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  • Method for forming a semiconductor device having a structure of a single crystal scandium oxide film formed on a silicon substrate

Method for forming a semiconductor device having a structure of a single crystal scandium oxide film formed on a silicon substrate

Номер патента: US7235467B2
Опубликовано: 26-06-2007
Автор(ы): Chih-Ping Chen, Jueinai Kwo, Ming-Hwei Hong, Shiang-Pi Chang, Wei-Chin Lee
Принадлежит: National Tsing Hua University NTHU
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Номер патента: US09911662B2. Автор: Kangguo Cheng,Pouya Hashemi,Alexander Reznicek,Ali Khakifirooz. Владелец: International Business Machines Corp. Дата публикации: 2018-03-06.

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Номер патента: US09892978B2. Автор: Kangguo Cheng,Pouya Hashemi,Alexander Reznicek,Ali Khakifirooz. Владелец: International Business Machines Corp. Дата публикации: 2018-02-13.

Forming a CMOS with dual strained channels

Номер патента: US09564373B2. Автор: Kangguo Cheng,Pouya Hashemi,Alexander Reznicek,Ali Khakifirooz. Владелец: International Business Machines Corp. Дата публикации: 2017-02-07.

Method for forming semiconductor device

Номер патента: US20230091153A1. Автор: Chia-Ming Kuo,Chia-Wei Chang,Chia-Yuan Chang,Yu-Ren Wang,Shao-Wei Wang,Fu-Jung Chuang,Po-Jen Chuang. Владелец: United Microelectronics Corp. Дата публикации: 2023-03-23.

Forming arsenide-based complementary logic on a single substrate

Номер патента: US09991172B2. Автор: Jack T. Kavalieros,Suman Datta,Marko Radosavljevic,Mantu K. Hudait. Владелец: Intel Corp. Дата публикации: 2018-06-05.

Semiconductor Devices Having Epitaxial Layers with Suppressed Lateral Growth and Related Methods of Manufacturing Such Devices

Номер патента: US20070072399A1. Автор: Jun-Ho Lee,Young-Pil Kim,Hyung-ik Lee,Jin-Bum Kim,Hion-suck Baik. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2007-03-29.

Nitride semiconductor substrate and method for producing same

Номер патента: EP4442868A1. Автор: Kosei Sugawara,Keitaro Tsuchiya,Kazunori Hagimoto,Keisuke Mihara,Ippei Kubono. Владелец: Shin Etsu Handotai Co Ltd. Дата публикации: 2024-10-09.

Method for manufacturing semiconductor device

Номер патента: US09905703B2. Автор: Shunpei Yamazaki. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2018-02-27.

Method for manufacturing semiconductor device

Номер патента: US09349593B2. Автор: Shunpei Yamazaki. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2016-05-24.

Method for forming crystalline deposited film

Номер патента: CA1329756C. Автор: Yutaka Hirai. Владелец: Canon Inc. Дата публикации: 1994-05-24.

Method for manufacturing semiconductor device

Номер патента: US20140370445A1. Автор: Hideaki Yuki,Sunao Aya,Shozo Shikama. Владелец: Mitsubishi Electric Corp. Дата публикации: 2014-12-18.

Method for producing group iii nitride semiconductor light-emitting device

Номер патента: US20160247962A1. Автор: Koji Okuno. Владелец: Toyoda Gosei Co Ltd. Дата публикации: 2016-08-25.

Method for producing group III nitride semiconductor light-emitting device

Номер патента: US09496453B2. Автор: Koji Okuno. Владелец: Toyoda Gosei Co Ltd. Дата публикации: 2016-11-15.

Method of forming an epitaxial semiconductor layer in a recess and a semiconductor device having the same

Номер патента: US20160079362A1. Автор: Chun Hsiung Tsai,Tsz-Mei Kwok. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-03-17.

Method of forming an epitaxial semiconductor layer in a recess and a semiconductor device having the same

Номер патента: US09525026B2. Автор: Chun Hsiung Tsai,Tsz-Mei Kwok. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-12-20.

Semiconductor device and method for manufacturing same

Номер патента: US20030010980A1. Автор: Shunpei Yamazaki,Toru Mitsuki,Kenji Kasahara. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2003-01-16.

Silicon carbide semiconductor device and method for manufacturing same

Номер патента: US20120126250A1. Автор: Hideto Tamaso. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2012-05-24.

Silicon carbide semiconductor device and method for manufacturing same

Номер патента: US20140170841A1. Автор: Hideto Tamaso. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2014-06-19.

Method of manufacturing a semiconductor device

Номер патента: US6461796B1. Автор: Tatsuya Kunikiyo. Владелец: Mitsubishi Electric Corp. Дата публикации: 2002-10-08.

Semiconductor device and method for forming the same

Номер патента: US20240194769A1. Автор: Yu-Cheng Tung,Chia-Wei Wu. Владелец: Fujian Jinhua Integrated Circuit Co Ltd. Дата публикации: 2024-06-13.

Method for fabricating diamond films and related structures

Номер патента: WO1995009434A1. Автор: Jeffrey Taylor Glass,Peter Thomas Goeller,Denise Tucker Simendinger. Владелец: North Carolina State University. Дата публикации: 1995-04-06.

Method of Manufacturing a Semiconductor Device Having an Integrated pn Diode Temperature Sensor

Номер патента: US20200006185A1. Автор: Mark Harrison,Georg SCHINNER. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2020-01-02.

Method for reducing charging of semiconductor wafers

Номер патента: US11769662B2. Автор: Ching-Sen Kuo,Chien-Hung Lin,Feng-Jia Shiu,Chih-Chien Wang,Chun-Chang Chen,Wei-Lin Chang,Chihy-Yuan Cheng,Sz-Fan Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-09-26.

Self-aligned formation and method for semiconductors

Номер патента: US6165896A. Автор: Rainer F. Schnabel,Zhijian Lu,Jeffrey Gambino. Владелец: SIEMENS AG. Дата публикации: 2000-12-26.

Method for manufacturing a laterally limited, single-crystal region on a substrate and the employment thereof for the manufacture of an MOS transistor and a bipolar transistor

Номер патента: US5498567A. Автор: Thomas Meister,Reinhard Stengl,Hans-Willi Meul,Helmut Klose. Владелец: SIEMENS AG. Дата публикации: 1996-03-12.

Method for forming semiconductor device

Номер патента: US11876122B2. Автор: Chia-Ming Kuo,Chia-Wei Chang,Chia-Yuan Chang,Yu-Ren Wang,Shao-Wei Wang,Fu-Jung Chuang,Po-Jen Chuang. Владелец: United Microelectronics Corp. Дата публикации: 2024-01-16.

Methods for thermal treatment of a semiconductor layer in semiconductor device

Номер патента: US20230138575A1. Автор: LEI Liu,Zhiliang Xia,Kun Zhang,Wenxi Zhou,Yuancheng YANG. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-05-04.

Cleaning agent composition for substrate for semiconductor devices and method for cleaning substrate for semiconductor devices using the same

Номер патента: US20240150681A1. Автор: Myungho Lee,Hye Ji KIM,Young Mee Kang,Yu Jin HEO,Jinho You,Hag Sung LEE,Narae YIM,Keon young KIM,Yun sun CHOI. Владелец: ENF Technology CO Ltd. Дата публикации: 2024-05-09.

Method of manufacturing a semiconductor device

Номер патента: US09805980B2. Автор: Tadashi Munakata,Noriyuki Takahashi,Yoshihiko Yamaguchi,Shingo Oosaka,Mitsuru Kinoshita. Владелец: Renesas Electronics Corp. Дата публикации: 2017-10-31.

Method for manufacturing semiconductor device

Номер патента: US20160254387A1. Автор: Shunpei Yamazaki. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2016-09-01.

Photolithographic method for forming a coating layer

Номер патента: US09633834B2. Автор: Guowei Zhang. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2017-04-25.

Nitride semiconductor substrate and method for producing same

Номер патента: EP4354489A1. Автор: Masaru Shinomiya,Kazunori Hagimoto,Ippei Kubono. Владелец: Shin Etsu Handotai Co Ltd. Дата публикации: 2024-04-17.

Crystalline silicon semiconductor device and method for fabricating same

Номер патента: US6777714B2. Автор: Susumu Takahashi,Shinichi Muramatsu,Yasushi Minagawa,Fumihito Oka,Yoshiaki Yazawa. Владелец: Hitachi Cable Ltd. Дата публикации: 2004-08-17.

Method for forming patterns in a semiconductor device

Номер патента: TW200406030A. Автор: Jae-Chang Jung,Cheol-Kyu Bok,Ki-Soo Shin,Sung-koo Lee,Young-sun Hwang. Владелец: Hynix Semiconductor Inc. Дата публикации: 2004-04-16.

Method for forming patterns in a semiconductor device

Номер патента: TWI281209B. Автор: Jae-Chang Jung,Cheol-Kyu Bok,Ki-Soo Shin,Sung-koo Lee,Young-sun Hwang. Владелец: Hynix Semiconductor Inc. Дата публикации: 2007-05-11.

Semiconductor element and production method for same

Номер патента: US20170288061A1. Автор: Kohei Sasaki,Masataka Higashiwaki,Man Hoi Wong. Владелец: Tamura Corp. Дата публикации: 2017-10-05.

Method for cleaning semiconductor wafers

Номер патента: US11752529B2. Автор: Xi Wang,HUI Wang,Jun Wang,Jian Wang,Yinuo JIN,Zhaowei Jia,Xiaoyan Zhang,Xuejun Li,Fuping CHEN,Liangzhi Xie,Fufa Chen. Владелец: ACM Research Shanghai Inc. Дата публикации: 2023-09-12.

Semiconductor element, method for manufacturing same, and semiconductor integrated circuit

Номер патента: US09711597B2. Автор: Takahiro Mori. Владелец: National Institute of Advanced Industrial Science and Technology AIST. Дата публикации: 2017-07-18.

Methods for Forming a Plurality of Semiconductor Devices on a Plurality of Semiconductor Wafers

Номер патента: US20160359014A1. Автор: Jochen Hilsenbeck,Jens Peter Konrath. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2016-12-08.

Methods for Forming a Plurality of Semiconductor Devices on a Plurality of Semiconductor Wafers

Номер патента: US20180122918A1. Автор: Jochen Hilsenbeck,Jens Peter Konrath. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2018-05-03.

Methods for forming a plurality of semiconductor devices on a plurality of semiconductor wafers

Номер патента: US09859396B2. Автор: Jochen Hilsenbeck,Jens Peter Konrath. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2018-01-02.

Contact method for thin silicon carbide epitaxial layer and semiconductor devices formed by those methods

Номер патента: US20070117366A1. Автор: Martin Kordesch,Howard Bartlow,Richard Woodin. Владелец: Individual. Дата публикации: 2007-05-24.

Contact method for thin silicon carbide epitaxial layer and semiconductor devices formed by those methods

Номер патента: WO2003023860A1. Автор: Howard D. Bartlow,Martin E. Kordesch,Richard. L. Woodin. Владелец: Fairchild Semiconductor Corporation. Дата публикации: 2003-03-20.

Contact method for thin silicon carbide epitaxial layer and semiconductor devices formed by those methods

Номер патента: EP1412985A1. Автор: Howard D. Bartlow,Martin E. Kordesch,Richard. L. Woodin. Владелец: Fairchild Semiconductor Corp. Дата публикации: 2004-04-28.

Contact method for thin silicon carbide epitaxial layer and semiconductor devices formed by those methods

Номер патента: EP1412985A4. Автор: Richard L Woodin,Howard D Bartlow,Martin E Kordesch. Владелец: Fairchild Semiconductor Corp. Дата публикации: 2008-11-26.

Method for forming interlayer insulation film in semiconductor device

Номер патента: US20050142848A1. Автор: Kang Shin,Sang Ryu. Владелец: Individual. Дата публикации: 2005-06-30.

Method for forming interlayer insulation film in semiconductor device

Номер патента: US7160810B2. Автор: Sang Wook Ryu,Kang Sup Shin. Владелец: Hynix Semiconductor Inc. Дата публикации: 2007-01-09.

Method for processing workpiece, plasma processing apparatus and semiconductor device

Номер патента: US12009220B2. Автор: FEI Yu,Junliang Li,Mengyang Xin. Владелец: Beijing E Town Semiconductor Technology Co Ltd. Дата публикации: 2024-06-11.

Method for processing workpiece, plasma processing apparatus and semiconductor device

Номер патента: US20240355634A1. Автор: FEI Yu,Junliang Li,Mengyang Xin. Владелец: Beijing E Town Semiconductor Technology Co Ltd. Дата публикации: 2024-10-24.

Methods for forming dielectric layer in forming semiconductor device

Номер патента: US12080560B2. Автор: Xiaohong Zhou,Yonggang YANG. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-09-03.

Method for processing workpiece, plasma processing apparatus and semiconductor device

Номер патента: US20230005752A1. Автор: FEI Yu,Junliang Li,Mengyang Xin. Владелец: Beijing E Town Semiconductor Technology Co Ltd. Дата публикации: 2023-01-05.

Method of manufacturing a silicon carbide semiconductor device including forming a protective film with a 2-layer structure comprised of silicon and carbon

Номер патента: US09748149B2. Автор: Yasuyuki Kawada. Владелец: Fuji Electric Co Ltd. Дата публикации: 2017-08-29.

Method for forming a line of semiconductor device

Номер патента: US20020090807A1. Автор: Tae Kwon. Владелец: Hynix Semiconductor Inc. Дата публикации: 2002-07-11.

Method for forming a line of semiconductor device

Номер патента: US6548377B2. Автор: Tae Seok Kwon. Владелец: Hynix Semiconductor Inc. Дата публикации: 2003-04-15.

Methods for producing a cavity within a semiconductor substrate

Номер патента: US09708182B2. Автор: Bernhard WINKLER,Martin Zgaga,Sokratis Sgouridis,Andreas Behrendt,Kai-Alexander Schreiber. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2017-07-18.

Method of fabricating a semiconductor on insulator device having a frontside substrate contact

Номер патента: US20100163993A1. Автор: Piebe A. Zijlstra. Владелец: NXP BV. Дата публикации: 2010-07-01.

Method for trapping implant damage in a semiconductor substrate

Номер патента: EP2208220A1. Автор: Dipankar Pramanik,Victor Moroz. Владелец: Synopsys Inc. Дата публикации: 2010-07-21.

Method for trapping implant damage in a semiconductor substrate

Номер патента: WO2009058450A1. Автор: Dipankar Pramanik,Victor Moroz. Владелец: Synopsys, Inc.. Дата публикации: 2009-05-07.

Method for suppressing lattice defects in a semiconductor substrate

Номер патента: US09472423B2. Автор: Dipankar Pramanik,Victor Moroz. Владелец: Synopsys Inc. Дата публикации: 2016-10-18.

Method of Forming a Super Junction Semiconductor Device Having Stripe-Shaped Regions of the Opposite Conductivity Types

Номер патента: US20160104768A1. Автор: Markus Schmitt,Hans Weber,Rolf Weis,Franz Hirler,Armin Willmeroth,Thomas Wahls. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2016-04-14.

Method of forming a super junction semiconductor device having stripe-shaped regions of the opposite conductivity types

Номер патента: US09484400B2. Автор: Markus Schmitt,Hans Weber,Rolf Weis,Franz Hirler,Armin Willmeroth,Thomas Wahls. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2016-11-01.

Method for fabricating CMOS compatible contact layers in semiconductor devices

Номер патента: US09698309B2. Автор: Celso Cavaco,Brice De Jaeger,Marleen Van Hove,Vasyl Motsnyi. Владелец: Interuniversitair Microelektronica Centrum vzw IMEC. Дата публикации: 2017-07-04.

Methods for producing a cavity within a semiconductor substrate

Номер патента: US20150368097A1. Автор: Bernhard WINKLER,Martin Zgaga,Sokratis Sgouridis,Andreas Behrendt,Kai-Alexander Schreiber. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2015-12-24.

Method for etching a compound semiconductor, a semiconductor laser device and method for producing the same

Номер патента: US6127201A. Автор: Toyoji Chino,Isao Kidoguchi,Hideto Adachi,Yasuhito Kumabuchi. Владелец: Matsushita Electric Industrial Co Ltd. Дата публикации: 2000-10-03.

Method for quantitating impurity concentration in a semiconductor device

Номер патента: US6130542A. Автор: Toshiyuki Syo. Владелец: NEC Corp. Дата публикации: 2000-10-10.

Semiconductor device and method of manufacturing semiconductor device

Номер патента: US20200235201A1. Автор: Syunki Narita. Владелец: Fuji Electric Co Ltd. Дата публикации: 2020-07-23.

Silicon-carbide semiconductor device and method for manufacturing the same

Номер патента: US09425261B2. Автор: Yutaka Fukui,Yuji Abe,Yasuhiro Kagawa,Masayuki Imaizumi,Rina Tanaka. Владелец: Mitsubishi Electric Corp. Дата публикации: 2016-08-23.

Process for manufacturing a power electronic device having a current spreading layer

Номер патента: US20240297043A1. Автор: Cateno Marco Camalleri,Mario Giuseppe Saggio,Edoardo Zanetti,Laura Letizia SCALIA,Massimo Boscaglia,Alfio Guarnera,Mario Pietro BERTOLINI,Massimiliano CANTIANO. Владелец: STMicroelectronics International NV. Дата публикации: 2024-09-05.

Method for depositing a conductive carbon material on a semiconductor for forming a Schottky contact and semiconductor contact device

Номер патента: US20070010094A1. Автор: Franz Kreupl,Gernot Steinlesberger. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2007-01-11.

Method for forming narrow structures in a semiconductor device

Номер патента: WO2007037934A1. Автор: Michael Brennan,Scott Bell. Владелец: SPANSION LLC. Дата публикации: 2007-04-05.

Method for the insulation of polysilicon film in semiconductor device

Номер патента: US5376576A. Автор: Sang H. Park,Chang S. Moon,Dae I. Park. Владелец: Hyundai Electronics Industries Co Ltd. Дата публикации: 1994-12-27.

Method for forming align key pattern in semiconductor device

Номер патента: US5578519A. Автор: Yun-hee Cho. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 1996-11-26.

Method for forming buried word line in semiconductor device

Номер патента: US20110027988A1. Автор: Sun-Hwan Hwang,Se-Aug Jang,Kee-Joon Oh,Soon-Young Park. Владелец: Hynix Semiconductor Inc. Дата публикации: 2011-02-03.

Compound semiconductor device, method for producing same, and resin-sealed type semiconductor device

Номер патента: US09865679B2. Автор: Hideki Mizuhara,Yoshihiro Matsushima,Shinichi Oohashi. Владелец: Panasonic Intellectual Property Management Co Ltd. Дата публикации: 2018-01-09.

A method for forming rectangular-shape spacers for semiconductor devices

Номер патента: WO2005069362A1. Автор: Huicai Zhong,Srikanteswara Dakshina-Murthy. Владелец: Advanced Micro Devices, Inc.. Дата публикации: 2005-07-28.

Method for forming improved liner layer and semiconductor device including the same

Номер патента: US09859157B1. Автор: Chih-Chao Yang,Conal E. Murray. Владелец: International Business Machines Corp. Дата публикации: 2018-01-02.

Method for forming interlayer dielectric film for semiconductor device by using polyhedral molecular silsesquioxane

Номер патента: US7470634B2. Автор: Hyeon Jin Shin,Hyun Dam Jeong. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2008-12-30.

Method for forming mark, packaging method of semiconductor device, and semiconductor device having the mark

Номер патента: US20240178152A1. Автор: Hao-Yi Tsai,Po-Yuan TENG,Shih-Wei Chen,Chiahung Liu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-05-30.

Method for forming non-amorphous, ultra-thin semiconductor devices using sacrificial implantation layer

Номер патента: EP1695381A4. Автор: Paul Ronsheim,Omer H Dokumaci. Владелец: International Business Machines Corp. Дата публикации: 2008-09-17.

Methods for manufacturing shallow trench isolation layers of semiconductor devices

Номер патента: US20060024913A1. Автор: Bo Jo. Владелец: DongbuAnam Semiconductor Inc. Дата публикации: 2006-02-02.

Group iii nitride crystal substrate, method for producing same, and group iii nitride semiconductor device

Номер патента: EP1736572B1. Автор: Fumio Kawamura,Yusuke Mori,Masashi Yoshimura,Takatomo Sasaki,Ryu c/o Itami Works of Sumitomo Electric Ind. Ltd. HIROTA,Seiji c/o Itami Works of Sumitomo Electric Ind. Ltd. NAKAHATA. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2012-06-20.

Method for forming graphene barrier layer for semiconductor device and contact structure formed by the same

Номер патента: US20230081962A1. Автор: Won Jun Yoon,Jee Hye Park,Dong Woo Kim,Tae Sung Kim,Jin Ho Jeon,Hong Ki PARK,Woo Hoon SUN,Keon Jung LEE. Владелец: Wonik Ips Co Ltd. Дата публикации: 2023-03-16.

Copper interconnection, method for forming copper interconnection structure, and semiconductor device

Номер патента: US20120295438A1. Автор: Akihiro Shibatomi,Junichi Koike. Владелец: Advanced Interconnect Materials LLC. Дата публикации: 2012-11-22.

Method for selecting photosensitive resin composition, method for producing patterned cured film, cured film, semiconductor device, and method for producing semiconductor device

Номер патента: US20240361697A1. Автор: Kazuyuki Mitsukura,Masaya TOBA,Takuya KOMINE,Yu Aoki,Yuki IMAZU. Владелец: Resonac Corp. Дата публикации: 2024-10-31.

DBC substrate for power semiconductor devices, method for fabricating a DBC substrate and power semiconductor device having a DBC substrate

Номер патента: US12119284B2. Автор: Alexander Roth. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2024-10-15.

Method for manufacturing an interconnect structure for stacked semiconductor device

Номер патента: US20020074670A1. Автор: Tadatomo Suga. Владелец: Tadatomo Suga. Дата публикации: 2002-06-20.

Method for filling a space in a semiconductor

Номер патента: US11824122B2. Автор: Zheng Tao,Boon Teik CHAN,Waikin Li. Владелец: Interuniversitair Microelektronica Centrum vzw IMEC. Дата публикации: 2023-11-21.

Method for filling a space in a semiconductor

Номер патента: US20210296500A1. Автор: Zheng Tao,Boon Teik CHAN,Waikin Li. Владелец: Interuniversitair Microelektronica Centrum vzw IMEC. Дата публикации: 2021-09-23.

Methods for protecting gate stacks during fabrication of semiconductor devices and semiconductor devices fabricated from such methods

Номер патента: US20110121397A1. Автор: Rohit Pal,Frank Bin YANG,Michael Hargrove. Владелец: Globalfoundries Inc. Дата публикации: 2011-05-26.

Method for forming ohmic contacts on compound semiconductor devices

Номер патента: US20230369436A1. Автор: Chung-Yi Chiu,Da-Jun Lin,Fu-Yu Tsai,Bin-Siang Tsai. Владелец: United Microelectronics Corp. Дата публикации: 2023-11-16.

Method for forming improved liner layer and semiconductor device including the same

Номер патента: US20180019163A1. Автор: Chih-Chao Yang,Conal E. Murray. Владелец: International Business Machines Corp. Дата публикации: 2018-01-18.

Method for forming improved liner layer and semiconductor device including the same

Номер патента: US20180019164A1. Автор: Chih-Chao Yang,Conal E. Murray. Владелец: International Business Machines Corp. Дата публикации: 2018-01-18.

Method for manufacturing an underfill in a semiconductor chip package

Номер патента: GB201213365D0. Автор: . Владелец: International Business Machines Corp. Дата публикации: 2012-09-12.

Method for manufacturing integrated circuits from a semiconductor substrate wafer

Номер патента: US20230223358A1. Автор: Alexandre Malherbe,David Parker,Stephan Niel,Carlos Augusto Suarez Segovia,Chantal TROUILLER. Владелец: STMicroelectronics Crolles 2 SAS. Дата публикации: 2023-07-13.

Method for manufacturing etch stop areas for contacting semiconductor devices

Номер патента: US20180114724A1. Автор: Dmitri Alex Tschumakow,Claus Dahl. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2018-04-26.

Method for manufacturing etch stop areas for contacting semiconductor devices

Номер патента: US10354917B2. Автор: Dmitri Alex Tschumakow,Claus Dahl. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2019-07-16.

Method for manufacturing a semiconductor device including interconnections having a smaller width

Номер патента: US20080090409A1. Автор: Taizo Yasuda. Владелец: Elpida Memory Inc. Дата публикации: 2008-04-17.

Multilayer wiring, method for placing dummy wiring in multilayer wiring, semiconductor device, and semiconductor device manufacturing method

Номер патента: US20110089569A1. Автор: Kazuhiko Asakawa. Владелец: Oki Semiconductor Co Ltd. Дата публикации: 2011-04-21.

Method for fabricating semiconductor device and method for fabricating semiconductor substrate used in the semiconductor device

Номер патента: US20050014386A1. Автор: Kenji Yoneda. Владелец: Matsushita Electric Industrial Co Ltd. Дата публикации: 2005-01-20.

Systems and methods for air flow optimization in environment for semiconductor device

Номер патента: US12142507B2. Автор: Hsu-Shui Liu,Jiun-Rong Pai,Cheng-Lung Wu,Yang-Ann Chu,Yi-Fam SHIU. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-11-12.

Semiconductor device manufacturing method using a sealing layer for sealing of a gap between two wafers bonded to each other

Номер патента: WO2016071064A1. Автор: Wolfgang Janisch,Sven Matthias,Atze De Vries. Владелец: ABB TECHNOLOGY AG. Дата публикации: 2016-05-12.

Systems and methods for increasing packing density in a semiconductor cell array

Номер патента: US20160358909A1. Автор: Sehat Sutardja,Peter Lee,Runzi Chang,Winston Lee. Владелец: MARVELL WORLD TRADE LTD. Дата публикации: 2016-12-08.

Lead frame with radiator plate, method for manufacturing lead frame with radiator plate, semiconductor device, and method for manufacturing semiconductor device

Номер патента: US20150270204A1. Автор: Tomohiro Kuroda. Владелец: Toyota Motor Corp. Дата публикации: 2015-09-24.

Method for producing an n-doped field stop zone in a semiconductor body and semiconductor component having a field stop zone

Номер патента: US20060035436A1. Автор: Hans-Joachim Schulze. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2006-02-16.

Method for producing a package for a semiconductor device

Номер патента: US4710250A. Автор: Hidehiko Akasaki,Haruo Kojima. Владелец: Fujitsu Ltd. Дата публикации: 1987-12-01.

Method for fabricating via holes in a semiconductor wafer

Номер патента: US4348253A. Автор: Saligrama N. Subbarao,Ho-Chung Huang. Владелец: RCA Corp. Дата публикации: 1982-09-07.

Semiconductor device package comprising side walls connected with contact pads of a semiconductor die

Номер патента: US11978693B2. Автор: Ralf Otremba,Petteri Palm,Andreas Riegler,Ulrich FROEHLER. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2024-05-07.

Systems and methods for forming additional metal routing in semiconductor devices

Номер патента: EP1977447A2. Автор: James Green,Mark Fischer,Terry McDaniel. Владелец: Micron Technology Inc. Дата публикации: 2008-10-08.

