레지스트 하층막용 조성물 및 이를 이용한 반도체 집적회로 디바이스의 제조방법.

레지스트 하층막용 조성물 및 이를 이용한 반도체 집적회로 디바이스의 제조방법

Номер патента: KR20110079195A
Опубликовано: 07-07-2011
Автор(ы): 고상란, 김미영, 김상균, 김종섭, 윤희찬, 정용진, 조현모
Принадлежит: 제일모직주식회사
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Рисунок 1. Взаимосвязь патентов (ближайшие 20).

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Номер патента: TW573353B. Автор: Masayuki Suzuki. Владелец: HITACHI LTD. Дата публикации: 2004-01-21.

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Номер патента: WO2005006423A1. Автор: Timothy B. Dean,William H. Lytle. Владелец: Freescale Semiconductor, Inc.. Дата публикации: 2005-01-20.

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Номер патента: EP0536747A2. Автор: David Allen Roberts,John Christopher Ivankovits,David Arthur Bohling. Владелец: Air Products and Chemicals Inc. Дата публикации: 1993-04-14.

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Номер патента: KR940012523A. Автор: 알렌 죠지 마크,아더 볼링 데이비드. Владелец: 윌리암 에프. 마쉬. Дата публикации: 1994-06-23.

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Номер патента: KR101273283B1. Автор: 히로카즈 나카지마,히로유키 이토. Владелец: 히타치 긴조쿠 가부시키가이샤. Дата публикации: 2013-06-11.

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Номер патента: CN1574319A. Автор: 坂本则明,高桥幸嗣,草野和久. Владелец: Northeast Sanyo Semi-Conductive Co Ltd. Дата публикации: 2005-02-02.

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Номер патента: US20130196159A1. Автор: Young Joo OH,Jung Rag Yoon. Владелец: Samhwa Capacitor Co Ltd. Дата публикации: 2013-08-01.

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Номер патента: SG52978A1. Автор: Ryuichi Sugimoto,Shiro Otsuzuki,Mune Iwamoto,Koji Kawano,Takayasu Ikeda,Takashi Koura. Владелец: Mitsui Chemicals Inc. Дата публикации: 1998-09-28.

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Номер патента: RU2707353C2. Автор: Микако ТАКЕНАКА,Рёдзи КОДЗИМА. Владелец: Сумитомо Раббер Индастриз, Лтд.. Дата публикации: 2019-11-26.

Curable composition including quantum dot, resin layer using the same and display device including the resin layer

Номер патента: US11773318B2. Автор: Bumjin LEE,Jinsuop YOUN,Jong Kyu Choi,Youn Je RYU,JiYoung JEONG. Владелец: Samsung SDI Co Ltd. Дата публикации: 2023-10-03.

Unsaturated MMA resin composition and manufacturing method for asphalt repair containing synthetic MMA resin and road surface construction method using the same

Номер патента: KR102475507B1. Автор: 김학재,윤상훈,김재기. Владелец: 미래피앤씨(주). Дата публикации: 2022-12-12.

HIGH SYNDIOTACTICITY POLYPROPYLENE RESIN COMPOSITIONS AND THE PREPARATION PROCESS OF THE SAME.

Номер патента: ES2063860T3. Автор: Tadashi Asanuma,Tutomu Iwatani,Katsumi Takeuchi,Tetsunosuke Shiomura,Nobutaka Uchikawa. Владелец: Mitsui Toatsu Chemicals Inc. Дата публикации: 1995-01-16.

Manufacturing processes of positive active materials for lithium secondary batteries and lithium secondary batteries comprising the same

Номер патента: EP0720247B1. Автор: Junichi Yamaura,Kazuhiro Okamura,Yoshiaki Nitta. Владелец: Matsushita Electric Industrial Co Ltd. Дата публикации: 1998-05-27.

NOVEL COORDINATION COMPLEXES AND PROCESS OF PRODUCING POLYCARBONATE BY COPOLYMERIZATION OF CARBON DIOXIDE AND EPOXIDE USING THE SAME AS CATALYST

Номер патента: US20160075824A1. Автор: Ok MyungAhn,Jeong Jisu,Lee BunYeoul,S. Sujith,Cyriac Anish,Min JaeKi,Seong JongEon. Владелец: . Дата публикации: 2016-03-17.

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Номер патента: US20140221605A1. Автор: Ok MyungAhn,Jeong Jisu,Lee BunYeoul,S. Sujith,Cyriac Anish,Min JaeKi,Seong JongEon. Владелец: SK INNOVATION CO., LTD.. Дата публикации: 2014-08-07.

NOVEL TRIDENTATE COMPLEXES AND PROCESS OF PRODUCING POLYCARBONATE BY COPOLYMERIZATION OF CARBON DIOXIDE AND EPOXIDE USING THE SAME AS CATALYST

Номер патента: US20150299239A1. Автор: Ok Myung Ahn,Sudevan Sujith,JEONG Ji Su,Na Sung Jae,Sim So Hee,JUNG Il Gu,LEE Jeon Koo,KANG Kyung Yeon,Noh Jeong Hyun,ANISH Cyriac. Владелец: . Дата публикации: 2015-10-22.

Coordination complexes containing two components in a molecule and process of producing polycarbonate by copolymerization of carbon dioxide and epoxide using the same

Номер патента: KR100853358B1. Автор: 이분열. Владелец: 아주대학교산학협력단. Дата публикации: 2008-08-21.

Novel coordination complexes and process of producing polycarbonate by copolymerization of carbon dioxide and epoxide using the same as catalyst

Номер патента: CN102701916B. Автор: 李泍烈,郑智水,玉明岸,苏吉斯苏帝文,奇拉克·阿尼什,闵栽基,成宗彦. Владелец: SK Innovation Co Ltd. Дата публикации: 2015-04-08.

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Номер патента: CA2727959A1. Автор: S. Sujith,Cyriac Anish,Myungahn Ok,Bun Yeoul Lee,Ji Su Jeong,Jea Ki Min,Jong Eon Seong. Владелец: SK Energy Co Ltd. Дата публикации: 2010-02-04.

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Номер патента: EP2019133A8. Автор: Shuhei c/o Toyo Boseki Kabushiki Kaisha YAMAMOTO,Masaru c/o Toyo Boseki Kabushiki Kaisha KITAGAWA,Michiko c/o Toyo Boseki Kabushiki Kaisha SUZUKI,Atsushi c/o Toyo Boseki Kabushiki Kaisha SOGABE,Makoto c/o National University Corporation Kochi University Faculty of Agriculture ASHIUCHI. Владелец: Toyobo Co Ltd. Дата публикации: 2009-05-20.

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Номер патента: US20050014916A1. Автор: Yasuo Tsunogae,Karl Oefele,Wolfgang Herrmann,Seiji Okada,Shintaro Ikeda,Masato Sakamoto. Владелец: Zeon Corp. Дата публикации: 2005-01-20.

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Номер патента: US20130102686A1. Автор: Furukawa Haruhiko,Hayashi Akito,Iimura Tomohiro,Tamura Seiki,Souda Tatsuo,Sawayama Sayuri. Владелец: DOW CORNING TORAY CO., LTD.. Дата публикации: 2013-04-25.

A fluorine-containing ether compound, a fluorine-containing ether composition and a coating liquid, and a substrate having a surface treatment layer and a method for producing the same (II)

Номер патента: TWI586705B. Автор: Taiki Hoshino,Eisuke Murotani. Владелец: Asahi Glass Co Ltd. Дата публикации: 2017-06-11.

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Номер патента: US20160260668A1. Автор: Hirofumi Harada. Владелец: Ablic Inc. Дата публикации: 2016-09-08.

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Номер патента: US20210375866A1. Автор: Jhon Jhy Liaw. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-12-02.

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Номер патента: US20240274605A1. Автор: Jhon Jhy Liaw. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-15.

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Номер патента: US20020140048A1. Автор: Keiichi Yamada. Владелец: Mitsubishi Electric Corp. Дата публикации: 2002-10-03.

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Номер патента: US20200381547A1. Автор: Seungmin Song,Junggil YANG,Junbeom PARK,Bongseok Suh. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-12-03.

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Номер патента: US20230290881A1. Автор: Seungmin Song,Junggil YANG,Junbeom PARK,Bongseok Suh. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-09-14.

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Номер патента: US20220093786A1. Автор: Seungmin Song,Junggil YANG,Junbeom PARK,Bongseok Suh. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-03-24.

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Номер патента: US20090261315A1. Автор: Haruki Toda,Akiko Nara. Владелец: Toshiba Corp. Дата публикации: 2009-10-22.

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Номер патента: US20240196603A1. Автор: Sungyeon KIM,Munjun KIM,Hyukwoo KWON,Younseok CHOI,Kwanghee CHEON. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-06-13.

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Номер патента: WO1998000872A1. Автор: Derryl D. J. Allman,John W. Gregory,James P. Yakura,John J. Seliskar,Dim Lee Kwong. Владелец: Gill, David, Alan. Дата публикации: 1998-01-08.

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Номер патента: US20240234485A1. Автор: Hyun-Suk Lee,Jun-Goo Kang,Gi-hee CHO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-11.

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Номер патента: US20240234254A9. Автор: Junho Huh,Bongwee YU. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-11.

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Номер патента: US20240023336A1. Автор: Kangmin KIM,Seungje OH,Joohang Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-01-18.

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Номер патента: EP4307858A9. Автор: Kangmin KIM,Seungje OH,Joohang Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-03-13.

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Номер патента: US20210057339A1. Автор: ChoongHyun Lee,Youngju LEE,Joonyong Choe. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-02-25.

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Номер патента: US20090065889A1. Автор: Yasuyo Sogawa. Владелец: Individual. Дата публикации: 2009-03-12.

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Номер патента: US20240304666A1. Автор: Seunghun LEE,Jinbum Kim,Gyeom KIM,Hyojin Kim,Haejun YU,Kyungin Choi. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-09-12.

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Номер патента: US20240321732A1. Автор: ChoongHyun Lee,Youngju LEE,Joonyong Choe. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-09-26.

