a pattern of a semiconductor device using a hard mask composition

Номер патента: US09676892B2. Автор: Songse YI,Jungsik CHOI,Myeong koo Kim,Ahreum CHOI,Boodeuk Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-06-13.

Semiconductor Device, Memory Module, and Method of Manufacturing a Semiconductor Device

Номер патента: US20090273044A1. Автор: Rainer Leuschner. Владелец: Individual. Дата публикации: 2009-11-05.

Semiconductor device with fuses and method of manufacturing same

Номер патента: EP1287557A2. Автор: Hermanus J. Effing,Alfred R. Hamstra. Владелец: KONINKLIJKE PHILIPS ELECTRONICS NV. Дата публикации: 2003-03-05.

Memory cell, method of forming the same, and semiconductor device having the same

Номер патента: US20210328141A1. Автор: Tung-Ying Lee,Yu-Chao Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-10-21.

Method of manufacturing a multilayer semiconductor device

Номер патента: US4596604A. Автор: Shin-ichi Ogawa,Yasuaki Terui,Shigenobu Akiyama. Владелец: Agency of Industrial Science and Technology. Дата публикации: 1986-06-24.

Method of manufacturing substrates for semiconductor devices, corresponding substrate and semiconductor device

Номер патента: EP4125121A1. Автор: Mauro Mazzola. Владелец: STMICROELECTRONICS SRL. Дата публикации: 2023-02-01.

Semiconductor device and a corresponding method of manufacturing semiconductor devices

Номер патента: US20190035741A1. Автор: Paolo Colpani,Samuele Sciarrillo,Ivan Venegoni,Francesca Milanesi. Владелец: STMICROELECTRONICS SRL. Дата публикации: 2019-01-31.

Method of forming buried wiring in semiconductor device

Номер патента: US20050186795A1. Автор: Kazuhide Abe. Владелец: Individual. Дата публикации: 2005-08-25.

Semiconductor device and a corresponding method of manufacturing semiconductor devices

Номер патента: US20190035740A1. Автор: Paolo Colpani,Samuele Sciarrillo,Ivan Venegoni. Владелец: STMICROELECTRONICS SRL. Дата публикации: 2019-01-31.

Method of manufacturing III-nitride semiconductor devices

Номер патента: US6486050B1. Автор: Ching-ting Lee. Владелец: Opto Tech Corp. Дата публикации: 2002-11-26.

Semiconductor device package assemblies and methods of manufacture

Номер патента: US20240162110A1. Автор: Seungwon Im,Oseob Jeon,Byoungok Lee,Jeungdae Kim. Владелец: Semiconductor Components Industries LLC. Дата публикации: 2024-05-16.

Method of manufacturing 3-D semiconductor device

Номер патента: US10636699B2. Автор: Zongliang Huo. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2020-04-28.

Semiconductor device having fuse and method for checking whether the fuse is fused

Номер патента: US6121820A. Автор: Nobuo Shishikura. Владелец: Toshiba Corp. Дата публикации: 2000-09-19.

Image processing apparatus and method for inspecting defects of enclosures of semiconductor devices

Номер патента: US5568564A. Автор: Takayuki Ozaki. Владелец: Toshiba Corp. Дата публикации: 1996-10-22.

Semiconductor device, semiconductor package, and methods of manufacturing the same

Номер патента: US11901256B2. Автор: Ching-Wen Hsiao,Ming-Da Cheng,Wei-Hung Lin,Chang-Jung Hsueh,Cheng-Nan Lin,Wan-Yu Chiang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-02-13.

Semiconductor device, semiconductor package, and methods of manufacturing the same

Номер патента: US20230068485A1. Автор: Ching-Wen Hsiao,Ming-Da Cheng,Wei-Hung Lin,Chang-Jung Hsueh,Cheng-Nan Lin,Wan-Yu Chiang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-03-02.

Semiconductor device, semiconductor laser, and method of producing a semiconductor device

Номер патента: US11876349B2. Автор: Masahiro Murayama. Владелец: Sony Semiconductor Solutions Corp. Дата публикации: 2024-01-16.

Semiconductor device, semiconductor package, and methods of manufacturing the same

Номер патента: US20240145327A1. Автор: Ching-Wen Hsiao,Ming-Da Cheng,Wei-Hung Lin,Chang-Jung Hsueh,Cheng-Nan Lin,Wan-Yu Chiang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-05-02.

Electrical components and methods and systems of manufacturing electrical components

Номер патента: WO2014055270A1. Автор: Helge Schmidt,Marjorie Kay Myers,Soenke Sachs,Eva Henschel,Michael Leidner,Dominique Marie M. FRECKMANN. Владелец: Tyco Electronics AMP GMBH. Дата публикации: 2014-04-10.

Semiconductor Device Comprising a Fuse Structure and a Method for Manufacturing such Semiconductor Device

Номер патента: US20140127895A1. Автор: Wolfgang Walter,Uwe Seidel,Hubert Werthmann,Michael Schrenk,Gabriele Bettineschi. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2014-05-08.

Method of making openings in a semiconductor device with reduced residue by transferring layers

Номер патента: US09431291B2. Автор: Keisuke Nakazawa. Владелец: Toshiba Corp. Дата публикации: 2016-08-30.

Semiconductor device, test system and method of the same

Номер патента: US9859176B1. Автор: Hao Chen,Mill-Jer Wang,Hung-Chih Lin,Tang-Jung CHIU. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-01-02.

Semiconductor device having capacitor and method of manufacturing the same

Номер патента: US6399457B2. Автор: Hyeon-deok Lee,Myoung-Bum Lee,Byung-lyul Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2002-06-04.

Method of manufacturing resin-encapsulated semiconductor device package using photoresist or pre-peg lead frame dam bars

Номер патента: US5258331A. Автор: Takashi Nakashima,Kenji Masumoto. Владелец: Texas Instruments Inc. Дата публикации: 1993-11-02.

Method of manufacturing integrated circuit semiconductor device

Номер патента: US4806457A. Автор: Masayuki Yanagisawa. Владелец: NEC Corp. Дата публикации: 1989-02-21.

Method of manufacturing a tab semiconductor device

Номер патента: US5972739A. Автор: Koji Matsui,Yoshitsugu Funada. Владелец: NEC Corp. Дата публикации: 1999-10-26.

Method of manufacturing radiation-emitting semiconductor devices

Номер патента: US5358897A. Автор: Adriaan Valster,Coen T. H. F. Liedenbaum. Владелец: US Philips Corp. Дата публикации: 1994-10-25.

Nitride semiconductor substrate, semiconductor device, and methods for manufacturing nitride semiconductor substrate and semiconductor device

Номер патента: US20130252401A1. Автор: Naoki Matsumoto,Hidenori Mikami,Sayuri Yamaguchi. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2013-09-26.

Multiplexer for SDFQ having differently-sized scan and data transistors, semiconductor device including same and methods of manufacturing same

Номер патента: US11821947B1. Автор: Jerry Chang Jui Kao,Qingchao Meng,Huaixin XIAN,Changlin Huang. Владелец: TSMC Nanjing Co Ltd. Дата публикации: 2023-11-21.

Semiconductor device and a manufacturing method of the same

Номер патента: US20060220221A1. Автор: Yoshihiko Shimanuki. Владелец: Renesas Technology Corp. Дата публикации: 2006-10-05.

Method of preventing dielectric breakdown of semiconductor device and semiconductor device preventing dielectric breakdown

Номер патента: US20070253276A1. Автор: Tsuneo Ochi. Владелец: Kawasaki Microelectronics Inc. Дата публикации: 2007-11-01.

Method of controlling performance boosting of semiconductor device and semiconductor device performing the method

Номер патента: US20210057420A1. Автор: Sangkyu Kim,Jungwook Kim,Jonglae Park,Hyunju KANG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-02-25.

Nitride semiconductor substrate, semiconductor device, and methods for manufacturing nitride semiconductor substrate and semiconductor device

Номер патента: US20110068434A1. Автор: Naoki Matsumoto,Hidenori Mikami,Sayuri Yamaguchi. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2011-03-24.

Multiplexer for sdfq having differently-sized scan and data transistors, semiconductor device including same and methods of manufacturing same

Номер патента: US20230408582A1. Автор: Jerry Chang Jui Kao,Qingchao Meng,Huaixin XIAN,Changlin Huang. Владелец: TSMC Nanjing Co Ltd. Дата публикации: 2023-12-21.

System and method of determining pulse properties of semiconductor device

Номер патента: US7495456B2. Автор: Hideki Horii,Yong-ho Ha. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2009-02-24.

Method of monitoring a semiconductor device fabrication process and method of fabricating a semiconductor device using the same

Номер патента: US20220068728A1. Автор: Youngjoo Lee,Taekyun KANG,Hyowon Bae,Sang Yoon Han,Jitae PARK,Doo Young Gwak,Aekyung KIM,Kyunggon You,Seongjin IN. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-03-03.

Method of designing arrangement of tsv in stacked semiconductor device and designing system for arrangement of tsv in stacked semiconductor device

Номер патента: US20140258949A1. Автор: Myung-Soo JANG,Jae-Rim LEE,Jong-Wha Chong,Min-Beom KIM,Wen Rui LI,Cheol-Jon JANG. Владелец: Industry University Cooperation Foundation IUCF HYU. Дата публикации: 2014-09-11.

Semiconductor device including tsv and method of manufacturing the same

Номер патента: US20200273780A1. Автор: Sang Jun Park,Eun Ji Kim,Sung Dong Cho,Dong Chan Lim,Kwang Wuk Park,Hak Seung Lee,Dae Suk Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-08-27.

Apparatus and method for measuring local surface temperature of semiconductor device

Номер патента: US20100322285A1. Автор: Rolf-Peter Vollertsen. Владелец: Individual. Дата публикации: 2010-12-23.

Apparatus and method for measuring local surface temperature of semiconductor device

Номер патента: US8215830B2. Автор: Rolf-Peter Vollertsen. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2012-07-10.

Stack type semiconductor device and method of testing the stack type semiconductor device

Номер патента: US20230307420A1. Автор: Seong Hwi Song. Владелец: SK hynix Inc. Дата публикации: 2023-09-28.

Method of manufacturing and inspecting semiconductor devices

Номер патента: CA2126292A1. Автор: Takashi Iwasaki,Yasuhiro Iguchi,Nobuhisa Tanaka,Shun-Ichi Yoneyama. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 1994-12-24.

Method of forming fine pattern of semiconductor device using SiGe layer as sacrificial layer, and method of forming self-aligned contacts using the same

Номер патента: US20050282363A1. Автор: Chang-jin Kang,Kyeong-koo Chi,Cheol-kyu Lee,Keun-Hee Bai. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2005-12-22.

Semiconductor device positioning system and method for semiconductor device positioning

Номер патента: EP3472670A1. Автор: Thijs Kniknie,Jozef Petrus Wilhelmus STOKKERMANS. Владелец: Nexperia BV. Дата публикации: 2019-04-24.

Film carrier, semiconductor device using same and method for mounting semiconductor element

Номер патента: US5821626A. Автор: Masakazu Sugimoto,Shoji Morita,Kazuo Ouchi,Atsushi Hino. Владелец: Nitto Denko Corp. Дата публикации: 1998-10-13.

Semiconductor device including crack detection structure and method of detecting progressive crack in semiconductor device

Номер патента: US20240222205A1. Автор: Sungho Park,Younggu KANG,Chulhee JEON,Inho LIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-04.

Stacked semiconductor device test circuits and methods of use

Номер патента: US20220344223A1. Автор: Jen-Yuan Chang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-10-27.

Methods for assembling semiconductor devices in superimposed relation with adhesive material defining the distance adjacent semiconductor devices are spaced apart from one another

Номер патента: US20050067684A1. Автор: James Derderian. Владелец: Derderian James M.. Дата публикации: 2005-03-31.

Stacked semiconductor device test circuits and methods of use

Номер патента: US11935798B2. Автор: Jen-Yuan Chang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-03-19.

Semiconductor device, semiconductor module, and method of operating semiconductor device

Номер патента: US20210011077A1. Автор: Yoichi Kawano,Ikuo Soga. Владелец: Fujitsu Ltd. Дата публикации: 2021-01-14.

Semiconductor device, semiconductor module, and method of operating semiconductor device

Номер патента: US20220413039A1. Автор: Yoichi Kawano,Ikuo Soga. Владелец: Fujitsu Ltd. Дата публикации: 2022-12-29.

Stacked semiconductor device test circuits and methods of use

Номер патента: US20240178078A1. Автор: Jen-Yuan Chang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-05-30.

Semiconductor device and a manufacturing method of the same

Номер патента: US20070075414A1. Автор: Takashi Miwa,Yasumi Tsutsumi. Владелец: Renesas Technology Corp. Дата публикации: 2007-04-05.

Separating semiconductor devices from substrate by etching graded composition release layer disposed between semiconductor devices and substrate including forming protuberances that reduce stiction

Номер патента: US20140048123A1. Автор: Gregory N. Nielson,Anna Tauke-Pedretti,Jose Luis Cruz-Campa,Jeffrey G. Cederberg. Владелец: Sandia Corp. Дата публикации: 2014-02-20.

Semiconductor device and a manufacturing method of the same

Номер патента: US20110269268A1. Автор: Hiroshi Ono,Tamaki Wada,Naoki Kawanabe,Nobuyasu MUTO. Владелец: Renesas Electronics Corp. Дата публикации: 2011-11-03.

Method of selectively depositing glass on semiconductor devices

Номер патента: CA1038329A. Автор: Robert B. Comizzoli. Владелец: RCA Corp. Дата публикации: 1978-09-12.

Method of forming beam leads on semiconductor devices and integrated circuits

Номер патента: US3653999A. Автор: Clyde Rhea Fuller. Владелец: Texas Instruments Inc. Дата публикации: 1972-04-04.

Method of the film substrate, a method of the semiconductor device using the same, a method of the display device using the same, and a method of the electric device using the same

Номер патента: US20060079026A1. Автор: Hideaki Adachi,Nobukazu Koizumi,Keiichiro Hayashi,Tsutomu Matsuhira,Tadahiro Nishigawa. Владелец: MARUWA Corp. Дата публикации: 2006-04-13.

Organic silica film and method for forming same, composition for forming insulating film of semiconductor device and method for producing same, wiring structure and semiconductor device

Номер патента: US20100007025A1. Автор: Tatsuya Yamanaka,Masahiro Akiyama,Hisashi Nakagawa,Terukazu Kokubo,Youhei Nobe. Владелец: JSR Corp. Дата публикации: 2010-01-14.

Method of manufacturing interconnection and semiconductor device

Номер патента: US8940628B2. Автор: Tadashi Sakai,Yuichi Yamazaki. Владелец: Toshiba Corp. Дата публикации: 2015-01-27.

