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SEMICONDUCTOR MEMORY DEVICES, MEMORY SYSTEMS AND METHODS OF OPERATING SEMICONDUCTOR MEMORY DEVICES

Номер патента: US20210081278A1
Опубликовано: 18-03-2021
Автор(ы): Kwang-Il Park, Sang-Uhn CHA, Seung-Jun Bae, Young-Hun Seo
Принадлежит: SAMSUNG ELECTRONICS CO LTD
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Номер патента: US09384847B2. Автор: Peter B. Gillingham,Graham Allan. Владелец: Conversant Intellectual Property Management Inc. Дата публикации: 2016-07-05.

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Номер патента: US09678553B2. Автор: Hieu Van Tran,Anh Ly,Thuan Vu,Hung Quoc Nguyen. Владелец: Silicon Storage Technology Inc. Дата публикации: 2017-06-13.

Apparatus and method of generating clock signal of semiconductor memory

Номер патента: US20070297547A1. Автор: Young Do Hur. Владелец: Hynix Semiconductor Inc. Дата публикации: 2007-12-27.

RESISTIVE MEMORY DEVICE AND RESISTIVE MEMORY SYSTEM INCLUDING A PLURALITY OF LAYERS, AND METHOD OF OPERATING THE SYSTEM

Номер патента: US20190051353A1. Автор: Kong Jun-Jin,Son Hong-rak,OH EUN-CHU,YOON PIL-SANG. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2019-02-14.

Resistive memory device and resistive memory system including a plurality of layers, and method of operating the system

Номер патента: US10741245B2. Автор: Jun-Jin Kong,Pil-Sang Yoon,Hong-rak Son,Eun-Chu Oh. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-08-11.

Power Sequencing For Embedded Flash Memory Devices

Номер патента: US20160218716A1. Автор: Hieu Van Tran,Anh Ly,Thuan Vu,Hung Quoc Nguyen. Владелец: Silicon Storage Technology Inc. Дата публикации: 2016-07-28.

Improved power sequencing for embedded flash memory devices

Номер патента: EP3149731A1. Автор: Hieu Van Tran,Anh Ly,Thuan Vu,Hung Quoc Nguyen. Владелец: Silicon Storage Technology Inc. Дата публикации: 2017-04-05.

Power Sequencing For Embedded Flash Memory Devices

Номер патента: US20170269662A1. Автор: Hieu Van Tran,Anh Ly,Thuan Vu,Hung Quoc Nguyen. Владелец: Silicon Storage Technology Inc. Дата публикации: 2017-09-21.

Improved power sequencing for embedded flash memory devices

Номер патента: WO2015183473A1. Автор: Hieu Van Tran,Anh Ly,Thuan Vu,Hung Quoc Nguyen. Владелец: Silicon Storage Technology, Inc.. Дата публикации: 2015-12-03.

Systems and methods for latency based data recycling in a solid state memory system

Номер патента: US9740432B2. Автор: Ning Chen,Yu Cai,Zhengang Chen,Erich F. Haratsch,Yunxiang Wu. Владелец: SEAGATE TECHNOLOGY LLC. Дата публикации: 2017-08-22.

Semiconductor memory device maintaining verification data during program suspend, and method of operating the semiconductor memory device

Номер патента: US20230298679A1. Автор: Yeong Jo MUN,Dong Hun Kwak. Владелец: SK hynix Inc. Дата публикации: 2023-09-21.

Semiconductor memory device maintaining verification data during program suspend, and method of operating the semiconductor memory device

Номер патента: US11791002B2. Автор: Yeong Jo MUN,Dong Hun Kwak. Владелец: SK hynix Inc. Дата публикации: 2023-10-17.

System and method for emulating an EEPROM in a non-volatile memory device

Номер патента: US09389999B2. Автор: Thomas Kern,Thomas Nirschl,Ulrich Backhausen,Jens Rosenbusch,Edvin Paparisto. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2016-07-12.

Semiconductor memory devices that are resistant to power attacks and methods of operating semiconductor memory devices that are resistant to power attacks

Номер патента: US8230234B2. Автор: Odile Derouet,Joong Chul Yoon,Gae Won Seo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2012-07-24.

Semiconductor memory devices that are resistant to power attacks and methods of operating semiconductor memory devices that are resistant to power attacks

Номер патента: US20090043969A1. Автор: Odile Derouet,Joong Chul Yoon,Gae Won Seo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2009-02-12.

Semiconductor memory device, controller and memory system having the same

Номер патента: US20210294503A1. Автор: Hyo Jae Lee. Владелец: SK hynix Inc. Дата публикации: 2021-09-23.

System and method of command based and current limit controlled memory device power up

Номер патента: US09640227B2. Автор: Jeff Yu,Ted Pekny. Владелец: Micron Technology Inc. Дата публикации: 2017-05-02.

Volatile memory device included in memory system and method for extending life expectancy thereof

Номер патента: US20240248610A1. Автор: Junyoung Ko,Jungmin Bak,Changhwi Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-25.

Semiconductor memory and method for density configuring of bank of semiconductor memory

Номер патента: US11875045B2. Автор: Jixing Chen,Weibing SHANG. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-01-16.

Semiconductor memory and method for density configurion of bank of semiconductor memory

Номер патента: US20230012916A1. Автор: Jixing Chen,Weibing SHANG. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-01-19.

System and method to dynamically determine a timing parameter of a memory device

Номер патента: EP2973576A2. Автор: Jungwon Suh,Xiangyu Dong. Владелец: Qualcomm Inc. Дата публикации: 2016-01-20.

System and method to dynamically determine a timing parameter of a memory device

Номер патента: WO2014150815A2. Автор: Jungwon Suh,Xiangyu Dong. Владелец: QUALCOMM INCORPORATED. Дата публикации: 2014-09-25.

Memory system, memory module and method to backup and restore system using command address latency

Номер патента: US09471517B1. Автор: Hyun-Ju YOON. Владелец: SK hynix Inc. Дата публикации: 2016-10-18.

Memory system, memory controller, and method for operating same

Номер патента: US20210173587A1. Автор: Woong Sik SHIN. Владелец: SK hynix Inc. Дата публикации: 2021-06-10.

Memory device for performing foggy-fine program operation and method of operating the memory device

Номер патента: US20240161831A1. Автор: Yeong Jo MUN,Dong Hun Kwak,Jae Yeop Jung,Hyun Seob SHIN. Владелец: SK hynix Inc. Дата публикации: 2024-05-16.

A memory device and method of controlling leakage current within such a memory device

Номер патента: GB2513701A. Автор: Bo Zheng,Gus Yeung,Fakhruddin Ali Bohra. Владелец: Advanced Risc Machines Ltd. Дата публикации: 2014-11-05.

Memory system and operating method of the memory system inputting an additional read enable toggle signal to output status information of memory device

Номер патента: US11880599B2. Автор: Dae Sung Kim,Sung Ho Ahn,Jae Hyeong Jeong. Владелец: SK hynix Inc. Дата публикации: 2024-01-23.

Memory system, memory controller, and method for operating memory system

Номер патента: US20210279000A1. Автор: Chan Hyeok CHO. Владелец: SK hynix Inc. Дата публикации: 2021-09-09.

System and method of command based and current limit controlled memory device power up

Номер патента: US9305609B2. Автор: Jeff Yu,Ted Pekny. Владелец: Micron Technology Inc. Дата публикации: 2016-04-05.

Memory device, memory controller and memory system including them, and method for operating them for matching operation mode of memory interfaces

Номер патента: US10915259B2. Автор: Jee-Yul Kim. Владелец: SK hynix Inc. Дата публикации: 2021-02-09.

Memory system and controller for storing map data of volatile memory into nonvolatile memory device during power off operation

Номер патента: US11422889B2. Автор: Do Hun Kim. Владелец: SK hynix Inc. Дата публикации: 2022-08-23.

Memory system and controller for storing map data of volatile memory into nonvolatile memory device during power off operation

Номер патента: US20220121517A1. Автор: Do Hun Kim. Владелец: SK hynix Inc. Дата публикации: 2022-04-21.

Memory system, memory controller and method for operating memory system for determining whether to perform direct write based on reference write size

Номер патента: US11507509B2. Автор: Yu Jung Lee,Do Hyeong LEE,Min Kyu Choi. Владелец: SK hynix Inc. Дата публикации: 2022-11-22.

Memory system, memory controller, and method for operating same

Номер патента: US11775221B2. Автор: Woong Sik SHIN. Владелец: SK hynix Inc. Дата публикации: 2023-10-03.

Memory control circuit for controlling memory device that operates in self-refresh mode, and method of controlling the same

Номер патента: US9761301B2. Автор: Junnosuke Kataoka. Владелец: Canon Inc. Дата публикации: 2017-09-12.

Memory control circuit for controlling memory device that operates in self-refresh mode, and method of controlling the same

Номер патента: US20170062041A1. Автор: Junnosuke Kataoka. Владелец: Canon Inc. Дата публикации: 2017-03-02.

Memory system, memory controller and method for operating memory system

Номер патента: US20240153576A1. Автор: Seong Chan Kim. Владелец: SK hynix Inc. Дата публикации: 2024-05-09.

Memory device having improved program and erase operations and operating method of the memory device

Номер патента: US11880582B2. Автор: Sang Heon Lee,Keon Soo Shim,Byung In Lee,Hee Joung PARK,Jae Il TAK. Владелец: SK hynix Inc. Дата публикации: 2024-01-23.

Nonvolatile memory device including banks operating in different operation modes, operation method of memory controller, and storage device comprising nonvolatile memory device and memory controller

Номер патента: US20200335163A1. Автор: Bong-Kil Jung. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-10-22.

Memory system, memory controller and method for operating memory controller

Номер патента: US20200394074A1. Автор: Hee Chan Shin,Do Hyeong LEE,Yong Seok Oh,Young Ho AHN. Владелец: SK hynix Inc. Дата публикации: 2020-12-17.

Memory system and controller

Номер патента: US9478293B2. Автор: Toshihiro Suzuki,Masanobu Shirakawa,Tetsufumi YANAGIDA. Владелец: Toshiba Corp. Дата публикации: 2016-10-25.

Methods of operating semiconductor memory devices with selective write-back of data for error scrubbing and related devices

Номер патента: US09990163B2. Автор: Uk-Song KANG,Hoi-Ju CHUNG,Sang-Uhn CHA. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-06-05.

Non-volatile memory device, method of operating the device, and memory system including the device

Номер патента: US20230079939A1. Автор: Heejin Kim,Hyunjun Yoon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-03-16.

Non-volatile memory device, method of operating the device, and memory system including the device

Номер патента: US20200319953A1. Автор: Heejin Kim,Hyunjun Yoon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-10-08.

Semiconductor memory devices, memory systems and methods of controlling of repair of semiconductor memory devices

Номер патента: US20210064462A1. Автор: Dong Kim,Hyunglae Eun,Inhoon Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-03-04.

Semiconductor memory devices, memory systems and methods of controlling of repair of semiconductor memory devices

Номер патента: US11163640B2. Автор: Dong Kim,Hyunglae Eun,Inhoon Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-11-02.

Memory system and operating method of the memory system

Номер патента: US20210098071A1. Автор: Ju Hyeon HAN. Владелец: SK hynix Inc. Дата публикации: 2021-04-01.

Error correction operations in a memory device

Номер патента: US09367391B2. Автор: William Lam. Владелец: Micron Technology Inc. Дата публикации: 2016-06-14.

A semiconductor memory device with on-chip error correction circuit and a method of correcting an error

Номер патента: TW422976B. Автор: Jin-Yub Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2001-02-21.

Memory system for selecting counter-error operation through error analysis and data process system including the same

Номер патента: US20210208966A1. Автор: Nam Young AHN,Eung Bo Shim. Владелец: SK hynix Inc. Дата публикации: 2021-07-08.

Scan synchronous-write-through testing architectures for a memory device

Номер патента: US20220171688A1. Автор: Ching-Wei Wu,Kao-Cheng LIN,Chia-En HUANG,Ming-Hung Chang,Atul Katoch,Uppu Sharath Chandra,Donald G. Mikan, Jr.,Hao-I Yang,Ming-Chien Tsai,Tsung-Yung Chang,Saman M.I. Adham. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-06-02.

Scan synchronous-write-through testing architectures for a memory device

Номер патента: US20200293417A1. Автор: Ching-Wei Wu,Kao-Cheng LIN,Chia-En HUANG,Ming-Hung Chang,Atul Katoch,Uppu Sharath Chandra,Donald G. Mikan, Jr.,Hao-I Yang,Ming-Chien Tsai,Tsung-Yung Chang,Saman M.I. Adham. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-09-17.

Scan synchronous-write-through testing architectures for a memory device

Номер патента: US11734142B2. Автор: Ching-Wei Wu,Kao-Cheng LIN,Chia-En HUANG,Ming-Hung Chang,Atul Katoch,Uppu Sharath Chandra,Donald G. Mikan, Jr.,Hao-I Yang,Saman M. I. Adham,Ming-Chien Tsai,Tsung-Yung Chang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-08-22.

Scan synchronous-write-through testing architectures for a memory device

Номер патента: US11256588B2. Автор: Ching-Wei Wu,Kao-Cheng LIN,Chia-En HUANG,Ming-Hung Chang,Atul Katoch,Uppu Sharath Chandra,Donald G. Mikan, Jr.,Hao-I Yang,Saman M. I. Adham,Ming-Chien Tsai,Tsung-Yung Chang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-02-22.

Apparatuses and methods for arbitrating a shared terminal for calibration of an impedance termination

Номер патента: US09740269B1. Автор: Sujeet Ayyapureddi,Suryanarayana Tatapudi. Владелец: Micron Technology Inc. Дата публикации: 2017-08-22.

Apparatuses and methods for arbitrating a shared terminal for calibration of an impedance termination

Номер патента: US09665462B2. Автор: Sujeet Ayyapureddi,Suryanarayana Tatapudi. Владелец: Micron Technology Inc. Дата публикации: 2017-05-30.

Non-volatile memory device, method of operating the device, and memory system including the device

Номер патента: US11989082B2. Автор: Heejin Kim,Hyunjun Yoon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-05-21.

Error-handling management during copyback operations in memory devices

Номер патента: US12072762B2. Автор: Vamsi Pavan Rayaprolu,Patrick R. KHAYAT. Владелец: Micron Technology Inc. Дата публикации: 2024-08-27.

Adaptive scan frequency for detecting errors in a memory system

Номер патента: WO2019222488A1. Автор: Michael G. McNeeley,Kishore K. Muchherla,Sampath K. Ratnam,Akira Goda,Todd A. Marquart,Kevin R. Brandt,William C. Filipiak. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2019-11-21.

Adaptive scan frequency for detecting errors in a memory system

Номер патента: US20190354421A1. Автор: Michael G. McNeeley,Kishore K. Muchherla,Sampath K. Ratnam,Akira Goda,Todd A. Marquart,Kevin R. Brandt,William C. Filipiak. Владелец: Micron Technology Inc. Дата публикации: 2019-11-21.

Memory device with status feedback for error correction

Номер патента: US20200394103A1. Автор: Scott E. Schaefer,Aaron P. Boehm. Владелец: Micron Technology Inc. Дата публикации: 2020-12-17.

Memory device with status feedback for error correction

Номер патента: EP3983898A1. Автор: Scott E. Schaefer,Aaron P. Boehm. Владелец: Micron Technology Inc. Дата публикации: 2022-04-20.

Memory device with status feedback for error correction

Номер патента: US20220237081A1. Автор: Scott E. Schaefer,Aaron P. Boehm. Владелец: Micron Technology Inc. Дата публикации: 2022-07-28.

Memory device with status feedback for error correction

Номер патента: US20230418708A1. Автор: Scott E. Schaefer,Aaron P. Boehm. Владелец: Micron Technology Inc. Дата публикации: 2023-12-28.

Adaptive scan frequency for detecting errors in a memory system

Номер патента: EP3794454A1. Автор: Michael G. McNeeley,Kishore K. Muchherla,Sampath K. Ratnam,Akira Goda,Todd A. Marquart,Kevin R. Brandt,William C. Filipiak. Владелец: Micron Technology Inc. Дата публикации: 2021-03-24.

Memory controller, memory module, and memory system and operation methods thereof

Номер патента: US20180129418A1. Автор: Young-Ook SONG. Владелец: SK hynix Inc. Дата публикации: 2018-05-10.

Driving method of memory controller and nonvolatile memory device controlled by memory controller

Номер патента: US09594673B2. Автор: Kyungryun Kim,Seokjun Ham. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-03-14.

Scan synchronous-write-through testing architectures for a memory device

Номер патента: US20190004915A1. Автор: Ching-Wei Wu,Kao-Cheng LIN,Chia-En HUANG,Ming-Hung Chang,Atul Katoch,Uppu Sharath Chandra,Donald G. Mikan, Jr.,Hao-I Yang,Ming-Chien Tsai,Tsung-Yung Chang,Saman M.I ADHAM. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2019-01-03.

Scan synchronous-write-through testing architectures for a memory device

Номер патента: US20230342272A1. Автор: Ching-Wei Wu,Kao-Cheng LIN,Chia-En HUANG,Ming-Hung Chang,Atul Katoch,Uppu Sharath Chandra,Donald G. Mikan, Jr.,Hao-I Yang,Ming-Chien Tsai,Tsung-Yung Chang,Saman M.I. Adham. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-10-26.

Flash memory system

Номер патента: US09779804B2. Автор: Hong Beom Pyeon,Jin-Ki Kim,Hakjune Oh. Владелец: Conversant Intellectual Property Management Inc. Дата публикации: 2017-10-03.

Flash memory system

Номер патента: US09524783B2. Автор: Hong Beom Pyeon,Jin-Ki Kim,Hakjune Oh. Владелец: Conversant Intellectual Property Management Inc. Дата публикации: 2016-12-20.

Flash memory device

Номер патента: US09966133B2. Автор: Hong Beom Pyeon,Jin-Ki Kim,Hakjune Oh. Владелец: Conversant Intellectual Property Management Inc. Дата публикации: 2018-05-08.

Semiconductor memory device outputting read-busy signal and memory system including the same

Номер патента: US09911479B2. Автор: Kwang Hyun Kim,Jae Hyeong Jeong. Владелец: SK hynix Inc. Дата публикации: 2018-03-06.

Semiconductor memory device and memory system

Номер патента: US09575880B2. Автор: Yong Deok Cho. Владелец: SK hynix Inc. Дата публикации: 2017-02-21.

Memory devices providing in situ computing using sequential transfer of row buffered data and related methods and circuits

Номер патента: US20210142846A1. Автор: Patricia Gonzalez,Kevin Skadron,Mircea R. Stan,Marzieh Lenjani. Владелец: UNIVERSITY OF VIRGINIA PATENT FOUNDATION. Дата публикации: 2021-05-13.

Method and system for accessing a flash memory device

Номер патента: US09836227B2. Автор: Hong Beom Pyeon,Jin-Ki Kim. Владелец: Conversant Intellectual Property Management Inc. Дата публикации: 2017-12-05.

Access schemes for activity-based data protection in a memory device

Номер патента: US20210335407A1. Автор: Corrado Villa,Andrea Martinelli. Владелец: Micron Technology Inc. Дата публикации: 2021-10-28.

Memory device of adaptively calibrating timing margin and integrated circuit including the same

Номер патента: US09870043B2. Автор: Jong-Pil Lee,Jae-Seung Choi,Jung-Hun Heo,Su-Hyun YUN. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-01-16.

Semiconductor memory device and operation method of swizzling data

Номер патента: US11742046B2. Автор: Jeongho Lee,Kwangjin Lee,Hee Hyun Nam,Youngkwang YOO,Jaeho SHIN. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-08-29.

Memory device and memory system performing request-based refresh, and operating method of the memory device

Номер патента: US09940991B2. Автор: Ho-young Song,Hyun-Joong Kim,Hoi-Ju CHUNG,Sang-Uhn CHA,Ju-Yun JUNG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-04-10.

Memory system and electronic device

Номер патента: US09620180B2. Автор: Young-Jin Cho,Oh-seong Kwon,Dong-yang Lee,Sun-Young Lim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-04-11.

Memory register definition systems and methods

Номер патента: US20090141564A1. Автор: George Pax. Владелец: Micron Technology Inc. Дата публикации: 2009-06-04.

Method for controlling memory device asynchronously with respect to system clock, and related memory device and memory system

Номер патента: US20150287445A1. Автор: Tah-Kang Joseph Ting,Gyh-Bin Wang,Yung-Ching Hsieh. Владелец: PieceMakers Tech Inc. Дата публикации: 2015-10-08.

Method for controlling memory device asynchronously with respect to system clock, and related memory device and memory system

Номер патента: US09679622B2. Автор: Tah-Kang Joseph Ting,Gyh-Bin Wang,Yung-Ching Hsieh. Владелец: PieceMakers Tech Inc. Дата публикации: 2017-06-13.

Generic physical layer providing a unified architecture for interfacing with an external memory device and methods of interfacing with an external memory device

Номер патента: US20220208240A1. Автор: Chee Hak Teh,Soon Chieh Lim,Tat Hin Tan. Владелец: SKYECHIP SDN BHD. Дата публикации: 2022-06-30.

Access schemes for activity-based data protection in a memory device

Номер патента: WO2020036721A1. Автор: Corrado Villa,Andrea Martinelli. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2020-02-20.

Access schemes for activity-based data protection in a memory device

Номер патента: US20200058341A1. Автор: Corrado Villa,Andrea Martinelli. Владелец: Micron Technology Inc. Дата публикации: 2020-02-20.

Access schemes for activity-based data protection in a memory device

Номер патента: EP3837685A1. Автор: Corrado Villa,Andrea Martinelli. Владелец: Micron Technology Inc. Дата публикации: 2021-06-23.

Nonvolatile memory system using control signals to transmit varied signals via data pins

Номер патента: US09886378B2. Автор: Hyotaek Leem. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-02-06.

Control methods and memory systems using the same

Номер патента: US09627031B1. Автор: Kai-Hsin CHEN,Shih-Hsiu Lin. Владелец: MediaTek Inc. Дата публикации: 2017-04-18.

Method of operation of a memory controller

Номер патента: US6304937B1. Автор: Mark Horowitz,Michael Farmwald. Владелец: RAMBUS INC. Дата публикации: 2001-10-16.

Storage device and operating method of storage device

Номер патента: US20240257849A1. Автор: Hyungjin Kim,Youngwook Kim,Soong-Man Shin. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-08-01.

System and method for providing configurable latency and/or density in memory devices

Номер патента: TW201107972A. Автор: Christopher S Johnson,Todd D Farrell. Владелец: Micron Technology Inc. Дата публикации: 2011-03-01.

Apparatuses and methods for data movement

Номер патента: EP3268965A1. Автор: David L. Pinney,Glen E. Hush. Владелец: Micron Technology Inc. Дата публикации: 2018-01-17.

Method of adjusting operating conditions for semiconductor memory device

Номер патента: US11763904B2. Автор: Shinji Suzuki. Владелец: Kioxia Corp. Дата публикации: 2023-09-19.

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Номер патента: US11839081B2. Автор: Jung Shik JANG. Владелец: SK hynix Inc. Дата публикации: 2023-12-05.

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Номер патента: US20240107769A1. Автор: Jung Shik JANG. Владелец: SK hynix Inc. Дата публикации: 2024-03-28.

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Номер патента: US20110170356A1. Автор: Dong-Uk Choi,Hee-Soo Kang,Choong-ho Lee. Владелец: Individual. Дата публикации: 2011-07-14.