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Номер патента: US20020195669A1. Автор: Kazutami Arimoto,Toshinori Morihara,Hiroki Shimano. Владелец: Individual. Дата публикации: 2002-12-26.

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Номер патента: US20240234312A1. Автор: Wandon Kim,Euibok LEE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-11.

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Номер патента: US10217689B2. Автор: Ippei YASUTAKE. Владелец: ROHM CO LTD. Дата публикации: 2019-02-26.

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Номер патента: US20170207140A1. Автор: Ippei YASUTAKE. Владелец: ROHM CO LTD. Дата публикации: 2017-07-20.

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Номер патента: US20200118920A1. Автор: Seok-Han Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-04-16.

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Номер патента: US20200243532A1. Автор: Sung-hee Han,Yoo-Sang Hwang,Bong-Soo Kim,Hui-jung Kim,Ki-Seok Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-07-30.

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Номер патента: US20200395436A1. Автор: Jooho Lee,Younsoo Kim,Kyooho JUNG,Jeonggyu SONG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-12-17.

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Номер патента: US20240284686A1. Автор: Hyunho Kim,Jeehoon HAN,Kyeonghoon Park,Jaebok BAEK,Janggn Yun. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-08-22.

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Номер патента: US12062540B2. Автор: Chih-I Wu,Jin-Bin Yang,Ya-Ting Chang,Jian-Zhi Huang,I-Chih NI. Владелец: National Taiwan University NTU. Дата публикации: 2024-08-13.

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Номер патента: US12075622B2. Автор: Haemin LEE,Hyeonjoo SONG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-08-27.

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Номер патента: US11769769B2. Автор: Heon-Jong Shin,Hwi-Chan JUN,In-chan HWANG,Jae-Ran JANG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-09-26.

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Номер патента: US10256237B2. Автор: Hyun-Jung Lee,Seung-Hun Lee,Jeong-Yun Lee,Myung-Il Kang,Sun-Wook Kim,Sun-Ghil Lee,Jung-han Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-04-09.

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Номер патента: US20240194768A1. Автор: Taegon Kim,Gilhwan Son,Jihye Yi,Sihyung Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-06-13.

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Номер патента: EP4432807A1. Автор: Hyunho Kim,Jeehoon HAN,Kyeonghoon Park,Jaebok BAEK,Janggn Yun. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-09-18.

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Номер патента: US20240324188A1. Автор: Kyounghwan Kim,Sangbin AHN,Kangin KIM,Youngseung Cho. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-09-26.

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Номер патента: US20240321980A1. Автор: Seunghyun Hwang,Heonjong Shin,Doohyun Lee,Jaehyun KANG,Seonbae KIM,Wangseop Lim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-09-26.

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Номер патента: US20240274598A1. Автор: Jinwoo Lee,Hojun CHOI,Sutae Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-08-15.

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Номер патента: US11955486B2. Автор: Jhon Jhy Liaw. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-04-09.

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Номер патента: US20190140066A1. Автор: Sang-Jin Hyun,Hoon-joo Na,Byoung-Hoon Lee,Sung-in SUH,Min-Woo Song,Chan-hyeong LEE,Hu-Yong Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-05-09.

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Номер патента: US20160071874A1. Автор: Kotaro Noda. Владелец: Toshiba Corp. Дата публикации: 2016-03-10.

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Номер патента: US20020024045A1. Автор: Hiroshi Furuta,Yoko Hayashida,Kiminori Hayano. Владелец: Individual. Дата публикации: 2002-02-28.

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Номер патента: US9831176B2. Автор: Hirofumi Harada. Владелец: Ablic Inc. Дата публикации: 2017-11-28.

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Номер патента: EP4372814A1. Автор: Jong Tae Hwang. Владелец: Wellang Co Ltd. Дата публикации: 2024-05-22.

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Номер патента: US20150076682A1. Автор: Yu-Lin Chao,Sheng-Tsai Wu,Wei-Chung Lo,John H. Lau,Heng-Chieh Chien. Владелец: Industrial Technology Research Institute ITRI. Дата публикации: 2015-03-19.

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Номер патента: US11956967B2. Автор: Sunggil Kim,Kyengmun KANG,Hyeeun HONG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-04-09.

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Номер патента: US9543401B2. Автор: Young Ho Lee,Jin Ha Kim,Kang Sik Choi,Jun Kwan Kim,Su Jin Chae. Владелец: SK hynix Inc. Дата публикации: 2017-01-10.

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Номер патента: US20100200907A1. Автор: Chan-Hee Park,Eun-ha Lee,Ki-Hyun Hwang,Hyung-ik Lee,Sung Heo,Han-mei Choi,Dong Chul Yoo,Byong-ju Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2010-08-12.

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Номер патента: US20240015949A1. Автор: Jinwook Lee,Wonsik Choi,Yeseul LEE,Kyooho JUNG,Jongyeong MIN,Jiye BAEK. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-01-11.

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Номер патента: EP4307858A1. Автор: Kangmin KIM,Seungje OH,Joohang Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-01-17.

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Номер патента: US11961914B2. Автор: Seungmin Song,Junggil YANG,Junbeom PARK,Bongseok Suh. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-04-16.

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Номер патента: US11784122B2. Автор: ChoongHyun Lee,Youngju LEE,Joonyong Choe. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-10-10.

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Номер патента: US20210273041A1. Автор: Hyun-Suk Lee,Jun-Goo Kang,Gi-hee CHO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-09-02.

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Номер патента: US12009387B2. Автор: Hyun-Suk Lee,Jun-Goo Kang,Gi-hee CHO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-06-11.

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Номер патента: US12027459B2. Автор: ChoongHyun Lee,Youngju LEE,Joonyong Choe. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-02.

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Номер патента: US20240258222A1. Автор: Jongkook Kim,Chengtar WU,ChoongBin YIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-08-01.

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Номер патента: US10276505B2. Автор: Woo-Jin Lee,Young-Bae Kim,Sung-Jin Kang,Sang-hoon Ahn,Eui-bok LEE,Su-Hyun Bark,Hyeok-Sang Oh,Hoon-Seok Seo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-04-30.

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Номер патента: US11804549B2. Автор: Hyun-chul Lee,Yun-Seung Kang,Sang-Gyo Chung,Ji-seung LEE,Soung-hee LEE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-10-31.

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Номер патента: US20240063200A1. Автор: Dimin Niu,Hongzhong Zheng,Shuangchen Li,Tianchan GUAN. Владелец: Alibaba Group Holding Ltd. Дата публикации: 2024-02-22.

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Номер патента: US20230117072A1. Автор: Namhoon Kim,Chajea JO,Hyoeun Kim,Seunghoon Yeon,Ohguk KWON. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-04-20.

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Номер патента: EP4344376A1. Автор: KiSoo Park,Daeyoung MOON,Jamin KOO,Kyuwan KIM,Hyokyoung Kim,Jonghyeok Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-03-27.

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Номер патента: US20210082844A1. Автор: Dongwoo Kim,Byoungdeog Choi,Hyukwoo KWON,Seongmin CHOO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-03-18.

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Номер патента: US20210407890A1. Автор: Namhoon Kim,Chajea JO,Hyoeun Kim,Seunghoon Yeon,Ohguk KWON. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-12-30.

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Номер патента: US11887913B2. Автор: Namhoon Kim,Chajea JO,Hyoeun Kim,Seunghoon Yeon,Ohguk KWON. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-01-30.

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Номер патента: US20240105791A1. Автор: KiSoo Park,Daeyoung MOON,Jamin KOO,Kyuwan KIM,Hyokyoung Kim,Jonghyeok Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-03-28.

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Номер патента: US20160284637A1. Автор: Qing Ma,Robert L. Sankman,Valluri R. Rao,Johanna M. Swan,Quan A. Tran. Владелец: Individual. Дата публикации: 2016-09-29.

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Номер патента: US11315926B2. Автор: Yuri Lee,Sungmin Kim,Deokhan Bae,Juhun PARK,Yoonyoung Jung,Sooyeon Hong. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-04-26.

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Номер патента: US20110309515A1. Автор: Kenji Yokoyama. Владелец: Panasonic Corp. Дата публикации: 2011-12-22.

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Номер патента: US20090209078A1. Автор: Hideki Yasuoka,Susumu Ishida,Masami Kouketsu,Kazunari Saitou. Владелец: Renesas Technology Corp. Дата публикации: 2009-08-20.

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Номер патента: US11929393B2. Автор: Hyunsuk Lee,Gihee CHO,Jungoo Kang,Sanghyuck Ahn. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-03-12.

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Номер патента: US20200312809A1. Автор: Chung-Chang Lin,Ching-Kuang Wang. Владелец: Realtek Semiconductor Corp. Дата публикации: 2020-10-01.

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Номер патента: US20220077285A1. Автор: Hyung-Suk Lee,Sung-Il Park,Jae-Hyun Park,Cheol Kim,Yong-Ho Jeon,Kye-Hyun Baek,Yun-Il Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-03-10.

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Номер патента: US20170309568A1. Автор: Jae-Hwang Sim,Ho-Jun SEONG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-10-26.

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Номер патента: US20230009266A1. Автор: Chih-I Wu,Jin-Bin Yang,Ya-Ting Chang,Jian-Zhi Huang,I-Chih NI. Владелец: National Taiwan University NTU. Дата публикации: 2023-01-12.

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Номер патента: US20150255483A1. Автор: Kotaro Noda. Владелец: Toshiba Corp. Дата публикации: 2015-09-10.

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Номер патента: US20210082914A1. Автор: Minhee Choi,Jungtaek Kim,Pankwi Park,Ryong Ha,Moonseung YANG,Dongchan Suh,Seojin JEONG,Seungryul LEE,Yongseung KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-03-18.

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Номер патента: US20200303521A1. Автор: Nak-Jin Son,Dong-il Bae. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-09-24.

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Номер патента: US20240107779A1. Автор: Hyunmog Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-03-28.

