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DOUBLE PATTERNING METHOD

Номер патента: US20160064248A1
Опубликовано: 03-03-2016
Автор(ы): Lee Chia-Ying, SHIEH JYU-HORNG
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Номер патента: US20180323067A1. Автор: John H. Zhang,Xiaoqiang Zhang,Jiehui SHU,Xusheng Yu. Владелец: Globalfoundries Inc. Дата публикации: 2018-11-08.

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Номер патента: US20210335664A1. Автор: Frederic LAZZARINO,Victor M. Blanco. Владелец: Interuniversitair Microelektronica Centrum vzw IMEC. Дата публикации: 2021-10-28.

Photo pattern method to increase via etching rate

Номер патента: US20170062270A1. Автор: Kuang-Wen Liu,Cheng-Wei Lin,Zheng-Chang MU. Владелец: Macronix International Co Ltd. Дата публикации: 2017-03-02.

Photo pattern method to increase via etching rate

Номер патента: US20160372401A1. Автор: Kuang-Wen Liu,Cheng-Wei Lin,Zheng-Chang MU. Владелец: Macronix International Co Ltd. Дата публикации: 2016-12-22.

Photo pattern method to increase via etching rate

Номер патента: US09741607B2. Автор: Kuang-Wen Liu,Cheng-Wei Lin,Zheng-Chang MU. Владелец: Macronix International Co Ltd. Дата публикации: 2017-08-22.

Photo pattern method to increase via etching rate

Номер патента: US09536808B1. Автор: Kuang-Wen Liu,Cheng-Wei Lin,Zheng-Chang MU. Владелец: Macronix International Co Ltd. Дата публикации: 2017-01-03.

PSPI-based patterning method for RDL

Номер патента: US11749668B2. Автор: Changoh Kim,JinHee Jung. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2023-09-05.

A patterning method

Номер патента: EP3901987A1. Автор: Frederic LAZZARINO,Victor M BLANCO. Владелец: Interuniversitair Microelektronica Centrum vzw IMEC. Дата публикации: 2021-10-27.

Patterning methods for semiconductor devices and structures resulting therefrom

Номер патента: US12002711B2. Автор: Wen-Yen Chen,Chih-hao Chen,Tai-Yen PENG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-06-04.

Patterning method and method for fabricating dual damascene opening

Номер патента: US20120122035A1. Автор: Yu-Tsung Lai,Jiunn-Hsiung Liao,Ming-Da Hsieh. Владелец: United Microelectronics Corp. Дата публикации: 2012-05-17.

Double Patterning Method Of Forming Semiconductor Active Areas And Isolation Regions

Номер патента: US20150206788A1. Автор: Chien-Sheng Su,Jeng-Wei Wang. Владелец: Silicon Storage Technology Inc. Дата публикации: 2015-07-23.

Double patterning techniques for forming a deep trench isolation structure

Номер патента: US20220285203A1. Автор: Yu-Wen Chen,Ching-Sen Kuo,Feng-Jia Shiu,Chun-Wei Chang,Wei-Chao Chiu,Yong-Jin LIOU. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-09-08.

Double patterning techniques for forming a deep trench isolation structure

Номер патента: US20230402315A1. Автор: Yu-Wen Chen,Ching-Sen Kuo,Feng-Jia Shiu,Chun-Wei Chang,Wei-Chao Chiu,Yong-Jin LIOU. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-12-14.

Fin-like field effect transistor patterning methods for achieving fin width uniformity

Номер патента: US11742415B2. Автор: Chih-Hao Wang,Kuan-Lun Cheng,Kuo-Cheng Ching,Shi Ning Ju. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-08-29.

Insulating layer patterning method, insulating layer formed by the insulating layer patterning method, display device having the insulating layer

Номер патента: US20070184667A1. Автор: Sang-jun Choi,Jung-hyun Lee,Sang-Bong Bang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2007-08-09.

Fin-Like Field Effect Transistor Patterning Methods For Achieving Fin Width Uniformity

Номер патента: US20210175341A1. Автор: Chih-Hao Wang,Kuan-Lun Cheng,Kuo-Cheng Ching,Shi Ning Ju. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-06-10.

Fin-Like Field Effect Transistor Patterning Methods For Achieving Fin Width Uniformity

Номер патента: US20230378330A1. Автор: Chih-Hao Wang,Kuan-Lun Cheng,Kuo-Cheng Ching,Shi Ning Ju. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-23.

Method of forming pad pattern using self-align double patterning method, and method of forming contact hole using self-align double patterning method

Номер патента: KR100790998B1. Автор: 이지영,장대현. Владелец: 삼성전자주식회사. Дата публикации: 2008-01-03.

Self-aligned double patterning

Номер патента: US12068167B2. Автор: Jyu-Horng Shieh,Yu-Yu Chen,Kuan-Wei Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-20.

Patterning mask and method of formation of mask using step double patterning

Номер патента: US20110217843A1. Автор: Anton Devilliers,Michael Hyatt. Владелец: Individual. Дата публикации: 2011-09-08.

Reverse self aligned double patterning process for back end of line fabrication of a semiconductor device

Номер патента: US09941154B2. Автор: John Jianhong ZHU,Stanley Seungchul SONG,Zhongze Wang,Choh fei Yeap. Владелец: Qualcomm Inc. Дата публикации: 2018-04-10.

Reverse self aligned double patterning process for back end of line fabrication of a semiconductor device

Номер патента: US09564361B2. Автор: John Jianhong ZHU,Stanley Seungchul SONG,Zhongze Wang,Choh fei Yeap. Владелец: Qualcomm Inc. Дата публикации: 2017-02-07.

Method of forming fine patterns of semiconductor device using double patterning process

Номер патента: KR100771891B1. Автор: 박상준,서준,강창진,조성일,권용현,하재규. Владелец: 삼성전자주식회사. Дата публикации: 2007-11-01.

Self-aligned double patterning

Номер патента: US11784056B2. Автор: Jyu-Horng Shieh,Yu-Yu Chen,Kuan-Wei Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-10-10.

SELF-ALIGNED DOUBLE PATTERNING PROCESS AND SEMICONDUCTOR STRUCTURE FORMED USING THEREOF

Номер патента: US20210035809A1. Автор: Wang Yu-Wen,Tzeng Kuo-Chyuan. Владелец: . Дата публикации: 2021-02-04.

SELF-ALIGNED DOUBLE PATTERNING PROCESS AND SEMICONDUCTOR STRUCTURE FORMED USING THEREOF

Номер патента: US20200058514A1. Автор: Wang Yu-Wen,Tzeng Kuo-Chyuan. Владелец: . Дата публикации: 2020-02-20.

METAL FILL OPTIMIZATION FOR SELF-ALIGNED DOUBLE PATTERNING

Номер патента: US20180082854A1. Автор: Clevenger Lawrence A.,Chu Albert M.,Na Myung-Hee,GUAN Ximeng. Владелец: . Дата публикации: 2018-03-22.

Self-aligned double patterning

Номер патента: US20210125836A1. Автор: Jyu-Horng Shieh,Yu-Yu Chen,Kuan-Wei Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-04-29.

Double patterning strategy for contact hole and trench

Номер патента: TWI424469B. Автор: Fengcheng Hsu,Chunkuang Chen. Владелец: Taiwan Semiconductor Mfg. Дата публикации: 2014-01-21.

Self-Aligned Double Patterning

Номер патента: US20230282488A1. Автор: Jyu-Horng Shieh,Yu-Yu Chen,Kuan-Wei Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-09-07.

Contact patterning method with transition etch feedback

Номер патента: US20110183443A1. Автор: FANG CHENG,Nikki Edleman,Alois Gutmann,Sung-Chul Park,Byung-Goo Jeon. Владелец: Individual. Дата публикации: 2011-07-28.

Contact patterning method with transition etch feedback

Номер патента: SG161185A1. Автор: Park Sung-Chul,Fang Chen,Nikki Edleman,Alois Gutmann,Jeon Byung-Goo. Владелец: Infineon Technologies Corp. Дата публикации: 2010-05-27.

Method of removing metal residue using gas phase cleaning, method of forming a conductive layer pattern, method of manufacturing a semiconductor device and related equipment

Номер патента: KR101603737B1. Автор: 황기현,최한메,박영근,유동철,양준규. Владелец: 삼성전자주식회사. Дата публикации: 2016-03-16.

Double patterning interconnect integration scheme with sav

Номер патента: US20210118732A1. Автор: Chih-Chao Yang,Terry A. Spooner,Shyng-Tsong Chen,Koichi Motoyama. Владелец: International Business Machines Corp. Дата публикации: 2021-04-22.

Self-aligned double patterning with mandrel manipulation

Номер патента: US20240162090A1. Автор: David Pritchard,Elizabeth Strehlow,Hongru Ren,James Mazza,Romain Feuillette. Владелец: GlobalFoundries US Inc. Дата публикации: 2024-05-16.

Semiconductor device using double patterning technology and method for manufacturing same

Номер патента: KR101654048B1. Автор: 최성운,문성호,오석환,한소라,강율,김형희. Владелец: 삼성전자주식회사. Дата публикации: 2016-09-05.

Via contact patterning method to increase edge placement error margin

Номер патента: US11211324B2. Автор: Jason W. Klaus,Mohit K. HARAN,Charles Henry Wallace,Reken Patel,Debashish Basu,Deepak S. RAO,James Jeong,Ruth Amy Brain,Daniel James Bahr,Marvin Young Paik,Seungdo An,Kilhyun Bang. Владелец: Intel Corp. Дата публикации: 2021-12-28.

Via contact patterning method to increase edge placement error margin

Номер патента: US20210082805A1. Автор: Jason W. Klaus,Mohit K. HARAN,Charles Henry Wallace,Reken Patel,Debashish Basu,Deepak S. RAO,James Jeong,Ruth Amy Brain,Daniel James Bahr,Marvin Young Paik,Seungdo An,Kilhyun Bang. Владелец: Intel Corp. Дата публикации: 2021-03-18.

Via contact patterning method to increase edge placement error margin

Номер патента: US20220051975A1. Автор: Jason W. Klaus,Mohit K. HARAN,Charles Henry Wallace,Reken Patel,Debashish Basu,Deepak S. RAO,James Jeong,Ruth Amy Brain,Daniel James Bahr,Marvin Young Paik,Seungdo An,Kilhyun Bang. Владелец: Intel Corp. Дата публикации: 2022-02-17.

Graphene patterning method and patterning member

Номер патента: US9219008B2. Автор: Takashi Matsumoto,Yusaku Kashiwagi. Владелец: Tokyo Electron Ltd. Дата публикации: 2015-12-22.

Self-aligned patterning methods which implement directed self-assembly

Номер патента: US20190221428A1. Автор: Ankit Vora,Kafai Lai,Sivananda K. Kanakasabapathy,Kristin Schmidt,Sean D. Burns,Chi-chun Liu. Владелец: International Business Machines Corp. Дата публикации: 2019-07-18.

Graphene patterning method and patterning member

Номер патента: US20140199829A1. Автор: Takashi Matsumoto,Yusaku Kashiwagi. Владелец: Tokyo Electron Ltd. Дата публикации: 2014-07-17.

Double patterning lithography techniques

Номер патента: US20140017899A1. Автор: Matthew L. Tingey,Charles H. Wallace,Swaminathan Sivakumar,Nadia M. Rahhal-Orabi,Chanaka D. Munasinghe. Владелец: Intel Corp. Дата публикации: 2014-01-16.

Thin film resistor mismatch improvement using a self-aligned double pattern (sadp) technique

Номер патента: US20240113156A1. Автор: ABBAS Ali,Sameer Prakash Pendharkar,Scott William Jessen,Steven Lee Prins,Gregory Boyd SHINN. Владелец: Texas Instruments Inc. Дата публикации: 2024-04-04.

Patterning method employing half tone mask, array substrate and display device

Номер патента: US20180254289A1. Автор: Yongliang Zhao,Zhonghao Huang,Hongru ZHOU,Houfeng ZHOU,Zhiyong NING. Владелец: Chongqing BOE Optoelectronics Technology Co Ltd. Дата публикации: 2018-09-06.

Patterning method employing half tone mask, array substrate and display device

Номер патента: US10276608B2. Автор: Yongliang Zhao,Zhonghao Huang,Hongru ZHOU,Houfeng ZHOU,Zhiyong NING. Владелец: Chongqing BOE Optoelectronics Technology Co Ltd. Дата публикации: 2019-04-30.

METHOD OF SELF-ALIGNED DOUBLE PATTERNING

Номер патента: US20190139824A1. Автор: Chang Feng-Yi,Lin Ying-Chih,Chen Chieh-Te,Lee Fu-Che,Chang Yi-Ching,LIN Gang-Yi. Владелец: . Дата публикации: 2019-05-09.

Self-aligned double patterning (sadp) method

Номер патента: US20200098580A1. Автор: Jui-Yu Pan,Kuo-Chyuan Tzeng,Lee-Chuan Tseng,Ying-Hua Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-03-26.

Patterning method

Номер патента: US20090081817A1. Автор: Min-Chieh Yang,Jiunn-Hsiung Liao,Lung-En Kuo. Владелец: United Microelectronics Corp. Дата публикации: 2009-03-26.

Nanoscale patterning method and integrated device for electronic apparatus manufactured therefrom

Номер патента: US09812333B2. Автор: Sang Ouk Kim,Hyoung-Seok Moon. Владелец: Korea Advanced Institute of Science and Technology KAIST. Дата публикации: 2017-11-07.

Film patterning method

Номер патента: US20170084451A1. Автор: Li Li,Zhilong PENG,Wukun Dai,Yiping Dong. Владелец: Beijing BOE Optoelectronics Technology Co Ltd. Дата публикации: 2017-03-23.

Method for forming self-aligned double pattern and semiconductor structures

Номер патента: US12100593B2. Автор: Zhongming Liu. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-09-24.

Method for forming self-aligned double pattern, and semiconductor structure

Номер патента: EP4181172A1. Автор: Zhongming Liu. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-05-17.

Patterning method

Номер патента: US10460939B1. Автор: Feng-Yi Chang,Fu-Che Lee,Hsin-Yu Chiang. Владелец: Fujian Jinhua Integrated Circuit Co Ltd. Дата публикации: 2019-10-29.

Double patterning method of patterning a substrate

Номер патента: WO2024054362A1. Автор: Jeffrey Smith,David O'Meara,Jodi Grzeskowiak,Eric Chih-Fang Liu,Katie Lutker-Lee,Steven Grzeskowiak. Владелец: Tokyo Electron U.S. Holdings, Inc.. Дата публикации: 2024-03-14.

Double Patterning Method of Patterning a Substrate

Номер патента: US20240087892A1. Автор: Jeffrey Smith,David L. O'Meara,Jodi Grzeskowiak,Eric Chih-Fang Liu,Katie Lutker-Lee,Steven Grzeskowiak. Владелец: Tokyo Electron Ltd. Дата публикации: 2024-03-14.

Methods of fabricating semiconductor devices having double patterning technology

Номер патента: US20140154885A1. Автор: Jinhyun Shin,Jae-Hwang Sim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2014-06-05.

Method for forming semiconductor device structure using double patterning

Номер патента: US20180145145A1. Автор: Yi-Wei Chiu,Po-Ju Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-05-24.

Integrated circuits having signal lines formed with double patterning

Номер патента: US12100655B2. Автор: Chung-Chieh Yang,Yung-Chow Peng,Ching-Ting LU. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-24.

Method of fine line space resolution lithography for integrated circuit features using double patterning technology

Номер патента: US09865500B2. Автор: Jyu-Horng Shieh,Chia-Ying Lee. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-01-09.

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES WITH COMBINED ARRAY AND PERIPHERY PATTERNING IN SELF-ALIGNED DOUBLE PATTERNING

Номер патента: US20160365311A1. Автор: Han Tzung-Ting,Hung Yu-Min,HSU Miao-Chih. Владелец: . Дата публикации: 2016-12-15.

Method of forming a fine pattern of a semiconductor device using a double patterning technique

Номер патента: US7977204B2. Автор: Yong-Il Kim,Makoto Yoshida,Hyeong-Sun HONG,Bong-Soo Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2011-07-12.

THE NOVEL DOUBLE PATTERNING APPROACH BY DIRECT METAL ETCH

Номер патента: US20220285214A1. Автор: Lu Chih-Wei,Liao Wei-Hao,Lee Chung-Ju,Yao Hsin-Chieh,TIEN Hsi-Wen,Dai Yu-Teng. Владелец: Taiwan Semiconductor Manufacturing Company Limited. Дата публикации: 2022-09-08.

METAL SPACER SELF ALIGNED DOUBLE PATTERNING WITH AIRGAP INTEGRATION

Номер патента: US20200135537A1. Автор: Clevenger Lawrence A.,Kelly James,Mignot Yann,Chen Hsueh-Chung,Peethala Cornelius Brown. Владелец: . Дата публикации: 2020-04-30.

Spacer formation for array double patterning

Номер патента: KR101698616B1. Автор: 에스 엠 레자 사드자디,아미트 자인. Владелец: 램 리써치 코포레이션. Дата публикации: 2017-01-20.

Method for off-grid routing structures utilizing self aligned double patterning (SADP) technology

Номер патента: US8921225B2. Автор: Lei Yuan,Harry Levinson,Jongwook Kye. Владелец: Globalfoundries Inc. Дата публикации: 2014-12-30.

Fine line space resolution lithography structure for integrated circuit features using double patterning technology

Номер патента: US9613903B2. Автор: Jyu-Horng Shieh,Chia-Ying Lee. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-04-04.

Method for off-grid routing structures utilizing self aligned double patterning technology

Номер патента: CN104064515B. Автор: J·桂,袁磊,H·J·莱文森. Владелец: Globalfoundries Inc. Дата публикации: 2017-04-12.

Method of fine line space resolution lithography for integrated circuit features using double patterning technology

Номер патента: US9204538B2. Автор: Jyu-Horng Shieh,Chia-Ying Lee. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2015-12-01.

Method of forming semiconductor devices employing double patterning

Номер патента: US20100178773A1. Автор: Jong-Sun Sel,Nam-su Lim,In-wook Oh. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2010-07-15.

Method for off-grid routing structures utilizing self aligned double patterning (sadp) technology

Номер патента: TWI560756B. Автор: Lei Yuan,Harry Levinson,Jongwook Kye. Владелец: GlobalFoundries US Inc. Дата публикации: 2016-12-01.

Integrated circuits having signal lines formed with double patterning

Номер патента: US20230378060A1. Автор: Chung-Chieh Yang,Yung-Chow Peng,Ching-Ting LU. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-23.

Patterning method for semiconductor device and structures resulting therefrom

Номер патента: US20200006082A1. Автор: Yi-Nien Su. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-01-02.

Methods for Preparing Alkaline Solution, Alkaline Solution Prepared Thereby, Methods for Forming Pattern, Methods for Stripping Resist Film, Apparatus for Applying Liquid Chemical, Methods for Treating Substrate, and Methods for Supplying Liquid Chemical

Номер патента: KR100509536B1. Автор: 신이찌 이또,리이찌로 다까하시,게이 하야사끼,도모유끼 다께이시. Владелец: 가부시끼가이샤 도시바. Дата публикации: 2005-08-23.

Apparatus of forming liquid-mediated material pattern, method of manufacturing the same, method of forming liquid-mediated pattern using the same, and liquid-mediated pattern

Номер патента: KR102146284B1. Автор: 김태성,배주열. Владелец: 울산과학기술원. Дата публикации: 2020-08-20.

Alignment Target Contrast in a Lithographic Double Patterning Process

Номер патента: US20140192333A1. Автор: Mircea Dusa,Manfred Gawein Tenner,Harry Sewell,Richard Johannes Franciscus Van Haren,Maya Angelova Doytcheva. Владелец: Asml Holding Nv. Дата публикации: 2014-07-10.

Method for double patterning a thin film

Номер патента: US20080076075A1. Автор: Sandra L. Hyland,Shannon W. Dunn. Владелец: Tokyo Electron Ltd. Дата публикации: 2008-03-27.

Patterning method and semiconductor structure including forming a plurality of holes using line pattern masks

Номер патента: US09412615B2. Автор: Chin-Cheng Yang. Владелец: Macronix International Co Ltd. Дата публикации: 2016-08-09.

Patterning method using electron beam and exposure system configured to perform the same

Номер патента: US09411236B2. Автор: Yongseok Jung,Sanghee Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-08-09.

Azimuthal critical dimension non-uniformity for double patterning process

Номер патента: US20200002815A1. Автор: Ravi Kumar,Adrien Lavoie,Pulkit Agarwal,Frank Loren PASQUALE. Владелец: Lam Research Corp. Дата публикации: 2020-01-02.

Double patterning method

Номер патента: TW201003734A. Автор: Michael Chan. Владелец: SanDisk 3D LLC. Дата публикации: 2010-01-16.

LINE-END CUTTING METHOD FOR FIN STRUCTURES OF FINFETS FORMED BY DOUBLE PATTERNING TECHNOLOGY

Номер патента: US20160254369A1. Автор: Li Ming,YI Chunyan. Владелец: Shanghai IC R & Center Co., Ltd.. Дата публикации: 2016-09-01.

Double patterning etching process

Номер патента: KR20140069027A. Автор: 징 탕,니틴 잉글,케다르 사프레,아제이 바트나거,산카 벤카타라만. Владелец: 어플라이드 머티어리얼스, 인코포레이티드. Дата публикации: 2014-06-09.

Fin structure line top end cutting method for double-pattern finned type effect transistor

Номер патента: CN104157574A. Автор: 李铭,易春艳. Владелец: Shanghai Integrated Circuit Research and Development Center Co Ltd. Дата публикации: 2014-11-19.

Method for manufacturing metal fluoride-containing organic polymer film, patterning method, and method for manufacturing semiconductor device

Номер патента: US20230089206A1. Автор: Koji Asakawa,Ryosuke Yamamoto,Shinobu Sugimura,Norikatsu Sasao. Владелец: Kioxia Corp. Дата публикации: 2023-03-23.

Hard mask including amorphous or nanocrystalline boron nitride film and method of fabricating the hard mask, and patterning method using the hard mask

Номер патента: EP4009350B1. Автор: Hyeonjin Shin,Taejin CHOI. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-17.

Fine patterning methods and methods of fabricating semiconductor devices using the same

Номер патента: US20160247725A1. Автор: Myeongcheol Kim,Sungbong Kim,Gyeong-seop Kim. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2016-08-25.

Patterning method and overlay measurement method

Номер патента: US12106962B2. Автор: Chien-Hao Chen,Chia-Chang Hsu,Chun-Chi Yu,Yi Jing Wang,Chang-Mao Wang. Владелец: United Microelectronics Corp. Дата публикации: 2024-10-01.

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Номер патента: US20240176245A1. Автор: Jong-wan Park,Wan-Gyu Lee,Jungchul SONG,Min Jun BAK. Владелец: Korea Advanced Institute of Science and Technology KAIST. Дата публикации: 2024-05-30.

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Номер патента: US20170097570A1. Автор: Seiichi Tagawa. Владелец: Osaka University NUC. Дата публикации: 2017-04-06.

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Номер патента: US20240224770A1. Автор: Yong Taek Hong,Su Jin JEONG. Владелец: SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION. Дата публикации: 2024-07-04.

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Номер патента: EP4444065A1. Автор: Yong Taek Hong,Su Jin JEONG. Владелец: Seoul National R&bd Foundation. Дата публикации: 2024-10-09.

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Номер патента: EP1887614A4. Автор: Yoshio Mita,Tarik Bourouina,Federic Marty. Владелец: Advantest Corp. Дата публикации: 2008-12-24.

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Номер патента: US20190157082A1. Автор: Huo Zongliang,XIA Zhiliang,Hua Zi Qun,Feng Yaobin,Cao Qingchen,FAN Lu Ming,LI Bi Feng. Владелец: Yangtze Memory Technologies Co., Ltd.. Дата публикации: 2019-05-23.

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Номер патента: US20200321215A1. Автор: Huo Zongliang,XIA Zhiliang,Hua Zi Qun,Feng Yaobin,Cao Qingchen,FAN Lu Ming,LI Bi Feng. Владелец: Yangtze Memory Technologies Co., Ltd.. Дата публикации: 2020-10-08.

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Номер патента: WO2019100899A1. Автор: Zhiliang Xia,Zongliang Huo,Luming FAN,Ziqun HUA,Bifeng LI,Qingchen CAO,Yaobin FENG. Владелец: Yangtze Memory Technologies Co., Ltd.. Дата публикации: 2019-05-31.

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Номер патента: US20150206788A1. Автор: Su Chien-Sheng,Wang Jeng-Wei. Владелец: Silicon Storage Technology, Inc.. Дата публикации: 2015-07-23.