Method of fabricating a non-volatile semiconductor memory

Номер патента: US7553728B2. Автор: Makoto Mizukami,Fumitaka Arai. Владелец: Toshiba Corp. Дата публикации: 2009-06-30.

Method of adjusting operating conditions for semiconductor memory device

Номер патента: US20230069683A1. Автор: Shinji Suzuki. Владелец: Kioxia Corp. Дата публикации: 2023-03-02.

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Номер патента: US20220059175A1. Автор: Shinji Suzuki. Владелец: Kioxia Corp. Дата публикации: 2022-02-24.

Systems and Methods for an Internal Clock Tree Structure in a Memory Device

Номер патента: US20240371421A1. Автор: Sanjeev Kumar Jain,Atul Katoch. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-11-07.

System and computer-implemented method of machine-to-machine authentication of the device

Номер патента: RU2763779C2. Автор: Виктор ПЕРЕС ВИЛЬЯР,Гжегож М. КАВЕЦКИЙ. Владелец: Зе Боинг Компани. Дата публикации: 2022-01-11.

Malicious attack detection system and an associated method of use

Номер патента: EP2036060A2. Автор: Hojae Lee,Prudhvi Nadh NOONEY,Indra Gunawan Harijono,Uooyeol Yoon. Владелец: Connect Technologies Corp. Дата публикации: 2009-03-18.

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Номер патента: WO2020131362A1. Автор: Jonathan S. Parry,Robert W. Strong. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2020-06-25.

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Номер патента: EP3899728A1. Автор: Jonathan S. Parry,Robert W. Strong. Владелец: Micron Technology Inc. Дата публикации: 2021-10-27.

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Номер патента: US11942147B2. Автор: Georgios Vellianitis,Marcus Johannes Henricus Van Dal,Gerben Doornbos,Blandine Duriez,Mauricio Manfrini. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-03-26.

Resistive random access memory device with three-dimensional cross-point structure and method of operating the same

Номер патента: US11972796B2. Автор: Kikuko Sugimae,Yusuke ARAYASHIKI. Владелец: Kioxia Corp. Дата публикации: 2024-04-30.

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Номер патента: EP3695439A1. Автор: Yanli Zhang,Masatoshi Nishikawa,Shinsuke YADA. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-08-19.

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Номер патента: WO2022086597A1. Автор: Derek Stewart,John Read,Michael Grobis. Владелец: WESTERN DIGITAL TECHNOLOGIES, INC.. Дата публикации: 2022-04-28.

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Номер патента: US11871679B2. Автор: Derek Stewart,Bhagwati PRASAD,Alan Kalitsov. Владелец: Western Digital Technologies Inc. Дата публикации: 2024-01-09.

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Номер патента: US20210044134A1. Автор: Hui-Chung Hung. Владелец: Coretronic Corp. Дата публикации: 2021-02-11.

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Номер патента: US11750017B2. Автор: Hui-Chung Hung. Владелец: Coretronic Corp. Дата публикации: 2023-09-05.

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Номер патента: US09960166B2. Автор: Yuniarto Widjaja. Владелец: Zeno Semiconductor Inc. Дата публикации: 2018-05-01.

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Номер патента: US09761589B2. Автор: Yuniarto Widjaja. Владелец: Zeno Semiconductor Inc. Дата публикации: 2017-09-12.

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Номер патента: US09484082B2. Автор: Yuniarto Widjaja. Владелец: Zeno Semiconductor Inc. Дата публикации: 2016-11-01.

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Номер патента: US20210257365A1. Автор: Yuniarto Widjaja. Владелец: Zeno Semiconductor Inc. Дата публикации: 2021-08-19.

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Номер патента: US7893473B2. Автор: Kenji Maruyama,Masao Kondo,Keisuke Sato. Владелец: Fujitsu Ltd. Дата публикации: 2011-02-22.

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Номер патента: US20230413511A1. Автор: Yuniarto Widjaja. Владелец: Zeno Semiconductor Inc. Дата публикации: 2023-12-21.

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Номер патента: US11785758B2. Автор: Yuniarto Widjaja. Владелец: Zeno Semiconductor Inc. Дата публикации: 2023-10-10.

Techniques for refreshing a semiconductor memory device

Номер патента: WO2011140033A2. Автор: Yogesh Luthra. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2011-11-10.

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Номер патента: US09524971B2. Автор: Timothy Thurgate,Michael A. Van Buskirk,Srinivasa R. Banna. Владелец: Ovonyx Memory Technology LLC. Дата публикации: 2016-12-20.

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Номер патента: USRE36875E. Автор: Akira Yamazaki,Yasuhiro Konishi,Katsumi Dosaka,Hisashi Iwamoto,Masaki Kumanoya. Владелец: Mitsubishi Electric Corp. Дата публикации: 2000-09-19.

Memory device comprising electrically floating body transistor

Номер патента: US09799392B2. Автор: Yuniarto Widjaja,Jin-Woo Han,Neal Berger. Владелец: Zeno Semiconductor Inc. Дата публикации: 2017-10-24.

Embedded memory device and method for embedding memory device in a substrate

Номер патента: US20200075567A1. Автор: Andrew Collins. Владелец: Intel Corp. Дата публикации: 2020-03-05.

Charge trap memory devices

Номер патента: US20210242230A1. Автор: Robert Katz,Darren L. Anand,Toshiaki Kirihata,Dan Moy,Norman W. Robson,Faraz Khan. Владелец: GlobalFoundries US Inc. Дата публикации: 2021-08-05.

Ferroelectric memory device having fatigue averaging

Номер патента: US5978252A. Автор: Tohru Miwa. Владелец: NEC Corp. Дата публикации: 1999-11-02.

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Номер патента: US20070211533A1. Автор: Sang-jin Park,Sang-Min Shin,Young-soo Park,Young-Kwan Cha. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2007-09-13.

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Номер патента: US20230104520A1. Автор: Seongkyung Kim,Dahye MIN,Ukjin Jung. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-04-06.

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Номер патента: US11955195B2. Автор: Seongkyung Kim,Dahye MIN,Ukjin Jung. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-04-09.

Memory device comprising electrically floating body transistor

Номер патента: US20200168267A1. Автор: Yuniarto Widjaja,Jin-Woo Han,Neal Berger. Владелец: Zeno Semiconductor Inc. Дата публикации: 2020-05-28.

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Номер патента: US20210183432A1. Автор: Yuniarto Widjaja,Jin-Woo Han,Neal Berger. Владелец: Zeno Semiconductor Inc. Дата публикации: 2021-06-17.

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Номер патента: US20240296890A1. Автор: Chen-Ming Huang,Shih-Hsien Chen,Chia-Sheng Lin,Po-Wei Liu,Hung-Ling Shih,Yu-Chun Chang,Wei-Lin Chang,Wen-Tuo Huang,Yu-Hsiang Yang,Shihkuang YANG,Yu-Ling Hsu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-05.

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Номер патента: US20220285607A1. Автор: SEUNGJAE LEE,Naoki Hase,Seonggeon Park,Kwangseok KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-09-08.

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Номер патента: US20230143211A1. Автор: Chih-Jen Huang,Chao-Yang Chen. Владелец: Memorist Co Ltd. Дата публикации: 2023-05-11.

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Номер патента: US11296098B2. Автор: Jun Hee Lee,Ho Sik Lee. Владелец: UNIST Academy Industry Research Corp. Дата публикации: 2022-04-05.

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Номер патента: US20220085057A1. Автор: Jung Shik JANG. Владелец: SK hynix Inc. Дата публикации: 2022-03-17.

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Номер патента: US20220384525A1. Автор: Yu-Ming Lin,Chao-I Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-12-01.

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Номер патента: US20240147738A1. Автор: Yu-Ming Lin,Chao-I Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-05-02.

Semiconductor Memory Having Volatile and Multi-Bit Non-Volatile Functionality and Method of Operating

Номер патента: US20150109860A1. Автор: Yuniarto Widjaja. Владелец: Zeno Semiconductor Inc. Дата публикации: 2015-04-23.

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Номер патента: US20190156889A1. Автор: Widjaja Yuniarto. Владелец: . Дата публикации: 2019-05-23.

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Номер патента: US20180174654A1. Автор: Widjaja Yuniarto. Владелец: . Дата публикации: 2018-06-21.

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Номер патента: US20170213593A1. Автор: Widjaja Yuniarto. Владелец: . Дата публикации: 2017-07-27.

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Номер патента: US10818354B2. Автор: Yuniarto Widjaja. Владелец: Zeno Semiconductor Inc. Дата публикации: 2020-10-27.

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Номер патента: US8014200B2. Автор: Yuniarto Widjaja. Владелец: Zeno Semiconductor Inc. Дата публикации: 2011-09-06.

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Номер патента: US8923052B2. Автор: Yuniarto Widjaja. Владелец: Zeno Semiconductor Inc. Дата публикации: 2014-12-30.

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Номер патента: US20230071284A1. Автор: Chih-Wei Hung,Kuo-Pin Chang,Chien Hung Liu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-03-09.

Ferroelectric memory device and method of making the same

Номер патента: US20030087480A1. Автор: Hee Kang. Владелец: Hyundai Electronics Industries Co Ltd. Дата публикации: 2003-05-08.

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Номер патента: US20170133383A1. Автор: Sandhu Gurtej S.,Kinney Wayne I.,Pandey Sumeet C.,Holtzclaw Karl W.. Владелец: . Дата публикации: 2017-05-11.

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Номер патента: KR100276774B1. Автор: 야스모리 후쿠시마,토루 우에다,켄타 나카무라. Владелец: 마찌다 가쯔히꼬. Дата публикации: 2001-01-15.

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Номер патента: WO2024137025A1. Автор: Hiroyuki Ogawa,Tomohiro Kubo,Masato Miyamoto. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-06-27.

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Номер патента: TW451427B. Автор: Kiyohiko Sakakibara. Владелец: Mitsubishi Electric Corp. Дата публикации: 2001-08-21.

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Номер патента: US09929172B2. Автор: Sung-Hoon Kim,Ki-Won Kim,Jae-Ick SON. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-03-27.

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Номер патента: US20210043637A1. Автор: Bin Liu,Eng Huat Toh,Shyue Seng Tan,Desmond Jia Jun Loy. Владелец: GLOBALFOUNDRIES SINGAPORE PTE LTD. Дата публикации: 2021-02-11.

Method of fabricating synapse memory device

Номер патента: US09773802B2. Автор: XIANYU Wenxu,Seong Ho Cho,Hojung Kim,Inkyeong Yoo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-09-26.

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Номер патента: US09425828B2. Автор: Jun-Jin Kong,Kyoung-lae Cho,Man-keun Seo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-08-23.

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Номер патента: US09378813B2. Автор: Sung Min Lee. Владелец: SK hynix Inc. Дата публикации: 2016-06-28.

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Номер патента: US20180012893A1. Автор: OR-BACH Zvi,Widjaja Yuniarto. Владелец: . Дата публикации: 2018-01-11.

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Номер патента: US20200013781A1. Автор: Zvi Or-Bach,Yuniarto Widjaja. Владелец: Zeno Semiconductor Inc. Дата публикации: 2020-01-09.

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Номер патента: US20170053919A1. Автор: OR-BACH Zvi,Widjaja Yuniarto. Владелец: . Дата публикации: 2017-02-23.

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Номер патента: US20190096889A1. Автор: OR-BACH Zvi,Widjaja Yuniarto. Владелец: . Дата публикации: 2019-03-28.

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Номер патента: US20200168609A1. Автор: OR-BACH Zvi,Widjaja Yuniarto. Владелец: . Дата публикации: 2020-05-28.

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Номер патента: US20150221650A1. Автор: OR-BACH Zvi,Widjaja Yuniarto. Владелец: . Дата публикации: 2015-08-06.

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Номер патента: US20170221900A1. Автор: OR-BACH Zvi,Widjaja Yuniarto. Владелец: . Дата публикации: 2017-08-03.

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Номер патента: US20140340972A1. Автор: OR-BACH Zvi,Widjaja Yuniarto. Владелец: . Дата публикации: 2014-11-20.

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Номер патента: US20190259763A1. Автор: Zvi Or-Bach,Yuniarto Widjaja. Владелец: Zeno Semiconductor Inc. Дата публикации: 2019-08-22.

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Номер патента: US20180308848A1. Автор: OR-BACH Zvi,Widjaja Yuniarto. Владелец: . Дата публикации: 2018-10-25.

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Номер патента: US20200335503A1. Автор: OR-BACH Zvi,Widjaja Yuniarto. Владелец: . Дата публикации: 2020-10-22.

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Номер патента: US8514623B2. Автор: Zvi Or-Bach,Yuniarto Widjaja. Владелец: Zeno Semiconductor Inc. Дата публикации: 2013-08-20.

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Номер патента: US10748904B2. Автор: Zvi Or-Bach,Yuniarto Widjaja. Владелец: Zeno Semiconductor Inc. Дата публикации: 2020-08-18.

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Номер патента: US20240095192A1. Автор: Goichi Ootomo. Владелец: Kioxia Corp. Дата публикации: 2024-03-21.

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Номер патента: US12118217B2. Автор: Jang Hun YUN. Владелец: SK hynix Inc. Дата публикации: 2024-10-15.

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Номер патента: US20240036741A1. Автор: Jang Hun YUN. Владелец: SK hynix Inc. Дата публикации: 2024-02-01.

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Номер патента: US09922687B2. Автор: Jee Yul KIM. Владелец: SK hynix Inc. Дата публикации: 2018-03-20.

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Номер патента: US09431076B2. Автор: Jee Yul KIM. Владелец: SK hynix Inc. Дата публикации: 2016-08-30.

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Номер патента: US20200381064A1. Автор: Dong Hyun Kim,Seung Il Kim,Youn Ho Jung,Min Ho HER. Владелец: SK hynix Inc. Дата публикации: 2020-12-03.

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Номер патента: US09740412B2. Автор: Tae Young Kim,Won Suk JUNG,Myeong Joon Kang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-08-22.

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Номер патента: US09466338B1. Автор: Cher Hei Koo. Владелец: SK hynix Inc. Дата публикации: 2016-10-11.

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Номер патента: US20080253201A1. Автор: Dong Uk Lee. Владелец: Hynix Semiconductor Inc. Дата публикации: 2008-10-16.

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Номер патента: US20210082478A1. Автор: Jeonghyeon Cho,Seonghoon JOO,llhan CHOI. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-03-18.

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Номер патента: US20030058731A1. Автор: Jae-Hyun Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2003-03-27.

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Номер патента: US6535457B1. Автор: Jae-Hyun Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2003-03-18.

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Номер патента: US20240304225A1. Автор: Hyung Jin Choi,Tae Hun Park,Kyu Nam LIM,Dong Hun Kwak. Владелец: SK hynix Inc. Дата публикации: 2024-09-12.

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Номер патента: US12073914B2. Автор: Kyungryun Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-08-27.

Apparatus and method of generating DBI signal in semiconductor memory apparatus

Номер патента: US7408483B2. Автор: Dong-Uk Lee. Владелец: Hynix Semiconductor Inc. Дата публикации: 2008-08-05.

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Номер патента: US20090168560A1. Автор: Sung-Soo Chi. Владелец: Hynix Semiconductor Inc. Дата публикации: 2009-07-02.

System and computer implemented method of personal monitoring

Номер патента: US09467521B2. Автор: David S. Owens. Владелец: Individual. Дата публикации: 2016-10-11.

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Номер патента: US20240265955A1. Автор: Shun-Ke WU. Владелец: Nanya Technology Corp. Дата публикации: 2024-08-08.

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Номер патента: US12125557B2. Автор: Shun-Ke WU. Владелец: Nanya Technology Corp. Дата публикации: 2024-10-22.

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Номер патента: US20230317128A1. Автор: Young-hun Kim,Tae-Young Oh,Si-Hong Kim,Kyung-Soo Ha. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-10-05.

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Номер патента: US20230116292A1. Автор: JIN Lan,Genta Takaya. Владелец: Micron Technology Inc. Дата публикации: 2023-04-13.

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Номер патента: US20210335402A1. Автор: JIN Lan,Genta Takaya. Владелец: Micron Technology Inc. Дата публикации: 2021-10-28.

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Номер патента: US20230377619A1. Автор: JIN Lan,Genta Takaya. Владелец: Lodestar Licensing Group LLC. Дата публикации: 2023-11-23.

Memory device, a memory system and an operating method of the memory device

Номер патента: EP4123648A1. Автор: Kyungryun Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-01-25.

Wireless intercom system and group pairing method of wireless intercom system

Номер патента: EP3869839A1. Автор: Sung Won Yoon. Владелец: SENA Tech Inc. Дата публикации: 2021-08-25.

Memory device included in memory system and method for detecting fail memory cell thereof

Номер патента: US20240079074A1. Автор: Junyoung Ko,Jungmin Bak,Changhwi Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-03-07.

System and method for generating position error signals within a computer memory device

Номер патента: WO1998054709A1. Автор: Karl A. Belser. Владелец: Seagate Technology, Inc.. Дата публикации: 1998-12-03.

Apparatus and method for programming and verifying data in non-volatile memory device

Номер патента: US11894076B2. Автор: Hyung Jin Choi. Владелец: SK hynix Inc. Дата публикации: 2024-02-06.

Non-volatile memory device, controller and memory system

Номер патента: US20230395111A1. Автор: Jaeyong Jeong,Beomkyu Shin,Kuiyon Mun. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-12-07.

Flash memory device and flash memory system including the same

Номер патента: US20090213659A1. Автор: Seok-Cheon Kwon,Kyeong-Han Lee,Dong-yang Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2009-08-27.

An interactive real time system and real time method of use thereof in conveyance industry segments

Номер патента: AU2018309617A1. Автор: Vince Coletti,Alexis DaCosta. Владелец: Individual. Дата публикации: 2020-02-13.

Logistics device, logistics control system, and theft prevention method of the same

Номер патента: US11995963B2. Автор: Hang Seok Choi,Byung Kang Park. Владелец: HYUNSUNG CO Ltd. Дата публикации: 2024-05-28.

Wireless intercom system and group pairing method of wireless intercom system

Номер патента: US11943394B2. Автор: Sung Won Yoon. Владелец: SENA TECHNOLOGIES Inc. Дата публикации: 2024-03-26.

System and method for optimization of operating system restore

Номер патента: US20160364144A1. Автор: Beloussov Serguei S,Maxim V. Lyadvinsky,Mark Shmulevich,Anatoly Stupak,Andrey Redko,Ivan Kukhta,Stanislav M. Protassov. Владелец: Acronis International GmbH. Дата публикации: 2016-12-15.

Memory system

Номер патента: US11921600B2. Автор: Katsuya Ohno. Владелец: Kioxia Corp. Дата публикации: 2024-03-05.

Memory system

Номер патента: US20210342242A1. Автор: Katsuya Ohno. Владелец: Kioxia Corp. Дата публикации: 2021-11-04.

Memory system and operation method of the same

Номер патента: US09990312B2. Автор: Jung-Hyun Kwon,Yong-Ju Kim,Sung-Eun Lee,Jing-Zhe Xu. Владелец: SK hynix Inc. Дата публикации: 2018-06-05.

Power loss test engine device and method

Номер патента: US20200202971A1. Автор: Claudio Giaccio,Ferdinando Pascale,Erminio Di Martino,Raffaele Mastrangelo,Ferdinando D'Alessandro,Andrea Castaldo,Cristiano Castellano. Владелец: Micron Technology Inc. Дата публикации: 2020-06-25.

Apparatus and method for performing recovery operation of memory system

Номер патента: US20200159455A1. Автор: Jong-Min Lee. Владелец: SK hynix Inc. Дата публикации: 2020-05-21.

Apparatus and method for performing recovery operation of memory system

Номер патента: US20210382660A1. Автор: Jong-Min Lee. Владелец: SK hynix Inc. Дата публикации: 2021-12-09.

Memory device using graphene as charge-trap layer and method of operating the same

Номер патента: US09525076B2. Автор: Hyun-Jong Chung,Jae-ho Lee,Seong-Jun Park,Kyung-Eun Byun,David Seo,Hyun-Jae Song,Jin-Seong Heo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-12-20.

Memory system and operation method of the same

Номер патента: US20170329726A1. Автор: Jung-Hyun Kwon,Yong-Ju Kim,Sung-Eun Lee,Jing-Zhe Xu. Владелец: SK hynix Inc. Дата публикации: 2017-11-16.

Memory system and method of operating memory system

Номер патента: US20240241646A1. Автор: Hyunseok Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-18.

Nonvolatile memory device for performing a partial read operation and a method of reading the same

Номер патента: US20190206500A1. Автор: Yongsung CHO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-07-04.

Semiconductor memory device with security function and control method thereof

Номер патента: US20110182101A1. Автор: Ji Hyae Bae. Владелец: Hynix Semiconductor Inc. Дата публикации: 2011-07-28.

Storage device supporting multi-streaming and method of controlling operation of nonvolatile memory device

Номер патента: US20200393992A1. Автор: Kyungduk Lee,Jinwoo Lim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-12-17.

Memory system and operating method of memory system

Номер патента: US12093554B2. Автор: Hee Chan Shin,Young Ho AHN,Jae Gwang Lee,Gi Gyun Yoo. Владелец: SK hynix Inc. Дата публикации: 2024-09-17.

Method of identifying information related to an eye open monitor (EOM) operation performed in a memory device, and memory system performing the method

Номер патента: US12067292B2. Автор: Won Ho Kang,Chang Min Jeon,Young San KANG,Sung Tack HONG,Kwang Won Park,YeJin Cho,Hyunsoo Shim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-08-20.

Storage controller, storage device, storage system and method of operating the storage controller

Номер патента: US09846542B2. Автор: Jung-Min Seo,Ju-Pyung Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-12-19.

Semiconductor memory device and operating method for the same

Номер патента: US20140189283A1. Автор: Sang-Oh LIM. Владелец: SK hynix Inc. Дата публикации: 2014-07-03.

Idle mode temperature control for memory systems

Номер патента: US12039189B2. Автор: Francesco Basso,Francesco Falanga,Massimo Iaculo,Antonino Pollio. Владелец: Micron Technology Inc. Дата публикации: 2024-07-16.

SEMICONDUCTOR MEMORY DEVICE, CONTROLLER, AND MEMORY SYSTEM HAVING SEMICONDUCTOR MEMORY DEVICE AND CONTROLLER

Номер патента: US20220083253A1. Автор: KWON Jae Kwan. Владелец: . Дата публикации: 2022-03-17.

Operating method of memory system including memory controller and nonvolatile memory device

Номер патента: US20220208271A1. Автор: Joonsuc Jang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-06-30.

System and method for polling the status of memory devices

Номер патента: US09910600B2. Автор: Matthew Stephens,Neil Buxton. Владелец: Toshiba Memory Corp. Дата публикации: 2018-03-06.

Memory system and method of operating the same

Номер патента: US11829645B2. Автор: Bongsoon LIM,Yonghyuk Choi,Jaeduk Yu. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-11-28.

Memory system and method of operating the same

Номер патента: US20220156014A1. Автор: Bongsoon LIM,Yonghyuk Choi,Jaeduk Yu. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-05-19.

Memory system and operating method of memory system

Номер патента: US12124718B2. Автор: Heung Tae Jin. Владелец: SK hynix Inc. Дата публикации: 2024-10-22.

Garbage collection adapted to memory device life expectancy

Номер патента: US11693769B2. Автор: Qing Liang,Deping He,David Aaron Palmer. Владелец: Micron Technology Inc. Дата публикации: 2023-07-04.