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Номер патента: US20150162281A1. Автор: Hiromitsu Mashita,Yoshiko Kato. Владелец: Toshiba Corp. Дата публикации: 2015-06-11.

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Номер патента: US20210143156A1. Автор: Jaehoon Kim,Hyunji SONG,Gyeonghee LEE,Seungjae Jung,Kwangho Park,Yonghoon Son. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-05-13.

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Номер патента: US20190123051A1. Автор: Seok-Han Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-04-25.

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Номер патента: US20210343859A1. Автор: Nak-Jin Son,Dong-il Bae. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-11-04.

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Номер патента: US20180019336A1. Автор: Sang Yong Kim,Dong Yean Oh. Владелец: SK hynix Inc. Дата публикации: 2018-01-18.

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Номер патента: US20220149040A1. Автор: Minhee Choi,Jungtaek Kim,Pankwi Park,Ryong Ha,Moonseung YANG,Dongchan Suh,Seojin JEONG,Seungryul LEE,Yongseung KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-05-12.

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Номер патента: US20240107775A1. Автор: Jihong Kim,Hyunmook Choi,Hyunmog Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-03-28.

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Номер патента: US20190198497A1. Автор: Hyun-Jung Lee,Seung-Hun Lee,Jeong-Yun Lee,Myung-Il Kang,Sun-Wook Kim,Sun-Ghil Lee,Jung-han Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-06-27.

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Номер патента: US9978881B2. Автор: Mirco Cantoro,Maria TOLEDANO LUQUE,Yeon-Cheol Heo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-05-22.

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Номер патента: US20240206159A1. Автор: Jinseong Lee,Hyunjung Lee,Junsoo Kim,Dongsik Kong,Junbum Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-06-20.

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Номер патента: EP4391074A1. Автор: Jinseong Lee,Hyunjung Lee,Junsoo Kim,Dongsik Kong,Junbum Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-06-26.

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Номер патента: US20190122980A1. Автор: Seok-Han Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-04-25.

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Номер патента: US20190189617A1. Автор: Sung-hee Han,Yoo-Sang Hwang,Bong-Soo Kim,Hui-jung Kim,Ki-Seok Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-06-20.

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Номер патента: US12034043B2. Автор: Seunghun LEE,Jinbum Kim,Gyeom KIM,Hyojin Kim,Haejun YU,Kyungin Choi. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-09.

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Номер патента: US20200091279A1. Автор: Hyun-Jun Kim,Su-Hwan Kim,Young-Lim Park,Seong-Yul PARK,Sun-min MOON,Jae-Wan Chang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-03-19.

BI-CMOS gate array semiconductor integrated circuits and internal cell structure involved in the same

Номер патента: US5497014A. Автор: Takayuki Momose. Владелец: NEC Corp. Дата публикации: 1996-03-05.

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Номер патента: US20040235238A1. Автор: Je-min Park. Владелец: Individual. Дата публикации: 2004-11-25.

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Номер патента: US20220344199A1. Автор: Teng-Chun Tsai,Shuen-Shin Liang,Keng-Chu Lin,Chih-tang Peng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-10-27.

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Номер патента: US11664379B2. Автор: Jaehyun Lee,Jonghan LEE,Jongha PARK,Seonghwa Park,Jaehoon WOO,Dabok Jeong. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-05-30.

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Номер патента: US20240170476A1. Автор: Jong Tae Hwang. Владелец: Wellang Co Ltd. Дата публикации: 2024-05-23.

Process of manufacturing a three dimensional integrated circuit from stacked SOI wafers using a temporary silicon substrate

Номер патента: US5426072A. Автор: Ronald M. Finnila. Владелец: Hughes Aircraft Co. Дата публикации: 1995-06-20.

Integrated circuit including standard cells and methodof designing the same

Номер патента: US20230307436A1. Автор: Minjae Jeong,Jungho DO,Sanghoon Baek,Jonghoon Jung,Taejoong Song,Jisu YU,Hyeongyu You. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-09-28.

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Номер патента: US11824012B2. Автор: Kai-Ming Yang,John Hon-Shing Lau,Chia-Yu Peng. Владелец: Unimicron Technology Corp. Дата публикации: 2023-11-21.

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Номер патента: US20200235126A1. Автор: Chang-Beom Kim,Tae-Joong Song,Ha-young Kim,Hyun-Jeong Roh,Dal-Hee LEE,Sung-We Cho. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-07-23.

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Номер патента: CA2273474C. Автор: Katsumi Ebara,Mikio Okamoto. Владелец: Shindengen Electric Manufacturing Co Ltd. Дата публикации: 2008-09-09.

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Номер патента: WO2004109794A2. Автор: Robert S. Howell,Harvey Nathanson,Garrett A. Storaska. Владелец: NORTHROP GRUMMAN CORPORATION. Дата публикации: 2004-12-16.

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Номер патента: EP1636837A2. Автор: Robert S. Howell,Harvey Nathanson,Garrett A. Storaska. Владелец: Northrop Grumman Corp. Дата публикации: 2006-03-22.

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Номер патента: WO2004109794B1. Автор: Harvey Nathanson,Garrett A Storaska,Robert S Howell. Владелец: Northrop Grumman Corp. Дата публикации: 2005-09-01.

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Номер патента: US11945957B2. Автор: Pradeep Thalappil,Jakka Ravindran Swathy,Avijit BAIDYA,Mohd. Azhardin Ganayee. Владелец: INDIAN INSTITUTE OF TECHNOLOGY MADRAS. Дата публикации: 2024-04-02.

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Номер патента: EP1943279A4. Автор: Kyung-hyun Kim,Chan-Hee Lee,Yoonjeong Baek,Hyunkyou Ha. Владелец: LG Chem Ltd. Дата публикации: 2011-08-03.

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Номер патента: US20080074913A1. Автор: Hiroyuki Yamauchi. Владелец: Matsushita Electric Industrial Co Ltd. Дата публикации: 2008-03-27.

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Номер патента: RU2438701C2. Автор: Мартин БАХМАНН,Ален ТИССО,Патрик МАУРЕР,Вольфганг А. РЕННЕР,Франциска ЛЕХНЕР,Петер ЗЕББЕЛЬ,Кристине ПИОССЕК. Владелец: Цитос Байотекнолоджи Аг. Дата публикации: 2012-01-10.

Integrated circuit, memory device and method of manufacturing the same

Номер патента: US12063785B2. Автор: Chih-Wei Hung,Kuo-Pin Chang,Chien Hung Liu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-13.

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Номер патента: US20020089389A1. Автор: Takashi Hasegawa. Владелец: Murata Manufacturing Co Ltd. Дата публикации: 2002-07-11.

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Номер патента: WO2011019095A1. Автор: Young Jin Kwon,Jung Ho Kim,Ja Woon Gu,Won Hyung Park,Su Bong Kim,Cheol Min Shin,Byoung Kyu Ji,Doo Hyo Kwon,Sung Yeol Park. Владелец: N-BARO TECH CO., LTD. Дата публикации: 2011-02-17.

Method of producing gel negative electrode for alkaline battery and apparatus for producing the same

Номер патента: US7332000B2. Автор: Shigeto Noya,Yasuo Mukai,Kenji Shiotani,Hideki Misaki. Владелец: Nissui Chemicals Co Ltd. Дата публикации: 2008-02-19.

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Номер патента: US20230216159A1. Автор: Seung Ryul Choi. Владелец: SK On Co Ltd. Дата публикации: 2023-07-06.

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Номер патента: EP4344377A1. Автор: Inseok Baek,Dongwon Lim,Sangbin AHN,Seokyeong CHOI,Seungyong HONG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-03-27.

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Номер патента: US20240107753A1. Автор: Inseok Baek,Dongwon Lim,Sangbin AHN,Seokyeong CHOI,Seungyong HONG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-03-28.

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Номер патента: US20240196618A1. Автор: JaeMin JUNG,Byongju Kim,Wonjun PARK,Donghwa LEE,Changheon Cheon,Dongsung Choi. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-06-13.

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Номер патента: CA2211934C. Автор: Hidenori Kumobayashi,Takashi Miura,Nobuo Seido,Yoshifumi Yuasa,Tsukasa Sotoguchi,Takenobu Nishikawa. Владелец: Takasago International Corp. Дата публикации: 2005-10-18.

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Номер патента: US5859249A. Автор: Hidenori Kumobayashi,Takashi Miura,Nobuo Seido,Yoshifumi Yuasa,Tsukasa Sotoguchi,Takenobu Nishikawa. Владелец: Takasago International Corp. Дата публикации: 1999-01-12.

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Номер патента: US7527898B2. Автор: Shigeto Noya,Yasuo Mukai,Kenji Shiotani,Hideki Misaki. Владелец: Panasonic Corp. Дата публикации: 2009-05-05.

High-frequency circuit device and method for manufacturing the same

Номер патента: US20030042144A1. Автор: Tadashi Isono,Terumi Nakazawa,Yoshiyuki Sasada,Mamoru Ohba,Shirou Oouchi. Владелец: HITACHI LTD. Дата публикации: 2003-03-06.

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Номер патента: US20200183472A1. Автор: Soon Keol RYU. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-06-11.

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Номер патента: WO2021191796A1. Автор: Himanshu Brahmbhatt,Jennifer Macdiarmid. Владелец: EnGeneIC Molecular Delivery Pty Ltd. Дата публикации: 2021-09-30.

Nonreciprocal circuit device and communications apparatus incorporating the same

Номер патента: US6603369B2. Автор: Takashi Hasegawa,Katsuyuki Ohira. Владелец: Murata Manufacturing Co Ltd. Дата публикации: 2003-08-05.

Nonreciprocal circuit device and communication apparatus incorporating the same

Номер патента: US20020153963A1. Автор: Takashi Kawanami. Владелец: Murata Manufacturing Co Ltd. Дата публикации: 2002-10-24.

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Номер патента: US20020030549A1. Автор: Toshihito Umegaki. Владелец: Murata Manufacturing Co Ltd. Дата публикации: 2002-03-14.