Semiconductor device, semiconductor wafer and manufacturing method of semiconductor device

Номер патента: US9818701B2. Автор: Taiji Ema,Kazutaka Yoshizawa,Takuya Moriki. Владелец: Fujitsu Semiconductor Ltd. Дата публикации: 2017-11-14.

Semiconductor device driving circuit and method of testing the same

Номер патента: US20140139245A1. Автор: Daisuke Hirata. Владелец: Mitsubishi Electric Corp. Дата публикации: 2014-05-22.

Semiconductor device with an isolation structure coupled to a cover of the semiconductor device

Номер патента: US20160240488A1. Автор: Michael E. Watts,David F. Abdo,Lakshminarayn Viswanathan. Владелец: FREESCALE SEMICONDUCTOR INC. Дата публикации: 2016-08-18.

Semiconductor device having opening and method of fabricating the same

Номер патента: US20040048489A1. Автор: Takashi Goto,Yoshinari Ichihashi. Владелец: Sanyo Electric Co Ltd. Дата публикации: 2004-03-11.

Semiconductor device, semiconductor wafer and manufacturing method of semiconductor device

Номер патента: US20130069206A1. Автор: Taiji Ema,Kazutaka Yoshizawa,Takuya Moriki. Владелец: Fujitsu Semiconductor Ltd. Дата публикации: 2013-03-21.

Method of forming a pattern of semiconductor device of a semiconductor device on a semiconductor substrate by using an extreme ultraviolet mask

Номер патента: US20230106148A1. Автор: Kisung Kim,Sangoh PARK. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-04-06.

Method for producing semiconductor device, semiconductor package, and method for producing semiconductor package

Номер патента: US11990373B2. Автор: Toyoji Sawada. Владелец: Socionext Inc. Дата публикации: 2024-05-21.

Structure and method of forming a multiple leadframe semiconductor device

Номер патента: US20030209804A1. Автор: James Knapp,Stephen Germain. Владелец: Semiconductor Components Industries LLC. Дата публикации: 2003-11-13.

Semiconductor device with an isolation structure coupled to a cover of the semiconductor device

Номер патента: US20160043039A1. Автор: Viswanathan Lakshminarayan,Michael E. Watts,David F. Abdo. Владелец: FREESCALE SEMICONDUCTOR INC. Дата публикации: 2016-02-11.

Semiconductor device, wiring board and method of making same

Номер патента: US20040104487A1. Автор: Akira Chinda. Владелец: Hitachi Cable Ltd. Дата публикации: 2004-06-03.

Method for manufacturing semiconductor device, semiconductor mounting device, and memory device manufactured by method for manufacturing semiconductor device

Номер патента: US20180096980A1. Автор: Yoshinori Miyamoto,Yoshiyuki Arai,Noboru Asahi,Masatsugu Nimura,Shimpei Aoki. Владелец: Toray Engineering Co Ltd. Дата публикации: 2018-04-05.

Method of fabrication of adjacent coplanar semiconductor devices

Номер патента: US5376229A. Автор: Steven D. Lester,Jeffrey N. Miller,Danny E. Mars. Владелец: Hewlett Packard Co. Дата публикации: 1994-12-27.

Method of forming contacts to a semiconductor device

Номер патента: CA2011235A1. Автор: Kathleen A. Perry,San-Mei Ku. Владелец: International Business Machines Corp. Дата публикации: 1990-11-15.

System and methods for optically measuring dielectric thickness in semiconductor devices

Номер патента: US6166819A. Автор: Rainer Florian Schnabel. Владелец: SIEMENS AG. Дата публикации: 2000-12-26.

Method of selectively depositing glass on semiconductor devices

Номер патента: US3895127A. Автор: Robert Benedict Comizzoli. Владелец: RCA Corp. Дата публикации: 1975-07-15.

Semiconductor device with capacitor and method for forming the same

Номер патента: US20230246014A1. Автор: Shu-Hui SU,Yu-Chi Chang,Hsin-Li Cheng,Shih-Fen Huang,Yingkit Felix Tsui. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-08-03.

Semiconductor device, apparatus of estimating lifetime, method of estimating lifetime

Номер патента: US20140091829A1. Автор: Kenji Hirohata,Yuu YAMAYOSE. Владелец: Toshiba Corp. Дата публикации: 2014-04-03.

Semiconductor device, corresponding apparatus and method

Номер патента: US20180190564A1. Автор: Federico Giovanni Ziglioli. Владелец: STMICROELECTRONICS SRL. Дата публикации: 2018-07-05.

Semiconductor device with capacitor and method for forming the same

Номер патента: US11923352B2. Автор: Shu-Hui SU,Yu-Chi Chang,Hsin-Li Cheng,Shih-Fen Huang,Yingkit Felix Tsui. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-03-05.

Semiconductor device with capacitor and method for forming the same

Номер патента: US20240178211A1. Автор: Shu-Hui SU,Yu-Chi Chang,Hsin-Li Cheng,Shih-Fen Huang,Yingkit Felix Tsui. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-05-30.

Semiconductor element mounting member, method of producing the same, and semiconductor device

Номер патента: US20120292769A1. Автор: Eiji Kamijo,Kouichi Takashima,Yoshifumi Aoi. Владелец: ALMT Corp. Дата публикации: 2012-11-22.

Systems and methods for distributing I/O in a semiconductor device

Номер патента: US7271485B1. Автор: Parag N. Madhani,Paul F. Barnes,Donald E. Hawk, Jr.,Kandaswamy Prabakaran. Владелец: Agere Systems LLC. Дата публикации: 2007-09-18.

Method of forming isolation layer for semiconductor device

Номер патента: US5913133A. Автор: Byung Seok Lee. Владелец: Hyundai Electronics Industries Co Ltd. Дата публикации: 1999-06-15.

Method of forming bit line in semiconductor device

Номер патента: US20060240673A1. Автор: Sung Lee. Владелец: Hynix Semiconductor Inc. Дата публикации: 2006-10-26.

Method of forming gate electrode in semiconductor device

Номер патента: US20040259369A1. Автор: Cha Dong,Ho Son. Владелец: Individual. Дата публикации: 2004-12-23.

Semiconductor device, memory cell and method of forming the same

Номер патента: US11957070B2. Автор: Shao-Ming Yu,Bo-Jiun Lin,Tung-Ying Lee,Yu-Chao Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-04-09.

Method of forming metal line in semiconductor device

Номер патента: US7790609B2. Автор: Ji-Ho Hong. Владелец: Dongbu HitekCo Ltd. Дата публикации: 2010-09-07.

Semiconductor device, semiconductor arrangement and method for producing the same

Номер патента: US11887961B2. Автор: Paul Frank,Frank Wagner,Sven Schmidbauer,Oliver Schilling,Thomas Heinelt. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2024-01-30.

Anti-fuse structure and method for fabricating same, as well as semiconductor device

Номер патента: US11043450B2. Автор: Chih Cheng LIU. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2021-06-22.

Temporary protective film for producing semiconductor device, reel body, and method for producing semiconductor device

Номер патента: PH12021551006A1. Автор: Tomohiro Nagoya,Takahiro Kuroda,Naoki Tomori. Владелец: Showa Denko Materials Co Ltd. Дата публикации: 2021-10-04.

Anti-fuse structure and method for fabricating same, as well as semiconductor device

Номер патента: US11798881B2. Автор: Chih Cheng LIU. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-10-24.

Anti-fuse structure and method for fabricating same, as well as semiconductor device

Номер патента: US20200357741A1. Автор: Chih Cheng LIU. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2020-11-12.

Semiconductor device, lead frame, and method for manufacturing semiconductor device

Номер патента: US20190385942A1. Автор: Naoki Saegusa. Владелец: Fuji Electric Co Ltd. Дата публикации: 2019-12-19.

Method of producing epoxy resin encapsulated semiconductor device

Номер патента: MY112215A. Автор: ITO Hideo,MINAMI Katsunori. Владелец: Sumitomo Bakelite Co. Дата публикации: 2001-04-30.

Methods of forming connection bump of semiconductor device

Номер патента: US20130082090A1. Автор: Sun-Hee Park,Moon-Gi Cho,Hwan-Sik Lim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2013-04-04.

Redistribution layers including reinforcement structures and related semiconductor device packages, systems and methods

Номер патента: US11887920B2. Автор: Chan H. Yoo,Hyunsuk CHUN,Tracy N. TENNANT. Владелец: Micron Technology Inc. Дата публикации: 2024-01-30.

Method of forming metal lines of semiconductor device

Номер патента: US20120040527A1. Автор: Suk Joong Kim. Владелец: Hynix Semiconductor Inc. Дата публикации: 2012-02-16.

Semiconductor device and manufacturing method thereof, and electronic system including the semiconductor device

Номер патента: US20240172445A1. Автор: Dongyoung Kim,Iksoo Kim,Daihong KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-05-23.

Redistribution layers including reinforcement structures and related semiconductor device packages, systems and methods

Номер патента: US20200066625A1. Автор: Chan H. Yoo,Hyunsuk CHUN,Tracy N. TENNANT. Владелец: Micron Technology Inc. Дата публикации: 2020-02-27.

Method of forming metal lines of semiconductor device

Номер патента: US8193088B2. Автор: Suk Joong Kim. Владелец: Hynix Semiconductor Inc. Дата публикации: 2012-06-05.

Redistribution layers including reinforcement structures and related semiconductor device packages, systems and methods

Номер патента: US20210074623A1. Автор: Chan H. Yoo,Hyunsuk CHUN,Tracy N. TENNANT. Владелец: Micron Technology Inc. Дата публикации: 2021-03-11.

Methods of forming metal wiring of semiconductor devices

Номер патента: US20040132283A1. Автор: Dong-Ki Jeon,Jae-Won Han. Владелец: Anam Semiconductor Inc. Дата публикации: 2004-07-08.

Low cost method of fabricating shallow junction, Schottky semiconductor devices

Номер патента: US5635414A. Автор: Jun Wu,Joseph Chan,Gregory Zakaluk,Dennis Garbis,Willem Einthoven,Jack Eng,John Amato. Владелец: Individual. Дата публикации: 1997-06-03.

Method of Fabricating Landing Plug in Semiconductor Device

Номер патента: US20100330801A1. Автор: Kyoung Bong Rouh. Владелец: Hynix Semiconductor Inc. Дата публикации: 2010-12-30.

Liquid Crystal Display Device and a Manufacturing Method of the Same

Номер патента: US20110195534A1. Автор: Kiyohiro Kawasaki. Владелец: AU OPTRONICS CORP. Дата публикации: 2011-08-11.

High power semiconductor device cooling apparatus and method

Номер патента: US4010489A. Автор: Frank J. Bourbeau,Barton L. Meredith,Arnold J. Rakowski. Владелец: Motors Liquidation Co. Дата публикации: 1977-03-01.

Particle-removing apparatus for a semiconductor device manufacturing apparatus and method of removing particles

Номер патента: US6184489B1. Автор: Tsuyoshi Moriya,Fumihiko Uesugi,Natsuko Ito. Владелец: NEC Corp. Дата публикации: 2001-02-06.

Methods of making passivating layers for semiconductor devices

Номер патента: GB1532456A. Автор: . Владелец: Sony Corp. Дата публикации: 1978-11-15.

Method of making metal electrode of semiconductor device

Номер патента: US4293637A. Автор: Kenzo Hatada,Takao Kajiwara. Владелец: Matsushita Electric Industrial Co Ltd. Дата публикации: 1981-10-06.

Method of forming conductive layer and semiconductor device

Номер патента: US20120189781A1. Автор: Takashi Sakaki. Владелец: Canon Inc. Дата публикации: 2012-07-26.

Radio frequency semiconductor device package and method for manufacturing same, and radio frequency semiconductor device

Номер патента: US20150262901A1. Автор: Kazutaka Takagi. Владелец: Toshiba Corp. Дата публикации: 2015-09-17.

Method of forming conductive layer and semiconductor device

Номер патента: US8173542B2. Автор: Takashi Sakaki. Владелец: Canon Inc. Дата публикации: 2012-05-08.

Method of forming conductive layer and semiconductor device

Номер патента: US8273656B2. Автор: Takashi Sakaki. Владелец: Canon Inc. Дата публикации: 2012-09-25.

Curable liquid composition, method of coating, inorganic substrate, and semiconductor device

Номер патента: EP2118175A2. Автор: Maki Itoh,Yukinari Harimoto,Elias Dimitris Katsoulis. Владелец: Dow Corning Toray Co Ltd. Дата публикации: 2009-11-18.

Method of forming wiring layer of semiconductor device

Номер патента: US20090227101A1. Автор: Sun-jung Lee,Mu-Kyeng Jung,Ki-Chul Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2009-09-10.

Structures and methods for improving solder bump connections in semiconductor devices

Номер патента: US20100167522A1. Автор: Jeffrey P. Gambino,Timothy H. Daubenspeck,Christopher D. Muzzy,Wolfgang Sauter,Timothty D. SULLIVAN. Владелец: International Business Machines Corp. Дата публикации: 2010-07-01.

Method of forming a pattern in semiconductor device manufacturing process

Номер патента: US5236547A. Автор: Shigeki Takahashi,Yasuhiro Shiraki. Владелец: Toshiba Corp. Дата публикации: 1993-08-17.

Method of forming thin film of semiconductor device

Номер патента: US9564286B2. Автор: Peter Schindler,Friedrich B. Prinz,Ki-Hyun Kim,Sam Hyung Sam KIM,Andrei Teodor IANCU,Michael C. Langston,Stephen P. WALCH,Takane Usui. Владелец: Leland Stanford Junior University. Дата публикации: 2017-02-07.

Method of bevel trimming three dimensional semiconductor device

Номер патента: US20120270394A1. Автор: Yi-Nan Chen,Hsien-Wen Liu,Shing-Yih Shih. Владелец: Nanya Technology Corp. Дата публикации: 2012-10-25.

Method of forming thin film of semiconductor device

Номер патента: US20160049291A1. Автор: Peter Schindler,Friedrich B. Prinz,Ki-Hyun Kim,Sam Hyung Sam KIM,Andrei Teodor IANCU,Michael C. Langston,Stephen P. WALCH,Takane Usui. Владелец: Leland Stanford Junior University. Дата публикации: 2016-02-18.

Bending and forming method of fabricating exposed leadframes for semiconductor devices

Номер патента: SG71148A1. Автор: David R Kee,Buford H Carter Jr,Jesse E Clark. Владелец: Texas Instruments Inc. Дата публикации: 2000-03-21.