Apparatus and method for implementing a multi-level memory hierarchy

Номер патента: US09600416B2. Автор: Kai Cheng,David J. Zimmerman,Dimitrios Ziakas,Raj K. Ramanujan,Rajat Agarwal,Glenn J. Hinton,Muthukumar P. SWAMINATHAN,Taarinya POLEPEDDI,Camille C. Raad,Mohan J. Kumar,Bassam N. Coury. Владелец: Intel Corp. Дата публикации: 2017-03-21.

Semiconductor memory device, controller and memory system having the same

Номер патента: KR20220036603A. Автор: 권재관. Владелец: 에스케이하이닉스 주식회사. Дата публикации: 2022-03-23.

Storage device and method of operating of the storage device

Номер патента: US20210096773A1. Автор: Kyu Tae Park,Jin Yong Seong. Владелец: SK hynix Inc. Дата публикации: 2021-04-01.

Storage device supporting multi-streaming and method of controlling operation of nonvolatile memory device

Номер патента: US11314452B2. Автор: Kyungduk Lee,Jinwoo Lim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-04-26.

Memory system with variable length page stripes including data protection information

Номер патента: US09983927B2. Автор: Charles J. Camp,Holloway H. Frost,James A. Fuxa. Владелец: International Business Machines Corp. Дата публикации: 2018-05-29.

Memory system with switchable operating bands

Номер патента: US09898218B2. Автор: Kyu-Hyoun Kim,Hillery C. Hunter,Michael B. Healy. Владелец: International Business Machines Corp. Дата публикации: 2018-02-20.

Reduced-voltage operation of a memory device

Номер патента: US20220415410A1. Автор: Vipul Patel,Ezra E. Hartz. Владелец: Micron Technology Inc. Дата публикации: 2022-12-29.

Memory device configuration commands

Номер патента: US09940052B2. Автор: Umberto Siciliani,Anna Chiara Siviero,Andrea Smaniotto. Владелец: Micron Technology Inc. Дата публикации: 2018-04-10.

Memory system and operating method thereof

Номер патента: US20240184487A1. Автор: WooSeong Cheong,Kyungeun CHOI. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-06-06.

Memory system and operating method thereof

Номер патента: EP4379561A1. Автор: WooSeong Cheong,Kyungeun CHOI. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-06-05.

A secure non-volatile memory device and a method of protecting data therein

Номер патента: EP2074628A2. Автор: Guoqiao Tao. Владелец: NXP BV. Дата публикации: 2009-07-01.

A secure non-volatile memory device and a method of protecting data therein

Номер патента: WO2008038242A2. Автор: Guoqiao Tao. Владелец: NXP B.V.. Дата публикации: 2008-04-03.

Method of measuring refractive index of semiconductor memory device and method of classifying product group using the same

Номер патента: US20240331788A1. Автор: Ho Jung KANG,Tae Un Youn,Nam Cheol JEON. Владелец: SK hynix Inc. Дата публикации: 2024-10-03.

Semiconductor memory device, method of performing a refresh for semiconductor memory device and refresh counter in semiconductor memory device

Номер патента: US09601179B2. Автор: Young-Yong Byun,Whi-Young Bae. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-03-21.

Semiconductor memory device and file memory system

Номер патента: US20150279456A1. Автор: Haruki Toda. Владелец: Toshiba Corp. Дата публикации: 2015-10-01.

Method of erasing data of nonvolatile semiconductor memory unit

Номер патента: US20040125656A1. Автор: Tomoshi Futatsuya,Takashi Hayasaka,Shinichi Mizoguchi. Владелец: Renesas Technology Corp. Дата публикации: 2004-07-01.

Memory device including voltage regions and method of operating same

Номер патента: SG10201804015PA. Автор: Oh Tae-Young,Kim Young-Hwa,CHO SEOK-JIN,JANG JIN-HOON. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-02-27.

Method of erasing data of nonvolatile semiconductor memory unit

Номер патента: US6831864B2. Автор: Tomoshi Futatsuya,Takashi Hayasaka,Shinichi Mizoguchi. Владелец: Renesas Technology Corp. Дата публикации: 2004-12-14.

Memory devices that support selective setting data update and methods of operating same

Номер патента: US20240231697A1. Автор: KeeHo JUNG,Suchang Jeon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-11.

Nonvolatile memory devices with common source line voltage compensation and methods of operating the same

Номер патента: US8446769B2. Автор: BoGeun Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2013-05-21.

Semiconductor memory device and method of performing setting operation in semiconductor memory device

Номер патента: US9312003B2. Автор: Yoshihisa Iwata,Chika Tanaka,Reika Ichihara. Владелец: Toshiba Corp. Дата публикации: 2016-04-12.

Memory system, memory controller and method of operating the same

Номер патента: US20210303464A1. Автор: Joung Young LEE. Владелец: SK hynix Inc. Дата публикации: 2021-09-30.

Semiconductor memory device for independently controlling internal supply voltages and method of using the same

Номер патента: US7639547B2. Автор: Young-Hyun Jun,Jong-Hyoung Lim,Jang-Won Moon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2009-12-29.

Non-volatile semiconductor memory device and method of controlling the non-volatile semiconductor memory device

Номер патента: US20140269097A1. Автор: Yoshikazu Harada,Masahiro Yoshihara,Hiroyuki Kaga,Naofumi ABIKO. Владелец: Toshiba Corp. Дата публикации: 2014-09-18.

Semiconductor memory array partitioned into memory blocks and sub-blocks and method of addressing

Номер патента: US6026021A. Автор: Loc B. Hoang. Владелец: Winbond Electronics Corp America. Дата публикации: 2000-02-15.

Apparatus and method for improving dynamic refresh in a semiconductor memory device by temperature measurement

Номер патента: EP1784836A1. Автор: Perry Willmann Remaklus, Jr.,Robert Michael Walker. Владелец: Qualcomm Inc. Дата публикации: 2007-05-16.

Decoding drive circuit and method therefor, word line decoding circuit and semiconductor memory

Номер патента: EP4243020A1. Автор: Weibing SHANG,Minghao LI,Xianjun Wu. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-09-13.

Memory controller, method of controlling the same, and semiconductor memory device having both

Номер патента: US20160196209A1. Автор: Jungug Kim. Владелец: SK hynix Inc. Дата публикации: 2016-07-07.

Memory device including a plurality of power rails and method of operating the same

Номер патента: SG10201806160YA. Автор: Oh Tae-Young,Kim Young-Hwa,JANG JIN-HUN,CHO SEOK-JIN,HA KYUNG-SOO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-02-27.

Memory system, memory controller, and method for operating memory system

Номер патента: US11960888B2. Автор: Seok-jun Lee. Владелец: SK hynix Inc. Дата публикации: 2024-04-16.

Memory system, memory controller and operating method of the memory system for controlling garbage collection

Номер патента: US20230297502A1. Автор: Gi Pyo UM. Владелец: SK hynix Inc. Дата публикации: 2023-09-21.

Methods of programming memory cells in non-volatile memory devices

Номер патента: US09818477B2. Автор: Jae-Hong Kim,Jin-Man Han,Young-Seop Shim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-11-14.

Operating method of nonvolatile memory device and nonvolatile memory system

Номер патента: US09785379B2. Автор: Junjin Kong,Hong Rak Son,Eun Chu Oh,Jongha KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-10-10.

Memory system, memory controller, and operation method of memory system for loading and updating mapping information to host memory area

Номер патента: US12072809B2. Автор: Kyu Ho Choi. Владелец: SK hynix Inc. Дата публикации: 2024-08-27.

Systems and methods for compressing data in non-volatile semiconductor memory drives

Номер патента: WO2011028802A1. Автор: Xueshi Yang,Gregory Burd. Владелец: MARVELL WORLD TRADE LTD.. Дата публикации: 2011-03-10.

Memory system, memory controller and operating method of the memory system operating as read boost mode

Номер патента: US12099751B2. Автор: Eu Joon BYUN. Владелец: SK hynix Inc. Дата публикации: 2024-09-24.

Allocating variable media types of memory devices in a memory system

Номер патента: US20190332290A1. Автор: Michael B. Danielson,Paul A. Suhler,James H. Meeker. Владелец: Micron Technology Inc. Дата публикации: 2019-10-31.

Nonvolatile memory devices including multiple user-selectable program modes and related methods of operation

Номер патента: US20080172520A1. Автор: Bong-ryeol Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2008-07-17.

Non-volatile memory devices and systems with volatile memory features and methods for operating the same

Номер патента: EP3785267A1. Автор: Jonathan S. Parry,George B. Raad,Timothy B. Cowles,James S. Rehmeyer. Владелец: Micron Technology Inc. Дата публикации: 2021-03-03.

Memory system, memory controller, and operation method of memory system

Номер патента: US20210389903A1. Автор: Seung Gu JI,Hyung Min Lee. Владелец: SK hynix Inc. Дата публикации: 2021-12-16.

Allocating variable media types of memory devices in a memory system

Номер патента: US20210173574A1. Автор: Michael B. Danielson,Paul A. Suhler,James H. Meeker. Владелец: Micron Technology Inc. Дата публикации: 2021-06-10.

Method of initializing and programing 3d non-volatile memory device

Номер патента: US20170133095A1. Автор: Sang Ho Lee,Byung Gook Park,Dae Woong KWON,Do Bin KIM. Владелец: SK hynix Inc. Дата публикации: 2017-05-11.

Memory system, memory controller and method for operating memory system

Номер патента: US20210004330A1. Автор: Byung Jun Kim. Владелец: SK hynix Inc. Дата публикации: 2021-01-07.

Memory device having improved program and erase operations and operating method of the memory device

Номер патента: US20200211650A1. Автор: Sang Heon Lee,Keon Soo Shim,Byung In Lee,Hee Joung PARK,Jae Il TAK. Владелец: SK hynix Inc. Дата публикации: 2020-07-02.

Method of initializing and programing 3d non-volatile memory device

Номер патента: US20180197615A1. Автор: Sang Ho Lee,Byung Gook Park,Dae Woong KWON,Do Bin KIM. Владелец: SK hynix Inc. Дата публикации: 2018-07-12.

Method of initializing and programming 3D non-volatile memory device

Номер патента: US9947413B2. Автор: Sang Ho Lee,Byung Gook Park,Dae Woong KWON,Do Bin KIM. Владелец: SK hynix Inc. Дата публикации: 2018-04-17.

Data classification method using quantum computer, quantum computer system, and classifier training method of quantum computer system

Номер патента: US12099573B2. Автор: Shengyu ZHANG,Changyu HSIEH,Songlian OU. Владелец: Tencent Technology Shenzhen Co Ltd. Дата публикации: 2024-09-24.

Resistive memory device and a memory system including the same

Номер патента: US20170309330A1. Автор: Suk-Soo Pyo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-10-26.

Resistive memory device and a memory system including the same

Номер патента: US09899081B2. Автор: Suk-Soo Pyo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-02-20.

Circuit and method for controlling standby leakage current in random access memory devices

Номер патента: US20120002497A1. Автор: Chung Zen Chen. Владелец: Elite Semiconductor Memory Technology Inc. Дата публикации: 2012-01-05.

Mass storage device memory encryption methods, systems, and apparatus

Номер патента: EP2583212A2. Автор: Harm Braams. Владелец: Vasco Data Security International Gmbh. Дата публикации: 2013-04-24.

Memory system, memory controller, and operation method of memory controller for scheduling commands based on power consumption

Номер патента: US11461022B2. Автор: Jung Hyun Kwon,Won Gyu SHIN. Владелец: SK hynix Inc. Дата публикации: 2022-10-04.

Memory system, memory controller, and operation method of memory controller

Номер патента: US20220113882A1. Автор: Jung Hyun Kwon,Won Gyu SHIN. Владелец: SK hynix Inc. Дата публикации: 2022-04-14.

Mass storage device memory encryption methods, systems, and apparatus

Номер патента: US09910996B2. Автор: Harm Braams. Владелец: Vasco Data Security Inc. Дата публикации: 2018-03-06.

Artificial intelligence core, artificial intelligence core system, and loading/storing method of artificial intelligence core system

Номер патента: EP4206999A1. Автор: Jin Seok Kim,Dong Han Kim,Kyeong Ryeol BONG,Jin Wook Oh. Владелец: Rebellions Inc. Дата публикации: 2023-07-05.

Apparatus and method for programming and verifying data in a nonvolatile memory device

Номер патента: US20240177773A1. Автор: Hyung Jin Choi,Gwi Han KO. Владелец: SK hynix Inc. Дата публикации: 2024-05-30.

Apparatus and method for checking an error of a non-volatile memory device in a memory system

Номер патента: US11941289B2. Автор: Jung Ae Kim,Jee Yul KIM. Владелец: SK hynix Inc. Дата публикации: 2024-03-26.

Memory system, memory controller and operating method of the memory system operating as read boost mode

Номер патента: US20230376246A1. Автор: Eu Joon BYUN. Владелец: SK hynix Inc. Дата публикации: 2023-11-23.

Domain wall movement memory device having artificial antiferromagnetism or artificial ferrimagnetism and method of forming the same

Номер патента: WO2008143381A1. Автор: Chun Yeol You. Владелец: INHA Industry Partnership Institute. Дата публикации: 2008-11-27.

Thin film magnetic memory device capable of stably writing/reading data and method of fabricating the same

Номер патента: US20040052107A1. Автор: Jun Ohtani. Владелец: Mitsubishi Electric Corp. Дата публикации: 2004-03-18.

Apparatus and method for booting a computing device from a nand memory device

Номер патента: WO2007130932A2. Автор: Edward Geiger,Nicolas Dade. Владелец: Symbol Technologies, Inc.. Дата публикации: 2007-11-15.

Memory system, memory controller, and operation method of memory system

Номер патента: US20210334009A1. Автор: In Jung. Владелец: SK hynix Inc. Дата публикации: 2021-10-28.

Method of counting number of cells in nonvolatile memory device and nonvolatile memory device performing the same

Номер патента: US20220093160A1. Автор: Minseok Kim,Hyunggon KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-03-24.

Methods of enhancing speed of reading data from memory device

Номер патента: EP4235672A3. Автор: Li Xiang,Ke Liang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-10-18.

Method of providing an operating voltage in a memory device and a memory controller for the memory device

Номер патента: US20120120727A1. Автор: Moo Sung Kim,Wook Ghee Hahn. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2012-05-17.

Method of providing an operating voltage in a memory device and a memory controller for the memory device

Номер патента: US8441856B2. Автор: Moo Sung Kim,Wook Ghee Hahn. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2013-05-14.

Methods of enhancing speed of reading data from memory device

Номер патента: EP4235672A2. Автор: Li Xiang,Ke Liang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-08-30.

Methods of enhancing speed of reading data from memory device

Номер патента: US20210166769A1. Автор: Li Xiang,Ke Liang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-06-03.

Methods of enhancing speed of reading data from memory device

Номер патента: EP3915115A1. Автор: Li Xiang,Ke Liang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-12-01.

Memory device including three-dimensional racetrack and operating method thereof

Номер патента: US20240079040A1. Автор: Youngnam HWANG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-03-07.

Methods of enhancing speed of reading data from memory device

Номер патента: US20210280258A1. Автор: Li Xiang,Ke Liang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-09-09.

Circuit and method for controlling standby leakage current in random access memory devices

Номер патента: US20120002497A1. Автор: Chung Zen Chen. Владелец: Elite Semiconductor Memory Technology Inc. Дата публикации: 2012-01-05.

Circuit and method for controlling standby leakage current in random access memory devices

Номер патента: US8199593B2. Автор: Chung Zen Chen. Владелец: Elite Semiconductor Memory Technology Inc. Дата публикации: 2012-06-12.

Multi-node storage system and queue control method of multi-node storage system

Номер патента: US20200174673A1. Автор: Atsushi Sato,Hajime Ikeda,Takafumi Maruyama. Владелец: HITACHI LTD. Дата публикации: 2020-06-04.

Data processing system and memory management method of data processing system

Номер патента: US20240095179A1. Автор: Dimin Niu,Hongzhong Zheng,Shuangchen Li,Tianchan GUAN,Yijin GUAN. Владелец: Alibaba China Co Ltd. Дата публикации: 2024-03-21.

Storage system and data management method of storage system

Номер патента: US11073997B2. Автор: Yuki Kuroda,Kozue Fujii,Yoshio SONOKAWA,Hirokazu Ogasawara. Владелец: HITACHI LTD. Дата публикации: 2021-07-27.

Memory device with flexible data transfer rate interface and method thereof

Номер патента: US20170083439A1. Автор: Kuen-Long Chang,Ken-Hui Chen,Su-Chuch LO,Chao Hsin LIN. Владелец: Macronix International Co Ltd. Дата публикации: 2017-03-23.

Mass storage device memory encryption methods, systems, and apparatus

Номер патента: WO2011159918A2. Автор: Harm Braams. Владелец: Vasco Data Security International Gmbh. Дата публикации: 2011-12-22.

Apparatus and method for programming and verifying data in non-volatile memory device

Номер патента: US20240170077A1. Автор: Hyung Jin Choi. Владелец: SK hynix Inc. Дата публикации: 2024-05-23.

Device for generating verification vector for circuit design verification, circuit design system, and reinforcement learning method of the device and the circuit design system

Номер патента: US11861280B2. Автор: Kwang-Il Park,Tae-Ho Lee,Jeong-Hoon Ko,Youn-Sik Park,Seung-ju Kim,Chang-Wook Jeong,Joon-Wan Chai,Jun-Haeng Lee,Hyun-Sun Park,In HUH,Young-Min Oh,Hyo-Jin Choi. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-01-02.

Device for generating verification vector for circuit design verification, circuit design system, and reinforcement learning method of the device and the circuit design system

Номер патента: US20240086603A1. Автор: Tae-Ho Lee,Jeong-Hoon Ko,Kwang-II Park,Youn-Sik Park,Seung-ju Kim,Chang-Wook Jeong,Joon-Wan Chai,Jun-Haeng Lee,Hyun-Sun Park,In HUH,Young-Min Oh,Hyo-Jin Choi. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-03-14.

Controlling method of a memory card

Номер патента: US20210026765A1. Автор: Kuniaki Ito,Takashi Wakutsu,Shuichi Sakurai,Yasufumi Tsumagari. Владелец: Toshiba Memory Corp. Дата публикации: 2021-01-28.

Controlling method of a memory card

Номер патента: US20240061771A1. Автор: Kuniaki Ito,Takashi Wakutsu,Shuichi Sakurai,Yasufumi Tsumagari. Владелец: Kioxia Corp. Дата публикации: 2024-02-22.

Controlling method of a memory card

Номер патента: US12135641B2. Автор: Kuniaki Ito,Takashi Wakutsu,Shuichi Sakurai,Yasufumi Tsumagari. Владелец: Kioxia Corp. Дата публикации: 2024-11-05.

Semiconductor memory device and memory system having the same

Номер патента: US20200273528A1. Автор: Dae Seok Byeon,Young Sun Min,Young Ho Na. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-08-27.

Memory system capable of controlling wireless communication function

Номер патента: US20160299696A1. Автор: Kuniaki Ito,Takashi Wakutsu,Shuichi Sakurai,Yasufumi Tsumagari. Владелец: Toshiba Corp. Дата публикации: 2016-10-13.

Memory system capable of controlling wireless communication function

Номер патента: US20170344471A1. Автор: Kuniaki Ito,Takashi Wakutsu,Shuichi Sakurai,Yasufumi Tsumagari. Владелец: Toshiba Memory Corp. Дата публикации: 2017-11-30.

Memory system capable of controlling wireless communication function

Номер патента: US20190272228A1. Автор: Kuniaki Ito,Takashi Wakutsu,Shuichi Sakurai,Yasufumi Tsumagari. Владелец: Toshiba Memory Corp. Дата публикации: 2019-09-05.

Memory system capable of controlling wireless communication function

Номер патента: US09760483B2. Автор: Kuniaki Ito,Takashi Wakutsu,Shuichi Sakurai,Yasufumi Tsumagari. Владелец: Toshiba Memory Corp. Дата публикации: 2017-09-12.

Memory system capable of controlling wireless communication function

Номер патента: US09501399B2. Автор: Kuniaki Ito,Takashi Wakutsu,Shuichi Sakurai,Yasufumi Tsumagari. Владелец: Toshiba Corp. Дата публикации: 2016-11-22.

Memory device comprising electrically floating body transistor

Номер патента: US20230326516A1. Автор: Yuniarto Widjaja,Jin-Woo Han,Neal Berger. Владелец: Zeno Semiconductor Inc. Дата публикации: 2023-10-12.

Memory device comprising electrically floating body transistor

Номер патента: US12094526B2. Автор: Yuniarto Widjaja,Jin-Woo Han,Neal Berger. Владелец: Zeno Semiconductor Inc. Дата публикации: 2024-09-17.

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Номер патента: US09569371B2. Автор: Jun-Jin Kong,Pil-Sang Yoon,Chang-kyu Seol,Seong-Hyeog CHOI,Hong-rak Son. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-02-14.

Memory device comprising electrically floating body transistor

Номер патента: US09496053B2. Автор: Yuniarto Widjaja,Jin-Woo Han,Neal Berger. Владелец: Zeno Semiconductor Inc. Дата публикации: 2016-11-15.

Controlling method of a memory card

Номер патента: US11836075B2. Автор: Kuniaki Ito,Takashi Wakutsu,Shuichi Sakurai,Yasufumi Tsumagari. Владелец: Kioxia Corp. Дата публикации: 2023-12-05.

Memory system capable of controlling wireless communication function

Номер патента: US20180322046A1. Автор: Kuniaki Ito,Takashi Wakutsu,Shuichi Sakurai,Yasufumi Tsumagari. Владелец: Toshiba Memory Corp. Дата публикации: 2018-11-08.

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Номер патента: EP4460009A1. Автор: Tetsugoro Ihara. Владелец: Sony Group Corp. Дата публикации: 2024-11-06.

Software update system and method for portable ota supporting mobile terminal

Номер патента: RU2419839C2. Автор: Сунг Дзо ОХ. Владелец: САМСУНГ ЭЛЕКТРОНИКС КО., ЛТД.. Дата публикации: 2011-05-27.

Method of operating nonvolatile memory device, nonvolatile memory device and memory controller performing the same

Номер патента: US12033706B2. Автор: Byungchul Jang,Joonsung Lim,Junyeong Seok,Younggul SONG,Eunchu Oh. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-09.

Semiconductor memory device for controlling operation of delay-locked loop circuit

Номер патента: US20120218848A1. Автор: Seong-Jin Jang,Young-uk Chang,Jun-Bae Kim,Sin-Ho KIM. Владелец: Individual. Дата публикации: 2012-08-30.

Eyezon system and method of obtaining advice on product or service on demand in online broadcast

Номер патента: RU2739706C1. Автор: Кнези Драгорад,Любохинец Антон,Климук Владислав. Владелец: Общество с ограниченной ответственностью "Репорт". Дата публикации: 2020-12-28.

Magnetic tunneling junction device, memory device including the same, and method of manufacturing the magnetic tunneling junction device

Номер патента: EP4053925A3. Автор: SEUNGJAE LEE,Naoki Hase,Seonggeon Park,Kwangseok KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-04-19.

Vehicle user interface systems and methods

Номер патента: EP2229576A2. Автор: Rodger W. Eich,Richard J. Chutorash,Jeffrey Golden,Michael J. Sims,Philip J. Vanderwall,Pascal Six,Elisabet Anderson. Владелец: Johnson Controls Technology Co. Дата публикации: 2010-09-22.

