Integrierte Anschlussanordnung und Herstellungsverfahren

Integrierte Anschlussanordnung (10), mit einer elektrisch leitfähigen äußeren Leitstruktur (44), die zumindest teilweise oder vollständig in einer Aussparung (37) einer elektrisch isolierenden Isolierschicht (34, 36) angeordnet ist, mit einer am Boden der Aussparung (37) auf der einen Seite der Aussparung (37) angeordneten elektrisch leitfähigen inneren Leitstruktur (22), die am Boden der Aussparung (37) in einem Berührungsgebiet an die äußere Leitstruktur (44) grenzt, mit einer an der äußeren Leitstruktur (44) auf der anderen Seite der Aussparung (37) angeordneten Kontaktfläche (B1), wobei in Normalenrichtung der am Berührungsgebiet angrenzenden Fläche der inneren Leitstruktur (22) gesehen das Berührungsgebiet die Kontaktfläche nicht überlappt, und wobei der Boden der Aussparung (37) in der Normalenrichtung gesehen überlappend zu mindestens der halben Kontaktfläche oder überlappend zur gesamten Kontaktfläche angeordnet ist, dadurch gekennzeichnet, dass die äußere Leitstruktur (44) mindestens ...

LEISTUNGSKONTAKTE ZUM AUFSCHLAG HOHER STRÖME PRO ANSCHLUSS IN SILIZIUMTECHNOLOGIE

SUBSTRATE WITH A METALLIZATION DETENTION LAYER

Semiconductor device and method of formation

Structures and methods for improving solder bump connections in semiconductor devices

Structures with improved solder bump connections and methods of fabricating such structures are provided herein. The method includes forming an upper wiring layer in a dielectric layer and depositing one or more dielectric layers on the upper wiring layer. The method further includes forming a plurality of discrete trenches in the one or more dielectric layers extending to the upper wiring layer. The method further includes depositing a ball limiting metallurgy or under bump metallurgy in the plurality of discrete trenches to form discrete metal islands in contact with the upper wring layer. A solder bump is formed in electrical connection to the plurality of the discrete metal islands.

A METHOD FOR CARRYING OUT A STRUCTURE OF JOINING

La présente invention se rapporte à un processus de réalisation d'une structure de connexion (2200) dans un substrat semiconducteur (1000), et au substrat semiconducteur réalisé en conséquence. Le processus de la présente invention, le substrat semiconducteur (1000) comportant au moins une première surface et étant prévu pour une intégration 3D avec un second substrat (1700) le long de la première surface, dans lequel l'intégration 3D est sujette à un défaut latéral d'alignement dans au moins une dimension présentant une valeur de défaut d'alignement , peut inclure l'étape consistant à faire croître une structure de barrière de diffusion (2211) permettant d'empêcher la diffusion d'éléments en dehors d'une couche conductrice dans le reste du substrat semiconducteur, est caractérisé en ce qu'une première surface d'extrémité , représentant la surface la plus à l'extérieur de la structure de barrière de diffusion (2211), sensiblement parallèle à la première surface, le long d'une direction ...

Semiconductor device electrical conductor

METHOD FOR MAKING AN ELECTRICAL INTERCONNECT LEVEL

PAD STRUCTURE FOR A SEMICONDUCTOR DEVICE CAPABLE OF PREVENTING A METAL LAYER FROM BEING PEELED OR CRACKED

PURPOSE: A pad structure for a semiconductor device is provided to form a bonding pad on a metal pad of the top metal layer, thereby providing electrical connection with a mutual connection structure. CONSTITUTION: An ILD(Inter-Layer Dielectric) layer is formed on a substrate(202) including a micro electronic device. A plurality of contacts(206) is formed on the ILD layer. A mutual connection structure includes a plurality of metal layers(210a~210i) and a plurality of IMD(inter-metal dielectric) layers(220) for separating the metal layer. A plurality of dummy metal vias is formed in at least one IMB layer located between at least two metal layers. A pad structure is formed on the dummy metal vias. COPYRIGHT KIPO 2011 ...

METHOD FOR FORMING INTERCONNECT STRUCTURE

DIRECTLY SAWING WAFERS COVERED WITH LIQUID MOLDING COMPOUND

Semiconductor device and process for manufacturing the same

A semiconductor device has a pad structure with a ring-shaped stress buffer layer between a metal pad and an under-bump metallization (UBM) layer. The stress buffer layer is formed of a dielectric layer with a dielectric constant less than 3.5, a polymer layer, or an aluminum layer. The stress buffer layer is a circular ring, a square ring, an octagonal ring, or any other geometric ring.

Copper interconnection with conductive polymer layer and method of forming the same

A conductive polymer between two metallic layers, acts as a glue layer, a barrier layer or an activation seed layer. The conductive polymer layer is employed to encapsulate a copper interconnection structure to prevent copper diffusion into any overlying layers and improve adhesive characteristics between the copper and any overlying layers.

Method for forming the package structure

A method for forming the package structure is provided. The method includes forming a die structure over a first surface of a first substrate, and forming a plurality of electrical connectors below a second surface of the first substrate. The method also includes forming a first protruding structure below the second surface of the first substrate, and the electrical connectors are surrounded by the first protruding structure. The method further includes forming a second protruding structure over a second substrate, and bonding the first substrate to the second substrate. The electrical connectors are surrounded by the second protruding structure, and the first protruding structure does not overlap with the second protruding structure.

SEMICONDUCTOR DEVICE PACKAGE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICES HAVING CRACK-INHIBITING STRUCTURES

Semiconductor devices having metallization structures including crack-inhibiting structures, and associated systems and methods, are disclosed herein. In one embodiment, a semiconductor device includes a metallization structure formed over a semiconductor substrate. The metallization structure can include a bond pad electrically coupled to the semiconductor substrate via one or more layers of conductive material, and an insulating material—such as a low-κ dielectric material—at least partially around the conductive material. The metallization structure can further include a crack-inhibiting structure positioned beneath the bond pad between the bond pad and the semiconductor substrate. The crack-inhibiting structure can include (a) a metal lattice extending laterally between the bond pad and the semiconductor substrate and (b) barrier members extending vertically between the metal lattice and the bond pad.

Interconnect structures for preventing solder bridging, and associated systems and methods

Semiconductor dies having interconnect structures formed thereon, and associated systems and methods, are disclosed herein. In one embodiment, an interconnect structure includes a conductive material electrically coupled to an electrically conductive contact of a semiconductor die. The conductive material includes a first portion vertically aligned with the conductive contact, and a second portion that extends laterally away from the conductive contact. A solder material is disposed on the second portion of the interconnect structure such that the solder material is at least partially laterally offset from the conductive contact of the semiconductor die. In some embodiments, an interconnect structure can further include a containment layer that prevents wicking or other undesirable movement of the solder material during a reflow process.

Semiconductor device with an improved bonding pad structure and method of bonding bonding wires to bonding pads

The present invention provides a bonding structure between a bonding pad and a bonding portion of a bonding wire made of an Au-base material, wherein said bonding pad further comprises: a base layer; at least a barrier layer overlying said base layer; and a bonding layer overlying said at least barrier layer, said bonding layer including an Al-base material, and wherein said bonding portion of said bonding wire is buried in said bonding layer, and an Au—Al alloy layer extends on an interface between said bonding portion and said bonding layer, and a bottom of said Au—Al alloy layer is in contact with or adjacent to an upper surface of said barrier layer.

Method of making a pillar structure having a non-metal sidewall protection structure and integrated circuit including the same

An integrated circuit device includes a semiconductor substrate; and a pad region over the semiconductor substrate. The integrated circuit device further includes an under-bump-metallurgy (UBM) layer over the pad region. The integrated circuit device further includes a conductive pillar on the UBM layer, wherein the conductive pillar has a sidewall surface and a top surface. The integrated circuit device further includes a protection structure over the sidewall surface of the conductive pillar, wherein sidewalls of the UBM layer are substantially free of the protection structure, and the protection structure is a non-metal material.

Thin metal barrier for electrical interconnections

An interconnect structure and barrier layer for electrical interconnections is described incorporating a layer of TaN in the hexagonal phase between a first material such as Cu and a second material such as Al, W, and PbSn. A multilayer of TaN in the hexagonal phase and Ta in the alpha phase is also described as a barrier layer. The invention overcomes the problem of Cu diffusion into materials desired to be isolated during temperature anneal at 500° C.

Packaging structure and fabrication method thereof

A packaging structure and a method for fabricating the packaging structure are provided. The packaging structure includes a base substrate including a solder pad body region and a trench region adjacent to and around the solder pad body region. The packaging structure also includes a passivation layer on a surface of the base substrate and exposing the solder pad body region and the trench region. In addition, the packaging structure includes a main body solder pad on the solder pad body region of the base substrate, and one or more trenches on the trench region of the base substrate and between the passivation layer and the main body solder pad. Further, the packaging structure includes a bonding conductive wire having one end connected to the main body solder pad.

Internally reinforced bond pads

Disclosed is a reinforced bond pad structure having nonplanar dielectric structures and a metallic bond layer conformally formed over the nonplanar dielectric structures. The nonplanar dielectric structures are substantially reproduced in the metallic bond layer so as to form nonplanar metallic structures. Surrounding each of the nonplanar metallic structures is a ring of dielectric material which provides a hard stop during probing of the bond pad so as to limit the amount of bond pad that can be removed during probing.

Semiconductor device comprising a chip substrate, a mold, and a buffer layer

A semiconductor device and a method of manufacturing the semiconductor device are disclosed. The semiconductor device includes a chip substrate, a mold, and a buffer layer. The mold is disposed over the chip substrate. The buffer layer is externally embedded between the chip substrate and the mold. The buffer layer has an elastic modulus or a coefficient of thermal expansion less than that of the mold. The method includes disposing a buffer layer at least covering scribe lines of a substrate, forming a mold over the substrate and covering the buffer layer, and cutting along the scribe lines and through the mold, the buffer layer and the substrate.

Semiconductor integrated circuit device

In semiconductor integrated circuit devices for vehicle use, an aluminum pad on a semiconductor chip and an external device are coupled to each other by wire bonding using a gold wire for the convenience of mounting. Such a semiconductor integrated circuit device, however, causes a connection failure due to the interaction between aluminum and gold in use for a long time at a relatively high temperature (about 150 degrees C.). A semiconductor integrated circuit device can include a semiconductor chip as a part of the device, an electrolytic gold plated surface film (gold-based metal plated film) provided over an aluminum-based bonding pad on a semiconductor chip via a barrier metal film, and a gold bonding wire (gold-based bonding wire) for interconnection between the plated surface film and an external lead provided over a wiring board (wiring substrate).

Thin film metal barrier for electrical interconnections

An interconnect structure and barrier layer for electrical interconnections is described incorporating a layer of TaN in the hexagonal phase between a first material such as Cu and a second material such as Al, W, and PbSn. A multilayer of TaN in the hexagonal phase and Ta in the alpha phase is also described as a barrier layer. The invention overcomes the problem of Cu diffusion into materials desired to be isolated during temperature anneal at 500° C.

Bond Structures and the Methods of Forming the Same

A method includes forming a first conductive feature and a second conductive feature, forming a metal pad over and electrically connected to the first conductive feature, and forming a passivation layer covering edge portions of the metal pad, with a center portion of a top surface of the metal pad exposed through an opening in the metal pad. A first dielectric layer is formed to cover the metal pad and the passivation layer. A bond pad is formed over the first dielectric layer, and the bond pad is electrically coupled to the second conductive feature. A second dielectric layer is deposited to encircle the bond pad. A planarization is performed to level a top surface of the second dielectric layer with the bond pad. At a time after the planarization is performed, an entirety of the top surface of the metal pad is in contact with dielectric materials. 1. A device comprising:a first metal feature and a second metal feature adjacent to each other;a metal pad over and contacting the first metal feature;a passivation layer covering edge portions of the metal pad, with a center portion of a top surface of the metal pad exposed through an opening in the passivation layer;a first dielectric layer covering the top surface of the metal pad and the passivation layer;a via penetrating through the first dielectric layer and the passivation layer to contact the second metal feature;a first bond pad and a second bond pad, with the second bond pad being over and contacting the via; anda second dielectric layer encircling the first bond pad and the second bond pad.2. The device of claim 1 , wherein the first bond pad is electrically floating claim 1 , and wherein the first bond pad overlaps the metal pad.3. The device of further comprising a dielectric barrier layer on sidewalls of the first bond pad and the second bond pad.4. The device of claim 1 , wherein an entirety of the top surface of the metal pad and all sidewalls of the metal pad are in contact with dielectric materials.5. ...

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

A semiconductor structure is provided. The semiconductor structure includes a first semiconductor device. The first semiconductor device includes a first bonding layer formed below a first substrate, a first bonding via formed through the first oxide layer and the first bonding layer, a first dummy pad formed in the first bonding layer. The semiconductor structure includes a second semiconductor device. The second semiconductor device includes a second bonding layer formed over a second substrate, a second bonding via formed through the second bonding layer, and a second dummy pad formed in the second bonding layer. The semiconductor structure includes a bonding structure between the first substrate and the second substrate, wherein the bonding structure includes the first bonding via bonded to the second bonding via and the first dummy pad bonded to the second dummy pad.

Bundle of long thin carbon structures, manufacturing method thereof, and electronic device

In the bundle of long thin carbon structures of the present invention, end parts of the bundle are interconnected in a carbon network. The interconnected end parts form a flat surface. By this, an electrical connection structure with low resistance and/or a thermal connection structure with high thermal conductivity are obtained. The bundle of long thin carbon structures can be used suitably as a via, heat removal bump or other electronic element.

Electronic device including a conductive stud over a bonding pad region and a process for forming the electronic device

An electronic device can include an interconnect level ( 16 ) including a bonding pad region ( 110 ). An insulating layer ( 18 ) can overlie the interconnect level ( 16 ) and include an opening ( 112, 24 ) over the bonding pad region ( 110 ). In one embodiment, a conductive stud ( 34 ) can lie within the opening ( 112, 24 ) and can be substantially encapsulated. In another embodiment, the electronic device can include a barrier layer ( 22 ) lying along a side and a bottom of the opening ( 112, 24 ) and a conductive stud ( 34 ) lying within the opening ( 112, 24 ). The conductive stud ( 34 ) can substantially fill the opening ( 112, 24 ). A majority of the conductive stud ( 34 ) can lie within the opening ( 112, 24 ). In still another embodiment, a process for forming an electronic device can include forming a conductive stud ( 34 ) within the opening ( 112, 24 ) wherein from a top view, the conductive stud ( 34 ) lies substantially completely within the opening ( 112, 24 ). The process ...

Semiconductor chip having via electrodes and stacked semiconductor chips interconnected by the via electrodes

A semiconductor device includes a semiconductor substrate and a via electrode. The via electrode has a first portion on the substrate and extends towards the substrate and has a plurality of spikes that extends from the first portion into the substrate, each of the spikes being spaced apart form one another.

Micropad formation for a semiconductor

A method forms a micropad to an external contact of a first semiconductor device. A stud of copper is formed over the external contact. The stud extends above a surface of the first semiconductor device. The stud of copper is immersed in a solution of tin. The tin replaces at least 95 percent of the copper of the stud and preferably more than 99 percent. The result is a tin micropad that has less than 5 percent copper by weight. Since the micropad is substantially pure tin, intermetallic bonds will not form during the time while the micropads of the first semiconductor device are not bonded. Smaller micropad dimensions result since intermetallic bonds do not form. When the first semiconductor device is bonded to an overlying second semiconductor device, the bond dimensions do not significantly increase the height of stacked chips.

BONDING OVER INTEGRATED CIRCUITS

An architecture and method of fabrication for an integrated circuit having a bond pad; at lest one portion of said integrated circuit disposed under said contact pad and electrically connected to said pad through a via; a combination of a bondable metal layer, a stress-absorbing metal layer, and a mechanically strengthened, electrically insulating layer; and said combination of layers separating said contact pad and said portion of said integrated circuit, and having sufficient thickness to protect said circuit from bonding impact.

Directly Sawing Wafers Covered with Liquid Molding Compound

A method includes forming a passivation layer over a metal pad, wherein the metal pad is further overlying a semiconductor substrate of a wafer. A Post-Passivation Interconnect (PPI) is formed to electrically couple to the metal pad, wherein a portion of the PPI is overlying the passivation layer. A metal bump is formed over and electrically coupled to the PPI. The method further includes applying a molding compound over the metal bump and the PPI, applying a release film over the molding compound, pressing the release film against the molding compound, and curing the molding compound when the release film is pressed against the molding compound. The release film is then removed from the molding compound. The wafer is sawed into dies using a blade, with the blade cutting through the molding compound.

Electronic device, electronic module and methods for fabricating the same

An electronic device, an electronic module comprising the electronic device and methods for fabricating the same are disclosed. In one example, the electronic device includes a semiconductor substrate and a metal stack disposed on the semiconductor substrate, wherein the metal stack comprises a first layer, wherein the first layer comprises NiSi.

Multi-metal contact structure

A first conductive material having a first hardness is disposed within a recess or opening of a microelectronic component, in a first preselected pattern, and forms a first portion of an interconnect structure. A second conductive material having a second hardness different from the first hardness is disposed within the recess or opening in a second preselected pattern and forms a second portion of the interconnect structure.

METHOD FOR FORMING C4 CONNECTIONS ON INTEGRATED CIRCUIT CHIPS AND THE RESULTING DEVICES

Process for realising a connecting structure

The present invention relates to a process for realizing a connecting structure (2200) in a semiconductor substrate (1000), and the semiconductor substrate realized accordingly. The process of the present invention, the semiconductor substrate (1000) having at least a first surface, and being foreseen for a 3D integration with a second substrate (1700) along the first surface, wherein the 3D integration is subject to a lateral misalignment in at least one dimension having a misalignment value, can include the step of growing a diffusion barrier structure (2211) for preventing diffusion of elements out of a conductive layer into the rest of the semiconductor substrate, is characterized in that a first end surface, being the most outward surface of the diffusion barrier structure (2211) being substantially parallel to the first surface, along a direction perpendicular to the first surface and going from the substrate toward the first surface, of the diffusion barrier structure (2211) can ...

