Formation of bottom junction in vertical FET devices

12-12-2017 дата публикации

Номер:

US9842933B1

Автор: Daniel Chanemougame, Hiroaki Niimi, Kwan-Yong Lim, Steven John Bentley

Принадлежит: Globalfoundries Inc

Контакты:

Номер заявки:

Дата заявки:

CPC - классификация

H H0 H01 H01L H01L2 H01L20 H01L202 H01L2029 H01L2029/H01L2029/7 H01L2029/78 H01L2029/785 H01L2029/7858 H01L21 H01L21/H01L21/2 H01L21/26 H01L21/265 H01L21/3 H01L21/30 H01L21/306 H01L21/3060 H01L21/30604 H01L27 H01L27/H01L27/2 H01L27/24 H01L27/245 H01L27/2454 H01L29 H01L29/H01L29/0 H01L29/08 H01L29/084 H01L29/0847 H01L29/4 H01L29/42 H01L29/423 H01L29/4239 H01L29/42392 H01L29/6 H01L29/66 H01L29/666 H01L29/6666 H01L29/66666 H01L29/7 H01L29/78 H01L29/782 H01L29/7827 H01L29/786 H01L29/7861 H01L29/78618 H01L29/7864 H01L29/78642 H01L29/79 H01L29/792 H01L29/7926 H1 H10 H10B H10B6 H10B63 H10B63/H10B63/3 H10B63/34

IPC - классификация

C C0 C09 C09K C09K1 C09K13 C09K13/C09K13/0 C09K13/08 H H0 H01 H01L H01L2 H01L21 H01L21/H01L21/0 H01L21/02 H01L21/020 H01L21/0205 H01L21/02052 H01L29 H01L29/H01L29/0 H01L29/08 H01L29/084 H01L29/0847

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