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Ncf for pressure mounting, cured product thereof, and semiconductor device including same

Номер патента: US20200207977A1
Опубликовано: 02-07-2020
Автор(ы): Hiromi Saito, Kenichi Tosaka, Masaaki Hoshiyama, Toyokazu Hotchi, Yoshihide FUKUHARA
Принадлежит: Namics Corp
Получить PDF файл: Открыть в новом окне

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Номер патента: KR102083777B1. Автор: 시게오 나카무라,요시오 니시무라. Владелец: 아지노모토 가부시키가이샤. Дата публикации: 2020-03-03.

RESIN COMPOSITION AND CURED PRODUCT OF SAME, ADHESIVE FOR ELECTRONIC COMPONENT, SEMICONDUCTOR DEVICE, AND ELECTRONIC COMPONENT

Номер патента: US20200407486A1. Автор: ABE Nobuyuki,IWAYA Kazuki. Владелец: . Дата публикации: 2020-12-31.

UV-curable silicone composition, cured products thereof, and methods of using the same

Номер патента: US09732239B2. Автор: Bianxiao Zhong,Terry Clapp,Jonathan Hannington. Владелец: Dow Corning Corp. Дата публикации: 2017-08-15.

Curable composition, cured product thereof, and wafer level lens

Номер патента: US09856347B2. Автор: Hiroki Takenaka,Kyohei Ishida. Владелец: Daicel Corp. Дата публикации: 2018-01-02.

Thermal interface material paste and semiconductor package

Номер патента: US11876031B2. Автор: Wonkeun Kim,Joungphil LEE,Mihyae PARK. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-01-16.

Polyorganosiloxane cured product film, use thereof, and method for producing same

Номер патента: CN112673056A. Автор: 福井弘,津田武明,神永洋一. Владелец: Dow Corning Toray Co Ltd. Дата публикации: 2021-04-16.

Thermally conductive sheet, cured product thereof, and semiconductor device

Номер патента: US20160002520A1. Автор: Kazuya Kitagawa,Shunsuke Mochizuki,Yoji Shirato,Kazuya Hirasawa,Motomi Kurokawa,Mika Tsuda,Keita Nagahashi. Владелец: Sumitomo Bakelite Co Ltd. Дата публикации: 2016-01-07.

Electroluminescent device and semiconductor nanoparticle

Номер патента: US20230079704A1. Автор: Sung Woo Kim,Eun Joo Jang,Hyo Sook JANG,Yuho WON. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-03-16.

Core shell quantum dot, production method thereof, and electronic device including the same

Номер патента: US11987739B2. Автор: Eun Joo Jang,Jihyun MIN,Sungwoo HWANG,Soo Kyung Kwon,Yong Wook Kim,Seon-Yeong Kim,Ji-Yeong KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-05-21.

Metal structure and method of manufacturing the same and metal wire and semiconductor device and electronic device

Номер патента: US20210028024A1. Автор: Do Yoon Kim,Kenji Takai,Boun Yoon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-01-28.

Adhesive film for semiconductor, and semiconductor device

Номер патента: US10818610B2. Автор: Young Kook Kim,Kwang Joo Lee,Hee Jung Kim,Nu Ri Na. Владелец: LG Chem Ltd. Дата публикации: 2020-10-27.

Multi-layer wiring substrate and semiconductor device

Номер патента: US20200058577A1. Автор: Masaki Yoshida,Satoko Ohashi. Владелец: Namics Corp. Дата публикации: 2020-02-20.

Underwater curable epoxy resin composition, underwater curable paint, cured products thereof, and underwater curable epoxy resin curing agent mixture

Номер патента: EP4431540A1. Автор: Yuki Kawashima,Takuma HANAOKA. Владелец: Mitsubishi Gas Chemical Co Inc. Дата публикации: 2024-09-18.

Electromagnetic wave shielding support base-attached encapsulant, encapsulated substrate having semicondutor devices mounted thereon, encapsulated wafer having semiconductor devices formed thereon, and semiconductor apparatus

Номер патента: US09865518B2. Автор: Toshio Shiobara,Tomoaki Nakamura,Hideki Akiba,Shinsuke Yamaguchi. Владелец: Shin Etsu Chemical Co Ltd. Дата публикации: 2018-01-09.

Curable resin, curable resin composition, and cured product

Номер патента: US20230272156A1. Автор: Ryuichi Matsuoka,Hiroyoshi KANNARI,Lichen Yang. Владелец: DIC Corp. Дата публикации: 2023-08-31.

Epoxy resin, curable resin composition, cured product thereof, and printed circuit board

Номер патента: US09736926B2. Автор: Yutaka Satou. Владелец: DIC Corp. Дата публикации: 2017-08-15.

Heat-conductive fluorinated curable composition, cured product thereof, and electric/electronic part

Номер патента: US20170121583A1. Автор: Akihiro Endo,Hidenori Koshikawa. Владелец: Shin Etsu Chemical Co Ltd. Дата публикации: 2017-05-04.

BINDERS FOR PRESSURE SENSITIVE ADHESIVES AND PROCESS FOR THE PRODUCTION THEREOF

Номер патента: DE2906968A1. Автор: Mats Sven Olof Dipl Hassander,Lars-Olof Dr Ing Ryrfors. Владелец: Hoechst Perstorp AB. Дата публикации: 1979-09-06.

Adhesive for endoscope, cured product thereof, and endoscope and manufacturing method thereof

Номер патента: EP3932970A1. Автор: Yoshihiro Nakai,Kazushi Furukawa. Владелец: Fujifilm Corp. Дата публикации: 2022-01-05.

Adhesive for endoscope, cured product thereof, endoscope and method for manufacturing the same

Номер патента: US20210380853A1. Автор: Yoshihiro Nakai,Kazushi Furukawa. Владелец: Fujifilm Corp. Дата публикации: 2021-12-09.

Epoxy resin composition, cured product thereof, and laminate

Номер патента: EP4438649A1. Автор: Kazuo Arita,Eriko Sato,Masato Otsu. Владелец: Kyushu University NUC. Дата публикации: 2024-10-02.

POPULATION OF METAL OXIDE NANOSHEETS, PREPARATION METHOD THEREOF, AND ELELCTRICAL CONDUCTOR AND ELECRONIC DEVICE INCLUDING THE SAME

Номер патента: US20170135208A1. Автор: Kim Se Yun,KWAK Chan,LEE Jongmin,HWANG Jinyoung,ROH Jong Wook,HWANG Sungwoo,JUNG Doh Won. Владелец: . Дата публикации: 2017-05-11.

Adhesive for endoscope and cured product thereof, and endoscope and method for producing the same

Номер патента: US12054650B2. Автор: Yoshihiro Nakai,Kazushi Furukawa. Владелец: Fujifilm Corp. Дата публикации: 2024-08-06.

Quantum dot light emitting device, light emitting layer and manufacturing method thereof, and display device

Номер патента: US12065600B2. Автор: Aidi ZHANG. Владелец: Beijing BOE Technology Development Co Ltd. Дата публикации: 2024-08-20.

Positive electrode active material, manufacturing method thereof, and lithium secondary battery including positive electrode including same

Номер патента: US20220407064A1. Автор: Ji Young Kim,Min Ho Seo. Владелец: SM Lab Co Ltd. Дата публикации: 2022-12-22.

DIELECTRIC MATERIAL, METHOD OF MANUFACTURING THEREOF, AND DIELECTRIC DEVICES AND ELECTRONIC DEVICES INCLUDING THE SAME

Номер патента: US20180257991A1. Автор: KWAK Chan,YANG Daejin,ROH Jong Wook,Kim Hyungjun,JUNG Doh Won. Владелец: . Дата публикации: 2018-09-13.

Dielectric material, metod of manufacturing thereof, and dielectric devices and electronic devices including the same

Номер патента: KR102392041B1. Автор: 김형준,정도원,곽찬,양대진,노종욱. Владелец: 삼성전자주식회사. Дата публикации: 2022-04-27.

Positive electrode active material, manufacturing method thereof, and lithium secondary battery including positive electrode including same

Номер патента: EP4084135A4. Автор: Ji Young Kim,Min Ho Seo. Владелец: SM Lab Co Ltd. Дата публикации: 2024-01-24.

Quantum dot light emitting device, light emitting layer and manufacturing method thereof, and display device

Номер патента: US20230174855A1. Автор: Aidi ZHANG. Владелец: Beijing BOE Technology Development Co Ltd. Дата публикации: 2023-06-08.

Photochromic curable composition, cured product thereof and laminate including the cured product

Номер патента: US09890324B2. Автор: Katsuhiro Mori,Junji Takenaka,Yasutomo Shimizu,Junji Momoda. Владелец: Tokuyama Corp. Дата публикации: 2018-02-13.

Oxide material and semiconductor device

Номер патента: US12057510B2. Автор: Shunpei Yamazaki,Tatsuya Honda,Motoki Nakashima. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2024-08-06.

Oxide film reaction surface control agent, method of forming oxide film using oxide film reaction surface control agent, semiconductor substrate including oxide film, and semiconductor device including semiconductor substrate

Номер патента: US20240352583A1. Автор: Seung Hyun Lee,Chang Bong Yeon,Jae Sun Jung,Deok Hyun Kim. Владелец: Soulbrain Co Ltd. Дата публикации: 2024-10-24.

Cesium-niobium-chalcogenide compounds and semiconductor devices including the same

Номер патента: US11866344B2. Автор: Nouar Tabet,Fadwa EL-MELLOUHI,Stefano Sanvito,Heesoo PARK,Fahhad ALHARBI. Владелец: Qatar Foundation for Education Science and Community Development. Дата публикации: 2024-01-09.

Cesium-niobium-chalcogenide compounds and semiconductor devices including the same

Номер патента: US20210269326A1. Автор: Nouar Tabet,Fadwa EL-MELLOUHI,Stefano Sanvito,Heesoo PARK,Fahhad ALHARBI. Владелец: College of the Holy and Undivided Trinity of Queen Elizabeth near Dublin. Дата публикации: 2021-09-02.

Cesium-niobium-chalcogenide compounds and semiconductor devices including the same

Номер патента: WO2019156580A2. Автор: Nouar Tabet,Fadwa EL-MELLOUHI,Stefano Sanvito,Heesoo PARK,Fahhad ALHARBI. Владелец: TRINITY COLLEGE DUBLIN. Дата публикации: 2019-08-15.

Oxide sintered body and method for manufacturing the same, sputtering target, and semiconductor device

Номер патента: US09957604B2. Автор: Kenichi Watatani,Koichi Sogabe,Miki Miyanaga. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2018-05-01.

Method of manufacturing semiconductor device and semiconductor manufacturing apparatus

Номер патента: US09728473B2. Автор: Masayuki Kitamura,Atsuko Sakata,Satoshi Wakatsuki. Владелец: Toshiba Corp. Дата публикации: 2017-08-08.

Method for manufacturing semiconductor device, and semiconductor wafer

Номер патента: US20230160104A1. Автор: Takashi Ishida,Shoichi Onda,Daisuke Kawaguchi,Jun Kojima,Chiaki Sasaoka,Yoshitaka Nagasato,Junji Ohara. Владелец: Mirise Technologies Corp. Дата публикации: 2023-05-25.

Semiconductor device, semiconductor device manufacturing method, and semiconductor device manufacturing apparatus

Номер патента: US20240130125A1. Автор: Masayuki Kitamura,Hiroshi Toyoda,Katsuaki Natori,Koji Yamakawa,Takayuki Beppu,Kenichiro TORATANI. Владелец: Kioxia Corp. Дата публикации: 2024-04-18.

Method for fabricating a semiconductor device using wet etching and dry etching and semiconductor device

Номер патента: US20240318320A1. Автор: Michael Ehmann,Matteo Dainese,Sigrid Wabnig,Hiroshi Narahashi,Saurabh Roy,Johanna Schlaminger,Katharina Teichmann. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2024-09-26.

Semiconductor device manufacturing method and semiconductor device

Номер патента: US09716006B2. Автор: Kenji Hamada,Naruhisa Miura,Yosuke Nakanishi. Владелец: Mitsubishi Electric Corp. Дата публикации: 2017-07-25.

Aluminum alloy film and semiconductor device using the same

Номер патента: US20220399455A1. Автор: Hiroki TSUMA. Владелец: Mirise Technologies Corp. Дата публикации: 2022-12-15.

Ultrawide bandgap semiconductor devices including magnesium germanium oxides

Номер патента: EP4430676A1. Автор: Petar Atanackovic. Владелец: Silanna UV Technologies Pte Ltd. Дата публикации: 2024-09-18.

Metal oxide thin film precursor, method of fabricating metal thin film using the same, and semiconductor device including the metal oxide thin film

Номер патента: US20240239817A1. Автор: Woojin JEON,Sang Wook Park,Jongwook Park,SunWoo PARK,Hayoon LEE,Yoona CHOI,Yeong Jae HEO. Владелец: Industry Academic Cooperation Foundation of Kyung Hee University. Дата публикации: 2024-07-18.

Fluorite-based material thin film and semiconductor device comprising the same

Номер патента: EP4008810A2. Автор: Jinseong Heo,Dukhyun CHOE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-06-08.

Method of Manufacturing Semiconductor Device, Substrate Processing Method and Apparatus, Non-Transitory Computer Readable Recording Medium, and Semiconductor Device

Номер патента: US20140084389A1. Автор: Arito Ogawa. Владелец: HITACHI KOKUSAI ELECTRIC INC. Дата публикации: 2014-03-27.

Oxide semiconductor and semiconductor device

Номер патента: US20200027955A1. Автор: Naoto Kikuchi,Shintarou Ikeda,Yoshihiro Aiura,Akane Samizo. Владелец: National Institute of Advanced Industrial Science and Technology AIST. Дата публикации: 2020-01-23.

Method of manufacturing silicon rich oxide (SRO) and semiconductor device employing SRO

Номер патента: US20070072424A1. Автор: Jung-hyun Lee,Sang-Bong Bang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2007-03-29.

Monocrystalline silicon carbide substrate, method for manufacturing the same, and semiconductor device

Номер патента: US20240105782A1. Автор: Jing Yao,Jian Yang,Guangming Wang,Chunjun Liu,Tonghua Peng,Yanfang LOU,Qing Yong. Владелец: Jiangsu Tankeblue Semiconductor Co Ltd. Дата публикации: 2024-03-28.

Method of manufacturing semiconductor device by plasma treatment and heat treatment, and semiconductor device

Номер патента: US09966447B2. Автор: Junya Nishii. Владелец: Toyoda Gosei Co Ltd. Дата публикации: 2018-05-08.

Substrate processing apparatus and semiconductor device manufacturing method

Номер патента: US09963785B2. Автор: Koichi Honda,Mamoru Umemoto,Masayuki Asai,Kazuyuki Okuda. Владелец: HITACHI KOKUSAI ELECTRIC INC. Дата публикации: 2018-05-08.

Method of manufacturing semiconductor device and semiconductor device

Номер патента: US09941112B2. Автор: Koji Ito,Kazuhiko Ito,Atsushi Ogasawara,Koya Muyari. Владелец: Shindengen Electric Manufacturing Co Ltd. Дата публикации: 2018-04-10.

Semiconductor manufacturing device and semiconductor manufacturing method

Номер патента: US09824905B2. Автор: Takeshi Watanabe,Takashi Imoto,Soichi Homma,Yuusuke Takano,Katsunori Shibuya. Владелец: Toshiba Memory Corp. Дата публикации: 2017-11-21.

Method of manufacturing semiconductor device and semiconductor manufacturing apparatus

Номер патента: US09779978B2. Автор: Junichi Wada,Masayuki Kitamura,Atsuko Sakata,Takeshi Ishizaki,Satoshi Wakatsuki,Shinya Okuda,Kei Watanabe,Daisuke Ikeno,Hirotaka Ogihara. Владелец: Toshiba Corp. Дата публикации: 2017-10-03.

Method for producing a semiconductor device, and semiconductor device

Номер патента: US09754783B2. Автор: Katsunori Ueno,Ryo Tanaka,Masaharu Edo,Shinya Takashima. Владелец: Fuji Electric Co Ltd. Дата публикации: 2017-09-05.

MODIFIED ACRYLIC RESIN CURED PRODUCT, AND LAMINATE THEREOF, AND PRODUCTION METHODS THEREFOR

Номер патента: US20180030230A1. Автор: OKAZAKI Koju. Владелец: Mitsui Chemicals, Inc.. Дата публикации: 2018-02-01.

Wiring material for semiconductor device, wiring for semiconductor device including the same, and semiconductor device including the wiring

Номер патента: US20220068824A1. Автор: Joungeun YOO,Youngjae Kang,Duseop Yoon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-03-03.

Wiring material for semiconductor device, wiring for semiconductor device including the same, and semiconductor device including the wiring

Номер патента: US20240038664A1. Автор: Joungeun YOO,Youngjae Kang,Duseop Yoon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-02-01.

Wiring material for semiconductor device, wiring for semiconductor device including the same, and semiconductor device including the wiring

Номер патента: EP3961685A1. Автор: Joungeun YOO,Youngjae Kang,Duseop Yoon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-03-02.

Wiring material for semiconductor device, wiring for semiconductor device including the same, and semiconductor device including the wiring

Номер патента: US11830814B2. Автор: Joungeun YOO,Youngjae Kang,Duseop Yoon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-11-28.

GaN Single-Crystal Mass and Method of Its Manufacture, and Semiconductor Device and Method of Its Manufacture

Номер патента: US20100314625A1. Автор: Takashi Sakurada,Hideaki Nakahata,Yoshiyuki Yamamoto,Shinsuke Fujiwara,Seiji Nakahata,Tomoki Uemura. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2010-12-16.

Manufacturing method of semiconductor device, and semiconductor device

Номер патента: US20090278235A1. Автор: Yoshiro Hirose,Masayuki Asai,Kenji Kanayama,Kazuyuki Okuda,Norikazu Mizuno. Владелец: HITACHI KOKUSAI ELECTRIC INC. Дата публикации: 2009-11-12.

Electroless-plating solution and semiconductor device

Номер патента: WO2002099164A3. Автор: Hiroaki Inoue,Kenji Nakamura,Moriji Matsumoto. Владелец: Ebara Corp. Дата публикации: 2004-05-21.

Composition comprising polyimide or precursor thereof, cured product thereof, polyimide film comprising cured product, laminate provided with polyimide film, and device provided with laminate

Номер патента: US20230279184A1. Автор: Takashi Yamashita,Kyunghwan Kim,Takashi Kino,Chan Hyo Park,Jinyoung Park,Su Kyeong Kim,Seongku KIM. Владелец: LG Chem Ltd. Дата публикации: 2023-09-07.

Oxide semiconductor film and semiconductor device

Номер патента: US09893201B2. Автор: Shunpei Yamazaki,Masahiro Takahashi,Kengo Akimoto. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2018-02-13.

Silicon nitride film, and semiconductor device

Номер патента: US09847355B2. Автор: Shunpei Yamazaki,Kengo Akimoto,Toru Takayama. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2017-12-19.

Methods of forming a memory cell material, and related methods of forming a semiconductor device structure, memory cell materials, and semiconductor device structures

Номер патента: US09735359B2. Автор: Gurtej S. Sandhu,John A. Smythe. Владелец: Micron Technology Inc. Дата публикации: 2017-08-15.

Electroluminescent device and semiconductor nanoparticle

Номер патента: EP4141087A1. Автор: Sung Woo Kim,Eun Joo Jang,Hyo Sook JANG,Yuho WON. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-03-01.

Curable composition, and optical member including cured product thereof

Номер патента: EP3816203A1. Автор: Heon Kim,Yeongrae Chang,Hee Jung Choi. Владелец: LG Chem Ltd. Дата публикации: 2021-05-05.

Low-toxicity and high-efficiency orthoester mixture pharmaceutical adjuvant, preparation method thereof, and topical sustained release drug delivery formulation including same

Номер патента: US12059467B2. Автор: XIN Wang,Guoqing YAN,Rupei TANG. Владелец: ANHUI UNIVERSITY. Дата публикации: 2024-08-13.

Improved low-toxicity and high-efficiency orthoester mixture pharmaceutical adjuvant, preparation method thereof, and topical sustained release drug delivery formulation including same

Номер патента: US20240108728A1. Автор: XIN Wang,Guoqing YAN,Rupei TANG. Владелец: ANHUI UNIVERSITY. Дата публикации: 2024-04-04.

Copolymer, article including same, and display device including the article

Номер патента: US8883953B2. Автор: Sang Soo Lee,Jae Jun Lee,Byung Hee Sohn,Hyun Jeong JEON. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2014-11-11.

Copolymer, article including same, and display device including the article

Номер патента: US20130302586A1. Автор: Sang Soo Lee,Jae Jun Lee,Byung Hee Sohn,Hyun Jeong JEON. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2013-11-14.

Negative photosensitive resin composition, cured product, laminate, method for producing cured product, and semiconductor device

Номер патента: EP4317287A1. Автор: Kenta Yamazaki,Kyohei Sakita. Владелец: Fujifilm Corp. Дата публикации: 2024-02-07.

Cultivation medium for plant cultivation, cultivation mixture for pressure injection to plant roots, method of their production and use thereof

Номер патента: EP4342288A1. Автор: Miroslav Vosatka,Tereza Hnátková,Kateřina Hájková,Michael Pohořelý,Lukáš Trakal,Michal Hausenblas. Владелец: Groown SRO. Дата публикации: 2024-03-27.

Nitride semiconductor structure and semiconductor light emitting device including the same

Номер патента: US09780255B2. Автор: Yen-Lin LAI,Jyun-De Wu,Yu-Chu Li. Владелец: GENESIS PHOTONICS INC. Дата публикации: 2017-10-03.

Nitride semiconductor structure and semiconductor light emitting device including the same

Номер патента: US20150270433A1. Автор: Yen-Lin LAI,Shen-Jie Wang. Владелец: GENESIS PHOTONICS INC. Дата публикации: 2015-09-24.

Composition for hardmask, method of forming patterns using the same, and semiconductor integrated circuit device including the patterns

Номер патента: US9244351B2. Автор: Young-Min Kim,Yong-Woon YOON,Sung-Jae Lee,Joon-Young Moon,Youn-Jin Cho. Владелец: Cheil Industries Inc. Дата публикации: 2016-01-26.

Composition for hardmask, method of forming patterns using the same, and semiconductor integrated circuit device including the patterns

Номер патента: US20140335447A1. Автор: Young-Min Kim,Yong-Woon YOON,Sung-Jae Lee,Joon-Young Moon,Youn-Jin Cho. Владелец: Cheil Industries Inc. Дата публикации: 2014-11-13.

Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same

Номер патента: SG173362A1. Автор: Ardavan Niroomand,Shuang Meng,Baosuo Zhou,Mirzafer K Abatchev,Paul A Morgan,Joseph Greeley,Brian J Coppa. Владелец: Micron Technology Inc. Дата публикации: 2011-08-29.

Pitch Reduction Technology Using Alternating Spacer Depositions During the Formation of a Semiconductor Device and Systems Including Same

Номер патента: US20170372913A1. Автор: Ardavan Niroomand,Paul A. Morgan,Shuang Meng,Joseph Neil Greeley,Baosuo Zhou,Mirzafer K. Abatchev,Brian J. Coppa. Владелец: Micron Technology Inc. Дата публикации: 2017-12-28.

Pitch Reduction Technology Using Alternating Spacer Depositions During the Formation of a Semiconductor Device and Systems Including Same

Номер патента: US20200203171A1. Автор: Ardavan Niroomand,Paul A. Morgan,Shuang Meng,Joseph Neil Greeley,Baosuo Zhou,Mirzafer K. Abatchev,Brian J. Coppa. Владелец: Micron Technology Inc. Дата публикации: 2020-06-25.

Pitch Reduction Technology Using Alternating Spacer Depositions During the Formation of a Semiconductor Device and Systems Including Same

Номер патента: US20150021744A1. Автор: Ardavan Niroomand,Paul A. Morgan,Shuang Meng,Baosuo Zhou,Mirzafer K. Abatchev,Brian J. Coppa,Joseph Neil Greely. Владелец: Micron Technology Inc. Дата публикации: 2015-01-22.

Pitch Reduction Technology Using Alternating Spacer Depositions During the Formation of a Semiconductor Device and Systems Including Same

Номер патента: US20180286693A1. Автор: Ardavan Niroomand,Paul A. Morgan,Shuang Meng,Joseph Neil Greeley,Baosuo Zhou,Mirzafer K. Abatchev,Brian J. Coppa. Владелец: Micron Technology Inc. Дата публикации: 2018-10-04.

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Номер патента: US20240222131A1. Автор: Ardavan Niroomand,Paul A. Morgan,Shuang Meng,Joseph Neil Greeley,Baosuo Zhou,Mirzafer K. Abatchev,Brian J. Coppa. Владелец: Lodestar Licensing Group LLC. Дата публикации: 2024-07-04.

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Номер патента: US09761457B2. Автор: Ardavan Niroomand,Paul A. Morgan,Shuang Meng,Joseph Neil Greeley,Baosuo Zhou,Mirzafer K. Abatchev,Brian J. Coppa. Владелец: Micron Technology Inc. Дата публикации: 2017-09-12.

Phase changeable memory device and semiconductor integrated circuit device including the same

Номер патента: US20190181335A1. Автор: Chang Soo Woo,Dong Yean Oh. Владелец: SK hynix Inc. Дата публикации: 2019-06-13.

Land grid array semiconductor device packages, assemblies including same, and methods of fabrication

Номер патента: WO2007086937A2. Автор: Lee Choon Kuan,David J. Corisis,Chin Hui Chong. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2007-08-02.

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Номер патента: US11935756B2. Автор: Ardavan Niroomand,Paul A. Morgan,Shuang Meng,Joseph Neil Greeley,Baosuo Zhou,Mirzafer K. Abatchev,Brian J. Coppa. Владелец: Lodestar Licensing Group LLC. Дата публикации: 2024-03-19.

