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Heterojunction bipolar transistor and manufacturing method making the same

Номер патента: US20050085035A1
Опубликовано: 21-04-2005
Автор(ы): Chang-Jung Chu, Chih-Chiang Shen, Chin-Kun Peng, Norio Hayafuji, Rui-Huang Cheng, Yong-Yin Chen
Принадлежит: Procomp Informatics Ltd
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