Method for manufacturing semiconductor devices

Номер патента: US11244862B2. Автор: Kenji Yoshikawa,Masato Negishi,Masato Suzuki,Tatsuro Yoshino. Владелец: Mitsubishi Electric Corp. Дата публикации: 2022-02-08.

Method for manufacturing semiconductor devices

Номер патента: US20200111709A1. Автор: Kenji Yoshikawa,Masato Negishi,Masato Suzuki,Tatsuro Yoshino. Владелец: Mitsubishi Electric Corp. Дата публикации: 2020-04-09.

Semiconductor device with vias having a zinc-second metal-copper composite layer

Номер патента: US20200286837A1. Автор: Nazila Dadvand. Владелец: Texas Instruments Inc. Дата публикации: 2020-09-10.

Semiconductor device with vias having a zinc-second metal-copper composite layer

Номер патента: WO2020180910A1. Автор: Nazila Dadvand. Владелец: Texas Instruments Japan Limited. Дата публикации: 2020-09-10.

Manufacturing method of a semiconductor device using a protect layer along a top sidewall of a trench to widen the bottom of the trench

Номер патента: US11805640B2. Автор: Chung-Lin Huang. Владелец: Nanya Technology Corp. Дата публикации: 2023-10-31.

Method for integrating metals having different work functions to form cmos gates having a high-k gate dielectric and related structure

Номер патента: WO2005048320A3. Автор: Qi Xiang,George Jonathan Kluth,Jung-Suk Goo,Huicai Zhong,Allison Kay Holbrook,Joong S Jeon. Владелец: Joong S Jeon. Дата публикации: 2005-10-27.

Method for integrating metals having different work functions to form cmos gates having a high-k gate dielectric and related structure

Номер патента: EP1661177A2. Автор: Qi Xiang,George Jonathan Kluth,Jung-Suk Goo,Huicai Zhong,Joong S. Jeon,Allison Kay Holbrook. Владелец: Advanced Micro Devices Inc. Дата публикации: 2006-05-31.

Method for integrating metals having different work functions to form cmos gates having a high-k gate dielectric and related structure

Номер патента: WO2005048320A2. Автор: Qi Xiang,George Jonathan Kluth,Jung-Suk Goo,Huicai Zhong,Joong S. Jeon,Allison Kay Holbrook. Владелец: Advanced Micro Devices, Inc.. Дата публикации: 2005-05-26.

Systems and methods for air flow optimization in environment for semiconductor device

Номер патента: US20230386877A1. Автор: Hsu-Shui Liu,Jiun-Rong Pai,Cheng-Lung Wu,Yang-Ann Chu,Yi-Fam SHIU. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-30.

Method for forming alignment keys of semiconductor structure and semiconductor structure having alignment keys

Номер патента: US20240055361A1. Автор: Tsung-Yu Yang,Shan-Shi Huang,Shin-Hung Li,Yuan Yu Chung,Che-Hua CHANG,Ruei Jhe Tsao. Владелец: United Microelectronics Corp. Дата публикации: 2024-02-15.

Method for manufacturing semiconductor device

Номер патента: US20230420299A1. Автор: Tomoyuki Kamakura,Koichi Mizugaki,Yasuke Matsuzawa. Владелец: Seiko Epson Corp. Дата публикации: 2023-12-28.

Methods of forming a masking pattern and a semiconductor device structure

Номер патента: US20160260606A1. Автор: Hans-Peter Moll,Peter Baars. Владелец: Globalfoundries Inc. Дата публикации: 2016-09-08.

Semiconductor device having a reversed T-shaped profile in the metal gate line-end

Номер патента: US09780213B2. Автор: Chien-Chih Lin,Guan-Jie Shen,Chien-Hung Yeh,Chia-Der Chang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-10-03.

Method of manufacturing a semiconductor integrated circuit device

Номер патента: US6057241A. Автор: Hideo Miura,Shuji Ikeda,Yasushi Matsuda,Akira Takamatsu,Norio Suzuki,Hirohiko Yamamoto,Hirofumi Shimizu,Yasuko Yoshida,Masamichi Kobayashi,Kazushi Fukuda,Shinichi Horibe,Toshio Nozoe. Владелец: Hitachi ULSI Systems Co Ltd. Дата публикации: 2000-05-02.

Sealed cavity embedded in a semiconductor wafer

Номер патента: EP4258341A3. Автор: James G. Fiorenza,Yingqi Jiang. Владелец: Analog Devices Inc. Дата публикации: 2024-01-17.

Method of etching a semiconductor device

Номер патента: US7144749B2. Автор: Khim Hong Ng,Chin Ling Pong. Владелец: Systems on Silicon Manufacturing Co Pte Ltd. Дата публикации: 2006-12-05.

Uniform sidewall profile etch method for forming low contact leakage schottky diode contact

Номер патента: US6096629A. Автор: Yen-Shih Ho,Jun-Lin Tsai. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2000-08-01.

Single poly plate low on resistance extended drain metal oxide semiconductor device

Номер патента: US20140332886A1. Автор: Shyi-Yuan Wu,Wing-Chor CHAN. Владелец: Macronix International Co Ltd. Дата публикации: 2014-11-13.

Single poly plate low on resistance extended drain metal oxide semiconductor device

Номер патента: US20150140764A1. Автор: Shyi-Yuan Wu,Wing-Chor CHAN. Владелец: Macronix International Co Ltd. Дата публикации: 2015-05-21.

Method of making a semiconductor device

Номер патента: RU2606780C1. Автор: Гасан Абакарович Мустафаев,Арслан Гасанович Мустафаев,Абдулла Гасанович Мустафаев. Владелец: Федеральное государственное бюджетное образовательное учреждение высшего образования "Кабардино-Балкарский государственный университет им. Х.М. Бербекова" (КБГУ). Дата публикации: 2017-01-10.

Semiconductor Structure and Method for Forming the Same

Номер патента: US20230420262A1. Автор: Yang Yuan,Tongqing CHEN,Zuohua ZHU. Владелец: Hua Hong Semiconductor Wuxi Co Ltd. Дата публикации: 2023-12-28.

Patterning method for semiconductor device fabrication

Номер патента: US20140273468A1. Автор: Ming-Feng Shieh,Chih-Ming Lai,Yen-Chun Huang,Ken-Hsien Hsieh. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2014-09-18.

Semiconductor device fabrication methods with enhanced control in recessing processes

Номер патента: US20130078791A1. Автор: Robert J. Miller,Ruilong Xie. Владелец: Globalfoundries Inc. Дата публикации: 2013-03-28.

Method for improving performance and reliability of MOS technologies and data retention characteristics of flash memory cells

Номер патента: US20010007785A1. Автор: Kenneth Harvey,Timothy Rost. Владелец: Individual. Дата публикации: 2001-07-12.

Charge Compensation Semiconductor Devices

Номер патента: US20190123137A1. Автор: Franz Hirler,Christian Fachmann,Maximilian Treiber,Daniel Tutuc. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2019-04-25.

Semiconductor device and method for manufacturing the same

Номер патента: US20150056730A1. Автор: Myung cheol Yoo,Sang Don Lee,Se Jong Oh,Kyu Sung Hwang,Moo Keun Park. Владелец: VERTICLE Inc. Дата публикации: 2015-02-26.

Method for manufacturing capacitor for semiconductor device

Номер патента: US20070020869A1. Автор: Chang Han. Владелец: Dongbu Electronics Co Ltd. Дата публикации: 2007-01-25.

Plasma etching method for semiconductor device and etching apparatus of the same

Номер патента: US20020137340A1. Автор: Kye-Hyun Baek,Kil-Ho Kim. Владелец: Individual. Дата публикации: 2002-09-26.

Manufacturing method of semiconductor device

Номер патента: US09960278B2. Автор: Keiji Sato,Tetsunori Maruyama,Toshinari Sasaki,Yuhei Sato,Atsuo Isobe,Sachiaki TEZUKA,Tsutomu Murakawa. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2018-05-01.

FinFET and nanowire semiconductor devices with suspended channel regions and gate structures surrounding the suspended channel regions

Номер патента: US09577100B2. Автор: Kern Rim,Michael P. Chudzik,Kangguo Cheng,Judson R. Holt,Henry K. Utomo,Rishikesh Krishnan,Yue Ke,Eric C. Harley. Владелец: Globalfoundries Inc. Дата публикации: 2017-02-21.

Structure and method for forming a faceted opening and a layer filling therein

Номер патента: US20030085444A1. Автор: William Polinsky,Dirk Sundt,Mark Bossler,Gabriel Videla,Chris Inman. Владелец: Individual. Дата публикации: 2003-05-08.

Structure and method for forming a faceted opening and layer filling therein

Номер патента: US20040046229A1. Автор: William Polinsky,Dirk Sundt,Mark Bossler,Gabriel Videla,Chris Inman. Владелец: Individual. Дата публикации: 2004-03-11.

Method of manufacturing semiconductor device

Номер патента: US09679908B2. Автор: Masaaki Shinohara. Владелец: Renesas Electronics Corp. Дата публикации: 2017-06-13.

Method for etching the surface of sapphire plates

Номер патента: RU2771457C1. Автор: Владимир Михайлович Каневский,Андрей Викторович Буташин,Арсен Эмирбегович Муслимов,Абубакар Магомедович Исмаилов. Владелец: Федеральное государственное учреждение "Федеральный научно-исследовательский центр "Кристаллография и фотоника" Российской академии наук". Дата публикации: 2022-05-04.

Capacitor and method for forming the same

Номер патента: US6218259B1. Автор: Salman Akram. Владелец: Micron Technology Inc. Дата публикации: 2001-04-17.

Method of forming gate electrode in semiconductor device

Номер патента: US20040259369A1. Автор: Cha Dong,Ho Son. Владелец: Individual. Дата публикации: 2004-12-23.

Method for manufacturing semiconductor device

Номер патента: US8629433B2. Автор: Shunpei Yamazaki,Hideto Ohnuma. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2014-01-14.

Semiconductor device and method for fabricating the same

Номер патента: US20070224761A1. Автор: Masatoshi Takami. Владелец: Fujitsu Ltd. Дата публикации: 2007-09-27.

Semiconductor device and method for fabricating the same

Номер патента: US7534712B2. Автор: Masatoshi Takami. Владелец: Fujitsu Semiconductor Ltd. Дата публикации: 2009-05-19.

Semiconductor device and method for fabricating the same

Номер патента: US7235849B2. Автор: Masatoshi Takami. Владелец: Fujitsu Ltd. Дата публикации: 2007-06-26.

Substrate for manufacturing display device, and method for manufacturing display device by using same

Номер патента: US20230299055A1. Автор: Kisu Kim,Jinhyung LEE,Changseo Park,Younho HEO,Yongil SHIN. Владелец: LG ELECTRONICS INC. Дата публикации: 2023-09-21.

Semiconductor device and method of forming a thin wafer without a carrier

Номер патента: US09842775B2. Автор: Pandi C. Marimuthu,Shuangwu Huang,Nathapong Suthiwongsunthorn. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2017-12-12.

Manufacturing method of semiconductor device

Номер патента: US09741578B2. Автор: Tohru Oka,Noriaki Murakami,Kota YASUNISHI. Владелец: Toyoda Gosei Co Ltd. Дата публикации: 2017-08-22.

Method of manufacturing semiconductor device using meander-shaped heating element

Номер патента: US09449849B2. Автор: Hitoshi Murata,Tetsuya Kosugi,Shinobu Sugiura. Владелец: HITACHI KOKUSAI ELECTRIC INC. Дата публикации: 2016-09-20.

Semiconductor device and method of forming a thin wafer without a carrier

Номер патента: US09443762B2. Автор: Pandi C. Marimuthu,Shuangwu Huang,Nathapong Suthiwongsunthorn. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2016-09-13.

Method for fabricating floating gate

Номер патента: US20040110342A1. Автор: Yu-Chi Sun,Tse-Yao Huang,Chao-Wen Lay. Владелец: Nanya Technology Corp. Дата публикации: 2004-06-10.

Optoelectronic device comprising a semiconductor layer based on GeSn having a single-crystal portion with a direct band structure and an underlying barrier region

Номер патента: US12040595B2. Автор: Pablo Acosta Alba,Vincent Reboud,Lara CASIEZ. Владелец: Commissariat a lEnergie Atomique et aux Energies Alternatives CEA. Дата публикации: 2024-07-16.

OPTOELECTRONIC DEVICE COMPRISING A SEMICONDUCTOR LAYER BASED ON GeSn HAVING A SINGLE-CRYSTAL PORTION WITH A DIRECT BAND STRUCTURE AND AN UNDERLYING BARRIER REGION

Номер патента: US20230187567A1. Автор: Pablo Acosta Alba,Vincent Reboud,Lara CASIEZ. Владелец: Commissariat a lEnergie Atomique et aux Energies Alternatives CEA. Дата публикации: 2023-06-15.

Oxide semiconductor film, method for forming oxide semiconductor film, and semiconductor device

Номер патента: US09583632B2. Автор: Shunpei Yamazaki. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2017-02-28.

Method for manufacturing capacitor array, capacitor array, and semiconductor device

Номер патента: US20230231007A1. Автор: Liutao ZHOU,Shuo Pan. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-07-20.

Method for producing a package for a semiconductor chip, package for a semiconductor chip and semiconductor device

Номер патента: WO2023083461A1. Автор: Mohd Fauzi ZAINORDIN,Mazwan MANSOR,Ismail ITHNAIN. Владелец: Ams-Osram International Gmbh. Дата публикации: 2023-05-19.

Methods for forming narrow vertical pillars and integrated circuit devices having the same

Номер патента: US09627611B2. Автор: Jun Liu,Kunal Parekh. Владелец: Micron Technology Inc. Дата публикации: 2017-04-18.

Oxide sintered body and method for manufacturing the same, sputtering target, and semiconductor device

Номер патента: US09957604B2. Автор: Kenichi Watatani,Koichi Sogabe,Miki Miyanaga. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2018-05-01.

Solid-state imaging device, method for manufacturing solid-state imaging device, method for manufacturing solid-state imaging element, and semiconductor device

Номер патента: US09484368B2. Автор: Hiroyuki Kawashima. Владелец: Sony Corp. Дата публикации: 2016-11-01.

Primer, substrate equipped with primer layer, method for producing substrate equipped with primer layer, semiconductor device, and method for producing semiconductor device

Номер патента: US20230183415A1. Автор: Shingo Tanaka,Yoshitaka Takezawa,Ning Tang. Владелец: Showa Denko Materials Co Ltd. Дата публикации: 2023-06-15.

Method for assembling a carrier and a semiconductor device

Номер патента: US20010007288A1. Автор: Jeffrey Coffin,Peter Brofman,Kathleen Stalter,Anson Call. Владелец: Individual. Дата публикации: 2001-07-12.

Method for forming a three-dimensional (3D) memory device having bonded semiconductor structures

Номер патента: US12080697B2. Автор: WEI Liu,Shiqi HUANG,Bater Chelon,Siping Hu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-09-03.

Component arrangement and method for determining the temperature in a semiconductor component

Номер патента: US20070200193A1. Автор: Wolfgang Horn. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2007-08-30.

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Номер патента: US09903905B2. Автор: Stefan Butzmann,Peter Feuerstack,Holger Sievert. Владелец: ROBERT BOSCH GMBH. Дата публикации: 2018-02-27.

Method for designing piezoelectric element unit, ultrasonic element having the piezoelectric element unit manufactured using the same, method for manufacturing the ultrasonic element, and acoustic pressure focusing device having the ultrasonic element

Номер патента: US20220013711A1. Автор: Shin Hur,Kyungjun Song,Gilho YOON,Hyunggyu CHOI. Владелец: Korea Institute of Machinery and Materials KIMM. Дата публикации: 2022-01-13.

Methods for forming narrow vertical pillars and integrated circuit devices having the same

Номер патента: US10971683B2. Автор: Jun Liu,Kunal Parekh. Владелец: Micron Technology Inc. Дата публикации: 2021-04-06.

Method for making metal oxide nano particle and light emitting device having light emitting layer distributed metal oxide nano particle and fabrication method thereof

Номер патента: WO2009072780A3. Автор: Young-Ho Kim,Tae-Whan Kim,Jae-Hun Jung,Fushan Li. Владелец: Fushan Li. Дата публикации: 2009-07-23.

Method for fabricating semiconductor structure, semiconductor structure, and semiconductor device

Номер патента: US20240057350A1. Автор: Ling-Yi Chuang,Kaimin Lv. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-02-15.

Method for manufacturing semiconductor element, semiconductor element, and semiconductor device

Номер патента: EP4266350A1. Автор: Yuichiro Hayashi,Katsunori Azuma,Kokichi Fujita,Tomohisa Hirayama,Katsuaki Masaki,Tatsuro SAWADA,Hayao KASAI. Владелец: Kyocera Corp. Дата публикации: 2023-10-25.

Systems and methods for distributing I/O in a semiconductor device

Номер патента: US7271485B1. Автор: Parag N. Madhani,Paul F. Barnes,Donald E. Hawk, Jr.,Kandaswamy Prabakaran. Владелец: Agere Systems LLC. Дата публикации: 2007-09-18.

Apparatus and Method For Generating Test Pattern Data For Testing Semiconductor Device

Номер патента: US20080040639A1. Автор: Jong Koo Kang. Владелец: UniTest Inc. Дата публикации: 2008-02-14.

Structure and method of forming a multiple leadframe semiconductor device

Номер патента: US20030209804A1. Автор: James Knapp,Stephen Germain. Владелец: Semiconductor Components Industries LLC. Дата публикации: 2003-11-13.

Al-ga-n template, method for preparing al-ga-n template, and semiconductor device comprising al-ga-n template

Номер патента: US20180323337A1. Автор: Peng Li,Jiangbo Wang,Wubin Zhang,Binzhong DONG,Haiping AI. Владелец: HC Semitek Suzhou Co Ltd. Дата публикации: 2018-11-08.

Reverse profiling method for profiling modulated impurity density distribution of semiconductor device

Номер патента: US6242272B1. Автор: Kiyoshi Takeuchi,Shigetaka Kumashiro. Владелец: NEC Corp. Дата публикации: 2001-06-05.

Method for determining lead span and planarity of semiconductor devices

Номер патента: US6489173B1. Автор: Alvin P. Cyril. Владелец: Texas Instruments Inc. Дата публикации: 2002-12-03.

Systems and methods for determining specification limits in a semiconductor device virtual fabrication environment

Номер патента: US20230252211A1. Автор: David M. Fried,William J. Egan,Anshuman Kunwar,Kenneth Greiner. Владелец: Coventor Inc. Дата публикации: 2023-08-10.

Systems and methods for determining specification limits in a semiconductor device virtual fabrication environment

Номер патента: WO2022015897A1. Автор: David M. Fried,Kenneth B. Greiner,William J. Egan,Anshuman Kunwar. Владелец: Coventor, Inc.. Дата публикации: 2022-01-20.

Systems and methods for determining specification limits in a semiconductor device virtual fabrication environment

Номер патента: WO2022015897A9. Автор: David M. Fried,Kenneth B. Greiner,William J. Egan,Anshuman Kunwar. Владелец: Coventor, Inc.. Дата публикации: 2022-03-10.

Polymer for forming insulating film, composition for forming insulating film, insulating film, and electronic device having same

Номер патента: US20100130672A1. Автор: Kazuyoshi Fujita,Sumitoshi Asakuma,Yohko Sano. Владелец: Sumitomo Bakelite Co Ltd. Дата публикации: 2010-05-27.

Method for fabricating a body region for a vertical MOS transistor arrangement having a reduced on resistivity

Номер патента: US6670244B2. Автор: Franz Hirler,Helmut Strack,Helmut Gassel,Werner Kanert,Herbert Pairitsch. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2003-12-30.

Method for fabricating a body region for a vertical MOS transistor arrangement having a reduced on resistivity

Номер патента: US20020142527A1. Автор: Franz Hirler,Helmut Strack,Helmut Gassel,Werner Kanert,Herbert Pairitsch. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2002-10-03.

A semiconductor device for extracting a signal used to monitor potential of a high voltage island at a low voltage island and method of manufacturing the same

Номер патента: US5200638A. Автор: Hiroshi Yamaguchi,Masanori Fukunaga,Kazumasa Satsuma,Takeshi Kida,Masao Yoshizawa,Tomohide Terashima,Gourab Majumdar. Владелец: Mitsubishi Electric Corp. Дата публикации: 1993-04-06.

Semiconductor device including a normally-off transistor and transistor cells of a normally-on GaN HEMT

Номер патента: US9263443B2. Автор: Ralf Siemieniec,Michael Treu. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2016-02-16.

Method of manufacturing a semiconductor device for extracting a signal used to monitor potential of a high voltage island

Номер патента: US5279977A. Автор: Hiroshi Yamaguchi,Masanori Fukunaga,Kazumasa Satsuma,Takeshi Kida,Masao Yoshizawa,Tomohide Terashima,Gourab Majumdar. Владелец: Mitsubishi Electric Corp. Дата публикации: 1994-01-18.

System and method for analyzing error information from a semiconductor fabrication process

Номер патента: US20030055592A1. Автор: Weidong Wang,Jonathan Buckheit. Владелец: Individual. Дата публикации: 2003-03-20.

Structure and method for test-point access in a semiconductor

Номер патента: US20240047281A1. Автор: SWAMINATHAN Subramanian,Hubert Martin Bode,Kristofor Jason Dickson,Kent Bradley Erington,Kurt Ulrich Neugebauer,William Franklin Johnstone. Владелец: NXP USA Inc. Дата публикации: 2024-02-08.

Semiconductor device with electrodes having a columnar portion

Номер патента: US11842971B2. Автор: Kenji Fujii. Владелец: ROHM CO LTD. Дата публикации: 2023-12-12.

System and method for suppressing RF resonance in a semiconductor package

Номер патента: US20020113300A1. Автор: John Geary,Joseph Freund,Mindaugas Dautartas. Владелец: Lucent Technologies Inc. Дата публикации: 2002-08-22.

Apparatus and methods for effecting a burn-in procedure on semiconductor devices

Номер патента: US4745354A. Автор: Douglas S. Fraser. Владелец: FTS Systems Inc. Дата публикации: 1988-05-17.

Method for fabricating adaptor for aligning and electrically coupling circuit devices having dissimilar connectivity patterns

Номер патента: US20040007762A1. Автор: Brock LaMeres. Владелец: AGILENT TECHNOLOGIES INC. Дата публикации: 2004-01-15.

Method for producing group III nitride-based compound semiconductor device

Номер патента: US20100248404A1. Автор: Masahiro Ohashi,Toshiya Umemura. Владелец: Toyoda Gosei Co Ltd. Дата публикации: 2010-09-30.

Multilayer printed wiring board, solder resist composition, method for manufacturing multilayer printed wiring board, and semiconductor device

Номер патента: EP2028915A1. Автор: Yoshitaka Ono,Motoo Asai,Yukihiko Toyoda,Dongdong Wang,Kenichi Shimada,Koji Sekine,Hui Zhong. Владелец: Ibiden Co Ltd. Дата публикации: 2009-02-25.

Semiconductor device for extracting a signal used to monitor potential of a high voltage island at a low voltage island and method of manufacturing the same

Номер патента: US5258641A. Автор: Hiroshi Yamaguchi,Masanori Fukunaga,Kazumasa Satsuma,Takeshi Kida,Masao Yoshizawa,Tomohide Terashima,Gourab Majumdar. Владелец: Mitsubishi Electric Corp. Дата публикации: 1993-11-02.

Apparatus and methods for effecting a burn-in procedure on semiconductor devices.

Номер патента: MY100200A. Автор: S Fraser Douglas. Владелец: Fts System Inc. Дата публикации: 1990-04-10.

Oxide layer and production method for oxide layer, as well as capacitor, semiconductor device, and microelectromechanical system provided with oxide layer

Номер патента: US20160016813A1. Автор: Tatsuya Shimoda,Eisuke Tokumitsu,Takaaki Miyasako,Masatoshi Onoue. Владелец: JAPAN SCIENCE AND TECHNOLOGY AGENCY. Дата публикации: 2016-01-21.

Semiconductor device that can have a defective bit found during or after packaging process repaired

Номер патента: US20030030135A1. Автор: Kazushi Sugiura,Ryuji Ohmura. Владелец: Mitsubishi Electric Corp. Дата публикации: 2003-02-13.

Solar cell module having a surface protective member composed of a fluororesin containing an ultraviolet absorber dispersed therein

Номер патента: US5582653A. Автор: Satoru Yamada,Ayako Komori,Takahiro Mori,Ichiro Kataoka,Hidenori Shiotsuka. Владелец: Canon Inc. Дата публикации: 1996-12-10.

Method for manufacturing SOI substrate in which crystal defects of a single crystal semiconductor layer are reduced and method for manufacturing semiconductor device

Номер патента: US09633892B2. Автор: Shunpei Yamazaki,Takashi Shimazu,Eriko Nishida. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2017-04-25.

Semiconductor device having bed structure underlying electrode pad

Номер патента: US6465894B2. Автор: Noboru Koike. Владелец: Toshiba Corp. Дата публикации: 2002-10-15.

Bed structure underlying electrode pad of semiconductor device and method for manufacturing same

Номер патента: US20010040242A1. Автор: Noboru Koike. Владелец: Toshiba Corp. Дата публикации: 2001-11-15.

Semiconductor devices and methods for forming semiconductor devices

Номер патента: US20040097048A1. Автор: Kwan Koh. Владелец: Anam Semiconductor Inc. Дата публикации: 2004-05-20.

Method for manufacturing an SOI substrate

Номер патента: EP1981079A3. Автор: ITO Atsuo,Koichi Tanaka,Makoto Kawai,Yoshihiro Kubota,Shoji Akiyama,Yuuji Tobisaka. Владелец: Shin Etsu Chemical Co Ltd. Дата публикации: 2009-09-23.

Method of manufacturing semiconductor devices having multi-level wiring structure

Номер патента: US6037278A. Автор: Koji Kishimoto,Ken-Ichi Koyanagi. Владелец: NEC Corp. Дата публикации: 2000-03-14.

Structure and method for forming a trench mosfet having self-aligned features

Номер патента: WO2004105090A2. Автор: Robert Herrick,Becky Losee,Dean Probst. Владелец: Fairchild Semiconductor Corporation. Дата публикации: 2004-12-02.

Method for manufacturing semiconductor device

Номер патента: US8115255B2. Автор: Joong Sik Kim,Sung Woong Chung. Владелец: Hynix Semiconductor Inc. Дата публикации: 2012-02-14.

Manufacturing method of semiconductor substrate and manufacturing method of semiconductor device

Номер патента: US20110244660A1. Автор: Junichi Koezuka. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2011-10-06.

Semiconductor Device and Method for Forming Passive Circuit Elements With Through Silicon Vias to Backside Interconnect Structures

Номер патента: US20130015554A1. Автор: Qing Zhang,KANG Chen,Yaojian Lin,Jianmin Fang,Haijing Cao. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2013-01-17.

Method for manufacturing semiconductor device

Номер патента: US20100006939A1. Автор: Joong Sik Kim,Sung Woong Chung. Владелец: Hynix Semiconductor Inc. Дата публикации: 2010-01-14.

Silicon oxide film growing apparatus

Номер патента: US5376176A. Автор: Atsushi Kuriyama. Владелец: NEC Corp. Дата публикации: 1994-12-27.

