Integrated circuit device

Technical Field

The invention relates to an integrated circuit device.

Background Art

In recent years, in the non-contact manner of transmitting and receiving data integrated circuit device (also referred to as RFID (radio frequency identification) tag, ID tag, IC label, IC chip, RF (radio frequency) tag, the wireless tag, the electronic tag or wireless chip) actively progress of development. In order for the various application non-contact type and the purpose of data transmission and reception, has been the development of this kind of integrated circuit device. In this kind of integrated circuit device, the film thickness needs reduction, miniaturization and so on.

For example, by grinding or polishing of the substrate, etching the substrate using a chemical reaction such as the thickness of the substrate (for example, see Patent document 1). Moreover, in order to the integrated semiconductor component, in this way the manufacturing of the integrated circuit device provided in a multilayer structure (provided the piles in heaps folds).

[Patent document 1] Japanese Patent application pending No. 2002-87844.

Content of the invention

In the integrated circuit device, the integrated circuit device from including the integrated circuit in the accumulation of the heat generated by the rise to various problems. If integrated circuit device provided in a multilayer structure, these problems become more serious. An object of the present invention is generated from an integrated circuit to solve the problems caused by accumulation of heat.

The integrated circuit device of the invention device comprises a formed on one of the surfaces of the substrate of the integrated circuit. Another surface of the substrate (which is not formed on the surface of the integrated circuit) forms a sunken part on, the other than the one surface of the one surface of the surface area is large. In the other surface to form a concave portion is filled with a heat absorbing material.

A concave portion is not filled with a heat-absorbing material must be, at least in the recessed portion can be formed on the surface of a thin film containing a heat sink material. Because a film containing a heat sink material at least in the recessed portion can be formed on the surface of, so that it can also be non-sunken part of the portion is formed, for example, the other of the base plate is formed on the entire surface of the surface of.

In this specification, said heat-absorbing material of the base plate than the thermal conductivity used for the material of the high thermal conductivity of thermal conductivity of the material, the integrated circuit formed on the substrate.

According to this kind of structure, including in the integrated circuit device of the integrated circuit generated heat energy can be effectively dissipated.

Furthermore, the above-mentioned integrated circuit device may be provided in a multilayer structure (a plurality of the above-mentioned integrated circuit can be stacked).

When the integrated circuit device in a multi-layer structure are provided, adjacent the integrated circuit device can be electrically connected to each other, can also be are not connected electrically to each other.

The invention of the integrated circuit device, the integrated circuit is not formed on one surface of the base plate to form recess portions. Therefore, the surface than the other surface of the substrate has large surface area. Moreover, a concave portion is filled with a heat absorbing material, or, at least in the sunken part formed on the surface of a thin film containing a heat sink material. In this way, because it is not formed on the surface of the integrated circuit has a greater surface area, and because the heat-absorbing material and has a high heat dissipation property, so the heat generated from the integrated circuit can be effectively dissipated.

In particular, when the integrated circuit device in a multi-layer structure are provided, the heat generated by the integrated circuit the problem caused by the accumulation of more serious. This kind of situation, the above-mentioned structure also allows the heat generated by the integrated circuit to dissipate effectively. Therefore, when the integrated circuit in order to provide the multi-layer structure, the above-mentioned structure has a remarkable effect in particular.

Description of drawings

Figure 1A to 1E shows the embodiment 1 of the profiles;

Figure 2A shows the embodiment 1 and the cross section of Figure 2B shows the implementation of the mode 1 perspective;

Figure 3A shows the embodiment 1 and the cross section of Figure 3B and 3C shows the implementation of the mode 1 claivoyance;

Figure 4A to 4E shows the embodiment 2 of the profiles;

Figure 5A to 5C shows the embodiment 2 of the profiles;

Figure 6A to 6C shows the embodiment 2 of the profiles;

Figure 7A and 7B shows the embodiment 2 of the profiles;

Figure 8A to 8E shows the embodiment 3 of the profiles;

Figure 9A to 9D shows the embodiment 3 of the profiles;

Figure 10A to 10C shows the embodiment 3 of the profiles;

Figure 11 shows the embodiment 3 of the profiles;

Figure 12A to 12C shows the embodiment 4 of the profile;

Figure 13A to 13C shows the embodiment 4 of the profile;

Figure 14 shows the embodiment 4 of the profile;

Figure 15 shows the implementation of the mode 5 of profiles;

Figure 16A perspective of the Figure and 16B and 16C the diagram shows a cross section of embodiment 1;

Figure 17A perspective and Figure 17B the diagram shows a cross section of embodiment 1;

Figure 18A and 18B shows the embodiment 2 of the profiles;

Figure 19A and 19B perspective of the Figure and 19C and 19D the diagram shows a cross section of embodiment 3;

Figure 20A and 20B the diagram shows a cross section of embodiment 4;

Figure 21A to 21C showing the structure of the thin-film transistor;

Figure 22A and 22B shown by screen printing of the conductive material;

Figure 23A to 23G the electronic equipment is shown, each having a the application of the invention of the display part of the integrated circuit device;

Figure 24A to 24F the electronic equipment is shown, each having a the application of the invention of the display part of the integrated circuit device;

Figure 25A to 25C showing examples of the shape of the antenna;

Figure 26 shows the embodiment 5 of the profile;

Figure 27 shows the embodiment 5 of the profile;

Figure 28 shows the implementation of the mode 5 of profiles; and

Figure 29A and profiles of 29B the diagram shows a perspective of the embodiment 1.

Mode of execution

Is described below an embodiment of the present invention.

[Embodiment 1]

The reference Figure 1A to 3C of this embodiment is described the embodiment of the manufacturing method.

First of all, as shown in Figure 1A illustrated, prepares the base plate 101A. Substrate 101A can be a glass substrate, a quartz substrate, a metal substrate (such as ceramic substrate and a stainless steel base plate), and the like. Also can be used such as the Si substrate of the semiconductor substrate. Or, can be used such as resin substrate (plastic substrate) of the flexible substrate, polyethylene terephthalate resin substrate (Peru Time), polynaphthalic acid ethylene glycol ester (PEN), polyether sulfone (PES), such as acrylic resin. Can be through polishing smooth surface of the base plate in advance.

Furthermore, as shown in Figure 1B shown, in base plate 101A formed on the surface of the layer of the integrated circuit 102.

As shown in Figure 1C illustrated, part of the groove as a sunken 103A in substrate 101A formed on a surface of, is not formed on the surface of the layer of the integrated circuit 102 (hereafter, referred to as substrate 101A a surface of the other). Can be through etching or laser processing to form the groove 103A. Or, the groove can be formed by mechanical grinding 103A. And, with only one surface of the dent formed in advance and the convex part of the substrate can also be used as plastic substrate 101A.

Although Figure 1C groove in 103A having a rectangular shape of the cross section, it is not specifically limited to this shape. Groove 103A cross-section can have the U-shaped shape or a wedge shape, or groove 103A can have the side surface of the tapered shape.

Furthermore, as shown in Figure 1D illustrated, the use of grinding or polishing device 104 to the substrate 101A another surface of the base plate in order to reduce processing 101A thickness (thinning processing). For example, grinding base plate through the grinding device 101A, make its thickness is not greater than the 100  m, and then through the polishing apparatus for the polishing, the thickness is not greater than the the 20  m. When the substrate 101A after grinding of the surface in this manner is further while polishing, can make the substrate 101A the other surface is smooth. Here is described the implementation through grinding and then polishing examples of thinning processing; however, the invention is not limited to this, the implementation may only use grinding device for grinding processing, or only by using a polishing device to carry out polishing processing.

Furthermore, although a grinding device or polishing device to carry out substrate 101A thinning processing, this invention is not limited to this, can be carried out using a chemical treatment by etching substrate 101A thinning processing. If the glass substrate is used as substrate 101A, the liquid containing hydrofluoric acid can be used to carry out chemical etching.

Furthermore, can be the combination of the grinding processing, polishing processing and etching processing execution substrate 101A thinning processing. For example, substrate 101A thinning processing can be the grinding processing and polishing treatment performed after one or both of a chemical etching to realize, or may be performed after the etching treatment by grinding treatment and polishing treatment to realize one or two.

Grinding processing is to use the grindstone particles as the grinding device, such as, the surface of the treated object (here, substrate 101A another surface of the) peace slides grind a kind of processing. Polishing processing is to use abrasives (such as emery cloth and sand paper and the abrasive grain), by plastic smooth action or friction polishing action, smooth surface of the object to be treated is a kind of processing. Use reagent chemical treatment is treated the object of the application of a kind of treatment chemical etching. As polishing processing, can also use the CMP (chemical mechanical polishing).

Figure 1E has shown the completed substrate 101A thinning processing state. After thinning processing, the base plate is reduced as the thickness of the base plate 101B, in the other surface of the substrate the groove that is formed on the 103A is reduced to the depth of groove 103B.

Although in Figure 1E in, after the thinning of the base plate, the groove 103B having a rectangular shape of the cross section, it is not specifically limited to this shape. Thinning of the base plate of the processing before 103A of similar cross section, groove 103B cross-section can have the U-shaped shape or a wedge shape, or groove 103B can have the side surface of the tapered shape.

After thinning processing, substrate 101B is not greater than the thickness of the 100  m, preferably, is not greater than the 50  m, more preferably, not greater than 30 the  m. When the substrate 101B is not greater than the thickness of the 100 when   m, substrate 101B having a flexible; therefore, the final flexible integrated circuit device can be obtained. Furthermore, because the substrate 101B used as the protection film in order to maintain the durability of the integrated circuit device and to prevent impurity element, moisture, and the like of the component into the integrated circuit, substrate 101B not less than the thickness of the 1  m, preferably, not less than 2 the  m, more preferably, not less than 4 the  m.

Figure 2B shown in manufacturing the above-mentioned way of perspective diagram of an integrated circuit device. Figure 2A along the map is 2B A-B cross section of the line. Figure 2B are recesses 103B face-up from the base plate 101B perspective diagram as viewed from above the in the past.

Figure 2A and 2B in, without forming a layer of the integrated circuit 102 substrate 101B surface (hereafter referred to as substrate 101B the other surface) is formed on part of the groove as a sunken 103B. Figure 2A and 2B shown formed in the longitudinal direction of the groove and a groove formed in the transverse direction (in the longitudinal direction perpendicular to the groove formed by the). Note Figure 2A and 2B groove shown in 103B shape is only exemplary, the invention is not limited to this shape. Groove 103B may have any shape, as long as the integrated circuit is not formed can be formed on the surface. Therefore, for example, can be only in the longitudinal direction or in the transverse direction only form a groove in parallel.

In this embodiment, the base plate described 101B formed on the other surface of the groove as a sunken part of the situation. However, in the substrate 101B formed on another surface of the groove is not limited, as long as the substrate can be increased 101B another of the surface area of the surface of the can. Furthermore, substrate 101B formed on another surface of the sunken part of the number of (groove) can be one or more.

As mentioned earlier, when base plate 101B formed on another surface of the concave part, the base plate can be increased 101B of the surface area of the another surface.

Although in the above-mentioned description, in the base plate 101A formed on a surface of the other groove 103A later, to the base plate 101A another surface of the thinning processing, if there is no need to decrease substrate 101A thickness, the substrate does not need to be performed 101A thinning processing. However, thinning the substrate after processing 101B can be through the base plate and the thickness of the 101A thinning processing is reduced; therefore, and does not carry out substrate 101A compared with the case of thinning processing, can reduce the size of the integrated circuit device.

Furthermore, the substrate 101B the groove that is formed on the 103B filled with a heat absorbing material 110, or by CVD, sputtering, spin coating, ink jet printing, at least in the groove 103B formed on the surface of a thin film containing a heat sink material. As a heat-absorbing material, can use than substrate 101B of the material of high heat conductivity material.

For example, the thermal conductivity of the glass or quartz of the 20 the [...] is about 1W / (m·K). Therefore, if the glass substrate or a quartz substrate as a substrate 101B, can use the thermal conductivity is higher than the glass or quartz material, for example, can use the thermal conductivity of not less than 2W / (m·K), preferably not less than 10W / (m·K), more preferably not less than 100W / (m·K) material. Attention to the in this specification, said thermal conductivity 20 the thermal conductivity of the [...]. With respect to the glass substrate or quartz substrate using heat absorbing material of a specific instance, Si, metal (for example, magnesium, aluminum, hard aluminum, iron, nickel, zinc, tin, copper and the like), alloy, aluminum nitride, graphite, silicon nitride, and the like. Can also use a high concentration of these materials and polymer are mixed, such as of material obtained.

Moreover, a thermal conductivity of Si is about 148W / (m·K). Therefore, if the Si substrate is used as substrate 101B, high Si can be used than the material of the thermal conductivity, for example, its heat conductivity is not less than 150W / (m·K), preferably its thermal conductivity not less than 200W / (m·K). The use of Si can be relative to the heat-absorbing material with a specific instance, aluminum nitride, aluminum, duralumin, copper and the like. Can also use a high concentration of these material and polymer are mixed, such as of material obtained.