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Номер патента: WO2008008338A3. Автор: Ardavan Niroomand,Shuang Meng,Baosuo Zhou,Mirzafer K Abatchev,Paul A Morgan,Joseph Greeley,Brian J Coppa. Владелец: Brian J Coppa. Дата публикации: 2008-03-20.

Organic field effect transistor and semiconductor device

Номер патента: US20120032160A1. Автор: Shinobu Furukawa,Kaoru Kato,Ryota Imahayashi. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2012-02-09.

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Номер патента: US20130168642A1. Автор: Ming-Chou Chen,Chia-Ming Yeh,Liang-Hsiang Chen. Владелец: Industrial Technology Research Institute ITRI. Дата публикации: 2013-07-04.

Interface circuit and semiconductor output circuit device including the same

Номер патента: US20240014818A1. Автор: Seung Ho Lee. Владелец: SK hynix Inc. Дата публикации: 2024-01-11.

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Номер патента: US20230240006A1. Автор: Kyu Yeong Je,Su Min Lee. Владелец: HL Mando Corp. Дата публикации: 2023-07-27.

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Номер патента: US12040278B2. Автор: Kiwon Baek. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-16.

Non-volatile semiconductor memory element and method of manufacturing the same, and semiconductor integrated circuit device including the non-volatile semiconductor memory element

Номер патента: US20070114594A1. Автор: Mizuki Ono. Владелец: Toshiba Corp. Дата публикации: 2007-05-24.

Semiconductor light emitting element and semiconductor light emitting device including the same

Номер патента: EP2325900B1. Автор: Yoshiki Inoue,Katsuyoshi Kadan. Владелец: Nichia Corp. Дата публикации: 2016-10-26.

Resist underlayer composition, method of forming patterns, and semiconductor integrated circuit device including the pattern

Номер патента: US20160041470A1. Автор: Hwan-Sung Cheon,Jun-Ho Lee,Hyo-Young KWON,Min-Gyum KIM. Владелец: Cheil Industries Inc. Дата публикации: 2016-02-11.

Display device, driving method thereof, and electronic paper

Номер патента: US20240274056A1. Автор: Yizhen Lin,Qiangcan Huang. Владелец: Huawei Technologies Co Ltd. Дата публикации: 2024-08-15.

Tape stiffener and semiconductor device component assemblies including same

Номер патента: US20040212062A1. Автор: Ford Grigg. Владелец: Individual. Дата публикации: 2004-10-28.

Synapse element with learning function and semiconductor integrated circuit device including the synapse element

Номер патента: TW200300901A. Автор: Yutaka Arima. Владелец: Expl Of Next Generation Co Ltd. Дата публикации: 2003-06-16.

Semiconductor device including semiconductor element mounted on another semiconductor element

Номер патента: US20050167834A1. Автор: Shigeru Yamada,Yasushi Shiraishi,Shinji Ohuchi. Владелец: Shinji Ohuchi. Дата публикации: 2005-08-04.

Stack package and semiconductor integrated circuit device including a variable voltage

Номер патента: US20160254213A1. Автор: Kyung Whan Kim. Владелец: SK hynix Inc. Дата публикации: 2016-09-01.

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Номер патента: US20160035934A1. Автор: Lai Yen-Lin,Li Yu-Chu,Wu Jyun-De. Владелец: . Дата публикации: 2016-02-04.

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Номер патента: US20180047869A1. Автор: Lai Yen-Lin,Li Yu-Chu,Wu Jyun-De. Владелец: GENESIS PHOTONICS INC.. Дата публикации: 2018-02-15.

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Номер патента: US20140138616A1. Автор: Huang Chi-Feng,Wang Shen-Jie,Li Yu-Chu,Wu Jyun-De,Lin Ching-Liang,LEE CHUN-CHIEH. Владелец: GENESIS PHOTONICS INC.. Дата публикации: 2014-05-22.

NITRIDE SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING THE SAME

Номер патента: US20140138617A1. Автор: Lai Yen-Lin,Wang Shen-Jie. Владелец: GENESIS PHOTOMICS INC.. Дата публикации: 2014-05-22.

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Номер патента: US20140138618A1. Автор: Li Yu-Chu,Wu Jyun-De. Владелец: GENESIS PHOTONICS INC.. Дата публикации: 2014-05-22.

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Номер патента: US20140138619A1. Автор: Lai Yen-Lin,Li Yu-Chu,Wu Jyun-De. Владелец: GENESIS PHOTONICS INC.. Дата публикации: 2014-05-22.

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Номер патента: US20150270433A1. Автор: Lai Yen-Lin,Wang Shen-Jie. Владелец: . Дата публикации: 2015-09-24.

Hardmask composition, method of forming patterns using the hardmask composition and semiconductor integrated circuit device including the patterns including the patterns

Номер патента: KR101680274B1. Автор: 김고은,김영민,최유정,신승욱,박유신,홍승희,김혜정,송현지,김윤준,문준영,박유정,윤용운,이충헌,박요철. Владелец: 제일모직 주식회사. Дата публикации: 2016-11-29.

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Номер патента: USRE47088E1. Автор: Yen-Lin LAI,Jyun-De Wu,Yu-Chu Li. Владелец: GENESIS PHOTONICS INC. Дата публикации: 2018-10-16.

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Номер патента: US10381511B2. Автор: Yen-Lin LAI,Jyun-De Wu,Yu-Chu Li. Владелец: GENESIS PHOTONICS INC. Дата публикации: 2019-08-13.

Hardmask composition, method of forming patterns using the hardmask composition and semiconductor integrated circuit device including the patterns including the patterns

Номер патента: KR20150003034A. Автор: 김고은,김영민,최유정,신승욱,박유신,홍승희,김혜정,송현지,김윤준,문준영,박유정,윤용운,이충헌,박요철. Владелец: 제일모직주식회사. Дата публикации: 2015-01-08.

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Номер патента: KR20150001445A. Автор: 김고은,김영민,최유정,신승욱,박유신,홍승희,김혜정,송현지,김윤준,문준영,박유정,윤용운,이충헌,박요철. Владелец: 제일모직주식회사. Дата публикации: 2015-01-06.

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Номер патента: KR101684977B1. Автор: 김고은,김영민,최유정,신승욱,박유신,홍승희,김혜정,송현지,김윤준,문준영,박유정,윤용운,이충헌,박요철. Владелец: 제일모직 주식회사. Дата публикации: 2016-12-09.

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Номер патента: US20140070251A1. Автор: Jen Yi-Jun. Владелец: NATIONAL TAIPEI UNIVERSITY OF TECHNOLOGY. Дата публикации: 2014-03-13.

HARDMASK COMPOSITION AND METHOD OF FORMING PATTERNS AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE INCLUDING THE PATTERNS

Номер патента: US20140183701A1. Автор: LEE Bum-Jin,Choi Yoo-Jeong,KIM Yun-Jun,MOON Joon-Young,LEE Chung-Heon,Cho Youn-Jin. Владелец: . Дата публикации: 2014-07-03.

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Номер патента: US20190181335A1. Автор: OH Dong Yean,WOO Chang Soo. Владелец: . Дата публикации: 2019-06-13.

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Номер патента: US20140319659A1. Автор: Hwan-Sung Cheon,Jun-Ho Lee,Hyo-Young KWON,Min-Gyum KIM. Владелец: Cheil Industries Inc. Дата публикации: 2014-10-30.

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Номер патента: US20160254213A1. Автор: KIM Kyung Whan. Владелец: . Дата публикации: 2016-09-01.

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Номер патента: KR101655394B1. Автор: 이준호,전환승,김민겸,권효영. Владелец: 제일모직 주식회사. Дата публикации: 2016-09-07.

Hardmask composition and method of forming patterns and semiconductor integrated circuit device including the patterns

Номер патента: KR101344788B1. Автор: 김민수,전환승,최유정,송지윤,조성욱,오승배. Владелец: 제일모직주식회사. Дата публикации: 2013-12-26.

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Номер патента: KR101423171B1. Автор: 김영민,김민수,전환승,이철호,송지윤,이충헌. Владелец: 제일모직 주식회사. Дата публикации: 2014-07-25.

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Номер патента: KR101432605B1. Автор: 김민수,전환승,최유정,송지윤,오승배. Владелец: 제일모직주식회사. Дата публикации: 2014-08-21.

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Номер патента: US7612383B2. Автор: James Ibbetson,Eric Tarsa,Gerald H. Negley,Michael Leung,Peter Andrews,Thomas G. Coleman. Владелец: Cree Inc. Дата публикации: 2009-11-03.

Hardmask composition and method of forming patterns and semiconductor integrated circuit device including the patterns

Номер патента: KR101344793B1. Автор: 김민수,전환승,최유정,송지윤,오승배. Владелец: 제일모직주식회사. Дата публикации: 2013-12-26.

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Номер патента: TW201426199A. Автор: Yun-Jun KIM,Chung-Heon Lee,Bum-Jin LEE,Yoo-Jeong Choi,Joon-Young Moon,Youn-Jin Cho. Владелец: Cheil Ind Inc. Дата публикации: 2014-07-01.

Reflector packages and semiconductor light emitting devices including the same

Номер патента: US20080087910A1. Автор: James Ibbetson,Eric Tarsa,Gerald Negley,Thomas Coleman,Michael Leung,Peter Andrews. Владелец: Individual. Дата публикации: 2008-04-17.

Resist underlayer composition, method of forming patterns and semiconductor integrated circuit device including the patterns

Номер патента: US9195136B2. Автор: Hwan-Sung Cheon,Jun-Ho Lee,Hyo-Young KWON,Min-Gyum KIM. Владелец: Cheil Industries Inc. Дата публикации: 2015-11-24.

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Номер патента: CN103903962B. Автор: 赵娟振,金润俊,李忠宪,文俊怜,崔有廷,李范珍. Владелец: Cheil Industries Inc. Дата публикации: 2017-04-12.

Resist underlayer composition, method of forming patterns and semiconductor integrated circuit device including the patterns

Номер патента: KR101666483B1. Автор: 이성재,전환승,권효영. Владелец: 제일모직 주식회사. Дата публикации: 2016-10-14.

Hardmask composition and method of forming patterns and semiconductor integrated circuit device including the patterns

Номер патента: KR101556278B1. Автор: 이성재,조연진,전환승,이철호,문준영,박유정. Владелец: 제일모직 주식회사. Дата публикации: 2015-09-30.

NON-VOLATILE MEMORY ELEMENT, METHOD FOR THE PRODUCTION THEREOF, AND NON-VOLATILE SEMICONDUCTOR DEVICE WITH THE NON-VOLATILE MEMORY ELEMENT

Номер патента: DE602008006652D1. Автор: Satoru Fujii,Takeshi Takagi,Shunsaku Muraoka,Koichi Osano,Kazuhiko Shimakawa,Yoshihiko Kanzawa,Koji Katayama,Satoru Mitani,Ryoko Miyanaga. Владелец: Panasonic Corp. Дата публикации: 2011-06-16.

Tape stiffener, semiconductor device component assemblies including same, and stereolithographic methods for fabricating same

Номер патента: US20030176021A1. Автор: Ford Grigg. Владелец: Grigg Ford B.. Дата публикации: 2003-09-18.

Method to simultaneously form both fully silicided and partially silicided dual work function transistor gates during the manufacture of a semiconductor device, semiconductor devices, and systems including same

Номер патента: US20060205133A1. Автор: Suraj Mathew,Jigish Trivedi. Владелец: Micron Technology Inc. Дата публикации: 2006-09-14.

Enhanced access devices using selective epitaxial silicon over the channel region during the formation of a semiconductor device and systems including same

Номер патента: US20060255412A1. Автор: Nirmal Ramaswamy,Eric Blomiley. Владелец: Individual. Дата публикации: 2006-11-16.

Pitch Reduction Technology Using Alternating Spacer Depositions During the Formation of a Semiconductor Device and Systems Including Same

Номер патента: US20150021744A1. Автор: Morgan Paul A.,Meng Shuang,Zhou Baosuo,Abatchev Mirzafer K.,Niroomand Ardavan,Greely Joseph Neil,Coppa Brian J.. Владелец: . Дата публикации: 2015-01-22.

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Номер патента: US20160203993A1. Автор: Morgan Paul A.,Meng Shuang,Zhou Baosuo,Abatchev Mirzafer K.,Greeley Joseph Neil,Niroomand Ardavan,Coppa Brian J.. Владелец: . Дата публикации: 2016-07-14.

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Номер патента: US20200203171A1. Автор: Morgan Paul A.,Meng Shuang,Zhou Baosuo,Abatchev Mirzafer K.,Greeley Joseph Neil,Niroomand Ardavan,Coppa Brian J.. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2020-06-25.

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Номер патента: US20180286693A1. Автор: Morgan Paul A.,Meng Shuang,Zhou Baosuo,Abatchev Mirzafer K.,Greeley Joseph Neil,Niroomand Ardavan,Coppa Brian J.. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2018-10-04.

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Номер патента: US20170372913A1. Автор: Morgan Paul A.,Meng Shuang,Zhou Baosuo,Abatchev Mirzafer K.,Greeley Joseph Neil,Niroomand Ardavan,Coppa Brian J.. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2017-12-28.

Plastic lead frames for semiconductor devices and packages including same

Номер патента: US7005731B2. Автор: Tongbi Jiang,Jerrold L. King. Владелец: Micron Technology Inc. Дата публикации: 2006-02-28.

Process for forming a low carbon, low resistance metal film during the manufacture of a semiconductor device and systems including same

Номер патента: US20060261441A1. Автор: Eugene Marsh,Brenda Kraus. Владелец: Micron Technology Inc. Дата публикации: 2006-11-23.

Land grid array semiconductor device packages, assemblies including same, and methods of fabrication

Номер патента: TW200739835A. Автор: Chin Hui Chong,Choon Kuan Lee,David J Corisis. Владелец: Micron Technology Inc. Дата публикации: 2007-10-16.

Semiconductor device, manufacturing method thereof and aggregate type semiconductor device

Номер патента: EP0798780A3. Автор: Shinji OKI Electric Industry Co. Ltd. Ohuchi,Yasushi OKI Electric Industry Co. Ltd. Shiraishi,Hiroshi OKI Electric Industry Co. Ltd. Kawano,Etsuo OKI Electric Industry Co. Ltd. Yamada. Владелец: Oki Electric Industry Co Ltd. Дата публикации: 2000-09-13.

TERMINAL LAND FRAME AND MANUFACTURING METHOD THEREOF, AND RESIN-ENCLOSED SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

Номер патента: JP3916352B2. Автор: 幸雄 山口. Владелец: Panasonic Corp. Дата публикации: 2007-05-16.

Frame for semiconductor device and manufacture thereof, and manufacture of semiconductor device using frame therefor

Номер патента: JPH11297921A. Автор: 章能 澤井,Akiyoshi Sawai. Владелец: Mitsubishi Electric Corp. Дата публикации: 1999-10-29.

GaN Single Crystal Substrate and Method of Manufacturing Thereof and GaN-based Semiconductor Device and Method of Manufacturing Thereof

Номер патента: US20140061668A1. Автор: Fujiwara Shinsuke,Uematsu Koji,NAKAHATA Seiji,Osada Hideki. Владелец: Sumitomo Electric Industries, Ltd.. Дата публикации: 2014-03-06.

GaN thin film bonded substrate and manufacturing method thereof, and GaN-based semiconductor device and manufacturing method thereof

Номер патента: JP5003033B2. Автор: 昭広 八郷,勝史 秋田,仁 笠井,祥紀 三浦. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2012-08-15.

Solid-state image-pickup element, manufacture thereof, and manufacture of semiconductor device

Номер патента: JPH11111957A. Автор: Takeshi Matsuda,Masaru Sugimoto,大 杉本,健 松田. Владелец: Sony Corp. Дата публикации: 1999-04-23.

DIELECTRIC MATERIAL, METHOD OF MANUFACTURING THEREOF, AND DIELECTRIC DEVICES AND ELECTRONIC DEVICES INCLUDING THE SAME

Номер патента: US20180261388A1. Автор: KWAK Chan,Lee Woojin,YANG Daejin,ROH Jong Wook,Kim Hyungjun,JUNG Doh Won. Владелец: . Дата публикации: 2018-09-13.

POSITIVE ELECTRODE ACTIVE MATERIAL, MANUFACTURING METHOD THEREOF, AND LITHIUM SECONDARY BATTERY INCLUDING POSITIVE ELECTRODE INCLUDING SAME

Номер патента: US20220407064A1. Автор: Kim Ji Young,Seo Min Ho. Владелец: . Дата публикации: 2022-12-22.

Oxopicolinamide derivative, a method for production thereof and pharmaceutical use thereof

Номер патента: RU2742771C2. Автор: Фанлун ЯН,Вэйкан ТАО,Фэн Хэ,Ган ЧЭНЬ,Вэйминь ВАН,Сяодун ЛИ. Владелец: Цзянсу Хэнжуй Медицин Ко., Лтд.. Дата публикации: 2021-02-10.

Semiconductor device, fabricating method thereof and semiconductor package including the semiconductor device

Номер патента: US09941196B2. Автор: Ho-geon Song,Se-young Jeong,Ho-Jin Lee,Dong-Hyeon Jang,Tae-Je Cho,Un-Byoung Kang,Min-Seung Yoon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-04-10.

Semiconductor device and semiconductor package including same

Номер патента: US20240213200A1. Автор: Reona Takeoka. Владелец: ROHM CO LTD. Дата публикации: 2024-06-27.

Epitaxial structure of semiconductor device and preparing method thereof, and semiconductor device

Номер патента: US20240332371A1. Автор: HUI Zhang,Susu KONG. Владелец: Dynax Semiconductor Inc. Дата публикации: 2024-10-03.

Image sensor devices, methods of manufacture thereof, and semiconductor device manufacturing methods

Номер патента: US09748304B2. Автор: Szu-Ying Chen,Dun-Nian Yaung,Jen-Cheng Liu,Jeng-Shyan Lin,Shu-Ting Tsai,U-Ting CHEN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-08-29.

Semiconductor devices, methods of manufacture thereof, and semiconductor device packages

Номер патента: US09773724B2. Автор: Szu Wei Lu,Jing-Cheng Lin,Po-Hao Tsai,Ying-Ching Shih,I-Ting Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-09-26.

Polysilicon fuse, manufacturing method thereof, and semiconductor device including polysilicon fuse

Номер патента: US20140339675A1. Автор: Hideaki KATAKURA. Владелец: Fuji Electric Co Ltd. Дата публикации: 2014-11-20.

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Номер патента: US20140131791A1. Автор: Fujio Masuoka,Hiroki Nakamura. Владелец: Unisantis Electronics Singapore Pte Ltd. Дата публикации: 2014-05-15.

Semiconductor devices and semiconductor packages including the same

Номер патента: US12040294B2. Автор: ATSUSHI Fujisaki,JONGHO LEE,Jin Ho An,Un-Byoung Kang,Ju-Il Choi,Jeonggi Jin. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-16.

Semiconductor device and semiconductor circuit including the semiconductor device with enhanced current-voltage characteristics

Номер патента: US09825026B2. Автор: John Twynam. Владелец: LG Innotek Co Ltd. Дата публикации: 2017-11-21.

Semiconductor device measurement method using x-ray scattering and semiconductor device manufacturing method including the measurement method

Номер патента: US20230380783A1. Автор: Hidong Kwak,Jaeyong Lee,Minjung Shin,Chuhee LEE,Seungryeol Oh,Byunghyun HWANG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-11-30.

Oxide semiconductor film, transistor, and semiconductor device

Номер патента: US20150249123A1. Автор: Shunpei Yamazaki,Masahiro Takahashi. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2015-09-03.

Memory device and semiconductor device including the memory device

Номер патента: US12063770B2. Автор: Shunpei Yamazaki,Kiyoshi Kato,Tatsuya Onuki. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2024-08-13.

Semiconductor device and semiconductor device fabrication method

Номер патента: US20080042281A1. Автор: Kazuhide Abe. Владелец: Oki Electric Industry Co Ltd. Дата публикации: 2008-02-21.

Method of manufacturing semiconductor apparatus and semiconductor apparatus

Номер патента: US20220344219A1. Автор: Tatsuro SAWADA. Владелец: Kyocera Corp. Дата публикации: 2022-10-27.

Semiconductor device and semiconductor device manufacturing method

Номер патента: US20170229448A1. Автор: Hiroyuki Tanaka. Владелец: Fuji Electric Co Ltd. Дата публикации: 2017-08-10.

Semiconductor device and semiconductor storage device

Номер патента: US20240322045A1. Автор: Takahiro Fujii,Kotaro Noda,Takanori Akita,Kasumi Okabe. Владелец: Kioxia Corp. Дата публикации: 2024-09-26.

Method of forming a semiconductor device structure and semiconductor device structure

Номер патента: US09842845B1. Автор: Ralf Richter,Thomas Melde. Владелец: Globalfoundries Inc. Дата публикации: 2017-12-12.

Logic circuit and semiconductor device formed using unipolar transistor

Номер патента: US11777502B2. Автор: Takeshi Aoki,Hiroki Inoue,Sho Nagao,Munehiro KOZUMA,Shuji Fukai,Fumika AKASAWA. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2023-10-03.

Semiconductor devices, semiconductor device packages, electronic systems including same, and related methods

Номер патента: US20210183843A1. Автор: Xiaopeng Qu,Shams U. Arifeen. Владелец: Micron Technology Inc. Дата публикации: 2021-06-17.

Method and installation for producing a semiconductor device, and semiconductor device

Номер патента: US8946059B2. Автор: Marcus Bender,Evelyn Scheer,Fabio Pieralisi. Владелец: Applied Materials Inc. Дата публикации: 2015-02-03.

Method for forming semiconductor device and semiconductor device

Номер патента: US20230015279A1. Автор: Deyuan Xiao,GuangSu SHAO,Weiping BAI. Владелец: Beijing Superstring Academy of Memory Technology. Дата публикации: 2023-01-19.

Radiation-hardened semiconductor structure, a semiconductor device including the radiation-hardened semicoductor structure, and methods of forming the radiation-hardened semiconductor structure and semiconductor device

Номер патента: US20120025311A1. Автор: John S. Canham. Владелец: Alliant Techsystems Inc. Дата публикации: 2012-02-02.

Method for manufacturing semiconductor device, and semiconductor device

Номер патента: US20170309547A1. Автор: Akito Shimizu,Sadayuki Moroi,Kenji Nishikawa,Tomoo Imura. Владелец: Renesas Electronics Corp. Дата публикации: 2017-10-26.

Semiconductor storage device and semiconductor device

Номер патента: US20240321829A1. Автор: Nobuyuki Momo. Владелец: Kioxia Corp. Дата публикации: 2024-09-26.

Semiconductor device, method of manufacturing semiconductor device, and semiconductor package including semiconductor device

Номер патента: US20240321774A1. Автор: Seonkyu Kim,Kitae Park,Seungmin Baek,Joonseok OH,Jaewook JUNG,Yongjae SONG,Chiwan SONG,Hyunna BAE,Seokil Hong. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-09-26.

Semiconductor device, semiconductor structure and method for fabricating semiconductor device and semiconductor structure using tilted etch process

Номер патента: US12094718B2. Автор: Huan-Yung Yeh. Владелец: Nanya Technology Corp. Дата публикации: 2024-09-17.

Method for manufacturing semiconductor device, cleaning device, cleaning method, and semiconductor device

Номер патента: US20240321818A1. Автор: Tomoaki Shibata,Shizu FUKUZUMI,Toshiaki Shirasaka. Владелец: Resonac Corp. Дата публикации: 2024-09-26.

Semiconductor device and manufacturing method thereof

Номер патента: US12100698B2. Автор: Chen-Hua Yu,Chih-Chieh Chang,Chuei-Tang Wang,Chung-Hao Tsai. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-24.

Semiconductor device and semiconductor device manufacturing method

Номер патента: US09972715B2. Автор: Katsunori Ueno. Владелец: Fuji Electric Co Ltd. Дата публикации: 2018-05-15.

Semiconductor package, interposer and semiconductor process for manufacturing the same

Номер патента: US09947635B1. Автор: Wen-Long Lu,Chi-Chang Lee,Yuan-Feng CHIANG,Chung-Hsi Wu. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2018-04-17.

Method of forming nanostructure, method of manufacturing semiconductor device using the same, and semiconductor device including nanostructure

Номер патента: US09899473B2. Автор: Hyeokshin Kwon,Hwansoo Suh,Insu Jeon,Youngtek OH. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-02-20.

Oxide semiconductor film and semiconductor device

Номер патента: US09853167B2. Автор: Shunpei Yamazaki,Kengo Akimoto,Ryosuke Watanabe,Takuya Hirohashi,Akiharu Miyanaga,Hideyuki Kishida,Masayuki Sakakura,Junichiro Sakata. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2017-12-26.

Semiconductor device having semiconductor device elements in a semiconductor layer

Номер патента: US12107130B2. Автор: Hans-Joachim Schulze,Gerhard Schmidt,Ingo Muri,Oliver Hellmund,Thomas Neidhart,Iris Moder,Jacob Tillmann Ludwig,Johannes Konrad Baumgartl. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2024-10-01.

Semiconductor device and semiconductor device manufacturing method

Номер патента: US09741587B2. Автор: Yoshikazu Takahashi,Tsunehiro Nakajima,Norihiro NASHIDA. Владелец: Fuji Electric Co Ltd. Дата публикации: 2017-08-22.

Interconnection structure, fabricating method thereof, and semiconductor device using the same

Номер патента: US09721896B2. Автор: Chi-Wen Liu,Yu-Hung Lin,Horng-Huei Tseng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-08-01.

Semiconductor device and semiconductor module

Номер патента: US20160247736A1. Автор: Yoshimitsu KUWAHARA. Владелец: Toshiba Corp. Дата публикации: 2016-08-25.

Semiconductor device and semiconductor module

Номер патента: EP3993061A1. Автор: Takahiro Kato,Tatsunori Sakano,Ryohei GEJO. Владелец: Toshiba Electronic Devices and Storage Corp. Дата публикации: 2022-05-04.

