Россия, г. Королев.

eburdiyg@gmail.com

8 (903) 781-84-63

包括測試焊墊的半導體積體電路

Номер патента: TWI631574B
Опубликовано: 01-08-2018
Автор(ы): 李東郁
Принадлежит: 愛思開海力士有限公司
Получить PDF файл: Открыть в новом окне

Вам могут быть интересны следующие патенты

Рисунок 1. Взаимосвязь патентов (ближайшие 20).

Semiconductor integtrated circuit including test pads

Номер патента: US9279855B2. Автор: Dong Uk Lee. Владелец: SK hynix Inc. Дата публикации: 2016-03-08.

Semiconductor integrated circuit device including test pads

Номер патента: US20180294043A1. Автор: Kwi Dong Kim. Владелец: SK hynix Inc. Дата публикации: 2018-10-11.

Memory system tester using test pad real time monitoring

Номер патента: US20200411129A1. Автор: Andrea Pozzato,Mauro Luigi Sali,Andrea Vigilante,Gianluca Scalisi,Andrea Salvioni. Владелец: Micron Technology Inc. Дата публикации: 2020-12-31.

Memory system tester using test pad real time monitoring

Номер патента: US11763908B2. Автор: Andrea Pozzato,Mauro Luigi Sali,Andrea Vigilante,Gianluca Scalisi,Andrea Salvioni. Владелец: Micron Technology Inc. Дата публикации: 2023-09-19.

Latch circuit including a data retention latch

Номер патента: WO2006075122A3. Автор: David Walter Flynn,David William Howard. Владелец: Advanced Risc Mach Ltd. Дата публикации: 2007-04-05.

Latch circuit including a data retention latch

Номер патента: EP1836768A2. Автор: David Walter Flynn,David William Howard. Владелец: Advanced Risc Machines Ltd. Дата публикации: 2007-09-26.

Latch circuit including a data retention latch

Номер патента: MY136254A. Автор: David Walter Flynn,David William Howard. Владелец: Advanced Risc Mach Ltd. Дата публикации: 2008-09-30.

Latch circuit including a data retention latch

Номер патента: WO2006075122A2. Автор: David Walter Flynn,David William Howard. Владелец: ARM LIMITED. Дата публикации: 2006-07-20.

Internal Voltage Generation Circuit and Method of Semiconductor Device Using Test Pad

Номер патента: KR100365736B1. Автор: 김영희,오진근. Владелец: 주식회사 하이닉스반도체. Дата публикации: 2003-04-18.

Memory device including test pad connection circuit

Номер патента: US20240145023A1. Автор: Sangyong Yoon,KeeHo JUNG,Chang-Wook Seo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-05-02.

Integrated circuit including test circuit and method of manufacturing the same

Номер патента: US20230049110A1. Автор: Changho HAN,Mijeong Lim,Yuncheol Kim,Kwanghun Oh. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-02-16.

Integrated circuit including test circuit and method of manufacturing the same

Номер патента: US12000888B2. Автор: Changho HAN,Mijeong Lim,Yuncheol Kim,Kwanghun Oh. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-06-04.

Built-in self-test circuit and temperature measurement circuit including the same

Номер патента: US20230280398A1. Автор: Kwangho Kim,Sangho Kim,Yongjin Lee,Michael Choi,Junhee Shin,Jooseong Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-09-07.

Built-in self-test circuit and temperature measurement circuit including the same

Номер патента: US11686766B2. Автор: Kwangho Kim,Sangho Kim,Yongjin Lee,Michael Choi,Junhee Shin,Jooseong Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-06-27.

Flip-flops and scan chain circuits including the same

Номер патента: US12044733B2. Автор: Minji Kim,Byounggon Kang,Dalhee Lee,Giyoung Yang,Taejung Seol,Jaebeom Yang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-23.

Embedded logic analyzer and integrated circuit including the same

Номер патента: US20170045582A1. Автор: Joon-Won Ko. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-02-16.

Embedded logic analyzer and integrated circuit including the same

Номер патента: US11719747B2. Автор: Joon-Won Ko. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-08-08.

An integrated circuit including a programmable logic analyzer with enhanced analyzing and debugging capabilities and a method therefor

Номер патента: CA2807125C. Автор: James Ray Bailey. Владелец: Lexmark International Inc. Дата публикации: 2018-02-27.

Sequential circuit, scan chain circuit including the same and integrated circuit including the same

Номер патента: US10422832B2. Автор: Taiki Uemura. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-09-24.

Flip-flops and scan chain circuits including the same

Номер патента: US20240061039A1. Автор: Minji Kim,Byounggon Kang,Dalhee Lee,Giyoung Yang,Taejung Seol,Jaebeom Yang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-02-22.

Built-in self-test circuits and semiconductor integrated circuits including the same

Номер патента: US11867757B2. Автор: Jinwoo Park,Michael Choi,Sungno Lee,Younghyo PARK,Eunhye OH,Heejune Lee,Youngjae CHO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-01-09.

Built-in self-test circuits and semiconductor integrated circuits including the same

Номер патента: US20220187366A1. Автор: Jinwoo Park,Michael Choi,Sungno Lee,Younghyo PARK,Eunhye OH,Heejune Lee,Youngjae CHO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-06-16.

Scan chain circuit and integrated circuit including the same

Номер патента: US20160003901A1. Автор: Chan-Ho Lee,In-Gyu Park,Dong-Wook Seo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-01-07.

Semiconductor chip including chip pad, redistribution wiring test pad, and redistribution wiring connection pad

Номер патента: US11705376B2. Автор: Chan-Ho Lee,Hyun-Soo Chung,Myeong-Soon Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-07-18.

Semiconductor chip including chip pad, redistribution wiring test pad, and redistribution wiring connection pad

Номер патента: US11189535B2. Автор: Chan-Ho Lee,Hyun-Soo Chung,Myeong-Soon Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-11-30.

Semiconductor chip including chip pad, redistribution wiring test pad, and redistribution wiring connection pad

Номер патента: US20220059417A1. Автор: Chan-Ho Lee,Hyun-Soo Chung,Myeong-Soon Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-02-24.

Semiconductor chip including chip pad, redistribution wiring test pad, and redistribution wiring connection pad

Номер патента: US20200266114A1. Автор: Chan-Ho Lee,Hyun-Soo Chung,Myeong-Soon Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-08-20.

Semiconductor chip including chip pad, redistribution wiring test pad, and redistribution wiring connection pad

Номер патента: US20170011976A1. Автор: Chan-Ho Lee,Hyun-Soo Chung,Myeong-Soon Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-01-12.

Integrated circuit including dedicated and programmable logic

Номер патента: EP1219031A1. Автор: David D. Eaton,Ket-Chong Yap,Kevin K. Yee,E. Thomas Hart,Andrew K. Chan,Neal A. Palmer,Michael W Dini,James Apland,Panawalge S. N. Gunaratna. Владелец: QuickLogic Corp. Дата публикации: 2002-07-03.

Integrated circuit including dedicated and programmable logic

Номер патента: WO2001017112A1. Автор: David D. Eaton,Ket-Chong Yap,Kevin K. Yee,E. Thomas Hart,Andrew K. Chan,Neal A. Palmer,Michael W Dini,James Apland,Panawalge S. N. Gunaratna. Владелец: Quicklogic Corporation. Дата публикации: 2001-03-08.

Semiconductor integrated circuit including a plurality of macros that can be operated although their operational voltages are different from each other

Номер патента: US6577543B2. Автор: Isao Naritake. Владелец: NEC Corp. Дата публикации: 2003-06-10.

Semiconductor integrated circuit including a plurality of macros that can be operated although their operational voltages are different from each other

Номер патента: US20020008555A1. Автор: Isao Naritake. Владелец: NEC Corp. Дата публикации: 2002-01-24.

Merged memory and logic (MML) integrated circuits including independent memory bank signals and methods

Номер патента: US6067255A. Автор: Seong-Ook Jung,Min-hwa Jang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2000-05-23.

Setting circuit and integrated circuit including the same

Номер патента: US8427883B2. Автор: Chang-Hyun Lee,Dae-Suk Kim. Владелец: Hynix Semiconductor Inc. Дата публикации: 2013-04-23.

Repair circuit including repair controller

Номер патента: US20110029143A1. Автор: Duck Hwa Hong. Владелец: Hynix Semiconductor Inc. Дата публикации: 2011-02-03.

Memory interface circuit including output impedance monitor and method of calibrating output impedance thereof

Номер патента: US20210184677A1. Автор: Min-hyung Cho,Seong Min Kim,Young-Deuk Jeon. Владелец: Electronics and Telecommunications Research Institute ETRI. Дата публикации: 2021-06-17.

Memory address protection circuit including an error detection circuit and method of operating same

Номер патента: US12135608B2. Автор: Shih-Lien Linus Lu,Saman M. I. Adham,Ramin SHARIAT-YAZDI. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-11-05.

Semiconductor integrated circuit including at least one master chip and at least one slave chip

Номер патента: US09773535B2. Автор: Young-Ju Kim,Dong-Uk Lee,Keun-Soo Song. Владелец: SK hynix Inc. Дата публикации: 2017-09-26.

Semiconductor chip, semiconductor integrated circuit including the semiconductor chip, semiconductor system including the semiconductor integrated circuit and method of driving the semiconductor system

Номер патента: US9177625B2. Автор: Jae-Bum Ko. Владелец: SK hynix Inc. Дата публикации: 2015-11-03.

Integrated circuit including memory having limited read

Номер патента: EP2278590A3. Автор: Franz Kreupl,Thomas Happ,Jan Boris Philipp,Peter Schrögmeier,Luca De Ambroggi,Gernot Steinlesberger,Cristian Pho-Duc. Владелец: Qimonda AG. Дата публикации: 2011-03-02.

Latch circuit, flip-flop circuit including the same

Номер патента: US20220345118A1. Автор: Dal Hee LEE,Byoung Gon KANG,Woo Kyu KIM,Tae Jun YOO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-10-27.

Latch circuit, flip-flop circuit including the same

Номер патента: US20210328582A1. Автор: Dal Hee LEE,Byoung Gon KANG,Woo Kyu KIM,Tae Jun YOO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-10-21.

Skew control circuit and interface circuit including the same

Номер патента: US20190005994A1. Автор: Jae-Heung Kim. Владелец: SK hynix Inc. Дата публикации: 2019-01-03.

Method of programming one-time programmable (OTP) memory device and method of testing semiconductor integrated circuit including the same

Номер патента: US09754678B2. Автор: Do-Hoon Byun,Chang-Su Sim,Na-Rae Hong. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-09-05.

Transmitter circuit including selection circuit, and method of operating the selection circuit

Номер патента: US11804838B2. Автор: Hyunyoon Cho,Youngdon CHOI,Junghwan Choi,Joohwan Kim,Junyoung Park,Eunseok SHIN,Jindo BYUN. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-10-31.

Emi shielding circuit and semiconductor integrated circuit including the same

Номер патента: US20130127509A1. Автор: Jun Ho Lee. Владелец: Hynix Semiconductor Inc. Дата публикации: 2013-05-23.

EMI shielding circuit and semiconductor integrated circuit including the same

Номер патента: US8570062B2. Автор: Jun Ho Lee. Владелец: SK hynix Inc. Дата публикации: 2013-10-29.

Memory array circuits including word line circuits for improved word line signal timing and related methods

Номер патента: WO2022250866A1. Автор: Chiaming Chai,Jason Philip Martzloff,Shaoping Ge. Владелец: Microsoft Technology Licensing, LLC. Дата публикации: 2022-12-01.

Memory array circuits including word line circuits for improved word line signal timing and related methods

Номер патента: US20220383918A1. Автор: Chiaming Chai,Jason Philip Martzloff,Shaoping Ge. Владелец: Microsoft Technology Licensing LLC. Дата публикации: 2022-12-01.

Memory array circuits including word line circuits for improved word line signal timing and related methods

Номер патента: EP4348647A1. Автор: Chiaming Chai,Jason Philip Martzloff,Shaoping Ge. Владелец: Microsoft Technology Licensing LLC. Дата публикации: 2024-04-10.

Latch circuit, flip-flop circuit including the same

Номер патента: US11996846B2. Автор: Dal Hee LEE,Byoung Gon KANG,Woo Kyu KIM,Tae Jun YOO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-05-28.

Interface circuit including variable impedance circuit and operating method thereof

Номер патента: US20220286095A1. Автор: Jiyeon Park,Kihwan SEONG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-09-08.

Structure and methodology for determining test pad integrity

Номер патента: US20200124638A1. Автор: Reinaldo Vega,Pablo Nieves,Kushagra Sinha. Владелец: International Business Machines Corp. Дата публикации: 2020-04-23.

Test circuit including tap controller selectively outputting test signal based on mode and shift signals

Номер патента: US20100174958A1. Автор: Yoshiyuki Nakamura,Toshiyuki Maeda. Владелец: NEC Electronics Corp. Дата публикации: 2010-07-08.

Scan chain circuit and integrated circuit including the same

Номер патента: US09897655B2. Автор: Chan-Ho Lee,In-Gyu Park,Dong-Wook Seo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-02-20.

Semiconductor device with test pads and pad connection unit

Номер патента: US8198627B2. Автор: Woo-Seop Jeong. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2012-06-12.

Reconfigurable circuit including row address replacement circuit for replacing defective address

Номер патента: US09646686B2. Автор: Kosuke Tatsumura,Koichiro ZAITSU. Владелец: Toshiba Corp. Дата публикации: 2017-05-09.

Integrated circuit including cell array with write assist cell

Номер патента: US11636894B2. Автор: Taemin CHOI,Seongook JUNG,Keonhee Cho,Heekyung Choi. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-04-25.

Integrated circuit including cell array with write assist cell

Номер патента: US20220148644A1. Автор: Taemin CHOI,Seongook JUNG,Keonhee Cho,Heekyung Choi. Владелец: Industry Academic Cooperation Foundation of Yonsei University. Дата публикации: 2022-05-12.

Memory circuit including pre-charging unit, sensing unit, and sink unit and method for operating same

Номер патента: US09589610B1. Автор: Chung-Kuang Chen. Владелец: Macronix International Co Ltd. Дата публикации: 2017-03-07.

Integrated circuit including built-in self test circuit to test memory and memory test method

Номер патента: US7876633B2. Автор: Yoshitaka Aoki,Yasuyuki Hirasaki,Katsumi Shinbo. Владелец: Renesas Electronics Corp. Дата публикации: 2011-01-25.

Integrated circuit including Built-In Self Test circuit to test memory and memory test method

Номер патента: US20090238018A1. Автор: Yoshitaka Aoki,Yasuyuki Hirasaki,Katsumi Shinbo. Владелец: NEC Electronics Corp. Дата публикации: 2009-09-24.

Anti-fuse circuit and semiconductor integrated circuit including the same

Номер патента: US20120008448A1. Автор: Hong-Jung Kim,Jin-Hee Cho. Владелец: Hynix Semiconductor Inc. Дата публикации: 2012-01-12.

Disguising test pads in a semiconductor package

Номер патента: US20110156035A1. Автор: Arie Frenklakh. Владелец: SanDisk Technologies LLC. Дата публикации: 2011-06-30.

Integrated circuit including backside wiring and method of designing the same

Номер патента: US20240312493A1. Автор: Taehyung Kim,Youngrok Park,Hoyoung Tang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-09-19.

Integrated circuits including backside wiring

Номер патента: US20240363531A1. Автор: Soyeon Kim,Taehyung Kim,Hoyoung Tang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-10-31.

Non-volatile memory circuit including voltage divider with phase change memory devices

Номер патента: EP2377128A1. Автор: John C. Costello,Peter J. McElheny,Richard G. Smolen. Владелец: Altera Corp. Дата публикации: 2011-10-19.

Nonvolatile memory sensing circuit including variable current source

Номер патента: US20220068341A1. Автор: Thinh Tran,Ebrahim Abedifard. Владелец: Avalanche Technology Inc. Дата публикации: 2022-03-03.

Integrated circuit including logic circuitry

Номер патента: US20210312116A1. Автор: Juergen Pille,Tobias Werner,Rolf Sautter,Shankar Kalyanasundaram. Владелец: International Business Machines Corp. Дата публикации: 2021-10-07.

Non-volatile memory circuit including voltage divider with phase change memory devices

Номер патента: WO2010083087A1. Автор: John C. Costello,Peter J. McElheny,Richard G. Smolen. Владелец: Altera Corporation. Дата публикации: 2010-07-22.

Group iii nitride-based monolithic microwave integrated circuits including static random access memory blocks with associated addressing and buffering circuits

Номер патента: US20230361059A1. Автор: Jeremy Fisher. Владелец: Wolfspeed Inc. Дата публикации: 2023-11-09.

Integrated circuit including read only memory (rom) cell

Номер патента: US20240349497A1. Автор: Taehyung Kim,Suk Youn,Hoyoung Tang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-10-17.

Pre-charge control circuit and voltage generation circuit including the same

Номер патента: US20240355376A1. Автор: Ji Young Lee,Jung Yeop Lee,Dong Wook Jang,Keun Seon AHN,Bon Kwang Koo,Eun Ji CHOI,Soon Sung AN,Gwan Woo KIM,Sun Ki CHO,In Seok Kong,Sung Hwa Ok,Jae Hyeong Hong,Heon Ki KIM,Jun Seo Jang,Beom Kyu SEO. Владелец: SK hynix Inc. Дата публикации: 2024-10-24.

Integrated circuit including read only memory (rom) cell

Номер патента: EP4451332A2. Автор: Taehyung Kim,Suk Youn,Hoyoung Tang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-10-23.

Apparatuses, methods, and circuits including a delay circuit

Номер патента: US09584140B2. Автор: Yantao Ma,Tyler Gomm. Владелец: Micron Technology Inc. Дата публикации: 2017-02-28.

Integrated circuit including cell array and backside power rail

Номер патента: US20240172407A1. Автор: Taehyung Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-05-23.

Integrated circuit including an array of memory cells and method

Номер патента: US20100027325A1. Автор: Lothar Risch,Peter Baars,Thomas Happ,Stefan Tegen,Klaus Muemmler,Ulrike Gruening-Von Schwerin. Владелец: Qimonda AG. Дата публикации: 2010-02-04.

Security circuit including dual encoder and endecryptor including the security circuit

Номер патента: US20210264061A1. Автор: Hyunil Kim,Jonghoon Shin,Jisu Kang,Jaehyeok Kim,Hyesoo LEE,Hongmook Choi. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-08-26.

Data holding circuit including latch circuit and storing circuit having MTJ elements and data recovery method

Номер патента: US09558801B2. Автор: Akio Yamamoto,Hirotaka Takeno. Владелец: Socionext Inc. Дата публикации: 2017-01-31.

Memory circuit including write control unit wherein subthreshold leakage may be reduced

Номер патента: US5796650A. Автор: Thomas R. Wik,Shahryar Aryani. Владелец: LSI Logic Corp. Дата публикации: 1998-08-18.

Integrated circuits including magnetic random access memory structures having reduced switching energy barriers for dual bit operation and methods for fabricating the same

Номер патента: US20190259809A1. Автор: Jaiswal Akhilesh,Ajey Poovannummoottil Jacob. Владелец: Globalfoundries Inc. Дата публикации: 2019-08-22.

Low power voltage detector circuit including a flash memory cell

Номер патента: US5495453A. Автор: Mase J. Taub,Kenneth E. Wojciechowski. Владелец: Intel Corp. Дата публикации: 1996-02-27.

Integrated circuit including three-dimensional memory device

Номер патента: US11856786B2. Автор: Yih Wang,Yu-Ming Lin,Sai-Hooi Yeong,Yi-Ching Liu,Bo-Feng YOUNG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-12-26.

Physical unclonable functions based on a circuit including resistive memory elements

Номер патента: US20230267998A1. Автор: Pirooz Parvarandeh,Periyapatna G. Venkatesh. Владелец: GlobalFoundries US Inc. Дата публикации: 2023-08-24.

Memory bit cell circuit including a bit line coupled to a static random-access memory (SRAM) bit cell circuit and a non-volatile memory (NVM) bit cell circuit and a memory bit cell array circuit

Номер патента: US11749327B2. Автор: Khaja Ahmad SHAIK,Bharani Chava. Владелец: Qualcomm Inc. Дата публикации: 2023-09-05.

Physical unclonable functions based on a circuit including resistive memory elements

Номер патента: US11984160B2. Автор: Pirooz Parvarandeh,Periyapatna G. Venkatesh. Владелец: GlobalFoundries US Inc. Дата публикации: 2024-05-14.

Integrated circuit including three-dimensional memory device

Номер патента: US20240090231A1. Автор: Yih Wang,Yu-Ming Lin,Sai-Hooi Yeong,Yi-Ching Liu,Bo-Feng YOUNG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-03-14.

Memory bit cell circuit including a bit line coupled to a static random-access memory (sram) bit cell circuit and a non-volatile memory (nvm) bit cell circuit and a memory bit cell array circuit

Номер патента: US20220180910A1. Автор: Khaja Ahmad SHAIK,Bharani Chava. Владелец: Qualcomm Inc. Дата публикации: 2022-06-09.

Memory bit cell circuit including a bit line coupled to a static random-access memory (sram) bit cell circuit and a non-volatile memory (nvm) bit cell circuit and a memory bit cell array circuit

Номер патента: WO2022125172A1. Автор: Khaja Ahmad SHAIK,Bharani Chava. Владелец: QUALCOMM INCORPORATED. Дата публикации: 2022-06-16.

Integrated circuit including cell array with word line assist cells

Номер патента: US20220139442A1. Автор: Taemin CHOI,Seongook JUNG,Keonhee Cho. Владелец: Industry Academic Cooperation Foundation of Yonsei University. Дата публикации: 2022-05-05.

Memory bit cell circuit including a bit line coupled to a static random-access memory (sram) bit cell circuit and a non-volatile memory (nvm) bit cell circuit and a memory bit cell array circuit

Номер патента: EP4260320A1. Автор: Khaja Ahmad SHAIK,Bharani Chava. Владелец: Qualcomm Inc. Дата публикации: 2023-10-18.

Integrated circuit including memory cell and method of designing the same

Номер патента: US20220037339A1. Автор: Seunghan Park,Seunghun LEE,Hyejin Lee,Inhak LEE,Sangyeop BAECK. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-02-03.

Integrated circuit including vertical capacitors

Номер патента: EP3791428A1. Автор: Douglas T. Grider,Patrick R. Smith,Xiang-Zheng Bo. Владелец: Texas Instruments Inc. Дата публикации: 2021-03-17.

Neuromorphic circuit including spike regulator based on flash memory

Номер патента: US20220156565A1. Автор: Inho Kim,Jaewook KIM,Suyoun Lee,Kyeong Seok Lee,Joon Young Kwak,Gyuweon Hwang,Jong-Keuk Park,Jongkil Park,YeonJoo JEONG. Владелец: Korea Advanced Institute of Science and Technology KAIST. Дата публикации: 2022-05-19.

Integrated circuits including multi-layer conducting lines

Номер патента: US20210202373A1. Автор: Chan-Ho Lee,Tae-hyung Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-07-01.

Integrated circuits including first and second power supply nodes for writing and reading memory cells

Номер патента: US20240286401A1. Автор: James Michael Gardner,Scott A. Linn. Владелец: Hewlett Packard Development Co LP. Дата публикации: 2024-08-29.

Integrated circuits including high-voltage high-power and high-voltage low-power supply nodes

Номер патента: US20240286402A1. Автор: James Michael Gardner,Rogelio Cicili,Eric Thomas Martin. Владелец: Hewlett Packard Development Co LP. Дата публикации: 2024-08-29.

Voltage generation circuit and integrated circuit including the same

Номер патента: US09996098B2. Автор: Chang-Hyun Lee,Jae-Boum Park,Kyeong-tae Kim,Saeng-Hwan Kim. Владелец: SK hynix Inc. Дата публикации: 2018-06-12.

Stage circuit including a controller, drivers, and output units and scan driver using the same

Номер патента: US09830856B2. Автор: Chong-Chul Chai,Jong-Hee Kim,Oh-Kyong Kwon,Yeong-keun Kwon,Ji-Sun Kim,Jae-Keun LIM. Владелец: Samsung Display Co Ltd. Дата публикации: 2017-11-28.

Voltage generation circuit and integrated circuit including the same

Номер патента: US09712154B1. Автор: Jung-Ung Kim. Владелец: SK hynix Inc. Дата публикации: 2017-07-18.

Integrated circuit including cell array and backside power rail

Номер патента: EP4372797A1. Автор: Taehyung Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-05-22.

Interconnect wiring switches and integrated circuits including the same

Номер патента: US20140225165A1. Автор: Ramachandran Muralidhar,Daniel C. Edelstein,Stephen M. Gates,Kailash Gopalakrishnan. Владелец: International Business Machines Corp. Дата публикации: 2014-08-14.

Scanning drive circuit including n shift registers each having independent output terminals, driving method, display panel, and display apparatus

Номер патента: US11521539B2. Автор: Yue Li,Mengmeng ZHANG. Владелец: Shanghai Tianma AM OLED Co Ltd. Дата публикации: 2022-12-06.

GOA circuit including a reverse circuit and a potential holding circuit and display panel

Номер патента: US11322108B2. Автор: Jian Tao. Владелец: Wuhan China Star Optoelectronies Technology Co Ltd. Дата публикации: 2022-05-03.

Integrated circuit including programmable circuit

Номер патента: CA2010122A1. Автор: Makoto Sakamoto. Владелец: Kawasaki Steel Corp. Дата публикации: 1990-12-21.

Transmission gate circuit, inverter circuit and gate driving circuit including the same

Номер патента: US20240054959A1. Автор: Kyungho Kim,Gichang Lee,Keechan PARK,Donghee Shin,Sunkwun SON,Yikyoung You,Sangyong NO,Nokyung Park. Владелец: University Industry Cooperation Corporation of Konkuk University. Дата публикации: 2024-02-15.

Voltage generation circuit and semiconductor circuit including the voltage generation circuit

Номер патента: US11264097B2. Автор: Chan Hui Jeong. Владелец: SK hynix Inc. Дата публикации: 2022-03-01.

Integrated circuit including a memory element programmed using a seed pulse

Номер патента: US20090310401A1. Автор: Thomas Happ,Jan Boris Philipp,Bernhard Ruf,Christian Ruster. Владелец: Qimonda AG. Дата публикации: 2009-12-17.

Flip-flop circuit including latch circuits

Номер патента: US7397286B2. Автор: Hideaki Miyamoto. Владелец: Sanyo Electric Co Ltd. Дата публикации: 2008-07-08.

Integrated circuit including efuse cell

Номер патента: US20220052058A1. Автор: Meng-Sheng CHANG,Yao-Jen Yang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-02-17.

Integrated circuit including integrated standard cell structure

Номер патента: US20230343788A1. Автор: Jin Young Lim,Hyeon Gyu YOU,Gi Young Yang,Ga Room KIM,In Gyum KIM,Hak Chul JUNG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-10-26.

Method and apparatus to implement an integrated circuit including both dynamic random-access memory (dram) and static random-access memory (sram)

Номер патента: US20230315331A1. Автор: Rajabali Koduri,Pushkar Ranade,Wilfred Gomes,Abhishek Anil Sharma. Владелец: Intel Corp. Дата публикации: 2023-10-05.

One-time programable cell circuit, semiconductor integrated circuit including the same, and data judging method thereof

Номер патента: US20110080764A1. Автор: Hiroyuki Furukawa,Isao Naritake. Владелец: Renesas Electronics Corp. Дата публикации: 2011-04-07.

One-time programable cell circuit, semiconductor integrated circuit including the same, and data judging method thereof

Номер патента: US20130176765A1. Автор: Hiroyuki Furukawa,Isao Naritake. Владелец: Renesas Electronics Corp. Дата публикации: 2013-07-11.

Electronic circuit including charge pump for converting voltage

Номер патента: US20200144910A1. Автор: Bilal Ahmad Janjua,Sungwhan SEO,Vivek Venkata Kalluru. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-05-07.

Shift register circuit including denoising control sub-circuit and method for driving same, and gate driving circuit and display apparatus

Номер патента: US12002407B2. Автор: Jie Zhang,Dawei Wang,Guangliang Shang,Shiming Shi,Jiangnan Lu,Libin LIU. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2024-06-04.

Integrated circuits including first and second power supply nodes for writing and reading memory cells

Номер патента: EP4366952A1. Автор: James Michael Gardner,Scott A. Linn. Владелец: Hewlett Packard Development Co LP. Дата публикации: 2024-05-15.

Noise removing circuit, operation method thereof, and integrated circuit including the same

Номер патента: US20220163574A1. Автор: Joo Hyung CHAE. Владелец: SK hynix Inc. Дата публикации: 2022-05-26.

Substrate including test circuit and substrate test apparatus including the substrate

Номер патента: US20240194542A1. Автор: Junghyun Park,Heeju Seo,Yongil KWAK,Jekook LYU. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-06-13.

Offset test pads for WLCSP final test

Номер патента: US10396001B2. Автор: Bard M. Pedersen. Владелец: Adesto Technologies Corp. Дата публикации: 2019-08-27.

Method of manufacturing semiconductor device having a test pad

Номер патента: US6008061A. Автор: Kunihiro Kasai. Владелец: Toshiba Corp. Дата публикации: 1999-12-28.

Test pad on device lead for test contactor

Номер патента: US20240203801A1. Автор: John Carlo Molina,Julian Carlo Barbadillo,Ray Fredric De Asis. Владелец: Texas Instruments Inc. Дата публикации: 2024-06-20.

Test pads coupled with leads unconnected with die pads

Номер патента: US7956357B2. Автор: Lee D. Whetsel,Richard L. Antley. Владелец: Texas Instruments Inc. Дата публикации: 2011-06-07.

Test pads on leads unconnected with die pads

Номер патента: US7569853B2. Автор: Lee D. Whetsel,Richard L. Antley. Владелец: Texas Instruments Inc. Дата публикации: 2009-08-04.

Test circuitry coupling test pad to functional core input pad

Номер патента: US10281522B2. Автор: Lee D. Whetsel,Richard L. Antley. Владелец: Texas Instruments Inc. Дата публикации: 2019-05-07.

Semiconductor integrated circuit device including variable frequency type probe test pad and semiconductor system

Номер патента: US20160252572A1. Автор: Seung Geun Baek. Владелец: SK hynix Inc. Дата публикации: 2016-09-01.

Die testing using top surface test pads

Номер патента: US20150097186A1. Автор: Lee D. Whetsel,Richard L. Antley. Владелец: Texas Instruments Inc. Дата публикации: 2015-04-09.

