Method of fabricating semiconductor device.

Method of fabricating semiconductor device

Номер патента: US09524870B2
Опубликовано: 20-12-2016
Автор(ы): Chun-Soo KANG, You-Song Kim
Принадлежит: SK hynix Inc
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Рисунок 1. Взаимосвязь патентов (ближайшие 20).

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Method of forming metal silicide layer, semiconductor device and method of fabricating same

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Method of fabricating a compositional semiconductor device

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Methods of fabricating capacitor and semiconductor device including the capacitor

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Methods of fabricating capacitor and semiconductor device including the capacitor

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Method of forming contacts for a semiconductor device

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Method of forming oxide film including two non-oxygen elements, method of manufacturing semiconductor device, method of forming dielectric film, and semiconductor device

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Method of forming oxide film including two non-oxygen elements, method of manufacturing semiconductor device, method of forming dielectric film, and semiconductor device

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Method of forming thin film of semiconductor device

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Method of bevel trimming three dimensional semiconductor device

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Semiconducting graphene structures, methods of forming such structures and semiconductor devices including such structures

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Crystalline inzno oxide semiconductor, method of forming the same, and semiconductor device including the crystalline inzno oxide semiconductor

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Method of fabricating capacitor for semiconductor device

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Method of fabricating pattern in semiconductor device using spacer

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Methods of forming products with FinFET semiconductor devices without removing fins in certain areas of the product

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Methods of forming fins for finFET semiconductor devices and the selective removal of such fins

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Method of forming fine pitch hardmask patterns and method of forming fine patterns of semiconductor device using the same

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Methods of forming products with finfet semiconductor devices without removing fins in certain areas of the product

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METHOD OF PATTERNING FEATURES OF A SEMICONDUCTOR DEVICE

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Method for fabricating semiconductor device

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반도체장치의 캐패시터의 제조방법(Method of fabricating capacitor of semiconductor device)

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Active structures of a semiconductor device and methods of manufacturing the same

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Method for fabricating semiconductor device

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Semiconductor device having capped air caps between buried bit lines and buried gate

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Method of fabricating three-dimensional semiconductor device and three-dimensional semiconductor device fabricated using the same

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Method of Fabricating a Power Semiconductor Device

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Method of fabricating a power semiconductor device

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Pattern structures in semiconductor devices and methods of forming pattern structures in semiconductor devices

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Pattern structures in semiconductor devices and methods of forming pattern structures in semiconductor devices

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Methods of fabricating three-dimensional semiconductor devices

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Method of forming fine pattern of semiconductor device

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Method of manufacturing a silicon carbide semiconductor device

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Method of Forming a Super Junction Semiconductor Device Having Stripe-Shaped Regions of the Opposite Conductivity Types

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Method of manufacturing a reverse blocking semiconductor device

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Method of forming a super junction semiconductor device having stripe-shaped regions of the opposite conductivity types

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Method of manufacturing a silicon carbide semiconductor device

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Method of manufacturing semiconductor wafer and semiconductor device

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Method of forming gate line of semiconductor device

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A method of manufacturing a vertical oriented semiconductor device as well as a corresponding vertical oriented semiconductor device obtained by such a method

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A method of manufacturing a vertical oriented semiconductor device as well as a corresponding vertical oriented semiconductor device obtained by such a method

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Method of forming conductive layer of semiconductor device

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Reverse Blocking Semiconductor Device, Semiconductor Device with Local Emitter Efficiency Modification and Method of Manufacturing a Reverse Blocking Semiconductor Device

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Methods of forming ohmic contacts on semiconductor devices with trench/mesa structures

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Semiconductor devices including polar insulation layer capped by non-polar insulation layer

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Method for manufacturing silicon carbide semiconductor device and silicon carbide semiconductor device

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Semiconductor devices and methods of manufacturing the same

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Method of manufacturing silicon carbide semiconductor device by using protective films to activate dopants in the silicon carbide semiconductor device

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Manufacturing method of vertical GaN-based semiconductor device and vertical GaN-based semiconductor device

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GaN Single-Crystal Mass and Method of Its Manufacture, and Semiconductor Device and Method of Its Manufacture

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Semiconductor device and method of manufacturing the same

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Detection of seed layers on a semiconductor device

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Method of manufacturing silicon carbide seminconductor device

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Method of manufacturing silicon carbide semiconductor device

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Method of forming sacrificial self-aligned features for assisting die-to-die and die-to-wafer direct bonding

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Method of manufacturing silicon carbide semiconductor device

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MIS semiconductor device and method of fabricating the same

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Mis semiconductor device and method of fabricating the same

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Method of manufacturing thin film semiconductor device

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Method of growing a semiconductor layer and a fabrication method of a semiconductor device using such a semiconductor layer

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Semiconductor device and formation thereof

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Methods of testing cell arrays and semiconductor devices executing the same

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Method of correcting design layout of semiconductor device, computing device performing the same, and method of fabricating semiconductor device using the same

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Method of fabricating integrated semiconductor device and structure thereof

Номер патента: US9302904B2. Автор: Shuo-Lun Tu,Ming-Tung Lee,Hsueh-I Huang. Владелец: Macronix International Co Ltd. Дата публикации: 2016-04-05.

