Cathodic sputtering of thin layers onto - eg semiconductor elements
Номер патента: DE1938131A1
Опубликовано: 28-01-1971
Автор(ы): Heinz Walter, Moll Dr Justus
Принадлежит: Leybold AG
Опубликовано: 28-01-1971
Автор(ы): Heinz Walter, Moll Dr Justus
Принадлежит: Leybold AG
Реферат: Sputtering takes place under vacuum in the presence of reactive gases supplied through the cathode surface. Spec. the device includes at least one cathode placed opposite one or more carries to be coated. The cathode surface facing the carrier consists of gas-permeable, porous material.
Method of producing piezoelectric thin films by cathodic sputtering
Номер патента: US3766041A. Автор: K Wasa,S Hayakawa. Владелец: Matsushita Electric Industrial Co Ltd. Дата публикации: 1973-10-16.