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Superconducting circuit including superconducting qubits

Номер патента: US11489101B2
Опубликовано: 01-11-2022
Автор(ы): Hao Deng
Принадлежит: Alibaba Group Holding Ltd
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Номер патента: US20230015367A1. Автор: Sidharth Rastogi,RAHEEL Azmat,Jae-Seok Yang,Chul-Hong Park,Kwan-Young Chun. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-01-19.

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Номер патента: US20200057830A1. Автор: Sidharth Rastogi,RAHEEL Azmat,Jae-Seok Yang,Chul-Hong Park,Kwan-Young Chun. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-02-20.

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Номер патента: US20220092459A1. Автор: GUMANN PATRYK,Olivadese Salvatore Bernardo,Bogorin Daniela Florentina,Bronn Nicholas Torleiv,Hart Sean. Владелец: . Дата публикации: 2022-03-24.

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Номер патента: US20210234085A1. Автор: Gill Douglas M.,Orcutt Jason S.,CHOW JERRY M.,Adiga Vivekananda P.,Sandberg Martin O.. Владелец: . Дата публикации: 2021-07-29.

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Номер патента: US20200287119A1. Автор: Black Charles T.,Liu Mingzhao. Владелец: . Дата публикации: 2020-09-10.

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Номер патента: KR20230006013A. Автор: 아론 핀크,에이프릴 카니올,존 블레어. Владелец: 인터내셔널 비지네스 머신즈 코포레이션. Дата публикации: 2023-01-10.

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Номер патента: US20240234294A1. Автор: Jungho DO,Jisu YU,Sungyup JUNG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-11.

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Номер патента: US20240243117A1. Автор: Hayoung Kim,Kibum Kim,Eunhee Choi,Yongeun CHO,Hyunjeong ROH,Seonkyeong KIM,Moogyu Bae. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-18.

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Номер патента: EP4401134A1. Автор: Jungho DO,Jisu YU,Sungyup JUNG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-17.

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Номер патента: EP4407682A1. Автор: Hayoung Kim,Kibum Kim,Eunhee Choi,Yongeun CHO,Hyunjeong ROH,Seonkyeong KIM,Moogyu Bae. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-31.

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Номер патента: US11755809B2. Автор: Sanghoon Baek,Jonghoon Jung,Jaewoo SEO,Jisu YU,Hyeongyu You. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-09-12.

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Номер патента: US11042686B2. Автор: Jong-Hoon Jung,Tae-Joong Song,Jung-Ho Do,Ji-Su Yu,Seung-Young Lee,Jae-Boong Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-06-22.

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Номер патента: US20200402969A1. Автор: Jung-Ho Do. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-12-24.

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Номер патента: US8952425B2. Автор: Michael C. Smayling,Scott T. Becker. Владелец: Tela Innovations Inc. Дата публикации: 2015-02-10.

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Номер патента: US20230378156A1. Автор: Minjae Jeong,Jungho DO,Jaehee Cho,Jisu YU,Geonwoo Nam,Hyeongyu You. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-11-23.

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Номер патента: US20240094987A1. Автор: Byoung Gon KANG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-03-21.

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Номер патента: US20150242555A1. Автор: Yi Zou,Azat Latypov,Tamer Coskun,Wei-Long Wang. Владелец: Globalfoundries Inc. Дата публикации: 2015-08-27.

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Номер патента: US20210165946A1. Автор: Kwanyoung Chun,Jinwoo Jeong,Jungkyu CHAE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-06-03.

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Номер патента: US11868691B2. Автор: Sidharth Rastogi,RAHEEL Azmat,Jae-Seok Yang,Chul-Hong Park,Kwan-Young Chun. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-01-09.

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Номер патента: US20240105710A1. Автор: Minjae Jeong,Jungho DO,Jaehee Cho,Jisu YU,Geonwoo Nam,Hyeongyu You. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-03-28.

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Номер патента: US20140225165A1. Автор: Ramachandran Muralidhar,Daniel C. Edelstein,Stephen M. Gates,Kailash Gopalakrishnan. Владелец: International Business Machines Corp. Дата публикации: 2014-08-14.

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Номер патента: US20230343788A1. Автор: Jin Young Lim,Hyeon Gyu YOU,Gi Young Yang,Ga Room KIM,In Gyum KIM,Hak Chul JUNG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-10-26.

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Номер патента: US20240169137A1. Автор: Wootae Kim,Juyeon KIM,Jungho DO,Seungyoung Lee,Jisu YU,Hyeongyu You. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-05-23.

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Номер патента: US20200243502A1. Автор: Min-Su Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-07-30.

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Номер патента: US20220005801A1. Автор: Sungok Lee,SangDo Park,Dayeon CHO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-01-06.

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Номер патента: WO2020216544A1. Автор: Salvatore Bernardo Olivadese. Владелец: Ibm United Kingdom Limited. Дата публикации: 2020-10-29.

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Номер патента: US20210006234A1. Автор: Salvatore Bernardo Olivadese. Владелец: International Business Machines Corp. Дата публикации: 2021-01-07.

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Номер патента: US20200336134A1. Автор: Salvatore Bernardo Olivadese. Владелец: International Business Machines Corp. Дата публикации: 2020-10-22.

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Номер патента: US12041856B2. Автор: Isaac Lauer,Karthik Balakrishnan,Jeffrey Sleight,David James Frank. Владелец: International Business Machines Corp. Дата публикации: 2024-07-16.

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Номер патента: US20240282495A1. Автор: Jason Lee,Kenneth Reneris,Matus Lipka,Jamie Kuesel,Paige FREDERICK. Владелец: Microsoft Technology Licensing LLC. Дата публикации: 2024-08-22.

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Номер патента: US20230380301A1. Автор: Daniel Robert Queen. Владелец: Northrop Grumman Systems Corp. Дата публикации: 2023-11-23.

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Номер патента: US11581475B2. Автор: Chunqing Deng,Ran GAO,Jingwei Zhou. Владелец: Alibaba Group Holding Ltd. Дата публикации: 2023-02-14.

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Номер патента: US20210367131A1. Автор: Chunqing Deng,Ran GAO,Jingwei Zhou. Владелец: Alibaba Group Holding Ltd. Дата публикации: 2021-11-25.

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Номер патента: US4802080A. Автор: Burt J. Bossi,Mark A. Eberhart. Владелец: American Telephone and Telegraph Co Inc. Дата публикации: 1989-01-31.

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Номер патента: US20220149501A1. Автор: Hyeokshin Kwon,Insu Jeon,Taehwan JANG,Jaeho SHIN,Jaehyeong LEE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-05-12.

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Номер патента: WO2019222514A1. Автор: Andrew J. Berkley,Jed D. Whittaker,Loren J. Swenson,Emile M. Hoskinson,Mark H. Volkmann,George E.G. Sterling. Владелец: D-WAVE SYSTEMS INC.. Дата публикации: 2019-11-21.

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Номер патента: IL298514B1. Автор: Blair John,Finck Aaron,Carniol April. Владелец: Carniol April. Дата публикации: 2024-07-01.

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Номер патента: IL303393A. Автор: Juha Hassel,Jani Tuorila,Mikko M?Tt?Nen,Eric Hyypp?. Владелец: Eric Hyypp?. Дата публикации: 2023-08-01.

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Номер патента: EP4123734B1. Автор: Valerii VINOKOUR,Nicola Poccia,Francesco Tafuri. Владелец: Terra Quantum AG. Дата публикации: 2024-02-28.

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Номер патента: US20240297651A1. Автор: Jeffrey S. Hall,Jonathan D. Egan,Joseph A. Payne. Владелец: Northrop Grumman Systems Corp. Дата публикации: 2024-09-05.