Figure 3A and 3B show the examples of this kind of structure. Figure 3A and 3B have shown the groove 103B filled with a heat absorbing material 110 of the situation. Note Figure 3B shows a perspective drawing of an integrated circuit device, Figure 3A is basiscopic 3B A-B cross section of the line.

In Figure 29A and 29B shown embodiment, form a groove on the 103B substrate 101B formed on the whole surface of the film comprising heat-absorbing material 120, at least in the groove as the 103B formed on the surface of a film containing a heat sink material examples of the situation. Note Figure 29B is perspective drawing of an integrated circuit device, Figure 29A along the map is 29B A-B cross section of the line.

According to this kind of structure, substrate 101B can have another surface of the surface area of the larger, and as the heat absorbing material and has a high heat dissipation property; therefore, the heat generated from the integrated circuit can be easily abreactions.

Figure 3A and 3B in, one of its use of the integrated circuit is formed on the surface of a substrate. The invention can be more effectively applied to the with this structure, the integrated circuit device: wherein a plurality of base plates are stacked, each base plate has formed thereon the surface of the integrated circuit. When the stack each have a plurality of the integrated circuit when the base plate, the occupied area can be reduced, and so can be miniaturized integrated circuit device. However, because the integrated circuit stack, the heat generated from the integrated circuit is not easy to abreactions. Each of the base plate if the integrated circuit is not formed is formed on the surface of the concave portion, and concave portion is filled with a heat absorbing material or at least in the sunken part formed on the surface of a thin film containing a heat sink material, from each of the stacked integrated circuit device of the heat generated in the integrated circuit can be easily abreactions. With this structure, the integrated circuit in fig. 3C shown in.

Figure 3C shown three OZP 3A and 3B shown in the situation of the stacked integrated circuit device. Although in Figure 3C in, stack the three substrate 101B (each having a layer of the integrated circuit), the number of stacked substrate is not limited to three, can be two or more.

Heat-absorbing material does not need to be made by a kind of material, can be stacked two or more kinds of material or can be formed in the different places of the two or more kind of material.

If multiple substrate stack, different integrated circuit formed on the substrate can be electrically connected to each other, or are not electrically connected.

In this embodiment, the base plate 101A the other surface before thinning processing, the substrate 101A formed on another surface of the groove. However, the base plate can be 101A reduction of the another surface of the substrate after processing 101A formed on another surface of the groove.

[Embodiment 2]

In this embodiment, reference with photos, than the embodiment 1 is more described specifically a semiconductor device of the present invention of the embodiment of the manufacturing method. The embodiment has described a kind of situation, including thin film transistor integrated circuit as the integrated circuit are formed.

First of all, as shown in Figure 4A shown, to the base plate 1st 201A. 1st substrate 201A can be a glass substrate, a quartz substrate, a metal substrate (such as ceramic substrate and a stainless steel base plate), and the like. Also can be used such as the Si substrate of the semiconductor substrate. Or, can be used such as resin substrate (plastic substrate) of the flexible substrate, polyethylene terephthalate resin substrate (Peru Time), polynaphthalic acid ethylene glycol ester (PEN), polyether sulfone (PES), such as acrylic resin. Can be through polishing smooth surface of the base plate in advance.

Furthermore, as shown in Figure 4B shown, in base plate 1st 201A formed on one surface of a base film used as the insulating film 203, in the insulating film 203 is formed on the semiconductor thin-film 204.

By CVD, sputtering, etc. form the insulating film 203, the oxygen-containing or nitrogen with a packet of the insulating thin film of single-layer structure or a laminated structure, comprising an oxygen or nitrogen, an insulating film is, for example, a silicon oxide film, silicon nitride film, silicon oxynitride film (SiO_x N_y) (x>y> 0) and silicon oxynitride (SiN_x O_y) (x>y> 0) thin film. For example, if insulating film 203 has two-layer structure, the silicon oxynitride may be formed to a 1st insulating film, a silicon oxynitride film may be formed as an insulating film 2nd. At the same time, if the insulating film 203 has a three-layer structure, a silicon oxynitride film may be formed as an insulating film 1st, silicon oxynitride film may be formed as an insulating film 2nd, oxygen of the silicon nitride film may be formed as an insulating film 3rd. When the thus formed is used as a base film of the insulating film 203, , such as Na this can prevent alkali metal or alkaline earth metal from base plate 1st 201A diffused into the semiconductor film 204 in, the characteristics of the semiconductor element by a negative impact.

The semiconductor film 204 can be made of an amorphous semiconductor or a semi-amorphous semiconductor is made (SAS). Can also use the polycrystalline semiconductor thin film. SAS is provided with a non-crystalline structure and crystal structure is (comprises a single crystal structure and a polycrystalline structure) between the middle of the semiconductor structure. This kind of semiconductor having free can be stably 3rd state, and it comprises a short range order of the crystal region, and the lattice distortion. In SAS at least a portion of the thin film can be observed in 0.5-20 nanometer wide crystal region, and if mainly comprising silicon, than Raman spectrum toward 520 centimeter^-1 low wave number. SAS with that of the silicon lattice is derived from (111) and (220) diffraction peak of the X-ray diffraction pattern. And, mixed with SAS at least 1atomic % hydrogen or halogen. The glow discharge of the silicon compound gas (plasma CVD) belongs SAS obtained. As the silicon compound gas, not only can use SiH₄, can also use Si₂ H₆, SiH₂ Cl₂, SiHCl₃, SiCl₄, SiF₄, and the like. Furthermore, GeF₄ can be mixed into the gas. Silicon compound gas can also be H₂ or H₂ with one or more selected from He, Ar, Ne Kr and dilution of the inert gas element. If silicon compound gas is diluted, the dilution ratio of 2-1000, pressure is set up in 0.1-133 Pa, and the power supply frequency is set in 1-120MHz, are preferably disposed in 13-60MHz. The base plate can be not higher than 300 the temperature of heating under [...]. In the thin film in the impurity elements, methods to, atmosphere of nitrogen and carbon so that the concentration of the impurity element is not greater than 1 × 10²⁰ centimeter^-1. In particular, the concentration of oxygen is preferably not greater than 5 × 10¹⁹ centimeter^-3, more preferably not greater than 1 × 10¹⁹ centimeter^-3. In this embodiment, by sputtering, CVD, etc. mainly comprising silicon (Si) material (such as Si_x Ge_1-x, etc.) forming an amorphous semiconductor thin film, such as by laser crystallization, RTA or annealing furnace, a thermal crystallization of use and of a metal element promoting crystallization, thermal crystallization method, the crystallization of the amorphous semiconductor thin film is crystallized. Or, by applying a DC bias voltage can be used to produce thermal plasma make the semiconductor thin-film crystallization.

Furthermore, as shown in Figure 4C shown, selectively etching a semiconductor thin-film 204 in order to form the island-shaped semiconductor film 206a to 206c, forming and covering the island-shaped semiconductor film 206a to 206c of the gate insulation film 207.

By CVD, sputtering, a gate insulating film 207, so that the oxygen-containing or nitrogen with a packet of the insulating thin film of single-layer structure or a laminated structure, comprising an oxygen or nitrogen, an insulating film is, for example, a silicon oxide film, silicon nitride film, silicon oxynitride (SiO_x N_y) (x>y> 0) thin film and the silicon oxynitride (SiN_x O_y) (x>y> 0) thin film. Can also be through a high-density plasma processing oxidizing or nitriding island-shaped semiconductor film 206a to 206c is formed on the surface of the gate insulating film. In an oxygen atmosphere (for example, including oxygen (O₂) and a rare gas (containing He, Ne, Ar, Kr and Xe at least one of them) atmosphere, or includes oxygen, hydrogen (H₂) and rare gas atmosphere); or in the nitrogen atmosphere (for example, including nitrogen (N₂) and a rare gas (containing He, Ne, Ar, Kr and Xe at least one of them) of the atmosphere, including nitrogen, hydrogen and inert gas atmosphere, or includes NH₃ and rare gas atmosphere) in the implementation of high-density plasma processing. When through a high-density plasma processing oxidizing or nitriding island-shaped semiconductor film 206a to 206c the obtained oxide layer or nitride layer when forming a gate insulating film, and through the CVD, sputtering method, compared with a film formed, the gate insulating film of the thin film thickness with advantage in, and has high density.

Furthermore, as shown in Figure 4D shown, selectively in the gate insulating film 207 forming a gate electrode on the 208a to 208c, therefore, form the thin-film transistor 205a to 205c.

Thin film transistor 205a to 205c in, each of the semiconductor thin film 206a to 206c used as a part of the channel region, the gate electrodes are respectively formed and 208a to 208c the side wall of the contact with the side surface of 209a to 209c (hereafter also referred to as the insulating films 209a to 209c).

N-channel thin-film transistor 205a and 205c respectively in each of the insulating films 209a and 209c of the semiconductor under 206a and 206c has LDD region. Specifically, a source region or a drain region in the LDD region formed between the channel region. In the P-channel thin-film transistor 205b in the LDD region is not provided. The insulating film 209b semiconductor thin film under 206b source and drain regions is formed in.

Can use selected from tantalum (Ta), tungsten (W), titanium (Ti), molybdenum (Mo), aluminum (Al), copper (cubic), chromium (Cr), niobium (Nb) element, or mainly comprising this kind of the elemental alloy material or a compound material, through the CVD, sputtering a gate electrode such as 208a to 208c, so that it has a single-layer structure or a laminated structure. Gate electrode 208a to 208c can also be is formed by semiconductor material, the semiconductor material in a doped with the impurity element (for example, phosphorus) in the polycrystalline silicon. For example, the laminated structure of tantalum and tungsten nitride.

By CVD, sputtering, etc. form the insulating film 209a to 209c, the following thin film has the single layer structure or a laminated structure of the: bag oxygen-containing or nitrogen, an insulating film, for example, silicon oxide film, silicon nitride film, silicon oxynitride (SiO_x N_y) (x>y> 0) thin film and the silicon oxynitride (SiN_x O_y) (x>y> 0) film; or a thin film containing carbon, such as DLC (diamond-like carbon).

Furthermore, form the insulating film 210 and the insulation film 211 so as to cover the thin film transistor 205a to 205c.

By CVD, sputtering, etc. form the insulating film 210, the following thin film has the single layer structure or a laminated structure of the: bag oxygen-containing or nitrogen, an insulating film, for example, silicon oxide film, silicon nitride film, silicon oxynitride (SiO_x N_y) (x>y> 0) thin film and the silicon oxynitride (SiN_x O_y) (x>y> 0) film; or a thin film containing carbon, such as DLC (diamond-like carbon).

By CVD, sputtering, etc. form the insulating film 211, the following thin film has the single layer structure or a laminated structure of the: bag oxygen-containing or nitrogen, an insulating film, for example silicon oxide film, silicon nitride film, silicon oxynitride (SiO_x N_y) (x>y> 0) thin film and the silicon oxynitride (SiN_x O_y) (x>y> 0) film; such as DLC (present) of the thin film containing carbon; or a film made of organic material, said organic material such as epoxy resin, polyimide, polyamide, polyvinyl phenol, benzocyclobutene, and an acrylic resin, such as silicone resin, oxazole resin such a silicone material. Si-O-Si silicone material comprises material of the key. Siloxane comprises silicon (Si) and oxygen (O) bond forming the skeleton, which includes at least containing hydrogen organic group (for example alkyl or aromatic) as a substituent. Or, the fluoro group can be used as the substituent. And, optionally, fluorine-based and at least containing hydrogen of the organic group can be used as the substituent. Oxazole resin is, for example, photosensitive polyphenyl diozaiole. Photosensitive polyphenyl diozaiole has a low dielectric constant (the 1MHz and temperature has a dielectric constant of 2.9), high thermal resistance (in 5 the [...] /minutes of high temperature, thermal decomposition temperature is 550 the [...] , this by TGA: thermal gravity analysis (  Analysisi   Gravity Thermal) measurement) and the rate of low of the (room temperature 24 hours 0.3%). And polyimide, and the like (approximately 3.2-3.4) compared, oxazole resin has a low relative dielectric constant (about 2.9); therefore, the generation of parasitic capacitance can be suppressed and high speed operation. Note in Figure 4A to 4E in, is not required to provide insulating film 210, can be formed for directly covering the thin film transistor 205a to 205c insulating film 211.

Furthermore, as shown in Figure 4E shown, selectively remove the insulating film 211, insulating film 210, and the like, thereby forming the opening 212a to 212f, to expose the thin film transistor 205a to 205c a semiconductor thin film in 206a to 206c of a portion of a source region or a drain region.

Furthermore, as shown in Figure 5A shown, forming the semiconductor thin film 206a to 206c is electrically connected with a source region or a drain region of the electrode 214. Furthermore, forming and covering the electrode 214 is used as the protective film of the insulating thin film 215.

Can use selected from the group consisting of aluminum (Al), tungsten (W), titanium (Ti), tantalum (Ta), molybdenum (Mo), nickel (Ni), platinum (Pt), copper (cubic), gold (Au), silver (Ag), manganese (Mn), neodymium (Nd) and carbon (C) element, or the alloy of these elements, by CVD, sputtering, screen printing, droplet release, dispenser (dispenser   method) method for forming electrodes such as 214, so that it has a single-layer structure or a laminated structure. For example, as comprising these elements is made from an alloy of some of the conductive thin film, can be used and C Al comprising the Ti alloy, the alloy comprising Ni Al, and C Al comprising the Ni alloy, the Mn includes C Al alloy and the like and. If the laminated structure, for example, Ti can be sequentially stacked, Al and Ti.

