Method of fabricating semiconductor integrated circuit device

09-08-2007 дата публикации

Номер:

US2007184603A1

Автор: NISHIHARA SHINJI, IKEDA SHUJI, HASHIMOTO NAOTAKA, MOMIJI HIROSHI, ABE HIROMI, FUKADA SHINICHI, SUZUKI MASAYUKI

Принадлежит:

Контакты:

Номер заявки: 07-87-7831

Дата заявки: 06-04-2007

A Co silicide layer having a low resistance and a small junction leakage current is formed on the surface of the gate electrode, source and drain of MOSFETS by silicidizing a Co film deposited on a main plane of a wafer by sputtering using a high purity Co target having a Co purity of at least 99.99% and Fe and Ni contents of not greater than 10 ppm, preferably having a Co purity of 99.999%.

CPC - классификация

C C2 C23 C23C C23C1 C23C14 C23C14/C23C14/1 C23C14/16 C23C14/3 C23C14/34 C23C14/341 C23C14/3414 H H0 H01 H01L H01L2 H01L21 H01L21/H01L21/2 H01L21/28 H01L21/285 H01L21/2851 H01L21/28518 H01L21/2855 H01L21/3 H01L21/31 H01L21/316 H01L21/3160 H01L21/31608 H01L21/7 H01L21/76 H01L21/762 H01L21/7622 H01L21/76229 H01L21/768 H01L21/7682 H01L21/76828 H01L21/8 H01L21/82 H01L21/823 H01L21/8238 H01L21/82381 H01L21/823814 H01L21/82383 H01L21/823835 H01L21/82384 H01L21/823842 H01L21/82387 H01L21/823871 H01L23 H01L23/H01L23/5 H01L23/53 H01L23/532 H01L23/5322 H01L23/53223 H01L29 H01L29/H01L29/4 H01L29/45 H01L29/456 H01L29/49 H01L29/493 H01L29/4933 H01L29/6 H01L29/66 H01L29/665 H01L29/6656 H01L29/6659 H01L29/7 H01L29/78 H01L29/783 H01L29/7833 H01L292 H01L2924 H01L2924/H01L2924/0 H01L2924/00 H01L2924/000 H01L2924/0002

IPC - классификация

H H0 H01 H01L H01L2 H01L21 H01L21/H01L21/2 H01L21/28 H01L21/285 H01L21/3 H01L21/33 H01L21/336 H01L21/7 H01L21/76 H01L21/762 H01L21/8 H01L21/82 H01L21/823 H01L21/8238 H01L23 H01L23/H01L23/5 H01L23/53 H01L23/532 H01L29 H01L29/H01L29/4 H01L29/45 H01L29/49 H01L29/7 H01L29/78