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Номер патента: US11777478B2. Автор: Patryk GUMANN,Salvatore Bernardo Olivadese,Sean Hart,April Carniol. Владелец: International Business Machines Corp. Дата публикации: 2023-10-03.

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Номер патента: US11877522B2. Автор: Kenneth Reneris,Mark G. Kupferschmidt,Janet L Schneider,Paul Accisano. Владелец: Microsoft Technology Licensing LLC. Дата публикации: 2024-01-16.

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Номер патента: US20220180038A1. Автор: Kenneth Reneris,Janet L. Schneider,Mark G. Kupferschmidt,Paul Accisano. Владелец: Microsoft Technology Licensing LLC. Дата публикации: 2022-06-09.

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Номер патента: EP3984132A1. Автор: Kenneth Reneris,Janet L. Schneider,Mark G. Kupferschmidt,Paul Accisano. Владелец: Microsoft Technology Licensing LLC. Дата публикации: 2022-04-20.

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Номер патента: AU2020316890A1. Автор: Kenneth Reneris,Janet L. Schneider,Mark G. Kupferschmidt,Paul Accisano. Владелец: Microsoft Technology Licensing LLC. Дата публикации: 2022-01-06.

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Номер патента: US20220253673A1. Автор: Kwang Il Oh. Владелец: Electronics and Telecommunications Research Institute ETRI. Дата публикации: 2022-08-11.

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Номер патента: US11861483B2. Автор: Jae-Jin Lee,Sung Eun Kim,Kwang Il Oh,In Gi Lim,Seong Mo Park,Young Hwan Bae. Владелец: Electronics and Telecommunications Research Institute ETRI. Дата публикации: 2024-01-02.

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Номер патента: US20090058402A1. Автор: Jürgen Zimmer,Klemens Prügl. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2009-03-05.

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Номер патента: IL308661A. Автор: Juha Hassel,Johannes HEINSOO,Caspar Ockeloen-Korppi,Jukka R?BIN?. Владелец: Jukka R?BIN?. Дата публикации: 2024-01-01.

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Номер патента: GB861280A. Автор: . Владелец: International Business Machines Corp. Дата публикации: 1961-02-15.

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Номер патента: EP4327231A1. Автор: Jason Lee,Kenneth Reneris,Matus Lipka,Jamie Kuesel,Paige FREDERICK. Владелец: Microsoft Technology Licensing LLC. Дата публикации: 2024-02-28.

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Номер патента: WO2021015856A1. Автор: Kenneth Reneris,Janet L. Schneider,Mark G. Kupferschmidt,Paul Accisano. Владелец: Microsoft Technology Licensing, LLC. Дата публикации: 2021-01-28.

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Номер патента: EP3987428A1. Автор: Kenneth Reneris,Janet L. Schneider,Mark G. Kupferschmidt,Paul Accisano. Владелец: Microsoft Technology Licensing LLC. Дата публикации: 2022-04-27.

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Номер патента: AU2020316886A1. Автор: Kenneth Reneris,Janet L. Schneider,Mark G. Kupferschmidt,Paul Accisano. Владелец: Microsoft Technology Licensing LLC. Дата публикации: 2022-01-06.

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Номер патента: US20220216878A1. Автор: Gerald Dale Morrison,Grant Howard McGibney,Daniel Keith Van Ostrand,Patrick Troy Gray. Владелец: Sigmasense LLC. Дата публикации: 2022-07-07.

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Номер патента: US11423851B2. Автор: Kyuik CHO,Jaejung Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-08-23.

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Номер патента: US20210201835A1. Автор: Kyuik CHO,Jaejung Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-07-01.

Integrated circuit including an array of memory cells and method

Номер патента: US20100027325A1. Автор: Lothar Risch,Peter Baars,Thomas Happ,Stefan Tegen,Klaus Muemmler,Ulrike Gruening-Von Schwerin. Владелец: Qimonda AG. Дата публикации: 2010-02-04.

Security circuit including dual encoder and endecryptor including the security circuit

Номер патента: US20210264061A1. Автор: Hyunil Kim,Jonghoon Shin,Jisu Kang,Jaehyeok Kim,Hyesoo LEE,Hongmook Choi. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-08-26.

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Номер патента: US20200328746A1. Автор: Jongwoo Kim,Minsu Kim,Chanhee Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-10-15.

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Номер патента: US20200373936A1. Автор: Minsung Kim,Jungmoon Kim,Sanho Byun. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-11-26.

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Номер патента: US20240235560A1. Автор: Hyun Chul Lee. Владелец: SK hynix Inc. Дата публикации: 2024-07-11.

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Номер патента: US20180337672A1. Автор: Jin-woo Kim,Yong-joo SONG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-11-22.

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Номер патента: US20240310100A1. Автор: Yao Wang,Hanjie Yin. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2024-09-19.

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Номер патента: US11769450B2. Автор: MoonBong Song,Byong Deok Choi,Yong Duck Kim,Jeongmin Moon,KiSeok CHANG,Jihwan JUNG,SoonShin JUNG,Yong Sang Yoo. Владелец: Industry University Cooperation Foundation IUCF HYU. Дата публикации: 2023-09-26.

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Номер патента: US11811364B2. Автор: Jaehoon Lee,Seunghyun Oh,Jaehong Jung,Seungjin Kim,Joomyoung Kim,Jinhyeon LEE,Gihyeok HA,Yelim YOUN. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-11-07.

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Номер патента: EP4113839A1. Автор: Jaehoon Lee,Seunghyun Oh,Seungjin Kim,Joomyoung Kim,Jinhyeon LEE,Gihyeok HA,Yelim YOUN,Jaehong Jaehong JUNG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-01-04.

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Номер патента: US20240030870A1. Автор: Jaehoon Lee,Seunghyun Oh,Jaehong Jung,Seungjin Kim,Joomyoung Kim,Gihyeok HA,Yelim YOUN,Jihnyeon Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-01-25.

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Номер патента: US20230267998A1. Автор: Pirooz Parvarandeh,Periyapatna G. Venkatesh. Владелец: GlobalFoundries US Inc. Дата публикации: 2023-08-24.

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Номер патента: US11740750B2. Автор: Minsoo Kim. Владелец: Samsung Display Co Ltd. Дата публикации: 2023-08-29.

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Номер патента: US11984160B2. Автор: Pirooz Parvarandeh,Periyapatna G. Venkatesh. Владелец: GlobalFoundries US Inc. Дата публикации: 2024-05-14.

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Номер патента: US20190057179A1. Автор: Bong-Hyun Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-02-21.

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Номер патента: US11777514B2. Автор: Minsung Kim,Jungmoon Kim,Sanho Byun. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-10-03.

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Номер патента: EP3742267A1. Автор: Minsung Kim,Jungmoon Kim,Sanho Byun. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-11-25.

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Номер патента: US11936386B2. Автор: Deog-Kyoon Jeong,Yongjae Lee,Jiheon Park,Soyeong SHIN. Владелец: SK hynix Inc. Дата публикации: 2024-03-19.

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Номер патента: US11762487B2. Автор: Shigeru Yamashita,Masamitsu Ito,Toshihiko Horie. Владелец: Wacom Co Ltd. Дата публикации: 2023-09-19.

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Номер патента: US20230376133A1. Автор: Shigeru Yamashita,Masamitsu Ito,Toshihiko Horie. Владелец: Wacom Co Ltd. Дата публикации: 2023-11-23.

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Номер патента: US20230246637A1. Автор: Deog-Kyoon Jeong,Yongjae Lee,Jiheon Park,Soyeong SHIN. Владелец: SK hynix Inc. Дата публикации: 2023-08-03.

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Номер патента: US20210305315A1. Автор: Markus BRINK,Firat Solgun,Dongbing Shao. Владелец: International Business Machines Corp. Дата публикации: 2021-09-30.