By CVD, sputtering, etc. form the insulating film 215, the following thin film has the single layer structure or a laminated structure of the: bag oxygen-containing or nitrogen, an insulating film, for example silicon oxide film, silicon nitride film, silicon oxynitride film (SiO_x N_y) (x>y> 0) and silicon oxynitride (SiN_x O_y) (x>y> 0) film; such as DLC (present) of the thin film containing carbon; or a film made of organic material, said organic material such as epoxy resin, polyimide, polyamide, polyvinyl phenol, benzocyclobutene, and an acrylic resin, or silicone material such as silicone resin.

Furthermore, as shown in Figure 5B illustrated, the insulating film 215 is formed on the electrode 216, with the electrode 214 is electrically connected, the electrode 214 and the thin film transistor 205a is electrically connected with the source region or the drain region. Can use and the electrode 214 the same method and material forming the electrode 216.

Furthermore, as shown in Figure 5C shown, the UV separation of the thin-film 217 is adhered to the insulating thin film 215 and the electrode 216. UV separation of the thin-film 217 having such structure, wherein the substrate is made of a resin material of the thin film 219 provided on the adhesive layer 218. The adhesive layer 218 formed by resin material, its adhesion through UV (ultraviolet) radiation is weakened. Thin film is used as the material of the substrate, for example, can use the polyester, Peru Time (polyethylene terephthalate), PEN (polynaphthalic acid terephthalate) and the like.

Although here the use of UV separation of the thin-film, can be used to separate the UV adhesive (a kind of adhesive, the adhesion by UV (ultraviolet) radiation weakening) 2nd base plate to replace the UV separation of the thin-film. Or, thermal separation of the thin-film can be used instead of UV separation of the thin-film, or can use the thermal separating adhesive (an adhesive, by heating the weakened adhesion) adhesion 2nd base plate. Thermal separation of the thin-film having this kind of structure, wherein, the substrate thin film is formed on the adhesive layer, the adhesive layer is formed by resin material, its adhesion is weakened by heating. If the use of heat separating film or thermal separation of adhesive adheres 2nd base plate, in the follow-up steps to implement treatment instead of UV irradiation.

Furthermore, as shown in Figure 6A shown, the integrated circuit is not formed (thin-film transistor 205a to 205c) of base plate 1st 201A surface (hereafter referred to as substrate 201A the other surface) is formed on part of the groove as a sunken 220A. Can be through etching or laser processing to form the groove 220A. Can also form a groove by mechanical grinding 220A. Moreover, only one surface of the concave and the convex portion is formed in advance of the plastic substrate can be used as base plate 1st 201A.

Although Figure 6A in, groove 220A having a rectangular shape of the cross section of, the invention is not limited to this shape. Groove 220A cross-section can have the U-shaped shape or a wedge shape, or groove 220A can have the side surface of the tapered shape.

Furthermore, as shown in Figure 6B shown, in order to reduce base plate 1st 201A thickness, the use of grinding or polishing device 221 to base plate 1st 201A processing on the other surface of (thinning processing). For example, the base plate through the grinding device grinding and 1st 201A, make its thickness is not greater than the 100  m, then, through the polishing device for polishing, make its thickness is not greater than the 20  m. When the 1st substrate 201A grinding surface in this manner is further while polishing, substrate 1st 201A the other surface can be smooth. Described here is to use grinding device grinding and then utilize the polishing device polishing the implementation examples of thinning processing; however, the invention is not limited to this, the implementation may only use grinding device for grinding processing, or only by using a polishing device to carry out polishing processing.

Furthermore, despite the adoption of the grinding device and polishing device implementation base plate 1st 201A thinning processing, this invention is not limited to this, using a chemical treatment can be carried out by etching the base plate 1st 201A thinning processing. If the glass substrate used as the base plate 1st 201A, the liquid containing hydrofluoric acid can be used to carry out chemical etching.

And, can be the combination of the grinding processing, polishing processing and etching treatment the implementation substrate 1st 201A thinning processing. For example, base plate 1st 201A thinning processing can be through the grinding treatment and polishing treatment performed after one or both of a chemical etching to realize, or may be performed after the etching treatment by grinding treatment and polishing treatment to realize one or two.

Figure 6C has shown the completed base plate 1st 201A thinning processing state. After thinning processing, 1st base plate is reduced as the thickness of the base plate 201B, in 1st on the other surface of the substrate is formed of 220A is reduced to the depth of groove 220B.

Although in Figure 6C in, after the thinning of the base plate, the groove 220B having a rectangular shape of the cross section, it is not particularly limited to this shape. Thinning of the base plate of the processing before 220A of similar cross section, groove 220B cross-section can have the U-shaped shape or a wedge shape, or groove 220B can have the side surface of the tapered shape.

Thinning processing after the base plate 1st 201B is not greater than the thickness of the 100  m, preferably, is not greater than the 50  m, more preferably, not greater than 30 the  m. When the 1st substrate 201B is not greater than the thickness of the 100 when   m, 1st base plate 201B having a flexible; therefore, the final flexible integrated circuit device can be obtained. Furthermore, because the base plate 1st 201B used as the protection film in order to maintain the durability of the integrated circuit device and to prevent impurity element, moisture and the like in the component into the integrated circuit, therefore, 1st base plate 201B not less than the thickness of the 1  m, preferably, not less than 2 the  m, more preferably, not less than 4 the  m.

In 1st substrate 201B formed on another surface of the groove are not limited to, the base plate can be increased as long as the 1st 201B another of the surface area of the surface of the can.

Although not shown, similar to embodiment 1, the groove 220B filled with a heat absorbing material or at least in the groove 220B formed on the surface of a thin film containing a heat sink material.

In this way, the part of the groove as a sunken 220B in 1st substrate 201B formed on the other surface, the groove 220B filled with a heat absorbing material or at least in the groove 220B formed on the surface of the a film containing a heat sink material, the base plate 1st 201B can have another surface of the surface area of the larger, and as the heat absorbing material can have a higher heat radiating property; therefore, the heat generated from the integrated circuit can be easily abreactions.

Furthermore, as shown in Figure 7A illustrated, the use of UV irradiation (ultraviolet light) UV (ultraviolet) separation of the thin-film 217, in order to separate is adhered to the insulating thin film 215 and the electrode 216 UV (ultraviolet) of the separation of the thin-film 217. (Ultraviolet) through the UV irradiation, UV separation of the thin-film 217 of the adhesive layer 218 weaken the adhesion of the, can be separated by the separation of the thin-film UV 217.

If the use of the thermal separation of the thin-film, rather than UV separating film or use the 2nd thermal separation adhesive insulating film is adhered to the base plate 215 and the electrode 216, the implementation is not heat treatment and UV (ultraviolet) radiation. Through the heat treatment, thermal separation of the thin-film in the adhesion of the adhesive layer of the adhesive or thermal separating weakened adhesion, can be separated from this thermal separation of the thin-film or 2nd base plate.

Through the above-mentioned steps, can obtain OZP 7B integrated circuit device is shown.

Although Figure 4A to 7B shown in the 1st is formed on the substrate having a thin film transistor of the embodiment of the integrated circuit, the invention is not limited to this. As an integrated component of the circuit,   i S can be provided such as the use of the substrate as a semiconductor substrate of the field effect transistor (FET) of the channel, or can be provided as a channel using an organic material of the organic thin-film transistor (TFT).

Included in the semiconductor device of this invention of the thin film transistor of the structure is not limited to that described above. For example, in Figure 4D in, are respectively in N-channel thin-film transistor 205a and 205c gate electrode 208a and 208c is formed at the side surface of the insulating thin film 209a and 209c semiconductor thin film under 206a and 206c LDD region provided in, the P-channel thin-film transistor 205b in the LDD region is not provided. However, this kind of structure can be adopted, wherein, the channel thin-film transistor and N P-channel thin-film transistor with LDD region are provided, or adopting this kind of structure, wherein the channel thin-film transistor and N P-channel thin-film transistor of the LDD region is not provided (Figure 21A). Furthermore, the thin film transistor structure of the kind referred to above are not limited to, a can adopt the structure of the channel-forming region of the one grid, and multi-gate structure, for example includes two channel forming area of the double-gate structure and comprises three channel forming area of the tri-gate structure. But can adopt the bottom gate structure or a double gate structure (wherein the channel formation region and the lower forming two gate electrode, the gate insulating film interposed therebetween). If each gate electrode having 1st conductive film 227a to 227c and 1st conductive film 227a to 227c formed on the conductive film 2nd 228a to 228c of the laminated structure, LDD region can be provided, so that the conductive thin film with the 1st 227a to 227c and the crossover 2nd conductive film 228a to 228c (Figure 21B) crossover. Moreover, if each gate electrode has a 1st conductive film 227a to 227c and 1st conductive film 227a to 227c formed on the conductive film 2nd 228a to 228c of the laminated structure, the conductive thin film can be in the 1st 227a to 227c and 2nd conductive film 228a to 228c the side wall of the contact (Figure 21C). The above-mentioned structure, is used as a source region or a drain region of the semiconductor thin film of the impurity regions can be formed by Ni, Co, W, Mo and the like made of silicide.

Although in the description of the above, in the substrate 201A formed on a surface of the other groove 220A later, to the base plate 201A another surface of the thinning processing, if there is no need to decrease substrate 201A thickness, the substrate does not need to be performed 201A thinning processing. However, through the base plate 201A thinning processing, after processing the substrate thinning 201B the thickness can be reduced; therefore, and does not carry out substrate 201A compared with the case of thinning processing, can reduce the size of the integrated circuit device.

Heat-absorbing material may be made by a kind of material, can be stacked two or more kind of material or can be formed in different places of the two or more kind of material.

This embodiment is shown of the structure and can be other embodiments and in conjunction with the embodiment.

[Embodiment 3]

In this embodiment, reference with photos, than the embodiment 1 is more described specifically the present invention provides a semiconductor device manufacturing method of the embodiment, the embodiment is different from embodiment 2 example. The embodiment has described a kind of situation, including thin film transistor integrated circuit as the integrated circuit are formed.

First of all, as shown in Figure 8A illustrated, by etching, laser irradiation in the base plate 1st 301A formed on the surface of the concave part 302. Replace the base plate 1st 301A to form recess portions on the surface of, the base plate can be formed from the 1st 301A the one surface of the other through the opening of the one surface. The sunken part 302 (or opening, if it exists) may have any shape, for example, linear, circular, rectangular, and the like. The sunken part 302 is preferably the depth of the 1-100  m, more preferably 2-50 the  m, and the concave part 302 is preferably the width of the 10 the m-10mm, more preferably 100 subsidence m-1mm. If formed is not opening of the concave portion, the width of the opening is preferably a 10 subsidence m-10mm, more preferably 100 subsidence m-1mm. The attention of the depressed portion formed on the substrate in the depth direction or the opening can have a tapered shape.

Furthermore, as shown in Figure 8B shown, in base plate 1st 301A used as a base film is formed on the insulating film 303, in the insulating film 303 is formed on the semiconductor thin film 304. Note, the insulating thin film 303 and semiconductor thin film 304 is also in the sunken part 302 formed in.

By CVD, sputtering, etc. form the insulating film 303, the oxygen-containing or nitrogen with a packet of the insulating thin film of single-layer structure or a laminated structure, comprising an oxygen or nitrogen, an insulating film is, for example, a silicon oxide film, silicon nitride film, silicon oxynitride (SiO_x N_y) (x>y> 0) thin film and the silicon oxynitride (SiN_x O_y) (x>y> 0) thin film. For example, if the insulating film 303 having two layer structure, silicon oxynitride film may be formed as a 1st insulating film, a silicon oxynitride film may be formed as an insulating film 2nd. At the same time, if the insulating film 303 has a three-layer structure, a silicon oxynitride film may be formed as an insulating film 1st, silicon oxynitride film may be formed as an insulating film 2nd, and silicon oxynitride film may be formed as an insulating film 3rd. When the thus formed is used as a base film of the insulating film 303 time, such as Na this can prevent alkali metal or alkaline earth metal from base plate 1st 301A diffused into the semiconductor thin film 304 in, the characteristics of the semiconductor element by a negative impact.

Semiconductor thin film 304 can be made of an amorphous semiconductor or a semi-amorphous semiconductor is made (SAS). Can also use the polycrystalline semiconductor thin film.

Furthermore, as shown in Figure 8C shown, selectively etching a semiconductor thin film 304 in order to form the island-shaped semiconductor film 306a to 306c, and forming and covering the island-shaped semiconductor film 306a to 306c of the gate insulation film 307.