Die testing using top surface test pads

Номер патента: US20090261326A1. Автор: Lee D. Whetsel,Richard L. Antley. Владелец: Texas Instruments Inc. Дата публикации: 2009-10-22.

Die testing using top surface test pads

Номер патента: US20160079132A1. Автор: Lee D. Whetsel,Richard L. Antley. Владелец: Texas Instruments Inc. Дата публикации: 2016-03-17.

Die testing using top surface test pads

Номер патента: US20200278389A1. Автор: Lee D. Whetsel,Richard L. Antley. Владелец: Texas Instruments Inc. Дата публикации: 2020-09-03.

Die testing using top surface test pads

Номер патента: US20020119650A1. Автор: Lee Whetsel,Richard Antley. Владелец: Texas Instruments Inc. Дата публикации: 2002-08-29.

Die testing using top surface test pads

Номер патента: US20110204915A1. Автор: Lee D. Whetsel,Richard L. Antley. Владелец: Texas Instruments Inc. Дата публикации: 2011-08-25.

Die testing using top surface test pads

Номер патента: US20060205099A1. Автор: Lee Whetsel,Richard Antley. Владелец: Texas Instruments Inc. Дата публикации: 2006-09-14.

Die testing using top surface test pads

Номер патента: US20140225112A1. Автор: Lee D. Whetsel,Richard L. Antley. Владелец: Texas Instruments Inc. Дата публикации: 2014-08-14.

Die testing using top surface test pads

Номер патента: US20130248864A1. Автор: Lee D. Whetsel,Richard L. Antley. Владелец: Texas Instruments Inc. Дата публикации: 2013-09-26.

Die testing using top surface test pads

Номер патента: US20080157803A1. Автор: Lee D. Whetsel,Richard L. Antley. Владелец: Texas Instruments Inc. Дата публикации: 2008-07-03.

Die testing using top surface test pads

Номер патента: US20120182033A1. Автор: Lee D. Whetsel,Richard L. Antley. Владелец: Texas Instruments Inc. Дата публикации: 2012-07-19.

Die testing using top surface test pads

Номер патента: US20180106858A1. Автор: Lee D. Whetsel,Richard L. Antley. Владелец: Texas Instruments Inc. Дата публикации: 2018-04-19.

Die testing using top surface test pads

Номер патента: US9472478B2. Автор: Lee D. Whetsel,Richard L. Antley. Владелец: Texas Instruments Inc. Дата публикации: 2016-10-18.

Test pad and method for determining positions of probes

Номер патента: US10379157B2. Автор: Wei-Da Yang,Eddy Liu,Xiao-Feng Hou,Guo-Dong Liang. Владелец: Futaihua Industry Shenzhen Co Ltd. Дата публикации: 2019-08-13.

Apparatuses including test segment circuits and methods for testing the same

Номер патента: US20180364303A1. Автор: Bin Liu,Nathaniel J. Meier,Kevin G. Werhane. Владелец: Micron Technology Inc. Дата публикации: 2018-12-20.

Test pad and method for determining positions of probes

Номер патента: US20180275191A1. Автор: Wei-Da Yang,Eddy Liu,Xiao-Feng Hou,Guo-Dong Liang. Владелец: Futaihua Industry Shenzhen Co Ltd. Дата публикации: 2018-09-27.

Integrated circuit including parametric analog elements

Номер патента: US09858367B1. Автор: Antonio Visconti,David LeHoty. Владелец: Cypress Semiconductor Corp. Дата публикации: 2018-01-02.

Display driving circuit including crack detector and display device including the display driving circuit

Номер патента: US11735079B2. Автор: Siwoo Kim,Jinhong Hwang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-08-22.

Integrated circuit including sensor structure, related method and design structure

Номер патента: US20140021469A1. Автор: Jeffrey P. Gambino,Edward C. Cooney, III,Zhong-Xiang He,Tom C. Lee. Владелец: International Business Machines Corp. Дата публикации: 2014-01-23.

Display driving circuit including crack detector and display device including the display driving circuit

Номер патента: US20210272488A1. Автор: Siwoo Kim,Jinhong Hwang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-09-02.

Transient voltage suppression protection circuit including built in testing

Номер патента: US20140306714A1. Автор: Gary L. Hess,James Quigley, Jr.. Владелец: Hamilton Sundstrand Corp. Дата публикации: 2014-10-16.

Circuit including structural testing means with no dedicated test pad for testing

Номер патента: US5889787A. Автор: Xavier Cauchy. Владелец: SGS Thomson Microelectronics SA. Дата публикации: 1999-03-30.

MICROPROCESSOR INCLUDING TEST MODE INPUTS

Номер патента: FR2817417B1. Автор: Ludovic Ruat,Franck Roche,Pascal Narche. Владелец: STMICROELECTRONICS SA. Дата публикации: 2003-01-24.

Semiconductor package including test pad

Номер патента: US11887900B2. Автор: Tae Hun Kim,Ji Hoon Kim,Ji Hwan HWANG,Ji Seok HONG,Hyuek Jae Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-01-30.

Semiconductor package including test pad

Номер патента: US20210335680A1. Автор: Tae Hun Kim,Ji Hoon Kim,Ji Hwan HWANG,Ji Seok HONG,Hyuek Jae Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-10-28.

Film type semiconductor package including test pad with common output channel and method thereof, test device and semiconductor device including pattern with common test channel and method thereof

Номер патента: KR100734290B1. Автор: 허남중. Владелец: 삼성전자주식회사. Дата публикации: 2007-07-02.

Test pad structure, a pad structure for inspecting a semiconductor chip and a wiring substrate for a tape packaging having the same

Номер патента: US09869717B2. Автор: Sang-Heui LEE,So-young LIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-01-16.

Signal transmission lines with test pad

Номер патента: US20130154680A1. Автор: Yu-Hsu Lin. Владелец: Hon Hai Precision Industry Co Ltd. Дата публикации: 2013-06-20.

Structure and methodology for high intensity test probe alignment to device test pads

Номер патента: US20200124663A1. Автор: Reinaldo Vega,Pablo Nieves,Kushagra Sinha. Владелец: International Business Machines Corp. Дата публикации: 2020-04-23.

Method for Forming a Test Pad and Method for Performing Array Test Using the Test Pad

Номер патента: US20160341789A1. Автор: Peng Du,Yutong HU. Владелец: Shenzhen China Star Optoelectronics Technology Co Ltd. Дата публикации: 2016-11-24.

Integrated circuit wafer having plural dies with each die including test circuit receiving expected data and mask data from different pads

Номер патента: US9562946B2. Автор: Lee D. Whetsel,Alan Hales. Владелец: Texas Instruments Inc. Дата публикации: 2017-02-07.

Package substrate with testing pads on fine pitch traces

Номер патента: EP2962535A2. Автор: Chin-Kwan Kim,Omar James Bchir,Kuiwon Kang. Владелец: Qualcomm Inc. Дата публикации: 2016-01-06.

Package substrate with testing pads on fine pitch traces

Номер патента: WO2014134059A2. Автор: Chin-Kwan Kim,Kuiwon Kang,Omar J. Bchir. Владелец: QUALCOMM INCORPORATED. Дата публикации: 2014-09-04.

Semiconductor packages having test pads

Номер патента: US20240145317A1. Автор: Jongmin Lee,Joongwon Shin,Yeonjin Lee,Jimin CHOI,Nara Lee,Sungyun WOO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-05-02.

Semiconductor packages having test pads

Номер патента: EP4365608A1. Автор: Jongmin Lee,Joongwon Shin,Yeonjin Lee,Jimin CHOI,Nara Lee,Sungyun WOO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-05-08.

Test pads for integrated circuit chips

Номер патента: US4751458A. Автор: John P. Elward, Jr.. Владелец: AMERICAN TELEPHONE AND TELEGRAPH COMPANY AT&T BELL LABORATORIES. Дата публикации: 1988-06-14.

Method for forming a test pad and method for performing array test using the test pad

Номер патента: US9658284B2. Автор: Peng Du,Yutong HU. Владелец: Shenzhen China Star Optoelectronics Technology Co Ltd. Дата публикации: 2017-05-23.

Test circuit of electronic device, electronic device including test circuit, and operating method thereof

Номер патента: US20230384369A1. Автор: Ki Hyuk SUNG. Владелец: SK hynix Inc. Дата публикации: 2023-11-30.

Integrated circuit including constant-0 flip flops reconfigured to provide observable and controllable test points

Номер патента: US20240248136A1. Автор: Paul Policke,Shwetha SHIVASHANKAR MURTHY. Владелец: Qualcomm Inc. Дата публикации: 2024-07-25.

TEST PAD AND CHIP ON FILM PACKAGE INCLUDING THE SAME

Номер патента: US20230011967A1. Автор: Young Min Choi,Seung Hoon JIN. Владелец: LX Semicon Co Ltd. Дата публикации: 2023-01-12.

Method for testing a photonic integrated circuit including a device under test

Номер патента: US09453723B1. Автор: Jean-François Carpentier,Patrick Lemaitre. Владелец: STMicroelectronics Crolles 2 SAS. Дата публикации: 2016-09-27.

Scan flip-flop, flip-flop and scan test circuit including the same

Номер патента: US20210152162A1. Автор: RAHEEL Azmat,Jaeseok Yang,Taehyung Kim,Jinwoo Jeong,Jaehyoung Lim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-05-20.

Systems for probing superconducting circuits including the use of a non-magnetic cryogenic heater

Номер патента: US20210011082A1. Автор: Miriam E. Marizan,Edward M. Kurek. Владелец: Microsoft Technology Licensing LLC. Дата публикации: 2021-01-14.

Current detection circuit including non-linear circuit and power supply circuit containing the same

Номер патента: US12051964B2. Автор: Ryuji Yamada,Ryuunosuke Araumi. Владелец: Fuji Electric Co Ltd. Дата публикации: 2024-07-30.

Resistance device and current detection circuit including the resistance device

Номер патента: US20220189668A1. Автор: Kaoru Sakaguchi. Владелец: Ablic Inc. Дата публикации: 2022-06-16.

Resistance device and current detection circuit including the resistance device

Номер патента: US11948708B2. Автор: Kaoru Sakaguchi. Владелец: Ablic Inc. Дата публикации: 2024-04-02.

Power management circuit including on-board current sensing across inductor and on-die current limit detection circuit

Номер патента: US11829172B2. Автор: Vijayakumar Ashok DIBBAD,Matthew Severson,Fredrick Bontemps,Timothy Zoley. Владелец: Qualcomm Inc. Дата публикации: 2023-11-28.

Power management circuit including on-board current sensing across inductor and on-die current limit detection circuit

Номер патента: WO2023164362A1. Автор: Vijayakumar Ashok DIBBAD,Matthew Severson,Fredrick Bontemps,Timothy Zoley. Владелец: QUALCOMM INCORPORATED. Дата публикации: 2023-08-31.

Systems for probing superconducting circuits including the use of a non-magnetic cryogenic heater

Номер патента: US11137443B2. Автор: Miriam E. Marizan,Edward M. Kurek. Владелец: Microsoft Technology Licensing LLC. Дата публикации: 2021-10-05.

Power on/off reset circuit and reset signal generating circuit including the same

Номер патента: US20180337672A1. Автор: Jin-woo Kim,Yong-joo SONG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-11-22.

Integrated circuit including sensor having injection molded magnetic material

Номер патента: US09812636B2. Автор: Udo Ausserlechner. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2017-11-07.

Digital circuit including fail-safe circuit

Номер патента: US5065047A. Автор: Masahiro Ishikawa,Mitsuo Kaneko,Yuichi Igari. Владелец: Nissan Motor Co Ltd. Дата публикации: 1991-11-12.

Comparator circuit including feedback circuit

Номер патента: US20230370084A1. Автор: Hyochang Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-11-16.

Comparator circuit including feedback circuit

Номер патента: US11955986B2. Автор: Hyochang Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-04-09.

Semiconductor device having subthreshold operating circuits including a back body bias potential based on temperature range

Номер патента: US09939330B2. Автор: Darryl G. Walker. Владелец: Individual. Дата публикации: 2018-04-10.

Memory device including test control circuit

Номер патента: US20210174889A1. Автор: Hosung Cho,Yucheon JU. Владелец: SK hynix Inc. Дата публикации: 2021-06-10.

Method for testing magnetic recording medium and method for production of magnetic recording medium including testing step

Номер патента: WO2008059941A1. Автор: Koji Tsukada,Yohei Sakano. Владелец: SHOWA DENKO K.K.. Дата публикации: 2008-05-22.

Method for testing magnetic recording medium and method for production of magnetic recording medium including testing step

Номер патента: US20100118678A1. Автор: Koji Tsukada,Yoshikazu Tsukada,Yohei Sakano. Владелец: Showa Denko KK. Дата публикации: 2010-05-13.

Method for testing magnetic recording medium and method for production of magnetic recording medium including testing step

Номер патента: TW200842374A. Автор: Koji Tsukada,Yohei Sakano. Владелец: Showa Denko KK. Дата публикации: 2008-11-01.

Test pad and system

Номер патента: US11874269B2. Автор: Bonnie Goodman,Jeff Goodman. Владелец: Individual. Дата публикации: 2024-01-16.

Test Pad and System

Номер патента: US20200386737A1. Автор: Bonnie Goodman,Jeff Goodman. Владелец: Individual. Дата публикации: 2020-12-10.

Quantifying color changes in chemical test pads induced by different concentrations of analytes under different lighting conditions

Номер патента: US11802839B2. Автор: Martin Zizi,Walter De Brouwer,Bernard Burg,Anthony Smart,Aaron Alexander Rowe. Владелец: HealthyIo Ltd. Дата публикации: 2023-10-31.

Quantifying color changes in chemical test pads induced by different concentrations of analytes under different lighting conditions

Номер патента: US20240011912A1. Автор: Martin Zizi,Walter De Brouwer,Bernard Burg,Anthony Smart,Aaron Alexander Rowe. Владелец: HealthyIo Ltd. Дата публикации: 2024-01-11.

Bolometer pixel readout integrated circuit including trigger sense circuit

Номер патента: EP3983766A1. Автор: Jeffrey Mitchell,Ryan Boesch,Matthew C. Thomas. Владелец: Raytheon Co. Дата публикации: 2022-04-20.

Bolometer pixel readout integrated circuit including trigger sense circuit

Номер патента: WO2020252102A1. Автор: Jeffrey Mitchell,Ryan Boesch,Matthew C. Thomas. Владелец: Raytheon Company. Дата публикации: 2020-12-17.

Metering circuit including a time-varying reference and method

Номер патента: US09945690B2. Автор: Kenneth A Berringer. Владелец: Silicon Laboratories Inc. Дата публикации: 2018-04-17.

Integrated circuit including a directional light sensor

Номер патента: US09419043B2. Автор: Roel Daamen,Erik Jan Lous,Nebojsa NENADOVIC. Владелец: NXP BV. Дата публикации: 2016-08-16.

Oscillator circuit including oscillator

Номер патента: US20200309525A1. Автор: Ronald Joseph Lipka. Владелец: Panasonic Intellectual Property Management Co Ltd. Дата публикации: 2020-10-01.

Ripple circuit including hall effect sensor

Номер патента: US12074544B2. Автор: Francois Breynaert,Guillaume Landicheff. Владелец: Inteva Products LLC. Дата публикации: 2024-08-27.

Pixel circuit including an open-loop amplifier with well controlled gain for event-based vision sensor and method of controlling thereof

Номер патента: US11885673B2. Автор: Christian Bouvier,Daniel Matolin,Denis BOURKE. Владелец: Prophesee SA. Дата публикации: 2024-01-30.

Pixel circuit including compensation unit, driving method thereof and detector

Номер патента: US09681074B2. Автор: Li Zhou,FENG Jiang,Chung-Chun Lee,Long Wang,Liye Duan,Chieh Hsing CHUNG. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2017-06-13.

Ripple circuit including hall effect sensor

Номер патента: US20220416705A1. Автор: Francois Breynaert,Guillaume Landicheff. Владелец: Inteva Products LLC. Дата публикации: 2022-12-29.

Integrated circuit including magneto-resistive structures

Номер патента: US20090058402A1. Автор: Jürgen Zimmer,Klemens Prügl. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2009-03-05.

Resolver circuit including BTL amplifier

Номер патента: US20050200367A1. Автор: Boris Khaykin,David Mulligan. Владелец: Visteon Global Technologies Inc. Дата публикации: 2005-09-15.

Method for manufacturing tested apparatus and method for manufacturing system including tested apparatus

Номер патента: US09502314B2. Автор: Toru Ishikawa,Tetsuji Takahashi,Kazuya Takakura. Владелец: Micron Technology Inc. Дата публикации: 2016-11-22.

SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE INCLUDING TEST PADS

Номер патента: US20180294043A1. Автор: KIM Kwi Dong. Владелец: SK HYNIX INC.. Дата публикации: 2018-10-11.

Memory device and memory system including test control signal generating circuit

Номер патента: US20210295940A1. Автор: Dong Uk Lee. Владелец: SK hynix Inc. Дата публикации: 2021-09-23.

SEMICONDUCTOR CHIP INCLUDING CHIP PAD, REDISTRIBUTION WIRING TEST PAD, AND REDISTRIBUTION WIRING CONNECTION PAD

Номер патента: US20220059417A1. Автор: Lee Chan-Ho,Chung Hyun-Soo,PARK MYEONG-SOON. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2022-02-24.

SEMICONDUCTOR CHIP INCLUDING CHIP PAD, REDISTRIBUTION WIRING TEST PAD, AND REDISTRIBUTION WIRING CONNECTION PAD

Номер патента: US20200266114A1. Автор: Lee Chan-Ho,Chung Hyun-Soo,PARK MYEONG-SOON. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2020-08-20.

MEMORY DEVICE AND MEMORY SYSTEM INCLUDING TEST CONTROL SIGNAL GENERATING CIRCUIT

Номер патента: US20210295940A1. Автор: LEE Dong Uk. Владелец: . Дата публикации: 2021-09-23.

Semiconductor memory device including test mode circuit

Номер патента: KR100891304B1. Автор: 차재훈. Владелец: 주식회사 하이닉스반도체. Дата публикации: 2009-04-06.

Semiconductor memory device including test mode circuit

Номер патента: US8214171B2. Автор: Jae Hoon Cha. Владелец: Hynix Semiconductor Inc. Дата публикации: 2012-07-03.

SEMICONDUCTOR INTEGTRATED CIRCUIT INCLUDING TEST PADS

Номер патента: US20150067430A1. Автор: LEE Dong Uk. Владелец: SK HYNIX INC.. Дата публикации: 2015-03-05.

SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE INCLUDING VARIABLE FREQUENCY TYPE PROBE TEST PAD AND SEMICONDUCTOR SYSTEM

Номер патента: US20160252572A1. Автор: BAEK Seung Geun. Владелец: . Дата публикации: 2016-09-01.

OTP MEMORY INCLUDING TEST CELL ARRAY AND METHOD OF TESTING THE SAME

Номер патента: US20170053716A1. Автор: Kim Tae-Seong. Владелец: . Дата публикации: 2017-02-23.

Semiconductor integrated circuit including semiconductor memory apparatus including a plurality of banks

Номер патента: US09530474B2. Автор: Hee Jin Byun. Владелец: SK hynix Inc. Дата публикации: 2016-12-27.

Interface circuit including buffer circuit for high speed communication, semiconductor apparatus and system including the same

Номер патента: US09590625B2. Автор: Kyu Dong HWANG. Владелец: SK hynix Inc. Дата публикации: 2017-03-07.

Memory device of adaptively calibrating timing margin and integrated circuit including the same

Номер патента: US09870043B2. Автор: Jong-Pil Lee,Jae-Seung Choi,Jung-Hun Heo,Su-Hyun YUN. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-01-16.

Differential driving circuit including asymmetry compensation circuit

Номер патента: US09614505B1. Автор: Min-hyung Cho,Young-Deuk Jeon,Chun-Gi LYUH,Yi-Gyeong KIM. Владелец: Electronics and Telecommunications Research Institute ETRI. Дата публикации: 2017-04-04.

Latch circuit, transmission circuit including latch circuit, and semiconductor apparatus including transmission circuit

Номер патента: US11908543B2. Автор: Kwan Su SHON,Yo Han JEONG,Keun Seon AHN,Eun Ji CHOI. Владелец: SK hynix Inc. Дата публикации: 2024-02-20.

Accumulator, operational logic circuit including accumulator, and processing-in-memory device including accumulator

Номер патента: US11948658B2. Автор: Joon Hong Park. Владелец: SK hynix Inc. Дата публикации: 2024-04-02.

Accumulator, operational logic circuit including accumulator, and processing-in-memory device including accumulator

Номер патента: US20230206967A1. Автор: Joon Hong Park. Владелец: SK hynix Inc. Дата публикации: 2023-06-29.

Buffer circuit, receiver circuit including the buffer circuit, and semiconductor apparatus including the receiver circuit

Номер патента: US11799481B2. Автор: Yo Han JEONG,Jin Ha Hwang,Eun Ji CHOI. Владелец: SK hynix Inc. Дата публикации: 2023-10-24.

Test system, load test equipment including test system

Номер патента: JP6961284B2. Автор: 豊嗣 近藤. Владелец: Tatsumi Corp. Дата публикации: 2021-11-05.

Testing system, load testing apparatus including testing system

Номер патента: TW202117348A. Автор: 近藤豊嗣. Владелец: 日商辰巳菱機股份有限公司. Дата публикации: 2021-05-01.

Output control scan flip-flop, semiconductor integrated circuit including the same, and design method for semiconductor integrated circuit

Номер патента: US8892971B2. Автор: Hayato Kimura. Владелец: Renesas Electronics Corp. Дата публикации: 2014-11-18.

Device including test circuit

Номер патента: US9588172B2. Автор: Yoshiyuki Kurokawa. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2017-03-07.

Memory system including test circuit

Номер патента: US09959937B2. Автор: Tetsuya Iwata,Shinya Takeda,Mikio Takasugi,Yoshio Furuyama,Shunsuke KODERA,Toshihiko KITAZUME,Kenichirou KADA,Nobuhiro Tsuji,Hirosuke NARAI. Владелец: Toshiba Memory Corp. Дата публикации: 2018-05-01.

MEMORY SYSTEM TESTER USING TEST PAD REAL TIME MONITORING

Номер патента: US20220101938A1. Автор: Vigilante Andrea,Scalisi Gianluca,Pozzato Andrea,Salvioni Andrea,Sali Mauro Luigi. Владелец: . Дата публикации: 2022-03-31.

MEMORY SYSTEM TESTER USING TEST PAD REAL TIME MONITORING

Номер патента: US20200411129A1. Автор: Vigilante Andrea,Scalisi Gianluca,Pozzato Andrea,Salvioni Andrea,Sali Mauro Luigi. Владелец: . Дата публикации: 2020-12-31.

Non-volatile memory device with a program driver circuit including a voltage limiter

Номер патента: US20210366554A1. Автор: Vikas RANA,Laura Capecchi,Marcella CARISSIMI,Fabio Enrico Carlo Disegni,Cesare Torti. Владелец: STMicroelectronics International NV Switzerland. Дата публикации: 2021-11-25.

Semiconductor integrated circuit including semiconductor memory

Номер патента: US20110176347A1. Автор: Toshiki Hisada,Hiromitsu Mashita. Владелец: Individual. Дата публикации: 2011-07-21.

Memory circuit including a current switch and a sense amplifier

Номер патента: US09761283B2. Автор: Filippo Marinelli,Lubomir Plavec. Владелец: EM Microelectronic Marin SA. Дата публикации: 2017-09-12.

MEMORY SYSTEM INCLUDING TEST CIRCUIT

Номер патента: US20170062077A1. Автор: Takeda Shinya,KODERA Shunsuke,KITAZUME Toshihiko,KADA Kenichirou,TSUJI Nobuhiro,IWATA Tetsuya,FURUYAMA Yoshio,NARAI Hirosuke,TAKASUGI Mikio. Владелец: . Дата публикации: 2017-03-02.

Test pad structure for reuse of interconnect level masks

Номер патента: US20110233543A1. Автор: Gerald Matusiewicz. Владелец: International Business Machines Corp. Дата публикации: 2011-09-29.

Test pad structure for reuse of interconnect level masks

Номер патента: US20140234757A1. Автор: Gerald Matusiewicz. Владелец: International Business Machines Corp. Дата публикации: 2014-08-21.

Test pad structure for reuse of interconnect level masks

Номер патента: US09348216B2. Автор: Gerald Matusiewicz. Владелец: Globalfoundries Inc. Дата публикации: 2016-05-24.

Test pad structure for reuse of interconnect level masks

Номер патента: US8766257B2. Автор: Gerald Matusiewicz. Владелец: International Business Machines Corp. Дата публикации: 2014-07-01.

Test pad structure for reuse of interconnect level masks

Номер патента: US20130001552A1. Автор: Gerald Matusiewicz. Владелец: International Business Machines Corp. Дата публикации: 2013-01-03.

Display device and test pad thereof

Номер патента: US09570365B2. Автор: Hung-Kun Chen,Yu-Ti HUANG,Hong-Kang CHANG. Владелец: Innolux Corp. Дата публикации: 2017-02-14.

Semiconductor Laser with Test Pads

Номер патента: US20130064500A1. Автор: Scott E. Olson. Владелец: SEAGATE TECHNOLOGY LLC. Дата публикации: 2013-03-14.

Memory chip test pad access management to facilitate data security

Номер патента: WO2024040506A1. Автор: QI Dong. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2024-02-29.

Memory chip test pad access management to facilitate data security

Номер патента: US20240069753A1. Автор: QI Dong. Владелец: Micron Technology Inc. Дата публикации: 2024-02-29.

Firmware state apparatus for controlling sequencing of processing including test operation in multiple data lines of communication

Номер патента: US4965721A. Автор: Thomas O. Holtey,Scott W. Smith,Wayne A. Perzan,Thomas L. Murray, Jr.. Владелец: Bull HN Information Systems Inc. Дата публикации: 1990-10-23.

Analog to digital conversion circuit including a digital decimation filtering circuit

Номер патента: US20220216878A1. Автор: Gerald Dale Morrison,Grant Howard McGibney,Daniel Keith Van Ostrand,Patrick Troy Gray. Владелец: Sigmasense LLC. Дата публикации: 2022-07-07.

Integrated circuits including a MIMCAP device and methods of forming the same for long and controllable reliability lifetime

Номер патента: US09583557B2. Автор: Lili Cheng,Robert Fox,Jeasung Park,Dina H. Triyoso,David Paul Brunco,Sanford Chu. Владелец: Globalfoundries Inc. Дата публикации: 2017-02-28.

Integrated circuit including standard cells, a method of designing a layout including the same, and a computing system therefor

Номер патента: US20230083727A1. Автор: Min Su Kim,Jong Woo Kim,Eun-Hee CHOI,Seung Man LIM,Sang Jin CHEONG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-03-16.

Integrated circuits including abutted blocks and methods of designing layouts of the integrated circuits

Номер патента: US20230297752A1. Автор: Minjae Jeong,Jungho DO,Sanghoon Baek,Jisu YU,Hyeongyu You. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-09-21.

Source driving integrated circuits including an electrostatic discharge circuit and related layout method

Номер патента: US09735053B2. Автор: Young-Jin Cho,Hong-Yeon Kim,Youn-Ho Hwang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-08-15.

Integrated circuit including parametric analog elements

Номер патента: US09697312B2. Автор: Antonio Visconti,David A Lehoty. Владелец: Cypress Semiconductor Corp. Дата публикации: 2017-07-04.

Power supply voltage monitoring circuit, and electronic circuit including the power supply voltage monitoring circuit

Номер патента: US09454174B2. Автор: Atsushi Igarashi,Nao OTSUKA. Владелец: Ablic Inc. Дата публикации: 2016-09-27.

Operating method of floating point operation circuit and integrated circuit including floating point operation circuit

Номер патента: US20230004349A1. Автор: Joong Baik Kim,Yongmin JUNG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-01-05.

Apparatus and method for manufacturing integrated circuit including clock network

Номер патента: US20190332934A1. Автор: In Hak HAN. Владелец: BAUM Co Ltd. Дата публикации: 2019-10-31.

Operating method of floating point operation circuit and integrated circuit including floating point operation circuit

Номер патента: EP4113277A1. Автор: Joong Baik Kim,Yongmin JUNG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-01-04.

Data driver and display driving circuit including the same

Номер патента: US20200357338A1. Автор: HaJun LEE,Jeongah Ahn,JiYong Jeong. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-11-12.

Image sensor driving circuit including power switch and image sensor including the same

Номер патента: US11423851B2. Автор: Kyuik CHO,Jaejung Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-08-23.

Image sensor driving circuit including power switch and image sensor including the same

Номер патента: US20210201835A1. Автор: Kyuik CHO,Jaejung Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-07-01.

Power management integrated circuit including detection circuit with capacitive element

Номер патента: US20210382508A1. Автор: Hyunseok Nam,Sangyoung Lee,Jeongwoon KONG,Junhyun Bae. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-12-09.

An integrated circuit including a programmable logic analyzer with enhanced analyzing and debugging capabilities and a method therefor

Номер патента: WO2011022480A1. Автор: James Alan Ward,James Ray Bailey. Владелец: Lexmark International, Inc.. Дата публикации: 2011-02-24.

Integrated circuit including standard cell and method of fabricating the integrated circuit

Номер патента: US20230015367A1. Автор: Sidharth Rastogi,RAHEEL Azmat,Jae-Seok Yang,Chul-Hong Park,Kwan-Young Chun. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-01-19.

Integrated circuit including standard cell and method of fabricating the integrated circuit

Номер патента: US20200057830A1. Автор: Sidharth Rastogi,RAHEEL Azmat,Jae-Seok Yang,Chul-Hong Park,Kwan-Young Chun. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-02-20.

Bandgap reference circuit including vertically stacked active SOI devices

Номер патента: US11309435B2. Автор: Timothy S. Miller,Peter P. Hang,Van Ton-That,Don Raymond Blackwell. Владелец: GlobalFoundries US Inc. Дата публикации: 2022-04-19.

Integrated circuit including power gating cell

Номер патента: US20200328746A1. Автор: Jongwoo Kim,Minsu Kim,Chanhee Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-10-15.

Front-end circuit performing analog-to-digital conversion and touch processing circuit including the same

Номер патента: US20200373936A1. Автор: Minsung Kim,Jungmoon Kim,Sanho Byun. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-11-26.