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Номер патента: US11967961B2. Автор: Hyun Chul Lee. Владелец: SK hynix Inc. Дата публикации: 2024-04-23.

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Номер патента: US20200287540A1. Автор: XU Xiao,Luigi FRUNZIO,Michel Devoret,Shyam Shankar,W. Clarke Smith,Jayameenakshi Venkatraman,Lucas Verney,Mazyar Mirrahimi. Владелец: YALE UNIVERSITY. Дата публикации: 2020-09-10.

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Номер патента: US20210258010A9. Автор: XU Xiao,Luigi FRUNZIO,Michel Devoret,Shyam Shankar,W. Clarke Smith,Jayameenakshi Venkatraman,Lucas Verney,Mazyar Mirrahimi. Владелец: YALE UNIVERSITY. Дата публикации: 2021-08-19.

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Номер патента: US20210258010A9. Автор: XU Xiao,Luigi FRUNZIO,Michel Devoret,Shyam Shankar,W. Clarke Smith,Jayameenakshi Venkatraman,Lucas Verney,Mazyar Mirrahimi. Владелец: YALE UNIVERSITY. Дата публикации: 2021-08-19.

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Номер патента: US11910730B2. Автор: Jingwei Zhou,Wenlong YU,Hsiang-Sheng KU,Xiaohang Zhang. Владелец: Alibaba Group Holding Ltd. Дата публикации: 2024-02-20.

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Номер патента: EP4193395A1. Автор: Xiangsheng Gu,Jingwei Zhou,Wenlong YU,Xiaohang Zhang. Владелец: Alibaba Group Holding Ltd. Дата публикации: 2023-06-14.

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Номер патента: AU2021320137A1. Автор: Xiangsheng Gu,Jingwei Zhou,Wenlong YU,Xiaohang Zhang. Владелец: Alibaba Group Holding Ltd. Дата публикации: 2023-02-16.

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Номер патента: EP4228013A1. Автор: Jie Zheng,Liangliang Ma,Bing YOU,Nianci WANG,Wenshu LIU. Владелец: Origin Quantum Computing Technology Co Ltd. Дата публикации: 2023-08-16.

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Номер патента: WO2023224743A1. Автор: Daniel Robert Queen. Владелец: Northrop Grumman Systems Corporation. Дата публикации: 2023-11-23.

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Номер патента: US11937518B2. Автор: Daniel Robert Queen. Владелец: Northrop Grumman Systems Corp. Дата публикации: 2024-03-19.

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Номер патента: US20240312493A1. Автор: Taehyung Kim,Youngrok Park,Hoyoung Tang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-09-19.

Group iii nitride-based monolithic microwave integrated circuits including static random access memory blocks with associated addressing and buffering circuits

Номер патента: US20230361059A1. Автор: Jeremy Fisher. Владелец: Wolfspeed Inc. Дата публикации: 2023-11-09.

Integrated circuit including cell array and backside power rail

Номер патента: US20240172407A1. Автор: Taehyung Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-05-23.

Bandgap reference circuit including vertically stacked active SOI devices

Номер патента: US11309435B2. Автор: Timothy S. Miller,Peter P. Hang,Van Ton-That,Don Raymond Blackwell. Владелец: GlobalFoundries US Inc. Дата публикации: 2022-04-19.

Integrated circuit including memory cell and method of designing the same

Номер патента: US20220037339A1. Автор: Seunghan Park,Seunghun LEE,Hyejin Lee,Inhak LEE,Sangyeop BAECK. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-02-03.

Integrated circuit including vertical capacitors

Номер патента: EP3791428A1. Автор: Douglas T. Grider,Patrick R. Smith,Xiang-Zheng Bo. Владелец: Texas Instruments Inc. Дата публикации: 2021-03-17.

Vertical stacking of multiple integrated circuits including soi-based optical components

Номер патента: WO2006084237A9. Автор: Vipulkumar Patel,Kalpendu Shastri,John Fangman,Dave Piede. Владелец: Dave Piede. Дата публикации: 2006-11-09.

Integrated circuit including non-planar structure and waveguide

Номер патента: US20140205233A1. Автор: Thomas Schulz. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2014-07-24.

Integrated circuits including multi-layer conducting lines

Номер патента: US20210202373A1. Автор: Chan-Ho Lee,Tae-hyung Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-07-01.

Resistance device and current detection circuit including the resistance device

Номер патента: US20220189668A1. Автор: Kaoru Sakaguchi. Владелец: Ablic Inc. Дата публикации: 2022-06-16.

Display panel including extension portion, pixel circuit including voltage stabilizing sub-circuits and display apparatus

Номер патента: US11915645B2. Автор: Lu Yang,Pei Wang,Wentao Wang,Dawei Shi,Dongsheng ZHAO. Владелец: Chongqing BOE Display Technology Co Ltd. Дата публикации: 2024-02-27.

Resistance device and current detection circuit including the resistance device

Номер патента: US11948708B2. Автор: Kaoru Sakaguchi. Владелец: Ablic Inc. Дата публикации: 2024-04-02.

Integrated circuits including magnetic random access memory structures having reduced switching energy barriers for dual bit operation and methods for fabricating the same

Номер патента: US20190259809A1. Автор: Jaiswal Akhilesh,Ajey Poovannummoottil Jacob. Владелец: Globalfoundries Inc. Дата публикации: 2019-08-22.

Source Driving Integrated Circuits Including an Electrostatic Discharge Circuit and Related Layout Method

Номер патента: US20140301001A1. Автор: Young-Jin Cho,Hong-Yeon Kim,Youn-Ho Hwang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2014-10-09.

Integrated circuit including sensor structure, related method and design structure

Номер патента: US20140021469A1. Автор: Jeffrey P. Gambino,Edward C. Cooney, III,Zhong-Xiang He,Tom C. Lee. Владелец: International Business Machines Corp. Дата публикации: 2014-01-23.

Integrated circuit including three-dimensional memory device

Номер патента: US11856786B2. Автор: Yih Wang,Yu-Ming Lin,Sai-Hooi Yeong,Yi-Ching Liu,Bo-Feng YOUNG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-12-26.

Integrated circuit including three-dimensional memory device

Номер патента: US20240090231A1. Автор: Yih Wang,Yu-Ming Lin,Sai-Hooi Yeong,Yi-Ching Liu,Bo-Feng YOUNG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-03-14.

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Номер патента: US20220139442A1. Автор: Taemin CHOI,Seongook JUNG,Keonhee Cho. Владелец: Industry Academic Cooperation Foundation of Yonsei University. Дата публикации: 2022-05-05.

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Номер патента: EP4372797A1. Автор: Taehyung Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-05-22.

Integrated circuit including test circuit and method of manufacturing the same

Номер патента: US20230049110A1. Автор: Changho HAN,Mijeong Lim,Yuncheol Kim,Kwanghun Oh. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-02-16.

Integrated circuit including test circuit and method of manufacturing the same

Номер патента: US12000888B2. Автор: Changho HAN,Mijeong Lim,Yuncheol Kim,Kwanghun Oh. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-06-04.

Drive circuit including connection path selection sections and voltage generation section

Номер патента: US20160013393A1. Автор: Shuji Otsuka,Toshifumi Asanuma,Tadashi Kiyuna. Владелец: Seiko Epson Corp. Дата публикации: 2016-01-14.

Integrated circuit including efuse cell

Номер патента: US20220052058A1. Автор: Meng-Sheng CHANG,Yao-Jen Yang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-02-17.

Vertical stacking of multiple integrated circuits including soi-based optical components

Номер патента: WO2006084237A8. Автор: Vipulkumar Patel,Kalpendu Shastri,John Fangman,Dave Piede. Владелец: Dave Piede. Дата публикации: 2007-09-20.