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Номер патента: EP4053925A2. Автор: SEUNGJAE LEE,Naoki Hase,Seonggeon Park,Kwangseok KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-09-07.

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Номер патента: KR20220035541A. Автор: 장정식. Владелец: 에스케이하이닉스 주식회사. Дата публикации: 2022-03-22.

Structurally-Embedded Construction, Design, and Maintenance Record Data Management System and Related Method

Номер патента: US20140330788A1. Автор: Taeho Um. Владелец: Individual. Дата публикации: 2014-11-06.

Integrated circuit, memory device and method of manufacturing the same

Номер патента: US12063785B2. Автор: Chih-Wei Hung,Kuo-Pin Chang,Chien Hung Liu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-13.

Communication system and method of autonomous vehicle and terminal device

Номер патента: US20200077242A1. Автор: Lei Fang,JI Tao,Yifeng Shi,Xing Hu,Haisong Wang. Владелец: Baidu Online Network Technology Beijing Co Ltd. Дата публикации: 2020-03-05.

Communication system and method of autonomous vehicle and terminal device

Номер патента: EP3618470A2. Автор: Lei Fang,JI Tao,Yifeng Shi,Xing Hu,Haisong Wang. Владелец: Baidu Online Network Technology Beijing Co Ltd. Дата публикации: 2020-03-04.

System and method for arbitrating encrypted electronic transactions among intermediary and authoring users only when an interaction occurs between authoring and candidate users who was exposed by the intermediary user to data published by authoring user

Номер патента: US20170364980A1. Автор: Robert William Archibald,Frederick Harold Reffsin,Brian Ross Lurie. Владелец: Aliro Group. Дата публикации: 2017-12-21.

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Номер патента: US20140269120A1. Автор: NA Taesik. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2014-09-18.

Delay-locked loop circuit with variable bias voltages and method of clock synchronization for a semiconductor memory device

Номер патента: US20070018702A1. Автор: Chan-Yong Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2007-01-25.

Nonvolatile memory device, storage device including nonvolatile memory device, and operating method of storage device

Номер патента: US20240321366A1. Автор: Kun-Woo Song,Jonghwa Kim,Kyungyong Jeoung. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-09-26.

Inductive energy harvesting and signal development for a memory device

Номер патента: US20220037920A1. Автор: Dmitri A. Yudanov. Владелец: Micron Technology Inc. Дата публикации: 2022-02-03.

Nonvolatile memory device and method of operating and fabricating the same

Номер патента: US8004906B2. Автор: Sung-Il Park,Young-Gu Jin,Jong-Seob Kim,Jai-Kwang Shin,Jae-woong Hyun,Ki-ha Hong,Sung-Hoon Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2011-08-23.

Clock generation circuit, control method of clock generation circuit and semiconductor memory device

Номер патента: US20020008558A1. Автор: Hideo Chigasaki,Yuichi Okuda,Hiroki Miyashita. Владелец: Hitachi Device Engineering Co Ltd. Дата публикации: 2002-01-24.

RESISTIVE MEMORY DEVICE AND RESISTIVE MEMORY SYSTEM INCLUDING A PLURALITY OF LAYERS, AND METHOD OF OPERATING THE SYSTEM

Номер патента: US20160172034A1. Автор: Kong Jun-Jin,Son Hong-rak,OH EUN-CHU,YOON PIL-SANG. Владелец: . Дата публикации: 2016-06-16.

A memory device and method of performing access operations within such a memory device

Номер патента: GB201412312D0. Автор: . Владелец: Advanced Risc Machines Ltd. Дата публикации: 2014-08-27.

Non-volatile content addressable memory device having simple cell configuration and operating method of the same

Номер патента: US20240265967A1. Автор: Seunggeol NAM,Jinseong Heo,Taehwan MOON,Hagyoul BAE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-08-08.

Configurable resistivity for lines in a memory device

Номер патента: US12040014B2. Автор: Jian Jiao,Michael P. O'Toole,Jason R. Johnson,William L. Cooper,Koushik Banerjee,Isaiah O. Gyan,Robert Cassel. Владелец: Micron Technology Inc. Дата публикации: 2024-07-16.

Source structure of three-dimensional memory device and method for forming the same

Номер патента: EP4258843A3. Автор: Qian Tao,Zhenyu Lu,Simon Shi-ning Yang,Jun Chen,Yushi Hu,Steve Weiyi Yang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-08-07.

Memory device

Номер патента: US20110296235A1. Автор: Masaru Ogawa,Tarou Iwashiro. Владелец: Individual. Дата публикации: 2011-12-01.

Memory system and operating method of memory system

Номер патента: US12050533B2. Автор: In Jong Jang,Kyu Min LEE. Владелец: SK hynix Inc. Дата публикации: 2024-07-30.

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Номер патента: US20220317900A1. Автор: Deping He,David Aaron Palmer. Владелец: Micron Technology Inc. Дата публикации: 2022-10-06.

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Номер патента: US11966600B2. Автор: Deping He,David Aaron Palmer. Владелец: Micron Technology Inc. Дата публикации: 2024-04-23.

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Номер патента: US12141029B2. Автор: Scott E. Schaefer,Aaron P. Boehm. Владелец: Lodestar Licensing Group LLC. Дата публикации: 2024-11-12.

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Номер патента: US20180150354A1. Автор: Ju Pyung LEE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-05-31.

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Номер патента: EP4242768A1. Автор: Yakup Bayram. Владелец: PANERATECH Inc. Дата публикации: 2023-09-13.

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Номер патента: RU2671939C2. Автор: Джанет Л. ГЕЛБАХ,Джулиус П. ЗОДДА,Катрин М. ХАНТЕР,Рольф Э. СВЕНСОН,Аарон М. ФОНТЭН,Стефен Э. ХАЙДЕМ,Патрик М. МАКДОНАЛД. Владелец: Бракко Дайэгностикс Инк.. Дата публикации: 2018-11-07.

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Номер патента: US20230289625A1. Автор: Yakup Bayram. Владелец: PANERATECH Inc. Дата публикации: 2023-09-14.

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Номер патента: US12057849B2. Автор: HAO Zhang,Pengfei QU,Botao Wang,Siyu Tian,Genyuan Yang. Владелец: CHINA ELECTRONICS TECHNOLOGY GROUP Corp NO 44 RESEARCH INSTITUTE. Дата публикации: 2024-08-06.

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Номер патента: US20240344311A1. Автор: Rui Liu,GuangQi Xu. Владелец: Zhejiang Ikahe Sanitary Ware Co ltd. Дата публикации: 2024-10-17.

Classified display system and classified display method of centralized market activity

Номер патента: US20240233217A1. Автор: Chih-Hung Chiu. Владелец: Individual. Дата публикации: 2024-07-11.

Frequency synthesis system and frequency generation method of microwave photons based on photoelectric synergy

Номер патента: US20240118136A1. Автор: HAO Zhang,Pengfei QU,Botao Wang,Siyu Tian,Genyuan Yang. Владелец: CHINA ELECTRONICS TECHNOLOGY GROUP Corp NO 44 RESEARCH INSTITUTE. Дата публикации: 2024-04-11.

Semiconductor memory device, memory system having semiconductor memory device, and method for testing memory system

Номер патента: US7634697B2. Автор: Jin-Soo Park,Dong-Jun Kim,Kae-Won Ha,Keun-Soo Jo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2009-12-15.

Semiconductor memory system having a data clock system for reliable high-speed data transfers

Номер патента: US20030137893A1. Автор: Louis Hsu,Jeremy Stephens,Li-Kong Wang,Daniel Storaska. Владелец: International Business Machines Corp. Дата публикации: 2003-07-24.

Semiconductor memory device having output driver for high frequency operation

Номер патента: US20040004893A1. Автор: Dong-Su Lee,Ki-whan Song,Ho-sung Song. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2004-01-08.

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Номер патента: US09715943B2. Автор: Yuming Zhu,Sai Zhang,Clive Bittlestone,Yunchen Qiu,Manish Goel. Владелец: Texas Instruments Inc. Дата публикации: 2017-07-25.

Semiconductor memory device with flash write mode of operation

Номер патента: US5003510A. Автор: Sachiko Kamisaki. Владелец: NEC Corp. Дата публикации: 1991-03-26.

Semiconductor memory device with memory cell including a charge storage layer and a control gate and method of controlling the same

Номер патента: US20080181022A1. Автор: Takahiro Suzuki,Tokumasa Hara,Shinya Fujisawa. Владелец: Individual. Дата публикации: 2008-07-31.

Distributed ledger appliance and methods of use

Номер патента: US12081672B2. Автор: Jonathan D. Harms. Владелец: Micron Technology Inc. Дата публикации: 2024-09-03.

Circuits and methods for providing page mode operation in semiconductor memory device having partial activation architecture

Номер патента: TW200407906A. Автор: Yun-sang Lee,Jung-Bae Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2004-05-16.

Data alignment circuit of a semiconductor memory device, a semiconductor memory device and a method of aligning data in a semiconductor memory device

Номер патента: US20180174636A1. Автор: Jung-hwan Choi,In-Dal Song,Jin-Seok Heo,Kyung-Soo Ha,Seong-Hwan Jeon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-06-21.

Circuits and methods for changing page length in a semiconductor memory device

Номер патента: TW200425162A. Автор: Yun-sang Lee,One-gyun La. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2004-11-16.

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Номер патента: KR100755369B1. Автор: 최정환. Владелец: 삼성전자주식회사. Дата публикации: 2007-09-04.

Memory device tester and method for testing reduced power states

Номер патента: US20020190708A1. Автор: Matthew Harrington,Van Huynh,Adin Hyslop. Владелец: Micron Technology Inc. Дата публикации: 2002-12-19.

Memory device tester and method for testing reduced power states

Номер патента: US20020149982A1. Автор: Matthew Harrington,Van Huynh,Adin Hyslop. Владелец: Micron Technology Inc. Дата публикации: 2002-10-17.

Memory device tester and method for testing reduced power states

Номер патента: US20020149981A1. Автор: Matthew Harrington,Van Huynh,Adin Hyslop. Владелец: Micron Technology Inc. Дата публикации: 2002-10-17.

Memory device tester and method for testing reduced power states

Номер патента: US6914843B2. Автор: Adin E. Hyslop,Matthew R. Harrington,Van C. Huynh. Владелец: Micron Technology Inc. Дата публикации: 2005-07-05.

Memory device tester and method for testing reduced power states

Номер патента: US6674677B2. Автор: Adin E. Hyslop,Matthew R. Harrington,Van C. Huynh. Владелец: Micron Technology Inc. Дата публикации: 2004-01-06.

Synchronous semiconductor memory device and method for controlling input circuit of synchronous semiconductor memory device

Номер патента: KR100676425B1. Автор: 이케다시니치로. Владелец: 후지쯔 가부시끼가이샤. Дата публикации: 2007-01-31.

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Номер патента: US09672894B2. Автор: Young-hun Kim,In-Chul Jeong. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-06-06.

Computer-based platforms and systems for asynchronous parallel network operations and methods of use thereof

Номер патента: WO2023150659A1. Автор: Kevin Lupowitz,Andre Frank,Eric Couillard,Sanjaya Kulkarni,Joe Grastara,Glendy Kam. Владелец: Tassat Group Inc.. Дата публикации: 2023-08-10.

Computer-based platforms and systems for asynchronous parallel network operations and methods of use thereof

Номер патента: WO2023150659A8. Автор: Kevin Lupowitz,Andre Frank,Eric Couillard,Sanjaya Kulkarni,Joe Grastara,Glendy Kam. Владелец: Tassat Group Inc.. Дата публикации: 2024-02-15.

Semiconductor memory cell multi-write avoidance encoding apparatus, systems and methods

Номер патента: US20170047130A1. Автор: Yuming Zhu,Sai Zhang,Clive Bittlestone,Yunchen Qiu,Manish Goel. Владелец: Texas Instruments Inc. Дата публикации: 2017-02-16.

System and method of leveraging gpu resources to increase performance of an interact-able content browsing service

Номер патента: US20170039985A1. Автор: Jung Chang Kuo. Владелец: Ubitus Inc. Дата публикации: 2017-02-09.

System and method of leveraging GPU resources to increase performance of an interact-able content browsing service

Номер патента: US09483996B2. Автор: Jung Chang Kuo,Wei Hao Peng. Владелец: Ubitus Inc. Дата публикации: 2016-11-01.

Nonvolatile semi-conductor memory device and method for calculating read voltage non-volatile semiconductor memory device

Номер патента: KR101516577B1. Автор: 김재홍,김용준,김종한,조경래,송승환,공준진. Владелец: 삼성전자주식회사. Дата публикации: 2015-05-06.

System and method for arbitrating encrypted electronic transactions among intermediary and authoring users only when an interaction occurs between authoring and candidate users who was exposed by the intermediary user to data published by authoring user

Номер патента: US20190220912A1. Автор: Robert William Archibald,Frederick Harold Reffsin,Brian Ross Lurie. Владелец: Aliro Group. Дата публикации: 2019-07-18.

Method of Reading Serial Data from Semiconductor Memory and Semiconductor Memory

Номер патента: KR960015575A. Автор: 요시유끼 이시다. Владелец: 후지쓰 가부시끼가이샤. Дата публикации: 1996-05-22.

Semiconductor memory, method of reading data from the semiconductor memory and writing it therein

Номер патента: JPH1166839A. Автор: Masahiro Tanaka,正浩 田中,久忠 宮武,Hisatada Miyatake,Yotaro Mori,陽太郎 森,記稔 山崎,Noritoshi Yamazaki. Владелец: International Business Machines Corp. Дата публикации: 1999-03-09.

Zero margin enable controlling apparatus and method of sense amplifier adapted to semiconductor memory device

Номер патента: US20020110031A1. Автор: Kwang-Jin Lee,Jong-Cheol Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2002-08-15.

Apparatus and method for controlling data output of a semiconductor memory device

Номер патента: US20040218429A1. Автор: Young-Bo Shim. Владелец: Hynix Semiconductor Inc. Дата публикации: 2004-11-04.

Circuit and method for controlling local data line in semiconductor memory device

Номер патента: TW200935444A. Автор: Sung-Soo Chi. Владелец: Hynix Semiconductor Inc. Дата публикации: 2009-08-16.

Synchronous semiconductor memory device of fast random cycle system and test method thereof

Номер патента: US20060034145A1. Автор: Kazuaki Kawaguchi,Kazuko Inuzuka. Владелец: Toshiba Corp. Дата публикации: 2006-02-16.

Nonvolatile memory device, memory system, and operating methods

Номер патента: EP1501100A3. Автор: Jung-Hoon Park,Soo-Hwan Choi. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2007-02-14.

Memory device sideband systems and methods

Номер патента: US20230317193A1. Автор: Joshua E. Alzheimer. Владелец: Micron Technology Inc. Дата публикации: 2023-10-05.

Systems and methods for memory serviceability mitigation

Номер патента: US20240078158A1. Автор: Vivek Viswanathan Iyer,Michael Wayne Arms,Balasingh Ponraj Samuel. Владелец: Dell Products LP. Дата публикации: 2024-03-07.

Systems and methods for performing node failovers

Номер патента: US10831623B1. Автор: Vaibhav Gupta,Mukund Agrawal,Tushar SHINDE,Rajesh Ghanekar,Sreeharsha Sarabu,Sandeep Jakka. Владелец: Veritas Technologies LLC. Дата публикации: 2020-11-10.

Configuration information backup in memory systems

Номер патента: US09817600B2. Автор: Ning Wu,Xin Guo,Robert E. Frickey,Hanmant P. Belgal. Владелец: Intel Corp. Дата публикации: 2017-11-14.

Systems and methods for memory serviceability mitigation

Номер патента: US12001302B2. Автор: Vivek Viswanathan Iyer,Michael Wayne Arms,Balasingh Ponraj Samuel. Владелец: Dell Products LP. Дата публикации: 2024-06-04.

Storage system and data management method of journaling and storing remote copies

Номер патента: US09983962B2. Автор: Toru Suzuki,Naoko Ikegaya,Hideo Saito,Azusa Jin,Kensuke Narita. Владелец: HITACHI LTD. Дата публикации: 2018-05-29.

Word line driver, semiconductor memory apparatus and test method using the same

Номер патента: US09620198B1. Автор: Sang Yun Nam. Владелец: SK hynix Inc. Дата публикации: 2017-04-11.

Semiconductor memory device

Номер патента: US20190122710A1. Автор: Hyun-Jin Shin. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-04-25.

Semiconductor memory apparatus, test apparatus therefor and method for relieving semiconductor memory apparatus from short circuit

Номер патента: US5343431A. Автор: Shozo Shirota,Takahiro Ohtsuka. Владелец: Mitsubishi Electric Corp. Дата публикации: 1994-08-30.

Semiconductor memory device and method of reading data from the semiconductor memory device

Номер патента: US20040257896A1. Автор: Seong-ho Jeung. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2004-12-23.

SEMICONDUCTOR MEMORY DEVICE AND A MEMORY SYSTEM HAVING THE SAME

Номер патента: US20210082478A1. Автор: CHO Jeonghyeon,JOO Seonghoon,CHOI llhan. Владелец: . Дата публикации: 2021-03-18.

Semiconductor memory device having write recovery time control circuit and method of controlling write recovery time of the same

Номер патента: KR100840692B1. Автор: 김경호. Владелец: 삼성전자주식회사. Дата публикации: 2008-06-24.

Apparatus comprising a quantum well device and method of operating the apparatus

Номер патента: US5023878A. Автор: Kurt Berthold,Anthony F. J. Levi. Владелец: AT&T Bell Laboratories Inc. Дата публикации: 1991-06-11.

Data loss protection for memory systems and devices

Номер патента: US20240296115A1. Автор: Amichai GIVANT,Stefano Amato,Shivananda Shetty,Yoav Yogev,Yair Sofer,Idan Koren,Itzic Cohen. Владелец: Infineon Technologies LLC. Дата публикации: 2024-09-05.

Data loss protection for memory systems and devices

Номер патента: WO2024186652A1. Автор: Amichai GIVANT,Stefano Amato,Shivananda Shetty,Yoav Yogev,Yair Sofer,Idan Koren,Itzic Cohen. Владелец: Infineon Technologies LLC. Дата публикации: 2024-09-12.

Systems and methods for handling sudden power failures in solid state drives

Номер патента: US09990023B2. Автор: Eran Sandel,Roman Guy,Andrew W. Vogan,Matthew J. Byom,Alexander Paley,Liran Erez,Muhammad N. Ashraf,Lior Mouler. Владелец: Apple Inc. Дата публикации: 2018-06-05.

Protecting a memory device from becoming unusable

Номер патента: US09606853B2. Автор: Nitin V. Sarangdhar,Sudhakar Otturu. Владелец: Intel Corp. Дата публикации: 2017-03-28.

Debugging system and debugging method of multi-core processor

Номер патента: US09852038B2. Автор: Yu-Feng Kang,Qian-Zhi Wang. Владелец: Ali Corp. Дата публикации: 2017-12-26.

Memory system and operating method of the memory system

Номер патента: US12073896B2. Автор: Moon Sik SEO,Gil Bok CHOI,Dae Hwan YUN. Владелец: SK hynix Inc. Дата публикации: 2024-08-27.

Semiconductor memory device and method of verifying the same

Номер патента: US20080123428A1. Автор: Makoto Senoo,Kazunari Kido,Yoshihiro Tsukidate,Shunichi Toyama. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2008-05-29.

Memory system and operating method of the memory system

Номер патента: US20230307073A1. Автор: Moon Sik SEO,Gil Bok CHOI,Dae Hwan YUN. Владелец: SK hynix Inc. Дата публикации: 2023-09-28.

Management of write-protected data in a semiconductor memory

Номер патента: US09437312B2. Автор: Donald Ray Bryant-Rich,Tal Sagy. Владелец: Sandisk IL Ltd. Дата публикации: 2016-09-06.

Semiconductor memory device and memory system having the same

Номер патента: US12027194B2. Автор: Seungki HONG,Geuntae Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-02.

Semiconductor memory device

Номер патента: US20020001173A1. Автор: Shiro Hayano,Kazuyoshi Nishiyama. Владелец: Individual. Дата публикации: 2002-01-03.

Memory system performing cache bypassing operation and cache management method thereof

Номер патента: US20240256452A1. Автор: Shinhaeng KANG,Kyomin Sohn,Suk Han Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-08-01.

Techniques for reducing disturbance in a semiconductor memory device

Номер патента: US20140056090A1. Автор: David Kim,Jungtae Kwon,Sunil Bhardwaj. Владелец: Micron Technology Inc. Дата публикации: 2014-02-27.

Techniques for reducing disturbance in a semiconductor memory device

Номер патента: US09812179B2. Автор: David Kim,Jungtae Kwon,Sunil Bhardwaj. Владелец: Ovonyx Memory Technology LLC. Дата публикации: 2017-11-07.

Semiconductor memory device mapping external address as internal address wherein internal addresses of spare cells of two blocks differ by upper most bit and internal addresses of main cells of two blocks differ by upper most bit and the internal addresses of main cell and spare cell of each block differ by one bit and operating method for the same

Номер патента: US09443618B2. Автор: Sang-Oh LIM. Владелец: SK hynix Inc. Дата публикации: 2016-09-13.

Semiconductor memory device, semiconductor device, and data write method

Номер патента: US7570522B2. Автор: Tokumasa Hara. Владелец: Toshiba Corp. Дата публикации: 2009-08-04.

Serial interface memory testing apparatus and method

Номер патента: WO2008124095A1. Автор: Massimiliano Frulio,Stefano Surico,Marco Passerini,Alex Pojer. Владелец: ATMEL CORPORATION. Дата публикации: 2008-10-16.

Storage device, method of operating storage device, computing system including storage device and host device for controlling storage device, and method of operating computing system

Номер патента: US20210049096A1. Автор: Seok Jun Lee. Владелец: SK hynix Inc. Дата публикации: 2021-02-18.

Memory system including nonvolatile memory and method of operating nonvolatile memory

Номер патента: US20140119108A1. Автор: Jung Hyuk Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2014-05-01.

Hybrid memory drives, computer system, and related method for operating a multi-mode hybrid drive

Номер патента: US09927975B2. Автор: Thomas L. Pratt. Владелец: Micron Technology Inc. Дата публикации: 2018-03-27.

Semiconductor memory test circuit and method for the same

Номер патента: US6389563B1. Автор: Young Hee Kim,Jin Keun Oh. Владелец: Hyundai Electronics Industries Co Ltd. Дата публикации: 2002-05-14.

Systems, devices, techniques, and methods for data migration

Номер патента: US20220113887A1. Автор: Robert M. Walker,Paul Rosenfeld,Patrick A. La Fratta. Владелец: Micron Technology Inc. Дата публикации: 2022-04-14.

Storage system and method of operating the same

Номер патента: US20160292229A1. Автор: Insoon JO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-10-06.

Semiconductor memory device, controller and memory system having the same

Номер патента: US20190333587A1. Автор: Hae Soo Kim. Владелец: SK hynix Inc. Дата публикации: 2019-10-31.

Circuit for checking memory cells of programmable MOS-integrated semiconductor memories

Номер патента: US4458338A. Автор: Burkhard Giebel,Lothar Schrader,Hans Moormann. Владелец: SIEMENS AG. Дата публикации: 1984-07-03.

Semiconductor memory device and method of verifying the same

Номер патента: US7593266B2. Автор: Makoto Senoo,Kazunari Kido,Yoshihiro Tsukidate,Shunichi Toyama. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2009-09-22.

