Semiconductor device structure and methods of forming the same.

Semiconductor device structure and methods of forming the same

Номер патента: US20230402455A1
Опубликовано: 14-12-2023
Автор(ы): Jih-Jse Lin, Ryan Chia-Jen Chen, Sheng-Yi Hsiao, Shu-Yuan Ku, Tzu-Ging LIN, Ya-Yi Tsai, Yih-Ann Lin
Принадлежит: Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Рисунок 1. Взаимосвязь патентов (ближайшие 20).

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