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FinFET Device With High-K Metal Gate Stack

Номер патента: US20180350992A1
Опубликовано: 06-12-2018
Автор(ы): CHANG Chih-Sheng, Ching Kuo-Cheng, Fung Ka-Hing, Wu Zhiqiang
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Superior Integrity of High-K Metal Gate Stacks by Capping STI Regions

Номер патента: US20120223407A1. Автор: Baars Peter,Scheiper Thilo,Beyer Sven. Владелец: GLOBALFOUNDRIES INC.. Дата публикации: 2012-09-06.

SUPERIOR INTEGRITY OF HIGH-K METAL GATE STACKS BY REDUCING STI DIVOTS BY DEPOSITING A FILL MATERIAL AFTER STI FORMATION

Номер патента: US20120235245A1. Автор: Pal Rohit,Kronholz Stephan-Detlef. Владелец: GLOBALFOUNDRIES INC.. Дата публикации: 2012-09-20.

CONTROL OF FLATBAND VOLTAGES AND THRESHOLD VOLTAGES IN HIGH-K METAL GATE STACKS AND STRUCTURES FOR CMOS DEVICES

Номер патента: US20120286338A1. Автор: Ando Takashi,Narayanan Vijay,Jagannathan Hemanth. Владелец: INTERNATIONAL BUSINESS MACHINES CORPORATION. Дата публикации: 2012-11-15.

MULTIPLE HIGH-K METAL GATE STACKS IN A FIELD EFFECT TRANSISTOR

Номер патента: US20130277766A1. Автор: Carter Richard,Kelwing Torben,Trentzsch Martin. Владелец: GLOBALFOUNDRIES INC.. Дата публикации: 2013-10-24.

Method to Improve Reliability of High-k Metal Gate Stacks

Номер патента: US20140120707A1. Автор: Ando Takashi,Narayanan Vijay,Linder Barry P.,Cartier Eduard A.. Владелец: INTERNATIONAL BUSINESS MACHINES, INC.. Дата публикации: 2014-05-01.

METHODS OF TAILORING WORK FUNCTION OF SEMICONDUCTOR DEVICES WITH HIGH-K/METAL LAYER GATE STRUCTURES BY PERFORMING A FLUORINE IMPLANT PROCESS

Номер патента: US20130330900A1. Автор: Hoentschel Jan,Pandey Shesh Mani,Ong Shiang Yang. Владелец: GLOBALFOUNDRIES INC.. Дата публикации: 2013-12-12.

Semiconductor power device with high-K medium tank

Номер патента: CN102184939B. Автор: 张波,陈曦,王元刚,罗小蓉,雷天飞,李肇基,姚国亮,葛瑞. Владелец: University of Electronic Science and Technology of China. Дата публикации: 2012-08-29.

Structure and Method for MOSFETS with High-K and Metal Gate Structure

Номер патента: US20130119487A1. Автор: Lin Jr Jung,Sun Yun-Ju,Chang Shih-Hsun,Chen Chia-Jen,Yamamoto Tomonari,Kuo Chih-Wei,Sun Meng-Yi,Ting Kuo-Chiang. Владелец: Taiwan Semiconductor Manufacturing Company, Ltd.. Дата публикации: 2013-05-16.

The manufacture method of high-K metal gate electrode and high-K metal gate structure thereof

Номер патента: CN103187255B. Автор: 韩秋华,黄怡,孟晓莹. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2015-12-16.

HIGH-K METAL GATE ELECTRODE STRUCTURES FORMED BY REDUCING A GATE FILL ASPECT RATIO IN REPLACEMENT GATE TECHNOLOGY

Номер патента: US20120319205A1. Автор: Wei Andy,Hempel Klaus,Mazur Martin. Владелец: GLOBALFOUNDRIES INC.. Дата публикации: 2012-12-20.

Combined Substrate High-K Metal Gate Device and Oxide-Polysilicon Gate Device, and Process of Fabricating Same

Номер патента: US20120292708A1. Автор: Chen Xiangdong,Xia Wei. Владелец: BROADCOM CORPORATION. Дата публикации: 2012-11-22.