Semiconductor memory device and its early-warning system and method

Номер патента: EP2306462A4. Автор: Saiwen Lu. Владелец: Netac Technology Co Ltd. Дата публикации: 2011-12-21.

Device and method to reduce wordline RC time constant in semiconductor memory devices

Номер патента: US7570504B2. Автор: Huy Thanh Vo. Владелец: Micron Technology Inc. Дата публикации: 2009-08-04.

Dynamic semiconductor memory device and memory system having the same

Номер патента: US20200176052A1. Автор: Kwang Hyun Kim,Chul Hwan Choo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-06-04.

Semiconductor memory device and memory system having the same

Номер патента: US20230143397A1. Автор: Seungki HONG,Geuntae Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-05-11.

Semiconductor memory device having adjustable refresh period, memory system comprising same, and method of operating same

Номер патента: US20140085999A1. Автор: Uk-Song KANG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2014-03-27.

Semiconductor memory device having adjustable refresh period, memory system comprising same, and method of operating same

Номер патента: US9153294B2. Автор: Uk-Song KANG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2015-10-06.

Controller, memory system and operating method of the controller

Номер патента: US20200310982A1. Автор: Eu Joon BYUN. Владелец: SK hynix Inc. Дата публикации: 2020-10-01.

Memory system and method for operating the same

Номер патента: US20190258577A1. Автор: Jong-Min Lee,Beom-Rae JEONG. Владелец: SK hynix Inc. Дата публикации: 2019-08-22.

Storage device providing a virtual memory region, electronic system including the same, and method of operating the same

Номер патента: US20200042459A1. Автор: Dong-Uk Kim,Joo-young Hwang,Kwang-Hyun La,Duck-Ho Bae,Hyung-Woo RYU,You-Ra Choi. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-02-06.

Method of read operation of nonvolatile semiconductor memory and nonvolatile semiconductor memory

Номер патента: EP1235229B1. Автор: Mitsuteru Fujitsu Limited Iijima. Владелец: Fujitsu Ltd. Дата публикации: 2005-06-08.

Method of read operation of nonvolatile semiconductor memory and nonvolatile semiconductor memory

Номер патента: TW519753B. Автор: Mitsuteru Iijima. Владелец: Fujitsu Ltd. Дата публикации: 2003-02-01.

Semiconductor memory capable of performing through-chip via test and system using the same

Номер патента: US09613721B2. Автор: Ji Hwan Kim. Владелец: SK hynix Inc. Дата публикации: 2017-04-04.

Techniques for reducing disturbance in a semiconductor memory device

Номер патента: US20140307512A1. Автор: David Kim,Jungtae Kwon,Sunil Bhardwaj. Владелец: Micron Technology Inc. Дата публикации: 2014-10-16.

Memory system and method of operating the same

Номер патента: US20230333763A1. Автор: Jeong Su Park,In Mo KWAK. Владелец: SK hynix Inc. Дата публикации: 2023-10-19.

Nonvolatile semiconductor memory device, method for reading data from the nonvolatile semiconductor memory device, and method for writing data into the nonvolatile semiconductor memory device

Номер патента: US6266279B1. Автор: Yoshimasa Yoshimura. Владелец: Mitsubishi Electric Corp. Дата публикации: 2001-07-24.

Runtime selection of memory devices and storage devices in a disaggregated memory system

Номер патента: US20220214805A1. Автор: Richard C. Murphy,Reshmi Basu. Владелец: Micron Technology Inc. Дата публикации: 2022-07-07.

Circuit and method for controlling self-refresh operation in semiconductor memory device

Номер патента: US20120051168A1. Автор: Choung-Ki Song. Владелец: Hynix Semiconductor Inc. Дата публикации: 2012-03-01.

Systems and apparatuses for additive manufacturing with process update and lock down

Номер патента: US11982991B2. Автор: John R. Tumbleston,Kyle Laaker,Ronald A. TRUONG,Abhishek Parmar,Roy Goldman. Владелец: Carbon Inc. Дата публикации: 2024-05-14.

Runtime selection of memory devices and storage devices in a disaggregated memory system

Номер патента: US11762553B2. Автор: Richard C. Murphy,Reshmi Basu. Владелец: Micron Technology Inc. Дата публикации: 2023-09-19.

Semiconductor memory device, method of performing a refresh for semiconductor memory device and refresh counter in semiconductor memory device

Номер патента: US20160027492A1. Автор: Young-Yong Byun,Whi-Young Bae. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-01-28.

Fuse circuit using anti-fuse and method for searching for failed address in semiconductor memory

Номер патента: US20020191468A1. Автор: Haruki Toda. Владелец: Toshiba Corp. Дата публикации: 2002-12-19.

Transient and stable state read operations of a memory device

Номер патента: US20240062829A1. Автор: Ugo Russo,Shyam Sunder Raghunathan,Karan Banerjee. Владелец: Micron Technology Inc. Дата публикации: 2024-02-22.

Method of operating a memory device

Номер патента: US09971549B2. Автор: In-su Choi,Yong-Jun Yu,Doo-Hwan Oh. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-05-15.

Semiconductor memory device and method of performing setting operation in semiconductor memory device

Номер патента: US20150078064A1. Автор: Yoshihisa Iwata,Chika Tanaka,Reika Ichihara. Владелец: Toshiba Corp. Дата публикации: 2015-03-19.

NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF CONTROLLING THE NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE

Номер патента: US20140269097A1. Автор: Abiko Naofumi,HARADA Yoshikazu,YOSHIHARA Masahiro,KAGA Hiroyuki. Владелец: KABUSHIKI KAISHA TOSHIBA. Дата публикации: 2014-09-18.

Semiconductor Memory Device Supporting Read Data Bus Inversion Function and Method of Testing the Semiconductor Memory Device

Номер патента: US20100122130A1. Автор: Gil-Shin Moon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2010-05-13.

Nonvolatile semiconductor memory device and method of reading data from nonvolatile semiconductor memory device

Номер патента: US20110157978A1. Автор: Masao Taguchi,Naoharu Shinozaki,Satoru Sugimoto. Владелец: Elpida Memory Inc. Дата публикации: 2011-06-30.

Selection device for a semiconductor memory device

Номер патента: US6888744B2. Автор: Hans-Heinrich Viehmann. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2005-05-03.

Controller, memory system and operating method thereof

Номер патента: US20200057728A1. Автор: Sang Hyun Kim,Duck Hoi KOO,Soong Sun SHIN. Владелец: SK hynix Inc. Дата публикации: 2020-02-20.

Read operations for active regions of a memory device

Номер патента: US12050786B2. Автор: Lingyun Wang,Bin Zhao. Владелец: Micron Technology Inc. Дата публикации: 2024-07-30.

Suspending operations of a memory system

Номер патента: US12105959B2. Автор: Giuseppe Cariello,David Aaron Palmer,Fulvio Rori. Владелец: Micron Technology Inc. Дата публикации: 2024-10-01.

Resistive memory device and operating method

Номер патента: US09536605B2. Автор: Dae-Seok Byeon,Hyun-Kook PARK,Yeong-Taek Lee,Bo-Geun Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-01-03.

Semiconductor memory device including system block for system data and method of operating the same

Номер патента: US11315638B2. Автор: Sang Bum Lee. Владелец: SK hynix Inc. Дата публикации: 2022-04-26.

Memory system and method of operating the same

Номер патента: US20210065828A1. Автор: Bongsoon LIM,Yonghyuk Choi,Jaeduk Yu. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-03-04.

Method of programming one-time programmable (OTP) memory device and method of testing semiconductor integrated circuit including the same

Номер патента: US09754678B2. Автор: Do-Hoon Byun,Chang-Su Sim,Na-Rae Hong. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-09-05.

A system and method for multi-cycle write leveling

Номер патента: US20180075898A1. Автор: Gyan Prakash,Nidhir Kumar. Владелец: Invecas Technologies Pvt Ltd. Дата публикации: 2018-03-15.

Memory system and operating method supporting fast boot using host memory buffer and default enabled information

Номер патента: US12118239B2. Автор: Jeong Hyun Kim,Sung Ju Yoo,Ji Hun Choi,Byong Woo Ryu,Son Hong MIN. Владелец: SK hynix Inc. Дата публикации: 2024-10-15.

Memory management system with power source and method of manufacture thereof

Номер патента: US09754634B2. Автор: Kelvin Marino,Robert Tower Frey,Jinying Shen,Joshua Harris Brooks. Владелец: Smart Modular Technologies Inc. Дата публикации: 2017-09-05.

OPERATING METHOD OF SEMICONDUCTOR MEMORY DEVICE, CONTROLLER, AND MEMORY SYSTEM HAVING THE SAME

Номер патента: US20220171566A1. Автор: KIM Ju Hee. Владелец: . Дата публикации: 2022-06-02.

Semiconductor memory device and method for reading data from such a semiconductor memory device

Номер патента: DE4206079C2. Автор: Mitsuru Sugita,Toyokatsu Nakajima. Владелец: Mitsubishi Electric Corp. Дата публикации: 1995-08-03.

Defective detection method of semiconductor integrated circuit and semiconductor memory device including memory test circuit and memory test circuit

Номер патента: KR100371047B1. Автор: 야수오 고바야시. Владелец: 닛본 덴기 가부시끼가이샤. Дата публикации: 2003-04-21.

Nonvolatile semiconductor memory device with a fail bit detecting scheme and method for counting the number of fail bits of the nonvolatile semiconductor memory device

Номер патента: KR100399365B1. Автор: 정재용,이성수. Владелец: 삼성전자주식회사. Дата публикации: 2003-09-26.

Systems and methods for interactive learning

Номер патента: WO2024047671A1. Автор: Navin Agarwal,Sumantra MITRA,Nishad INGLE,Nilam PATEL,Pravin THAKUR. Владелец: Glenmark Life Sciences Limited. Дата публикации: 2024-03-07.

System and method for effectively implementing isochronous processor cache

Номер патента: US20030115430A1. Автор: Bruce Fairman,Glen Stone,Scott Smyers. Владелец: Individual. Дата публикации: 2003-06-19.

Computer-implemented systems and methods of automated physiological monitoring, prognosis, and triage

Номер патента: US09883801B2. Автор: Kurt Stump,Chilezie Nnadi,Alexander Martini. Владелец: Individual. Дата публикации: 2018-02-06.

A random access memory device, a semiconductor memory device, and a method of reducing power consumption in a dynamic memory device

Номер патента: DE102004044984B4. Автор: Joo-Sang Lee. Владелец: Qimonda AG. Дата публикации: 2010-08-19.

Memory device and method of managing temperature of the same

Номер патента: US20240203505A1. Автор: Jung Ae Kim,Jee Yul KIM. Владелец: SK hynix Inc. Дата публикации: 2024-06-20.

Memory system for supporting a merge operation and method for operating the same

Номер патента: US10671538B2. Автор: Jong-Min Lee,Beom-Rae JEONG. Владелец: SK hynix Inc. Дата публикации: 2020-06-02.

secure non-volatile memory device and method of protecting data therein

Номер патента: US20100002511A1. Автор: Guoqiao Tao,Steven V. E. S. Van Dijk. Владелец: NXP BV. Дата публикации: 2010-01-07.

Semiconductor Memory Having Volatile and Multi-Bit Non-Volatile Functionality and Method of Operating

Номер патента: US20160111158A1. Автор: Widjaja Yuniarto. Владелец: . Дата публикации: 2016-04-21.

System and method for selectively affecting data flow to or from a memory device

Номер патента: EP1639480A2. Автор: Richard Chin,Frank N. Cheung. Владелец: Raytheon Co. Дата публикации: 2006-03-29.

Performing block-level media management operations for block stripes in a memory device

Номер патента: US12062401B2. Автор: Yang Liu,Wei Wang,Charles See Yeung Kwong,Seungjune Jeon. Владелец: Micron Technology Inc. Дата публикации: 2024-08-13.

Decoding drive circuit and method therefor, word line decoding circuit and semiconductor memory

Номер патента: EP4243020A4. Автор: Weibing SHANG,Minghao LI,Xianjun Wu. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-09-25.

Nonvolatile memory system for creating and updating program time stamp and operating method thereof

Номер патента: US09798478B2. Автор: In-Hwan Choi,Byungjune SONG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-10-24.

Nonvolatile memory system and refresh method

Номер патента: US09460800B2. Автор: Jung-Been Im,Jang-Hwan Kim,Dong-Hyun Song,Change-Hee LEE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-10-04.

SEMICONDUCTOR MEMORY DEVICE AND FILE MEMORY SYSTEM

Номер патента: US20140050010A1. Автор: Toda Haruki. Владелец: KABUSHIKI KAISHA TOSHIBA. Дата публикации: 2014-02-20.

SEMICONDUCTOR MEMORY DEVICE, CONTROLLER, AND MEMORY SYSTEM

Номер патента: US20140286099A1. Автор: SHIRAKAWA Masanobu. Владелец: KABUSHIKI KAISHA TOSHIBA. Дата публикации: 2014-09-25.

SEMICONDUCTOR MEMORY DEVICE AND FILE MEMORY SYSTEM

Номер патента: US20150279456A1. Автор: Toda Haruki. Владелец: KABUSHIKI KAISHA TOSHIBA. Дата публикации: 2015-10-01.

SEMICONDUCTOR MEMORY DEVICE, CONTROLLER AND MEMORY SYSTEM HAVING THE SAME

Номер патента: US20190333587A1. Автор: Kim Hae Soo. Владелец: SK HYNIX INC.. Дата публикации: 2019-10-31.

Semiconductor memories and their test circuits, memory systems and data transfer systems

Номер патента: KR970023369A. Автор: 하루끼 도다. Владелец: 니시무로 다이조. Дата публикации: 1997-05-30.

Semiconductor memory reading data stored in capacitors in memory cell and method for reading data from the semiconductor memory

Номер патента: KR100315065B1. Автор: 스미오 다나까,류 오기와라. Владелец: 니시무로 타이죠. Дата публикации: 2002-01-17.

Method of reading memory cell of semiconductor memory and semiconductor memory

Номер патента: JP2004528664A. Автор: フィッシャー，ヘルムート,シチイピンスキ，カジミェシュ. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2004-09-16.

Nonvolatile semiconductor memory device and nonvolatile memory system using the same

Номер патента: JP4909670B2. Автор: 康之 福田,宏行 永嶋. Владелец: Toshiba Corp. Дата публикации: 2012-04-04.

Bayesian classifier system and method thereof

Номер патента: EP2801057A1. Автор: David Wright,David Falb,Gregory Bush. Владелец: Gentex Corp. Дата публикации: 2014-11-12.

System and method of identification and authentication for tracing agricultural assets, identification element for secure identification of agricultural assets and corresponding computer programs

Номер патента: CA3078193A1. Автор: Roberto MIYANO NETO,Marcos PONTE SOARES. Владелец: SICPA HOLDING SA. Дата публикации: 2019-06-06.

System and method of identification and authentication for tracing agricultural assets, identification element for secure identification of agricultural assets and corresponding computer programs

Номер патента: US12045838B2. Автор: Roberto MIYANO NETO,Marcos PONTE SOARES. Владелец: SICPA HOLDING SA. Дата публикации: 2024-07-23.

Apparatus, system, and method for managing industrial software configurations

Номер патента: WO2012135568A1. Автор: Timothy Aaron STORER,Michael Wayne OGDEN. Владелец: The Procter & Gamble Company. Дата публикации: 2012-10-04.

Non-volatile memory device for selectively performing recovery operation and method of operating the same

Номер патента: US20170125091A1. Автор: Hyun-Jun Yoon,Jae-Woo Im. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-05-04.

Hybrid memory drives, computer system, and related method for operating a multi-mode hybrid drive

Номер патента: US20180356985A1. Автор: Thomas L. Pratt. Владелец: Micron Technology Inc. Дата публикации: 2018-12-13.

Hybrid memory drives, computer system, and related method for operating a multi-mode hybrid drive

Номер патента: EP3494479A1. Автор: Thomas L. Pratt. Владелец: Micron Technology Inc. Дата публикации: 2019-06-12.

Erroneous operation preventing circuit of non-volatile memory device

Номер патента: US20040264268A1. Автор: Katsumi Fukumoto. Владелец: Sharp Corp. Дата публикации: 2004-12-30.

MEMORY CONTROLLER, METHOD OF CONTROLLING THE SAME, AND SEMICONDUCTOR MEMORY DEVICE HAVING BOTH

Номер патента: US20160196209A1. Автор: Kim Jungug. Владелец: . Дата публикации: 2016-07-07.

Nonvolatile semiconductor memory and method for controlling programming voltage of nonvolatile semiconductor memory

Номер патента: US20030107919A1. Автор: Masaru Yano,Mototada Sakashita. Владелец: Fujitsu Ltd. Дата публикации: 2003-06-12.

Hybrid memory drives, computer system, and related method for operating a multi-mode hybrid drive

Номер патента: US20180210655A1. Автор: Thomas L. Pratt. Владелец: Micron Technology Inc. Дата публикации: 2018-07-26.

Hybrid memory drives, computer system, and related method for operating a multi-mode hybrid drive

Номер патента: US20180039414A1. Автор: Thomas L. Pratt. Владелец: Micron Technology Inc. Дата публикации: 2018-02-08.

Systems and methods for improving find last good page processing in memory devices

Номер патента: WO2024129240A1. Автор: Eran Sharon,Asaf Gueta,Omer FAINZILBER,Arie Star. Владелец: WESTERN DIGITAL TECHNOLOGIES, INC.. Дата публикации: 2024-06-20.

Systems and methods for improving find last good page processing in memory devices

Номер патента: US20240192859A1. Автор: Eran Sharon,Asaf Gueta,Omer FAINZILBER,Arie Star. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-06-13.

System and method for indexing source code

Номер патента: US20240184549A1. Автор: Zdenek Tronicek. Владелец: Research Foundation of State University of New York. Дата публикации: 2024-06-06.

Partial block erase operations in memory devices

Номер патента: US12087372B2. Автор: Violante Moschiano,Walter Di Francesco,Shyam Sunder Raghunathan,Haiou Che. Владелец: Micron Technology Inc. Дата публикации: 2024-09-10.

Systems and methods for controlling common mode level for sense amplifier circuitry

Номер патента: US12094521B2. Автор: Ki-Jun Nam. Владелец: Micron Technology Inc. Дата публикации: 2024-09-17.

Partial block erase operations in memory devices

Номер патента: US20240379176A1. Автор: Violante Moschiano,Walter Di Francesco,Shyam Sunder Raghunathan,Haiou Che. Владелец: Micron Technology Inc. Дата публикации: 2024-11-14.

Repair circuit and method of repairing defects in a semiconductor memory device

Номер патента: US20070133323A1. Автор: Byung-Hoon Jeong,Hyung-Jik Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2007-06-14.

Storage system performing overwrite, host system controlling storage system, and operating method for storage system

Номер патента: US12061816B2. Автор: Byungki Lee,Jeonguk Kang,Junhee Kim,Jekyeom JEON,JooYoung HWANG,Keunsan Park,Sunghyun Noh. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-08-13.

Memory device capable of calibration and calibration methods therefor

Номер патента: US20040141370A1. Автор: Manoj Bhattacharyya,Lung Tran. Владелец: Individual. Дата публикации: 2004-07-22.

Method of erasing a resistive memory device

Номер патента: US20080130392A1. Автор: An Chen,Swaroop Kaza,Sameer Haddad,Yi-Ching Jean Wu. Владелец: SPANSION LLC. Дата публикации: 2008-06-05.

Storage device and operating method of storage device

Номер патента: US20240345758A1. Автор: Minji Kim,Jinwoo Park,Sangwon Jung. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-10-17.

Method of writing to non-volatile semiconductor memory device storing information depending on variation in level of threshold voltage

Номер патента: US7376016B2. Автор: Shinichi Kobayashi,Takashi Kono,Takeshi Nakayama,Takeshi Kajimoto. Владелец: Renesas Technology Corp. Дата публикации: 2008-05-20.

Memory device and memory system for direct communication between the memory devices

Номер патента: US20200104060A1. Автор: Young Geun Choi. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-04-02.

Calorimeters for testing energy storage systems and power electronics, methods of making the same and methods of use

Номер патента: EP2684016A1. Автор: John Ireland,Matthew Allen KEYSER,Ahmad Pesaran,Mark Alan MIHALIC. Владелец: Alliance for Sustainable Energy LLC. Дата публикации: 2014-01-15.

Calorimeters for testing energy storage systems and power electronics methods of making the same and methods of use

Номер патента: US09476780B2. Автор: John Ireland,Matthew Allen KEYSER,Ahmad Pesaran,Mark Alan MIHALIC. Владелец: Alliance for Sustainable Energy LLC. Дата публикации: 2016-10-25.

METHOD OF ADJUSTING OPERATING CONDITIONS FOR SEMICONDUCTOR MEMORY DEVICE

Номер патента: US20220059175A1. Автор: Suzuki Shinji. Владелец: Kioxia Corporation. Дата публикации: 2022-02-24.

Method of prefetch and restore in semiconductor memory device and circuit thereof

Номер патента: KR100349371B1. Автор: 김태윤. Владелец: 주식회사 하이닉스반도체. Дата публикации: 2002-08-21.

Method of merging blocks for a semiconductor memory device

Номер патента: KR101635446B1. Автор: 박기태,김민석. Владелец: 삼성전자주식회사. Дата публикации: 2016-07-04.

Semiconductor memory device capable of multi row address testing and method thereof

Номер патента: KR100338776B1. Автор: 김성훈,김철수,윤홍구. Владелец: 윤종용. Дата публикации: 2002-05-31.

Semiconductor memory device with standby current failure judging function and method for judging standby current failure

Номер патента: US20040233698A1. Автор: Young-Ho Suh,Kyo-Min Sohn. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2004-11-25.

Method of writing data to a semiconductor memory device

Номер патента: US7257032B2. Автор: Noboru Shibata,Hiroshi Sukegawa,Masaki Fujiu. Владелец: Toshiba Corp. Дата публикации: 2007-08-14.

Method of reading stored data and semiconductor memory device

Номер патента: US20020159312A1. Автор: Koji Furumi,Gen Kasai. Владелец: Sony Corp. Дата публикации: 2002-10-31.

Semiconductor memory device and fail cell address program circuit and method thereof

Номер патента: KR100462877B1. Автор: 김재훈,오효진,서동일. Владелец: 삼성전자주식회사. Дата публикации: 2004-12-17.

Method of driving and testing a semiconductor memory device

Номер патента: US6940769B2. Автор: Shun-Ker Wu. Владелец: Nanya Technology Corp. Дата публикации: 2005-09-06.

Circuit and method for controlling self-refresh operation in semiconductor memory device

Номер патента: US8395957B2. Автор: Choung-Ki Song. Владелец: Hynix Semiconductor Inc. Дата публикации: 2013-03-12.

Apparatus and method for improving dynamic refresh in a semiconductor memory device by temperature measurement

Номер патента: IL180483A0. Автор: . Владелец: Qualcomm Inc. Дата публикации: 2007-06-03.

Address verification for a memory device

Номер патента: WO2021126457A1. Автор: Scott E. Schaefer,Aaron P. Boehm. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2021-06-24.

Methods of testing repair circuits of memory devices

Номер патента: US20240290414A1. Автор: Taeyun Kim,Taewon Kim,Sanghee KANG,Kiho Hyun. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-08-29.

Memory programming method, memory device, and memory system

Номер патента: US20240295960A1. Автор: Yao Chen,Zhiliang Xia,Yifan Li. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-09-05.