Semiconductor device and semiconductor module

Номер патента: US20220140120A1. Автор: Takahiro Kato,Tatsunori Sakano,Ryohei GEJO. Владелец: Toshiba Electronic Devices and Storage Corp. Дата публикации: 2022-05-05.

Semiconductor device and semiconductor device manufacturing method

Номер патента: US20210280543A1. Автор: Taiichi Ogumi. Владелец: Lapis Semiconductor Co Ltd. Дата публикации: 2021-09-09.

Manufacturing method of semiconductor device and semiconductor device

Номер патента: US20240162284A1. Автор: Takashi Yoshimura,Hiroshi TAKISHITA,Yuusuke OOSHIMA,Shuntaro Yaguchi. Владелец: Fuji Electric Co Ltd. Дата публикации: 2024-05-16.

Method for producing semiconductor device and semiconductor device

Номер патента: US20150303296A1. Автор: Fujio Masuoka,Hiroki Nakamura. Владелец: Unisantis Electronics Singapore Pte Ltd. Дата публикации: 2015-10-22.

Semiconductor device and semiconductor device assembly

Номер патента: US20020084470A1. Автор: Tadahiko Sakai,Yoshiyuki Wada,Shoji Sakemi,Mitsuru Ozono. Владелец: Individual. Дата публикации: 2002-07-04.

Semiconductor device and semiconductor device manufacturing method

Номер патента: US12074215B2. Автор: Tomomi Yamanobe,Yoshinobu Takeshita,Kazutaka Kodama,Minako Oritu. Владелец: Lapis Semiconductor Co Ltd. Дата публикации: 2024-08-27.

Semiconductor device and semiconductor device manufacturing method

Номер патента: US20230197470A1. Автор: Takashi Katsuki. Владелец: Fuji Electric Co Ltd. Дата публикации: 2023-06-22.

Semiconductor device and semiconductor package including the same

Номер патента: US20230282582A1. Автор: Ju-Il Choi,Dongjoon Oh,Chungsun Lee,Hyunsu Hwang,Gyuho KANG,Seong-Hoon BAE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-09-07.

Manufacturing method of semiconductor device and semiconductor device

Номер патента: US9076777B2. Автор: Yoshiharu Kaneda,Naoko Taniguchi. Владелец: Renesas Electronics Corp. Дата публикации: 2015-07-07.

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Номер патента: US20220181490A1. Автор: Chih-Hao Wang,Kuo-Cheng Chiang,Lo-Heng Chang,Zhi-Chang Lin,Jung-Hung CHANG,Shih-Cheng Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-06-09.

Semiconductor device and semiconductor memory device

Номер патента: US20230402548A1. Автор: Kazuhiro Matsuo,Kenichiro TORATANI,Ha Hoang. Владелец: Kioxia Corp. Дата публикации: 2023-12-14.

Method of fabricating semiconductor device including two-dimensional material layer defining air-gap, and semiconductor device

Номер патента: US20230163023A1. Автор: Soyoung LEE,Keunwook SHIN,Sungjoo An,Jungsoo YOON. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-05-25.

Heat dissipation structure and semiconductor package including the same

Номер патента: US20240321681A1. Автор: Sunggu Kang,Hwanjoo PARK,Jaechoon Kim,Sungho Mun. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-09-26.

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Номер патента: US12100760B2. Автор: Isao Takahashi,Masahiro Sugimoto,Takashi Shinohe. Владелец: Flosfia Inc. Дата публикации: 2024-09-24.

Method of manufacturing a semiconductor device and semiconductor device

Номер патента: US20240372319A1. Автор: Tansen Varghese,Hubert Halbritter,Laura KREINER. Владелец: Ams Osram International GmbH. Дата публикации: 2024-11-07.

Methods of forming a semiconductor device including active patterns on a bonding layer and semiconductor devices formed by the same

Номер патента: US12112952B2. Автор: Sungmin Kim,Daewon HA. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-10-08.

Semiconductor device and semiconductor device manufacturing method

Номер патента: US09985073B2. Автор: Hiroki Kasai. Владелец: Lapis Semiconductor Co Ltd. Дата публикации: 2018-05-29.

Sequential circuit and semiconductor device

Номер патента: US09939692B2. Автор: Shunpei Yamazaki,Hiroyuki Miyake,Shinpei Matsuda,Masahiko Hayakawa,Daisuke Matsubayashi,Kouhei Toyotaka. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2018-04-10.

Semiconductor device and semiconductor manufacturing process

Номер патента: US09911709B1. Автор: Chun-Jun ZHUANG,Wei-Hang Tai,Pin-Ha Chuang. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2018-03-06.

Semiconductor device fabrication method and semiconductor device

Номер патента: US09853122B2. Автор: Masataka Yoshinari. Владелец: Lapis Semiconductor Co Ltd. Дата публикации: 2017-12-26.

Method of manufacturing semiconductor device and semiconductor device

Номер патента: US09837326B2. Автор: Akira Yajima. Владелец: Renesas Electronics Corp. Дата публикации: 2017-12-05.

Method of manufacturing semiconductor device, semiconductor substrate, and semiconductor device

Номер патента: US09831126B2. Автор: Mitsuhiko Sakai. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2017-11-28.

Method for producing semiconductor device and semiconductor device

Номер патента: US09780179B2. Автор: Fujio Masuoka,Hiroki Nakamura. Владелец: Unisantis Electronics Singapore Pte Ltd. Дата публикации: 2017-10-03.

Semiconductor compound structure and method of fabricating the same using graphene or carbon nanotubes, and semiconductor device including the semiconductor compound structure

Номер патента: US09748094B2. Автор: Sang-jin Lee,Jun-hee Choi,Un-Jeong Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-08-29.

Method of fabricating semiconductor device using gang bonding and semiconductor device fabricated by the same

Номер патента: US09711693B2. Автор: Chung Hoon Lee,Dae Sung Kal,Ki Bum Nam. Владелец: Individual. Дата публикации: 2017-07-18.

Semiconductor device and semiconductor device manufacturing method

Номер патента: US09704912B2. Автор: Hiroki Kasai. Владелец: Lapis Semiconductor Co Ltd. Дата публикации: 2017-07-11.

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Номер патента: US09679874B2. Автор: Jae Choon Kim,Kyol PARK,Chajea JO,Jin-kwon Bae,Jichul Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-06-13.

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Номер патента: US20240030324A1. Автор: Atsushi Shoji,Soichi Yoshida. Владелец: Fuji Electric Co Ltd. Дата публикации: 2024-01-25.

Cell structure of semiconductor device, preparation method thereof and semiconductor device

Номер патента: US20240014301A1. Автор: Bo Shi,Ting Xiao,Yiren LIN. Владелец: Edgeless Semiconductor Co Ltd Of Zhuhai. Дата публикации: 2024-01-11.

Semiconductor device and semiconductor module

Номер патента: EP3817068A1. Автор: Soichi Yoshida,Atsushi SHOUJI. Владелец: Fuji Electric Co Ltd. Дата публикации: 2021-05-05.

Semiconductor device and semiconductor module

Номер патента: US10636885B2. Автор: Takeshi Imamura,Ryou Kato,Ryosuke Okawa,Kazuma Yoshida,Toshikazu Imai. Владелец: Panasonic Intellectual Property Management Co Ltd. Дата публикации: 2020-04-28.

Ladder annealing process for increasing polysilicon grain size in semiconductor device

Номер патента: US12052868B2. Автор: Lei Li,Tuo Li,Hao PU,Caiyu Wu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-07-30.

Manufacturing method of semiconductor device and semiconductor device corresponding to loop back test

Номер патента: US20070245179A1. Автор: Hiroshi Noda. Владелец: Renesas Technology Corp. Дата публикации: 2007-10-18.

Hemt device and semiconductor device

Номер патента: US20240234565A1. Автор: Jie Zhang,Qian Wang,Nien-Tze Yeh,Yutao Fang. Владелец: Hunan Sanan Semiconductor Co Ltd. Дата публикации: 2024-07-11.

Semiconductor device and semiconductor chip

Номер патента: US20180005888A1. Автор: Fujiyuki Minesaki. Владелец: Lapis Semiconductor Co Ltd. Дата публикации: 2018-01-04.

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Номер патента: US20220158000A1. Автор: Yasushi Higuchi,Osamu Imafuji,Yusuke Matsubara,Takashi Shinohe,Mitsuru Okigawa. Владелец: Flosfia Inc. Дата публикации: 2022-05-19.

Semiconductor device and semiconductor memory device

Номер патента: US20160276351A1. Автор: Daisuke Matsushita,Chika Tanaka. Владелец: Toshiba Corp. Дата публикации: 2016-09-22.

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Номер патента: US20240282681A1. Автор: Hidetoshi Abe,Masashi Hayashiguchi. Владелец: ROHM CO LTD. Дата публикации: 2024-08-22.

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Номер патента: US20220149114A1. Автор: Bonwon KOO,Kiyeon YANG,Changseung LEE,Yongyoung PARK,Dongho Ahn,Chungman Kim,Segab Kwon,Seunggeun Yu. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-05-12.

Semiconductor device and semiconductor module

Номер патента: US20240282805A1. Автор: Bungo Tanaka. Владелец: ROHM CO LTD. Дата публикации: 2024-08-22.

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Номер патента: US12063793B2. Автор: Bonwon KOO,Kiyeon YANG,Changseung LEE,Yongyoung PARK,Dongho Ahn,Chungman Kim,Segab Kwon,Seunggeun Yu. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-08-13.

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Номер патента: US12068404B2. Автор: Atsushi Shoji,Soichi Yoshida. Владелец: Fuji Electric Co Ltd. Дата публикации: 2024-08-20.

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Номер патента: US20220246632A1. Автор: Takeshi Shimane. Владелец: Kioxia Corp. Дата публикации: 2022-08-04.

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Номер патента: US20200381557A1. Автор: Shigeki Hattori,Tomomasa Ueda,Keiji Ikeda. Владелец: Kioxia Corp. Дата публикации: 2020-12-03.

Methods for forming a semiconductor device and semiconductor devices

Номер патента: US20180061644A1. Автор: Anton Mauder,Hans-Joachim Schulze,Johannes Georg Laven,Werner Schustereder. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2018-03-01.

Lead frames including inner-digitized bond fingers on bus bars and semiconductor device package including same

Номер патента: US20020109212A1. Автор: David Corisis. Владелец: Individual. Дата публикации: 2002-08-15.

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Номер патента: US20240258434A1. Автор: Shunpei Yamazaki,Masayuki Sakakura. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2024-08-01.

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Номер патента: US20240313094A1. Автор: Ayanori Gatto. Владелец: Mitsubishi Electric Corp. Дата публикации: 2024-09-19.

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Номер патента: US12132092B2. Автор: Chih-Hao Wang,Cheng-Chi Chuang,Huan-Chieh Su,Li-Zhen YU,Lin-Yu HUANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-29.

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Номер патента: US12117480B2. Автор: Shinsuke Suzuki,Masataka IKESU. Владелец: Hamamatsu Photonics KK. Дата публикации: 2024-10-15.

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Номер патента: US09947801B2. Автор: Shunpei Yamazaki,Masayuki Sakakura. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2018-04-17.

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Номер патента: US09892996B2. Автор: Akihiro Kimura. Владелец: ROHM CO LTD. Дата публикации: 2018-02-13.

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Номер патента: US09818645B2. Автор: Wei Feng,Katsuya Kikuchi,Naoya Watanabe,Masahiro Aoyagi,Tung Thanh BUI. Владелец: National Institute of Advanced Industrial Science and Technology AIST. Дата публикации: 2017-11-14.

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Номер патента: US09741675B2. Автор: Dao-Long Chen,Chang-Chi Lee,Chien-Fan Chen,Ping-Feng Yang. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2017-08-22.

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Номер патента: US12014972B2. Автор: ATSUSHI Fujisaki,Kwang-jin Moon,Byung-lyul Park,Ju-Il Choi,Jin-ho An. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-06-18.

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Номер патента: US20140151873A1. Автор: Takayuki Tanaka,Kana Iwami. Владелец: Sony Corp. Дата публикации: 2014-06-05.

Method for producing semiconductor device and semiconductor device

Номер патента: US20160322261A1. Автор: Fujio Masuoka,Hiroki Nakamura. Владелец: Unisantis Electronics Singapore Pte Ltd. Дата публикации: 2016-11-03.

Method for producing semiconductor device and semiconductor device

Номер патента: US20150303195A1. Автор: Fujio Masuoka,Hiroki Nakamura. Владелец: Unisantis Electronics Singapore Pte Ltd. Дата публикации: 2015-10-22.

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Номер патента: EP4254512A1. Автор: Yongjin Lee,Yongseok Kim,Wonsok Lee,Min Hee Cho,Min Tae RYU,Sungwon Yoo,Huije Ryu. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-10-04.

Semiconductor device and semiconductor memory cell including the same

Номер патента: US20230307551A1. Автор: Yongjin Lee,Yongseok Kim,Wonsok Lee,Min Hee Cho,Min Tae RYU,Sungwon Yoo,Huije Ryu. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-09-28.

Method of manufacturing a semiconductor device and semiconductor device

Номер патента: US20140091319A1. Автор: Atsushi Yamada,Kenji Nukui. Владелец: Fujitsu Ltd. Дата публикации: 2014-04-03.

Display device and semiconductor device

Номер патента: US9006828B2. Автор: Hajime Yamaguchi,Tomomasa Ueda,Kentaro Miura,Shintaro Nakano,Tatsunori Sakano,Nobuyoshi Saito,Yuya MAEDA. Владелец: Toshiba Corp. Дата публикации: 2015-04-14.

Semiconductor device including through electrode and semiconductor package including the same

Номер патента: US20220367321A1. Автор: Kwangjin Moon,Hyungjun Jeon,Myungjoo PARK,Hakseung LEE,Sonkwan HWANG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-11-17.

Semiconductor device and semiconductor package

Номер патента: US11923328B2. Автор: Hsin He HUANG. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2024-03-05.

Semiconductor device manufacturing method and semiconductor device

Номер патента: US20070120185A1. Автор: Toshiaki Komukai,Hideaki Harakawa. Владелец: Individual. Дата публикации: 2007-05-31.

Semiconductor device and semiconductor device mounting structure

Номер патента: US20150155253A1. Автор: Yasufumi Matsuoka. Владелец: ROHM CO LTD. Дата публикации: 2015-06-04.

Semiconductor device and semiconductor device mounting structure

Номер патента: US9711481B2. Автор: Yasufumi Matsuoka. Владелец: ROHM CO LTD. Дата публикации: 2017-07-18.

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Номер патента: US8963304B2. Автор: Yasufumi Matsuoka. Владелец: ROHM CO LTD. Дата публикации: 2015-02-24.

Semiconductor device and semiconductor device manufacturing method

Номер патента: US8987903B2. Автор: Takayuki Tanaka,Kana Iwami. Владелец: Sony Corp. Дата публикации: 2015-03-24.

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Номер патента: US20210343700A1. Автор: Jhon Jhy Liaw. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-11-04.

Semiconductor device and semiconductor package

Номер патента: US20240250053A1. Автор: Hsin He HUANG. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2024-07-25.

Method for producing semiconductor device, wiring board, and semiconductor device

Номер патента: US20240088051A1. Автор: Hiroaki Fujita,Kazuhiko Kurafuchi,Takashi Masuko,Shinji Shimaoka,Shunsuke Otake,Kazuyuki Mitsukura. Владелец: Resonac Corp. Дата публикации: 2024-03-14.

Semiconductor device and semiconductor device manufacturing method

Номер патента: US20230253275A1. Автор: Nobuhiro HIGASHI. Владелец: Fuji Electric Co Ltd. Дата публикации: 2023-08-10.

Method for manufacturing semiconductor device and semiconductor device

Номер патента: US20240250025A1. Автор: Kazuyuki Mitsukura,Masaya TOBA. Владелец: Resonac Corp. Дата публикации: 2024-07-25.

Manufacturing method for semiconductor device, manufacturing apparatus for semiconductor device, and semiconductor device

Номер патента: US20120217497A1. Автор: Fumito Shoji,Noriteru Yamada. Владелец: Toshiba Corp. Дата публикации: 2012-08-30.

Via structures including etch-delay structures and semiconductor devices having via plugs

Номер патента: US9728572B2. Автор: Byung-Jun Park,Chang-Rok Moon,Seong-Ho Oh,Tae-Seok Oh,Seung-Hun Shin,June-Taeg Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-08-08.

Method Of Manufacturing Semiconductor Device And Semiconductor Device Having Unequal Pitch Vertical Channel Transistors

Номер патента: US20160284764A1. Автор: Teruyuki Mine. Владелец: SanDisk Technologies LLC. Дата публикации: 2016-09-29.

Method for manufacturing semiconductor device and semiconductor device

Номер патента: US20230282572A1. Автор: Shuai Guo. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-09-07.

Standard cell and semiconductor device including anchor nodes

Номер патента: US20240256751A1. Автор: Nien-Yu Tsai,Chin-Chang Hsu,Hsien-Hsin Sean LEE,Wen-Ju Yang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-01.

Semiconductor capacitor device and semiconductor apparatus including the same

Номер патента: EP4006934A1. Автор: Jaeho Lee,Younggeun Park,Yong-hee Cho,Seungwoo JANG,Joohoo LEE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-06-01.

Manufacturing method for semiconductor device and semiconductor device

Номер патента: US20190006268A1. Автор: Masatoshi Sugiura,Hiroi Oka. Владелец: Renesas Electronics Corp. Дата публикации: 2019-01-03.

Method for manufacturing semiconductor device, and semiconductor device

Номер патента: US20150194368A1. Автор: Akito Shimizu,Sadayuki Moroi,Kenji Nishikawa,Tomoo Imura. Владелец: Renesas Electronics Corp. Дата публикации: 2015-07-09.

Semiconductor device and semiconductor device fabrication method

Номер патента: US20230094425A1. Автор: Masanori Shindo. Владелец: Lapis Semiconductor Co Ltd. Дата публикации: 2023-03-30.

Method to form semiconductor device and semiconductor device thereof

Номер патента: US20230317526A1. Автор: Huang Liu,Liang Li,John Zhang,Sunil Singh,Chun Yu Wong,Heng Yang. Владелец: HeFeChip Corp Ltd. Дата публикации: 2023-10-05.

Self-aligned etch in semiconductor devices

Номер патента: US12080713B2. Автор: Cheng-Chi Chuang,Ching-Wei Tsai,Yi-Hsun CHIU,Shang-Wen Chang,Yu-Xuan Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-03.

Semiconductor device and semiconductor device with cooling member

Номер патента: US12074088B2. Автор: Takahiko Murakami. Владелец: Mitsubishi Electric Corp. Дата публикации: 2024-08-27.

Methods of manufacturing phase-change memory device and semiconductor device

Номер патента: US20130102120A1. Автор: Hye Jin Seo,Keum Bum Lee. Владелец: Hynix Semiconductor Inc. Дата публикации: 2013-04-25.

Semiconductor device fabrication method and semiconductor device

Номер патента: US20080173980A1. Автор: Yoshitaka Nakamura,Tomohiro Uno. Владелец: Elpida Memory Inc. Дата публикации: 2008-07-24.

Semiconductor device and semiconductor device fabrication method

Номер патента: US20080048247A1. Автор: Koji Yoshida,Nobuyoshi Takahashi,Hiroaki Kuriyama,Fumihiko Noro,Masataka Kusumi. Владелец: Individual. Дата публикации: 2008-02-28.

Method of manufacturing semiconductor device and semiconductor device

Номер патента: US20090039473A1. Автор: Masayuki Hata,Ryoji Hiroyama,Yasuto Miyake. Владелец: Sanyo Electric Co Ltd. Дата публикации: 2009-02-12.

Methods for forming contact structures and semiconductor devices thereof

Номер патента: US20240282673A1. Автор: Zhiliang Xia,Zhong Zhang,Kun Zhang,Linchun Wu,Wenxi Zhou. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-08-22.

Method for manufacturing semiconductor device and semiconductor device

Номер патента: US20230225101A1. Автор: Xiaojie Li. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-07-13.

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Номер патента: US20240321974A1. Автор: Toru Sugiyama,Hideki Sekiguchi,Akira Yoshioka,Yasuhiro Isobe. Владелец: Toshiba Electronic Devices and Storage Corp. Дата публикации: 2024-09-26.

Method of manufacturing semiconductor device and semiconductor device

Номер патента: US20120142167A1. Автор: Masayuki Hata,Ryoji Hiroyama,Yasuto Miyake. Владелец: Sanyo Electric Co Ltd. Дата публикации: 2012-06-07.

Method for manufacturing semiconductor device, and semiconductor device

Номер патента: US20120086121A1. Автор: Shigehisa Tajimi. Владелец: Seiko Epson Corp. Дата публикации: 2012-04-12.

Method of manufacturing semiconductor device and semiconductor device

Номер патента: US20240297250A1. Автор: Hao-Chung Kuo,Chia-Lung HUNG,Yi-Kai HSIAO. Владелец: Hon Hai Precision Industry Co Ltd. Дата публикации: 2024-09-05.

Method of manufacturing semiconductor device and semiconductor device

Номер патента: EP4425565A2. Автор: Hao-Chung Kuo,Chia-Lung HUNG,Yi-Kai HSIAO. Владелец: Hon Hai Precision Industry Co Ltd. Дата публикации: 2024-09-04.

Method of manufacturing semiconductor device and semiconductor device

Номер патента: EP4425565A3. Автор: Hao-Chung Kuo,Chia-Lung HUNG,Yi-Kai HSIAO. Владелец: Hon Hai Precision Industry Co Ltd. Дата публикации: 2024-09-18.

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Номер патента: US20240363626A1. Автор: Cheng-Chi Chuang,Ching-Wei Tsai,Yi-Hsun CHIU,Shang-Wen Chang,Yu-Xuan Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-31.

Method for manufacturing semiconductor device and semiconductor device

Номер патента: US20240321819A1. Автор: Sadatoshi Murakami,Atsushi Oga,Miki TOSHIMA. Владелец: Kioxia Corp. Дата публикации: 2024-09-26.

Leadframe and semiconductor device

Номер патента: US09984958B2. Автор: Shintaro Hayashi. Владелец: Shinko Electric Industries Co Ltd. Дата публикации: 2018-05-29.

Method for producing semiconductor device and semiconductor device

Номер патента: US09972722B2. Автор: Fujio Masuoka,Hiroki Nakamura. Владелец: Unisantis Electronics Singapore Pte Ltd. Дата публикации: 2018-05-15.

Field effect transistor and semiconductor device including the same

Номер патента: US09941360B2. Автор: Shigenobu Maeda,Seunghan Seo,Yeohyun SUNG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-04-10.

Semiconductor device and semiconductor memory device

Номер патента: US09865606B2. Автор: Daisuke Matsushita,Chika Tanaka. Владелец: Toshiba Corp. Дата публикации: 2018-01-09.

Semiconductor device and fabrication method thereof and semiconductor structure

Номер патента: US09842771B2. Автор: Chang-Fu Lin,Fu-Tang HUANG,Hung-Ming Chang,Chin-Tsai Yao,Ming-Chin Chuang. Владелец: Siliconware Precision Industries Co Ltd. Дата публикации: 2017-12-12.

Method for producing semiconductor device and semiconductor device

Номер патента: US09837317B2. Автор: Fujio Masuoka,Hiroki Nakamura. Владелец: Unisantis Electronics Singapore Pte Ltd. Дата публикации: 2017-12-05.

Method of manufacturing semiconductor device and semiconductor device

Номер патента: US09805985B2. Автор: Jhon Jhy Liaw. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-10-31.

Method of manufacturing semiconductor device and semiconductor device

Номер патента: US09805937B2. Автор: Tomoya KASHIWAZAKI. Владелец: Renesas Electronics Corp. Дата публикации: 2017-10-31.

Method for producing semiconductor device and semiconductor device

Номер патента: US09768294B2. Автор: Fujio Masuoka,Hiroki Nakamura. Владелец: Unisantis Electronics Singapore Pte Ltd. Дата публикации: 2017-09-19.

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Номер патента: US09768139B2. Автор: Chien-Fan Chen,Wan-Ting CHIU. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2017-09-19.

Transistor and semiconductor device

Номер патента: US09748401B2. Автор: Shunpei Yamazaki,Takayuki Inoue,Akiharu Miyanaga,Masashi TSUBUKU,Shuhei Yoshitomi,Suzunosuke Hiraishi,Hiromichi Godo,Koki Inoue,Erumu Kikuchi. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2017-08-29.

Method for producing semiconductor device and semiconductor device

Номер патента: US09595476B2. Автор: Fujio Masuoka,Hiroki Nakamura. Владелец: Unisantis Electronics Singapore Pte Ltd. Дата публикации: 2017-03-14.

Forming a Metal Contact Layer on Silicon Carbide and Semiconductor Device with Metal Contact Structure

Номер патента: US20180174840A1. Автор: Roland Rupp,Francisco Javier Santos Rodriguez,Romain Esteve,Ravi Keshav Joshi,Gerald Unegg. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2018-06-21.

Method for producing semiconductor device and semiconductor device

Номер патента: US20160343879A1. Автор: Fujio Masuoka,Hiroki Nakamura. Владелец: Unisantis Electronics Singapore Pte Ltd. Дата публикации: 2016-11-24.

Semiconductor device and semiconductor device manufacturing method

Номер патента: US20180204813A1. Автор: Taiichi Ogumi. Владелец: Lapis Semiconductor Co Ltd. Дата публикации: 2018-07-19.

Method of manufacturing semiconductor device and semiconductor device

Номер патента: US9761708B2. Автор: Tetsuya Iida. Владелец: Renesas Electronics Corp. Дата публикации: 2017-09-12.

Method of manufacturing semiconductor device and semiconductor device

Номер патента: US20190244808A1. Автор: Tetsuya Sakuma. Владелец: Ablic Inc. Дата публикации: 2019-08-08.

Semiconductor device having process failure detection circuit and semiconductor device production method

Номер патента: US20110012108A1. Автор: Toru Fujimura. Владелец: NEC Electronics Corp. Дата публикации: 2011-01-20.