Method of forming contacts for a semiconductor device

Номер патента: US20120094485A1. Автор: Shih-Chang Chen,Huan-Just Lin,Tsai-Chun Li,Yuan-Tien Tu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2012-04-19.

Memory cell, method of forming the same, and semiconductor device having the same

Номер патента: US20220255000A1. Автор: Tung-Ying Lee,Yu-Chao Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-08-11.

Semiconductor device resistant to soft errors and a method for manufacturing the semiconductor device

Номер патента: US20020076913A1. Автор: Joo-hern Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2002-06-20.

Method of forming isolation film of semiconductor device

Номер патента: US7060630B2. Автор: Sung Hoon Lee. Владелец: Hynix Semiconductor Inc. Дата публикации: 2006-06-13.

Method of forming conductive layer of semiconductor device

Номер патента: US20240038545A1. Автор: Yu Shu Lin. Владелец: Nanya Technology Corp. Дата публикации: 2024-02-01.

Polymers for hard masks, hard mask compositions including the same, and methods for forming a pattern of a semiconductor device using a hard mask composition

Номер патента: US20160266494A1. Автор: Songse YI,Jungsik CHOI,Myeong koo Kim,Ahreum CHOI,Boodeuk Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-09-15.

Semiconductor device including capacitor and method for fabricating the same

Номер патента: US20240145531A1. Автор: Do Hee KIM,Sei Yon KIM,Min Chul SUNG,Jung Wook WOO,Yeon Gyu LEE,Ja Yong KIM. Владелец: SK hynix Inc. Дата публикации: 2024-05-02.

Semiconductor memory device and a manufacturing method of the semiconductor memory device

Номер патента: US20240373638A1. Автор: Nam Jae LEE. Владелец: SK hynix Inc. Дата публикации: 2024-11-07.

Semiconductor device, electronic component and method

Номер патента: US11380612B2. Автор: Matthias Stecher,Martin Kotzbauer,Julie Mathilde Suzanne Paye,Andreas Zankl. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2022-07-05.

Method of forming buried wiring in semiconductor device

Номер патента: US6903020B2. Автор: Kazuhide Abe. Владелец: Oki Electric Industry Co Ltd. Дата публикации: 2005-06-07.

Semiconductor device manufacturing jig and method for manufacturing same

Номер патента: US11891713B2. Автор: Takeyuki Suzuki. Владелец: Toshiba Electronic Devices and Storage Corp. Дата публикации: 2024-02-06.

Systems and methods for determining specification limits in a semiconductor device virtual fabrication environment

Номер патента: US20230252211A1. Автор: David M. Fried,William J. Egan,Anshuman Kunwar,Kenneth Greiner. Владелец: Coventor Inc. Дата публикации: 2023-08-10.

Systems and methods for determining specification limits in a semiconductor device virtual fabrication environment

Номер патента: WO2022015897A1. Автор: David M. Fried,Kenneth B. Greiner,William J. Egan,Anshuman Kunwar. Владелец: Coventor, Inc.. Дата публикации: 2022-01-20.

Systems and methods for determining specification limits in a semiconductor device virtual fabrication environment

Номер патента: WO2022015897A9. Автор: David M. Fried,Kenneth B. Greiner,William J. Egan,Anshuman Kunwar. Владелец: Coventor, Inc.. Дата публикации: 2022-03-10.

Display device and an inspection method of a display device

Номер патента: EP3866148A1. Автор: Kyun Ho KIM,Bong Im Park,Yong Jin SHIN,Uk Jae JANG. Владелец: Samsung Display Co Ltd. Дата публикации: 2021-08-18.

Display device and bonding detection method of display device

Номер патента: US20220084894A1. Автор: Wei Li,Chienpang HUANG,Chuntong JIANG,Kaifang ZHU. Владелец: Chengdu BOE Optoelectronics Technology Co Ltd. Дата публикации: 2022-03-17.

Method of fabricating vertical structure compound semiconductor devices

Номер патента: US20060148115A1. Автор: Myung Yoo. Владелец: Supergate Technology USA Inc. Дата публикации: 2006-07-06.

Automatic detecting device and automatic detecting method of manufacturing equipment

Номер патента: US20220004180A1. Автор: Ching-Pei Lin. Владелец: United Microelectronics Corp. Дата публикации: 2022-01-06.

Method of forming isolation layer of semiconductor device

Номер патента: US7682928B2. Автор: Myung IL Kang. Владелец: Dongbu Electronics Co Ltd. Дата публикации: 2010-03-23.

Method of alignment mark protection and semiconductor device formed thereby

Номер патента: US20110304006A1. Автор: Chih-Hao Huang,Chiao-Wen Yeh. Владелец: Macronix International Co Ltd. Дата публикации: 2011-12-15.

Light emitting device, display apparatus with an array of light emitting devices, and display apparatus method of manufacture

Номер патента: CA2353326C. Автор: Kunihiro Izuno,Yuichi Fujiwara,Yoshifumi Nagai. Владелец: Nichia Corp. Дата публикации: 2011-07-12.

A developing device and a developing method of substrate

Номер патента: US20210356808A1. Автор: PENG Ding. Владелец: Wuhan China Star Optoelectronics Technology Co Ltd. Дата публикации: 2021-11-18.

Panel structure, display device, and alignment detection method of panel structure

Номер патента: US11320700B2. Автор: Jiaxin Li. Владелец: Hubei Yangtze Industrial Innovation Center of Advanced Display Co Ltd. Дата публикации: 2022-05-03.

Panel structure, display device, and alignment detection method of panel structure

Номер патента: US20220066268A1. Автор: Jiaxin Li. Владелец: Hubei Yangtze Industrial Innovation Center of Advanced Display Co Ltd. Дата публикации: 2022-03-03.

Compound semiconductor device and method of manufacturing the same

Номер патента: US09502525B2. Автор: Atsushi Yamada,Norikazu Nakamura,Kenji Imanishi,Tetsuro ISHIGURO. Владелец: Fujitsu Ltd. Дата публикации: 2016-11-22.

GaN Single-Crystal Mass and Method of Its Manufacture, and Semiconductor Device and Method of Its Manufacture

Номер патента: US20100314625A1. Автор: Takashi Sakurada,Hideaki Nakahata,Yoshiyuki Yamamoto,Shinsuke Fujiwara,Seiji Nakahata,Tomoki Uemura. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2010-12-16.

Manufacturing method of vertical GaN-based semiconductor device and vertical GaN-based semiconductor device

Номер патента: US10903352B2. Автор: Katsunori Ueno,Masaharu Edo,Shinya Takashima. Владелец: Fuji Electric Co Ltd. Дата публикации: 2021-01-26.

Semiconductor device structures with doped elements and methods of formation

Номер патента: US09773677B2. Автор: Shyam Surthi. Владелец: Micron Technology Inc. Дата публикации: 2017-09-26.

Semiconductor device and manufacturing method thereof

Номер патента: US09437611B1. Автор: Erh-Kun Lai. Владелец: Macronix International Co Ltd. Дата публикации: 2016-09-06.

Method of manufacture for a silicon-on-plastic semiconductor device with interfacial adhesion layer

Номер патента: US09812350B2. Автор: Julio C. Costa. Владелец: Qorvo US Inc. Дата публикации: 2017-11-07.

Active structures of a semiconductor device and methods of manufacturing the same

Номер патента: US09768053B2. Автор: Dae-won Kim,Jae-Kyu Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-09-19.

Semiconductor device and method of manufacturing semiconductor device

Номер патента: US20100112770A1. Автор: Yoshitaka Kubota. Владелец: NEC Electronics Corp. Дата публикации: 2010-05-06.

Semiconductor device and method of manufacture

Номер патента: US20210091231A1. Автор: Vicente Calvo Alonso,Jouko LÅNG,Johnny Dahl. Владелец: Comptek Solutions Oy. Дата публикации: 2021-03-25.

Trench mosfet with depleted gate shield and method of manufacture

Номер патента: US20170179277A1. Автор: Patrick M. Shea. Владелец: Great Wall Semiconductor Corp. Дата публикации: 2017-06-22.

Semiconductor device and method of manufacturing the same

Номер патента: US09812534B2. Автор: Naiqian Zhang,Fengli PEI. Владелец: Dynax Semiconductor Inc. Дата публикации: 2017-11-07.

Semiconductor devices and methods of manufacturing the same

Номер патента: US09466697B2. Автор: Bo-Un Yoon,Jeong-Nam Han,Sang-Jine Park,Myung-Geun Song. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-10-11.

Method of manufacturing semiconductor device and semiconductor device

Номер патента: NL2018614B1. Автор: OHTANI Kinya. Владелец: Shindengen Electric Mfg. Дата публикации: 2018-02-01.

Method of manufacturing a semiconductor device

Номер патента: US20200152529A1. Автор: Hitomi Sakurai,Masaru Akino. Владелец: Ablic Inc. Дата публикации: 2020-05-14.

Semiconductor device and method of fabricating the same

Номер патента: US20140183749A1. Автор: SANGHOON Lee,Kyong-won An,Woosung Lee,Yongseok CHO,Hyunyong Go,Sunggil Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2014-07-03.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US11424325B2. Автор: Yasuyuki Kawada. Владелец: Fuji Electric Co Ltd. Дата публикации: 2022-08-23.

Trench power device and manufacturing method therefor

Номер патента: EP4246595A1. Автор: LI YANG,Liang Shi. Владелец: Chongqing Alpha And Omega Semiconductor Ltd. Дата публикации: 2023-09-20.

Semiconductor device having high performance channel

Номер патента: WO2012118566A1. Автор: LIN Cheng,Sei-Hyung Ryu,Anant K. Agarwal,Sarit Dhar. Владелец: CREE, INC.. Дата публикации: 2012-09-07.

Semiconductor device having high performance channel

Номер патента: US09478616B2. Автор: LIN Cheng,Sei-Hyung Ryu,Anant Agarwal,Sarit Dhar. Владелец: Cree Inc. Дата публикации: 2016-10-25.

Semiconductor device and formation thereof

Номер патента: US09698240B2. Автор: Mark Van Dal,Blandine Duriez. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-07-04.

Semiconductor device and method for manufacturing semiconductor device

Номер патента: US09443592B2. Автор: Yasumasa Yamane,Shunpei Yamazaki,Yasuhiko Takemura,Kiyoshi Kato,Takayuki Inoue,Toshihiko Takeuchi,Tetsuhiro Tanaka. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2016-09-13.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US09893162B2. Автор: Takumi Fujimoto,Yoshiyuki Sakai,Naoyuki Ohse. Владелец: Fuji Electric Co Ltd. Дата публикации: 2018-02-13.

Semiconductor device having superlattice semiconductor layer and method of manufacturing the same

Номер патента: EP1505698B1. Автор: Won-seok Lee,Joon-seop Kwak,Kyoung-ho Ha,Ho-sun Paek,Sung-nam Lee,Tan B-502 Stbobo 2-cha Sakong. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2009-09-09.

Semiconductor device and method for manufacturing semiconductor device including an electron trap layer

Номер патента: US09666697B2. Автор: Yasumasa Yamane,Shunpei Yamazaki,Takayuki Inoue,Toshihiko Takeuchi,Tetsuhiro Tanaka. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2017-05-30.

Semiconductor device and methods of forming and operating the same

Номер патента: US20100001339A1. Автор: Yoon Kim,Byung-gook Park,Wook-Hyun Kwon,Yun-Heub Song. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2010-01-07.

Semiconductor device and method of fabricating the same

Номер патента: US09627509B2. Автор: Sangjin Hyun,Wandon Kim,Shinhye Kim,Byung-Suk Jung,TaekSoo JEON,Kyungbum KOO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-04-18.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20180308937A1. Автор: Akira Saito,Takayuki Hirose,Yutaka Terao,Hideaki Teranishi,Aki Takigawa. Владелец: Fuji Electric Co Ltd. Дата публикации: 2018-10-25.

Semiconductor device with metal alloy over fin, conductive layer over channel region of fin, and semiconductive layer over conductive layer and formation thereof

Номер патента: US09590105B2. Автор: Cheng-Ting Chung,Chao-Hsin Chien,Che-Wei Chen. Владелец: National Chiao Tung University NCTU. Дата публикации: 2017-03-07.

Flash memory semiconductor device and method thereof

Номер патента: US09412597B2. Автор: Jen-Yuan Chang,Chia-Ping Lai. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-08-09.

Semiconductor device and method of fabricating the same

Номер патента: US20170092771A1. Автор: Chun-Yuan Wu,Chia-Fu Hsu,Zhibiao Zhou,Qinggang Xing,Xu Yang Shen. Владелец: United Microelectronics Corp. Дата публикации: 2017-03-30.

Semiconductor device and method for fabricating the same

Номер патента: US20010000914A1. Автор: Young Park,Jong Lee,Hyeok Lee. Владелец: LG Semicon Co Ltd. Дата публикации: 2001-05-10.

Semiconductor device and method of fabricating the same

Номер патента: US09608126B1. Автор: Chun-Yuan Wu,Chia-Fu Hsu,Zhibiao Zhou,Qinggang Xing,Xu Yang Shen. Владелец: United Microelectronics Corp. Дата публикации: 2017-03-28.

Semiconductor device and method of formation

Номер патента: US09525072B2. Автор: Si-Chen Lee,Meng-Yu Lin,Shih-Yen Lin. Владелец: National Taiwan University NTU. Дата публикации: 2016-12-20.

Semiconductor device and method of fabricating the same

Номер патента: US20200105765A1. Автор: Yoosang Hwang,Keunnam Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-04-02.

Semiconductor device and method of formation

Номер патента: US20160005830A1. Автор: Ming-Han Liao. Владелец: National Taiwan University NTU. Дата публикации: 2016-01-07.

Semiconductor device and method of formation

Номер патента: US09917169B2. Автор: Ming-Han Liao. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-03-13.

Semiconductor device and method of fabricating the same

Номер патента: US09773890B2. Автор: Kun-Yuan Liao,Feng-Yi Chang,Chun-Lung Chen,Chia-Lin Lu,Wei-Hao Huang. Владелец: United Microelectronics Corp. Дата публикации: 2017-09-26.

Method of forming semiconductor device using etch stop layer

Номер патента: US09564357B2. Автор: Fang-I Chih,Yen-Chang Chao. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-02-07.

Method of manufacturing nitride semiconductor device

Номер патента: US20130143373A1. Автор: Ki Yeol Park,Young Hwan Park,Woo Chul Jeon. Владелец: Samsung Electro Mechanics Co Ltd. Дата публикации: 2013-06-06.

Manufacturing method of semiconductor device

Номер патента: US20080142901A1. Автор: Yutaka Takeshima,Yasuko Yoshida,Shuji Matsuo,Kota Funayama,Katsuhiro Uchimura. Владелец: Individual. Дата публикации: 2008-06-19.