Systems and methods for addressing devices in a superconducting circuit

Номер патента: US20240151782A1. Автор: Jed D. Whittaker,Loren J. Swenson,Emile M. Hoskinson,Mark H. Volkmann,George E.G. Sterling,Andrew J. Berley. Владелец: D Wave Systems Inc. Дата публикации: 2024-05-09.

Systems and methods for addressing devices in a superconducting circuit

Номер патента: US11879950B2. Автор: Andrew J. Berkley,Jed D. Whittaker,Loren J. Swenson,Emile M. Hoskinson,Mark H. Volkmann,George E. G. Sterling. Владелец: D Wave Systems Inc. Дата публикации: 2024-01-23.

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Номер патента: US20210192380A1. Автор: Duan Runyao,JIN Lijing. Владелец: . Дата публикации: 2021-06-24.

Mechanically tunable superconducting qubit

Номер патента: US10056540B2. Автор: David W. Abraham,Jerry M. Chow,Jay M. Gambetta,John A. Smolin. Владелец: International Business Machines Corp. Дата публикации: 2018-08-21.

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Номер патента: US20220036228A1. Автор: Lavoie Christian,Wymore Benjamin,Brink Markus,L. Sweet Jean. Владелец: . Дата публикации: 2022-02-03.

Low loss architecture for superconducting qubit circuits

Номер патента: GB2582527A. Автор: Rosenblatt Sami,Brink Markus,Corcoles-Gonzalez Antonio,Solgun Firat,Gambetta Jay. Владелец: International Business Machines Corp. Дата публикации: 2020-09-23.

Low loss architecture for superconducting qubit circuits

Номер патента: US20190165242A1. Автор: Markus BRINK,Jay M. Gambetta,Sami Rosenblatt,Firat Solgun,Antonio Corcoles-Gonzalez. Владелец: International Business Machines Corp. Дата публикации: 2019-05-30.

Low loss architecture for superconducting qubit circuits

Номер патента: WO2019106416A1. Автор: Markus BRINK,Sami Rosenblatt,Firat Solgun,Jay GAMBETTA,Antonio Corcoles-Gonzalez. Владелец: Ibm (China) Investment Company Limited. Дата публикации: 2019-06-06.

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Номер патента: EP4053865B1. Автор: Anton Potocnik. Владелец: Interuniversitair Microelektronica Centrum vzw IMEC. Дата публикации: 2024-04-24.

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Номер патента: US20220034833A1. Автор: Lavoie Christian,Yau Jeng-Bang,Wymore Benjamin,Brink Markus. Владелец: . Дата публикации: 2022-02-03.

Systems and methods for applying flux to a quantum-coherent superconducting circuit

Номер патента: AU2013302954B2. Автор: Quentin P. Herr,Anna Y. Herr,Ofer Naaman. Владелец: Northrop Grumman Systems Corp. Дата публикации: 2016-10-06.

Systems and methods for applying flux to a quantum-coherent superconducting circuit

Номер патента: CA2882109A1. Автор: Quentin P. Herr,Anna Y. Herr,Ofer Naaman. Владелец: Northrop Grumman Systems Corp. Дата публикации: 2014-02-20.

Superconducting circuits based devices and methods

Номер патента: EP3577761B1. Автор: Quentin P. Herr,Anna Y. Herr,David C. Harms. Владелец: Microsoft Technology Licensing LLC. Дата публикации: 2022-03-02.

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Номер патента: US20190034819A1. Автор: Zhang Yan,IAN Hou,TAM Kam Weng. Владелец: UNIVERSITY OF MACAU. Дата публикации: 2019-01-31.

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Номер патента: US20170061317A1. Автор: Gambetta Jay M.,Rothwell Mary B.,Rozen James R.,CHOW JERRY M.. Владелец: . Дата публикации: 2017-03-02.

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Номер патента: US20180137429A1. Автор: Gambetta Jay M.,Rothwell Mary B.,Rozen James R.,CHOW JERRY M.. Владелец: . Дата публикации: 2018-05-17.

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Номер патента: US20220285482A1. Автор: Anton Potocnik. Владелец: Interuniversitair Microelektronica Centrum vzw IMEC. Дата публикации: 2022-09-08.

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Номер патента: US20190237649A1. Автор: Gambetta Jay M.,Rosenblatt Sami,Brink Markus,Corcoles-Gonzalez Antonio,Solgun Firat. Владелец: . Дата публикации: 2019-08-01.

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Номер патента: US20200250564A1. Автор: McDermott,III Robert Francis,Vavilov Maxim George,Li Kangbo. Владелец: . Дата публикации: 2020-08-06.

Superconducting qubit device packages

Номер патента: US20190273197A1. Автор: Ravi Pillarisetty,James S. Clarke,Adel A. Elsherbini,Johanna M. Swan,Shawna Liff,Nicole K. Thomas,Hubert C. George,Jeanette M. Roberts,Roman CAUDILLO,Zachary R. Yoscovits. Владелец: Intel Corp. Дата публикации: 2019-09-05.

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Номер патента: US20150311422A1. Автор: Chang Josephine B.,Rigetti Chad T.,Rothwell Mary E.,Keefe George A.. Владелец: INTERNATIONAL BUSINESS MACHINES CORPORATION. Дата публикации: 2015-10-29.

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Номер патента: US20170317262A1. Автор: Abraham David W.,Gambetta Jay M.,CHOW JERRY M.,Smolin John A.. Владелец: . Дата публикации: 2017-11-02.

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Номер патента: US20150340584A1. Автор: Chang Josephine B.,Rigetti Chad T.,Rothwell Mary E.,Keefe George A.. Владелец: . Дата публикации: 2015-11-26.

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Номер патента: US20180342663A1. Автор: PRZYBYSZ ANTHONY JOSEPH,FERGUSON DAVID GEORGE,STRAND JOEL D.. Владелец: Northrop Grumman Systems Corporation. Дата публикации: 2018-11-29.

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Номер патента: US20160364653A1. Автор: Gambetta Jay M.,Rothwell Mary B.,Rozen James R.,CHOW JERRY M.. Владелец: . Дата публикации: 2016-12-15.

Two-dimensional scalable superconducting qubit structure and cavity mode control method therefor

Номер патента: GB202208472D0. Автор: . Владелец: University of Science and Technology of China USTC. Дата публикации: 2022-07-27.

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Номер патента: US20190044051A1. Автор: Pillarisetty Ravi,MICHALAK DAVID J.,CLARKE JAMES S.,Roberts Jeanette M.,Caudillo Roman,George Hubert C.,Lampert Lester,Thomas Nicole K.. Владелец: Intel Corporation. Дата публикации: 2019-02-07.

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Номер патента: US20170077382A1. Автор: Abraham David W.,Gambetta Jay M.,CHOW JERRY M.,Smolin John A.. Владелец: . Дата публикации: 2017-03-16.

ZZZ COUPLER FOR SUPERCONDUCTING QUBITS

Номер патента: US20200091396A1. Автор: PRZYBYSZ ANTHONY JOSEPH,FERGUSON DAVID GEORGE,STRAND JOEL D.. Владелец: Northrop Grumman Systems Corporation. Дата публикации: 2020-03-19.

LOW LOSS ARCHITECTURE FOR SUPERCONDUCTING QUBIT CIRCUITS

Номер патента: US20190165242A1. Автор: Gambetta Jay M.,Rosenblatt Sami,Brink Markus,Corcoles-Gonzalez Antonio,Solgun Firat. Владелец: . Дата публикации: 2019-05-30.

Suspended superconducting qubits

Номер патента: US20140264286A1. Автор: Josephine B. Chang,Mary E. Rothwell,Chad T. Rigetti,George A. Keefe. Владелец: International Business Machines Corp. Дата публикации: 2014-09-18.