Method for adjusting resonance frequency of resonance circuit included in electronic pen, electronic pen, and method for manufacturing electronic pen

Номер патента: US12111989B2. Автор: Shigeru Yamashita,Masamitsu Ito,Toshihiko Horie. Владелец: Wacom Co Ltd. Дата публикации: 2024-10-08.

Integrated circuit including multiple height cell

Номер патента: US12136626B2. Автор: Jung-Ho Do,Ji-Su Yu,Seung-Young Lee,Jae-Boong Lee,Hyeon-gyu You. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-11-05.

Current reference circuit and semiconductor integrated circuit including the same

Номер патента: US09996100B2. Автор: Ho-Young Shin. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-06-12.

Integrated circuit including multiple transmitters and near field communication system including the circuit

Номер патента: US09985693B2. Автор: II Jong Song,Sang Hyo Lee,Byeong Taek MOON. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-05-29.

Differential circuit including a current mirror

Номер патента: US09952616B2. Автор: Tadashi Akaho. Владелец: ROHM CO LTD. Дата публикации: 2018-04-24.

Control circuit including load switch, electronic apparatus including the load switch, and control method thereof

Номер патента: US09791916B2. Автор: Jin-Hyung Lee,Gil-Yong Chang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-10-17.

Buffer circuit having amplifier offset compensation and source driving circuit including the same

Номер патента: US09577619B2. Автор: Yang-hyo KIM,Ji-Woon Jung,Won-Sik Kang,Jong-Kon Bae,Hyung-Tae Kim,Jae-Hyuck Woo,In-Suk Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-02-21.

Voltage supply circuit included in terminal equipment

Номер патента: US09521485B2. Автор: Ahn Kook LEE. Владелец: Wisol Co Ltd. Дата публикации: 2016-12-13.

Display panel including extension portion, pixel circuit including voltage stabilizing sub-circuits and display apparatus

Номер патента: US11915645B2. Автор: Lu Yang,Pei Wang,Wentao Wang,Dawei Shi,Dongsheng ZHAO. Владелец: Chongqing BOE Display Technology Co Ltd. Дата публикации: 2024-02-27.

Pixel circuit including optical fingerprint sensing circuit, method for driving pixel circuit, and organic light emitting display device

Номер патента: US11769450B2. Автор: MoonBong Song,Byong Deok Choi,Yong Duck Kim,Jeongmin Moon,KiSeok CHANG,Jihwan JUNG,SoonShin JUNG,Yong Sang Yoo. Владелец: Industry University Cooperation Foundation IUCF HYU. Дата публикации: 2023-09-26.

Driving circuit including a first and second driving mode and method of operating the same

Номер патента: US11875738B2. Автор: Jihoon Kim,Yongsoo Lee,Kyunghoon Chung,Minje Hyun. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-01-16.

Integrated circuit including standard cells overlapping each other and method of generating layout of the integrated circuit

Номер патента: US11042686B2. Автор: Jong-Hoon Jung,Tae-Joong Song,Jung-Ho Do,Ji-Su Yu,Seung-Young Lee,Jae-Boong Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-06-22.

Integrated circuit including at least four linear-shaped conductive structures having extending portions of different length

Номер патента: US8952425B2. Автор: Michael C. Smayling,Scott T. Becker. Владелец: Tela Innovations Inc. Дата публикации: 2015-02-10.

Behavioral synthesis of circuits including high impedance buffers

Номер патента: US5299137A. Автор: Christopher H. Kingsley. Владелец: VLSI Technology Inc. Дата публикации: 1994-03-29.

Water heater control circuit including an empty tank sensor

Номер патента: US5437002A. Автор: Steven B. BENNETT. Владелец: Paragon Electric Co Inc. Дата публикации: 1995-07-25.

Source Driving Integrated Circuits Including an Electrostatic Discharge Circuit and Related Layout Method

Номер патента: US20140301001A1. Автор: Young-Jin Cho,Hong-Yeon Kim,Youn-Ho Hwang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2014-10-09.

Integrated circuit including multi-height cells and method of designing the same

Номер патента: US20230378156A1. Автор: Minjae Jeong,Jungho DO,Jaehee Cho,Jisu YU,Geonwoo Nam,Hyeongyu You. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-11-23.

Clock integrated circuit including heterogeneous oscillators and apparatus including the clock integrated circuit

Номер патента: US11811364B2. Автор: Jaehoon Lee,Seunghyun Oh,Jaehong Jung,Seungjin Kim,Joomyoung Kim,Jinhyeon LEE,Gihyeok HA,Yelim YOUN. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-11-07.

Input sensing circuit including a pressure sensing part and a display device including the same

Номер патента: US11740750B2. Автор: Minsoo Kim. Владелец: Samsung Display Co Ltd. Дата публикации: 2023-08-29.

Touch sensing circuit including adjustable filter and touch sensing method thereof

Номер патента: US11797128B2. Автор: Jae Hwan Lee,Hyun Soo Chung,Kyu Tae Lee,Mun Seok Kang,Jeong Kwon NAM,Jin Yoon JANG,Hee Ra YUN. Владелец: LX Semicon Co Ltd. Дата публикации: 2023-10-24.

Spike neural network circuit including self-correcting control circuit and method of operation thereof

Номер патента: US20220253673A1. Автор: Kwang Il Oh. Владелец: Electronics and Telecommunications Research Institute ETRI. Дата публикации: 2022-08-11.

Switching circuit, DC-DC converter and display driver integrated circuit including the same

Номер патента: US20100091002A1. Автор: Hyo Jin Kim,Jong-Hyun Kim,Si Woo Kim,Jae Sung Kang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2010-04-15.

Method of making in an integrated circuit including simplifying metal shapes

Номер патента: US20110113400A1. Автор: Olivier Rizzo,Hanno Melzner,Jacques Herry. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2011-05-12.

Standard cell library, Integrated circuit including synchronous circuit, and computing system for designing the integrated circuit

Номер патента: US20190057179A1. Автор: Bong-Hyun Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-02-21.

Compressor circuit and semiconductor integrated circuit including the same

Номер патента: US20240094987A1. Автор: Byoung Gon KANG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-03-21.

Integrated circuits including standard cells and method of manufacturing the integrated circuits

Номер патента: US20200402969A1. Автор: Jung-Ho Do. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-12-24.

Clock integrated circuit including heterogeneous oscillators and apparatus including the clock integrated circuit

Номер патента: EP4113839A1. Автор: Jaehoon Lee,Seunghyun Oh,Seungjin Kim,Joomyoung Kim,Jinhyeon LEE,Gihyeok HA,Yelim YOUN,Jaehong Jaehong JUNG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-01-04.

Clock integrated circuit including heterogeneous oscillators and apparatus including the clock integrated circuit

Номер патента: US20240030870A1. Автор: Jaehoon Lee,Seunghyun Oh,Jaehong Jung,Seungjin Kim,Joomyoung Kim,Gihyeok HA,Yelim YOUN,Jihnyeon Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-01-25.

Methods for fabricating integrated circuits including generating photomasks for directed self-assembly

Номер патента: US20150242555A1. Автор: Yi Zou,Azat Latypov,Tamer Coskun,Wei-Long Wang. Владелец: Globalfoundries Inc. Дата публикации: 2015-08-27.

Bandgap reference circuit including resistivity temperature coefficient cancellation circuit, and oscillator circuit including the bandgap reference circuit

Номер патента: US11789482B2. Автор: Taeik Kim,Chanyoung Jeong,Wooseok Kim,Jusung LEE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-10-17.

Integrated circuit including switch cell area

Номер патента: US20240234294A1. Автор: Jungho DO,Jisu YU,Sungyup JUNG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-11.

Clock generation circuit and voltage generation circuit including the clock generation circuit

Номер патента: US20240235560A1. Автор: Hyun Chul Lee. Владелец: SK hynix Inc. Дата публикации: 2024-07-11.

Negative voltage regulation circuit and voltage generation circuit including the same

Номер патента: US20140167839A1. Автор: Jae-Kwan Kwon. Владелец: SK hynix Inc. Дата публикации: 2014-06-19.

Integrated circuit including standard cells and method of designing the same

Номер патента: US20240243117A1. Автор: Hayoung Kim,Kibum Kim,Eunhee Choi,Yongeun CHO,Hyunjeong ROH,Seonkyeong KIM,Moogyu Bae. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-18.

Integrated circuit including switch cell area

Номер патента: EP4401134A1. Автор: Jungho DO,Jisu YU,Sungyup JUNG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-17.

Vertical stacking of multiple integrated circuits including soi-based optical components

Номер патента: WO2006084237A9. Автор: Vipulkumar Patel,Kalpendu Shastri,John Fangman,Dave Piede. Владелец: Dave Piede. Дата публикации: 2006-11-09.

Integrated circuit including standard cells and method of designing the same

Номер патента: EP4407682A1. Автор: Hayoung Kim,Kibum Kim,Eunhee Choi,Yongeun CHO,Hyunjeong ROH,Seonkyeong KIM,Moogyu Bae. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-31.

Integrated circuit including non-planar structure and waveguide

Номер патента: US20140205233A1. Автор: Thomas Schulz. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2014-07-24.

Integrated circuit including asymmetric power line and method of designing the same

Номер патента: US11755809B2. Автор: Sanghoon Baek,Jonghoon Jung,Jaewoo SEO,Jisu YU,Hyeongyu You. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-09-12.

Control Circuit Including a Controller and an Enable Module, Signal Conversion Circuit Coupled to the Controller, and Control Method

Номер патента: US20240310100A1. Автор: Yao Wang,Hanjie Yin. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2024-09-19.

Semiconductor circuit including a tie-low circuit and method of fabricating same

Номер патента: US12119340B2. Автор: Wei Li,Kai Zhou,Yongliang JIN,Yaqi Ma,CunCun CHEN. Владелец: TSMC China Co Ltd. Дата публикации: 2024-10-15.

Load driver circuit including load model parameter estimation

Номер патента: US09859739B2. Автор: Thomas Nirmaier,Manuel Harrant,Jerome Kirscher,Georg Pelz. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2018-01-02.

Column data driving circuit including a precharge unit, display device with the same, and driving method thereof

Номер патента: US09653034B2. Автор: HEE-JUNG KIM,Ki-Seok Cho,Dae-Ho Lim. Владелец: MagnaChip Semiconductor Ltd. Дата публикации: 2017-05-16.

Buffer circuit having an enhanced slew-rate and source driving circuit including the same

Номер патента: US09543912B2. Автор: Sung-Ho Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-01-10.

Power circuit including inrush current limiter, and integrated circuit including the power circuit

Номер патента: US6150800A. Автор: Shiro Sakiyama,Masayoshi Kinoshita,Hiroo Yamamoto,Katsuji Satomi,Jun Kajiwara,Katsuhiro Ootani. Владелец: Matsushita Electric Industrial Co Ltd. Дата публикации: 2000-11-21.

Bandgap reference based power-on detect circuit including a supression circuit

Номер патента: US5852376A. Автор: William F. Kraus. Владелец: Ramtron International Corp. Дата публикации: 1998-12-22.

Bandgap reference based power-on detect circuit including a suppression circuit

Номер патента: US5867047A. Автор: William F. Kraus. Владелец: Ramtron International Corp. Дата публикации: 1999-02-02.

Method and computing system for manufacturing integrated circuit including nanosheet

Номер патента: US20210165946A1. Автор: Kwanyoung Chun,Jinwoo Jeong,Jungkyu CHAE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-06-03.

Source driver and display driving circuit including the same

Номер патента: US20200105207A1. Автор: Hyun Ho Cho,Hae Won Lee,Jung Bae YUN,Ju Young SHIN. Владелец: Silicon Works Co Ltd. Дата публикации: 2020-04-02.

Integrated circuit including standard cell and method of fabricating the integrated circuit

Номер патента: US11868691B2. Автор: Sidharth Rastogi,RAHEEL Azmat,Jae-Seok Yang,Chul-Hong Park,Kwan-Young Chun. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-01-09.

Methods for fabricating integrated circuits including generating photomasks for directed self-assembly

Номер патента: US20150012897A1. Автор: Yi Zou,Azat Latypov,Vito Dai. Владелец: Globalfoundries Inc. Дата публикации: 2015-01-08.

Front-end circuit performing analog-to-digital conversion and touch processing circuit including the same

Номер патента: US11777514B2. Автор: Minsung Kim,Jungmoon Kim,Sanho Byun. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-10-03.

Front-end circuit performing analog-to-digital conversion and touch processing circuit including the same

Номер патента: EP3742267A1. Автор: Minsung Kim,Jungmoon Kim,Sanho Byun. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-11-25.

Spike neural network circuit including comparator operated by conditional bias current

Номер патента: US11861483B2. Автор: Jae-Jin Lee,Sung Eun Kim,Kwang Il Oh,In Gi Lim,Seong Mo Park,Young Hwan Bae. Владелец: Electronics and Telecommunications Research Institute ETRI. Дата публикации: 2024-01-02.

Spike neural network circuit including input spike detecting circuit and operating method thereof

Номер патента: US20230385618A1. Автор: Jae-Jin Lee,Kwang Il Oh,Dongwon Lee,Byung-Do Yang. Владелец: Electronics and Telecommunications Research Institute ETRI. Дата публикации: 2023-11-30.

Integrated circuit including standard cells and method of designing the same

Номер патента: US20240105710A1. Автор: Minjae Jeong,Jungho DO,Jaehee Cho,Jisu YU,Geonwoo Nam,Hyeongyu You. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-03-28.

Pixel driving circuit including control unit to measure voltage difference between opposite ends of sampling resistor, and display panel including the same

Номер патента: US11735096B2. Автор: Lei Gao. Владелец: Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd. Дата публикации: 2023-08-22.

Clock transfer circuit including a semiconductor device for compensating delay fluctuation

Номер патента: US11936386B2. Автор: Deog-Kyoon Jeong,Yongjae Lee,Jiheon Park,Soyeong SHIN. Владелец: SK hynix Inc. Дата публикации: 2024-03-19.

Spike neural network circuit including radiation source

Номер патента: US20190311244A1. Автор: Jae-Jin Lee,Sung Eun Kim,Kwang Il Oh,Tae Wook Kang,Seong Mo Park,Byounggun Choi. Владелец: Electronics and Telecommunications Research Institute ETRI. Дата публикации: 2019-10-10.

Method for adjusting resonance frequency of resonance circuit included in electronic pen, electronic pen, and method for manufacturing electronic pen

Номер патента: US11762487B2. Автор: Shigeru Yamashita,Masamitsu Ito,Toshihiko Horie. Владелец: Wacom Co Ltd. Дата публикации: 2023-09-19.

Method for adjusting resonance frequency of resonance circuit included in electronic pen, electronic pen, and method for manufacturing electronic pen

Номер патента: US20230376133A1. Автор: Shigeru Yamashita,Masamitsu Ito,Toshihiko Horie. Владелец: Wacom Co Ltd. Дата публикации: 2023-11-23.

Spike neural network circuit including probabilistic operator

Номер патента: US20230259745A1. Автор: Hyuk Kim,Jae-Jin Lee,Kwang Il Oh,Tae Wook Kang,In San Jeon. Владелец: Electronics and Telecommunications Research Institute ETRI. Дата публикации: 2023-08-17.

Clock transfer circuit including a semiconductor device for compensating delay fluctuation

Номер патента: US20230246637A1. Автор: Deog-Kyoon Jeong,Yongjae Lee,Jiheon Park,Soyeong SHIN. Владелец: SK hynix Inc. Дата публикации: 2023-08-03.

Power transfer circuit including a sympathetic resonator

Номер патента: US4802080A. Автор: Burt J. Bossi,Mark A. Eberhart. Владелец: American Telephone and Telegraph Co Inc. Дата публикации: 1989-01-31.

Data driving circuit including a first operator that generates a flag signal based on a load signal and a reset signal and a second operator that generates a horizontal scanning identical signal, display apparatus comprising the same and control method thereof

Номер патента: US8159439B2. Автор: Chang-Soo Lee,Jae-Han Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2012-04-17.

Slew rate adjusting circuit for adjusting slew rate, buffer circuit including same, and slew rate adjusting method

Номер патента: US11936372B2. Автор: Jung Hoon SUL,Dong Il Seo. Владелец: MagnaChip Semiconductor Ltd. Дата публикации: 2024-03-19.

Shift array circuit and arithmetic circuit including the shift array circuit

Номер патента: US20240118866A1. Автор: Choung Ki Song,Seong Ju Lee. Владелец: SK hynix Inc. Дата публикации: 2024-04-11.

Sensing circuit for detecting characteristics of display panel and display driver integrated circuit including the same

Номер патента: US11810489B2. Автор: HaJun LEE,Jeongah Ahn,Youngsub JIN. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-11-07.

Regulating circuit including a plurality of low drop out regulators and method of operating the same

Номер патента: US20200310477A1. Автор: NOMIYAMA TAKAHIRO,Ikhwan Kim,Jiseon PAEK,Jaeyeol Han. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-10-01.

Regulating circuit including a plurality of low drop out regulators and method of operating the same

Номер патента: US11860658B2. Автор: TAKAHIRO Nomiyama,Ikhwan Kim,Jiseon PAEK,Jaeyeol Han. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-01-02.

Superconducting circuit including superconducting qubits

Номер патента: US11825752B2. Автор: Hao Deng. Владелец: Alibaba Group Holding Ltd. Дата публикации: 2023-11-21.

Clock generation circuit and voltage generation circuit including the clock generation circuit

Номер патента: US11967961B2. Автор: Hyun Chul Lee. Владелец: SK hynix Inc. Дата публикации: 2024-04-23.

Semiconductor circuit including a dc-dc converter and a voltage regulator

Номер патента: US20200083810A1. Автор: Ki Jae SONG,Jong Woon YOO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-03-12.

Superconducting circuit including superconducting qubits

Номер патента: US11489101B2. Автор: Hao Deng. Владелец: Alibaba Group Holding Ltd. Дата публикации: 2022-11-01.

Superconducting circuit including superconducting qubits

Номер патента: US20230031455A1. Автор: Hao Deng. Владелец: Alibaba Group Holding Ltd. Дата публикации: 2023-02-02.

Integrated circuit including standard cells and method of designing the same

Номер патента: US20240169137A1. Автор: Wootae Kim,Juyeon KIM,Jungho DO,Seungyoung Lee,Jisu YU,Hyeongyu You. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-05-23.

Vertical stacking of multiple integrated circuits including soi-based optical components

Номер патента: WO2006084237A8. Автор: Vipulkumar Patel,Kalpendu Shastri,John Fangman,Dave Piede. Владелец: Dave Piede. Дата публикации: 2007-09-20.

Superconducting circuit including superconducting qubits

Номер патента: EP3981024A2. Автор: Hao Deng. Владелец: Alibaba Group Holding Ltd. Дата публикации: 2022-04-13.

Superconducting circuit including superconducting qubits

Номер патента: US20200388745A1. Автор: Hao Deng. Владелец: Alibaba Group Holding Ltd. Дата публикации: 2020-12-10.

Superconducting circuit including superconducting qubits

Номер патента: WO2020256883A2. Автор: Hao Deng. Владелец: ALIBABA GROUP HOLDING LIMITED. Дата публикации: 2020-12-24.

Superconducting circuit including superconducting qubits

Номер патента: US20240090347A1. Автор: Hao Deng. Владелец: Alibaba Group Holding Ltd. Дата публикации: 2024-03-14.

Integrated circuit including multi-height standard cell and method of designing the same

Номер патента: US20200243502A1. Автор: Min-Su Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-07-30.

Integrated circuit including multiple height cell and method of designing the same

Номер патента: US20220005801A1. Автор: Sungok Lee,SangDo Park,Dayeon CHO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-01-06.

Heat dissipation circuit and regulator control circuit including the same

Номер патента: US20180203479A1. Автор: Sung Gon Kim,Ju Hyun Lee,Chun Sik Jung,Kyu Ho Kim. Владелец: Silicon Works Co Ltd. Дата публикации: 2018-07-19.

Data current generation circuit including a compensation control circuit, driving method, driver chip and display panel

Номер патента: US11521550B2. Автор: Ping-Lin Liu,Haodong ZHANG. Владелец: Seeya Optronics Co Ltd. Дата публикации: 2022-12-06.

Switch device and circuit including switch device

Номер патента: US20120168290A1. Автор: Shinobu Fujita. Владелец: Individual. Дата публикации: 2012-07-05.

Disguising test pads in a semiconductor package

Номер патента: US20130033284A1. Автор: Arie Frenklakh. Владелец: SanDisk Technologies LLC. Дата публикации: 2013-02-07.

Electrical device with test pads encased within the packaging material

Номер патента: US20200211913A1. Автор: Joseph A. DE LA CERDA. Владелец: Micron Technology Inc. Дата публикации: 2020-07-02.

ELECTRICAL DEVICE WITH TEST PADS ENCASED WITHIN THE PACKAGING MATERIAL

Номер патента: US20200357708A1. Автор: De La Cerda Joseph A.. Владелец: . Дата публикации: 2020-11-12.

An electrical device with test pads encased within the packaging material

Номер патента: EP3903345A4. Автор: Joseph A. DE LA CERDA. Владелец: Micron Technology Inc. Дата публикации: 2022-10-05.

An electrical device with test pads encased within the packaging material

Номер патента: TW202042349A. Автор: 拉 瑟達 喬瑟夫 Ａ 德. Владелец: 美商美光科技公司. Дата публикации: 2020-11-16.

An electrical device with test pads encased within the packaging material

Номер патента: WO2020140065A1. Автор: Joseph A. DE LA CERDA. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2020-07-02.

Disguising test pads in a semiconductor package

Номер патента: US7901957B2. Автор: Arie Frenklakh. Владелец: SanDisk Corp. Дата публикации: 2011-03-08.

Static random-access memory (sram) array circuits including bilateral well tap cells with reduced width folded finger structure

Номер патента: WO2022212979A1. Автор: Sunil Sharma,Anne Srikanth,Yandong Gao,Channappa Desai,Pradeep Jayadev Kodlipet. Владелец: QUALCOMM INCORPORATED. Дата публикации: 2022-10-06.

Shift register, scanning signal line driving circuit including same, and display device including same

Номер патента: US20230206875A1. Автор: Jun Nishimura,Kengo Hara,Yohei Takeuchi,Yoshihito Hara,Tohru Daitoh. Владелец: Sharp Display Technology Corp. Дата публикации: 2023-06-29.

Operational transconductance amplifier circuit including active inductor

Номер патента: US20220209729A1. Автор: Youngdon CHOI,Junghwan Choi,Youngchul Cho,Seungjin PARK,Baekjin Lim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-06-30.

Charge transfer device and a semiconductor circuit including the device

Номер патента: US6510193B1. Автор: Mamoru Miyawaki,Tetsunobu Kochi. Владелец: Canon Inc. Дата публикации: 2003-01-21.

Semiconductor device having diode connectedto memory device and circuit including the same

Номер патента: US11950409B2. Автор: Hsih-Yang Chiu. Владелец: Nanya Technology Corp. Дата публикации: 2024-04-02.

Integrated circuit including embedded memory device for performing dual-transient word line assist using triple power source and device having the same

Номер патента: US20170194047A1. Автор: Sung Hyun Park,Yong Ho Kim,Tae Joong Song,Woojin Rim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-07-06.

Integrated circuit including memory, and write method

Номер патента: US20180261287A1. Автор: Shinichi Yasuda,Mari Matsumoto. Владелец: Toshiba Corp. Дата публикации: 2018-09-13.

Semiconductor device having diode connectedto memory device and circuit including the same

Номер патента: US20230320081A1. Автор: Hsih-Yang Chiu. Владелец: Nanya Technology Corp. Дата публикации: 2023-10-05.

System including programmable integrated circuit including first areas having same shape and second areas formed between first areas, and operation processing device and method for controlling the programmable integrated circuit

Номер патента: US10319436B2. Автор: Hidetoshi Matsumura. Владелец: Fujitsu Ltd. Дата публикации: 2019-06-11.

Transistor circuits including fringeless transistors and method of making the same

Номер патента: US12027520B2. Автор: Hiroyuki Ogawa,Dai Iwata,Akihiro YUU. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-07-02.

Integrated circuit including backside wires

Номер патента: US20240365528A1. Автор: Taehyung Kim,Changhoon Sung,Hoyoung Tang,Eojin LEE,Hyojin Cho. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-10-31.

Static random-access memory (sram) array circuits including bilateral well tap cells with reduced width folded finger structure

Номер патента: EP4315335A1. Автор: Sunil Sharma,Anne Srikanth,Yandong Gao,Channappa Desai,Pradeep Jayadev Kodlipet. Владелец: Qualcomm Inc. Дата публикации: 2024-02-07.

Semiconductor package including test pattern and method of fabricating the same

Номер патента: US20240213104A1. Автор: Youngbae Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-06-27.

EMC TEST STAND INCLUDING TEST EQUIPMENT INTENDED FOR INSTALLATION ON THE AIRCRAFT

Номер патента: RU2015150462A. Автор: Реми САЛЬВАТЖ,Сириль ЛЭР. Владелец: Снекма. Дата публикации: 2017-06-02.

TEST PAD STRUCTURE, A PAD STRUCTURE FOR INSPECTING A SEMICONDUCTOR CHIP AND A WIRING SUBSTRATE FOR A TAPE PACKAGING HAVING THE SAME

Номер патента: US20160334463A1. Автор: LIM So-Young,Lee Sang-Heui. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2016-11-17.

Tool and method for refining a circuit including parametric analog elements

Номер патента: US09858376B2. Автор: Antonio Visconti,David LeHoty. Владелец: Cypress Semiconductor Corp. Дата публикации: 2018-01-02.

IMPROVED DIE TESTING USING TOP SURFACE TEST PADS

Номер патента: US20170003341A1. Автор: Whetsel Lee D.,Antley Richard L.. Владелец: . Дата публикации: 2017-01-05.

OFFSET TEST PADS FOR WLCSP FINAL TEST

Номер патента: US20190006249A1. Автор: Pedersen Bard M.. Владелец: . Дата публикации: 2019-01-03.

Die testing using top surface test pads

Номер патента: US20180106858A1. Автор: Lee D. Whetsel,Richard L. Antley. Владелец: Texas Instruments Inc. Дата публикации: 2018-04-19.

STRUCTURE AND METHODOLOGY FOR DETERMINING TEST PAD INTEGRITY

Номер патента: US20200124638A1. Автор: Vega Reinaldo,Nieves Pablo,Sinha Kushagra. Владелец: . Дата публикации: 2020-04-23.

APPARATUS AND METHOD FOR TESTING PAD CAPACITANCE

Номер патента: US20150276857A1. Автор: Muljono Harry,SUN Linda K.. Владелец: . Дата публикации: 2015-10-01.

TEST PAD AND METHOD FOR DETERMINING POSITIONS OF PROBES

Номер патента: US20180275191A1. Автор: LIU EDDY,YANG WEI-DA,HOU XIAO-FENG,LIANG GUO-DONG. Владелец: . Дата публикации: 2018-09-27.

DIE TESTING USING TOP SURFACE TEST PADS

Номер патента: US20200278389A1. Автор: Whetsel Lee D.,Antley Richard L.. Владелец: . Дата публикации: 2020-09-03.

TEXTURED TEST PADS FOR PRINTED CIRCUIT BOARD TESTING

Номер патента: US20200383203A1. Автор: Fabry Michael Richard,Green William Bradford. Владелец: . Дата публикации: 2020-12-03.

DISPLAY DEVICE WITH CONNECTION BOARD AND METHOD OF TESTING PAD CONTACT STATE THEREOF

Номер патента: US20200402433A1. Автор: KIM Yun-tae,Kim Sung-Jun,KWON Myung-Seok,KIM Jeong-Hyun,KIM Deok-Hwan,PARK Bongchun,Kim Hasook. Владелец: . Дата публикации: 2020-12-24.

Semiconductor test pad using stacked thin sheets of metal and manufacturing method thereof

Номер патента: KR101374770B1. Автор: 윤경섭. Владелец: 실리콘밸리(주). Дата публикации: 2014-03-17.

Test pads for measuring properties of a wafer

Номер патента: WO2007022538A3. Автор: Xiafang Zhang,Sergio Edelstein,Ahmad Khan,Jianou Shi,Shiyou Pei,Shu Chun Huang,Dennis Yeh,Jeffrey A Rzepiela,Yiping Feng,Alexander Kagan. Владелец: Alexander Kagan. Дата публикации: 2009-04-23.

Chip manufacturing method for cutting test pads from integrated circuits by sectioning circuit chips from circuit substrate

Номер патента: US6686224B2. Автор: Kunihiko Higashi. Владелец: NEC Electronics Corp. Дата публикации: 2004-02-03.

Apparatus and method for testing pad capacitance

Номер патента: US9093412B2. Автор: Harry Muljono,Linda K. Sun. Владелец: Intel Corp. Дата публикации: 2015-07-28.

Semiconductor chip with test pads and tape carrier package using the same

Номер патента: US7238962B2. Автор: Dong-Han Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2007-07-03.

Semiconductor package having test pads on top and bottom substrate surfaces and method of testing same

Номер патента: US20080054261A1. Автор: Dong-Han Kim,Hee-Seok Lee,Eun-Seok Song. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2008-03-06.

Improved test pad and probe card for wafer acceptance testing and other applications

Номер патента: TW200617398A. Автор: Chao-Yuan Su,Chen-Der Huang,Pei-Haw Tsao,Te-Tsung Chao. Владелец: Taiwan Semiconductor Mfg Co Ltd. Дата публикации: 2006-06-01.

Improved test pad and probe card for wafer acceptance testing and other applications

Номер патента: TWI293368B. Автор: Chender Huang,Te Tsung Chao,Chao Yuan Su,Pei Haw Tsao. Владелец: Taiwan Semiconductor Mfg. Дата публикации: 2008-02-11.

SEMICONDUCTOR DEVICE INCLUDING TEST CIRCUIT

Номер патента: US20180372795A1. Автор: Kim Seong Jin,YUN Dae Ho. Владелец: . Дата публикации: 2018-12-27.

Semiconductor device including test structure

Номер патента: US11488877B2. Автор: Hyun Jin Kim,Hyun Chul Sagong,June Kyun Park,Ki Hyun Choi,Sang Woo Pae. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-11-01.

Display device with connection board and method of testing pad contact state thereof

Номер патента: US20200402433A1. Автор: Sung-Jun Kim,Jeong-Hyun Kim,Yun-Tae Kim,Deok-Hwan Kim,Hasook Kim,Myung-Seok KWON,Bongchun PARK. Владелец: Samsung Display Co Ltd. Дата публикации: 2020-12-24.