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Номер патента: US9293358B2. Автор: Jeng-Wei Yang,Chien-Sheng Su. Владелец: Silicon Storage Technology Inc. Дата публикации: 2016-03-22.

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Номер патента: US20130217233A1. Автор: Chia-Wei Chang,Ryan Chia-Jen Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2013-08-22.

Self-Aligned Double Patterning

Номер патента: US20160020100A1. Автор: Lee Chia-Ying,Liang Ming-Chung,Huang Kuan-Wei. Владелец: . Дата публикации: 2016-01-21.

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Номер патента: US20160079063A1. Автор: BAO Tien-I,Lee Chung-Ju,SHUE Shau-Lin,Yao Hsin-Chieh,Wu Yung-Hsu. Владелец: . Дата публикации: 2016-03-17.

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Номер патента: US20210082698A1. Автор: Liao Wei-Hao,Lee Chung-Ju,TIEN Hsi-Wen,Dai Pin-Ren,Lu Chih Wei. Владелец: . Дата публикации: 2021-03-18.

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Номер патента: US20220285203A1. Автор: CHANG Chun-Wei,Chen Yu-Wen,Shiu Feng-Jia,KUO Ching-Sen,CHIU Wei-Chao,LIOU Yong-Jin. Владелец: . Дата публикации: 2022-09-08.

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Номер патента: US20210183654A1. Автор: Liao Wei-Hao,Lee Chung-Ju,TIEN Hsi-Wen,Dai Pin-Ren,Lu Chih Wei. Владелец: . Дата публикации: 2021-06-17.

Integrated circuit layout and method with double patterning

Номер патента: US8987008B2. Автор: Ming-Feng Shieh,Ru-Gun Liu,Yao-Ching Ku,Tsai-Sheng Gau,Hung-Chang Hsieh. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2015-03-24.

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Номер патента: US9029263B1. Автор: Ryoung-han Kim,Youn Sung Choi. Владелец: Texas Instruments Inc. Дата публикации: 2015-05-12.

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Номер патента: CN104051255B. Автор: 张海洋,张城龙. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2017-06-13.

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Номер патента: US6861377B1. Автор: Hironori Hasei,Toshimitsu Hirai. Владелец: Seiko Epson Corp. Дата публикации: 2005-03-01.

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Номер патента: US20190074172A1. Автор: Taishi Ebisudani,Yoshio SUSA,Yuko KENGOYAMA. Владелец: ASM IP Holding BV. Дата публикации: 2019-03-07.

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Номер патента: US20190074172A1. Автор: KENGOYAMA Yuko,Susa Yoshio,EBISUDANI Taishi. Владелец: ASM IP HOLDING B.V.. Дата публикации: 2019-03-07.

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Номер патента: US20170352616A1. Автор: Hyatt Michael D.,Yang Ming-Chuan,Sipani Vishal,Kewley David A.,Armstrong Kyle,Van Patten Michael Dean. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2017-12-07.

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Номер патента: US12106964B2. Автор: Ting-Wei Wu,Chu-Chun HSIEH,Chih-Jung Ni. Владелец: Winbond Electronics Corp. Дата публикации: 2024-10-01.

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Номер патента: US20240081056A1. Автор: Zih-Song Wang,Yi-Yeh Chuang,Li-Ta Chen,Shun-Yu Gao. Владелец: Powerchip Semiconductor Manufacturing Corp. Дата публикации: 2024-03-07.

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Номер патента: US11990345B2. Автор: Tao Liu,Jun Xia,Penghui Xu,Sen Li,Qiang Wan,Kangshu ZHAN. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-05-21.

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Номер патента: US20160163584A1. Автор: Yuan Lei,Kye Jongwook,Woo Youngtag,Zeng Jia. Владелец: . Дата публикации: 2016-06-09.

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Номер патента: US20210280457A1. Автор: Lanzillo Nicholas Anthony,ROBISON Robert,Dechene Daniel James,Philip Timothy Mathew. Владелец: . Дата публикации: 2021-09-09.

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Номер патента: US20200357686A1. Автор: Mignot Yann,Chen Hsueh-Chung. Владелец: . Дата публикации: 2020-11-12.

Layout design for fanout patterns in self-aligned double patterning process

Номер патента: US20190385848A1. Автор: Chin-Cheng Yang,Chi-Hao Huang,Wei-Hung Wang. Владелец: Macronix International Co Ltd. Дата публикации: 2019-12-19.

Layout design for fanout patterns in self-aligned double patterning process

Номер патента: EP3584836B1. Автор: Chin-Cheng Yang,Chi-Hao Huang,Wei-Hung Wang. Владелец: Macronix International Co Ltd. Дата публикации: 2021-10-27.

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Номер патента: US20130171821A1. Автор: KIM Bong-cheol,Lee Dae-youp. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2013-07-04.

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Номер патента: US20150028489A1. Автор: Yuan Lei,Kye Jongwook,LEVINSON Harry. Владелец: . Дата публикации: 2015-01-29.

Wafer Bonding Edge Protection Using Double Patterning With Edge Exposure

Номер патента: US20170053891A1. Автор: Rubin Joshua M.. Владелец: . Дата публикации: 2017-02-23.

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Номер патента: US20150076704A1. Автор: Wang Zhongze,Yeap Choh Fei,SONG Stanley Seungchul,Zhu John Jianhong. Владелец: QUALCOMM Incorporatd. Дата публикации: 2015-03-19.

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Номер патента: US20150091174A1. Автор: CLARKE JAMES S.,SCHENKER Richard E.,Schmitz Anthony C.. Владелец: . Дата публикации: 2015-04-02.

REVERSE SELF ALIGNED DOUBLE PATTERNING PROCESS FOR BACK END OF LINE FABRICATION OF A SEMICONDUCTOR DEVICE

Номер патента: US20170110364A1. Автор: Wang Zhongze,Yeap Choh Fei,SONG Stanley Seungchul,Zhu John Jianhong. Владелец: . Дата публикации: 2017-04-20.

Photoresist double patterning

Номер патента: KR101573954B1. Автор: 에스 엠 레자 사드자디,앤드류 알 로마노. Владелец: 램 리써치 코포레이션. Дата публикации: 2015-12-02.

Photoresist double patterning apparatus

Номер патента: US8911587B2. Автор: Andrew R. Romano,S. M. Reza Sadjadi. Владелец: Lam Research Corp. Дата публикации: 2014-12-16.

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Номер патента: WO2015048226A1. Автор: James S. Clarke,Richard E. Schenker,Anthony C. SCHMITZ. Владелец: Intel Corporation. Дата публикации: 2015-04-02.

Photoresist double patterning

Номер патента: TWI447800B. Автор: S M Reza Sadjadi,Andrew R Romano. Владелец: Lam Res Corp. Дата публикации: 2014-08-01.

Two-track cross-connect in double-patterned structure using rectangular via

Номер патента: US9024450B2. Автор: James Walter Blatchford,Scott William Jessen. Владелец: Texas Instruments Inc. Дата публикации: 2015-05-05.

Method, system, and program product for routing an integrated circuit to be manufactured by doubled patterning

Номер патента: US8782586B2. Автор: Abdurrahman Sezginer,Jason Sweis,Vassilios Gerousis,David Cooke Noice,Sozen Yao. Владелец: Cadence Design Systems Inc. Дата публикации: 2014-07-15.

Method, system, and program product for routing an integrated circuit to be manufactured by doubled patterning

Номер патента: TWI509442B. Автор: Abdurrahman Sezginer,Jason Sweis,Vassilios Gerousis,David Cooke Noice,Sozen Yao. Владелец: Cadence Design Systems Inc. Дата публикации: 2015-11-21.

Self-aligned double patterning process and semiconductor structure formed using thereof

Номер патента: KR102293009B1. Автор: 유-웬 왕,쿠오-치유안 증. Владелец: 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드. Дата публикации: 2021-08-27.

Method of forming a wiring pattern, method of manufacturing a device, device, electro-optic device, and electronic instrument

Номер патента: TWI317254B. Автор: Toshimitsu Hirai,Katsuyuki Moriya. Владелец: Seiko Epson Corp. Дата публикации: 2009-11-11.

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Номер патента: TW200618701A. Автор: Toshimitsu Hirai,Katsuyuki Moriya. Владелец: Seiko Epson Corp. Дата публикации: 2006-06-01.

Dummy metal pattern method and apparatus

Номер патента: US20030109120A1. Автор: XIAOJUN Wang. Владелец: Individual. Дата публикации: 2003-06-12.

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Номер патента: US09620714B2. Автор: Gen Fujii,Erika TAKAHASHI. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2017-04-11.

Dummy metal pattern method and apparatus

Номер патента: TW200301517A. Автор: XIAOJUN Wang. Владелец: Aurora Sys Inc. Дата публикации: 2003-07-01.

Dummy metal pattern method and apparatus

Номер патента: TW571358B. Автор: XIAOJUN Wang. Владелец: Aurora Sys Inc. Дата публикации: 2004-01-11.

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Номер патента: CN107709609B. Автор: 小泉翔平,川上雄介. Владелец: Nikon Corp. Дата публикации: 2020-08-14.

Method for manufacturing wiring pattern, method for manufacturing electroconductive film, method for manufacturing transistor

Номер патента: TW201716626A. Автор: 小泉翔平,川上雄介. Владелец: 尼康股份有限公司. Дата публикации: 2017-05-16.

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Номер патента: KR101437552B1. Автор: 김정훈,김은경,김종학,나종범,박치현,고종관. Владелец: 연세대학교 산학협력단. Дата публикации: 2014-09-16.

The patterning method of mesoporous inorganic oxide film and solar cell comprising the mesoporous inorganic oxide film patterned by the method

Номер патента: KR20140007037A. Автор: 김정훈,김은경,김종학,나종범,박치현,고종관. Владелец: 연세대학교 산학협력단. Дата публикации: 2014-01-16.

Method and device of forming a pattern, method of manufacturing a device, conductive film wiring, electric optical device, and electronic apparatus

Номер патента: KR100594836B1. Автор: 히라이도시미츠,하세이히로노리. Владелец: 세이코 엡슨 가부시키가이샤. Дата публикации: 2006-07-03.

Double patterning method

Номер патента: US9431266B2. Автор: Ying Zhang,Kangguo Cheng,Bruce B. Doris,Ali Khakifirooz. Владелец: International Business Machines Corp. Дата публикации: 2016-08-30.

Double patterning method

Номер патента: US20140024215A1. Автор: Ying Zhang,Kangguo Cheng,Bruce B. Doris,Ali Khakifirooz. Владелец: International Business Machines Corp. Дата публикации: 2014-01-23.

Double patterning method

Номер патента: US20150056809A1. Автор: Ying Zhang,Kangguo Cheng,Bruce B. Doris,Ali Khakifirooz. Владелец: International Business Machines Corp. Дата публикации: 2015-02-26.

Using a same mask for direct print and self-aligned double patterning of nanosheets

Номер патента: US12080559B2. Автор: Eric Miller,Daniel James Dechene,Stuart Sieg. Владелец: International Business Machines Corp. Дата публикации: 2024-09-03.

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Номер патента: US20230230842A1. Автор: Jie Bai,Juanjuan Huang. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-07-20.

Patterning methods, methods of fabricating semiconductor devices using the same, and semiconductor devices fabricated thereby

Номер патента: US09685606B2. Автор: Inho Kim,Jongchul Park,Jongsoon Park,Hyungjoon Kwon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-06-20.

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Номер патента: US20150170971A1. Автор: Scott William Jessen,Gregory Charles Baldwin. Владелец: Texas Instruments Inc. Дата публикации: 2015-06-18.

Method of forming fine patterns of semiconductor device by using double patterning process which uses acid diffusion

Номер патента: US8431331B2. Автор: Suk-joo Lee,Jung-Hyeon Lee,Yool Kang,Shi-Yong Yi. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2013-04-30.

Self-aligned nand flash select-gate wordlines for spacer double patterning

Номер патента: CN105742163A. Автор: T-S·陈,S·房. Владелец: Cypress Semiconductor Corp. Дата публикации: 2016-07-06.

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Номер патента: US20140248773A1. Автор: Jen-Hsiang Tsai. Владелец: Winbond Electronics Corp. Дата публикации: 2014-09-04.

Patterning method and method of forming memory device

Номер патента: KR101508368B1. Автор: 전-시앙 차이. Владелец: 윈본드 일렉트로닉스 코포레이션. Дата публикации: 2015-04-07.

Hybrid Double Patterning Method for Semiconductor Manufacture

Номер патента: US20190080921A1. Автор: Ru-Gun Liu,Chih-Ming Lai,Ken-Hsien Hsieh,Dong-Yo Jheng,Wen-Li Cheng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2019-03-14.

Hybrid Double Patterning Method for Semiconductor Manufacture

Номер патента: US20190252200A1. Автор: Ru-Gun Liu,Chih-Ming Lai,Ken-Hsien Hsieh,Dong-Yo Jheng,Wen-Li Cheng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2019-08-15.

Hybrid Double Patterning Method for Semiconductor Manufacture

Номер патента: US20200083058A1. Автор: Ru-Gun Liu,Chih-Ming Lai,Ken-Hsien Hsieh,Dong-Yo Jheng,Wen-Li Cheng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-03-12.

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Номер патента: US20150108422A1. Автор: Marcello Mariani,Fabio Pellizzer,Giorgio Servalli. Владелец: Micron Technology Inc. Дата публикации: 2015-04-23.

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Номер патента: US20180114813A1. Автор: Mariani Marcello,Servalli Giorgio,Pellizzer Fabio. Владелец: . Дата публикации: 2018-04-26.

Double patterning method for creating a regular array of pillars with dual shallow trench isolation

Номер патента: US8921196B2. Автор: Marcello Mariani,Fabio Pellizzer,Giorgio Servalli. Владелец: Micron Technology Inc. Дата публикации: 2014-12-30.

Method For Self-Aligned Double Patterning Without Atomic Layer Deposition

Номер патента: US20150214070A1. Автор: deVilliers Anton. Владелец: . Дата публикации: 2015-07-30.

Selective inductive double patterning

Номер патента: KR101631047B1. Автор: 에스 엠 레자 사드자디. Владелец: 램 리써치 코포레이션. Дата публикации: 2016-06-16.

Method of forming self aligned double pattern

Номер патента: KR100714305B1. Автор: 홍창기,윤보언,최재광,권병호,박준상,윤세라. Владелец: 삼성전자주식회사. Дата публикации: 2007-05-02.

Semiconductor device with have buried gate electrode and isolation layer using salf aligned double patterning technology and a method for manufacturing the same

Номер патента: KR101529867B1. Автор: 염계희. Владелец: 삼성전자주식회사. Дата публикации: 2015-06-18.

Semiconductor devices including buried gate electrodes and isolation layers and methods of forming semiconductor devices including buried gate electrodes and isolation layers using self aligned double patterning

Номер патента: US8486818B2. Автор: Kye-hee Yeom. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2013-07-16.

Double patterning via triangular shaped sidewall spacers

Номер патента: US8969205B2. Автор: Dae-Han Choi,Hongliang Shen,Dae Geun Yang,Jung Yu Hsieh. Владелец: Globalfoundries Inc. Дата публикации: 2015-03-03.

Method of forming pattern, method of manufacturing semiconductor device, and pattern-forming material

Номер патента: US20210296116A1. Автор: Koji Asakawa,Shinobu Sugimura,Norikatsu Sasao. Владелец: Kioxia Corp. Дата публикации: 2021-09-23.

Substrate Mask Patterns, Methods Of Forming A Structure On A Substrate, Methods Of Forming A Square Lattice Pattern From An Oblique Lattice Pattern, And Methods Of Forming A Pattern On A Substrate

Номер патента: US20150206760A1. Автор: deVilliers Anton J.,Shea Kevin R.,Khurana Ranjan,Sipani Vishal,Brown William R.,Trapp Shane J.. Владелец: . Дата публикации: 2015-07-23.

Patterning Method Using Secondary Resist Surface Functionalization for Mask Formation

Номер патента: US20240030029A1. Автор: Charlotte Cutler,David Conklin. Владелец: Tokyo Electron Ltd. Дата публикации: 2024-01-25.

Method of forming pattern, method of manufacturing semiconductor device, and pattern-forming material

Номер патента: US20210296116A1. Автор: Koji Asakawa,Shinobu Sugimura,Norikatsu Sasao. Владелец: Kioxia Corp. Дата публикации: 2021-09-23.

Method of forming fine patterns by using double patterning

Номер патента: KR101045371B1. Автор: 양현조. Владелец: 주식회사 하이닉스반도체. Дата публикации: 2011-06-30.

Method for Reducing a Minimum Line Width in a Spacer-Defined Double Patterning Process

Номер патента: US20130034962A1. Автор: Liujiang Yu. Владелец: Shanghai Huali Microelectronics Corp. Дата публикации: 2013-02-07.

Method for Optimizing a Critical Dimension for Double Patterning for NAND Flash

Номер патента: US20210020440A1. Автор: HE Li,Huang Guanqun,Ju Xiaohua. Владелец: SHANGHAI HUALI MICROELECTRONICS CORPORATION. Дата публикации: 2021-01-21.

NARROWED FEATURE FORMATION DURING A DOUBLE PATTERNING PROCESS

Номер патента: US20180323067A1. Автор: Zhang John H.,Shu Jiehui,ZHANG Xiaoqiang,Yu Xusheng. Владелец: . Дата публикации: 2018-11-08.

Mask treatment for double patterning design

Номер патента: CN103367119A. Автор: 陈殿豪,陈启平,杨景峰. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2013-10-23.

Method for forming self-aligned double pattern, and semiconductor structure

Номер патента: EP4181172A4. Автор: Zhongming Liu. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-12-27.

Fine patterning method of semiconductor device

Номер патента: KR970003884B1. Автор: Jin-Soo Han. Владелец: Hyundai Electronics Ind. Дата публикации: 1997-03-22.

Photomask structure and patterning method

Номер патента: US20240304445A1. Автор: Kao-Tun Chen,Li-Chien Wang. Владелец: Winbond Electronics Corp. Дата публикации: 2024-09-12.

METHOD OF FORMING AN ASHABLE HARD MASK AND PATTERNING METHOD

Номер патента: US20210125830A1. Автор: FANG Wei-Chuan. Владелец: . Дата публикации: 2021-04-29.

MULTI-PATTERNING METHOD AND DEVICE FORMED BY THE METHOD

Номер патента: US20150179450A1. Автор: Lee Chia-Ying,SHIEH JYU-HORNG. Владелец: . Дата публикации: 2015-06-25.

Thin film patterning method and method of manufacturing semiconductor device using the thin film patterning method

Номер патента: US20130183609A1. Автор: Sang-yoon Lee,Myung-kwan Ryu,Jong-baek Seon. Владелец: Samsung Display Co Ltd. Дата публикации: 2013-07-18.

Method of forming mask pattern, method of processing substrate, and method of fabricating element chips

Номер патента: US09905452B2. Автор: Atsushi Harikai,Mitsuru Hiroshima. Владелец: Panasonic Intellectual Property Management Co Ltd. Дата публикации: 2018-02-27.

Method of forming mask pattern, method of processing substrate, and method of fabricating element chips

Номер патента: US20170069522A1. Автор: Atsushi Harikai,Mitsuru Hiroshima. Владелец: Panasonic Intellectual Property Management Co Ltd. Дата публикации: 2017-03-09.

Methods of forming integrated circuits and multiple critical dimension self-aligned double patterning processes

Номер патента: US09431264B2. Автор: Linus Jang,Ryan Ryoung Han Kim,Young Joon MOON. Владелец: Globalfoundries Inc. Дата публикации: 2016-08-30.

RC Corner Solutions for Double Patterning Technology

Номер патента: US20130275927A1. Автор: Yi-Kan Cheng,Ke-Ying Su,Hsiao-Shu CHAO. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2013-10-17.

Double patterning method using metallic compound mask layer

Номер патента: US8313889B2. Автор: Chih-Yang Yeh,Hung Chang HSIEH,Vincent Yu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2012-11-20.

Manufacturing method of mask for double patterning and double patterning method

Номер патента: CN109917616B. Автор: 杨青. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2022-07-05.

Metal density distribution for double pattern lithography

Номер патента: WO2014085299A1. Автор: Richard Schultz,Omid Rowhani,Charles Tung. Владелец: Advanced Micro Devices, Inc.. Дата публикации: 2014-06-05.

Metal density distribution for double pattern lithography

Номер патента: EP2926364A1. Автор: Richard Schultz,Omid Rowhani,Charles Tung. Владелец: Advanced Micro Devices Inc. Дата публикации: 2015-10-07.

Critical dimension control for double patterning process

Номер патента: US09934985B2. Автор: Horng-Huei Tseng,Che-Cheng Chang,Chih-Han Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-04-03.

Improving alignment target contrast in a lithographic double patterning process

Номер патента: TW201106418A. Автор: Mircea Dusa,Manfred Gawein Tenner,Harry Sewell,Maya Angelova Doytcheva,Haren Richard Johannes Franciscus Van. Владелец: Asml Holding Nv. Дата публикации: 2011-02-16.

Litho-litho-etch double patterning (LLE-DP) methods

Номер патента: TW201113929A. Автор: Pei-Lin Huang,Yi-Ming Wang,Ying-Chung Tseng. Владелец: Nanya Technology Corp. Дата публикации: 2011-04-16.

Double mask self-aligned double patterning technology (sadpt) process

Номер патента: US20090215272A1. Автор: Lumin Li,Andrew R. Romano,S. M. Reza Sadjadi. Владелец: Lam Research Corp. Дата публикации: 2009-08-27.

METHOD OF FORMING FINE PATTERNS OF SEMICONDUCTOR DEVICE BY USING DOUBLE PATTERNING PROCESS WHICH USES ACID DIFFUSION

Номер патента: US20140004705A1. Автор: Kang Yool,Lee Suk-Joo,Yi Shi-Yong,Lee Jung-hyeon. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2014-01-02.

CRITICAL DIMENSION AND PATTERN RECOGNITION STRUCTURES FOR DEVICES MANUFACTURED USING DOUBLE PATTERNING TECHNIQUES

Номер патента: US20150050811A1. Автор: Chauhan Vikrant,Mehta Sohan,Chen Tong Qing,Srivastava Ravi,Labelle Catherine,Kelling Mark. Владелец: . Дата публикации: 2015-02-19.

METHOD FOR TREATING PHOTORESIST AND SELF-ALIGNED DOUBLE PATTERNING METHOD

Номер патента: US20220148879A1. Автор: XIA Jun,Bai Shijie. Владелец: CHANGXIN MEMORY TECHNOLOGIES, INC.. Дата публикации: 2022-05-12.

Resist pattern protection technique for double patterning application

Номер патента: US8394280B1. Автор: Ling Wang,Hai Sun,Hongping Yuan,Dujiang Wan,Xianzhong Zeng. Владелец: Western Digital Fremont LLC. Дата публикации: 2013-03-12.

Method of forming minute patterns in semiconductor device using double patterning

Номер патента: US8114778B2. Автор: Jae-Hwang Sim,Jae-Kwan Park,Sang-Yong Park,Yong-Sik Yim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2012-02-14.

Double mask self-aligned double patterning technology (sadpt) process

Номер патента: CN101971291A. Автор: 李路明,S·M·列扎·萨贾迪,安德鲁·R·罗马诺. Владелец: Lam Research Corp. Дата публикации: 2011-02-09.

Double mask self-aligned double patterning technology (SaDPT) process

Номер патента: TW200945438A. Автор: S M Reza Sadjadi,Lumin Li,Romano R Andrew. Владелец: Lam Res Corp. Дата публикации: 2009-11-01.

Double patterning method using tilt-angle deposition

Номер патента: US20130023121A1. Автор: Chwen Yu,Kai-Wen Cheng,Fei-Gwo Tsai. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2013-01-24.

Resist feature and removable spacer pitch doubling patterning method for pillar structures

Номер патента: CN102272888A. Автор: 陈永廷,S.J.拉迪甘. Владелец: SanDisk 3D LLC. Дата публикации: 2011-12-07.

Resist feature and removable spacer pitch doubling patterning method for pillar structures

Номер патента: US20100167520A1. Автор: Steven J. Radigan,Yung-Tin Chen. Владелец: SanDisk 3D LLC. Дата публикации: 2010-07-01.

Double patterning mask set and method of forming thereof

Номер патента: US20120295186A1. Автор: Shih-Ming Kuo,Te-Hsien Hsieh,Ming-Jui Chen,Cheng-Te Wang,Ping-I Hsieh,Jing-Yi Lee. Владелец: United Microelectronics Corp. Дата публикации: 2012-11-22.

Double Patterning Strategy for Contact Hole and Trench in Photolithography

Номер патента: US20130337651A1. Автор: Chen Chih-Hao,Lin Keng-Chu,Ko Chung-Chi. Владелец: Taiwan Semiconductor Manufacturing Company, Ltd.. Дата публикации: 2013-12-19.