Method for manufacturing semiconductor device

Номер патента: RU2752125C1. Автор: Гасан Абакарович Мустафаев,Арслан Гасанович Мустафаев,Абдулла Гасанович Мустафаев,Наталья Васильевна Черкесова. Владелец: Федеральное государственное бюджетное образовательное учреждение высшего образования "Кабардино-Балкарский государственный университет им. Х.М. Бербекова" (КБГУ). Дата публикации: 2021-07-23.

Metal oxide semiconductor device and method for manufacturing the same

Номер патента: US20230170401A1. Автор: He Sun,Jiakun Wang. Владелец: Hangzhou Silicon Magic Semiconductor Technology Co Ltd. Дата публикации: 2023-06-01.

Semiconductor device and manufacturing method thereof

Номер патента: US7936016B2. Автор: Tadashi Yamaguchi,Toshiaki Tsutsumi,Tomonori Okudaira,Keiichiro Kashihara. Владелец: Renesas Electronics Corp. Дата публикации: 2011-05-03.

Semiconductor device and manufacturing method thereof

Номер патента: US20110207317A1. Автор: Tadashi Yamaguchi,Toshiaki Tsutsumi,Tomonori Okudaira,Keiichiro Kashihara. Владелец: Renesas Electronics Corp. Дата публикации: 2011-08-25.

Method of manufacture for a silicon-on-plastic semiconductor device with interfacial adhesion layer

Номер патента: US09812350B2. Автор: Julio C. Costa. Владелец: Qorvo US Inc. Дата публикации: 2017-11-07.

Fuse of Semiconductor Device and Method for Forming the Same

Номер патента: US20090236687A1. Автор: Min Gu Ko. Владелец: Hynix Semiconductor Inc. Дата публикации: 2009-09-24.

Fuse of semiconductor device and method for forming the same

Номер патента: US8017454B2. Автор: Min Gu Ko. Владелец: Hynix Semiconductor Inc. Дата публикации: 2011-09-13.

Semiconductor device and method for producing semiconductor device

Номер патента: US09508803B2. Автор: Yuki Nakano,Ryota Nakamura. Владелец: ROHM CO LTD. Дата публикации: 2016-11-29.

Semiconductor device with resistance circuit

Номер патента: US09461038B2. Автор: Hirofumi Harada. Владелец: Ablic Inc. Дата публикации: 2016-10-04.

Methods of forming a more highly-oriented silicon layer and substrate having the same

Номер патента: US20060292313A1. Автор: WENXU Xianyu,Huaxiang Yin,Kyung-bae Park,Takashi Noguchi,Young-soo Park,Xiaoxin Zhang,Hyuck Lim,Suk-pil Kim,Hans Cho. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2006-12-28.

Conductive structure in semiconductor structure and method for forming the same

Номер патента: US09748175B1. Автор: Joung-Wei Liou,Yi-Jung Liu,Huan-Wei Wu,Chester Tang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-08-29.

Semiconductor devices having through-electrodes and methods for fabricating the same

Номер патента: US09355961B2. Автор: Chajea JO,Hyunsoo Chung,Taeje Cho. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-05-31.

Semiconductor device and method of manufacturing the same

Номер патента: US20020093040A1. Автор: Kazuo Tomita. Владелец: Mitsubishi Electric Corp. Дата публикации: 2002-07-18.

Semiconductor device, method for manufacturing the same, and rinsing liquid

Номер патента: US09780008B2. Автор: Tsuneji Suzuki,Hirofumi Tanaka,Kazuo Kohmura,Yasuhisa Kayaba,Shoko Ono. Владелец: Mitsui Chemicals Inc. Дата публикации: 2017-10-03.

Semiconductor device with combined passive device on chip back side

Номер патента: US09524932B2. Автор: Martin Gruber,Andreas Munding. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2016-12-20.

Semiconductor device having an alignment mark

Номер патента: US6011292A. Автор: Tohru Yoshida. Владелец: Toshiba Corp. Дата публикации: 2000-01-04.

Semiconductor device and method for fabricating the same

Номер патента: US20240234319A9. Автор: Jin Kyu Kim,Jae Hyun Ahn,Ho Jun Kim,So Ra You,Jee Woong Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-11.

Semiconductor device and method for fabricating the same

Номер патента: US20240136290A1. Автор: Jin Kyu Kim,Jae Hyun Ahn,Ho Jun Kim,So Ra You,Jee Woong Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-04-25.

Semiconductor memory device and method for driving the same

Номер патента: US20220028833A1. Автор: Hidekazu Hayashi,Takuro Okubo. Владелец: Kioxia Corp. Дата публикации: 2022-01-27.

[method of forming ldd of semiconductor devices]

Номер патента: US20040229416A1. Автор: Ming-Sung Shih. Владелец: AU OPTRONICS CORP. Дата публикации: 2004-11-18.

Fuse of a semiconductor device

Номер патента: US8324664B2. Автор: Min Gu Ko. Владелец: Hynix Semiconductor Inc. Дата публикации: 2012-12-04.

Semiconductor memory device and method for driving the same

Номер патента: US11444061B2. Автор: Hidekazu Hayashi,Takuro Okubo. Владелец: Kioxia Corp. Дата публикации: 2022-09-13.

Semiconductor device and method for fabricating the same

Номер патента: US09524921B2. Автор: Tae-Seong Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-12-20.

Semiconductor device manufacturing method

Номер патента: US09460927B2. Автор: Hong-fei LU. Владелец: Fuji Electric Co Ltd. Дата публикации: 2016-10-04.

Semiconductor device having an inter-layer insulating film disposed between two wiring layers and method of manufacturing the same

Номер патента: US5075762A. Автор: Kazuo Tanaka,Toshihiko Kondo. Владелец: Seiko Epson Corp. Дата публикации: 1991-12-24.

Semiconductor device for integrated injection logic cell and process for fabricating the same

Номер патента: US20010035564A1. Автор: Hirokazu Ejiri. Владелец: Sony Corp. Дата публикации: 2001-11-01.

Method for Preventing Wafer Edge Peeling in Metal Wiring Process

Номер патента: US20080124891A1. Автор: YIN Long,Wenlei Chen,Hunglin Chen,Qiliang Ni,Kegang Zhang,Yanbo Shangguan,Xiaorong Zhu. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2008-05-29.

Semiconductor device for integrated injection logic cell and process for fabricating the same

Номер патента: EP1122787A3. Автор: Hirokazu Ejiri. Владелец: Sony Corp. Дата публикации: 2002-02-20.

Method for producing one-time-programmable memory cells and corresponding integrated circuit

Номер патента: US09881928B2. Автор: Philippe Candelier,Stephane Denorme. Владелец: STMICROELECTRONICS SA. Дата публикации: 2018-01-30.

Method for manufacturing semiconductor device

Номер патента: US09543204B2. Автор: Yoshihiro Saeki,Nobuaki Hoshi. Владелец: Longitude Semiconductor SARL. Дата публикации: 2017-01-10.

Semiconductor device and method for manufacturing the same

Номер патента: US20200105922A1. Автор: Meng Zhao. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2020-04-02.

Semiconductor device and method for manufacturing the same

Номер патента: US20190181258A1. Автор: Meng Zhao. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2019-06-13.

Method for wafer bonding and compound semiconductor wafer

Номер патента: US12068296B2. Автор: Stefan Hampl,Kerstin Kaemmer,Marco Haubold,Norbert Thyssen. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2024-08-20.

Semiconductor device and method of fabricating the same

Номер патента: US20020192893A1. Автор: Takayuki Igarashi,Yoshitaka Ootsu. Владелец: Mitsubishi Electric Corp. Дата публикации: 2002-12-19.

Epoxy resin composition for semiconductor encapsulation and method for manufacturing semiconductor device

Номер патента: US09963587B2. Автор: Katsushi Kan,Yukari Kouno. Владелец: Nagase Chemtex Corp. Дата публикации: 2018-05-08.

Layout scheme and method for forming device cells in semiconductor devices

Номер патента: US09853035B2. Автор: Hsien-Yu Pan,Jung-Hsuan Chen,Shao-Yu Chou,Yen-Huei Chen,Hung-jen Liao. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-12-26.

Method of forming a semiconductor device having a conductor in a sidewall of the substrate

Номер патента: US09761659B2. Автор: Hsiao-Tsung Yen,Cheng-Wei Luo. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-09-12.

Method for producing SOS substrates, and SOS substrate

Номер патента: US09646873B2. Автор: Makoto Kawai,Yoshihiro Kubota,Shoji Akiyama,Shigeru Konishi,Kazutoshi Nagata. Владелец: Shin Etsu Chemical Co Ltd. Дата публикации: 2017-05-09.

Semiconductor device and method for manufacturing the same

Номер патента: US20240203831A1. Автор: Young Woo Kim,Jin Kyu Kim,Kyoung Woo Lee,Min Chan Gwak,Yun Suk NAM,Hidenobu Fukutome,Anthony Dongick LEE,Sang Cheol Na,Guk Hee KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-06-20.

Semiconductor device and fabrication method thereof

Номер патента: US20210057272A1. Автор: Tiantian Zhang,Jingjing Tan. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2021-02-25.

Device and methods for high-K and metal gate slacks

Номер патента: US09865510B2. Автор: Ming Zhu,Harry-Hak-Lay Chuang,Bao-Ru Young,Po-Nien Chen,Jin-Aun Ng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-01-09.

Method of fabricating semiconductor integrated circuit devices including updiffusion to selectively dope a silicon layer

Номер патента: US5017507A. Автор: Hideyuki Miyazawa. Владелец: HITACHI LTD. Дата публикации: 1991-05-21.

Method for forming a trench dram cell with asymmetric strap using ion bombardment and corresponding dram structure

Номер патента: WO2009092657A1. Автор: Kangguo Cheng,Xi Li,Richard Stephen Wise. Владелец: Ibm United Kingdom Limited. Дата публикации: 2009-07-30.

Semiconductor package and method for fabricating the same

Номер патента: US20240234269A9. Автор: Donghyeon Jang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-11.

Reinforcing sheet and method for producing secondary mounted semiconductor device

Номер патента: US20160042986A1. Автор: Kosuke Morita,Naohide Takamoto,Hiroyuki Senzai. Владелец: Nitto Denko Corp. Дата публикации: 2016-02-11.

Reinforcing sheet and method for producing secondary mounted semiconductor device

Номер патента: US9472439B2. Автор: Kosuke Morita,Naohide Takamoto,Hiroyuki Senzai. Владелец: Nitto Denko Corp. Дата публикации: 2016-10-18.

Semiconductor device package and method for manufacturing the same

Номер патента: US20230223320A1. Автор: Zhou Zhou,Adam Brown,Ricardo Yandoc. Владелец: Nexperia BV. Дата публикации: 2023-07-13.

Semiconductor devices having contact plugs and local interconnects and methods for making the same

Номер патента: US20020182846A1. Автор: Daniel Smith,Sanh Tang,Jason Taylor. Владелец: Micron Technology Inc. Дата публикации: 2002-12-05.

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Номер патента: US20020182803A1. Автор: Daniel Smith,Sanh Tang,Jason Taylor. Владелец: Micron Technology Inc. Дата публикации: 2002-12-05.

Method for controlling resistivity and crystallinity of low-resistance material through pvd

Номер патента: US20240355626A1. Автор: Takahiro Nakayama,Tomohiro Saitou,Do Hyun Oh,Chang Min SHIM,Hang KANG,Byeong Hwa JEONG. Владелец: Ulvac Inc. Дата публикации: 2024-10-24.

Hybrid integrated semiconductor tri-gate and split dual-gate FinFET devices and method for manufacturing

Номер патента: US09922878B2. Автор: Roger Lee,De Yuan Xiao,Guo Qing Chen. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2018-03-20.

Semiconductor device and method of manufacturing the same

Номер патента: US09653400B2. Автор: Thomas Oszinda,Sang-hoon Ahn,Jong-min Baek,Woo-Kyung You,Kee-young Jun,Tae-Jin YIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-05-16.

Method of fabricating a semiconductor device

Номер патента: US9070604B2. Автор: Hisashi Ohtani,Shunpei Yamazaki. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2015-06-30.

Method for electrochemical local oxidation of silicon

Номер патента: US5877069A. Автор: Karl M. Robinson. Владелец: Micron Technology Inc. Дата публикации: 1999-03-02.

Packaging unit for direct cooling of semiconductor device and manufacturing method thereof

Номер патента: US20230361000A1. Автор: Hyun Wook Jung,Jong Won Lim,Min Soo Kang,Ho Kyun Ahn,Hae Cheon Kim,Hyoung Soon Lee. Владелец: Chung Ang University Industry Academic Cooperaiton Foundation. Дата публикации: 2023-11-09.

Method for manufacturing semiconductor device

Номер патента: US20120061760A1. Автор: Joong Sik Kim,Sung Woong Chung. Владелец: Hynix Semiconductor Inc. Дата публикации: 2012-03-15.

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Номер патента: US12040287B2. Автор: Chih-Cheng LEE,Hsing Kuo TIEN. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2024-07-16.

Method for manufacturing semiconductor device and semiconductor device

Номер патента: US20200303237A1. Автор: Shogo Shibata,Kosuke Yamaguchi,Maki Hasegawa,Shuhei Yokoyama,Seiya SUGIMACHI. Владелец: Mitsubishi Electric Corp. Дата публикации: 2020-09-24.

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Номер патента: EP4235762A3. Автор: Wen-Sung Hsu,Ta-Jen Yu,Tzu-Hung Lin,Andrew C. Chang. Владелец: MediaTek Inc. Дата публикации: 2023-09-20.

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Номер патента: US20080054465A1. Автор: Jong-Taek Hwang. Владелец: Dongbu HitekCo Ltd. Дата публикации: 2008-03-06.

High performance strained silicon finfets device and method for forming same

Номер патента: WO2005067677A2. Автор: Dureseti Chidambarrao,Qiqing C. Ouyang,Stephen W. Bedell,John A. Ott,Kevin K. Chan,Jack O. Chu,Kam-Leung Lee,Anthony G. Domenicucci,Anda C. Mocuta,Silke H. Christiansen. Владелец: INTERNATIONAL BUSINESS MACHINES CORPORATION. Дата публикации: 2005-07-28.

Semiconductor device including isolation structure with impurity and method for manufacturing the same

Номер патента: US20240347374A1. Автор: Kuo-Chung Hsu,En-Jui Li. Владелец: Nanya Technology Corp. Дата публикации: 2024-10-17.

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Номер патента: US20240347375A1. Автор: Kuo-Chung Hsu,En-Jui Li. Владелец: Nanya Technology Corp. Дата публикации: 2024-10-17.

Semiconductor devices and methods for manufacturing the same

Номер патента: US09704862B2. Автор: Donghyun Kim,Sunyoung Park,Jung-Ho Do,Ha-young Kim,Sanghoon Baek,Panjae PARK,Sutae Kim,Jaewan Choi. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-07-11.

Method for manufacturing semiconductor device and exposure mask used in the same method

Номер патента: US09601440B2. Автор: Takeyoshi Nishimura. Владелец: Fuji Electric Co Ltd. Дата публикации: 2017-03-21.

Method for forming self-aligned dual fully silicided gates in cmos devices

Номер патента: WO2006060574A2. Автор: Cyril Cabral, Jr.,Christian Lavoie,Sunfei Fang,Chester T. Dziobkowski,Clement H. Wann. Владелец: INTERNATIONAL BUSINESS MACHINES CORPORATION. Дата публикации: 2006-06-08.

Semiconductor device

Номер патента: US20240162286A1. Автор: Rolf Weis,Franz Hirler,Ahmed Mahmoud,Cornelius Fuchs. Владелец: Infineon Technologies Dresden GmbH and Co KG. Дата публикации: 2024-05-16.

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Номер патента: US20210126092A1. Автор: Motoyoshi KUBOUCHI. Владелец: Fuji Electric Co Ltd. Дата публикации: 2021-04-29.

Forming a fin using double trench epitaxy

Номер патента: US09923084B2. Автор: Shogo Mochizuki,Pouya Hashemi,Alexander Reznicek,Veeraraghavan S. Basker. Владелец: International Business Machines Corp. Дата публикации: 2018-03-20.

Forming a Fin using double trench epitaxy

Номер патента: US09653582B2. Автор: Shogo Mochizuki,Pouya Hashemi,Alexander Reznicek,Veeraraghavan S. Basker. Владелец: International Business Machines Corp. Дата публикации: 2017-05-16.

Forming a fin using double trench epitaxy

Номер патента: US09583599B2. Автор: Shogo Mochizuki,Pouya Hashemi,Alexander Reznicek,Veeraraghavan S. Basker. Владелец: International Business Machines Corp. Дата публикации: 2017-02-28.

Method of manufacturing semiconductor devices having a copper heat capacitor and/or copper heat sink

Номер патента: US4080722A. Автор: Arye Rosen,Jerome Barnard Klatskin. Владелец: RCA Corp. Дата публикации: 1978-03-28.

Process for producing semiconductor device

Номер патента: US5147810A. Автор: Kenichi Suzuki. Владелец: Oki Electric Industry Co Ltd. Дата публикации: 1992-09-15.

Semiconductor device having dual damascene line structure and method for fabricating the same

Номер патента: US20020030280A1. Автор: Kyung-Tae Lee,Seong-ho Liu. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2002-03-14.

Semiconductor device manufacturing method

Номер патента: US20140073102A1. Автор: Yoshiaki Toyoda,Takatoshi Oe. Владелец: Fuji Electric Co Ltd. Дата публикации: 2014-03-13.

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Номер патента: US20150028456A1. Автор: Wolfgang Wagner,Francisco Javier Santos Rodriguez,Holger Huesken. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2015-01-29.

Semiconductor device and fabrication method therefor

Номер патента: US20030104661A1. Автор: Kazuhide Koyama. Владелец: Sony Corp. Дата публикации: 2003-06-05.

Semiconductor devices and methods for fabricating the same

Номер патента: EP4283683A1. Автор: Hyun Cheol Kim,Yong Seok Kim,Dae Won Ha,Ki Heun Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-11-29.

Semiconductor device and method for forming the same

Номер патента: US11990415B2. Автор: Tiantian Zhang,Hailong Yu,Xuezhen JING,Zhangru XIAO,Zheyuan TONG. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2024-05-21.

Photonic semiconductor devices and methods for manufacturing the same

Номер патента: US11853870B2. Автор: Zhan SU,Huaiyu MENG,Yichen SHEN,Yanfei BAI,Jinghui ZOU. Владелец: Nanjing Guangzhiyuan Technology Co ltd. Дата публикации: 2023-12-26.

Method for forming photoelectric conversion region of image sensing device

Номер патента: US20240021654A1. Автор: Kang Yeon LEE. Владелец: SK hynix Inc. Дата публикации: 2024-01-18.

Double etch stop layer to protect semiconductor device layers from wet chemical etch

Номер патента: US20210082866A1. Автор: Chen Yu Chen,Eugene Chen,Ming Chyi Liu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-03-18.

Method for manufacturing semiconductor device

Номер патента: US20200066590A1. Автор: Kenji Yoshikawa,Masato Negishi,Masato Suzuki,Tatsuro Yoshino. Владелец: Mitsubishi Electric Corp. Дата публикации: 2020-02-27.

Semiconductor device having reliable electrical connection

Номер патента: US20010026015A1. Автор: Gorou Ikegami,Hirofumi Horita,Eita Iizuka. Владелец: NEC Corp. Дата публикации: 2001-10-04.

Method for manufacturing semiconductor device

Номер патента: US10930559B2. Автор: Kenji Yoshikawa,Masato Negishi,Masato Suzuki,Tatsuro Yoshino. Владелец: Mitsubishi Electric Corp. Дата публикации: 2021-02-23.

Semiconductor device and method of manufacturing the same

Номер патента: US09881917B2. Автор: Chien-Hua Chen,Sheng-chi Hsieh,Teck-Chong Lee,Hsu-Chiang Shih. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2018-01-30.

Semiconductor devices and methods for fabricating the same

Номер патента: US20230387297A1. Автор: Hyun Cheol Kim,Yong Seok Kim,Dae Won Ha,Ki Heun Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-11-30.

Semiconductor device structure and method for forming the same

Номер патента: US20240038839A1. Автор: Shuen-Shin Liang,Chia-Hung Chu,Lin-Yu HUANG,Sheng-Tsung Wang,Min-Hsuan LU. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-02-01.

Method of fabricating semiconductor device

Номер патента: US6380071B1. Автор: Takuji Onuma. Владелец: NEC Corp. Дата публикации: 2002-04-30.

Semiconductor device with combined passive device on chip back side

Номер патента: US20150311149A1. Автор: Martin Gruber,Andreas Munding. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2015-10-29.

Semiconductor device with etched landing pad surface

Номер патента: US20240023307A1. Автор: Yen-Ho CHU. Владелец: Nanya Technology Corp. Дата публикации: 2024-01-18.

Semiconductor device structure including a bonding structure

Номер патента: US20240153902A1. Автор: Shing-Yih Shih,Sheng-Fu Huang. Владелец: Nanya Technology Corp. Дата публикации: 2024-05-09.

Semiconductor device structure having a profile modifier

Номер патента: US20230253214A1. Автор: Shih-En LIN,Jui-Lin Chin. Владелец: Nanya Technology Corp. Дата публикации: 2023-08-10.

Semiconductor Device and Method of Making the Same

Номер патента: US20150255597A1. Автор: Albert Birner,Helmut Brech. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2015-09-10.

Tungsten film forming method

Номер патента: US20020048938A1. Автор: Mitsuhiro Tachibana,Hotaka Ishizuka. Владелец: Individual. Дата публикации: 2002-04-25.

Semiconductor device and method of manufacturing such a device

Номер патента: US6201291B1. Автор: Srdjan Kordic,Mareike K. Klee,Wilhelm A. Groen,Cornelis A. H. A. Mutsaers. Владелец: US Philips Corp. Дата публикации: 2001-03-13.

Semiconductor device and method of manufacturing such a device

Номер патента: WO1999030363A3. Автор: Srdjan Kordic,Cornelis Adrianus Hen Mutsaers,Wilhelm Albert Groen,Mareike Katharine Klee. Владелец: Philips Svenska AB. Дата публикации: 1999-08-26.

Test architecture of semiconductor device, test system, and method of testing semicondurctor devices at wafer level

Номер патента: US09824946B2. Автор: Young-Yong Byun,Chi-wook Kim,Ho-sung Song. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-11-21.

Methods of fabricating semiconductor devices and structures thereof

Номер патента: US09659778B2. Автор: Jin-Ping Han,Knut Stahrenberg. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2017-05-23.

Semiconductor device tape carrier, manufacturing method for semiconductor device, semiconductor device, and semiconductor module device

Номер патента: US20080061432A1. Автор: Kenji Toyosawa,Toshiharu Seko. Владелец: Sharp Corp. Дата публикации: 2008-03-13.

Method for manufacturing a semiconductor device

Номер патента: US6376331B1. Автор: Minoru Higuchi. Владелец: NEC Corp. Дата публикации: 2002-04-23.

Semiconductor device and method of fabricating the same

Номер патента: US20090057770A1. Автор: Sung-Man Pang. Владелец: Individual. Дата публикации: 2009-03-05.

Semiconductor device and fabrication method

Номер патента: US20140138769A1. Автор: Masanori Terahara,Takayuki Aoyama,Masaki HANEDA,Yuka Kase. Владелец: Fujitsu Semiconductor Ltd. Дата публикации: 2014-05-22.

Semiconductor device and fabrication method

Номер патента: US20120256264A1. Автор: Masanori Terahara,Takayuki Aoyama,Masaki HANEDA,Yuka Kase. Владелец: Fujitsu Semiconductor Ltd. Дата публикации: 2012-10-11.

Semiconductor device and manufacturing method thereof

Номер патента: US20100140719A1. Автор: Hiroyuki Yamasaki,Kenji Kojima,Hiroshi Naruse,Hideaki Harakawa. Владелец: Individual. Дата публикации: 2010-06-10.

Single lithography methods for interconnect architectures

Номер патента: US20230420346A1. Автор: Yi Yang,Suddhasattwa NAD,Jason Steill,Ali LEHAF. Владелец: Intel Corp. Дата публикации: 2023-12-28.

Method of forming a P-type ohmic contact in group-III nitride semiconductors

Номер патента: US09947537B2. Автор: Hideaki Matsuyama. Владелец: Fuji Electric Co Ltd. Дата публикации: 2018-04-17.

Dicing-tape integrated film for backside of semiconductor and method of manufacturing semiconductor device

Номер патента: US09679797B2. Автор: Akihiro Fukui,Naohide Takamoto,Hiroyuki Hanazono. Владелец: Nitto Denko Corp. Дата публикации: 2017-06-13.

Bonding method, bonding apparatus, and method for manufacturing substrate

Номер патента: US09640507B2. Автор: Youngjoo Lee,Ilyoung Han,Byunggon Kim,Kyoungran KIM,Donggil Shim,Byeongkap Choi. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-05-02.

Gate Structure of Semiconductor Device and Method of Forming Same

Номер патента: US20240379812A1. Автор: Weng Chang,Hsin-Yi Lee,Chi On Chui. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-11-14.

Semiconductor device and fabrication method thereof

Номер патента: US20050269670A1. Автор: Geon-Ook Park. Владелец: Anam Semiconductor Inc. Дата публикации: 2005-12-08.

Method of manufacturing semiconductor device

Номер патента: US11869773B2. Автор: Tomohito KUDO. Владелец: Mitsubishi Electric Corp. Дата публикации: 2024-01-09.

Method of manufacturing semiconductor device

Номер патента: US20220037159A1. Автор: Tomohito KUDO. Владелец: Mitsubishi Electric Corp. Дата публикации: 2022-02-03.

Method of manufacturing semiconductor device

Номер патента: US20200279744A1. Автор: Tomohito KUDO. Владелец: Mitsubishi Electric Corp. Дата публикации: 2020-09-03.

SEMICONDUCTOR DEVICES (as amended)

Номер патента: US20140027824A1. Автор: Byeong-Chan Lee,Jung-Ho Yoo,Keum-seok Park,Woo-Bin Song. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2014-01-30.

Semiconductor device and method of assembling same

Номер патента: US8878348B2. Автор: Huan WANG,Jinsheng Wang,Meiquan HUANG,Naikuo Zhou. Владелец: FREESCALE SEMICONDUCTOR INC. Дата публикации: 2014-11-04.

Semiconductor package and method for fabricating base for semiconductor package

Номер патента: US09922844B2. Автор: Wen-Sung Hsu,Ta-Jen Yu. Владелец: MediaTek Inc. Дата публикации: 2018-03-20.

Semiconductor device and manufacturing method for the same

Номер патента: US09397171B2. Автор: Tomoyuki Furuhata. Владелец: Seiko Epson Corp. Дата публикации: 2016-07-19.

Method of manufacturing a semiconductor device

Номер патента: US6100193A. Автор: Tadashi Iijima,Kyoichi Suguro,Kazuaki Nakajima,Yasushi Akasaka,Shintaro Suehiro. Владелец: Toshiba Corp. Дата публикации: 2000-08-08.

Chip packaging structure and method for manufacturing same

Номер патента: US20230335507A1. Автор: Jin Yang,Chengchung LIN. Владелец: SJ Semiconductor Jiangyin Corp. Дата публикации: 2023-10-19.