Capacitor and semiconductor device including the capacitor

Номер патента: EP4216692A1. Автор: Jooho Lee,Byunghoon NA. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-07-26.

Method for manufacturing semiconductor device and semiconductor device

Номер патента: US20230053370A1. Автор: Jie Bai,Mengmeng Yang. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-02-23.

Manufacturing method of semiconductor device and semiconductor manufacturing apparatus

Номер патента: US20160079102A1. Автор: Kazuhiro Murakami,Shinya Fukayama,Yukifumi Oyama. Владелец: Toshiba Corp. Дата публикации: 2016-03-17.

Capacitor and semiconductor device including the capacitor

Номер патента: US20230231004A1. Автор: Jooho Lee,Byunghoon NA. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-07-20.

Insulating film, method for manufacturing semiconductor device, and semiconductor device

Номер патента: WO2013150927A1. Автор: Kenichi Okazaki,Toshinari Sasaki,Takashi HAMOCHI,Shuhei Yokoyama. Владелец: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.. Дата публикации: 2013-10-10.

Semiconductor device and semiconductor memory device

Номер патента: US20230309294A1. Автор: Keiji Ikeda,Mutsumi Okajima,Kotaro Noda,Nobuyoshi Saito,Takanori Akita. Владелец: Kioxia Corp. Дата публикации: 2023-09-28.

Insulating film, method for manufacturing semiconductor device, and semiconductor device

Номер патента: US20230006064A1. Автор: Kenichi Okazaki,Toshinari Sasaki,Takashi HAMOCHI,Shuhei Yokoyama. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2023-01-05.

Insulating film, method for manufacturing semiconductor device, and semiconductor device

Номер патента: US20200365739A1. Автор: Kenichi Okazaki,Toshinari Sasaki,Takashi HAMOCHI,Shuhei Yokoyama. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2020-11-19.

Method for manufacturing a semiconductor device and semiconductor device manufactured therefrom

Номер патента: EP1965415A3. Автор: Hideaki Tanaka,Tetsuya Hayashi,Shigeharu Yamagami,Masakatsu Hoshi. Владелец: Nissan Motor Co Ltd. Дата публикации: 2009-04-01.

Method for manufacturing semiconductor device and semiconductor device manufactured therefrom

Номер патента: US20080203401A1. Автор: Hideaki Tanaka,Tetsuya Hayashi,Shigeharu Yamagami,Masakatsu Hoshi. Владелец: Nissan Motor Co Ltd. Дата публикации: 2008-08-28.

Device detecting abnormality of secondary battery and semiconductor device

Номер патента: US20220045370A1. Автор: Kei Takahashi,Takanori Matsuzaki,Yuki Okamoto,Takahiko Ishizu,Minato ITO. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2022-02-10.

Method of manufacturing semiconductor device and semiconductor device

Номер патента: US20160247915A1. Автор: Tetsuya Iida. Владелец: Renesas Electronics Corp. Дата публикации: 2016-08-25.

Semiconductor device, display device and semiconductor integrated circuit

Номер патента: US20240274624A1. Автор: Hirotaka Hayashi. Владелец: Japan Display Inc. Дата публикации: 2024-08-15.

Semiconductor device and semiconductor package

Номер патента: US20070045792A1. Автор: Kenji Fuchinoue. Владелец: Oki Electric Industry Co Ltd. Дата публикации: 2007-03-01.

Semiconductor device and semiconductor module

Номер патента: US20230307393A1. Автор: Shinichi Akiyoshi,Kouki Yamamoto,Ryouichi AJIMOTO. Владелец: Nuvoton Technology Corp Japan. Дата публикации: 2023-09-28.

Method for manufacturing semiconductor device and semiconductor device

Номер патента: US20070020850A1. Автор: Masaru Takaishi. Владелец: Individual. Дата публикации: 2007-01-25.

Semiconductor device, template, and method of manufacturing template

Номер патента: US12068244B2. Автор: Yasuhito Yoshimizu,Kaori Umezawa,Kosuke TAKAI. Владелец: Kioxia Corp. Дата публикации: 2024-08-20.

Method of manufacturing semiconductor device and semiconductor device

Номер патента: US7622351B2. Автор: Kenya Kobayashi. Владелец: NEC Electronics Corp. Дата публикации: 2009-11-24.

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Номер патента: US20240297215A1. Автор: Yihwan Kim,Sungkeun Lim,Seunghun LEE,Jinbum Kim,Pankwi Park,Unki Kim,Ilgyou Shin,Yuyeong Jo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-09-05.

Semiconductor device and semiconductor memory device

Номер патента: US20230290882A1. Автор: Kazuhiro Matsuo,Kenichiro TORATANI,Ha Hoang,Tomoki ISHIMARU. Владелец: Kioxia Corp. Дата публикации: 2023-09-14.

Method for manufacturing semiconductor device and semiconductor device

Номер патента: US20040191996A1. Автор: Masaru Takaishi. Владелец: ROHM CO LTD. Дата публикации: 2004-09-30.

Semiconductor device, method of manufacturing semiconductor device, and semiconductor package

Номер патента: US10847616B2. Автор: Yusuke Kubo. Владелец: ROHM CO LTD. Дата публикации: 2020-11-24.

Manufacturing method of semiconductor device

Номер патента: US20080142901A1. Автор: Yutaka Takeshima,Yasuko Yoshida,Shuji Matsuo,Kota Funayama,Katsuhiro Uchimura. Владелец: Individual. Дата публикации: 2008-06-19.

Method of fabricating conductive straps to interconnect contacts to corresponding digit lines by employing an angled sidewall implant and semiconductor devices fabricated thereby

Номер патента: US20020121704A1. Автор: Shubneesh Batra,Tyler Lowrey. Владелец: Individual. Дата публикации: 2002-09-05.

Method of fabricating conductive straps to interconnect contacts to corresponding digit lines by employing an angled sidewall implant and semiconductor devices fabricated thereby

Номер патента: US20010028092A1. Автор: Shubneesh Batra,Tyler Lowrey. Владелец: Individual. Дата публикации: 2001-10-11.

Semiconductor device and semiconductor apparatus and electronic apparatus including the same

Номер патента: US20240234031A1. Автор: Jooho Lee,Narae HAN,Cheheung KIM,Beomseok Kim,Haeryong Kim,Jeonggyu SONG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-11.

Semiconductor device and semiconductor module

Номер патента: US20230032353A1. Автор: Naohito Mizuno,Takahiro Nakano,Yasushi Ookura,Seigo Oosawa,Yoshihiro INUTSUKA. Владелец: Denso Corp. Дата публикации: 2023-02-02.

Semiconductor device and semiconductor circuit

Номер патента: US12087850B2. Автор: Yoko Iwakaji,Tomoko Matsudai,Kenichi Matsushita,Norio Yasuhara,Yusuke Kawaguchi,Keiko Kawamura,Hiroko Itokazu,Shoko HANAGATA,Daiki Yoshikawa. Владелец: Toshiba Electronic Devices and Storage Corp. Дата публикации: 2024-09-10.

Semiconductor device and semiconductor device manufacturing method

Номер патента: US20240315037A1. Автор: Koichi Sakata,Keisuke Nakatsuka,Keita Hasegawa. Владелец: Kioxia Corp. Дата публикации: 2024-09-19.

Device isolation structure and manufacturing method therefor, and semiconductor device

Номер патента: EP4451317A1. Автор: LIU Yuan,Tianyi Zhang,Ming Pan,Yanjun Chen,Can Zhong,Fengjie Tang,Peng GOU,Xiran ZUO,Guidong JIN. Владелец: Huawei Digital Power Technologies Co Ltd. Дата публикации: 2024-10-23.

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Номер патента: US20240361382A1. Автор: Tomonori Nakamura,Masataka IKESU. Владелец: Hamamatsu Photonics KK. Дата публикации: 2024-10-31.

Semiconductor device manufacturing method and semiconductor device manufacturing system

Номер патента: US12136569B2. Автор: Mitsuhiko Ogihara. Владелец: Filnex Inc. Дата публикации: 2024-11-05.

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Номер патента: US09997553B2. Автор: Hiroshi Shibata. Владелец: Lapis Semiconductor Co Ltd. Дата публикации: 2018-06-12.

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Номер патента: US09922902B2. Автор: Ken Miyairi. Владелец: Shinko Electric Industries Co Ltd. Дата публикации: 2018-03-20.

Method for producing semiconductor device and semiconductor device

Номер патента: US09893179B2. Автор: Fujio Masuoka,Hiroki Nakamura. Владелец: Unisantis Electronics Singapore Pte Ltd. Дата публикации: 2018-02-13.

Method for producing semiconductor device and semiconductor device

Номер патента: US09865741B2. Автор: Fujio Masuoka,Hiroki Nakamura. Владелец: Unisantis Electronics Singapore Pte Ltd. Дата публикации: 2018-01-09.

Method for producing semiconductor device and semiconductor device

Номер патента: US09842926B2. Автор: Fujio Masuoka,Hiroki Nakamura. Владелец: Unisantis Electronics Singapore Pte Ltd. Дата публикации: 2017-12-12.

Semiconductor substrate and semiconductor device including the same

Номер патента: US09818824B2. Автор: Hyun-Jung Lee,Seung Hun Lee,Moon Seung Yang,Sun Jung Kim,Eun Hye Choi. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-11-14.

Method for manufacturing semiconductor device and semiconductor device

Номер патента: US09748244B2. Автор: Fujio Masuoka,Hiroki Nakamura. Владелец: Unisantis Electronics Singapore Pte Ltd. Дата публикации: 2017-08-29.

Method for manufacturing semiconductor device, and semiconductor device

Номер патента: US09741641B2. Автор: Akito Shimizu,Sadayuki Moroi,Kenji Nishikawa,Tomoo Imura. Владелец: Renesas Electronics Corp. Дата публикации: 2017-08-22.

Semiconductor device and semiconductor device manufacturing method

Номер патента: US09735109B2. Автор: Hidenao Kuribayashi. Владелец: Fuji Electric Co Ltd. Дата публикации: 2017-08-15.

Semiconductor devices and methods of manufacturing the same, and semiconductor packages including the semiconductor devices

Номер патента: US09691685B2. Автор: Hyung-Jun Jeon,Byung-lyul Park,Ji-Soon Park,Jum-Yong Park,Jin-Ho Chun,Kyu-Ha Lee,Jin-ho An. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-06-27.

Silicon carbide semiconductor devices having nitrogen-doped interface

Номер патента: US09613810B2. Автор: Michael MacMillan. Владелец: GLOBAL POWER TECHNOLOGIES GROUP Inc. Дата публикации: 2017-04-04.

Semiconductor device and semiconductor module with improved heat dissipation

Номер патента: US12033916B2. Автор: Hiroyuki Masumoto. Владелец: Mitsubishi Electric Corp. Дата публикации: 2024-07-09.

Method of manufacturing a semiconductor device and semiconductor device

Номер патента: US20060226558A1. Автор: Akihito Sakakidani,Toshinori Fukai. Владелец: NEC Electronics Corp. Дата публикации: 2006-10-12.

Monitoring circuit and semiconductor device

Номер патента: US20230204658A1. Автор: Tae-Pyeong Kim. Владелец: SK hynix Inc. Дата публикации: 2023-06-29.

Monitoring circuit and semiconductor device

Номер патента: US20210011076A1. Автор: Tae-Pyeong Kim. Владелец: SK hynix Inc. Дата публикации: 2021-01-14.

Monitoring circuit and semiconductor device

Номер патента: US20240168086A1. Автор: Tae-Pyeong Kim. Владелец: SK hynix Inc. Дата публикации: 2024-05-23.

Manufacturing method of semiconductor device and semiconductor device

Номер патента: US20240055506A1. Автор: Takashi Yoshimura,Motoyoshi KUBOUCHI,Makoto Shimosawa,Misaki Uchida. Владелец: Fuji Electric Co Ltd. Дата публикации: 2024-02-15.

Epitaxial Growth Process for Semiconductor Device and Semiconductor Device Comprising Epitaxial Layer Formed By Adopting the Same

Номер патента: US20210398805A1. Автор: Qin Deng,Huojin Tu,Zhanyuan Hu,Jueyang Liu. Владелец: Shanghai Huali Integrated Circuit Corp. Дата публикации: 2021-12-23.

Semiconductor device and semiconductor package having the same

Номер патента: US20110057328A1. Автор: Kyoung Sook PARK,Qwan Ho Chung,Yeo Song Yun. Владелец: Hynix Semiconductor Inc. Дата публикации: 2011-03-10.

Semiconductor device and semiconductor package having the same

Номер патента: US20100237473A1. Автор: Kyoung Sook PARK,Qwan Ho Chung,Yeo Song Yun. Владелец: Hynix Semiconductor Inc. Дата публикации: 2010-09-23.

Semiconductor device and semiconductor device manufacturing method

Номер патента: US20170287954A1. Автор: Hiroshi Shibata. Владелец: Lapis Semiconductor Co Ltd. Дата публикации: 2017-10-05.

Semiconductor package, method for fabricating the same, and semiconductor device

Номер патента: US7402898B2. Автор: Katsutoshi Shimizu,Tatsuya Hirano,Hisaho Inao. Владелец: Matsushita Electric Industrial Co Ltd. Дата публикации: 2008-07-22.

Method of manufacturing semiconductor device and semiconductor device

Номер патента: US20240105681A1. Автор: Masayuki Miura,Satoru Itakura. Владелец: Kioxia Corp. Дата публикации: 2024-03-28.

Display device and semiconductor device

Номер патента: US20230074655A1. Автор: Akihiro Hanada,Hajime Watakabe,Toshihide Jinnai,lsao SUZUMURA,Ryo ONODERA. Владелец: Japan Display Inc. Дата публикации: 2023-03-09.

Contacts for semiconductor devices and methods of forming the same

Номер патента: US20240250143A1. Автор: Jyun-De Wu,Yi-Chen Wang,Yi-Chun Chang,Te-Chih Hsiung,Yuan-Tien Tu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-25.

Media shield with emi capability for pressure sensor

Номер патента: US20200321286A1. Автор: Stephen Ryan Hooper,Dwight Lee Daniels,Gary Carl Johnson,Thomas Cobb Speight. Владелец: NXP USA Inc. Дата публикации: 2020-10-08.

Manufacturing method for semiconductor device and semiconductor device

Номер патента: US20090309133A1. Автор: Kunihiro Miyazaki,Takayuki Ito,Takuo Ohashi,Kiyotaka Miyano,Kouji Matsuo,Kenichi Yoshino,Toshihiko Iinuma,Yusuke Oshiki,Takaharu Itani. Владелец: Individual. Дата публикации: 2009-12-17.

Fabrication method for semiconductor device, exposure method, pattern correction method and semiconductor device

Номер патента: US7921386B2. Автор: Toshiyuki Ishimaru. Владелец: Sony Corp. Дата публикации: 2011-04-05.

Semiconductor device and method of manufacturing the same

Номер патента: US20140097448A1. Автор: Jai-Kwang Shin,Chang-Yong Um,Woong-je SUNG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2014-04-10.

Display device and semiconductor device

Номер патента: US12072595B2. Автор: Isao Suzumura,Akihiro Hanada,Hajime Watakabe,Toshihide Jinnai,Ryo ONODERA. Владелец: Japan Display Inc. Дата публикации: 2024-08-27.

Semiconductor device manufacturing method and semiconductor device manufacturing apparatus

Номер патента: US8883635B2. Автор: Masanori Shindou. Владелец: Lapis Semiconductor Co Ltd. Дата публикации: 2014-11-11.

Semiconductor device manufacturing method and semiconductor device manufacturing apparatus

Номер патента: US20130023117A1. Автор: Masanori Shindou. Владелец: Lapis Semiconductor Co Ltd. Дата публикации: 2013-01-24.

Manufacturing method of semiconductor device and semiconductor device

Номер патента: US20190318939A1. Автор: Shoji Hashizume,Keita Takada. Владелец: Renesas Electronics Corp. Дата публикации: 2019-10-17.

Methods for forming contact structures and semiconductor devices including forming a spacer structure into a base structure

Номер патента: US12057372B2. Автор: Zhiliang Xia,Zhong Zhang,Kun Zhang,Linchun Wu,Wenxi Zhou. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-08-06.

Process for filling deep trenches in a semiconductor material body, and semiconductor device resulting from the same process

Номер патента: WO2012020290A3. Автор: Mario Giuseppe Saggio,Giuseppe Arena,Giuseppe Morale,Domenico Murabito,Letterio Fiore. Владелец: STMICROELECTRONICS S.R.L.. Дата публикации: 2012-05-18.

Process for filling deep trenches in a semiconductor material body, and semiconductor device resulting from the same process

Номер патента: EP2599107A2. Автор: Mario Giuseppe Saggio,Giuseppe Arena,Giuseppe Morale,Domenico Murabito,Letterio Fiore. Владелец: STMICROELECTRONICS SRL. Дата публикации: 2013-06-05.

Semiconductor device and semiconductor device manufacturing method

Номер патента: US20070126063A1. Автор: Tomonori Aoyama. Владелец: Individual. Дата публикации: 2007-06-07.

Memory cell and semiconductor memory device with the same

Номер патента: US20240284655A1. Автор: Seung Hwan Kim. Владелец: SK hynix Inc. Дата публикации: 2024-08-22.

Display device and semiconductor device

Номер патента: US12085823B2. Автор: Isao Suzumura,Akihiro Hanada,Hajime Watakabe,Toshihide Jinnai,Ryo ONODERA. Владелец: Japan Display Inc. Дата публикации: 2024-09-10.

Semiconductor device and semiconductor module

Номер патента: US12080664B2. Автор: Shinichi Akiyoshi,Kouki Yamamoto,Ryouichi AJIMOTO. Владелец: Nuvoton Technology Corp Japan. Дата публикации: 2024-09-03.

Semiconductor device and method of manufacture

Номер патента: US12100672B2. Автор: Chen-Hua Yu,Jiun Yi Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-24.

Stacked layer type semiconductor device and semiconductor system including the same

Номер патента: US20130294134A1. Автор: Ho Cheol Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2013-11-07.

Semiconductor device and semiconductor device manufacturing method

Номер патента: US20240304574A1. Автор: Atsushi Ito,Yasuo Yamaguchi,Manabu Yoshino,Toshihiro Imasaka,Yohei Torii. Владелец: Mitsubishi Electric Corp. Дата публикации: 2024-09-12.

Thin film structure and semiconductor device including the same

Номер патента: US12107140B2. Автор: Seunggeol NAM,Jinseong Heo,Sanghyun JO,Taehwan MOON. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-10-01.

Semiconductor Device and Method of Manufacture

Номер патента: US20240371791A1. Автор: Chen-Hua Yu,Jiun Yi Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-11-07.

Semiconductor device, communication module, and semiconductor device manufacturing method

Номер патента: US12068407B2. Автор: Masashi Yanagita,Katsuji Matsumoto. Владелец: Sony Semiconductor Solutions Corp. Дата публикации: 2024-08-20.

Semiconductor device

Номер патента: US09985069B2. Автор: Takayuki Ikeda,Yoshiyuki Kurokawa,Munehiro KOZUMA,Hikaru Tamura. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2018-05-29.

Electrostatic protection circuit and semiconductor device including the same

Номер патента: US09846194B2. Автор: Nam Pyo Hong. Владелец: SK hynix Inc. Дата публикации: 2017-12-19.

Resistance correction circuit, resistance correction method, and semiconductor device

Номер патента: US09829911B2. Автор: Takashi Nakamura,Kosuke YAYAMA. Владелец: Renesas Electronics Corp. Дата публикации: 2017-11-28.

Method of manufacturing semiconductor devices and semiconductor device containing oxygen-related thermal donors

Номер патента: US09825131B2. Автор: Hans-Joachim Schulze,Johannes Georg Laven,Moriz Jelinek,Werner Schustereder,Michael Stadtmueller. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2017-11-21.

Method of manufacturing semiconductor device and semiconductor device

Номер патента: US09780163B2. Автор: Satoru Kameyama,Yuki Horiuchi. Владелец: Toyota Motor Corp. Дата публикации: 2017-10-03.

Semiconductor device and semiconductor device manufacturing method

Номер патента: US09761463B2. Автор: Takamitsu Yoshida,Atsuko Kawasaki,Kazumasa Tanida,Kuniaki Utsumi. Владелец: Toshiba Memory Corp. Дата публикации: 2017-09-12.

Methods of forming III-V semiconductor structures using multiple substrates, and semiconductor devices fabricated using such methods

Номер патента: US09716164B2. Автор: Mariam Sadaka. Владелец: Soitec SA. Дата публикации: 2017-07-25.

Manufacturing method of semiconductor device, and semiconductor device

Номер патента: US09673073B2. Автор: Takayuki Nosaka. Владелец: Renesas Electronics Corp. Дата публикации: 2017-06-06.

Semiconductor device and method of its manufacturing

Номер патента: RU2719569C1. Автор: Ясуаки ХАЯМИ,Тецуя ХАЯСИ,Вэй НИ,Риота ТАНАКА,Кейсуке ТАКЕМОТО. Владелец: Ниссан Мотор Ко., Лтд.. Дата публикации: 2020-04-21.

Semiconductor element and semiconductor device

Номер патента: US20160035713A1. Автор: Kazushige Iwamoto. Владелец: Lapis Semiconductor Co Ltd. Дата публикации: 2016-02-04.

Semiconductor device structure and methods of forming the same

Номер патента: US20230010934A1. Автор: Tsung-Han Tsai,Gulbagh SINGH. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-01-12.

Method for manufacturing semiconductor device and semiconductor device

Номер патента: US7855125B2. Автор: Takaoki Sasaki. Владелец: Seiko Epson Corp. Дата публикации: 2010-12-21.

Semiconductor Device and Method

Номер патента: US20240250019A1. Автор: Ming-Da Cheng,Po-Hao Tsai,Ting-Li Yang,Yung-Han Chuang,Hsueh-Sheng Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-25.

Method of manufacturing semiconductor device and semiconductor device

Номер патента: US20190097041A1. Автор: Kinya Ohtani. Владелец: Shindengen Electric Manufacturing Co Ltd. Дата публикации: 2019-03-28.

Method of manufacturing a semiconductor device and semiconductor device

Номер патента: US20170053992A1. Автор: Masakazu Okada,Sachiko Aoi. Владелец: Toyota Motor Corp. Дата публикации: 2017-02-23.

Method of manufacturing semiconductor device and semiconductor device

Номер патента: US20150171021A1. Автор: Takeshi Watanabe,Takashi Imoto,Soichi Homma,Yuusuke Takano,Katsunori Shibuya. Владелец: Toshiba Corp. Дата публикации: 2015-06-18.

Electrode structure including metal and heat dissipation layer and semiconductor device including the same

Номер патента: US20230178453A1. Автор: Sang Hyun Lee,Hokyun Rho,Min Hee Jeong. Владелец: INDUSTRY FOUNDATION OF CHONNAM NATIONAL UNIVERSITY. Дата публикации: 2023-06-08.

Semiconductor device including recess gate structure and method of manufacturing the same

Номер патента: US20240274713A1. Автор: Hyun-Yong Yu,Seung Geun JUNG,Mu Yeong SON. Владелец: SK hynix Inc. Дата публикации: 2024-08-15.

Semiconductor element and semiconductor device

Номер патента: US09935093B2. Автор: Kazushige Iwamoto. Владелец: Lapis Semiconductor Co Ltd. Дата публикации: 2018-04-03.

Lead frame and semiconductor device

Номер патента: US09831158B2. Автор: Shintaro Hayashi. Владелец: Shinko Electric Industries Co Ltd. Дата публикации: 2017-11-28.

Method of manufacturing semiconductor device using plasma doping process and semiconductor device manufactured by the method

Номер патента: US09825153B2. Автор: Sunghyun Choi,Yong-Suk Tak,Kyungin Choi,JaeJong Han,Bonyoung Koo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-11-21.

Resin-attached lead frame and semiconductor device

Номер патента: US09806241B2. Автор: Chikao Ikenaga,Kazunori Oda. Владелец: DAI NIPPON PRINTING CO LTD. Дата публикации: 2017-10-31.

Method for manufacturing semiconductor device and semiconductor device manufactured thereby

Номер патента: US20230207683A1. Автор: Junghee Park,Dae Hwan Chun,Youngkyun Jung,NackYong JOO,Jungyeop Hong. Владелец: Kia Corp. Дата публикации: 2023-06-29.

Semiconductor device and semiconductor storage device

Номер патента: US20230411327A1. Автор: Masayoshi Tagami. Владелец: Kioxia Corp. Дата публикации: 2023-12-21.

Semiconductor device and semiconductor device fabrication method

Номер патента: US20140374898A1. Автор: Kousuke Komatsu. Владелец: Fuji Electric Co Ltd. Дата публикации: 2014-12-25.

Semiconductor device manufacturing method and semiconductor device

Номер патента: US20240155824A1. Автор: Koji Akiyama,Koji Maekawa,Masahiro Ikejiri,Masaki TERABAYASHI. Владелец: Tokyo Electron Ltd. Дата публикации: 2024-05-09.

Super-junction structure and method for manufacturing the same and semiconductor device thereof

Номер патента: US20180158900A1. Автор: He Sun,Zhongping Liao. Владелец: Hangzhou Silergy Semiconductor Technology LTD. Дата публикации: 2018-06-07.

Logic circuit formed using unipolar transistor, and semiconductor device

Номер патента: US12040795B2. Автор: Takeshi Aoki,Hiroki Inoue,Shintaro Harada,Sho Nagao,Munehiro KOZUMA,Shuji Fukai,Fumika AKASAWA. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2024-07-16.

Semiconductor device and semiconductor device structure

Номер патента: US20020096784A1. Автор: Hitoshi Shibue,Koichi Kamikuri. Владелец: Sony Corp. Дата публикации: 2002-07-25.

Metal-insulator-metal (mim) capacitor and semiconductor device

Номер патента: US20200273946A1. Автор: Junghyun Cho,Song yi Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-08-27.