Halbleitervorrichtung mit Nachpassivierung-Zwischenverbindungsstruktur und Verfahren zu ihrer Bildung

Halbleitervorrichtung mit Nachpassivierungs-Zwischenverbindungsstruktur, umfassend: – eine auf einem Halbleitersubstrat (10) ausgebildete Schaltungsanordnung (12) mit elektrische Vorrichtungen überlagernden dielektrischen Schichten und dazwischenliegend ausgebildeten Metallschichten; – eine dielektrische Zwischenschicht (14) aufgetragen durch plasmaunterstützte chemische Gasphasenabscheidung mit mehreren dielektrischen Schichten und darin ausgebildeten Kontakten zum Kontaktieren der Schaltungsanordnung (12); – mehrere dielektrische Zwischenmetallschichten (16) aufgetragen durch chemische Gasphasenabscheidung mit hochdichtem Plasma mit zugeordneten Metallisierungsschichten, die der dielektrischen Zwischenschicht (14) überlagert sind, wobei die Metallisierungsschichten mittels Ätzprozess unter Verwendung von Ätzstoppschichten aufgetragen durch plasmaunterstützte chemische Gasphasenabscheidung Metallleitungen (18) und Durchkontakte (19) zum Zusammenschalten der Schaltungsanordnung (12) schaffen ...

Halbleitervorrichtung mit einer spannungskompensierten Chipelelektrode

Eine Halbleitervorrichtung weist einen Halbleiterchip mit einer ersten Hauptoberfläche und einer zweiten Hauptoberfläche auf. Eine Chipelektrode ist auf der ersten Hauptoberfläche angeordnet. Die Chipelektrode weist eine erste Metallschicht, die ein erstes Metallmaterial, das aus der Gruppe bestehend aus W, Cr, Ta, Ti und Metalllegierungen von W, Cr, Ta, Ti ausgewählt ist, umfasst, auf. Die Chipelektrode weist ferner eine zweite Metallschicht, die ein zweites Metallmaterial, das aus der Gruppe bestehend aus Cu und einer Cu-Legierung ausgewählt ist, umfasst, auf, wobei die erste Metallschicht zwischen dem Halbleiterchip und der zweiten Metallschicht angeordnet ist.

Bond pad structure for copper metallization having increased realiability and method for fabricating same

SEMICONDUCTOR DEVICE HAVING A BOND PAD AND METHOD FOR ITS FABRICATION

TANTALUM SEMICONDUCTOR CONTACTS AND METHOD FOR FABRICATING SAME

Contour structures to highlight inspection regions

Interconnection potential barrier structure and method

Integrated circuit element and packaging component

The invention provides an integrated circuit element and a packaging component. The integrated circuit element comprises a semiconductor substrate, a conductive column which is disposed on the semiconductor substrate and has a side wall surface and an upper surface, a boss lower metal layer which is disposed between the semiconductor substrate and the conductive column and has a surface area which is adjacently connected to the side wall surface of the conductive column and extends from the side wall surface, and a protection structure which is disposed on the side wall surface of a copper column and on the surface area of the boss lower metal layer. The protection structure is made of metal materials and the conductive column is composed by copper layers. The side wall protection structure covers at least a part of the side wall surface of the boss structure, and the protection structures disposed on the copper column side wall and on the surface area of the boss lower metal layer are ...

Interconnection method for integration of high-2.5D density, high 3D-density, high-density and high-density networks

Method for eliminating aluminum terminal pad material in semiconductor devices

A method for far back end of line (FBEOL) semiconductor device formation includes forming a terminal copper pad in an upper level of a semiconductor wafer, forming an insulating stack over the terminal copper pad, and patterning and opening a terminal via within a portion of the insulating stack so as to leave a bottom cap layer of the insulating stack protecting the terminal copper pad. An organic passivation layer is formed and patterned over the top of the insulating stack, and the bottom cap layer over the terminal copper pad is removed. A ball limiting metallurgy (BLM) stack is depositedover the organic passivation layer and terminal copper pad, and a solder ball connection is formed on a patterned portion of the BLM stack.

METHOD FOR PRODUCING A STRUCTURE BY JOINING AT LEAST TWO MEMBERS TOGETHER BY DIRECT BONDING

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

A COMMON BALL-LIMITING METALLURGY FOR I/O SITES

Light emitting device

A light emitting device includes a carrier, at least one epitaxial structure, at least one buffer pad and at least one bonding pad. The epitaxial structure is disposed on the carrier. The buffer pad is disposed between the carrier and the epitaxial structure, wherein the epitaxial structure is temporarily bonded to the carrier by the buffer pad. The bonding pad is disposed on the epitaxial structure, wherein the epitaxial structure is electrically connected to a receiving substrate by the bonding pad.

Pad structure for semiconductor devices

A semiconductor device is provided which includes a semiconductor substrate having a plurality of microelectronic elements formed therein; an interconnect structure formed over the substrate, the interconnect structure including metal layers isolated from one another by an inter-metal dielectric, the metal layers including a topmost metal layer; dummy metal vias formed between at least two metal layers and disposed within a region of the interconnect structure; and a bonding pad formed over the topmost metal layer such that the bonding pad is aligned with the region of the interconnect structure.

Three-dimensional integrated circuit structures

Three-dimensional integrated circuit structures are disclosed. A three-dimensional integrated circuit structure includes a first die, a second die and a device-free die. The first die includes a first device. The second die includes a second device and is bonded to the first die. The device-free die is located aside the second die and is bonded to the first die. The device-free die includes a conductive feature electrically connected to the first die and the second die.

Semiconductor device

Integrated circuit device and method of forming the same

INTERCONNECT STRUCTURES WITH BOND-PADS AND METHODS OF FORMING BUMP SITES ON BOND-PADS

Microelectronic workpieces that have bump sites over bond-pads and methods of fabricating such bump sites. One embodiment of such a workpiece, for example, includes a substrate having a plurality of microelectronic dies comprising integrated circuitry and bond-pads, such as copper bond-pads, electrically coupled to the integrated circuitry. The workpiece further includes (a) a dielectric structure having a plurality of openings with sidewalls projecting from corresponding bond-pads, and (b) a plurality of caps over corresponding bond-pads. The individual caps can include a discrete portion of a barrier layer attached to the bond-pads and the sidewalls of the openings, and a discrete portion of a cap layer on the barrier layer. The caps are electrically isolated from each other and self-aligned with corresponding bond-pads without forming a mask layer over the cap layer.

STRUCTURE AND METHOD FOR CONTACT PADS HAVING AN OVERCOAT-PROTECTED BONDABLE METAL PLUG OVER COPPER-METALLIZED INTEGRATED CIRCUITS

A metal structure for a contact pad of an integrated circuit (IC), which has copper interconnecting metallization (311). A portion (301) of this metallization is exposed to provide a contact pad to the IC. A conductive barrier layer (330) is positioned on the exposed portion of the copper metallization. A plug (350) of bondable metal, preferably aluminum between about 0.4 and 1.4 µm thick, is positioned on the barrier layer. A protective overcoat layer (320) surrounds the plug and has a thickness (320b) so that the exposed surface (322) of the plug lies at or below the exposed surface (320a) of the overcoat layer. Optionally, a portion (321) of the overcoat layer between about 0.1 and 0.3µm wide may overlap the perimeter of the plug.

GRAPHENE-BASED METAL DIFFUSION BARRIER

Contacts for semiconductor devices are formed where a barrier layer comprising graphene is situated between a first layer comprising a conductor, and a second layer comprising a second conductor or a semiconductor. For example, a metal layer can be formed on a graphene layer residing on a semiconductor. The barrier layer can be directly formed on some second layers, for example, graphene can be transferred from an organic polymer/graphene bilayer structure and the organic polymer removed and replaced with a metal or other conductor that comprises the first layer of the contact. The bilayer can be formed by CVD deposition on a metallic second layer, or the graphene can be formed on a template layer, for example, a metal layer, and bound by a binding layer comprising an organic polymer to form an organic polymer /graphene/metal trilayer structure. The template layer can be removed to yield the bilayer structure. Contacts with the graphene barrier layer display enhanced reliability as the ...

SEMICONDUCTOR PACKAGE

A semiconductor package including a first semiconductor chip having a first thickness, a second semiconductor chip on the first semiconductor chip and having a second thickness, the second thickness being smaller than the first thickness, a third semiconductor chip on the second semiconductor chip and having a third thickness, the third thickness being smaller than the second thickness, a fourth semiconductor chip on the third semiconductor chip and having a fourth thickness, the fourth thickness being greater than the third thickness, and a fifth semiconductor chip disposed on the fourth semiconductor chip and having a fifth thickness, the fifth thickness being greater than the fourth thickness may be provided.

Semiconductor device

Disclosed is a semiconductor device including a conductive pattern on a substrate, a passivation layer on the substrate and including an opening that partially exposes the conductive pattern, and a pad structure in the opening of the passivation layer and connected to the conductive pattern. The pad structure includes a first metal layer that fills the opening of the passivation layer and has a width greater than that of the opening, and a second metal layer on the first metal layer. The first metal layer has a first thickness at an outer wall of the first metal layer, a second thickness on a top surface of the passivation layer, and a third thickness on a top surface of the conductive pattern. The second thickness is greater than the first thickness, and the third thickness is greater than the second thickness.

SEMICONDUCTOR DEVICES INCLUDING A THROUGH VIA STRUCTURE AND METHODS OF FORMING THE SAME

Semiconductor devices including a through via structure and methods of forming the same are provided. The semiconductor devices may include a semiconductor substrate including a first surface and a second surface opposite the first surface, a front insulating layer on the first surface of the semiconductor substrate, a back insulating layer on the second surface of the semiconductor substrate, a through via structure extending through the back insulating layer, the semiconductor substrate, and the front insulating layer, a via insulating layer on a side surface of the through via structure, and a contact structure extending through the front insulating layer. The through via structure may include a first region and a second region disposed on the first region. The second region may include a first doping element, and the first region may be substantially free of the first doping element.

BUNDLE OF LONG THIN CARBON STRUCTURES, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE

In the bundle of long thin carbon structures of the present invention, end parts of the bundle are interconnected in a carbon network. The interconnected end parts form a flat surface. By this, an electrical connection structure with low resistance and/or a thermal connection structure with high thermal conductivity are obtained. The bundle of long thin carbon structures can be used suitably as a via, heat removal bump or other electronic element.

Semiconductor device with a via hole having a diameter at the surface larger than a width of a pad electrode

The invention is directed to a semiconductor device having a penetrating electrode and a manufacturing method thereof in which reliability and a yield of the semiconductor device are enhanced. A semiconductor substrate is etched to form a via hole from a back surface of the semiconductor substrate to a pad electrode. This etching is performed under an etching condition such that an opening diameter of the via hole at its bottom is larger than a width of the pad electrode. Next, a second insulation film is formed on the back surface of the semiconductor substrate including in the via hole 16 , exposing the pad electrode at the bottom of the via hole. Next, a penetrating electrode and a wiring layer are formed, being electrically connected with the pad electrode exposed at the bottom of the via hole 16 . Furthermore, a protection layer and a conductive terminal are formed. Finally, the semiconductor substrate is cut and separated in semiconductor dies by dicing.

Micromachined bonding surfaces and method of forming the same

A method of encapsulating a lead bonding pad region of an integrated circuit (such as a sensor used in an implantable medical device) is disclosed. The excapsulant (such as Teflon™-TFE) is mechanically gripped on the surface of the circuit by anchor interlock portions which are held in undercut grooves, micromachined, in a predefined pattern, in the circuit substrate. The encapsulant is held down by the portions in the grooves, forms a tight mechanical seal with the substrate surface and with the insulation around an attached lead, and blocks intrusion of contaminants along the surfaces between these materials or through the encapsulant.

Method of forming an integrated crackstop

A method including forming a first dielectric layer above a conductive pad and above a metallic structure, the conductive pad and the metallic structure are each located within an interconnect level above a substrate, forming a first opening and a second opening in the first dielectric layer, the first opening is aligned with and exposes the conductive pad and the second opening is aligned with and exposes the metallic structure, and forming a metallic liner on the conductive pad, on the metallic structure, and above the first dielectric layer. The method may further include forming a second dielectric layer above the metallic liner, and forming a third dielectric layer above the second dielectric layer, the third dielectric layer is thicker than either the first dielectric layer or the second dielectric layer.

Redistribution Layers And Methods Of Fabricating The Same In Semiconductor Devices

A semiconductor structure includes a first passivation layer disposed over a metal line, a copper-containing RDL disposed over the first passivation layer, where the copper-containing RDL is electrically coupled to the metal line and where a portion of the copper-containing RDL in contact with a top surface of the first passivation layer forms an acute angle, and a second passivation layer disposed over the copper-containing RDL, where an interface between the second passivation layer and a top surface of the copper-containing RDL is curved. The semiconductor structure may further include a polymeric layer disposed over the second passivation layer, where a portion of the polymeric layer extends to contact the copper-containing RDL, a bump electrically coupled to the copper-containing RDL, and a solder layer disposed over the bump.

Semiconductor device

A semiconductor device that includes a pad over a multilevel interconnect formed by stacking an interconnect layer and an interlayer insulating film, the semiconductor device including a protective member that is formed in a continuous manner under outer circumference of the pad and has moisture resistance, the protective member surrounding the interlayer insulating film under the pad.

Bond structures and the methods of forming the same

A method includes forming a first conductive feature and a second conductive feature, forming a metal pad over and electrically connected to the first conductive feature, and forming a passivation layer covering edge portions of the metal pad, with a center portion of a top surface of the metal pad exposed through an opening in the metal pad. A first dielectric layer is formed to cover the metal pad and the passivation layer. A bond pad is formed over the first dielectric layer, and the bond pad is electrically coupled to the second conductive feature. A second dielectric layer is deposited to encircle the bond pad. A planarization is performed to level a top surface of the second dielectric layer with the bond pad. At a time after the planarization is performed, an entirety of the top surface of the metal pad is in contact with dielectric materials.

Single mask package apparatus and method

Disclosed herein is a single mask package apparatus on a device comprising a first substrate having a land disposed on a first surface, a stud disposed on the land and a protective layer disposed over the first surface of the first substrate and around the stud. The protective layer may optionally have a thickness of at least 3 m. A PPI may be disposed over the protective layer and in electrical contact with the stud, with a first portion of the PPI extending laterally from the stud. An interconnect may be disposed on and in electrical contact with the first portion of the PPI, and a second substrate mounted on the interconnect. A molding compound may be disposed over the PPI and around the interconnect. The stud may be a substantially solid material having a cylindrical cross section and may optionally be wirebonded to the land.

Integrated circuit and method for fabricating the same

A method for fabricating an integrated circuit (IC) chip includes forming a metal trace having a thickness of between 5m and 27 m over a semiconductor substrate, and forming a passivation layer on the metal trace, wherein the passivation layer includes a layer of silicon nitride on the metal trace and a layer of silicon oxide on the layer of silicon nitride, or includes a layer of silicon oxynitride on the metal trace and a layer of silicon oxide on the layer of silicon oxynitride.

Microfeature workpieces having interconnects and conductive backplanes, and associated systems and methods

Microfeature workpieces having interconnects and conductive backplanes and associated systems and methods are disclosed herein. One such device includes a semiconductor substrate having integrated circuitry and terminals electrically coupled to the integrated circuitry. The device also includes electrically conductive interconnects extending through at least a portion of the semiconductor substrate and electrically coupled to corresponding terminals. The device further includes a conductive backplane assembly having a conductive layer at a back side of the semiconductor substrate. One or more of the interconnects are electrically coupled to the conductive layer at the back side of the semiconductor substrate.

Method of improving copper interconnect of semiconductor devices for bonding

An improved wire bond with the bond pads of semiconductor devices and the lead fingers of lead frames or an improved conductor lead of a TAB tape bond with the bond pad of a semiconductor device. More specifically, an improved wire bond wherein the bond pad on a surface of the semiconductor device comprises a layer of copper and at least one layer of metal and/or at least a barrier layer of material between the copper layer and one layer of metal on the copper layer to form a bond pad.

Copper pad structure

A structure (and method) for a metallurgical structure includes a passivation layer, a via through the passivation layer extending to a metal line within the metallurgical structure, a barrier layer lining the via, a metal plug in the via above the barrier layer, the metal plug and the metal line comprising a same material, and a solder bump formed on the metal plug.

Semiconductor device with fuse to be blown with energy beam and method of manufacturing the semiconductor device

A semiconductor device has a fuse to be blown with an energy beam. The semiconductor device has copper wiring levels formed on a semiconductor substrate on which semiconductor elements are formed, an uppermost wiring level formed on said copper wiring levels and including a refractory metal film connected to a top one of the copper wiring levels, the fuse formed from a part of the uppermost wiring level, and a surface protective film formed on the uppermost wiring level.

Integrated circuit packages

Some embodiments include methods of assembling integrated circuit packages in which at least two different conductive layers are formed over a bond pad region of a semiconductor die, and in which a conductive projection associated with an interposer is bonded through a gold ball to an outermost of the at least two conductive layers. The conductive layers may comprise one or more of silver, gold, copper, chromium, nickel, palladium, platinum, tantalum, titanium, vanadium and tungsten. In some embodiments, the bond pad region may comprise aluminum, an inner of the conductive layers may comprise nickel, an outer of the conductive layers may comprise gold, the conductive projection associated with the interposer may comprise gold; and the thermosonic bonding may comprise gold-to-gold bonding of the interposer projection to a gold ball, and gold-to-gold bonding of the outer conductive layer to the gold ball. Some embodiments include integrated circuit packages.

UBM etching methods for eliminating undercut

A method includes forming an under-bump metallurgy (UBM) layer overlying a substrate, and forming a mask overlying the UBM layer. The mask covers a first portion of the UBM layer, and a second portion of the UBM layer is exposed through an opening in the mask. A metal bump is formed in the opening and on the second portion of the UBM layer. The mask is then removed. A laser removal is performed to remove a part of the first portion of the UBM layer and to form an UBM.