MODULAR ARRAY OF VERTICALLY INTEGRATED SUPERCONDUCTING QUBIT DEVICES FOR SCALABLE QUANTUM COMPUTING

Номер патента: US20170213143A1. Автор: Gambetta Jay M.,Rothwell Mary B.,Rozen James R.,CHOW JERRY M.. Владелец: . Дата публикации: 2017-07-27.

MODULAR ARRAY OF VERTICALLY INTEGRATED SUPERCONDUCTING QUBIT DEVICES FOR SCALABLE QUANTUM COMPUTING

Номер патента: US20180232655A1. Автор: Gambetta Jay M.,Rothwell Mary B.,Rozen James R.,CHOW JERRY M.. Владелец: . Дата публикации: 2018-08-16.

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Номер патента: US20180285760A1. Автор: Abdo Baleegh. Владелец: . Дата публикации: 2018-10-04.

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Номер патента: US20180331274A1. Автор: Abraham David W.,Gambetta Jay M.,CHOW JERRY M.,Smolin John A.. Владелец: . Дата публикации: 2018-11-15.

Zzz coupler for superconducting qubits

Номер патента: CA3054163A1. Автор: David George Ferguson,Anthony Joseph PRZYBYSZ,Joel D. STRAND. Владелец: Northrop Grumman Systems Corp. Дата публикации: 2018-09-13.

Superconducting qubit device packages

Номер патента: US11569428B2. Автор: Ravi Pillarisetty,James S. Clarke,Adel A. Elsherbini,Johanna M. Swan,Shawna Liff,Nicole K. Thomas,Hubert C. George,Jeanette M. Roberts,Roman CAUDILLO,Zachary R. Yoscovits. Владелец: Santa Clara. Дата публикации: 2023-01-31.

ZZZ coupler for superconducting qubits

Номер патента: US10749095B2. Автор: David George Ferguson,Anthony Joseph PRZYBYSZ,Joel D. STRAND. Владелец: Northrop Grumman Systems Corp. Дата публикации: 2020-08-18.

Low loss architecture for superconducting qubit circuits

Номер патента: GB202009577D0. Автор: . Владелец: International Business Machines Corp. Дата публикации: 2020-08-05.

Superconducting qubit device packages

Номер патента: WO2018125026A1. Автор: Ravi Pillarisetty,James S. Clarke,Adel A. Elsherbini,Johanna M. Swan,Shawna Liff,Nicole K. Thomas,Hubert C. George,Jeanette M. Roberts,Roman CAUDILLO,Zachary R. Yoscovits. Владелец: Intel Corporation. Дата публикации: 2018-07-05.

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Номер патента: US20220285482A1. Автор: Anton Potocnik. Владелец: Interuniversitair Microelektronica Centrum vzw IMEC. Дата публикации: 2022-09-08.

Zzz coupler for superconducting qubits

Номер патента: EP3593295B1. Автор: David George Ferguson,Anthony Joseph PRZYBYSZ,Joel D. STRAND. Владелец: Northrop Grumman Systems Corp. Дата публикации: 2024-06-26.

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Номер патента: US20240113127A1. Автор: Sangwook Kim,Yunseong LEE,Jinseong Heo,Sanghyun JO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-04-04.

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Номер патента: US11887989B2. Автор: Sangwook Kim,Yunseong LEE,Jinseong Heo,Sanghyun JO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-01-30.

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Номер патента: US20230040335A1. Автор: Jaechul Park,Youngkwan Cha. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-02-09.

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Номер патента: US20210036024A1. Автор: Kim Sangwook,HEO Jinseong,LEE Yunseong,JO Sanghyun. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2021-02-04.

Quantum nondemolition microwave photon counter based on the cross-kerr nonlinearity of a josephson junction embedded in a superconducting circuit

Номер патента: WO2017055946A1. Автор: Baleegh ABDO. Владелец: Ibm (China) Investment Company Limited. Дата публикации: 2017-04-06.

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Номер патента: US20170089961A1. Автор: Baleegh ABDO. Владелец: International Business Machines Corp. Дата публикации: 2017-03-30.

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Номер патента: GB2559068B. Автор: Abdo Baleegh. Владелец: International Business Machines Corp. Дата публикации: 2019-01-23.

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Номер патента: US20170091647A1. Автор: Abdo Baleegh. Владелец: . Дата публикации: 2017-03-30.

Quantum nondemolition microwave photon counter based on the cross-kerr nonlinearity of a josephson junction embedded in a superconducting circuit

Номер патента: US20180101787A1. Автор: Baleegh ABDO. Владелец: International Business Machines Corp. Дата публикации: 2018-04-12.

Multi-tunable superconducting circuits

Номер патента: US20140235450A1. Автор: Matthias Steffen,Jerry M. Chow,Jay M. Gambetta,Antonio D. Corcoles Gonzalez. Владелец: International Business Machines Corp. Дата публикации: 2014-08-21.

A superconducting qubit and resonator system based on the josephson ring modulator

Номер патента: EP4022767B1. Автор: Baleegh ABDO. Владелец: International Business Machines Corp. Дата публикации: 2023-10-18.

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Номер патента: US20240250021A1. Автор: Hidekazu Egawa,Kenichi Echigoya. Владелец: Micron Technology Inc. Дата публикации: 2024-07-25.

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Номер патента: US20230389258A1. Автор: Tae-hyung Kim,Dae Young Moon,Eo Jin LEE,Ho Young TANG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-11-30.

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Номер патента: US20190312088A1. Автор: Philippe Boivin,Olivier Weber,Emmanuel Petitprez,Emeline Souchier,Jean Jacques FAGOT. Владелец: Commissariat a lEnergie Atomique et aux Energies Alternatives CEA. Дата публикации: 2019-10-10.

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Номер патента: US20220020816A1. Автор: Philippe Boivin,Olivier Weber,Emmanuel Petitprez,Emeline Souchier,Jean Jacques FAGOT. Владелец: STMicroelectronics Crolles 2 SAS. Дата публикации: 2022-01-20.

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Номер патента: US11152430B2. Автор: Philippe Boivin,Olivier Weber,Emmanuel Petitprez,Emeline Souchier,Jean Jacques FAGOT. Владелец: STMicroelectronics Crolles 2 SAS. Дата публикации: 2021-10-19.

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Номер патента: US11818901B2. Автор: Philippe Boivin,Olivier Weber,Emmanuel Petitprez,Emeline Souchier,Jean Jacques FAGOT. Владелец: STMicroelectronics Crolles 2 SAS. Дата публикации: 2023-11-14.

Integrated circuit including a capacitor and method

Номер патента: US20090242952A1. Автор: Steffen Meyer,Frank Heinrichsdorff,Jens Schmidt. Владелец: Qimonda AG. Дата публикации: 2009-10-01.

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Номер патента: US20210234086A1. Автор: Raphaël Lescanne,Zaki Leghtas. Владелец: Individual. Дата публикации: 2021-07-29.

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Номер патента: US20210234086A1. Автор: LESCANNE Raphaël,LEGHTAS Zaki. Владелец: . Дата публикации: 2021-07-29.

Superconducting circuit

Номер патента: FR1266739A. Автор: Donald P Seraphim,Richard A Connell. Владелец: International Business Machines Corp. Дата публикации: 1961-07-17.

Integrated circuits including standard cells and methods of manufacturing the integrated circuits

Номер патента: US20200050728A1. Автор: Jin-Tae Kim,Tae-Joong Song,Seung-Young Lee,Jin-young Lim,Sung-We Cho. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-02-13.

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Номер патента: US20240128269A1. Автор: Abhishek A. Sharma,Ravi Pillarisetty,Marko Radosavljevic,Seung Hoon Sung,Van H. Le. Владелец: Intel Corp. Дата публикации: 2024-04-18.