Semiconductor device

Номер патента: US20160163653A1. Автор: Coenraad Cornelis Tak,Jeroen Antoon CROON. Владелец: NXP BV. Дата публикации: 2016-06-09.

Semiconductor devices and methods for forming semiconductor devices

Номер патента: US20040097048A1. Автор: Kwan Koh. Владелец: Anam Semiconductor Inc. Дата публикации: 2004-05-20.

Method of manufacturing semiconductor device

Номер патента: US09425288B2. Автор: Chao Zhao,Huicai Zhong,Qingqing Liang. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2016-08-23.

Semiconductor device and manufacturing method thereof

Номер патента: US20230187513A1. Автор: Chen-Shuo Huang. Владелец: AUO Corp. Дата публикации: 2023-06-15.

Semiconductor device package and method of fabricating the same

Номер патента: US20220148948A1. Автор: Younghwan Park,Sunkyu Hwang,Jongseob Kim,Jaejoon Oh,Soogine Chong. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-05-12.

Semiconductor device and formation thereof

Номер патента: US09991169B2. Автор: Mark Van Dal,Blandine Duriez. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-06-05.

Semiconductor device and formation thereof

Номер патента: US09450096B2. Автор: Mark Van Dal,Blandine Duriez. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-09-20.

Silicon carbide epitaxial substrate, method of manufacturing silicon carbide epitaxial substrate, and method of manufacturing silicon carbide semiconductor device

Номер патента: US20240332364A1. Автор: Taro Nishiguchi. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2024-10-03.

Structure and method of semiconductor device structure with gate

Номер патента: US09859113B2. Автор: Chun-Sheng Wu,Ding-I Liu,Yi-Fang LI,jing-yang Li. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-01-02.

III-nitride semiconductor device with doped epi structures

Номер патента: US09608075B1. Автор: Srinivasan Kannan,Peter Kim,Scott Nelson,Mihir Tungare,Jianwei Wan,Seong-Eun Park. Владелец: Infineon Technologies North America Corp. Дата публикации: 2017-03-28.

Capacitor, semiconductor device, and manufacturing method of semiconductor device

Номер патента: US12041765B2. Автор: Yuichi Sato,Tomoaki Moriwaka,Ryota Hodo,Yuta IIDA. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2024-07-16.

Vertical type semiconductor devices including a metal gate and methods of forming the same

Номер патента: US9093547B2. Автор: Chang-Hyun Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2015-07-28.

Vertical type semiconductor devices including a metal gate and methods of forming the same

Номер патента: US20140203346A1. Автор: Chang-Hyun Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2014-07-24.

Methods of forming and operating semiconductor device

Номер патента: US20110194356A1. Автор: Yoon Kim,Byung-gook Park,Wook-Hyun Kwon,Yun-Heub Song. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2011-08-11.

Method of manufacturing nitride semiconductor device

Номер патента: US09691875B2. Автор: Hajime Sasaki. Владелец: Mitsubishi Electric Corp. Дата публикации: 2017-06-27.

Semiconductor device and manufacturing method of the same

Номер патента: US20210183874A1. Автор: Yao-Ting Tsai,Hsin-Huang Shen,Yu-Shu Cheng. Владелец: Winbond Electronics Corp. Дата публикации: 2021-06-17.

Structure and method to optimize strain in cmosfets

Номер патента: WO2006078740A3. Автор: Xiangdong Chen,Haining S Yang. Владелец: Haining S Yang. Дата публикации: 2007-11-01.

Structure and method to optimize strain in cmosfets

Номер патента: EP1842239A2. Автор: Haining S. Yang,Xiangdong Chen. Владелец: International Business Machines Corp. Дата публикации: 2007-10-10.

Structure and method to optimize strain in cmosfets

Номер патента: WO2006078740A2. Автор: Haining S. Yang,Xiangdong Chen. Владелец: INTERNATIONAL BUSINESS MACHINES CORPORATION. Дата публикации: 2006-07-27.

Structure and method to optimize strain in cmosfets

Номер патента: EP1842239A4. Автор: Xiangdong Chen,Haining S Yang. Владелец: International Business Machines Corp. Дата публикации: 2009-07-01.

Semiconductor device and manufacturing method thereof

Номер патента: US20160247814A1. Автор: Erh-Kun Lai,Kuang-Hao Chiang. Владелец: Macronix International Co Ltd. Дата публикации: 2016-08-25.

Semiconductor device and manufacturing method thereof

Номер патента: US09576972B2. Автор: Erh-Kun Lai,Kuang-Hao Chiang. Владелец: Macronix International Co Ltd. Дата публикации: 2017-02-21.

Semiconductor device and manufacturing method thereof

Номер патента: US20180248022A1. Автор: Tianchun Ye. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2018-08-30.

Semiconductor device and manufacturing method of the same

Номер патента: US20150060958A1. Автор: Erh-Kun Lai,Shih-Hung Chen. Владелец: Macronix International Co Ltd. Дата публикации: 2015-03-05.

Semiconductor device and manufacturing method thereof

Номер патента: US09660042B1. Автор: Ching-Wen Hung,Chih-Sen Huang,Jia-Rong Wu,Yi-Hui Lee,Ying-Cheng Liu. Владелец: United Microelectronics Corp. Дата публикации: 2017-05-23.

Manufacturing method of semiconductor device and semiconductor device

Номер патента: US09484387B2. Автор: Makoto Shizukuishi. Владелец: Individual. Дата публикации: 2016-11-01.

Semiconductor device and method of driving semiconductor device

Номер патента: US09673823B2. Автор: Yasuhiko Takemura. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2017-06-06.

Semiconductor devices having a supporter and methods of fabricating the same

Номер патента: US09601494B2. Автор: Seung-Jun Lee,Dae-Ik Kim,Young-Seung Cho,Kyung-Eun KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-03-21.

Semiconductor device and method of fabricating the same

Номер патента: US20210143182A1. Автор: Dong Min Kang,Hyung Sup Yoon,Sung-Bum BAE,Kyu Jun CHO,Sung-Jae Chang. Владелец: Electronics and Telecommunications Research Institute ETRI. Дата публикации: 2021-05-13.

Semiconductor device having capped air caps between buried bit lines and buried gate

Номер патента: US10854676B2. Автор: Li-Wei Feng,Ying-Chiao Wang,Chien-Ting Ho,Tsung-Ying Tsai,Tzu-Tsen Liu. Владелец: Fujian Jinhua Integrated Circuit Co Ltd. Дата публикации: 2020-12-01.

Optoelectronic semiconductor device and method of manufacturing an optoelectronic semiconductor device

Номер патента: US11757254B2. Автор: Peter Fuchs,Thomas Falck,Hubert Halbritter,Christian Lauer,Ann RUSSELL,Bruno Jentzsch. Владелец: OSRAM Opto Semiconductors GmbH. Дата публикации: 2023-09-12.

Optoelectronic semiconductor device and method of manufacturing an optoelectronic semiconductor device

Номер патента: WO2021144377A1. Автор: Peter Fuchs,Thomas Falck,Hubert Halbritter,Christian Lauer,Ann RUSSELL,Bruno Jentzsch. Владелец: OSRAM Opto Semiconductors GmbH. Дата публикации: 2021-07-22.

Semiconductor device socket, assembly and methods

Номер патента: US20010000304A1. Автор: Walter Moden,Warren Farnworth,Larry Kinsman. Владелец: Individual. Дата публикации: 2001-04-19.

Optical semiconductor device, optical module, and method for manufacturing optical semiconductor device

Номер патента: US20180090910A1. Автор: Kouji Nakahara,Takeshi Kitatani. Владелец: Oclaro Japan Inc. Дата публикации: 2018-03-29.

Optical semiconductor device, optical unit, and method for manufacturing optical unit

Номер патента: US20230079029A1. Автор: Akira Higuchi. Владелец: Hamamatsu Photonics KK. Дата публикации: 2023-03-16.

Electronic device and an operating method of the electronic device

Номер патента: US20240235222A9. Автор: Dongjoon Kim,Junhan BAE,Duseung OH,Woonhyung HEO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-11.

Terminal device and antenna manufacturing method of terminal device

Номер патента: EP4106101A1. Автор: BIN Li. Владелец: ZTE Corp. Дата публикации: 2022-12-21.

Terminal device and antenna manufacturing method of terminal device

Номер патента: US20230246325A1. Автор: BIN Li. Владелец: ZTE Corp. Дата публикации: 2023-08-03.

Electronic device and an operating method of the electronic device

Номер патента: US20240136834A1. Автор: Dongjoon Kim,Junhan BAE,Duseung OH,Woonhyung HEO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-04-25.

Optical semiconductor device and method of manufacturing thereof

Номер патента: EP1812972A1. Автор: Yoshitsugu Dow Corning Toray Co. Ltd. MORITA,Tomoko Dow Corning Toray Co. Ltd. KATO. Владелец: Dow Corning Toray Co Ltd. Дата публикации: 2007-08-01.

Semiconductor device and method of manufacturing the same

Номер патента: US20020019129A1. Автор: Masahiro Shimizu. Владелец: Mitsubishi Electric Corp. Дата публикации: 2002-02-14.

Semiconductor device and method of manufacturing the same

Номер патента: US20170069769A1. Автор: Yoshiaki Yamamoto,Tsuyoshi Horikawa,Tohru Mogami,Keiji Sakamoto,Keizo Kinoshita,Tatsuya Usami. Владелец: Renesas Electronics Corp. Дата публикации: 2017-03-09.

Semiconductor device and method of manufacturing the same

Номер патента: US09985149B2. Автор: Yoshiaki Yamamoto,Tsuyoshi Horikawa,Tohru Mogami,Keiji Sakamoto,Keizo Kinoshita,Tatsuya Usami. Владелец: Renesas Electronics Corp. Дата публикации: 2018-05-29.

Semiconductor device and method of manufacturing thereof

Номер патента: EP1606835A1. Автор: Yoshitsugu c/o Dow Corn Toray Sil. Co Ltd MORITA,Katsutoshi c/o Dow Corn. Toray Sil. Co. Ltd MINE,Junji c/o Dow Corn. Toray Sil. Co. Ltd NAKANISHI,Hiroji c/o Dow Corning Toray Sil. Co. Ltd. ENAMI,Fumio c/o Apic Yamada Corp. Miyajima. Владелец: Dow Corning Toray Co Ltd. Дата публикации: 2005-12-21.

Lead frame for semiconductor device and method of manufacturing of the same

Номер патента: US20110221052A1. Автор: Takahiro Fukunaga,Yasuko Imanishi. Владелец: Individual. Дата публикации: 2011-09-15.

Lead frame for semiconductor device and method of manufacturing of the same

Номер патента: US8110904B2. Автор: Takahiro Fukunaga,Yasuko Imanishi. Владелец: Panasonic Corp. Дата публикации: 2012-02-07.

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Номер патента: US20240355719A1. Автор: Shun-Hsing Liao. Владелец: Shunsin Technology Zhongshan Ltd. Дата публикации: 2024-10-24.

Laser bonding apparatus, method of bonding semiconductor devices, and method of manufacturing semiconductor package

Номер патента: US10886248B2. Автор: Satoshi Inada,Jun-Su Lim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-01-05.

Semiconductor devices with recessed interconnects

Номер патента: US09711457B2. Автор: David S. Pratt. Владелец: Micron Technology Inc. Дата публикации: 2017-07-18.

Semiconductor device and method of manufacturing thereof

Номер патента: WO2005091361A1. Автор: Katsutoshi Mine,Yoshitsugu Morita,Junji Nakanishi. Владелец: DOW CORNING TORAY CO., LTD.. Дата публикации: 2005-09-29.

Package including a plurality of stacked semiconductor devices including a capacitance enhanced through via and method of manufacture

Номер патента: US09508692B1. Автор: Darryl G. Walker. Владелец: Individual. Дата публикации: 2016-11-29.

Method of rinsing and drying semiconductor device and method of manufacturing semiconductor device using the same

Номер патента: US20150287590A1. Автор: Hyosan Lee,Yongsun Ko,Kwangsu Kim,Seokhoon Kim,Kuntack Lee,Yong-jhin Cho,Jihoon Jeong,Jung-min Oh,ChangSup Mun. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2015-10-08.

Semiconductor package and method of manufacturing semiconductor package

Номер патента: US20240249990A1. Автор: Dahee Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-25.

Semiconductor device with tiered pillar and manufacturing method thereof

Номер патента: US20200294815A1. Автор: Ronald Patrick Huemoeller,Michael G. Kelly,Curtis Zwenger. Владелец: Amkor Technology Singapore Holding Pte Ltd. Дата публикации: 2020-09-17.

Semiconductor device with tiered pillar and manufacturing method thereof

Номер патента: US20190237343A1. Автор: Ronald Patrick Huemoeller,Michael G. Kelly,Curtis Zwenger. Владелец: Amkor Technology Inc. Дата публикации: 2019-08-01.

Semiconductor device with tiered pillar and manufacturing method thereof

Номер патента: US10748786B2. Автор: Ronald Patrick Huemoeller,Michael G. Kelly,Curtis Zwenger. Владелец: Amkor Technology Inc. Дата публикации: 2020-08-18.

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Номер патента: US20230387100A1. Автор: Shin-puu Jeng,Po-Yao Chuang,Chang-Yi Yang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-30.

Materials and structures for optical and electrical iii-nitride semiconductor devices and methods

Номер патента: US20210296516A1. Автор: Robbie J. Jorgenson. Владелец: Individual. Дата публикации: 2021-09-23.

Materials and structures for optical and electrical III-nitride semiconductor devices and methods

Номер патента: US11631775B2. Автор: Robbie J. Jorgenson. Владелец: Individual. Дата публикации: 2023-04-18.

Method of manufacturing optical semiconductor device and optical semiconductor device

Номер патента: US12113155B2. Автор: Takashi Araki,Tsukasa Maruyama,Takehiro Miyaji. Владелец: Dowa Electronics Materials Co Ltd. Дата публикации: 2024-10-08.

Packaging devices and methods of manufacture thereof

Номер патента: US09633963B2. Автор: Chen-Hua Yu,Hsien-Wei Chen,Hao-Yi Tsai,Mirng-Ji Lii,Tsung-Yuan Yu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-04-25.

Packaging devices and methods of manufacture thereof

Номер патента: US09472522B2. Автор: Jie Chen,Hsien-Wei Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-10-18.

Packaging devices and methods of manufacture thereof

Номер патента: US09418952B2. Автор: Jie Chen,Hsien-Wei Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-08-16.

Semiconductor device and manufacturing method thereof

Номер патента: US20010049191A1. Автор: Hiroaki Uchida. Владелец: Oki Electric Industry Co Ltd. Дата публикации: 2001-12-06.