Self-Aligned Double Patterning With Spatial Atomic Layer Deposition

Номер патента: US20220059362A1. Автор: Xia Li-Qun,LI NING,Marcus Steven D.,Nguyen Victor,TANAKA Keiichi,Balseanu Mihaela A.. Владелец: Applied Materials, Inc.. Дата публикации: 2022-02-24.

METHODS OF FABRICATING SEMICONDUCTOR DEVICES HAVING DOUBLE PATTERNING TECHNOLOGY

Номер патента: US20140154885A1. Автор: SIM Jae-hwang,Shin Jinhyun. Владелец: Samsung Electronics Co., Ltd. Дата публикации: 2014-06-05.

CRITICAL DIMENSION CONTROL FOR DOUBLE PATTERNING PROCESS

Номер патента: US20170154886A1. Автор: Chang Che-Cheng,LIN Chih-Han,Tseng Horng-Huei. Владелец: . Дата публикации: 2017-06-01.

METHOD TO INCREASE THE PROCESS WINDOW IN DOUBLE PATTERNING PROCESS

Номер патента: US20190181006A1. Автор: YANG Qing. Владелец: . Дата публикации: 2019-06-13.

Self-Aligned Double Patterning With Spatial Atomic Layer Deposition

Номер патента: US20150200110A1. Автор: Xia Li-Qun,LI NING,Marcus Steven D.,Nguyen Victor,Balseanu Mihaela,TANAKA Keiichi. Владелец: . Дата публикации: 2015-07-16.

TWO-COLOR SELF-ALIGNED DOUBLE PATTERNING (SADP) TO YIELD STATIC RANDOM ACCESS MEMORY (SRAM) AND DENSE LOGIC

Номер патента: US20190189457A1. Автор: Shao Dongbing,LIE Fee Li,Wong Robert,Xu Yongan. Владелец: . Дата публикации: 2019-06-20.

IMAGE TRANSFER USING EUV LITHOGRAPHIC STRUCTURE AND DOUBLE PATTERNING PROCESS

Номер патента: US20180204723A1. Автор: Chen Hsueh-Chung,Xu Yongan,Mignot Yann A.M.. Владелец: . Дата публикации: 2018-07-19.

IMAGE TRANSFER USING EUV LITHOGRAPHIC STRUCTURE AND DOUBLE PATTERNING PROCESS

Номер патента: US20180204724A1. Автор: Chen Hsueh-Chung,Xu Yongan,Mignot Yann A.M.. Владелец: . Дата публикации: 2018-07-19.

Critical Dimension Control for Double Patterning Process

Номер патента: US20180226265A1. Автор: Chang Che-Cheng,LIN Chih-Han,Tseng Horng-Huei. Владелец: . Дата публикации: 2018-08-09.

Double patterning process

Номер патента: US8129100B2. Автор: Jun Hatakeyama,Masaki Ohashi,Toshinobu Ishihara,Katsuya Takemura,Kazumi Noda,Mutsuo Nakashima. Владелец: Shin Etsu Chemical Co Ltd. Дата публикации: 2012-03-06.

Flash memory device using double patterning technology and method of the same

Номер патента: KR100910042B1. Автор: 이석주,여기성,조한구,고차원,이두열,곽판석. Владелец: 삼성전자주식회사. Дата публикации: 2009-07-30.

Self-aligned double patterning with spatial atomic layer deposition

Номер патента: KR102486400B1. Автор: 리-쿤 시아,스티븐 디. 마르쿠스,미하엘라 발세아누,빅터 엔구옌,닝 리,케이치 타나카. Владелец: 어플라이드 머티어리얼스, 인코포레이티드. Дата публикации: 2023-01-09.

Within-sequence metrology based process tuning for adaptive self-aligned double patterning

Номер патента: US20100009470A1. Автор: Matthew F. Davis,Lei Lian,Thorsten B. Lill. Владелец: Applied Materials Inc. Дата публикации: 2010-01-14.

Double patterning forming method

Номер патента: CN104157553A. Автор: 雷通,周海锋. Владелец: Shanghai Huali Microelectronics Corp. Дата публикации: 2014-11-19.

Flash Memory Device Using Double Patterning Technology and Method of Manufacturing the Same

Номер патента: US20100290285A1. Автор: Gi-sung Yeo,Cha-Won Koh,Doo-Youl Lee,Han-ku Cho,Suk-joo Lee,Pan-Suk Kwak. Владелец: Individual. Дата публикации: 2010-11-18.

Metal density distribution for double pattern lithography

Номер патента: EP2926364A4. Автор: Richard Schultz,Omid Rowhani,Charles Tung. Владелец: Advanced Micro Devices Inc. Дата публикации: 2016-08-03.

Method of removing a photoresist pattern, method of forming a dual polysilicon layer using the removing method and method of manufacturing a semiconductor device using the removing

Номер патента: US20070298596A1. Автор: Keum-Joo Lee,Kyoung-Chul Kim,Byoung-Yong Gwak. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2007-12-27.

Fin patterning methods for increased process margin

Номер патента: US09449880B1. Автор: Ru-Gun Liu,Wei-Liang Lin,Chun-Kuang Chen,Chih-Ming Lai,Tsai-Sheng Gau,Huan-Just Lin,Chi-Cheng Hung,Chin-Yuan Tseng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-09-20.

Patterning method using surface plasmon

Номер патента: US09436091B2. Автор: Min Kang,Yong Son,Hyun-Joo Lee,Bong-Yeon Kim,Dong-Eon Lee. Владелец: Samsung Display Co Ltd. Дата публикации: 2016-09-06.

Film patterning method

Номер патента: TWI227383B. Автор: Yoshihiro Sato,Eiichi Hoshino,Yuuichi Yamamoto,Toshikatsu Minagawa,Masahiro Uraguchi. Владелец: Fujitsu Ltd. Дата публикации: 2005-02-01.

Block patterning method enabling merged space in SRAM with heterogeneous mandrel

Номер патента: US09859125B2. Автор: Hoon Kim,Ruilong Xie,Chanro Park,Min Gyu Sung,Kwan-Yong Lim. Владелец: Globalfoundries Inc. Дата публикации: 2018-01-02.

PATTERNING METHOD, METHOD FOR PRODUCING PROCESSED SUBSTRATE, METHOD FOR PRODUCING OPTICAL COMPONENT, METHOD FOR PRODUCING CIRCUIT BOARD, AND METHOD FOR PRODUCING ELECTRONIC COMPONENT

Номер патента: US20180047581A1. Автор: Ito Toshiki,Iwashita Kazumi,Honma Takeshi,Yonezawa Shiori,Otani Tomonori. Владелец: CANON KABUSHIKI KAISHA. Дата публикации: 2018-02-15.

Method for preparing design pattern, method for manufacturing photomask, method for forming resist pattern and method for manufacturing semiconductor device

Номер патента: KR100785186B1. Автор: 미야자끼마끼,미모또기쇼오지. Владелец: 가부시끼가이샤 도시바. Дата публикации: 2007-12-11.

Feature Patterning Methods and Structures Thereof

Номер патента: US20110215479A1. Автор: Thomas Schulz,Sergei Postnikov. Владелец: Individual. Дата публикации: 2011-09-08.

Feature Patterning Methods and Structures Thereof

Номер патента: US20100123250A1. Автор: Thomas Schulz,Sergei Postnikov. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2010-05-20.

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Номер патента: US20140162457A1. Автор: Shea Kevin R.,Khurana Ranjan,Sipani Vishal,Brown William R.,Trapp Shane J.,deVillers Anton J.. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2014-06-12.

A photomask, the manufacturing method, a patterning method, and a semiconductor device manufacturing method

Номер патента: KR100798969B1. Автор: 핫토리타카시,타나카토시히코,고토야스코,사토히데토시,시라이시히로시. Владелец: 가부시키가이샤 히타치세이사쿠쇼. Дата публикации: 2008-01-28.

Method for forming pattern, method for manufacturing substrate with pattern, and method for manufacturing sintered body with pattern

Номер патента: WO2020255925A1. Автор: 不二夫 津守,和樹 徳丸,宮田　剛志. Владелец: 国立大学法人九州大学. Дата публикации: 2020-12-24.

Resin composition for forming fine patterns, method for fabricating semiconductor device using the composition and semiconductor device fabricated by the method

Номер патента: WO2008018749A1. Автор: Sang Kyun Kim,Tae Ho Kim,Chang Soo Woo,Dong Seon Uh,Sung Jae Lee,Hee Jae Kim,Sang Geun Yun,Yong Sik Yoo. Владелец: CHEIL INDUSTRIES INC.. Дата публикации: 2008-02-14.

Fin-Like Field Effect Transistor Patterning Methods for Increasing Process Margins

Номер патента: US20200013630A1. Автор: Ru-Gun Liu,Wei-Liang Lin,Hsin-Chih Chen,Shi Ning Ju,Yung-Sung Yen,Chin-Yuan Tseng,Ken-Hsien Hsieh. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-01-09.

Method of designing a layout of a pattern, method of forming a pattern using the same, and method of manufacturing a semiconductor device using the same

Номер патента: US20210117604A1. Автор: Sangwook Kim,Kyubin HAN. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-04-22.

FINE PATTERNING METHODS AND METHODS OF FABRICATING SEMICONDUCTOR DEVICES USING THE SAME

Номер патента: US20160043001A1. Автор: Kim Myeongcheol,KIM Sungbong,Kim Gyeong-seop. Владелец: . Дата публикации: 2016-02-11.

HARD MASK INCLUDING AMORPHOUS BORON NITRIDE FILM AND METHOD OF FABRICATING THE HARD MASK, AND PATTERNING METHOD USING THE HARD MASK

Номер патента: US20220181151A1. Автор: CHOI Taejin,SHIN Hyeonjin. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2022-06-09.

Electron-beam exposure method and patterning method using the same

Номер патента: KR100594225B1. Автор: 양승훈. Владелец: 삼성전자주식회사. Дата публикации: 2006-07-03.

Polymer for spin on carbon hardmask and preparation method thereof, spin on carbon hardmask composition containing the polymer and patterning method of semiconductor device using the composition

Номер патента: KR100874655B1. Автор: 이준호,김형기,박주현,임영택,김명웅. Владелец: 금호석유화학 주식회사. Дата публикации: 2008-12-17.

Freeze-less methods for self-aligned double patterning

Номер патента: US11747733B2. Автор: Michael Murphy,Charlotte Cutler. Владелец: Tokyo Electron Ltd. Дата публикации: 2023-09-05.

DOUBLE PATTERNING VIA TRIANGULAR SHAPED SIDEWALL SPACERS

Номер патента: US20140291735A1. Автор: CHOI Dae-Han,Shen Hongliang,YANG Dae Geun,HSIEH Jung Yu. Владелец: GLOBAL FOUNDRIES, Inc.. Дата публикации: 2014-10-02.

Double pattern formation method

Номер патента: JP5967083B2. Автор: 可奈子 目谷,健夫 塩谷,島　基之,基之 島. Владелец: JSR Corp. Дата публикации: 2016-08-10.

Double patterning layout design method

Номер патента: KR102224518B1. Автор: 박재호,정광옥,송태중. Владелец: 삼성전자주식회사. Дата публикации: 2021-03-08.

Method of forming double pattern

Номер патента: KR101881184B1. Автор: 가나코 메야,다케오 시오야,모토유키 시마. Владелец: 제이에스알 가부시끼가이샤. Дата публикации: 2018-07-23.

Method and system for performing lithography verification for a double-patterning process

Номер патента: KR101600647B1. Автор: 후아 송,란티안 왕,제라드 테렌스 룩-팻,제임스 피. 실리. Владелец: 시놉시스, 인크.. Дата публикации: 2016-03-07.

Apparatus and method for providing resist alignment marks in a double patterning lithographic process

Номер патента: KR101156076B1. Автор: 머시 두사,마야 안젤로바 도이트체바,리차르트 요한네스 프란시스쿠스 반 하렌,해리 스웰,로베르투스 빌헬무스 반 데르 헤이덴. Владелец: 에이에스엠엘 홀딩 엔.브이.. Дата публикации: 2012-06-21.

Freeze-free method for self-aligned double patterning

Номер патента: KR20230125841A. Автор: 샬롯 커틀러,마이클 머피. Владелец: 도쿄엘렉트론가부시키가이샤. Дата публикации: 2023-08-29.

Patterning method

Номер патента: US20100323521A1. Автор: Chien-Mao Liao,Shing-Yih Shih,Hai-Han Hung,Wei-Cheng Shiu,Ya-Chih Wang. Владелец: Nanya Technology Corp. Дата публикации: 2010-12-23.

Method for forming pattern, method for producing substrate and method for producing mold

Номер патента: TW201220359A. Автор: Tomokazu Umezawa. Владелец: Fujifilm Corp. Дата публикации: 2012-05-16.

Reversed tone patterning method for dipole incorporation for multiple threshold voltages

Номер патента: US20240282587A1. Автор: Chih-Hao Wang,Lung-Kun Chu,Jia-Ni YU,Kuo-Cheng Chiang,Chun-Fu Lu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-22.

Photoresist composition, method for forming resist pattern, method for manufacturing semiconductor device, and substrate processing device

Номер патента: US20240288768A1. Автор: Makoto Muramatsu,Seiji Nagahara,Congque DINH. Владелец: Tokyo Electron Ltd. Дата публикации: 2024-08-29.

Fine patterning method for semiconductor device

Номер патента: KR970000423B1. Автор: Young-Kwon Chon. Владелец: LG Semicon Co Ltd. Дата публикации: 1997-01-09.

Multiple Patterning Method for Semiconductor Devices

Номер патента: US20170193147A1. Автор: Ru-Gun Liu,Chih-Ming Lai,Wen-Chun Huang,Ken-Hsien Hsieh,Wen-Li Cheng,Pai-Wei Wan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-07-06.

Method for manufacturing cured product pattern, method for manufacturing processed substrate, method for manufacturing circuit board, method for manufacturing electronic component, and method for manufacturing imprint mold

Номер патента: US20200298452A1. Автор: Toshiki Ito,Tomohiro Saito,Kenichi Ueyama,Tomonori Otani,Kouhei Nagane. Владелец: Canon Inc. Дата публикации: 2020-09-24.

Method of manufacturing a cured product pattern, method of manufacturing a processed board, method of manufacturing a circuit board, method of manufacturing an electronic component, and method of manufacturing an imprint mold

Номер патента: KR102531537B1. Автор: 도시키 이토,도모노리 오타니,도모히로 사이토,겐이치 우에야마,고오헤이 나가네. Владелец: 캐논 가부시끼가이샤. Дата публикации: 2023-05-12.

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Номер патента: KR101853193B1. Автор: 나오토 니이즈마,히데노부 오야,마사요시 야마우치,다케노리 오마타,게이이치로 스즈키. Владелец: 코니카 미놀타 가부시키가이샤. Дата публикации: 2018-04-27.

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Номер патента: US20230360926A1. Автор: Chih-Hao Wang,Lung-Kun Chu,Jia-Ni YU,Kuo-Cheng Chiang,Chun-Fu Lu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-09.

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Номер патента: US20180108539A1. Автор: NAKAZUMI Makoto,NARA Kei,NISHI Yasutaka. Владелец: NIKON CORPORATION. Дата публикации: 2018-04-19.

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Номер патента: US20170207130A1. Автор: Yoon Boun,Kim Ju-Hyun,Park Se Jung,KIM Hoyoung,PARK SangHyun,Kim Sangkyun,KWON TaeYong. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2017-07-20.

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Номер патента: KR101992655B1. Автор: 아키요시 고토,미치히로 시라카와,나오히로 탄고,나오키 이노우에,케이 야마모토. Владелец: 후지필름 가부시키가이샤. Дата публикации: 2019-06-25.

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Номер патента: KR102417180B1. Автор: 김진주,문정호,전금혜,홍석구. Владелец: 삼성전자주식회사. Дата публикации: 2022-07-05.

Method for semiconductor cross pitch doubled patterning process

Номер патента: US20150056810A1. Автор: Lars Heineck,Vinay Nair. Владелец: Nanya Technology Corp. Дата публикации: 2015-02-26.

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Номер патента: US20120043646A1. Автор: Ryoung-han Kim. Владелец: Globalfoundries Inc. Дата публикации: 2012-02-23.

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Номер патента: US20210020446A1. Автор: Miller Eric,Sieg Stuart,Dechene Daniel James. Владелец: . Дата публикации: 2021-01-21.

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Номер патента: US20200098580A1. Автор: Tzeng Kuo-Chyuan,Tseng Lee-Chuan,Pan Jui-Yu,Chen Ying-Hua. Владелец: . Дата публикации: 2020-03-26.

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Номер патента: US8450833B2. Автор: Ryoung-han Kim. Владелец: Globalfoundries Inc. Дата публикации: 2013-05-28.

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Номер патента: US20240136185A1. Автор: Chih-Ching Lin. Владелец: Nanya Technology Corp. Дата публикации: 2024-04-25.

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Номер патента: US20240136186A1. Автор: Chih-Ching Lin. Владелец: Nanya Technology Corp. Дата публикации: 2024-04-25.

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Номер патента: US20090202952A1. Автор: David W. Abraham,Francois Pagette,Nicholas C.M. Fuller,Steven E. Steen. Владелец: International Business Machines Corp. Дата публикации: 2009-08-13.

Fine patterning method of semiconductor device

Номер патента: KR970009618B1. Автор: Sung-Min Hwang,Chan-Kwang Park,Yo-Han KO,Kwang-Myung Noh. Владелец: Hyundai Electronics Ind. Дата публикации: 1997-06-14.

Methods for double-patterning-compliant standard cell design

Номер патента: US09747402B2. Автор: Gwan Sin Chang,Yi-Kan Cheng,Li-Chun Tien,Yuan-Te Hou,Lee-Chung Lu,Huang-Yu Chen,Wen-Ju Yang,Fung Song Lee. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-08-29.

Double patterned stacking technique

Номер патента: US20150287709A1. Автор: Son Le,Ohsang Kwon,HariKrishna Chintarlapalli Reddy,Vijayalakshmi Ranganna. Владелец: Qualcomm Inc. Дата публикации: 2015-10-08.

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Номер патента: US8129099B2. Автор: Kazuhiro Katayama,Jun Hatakeyama,Tsunehiro Nishi,Toshinobu Ishihara,Katsuya Takemura. Владелец: Shin Etsu Chemical Co Ltd. Дата публикации: 2012-03-06.

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Номер патента: US20150095870A1. Автор: Gwan Sin Chang,Yi-Kan Cheng,Li-Chun Tien,Yuan-Te Hou,Lee-Chung Lu,Huang-Yu Chen,Wen-Ju Yang,Fung Song Lee. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2015-04-02.

Finfet formation using double patterning memorization

Номер патента: US20140141605A1. Автор: Jin Cho,Chang Seo Park,Linus Jang. Владелец: Globalfoundries Inc. Дата публикации: 2014-05-22.

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Номер патента: US20210200090A1. Автор: Wei Li,Yang Zhang,Jun Liu,Ning Liu,Bin Zhou,Yingbin HU. Владелец: Hefei Xinsheng Optoelectronics Technology Co Ltd. Дата публикации: 2021-07-01.

Compound, patterned material, semiconductor device, terminal, and patterning method

Номер патента: EP4414786A1. Автор: Yu Zhang,Lei Zhang,Di Wang,Xiaofeng YI,Qingrong DING. Владелец: Huawei Technologies Co Ltd. Дата публикации: 2024-08-14.

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Номер патента: US8420449B2. Автор: Masaaki Toda,Satoshi SAWAYANAGI. Владелец: Fuji Electric Co Ltd. Дата публикации: 2013-04-16.

Nanomaterial ribbon patterning method and nanomaterial ribbon pattern manufactured thereby

Номер патента: US11247908B2. Автор: Jae Hyun Kim,Hak Joo Lee,Kwang Seop Kim,Hyun June JUNG,Bong Kyun Jang,Se Jeong WON. Владелец: Center for Advanced Meta Materials. Дата публикации: 2022-02-15.

Compound, patterning material, semiconductor device, terminal, and patterning method

Номер патента: US20240280898A1. Автор: Yu Zhang,Lei Zhang,Di Wang,Xiaofeng YI,Qingrong DING. Владелец: Huawei Technologies Co Ltd. Дата публикации: 2024-08-22.

Nanomaterial ribbon patterning method and nanomaterial ribbon pattern manufactured thereby

Номер патента: US20200331760A1. Автор: Jae Hyun Kim,Hak Joo Lee,Kwang Seop Kim,Hyun June JUNG,Bong Kyun Jang,Se Jeong WON. Владелец: Center for Advanced Meta Materials. Дата публикации: 2020-10-22.

Highly thick spin-on-carbon hard mask composition and patterning method using same

Номер патента: US12105421B2. Автор: Seung Hyun Lee,Su Jin Lee,Seung Hun Lee,Gi Hong Kim. Владелец: Youngchang Chemical Co Ltd. Дата публикации: 2024-10-01.

Patterning method for graphene using hot-embossing imprinting

Номер патента: US09966531B2. Автор: Byung Hee Hong,Jung Hee Han. Владелец: Graphene Square Inc. Дата публикации: 2018-05-08.

Three-dimensional patterning methods and related devices

Номер патента: US09530912B2. Автор: Nathan S. Lewis,Harry A. Atwater,Michael D. Kelzenberg,Joshua M. Spurgeon,Shannon W. Boettcher,Emily L. Warren,Morgan C. PUTNAM,Daniel B. Turner-Evans. Владелец: California Institute of Technology CalTech. Дата публикации: 2016-12-27.

Method of manufacturing memory device and patterning method

Номер патента: US11968830B2. Автор: Chung-Hsuan Wang. Владелец: Winbond Electronics Corp. Дата публикации: 2024-04-23.

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Номер патента: US20170176863A1. Автор: Wei Zhang,Feng Zhang,Tingting Zhou,Bin Zhang,Jincheng GAO. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2017-06-22.

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Номер патента: US9570635B2. Автор: Tsun-Neng Yang,Wei-Yang Ma,Cheng-Dar Lee,Yu-Han Su. Владелец: Institute of Nuclear Energy Research. Дата публикации: 2017-02-14.

Semiconductor device and patterning method for plated electrode thereof

Номер патента: US20160126369A1. Автор: Tsun-Neng Yang,Wei-Yang Ma,Cheng-Dar Lee,Yu-Han Su. Владелец: Institute of Nuclear Energy Research. Дата публикации: 2016-05-05.

Nanoparticle, nanoparticle layer patterning method and related application

Номер патента: US20220169922A1. Автор: Zhuo Chen,Tieshi WANG. Владелец: Beijing BOE Technology Development Co Ltd. Дата публикации: 2022-06-02.

Laser patterning apparatus and laser patterning method

Номер патента: US20120070932A1. Автор: Masaaki Toda,Satoshi SAWAYANAGI. Владелец: Fuji Electric Co Ltd. Дата публикации: 2012-03-22.

Method of manufacturing semiconductor device including double patterning process

Номер патента: US20240130212A1. Автор: INOUE Naoki,Tsunehiro Nishi,Yonghoon MOON. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-04-18.

Self-aligned nanowire formation using double patterning

Номер патента: US09633907B2. Автор: De-Fang Chen,Ching-Feng Fu,Chun-Hung Lee,Huan-Just Lin,Chia-Ying Lee,Yu-Chan Yen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-04-25.

Two-color self-aligned double patterning (sadp) to yield static random access memory (sram) and dense logic

Номер патента: US20240258113A1. Автор: Yongan Xu,Fee Li LIE,Robert C. Wong,Dongbing Shao. Владелец: Adeia Semiconductor Solutions LLC. Дата публикации: 2024-08-01.

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Номер патента: US20190122936A1. Автор: De-Fang Chen,Ching-Feng Fu,Chun-Hung Lee,Huan-Just Lin,Chia-Ying Lee,Yu-Chan Yen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2019-04-25.

Double-pattern gate formation processing with critical dimension control

Номер патента: US20140220767A1. Автор: Xiang Hu. Владелец: Globalfoundries Inc. Дата публикации: 2014-08-07.

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Номер патента: US20240079247A1. Автор: Yongan Xu,Fee Li LIE,Robert C. Wong,Dongbing Shao. Владелец: Tessera LLC. Дата публикации: 2024-03-07.

Two-color self-aligned double patterning (SADP) to yield static random access memory (SRAM) and dense logic

Номер патента: US11699591B2. Автор: Yongan Xu,Fee Li LIE,Robert C. Wong,Dongbing Shao. Владелец: Tessera LLC. Дата публикации: 2023-07-11.