Semiconductor device and method for manufacturing same

Номер патента: US20130001785A1. Автор: Yuichi Nakao,Tadao Ohta. Владелец: ROHM CO LTD. Дата публикации: 2013-01-03.

Glass-ceramic-based semiconductor-on-insulator structures and method for making the same

Номер патента: WO2010062876A1. Автор: Kishor P Gadkaree,Steven A Tietje,Joseph F Mach,Christopher P Daigler. Владелец: CORNING INCORPORATED. Дата публикации: 2010-06-03.

Semiconductor device having impurity concentrations for preventing a parasitic channel

Номер патента: US6144047A. Автор: Minoru Higuchi. Владелец: NEC Corp. Дата публикации: 2000-11-07.

Method for manufacturing a semiconductor package and method for testing bonding strength of composite specimen

Номер патента: US20210098277A1. Автор: Hung-Jui Kuo,Hui-Jung TSAI,Chih Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-04-01.

Method for manufacturing a semiconductor package and method for testing bonding strength of composite specimen

Номер патента: US11335579B2. Автор: Hung-Jui Kuo,Hui-Jung TSAI,Chih Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-05-17.

Semiconductor device and method for fabricating the same

Номер патента: US20140042528A1. Автор: Dong-il Park,Jong-Sam Kim,Ae-Gyeong Kim,Kyoung-Eun Uhm,Tae-Cheol Lee,Yong-sang Jeong,Jin-Ha Jeong. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2014-02-13.

Semiconductor device having a saddle fin shaped gate and method for manufacturing the same

Номер патента: US20110306178A1. Автор: Seung Joo Baek. Владелец: Hynix Semiconductor Inc. Дата публикации: 2011-12-15.

Apparatus and method for forming a wire bundle and coupling the wire bundle to a structure

Номер патента: US20190341755A1. Автор: Robert T. Johnson,Jin-Seog Seo,Jesse A. Laplante,Jacky-Vy C. Chau. Владелец: Boeing Co. Дата публикации: 2019-11-07.

Method for fracturing and forming a pattern using shaped beam charged particle beam lithography

Номер патента: US09448473B2. Автор: Michael Tucker,Akira Fujimura. Владелец: D2S Inc. Дата публикации: 2016-09-20.

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Номер патента: US20160103390A1. Автор: Michael Tucker,Akira Fujimura. Владелец: D2S Inc. Дата публикации: 2016-04-14.

Method for making electrically conductive contact with and mechanically fixing a power supply element with a base element of a lamp and corresponding lamp

Номер патента: US20080106178A1. Автор: Roland Rittner. Владелец: Patent Treuhand Gesellschaft fuer Elektrische Gluehlampen mbH. Дата публикации: 2008-05-08.

Patch cord having a plug with contacts having a curved segment extending forwardly of a front edge of a printed circuit board

Номер патента: US09570855B2. Автор: Bryan S. Moffitt,Amid I. Hashim,Wayne D. Larsen,Brian J. Fitzpatrick,Richard A. Schumacher. Владелец: Commscope Inc of North Carolina. Дата публикации: 2017-02-14.

Torque hinge, device having a torque hinge, and use of a torque hinge

Номер патента: CA3189280A1. Автор: Philipp Linder. Владелец: SYSTEC & SOLUTIONS GmbH. Дата публикации: 2022-01-20.

Method for electromagnetic interference (emi) protection for a high voltage connector assembly having a conductive outer housing, with at least a conductive tab, that accommodates therein a seal spring

Номер патента: US20220320804A1. Автор: David Demaratos. Владелец: JST Corp. Дата публикации: 2022-10-06.

A method for electromagnetic interference (emi) protection for a high voltage connector assembly having a conductive outer housing, with at least a conductive tab, that accommodates therein a seal spring

Номер патента: EP4315523A1. Автор: David Demaratos. Владелец: JST Corp. Дата публикации: 2024-02-07.

Silicon particles having a cavity in the shape of a microorganism

Номер патента: US10283767B2. Автор: Andre Moc,Ingo Kerkamm,Imke Heeren,Pallavi Verma. Владелец: ROBERT BOSCH GMBH. Дата публикации: 2019-05-07.

Silicon particles having a cavity in the shape of a microorganism

Номер патента: US20170194642A1. Автор: Andre Moc,Ingo Kerkamm,Imke Heeren,Pallavi Verma. Владелец: ROBERT BOSCH GMBH. Дата публикации: 2017-07-06.

RJ45 socket connector having a terminal module prventing dislodgment of a terminal due to mistaken insertion

Номер патента: US09484691B2. Автор: Sheng-Pin Gao,Hai-Long Fu. Владелец: Foxconn Interconnect Technology Ltd. Дата публикации: 2016-11-01.

Semiconductor apparatus and method for manufacturing semiconductor apparatus

Номер патента: US20160268412A1. Автор: Toshihiro Ohki. Владелец: Fujitsu Ltd. Дата публикации: 2016-09-15.

Semiconductor device and method for manufacturing the same

Номер патента: US09601631B2. Автор: Hiromichi Godo. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2017-03-21.

Method for manufacturing a semiconductor device

Номер патента: US09806187B2. Автор: Martin Poelzl. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2017-10-31.

Semiconductor device and manufacturing method thereof

Номер патента: US20080153212A1. Автор: Manabu Takei. Владелец: Fuji Electric Holdings Ltd. Дата публикации: 2008-06-26.

Method for producing semiconductor element

Номер патента: US20210327722A1. Автор: Toshimasa Hara,Motohisa Kado,Katsunori Danno,Hayate Yamano. Владелец: Toyota Motor Corp. Дата публикации: 2021-10-21.

Semiconductor device and method of manufacturing the same

Номер патента: US09837427B2. Автор: Masaaki Shinohara. Владелец: Renesas Electronics Corp. Дата публикации: 2017-12-05.

Method of manufacturing a semiconductor device having a rectifying junction at the side wall of a trench

Номер патента: US09608092B2. Автор: Wolfgang Werner,Roland Rupp,Hans-Joachim Schulze,Frank Pfirsch,Jens Konrath. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2017-03-28.

Structure and manufacturing method of semiconductor device having uneven surface at memory cell capacitor part

Номер патента: US6608344B2. Автор: Tomohiko Higashino. Владелец: NEC Electronics Corp. Дата публикации: 2003-08-19.

Structure and manufacturing method of semiconductor device having uneven surface at memory cell capacitor part

Номер патента: US6514812B2. Автор: Tomohiko Higashino. Владелец: NEC Corp. Дата публикации: 2003-02-04.

Structure and manufacturing method of semiconductor device having uneven surface at memory cell capacitor part

Номер патента: US20010008789A1. Автор: Tomohiko Higashino. Владелец: NEC Corp. Дата публикации: 2001-07-19.

Semiconductor light-emitting device having a photonic crystal pattern formed thereon, and method for manufacturing same

Номер патента: US09806231B2. Автор: Taegeun Kim,Homyoung An,Jaein Sim. Владелец: Intellectual Discovery Co Ltd. Дата публикации: 2017-10-31.

Method of fabricating capacitor for semiconductor device

Номер патента: US6190993B1. Автор: Byung Jae Choi,Soo Jin Seo. Владелец: Hyundai Electronics Industries Co Ltd. Дата публикации: 2001-02-20.

Semiconductor device having a breakdown voltage holding region

Номер патента: US09698216B2. Автор: Yuki Nakano. Владелец: ROHM CO LTD. Дата публикации: 2017-07-04.

Semiconductor Device And Method For Manufacturing The Same

Номер патента: US20150311352A1. Автор: Shunpei Yamazaki. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2015-10-29.

Semiconductor device and method for manufacturing the same

Номер патента: US09496416B2. Автор: Shunpei Yamazaki. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2016-11-15.

Semiconductor device and a manufacturing method thereof

Номер патента: US8395203B2. Автор: Yasushi Ishii,Hiraku Chakihara. Владелец: Renesas Electronics Corp. Дата публикации: 2013-03-12.

Method for manufacturing silicon-coated copper, silicon-coated anti-oxidation copper using same, and semiconductor device using same

Номер патента: EP4350026A1. Автор: Se Young Jeong,Su Jae Kim. Владелец: University Industry Cooperation Foundation of Pusan National University. Дата публикации: 2024-04-10.

Semiconductor device and manufacturing method thereof

Номер патента: US7411260B2. Автор: Hiroyuki Enomoto,Shuntaro Machida,Taro Asai. Владелец: HITACHI LTD. Дата публикации: 2008-08-12.

Semiconductor device and manufacturing method thereof

Номер патента: US20080079099A1. Автор: Hiroyuki Enomoto,Shuntaro Machida,Taro Asai. Владелец: HITACHI LTD. Дата публикации: 2008-04-03.

Detection and Reduction of Dielectric Breakdown in Semiconductor Devices

Номер патента: US20080211500A1. Автор: Masayasu Miyata,William A. Goddard,Jamil Tahir-Kheli. Владелец: Individual. Дата публикации: 2008-09-04.

Detection and reduction of dielectric breakdown in semiconductor devices

Номер патента: WO2005031850A3. Автор: William A Goddard Iii,Masayasu Miyata,Jamil Tahir-Kheli. Владелец: Jamil Tahir-Kheli. Дата публикации: 2006-01-05.

Detection and reduction of dielectric breakdown in semiconductor devices

Номер патента: US7943401B2. Автор: William A. Goddard, Iii,Masayasu Miyata,Jamil Tamir-Kheli. Владелец: California Institute of Technology CalTech. Дата публикации: 2011-05-17.

Resin composition, resin film, method for producing resin film, method for producing semiconductor device, and semiconductor device

Номер патента: US20170283581A1. Автор: Michihiro Sugo,Kazunori Kondo,Yoichiro Ichioka. Владелец: Shin Etsu Chemical Co Ltd. Дата публикации: 2017-10-05.

Semiconductor device

Номер патента: US20050236676A1. Автор: Tohru Ueno. Владелец: Individual. Дата публикации: 2005-10-27.

Semiconductor integrated circuit device, method for manufacturing the same, and logical circuit

Номер патента: US5747847A. Автор: Koichiro Mashiko,Kimio Ueda,Hiroyuki Morinaka. Владелец: Mitsubishi Electric Corp. Дата публикации: 1998-05-05.

Integrated semiconductor structure and method for making the same

Номер патента: US20240313088A1. Автор: Boting Liu,Shenghou LIU,Wenbi Cai,Xiguo SUN. Владелец: Xiamen Sanan Integrated Circuit Co Ltd. Дата публикации: 2024-09-19.

Light emitting semiconductor device having multilayer structure

Номер патента: US5296718A. Автор: Shigeo Fujita,Shizuo Fujita. Владелец: Seiwa Electric Mfg Co Ltd. Дата публикации: 1994-03-22.

Structures and methods for reducing stress in three-dimensional memory device

Номер патента: US20210050446A1. Автор: Jian Hua SUN,Ji XIA,Sizhe Li,Qinxiang Wei. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-02-18.

Method for detecting EPI induced buried layer shifts in semiconductor devices

Номер патента: US20060038553A1. Автор: Xiaoju Wu,Qingfeng Wang,Xinfen Chen,John Arch. Владелец: Texas Instruments Inc. Дата публикации: 2006-02-23.

Power semiconductor device and method of manufacturing the same

Номер патента: US8450183B2. Автор: Atsushi Narazaki,Kaoru Motonami,Ryoichi Fujii,Shigeto Honda. Владелец: Mitsubishi Electric Corp. Дата публикации: 2013-05-28.

Method of manufacturing semiconductor device

Номер патента: US20120244680A1. Автор: Satoshi Hatsukawa. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2012-09-27.

Semiconductor device including line-type active region and method for manufacturing the same

Номер патента: US20120146121A1. Автор: Kyung Do Kim. Владелец: Hynix Semiconductor Inc. Дата публикации: 2012-06-14.

Method of manufacturing semiconductor device

Номер патента: US8551864B2. Автор: Satoshi Hatsukawa. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2013-10-08.

Method for manufacturing semiconductor substrate and composition

Номер патента: US20240255852A1. Автор: Takashi Katagiri,Eiji Yoneda,Masato Dobashi,Hiroyuki Komatsu,Kengo Ehara,Satoshi Dei,Sho YOSHINAKA. Владелец: JSR Corp. Дата публикации: 2024-08-01.

Silicon carbide semiconductor device and method for manufacturing the same

Номер патента: US20240313057A1. Автор: Takeru Suto,Tomoka Suematsu. Владелец: HITACHI LTD. Дата публикации: 2024-09-19.

Semiconductor device and display device including the semiconductor device

Номер патента: US09590111B2. Автор: Shunpei Yamazaki. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2017-03-07.

Method for manufacturing a multiple walled capacitor of a semiconductor device

Номер патента: US5399518A. Автор: Won-Woo Lee,Jeong-gil Lee,Joo-young Yun,Sang-pil Sim,Chul-Ho Shin,Chang-Kyu Hwang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 1995-03-21.

Semiconductor device and manufacturing method thereof

Номер патента: US7262478B2. Автор: Manabu Takei. Владелец: Fuji Electric Holdings Ltd. Дата публикации: 2007-08-28.

Semiconductor device and manufacturing method thereof

Номер патента: US20060049434A1. Автор: Manabu Takei. Владелец: Fuji Electric Holdings Ltd. Дата публикации: 2006-03-09.

Semiconductor device and method for fabricating the same

Номер патента: US5973362A. Автор: Hae Chang Yang,Min Wha Park. Владелец: LG Semicon Co Ltd. Дата публикации: 1999-10-26.

Packaging structure, manufacturing method therefor and semiconductor device

Номер патента: EP4307352A1. Автор: LIANG Chen,Hongwen Li,Kai Tian,Changhao QUAN,Yuxia Wang,Yingdong GUO. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-01-17.

Semiconductor device

Номер патента: US20140015049A1. Автор: Takayuki Oshima,Hiroki Kimura,Tomoyuki Miyoshi,Yohei Yanagida,Kenji MIYAKOSHI. Владелец: HITACHI LTD. Дата публикации: 2014-01-16.

Semiconductor device

Номер патента: US9293578B2. Автор: Takayuki Oshima,Hiroki Kimura,Tomoyuki Miyoshi,Yohei Yanagida,Kenji MIYAKOSHI. Владелец: HITACHI LTD. Дата публикации: 2016-03-22.

Photovoltaic devices with fine-line metallization and methods for manufacture

Номер патента: US09673341B2. Автор: Oliver Schultz-Wittmann,Adrian Bruce Turner,Bonneville Dudgeon Eggleston,Douglas Edward Crafts. Владелец: Tetrasun Inc. Дата публикации: 2017-06-06.

Photovoltaic device having a semiconductor grade silicon layer formed on a metallurgical grade substrate

Номер патента: US5455430A. Автор: Hiroshi Iwata,Keiichi Sano,Shigeru Noguchi. Владелец: Sanyo Electric Co Ltd. Дата публикации: 1995-10-03.

Semiconductor device having semiconductor channel layer and method of manufacturing the same

Номер патента: US20240107744A1. Автор: Hsih-Yang Chiu. Владелец: Nanya Technology Corp. Дата публикации: 2024-03-28.

Semiconductor device having semiconductor channel layer and method of manufacturing the same

Номер патента: US20240107745A1. Автор: Hsih-Yang Chiu. Владелец: Nanya Technology Corp. Дата публикации: 2024-03-28.

Method for manufacturing a semiconductor device

Номер патента: US09847328B2. Автор: Tatsuyoshi MIHARA. Владелец: Renesas Electronics Corp. Дата публикации: 2017-12-19.

Method for manufacturing a semiconductor device

Номер патента: US09608091B2. Автор: Tatsuyoshi MIHARA. Владелец: Renesas Electronics Corp. Дата публикации: 2017-03-28.

Semiconductor device having recess and planarized layers

Номер патента: US20060115987A1. Автор: Trung Doan,Tyler Lowrey. Владелец: Lowrey Tyler A. Дата публикации: 2006-06-01.

Method for producing semiconductor nanoparticle complex, semiconductor nanoparticle complex, and film

Номер патента: US20190189922A1. Автор: Hiroshi ISOJIMA. Владелец: Fujifilm Corp. Дата публикации: 2019-06-20.

Semiconductor device having a polycrystalline silicon IGFET

Номер патента: US09917160B2. Автор: Martin Vielemeyer,Oliver Blank,Martin Poelzl,Andrew Christopher Graeme Wood. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2018-03-13.

Euv resist underlayer film-forming composition

Номер патента: US20230060697A1. Автор: Mamoru Tamura,Hiroyuki Wakayama,Ryuta Mizuochi,Shou SHIMIZU. Владелец: Nissan Chemical Corp. Дата публикации: 2023-03-02.

Semiconductor device having a breakdown voltage holding region

Номер патента: US20160329397A1. Автор: Yuki Nakano. Владелец: ROHM CO LTD. Дата публикации: 2016-11-10.

Semiconductor device having a breakdown voltage holding region

Номер патента: US20160043167A1. Автор: Yuki Nakano. Владелец: ROHM CO LTD. Дата публикации: 2016-02-11.

Method for fabricating nonvolatile ferroelectric memory

Номер патента: US6333201B1. Автор: Ki Hyun Yoon,Ki Young Oh. Владелец: Hyundai Electronics Industries Co Ltd. Дата публикации: 2001-12-25.

Mounting structure and method of mounting semiconductor device

Номер патента: US20010040791A1. Автор: Fumio Mori. Владелец: Individual. Дата публикации: 2001-11-15.

Method of manufacturing tsemiconductor device having bonding structure

Номер патента: US20240074147A1. Автор: Yi-Jen Lo,Chiang-Lin Shih,Hsih-Yang Chiu. Владелец: Nanya Technology Corp. Дата публикации: 2024-02-29.

Multi-stack three-dimensional memory devices and methods for forming the same

Номер патента: EP3867952A1. Автор: Lihong Xiao. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-08-25.

Method for measuring and correcting misregistration between layers in a semiconductor device, and misregistration targets useful therein

Номер патента: US20220199437A1. Автор: YOEL Feler,Roie VOLKOVICH,Liran Yerushalmi,Renan MILO,Moran Zaberchik,David Izraeli. Владелец: KLA Tencor Corp. Дата публикации: 2022-06-23.

Process for forming a semiconductor device substrate

Номер патента: US9820390B2. Автор: Yonggang Li,Islam A. Salama,Mihir K. Roy. Владелец: Intel Corp. Дата публикации: 2017-11-14.

Semiconductor integrated circuit device having reservoir capacitor and method of manufacturing the same

Номер патента: US20150357377A1. Автор: Hae Chan PARK. Владелец: SK hynix Inc. Дата публикации: 2015-12-10.

Display device using semiconductor light emitting elements, and method for manufacturing same

Номер патента: EP4068371A1. Автор: Junghoon Kim,Byungjun Kang. Владелец: LG ELECTRONICS INC. Дата публикации: 2022-10-05.

Semiconductor device and method for controlling semiconductor device

Номер патента: US20230299767A1. Автор: Kohei Hasegawa,Shusuke Kawai,Tsuguhiro TANAKA,Takenori Yasuzumi. Владелец: Toshiba Electronic Devices and Storage Corp. Дата публикации: 2023-09-21.

Silicon carbide semiconductor device

Номер патента: US20240321947A1. Автор: Naoyuki Ohse. Владелец: Fuji Electric Co Ltd. Дата публикации: 2024-09-26.

Semiconductor device

Номер патента: US20240321968A1. Автор: Hiroshi Kono,Shunsuke Asaba. Владелец: Toshiba Electronic Devices and Storage Corp. Дата публикации: 2024-09-26.

Process for forming a semiconductor device substrate

Номер патента: US09820390B2. Автор: Yonggang Li,Islam A. Salama,Mihir K. Roy. Владелец: Intel Corp. Дата публикации: 2017-11-14.

Method for forming a micro-surface structure and for producing a micro-electromechanical component

Номер патента: US09637377B2. Автор: Wolfgang Reinert,Jochen Quenzer,Kai Gruber,Stephan Warnat. Владелец: Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV. Дата публикации: 2017-05-02.

Semiconductor device and method for manufacturing the same

Номер патента: US20240312940A1. Автор: Chih-Wei Wu,Ying-Ching Shih,Hung-Wei TSAI. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-19.

Semiconductor device and method for fabricating the same

Номер патента: US09953685B2. Автор: Chia-Jung Hsu,Wein-Town Sun,Chun-Yuan Lo,Jui-Ming Kuo. Владелец: eMemory Technology Inc. Дата публикации: 2018-04-24.

Protective film detecting method for laser processing

Номер патента: US09689798B1. Автор: Senichi Ryo,Yukinobu OHURA. Владелец: Disco Corp. Дата публикации: 2017-06-27.

Method for manufacturing lateral double-diffused metal oxide semiconductor transistor

Номер патента: US09627513B2. Автор: Meng Wang,Budong You,Zheng Lyu. Владелец: Hangzhou Silergy Semiconductor Technology LTD. Дата публикации: 2017-04-18.

Semiconductor device and manufacturing method thereof

Номер патента: US09496404B2. Автор: Shunpei Yamazaki,Hideyuki Kishida. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2016-11-15.

Optical semiconductor device and method for manufacturing optical semiconductor device

Номер патента: US20050006715A1. Автор: Yukiko Kashiura. Владелец: Toshiba Corp. Дата публикации: 2005-01-13.

Group iii nitride semiconductor single crystal, method for producing the same, self-standing substrate, and semiconductor device

Номер патента: US20140070370A1. Автор: Shiro Yamazaki,Miki Moriyama. Владелец: Toyoda Gosei Co Ltd. Дата публикации: 2014-03-13.

Semiconductor device and method for fabricating the same

Номер патента: US20130015508A1. Автор: Wen-Yueh Jang. Владелец: Winbond Electronics Corp. Дата публикации: 2013-01-17.

Asymmetric finfet in memory device, method of fabricating same and semiconductor device

Номер патента: US20200273863A1. Автор: Rongfu ZHU,Dingyou LIN. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2020-08-27.

Semiconductor device including multiple spacers and a method for preparing the same

Номер патента: US20240258404A1. Автор: Chung-Lin Huang. Владелец: Nanya Technology Corp. Дата публикации: 2024-08-01.

Semiconductor device including multiple spacers and a method for preparing the same

Номер патента: US20240258405A1. Автор: Chung-Lin Huang. Владелец: Nanya Technology Corp. Дата публикации: 2024-08-01.

Apparatus and methods for forming a modulation doped non-planar transistor

Номер патента: US9564490B2. Автор: Gilbert Dewey,Ravi Pillarisetty,Marko Radosavljevic,Jack Kavalieros,Willy Rachmady,Mantu Hudait. Владелец: Intel Corp. Дата публикации: 2017-02-07.

Array substrate and manufacturing method for the same

Номер патента: US20170186651A1. Автор: Longqiang Shi. Владелец: Shenzhen China Star Optoelectronics Technology Co Ltd. Дата публикации: 2017-06-29.

Layout modification method for exposure manufacturing process

Номер патента: US20190131290A1. Автор: Chin-Hsiang Lin,Chun-Kuang Chen,Chih-Tsung Shih,Po-Chung Cheng,Li-Jui Chen,Hung-Wen Cho,Fu-Jye Liang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2019-05-02.

Method for aligning quantum dots and semiconductor device fabricated by using the same

Номер патента: US20020031900A1. Автор: Eun Kim,Kwang Kim,Yong Park. Владелец: Korea Advanced Institute of Science and Technology KAIST. Дата публикации: 2002-03-14.

Semiconductor device and method for manufacturing the same

Номер патента: US20100213617A1. Автор: Seung Bum Kim,Jong Kuk KIM. Владелец: Individual. Дата публикации: 2010-08-26.

Optical apparatus and method for making the same

Номер патента: US20040004276A1. Автор: Kuo-Hsiung Li,F.S. Hsu. Владелец: PixArt Imaging Inc. Дата публикации: 2004-01-08.

Apparatus and methods for forming a modulation doped non-planar transistor

Номер патента: US20170104069A1. Автор: Gilbert Dewey,Ravi Pillarisetty,Marko Radosavljevic,Jack Kavalieros,Willy Rachmady,Mantu Hudait. Владелец: Intel Corp. Дата публикации: 2017-04-13.

Apparatus and methods for forming a modulation doped non-planar transistor

Номер патента: US20160118464A1. Автор: Gilbert Dewey,Ravi Pillarisetty,Marko Radosavljevic,Jack Kavalieros,Willy Rachmady,Mantu Hudait. Владелец: Intel Corp. Дата публикации: 2016-04-28.

Semiconductor device

Номер патента: US20020016043A1. Автор: Shigeki Takayama,Rinya Hosono. Владелец: Toko Inc. Дата публикации: 2002-02-07.

Semiconductor devices and methods of manufacturing thereof

Номер патента: US12094874B2. Автор: Ru-Shang Hsiao,Jung-Chi Jeng,Sung-Hsin Yang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-17.

Array substrate and manufacturing method for the same

Номер патента: US09905470B2. Автор: Longqiang Shi. Владелец: Shenzhen China Star Optoelectronics Technology Co Ltd. Дата публикации: 2018-02-27.

Semiconductor device and method for manufacturing the semiconductor device

Номер патента: US09741805B2. Автор: Takeyoshi Nishimura. Владелец: Fuji Electric Co Ltd. Дата публикации: 2017-08-22.

Three-dimensional memory devices having a single layer channel and methods of making thereof

Номер патента: US9530785B1. Автор: Wei Zhao,Zhenyu Lu,Hiroyuki Ogawa,Raghuveer S. Makala,Rahul Sharangpani,Yingda Dong,Henry Chien,George Matamis,Sateesh KOKA,Somesh Peri,Ching-Huang Lu,Yuichi Ikezono. Владелец: SanDisk Technologies LLC. Дата публикации: 2016-12-27.

Conductive compositions and processes for use in the manufacture of semiconductor devices

Номер патента: US20130234271A1. Автор: Alan Frederick Carroll,Kenneth Warren Hang. Владелец: EI Du Pont de Nemours and Co. Дата публикации: 2013-09-12.

Packaging structure and manufacturing method therefor, and semiconductor device

Номер патента: EP4307367A1. Автор: LIANG Chen,Kai Tian,Mingxing ZUO. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-01-17.

Semiconductor Devices Having Supportive Plating Structures

Номер патента: US20230268290A1. Автор: Uthayarajan A/L Rasalingam,Janice Jia Min Ling. Владелец: Western Digital Technologies Inc. Дата публикации: 2023-08-24.

Semiconductor device and semiconductor device fabrication method

Номер патента: US20230094425A1. Автор: Masanori Shindo. Владелец: Lapis Semiconductor Co Ltd. Дата публикации: 2023-03-30.

Semiconductor device, electronic apparatus, and method for manufacturing semiconductor device

Номер патента: US12074182B2. Автор: Masaki Hatano. Владелец: Sony Semiconductor Solutions Corp. Дата публикации: 2024-08-27.

Semiconductor device

Номер патента: US20100187653A1. Автор: Seiji Otake. Владелец: Sanyo Semiconductor Co Ltd. Дата публикации: 2010-07-29.

Semiconductor packaging structure and method for forming the same

Номер патента: US09620468B2. Автор: Chang-Ming Lin,Yu-Juan Tao. Владелец: Tongfu Microelectronics Co Ltd. Дата публикации: 2017-04-11.

