Methods of forming semiconductor devices and structures thereof

06-02-2018 дата публикации

Номер:

US09887100B2

Автор: Chia-Cheng Ho, Chih Chieh Yeh, Tsung-Lin Lee, Tzu-Chiang CHEN, Wei-Jen Lai

Принадлежит: Taiwan Semiconductor Manufacturing Co TSMC Ltd

Контакты:

Номер заявки:

Дата заявки:

CPC - классификация

H H0 H01 H01L H01L2 H01L21 H01L21/H01L21/3 H01L21/32 H01L21/321 H01L21/3211 H01L21/32115 H01L21/8 H01L21/82 H01L21/823 H01L21/8234 H01L21/82343 H01L21/823431 H01L21/8238 H01L21/82382 H01L21/823821 H01L21/84 H01L21/845 H01L27 H01L27/H01L27/1 H01L27/12 H01L27/121 H01L27/1211 H01L29 H01L29/H01L29/5 H01L29/51 H01L29/517 H01L29/6 H01L29/66 H01L29/665 H01L29/6654 H01L29/66545 H01L29/7 H01L29/78 H01L29/784 H01L29/7848

IPC - классификация

H H0 H01 H01L H01L2 H01L21 H01L21/H01L21/3 H01L21/32 H01L29 H01L29/H01L29/1 H01L29/16 H01L29/165 H01L29/5 H01L29/51 H01L29/513

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