Two-color self-aligned double patterning (SADP) to yield static random access memory (SRAM) and dense logic

Номер патента: US11978639B2. Автор: Yongan Xu,Fee Li LIE,Robert C. Wong,Dongbing Shao. Владелец: Tessera LLC. Дата публикации: 2024-05-07.

Patterning resolution enhancement combining interference lithography and self-aligned double patterning techniques

Номер патента: WO2009146014A1. Автор: Kuo-Shih Liu,Rudolf Hendel,Zhilong Rao. Владелец: Applied Materials, Inc.. Дата публикации: 2009-12-03.

Method for forming fine patterns of a semiconductor device using double patterning

Номер патента: US20080090418A1. Автор: Myeong-Cheol Kim,Kyung-yub Jeon,Hak-sun Lee,Je-woo Han. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2008-04-17.

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Номер патента: US20150001687A1. Автор: ZHANG PETER,HE JEFFERY,ZHANG STEVEN. Владелец: Semiconductor Manufacturing International (Shanghai) Corporation. Дата публикации: 2015-01-01.

DOUBLE PATTERNING METHOD

Номер патента: US20150056809A1. Автор: Doris Bruce B.,Cheng Kangguo,Khakifirooz Ali,ZHANG YING. Владелец: . Дата публикации: 2015-02-26.

Hybrid Double Patterning Method for Semiconductor Manufacture

Номер патента: US20190080921A1. Автор: Lai Chih-Ming,Hsieh Ken-Hsien,Liu Ru-Gun,Cheng Wen-Li,JHENG DONG-YO. Владелец: . Дата публикации: 2019-03-14.

Hybrid Double Patterning Method for Semiconductor Manufacture

Номер патента: US20200083058A1. Автор: Lai Chih-Ming,Hsieh Ken-Hsien,Liu Ru-Gun,Cheng Wen-Li,JHENG DONG-YO. Владелец: . Дата публикации: 2020-03-12.

Hybrid Double Patterning Method for Semiconductor Manufacture

Номер патента: US20190252200A1. Автор: Lai Chih-Ming,Hsieh Ken-Hsien,Liu Ru-Gun,Cheng Wen-Li,JHENG DONG-YO. Владелец: . Дата публикации: 2019-08-15.

SELF-ALIGNED NAND FLASH SELECT-GATE WORDLINES FOR SPACER DOUBLE PATTERNING

Номер патента: US20130316537A1. Автор: FANG Shenqing,CHEN Tung-Sheng. Владелец: SPANSION LLC. Дата публикации: 2013-11-28.

DOUBLE PATTERNING LITHOGRAPHY TECHNIQUES

Номер патента: US20140017899A1. Автор: Sivakumar Swaminathan,Wallace Charles H.,Rahhal-Orabi Nadia M.,TINGEY Matthew L.,MUNASINGHE Chanaka D.. Владелец: . Дата публикации: 2014-01-16.

METHOD OF FORMING THE GATE WITH THE LELE DOUBLE PATTERN

Номер патента: US20150050801A1. Автор: HUANG JUN,LI Runling,MAO ZhiBiao,LI QuanBo,GAN ZhiFeng. Владелец: SHANGHAI HUALI MICROELECTRONICS CORPORATION. Дата публикации: 2015-02-19.

INTEGRATED CIRCUIT LAYOUT AND METHOD WITH DOUBLE PATTERNING

Номер патента: US20150056724A1. Автор: Liu Ru-Gun,Hsieh Hung-Chang,Shieh Ming-Feng,GAU Tsai-Sheng,Ku Yao-Ching. Владелец: Taiwan Semiconductor Manufacturing Company, Ltd.. Дата публикации: 2015-02-26.

METHOD FOR SEMICONDUCTOR CROSS PITCH DOUBLED PATTERNING PROCESS

Номер патента: US20150056810A1. Автор: Nair Vinay,Heineck Lars. Владелец: NANYA TECHNOLOGY CORP.. Дата публикации: 2015-02-26.

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Номер патента: US20150064912A1. Автор: Jang Linus,Moon Young Joon,Kim Ryan Ryoung Han. Владелец: GLOBALFOUNDRIES, Inc.. Дата публикации: 2015-03-05.

METAL DENSITY DISTRIBUTION FOR DOUBLE PATTERN LITHOGRAPHY

Номер патента: US20140145342A1. Автор: Schultz Richard T.,Rowhani Omid,Tung Charles P.. Владелец: Advanced Micro Devices, Inc.. Дата публикации: 2014-05-29.

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Номер патента: US20220102153A1. Автор: Miller Eric,Sieg Stuart,Dechene Daniel James. Владелец: . Дата публикации: 2022-03-31.

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Номер патента: US20200083110A1. Автор: De-Fang Chen,Ching-Feng Fu,Chun-Hung Lee,Huan-Just Lin,Chia-Ying Lee,Yu-Chan Yen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-03-12.

Self-Aligned Nanowire Formation Using Double Patterning

Номер патента: US20190122936A1. Автор: Lin Huan-Just,Lee Chia-Ying,Fu Ching-Feng,CHEN DE-FANG,LEE CHUN-HUNG,Yen Yu-Chan. Владелец: . Дата публикации: 2019-04-25.

METHOD FOR OFF-GRID ROUTING STRUCTURES UTILIZING SELF ALIGNED DOUBLE PATTERNING (SADP) TECHNOLOGY

Номер патента: US20140225270A1. Автор: Yuan Lei,Kye Jongwook,LEVINSON Harry. Владелец: GLOBALFOUNDRIES INC.. Дата публикации: 2014-08-14.

METHOD FOR FORMING SEMICONDUCTOR DEVICE STRUCTURE USING DOUBLE PATTERNING

Номер патента: US20180145145A1. Автор: Chiu Yi-Wei,Chen Po-Ju. Владелец: Taiwan Semiconductor Manufacturing Co., Ltd.. Дата публикации: 2018-05-24.

Self-Aligned Nanowire Formation Using Double Patterning

Номер патента: US20170229349A1. Автор: De-Fang Chen,Ching-Feng Fu,Chun-Hung Lee,Huan-Just Lin,Chia-Ying Lee,Yu-Chan Yen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-08-10.

TWO-COLOR SELF-ALIGNED DOUBLE PATTERNING (SADP) TO YIELD STATIC RANDOM ACCESS MEMORY (SRAM) AND DENSE LOGIC

Номер патента: US20200266072A1. Автор: Shao Dongbing,LIE Fee Li,Wong Robert,Xu Yongan. Владелец: TESSERA, INC.. Дата публикации: 2020-08-20.

Self-aligned nanowire formation using double patterning

Номер патента: US20150348848A1. Автор: De-Fang Chen,Ching-Feng Fu,Chun-Hung Lee,Huan-Just Lin,Chia-Ying Lee,Yu-Chan Yen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2015-12-03.

Selective inductive double patterning

Номер патента: TW201005823A. Автор: S M Reza Sadjadi. Владелец: Lam Res Corp. Дата публикации: 2010-02-01.

Double pattern and etch of poly with hard mask

Номер патента: US20030124847A1. Автор: Thomas Aton,Robert Soper,Theodore Houston. Владелец: Texas Instruments Inc. Дата публикации: 2003-07-03.

Direct printing and self-aligned double patterning of nanoplates

Номер патента: CN114175211A. Автор: E·米勒,S·西埃格,D·J·德切尼. Владелец: International Business Machines Corp. Дата публикации: 2022-03-11.

Method for etching metal or metal oxide by ozone water, method for smoothing surface of metal or metal oxide by ozone water, and patterning method using ozone water

Номер патента: US09797046B2. Автор: Takatoki Yamamoto,Ryuji Hatsuki. Владелец: JAPAN SCIENCE AND TECHNOLOGY AGENCY. Дата публикации: 2017-10-24.

Sidewall spacer patterning method using gas cluster ion beam

Номер патента: US20160222521A1. Автор: Noel Russell,Soo Doo Chae,Youngdon Chang,Il-seok Song. Владелец: TEL Epion Inc. Дата публикации: 2016-08-04.

Sidewall spacer patterning method using gas cluster ion beam

Номер патента: US09500946B2. Автор: Noel Russell,Soo Doo Chae,Youngdon Chang,Il-seok Song. Владелец: TEL Epion Inc. Дата публикации: 2016-11-22.

Semiconductor device, method of fabricating the same, and patterning method

Номер патента: US09984931B2. Автор: Jinwook Lee,Dohyoung Kim,Dongwoo Han,Kwang-Yong Yang,Haegeon JUNG,KyungYub JEON. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-05-29.

Methods of cutting a fine pattern, methods of forming active patterns using the same, and methods of manufacturing a semiconductor device using the same

Номер патента: US11842899B2. Автор: Hyunchul Lee,Jiseung LEE,Sanggyo Chung,Kyoungha Eom. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-12-12.

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Номер патента: US20240063024A1. Автор: Hyunchul Lee,Jiseung LEE,Sanggyo Chung,Kyoungha Eom. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-02-22.

METHODS OF CUTTING A FINE PATTERN, METHODS OF FORMING ACTIVE PATTERNS USING THE SAME, AND METHODS OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME

Номер патента: US20210217625A1. Автор: LEE Jiseung,LEE Hyunchul,Chung Sanggyo,Eom Kyoungha. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2021-07-15.

PHASE SHIFT MASK, METHOD OF FORMING ASYMMETRIC PATTERN, METHOD OF MANUFACTURING DIFFRACTION GRATING, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

Номер патента: US20140302679A1. Автор: MATSUI Shigeru,Onozuka Toshihiko,Hasegawa Norio,Ebata Yoshisada,Kakuta Kazuyuki. Владелец: HITACHI HIGH-TECHNOLOGIES CORPORATION. Дата публикации: 2014-10-09.

Semiconductor device, method of fabricating the same, and patterning method

Номер патента: US20180240710A1. Автор: Jinwook Lee,Dohyoung Kim,Dongwoo Han,Kwang-Yong Yang,Haegeon JUNG,KyungYub JEON. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-08-23.

Oxide material, patterning substrate, method of forming a pattern, method of producing an imprint transfer mold, method of producing a recording medium, imprint transfer mold, and recording medium

Номер патента: US20100003469A1. Автор: Yasuo Hosoda,Megumi Fujimura. Владелец: Pioneer Corp. Дата публикации: 2010-01-07.

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Номер патента: US20170084493A1. Автор: Lee Jinwook,KIM Dohyoung,Han Dongwoo,YANG Kwang-Yong,JUNG Haegeon,JEON KyungYub. Владелец: . Дата публикации: 2017-03-23.

MULTI-PATTERNING METHOD AND DEVICE FORMED BY THE METHOD

Номер патента: US20140193974A1. Автор: Lee Chia-Ying,SHIEH JYU-HORNG. Владелец: Taiwan Semiconductor Manufacturing Co., Ltd.. Дата публикации: 2014-07-10.

METHOD OF FORMING FINE PATTERN, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS AND RECORDING MEDIUM

Номер патента: US20160218012A1. Автор: Hirose Yoshiro,Wada Yuichi,Kanayama Kenji,Yugami Jiro,Kameda Kenji,SHIMAMOTO Satoshi,ASHIHARA Hiroshi,Kikuchi Toshiyuki. Владелец: HITACHI KOKUSAI ELECTRIC INC.. Дата публикации: 2016-07-28.

Patterning Methods, Methods of Fabricating Semiconductor Devices Using the Same, and Semiconductor Devices Fabricated Thereby

Номер патента: US20160218280A1. Автор: Jongchul Park,Jongsoon Park,Hyungjoon Kwon,lnho KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-07-28.

PATTERNING METHOD FOR FORMING STAIRCASE STRUCTURE AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE USING THE SAME

Номер патента: US20140329379A1. Автор: KIM Cheolhong,Kim Chul-Ho,LEE Jaehan,PARK Chorong. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2014-11-06.

SEMICONDUCTOR DEVICE, METHOD OF FABRICATING THE SAME, AND PATTERNING METHOD

Номер патента: US20180240710A1. Автор: Lee Jinwook,KIM Dohyoung,Han Dongwoo,YANG Kwang-Yong,JUNG Haegeon,JEON KyungYub. Владелец: . Дата публикации: 2018-08-23.

PATTERNING METHODS, METHODS OF FABRICATING SEMICONDUCTOR DEVICES USING THE SAME, AND SEMICONDUCTOR DEVICES FABRICATED THEREBY

Номер патента: US20170256709A1. Автор: Park Jongchul,Park Jongsoon,KWON HYUNGJOON,KIM lnho. Владелец: . Дата публикации: 2017-09-07.

Method of forming resist pattern, method of manufacturing semiconductor device using the same, and semiconductor device

Номер патента: JP3189773B2. Автор: 直紀 保田,健夫 石橋,利之 豊島,圭一 片山. Владелец: Mitsubishi Electric Corp. Дата публикации: 2001-07-16.

Self-aligned double patterning method, semiconductor device and manufacturing method thereof, and electronic device

Номер патента: CN107706095B. Автор: 黄永彬,杨海玩,周乾. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2020-10-16.

METHODOLOGY OF FORMING CMOS GATES ON THE SECONDARY AXIS USING DOUBLE-PATTERNING TECHNIQUE

Номер патента: US20150170971A1. Автор: JESSEN Scott William,BALDWIN Gregory Charles. Владелец: . Дата публикации: 2015-06-18.

DOUBLE-PATTERN GATE FORMATION PROCESSING WITH CRITICAL DIMENSION CONTROL

Номер патента: US20140220767A1. Автор: HU Xiang. Владелец: GLOBALFOUNDRIES INC.. Дата публикации: 2014-08-07.

Method of Forming Transistor of Semiconductor Device Using Double Patterning Technology

Номер патента: KR100876806B1. Автор: 임희열. Владелец: 주식회사 하이닉스반도체. Дата публикации: 2009-01-07.

Double patterned microcooler having alternating fin widths

Номер патента: US20230163039A1. Автор: Hosadurga Shobha,Kamal K. Sikka,Fee Li LIE,Sagarika Mukesh,Devika Sarkar Grant,Thamarai Selvi Devarajan. Владелец: International Business Machines Corp. Дата публикации: 2023-05-25.

Method of forming a conductive pattern, method of manufacturing a display substrate using the method, and display substrate

Номер патента: US9318515B2. Автор: Yong-Su Lee,Gug-Rae Jo,Dae-Young Lee,Hyung-Bin CHO. Владелец: Samsung Display Co Ltd. Дата публикации: 2016-04-19.

Semiconductor device patterning methods

Номер патента: US20240271272A1. Автор: Yong Wang,John Sudijono,Bhaskar Jyoti Bhuyan,Doreen Wei Ying Yong. Владелец: Applied Materials Inc. Дата публикации: 2024-08-15.

Method of forming a conductive pattern, method of manufacturing a display substrate using the method, and display substrate

Номер патента: US09318515B2. Автор: Yong-Su Lee,Gug-Rae Jo,Dae-Young Lee,Hyung-Bin CHO. Владелец: Samsung Display Co Ltd. Дата публикации: 2016-04-19.

Vertical device with sidewall spacer, methods of forming sidewall spacers and field effect transistors, and patterning method

Номер патента: US20070254442A1. Автор: Christoph Ludwig,Hans Lindemann,Jyoti Gupta,Dirk Manger. Владелец: Qimonda AG. Дата публикации: 2007-11-01.

Gate structure and patterning method

Номер патента: US20240234214A1. Автор: Wei-Hao Wu,Mao-Lin Huang,Lung-Kun Chu,Kuo-Cheng Chiang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-11.

Moving body apparatus apparatus for forming pattern method of forming pattern method of producing device method of producing moving body apparatus and method of driving moving body

Номер патента: KR101590645B1. Автор: 야스오 아오키,히로시 시라스,요시히코 구도. Владелец: 가부시키가이샤 니콘. Дата публикации: 2016-02-18.

Moving body apparatus, apparatus for forming pattern, method of forming pattern, method of producing device, method of producing moving body apparatus, and method of driving moving body

Номер патента: HK1136388A1. Автор: Yoshihiko Kudo,Yasuo Aoki,Hiroshi Shirasu. Владелец: Nikon Corp. Дата публикации: 2010-06-25.

Multiple gate patterning methods towards future nanosheet scaling

Номер патента: US20240096994A1. Автор: Chih-Hao Wang,Mao-Lin Huang,Lung-Kun Chu,Jia-Ni YU,Kuo-Cheng Chiang,Chun-Fu Lu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-03-21.

Semiconductor device patterning methods

Номер патента: US11987875B2. Автор: Yong Wang,John Sudijono,Bhaskar Jyoti Bhuyan,Doreen Wei Ying Yong. Владелец: Applied Materials Inc. Дата публикации: 2024-05-21.

Thin film patterning method and method of manufacturing semiconductor device using the thin film patterning method

Номер патента: US20130183609A1. Автор: Sang-yoon Lee,Myung-kwan Ryu,Jong-baek Seon. Владелец: Samsung Display Co Ltd. Дата публикации: 2013-07-18.

Method of heat treatment, method for forming wiring pattern, method for manufacturing electro-optic device, and electro-optic device and electronic apparatus

Номер патента: KR100679963B1. Автор: 도요다나오유키. Владелец: 세이코 엡슨 가부시키가이샤. Дата публикации: 2007-02-08.

Method for manufacturing layer pattern, method for manufacturing wiring, and method for manufacturing electronic equipment

Номер патента: KR100613158B1. Автор: 사쿠라다가즈아키,사카이히로후미. Владелец: 세이코 엡슨 가부시키가이샤. Дата публикации: 2006-08-17.

Method for forming recess channel trench pattern, method for fabricating recess channel transistor and recess channel transistor fabricated by the same

Номер патента: KR20050034879A. Автор: 고용선,박종철,안태혁. Владелец: 삼성전자주식회사. Дата публикации: 2005-04-15.

Spacer double patterning for lithography operations

Номер патента: US8278156B2. Автор: Christophe Pierrat. Владелец: Cadence Design Systems Inc. Дата публикации: 2012-10-02.

Method of double patterning using sacrificial structure

Номер патента: US20090311634A1. Автор: Hongyu Yue,Hieu A. Lam,Reiji Niino. Владелец: Tokyo Electron Ltd. Дата публикации: 2009-12-17.

Method of forming fine pattern of semiconductor device using double patterning technique

Номер патента: KR100817089B1. Автор: 이석주,여기성,조한구,이두열,곽판석,홍민종. Владелец: 삼성전자주식회사. Дата публикации: 2008-03-26.

Double patterning method

Номер патента: CN107731666B. Автор: 王彦,张城龙. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2020-08-07.

SYSTEM AND METHOD FOR ARBITRARY METAL SPACING FOR SELF-ALIGNED DOUBLE PATTERNING

Номер патента: US20140264894A1. Автор: TIEN Li-Chun,Chen Kuo-Ji,WU Chen-Chi. Владелец: . Дата публикации: 2014-09-18.

Using electric-field directed post-exposure bake for double patterning (D-P)

Номер патента: TW201109846A. Автор: Mark Somervell,Steven Scheer. Владелец: Tokyo Electron Ltd. Дата публикации: 2011-03-16.

Spacer double patterning for lithography operations

Номер патента: US20110012237A1. Автор: Christophe Pierrat. Владелец: Cadence Design Systems Inc. Дата публикации: 2011-01-20.

Spacer double patterning for lithography operations

Номер патента: CN101910940B. Автор: 克里斯托夫·皮埃拉. Владелец: Cadence Design Systems Inc. Дата публикации: 2013-06-05.

Self aligned litho etch process patterning method

Номер патента: US12014926B2. Автор: Ru-Gun Liu,Chih-Ming Lai,Chien-Wen Lai,Yung-Sung Yen,Shih-Chun Huang,Chih-Min HSIAO. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-06-18.

Thin-film patterning method, manufacturing method of thin-film device and manufacturing method of thin-film magnetic head

Номер патента: US20010027029A1. Автор: Akifumi Kamijima. Владелец: TDK Corp. Дата публикации: 2001-10-04.

Semiconductor device controllable electric characteristics of double patterned patterns and pattern control method thereof

Номер патента: KR100809717B1. Автор: 박준수,여기성,조한구,이지영,곽판석. Владелец: 삼성전자주식회사. Дата публикации: 2008-03-06.

Double patterning epitaxy fin

Номер патента: US20190214486A1. Автор: Effendi Leobandung. Владелец: International Business Machines Corp. Дата публикации: 2019-07-11.

Double patterning epitaxy Fin

Номер патента: US10593784B2. Автор: Effendi Leobandung. Владелец: International Business Machines Corp. Дата публикации: 2020-03-17.

Self-aligned double patterning for memory and other microelectronic devices

Номер патента: US20140191308A1. Автор: Tzu-Yen Hsieh. Владелец: SPANSION LLC. Дата публикации: 2014-07-10.

Layout checking method for advanced double patterning photolithography with multiple spacing criteria

Номер патента: US20160239599A1. Автор: Chung-Hsing Wang,Meng-Kai Hsu,Yuan-Te Hou,Chin-Chang Hsu,King-Ho Tam. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-08-18.

Method of forming photoresist patterns having fine pitch using double patterning technique

Номер патента: KR20060106104A. Автор: 김상욱,신철호,민경진,채윤숙. Владелец: 삼성전자주식회사. Дата публикации: 2006-10-12.

Methods for improving double patterning route efficiency

Номер патента: US20140327146A1. Автор: Lei Yuan,Hidekazu Yoshida,Jongwook Kye,Juhan Kim,Mahbub Rashed,Yunfei Deng. Владелец: Globalfoundries Inc. Дата публикации: 2014-11-06.

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Номер патента: US20130130467A1. Автор: Chen Yung-Tin,Radigan Steven J.. Владелец: SanDisk 3D LLC. Дата публикации: 2013-05-23.

DOUBLE PATTERNING METHOD FOR SEMICONDUCTOR DEVICES

Номер патента: US20140217505A1. Автор: LIN Chih-Han. Владелец: Taiwan Semiconductor Manufacturing Company Ltd.. Дата публикации: 2014-08-07.

Double patterning method and semiconductor structure

Номер патента: WO2023092811A1. Автор: 陈海华,侯永强. Владелец: 上海集成电路装备材料产业创新中心有限公司. Дата публикации: 2023-06-01.

Split-Layer Design for Double Patterning Lithography

Номер патента: US20120110521A1. Автор: Sani R. Nassif,Kanak B. Agarwal,Lars W. Liebmann. Владелец: International Business Machines Corp. Дата публикации: 2012-05-03.

METHOD FOR METAL CORRELATED VIA SPLIT FOR DOUBLE PATTERNING

Номер патента: US20130130410A1. Автор: Huang Wen-Chun,Liu Ru-Gun,LIN Burn Jeng,GAU Tsai-Sheng. Владелец: Taiwan Semiconductor Manufacturing Company, Ltd.. Дата публикации: 2013-05-23.

TWO-TRACK CROSS-CONNECT IN DOUBLE-PATTERNED STRUCTURE USING RECTANGULAR VIA

Номер патента: US20140035160A1. Автор: JESSEN Scott William,BLATCHFORD James Walter. Владелец: TEXAS INSTRUMENTS INCORPORATED. Дата публикации: 2014-02-06.

DOUBLE PATTERNING COMPATIBLE COLORLESS M1 ROUTE

Номер патента: US20140097892A1. Автор: Yuan Lei,Kye Jongwook,RASHED Mahbub,Wang Qinglei. Владелец: GLOBALFOUNDRIES INC.. Дата публикации: 2014-04-10.

METHOD, APPARATUS, AND SYSTEM FOR IMPROVED MEMORY CELL DESIGN HAVING UNIDIRECTIONAL LAYOUT USING SELF-ALIGNED DOUBLE PATTERNING

Номер патента: US20180040631A1. Автор: RASHED Mahbub,KIM JuHan. Владелец: GLOBALFOUNDRIES INC.. Дата публикации: 2018-02-08.

Finfet formation using double patterning memorization

Номер патента: US20140141605A1. Автор: Jin Cho,Chang Seo Park,Linus Jang. Владелец: Globalfoundries Inc. Дата публикации: 2014-05-22.

Method of Fine Line Space Resolution Lithography for Integrated Circuit Features Using Double Patterning Technology

Номер патента: US20160086887A1. Автор: Lee Chia-Ying,SHIEH JYU-HORNG. Владелец: . Дата публикации: 2016-03-24.

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Номер патента: US20140191308A1. Автор: Hsieh Tzu-Yen. Владелец: SPANSION LLC. Дата публикации: 2014-07-10.

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Номер патента: US20190189783A1. Автор: Leobandung Effendi. Владелец: . Дата публикации: 2019-06-20.

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Номер патента: US20190214486A1. Автор: Leobandung Effendi. Владелец: . Дата публикации: 2019-07-11.

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Номер патента: US20190214554A1. Автор: Li Xia,Chen Wei-Chuan. Владелец: . Дата публикации: 2019-07-11.