HIGH-K/METAL GATE TRANSISTOR WITH L-SHAPED GATE ENCAPSULATION LAYER

Номер патента: US20120299122A1. Автор: Narayanan Vijay,Sleight Jeffrey W.,MO Renee T.,NATZLE Wesley C.. Владелец: INTERNATIONAL BUSINESS MACHINES CORPORATION. Дата публикации: 2012-11-29.

ENHANCED GATE REPLACEMENT PROCESS FOR HIGH-K METAL GATE TECHNOLOGY

Номер патента: US20130154021A1. Автор: ZHU Ming,Chuang Hak-Lay. Владелец: Taiwan Semiconductor Manufacturing Company, Ltd.. Дата публикации: 2013-06-20.

High-K Metal Gate Electrode Structure Formed by Removing a Work Function on Sidewalls in Replacement Gate Technology

Номер патента: US20130168773A1. Автор: Hempel Klaus,Stephan Rolf,PRINDLE Christopher. Владелец: GLOBALFOUNDRIES INC.. Дата публикации: 2013-07-04.

CET AND GATE CURRENT LEAKAGE REDUCTION IN HIGH-K METAL GATE ELECTRODE STRUCTURES BY HEAT TREATMENT AFTER DIFFUSION LAYER REMOVAL

Номер патента: US20130288435A1. Автор: Carter Richard,Kelwing Torben,Trentzsch Martin,Bayha Boris,Grass Carsten. Владелец: GLOBALFOUNDRIES INC.. Дата публикации: 2013-10-31.

A kind of lateral power with high K insulation layer

Номер патента: CN103219386B. Автор: 郭宇锋,姚佳飞. Владелец: Nanjing Post and Telecommunication University. Дата публикации: 2016-01-20.

Metal Finger Capacitor for High-K Metal Gate Processes

Номер патента: US20130113077A1. Автор: ITO Akira,WOO Agnes Neves,Tran Pascal,Shiau Guang-Jye,Lu Chao-Yang,Wang Jung. Владелец: BROADCOM CORPORATION. Дата публикации: 2013-05-09.

METHODS OF FORMING TRANSISTOR DEVICES WITH HIGH-K INSULATION LAYERS AND THE RESULTING DEVICES

Номер патента: US20140027859A1. Автор: Flachowsky Stefan,Kessler Matthias,GERHARDT Martin. Владелец: GLOBALFOUNDRIES INC.. Дата публикации: 2014-01-30.

Transistors Comprising High-K Metal Gate Electrode Structures and Embedded Strain-Inducing Semiconductor Alloys Formed in a Late Stage

Номер патента: US20120025266A1. Автор: Hoentschel Jan,Scheiper Thilo,Beyer Sven,Griebenow Uwe. Владелец: GLOBALFOUNDRIES INC.. Дата публикации: 2012-02-02.

Polysilicon Resistors Formed in a Semiconductor Device Comprising High-K Metal Gate Electrode Structures

Номер патента: US20120049291A1. Автор: . Владелец: GLOBALFOUNDRIES INC.. Дата публикации: 2012-03-01.

Reduced Threshold Voltage-Width Dependency in Transistors Comprising High-K Metal Gate Electrode Structures

Номер патента: US20120049293A1. Автор: . Владелец: GLOBALFOUNDRIES INC.. Дата публикации: 2012-03-01.

METHOD OF FABRICATING DUAL HIGH-K METAL GATE FOR MOS DEVICES

Номер патента: US20120086085A1. Автор: Lin Kang-Cheng,Huang Kuo-Tai,Hsu Peng-Fu. Владелец: Taiwan Semiconductor Manufacturing Company, Ltd.. Дата публикации: 2012-04-12.

STRUCTURE OF HIGH-K METAL GATE SEMICONDUCTOR TRANSISTOR

Номер патента: US20120098067A1. Автор: Yuan Jun,Yin Haizhou,Luo Zhijiong,Park Dae-Gyu,Gluschenkov Oleg,Schepis Dominic. Владелец: INTERNATIONAL BUSINESS MACHINES CORPORATION. Дата публикации: 2012-04-26.