Method of fabricating integrated semiconductor device and structure thereof

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Method of cleaning, support, and cleaning apparatus

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Template and method of manufacturing the same, and semiconductor device manufacturing method using the template

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Method of manufacturing insulating layer and semiconductor device including insulating layer, and semiconductor device formed thereby

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Method of refining chemical for manufacturing semiconductor devices and apparatus for its reuse

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Method of generating layout of semiconductor device

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Semiconductor device related to performance of a program operation and method of operating the semiconductor device

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Semiconductor device and method of operating the same

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Method of cleaning, support, and cleaning apparatus

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Method of cleaning, support, and cleaning apparatus

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Semiconductor memory device, flag generating circuit, and method of outputting data in a semiconductor device

Номер патента: US20180268880A1. Автор: Yoo Jong Lee. Владелец: SK hynix Inc. Дата публикации: 2018-09-20.

Semiconductor memory device, flag generating circuit, and method of outputting data in a semiconductor device

Номер патента: US10424349B2. Автор: Yoo Jong Lee. Владелец: SK hynix Inc. Дата публикации: 2019-09-24.

Communication system, semiconductor device, and data communication method

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COMPUTING DEVICE EXECUTING PROGRAM PERFORMING METHOD OF ANALYZING POWER NOISE IN SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE DESIGN METHOD, AND PROGRAM STORAGE MEDIUM STORING PROGRAM

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COMPUTING DEVICE EXECUTING PROGRAM PERFORMING METHOD OF ANALYZING POWER NOISE IN SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE DESIGN METHOD, AND PROGRAM STORAGE MEDIUM STORING PROGRAM

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Structure and method of signal enhancement for alignment patterns

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Method of OPC Model Building, Information-Processing Apparatus, and Method of Determining Process Conditions of Semiconductor Device

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Semiconductor device and method of sensing data of the semiconductor device

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Method of OPC model building, information-processing apparatus, and method of determining process conditions of semiconductor device

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Semiconductor device and method of sensing data of the semiconductor device

Номер патента: KR101652785B1. Автор: 김호정,최현식,신재광,정형수. Владелец: 삼성전자주식회사. Дата публикации: 2016-09-01.

SEMICONDUCTOR DEVICE AND METHOD OF OPERATING AND CONTROLLING A SEMICONDUCTOR DEVICE

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METHOD OF USE TIME MANAGEMENT FOR SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE INCLUDING USE TIME MANAGING CIRCUIT

Номер патента: US20160104522A1. Автор: PARK Chul-woo,SOHN Young-Soo,SON Jong-Pil. Владелец: . Дата публикации: 2016-04-14.

Semiconductor memory device, flag generating circuit, and method of outputting data in a semiconductor device

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Semiconductor device and method of operating and controlling a semiconductor device

Номер патента: US10529393B2. Автор: Tae Young Oh,Seungjun Shin. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-01-07.

METHOD OF ANALYZING LATTICE STRAIN OF SEMICONDUCTOR DEVICE

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METHOD OF DETECTING DEFECTIVE LAYER OF SEMICONDUCTOR DEVICE AND COMPUTING SYSTEM FOR PERFORMING THE SAME

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METHOD OF DETERMINING COLORABILITY OF A SEMICONDUCTOR DEVICE AND SYSTEM FOR IMPLEMENTING THE SAME

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SEMICONDUCTOR PACKAGE AND METHOD OF ESTIMATING SURFACE TEMPERATURE OF SEMICONDUCTOR DEVICE INCLUDING THE SAME

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METHOD OF DETERMINING COLORABILITY OF A SEMICONDUCTOR DEVICE AND SYSTEM FOR IMPLEMENTING THE SAME

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METHOD OF DETERMINING COLORABILITY OF A SEMICONDUCTOR DEVICE AND SYSTEM FOR IMPLEMENTING THE SAME

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Method of forming micro pattern of semiconductor device

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Method of forming fine pattern of semiconductor device

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PACKAGE FOR SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME AND SEMICONDUCTOR DEVICE

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PACKAGE FOR SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME AND SEMICONDUCTOR DEVICE

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PACKAGE FOR SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME AND SEMICONDUCTOR DEVICE

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THREE DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

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Methods of Forming Nonvolatile Memory Devices Using Nonselective and Selective Etching Techniques to Define Vertically Stacked Word Lines

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METHOD OF ARRANGING PADS IN SEMICONDUCTOR DEVICE, SEMICONDUCTOR MEMORY DEVICE USING THE METHOD, AND PROCESSING SYSTEM HAVING MOUNTED THEREIN THE SEMICONDUCTOR MEMORY DEVICE

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Method of making interconnections for semiconductor device

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PROCESS FOR FABRICATING SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING METAL OXIDE SEMICONDUCTOR DEVICE

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Method of fabricating field effect semiconductor device

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Method of fabricating resistance-reduced semiconductor device

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Method of fabricating resistance-reduced semiconductor device