METHODS FOR IMPROVING DOUBLE PATTERNING ROUTE EFFICIENCY

Номер патента: US20140327146A1. Автор: Yuan Lei,Kye Jongwook,YOSHIDA Hidekazu,RASHED Mahbub,Deng Yunfei,KIM JuHan. Владелец: Globalfoundries Inc. Дата публикации: 2014-11-06.

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Номер патента: US20150287709A1. Автор: Le Son,KWON Ohsang,Chintarlapalli Reddy HariKrishna,RANGANNA Vijayalakshmi. Владелец: QUALCOMM INCORPORATED. Дата публикации: 2015-10-08.

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Номер патента: US20190348602A1. Автор: Li Xia,Chen Wei-Chuan. Владелец: . Дата публикации: 2019-11-14.

Double patterning with inline chemical critical dimension slimming

Номер патента: KR101781246B1. Автор: 샤논 더블유 던,데이비드 헤처. Владелец: 도쿄엘렉트론가부시키가이샤. Дата публикации: 2017-09-22.

Split-layer design for double patterning lithography

Номер патента: US8347240B2. Автор: Sani R. Nassif,Kanak B. Agarwal,Lars W. Liebmann. Владелец: International Business Machines Corp. Дата публикации: 2013-01-01.

Bit cell with double patterned metal layer structures

Номер патента: TW201411638A. Автор: Juhan Kim,Mahbub Rashed. Владелец: GlobalFoundries US Inc. Дата публикации: 2014-03-16.

Method and materials for double patterning

Номер патента: TW201111918A. Автор: Peng-Fei Fu,Eric Moyer,Jason Suhr. Владелец: Dow Corning. Дата публикации: 2011-04-01.

A photoresist image-forming process using double patterning

Номер патента: WO2010084372A1. Автор: MENG Li,Muthiah Thiyagarajan,Yi Cao,Sungeun Hong,Dongkwan Lee,David Mikrut. Владелец: AZ ELECTRONIC MATERIALS USA CORP.. Дата публикации: 2010-07-29.

System and method for arbitrary metal spacing for self-aligned double patterning

Номер патента: US9026973B2. Автор: Chen-Chi Wu,Kuo-Ji Chen,Li-Chun Tien. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2015-05-05.

Method and materials for double patterning

Номер патента: WO2011011140A3. Автор: Eric Scott Moyer,Peng-Fei Fu,Jason D. Suhr. Владелец: Dow Corning Corporation. Дата публикации: 2011-03-31.

Method for fabricating high density pillar structures by double patterning using positive photoresist

Номер патента: US20100219510A1. Автор: Steven Radigan,Roy E. Scheuerlein. Владелец: SanDisk 3D LLC. Дата публикации: 2010-09-02.

Method for fabricating high density pillar structures by double patterning using positive photoresist

Номер патента: CN102077346B. Автор: R·E·舒尔雷恩,S·雷迪根. Владелец: SanDisk 3D LLC. Дата публикации: 2013-05-01.

Photoresist Image-forming Process Using Double Patterning

Номер патента: US20100183851A1. Автор: MENG Li,Muthiah Thiyagarajan,Yi Cao,Sungeun Hong,Dongkwan Lee,David Mikrut. Владелец: David Mikrut. Дата публикации: 2010-07-22.

Layout checking method for advanced double patterning photolithography with multiple spacing criteria

Номер патента: US10055531B2. Автор: Chung-Hsing Wang,Meng-Kai Hsu,Yuan-Te Hou,Chin-Chang Hsu,King-Ho Tam. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-08-21.

Method and materials for double patterning

Номер патента: US8728335B2. Автор: Eric Scott Moyer,Peng-Fei Fu,Jason D. Suhr. Владелец: Dow Corning Corp. Дата публикации: 2014-05-20.

Double patterning epitaxy fin

Номер патента: US20190189783A1. Автор: Effendi Leobandung. Владелец: International Business Machines Corp. Дата публикации: 2019-06-20.

Method To Ensure Double Patterning Technology Compliance In Standard Cells

Номер патента: US20130074029A1. Автор: James Walter Blatchford. Владелец: Texas Instruments Inc. Дата публикации: 2013-03-21.

Method for developing resist, method for forming a resist pattern, method for producing a mold, and developing fluid utilized in these methods

Номер патента: US09417530B2. Автор: Toru Tsuchihashi,Tomokazu Seki,Ikuo Takano. Владелец: Fujifilm Corp. Дата публикации: 2016-08-16.

Patterning method for OLEDs

Номер патента: US09530962B2. Автор: Paul E. Burrows,Julia J. Brown,Siddharth Harikrishna Mohan. Владелец: Universal Display Corp. Дата публикации: 2016-12-27.

Composition for forming conductive pattern, method of forming conductive pattern using the same, and resin structure having conductive pattern

Номер патента: US20170096566A1. Автор: Ha Na Lee,Chee-Sung PARK,Han Nah Jeong,Eun Kyu Seong,Su Jeong Lee. Владелец: LG Chem Ltd. Дата публикации: 2017-04-06.

Method for forming wire-layout pattern, method for making semiconductor device, photoelectronic device and electronic machine

Номер патента: TW200507044A. Автор: Naoyuki Toyoda. Владелец: Seiko Epson Corp. Дата публикации: 2005-02-16.

Self-aligned patterning method by using non-conformal film and etch for flash memory and other semiconductor applications

Номер патента: US20100230743A1. Автор: Fei Wang,Calvin Gabriel,Mark Chang,Phillip Jones,Zubin Patel,Minh-Van Ngo,Alexander Nickel,Shenqing Fang,Jihwan Choi,Angela Hui. Владелец: Individual. Дата публикации: 2010-09-16.

Resin composition, dry-etching resist mask, and patterning method

Номер патента: US09777079B2. Автор: Makoto Yada,Takeshi Ibe. Владелец: DIC Corp. Дата публикации: 2017-10-03.

Patterning method, droplet discharging device and

Номер патента: TWI356661B. Автор: Hirotsuna Miura,Naoyuki Toyoda. Владелец: Seiko Epson Corp. Дата публикации: 2012-01-11.

Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method

Номер патента: TW200806746A. Автор: Tsutomu Ogihara,Motoaki Iwabuchi,Takafumi Ueda. Владелец: Shinetsu Chemical Co. Дата публикации: 2008-02-01.

Display device including substrate including patterns and patterning method of substrate

Номер патента: US20230069383A1. Автор: Sang Hoon Kim,Sung Hoon Kim,Seung Ho Kim,Seong Jin Hwang,Yu Ri Kim,Kyung-Man Kim,Da Woon Kim,Min-Hoon CHOI. Владелец: Samsung Display Co Ltd. Дата публикации: 2023-03-02.

Patterning method for preparing top-gate, bottom-contact organic field effect transistors

Номер патента: US20210036248A1. Автор: Stefan Becker,Mi Zhou,Wei Hsiang Lin,Junmin Lee,Giseok LEE. Владелец: Clap Co Ltd. Дата публикации: 2021-02-04.

Patterning method for preparing top-gate, bottom-contact organic field effect transistors

Номер патента: US20220293873A1. Автор: Stefan Becker,Mi Zhou,Wei Hsiang Lin,Junmin Lee,Giseok LEE. Владелец: Clap Co Ltd. Дата публикации: 2022-09-15.

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Номер патента: US20150008211A1. Автор: Toru Tsuchihashi,Tomokazu Seki,Ikuo Takano. Владелец: Fujifilm Corp. Дата публикации: 2015-01-08.

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Номер патента: US20200302261A1. Автор: MAEDA Yoshimitsu. Владелец: SATO HOLDINGS KABUSHIKI KAISHA. Дата публикации: 2020-09-24.

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Номер патента: JP6632340B2. Автор: 伊藤　　俊樹,伊藤　俊樹,智教 大谷,猛 本間. Владелец: Canon Inc. Дата публикации: 2020-01-22.

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Номер патента: KR101264723B1. Автор: 이상진,양준영,이정일,김정오,방정호,강영권,안유경. Владелец: 엘지디스플레이 주식회사. Дата публикации: 2013-05-15.

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Номер патента: TW201809116A. Автор: 伊藤俊樹,加藤順,本間猛. Владелец: 日商佳能股份有限公司. Дата публикации: 2018-03-16.

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Номер патента: US20070224534A1. Автор: Michiaki Iha,Hiroyuki Kanbara,Shuuichi Towata. Владелец: Murata Manufacturing Co Ltd. Дата публикации: 2007-09-27.

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Номер патента: US8847223B2. Автор: Hi-Kuk Lee,Cha-Dong KIM,Su-Yeon Sim,Sang-Hyun Yun,Jung-In Park. Владелец: Samsung Display Co Ltd. Дата публикации: 2014-09-30.

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Номер патента: US8993354B2. Автор: Kenji Kojima. Владелец: Toshiba Corp. Дата публикации: 2015-03-31.

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Номер патента: WO2013162071A1. Автор: Mitsuji Yoshibayashi. Владелец: FUJIFILM Corporation. Дата публикации: 2013-10-31.

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Номер патента: US20160336509A1. Автор: SONG YOONJONG,JEONG Daeeun,SHIN Hyunchul. Владелец: . Дата публикации: 2016-11-17.

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Номер патента: KR102027797B1. Автор: 카즈야 오오타,준이치 이토,유시 카네코,히로아키 이데이,아키히로 하라,마사유키 하라다,스구루 사메지마. Владелец: 후지필름 가부시키가이샤. Дата публикации: 2019-10-02.

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Номер патента: KR101864167B1. Автор: 카즈타카 타카하시. Владелец: 후지필름 가부시키가이샤. Дата публикации: 2018-06-04.

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Номер патента: CN101582391B. Автор: 川岛纪之. Владелец: Sony Corp. Дата публикации: 2011-04-06.

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Номер патента: JP5695799B2. Автор: 隆史 關,涼 西村,聡 増山,真林 福田. Владелец: JXTG Nippon Oil and Energy Corp. Дата публикации: 2015-04-08.

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Номер патента: KR101007932B1. Автор: 임정호,엄기상. Владелец: 세크론 주식회사. Дата публикации: 2011-01-14.

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Номер патента: CA2870426A1. Автор: Takashi Seki,Maki Fukuda,Satoshi Masuyama,Suzushi Nishimura. Владелец: JX Nippon Oil and Energy Corp. Дата публикации: 2013-10-31.

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Номер патента: KR100626911B1. Автор: 도시미츠 히라이. Владелец: 세이코 엡슨 가부시키가이샤. Дата публикации: 2006-09-22.

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Номер патента: CN101990474A. Автор: 小松晃雄. Владелец: APPLIED NANOPARTICLE LAB CORP. Дата публикации: 2011-03-23.

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Номер патента: JP4611690B2. Автор: 公隆 森尾. Владелец: Tokyo Ohka Kogyo Co Ltd. Дата публикации: 2011-01-12.

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Номер патента: TW200609677A. Автор: Kimitaka Morio. Владелец: Tokyo Ohka Kogyo Co Ltd. Дата публикации: 2006-03-16.

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Номер патента: TWI312442B. Автор: Kimitaka Morio. Владелец: Tokyo Ohka Kogyo Co Ltd. Дата публикации: 2009-07-21.

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Номер патента: US20050211981A1. Автор: Shinichi Yotsuya,Takayuki Kuwahara,Tadayoshi Ikehara. Владелец: Seiko Epson Corp. Дата публикации: 2005-09-29.

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Номер патента: US20140099741A1. Автор: Sato Takahiro,MATSUDA Yutaka. Владелец: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.. Дата публикации: 2014-04-10.

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Номер патента: US20190044069A1. Автор: KISHIMOTO Katsuhiko,NISHIDA KOSHI,YANO KOZO,SAKIO SUSUMU,TAKEI HIDEO. Владелец: HON HAI PRECISION INDUSTRY CO., LTD.. Дата публикации: 2019-02-07.

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Номер патента: US20170192355A1. Автор: Shibuya Akinori,Kato Keita,GOTO Akiyoshi,KOJIMA Masafumi,OU Keiyu. Владелец: FUJIFILM Corporation. Дата публикации: 2017-07-06.

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Номер патента: US20170194530A1. Автор: QI Yonglian,Zhang Bin,ZHOU Tingting,Xie Dini. Владелец: . Дата публикации: 2017-07-06.

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Номер патента: US20170199455A1. Автор: Shibuya Akinori,Kato Keita,GOTO Akiyoshi,KOJIMA Masafumi,OU Keiyu. Владелец: FUJIFILM Corporation. Дата публикации: 2017-07-13.

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Номер патента: US20150235938A1. Автор: Hyatt Michael D.,Yang Ming-Chuan,Sipani Vishal,Kewley David A.,Armstrong Kyle,Van Patten Michael Dean. Владелец: . Дата публикации: 2015-08-20.

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Номер патента: US20090149006A1. Автор: Jong-Young Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2009-06-11.

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Номер патента: US7682976B2. Автор: Jong-Young Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2010-03-23.

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Номер патента: KR102384908B1. Автор: 김호영,한훈,배진혜,이원준,이창규,백근주,전중익. Владелец: 삼영순화주식회사. Дата публикации: 2022-04-08.

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Номер патента: KR20170130526A. Автор: 아키요시 고토,케이타 카토. Владелец: 후지필름 가부시키가이샤. Дата публикации: 2017-11-28.

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Номер патента: KR100545028B1. Автор: 조흥렬,최낙봉. Владелец: 엘지.필립스 엘시디 주식회사. Дата публикации: 2006-01-24.

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Номер патента: KR100919636B1. Автор: 임종주. Владелец: 엘지디스플레이 주식회사. Дата публикации: 2009-09-30.

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Номер патента: KR101287091B1. Автор: 유지 하기와라,사토루 나리즈카,가즈히코 마에다,요시미 이소노,가즈노리 모리. Владелец: 샌트랄 글래스 컴퍼니 리미티드. Дата публикации: 2013-07-17.

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Номер патента: JP5899068B2. Автор: 内海　義之,義之 内海,貴弘 清水. Владелец: Tokyo Ohka Kogyo Co Ltd. Дата публикации: 2016-04-06.

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Номер патента: CN105425540A. Автор: 张斌,齐永莲,周婷婷,谢蒂旎. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2016-03-23.

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Номер патента: US8610344B2. Автор: Takahiro Sato,Yutaka Matsuda. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2013-12-17.

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Номер патента: KR100974288B1. Автор: 김기돈,정준호,박형호,이지혜,최준혁,최대근,이순원. Владелец: 한국기계연구원. Дата публикации: 2010-08-05.

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Номер патента: KR20180061093A. Автор: 조용훈,유양석. Владелец: 한국과학기술원. Дата публикации: 2018-06-07.

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Номер патента: US8012845B2. Автор: Kyu-Young Kim,Dae-Jin Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2011-09-06.

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Номер патента: US20100078644A1. Автор: Kyu-Young Kim,Dae-Jin Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2010-04-01.

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Номер патента: US20170263409A1. Автор: Pan Tony S.,Mankin Max N.,Koch Andrew T.,Lingley Andrew R.. Владелец: . Дата публикации: 2017-09-14.

Fabrication of vacuum electronic components with self-aligned double patterning lithography

Номер патента: US10483073B2. Автор: Tony S. Pan,Max N. Mankin,Andrew T. Koch,Andrew R. Lingley. Владелец: ELWHA LLC. Дата публикации: 2019-11-19.

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Номер патента: RU2568308C2. Автор: Кенджи ЙОШИДА. Владелец: Кенджи ЙОШИДА. Дата публикации: 2015-11-20.

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Номер патента: US20090230853A1. Автор: Naoyuki Kanai. Владелец: Fuji Electric Holdings Ltd. Дата публикации: 2009-09-17.

Patterning method

Номер патента: EP1374323A1. Автор: Takeo Kawase. Владелец: Cambridge University Technical Services Ltd CUTS. Дата публикации: 2004-01-02.

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Номер патента: US20040018449A1. Автор: Shuji Yamada,Takahiro Hachisu,Tadayasu Meguro. Владелец: Canon Inc. Дата публикации: 2004-01-29.

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Номер патента: US20240324107A1. Автор: Tricia Breen Carmichael,Sara S. Mechael. Владелец: UNIVERSITY OF WINDSOR. Дата публикации: 2024-09-26.

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Номер патента: US11851593B2. Автор: Zhuo Chen,Tieshi WANG. Владелец: Beijing BOE Technology Development Co Ltd. Дата публикации: 2023-12-26.

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Номер патента: US20080131816A1. Автор: Takashi Kawai,Atsushi Oda. Владелец: Yamagata Promotional Organization for Ind Tech. Дата публикации: 2008-06-05.

Patterning method of organic electroluminescent device

Номер патента: EP1928040A3. Автор: Takashi Kawai,Atsushi Oda. Владелец: Yamagata Promotional Organization for Ind Tech. Дата публикации: 2010-05-05.

Nanoparticle having ligand with changeable polarity, nanoparticle layer patterning method and related application

Номер патента: US20240059963A1. Автор: Zhuo Chen,Tieshi WANG. Владелец: Beijing BOE Technology Development Co Ltd. Дата публикации: 2024-02-22.

Aqueous developable photo-imageable composition precursors for use in photo-patterning methods

Номер патента: TW200622483A. Автор: Mark Robert Mckeever,hai-xin Yang. Владелец: Du Pont. Дата публикации: 2006-07-01.

Method and system for forming a mask pattern, method of manufacturing a semiconductor device, system forming a mask pattern on data, cell library and method of forming a photomask

Номер патента: US20050064302A1. Автор: SATOSHI Tanaka,Shoichi Inoue,Toshiya Kotani. Владелец: Toshiba Corp. Дата публикации: 2005-03-24.

Alkali metal patterning method using basic paste, Copper patterning method due to the substitution of alkali metal and Transparent film wrapped in copper wire manufacturing method

Номер патента: KR101385238B1. Автор: 허승헌,박성환,김다혜,김보민,송철규,유도형. Владелец: (주)솔라세라믹. Дата публикации: 2014-04-16.

Photosensitive resin composition, and, photosensitive element, method for forming resist pattern, method for manufacturing printed wiring board and method for manufacturing partition wall for plasma display panel using the composition

Номер патента: US20090202944A1. Автор: Takashi Kumaki,Masahiro Miyasaka. Владелец: Hitachi Chemical Co Ltd. Дата публикации: 2009-08-13.

Photosensitive paste, method for forming wiring pattern, method for producing electronic component, and electronic component

Номер патента: US20240085787A1. Автор: Isamu Miyake. Владелец: Murata Manufacturing Co Ltd. Дата публикации: 2024-03-14.

COMPOSITION FOR FORMING PROTECTIVE FILM FOR ELECTROCONDUCTIVE PATTERN, PROTECTIVE FILM FOR ELECTROCONDUCTIVE PATTERN, METHOD FOR PRODUCING PROTECTIVE FILM, AND METHOD FOR PRODUCING TRANSPARENT ELECTROCONDUCTIVE FILM

Номер патента: US20190330493A1. Автор: Yamaki Shigeru,TOBA Masahiko,Nakazawa Eri. Владелец: SHOWA DENKO K.K.. Дата публикации: 2019-10-31.

CONDUCTIVE PASTE, METHOD OF PRODUCING PATTERN, METHOD OF PRODUCING CONDUCTIVE PASTE, AND SENSOR

Номер патента: US20160358688A1. Автор: Tanabe Miharu. Владелец: . Дата публикации: 2016-12-08.

Conductive paste, method for producing pattern, method for producing conductive pattern, and sensor

Номер патента: CN105960683A. Автор: 田边美晴. Владелец: TORAY INDUSTRIES INC. Дата публикации: 2016-09-21.

Micro-patterning method, micro-pattern substrate and single chamber solid oxide fuel cell fabricated through the method

Номер патента: KR100634127B1. Автор: 안성진,문주호. Владелец: 학교법인연세대학교. Дата публикации: 2006-10-16.

Composition for forming protective film for electroconductive pattern, protective film for electroconductive pattern, method for producing protective film, and method for producing transparent electroconductive film

Номер патента: WO2018101333A1. Автор: 山木　繁,恵理 中澤,正彦 鳥羽. Владелец: 昭和電工株式会社. Дата публикации: 2018-06-07.

Routing analysis with double pattern lithography

Номер патента: US20120216157A1. Автор: Gang Chen,Jianfeng Luo. Владелец: Individual. Дата публикации: 2012-08-23.

Methods of generating circuit layouts using self-alligned double patterning (SADP) techniques

Номер патента: US09582629B2. Автор: LI YANG,Lei Yuan,Jongwook Kye. Владелец: Globalfoundries Inc. Дата публикации: 2017-02-28.

Mask correction method, mask correction device for double patterning and training method for layout machine learning model

Номер патента: US20220373877A1. Автор: Chung-Yi Chiu,Min-Cheng Yang. Владелец: United Microelectronics Corp. Дата публикации: 2022-11-24.

Mask correction method, mask correction device for double patterning and training method for layout machine learning model

Номер патента: US12147155B2. Автор: Chung-Yi Chiu,Min-Cheng Yang. Владелец: United Microelectronics Corp. Дата публикации: 2024-11-19.

Method of decomposing design layout for double patterning process

Номер патента: US09355204B2. Автор: Jeong-Hoon Lee,Sang-Wook Seo,Hye-Soo Shin. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-05-31.

Masks for double patterning photolithography

Номер патента: US20140047398A1. Автор: Carlos R. Castro-Pareja,Allan Xiao Yu Gu. Владелец: Intel Corp. Дата публикации: 2014-02-13.

Double patterning method for fine patterning

Номер патента: KR20110008495A. Автор: 심연아. Владелец: 주식회사 동부하이텍. Дата публикации: 2011-01-27.

Stitch and trim methods for double patterning compliant standard cell design

Номер патента: US20130339911A1. Автор: Chung-Hsing Wang,Huang-Yu Chen,Chin-Hsiung Hsu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2013-12-19.

Static timing analysis method and system considering capacitive coupling and double patterning mask misalignment

Номер патента: US20140068537A1. Автор: Yi-Kan Cheng,Wen-Hao Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2014-03-06.

Static timing analysis method and system considering capacitive coupling and double patterning mask misalignment

Номер патента: US20140013292A1. Автор: Yi-Kan Cheng,Wen-Hao Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2014-01-09.

Method and apparatus for determining mask layouts for a spacer-is-dielectric self-aligned double-patterning process

Номер патента: US20120137261A1. Автор: Kevin D. Lucas,Yonchan Ban. Владелец: Synopsys Inc. Дата публикации: 2012-05-31.

Hierarchical trim management for self-aligned double patterning

Номер патента: US20190179994A1. Автор: David Wolpert,Laura R. Darden. Владелец: International Business Machines Corp. Дата публикации: 2019-06-13.

Method and system for double patterning technology (DPT) odd loop visualization for an integrated circuit layout

Номер патента: US9026958B1. Автор: Henry Yu,Sanjib Ghosh,Harindranath Parameswaran. Владелец: Cadence Design Systems Inc. Дата публикации: 2015-05-05.

Patterning method of film, microfluidic device and manufacturing method thereof

Номер патента: US11731125B2. Автор: JIAN Li,Peizhi Cai,Yuelei Xiao,Hui Liao,Yue Geng,Shenkang WU. Владелец: Beijing BOE Sensor Technology Co Ltd. Дата публикации: 2023-08-22.

Photoresist composition, method for preparing the same, and patterning method

Номер патента: US11762290B2. Автор: Teng ZHANG,Kejun LU,Daeyoun Park,Fanhua HU. Владелец: Beijing Asahi Electronic Materials Co Ltd. Дата публикации: 2023-09-19.

Photoresist composition, method for preparing the same, and patterning method

Номер патента: US20210096463A1. Автор: Teng ZHANG,Kejun LU,Daeyoun Park,Fanhua HU. Владелец: Beijing Asahi Electronic Materials Co Ltd. Дата публикации: 2021-04-01.

Lithographic patterning method and system therefore

Номер патента: EP3894960A1. Автор: Jacques Cor Johan Van der Donck,Robert Wilhelm Willekers,Diederik Jan Maas,Klara Maturova,Maarten Hubertus VAN ES,Chien-Ching Wu. Владелец: Nederlandse Organisatie voor Toegepast Natuurwetenschappelijk Onderzoek TNO. Дата публикации: 2021-10-20.

Lithographic patterning method and system therefore

Номер патента: EP3667422A8. Автор: Robert Wilhelm Willekers,Diederik Jan Maas,Klara Maturova,Maarten Hubertus VAN ES,Chien-Ching Wu,Jaques Cor Johan Van Der Donck. Владелец: Nederlandse Organisatie voor Toegepast Natuurwetenschappelijk Onderzoek TNO. Дата публикации: 2020-08-05.