Semiconductor device and manufacturing method thereof

Номер патента: US20030124811A1. Автор: Hiroaki Uchida. Владелец: Oki Electric Industry Co Ltd. Дата публикации: 2003-07-03.

Devices and methods of packaging semiconductor devices

Номер патента: US09935084B2. Автор: Jie Chen,Hsien-Wei Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-04-03.

Semiconductor memory devices and methods of forming the same

Номер патента: US09466612B2. Автор: Jung Ho Kim,Dongwoo Kim,Yong-Hoon Son,Daehyun Jang,Myoungbum Lee,Kihyun Hwang,Sangryol Yang,Ju-Eun Kim,Sunghae Lee,JinGyun Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-10-11.

Semiconductor device, method of manufacturing a semiconductor device, and positioning jig

Номер патента: US09991242B2. Автор: Kenichiro Sato. Владелец: Fuji Electric Co Ltd. Дата публикации: 2018-06-05.

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Номер патента: US09799580B2. Автор: Li Li,Lakshminarayan Viswanathan,Jaynal A. Molla. Владелец: NXP USA Inc. Дата публикации: 2017-10-24.

Contact pad for semiconductor devices

Номер патента: US09589891B2. Автор: Jie Chen,Hsien-Wei Chen,Ying-Ju Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-03-07.

Semiconductor device and method of wire bonding for semiconductor device

Номер патента: US20040188858A1. Автор: Yoshifumi Watanabe. Владелец: Denso Corp. Дата публикации: 2004-09-30.

Semiconductor device and method for manufacturing semiconductor device for adjusting threshold thereof

Номер патента: US09443990B2. Автор: Yasumasa Yamane,Shunpei Yamazaki,Yasuhiko Takemura,Kiyoshi Kato,Takayuki Inoue,Toshihiko Takeuchi,Tetsuhiro Tanaka. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2016-09-13.

Through silicon buried power rail implemented backside power distribution network semiconductor architecture and method of manufacturing the same

Номер патента: US12125788B2. Автор: KANG Ill Seo,Byounghak Hong,Hoonseok Seo,Saehan Park,Gil Hwan Son. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-10-22.

Embedded semiconductor device package and method of manufacturing thereof

Номер патента: US09391027B2. Автор: Arun Virupaksha Gowda,Paul Alan McConnelee,Shakti Singh Chauhan. Владелец: General Electric Co. Дата публикации: 2016-07-12.

Method of manufacturing silicon carbide semiconductor substrate and method of manufacturing silicon carbide semiconductor device

Номер патента: US09368345B2. Автор: Jun Genba. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2016-06-14.

Joining electrode, method of manufacturing the same, semiconductor device, and method of manufacturing the same

Номер патента: US8884439B2. Автор: Kenichi Aoyagi. Владелец: Sony Corp. Дата публикации: 2014-11-11.

3D packages and methods for forming the same

Номер патента: US09793187B2. Автор: Jing-Cheng Lin,Shih Ting Lin,Szu-Wei Lu,Kung-Chen Yeh. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-10-17.

Semiconductor devices having dummy patterns and methods of fabricating the same

Номер патента: US09748257B2. Автор: Jaehan Lee,Won-Seok Jung,Kyungjoong JOO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-08-29.

Semiconductor devices, semiconductor device packages, and packaging techniques for impedance matching and/or low frequency terminations

Номер патента: US09484222B2. Автор: Lu Li,Lakshminarayan Viswanathan,Michael E. Watts,Mahesh K. Shah,Hussain H. Ladhani. Владелец: FREESCALE SEMICONDUCTOR INC. Дата публикации: 2016-11-01.

Semiconductor device with fully self-aligned local interconnects, and method for fabricating the device

Номер патента: US20020098672A1. Автор: Theodore Houston. Владелец: Individual. Дата публикации: 2002-07-25.

Semiconductor device and method of making

Номер патента: US20230352089A1. Автор: Gerben Doornbos. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-02.

Integrated fan-out package, semiconductor device, and method of fabricating the same

Номер патента: US09812426B1. Автор: Hsien-Wei Chen,Wei-Cheng Wu,Li-Han Hsu,Cheng-Hsien Hsieh,Tzu-Shiun Sheu,Yan-Fu Lin,Chin-te Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-11-07.

Method of mounting semiconductor chips on a gold-coated surface

Номер патента: RU2714538C1. Автор: Александр Сергеевич Ионов,Нина Демьяновна Худякова,Татьяна Николаевна Забегина. Владелец: Акционерное общество "ОКБ-Планета" АО "ОКБ-Планета". Дата публикации: 2020-02-18.

Package Structure and Methods of Forming Same

Номер патента: US20190219762A1. Автор: Tien-I Bao,Hai-Ching Chen,Ying-hao Kuo,Jui Hsieh Lai. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2019-07-18.

Semiconductor device including conductive structure having nucleation structure and method of forming the same

Номер патента: US20200152577A1. Автор: Ji Won Kang,Tae Yeol Kim,Sang Jin HYUN,Jin Il Lee,Chung Hwan Shin. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-05-14.

Semiconductor device including conductive structure having nucleation structure and method of forming the same

Номер патента: US20190295958A1. Автор: Ji Won Kang,Tae Yeol Kim,Sang Jin HYUN,Jin Il Lee,Chung Hwan Shin. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-09-26.

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Номер патента: US20150212270A1. Автор: Tien-I Bao,Hai-Ching Chen,Ying-hao Kuo,Jui Hsieh Lai. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2015-07-30.

3D packages and methods for forming the same

Номер патента: US09553070B2. Автор: Chen-Hua Yu,Der-Chyang Yeh. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-01-24.

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Номер патента: US09530736B2. Автор: Yu-Hung Lin,Sheng-Hsuan Lin,Chih-Wei Chang,You-Hua Chou. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-12-27.

Semiconductor device and method of fabricating the same

Номер патента: US11314919B2. Автор: Bonghyun LEE,Yongdeok Kim,Munjun Seo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-04-26.

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Номер патента: US20240265188A1. Автор: Bonghyun LEE,Yongdeok Kim,Munjun Seo. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2024-08-08.

Semiconductor devices and methods of fabricating the same

Номер патента: US09978932B2. Автор: KEN Tokashiki,Vladimir Urazaev,Jongchul Park,Sangmin Lee,Gwang-Hyun Baek,Sechung Oh,Jaehun SEO,Hyungjoon Kwon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-05-22.

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Номер патента: US09496488B2. Автор: KEN Tokashiki,Vladimir Urazaev,Jongchul Park,Sangmin Lee,Gwang-Hyun Baek,Sechung Oh,Jaehun SEO,Hyungjoon Kwon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-11-15.

Method of manufacturing organic semiconductor device

Номер патента: US20200176697A1. Автор: Lixuan Chen. Владелец: Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd. Дата публикации: 2020-06-04.

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Номер патента: US12142587B2. Автор: Jinho PARK,Jeong Hoon Ahn,Chin Kim,Yongseung Bang,Jiyeon Baek. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-11-12.

3D packages and methods for forming the same

Номер патента: US09543284B2. Автор: Ming-Chih Yew,Kuo-Chuan Liu,Wen-Yi Lin,Po-Yao Lin,Fu-Jen Li. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-01-10.

Semiconductor device and method of fabricating the same

Номер патента: US09520556B2. Автор: Hideki Horii,Jeonghee Park,Sugwoo Jung. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-12-13.

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Номер патента: US20230395425A1. Автор: Yung Fu Chong,Rui Tze TOH,Fangyue Liu. Владелец: GLOBALFOUNDRIES SINGAPORE PTE LTD. Дата публикации: 2023-12-07.

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Номер патента: US11824024B2. Автор: Yasuaki Hozumi. Владелец: Fuji Electric Co Ltd. Дата публикации: 2023-11-21.

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Номер патента: US20240258207A1. Автор: Adam Brown,Dave Anderson,Ricardo Yandoc. Владелец: Nexperia BV. Дата публикации: 2024-08-01.

Electric connection terminal and method of manufacturing the same, semiconductor device and method of mounting the same

Номер патента: US20050104213A1. Автор: Akiyoshi Aoyagi. Владелец: Seiko Epson Corp. Дата публикации: 2005-05-19.

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Номер патента: US09865482B2. Автор: KANG Chen,Yaojian Lin,Jianmin Fang,Haijing Cao. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2018-01-09.

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Номер патента: US20230343683A1. Автор: Stephen Ryan Hooper,Chayathorn Saklang,Chanon Suwankasab,Amornthep Saiyajitara,Crispulo Estira Lictao, JR.,Dominic (PohMeng) Koey. Владелец: NXP USA Inc. Дата публикации: 2023-10-26.

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Номер патента: US20030204280A1. Автор: Yoshiaki Kobayashi. Владелец: Trecenti Technologies Inc. Дата публикации: 2003-10-30.

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Номер патента: US20230007912A1. Автор: Chen-Hua Yu,Chih-Hang Tung,Chung-Jung Wu,Tung-Liang Shao,Sheng-Tsung HSIAO,Jen Yu Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-01-12.

Semiconductor device with embedded battery and method therefor

Номер патента: EP4269330A1. Автор: Stephen Ryan Hooper,Chayathorn Saklang,Chanon Suwankasab,Amornthep Saiyajitara,Jr. Crispulo Estira Lictao,Dominic Koey (Pohmeng). Владелец: NXP USA Inc. Дата публикации: 2023-11-01.

Semiconductor device, electronic apparatus, and method of manufacturing semiconductor device

Номер патента: US09461103B2. Автор: Kenji Furuya,Hideki Fujii,Yuichi Miyagawa. Владелец: Renesas Electronics Corp. Дата публикации: 2016-10-04.

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Номер патента: US11901245B2. Автор: Chen-Chao Wang,Chih-Yi Huang,Keng-Tuan Chang. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2024-02-13.

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Номер патента: US20220399240A1. Автор: Chen-Chao Wang,Chih-Yi Huang,Keng-Tuan Chang. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2022-12-15.

Contact via structures of semiconductor devices

Номер патента: US11776844B2. Автор: Yung Fu Chong,Rui Tze TOH,Fangyue Liu. Владелец: GLOBALFOUNDRIES SINGAPORE PTE LTD. Дата публикации: 2023-10-03.

Semiconductor substrate, semiconductor device and manufacturing method of semiconductor substrate

Номер патента: US20160315220A1. Автор: Kai Cheng. Владелец: Enkris Semiconductor Inc. Дата публикации: 2016-10-27.

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Номер патента: US20220115276A1. Автор: Chen-Chao Wang,Chih-Yi Huang,Keng-Tuan Chang. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2022-04-14.

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Номер патента: US20240186193A1. Автор: Chen-Chao Wang,Chih-Yi Huang,Keng-Tuan Chang. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2024-06-06.

Semiconductor device, semiconductor module, and method of manufacturing semiconductor device

Номер патента: US20050006762A1. Автор: Munehide Saimen. Владелец: Seiko Epson Corp. Дата публикации: 2005-01-13.

Semiconductor device manufacturing method and semiconductor device

Номер патента: US9070696B2. Автор: Masahiro Kikuchi,Kazunaga Onishi,Rikihiro Maruyama,Masafumi TEZUKA. Владелец: Fuji Electric Co Ltd. Дата публикации: 2015-06-30.

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Номер патента: US09666438B2. Автор: Yu-Hung Lin,Sheng-Hsuan Lin,Chih-Wei Chang,You-Hua Chou. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-05-30.

Electronic device and method of producing the same

Номер патента: US09953937B2. Автор: Daijiro Ishibashi. Владелец: Fujitsu Ltd. Дата публикации: 2018-04-24.

Organic transistor, compound, organic semiconductor material for non-light-emitting organic semiconductor device, material for organic transistor, coating solution for non-light-emitting organic semiconductor device, organic semiconductor film for non-light-emitting organic semiconductor device, and method for manufacturing organic semiconductor film for non-light emitting organic semiconductor device

Номер патента: US09705096B2. Автор: Yuki Hirai,Kensuke MASUI,Katsuyuki Youfu. Владелец: Fujifilm Corp. Дата публикации: 2017-07-11.

Semiconductor devices including a support for an electrode and methods of forming semiconductor devices including a support for an electrode

Номер патента: US09647056B2. Автор: Jaehong Park,Je-woo Han,Gyungjin Min,Junho Yoon,Yongmoon Jang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-05-09.

Device for holding multiple semiconductor devices during thermocompression bonding and method of bonding

Номер патента: US09484241B2. Автор: Chun Ho Fan,Man Chung CHAN. Владелец: ASM TECHNOLOGY SINGAPORE PTE LTD. Дата публикации: 2016-11-01.

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Номер патента: WO2023222204A1. Автор: Gilberto Curatola,Mirko Bernardoni,Lasse Petteri PALM. Владелец: Huawei Digital Power Technologies Co., Ltd.. Дата публикации: 2023-11-23.

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Номер патента: US11742406B2. Автор: Tiantian Zhang. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2023-08-29.

Method of manufacturing a semiconductor device having reduced on-state resistance and structure

Номер патента: US09893058B2. Автор: Michael J. Seddon,Francis J. Carney. Владелец: Semiconductor Components Industries LLC. Дата публикации: 2018-02-13.

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Номер патента: US20240234237A1. Автор: Mitsunori Aiko,Nobuyoshi Kimoto. Владелец: Mitsubishi Electric Corp. Дата публикации: 2024-07-11.

Method of manufacturing a semiconductor device having a multi-layered wiring structure

Номер патента: US7189637B2. Автор: Kazuhiko Sato,Katsuhiko Hotta,Naokatsu Suwanai,Masashi Sahara,Atsushi Tachigami,Ken Uchikoshi. Владелец: Hitachi ULSI Systems Co Ltd. Дата публикации: 2007-03-13.

Method of manufacturing an integrated circuit substrate

Номер патента: US09786568B2. Автор: Martin Mischitz,Andrew Wood,Claudia Sgiarovello. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2017-10-10.

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Номер патента: US09397040B2. Автор: Yu-Hung Lin,Sheng-Hsuan Lin,Chih-Wei Chang,You-Hua Chou. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-07-19.

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Номер патента: RU2680989C1. Автор: Гасан Абакарович Мустафаев,Асламбек Идрисович Хасанов,Руслан Азаевич Кутуев,Арслан Гасанович Мустафаев. Владелец: Федеральное государственное бюджетное образовательное учреждение высшего образования "Чеченский государственный университет". Дата публикации: 2019-03-01.

Semiconductor device and method for fabricating the same

Номер патента: US20210327887A1. Автор: Cheng-Ling Yang. Владелец: Nanya Technology Corp. Дата публикации: 2021-10-21.