Integrated circuit including standard cell and method of manufacturing the integrated circuit

Номер патента: US20240303410A1. Автор: Sanghoon Baek,Seungyoung Lee,Seungman Lim,Jisu YU,Hyeongyu You,Jaeho Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-09-12.

Flip flop and design method for integrated circuit including same

Номер патента: US20230361760A1. Автор: Ahreum Kim,Minsu Kim,Eunhee Choi,Youngo Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-11-09.

Integrated circuit including a physically unclonable function device and corresponding method for implementing a physically unclonable function

Номер патента: US20230238060A1. Автор: Francesco La Rosa,Antonino Conte. Владелец: STMICROELECTRONICS SRL. Дата публикации: 2023-07-27.

Integrated circuit including standard cells and method of designing the same

Номер патента: EP4372798A3. Автор: Wootae Kim,Juyeon KIM,Jungho DO,Seungyoung Lee,Jisu YU,Hyeongyu You. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-17.

Standard cell libraries and integrated circuit including standard cells

Номер патента: US20090212327A1. Автор: Ha-young Kim,Sang-Jin Cheong. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2009-08-27.

Integrated circuit including through-silicon via and method of designing the integrated circuit

Номер патента: US20240128164A1. Автор: Taehyung Kim,Youngrok Park,Hoyoung Tang,SangShin Han. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-04-18.

Electronic circuits including hybrid voltage threshold logical entities

Номер патента: US20230035394A1. Автор: Rahul M. Rao. Владелец: International Business Machines Corp. Дата публикации: 2023-02-02.

Voltage regulator circuit including one or more thin-film transistors

Номер патента: US11923371B2. Автор: Abhishek A. Sharma,Ravi Pillarisetty,Marko Radosavljevic,Seung Hoon Sung,Van H. Le. Владелец: Intel Corp. Дата публикации: 2024-03-05.

Integrated circuit including standard cell and method of manufacturing the integrated circuit

Номер патента: US12019965B2. Автор: Sanghoon Baek,Seungyoung Lee,Seungman Lim,Jisu YU,Hyeongyu You,Jaeho Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-06-25.

Integrated Circuit Including Gate Electrode Level Region Including Cross-Coupled Transistors Having Gate Contacts Located Over Inner Portion of Gate Electrode Level Region and Offset Gate Level Feature Line Ends

Номер патента: US20130119476A1. Автор: Becker Scott T.,Mali Jim,Lambert Carole. Владелец: . Дата публикации: 2013-05-16.

INPUT SENSING CIRCUIT INCLUDING A PRESSURE SENSING PART AND A DISPLAY DEVICE INCLUDING THE SAME

Номер патента: US20220057899A1. Автор: KIM Minsoo. Владелец: . Дата публикации: 2022-02-24.

Semiconductor Chip Including Integrated Circuit Including At Least Five Gate Level Conductive Structures Having Particular Spatial and Electrical Relationship and Method for Manufacturing the Same

Номер патента: US20160079381A1. Автор: Michael C. Smayling,Scott T. Becker. Владелец: Tela Innovations Inc. Дата публикации: 2016-03-17.

Method and apparatus for evaluating quantum gate in superconducting circuit, device and storage medium

Номер патента: AU2023201780A1. Автор: Lijing Jin,Runyao Duan. Владелец: Beijing Baidu Netcom Science And Technology Co Ltd. Дата публикации: 2023-04-20.

Method and Apparatus for Evaluating Quantum Gate in Superconducting Circuit, Device and Storage Medium

Номер патента: US20210232964A1. Автор: Lijing Jin,Runyao Duan. Владелец: Beijing Baidu Netcom Science And Technology Co Ltd. Дата публикации: 2021-07-29.

Process for manufacturing a superconductor and a method for producing a superconducting circuit

Номер патента: CA1328242C. Автор: Satoshi Takano,Takahiro Imai,Saburo Tanaka,Hideo Itozaki,Nobuhiko Fujita,Keizo Harada,Tetsuji Jodai,Noriyuki Yoshida,Noriki Hayashi,Kenji Miyazaki,Shuji Yazu,Naoji Fujimori. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 1994-04-05.

Nanowire hotspot controllable and tunable coupling of superconducting qubits

Номер патента: US20240244985A1. Автор: Khalil Harrabi. Владелец: KING FAHD UNIVERSITY OF PETROLEUM AND MINERALS. Дата публикации: 2024-07-18.

Superconductive circuit with film-layered josephson junction and process of fabrication thereof

Номер патента: US5304817A. Автор: Ichiro Ishida. Владелец: NEC Corp. Дата публикации: 1994-04-19.

Superconducting circuit physical layout system and method

Номер патента: WO2016018430A1. Автор: Quentin P. Herr,Anna Y. Herr. Владелец: Northrop Grumman Systems Corporation. Дата публикации: 2016-02-04.

Measurement scheme for superconducting qubits using low-frequency microwave signals within a dilution refrigerator

Номер патента: EP3956824A1. Автор: Baleegh ABDO. Владелец: International Business Machines Corp. Дата публикации: 2022-02-23.

Measurement scheme for superconducting qubits using low-frequency microwave signals within a dilution refrigerator

Номер патента: US20200333263A1. Автор: Baleegh ABDO. Владелец: International Business Machines Corp. Дата публикации: 2020-10-22.

Measurement scheme for superconducting qubits using low-frequency microwave signals within a dilution refrigerator

Номер патента: US11940392B2. Автор: Baleegh ABDO. Владелец: International Business Machines Corp. Дата публикации: 2024-03-26.

Measurement scheme for superconducting qubits using low-frequency microwave signals within a dilution refrigerator

Номер патента: AU2020259653A1. Автор: Baleegh ABDO. Владелец: International Business Machines Corp. Дата публикации: 2021-09-30.

Measurement scheme for superconducting qubits using low-frequency microwave signals within a dilution refrigerator

Номер патента: WO2020212092A1. Автор: Baleegh ABDO. Владелец: Ibm United Kingdom Limited. Дата публикации: 2020-10-22.

Measurement scheme for superconducting qubits using low-frequency microwave signals within a dilution refrigerator

Номер патента: CA3170016A1. Автор: Baleegh ABDO. Владелец: International Business Machines Corp. Дата публикации: 2020-10-22.

Measurement scheme for superconducting qubits using low-frequency microwave signals within a dilution refrigerator

Номер патента: AU2020259653B2. Автор: Baleegh ABDO. Владелец: International Business Machines Corp. Дата публикации: 2023-08-03.

Hard mask and preparation method thereof, preparation method of josephson junction, and superconducting circuit

Номер патента: US12048255B2. Автор: Chunqing Deng,Ran GAO,Jingwei Zhou. Владелец: Alibaba Group Holding Ltd. Дата публикации: 2024-07-23.

SUPERCONDUCTING RESONATOR DEFINITION BASED ON ONE OR MORE ATTRIBUTES OF A SUPERCONDUCTING CIRCUIT

Номер патента: US20210006234A1. Автор: Olivadese Salvatore Bernardo. Владелец: . Дата публикации: 2021-01-07.

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Номер патента: US20200336134A1. Автор: Olivadese Salvatore Bernardo. Владелец: . Дата публикации: 2020-10-22.

Hard mask and preparation method thereof, preparation method of josephson junction, and superconducting circuit

Номер патента: US20230210020A1. Автор: Chunqing Deng,Ran GAO,Jingwei Zhou. Владелец: Alibaba Group Holding Ltd. Дата публикации: 2023-06-29.

Trilayer josephson junction structure with small air bridge and no interlevel dielectric for superconducting qubits

Номер патента: US20170077383A1. Автор: Josephine B. Chang,Gerald W. Gibson,Mark B. Ketchen. Владелец: International Business Machines Corp. Дата публикации: 2017-03-16.