Semiconductor device and method for manufacturing the same

Номер патента: US20170294400A1. Автор: Kaoru Yasuda,Motoharu Haga. Владелец: ROHM CO LTD. Дата публикации: 2017-10-12.

Apparatuses and methods for semiconductor circuit layout

Номер патента: US20180175017A1. Автор: Takashi Ishihara,Yasuhiko Tanuma. Владелец: Micron Technology Inc. Дата публикации: 2018-06-21.

Apparatuses and methods for semiconductor circuit layout

Номер патента: US20190348493A1. Автор: Takashi Ishihara,Yasuhiko Tanuma. Владелец: Micron Technology Inc. Дата публикации: 2019-11-14.

Semiconductor device including a columnar intermediate region and manufacturing method thereof

Номер патента: US8058686B2. Автор: Tomomi Yamanobe. Владелец: Oki Electric Industry Co Ltd. Дата публикации: 2011-11-15.

Leadframes for improved moisture reliability and enhanced solderability of semiconductor devices

Номер патента: US20070120233A1. Автор: John Tellkamp. Владелец: Texas Instruments Inc. Дата публикации: 2007-05-31.

Thin film formation method and manufacturing method for semiconductor device

Номер патента: US20090253264A1. Автор: Junichi Horie. Владелец: Mitsubishi Electric Corp. Дата публикации: 2009-10-08.

Method for producing semiconductor light-emitting device

Номер патента: US09972756B2. Автор: Masayuki Takashima,Gaku YOSHIKAWA. Владелец: Sumitomo Chemical Co Ltd. Дата публикации: 2018-05-15.

Apparatuses and methods for semiconductor circuit layout

Номер патента: US09929135B2. Автор: Takashi Ishihara,Yasuhiko Tanuma. Владелец: Micron Technology Inc. Дата публикации: 2018-03-27.

Semiconductor structures and methods for multi-level band gap energy of nanowire transistors to improve drive current

Номер патента: US09634132B2. Автор: Jean-Pierre Colinge,Tsung-Hsing Yu,Chia-Wen Liu,Yeh Hsu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-04-25.

Simulation method for semiconductor fabrication process and method for manufacturing semiconductor device

Номер патента: US11982980B2. Автор: Jinwoo Kim,Sanghoon MYUNG,Wonik JANG,Changwook Jeong,Jisu Ryu,Yongwoo JEON,Kanghyun Baek. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-05-14.

Back structure of solar cell, and solar cell with back structure

Номер патента: EP4224532A1. Автор: Hongbo Li,Wei Shan,Wei-Chih Hsu,Sheng HE,Xinlin Zeng,Yingcai Zhao. Владелец: Chint New Energy Technology Co Ltd. Дата публикации: 2023-08-09.

Back Structure of Solar Cell, and Solar Cell with Back Structure

Номер патента: US20240014329A1. Автор: Hongbo Li,Wei Shan,Wei-Chih Hsu,Sheng HE,Xinlin Zeng,Yingcai Zhao. Владелец: Chint New Energy Technology Co Ltd. Дата публикации: 2024-01-11.

Semiconductor device including vertical supporting structure

Номер патента: US20240105715A1. Автор: Wen-Chieh Wang. Владелец: Nanya Technology Corp. Дата публикации: 2024-03-28.

Semiconductor device including vertical supporting structure

Номер патента: US20240105714A1. Автор: Wen-Chieh Wang. Владелец: Nanya Technology Corp. Дата публикации: 2024-03-28.

Semiconductor devices and methods of manufacture thereof

Номер патента: EP1792335A2. Автор: Steven T. Philips IP & Standards GmbH PEAKE. Владелец: NXP BV. Дата публикации: 2007-06-06.

Semiconductor device structure including a bonding structure

Номер патента: US20240153900A1. Автор: Shing-Yih Shih,Sheng-Fu Huang. Владелец: Nanya Technology Corp. Дата публикации: 2024-05-09.

Semiconductor device and manufacturing method of same

Номер патента: US9343395B2. Автор: Hiroshi Tsukamoto,Akira Yajima,Hiromi Shigihara,Hisao Shigihara. Владелец: Renesas Electronics Corp. Дата публикации: 2016-05-17.

Semiconductor device and manufacturing method of same

Номер патента: US20140021618A1. Автор: Hiroshi Tsukamoto,Akira Yajima,Hiromi Shigihara,Hisao Shigihara. Владелец: Renesas Electronics Corp. Дата публикации: 2014-01-23.

Semiconductor device and manufacturing method of same

Номер патента: US20160240484A1. Автор: Hiroshi Tsukamoto,Akira Yajima,Hiromi Shigihara,Hisao Shigihara. Владелец: Renesas Electronics Corp. Дата публикации: 2016-08-18.

Apparatus and methods for forming a modulation doped non-planar transistor

Номер патента: US8633471B2. Автор: Gilbert Dewey,Ravi Pillarisetty,Marko Radosavljevic,Jack Kavalieros,Willy Rachmady,Mantu Hudait. Владелец: Intel Corp. Дата публикации: 2014-01-21.

Methods and apparatus for measuring semiconductor device overlay using X-ray metrology

Номер патента: US09885962B2. Автор: Andrei V. Shchegrov,Andrei Veldman,Walter D. Mieher,Michael S. Bakeman. Владелец: KLA Tencor Corp. Дата публикации: 2018-02-06.

Methods of forming conductive materials on semiconductor devices, and methods of forming electrical interconnects

Номер патента: US09768134B2. Автор: Anilkumar Chandolu,Kenneth N. Hagen. Владелец: Micron Technology Inc. Дата публикации: 2017-09-19.

Semiconductor device and manufacturing method of same

Номер патента: US09704805B2. Автор: Hiroshi Tsukamoto,Akira Yajima,Hiromi Shigihara,Hisao Shigihara. Владелец: Renesas Electronics Corp. Дата публикации: 2017-07-11.

Semiconductor integrated circuit device having vertical channel and method of manufacturing the same

Номер патента: US09640587B2. Автор: Kang Sik Choi. Владелец: SK hynix Inc. Дата публикации: 2017-05-02.

Method of making semiconductor device with floating bate

Номер патента: US5633184A. Автор: Katsuhiko Tamura,Yukari Imai,Naoko Otani. Владелец: Mitsubishi Electric Corp. Дата публикации: 1997-05-27.

Method for forming super-junction corner and termination structure with graded sidewalls

Номер патента: US20210257461A1. Автор: Madhur Bobde,Lingpeng Guan,Karthik Padmanabhan. Владелец: Alpha and Omega Semiconductor Cayman Ltd. Дата публикации: 2021-08-19.

Semiconductor device having a memory cell portion and a logic portion

Номер патента: US5608241A. Автор: Osamu Matsumoto,Masayuki Yoshida,Sachiko Shibuya,Nobuyoshi Chida. Владелец: Toshiba Corp. Дата публикации: 1997-03-04.

Method for the fabrication of bonding solder layers on metal bumps with improved coplanarity

Номер патента: US20130052817A1. Автор: Tim Hsiao. Владелец: WIN Semiconductors Corp. Дата публикации: 2013-02-28.

Semiconductor device and forming method thereof

Номер патента: US20230301064A1. Автор: Deyuan Xiao,GuangSu SHAO,Youming Liu,Yunsong QIU. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-09-21.

Method for controlling resistivity and n-type silicon single crystal

Номер патента: US20170260645A1. Автор: Kiyotaka Takano,Ryoji Hoshi,Hiroyuki Kamada. Владелец: Shin Etsu Handotai Co Ltd. Дата публикации: 2017-09-14.

Resist underlayer film-forming composition comprising polymer having structural unit having urea linkage

Номер патента: US12025915B2. Автор: Tokio Nishita,Rikimaru Sakamoto,Yuichi Goto,Gun Son. Владелец: Nissan Chemical Corp. Дата публикации: 2024-07-02.

Film pattern and methods for forming the same

Номер патента: US12087742B2. Автор: Ying-Chieh Chen. Владелец: Skiileux Electricity Inc. Дата публикации: 2024-09-10.

Method for manufacturing light emitting element

Номер патента: US09640714B2. Автор: Hiroaki Tamemoto,Chihiro Juasa. Владелец: Nichia Corp. Дата публикации: 2017-05-02.

Measuring semiconductor device features using stepwise optical metrology

Номер патента: US09482519B2. Автор: Yunlin Zhang. Владелец: Globalfoundries Inc. Дата публикации: 2016-11-01.

Method for manufacturing multilayer printed wiring board

Номер патента: US09420708B2. Автор: Toshiaki HIBINO,Takema Adachi. Владелец: Ibiden Co Ltd. Дата публикации: 2016-08-16.

Method for developing resist, method for forming a resist pattern, method for producing a mold, and developing fluid utilized in these methods

Номер патента: US09417530B2. Автор: Toru Tsuchihashi,Tomokazu Seki,Ikuo Takano. Владелец: Fujifilm Corp. Дата публикации: 2016-08-16.

Method of manufacturing a semiconductor device

Номер патента: US20090142884A1. Автор: Kaoru Katoh. Владелец: Shin Etsu Chemical Co Ltd. Дата публикации: 2009-06-04.

Semiconductor device and method of manufacturing the same

Номер патента: US6835999B2. Автор: Fumio Sato,Mitsuhiro Omura. Владелец: Toshiba Corp. Дата публикации: 2004-12-28.

Semiconductor device and method of manufacturing the same

Номер патента: US20040012073A1. Автор: Fumio Sato,Mitsuhiro Omura. Владелец: Individual. Дата публикации: 2004-01-22.

Semiconductor devices and methods for forming a semiconductor device

Номер патента: US10276655B2. Автор: Armin Willmeroth. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2019-04-30.

Semiconductor device and semiconductor module

Номер патента: US20240186366A1. Автор: Kazumasa Nishio,Bungo Tanaka,Kosei OSADA. Владелец: ROHM CO LTD. Дата публикации: 2024-06-06.

Semiconductor Devices and Methods for Forming a Semiconductor Device

Номер патента: US20170345893A1. Автор: Armin Willmeroth. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2017-11-30.

Method for forming coating film for lithography

Номер патента: US9502247B2. Автор: Tsutomu Ogihara,Taku Morisawa. Владелец: Shin Etsu Chemical Co Ltd. Дата публикации: 2016-11-22.

Two-terminal memory device, a method for manufacturing the same, and a semiconductor device including a two-terminal memory device

Номер патента: US12022661B2. Автор: Sang-Hyeok Yang,Jong-Seok Lee,Ui-Yeon Won. Владелец: Kia Corp. Дата публикации: 2024-06-25.

Method for doping a semiconductor material and method for manufacturing solar cells

Номер патента: WO2012063078A1. Автор: Jonathan Major,Kenneth Durose,Yuri Proskuryakov. Владелец: THE UNIVERSITY OF LIVERPOOL. Дата публикации: 2012-05-18.

Semiconductor device having a low-resistance bus interconnect, method of manufacturing same, and display apparatus employing same

Номер патента: US20070087477A1. Автор: Tamaki Toba. Владелец: NEC Corp. Дата публикации: 2007-04-19.

Method for producing an optoelectronic semiconductor component and optoelectronic semiconductor component

Номер патента: US20240234626A9. Автор: Jens Ebbecke,Hans-Joachim Meyer,Markus Graul,Richard Floeter,Kristina Schelestow. Владелец: Ams Osram International GmbH. Дата публикации: 2024-07-11.

Method for producing an optoelectronic semiconductor component and optoelectronic semiconductor component

Номер патента: US20240136468A1. Автор: Jens Ebbecke,Hans-Joachim Meyer,Markus Graul,Richard Floeter,Kristina Schelestow. Владелец: Ams Osram International GmbH. Дата публикации: 2024-04-25.

Composition for forming film for semiconductor, laminate, and substrate laminate

Номер патента: US20240371713A1. Автор: Yuzo Nakamura,Yasuhisa Kayaba,Takashi Kozeki. Владелец: Mitsui Chemicals Inc. Дата публикации: 2024-11-07.

Nonvolatile memory device and method for fabricating the same

Номер патента: US09735170B2. Автор: Kihyun Kim,Siyoung Choi,Hansoo Kim,Myoungbum Lee,JinGyun Kim,Soodoo Chae,HuiChang Moon,Hoosung Cho. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-08-15.

Semiconductor device and method of manufacturing the same

Номер патента: US09607956B2. Автор: Masahiro Matsumoto,Masahiko Fujisawa,Kazuyoshi Maekawa. Владелец: Renesas Electronics Corp. Дата публикации: 2017-03-28.

Method for manufacturing thin-film transistor substrate

Номер патента: US09496374B2. Автор: Yuting Chen,Zhe HU,Chenglung Chiang,Polin CHEN,Tzuchieh Lai,Runze Zhan,Chengyuan Dong. Владелец: Shenzhen China Star Optoelectronics Technology Co Ltd. Дата публикации: 2016-11-15.

Semiconductor device and method of manufacturing the same

Номер патента: US09406628B2. Автор: Masahiro Matsumoto,Masahiko Fujisawa,Kazuyoshi Maekawa. Владелец: Renesas Electronics Corp. Дата публикации: 2016-08-02.

Method for producing a high-temperature and temperature-change resistant connection between a semiconductor module and a connection partner

Номер патента: US09287232B2. Автор: Ronald Eisele,Mathias Kock. Владелец: Danfoss Silicon Power GmbH. Дата публикации: 2016-03-15.

Semiconductor laser diode and method for manufacturing the same

Номер патента: US5445993A. Автор: MIN Yang,Hyung S. Ahn,Min S. No,Sang K. Si,Won T. Choi,Joo O. Seo,Jin H. Lim. Владелец: Gold Star Co Ltd. Дата публикации: 1995-08-29.

Method for manufacturing semiconductor light emitting element, semiconductor light emitting element and lamp provided with the semiconductor light emitting element

Номер патента: EP2012370A1. Автор: Kenzo c/o SHOWA DENKO K.K. HANAWA,Yasunori c/o SHOWA DENKO K.K. YOKOYAMA. Владелец: Showa Denko KK. Дата публикации: 2009-01-07.

Kit, composition for forming underlayer film for imprinting, pattern forming method, and method for manufacturing semiconductor device

Номер патента: US20200373167A1. Автор: Yuichiro Goto,Akihiro HAKAMATA,Naoya SHIMOJU. Владелец: Fujifilm Corp. Дата публикации: 2020-11-26.

Method for manufacturing a surface emitting type AlGaAs/GaAs semiconductor laser diode

Номер патента: US4950622A. Автор: Tae Kyung Yoo,Young Se Kwon. Владелец: Korea Advanced Institute of Science and Technology KAIST. Дата публикации: 1990-08-21.

Resistor and method for making same

Номер патента: US09916921B2. Автор: Thomas L. Veik,Clark L. Smith,Todd L. Wyatt,Thomas L. Bertsch,Rodney Brune. Владелец: Vishay Dale Electronics LLC. Дата публикации: 2018-03-13.

Edge emitting semicondcutor laser diode; method for producing a semicondcutor laser device and semicondcutor laser device

Номер патента: WO2024046669A1. Автор: Sven GERHARD,Mariel Grace Jama. Владелец: Ams-Osram International Gmbh. Дата публикации: 2024-03-07.

Method for producing a surface-emitting laser

Номер патента: US5416044A. Автор: Toyoji Chino,Kenichi Matsuda. Владелец: Matsushita Electric Industrial Co Ltd. Дата публикации: 1995-05-16.

Connector terminal and method for producing connector terminal

Номер патента: US09590341B2. Автор: Takahiro Sunaga,Yoshifumi Saka. Владелец: AutoNetworks Technologies Ltd. Дата публикации: 2017-03-07.

Method for connecting a molybdenum-based alloy structure to a structure formed from a more ductile alloy, and related articles

Номер патента: US5930332A. Автор: Mark Gilbert Benz,Herman Arthur Nied,Michael Robert Eggleston. Владелец: General Electric Co. Дата публикации: 1999-07-27.

Semiconductor device and method for controlling amplitude of signal in the semiconductor device

Номер патента: US20210058080A1. Автор: Seung Jin Kim,Seung Hyun Oh,Wan Kim,Byung Ki HAN. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-02-25.

Ink composition for forming light shielding film of organic semiconductor device, method for forming light shielding film, and organic transistor device having light shielding film

Номер патента: US20120032309A1. Автор: Masanori Kasai,Hideki Etori,Hiroshi Isozumi. Владелец: DIC Corp. Дата публикации: 2012-02-09.

Apparatus and methods for providing location-based services to a mobile computing device having a dual processor architecture

Номер патента: WO2008054493A2. Автор: Wen Zhao,Arun Mathias,Eric Liu,Janell Paulson,Craig Hamilton,Isabel Ge,Dan Myers,Igor Braslavsky,Perry Zabaldo,Darren Lee Ang. Владелец: PALM, INC.. Дата публикации: 2008-05-08.

Apparatus and methods for providing location-based services to a mobile computing device having a dual processor architecture

Номер патента: EP2059766A2. Автор: Wen Zhao,Arun Mathias,Eric Liu,Janell Paulson,Craig Hamilton,Isabel Ge,Dan Myers,Igor Braslavsky,Perry Zabaldo,Darren Lee Ang. Владелец: Palm Inc. Дата публикации: 2009-05-20.

System and method for obfuscating opcode commands in a semiconductor device

Номер патента: US20210351922A1. Автор: Jan-Peter Schat,Fabrice Poulard,Andreas Lentz. Владелец: NXP BV. Дата публикации: 2021-11-11.

Method for encoding contactless communication data from a transponder to a reader via charge modulation, in the form of a set of patterns and device for implementing same

Номер патента: US20120234928A1. Автор: Jacques Reverdy,Thierry Thomas,Elisabeth Crochon,Florian Pebay-Peyroula. Владелец: Commissariat a lEnergie Atomique et aux Energies Alternatives CEA. Дата публикации: 2012-09-20.

An Automatic Search Method for a Structural Mode Signal of a Chipless RFID Tag

Номер патента: US20210248329A1. Автор: Yi Fan,Tianhai Chang,Xiongying LIU,Nuanfeng ZHANG,Yunjiong QIN. Владелец: South China University of Technology SCUT. Дата публикации: 2021-08-12.

Method for performing a face tracking function and an electric device having the same

Номер патента: US09858470B2. Автор: Chung-Ko Chiu,Ming-Che Kang. Владелец: HTC Corp. Дата публикации: 2018-01-02.

System, apparatus, and method for forming a secured network using tag devices having a random identification number associated therewith

Номер патента: WO2017155988A1. Автор: Michael R. Arneson,William R. Bandy. Владелец: Matrics2, Llc. Дата публикации: 2017-09-14.

Methods for use in conjunction with a handheld wireless communication device having an adjunct device coupled thereto

Номер патента: US20120295545A1. Автор: John W. Howard,Richard Cutler,Robert M. Kennard. Владелец: THL Holding Co LLC. Дата публикации: 2012-11-22.

Systems and methods for coordinating and administering self tests of smart home devices having audible outputs

Номер патента: US20160364978A1. Автор: Dietrich Ho,Tyler MOORE,Daniel Adam Warren,Edwin H. Satterthwaite, Jr.,Andrew W. Goldenson,Steven Clark,Ben Manuto,Julia DeIuliis,Nicholas Unger WEBB,Lawrence Frederick Heyl. Владелец: Google LLC. Дата публикации: 2016-12-15.

Systems and methods for coordinating and administering self tests of smart home devices having audible outputs

Номер патента: US09898922B2. Автор: Dietrich Ho,Tyler MOORE,Daniel Adam Warren,Edwin H. Satterthwaite, Jr.,Andrew W. Goldenson,Steven Clark,Julia Deluliis,Ben Manuto,Nicholas Unger WEBB,Lawrence Frederick Heyl. Владелец: Google LLC. Дата публикации: 2018-02-20.

Systems and methods for coordinating and administering self tests of smart home devices having audible outputs

Номер патента: US09886843B2. Автор: Dietrich Ho,Tyler MOORE,Daniel Adam Warren,Edwin H. Satterthwaite, Jr.,Andrew W. Goldenson,Steven Clark,Julia Deluliis,Ben Manuto,Nicholas Unger WEBB,Lawrence Frederick Heyl. Владелец: Google LLC. Дата публикации: 2018-02-06.

Systems and methods for coordinating and administering self tests of smart home devices having audible outputs

Номер патента: US09454893B1. Автор: Dietrich Ho,Tyler MOORE,Daniel Adam Warren,Edwin H. Satterthwaite, Jr.,Andrew W. Goldenson,Steven Clark,Julia Deluliis,Ben Manuto,Nicholas Unger WEBB,Lawrence Frederick Heyl. Владелец: Google LLC. Дата публикации: 2016-09-27.

Method for detecting hysteresis characteristic of comparator and semiconductor device

Номер патента: US09425776B2. Автор: Yanfei Chen. Владелец: Fujitsu Ltd. Дата публикации: 2016-08-23.

Structures and methods for deriving stable physical unclonable functions from semiconductor devices

Номер патента: US11962709B1. Автор: Eric D. Hunt-Schroeder,Darren Anand,Dale Pontius. Владелец: Marvell Asia Pte Ltd. Дата публикации: 2024-04-16.

Method for performing a bandwidth test for communications from a first network station to a second network station of a communication network and corresponding apparatuses for performing the method steps and corresponding computer program products

Номер патента: US09906427B2. Автор: Eduard Siemens,Dimitry Kachan. Владелец: HOCHSCHULE ANHALT. Дата публикации: 2018-02-27.

Display device for a motor vehicle, method for displaying display content on an extendable screen and motor vehicle having a display device

Номер патента: US20240365487A1. Автор: Jacques Helot,Christian Wall. Владелец: Audi AG. Дата публикации: 2024-10-31.

Method for matching the signal transmission between two electronic devices, and arrangement having a computer system and a peripheral device

Номер патента: US09436648B2. Автор: Robert Depta. Владелец: Fujitsu Ltd. Дата публикации: 2016-09-06.

Electronic devices having a layer overlying an edge of a different layer and a process for forming the same

Номер патента: US7572655B2. Автор: Matthew Stevenson,Gang Yu,Frank P. Uckert,Matthew Dewey Hubert,Patrick Hahn. Владелец: EI Du Pont de Nemours and Co. Дата публикации: 2009-08-11.

Method for encoding contactless communication data from a transponder to a reader via charge modulation, in the form of a set of patterns and device for implementing same

Номер патента: US8800878B2. Автор: Jacques Reverdy,Thierry Thomas,Elisabeth Crochon,Florian Pebay-Peyroula. Владелец: Commissariat a lEnergie Atomique et aux Energies Alternatives CEA. Дата публикации: 2014-08-12.

Method for providing the functionality of multiple microservices and/or the functionality of multiple software containers by means of a cloud infrastructure, system or cloud infrastructure, secret management instance, program and computer-readable medium

Номер патента: EP4435647A1. Автор: Frank Sudholt,Alexander Stumpf. Владелец: DEUTSCHE TELEKOM AG. Дата публикации: 2024-09-25.

Combined capacitive sensor and heating apparatus, method for operating a sensor and heating apparatus, steering input apparatus assembly having a sensor and heating apparatus, and vehicle having a steering input apparatus assembly

Номер патента: US20220371647A1. Автор: Sascha Staude,Georg Poslowsky,Raphael MACK,Iordanis Tsinistidis,Markus Hartmueller. Владелец: VALEO SCHALTER UND SENSOREN GMBH. Дата публикации: 2022-11-24.

Method of designing a datapath in a semiconductor component, and semiconductor component having a datapath

Номер патента: WO2021259476A1. Автор: Mustafa Badaroglu. Владелец: Huawei Technologies Co., Ltd.. Дата публикации: 2021-12-30.

Apparatus, systems and methods for accessing and synchronizing presentation of media content and supplemental media rich content in response to selection of a presented object

Номер патента: US09544660B2. Автор: Daniel Overbaugh,John Anthony Card,Kate Landow. Владелец: ECHOSTAR TECHNOLOGIES LLC. Дата публикации: 2017-01-10.

Method for gluing components, forming a temperature-resistant adhesive layer

Номер патента: US20110221308A1. Автор: Roland Mueller,Gerhard Hueftle,Irene Jennrich,Patrick Stihler. Владелец: Individual. Дата публикации: 2011-09-15.

Systems and methods for the generation of event opportunities for display on devices having differing form factors

Номер патента: US20230362656A1. Автор: Vladimir Jovanovic. Владелец: Sb22 Inc. Дата публикации: 2023-11-09.

Systems and methods for the generation of event opportunities for display on devices having differing form factors

Номер патента: WO2023220020A1. Автор: Vladimir Jovanovic. Владелец: SB22, Inc.. Дата публикации: 2023-11-16.

Method for controlling the speed of a three-phase permanent magnet machine having a soft starter by means of a controller cascade, and three-phase machine

Номер патента: US11637514B2. Автор: Heiko Zatocil,Hauke Nannen. Владелец: SIEMENS AG. Дата публикации: 2023-04-25.

Solid state image pickup device having a capacitor structure made up of a plurality of capacitors

Номер патента: US09661246B2. Автор: Keiji Mabuchi,Toshifumi Wakano. Владелец: Sony Corp. Дата публикации: 2017-05-23.

Method for monitoring a radio frequency receiver and semiconductor device

Номер патента: US20240039686A1. Автор: Stefan Schmalzl,Andreas Schwarz,Thomas Josef BAUERNFEIND,Thomas Obermueller,Martin Louda,Furqan Farooq FAZILI. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2024-02-01.

Systems and methods for managing data generation, storage, and verification in a distributed system having a committee of validator nodes

Номер патента: US11907174B2. Автор: Hui Zhou,Weiqiang Lu,Yangrui GUO,Qiandong Yang,Sheng Zeng. Владелец: Cypherium Blockchain Inc. Дата публикации: 2024-02-20.

Rotating electrical machine having a structure for support of a bus bar and terminal block

Номер патента: US09882444B2. Автор: Masaya Inoue,Tadashi Murakami,Kouichi Ojima. Владелец: Mitsubishi Electric Corp. Дата публикации: 2018-01-30.

Method for performing a bandwidth test for comminications from a first network station to a second network station of a communication network and corresponding apparatuses for performing the method steps and corresponding computer program products

Номер патента: CA2915487C. Автор: Eduard Siemens,Dimitry Kachan. Владелец: HOCHSCHULE ANHALT. Дата публикации: 2018-09-11.

Apparatus and method for contacting a customer support line on customer's behalf and having a customer support representative contact the customer

Номер патента: US20060041841A1. Автор: Nagendran Parasu. Владелец: Cisco Technology Inc. Дата публикации: 2006-02-23.

Electronic device having internal charge regulator for controlling application of a charging current thereto and associated method therefor

Номер патента: CA2140535C. Автор: David Mark Demuro. Владелец: Motorola Inc. Дата публикации: 1998-08-11.

Method for enabling or setting up to operatively use a customer premises equipment with a broadband access network of a telecommunications network, system or broadband access network, customer premises equipment, access configuration entity or functionality, program and computer-readable medium

Номер патента: EP4336777A1. Автор: Thomas Haag,Dirk Lehmann,Wolfgang Hurst,Fabian Dr. SCHNEIDER,Samir Dorhmi. Владелец: DEUTSCHE TELEKOM AG. Дата публикации: 2024-03-13.