Semiconductor device having polysilicon bit line contact

Номер патента: US7884441B2. Автор: Nam Yoon Kim. Владелец: Dongbu HitekCo Ltd. Дата публикации: 2011-02-08.

Testing of semiconductor devices and devices, and designs thereof

Номер патента: US09945899B2. Автор: Stefano Aresu,Michael Roehner. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2018-04-17.

Packaged semiconductor device with a lead frame and method for forming

Номер патента: US09640466B1. Автор: Varughese Mathew,Sheila Chopin. Владелец: NXP USA Inc. Дата публикации: 2017-05-02.

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Номер патента: US11705436B2. Автор: Soichi Homma,Takeori Maeda,Yuusuke Takano. Владелец: Kioxia Corp. Дата публикации: 2023-07-18.

Structures and methods for shielding magnetically sensitive components

Номер патента: US09954163B2. Автор: Jason Janesky,Wenchin Lin. Владелец: Everspin Technologies Inc. Дата публикации: 2018-04-24.

Packaging devices and methods for semiconductor devices

Номер патента: US09893021B2. Автор: Wensen Hung. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-02-13.

Electrically conductive element, power semiconductor device having an electrically conductive element and method of manufacturing a power semiconductor device

Номер патента: US09812376B2. Автор: Michael Nelhiebel,Stefan Woehlert,Siegfried Roehl. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2017-11-07.

Chuck assembly, semiconductor device fabricating apparatus including the same, and method of fabricating semiconductor device

Номер патента: US20220223452A1. Автор: Taemin EARMME,Seungchul Han,Youngjae Son,Guesuk Lee,Hyeongyun Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-07-14.

Semiconductor device packaging warpage control

Номер патента: EP4099367A2. Автор: Vivek Gupta,Michael B. Vincent,Scott M. Hayes,Zhiwei Gong,Richard Te GAN. Владелец: NXP USA Inc. Дата публикации: 2022-12-07.

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Номер патента: EP4099367A3. Автор: Vivek Gupta,Michael B. Vincent,Scott M. Hayes,Zhiwei Gong,Richard Te GAN. Владелец: NXP USA Inc. Дата публикации: 2022-12-28.

Semiconductor device and manufacturing method of the same

Номер патента: US20080105959A1. Автор: Shigeki Tanaka. Владелец: Renesas Technology Corp. Дата публикации: 2008-05-08.

Tungsten plug structure of semiconductor device and method for forming the same

Номер патента: US20070102824A1. Автор: In Chun. Владелец: DongbuAnam Semiconductor Inc. Дата публикации: 2007-05-10.

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Номер патента: US12125716B2. Автор: Vivek Gupta,Michael B. Vincent,Scott M. Hayes,Zhiwei Gong,Richard Te GAN. Владелец: NXP USA Inc. Дата публикации: 2024-10-22.

Systems and methods for coupling a semiconductor device of an automation device to a heat sink

Номер патента: US09570374B2. Автор: RUI Zhou,Paul Jerome Grosskreuz,Jeremiah John Kopiness,Kelly James Bronk. Владелец: Rockwell Automation Technologies Inc. Дата публикации: 2017-02-14.

Semiconductor Device and Method

Номер патента: US20240250019A1. Автор: Ming-Da Cheng,Po-Hao Tsai,Ting-Li Yang,Yung-Han Chuang,Hsueh-Sheng Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-25.

Semiconductor device structure and method for forming the same

Номер патента: US09875972B1. Автор: Han-Ping Pu,Kai-Chiang Wu,Shou-Zen Chang,Sen-Kuei HSU,Hsin-Yu Pan,Chi-Ming Huang,Albert Wan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-01-23.

Semiconductor device, integrated circuit and method of manufacturing the same

Номер патента: US12114511B2. Автор: Yong-Jie WU,Yen-Chung Ho,Hui-Hsien Wei,Chia-Jung Yu,Pin-Cheng HSU. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-08.

Semiconductor device, integrated circuit and method of manufacturing the same

Номер патента: US12133396B2. Автор: Chia-Jung Yu,Pin-Cheng HSU. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-29.

Semiconductor device, integrated circuit and method of manufacturing the same

Номер патента: US20240373650A1. Автор: Yong-Jie WU,Yen-Chung Ho,Hui-Hsien Wei,Chia-Jung Yu,Pin-Cheng HSU. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-11-07.

Semiconductor device and manufacturing method of semiconductor device

Номер патента: US12102021B2. Автор: HE Qian,Taiwei CHIU,Tingying SHEN. Владелец: Xiamen Industrial Technology Research Institute Co Ltd. Дата публикации: 2024-09-24.

Semiconductor device and manufacturing method of semiconductor device

Номер патента: US12096703B2. Автор: Qi Xiang,Taiwei CHIU,Tingying SHEN. Владелец: Xiamen Industrial Technology Research Institute Co Ltd. Дата публикации: 2024-09-17.

Multiplexer for SDFQ having differently-sized scan and data transistors, semiconductor device including same and methods of manufacturing same

Номер патента: US12099090B2. Автор: Jerry Chang Jui Kao,Qingchao Meng,Huaixin XIAN,Changlin Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-24.

Memory device, method of forming the same, and semiconductor device having the same

Номер патента: US11737287B2. Автор: Yu-Chao Lin,Jung-Piao Chiu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-08-22.

Semiconductor device, semiconductor system and method of operating semiconductor device

Номер патента: US09906383B2. Автор: Chiwon Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-02-27.

Semiconductor device, semiconductor system, and method of controlling semiconductor device

Номер патента: US20240313776A1. Автор: Fumiya Watanabe,Kenro Kubota,Kazuhiko Satou,Atsuko SAEKI,Ryota Tsuchiya,Harumi ABE,Kanta NAGUMO. Владелец: Kioxia Corp. Дата публикации: 2024-09-19.

Semiconductor device, semiconductor system, and method of operating the semiconductor device

Номер патента: US20200388320A1. Автор: Soo Min Lee,Ki Hwan SEONG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-12-10.

Systems and methods for controlling a plurality of power semiconductor devices

Номер патента: WO2017117228A1. Автор: Jian Dai,Rajib Datta,Xu She,Fengfeng Tao,Paul Michael Szczesny,Tannous Frangieh. Владелец: GENERAL ELECTRIC COMPANY. Дата публикации: 2017-07-06.

Semiconductor device including capacitor and method of fabricating the same

Номер патента: US20240292596A1. Автор: Jungmin Park,HyungSuk Jung,Hanjin Lim,Intak Jeon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-08-29.

Systems and methods for controlling a plurality of power semiconductor devices

Номер патента: US09800132B2. Автор: Jian Dai,Rajib Datta,Xu She,Fengfeng Tao,Paul Michael Szczesny,Tannous Frangieh. Владелец: General Electric Co. Дата публикации: 2017-10-24.

Method of analyzing lattice strain of semiconductor device

Номер патента: US10410332B2. Автор: Gwang-Seon Byun,Myoung-Ki Ahn,Han-Saem Park,Hyun-koo KWAK,Su-Bong Shon,Ung-Keun Cho. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-09-10.

Method of analyzing lattice strain of semiconductor device

Номер патента: US20180012348A1. Автор: Gwang-Seon Byun,Myoung-Ki Ahn,Han-Saem Park,Hyun-koo KWAK,Su-Bong Shon,Ung-Keun Cho. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-01-11.

Network processing device and networks processing method of communication frames

Номер патента: EP3809639A1. Автор: Keiichiro Sano. Владелец: Renesas Electronics Corp. Дата публикации: 2021-04-21.

Electrode for source/drain of organic semiconductor device, organic semiconductor device using same, and method for manufacturing same

Номер патента: US12133397B2. Автор: Junichi Takeya,Shunichiro Watanabe,Tatsuyuki MAKITA. Владелец: University of Tokyo NUC. Дата публикации: 2024-10-29.

Semiconductor device, clock circuit, and control method of semiconductor device

Номер патента: US20220014191A1. Автор: Koji Kohara. Владелец: Kioxia Corp. Дата публикации: 2022-01-13.

Semiconductor device, communication systems and method for controlling the communication system

Номер патента: EP3678336A3. Автор: Keiichiro Sano,Jean Noel MOUTHE. Владелец: Renesas Electronics Corp. Дата публикации: 2020-08-12.

Semiconductor device, communication systems and method for controlling the communication system

Номер патента: US20200213148A1. Автор: Keiichiro Sano,Jean Noel MOUTHE. Владелец: Renesas Electronics Corp. Дата публикации: 2020-07-02.

Memory cell, method of forming the same, and semiconductor device having the same

Номер патента: US11864477B2. Автор: Tung-Ying Lee,Yu-Chao Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-01-02.

Apparatuses and methods for calibrating adjustable impedances of a semiconductor device

Номер патента: US20190334505A1. Автор: Dean Gans. Владелец: Micron Technology Inc. Дата публикации: 2019-10-31.

Semiconductor device and manufacturing method of semiconductor device

Номер патента: US20230225229A1. Автор: HE Qian,Taiwei CHIU,Tingying SHEN. Владелец: Xiamen Industrial Technology Research Institute Co Ltd. Дата публикации: 2023-07-13.

Semiconductor device and power off method of a semiconductor device

Номер патента: US20230315179A1. Автор: Dae Hwan Kim,Young Hoon Lee,Ho-Yeon JEON. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-10-05.

Semiconductor device and a manufacturing method of the semiconductor device

Номер патента: US20090189136A1. Автор: Nozomu Matsuzaki. Владелец: Renesas Technology Corp. Дата публикации: 2009-07-30.

Organic semiconductor structure, manufacturing method of the same, and organic semiconductor device

Номер патента: US20060113526A1. Автор: Hiroki Maeda,Junichi Hanna,Hiroaki Iino. Владелец: DAI NIPPON PRINTING CO LTD. Дата публикации: 2006-06-01.

Semiconductor device, semiconductor system, and control method of semiconductor device

Номер патента: US20200041547A1. Автор: Akira Murayama,Kazuki Fukuoka,Toshifumi Uemura,Yuko Kitaji,Yosuke Okazaki. Владелец: Renesas Electronics Corp. Дата публикации: 2020-02-06.

Semiconductor device and data outputting method of the same

Номер патента: US20090167413A1. Автор: Jae-Hyuk Im,Kee-Teok Park. Владелец: Hynix Semiconductor Inc. Дата публикации: 2009-07-02.

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Номер патента: US20240188330A1. Автор: Susumu Kawashima,Tomoaki Atsumi,Hideaki Shishido,Koji KUSUNOKI,Motoharu Saito. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2024-06-06.

Semiconductor device, semiconductor system, and control method of semiconductor device

Номер патента: US10033339B2. Автор: Hiroyuki Kuge. Владелец: Renesas Electronics Corp. Дата публикации: 2018-07-24.

PLL semiconductor device with testability, and method and apparatus for testing same

Номер патента: US20010028243A1. Автор: Kimitoshi Niratsuka. Владелец: Fujitsu Ltd. Дата публикации: 2001-10-11.

Apparatuses and methods for identifying memory devices of a semiconductor device sharing an external resistance

Номер патента: US20240030922A1. Автор: Dean Gans. Владелец: Lodestar Licensing Group LLC. Дата публикации: 2024-01-25.

Device and transmission/reception method of figure of package data in mobile communication system

Номер патента: RU2349032C1. Автор: Хван-Дзоон КВОН,Дзунг-Соо ДЗУНГ,Беом-Сик БАЕ,Дае-Гиун КИМ,Йоун-Сун КИМ,Дзин-Киу ХАН,Донг-Хи КИМ,Ю-Чул КИМ,Дае-Гиун КИМ (KR),Дзин-Киу ХАН (KR),Хван-Дзоон КВОН (KR),Донг-Хи КИМ (KR),Дзунг-Соо ДЗУНГ (KR),Беом-Сик БАЕ (KR),Ю-Чул КИМ (KR),Йоун-Сун КИМ (KR). Владелец: САМСУНГ ЭЛЕКТРОНИКС КО., ЛТД.. Дата публикации: 2009-03-10.

Semiconductor device, communication systems and method for controlling the communication system

Номер патента: US11115235B2. Автор: Keiichiro Sano,Jean Noel MOUTHE. Владелец: Renesas Electronics Corp. Дата публикации: 2021-09-07.

Apparatuses and methods for duty cycle adjustment of a semiconductor device

Номер патента: WO2020106823A1. Автор: Dean D. Gans. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2020-05-28.

Apparatuses and methods for duty cycle adjustment of a semiconductor device

Номер патента: US20220149828A1. Автор: Dean D. Gans. Владелец: Micron Technology Inc. Дата публикации: 2022-05-12.

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Номер патента: US11955977B2. Автор: Dean D. Gans. Владелец: Micron Technology Inc. Дата публикации: 2024-04-09.

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Номер патента: EP3884489A1. Автор: Dean D. Gans. Владелец: Micron Technology Inc. Дата публикации: 2021-09-29.

Semiconductor device, regulator circuit, and method for starting regulator circuit

Номер патента: US20240111321A1. Автор: Yoichi Fueki. Владелец: Lapis Technology Co Ltd. Дата публикации: 2024-04-04.

Memory cell, method of forming the same, and semiconductor device having the same

Номер патента: US20240090354A1. Автор: Tung-Ying Lee,Yu-Chao Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-03-14.

Photographing device and self-adaptive method of software functions and photographing parameters thereof

Номер патента: US12108138B2. Автор: Binbin Wang,Jun Hou,Yanli Huang. Владелец: Shenzhen Apeman Innovations Technology Co Ltd. Дата публикации: 2024-10-01.

Apparatuses and methods for calibrating adjustable impedances of a semiconductor device

Номер патента: US11916527B2. Автор: Dean Gans. Владелец: Lodestar Licensing Group LLC. Дата публикации: 2024-02-27.

Methods of correcting data errors and semiconductor devices used therein

Номер патента: US20170371746A1. Автор: Chang Hyun Kim. Владелец: SK hynix Inc. Дата публикации: 2017-12-28.

Apparatuses and methods for calibrating adjustable impedances of a semiconductor device

Номер патента: EP3552203A1. Автор: Dean Gans. Владелец: Micron Technology Inc. Дата публикации: 2019-10-16.

Apparatuses and methods for calibrating adjustable impedances of a semiconductor device

Номер патента: US20180167055A1. Автор: Dean Gans. Владелец: Micron Technology Inc. Дата публикации: 2018-06-14.

Apparatuses and methods for calibrating adjustable impedances of a semiconductor device

Номер патента: US20210099160A1. Автор: Dean Gans. Владелец: Micron Technology Inc. Дата публикации: 2021-04-01.