Trilayer Josephson junction structure with small air bridge and no interlevel dielectric for superconducting qubits

Номер патента: US10199554B2. Автор: Josephine B. Chang,Gerald W. Gibson,Mark B. Ketchen. Владелец: International Business Machines Corp. Дата публикации: 2019-02-05.

Systems for probing superconducting circuits including the use of a non-magnetic cryogenic heater

Номер патента: US20210011082A1. Автор: Miriam E. Marizan,Edward M. Kurek. Владелец: Microsoft Technology Licensing LLC. Дата публикации: 2021-01-14.

Systems for probing superconducting circuits comprising a non-magnetic cryogenic heater, non-magnetic cryogenic heater

Номер патента: WO2021006956A1. Автор: Miriam E. Marizan,Edward M. Kurek. Владелец: Microsoft Technology Licensing, LLC. Дата публикации: 2021-01-14.

Systems for probing superconducting circuits including the use of a non-magnetic cryogenic heater

Номер патента: US11137443B2. Автор: Miriam E. Marizan,Edward M. Kurek. Владелец: Microsoft Technology Licensing LLC. Дата публикации: 2021-10-05.

Improvements in and relating to superconductive circuits

Номер патента: GB926443A. Автор: . Владелец: International Business Machines Corp. Дата публикации: 1963-05-15.

Superconducting circuit means

Номер патента: US3761798A. Автор: A Silver,J Zimmerman. Владелец: Ford Motor Co. Дата публикации: 1973-09-25.

Bolometer pixel readout integrated circuit including trigger sense circuit

Номер патента: EP3983766A1. Автор: Jeffrey Mitchell,Ryan Boesch,Matthew C. Thomas. Владелец: Raytheon Co. Дата публикации: 2022-04-20.

Bolometer pixel readout integrated circuit including trigger sense circuit

Номер патента: WO2020252102A1. Автор: Jeffrey Mitchell,Ryan Boesch,Matthew C. Thomas. Владелец: Raytheon Company. Дата публикации: 2020-12-17.

Oscillator circuit including oscillator

Номер патента: US20200309525A1. Автор: Ronald Joseph Lipka. Владелец: Panasonic Intellectual Property Management Co Ltd. Дата публикации: 2020-10-01.

Integrated circuit including dedicated and programmable logic

Номер патента: EP1219031A1. Автор: David D. Eaton,Ket-Chong Yap,Kevin K. Yee,E. Thomas Hart,Andrew K. Chan,Neal A. Palmer,Michael W Dini,James Apland,Panawalge S. N. Gunaratna. Владелец: QuickLogic Corp. Дата публикации: 2002-07-03.

Power management integrated circuit including detection circuit with capacitive element

Номер патента: US20210382508A1. Автор: Hyunseok Nam,Sangyoung Lee,Jeongwoon KONG,Junhyun Bae. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-12-09.

Current detection circuit including non-linear circuit and power supply circuit containing the same

Номер патента: US12051964B2. Автор: Ryuji Yamada,Ryuunosuke Araumi. Владелец: Fuji Electric Co Ltd. Дата публикации: 2024-07-30.

Memory interface circuit including output impedance monitor and method of calibrating output impedance thereof

Номер патента: US20210184677A1. Автор: Min-hyung Cho,Seong Min Kim,Young-Deuk Jeon. Владелец: Electronics and Telecommunications Research Institute ETRI. Дата публикации: 2021-06-17.

Built-in self-test circuit and temperature measurement circuit including the same

Номер патента: US20230280398A1. Автор: Kwangho Kim,Sangho Kim,Yongjin Lee,Michael Choi,Junhee Shin,Jooseong Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-09-07.

Built-in self-test circuit and temperature measurement circuit including the same

Номер патента: US11686766B2. Автор: Kwangho Kim,Sangho Kim,Yongjin Lee,Michael Choi,Junhee Shin,Jooseong Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-06-27.

Integrated circuit including memory element with spatially stable material

Номер патента: US20090050870A1. Автор: Thomas Happ,Bernhard Ruf,Petra Majewski,Dieter Andres. Владелец: Qimonda AG. Дата публикации: 2009-02-26.

Latch circuit, flip-flop circuit including the same

Номер патента: US20220345118A1. Автор: Dal Hee LEE,Byoung Gon KANG,Woo Kyu KIM,Tae Jun YOO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-10-27.

Latch circuit, flip-flop circuit including the same

Номер патента: US20210328582A1. Автор: Dal Hee LEE,Byoung Gon KANG,Woo Kyu KIM,Tae Jun YOO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-10-21.

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Номер патента: US11885673B2. Автор: Christian Bouvier,Daniel Matolin,Denis BOURKE. Владелец: Prophesee SA. Дата публикации: 2024-01-30.

Integrated circuit including cell array with write assist cell

Номер патента: US11636894B2. Автор: Taemin CHOI,Seongook JUNG,Keonhee Cho,Heekyung Choi. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-04-25.

Switching circuit, DC-DC converter and display driver integrated circuit including the same

Номер патента: US20100091002A1. Автор: Hyo Jin Kim,Jong-Hyun Kim,Si Woo Kim,Jae Sung Kang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2010-04-15.

Integrated circuit including cell array with write assist cell

Номер патента: US20220148644A1. Автор: Taemin CHOI,Seongook JUNG,Keonhee Cho,Heekyung Choi. Владелец: Industry Academic Cooperation Foundation of Yonsei University. Дата публикации: 2022-05-12.

Embedded logic analyzer and integrated circuit including the same

Номер патента: US20170045582A1. Автор: Joon-Won Ko. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-02-16.

Embedded logic analyzer and integrated circuit including the same

Номер патента: US11719747B2. Автор: Joon-Won Ko. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-08-08.

Bandgap reference circuit including resistivity temperature coefficient cancellation circuit, and oscillator circuit including the bandgap reference circuit

Номер патента: US11789482B2. Автор: Taeik Kim,Chanyoung Jeong,Wooseok Kim,Jusung LEE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-10-17.

Power circuit including inrush current limiter, and integrated circuit including the power circuit

Номер патента: US6150800A. Автор: Shiro Sakiyama,Masayoshi Kinoshita,Hiroo Yamamoto,Katsuji Satomi,Jun Kajiwara,Katsuhiro Ootani. Владелец: Matsushita Electric Industrial Co Ltd. Дата публикации: 2000-11-21.

Bandgap reference based power-on detect circuit including a supression circuit

Номер патента: US5852376A. Автор: William F. Kraus. Владелец: Ramtron International Corp. Дата публикации: 1998-12-22.

Bandgap reference based power-on detect circuit including a suppression circuit

Номер патента: US5867047A. Автор: William F. Kraus. Владелец: Ramtron International Corp. Дата публикации: 1999-02-02.

Sequential circuit, scan chain circuit including the same and integrated circuit including the same

Номер патента: US10422832B2. Автор: Taiki Uemura. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-09-24.

Ripple circuit including hall effect sensor

Номер патента: US20220416705A1. Автор: Francois Breynaert,Guillaume Landicheff. Владелец: Inteva Products LLC. Дата публикации: 2022-12-29.

Transmitter circuit including selection circuit, and method of operating the selection circuit

Номер патента: US11804838B2. Автор: Hyunyoon Cho,Youngdon CHOI,Junghwan Choi,Joohwan Kim,Junyoung Park,Eunseok SHIN,Jindo BYUN. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-10-31.

Transient voltage suppression protection circuit including built in testing

Номер патента: US20140306714A1. Автор: Gary L. Hess,James Quigley, Jr.. Владелец: Hamilton Sundstrand Corp. Дата публикации: 2014-10-16.

Flip-flops and scan chain circuits including the same

Номер патента: US20240061039A1. Автор: Minji Kim,Byounggon Kang,Dalhee Lee,Giyoung Yang,Taejung Seol,Jaebeom Yang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-02-22.