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Номер патента: EP4198201A1. Автор: Anton Mahler,Marc Kappel,Henrik Lindemann,Dennis Ebbighausen. Владелец: VOLVO CONSTRUCTION EQUIPMENT AB. Дата публикации: 2023-06-21.

Method for processing a registration request from a terminal of a communication network user, method for providing a table of emergency numbers, method for managing a table of emergency numbers, devices, local facility, control facility, facility for managing the mobility of a user terminal, and corresponding system and computer programs

Номер патента: US20240039967A1. Автор: Jose Doree,Mickael Allain. Владелец: ORANGE SA. Дата публикации: 2024-02-01.

Method for retrieving a data stream from a server and transportation vehicle having a network access point

Номер патента: US20210105336A1. Автор: Andreas Kwoczek. Владелец: VOLKSWAGEN AG. Дата публикации: 2021-04-08.

Method for generating a radio map of an environment and radio communication system being controlled on the basis of a radio map generated by this method

Номер патента: WO2009144030A2. Автор: Octavian Sarca,Joachim Bamberger,Alexander Baumann,Marian Grigoras,Andrei Szabo,Christoph Flossmann,Hildegard Wiggenhorn. Владелец: SIEMENS AKTIENGESELLSCHAFT. Дата публикации: 2009-12-03.

Image reading apparatus and method for generating image data with reference member used for shading correction having a reference surface and background surface at different positions

Номер патента: US20180198952A1. Автор: Takeshi Ito. Владелец: Toshiba TEC Corp. Дата публикации: 2018-07-12.

Method for generating a radio map of an environment and radio communication system being controlled on the basis of a radio map generated by this method

Номер патента: WO2009144030A3. Автор: Octavian Sarca,Joachim Bamberger,Alexander Baumann,Marian Grigoras,Andrei Szabo,Christoph Flossmann,Hildegard Wiggenhorn. Владелец: SIEMENS AKTIENGESELLSCHAFT. Дата публикации: 2010-02-18.

Computer program product and method for auto-focusing one or more lighting fixtures on selected persons in a venue who are performers of a performance occurring at the venue

Номер патента: US11889187B1. Автор: Benjamin Slotznick. Владелец: Individual. Дата публикации: 2024-01-30.

Electronic mail drive type computer system and file operation method having a mail terminal operating independently of a computer system connected thereto

Номер патента: US5537543A. Автор: Kazuyuki Nakamura,Toshio Hirosawa,Motohide Kokunishi,Atsushi Ueoka,Shigeru Sasaki,Tadashi Yamagishi,Michio Hirano,Fujio Fujita,Yoshikazu Ichikawa,Masahiko Ishimaru,Hideki Namba,Tutomo Itoh,Kaoru Kozuma. Владелец: Hitachi Electronics Services Co Ltd. Дата публикации: 1996-07-16.

HOLLOW BODY SUCH AS A BOTTLE FOR PERFUMERY OR COSMETICS HAVING A REASON BY LOCALIZED REMOVAL OF A COATING.

Номер патента: FR2957848A1. Автор: Mathieu Pivaudran,Fabrice Bernardon. Владелец: LOTOISE D'EVAPORATION (SOLEV) STE. Дата публикации: 2011-09-30.

System for obtaining websites having a geolocation near a location of a user computing device

Номер патента: US12019696B2. Автор: Charles Isgar. Владелец: Individual. Дата публикации: 2024-06-25.

System having a signal processor for detection of a signal type

Номер патента: US20070217550A1. Автор: Martin Krueger,Xiaofeng Wu. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2007-09-20.

System for obtaining websites having a geolocation near a location of a user computing device

Номер патента: US20240346099A1. Автор: Charles Isgar. Владелец: Individual. Дата публикации: 2024-10-17.

Method for producing hall effect sensor for magnetic recording head

Номер патента: US4828966A. Автор: Michael Mallary,Christine Bisagni,Shu-Huei Liu. Владелец: Digital Equipment Corp. Дата публикации: 1989-05-09.

Semiconductor device having trench capacitors formed on channel structures and methods for manufacturing the same

Номер патента: US20240315011A1. Автор: Yu-Ting Lin,Chiang-Lin Shih. Владелец: Nanya Technology Corp. Дата публикации: 2024-09-19.

Semiconductor device having trench capacitors formed on channel structures and methods for manufacturing the same

Номер патента: US20240315012A1. Автор: Yu-Ting Lin,Chiang-Lin Shih. Владелец: Nanya Technology Corp. Дата публикации: 2024-09-19.

Method for forming a cylinder capacitor in the dram process

Номер патента: US5989954A. Автор: Jenn Ming Huang,Yu-Hua Lee. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 1999-11-23.

Method for coating and forming novel material layer structure of high-frequency circuit board and article thereof

Номер патента: US20240244763A1. Автор: LongKai LI. Владелец: Individual. Дата публикации: 2024-07-18.

Coated solder wire and method for manufacturing same

Номер патента: US20170348807A1. Автор: Hidetoshi Yamabe,Hiroshi Kobayashi. Владелец: SUMITOMO METAL MINING CO LTD. Дата публикации: 2017-12-07.

Method for producing indium tin oxide film

Номер патента: US6743476B2. Автор: Mitsuoki Hishida. Владелец: Sanyo Electric Co Ltd. Дата публикации: 2004-06-01.

Composite piezomaterial and method for its manufacture

Номер патента: RU2751896C1. Автор: Александр Анатольевич Панич,Алексей Анатольевич Нестеров,Евгений Анатольевич Панич,Михаил Игоревич Толстунов,Любовь Александровна Дыкина. Владелец: Федеральное государственное автономное образовательное учреждение высшего образования «Южный федеральный университет». Дата публикации: 2021-07-19.

Method for fabricating a cavity structure, for fabricating a cavity structure for a semiconductor structure and a semiconductor microphone fabricated by the same

Номер патента: US09363609B2. Автор: Thomas Grille,Carsten Ahrens,Guenter Ziegler,Klaus Muemmler,Wolfgang Friza. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2016-06-07.

Layer structure of a memory cell for a dynamic random access memory device and method for producing the same

Номер патента: US4910566A. Автор: Taiji Ema. Владелец: Fujitsu Ltd. Дата публикации: 1990-03-20.

Semiconductor device structure having channel layer with reduced aperture and method for manufacturing the same

Номер патента: US20240064961A1. Автор: Yu Xiao. Владелец: Nanya Technology Corp. Дата публикации: 2024-02-22.

Apparatus and method for storing video images

Номер патента: US4801817A. Автор: Gary D. Mayhak. Владелец: Individual. Дата публикации: 1989-01-31.

Semiconductor integrated circuit device having function for detecting degradation of semiconductor device and method of driving the same

Номер патента: US09429618B2. Автор: Jeong Tae Hwang. Владелец: SK hynix Inc. Дата публикации: 2016-08-30.

Method for calibrating at least two video cameras relatively to each other for stereoscopic filming and device therefor

Номер патента: US7557835B2. Автор: RYAD Benosman,Salah Bouzar,Jerome Douret,Jean Devars. Владелец: Citilog SAS. Дата публикации: 2009-07-07.

Method and apparatus for forming a video sequence

Номер патента: EP2936794A1. Автор: Sujeet Shyamsundar Mate,Igor Danilo Diego Curcio. Владелец: NOKIA TECHNOLOGIES OY. Дата публикации: 2015-10-28.

Method for forming an organic element of an electronic device

Номер патента: EP4413836A1. Автор: Dietmar Kunkel,Hsin-Rong Tseng,Manuel HAMBURGER,Sebastian Stolz. Владелец: Merck Patent GmBH. Дата публикации: 2024-08-14.

Semiconductor device, electronic appliance, and vehicle

Номер патента: US09391603B2. Автор: Takashi Fujimura,Hirofumi Yuki,Muga Imamura. Владелец: ROHM CO LTD. Дата публикации: 2016-07-12.

Composition for forming a thin layer with low refractive index, manufacturing method thereof, and manufacturing method of a thin layer with low refractive index

Номер патента: US09644113B2. Автор: Kazuhiko Yamasaki,Satoko Higano. Владелец: Mitsubishi Materials Corp. Дата публикации: 2017-05-09.

Method for automated monitoring of thermal resistances of semiconductor devices

Номер патента: RU2698512C1. Автор: Леонид Алексеевич Потапов,Игорь Юрьевич Бутарев,Алексей Николаевич Школин. Владелец: ФЕДЕРАЛЬНОЕ ГОСУДАРСТВЕННОЕ БЮДЖЕТНОЕ ОБРАЗОВАТЕЛЬНОЕ УЧРЕЖДЕНИЕ ВЫСШЕГО ОБРАЗОВАНИЯ "Брянский государственный технический университет". Дата публикации: 2019-08-28.

Apparatus and method for controlling die force in a semiconductor device testing assembly

Номер патента: WO2006138655A9. Автор: Troy Taylor,Steve Wetzel. Владелец: Steve Wetzel. Дата публикации: 2007-04-19.

Method for wafer-level burn-in stressing of semiconductor devices and semiconductor device substrates configured to effect the method

Номер патента: US20040032277A1. Автор: Kenneth Marr. Владелец: Individual. Дата публикации: 2004-02-19.

Photosensitive resin composition, production method for cured relief pattern using it, and semiconductor device

Номер патента: US7598009B2. Автор: Kenichiro Sato,Naoya Sugimoto. Владелец: Fujifilm Corp. Дата публикации: 2009-10-06.

Word line driver, method for driving the word line driver, and semiconductor memory device having the word line driver

Номер патента: US20090323455A1. Автор: Kang-Seol Lee,Tae-Sik Yun. Владелец: Hynix Semiconductor Inc. Дата публикации: 2009-12-31.

Dental implant, component for dental applications, implant system for dental applications, method for forming a protective layer on the surface of an implantable or implant component, implantable or implant component having a protective layer, and use of a protective layer

Номер патента: US12121414B2. Автор: Sebastian Bauer,Vincent Milleret,Serif AMETI,Jessica GILGENBACH BLUME,Angelines GASSER,Tojo RAZAFIARISON,Giulio Parcianello,Michael SANDHOLZER,Magdalena PAWELKIEWICZ KOEBEL,Fabio EVANGELISTI,Philipp LIENEMANN. Владелец: Nobel Biocare Services AG. Дата публикации: 2024-10-22.

Systems and methods for linear spines forming a spherical basket for improved tissue contact and current delivery

Номер патента: EP4215141A3. Автор: Thanh Nguyen,Keshava Datta,Kevin Mark Okarski,Abubakarr BAH. Владелец: Biosense Webster Israel Ltd. Дата публикации: 2023-10-04.

Method for determining a sampling scheme, a semiconductor substrate measurement apparatus, a lithographic apparatus

Номер патента: EP4235306A3. Автор: Roy Werkman,Erik Jensen,Paul DERWIN,Pieter Gerardus Jacobus SMORENBERG,Putra SAPUTRA,Khalid ELBATTAY,Hyun-Woo Yu,Gautam SARMA. Владелец: ASML Netherlands BV. Дата публикации: 2023-09-20.

System and method for scheduling manufacturing jobs for a semiconductor manufacturing tool

Номер патента: US20050203654A1. Автор: Hui-Tang Liu,Ko-Pin Chang,Jui-An Shih. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2005-09-15.

Method for manufacturing a structural part made of a composite material and including a radially oriented double yoke

Номер патента: US09387623B2. Автор: Patrick Dunleavy,Richard Masson,Thierry Rougier. Владелец: Messier Bugatti Dowty SA. Дата публикации: 2016-07-12.

System and method for analyzing crosstalk occurring in a semiconductor integrated circuit

Номер патента: US7519932B2. Автор: Toshiyuki Sakamoto. Владелец: Toshiba Corp. Дата публикации: 2009-04-14.

Method for changing the development pattern, increasing the growth and the accumulation of starch, changing the structure of starch and increasing the resistance to water stress in plants

Номер патента: US9642361B2. Автор: Abdellatif Bahaji,Jun Li,Francisco Jose Munoz Perez,Javier Pozueta Romero,Miren Edurne Baroja Fernandez,Ignacio Ezquer Garin,Miroslav Ovecka. Владелец: Iden Biotechnology SL. Дата публикации: 2017-05-09.

Method for changing the development pattern, increasing the growth and the accumulation of starch, changing the structure of starch and increasing the resistance to water stress in plants

Номер патента: US20180055047A1. Автор: Abdellatif Bahaji,Jun Li,Francisco Jose Munoz Perez,Javier Pozueta Romero,Miren Edurne Baroja Fernandez,Ignacio Ezquer Garin,Miroslav Ovecka. Владелец: Iden Biotechnology SL. Дата публикации: 2018-03-01.

Anti-glare film, method for producing anti-glare film, polarizer, and image display device having different size particles with impregnation layers

Номер патента: US09606271B2. Автор: Makoto Honda,Takashi Kodama,Gen Furui. Владелец: DAI NIPPON PRINTING CO LTD. Дата публикации: 2017-03-28.

Fixing device having a convex portion on surface of a heating unit, and image forming apparatus provided with fixing device

Номер патента: US11054777B2. Автор: Eiji Nakajima. Владелец: Kyocera Document Solutions Inc. Дата публикации: 2021-07-06.

Method for Determining the Braking Force in an Electromechanical Brake Device Having an Electric Brake Motor

Номер патента: US20200001852A1. Автор: Ullrich Sussek. Владелец: ROBERT BOSCH GMBH. Дата публикации: 2020-01-02.

Manufacturing method for a system comprising a stent and a delivery device having a balloon

Номер патента: EP4385466A1. Автор: Amir Fargahi. Владелец: BIOTRONIK AG. Дата публикации: 2024-06-19.

Semiconductor device and data processing system selectively operating as one of a big endian or little endian system

Номер патента: US09754562B2. Автор: Yuri Azuma,Goro Sakamaki. Владелец: Renesas Electronics Corp. Дата публикации: 2017-09-05.

Method for changing the development pattern, increasing the growth and the accumulation of starch, changing the structure of starch and increasing the resistance to water stress in plants

Номер патента: US09642361B2. Автор: Abdellatif Bahaji,Jun Li,Francisco Jose Munoz Perez,Javier Pozueta Romero,Miren Edurne Baroja Fernandez,Ignacio Ezquer Garin,Miroslav Ovecka. Владелец: Iden Biotechnology SL. Дата публикации: 2017-05-09.

Method for producing a blank of fluorine-doped and titanium-doped glass having a high silicic-acid content and a blank produced according to the method

Номер патента: US09568818B2. Автор: Stefan Ochs,Klaus Becker. Владелец: Heraeus Quarzglas GmbH and Co KG. Дата публикации: 2017-02-14.

Semiconductor device and data processing system selectively operating as one of a big endian or little endian system

Номер патента: US09501964B2. Автор: Yuri Azuma,Goro Sakamaki. Владелец: Renesas Electronics Corp. Дата публикации: 2016-11-22.

A conjugate, composition and method for noncovalent antibody catenation that increases antigen-binding avidity of an antibody in proportion to the density of a target antigen

Номер патента: US20240228669A9. Автор: Seong-Woo Kim,Byung-Ha Oh,Bo-Seong JEONG,Seong-Bin IM,Jinyeop SONG. Владелец: Korea Advanced Institute of Science and Technology KAIST. Дата публикации: 2024-07-11.

Light emitting period setting method, driving method for display panel, driving method for backlight, light emitting period setting apparatus, semiconductor device, display panel and electronic apparatus

Номер патента: US09953578B2. Автор: Hiroshi Hasegawa,Hironobu Abe,Teppei Isobe. Владелец: Sony Corp. Дата публикации: 2018-04-24.

Light emitting period setting method, driving method for display panel, driving method for backlight, light emitting period setting apparatus, semiconductor device, display panel and electronic apparatus

Номер патента: US09761176B2. Автор: Hiroshi Hasegawa,Hironobu Abe,Teppei Isobe. Владелец: Sony Corp. Дата публикации: 2017-09-12.

Light emitting period setting method, driving method for display panel, driving method for backlight, light emitting period setting apparatus, semiconductor device, display panel and electronic apparatus

Номер патента: US09626911B2. Автор: Hiroshi Hasegawa,Hironobu Abe,Teppei Isobe. Владелец: Sony Corp. Дата публикации: 2017-04-18.

Apparatus and method for high speed forming a hinged carton

Номер патента: US4549876A. Автор: Thomas R. Baker,William H. Hittenberger,Boris J. Posen. Владелец: Kliklok LLC. Дата публикации: 1985-10-29.

Method for determining a matched routing arrangement for semiconductor devices

Номер патента: US20040044977A1. Автор: Michael Lee,Brooklin Gore,Matthew Priest. Владелец: Individual. Дата публикации: 2004-03-04.

Method for placing operational cells in a semiconductor device

Номер патента: US20140351781A1. Автор: Michael Priel,Anton Rozen,Asher BERKOVITZ. Владелец: FREESCALE SEMICONDUCTOR INC. Дата публикации: 2014-11-27.

A hot press forming apparatus and a method for hot press forming a blank

Номер патента: EP3962673A1. Автор: Lars Sandberg,Joakim INNALA,Petter ULFBERG. Владелец: Autotech Engineering SL. Дата публикации: 2022-03-09.

Systems and methods for linear spines forming a spherical basket for improved tissue contact and current delivery

Номер патента: EP4393431A1. Автор: Christopher Thomas Beeckler,Kevin Mark Okarski,Ishan KHAN. Владелец: Biosense Webster Israel Ltd. Дата публикации: 2024-07-03.

Systems and methods for linear spines forming a spherical basket for improved tissue contact and current delivery

Номер патента: US20240216046A1. Автор: Christopher Thomas Beeckler,Kevin Mark Okarski,Ishan KHAN. Владелец: Biosense Webster Israel Ltd. Дата публикации: 2024-07-04.

Pointing module, method for calibrating zero point of the same, and electronic device having the same

Номер патента: WO2009069896A1. Автор: Seung Hwan Lee,Sang Gweon Chang. Владелец: INNOCHIPS TECHNOLOGY CO., LTD.. Дата публикации: 2009-06-04.

Semiconductor device with reduced power consumption that selectively drives one of a plurality of signal receivers according to level of external supply voltage

Номер патента: US7512823B2. Автор: Dae Han Kwon. Владелец: Hynix Semiconductor Inc. Дата публикации: 2009-03-31.

Monitoring circuit of semiconductor device to monitor a read-period signal during activation of a boot-up enable signal

Номер патента: US09459882B2. Автор: Joo Hyeon Lee. Владелец: SK hynix Inc. Дата публикации: 2016-10-04.

Method for determining the functional activity of the human complement system for predicting the severity of the course of a systemic inflammatory reaction

Номер патента: RU2756764C1. Автор: Оксана Михайловна Драпкина,Батожаб Батожаргалович Шойбонов,Софья Олеговна Елиашевич,Диана Викторовна Григорьева,Светлана Михайловна Толпыго,Михаил Юрьевич Карганов,Ирина Борисовна Алчинова,Татьяна Павловна Баронец,Чимит Батожабовна Раднаева,Лиана Резовна Дзодзуашвили,Марина Сергеевна Деморжи,Наталия Васильевна Терешкина,Саид Ибрагимович Каба. Владелец: Федеральное государственное бюджетное учреждение "Национальный медицинский исследовательский центр терапии и профилактической медицины" Министерства здравоохранения Российской Федерации (ФГБУ "НМИЦ ТПМ" Минздрава России). Дата публикации: 2021-10-05.

Method for laminating and forming a composite laminate in a single operation

Номер патента: EP1401647A2. Автор: David D'arcy Clifford. Владелец: Dofasco Inc. Дата публикации: 2004-03-31.

Photosensitive resin composition, production method for cured relief pattern using it, and semiconductor device

Номер патента: US20090035693A1. Автор: Kenichiro Sato,Naoya Sugimoto. Владелец: Fujifilm Corp. Дата публикации: 2009-02-05.

Method for interstitial, high-power brachytherapy of locally advanced small pelvis tumors having a lateral invasion of a small pelvis wall

Номер патента: RU2719935C2. Автор: Андрей Дмитриевич Каприн,Сергей Анатольевич Иванов,Валерий Александрович Коротков,Виталий Александрович Бирюков,Игорь Петрович Костюк,Игорь Александрович Гулидов,Наталья Борисовна Борышева,Леонид Анатольевич Васильев,Георгий Отарович Рухадзе,Павел Викторович Соколов. Владелец: Федеральное государственное бюджетное учреждение "Национальный медицинский исследовательский центр радиологии" Министерства здравоохранения Российской Федерации (ФГБУ "НМИЦ радиологии" Минздрава России). Дата публикации: 2020-04-23.

Methods for the joint connection of the first thermosetting composite and the second thermosetting composite with the formation of a cured composite part

Номер патента: RU2758430C2. Автор: Кенити ЙОСИОКА,Карл М. НЕЛЬСОН,Трэвис Джеймс ШЕРВУД,Хардик ДАЛАЛ,Феликс Н. НГУЕН,Дунйон ЛИ,Хидео Эндрю КОЯНАГИ. Владелец: Торэй Индастрис, Инк.. Дата публикации: 2021-10-28.

Method for applying a reinforcement of metal material to a component of metal material, particularly in the construction of a motor-vehicle body or a sub-assembly thereof

Номер патента: US11911836B2. Автор: Daniele Pullini,Massimo CUCCO,Gabriele CIACCIO,Fabio D'AIUTO,Michele Maria TEDESCO. Владелец: Centro Ricerche Fiat SCpA. Дата публикации: 2024-02-27.

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Номер патента: EP4215141A2. Автор: Thanh Nguyen,Keshava Datta,Kevin Mark Okarski,Abubakarr BAH. Владелец: Biosense Webster Israel Ltd. Дата публикации: 2023-07-26.

Method for generating a structure mesh, use of a structure mesh, computer program and computer-readable medium

Номер патента: EP3980247A1. Автор: Gaetan COMPERE,Boris LAUBER. Владелец: Siemens Industry Software NV. Дата публикации: 2022-04-13.

Tensioning device for pre-stressing, post-tensioning or providing a confining pressure to a structure, method for pre-stressing a structure, use of a roller for pre-stressing a structure and use of a roller for restressing, detensioning or releasing a confining pressure from a structure

Номер патента: EP4276260A1. Автор: Behzad Dehghan Manshadi,Antonio Caballero jurado,Haifeng FAN. Владелец: BBR VT International Ltd. Дата публикации: 2023-11-15.

Process for producing wine, method for modulating green character of wine, wine obtained or obtainable by such process or method, and use of a vine-shoot material as winemaking additive

Номер патента: WO2022128367A1. Автор: María Rosario Salinas Fernández,Cristina Cebrián Tarancón,Amaya Zalacain Aramburu,Gonzalo Luis Alonso Díaz-Marta,Francisco De Asís Fernández Roldán. Владелец: UNIVERSIDAD DE CASTILLA LA MANCHA. Дата публикации: 2022-06-23.

Process for producing wine, method for modulating green character of wine, wine obtained or obtainable by such process or method, and use of a vine-shoot material as winemaking additive

Номер патента: EP4015613A1. Автор: María Rosario Salinas Fernández,Cristina Cebrián Tarancón,Amaya Zalacain Aramburu,Gonzalo Luis Alonso Díaz-Marta,Francisco De Asís Fernández Roldán. Владелец: UNIVERSIDAD DE CASTILLA LA MANCHA. Дата публикации: 2022-06-22.

Method for preparing a biomass of stable freeze-dried bacterial cells and determining the stability thereof by means of a cytofluorometry method

Номер патента: CA3136174A1. Автор: Marco Pane,Vera Mogna,Serena ALLESINA. Владелец: Probiotical SpA. Дата публикации: 2020-10-22.

Method for detecting, based on the measurement or detection of accelerations, operating anomalies of an unconstrained master device of a master-slave robotic system for medical or surgical teleoperation and related robotic system

Номер патента: US20240230707A9. Автор: Massimiliano Simi,Emanuele Ruffaldi. Владелец: Medical Microinstruments Inc. Дата публикации: 2024-07-11.

Method for producing at least one ash-forming means for a particulate filter of an exhaust gas system of a gasoline engine

Номер патента: US20190381438A1. Автор: Michael Wessels,Lukas Engin. Владелец: Dr Ing HCF Porsche AG. Дата публикации: 2019-12-19.

Method for detecting, based on the measurement or detection of velocities, operating anomalies of an unconstrained master device of a master-slave robotic system for medical or surgical teleoperation and related robotic system

Номер патента: US20240225761A9. Автор: Massimiliano Simi,Matteo Tanzini,Emanuele Ruffaldi,Matteo BAGHERI GHAVIFEKR. Владелец: Medical Microinstruments Inc. Дата публикации: 2024-07-11.

Method for making a containment element and apparatus for heat-sealing a covering film to an annular band of a containment element

Номер патента: US20180105312A1. Автор: Giovanni Mondini. Владелец: Mondini SRL. Дата публикации: 2018-04-19.

Reception circuit, method for adjusting timing in reception circuit, and semiconductor device

Номер патента: US9620196B2. Автор: Hiroyuki Kano,Kazumi Kojima,Hiroaki Ukai,Takanori Aoshima. Владелец: Socionext Inc. Дата публикации: 2017-04-11.

Reception circuit, method for adjusting timing in reception circuit, and semiconductor device

Номер патента: US09620196B2. Автор: Hiroyuki Kano,Kazumi Kojima,Hiroaki Ukai,Takanori Aoshima. Владелец: Socionext Inc. Дата публикации: 2017-04-11.

Method for obtaining information signatures from nuclear material or about the presence, the nature and/or the shielding of a nuclear material and measurement setup for performing such method

Номер патента: US09477005B2. Автор: Rico Chandrasekharan,Ulisse GENDOTTI,Giovanna Davatz,David MURER. Владелец: Arktis Radiation Detectors Ltd. Дата публикации: 2016-10-25.

Semiconductor device and data processing system selectively operating as one of a big endian or little endian system

Номер патента: US8316217B2. Автор: Yuri Azuma,Goro Sakamaki. Владелец: Renesas Electronics Corp. Дата публикации: 2012-11-20.

Method for determining a sampling scheme, a semiconductor substrate measurement apparatus, a lithographic apparatus

Номер патента: EP4235306A2. Автор: Roy Werkman,Erik Jensen,Paul DERWIN,Pieter Gerardus Jacobus SMORENBERG,Putra SAPUTRA,Khalid ELBATTAY,Hyun-Woo Yu,Gautam SARMA. Владелец: ASML Netherlands BV. Дата публикации: 2023-08-30.

Indicator fluids, systems, and methods for assessing movement of substances within, to or from a cerebrospinal fluid, brain or spinal cord compartment of a cranio-spinal cavity of a human

Номер патента: US12016651B2. Автор: Per Kristian Eide,Geir Andre RINGSTAD. Владелец: Brainwidesolutions As. Дата публикации: 2024-06-25.

Method for creating a transition from an edge of an add-on part mounted on the outer surface of a rotor blade

Номер патента: AU2020238502A1. Автор: Hartwig Lohse,Giridhar Ramanujam,Ane Kold di Gennaro. Владелец: Siemens Gamesa Renewable Energy AS. Дата публикации: 2021-09-23.

Systems and methods for easy identification, modification and progress-Tracking of Variables relating to appropriateness, safety, effectiveness, risks and benefits of a medicinal treatment combination

Номер патента: US20240021296A1. Автор: Robert Moore. Владелец: Individual. Дата публикации: 2024-01-18.