Apparatuses and methods for calibrating adjustable impedances of a semiconductor device

Номер патента: WO2018107076A1. Автор: Dean Gans. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2018-06-14.

Apparatuses and methods for calibrating adjustable impedances of a semiconductor device

Номер патента: US20230137651A1. Автор: Dean Gans. Владелец: Micron Technology Inc. Дата публикации: 2023-05-04.

Apparatuses and methods for calibrating adjustable impedances of a semiconductor device

Номер патента: US20240154605A1. Автор: Dean Gans. Владелец: Lodestar Licensing Group LLC. Дата публикации: 2024-05-09.

Apparatuses and methods for calibrating adjustable impedances of a semiconductor device

Номер патента: US20240223160A1. Автор: Dean Gans. Владелец: Lodestar Licensing Group LLC. Дата публикации: 2024-07-04.

Display device and image display method of the same

Номер патента: EP3699902A1. Автор: Kwansik Yang,Kilsoo Choi. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-08-26.

Communication device and call transfer method of same

Номер патента: US20130157635A1. Автор: Qiang You. Владелец: Futaihua Industry Shenzhen Co Ltd. Дата публикации: 2013-06-20.

Power supply system, electronic device, and electricity distribution method of electronic device

Номер патента: US09935467B2. Автор: Zhiji DENG. Владелец: Huawei Technologies Co Ltd. Дата публикации: 2018-04-03.

Display device and haptic feedback method of the same

Номер патента: US11762469B2. Автор: Jung Hun NOH,Yi Joon Ahn,Ga Na KIM,Jae Been LEE,Eun Kyung Yeon,So Young YEO. Владелец: Samsung Display Co Ltd. Дата публикации: 2023-09-19.

HDMI-CEC device and address allocation method of HDMI-CEC device network

Номер патента: US09411768B2. Автор: Jeng-Li Huang. Владелец: Hon Hai Precision Industry Co Ltd. Дата публикации: 2016-08-09.

Display device and visibility improvement method of image therefor

Номер патента: US20240274102A1. Автор: Ji Won Lee,Yong Hee Kim,Seung Hyun Lee,Hee Jin Lee,Jun Min Lee,Byung Cheol Song,Jun Ho HEO,Seung Wan Yu,Se Ha JEONG. Владелец: LX Semicon Co Ltd. Дата публикации: 2024-08-15.

Display device and visibility improvement method of image therefor

Номер патента: EP4418254A1. Автор: Ji Won Lee,Yong Hee Kim,Seung Hyun Lee,Hee Jin Lee,Jun Min Lee,Byung Cheol Song,Jun Ho HEO,Seung Wan Yu,Se Ha JEONG. Владелец: LX Semicon Co Ltd. Дата публикации: 2024-08-21.

Electrical components and methods and systems of manufacturing electrical components

Номер патента: WO2014055271A1. Автор: Helge Schmidt,Marjorie Kay Myers,Soenke Sachs,Michael Leidner,Eva HENSHEL,Dominique Marie M. FRECKMANN. Владелец: Tyco Electronics AMP GMBH. Дата публикации: 2014-04-10.

Electrical components and methods and systems of manufacturing electrical components

Номер патента: EP2904883A1. Автор: Helge Schmidt,Marjorie Kay Myers,Soenke Sachs,Michael Leidner,Eva HENSHEL,Dominique Marie M. FRECKMANN. Владелец: Tyco Electronics Corp. Дата публикации: 2015-08-12.

Method of measuring trench depth of semiconductor device

Номер патента: US6500683B1. Автор: Masakazu Nakabayashi,Tadayuki Yoshiyama. Владелец: Mitsubishi Electric Corp. Дата публикации: 2002-12-31.

Wireless network system, wireless device, and network registration method of the wireless device

Номер патента: US09838122B2. Автор: Young-jun Choi,Seong-man Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-12-05.

Method of fabrication of an amorphous semiconductor device on a substrate

Номер патента: US4167806A. Автор: Pierre Kumurdjian. Владелец: Commissariat a lEnergie Atomique CEA. Дата публикации: 1979-09-18.

Electronic device and direction switching method of the electronic device

Номер патента: US09445168B2. Автор: Tao Li,Dejun Wang,Shaoping PENG,Yifei Song,Shunyong Yang. Владелец: Lenovo Beijing Ltd. Дата публикации: 2016-09-13.

Predictive coding method, predictive coding device and predictive coding method of motion vector and predictive decoding method, predictive decoding device and motion vector prediction decoding program

Номер патента: RU2731026C1. Автор: Чоонг Сенг БООН,Йосинори СУДЗУКИ,Акира ФУДЗИБАЯСИ. Владелец: Нтт Докомо, Инк.. Дата публикации: 2020-08-28.

Photographing device and self-adaptive method of software functions and photographing parameters thereof

Номер патента: EP4254973A1. Автор: Binbin Wang,Jun Hou,Yanli Huang. Владелец: Shenzhen Apeman Innovations Technology Co Ltd. Дата публикации: 2023-10-04.

Photographing device and self-adaptive method of software functions and photographing parameters thereof

Номер патента: US20230319389A1. Автор: Binbin Wang,Jun Hou,Yanli Huang. Владелец: Shenzhen Apeman Innovations Technology Co Ltd. Дата публикации: 2023-10-05.

Electronic device, system of electronic device, and system operating method of electronic device

Номер патента: US20200293262A1. Автор: Dae Won Kim,Ho Jung Lee,Young Seok Kim,Kee Hyun Nam,Hyoung Cheol Lee. Владелец: Samsung Display Co Ltd. Дата публикации: 2020-09-17.

Mobile communication device and computer-implemented method of operating a mobile communication device

Номер патента: CA3212739A1. Автор: Jeroen Frederik Jan Stoker,Timon van den Brink,Roland Matthijs Zonneveld. Владелец: Lyfo BV. Дата публикации: 2022-09-29.

Mobile communication device and computer-implemented method of operating a mobile communication device

Номер патента: AU2022245816A1. Автор: Jeroen Frederik Jan Stoker,Timon van den Brink,Roland Matthijs Zonneveld. Владелец: Lyfo BV. Дата публикации: 2023-09-28.

Mobile communication device and computer-implemented method of operating a mobile communication device

Номер патента: US20240056930A1. Автор: Jeroen Frederik Jan Stoker,Timon van den Brink,Roland Matthijs Zonneveld. Владелец: Lyfo BV. Дата публикации: 2024-02-15.

Camera device and auto-focusing method of varying focal length according to time variation

Номер патента: US20180097987A1. Автор: Kuo-Yeh Hsieh,Chung-Cheng CHENG. Владелец: Vivotek Inc. Дата публикации: 2018-04-05.

Camera device and auto-focusing method of varying focal length according to time variation

Номер патента: US10237471B2. Автор: Kuo-Yeh Hsieh,Chung-Cheng CHENG. Владелец: Vivotek Inc. Дата публикации: 2019-03-19.

Electronic device and frame transmission method of electronic device

Номер патента: US11757789B2. Автор: Han-Yi Hung,Yi-Kuang Ko,Sheng-Pin Lin,Cheng-Yan Wu. Владелец: Realtek Semiconductor Corp. Дата публикации: 2023-09-12.

Electronic device, and wireless communication method of electronic device

Номер патента: US20190246428A1. Автор: Soo-Jin Park,Su-Ha Yoon,Eui-Chang JUNG,Sung-Chul Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-08-08.

Electronic device and an operating method of the electronic device

Номер патента: EP4358354A1. Автор: Dongjoon Kim,Junhan BAE,Duseung OH,Woonhyung HEO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-04-24.

Image forming apparatus configured to partition menu information transmitted from a main device to a control device, control device, and screen display method of performing same

Номер патента: US10491763B2. Автор: Hisashi NAITOH. Владелец: Ricoh Co Ltd. Дата публикации: 2019-11-26.

Clamping device, electronic device and remote control method of electronic device

Номер патента: US20230362488A1. Автор: Chun-Wei Lu,Chi-Hwa Ho,Yea-Chin Yeh,Yi-Teng Tsai. Владелец: ASUSTeK Computer Inc. Дата публикации: 2023-11-09.

Induction heating device and vessel-sensing method of the induction heating device

Номер патента: US11672053B2. Автор: Shinjae Jeong. Владелец: LG ELECTRONICS INC. Дата публикации: 2023-06-06.

Touch display device and touch driving method of same

Номер патента: US11768556B2. Автор: Jian Ye. Владелец: Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd. Дата публикации: 2023-09-26.

Image sensing device and image processing method of the same

Номер патента: US20230300481A1. Автор: Hee Kang,Chan Young Jang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-09-21.

Projection device and safety protection method of projection device

Номер патента: US20240215133A1. Автор: Sheng-Han Yang,Yao Lei Huang. Владелец: Coretronic Corp. Дата публикации: 2024-06-27.

Wireless network system, wireless device, and network registration method of the wireless device

Номер патента: CA2824968C. Автор: Young-jun Choi,Seong-man Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-04-03.

External data-input device and speech inputting method of portable electronical device

Номер патента: US20030008678A1. Автор: Winky Lin. Владелец: Silitek Corp. Дата публикации: 2003-01-09.

Display device and image display method of display device

Номер патента: US20200059627A1. Автор: Keita SANO. Владелец: NEC Display Solutions Ltd. Дата публикации: 2020-02-20.

Reduced size semiconductor device and method for manufacture thereof

Номер патента: US09424926B2. Автор: Kuan Fu Chen,Ya Jui Lee. Владелец: Macronix International Co Ltd. Дата публикации: 2016-08-23.

System and method for enabling maximum performance operation within an extended ambient temperature range

Номер патента: US09432033B2. Автор: Jaideep Dastidar. Владелец: FREESCALE SEMICONDUCTOR INC. Дата публикации: 2016-08-30.

Semiconductor device and method of driving the same

Номер патента: US09568615B2. Автор: Hajime Kimura. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2017-02-14.

Systems and methods for device authentication in supply chain

Номер патента: US12088695B2. Автор: Saikumar Jayaraman,David Kehlet,Fariaz KARIM,Shuanghong SUN. Владелец: Intel Corp. Дата публикации: 2024-09-10.

Semiconductor device and fabrication method thereof, memory and memory system

Номер патента: US20240306364A1. Автор: Zhaoyun TANG. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-09-12.

System and method for semiconductor device compact modeling using multiple specialized artificial neural networks for each semiconductor device operation region

Номер патента: US20230385494A1. Автор: Jung Hwan Park,Chan Woo Park. Владелец: Alsemy Inc. Дата публикации: 2023-11-30.

Semiconductor device fabrication mask and method of manufacturing the same

Номер патента: US20110053058A1. Автор: Haruko Akutsu,Kyo Otsubo,Makiko Katano,Ayako Mizuno. Владелец: Individual. Дата публикации: 2011-03-03.

Semiconductor device with transducer and method for forming the same

Номер патента: US20240050987A1. Автор: Chun-Hao Chou,Kuo-Cheng Lee,Ming-Hsien Yang,Sheng Kai Yeh. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-02-15.

Method of use time management for semiconductor device and semiconductor device including use time managing circuit

Номер патента: US09711205B2. Автор: Chul-woo Park,Young-Soo Sohn,Jong-Pil Son. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-07-18.

Apparatus and method of exposing light to a semiconductor device having a curved surface

Номер патента: WO2004063813A1. Автор: Nobuo Takeda,Ikuo Nishimoto,Ichitaroh Satoh. Владелец: YAMATAKE CORPORATION. Дата публикации: 2004-07-29.

Method of generating specific information on semiconductor device, method of managing specific information on semiconductor device, and manufacturing apparatus for semiconductor device

Номер патента: US20240289570A1. Автор: Hiroshi Miyoshi,Noriyuki Yabuoshi. Владелец: Mitsubishi Electric Corp. Дата публикации: 2024-08-29.

Semiconductor Device and Method for Tracing a Memory of a Semiconductor Device

Номер патента: US20130024733A1. Автор: Rainer Troppmann,Frank Noha. Владелец: Texas Instruments Inc. Дата публикации: 2013-01-24.

Semiconductor device and method for tracing a memory of a semiconductor device

Номер патента: US8738969B2. Автор: Rainer Troppmann,Frank Noha. Владелец: Texas Instruments Inc. Дата публикации: 2014-05-27.

Semiconductor device, photonic circuit and method for adjusting resonant wavelength of optical modulator

Номер патента: US20240248255A1. Автор: Stefan Rusu,Chewn-Pu Jou,Lan-Chou Cho,Cheng-Tse Tang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-25.

Semiconductor device and temperature control method of semiconductor device

Номер патента: US09625986B2. Автор: Yasuhiko Kurosawa,Shuuji Matsumoto. Владелец: Toshiba Corp. Дата публикации: 2017-04-18.

Semiconductor device test system and method

Номер патента: US20080246505A1. Автор: Carsten Ohlhoff,Markus Kollwitz. Владелец: Qimonda AG. Дата публикации: 2008-10-09.

System for and method of designing and manufacturing a semiconductor device

Номер патента: US20020045280A1. Автор: Keith Strickland,Arshad Madni,Lance Trodd,Chris Powell. Владелец: Zarlink Semiconductor Ltd. Дата публикации: 2002-04-18.

Semiconductor devices with cavities and methods for fabricating semiconductor devices with cavities

Номер патента: US09932224B2. Автор: Rakesh Kumar,Pradeep Yelehanka,Siddharth Chakravarty. Владелец: GLOBALFOUNDRIES SINGAPORE PTE LTD. Дата публикации: 2018-04-03.

Semiconductor device verification system and method

Номер патента: US20040125675A1. Автор: Hong Kim,Ajaykumar Thadhlani. Владелец: Sun Microsystems Inc. Дата публикации: 2004-07-01.

Apparatus and method to monitor thermal runaway in a semiconductor device

Номер патента: US09618560B2. Автор: Sam Ziqun Zhao. Владелец: Avago Technologies General IP Singapore Pte Ltd. Дата публикации: 2017-04-11.

Method of designing and manufacturing semiconductor device

Номер патента: US20080256496A1. Автор: Hiroshi Watanabe,Toshitake Yaegashi,Shigeyuki Takagi,Shigeru Kinoshita. Владелец: Toshiba Corp. Дата публикации: 2008-10-16.

Semiconductor device, device, and electronic device

Номер патента: US09990207B2. Автор: Yoshiyuki Kurokawa. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2018-06-05.

Semiconductor device control circuit and method thereof

Номер патента: US09640272B2. Автор: Nobuhiko Ito. Владелец: Powerchip Technology Corp. Дата публикации: 2017-05-02.