Usage level identification for memory device addresses

Номер патента: US20240281371A1. Автор: Luca Porzio,Giuseppe Cariello,Roberto IZZI. Владелец: Micron Technology Inc. Дата публикации: 2024-08-22.

Programming method of non volatile memory device

Номер патента: US09953703B2. Автор: Wook-ghee Hahn,Chang-Yeon YU,Joo-kwang LEE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-04-24.

Cell deterioration warning apparatus and method

Номер патента: US20120002468A1. Автор: Vishal Sarin,Jung-Sheng Hoei,Frankie F. Roohparvar. Владелец: Micron Technology Inc. Дата публикации: 2012-01-05.

Embedded memory and multi-media accelerator and method of operating same

Номер патента: WO2008070576A3. Автор: Wingyu Leung,Mukesh K Patel. Владелец: Mukesh K Patel. Дата публикации: 2009-04-30.

Memory device and memory system having the same

Номер патента: US20180067693A1. Автор: Byung Ryul Kim,Yong Hwan HONG. Владелец: SK hynix Inc. Дата публикации: 2018-03-08.

Sense amplifier, method of operating the same, and volatile memory device including the same

Номер патента: US20240339151A1. Автор: Dongil LEE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-10-10.

Non-volatile memory device and method for programming the same

Номер патента: US20120147655A1. Автор: Sung Yeon Lee. Владелец: Hynix Semiconductor Inc. Дата публикации: 2012-06-14.

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Номер патента: US20170047130A1. Автор: Goel Manish,Zhu Yuming,Zhang Sai,Bittlestone Clive,Qiu Yunchen. Владелец: . Дата публикации: 2017-02-16.

A transaction system and method of operating same

Номер патента: WO2017081620A3. Автор: Daniel Jacobus Buys. Владелец: Cloudone Technology Proprietary Limited. Дата публикации: 2017-07-06.

Systems, devices, techniques, and methods for data migration

Номер патента: US11782626B2. Автор: Robert M. Walker,Paul Rosenfeld,Patrick A. La Fratta. Владелец: Micron Technology Inc. Дата публикации: 2023-10-10.

Memory device with circuitry for improving accuracy of a time estimate and method for use therewith

Номер патента: WO2008154307A3. Автор: Michael Holtzman,Ron Barzilai,Rotem Sela,Fabrice E Jogand-Coulomb. Владелец: Fabrice E Jogand-Coulomb. Дата публикации: 2009-07-23.

Circuit and method for asynchronously accessing a ferroelectric memory device

Номер патента: EP1225594A3. Автор: David C. McClure. Владелец: STMicroelectronics lnc USA. Дата публикации: 2003-12-03.

A secure non-volatile memory device and a method of protecting data therein

Номер патента: WO2008038243A1. Автор: Guoqiao Tao,Steven V. E. S. Van Dijk. Владелец: NXP B.V.. Дата публикации: 2008-04-03.

A secure non-volatile memory device and a method of protecting data therein

Номер патента: EP2074629A1. Автор: Guoqiao Tao,Steven V. E. S. Van Dijk. Владелец: NXP BV. Дата публикации: 2009-07-01.

Data storage device and method thereof

Номер патента: US09785584B2. Автор: Jeen PARK. Владелец: SK hynix Inc. Дата публикации: 2017-10-10.

Flash-based storage warehouse apparatuses and methods thereof

Номер патента: US09766811B1. Автор: David Slik,Peter Corbett. Владелец: NetApp Inc. Дата публикации: 2017-09-19.

System, apparatus, and method for anti-replay protection of data stored in a non-volatile memory device

Номер патента: US09690922B2. Автор: Mark Buer,Jaku Jose,Weiyang Zhou,Kunyan Liu. Владелец: Avago Technologies General IP Singapore Pte Ltd. Дата публикации: 2017-06-27.

Memory modules with reduced rank loading and memory systems including same

Номер патента: US09542343B2. Автор: Jung-hwan Choi,In-Dal Song,Jeong-Kyoum Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-01-10.

Method of Maintaining the State of Semiconductor Memory Having Electrically Floating Body Transistor

Номер патента: US20160078921A1. Автор: OR-BACH Zvi,Widjaja Yuniarto. Владелец: . Дата публикации: 2016-03-17.

Method of Maintaining the State of Semiconductor Memory Having Electrically Floating Body Transistor

Номер патента: US20140160868A1. Автор: OR-BACH Zvi,Widjaja Yuniarto. Владелец: . Дата публикации: 2014-06-12.

Memory controller and method of operating the same

Номер патента: US20230244607A1. Автор: Na Young LEE,Ku Ik KWON,Kyeong Seok Kim,Byong Woo Ryu. Владелец: SK hynix Inc. Дата публикации: 2023-08-03.

Multi-material inspection system and velocity measurement method of critically refracted longitudinal wave based on single-angle wedges

Номер патента: US20220268739A1. Автор: Li Lin,Song Zhang,Hong Wang,Zhiyuan Ma,Shijie Jin,Zhongbing Luo. Владелец: Dalian University of Technology. Дата публикации: 2022-08-25.

Satellite navigation system and attitude determination method of object using the same

Номер патента: WO2003017018A1. Автор: Sangjeong LEE,Chansik Park,Seokbo Son,Byungyeun Kim. Владелец: Navicom Co., Ltd.. Дата публикации: 2003-02-27.

Controller for at least one heater utilized in a hot runner injection molding system and an associated method of use

Номер патента: CA2642362C. Автор: Jim Pilavdzic. Владелец: HUSKY INJECTION MOLDING SYSTEMS LTD. Дата публикации: 2013-04-09.

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Номер патента: EP4371382A1. Автор: Elijah B Garner,Cary S Hubner,Kelby J Krueger,Michael C Steele,Bradley A Wackerle. Владелец: Deere and Co. Дата публикации: 2024-05-22.

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Номер патента: US20240185427A1. Автор: Yongjin Lee,Sung Yup LEE. Владелец: Electronics and Telecommunications Research Institute ETRI. Дата публикации: 2024-06-06.

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Номер патента: AU2021237872A1. Автор: Daniel Gat,Andrey GANDMAN,Yossi Appelbaum-Elad,Ben Levy. Владелец: Lumenis BE Ltd. Дата публикации: 2022-11-03.

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Номер патента: EP4121973A1. Автор: Daniel Gat,Andrey GANDMAN,Yossi Appelbaum-Elad,Ben Levy. Владелец: Lumenis BE Ltd. Дата публикации: 2023-01-25.

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Номер патента: US20210290154A1. Автор: Daniel Gat,Andrey GANDMAN,Yossi Appelbaum-Elad,Ben Levy. Владелец: Lumenis BE Ltd. Дата публикации: 2021-09-23.

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Номер патента: WO2021186443A1. Автор: Daniel Gat,Andrey GANDMAN,Yossi Appelbaum-Elad,Ben Levy. Владелец: LUMENIS LTD. Дата публикации: 2021-09-23.

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Номер патента: AU2024216304A1. Автор: Daniel Gat,Andrey GANDMAN,Yossi Appelbaum-Elad,Ben Levy. Владелец: Lumenis BE Ltd. Дата публикации: 2024-09-12.

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Номер патента: US09886799B2. Автор: Sung Bok Kwak. Владелец: TrueLite Trace Inc. Дата публикации: 2018-02-06.

Methods for characterizing infections and methods for developing tests for the same

Номер патента: EP4388136A1. Автор: Ephraim L. TSALIK,Ricardo HENAO GIRALDO,Benjamin Charles SCHNELLER,Donna G. CRENSHAW. Владелец: Biomeme Inc. Дата публикации: 2024-06-26.

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Номер патента: US20190122192A1. Автор: Thomas André Eriksson,Stefan Tom Ekerfelt. Владелец: SPOTIFY AB. Дата публикации: 2019-04-25.

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Номер патента: US20240363197A1. Автор: Ephraim L. TSALIK,Ricardo HENAO GIRALDO,Christopher Woods,Benjamin Charles SCHNELLER,Donna G. CRENSHAW. Владелец: Predigen Inc. Дата публикации: 2024-10-31.

System and method of estimating vital signs of user using artificial intelligence

Номер патента: US20230293113A1. Автор: Nikhil Sehgal. Владелец: Individual. Дата публикации: 2023-09-21.

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Номер патента: US09806088B2. Автор: Takuya INATSUKA. Владелец: Toshiba Memory Corp. Дата публикации: 2017-10-31.

Three-dimensional semiconductor memory device, an electronic system including the same, and method of fabricating the same

Номер патента: US20240373632A1. Автор: Junhee LIM,Sungsu Moon,Sea Hoon Lee,Kang Lib KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-11-07.

Semiconductor memory device having multilayered storage node contact plug and method for fabricating the same

Номер патента: US20020093035A1. Автор: Byeong-Yun Nam,Beom-jun Jin. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2002-07-18.

Method of manufacturing a three-dimensional semiconductor memory device

Номер патента: US09799657B2. Автор: Kihyun Hwang,Bio Kim,Jintae Noh,Hanvit Yang,Su-Jin Shin. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-10-24.

Multi-bit non-volatile memory device, method of operating the same, and method of manufacturing the multi-bit non-volatile memory device

Номер патента: US20070247913A1. Автор: Sang-Min Shin,Won-joo Kim,Sun-Ae Seo,Choong-rae Cho,Yoon-dong Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2007-10-25.

Multi-bit non-volatile memory device, method of operating the same, and method of manufacturing the multi-bit non-volatile memory device

Номер патента: US20060097308A1. Автор: Sang-Min Shin,Won-joo Kim,Sun-Ae Seo,Choong-rae Cho,Yoon-dong Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2006-05-11.

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Номер патента: US7361554B2. Автор: Sang-Min Shin,Won-joo Kim,Sun-Ae Seo,Choong-rae Cho,Yoon-dong Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2008-04-22.

Three-dimensional semiconductor memory device, electronic system including the same, and method of fabricating the same

Номер патента: US20230247834A1. Автор: Gukhyon Yon,Soyeong AHN. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-08-03.

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Номер патента: US20240064991A1. Автор: Joyeeta Nag,Fei Zhou,Tiffany Santos,Raghuveer S. Makala,Rahul Sharangpani,Bhagwati PRASAD,Adarsh RAJASHEKHAR,Kartik SONDHI. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-02-22.

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Номер патента: US20240064992A1. Автор: Joyeeta Nag,Fei Zhou,Tiffany Santos,Raghuveer S. Makala,Rahul Sharangpani,Bhagwati PRASAD,Kartik SONDHI. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-02-22.

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Номер патента: US20210327882A1. Автор: Chun-Cheng Liao. Владелец: Nanya Technology Corp. Дата публикации: 2021-10-21.

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Номер патента: US20240074175A1. Автор: Dong Uk Lee,Hae Chang Yang. Владелец: SK hynix Inc. Дата публикации: 2024-02-29.

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Номер патента: US8110485B2. Автор: SUNG Wook Jung,Kyung Soo Jang,Jae Hyun Cho,Byoung Deog Choi,Jun Sin Yi. Владелец: Sungkyunkwan University Foundation For Corporate Collaboration. Дата публикации: 2012-02-07.

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Номер патента: US20080003814A1. Автор: Eun Soo Kim,Seung Hee Hong,Cheol Mo Jeong,Jung Geun Kim. Владелец: Hynix Semiconductor Inc. Дата публикации: 2008-01-03.

Flash memory device with three-dimensional half flash structure and methods for forming the same

Номер патента: US20220359760A1. Автор: Yu-Chu Lin,Yi-Ling Liu,Keng-Ying Liao,Wen-Chih Chiang,Huai-Jen Tung,Chi-Chung JEN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-11-10.

Memory devices having reduced interference between floating gates and methods of fabricating such devices

Номер патента: EP2036122A2. Автор: Seiichi Aritome. Владелец: Micron Technology Inc. Дата публикации: 2009-03-18.

Semiconductor memory array with air gaps between adjacent gate structures and method of manufacturing the same

Номер патента: US20160086966A1. Автор: Chun-Min Cheng,Pei-Ci Jhang. Владелец: Macronix International Co Ltd. Дата публикации: 2016-03-24.

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Номер патента: US20240224527A1. Автор: Xuan Wang,Jae Kyeong Jeong,Chang Hwan Choi,Hyeon Joo SEUL,Hoon Hee HAN,Soon Oh Jeong. Владелец: Industry University Cooperation Foundation IUCF HYU. Дата публикации: 2024-07-04.

Three-dimensional memory device including through-memory-level via structures and methods of making the same

Номер патента: US20210384206A1. Автор: Takaaki IWAI,Hirofumi TOKITA,Yoshitaka Otsu. Владелец: SanDisk Technologies LLC. Дата публикации: 2021-12-09.

Three-dimensional memory device with partially discrete charge storage regions and method of making thereof

Номер патента: US09960180B1. Автор: Yanli Zhang,Peng Zhang,Fei Zhou,Rahul Sharangpani,Keerti Shukla,Raghuveer Makala. Владелец: SanDisk Technologies LLC. Дата публикации: 2018-05-01.

Ferroelectric memory device containing word lines and pass gates and method of forming the same

Номер патента: US20200411554A1. Автор: Yanli Zhang,Johann Alsmeier. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-12-31.

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Номер патента: US09842907B2. Автор: Zhenyu Lu,Raghuveer S. Makala,Rahul Sharangpani,Sateesh KOKA,Somesh Peri. Владелец: SanDisk Technologies LLC. Дата публикации: 2017-12-12.

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Номер патента: US09818801B1. Автор: Peter Rabkin,Christopher J. Petti,Masaaki Higashitani,Perumal Ratnam. Владелец: SanDisk Technologies LLC. Дата публикации: 2017-11-14.

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Номер патента: US12127405B2. Автор: Yan-Ru Su. Владелец: Macronix International Co Ltd. Дата публикации: 2024-10-22.

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Номер патента: US20130087849A1. Автор: Marcello Mariani,Giulio Albini,Paolo Tessariol,Umberto M. Meotto,Paola Bacciaglia. Владелец: Micron Technology Inc. Дата публикации: 2013-04-11.

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Номер патента: US20110183509A1. Автор: Hongyu Yu,Hag-Ju Cho,Bogdan Govoreanu. Владелец: Interuniversitair Microelektronica Centrum vzw IMEC. Дата публикации: 2011-07-28.

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Номер патента: EP4437588A1. Автор: Peng Chen,XinRu Zeng,Houde Zhou. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-10-02.

Methods of forming an apparatus, and related apparatuses, memory devices, and electronic systems

Номер патента: US20200194438A1. Автор: Yu Jen Lin,Oscar O. Enomoto,Chia Wei Tsai,Chin Chuan Liu. Владелец: Micron Technology Inc. Дата публикации: 2020-06-18.

Three-dimensional memory device having pocket structure in memory string and method for forming the same

Номер патента: US12029038B2. Автор: Yonggang YANG. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-07-02.

Three-dimensional memory device with divided drain select gate lines and method for forming the same

Номер патента: WO2023108330A1. Автор: Yan Gu,Zhiliang Xia,Di Wang,Wenxi Zhou,Zongliang Huo. Владелец: Yangtze Memory Technologies Co., Ltd.. Дата публикации: 2023-06-22.

Method of manufacturing an embedded split-gate flash memory device

Номер патента: US09443946B2. Автор: Jing Zhang,Liqun Zhang,Huilin MA. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2016-09-13.

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Номер патента: WO2024118277A1. Автор: Masanori Tsutsumi,Naohiro Hosoda,Kazuki ISOZUMI. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-06-06.

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Номер патента: US20240179908A1. Автор: Masanori Tsutsumi,Naohiro Hosoda,Kazuki ISOZUMI. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-05-30.

Ferroelectric tunnel junction memory device using a magnesium oxide tunneling dielectric and methods for forming the same

Номер патента: US12120885B2. Автор: Sai-Hooi Yeong,Han-Jong Chia,Bo-Feng YOUNG,Mauricio Manfrini,Chun-Chieh Li. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-15.

Ferroelectric tunnel junction memory device using a magnesium oxide tunneling dielectric and methods for forming the same

Номер патента: US20240365560A1. Автор: Sai-Hooi Yeong,Han-Jong Chia,Bo-Feng YOUNG,Mauricio Manfrini,Chun-Chieh Li. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-31.

Nanocrystal silicon layer structures formed using plasma deposition technique, methods of forming the same, nonvolatile memory devices having the nanocrystal silicon layer structures, and methods of fabricating the nonvolatile memory devices

Номер патента: US20100148181A1. Автор: SUNG Wook Jung,Kyung Soo Jang,Jae Hyun Cho,Byoung Deog Choi,Jun Sin Yi. Владелец: Sungkyunkwan University Foundation For Corporate Collaboration. Дата публикации: 2010-06-17.

Phase change memory device having an improved word line resistance, and methods of making same

Номер патента: US8415197B2. Автор: Jang Uk Lee,Mi Ra CHOI. Владелец: SK hynix Inc. Дата публикации: 2013-04-09.

Phase change memory device having an improved word line resistance, and methods of making same

Номер патента: US8283651B2. Автор: Jang Uk Lee,Mi Ra CHOI. Владелец: SK hynix Inc. Дата публикации: 2012-10-09.

Flash memory device with three-dimensional half flash structure and methods for forming the same

Номер патента: US11888074B2. Автор: Yu-Chu Lin,Yi-Ling Liu,Keng-Ying Liao,Wen-Chih Chiang,Huai-Jen Tung,Chi-Chung JEN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-01-30.

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Номер патента: WO2023224946A1. Автор: Milan PESIC. Владелец: Applied Materials, Inc.. Дата публикации: 2023-11-23.

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Номер патента: US20230253508A1. Автор: Yu-Chu Lin,Yi-Ling Liu,Keng-Ying Liao,Wen-Chih Chiang,Huai-Jen Tung,Chi-Chung JEN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-08-10.

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Номер патента: US20230380165A1. Автор: Milan PESIC. Владелец: Applied Materials Inc. Дата публикации: 2023-11-23.

Phase change memory device having an improved word line resistance, and methods of making same

Номер патента: US20120329222A1. Автор: Jang Uk Lee,Mi Ra CHOI. Владелец: SK hynix Inc. Дата публикации: 2012-12-27.

Non-volatile memory device having an asymmetrical gate dielectric layer and method of manufacturing the same

Номер патента: US20050205923A1. Автор: Sanghun Jeon,Jeong Han,Soodoo Chae. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2005-09-22.

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Номер патента: US11849578B2. Автор: Tatsuya Inoue. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-12-19.

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Номер патента: US11973026B2. Автор: Koichi Ito,Michiaki Sano. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-04-30.

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Номер патента: US20210384207A1. Автор: Junpei Kanazawa,Takaaki IWAI,Hironori Matsuoka,Hisakazu Otoi,Raiden MATSUNO. Владелец: SanDisk Technologies LLC. Дата публикации: 2021-12-09.

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Номер патента: US20200335518A1. Автор: Masatoshi Nishikawa,Zhixin Cui,Ken Oowada. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-10-22.

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Номер патента: WO2020060594A1. Автор: Kiyohiko Sakakibara,Zhixin Cui,Shinsuke YADA. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-03-26.

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Номер патента: US20240008281A1. Автор: Fei Zhou,Raghuveer S. Makala,Adarsh RAJASHEKHAR,Kartik SONDHI. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-01-04.

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Номер патента: WO2023086126A1. Автор: Fei Zhou,Raghuveer S. Makala,Adarsh RAJASHEKHAR. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-05-19.

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Номер патента: US11968826B2. Автор: Raghuveer S. Makala,Rahul Sharangpani,Ramy Nashed Bassely SAID,Senaka Kanakamedala. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-04-23.

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Номер патента: US20240064995A1. Автор: Fei Zhou,Raghuveer S. Makala,Rahul Sharangpani,Adarsh RAJASHEKHAR,Kartik SONDHI. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-02-22.

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Номер патента: US20220254733A1. Автор: Yanli Zhang,Satoshi Shimizu,Yusuke Yoshida,Johann Alsmeier,Tatsuya Hinoue,Seiji Shimabukuro,Genta Mizuno,Keisuke Izumi,Ryousuke ITOU,Yujin TERASAWA,Kenzo IIZUKA. Владелец: SanDisk Technologies LLC. Дата публикации: 2022-08-11.

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Номер патента: US20190273088A1. Автор: Yoshiyuki Okura,Zhixin Cui,Hiroshi Minakata,Keigo KITAZAWA. Владелец: SanDisk Technologies LLC. Дата публикации: 2019-09-05.

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Номер патента: US20200251489A1. Автор: Tomohiro Kubo,James Kai,Masanori Tsutsumi,Shigehisa Inoue. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-08-06.

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Номер патента: US20200251488A1. Автор: Wei Zhao,Yanli Zhang,Makoto Koto,James Kai,Takaaki IWAI,Sayako Nagamine,Ching-Huang Lu. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-08-06.

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Номер патента: US11903190B2. Автор: Yukihiro Sakotsubo. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-02-13.

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Номер патента: US20220189981A1. Автор: Yukihiro Sakotsubo. Владелец: SanDisk Technologies LLC. Дата публикации: 2022-06-16.

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Номер патента: US20220189986A1. Автор: Takeki Ninomiya. Владелец: SanDisk Technologies LLC. Дата публикации: 2022-06-16.

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Номер патента: US6087222A. Автор: Shui-Hung Chen,Di-Son Kuo,Chrong Jung Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2000-07-11.

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Номер патента: US20230209842A1. Автор: Peng Chen,XinRu Zeng,Houde Zhou. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-06-29.

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Номер патента: WO2023124816A1. Автор: Peng Chen,XinRu Zeng,Houde Zhou. Владелец: Yangtze Memory Technologies Co., Ltd.. Дата публикации: 2023-07-06.

Method of fabricating a charge trap NAND flash memory device

Номер патента: US9224873B2. Автор: Marcello Mariani,Giulio Albini,Paolo Tessariol,Umberto M. Meotto,Paola Bacciaglia. Владелец: Micron Technology Inc. Дата публикации: 2015-12-29.

Nonvolatile memory device and nonvolatile memory system including the same

Номер патента: US20220115344A1. Автор: Sung-Min Hwang,Ji Won Kim,Joon-Sung LIM,Jae Ho AHN,Suk Kang SUNG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-04-14.

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Номер патента: US20150079742A1. Автор: Raghuveer S. Makala,Johann Alsmeier,Jayavel Pachamuthu,Yao-Sheng Lee. Владелец: SanDisk Technologies LLC. Дата публикации: 2015-03-19.

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Номер патента: US20200395374A1. Автор: Wei Xu,Pan Huang,Ping Yan,Zongliang Huo,Wenbin Zhou,Haohao YANG. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2020-12-17.

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Номер патента: US12010834B2. Автор: Kun Zhang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-06-11.

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Номер патента: WO2022133990A1. Автор: Zhong Zhang. Владелец: Yangtze Memory Technologies Co., Ltd.. Дата публикации: 2022-06-30.

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Номер патента: US11871573B2. Автор: Zhong Zhang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-01-09.

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Номер патента: US20240090227A1. Автор: Zhong Zhang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-03-14.

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Номер патента: EP4218056A1. Автор: Yan Gu,Zhiliang Xia,Di Wang,Wenxi Zhou,Zongliang Huo. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-08-02.

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Номер патента: US20230403850A1. Автор: Fumitaka Amano,Ryo KAMBAYASHI. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-12-14.

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Номер патента: US20240023341A1. Автор: Chun-Chieh Lu,Sai-Hooi Yeong,Han-Jong Chia,Bo-Feng YOUNG,Mauricio Manfrini. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-01-18.

