Selectively deposited parylene masks
Номер патента: EP3740965A1
Опубликовано: 25-11-2020
Автор(ы): Abhijit Basu Mallick, Fei Wang, Miaojun WANG, Pramit MANNA, Robert Jan Visser, Shishi Jiang
Принадлежит: Applied Materials Inc
Опубликовано: 25-11-2020
Автор(ы): Abhijit Basu Mallick, Fei Wang, Miaojun WANG, Pramit MANNA, Robert Jan Visser, Shishi Jiang
Принадлежит: Applied Materials Inc
Реферат: Methods of selectively depositing a mask layer on a surface of a patterned substrate and self-aligned patterned masks are provided herein. In one embodiment, a method of selectivity depositing a mask layer includes positioning the patterned substrate on a substrate support in a processing volume of a processing chamber, exposing the surface of the patterned substrate to a parylene monomer gas, forming a first layer on the patterned substrate, wherein the first layer comprises a patterned parylene layer, and depositing a second layer on the first layer. In another embodiment, a self-aligned patterned mask comprises a parylene layer comprising a plurality of parylene features and a plurality of openings, the parylene layer is disposed on a patterned substrate comprising a dielectric layer and a plurality of metal features, the plurality of metal feature comprise a parylene deposition inhibitor metal, and the plurality of parylene features are selectivity formed on dielectric surfaces of the dielectric layer.
Selectively deposited parylene masks
Номер патента: WO2019143533A1. Автор: Fei Wang,Robert Jan Visser,Abhijit Basu Mallick,Pramit MANNA,Shishi Jiang,Miaojun WANG. Владелец: Applied Materials, Inc.. Дата публикации: 2019-07-25.