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Semiconductor device and manufacturing method of the semiconductor device

Номер патента: US11778822B2
Опубликовано: 03-10-2023
Автор(ы): Jae Hyoung Lee
Принадлежит: SK hynix Inc
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Method of manufacturing a semiconductor device using a thermally decomposable layer, a semiconductor manufacturing apparatus, and the semiconductor device

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Methods of forming air spacers in semiconductor devices

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Semiconductor device packages including conductors electrically connecting stacked semiconductor devices by extending along surfaces of the semiconductor devices

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Method of multiple patterning to form semiconductor devices

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Extrusion Device and Extrusion Molding Die Used by Same, Monitoring Device and Program, Strand Manufacturing Method, and Strand Diameter Adjustment Method

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