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Hybrid conductive structures

Номер патента: US20240096998A1
Опубликовано: 21-03-2024
Автор(ы): Chein-Shun LIAO, Cheng-Wei Chang, Chia-Hung Chu, Chij-chien CHI, Hsu-Kai Chang, Kai-Ting Huang, Keng-Chu Lin, Shuen-Shin Liang, Yi-Ying Liu
Принадлежит: Taiwan Semiconductor Manufacturing Co TSMC Ltd
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