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Method of and system for getting semiconductor devices of improved properties and preliminary selection of avalanche devices

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CRYSTALLINE SEMICONDUCTOR THIN FILM, METHOD OF FABRICATING THE SAME, SEMICONDUCTOR DEVICE, AND METHOD OF FABRICATING THE SAME

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Improvements in or relating to methods of and devices for manufacturing semiconductor devices

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Liquid resin composition, semiconductor chip with an adhesive layer, method of producing such materials, and semiconductor devices

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Method of manufacture of micro-alloy semiconductor devices employing a cadmium impurity metal jet-plating solution

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Jet plating method of manufacture of micro-alloy semiconductor devices and plating-solutions

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Method of manufacture of micro-alloy semiconductor devices employing a cadmium impurity metal jet-plating solution

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Jet plating method of manufacture of micro-alloy semiconductor devices

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Jet plating method of manufacture of micro-alloy semiconductor devices and plating-solutions

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Jet plating method of manufacture of micro-alloy semiconductor devices

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STACKED SEMICONDUCTOR DEVICE INCLUDING ESD PROTECTION CIRCUITS AND METHOD OF FABRICATING THE STACKED SEMICONDUCTOR DEVICE

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Method of reclaiming noble metals from semiconductor devices

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Manufacturing method of lateral diffusion metal oxide semiconductor device

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Method of making a dielectrically isolated semiconductor device

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Improvements in or relating to methods of manufacturing glass envelopes for semiconductor devices

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Methods of manufacturing sealed housings for semiconductor devices

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Methods of manufacturing sealed housings for semiconductor devices

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Method of manufacturing gate electrode in semiconductor device

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Method of manufacturing SOI substrate and semiconductor device

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METHOD OF FABRICATION OF A SEMICONDUCTOR DEVICE HAVING REDUCED PITCH

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METHOD OF FABRICATING TRANSISTOR FOR SEMICONDUCTOR DEVICE

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METHOD OF FABRICATING METAL OXIDE SEMICONDUCTOR DEVICE

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METHODS OF FABRICATING THREE-DIMENSIONAL SEMICONDUCTOR DEVICE

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Method of fabricating gate protecting semiconductor device

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TEMPERATURE SENSOR, METHOD OF MANUFACTURING THE TEMPERATURE SENSOR, SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE, AND METHOD OF CONTROLLING THE SEMICONDUCTOR DEVICE

Номер патента: US20120176835A1. Автор: TANAKA Yoshitsugu. Владелец: TOKYO ELECTRON LIMITED. Дата публикации: 2012-07-12.

METHODS OF FORMING HYDROPHOBIC SURFACES ON SEMICONDUCTOR DEVICE STRUCTURES, METHODS OF FORMING SEMICONDUCTOR DEVICE STRUCTURES, AND SEMICONDUCTOR DEVICE STRUCTURES

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ELECTRONIC DEVICE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

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SOI SUBSTRATE, METHOD OF MANUFACTURING THE SOI SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE

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METHOD OF FORMING MICROPATTERN, METHOD OF FORMING DAMASCENE METALLIZATION, AND SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MEMORY DEVICE FABRICATED USING THE SAME

Номер патента: US20130012023A1. Автор: Choi Gil-heyun,Lee Jong-Myeong,Park In-Sun,Park Ji-Soon,Hong Jong-Won,Kim Hei-seung. Владелец: . Дата публикации: 2013-01-10.

SEMICONDUCTOR DEVICE AND METHOD OF SENSING DATA OF THE SEMICONDUCTOR DEVICE

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Ion beam microfabrication method of inorganic multilayer resist and semiconductor device, quantum device, micromachine component and microstructure by this method

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Method of forming contact electrode of semiconductor device and method of forming contact electrode of phototransistor

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Low dielectric constant insulating film and method of forming the same, and semiconductor device and method of manufacturing the same

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Vertical type semiconductor device and method of manufacturing a vertical type semiconductor device

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NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE, METHOD OF WRITING THE SAME, AND SEMICONDUCTOR DEVICE

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METHOD OF DETECTING DEFECTS IN A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE USING THE SAME

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METHOD OF MANUFACTURING A PHASE CHANGE SEMICONDUCTOR DEVICE AND THE PHASE CHANGE SEMICONDUCTOR DEVICE

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CONDUCTION PATH, SEMICONDUCTOR DEVICE USING THE SAME, AND METHOD OF MANUFACTURING CONDUCTION PATH, AND SEMICONDUCTOR DEVICE

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TRANSISTOR, SEMICONDUCTOR DEVICE INCLUDING THE TRANSISTOR, AND MANUFACTURING METHOD OF THE TRANSISTOR AND THE SEMICONDUCTOR DEVICE

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Epoxy resin composition for packaging semiconductor device, method of making the same, and semiconductor device using the same

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METHODS OF TAILORING WORK FUNCTION OF SEMICONDUCTOR DEVICES WITH HIGH-K/METAL LAYER GATE STRUCTURES BY PERFORMING A FLUORINE IMPLANT PROCESS

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Method of fabricating semiconductor device

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