Method for producing semiconductor device and semiconductor device

Номер патента: US20140097494A1. Автор: Fujio Masuoka,Hiroki Nakamura. Владелец: Unisantis Electronics Singapore Pte Ltd. Дата публикации: 2014-04-10.

Semiconductor device with spacer of gradually changed thickness and manufacturing method thereof, and electronic device including the semiconductor device

Номер патента: US11728408B2. Автор: Huilong Zhu. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2023-08-15.

Semiconductor device and manufacturing method thereof and electronic apparatus including the same

Номер патента: US20230282743A1. Автор: Huilong Zhu. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2023-09-07.

Semiconductor device and manufacturing method thereof and electronic apparatus including the same

Номер патента: US12068413B2. Автор: Huilong Zhu. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2024-08-20.

Method of forming epitaxial silicon layer and semiconductor device thereof

Номер патента: US20190131439A1. Автор: Yeur-Luen Tu,Yu-Hung Cheng,Po-Jung Chiang,Yen-Hsiu Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2019-05-02.

Semiconductor Device Including a Ferroelectric Field-Effect Transistor, and Semiconductor Integrated Circuit Device Employing Same

Номер патента: US20080151599A1. Автор: Masato Moriwake,Daisuke Nishinohara. Владелец: ROHM CO LTD. Дата публикации: 2008-06-26.

Semiconductor device formation substrate and semiconductor device manufacturing method

Номер патента: US20110133185A1. Автор: Shinji Wakisaka. Владелец: Casio Computer Co Ltd. Дата публикации: 2011-06-09.

Method for manufacturing semiconductor device, and semiconductor device

Номер патента: US8101462B2. Автор: Shigehisa Tajimi. Владелец: Seiko Epson Corp. Дата публикации: 2012-01-24.

Method of forming shallow trench isolation and semiconductor device

Номер патента: US20150364360A1. Автор: Teng-Chun Tsai,De-Fang Chen,Li-Ting Wang,Ching-Feng Fu,Cheng-Tung Lin,Chih-tang Peng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2015-12-17.

Semiconductor device fabricating method and semiconductor device

Номер патента: US9660018B2. Автор: Takuo Narusawa. Владелец: Lapis Semiconductor Co Ltd. Дата публикации: 2017-05-23.

Method for mounting a semiconductor chip on a substrate and semiconductor device adapted for mounting on a substrate

Номер патента: US20010038152A1. Автор: I-Ming Chen. Владелец: Individual. Дата публикации: 2001-11-08.

Semiconductor device and semiconductor package having the same

Номер патента: US20200020641A1. Автор: Un-Byoung Kang,Yeong-kwon Ko,Jun-Yeong Heo,Ja-Yeon Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-01-16.

Method for manufacturing semiconductor device and semiconductor device

Номер патента: US20150340475A1. Автор: Chih-Lin Wang,Long-Jie HONG,Chien-Chih Lin,Chia-Der Chang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2015-11-26.

Method for manufacturing semiconductor device, and semiconductor device

Номер патента: US20080284013A1. Автор: Shigehisa Tajimi. Владелец: Seiko Epson Corp. Дата публикации: 2008-11-20.

Method for manufacturing semiconductor device, particle, and semiconductor device

Номер патента: US20110201193A1. Автор: Fumihiro Bekku. Владелец: Renesas Electronics Corp. Дата публикации: 2011-08-18.

Semiconductor device and manufacturing method thereof and electronic apparatus including the same

Номер патента: US20210351297A1. Автор: Huilong Zhu. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2021-11-11.

Method of manufacturing semiconductor devices and semiconductor devices

Номер патента: US20240250173A1. Автор: Guan-Jie Shen,Hsiao-Chun CHANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-25.

Semiconductor devices having upper conductive patterns and semiconductor packages having the same

Номер патента: US20240332228A1. Автор: Jongmin Lee,Joongwon Shin,Yeonjin Lee,Jimin CHOI. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-10-03.

Logic circuit formed using unipolar transistor, and semiconductor device

Номер патента: US20240364343A1. Автор: Takeshi Aoki,Hiroki Inoue,Shintaro Harada,Sho Nagao,Munehiro KOZUMA,Shuji Fukai,Fumika AKASAWA. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2024-10-31.

Semiconductor device and method for forming the same

Номер патента: US20240321751A1. Автор: Yee-Chia Yeo,Chun-Hsien Huang,Liang-Yin Chen,Huicheng Chang,Su-Hao LIU,Kuo-Ju Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-26.

Semiconductor module and semiconductor driving device

Номер патента: US09978670B2. Автор: Yoshihito Asao,Akihiko Mori,Yu KAWANO,Shunsuke FUSHIE. Владелец: Mitsubishi Electric Corp. Дата публикации: 2018-05-22.

Semiconductor device and semiconductor device fabrication method

Номер патента: US09947575B2. Автор: Kenichi Watanabe,Yasunori Uchino. Владелец: Fujitsu Semiconductor Ltd. Дата публикации: 2018-04-17.

Super-junction structure and method for manufacturing the same and semiconductor device thereof

Номер патента: US09905636B2. Автор: He Sun,Zhongping Liao. Владелец: Hangzhou Silergy Semiconductor Technology LTD. Дата публикации: 2018-02-27.

Manufacturing method of semiconductor device and semiconductor device manufacturing apparatus

Номер патента: US09837279B2. Автор: Yukiteru Matsui,Akifumi Gawase,Takahiko Kawasaki. Владелец: Toshiba Memory Corp. Дата публикации: 2017-12-05.

Method of using platinum metallization in system of redistribution of contact pads of crystals of integrated microcircuits and semiconductor devices

Номер патента: RU2717264C1. Автор: Никита Владимирович Рогозин,Виталий Владимирович Побединский. Владелец: Акционерное общество "Научно-исследовательский институт электронной техники". Дата публикации: 2020-03-19.

Semiconductor device manufacturing method

Номер патента: RU2688864C1. Автор: Гасан Абакарович Мустафаев,Арслан Гасанович Мустафаев,Абдулла Гасанович Мустафаев,Наталья Васильевна Черкесова. Владелец: Федеральное государственное бюджетное образовательное учреждение высшего образования "Кабардино-Балкарский государственный университет им. Х.М. Бербекова" (КБГУ). Дата публикации: 2019-05-22.

Semiconductor device manufacturing method and semiconductor device manufacturing apparatus

Номер патента: US8101507B2. Автор: Shigeru Tahara,Ryuichi Asako,Gousuke Shiraishi. Владелец: Tokyo Electron Ltd. Дата публикации: 2012-01-24.

Semiconductor device, semiconductor memory device, and semiconductor device manufacturing method

Номер патента: US20210296238A1. Автор: Mitsuo Ikeda,Akihiro Kajita,Daisuke Ikeno. Владелец: Kioxia Corp. Дата публикации: 2021-09-23.

Ferroelectric device and semiconductor device

Номер патента: US20230363174A1. Автор: Shunpei Yamazaki,Kazuaki Ohshima,Takeshi Aoki,Masashi Oota,Yasuhiro Jinbo,Kazuma Furutani,Hitoshi KUNITAKE. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2023-11-09.

Semiconductor device including combed bond pad opening, assemblies and methods

Номер патента: US6232146B1. Автор: Warren M. Farnworth,Walter L. Moden,Larry D. Kinsman. Владелец: Micron Technology Inc. Дата публикации: 2001-05-15.

Semiconductor device and semiconductor assembly apparatus for semiconductor device

Номер патента: US6841417B2. Автор: Masao Jojiki. Владелец: Asahi Kogaku Kogyo Co Ltd. Дата публикации: 2005-01-11.

Semiconductor device, methods of manufacturing semiconductor device, and semiconductor module

Номер патента: US20240243198A1. Автор: Koichi Hasegawa,Kazuhisa Mori,Yasutaka Nakashiba,Hiroshi Yanagigawa. Владелец: Renesas Electronics Corp. Дата публикации: 2024-07-18.

Duty correction device including duty correction circuit and semiconductor device including duty correction device

Номер патента: US11894102B2. Автор: Jin Hyung Lee,Chang Kwon Lee,Su Hyun OH. Владелец: SK hynix Inc. Дата публикации: 2024-02-06.

Integrated circuit chip and semiconductor device including the same

Номер патента: US20190293711A1. Автор: Dong-Uk Lee. Владелец: SK hynix Inc. Дата публикации: 2019-09-26.

Integrated circuit chip and semiconductor device including the same

Номер патента: US10761132B2. Автор: Dong-Uk Lee. Владелец: SK hynix Inc. Дата публикации: 2020-09-01.

Semiconductor manufacturing method and semiconductor manufacturing apparatus

Номер патента: US20240258115A1. Автор: Yoshihide Yamaguchi. Владелец: Hitachi High Tech Corp. Дата публикации: 2024-08-01.

Semiconductor packaging method and semiconductor device based on molding process

Номер патента: US11728368B2. Автор: TAKEHIKO Tanaka,Zhenyu Chen,Mingzhu Wang,Nan Guo,Bojie ZHAO,Heng JIANG. Владелец: Ningbo Sunny Opotech Co Ltd. Дата публикации: 2023-08-15.

Method for manufacturing a semiconductor device and semiconductor device

Номер патента: US20210366764A1. Автор: Jochen Kraft,Georg Parteder,Raffaele Coppeta. Владелец: ams AG. Дата публикации: 2021-11-25.

Routing paths and semiconductor devices including the same

Номер патента: US20160035669A1. Автор: Won John CHOI. Владелец: SK hynix Inc. Дата публикации: 2016-02-04.

Semiconductor device and semiconductor assembly apparatus for semiconductor device

Номер патента: US20020089033A1. Автор: Masao Jojiki. Владелец: Individual. Дата публикации: 2002-07-11.

Semiconductor device and semiconductor assembly apparatus for semiconductor device

Номер патента: US20010042911A1. Автор: Masao Jojiki. Владелец: Individual. Дата публикации: 2001-11-22.

Semiconductor device and semiconductor assembly apparatus for semiconductor device

Номер патента: US20030001257A1. Автор: Masao Jojiki. Владелец: Individual. Дата публикации: 2003-01-02.

Packaged Semiconductor Devices, Methods of Packaging Semiconductor Devices, and PoP Devices

Номер патента: US20150050779A1. Автор: Jing-Cheng Lin,Po-Hao Tsai,Jui-Pin Hung. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2015-02-19.

Method for manufacturing a semiconductor device, and semiconductor device

Номер патента: US9524940B2. Автор: Thomas Fischer,Carsten Ahrens,Andre Schmenn,Damian Sojka. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2016-12-20.

Method of manufacturing semiconductor device and semiconductor device

Номер патента: NL2018614B1. Автор: OHTANI Kinya. Владелец: Shindengen Electric Mfg. Дата публикации: 2018-02-01.

Semiconductor device and manufacturing method thereof, and electronic device including the semiconductor device

Номер патента: US12046672B2. Автор: Huilong Zhu. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2024-07-23.

Semiconductor device in a level shifter with electrostatic discharge (esd) protection circuit and semiconductor chip

Номер патента: US20170294431A1. Автор: Kyong Jin HWANG,Hyun Kwang JEONG. Владелец: MagnaChip Semiconductor Ltd. Дата публикации: 2017-10-12.

Semiconductor device in a level shifter with electrostatic discharge (esd) protection circuit and semiconductor chip

Номер патента: US20180358349A1. Автор: Kyong Jin HWANG,Hyun Kwang JEONG. Владелец: MagnaChip Semiconductor Ltd. Дата публикации: 2018-12-13.

Semiconductor device in a level shifter with electrostatic discharge (esd) protection circuit and semiconductor chip

Номер патента: US20210265337A1. Автор: Kyong Jin HWANG,Hyun Kwang JEONG. Владелец: MagnaChip Semiconductor Ltd. Дата публикации: 2021-08-26.

Semiconductor device including combed bond pad opening, assemblies and methods

Номер патента: US20010050845A1. Автор: Walter Moden,Warren Farnworth,Larry Kinsman. Владелец: Individual. Дата публикации: 2001-12-13.

Semiconductor device and semiconductor module including semiconductor devices

Номер патента: US20090184430A1. Автор: Mitsuhisa Watanabe,Ichiro Anjoh. Владелец: Elpida Memory Inc. Дата публикации: 2009-07-23.

Semiconductor device manufacturing method, x-ray diffraction device and semiconductor pattern transfer system

Номер патента: US20240231234A1. Автор: Yasuhiro Matsuo. Владелец: Mitsubishi Electric Corp. Дата публикации: 2024-07-11.

Method of manufacturing semiconductor device and semiconductor device

Номер патента: NL2018616B1. Автор: OHTANI Kinya. Владелец: Shindengen Electric Mfg. Дата публикации: 2018-02-01.

Semiconductor device, manufacturing method thereof, and electronic device including the same

Номер патента: US20200251557A1. Автор: Huilong Zhu. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2020-08-06.

Semiconductor device in a level shifter with electrostatic discharge (ESD) protection circuit and semiconductor chip

Номер патента: US12057442B2. Автор: Kyong Jin HWANG,Hyun Kwang JEONG. Владелец: MagnaChip Semiconductor Ltd. Дата публикации: 2024-08-06.

Semiconductor devices including conductive lines and methods of forming the semiconductor devices

Номер патента: US09911693B2. Автор: William R. Brown,David A. Kewley,Tim H. Bossart,Nikolay A. Mirin,Jenna L. Russon,Brian R. Watson. Владелец: Micron Technology Inc. Дата публикации: 2018-03-06.

Method for forming improved liner layer and semiconductor device including the same

Номер патента: US09859157B1. Автор: Chih-Chao Yang,Conal E. Murray. Владелец: International Business Machines Corp. Дата публикации: 2018-01-02.

Method of forming epitaxial buffer layer for finFET source and drain junction leakage reduction and semiconductor device having reduced junction leakage

Номер патента: US09793272B2. Автор: Dechao Guo,Shogo Mochizuki,Andreas Scholze,Chun-Chen Yeh. Владелец: Renesas Electronics Corp. Дата публикации: 2017-10-17.

Electronic component mounting device and semiconductor device including the same

Номер патента: US09723718B2. Автор: Taichi Obara,Rei YONEYAMA,Takami Otsuki,Eiju Shitama. Владелец: Mitsubishi Electric Corp. Дата публикации: 2017-08-01.

Semiconductor device in a level shifter with electrostatic discharge (ESD) protection circuit and semiconductor chip

Номер патента: US09721941B2. Автор: Kyong Jin HWANG,Hyun Kwang JEONG. Владелец: MagnaChip Semiconductor Ltd. Дата публикации: 2017-08-01.

Memory device, and semiconductor device and electronic appliance including the same

Номер патента: US09715920B2. Автор: Takahiko Ishizu. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2017-07-25.

Modified self-aligned contact process and semiconductor device

Номер патента: US09711611B2. Автор: Kuang-Hsin Chen,Tsung-Yu CHIANG,Wei-Shuo HO. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-07-18.

Crystal, semiconductor element and semiconductor device

Номер патента: US20210217869A1. Автор: Yuji Kato,Osamu Imafuji,Ryohei KANNO,Kazuyoshi NORIMATSU. Владелец: Flosfia Inc. Дата публикации: 2021-07-15.

Semiconductor device and semiconductor module

Номер патента: US20240006475A1. Автор: Seiya Nakano. Владелец: Mitsubishi Electric Corp. Дата публикации: 2024-01-04.

Method for manufacturing semiconductor device and semiconductor device

Номер патента: US20220319908A1. Автор: Zhan Ying,Kui Zhang. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2022-10-06.

Conductive electrostatic chuck lift pin, electrostatic chuck comprising the same, and semiconductor manufacturing method using the same

Номер патента: US20230282507A1. Автор: Joon Ho Lee. Владелец: Individual. Дата публикации: 2023-09-07.

Semiconductor device including passivation layer and method of fabricating electronic apparatus

Номер патента: US20230361251A1. Автор: Hyunjoon Kim,Dongkyun KIM,Seogwoo Hong,Junsik Hwang,Kyungwook Hwang,Minchul YU. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-11-09.

Semiconductor devices and fabrication methods thereof, memory systems

Номер патента: US20240164117A1. Автор: LAN Yao,CHENG Chen,Jing Li,Quan Zhang,Yanwei Shi,Boru Xie. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-05-16.

Method for manufacturing semiconductor device and semiconductor device

Номер патента: EP4181182A1. Автор: Hiroshi Takeno,Tsuyoshi Ohtsuki. Владелец: Shin Etsu Handotai Co Ltd. Дата публикации: 2023-05-17.

Discrete component backward traceability and semiconductor device forward traceability

Номер патента: EP2625708A1. Автор: Hem Takiar,Cheeman Yu,Frank Lu,Jiaming Shi,Didier Chavet,Chih-Chiang Tung. Владелец: SanDisk SemiConductor Shanghai Co Ltd. Дата публикации: 2013-08-14.

Method of manufacturing a semiconductor device and semiconductor device

Номер патента: US20050140000A1. Автор: Marc De Samber,Johannus Weekamp,Durandus Dijken. Владелец: Individual. Дата публикации: 2005-06-30.

Method of manufacturing a semiconductor device and semiconductor device

Номер патента: US20040157376A1. Автор: Marc De Samber,Johannus Weekamp,Durandus Dijken. Владелец: Individual. Дата публикации: 2004-08-12.

Semiconductor device and semiconductor device preparation method

Номер патента: EP3933903A1. Автор: Pingheng WU. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2022-01-05.

Method of manufacturing semiconductor device having base and semiconductor element and semiconductor device

Номер патента: US20170229415A1. Автор: Daisuke Hiratsuka,Yuchen Hsu. Владелец: Toshiba Corp. Дата публикации: 2017-08-10.

Method and installation for producing a semiconductor device, and semiconductor device

Номер патента: WO2011045398A1. Автор: Marcus Bender,Evelyn Scheer,Fabio Pieralisi. Владелец: Applied Materials, Inc.. Дата публикации: 2011-04-21.

Method of fabricating a semiconductor device,method of cleaning a crystalline surface of a semiconductor,and semiconductor device

Номер патента: GB9506106D0. Автор: . Владелец: Mitsubishi Electric Corp. Дата публикации: 1995-05-10.

Semiconductor device and manufacturing method thereof

Номер патента: US10079157B2. Автор: YONG Song,Doo Hyun Park,Eun Young Lee,Jong Sik Paek,Seong Min Seo,Pil Je Sung,Seo Yeon Ahn,Sung Geun Kang,Wang Gu Lee. Владелец: Amkor Technology Inc. Дата публикации: 2018-09-18.

Semiconductor device fabrication method and semiconductor device fabrication system

Номер патента: US20080081384A1. Автор: Masanori Terahara,Junji Oh. Владелец: Fujitsu Ltd. Дата публикации: 2008-04-03.

Semiconductor device and semiconductor module provided with same

Номер патента: US20180204778A1. Автор: Yukimasa Hayashida,Shigeru Hasegawa,Isao Umezaki,Ryutaro Date,Ryo Tsuda. Владелец: Mitsubishi Electric Corp. Дата публикации: 2018-07-19.

Semiconductor device and manufacturing method thereof, and mounting method of semiconductor device

Номер патента: US20150035156A1. Автор: Kazuhito Ichinose,Kazuyuki Omori,Seiji Muranaka. Владелец: Renesas Electronics Corp. Дата публикации: 2015-02-05.

Method for fabricating semiconductor device, and semiconductor device made thereby

Номер патента: US20150236158A1. Автор: Chin-Cheng Chien,Chun-Jen Chen,Tien-Wei YU,Tsung-Mu Yang,Tien-Chen Chan,Ming-Hua Chang,Yu-Shu Lin,I-Cheng Hu,Chieh-Lung Wu. Владелец: United Microelectronics Corp. Дата публикации: 2015-08-20.

Manufacturing method for semiconductor chips and semiconductor wafer

Номер патента: WO2006075725A3. Автор: Kiyoshi Arita,Teruaki Nishinaka. Владелец: Teruaki Nishinaka. Дата публикации: 2007-02-08.

Display device and semiconductor device containing the same

Номер патента: EP3400620A1. Автор: Yong Qiao,Hongfei Cheng,Xueguang HAO,Xinyin WU. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2018-11-14.

Semiconductor device, optical sensor device and semiconductor device manufacturing method

Номер патента: US20120217478A1. Автор: Hiroshi Inada,Takashi Ishizuka,Hideaki Nakahata,Yasuhiro Iguchi,Katsushi Akita,Youichi Nagai,Kei Fujii. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2012-08-30.

Oxidation and corrosion prevention in semiconductor devices and semiconductor device assemblies

Номер патента: US12051661B2. Автор: George Chang,Srinivasa Reddy Yeduru. Владелец: Semiconductor Components Industries LLC. Дата публикации: 2024-07-30.

Semiconductor device and semiconductor memory device

Номер патента: US20220085182A1. Автор: Tomomasa Ueda,Keiji Ikeda,Junji Kataoka,Nobuyoshi Saito,Shushu ZHENG. Владелец: Kioxia Corp. Дата публикации: 2022-03-17.

Semiconductor substrate and semiconductor device fabrication method

Номер патента: US20060022196A1. Автор: Hiroshi Ohta,Sachie Tone,Masahiro Ninomiya. Владелец: Fujitsu Ltd. Дата публикации: 2006-02-02.

Method of manufacturing a semiconductor device and semiconductor device obtained by means of such a method

Номер патента: US20060128089A1. Автор: Viet Nguyen Hoang,Dirk Gravesteijn,Romano Julma Hoofman. Владелец: KONINKLIJKE PHILIPS ELECTRONICS NV. Дата публикации: 2006-06-15.

Wafer alignment for stacked wafers and semiconductor device assemblies

Номер патента: US20230065325A1. Автор: Eiichi Nakano,Shiro Uchiyama. Владелец: Micron Technology Inc. Дата публикации: 2023-03-02.

Storage system and semiconductor package with improved power supply efficiency

Номер патента: US20240242742A1. Автор: Dong Sop LEE. Владелец: SK hynix Inc. Дата публикации: 2024-07-18.

Semiconductor device and manufacturing method thereof

Номер патента: US20240266189A1. Автор: YONG Song,Doo Hyun Park,Eun Young Lee,Jong Sik Paek,Seong Min Seo,Pil Je Sung,Seo Yeon Ahn,Sung Geun Kang,Wang Gu Lee. Владелец: Amkor Technology Singapore Holding Pte Ltd. Дата публикации: 2024-08-08.

Methods of forming hydrophobic surfaces on semiconductor device structures, methods of forming semiconductor device structures, and semiconductor device structures

Номер патента: US20130292647A1. Автор: Prashant Raghu,Ian C. Laboriante. Владелец: Micron Technology Inc. Дата публикации: 2013-11-07.

Method of fabricating integrated structure for MEMS device and semiconductor device

Номер патента: US09988264B2. Автор: Wei-Cheng Wu,Min Chen,Bang-Chiang Lan,Chien-Hsin Huang,Hui-Min Wu,Tzung-I Su,Li-Hsun Ho. Владелец: United Microelectronics Corp. Дата публикации: 2018-06-05.

Semiconductor device and method of forming interposer frame electrically connected to embedded semiconductor die

Номер патента: US09966335B2. Автор: HeeJo Chi,NamJu Cho,HanGil Shin. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2018-05-08.

Semiconductor device and electronic apparatus of a cascode-coupled system

Номер патента: US09960153B2. Автор: Satoru Akiyama,Hiroyoshi Kobayashi,Hisao Inomata,Sei SAITOU. Владелец: Renesas Electronics Corp. Дата публикации: 2018-05-01.

Method of forming a semiconductor device and semiconductor device

Номер патента: US09954065B2. Автор: Anton Mauder,Hans-Joachim Schulze,Frank Pfirsch,Johannes Baumgartl,Ingo Muri,Iris Moder. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2018-04-24.

Manufacturing method of semiconductor device and semiconductor device

Номер патента: US09947553B2. Автор: Mamoru Yamagami,Yasuhiro Fuwa. Владелец: ROHM CO LTD. Дата публикации: 2018-04-17.

Semiconductor device and semiconductor memory device

Номер патента: US09917138B1. Автор: Yusuke Goki,Keiichi Takenaka. Владелец: Toshiba Memory Corp. Дата публикации: 2018-03-13.

Semiconductor device, manufacturing method thereof, and electronic device

Номер патента: US09871145B2. Автор: Daigo Ito,Shinya Sasagawa,Motomu Kurata,Yoshiaki Yamamoto,Takashi Hamada,Daisuke Matsubayashi,Yutaka Okazaki,Masaharu Nagai,Naoto Yamade. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2018-01-16.

Semiconductor device and semiconductor package

Номер патента: US09853023B2. Автор: Yukie Nishikawa,Yasuhiko Akaike,Kenya Kobayashi. Владелец: Toshiba Corp. Дата публикации: 2017-12-26.

Manufacturing method of semiconductor device and semiconductor device thereof

Номер патента: US09837376B2. Автор: Dong Jin Kim,Do Hyung Kim,Jin Han Kim,Glenn Rinne,Yeong Beom Ko. Владелец: Amkor Technology Inc. Дата публикации: 2017-12-05.

Semicondcutor structure and semiconductor manufacturing process thereof

Номер патента: US09837366B1. Автор: Chin-Yu Ku,Rung-De Wang,Wei-Lun Hsieh,Chen-Hsun Liu,Chia-Hua Wang,Pei-Shing Tsai,Jheng-Hong Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-12-05.

Semiconductor device, optical sensor device and semiconductor device manufacturing method

Номер патента: US09818895B2. Автор: Hiroshi Inada,Takashi Ishizuka,Hideaki Nakahata,Yasuhiro Iguchi,Katsushi Akita,Youichi Nagai,Kei Fujii. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2017-11-14.

Semiconductor device, manufacturing method thereof, and electronic device

Номер патента: US09691905B2. Автор: Daigo Ito,Shinya Sasagawa,Motomu Kurata,Yoshiaki Yamamoto,Takashi Hamada,Daisuke Matsubayashi,Yutaka Okazaki,Masaharu Nagai,Naoto Yamade. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2017-06-27.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: RU2678509C1. Автор: Акинори САКАКИБАРА. Владелец: Тойота Дзидося Кабусики Кайся. Дата публикации: 2019-01-29.