Semiconductor device, fabrication method for a semiconductor device and electronic apparatus

Disclosed herein is a semiconductor device, including: a first substrate including a first electrode, and a first insulating film configured from a diffusion preventing material for the first electrode and covering a periphery of the first electrode, the first electrode and the first insulating film cooperating with each other to configure a bonding face; and a second substrate bonded to and provided on the first substrate and including a second electrode joined to the first electrode, and a second insulating film configured from a diffusion preventing material for the second electrode and covering a periphery of the second electrode, the second electrode and the second insulating film cooperating with each other to configure a bonding face to the first substrate.

Integrated circuit package system with post-passivation interconnection and integration

An integrated circuit package system including: providing an integrated circuit die, forming a first layer over the integrated circuit die, forming a bridge on and in the first layer, forming a second layer on the first layer, and forming bump pads on and in the second layer, the bump pads connected to ends of the bridge.

Bump structure design for stress reduction

Low stress bumps can be used to reduce stress and strain on bumps bonded to a substrate with different coefficients of thermal expansion (CTEs) from the die. The low stress bumps include multiple polymer layers. More than one type of bump is coupled to a die, with low stress bumps placed on areas subjected to high stress.

Method for forming a bond pad interface

A composite bond pad that is resistant to external forces that may be applied during probing or packaging operations is presented. The composite bond pad includes a non-self-passivating conductive bond pad (134) that is formed over a semiconductor substrate (100). A dielectric layer (136) is then formed over the conductive bond pad (134). Portions of the dielectric layer (136) are removed such that the dielectric layer (136) becomes perforated and a portion of the conductive bond pad (134) is exposed. Remaining portions of the dielectric layer (136) form support structures (138) that overlie that bond pad. A self-passivating conductive capping layer (204) is then formed overlying the bond pad structure, where the perforations in the dielectric layer (136) allow for electrical contact between the capping layer (204) and the exposed portions of the underlying bond pad (134). The support structures (138) provide a mechanical barrier that protects the interface between the capping layer (204 ...

Wire bonding to copper

The specification describes techniques for wire bonding gold wires to copper metallization in semiconductor integrated circuits. A barrier layer is formed on the copper, and an aluminum bonding pad is formed on the barrier layer. Gold wire is then thermocompression bonded to the aluminum pad.

Verfahren für die Ausbildung einer Verbindungsstruktur

Ein Verfahren für die Ausbildung von Verbindungsstrukturen weist das Ausbilden einer Metallleitung, die aus einem ersten leitfähigen Material besteht, über einem Substrat auf, sowie das Abscheiden einer dielektrischen Schicht über der Metallleitung, das Strukturieren der dielektrischen Schicht, um eine Öffnung auszubilden, das Abscheiden einer ersten Sperrschicht auf einer Unterseite sowie auf Seitenwänden der Öffnung unter Verwendung eines atomaren Schichtabscheidungsverfahrens, das Abscheiden einer zweiten Sperrschicht über der ersten Sperrschicht, wobei die erste Sperrschicht mit Erde verbunden ist, sowie das Ausbilden eines Pads, das aus einem zweiten leitfähigen Material besteht, in der Öffnung.

Halbleitervorrichtung

Eine Emitterelektrode weist eine erste Elektrodenschicht, eine zweite Elektrodenschicht und eine dritte Elektrodenschicht auf. Die erste bis dritte Elektrodenschicht sind in dieser Reihenfolge auf eine Emitterschicht gelegt. Eine Lötmittelschicht ist weiter auf die dritte Elektrodenschicht gelegt. Die erste Elektrodenschicht bedeckt die Emitterschicht und eine Gate-Oxidschicht in einer vorderen Oberfläche eines Halbleiter-Chips. Ein erstes elektrisch leitendes Material, das die erste Elektrodenschicht bildet, weist AlSi als seine Hauptkomponente auf. Ein zweites elektrisch leitendes Material, das die zweite Elektrodenschicht bildet, weist einen linearen Ausdehnungskoeffizienten auf, der sich von dem des ersten elektrisch leitenden Materials unterscheidet, und weist eine geringere mechanische Festigkeit auf als das erste elektrisch leitende Material. Ein drittes elektrisch leitendes Material, das die dritte Elektrodenschicht bildet, weist einen linearen Ausdehnungskoeffizienten auf, der ...

BONDSTRUKTUREN UND VERFAHREN ZU IHRER HERSTELLUNG

Ein Verfahren weist die folgenden Schritte auf: Ausbilden einer ersten leitenden Struktur und einer zweiten leitenden Struktur; Ausbilden einer Metall-Kontaktstelle über und in elektrischer Verbindung mit der ersten leitenden Struktur; und Ausbilden einer Passivierungsschicht, die Randteile der Metall-Kontaktstelle bedeckt, wobei ein mittlerer Teil einer Oberseite der Metall-Kontaktstelle durch eine Öffnung in der Metall-Kontaktstelle freigelegt wird. Eine erste dielektrische Schicht wird so gebildet, dass sie die Metall-Kontaktstelle und die Passivierungsschicht bedeckt. Über der ersten dielektrischen Schicht wird eine Bondinsel gebildet, und die Bondinsel wird mit der zweiten leitenden Struktur elektrisch verbunden. Eine zweite dielektrische Schicht wird so abgeschieden, dass sie die Bondinsel umschließt. Eine Planarisierung wird durchgeführt, um eine Oberseite der zweiten dielektrischen Schicht auf gleiche Höhe mit der Bondinsel zu bringen. Nach der Durchführung der Planarisierung ist ...

Semiconductor device

The invention relates to a semiconductor device. The top surface of a semiconductor substrate is provided with at least one bonding pad. A passivation layer is located on the top surface of the semiconductor substrate. At least one opening located within the passivation layer exposes the bonding pad. A metal layer is stacked on the bonding pad.

Semiconductor device and method of manufacturing thereof

PLACEMENT METHOD OF GLUING CHIPS AND A RECEIVING SUBSTRATE

Ce procédé comporte : a) la fourniture (44) de plusieurs puces, b) le placement (70) des puces à des emplacements prédéfinis en attirant une couche de transfert de la puce à l'aide d'un plot, la force d'attraction entre la couche de transfert et le plot étant une force choisie dans le groupe composé d'une force magnétique, d'une force électrostatique et d'une force électromagnétique, c) le collage (74) des puces ainsi placées sur des zones de réception respectives d'une face active du substrat récepteur. Lors de l'étape c), le procédé comporte la fourniture de la face active du substrat récepteur dans laquelle chaque zone de réception est lisse et directement bordée par une zone périphérique lisse et au même niveau pour prolonger cette zone de réception dans un même plan ou par une zone périphérique en retrait à l'intérieur du substrat.

Device for allowing electrical interconnection of superconducting materials between cold detection circuit and read-out circuit of bolometer, has stack including layers made of conducting materials and formed perpendicularly with trajectory

Ce dispositif comprend un premier circuit électronique (1) connecté à un second circuit électronique (2) à l'aide d'au moins une interconnexion électrique (8) définissant un trajet des électrons entre lesdits circuits. La ou chaque interconnexion électrique (8) comporte au moins un empilement formant miroir à phonons, ledit empilement comprenant au moins deux couches (3, 4) de matériaux conducteurs différents, chaque empilement étant réalisé perpendiculairement audit trajet d'électrons, et au moins l'une des couches de chaque empilement étant constituée d'un matériau supraconducteur.

PROCESS Of BONDED ASSEMBLY DIRECT BETWEEN TWO ELEMENTS INCLUDING/UNDERSTANDING OF the DIELECTRIC MATERIAL AND COPPER PORTIONS

Procédé d'assemblage par collage direct d'un premier (I) et d'un deuxième (II) élément munis chacun d'une surface comportant des portions de cuivre (6, 106) séparées par un matériau diélectrique (4, 104), ledit procédé comportant : A) une étape de polissage desdites surfaces de sorte que les surfaces à assembler permettent un assemblage par collage, B) une étape de formation d'une deuxième barrière de diffusion (10, 110) sélectivement sur les portions de cuivre (6, 106) des premier et deuxième éléments, la surface de la deuxième barrière de diffusion des premier et deuxième éléments affleurant ladite surface avec un écart inférieur à 5 nanomètres, et C) une étape de mise en contact des deux surfaces de sorte que les portions de cuivre (6, 106) d'une surface recouvrent au moins en partie les portions de cuivre (106, 6) de l'autre surface, et de sorte qu'un collage direct soit obtenu entre les surfaces ...

반도체 장치, 반도체 패키지 및 반도체 패키지의 제조 방법

... 반도체 장치가 개시된다. 반도체 장치는, 기판 상에 형성된 도전 성분(conductive component); 상기 기판 상에 형성되며 개구부를 구비하는 패시베이션층으로서, 상기 개구부가 상기 도전 성분의 적어도 일부분을 노출하는, 상기 패시베이션층; 및 상기 패시베이션층 상에서 상기 개구부를 채우며, 상기 도전 성분과 전기적으로 연결되는 패드 구조물을 포함한다. 상기 패드 구조물은 상기 개구부의 내벽 상에 및 상기 개구부 주위의 상기 패시베이션층 상면 상에 콘포말하게 형성되며, 순서대로 적층된 도전 배리어층, 제1 시드층, 식각 정지층 및 제2 시드층을 포함하는 하부 도전층, 상기 하부 도전층 상에 형성되며, 상기 개구부를 적어도 부분적으로 채우는 제1 패드층, 및 상기 제1 패드층 상에 형성되며, 상기 패시베이션층의 상기 상면 상에 배치되는 상기 하부 도전층의 외주 부분과 접촉하는 제2 패드층을 포함한다.

Routing under bond pad for the replacement of an interconnect layer

Flip chip type semiconductor device and fabrication method thereof

Integrated circuit devices and packaging assembly

A sidewall protection structure is provided for covering at least a portion of a sidewall surface of a bump structure, in which a protection structure on the sidewall of a Cu pillar and a surface region of an under-bump-metallurgy (UBM) layer is formed of at least one non-metal material layers, for example a dielectric material layer, a polymer material layer, or combonations thereof.

Process for realising a connecting structure

The present invention relates to a process for realizing a connecting structure (2200) in a semiconductor substrate (1000), and the semiconductor substrate realized accordingly. The process of the present invention, the semiconductor substrate (1000) having at least a first surface, and being foreseen for a 3D integration with a second substrate (1700) along the first surface, wherein the 3D integration is subject to a lateral misalignment in at least one dimension having a misalignment value, can include the step of growing a diffusion barrier structure (2211) for preventing diffusion of elements out of a conductive layer into the rest of the semiconductor substrate, is characterized in that a first end surface, being the most outward surface of the diffusion barrier structure (2211) being substantially parallel to the first surface, along a direction perpendicular to the first surface and going from the substrate toward the first surface, of the diffusion barrier structure (2211) can ...

METHOD AND STRUCTURE FOR ELIMINATING ALUMINUM TERMINAL PAD MATERIAL IN SEMICONDUCTOR DEVICES

A method for far back end of line (FBEOL) semiconductor device formation includes forming a terminal copper pad (104) in an upper level of a semiconductor wafer (106), forming an insulating stack (114) over the terminal copper pad, and patterning and opening a terminal via (116) within a portion of the insulating stack so as to leave a bottom cap layer of the insulating stack protecting the terminal copper pad. An organic passivation layer (126) is formed and patterned over the top of the insulating stack, and the bottom cap layer (118) over the terminal copper pad is removed. A ball limiting metallurgy (BLM) stack (128) is deposited over the organic passivation layer and terminal copper pad, and a solder ball connection (108) is formed on a patterned portion of the BLM stack.

Aluminum and copper bimetallic bond pad scheme for copper damascene interconnects

Improved processes for fabricating wire bond pads on pure copper damascene are disclosed by this invention. The invention relates to various methods of fabrication used for semiconductor integrated circuit devices, and more specifically to the formation of Al-Cu alloy top pad metal layers are described, which improve adhesion among the wire bond, top Al-Cu and the underlying copper pad metallurgy. This invention describes processes wherein a special Al-Cu bond layer or region is placed on top of the underlying copper pad metal. This Al-Cu bond pad on pure copper (with barrier layer in-between) provides for improved wire bond adhesion to the bond pad and prevents peeling during wire bond adhesion tests.

Process of making pad structure for solder ball limiting metallurgy having reduced edge stress

A two-step masking process is disclosed for forming a ball limiting metallurgy (BLM) pad structure for a solder joint interconnection used between a support substrate and a semiconductor chip. A solder non-wettable layer and a solder wettable layer are deposited on the surface of a support substrate or semiconductor chip which are to be connected. A phased transition layer is deposited between the wettable and non-wettable layers. A thin photo-resist mask defines an area of the solder wettable and phased layers which are etched to form a raised, wettable frustum cone portion. A second mask is deposited on the surface of the support substrate or semiconductor chip, and has an opening concentrically positioned about the frustum cone. Solder is deposited in the opening and covers the frustum cone and the area about its periphery. When solidified, the solder, acting as a mask, is used to sub-etch the underlying solder non-wettable layer thereby defining the BLM pad. When reflowed, the solder ...

Method for manufacture of integrated circuit package system with protected conductive layers for pads

A method for manufacture of an integrated circuit package system includes: providing an integrated circuit die having a contact pad; forming a protection cover over the contact pad; forming a passivation layer having a first opening over the protection cover with the first opening exposing the protection cover; developing a conductive layer over the passivation layer; forming a pad opening in the protection cover for exposing the contact pad having the conductive layer partially removed; and an interconnect directly on the contact pad and only adjacent to the protection cover and the passivation layer.

Redistribution layers for microfeature workpieces, and associated systems and methods

Redistribution layers for microfeature workpieces, and associated systems and methods are disclosed. One method for processing a microfeature workpiece system includes positioning a pre-formed redistribution layer as a unit proximate to and spaced apart from a microfeature workpiece having an operable microfeature device. The method can further include attaching the redistribution layer to the microfeature workpiece and electrically coupling the redistribution layer to the operable microfeature device.

Mechanisms for forming copper pillar bumps using patterned anodes

The mechanisms of preparing bump structures described by using patterned anodes may simplify bump-making process, reduce manufacturing cost, and improve thickness uniformity within die and across the wafer. In addition, the mechanisms described above allow forming bumps with different heights to allow bumps to be integrated with elements on a substrate with different heights. Bumps with different heights expand the application of copper post bumps to enable further chip integration.

Semiconductor device having pad structure with stress buffer layer

A semiconductor device has a pad structure with a ring-shaped stress buffer layer between a metal pad and an under-bump metallization (UBM) layer. The stress buffer layer is formed of a dielectric layer with a dielectric constant less than 3.5, a polymer layer, or an aluminum layer. The stress buffer layer is a circular ring, a square ring, an octagonal ring, or any other geometric ring.

Structures and methods for improving solder bump connections in semiconductor devices

Structures with improved solder bump connections and methods of fabricating such structures are provided herein. The structure includes a trench formed in a dielectric layer which has at least a portion thereof devoid of a fluorine boundary layer. The structure further includes a copper wire in the trench having at least a bottom portion thereof in contact with the non-fluoride boundary layer of the trench. A lead free solder bump is in electrical contact with the copper wire.

Mechanisms for resistivity measurement of bump structures

The embodiments described above provide mechanisms for bump resistivity measurement. By using designated bumps on one or more corners of dies, the resistivity of bumps may be measured without damaging devices and without a customized probing card. In addition, bump resistivity may be collected across the entire wafer. The collected resistivity data may be used to monitor the stability and/or health of processes used to form bumps and their underlying layers.

Mechanisms of forming connectors for package on package

The described embodiments of mechanisms of forming connectors for package on package enable smaller connectors with finer pitch, which allow smaller package size and additional connections. The conductive elements on one package are partially embedded in the molding compound of the package to bond with contacts or metal pads on another package. By embedding the conductive elements, the conductive elements may be made smaller and there are is gaps between the conductive elements and the molding compound. A pitch of the connectors can be determined by adding a space margin to a maximum width of the connectors. Various types of contacts on the other package can be bonded to the conductive elements.

Semiconductor integrated circuit device

In semiconductor integrated circuit devices for vehicle use, an aluminum pad on a semiconductor chip and an external device are coupled to each other by wire bonding using a gold wire for the convenience of mounting. Such a semiconductor integrated circuit device, however, causes a connection failure due to the interaction between aluminum and gold in use for a long time at a relatively high temperature (about 150 degrees C.). A semiconductor integrated circuit device can include a semiconductor chip as a part of the device, an electrolytic gold plated surface film (gold-based metal plated film) provided over an aluminum-based bonding pad on a semiconductor chip via a barrier metal film, and a gold bonding wire (gold-based bonding wire) for interconnection between the plated surface film and an external lead provided over a wiring board (wiring substrate).

Stacked Integrated Chips and Methods of Fabrication Thereof

Structure and methods of forming stacked semiconductor chips are described. In one embodiment, a method of forming a semiconductor chip includes forming an opening for a through substrate via from a top surface of a first substrate. The sidewalls of the opening are lined with an insulating liner and the opened filled with a conductive fill material. The first substrate is etched from an opposite bottom surface to form a protrusion, the protrusion being covered with the insulating liner. A resist layer is deposited around the protrusion to expose a portion of the insulating liner. The exposed insulating liner is etched to form a sidewall spacer along the protrusion.

Fluorine depleted adhesion layer for metal interconnect structure

A line trough and a via cavity are formed within a dielectric layer comprising a fluorosilicate glass (FSG) layer. A fluorine depleted adhesion layer is formed within the line trough and the via cavity either by a plasma treatment that removes fluorine from exposed surfaces of the FSG layer, or by deposition of a substantially fluorine-free dielectric layer. Metal is deposited within the line trough and the via cavity to form a metal line and a metal via. The fluorine depleted adhesion layer provides enhanced adhesion to the metal line compared with prior art structures in which a metal line directly contacts a FSG layer. The enhanced adhesion of metal with an underlying dielectric layer provides higher resistance to delamination for a semiconductor package employing lead-free C4 balls on a metal interconnect structure.