Microcapsule patterning method

Номер патента: US20100225994A1. Автор: Seung Youl Kang,Hey Jin Myoung,Ji Young Oh,Gi Heon Kim,Kyung Soo Suh,Chul Am KIM,In Kyu You,Seong Daok Ahn. Владелец: Electronics and Telecommunications Research Institute ETRI. Дата публикации: 2010-09-09.

Patterning method and method of manufacturing wire grid polarizer using the same

Номер патента: US09952366B2. Автор: LEI Xie,Moon Gyu LEE,Min Hyuck KANG,Eun Ae KWAK,Hyeong Gyu JANG. Владелец: Samsung Display Co Ltd. Дата публикации: 2018-04-24.

Patterning method, and template for nanoimprint and producing method thereof

Номер патента: US09841674B2. Автор: Hideaki Sakurai,Takeharu Motokawa,Machiko Suenaga,Masatoshi Terayama. Владелец: Toshiba Memory Corp. Дата публикации: 2017-12-12.

Patterning method using imprint mold, pattern structure fabricated by the method, and imprinting system

Номер патента: US09757895B2. Автор: Sunghoon Lee,Hongseok Lee,Bongsu SHIN,Jaeseung CHUNG,Dongouk KIM,Joonyong Park,Jihyun Bae,Sukgyu HAHM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-09-12.

Scarf with pattern, method and weaving machine for manufacturing the same

Номер патента: RU2247521C2. Автор: Франсиско ШПАЙХ,Кристиан КУОНИ. Владелец: Бревитекс Этаблиссман Пур Л`Эксплутасьон Де-Бревет Текстиль. Дата публикации: 2005-03-10.

Patterning method

Номер патента: US20120148810A1. Автор: Yu-Ho Chen. Владелец: Micro Star International Co Ltd. Дата публикации: 2012-06-14.

Thin-film patterning method for magnetoresistive device

Номер патента: US20090145878A1. Автор: Naoki Ohta,Kazuki Sato,Kosuke Tanaka. Владелец: TDK Corp. Дата публикации: 2009-06-11.

Web support, production method therefor, and patterning method

Номер патента: EP3741894A1. Автор: Masahiro Yoshikawa,Naoki Fujita,Megumi Taguchi,Takehiko Tatsuno. Владелец: Nippon Filcon Co Ltd. Дата публикации: 2020-11-25.

Web support, production method therefor, and patterning method

Номер патента: US20210214869A1. Автор: Masahiro Yoshikawa,Naoki Fujita,Megumi Taguchi,Takehiko Tatsuno. Владелец: Nippon Filcon Co Ltd. Дата публикации: 2021-07-15.

Lithographic patterning method

Номер патента: US11977337B2. Автор: Diederik Jan Maas,Hamed Sadeghian Marnani,Emile van Veldhoven. Владелец: Nederlandse Organisatie voor Toegepast Natuurwetenschappelijk Onderzoek TNO. Дата публикации: 2024-05-07.

One optical design pattern/method of a cost effective ir lens

Номер патента: US20180088257A1. Автор: Fujian Ding,Mark Lifshotz. Владелец: LightPath Technologies Inc. Дата публикации: 2018-03-29.

One optical design pattern/method of a cost effective ir lens

Номер патента: US20210080620A1. Автор: Fujian Ding,Mark Lifshotz. Владелец: LightPath Technologies Inc. Дата публикации: 2021-03-18.

Lithographic patterning method

Номер патента: EP3894959A1. Автор: Diederik Jan Maas,Hamed Sadeghian Marnani,Emile van Veldhoven. Владелец: Nederlandse Organisatie voor Toegepast Natuurwetenschappelijk Onderzoek TNO. Дата публикации: 2021-10-20.

Printing device, patterning method using the same, and method of fabricating a liquid crystal display device using the same

Номер патента: US20100159788A1. Автор: Chul Ho Kim,Tae Young Oh,Choon Ho Park. Владелец: LG Display Co Ltd. Дата публикации: 2010-06-24.

Mask, manufacturing method thereof, patterning method employing mask, optical filter

Номер патента: US20170269467A1. Автор: Zheng Liu,Zhichao Zhang,Shoukun WANG,Tsung Chieh KUO. Владелец: Beijing BOE Display Technology Co Ltd. Дата публикации: 2017-09-21.

Soft mold, method of manufacturing the same, and patterning method using the same

Номер патента: US7618903B2. Автор: Gee Sung Chae. Владелец: LG Display Co Ltd. Дата публикации: 2009-11-17.

Spin-on carbon hard mask composition having low evaporation loss, and patterning method using same

Номер патента: EP4343435A1. Автор: Seung Hyun Lee,Su Jin Lee,Seung Hun Lee,Gi Hong Kim. Владелец: Ycchem Co Ltd. Дата публикации: 2024-03-27.

Soft mold, method of manufacturing the same, and patterning method using the same

Номер патента: US20100048031A1. Автор: Gee Sung Chae. Владелец: Individual. Дата публикации: 2010-02-25.

Patterning method

Номер патента: EP1542073A3. Автор: Akio Misaka. Владелец: Panasonic Corp. Дата публикации: 2009-02-18.

Resist patterning method and resist material

Номер патента: US20180356731A1. Автор: Seiichi Tagawa. Владелец: Osaka University NUC. Дата публикации: 2018-12-13.

Patterning method

Номер патента: US20100072647A1. Автор: Ikuo Yoneda,Takumi Ota,Hiroshi Tokue,Shinji Mikami. Владелец: Individual. Дата публикации: 2010-03-25.

Patterning method

Номер патента: US8221827B2. Автор: Ikuo Yoneda,Takumi Ota,Hiroshi Tokue,Shinji Mikami. Владелец: Toshiba Corp. Дата публикации: 2012-07-17.

Method of double patterning and etching magnetic tunnel junction structures for spin-transfer torque mram devices

Номер патента: EP2412003A1. Автор: Chyu-Jiuh Torng,Witold Kula,Tom Zhong,Rodolfo Belen. Владелец: MagIC Technologies Inc. Дата публикации: 2012-02-01.

A method of magnetic tunnel junction array is manufactured by double patterning

Номер патента: CN108615808A. Автор: 张云森,肖荣福,麻榆阳. Владелец: Shanghai Ciyu Information Technologies Co Ltd. Дата публикации: 2018-10-02.

Patterning method for component boards

Номер патента: US09426901B2. Автор: William Lonzo Woods, Jr.,John Andrew Trelford,Thang Dahn Truong. Владелец: General Electric Co. Дата публикации: 2016-08-23.

Method for forming pattern, method for manufacturing semiconductor device and semiconductor device

Номер патента: TW200849603A. Автор: Toshio Fukuda,Kazumasa Nomoto,Akihiro Nomoto. Владелец: Sony Corp. Дата публикации: 2008-12-16.

Substrate comprising an electrical circuit pattern, method and system for providing same

Номер патента: EP3063593A1. Автор: Rob Jacob Hendriks,Edsger Constant Pieter Smits,Pim Groen,Sandeep Menon Perinchery. Владелец: Nederlandse Organisatie voor Toegepast Natuurwetenschappelijk Onderzoek TNO. Дата публикации: 2016-09-07.

Substrate comprising an electrical circuit pattern, method and system for providing same

Номер патента: US20160270236A1. Автор: Rob Jacob Hendriks,Edsger Constant Pieter Smits,Pim Groen,Sandeep Menon Perinchery. Владелец: Nederlandse Organisatie voor Toegepast Natuurwetenschappelijk Onderzoek TNO. Дата публикации: 2016-09-15.

Patterning method

Номер патента: EP1366529B1. Автор: Takeo Kawase. Владелец: Seiko Epson Corp. Дата публикации: 2013-02-13.

Composition for forming conductive pattern, method for forming conductive pattern using the same, and resin components having conductive pattern thereon

Номер патента: US09992864B2. Автор: Shin Hee Jun,Jae Hyun Kim,Cheol-Hee Park,Chee-Sung PARK,Jae Jin Kim,Han Nah Jeong,Eun Kyu Seong,Su Jeong Lee. Владелец: LG Chem Ltd. Дата публикации: 2018-06-05.

Spatial variant dependency pattern method for GPU based intra prediction in HEVC

Номер патента: US09615104B2. Автор: Julia A. Gould,Haihua Wu. Владелец: Intel Corp. Дата публикации: 2017-04-04.

High resolution advanced OLED sub-pixel circuit and patterning method

Номер патента: US12041823B2. Автор: Yu-Hsin Lin,Jungmin Lee,Chung-Chia Chen,Ji Young CHOUNG. Владелец: Applied Materials Inc. Дата публикации: 2024-07-16.

Patterning method and display device

Номер патента: EP2040318A3. Автор: Nobuhiro Nishita. Владелец: Fujifilm Corp. Дата публикации: 2012-04-25.

Photosensitive resin composition, patterning method, and electronic components

Номер патента: TWI225969B. Автор: Akihiro Sasaki,Makoto Kaji,Noriyoshi Arai,Brian C Auman,Toshiki Hagiwara. Владелец: HITACHI CHEM DUPONT MICROSYS. Дата публикации: 2005-01-01.

Photosensitive resin composition and patterning method

Номер патента: EP1087263B1. Автор: Akihiro Sasaki,Brian C. Auman,Makoto Kaji,Noriyoshi Arai,Toshiki Hagiwara. Владелец: Hitachi Chemical DuPont Microsystems Ltd. Дата публикации: 2012-07-04.

Patterning method

Номер патента: TWI289027B. Автор: Takeo Kawase. Владелец: Univ Cambridge Tech. Дата публикации: 2007-10-21.

Plate, patterning device employing the plate, and patterning method

Номер патента: TW200745795A. Автор: Ken Takahashi,Koichi Ishii,Masahiro Hosoya,Hitoshi Yagi,Mitsunaga Saito. Владелец: Toshiba Kk. Дата публикации: 2007-12-16.

Positional deviation correction pattern, method of forming positional deviation correction pattern, and image forming apparatus

Номер патента: US09817350B2. Автор: Kenji Sato,Masato Mukai,Junichi Mizawa,Yasuko Yoshikawa,Ichiro Komuro,Shuuichi Endoh,Toru OHMINE. Владелец: Ricoh Co Ltd. Дата публикации: 2017-11-14.

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Номер патента: JP4345278B2. Автор: 貴士 宮澤. Владелец: Seiko Epson Corp. Дата публикации: 2009-10-14.

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Номер патента: KR100561019B1. Автор: 다카시 미야자와. Владелец: 세이코 엡슨 가부시키가이샤. Дата публикации: 2006-03-17.

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Номер патента: JP4068970B2. Автор: 健夫 川瀬. Владелец: Cambridge University Technical Services Ltd CUTS. Дата публикации: 2008-03-26.

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Номер патента: TW200626001A. Автор: Takashi Miyazawa. Владелец: Seiko Epson Corp. Дата публикации: 2006-07-16.

Method and apparatus for configuring dmrs patterns, method and apparatus for generating dmrss, storage medium

Номер патента: US20240214151A1. Автор: Yang Liu. Владелец: Beijing Xiaomi Mobile Software Co Ltd. Дата публикации: 2024-06-27.

Method for patterning, method for forming film, patterning apparatus, film formation apparatus, electro-optic apparatus and method for manufacturing the same, electronic equipment, and electronic apparatus and method for manufacturing the same

Номер патента: US20030166311A1. Автор: Takashi Miyazawa. Владелец: Seiko Epson Corp. Дата публикации: 2003-09-04.

Method for patterning, method for forming film, patterning apparatus, film formation apparatus, electro-optic apparatus and method for manufacturing the same, electronic equipment, and electronic apparatus and method for manufacturing the same

Номер патента: EP1986472A2. Автор: Takashi Miyazawa. Владелец: Seiko Epson Corp. Дата публикации: 2008-10-29.

Nanoimprint patterning method

Номер патента: GB2541890A. Автор: Benzie Philip,Herrington Mark,Mohamad David. Владелец: Cambridge Display Technology Ltd. Дата публикации: 2017-03-08.

Method of laser induced thermal imaging, patterning method of organic layer and fabricating method of oled using that

Номер патента: KR101030028B1. Автор: 김형식,이현철,박진한,임원규,노철래. Владелец: 삼성모바일디스플레이주식회사. Дата публикации: 2011-04-20.

Patterning method, method of manufacturing organic field effect transistor, and method of manufacturing flexible printed circuit board

Номер патента: CN1853943A. Автор: 野元章裕. Владелец: Sony Corp. Дата публикации: 2006-11-01.

Patterning method, method of manufacturing organic field effect transistor, and method of manufacturing flexible printed circuit board

Номер патента: CN101388436A. Автор: 野元章裕. Владелец: Sony Corp. Дата публикации: 2009-03-18.

Photosensitive resin composition, photosensitive element using same, method for forming resist pattern, method for producing lead frame, printed wiring board, and method for producing printed wiring board

Номер патента: CN102597877A. Автор: 岩下健一,栉田昌孝. Владелец: Hitachi Chemical Co Ltd. Дата публикации: 2012-07-18.

Sound-processing system recognizing earphones for mobile terminal using sound pattern, method for recognizing mobile terminal earphones and method for processing input sound using same, method for automatically converting audio signal amplification output based on earphones/microphone set, and computer-readable recording medium therefor

Номер патента: WO2014088202A1. Автор: 김희윤,배영식,범재룡. Владелец: (주)다하미랩. Дата публикации: 2014-06-12.

Patterning method, device manufacturing method using the patterning method, and device

Номер патента: CN102067726B. Автор: 白泽信彦,谷村宁昭,藤森茂雄. Владелец: TORAY INDUSTRIES INC. Дата публикации: 2014-06-04.

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Номер патента: CN100573968C. Автор: 宫泽贵士. Владелец: Seiko Epson Corp. Дата публикации: 2009-12-23.

Patterning method and device, film forming method and device and electro-optic device and its mfg. method

Номер патента: CN1328932C. Автор: 宫泽贵士. Владелец: Seiko Epson Corp. Дата публикации: 2007-07-25.

Photosensitive composition, transfer film, method for forming patterns, method for manufacturing circuit wiring, and method for manufacturing touch panel

Номер патента: WO2023032656A1. Автор: 邦彦 児玉,圭吾 山口. Владелец: 富士フイルム株式会社. Дата публикации: 2023-03-09.

Evaporation mask, evaporation mask provided with frame, evaporation mask prepared body, method for forming vapor deposition pattern, method for manufacturing organic semiconductor element, and method for manufacturing organic el display

Номер патента: TW201833349A. Автор: 曽根康子,小幡勝也,穂刈久実子. Владелец: 日商大日本印刷股份有限公司. Дата публикации: 2018-09-16.

Photosensitive transfer material, method for producing resin pattern, method for producing circuit wiring, and method for producing touch panel

Номер патента: WO2022059418A1. Автор: 守正 佐藤,一真 両角,隆志 有冨,進二 藤本,大介 平木. Владелец: 富士フイルム株式会社. Дата публикации: 2022-03-24.

Photosensitive transfer material, method for manufacturing resin pattern, method for manufacturing circuit wiring, and method for manufacturing touch panel

Номер патента: TW202003594A. Автор: 松田知樹,両角一真. Владелец: 日商富士軟片股份有限公司. Дата публикации: 2020-01-16.

High resolution patterning method

Номер патента: EP1440181A2. Автор: Anthony William Nigel Kynaston-Pearson,William Norman QinetiQ Farnborough DAMERELL,Daniel Robert QinetiQ Farnborough JOHNSON,Greg Peter Wade QinetiQ Farnborough FIXTER,Stephen George QinetiQ Farnborough APPLETON. Владелец: Qinetiq Ltd. Дата публикации: 2004-07-28.

High resolution patterning method

Номер патента: WO2003038147A3. Автор: Daniel Robert Johnson,Anthony Willi Kynaston-Pearson,William Norman Damerell. Владелец: William Norman Damerell. Дата публикации: 2004-08-19.

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Номер патента: EP1474546A2. Автор: William Norman QinetiQ Farnborough DAMERELL,Daniel Robert QinetiQ Farnborough JOHNSON,A. W. N. QinetiQ Farnborough KYNASTON-PEARSON. Владелец: Qinetiq Ltd. Дата публикации: 2004-11-10.

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Номер патента: WO2003038147A2. Автор: Daniel Robert Johnson,William Norman Damerell,Anthony William Nigel Kynaston-Pearson. Владелец: QINETIQ LIMITED. Дата публикации: 2003-05-08.

CONDUCTIVE PATTERN, METHOD FOR FORMING CONDUCTIVE PATTERN, AND DISCONNECTION REPAIRING METHOD

Номер патента: US20210168942A1. Автор: WATANABE KIBO. Владелец: . Дата публикации: 2021-06-03.

METHOD FOR FORMING RESIST PATTERN, METHOD FOR MANUFACTURING PRINTED WIRING BOARD, PHOTOSENSITIVE RESIN COMPOSITION FOR PROJECTION EXPOSURE AND PHOTOSENSITIVE ELEMENT

Номер патента: US20170153551A1. Автор: KUME Masakazu,MUNAKATA Momoko. Владелец: . Дата публикации: 2017-06-01.

METHOD FOR DETERMINING MOIRE PATTERN, METHOD FOR SUPPRESSING MOIRE PATTERN AND CIRCUIT SYSTEM THEREOF

Номер патента: US20210201449A1. Автор: Huang Wen-Tsung,Hsiao Ching-Ju. Владелец: . Дата публикации: 2021-07-01.

CURABLE COMPOSITION FOR IMPRINTING, METHOD OF MANUFACTURING CURED PRODUCT PATTERN, METHOD OF MANUFACTURING CIRCUIT SUBSTRATE, AND CURED PRODUCT

Номер патента: US20200241410A1. Автор: Goto Yuichiro. Владелец: FUJIFILM Corporation. Дата публикации: 2020-07-30.

Method for forming resist pattern, method for manufacturing printed wiring board, photosensitive resin composition for projection exposure and photosensitive element

Номер патента: KR102368239B1. Автор: 마사카즈 쿠메,모모코 무나카타. Владелец: 쇼와덴코머티리얼즈가부시끼가이샤. Дата публикации: 2022-02-25.

Donor substrate, patterning method and device manufacturing method

Номер патента: JP5003826B2. Автор: 茂雄 藤森,寧昭 谷村,誠一郎 西村. Владелец: TORAY INDUSTRIES INC. Дата публикации: 2012-08-15.

Method for forming resist pattern, method for manufacturing printed wiring board, photosensitive resin composition for projection exposure and photosensitive element

Номер патента: KR20220028137A. Автор: 마사카즈 쿠메,모모코 무나카타. Владелец: 쇼와덴코머티리얼즈가부시끼가이샤. Дата публикации: 2022-03-08.

Patterning method for light-emitting devices

Номер патента: US8193018B2. Автор: Ronald S. Cok. Владелец: GLOBAL OLED TECHNOLOGY LLC. Дата публикации: 2012-06-05.

Method for forming resist pattern, method for manufacturing printed wiring board, photosensitive resin composition for projection exposure and photosensitive element

Номер патента: KR20210034687A. Автор: 마사카즈 쿠메,모모코 무나카타. Владелец: 쇼와덴코머티리얼즈가부시끼가이샤. Дата публикации: 2021-03-30.

Electroconductive pattern, substrate with electroconductive pattern, method for manufacturing substrate with electroconductive pattern, structure having on-surface electroconductive pattern, and method for manufacturing said structure

Номер патента: KR101906694B1. Автор: 나오토 니이즈마,히데노부 오야,마사요시 야마우치. Владелец: 코니카 미놀타 가부시키가이샤. Дата публикации: 2018-12-05.

Method for forming resist pattern, method for manufacturing printed wiring board, photosensitive resin composition for projection exposure and photosensitive element

Номер патента: KR20170010765A. Автор: 마사카즈 쿠메,모모코 무나카타. Владелец: 히타치가세이가부시끼가이샤. Дата публикации: 2017-02-01.

Substrate patterning method for use in manufacturing of liquid crystal display (LCD) device for e.g. notebook computer, involves coating pattern material into recesses on printing plate using e.g. ink-jet method, precision nozzles

Номер патента: FR2895699A1. Автор: Chul Ho Kim,Jung Jae Lee,Tae Young Oh,Hong Suk Yoo,Choon Park. Владелец: LG Philips LCD Co Ltd. Дата публикации: 2007-07-06.

Patterning method and method for manufacturing liquid crystal display device using the same

Номер патента: US20070157841A1. Автор: Jung Lee,Chul Kim,Choon Park,Hong Yoo,Tae Oh. Владелец: LG Philips LCD Co Ltd. Дата публикации: 2007-07-12.

The production method of quantum dot layer patterning method and display device

Номер патента: CN108447999A. Автор: 陈卓,梅文海,张渊明. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2018-08-24.

A photoresist image-forming process using double patterning

Номер патента: WO2009122275A1. Автор: Munirathna Padmanaban,David J. Abdallah,Ralph R. Dammel,Eric Alemy. Владелец: AZ ELECTRONIC MATERIALS USA CORP.. Дата публикации: 2009-10-08.

Multi-polygon constraint decomposition techniques for use in double patterning applications

Номер патента: US09465907B2. Автор: Ahmed Hassan,Abbas Guvenilir,David Pritchard,David E. Brown,Jason Eugene STEPHENS,Vikrant Chauhan,Nader Magdy Hindawy,Terry J. BORDELON, JR.. Владелец: Globalfoundries Inc. Дата публикации: 2016-10-11.

Method for checking and fixing double-patterning layout

Номер патента: US09594866B2. Автор: Ru-Gun Liu,Li-Chun Tien,Lee-Chung Lu,Huang-Yu Chen,Ken-Hsien Hsieh,Dio WANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-03-14.

METHODS INVOLVING PATTERN MATCHING TO IDENTIFY AND RESOLVE POTENTIAL NON-DOUBLE-PATTERNING-COMPLIANT PATTERNS IN DOUBLE PATTERNING APPLICATIONS

Номер патента: US20140245238A1. Автор: Capodieci Luigi,Wang Lynn T.,Dai Vito. Владелец: GLOBALFOUNDRIES INC.. Дата публикации: 2014-08-28.

Method for checking and fixing double-patterning layout

Номер патента: US20130080980A1. Автор: Ru-Gun Liu,Li-Chun Tien,Lee-Chung Lu,Huang-Yu Chen,Ken-Hsien Hsieh,Dio WANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2013-03-28.

Phase Shift Mask for Double Patterning and Method for Exposing Wafer Using the Same

Номер патента: US20090269679A1. Автор: Goo Min Jeong. Владелец: Hynix Semiconductor Inc. Дата публикации: 2009-10-29.

Semiconductor device manufacturing method using double patterning and mask

Номер патента: TW200919549A. Автор: Hironobu Taoka,Akemi Moniwa,Junjiro Sakai. Владелец: Renesas Tech Corp. Дата публикации: 2009-05-01.

ECC method for double pattern flash memory

Номер патента: US09760434B2. Автор: Shih-Chang Huang,Chun-Hsiung Hung,Ken-Hui Chen. Владелец: Macronix International Co Ltd. Дата публикации: 2017-09-12.

Methods of Patterning Wafers Using Self-Aligned Double Patterning Processes

Номер патента: US20150193570A1. Автор: JEONG MOON-GYU. Владелец: . Дата публикации: 2015-07-09.

Shot cartridge with double pattern

Номер патента: CA2300515A1. Автор: Walter Zanoletti,Paolino Buccelli. Владелец: Muninord di Zanoletti Walter. Дата публикации: 2000-09-16.

DOUBLE PATTERNING METHOD

Номер патента: US20140080066A1. Автор: SHIMA Motoyuki,MEYA Kanako,SHIOYA Takeo. Владелец: JSR Corporation. Дата публикации: 2014-03-20.

DOUBLE PATTERNING METHOD

Номер патента: US20160103396A1. Автор: Yu Chun-Chi,Liou En-Chiuan,Kuo Teng-Chin. Владелец: . Дата публикации: 2016-04-14.

LITHO-LITHO-ETCH DOUBLE PATTERNING METHOD

Номер патента: US20190163054A1. Автор: Wang Feng,Singh Sunil K.,Mehta Sohan S.,SHARMA VINEET,Higgins Craig D.. Владелец: . Дата публикации: 2019-05-30.

Negative tone double patterning method

Номер патента: US20100062228A1. Автор: Charles Wallace,Swaminathan Sivakumar,Paul Nyhus. Владелец: Intel Corp. Дата публикации: 2010-03-11.

METHOD FOR CHECKING AND FIXING DOUBLE-PATTERNING LAYOUT

Номер патента: US20130080980A1. Автор: Hsieh Ken-Hsien,Chen Huang-Yu,Liu Ru-Gun,TIEN Li-Chun,LU Lee-Chung,WANG Dio. Владелец: Taiwan Semiconductor Manufacturing Company, Ltd.. Дата публикации: 2013-03-28.