POST SILICIDE TESTING FOR REPLACEMENT HIGH-K METAL GATE TECHNOLOGIES

Номер патента: US20120119778A1. Автор: Fried David M.,Ahsan Ishtiaq,Goren Lidor,Liao Jiun-Hsin. Владелец: INTERNATIONAL BUSINESS MACHINES CORPORATION. Дата публикации: 2012-05-17.

SILICON REMOVAL FROM SURFACES AND METHOD OF FORMING HIGH K METAL GATE STRUCTURES USING SAME

Номер патента: US20120135590A1. Автор: . Владелец: ADVANCED TECHNOLOGY MATERIALS, INC.. Дата публикации: 2012-05-31.

HIGH-K METAL GATE DEVICE

Номер патента: US20120146160A1. Автор: Tan Shyue Seng,Yin Chunshan. Владелец: GLOBALFOUNDRIES Singapore Pte. Ltd.. Дата публикации: 2012-06-14.

Sacrificial Spacer Approach for Differential Source/Drain Implantation Spacers in Transistors Comprising a High-K Metal Gate Electrode Structure

Номер патента: US20120156837A1. Автор: Flachowsky Stefan,Scheiper Thilo,Ruttloff Kerstin,Wiatr Maciej. Владелец: GLOBALFOUNDRIES INC.. Дата публикации: 2012-06-21.

High-K Metal Gate Electrode Structures Formed by Cap Layer Removal Without Sacrificial Spacer

Номер патента: US20120161243A1. Автор: . Владелец: GLOBALFOUNDRIES INC.. Дата публикации: 2012-06-28.

Transistor Comprising High-K Metal Gate Electrode Structures Including a Polycrystalline Semiconductor Material and Embedded Strain-Inducing Semiconductor Alloys

Номер патента: US20120161250A1. Автор: . Владелец: GLOBALFOUNDRIES INC.. Дата публикации: 2012-06-28.

MEMORY CELL USING BTI EFFECTS IN HIGH-K METAL GATE MOS

Номер патента: US20120163103A1. Автор: Jan Chia-Hong,Hafez Walid M.,Rahman Anisur. Владелец: . Дата публикации: 2012-06-28.

METHODS OF FABRICATING HIGH-K METAL GATE DEVICES

Номер патента: US20120164822A1. Автор: Lin Jr Jung,CHEN Ryan Chia-Jen,Lin Yih-Ann,Chen Chien-Hao,Huang Kuo-Tai,Chen Yi-Hsing. Владелец: Taiwan Semiconductor Manufacturing Company, Ltd.. Дата публикации: 2012-06-28.

METHOD FOR FABRICATING A HIGH-K METAL GATE MOS

Номер патента: US20120164824A1. Автор: JIANG LI,Li Mingqi. Владелец: Semiconductor Manufacturing International (Shanghai) Corporation. Дата публикации: 2012-06-28.

PROGRAMMABLE HIGH-K/METAL GATE MEMORY DEVICE

Номер патента: US20120184073A1. Автор: Cheng Kangguo,Pei Chengwen,Kothandaraman Chandrasekharan,BOOTH,JR. ROGER A.. Владелец: INTERNATIONAL BUSINESS MACHINES CORPORATION. Дата публикации: 2012-07-19.

STRUCTURE AND METHOD FOR REDUCTION OF VT-W EFFECT IN HIGH-K METAL GATE DEVICES

Номер патента: US20120187522A1. Автор: . Владелец: INTERNATIONAL BUSINESS MACHINES CORPORATION. Дата публикации: 2012-07-26.

Complementary Transistors Comprising High-K Metal Gate Electrode Structures and Epitaxially Formed Semiconductor Materials in the Drain and Source Areas

Номер патента: US20120211838A1. Автор: Kronholz Stephan,Lenski Markus,Beernink Gunda. Владелец: GLOBALFOUNDRIES INC.. Дата публикации: 2012-08-23.

Reduced Threshold Voltage-Width Dependency and Reduced Surface Topography in Transistors Comprising High-K Metal Gate Electrode Structures by a Late Carbon Incorporation

Номер патента: US20120282744A1. Автор: Javorka Peter,Kronholz Stephan. Владелец: GLOBALFOUNDRIES INC.. Дата публикации: 2012-11-08.