Semiconductor device including through via structures and redistribution structures

Semiconductor device including through via structure and redistribution structures is provided. The semiconductor device may include internal circuits on a first side of a substrate, a through via structure vertically penetrating the substrate to be electrically connected to one of the internal circuits, a redistribution structure on a second side of the substrate and electrically connected to the through via structure, and an insulating layer between the second side of the substrate and the redistribution structure. The redistribution structure may include a redistribution barrier layer and a redistribution metal layer, and the redistribution barrier layer may extend on a bottom surface of the redistribution metal layer and may partially surround a side of the redistribution metal layer.

PROCESS FLOW FOR FABRICATION OF CAP METAL OVER TOP METAL WITH SINTER BEFORE PROTECTIVE DIELECTRIC ETCH

A method of forming a semiconductor device for improving an electrical connection. The semiconductor device includes a top metal layer. A protective dielectric layer is formed over the top metal layer. A sintering operation is performed while the top metal layer is covered by the protective dielectric layer. After the sintering operation, the protective dielectric layer is patterned to expose areas on the top metal layer for bond pads of the semiconductor device. A bond pad cap is formed on the top metal layer where exposed by the protective dielectric layer. 1. A method of forming a semiconductor device , comprising:providing a device substrate containing the semiconductor device, the device substrate including a semiconductor material;forming an active component extending into the semiconductor material;forming an interconnect region on the semiconductor material; andforming a top metal layer in the interconnect region;forming a protective dielectric layer on the top metal layer, the protective dielectric layer being at least 1 micron thick;heating the semiconductor device in a sintering operation while the protective dielectric layer covers the top metal layer;after the sintering operation, removing the protective dielectric layer from a bond pad opening in the protective dielectric layer to expose a portion of the top metal layer; andforming a bond pad cap on the top metal layer in the bond pad opening.2. The method of claim 1 , wherein the sintering operation has a sinter thermal profile sufficient to passivate the active component.3. The method of claim 2 , wherein the sinter thermal profile includes heating the semiconductor device to a sinter temperature for a sinter time claim 2 , wherein a product of the sinter time claim 2 , in minutes claim 2 , and an Arrhenius factor of the sinter temperature is greater than 0.0027 minutes claim 2 , the Arrhenius factor of the sinter temperature being determined by the expression:{'br': None, 'i': E', 'k', '+T, 'sub': A ...

Semiconductor device

A semiconductor device includes a protective layer, a redistribution pattern, a pad pattern and an insulating polymer layer. The protective layer may be formed on a substrate. The redistribution pattern may be formed on the protective layer. An upper surface of the redistribution may be substantially flat. The pad pattern may be formed directly on the redistribution pattern. An upper surface of the pad pattern may be substantially flat. The insulating polymer layer may be formed on the redistribution pattern and the pad pattern. An upper surface of the insulating polymer layer may be lower than the upper surface of the pad pattern. The semiconductor device may have a high reliability.

Semiconductor Device and Method

In an embodiment, a device includes: a first reflective structure including first doped layers of a semiconductive material, alternating ones of the first doped layers being doped with a p-type dopant; a second reflective structure including second doped layers of the semiconductive material, alternating ones of the second doped layers being doped with a n-type dopant; an emitting semiconductor region disposed between the first reflective structure and the second reflective structure; a contact pad on the second reflective structure, a work function of the contact pad being less than a work function of the second reflective structure; a bonding layer on the contact pad, a work function of the bonding layer being greater than the work function of the second reflective structure; and a conductive connector on the bonding layer.

SELF-ALIGNED UNDER BUMP METAL

An integrated circuit including a self-aligned under bump metal pad formed on a top metal interconnect level in a connection opening in a dielectric layer, with a solder ball formed on the self-aligned under bump metal pad. Processes of forming integrated circuits including a self-aligned under bump metal pad formed on a top metal interconnect level in a connection opening in a dielectric layer, by a process of forming one or more metal layers on the interconnect level and the dielectric layer, selectively removing the metal from over the dielectric layer, and subsequently forming a solder ball on the self-aligned under bump metal pad. Some examples include additional metal layers formed after the selective removal process, and may include an additional selective removal process on the additional metal layers. 1. A method of forming an integrated circuit , comprising;forming an interconnect region;forming a top interconnect level in the interconnect region, so that the top interconnect level includes a connection pad;forming a dielectric layer over the top interconnect level;forming a connection opening in the dielectric layer such that a portion of a top surface of the connection pad is exposed, while the dielectric layer overlaps a periphery of the connection pad, and such that a connection opening sidewall is formed at a boundary of the dielectric layer over the connection pad;forming an under bump metal layer on the exposed portion of the top surface of the connection pad and over the dielectric layer, such that the under bump metal layer contacts the connection opening sidewall;selectively removing material from the under bump metal layer over the dielectric layer so as to form a self-aligned under bump metal pad, such that the self-aligned under bump metal pad contacts the connection opening sidewall, and such that the self-aligned under bump metal pad does not contact a top surface of the dielectric layer; andforming a solder ball on a top surface of the self ...

METHOD OF FORMING SEMICONDUCTOR DEVICE HAVING A DUAL MATERIAL REDISTRIBUTION LINE AND SEMICONDUCTOR DEVICE

A method of making a semiconductor device includes depositing a second conductive material over a first conductive material, wherein the second conductive material is different from the first conductive material, and the second conductive material defines a redistribution line (RDL). The method further includes depositing a passivation layer over the RDL, wherein depositing the passivation layer comprises forming a plurality of convex sidewalls, and each of the plurality of convex sidewalls extends beyond an edge of the RDL. 1. A method of making a semiconductor device , the method comprising:depositing a second conductive material over a first conductive material, wherein the second conductive material is different from the first conductive material, and the second conductive material defines a redistribution line (RDL); anddepositing a passivation layer over the RDL, wherein depositing the passivation layer comprises forming a plurality of convex sidewalls, and each of the plurality of convex sidewalls extends beyond an edge of the RDL.2. The method of claim 1 , wherein depositing the second conductive material comprises depositing aluminum.3. The method of claim 1 , further comprising depositing the first conductive material over an interconnect structure.4. The method of claim 3 , wherein depositing the first conductive material comprises depositing a copper containing material.5. The method of claim 1 , further comprising patterning the second conductive material to define the RDL.6. The method of claim 1 , wherein depositing the passivation layer comprises depositing the passivation layer to define a flat top surface of the passivation layer over the RDL.7. The method of claim 1 , wherein depositing the passivation layer comprises depositing the passivation layer to a thickness ranging from about 200 nanometers (nm) to about 2 claim 1 ,000 nm.8. A method of making a semiconductor device claim 1 , the method comprising:plating a first conductive material over ...

SEMICONDUCTOR DEVICES, SEMICONDUCTOR PACKAGES, AND METHODS OF MANUFACTURING THE SEMICONDUCTOR DEVICES

A semiconductor device includes a conductive component on a substrate, a passivation layer on the substrate and including an opening that exposes at least a portion of the conductive component, and a pad structure in the opening and located on the passivation layer, the pad structure being electrically connected to the conductive component. The pad structure includes a lower conductive layer conformally extending on an inner sidewall of the opening, the lower conductive layer including a conductive barrier layer, a first seed layer, an etch stop layer, and a second seed layer that are sequentially stacked, a first pad layer on the lower conductive layer and at least partially filling the opening, and a second pad layer on the first pad layer and being in contact with a peripheral portion of the lower conductive layer located on the top surface of the passivation layer. 1. A semiconductor device comprising:a conductive component on a substrate;a passivation layer on the substrate and including an opening therein, wherein the opening exposes at least a portion of the conductive component; and a lower conductive layer conformally extending on an inner sidewall of the opening and on a top surface of the passivation layer around the opening, the lower conductive layer including a conductive barrier layer, a first seed layer, an etch stop layer, and a second seed layer that are sequentially stacked,', 'a first pad layer on the lower conductive layer, the first pad layer at least partially filling the opening, and', 'a second pad layer on the first pad layer, the second pad layer laterally extending beyond the first pad layer to contact a peripheral portion of the lower conductive layer located on the top surface of the passivation layer., 'a pad structure on the passivation layer and in the opening, the pad structure electrically connected to the conductive component, the pad structure comprising2. The semiconductor device of claim 1 , wherein the second pad layer is ...

Bump structural designs to minimize package defects

A method of forming a chip package includes providing a chip with a plurality of first bumps, wherein the plurality of first bumps has a first height. The method further includes providing a substrate with a plurality of second bumps, wherein the plurality of second bumps has a second height. The method further includes bonding the plurality of first bumps to the plurality of second bumps to form a first bump structure of the chip package, wherein the first bump structure has a standoff, wherein a ratio of a sum of the first height and the second height to the standoff is equal to or greater than about 0.6 and less than 1.

Semiconductor structure and manufacturing method thereof

A semiconductor structure includes a substrate; a first dielectric layer disposed over the substrate; a conductive member surrounded by the first dielectric layer; a second dielectric layer disposed over the substrate, the first dielectric layer and the conductive member; a capacitor disposed over the conductive member and the second dielectric layer; a third dielectric layer disposed over the second dielectric layer and the capacitor; a conductive via disposed over and contacted with the conductive member, and extended through the second dielectric layer, the capacitor and the third dielectric layer; a conductive pad disposed over and contacted with the conductive via; a fourth dielectric layer disposed over the third dielectric layer and surrounding the conductive pad; and a conductive bump disposed over and electrically connected to the conductive pad, wherein the third dielectric layer includes an oxide layer and a nitride layer.

SEMICONDUCTOR DEVICE PRODUCTION METHOD

A semiconductor device production method includes forming a first recess portion in a first insulating film formed on a first substrate and a first conductive layer on the front surface of the first insulating film located inside and outside the first recess portion. In the first recess portion, a first pad is formed having a width of 3 μm or less and including the first conductive layer by performing a first polishing the first conductive layer at a first polishing rate and, after the first polishing, a second polishing the first conductive layer at a second polishing rate lower than the first polishing rate. The first pad of the first substrate and a second pad of a second substrate are joined together by annealing the first substrate and the second substrate. The selection ratio of the first conductive layer to the first insulating film is 0.3 to 0.4. 1. A semiconductor device production method comprising:forming a first recess portion in a first insulating film formed on a first substrate;forming a first conductive layer on a front surface of the first insulating film located both inside and outside the first recess portion;forming, in the first recess portion, a first pad having a width of 3 μm or less and including the first conductive layer by performing a first process of polishing the first conductive layer at a first polishing rate and, after the first process, a second process of polishing the first conductive layer at a second polishing rate which is lower than the first polishing rate, wherein the second process is performed such that a selection ratio of the first conductive layer to the first insulating film is 0.3 to 0.4; andjoining the first pad of the first substrate and a second pad of a second substrate together by annealing the first substrate and the second substrate.2. The semiconductor device production method according to claim 1 , wherein the first conductive layer contains copper.3. The semiconductor device production method according to ...

Interconnections for a substrate associated with a backside reveal

An apparatus relating generally to a substrate is disclosed. In this apparatus, a post extends from the substrate. The post includes a conductor member. An upper portion of the post extends above an upper surface of the substrate. An exterior surface of the post associated with the upper portion is in contact with a dielectric layer. The dielectric layer is disposed on the upper surface of the substrate and adjacent to the post to provide a dielectric collar for the post. An exterior surface of the dielectric collar is in contact with a conductor layer. The conductor layer is disposed adjacent to the dielectric collar to provide a metal collar for the post, where a top surface of each of the conductor member, the dielectric collar and the metal collar have formed thereon a bond structure for interconnection of the metal collar and the conductor member.

Interconnect Structure and Method of Forming Same

A device includes a first side interconnect structure over a first side of a substrate, wherein active circuits are in the substrate and adjacent to the first side of the substrate, a dielectric layer over a second side of the substrate, a pad embedded in the dielectric layer, the pad comprising an upper portion and a bottom portion formed of two different materials and a passivation layer over the dielectric layer. 1. A device comprising:a dielectric layer on a first side of a semiconductor substrate;a first redistribution line in a first recess in the dielectric layer, the first redistribution line comprising a first layer, the first layer completely filling the first recess;a contact pad in a second recess in the dielectric layer, wherein a width of the contact pad is greater than a width of a first redistribution line, wherein the contact pad comprises a second layer and a third layer over the second layer, wherein the second layer and the first layer are a same material, wherein the second layer and the third layer completely fills the second recess, the second layer and the third layer comprising different materials; anda passivation layer over the dielectric layer.2. The device of further comprising a transistor on a second side of the semiconductor substrate.3. The device of further comprising:a front-side interconnect structure on the second side of the semiconductor substrate; anda through via extending from a conductive feature in the front-side interconnect structure through the semiconductor substrate to the first side of the semiconductor substrate, wherein the contact pad is electrically coupled to the through via.4. The device of claim 3 , wherein the contact pad directly contacts the through via.5. The device of claim 1 , wherein the dielectric layer is interposed between the contact pad and the first side of the semiconductor substrate.6. The device of further comprising a passivation layer over the dielectric layer.7. The device of claim 6 , ...

IMAGE SENSOR

An image sensor is provided. The image sensor includes a first substrate; a plurality of photoelectric conversion units positioned in the first substrate; a first connection layer disposed on the first substrate; a plurality of first pixel pads disposed on the first connection layer; a plurality of first peripheral pads disposed on the first substrate; a plurality of second pixel pads respectively positioned on the plurality of first pixel pads; a plurality of second peripheral pads respectively positioned on the plurality of first peripheral pads; a second connection layer disposed on the plurality of second pixel pads and the plurality of second peripheral pads; a device disposed on the second connection layer; and a second substrate disposed on the second connection layer and the device, wherein a pitch of the plurality of first pixel pads is substantially the same as a pitch of the plurality of pixel regions of the first substrate. 1. An image sensor comprising:a first substrate comprising a pixel array region comprising a plurality of pixel regions and a peripheral region around the pixel array region;a plurality of photoelectric conversion units respectively positioned in the plurality of pixel regions of the first substrate;a first connection layer disposed on the pixel array region and the peripheral region of the first substrate;a plurality of first pixel pads disposed on a portion of the first connection layer on the pixel array region of the first substrate;a plurality of first peripheral pads disposed on a portion of the first connection layer on the peripheral region of the first substrate;a plurality of second pixel pads respectively positioned on the plurality of first pixel pads;a plurality of second peripheral pads respectively positioned on the plurality of first peripheral pads;a second connection layer disposed on the plurality of second pixel pads and the plurality of second peripheral pads;a device disposed on the second connection layer; anda ...

Method of fabricating a semiconductor device

A semiconductor device and a semiconductor package, the device including a first buffer dielectric layer on a first dielectric layer; a second dielectric layer and a second buffer dielectric layer sequentially disposed on the first buffer dielectric layer, the second buffer dielectric layer being in contact with the first buffer dielectric layer; and a pad interconnection structure that penetrates the first buffer dielectric layer and the second buffer dielectric layer, wherein the pad interconnection structure includes copper and tin.

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF

There is provided semiconductor devices and methods of forming the same, the semiconductor devices including: a first semiconductor element having a first electrode; a second semiconductor element having a second electrode; a Sn-based micro-solder bump formed on the second electrode; and a concave bump pad including the first electrode opposite to the micro-solder bump, where the first electrode is connected to the second electrode via the micro-solder bump and the concave bump pad. 1. A semiconductor device , comprising:a first semiconductor element having a first electrode;a second semiconductor element having a second electrode;a Sn-based micro-solder bump formed on the second electrode; anda concave bump pad formed on the first electrode opposite to the micro-solder bump,wherein the first electrode is connected to the second electrode via the micro-solder bump and the concave bump pad.2. The semiconductor device according to claim 1 , further comprising a second metal layer and a third metal layer that are sequentially formed on the concave bump pad claim 1 , wherein the third metal layer is diffused to the micro-solder bump claim 1 , and wherein the second metal layer is made of a metal of the vanadium group.3. The semiconductor device according to claim 2 , wherein the first semiconductor element has a plurality of concave bump pads thereon claim 2 , the diameters of which are different from each other.4. The semiconductor device according to claim 3 , wherein the diameters of the concave bump pads differ depending on the use of the respective electrodes connected thereto.5. The semiconductor device according to claim 2 , wherein a diameter of the micro-solder bump corresponds to a diameter of the concave bump pad.6. The semiconductor device according to claim 2 , further comprising a first metal layer that is sequentially formed on the concave bump pad together with the second metal layer and the third metal layer claim 2 , wherein the third metal layer is ...

Semiconductor package with air gap

The present application provides a semiconductor package with air gaps for reducing capacitive coupling between conductive features and a method for manufacturing the semiconductor package. The semiconductor package includes a first semiconductor structure and a second semiconductor structure bonded with the first semiconductor structure. The first semiconductor structure has a first bonding surface. The second semiconductor structure has a second bonding surface partially in contact with the first bonding surface. A portion of the first bonding surface is separated from a portion of the second bonding surface, a space between the portions of the first and second bonding surfaces is sealed and forms an air gap in the semiconductor package.

CHEMICAL MECHANICAL POLISHING FOR HYBRID BONDING

Representative implementations of techniques and methods include chemical mechanical polishing for hybrid bonding. The disclosed methods include depositing and patterning a dielectric layer on a substrate to form openings in the dielectric layer, depositing a barrier layer over the dielectric layer and within a first portion of the openings, and depositing a conductive structure over the barrier layer and within a second portion of the openings not occupied by the barrier layer, at least a portion of the conductive structure in the second portion of the openings coupled or contacting electrical circuitry within the substrate. Additionally, the conductive structure is polished to reveal portions of the barrier layer deposited over the dielectric layer and not in the second portion of the openings. Further, the barrier layer is polished with a selective polish to reveal a bonding surface on or at the dielectric layer. 1. (canceled)2. A method comprising:forming one or more openings in a dielectric layer of a substrate, the one or more openings extending at least partially through the dielectric layer from a surface of the dielectric layer, a width of at least one of the one or more openings being at least 5 microns;forming a barrier layer over the surface of the dielectric layer and surfaces of the openings;forming a conductive structure disposed over the barrier layer and in the openings;polishing at least a portion of the conductive structure to reveal a surface of the barrier layer; andpolishing the barrier layer to reveal a planar dielectric bonding surface with a surface roughness of less than 1 nm root mean square (RMS), the conductive structure is recessed less than 25 nm from the dielectric bonding surface.3. A method according to claim 2 , wherein the substrate is a first substrate claim 2 , the method further comprising directly bonding the planar dielectric bonding surface of the first substrate to a prepared planar bonding surface of a second substrate.4. ...