Semiconductor integrated circuit including test pins and method for testing thereof

Номер патента: US7057411B2. Автор: Nam-Jung Her,Seok-Young Han. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2006-06-06.

Display device including test element group, and method for inspecting defect of display device

Номер патента: US11910692B2. Автор: Yun-Mo CHUNG,Seunghyun PARK. Владелец: Samsung Display Co Ltd. Дата публикации: 2024-02-20.

Test Pad Structure, A Pad Structure For Inspecting A Semiconductor Chip And A Wiring Substrate For A Tape Package Having The Same

Номер патента: US20130127486A1. Автор: LIM So-Young,Lee Sang-Heui. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2013-05-23.

ID CHIP SOCKET FOR TEST CONNECTOR ASSEMBLY, TEST CONNECTOR ASSEMBLY INCLUDING ID CHIP SOCKET, AND TEST EQUIPMENT SET INCLUDING TEST CONNECTOR ASSEMBLY

Номер патента: US20200150148A1. Автор: Chung Young Bae. Владелец: . Дата публикации: 2020-05-14.

Method for Forming a Test Pad and Method for Performing Array Test Using the Test Pad

Номер патента: US20160341789A1. Автор: DU Peng,HU Yutong. Владелец: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.. Дата публикации: 2016-11-24.

ID chip socket for test connector assembly, test connector assembly including ID chip socket, and test equipment set including test connector assembly

Номер патента: US11073536B2. Автор: Young Bae Chung. Владелец: ISC Co Ltd. Дата публикации: 2021-07-27.

Chip on film (COF) package having test pad for testing electrical function of chip and method for manufacturing same

Номер патента: TW523853B. Автор: Hyoung-ho Kim,Ye-Jung Jung. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2003-03-11.

APPARATUSES INCLUDING TEST SEGMENT CIRCUITS HAVING LATCH CIRCUITS FOR TESTING A SEMICONDUCTOR DIE

Номер патента: US20190271739A1. Автор: LIU BIN,Meier Nathaniel J.,Werhane Kevin G.. Владелец: . Дата публикации: 2019-09-05.

APPARATUSES INCLUDING TEST SEGMENT CIRCUITS AND METHODS FOR TESTING THE SAME

Номер патента: US20180364303A1. Автор: LIU BIN,Meier Nathaniel J.,Werhane Kevin G.. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2018-12-20.

Integrated circuit including NCEM-enabled, side-to-side gap-configured fill cells, with NCEM pads formed from at least three conductive stripes positioned between adjacent gates

Номер патента: US09947601B1. Автор: Markus Rauscher,Hideki Matsuhashi,Stephen Lam,Christopher Hess,Indranil De,Larg Weiland,Dennis Ciplickas,Tomasz Brozek,Jeremy Cheng,Simone Comensoli,Kelvin Doong,Hans Eisenmann,Timothy Fiscus,Jonathan HAIGH,John Kibarian,Sherry Lee,Marci Liao,Sheng-Che Lin,Kimon Michaels,Conor O'Sullivan,Vyacheslav Rovner,Andrzej Strojwas,Marcin Strojwas,Carl Taylor,Rakesh Vallishayee,Nobuharu Yokoyama. Владелец: PDF Solutions Inc. Дата публикации: 2018-04-17.

Integrated circuit including NCEM-enabled, snake-configured fill cells, with NCEM pads formed from at least three conductive stripes positioned between adjacent gates

Номер патента: US09922890B1. Автор: Markus Rauscher,Hideki Matsuhashi,Stephen Lam,Christopher Hess,Indranil De,Larg Weiland,Dennis Ciplickas,Tomasz Brozek,Jeremy Cheng,Simone Comensoli,Kelvin Doong,Hans Eisenmann,Timothy Fiscus,Jonathan HAIGH,John Kibarian,Sherry Lee,Marci Liao,Sheng-Che Lin,Kimon Michaels,Conor O'Sullivan,Vyacheslav Rovner,Andrzej Strojwas,Marcin Strojwas,Carl Taylor,Rakesh Vallishayee,Nobuharu Yokoyama. Владелец: PDF Solutions Inc. Дата публикации: 2018-03-20.

Integrated circuit including NCEM-enabled, via-open/resistance-configured fill cells, with NCEM pads formed from at least three conductive stripes positioned between adjacent gate

Номер патента: US09911670B1. Автор: Markus Rauscher,Hideki Matsuhashi,Stephen Lam,Christopher Hess,Indranil De,Larg Weiland,Dennis Ciplickas,Tomasz Brozek,Jeremy Cheng,Simone Comensoli,Kelvin Doong,Hans Eisenmann,Timothy Fiscus,Jonathan HAIGH,John Kibarian,Sherry Lee,Marci Liao,Sheng-Che Lin,Kimon Michaels,Conor O'Sullivan,Vyacheslav Rovner,Andrzej Strojwas,Marcin Strojwas,Carl Taylor,Rakesh Vallishayee,Nobuharu Yokoyama. Владелец: PDF Solutions Inc. Дата публикации: 2018-03-06.

Integrated circuit including NCEM-enabled, diagonal gap-configured fill cells, with NCEM pads formed from at least three conductive stripes positioned between adjacent gates

Номер патента: US09911669B1. Автор: Markus Rauscher,Hideki Matsuhashi,Stephen Lam,Christopher Hess,Indranil De,Larg Weiland,Dennis Ciplickas,Tomasz Brozek,Jeremy Cheng,Simone Comensoli,Kelvin Doong,Hans Eisenmann,Timothy Fiscus,Jonathan HAIGH,John Kibarian,Sherry Lee,Marci Liao,Sheng-Che Lin,Kimon Michaels,Conor O'Sullivan,Vyacheslav Rovner,Andrzej Strojwas,Marcin Strojwas,Carl Taylor,Rakesh Vallishayee,Nobuharu Yokoyama. Владелец: PDF Solutions Inc. Дата публикации: 2018-03-06.

Integrated circuit including NCEM-enabled, corner gap-configured fill cells, with NCEM pads formed from at least three conductive stripes positioned between adjacent gates

Номер патента: US09911668B1. Автор: Markus Rauscher,Hideki Matsuhashi,Stephen Lam,Christopher Hess,Indranil De,Larg Weiland,Dennis Ciplickas,Tomasz Brozek,Jeremy Cheng,Simone Comensoli,Kelvin Doong,Hans Eisenmann,Timothy Fiscus,Jonathan HAIGH,John Kibarian,Sherry Lee,Marci Liao,Sheng-Che Lin,Kimon Michaels,Conor O'Sullivan,Vyacheslav Rovner,Andrzej Strojwas,Marcin Strojwas,Carl Taylor,Rakesh Vallishayee,Nobuharu Yokoyama. Владелец: PDF Solutions Inc. Дата публикации: 2018-03-06.

Integrated circuit including NCEM-Enabled, tip-to-tip gap-configured fill cells, with NCEM pads formed from at least three conductive stripes positioned between adjacent gates

Номер патента: US09881843B1. Автор: Markus Rauscher,Hideki Matsuhashi,Stephen Lam,Christopher Hess,Indranil De,Larg Weiland,Dennis Ciplickas,Tomasz Brozek,Jeremy Cheng,Simone Comensoli,Kelvin Doong,Hans Eisenmann,Timothy Fiscus,Jonathan HAIGH,John Kibarian,Sherry Lee,Marci Liao,Sheng-Che Lin,Kimon Michaels,Conor O'Sullivan,Vyacheslav Rovner,Andrzej Strojwas,Marcin Strojwas,Carl Taylor,Rakesh Vallishayee,Nobuharu Yokoyama. Владелец: PDF Solutions Inc. Дата публикации: 2018-01-30.

Integrated circuit including NCEM-enabled, interlayer overlap-configured fill cells, with NCEM pads formed from at least three conductive stripes positioned between adjacent gates

Номер патента: US09870962B1. Автор: Markus Rauscher,Hideki Matsuhashi,Stephen Lam,Christopher Hess,Indranil De,Larg Weiland,Dennis Ciplickas,Tomasz Brozek,Jeremy Cheng,Simone Comensoli,Kelvin Doong,Hans Eisenmann,Timothy Fiscus,Jonathan HAIGH,John Kibarian,Sherry Lee,Marci Liao,Sheng-Che Lin,Kimon Michaels,Conor O'Sullivan,Vyacheslav Rovner,Andrzej Strojwas,Marcin Strojwas,Carl Taylor,Rakesh Vallishayee,Nobuharu Yokoyama. Владелец: PDF Solutions Inc. Дата публикации: 2018-01-16.

SIGNAL TRANSMISSION LINES WITH TEST PAD

Номер патента: US20130154680A1. Автор: LIN YU-HSU. Владелец: HON HAI PRECISION INDUSTRY CO., LTD.. Дата публикации: 2013-06-20.

STRUCTURE AND METHODOLOGY FOR HIGH INTENSITY TEST PROBE ALIGNMENT TO DEVICE TEST PADS

Номер патента: US20200124663A1. Автор: Vega Reinaldo,Nieves Pablo,Sinha Kushagra. Владелец: . Дата публикации: 2020-04-23.

APPARATUS FOR DETECTING MISALIGNMENT OF TEST PAD

Номер патента: US20140320156A1. Автор: KIM Jong Su. Владелец: SK HYNIX INC.. Дата публикации: 2014-10-30.

SEMICONDUCTOR TEST PAD WITH STACKED THIN METAL SHEETS AND METHOD FOR MANUFACTURING THE SAME

Номер патента: US20160254201A1. Автор: YOUN Kyoungseob. Владелец: . Дата публикации: 2016-09-01.

DEVICE TEST PAD PROBE CARD STRUCTURE WITH INDIVIDUAL PROBE MANIPULATION CAPABILITY

Номер патента: US20200284823A1. Автор: Vega Reinaldo,Nieves Pablo,Sinha Kushagra. Владелец: . Дата публикации: 2020-09-10.

Semiconductor test pad having stacked metal foils and manufacturing method thereof

Номер патента: EP2947685A4. Автор: Kyoungseob Youn. Владелец: Silicone Valley Co Ltd. Дата публикации: 2016-04-27.

Semiconductor test pad using adhesive and stacked thin sheets of metal and manufacturing method thereof

Номер патента: TWI570825B. Автор: 尹璟燮. Владелец: 硅谷股份公司. Дата публикации: 2017-02-11.

Chip-on-film package having test pads for electrical property evaluation and chip-on-film package forming method

Номер патента: JP4611600B2. Автор: 亨 鎬 金,禮 貞 鄭. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2011-01-12.

Multi-chip module with accessible test pads and test fixture

Номер патента: TW373280B. Автор: Thomas J Bardsley,Jed R Eastmam. Владелец: Ibm. Дата публикации: 1999-11-01.

Electrical circuit including a supercapacitor with reduced leakage

Номер патента: US11387054B2. Автор: Shawn Hansen. Владелец: Kyocera Avx Components Corp. Дата публикации: 2022-07-12.

Electrical circuit including a supercapacitor with reduced leakage

Номер патента: EP3756202A1. Автор: Shawn Hansen. Владелец: AVX Corp. Дата публикации: 2020-12-30.

Direct measurement of loss angle tangent of capacitor - uses measurement of applied alternating reference voltage and voltage after application to RC network including tested capacitor

Номер патента: FR2349144A1. Автор: . Владелец: Chauvin Arnoux SAS. Дата публикации: 1977-11-18.

Voltage detector and communication circuit including voltage detector

Номер патента: US20190199459A1. Автор: Chung-Yu Lin. Владелец: Realtek Semiconductor Corp. Дата публикации: 2019-06-27.

Metering Circuit Including a Floating Count Window to Determine a Count

Номер патента: US20150180479A1. Автор: Marty Pflum. Владелец: Silicon Laboratories Inc. Дата публикации: 2015-06-25.

Integrated circuit including a physically unclonable function device and corresponding method for implementing a physically unclonable function

Номер патента: US20230238060A1. Автор: Francesco La Rosa,Antonino Conte. Владелец: STMICROELECTRONICS SRL. Дата публикации: 2023-07-27.

Testing system for optical aiming systems with light emitter systems including testing system for thermal drive and related methods

Номер патента: US20170307331A1. Автор: Brandon Clarke,Matthew Thurner,Ronald A Volpone,David Scot Curry. Владелец: US Department of Navy. Дата публикации: 2017-10-26.

Testing pad assembly

Номер патента: US2514511A. Автор: Arthur H Pederson,George E Holback,Jr Thomas R Darmody. Владелец: Glenn L Martin Co. Дата публикации: 1950-07-11.

TESTING SYSTEM FOR OPTICAL AIMING SYSTEMS WITH LIGHT EMITTER SYSTEMS INCLUDING TESTING SYSTEM FOR THERMAL DRIVE AND RELATED METHODS

Номер патента: US20170307331A1. Автор: Clarke Brandon,Thurner Matthew,Volpone Ronald A,Curry David Scot. Владелец: . Дата публикации: 2017-10-26.

QUANTIFYING COLOR CHANGES OF CHEMICAL TEST PADS INDUCED BY SPECIFIC CONCENTRATIONS OF BIOLOGICAL ANALYTES UNDER DIFFERENT LIGHTING CONDITIONS

Номер патента: US20160252460A1. Автор: Smart Anthony,Rowe Aaron Alexander,De Brouwer Walter,Zizi Martin,Burg Bernard. Владелец: . Дата публикации: 2016-09-01.

QUANTIFYING COLOR CHANGES OF CHEMICAL TEST PADS INDUCED BY SPECIFIC CONCENTRATIONS OF BIOLOGICAL ANALYTES UNDER DIFFERENT LIGHTING CONDITIONS

Номер патента: US20150308961A1. Автор: Smart Anthony,Rowe Aaron Alexander,De Brouwer Walter,Zizi Martin,Burg Bernard. Владелец: . Дата публикации: 2015-10-29.

DIAGNOSTIC TEST STRIP WITH SELF-ATTACHING TEST PADS AND METHODS OF USE THEREFORE

Номер патента: US20160313308A1. Автор: Price William Pat,Titmus Ted. Владелец: . Дата публикации: 2016-10-27.

Diagnostic test strips having one or more test pad layers and method of use therefore

Номер патента: US20160313309A1. Автор: William Pat Price,Ted Titmus. Владелец: Individual. Дата публикации: 2016-10-27.

MECHANICAL ATTACHMENT OF TEST PADS TO A DIAGNOSTIC TEST STRIP

Номер патента: US20160313320A1. Автор: Price William Pat,Titmus Ted. Владелец: . Дата публикации: 2016-10-27.

QUANTIFYING COLOR CHANGES OF CHEMICAL TEST PADS INDUCED BY SPECIFIC CONCENTRATIONS OF BIOLOGICAL ANALYTES UNDER DIFFERENT LIGHTING CONDITIONS

Номер патента: US20190310203A1. Автор: Smart Anthony,Rowe Aaron Alexander,De Brouwer Walter,Zizi Martin,Burg Bernard. Владелец: . Дата публикации: 2019-10-10.

Test Pad and System

Номер патента: US20200386737A1. Автор: Goodman Bonnie,Goodman Jeff. Владелец: . Дата публикации: 2020-12-10.

Method for detection of the adulterant urine luckTM in urine using liquid chemistry, dry chemistry test pads, and lateral flow

Номер патента: US20030045003A1. Автор: Jack Smith. Владелец: Smith Jack V.. Дата публикации: 2003-03-06.

Method for detection of bromine in urine using liquid chemistry, dry chemistry test pads, and lateral flow

Номер патента: US20030027350A1. Автор: Jack Smith. Владелец: Individual. Дата публикации: 2003-02-06.

Method for detection of bromine in urine using liquid chemistry, dry chemistry test pads, and lateral flow

Номер патента: US20040248310A1. Автор: Jack Smith. Владелец: Individual. Дата публикации: 2004-12-09.

Fecal occult blood test pad

Номер патента: WO2018137527A1. Автор: 周文彬,王信尧,吴智良,吴旻宪. Владелец: 吴智良. Дата публикации: 2018-08-02.

Detection of the presence of a test pad on a test strip

Номер патента: EP3555598B1. Автор: Christophe Godefroy,Carlos Ramirez,Patricio Vidal,Jindan Zhou,Gregory YEAGER,Jorge LEON. Владелец: Beckman Coulter Inc. Дата публикации: 2023-10-11.

Test pad

Номер патента: GB8400830D0. Автор: . Владелец: Helena Laboratories Corp. Дата публикации: 1984-02-15.

Silicon carbide integrated circuit including P-N junction photodiode

Номер патента: US10763284B1. Автор: Neil Goldsman,Zeynep Dilli,Akin Akturk,Brendan Michael Cusack,Mitchell Adrian Gross. Владелец: CoolCAD Electronics LLC. Дата публикации: 2020-09-01.

System and Circuit Including Multiple Photo Detectors

Номер патента: US20110248151A1. Автор: Wayne T. Holcombe,Miroslav Svajda. Владелец: Silicon Laboratories Inc. Дата публикации: 2011-10-13.

Power management circuit including on-board current-sense resistor and on-die current sensor

Номер патента: US11829168B2. Автор: Richard Gerard Hofmann,Lipeng Cao,Matthew Severson,Timothy Zoley,Kevin Bradley Citterelle. Владелец: Qualcomm Inc. Дата публикации: 2023-11-28.

Power management circuit including on-board current-sense resistor and on-die current sensor

Номер патента: EP4070119A1. Автор: Richard Gerard Hofmann,Lipeng Cao,Matthew Severson,Timothy Zoley,Kevin Bradley Citterelle. Владелец: Qualcomm Inc. Дата публикации: 2022-10-12.

Integrated circuits including strain gauge sensors

Номер патента: US12115790B2. Автор: John Rossi,James Michael Gardner,Scott A. Linn. Владелец: Hewlett Packard Development Co LP. Дата публикации: 2024-10-15.

Comparative phenotype analysis of cells, including testing of biologically active compounds

Номер патента: US20030162164A1. Автор: Barry Bochner,Amy Morgan. Владелец: Biolog Inc. Дата публикации: 2003-08-28.

Food processing system and a method including testing a foreign object sensor

Номер патента: EP3427050A1. Автор: Nicholson James HIRZEL. Владелец: Kellogg Co. Дата публикации: 2019-01-16.

Food processing system and a method including testing a foreign object sensor.

Номер патента: MX2018010450A. Автор: James Hirzel Nicholson. Владелец: Kellog Co. Дата публикации: 2018-11-09.

Food processing system and a method including testing a foreign object sensor

Номер патента: CA3017340A1. Автор: Nicholson James HIRZEL. Владелец: Kellogg Co. Дата публикации: 2017-09-14.

food processing system and method that includes testing a foreign object sensor

Номер патента: BR112018017279A2. Автор: James Hirzel Nicholson. Владелец: Kellog Co. Дата публикации: 2019-01-15.

Immunological determination of haemoglobin derivative in a blood sample including test kits and haemolysis reagents for use in such method.

Номер патента: NZ247054A. Автор: Erich Schneider,Johann Karl,Lorenz Kerscher. Владелец: Boehringer Mannheim GmbH. Дата публикации: 1995-02-24.

Food processing system and a method including testing a foreign object sensor

Номер патента: WO2017156226A1. Автор: Nicholson James HIRZEL. Владелец: Kellogg Company. Дата публикации: 2017-09-14.

Temperature sensing circuit including multiple thermistors

Номер патента: US20230160758A1. Автор: Matthew R. POLAKOWSKI,Kyle C. FASSBENDER. Владелец: Milwaukee Electric Tool Corp. Дата публикации: 2023-05-25.

Food processing system and a method including testing a foreign object sensor

Номер патента: AU2017229762A1. Автор: Nicholson James HIRZEL. Владелец: Kellogg Co. Дата публикации: 2018-08-30.

Data Center Environment Architecture Including Test Case Scoring For Use When Performing Test Automation Orchestration

Номер патента: US20240249219A1. Автор: Sunil A. Vyas,Vijay Narayana Reddy Halaharvi,Mark J. Keating,Christian M. Stiba,Gong-Jer Yeh. Владелец: Dell Products LP. Дата публикации: 2024-07-25.

Test circuit for liquid crystal display device, LCD device including test circuit, and testing method for LCD device

Номер патента: US7915906B2. Автор: Kazuyuki Hashimoto. Владелец: TPO Hong Kong Holding Ltd. Дата публикации: 2011-03-29.

Test Circuit for Liquid Crystal Display Device, LCD Device Including Test Circuit, and Testing Method for LCD Device

Номер патента: US20090096728A1. Автор: Kazuyuki Hashimoto. Владелец: TPO Hong Kong Holding Ltd. Дата публикации: 2009-04-16.

Visual and audio warning system including test ledger for automated door

Номер патента: WO2013006848A2. Автор: Clayton L. FINN,Daniel R. WILLIAMS. Владелец: Williams Daniel R. Дата публикации: 2013-01-10.

Film type package comprising a plurality of test pads disposed on a plurality of margin areas and separated from a plurality of first connection pads by a cut line

Номер патента: US20220113577A1. Автор: Byung Hun Han,Jung Eun KOO,So Young LIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-04-14.

Composing future application tests including test action data

Номер патента: US10365995B2. Автор: Amichai Nitsan,Inbar SHANI,Yaron Burg. Владелец: ENTIT SOFTWARE LLC. Дата публикации: 2019-07-30.

Test apparatus, test system including test apparatus, test method using test apparatus and test system, and method of manufacturing integrated circuit

Номер патента: US20190213362A1. Автор: Jae Seol LEE,Ki Ock HONG,Hae Seong JEONG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-07-11.

Test apparatus, test system including test apparatus, test method using test apparatus and test system, and method of manufacturing integrated circuit

Номер патента: US20190213362A1. Автор: Jae Seol LEE,Ki Ock HONG,Hae Seong JEONG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-07-11.

Circuit for controlling the lines of a display screen and including test means with a single output

Номер патента: US5262720A. Автор: Patrice Senn,Alan Lelah,Gilbert Martel,Denis Pradel. Владелец: Centre National dEtudes des Telecommunications CNET. Дата публикации: 1993-11-16.

Semiconductor device including ferroelectric material, neuromorphic circuit including the semiconductor device, and neuromorphic computing apparatus including the neuromorphic circuit

Номер патента: US20240113127A1. Автор: Sangwook Kim,Yunseong LEE,Jinseong Heo,Sanghyun JO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-04-04.

Standard cells, integrated circuits including the same and design methods thereof

Номер патента: US20240339454A1. Автор: Hyunchul Hwang,Dae Seong LEE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-10-10.

Nfc device powered on in response to radio frequency signal, nfc tag circuit included therein, and method of operating the nfc device

Номер патента: EP4412096A1. Автор: Sung Wan Kim,Sung Hun Chun,Pyeong Han Lee,Kwang Beom PARK,Chang Ho RYU. Владелец: 3A LOGICS Inc. Дата публикации: 2024-08-07.

Display driver integrated circuit including a plurality of timing controller-embedded drivers for driving a plurality of display regions in synchronization and a display device including the same

Номер патента: US09858897B2. Автор: Hyun-Sang Park,Kyoung-Hwan Kwon,Choong-Bin KIM,Dong-Heon HAN. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-01-02.

Integrated circuits including standard cells and methods of manufacturing the integrated circuits

Номер патента: US20200050728A1. Автор: Jin-Tae Kim,Tae-Joong Song,Seung-Young Lee,Jin-young Lim,Sung-We Cho. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-02-13.

Portable nfc device that releases reset in response to radio frequency signal, and nfc tag circuit included therein

Номер патента: US20240256816A1. Автор: Sung Wan Kim,Sung Hun Chun,Pyeong Han Lee,Kwang Beom PARK,Chang Ho RYU. Владелец: 3A LOGICS Inc. Дата публикации: 2024-08-01.

Photonic integrated circuit including semiconductor optical amplifiers

Номер патента: US20240291568A1. Автор: Peter Evans,Scott Corzine,Mehrdad Ziari,Vikrant Lal,Thomas Frost,David Henry Welch. Владелец: Infinera Corp. Дата публикации: 2024-08-29.

Circuits including non-linear components for electronic devices

Номер патента: US12075656B2. Автор: Sean William MUIR. Владелец: Amorphyx Inc. Дата публикации: 2024-08-27.

Portable nfc device that releases reset in response to radio frequency signal, and nfc tag circuit included therein

Номер патента: EP4412095A1. Автор: Sung Wan Kim,Sung Hun Chun,Pyeong Han Lee,Kwang Beom PARK,Chang Ho RYU. Владелец: 3A LOGICS Inc. Дата публикации: 2024-08-07.

Photonic integrated circuit including semiconductor optical amplifiers

Номер патента: US20240288749A1. Автор: Peter Evans,Scott Corzine,David Welch,Mehrdad Ziari,Vikrant Lal,Thomas Frost. Владелец: Infinera Corp. Дата публикации: 2024-08-29.

Photonic integrated circuit including semiconductor optical amplifiers

Номер патента: US20240291566A1. Автор: Peter Evans,Scott Corzine,David Welch,Mehrdad Ziari,Vikrant Lal,Thomas Frost. Владелец: Infinera Corp. Дата публикации: 2024-08-29.

Photonic integrated circuit including semiconductor optical amplifiers

Номер патента: US20240291567A1. Автор: Peter Evans,Mehrdad Ziari,Daniel Semrau. Владелец: Infinera Corp. Дата публикации: 2024-08-29.

Photonic integrated circuit including semiconductor optical amplifiers

Номер патента: US20240288632A1. Автор: Peter Evans,Mehrdad Ziari,Daniel Semrau. Владелец: Infinera Corp. Дата публикации: 2024-08-29.

Semiconductor device, array structure of semiconductor devices, neuromorphic circuit including the semiconductor devices, and computing apparatus including the neuromorphic circuit

Номер патента: US12113129B2. Автор: Jaechul Park,Youngkwan Cha. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-10-08.

Device for controlling the flow of a coolant, and circuit including such a device

Номер патента: US09897366B2. Автор: Mohamed Yahia. Владелец: Valeo Systemes Thermiques SAS. Дата публикации: 2018-02-20.

Display device including a connection board and a method for testing pad connection thereof

Номер патента: US20210027680A1. Автор: SooYeon Kim,Junghwan Cho,Taegon Im,Jiye Lee,Hee-Jeong Seo. Владелец: Samsung Display Co Ltd. Дата публикации: 2021-01-28.

TEST PAD STRUCTURE FOR REUSE OF INTERCONNECT LEVEL MASKS

Номер патента: US20140234757A1. Автор: Matusiewicz Gerald. Владелец: INTERNATIONAL BUSINESS MACHINES CORPORATION. Дата публикации: 2014-08-21.

DISPLAY DEVICE AND TEST PAD THEREOF

Номер патента: US20150262897A1. Автор: CHEN Hung-Kun,CHANG Hong-Kang,HUANG Yu-Ti. Владелец: . Дата публикации: 2015-09-17.

A ipt testing pad, the fabrication method and the testing method for cog of lcd

Номер патента: KR20050003511A. Автор: 신재득. Владелец: 엘지.필립스 엘시디 주식회사. Дата публикации: 2005-01-12.

Test pad for testing liquid crystal display device

Номер патента: KR100769160B1. Автор: 김익수. Владелец: 엘지.필립스 엘시디 주식회사. Дата публикации: 2007-10-23.

Test pad static releasing device and LCD

Номер патента: CN106444180A. Автор: 张占东. Владелец: Wuhan China Star Optoelectronics Technology Co Ltd. Дата публикации: 2017-02-22.

Liquid Crystal Display device equipped test pad and manufacturing method the same

Номер патента: KR101142784B1. Автор: 이성민,박순규. Владелец: 엘지디스플레이 주식회사. Дата публикации: 2012-05-08.

Semiconductor device including ferroelectric material, neuromorphic circuit including the semiconductor device, and neuromorphic computing apparatus including the neuromorphic circuit

Номер патента: US11887989B2. Автор: Sangwook Kim,Yunseong LEE,Jinseong Heo,Sanghyun JO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-01-30.

Voltage regulator circuit including one or more thin-film transistors

Номер патента: US20240128269A1. Автор: Abhishek A. Sharma,Ravi Pillarisetty,Marko Radosavljevic,Seung Hoon Sung,Van H. Le. Владелец: Intel Corp. Дата публикации: 2024-04-18.

Integrated circuit including standard cell and method of manufacturing the integrated circuit

Номер патента: US20240303410A1. Автор: Sanghoon Baek,Seungyoung Lee,Seungman Lim,Jisu YU,Hyeongyu You,Jaeho Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-09-12.

Display device, control circuit included in the same, and method of driving the same

Номер патента: US20240371331A1. Автор: Mitsuru Fujii,Jong-Woong Park,Junhan Ko,SeokYoung YOON. Владелец: Samsung Display Co Ltd. Дата публикации: 2024-11-07.

Semiconductor chip including integrated circuit including at least five gate level conductive structures having particular spatial and electrical relationship and method for manufacturing the same

Номер патента: US09425273B2. Автор: Michael C. Smayling,Scott T. Becker. Владелец: Tela Innovations Inc. Дата публикации: 2016-08-23.

Semiconductor chip including integrated circuit including four transistors of first transistor type and four transistors of second transistor type with electrical connections between various transistors and methods for manufacturing the same

Номер патента: US09425272B2. Автор: Michael C. Smayling,Scott T. Becker. Владелец: Tela Innovations Inc. Дата публикации: 2016-08-23.

Method and apparatus for forming an integrated circuit including a memory structure

Номер патента: US5541850A. Автор: Nels B. Vander Zanden,Mossaddeq Mahmood. Владелец: VLSI Technology Inc. Дата публикации: 1996-07-30.

Electronic chip and integrated circuit including a split routing unit having first-level routers for intra-layer transmissions and second-level routers for inter-layer transmissions and transmissions to the processing units

Номер патента: US8667251B2. Автор: Didier Lattard,Walid LAFI. Владелец: Commissariat a lEnergie Atomique et aux Energies Alternatives CEA. Дата публикации: 2014-03-04.

Integrated circuit including through-silicon via and method of designing the integrated circuit

Номер патента: US20240128164A1. Автор: Taehyung Kim,Youngrok Park,Hoyoung Tang,SangShin Han. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-04-18.

Integrated circuit including different types of cells, and method and system of designing the same

Номер патента: US20200151298A1. Автор: Jae-hoon Kim,Woo-Tae Kim,Hyung-Ock Kim,Yong-Durk KIM,Joon-Young Shin. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-05-14.