Determination Of Uniform Colorability Of Layout Data For A Double Patterning Manufacturing Process

Номер патента: US20130145340A1. Автор: LI Qiao. Владелец: . Дата публикации: 2013-06-06.

LAYOUT DECOMPOSITION FOR DOUBLE PATTERNING LITHOGRAPHY

Номер патента: US20130159945A1. Автор: Kahng Andrew B.,Yao Hailong. Владелец: The Regents of the University of California. Дата публикации: 2013-06-20.

STITCH AND TRIM METHODS FOR DOUBLE PATTERNING COMPLIANT STANDARD CELL DESIGN

Номер патента: US20130339911A1. Автор: Chen Huang-Yu,WANG Chung-Hsing,HSU Chin-Hsiung. Владелец: Taiwan Semiconductor Manufacturing Co., Ltd.. Дата публикации: 2013-12-19.

Static timing analysis method and system considering capacitive coupling and double patterning mask misalignment

Номер патента: US20140013292A1. Автор: Yi-Kan Cheng,Wen-Hao Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2014-01-09.

MASKS FOR DOUBLE PATTERNING PHOTOLITHOGRAPHY

Номер патента: US20140047398A1. Автор: Castro-Pareja Carlos R.,Gu Allan Xiao Yu. Владелец: . Дата публикации: 2014-02-13.

Static timing analysis method and system considering capacitive coupling and double patterning mask misalignment

Номер патента: US20140068537A1. Автор: Yi-Kan Cheng,Wen-Hao Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2014-03-06.

AZIMUTHAL CRITICAL DIMENSION NON-UNIFORMITY FOR DOUBLE PATTERNING PROCESS

Номер патента: US20200002815A1. Автор: LaVoie Adrien,Agarwal Pulkit,Kumar Ravi,PASQUALE Frank Loren. Владелец: . Дата публикации: 2020-01-02.

DOUBLE PATTERNING TECHNOLOGY (DPT) LAYOUT ROUTING

Номер патента: US20150012895A1. Автор: Chen Huang-Yu,Chen Wen-Hao,HOU Yuan-Te,Cheng Yi-Kan,WANG Chung-Hsing,Fan Fang-Yu. Владелец: . Дата публикации: 2015-01-08.

MULTI-POLYGON CONSTRAINT DECOMPOSITION TECHNIQUES FOR USE IN DOUBLE PATTERNING APPLICATIONS

Номер патента: US20160026748A1. Автор: Brown David E.,Hassan Ahmed,Hindawy Nader Magdy,Chauhan Vikrant,Stephens Jason Eugene,Pritchard David,Guvenilir Abbas,Bordelon,Jr. Terry J.. Владелец: . Дата публикации: 2016-01-28.

Preventing double patterning odd cycles

Номер патента: US20150026651A1. Автор: Jiangfeng Luo. Владелец: Synopsys Inc. Дата публикации: 2015-01-22.

HYBRID DESIGN RULE FOR DOUBLE PATTERNING

Номер патента: US20150040088A1. Автор: Huang Wen-Chun,Chen Wen-Hao,Huang Cheng-I. Владелец: Taiwan Semiconductor Manufacturing Company Limited. Дата публикации: 2015-02-05.

AUTONOMOUS PLACEMENT TO SATISFY SELF-ALIGNED DOUBLE PATTERNING CONSTRAINTS

Номер патента: US20200057836A1. Автор: Nam Gi-Joon,Xiang Hua,Ramji Shyam,Tellez Gustavo Enrique. Владелец: . Дата публикации: 2020-02-20.

Methods for Double-Patterning-Compliant Standard Cell Design

Номер патента: US20150095870A1. Автор: Chen Huang-Yu,TIEN Li-Chun,LU Lee-Chung,HOU Yuan-Te,Cheng Yi-Kan,Chang Gwan Sin,Yang Wen-Ju,Lee Fung Song. Владелец: . Дата публикации: 2015-04-02.

ECC METHOD FOR DOUBLE PATTERN FLASH MEMORY

Номер патента: US20150100852A1. Автор: Hung Chun-Hsiung,CHEN KEN-HUI,HUANG Shih-Chang. Владелец: MACRONIX INTERNATIONAL CO., LTD.. Дата публикации: 2015-04-09.

Alignment Target Contrast in a Lithographic Double Patterning Process

Номер патента: US20140192333A1. Автор: VAN HAREN Richard Johannes Franciscus,SEWELL Harry,DUSA Mircea,Tenner Manfred Gawein,Doytcheva Maya Angelova. Владелец: . Дата публикации: 2014-07-10.

SELF-ALIGNED DOUBLE PATTERNING-AWARE ROUTING IN CHIP MANUFACTURING

Номер патента: US20200104449A1. Автор: Pandey Diwesh,Tellez Gustavo E.,Gao Shaodi. Владелец: . Дата публикации: 2020-04-02.

CONSTRUCTING FILL SHAPES FOR DOUBLE-PATTERNING TECHNOLOGY

Номер патента: US20170124242A1. Автор: Sharma Himanshu,Kim Byungwook,Kashyap Virender,Khandelwal Abhishek. Владелец: . Дата публикации: 2017-05-04.

Self-aligned double patterning via enclosure design

Номер патента: US20140208285A1. Автор: Lei Yuan,Harry J. Levinson,Jongwook Kye,Jason E. Stephens. Владелец: Globalfoundries Inc. Дата публикации: 2014-07-24.

DOUBLE PATTERNING TECHNOLOGY (DPT) LAYOUT ROUTING

Номер патента: US20140215428A1. Автор: Chen Huang-Yu,Chen Wen-Hao,HOU Yuan-Te,Cheng Yi-Kan,WANG Chung-Hsing,Fan Fang-Yu. Владелец: Taiwan Semiconductor Manufacturing Company Limited. Дата публикации: 2014-07-31.

DETECTION AND REMOVAL OF SELF-ALIGNED DOUBLE PATTERNING ARTIFACTS

Номер патента: US20140245239A1. Автор: Song Hua,Du Yuelin,Luk-Pat Gerard,Miloslavsky Alexander,Painter Benjamin,Shiely James. Владелец: Synopsys, Inc.. Дата публикации: 2014-08-28.

DOUBLE PATTERNING STRATEGY FOR CONTACT HOLE AND TRENCH IN PHOTOLITHOGRAPHY

Номер патента: US20140272714A1. Автор: CHEN Chun-Kuang,Hsu Feng-Cheng,Wang Chien-Wei,Yeh Hsiao-Wei,Lin Chih-An. Владелец: Taiwan Semiconductor Manufacturing Company, Ltd.. Дата публикации: 2014-09-18.

Hierarchical trim management for self-aligned double patterning

Номер патента: US20190179994A1. Автор: David Wolpert,Laura R. Darden. Владелец: International Business Machines Corp. Дата публикации: 2019-06-13.

STITCH INSERTION FOR REDUCING COLOR DENSITY DIFFERENCES IN DOUBLE PATTERNING TECHNOLOGY (DPT)

Номер патента: US20140282301A1. Автор: Capodieci Luigi,MADHAVAN Sriram,WANG Lynn. Владелец: GLOBALFOUNDRIES INC.. Дата публикации: 2014-09-18.

RC Corner Solutions for Double Patterning Technology

Номер патента: US20140304670A1. Автор: Yi-Kan Cheng,Ke-Ying Su,Hsiao-Shu CHAO. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2014-10-09.

METHOD OF DECOMPOSING DESIGN LAYOUT FOR DOUBLE PATTERNING PROCESS

Номер патента: US20150227666A1. Автор: LEE Jeong-Hoon,SHIN Hye-Soo,Seo Sang-Wook. Владелец: . Дата публикации: 2015-08-13.

LAYOUT CHECKING METHOD FOR ADVANCED DOUBLE PATTERNING PHOTOLITHOGRAPHY WITH MULTIPLE SPACING CRITERIA

Номер патента: US20160239599A1. Автор: HOU Yuan-Te,TAM King-Ho,WANG Chung-Hsing,HSU Meng-Kai,Hsu Chin-Chang. Владелец: . Дата публикации: 2016-08-18.

METHODS OF GENERATING CIRCUIT LAYOUTS USING SELF-ALLIGNED DOUBLE PATTERNING (SADP) TECHNIQUES

Номер патента: US20150286764A1. Автор: Yang Li,Yuan Lei,Kye Jongwook. Владелец: GLOBALFOUNDRIES INC.. Дата публикации: 2015-10-08.

DOUBLE PATTERNING BY PTD AND NTD PROCESS

Номер патента: US20140377708A1. Автор: Yang Chin Cheng. Владелец: . Дата публикации: 2014-12-25.

DOUBLE PATTERNING LAYOUT DESIGN METHOD

Номер патента: US20140380256A1. Автор: Jeong Kwang-Ok,Song Tae-Joong,Park Jae-ho. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2014-12-25.

ECC METHOD FOR DOUBLE PATTERN FLASH MEMORY

Номер патента: US20150370634A1. Автор: Hung Chun-Hsiung,CHEN KEN-HUI,HUANG Shih-Chang. Владелец: MACRONIX INTERNATIONAL CO., LTD.. Дата публикации: 2015-12-24.

Grating structure design method for double pattern encryption

Номер патента: CN113805333A. Автор: 陈旭东,钟世龙. Владелец: Sun Yat Sen University. Дата публикации: 2021-12-17.

Double patterning process

Номер патента: US8247166B2. Автор: Jun Hatakeyama,Tsunehiro Nishi,Masaki Ohashi,Katsuya Takemura,Takeshi Kinsho. Владелец: Shin Etsu Chemical Co Ltd. Дата публикации: 2012-08-21.

Overlay measurement on double patterning substrate.

Номер патента: NL1036032A1. Автор: Johannes Anna Quaedackers,Eddy Cornelis Antonius Van Der Heijden,Dorothea Maria Christina Oorschot,Hieronymus Johannus Christiaan Meessen,Yin Fong Choi. Владелец: ASML Netherlands BV. Дата публикации: 2009-04-15.

Double-pattern artificial quartz stone plate and preparation method thereof

Номер патента: CN114230234A. Автор: 黄海平,罗勇,戴新,王舟. Владелец: Guangdong Zhongqi New Material Co ltd. Дата публикации: 2022-03-25.

Method, system, and program product for interactive checking for double pattern lithography violations

Номер патента: US8739095B2. Автор: Min Cao,Roland Ruehl. Владелец: Cadence Design Systems Inc. Дата публикации: 2014-05-27.

Prepairing of optical film having double pattern and film made from the same

Номер патента: KR101241117B1. Автор: 김태진,유상현,구자정,지성대,성명석. Владелец: 웅진케미칼 주식회사. Дата публикации: 2013-03-11.

staggered laser engraving equipment for processing double-pattern carpet

Номер патента: CN108581215B. Автор: 潘小杰,方泽波. Владелец: SUZHOU MIKE LASER TECHNOLOGY SERVICE Co Ltd. Дата публикации: 2020-01-31.

Method of double patterning a thin film using a developable anti-reflective coating and a developable organic planarization layer

Номер патента: US7932017B2. Автор: Shannon W. Dunn. Владелец: Tokyo Electron Ltd. Дата публикации: 2011-04-26.

Method and system for photomask assignment for double patterning technology

Номер патента: US8732628B1. Автор: Yi-Kan Cheng,Ke-Ying Su,Hsiao-Shu CHAO,Meng-Fan Wu,I-Fan Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2014-05-20.

Double patterning technology (DPT) layout routing

Номер патента: US9317650B2. Автор: Chung-Hsing Wang,Yi-Kan Cheng,Wen-Hao Chen,Yuan-Te Hou,Huang-Yu Chen,Fang-Yu Fan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-04-19.

Photoresist composition for forming a self-aligned double pattern

Номер патента: WO2011014020A2. Автор: 이재우,김재현,이정열,김한상. Владелец: 주식회사 동진쎄미켐. Дата публикации: 2011-02-03.

A jaw crusher with a swing tooth plate having a double-pattern surface

Номер патента: CN106513089A. Автор: 梁枫. Владелец: Chengdu Jiameijia Science and Technology Co Ltd. Дата публикации: 2017-03-22.

Double patterning process

Номер патента: KR101228744B1. Автор: 준 하따께야마,다께시 긴쇼,가쯔야 다께무라,츠네히로 니시,마사끼 오하시. Владелец: 신에쓰 가가꾸 고교 가부시끼가이샤. Дата публикации: 2013-02-04.

LELE double-pattern process

Номер патента: CN109696797A. Автор: 李亮,陈啸,闫观勇. Владелец: Semiconductor Manufacturing International Tianjin Corp. Дата публикации: 2019-04-30.

Method for improving photoetching mark of double patterning process

Номер патента: CN111399351A. Автор: 梁时元,权炳仁,田范焕. Владелец: Zhenxin Beijing Semiconductor Co Ltd. Дата публикации: 2020-07-10.

A kind of double patterning diffusion barrier print production device and its production technology

Номер патента: CN107813590A. Автор: 边帅,王宽宽,王图祥,谈泽. Владелец: Hefei Hanbo Star High Tech Materials Co Ltd. Дата публикации: 2018-03-20.

Method of optical proximity correction in combination with double patterning technique

Номер патента: US8701052B1. Автор: Hui-Fang Kuo,Ming-Jui Chen,Cheng-Te Wang. Владелец: United Microelectronics Corp. Дата публикации: 2014-04-15.

Double patterning hard mask for damascene perpendicular magnetic recording (pmr) writer

Номер патента: US20110086240A1. Автор: Yun-Fei Li,Xiaohai Xiang,Jinqiu Zhang,Hai Sun,Hongping Yuan,Xianzhong Zeng. Владелец: Western Digital Fremont LLC. Дата публикации: 2011-04-14.

Natively color-aware double patterning technology (DPT) compliant routing

Номер патента: US8935639B1. Автор: Ping-San Tzeng. Владелец: Atoptech Inc. Дата публикации: 2015-01-13.

Hybrid design rule for double patterning

Номер патента: US20150040088A1. Автор: Wen-Hao Chen,Wen-Chun Huang,Cheng-I Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2015-02-05.

Stitch insertion for reducing color density differences in double patterning technology (dpt)

Номер патента: US20140282301A1. Автор: Sriram Madhavan,Luigi Capodieci,Lynn Wang. Владелец: Globalfoundries Inc. Дата публикации: 2014-09-18.

A photoresist image-forming process using double patterning

Номер патента: TW200949461A. Автор: Munirathna Padmanaban,David Abdallah,Ralph R Dammel,Eric Alemy. Владелец: Az Electronic Materials Usa. Дата публикации: 2009-12-01.

Multiple patterning method and system for implementing the method

Номер патента: US20200074038A1. Автор: Chung-Hsing Wang,Yen-Hung Lin,Yuan-Te Hou. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-03-05.

Method for forming pattern, method for manufacturing ornament, method for manufacturing belt for wristwatch, method for manufacturing structure for mounting wiring, method for manufacturing semiconductor device, and method for manufacturing printed circuit board

Номер патента: US10604859B2. Автор: Takuya Miyakawa. Владелец: Seiko Epson Corp. Дата публикации: 2020-03-31.

Method for forming pattern, method for manufacturing ornament, method for manufacturing belt for wristwatch, method for manufacturing structure for mounting wiring, method for manufacturing semiconductor device, and method for manufacturing printed circuit board

Номер патента: US20180087169A1. Автор: Takuya Miyakawa. Владелец: Seiko Epson Corp. Дата публикации: 2018-03-29.

Printing method, test pattern, method of producing test pattern, and printing apparatus

Номер патента: US20090179980A1. Автор: Hirokazu Nunokawa. Владелец: Seiko Epson Corp. Дата публикации: 2009-07-16.

Method of forming mask pattern, method of forming thin film pattern and method of forming magnetoresistive element

Номер патента: US20090294403A1. Автор: Hideyuki Yatsu,Akifumi Kamijima,Hitoshi Hatate. Владелец: TDK Corp. Дата публикации: 2009-12-03.

Method of searching for integrated multilingual consonant pattern, method of creating character input unit for inputting consonants, and apparatus for the same

Номер патента: US09824139B2. Автор: Inkeon LIM,Hosun WOO. Владелец: Neonberry Inc. Дата публикации: 2017-11-21.

Training method for learning device, method for designing design pattern, method for manufacturing laminate, and design device for design pattern

Номер патента: EP4265417A1. Автор: Akio Fukuda. Владелец: Mitsubishi Heavy Industries Ltd. Дата публикации: 2023-10-25.

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Номер патента: US20170326583A1. Автор: Toshiki Ito,Yoshimasa Araki,Kazumi Iwashita. Владелец: Canon Inc. Дата публикации: 2017-11-16.

Patterning method using mask and manufacturing method for composite type thin film magnetic head using the patterning method

Номер патента: US20010019035A1. Автор: Tetsuya Mino,Toru Inoue,Koji Matsukuma,Yasufumi Uno. Владелец: TDK Corp. Дата публикации: 2001-09-06.

Training method for learning device, method for designing design pattern, method for manufacturing laminate, and design device for design pattern

Номер патента: EP4265417A4. Автор: Akio Fukuda. Владелец: Mitsubishi Heavy Industries Ltd. Дата публикации: 2024-07-03.

Blanket for a printing roll, method of manufacturing the same, patterning method using the same, and method of manufacturing liquid crystal display device

Номер патента: US7790349B2. Автор: Jin Wuk Kim. Владелец: LG Display Co Ltd. Дата публикации: 2010-09-07.

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Номер патента: US20070238051A1. Автор: Jin Wuk Kim. Владелец: LG Philips LCD Co Ltd. Дата публикации: 2007-10-11.

Method for forming negative pattern, method for producing electronic device, electronic device and actinic ray-sensitive or radiation-sensitive resin composition

Номер патента: WO2013172466A1. Автор: Kei Yamamoto,Hidenori Takahashi,Shuhei Yamaguchi,Fumihiro Yoshino,Junichi Itou. Владелец: FUJIFILM Corporation. Дата публикации: 2013-11-21.

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Номер патента: WO2024165463A1. Автор: Shoji Kuwabara,Yoshio Nojima,Hiroshi Hitokawa. Владелец: Merck Patent GmBH. Дата публикации: 2024-08-15.

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Номер патента: US09789704B2. Автор: Hiroshi Taniuchi. Владелец: Canon Inc. Дата публикации: 2017-10-17.

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Номер патента: US20210317268A1. Автор: Yoshio Kawai,Katsuya Takemura,Dmitry Zubarev,Masashi Iio,Hiroyuki Urano,Kazuya HONDA. Владелец: Shin Etsu Chemical Co Ltd. Дата публикации: 2021-10-14.

Quarter wave plate having meta-patterns, method of manufacturing the quarter wave plate, and detection apparatus having the quarter wave plate

Номер патента: US20200271843A1. Автор: Younggeun ROH,Yeonsang Park,Seungwan Cho,Unjeong KIM,Hyunyong CHOI,Chihun IN. Владелец: Industry Academic Cooperation Foundation of Yonsei University. Дата публикации: 2020-08-27.

Actinic-ray-sensitive or radiation-sensitive resin composition, actinic-ray-sensitive or radiation-sensitive film, method for forming pattern, method for producing electronic device, compound, and resin

Номер патента: EP4282886A4. Автор: Tsutomu Yoshimura,Akiyoshi Goto,Masafumi KOJIMA,Yuma Kurumisawa. Владелец: Fujifilm Corp. Дата публикации: 2024-07-31.

Accoustic context recognition using local binary pattern method and apparatus

Номер патента: US10635983B2. Автор: Nicholas Evans,Laurent Pilati,Ludovick Lepauloux,Daniele Battaglino. Владелец: Goodix Technology Hong Kong Co Ltd. Дата публикации: 2020-04-28.

Negative tone-development resist composition for forming guide pattern, method of forming guide pattern, and method of forming pattern of layer containing block copolymer

Номер патента: TW201232168A. Автор: Takahiro Dazai,Takahiro Senzaki,Ken Miyagi,Shigenori Fujikawa,Harumi Hayakawa,Mari Koizumi. Владелец: Tokyo Ohka Kogyo Co Ltd. Дата публикации: 2012-08-01.

Holographic Reticle and Patterning Method

Номер патента: US20120295185A1. Автор: Chin-Hsiang Lin,Sheng-Chi Chin,Chun-Kuang Chen,Chung-Hsing Chang,Wen-Chuan Wang,Shih-Ming Chang,Chi-Lun Lu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2012-11-22.

Method for forming ejection-test pattern, method for testing ejection, printing apparatus, computer-readable medium, and printing system

Номер патента: US20080150980A1. Автор: Hironori Endo. Владелец: Seiko Epson Corp. Дата публикации: 2008-06-26.

Resist composition, method for forming resist pattern, method for producing compounds, intermediate, and compounds

Номер патента: US20240295812A1. Автор: Seiji Todoroki,Takuya Ikeda,Hiroki Kato,Tetsuya Matsushita,Junichi Miyakawa,KhanhTin NGUYEN. Владелец: Tokyo Ohka Kogyo Co Ltd. Дата публикации: 2024-09-05.

Resist underlayer coating film forming composition and patterning method by using the same

Номер патента: TW201019049A. Автор: Rikimaru Sakamoto,Tomohisa Ishida,Yoshiomi Hiroi. Владелец: Nissan Chemical Ind Ltd. Дата публикации: 2010-05-16.

Radiation based patterning methods

Номер патента: US11988961B2. Автор: Douglas A. Keszler,Jason K. Stowers,Alan J. Telecky,Andrew Grenville. Владелец: Inpria Corp. Дата публикации: 2024-05-21.

Curable composition for imprints, patterning method and pattern

Номер патента: US20100009138A1. Автор: Akinori Fujita,Kunihiko Kodama. Владелец: Fujifilm Corp. Дата публикации: 2010-01-14.

Holographic patterning method and tool employing prism coupling

Номер патента: WO1999059035A1. Автор: Adam F. Kelsey,Douglas C. Hobbs,Bruce D. Macleod. Владелец: Optical Switch Corporation. Дата публикации: 1999-11-18.

Photoresist compositions and patterning method

Номер патента: TW581938B. Автор: Satoshi Watanabe,Kenji Koizumi,Tatsushi Kaneko,Yoshitaka Yanagi. Владелец: Shinetsu Chemical Co. Дата публикации: 2004-04-01.

Patterning method for a covering material by using a high-power exciting beam

Номер патента: TW200942408A. Автор: Chung-Chih Feng,I-Peng Yao,Yung-Chang Hung,Chun-Ta Wang,Wei-Te Liu. Владелец: San Fang Chemical Industry Co. Дата публикации: 2009-10-16.

Radiation based patterning methods

Номер патента: US20230305390A1. Автор: Douglas A. Keszler,Jason K. Stowers,Alan J. Telecky,Andrew Grenville. Владелец: Inpria Corp. Дата публикации: 2023-09-28.

Holographic patterning method and tool employing prism coupling

Номер патента: EP1086406A1. Автор: Adam F. Kelsey,Douglas C. Hobbs,Bruce D. Macleod. Владелец: Optical Switch Corp. Дата публикации: 2001-03-28.

Hydrogenated ring-opening metathesis polymer, resist composition comprising the same and patterning method

Номер патента: TW200815495A. Автор: Tadahiro Sunaga,Tomohiro Kobayashi,Takeshi Kinsho,Yuichi Okawa. Владелец: Shinetsu Chemical Co. Дата публикации: 2008-04-01.

[half-tone phase shift mask and patterning method using thereof]

Номер патента: US20040253522A1. Автор: Jun-Cheng Lai. Владелец: Individual. Дата публикации: 2004-12-16.

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Номер патента: US20090226766A1. Автор: Mineo Moribe,Takahiro Umada,Yasuo Hosoda,Kazunobu Hashimoto. Владелец: Pioneer Corp. Дата публикации: 2009-09-10.

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Номер патента: US09738062B2. Автор: Manfred Buck,Piotr Cyganik. Владелец: University of St Andrews. Дата публикации: 2017-08-22.

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Номер патента: US20220075267A1. Автор: Sakai Kazunori,SERIZAWA Ryuichi,OOTSUBO Yuusuke,OZAKI Yuuki. Владелец: JSR Corporation. Дата публикации: 2022-03-10.

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Номер патента: US20180087169A1. Автор: Miyakawa Takuya. Владелец: . Дата публикации: 2018-03-29.

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Номер патента: WO2017170624A1. Автор: 伊藤　俊樹,千葉啓子,ニャーズ クスナトディノフ,ウェイジュン リウ,ブライアン ティモシー スタコウィアック. Владелец: キヤノン株式会社. Дата публикации: 2017-10-05.