PACKAGE SYSTEMS INCLUDING PASSIVE ELECTRICAL COMPONENTS

A converter includes a plurality of active circuitry elements over a substrate. The converter further includes a passivation structure over the plurality of active circuitry elements, the passivation structure having at least one opening that is configured to expose at least one electrical pad of each active circuitry element. The converter further includes a plurality of passive electrical components over the passivation structure, wherein each passive electrical component is selectively connectable with at least one other passive electrical component, and a first side of each passive electrical component is electrically coupled to an electrical pad of each of at least two active circuitry elements. The converter further includes a plurality of electrical connection structures, wherein a first electrical connection structure electrically couples an electrical pad of a first active circuitry element to a corresponding passive electrical component, and the first electrical connection structure is completely within the passivation structure. 1. A converter comprising:a plurality of active circuitry elements over a substrate;a passivation structure over the plurality of active circuitry elements, the passivation structure having at least one opening that is configured to expose at least one electrical pad of each active circuitry element of the plurality of active circuitry elements;a plurality of passive electrical components over the passivation structure, wherein each passive electrical component of the plurality of passive electrical components is selectively connectable with at least one other passive electrical component of the plurality of electrical components, and a first side of each passive electrical component of the plurality of electrical components is electrically coupled to an electrical pad of each of at least two active circuitry elements of the plurality of active circuitry elements; anda plurality of electrical connection structures, wherein a first ...

BONDING PAD STRUCTURE, SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR PACKAGE STRUCTURE AND METHOD FOR PREPARING SAME

A bonding pad structure includes a bonding pad layer, and an expansion stagnating block that is at least wrapped by the bonding pad layer partially. The expansion stagnating block is subjected to high-temperature tempering treatment. A semiconductor structure, a semiconductor package structure and a method for preparing the same are also provided. 1. A bonding pad structure , comprising a bonding pad layer , and an expansion stagnating block that is at least wrapped by the bonding pad layer partially , the expansion stagnating block being subjected to A high-temperature tempering treatment.2. The bonding pad structure of claim 1 , wherein an isolation layer is arranged between the bonding pad layer and the expansion stagnating block.3. The bonding pad structure of claim 1 , wherein the bonding pad layer comprises a bonding pad top layer and a bonding pad bottom layer that are arranged in a stacked manner claim 1 , the bonding pad top layer is arranged on a side of a bonding pad close to a bonding surface claim 1 , the bonding pad bottom layer and the bonding pad top layer are integrated as a whole claim 1 , and projection of the bonding pad bottom layer on the bonding surface is positioned in projection of the bonding pad top layer on the bonding surface.4. The bonding pad structure of claim 3 , wherein an area of an end of the bonding pad layer close to the bonding surface is greater than an area of an end of the bonding pad layer far away from the bonding surface.5. The bonding pad structure of claim 1 , wherein the bonding pad layer is a metal block.6. A semiconductor package structure comprising a semiconductor substrate provided with the bonding pad structure of .7. The semiconductor package structure of claim 6 , wherein the semiconductor substrate comprises a substrate layer far away from a bonding surface claim 6 , and a dielectric layer and a dielectric surface layer that are arranged on the substrate layer sequentially claim 6 , the bonding pad structure ...

Semiconductor device with slanted conductive layers and method for fabricating the same

The present application discloses a semiconductor device with slanted conductive layers and a method for fabricating the semiconductor device with the slanted conductive layers. The semiconductor device includes a substrate, a first insulating layer positioned above the substrate, first slanted conductive layers positioned in the first insulating layer, and a top conductive layer positioned covering the first slanted conductive layers.

POST-PASSIVATION INTERCONNECT STRUCTURE

A semiconductor device includes a semiconductor substrate, a passivation layer overlying the semiconductor substrate, and an interconnect structure overlying the passivation layer. The interconnect structure includes a landing pad region and a dummy region electrically separated from each other. A protective layer is formed on the interconnect structure and has a first opening exposing a portion of the landing pad region and a second opening exposing a portion of the dummy region. A metal layer is formed on the exposed portion of landing pad region and the exposed portion of the dummy region. A bump is formed on the metal layer overlying the landing pad region. 1. A semiconductor device , comprising:a semiconductor substrate comprising circuitry and a plurality of metal layers formed between dielectric layers operable to route electrical signals formed therein;a passivation layer overlying the semiconductor substrate;an interconnect structure overlying and interfacing a top surface of the passivation layer,the interconnect structure comprising a landing pad conductive element and a plurality of dummy conductive elements, wherein the landing pad conductive element and the dummy conductive elements are electrically separated;a protective layer overlying the interconnect structure and comprising a first opening exposing a portion of the landing pad conductive element and a second opening exposing a portion of each of the plurality of dummy conductive elements;a metal layer comprising a first portion on a topmost surface of the protective layer and on the exposed portion of the landing pad conductive element and a plurality of second portions on the topmost surface of the protective layer and on the exposed portion of the dummy conductive element, the plurality of second portions of the metal layer being electrically separated from the semiconductor substrate and from the first portion of the metal layer; anda single bump on the first portion of the metal layer ...

Advanced Device Assembly Structures And Methods

A microelectronic assembly includes a first substrate having a surface and a first conductive element and a second substrate having a surface and a second conductive element. The assembly further includes an electrically conductive alloy mass joined to the first and second conductive elements. First and second materials of the alloy mass each have a melting point lower than a melting point of the alloy. A concentration of the first material varies in concentration from a relatively higher amount at a location disposed toward the first conductive element to a relatively lower amount toward the second conductive element, and a concentration of the second material varies in concentration from a relatively higher amount at a location disposed toward the second conductive element to a relatively lower amount toward the first conductive element. 1. A microelectronic assembly , comprising:a first substrate having a first surface and first conductive elements;a second substrate having a second surface and second conductive elements; anda plurality of electrically conductive masses, each mass joined to a respective pair of the first and second conductive elements,wherein each electrically conductive mass includes a first material, a second material, and a third material, the third material selected to increase the melting point of an alloy including the third material and at least one of the first material or the second material,wherein a concentration of the first material varies from a relatively higher amount at a location disposed toward the respective first conductive element to a relatively lower amount toward the respective second conductive element,wherein a concentration of the second material varies in concentration from a relatively higher amount at a location disposed toward the respective second conductive element to a relatively lower amount toward the respective first conductive element, andwherein the third material has a highest concentration at a location ...

Semiconductor Device and Method of Forming Patterned Repassivation Openings Between RDL and UBM to Reduce Adverse Effects of Electro-Migration

A semiconductor device has a semiconductor wafer with a first conductive layer formed over a surface of the semiconductor wafer. A first insulating layer is formed over the surface of the semiconductor wafer and first conductive layer. A second conductive layer is formed over the first insulating layer and first conductive layer. A second insulating layer is formed over the first insulating layer and second conductive layer. A plurality of openings is formed in the second insulating layer in a bump formation area of the semiconductor wafer to expose the second conductive layer and reduce adverse effects of electro-migration. The openings are separated by portions of the second insulating layer. A UBM layer is formed over the openings in the second insulating layer in the bump formation area electrically connected to the second conductive layer. A bump is formed over the UBM layer.

Contact pad structure, an electronic component, and a method for manufacturing a contact pad structure

According to various embodiments, a contact pad structure may be provided, the contact pad structure may include: a dielectric layer structure; at least one contact pad being in physical contact with the dielectric layer structure; the at least one contact pad including a metal structure and a liner structure, wherein the liner structure is disposed between the metal structure of the at least one contact pad and the dielectric layer structure, and wherein a surface of the at least one contact pad is at least partially free from the liner structure, and a contact structure including an electrically conductive material; the contact structure completely covering at least the surface being at least partially free from the liner structure of the at least one contact pad, wherein the liner structure and the contact structure form a diffusion barrier for a material of the metal structure of the at least one contact pad.

Semiconductor structure and method for forming the same

A semiconductor structure includes a first die, a second die over the first die, and a positioning member disposed within a bonding dielectric and configured to align the second die with the first die. A method for forming a semiconductor structure includes receiving a first die having a first bonding layer; forming a recess on the first bonding layer; forming a positioning member on a second die; bonding the second die over the first die using the first bonding layer; and disposing the positioning member into the recess.

System and method to enhance solder joint reliability

A reliability cover that is disposed over at least one of an integrated circuit package and a Si die of the integrated circuit package is disclosed. The integrated circuit package is mountable to a printed circuit board via a plurality of solder balls. The reliability cover is configured to reduce a difference in a coefficient of thermal expansion between the integrated circuit package and the printed circuit board, and between the Si die and a substrate of the integrated circuit package by a threshold value.

Bonding Pad Process with Protective Layer

The present disclosure describes an bonding pad formation method that incorporates an tantalum (Ta) conductive layer to block mobile ionic charges generated during the aluminum-copper (AlCu) metal fill deposition. For example, the method includes forming one or more interconnect layers over a substrate and forming a dielectric over a top interconnect layer of the one or more interconnect layers. A first recess is formed in the dielectric to expose a line or a via from the top interconnect layer. A conductive layer is formed in the first recess to form a second recess that is smaller than the first recess. A barrier metal layer is formed in the second recess to form a third recess that is smaller than the second recess. A metal is formed to fill the third recess.

Post-passivation interconnect structure and method of forming the same

A semiconductor device includes a passivation layer formed on a semiconductor substrate, a protective layer overlying the passivation layer and having an opening, an interconnect structure formed in the opening of the protective layer, a bump formed on the interconnect structure, and a molding compound layer overlying the interconnect structure and being in physical contact with a lower portion of the bump.

SEMICONDUCTOR CONTACT STRUCTURE HAVING STRESS BUFFER LAYER FORMED BETWEEN UNDER BUMP METAL LAYER AND COPPER PILLAR

Semiconductor apparatus and method for manufacturing semiconductor apparatus are provided. Semiconductor apparatus includes a semiconductor substrate having metal pads, a first passivation layer, a second passivation layer, an under bump metal layer, a stress buffer layer, a copper pillar and a solder structure. First passivation layer is formed on the semiconductor substrate and covers a portion of each metal pad, the first passivation layer has first passivation layer openings to expose a first portion of each metal pad. Second passivation layer is formed on the first passivation layer, the second passivation layer has second passivation layer openings to expose a second portion of each metal pad. Under bump metal layer is formed on the second portion of each metal pad exposed by the second passivation layer opening. Stress buffer layer is formed on the under bump metal layer, and the copper pillar is disposed on the stress buffer layer. 1. A semiconductor apparatus , comprising:a semiconductor substrate having at least one metal pad;a first passivation layer formed on the semiconductor substrate and covering a portion of the at least one metal pad, the first passivation layer having at least one first passivation layer opening to expose a first portion of the at least one metal pad;a second passivation layer formed on the first passivation layer, the second passivation layer having at least one second passivation layer opening to expose a second portion of the at least one metal pad;an under bump metal layer at least formed on the second portion of the at least one metal pad exposed by the second passivation layer opening;a stress buffer layer formed on the under bump metal layer, wherein the material of the stress buffer layer comprises tin, tin-silver, tin alloy, indium or indium alloy; anda copper pillar disposed on the stress buffer layer.2. The semiconductor apparatus according to claim 1 , wherein the material of the under bump metal layer comprises ...

Wafer Level Package (WLP) and Method for Forming the Same

A semiconductor device structure and method for forming the same are provided. The semiconductor device structure includes a substrate and a conductive pad formed on the substrate. The semiconductor device structure includes a protection layer formed over the conductive pad and a post-passivation interconnect (PPI) structure formed at least in the protection layer. The PPI structure is electrically connected to the conductive pad. The semiconductor device structure also includes a first moisture-resistant layer formed over the protection layer, and the protection layer and the first moisture-resistant layer are made of different materials. The semiconductor device structure further includes an under bump metallurgy (UBM) layer formed over the first moisture-resistant layer and connected to the PPI structure. 1. A semiconductor device comprising:a first conductive pad over a chip structure;a passivation layer over the first conductive pad;a first protection layer over the passivation layer;a post-passivation interconnect (PPI) pad extending through the first protection layer and the passivation layer, the PPI pad being coupled to the first conductive pad;an insulating layer surrounding sidewalls of the chip structure and the first protection layer;a second protection layer over the first protection layer and the insulating layer;a PPI structure extending through the second protection layer, the PPI structure being coupled to the PPI pad;a first moisture-resistant layer over the second protection layer and the PPI structure;a ball-like bump over the first moisture-resistant layer; anda second conductive pad over the ball-like bump.2. The semiconductor device of claim 1 , wherein at least a portion of the passivation layer is disposed between the PPI structure and the first conductive pad in a direction perpendicular to a major surface of the chip structure.3. The semiconductor device of claim 1 , further comprising an under bump metallurgy (UBM) extending through the ...

Semiconductor device and semiconductor package including the same

A semiconductor device and a semiconductor package, the device including a first buffer dielectric layer on a first dielectric layer; a second dielectric layer and a second buffer dielectric layer sequentially disposed on the first buffer dielectric layer, the second buffer dielectric layer being in contact with the first buffer dielectric layer; and a pad interconnection structure that penetrates the first buffer dielectric layer and the second buffer dielectric layer, wherein the pad interconnection structure includes copper and tin.

Bonded Structures for Package and Substrate

The embodiments described provide elongated bonded structures near edges of packaged structures free of solder wetting on sides of copper posts substantially facing the center of the packaged structures. Solder wetting occurs on other sides of copper posts of these bonded structures. The elongated bonded structures are arranged in different arrangements and reduce the chance of shorting between neighboring bonded structures. In addition, the elongated bonded structures improve the reliability performance.

Semiconductor structure

The invention provides a semiconductor structure. The semiconductor structure includes a substrate. A first passivation layer is disposed on the substrate. A conductive pad is disposed on the first passivation layer. A second passivation layer is disposed on the first passivation layer. A passive device is disposed on the conductive pad, passing through the second passivation layer. An organic solderability preservative film covers the passive device.

Alignment Marks in Substrate Having Through-Substrate Via (TSV)

A device includes a substrate, and an alignment mark including a conductive through-substrate via (TSV) penetrating through the substrate.

Diffusion barrier collar for interconnects

Representative implementations of techniques and devices are used to reduce or prevent conductive material diffusion into insulating or dielectric material of bonded substrates. Misaligned conductive structures can come into direct contact with a dielectric portion of the substrates due to overlap, especially while employing direct bonding techniques. A barrier interface that can inhibit the diffusion is disposed generally between the conductive material and the dielectric at the overlap.

MULTI-METAL CONTACT STRUCTURE

A first conductive material having a first hardness is disposed within a recess or opening of a microelectronic component, in a first preselected pattern, and forms a first portion of an interconnect structure. A second conductive material having a second hardness different from the first hardness is disposed within the recess or opening in a second preselected pattern and forms a second portion of the interconnect structure. 1. A microelectronic component comprising one or more semiconductor devices , the microelectronic component comprising:a substrate including a recess or opening extending from a first surface of the substrate, at least a portion of the first surface of the substrate having a planarized topography;a first conductive material having a first melting point, disposed within the recess or opening and forming a first portion of an interconnect structure of the microelectronic component; anda second conductive material having a second melting point different from the first melting point, disposed within the recess or opening and at least partially surrounded by or adjacent to the first conductive material, the second conductive material forming a second portion of the interconnect structure of the microelectronic component, the second portion of the interconnect structure extending normal to the plane of the substrate; anda barrier layer between the substrate and the first conductive material.2. The microelectronic component of claim 1 , further comprising a layer of the first conductive material disposed over an exposed surface of the second portion of the interconnect structure.3. The microelectronic component of claim 1 , further comprising a layer of a third conductive material claim 1 , different from the first and second conductive materials claim 1 , disposed over an exposed surface of the first and second portions of the interconnect structure.4. The microelectronic component of claim 1 , further comprising one or more additional conductive ...

Forming Large Chips Through Stitching

A method includes performing a first light-exposure and a second a second light-exposure on a photo resist. The first light-exposure is performed using a first lithograph mask, which covers a first portion of the photo resist. The first portion of the photo resist has a first strip portion exposed in the first light-exposure. The second light-exposure is performed using a second lithograph mask, which covers a second portion of the photo resist. The second portion of the photo resist has a second strip portion exposed in the second light-exposure. The first strip portion and the second strip portion have an overlapping portion that is double exposed. The method further includes developing the photo resist to remove the first strip portion and the second strip portion, etching a dielectric layer underlying the photo resist to form a trench, and filling the trench with a conductive feature.

Redistribution Layer Metallic Structure and Method

The present disclosure provides an integrated circuit (IC) structure. The IC structure includes a semiconductor substrate; an interconnection structure formed on the semiconductor substrate; and a redistribution layer (RDL) metallic feature formed on the interconnection structure. The RDL metallic feature further includes a barrier layer disposed on the interconnection structure; a diffusion layer disposed on the barrier layer, wherein the diffusion layer includes metal and oxygen; and a metallic layer disposed on the diffusion layer. 1. A method of fabricating an integrated circuit (IC) structure , comprising:forming IC devices on a semiconductor substrate;forming an interconnection structure on the semiconductor substrate, wherein the interconnection structure includes a plurality of conductive features coupled with the IC devices;forming a first passivation layer on the interconnection structure, wherein the first passivation layer includes a first opening that exposes a top conductive feature of the plurality of the conductive features;depositing a barrier layer on the first passivation layer and on the top conductive feature within the first opening;performing an oxygen treatment to the barrier layer to form a diffusion layer; anddepositing a metallic layer on the diffusion layer.2. The method of claim 1 , further comprising patterning the metallic layer claim 1 , the diffusion layer and the barrier layer to form a redistribution layer (RDL) metallic feature.3. The method of claim 2 , further comprising forming a second passivation layer on the RDL metallic feature and the first passivation layer claim 2 , wherein the RDL metallic feature is landing on the top conductive feature within the first opening and extends from the top conductive feature in the first opening to a second opening of the second passivation layer as a bonding pad.4. The method of claim 3 , whereinthe second opening is horizontally distanced away from the first opening; andeach of the ...