Electronic circuits including hybrid voltage threshold logical entities

Номер патента: US20230035394A1. Автор: Rahul M. Rao. Владелец: International Business Machines Corp. Дата публикации: 2023-02-02.

Photonic integrated circuit including passive optical guard

Номер патента: US20230408763A1. Автор: Yusheng Bian,Andreas D. Stricker,Zhuojie Wu. Владелец: GlobalFoundries US Inc. Дата публикации: 2023-12-21.

Normalizer for performing normalization and denormalization on floating-point data and operation circuit including the same

Номер патента: US20230229391A1. Автор: Sang Hoon Oh. Владелец: SK hynix Inc. Дата публикации: 2023-07-20.

Reference voltage circuit including transistor

Номер патента: US11899487B2. Автор: Hiroyuki Kimura. Владелец: Will Semiconductor Shanghai Co Ltd. Дата публикации: 2024-02-13.

Semiconductor device, array structure of semiconductor devices, neuromorphic circuit including the semiconductor devices, and computing apparatus including the neuromorphic circuit

Номер патента: US20230040335A1. Автор: Jaechul Park,Youngkwan Cha. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-02-09.

Integrated circuit including back side conductive lines for clock signals

Номер патента: US20210344346A1. Автор: Kam-Tou SIO,Jiun-Wei Lu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-11-04.

Flip flop and design method for integrated circuit including same

Номер патента: US20230361760A1. Автор: Ahreum Kim,Minsu Kim,Eunhee Choi,Youngo Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-11-09.

Receiver, interface circuit including the same, and method of operating receiver

Номер патента: US20240223233A1. Автор: Youngho Choi,Kyeongjoon Ko,Donghyuk LIM,Dasom PARK,Byoungjoo Yoo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-04.

Receiver, interface circuit including the same, and method of operating receiver

Номер патента: EP4398119A1. Автор: Youngho Choi,Kyeongjoon Ko,Donghyuk LIM,Dasom PARK,Byoungjoo Yoo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-10.

Integrated circuit including standard cells and method of designing the same

Номер патента: EP4372798A3. Автор: Wootae Kim,Juyeon KIM,Jungho DO,Seungyoung Lee,Jisu YU,Hyeongyu You. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-17.

Asymmetric nand gate circuit, clock gating cell and integrated circuit including the same

Номер патента: EP4366170A3. Автор: Byounggon Kang,Dalhee Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-31.

Standard cell libraries and integrated circuit including standard cells

Номер патента: US20090212327A1. Автор: Ha-young Kim,Sang-Jin Cheong. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2009-08-27.

Touch screen controller, touch screen driving circuit including the same and touch screen system

Номер патента: US20210397327A1. Автор: Changju Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-12-23.

Touch screen controller, touch screen driving circuit including the same and touch screen system

Номер патента: US20230050409A1. Автор: Changju Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-02-16.

Power supply semiconductor integrated circuit including a short-circuit-fault detection circuit that detects a short circuit of the voltage-output terminal

Номер патента: US11768510B2. Автор: Kohei Sakurai,Shinichiro Maki. Владелец: Mitsumi Electric Co Ltd. Дата публикации: 2023-09-26.

Source driver, display driving circuit including the source driver, and method of operating the source driver

Номер патента: US20240282269A1. Автор: Yonghun Kim,Junkwan PARK,Yongim LEE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-08-22.

Logic circuit including combined pass transistor and CMOS circuits and a method of synthesizing the logic circuit

Номер патента: US20020180486A1. Автор: Kazuo Yano,Shunzo Yamashita. Владелец: Individual. Дата публикации: 2002-12-05.

Reset signal generating circuit and semiconductor integrated circuit including the same

Номер патента: US20130069698A1. Автор: Masaya Fukazawa. Владелец: Renesas Electronics Corp. Дата публикации: 2013-03-21.

Touch screen controller, touch screen driving circuit including the same and touch screen system

Номер патента: US12086361B2. Автор: Changju Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-09-10.

Switching circuit including wire traces to reduce the magnitude of voltage and current oscillations

Номер патента: US09990457B2. Автор: Masanori Ishigaki,Ercan M. Dede,Danny J. LOHAN. Владелец: Toyota Motor Engineering and Manufacturing North America Inc. Дата публикации: 2018-06-05.

Display drive circuit including an output terminal

Номер патента: US09799265B2. Автор: Atsushi Hirama. Владелец: Lapis Semiconductor Co Ltd. Дата публикации: 2017-10-24.

Color display device with pixel circuits including two capacitors

Номер патента: US09734762B2. Автор: Noboru Noguchi,Noritaka Kishi,Masanori Ohara,Shigetsugu Yamanaka. Владелец: Sharp Corp. Дата публикации: 2017-08-15.

Pixel driving circuit including signal splitting circuits, driving method, display panel, and display device

Номер патента: US09613555B2. Автор: Jianfeng Yuan,Huabin Chen. Владелец: Beijing BOE Display Technology Co Ltd. Дата публикации: 2017-04-04.

Display drive circuit including an output terminal

Номер патента: US09589501B2. Автор: Atsushi Hirama. Владелец: Lapis Semiconductor Co Ltd. Дата публикации: 2017-03-07.

SEMICONDUCTOR DEVICE INCLUDING FERROELECTRIC MATERIAL, NEUROMORPHIC CIRCUIT INCLUDING THE SEMICONDUCTOR DEVICE, AND NEUROMORPHIC COMPUTING APPARATUS INCLUDING THE NEUROMORPHIC CIRCUIT

Номер патента: US20210036024A1. Автор: Kim Sangwook,HEO Jinseong,LEE Yunseong,JO Sanghyun. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2021-02-04.

MEMORY CONTROLLERS INCLUDING TEST MODE ENGINES AND METHODS FOR REPAIR OF MEMORY OVER BUSSES USED DURING NORMAL OPERATION OF THE MEMORY

Номер патента: US20140258780A1. Автор: Eyres Dean C.. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2014-09-11.

Visual and Audio Warning System Including Test Ledger for Automated Door

Номер патента: US20160284175A1. Автор: Williams Daniel R.,Finn Clayton L.. Владелец: . Дата публикации: 2016-09-29.

Monitoring circuit including cascaded s-boxes for fault injection attack protection

Номер патента: US11449606B1. Автор: Sudhir Satpathy,Wojciech Stefan Powiertowski,Nagendra Gupta Modadugu,Neeraj UPASANI. Владелец: Facebook Technologies LLC. Дата публикации: 2022-09-20.

Display device including test unit

Номер патента: CN107818968B. Автор: 郭源奎,贾智铉,裵汉成. Владелец: Samsung Display Co Ltd. Дата публикации: 2023-01-24.

Display device including test circuit and electronic apparatus having the display device

Номер патента: US7570072B2. Автор: Akihiro Kimura,Tomoyuki Iwabuchi,Shuhei Nagatsuka,Yuki HATA. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2009-08-04.

Transferring instructions into DSP memory including testing instructions to determine if they are to be processed by an instruction interpreter or a first kernel

Номер патента: US5724534A. Автор: Marie Goude,Alain Boursier,Louis Giron. Владелец: US Philips Corp. Дата публикации: 1998-03-03.

Visual and audio warning system including test ledger for automated door

Номер патента: WO2013006848A3. Автор: Clayton L. FINN,Daniel R. WILLIAMS. Владелец: Williams Daniel R. Дата публикации: 2013-09-26.

Buffer circuit including offset blocking circuit and display device including the same

Номер патента: US11955090B2. Автор: Sungho Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-04-09.

Reverse polish notation device for handling tables, and electronic integrated circuit including such a processing device

Номер патента: US20070226461A1. Автор: Frédéric Demange,Sylvain Garnier,Mickael Le Dily. Владелец: Atmel Nantes SA. Дата публикации: 2007-09-27.

Semiconductor devices and display driver integrated circuits including the semiconductor devices

Номер патента: US20200303303A1. Автор: Myoung Soo Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-09-24.

Semiconductor package including test pad and bonding pad structure for die connection and methods for forming the same

Номер патента: US12094844B2. Автор: Jen-Yuan Chang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-17.

Semiconductor Package Including Test Pad and Bonding Pad Structure for Die Connection and Methods for Forming the Same

Номер патента: US20240363565A1. Автор: Jen-Yuan Chang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-31.

Semiconductor Package Including Test Pad and Bonding Pad Structure for Die Connection and Methods for Forming the Same

Номер патента: US20230343736A1. Автор: Jen-Yuan Chang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-10-26.

Integrated circuit including test portion and method for making

Номер патента: US4413271A. Автор: James F. Mayrand,Walter S. Gontowski, Jr.. Владелец: Sprague Electric Co. Дата публикации: 1983-11-01.

Semiconductor component having test pads and method and apparatus for testing same

Номер патента: US20070218573A1. Автор: Jae Cho,Xin Wu,Chih-Chung Wu,Mohsen Mardi,Shih-Liang Liang,Sanjiv Stokes,Hassan Bazargan. Владелец: Xilinx Inc. Дата публикации: 2007-09-20.

Semiconductor chip with solder cap probe test pads

Номер патента: US20210066144A1. Автор: Lei Fu,Milind S. Bhagavat,Chia-Hao Cheng. Владелец: Advanced Micro Devices Inc. Дата публикации: 2021-03-04.

Method of handling test pad and method of fabricating semiconductor device

Номер патента: US20230395440A1. Автор: Jun Zhou,Sheng Hu,Qiong Zhan. Владелец: Wuhan Xinxin Semiconductor Manufacturing Co Ltd. Дата публикации: 2023-12-07.

Semiconductor device with bond pad and test pad

Номер патента: EP1145302A1. Автор: Harvey F. Dickinson. Владелец: KONINKLIJKE PHILIPS ELECTRONICS NV. Дата публикации: 2001-10-17.

Embedded sige epitaxy test pad

Номер патента: US20160225678A1. Автор: Jun Tan,Haifeng Zhou. Владелец: Shanghai Huali Microelectronics Corp. Дата публикации: 2016-08-04.

Test pad with crack stop protection

Номер патента: US20200357707A1. Автор: Juan Boon Tan,Wanbing YI,Ramasamy Chockalingam. Владелец: GLOBALFOUNDRIES SINGAPORE PTE LTD. Дата публикации: 2020-11-12.

Mechanical attachment of test pads to a diagnostic test device

Номер патента: US20160310951A1. Автор: William Pat Price,Ted Titmus. Владелец: Individual. Дата публикации: 2016-10-27.

Method for fabricating semiconductor device with test pad

Номер патента: US11749598B2. Автор: Tse-Yao Huang. Владелец: Nanya Technology Corp. Дата публикации: 2023-09-05.

Semiconductor package with electrical test pads

Номер патента: US20170323834A1. Автор: Federico Giovanni Ziglioli. Владелец: STMICROELECTRONICS SRL. Дата публикации: 2017-11-09.

Semiconductor structure with testing pads and method of manufacturing thereof

Номер патента: US20240170349A1. Автор: Hsiang-Tai Lu,Kuo Wen Chen,Chih-Hsuan Tai,Yu-Wei Chiu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-05-23.

Integrated circuits including LDMOS transistor structures and methods for fabricating LDMOS transistor structures

Номер патента: US09793394B1. Автор: Ming Zhu,Pinghui Li,Yiang Aun Nga,Shi Ya Phyllis Lim. Владелец: GLOBALFOUNDRIES SINGAPORE PTE LTD. Дата публикации: 2017-10-17.

Integrated circuit including a dummy gate structure and method for the formation thereof

Номер патента: US09793372B1. Автор: Jan Hoentschel,Sven Beyer,Elliot John Smith,Nigel Chan. Владелец: Globalfoundries Inc. Дата публикации: 2017-10-17.

Reference buffer circuits including a non-linear feedback factor

Номер патента: US09614528B2. Автор: Shouli Yan,Mohamed Mostafa Elsayed. Владелец: Silicon Laboratories Inc. Дата публикации: 2017-04-04.

Three dimensional circuit including shielded inductor and method of forming same

Номер патента: US09548267B2. Автор: Sa-Lly Liu,Ming Hsien Tsai,Tzu-Jin Yeh,Fu-Lung Hsueh,Chewn-Pu Jou,Hsieh-Hung HSIEH. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-01-17.

Integrated circuits including inductors

Номер патента: US09412805B2. Автор: Hsiu-Ying Cho. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-08-09.

Method of managing electronic circuit including thermal protection device and corresponding electronic circuit

Номер патента: RU2672568C2. Автор: Анжело ПАСКАЛЕТТО,Жан-Мари КЭНТЭН. Владелец: Континенталь Отомотив Франс. Дата публикации: 2018-11-16.

Integrated circuit including integrated standard cell structure

Номер патента: US20210134837A1. Автор: Ji Su YU,Jin Young Lim,Hyeon Gyu YOU,Gi Young Yang,In Gyum KIM,Hak Chul JUNG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-05-06.

Integrated circuit including back-side wiring and a method of designing the same

Номер патента: US20240243038A1. Автор: Jaehyun LIM,Taehyung Kim,Hoyoung Tang,Eojin LEE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-18.

Integrated circuit including backside wiring

Номер патента: EP4404263A2. Автор: Minjae Jeong,Jungho DO,Seungyoung Lee,Jisu YU,Hyeongyu You. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-24.

Integrated circuit including gate-all-around transistor

Номер патента: US12046653B2. Автор: Taehyung Kim,SangShin Han,Bonyeop KIM,Sangyeop BAECK. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-23.

Charger integrated circuit including switching converter and electronic device including the charger integrated circuit

Номер патента: US20240235368A1. Автор: Sungwoo Moon,Sungwoo Lee,Daewoong CHO,Jungwook HEO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-11.

Exciter drive circuit including configurable flyback unit with fast energy field collapse

Номер патента: US20180019691A1. Автор: Adrian E. Vandergrift. Владелец: Hamilton Sundstrand Corp. Дата публикации: 2018-01-18.

Integrated circuit including gate-all-around transistor

Номер патента: US20240332390A1. Автор: Taehyung Kim,SangShin Han,Bonyeop KIM,Sangyeop BAECK. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-10-03.

Physically unclonable function circuit including memory elements

Номер патента: US09762241B1. Автор: James W. Tschanz,Charles Augustine,Carlos Tokunaga,Suriya Ashok Kumar. Владелец: Intel Corp. Дата публикации: 2017-09-12.

Imaging circuit including frame asynchronous pulse detection

Номер патента: US09641781B2. Автор: Minlong Lin,Joshua Lund. Владелец: Hamilton Sundstrand Corp. Дата публикации: 2017-05-02.

Motor vehicle circuit protection device and motor vehicle circuit including the same

Номер патента: US20220069569A1. Автор: Che-Hung Lin,Chia-Chun Yu. Владелец: JUTE INDUSTRIAL Co Ltd. Дата публикации: 2022-03-03.

Integrated circuit including integrated standard cell structure

Номер патента: US20240243134A1. Автор: Ji Su YU,Jin Young Lim,Hyeon Gyu YOU,Gi Young Yang,In Gyum KIM,Hak Chul JUNG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-18.

Integrated circuit including guard-ring and method of designing the same

Номер патента: US20240153889A1. Автор: Seungkwon Lee,Hankyung Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-05-09.

Integrated circuit including backside wiring and method of designing the same

Номер патента: US20240250028A1. Автор: Minjae Jeong,Jungho DO,Seungyoung Lee,Jisu YU,Hyeongyu You. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-25.

Integrated circuit including backside wiring pattern

Номер патента: US20240266290A1. Автор: Byounggon Kang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-08-08.

Iintegrated circuit including backside wiring and method of manufacturing the integrated circuit

Номер патента: US20240290692A1. Автор: Minjae Jeong,Jungho DO,Jisu YU. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-08-29.

Cascode power amplification circuits, including voltage protection circuits

Номер патента: WO2023150259A1. Автор: Hui Liu,Baker Scott,George Maxim,Stephen James Franck. Владелец: QORVO US, INC.. Дата публикации: 2023-08-10.

Integrated circuit including a passive component in an interconnection part, and corresponding manufacturing method

Номер патента: US20240178053A1. Автор: Houssein EL DIRANI,Marouane Mastari,Mohamed Ali Nsibi. Владелец: STMicroelectronics France SAS. Дата публикации: 2024-05-30.

Delay circuit and electronic circuit including delay circuit

Номер патента: US20060214715A1. Автор: Hajime Takashima. Владелец: Sanyo Electric Co Ltd. Дата публикации: 2006-09-28.

Integrated circuits with diffusion barrier layers and processes for preparing integrated circuits including diffusion barrier layers

Номер патента: US20160056253A1. Автор: Hoon Kim,Rohit Galatage. Владелец: Globalfoundries Inc. Дата публикации: 2016-02-25.

Integrated circuit including a combined logic cell

Номер патента: US20230061062A1. Автор: Badarish Mohan Subbannavar,Rakesh DIMRI,Mohammad Asif Farooqui,Somasekar J. Владелец: Texas Instruments Inc. Дата публикации: 2023-03-02.

Integrated circuit including backside wiring and method of designing the integrated circuit

Номер патента: EP4432357A1. Автор: Dalhee Lee,Sangjung Jeon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-09-18.

Logic circuits including circuits of different heights and related method of fabrication

Номер патента: US20240321861A1. Автор: Haining Yang,Hyunwoo Park,Junjing Bao,Ming-Huei Lin. Владелец: Qualcomm Inc. Дата публикации: 2024-09-26.

Integrated circuit including backside contact and method of designing the integrated circuit

Номер патента: US20240363532A1. Автор: Jungho DO,Seungyoung Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-10-31.

Integrated circuit including a first semiconductor wafer and a second semiconductor wafer, semiconductor device including a first semiconductor wafer and a second semiconductor wafer and method of manufacturing same

Номер патента: US12062641B2. Автор: Fong-Yuan Chang,Chin-Chou Liu,Po-Hsiang Huang,Chih-Lin Chen,Hui-Yu Lee. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-13.

Internal voltage trimming device and semiconductor integrated circuit including the same

Номер патента: US09929644B2. Автор: Jun-Young Park,Ji-Sung Kim,Se-eun OH,Hyeon-seong IM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-03-27.

Resonant circuit including bump pads

Номер патента: US09929123B2. Автор: Cemin Zhang,John A. Chiesa. Владелец: Analog Devices Inc. Дата публикации: 2018-03-27.

Methods of making integrated circuits including conductive structures through substrates

Номер патента: US09773701B2. Автор: Ku-Feng Yang,Wen-Chih Chiou,Yuan-Hung Liu,Hsin-Yu Chen,Tsang-Jiuh Wu,Ming-Tsu Chung,Pei-Ching Kuo. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-09-26.

Hybrid circuit including a tunnel field-effect transistor

Номер патента: US09748271B2. Автор: Brent A. Anderson,Edward J. Nowak,Tamilmani Ethirajan. Владелец: International Business Machines Corp. Дата публикации: 2017-08-29.

Integrated circuits including magnetic tunnel junctions for magnetoresistive random-access memory and methods for fabricating the same

Номер патента: US09691971B2. Автор: Hyun-Jin Cho,Ming He,Craig CHILD,Seowoo Nam. Владелец: Globalfoundries Inc. Дата публикации: 2017-06-27.

Low leakage dual STI integrated circuit including FDSOI transistors

Номер патента: US09601511B2. Автор: Qing Liu,Kangguo Cheng,Ali Khakifirooz,Laurent Grenouillet,Maud Vinet,Bruce Doris,Yannick Le Tiec. Владелец: STMicroelectronics lnc USA. Дата публикации: 2017-03-21.

Dual STI integrated circuit including FDSOI transistors and method for manufacturing the same

Номер патента: US09570465B2. Автор: Qing Liu,Kangguo Cheng,Ali Khakifirooz,Laurent Grenouillet,Maud Vinet,Bruce Doris,Yannick Le Tiec. Владелец: STMicroelectronics lnc USA. Дата публикации: 2017-02-14.

Integrated circuits including magnetic devices

Номер патента: US09559679B2. Автор: Anthony J. Stratakos,Alexandr Ikriannikov,Andrew J. Burstein. Владелец: Volterra Semiconductor LLC. Дата публикации: 2017-01-31.

Integrated circuits with diffusion barrier layers and processes for preparing integrated circuits including diffusion barrier layers

Номер патента: US09484449B2. Автор: Hoon Kim,Rohit Galatage. Владелец: Globalfoundries Inc. Дата публикации: 2016-11-01.

Analog-digital converting circuit including comparator, and image sensor including the analog-digital converting circuit

Номер патента: US20240048870A1. Автор: Heesung Chae,Sunyool Kang,Yunhwan Jung,Yongjun CHO,Haesick Sul. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-02-08.

Analog-digital converting circuit including comparator, and image sensor including the analog-digital converting circuit

Номер патента: EP4319179A1. Автор: Heesung Chae,Sunyool Kang,Yunhwan Jung,Yongjun CHO,Haesick Sul. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-02-07.

Integrated circuit including phase locked loop circuit

Номер патента: US20200021298A1. Автор: Woo Seok Kim,Tae Ik Kim,Gyu Sik Kim,Hwan Seok YEO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-01-16.

Apparatus and circuits including transistors with different threshold voltages and methods of fabricating the same

Номер патента: US20200135722A1. Автор: Chan-Hong Chern. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-04-30.

Integrated circuit including a capacitive structure of the metal-insulator-metal type and corresponding manufacturing method

Номер патента: US12021074B2. Автор: Pascal Fornara,Roberto Simola. Владелец: STMICROELECTRONICS ROUSSET SAS. Дата публикации: 2024-06-25.

Integrated electronic circuit including non-linear devices

Номер патента: US20030058024A1. Автор: Maurizio Zuffada,Martin Hassner,Giorgio Betti,Francesco Chrappan Soldavini. Владелец: STMICROELECTRONICS SRL. Дата публикации: 2003-03-27.

Sub-sampling phase locked loop with compensated loop bandwidth and integrated circuit including the same

Номер патента: US11962311B2. Автор: Seunghyun Oh,Seungjin Kim,Gyusik Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-04-16.

Integrated circuit including transistors and a method of manufacturing the same

Номер патента: US20220393032A1. Автор: Sangwook Kim,Yunseong LEE,Jinseong Heo,Sanghyun JO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-12-08.

Integrated electronic circuit including non-linear inductor devices

Номер патента: US20030058025A1. Автор: Maurizio Zuffada,Martin Hassner,Giorgio Betti,Francesco Chrappan Soldavini. Владелец: STMICROELECTRONICS SRL. Дата публикации: 2003-03-27.

Apparatus and circuits including transistors with different polarizations and methods of fabricating the same

Номер патента: US20220130989A1. Автор: Chan-Hong Chern. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-04-28.

Apparatus and circuits including transistors with different polarizations and methods of fabricating the same

Номер патента: US20200161463A1. Автор: Chan-Hong Chern. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-05-21.

Integrated circuit including transistors and a method of manufacturing the same

Номер патента: US20240274714A1. Автор: Sangwook Kim,Yunseong LEE,Jinseong Heo,Sanghyun JO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-08-15.

Hydraulic circuit including hydraulic decompression energy reclamation

Номер патента: US12055167B2. Автор: Reiner Knoell,Oliver GERHARD,Royce Gerngross,Jim E. Diehl. Владелец: Bosch Rexroth Corp. Дата публикации: 2024-08-06.

Integrated circuit including memory element with spatially stable material

Номер патента: US20090050870A1. Автор: Thomas Happ,Bernhard Ruf,Petra Majewski,Dieter Andres. Владелец: Qimonda AG. Дата публикации: 2009-02-26.

Apparatus and circuits including transistors with different threshold voltages and methods of fabricating the same

Номер патента: US20240274599A1. Автор: Chan-Hong Chern. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-15.

Integrated circuit including a capacitive structure of the metal-insulator-metal type and corresponding manufacturing method

Номер патента: US20240312977A1. Автор: Pascal Fornara,Roberto Simola. Владелец: STMICROELECTRONICS ROUSSET SAS. Дата публикации: 2024-09-19.

Hydraulic circuit including hydraulic decompression energy reclamation

Номер патента: CA3136973A1. Автор: Reiner Knoell,Oliver GERHARD,Royce Gerngross,Jim Diehl. Владелец: ROBERT BOSCH GMBH. Дата публикации: 2022-04-30.

Error correction code (ecc) circuit including low-density parity-check decoder in adaptive operation mode, operating method of the ecc circuit, and memory controller including the ecc circuit

Номер патента: US20240356565A1. Автор: Dongmin Shin,Kangseok Lee,Youngjun Hwang,Bohwan Jun. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-10-24.

Error correction code (ecc) circuit including low-density parity-check decoder in adaptive operation mode, operating method of the ecc circuit, and memory controller including the ecc circuit

Номер патента: EP4456436A1. Автор: Dongmin Shin,Kangseok Lee,Youngjun Hwang,Bohwan Jun. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-10-30.

Electric power conversion circuit including switches and bootstrap circuits, and electric power transmission system including electric power conversion circuit

Номер патента: US09923486B2. Автор: Atsushi Yamamoto,Shoichi Hara,Taiki Nishimoto. Владелец: Panasonic Intellectual Property Management Co Ltd. Дата публикации: 2018-03-20.

Integrated circuit including lateral insulated gate field effect transistor

Номер патента: US09899367B2. Автор: Kai Esmark,Donald Dibra,Yiqun Cao. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2018-02-20.

Transistor package, amplification circuit including the same, and method of forming transistor

Номер патента: US09853605B2. Автор: Kazumi Shiikuma. Владелец: NEC Corp. Дата публикации: 2017-12-26.

Protection mode control circuit, switch control circuit including the protection mode control circuit and power supply device including the switch control circuit

Номер патента: US09825453B2. Автор: Ji-hoon Jang,Won-Tae Lee,Hang-Seok Choi,Hyeong Seok BAEK. Владелец: Fairchild Korea Semiconductor Ltd. Дата публикации: 2017-11-21.

Modulation mode control circuit, switch control circuit including the modulation mode control circuit and power supply device including the switch control circuit

Номер патента: US09812856B2. Автор: Ji-hoon Jang,Won-Tae Lee,Hyeong Seok BAEK. Владелец: Fairchild Korea Semiconductor Ltd. Дата публикации: 2017-11-07.

Circuit including semiconductor device with multiple individually biased space-charge control electrodes

Номер патента: US09647076B2. Автор: Michael Shur,Remigijus Gaska,Grigory Simin. Владелец: Sensor Electronic Technology Inc. Дата публикации: 2017-05-09.

Phase-locked loop circuit including voltage down converter consisting of passive element

Номер патента: US09467155B2. Автор: Heechai Kang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-10-11.

Power converter circuits including high electron mobility transistors for switching and rectification

Номер патента: US09467038B2. Автор: Robert Joseph Callanan. Владелец: Cree Inc. Дата публикации: 2016-10-11.

Apparatuses, methods, and circuits including a duty cycle adjustment circuit

Номер патента: US09413338B2. Автор: Yantao Ma. Владелец: Micron Technology Inc. Дата публикации: 2016-08-09.

Signal combining circuit, signal processing circuit including the signal combining circuit,stereophonic audio reproduction system including the signal processing circuit, and an audio-visual reproduction system including the stereophonic audio reproduction system

Номер патента: MY112795A. Автор: Maria Aarts Ronaldus. Владелец: KONINKLIJKE PHILIPS ELECTRONICS NV. Дата публикации: 2001-09-29.

Integrated circuits including a FinFET and a nanostructure FET

Номер патента: US10439039B2. Автор: Kern Rim,Stanley Seungchul SONG,Jeffrey Junhao XU,Choh fei Yeap. Владелец: Qualcomm Inc. Дата публикации: 2019-10-08.

Current steering dac, a video adapter including a current steering dac, and a video circuit including a current steering dac

Номер патента: US20140063348A1. Автор: Rene Verlinden. Владелец: NXP BV. Дата публикации: 2014-03-06.

Three dimensional circuit including shielded inductor and method of forming same

Номер патента: US20150249051A1. Автор: Sa-Lly Liu,Ming Hsien Tsai,Tzu-Jin Yeh,Fu-Lung Hsueh,Chewn-Pu Jou,Hsieh-Hung HSIEH. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2015-09-03.

Ldmos transistor structures and integrated circuits including ldmos transistor structures

Номер патента: US20180053842A1. Автор: Ming Zhu,Pinghui Li,Yiang Aun Nga,Shi Ya Phyllis Lim. Владелец: GLOBALFOUNDRIES SINGAPORE PTE LTD. Дата публикации: 2018-02-22.

Integrated circuit including resonant circuit

Номер патента: US11843351B2. Автор: Lei Lu,Qing MIN,Jichao HUANG. Владелец: Huawei Technologies Co Ltd. Дата публикации: 2023-12-12.

Integrated circuit including standard cells and method of designing the same

Номер патента: US20240128257A1. Автор: Taejun Yoo,WooKyu Kim,Byounggon Kang,Dalhee Lee,Changbeom Kim,Minjung PARK. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-04-18.

Reference Buffer Circuits Including a Non-linear Feedback Factor

Номер патента: US20160164522A1. Автор: Shouli Yan,Mohamed Mostafa Elsayed. Владелец: Silicon Laboratories Inc. Дата публикации: 2016-06-09.

Integrated circuit including resonant circuit

Номер патента: US20210297043A1. Автор: Lei Lu,Qing MIN,Jichao HUANG. Владелец: Huawei Technologies Co Ltd. Дата публикации: 2021-09-23.

Method for fabricating enhancement mode transistor material, enhancement mode transistor material fabricated thereby, enhancement mode transistor including the same, and amplifying circuit including the same

Номер патента: US20240068120A1. Автор: Tae Il Kim,Young Jin Jo,Seung Hwan CHOY. Владелец: Sungkyunkwan University Research and Business Foundation. Дата публикации: 2024-02-29.

Level shifter and driving circuit including the same

Номер патента: US7893730B2. Автор: Sang-Hwa Jung,Han-Seung Lee. Владелец: Silicon Mitus Inc. Дата публикации: 2011-02-22.

Optimization system and method for integrated circuits including multi-phase level-sensitive latches

Номер патента: WO2018132131A1. Автор: Bao Liu. Владелец: Bao Liu. Дата публикации: 2018-07-19.

Photosensor circuits including a switch mode power converter

Номер патента: CA2741444C. Автор: Richard Charles Flaherty. Владелец: Tyco Electronics Corp. Дата публикации: 2017-12-12.

Inverter circuit including short circuit protected composite switch

Номер патента: EP2765605A1. Автор: Michael A. Briere. Владелец: International Rectifier Corp USA. Дата публикации: 2014-08-13.