A filter and a method for determining a filter taking into account the spectral transmittance of an ocular media of an eye of a wearer

Номер патента: US20230213789A1. Автор: Anne-Catherine Scherlen,Marie Dubail,Prakhar KASTURE. Владелец: Essilor International Compagnie Generale dOptique SA. Дата публикации: 2023-07-06.

Method for manufacturing a real component, enabling at least one acceptance criterion to be displayed as a function of a target point on the component

Номер патента: US20220398352A1. Автор: Dominique Roger,Franck CHEREAU. Владелец: AIRBUS OPERATIONS SAS. Дата публикации: 2022-12-15.

System and method for ultrasonic laser testing using a laser source to generate ultrasound having a tunable wavelength

Номер патента: AU768188B2. Автор: Robert J. Filkins,Peter W. Lorraine,Laurence Bigio. Владелец: Lockheed Corp. Дата публикации: 2003-12-04.

System and method for ultrasonic laser testing using a laser source to generate ultrasound having a tunable wavelength

Номер патента: WO2001007865A2. Автор: Robert J. Filkins,Peter W. Lorraine,Laurence Bigio. Владелец: LOCKHEED MARTIN CORPORATION. Дата публикации: 2001-02-01.

Method for controlling a braking system with bbw technology for the distribution of braking forces for service braking of a vehicle

Номер патента: EP4441388A1. Автор: Davide PAOLINI,Samuele MAZZOLENI,Andrea Maria Rosotti,Matteo Folatti. Владелец: Brembo SpA. Дата публикации: 2024-10-09.

Method for producing a composition containing at least one metal amino acid compound and composition obtainable by means of a method of this kind

Номер патента: US12103901B2. Автор: Kevin H. W. Lamberts,Ismet Bice,Heiko Greimann. Владелец: Biochem Zusatzstoffe Handels- und Produktionsgesellschaft Mbh. Дата публикации: 2024-10-01.

Method for operating an electromechanical brake booster, recuperative braking system, and control device for an electromechanical brake booster of a braking system

Номер патента: US09676379B2. Автор: Bertram Foitzik,Benoit Herve,Benno Schmieg. Владелец: ROBERT BOSCH GMBH. Дата публикации: 2017-06-13.

Liquid crystal display device having guide patterns provided at a periphery of a substrate

Номер патента: US09459497B2. Автор: Kenji Saito,Akira Minami,Masato Ishikawa. Владелец: Japan Display Inc. Дата публикации: 2016-10-04.

Method for automatically maintaining and improving a hydraulic model for a water distribution network, and controlling the operation of a water distribution network using the maintained hydraulic model

Номер патента: EP4392835A1. Автор: Ivan STOIANOV,Filippo PECCI,Alexander Waldron. Владелец: Imperial College Innovations Ltd. Дата публикации: 2024-07-03.

Method for Producing Luminescent Particles with a Protective Layer and Luminescent Particles Having a Protective Layer

Номер патента: US20190048466A1. Автор: Tim Fiedler,Frank Jermann,Sonja Tragl. Владелец: OSRAM Opto Semiconductors GmbH. Дата публикации: 2019-02-14.

METHOD FOR TREATING HUMAN TUMOR CELLS WITH A NEWCASTLE DISEASE VIRUS STRAIN HAVING A p53 INDEPENDENT ONCOLYTIC EFFECT

Номер патента: WO2005051330A3. Автор: Zsolt Fabian,Joseph Szeberenyi,Laszlo K Csatary. Владелец: United Cancer Res Inst. Дата публикации: 2005-10-06.

Method for automatically maintaining and improving a hydraulic model for a water distribution network, and controlling the operation of a water distribution network using the maintained hydraulic model

Номер патента: WO2023026044A1. Автор: Ivan STOIANOV,Filippo PECCI,Alexander Waldron. Владелец: Imperial College Innovations Ltd. Дата публикации: 2023-03-02.

Liquid crystal display device having increased brightness at a peripheral region of a pixel

Номер патента: US09523893B2. Автор: Hidemasa Yamaguchi,Takeyuki Tsuruma. Владелец: Japan Display Inc. Дата публикации: 2016-12-20.

Method for ascertaining an offset of an output signal of an evaluation circuit integrated in a sensor, preferably of a pressure sensor installed in a combustion chamber of an internal combustion engine, and sensor

Номер патента: US09518888B2. Автор: Harald Ryll. Владелец: ROBERT BOSCH GMBH. Дата публикации: 2016-12-13.

Angular rate sensor having a sense element constrained to motion about a single axis and flexibly attached to a rotary drive mass

Номер патента: AU2002345705A1. Автор: John W. Reeds,Ying W. Hsu. Владелец: Microsensors Inc. Дата публикации: 2003-01-02.

Method for determining the angular position of an electronic module fixed to the inner face of the tread of a tire

Номер патента: US09632106B2. Автор: Nicolas Guinart,Jean-Philippe Boisset. Владелец: Continental Automotive France SAS. Дата публикации: 2017-04-25.

Method for controlling a motor-vehicle provided with an internal combustion engine having a system for variable actuation of the intake valves

Номер патента: US09429080B2. Автор: Fabio Borean,Cosimo Carvignese,Roberto Finizio,Marco Cuniberti. Владелец: Centro Ricerche Fiat SCpA. Дата публикации: 2016-08-30.

Method and apparatus for forming a vacuum insulated structure for an appliance having a pressing mechanism incorporated within an insulation delivery system

Номер патента: US10222116B2. Автор: Abhay NAIK,Mohamed Alshourbagy,Berhanu Allo,Lakshya J. Deka,Lorraine J. Westlake,Jon M. Anthony. Владелец: Whirlpool Corp. Дата публикации: 2019-03-05.

Method for continuous hot forming a honeycomb filler from prepreg

Номер патента: RU2673049C1. Автор: Вячеслав Юрьевич Шестопалов,Андрей Геннадьевич Вопилов. Владелец: Общество с ограниченной ответственностью "Научно-производственная компания "РБ-Композит". Дата публикации: 2018-11-21.

Mirror mounting, alignment, and scanning mechanism and scanning method for radiographic x-ray imaging, and x-ray imaging device having same

Номер патента: CA2709216A1. Автор: David L. Windt. Владелец: Reflective X-Ray Optics Llc. Дата публикации: 2009-08-06.

Image forming apparatus having a transfer member positional downstream of a nip portion

Номер патента: US5778291A. Автор: Masao Okubo,Nobukazu Takahashi,Noriaki Kojima. Владелец: Fuji Xerox Co Ltd. Дата публикации: 1998-07-07.

Method of forming a magnetic recording and storage device having high abrasion resistance

Номер патента: US4152469A. Автор: Richard E. Allen,Peter R. Segatto. Владелец: Corning Glass Works. Дата публикации: 1979-05-01.

Method for Fabricating a Lead Screw Made of Synthetic Resin Material and Having a Core Tube Therein

Номер патента: CA2132237A1. Автор: Kiyoshi Ishii,Mizuho Ishikawa. Владелец: Individual. Дата публикации: 1995-03-18.

Mirror mounting, alignment, and scanning mechanism and scanning method for radiographic x-ray imaging, and x-ray imaging device having same

Номер патента: US20090190720A1. Автор: David L. Windt. Владелец: Reflective X Ray Optics LLC. Дата публикации: 2009-07-30.

Method for forming images using a thermal transfer image-receiving sheet having a lenticular lens

Номер патента: EP2338690B1. Автор: Takashi Shimizu,Ryo Imai,Shigeaki Ohtani. Владелец: Fujifilm Corp. Дата публикации: 2012-03-21.

Method for providing an abrasion resistant cutting edge and trimming device having said cutting edge

Номер патента: WO2013030754A1. Автор: Klaus Eimann,Bernd Nootbaar. Владелец: Braun GmbH. Дата публикации: 2013-03-07.

Optically clear adhesive sheet, method for producing optically clear adhesive sheet, laminate, and display device having touch panel attached thereto

Номер патента: US20190048234A1. Автор: Jun Onishi,Soichiro Nakane,Yuki Hosokawa. Владелец: Bando Chemical Industries Ltd. Дата публикации: 2019-02-14.

Method for maximizing a battery life and a temperature monitoring device having the same

Номер патента: US20240167886A1. Автор: Kenneth M. Stein,Michael C. Wondolowski,David C. Teal,Christian S. Rothwell,Lisa M. Gabriel. Владелец: Zebra Technologies Corp. Дата публикации: 2024-05-23.

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Номер патента: US20230358367A1. Автор: Helerson Kemmer,Mark Hellmann,Matthias Rink. Владелец: ROBERT BOSCH GMBH. Дата публикации: 2023-11-09.

Angular rate sensor having a sense element constrained to motion about a single axis and flexibly attached to a rotary drive mass

Номер патента: EP1440321A4. Автор: John W Reeds,Ying W Hsu. Владелец: Microsensors Inc. Дата публикации: 2006-04-05.

Method for estimating the early failure rate of semiconductor devices

Номер патента: US20060107094A1. Автор: Thomas Anderson,John Carulli. Владелец: Texas Instruments Inc. Дата публикации: 2006-05-18.

System and method for tracking a box and correlating a quality characteristic of the box to an overall equipment effectiveness of a packaging line that manipulates the box during a product packaging process

Номер патента: EP3452967A1. Автор: Ernest Barfield Widner,Michael T. Payne. Владелец: Georgia Pacific Corrugated LLC. Дата публикации: 2019-03-13.

Method for bonding a tubular part in coaxial relationship with a part having a bore therein

Номер патента: US20020030085A1. Автор: Phillip Sollami. Владелец: SOLLAMI COMPANY. Дата публикации: 2002-03-14.

System and method for estimating the richness of the gaseous mixture in the combustion chamber of an internal combustion engine of a motor vehicle power plant

Номер патента: US09599056B2. Автор: Philippe Obernesser,Nicolas Quechon,Vincent Dugue. Владелец: RENAULT SAS. Дата публикации: 2017-03-21.

Inkjet recording ink, method for producing said ink, and ink cartridge and recording device having said ink

Номер патента: US20040095449A1. Автор: Hiroyuki Matsuo,Mamoru Soga,Masaichiro Tatekawa,Hikekazu Arase. Владелец: Individual. Дата публикации: 2004-05-20.

Method for induction bend forming a pressure-resistant pipe having a large wall thickness and a large diameter

Номер патента: CA2965580C. Автор: August Wilhelm Schäfer. Владелец: AWS Schäfer Technologie GmbH. Дата публикации: 2020-04-28.

Systems and methods for dynamic blocks forming a passageway

Номер патента: US9795866B2. Автор: Jeb Belcher,Earl Wilson Belcher. Владелец: Individual. Дата публикации: 2017-10-24.

Roll-bonded body and method for producing roll-bonded body

Номер патента: US11878363B2. Автор: Yusuke Hashimoto,Teppei Kurokawa,Takafumi Hatakeda. Владелец: Toyo Kohan Co Ltd. Дата публикации: 2024-01-23.

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Номер патента: US20170352315A1. Автор: Hiroshi Hasegawa,Hironobu Abe,Teppei Isobe. Владелец: Sony Corp. Дата публикации: 2017-12-07.

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Номер патента: US20160321998A1. Автор: Hiroshi Hasegawa,Hironobu Abe,Teppei Isobe. Владелец: Sony Corp. Дата публикации: 2016-11-03.

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Номер патента: US20170069272A1. Автор: Hiroshi Hasegawa,Hironobu Abe,Teppei Isobe. Владелец: Sony Corp. Дата публикации: 2017-03-09.

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Номер патента: US20160189637A1. Автор: Hiroshi Hasegawa,Hironobu Abe,Teppei Isobe. Владелец: Sony Corp. Дата публикации: 2016-06-30.

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Номер патента: US11931795B2. Автор: Robert E. Isaacs. Владелец: Nuvasive Inc. Дата публикации: 2024-03-19.

Roll-bonded body and method for producing roll-bonded body

Номер патента: US20210023648A1. Автор: Yusuke Hashimoto,Teppei Kurokawa,Takafumi Hatakeda. Владелец: Toyo Kohan Co Ltd. Дата публикации: 2021-01-28.

A conjugate, composition and method for noncovalent antibody catenation that increases antigen-binding avidity of an antibody in proportion to the density of a target antigen

Номер патента: US20240132625A1. Автор: Seong-Woo Kim,Byung-Ha Oh,Bo-Seong JEONG,Seong-Bin IM,Jinyeop SONG. Владелец: Korea Advanced Institute of Science and Technology KAIST. Дата публикации: 2024-04-25.

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Номер патента: US20240189886A1. Автор: Robert E. Isaacs. Владелец: Nuvasive Inc. Дата публикации: 2024-06-13.

Glasses frame comprising at least one portion of an electronic device encapsulated inside at least one element thereof and method for encapsulating said at least one portion of an electronic device inside said at least one element of a glasses frame

Номер патента: EP4395996A1. Автор: Dino MICHELON,Fabio BORSOI,Gianluca FANDELLA,Davide Venturi. Владелец: Luxottica SRL. Дата публикации: 2024-07-10.

System and Method for Determining Whether to Operate a Robot in Conjunction with a Rotary Milking Platform Based on Detection of a Milking Claw

Номер патента: US20150366155A1. Автор: Henk Hofman,Peter Willem Van Der Sluis,Cor De Ruijter,Menno Koekoek. Владелец: TECHNOLOGIES HOLDINGS CORP. Дата публикации: 2015-12-24.

Method for producing an L-glutamic acid and L-aspartic acid using a recombinant microorganism having enhanced expression of a ybjL protein

Номер патента: US09822385B2. Автор: Kazuhiko Matsui,Yoshihiro Usuda,Kazue Kawamura,Keita Fukui,Yoshinori Tajima,Yoshihiko Hara. Владелец: Ajinomoto Co Inc. Дата публикации: 2017-11-21.

System and method for determining whether to operate a robot in conjunction with a rotary milking platform based on detection of a milking claw

Номер патента: US09648839B2. Автор: Henk Hofman,Peter Willem Van Der Sluis,Cor De Ruijter,Menno Koekoek. Владелец: TECHNOLOGIES HOLDINGS CORP. Дата публикации: 2017-05-16.

Method of fabricating a structural element formed of a resin-hardened velour fabric

Номер патента: US5240533A. Автор: Wolfgang Bottger,Kurt Biedermann,Werner Pensel. Владелец: Vorwerk and Co Interholding GmbH. Дата публикации: 1993-08-31.

Multi-system air-conditioning machine having a plurality of indoor units connected to a single outdoor unit

Номер патента: US5161386A. Автор: Itsuo Higuchi. Владелец: Toshiba Corp. Дата публикации: 1992-11-10.

System and method for operating a material drop ejecting three-dimensional (3D) object printer to prevent quantization error in perimeters of a three-dimensional printed object

Номер патента: US11883881B2. Автор: David A. Mantell,Walter Hsiao,Stuart A. Schweid,Daniel Cormier,PriyaankaDevi Guggilapu,David G. Tilley,Christopher T. Chungbin,Dinesh Krishna Kumar Jayabal. Владелец: Xerox Corp. Дата публикации: 2024-01-30.

System and process for creating a structured tag representation of a document

Номер патента: EP1240599A1. Автор: William Lin,Timothy Gill,Zachary Nies,David Knoshaug. Владелец: Quark Media House Sarl. Дата публикации: 2002-09-18.

Cover for a structural sill portion of a vehicle

Номер патента: EP2045137A3. Автор: Giovanni Boreanaz,Angelo STORGATO,Federica Fino. Владелец: Centro Ricerche Fiat SCpA. Дата публикации: 2010-11-17.

Capacitive media interface level sensor, sensitive element of the capacitive sensor, body for electrodes of a capacitive sensor, measured medium flow rate monitoring system, container for the measured medium, method for assembly of the capacitive sensor, method for pre-calibration of the capacitive sensor, method for measuring media interface level using a capacitive sensor, and connecting sleeve for the body for electrodes of a capacitive sensor

Номер патента: RU2761102C2. Автор: Борис Валерьевич Паньков,Александр Борисович Максименко,Юрий Анатольевич Дьяконов,Александр Григорьевич Крестинов. Владелец: Осаюхинг Омникомм. Дата публикации: 2021-12-03.

Device and method for utilizing the waste heat of an internal combustion engine, in particular for utilizing the waste heat of a vehicle engine

Номер патента: US9657601B2. Автор: Mikhael Mitri,Alena Von Lavante. Владелец: Individual. Дата публикации: 2017-05-23.

Method for evaluating a suitability of lighting conditions for detecting an analyte in a sample using a camera of a mobile device

Номер патента: CA3102183A1. Автор: Bernd Limburg,Max Berg,Fredrik Hailer,Timo Klein,Volker Tuerck,Christian Melchinger. Владелец: F Hoffmann La Roche AG. Дата публикации: 2019-12-19.

Device and method for utilizing the waste heat of an internal combustion engine, in particular for utilizing the waste heat of a vehicle engine

Номер патента: CA2874473C. Автор: Mikhael Mitri,Alena Von Lavante. Владелец: Individual. Дата публикации: 2019-04-30.

Method for automatically determining the electrical energy to be supplied to a furnace for heating preforms, arranged upstream of a stretch-blow molding machine

Номер патента: WO2024047603A1. Автор: Matteo Zoppas,David GAIOTTI,Livio VOLPATO,Paolo DE NARDI. Владелец: S.I.P.A. Societa' Industrializzazione Progettazione E Automazione S.P.A.. Дата публикации: 2024-03-07.

System and method for ultrasonic laser testing using a laser source to generate ultrasound having a tunable wavelength

Номер патента: AU7824800A. Автор: Robert J. Filkins,Peter W. Lorraine,Laurence Bigio. Владелец: Lockheed Corp. Дата публикации: 2001-02-13.

Method for evaluating a suitability of lighting conditions for detecting an analyte in a sample using a camera of a mobile device

Номер патента: TN2020000222A1. Автор: Bernd Limburg,Max Berg,Fredrik Hailer,Timo Klein,Volker Tuerck,Christian Melchinger. Владелец: Hoffmann La Roche. Дата публикации: 2022-07-01.

Method for detecting, based on the measurement or detection of accelerations, operating anomalies of an unconstrained master device of a master-slave robotic system for medical or surgical teleoperation and related robotic system

Номер патента: US20240133916A1. Автор: Massimiliano Simi,Emanuele Ruffaldi. Владелец: Medical Microinstruments Inc. Дата публикации: 2024-04-25.

Method for detecting, based on the measurement or detection of accelerations, operating anomalies of an unconstrained master device of a master-slave robotic system for medical or surgical teleoperation and related robotic system

Номер патента: EP4294310A1. Автор: Massimiliano Simi,Emanuele Ruffaldi. Владелец: Medical Microinstruments Inc. Дата публикации: 2023-12-27.

Method for determining potential damage to a vehicle battery and motor vehicle having a vehicle battery

Номер патента: US11738661B2. Автор: Tobias Brok. Владелец: Audi AG. Дата публикации: 2023-08-29.

Method for obtaining information signatures from nuclear material or about the presence, the nature and/or the shielding of a nuclear material and measurement setup for performing such method

Номер патента: WO2013068032A1. Автор: Rico Chandrasekharan,Ulisse GENDOTTI,Giovanna Davatz,David MURER. Владелец: ARKTIS RADIATION DETECTORS LTD.. Дата публикации: 2013-05-16.

Method for detecting, based on the measurement or detection of velocities, operating anomalies of an unconstrained master device of a master-slave robotic system for medical or surgical teleoperation and related robotic system

Номер патента: US20240130813A1. Автор: Massimiliano Simi,Matteo Tanzini,Emanuele Ruffaldi,Matteo BAGHERI GHAVIFEKR. Владелец: Medical Microinstruments Inc. Дата публикации: 2024-04-25.

Method for detecting, based on the measurement or detection of velocities, operating anomalies of an unconstrained master device of a master-slave robotic system for medical or surgical teleoperation and related robotic system

Номер патента: CA3207771A1. Автор: Massimiliano Simi,Matteo Tanzini,Emanuele Ruffaldi,Matteo BAGHERI GHAVIFEKR. Владелец: Individual. Дата публикации: 2022-08-25.

Method for detecting, based on the measurement or detection of velocities, operating anomalies of an unconstrained master device of a master-slave robotic system for medical or surgical teleoperation and related robotic system

Номер патента: EP4294306A1. Автор: Massimiliano Simi,Matteo Tanzini,Emanuele Ruffaldi,Matteo BAGHERI GHAVIFEKR. Владелец: Medical Microinstruments Inc. Дата публикации: 2023-12-27.

Method for detecting, based on the measurement or detection of accelerations, operating anomalies of an unconstrained master device of a master-slave robotic system for medical or surgical teleoperation and related robotic system

Номер патента: CA3207740A1. Автор: Massimiliano Simi,Emanuele Ruffaldi. Владелец: Individual. Дата публикации: 2022-08-25.

Method for Obtaining Information Signatures from Nuclear Material or About the Presence, the Nature and/or the Shielding of a Nuclear Material and Measurement Setup for Performing Such Method

Номер патента: US20140264058A1. Автор: Rico Chandrasekharan,Ulisse GENDOTTI,Giovanna Davatz,David MURER. Владелец: Arktis Radiation Detectors Ltd. Дата публикации: 2014-09-18.

Method for preparing a biomass of stable freeze-dried bacterial cells and determining the stability thereof by means of a cytofluorometry metho

Номер патента: WO2020212961A1. Автор: Marco Pane,Vera Mogna,Serena ALLESINA. Владелец: PROBIOTICAL S.P.A.. Дата публикации: 2020-10-22.

Process for producing wine, method for modulating green character of wine, wine obtained or obtainable by such process or method, and use of a vine-shoot material as winemaking additive

Номер патента: EP4263782A1. Автор: María Rosario Salinas Fernández,Cristina Cebrián Tarancón,Amaya Zalacain Aramburu,Gonzalo Luis Alonso Díaz-Marta,Francisco De Asís Fernández Roldán. Владелец: UNIVERSIDAD DE CASTILLA LA MANCHA. Дата публикации: 2023-10-25.

Method for estimating a braking force applicable between pad and brake disc by an electric parking-braking system of a vehicle and electric parking-braking system of a vehicle implementing such method

Номер патента: EP3658429A1. Автор: Sergio Matteo Savaresi,Simone Formentin,Alfonso Tarantini,Gianmarco Rallo,Stefano Dossi,Giulio CALAMAI. Владелец: Freni Brembo Spa. Дата публикации: 2020-06-03.

Method for estimating a braking force applicable between pad and brake disc by an electric parking-braking system of a vehicle and electric parking-braking system of a vehicle implementing such method

Номер патента: US20210380089A1. Автор: Sergio Matteo Savaresi,Simone Formentin,Alfonso Tarantini,Gianmarco Rallo,Stefano Dossi,Giulio CALAMAI. Владелец: Freni Brembo Spa. Дата публикации: 2021-12-09.

Method for estimating a braking force applicable between pad and brake disc by an electric parking-braking system of a vehicle and electric parking-braking system of a vehicle implementing such method

Номер патента: WO2019021246A1. Автор: Sergio Matteo Savaresi,Simone Formentin,Alfonso Tarantini,Gianmarco Rallo,Stefano Dossi,Giulio CALAMAI. Владелец: FRENI BREMBO S.P.A.. Дата публикации: 2019-01-31.

Method for obtaining information signatures from nuclear material or about the presence, the nature and/or the shielding of a nuclear material and measurement setup for performing such method

Номер патента: EP2776870A1. Автор: Rico Chandrasekharan,Ulisse GENDOTTI,Giovanna Davatz,David MURER. Владелец: Arktis Radiation Detectors Ltd. Дата публикации: 2014-09-17.

Method for evaluating a suitability of lighting conditions for detecting an analyte in a sample using a camera of a mobile device

Номер патента: AU2019284820B2. Автор: Bernd Limburg,Max Berg,Fredrik Hailer,Timo Klein,Volker Tuerck,Christian Melchinger. Владелец: F Hoffmann La Roche AG. Дата публикации: 2024-07-04.

Process for producing wine, method for modulating green character of wine, wine obtained or obtainable by such process or method, and use of a vine-shoot material as winemaking additive

Номер патента: US20240052278A1. Автор: María Rosario Salinas Fernández,Cristina Cebrián Tarancón,Amaya Zalacain Aramburu,Gonzalo Luis Alonso Díaz-Marta,Francisco De Asís Fernández Roldán. Владелец: UNIVERSIDAD DE CASTILLA LA MANCHA. Дата публикации: 2024-02-15.

Sealing device having a sleeve for the passage of a connecting rod of a system for controlling the orientation of the blower blades of a turboprop engine through a partition

Номер патента: US09416733B2. Автор: Francois Gallet. Владелец: SNECMA SAS. Дата публикации: 2016-08-16.

Method for detaching or separating a sealing film or foil sealingly attached to the rim of the neck of a bottle, or the like, and a screw cap for implementation of said method

Номер патента: US9517869B2. Автор: Rainer Ammann. Владелец: Individual. Дата публикации: 2016-12-13.

Method for reducing the volume of atmosphere needed to inhibit ingress of ambient oxygen into the furnace chamber of a continuous heat treatment furnace

Номер патента: CA1215900A. Автор: Alan J.F. Paterson. Владелец: Air Products and Chemicals Inc. Дата публикации: 1986-12-30.

A method for manufacturing a dual-purpose container and a container pre-assembly having a tear-out section, and the pre-assembly and the container

Номер патента: CA2791208C. Автор: Troy Little,Jamie L. Laughman. Владелец: York Container Co. Дата публикации: 2016-10-25.

Method for generating grinding of a gear wheel workpiece and grinding machine having a controller for generating grinding of a gear wheel workpiece

Номер патента: CA3038931A1. Автор: Olaf Vogel. Владелец: Klingelnberg GmbH. Дата публикации: 2019-10-17.

Method for reducing the volume of atmosphere needed to inhibit ingress of ambient oxygen into the furnace chamber of a continuous heat treatment furnace

Номер патента: US4551091A. Автор: Alan J. F. Paterson. Владелец: Air Products and Chemicals Inc. Дата публикации: 1985-11-05.

Indicator Fluids, Systems, and Methods for Assessing Movement of Substances Within, To or From a Cerebrospinal Fluid, Brain or Spinal Cord Compartment of a Cranio-Spinal Cavity of a Human

Номер патента: US20200170509A1. Автор: Per Kristian Eide,Geir Andre RINGSTAD. Владелец: Brainwidesolutions As. Дата публикации: 2020-06-04.

Systems and methods for generating voxel-based three-dimensional objects in a virtual space based on natural language processing (NLP) of a user-provided description

Номер патента: US11568600B2. Автор: John Linden,Cameron Thacker. Владелец: Mythical Inc. Дата публикации: 2023-01-31.

Systems and methods for generating voxel-based three-dimensional objects in a virtual space based on natural language processing (NLP) of a user-provided description

Номер патента: US11232631B1. Автор: John Linden,Cameron Thacker. Владелец: Mythical Inc. Дата публикации: 2022-01-25.

Fixing device for fixing an image on a recording material and having a spacer between a projection of a nip plate and portions of a supporting member

Номер патента: US9977381B2. Автор: Koji Yasui,Takaaki Tsuruya. Владелец: Canon Inc. Дата публикации: 2018-05-22.