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Номер патента: WO2023163734A1. Автор: Yanli Zhang,Peng Zhang,Raghuveer S. Makala,Ramy Nashed Bassely SAID,Senaka Kanakamedala. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-08-31.

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Номер патента: US20220230917A1. Автор: Fumitaka Amano,Yuji TOTOKI,Shunsuke Takuma. Владелец: SanDisk Technologies LLC. Дата публикации: 2022-07-21.

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Номер патента: US20230363161A1. Автор: Peter Rabkin,Masaaki Higashitani. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-11-09.

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Номер патента: US11805657B2. Автор: Chun-Chieh Lu,Sai-Hooi Yeong,Han-Jong Chia,Bo-Feng YOUNG,Mauricio Manfrini. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-10-31.

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Номер патента: US20240074170A1. Автор: Takashi Yuda,Ippei Yasuda,Noriyuki NAGAHATA. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-02-29.

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Номер патента: US20230402387A1. Автор: Raghuveer S. Makala,Rahul Sharangpani,Fumitaka Amano,Ryo KAMBAYASHI. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-12-14.

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Номер патента: US20230269939A1. Автор: Yanli Zhang,Peng Zhang,Raghuveer S. Makala,Ramy Nashed Bassely SAID,Senaka Kanakamedala. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-08-24.

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Номер патента: US20240213147A1. Автор: Naohiro Hosoda,Tatsuya Hinoue. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-06-27.

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Номер патента: WO2024144916A1. Автор: Naohiro Hosoda,Tatsuya Hinoue. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-07-04.

Methods of forming and operating semiconductor device

Номер патента: US20110194356A1. Автор: Yoon Kim,Byung-gook Park,Wook-Hyun Kwon,Yun-Heub Song. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2011-08-11.

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Номер патента: US20050186734A1. Автор: Nae-in Lee,Sung-Ho Kim,Jin-Hee Kim,Ki-chul Kim,Kwang-Wook Koh,Sang-Su Kim,In-Wook Cho,Geun-Jong Bae. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2005-08-25.

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Номер патента: RU2407195C2. Автор: Беруз ПУСТЧИ,Дейвид Т.Л. БИНГХЕМ,Беруз ПУСТЧИ (CA),Дейвид Т.Л. БИНГХЕМ (CA). Владелец: Эвая Кэнеда Корп.. Дата публикации: 2010-12-20.

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Номер патента: US20240130137A1. Автор: Fei Zhou,Raghuveer S. Makala,Rahul Sharangpani,Adarsh RAJASHEKHAR,Kartik SONDHI. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-04-18.

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Номер патента: US09723669B2. Автор: Aliaksei Vladimirovich Sedzin,Marc Vlemmings. Владелец: NXP BV. Дата публикации: 2017-08-01.

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Номер патента: WO2024209419A1. Автор: Robert Petersen,Antonino ORSINO,Junfeng Wang,Filip BARAC,Boris Dortschy,Gautham NAYAK SEETANADI. Владелец: Telefonaktiebolaget lM Ericsson (publ). Дата публикации: 2024-10-10.

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Номер патента: US20240275408A1. Автор: Yuki Kondo,Kosuke Morinaga. Владелец: Kioxia Corp. Дата публикации: 2024-08-15.

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Номер патента: US20240215243A1. Автор: Tomohiro Kubo,Masato Miyamoto,Koichi Matsuno,Masanori Tsutsumi,Takumi Moriyama,Michio Oryoji,Shunsuke Takuma. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-06-27.

Three-dimensional memory device with reduced neighboring word line interference and methods of forming the same

Номер патента: US20240237344A1. Автор: Raghuveer S. Makala,Ramy Nashed Bassely SAID,Senaka Kanakamedala,Jiahui Yuan,Sarath Puthenthermadam,Longju LIU. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-07-11.

Three-dimensional memory device with dielectric fins in staircase region and methods of making thereof

Номер патента: US20240196610A1. Автор: Kenji Sugiura,Yudai Tanaka,Kota Funayama,Ryoichi EHARA,Katsufumi Okamoto. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-06-13.

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Номер патента: US20240276725A1. Автор: Koichi Matsuno,Senaka Kanakamedala,Adarsh RAJASHEKHAR. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-08-15.

Method of forming floating gate array of flash memory device

Номер патента: US20070141785A1. Автор: Jong Choi. Владелец: Dongbu Electronics Co Ltd. Дата публикации: 2007-06-21.

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Номер патента: RU2536336C2. Автор: Брайан БЕННИ,Томас Ли МИЛЛЕР,Дэвид Энтони ХЭТТОН,Дорон М. ЭЛЛИОТТ,Гари ЯБЛОНСКИЙ. Владелец: Форд Глобал Технолоджис, ЛЛК. Дата публикации: 2014-12-20.

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Номер патента: US12082414B2. Автор: Jianzhong Wu,Zongke Xu,Jingjing Geng. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-09-03.

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Номер патента: US20240323782A1. Автор: Jie Deng. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-09-26.

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Номер патента: EP4413842A1. Автор: Grant J. Wonderlich,Timothy A. Wilcox,Bradley W. Van de Woestyne,Zimin Vilar. Владелец: Deere and Co. Дата публикации: 2024-08-14.

Apparatus for controlling wide-band signal transmission gain in wireless communication systems and signal processing method of the same

Номер патента: US09634699B2. Автор: Yong Su LEE. Владелец: Electronics and Telecommunications Research Institute ETRI. Дата публикации: 2017-04-25.

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Номер патента: US12048149B2. Автор: Zhong Zhang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-07-23.

Systems and methods of decoding error correction code of a memory device with dynamic bit error estimation

Номер патента: US12009840B2. Автор: Yasuhiko Kurosawa,Avi STEINER,Ofir Kanter. Владелец: Kioxia Corp. Дата публикации: 2024-06-11.

Three-dimensional memory device including composite backside metal fill structures and methods for forming the same

Номер патента: US20240196619A1. Автор: Ryo KAMBAYASHI,Kazuto Ohsawa. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-06-13.

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Номер патента: US5659540A. Автор: David X. Chen,Deepak Mathur,L. David Danenberg. Владелец: General Datacomm Inc. Дата публикации: 1997-08-19.

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Номер патента: US20100153437A1. Автор: Jianming Zhou,Congxing Ouyang,Guanghai Zhang. Владелец: China Mobile Communications Group Co Ltd. Дата публикации: 2010-06-17.

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Номер патента: US20240064983A1. Автор: Tomohiro Kubo,Takashi Kashimura,Johann Alsmeier. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-02-22.

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Номер патента: WO2024123475A1. Автор: Kenji Sugiura,Yudai Tanaka,Kota Funayama,Ryoichi EHARA,Katsufumi Okamoto. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-06-13.

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Номер патента: EP4290998A3. Автор: Jianzhong Wu,Zongke Xu,Jingjing Geng. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-02-14.

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Номер патента: EP4290998A2. Автор: Jianzhong Wu,Zongke Xu,Jingjing Geng. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-12-13.

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Номер патента: US11889573B2. Автор: Sung Won Yoon. Владелец: SENA TECHNOLOGIES Inc. Дата публикации: 2024-01-30.

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Номер патента: WO2023239442A1. Автор: Raghuveer S. Makala,Rahul Sharangpani,Fumitaka Amano,Ryo KAMBAYASHI. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-12-14.

Three-dimensional memory device including laterally-undulating memory material layers and methods for forming the same

Номер патента: US11877452B2. Автор: Zhixin Cui,Tatsuya Hinoue. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-01-16.

System and method for diagnosing field device

Номер патента: RU2678242C2. Автор: Гордон Кэмерон МУИР,Линда Роуз ТАРАЛЬДСОН,Джеффри Аллен ВЕЙКФИЛД. Владелец: Теском Корпорейшн. Дата публикации: 2019-01-24.

Testing system and method

Номер патента: US09881510B2. Автор: Daniel Scott Groninger,Robert Carroll Ward,Francois Xavier De Fromont,Chad Martin Shaffer. Владелец: General Electric Co. Дата публикации: 2018-01-30.

System and methods of determining acceleration of a shaft

Номер патента: CA3051342A1. Автор: Gabriel Meunier,Michael Conciatori. Владелец: Pratt and Whitney Canada Corp. Дата публикации: 2020-03-24.

Universal tolling system and method

Номер патента: US09595139B1. Автор: David S Breed,Vyacheslav Sokurenko. Владелец: Intelligent Technologies International Inc. Дата публикации: 2017-03-14.

Enhanced physiological monitoring devices and computer-implemented systems and methods of remote physiological monitoring of subjects

Номер патента: US12089914B2. Автор: Kurt Stump. Владелец: Sempulse Corp. Дата публикации: 2024-09-17.

Systems and methods for determining the cleanliness of a surface

Номер патента: US09839712B2. Автор: G. Marco Bommarito. Владелец: 3M Innovative Properties Co. Дата публикации: 2017-12-12.

System and method of controlling marine vessels

Номер патента: US12030598B2. Автор: Amir Eyal,Ofer Sela,Lawrence NATAN,Yaron Shlomo CARMON,Yehonatan OFIR. Владелец: Aqua Marina Yachts 1995 Ltd. Дата публикации: 2024-07-09.

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Номер патента: US20240185945A1. Автор: Xiaoqun Mo,Chia-Hua April HSU. Владелец: Wm Wrigley Jr Co. Дата публикации: 2024-06-06.

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Номер патента: WO2024107878A9. Автор: Xiaoqun Mo,Chia-Hua April HSU. Владелец: WM. WRIGLEY JR. COMPANY. Дата публикации: 2024-07-18.

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Номер патента: AU2024205620A1. Автор: Hung Ngoc Nguyen. Владелец: ARISTOCRAT TECHNOLOGIES AUSTRALIA PTY LTD. Дата публикации: 2024-08-29.

Fault alarm system and method for transmitting fault messages

Номер патента: MY140764A. Автор: Claus-Markus Pfeffer. Владелец: Continental Automotive GmbH. Дата публикации: 2010-01-15.

Non-invasive systems and methods for detecting mental impairment

Номер патента: US20200029880A1. Автор: Daniel Sobek,Antonio H. LARA,Husam Katnani. Владелец: HI LLC. Дата публикации: 2020-01-30.

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Номер патента: AU2024204619A1. Автор: Antoon Visser. Владелец: ARISTOCRAT TECHNOLOGIES AUSTRALIA PTY LTD. Дата публикации: 2024-07-18.

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Номер патента: US20180308318A1. Автор: Antoon Christiaan Visser. Владелец: ARISTOCRAT TECHNOLOGIES AUSTRALIA PTY LTD. Дата публикации: 2018-10-25.

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Номер патента: US20190295379A1. Автор: Antoon Christiaan Visser. Владелец: ARISTOCRAT TECHNOLOGIES AUSTRALIA PTY LTD. Дата публикации: 2019-09-26.

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Номер патента: US20240112545A1. Автор: HUA Xu,Daniel Marks,Sean DAVIS,John Milliner, III,Dinesh Dua. Владелец: Aristocrat Technologies Inc. Дата публикации: 2024-04-04.

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Номер патента: RU2717741C2. Автор: Доминик ТЕЛЬЕ,Бастьен БУБИ,Флориан ТУРШЕ. Владелец: Прайметалз Текнолоджиз Франс Сас. Дата публикации: 2020-03-25.

Smart bed systems and methods of operation thereof

Номер патента: SG10201709822UA. Автор: Shu-Chen Yang,Ying-Chieh Chen,Hsing-Hung Chen,Chih-Huan Liu,Ta-Hsiang Chen. Владелец: Bedding World Co Ltd. Дата публикации: 2018-07-30.

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Номер патента: US20240279192A1. Автор: Wanli Lu,Jie Ma. Владелец: B Fctl Co Ltd. Дата публикации: 2024-08-22.

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Номер патента: US20240060137A1. Автор: Qi Zhang,Weizhi Chen,Yulong Li,Yuanyuan HONG,Fang Lv,Tiancheng Han,Shunli YANG,Peiyao NIE. Владелец: Genecast (beijing) Biotechnology Co Ltd. Дата публикации: 2024-02-22.

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Номер патента: US20230309305A1. Автор: Kang Sik Choi. Владелец: SK hynix Inc. Дата публикации: 2023-09-28.

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Номер патента: EP1480273A3. Автор: Jung-hyun Lee,Young-soo Park,Won-Tae Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2006-02-08.

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Номер патента: US11778805B2. Автор: Jooho Lee,Younsoo Kim,Kyooho JUNG,Jeong-Gyu SONG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-10-03.

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Номер патента: US20210111181A1. Автор: Sang Bum Lee. Владелец: SK hynix Inc. Дата публикации: 2021-04-15.

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Номер патента: US11444092B2. Автор: Sang Bum Lee. Владелец: SK hynix Inc. Дата публикации: 2022-09-13.

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Номер патента: US12082395B2. Автор: Jooho Lee,Younsoo Kim,Kyooho JUNG,Jeong-Gyu SONG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-09-03.

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Номер патента: US20240373620A1. Автор: Jooho Lee,Younsoo Kim,Kyooho JUNG,Jeong-Gyu SONG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-11-07.

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Номер патента: US20220208856A1. Автор: Eng Huat Toh,Shyue Seng Tan,Xinshu CAI. Владелец: GLOBALFOUNDRIES SINGAPORE PTE LTD. Дата публикации: 2022-06-30.

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Номер патента: US20070045701A1. Автор: Jung-hyun Lee,Sang-Bong Bang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2007-03-01.

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Номер патента: US09490130B2. Автор: Youngwoo Park,Jin-Soo Lim,Hansoo Kim,Byoungkeun Son,Sung-hwan Jang,Jong In Yun. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-11-08.

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Номер патента: US09514946B2. Автор: Masao Inoue,Yoshiki Maruyama,Atsushi Yoshitomi,Tomoya Saito. Владелец: Renesas Electronics Corp. Дата публикации: 2016-12-06.

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Номер патента: US09620515B2. Автор: Tatsuya Kato,Satoshi Nagashima,Keisuke Kikutani. Владелец: Toshiba Corp. Дата публикации: 2017-04-11.

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Номер патента: US20030001186A1. Автор: Soon-Yong Kweon. Владелец: Hynix Semiconductor Inc. Дата публикации: 2003-01-02.

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Номер патента: US20230007879A1. Автор: Kui Zhang. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-01-12.

Non-volatile semiconductor memory device and method of manufacturing the same, volatile semiconductor memory device and method of manufacturing the same, and semiconductor memory device incorporating the non-volatile semiconductor memory device with the volatile semiconductor memory device and method of manufacturing thereof

Номер патента: KR100391559B1. Автор: 요시카와구니요시. Владелец: 가부시끼가이샤 도시바. Дата публикации: 2003-07-12.

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Номер патента: US11882704B2. Автор: Nam Jae LEE. Владелец: SK hynix Inc. Дата публикации: 2024-01-23.

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Номер патента: US20210104527A1. Автор: Yong-Hoon Son. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-04-08.

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Номер патента: US20220285356A1. Автор: Yong-Hoon Son. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-09-08.

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Номер патента: US11950405B2. Автор: Yong-Hoon Son. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-04-02.

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Номер патента: US20180277546A1. Автор: Li-Wei Feng,Ying-Chiao Wang,Chien-Ting Ho,Tsung-Ying Tsai. Владелец: Fujian Jinhua Integrated Circuit Co Ltd. Дата публикации: 2018-09-27.

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Номер патента: US11778807B2. Автор: Jungwoo Song,Jun Ho Lee,Yong Kwan Kim,Kwangmin Kim,Sangyeon HAN,Hyuckjin Kang,Seguen Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-10-03.

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Номер патента: US9166012B2. Автор: Jong-Min Lee,Jinhyun Shin,Jae-Hwang Sim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2015-10-20.

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Номер патента: US20240049469A1. Автор: Gil Bok CHOI,Dae Hwan YUN. Владелец: SK hynix Inc. Дата публикации: 2024-02-08.

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Номер патента: US11812613B2. Автор: Gil Bok CHOI,Dae Hwan YUN. Владелец: SK hynix Inc. Дата публикации: 2023-11-07.

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Номер патента: US11980027B2. Автор: Sang Bum Lee. Владелец: SK hynix Inc. Дата публикации: 2024-05-07.

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Номер патента: US20240090214A1. Автор: Jae Taek Kim. Владелец: SK hynix Inc. Дата публикации: 2024-03-14.

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Номер патента: US20040159871A1. Автор: Yoshiyuki Shibata. Владелец: Matsushita Electric Industrial Co Ltd. Дата публикации: 2004-08-19.

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Номер патента: US20020110971A1. Автор: Yoshiyuki Shibata. Владелец: Matsushita Electric Industrial Co Ltd. Дата публикации: 2002-08-15.

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Номер патента: US20230389315A1. Автор: Jae Young Oh. Владелец: SK hynix Inc. Дата публикации: 2023-11-30.

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Номер патента: US4849801A. Автор: Toshiaki Yamanaka,Yoshio Sakai,Toshiaki Masuhara,Katsuhiro Shimohigashi,Osamu Minato,Shigeru Honjyo. Владелец: HITACHI LTD. Дата публикации: 1989-07-18.

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Номер патента: US11805710B2. Автор: Heejung Kim,Taehong Min,Chorong Park,Joohee SEO,Eunsuk HWANG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-10-31.

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Номер патента: US11856783B2. Автор: Yi-Ching Liu,Chia-En HUANG,Ya-Yun Cheng,Meng-Han LIN,Peng-Chun Liou. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-12-26.

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Номер патента: US20110176346A1. Автор: Yukio KATAMURA. Владелец: Toshiba Corp. Дата публикации: 2011-07-21.

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Номер патента: US20120112155A1. Автор: Scott Brad Herner. Владелец: Crossbar Inc. Дата публикации: 2012-05-10.

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Номер патента: US20240315056A1. Автор: Lei Ren,Yuxuan Ren,Hu DING,Yanwei Shi,Xuelian Yu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-09-19.

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Номер патента: US8148767B2. Автор: Yoon-dong Park,June-mo Koo,Kyoung-lae Cho. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2012-04-03.

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Номер патента: KR100652410B1. Автор: 이선우,최영문. Владелец: 삼성전자주식회사. Дата публикации: 2006-12-01.

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Номер патента: US20240268128A1. Автор: Yu-Ming Lin,Sai-Hooi Yeong,Han-Jong Chia,Chih-Yu Chang,Meng-Han LIN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-08.

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Номер патента: US09773795B2. Автор: Jinhyun Shin,Jae-Hwang Sim,Hojun SEONG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-09-26.

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Номер патента: WO2007117851A1. Автор: Chandra Mouli,Di Li. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2007-10-18.

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Номер патента: US20200219934A1. Автор: ByeongJu Bae,Duckhee Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-07-09.

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Номер патента: US20070126045A1. Автор: Ansoon Kim,Han Young Yu,Sung-Yool Choi,Chil Seong Ah,Min Ki Ryu. Владелец: Electronics and Telecommunications Research Institute ETRI. Дата публикации: 2007-06-07.

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Номер патента: US20230225121A1. Автор: Tomoya INDEN. Владелец: Kioxia Corp. Дата публикации: 2023-07-13.

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Номер патента: US20170236830A1. Автор: INATSUKA Takuya. Владелец: . Дата публикации: 2017-08-17.

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Номер патента: US20240234339A9. Автор: Teng-Hao Yeh,Cheng-Yu Lee. Владелец: Macronix International Co Ltd. Дата публикации: 2024-07-11.

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Номер патента: US20140103283A1. Автор: Kwon Hong,Kee-Jeung Lee,Beom-Yong Kim,Woo-young Park. Владелец: SK hynix Inc. Дата публикации: 2014-04-17.

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Номер патента: US20240355736A1. Автор: Min WEN,Zhen Pan,Chengbao Zhou. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-10-24.

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Номер патента: US20040171217A1. Автор: Chang-Rok Moon,Jin-Kuk Chung. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2004-09-02.

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Номер патента: US7118969B2. Автор: Chang-Rok Moon,Jin-Kuk Chung. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2006-10-10.

Metal thin film and method of manufacturing the same, dielectric capacitor and method of manufacturing the same, and semiconductor memory device

Номер патента: EP1587146A3. Автор: Tatsuo Sawasaki,Kenichi Tsuchiya,Kenichi Kurokawa,Teruo Tagawa. Владелец: Seiko Epson Corp. Дата публикации: 2007-05-30.

Semiconductor memory device, method for its formation, memory cell and method for their training

Номер патента: DE102005060083B4. Автор: Dr. Bach Lars. Владелец: Qimonda AG. Дата публикации: 2014-08-28.

Semiconductor device, semiconductor memory and CMOS semiconductor integrated circuit using the same, and method of manufacturing the semiconductor device

Номер патента: JP3362712B2. Автор: 計廣 竹中,晃 藤沢. Владелец: Seiko Epson Corp. Дата публикации: 2003-01-07.

Three dimensional memory device containing aluminum source contact via structure and method of making thereof

Номер патента: US09478495B1. Автор: Peter Rabkin,Jayavel Pachamuthu,Christopher Petti,Jilin XIA. Владелец: SanDisk Technologies LLC. Дата публикации: 2016-10-25.

Non-volatile memory device with filament confinement

Номер патента: US20230052035A1. Автор: Eng Huat Toh,Shyue Seng Tan,Desmond Jia Jun Loy. Владелец: GLOBALFOUNDRIES SINGAPORE PTE LTD. Дата публикации: 2023-02-16.

Non-volatile memory device with charge trapping layer and method for fabricating the same

Номер патента: US20090108332A1. Автор: Ki Hong Lee,Jae Young Park,Moon Sig Joo,Ki Seon Park,Yong Top Kim. Владелец: Hynix Semiconductor Inc. Дата публикации: 2009-04-30.

SEMICONDUCTOR MEMORY DEVICE HAVING PILLARS ON A PERIPHERAL REGION AND METHOD OF MANUFACTURING THE SAME

Номер патента: US20170213845A1. Автор: Baba Yasuyuki. Владелец: . Дата публикации: 2017-07-27.

Semiconductor memory device comprising two-story capacitor bottom electrode and method of manufacturing the same

Номер патента: KR100450678B1. Автор: 박제민. Владелец: 삼성전자주식회사. Дата публикации: 2004-10-01.

Semiconductor memory device having multiple tunnel junction layer pattern and method of fabricating the same

Номер патента: KR100391984B1. Автор: 이지혜,김우식. Владелец: 삼성전자주식회사. Дата публикации: 2003-07-22.

Memory devices having reduced interference between floating gates and methods of fabricating such devices

Номер патента: US20130237031A1. Автор: Seiichi Aritome. Владелец: Micron Technology Inc. Дата публикации: 2013-09-12.

Memory devices having reduced interference between floating gates and methods of fabricating such devices

Номер патента: US20110266610A1. Автор: Seiichi Aritome. Владелец: Micron Technology Inc. Дата публикации: 2011-11-03.

Semiconductor device, fabricating method, memory device and device system

Номер патента: US20240312925A1. Автор: Peng Chen,Xin Feng,XinRu Zeng,Ping Mo. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-09-19.

Three-dimensional memory devices having a shaped epitaxial channel portion and method of making thereof

Номер патента: US09754958B2. Автор: Raghuveer S. Makala,Jayavel Pachamuthu,Sateesh KOKA,Somesh Peri. Владелец: SanDisk Technologies LLC. Дата публикации: 2017-09-05.

Method of forming isolation film of semiconductor memory device

Номер патента: KR100822606B1. Автор: 이상수,신승우,동차덕,정우리,손현수. Владелец: 주식회사 하이닉스반도체. Дата публикации: 2008-04-16.

