Shallow trench isolation
Номер патента: MY141557A
Опубликовано: 14-05-2010
Автор(ы): Ch Ng Toh Ghee, Chang Gi Lee, Charlie Tay, Chiew Sin Ping, Choong Shiau Chien, Hitomi Watanabe, Inki Kim, Min Paek, Naoto Inoue, Ramakrishnan Rajagopal, Sang Yeon Kim, Wan Gie Lee
Принадлежит: SilTerra Malaysia Sdn Bhd
Опубликовано: 14-05-2010
Автор(ы): Ch Ng Toh Ghee, Chang Gi Lee, Charlie Tay, Chiew Sin Ping, Choong Shiau Chien, Hitomi Watanabe, Inki Kim, Min Paek, Naoto Inoue, Ramakrishnan Rajagopal, Sang Yeon Kim, Wan Gie Lee
Принадлежит: SilTerra Malaysia Sdn Bhd
Реферат: A METHOD FOR FORMING AN ISOLATION STRUCTURE (164) ON A SEMICONDUCTOR SUBSTRATE (102) INCLUDES OPENING A PORTION OF A PAD OXIDE LAYER (104) OVERLYING THE SUBSTRATE (102) USING A PROCESS GAS INCLUDING AN ETCHANT GAS AND A POLYMER-FORMING GAS. A PORTION OF THE SUBSTRATE (102) EXPOSED BY THE OPENING STEP IS ETCHED TO FORM A TRENCH (118) HAVING A FIRST SLOPE (170) AND A SECOND SLOPE (172). THE FIRST SLOPE (170) IS GREATER THAN 45 DEGREES, AND THE SECOND SLOPE (172) IS LESS THAN 45 DEGREES. THE TRENCH (118) IS FILLED TO FORM THE ISOLATION STRUCTURE (164).
High Oxide Removal Rates Shallow Trench Isolation Chemical Mechanical Planarization Compositions
Номер патента: US20240297049A1. Автор: Xiaobo Shi,Hongjun Zhou,Krishna P. Murella,Joseph D. ROSE. Владелец: Versum Materials US LLC. Дата публикации: 2024-09-05.