Semiconductor device, manufacturing method thereof, and electro-optical device
Номер патента: JP2900229B2
Опубликовано: 02-06-1999
Автор(ы): 康行 荒井, 聡 寺本, 舜平 山崎
Принадлежит: Semiconductor Energy Laboratory Co Ltd
Опубликовано: 02-06-1999
Автор(ы): 康行 荒井, 聡 寺本, 舜平 山崎
Принадлежит: Semiconductor Energy Laboratory Co Ltd
Semiconductor device having semiconductor layer that includes channel region formed into concave shape, electro-optical device, method of manufacturing semiconductor device, method of manufacturing electro-optical device, and electronic apparatus
Номер патента: US09865620B2. Автор: Masashi Nakagawa. Владелец: Seiko Epson Corp. Дата публикации: 2018-01-09.