Method of forming isolation film of semiconductor memory device

Номер патента: KR101002474B1. Автор: 김은수,조휘원,조종혜. Владелец: 주식회사 하이닉스반도체. Дата публикации: 2010-12-17.

Manufacturing method of multi-layer capacitor of semiconductor memory device

Номер патента: KR940009633B1. Автор: 김재갑. Владелец: 정몽헌. Дата публикации: 1994-10-15.

A semiconductor memory device capable of electrically erasing/writing information and manufactureing method of the same

Номер патента: KR0126235B1. Автор: 마사히로 시미주,마사요시 시라하따,다까시 꾸로이,다께히사 야마구찌. Владелец: 기아오까 다까시. Дата публикации: 1997-12-29.

Method of Forming Isolation Layer of Semiconductor Memory Device

Номер патента: US20080206957A1. Автор: Min Sik Jang,Kwang Hyun Yun. Владелец: Hynix Semiconductor Inc. Дата публикации: 2008-08-28.

Method of Forming Isolation Layer of Semiconductor Memory Device

Номер патента: US20090170321A1. Автор: Whee Won Cho,Jong Hye Cho. Владелец: Hynix Semiconductor Inc. Дата публикации: 2009-07-02.

Method of forming isolation structure of semiconductor memory device

Номер патента: US20080242047A1. Автор: Doo Ho Choi,Kwang Hyun Yun,Wan Sup SHIN. Владелец: Hynix Semiconductor Inc. Дата публикации: 2008-10-02.

Manufacturing method of capacitor of highly integrated semiconductor memory device

Номер патента: KR940009612B1. Автор: 조현진,오경석,안지홍. Владелец: 김광호. Дата публикации: 1994-10-15.

Method of forming capacitor of a semiconductor memory device

Номер патента: US6673668B2. Автор: Ki-Seon Park,Kyong-Min Kim,Han-Sang Song. Владелец: Hynix Semiconductor Inc. Дата публикации: 2004-01-06.

Three-dimensional memory device including ferroelectric-metal-insulator memory cells and methods of making the same

Номер патента: US20210358931A1. Автор: Yanli Zhang,Fei Zhou,Raghuveer S. Makala,Rahul Sharangpani,Seung-Yeul Yang,Adarsh RAJASHEKHAR. Владелец: SanDisk Technologies LLC. Дата публикации: 2021-11-18.

METHOD OF FABRICATING A THREE-DIMENTIONAL SEMICONDUCTOR MEMORY DEVICE

Номер патента: US20130164894A1. Автор: KIM Hansoo,SON Byoungkeun,Kim Jinho,Lee Wonjun,JANG Daehyun. Владелец: . Дата публикации: 2013-06-27.

METHOD OF FABRICATING A THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE

Номер патента: US20150318302A1. Автор: PARK Sang-Yong,PARK Jintaek. Владелец: . Дата публикации: 2015-11-05.

Method of fabricating a capacitor for semiconductor memory device

Номер патента: KR940006677B1. Автор: 양수길,최원택. Владелец: 김광호. Дата публикации: 1994-07-25.

Method of forming pad layer in semiconductor memory device

Номер патента: KR970054130A. Автор: 이주영,장순규. Владелец: 김광호. Дата публикации: 1997-07-31.

Semiconductor memory device having tungsten line with low resistance and method for manufacturing the same

Номер патента: KR100555514B1. Автор: 김락환,박인선,이현덕,김영천,김현영. Владелец: 삼성전자주식회사. Дата публикации: 2006-03-03.

Semiconductor memory device for reducing area of fuse circuit and method for fabricating the same

Номер патента: KR100570066B1. Автор: 임성혁. Владелец: 주식회사 하이닉스반도체. Дата публикации: 2006-04-10.

Method of fabricating capacitor in ferroelectric semiconductor memory device

Номер патента: KR100717767B1. Автор: 최은석,염승진. Владелец: 주식회사 하이닉스반도체. Дата публикации: 2007-05-11.

Method of fabricating storage capacitor in semiconductor memory device, and storage capacitor structure

Номер патента: US6911372B2. Автор: Wook-sung Son. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2005-06-28.

Semiconductor memory device having plug contacted to capacitor electrode and method for fabricating the same

Номер патента: TW512528B. Автор: Kwon Hong. Владелец: Hynix Semiconductor Inc. Дата публикации: 2002-12-01.

Method of manufacturing a non-volatile semiconductor memory device

Номер патента: DE69511320T2. Автор: Jeong-Hyuk Choi,Jeong-Hyong Yi. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2000-01-13.

Method of manufacturing a non-volatile semiconductor memory device

Номер патента: EP0827197A3. Автор: Akihiro Nakamura,Masanori Noda. Владелец: Sony Corp. Дата публикации: 1998-03-11.

Method of manufacturing a non-volatile semiconductor memory device

Номер патента: DE19813457C2. Автор: Woong-Lim Choi,Kyeong-Man Ra. Владелец: LG Semicon Co Ltd. Дата публикации: 2001-09-27.

Method of manufacturing a capacitor for semiconductor memory devices

Номер патента: TW471097B. Автор: Dong-Su Park,Se-Min Lee. Владелец: Hyundai Electronics Ind. Дата публикации: 2002-01-01.

Three-dimensional memory device containing low resistance source-level contact and method of making thereof

Номер патента: US20210408031A1. Автор: Fei Zhou,Raghuveer S. Makala,Rahul Sharangpani,Adarsh RAJASHEKHAR. Владелец: SanDisk Technologies LLC. Дата публикации: 2021-12-30.

Three-dimensional memory device containing separately formed drain select transistors and method of making thereof

Номер патента: EP3686930A1. Автор: Shigehiro Fujino,James Kai,Johann Alsmeier,Fumiaki TOYAMA,Yuki Mizutani. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-07-29.

Three-dimensional memory device containing separately formed drain select transistors and method of making thereof

Номер патента: EP3602628A1. Автор: Shigehiro Fujino,James Kai,Johann Alsmeier,Fumiaki TOYAMA,Yuki Mizutani. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-02-05.

Three-dimensional memory device with electrically isolated support pillar structures and method of making thereof

Номер патента: US09978766B1. Автор: Takeshi Kawamura,Naohiro Hosoda,Kota Funayama,Yoko Furihata. Владелец: SanDisk Technologies LLC. Дата публикации: 2018-05-22.

Three-dimensional memory device containing separately formed drain select transistors and method of making thereof

Номер патента: US09922987B1. Автор: Shigehiro Fujino,James Kai,Johann Alsmeier,Fumiaki TOYAMA,Yuki Mizutani. Владелец: SanDisk Technologies LLC. Дата публикации: 2018-03-20.

Three-dimensional memory device having integrated support and contact structures and method of making thereof

Номер патента: US09853038B1. Автор: Zhixin Cui. Владелец: SanDisk Technologies LLC. Дата публикации: 2017-12-26.

Three-dimensional memory device having multi-layer diffusion barrier stack and method of making thereof

Номер патента: US09748174B1. Автор: Fumitaka Amano. Владелец: SanDisk Technologies LLC. Дата публикации: 2017-08-29.

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Номер патента: US20160086966A1. Автор: CHENG CHUN-MIN,Jhang Pei-Ci. Владелец: . Дата публикации: 2016-03-24.

Three-dimensional nand memory device and fabrication method

Номер патента: US20240237338A9. Автор: Wei Xu,Zongliang Huo,Lei Xue,Longxiang Yan. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-07-11.

Manufacturing method of three-dimensional non-volatile memory device including a selection gate having an L shape

Номер патента: US09559114B2. Автор: Ki Hong Lee,Seung Ho Pyi,Sung Chul Shin. Владелец: SK hynix Inc. Дата публикации: 2017-01-31.

Cross-point memory and methods for fabrication of same

Номер патента: US20200027926A1. Автор: Samuele Sciarrillo. Владелец: Micron Technology Inc. Дата публикации: 2020-01-23.

Cross-point memory and methods for fabrication of same

Номер патента: US20190013359A1. Автор: Samuele Sciarrillo. Владелец: Micron Technology Inc. Дата публикации: 2019-01-10.

Cross-point memory and methods for fabrication of same

Номер патента: US20180138242A1. Автор: Samuele Sciarrillo. Владелец: Micron Technology Inc. Дата публикации: 2018-05-17.

Clothes dryer wireless moisture data transfer systems and energy-efficient methods of operation

Номер патента: US09915023B2. Автор: Ashutosh Kulkarni,Dongsoo Shin,Jaeseok Noh,Younghoon Kim,Jaeyoung Jang,Jaebong LEE. Владелец: Haier US Appliance Solutions Inc. Дата публикации: 2018-03-13.

Systems and methods for control of operating life of a gas turbine

Номер патента: US09476361B2. Автор: Lewis Berkley Davis, Jr.,Rex Allen Morgan,Scott Richard Baker,Harold Lamar Jordan. Владелец: General Electric Co. Дата публикации: 2016-10-25.

System and method for prediction of operational safety of manufacturing vessels

Номер патента: US20240085114A1. Автор: Yakup Bayram,Suat Bayram,Hande Alp,Elif Rana Dama,Öncel Umut Türer. Владелец: PANERATECH Inc. Дата публикации: 2024-03-14.

An improved mechanical turbine system and an associated method of working thereof

Номер патента: WO2022208510A1. Автор: Rishi Gupta. Владелец: Rishi Gupta. Дата публикации: 2022-10-06.

Full safe hydro-mechanical lock system and the operation method of this system

Номер патента: WO2021242210A1. Автор: Birol Ozer. Владелец: Özkoç Hidrolik Makina San Ve Tic A.Ş. Дата публикации: 2021-12-02.

Full safe hydro-mechanical lock system and the operation method of this system

Номер патента: EP4157622A1. Автор: Birol Ozer. Владелец: Ozkoc Hidrolik Makina San Ve Tic AS. Дата публикации: 2023-04-05.

Movable partition systems and components thereof, methods of installing movable partition systems, and methods of moving a movable partition

Номер патента: US20120325414A1. Автор: W. Michael Coleman,Michael D. George,John G. Garrett, Iii,Paul Saccomanno. Владелец: Won-Door Corp. Дата публикации: 2012-12-27.

Clean room module, clean room system and self-locking method of clean room module

Номер патента: EP4355970A1. Автор: Ho Chi WONG,Ka Wai CHAN,Tak Man LEUNG,Lap Fung CHAN,Fei Long CHEN. Владелец: Intelligent Precision Micro Systems Ltd. Дата публикации: 2024-04-24.

Agricultural system and computer implemented method of controlling such

Номер патента: EP4371385A1. Автор: Elijah B Garner,Cary S Hubner,Kelby J Krueger. Владелец: Deere and Co. Дата публикации: 2024-05-22.

Agricultural system and computer implemented method of controlling such

Номер патента: EP4257379A1. Автор: Mark D Klein,Benjamin C Potter,Eric A Keen,Lee A Johnson. Владелец: Deere and Co. Дата публикации: 2023-10-11.

Agricultural system and computer implemented method of controlling such

Номер патента: EP4371386A1. Автор: Elijah B Garner,Cary S Hubner,Kelby J Krueger. Владелец: Deere and Co. Дата публикации: 2024-05-22.

Compression connector and mounting assembly for composite cables and methods for their manufacture and use

Номер патента: RU2537967C2. Автор: Колин МАККАЛОУ,Эрве Е. ДЕВЕ,Майкл Ф. ГРЕЗЕР. Владелец: 3М Инновейтив Пропертиз Компани. Дата публикации: 2015-01-10.

Sputtering target and method of manufacturing the same, and memory device manufacturing method

Номер патента: US20220162742A1. Автор: Kazuhiro Ohba,Katsuhisa Aratani,Shuichiro Yasuda,Hiroaki Sei. Владелец: Sony Semiconductor Solutions Corp. Дата публикации: 2022-05-26.

Thin battery separators and methods

Номер патента: US20240194956A1. Автор: Xiaomin Zhang,Paul M. Halmo,Lie Shi,Zhengming Zhang,Paul D. VIDO,Daniel R. ALEXANDER,Jill V. Watson. Владелец: Celgard LLC. Дата публикации: 2024-06-13.

Thin battery separators and methods

Номер патента: US09666847B2. Автор: Xiaomin Zhang,Paul M. Halmo,Lie Shi,Zhengming Zhang,Paul D. VIDO,Daniel R. ALEXANDER,Jill V. Watson. Владелец: Celgard LLC. Дата публикации: 2017-05-30.

Semiconductor memory device

Номер патента: US12082410B2. Автор: Hyung Joon Kim,Hyun Jung Lee,Yong-Hoon Son. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-09-03.

Semiconductor memory devices

Номер патента: US12101944B2. Автор: Eng Huat Toh,Shyue Seng Tan,Desmond Jia Jun Loy. Владелец: GLOBALFOUNDRIES SINGAPORE PTE LTD. Дата публикации: 2024-09-24.

Non-volatile semiconductor memory device and method of manufacturing the same

Номер патента: US20070212835A1. Автор: Eiji Kamiya. Владелец: Individual. Дата публикации: 2007-09-13.

Non-volatile semiconductor memory device and method of manufacturing the same

Номер патента: US20110195558A1. Автор: Eiji Kamiya. Владелец: Individual. Дата публикации: 2011-08-11.

Non-volatile semiconductor memory device and method of manufacturing the same

Номер патента: US20100144115A1. Автор: Eiji Kamiya. Владелец: Individual. Дата публикации: 2010-06-10.

Non-volatile semiconductor memory device and method of manufacturing the same

Номер патента: US7678663B2. Автор: Eiji Kamiya. Владелец: Toshiba Corp. Дата публикации: 2010-03-16.

Semiconductor memory and method of manufacturing same

Номер патента: US6326659B1. Автор: Takashi Ichikawa. Владелец: Mitsubishi Electric Corp. Дата публикации: 2001-12-04.

Semiconductor memory device for eliminating floating body effect and method of fabricating the same

Номер патента: US6806140B1. Автор: Kyung-Ho Kim,Chang-Hyun Kim,Won-suk Yang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2004-10-19.

Semiconductor memory device and method of manufacturing the semiconductor memory device

Номер патента: US20240074189A1. Автор: Hyun Sub KIM. Владелец: SK hynix Inc. Дата публикации: 2024-02-29.

Semiconductor memory devices with electrically isolated stacked bit lines and methods of manufacture

Номер патента: US20230380310A1. Автор: Tung Ying Lee,Shao-Ming Yu,Kai-Tai Chang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-23.

Semiconductor memory devices with electrically isolated stacked bit lines and methods of manufacture

Номер патента: US11849655B2. Автор: Tung Ying Lee,Shao-Ming Yu,Kai-Tai Chang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-12-19.

Call centre having operator workstations, a switching device and a call distribution system, and a method of operating a call centre of this kind

Номер патента: US20070041563A1. Автор: Christian Maierhofer,Bernhard Plakolm. Владелец: SIEMENS AG. Дата публикации: 2007-02-22.

Fluid-powered imaging system and inspection device, method of operating an imaging device and method of operating an imaging taking device using fluid

Номер патента: TWI223564B. Автор: Peter Woodstock. Владелец: Imaging & Sensing Tech Corp. Дата публикации: 2004-11-01.

Method of manufacturing semiconductor memory and semiconductor memory

Номер патента: US11792975B2. Автор: XIANG Liu. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-10-17.

Semiconductor memory with memory cells comprising a vertical selection transistor, and method for fabricating it

Номер патента: TW556341B. Автор: Dirk Schumann,Harald Seidl,Martin Gutsche,Bernd Goebel,Joern Luetzen. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2003-10-01.

Semiconductor memory device and the fabrication method thereof

Номер патента: US5324680A. Автор: Kyu-Pil Lee,Yong-Jik Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 1994-06-28.

Method of manufacturing a three dimensional semiconductor memory device and the three dimensional semiconductor memory device fabricated by the method

Номер патента: KR102091729B1. Автор: 이준석,황기현,임헌형,이웅. Владелец: 삼성전자 주식회사. Дата публикации: 2020-03-20.

System and method for storage of operational parameters on components

Номер патента: US20040078454A1. Автор: Michel Nguyen,Seth Abrahams,Brian Osterhout. Владелец: Sun Microsystems Inc. Дата публикации: 2004-04-22.

Structurally-embedded construction, design, and maintenance record data management system and related method

Номер патента: US09445522B2. Автор: Taeho Um. Владелец: Individual. Дата публикации: 2016-09-13.

Memory element and method of manufacturing the same, and memory device

Номер патента: US20120145987A1. Автор: Shuichiro Yasuda,Hiroaki Sei. Владелец: Sony Corp. Дата публикации: 2012-06-14.

Apparatus and method for switching wireless access technology in wireless communication system

Номер патента: US20210007026A1. Автор: Moonyoung JEONG,Jaehyun HWANG,Youngsung KHO,Kyuho HAN,Joonseo LEE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-01-07.

Apparatus and method for detecting false alarm of decryption in wireless communication system

Номер патента: US12068852B2. Автор: Jonghwan KIM,Min Jang,Hongsil JEONG,Sanghyo Kim,Hyunjae Lee,Hyosang Ju,Hyuntack LIM. Владелец: Sungkyunkwan University Research and Business Foundation. Дата публикации: 2024-08-20.

Memory element, method of manufacturing the same, and semiconductor memory device

Номер патента: JP5446393B2. Автор: 潤 角野. Владелец: Sony Corp. Дата публикации: 2014-03-19.

A non-volatile semiconductor memory device having nand-type memory cell array and method for producing the same

Номер патента: KR100224761B1. Автор: 김동준,최정달. Владелец: 윤종용. Дата публикации: 1999-10-15.

Device and method for managing connections in wireless communication system

Номер патента: US20210160946A1. Автор: Jisoo SONG,Jeongyeob OAK. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-05-27.

Non-volatile memory device with filament confinement

Номер патента: US11716914B2. Автор: Juan Boon Tan,Jianxun Sun,Tupei Chen. Владелец: GLOBALFOUNDRIES SINGAPORE PTE LTD. Дата публикации: 2023-08-01.

Spin orbit torque materials, magnetic memory device including the same, and method for fabricating the spin orbit torque materials

Номер патента: EP4447644A1. Автор: Daesu Lee,Won Joon CHO,Yongjoo JO. Владелец: POSTECH Research and Business Development Foundation. Дата публикации: 2024-10-16.

Spin orbit torque materials, magnetic memory device including the same, and method for fabricating the spin orbit torque materials

Номер патента: US20240349623A1. Автор: Daesu Lee,Won Joon CHO,Yongjoo JO. Владелец: Pohang University of Science and Technology Foundation POSTECH. Дата публикации: 2024-10-17.

Systems and methods for using metadata to search for related computer infrastructure components

Номер патента: US09544192B2. Автор: Daniel A. Ruggeri. Владелец: Mastercard International Inc. Дата публикации: 2017-01-10.

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Номер патента: RU2355470C2. Автор: Григорий Лев Соловейчик,Джонатан Ллойд МЭЙЛ,Элисон Лиана ПАЛМАТЬЕ,Тереза Гросела РОША,Дан ХАНКУ,Грегори Ли УОРНЕР,Эрик Джордж БУДЕШЕЙМ,Стенли Тереза БАДДЛ,Дженифер Кэтлин РЕДЛАЙН,Григорий Лев Соловейчик (US),Дан ХАНКУ (US),Джонатан Ллойд МЭЙЛ (US),Элисон Лиана ПАЛМАТЬЕ (US),Грегори Ли УОРНЕР (US),Дженифер Кэтлин РЕДЛАЙН (US),Эрик Джордж БУДЕШЕЙМ (US),Тереза Гросела РОША (US),Стенли Тереза БАДДЛ (US). Владелец: Дженерал Электрик Компани. Дата публикации: 2009-05-20.

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Номер патента: US20120004073A1. Автор: Zhang Xinxin,TANG Xiaohua,LUO Fei,Xiao Zhigao. Владелец: . Дата публикации: 2012-01-05.

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Номер патента: US20120003831A1. Автор: . Владелец: . Дата публикации: 2012-01-05.

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Номер патента: US20120002491A1. Автор: . Владелец: HYNIX SEMICONDUCTOR INC.. Дата публикации: 2012-01-05.

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Номер патента: US20120002455A1. Автор: . Владелец: . Дата публикации: 2012-01-05.

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Номер патента: US20120004021A1. Автор: Shai-Hee Michael A.. Владелец: Aristocrat Technologies Australia Pty Limited. Дата публикации: 2012-01-05.

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Номер патента: US20120001248A1. Автор: Sandhu Gurtej S.,Ramaswamy D.V. Nirmal. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2012-01-05.

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Номер патента: US20120001255A1. Автор: PARK JIN WON. Владелец: HYNIX SEMICONDUCTOR INC.. Дата публикации: 2012-01-05.

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Номер патента: US20120001246A1. Автор: . Владелец: Micron Technology Inc.. Дата публикации: 2012-01-05.

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Номер патента: AU2018398377B2. Автор: Francis Gadrat,Stephane Chollet,Sylvain Picot,Patricia Forest-Villegas. Владелец: I Sep SAS. Дата публикации: 2024-09-26.

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Номер патента: SG10202100590QA. Автор: YOUN Jaeyoun,CHOI JIHYUN,KWON Youngcheon,RYU Jemin,LEE Haesuk. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-08-30.

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Номер патента: US20120002481A1. Автор: . Владелец: HYNIX SEMICONDUCTOR INC.. Дата публикации: 2012-01-05.

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Номер патента: JP2923643B2. Автор: 仁 三輪,博昭 小谷. Владелец: HITACHI LTD. Дата публикации: 1999-07-26.

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Номер патента: US20120009770A1. Автор: Woo Won Sic. Владелец: HYNIX SEMICONDUCTOR INC.. Дата публикации: 2012-01-12.

Power supply method of Vpp active detector of semiconductor memory device

Номер патента: KR980011468A. Автор: 김병철,서동일. Владелец: 김광호. Дата публикации: 1998-04-30.

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Номер патента: US20120051168A1. Автор: SONG Choung-Ki. Владелец: . Дата публикации: 2012-03-01.

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Номер патента: US20120072698A1. Автор: . Владелец: . Дата публикации: 2012-03-22.

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Номер патента: RU2348980C2. Автор: Евгений Юрьевич Андрианов. Владелец: Евгений Юрьевич Андрианов. Дата публикации: 2009-03-10.

Method of fabricating capacitor in the semiconductor memory device

Номер патента: KR100250683B1. Автор: 임찬. Владелец: 현대전자산업주식회사. Дата публикации: 2000-04-01.

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Номер патента: KR940007389B1. Автор: 김경훈,박문규,강성훈. Владелец: 김광호. Дата публикации: 1994-08-16.

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Номер патента: US20120127797A1. Автор: . Владелец: MACRONIX INTERNATIONAL CO., LTD.. Дата публикации: 2012-05-24.

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Номер патента: TW200839954A. Автор: Dirk Caspary,Stefano Parascandola. Владелец: Qimonda AG. Дата публикации: 2008-10-01.

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Номер патента: US20120014188A1. Автор: . Владелец: . Дата публикации: 2012-01-19.

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Номер патента: US20120230123A1. Автор: OR-BACH Zvi,Widjaja Yuniarto. Владелец: . Дата публикации: 2012-09-13.

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Номер патента: TW200943534A. Автор: Chih-Shan Chen,Wen-Fu Yu,Chien-Hua Tsai. Владелец: Promos Technologies Inc. Дата публикации: 2009-10-16.

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