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Номер патента: US20240083136A1. Автор: Akio Fukuda. Владелец: Mitsubishi Heavy Industries Ltd. Дата публикации: 2024-03-14.

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Номер патента: US20150008211A1. Автор: Seki Tomokazu,TSUCHIHASHI Toru,TAKANO Ikuo. Владелец: FUJIFILM Corporation. Дата публикации: 2015-01-08.

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Номер патента: US20210026240A1. Автор: NAKAMURA Shoichi,NARA Yuki,OKAWARA Takahiro,OSADA Shuichiro. Владелец: FUJIFILM Corporation. Дата публикации: 2021-01-28.

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Номер патента: US20170326583A1. Автор: Ito Toshiki,Iwashita Kazumi,Araki Yoshimasa. Владелец: CANON KABUSHIKI KAISHA. Дата публикации: 2017-11-16.

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Номер патента: EP3348542A1. Автор: Takashi Sato,Masatoshi Echigo,Takumi TOIDA,Youko SHIMIZU,Takashi Makinoshima. Владелец: Mitsubishi Gas Chemical Co Inc. Дата публикации: 2018-07-18.

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Номер патента: WO2005036269A1. Автор: Haruaki Sakurai,Kouichi Abe. Владелец: HITACHI CHEMICAL CO., LTD.. Дата публикации: 2005-04-21.

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Номер патента: EP3348542A4. Автор: Takashi Sato,Masatoshi Echigo,Takumi TOIDA,Youko SHIMIZU,Takashi Makinoshima. Владелец: Mitsubishi Gas Chemical Co Inc. Дата публикации: 2019-04-03.

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Номер патента: TW202120462A. Автор: 牧野嶋高史,越後雅敏,大松禎,片岡健太郎,松本正裕,新美結士. Владелец: 日商三菱瓦斯化學股份有限公司. Дата публикации: 2021-06-01.

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Номер патента: WO2016067525A1. Автор: Toshiki Ito,Kazumi Sakamoto,Yoshimasa Araki. Владелец: CANON KABUSHIKI KAISHA. Дата публикации: 2016-05-06.

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Номер патента: US20170100716A1. Автор: Long Chen,Jong G. Ok,Lingjie J. Guo,Ashwin Panday. Владелец: University of Michigan. Дата публикации: 2017-04-13.

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Номер патента: US20240043281A1. Автор: HONG XU,Xiang-Ming He,Xiao-Lin WANG. Владелец: Beijing Vfortune New Energy Power Technology Development Co Ltd. Дата публикации: 2024-02-08.

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Номер патента: US20230086850A1. Автор: Koji Asakawa,Shinobu Sugimura,Norikatsu Sasao. Владелец: Kioxia Corp. Дата публикации: 2023-03-23.

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Номер патента: US20130213931A1. Автор: UMEZAWA Tomokazu. Владелец: FUJIFILM Corporation. Дата публикации: 2013-08-22.

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Номер патента: US20140051016A1. Автор: CHIOU Tsann-Bim,DUSA Mircea,CHEN Alek Chi-Heng. Владелец: ASML Netherlands B.V.. Дата публикации: 2014-02-20.

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Номер патента: US20140140629A1. Автор: Tsai Wei-Ting,TAI Shen-Chuan,CHEN Zih-Siou. Владелец: NATIONAL CHENG KUNG UNIVERSITY. Дата публикации: 2014-05-22.

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Номер патента: US20150129543A1. Автор: Yamamoto Takatoki,Hatsuki Ryuji. Владелец: JAPAN SCIENCE AND TECHNOLOGY AGENCY. Дата публикации: 2015-05-14.

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Номер патента: US20180217505A1. Автор: MATSUURA Seiji. Владелец: RENESAS ELECTRONICS CORPORATION. Дата публикации: 2018-08-02.

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Номер патента: US20200254807A1. Автор: Leibenguth Joseph,Carre Maxime,JOURLIN Michel,BOUABDELLAH Mohamed. Владелец: . Дата публикации: 2020-08-13.

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Номер патента: KR101013678B1. Автор: 마사히로 미야사카,타카시 쿠마키. Владелец: 히다치 가세고교 가부시끼가이샤. Дата публикации: 2011-02-10.

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Номер патента: KR102253191B1. Автор: 가즈키 다카하시,지로 히키다,기미타카 모리오. Владелец: 도오꾜오까고오교 가부시끼가이샤. Дата публикации: 2021-05-17.

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Номер патента: WO2020218599A1. Автор: 越後　雅敏,佐藤　隆. Владелец: 三菱瓦斯化学株式会社. Дата публикации: 2020-10-29.

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Номер патента: US20050239953A1. Автор: Haruaki Sakurai,Koichi Abe. Владелец: Hitachi Chemical Co Ltd. Дата публикации: 2005-10-27.

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Номер патента: US8476170B2. Автор: Tomoko Ojima. Владелец: Toshiba Corp. Дата публикации: 2013-07-02.

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Номер патента: KR102523720B1. Автор: 가츠야 다케무라,요시오 가와이,마사시 이이오,히로유키 우라노,가즈야 혼다,드미트리 주바레브. Владелец: 신에쓰 가가꾸 고교 가부시끼가이샤. Дата публикации: 2023-04-19.

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Номер патента: US5620816A. Автор: Giang T. Dao. Владелец: Intel Corp. Дата публикации: 1997-04-15.

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Номер патента: US20030018943A1. Автор: Satoshi Akutagawa,Yoshimasa Iiduka. Владелец: Fujitsu Ltd. Дата публикации: 2003-01-23.

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Номер патента: JP3818188B2. Автор: 慶一 佐藤,聡史 上島. Владелец: TDK Corp. Дата публикации: 2006-09-06.

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Номер патента: USRE48815E1. Автор: Ikuo Yoneda,Ryoichi Inanami,Hiroshi Tokue. Владелец: Kioxia Corp. Дата публикации: 2021-11-09.

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Номер патента: KR20230091343A. Автор: 권미진,양승훈,이영엽. Владелец: 삼성전자주식회사. Дата публикации: 2023-06-23.

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Номер патента: KR100542755B1. Автор: 이기영,박상규,김창현,홍문표,김영길,최승권,노윤형,서영애,류철,양성일. Владелец: 한국전자통신연구원. Дата публикации: 2006-01-20.

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Номер патента: US20010019036A1. Автор: Akifumi Kamijima. Владелец: TDK Corp. Дата публикации: 2001-09-06.

Cyclic stereophonic sound pattern method and apparatus for reading improvement

Номер патента: CA1289356C. Автор: Stephen O. Behunin. Владелец: Individual. Дата публикации: 1991-09-24.

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Номер патента: CN101680984A. Автор: 冈部孝太郎,阿出川丰. Владелец: Fujifilm Corp. Дата публикации: 2010-03-24.

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Номер патента: US20070243475A1. Автор: Tetsuya Matsuyama,Fumihiko Mizukami,Hiroshi Funada. Владелец: Individual. Дата публикации: 2007-10-18.

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Номер патента: TW200606594A. Автор: Shinichi Ito,Daisuke Kawamura. Владелец: Toshiba Kk. Дата публикации: 2006-02-16.

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Номер патента: CN113056373A. Автор: 两角一真,藤本进二,海鉾洋行. Владелец: Fujifilm Corp. Дата публикации: 2021-06-29.

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Номер патента: US20060097399A1. Автор: Junichi Wada,Hisashi Kaneko,Noriaki Matsunaga,Takeshi Nishioka,Kazuyuki Higashi,Kenji Yoshida,Masaaki Hatano,Motoya Okazaki,Takeshi Fujimaki. Владелец: Individual. Дата публикации: 2006-05-11.

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Номер патента: US20130249918A1. Автор: SATOSHI Tanaka,Masato Saito,Shigeki Nojima,Yoko Takekawa. Владелец: Toshiba Corp. Дата публикации: 2013-09-26.

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Номер патента: US20090035705A1. Автор: Shinichi Ito. Владелец: Individual. Дата публикации: 2009-02-05.

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Номер патента: US20150232806A1. Автор: Kyung Seop KIM,Dong Geun Jung,Chang Rok Choi. Владелец: Sungkyunkwan University Foundation For Corporate Collaboration. Дата публикации: 2015-08-20.

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Номер патента: US20130249918A1. Автор: SATOSHI Tanaka,Masato Saito,Shigeki Nojima,Yoko Takekawa. Владелец: Toshiba Corp. Дата публикации: 2013-09-26.

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Номер патента: US20180081277A1. Автор: INOUE Naoki,Shirakawa Michihiro,Yamamoto Kei,GOTO Akiyoshi,Tango Naohiro. Владелец: FUJIFILM Corporation. Дата публикации: 2018-03-22.

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Номер патента: US20210096463A1. Автор: Zhang Teng,LU Kejun,PARK Daeyoun,HU Fanhua. Владелец: . Дата публикации: 2021-04-01.

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Номер патента: US20150165739A1. Автор: Taniuchi Hiroshi. Владелец: . Дата публикации: 2015-06-18.

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Номер патента: US20210325783A1. Автор: NISHIGUCHI Naoki,SAKAKIBARA Hirokazu,Taniguchi Takuhiro,MATSUMOTO Tomoyuki. Владелец: JSR Corporation. Дата публикации: 2021-10-21.

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Номер патента: US20170269467A1. Автор: LIU ZHENG,Zhang Zhichao,Kuo Tsung Chieh,WANG Shoukun. Владелец: . Дата публикации: 2017-09-21.

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Номер патента: US20160318313A1. Автор: Taniuchi Hiroshi. Владелец: . Дата публикации: 2016-11-03.

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Номер патента: US20170349686A1. Автор: INOUE Naoki,Shirakawa Michihiro,Yamamoto Kei,GOTO Akiyoshi,Tango Naohiro. Владелец: FUJIFILM Corporation. Дата публикации: 2017-12-07.

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Номер патента: KR101264676B1. Автор: 정태균. Владелец: 엘지디스플레이 주식회사. Дата публикации: 2013-05-16.

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Номер патента: KR101237968B1. Автор: 김영환,조태익. Владелец: 주식회사 이오테크닉스. Дата публикации: 2013-02-27.

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Номер патента: KR100510455B1. Автор: 박준수,손창진. Владелец: 삼성전자주식회사. Дата публикации: 2005-10-24.

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Номер патента: KR101409558B1. Автор: 김경일. Владелец: 엘지디스플레이 주식회사. Дата публикации: 2014-06-19.

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Номер патента: CN106170721A. Автор: 内田厚,平井政至,唐井贤. Владелец: Kuraray Co Ltd. Дата публикации: 2016-11-30.

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Номер патента: US20050277055A1. Автор: Junichi Kon. Владелец: Fujitsu Ltd. Дата публикации: 2005-12-15.

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Номер патента: CN102346368A. Автор: 朴世镇. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2012-02-08.

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Номер патента: US20120108036A1. Автор: . Владелец: Taiwan Semiconductor Manufacturing Company, Ltd.. Дата публикации: 2012-05-03.

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Номер патента: US20120164566A1. Автор: deVilliers Anton,Hyatt Michael. Владелец: . Дата публикации: 2012-06-28.

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Номер патента: US20120094478A1. Автор: Chen Yung-Tin,Radigan Steven J.. Владелец: . Дата публикации: 2012-04-19.

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Номер патента: US20130244430A1. Автор: LIN Chih-Han. Владелец: Taiwan Semiconductor Manufacturing Company, Ltd.. Дата публикации: 2013-09-19.

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Номер патента: US20140024215A1. Автор: Doris Bruce B.,Cheng Kangguo,Khakifirooz Ali,ZHANG YING. Владелец: INTERNATIONAL BUSINESS MACHINES CORPORATION. Дата публикации: 2014-01-23.

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Номер патента: US20120045721A1. Автор: Printz Wallace P.,Scheer Steven. Владелец: TOKYO ELECTRON LIMITED. Дата публикации: 2012-02-23.

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Номер патента: US20120045722A1. Автор: Printz Wallace P.,Scheer Steven. Владелец: . Дата публикации: 2012-02-23.

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Номер патента: US20120052422A1. Автор: . Владелец: Taiwan Semiconductor Manufacturing Company, Ltd.. Дата публикации: 2012-03-01.

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Номер патента: US20120054696A1. Автор: . Владелец: Taiwan Semiconductor Manufacturing Company, Ltd.. Дата публикации: 2012-03-01.

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Номер патента: US20120118856A1. Автор: . Владелец: . Дата публикации: 2012-05-17.

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Номер патента: US20120128942A1. Автор: . Владелец: TOKYO ELECTRON LIMITED. Дата публикации: 2012-05-24.

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Номер патента: US20120135341A1. Автор: . Владелец: . Дата публикации: 2012-05-31.

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Номер патента: US20120135600A1. Автор: . Владелец: Taiwan Semiconductor Manufacturing Company, Ltd.. Дата публикации: 2012-05-31.

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Номер патента: US20120137261A1. Автор: . Владелец: Synopsys, Inc.. Дата публикации: 2012-05-31.

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Номер патента: US20120138227A1. Автор: . Владелец: LAM RESEARCH CORPORATION. Дата публикации: 2012-06-07.

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Номер патента: US20120180006A1. Автор: Haffner Henning,Baum Zachary,Mansfield Scott M.. Владелец: INTERNATIONAL BUSINESS MACHINES CORPORATION. Дата публикации: 2012-07-12.

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Номер патента: US20120210279A1. Автор: . Владелец: Taiwan Semiconductor Manufacturing Co., Ltd.. Дата публикации: 2012-08-16.

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Номер патента: US20120216157A1. Автор: . Владелец: . Дата публикации: 2012-08-23.

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Номер патента: US20120223439A1. Автор: . Владелец: TEXAS INSTRUMENTS INCORPORATED. Дата публикации: 2012-09-06.

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Номер патента: US20120225552A1. Автор: BLATCHFORD James Walter. Владелец: TEXAS INSTRUMENTS INCORPORATED. Дата публикации: 2012-09-06.

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Номер патента: US20130000846A1. Автор: Romano Andrew R.,Sadjadi S.M. Reza. Владелец: LAM RESEARCH CORPORATION. Дата публикации: 2013-01-03.

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Номер патента: US20130003108A1. Автор: . Владелец: INTERNATIONAL BUSINESS MACHINES CORPORATION. Дата публикации: 2013-01-03.

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Номер патента: US20130007674A1. Автор: . Владелец: INTERNATIONAL BUSINESS MACHINES CORPORATION. Дата публикации: 2013-01-03.

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Номер патента: US20130017378A1. Автор: VAN HAREN Richard Johannes Franciscus,SEWELL Harry,DUSA Mircea,VAN DER HEIJDEN Robertus Wilhelmus,Doytcheva Maya Angelova. Владелец: ASML Netherlands B.V.. Дата публикации: 2013-01-17.

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Номер патента: US20130024822A1. Автор: Hsieh Ken-Hsien,Chen Huang-Yu,Wang Jhih-Jian,Tsai Cheng Kun,Ou Tsong-Hua,Huang Wen-Chun,Liu Ru-Gun. Владелец: Taiwan Semiconductor Manufacturing Company, Ltd.. Дата публикации: 2013-01-24.

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Номер патента: US20130036397A1. Автор: Friedberg Paul David,Yeap Gary K.,Lee John Jung,Zaliznyak Renata. Владелец: Synopsys, Inc.. Дата публикации: 2013-02-07.

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Номер патента: US20130069168A1. Автор: BLATCHFORD James Walter. Владелец: TEXAS INSTRUMENTS INCORPORATED. Дата публикации: 2013-03-21.

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Номер патента: US20130069170A1. Автор: BLATCHFORD James Walter. Владелец: TEXAS INSTRUMENTS INCORPORATED. Дата публикации: 2013-03-21.

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Номер патента: US20130074029A1. Автор: BLATCHFORD James Walter. Владелец: TEXAS INSTRUMENTS INCORPORATED. Дата публикации: 2013-03-21.

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Номер патента: US20130084655A1. Автор: Yue Hongyu Henry,Li Shifang. Владелец: . Дата публикации: 2013-04-04.

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Номер патента: US20130174106A1. Автор: Chen Huang-Yu,WANG Chung-Hsing,HSU Chin-Hsiung. Владелец: Taiwan Semiconductor Manufacturing Co., Ltd.. Дата публикации: 2013-07-04.

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Номер патента: US20130198696A1. Автор: Capodieci Luigi,Wang Lynn T.,MADHAVAN Sriram. Владелец: GLOBALFOUNDRIES INC.. Дата публикации: 2013-08-01.

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Номер патента: US20130244427A1. Автор: Yuan Lei,Kye Jongwook. Владелец: GLOBALFOUNDRIES INC.. Дата публикации: 2013-09-19.

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Номер патента: US20130260563A1. Автор: YANG Jiing-Feng,CHEN Dian-Hau,CHEN Chii-Ping. Владелец: Taiwan Semiconductor Manufacturing Company, Ltd.. Дата публикации: 2013-10-03.

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Номер патента: US20130275927A1. Автор: Su Ke-Ying,Chao Hsiao-Shu,Cheng Yi-Kan. Владелец: Taiwan Semiconductor Manufacturing Company, Ltd.. Дата публикации: 2013-10-17.

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Номер патента: US20130298089A1. Автор: Yuan Lei,Kye Jongwook,YOSHIDA Hidekazu,Woo Youngtag. Владелец: GLOBALFOUNDRIES INC.. Дата публикации: 2013-11-07.

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Номер патента: US20140035151A1. Автор: Yuan Lei,Kye Jongwook,YOSHIDA Hidekazu,RASHED Mahbub,Xiang Qi. Владелец: GLOBALFOUNDRIES INC.. Дата публикации: 2014-02-06.

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Номер патента: US20140068543A1. Автор: Yuan Lei,Kye Jongwook. Владелец: GLOBALFOUNDRIES INC.. Дата публикации: 2014-03-06.

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Номер патента: US20140077380A1. Автор: RASHED Mahbub,KIM JuHan. Владелец: GLOBALFOUNDRIES INC.. Дата публикации: 2014-03-20.

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Номер патента: US20140080069A1. Автор: Yang Chin Cheng. Владелец: MACRONIX INTERNATIONAL CO., LTD.. Дата публикации: 2014-03-20.

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Номер патента: US20140080305A1. Автор: Lee Jenn-Wei,Liu Hung-Jen. Владелец: NANYA TECHNOLOGY CORPORATION. Дата публикации: 2014-03-20.

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Номер патента: US20140089868A1. Автор: Fang Weiping,GAO Tong,Friedberg Paul David,Tong Yang-Shan. Владелец: Synopsys, Inc.. Дата публикации: 2014-03-27.

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Номер патента: CN102446712B. Автор: 毛智彪,俞柳江. Владелец: Shanghai Huali Microelectronics Corp. Дата публикации: 2013-12-04.

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Номер патента: CN104050311B. Автор: 田丽钧,陈国基,吴真智. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-05-25.

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Номер патента: CN102841500B. Автор: 赵孝蜀,郑仪侃,王中兴,苏哿颖,管瑞丰. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2015-04-15.

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Номер патента: CN103441068A. Автор: 黄海,毛智彪,张瑜,黄君,崇二敏. Владелец: Shanghai Huali Microelectronics Corp. Дата публикации: 2013-12-11.

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Номер патента: CN104158563A. Автор: 王小庆,何苏勤,王凌枫,吕咸亮,韩宇南,翟绪经. Владелец: Beijing University of Chemical Technology. Дата публикации: 2014-11-19.

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Номер патента: CN103441066B. Автор: 黄海,毛智彪,张瑜,黄君,崇二敏. Владелец: Shanghai Huali Microelectronics Corp. Дата публикации: 2016-01-27.

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Номер патента: CN103441067B. Автор: 毛智彪,李全波,黄君,李润领,甘志锋. Владелец: Shanghai Huali Microelectronics Corp. Дата публикации: 2016-04-27.

Method of 2D alignment double pattern lithography

Номер патента: TW201003728A. Автор: zhen-kun Wang. Владелец: He zhong shan. Дата публикации: 2010-01-16.

Mask and fabricating method thereof and patterning method

Номер патента: TW200727074A. Автор: Cheng-Chi Wang,Chin-Lung Ting. Владелец: Chi Mei Optoelectronics Corp. Дата публикации: 2007-07-16.

High resolution patterning method

Номер патента: AU2002339067A1. Автор: Daniel Robert Johnson,William Norman Damerell,Anthony William Nigel Kynaston-Pearson. Владелец: Qinetiq Ltd. Дата публикации: 2003-05-12.

Patterning method

Номер патента: AU2002241166A1. Автор: Takeo Kawase. Владелец: Cambridge University Technical Services Ltd CUTS. Дата публикации: 2002-10-21.

Patterning method in semiconductor process

Номер патента: TW322599B. Автор: Guang-Jau Chen,Yuh-Tarng Twu,Geeng-Huei Liaw. Владелец: Mos Electronics Taiwan Inc. Дата публикации: 1997-12-11.

High resolution patterning method

Номер патента: AU2002339064A1. Автор: Daniel Robert Johnson,Greg Peter Wade Fixter,William Norman Damerell,Anthony William Nigel Kynaston-Pearson,Stephen George Appleton. Владелец: Qinetiq Ltd. Дата публикации: 2003-05-12.

Patterning method by hot melt adhesive

Номер патента: JPS56123821A. Автор: Ryohei Inaba,Moriyuki Okamura. Владелец: Canon Inc. Дата публикации: 1981-09-29.

Patterning method for nameplate

Номер патента: JPS57112937A. Автор: Mamoru Kito,Takeshi Mizoguchi. Владелец: HAMASAWA KOGYO KK. Дата публикации: 1982-07-14.

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Номер патента: JPS54113405A. Автор: Yuuji Fuse. Владелец: Fuse Youshiyotsuki Kougiyou Kk. Дата публикации: 1979-09-05.

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Номер патента: US20120231396A1. Автор: . Владелец: FUJIFILM Corporation. Дата публикации: 2012-09-13.

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Номер патента: JP2008046513A. Автор: Noriyuki Saito,Norio Adachi,則之 斉藤,則夫 安達. Владелец: Sony Corp. Дата публикации: 2008-02-28.

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Номер патента: US20120064732A1. Автор: Kodera Katsuyoshi,Kai Yasunobu. Владелец: . Дата публикации: 2012-03-15.

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Номер патента: US20120149211A1. Автор: OJIMA Tomoko. Владелец: . Дата публикации: 2012-06-14.

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Номер патента: US20130009223A1. Автор: . Владелец: SONY CORPORATION. Дата публикации: 2013-01-10.

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Номер патента: JP3915473B2. Автор: 聡史 上島. Владелец: TDK Corp. Дата публикации: 2007-05-16.

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Номер патента: JP3120700B2. Автор: 政 米澤,勝実 小木,信幸 曽山,謙介 影山. Владелец: Mitsubishi Materials Corp. Дата публикации: 2000-12-25.

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Номер патента: JP3879478B2. Автор: 慶一 佐藤,聡史 上島. Владелец: TDK Corp. Дата публикации: 2007-02-14.

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Номер патента: JP3534247B2. Автор: 英二郎 豊田. Владелец: Sumitomo Heavy Industries Ltd. Дата публикации: 2004-06-07.

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Номер патента: US20120104529A1. Автор: TANAKA Tatsuya. Владелец: FUJIFILM Corporation. Дата публикации: 2012-05-03.

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Номер патента: US20120118968A1. Автор: . Владелец: . Дата публикации: 2012-05-17.

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Номер патента: US20120228747A1. Автор: . Владелец: FUJITSU LIMITED. Дата публикации: 2012-09-13.

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Номер патента: US20120231228A1. Автор: Fujimori Shigeo,Tanimura Yasuaki,Nishimura Seiichiro. Владелец: Toray Industries, Inc.. Дата публикации: 2012-09-13.

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Номер патента: US20120235558A1. Автор: . Владелец: . Дата публикации: 2012-09-20.

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Номер патента: US20120242940A1. Автор: . Владелец: FUJIFILM Corporation. Дата публикации: 2012-09-27.

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Номер патента: US20120246602A1. Автор: . Владелец: . Дата публикации: 2012-09-27.

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Номер патента: US20140117529A1. Автор: Hyatt Michael D.,Yang Ming-Chuan,Sipani Vishal,Kewley David A.,Armstrong Kyle,Van Patten Michael Dean. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2014-05-01.

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Номер патента: JP3241144B2. Автор: 卓 川口,仁子 木村. Владелец: Showa Denko Materials Co Ltd. Дата публикации: 2001-12-25.

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Номер патента: JP3248094B2. Автор: 国雄 藤川. Владелец: 大島メリヤス株式会社. Дата публикации: 2002-01-21.

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Номер патента: JP2006041317A. Автор: Choichi Hirai,暢一 平井. Владелец: Sony Corp. Дата публикации: 2006-02-09.

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