By CVD, sputtering, a gate insulating film 307, the oxygen-containing or nitrogen with a packet of the insulating thin film of single-layer structure or a laminated structure, comprising an oxygen or nitrogen, an insulating film is, for example, a silicon oxide film, silicon nitride film, silicon oxynitride (SiO_x N_y) (x>y> 0) thin film and the silicon oxynitride (SiN_x O_y) (x>y> 0) thin film. Can also be through a high-density plasma processing oxidizing or nitriding island-shaped semiconductor film 306a to 306c formed on the surface of the gate insulating film 307. In an oxygen atmosphere (for example, including oxygen (O₂) and a rare gas (containing He, Ne, Ar, Kr and Xe at least one of them) atmosphere; or include oxygen, hydrogen (H₂) and rare gas atmosphere); or in the nitrogen atmosphere (for example, including nitrogen (N₂) and a rare gas (containing He, Ne, Ar, Kr and Xe at least one of them) atmosphere; including nitrogen, hydrogen and inert gas atmosphere; or includes NH₃ and rare gas atmosphere) in the implementation of high-density plasma processing. When through a high-density plasma processing oxidizing or nitriding island-shaped semiconductor film 306a to 306c the obtained oxide layer or nitride layer when forming a gate insulating film, and through the CVD, sputtering method, compared with a film formed, the gate insulating film of the thin film thickness with advantage in, and has high density.

Furthermore, as shown in Figure 8D shown, selectively in the gate insulating film 307 a gate electrode on the 308a to 308c, therefore, form the thin-film transistor 305a to 305c.

In the thin-film transistor 305a to 305c in, each of the semiconductor thin film 306a to 306c used as a part of the channel region, the gate electrodes are respectively formed and 308a to 308c of contact with the side surface of side wall 309a to 309c (hereafter referred to as insulating film 309a to 309c).

N-channel thin-film transistor 305a and 305c in each of the thin insulating film 309a and 309c semiconductor thin film under 306a and 306c are respectively provided with a LDD region in. Specifically, the LDD region of a source region or a drain region is formed between and the channel region. In the P-channel thin-film transistor 305b in the LDD region is not provided, the insulating thin film and 309b semiconductor thin film under 306b source and drain regions is formed in.

Can use selected from tantalum (Ta), tungsten (W), titanium (Ti), molybdenum (Mo), aluminum (Al), copper (cubic), chromium (Cr), niobium (Nb) and other elements, or the elements comprising this kind of the alloy or compound, through the CVD, sputtering a gate electrode such as 308a to 308c, so that it has a single-layer structure or a laminated structure. Gate electrode 308a to 308c can also be is formed by semiconductor material, the semiconductor material in a doped with the impurity element (for example, phosphorus) in the polycrystalline silicon. For example, the laminated structure of tantalum and tungsten nitride.

By CVD, sputtering, etc. form the insulating film 309a to 309c, the following thin film has the single layer structure or a laminated structure of the: bag oxygen-containing or nitrogen, an insulating film, for example silicon oxide film, silicon nitride film, silicon oxynitride (SiO_x N_y) (x>y> 0) thin film and the silicon oxynitride (SiN_x O_y) (x>y> 0) film; or such as DLC (present) of the thin film containing carbon.

Furthermore, form the insulating film 310 and the insulation film 311 in order to cover the thin film transistor 305a to 305c.

By CVD, sputtering, etc. form the insulating film 310, the following thin film has the single layer structure or a laminated structure of the: bag oxygen-containing or nitrogen, an insulating film, for example silicon oxide film, silicon nitride film, silicon oxynitride (SiO_x N_y) (x>y> 0) thin film and the silicon oxynitride (SiN_x O_y) (x>y> 0) film; or such as DLC (present) of the thin film containing carbon.

By CVD, sputtering, etc. form the insulating film 311, the following thin film has the single layer structure or a laminated structure of the: bag oxygen-containing or nitrogen, an insulating film, for example silicon oxide film, silicon nitride film, silicon oxynitride (SiO_x N_y) (x>y> 0) thin film and the silicon oxynitride (SiN_x O_y) (x>y> 0) film; such as DLC (present) of the thin film containing carbon; or a film made of organic material, the organic material such as epoxy resin, polyimide, polyamide, polyvinyl phenol, benzocyclobutene, and an acrylic resin, such as silicone resin of such a siloxane material. Note in Figure 8A to 8E in, is not required to provide insulating film 310, can directly form a gate electrode 308a to 308c insulating film 311.

Furthermore, as shown in Figure 8E shown, selectively remove the insulating film 311, an insulating film 310, and the like, thereby forming the opening 312a to 312f, thus exposed is used as the thin film transistor 305a to 305c source and drain regions of the semiconductor thin film 306a to 306c a part of.

Furthermore, as shown in Figure 9A shown, in the sunken part 302 is formed on the insulating film 311 is selectively removed, and the like, thereby forming the opening 313. Opening 313 only is formed such that the opening in the subsequent step 313 formed in the electroconductive thin film 314 in the plate 1st 301A exposed in a thinning processing. Therefore, by selectively removing the insulating film 311 a portion of, selectively remove the insulating film 311 and the insulation film 310, or selectively remove the insulating film 311, an insulating film 310 and the insulation film 303, forming the opening 313. Furthermore, although shown here the formation of the openings 312a to 312f after forming the opening 313 example, opening 313 can be and the opening 312a to 312f formed at the same time, or the formation of the openings 312a to 312f formed before. Or, can be in the form of the opening 312a to 312f and in the opening 312a to 312f is selectively formed in the conductive thin film, forming the opening 313. Opening 312a to 312f and the opening 313 through the use of an etching or photolithography step is formed by laser irradiation.

Furthermore, as shown in Figure 9B shown, in the opening 312a to 312f and the opening 313 is selectively formed in the conductive thin film 314, thereby forming the thin-film transistor 305a to 305c each of the source region or drain region is electrically connected with the electrodes. The thin-film transistor 305c one of source and drain regions of the electrically connected with the electrode in the opening 303 extends. Furthermore, a cover electrode 314 is used as the protective film of the insulating film 315.

Can use selected from the group consisting of aluminum (Al), tungsten (W), titanium (Ti), tantalum (Ta), molybdenum (Mo), nickel (Ni), platinum (Pt), copper (cubic), gold (Au), silver (Ag), manganese (Mn), neodymium (Nd) and carbon (C) element, or contains some of these elements in the alloy, by plasma CVD, sputtering, screen printing, droplet release, the dispenser method for forming a conductive thin film, such as 314, so that it has a single-layer structure or a laminated structure. For example, as by comprising these elements is made from an alloy of some of the conductive thin film, can be used and C Al comprising the Ti alloy, the alloy comprising Ni Al, and C Al comprising the Ni alloy, the Mn includes C Al alloy and the like and. If the laminated structure, for example, Ti can be sequentially stacked, Al and Ti.

Furthermore, when the opening 313 or when taking into account the very large opening 313 provided in the electroconductive thin film 314 a defect in the connection of the (for example, disconnect the connection), preferably, at the opening 313 to provide conductive film 314 later, again for opening selectively 313 to provide an electrically conducting material. For example, through the CVD, sputtering, and the like in the opening 312a to 312f and the opening 313 is selectively formed in the conductive thin film 314 later, through silk-screen printing, droplet release, the dispenser method and the like in the opening 313 is formed in the electroconductive thin film 314 to the formation of conductive materials.

In this embodiment, as shown in Figure 22A illustrated, using screen printing method, from the emulsion 382 openings provided in the 385 extrusion ointment 384, and using a rubber roll 383 to promote, in order to make the ointment 384 in the web 381 is mobile, the opening 313 forming a conductive material in 386.

Or, as shown in Figure 22B shown, through the CVD or sputtering, the opening 312a to 312f formed on the conductive thin film 314 later, can be through silk-screen printing, droplet release, the dispenser method and the like in the opening 313 selectively providing a conductive material in 386. When such through silk-screen printing, droplet release, the dispenser method and the like in the opening 313 in conductive material is selectively provided, can prevent the opening 313 of the conductive thin film, such as disconnect the connection, and until the opening is filled with conductive material 313 at the bottom of the of.

By CVD, sputtering, etc. form the insulating film 315, the following thin film has the single layer structure or a laminated structure of the: bag oxygen-containing or nitrogen, an insulating film, for example silicon oxide film, silicon nitride film, silicon oxynitride (SiO_x N_y) (x>y> 0) thin film and the silicon oxynitride (SiN_x O_y) (x>y> 0) film; such as DLC (present) of the thin film containing carbon; or a film made of organic material, said organic material such as epoxy resin, polyimide, polyamide, polyvinyl phenol, benzocyclobutene, and an acrylic resin, silicone resin or such as such a silicone material.

Furthermore, as shown in Figure 9C illustrated, the separation of the thin-film UV 317 is adhered to the insulating thin film 315. UV separation of the thin-film 317 having such structure, wherein the substrate is made of a resin material film 319 to provide an adhesive layer 318. The adhesive layer 318 is formed by resin material, its adhesion is irradiated by UV (ultraviolet) is weakened. Thin film is used as the material of the substrate, for example, can use the polyester, Peru Time (polyethylene terephthalate), PEN (polynaphthalic acid terephthalate) and the like.

Although here the separation of the thin-film UV, replace the UV separation of the thin-film, can be used to separate the UV adhesive (a kind of adhesive, the adhesion by UV (ultraviolet) radiation weakening) adhesion 2nd base plate. Or, thermal separation of the thin-film can be used instead of UV separation of the thin-film, or can use the thermal separating adhesive (a kind of adhesive, its adhesive force is weakened by heating) adhesion 2nd base plate. Thermal separation of the thin-film having this kind of structure, wherein, the substrate thin film is formed on the adhesive layer, the adhesive layer is formed by resin material, its adhesion is weakened by heating. If the use of heat separating film or thermal separation of adhesive adheres 2nd base plate, in the follow-up steps to implement treatment instead of UV irradiation.

Furthermore, as shown in Figure 9D shown, of the integrated circuit is formed over the base plate 1st 301A surface (hereafter referred to as 1st substrate 301A the other surface) is formed on part of the groove as a sunken 320A. Can be through etching or laser processing to form the groove 320A. Can also form a groove by mechanical grinding 320A. Moreover, only one surface of the concave and the convex portion is formed in advance of the plastic substrate can be used as base plate 1st 301A.

Although Figure 9D in, groove 320A cross-section has a rectangular form, but it is not limited to this shape. Groove 320A cross-section can have the U-shaped shape or a wedge shape, or groove 320A can have the side surface of the tapered shape.

Furthermore, as shown in Figure 10A shown, in order to reduce base plate 1st 301A thickness, the use of grinding or polishing device 321 to the 1st substrate 301A processing on the other surface of (thinning processing). For example, the base plate through the grinding device grinding and 1st 301A, make its thickness is not greater than the 100  m, then, the base plate through the polishing device to the 1st 301A the grinding of the surface to be polished, make its thickness is not greater than the 20  m. When the 1st substrate 301A in this grinding of the surface of the further polishing a manner, the base plate 1st 301A the other surface can be smooth. Is described herein through the grinding device grinding and then through the polishing device polishing the implementation examples of thinning processing; however, the invention is not limited to this, the implementation may only use grinding device for grinding processing, or only by using a polishing device to carry out polishing processing.

Furthermore, although the substrate 301A thinning processing through grinding apparatus and polishing device to carry out, but the invention is not limited to this, substrate 301A thinning can be through etching the implementation using a chemical treatment. If the glass substrate is used as substrate 301A, the liquid containing hydrofluoric acid can be used to carry out chemical etching.

And, can be the combination of the grinding processing, polishing processing and etching processing execution substrate 301A thinning processing. For example, substrate 301A thinning processing can be through the grinding treatment and polishing treatment performed after one or both of the chemical etching, or may be performed after the etching treatment by grinding treatment and polishing treatment to realize one or two.

Implementation of substrate 301A thinning processing, as shown in Figure until 10B shown, opening 2313 formed in the conductive thin film 314 is exposed. If Figure 22A shown, opening 313 formed on the conductive thin film 314 and a conductive material 386, 1st base implementation 301A thinning processing, until the conductive film 314 and a conductive material 386 one of them or both are exposed. At the same time, as shown in Figure 22B shown, if in the opening 313 forming a conductive material in 386, 1st base implementation 301A thinning processing until the exposed conductive material 386 so far. Therefore, when the in the opening 313 conductive thin film 314 or conductive material 386 lower form the insulating film 310, an insulating thin film 303 is such as, in the plate 1st 301A thinning processing is removed at the same time insulating film 310 and the insulation film 303.

If the glass substrate as a base plate 1st 301A, the liquid containing hydrofluoric acid can be used to carry out chemical etching.

Figure 10B has shown the completed substrate 301A thinning processing state. After thinning processing, the 1st is reduced to the thickness of the base substrate 301B, in the 1st on the other surface of the substrate is formed of 320A is reduced to the depth of groove 320B.

Although in Figure 10B in, after the thinning of the base plate, the groove 320B having a rectangular shape of the cross section, it is not specifically limited to this shape. Thinning of the base plate of the processing before 320A of similar cross section, groove 320B cross-section can have the U-shaped shape or a wedge shape, or groove 320B can have the side surface of the tapered shape.