Method of manufacturing semiconductor device and semiconductor manufacturing apparatus

Номер патента: US8241515B2. Автор: Takayuki Izumi,Kazuhiko Ohmuro,Ryoji Shigemasa,Tomoyuki Ohshima. Владелец: Oki Semiconductor Co Ltd. Дата публикации: 2012-08-14.

P-Type Semiconductor Material and Semiconductor Device

Номер патента: US20130214271A1. Автор: Yoshinobu Asami,Riho KATAISHI,Erumu Kikuchi. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2013-08-22.

Manufacturing method of semiconductor device and semiconductor device

Номер патента: US20160197050A1. Автор: Toshihiko Akiba,Yuki YAGYU,Akihiro Tobita. Владелец: Renesas Electronics Corp. Дата публикации: 2016-07-07.

Method of forming a semiconductor device structure and semiconductor device structure

Номер патента: US20170317097A1. Автор: Frank Jakubowski,Juergen Faul. Владелец: Globalfoundries Inc. Дата публикации: 2017-11-02.

Method for making semiconductor device including a superlattice and providing reduced gate leakage

Номер патента: US20210391446A1. Автор: Hideki Takeuchi,Yung-Hsuan Yang. Владелец: Atomera Inc. Дата публикации: 2021-12-16.

Method of manufacturing semiconductor device and semiconductor device

Номер патента: US12034069B2. Автор: Shigeki Yoshida. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2024-07-09.

Integrated circuit device and semiconductor package including the same

Номер патента: US20240234254A9. Автор: Junho Huh,Bongwee YU. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-11.

Method of manufacturing semiconductor device and semiconductor manufacturing apparatus

Номер патента: US20080242103A1. Автор: Takayuki Izumi,Kazuhiko Ohmuro,Ryoji Shigemasa,Tomoyuki Ohshima. Владелец: Oki Electric Industry Co Ltd. Дата публикации: 2008-10-02.

Semiconductor light emitting device and semiconductor light emitting module

Номер патента: US20230335696A1. Автор: Koji Ichikawa,Naochika Horio,Keima Kono,Daizo KAMBARA. Владелец: Stanley Electric Co Ltd. Дата публикации: 2023-10-19.

Semiconductor device and semiconductor package

Номер патента: US20210384144A1. Автор: Seok-hyun Lee,Youn-ji MIN. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-12-09.

Method of manufacturing semiconductor device and semiconductor device

Номер патента: US9355890B2. Автор: Tetsuya Iida. Владелец: Renesas Electronics Corp. Дата публикации: 2016-05-31.

Method of manufacturing semiconductor device and semiconductor device

Номер патента: US20130207228A1. Автор: Tetsuya Iida. Владелец: Renesas Electronics Corp. Дата публикации: 2013-08-15.

Electronic device and semiconductor device

Номер патента: US9087160B2. Автор: Yasuhiro Yoshikawa,Motoo Suwa. Владелец: Renesas Electronics Corp. Дата публикации: 2015-07-21.

Electrostatic protection circuit and semiconductor device

Номер патента: US20240006408A1. Автор: Tsutomu Tomioka. Владелец: Ablic Inc. Дата публикации: 2024-01-04.

Three transistor semiconductor device with metal oxide channel region, operation method thereof, and electronic device

Номер патента: US11996132B2. Автор: Shunpei Yamazaki,Kiyoshi Kato,Tatsuya Onuki. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2024-05-28.

Semiconductor device comprising an excess resin portion, manufacturing method thereof, and apparatus for manufacturing semiconductor device comprising a excess resin portion

Номер патента: US20080029857A1. Автор: Yoshiharu Kaneda,Yoshikazu Takada,Toshinori Kiyohara. Владелец: NEC Electronics Corp. Дата публикации: 2008-02-07.

Semiconductor device and semiconductor memory device

Номер патента: US20240258401A1. Автор: Akira Takashima,Yasushi Nakasaki,Yusuke Nakajima,Tsunehiro Ino. Владелец: Kioxia Corp. Дата публикации: 2024-08-01.

Fabrication method for semiconductor device and semiconductor device

Номер патента: US9040410B2. Автор: XIN YANG. Владелец: CSMC Technologies Fab2 Co Ltd. Дата публикации: 2015-05-26.

Method for assembling a carrier and a semiconductor device

Номер патента: US20010007288A1. Автор: Jeffrey Coffin,Peter Brofman,Kathleen Stalter,Anson Call. Владелец: Individual. Дата публикации: 2001-07-12.

Semiconductor device and semiconductor module, and method of manufacturing semiconductor device

Номер патента: US20240105637A1. Автор: Akio Yamano,Yuta EBUKURO. Владелец: Fuji Electric Co Ltd. Дата публикации: 2024-03-28.

Semiconductor device and semiconductor circuit

Номер патента: US20210296476A1. Автор: Yoko Iwakaji,Tomoko Matsudai. Владелец: Toshiba Electronic Devices and Storage Corp. Дата публикации: 2021-09-23.

P-Type Semiconductor Material and Semiconductor Device

Номер патента: US20150001535A1. Автор: Yoshinobu Asami,Riho KATAISHI,Erumu Kikuchi. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2015-01-01.

Shallow trench isolation structure and semiconductor device with the same

Номер патента: US20210313422A1. Автор: Chao-Wei Lin,Huixian Lai,Yu Cheng Tung,Chiayi Chu. Владелец: Fujian Jinhua Integrated Circuit Co Ltd. Дата публикации: 2021-10-07.

Semiconductor light emitting device and semiconductor light emitting device assembly

Номер патента: US8035120B2. Автор: Yasushi Ito,Naoji Nada. Владелец: Sony Corp. Дата публикации: 2011-10-11.

Semiconductor device, method for manufacturing the same, and flexible substrate for mounting semiconductor

Номер патента: US20090134506A1. Автор: Masahiro Yamaguchi,Naoto Saito,Hisashi Tanie. Владелец: Elpida Memory Inc. Дата публикации: 2009-05-28.

Semiconductor device manufacturing system, semiconductor device inspection device, and semiconductor device manufacturing method

Номер патента: US12051629B2. Автор: Younghwan Kim,Youngsu Ryu,Seunghwa Hyun,Hwayoung Park,Yusang Cheon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-30.

Semiconductor device and semiconductor device production system

Номер патента: US20210118916A1. Автор: Hidekazu Miyairi,Shunpei Yamazaki,Hiroshi Shibata,Koichiro Tanaka,Akihisa Shimomura,Masahiko Hayakawa,Tatsuya Arao,Mai Akiba,Chiho Kokubo,Atsuo Isobe,Koji Dairiki. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2021-04-22.

Semiconductor device and semiconductor device production system

Номер патента: US20180190677A1. Автор: Hidekazu Miyairi,Shunpei Yamazaki,Hiroshi Shibata,Koichiro Tanaka,Akihisa Shimomura,Masahiko Hayakawa,Tatsuya Arao,Mai Akiba,Chiho Kokubo,Atsuo Isobe,Koji Dairiki. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2018-07-05.

Semiconductor element, electronic device comprising semiconductor element, and semiconductor chip

Номер патента: US20240222552A1. Автор: Hao-Chung Kuo,Tsau-Hua Hsieh,Chun-Hui Huang,Wei-Ta HUANG,Tzu-Yi Lee. Владелец: Innolux Corp. Дата публикации: 2024-07-04.

Methods of preparing layouts for semiconductor devices, photomasks formed using the layouts, and semiconductor devices fabricated using the photomasks

Номер патента: US20150261905A1. Автор: HongSoo KIM,Juyeon Lee,HunKook LEE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2015-09-17.

Holder manufacturing method for loading substrate of semiconductor manufacturing device, batch type boat having holder, loading/unloading method of semiconductor substrate using the same, and semiconductor manufacturing device having the same

Номер патента: US20060239799A1. Автор: Byoung Lee,Taek Jang. Владелец: Individual. Дата публикации: 2006-10-26.

Semiconductor light emitting device and semiconductor light emitting package

Номер патента: US11735694B2. Автор: Sungjoon Kim,Sanghyun Kim,Jae-Yoon Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-08-22.

Semiconductor device and semiconductor component including the same preliminary class

Номер патента: US12051767B2. Автор: Shih-Chang Lee,Yi-Ching Lee,Chia-hung Lin,Kuo-Feng Huang,Cheng-Long Yeh,Shih-Hao Cheng,Cheng-Hsing Chiang,Yen-Chun Tseng,Ming-Ta Chin,Shih-Nan Yen,Jui-Che Sung. Владелец: Epistar Corp. Дата публикации: 2024-07-30.

Semiconductor device and method of manufacturing the same and semiconductor manufacturing device

Номер патента: US8815652B2. Автор: Fumihiko Inoue,Kentaro Sera. Владелец: SPANSION LLC. Дата публикации: 2014-08-26.

Semiconductor device and semiconductor device production system

Номер патента: US20200135770A1. Автор: Hidekazu Miyairi,Shunpei Yamazaki,Hiroshi Shibata,Koichiro Tanaka,Akihisa Shimomura,Masahiko Hayakawa,Tatsuya Arao,Mai Akiba,Chiho Kokubo,Atsuo Isobe,Koji Dairiki. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2020-04-30.

Fabrication Method For Semiconductor Device And Semiconductor Device

Номер патента: US20140145354A1. Автор: XIN YANG. Владелец: CSMC Technologies Fab2 Co Ltd. Дата публикации: 2014-05-29.

High throughput epitaxial liftoff for releasing multiple semiconductor device layers from a single base substrate

Номер патента: US20130295750A1. Автор: Ning Li,Cheng-Wei Cheng,Kuen-Ting Shiu. Владелец: International Business Machines Corp. Дата публикации: 2013-11-07.

Semiconductor device and semiconductor device production system

Номер патента: US20160111451A1. Автор: Hidekazu Miyairi,Shunpei Yamazaki,Hiroshi Shibata,Koichiro Tanaka,Akihisa Shimomura,Masahiko Hayakawa,Tatsuya Arao,Mai Akiba,Chiho Kokubo,Atsuo Isobe,Koji Dairiki. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2016-04-21.

Semiconductor device and semiconductor device package having an electrode recess with a different inclination angle than an inclination angle of an electrode in the recess

Номер патента: US11749778B2. Автор: Sung Min Hwang,June O Song,Chang Man LIM,Se Yeon Jung,Tae Sung Lee,Byung Yeon CHOI,Chang Hyeong LEE. Владелец: Suzhou Lekin Semiconductor Co Ltd. Дата публикации: 2023-09-05.

Semiconductor device and process for production thereof

Номер патента: US20050179054A1. Автор: Takayuki Toyama. Владелец: Sony Corp. Дата публикации: 2005-08-18.

Method of manufacturing a semiconductor device and semiconductor device obtained by using such a method

Номер патента: WO2004070831A1. Автор: Yukiko Furukawa. Владелец: Interuniversitair Microelektronica Centrum Vzw,. Дата публикации: 2004-08-19.

Semiconductor device manufacturing method and semiconductor device

Номер патента: US9013048B2. Автор: Norio Kainuma. Владелец: Fujitsu Ltd. Дата публикации: 2015-04-21.

Semiconductor device manufacturing method and semiconductor device

Номер патента: US20140339713A1. Автор: Norio Kainuma. Владелец: Fujitsu Ltd. Дата публикации: 2014-11-20.

Semiconductor device fabrication method and semiconductor device

Номер патента: US20120306068A1. Автор: Hirokazu Saito. Владелец: Lapis Semiconductor Co Ltd. Дата публикации: 2012-12-06.

Method for manufacturing semiconductor device, and semiconductor device

Номер патента: US9893108B2. Автор: Toshifumi Iwasaki. Владелец: Renesas Electronics Corp. Дата публикации: 2018-02-13.

Semiconductor device including p-channel type transistor, and production method for manufacturing such semiconductor device

Номер патента: US7033918B2. Автор: Naohiko Kimizuka,Ichiro Yamamoto. Владелец: NEC Electronics Corp. Дата публикации: 2006-04-25.

Gap-fill layers, methods of forming the same, and semiconductor devices manufactured by the methods of forming the same

Номер патента: US20200075398A1. Автор: Gihwan KIM,Hyo-Jung Kim,Geunwon LIM,Miso SHIN,Chungki MIN,Sanghyeok KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-03-05.

Gap-fill layers, methods of forming the same, and semiconductor devices manufactured by the methods of forming the same

Номер патента: US20220139766A1. Автор: Gihwan KIM,Hyo-Jung Kim,Geunwon LIM,Miso SHIN,Chungki MIN,Sanghyeok KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-05-05.

Semiconductor device including p-channel type transistor, and production method for manufacturing such semiconductor device

Номер патента: US20040155265A1. Автор: Naohiko Kimizuka,Ichiro Yamamoto. Владелец: NEC Electronics Corp. Дата публикации: 2004-08-12.

Semiconductor device and semiconductor chip

Номер патента: US20060097808A1. Автор: Kazuya Kawamura. Владелец: NEC Electronics Corp. Дата публикации: 2006-05-11.

Method of manufacturing semiconductor device and semiconductor device

Номер патента: US20080272444A1. Автор: Hiroyuki Kitamura. Владелец: Elpida Memory Inc. Дата публикации: 2008-11-06.

Semiconductor device and temperature measurement method

Номер патента: US20220244111A1. Автор: Shinichi Masuda. Владелец: Fuji Electric Co Ltd. Дата публикации: 2022-08-04.

Semiconductor device and method of fabricating the same

Номер патента: US20240113160A1. Автор: Jeehoon HAN,Jae-Bok Baek,Kyeonghoon Park,Juseong MIN,Donghyuck Jang,Taeyoon HONG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-04-04.

Semiconductor device

Номер патента: US12100688B2. Автор: Akihiro Kimura,Kaito Inoue. Владелец: ROHM CO LTD. Дата публикации: 2024-09-24.

Method for manufacturing semiconductor device and semiconductor device

Номер патента: US20170077040A1. Автор: Takeshi Watanabe,Yuusuke Takano. Владелец: Toshiba Corp. Дата публикации: 2017-03-16.

Method for producing a semiconductor device and semiconductor device

Номер патента: WO2024170052A1. Автор: Yulieth Cristina Arango,Giovanni ALFIERI,Gianpaolo Romano. Владелец: Hitachi Energy Ltd. Дата публикации: 2024-08-22.

Memory device and semiconductor device comprising electrostatic discharge protection element

Номер патента: US12087702B2. Автор: Chun-Lu LEE. Владелец: Nanya Technology Corp. Дата публикации: 2024-09-10.

Semiconductor device and semiconductor memory device

Номер патента: US20240321995A1. Автор: Shosuke Fujii,Masayuki Tanaka,Kazuhiro Matsuo,Kota Takahashi,Masaya Toda,Wakako Moriyama,Shoichi Kabuyanagi,Kenichiro TORATANI. Владелец: Kioxia Corp. Дата публикации: 2024-09-26.

Semiconductor device

Номер патента: US20240355713A1. Автор: Yushi Sato. Владелец: Fuji Electric Co Ltd. Дата публикации: 2024-10-24.

Method of manufacturing semiconductor devices, corresponding substrate and semiconductor device

Номер патента: EP4451327A1. Автор: Mauro Mazzola. Владелец: STMicroelectronics International NV. Дата публикации: 2024-10-23.

Electronics arrangement and semiconductor switching device having the electronics arrangement

Номер патента: US20240334641A1. Автор: Nina Müller,Matthias Eisner. Владелец: SIEMENS AG. Дата публикации: 2024-10-03.

Sonos structure, manufacturing method thereof and semiconductor with the same structure

Номер патента: US20130313628A1. Автор: Zhi Tian. Владелец: Shanghai Huali Microelectronics Corp. Дата публикации: 2013-11-28.

Semiconductor device and semiconductor package comprising the same

Номер патента: US09966317B2. Автор: Jong-Hyun Choi,Joung-yeal Kim,Mi-Young Woo,Dae-Hyun KWON,Joon-Sun YOON. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-05-08.

Semiconductor device

Номер патента: US09905494B2. Автор: Shin Soyano. Владелец: Fuji Electric Co Ltd. Дата публикации: 2018-02-27.

Semiconductor device and semiconductor device production system

Номер патента: US09899419B2. Автор: Hidekazu Miyairi,Shunpei Yamazaki,Hiroshi Shibata,Koichiro Tanaka,Akihisa Shimomura,Masahiko Hayakawa,Tatsuya Arao,Mai Akiba,Chiho Kokubo,Atsuo Isobe,Koji Dairiki. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2018-02-20.

Method for manufacturing semiconductor device, and semiconductor device

Номер патента: US09893108B2. Автор: Toshifumi Iwasaki. Владелец: Renesas Electronics Corp. Дата публикации: 2018-02-13.

Semiconductor device and method of forming vertical interconnect in FO-WLCSP using leadframe disposed between semiconductor die

Номер патента: US09842808B2. Автор: HeeJo Chi,NamJu Cho,HanGil Shin. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2017-12-12.

Semiconductor film and semiconductor device

Номер патента: US09829533B2. Автор: Ryosuke Watanabe,Masashi TSUBUKU. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2017-11-28.

Semiconductor device and method of forming build-up interconnect structures over a temporary substrate

Номер патента: US09818734B2. Автор: KANG Chen,Yaojian Lin. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2017-11-14.

Wiring board, semiconductor package, and semiconductor device

Номер патента: US09780043B2. Автор: Noriyoshi Shimizu,Wataru KANEDA. Владелец: Shinko Electric Industries Co Ltd. Дата публикации: 2017-10-03.

Semiconductor device and method of forming conductive vias by direct via reveal with organic passivation

Номер патента: US09768066B2. Автор: XING Zhao,Duk Ju Na,Lai Yee Chia. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2017-09-19.

Organic semiconductor element, fabrication method thereof, woven and non-woven fabric structures therewith, and semiconductor device therewith

Номер патента: US09733209B2. Автор: Kang Eun LEE,Young Seok Oh,Jea Uk Lee,Moon Kwang Um,Dong Gi Seong,Byung Mun JUNG,Won Oh Lee. Владелец: Korea Institute of Machinery and Materials KIMM. Дата публикации: 2017-08-15.

Semiconductor devices with enhanced deterministic doping and related methods

Номер патента: US09716147B2. Автор: Robert J. Mears. Владелец: Atomera Inc. Дата публикации: 2017-07-25.

Semiconductor light emitting device and semiconductor light emitting apparatus including the same

Номер патента: US09653515B2. Автор: Ju Heon YOON,Myeong Ha KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-05-16.

Semiconductor substrate, process for production thereof, and semiconductor device

Номер патента: US5858855A. Автор: Kenya Kobayashi. Владелец: NEC Corp. Дата публикации: 1999-01-12.

Semiconductor devices and semiconductor packages including the same

Номер патента: US20230275052A1. Автор: ATSUSHI Fujisaki,JONGHO LEE,Jin Ho An,Un-Byoung Kang,Ju-Il Choi,Jeonggi Jin. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-08-31.

Neuromorphic circuit having 3d stacked structure and semiconductor device having the same

Номер патента: SG10201900011WA. Автор: YU Hak-soo,O Seong-Il,CHOI Min-Su,CHO WOO-YEONG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-11-28.

Semiconductor device and semiconductor module

Номер патента: EP4207257A1. Автор: Hayato Nakano. Владелец: Fuji Electric Co Ltd. Дата публикации: 2023-07-05.

Semiconductor device and semiconductor circuit

Номер патента: US20210091072A1. Автор: Yoko Iwakaji,Tomoko Matsudai. Владелец: Toshiba Electronic Devices and Storage Corp. Дата публикации: 2021-03-25.

Method of manufacturing semiconductor device, and semiconductor device

Номер патента: US20090051020A1. Автор: Masaru Koyanagi,Takashi Taira. Владелец: Toshiba Corp. Дата публикации: 2009-02-26.

Semiconductor device and semiconductor module

Номер патента: US20230223441A1. Автор: Hayato Nakano. Владелец: Fuji Electric Co Ltd. Дата публикации: 2023-07-13.

Drive device and semiconductor module

Номер патента: US11923851B2. Автор: Tomoko Matsudai,Tatsunori Sakano,Ryohei GEJO. Владелец: Toshiba Electronic Devices and Storage Corp. Дата публикации: 2024-03-05.

Oxide semiconductor film, transistor, and semiconductor device

Номер патента: US20140097428A1. Автор: Shunpei Yamazaki,Masahiro Takahashi. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2014-04-10.

Semiconductor devices including bit line contact plug and buried channel array transistor, methods of fabricating the same, and semiconductor modules, electronic circuit boards and electronic systems including the same

Номер патента: US20110241102A1. Автор: Jin-Young Kim,Nam-Gun Kim,Sung-il Cho,Bong-Soo Kim,Hyun-Chul Yoon,Kwan-Sik Cho. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2011-10-06.

Thin film structure, semiconductor device including the same, and semiconductor apparatus including semiconductor device

Номер патента: US20220393016A1. Автор: Jinseong Heo,Sanghyun JO,Dukhyun CHOE,Taehwan MOON. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-12-08.

Semiconductor Component and Semiconductor Package

Номер патента: US20200273788A1. Автор: Gerhard Noebauer,Ashita Mirchandani. Владелец: Infineon Technologies North America Corp. Дата публикации: 2020-08-27.

Semiconductor device and semiconductor device manufacturing method

Номер патента: US20210175334A1. Автор: Shunpei Yamazaki,Shinya Sasagawa,Ryo Arasawa,Erika TAKAHASHI,Katsuaki TOCHIBAYASHI. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2021-06-10.

Semiconductor device, and semiconductor chip properties

Номер патента: US20170213795A1. Автор: Dong Wang,Akihisa Yamamoto,Kazuya Hokazono. Владелец: Mitsubishi Electric Corp. Дата публикации: 2017-07-27.

Semiconductor device and semiconductor device manufacturing method

Номер патента: US20180047840A1. Автор: Norikazu Nakamura,Junji Kotani. Владелец: Fujitsu Ltd. Дата публикации: 2018-02-15.

Semiconductor device

Номер патента: US20190295988A1. Автор: Masaru Koyanagi,Mikihiko Ito,Kazushige Kawasaki,Satoshi Tsukiyama. Владелец: Toshiba Memory Corp. Дата публикации: 2019-09-26.

Production Method of Semiconductor Device and Semiconductor Device

Номер патента: US20090283773A1. Автор: Takuto Yasumatsu. Владелец: Individual. Дата публикации: 2009-11-19.

Manufacturing method for semiconductor device, semiconductor device, and semiconductor apparatus

Номер патента: US20240234631A9. Автор: Yoshinobu Kawaguchi,Takeshi Kamikawa,Kentaro Murakawa. Владелец: Kyocera Corp. Дата публикации: 2024-07-11.

Semiconductor device and semiconductor device manufacturing method

Номер патента: US20160211385A1. Автор: Shoji Kitamura. Владелец: Fuji Electric Co Ltd. Дата публикации: 2016-07-21.

Lead frame of semiconductor device, integrated-type lead frame of semiconductor device, and semiconductor device

Номер патента: US20230317572A1. Автор: Shogo Shibata,Kazufumi Oki,Shuhei Yokoyama. Владелец: Mitsubishi Electric Corp. Дата публикации: 2023-10-05.

Semiconductor device and method for forming the same

Номер патента: US12016174B2. Автор: Min-Teng Chen. Владелец: Fujian Jinhua Integrated Circuit Co Ltd. Дата публикации: 2024-06-18.

Conductive hardening resin for a semiconductor device and semiconductor device using the same

Номер патента: US20030214032A1. Автор: Akira Fukuizumi,Kazuto Oonami. Владелец: Sumitomo Bakelite Co Ltd. Дата публикации: 2003-11-20.

Semiconductor device and semiconductor package

Номер патента: EP4044254A3. Автор: Yasutaka Nakashiba,Masami Sawada,Akihiro Shimomura. Владелец: Renesas Electronics Corp. Дата публикации: 2022-10-26.

Method of fabricating capacitor in semiconductor device and semiconductor device using the same

Номер патента: US20050287758A1. Автор: Jea Kim. Владелец: DongbuAnam Semiconductor Inc. Дата публикации: 2005-12-29.

Semiconductor device manufacturing method and semiconductor device

Номер патента: US20220293581A1. Автор: Hideo Numata. Владелец: Kioxia Corp. Дата публикации: 2022-09-15.

Semiconductor device, method for manufacturing the same, and semiconductor device mounting structure

Номер патента: US20080136017A1. Автор: Yoshifumi Nakamura,Michinari Tetani,Yukihiro Kozaka. Владелец: Matsushita Electric Industrial Co Ltd. Дата публикации: 2008-06-12.

Method of manufacturing semiconductor chip and semiconductor module

Номер патента: US20100075444A1. Автор: Majumdar Gourab,Kiyoshi Arai. Владелец: Mitsubishi Electric Corp. Дата публикации: 2010-03-25.

Device mounting board and semiconductor module

Номер патента: US20110100696A1. Автор: Kiyoshi Shibata,Takanori Hayashi,Masayuki Nagamatsu. Владелец: Sanyo Electric Co Ltd. Дата публикации: 2011-05-05.

Method of manufacturing semiconductor devices and semiconductor devices

Номер патента: US12040381B2. Автор: Cheng-Yi Peng,Bor-Zen Tien,Wen-Yuan Chen,Wen-Hsing Hsieh,Jon-Hsu Ho,Song-Bor Lee,Yi-Ju Hsu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-16.

Method for manufacturing semiconductor device, and semiconductor device

Номер патента: US20160247682A1. Автор: Susumu Harada. Владелец: Nichia Corp. Дата публикации: 2016-08-25.

Semiconductor wafer, clip and semiconductor device

Номер патента: US20230411336A1. Автор: Roland Rupp,Carsten Von Koblinski,Matteo Piccin,Chiew Li Tai,Daniel PEDONE,Jia Yi WONG. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2023-12-21.