HIGH-K METAL GATE DEVICE

Номер патента: US20120292719A1. Автор: TEH Young Way,AQUILINO Michael V.,SHEIKH Arifuzzaman (Arif),TAN Yun Ling,ZHANG Hao,NAIR Deleep R.,LI Jinghong H. (John). Владелец: . Дата публикации: 2012-11-22.

DUMMY PATTERNS FOR IMPROVING WIDTH DEPENDENT DEVICE MISMATCH IN HIGH-K METAL GATE PROCESS

Номер патента: US20130009250A1. Автор: Hsu Tse-Hsiang,Ko Ching-Chung,LEE Tung-Hsing. Владелец: MEDIATEK INC.. Дата публикации: 2013-01-10.

WORK FUNCTION ADJUSTMENT IN HIGH-K METAL GATE ELECTRODE STRUCTURES BY SELECTIVELY REMOVING A BARRIER LAYER

Номер патента: US20130017679A1. Автор: Lenski Markus,Hempel Klaus,Schroeder Vivien,Metzger Joachim,Binder Robert. Владелец: GLOBALFOUNDRIES INC.. Дата публикации: 2013-01-17.

N-CHANNEL TRANSISTOR COMPRISING A HIGH-K METAL GATE ELECTRODE STRUCTURE AND A REDUCED SERIES RESISTANCE BY EPITAXIALLY FORMED SEMICONDUCTOR MATERIAL IN THE DRAIN AND SOURCE AREAS

Номер патента: US20130032877A1. Автор: Flachowsky Stefan,Ostermay Ina,Illgen Ralf. Владелец: GLOBALFOUNDRIES INC.. Дата публикации: 2013-02-07.

Low Threshold Voltage And Inversion Oxide thickness Scaling For A High-K Metal Gate P-Type MOSFET

Номер патента: US20130034940A1. Автор: Ando Takashi,Kwon Unoh,Narayanan Vijay,Frank Martin M.,Choi Changhwan. Владелец: INTERNATIONAL BUSINESS MACHINES CORPORATION. Дата публикации: 2013-02-07.

HIGH-K METAL GATE ELECTRODE STRUCTURES FORMED BY EARLY CAP LAYER ADAPTATION

Номер патента: US20130034942A1. Автор: Wei Andy,Pal Rohit,Beyer Sven,Carter Richard. Владелец: GLOBALFOUNDRIES INC.. Дата публикации: 2013-02-07.

SELF-ALIGNED INSULATED FILM FOR HIGH-K METAL GATE DEVICE

Номер патента: US20130056837A1. Автор: Peng Chih-Tang,Jeng Pei-Ren,Chuang Hak-Lay,Young Bao-Ru,Lin Huan-Just,LIN Hui-Wen,Lin Ta-Wei,Yeh Chih-Yang,Yang Jen-Sheng,Tu Yuan-Tien,Ng Jin-Aun,Chang Maxi,Kao Jung-Hui,Lo Shih-Hao. Владелец: Taiwan Semiconductor Manufacturing Company, Ltd.. Дата публикации: 2013-03-07.

CONTACT FOR HIGH-K METAL GATE DEVICE

Номер патента: US20130069174A1. Автор: Chuang Hak-Lay,Young Bao-Ru,Lin Huan-Just,Wu Wei Cheng,Chung Sheng-Chen,Li Tsai-Chun. Владелец: Taiwan Semiconductor Manufacturing Company, Ltd.. Дата публикации: 2013-03-21.

HIGH-K METAL GATE RANDOM ACCESS MEMORY

Номер патента: US20130168751A1. Автор: LEE TZUNG-HAN,HUANG CHUNG-LIN,Chu Ron Fu. Владелец: INOTERA MEMORIES, INC.. Дата публикации: 2013-07-04.

CREATING AN EMBEDDED RERAM MEMORY FROM A HIGH-K METAL GATE TRANSISTOR STRUCTURE

Номер патента: US20130221317A1. Автор: Chiang Tony P.,Pramanik Dipankar,Lazosky David. Владелец: Intermolecular, Inc. Дата публикации: 2013-08-29.