Spiral coil and wireless power transmission and reception circuit including the same

Номер патента: US11862382B2. Автор: Seong-Min Kim,Sang-Won Kim,Gwangzeen Ko,Jung Ick Moon,In Kui Cho. Владелец: Electronics and Telecommunications Research Institute ETRI. Дата публикации: 2024-01-02.

Integrated circuit including static random access memory device

Номер патента: US20230389258A1. Автор: Tae-hyung Kim,Dae Young Moon,Eo Jin LEE,Ho Young TANG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-11-30.

Demodulation circuit including error correction

Номер патента: US6173020B1. Автор: Osami Nishimura. Владелец: NEC Corp. Дата публикации: 2001-01-09.

Integrated circuit including a body transistor and method

Номер патента: US20090261411A1. Автор: Dongping Wu. Владелец: Qimonda AG. Дата публикации: 2009-10-22.

Integrated circuit including gate-all-around transistor

Номер патента: US20220140099A1. Автор: Taehyung Kim,SangShin Han,Bonyeop KIM,Sangyeop BAECK. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-05-05.

Method for Manufacturing an Integrated Circuit Including a Lateral Trench Transistor and a Logic Circuit Element

Номер патента: US20170301791A1. Автор: Till Schloesser,Andreas Meiser,Detlef Weber,Karl-Heinz Gebhardt. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2017-10-19.

Integrated circuits including integrated standard cell structure

Номер патента: US11810920B2. Автор: Seung Young Lee,Jae-Ho Park,Sanghoon Baek,Ji Su YU,Hyeon Gyu YOU,Seung Man LIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-11-07.

Integrated circuit including standard cell with a metal layer having a pattern and method of manufacturing the same

Номер патента: US20240128159A1. Автор: Minjae Jeong,Jungho DO,Seungyoung Lee,Jaehee Cho,Jisu YU,Geonwoo Nam,Hyeongyu You. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-04-18.

Vehicle coolant circuits including jet manifolds

Номер патента: US11873785B1. Автор: Chung Y. Wei,Jeffery J Milton. Владелец: GM GLOBAL TECHNOLOGY OPERATIONS LLC. Дата публикации: 2024-01-16.

Integrated circuits including coil circuit and SCR

Номер патента: US11901353B2. Автор: Ming-Dou Ker,Chun-Yu Lin,Wei-Min Wu,Li-Wei Chu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-02-13.

Switch control circuit including multipin to set dead time information and/or protection mode

Номер патента: US20190157965A1. Автор: Hang-Seok Choi. Владелец: Semiconductor Components Industries LLC. Дата публикации: 2019-05-23.

Integrated circuit including bipolar transistors

Номер патента: US20190312088A1. Автор: Philippe Boivin,Olivier Weber,Emmanuel Petitprez,Emeline Souchier,Jean Jacques FAGOT. Владелец: Commissariat a lEnergie Atomique et aux Energies Alternatives CEA. Дата публикации: 2019-10-10.

Integrated circuit including bipolar transistors

Номер патента: US20220020816A1. Автор: Philippe Boivin,Olivier Weber,Emmanuel Petitprez,Emeline Souchier,Jean Jacques FAGOT. Владелец: STMicroelectronics Crolles 2 SAS. Дата публикации: 2022-01-20.

Integrated circuit including bipolar transistors

Номер патента: US11152430B2. Автор: Philippe Boivin,Olivier Weber,Emmanuel Petitprez,Emeline Souchier,Jean Jacques FAGOT. Владелец: STMicroelectronics Crolles 2 SAS. Дата публикации: 2021-10-19.

Communication circuit including amplifier module, and electronic device comprising same

Номер патента: US20230327612A1. Автор: John Moon,Dongil YANG,Yongjun An,Hyoseok NA. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-10-12.

Integrated circuit including standard cell and filler cell

Номер патента: US11948932B2. Автор: Jaewoo SEO,Giyoung Yang,Ingyum Kim,Hakchul JUNG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-04-02.

Tunable circuit including integrated filter circuit coupled to variable capacitance, and related integrated circuit (IC) packages and fabrication methods

Номер патента: US11770115B2. Автор: Wei Cheng,Changhan Hobie Yun,Paragkumar Ajaybhai Thadesar,Daniel Daeik Kim,Nosun Park,Hannu Laurila,Ville Lehtisalo,Ville Herman Brunou. Владелец: Qualcomm Inc. Дата публикации: 2023-09-26.

Integrated circuit including backside wiring and method of designing the same

Номер патента: US20240120258A1. Автор: Taehyung Kim,Hoyoung Tang,Yunsick Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-04-11.

Spiral coil and wireless power transmission and reception circuit including the same

Номер патента: US20230317356A1. Автор: Seong-Min Kim,Sang-Won Kim,Gwangzeen Ko,Jung Ick Moon,In Kui Cho. Владелец: Electronics and Telecommunications Research Institute ETRI. Дата публикации: 2023-10-05.

Integrated circuit including ferroelectric memory cells and methods for manufacturing

Номер патента: US20180233573A1. Автор: James Lin,Francesco Anthony Annetta. Владелец: Individual. Дата публикации: 2018-08-16.

Integrated circuit including integrated standard cell structure

Номер патента: US11973081B2. Автор: Ji Su YU,Jin Young Lim,Hyeon Gyu YOU,Gi Young Yang,In Gyum KIM,Hak Chul JUNG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-04-30.

Integrated circuit including backside wiring and method of designing the same

Номер патента: EP4350762A1. Автор: Taehyung Kim,Hoyoung Tang,Yunsick Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-04-10.

Phase locked loop circuit including digital voltage-controlled oscillator, ring oscillator and selector

Номер патента: US20080211589A1. Автор: Masaki Sano. Владелец: NEC Electronics Corp. Дата публикации: 2008-09-04.

Integrated Circuit Including a Power Transistor and an Auxiliary Transistor

Номер патента: US20130140616A1. Автор: Anton Mauder,Hans-Joachim Schulze,Frank Pfirsch. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2013-06-06.

Integrated circuit including transistors having a common base

Номер патента: US11882707B2. Автор: Philippe Boivin. Владелец: Stmicroelectro Rousset Sas. Дата публикации: 2024-01-23.

Integrated circuit including bipolar transistors

Номер патента: US11818901B2. Автор: Philippe Boivin,Olivier Weber,Emmanuel Petitprez,Emeline Souchier,Jean Jacques FAGOT. Владелец: STMicroelectronics Crolles 2 SAS. Дата публикации: 2023-11-14.

Integrated circuit including standard cell and filler cell

Номер патента: US20240203973A1. Автор: Jaewoo SEO,Giyoung Yang,Ingyum Kim,Hakchul JUNG. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2024-06-20.

Integrated circuit including supervia and method of making

Номер патента: US20240021516A1. Автор: Wei-Cheng Lin,Jiann-Tyng Tzeng,Kam-Tou SIO. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-01-18.

Tunable circuit including integrated filter circuit coupled to variable capacitance, and related integrated circuit (ic) packages and fabrication methods

Номер патента: EP4229754A1. Автор: Wei Cheng,Changhan Hobie Yun,Paragkumar Ajaybhai Thadesar,Daniel Daeik Kim,Nosun Park,Hannu Laurila,Ville Lehtisalo,Ville Herman Brunou. Владелец: Qualcomm Inc. Дата публикации: 2023-08-23.

Tunable circuit including integrated filter circuit coupled to variable capacitance, and related integrated circuit (ic) packages and fabrication methods

Номер патента: WO2022081313A1. Автор: Wei Cheng,Changhan Hobie Yun,Paragkumar Ajaybhai Thadesar,Daniel Daeik Kim,Nosun Park,Hannu Laurila,Ville Lehtisalo,Ville Herman Brunou. Владелец: QUALCOMM INCORPORATED. Дата публикации: 2022-04-21.

Scalable power supply circuit including protection features

Номер патента: WO2014134612A2. Автор: Victor Simi. Владелец: OSRAM SYLVANIA INC.. Дата публикации: 2014-09-04.

Integrated circuit including transistors having a common base

Номер патента: US20190312087A1. Автор: Philippe Boivin. Владелец: STMICROELECTRONICS ROUSSET SAS. Дата публикации: 2019-10-10.

Integrated circuit including transistors having a common base

Номер патента: US20220115441A1. Автор: Philippe Boivin. Владелец: STMICROELECTRONICS ROUSSET SAS. Дата публикации: 2022-04-14.

Integrated circuit including transistors having a common base

Номер патента: US11211428B2. Автор: Philippe Boivin. Владелец: STMICROELECTRONICS ROUSSET SAS. Дата публикации: 2021-12-28.

Integrated circuit including filter circuit arrangement

Номер патента: US20090167426A1. Автор: Elmar Bach,Stefan Hermann Groiss. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2009-07-02.

Communication within an integrated circuit including an array of interconnected programmable logic elements

Номер патента: WO2010079326A3. Автор: Stephen John Hill,Michael Peter Muller. Владелец: ARM LIMITED. Дата публикации: 2010-09-02.

Semiconductor integrated circuit including internal circuits and electrostatic discharge protection circuits

Номер патента: US20110310515A1. Автор: Hirofumi Hayashi. Владелец: Renesas Electronics Corp. Дата публикации: 2011-12-22.

Amplifying circuit and analog-digital converting circuit including same

Номер патента: US20110234440A1. Автор: Takumi DANJO. Владелец: Fujitsu Ltd. Дата публикации: 2011-09-29.

Scan flip-flop circuits and scan test circuits including the same

Номер патента: US20130241594A1. Автор: Bai-Sun Kong,Hoi-Jin Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2013-09-19.

Semiconductor circuit including flip-flop

Номер патента: US20170070214A1. Автор: Min-Su Kim,Matthew Berzins,San-Ha Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-03-09.

Communication within an integrated circuit including an array of interconnected programmable logic elements

Номер патента: WO2010079326A2. Автор: Stephen John Hill,Michael Peter Muller. Владелец: ARM LIMITED. Дата публикации: 2010-07-15.

Integrated circuit including backside wiring and method of designing the integrated circuit

Номер патента: US20240266344A1. Автор: WooKyu Kim,Seungmin Lee,Jungho DO,Changbeom Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-08-08.

Digital loop filter of low latency and low operation and clock data recovery circuit including the same

Номер патента: US12068752B2. Автор: Jaehyun Park,Seuk SON,Juyun LEE,Hyeonju Lee,Kangjik Kim,Sunggeun KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-08-20.

Integrated circuit including high-speed device

Номер патента: US20220399266A1. Автор: Jaehyun Park,Nakwon Lee,Kyeongjoon Ko,Junhan BAE,Gyeongseok SONG,Jongjae Ryu. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-12-15.

Low-noise amplifier circuit including band-stop filter

Номер патента: US20090108944A1. Автор: Chih-Hung Chen,Ming-Ching Kuo,Hsiao-Wen Kao. Владелец: Industrial Technology Research Institute ITRI. Дата публикации: 2009-04-30.

Integrated circuit including backside wiring and method of designing the integrated circuit

Номер патента: EP4415034A1. Автор: WooKyu Kim,Seungmin Lee,Jungho DO,Changbeom Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-08-14.

Method for producing an integrated circuit including a fuse element, a fuse-memory element or a resistor element

Номер патента: US20080029477A1. Автор: Georg Seidemann,Reinhard Goellner. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2008-02-07.

Apparatus and internal voltage generating circuit including voltage dividing circuit

Номер патента: US20240250021A1. Автор: Hidekazu Egawa,Kenichi Echigoya. Владелец: Micron Technology Inc. Дата публикации: 2024-07-25.

Bidirectional i/o circuit and integrated circuit including bidirectional i/o circuit

Номер патента: US20240178839A1. Автор: Jungho Kim,Wanchul KONG. Владелец: Key Foundry Co Ltd. Дата публикации: 2024-05-30.

Supply modulating circuit and communication circuit including the same

Номер патента: US20240356494A1. Автор: Dongsu Kim,Junsuk Bang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-10-24.

Charger circuit including a plurality of charging paths

Номер патента: US09973017B2. Автор: Ryotaro Kudo,Hyunseok Nam,Yus Ko,Gwang-yol NOH,Dongjin KEUM,Whanseok Seo,Jaeyoup Choi. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-05-15.

Semiconductor circuit including flip-flop

Номер патента: US09899990B2. Автор: Min-Su Kim,Matthew Berzins,San-Ha Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-02-20.

MEMS capacitive sensor biasing circuit including an integrated inductor

Номер патента: US09793802B2. Автор: John M. Muza. Владелец: ROBERT BOSCH GMBH. Дата публикации: 2017-10-17.

Phase shift circuit and dimming circuit including the same

Номер патента: US09781790B2. Автор: Youn-woong CHUNG. Владелец: Fairchild Korea Semiconductor Ltd. Дата публикации: 2017-10-03.

Integrated circuits including replacement gate structures and methods for fabricating the same

Номер патента: US09761691B2. Автор: Min-Hwa Chi,Xusheng Wu,Dong-woon Shin. Владелец: Globalfoundries Inc. Дата публикации: 2017-09-12.

Integrated circuits including dummy structures and methods of forming the same

Номер патента: US09646958B2. Автор: Chih-Sheng Chang,Chien-Hsun Wang,Hsien-Hui MENG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-05-09.

Integrated circuits including modified liners and methods for fabricating the same

Номер патента: US09613906B2. Автор: Xunyuan Zhang,Errol Todd Ryan. Владелец: Globalfoundries Inc. Дата публикации: 2017-04-04.

Integrated circuits including organic interlayer dielectric layers and methods for fabricating the same

Номер патента: US09576894B2. Автор: Sunil Kumar Singh,Xusheng Wu,Teck Jung Tang,Ravi Prakash Srivastava,Akshey Sehgal. Владелец: Globalfoundries Inc. Дата публикации: 2017-02-21.

Signal receiving circuits including termination resistance having adjustable resistance value, operating methods thereof, and storage devices therewith

Номер патента: US09571098B2. Автор: Sung-Ha Kim,Hwaseok Oh. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-02-14.

Methods for fabricating integrated circuits including back-end-of-the-line interconnect structures

Номер патента: US09553017B2. Автор: Xunyuan Zhang. Владелец: Globalfoundries Inc. Дата публикации: 2017-01-24.

Current-voltage conversion amplifier circuit including multiplier with a current offset removal unit and multi input amplifier

Номер патента: US09543907B2. Автор: JUNG Hee Suk,Min-hyung Cho,Young-Deuk Jeon,Chun-Gi LYUH,Yi-Gyeong KIM,Jong Pil IM. Владелец: Electronics and Telecommunications Research Institute ETRI. Дата публикации: 2017-01-10.

Integrated circuits including selectively deposited metal capping layers on copper lines and methods for fabricating the same

Номер патента: US09484252B2. Автор: Moosung Chae,Larry Zhao. Владелец: Globalfoundries Inc. Дата публикации: 2016-11-01.

Driver circuit including driver transistors with controlled body biasing

Номер патента: US09473135B2. Автор: Ravinder Kumar,Paras Garg,Rajesh Yadav,Saiyid Mohammad Irshad Rizvi. Владелец: STMicroelectronics International NV. Дата публикации: 2016-10-18.

Integrated circuits including FINFET devices with lower contact resistance and reduced parasitic capacitance and methods for fabricating the same

Номер патента: US09425319B2. Автор: Xiuyu Cai,Kangguo Cheng,Ali Khakifirooz,Ruilong Xie. Владелец: International Business Machines Corp. Дата публикации: 2016-08-23.

Drive circuit including connection path selection sections and voltage generation section

Номер патента: US09349937B2. Автор: Shuji Otsuka,Toshifumi Asanuma,Tadashi Kiyuna. Владелец: Seiko Epson Corp. Дата публикации: 2016-05-24.

Interface circuit and voltage-raising circuit including such a circuit

Номер патента: US5465069A. Автор: Stephane Bouvier,Marc Boiron. Владелец: US Philips Corp. Дата публикации: 1995-11-07.

Methods of making integrated circuits including air gaps around interconnect structures

Номер патента: US9147602B2. Автор: Chih-hao Chen,Chii-Ping Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2015-09-29.

Signal transmitting/receiving circuit including an impedance matching circuit

Номер патента: US8472894B2. Автор: Chia-Jun Chang,Po-Chih Wang. Владелец: Realtek Semiconductor Corp. Дата публикации: 2013-06-25.

Hybrid circuit including capacitive charge-transfer means

Номер патента: CA1157124A. Автор: David G. Agnew. Владелец: Northern Telecom Ltd. Дата публикации: 1983-11-15.

Counter circuit using Johnson-type counter and applied circuit including the same

Номер патента: US5321733A. Автор: Masaya Tamamura,Shinichi Shiotsu,Katsunobu Nomura. Владелец: Fujitsu Ltd. Дата публикации: 1994-06-14.

Microelectronic integrated circuit including triangular semiconductor "and" gate device

Номер патента: US5631581A. Автор: Michael D. Rostoker,Ashok K. Kapoor,Stanislav V. Aleshin,Ranko Scepanovic,Alexander E. Andreev,Alexander S. Podkolzin,James S. Koford,Edwin R. Jones,Gobi R. Padmanahben,Valeriy B. Kudryavtsev. Владелец: LSI Logic Corp. Дата публикации: 1997-05-20.

Microelectronic integrated circuit including hexagonal semiconductor "and"g

Номер патента: US5656850A. Автор: Ashok Kapoor. Владелец: LSI Logic Corp. Дата публикации: 1997-08-12.

Integrated circuit including a capacitor and method

Номер патента: US20090242952A1. Автор: Steffen Meyer,Frank Heinrichsdorff,Jens Schmidt. Владелец: Qimonda AG. Дата публикации: 2009-10-01.

Surface mounted circuits including hybrid circuits, having cvd interconnects, and method of preparing the circuits

Номер патента: CA1242810A. Автор: Jaime Reyes,David Allred. Владелец: Energy Conversion Devices Inc. Дата публикации: 1988-10-04.

Method of fabricating an electronic circuit including an aperture through the substrate thereof

Номер патента: US4520561A. Автор: Richard Brown. Владелец: RCA Corp. Дата публикации: 1985-06-04.

Reconfigurable analog filter and integrated circuit including the same

Номер патента: US20210105007A1. Автор: Jisoo Chang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-04-08.

Integrated circuit including flip-flop and computing system for designing the integrated circuit

Номер патента: US11901902B2. Автор: Ahreum Kim,Minsu Kim,Seungman Lim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-02-13.

Sub-sampling phase locked loop with compensated loop bandwidth and integrated circuit including the same

Номер патента: EP4170909A1. Автор: Seunghyun Oh,Seungjin Kim,Gyusik Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-04-26.

Integrated circuit including field effect transistors having a contact on active gate compatible with a small cell area having a small contacted poly pitch

Номер патента: US20190148298A1. Автор: RWIK Sengupta,Mark Rodder,Titash Rakshit,Joon Goo Hong. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-05-16.

Passive mixer including LLC filter and RF transmitting circuit including passive mixer

Номер патента: US11855665B2. Автор: Wonjun Jung. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-12-26.

Circuit including a negative differential resistance (ndr) device having a graphene channel, and method of operating the cirucit

Номер патента: US20130234762A1. Автор: Shu-Jen Han,Yanqing Wu,Yu-Ming Lin. Владелец: International Business Machines Corp. Дата публикации: 2013-09-12.

DC-to-DC converter and integrated circuit including the same

Номер патента: US11804778B2. Автор: Yunho Lee,Hyungmin Lee,Sangho Kim,Sungmin YOO,Taehwang KONG,Junhyeok YANG,Woojoong JUNG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-10-31.

Electrostatic discharge device and electrostatic discharge protection circuit including the same

Номер патента: US20210384188A1. Автор: Sukjin Kim,Mijin LEE,Chanhee Jeon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-12-09.

High-frequency circuit including a circuit board and a waveguide structure

Номер патента: US20220140488A1. Автор: Michael Schoor,Klaus Voigtlaender,Klaus Baur,Ronny Ludwig,Gustav Klett,Christian Hollaender. Владелец: ROBERT BOSCH GMBH. Дата публикации: 2022-05-05.

Differential oscillator having two sides, an integrated circuit including the differential oscillator, a mobile telephone including the differential oscillator, and method of operating the differential oscillator

Номер патента: US7187248B2. Автор: Peter Wardlow Shadwell. Владелец: Sony United Kingdom Ltd. Дата публикации: 2007-03-06.

Integrated circuit including interconnection and method of fabricating the same, the interconnection including a pattern shaped and/or a via disposed for mitigating electromigration

Номер патента: US20200235126A1. Автор: Chang-Beom Kim,Tae-Joong Song,Ha-young Kim,Hyun-Jeong Roh,Dal-Hee LEE,Sung-We Cho. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-07-23.

Supply modulating circuit including switching circuit and wireless communication device including the supply modulating circuit

Номер патента: US20210083635A1. Автор: Youngho Jung,Dongsu Kim,Jiseon PAEK,Junsuk Bang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-03-18.

Power converter circuits including high electron mobility transistors for switching and rectification

Номер патента: US20150049514A1. Автор: Robert Joseph Callanan. Владелец: Cree Inc. Дата публикации: 2015-02-19.

Apparatus and circuits including transistors with different threshold voltages and methods of fabricating the same

Номер патента: US11973078B2. Автор: Chan-Hong Chern. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-04-30.

High-frequency circuit including a circuit board and a waveguide structure

Номер патента: US12010790B2. Автор: Michael Schoor,Klaus Voigtlaender,Klaus Baur,Ronny Ludwig,Gustav Klett,Christian Hollaender. Владелец: ROBERT BOSCH GMBH. Дата публикации: 2024-06-11.

Passive mixer including llc filter and rf transmitting circuit including passive mixer

Номер патента: EP4092908A1. Автор: Wonjun Jung. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-11-23.

Creating an aligned via and metal line in an integrated circuit including forming an oversized via mask

Номер патента: US20200118868A1. Автор: Runzi Chang,Min She. Владелец: MARVELL WORLD TRADE LTD. Дата публикации: 2020-04-16.

Creating an aligned via and metal line in an integrated circuit including forming an oversized via mask

Номер патента: US11081387B2. Автор: Runzi Chang,Min She. Владелец: Marvell Asia Pte Ltd. Дата публикации: 2021-08-03.

Dc-to-dc converter and integrated circuit including the same

Номер патента: US20240030822A1. Автор: Yunho Lee,Hyungmin Lee,Sangho Kim,Sungmin YOO,Taehwang KONG,Junhyeok YANG,Woojoong JUNG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-01-25.

High-frequency switch circuit and front-end circuit including same

Номер патента: US20210320389A1. Автор: Taizo Tatsumi. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2021-10-14.

Integrated electronic circuit including non-linear devices

Номер патента: US6777998B2. Автор: Maurizio Zuffada,Martin Aureliano Hassner,Giorgio Betti,Francesco Chrappan Soldavini. Владелец: International Business Machines Corp. Дата публикации: 2004-08-17.

Integrated circuits including metal-insulator-metal capacitors and methods of forming the same

Номер патента: US20120280358A1. Автор: Ming-Fa Chen,Yuan-Hung Liu,Sung-Hui Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2012-11-08.

Integrated circuit including transistors and a method of manufacturing the same

Номер патента: US11973142B2. Автор: Sangwook Kim,Yunseong LEE,Jinseong Heo,Sanghyun JO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-04-30.

Circuits including a titanium substrate

Номер патента: US20040139598A1. Автор: Walter Berryman. Владелец: Individual. Дата публикации: 2004-07-22.

Integrated circuit including a bipolar transistor and methods of making the same

Номер патента: US20120235280A1. Автор: Yeur-Luen Tu,Shih-Chang Liu,Chun-Tsung Kuo,Wei-Tung Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2012-09-20.

Communication circuit including amplifier module and electronic device comprising same

Номер патента: EP4395186A1. Автор: John Moon,Hyoseok NA. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-03.

Optical integrated circuit including junction laser with oblique mirror

Номер патента: US4136928A. Автор: Ralph A. Logan,James L. Merz. Владелец: Bell Telephone Laboratories Inc. Дата публикации: 1979-01-30.

Method and apparatus for reducing switching noise in a system-on-chip (SoC) integrated circuit including an analog-to-digital converter (ADC)

Номер патента: US7515076B1. Автор: Rahul Singh,Jie Fang,Mohit Sood,Prashanth Drakshapalli,Edwin de Angel. Владелец: Cirrus Logic Inc. Дата публикации: 2009-04-07.

Horizontal deflection circuit including protection for output transistor

Номер патента: CA1141024A. Автор: Archie M. Barter. Владелец: Tektronix Inc. Дата публикации: 1983-02-08.

Image sensor and electronic circuit included therein

Номер патента: US11418736B2. Автор: Kyung-Min Kim,Moo Young Kim,Kyoungmin Koh,Woong Joo,Mira Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-08-16.

Switched-mode power supply circuit including a starting circuit

Номер патента: US5041956A. Автор: Antonius A. M. Marinus. Владелец: US Philips Corp. Дата публикации: 1991-08-20.

Integrated circuit including a resistive element

Номер патента: GB2016208A. Автор: . Владелец: Western Electric Co Inc. Дата публикации: 1979-09-19.

Data decoding circuit including phase-locked loop timing

Номер патента: CA1301283C. Автор: Russell Brown,Bernardo Rub,Michael Leis,Michael J. Muchnik,Elmer Simmons. Владелец: Digital Equipment Corp. Дата публикации: 1992-05-19.

Input circuit and semiconductor integrated circuit including the same

Номер патента: US8482321B2. Автор: Yuji Nakajima. Владелец: Renesas Electronics Corp. Дата публикации: 2013-07-09.

Integrated circuit including a first channel and a second channel

Номер патента: US20090250763A1. Автор: Franz Kuttner,Gerhard Knoblinger. Владелец: Individual. Дата публикации: 2009-10-08.

Integrated circuit including memory having reduced cross talk

Номер патента: EP2278621A3. Автор: Thomas Happ,Jan Boris Philipp. Владелец: Qimonda AG. Дата публикации: 2013-07-31.

Elevator safety circuit including non forced guided relay

Номер патента: US10035680B2. Автор: Marvin Dehmlow,Jochen Thomas Richter,Hebert Horbrügger,Richard F. Magda. Владелец: Otis Elevator Co. Дата публикации: 2018-07-31.

Electron beam deflection circuit including thyristors

Номер патента: US3906306A. Автор: Andre Lamoureux. Владелец: Thomson CSF SA. Дата публикации: 1975-09-16.

Circuit including an MOS transistor whose gate is protected from oxide rupture

Номер патента: US4385337A. Автор: Ichiro Kobayashi,Hiroshi Iwahashi,Masamichi Asano. Владелец: Tokyo Shibaura Electric Co Ltd. Дата публикации: 1983-05-24.

Circuit and Method for Controlling Rectifier, and Circuit Including the Rectifier

Номер патента: US20230402932A1. Автор: Ying Cao,Donghao LI,Jiashen TIAN,Huajuan XIAO. Владелец: Telefonaktiebolaget LM Ericsson AB. Дата публикации: 2023-12-14.

Flip-flop circuit including control signal generation circuit

Номер патента: US11863188B2. Автор: Byounggon Kang,Dalhee Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-01-02.

Integrated circuit including dipole incorporation for threshold voltage tuning in transistors

Номер патента: US11894367B2. Автор: Chih-Hao Wang,Chung-Wei Hsu,Mao-Lin Huang,Lung-Kun Chu,Jia-Ni YU,Kuo-Cheng Chiang,Kuan-Lun Cheng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-02-06.

Drive circuit including connection path selection sections and voltage generation section

Номер патента: US20160013393A1. Автор: Shuji Otsuka,Toshifumi Asanuma,Tadashi Kiyuna. Владелец: Seiko Epson Corp. Дата публикации: 2016-01-14.

Integrated circuit including interconnection for mitigating electromigration and method of fabricating the same

Номер патента: US20180294280A1. Автор: Chang-Beom Kim,Tae-Joong Song,Ha-young Kim,Hyun-Jeong Roh,Dal-Hee LEE,Sung-We Cho. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-10-11.

Integrated circuits including replacement gate structures and methods for fabricating the same

Номер патента: US20160163824A1. Автор: Min-Hwa Chi,Xusheng Wu,Dong-woon Shin. Владелец: Globalfoundries Inc. Дата публикации: 2016-06-09.

Analog-to-digital converting circuit and accumulation circuit including the same

Номер патента: US8810444B2. Автор: Hee Chang Hwang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2014-08-19.

Decoder circuit including decoders with respective performance and power levels and decoding respective subsets of codewords of received data

Номер патента: US11863204B2. Автор: Mario R. Hueda,Mario A. Castrillon,Damián A. Morero,Genaro Bergero,Cristian Cavenio,Teodoro Goette,Martin Asinari,Ramiro R. Lopez. Владелец: Marvell Asia Pte Ltd. Дата публикации: 2024-01-02.

PRODUCTION OF AN INTEGRATED CIRCUIT INCLUDING ELECTRICAL CONTACT ON SiC

Номер патента: US20130193449A1. Автор: Roland Rupp,Thomas Gutt,Michael Treu. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2013-08-01.

PRODUCTION OF AN INTEGRATED CIRCUIT INCLUDING ELECTRICAL CONTACT ON SiC

Номер патента: US20150041831A1. Автор: Roland Rupp,Thomas Gutt,Michael Treu. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2015-02-12.

Switching regulator and power management integrated circuit including the same

Номер патента: US20240088788A1. Автор: Hyun Seok Nam,Jeong Woon Kong. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-03-14.

Integrated circuits including high-voltage high-power and high-voltage low-power supply nodes

Номер патента: EP4334798A1. Автор: James Michael Gardner,Rogelio Cicili,Eric Thomas Martin. Владелец: Hewlett Packard Development Co LP. Дата публикации: 2024-03-13.

Amplifying circuit and analog-digital converting circuit including same

Номер патента: US8339296B2. Автор: Takumi DANJO. Владелец: Fujitsu Ltd. Дата публикации: 2012-12-25.

Integrated circuits including memory cells

Номер патента: US20240116293A1. Автор: Michael W. Cumbie,James Michael Gardner,Scott A. Linn. Владелец: Hewlett Packard Development Co LP. Дата публикации: 2024-04-11.

Integrated circuit including dipole incorporation for threshold voltage tuning in transistors

Номер патента: US20240145470A1. Автор: Chih-Hao Wang,Chung-Wei Hsu,Mao-Lin Huang,Lung-Kun Chu,Jia-Ni YU,Kuo-Cheng Chiang,Kuan-Lun Cheng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-05-02.