Method of manufacturing a semiconductor device, in which a high-breakdown-voltage mos transistor and a low-breakdown-voltage mos transistor are formed on an identical semiconductor substrate and semiconductor device manufactured thereby

Номер патента: US6916714B2. Автор: Atsushi Kanda,Yasushi Haga. Владелец: Seiko Epson Corp. Дата публикации: 2005-07-12.

Semiconductor device and fabricating method thereof

Номер патента: US20240194594A1. Автор: Min-Teng Chen. Владелец: Fujian Jinhua Integrated Circuit Co Ltd. Дата публикации: 2024-06-13.

Semiconductor device and semiconductor device fabrication method

Номер патента: US7161222B2. Автор: Motoki Kobayashi,Fumio Ichikawa. Владелец: Oki Electric Industry Co Ltd. Дата публикации: 2007-01-09.

Integration of boron arsenide into power devices and semiconductors for thermal management

Номер патента: EP4315407A1. Автор: Yongjie HU. Владелец: UNIVERSITY OF CALIFORNIA. Дата публикации: 2024-02-07.

Method for producing a package for a semiconductor chip, package for a semiconductor chip and semiconductor device

Номер патента: WO2023083461A1. Автор: Mohd Fauzi ZAINORDIN,Mazwan MANSOR,Ismail ITHNAIN. Владелец: Ams-Osram International Gmbh. Дата публикации: 2023-05-19.

Semiconductor device and method

Номер патента: US20240170536A1. Автор: Hsin-Yi Lee,Chi On Chui,Ji-Cheng Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-05-23.

Method of manufacturing semiconductor devices and semiconductor devices

Номер патента: US20230274938A1. Автор: Chi On Chui,Da-Yuan Lee,Shu-Han Chen,Tsung-Ju CHEN,Hao-Ming Tang,Yun-San Chien,Yi-Hsin Ting,Han-Shen WANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-08-31.

Semiconductor light emitting device and semiconductor light emitting module

Номер патента: EP4203082A1. Автор: Koji Ichikawa,Naochika Horio,Keima Kono,Daizo KAMBARA. Владелец: Stanley Electric Co Ltd. Дата публикации: 2023-06-28.

Semiconductor structure, method for manufacturing semiconductor structure, and semiconductor device

Номер патента: US20240057351A1. Автор: Ling-Yi Chuang,Kaimin Lv. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-02-15.

Method for manufacturing semiconductor device and semiconductor device

Номер патента: US20230352317A1. Автор: Ling-Yi Chuang. Владелец: Individual. Дата публикации: 2023-11-02.

Method for producing semiconductor apparatus and semiconductor apparatus

Номер патента: US20230230926A1. Автор: Hiroshi Takeno,Tsuyoshi Ohtsuki. Владелец: Shin Etsu Handotai Co Ltd. Дата публикации: 2023-07-20.

Thermally conductive sheet and semiconductor device

Номер патента: US20170011986A1. Автор: Kazuya Kitagawa,Shunsuke Mochizuki,Yoji Shirato,Kazuya Hirasawa,Motomi Kurokawa,Mika Tsuda,Keita Nagahashi,Satoshi Maji. Владелец: Sumitomo Bakelite Co Ltd. Дата публикации: 2017-01-12.

Method of contact formation between metal and semiconductor

Номер патента: EP3513427A1. Автор: Hua Chung,Yi-Chiau Huang,Xuebin Li. Владелец: Applied Materials Inc. Дата публикации: 2019-07-24.

Method of manufacturing semiconductor devices, corresponding substrate and semiconductor device

Номер патента: EP4383318A1. Автор: Mauro Mazzola. Владелец: STMicroelectronics International NV. Дата публикации: 2024-06-12.

Method of forming a semiconductor device structure and semiconductor device structure

Номер патента: US20170250191A1. Автор: Frank Jakubowski,Juergen Faul. Владелец: Globalfoundries Inc. Дата публикации: 2017-08-31.

Doped polar layers and semiconductor device incorporating same

Номер патента: US11757043B2. Автор: Ramesh Ramamoorthy,Sasikanth Manipatruni,Gaurav Thareja. Владелец: Kepler Computing Inc. Дата публикации: 2023-09-12.

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Номер патента: US20240203832A1. Автор: Koji Watanabe,Tetsu Ohtou,Tomonari Yamamoto. Владелец: Tokyo Electron Ltd. Дата публикации: 2024-06-20.

Method of manufacturing semiconductor devices, corresponding substrate and semiconductor device

Номер патента: US20230005825A1. Автор: Mauro Mazzola. Владелец: STMICROELECTRONICS SRL. Дата публикации: 2023-01-05.

Semiconductor device manufacturing method and semiconductor device

Номер патента: US20180102310A1. Автор: Toshitsugu Ishii,Hidekazu Iwasaki,Jun MATSUHASHI,Naohiro Makihira. Владелец: Renesas Electronics Corp. Дата публикации: 2018-04-12.

Method of manufacturing a semiconductor device and semiconductor wafer

Номер патента: US20200381256A1. Автор: Roland Rupp,Hans-Joachim Schulze,Francisco Javier Santos Rodriguez. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2020-12-03.

Method of forming pn junction including transition metal dichalcogenide, method of fabricating semiconductor device using the same, and semiconductor device fabricated by the same

Номер патента: US20230245887A1. Автор: Jin-Hong Park,Jin-Hyuk Kim,Sang-Yong Park,Sejin KYUNG. Владелец: Sungkyunkwan University Research and Business Foundation. Дата публикации: 2023-08-03.

Method of fabricating semiconductor light-emitting device and semiconductor light-emitting device

Номер патента: US20200169058A1. Автор: Hitoshi Sato,Kazuya Yamada,Hiroki Nagai. Владелец: Panasonic Semiconductor Solutions Co Ltd. Дата публикации: 2020-05-28.

Method of manufacturing semiconductor device, and semiconductor device manufactured thereby

Номер патента: US20020001959A1. Автор: Yasuo Nakatani. Владелец: Mitsubishi Electric Corp. Дата публикации: 2002-01-03.

Contact forming method, semiconductor device manufacturing method, and semiconductor device

Номер патента: US20110073922A1. Автор: Tadahiro Ohmi,Hiroaki Tanaka,Akinobu Teramoto,Tatsunori Isogai. Владелец: Individual. Дата публикации: 2011-03-31.

Board for mounting BGA semiconductor chip thereon, semiconductor device, and methods of fabricating such board and semiconductor device

Номер патента: US20050156326A1. Автор: Toshihide Ito. Владелец: NEC Toppan Circuit Solutions Inc. Дата публикации: 2005-07-21.

Semiconductor device manufacturing method and semiconductor wafer

Номер патента: US20170186725A1. Автор: Takehiro Oura,Yuichi Ota,Kohei Yoshida,Kentaro Kita. Владелец: Renesas Electronics Corp. Дата публикации: 2017-06-29.

Method for manufacturing semiconductor device and semiconductor device

Номер патента: US20170025321A1. Автор: Takeshi Watanabe,Masaya Shima,Soichi Homma,Yuusuke Takano,Katsunori Shibuya. Владелец: Toshiba Corp. Дата публикации: 2017-01-26.

Manufacturing method of semiconductor device and semiconductor device

Номер патента: US7867890B2. Автор: Masaru Seto. Владелец: Oki Semiconductor Co Ltd. Дата публикации: 2011-01-11.

Method for manufacturing semiconductor device

Номер патента: US20130017671A1. Автор: Hiroyuki Kitabayashi,Taku Horii. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2013-01-17.

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Номер патента: US20200098620A1. Автор: Woojin Lee,Sanghoon Ahn,Kyu-hee Han,Hoon Seok SEO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-03-26.

Semiconductor device including light shieled structures

Номер патента: US7126175B2. Автор: Susumu Inoue,Yutaka Maruo,Yo Takeda. Владелец: Seiko Epson Corp. Дата публикации: 2006-10-24.

Method of forming a semiconductor device with a multi-layer WSix film with small grain size structure, and a semiconductor device having a polysilicon layer with a multi-layer WSix film formed thereon

Номер патента: US20030100184A1. Автор: Hsiao-Che Wu. Владелец: Individual. Дата публикации: 2003-05-29.

Low dielectric constant material having thermal resistance, insulation film between semiconductor layers using the same, and semiconductor device

Номер патента: US20060091382A1. Автор: Noboru Mikami,Sei Tsunoda,Hideharu Nobutoki. Владелец: Mitsubishi Electric Corp. Дата публикации: 2006-05-04.

Semiconductor device fabrication method and semiconductor device fabricated thereby

Номер патента: US20080203440A1. Автор: Masakatsu Tsuchiaki. Владелец: Individual. Дата публикации: 2008-08-28.

Information acquiring method, information acquiring apparatus, semiconductor device comprising array of plurality of unit components for detecting physical quantity distribution, and semiconductor manufacturing method

Номер патента: US20090317935A1. Автор: Atsushi Toda,Hirofumi Sumi. Владелец: Sony Corp. Дата публикации: 2009-12-24.

Semiconductor memory device, method for fabricating semiconductor memory device, semiconductor integrated circuit and semiconductor memory integrated circuit

Номер патента: US20230209817A1. Автор: Kenichiro Kusano. Владелец: Lapis Semiconductor Co Ltd. Дата публикации: 2023-06-29.

Semiconductor device and semiconductor memory device

Номер патента: US12089395B2. Автор: Tomomasa Ueda,Yuta Sato,Keiji Ikeda,Nobuyoshi Saito. Владелец: Kioxia Corp. Дата публикации: 2024-09-10.

Method of manufacturing semiconductor devices and semiconductor devices

Номер патента: US20240322011A1. Автор: Cheng-Yi Peng,Bor-Zen Tien,Wen-Yuan Chen,Wen-Hsing Hsieh,Jon-Hsu Ho,Song-Bor Lee,Yi-Ju Hsu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-26.

Semiconductor device manufacturing method and semiconductor device

Номер патента: US9070696B2. Автор: Masahiro Kikuchi,Kazunaga Onishi,Rikihiro Maruyama,Masafumi TEZUKA. Владелец: Fuji Electric Co Ltd. Дата публикации: 2015-06-30.

Semiconductor devices and package substrates having pillars and semiconductor packages and package stack structures having the same

Номер патента: US20160049377A1. Автор: Tae-Hyeong Kim,Tae-Je Cho,Sun-Kyoung SEO,Ji-Hwang KIM,Yeong-kwon Ko. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-02-18.

Semiconductor material, preparation method, and semiconductor device

Номер патента: EP4439639A1. Автор: Qi Zhang,Kun Ma,Chaoyang Luo,Yuhang Zhang,Yanjun Wang,Chenguang Sun,Qianzhi MA,Zuying YAO,Qiwang Wei,Haiyun GU,Zhicai LI. Владелец: Zhonghuan Advanced Semiconductor Technology Co Ltd. Дата публикации: 2024-10-02.

Methods for manufacturing semiconductor devices, and semiconductor devices

Номер патента: US12114483B2. Автор: Dandan He. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-10-08.

Semiconductor device and semiconductor component including the same

Номер патента: US12125956B2. Автор: Shih-Chang Lee,Yi-Ming Chen,Chun-Wei Chang,Chung-Hao Wang,Yu-Tsu Lee,Wei-Jen Hsueh,Yi-Yang Chiu,Min-Hao YANG. Владелец: Epistar Corp. Дата публикации: 2024-10-22.

Semiconductor device and method of manufacturing semiconductor device

Номер патента: US20240371993A1. Автор: Takeyoshi Nishimura. Владелец: Fuji Electric Co Ltd. Дата публикации: 2024-11-07.

Semiconductor memory device and semiconductor memory array comprising the same

Номер патента: US09991266B2. Автор: Zhibiao Zhou,Ding-Lung Chen. Владелец: United Microelectronics Corp. Дата публикации: 2018-06-05.

Semiconductor device and semiconductor device manufacturing method

Номер патента: US09911705B2. Автор: Masayoshi Tarutani,Yosuke Nakata. Владелец: Mitsubishi Electric Corp. Дата публикации: 2018-03-06.

Semiconductor devices, methods of manufacture thereof, and methods of singulating semiconductor devices

Номер патента: US09887134B2. Автор: Kong-Beng Thei,Cheng-Yuan Tsai,Yao-Wen Chang,Jian-Shiou Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-02-06.

Method for separating epitaxial layers from growth substrates, and semiconductor device using same

Номер патента: US09882085B2. Автор: Ki Bum Nam,Joo Won Choi,A Ram Cha LEE,Yu Dae Han,Jeong Hun HEO,Choong Min Lee,Su Jin Shin. Владелец: Seoul Viosys Co Ltd. Дата публикации: 2018-01-30.

Semiconductor device and semiconductor-device manufacturing method

Номер патента: US09865639B2. Автор: Kan Shimizu,Keishi Inoue. Владелец: Sony Corp. Дата публикации: 2018-01-09.

Method for manufacturing semiconductor device and semiconductor device

Номер патента: US09842869B2. Автор: Masatoshi Kimura. Владелец: Renesas Electronics Corp. Дата публикации: 2017-12-12.

Semiconductor device and method of forming insulating layer in notches around conductive TSV for stress relief

Номер патента: US09837336B2. Автор: Chang Bum Yong,Won Kyoung Choi,Jae Hun Ku. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2017-12-05.

Method of fabricating semiconductor device and semiconductor device fabricated thereby

Номер патента: US09831251B2. Автор: Jun Tan,Jian Zhong,Qiuming Huang,Jianqin Gao. Владелец: Shanghai Huali Microelectronics Corp. Дата публикации: 2017-11-28.

Manufacturing method of semiconductor device and semiconductor manufacturing apparatus

Номер патента: US09818627B2. Автор: Yoshihiro Ogawa,Shinsuke Kimura. Владелец: Toshiba Memory Corp. Дата публикации: 2017-11-14.

Semiconductor devices including conductive features with capping layers and methods of forming the same

Номер патента: US09812390B2. Автор: Mei-Ling Chen,Keng-Chu Lin,Joung-Wei Liou,Hui-Chun Yang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-11-07.

Semiconductor device manufacturing method and semiconductor wafer

Номер патента: US09786630B2. Автор: Takehiro Oura,Yuichi Ota,Kohei Yoshida,Kentaro Kita. Владелец: Renesas Electronics Corp. Дата публикации: 2017-10-10.

Methods for fabricating a semiconductor device and semiconductor devices fabricated by the same

Номер патента: US09761603B2. Автор: Jae-Hwang Sim,Joon-Sung LIM,Min-Sung Song. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-09-12.

Method of forming a semiconductor device structure and semiconductor device structure

Номер патента: US09748259B1. Автор: Frank Jakubowski,Juergen Faul. Владелец: Globalfoundries Inc. Дата публикации: 2017-08-29.

Semiconductor device and semiconductor device manufacturing method

Номер патента: US09735110B2. Автор: Ryosuke Nakagawa,Yuichi Nakao. Владелец: ROHM CO LTD. Дата публикации: 2017-08-15.

Epoxy resin composition for encapsulating semiconductor device and semiconductor device encapsulated by the same

Номер патента: US09735076B2. Автор: So Yoon KIM,Yoon Man LEE. Владелец: Samsung SDI Co Ltd. Дата публикации: 2017-08-15.

Chip-scale package and semiconductor device assembly

Номер патента: US09728935B2. Автор: Jihua Du,Jay A. Skidmore,Vincent V. Wong,Kong Weng Lee. Владелец: Lumentum Operations LLC. Дата публикации: 2017-08-08.

Co-fabricated bulk devices and semiconductor-on-insulator devices

Номер патента: US09691787B2. Автор: Hui Zang,Bingwu Liu. Владелец: Globalfoundries Inc. Дата публикации: 2017-06-27.

CLOCK GENERATION CIRCUIT HAVING DESKEW FUNCTION AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE INCLUDING SAME

Номер патента: US20170117886A1. Автор: Lee Jae Gon,SONG JIN OOK,PARK BONG IL. Владелец: . Дата публикации: 2017-04-27.

CLOCK GENERATION CIRCUIT HAVING DESKEW FUNCTION AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE INCLUDING SAME

Номер патента: US20190245529A1. Автор: Lee Jae Gon,SONG JIN OOK,PARK BONG IL. Владелец: . Дата публикации: 2019-08-08.

Physical Unclonable Function Device and Operation Method Thereof, and Electronic Device

Номер патента: US20240171411A1. Автор: Xiangye Wei. Владелец: Beijing BOE Technology Development Co Ltd. Дата публикации: 2024-05-23.

OSCILLATION CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE INCLUDING THE SAME

Номер патента: US20150244318A1. Автор: SAITO Junichi,Nakao Kimihiro. Владелец: . Дата публикации: 2015-08-27.

Switching device and semiconductor integrated circuit device including the same

Номер патента: US8461904B2. Автор: Taewhan Kim,Tak-Yung Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2013-06-11.

Thin film magnetic memory device and semiconductor integrated circuit device including the same as one of circuit blocks

Номер патента: TW594732B. Автор: Tsukasa Ooishi. Владелец: Renesas Tech Corp. Дата публикации: 2004-06-21.

Thin film magnetic memory device and semiconductor integrated circuit device including the same as one of circuit blocks

Номер патента: US20060002216A1. Автор: Tsukasa Ooishi. Владелец: Renesas Technology Corp. Дата публикации: 2006-01-05.

Thin film magnetic memory device and semiconductor integrated circuit device including the same as one of circuit blocks

Номер патента: TW200404286A. Автор: Tsukasa Ooishi. Владелец: Renesas Tech Corp. Дата публикации: 2004-03-16.

Oscillation circuit and semiconductor integrated circuit device including the same

Номер патента: US20150244318A1. Автор: Junichi Saito,Kimihiro Nakao. Владелец: Alps Electric Co Ltd. Дата публикации: 2015-08-27.

Imaging device and imaging method thereof, and printer

Номер патента: EP4361730A1. Автор: Zengxiang Lu. Владелец: Faith Billion Technology Development Ltd. Дата публикации: 2024-05-01.

ENCODER GENERATING DATA PACKET, OPERATION METHOD THEREOF, AND OPERATION METHOD OF ELECTRONIC DEVICE INCLUDING ENCODER

Номер патента: US20220407949A1. Автор: Ryu Kyungho,Lim Hyunwook,Park Yong-Yun,KIM Kyungae,CHOI YOUNGMIN,LEE KILHOON. Владелец: . Дата публикации: 2022-12-22.

Sensor device and semiconductor device

Номер патента: US11997910B2. Автор: Takashi Nakagawa,Takayuki Ikeda,Takahiro Fukutome. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2024-05-28.

Optical semiconductor device and semiconductor light-emitting device

Номер патента: US12126138B2. Автор: Atsushi Nakamura,Hideaki Asakura,Shunya YAMAUCHI,Hayato TAKITA. Владелец: Lumentum Japan Inc. Дата публикации: 2024-10-22.

Method of manufacturing semiconductor device, and semiconductor device

Номер патента: US20170365981A1. Автор: Eiji Nakai,Hiroaki Tsuchiya,Harunaka Yamaguchi. Владелец: Mitsubishi Electric Corp. Дата публикации: 2017-12-21.

Method of manufacturing semiconductor device, and semiconductor device

Номер патента: US09948064B2. Автор: Eiji Nakai,Hiroaki Tsuchiya,Harunaka Yamaguchi. Владелец: Mitsubishi Electric Corp. Дата публикации: 2018-04-17.

Optical semiconductor device and semiconductor laser device

Номер патента: US20220344906A1. Автор: Hiroyuki Tarumi,Kenichi Nishi,Yuki Kamata,Yutaka Ohnishi,Keizo Takemasa. Владелец: Mirise Technologies Corp. Дата публикации: 2022-10-27.

Battery monitoring system and semiconductor device

Номер патента: US20240361399A1. Автор: Naoaki Sugimura. Владелец: Lapis Semiconductor Co Ltd. Дата публикации: 2024-10-31.

Semiconductor device including dll and semiconductor system

Номер патента: US20180159543A1. Автор: Young-Suk Seo,Da-In IM. Владелец: SK hynix Inc. Дата публикации: 2018-06-07.

Phase shifter and communication device including same

Номер патента: EP4369520A1. Автор: Yong Won Seo,Cha Gun Gang,Seong Man Kang,Oh Seog Choi,Hyoung Seok Yang,Sung Hwan So. Владелец: KMW Inc. Дата публикации: 2024-05-15.

Electrode assembly and electrochemical device including same

Номер патента: US20240250307A1. Автор: Won-Sik Bae,So-Mi Jeong,So-Yeong LEE,Kyeong-Hui BAE. Владелец: LG Energy Solution Ltd. Дата публикации: 2024-07-25.

Semiconductor diffraction grating device and semiconductor laser

Номер патента: US8243768B2. Автор: Michio Murata. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2012-08-14.

Semiconductor device, communication device, and semiconductor device inspecting method

Номер патента: US20050093026A1. Автор: Toshiki Seshita,Yoshitomo Sagae. Владелец: Toshiba Corp. Дата публикации: 2005-05-05.

Semiconductor array device and semiconductor optical device

Номер патента: US20240339810A1. Автор: Masahiro EBISU. Владелец: Lumentum Operations LLC. Дата публикации: 2024-10-10.

Method for manufacturing semiconductor device and semiconductor device

Номер патента: US09698569B2. Автор: Isao Watanabe,Satoshi Ae,Tetsuro Okuda,Shoutarou KITAMURA,Suguru Kato. Владелец: Renesas Electronics Corp. Дата публикации: 2017-07-04.

Battery monitoring system and semiconductor device

Номер патента: US20130257441A1. Автор: Masaru Sekiguchi. Владелец: Lapis Semiconductor Co Ltd. Дата публикации: 2013-10-03.

Separator for electrochemical device, manufacuring method therefor, and electrochemical device including same

Номер патента: EP4439843A1. Автор: Ji Eun Kim,Dong Hun BAE,Dong Wook Sung,Hwan Ho Shin. Владелец: LG Energy Solution Ltd. Дата публикации: 2024-10-02.

Method for producing semiconductor optical device and semiconductor optical device

Номер патента: US20120094415A1. Автор: Hideki Yagi,Hiroyuki Yoshinaga. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2012-04-19.

Method for manufacturing semiconductor device, and semiconductor device

Номер патента: US09705286B2. Автор: Susumu Harada. Владелец: Nichia Corp. Дата публикации: 2017-07-11.

Semiconductor device including chalcogen compound and semiconductor apparatus including the same

Номер патента: US12101942B2. Автор: Bonwon KOO,Changseung LEE,Wooyoung Yang,Minwoo Choi,Hajun SUNG,Dongho Ahn,Kwangmin Park,Chungman Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-09-24.

Packaging structure and semiconductor device having same, and electronic apparatus having semiconductor device

Номер патента: EP3869579A1. Автор: Wei Pang,Qingrui YANG,Menglun ZHANG,Chongling SUN. Владелец: ROFS Microsystem Tianjin Co Ltd. Дата публикации: 2021-08-25.

Semiconductor device, method of fabricating semiconductor device, and semiconductor structure having semiconductor device

Номер патента: US20230371277A1. Автор: Harry-Hak-Lay Chuang,Alexander Kalnitsky,Tien-Wei Chiang,Sheng-Haung Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-16.

Decoupling circuit and semiconductor device including the same

Номер патента: US20160197603A1. Автор: Gil-Su Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-07-07.

Decoupling circuit and semiconductor device including the same

Номер патента: US09692424B2. Автор: Gil-Su Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-06-27.

Encoder, decoder and semiconductor device including the same

Номер патента: US20140317472A1. Автор: Joon-Woo Kim,Hong-Sik Kim. Владелец: SK hynix Inc. Дата публикации: 2014-10-23.

Semiconductor drive device and semiconductor module

Номер патента: US20240195408A1. Автор: Tatsunori Sakano,Kento Adachi. Владелец: Toshiba Electronic Devices and Storage Corp. Дата публикации: 2024-06-13.

Semiconductor device and semiconductor device operating method

Номер патента: US09722625B2. Автор: Takahiro Kawano. Владелец: Renesas Electronics Corp. Дата публикации: 2017-08-01.

Manufacturing method for semiconductor device, and semiconductor device

Номер патента: EP4203000A1. Автор: Jie Bai,Mengmeng Yang. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-06-28.

Semiconductor device and semiconductor module

Номер патента: US20190207426A1. Автор: Koji Morita. Владелец: Lapis Semiconductor Co Ltd. Дата публикации: 2019-07-04.

Semiconductor memory device and semiconductor device

Номер патента: US20240284665A1. Автор: Hong-Soo Kim,Jong-Kook Park,Tae-keun Cho. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-08-22.

Error correcting code encoding circuit and semiconductor device including the same

Номер патента: US20240340025A1. Автор: Hong Rak Son,Kijun JEON,Geunyeong YU,Youngjun Hwang,Bohwan Jun,Dae-Yeol Yang,Kyoungbin PARK. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-10-10.

Semiconductor device and semiconductor module

Номер патента: US09800130B2. Автор: Yoshikazu Tanaka,Hiroshi Yoshida,Nobuya Nishida,Shiori Uota,Kyoko OYAMA. Владелец: Mitsubishi Electric Corp. Дата публикации: 2017-10-24.

Semiconductor device and semiconductor system including the same

Номер патента: US20150042385A1. Автор: Hyun-Woo Lee. Владелец: SK hynix Inc. Дата публикации: 2015-02-12.

Clock Generation Circuit and Semiconductor Device Including the Same

Номер патента: US20120173915A1. Автор: Takayuki Ikeda,Yoshiyuki Kurokawa,Masami Endo,Daisuke Kawae. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2012-07-05.

Multi-bit flip-flop region with serpentine data flow path, semiconductor device including same, method of operating same and method of manufacturing same

Номер патента: US20240256750A1. Автор: Hui-Zhong ZHUANG,Chih-Liang Chen,Wei-Hsiang Ma,Chih-Cheng Chuang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-01.

Memory device, method of forming the same, and semiconductor device having the same

Номер патента: US11737287B2. Автор: Yu-Chao Lin,Jung-Piao Chiu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-08-22.