Computing device executing program performing method of analyzing power noise in semiconductor device, semiconductor device design method, and program storage medium storing program

Номер патента: US09958495B2. Автор: Young Hoe Cheon,Chan Seok Hwang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-05-01.

Apparatus and method for controlling die force in a semiconductor device testing assembly

Номер патента: WO2006138655A9. Автор: Troy Taylor,Steve Wetzel. Владелец: Steve Wetzel. Дата публикации: 2007-04-19.

Heating element composition, and method and device of manufacturing eye mask pack

Номер патента: US20230277371A1. Автор: Sung Ryong YU,Ju Taek KIM. Владелец: Hummingavis Co ltd. Дата публикации: 2023-09-07.

Semiconductor device, semiconductor system, and method for use in operating the same based on operation mode information

Номер патента: US20160372171A1. Автор: Bok Rim KO. Владелец: SK hynix Inc. Дата публикации: 2016-12-22.

Method of accessing word line in semiconductor device

Номер патента: US20050232064A1. Автор: Yin Lee. Владелец: Hynix Semiconductor Inc. Дата публикации: 2005-10-20.

Pattern correcting method of mask for manufacturing a semiconductor device

Номер патента: US20080212869A1. Автор: Koji Hashimoto,Satoshi Usui,Kei Yoshikawa. Владелец: Toshiba Corp. Дата публикации: 2008-09-04.

Apparatuses and methods for refreshing memory cells of a semiconductor device

Номер патента: US09984738B2. Автор: Kenji Yoshida,Hiroki Fujisawa. Владелец: Micron Technology Inc. Дата публикации: 2018-05-29.

Semiconductor device, semiconductor system, and method for use in operating the same based on operation mode information

Номер патента: US09576627B2. Автор: Bok Rim KO. Владелец: SK hynix Inc. Дата публикации: 2017-02-21.

System for designing a semiconductor device, device made, and method of using the system

Номер патента: US20140042585A1. Автор: Jaw-Juinn Horng,Yung-Chow Peng,Wen-Shen Chou. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2014-02-13.

Method and apparatus for determining defect detection sensitivity data, control method of defect detection apparatus, and method and apparatus for detecting defect of semiconductor devices

Номер патента: US20040151362A1. Автор: Akira Hamaguchi,Takamitsu Nagai. Владелец: Individual. Дата публикации: 2004-08-05.

Antiretroviral cyclonucleoside compositions and methods and articles of manufacture therewith

Номер патента: WO2012100017A3. Автор: Jia GUO,Yuntao Wu,Todd W. HAWLEY. Владелец: Lentx, Inc.. Дата публикации: 2012-09-27.

Semiconductor device including memory cell and sense amplifer, and IC card including semiconductor device

Номер патента: US9543007B2. Автор: Ryotaro Azuma,Yoshikazu Katoh. Владелец: Panasonic Intellectual Property Management Co Ltd. Дата публикации: 2017-01-10.

System for designing a semiconductor device, device made, and method of using the system

Номер патента: US11914940B2. Автор: Jaw-Juinn Horng,Yung-Chow Peng,Wen-Shen Chou. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-02-27.

System for designing a semiconductor device, device made, and method of using the system

Номер патента: US20240193343A1. Автор: Jaw-Juinn Horng,Yung-Chow Peng,Wen-Shen Chou. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-06-13.

Method of use time management for semiconductor device and semiconductor device including use time managing circuit

Номер патента: US20160104522A1. Автор: Chul-woo Park,Young-Soo Sohn,Jong-Pil Son. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-04-14.

Semiconductor devices with cavities and methods for fabricating semiconductor devices with cavities

Номер патента: US20170174507A1. Автор: Rakesh Kumar,Pradeep Yelehanka,Siddharth Chakravarty. Владелец: GLOBALFOUNDRIES SINGAPORE PTE LTD. Дата публикации: 2017-06-22.

Semiconductor device, memory system, and method of correcting duty cycle of output signal from semiconductor device

Номер патента: US11961586B2. Автор: Kensuke Yamamoto. Владелец: Kioxia Corp. Дата публикации: 2024-04-16.

Semiconductor device simulation system and method

Номер патента: EP4312144A1. Автор: Jae Myung CHOE,Won Ik Jang,Sang Hoon Myung. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-01-31.

Semiconductor device and temperature control method of semiconductor device

Номер патента: US20160266640A1. Автор: Yasuhiko Kurosawa,Shuuji Matsumoto. Владелец: Toshiba Corp. Дата публикации: 2016-09-15.

Semiconductor device simulation system and method

Номер патента: US20240037307A1. Автор: Jae Myung CHOE,Won Ik Jang,Sang Hoon Myung. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-02-01.

Semiconductor device and self-diagnostic method of semiconductor device

Номер патента: US20220328123A1. Автор: Terunori Kubo,Hirotsugu Nakamura,Daisuke Katagiri. Владелец: Renesas Electronics Corp. Дата публикации: 2022-10-13.

Reticle for use in exposing semiconductor, method of producing the reticle, and semiconductor device

Номер патента: US6352800B1. Автор: Toshifumi Suganaga. Владелец: Mitsubishi Electric Corp. Дата публикации: 2002-03-05.

Semiconductor device, device, and electronic device

Номер патента: US20150227378A1. Автор: Yoshiyuki Kurokawa. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2015-08-13.

Semiconductor device, semiconductor system, and control method of semiconductor device

Номер патента: US20170177062A1. Автор: Hiroshi Ueki. Владелец: Renesas Electronics Corp. Дата публикации: 2017-06-22.

Semiconductor device manufacturing system and method for manufacturing semiconductor devices

Номер патента: US20050095774A1. Автор: Masahiro Abe,Tatsuo Akiyama,Akira Ogawa,Shigeru Komatsu,Yukihiro Ushiku,Hidenori Kakinuma,Shunji Shuto. Владелец: Individual. Дата публикации: 2005-05-05.

Semiconductor device, mobile apparatus, and method of controlling mobile apparatus

Номер патента: US20200387717A1. Автор: Keisuke Matsumoto,Remi MIYAMOTO. Владелец: Renesas Electronics Corp. Дата публикации: 2020-12-10.

Semiconductor device, control system, and control method of semiconductor device

Номер патента: US20200073806A1. Автор: Toshiyuki Kaya,Shinichi Shibahara,Yuki Hayakawa. Владелец: Renesas Electronics Corp. Дата публикации: 2020-03-05.

Ultrasonic measuring device, and ultrasonic measuring method of flow rate

Номер патента: RU2488836C2. Автор: Торальф ДИЦ,Ларс ЭМИХЕН,Джон ЛЭНСИНГ. Владелец: ЗИК Энджиниринг ГмбХ. Дата публикации: 2013-07-27.

Semiconductor device, photonic circuit and method for adjusting resonant wavelength of optical modulator

Номер патента: US20230258860A1. Автор: Stefan Rusu,Chewn-Pu Jou,Lan-Chou Cho,Cheng-Tse Tang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-08-17.

Semiconductor device, semiconductor system and method for operating semiconductor device

Номер патента: US11747853B2. Автор: Jae Gon Lee,AH Chan Kim,Ho Yeon Jeon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-09-05.

Semiconductor device, photonic circuit and method for adjusting resonant wavelength of optical modulator

Номер патента: US11953720B2. Автор: Stefan Rusu,Chewn-Pu Jou,Lan-Chou Cho,Cheng-Tse Tang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-04-09.

Image sensor, optical pointing device and motion calculating method of optical pointing device

Номер патента: US20050200600A1. Автор: Bang-Won Lee. Владелец: Individual. Дата публикации: 2005-09-15.

Lidar device and ranging adjustment method of the same

Номер патента: US20230350010A1. Автор: Changsheng GONG. Владелец: Suteng Innovation Technology Co Ltd. Дата публикации: 2023-11-02.

Medical device and computer-implemented method of predicting risk, occurrence or progression of adverse health conditions in test subjects in subpopulations arbitrarily selected from a total population

Номер патента: EP3695418A1. Автор: Luca Neri,Ulrich TSCHULENA,Francesco BELLOCCHIO,Carlo Barbieri,Wencke ARMSEN. Владелец: FRESENIUS MEDICAL CARE DEUTSCHLAND GMBH. Дата публикации: 2020-08-19.

Storage device and data processing method of storage device

Номер патента: EP2151784A3. Автор: Shin c/o Hitachi Ltd Intellectual Property Group Nishihara,Shuichi c/oHitachi Ltd. Intellectual Property Group Yagi,Yasuyuki c/oHitachi Ltd. Intellectual Property Group Nagasoe. Владелец: HITACHI LTD. Дата публикации: 2011-03-09.

Backflow prevention device of light metal injection device and backflow prevention method of light metal injection device

Номер патента: US20210379649A1. Автор: Tadashi Morikawa. Владелец: Sodick Co Ltd. Дата публикации: 2021-12-09.

Semiconductor device design system and method, and software product for the same

Номер патента: US20060190876A1. Автор: Kenta Yamada. Владелец: NEC Electronics Corp. Дата публикации: 2006-08-24.

Semiconductor device, electronic control unit, verification method of electronic control unit and manufacturing method of electronic control unit

Номер патента: US11845387B2. Автор: Masayuki Daito. Владелец: Renesas Electronics Corp. Дата публикации: 2023-12-19.

Storage device and an operating method of a storage controller

Номер патента: US20240264766A1. Автор: Sang Hoon YOO,Wan-soo Choi,Young Ick CHO,Young Sun YOUN. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-08-08.

Memory device and read/write method of memory device

Номер патента: US12051392B2. Автор: Chang Sue Seo. Владелец: LX Semicon Co Ltd. Дата публикации: 2024-07-30.

A storage device and an operating method of a storage controller

Номер патента: EP4414852A1. Автор: Sang Hoon YOO,Wan-soo Choi,Young Ick CHO,Young Sun YOUN. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-08-14.

Storage control device controlling access to a storage device and access controlling method of a storage device

Номер патента: US09632950B2. Автор: Motohiro Sakai,Akihito Kobayashi,Takuro Kumabe,Shinichiro Matsumura,Takahiro Ohyama. Владелец: Fujitsu Ltd. Дата публикации: 2017-04-25.

Shear bonding device and shear bonding method of metal plates

Номер патента: US09579747B2. Автор: In Tai Jin. Владелец: Pukyong National University Business Incubator Center. Дата публикации: 2017-02-28.

Electronic device and gesture input method of item selection

Номер патента: US09529530B2. Автор: Edward Lau. Владелец: Individual. Дата публикации: 2016-12-27.

Method of forming resist pattern and semiconductor device manufactured with the same

Номер патента: US20080241489A1. Автор: Takeo Ishibashi,Mamoru Terai,Atsumi Yamaguchi,Takuya Hagiwara. Владелец: Renesas Technology Corp. Дата публикации: 2008-10-02.

Read enable signal adjusting flash memory device and read control method of flash memory device

Номер патента: EP2232500A1. Автор: Hyunmo Chung,Hanmook Park. Владелец: Indilinx Co Ltd. Дата публикации: 2010-09-29.

Read enable signal adjusting flash memory device and read control method of flash memory device

Номер патента: WO2009084796A1. Автор: Hyunmo Chung,Hanmook Park. Владелец: Indilinx Co., Ltd.. Дата публикации: 2009-07-09.

Image display device and memory management method of the same

Номер патента: US09529931B2. Автор: Chulmin Son. Владелец: LG ELECTRONICS INC. Дата публикации: 2016-12-27.

Radar device and data output method of radar device

Номер патента: EP4411416A1. Автор: Hirosada Miyaoka,Ryosuke Yamada. Владелец: Sony Semiconductor Solutions Corp. Дата публикации: 2024-08-07.

Temperature warning device and temperature warning method of friction element

Номер патента: US09897202B2. Автор: Takeshi Yamamoto,Hidetoshi Tsukidate,Kenichi Ooshima. Владелец: Nissan Motor Co Ltd. Дата публикации: 2018-02-20.

Methods of testing cell arrays and semiconductor devices executing the same

Номер патента: US20180102183A1. Автор: Young Bo Shim. Владелец: SK hynix Inc. Дата публикации: 2018-04-12.

Electronic devices and corresponding hybrid methods of low light image enhancement

Номер патента: US12079973B2. Автор: Hong Zhao,Chao Ma,Zhicheng FU,Yunming Wang,Joseph Nasti. Владелец: MOTOROLA MOBILITY LLC. Дата публикации: 2024-09-03.

Variable transmission and method and system of manufacture

Номер патента: EP2844891A1. Автор: Douglas Magyari. Владелец: Individual. Дата публикации: 2015-03-11.

Variable transmission and method and system of manufacture

Номер патента: US20150126327A1. Автор: Douglas Magyari. Владелец: Individual. Дата публикации: 2015-05-07.

Storage device and garbage collection method of data storage system having the storage device

Номер патента: US09858182B2. Автор: JongWon Lee,Kangho Roh,Wooseok CHANG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-01-02.

Machine learning device and maching learning method of machine learning device

Номер патента: US20190370661A1. Автор: Namyeong Kwon,Hayoung JOO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-12-05.

Highly custom and scalable design system and method for articles of manufacture

Номер патента: WO2019067629A1. Автор: Christopher Gregory Barnes,Ryan Lynn Belcher,Wayne Alexander McMann. Владелец: Siege Tek Llc. Дата публикации: 2019-04-04.

Continuous-cast slab, method and apparatus of manufacturing the same, and method and apparatus of manufacturing thick steel plate

Номер патента: CA2973075C. Автор: Toshiaki Mizoguchi,Hiroaki Uchiyama,Shinji Nagai,Hideaki Sakurai,Daisuke Sakai,Shuntaro Imai,Ryousuke TAKATA. Владелец: Nippon Steel and Sumitomo Metal Corp. Дата публикации: 2018-11-20.

Adhesive compositions and methods and articles of manufacture comprising same

Номер патента: US5942330A. Автор: Ronald J. Kelley. Владелец: Bostik Inc. Дата публикации: 1999-08-24.

Fabric for an architectural covering and method and apparatus of manufacturing same

Номер патента: CA2174915C. Автор: Paul G. Swiszcz,Wendell B. Colson,Ricardo Ramirez,Dwight Greenough. Владелец: HUNTER DOUGLAS INC. Дата публикации: 1999-06-15.

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Номер патента: US20120003831A1. Автор: . Владелец: . Дата публикации: 2012-01-05.

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Номер патента: US20120001260A1. Автор: . Владелец: . Дата публикации: 2012-01-05.

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Номер патента: US20120001312A1. Автор: . Владелец: Panasonic Corporation. Дата публикации: 2012-01-05.

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Номер патента: US20120001326A1. Автор: . Владелец: STATS CHIPPAC, LTD.. Дата публикации: 2012-01-05.

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