Alignment Marks in Substrate Having Through-Substrate Via (TSV)

A device includes a substrate, and an alignment mark including a conductive through-substrate via (TSV) penetrating through the substrate. 1. A device comprising:a substrate having a first surface and a second surface opposite the first surface;an interconnect adjacent the first surface of the substrate;a plurality of conductive features adjacent the second surface of the substrate;a plurality of first through-substrate vias (TSVs) extending from the first surface of the substrate to the second surface of the substrate, the first TSVs electrically connecting the conductive features to the interconnect; anda first alignment mark comprising a plurality of second TSVs extending from the first surface of the substrate to the second surface of the substrate, the second TSVs being electrically isolated from the conductive features and the interconnect, the second TSVs being disposed in an alignment mark region of the substrate, the alignment mark region being free from the first TSVs.2. The device of claim 1 , wherein the alignment mark region of the substrate has a length of between about 50 μm and about 400 μm claim 1 , and the alignment mark region of the substrate has a width of between about 50 μm and about 400 μm.3. The device of claim 1 , wherein a first subset of the second TSVs are disposed along a first axis claim 1 , and a second subset of the second TSVs are disposed along a second axis claim 1 , the first axis and the second axis being parallel to the second surface of the substrate.4. The device of claim 3 , wherein the first axis intersects the second axis at first point disposed at a center of the alignment mark region.5. The device of claim 3 , wherein the first axis intersects the second axis at a first point disposed offset from a center of the alignment mark region.6. The device of claim 1 , wherein the interconnect comprises a second alignment mark claim 1 , the second alignment mark being aligned to the first alignment mark.7. The device of claim 1 , ...

Die stack structure and method of fabricating the same

Provided is a die stack structure including a first die, a second die, a first bonding structure, and a second bonding structure. The first bonding structure is disposed on a back side of the first die. The second bonding structure is disposed on a front side of the second die. The first die and the second die are bonded together via the first bonding structure and the second bonding structure and a bondable topography variation of a surface of the first bonding structure bonding with the second bonding structure is less than less than 1 μm per 1 mm range. A method of manufacturing the die stack structure is also provided.

Die stack structure and method of fabricating the same and package

Provided is a die stack structure including a first die and a second die. The first die and the second die are bonded together through a hybrid bonding structure. At least one of a first test pad of the first die or a second test pad of the second die has a protrusion of the at least one of the first test pad or the second test pad, and a bonding insulating layer of the hybrid bonding structure covers and contacts with the protrusion, so that the first test pad and the second test pad are electrically isolated from each other.

Ball Amount Process in the Manufacturing of Integrated Circuit

An integrated circuit structure includes a semiconductor substrate, a metal pad over the semiconductor substrate, a passivation layer including a portion over the metal pad, a polymer layer over the passivation layer, and a Post-Passivation Interconnect (PPI) over the polymer layer. The PPI is electrically connected to the metal pad. The PPI includes a PPI line have a first width, and a PPI pad having a second width greater than the first width. The PPI pad is connected to the PPI line. The PPI pad includes an inner portion having a first thickness, and an edge portion having a second thickness smaller than the first thickness.

SEMICONDUCTOR DEVICE, MANUFACTURING METHOD, SOLID STATE IMAGE SENSOR, AND ELECTRONIC EQUIPMENT

The present disclosure relates to a semiconductor device, a manufacturing method, a solid state image sensor, and electronic equipment that can achieve further improvement in reliability. Connection pads are formed in interlayer films provided respectively in interconnection layers of a sensor substrate on which a sensor surface having pixels is formed and a signal processing substrate configured to perform signal processing on the sensor substrate to make an electrical connection between the sensor substrate and the signal processing substrate. Then, a metal oxide film is formed between the interlayer films of the sensor substrate and the signal processing substrate, between the connection pad formed on a side toward the sensor substrate and the interlayer film on a side toward the signal processing substrate, and between the connection pad formed on the side toward the signal processing substrate and the interlayer film on the side toward the sensor substrate. The present technology can be applied to a laminated-type CMOS image sensor, for example. 1. A semiconductor device comprising:connection pads formed in interlayer films provided respectively in interconnection layers of a first semiconductor substrate and a second semiconductor substrate to make an electrical connection between the first semiconductor substrate and the second semiconductor substrate; anda metal oxide film formed between the interlayer films of the first semiconductor substrate and the second semiconductor substrate, between the connection pad formed on a side toward the first semiconductor substrate and the interlayer film on a side toward the second semiconductor substrate, and between the connection pad formed on the side toward the second semiconductor substrate and the interlayer film on the side toward the first semiconductor substrate.2. The semiconductor device according to claim 1 , whereina metal film is formed on at least one bonding surface of a bonding surface including the ...

Post-Passivation Interconnect Structure and Method of Forming Same

A semiconductor device including a dielectric layer formed on the surface of a post-passivation interconnect (PPI) structures. A polymer layer is formed on the dielectric layer and patterned with an opening to expose a portion of the dielectric layer. The exposed portion of the dielectric layer is then removed to expose a portion of the PPI structure. A solder bump is then formed over and electrically connected to the first portion of the PPI structure. 1. A method of forming a semiconductor device , the method comprising:forming a metal contact pad over a substrate;forming one or more first polymer layers over the metal contact pad, the one or more first polymer layers extending over a top surface and sidewalls of the metal contact pad;forming an interconnect layer over the one or more first polymer layers;forming a dielectric layer on exposed surfaces of the interconnect layer and the one or more first polymer layers;forming a second polymer layer on the dielectric layer;patterning the second polymer layer and the dielectric layer to form an opening, the interconnect layer being exposed in the opening; andforming an external connection in the opening, the external connection being electrically coupled to the interconnect layer.2. The method of claim 1 , wherein the dielectric layer comprises silicon nitride.3. The method of claim 1 , wherein forming the dielectric layer is performed at least in part by a chemical vapor deposition process.4. The method of claim 3 , wherein the chemical vapor deposition process is a low pressure chemical vapor deposition process.5. The method of claim 1 , wherein forming the dielectric layer comprises forming a conformal layer.6. The method of claim 5 , wherein the dielectric layer has a thickness less than about 3 μm.7. The method of claim 5 , wherein a thickness of the dielectric layer is less than a thickness of the interconnect layer.8. A method of forming a semiconductor device claim 5 , the method comprising:forming a ...

Silicon Carbide Device and Method for Forming a Silicon Carbide Device

A power semiconductor device includes a semiconductor substrate having a wide bandgap semiconductor material and a first surface, an insulation layer above the first surface of the semiconductor substrate, the insulation layer including at least one opening extending through the insulation layer in a vertical direction, a front metallization above the insulation layer with the insulation layer being interposed between the front metallization and the first surface of the semiconductor substrate, and a metal connection arranged in the opening of the insulation layer and electrically conductively connecting the front metallization with the semiconductor substrate; wherein the front metallization includes at least one layer that is a metal or a metal alloy having a higher melting temperature than an intrinsic temperature of the wide bandgap semiconductor material of the semiconductor substrate. 1. A power semiconductor device , comprising:a semiconductor substrate comprising a wide bandgap semiconductor material and a first surface;an insulation layer above the first surface of the semiconductor substrate, the insulation layer comprising at least one opening extending through the insulation layer in a vertical direction;a front metallization above the insulation layer with the insulation layer being interposed between the front metallization and the first surface of the semiconductor substrate; anda metal connection arranged in the opening of the insulation layer and electrically conductively connecting the front metallization with the semiconductor substrate;wherein the front metallization comprises at least one layer that is a metal or a metal alloy having a higher melting temperature than an intrinsic temperature of the wide bandgap semiconductor material of the semiconductor substrate.2. The power semiconductor device of claim 1 , wherein the intrinsic temperature of the wide bandgap semiconductor material of the semiconductor substrate is at least 600° C.3. The ...

Semiconductor Device, Semiconductor Arrangement and Method for Producing the Same

A semiconductor device includes a semiconductor wafer or a single semiconductor chip or die, and a layer stack. The layer stack comprises a first layer comprising NiSi, and a second layer comprising NiV, wherein the second layer is arranged between the first layer and the semiconductor wafer or single semiconductor chip or die.

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

A semiconductor device capable of suppressing propagation of a crack caused by a temperature cycle at a bonding part between a bonding pad and a bonding wire is provided. A semiconductor device according to an embodiment includes a semiconductor chip having bonding pads and bonding wires. The bonding pad includes a barrier layer and a bonding layer formed on the barrier layer and formed of a material containing aluminum. The bonding wire is bonded to the bonding pad and formed of a material containing copper. An intermetallic compound layer formed of an intermetallic compound containing copper and aluminum is formed so as to reach the barrier layer from the bonding wire in at least a part of the bonding part between the bonding pad and the bonding wire. 1. A semiconductor device , comprising:a semiconductor chip having a bonding pad which includes a barrier layer and a bonding layer formed on the barrier layer, and the bonding pad formed of a material containing aluminum; anda bonding wire bonded to the bonding pad and formed of a material containing copper,wherein an intermetallic compound layer formed of an intermetallic compound containing copper from the bonding wire and aluminum from the bonding pad is formed such that at least a portion of the intermetallic compound layer reaches the barrier layer.2. The semiconductor device according to claim 1 ,wherein the portion of the intermetallic compound layer reaching from the bonding wire to the barrier layer is disposed along an outer periphery of the copper wire.3. The semiconductor device according to claim 1 ,wherein the barrier layer is formed of a material containing titanium or tantalum.4. The semiconductor device according to claim 1 ,wherein the thickness of the barrier layer is greater than or equal to 0.03 μm and less than 0.2 μm.5. The semiconductor device according to claim 1 ,wherein the semiconductor chip further includes a first interlayer insulating film and a first wiring formed in the first ...

Semiconductor Device and Method of Manufacture

A semiconductor device including a test pad contact and a method of manufacturing the semiconductor device are disclosed. In an embodiment, a semiconductor device may include a first metal feature and a second metal feature disposed in a single top metal layer over a substrate. A test pad may be formed over and electrically connected to the first metal feature. A first passivation layer may be formed over the second metal feature and the test pad and may cover top and side surfaces of the test pad. A first via may be formed penetrating the first passivation layer and contacting the test pad and a second via may be formed penetrating the first passivation layer and contacting the second metal feature. 1. A semiconductor device comprising:a first conductive feature and a second conductive feature over a semiconductor substrate, the first conductive feature and the second conductive feature comprising copper, wherein a top surface of the first conductive feature is level with a top surface of the second conductive feature;a third conductive feature over and electrically coupled to the first conductive feature, the third conductive feature comprising aluminum;a bond layer over the third conductive feature and the second conductive feature;a first bond pad extending through the bond layer and electrically coupled to the third conductive feature; anda second bond pad extending through the bond layer and electrically coupled to the second conductive feature, wherein a top surface of the second bond pad is level with a top surface of the first bond pad and a top surface of the bond layer, and wherein the first bond pad has a first height less than a second height of the second bond pad.2. The semiconductor device of claim 1 , wherein a bottom surface of the first bond pad is disposed below a top surface of the third conductive feature.3. The semiconductor device of claim 1 , further comprising a via electrically coupled the third conductive feature to the first conductive ...

Contact Pad for Semiconductor Device

A device and method of manufacture is provided that utilize a dummy pad feature adjacent contact pads. The contact pads may be contact pads in an integrated fan-out package in which a molding compound is placed along sidewalls of a die and the contact pads extend over the die and the molding compound. The contact pads are electrically coupled to the die using one or more redistribution layers. The dummy pad features are electrically isolated from the contact pads. In some embodiments, the dummy pad features partially encircle the contact pads and are located in a corner region of the molding compound, a corner region of the die, and/or an interface region between an edge of the die and the molding compound. 1. A device comprising:a substrate;contact pads over the substrate; anddummy pad features over the substrate, each of the dummy pad features being adjacent to a corresponding one of the contact pads, each of the dummy pad features being electrically disconnected from the corresponding one of the contact pads, wherein no other conductive material is interposed directly between each of the dummy pad features and the corresponding one of the contact pads.2. The device of claim 1 , wherein the substrate comprises a semiconductor die and molding compound along sidewalls of the semiconductor die.3. The device of claim 2 , wherein at least one of the dummy pad features is adjacent an interface between the sidewalls of the semiconductor die and the molding compound in a plan view.4. The device of claim 1 , further comprising:a protective layer over the dummy pad features; anda plurality of under bump metallization features, wherein each of the plurality of under bump metallization features extends through the protective layer to one of the contact pads.5. The device of claim 4 , wherein the protective layer extends along sidewalls of the dummy pad features and the contact pads.6. The device of claim 1 , wherein a first set of the contact pads are free of the dummy pad ...

Interconnect Structure and Method of Forming Same

A device includes a first side interconnect structure over a first side of a substrate, wherein active circuits are in the substrate and adjacent to the first side of the substrate, a dielectric layer over a second side of the substrate, a pad embedded in the dielectric layer, the pad comprising an upper portion and a bottom portion formed of two different materials and a passivation layer over the dielectric layer. 1. A device comprising:a first side interconnect structure over a first side of a substrate, wherein active circuits are in the substrate and adjacent to the first side of the substrate;a dielectric layer over a second side of the substrate;a pad embedded in the dielectric layer, the pad comprising an upper portion and a bottom portion formed of two different materials; anda passivation layer over the dielectric layer.2. The device of claim 1 , further comprising:a via extending through the substrate and partially through the dielectric layer.3. The device of claim 1 , further comprising:a first metal line embedded in the dielectric layer, wherein a bottom of the first metal line is substantially level with a bottom of the pad.4. The device of claim 3 , wherein:a width of the pad is greater than a width of the first metal line.5. The device of claim 3 , further comprising:an isolation region in the substrate; anda second metal line embedded in the dielectric layer, wherein a distance between the first metal line and the isolation region is substantially equal to a distance between the isolation region and the second metal line.6. The device of claim 1 , wherein:the bottom portion of the pad is formed of a first conductive material; andthe upper portion of the pad is formed of a second conductive material, and wherein the upper portion of the pad is of a trapezoidal shape surrounded by the bottom portion of the pad.7. The device of claim 6 , wherein:the first conductive material is copper; andthe second conductive material is nickel.8. The device of claim ...

WARPAGE REDUCTION IN STRUCTURES WITH ELECTIRCAL CIRCUITRY

To reduce warpage in at least one area of a wafer, a stress/warpage management layer (810) is formed to over-balance and change the direction of the existing warpage. For example, if the middle of the area was bulging up relative to the area's boundary, the middle of the area may become bulging downward, or vice versa. Then the stress/warpage management layer is processed to reduce the over-balancing. For example, the stress/management layer can be debonded from the wafer at selected locations, or recesses can be formed in the layer, or phase changes can be induced in the layer. In other embodiments, this layer is tantalum-aluminum that may or may not over-balance the warpage; this layer is believed to reduce warpage due to crystal-phase-dependent stresses which dynamically adjust to temperature changes so as to reduce the warpage (possibly keeping the wafer flat through thermal cycling). Other features are also provided.

SEMICONDUCTOR DEVICE

A semiconductor device includes a substrate; a semiconductor layer; a first protective film; a first adhesive layer disposed on the first protective film; an electrode pad disposed on the first protective film; a second protective film disposed to cover and be in contact with the electrode pad and the first adhesive layer; and a first opening formed in part of the second protective film such that the upper surface of the electrode pad is exposed, wherein in a plan view, the first adhesive layer includes a first projection projecting from the electrode pad radially in a direction of the periphery of the electrode pad and continuously surrounding the periphery of the electrode pad; and the second protective film is continuously to cover and contact part of the upper and side surfaces of the electrode pad, the upper and side surfaces of first projection, and the first protective film. 1. A semiconductor device , comprising:a substrate;a semiconductor layer disposed on the substrate;a first protective film disposed on the semiconductor layer;a first adhesive layer disposed on the first protective film, and including at least one metal material selected from Ti, TiN, Ta, and TaN or a laminate including a combination of Ti, TiN, Ta, and TaN;an electrode pad disposed on the first protective film and in contact with side surfaces and part of an upper surface of the first adhesive layer;a second protective film disposed to cover and be in contact with the electrode pad and the first adhesive layer; anda first opening formed in part of the second protective film such that an upper surface of the electrode pad is exposed,wherein in a plan view, the first adhesive layer includes a first projection projecting from the electrode pad radially in a direction of a periphery of the electrode pad and continuously surrounding the electrode pad, andthe second protective film is continuously disposed to cover and be in contact with part of the upper surface and part of side surfaces of ...

EXTRUSION-RESISTANT SOLDER INTERCONNECT STRUCTURES AND METHODS OF FORMING

Various embodiments include methods of forming interconnect structures, and the structures formed by such methods. In one embodiment, an interconnect structure can include: a photosensitive polyimide (PSPI) layer including a pedestal portion; a controlled collapse chip connection (C4) bump overlying the pedestal portion of the PSPI layer; a solder overlying the C4 bump and contacting a side of the C4 bump; and an underfill layer abutting the pedestal portion of the PSPI and the C4 bump, wherein the underfill layer and the solder form a first interface separated from the PSPI pedestal. 1. An interconnect structure comprising:a photosensitive polyimide (PSPI) layer including a pedestal portion;a controlled collapse chip connection (C4) bump overlying the pedestal portion of the PSPI layer;a solder overlying the C4 bump and contacting a side of the C4 bump; andan underfill layer abutting the pedestal portion of the PSPI and the C4 bump, wherein the underfill layer and the solder form a first interface separated from the PSPI pedestal.2. The interconnect structure of claim 1 , wherein the solder is completely isolated from the PSPI layer.3. The interconnect structure of claim 1 , wherein the C4 bump includes:a pad;a ball limiting metallurgy (BLM) layer over the pad; anda thick copper layer over the BLM layer.4. The interconnect structure of claim 3 , wherein the solder overlies the thick copper layer and directly contacts a side of the thick copper layer.5. The interconnect structure of claim 4 , wherein the solder directly contacts a side of the BLM layer.6. The interconnect structure of claim 1 , further comprising a gap between the solder and the pedestal portion of the PSPI layer.7. The interconnect structure of claim 6 , wherein the underfill and the pedestal portion of the PSPI layer form a second interface.8. The interconnect structure of claim 7 , wherein the first interface and the second interface are separated by the gap.9. The interconnect structure of claim ...