Semiconductor device and semiconductor device control method

Номер патента: US20230109445A1. Автор: Keisuke KIYOMIZU. Владелец: Lapis Technology Co Ltd. Дата публикации: 2023-04-06.

Semiconductor device for a tuner and diversity receiver

Номер патента: WO2007005826A3. Автор: Hideyuki Jp Maejima. Владелец: Hideyuki Jp Maejima. Дата публикации: 2007-06-07.

Method of placing a semiconducting nanostructure and semiconductor device including the semiconducting nanostructure

Номер патента: US8604559B2. Автор: Ali Afzali-Ardakani,George S. Tulevski,Cherie R. Kagan,Supratik Guha,Emanuel Tutuc. Владелец: International Business Machines Corp. Дата публикации: 2013-12-10.

Method of placing a semiconducting nanostructure and semiconductor device including the semiconducting nanostructure

Номер патента: US20110180777A1. Автор: Ali Afzali-Ardakani,George S. Tulevski,Cherie R. Kagan,Supratik Guha,Emanuel Tutuc. Владелец: International Business Machines Corp. Дата публикации: 2011-07-28.

Semiconductor device and semiconductor device control method

Номер патента: US12119816B2. Автор: Keisuke KIYOMIZU. Владелец: Lapis Technology Co Ltd. Дата публикации: 2024-10-15.

Semiconductor device and semiconductor system

Номер патента: US20210336623A1. Автор: Kwang Chan LEE,Jeong Kwang Lee,Ho Jun YU. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-10-28.

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Номер патента: US20140317468A1. Автор: Joon-Woo Kim,Hong-Sik Kim. Владелец: SK hynix Inc. Дата публикации: 2014-10-23.

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Номер патента: US09673814B2. Автор: Saeng Hwan Kim,Won Kyung CHUNG. Владелец: SK hynix Inc. Дата публикации: 2017-06-06.

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Номер патента: US20240237329A1. Автор: Yu-Cheng Tung,Janbo Zhang. Владелец: Fujian Jinhua Integrated Circuit Co Ltd. Дата публикации: 2024-07-11.

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Номер патента: US10615789B1. Автор: Nobutake Taniguchi,Tatsuya Uda. Владелец: Mitsubishi Electric Corp. Дата публикации: 2020-04-07.

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Номер патента: US20200059174A1. Автор: Hisashi Sugie. Владелец: ROHM CO LTD. Дата публикации: 2020-02-20.

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Номер патента: US20080316790A1. Автор: Fumihiko Inoue,Kentaro Sera. Владелец: SPANSION LLC. Дата публикации: 2008-12-25.

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Номер патента: US20240324180A1. Автор: Ryosuke Yamamoto,Takuya KIKUCHI,Ken SHIMOMORI. Владелец: Kioxia Corp. Дата публикации: 2024-09-26.

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Номер патента: US09899926B2. Автор: Hiroaki Kojima. Владелец: Toshiba Corp. Дата публикации: 2018-02-20.

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Номер патента: US20240032308A1. Автор: Bonwon KOO,Changseung LEE,Wooyoung Yang,Minwoo Choi,Hajun SUNG,Dongho Ahn,Kwangmin Park,Chungman Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-01-25.

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Номер патента: US11818899B2. Автор: Bonwon KOO,Changseung LEE,Wooyoung Yang,Minwoo Choi,Hajun SUNG,Dongho Ahn,Kwangmin Park,Chungman Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-11-14.

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Номер патента: US20100171110A1. Автор: Hiroshi Sato. Владелец: Tokyo Electron Ltd. Дата публикации: 2010-07-08.

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Номер патента: AU2021213192A1. Автор: Richard P. Nardo,Andrew Moss,John Michael Kasunich,Breese John WATSON,Hugo VAN DER WALT,Farhad HAGHGOEIAN. Владелец: American Sterilizer Co. Дата публикации: 2022-09-22.

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Номер патента: US20160342552A1. Автор: IKENAGA Yoshifumi. Владелец: . Дата публикации: 2016-11-24.

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Номер патента: US09766647B2. Автор: Suk Won HA. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-09-19.

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Номер патента: US09978336B2. Автор: Kyoung Man Kim,Xiangyu Meng,Sung Chul Yoon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-05-22.

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Номер патента: US09684104B2. Автор: Sung-Hyun Nam,Kyun-Il Rah,Jong-Hyun Jung,Hye-Min Yu. Владелец: LG Chem Ltd. Дата публикации: 2017-06-20.

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Номер патента: US20150004531A1. Автор: PARK Yo-Choul,KIM Young-Min,Choi Yoo-Jeong,HONG Seung-Hee,SONG Hyun-Ji,KIM Yun-Jun,KIM Go-Un,KIM Hea-Jung,MOON Joon-Young,PARK Yu-Shin,PARK You-Jung,SHIN Seung-Wook,YOON Yong-Woon,LEE Chung-Heon. Владелец: . Дата публикации: 2015-01-01.

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Номер патента: US20160041470A1. Автор: LEE Jun-Ho,CHEON Hwan-Sung,KWON Hyo-Young,KIM Min-Gyum. Владелец: CHEIL INDUSTRIES INC.. Дата публикации: 2016-02-11.

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Номер патента: US20160116934A1. Автор: HA Suk Won. Владелец: . Дата публикации: 2016-04-28.

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Номер патента: US20160189665A1. Автор: KIM Kyoung Man,YOON Sung Chul,Meng Xiangyu. Владелец: . Дата публикации: 2016-06-30.

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Номер патента: US20140335447A1. Автор: KIM Young-Min,LEE Sung-jae,MOON Joon-Young,YOON Yong-Woon,Cho Youn-Jin. Владелец: . Дата публикации: 2014-11-13.

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Номер патента: KR101354639B1. Автор: 이성재,조연진,이철호,이충헌,하광일. Владелец: 제일모직주식회사. Дата публикации: 2014-01-27.

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Номер патента: TWI688944B. Автор: 金普永. Владелец: 南韓商三星電子股份有限公司. Дата публикации: 2020-03-21.

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Номер патента: KR101058110B1. Автор: 김금남,정보용. Владелец: 삼성모바일디스플레이주식회사. Дата публикации: 2011-08-24.

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Номер патента: US20010015924A1. Автор: Kazutami Arimoto,Hiroki Shimano. Владелец: Mitsubishi Electric Corp. Дата публикации: 2001-08-23.

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Номер патента: CN105825800B. Автор: 金普永. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-10-20.

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Номер патента: TW201331238A. Автор: Chung-Heon Lee,Hideo Hada,Sung-Jae Lee,Cheol-Ho Lee,Youn-Jin Cho. Владелец: Cheil Ind Inc. Дата публикации: 2013-08-01.

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Номер патента: US20030043664A1. Автор: Katsumi Dosaka,Masaru Haraguchi. Владелец: Mitsubishi Electric Corp. Дата публикации: 2003-03-06.

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Номер патента: CN105825800A. Автор: 金普永. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-08-03.

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Номер патента: US20160103260A1. Автор: NAM Sung-hyun,Rah Kyun-Il,JUNG Jong-Hyun,YU Hye-Min. Владелец: . Дата публикации: 2016-04-14.

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Номер патента: JP4816344B2. Автор: 雅士 森. Владелец: Denso Corp. Дата публикации: 2011-11-16.

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Номер патента: JPH10335236A. Автор: Yuji Kudo,祐司 工藤. Владелец: Nikon Corp. Дата публикации: 1998-12-18.

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Номер патента: JPH10335235A. Автор: Yuji Kudo,祐司 工藤. Владелец: Nikon Corp. Дата публикации: 1998-12-18.

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Номер патента: US09728235B2. Автор: TaeHyung Jung,Kwanweon Kim. Владелец: SK hynix Inc. Дата публикации: 2017-08-08.

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Номер патента: US20140133254A1. Автор: Zhiliang Xia,Sung Hee Lee,Chiho Kim,Nara KIM,Dae Sin KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2014-05-15.

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Номер патента: US20100172174A1. Автор: Jung Min Lee,Hyun Ho CHOI,Ho Jung Kim,Chul Woo Park,Sang Beom Kang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2010-07-08.

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Номер патента: US09851903B2. Автор: Young Jun YOON. Владелец: SK hynix Inc. Дата публикации: 2017-12-26.

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Номер патента: US20230184825A1. Автор: Tomonori Nakamura,Akira Shimase,Norimichi Chinone. Владелец: Hamamatsu Photonics KK. Дата публикации: 2023-06-15.

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Номер патента: US20210035616A1. Автор: Kyeong Pil KANG. Владелец: SK hynix Inc. Дата публикации: 2021-02-04.

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Номер патента: US09761328B2. Автор: Yong Suk Joo,Geun Ho Choi. Владелец: SK hynix Inc. Дата публикации: 2017-09-12.

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Номер патента: US09711205B2. Автор: Chul-woo Park,Young-Soo Sohn,Jong-Pil Son. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-07-18.

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Номер патента: US09710118B2. Автор: Yoon-Kyung Choi,Hyunkyu Ouh,Bumsoo Kim,Junchul Park,Jinchul Lee,Chadong Kim,Sang-Hyub Kang,Sanho Byun. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-07-18.

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Номер патента: US09671847B2. Автор: Je-kook Kim,Young-Hoon Lee,Min-Shik Seok. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-06-06.

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Номер патента: US11908534B2. Автор: Hiroyuki Fujimoto,Masahiro Yanagida. Владелец: Fujitsu Ltd. Дата публикации: 2024-02-20.

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Номер патента: US8325548B2. Автор: Tatsuru Matsuo. Владелец: Fujitsu Semiconductor Ltd. Дата публикации: 2012-12-04.

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Номер патента: US20100322023A1. Автор: Tatsuru Matsuo. Владелец: Fujitsu Semiconductor Ltd. Дата публикации: 2010-12-23.

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Номер патента: US20230184827A1. Автор: Tomonori Nakamura,Akira Shimase,Shigeru EURA,Norimichi Chinone. Владелец: Hamamatsu Photonics KK. Дата публикации: 2023-06-15.

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Номер патента: US20190267051A1. Автор: Kwandong KIM. Владелец: SK hynix Inc. Дата публикации: 2019-08-29.

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Номер патента: US12051461B2. Автор: Sunyoung Kim,Younghun Seo,Hoseok LEE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-30.

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Номер патента: US12046323B2. Автор: Min Jun Choi,Jeong Jin HWANG,Sung Nyou YU. Владелец: SK hynix Inc. Дата публикации: 2024-07-23.

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Номер патента: US20240339153A1. Автор: Sunyoung Kim,Younghun Seo,Hoseok LEE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-10-10.

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Номер патента: US09837162B2. Автор: Takafumi Noguchi,Atsuo Yoneyama,Masayuki KAWAE. Владелец: Renesas Electronics Corp. Дата публикации: 2017-12-05.

Current generation circuits and semiconductor devices including the same

Номер патента: US09836074B2. Автор: Hae Rang Choi. Владелец: SK hynix Inc. Дата публикации: 2017-12-05.

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Номер патента: US12032396B2. Автор: Hiroki Murakami. Владелец: Winbond Electronics Corp. Дата публикации: 2024-07-09.

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Номер патента: US20170315952A1. Автор: Hiroyuki Takahashi. Владелец: Renesas Electronics Corp. Дата публикации: 2017-11-02.

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Номер патента: US20100122147A1. Автор: Shinichi Kanno,Toshio Shirakihara,Yosuke Kuroda. Владелец: Toshiba Corp. Дата публикации: 2010-05-13.

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Номер патента: US20090116316A1. Автор: Young-Jun Ku,Ji-Eun Jang,Jeong-Yoon Ahn. Владелец: Hynix Semiconductor Inc. Дата публикации: 2009-05-07.

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Номер патента: US20180182441A1. Автор: Jae Young Lee. Владелец: SK hynix Inc. Дата публикации: 2018-06-28.

Memory controller controlling semiconductor storage device and semiconductor device

Номер патента: US7848143B2. Автор: Shinichi Kanno,Toshio Shirakihara,Yosuke Kuroda. Владелец: Toshiba Corp. Дата публикации: 2010-12-07.

Refresh time detection circuit and semiconductor device including the same

Номер патента: US09824745B1. Автор: Hyeng Ouk LEE. Владелец: SK hynix Inc. Дата публикации: 2017-11-21.

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Номер патента: US20150380074A1. Автор: Young Geun Choi. Владелец: SK hynix Inc. Дата публикации: 2015-12-31.

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Номер патента: US20160098280A1. Автор: Hyun-Su Yoon. Владелец: SK hynix Inc. Дата публикации: 2016-04-07.

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Номер патента: US11742009B2. Автор: Hyun Seung Kim. Владелец: SK hynix Inc. Дата публикации: 2023-08-29.

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Номер патента: US11860657B2. Автор: Shuichi Takada. Владелец: Kioxia Corp. Дата публикации: 2024-01-02.

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Номер патента: US09870813B2. Автор: Choung-Ki Song. Владелец: SK hynix Inc. Дата публикации: 2018-01-16.

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Номер патента: US09747113B2. Автор: Hyun-Su Yoon. Владелец: SK hynix Inc. Дата публикации: 2017-08-29.

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Номер патента: US09696750B2. Автор: Bok Rim KO. Владелец: SK hynix Inc. Дата публикации: 2017-07-04.

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Номер патента: US20190271734A1. Автор: Toru Matsumoto,Akira Shimase. Владелец: Hamamatsu Photonics KK. Дата публикации: 2019-09-05.

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Номер патента: US20170076756A1. Автор: Kosuke Yanagidaira,Shouichi Ozaki. Владелец: Toshiba Corp. Дата публикации: 2017-03-16.

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Номер патента: US20130322195A1. Автор: Dong-Kyun Kim. Владелец: Individual. Дата публикации: 2013-12-05.

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Номер патента: EP4148438A1. Автор: Tomonori Nakamura,Akira Shimase,Shigeru EURA,Norimichi Chinone. Владелец: Hamamatsu Photonics KK. Дата публикации: 2023-03-15.

Voltage divider circuit and semiconductor device

Номер патента: US20110227635A1. Автор: Kenji Yoshida,Kazuaki Hashimoto. Владелец: Individual. Дата публикации: 2011-09-22.

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Номер патента: US20190258543A1. Автор: Chang Hyun Park. Владелец: SK hynix Inc. Дата публикации: 2019-08-22.

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Номер патента: US20170213582A1. Автор: Shuhei KAMANO. Владелец: Lapis Semiconductor Co Ltd. Дата публикации: 2017-07-27.

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Номер патента: US09865312B2. Автор: Shuhei KAMANO. Владелец: Lapis Semiconductor Co Ltd. Дата публикации: 2018-01-09.

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Номер патента: US09829952B2. Автор: Se-Ho Kim,Young-Gwan Kim,Chan-Wook Park,Jung-min Oh,Taek-Hyun Kim,I-Saac Hong. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-11-28.

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Номер патента: US09653125B2. Автор: Kosuke Yanagidaira,Shouichi Ozaki. Владелец: Toshiba Corp. Дата публикации: 2017-05-16.

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Номер патента: US20110078431A1. Автор: Akira Okamoto,Takayuki Kinoshita,Makoto Hataida,Seiji Satta. Владелец: Fujitsu Ltd. Дата публикации: 2011-03-31.

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Номер патента: US20170032830A1. Автор: Woo Young Lee. Владелец: SK hynix Inc. Дата публикации: 2017-02-02.

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Номер патента: US20170169865A1. Автор: Hyun Gyu LEE. Владелец: SK hynix Inc. Дата публикации: 2017-06-15.

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Номер патента: US20220252773A1. Автор: Dong Yoon Shin,Jun Mo Koo,Bong Choon KIM,Jung Hun YOU,Sang Hum LEE. Владелец: Samsung SDI Co Ltd. Дата публикации: 2022-08-11.

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Номер патента: US20100302878A1. Автор: Hee Bok Kang. Владелец: Hynix Semiconductor Inc. Дата публикации: 2010-12-02.

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Номер патента: US12125515B2. Автор: Sang-Hoon Jung,Seong-Jin Cho. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-10-22.

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Номер патента: US20240310938A1. Автор: Shunpei Yamazaki,Hajime Kimura. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2024-09-19.

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Номер патента: US12100465B2. Автор: Geunyeong YU,Youngjun Hwang,Hongrak Son. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-09-24.

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Номер патента: US09835660B2. Автор: Akira Uemura,Osamu Soma,Kenji Amada. Владелец: Renesas Electronics Corp. Дата публикации: 2017-12-05.

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Номер патента: US09817425B2. Автор: Jong Joo SHIM. Владелец: SK hynix Inc. Дата публикации: 2017-11-14.

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Номер патента: US09817065B2. Автор: Bo Kyeom Kim,Tae Seung SHIN. Владелец: SK hynix Inc. Дата публикации: 2017-11-14.

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Номер патента: US09805824B2. Автор: Dong Keum Kang. Владелец: SK hynix Inc. Дата публикации: 2017-10-31.

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Номер патента: US09659611B1. Автор: Hyun Gyu LEE. Владелец: SK hynix Inc. Дата публикации: 2017-05-23.

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Номер патента: US09653145B1. Автор: Hong Ki Moon,Jeong Tae Hwang. Владелец: SK hynix Inc. Дата публикации: 2017-05-16.

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Номер патента: US20160254033A1. Автор: Myung Hwan Lee. Владелец: SK hynix Inc. Дата публикации: 2016-09-01.

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Номер патента: US20040032277A1. Автор: Kenneth Marr. Владелец: Individual. Дата публикации: 2004-02-19.

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Номер патента: US09959922B2. Автор: Min su Park. Владелец: SK hynix Inc. Дата публикации: 2018-05-01.

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Номер патента: US09959164B2. Автор: Min su Park. Владелец: SK hynix Inc. Дата публикации: 2018-05-01.

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Номер патента: US09916887B2. Автор: Min su Park. Владелец: SK hynix Inc. Дата публикации: 2018-03-13.

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Номер патента: US09911505B2. Автор: Mi Hyun Hwang,Chul Moon JUNG. Владелец: SK hynix Inc. Дата публикации: 2018-03-06.

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Номер патента: US09779799B2. Автор: Min su Park. Владелец: SK hynix Inc. Дата публикации: 2017-10-03.

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Номер патента: US20180067796A1. Автор: Hyung Sik WON,Hae Rang Choi. Владелец: SK hynix Inc. Дата публикации: 2018-03-08.

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Номер патента: US20150046723A1. Автор: Sang Il Park,Sang Kwon Lee. Владелец: SK hynix Inc. Дата публикации: 2015-02-12.

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Номер патента: US20080055992A1. Автор: Hiroyuki Kutsukake,Kikuko Ishida. Владелец: Individual. Дата публикации: 2008-03-06.

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Номер патента: US09773530B1. Автор: Sun Ki CHO. Владелец: SK hynix Inc. Дата публикации: 2017-09-26.

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Номер патента: US09679621B2. Автор: Min Soo Park,Min Jun Choi,Hyun Wook HAN,Jin Se KIM,Moon Yub NA. Владелец: SK hynix Inc. Дата публикации: 2017-06-13.

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Номер патента: RU2651192C2. Автор: Рудольф Марк,Мартин ФИДЛЕР,Готтфрид БРАУН. Владелец: Марк Хидраулик Гмбх. Дата публикации: 2018-04-18.

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Номер патента: RU2755532C1. Автор: Цзюнь Ван,Юань ЮАНЬ,Цайся ВАН,Фухуай ЦЗЯ,Ган Тао,Хунцзянь ТУ,Фэйфэй СЮН.,Лэй ЛЭЙ,Луюнь СЮЙ. Владелец: Нинбо Юйфантан Байолоджикал Сайенс Энд Текнолоджи Ко., Лтд.. Дата публикации: 2021-09-17.

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Номер патента: US20070214444A1. Автор: Nobuyuki Nakai,Yuji Yamasaki. Владелец: Matsushita Electric Industrial Co Ltd. Дата публикации: 2007-09-13.

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Номер патента: US12039053B2. Автор: Eun Young Jung. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-16.

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Номер патента: EP1204119A3. Автор: Masaharu Wada,Atsushi c/o Fujitsu Limited Takeuchi. Владелец: Fujitsu Ltd. Дата публикации: 2004-02-04.

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Номер патента: US20100082317A1. Автор: Takashi Kurusu,Hiroyoshi Tanimoto. Владелец: Individual. Дата публикации: 2010-04-01.

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Номер патента: US20170365303A1. Автор: Donggun Kim,Do-Sun HONG,Yong Ju Kim,Sang Gu JO. Владелец: SK hynix Inc. Дата публикации: 2017-12-21.

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Номер патента: GB2546335A8. Автор: MOI Sonja,Almås Carlsen Liv,Joakim Skadsem Hans,Aminul Islam Md,Anders Helstrup Ole. Владелец: Statoil Petroleum ASA. Дата публикации: 2017-11-29.

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Номер патента: US20180068743A1. Автор: Sang Gu JO. Владелец: SK hynix Inc. Дата публикации: 2018-03-08.

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Номер патента: US20070274139A1. Автор: Masahiro Yamashita,Takashi Uehara,Mamoru Takaku,Hiroaki Nambu. Владелец: Renesas Technology Corp. Дата публикации: 2007-11-29.

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Номер патента: US09880196B2. Автор: Akira Okada,Hajime Akiyama. Владелец: Mitsubishi Electric Corp. Дата публикации: 2018-01-30.

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Номер патента: US09792970B2. Автор: Kyeong Tae Kim,Cheol Hoe KIM. Владелец: SK hynix Inc. Дата публикации: 2017-10-17.

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Номер патента: US20120153511A1. Автор: . Владелец: . Дата публикации: 2012-06-21.

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Номер патента: US20120168894A1. Автор: Kim Min-Soo,CHEON Hwan-Sung,KIM Young-Min,LEE Cheol-ho,Song Jee-Yun,LEE Chung-Heon. Владелец: . Дата публикации: 2012-07-05.

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Номер патента: JPH11288879A. Автор: Hisafumi Iwata,尚史 岩田,Tetsuji Yokouchi,哲司 横内. Владелец: HITACHI LTD. Дата публикации: 1999-10-19.

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Номер патента: US20120001350A1. Автор: . Владелец: . Дата публикации: 2012-01-05.

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Номер патента: US20120001272A1. Автор: . Владелец: . Дата публикации: 2012-01-05.

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Номер патента: US20120001175A1. Автор: . Владелец: . Дата публикации: 2012-01-05.

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Номер патента: US20120001267A1. Автор: . Владелец: . Дата публикации: 2012-01-05.

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Номер патента: US20120001275A1. Автор: . Владелец: Panasonic Corporation. Дата публикации: 2012-01-05.

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Номер патента: US20120001312A1. Автор: . Владелец: Panasonic Corporation. Дата публикации: 2012-01-05.

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Номер патента: US20120001331A1. Автор: . Владелец: KABUSHI KAISHA TOSHIBA. Дата публикации: 2012-01-05.

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Номер патента: US20120001323A1. Автор: . Владелец: GLOBALFOUNDRIES INC.. Дата публикации: 2012-01-05.

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Номер патента: US20120000965A1. Автор: . Владелец: . Дата публикации: 2012-01-05.

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Номер патента: US20120002387A1. Автор: . Владелец: . Дата публикации: 2012-01-05.

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Номер патента: US20120001168A1. Автор: . Владелец: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.. Дата публикации: 2012-01-05.

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Номер патента: US20120003787A1. Автор: TANAKA Tetsuhiro,KATO Erika. Владелец: . Дата публикации: 2012-01-05.

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Номер патента: US20120003795A1. Автор: . Владелец: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.. Дата публикации: 2012-01-05.

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Номер патента: US20120003829A1. Автор: . Владелец: . Дата публикации: 2012-01-05.

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Номер патента: US20120001300A1. Автор: Ito Takayuki,ISHIDA Tatsuya,Yoshino Kenichi,Naito Tatsuya. Владелец: KABUSHIKI KAISHA TOSHIBA. Дата публикации: 2012-01-05.

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Номер патента: US20120001344A1. Автор: IDANI Naoki,TAKESAKO Satoshi. Владелец: FUJITSU SEMICONDUCTOR LIMITED. Дата публикации: 2012-01-05.

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Номер патента: US20120001173A1. Автор: . Владелец: . Дата публикации: 2012-01-05.

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Номер патента: RU2641601C2. Автор: Владимир Федорович Чищин,Станислав Петрович Скорняков,Сергей Николаевич Колычев,Анна Вячеславовна Синица. Владелец: Акционерное Общество "Новосибирский Завод Полупроводниковых Приборов С Окб" (Ао "Нзпп С Окб"). Дата публикации: 2018-01-18.

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Номер патента: US20120000217A1. Автор: Gudnason Snaebjorn Tr.. Владелец: NanoICE, Inc.. Дата публикации: 2012-01-05.

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Номер патента: US20120003549A1. Автор: . Владелец: . Дата публикации: 2012-01-05.

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Номер патента: MY119545A. Автор: Ken Ota. Владелец: Sumitomo Bakelite Co. Дата публикации: 2005-06-30.

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Номер патента: US20120001169A1. Автор: Yamazaki Shunpei. Владелец: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.. Дата публикации: 2012-01-05.

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Номер патента: US20120001177A1. Автор: . Владелец: Panasonic Corporation. Дата публикации: 2012-01-05.

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Номер патента: US20120001255A1. Автор: PARK JIN WON. Владелец: HYNIX SEMICONDUCTOR INC.. Дата публикации: 2012-01-05.

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Номер патента: US20120001332A1. Автор: TANAKA Tetsuhiro. Владелец: . Дата публикации: 2012-01-05.

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Номер патента: US20120001342A1. Автор: . Владелец: RENESAS ELECTRONICS CORPORATION. Дата публикации: 2012-01-05.

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Номер патента: US20120003797A1. Автор: . Владелец: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.. Дата публикации: 2012-01-05.

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Номер патента: US20120003799A1. Автор: . Владелец: . Дата публикации: 2012-01-05.

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