Method for creating a transition from an edge of an add-on part mounted on the outer surface of a rotor blade

Номер патента: US20220186706A1. Автор: Hartwig Lohse,Giridhar Ramanujam,Ane Kold di Gennaro. Владелец: Siemens Gamesa Renewable Energy AS. Дата публикации: 2022-06-16.

Scanning device having a holding fixture for cooling of a pickup

Номер патента: US20100103794A1. Автор: Stephan Knappmann,Juergen Moessner. Владелец: Individual. Дата публикации: 2010-04-29.

Method for creating a transition from an edge of an add-on part mounted on the outer surface of a rotor blade

Номер патента: EP3914824A1. Автор: Hartwig Lohse,Giridhar Ramanujam,Ane Kold di Gennaro. Владелец: Siemens Gamesa Renewable Energy AS. Дата публикации: 2021-12-01.

Flexible tool and method for creating a transition from an edge of an add-on part mounted on the outer surface of a rotor blade

Номер патента: EP4202203A1. Автор: Hartwig Lohse,Giridhar Ramanujam,Ane Kold di Gennaro. Владелец: Siemens Gamesa Renewable Energy AS. Дата публикации: 2023-06-28.

Device and method for laminating a laminating foil element onto a component, device and method for applying adhesive, system for laminating, component to be laminated with a laminating foil element, and use of a deposit part for keeping ready a laminating foil element

Номер патента: US20200108590A1. Автор: Andreas Dandl,Hubert Rehrl,Josef REHRL. Владелец: KIEFEL GMBH. Дата публикации: 2020-04-09.

Method for automatically maintaining and improving a hydraulic model for a water distribution network, and controlling the operation of a water distribution network using the maintained hydraulic model

Номер патента: AU2022334836A1. Автор: Ivan STOIANOV,Filippo PECCI,Alexander Waldron. Владелец: Imperial College Innovations Ltd. Дата публикации: 2024-03-14.

Method for detecting at least one gas quantity of at least one predetermined gas by a measurement sensor of a plurality of gases

Номер патента: US11988624B2. Автор: Jean-Christophe Mifsud,Franck Ben Hamouda. Владелец: Ellona SAS. Дата публикации: 2024-05-21.

System and method for tracking a box and correlating a quality characteristic of the box to an overall equipment effectiveness of a packaging line that manipulates the box during a product packaging process

Номер патента: WO2017192680A1. Автор: Ernest Barfield Widner,Michael T. Payne. Владелец: GEORGIA-PACIFIC CORRUGATED LLC. Дата публикации: 2017-11-09.

Systems and methods for generating voxel-based three-dimensional objects in a virtual space based on natural language processing (nlp) of a user-provided description

Номер патента: US20220084284A1. Автор: John Linden,Cameron Thacker. Владелец: Mythical Inc. Дата публикации: 2022-03-17.

METHOD FOR TREATING HUMAN TUMOR CELLS WITH A NEWCASTLE DISEASE VIRUS STRAIN HAVING A p53 INDEPENDENT ONCOLYTIC EFFECT

Номер патента: WO2005051330B1. Автор: Zsolt Fabian,Joseph Szeberenyi,Laszlo K Csatary. Владелец: United Cancer Res Inst. Дата публикации: 2005-12-01.

Device and method for determining whether there is a moveable object located in a scene at least a predetermined portion of a given period of time

Номер патента: US20230360235A1. Автор: Håkan Ardö,Axel Keskikangas,Niclas Danielsson. Владелец: AXIS AB. Дата публикации: 2023-11-09.

Scanning device having a holding fixture for cooling of a pickup

Номер патента: EP2143106A1. Автор: Stephan Knappmann,Juergen Moessner. Владелец: Thomson Licensing SAS. Дата публикации: 2010-01-13.

Electric power steering system having a rack for moving wheels of a vehicle and method for the initial assembly of an electric power steering system of this kind

Номер патента: US20220315094A1. Автор: Jens Petersen,Eduard Span,Timm Leuerer,Gregor Watzlawek,Yavuz Demir,Frank Jaehde,Frederick Wilms,Ali Al-Jabri. Владелец: ZF Automotive Germany GmbH. Дата публикации: 2022-10-06.

Method for detecting a leak in a liquid line, and water meter having a controller for carrying out the method

Номер патента: US20200217744A1. Автор: Torsten Meier,Achim Mielke,Waldemar Gaida,Daniel Radermacher,Bert Depiere,Heiko SCHOENBECK. Владелец: GROHE AG. Дата публикации: 2020-07-09.

Method for producing a media-tight material composite, metal sleeve and sensor having a metal sleeve of this type

Номер патента: US20220347901A1. Автор: Hans Michael Finke,Andreas Armin Neuner. Владелец: FRANZ BINDER GmbH AND CO ELEKTRISCHE BAUELEMENTE KG. Дата публикации: 2022-11-03.

Optical element having a coating for enhanced visibility of a mark and method for making the optical element

Номер патента: US10371866B2. Автор: Kevin J. Stewart,Joseph D. Turpen,Jennine M. Frease,William D. Carpenter. Владелец: Transitions Optical Ltd. Дата публикации: 2019-08-06.

Coating and method for testing plano and spherical wavefront producing optical surfaces and systems having a broad range of reflectivities

Номер патента: US4820049A. Автор: James F. Biegen. Владелец: Zygo Corp. Дата публикации: 1989-04-11.

Device and method for detecting the steering wheel position, the steering wheel angle and the inclination of the steering wheel of a vehicle

Номер патента: US11835332B2. Автор: ISMAIL KURT,Stefan Müller,Thomas Tentrup,Rainer Weisgerber. Владелец: DUERR ASSEMBLY PRODUCTS GMBH. Дата публикации: 2023-12-05.

Image heating apparatus and image forming apparatus having a controller that controls temperature of a rotatable member based on execution of a rubbing process

Номер патента: US20180321622A1. Автор: Tomohiko Yoshimura. Владелец: Canon Inc. Дата публикации: 2018-11-08.

Medical apparatus having a socket unit for connection of a device for supplying medical fluids, and device for supplying medical fluids having a plug unit for connection to a medical apparatus

Номер патента: CA2864472C. Автор: Gökhan Örter,Thomas Faulhaber,Jörn Hörmann,Franz Kugelmann,Rafael Sterzer,Matthias Brandl. Владелец: FRESENIUS MEDICAL CARE DEUTSCHLAND GMBH. Дата публикации: 2019-12-17.

Hoselike member having a circumference which is composed of a number of metal wires or tubes

Номер патента: AU2003282060A1. Автор: Soren B. Olsen,Carsten Post. Владелец: NORSK HYDRO ASA. Дата публикации: 2004-06-15.

Measuring device for analyzing the composition of a fuel gas, having a filter chamber arranged upstream of a detector

Номер патента: US11796456B2. Автор: Wolfgang Kleemann,Carsten Rathke,Susanne Wiedemann,Matias-Hugo Clavin,Juergen Kappler. Владелец: ABB Schweiz AG. Дата публикации: 2023-10-24.

Hoselike member having a circumference which is composed of a number of metal wires or tubes

Номер патента: WO2004046601A1. Автор: Soren B. Olsen,Carsten Post. Владелец: NORSK HYDRO ASA. Дата публикации: 2004-06-03.

Hoselike member having a circumference which is composed of a number of metal wires or tubes

Номер патента: EP1563215A1. Автор: Soren B. Olsen,Carsten Post. Владелец: NORSK HYDRO ASA. Дата публикации: 2005-08-17.

System and apparatus having a seal member for sealing of a device under test

Номер патента: US12000487B2. Автор: Christopher Wade Ackerman,Paul Diglio,Craig Yost. Владелец: Intel Corp. Дата публикации: 2024-06-04.

System and apparatus having a seal member for sealing of a device under test

Номер патента: US20240068572A1. Автор: Christopher Wade Ackerman,Paul Diglio,Craig Yost. Владелец: Intel Corp. Дата публикации: 2024-02-29.

Connection device, ceiling formwork system having a connection device, and use of a connection device

Номер патента: US20240175275A1. Автор: Florian Sturm. Владелец: Peri SE. Дата публикации: 2024-05-30.

A cassette and an appurtenant apparatus having a screen for cyclical displaying of a plurality of pictures

Номер патента: WO1983002517A1. Автор: Jon Holk. Владелец: Jon Holk. Дата публикации: 1983-07-21.

Urinary catheter assembly having a urinary catheter sealed inside of a closed package

Номер патента: US11998705B2. Автор: Lars Olav Schertiger,Chaabane Bougherara. Владелец: Coloplast AS. Дата публикации: 2024-06-04.

Optical device for augmented reality having a function of adjusting depth of a virtual image

Номер патента: US20240019706A1. Автор: Soon Gi PARK,Jeong Hun Ha. Владелец: LetinAR Co Ltd. Дата публикации: 2024-01-18.

Connection device, ceiling formwork system having a connection device, and use of a connection device

Номер патента: AU2021431649A1. Автор: Florian Sturm. Владелец: Peri SE. Дата публикации: 2023-09-21.

Manufacture of a substrate having a modified orientation layer and of a liquid crystalline display device comprising such a substrate

Номер патента: US5705220A. Автор: Nicolaas P. Willard,Gerard Cnossen. Владелец: US Philips Corp. Дата публикации: 1998-01-06.

Recording apparatus and control method of recording apparatus having a conveyance roller pair upstream of a recording unit

Номер патента: US20150022578A1. Автор: Yuji Takayama,Keisei Hakamata. Владелец: Canon Inc. Дата публикации: 2015-01-22.

Radial vehicle tire having a rubber rim strip, use of a rubber rim strip, and a vehicle wheel system comprising the radial vehicle tire

Номер патента: US20230202243A1. Автор: Sascha Funk-Friedek,Justus Römer,Matthias Plückers,Mario Montalvo. Владелец: CONTINENTAL REIFEN DEUTSCHLAND GMBH. Дата публикации: 2023-06-29.

Amperometric sensor for measuring free chlorine with reference electrode having a gold electrode surface composed of a string of electrically connected, spaced apart surface parts

Номер патента: EP4070088A1. Автор: Maurice Paul Tax,Jerome LOGIE,Matthew Gilbert MULLER. Владелец: Innovative Water Care Llc. Дата публикации: 2022-10-12.

Electric machine having a housing in the form of a drive bearing and having an internal gear mounted therein

Номер патента: US09982648B2. Автор: Bernhard Bauer,Stefan Erlenmaier,Frank Reschnar,Mike Foell,Jean-Philipp Caro. Владелец: ROBERT BOSCH GMBH. Дата публикации: 2018-05-29.

Test bench combining high-frequency tribological stress and oligocyclic fatigue, on a blade disk of turboshaft engine of an aircraft including a test piece having a portion with a shape of a blade root of a rotor and is engaged in a groove shape complementary to another test piece

Номер патента: US09869621B2. Автор: Laurent Houze,Jean Vincent Manuel Meriaux,Jean Philippe Lapuyade,Franck Vernis,Francois Vogel. Владелец: Turbomeca SA. Дата публикации: 2018-01-16.

Rotorcraft top fairing having a profile in the shape of a truncated drop of water that is provided with a hump of uneven surface

Номер патента: US09694899B2. Автор: David Alfano. Владелец: Airbus Helicopters SAS. Дата публикации: 2017-07-04.

Vehicle having a component cooled by means of a cooling air mass flow

Номер патента: US09677457B2. Автор: Thomas Brendel,Arnd Rueter,Frank Elsenheimer. Владелец: SIEMENS AG. Дата публикации: 2017-06-13.

Non-dash neck method for single crystal silicon growth

Номер патента: EP1012357A1. Автор: Kyong-Min Kim,Sadasivam Chandrasekhar. Владелец: SunEdison Inc. Дата публикации: 2000-06-28.

Method for fabricating ultra thin single-crystal metal oxide wave retarder plates and a waveguide polarization mode converter using the same

Номер патента: WO2001075195A3. Автор: Miguel Levy,Richard M Osgood Jr,Antonije M Radojevic. Владелец: Antonije M Radojevic. Дата публикации: 2002-02-28.

Method of producing semiconductor single crystal

Номер патента: US09797068B2. Автор: Takashi Sakurada,Tomohiro Kawase,Yoshiaki Hagi. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2017-10-24.

Apparatus and method for presenting structure information about a technical object

Номер патента: RU2682925C2. Автор: Херманн Георг МАЙЕР. Владелец: СИМЕНС АКЦИЕНГЕЗЕЛЛЬШАФТ. Дата публикации: 2019-03-22.

Semiconductor device test system and method

Номер патента: US20080246505A1. Автор: Carsten Ohlhoff,Markus Kollwitz. Владелец: Qimonda AG. Дата публикации: 2008-10-09.

System and method for forming suture thread units

Номер патента: RU2745134C2. Автор: Чун-чиа ЦЗЮАНЬ,Юй-ших ВЭН,Шу-Лин ЧЭН. Владелец: Терумо Медикал Корпорейшн. Дата публикации: 2021-03-22.

Method and apparatus for producing single crystals composed of semiconductor material

Номер патента: US09422636B2. Автор: Joerg Fischer,Helge Riemann,Matthias Renner,Nikolai V. Abrosimov. Владелец: Forschungsverbund Berlin FVB eV. Дата публикации: 2016-08-23.

Nucleic acid separating vessel, a method of manufacturing the nucleic acid separating vessel, and a method for separating the nucleic acid

Номер патента: US6326189B1. Автор: Tetsuo Yokoyama,Shinichi Fukuzono,Yoshishige Endo,Yukiko Ikeda. Владелец: HITACHI LTD. Дата публикации: 2001-12-04.

Method for determining a cooling structure

Номер патента: WO2024069484A1. Автор: Remco Van Erp,Miguel Angel Salazar De Troya,Athanasios Boutsikakis. Владелец: Corintis Sa. Дата публикации: 2024-04-04.

Method for manufacturing etching mask pattern, and resin composition for forming etching mask pattern

Номер патента: US20240361686A1. Автор: Takahiro Dazai,Takehiro Seshimo,Teruaki Hayakawa,Ryota Uehara,Shinsuke Maekawa. Владелец: Tokyo Institute of Technology NUC. Дата публикации: 2024-10-31.

Method for forming saw-cuts into a semiconductor product

Номер патента: NL2034529B1. Автор: Hermans Mark. Владелец: Besi Netherlands Bv. Дата публикации: 2024-10-14.

Method for deterrmining a cooling structure

Номер патента: EP4345679A1. Автор: Remco Van Erp,Miguel Angel Salazar De Troya,Athanasios Boutsikakis. Владелец: Corintis Sa. Дата публикации: 2024-04-03.

Structure of a plastic container having a flange, mould thereof and method for manufacturing the same

Номер патента: US20110240661A1. Автор: Frank Ko. Владелец: Suzhou Kefu Gift Ind Co Ltd. Дата публикации: 2011-10-06.

Method for arming and accelerating the projectile and the installation of percussion action for its implementation

Номер патента: RU2762133C1. Автор: Виктор Георгиевич Зедгенизов,Дмитрий Владимирович Кокоуров,Татьяна Александровна Сенотрусова. Владелец: федеральное государственное бюджетное образовательное учреждение высшего образования "Иркутский национальный исследовательский технический университет" (ФГБОУ ВО "ИРНИТУ"). Дата публикации: 2021-12-16.

Method of producing semiconductor single crystal

Номер патента: US20130008370A1. Автор: Takashi Sakurada,Tomohiro Kawase,Yoshiaki Hagi. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2013-01-10.

Systems and methods for fabricating displacement scales

Номер патента: EP2162705A2. Автор: Alan B. Campbell,Dale L. Ehnes,Daniel S. Wertz,Levent Biyikli,Daniel H. Carlson,Luis A. Aguirre. Владелец: 3M Innovative Properties Co. Дата публикации: 2010-03-17.

Systems and methods for fabricating displacement scales

Номер патента: US09513412B2. Автор: Alan B. Campbell,Dale L. Ehnes,Daniel S. Wertz,Levent Biyikli,Daniel H. Carlson,Luis A. Aguirre. Владелец: 3M Innovative Properties Co. Дата публикации: 2016-12-06.

Method for forming a magnetic head for perpendicular magnetic recording

Номер патента: US09449635B2. Автор: Sue Siyang Zhang,Wen-Chien David Hsiao,Kyusik Shin. Владелец: HGST NETHERLANDS BV. Дата публикации: 2016-09-20.

Method for forming a block of ice for subsequent movement thereof

Номер патента: RU2770219C1. Автор: Юрий Васильевич Иванщиков,Юрий Николаевич Доброхотов,Андрей Евгеньевич Макушев,Николай Николаевич Пушкаренко,Людмила Михайловна Корнилова. Владелец: Федеральное государственное бюджетное образовательное учреждение высшего образования "Чувашский государственный аграрный университет". Дата публикации: 2022-04-14.

Method for creating a pattern on a wafer using a single photomask

Номер патента: WO2004077163A3. Автор: Jan Willem Gemmink,Patrice Declementi. Владелец: Patrice Declementi. Дата публикации: 2005-01-13.

Hybrid resin-based blank for dental cutting, and method for manufacturing crown

Номер патента: EP4427723A1. Автор: Yuukou Nagasawa,Shintaro Yamane. Владелец: Tokuyama Dental Corp. Дата публикации: 2024-09-11.

Manufacturing system configured to carry out a method for additively manufacturing a plurality of ophthalmic devices and such a method

Номер патента: EP4384385A1. Автор: Laurent Huprel,Maxime LECOMPERE,Pierre LEITE. Владелец: Essilor International SAS. Дата публикации: 2024-06-19.

Structural adhesive sheet specifically for use in a mirror base of an automobile interior rear-view mirror and a method for producing the same

Номер патента: US09574120B2. Автор: Huan Wu,Deheng Zhang,Junshi KONG,Wenli LI,Yajuan YANG. Владелец: ZHENGZHOU ZHONGYUAN APPLIED TECHNOLOGY RESEARCH AND DEVELOPMENT Co Ltd. Дата публикации: 2017-02-21.

System and method for accessing dimensional databases

Номер патента: US09495437B1. Автор: Jan Henrik Jonsson,Debbie M. Peabody,Aleksey Mikhailovich Bazhenov. Владелец: Dell Software Inc. Дата публикации: 2016-11-15.

Geocellular material and method for manufacture thereof

Номер патента: RU2753486C2. Автор: Мань Чжан,Юнкун ВЭЙ. Владелец: Ланьчжоу Деке Инджиниринг Матириалз Ко., Лтд. Дата публикации: 2021-08-17.

Method of production of silicon carbide single crystal

Номер патента: US20060292057A1. Автор: Masateru Nakamura. Владелец: Toyota Motor Corp. Дата публикации: 2006-12-28.

System apparatus and method for manufacturing a body support article and/or a body support article cover containing segments from stitching or quilting and having gel-type structures and/or gel-type structures integrated with foam

Номер патента: WO2024059349A3. Автор: Josh Micklos. Владелец: Elements Group LLC. Дата публикации: 2024-05-02.

System apparatus and method for manufacturing a body support article and/or a body support article cover containing segments from stitching or quilting and having gel-type structures and/or gel-type structures integrated with foam

Номер патента: WO2024059349A2. Автор: Josh Micklos. Владелец: Elements Group LLC. Дата публикации: 2024-03-21.

Apparatus and method for forming an article

Номер патента: US20010048185A1. Автор: Donald Weder,Frank Craig,Michael King. Владелец: Individual. Дата публикации: 2001-12-06.

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Номер патента: EP3053016A1. Автор: Richard Daniel Albarran,William Clayton Pugh,Jason Bruce Craig,Scott Dewey BLAIR, Jr.. Владелец: InScope Energy LLC. Дата публикации: 2016-08-10.

Aluminum alloy member for forming fluoride film and aluminum alloy member having fluoride film

Номер патента: US12054811B2. Автор: Isao Murase. Владелец: Showa Denko KK. Дата публикации: 2024-08-06.

Method for purifying single-stranded dna

Номер патента: EP4407033A1. Автор: Juan Chen,Lumeng YE. Владелец: Nanjing Jinsirui Science and Technology Biology Corp. Дата публикации: 2024-07-31.

System and method for optical fiber preform preparation via high-surface-area coating

Номер патента: WO2021252098A1. Автор: Tayyab I. SURATWALA,Jay W. Dawson,Nick Schenkel,Michael MESSERLY,Koroush Sasan,Andrew LANGE,Rebecca Dylla-Spears,Cody Wren MART. Владелец: Lawrence Livermore National Security, LLC. Дата публикации: 2021-12-16.

Method for producing silicon oxycarbide fibers

Номер патента: EP1408019A3. Автор: Gian Domenico Soraru',Sandra Dire',Alberto Berlinghieri. Владелец: Universita degli Studi di Trento. Дата публикации: 2009-07-22.

System and method for an easily-erectable modular business cubicle

Номер патента: US12049756B2. Автор: Jay A. Berkowitz. Владелец: Individual. Дата публикации: 2024-07-30.

Hydrothermal method for growth of alkaline earth metal stannate bulk single crystals and crystals formed thereby

Номер патента: US11840772B2. Автор: Joseph W. Kolis,Colin D. McMillen,Rylan J. Terry. Владелец: Clemson University Research Foundation (CURF). Дата публикации: 2023-12-12.

Production method for color filter

Номер патента: US20070207265A1. Автор: Masafumi Kamada,Yuka Tachikawa,Takayuki Tazaki. Владелец: DAI NIPPON PRINTING CO LTD. Дата публикации: 2007-09-06.

Single-edge drill for forming a deep hole

Номер патента: US20210260670A1. Автор: Takeshi Naito,Takahiro Kawano,Yuuki Nishimura. Владелец: Nishiken Inc. Дата публикации: 2021-08-26.

Method for growing a GaN single crystal film on a buffer layer on a ScAlMgO4 substrate and performing cooling so that the GaN film is peeled from the ScAlMgO4 substrate

Номер патента: US12065755B2. Автор: Haitao Zhang,Bin Xu,Bo PANG,Lianghong Liu. Владелец: Wuxi Wuyue Semiconductor Co ltd. Дата публикации: 2024-08-20.

Hydrothermal method for growth of alkaline earth metal stannate bulk single crystals and crystals formed thereby

Номер патента: US20220235488A1. Автор: Joseph W. Kolis,Colin D. McMillen,Rylan J. Terry. Владелец: Clemson University. Дата публикации: 2022-07-28.

Semiconductor device having reduced leakage and method of operating the same

Номер патента: US20020181291A1. Автор: Shi-Tron Lin,Wei-Fan Chen,Chen-Hsin Lien. Владелец: Winbond Electronics Corp. Дата публикации: 2002-12-05.

Laminate for radiational cooling, and method for preparing the same

Номер патента: US12098892B2. Автор: Jin Woo Lee,Byung Wook KIM,Min Jae Lee,Seung Hwan KO,Yeong Ju Jung. Владелец: Kia Corp. Дата публикации: 2024-09-24.

Systems and methods for monitoring and/or controlling resources of building structures via a dashboard interface

Номер патента: WO2015051209A1. Автор: Richard Daniel Albarran,William Clayton Pugh,Jason Bruce Craig,Scott Dewey BLAIR, Jr.. Владелец: INSCOPE ENERGY, LLC. Дата публикации: 2015-04-09.

System and method for optical fiber preform preparation via high-surface-area coating

Номер патента: EP4164991A1. Автор: Tayyab I. SURATWALA,Jay W. Dawson,Nick Schenkel,Michael MESSERLY,Koroush Sasan,Andrew LANGE,Rebecca Dylla-Spears,Cody Wren MART. Владелец: Lawrence Livermore National Security LLC. Дата публикации: 2023-04-19.

Heat transfer element, method for forming the same and semiconductor structure comprising the same

Номер патента: US12111114B2. Автор: Po-Cheng Huang,Shin-Luh Tarng,Ian HU,Hung-Hsien Huang,Chien-Neng Liao,Jui-Cheng Yu. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2024-10-08.

Method for manufacturing liquid crystal display device

Номер патента: US09864236B2. Автор: Isamu Miyake,Koichi Miyachi,Yuko Teraoka. Владелец: Sharp Corp. Дата публикации: 2018-01-09.

Method for thermally monitoring process for forming plastic blow-molded containers

Номер патента: US09778031B2. Автор: Russell Varone,Patrick M. O'connell,Garrett R. Pennington. Владелец: Graham Packaging Co LP. Дата публикации: 2017-10-03.

Method for manufacturing liquid crystal display device

Номер патента: US09671650B2. Автор: Isamu Miyake,Koichi Miyachi,Yuko Teraoka. Владелец: Sharp Corp. Дата публикации: 2017-06-06.

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Номер патента: US6296466B2. Автор: Donald E. Weder,Frank Craig,Michael J. King. Владелец: Southpac Trust International Inc, Highland. Дата публикации: 2001-10-02.

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Номер патента: EP1738375A1. Автор: Mohamed Azimane. Владелец: KONINKLIJKE PHILIPS ELECTRONICS NV. Дата публикации: 2007-01-03.

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Номер патента: US20050216799A1. Автор: Mohamed Azimane. Владелец: Individual. Дата публикации: 2005-09-29.

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Номер патента: US20120140331A1. Автор: Jin Ho Park,Young Je Yun. Владелец: Dongbu HitekCo Ltd. Дата публикации: 2012-06-07.

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Номер патента: WO2007084671A2. Автор: John M. Romita. Владелец: The Segerdahl Corp.. Дата публикации: 2007-07-26.

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Номер патента: CA2489714C. Автор: Robert J. Filkins,Peter W. Lorraine,Laurence Bigio. Владелец: Lockheed Martin Corp. Дата публикации: 2009-04-07.

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Номер патента: US20120003795A1. Автор: . Владелец: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.. Дата публикации: 2012-01-05.

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Номер патента: US20120002088A1. Автор: FUKUSHIMA Noriyuki. Владелец: SONY CORPORATION. Дата публикации: 2012-01-05.

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Номер патента: US20120001226A1. Автор: . Владелец: Sanken Electric Co., Ltd.. Дата публикации: 2012-01-05.

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Номер патента: US20120001291A1. Автор: Kokumai Kazuo. Владелец: CANON KABUSHIKI KAISHA. Дата публикации: 2012-01-05.

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Номер патента: US20120001953A1. Автор: Yamazaki Shunpei,Hirakata Yoshiharu. Владелец: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.. Дата публикации: 2012-01-05.

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Номер патента: US20120001342A1. Автор: . Владелец: RENESAS ELECTRONICS CORPORATION. Дата публикации: 2012-01-05.

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Номер патента: US20120001257A1. Автор: MURAKAWA Kouichi. Владелец: RENESAS ELECTRONICS CORPORATION. Дата публикации: 2012-01-05.

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Номер патента: US20120001255A1. Автор: PARK JIN WON. Владелец: HYNIX SEMICONDUCTOR INC.. Дата публикации: 2012-01-05.

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Номер патента: US20120000512A1. Автор: HASHIMOTO Masanori,SAITO Kazuya,SHIMIZU Miho. Владелец: . Дата публикации: 2012-01-05.

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Номер патента: US20120000414A1. Автор: Schowalter Leo J.,Bondokov Robert T.,Rao Shailaja P.,Gibb Shawn Robert. Владелец: . Дата публикации: 2012-01-05.

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Номер патента: US20120001350A1. Автор: . Владелец: . Дата публикации: 2012-01-05.

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