BONDING PAD LAYER SYSTEM, GAS SENSOR AND METHOD FOR MANUFACTURING A GAS SENSOR

A bonding pad layer system is deposited on a semiconductor chip as a base, for example, a micromechanical semiconductor chip, in which at least one self-supporting dielectric membrane made up of dielectric layers, a platinum conductor track and a heater made of platinum is integrated. In the process, the deposition of a tantalum layer takes place first, upon that the deposition of a first platinum layer, upon that the deposition of a tantalum nitride layer, upon that the deposition of a second platinum layer and upon that the deposition of a gold layer, at least one bonding pad for connecting with a bonding wire being formed in the gold layer. The bonding pad is situated in the area of the contact hole on the semiconductor chip, in which a platinum conductor track leading to the heater is connected using a ring contact and/or is connected outside this area. 113-. (canceled)14. A bonding pad layer system , comprising:a semiconductor chip as a base, upon which a tantalum layer, a first platinum layer, a tantalum nitride layer, a second platinum layer, and a gold layer, are sequentially deposited, at least one bonding pad being formed in the gold layer for connecting to a bonding wire.15. The bonding pad layer system as recited in claim 14 ,wherein the semiconductor chip is a micromechanical semiconductor chip, in which at least one self-supporting dielectric membrane including dielectric layers, a platinum conductor track and a heater made of platinum is integrated.16. The bonding pad layer system as recited in claim 15 ,wherein at least one of the at least one bonding pad is situated in an area of a contact hole on the semiconductor chip, in which a platinum conductor track leading to the heater is electrically connected with using a ring contact.17. The bonding pad layer system as recited in claim 14 ,wherein at least one of the at least one bonding pad is situated in an area outside the contact hole on the semiconductor chip.18. A bonding pad layer system as ...

Semiconductor Device and Method of Manufacture

A semiconductor device including a test pad contact and a method of manufacturing the semiconductor device are disclosed. In an embodiment, a semiconductor device may include a first metal feature and a second metal feature disposed in a single top metal layer over a substrate. A test pad may be formed over and electrically connected to the first metal feature. A first passivation layer may be formed over the second metal feature and the test pad and may cover top and side surfaces of the test pad. A first via may be formed penetrating the first passivation layer and contacting the test pad and a second via may be formed penetrating the first passivation layer and contacting the second metal feature. 1. A semiconductor device comprising:a first conductive feature and a second conductive feature over a semiconductor substrate, wherein a top surface of the first conductive feature is level with a top surface of the second conductive feature;a test pad over and electrically connected to the first conductive feature;a bond layer over the test pad and the second conductive feature;a first bond pad extending through the bond layer and electrically connected to the test pad; anda second bond pad extending through the bond layer and electrically connected to the second conductive feature.2. The semiconductor device of claim 1 , further comprising a passivation layer between the bond layer and both the first conductive feature and the second conductive feature claim 1 , wherein the second bond pad extends through the passivation layer.3. The semiconductor device of claim 2 , further comprising a via extending through the passivation layer and electrically connecting the test pad to the first conductive feature.4. The semiconductor device of claim 1 , wherein the first conductive feature and the second conductive feature comprise a first conductive material claim 1 , and wherein the test pad comprises a second conductive material different from the first conductive material.5 ...

Redistribution Layer Metallic Structure and Method

The present disclosure provides an integrated circuit (IC) structure. The IC structure includes a semiconductor substrate; an interconnection structure formed on the semiconductor substrate; and a redistribution layer (RDL) metallic feature formed on the interconnection structure. The RDL metallic feature further includes a barrier layer disposed on the interconnection structure; a diffusion layer disposed on the barrier layer, wherein the diffusion layer includes metal and oxygen; and a metallic layer disposed on the diffusion layer. 1. A method of fabricating an integrated circuit (IC) structure , comprising:forming IC devices on a semiconductor substrate;forming an interconnection structure on the semiconductor substrate, wherein the interconnection structure includes a plurality of conductive features coupled with the IC devices;forming a first passivation layer on the interconnection structure, wherein the first passivation layer includes a first opening that exposes a top conductive feature of the plurality of the conductive features;depositing a barrier layer on the first passivation layer and on the top conductive feature within the first opening;performing an oxygen treatment to the barrier layer to form a diffusion layer;depositing a metallic layer on the diffusion layer;patterning the metallic layer, the diffusion layer and the barrier layer to form a redistribution layer (RDL) metallic feature; andforming a second passivation layer on the RDL metallic feature and the first passivation layer, wherein the RDL metallic feature is landing on the top conductive feature within the first opening and extends from the top conductive feature in the first opening to a second opening of the second passivation layer as a bonding pad, wherein the second opening is horizontally distanced away from the first opening.2. The method of claim 1 , wherein the depositing a metallic layer on the diffusion layer includes depositing an aluminum copper alloy by physical vapor ...

Semiconductor Device and Method for Producing a Semiconductor Device

A method for producing a semiconductor device includes: depositing a barrier layer on a first surface of a semiconductor body having active regions of a semiconductor device; forming a contact layer that at least partially covers the barrier layer, the barrier layer being configured to prevent a material of the contact layer from diffusing into the semiconductor body; forming a first passivation layer on the contact layer and on exposed surfaces of the barrier layer; in a first etching process, removing the first passivation layer from above the barrier layer so as to uncover sections of the barrier layer; and in a second etching process, removing at least some sections of the barrier layer uncovered by the first etching process

SEMICONDUCTOR DEVICE, MANUFACTURING METHOD, SOLID STATE IMAGE SENSOR, AND ELECTRONIC EQUIPMENT

Connection pads are formed in interlayer films provided respectively in interconnection layers of a sensor substrate on which a sensor surface having pixels is formed and a signal processing substrate configured to perform signal processing on the sensor substrate to make an electrical connection between the sensor substrate and the signal processing substrate. Then, a metal oxide film is formed between the interlayer films of the sensor substrate and the signal processing substrate, between the connection pad formed on a side toward the sensor substrate and the interlayer film on a side toward the signal processing substrate, and between the connection pad formed on the side toward the signal processing substrate and the interlayer film on the side toward the sensor substrate. The present technology can be applied to a laminated-type CMOS image sensor, for example. 111-. (canceled)12. A semiconductor device comprising:a sensor substrate including a photodiode, a transistor, and a first wiring layer; anda circuit substrate including a signal processing circuit and a second wiring layer, the sensor substrate being stacked on the circuit substrate,wherein the first wiring layer includes a first connection pad and a first insulating film,wherein the second wiring layer includes a second connection pad and a second insulating film,wherein a first portion of a first barrier metal contacts a first portion of the second connection pad,wherein a first portion of the first connection pad contacts a second portion of the second connection pad,wherein a second portion of the first connection pad contacts a first portion of a barrier film,wherein a second portion of the first barrier metal contacts a second portion of the barrier film, andwherein the first portion of the first barrier metal and the second portion of the first barrier metal are on opposite sides of the first connection pad.13. The semiconductor device according to claim 12 , wherein claim 12 , in a cross ...

Semiconductor device

According to one or more embodiments, a semiconductor device includes a first substrate and a second substrate. The first substrate includes a first metal layer and a first insulating layer. The first insulating layer surrounds the first metal layer. The second substrate includes a second metal layer, a second insulating layer, and a first conducive body. The second metal layer is in contact with the first metal layer. The second insulating layer surrounds the second metal layer and is in contact with the first insulating layer. A part of the first conductive body is in the second metal layer and extends in a first direction toward the first metal layer.

SOLID-STATE IMAGING DEVICE

Provided is a solid-state imaging device that suppresses propagation of a crack. There is provided a solid-state imaging device including: a first substrate on which a pixel unit configured to perform photoelectric conversion is formed; and a second substrate on which a logic circuit configured to process a pixel signal outputted from the pixel unit is formed, in which the first and second substrates are laminated by being connected by metal binding between wiring layers that are formed individually, an opening hole is formed on an outer periphery of the pixel unit to penetrate the first and second substrates to reach an upper part of a wire bonding pad formed in the second substrate, the second substrate includes an insulating layer below the wire bonding pad, and the insulating layer includes a first insulating film. 1. A solid-state imaging device comprising:a first substrate on which a pixel unit configured to perform photoelectric conversion is formed; anda second substrate on which a logic circuit configured to process a pixel signal outputted from the pixel unit is formed, whereinthe first and second substrates are laminated by being connected by metal binding between wiring layers that are formed individually,an opening hole is formed on an outer periphery of the pixel unit to penetrate the first and second substrates to reach an upper part of a wire bonding pad formed in the second substrate,the second substrate includes an insulating layer below the wire bonding pad, andthe insulating layer includes a first insulating film.2. The solid-state imaging device according to claim 1 , whereinthe insulating layer further includes a second insulating film,the insulating layer is configured by alternately laminating the first insulating film and the second insulating film in a downward direction,a part of the first insulating film is formed on the wire bonding pad side from a center of a length of the insulating layer in a downward direction, andhardness of the ...

Ball Amount Process in the Manufacturing of Integrated Circuit

An integrated circuit structure includes a semiconductor substrate, a metal pad over the semiconductor substrate, a passivation layer including a portion over the metal pad, a polymer layer over the passivation layer, and a Post-Passivation Interconnect (PPI) over the polymer layer. The PPI is electrically connected to the metal pad. The PPI includes a PPI line have a first width, and a PPI pad having a second width greater than the first width. The PPI pad is connected to the PPI line. The PPI pad includes an inner portion having a first thickness, and an edge portion having a second thickness smaller than the first thickness.

IMAGING DEVICE, MANUFACTURING METHOD, AND ELECTRONIC DEVICE

There is provided an imaging device including: a first semiconductor substrate () having a first region ( R) that includes a photoelectric conversion section () and a via portion (), a second region (R) adjacent to the first region, a connection portion () disposed at the second region, and a second semiconductor substrate (), wherein the connection portion electrically couples the first semiconductor substrate to the second semiconductor substrate in a stacked configuration, and wherein a width of the connection portion is greater than a width of the via portion. 1. An imaging device comprising:a first semiconductor substrate including:a first region having a photoelectric conversion section, anda via portion;a second region adjacent to the first region;a connection portion disposed at the second region; anda second semiconductor substrate,wherein the connection portion electrically couples the first semiconductor substrate to the second semiconductor substrate in a stacked configuration, and wherein a width of the connection portion is greater than a width of the via portion.2. The imaging device according to claim 1 , wherein the first semiconductor substrate further includes a wiring layer provided on a surface of the semiconductor substrate claim 1 , and the via penetrates the first semiconductor substrate and is connected to a wiring provided in the wiring layer.3. The imaging device according to claim 2 , wherein a cross-section area of a portion of the via connected to the wiring in the wiring layer is less than an area of the connection portion that electrically couples the first semiconductor substrate to the second semiconductor substrate.4. The imaging device according to claim 1 , wherein a total area of the second semiconductor substrate is less than a total area of the first semiconductor substrate.5. The imaging device according to claim 1 , wherein a length and width of the second semiconductor substrate is less than a respective length and width of ...

SILICON PHOTONIC INTERPOSER WITH TWO METAL REDISTRIBUTION LAYERS

A silicon integrated circuit. In some embodiments, the silicon integrated circuit includes a first conductive trace, on a top surface of the silicon integrated circuit, a dielectric layer, on the first conductive trace, and a second conductive trace, on the dielectric layer, connected to the first conductive trace through a first via. 1. A silicon integrated circuit , comprising:a first conductive trace, on a top surface of the silicon integrated circuit;a dielectric layer, on the first conductive trace; anda second conductive trace, on the dielectric layer, connected to the first conductive trace through a first via.2. The silicon integrated circuit of claim 1 , further comprising an under bump metallization capture pad claim 1 , on claim 1 , and connected to the first conductive trace through claim 1 , a second via.3. The silicon integrated circuit of claim 2 , wherein the under bump metallization capture pad comprises:a layer of nickel, and a layer of gold on the layer of nickel.4. The silicon integrated circuit of claim 1 , further comprising a wire bond pad claim 1 , on claim 1 , and connected to the first conductive trace through claim 1 , a second via.5. The silicon integrated circuit of claim 1 , wherein the first conductive trace is composed of a material selected from the group consisting of gold claim 1 , aluminum claim 1 , copper claim 1 , and alloys and combinations thereof.6. The silicon integrated circuit of claim 1 , wherein the second conductive trace is composed of a material selected from the group consisting of gold claim 1 , aluminum claim 1 , copper claim 1 , titanium claim 1 , tungsten claim 1 , tantalum claim 1 , and alloys and combinations thereof.7. The silicon integrated circuit of claim 6 , wherein the second conductive trace further comprises a layer of titanium tungsten.8. The silicon integrated circuit of claim 1 , wherein the dielectric layer is composed of a material selected from the group consisting of silicon dioxide claim 1 , ...

SELF-ALIGNED UNDER BUMP METAL

An integrated circuit including a self-aligned under bump metal pad formed on a top metal interconnect level in a connection opening in a dielectric layer, with a solder ball formed on the self-aligned under bump metal pad. Processes of forming integrated circuits including a self-aligned under bump metal pad formed on a top metal interconnect level in a connection opening in a dielectric layer, by a process of forming one or more metal layers on the interconnect level and the dielectric layer, selectively removing the metal from over the dielectric layer, and subsequently forming a solder ball on the self-aligned under bump metal pad. Some examples include additional metal layers formed after the selective removal process, and may include an additional selective removal process on the additional metal layers. 1. An integrated circuit , comprising:an interconnect region;a top interconnect level formed in the interconnect region, the top interconnect level including a connection pad;a dielectric layer formed over the top interconnect level, such that a portion of a top surface of the connection pad is exposed, while the dielectric layer overlaps a periphery of the connection pad, and such that a connection opening sidewall is formed at a boundary of the dielectric layer over the connection pad;a self-aligned under bump metal pad formed on the exposed portion of the top surface of the connection pad, such that the self-aligned under bump metal pad contacts the connection opening sidewall, and such that the self-aligned under bump metal pad does not contact a top surface of the dielectric layer; anda solder ball formed on a top surface of the self-aligned under bump metal pad.2. The integrated circuit of claim 1 , wherein the self-aligned under bump metal pad consists of a single layer of metal.3. The integrated circuit of claim 1 , wherein the self-aligned under bump metal pad includes:at least one of a metal adhesion sub-layer and a metal blocking sub-layer, wherein ...

Substrate, electronic device and display device having the same

A substrate includes a base substrate, and a pad at one side of the base substrate, wherein the pad comprises: a first conductive pattern on the base substrate, an insulating layer including a plurality of contact holes exposing a portion of the first conductive pattern, and second conductive patterns separately on the insulating layer and connected to the first conductive pattern through the plurality of contact holes, wherein side surfaces of the second conductive patterns are exposed.

Semiconductor element

A transistor includes a semiconductor region provided on a substrate and three different terminal electrodes. At least one terminal electrode has an isolated electrode structure composed of a plurality of conductor patterns. A bump, which electrically connects the plurality of conductor patterns to each other, is arranged on the terminal electrode having the isolated electrode structure. A stress-relaxing layer, which is composed of a metal material containing a high-melting-point metal, is arranged between the semiconductor region of the transistor and the bump. No current path for connecting the plurality of conductor patterns to each other is arranged between the conductor patterns and the bump.

SELF-ALIGNED UNDER BUMP METAL

An integrated circuit including a self-aligned under bump metal pad formed on a top metal interconnect level in a connection opening in a dielectric layer, with a solder ball formed on the self-aligned under bump metal pad. Processes of forming integrated circuits including a self-aligned under bump metal pad formed on a top metal interconnect level in a connection opening in a dielectric layer, by a process of forming one or more metal layers on the interconnect level and the dielectric layer, selectively removing the metal from over the dielectric layer, and subsequently forming a solder ball on the self-aligned under bump metal pad. Some examples include additional metal layers formed after the selective removal process, and may include an additional selective removal process on the additional metal layers. 1. An integrated circuit , comprising:an interconnect level in an interconnect region, the interconnect level including a connection pad;a dielectric layer over the interconnect level, such that the dielectric layer overlaps a periphery of the connection pad but not a center portion of the connection pad, and such that a connection opening sidewall is formed at an edge of the dielectric layer over the connection pad;an under bump metal pad on the center portion of the connection pad, such that the under bump metal pad contacts the connection opening sidewall, and such that the under bump metal pad does not extend over any portion of the dielectric layer; anda solder ball on the under bump metal pad, wherein the under bump metal pad includes:at least one of a metal adhesion sub-layer and a metal blocking sub-layer that is continuous along the connection opening sidewall, and is less than one-half as thick as the dielectric layer; anda solder connection sub-layer, wherein the solder connection sub-layer is at least one-half as thick as the dielectric layer.2. The integrated circuit of claim 1 , wherein the at least one of the metal adhesion sub-layer and the ...

Integrated circuits including copper pillar structures and methods for fabricating the same

Integrated circuits including copper pillar structures and methods for fabricating the same are disclosed. In one exemplary embodiment, an integrated circuit includes a last metal layer and a passivation layer disposed over the last metal layer, both the last metal and passivation layers being disposed over an integrated circuit active device on a semiconductor substrate. The integrated circuit further includes a copper pillar structure disposed partially within a first portion of the passivation layer and immediately over the last metal layer. The first portion of the passivation layer is defined by first and second sidewalls of the passivation layer and an upper surface of the last metal layer. The copper pillar structure includes a liner formed along the first and second sidewalls and over the upper surface of the last metal and a copper material within the liner. The copper pillar structure, including both the liner and the copper material within the liner, further extends to a height above an upper surface of the passivation layer.

Semiconductor package and method of manufacturing the same

A semiconductor package includes a substrate, a plurality of semiconductor devices stacked on the substrate, a plurality of underfill fillets disposed between the plurality of semiconductor devices and between the substrate and the plurality of semiconductor devices, and molding resin surrounding the plurality of semiconductor devices. At least one of the underfill fillets is exposed from side surfaces of the molding resin.