Nonreciprocal circuit device and manufacturing method of the same

Номер патента: US20080218289A1. Автор: Takaya Wada. Владелец: Murata Manufacturing Co Ltd. Дата публикации: 2008-09-11.

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Номер патента: US20240302747A1. Автор: Mamoru Tamura,Hiroto Ogata,Ryuta Mizuochi,Tomotada HIROHARA. Владелец: Nissan Chemical Corp. Дата публикации: 2024-09-12.

Semiconductor integrated circuit device, and method for producing the same, and method of producing masks

Номер патента: CN1191610C. Автор: 福田宏. Владелец: HITACHI LTD. Дата публикации: 2005-03-02.

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Номер патента: US20160377973A1. Автор: Sang-Hyun Kim,Seong-Sue Kim,Dong-gun Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-12-29.

Manufacturing method or an exposing method for a semiconductor device or a semiconductor integrated circuit device and a mask used therefor

Номер патента: US5736300A. Автор: Fumio Mizuno,Masayuki Morita,Noboru Moriuchi,Seiichiro Shirai. Владелец: Hitachi ULSI Engineering Corp. Дата публикации: 1998-04-07.

Color photosensitive resin composition, method of forming a pattern, method of producing a color filter, and color filter and display device having the same

Номер патента: TWI495953B. Автор: Hideyuki Nakamura,Kenta Yamazaki,Koutaro Okabe. Владелец: Fujifilm Corp. Дата публикации: 2015-08-11.

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Номер патента: US20160238936A1. Автор: Sakamoto Rikimaru,FUJITANI Noriaki,Ohnishi Ryuji,NISHITA Tokio. Владелец: NISSAN CHEMICAL INDUSTRIES, LTD.. Дата публикации: 2016-08-18.

Resist underlayer film monomer, composition and pattern forming method

Номер патента: CN110105301B. Автор: 王静,肖楠. Владелец: Fujian Shuguang Semiconductor Materials Co ltd. Дата публикации: 2023-06-27.

Novel tetranuclear methine dyes, processes for preparing the same, and electrophotographic systems and silver halide emulsions containing the same

Номер патента: US3687946A. Автор: Shi-Kuang Yao. Владелец: GAF Corp. Дата публикации: 1972-08-29.

Electronic circuit device and method for fabricating the same

Номер патента: WO2008016061A1. Автор: Kenji Tanaka,Hiroshi Sakamoto,Koji Nakagawa,Satoru Takaki,Reo USUI,Kenichi Ebata,Ryohei Satoh,Eiji Morinaga. Владелец: ASAHI GLASS CO., LTD.. Дата публикации: 2008-02-07.

Optical integrated circuit device, fabrication method of the same and module of optical communication transmission and receiving apparatus using the same

Номер патента: US20030153117A1. Автор: Ki Shin. Владелец: Iljin Corp. Дата публикации: 2003-08-14.

Optical integrated circuit device, fabrication method of the same and module of optical communication transmission and receiving apparatus using the same

Номер патента: WO2002042811A1. Автор: Ki Chul Shin. Владелец: Iljin Corporation. Дата публикации: 2002-05-30.

Semiconductor integrated circuit and method of producing the same

Номер патента: US20150194436A1. Автор: SEO Moon-Sik,Tetsuo Endoh. Владелец: Tohoku University NUC. Дата публикации: 2015-07-09.

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Номер патента: US20180350905A1. Автор: Ho-In Lee,Je-min Park,Chan-Sic Yoon,Ki-Seok Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-12-06.

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Номер патента: KR100402222B1. Автор: 이가라시무쯔노리,무라까따마사미,미쯔하시다까시,야마다마사아끼,미나미후미히로,이시오까다까시. Владелец: 가부시끼가이샤 도시바. Дата публикации: 2003-11-13.

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Номер патента: US20180069169A1. Автор: Kaneda Yuji,OTA Akihiro,Mizushima Yuzo,Niwa Isao. Владелец: . Дата публикации: 2018-03-08.

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Номер патента: US20180166515A1. Автор: AN Changho,KIM Byungil. Владелец: LG DISPLAY CO., LTD.. Дата публикации: 2018-06-14.

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Номер патента: US20200173959A1. Автор: Tan Shyue Seng,Toh Eng Huat,LIU BIN,Quek Kiok Boone Elgin. Владелец: . Дата публикации: 2020-06-04.

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Номер патента: US20170236814A1. Автор: WON Hyo-Sig,RYU SEONG-MIN. Владелец: . Дата публикации: 2017-08-17.

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Номер патента: US20180261590A1. Автор: WON Hyo-Sig,RYU SEONG-MIN. Владелец: . Дата публикации: 2018-09-13.

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Номер патента: JPH1070243A. Автор: 朋美桃原,Tomoyoshi Momohara. Владелец: Toshiba Corp. Дата публикации: 1998-03-10.

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Номер патента: KR100907020B1. Автор: 김용주,한성우,김형수,송희웅,장재민,이지왕,박창근,오익수,최해랑,황태진. Владелец: 주식회사 하이닉스반도체. Дата публикации: 2009-07-08.

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Номер патента: DE102019120292B4. Автор: Minsu Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-03-17.

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Номер патента: US7106108B2. Автор: Seiji Endou,Shigetoshi Wakayama,Mitsuaki Igeta. Владелец: Fujitsu Ltd. Дата публикации: 2006-09-12.

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Номер патента: US4246595A. Автор: Hiroaki Fujimoto,Masaharu Noyori. Владелец: Matsushita Electric Industrial Co Ltd. Дата публикации: 1981-01-20.

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Номер патента: KR100201183B1. Автор: Shigeru Takahashi,Yutaka Kobayashi,Naotaka Hashimoto,Shuji Ikeda,Satoshi Meguro,Soichiro Hashiba,Isamu Kuramoto,Atsuyoshi Koike,Katsuro Sasaki,Koichiro Ishibashi,Toshiaki Yamanaka,Nobuyuki Moriwaki,Atsushi Hiraishi,Seigo Yukutake. Владелец: HITACHI LTD. Дата публикации: 1999-06-15.

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Номер патента: JP2581411B2. Автор: 和弘田坂. Владелец: Nippon Electric Co Ltd. Дата публикации: 1997-02-12.

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Номер патента: CN101404861B. Автор: 杉本圭一,中川充. Владелец: Denso Corp. Дата публикации: 2014-06-04.

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Номер патента: CN101178783B. Автор: 坂间功,芦泽实. Владелец: HITACHI LTD. Дата публикации: 2010-06-02.

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Номер патента: KR100848748B1. Автор: 이사오 사까마,미노루 아시자와. Владелец: 가부시키가이샤 히타치세이사쿠쇼. Дата публикации: 2008-07-25.

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Номер патента: TWI332633B. Автор: Minoru Ashizawa,Isao Sakama. Владелец: HITACHI LTD. Дата публикации: 2010-11-01.

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Номер патента: US8211598B2. Автор: Tomotaka Tsuchimura,Kazuto Shimada,Hiroshi Taguchi,Yoichi Maruyama,Hiroyuki Einaga. Владелец: Fujifilm Corp. Дата публикации: 2012-07-03.

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Номер патента: US20240324190A1. Автор: Yeji Kim,Jooncheol Kim,Subin SON,Yunho Song,Namkyeong LEE,Bosu KIM,Hyundon YUN. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-09-26.

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Номер патента: US20240306375A1. Автор: Kyungwook Park,Yoongoo Kang,Changwoo Seo,Suyoun SONG,Youmin Ban,Hyunchul Shim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-09-12.

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Номер патента: US20240023306A1. Автор: Jongin KANG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-01-18.

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Номер патента: US20240130115A1. Автор: Hoju Song. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-04-18.

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Номер патента: US12088232B2. Автор: Haruhiko Tan,Masahiko Sumitomo. Владелец: Kawasaki Jukogyo KK. Дата публикации: 2024-09-10.

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Номер патента: US20160010141A1. Автор: Horn Carina,Haar Hans-Peter,GAESSLER-DIETSCHE Claudia. Владелец: ROCHE DIABETES CARE, INC.. Дата публикации: 2016-01-14.

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Номер патента: US20080083506A1. Автор: Jun Nakamura,Kentaro Yoshida,Nobuyuki Okuda,Hideaki Awata,Katsuji Emura. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2008-04-10.

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Номер патента: KR100615282B1. Автор: 김기정. Владелец: 삼성에스디아이 주식회사. Дата публикации: 2006-08-25.

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Номер патента: EP0533475A2. Автор: Shouichi c/o Fujitsu Limited Ogita,Toshio c/o Fujitsu Limited Higashi. Владелец: Fujitsu Ltd. Дата публикации: 1993-03-24.

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Номер патента: EP1324103A2. Автор: Akito C/O Fujitsu Limited Kuramata. Владелец: Fujitsu Ltd. Дата публикации: 2003-07-02.

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Номер патента: KR100862890B1. Автор: 최성웅. Владелец: 산양전기주식회사. Дата публикации: 2008-10-13.

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Номер патента: US20040019826A1. Автор: Tsutomu Mikami,Atsushi Ubukata,Motohide Nishibata,Takio Yamashita,Kouichirou Miyawaki. Владелец: Matsushita Electric Industrial Co Ltd. Дата публикации: 2004-01-29.

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Номер патента: US20130300726A1. Автор: Yeong Joon Son,Myung Yu KIM. Владелец: Silicon Works Co Ltd. Дата публикации: 2013-11-14.

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Номер патента: US20180252772A1. Автор: JIN Pan,John M. Peterson,David Shia,Pooya Tadayon,Abram M. Detofsky,Evan M. Fledell,Mustapha A. Abdulai,Dinia P. Kitendaugh. Владелец: Intel Corp. Дата публикации: 2018-09-06.

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Номер патента: US10677845B2. Автор: JIN Pan,John M. Peterson,David Shia,Pooya Tadayon,Abram M. Detofsky,Evan M. Fledell,Mustapha A. Abdulai,Dinia P. Kitendaugh. Владелец: Intel Corp. Дата публикации: 2020-06-09.