Thinning processing after the base plate 1st 301B is not greater than the thickness of the 100  m, preferably, is not greater than the 50  m, more preferably, not greater than 30 the  m. When the 1st substrate 301B is not greater than the thickness of the 100 when   m, 1st 301B base plate having flexible; therefore, the final flexible integrated circuit device can be obtained. Furthermore, because the base plate 1st 301B used as the protection film in order to maintain the durability of the integrated circuit device and to prevent impurity element, moisture and the like in the component into the integrated circuit, substrate 1st 301B not less than the thickness of the 1  m, preferably, not less than 2 the  m, more preferably, not less than 4 the  m.

In 1st substrate 301B formed on another surface of the groove are not limited to, the base plate can be increased as long as the 1st 301B another of the surface area of the surface of the can.

Although not shown, similar to embodiment 1, the groove 320B filled with a heat absorbing material or at least in the groove 320B formed on the surface of a thin film containing a heat sink material.

In this way, the part of the groove as a sunken 320B in 1st substrate 301B a is formed on the surface of the other, the groove 320B filled with a heat absorbing material or at least in the groove 320B formed on the surface of the a film containing a heat sink material, the base plate 1st 301B can have another surface of the surface area of the larger, and as the heat absorbing material can have a higher heat radiating property; therefore, the heat generated from the integrated circuit can be easily abreactions.

Furthermore, as shown in Figure 10C illustrated, the use of UV irradiation (ultraviolet) UV (ultraviolet) separation of the thin-film 317, in order to separate the adhered to the insulating thin film 315 UV (ultraviolet) of the separation of the thin-film 317. (Ultraviolet) through the UV irradiation, UV separation of the thin-film 317 in the adhesive layer 318 weaken the adhesion of the, can be separated by the separation of the thin-film UV 317.

If the use of the thermal separation of the thin-film to replace the UV separating film or use the 2nd thermal separation adhesive adhered to the insulating thin film substrate 315, the implementation is not heat treatment and UV (ultraviolet) radiation. Through the heat treatment, thermal separation of the thin-film in the adhesion of the adhesive layer of the adhesive or thermal separating weakened adhesion, can be separated from this thermal separation of the thin-film or 2nd base plate.

Through the above-mentioned steps, can obtain Figure 11 the integrated circuit device is shown.

Although Figure 8A to 11 show the thin-film transistor is formed on the base plate of the embodiment, the invention is not limited to this. As an integrated component of the circuit, such as can be provided in the Si substrate as the semiconductor substrate of the field effect transistor (FET) of the channel, or can be provided as a channel using an organic material of the organic thin-film transistor (TFT).

Furthermore, included in the semiconductor device of this invention of the thin film transistor of the structure is not limited to that described above. A thin film transistor can be with embodiment 2 of the structure described in.

Heat-absorbing material may be made by a kind of material, can be stacked two or more kind of material or can be formed in different places of the two or more kind of material.

This embodiment is shown of the structure and can be other embodiments and in conjunction with the embodiment.

[Embodiment 4]

This embodiment mode describes a method of manufacturing an integrated circuit device, the integrated circuit device with embodiment 2 and embodiment 3 the structure of the combination.

Through the embodiment 3 of the method described in the chart 9B shown in the state. When Figure 9B the state of the shown, the insulating film 315 is formed on the thin film transistor 305a of the source electrode or the drain electrode is electrically connected with the electrodes 416.

Furthermore, as shown in Figure 12B shown, the UV (ultraviolet) separation of the thin-film 417 is adhered to the insulating thin film 315 and the electrode 416. Separation of the thin-film UV 417 has such structure, wherein the substrate is made of a resin material film 419 to provide adhesive layer 418. Adhesive layer 418 is formed by resin material, its adhesion is irradiated by UV (ultraviolet) is weakened. Thin film is used as the material of the substrate, for example, can use the polyester, Peru Time (polyethylene terephthalate), PEN (polynaphthalic acid terephthalate) and the like.

Despite the separation of the thin-film UV here, however, instead of UV separation of the thin-film, can be used to separate the UV adhesive (a kind of adhesive, the adhesion by UV (ultraviolet) radiation weakening) adhesion 2nd base plate. Or, thermal separation of the thin-film can be used instead of UV separation of the thin-film, or can use the thermal separating adhesive (a kind of adhesive, the adhesion is weakened by heating) adhesion 2nd base plate. Thermal separation of the thin-film having this kind of structure, wherein, the substrate thin film is formed on the adhesive layer, the adhesive layer is formed by resin material, its adhesion is weakened by heating. If the use of heat separating film or thermal separation of adhesive adheres 2nd base plate, in the follow-up steps to implement treatment instead of UV irradiation.

Furthermore, as shown in Figure 12C shown, of the integrated circuit is formed over the base plate 1st 301A surface (hereafter referred to as 1st substrate 301A the other surface) is formed on part of the groove as a sunken 420A. Can be through etching or laser processing to form the groove 420A. Can also form a groove by mechanical grinding 420A. Moreover, only one surface of the concave and the convex portion is formed in advance of the plastic substrate can be used as base plate 1st 301A.

Although Figure 12C in, groove 420A having a rectangular shape of the cross section, it is not limited to this shape. Groove 420A cross-section can have the U-shaped shape or a wedge shape, or groove 420A can have the side surface of the tapered shape.

Furthermore, as shown in Figure 13A shown, in order to reduce base plate 1st 301A thickness, the use of grinding or polishing device 421 to the 1st substrate 301A processing on the other surface of (thinning processing). For example, the base plate through the grinding device grinding and 1st 301A, make its thickness is not greater than the 100  m, then, through the polishing device for polishing, make its thickness is not greater than the 20  m. When the 1st substrate 301A in this grinding of the surface of the further polishing a manner, the base plate 1st 301A the other surface can be smooth. Is described herein through the grinding device grinding and then through the polishing device polishing the implementation examples of thinning processing; however, the invention is not limited to this, the implementation may only use grinding device for grinding processing, or only by using a polishing device to carry out polishing processing.

Furthermore, although a grinding device or polishing device to carry out substrate 1st 301A thinning processing, this invention is not limited to this, through the use of chemical treatment can be carried out by etching the base plate 1st 301A thinning. If the glass substrate used as the base plate 1st 301A, the implementation of the chemical liquid medicine comprising hydrofluoric acid etching.

And, can be the combination of the grinding processing, polishing processing and etching treatment the implementation substrate 1st 301A thinning processing. For example, base plate 1st 301A thinning processing can be through the grinding treatment and polishing treatment performed after one or both of the chemical etching, or may be performed after the etching treatment by grinding treatment and polishing treatment to realize one or two.

As shown in Figure 13B illustrated, the implementation substrate 1st 301A thinning processing, until the opening 313 is formed in the electroconductive thin film 314 is exposed. If Figure 22A shown, opening 313 conductive material is also formed in 386, 1st base plate is performed 301A thinning processing, until the opening 313 provided in the electroconductive thin film 314 and a conductive material 386 one of them or both are exposed. At the same time, as shown in Figure if 22B shown, in the opening 313 forming a conductive material in 386, 1st base implementation 301A thinning processing, until the exposed conductive material 386 so far. Therefore, when the in the opening 313 conductive thin film 314 or conductive material 386 lower form the insulating film 310, an insulating thin film 303 is such as, in the plate 1st 301A thinning processing is removed at the same time insulating film 310 and the insulation film 303.

If the glass substrate as a base plate 1st 301A, the liquid containing hydrofluoric acid can be used to carry out chemical etching.

Figure 13B has shown the completed base plate 1st 301A thinning processing state. After thinning processing, 1st base plate is reduced as the thickness of the base plate 401B, in 1st on the other surface of the substrate is formed of 420A is reduced to the depth of groove 420B.

Although in Figure 13B in, after the thinning of the base plate, the groove 420B having a rectangular shape of the cross section, it is not specifically limited to this shape. Thinning of the base plate of the processing before 420A of similar cross section, groove 420B cross-section can have the U-shaped shape or a wedge shape, or groove 420B can have the side surface of the tapered shape.

Thinning processing after the base plate 1st 401B is not greater than the thickness of the 100  m, preferably, is not greater than the 50  m, more preferably, not greater than 30 the  m. When the 1st substrate 401B is not greater than the thickness of the 100 when   m, 1st base plate 401B having a flexible; therefore, the final flexible integrated circuit device can be obtained. Furthermore, because the base plate 1st 401B used as the protection film in order to maintain the durability of the integrated circuit device and to prevent impurity element, moisture and the like in the component into the integrated circuit, substrate 1st 401B not less than the thickness of the 1  m, preferably, not less than 2 the  m, more preferably, not less than 4 the  m.

In 1st substrate 401B formed on another surface of the groove are not limited to, the base plate can be increased as long as the 1st 401B another of the surface area of the surface of the can.

Although not shown, similar to embodiment 1, the groove 420B filled with a heat absorbing material or at least in the groove 420B formed on the surface of a thin film containing a heat sink material.

In this way, the part of the groove as a sunken 420B in 1st substrate 401B formed on the other surface, the groove 420B filled with a heat absorbing material or at least in the groove 420B formed on the surface of the a film containing a heat sink material, the base plate 1st 401B can have another surface of the surface area of the larger, and as the heat absorbing material can have a higher heat radiating property; in this way, the heat generated from the integrated circuit can be easily abreactions.

Furthermore, as shown in Figure 13C illustrated, the use of UV irradiation (ultraviolet light) UV (ultraviolet) separation of the thin-film 417 in order to separate the adhered to the insulating thin film 315 and electrode 416 UV (ultraviolet) of the separation of the thin-film 417. (Ultraviolet) through the UV irradiation, UV separation of the thin-film 417 adhesive layer in the 418 weaken the adhesion of the, can be separated by the separation of the thin-film UV 417.

If the use of the thermal separation of the thin-film, rather than UV separating film or use the 2nd thermal separation adhesive adhered to the insulating thin film substrate 315 and electrode 416, the implementation is not heat treatment and UV (ultraviolet) radiation. Through the heat treatment, thermal separation of the thin-film in the adhesion of the adhesive layer of the adhesive or thermal separating weakened adhesion, can be separated from this thermal separation of the thin-film or 2nd base plate.

Through the above-mentioned steps, can obtain Figure 14 the integrated circuit device is shown.

Although Figure 12A to 14 show on the base plate in the 1st example of forming a thin film transistor, the invention is not limited to this. As an integrated component of the circuit, such as can be provided in the Si substrate as the semiconductor substrate of the field effect transistor (FET) of the channel, or can be provided as a channel using an organic material of the organic thin-film transistor (TFT).

Furthermore, included in the semiconductor device of this invention of the thin film transistor of the structure is not limited to that described above. A thin film transistor can be with embodiment 2 of the structure described in.

Heat-absorbing material may be made by a kind of material, can be stacked two or more kind of material or can be formed in different places of the two or more kind of material.

This embodiment is shown of the structure and can be other embodiments and in conjunction with the embodiment.

[Embodiment 5]

The embodiment has described a situation, wherein the plurality of integrated circuit device are superposed, and at different integrated circuit formed on the substrate are electrically connected to each other.

Fig. 15 is the embodiment of a cross section of an integrated circuit device. The integrated circuit device 500, 501 and 502 are superposed, they are each including the integrated circuit formed on the substrate.

The integrated circuit device 500 through the implementation of the mode 2 describes the method for manufacturing the integrated circuit device. The integrated circuit device 500 in, in 1st base plate 503 is formed on a surface of the thin film transistor of the integrated circuit, the integrated circuit is not formed 1st base plate 503 surface (hereafter referred to as 1st base plate 503 and the other surface) of the groove is formed as a recessed portion. Although not illustrated, the embodiments 1 similar, the groove is filled with a heat absorbing material or at least in a groove formed on the surface of the film comprises a heat-absorbing material. Moreover, the integrated circuit device 500 in, in the integrated circuit of the integrated circuit is formed on a thin film transistor electrically connected with the electrodes 504.

Integrated circuit device 501 through the implementation of the mode 4 the the method for manufacturing the integrated circuit device. The integrated circuit device 501 in, in the 2nd base plate 507 is formed on one surface of the thin film integrated circuit of the transistor, is formed over substrate 2nd of the integrated circuit 507 surface (hereafter called 2nd base plate 507 the other surface) of the groove is formed as a recessed portion. Although not illustrated, the embodiments 1 similar, the groove is filled with a heat absorbing material or at least in a groove formed on the surface of the film comprises a heat-absorbing material. Moreover, the integrated circuit device 501 in, in the integrated circuit of the integrated circuit is formed on a thin film transistor electrically connected with the electrodes 509. Integrated circuit device 501 also includes 2nd base plate 507 on another surface of the electrode 508, the electrode can be the integrated circuit is electrically connected with the thin film transistor.

Integrated circuit device 502 through the implementation of the mode 3 the the method for manufacturing the integrated circuit device. The integrated circuit device 502 in, in 3rd base plate 512 is formed on one surface of the thin film transistor of the integrated circuit, the integrated circuit is not formed 3rd base plate 512 surface (hereafter called 3rd base plate 512 the other surface) of the groove is formed as a recessed portion. Although not illustrated, the embodiments 1 similar, the groove is filled with a heat absorbing material or at least in a groove formed on the surface of the film comprises a heat-absorbing material. Moreover, integrated circuit device 502 also includes in the 3rd base plate 512 on the other surface of the electrode 513, the electrode can be the integrated circuit is electrically connected with the thin film transistor.