Packaging structure and fabrication method thereof

A packaging structure and a method for fabricating the packaging structure are provided. The packaging structure includes a base substrate including a solder pad body region and a trench region adjacent to and around the solder pad body region. The packaging structure also includes a passivation layer on a surface of the base substrate and exposing the solder pad body region and the trench region. In addition, the packaging structure includes a main body solder pad on the solder pad body region of the base substrate, and one or more trenches on the trench region of the base substrate and between the passivation layer and the main body solder pad. Further, the packaging structure includes a bonding conductive wire having one end connected to the main body solder pad.

PACKAGING ASSEMBLY AND METHOD OF MAKING THE SAME

A packaging assembly includes a semiconductor device. The semiconductor device includes a conductive pad having a first width, and an under-bump metallization (UBM) layer on the conductive pad, wherein the UBM layer has a second width greater than the first width. The semiconductor device further includes a conductive pillar on the UBM layer, and a cap layer over the conductive pillar, wherein the cap layer exposes sidewalls of the UBM layer. The packaging assembly further includes a substrate. The substrate includes a conductive region, and a mask layer overlying the substrate and exposing a portion of the conductive region. The packaging assembly further includes a joint solder structure between the conductive pillar and the conductive region. 1. A packaging assembly , comprising: a conductive pad having a first width,', 'an under-bump metallization (UBM) layer on the conductive pad, wherein the UBM layer has a second width greater than the first width,', 'a conductive pillar on the UBM layer, and', 'a cap layer over the conductive pillar, wherein the cap layer exposes sidewalls of the UBM layer;, 'a semiconductor device comprising a conductive region, and', 'a mask layer overlying the substrate and exposing a portion of the conductive region; and, 'a substrate comprisinga joint solder structure between the conductive pillar and the conductive region.2. The packaging assembly of claim 1 , wherein the mask layer has a mask opening exposing a portion of the conductive region claim 1 , and the width of the mask opening is smaller than and the second width.3. The packaging assembly of claim 2 , wherein a ratio between the width of the mask opening and the second width ranges from about 0.7 and about 0.8.4. The packaging assembly of claim 1 , wherein the conductive pillar comprises a copper pillar claim 1 , and the conductive region is a copper trace.5. The packaging assembly of claim 1 , wherein the mask layer is a solder resist layer.6. A packaging assembly claim 1 , ...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

According to one embodiment, semiconductor device includes a semiconductor layer, an electrode provided on the semiconductor layer, and a bonding wire connected to the electrode, wherein the electrode comprises a first metal layer containing copper, a second metal layer containing aluminum, provided between the first metal layer and the semiconductor layer, and a third metal layer provided between the first metal layer and the second metal layer, the third metal layer comprising a material different from those of the first metal layer and the second metal layer, and the thickness of the first metal layer is larger than the thickness of the second metal layer and larger than the thickness of the third metal layer. 1. A semiconductor device , comprising:a semiconductor layer;an electrode provided on the semiconductor layer; anda bonding wire connected to the electrode, whereinthe electrode comprises a first metal layer containing copper, a second metal layer containing aluminum and between the first metal layer and the semiconductor layer, and a third metal layer between the first metal layer and the second metal layer, the third metal layer comprising a material different from those of the first metal layer and the second metal layer, andthe thickness of the first metal layer is greater than the thickness of the second metal layer and greater than the thickness of the third metal layer.2. The semiconductor device according to claim 1 , wherein the third metal layer contains at least one metal element selected from the group consisting of titanium claim 1 , tungsten claim 1 , and tantalum.3. The semiconductor device according to claim 1 , wherein the third metal layer contains at least one material selected from the group consisting of titanium claim 1 , tungsten claim 1 , tantalum claim 1 , titanium nitride claim 1 , tungsten nitride claim 1 , tantalum nitride claim 1 , and a titanium/tungsten alloy.4. The semiconductor device according to claim 1 , wherein the ...

Integrated Circuit Structure Having Dies with Connectors

An embodiment is an integrated circuit structure including a first die having a bump structure, and a second die having a pad structure. The first die is attached to the second die by bonding the bump structure and the pad structure. The bump structure includes a metal pillar, a metal cap layer on the metal pillar, a metal insertion layer on the metal cap layer, and a solder layer on the metal insertion layer. The pad structure includes at least one of a nickel (Ni) layer, a palladium (Pd) layer or a gold (Au) layer.

Semiconductor device and method of manufacturing the same

An imaging device includes a first semiconductor element including at least one bump pad that has a concave shape. The at least one bump pad includes a first metal layer and a second metal layer on the first metal layer. The imaging device includes a second semiconductor element including at least one electrode. The imaging device includes a microbump electrically connecting the at least one bump pad to the at least one electrode. The microbump includes a diffused portion of the second metal layer, and first semiconductor element or the second semiconductor element includes a pixel unit.

LIGHT EMITTING DIODE CONTAINING A GRATING AND METHODS OF MAKING THE SAME

A light emitting diode (LED) includes a n-doped semiconductor material layer, a p-doped semiconductor material layer, an active region disposed between the n-doped semiconductor layer and the p-doped semiconductor layer, and a photonic crystal grating configured to increase the light extraction efficiency of the LED. 1. A light emitting diode (LED) , comprising:a n-doped semiconductor material layer;a p-doped semiconductor material layer;an active region disposed between the n-doped semiconductor layer and the p-doped semiconductor layer; and{'b': '100', 'a photonic crystal grating configured to increase the light extraction efficiency of the LED, wherein the LED has a width of microns or less.'}2. The LED of claim 1 , wherein the grating comprises nanostructures configured to guide the light emitted from the active region in a direction substantially perpendicular to a plane of the active region.3. The LED of claim 2 , further comprising:a reflector; anda transparent conductive oxide anode contact located between the reflector and the p-type semiconductor layer,wherein the nanostructures are located between the reflector and the p-type semiconductor material layer.4. The LED of claim 3 , wherein the nanostructures are located in the transparent conductive oxide anode contact.5. The LED of claim 2 , wherein the nanostructures are located between the n-doped semiconductor material layer and the active region.6. The LED of claim 2 , further comprising a buffer semiconductor layer claim 2 , wherein the n-doped semiconductor material layer is located between the active region and the buffer semiconductor layer.7. The LED of claim 6 , wherein the nanostructures are located on a lower surface of the buffer semiconductor layer opposite to an upper surface facing the active region.8. The LED of claim 6 , wherein the nanostructures are located in the buffer semiconductor layer.9. The LED of claim 6 , wherein the nanostructures are located in the n-doped semiconductor ...

Low-Temperature Bonding With Spaced Nanorods And Eutectic Alloys

Bonded surfaces are formed by adhering first nanorods and second nanorods to respective first and second surfaces. The first shell is formed on the first nanorods and the second shell is formed on the second nanorods, wherein at least one of the first nanorods and second nanorods, and the first shell and the second shell are formed of distinct metals. The surfaces are then exposed to at least one condition that causes the distinct metals to form an alloy, such as eutectic alloy having a melting point below the temperature at which the alloy is formed, thereby bonding the surfaces upon which solidification of the alloy.

SEMICONDUCTOR DEVICE, MANUFACTURING METHOD, SOLID STATE IMAGE SENSOR, AND ELECTRONIC EQUIPMENT

The present disclosure relates to a semiconductor device, a manufacturing method, a solid state image sensor, and electronic equipment that can achieve further improvement in reliability. Connection pads are formed in interlayer films provided respectively in interconnection layers of a sensor substrate on which a sensor surface having pixels is formed and a signal processing substrate configured to perform signal processing on the sensor substrate to make an electrical connection between the sensor substrate and the signal processing substrate. Then, a metal oxide film is formed between the interlayer films of the sensor substrate and the signal processing substrate, between the connection pad formed on a side toward the sensor substrate and the interlayer film on a side toward the signal processing substrate, and between the connection pad formed on the side toward the signal processing substrate and the interlayer film on the side toward the sensor substrate. The present technology can be applied to a laminated-type CMOS image sensor, for example. 1. A semiconductor device comprising:connection pads formed in interlayer films provided respectively in interconnection layers of a first semiconductor substrate and a second semiconductor substrate to make an electrical connection between the first semiconductor substrate and the second semiconductor substrate; anda metal oxide film formed between the interlayer films of the first semiconductor substrate and the second semiconductor substrate, between the connection pad formed on a side toward the first semiconductor substrate and the interlayer film on a side toward the second semiconductor substrate, and between the connection pad formed on the side toward the second semiconductor substrate and the interlayer film on the side toward the first semiconductor substrate.2. The semiconductor device according to claim 1 , whereina metal film is formed on at least one bonding surface of a bonding surface including the ...

System and Method to Enhance Solder Joint Reliability

A reliability cover that is disposed over at least one of an integrated circuit package and a Si die of the integrated circuit package is disclosed. The integrated circuit package is mountable to a printed circuit board via a plurality of solder balls. The reliability cover is configured to reduce a difference in a coefficient of thermal expansion between the integrated circuit package and the printed circuit board, and between the Si die and a substrate of the integrated circuit package by a threshold value. 1. A system comprising:a reliability cover disposed over at least one of an integrated circuit package and a Si die of the integrated circuit package, wherein the integrated circuit package is mountable to a printed circuit board via a plurality of solder balls, andwherein the reliability cover is configured to reduce a difference in a coefficient of thermal expansion between the integrated circuit package and the printed circuit board, and between the Si die and a substrate of the integrated circuit package by a threshold value.2. The system of claim 1 , wherein the reliability cover is deposited as a film.3. The system of claim 1 , wherein the reliability cover is configured as a mechanical lid.4. The system of claim 1 , wherein the reliability cover is disposed along at least a portion of a perimeter of a top surface of the at least one of the integrated circuit package and the Si die of the integrated circuit package.5. The system of claim 1 , wherein the reliability cover is disposed at one or more corners of a top surface of the at least one of the integrated circuit package and the Si die of the integrated circuit package.6. The system of claim 1 , wherein the reliability cover is disposed over areas of the integrated circuit package that correspond to a failure profile of solder joints formed between the plurality of solder balls and the integrated circuit package and between the plurality of solder balls and the printed circuit board.7. The system of ...

Diffusion barrier collar for interconnects

Representative implementations of techniques and devices are used to reduce or prevent conductive material diffusion into insulating or dielectric material of bonded substrates. Misaligned conductive structures can come into direct contact with a dielectric portion of the substrates due to overlap, especially while employing direct bonding techniques. A barrier interface that can inhibit the diffusion is disposed generally between the conductive material and the dielectric at the overlap.

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

The method of manufacturing a semiconductor device includes receiving a substrate. The substrate comprises at least one chip region and at least one scribe line next to the chip region, and each chip region comprises an active region. The method further includes disposing a buffer layer at least covering the scribe line, disposing a dielectric layer including an opening over each chip region, and disposing a bump material to the opening of the dielectric layer and electrically connecting to the active region. The method further includes forming a mold over the substrate, covering the buffer layer and cutting the substrate along the scribe line. Furthermore, the buffer layer includes an elastic modulus less than that of the mold, or the buffer layer includes a coefficient of thermal expansion less than that of the mold. 1. A method of manufacturing a semiconductor device , comprising:receiving a substrate, wherein the substrate comprises at least one chip region and at least one scribe line next to the chip region, and each chip region comprises an active region;disposing a buffer layer at least covering the scribe line;disposing a dielectric layer including an opening over each chip region;disposing a bump material to the opening of the dielectric layer and electrically connecting to the active region;forming a mold over the substrate and covering the buffer layer, wherein the buffer layer includes an elastic modulus less than that of the mold, or the buffer layer includes a coefficient of thermal expansion less than that of the mold; andcutting the substrate along the scribe line.2. The method of claim 1 , wherein each chip region includes a guard structure region and the buffer layer partially overlies the guard structure region.3. The method of claim 1 , wherein the disposing of a buffer layer is simultaneously occurring with the disposing of a dielectric layer.4. The method of claim 1 , wherein the dielectric layer is distant from the buffer layer by a gap of ...

Semiconductor device having under-bump metallization (ubm) structure and method of forming the same

A semiconductor device comprises a semiconductor substrate, an under-bump metallization (UBM) structure overlying the semiconductor substrate, and a solder bump overlying and electrically connected to the UBM structure. The UBM structure comprises a first metallization layer comprising a first metal, a second metallization layer comprising a second metal different from the first metal, and a first intermetallic compound (IMC) layer between the first metallization layer and the second metallization layer, the first IMC layer comprising the first metal and the second metal.

Method for Forming Interconnect Structure

An apparatus includes a plurality of interconnect structures over a substrate, a dielectric layer formed over a top metal line of the plurality of interconnect structures, a first barrier layer on a bottom and sidewalls of an opening in the dielectric layer, wherein the first barrier layer is formed of a first material and has a first thickness, a second barrier layer over the first barrier layer, wherein the second barrier layer is formed of a second material different from the first material and has a second thickness and a pad over the second barrier layer, wherein the pad is formed of a third material.

Integrated circuit chip, integrated circuit package and display apparatus including the integrated circuit chip

An integrated circuit chip includes an SOI substrate having a structure in which a bulk substrate, a buried insulating film, and a semiconductor body layer are sequentially stacked, a conductive ion implantation region formed at a position adjacent to the buried insulating film in the bulk substrate, an integrated circuit portion formed on an active surface of the semiconductor body layer, and a penetrating electrode portion arranged at a position spaced apart from the integrated circuit portion in a horizontal direction, the penetrating electrode portion penetrating the semiconductor body layer and the buried insulating layer in a vertical direction, and the penetrating electrode portion connected to the conductive ion implantation region. An integrated circuit package and a display device include the integrated circuit chip.

SEMICONDUCTOR DEVICE, MANUFACTURING METHOD, SOLID STATE IMAGE SENSOR, AND ELECTRONIC EQUIPMENT

The present disclosure relates to a semiconductor device, a manufacturing method, a solid state image sensor, and electronic equipment that can achieve further improvement in reliability. Connection pads are formed in interlayer films provided respectively in interconnection layers of a sensor substrate on which a sensor surface having pixels is formed and a signal processing substrate configured to perform signal processing on the sensor substrate to make an electrical connection between the sensor substrate and the signal processing substrate. Then, a metal oxide film is formed between the interlayer films of the sensor substrate and the signal processing substrate, between the connection pad formed on a side toward the sensor substrate and the interlayer film on a side toward the signal processing substrate, and between the connection pad formed on the side toward the signal processing substrate and the interlayer film on the side toward the sensor substrate. The present technology can be applied to a laminated-type CMOS image sensor, for example. 111-. (canceled)12. A semiconductor device comprising:a sensor substrate including a photodiode, a transistor, and a first wiring layer; anda circuit substrate including a signal processing circuit and a second wiring layer, the sensor substrate being stacked on the circuit substrate,wherein the first wiring layer includes a first connection pad and a first insulating film,wherein the second wiring layer includes a second connection pad and a second insulating film,wherein the first connection pad and the second connection pad are disposed in a peripheral region other than a pixel region that includes the photodiode,wherein a first portion of a first barrier metal contacts a first portion of the second connection pad,wherein a first portion of the first connection pad contacts a second portion of the second connection pad,wherein a second portion of the first connection pad contacts a first portion of a barrier film, ...

Semiconductor package and method of manufacturing the same

A method of manufacturing a semiconductor package including coating a flux on a connection pad provided on a first surface of a substrate, the flux including carbon nanotubes (CNTs), placing a solder ball on the connection pad coated with the flux, forming a solder layer attached to the connection pad from the solder ball through a reflow process, and mounting a semiconductor chip on the substrate such that the solder layer faces a connection pad in the semiconductor chip may be provided.

THREE-DIMENSIONAL INTEGRATED CIRCUIT AND METHOD OF MANUFACTURING THE SAME

Provided are a three-dimensional integrated circuit (3DIC) and a method of manufacturing the same. The 3DIC includes a first wafer, a second wafer, and a hybrid bonding structure. The second wafer is bonded to the first wafer by the hybrid bonding structure. The hybrid bonding structure includes a blocking layer between a hybrid bonding dielectric layer and a hybrid bonding metal layer. 1. A three-dimensional integrated circuit (3DIC) , comprising:a first wafer; anda second wafer, bonded to the first wafer by a hybrid bonding structure, wherein the hybrid bonding structure comprises a blocking layer disposed between a hybrid bonding dielectric layer and a hybrid bonding metal layer.2. The 3DIC of claim 1 , wherein a material of the blocking layer is from the hybrid bonding dielectric layer and the hybrid bonding metal layer claim 1 , and the blocking layer is in direct contact with the hybrid bonding dielectric layer and the hybrid bonding metal layer.3. The 3DIC of claim 1 , wherein the blocking layer comprises manganese oxide (MnO) claim 1 , manganese silicate (MnSiO) claim 1 , manganese oxynitride (MnON) claim 1 , cobalt oxide (CoO) claim 1 , or a combination thereof.4. The 3DIC of claim 1 , wherein a thickness of the blocking layer is between 0.5 nm and 1.0 nm.5. The 3DIC of claim 1 , wherein the hybrid bonding structure comprises:a first portion, comprising a first bonding metal layer and a second bonding metal layer bonding to each other;a second portion, comprising a first bonding dielectric layer and a second bonding dielectric layer bonding to each other; anda third portion, comprising the first bonding metal layer and the second bonding dielectric layer bonding to each other, the first bonding dielectric layer and the second bonding metal layer bonding to each other, and the blocking layer disposed between the first bonding metal layer and the second bonding dielectric layer and disposed between the first bonding dielectric layer and the second bonding ...

Semiconductor Device and Method

In an embodiment, a device includes: a first reflective structure including first doped layers of a semiconductive material, alternating ones of the first doped layers being doped with a p-type dopant; a second reflective structure including second doped layers of the semiconductive material, alternating ones of the second doped layers being doped with a n-type dopant; an emitting semiconductor region disposed between the first reflective structure and the second reflective structure; a contact pad on the second reflective structure, a work function of the contact pad being less than a work function of the second reflective structure; a bonding layer on the contact pad, a work function of the bonding layer being greater than the work function of the second reflective structure; and a conductive connector on the bonding layer.