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Номер патента: US20240201524A1. Автор: Jung Jin Ju,Hyeon Hwang,Hansuek Lee,Kiwon MOON,Min-Kyo Seo. Владелец: Korea Advanced Institute of Science and Technology KAIST. Дата публикации: 2024-06-20.

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Номер патента: EP1742172A4. Автор: Tatsumi Sumi,George Nakane. Владелец: Panasonic Corp. Дата публикации: 2009-07-15.

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Номер патента: US20090168539A1. Автор: Tomonori Hayashi. Владелец: Elpida Memory Inc. Дата публикации: 2009-07-02.

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Номер патента: US20100148816A1. Автор: Kenji Ijitsu. Владелец: Fujitsu Ltd. Дата публикации: 2010-06-17.

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Номер патента: US20230010159A1. Автор: Jin Hyeong Park,In Hak HAN. Владелец: Baum Design Systems Co Ltd. Дата публикации: 2023-01-12.

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Номер патента: US20110292024A1. Автор: Young-Min Choi,Jae-Youl Lee,Dong-Hoon Baek,Han-Su Pae. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2011-12-01.

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Номер патента: US20050120324A1. Автор: Keisuke Kanamaru. Владелец: NEC Corp. Дата публикации: 2005-06-02.

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Номер патента: US20050047236A1. Автор: Toshiaki Kawasaki,Masashi Agata,Masanori Shirahama,Ryuji Nishihara. Владелец: Matsushita Electric Industrial Co Ltd. Дата публикации: 2005-03-03.

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Номер патента: US11755097B2. Автор: Jin Hyeong Park,In Hak HAN. Владелец: Baum Design Systems Co Ltd. Дата публикации: 2023-09-12.

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Номер патента: US7752517B2. Автор: Takeshi Onodera. Владелец: Sony Corp. Дата публикации: 2010-07-06.

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Номер патента: US20070088996A1. Автор: Takeshi Onodera. Владелец: Sony Corp. Дата публикации: 2007-04-19.

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Номер патента: US20090159952A1. Автор: Bo-Un Yoon,Chang-ki Hong,Jun-Yong Kim,Byoung-Ho Kwon. Владелец: Individual. Дата публикации: 2009-06-25.

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Номер патента: US20080017915A1. Автор: Bo-Un Yoon,Chang-ki Hong,Jun-Yong Kim,Byoung-Ho Kwon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2008-01-24.

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Номер патента: US20140287589A1. Автор: Sakamoto Rikimaru,FUJITANI Noriaki,Endo Takafumi. Владелец: . Дата публикации: 2014-09-25.

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Номер патента: US20200403096A1. Автор: Seon Bae Kim,Seung Hyun Song,Young Chai Jung. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-12-24.

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Номер патента: MY115683A. Автор: John Edward Cronin,Barbara Jean Luther. Владелец: Ibm. Дата публикации: 2003-08-30.

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Номер патента: US20020135028A1. Автор: Akio Kitamura. Владелец: Fuji Electric Co Ltd. Дата публикации: 2002-09-26.

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Номер патента: US7943426B2. Автор: Lu-Chen Hwan. Владелец: Mutual Pak Technology Co Ltd. Дата публикации: 2011-05-17.

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Номер патента: US12015023B2. Автор: Chen-Hua Yu,Shang-Yun Hou,Hsien-Pin Hu,Hsing-Kuo Hsia,Ying-Ching Shih,Chin-Fu Kao,Sung-Hui Huang,Kuan-Yu Huang,Chi-Hsi Wu,Li-Chung Kuo,Wen-Hsin Wei,Heh-Chang Huang,Yushun Lin,Chih-Chieh Hung. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-06-18.

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Номер патента: US6592380B2. Автор: Taiji Hosaka,Masaaki Miyazawa. Владелец: JST Mfg Co Ltd. Дата публикации: 2003-07-15.

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Номер патента: US5494844A. Автор: Hisamitsu Suzuki. Владелец: NEC Corp. Дата публикации: 1996-02-27.

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Номер патента: US11810831B2. Автор: Chen-Hua Yu,Chih-Wei Wu,Ying-Ching Shih,Szu-Wei Lu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-07.

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Номер патента: TW201220963A. Автор: Sadamichi Takakusaki. Владелец: ON SEMICONDUCTOR TRADING LTD. Дата публикации: 2012-05-16.

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Номер патента: US20030001263A1. Автор: Weimin Li. Владелец: Individual. Дата публикации: 2003-01-02.

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Номер патента: US5940720A. Автор: Jun-Pyo Hong. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 1999-08-17.

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Номер патента: US20180277547A1. Автор: Myeong-Cheol Kim,Ja-hum Ku,Jin-Wook Lee,Sung-Kee Han,Hong-bae Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-09-27.

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Номер патента: US20020109222A1. Автор: Kun-Ming Huang,Ya-Yi Lai. Владелец: Siliconware Precision Industries Co Ltd. Дата публикации: 2002-08-15.

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Номер патента: TW200518289A. Автор: Kun-Chen Tsai. Владелец: Phoenix Prec Technology Corp. Дата публикации: 2005-06-01.

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Номер патента: TW472376B. Автор: Jr-Hung Chen,Jr-Cheng Wu,Meng-Nan He,Yan-Cheng Huang,Li-Huan Chen. Владелец: Kingpak Tech Inc. Дата публикации: 2002-01-11.

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Номер патента: US10672716B2. Автор: Michael Roesner,Gudrun Stranzl,Martin Zgaga,Manfred Engelhardt. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2020-06-02.

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Номер патента: US20110121365A1. Автор: Tomio Yamada,Shinji Moriyama. Владелец: Renesas Electronics Corp. Дата публикации: 2011-05-26.

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Номер патента: US5229638A. Автор: Yuji Ito. Владелец: Seiko Epson Corp. Дата публикации: 1993-07-20.

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Номер патента: US8084852B2. Автор: Tomio Yamada,Shinji Moriyama. Владелец: Renesas Electronics Corp. Дата публикации: 2011-12-27.

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Номер патента: US20230411291A1. Автор: Jhon Jhy Liaw. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-12-21.

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Номер патента: US20240071952A1. Автор: Ching-Hua Hsieh,Hsiu-Jen Lin,Chih-Chiang Tsao,Hsuan-Ting Kuo,Chao-Wei Chiu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-02-29.

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Номер патента: US20120153370A1. Автор: Hiroshi Furuta,Takayuki Shirai,Shunsaku Naga. Владелец: Renesas Electronics Corp. Дата публикации: 2012-06-21.

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Номер патента: US20130285203A1. Автор: Hiroi Masayuki,SAKOH Takashi. Владелец: RENESAS ELECTRONICS CORPORATION. Дата публикации: 2013-10-31.

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Номер патента: US20180019336A1. Автор: OH Dong Yean,KIM Sang Yong. Владелец: . Дата публикации: 2018-01-18.

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Номер патента: US20170033013A1. Автор: KIM Weon-Hong,Song Moon-Kyun,LEE MIN-JOO,YOO Dong-su,CHOI Soo-jung. Владелец: . Дата публикации: 2017-02-02.

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Номер патента: US20160042960A1. Автор: CHOI Kang Sik,KIM Jin Ha,Lee Young Ho,CHAE Su Jin,KIM Jun Kwan. Владелец: . Дата публикации: 2016-02-11.

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Номер патента: US20170053873A1. Автор: Zhu Huilong. Владелец: . Дата публикации: 2017-02-23.

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Номер патента: US20180102293A1. Автор: Gi-gwan PARK,Yongkuk Jeong. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-04-12.

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Номер патента: JP2010141047A. Автор: Yoji Shimizu,洋治清水. Владелец: Renesas Technology Corp. Дата публикации: 2010-06-24.

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Номер патента: JP2950009B2. Автор: 正一佐々木. Владелец: Nippon Electric Co Ltd. Дата публикации: 1999-09-20.

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Номер патента: JP2630294B2. Автор: 秀範江川. Владелец: Nippon Electric Co Ltd. Дата публикации: 1997-07-16.

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Номер патента: JP3339881B2. Автор: 寛治大塚,雅雄水上,博赤崎,宏舘. Владелец: Hitachi ULSI Systems Co Ltd. Дата публикации: 2002-10-28.

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Номер патента: CN1638104A. Автор: 金久保优. Владелец: Northeast Sanyo Semi-Conductive Co Ltd. Дата публикации: 2005-07-13.

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Номер патента: JP2655504B2. Автор: 知光佐竹. Владелец: Nippon Electric Co Ltd. Дата публикации: 1997-09-24.

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Номер патента: FR2513810A1. Автор: Isao Shimizu. Владелец: HITACHI LTD. Дата публикации: 1983-04-01.

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Номер патента: US10276675B2. Автор: Sun-jung Lee,Jung-Hun Choi,Da-Il Eom,Sung-Uk Jang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-04-30.

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Номер патента: HK69187A. Автор: Shizuo Kondo,Setsuo Ogura,Makoto Furihata. Владелец: HITACHI LTD. Дата публикации: 1987-10-02.

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Номер патента: US10879239B2. Автор: Heon-Jong Shin,Hwi-Chan JUN,In-chan HWANG,Jae-Ran JANG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-12-29.

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Номер патента: US6780717B2. Автор: Hideki Yasuoka,Susumu Ishida,Masami Kouketsu,Kazunari Saitou. Владелец: Hitachi Device Engineering Co Ltd. Дата публикации: 2004-08-24.

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Номер патента: CN102569228A. Автор: 黄财煜. Владелец: Nanya Technology Corp. Дата публикации: 2012-07-11.

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Номер патента: US20040227254A1. Автор: Toshio Miyamoto,Asao Nishimura,Ichiro Anjo,Yoshihide Yamaguchi. Владелец: Yoshihide Yamaguchi. Дата публикации: 2004-11-18.

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Номер патента: US20060138617A1. Автор: Hiromichi Suzuki,Yoshinori Miyaki,Tsuyoshi Kaneda. Владелец: Renesas Technology Corp. Дата публикации: 2006-06-29.