Production of an integrated circuit including electrical contact on SiC

Номер патента: US8450196B2. Автор: Roland Rupp,Thomas Gutt,Michael Treu. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2013-05-28.

Circuit and method for controlling rectifier, and circuit including the rectifier

Номер патента: EP4241374A1. Автор: Ying Cao,Donghao LI,Jiashen TIAN,Huajuan XIAO. Владелец: Telefonaktiebolaget LM Ericsson AB. Дата публикации: 2023-09-13.

Radio frequency power divider and circuit including the same

Номер патента: US20230327312A1. Автор: Qian Wan,Jun Ding,Xiaoqin ZHANG,Linxiang Zhan,Hairong Xie. Владелец: Telefonaktiebolaget LM Ericsson AB. Дата публикации: 2023-10-12.

Circuit Including Configuration Terminal and Method

Номер патента: US20200373291A1. Автор: Winfried Bakalski,Andreas Baenisch. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2020-11-26.

Integrated circuit including a metal pillar in contact with a silicon region on an ohmic coupling region, and corresponding manufacturing method

Номер патента: US20230326947A1. Автор: Magali Gregoire,Joel Schmitt. Владелец: STMicroelectronics Crolles 2 SAS. Дата публикации: 2023-10-12.

Integrated circuit including ESD protection modules

Номер патента: US11798934B2. Автор: Hongquan Sun,Wangsheng Xie. Владелец: Huawei Technologies Co Ltd. Дата публикации: 2023-10-24.

Buffer control circuit and integrated circuit including the same

Номер патента: US20120262323A1. Автор: Taek-Sang Song,Dae-Han Kwon. Владелец: Hynix Semiconductor Inc. Дата публикации: 2012-10-18.

Pre-amplifier circuit including microphone pre-amplifier stage

Номер патента: US20170346450A1. Автор: Sebastiaan DE VRIES. Владелец: Tymphany Hong Kong Ltd. Дата публикации: 2017-11-30.

Integrated circuits including selectively deposited metal capping layers on copper lines and methods for fabricating the same

Номер патента: US20150194344A1. Автор: Moosung Chae,Larry Zhao. Владелец: Globalfoundries Inc. Дата публикации: 2015-07-09.

Semiconductor integrated circuit including memory cells

Номер патента: US9059036B2. Автор: Kazuhiro Abe. Владелец: Fujitsu Ltd. Дата публикации: 2015-06-16.

Analog-to-digital converting circuit and accumulation circuit including the same

Номер патента: US20130257636A1. Автор: Hee Chang Hwang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2013-10-03.

Integrated circuit including esd protection modules

Номер патента: US20210272948A1. Автор: Hongquan Sun,Wangsheng Xie. Владелец: Huawei Technologies Co Ltd. Дата публикации: 2021-09-02.

Gate array integrated circuit including a unit cell basic layer having gate terminal regions allowing two contact pads to be disposed laterally

Номер патента: US20060060889A1. Автор: Hirofumi Uchida. Владелец: Oki Electric Industry Co Ltd. Дата публикации: 2006-03-23.

Power supply circuit including voltage regulator and headphone driving circuit employing the same

Номер патента: US20110222702A1. Автор: Min Soo Kim,Jin Ho Oh,Yeongha Choi,Jae-Hee WON. Владелец: Neofidelity Inc. Дата публикации: 2011-09-15.

Semiconductor package including test pad and bonding pad structure for die connection and methods for forming the same

Номер патента: US20230060208A1. Автор: Jen-Yuan Chang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-03-02.

Semiconductor package including test bumps

Номер патента: US20220148994A1. Автор: Taehyeong Kim,Hyeongmun KANG,Seungduk Baek. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-05-12.

Semiconductor package including test bumps

Номер патента: US11257725B2. Автор: Taehyeong Kim,Hyeongmun KANG,Seungduk Baek. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-02-22.

Testing a semiconductor die using temporary test pads applied to conductive pads of the semiconductor die

Номер патента: US20230120305A1. Автор: Rahul Agarwal,Chintan BUCH,Chia-Hao Cheng,Arsalan Alam. Владелец: Advanced Micro Devices Inc. Дата публикации: 2023-04-20.

SEMICONDUCTOR PACKAGE INCLUDING TEST PAD

Номер патента: US20200135594A1. Автор: KIM Tae Hun,Kim Ji Hoon,LEE Hyuek Jae,HONG Ji Seok,HWANG Ji Hwan. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2020-04-30.

Specimen cup including test card slot and method of use thereof

Номер патента: US09949724B2. Автор: Larry Hartselle. Владелец: Instant Tech Subsidiary Acquisition Inc. Дата публикации: 2018-04-24.

SEMICONDUCTOR CHIP INCLUDING CHIP PAD, REDISTRIBUTION WIRING TEST PAD, AND REDISTRIBUTION WIRING CONNECTION PAD

Номер патента: US20170011976A1. Автор: Lee Chan-Ho,Chung Hyun-Soo,PARK MYEONG-SOON. Владелец: . Дата публикации: 2017-01-12.

Optical network test instrument including testing for optical network unit and optical line terminal assignment

Номер патента: US20240171273A1. Автор: Joachim LONNE,Dominik Prause,Niki KIRSCHENMANN,Olivier DAIRE. Владелец: VIAVI SOLUTIONS INC. Дата публикации: 2024-05-23.

Optical network test instrument including testing for optical network unit and optical line terminal assignment

Номер патента: EP4373011A1. Автор: Joachim LONNE,Dominik Prause,Niki KIRSCHENMANN,Olivier DAIRE. Владелец: VIAVI SOLUTIONS INC. Дата публикации: 2024-05-22.

Semiconductor package including test bumps

Номер патента: US20210175134A1. Автор: Taehyeong Kim,Hyeongmun KANG,Seungduk Baek. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-06-10.

Structure of semiconductor substrate including test element group wiring

Номер патента: US20060131578A1. Автор: Takashi Nasuno,Hiroshi Tsuda. Владелец: ROHM CO LTD. Дата публикации: 2006-06-22.

Test pad

Номер патента: CN109872983B. Автор: 谭刚,贺超. Владелец: Wuhan China Star Optoelectronics Technology Co Ltd. Дата публикации: 2020-10-16.

Semiconductor device including external connection pads and test pads

Номер патента: US8927987B2. Автор: Hideaki Kondou. Владелец: Panasonic Corp. Дата публикации: 2015-01-06.

Method and apparatus for semiconductor assembly which includes testing of chips and replacement of bad chips prior to final assembly

Номер патента: US5904497A. Автор: Salman Akram. Владелец: Micron Technology Inc. Дата публикации: 1999-05-18.

Semiconductor package including test line structure

Номер патента: US20230386944A1. Автор: Chia-Ping Lai,Tsung-Yang Hsieh,Chien-Chang Lee,Wen-Chung Lu,Cheng-Kang Huang,Mei-Shih Kuo,Alice Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-30.

Circuit substrate and branch circuit including high pass filter and low pass filter with mounting portions on substrate body

Номер патента: US9673775B2. Автор: Satoshi Asada. Владелец: Murata Manufacturing Co Ltd. Дата публикации: 2017-06-06.

Integrated circuit including a plurality of components including a transformer

Номер патента: US10367539B2. Автор: Sebastien Robert,Guy Le Moal. Владелец: NXP BV. Дата публикации: 2019-07-30.

Chip structure with bumps and testing pads

Номер патента: US7977803B2. Автор: Chu-Fu Lin,Chien-Kang Chou,Chiu-Ming Chou,Nick Kuo. Владелец: Megica Corp. Дата публикации: 2011-07-12.

Semiconductor structure, an integrated circuit including a semiconductor structure and a method for manufacturing a semiconductor structure

Номер патента: EP2394299A1. Автор: Philippe Renaud. Владелец: FREESCALE SEMICONDUCTOR INC. Дата публикации: 2011-12-14.

Integrated circuits including magnetic core inductors and methods for fabricating the same

Номер патента: US09613897B2. Автор: Juan Boon Tan,Mahesh BHATKAR,Luke England,Wanbing YI,Lulu Peng. Владелец: GLOBALFOUNDRIES SINGAPORE PTE LTD. Дата публикации: 2017-04-04.

METHOD FOR MANUFACTURING TESTED APPARATUS AND METHOD FOR MANUFACTURING SYSTEM INCLUDING TESTED APPARATUS

Номер патента: US20150037914A1. Автор: TAKAHASHI Tetsuji,Ishikawa Toru,TAKAKURA Kazuya. Владелец: . Дата публикации: 2015-02-05.

Output control circuit for semiconductor apparatus and output driving circuit including the same

Номер патента: US20150280720A1. Автор: Da In IM,Jong Ho Jung. Владелец: SK hynix Inc. Дата публикации: 2015-10-01.

Light-emitting device package having a testing pad and testing method thereof

Номер патента: TW201201353A. Автор: Yi-Wei Chen,Shih-Hua Pan. Владелец: Everlight Electronics Co Ltd. Дата публикации: 2012-01-01.

Circuit including current-mode logic driver with multi-rate programmable pre-emphasis delay element

Номер патента: US20110175656A1. Автор: YUE YU,Han Bi. Владелец: Integrated Device Technology Inc. Дата публикации: 2011-07-21.

Circuit Including a Field-Effect Transistor and a Bipolar Transistor

Номер патента: US20190074374A1. Автор: Gary Horst Loechelt. Владелец: Semiconductor Components Industries LLC. Дата публикации: 2019-03-07.

Nfc device powered on in response to radio frequency signal, nfc tag circuit included therein, and method of operating the nfc device

Номер патента: US20240259047A1. Автор: Sung Wan Kim,Sung Hun Chun,Pyeong Han Lee,Kwang Beom PARK,Chang Ho RYU. Владелец: 3A LOGICS Inc. Дата публикации: 2024-08-01.

Chip structure with bumps and testing pads

Номер патента: TWI250598B. Автор: Chu-Fu Lin,Chien-Kang Chou,Chiu-Ming Chou,Nick Kuo. Владелец: Megic Corp. Дата публикации: 2006-03-01.

Coil component and filter circuit including the same

Номер патента: US20210407728A1. Автор: Atsushi Toujo. Владелец: Murata Manufacturing Co Ltd. Дата публикации: 2021-12-30.

Coil including structure for minimizing influence thereon by metal material and resonant circuit including same

Номер патента: US12107442B2. Автор: Jaehyun Park,Jaeseok Park,Sungku YEO,Youngho Ryu,Bohwan Choi,Beomwoo GU. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-10-01.

Circuit including dual power converters and an inductor and a method of using an electronic device including a circuit including dual power converters and an inductor

Номер патента: US09966846B2. Автор: Gary H. Loechelt. Владелец: Semiconductor Components Industries LLC. Дата публикации: 2018-05-08.

Integrated circuit including an array of logic tiles, each logic tile including a configurable switch interconnect network

Номер патента: US09906225B2. Автор: Cheng C. Wang. Владелец: Flex Logix Technologies Inc. Дата публикации: 2018-02-27.

Methods for an ESD protection circuit including trigger-voltage tunable cascode transistors

Номер патента: US09653454B1. Автор: Chien-Hsin Lee,Mahadeva Iyer NATARAJAN,Manjunatha Prabhu. Владелец: Globalfoundries Inc. Дата публикации: 2017-05-16.

Method of forming metal pads with openings in integrated circuits including forming a polymer plug extending into a metal pad

Номер патента: US09601372B2. Автор: Yu-Ting Huang,Shuo-Mao Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-03-21.

Delay circuit, delay locked loop circuit including delay circuit and processor including delay locked loop circuit

Номер патента: US09571110B2. Автор: Masazumi Maeda,Yoshiharu Yoshizawa. Владелец: Fujitsu Ltd. Дата публикации: 2017-02-14.

Output control circuit for semiconductor apparatus and output driving circuit including the same

Номер патента: US09543968B2. Автор: Da In IM,Jong Ho Jung. Владелец: SK hynix Inc. Дата публикации: 2017-01-10.

Inductor shielding structure, integrated circuit including the same and method of forming the integrated circuit

Номер патента: US09484312B2. Автор: HO-HSIANG Chen,Tzu-Jin Yeh,Ying-Ta Lu,Chi-Hsien Lin,Hsien-Yuan LIAO. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-11-01.

Aircraft fire protection system including test means

Номер патента: IL61844A. Автор: . Владелец: William A Enk. Дата публикации: 1991-03-10.

Integrated clock gating cell and integrated circuit including the same

Номер патента: US20210194486A1. Автор: Ahreum Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-06-24.

Half-bridge circuit including integrated level shifter transistor

Номер патента: US12002804B2. Автор: Franz Hirler,Peter Irsigler,Armin Willmeroth. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2024-06-04.

Transistor circuits including fringeless transistors and method of making the same

Номер патента: US20240258317A1. Автор: Hiroshi Nakatsuji,Koichi Matsuno,Dai Iwata,Kiyokazu Shishido. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-08-01.

Current steering digital-to-analog converter and integrated circuit including the same

Номер патента: US11916562B2. Автор: Seunghyun Oh,Wan Kim,Jiseon PAEK,Youngsea CHO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-02-27.

Integrated clock gating cell and integrated circuit including the same

Номер патента: US20210099173A1. Автор: Ahreum Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-04-01.

Filter device and radio-frequency front end circuit including the same

Номер патента: US20230188110A1. Автор: Tetsuo Taniguchi,Masayuki Kikuda. Владелец: Murata Manufacturing Co Ltd. Дата публикации: 2023-06-15.

Circuit And An Integrated Circuit Including A Transistor And Another Component Coupled Thereto

Номер патента: US20170025405A1. Автор: Chun-Li Liu,Woochul Jeon,Joe Fulton. Владелец: Semiconductor Components Industries LLC. Дата публикации: 2017-01-26.

Charge pumps, logic circuits including charge pumps, logic devices including logic circuits, and methods of operating logic circuits

Номер патента: US20240275385A1. Автор: Santosh Sharma,Mei Yu Soh. Владелец: GlobalFoundries US Inc. Дата публикации: 2024-08-15.

Charge pumps, logic circuits including charge pumps, logic devices including logic circuits, and methods of operating logic circuits

Номер патента: EP4415266A1. Автор: Santosh Sharma,Mei Yu Soh. Владелец: GlobalFoundries US Inc. Дата публикации: 2024-08-14.

Band pass filter and high frequency front-end circuit including same

Номер патента: US12107312B2. Автор: Masayuki Kikuda. Владелец: Murata Manufacturing Co Ltd. Дата публикации: 2024-10-01.

Methods for fabricating integrated circuits including substrate contacts

Номер патента: US09997393B1. Автор: Bo Yu,PURAKH Raj Verma,Zeng Wang,Wensheng Deng,Yuzhan Wang. Владелец: GLOBALFOUNDRIES SINGAPORE PTE LTD. Дата публикации: 2018-06-12.

Package substrate and flip-chip package circuit including the same

Номер патента: US09893003B2. Автор: Shih-Ping Hsu,Che-Wei Hsu. Владелец: Phoenix Pioneer Technology Co Ltd. Дата публикации: 2018-02-13.

Electro-static discharge structure, circuit including the same and method of using the same

Номер патента: US09887188B2. Автор: Ming Hsien Tsai. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-02-06.

Integrated circuit including wire structure, related method and design structure

Номер патента: US09831122B2. Автор: Jeffrey P. Gambino,Edward C. Cooney, III,Zhong-Xiang He,Robert K. Leidy. Владелец: Globalfoundries Inc. Дата публикации: 2017-11-28.

Gate driving circuit including constant current sources, and switching apparatus and power supply apparatus having the same

Номер патента: US09780771B2. Автор: Chang Seok Lee,Joong Ho Choi,Deuk Hee Park,Sang Hyun Cha,Yun Joong Lee,Je Hyeon Yu,Hyeon Seon YU. Владелец: Industry Cooperation Foundation of University of Seoul. Дата публикации: 2017-10-03.

DC/DC converter control circuit including a plurality of series-connected transistors and a capacitive element coupling nodes of the plurality of series connected transistors

Номер патента: US09775251B2. Автор: Eric Cirot,Patrik Arno. Владелец: STMicroelectronics International NV. Дата публикации: 2017-09-26.

Circuit and an integrated circuit including a transistor and another component coupled thereto

Номер патента: US09754931B2. Автор: Chun-Li Liu,Woochul Jeon,Joe Fulton. Владелец: Semiconductor Components Industries LLC. Дата публикации: 2017-09-05.

Package substrate and flip-chip package circuit including the same

Номер патента: US09548234B2. Автор: Shih-Ping Hsu,Che-Wei Hsu. Владелец: Phoenix Pioneer Technology Co Ltd. Дата публикации: 2017-01-17.

Electric actuator with electric motor and electric circuits includings connecting terminal

Номер патента: US09479030B2. Автор: Haruaki Motoda. Владелец: HITACHI AUTOMOTIVE SYSTEMS LTD. Дата публикации: 2016-10-25.

Electronic circuit including a switch having an associated breakdown voltage and a method of using the same

Номер патента: US09413348B2. Автор: Jaume Roig-Guitart,Filip Bauwens,Chin Foong TONG. Владелец: Semiconductor Components Industries LLC. Дата публикации: 2016-08-09.

Test pad structure on wafer

Номер патента: US20130009656A1. Автор: Ping-Chang Wu. Владелец: United Microelectronics Corp. Дата публикации: 2013-01-10.

Integrated circuit system with test pads and method of manufacture thereof

Номер патента: US20130069063A1. Автор: Bao Xusheng,Rui Huang. Владелец: Individual. Дата публикации: 2013-03-21.

GATE-STRESS TEST CIRCUIT WITHOUT TEST PAD

Номер патента: US20130169318A1. Автор: Li Lin. Владелец: STMICROELECTRONICS (SHENZHEN) R&D CO. LTD.. Дата публикации: 2013-07-04.

DIE TESTING USING TOP SURFACE TEST PADS

Номер патента: US20130248864A1. Автор: Whetsel Lee D.,Antley Richard L.. Владелец: TEXAS INSTRUMENTS INCORPORATED. Дата публикации: 2013-09-26.

TEST PAD STRUCTURE OF CHIP

Номер патента: US20220037218A1. Автор: TSENG KUO-WEI,CHEN PO-CHI. Владелец: . Дата публикации: 2022-02-03.

SEMICONDUCTOR CHIP WITH SOLDER CAP PROBE TEST PADS

Номер патента: US20210066144A1. Автор: Bhagavat Milind S.,Fu Lei,Cheng Chia-Hao. Владелец: . Дата публикации: 2021-03-04.

DIE TESTING USING TOP SURFACE TEST PADS

Номер патента: US20160079132A1. Автор: Whetsel Lee D.,Antley Richard L.. Владелец: . Дата публикации: 2016-03-17.

DIE TESTING USING TOP SURFACE TEST PADS

Номер патента: US20150097186A1. Автор: Whetsel Lee D.,Antley Richard L.. Владелец: . Дата публикации: 2015-04-09.

DIE TESTING USING TOP SURFACE TEST PADS

Номер патента: US20140225112A1. Автор: Whetsel Lee D.,Antley Richard L.. Владелец: TEXAS INSTRUMENTS INCORPORATED. Дата публикации: 2014-08-14.

PACKAGE SUBSTRATE WITH TESTING PADS ON FINE PITCH TRACES

Номер патента: US20140247573A1. Автор: Bchir Omar J.,KANG Kuiwon,KIM Chin-Kwan. Владелец: QUALCOMM INCORPORATED. Дата публикации: 2014-09-04.

GATE-STRESS TEST CIRCUIT WITHOUT TEST PAD

Номер патента: US20140300393A1. Автор: Li Lin. Владелец: . Дата публикации: 2014-10-09.

EMBEDDED SIGE EPITAXY TEST PAD

Номер патента: US20160225678A1. Автор: Tan Jun,Zhou Haifeng. Владелец: . Дата публикации: 2016-08-04.

DESIGN OF EMBEDDED SIGE EPITAXY TEST PAD

Номер патента: US20180240718A1. Автор: Tan Jun,Zhou Haifeng. Владелец: . Дата публикации: 2018-08-23.

MECHANICAL ATTACHMENT OF TEST PADS TO A DIAGNOSTIC TEST DEVICE

Номер патента: US20160310951A1. Автор: Price William Pat,Titmus Ted. Владелец: . Дата публикации: 2016-10-27.

SACRIFICIAL TEST PADS FOR INLINE TEST ACCESS

Номер патента: US20180315672A1. Автор: CASSIER Amer Christophe,PAYNTER Charles. Владелец: . Дата публикации: 2018-11-01.

Semiconductor package with electrical test pads

Номер патента: US20170323834A1. Автор: Federico Giovanni Ziglioli. Владелец: STMICROELECTRONICS SRL. Дата публикации: 2017-11-09.

TEST PAD WITH CRACK STOP PROTECTION

Номер патента: US20200357707A1. Автор: TAN Juan Boon,YI Wanbing,CHOCKALINGAM RAMASAMY. Владелец: . Дата публикации: 2020-11-12.

Method for the probe test pad on the semiconductor

Номер патента: KR100430419B1. Автор: 박성규,이기상. Владелец: 주식회사 실트론. Дата публикации: 2004-05-04.

Test pad design for reducing the effect of contact resistances

Номер патента: US7825678B2. Автор: Yih-Yuh Doong,Chien-Chang Lee,Tseng Chin Lo,Chih-Chieh Shao. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2010-11-02.

Test pads on flash memory cards

Номер патента: EP1974380A2. Автор: Hem Takiar,Shrikar Bhagath. Владелец: SanDisk Corp. Дата публикации: 2008-10-01.

Test pads on flash memory cards

Номер патента: WO2007079123A2. Автор: Hem Takiar,Shrikar Bhagath. Владелец: SanDisk Corporation. Дата публикации: 2007-07-12.

Test pads on flash memory cards

Номер патента: TWI355721B. Автор: Hem Takiar,Shrikar Bhagath. Владелец: SanDisk Corp. Дата публикации: 2012-01-01.

Methods and apparatus for testing pads on wafers

Номер патента: US8648341B2. Автор: Jiun-Jie Huang,Jen-Pan Wang,Chung-Yuan Yang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2014-02-11.

Intelligent knee joint tibia platform test pad module

Номер патента: CN105832448A. Автор: 刘念. Владелец: JIASITE MEDICAL EQUIPMENT (TIANJIN) CO Ltd. Дата публикации: 2016-08-10.

Tape Package having backside test pad and method for electrical testing thereof

Номер патента: KR100505665B1. Автор: 정예정. Владелец: 삼성전자주식회사. Дата публикации: 2005-08-03.

Silicon wafer having testing pad(s) and method for testing the same

Номер патента: US8502223B2. Автор: Chi-Han Chen. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2013-08-06.

A kind of test pad structure and preparation method thereof

Номер патента: CN106304627A. Автор: 吕晓丽. Владелец: EverDisplay Optronics Shanghai Co Ltd. Дата публикации: 2017-01-04.

Versatile body fluid test pad worn at location of excretion and valued for early diagnosis of threatening diseases during pregnancy, includes indicator displaying e.g. pH

Номер патента: DE10016383A1. Автор: Erich Saling. Владелец: Individual. Дата публикации: 2001-06-07.

Flip-chip bumping structure with dedicated test pads on semiconductor chip and method of fabricating the same

Номер патента: US6359342B1. Автор: Lien-Chi Chan,Ting-Ke Chai,Pao-Ho Yuan,Jen-Yi Tsai. Владелец: Siliconware Precision Industries Co Ltd. Дата публикации: 2002-03-19.

Embedded SiGe epitaxy test pad

Номер патента: US10008420B2. Автор: Jun Tan,Haifeng Zhou. Владелец: Shanghai Huali Microelectronics Corp. Дата публикации: 2018-06-26.

Circular test pads on scribe street area

Номер патента: US20030215966A1. Автор: Richard Valerio,Ruben Rolda,Jenny Olero. Владелец: Texas Instruments Inc. Дата публикации: 2003-11-20.

Sacrificial test pads for inline test access

Номер патента: WO2018200092A1. Автор: Amer Christophe CASSIER,Charles Paynter. Владелец: QUALCOMM INCORPORATED. Дата публикации: 2018-11-01.

LED package with multiple test pads and parallel circuit elements

Номер патента: US11869816B2. Автор: Fu-Bang CHEN,Kuo-Hsin Huang,Chih-Chiang Chang,Chun-Ming Lai,Tzeng-Guang Tsai,Chang-Ching Huang,Wen-Hsing Huang. Владелец: Excellence Opto Inc. Дата публикации: 2024-01-09.

Wafer structure and bumping process for protecting the test pad

Номер патента: TWI298192B. Автор: Teck-Chong Lee,Chao Fu Weng. Владелец: Advanced Semiconductor Eng. Дата публикации: 2008-06-21.

Wafer structure and bumping process for protecting the test pad

Номер патента: TW200644188A. Автор: Chao-Fu Weng,Teck-Chong Lee. Владелец: Advanced Semiconductor Eng. Дата публикации: 2006-12-16.

Integrated circuit including super via and method of making

Номер патента: US11735517B2. Автор: Wei-Cheng Lin,Jiann-Tyng Tzeng,Kam-Tou SIO. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-08-22.

Method of improving linearity of amplifier circuit including magnetically coupled feedback loop and DC bias current adjustment without impacting amplifier gain

Номер патента: US12034411B2. Автор: Mats Carlsson,Ali Fard. Владелец: QuantalRF AG. Дата публикации: 2024-07-09.

Electronic circuits including a MOSFET and a dual-gate JFET

Номер патента: EP2892079A3. Автор: Alexandre Bracale,Denis A. Masliah. Владелец: Acco Semiconductor Inc. Дата публикации: 2015-10-14.

Communication circuit including a transmitter

Номер патента: US20190288722A1. Автор: Vinod Panikkath,Bhushan Shanti Asuri,Krishnaswamy Thiagarajan,Ashok Swaminathan,Ibrahim Chamas,Dongwon Seo,Shahin Mehdizad Taleie,Sy-Chyuan Hwu,Zhilong Tang,Behnam Sedighi,Sameer Vasantlal Vora,Nitz Saputra,Ayush Mittal,Ping Wing Lai,Yen-Wei Chang,Tonmoy Biswas. Владелец: Qualcomm Inc. Дата публикации: 2019-09-19.

Heterolithic microwave integrated circuits including gallium-nitride devices on highly doped regions of intrinsic silicon

Номер патента: US20200020681A1. Автор: Wayne Mack Struble,Timothy E. Boles. Владелец: MACOM Technology Solutions Holdings Inc. Дата публикации: 2020-01-16.

A lockable rocker switch, an electrical circuit including such a lockable rocker switch, and methods for unlocking and locking such a lockable rocker switch

Номер патента: WO2015079280A1. Автор: Remi BARRELLON,Olivier NEGRI. Владелец: VOLVO TRUCK CORPORATION. Дата публикации: 2015-06-04.

A lockable rocker switch, an electrical circuit including such a lockable rocker switch, and methods for unlocking and locking such a lockable rocker switch

Номер патента: EP3074994A1. Автор: Remi BARRELLON,Olivier NEGRI. Владелец: Volvo Truck Corp. Дата публикации: 2016-10-05.

Lockable rocker switch, an electrical circuit including such a lockable rocker switch, and methods for unlocking and locking such a lockable rocker switch

Номер патента: US9934917B2. Автор: Remi BARRELLON,Olivier NEGRI. Владелец: Volvo Truck Corp. Дата публикации: 2018-04-03.

Photodiode and light receiving device with built-in circuit including the photodiode

Номер патента: US20020038868A1. Автор: Hideo Wada,Naoki Fukunaga,Shigeki Hayashida,Kazuhiro Natsuaki,Isamu Ohkubo. Владелец: Individual. Дата публикации: 2002-04-04.

Power Routing for 2.5D or 3D Integrated Circuits Including a Buried Power Rail and Interposer with Power Delivery Network

Номер патента: US20240258206A1. Автор: Xi-Wei Lin,Victor Moroz. Владелец: Synopsys Inc. Дата публикации: 2024-08-01.

Resonance-type power converter circuit provided with resonance circuit including lc resonance circuit and switching element

Номер патента: US20240339866A1. Автор: Shingo Nagaoka,Takeshi Uematsu,Taichi MISHIMA,Hiroo Sekiya. Владелец: Chiba University NUC. Дата публикации: 2024-10-10.

Capacitor digital-to-analog converter using random reset signal and integrated circuit including the same

Номер патента: US12113545B2. Автор: Wan Kim,Yanghoon Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-10-08.

Integrated circuit including a capacitive element and corresponding manufacturing method

Номер патента: US12057513B2. Автор: Christian Rivero,Brice Arrazat,Julien Delalleau,Joel Metz. Владелец: STMICROELECTRONICS ROUSSET SAS. Дата публикации: 2024-08-06.

Programmable delay circuit including hybrid fin field effect transistors (finFETs)

Номер патента: US09985616B2. Автор: James D. Warnock,Ayan Datta,Sumitha George,Charudhattan Nagarajan,Vijay K. Ankenapalli. Владелец: International Business Machines Corp. Дата публикации: 2018-05-29.

Method for producing an integrated circuit including a metallization layer comprising low K dielectric material

Номер патента: US09941151B2. Автор: Mikhaïl Baklanov,Liping Zhang. Владелец: Interuniversitair Microelektronica Centrum vzw IMEC. Дата публикации: 2018-04-10.

Lockable rocker switch, an electrical circuit including such a lockable rocker switch, and methods for unlocking and locking such a lockable rocker switch

Номер патента: US09934917B2. Автор: Remi BARRELLON,Olivier NEGRI. Владелец: Volvo Truck Corp. Дата публикации: 2018-04-03.

Semiconductor device and semiconductor circuit including the semiconductor device with enhanced current-voltage characteristics

Номер патента: US09825026B2. Автор: John Twynam. Владелец: LG Innotek Co Ltd. Дата публикации: 2017-11-21.

Systems and methods for measuring a current output by a current generation circuit included in a cochlear implant

Номер патента: US09717906B2. Автор: R. Tissa Karunasiri. Владелец: ADVANCED BIONICS AG. Дата публикации: 2017-08-01.

Rectifier circuit including transistor whose channel formation region includes oxide semiconductor

Номер патента: US09673335B2. Автор: Koichiro Kamata. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2017-06-06.

Analog/digital circuit including back gate transistor structure

Номер патента: US09653486B2. Автор: Yoshiyuki Kurokawa. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2017-05-16.

Electronic circuits including a MOSFET and a dual-gate JFET

Номер патента: US09627374B2. Автор: Denis A. Masliah. Владелец: ACCO. Дата публикации: 2017-04-18.

