METHODS OF FABRICATING SEMICONDUCTOR DEVICE HAVING SHALLOW TRENCH ISOLATION (STI).

METHODS OF FABRICATING SEMICONDUCTOR DEVICE HAVING SHALLOW TRENCH ISOLATION (STI)

Номер патента: US20140227856A1
Опубликовано: 14-08-2014
Автор(ы): Park Sung-Wook, PARK Tai-Su, SEO Mi-Young
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.
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Рисунок 1. Взаимосвязь патентов (ближайшие 20).

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