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Номер патента: KR101486201B1. Автор: 김주형,임재성. Владелец: 하나 마이크론(주). Дата публикации: 2015-01-26.

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Номер патента: US6803644B2. Автор: Yoshiaki Kamigaki,Hideki Yasuoka,Shinichi Minami,Fukuo Owada. Владелец: Renesas Technology Corp. Дата публикации: 2004-10-12.

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Номер патента: US20050264965A1. Автор: Minoru Okamoto. Владелец: Matsushita Electric Industrial Co Ltd. Дата публикации: 2005-12-01.

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Номер патента: US20050070099A1. Автор: Takafumi Tokunaga,Makoto Yoshida,Fumio Ootsuka. Владелец: Fumio Ootsuka. Дата публикации: 2005-03-31.

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Номер патента: US6835650B1. Автор: Mark McQueen. Владелец: Micron Technology Inc. Дата публикации: 2004-12-28.

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Номер патента: TW202115914A. Автор: 黃升柱. Владелец: 南韓商三星電子股份有限公司. Дата публикации: 2021-04-16.

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Номер патента: US6661062B2. Автор: Yusuke Nonaka,Toshiro Takahashi,Yasunobu Yanagisawa,Kazuhisa Suzuki. Владелец: HITACHI LTD. Дата публикации: 2003-12-09.

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Номер патента: US5602048A. Автор: Satoshi Meguro,Hitoshi Kume,Kazuhiro Komori,Toshiaki Nishimoto,Hideaki Yamamoto. Владелец: HITACHI LTD. Дата публикации: 1997-02-11.

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Номер патента: KR101300820B1. Автор: 이동석,정승필,조홍. Владелец: 삼성전자주식회사. Дата публикации: 2013-08-26.

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Номер патента: KR100617941B1. Автор: 백승덕. Владелец: 삼성전자주식회사. Дата публикации: 2006-08-30.

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Номер патента: TW202207292A. Автор: 沙哈吉Ｂ摩爾,張世杰. Владелец: 台灣積體電路製造股份有限公司. Дата публикации: 2022-02-16.

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Номер патента: SG40887G. Автор: . Владелец: HITACHI LTD. Дата публикации: 1987-07-17.

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Номер патента: EP0534632A2. Автор: Shigeki 1-2-8-303 Kizu-Cho Sawada. Владелец: Matsushita Electronics Corp. Дата публикации: 1993-03-31.

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Номер патента: JP2684979B2. Автор: 靖木下. Владелец: NEC Corp. Дата публикации: 1997-12-03.

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Номер патента: KR20090032709A. Автор: 김용환,이맹열,강미현. Владелец: 삼성전자주식회사. Дата публикации: 2009-04-01.

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Номер патента: KR102426666B1. Автор: 정재엽,윤종밀,윤종식,이화성,김현조,정희돈,유제민,차규만. Владелец: 삼성전자주식회사. Дата публикации: 2022-07-28.

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Номер патента: US7071510B2. Автор: Kong-Soo Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2006-07-04.

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Номер патента: US11557677B2. Автор: Hyun-chul Lee,Yun-Seung Kang,Sang-Gyo Chung,Ji-seung LEE,Soung-hee LEE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-01-17.

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Номер патента: KR102493464B1. Автор: 박수정,문광진,임동찬,최주일,아츠시 후지사키,서주빈. Владелец: 삼성전자 주식회사. Дата публикации: 2023-01-30.

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Номер патента: JP3179595B2. Автор: 光雄宇佐美,敬二郎上原. Владелец: HITACHI LTD. Дата публикации: 2001-06-25.

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Номер патента: US9466611B2. Автор: Yosuke Komori,Yasuyoshi Hyodo. Владелец: Toshiba Corp. Дата публикации: 2016-10-11.

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Номер патента: CN109216346B. Автор: 朴哲弘,崔晸赫,李海王,河玹知. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-01-03.

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Номер патента: US20220238689A1. Автор: Changseop YOON,Jong Shik Yoon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-07-28.

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Номер патента: US7232957B2. Автор: Nobuhisa Takakusaki,Masahiko Mizutani,Mitsuru Noguchi. Владелец: Sanyo Electric Co Ltd. Дата публикации: 2007-06-19.

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Номер патента: EP2028684A2. Автор: Hiromichi Suzuki,Yoshinori Miyaki,Tsuyoshi Kaneda. Владелец: HITACHI LTD. Дата публикации: 2009-02-25.

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Номер патента: TW201810659A. Автор: 鄭鏞國,朴起寬. Владелец: 三星電子股份有限公司. Дата публикации: 2018-03-16.

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Номер патента: JP3369751B2. Автор: 貴久雄磯山. Владелец: Sanyo Electric Co Ltd. Дата публикации: 2003-01-20.

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Номер патента: JP2924867B2. Автор: 好文森山. Владелец: Nippon Electric Co Ltd. Дата публикации: 1999-07-26.

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Номер патента: US20020028561A1. Автор: Osamu Kitamura,Tadayoshi Takada,Shigeaki Okawa,Hirotsugu Hata,Chikao Fujinuma. Владелец: Individual. Дата публикации: 2002-03-07.

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Номер патента: US20030132465A1. Автор: Shinichiro Mitani,Tomohiro Saito,Katsuhiko Ichinose,Youhei Yanagida. Владелец: HITACHI LTD. Дата публикации: 2003-07-17.

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Номер патента: EP1187193A3. Автор: Osamu Kitamura,Tadayoshi Takada,Shigeaki Okawa,Hirotsugu Hata,Chikao Fujinuma. Владелец: Sanyo Electric Co Ltd. Дата публикации: 2005-01-05.

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Номер патента: TW520566B. Автор: Fumitoshi Ito. Владелец: HITACHI LTD. Дата публикации: 2003-02-11.

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Номер патента: TW200401603A. Автор: Masahiko Oshimura,Kouichirou Sagawa. Владелец: Ajinomoto Kk. Дата публикации: 2004-01-16.

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Номер патента: FR2798513A1. Автор: Philippe Patrice,Olivier Brunet,Bernard Calvas,Didier Elbaz. Владелец: Gemplus SA. Дата публикации: 2001-03-16.

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Номер патента: US20070052491A1. Автор: Xing Lan,Mark Kintis,Flavia Fong. Владелец: Northrop Grumman Corp. Дата публикации: 2007-03-08.

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Номер патента: US4095330A. Автор: Chung K. Kim. Владелец: Raytheon Co. Дата публикации: 1978-06-20.

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Номер патента: US6888225B2. Автор: Luca Zanotti,Giorgio De Santi. Владелец: STMICROELECTRONICS SRL. Дата публикации: 2005-05-03.

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Номер патента: US20130187266A1. Автор: Hsien-Wei Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2013-07-25.

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Номер патента: US20160049489A1. Автор: Wei Andy,Bouche Guillaume,WAN Jing,Koh Shao Ming. Владелец: . Дата публикации: 2016-02-18.

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Номер патента: US20140152383A1. Автор: Nikonov Dmitri E.,Sankman Robert L.,PAN Jin,KIM Raseong. Владелец: . Дата публикации: 2014-06-05.

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Номер патента: US20200312809A1. Автор: Chung-Chang Lin,Ching-Kuang Wang. Владелец: Realtek Semiconductor Corp. Дата публикации: 2020-10-01.

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Номер патента: KR100630706B1. Автор: 전광열. Владелец: 삼성전자주식회사. Дата публикации: 2006-10-02.

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Номер патента: KR100331841B1. Автор: 차기본,서희중. Владелец: 박종섭. Дата публикации: 2002-05-09.

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Номер патента: TWI459514B. Автор: John Robert MCMILLAN,Xiao Yun CHEN,Tung Lok Li. Владелец: QPL Ltd. Дата публикации: 2014-11-01.

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Номер патента: KR102445598B1. Автор: 천-요우 슈,칭-솅 추. Владелец: 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드. Дата публикации: 2022-09-20.

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Номер патента: KR0145650B1. Автор: 다까유끼 모모세. Владелец: 닛뽕덴끼 가부시끼가이샤. Дата публикации: 1998-11-02.

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Номер патента: CA1026469A. Автор: Ingrid E. Magdo,Steven Magdo. Владелец: International Business Machines Corp. Дата публикации: 1978-02-14.

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Номер патента: JP4977388B2. Автор: チャオヤン. Владелец: Memsic Inc. Дата публикации: 2012-07-18.

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Номер патента: FR2667197B1. Автор: Rosette Azoulay,Louis Dugrand. Владелец: Louis Dugrand. Дата публикации: 1993-12-24.

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Номер патента: CA3197197A1. Автор: Fei Xue,Dan Zhang,Xiaoyu Liu,Hao SONG,Yong Qin,Huan He. Владелец: Sichuan University. Дата публикации: 2022-06-23.

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Номер патента: US20030027441A1. Автор: Vijay Patel,Hsin-Hong Huang. Владелец: Visteon Global Technologies Inc. Дата публикации: 2003-02-06.

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Номер патента: US20040090828A1. Автор: Junichi Okamura. Владелец: THine Electronics Inc. Дата публикации: 2004-05-13.

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Номер патента: MY7800400A. Автор: . Владелец: Suwa Seikosha KK. Дата публикации: 1978-12-31.

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Номер патента: KR101388350B1. Автор: 김종훈,최진철. Владелец: 엘지디스플레이 주식회사. Дата публикации: 2014-04-22.

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Номер патента: KR100517734B1. Автор: 김경면. Владелец: 삼성전자주식회사. Дата публикации: 2005-09-29.

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Номер патента: US7843699B2. Автор: Tetsurou Ishii. Владелец: Denso Corp. Дата публикации: 2010-11-30.

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Номер патента: DE3061712D1. Автор: Rolf Dr Geiger,Volker Dr Teetz,Wolfgang Dr Konig,Georg Dr Jager. Владелец: Hoechst AG. Дата публикации: 1983-03-03.

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Номер патента: JPS59161127A. Автор: Akira Mizuno,Hiroshi Hososaka,明水野,細坂　啓. Владелец: HITACHI LTD. Дата публикации: 1984-09-11.