Structure and Method to Modulate Threshold Voltage For High-K Metal Gate Field Effect Transistors (FETs)

Номер патента: US20130313643A1. Автор: Ponoth Shom,Doris Bruce B.,Cheng Kangguo,Khakifirooz Ali,Kulkarni Pranita,Schmitz Stefan,Holmes Steven J.,SREENIVASAN Raghavasimhan. Владелец: INTERNATIONAL BUSINESS MACHINES CORPORATION. Дата публикации: 2013-11-28.

SUPERIOR STABILITY OF CHARACTERISTICS OF TRANSISTORS HAVING AN EARLY FORMED HIGH-K METAL GATE

Номер патента: US20130316511A1. Автор: Kronholz Stephan,Lenski Markus,Zakowsky Nadja. Владелец: GLOBALFOUNDRIES INC.. Дата публикации: 2013-11-28.

PREVENTING FULLY SILICIDED FORMATION IN HIGH-K METAL GATE PROCESSING

Номер патента: US20130328135A1. Автор: Guo Dechao,Bu Huiming,Cai Ming,Yeh Chun-chen,Song Liyang,Ramachandran Ravikumar,Chan Kevin K.. Владелец: INTERNATIONAL BUSINESS MACHINES CORPORATION. Дата публикации: 2013-12-12.

High-K metal gate CMOS device and forming method thereof

Номер патента: CN105448831A. Автор: 库尔班·阿吾提. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2016-03-30.

Fin-shaped active area is prepared the method for high-K metal gate

Номер патента: CN103295889B. Автор: 严钧华,张明华,丁弋,方精训. Владелец: Shanghai Huali Microelectronics Corp. Дата публикации: 2016-03-02.

METHOD FOR PRODUCING MIM CAPACITORS WITH HIGH K DIELECTRIC MATERIALS AND NON-NOBLE ELECTRODES

Номер патента: US20120214288A1. Автор: . Владелец: . Дата публикации: 2012-08-23.

METHOD FOR FABRICATING TRANSISTOR WITH HIGH-K DIELECTRIC SIDEWALL SPACER

Номер патента: US20120289014A1. Автор: Lauer Isaac,Chang Leland,Sleight Jeffrey W.. Владелец: INTERNATIONAL BUSINESS MACHINES CORPORATION. Дата публикации: 2012-11-15.

Ion modification titanium dioxide ceramic material and preparation method with high-k

Номер патента: CN104478431B. Автор: 程晓静,朱建国,李振伟,肖定全,吴家刚. Владелец: Sichuan University. Дата публикации: 2017-10-10.

Cog dielectric with high k.

Номер патента: KR970001262B1. Автор: 살바토르 에이. 브루노,이안 번. Владелец: 이. 아이. 듀폰 디 네모아 앤드 캄파니. Дата публикации: 1997-02-04.

ROM CELL CIRCUIT FOR FINFET DEVICES

Номер патента: US20120001232A1. Автор: . Владелец: Taiwan Semiconductor Manufacturing Company, Ltd.. Дата публикации: 2012-01-05.

Composition of gas mixture to form tantalum nitride metal gate by plasma etch chemistry

Номер патента: RU2450385C1. Автор: Геннадий Яковлевич Красников,Олег Павлович Гущин,Андрей Владимирович Данила,Михаил Родионович Бакланов,Денис Георгиевич Шамирян. Владелец: Открытое акционерное общество "НИИ молекулярной электроники и завод "Микрон". Дата публикации: 2012-05-10.

Methods of manufacturing semiconductor devices with Si and SiGe epitaxial layers

Номер патента: US20120003799A1. Автор: . Владелец: . Дата публикации: 2012-01-05.

INTEGRATED CIRCUIT DEVICE WITH WELL CONTROLLED SURFACE PROXIMITY AND METHOD OF MANUFACTURING SAME

Номер патента: US20120001238A1. Автор: Ouyang Hui,Fan Wei-Han,Tsai Ming-Huan,Cheng Chun-Fai. Владелец: Taiwan Semiconductor Manufacturing Company, Ltd.. Дата публикации: 2012-01-05.

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