With the structure of the integrated circuit device 500,501,502 stack. At this moment, to provide integrated circuit device 500,501,502, so that the integrated circuit device 500 electrode 504 in the face of the integrated circuit device 501 electrode 508, and integrated circuit device 501 electrode 509 in the face of the integrated circuit device 502 electrode 513.

Furthermore, using the anisotropic conductive adhesive 505 the integrated circuit device 500 is attached to the integrated circuit device 501, and using the anisotropic conductive adhesive 505 the integrated circuit device 501 is attached to the integrated circuit device 502. The anisotropic conductive adhesive 505 that includes conductive particles 506 of the adhesive. In this way, when using the anisotropic conductive adhesive 505, the integrated circuit device 500 and integrated circuit device 501, and integrated circuit device 501 and integrated circuit device 502 when attached to each other, the integrated circuit device 500 electrode 504 through the conductive particle 506 and integrated circuit device 501 electrode 508 is electrically connected with, and integrated circuit device 501 electrode 509 through the conductive particle 506 and integrated circuit device 502 electrode 513 is electrically connected.

In other words, the integrated circuit device 500 integrated circuit provided in the integrated circuit device 501 provided in the integrated circuit is electrically connected with, and integrated circuit device 501 provided in the integrated circuit device of the integrated circuit 502 provided in the integrated circuit is electrically connected.

As the anisotropic conductive adhesive 505, for example, can provide an anisotropic conductive paste (ACP), and the like. Furthermore, integrated circuit device 500,501 and 502 is not necessary of attached of using the anisotropic conductive adhesive 505 implementation. The attachment can be carried out in other way, as long as the electrode 504 and the electrode 508, and electrode 509 and the electrode 513 can be electrically connected with each other, and integrated circuit device 500,501,502 can be attached to each other. Therefore, for example can be used (silver   paste), such as a silver paste, copper paste (copper   paste), (carbon   paste) and carbon paste therein such a conductive adhesive; such as anisotropic conductive film (ACF) such a conductive thin-film; non-conductive glue (  paste non-conductive, NCP); performing the welding and the like is attached.

Note, preferably, using having high heat radiation property, that is, the material with high thermal conductivity, such as the use of the anisotropic conductive adhesive 505, the implementation of integrated circuit 500,501 and 502 of an attachment.

In this way, when a plurality of integrated circuit device in a multi-layer structure are provided, even if a plurality of the integrated circuit are electrically connected to each other, also can get the highly integrated and miniaturized. On the other hand, exists in each integrated circuit device of the integrated circuit generates the problem is not apt to accumulate the heat. However, in each of the integrated circuit device of the concave portion is formed on the base plate, and a concave portion is filled with a heat absorbing material or at least in the sunken part formed on the surface of a thin film containing a heat sink material. Therefore, each of the integrated circuit device increases the surface of the base plate, and because the heat-absorbing material, its heat radiation property is increased; in this way, the heat generated from the integrated circuit can be easily abreactions. Therefore, the integrated circuit generates can solve the problems caused by accumulation of heat.

Figure 15 in, is formed on the entire surface by the anisotropic conductive adhesive of the integrated circuit device 500,501 and 502 are attached to each other. However, different only in the position of the base plate is electrically connected with each other to form an anisotropic conductive adhesive. Figure 26 shown in the example of this kind of adhesion.

Figure 26 in, the integrated circuit device 500 electrode 504 and integrated circuit device 501 electrode 508 the position of the is electrically connected with, and integrated circuit device 501 electrode 509 and integrated circuit device 502 electrode 513 the position of the is electrically connected, to form an anisotropic conductive adhesive 505. The anisotropic conductive adhesive is not in the integrated circuit device 501 substrate 507 on the sunken part of the integrated circuit device and 502 of the substrate 512 is formed on the recessed portion. Therefore, in these position, the integrated circuit device 500 and 501 and between integrated circuit device 501 and 502 interval is formed between the. In this way, including the base plate 507 and 512 in the portion of the sunken part of the, respectively in the integrated circuit device 500 and 501 and between integrated circuit device 501 and 502 form interval between 530 and 531. In this way, the heat quantity can be through these spacing 530 and 531 dissipated from the integrated circuit device. Note, preferably force the gas flow through the spacer 530 and 531, because the heat radiation properties can be further improved.

And, as shown in Figure 27, can be integrated circuit device by attaching 500,501 and 502 so that they do not form part of the integrated circuit suspension (overhang) each other, forming a heat radiation portion 520,521 and 522.

A heat radiation portion 520,521 and 522 to include in each of the integrated circuit device of the integrated circuit generates heat from the heat-dissipating part of 520,521 and 522 abreactions. Therefore, and Figure 26 compared with the structure of in, heat can be more effectively dissipated around the integrated circuit device. Furthermore, also in the heat-dissipating part 520,521 and 522 of the substrate in 503,507 and 512 forms a sunken part on; therefore, the heat-dissipating part and 520,521 and 522 in compared with the case of forming a recessed portion, the heat dissipation portion has a greater surface area, thus having higher heat radiating property.

Similar to Figure 27, if four or more of the stacked integrated circuit device, the integrated circuit device by attaching the suspension to each other, in each of the stacked integrated circuit device formed at the end part of the heat radiating portion.

And, when the base plate 503,507 and 512 implementation of thinning processing each base plate has, for example, not greater than 100 the the thickness of the   m, a heat radiation portion 520,521 and 522 radiating property than does not carry out processing of thinning the substrate is high.

As shown in Figure 27, is not needed in every integrated circuit device are provided in the heat radiating portion. For example, in Figure 27 in, heat-dissipating part is formed only 521 and not provide a radiating part 520 and 522. When the integrated circuit device are stacked, located in the stacked integrated circuit device of the integrated circuit device of the integrated circuit in the most difficult to dissipate the heat generated by the. That is to say, in Figure 27 in, located in the integrated circuit device 500 and 502, and an integrated circuit device 501 integrated circuit included in the most difficult to dissipate the heat generated by the. Therefore, integrated circuit device 501 of the heat-dissipating part in 521 allow integrated circuit device 501 integrated circuit included in the effective to dissipate the heat generated by the. In order to further increase the integrated circuit device 501 radiating attribute, as shown in Figure 28, the integrated circuit can be additional 501 provided in the heat radiating portion 523.

Note if stacking three or more of the integrated circuit device, includes the heat-dissipating part of the base plate and does not include heat radiating part of the base plate can be attached to each other are alternately stacked. In other words, base plate can be stacked in such a manner: does not include the heat radiation portion including a heat radiation portion of the base plate is provided on the base plate, and the other is formed on the base plate includes a heat-dissipating part. At this moment, the base plate can include heat-dissipating part having only as shown in Figure 27 the integrated circuit device 501 of the heat-dissipating part 521, as shown in Figure 28 or has integrated circuit device 501 of the heat-dissipating part in 521 and 523.

Figure 27 in, can form a heat-dissipating part 521 and 522 but does not provide a radiating part 520. Because integrated circuit 500 is located in stacked integrated circuit device of the most external, and the base plate 503 forms a sunken part on, substrate 503 with the surface of high heat radiation property. Therefore, the integrated circuit device 500 of the heat generated by the integrated circuit from the substrate 503 forms a sunken part of the surface effectively dissipated. In this way, the integrated circuit device 501 and 502 is formed in the heat radiating portion 521 and 522, in order to increase the integrated circuit device 501 and 502 radiating attribute.

Although in the description of the above three integrated circuit device in a multi-layer structure are stacked, a stacked integrated circuit device is not limited to the number of three, can be stacked two or more of the integrated circuit device. Figure 26 to 28 is shown in each of the structure can be appropriately applied to two or more of the stacked integrated circuit device.

In this embodiment, through the embodiments 2 to 4 described in the method for manufacturing the integrated circuit in a multi-layer stacked structure. However, each of the stacked integrated circuit structure of the device and the manufacturing method thereof is not limited to embodiments 2 to 4 those in the description. Any structure can be adopted, as in the adjacent integrated circuit device of the integrated circuit can be electrically connected to each other.

Because this embodiment integrated circuit device in a multi-layered structure stacking, included in each integrated circuit device of the integrated circuit generates in the susceptible to accumulation of heat. When the groove (a concave portion) is filled with a heat absorbing material or at least in a groove (a concave portion) formed on the surface of the a film containing a heat sink material, the heat dissipated to the surrounding of the integrated circuit. Therefore, when, as in this embodiment of the integrated circuit is stacked in a multi-layer structure, the present invention is extremely effective.

Without heat-absorbing material is formed from a material, can be stacked two or more kind of material, or may be formed in different places of the two or more kind of material.

The structure of the heat-dissipating part (for example, 27 and 28 in the structure of the shown) under the condition, if by providing heat radiating part to obtain sufficient heat dissipation properties, the groove (concave portion) does not need to be filled with heat absorbing material, and does not need to be in at least a groove (a concave portion) formed on the surface of a thin film containing a heat sink material.

Preferably, each of the stacked integrated circuit device for thinning processing is carried out to the substrate. As the thinning processing is reduced, the thickness of the base, of the base plate and not to carry out compared with the case of thinning processing, device can be miniaturized. In particular, when the integrated circuit device are stacked, reduce each stacked integrated circuit device of a thickness of the substrate is important, because the whole of the thickness of the device subject to each of the stacked integrated circuit device significantly influenced, the thickness of the base. Each of the stacked integrated circuit device is not greater than the thickness of the base of the 100  m, preferably no more than 50 the  m, more preferably not greater than 30 the  m. Furthermore, because each of the stacked integrated circuit device is used as the protective film on the substrate of the integrated circuit in order to maintain the durability of the device and prevent the impurity element, moisture and the like into the integrated component of the circuit, is not less than the thickness of the base plate 1 the  m, preferably not less than 2 the  m, more preferably not less than 4 the  m.

This embodiment is shown of the structure and can be other embodiments and in conjunction with the embodiment.

[Embodiment 1]

This embodiment has described a kind of situation, the integrated circuit device of this invention applied to a semiconductor device such as IC.

In Figure 16A in the semiconductor device shown in the, has a front face mode of execution of any of the integrated circuit device structure 603 is attached to include conductive film 604 of the substrate 601 on. In this embodiment, the substrate 601 to form a plurality of on the conductive thin-film 604 electrically connected with the integrated circuit device 603a to 603d. Can use the anisotropic conductive adhesive 612 the integrated circuit device 603a to 603d adhesion to the substrate 601, including the integrated circuit device 603a to 603d in the integrated circuit can be contained in the anisotropic adhesive 612 of conductive particles in the 611 and conductive film 604 is electrically connected. As the anisotropic conductive adhesive 612, for example, can provide an anisotropic conductive paste (ACP), and the like. Or can be used such as the silver paste, copper paste, and carbon paste therein such a conductive adhesive; such as anisotropic conductive film (ACF) such a conductive thin-film; non-conductive glue (NCP); the integrated circuit device, such as welded 603a to 603d and the conductive thin film 604 is electrically connected.

Each integrated circuit device 603a to 603d used as one or more central processor (CPU), memory, network processing circuit, disk processing circuit, the Image processing circuit, the voice processing circuit, power supply circuit, temperature sensor, humidity sensor, infrared sensor and the like.

As shown in Figure 16C shown, a plurality of integrated circuit device 603 can be stacked in a multilayer structure. When a plurality of integrated circuit device is stacked in a multi-layer structure like this, even if the plurality of integrated circuit are electrically connected to each other, still obtain a highly integrated and miniaturized. Furthermore, in each of the integrated circuit device of the concave portion is formed on the base plate, and a concave portion is filled with a heat absorbing material or at least in the sunken part formed on the surface of a thin film containing a heat sink material. Therefore, the heat generated from the integrated circuit can be easily abreactions.

[Embodiment 2]

The embodiments describe a situation, wherein the integrated circuit device of the present invention apply to the display device of peripheral driver circuit.

The reference Figure 18A and 18B described in the pixel portion display device comprising a light emitting element. Figure 18A shown the display device is an example of a top, the picture 18B along the map is 18A line a-b and line c-d of the section of the Figure.

Figure 18A shown display device comprises a on the substrate 801 is formed on the scanning line driving circuit 802, the signal line driving circuit 803, the pixel portion 804, and the like. Providing an opposed substrate 806, the face is formed on the same pixel portion 803 of the base plate 801 surface. The scanning line driving circuit 802 and the signal line driving circuit 803 includes a base plate 801 integrated circuit device, the integrated circuit device described in the above-mentioned embodiment with any of the structure. The use of seal 805 of the base plate 801 and the opposite substrate 806 is attached.

The scanning line driving circuit 802 and the signal line driving circuit 803 from the external input terminal FPC (flexible printed circuit) 807 receives the video signal, a clock signal, a start signal, a reset signal, and the like. Although only the FPC is shown in the Figure, but a printed circuit board can be connected with the FPC. Furthermore, the signal line driving circuit 803 or scanning line driving circuit 802, such as the above-mentioned embodiment can be adopted in the stack the integrated circuit device of the invention the structure of the device. When the thin film transistor are stacked, can reduce the signal line driving circuit 803 or scanning line driving circuit 802 the occupied area, so that the pixel portion 804 for increasing the area.