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Номер патента: TW200717694A. Автор: Michael Graf,Volker Dudek,Franz Dietz,Stefan Schwantes,Gayle W Miller Jr. Владелец: Atmel Corp. Дата публикации: 2007-05-01.

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Номер патента: US20020060334A1. Автор: Kenichi Kuroda,Shoji Shukuri. Владелец: Individual. Дата публикации: 2002-05-23.

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Номер патента: TW200744203A. Автор: Yong-kyu Lee,Jeong-Uk Han,Hyun-Khe Yoo,Hee-Seog Jeon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2007-12-01.

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Номер патента: US12050402B2. Автор: Takayuki Fujiwara,Masaki Ohashi,Kenichi Oikawa,Tomohiro Kobayashi,Teppei Adachi. Владелец: Shin Etsu Chemical Co Ltd. Дата публикации: 2024-07-30.

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Номер патента: PT73849A. Автор: . Владелец: Int Standard Electric Corp. Дата публикации: 1981-11-01.

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Номер патента: US20070161269A1. Автор: Mitsuru Nakagawa,Keiichi Sugimoto. Владелец: Denso Corp. Дата публикации: 2007-07-12.

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Номер патента: KR100203540B1. Автор: 유스케 와다,다카히로 모리,야스시 아라이,겐지 사사오카,히로시 오다이라,후미토시 이케가야,에이지 이마무라,사다오 고와타리. Владелец: 니시무로 타이죠. Дата публикации: 1999-06-15.

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Номер патента: FR2536872A1. Автор: Catherine Gueugnon,Pierre Bernstein. Владелец: Bull SA. Дата публикации: 1984-06-01.

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Номер патента: US20060010088A1. Автор: Pieter Vorenkamp,Neil Kim. Владелец: Broadcom Corp. Дата публикации: 2006-01-12.

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Номер патента: US20050065761A1. Автор: Yu-Yu Sung,Cheng-Hsing Chien. Владелец: Topro Tech Inc. Дата публикации: 2005-03-24.

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Номер патента: WO2002004968A3. Автор: Rafiqul Hussain,Phuc Dinh Do,Benjamin G Tubera. Владелец: Advanced Micro Devices Inc. Дата публикации: 2003-11-06.

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Номер патента: US20220180505A1. Автор: SCHOLL Jonathan,Darby Nicholas,Baur Joshua. Владелец: . Дата публикации: 2022-06-09.

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Номер патента: KR100629581B1. Автор: 권오경,최상무. Владелец: 삼성에스디아이 주식회사. Дата публикации: 2006-09-27.

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Номер патента: KR100595101B1. Автор: 권오경,최상무. Владелец: 삼성에스디아이 주식회사. Дата публикации: 2006-07-03.

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Номер патента: JPS59175749A. Автор: 大場　収,サミユエル・チ−. Владелец: Fujitsu Ltd. Дата публикации: 1984-10-04.

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Номер патента: US11531489B2. Автор: Jinwoo Kim,Wonhee CHO,Jaeyong Jeong,Myunghyun JO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-12-20.

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Номер патента: JP2003262664A. Автор: Norifumi Kobayashi,憲史小林. Владелец: Toshiba Corp. Дата публикации: 2003-09-19.

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Номер патента: CN100593770C. Автор: 清崎健一. Владелец: Sanyo Electric Co Ltd. Дата публикации: 2010-03-10.

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Номер патента: US20130300726A1. Автор: Son Yeong Joon,Kim Myung Yu. Владелец: SILICON WORKS CO., LTD.. Дата публикации: 2013-11-14.

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Номер патента: TW201235996A. Автор: Young-Min Choi,Jae-Youl Lee,Dong-Hoon Baek,Han-Su Pae. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2012-09-01.

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Номер патента: KR101472682B1. Автор: 이헌,최원식,변경재. Владелец: 고려대학교 산학협력단. Дата публикации: 2014-12-15.

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Номер патента: US8756537B2. Автор: Alan R. Loudermilk,J. Lynn Saunders. Владелец: Microconnect Corp. Дата публикации: 2014-06-17.

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Номер патента: US20170003345A1. Автор: Haller Wilhelm,Kaltenbach Markus,KRAUCH Ulrich,Zoellin Christian,Maeding Nicolas. Владелец: . Дата публикации: 2017-01-05.

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Номер патента: US20160063948A1. Автор: HAN Ho-Seok. Владелец: . Дата публикации: 2016-03-03.

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Номер патента: US20150077387A1. Автор: HAN Man Hyeop. Владелец: LG DISPLAY CO., LTD.. Дата публикации: 2015-03-19.

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Номер патента: US20170076694A1. Автор: Shin Byung-Hyuk,LIM Myeong-Bin. Владелец: . Дата публикации: 2017-03-16.

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Номер патента: US20150160293A1. Автор: Haller Wilhelm,Kaltenbach Markus,KRAUCH Ulrich,Zoellin Christian,Maeding Nicolas. Владелец: . Дата публикации: 2015-06-11.

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Номер патента: US20180231607A1. Автор: Haller Wilhelm,Kaltenbach Markus,KRAUCH Ulrich,Zoellin Christian,Maeding Nicolas. Владелец: . Дата публикации: 2018-08-16.

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Номер патента: US20180252772A1. Автор: Shia David,Detofsky Abram M.,Tadayon Pooya,PAN Jin,Peterson John M.,Fledell Evan M.,Kitendaugh Dinia P.,Abdulai Mustapha A.. Владелец: Intel Corporation. Дата публикации: 2018-09-06.

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Номер патента: US20140354311A1. Автор: BYEON Sang-Jin. Владелец: SK HYNIX INC.. Дата публикации: 2014-12-04.

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Номер патента: US20200284624A1. Автор: van Dommelen Ignatius Josephus. Владелец: Sencio B.V.. Дата публикации: 2020-09-10.

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Номер патента: US20170329889A1. Автор: KIM Sunghoon,LEE MOO-KYUNG,SON JAEICK. Владелец: . Дата публикации: 2017-11-16.

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Номер патента: KR100728553B1. Автор: 강상희. Владелец: 주식회사 하이닉스반도체. Дата публикации: 2007-06-15.

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Номер патента: KR102135635B1. Автор: 김창균,정태영,송홍성. Владелец: 엘지디스플레이 주식회사. Дата публикации: 2020-07-20.

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Номер патента: KR102396462B1. Автор: 김범식,유상호. Владелец: 엘지디스플레이 주식회사. Дата публикации: 2022-05-11.

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Номер патента: US20230010159A1. Автор: PARK Jin Hyeong,HAN In Hak. Владелец: . Дата публикации: 2023-01-12.

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Номер патента: FR2939964B1. Автор: Florent Miller,Cecile Weulersse,Thierry Carriere,Patrick Heins,Antonin Bourgerol,Samuel Hazo. Владелец: EUROPEAN AERONAUTIC DEFENCE AND SPACE COMPANY EADS FRANCE. Дата публикации: 2010-12-10.

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Номер патента: FR2939964A1. Автор: Florent Miller,Cecile Weulersse,Thierry Carriere,Patrick Heins,Antonin Bourgerol,Samuel Hazo. Владелец: AIRBUS GROUP SAS. Дата публикации: 2010-06-18.

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Номер патента: KR100274099B1. Автор: 지. 웨이스 도날드,엠. 돕스 로라,에스. 토마스 제임스,에이. 라시노 그레고리. Владелец: 비센트 비.인그라시아. Дата публикации: 2001-01-15.

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Номер патента: KR20210105125A. Автор: 안용성. Владелец: 주식회사 실리콘웍스. Дата публикации: 2021-08-26.

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Номер патента: FR2724483A1. Автор: Jean Devin. Владелец: SGS Thomson Microelectronics SA. Дата публикации: 1996-03-15.

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Номер патента: US6438013B2. Автор: Yoshiharu Kato,Nobuyoshi Wakasugi. Владелец: Fujitsu Ltd. Дата публикации: 2002-08-20.

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Номер патента: US10380942B2. Автор: Changho AN,Byungil Kim. Владелец: LG Display Co Ltd. Дата публикации: 2019-08-13.

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Номер патента: US3056032A. Автор: Maxwell R Cannon. Владелец: International Business Machines Corp. Дата публикации: 1962-09-25.

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Номер патента: US20060010409A1. Автор: Kyoji Yamashita,Yasuhiro Tamaki. Владелец: Matsushita Electric Industrial Co Ltd. Дата публикации: 2006-01-12.

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Номер патента: KR20190124578A. Автор: 이기원,정승주,임혁상. Владелец: 에스케이하이닉스 주식회사. Дата публикации: 2019-11-05.

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Номер патента: KR100666638B1. Автор: 이재성,윤수연. Владелец: 삼성에스디아이 주식회사. Дата публикации: 2007-01-10.

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Номер патента: KR102031074B1. Автор: 변상진. Владелец: 에스케이하이닉스 주식회사. Дата публикации: 2019-10-15.

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Номер патента: FR2859016A1. Автор: Michael Lindner,Bernd Schmidtke. Владелец: ROBERT BOSCH GMBH. Дата публикации: 2005-02-25.

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Номер патента: JP2910723B2. Автор: 宗司 ▲高▼橋. Владелец: Nippon Electric Co Ltd. Дата публикации: 1999-06-23.

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Номер патента: KR100600711B1. Автор: 조희진,차승진,김의혁. Владелец: 엘지전자 주식회사. Дата публикации: 2006-07-14.

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Номер патента: FR2832527A1. Автор: Laurent Boulogne,Laurent Gautret. Владелец: Astrium SAS. Дата публикации: 2003-05-23.

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Номер патента: JPH10168672A. Автор: Reifelt Ferdinand,レイフェルトフェルディナンド,Schriffter Stefan,シュリフテルステファン. Владелец: Truetzschler GmbH and Co KG. Дата публикации: 1998-06-23.

