Magnetic random access memory device and method of forming the same

12-01-2010 дата публикации

Номер:

US7645619B2

Автор: Hyun-Jo Kim, Jang-eun Lee, Jun-Soo Bae, Kyung-Tae Nam, Se-Chung Oh, Young-ki Ha

Принадлежит: SAMSUNG ELECTRONICS CO LTD

Контакты:

Номер заявки:

Дата заявки:

CPC - классификация

B B8 B82 B82Y B82Y1 B82Y10 B82Y10/B82Y10/0 B82Y10/00 B82Y2 B82Y25 B82Y25/B82Y25/0 B82Y25/00 G G1 G11 G11B G11B5 G11B5/G11B5/3 G11B5/39 G11B5/390 G11B5/3909 G11C G11C1 G11C11 G11C11/G11C11/1 G11C11/16 H H0 H01 H01L H01L2 H01L27 H01L27/H01L27/1 H01L27/10 H01L27/105 H1 H10 H10B H10B6 H10B61 H10B61/H10B61/2 H10B61/22 H10N H10N5 H10N50 H10N50/H10N50/0 H10N50/01 H10N50/1 H10N50/10 Y Y1 Y10 Y10T Y10T2 Y10T29 Y10T29/Y10T29/4 Y10T29/49 Y10T29/490 Y10T29/4903 Y10T29/49034 Y10T29/4904 Y10T29/49044

IPC - классификация

B B8 B82 B82Y B82Y2 B82Y25 B82Y25/B82Y25/0 B82Y25/00 G G1 G11 G11C G11C1 G11C11 G11C11/G11C11/1 G11C11/16 H H0 H01 H01L H01L2 H01L29 H01L29/H01L29/7 H01L29/77 H01L29/775

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