Figure 18B shown in Figure along the 18A line a-b and line c-d of the profiles, the showing of the signal line driving circuit 803 and the pixel portion 804, they are each included in the base plate 801 of the thin-film transistor is formed on. As the signal line driving circuit 803 a part of the, through the combined N-channel thin-film transistor 810a and P-channel thin-film transistor 810b to form a CMOS circuit. Moreover, in the thin-film transistor 810a and 810b having a thin film transistor provided on 810c integrated circuit device 819. The integrated circuit device and 819 of the thin-film transistor in 810c electrically connected with the electrodes 821 and with the thin-film transistor 810b electrically connected with the electrodes 820 through the contained in the anisotropic conductive adhesive 822 of conductive particles in 823 are electrically connected to each other. In other words, comprises a thin film transistor 810a and thin film transistor 810b of the thin film transistor CMOS circuit 810c through the electrode 820 and conductive particles 821 and 823 are electrically connected to each other.

As the anisotropic conductive adhesive 822, for example, can provide an anisotropic conductive paste (ACP), and the like. Or, not only can use the anisotropic conductive adhesive 822, but also can be used such as the silver paste, copper paste, a conductive carbon paste therein and adhesive; such as an anisotropic conductive film of the conductive film (ACF); non-conductive glue (NCP); such as welded, to make the electrode 820 and electrode 821 are electrically connected to each other.

Figure 18B only shown the signal line driving circuit 803 of the profiles. However, similar to the signal line driving circuit 803, the scanning line driving circuit 802 can also be made by including in the base plate 801 and the integrated circuit is formed on the integrated circuit device of the invention the structure of the device.

Can be composed of known CMOS circuit, PMOS circuit or NMOS circuit, instead of the thin-film transistor, such as a scanning line driving circuit 802 and the signal line driving circuit 803 of such a drive circuit. Furthermore, this embodiment illustrate a situation, such as the scanning line driving circuit 802 and the signal line driving circuit 803 of each driving circuit is included in the base plate 801 and the circuit formed on the integrated circuit device of the present invention. However, the invention is not limited to this kind of situation. Such as the scanning line driving circuit 802 and the signal line driving circuit 803 can include only the driving circuit of the integrated circuit device of the present invention.

Pixel portion 804 includes a plurality of pixels, each pixel has a light-emitting element 816 and is used for driving the light-emitting element 816 of the thin film transistor 811. Providing the electrode 812 is electrically connected with the luminous source 816 the 1st electrode 813, the electrode 812 and thin film transistor 811 is connected with the source region or the drain region, and form cover 1st electrode 813 of the end of the thin insulating film 809. Insulating film 809 as the dividing wall between the pixels.

Insulating film 809 by a positive photosensitive acrylic resin film is formed. Insulating film 809 is formed in its upper part or on the lower end portion has a curved surface in order to improve the coverage rate. For example, if the positive photosensitive acrylic resin is used as the insulating film 809 material, the insulating film 809 is formed preferably, only on its upper part with a radius of curvature (0.2-3 the  m) of the curved surface. The insulating film 809 can be made of a negative photosensitive resin (its post-exposure is not soluble in etchant) or positive photosensitive resin (its after exposed become soluble in etchant) form. Alternatively, insulating film 809 may be formed as of the material with the single-layer structure or a laminated structure: an organic material, such as epoxy resin, polyimide, polyamide, polyvinyl phenol and benzo ring butene; or a silicone material, for example silicone resin. As described in the above-mentioned embodiment, the insulating film 809 is subjected to a plasma treatment in order to oxidize or nitride insulating film 809, can be improved insulating film 809 surface, so as to obtain dense film. Through the improved insulating film 809 surface, can improve the insulating film 809 strength, which may reduce such as the formation of the openings an isochronous crevices of such physical damage and reduce the thin film during etching. Furthermore, insulating film 809 the surface of the lead to the improvement of the surface property (for example with insulating film 809 to provide a luminescent layer 814 adhesiveness) improvement.

As shown in Figure 18A and 18B in the semiconductor device shown in the, in the light-emitting component 816 the 1st electrode 813 is formed on the luminescent layer 814, and the light emitting element layer 814 forming the light-emitting element on 816 the 2nd electrode 815. By stacking 1st electrode 813, the luminescent layer 814 and 2nd electrode 815 forming the light-emitting element 816.

The light-emitting component 816 the 1st electrode 813 and 2nd electrode 815 is used as one of the anode, the other is used as a cathode.

The anode is preferably made of a material having a high work function. For example, such as indium tin oxide (ITO) anode can be formed by thin-film, indium-tin oxide film containing silicon, indium oxide-zinc alloy (a mixture of 2-20atomic % of zinc oxide (ZnO) indium oxide) transparent conductive film made of, zinc oxide (ZnO) thin film, titanium nitride film, chromium film, desired, and zinc film to form a single layer film of this; can also be composed of titanium nitride thin film and the thin film mainly includes aluminum laminated film, titanium nitride film, the thin film mainly includes aluminum and titanium nitride film is formed to a three-layer film or the like. When using the laminated structure, and the electrode can have low as the resistance of the lead wire, and to form a good ohmic contact. Moreover, the electrode can also be used as an anode. The use of mixing zinc oxide (ZnO) and indium oxide target, is formed by sputtering indium oxide zinc alloy.

The cathode is preferably comprised of a material having a low work function (Al, Ag, Li, Ca or their alloy, such as MgAg, MgIn, AlLi, CaF₂ or electrolytic) is made. When the transparent electrode is used as the cathode, preferably using the metal thin film and the transparent conductive film (ITO, comprising silicon ITO, the indium oxide is mixed 2 to 20atomic % of zinc oxide (ZnO) indium oxide-oxidize the zinc to make the transparent conductive thin film, such as zinc oxide (ZnO)) laminated film.

In this embodiment, the light-emitting component 816 the 1st electrode 813 is made of ITO by the light, it will be acted as anode, the substrate 801 a side extraction of light. Through the use of light-transmitting material is used as a light-emitting element 816 the 2nd electrode 815, can be from the opposite base plate 806 a side extraction of light. Alternatively, the light emitting element is formed of a light permeable material 816 the 1st electrode 813 and 2nd electrode 815, can be from the base plate 801 and an opposed base plate 806 two side extraction of light.

Can be a known method, such as the use of the evaporation mask evaporation, spin coating and ink-jet printing, to form a luminescent layer 814, so that it has low molecular material, molecular material (include oligomers and dendritic polymer (dendrimer)) or high molecular material (also referred to as polymer) the single-layer structure or a laminated structure.

In this embodiment, using seal member 805 the opposed substrate 806 is attached to the base plate 801, therefore in the base plate 801, an opposed substrate 806 and a sealing member 805 around space 808 offer the light-emitting component in 816. That space 808 can be filled with inert gas (such as nitrogen or argon) or seal 805.

Note preferably seal 805 is made of the resin. Hope that the material to allow as little as possible into the moisture and sucking. An opposed substrate 806 can be a glass substrate, a quartz substrate or by FRP (glass fiber reinforced plastics), PVF (polyvinyl fluoride), (Myler) mai Lamo , polyester, acrylic resin such as a plastic substrate made of.

Display device is not limited to in a pixel portion comprising a light emitting element in the above-mentioned structure, the pixel portion can be included in the structure of the liquid crystal.

Although in Figure 18A and 18B in, in the base plate 801, an opposed substrate 806, seal 805 surrounding space 808 such as formed in the scanning line driving circuit and the signal line driving circuit of the driving circuit, however, it could be in the substrate 801, an opposed substrate 806, seal 805 surrounding space 808 is in the shape of a driving circuit.

In Figure 18A and 18B in, such as the scanning line driving circuit and the signal line driving circuit in the driver circuit of the pixel portion is formed on the same substrate. However, the invention is not limited to this kind of structure, the integrated circuit device of the present invention can be attached to the base plate.

The reference Figure 17A and 17B have described this kind of situation the embodiment of the display device. Figure 17B along the map is 17A A-B cross section of the line.

Comprises a thin film integrated circuit of the transistor device 731a are attached to the substrate 701 is, and comprises a thin film integrated circuit of the transistor device 731b is attached to film is used for connecting the FPC 707. Conductive particles using a 711 of the anisotropic conductive adhesive 712, the implementation of the base plate 701 and integrated circuit 731a of an attachment and FPC   707 and integrated circuit device 731b of an attachment. When using the anisotropic conductive adhesive 712 the integrated circuit 731a attached to the base plate 701 time, integrated circuit device 731 through the base plate 701 on the conductive thin-film 732, and conductive particles 711 and the pixel portion 704 are connected. Moreover, when using the anisotropic conductive adhesive 712 the integrated circuit 731b attached to the FPC   707 time, integrated circuit device 731b through the base plate 701 a plurality of conductive film 733, FPC   707 of the conductive thin film on the conductive particles 734 and 711 and integrated circuit device 731a are connected. As the anisotropic conductive adhesive 712, for example, ACP and the like can be given. Alternatively, as described above can be used such as the silver paste, copper paste, a conductive carbon paste therein and adhesive; such as ACF such a conductive thin-film; NCP ; and welded. The use of seal 705 the substrate 701 is attached to the base plate 706.

Furthermore, with reference to the application of the above-mentioned display device.

The above-mentioned display apparatus can be applied to various electronic equipment, for example, such as video camera of the video camera and a digital still camera, goggles display (head mount display), navigation system, a sound reproducing device (car audio equipment, combined sound, and the like), computer, game machine, a portable information terminal (mobile computer, mobile telephone, portable game machine, electronic book, etc.), equipped with a recording medium and the Image reproducing device (more specifically, reproduction such as DVD (digital versatile disc) such a recording medium and has a display reproduction Image display device). The specific examples described below.

Figure 23A has shown the television receiver, which includes a casing 2001, a supporting base 2002, a display part 2003, a speaker part 2004, a video input terminal 2005, and the like. The display part can be through 2003 the application of the embodiment of the display device manufacturing the television receiver.

Figure 23B shown the digital camera, which comprises a main body 2101, a display part 2102, an Image receiving portion 2103, operation keys 2104, an external connection port 2105, a shutter 2106, and the like. Can be through the display part 2102 the application of the embodiment of the display device manufacturing the digital camera.

Figure 23C shown the computer, it comprises a main body 2201, a casing 2202, a display part 2203, a keyboard 2204, an external connection port 2205, clicking the mouse 2206, and the like. Can be through the display part 2203 the application of the embodiment of the display device manufacturing the computer.

Figure 23D shown a mobile computer, which comprises a main body 2301, a display part 2302, a switch 2303, operation keys 2304, an infrared port 2305, and the like. Can be through the display part 2302 the application of the embodiment of the display device manufacturing the mobile computer.

Figure 23E equipped with a recording medium shows a portable Image reproducing device (such as a DVD reproduction apparatus), which includes a main body 2401, a casing 2402, a display part A   2403, a display part B   2404, a recording medium reading section (for example DVD) 2405, operation keys 2406, a speaker portion 2407, and the like. Display part A   2403 mainly displays the Image information and the display part B 2404 mainly displays the text information. A the display portion a   2403 and a display part B 2404 the application of the embodiment of the display device manufacturing the Image reproducing device. Equipped with a recording medium to the attention of the Image reproducing device comprises a game machine, and the like.

Figure 23F the camera is shown, it comprises a main body 2601, a display part 2602, casing 2603, an external connection port 2604, remote control receiving portion 2605, an Image receiving portion 2606, battery 2607, voice input portion 2608, operation keys 2609, eyepiece 2610, and the like. Can be the display portion 2602 the application of the embodiment of the display device manufacturing the television camera.

Figure 23G of the mobile phone is shown, it comprises a main body 2701, shell 2702, a display portion 2703, the voice input portion 2704, a voice output portion 2705, operation keys 2706, an external connection port 2707, an antenna 2708, and the like. Can be through the display part 2703 the application of the embodiment of the display device manufacturing the mobile telephone.

Furthermore, formed on the same by reducing the thickness of the base of the integrated circuit, the integrated circuit device of the invention device may be provided with flexible. Described below with reference with flexible in the pixel portion as particular examples of the display device.

Figure 24A shown a kind of display unit, comprises a main body 4101, a supporting base 4102, the display portion 4103, and the like. Display portion 4103 is formed using a flexible substrate in order to obtain light weight and thin display. Display portion 4103 can be bent and from the support base 4102 separation, in order to display along the curved wall mounting. In this way, the flexible display can be provided on the curved surface can also be provided on the plane; therefore, it can be used for various application. Because the formed on the same substrate of the integrated circuit implementation of thinning processing, when the processing of reducing the thickness of the base film is reduced to not greater than the 100 when   m, integrated circuit device of the present invention can be flexible. Therefore, when the flexible integrated circuit device is used for driving the display portion 4103 of the peripheral driving circuit and the like, flexible display can be manufactured.