Semiconductor integrated circuit including power TSVS

Номер патента: US09620483B2. Автор: Young Hee YOON,Ga Young Lee. Владелец: SK hynix Inc. Дата публикации: 2017-04-11.

Field-effect transistor including oxide semiconductor, and memory and semiconductor circuit including the same

Номер патента: US09548395B2. Автор: Shunpei Yamazaki,Yasuhiko Takemura,Hiromichi Godo. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2017-01-17.

Programmable delay circuit including hybrid fin field effect transistors (finFETs)

Номер патента: US09543935B1. Автор: James D. Warnock,Ayan Datta,Sumitha George,Charudhattan Nagarajan,Vijay K. Ankenapalli. Владелец: International Business Machines Corp. Дата публикации: 2017-01-10.

Coil structure, power factor correction circuit including the coil structure, and power supply including the power factor correction circuit

Номер патента: US20220385174A1. Автор: Chang Yong Kwon,Dong Kyun Ryu,Yun Sic BANG. Владелец: Solum Co Ltd. Дата публикации: 2022-12-01.

Integrated circuit including a plurality of components including a transformer

Номер патента: US20190109612A1. Автор: Sebastien Robert,Guy Le Moal. Владелец: NXP BV. Дата публикации: 2019-04-11.

Solid state lighting apparatus and circuits including LED segments configured for targeted spectral power distribution and methods of operating the same

Номер патента: US9839083B2. Автор: Antony P. Van de Ven,Matthew C. Reynolds. Владелец: Cree Inc. Дата публикации: 2017-12-05.

Low on-resistance MOSFET implemented DC source by-pass or circuit breaker with related self-supplied controller circuit including fire or other risk DC output disabling means

Номер патента: US8842402B2. Автор: Natale Aiello,Tiziana Teresa Signorelli,Francesco Pulvirenti. Владелец: STMICROELECTRONICS SRL. Дата публикации: 2014-09-23.

Quench protection circuit including a superconducting current limiter

Номер патента: GB2483991A. Автор: Minfeng Xu,Xianrui Huang,Anbo Wu. Владелец: General Electric Co. Дата публикации: 2012-03-28.

Circuits including high power transistors

Номер патента: GB2602142A. Автор: Light Roger,KNIGHT Luke,SUMMERLAND David. Владелец: Search For the Next Ltd. Дата публикации: 2022-06-22.

Transistor, display driver integrated circuit including a transistor, and a method of fabricating a transistor

Номер патента: US7935992B2. Автор: Hoon Chang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2011-05-03.

Controller with protection against cross-conduction for an electronic circuit including a pair of switches and related control method

Номер патента: US20240088876A1. Автор: Ivan FLORIANI,Elena Brigo. Владелец: STMICROELECTRONICS SRL. Дата публикации: 2024-03-14.

Control module with protection against cross-conduction for an electronic circuit including at least a pair of switches and related control method

Номер патента: EP4340199A1. Автор: Ivan FLORIANI,Elena Brigo. Владелец: STMICROELECTRONICS SRL. Дата публикации: 2024-03-20.

Filter device and radio-frequency front-end circuit including the same

Номер патента: US20240048113A1. Автор: Makoto Ogata. Владелец: Murata Manufacturing Co Ltd. Дата публикации: 2024-02-08.

Distortion compensation circuit including tunable phase path

Номер патента: US20130259485A1. Автор: Yi Wang. Владелец: Applied Optoelectronics Inc. Дата публикации: 2013-10-03.

Radio and radio circuit including dual controllers

Номер патента: WO2023220861A1. Автор: Ren Qiang Yan,Bi Hua LI. Владелец: TechTronic CordLess GP. Дата публикации: 2023-11-23.

Integrated circuit including active pattern having variable width and method of designing the same

Номер патента: US20230290784A1. Автор: Minjae Jeong,Jungho DO,Jisu YU,Hyeongyu You,Yunkyeong JANG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-09-14.

Programmable delay circuit including threshold-voltage programmable field effect transistor

Номер патента: US11855642B1. Автор: Venkatesh P. Gopinath,Navneet K. Jain. Владелец: GlobalFoundries US Inc. Дата публикации: 2023-12-26.

Package substrate and flip-chip package circuit including the same

Номер патента: US20160118327A1. Автор: Shih-Ping Hsu,Che-Wei Hsu. Владелец: Phoenix Pioneer Technology Co Ltd. Дата публикации: 2016-04-28.

Integrated circuit including standard cells and methodof designing the same

Номер патента: US20230307436A1. Автор: Minjae Jeong,Jungho DO,Sanghoon Baek,Jonghoon Jung,Taejoong Song,Jisu YU,Hyeongyu You. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-09-28.

Integrated circuit including wire structure and related method

Номер патента: US20150056799A1. Автор: Jeffrey P. Gambino,Edward C. Cooney, III,Zhong-Xiang He,Robert K. Leidy. Владелец: International Business Machines Corp. Дата публикации: 2015-02-26.

Lubricant Circuit Including a Cap Plug

Номер патента: US20120015749A1. Автор: James T. Gooden,Ronald V. Cornacchia. Владелец: FORD GLOBAL TECHNOLOGIES LLC. Дата публикации: 2012-01-19.

Rigid-flex circuit including coverlay

Номер патента: US20180063941A1. Автор: Du-I KANG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-03-01.

Delay circuit, delay locked loop circuit including delay circuit and processor including delay locked loop circuit

Номер патента: US20160105189A1. Автор: Masazumi Maeda,Yoshiharu Yoshizawa. Владелец: Fujitsu Ltd. Дата публикации: 2016-04-14.

Clock data recovery circuit including charge pump having reduced glitch current

Номер патента: US11757355B1. Автор: Simon Forey,Rajasekhar Nagulapalli,Parmanand Mishra. Владелец: Marvell Asia Pte Ltd. Дата публикации: 2023-09-12.

Integrated circuit including wire structure, related method and design structure

Номер патента: US20130320536A1. Автор: Jeffrey P. Gambino,Edward C. Cooney, III,Zhong-Xiang He,Robert K. Leidy. Владелец: International Business Machines Corp. Дата публикации: 2013-12-05.

Communication circuit including amplifier module, and electronic device comprising same

Номер патента: US20240171135A1. Автор: Jungmin Park,Daehee PARK,Janghoon Han. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-05-23.

Integrated circuit including standard cell

Номер патента: US20190287891A1. Автор: Jong-Hoon Jung,Tae-Joong Song,Ha-young Kim,Gi-young Yang,Jin-young Lim,In-gyum KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-09-19.

Integrated circuit including standard cell

Номер патента: US20200294905A1. Автор: Jong-Hoon Jung,Tae-Joong Song,Ha-young Kim,Gi-young Yang,Jin-young Lim,In-gyum KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-09-17.

Integrated circuit including standard cell

Номер патента: US20180226336A1. Автор: Jong-Hoon Jung,Tae-Joong Song,Ha-young Kim,Gi-young Yang,Jin-young Lim,In-gyum KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-08-09.

Integrated circuit including standard cell

Номер патента: US10672702B2. Автор: Jong-Hoon Jung,Tae-Joong Song,Ha-young Kim,Gi-young Yang,Jin-young Lim,In-gyum KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-06-02.

Current steering digital-to-analog converter and integrated circuit including the same

Номер патента: US20220368337A1. Автор: Seunghyun Oh,Wan Kim,Jiseon PAEK,Youngsea CHO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-11-17.

Radio frequency integrated circuit including a local oscillator and operating method thereof

Номер патента: US20200022091A1. Автор: Jae-Hyuk Jang,Chul-Ho Kim,Jung-Woo Kim,Joon-Hee Lee,Sang-Wook Han. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-01-16.

Output control circuit for semiconductor apparatus and output driving circuit including the same

Номер патента: US20160191065A1. Автор: Da In IM,Jong Ho Jung. Владелец: SK hynix Inc. Дата публикации: 2016-06-30.

Current steering digital-to-analog converter and integrated circuit including the same

Номер патента: US20240171186A1. Автор: Seunghyun Oh,Wan Kim,Jiseon PAEK,Youngsea CHO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-05-23.

Current steering digital-to-analog converter and integrated circuit including the same

Номер патента: EP4089923A1. Автор: Seunghyun Oh,Wan Kim,Jiseon PAEK,Youngsea CHO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-11-16.

Redistribution layer and integrated circuit including redistribution layer

Номер патента: US12021046B2. Автор: Carmela Cupeta,Paolo Colpani,Samuele Sciarrillo,Ivan Venegoni,Francesco Maria Pipia,Simone BOSSI. Владелец: STMICROELECTRONICS SRL. Дата публикации: 2024-06-25.

Latch circuit and flip-flop circuit including the same

Номер патента: US20130307595A1. Автор: Kang-Youl Lee,Ja-Beom Koo,Don-Hyun Choi. Владелец: SK hynix Inc. Дата публикации: 2013-11-21.

Gain circuit including ndr and method

Номер патента: WO2003023952A1. Автор: Vijay Nair,Jonathan Lewis,Nada El-Zein,Mandar Deshpande. Владелец: Motorola, Inc., A Corporation Of The State Of Delaware. Дата публикации: 2003-03-20.

Integrated circuits including customization bits

Номер патента: US20220274399A1. Автор: Michael W. Cumbie,James Michael Gardner,Scott A. Linn. Владелец: Hewlett Packard Development Co LP. Дата публикации: 2022-09-01.

Integrated circuits including customization bits

Номер патента: US20210229426A1. Автор: Michael W. Cumbie,James Michael Gardner,Scott A. Linn. Владелец: Hewlett Packard Development Co LP. Дата публикации: 2021-07-29.

Integrated circuits including customization bits

Номер патента: AU2019428714A1. Автор: Michael W. Cumbie,James Michael Gardner,Scott A. Linn. Владелец: Hewlett Packard Development Co LP. Дата публикации: 2021-09-30.

Electronic circuits including diode-connected bipolar junction transistors

Номер патента: US20170025409A1. Автор: Hyun Min Song. Владелец: SK hynix Inc. Дата публикации: 2017-01-26.

Voltage boosting circuit including capacitor with reduced parasitic capacitance

Номер патента: EP1084501A1. Автор: Göran AstraZeneca R&D Lund MARNFELDT. Владелец: AstraZeneca AB. Дата публикации: 2001-03-21.

Comparator providing offset calibration and integrated circuit including comparator

Номер патента: US11509298B2. Автор: Yong Lim,Jaehoon Lee,Seunghyun Oh,Wan Kim,Barosaim Sung. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-11-22.

Integrated circuit including at least one nano-ridge transistor

Номер патента: US20200075750A1. Автор: Robert Langer,Niamh Waldron,Bernardette Kunert. Владелец: Interuniversitair Microelektronica Centrum vzw IMEC. Дата публикации: 2020-03-05.

Coil structure, power factor correction circuit including the coil structure, and power supply including the power factor correction circuit

Номер патента: EP4095871B1. Автор: Chang Yong Kwon,Dong Kyun Ryu,Yun Sic BANG. Владелец: Solum Co Ltd. Дата публикации: 2024-07-24.

Voltage boosting circuit including capacitor with reduced parasitic capacitance

Номер патента: WO1999050862A1. Автор: Göran MARNFELDT. Владелец: AstraZeneca AB. Дата публикации: 1999-10-07.

Production method for patterned organic film, production apparatus for patterned organic film, organic semiconductor device produced by same, and integrated circuit including organic semiconductor device

Номер патента: US20230165123A1. Автор: Mari Sasaki,Junichi Takeya,Shunichiro Watanabe,Tatsuyuki MAKITA. Владелец: University of Tokyo NUC. Дата публикации: 2023-05-25.

Electrical stimulus treatment method with circuit including allergen

Номер патента: WO2016044893A1. Автор: Garry Hilton BRIGHT. Владелец: Noosa Natural Vet Pty Ltd. Дата публикации: 2016-03-31.

Voltage boosting circuit including capacitor with reduced parasitic capacitance

Номер патента: US20010043114A1. Автор: Göran MARNFELDT. Владелец: Astra AB. Дата публикации: 2001-11-22.

Deadlock recovery circuit and deadlock recovery method, and pll circuit including the same

Номер патента: US20240235562A1. Автор: Chel Ho Chung,Gil Sung ROH. Владелец: MagnaChip Semiconductor Ltd. Дата публикации: 2024-07-11.

Diode-connected bipolar junction transistors and electronic circuits including the same

Номер патента: US9490251B2. Автор: Hyun Min Song. Владелец: SK hynix Inc. Дата публикации: 2016-11-08.

Diode-connected bipolar junction transistors and electronic circuits including the same

Номер патента: US20150228643A1. Автор: Hyun Min Song. Владелец: SK hynix Inc. Дата публикации: 2015-08-13.

Coil structure, power factor correction circuit including the coil structure, and power supply including the power factor correction circuit

Номер патента: EP4095871C0. Автор: Chang Yong Kwon,Dong Kyun Ryu,Yun Sic BANG. Владелец: Solum Co Ltd. Дата публикации: 2024-07-24.

Transmission device serially resetting each circuit included therein

Номер патента: US20070177516A1. Автор: Takashi Nakajima,Kazumaro Takaiwa,Kazuaki Kobayashi,Masahiro Agata,Yuichi Kotaki,Yoshihisa Funami. Владелец: Fujitsu Ltd. Дата публикации: 2007-08-02.

Integrated circuit including a stressed dielectric layer with stable stress

Номер патента: US20110316085A1. Автор: Huang Liu,Wei Lu,Luona Goh,Jeff Shu. Владелец: GLOBALFOUNDRIES SINGAPORE PTE LTD. Дата публикации: 2011-12-29.

Complementary clock gate and low power flip-flop circuit including same

Номер патента: US20220131533A1. Автор: Yoon Myung LEE,Gi Cheol SHIN. Владелец: Sungkyunkwan University Research and Business Foundation. Дата публикации: 2022-04-28.

Method and system for short to ground protection for a circuit including a FET device

Номер патента: US12081203B2. Автор: Chandrakumar D. Kulkarni. Владелец: Horizon Global Americas Inc. Дата публикации: 2024-09-03.

Pixel circuit including two comparator circuits for event detection and image sensor

Номер патента: WO2024194001A1. Автор: RAPHAEL Berner,Massimo Zannoni. Владелец: Sony Advanced Visual Sensing AG. Дата публикации: 2024-09-26.

An integrated circuit including a stressed dielectric layer with stable stress

Номер патента: SG175578A1. Автор: Huang Liu,Wei Lu,Shu Jeff,Goh Luona. Владелец: Globalfoundries Sg Pte Ltd. Дата публикации: 2011-11-28.

Transistor circuits including fringeless transistors and method of making the same

Номер патента: US12094944B2. Автор: Hiroyuki Ogawa,Hiroshi Nakatsuji,Dai Iwata,Eiichi Fujikura. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-09-17.

Gallium nitride integrated circuits including non-gold-based metallic materials

Номер патента: US12087713B2. Автор: James G. Fiorenza,Puneet Srivastava,Daniel Piedra,Andrew Proudman,Kenneth Flanders,Denis Michael Murphy,Leslie P. Green,Peter R. Stubler. Владелец: Analog Devices Inc. Дата публикации: 2024-09-10.

Quasi-resonant operation of a power conversion circuit including switches symmetrically arranged about a transformer

Номер патента: US09948192B2. Автор: Masanori Ishigaki,Jongwon Shin. Владелец: Toyota Motor Engineering and Manufacturing North America Inc. Дата публикации: 2018-04-17.

Switching circuit including serially connected transistors for reducing transient current at time of turning off, and power supply circuit provided therewith

Номер патента: US09935551B2. Автор: Takeshi Shiomi,Hiroshi Iwata,Akihide Shibata,Hiroki Igarashi,Shuji WAKAIKI,Kohtaroh Kataoka. Владелец: Sharp Corp. Дата публикации: 2018-04-03.

Clock data recovery circuit, integrated circuit including the same, and clock data recovery method

Номер патента: US09887831B2. Автор: Kyung-Hoon Kim,Kyu-Young Kim,Myeong-Jae Park,Sung-Eun Lee,Woo-Yeol SHIN,Han-Kyu Chi. Владелец: SK hynix Inc. Дата публикации: 2018-02-06.

Electronic circuits including diode-connected bipolar junction transistors

Номер патента: US09806073B2. Автор: Hyun Min Song. Владелец: SK hynix Inc. Дата публикации: 2017-10-31.

Insulated power supply apparatus applied to power converter circuit including series connections of upper and lower arm switching elements

Номер патента: US09712038B2. Автор: Tsuneo Maebara,Junichi Fukuta,Yusuke Shindo,Syun Miyauchi. Владелец: Denso Corp. Дата публикации: 2017-07-18.

Buck-boost converters and power management integrated circuits including the same

Номер патента: US09705401B2. Автор: Ryotaro Kudo,Min-Soo Cho,Dong-Jin Keum,Jae-Yeol HAN,Il-Young Sohn. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-07-11.

Control voltage adjusting circuit, feedback signal generating circuit, and control circuit including the same

Номер патента: US09614450B2. Автор: Ki Hong Kim,Byoung Woo Ryu,Jung Woo Choi. Владелец: Solum Co Ltd. Дата публикации: 2017-04-04.

Gate driving circuit including a temperature detection circuit for reducing switching loss and switching noise

Номер патента: US09608618B2. Автор: Takuya Sakai,Hiroshi Nakatake. Владелец: Mitsubishi Electric Corp. Дата публикации: 2017-03-28.

Cells including at least one fin field effect transistor and semiconductor integrated circuits including the same

Номер патента: US09576978B2. Автор: Sang-hoon BAEK,Sang-Kyu Oh. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-02-21.

Diode-connected bipolar junction transistors and electronic circuits including the same

Номер патента: US09490251B2. Автор: Hyun Min Song. Владелец: SK hynix Inc. Дата публикации: 2016-11-08.

Circuit including a transformer for driving a semiconductor switching element

Номер патента: US09455704B2. Автор: Bernhard Strzalkowski,Jens Barrenscheen,Marcus Nuebling. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2016-09-27.

Radio-frequency integrated circuits including inductors and methods of fabricating the same

Номер патента: US09449916B2. Автор: Jung Hun Choi. Владелец: SK hynix Inc. Дата публикации: 2016-09-20.

SEMICONDUCTOR PACKAGE INCLUDING TEST BUMPS

Номер патента: US20220148994A1. Автор: KIM Taehyeong,Baek Seungduk,Kang Hyeongmun. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2022-05-12.

SEMICONDUCTOR PACKAGE INCLUDING TEST BUMPS

Номер патента: US20210175134A1. Автор: KIM Taehyeong,Baek Seungduk,Kang Hyeongmun. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2021-06-10.

CIRCUIT INCLUDING DUAL POWER CONVERTERS AND AN INDUCTOR AND A METHOD OF USING AN ELECTRONIC DEVICE INCLUDING A CIRCUIT INCLUDING DUAL POWER CONVERTERS AND AN INDUCTOR

Номер патента: US20170222555A1. Автор: Loechelt Gary H.. Владелец: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC. Дата публикации: 2017-08-03.

SYSTEMS AND METHODS FOR PERITONEAL DIALYSIS HAVING POINT OF USE DIALYSIS FLUID PREPARATION INCLUDING TESTING THEREOF

Номер патента: US20170319769A1. Автор: Wellings Anders,Jansson Olof,Wieslander Anders. Владелец: . Дата публикации: 2017-11-09.

SEMICONDUCTOR DEVICE INCLUDING TEST STRUCTURE

Номер патента: US20190326187A1. Автор: Kim Hyun Jin,SAGONG HYUN CHUL,PAE Sang Woo,CHOI Ki Hyun,PARK June Kyun. Владелец: . Дата публикации: 2019-10-24.

Methodof producing an object including testing and/or analysing of object

Номер патента: EP1815936B1. Автор: Daniel Clark,David Cameron Wright. Владелец: Rolls Royce PLC. Дата публикации: 2009-11-11.

Lancet system including test strips and cassettes

Номер патента: CN1703163A. Автор: 让·P·吉罗. Владелец: CSP Technologies Inc. Дата публикации: 2005-11-30.

Method of conveying engine by means of conveying line including test line

Номер патента: JPS59209974A. Автор: Naoyuki Kiuchi,Shigeru Kanefuji,木内　尚之,金藤　茂. Владелец: Daifuku Machinery Works Ltd. Дата публикации: 1984-11-28.

Semiconductor package including test line structure

Номер патента: US20220344225A1. Автор: Chia-Ping Lai,Tsung-Yang Hsieh,Chien-Chang Lee,Wen-Chung Lu,Cheng-Kang Huang,Mei-Shih Kuo,Alice Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-10-27.

Method of fabricating a vertical quadruple conduction channel insulated gate transistor, and an integrated circuit including this kind of transistor

Номер патента: US20020163027A1. Автор: Thomas Skotnicki,Emmanuel Josse. Владелец: STMICROELECTRONICS SA. Дата публикации: 2002-11-07.

Lancet system including test strips and cassettes

Номер патента: WO2004034024A2. Автор: Jean-Pierre Giraud. Владелец: CSP Technologies, Inc.. Дата публикации: 2004-04-22.

Electronic impedance circuit including a compensation arrangement for d.c. offset

Номер патента: US4520282A. Автор: Kazuo Watanabe,Fumihiko Yokogawa,Akira Haeno,Yuichi Ohkubo. Владелец: Pioneer Electronic Corp. Дата публикации: 1985-05-28.

Systems and methods for peritoneal dialysis having point of use dialysis fluid preparation including testing thereof

Номер патента: CA3022949A1. Автор: Anders Wellings,Olof Jansson,Anders Wieslander. Владелец: GAMBRO LUNDIA AB. Дата публикации: 2017-11-09.

Signal combining circuit, signal processing circuit including the signal combining circuit, stereophonic audio reproduction system including the signal processing circuit, and an audio-visual reproduction system including the stereophonic audio reproduction system

Номер патента: KR100364333B1. Автор: 로날두스마리아아아르츠. Владелец: 코닌클리케 필립스 일렉트로닉스 엔.브이.. Дата публикации: 2003-02-07.

Integrated circuit device including testing element

Номер патента: JPS59114837A. Автор: Takamasa Suzuki,隆昌 鈴木. Владелец: Nippon Electric Co Ltd. Дата публикации: 1984-07-03.

Digitally tuned circuit including switching of bank capacitors between plural tuned circuits

Номер патента: US4138654A. Автор: Gabriel J. Luhowy. Владелец: HARRIS CORP. Дата публикации: 1979-02-06.

Safety system for joiner robot to prevent collision with other objects includes test gas pipe and sensor monitoring gas pressure or rate of flow to send switch-off signal when pressure drops or flow rate rises

Номер патента: DE202006014324U1. Автор: . Владелец: DINSE GmbH. Дата публикации: 2006-11-23.

Chip and chip including test structure

Номер патента: CN103579196B. Автор: U.施马尔斯鲍尔,M.孙德尔. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2017-10-03.

Frequency selective circuit including a twin-t notch filter

Номер патента: US3745376A. Автор: A Mcintosh. Владелец: TEL TONE CORP. Дата публикации: 1973-07-10.

System for peritoneal dialysis having point of use dialysis fluid preparation including testing thereof

Номер патента: EP4218848A1. Автор: Anders Wellings,Olof Jansson,Anders Wieslander. Владелец: GAMBRO LUNDIA AB. Дата публикации: 2023-08-02.

Integrated circuit including trench capacitor

Номер патента: US20230261039A1. Автор: Chia-Ping Lai,Chung-Chuan Tseng,Wen-Feng Kuo. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-08-17.

Integrated circuit including trench capacitor

Номер патента: US20220271119A1. Автор: Chia-Ping Lai,Chung-Chuan Tseng,Wen-Feng Kuo. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-08-25.

Method for fabricating an integrated circuit including a nmos transistor and a pmos transistor

Номер патента: US20200203161A1. Автор: Nicolas Posseme,Shay REBOH,Fabrice Nemouchi,Cyrille Le Royer,Loïc Gaben. Владелец: Commissariat a lEnergie Atomique et aux Energies Alternatives CEA. Дата публикации: 2020-06-25.

Method of improving linearity of amplifier circuit including magnetically coupled feedback loop and dc bias current adjustment without impacting amplifier gain

Номер патента: EP4218134A1. Автор: Mats Carlsson,Ali Fard. Владелец: QuantalRF AG. Дата публикации: 2023-08-02.

Method of improving linearity of amplifier circuit including magnetically coupled feedback loop and dc bias current adjustment without impacting amplifier gain

Номер патента: WO2022067208A1. Автор: Mats Carlsson,Ali Fard. Владелец: QuantalRF AG. Дата публикации: 2022-03-31.

Method of improving linearity of amplifier circuit including magnetically coupled feedback loop and dc bias current adjustment without impacting amplifier gain

Номер патента: US20220102070A1. Автор: Mats Carlsson,Ali Fard. Владелец: QuantalRF AG. Дата публикации: 2022-03-31.

Circuit including supercapacitor for supplying power to leak detection circuitry and controller in water heater

Номер патента: WO2024026473A1. Автор: Hyunki Kim. Владелец: Ademco Inc.. Дата публикации: 2024-02-01.

Integrated circuit including a dielectric waveguide with a cavity therein surrounded by a conductive coating forming a wall for the cavity

Номер патента: US11764452B2. Автор: Henning Braunisch,Telesphor Kamgaing,Adel A. Elsherbini,Johanna M. Swan,Georgios Dogiamis. Владелец: Intel Corp. Дата публикации: 2023-09-19.

Heterolithic integrated circuits including integrated devices formed on semiconductor materials of different elemental composition

Номер патента: US11817450B2. Автор: Wayne Mack Struble,Timothy E. Boles. Владелец: MACOM Technology Solutions Holdings Inc. Дата публикации: 2023-11-14.

High potential discharge control circuit including a resistive material coated electrode for induction-charging electrostatic spraying system

Номер патента: CA1125358A. Автор: James E. Sickles,John W. Du. Владелец: PPG Industries Inc. Дата публикации: 1982-06-08.

DISPLAY PANEL INCLUDING TEST PAD UNIT AND FLAT PANEL DISPLAY APPARATUS INCLUDING THE DISPLAY PANEL

Номер патента: US20120327056A1. Автор: . Владелец: Samsung Mobile Display Co., Ltd.. Дата публикации: 2012-12-27.

CHIP ON FILM PACKAGE INCLUDING TEST PADS AND SEMICONDUCTOR DEVICES INCLUDING THE SAME

Номер патента: US20130175528A1. Автор: Kim Seung-Hwan,Ha Jeong-Kyu,Han Sang-Uk,Kwon Young-Shin,Lee Kwan-Jai. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2013-07-11.

SEMICONDUCTOR DEVICE INCLUDING TEST CIRCUIT AND BURN-IN TEST METHOD

Номер патента: US20130107649A1. Автор: CHO JIn Hee. Владелец: HYNIX SEMICONDUCTOR INC.. Дата публикации: 2013-05-02.

Chip carrier tape having number marking of test pads

Номер патента: TW200616134A. Автор: Tung-Bao Lu,Sodium Lin. Владелец: Chipmos Technologies Bermuda. Дата публикации: 2006-05-16.

SEMICONDUCTOR PACKAGE HAVING TEST PADS ON TOP AND BOTTOM SUBSTRATE SURFACES AND METHOD OF TESTING SAME

Номер патента: US20120105089A1. Автор: . Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2012-05-03.

Semiconductor Device with Cross-shaped Bumps and Test Pads Alignment

Номер патента: US20120126840A1. Автор: . Владелец: . Дата публикации: 2012-05-24.

DIE TESTING USING TOP SURFACE TEST PADS

Номер патента: US20120182033A1. Автор: Whetsel Lee D.,Antley Richard L.. Владелец: TEXAS INSTRUMENTS INCORPORATED. Дата публикации: 2012-07-19.

TEST PAD STRUCTURE FOR REUSE OF INTERCONNECT LEVEL MASKS

Номер патента: US20130001552A1. Автор: . Владелец: INTERNATIONAL BUSINESS MACHINES CORPORATION. Дата публикации: 2013-01-03.

Semiconductor Laser with Test Pads

Номер патента: US20130064500A1. Автор: Olson Scott E.. Владелец: SEAGATE TECHNOLOGY LLC. Дата публикации: 2013-03-14.

Collecting Technique And Device To Concentrate A Blood Sample On A Test Pad

Номер патента: US20130103069A1. Автор: Roe Steven N.. Владелец: ROCHE DIAGNOSTICS OPERATIONS, INC.. Дата публикации: 2013-04-25.

APPARATUS AND METHOD FOR TESTING PAD CAPACITANCE

Номер патента: US20130154677A1. Автор: Muljono Harry,SUN Linda K.. Владелец: . Дата публикации: 2013-06-20.

ORGANIC LIGHT EMITTING DISPLAY DEVICE HAVING TEST PAD

Номер патента: US20130155037A1. Автор: Kim Keum-Nam,Kim Na-Young. Владелец: . Дата публикации: 2013-06-20.

Methods and Apparatus for Testing Pads on Wafers

Номер патента: US20130221353A1. Автор: Wang Jen-Pan,Yang Chung-Yuan,Huang Jiun-Jie. Владелец: Taiwan Semiconductor Manufacturing Company, Ltd.. Дата публикации: 2013-08-29.

Liquid crystal display panel with array test pad and source driving circuit being arranged at different sides

Номер патента: CN102385828A. Автор: 余建城. Владелец: AU OPTRONICS CORP. Дата публикации: 2012-03-21.

Liquid crystal display panel with array test pad and source driving circuit being arranged at different sides

Номер патента: CN102385828B. Автор: 余建城. Владелец: AU OPTRONICS CORP. Дата публикации: 2014-01-01.

Splitting experiment replacement splitting test pad strip device

Номер патента: CN210571694U. Автор: 彭刚,程卓群. Владелец: China Three Gorges University CTGU. Дата публикации: 2020-05-19.

Package for integrated circuit with test pad

Номер патента: JP2812806B2. Автор: 順一 鷲野. Владелец: NGK Spark Plug Co Ltd. Дата публикации: 1998-10-22.

Visual and Audio Warning System Including Test Ledger for Automated Door

Номер патента: US20130009785A1. Автор: . Владелец: . Дата публикации: 2013-01-10.

Бесплатный поиск патентной информации. Построение патентных ландшафтов и отчетов.

Главная
Проекты и услуги
Контакты

© 2021-2022 - All Rights Reserved - разработано Ecoruspace.me.