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Номер патента: US20050229276A1. Автор: Junzo Fujigaki. Владелец: TOKYO UNIVERSITY OF AGRICULTURE. Дата публикации: 2005-10-13.

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Номер патента: US1959078A. Автор: Virgil C Eddleman. Владелец: JOSEPH QUINTON SPRADLIN. Дата публикации: 1934-05-15.

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Номер патента: US20070218186A1. Автор: CHANG Lee,Heon Jung,Jong Kim. Владелец: CJ Corp. Дата публикации: 2007-09-20.

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Номер патента: US6821394B2. Автор: Yi Shi. Владелец: Individual. Дата публикации: 2004-11-23.

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Номер патента: KR20070010694A. Автор: 정민선,한상묵. Владелец: 정민선. Дата публикации: 2007-01-24.

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Номер патента: AR003283A1. Автор: . Владелец: Procter & Gamble. Дата публикации: 1998-07-08.

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Номер патента: FR2773777B1. Автор: Raphael Velasco,Jean Marc Blanchard,Alain Tancogne,Jean Paul Sauvee. Владелец: SOC D EXPL DES ETS MAUBRAC. Дата публикации: 2000-04-07.

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Номер патента: FR2773778B1. Автор: Raphael Velasco,Jean Marc Blanchard,Alain Tancogne,Jean Paul Sauvee. Владелец: SOC D EXPL DES ETS MAUBRAC. Дата публикации: 2000-08-11.

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Номер патента: KR100501666B1. Автор: 전한병. Владелец: 전한병. Дата публикации: 2005-07-18.

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Номер патента: KR100971874B1. Автор: 김영경. Владелец: 주식회사 동원에프앤비. Дата публикации: 2010-07-22.

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Номер патента: US6326086B1. Автор: Fujio Mori,Tsuneyuki Yamanaka,Takuji Shibata. Владелец: Nissha Printing Co Ltd. Дата публикации: 2001-12-04.

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Номер патента: CN104389547A. Автор: 张帅,黎伟,李航,张铁山,雷鸿翔,章东,谭啸,司虚,余长柏,李登伟,李乃禾,汪兴明,涂庆,金凡尧,姚若麟,谯慧琼,伍建川. Владелец: SOUTHWEST PETROLEUM UNIVERSITY. Дата публикации: 2015-03-04.

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Номер патента: KR101868294B1. Автор: 황형철. Владелец: 황형철. Дата публикации: 2018-06-15.

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Номер патента: FR2642693B1. Автор: Francis Girard,Christian Jean Andre Marceau,Jean-Pierre Gaston Pouget. Владелец: Hispano Suiza Sa. Дата публикации: 1991-04-19.

Production process of cork discs and machine for the production of cork discs according to the same process

Номер патента: EP1772240A1. Автор: David Navarro Salomo. Владелец: David Navarro Salomo. Дата публикации: 2007-04-11.

Process of making refractory monolithic lining of steel foundry ladle and apparatus for making the same

Номер патента: CZ228696A3. Автор: Roland Kessler,Heinz Werner Dipl Ing Stripp,Horst Tiemann. Владелец: Dolomitwerke GmbH. Дата публикации: 1997-03-12.

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Номер патента: KR102029922B1. Автор: 이재훈,류훈,노재국. Владелец: 주식회사 삼양사. Дата публикации: 2019-11-08.

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Номер патента: KR100954386B1. Автор: 장문식,우문제,부성준. Владелец: 광동제약 주식회사. Дата публикации: 2010-04-26.

Process of continuously producing staple fibers, particularly from mineral wool and apparatus for making the same

Номер патента: CZ372392A3. Автор: Joachim Mellem,Hirschmann Dr Klemens. Владелец: Gruenzweig & Hartmann. Дата публикации: 1993-07-14.

Process of continuously producing staple fibers, particularly from mineral wool and apparatus for making the same

Номер патента: CZ282493B6. Автор: Joachim Mellem,Klemens Dr. Hirschmann. Владелец: Grunzweig + Hartmann Ag. Дата публикации: 1997-07-16.

Mobile installation for processing of high-toxic biochemical refuse using self-controlling plasma, and method for performing the same

Номер патента: RU2318568C2. Автор: Роджер РЕМИ. Владелец: Аэроспейс Консалтинг Корпорейшн Спейн, С.Л.. Дата публикации: 2008-03-10.

Process of impregnating or saturating strawboard paper and the like containers and subsequently draining the same

Номер патента: GB139533A. Автор: . Владелец: Individual. Дата публикации: 1920-03-02.

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Номер патента: CZ194491A3. Автор: Robert Moser,Urs Dr Meyer,Giancarlo Dr Mondini. Владелец: Rieter Ag Maschf. Дата публикации: 1993-10-13.

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Номер патента: RU2592547C1. Автор: Александр Андреевич Иванов,Александр Сергеевич Зубков. Владелец: Общество с ограниченной ответственностью "ЭЛЕКТРОМАШ". Дата публикации: 2016-07-27.

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Номер патента: RU2117152C1. Автор: В.З. Пойлов,О.В. Погудин,О.К. Косвинцев. Владелец: Шишова Светлана Владимировна. Дата публикации: 1998-08-10.

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Номер патента: RU2034364C1. Автор: В.А. Хрусталев,А.И. Мочалов,Д.Г. Громов,В.П. Пугачевич,А.А. Азаров. Владелец: Московский институт электронной техники. Дата публикации: 1995-04-30.

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Номер патента: JP3797474B2. Автор: 憲二大空,政司米丸. Владелец: Sharp Corp. Дата публикации: 2006-07-19.

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Номер патента: US20120248630A1. Автор: . Владелец: RENESAS ELECTRONICS CORPORATION. Дата публикации: 2012-10-04.

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Номер патента: TWI227324B. Автор: Yi-Ching Tsai. Владелец: TASK TECHNOLOGY Inc. Дата публикации: 2005-02-01.

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Номер патента: CZ278526B6. Автор: Miroslav Regent. Владелец: Pal Magneton Sp. Дата публикации: 1994-02-16.

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Номер патента: CZ79292A3. Автор: Miroslav Regent. Владелец: Pal Magneton Sp. Дата публикации: 1993-10-13.

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Номер патента: US20120032269A1. Автор: Chang Dong-ryul,Lee Tae-Jung,Kim Sung-hoan,Lee Soo-cheol. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2012-02-09.

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Номер патента: US20120039564A1. Автор: . Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2012-02-16.

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Номер патента: US20120126394A1. Автор: Huang Tsai Yu. Владелец: NANYA TECHNOLOGY CORPORATION. Дата публикации: 2012-05-24.

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Номер патента: US20120126412A1. Автор: . Владелец: NANYA TECHNOLOGY CORP.. Дата публикации: 2012-05-24.

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Номер патента: US20120161247A1. Автор: KIM Sung-Min,Yun Eun-Jung,Lee Sung-yung,Kim Min-sang. Владелец: . Дата публикации: 2012-06-28.

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Номер патента: US20120168935A1. Автор: Huang Tsai Yu. Владелец: NANYA TECHNOLOGY CORP.. Дата публикации: 2012-07-05.

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Номер патента: US20120192413A1. Автор: Ma Qing,Tran Quan A.,Sankman Robert L.,Swan Johanna M.,Rao Valluri R.. Владелец: . Дата публикации: 2012-08-02.

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Номер патента: US20120193809A1. Автор: . Владелец: NANYA TECHNOLOGY CORP.. Дата публикации: 2012-08-02.

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Номер патента: US20120267753A1. Автор: . Владелец: Taiwan Semiconductor Manufacturing Company, Ltd.. Дата публикации: 2012-10-25.

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Номер патента: JP3085472B2. Автор: 和佳志波. Владелец: HITACHI LTD. Дата публикации: 2000-09-11.

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Номер патента: JP3142301B2. Автор: 裕一金子,康司松見. Владелец: Oki Electric Industry Co Ltd. Дата публикации: 2001-03-07.

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Номер патента: JP2880885B2. Автор: 義裕北村. Владелец: Nippon Electric Co Ltd. Дата публикации: 1999-04-12.

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Номер патента: JP3189722B2. Автор: 靖木下. Владелец: NEC Corp. Дата публикации: 2001-07-16.

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Номер патента: JP3426872B2. Автор: 強高橋,益良男吉井. Владелец: Sanyo Electric Co Ltd. Дата публикации: 2003-07-14.

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Номер патента: JP2985183B2. Автор: 義明山田. Владелец: Nippon Electric Co Ltd. Дата публикации: 1999-11-29.

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Номер патента: JP2746234B2. Автор: 康治岡田. Владелец: Nippon Electric Co Ltd. Дата публикации: 1998-05-06.

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Номер патента: JP3120462B2. Автор: 直人松尾,義朗中田,俊樹薮,昌三岡田,晋松本. Владелец: Panasonic Corp. Дата публикации: 2000-12-25.

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Номер патента: US20120201738A1. Автор: . Владелец: N-BARO TECH CO., LTD. Дата публикации: 2012-08-09.

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Номер патента: US20120020027A1. Автор: Dungan Thomas,"ONeill Peter Mark". Владелец: Avago Technologies Enterprise IP (Singapore) Pte. Ltd.. Дата публикации: 2012-01-26.

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Номер патента: US20120217586A1. Автор: CHERN Chan-Hong,HSUEH Fu-Lung. Владелец: Taiwan Semiconductor Manufacturing Company, Ltd.. Дата публикации: 2012-08-30.

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Номер патента: US20120273782A1. Автор: . Владелец: Taiwan Semiconductor Manufacturing Company, Ltd.. Дата публикации: 2012-11-01.

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Номер патента: US20120319765A1. Автор: . Владелец: . Дата публикации: 2012-12-20.

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Номер патента: US20130194019A1. Автор: LEE HOI JIN,Jung Gun Ok. Владелец: . Дата публикации: 2013-08-01.

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Номер патента: JPH1056376A. Автор: Toshio Tanaka,Masao Yokoyama,正穂横山,寿夫田中. Владелец: Denso Ten Ltd. Дата публикации: 1998-02-24.

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