Figure 24B cincinal display can be shown, it comprises a main body 4201, display portion 4202 and the like. Body 4201 and a display part 4202 is formed using a flexible substrate, bending or curling state in order to carry the display. Therefore, even if the display has a large size, the display may be in a curved or crimped state is in the bag. Because the formed on the same substrate of the integrated circuit implementation of thinning processing, when the processing of reducing the thickness of the base film is reduced to not greater than the 100 when   m, integrated circuit device of the present invention can be flexible. Therefore, when the flexible integrated circuit device is used for driving the display portion 4202 when the peripheral driver circuit, can be manufacturing a light, thin and large-sized display.

Figure 24C disclosed is a sheet computer, comprising a main body 4401, display portion 4402, keyboard 4403, the touchpad 4404, an external connection port 4405, power supply plug 4406, and the like. The use of the flexible substrate to form a display portion 4402 in order to obtain light weight and thin computer. Furthermore, if the body 4401 with the part of the storage space, the display portion 4402 can be crimped and in main body. In addition when the keyboard 4403 with flexible is also, similar to the display portion 4402, keyboard 4403 can be crimped and in body 4401 in the storage space, this is convenient to carry. When it is not used, the computer can be crimped and storage, space is not occupied. Because the formed on the same substrate of the integrated circuit implementation of thinning processing, when the processing of reducing the thickness of the base film is reduced to not greater than the 100 when   m, integrated circuit device of the present invention can be flexible. Therefore, when the flexible integrated circuit device is used for driving the display section 4402 of the peripheral driver circuit, and the like, can be made light and thin computer.

Figure 24D shown a 20 to 80-inch large display part of the display device, which comprises a main body 4300, as an operation part of the keyboard 4302, display portion 4301, speaker 4303, and the like. The use of the flexible substrate to form a display portion 4301, and can be with the keyboard 4302 separation of the bending or curling state to the part carrying main body 4300. Furthermore, may not use the routing keyboard 4302 and a display part 4301 is connected between. For example, the main body part 4300 can be along the curved wall mounting and can use the keyboard 4302 operation without the use of wiring. Because the formed on the same substrate of the integrated circuit implementation of thinning processing, when the processing of reducing the thickness of the base film is reduced to not greater than the 100 when   m, integrated circuit device of the present invention can be flexible. Therefore, when the flexible integrated circuit device is used for driving the display section 4301 of the peripheral driver circuit, and the like, can produce light, thin and large-sized display device.

Figure 24E the electronic book is shown, it comprises a main body 4501, a display part 4502, operation keys 4503, and the like. Body 4501 can be combined in the modem. The use of the flexible substrate to form a curved or cincinal display part 4502. So can carry the electronic book but does not take up space. And, a display part 4502 and the moving Image can be displayed, such as the character of such a static Image. Because the formed on the same substrate of the integrated circuit implementation of thinning processing, when the processing of reducing the thickness of the base film is reduced to not greater than the 100 when   m, integrated circuit device of this invention with flexible. Therefore, when the flexible integrated circuit device is used for driving the display part 4502 of the peripheral driver circuit, and the like, can be made light and thin electronic book.

Figure 24F IC card a is shown, it comprises a main body 4601, display portion 4602, connecting end 4603, and the like. Because of using the flexible substrate to form light and the display part of the slice 4602, it can be adhered to the surface of the card. When the IC card can be in the non-contact manner while receiving the data, the data obtained from the outside may be displayed on a display portion 4602 on. Because the formed on the same substrate of the integrated circuit implementation of thinning processing, when the processing of reducing the thickness of the base film is reduced to not greater than the 100 when   m, integrated circuit device of the present invention can be flexible. Therefore, when the flexible integrated circuit device is used for driving the display portion 4602 of the peripheral driver circuit, and the like, can be made light and thin IC card.

As mentioned above, the application range of the invention is so widely, the present invention can be applied to a plurality of fields of electronic device and information display device. The attention of the above-mentioned examples can be with the embodiment of the methods of implementation and freely combined.

[Embodiment 3]

The embodiment describes integrated circuit device of the present invention is applied to the IC card.

Figure 19A shown the integrated circuit device of the present invention IC of the top of the card. The integrated circuit device of the invention device 923 are attached to the base plate 921. Specifically, included in the integrated circuit device 923 such as a thin film transistor in the element and is used as the antenna conductive thin film 922 is electrically connected with, the conductive thin film on the substrate 921 to provide.

Figure 19C has shown the portion 924 of the profiles, wherein the integrated circuit device 923 and used as the antenna conductive thin film 922 is electrically connected. Integrated circuit device 923 in, on the base plate 930 is formed on one surface of a thin-film transistor of the integrated circuit 935, the substrate forming the integrated circuit 930 surface (hereafter referred to as base plate 930 another surface of) used as the recessed portion is formed on the groove. The thin-film transistor 935 electrically connected with the electrodes 986 through the contained in the anisotropic conductive adhesive 901 of conductive particles in 911 and used as the antenna conductive thin film 922 is electrically connected. As the anisotropic conductive adhesive 901, for example, can provide an anisotropic conductive paste (ACP), and the like. Alternatively, not only can use the anisotropic conductive adhesive 901, also can be used such as the silver paste, copper paste, a conductive carbon paste therein and adhesive; such as an anisotropic conductive film of the conductive film (ACF); non-conductive glue (NCP); the welded electrode 986 and is used as the antenna conductive thin film 922 are electrically connected to each other.

Provided in the integrated circuit device of a transistor is not limited to map 19C of the thin film transistor is shown, such as the Si substrate can be such as a transistor formed on a semiconductor substrate, the semiconductor substrate used as a channel region. Figure 19D shown the cross section of this situation. Integrated circuit device 923 in, such as the Si substrate such a semiconductor substrate 931 formed on one surface of a transistor 936, it uses semiconductor substrate 931 as a channel region, and the semiconductor substrate 931 a surface of the other (not forming a transistor 936 semiconductor substrate 931 surface) is formed as a recessed portion on the groove. With transistor 936 electrically connected with the electrodes 996 through the contained in the anisotropic conductive adhesive 901 of conductive particles in 911 and used as the antenna conductive thin film 922 is electrically connected. This case, similar to the chart 19C, can use different from the anisotropic conductive adhesive 901 of the electrode means other 996 and is used as the antenna conductive thin film 922 are electrically connected to each other.

Because the formed on the same substrate of the integrated circuit implementation of thinning processing, when the processing of reducing the thickness of the base film is reduced to not greater than the 100 when   m, integrated circuit device of the present invention can be flexible. Therefore, when the such as a plastic substrate is used as the substrate of the flexible substrate 921 and the flexible substrate 921 of the invention are provided on the flexible integrated circuit device, IC card also can be bent, so that the IC (Figure 19B) the added value of the card.

[Embodiment 4]

This embodiment has described a kind of situation, the integrated circuit device of the present invention in the non-contact manner to be applied in for transmitting and receiving data of the semiconductor device (also referred to as RFID (radio frequency identification) tag, ID tag, IC label, IC chip, RF (radio frequency) tag, the wireless tag, the electronic tag or wireless chip).

In the embodiment 2 in the manufacturing method described in, reference Figure 4A to 5A, similar to embodiment 2 of the integrated circuit device is manufactured. Furthermore, in fig. 5B in, is not formed the electrode 216, but the insulating film 215 is formed on the conductive film serving as an antenna 229, the thin-film transistor 205a to 205c at least one electrical connection. Furthermore, a cover is used as the antenna conductive thin film 229 is used as the protective film of the insulating film 230, and the base plate 1st 201A implementation of thinning processing (in other words, embodiment 2 is described in the same manufacturing method is used for a picture 5C in the Figure and beyond). Therefore, as shown in Figure can be manufactured 20A can be shown in a non-contact manner of transmitting and receiving data integrated circuit device. Note when the 1st substrate thinning processing after 201B reduced to not greater than the thickness of the can 100 when   m, the integrated circuit device may be provided with flexible. Therefore, can be can be made in the non-contact manner of transmitting and receiving data flexible integrated circuit device.

Using the conductive material, by CVD, sputtering, printing method (for example, screen printing, gravure printing), the droplet release, the dispenser method, the conductive thin film serving as an antenna 229. Conductive material is selected from aluminum (Al), titanium (Ti), silver (Ag), copper (cubic), gold (Au), nickel (Ni) and the element, or mainly comprising these elements of the alloy material or a compound material, and can be made of single-layer structure or a laminated structure.

By CVD, sputtering, etc. form the insulating film 230, with the thin film under the single-layer structure or a laminated structure of the: bag oxygen-containing or nitrogen, an insulating film, for example silicon oxide film, silicon nitride film, silicon oxynitride (SiO_x N_y) (x>y> 0) thin film and the silicon oxynitride (SiN_x O_y) (x>y> 0) film; or such as DLC (present) of the thin film containing carbon. Can also be by spin-coating, screen printing, droplet release form the insulating film 230, a film made of the organic material of the single-layer or laminated structure, the organic material such as epoxy resin, polyimide, polyamide, polyethylene agent phenol, benzocyclobutene, and an acrylic resin, or silicone material such as silicone resin.

Alternatively, the conductive film serving as an antenna 229 can be formed separately with the integrated circuit, then the integrated circuit is electrically connected. For example, in the embodiment 2 is described in the method of manufacturing, by similar to embodiment 2 of the map 4A to 5A manufacturing integrated circuit device. Furthermore, in fig. 5B in, is not formed with the thin-film transistor of the integrated circuit 205c electrically connected with the electrodes 216, and is formed on the thin film transistor 205a electrically connected with the electrodes 243. Furthermore, in the base plate 240 as an antenna is formed on the conductive thin-film 239 and the base plate 1st 201A is formed on the thin film transistor of the integrated circuit is attached, so that they are electrically connected to each other. Furthermore, the base plate 1st 201A groove is formed, and the base plate 1st 201A reduce the thin-processing, as shown by this manufacturing the 20B can be shown in the non-contact manner of transmitting and receiving data of the integrated circuit device. Note when the 1st substrate thinning processing after 201B reduced to not greater than the thickness of the can 100 when   m, the integrated circuit device may be provided with flexible. In this way, can be can be made in the non-contact manner of transmitting and receiving data flexible integrated circuit device.

Substrate 240 can be made of flexible material, such as plastic, or 1st substrate 201A and base plate 240 can be attached to each other and subjected to thinning processing. The latter case, the base plate 240 can be composed of the 1st substrate 201A is made of similar material. Can use the anisotropic conductive adhesive 242, will include is used as the antenna conductive thin film 229 base plate 240 layer 235a and including such as the base plate 1st 201B of the transistor formed on the layer of the integrated circuit 235b bonded to each other. Can be contained in the anisotropic conductive adhesive 242 of conductive particles in 241 to make the electrode 214 of the antenna and is used as the conductive thin film 229 are electrically connected to each other. As the anisotropic conductive adhesive 242, for example, can provide an anisotropic conductive paste (ACP), and the like. Alternatively, can be used such as the silver paste, copper paste, a conductive carbon paste therein and adhesive; such as ACP conductive adhesive; such as a plurality of conductive film ACF; NCP ; such as welded, the electrode 214 of the antenna and is used as the conductive thin film 229 are electrically connected to each other.

As the above-mentioned can be in the non-contact manner of transmitting and receiving data in the integrated circuit device signal transmitting system, the system can use the electromagnetic coupling, electromagnetic induction system, a microwave system, and the like. Consider the situation of use, professional can be appropriately chosen transmission system, can be according to a transmit system provides an optimal antenna.

For example, if electromagnetic coupling system or an electromagnetic induction system (such as 13.56MHz frequency band) in the integrated circuit device is used as a signal transmission system, can utilize the magnetic field density to the change of the electromagnetic induction. Therefore, as the antenna conductive thin film is formed in a ring shape (for example, loop antenna) or spiral form (for example, spiral antenna).

If the use of microwave system (e.g., UHF band (860-960MHz frequency band), 2.45 GHz frequency band, etc.) in the integrated circuit device as a signal emitting system, can be taken into consideration for the signal of the wavelength of the emission of electromagnetic wave, is set appropriate shape, such as the length of the antenna conductive film. For example, as the antenna conductive thin film may be formed as a linear shape, flat shape, ribbon and the like. Used as the shape of the conductive thin film of the antenna is not limited to the linear shape, taking into account the wavelength of the electromagnetic waves, as the antenna conductive thin film can be in order to curve, sinuous shape or their combination to provide.

Figure 25A of the antenna is shown as the examples of the conductive thin film, it is formed in a linear shape. Figure 25A in, integrated circuit device 1232 formed thereon is attached to the conductive film serving as an antenna (dipole antenna) 1231 base plate 1230.

Figure 25B of the antenna is shown as the examples of the conductive thin film, the formed in a planar shape. Figure 25B in, integrated circuit device 1242 formed thereon serving as an antenna attached to the conductive film (the patch antenna (  antenna patch)) 1241 substrate 1240.

Figure 25C of the antenna is shown as the examples of the conductive thin film, the formed ribbon-like shape. Figure 25C in, integrated circuit device 1252 formed thereon is attached to the conductive film serving as an antenna 1251 base plate 1250.

This application is based on Japan Patent office to the 2 September 2005 Japanese Patent application Serial number No. 2005-254481, all of its content referenced herein as a reference.