Built-in self-test circuits and semiconductor integrated circuits including the same

Номер патента: US11867757B2. Автор: Jinwoo Park,Michael Choi,Sungno Lee,Younghyo PARK,Eunhye OH,Heejune Lee,Youngjae CHO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-01-09.

Emi shielding circuit and semiconductor integrated circuit including the same

Номер патента: US20130127509A1. Автор: Jun Ho Lee. Владелец: Hynix Semiconductor Inc. Дата публикации: 2013-05-23.

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Номер патента: US8570062B2. Автор: Jun Ho Lee. Владелец: SK hynix Inc. Дата публикации: 2013-10-29.

Built-in self-test circuits and semiconductor integrated circuits including the same

Номер патента: US20220187366A1. Автор: Jinwoo Park,Michael Choi,Sungno Lee,Younghyo PARK,Eunhye OH,Heejune Lee,Youngjae CHO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-06-16.

Integrated circuit including programmable circuit

Номер патента: CA2010122A1. Автор: Makoto Sakamoto. Владелец: Kawasaki Steel Corp. Дата публикации: 1990-12-21.

Slew rate adjusting circuit for adjusting slew rate, buffer circuit including same, and slew rate adjusting method

Номер патента: US11936372B2. Автор: Jung Hoon SUL,Dong Il Seo. Владелец: MagnaChip Semiconductor Ltd. Дата публикации: 2024-03-19.

Transmission gate circuit, inverter circuit and gate driving circuit including the same

Номер патента: US20240054959A1. Автор: Kyungho Kim,Gichang Lee,Keechan PARK,Donghee Shin,Sunkwun SON,Yikyoung You,Sangyong NO,Nokyung Park. Владелец: University Industry Cooperation Corporation of Konkuk University. Дата публикации: 2024-02-15.

Regulating circuit including a plurality of low drop out regulators and method of operating the same

Номер патента: US20200310477A1. Автор: NOMIYAMA TAKAHIRO,Ikhwan Kim,Jiseon PAEK,Jaeyeol Han. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-10-01.

Regulating circuit including a plurality of low drop out regulators and method of operating the same

Номер патента: US11860658B2. Автор: TAKAHIRO Nomiyama,Ikhwan Kim,Jiseon PAEK,Jaeyeol Han. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-01-02.

Scan chain circuit and integrated circuit including the same

Номер патента: US20160003901A1. Автор: Chan-Ho Lee,In-Gyu Park,Dong-Wook Seo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-01-07.

Voltage generation circuit and semiconductor circuit including the voltage generation circuit

Номер патента: US11264097B2. Автор: Chan Hui Jeong. Владелец: SK hynix Inc. Дата публикации: 2022-03-01.

Semiconductor circuit including a dc-dc converter and a voltage regulator

Номер патента: US20200083810A1. Автор: Ki Jae SONG,Jong Woon YOO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-03-12.

Flip-flop circuit including latch circuits

Номер патента: US7397286B2. Автор: Hideaki Miyamoto. Владелец: Sanyo Electric Co Ltd. Дата публикации: 2008-07-08.

Electronic circuit including charge pump for converting voltage

Номер патента: US20200144910A1. Автор: Bilal Ahmad Janjua,Sungwhan SEO,Vivek Venkata Kalluru. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-05-07.

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Номер патента: US20180203479A1. Автор: Sung Gon Kim,Ju Hyun Lee,Chun Sik Jung,Kyu Ho Kim. Владелец: Silicon Works Co Ltd. Дата публикации: 2018-07-19.

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Номер патента: US11996846B2. Автор: Dal Hee LEE,Byoung Gon KANG,Woo Kyu KIM,Tae Jun YOO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-05-28.

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Номер патента: US20220286095A1. Автор: Jiyeon Park,Kihwan SEONG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-09-08.

Comparator circuit including feedback circuit

Номер патента: US20230370084A1. Автор: Hyochang Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-11-16.

Comparator circuit including feedback circuit

Номер патента: US11955986B2. Автор: Hyochang Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-04-09.

Stress engineered microspring for cryogenic superconducting circuits

Номер патента: US20240274325A1. Автор: Qian Wang,Yu Wang,Christopher L. Chua,Eugene M. Chow. Владелец: Xerox Corp. Дата публикации: 2024-08-15.

Superconducting circuit

Номер патента: FR1414986A. Автор: . Владелец: National Cash Register Co. Дата публикации: 1965-10-22.

Method for realizing steep side wall of laminated etching in aluminum-based superconducting circuit

Номер патента: CN115207203A. Автор: 崔志远,郭丰,冯加贵,熊康林. Владелец: Gusu Laboratory of Materials. Дата публикации: 2022-10-18.

Photonic quantum networking for large superconducting qubit modules

Номер патента: WO2022081675A1. Автор: Marko Loncar,Matthew J. Reagor,Jeffrey Cole HOLZGRAFE. Владелец: Rigetti & Co, Llc. Дата публикации: 2022-04-21.

Method of forming superconducting circuit

Номер патента: US5242898A. Автор: Satoshi Takano,Kenichi Takahashi,Noriyuki Yoshida,Akira Mizoguchi,Noriki Hayashi,Kenji Miyazaki,Yoichi Yamaguchi,Jun Shioya. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 1993-09-07.

Systems and methods for addressing devices in a superconducting circuit

Номер патента: US11839164B2. Автор: Loren J. Swenson,George E. G. Sterling,Christopher B. Rich. Владелец: D Wave Systems Inc. Дата публикации: 2023-12-05.

Universal adiabatic quantum computing with superconducting qubits

Номер патента: US10037493B2. Автор: Mohammad H. S. Amin,Richard G. Harris,Anatoly Smirnov. Владелец: D Wave Systems Inc. Дата публикации: 2018-07-31.

Drive enhanced j/zz operation for superconducting qubits

Номер патента: US20220383169A1. Автор: Isaac Lauer,David C. Mckay,Easwar Magesan,Abhinav Kandala. Владелец: International Business Machines Corp. Дата публикации: 2022-12-01.

Drive enhanced j/zz operation for superconducting qubits

Номер патента: WO2022243338A1. Автор: Isaac Lauer,David McKay,Easwar Magesan,Abhinav Kandala. Владелец: IBM Deutschland GmbH. Дата публикации: 2022-11-24.

Method and system for determining critical timing paths in a superconducting circuit design

Номер патента: EP3984132B1. Автор: Kenneth Reneris,Janet L. Schneider,Mark G. Kupferschmidt,Paul Accisano. Владелец: Microsoft Technology Licensing LLC. Дата публикации: 2024-08-21.

Drive enhanced j/zz operation for superconducting qubits

Номер патента: EP4341868A1. Автор: Isaac Lauer,David McKay,Easwar Magesan,Abhinav Kandala. Владелец: International Business Machines Corp. Дата публикации: 2024-03-27.

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Номер патента: JP2020532099A. Автор: ガンベッタ、ジェイ,アブラハム、デイヴィッド,チャン、ジョセフィーヌ. Владелец: International Business Machines Corp. Дата публикации: 2020-11-05.

SUPERCONDUCTING CIRCUITS BASED DEVICES AND METHODS

Номер патента: US20180226974A1. Автор: Herr Quentin P.,Herr Anna Y.,Harms David C.. Владелец: . Дата публикации: 2018-08-09.

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Номер патента: FR76777E. Автор: . Владелец: International Business Machines Corp. Дата публикации: 1961-12-01.

Superconducting circuits for an A-and-not-B gate having an exclusive-OR gate and an AND gate

Номер патента: US10320394B1. Автор: Jack R. Powell,Alexander L. Braun. Владелец: Microsoft Technology Licensing LLC. Дата публикации: 2019-06-11.

Superconducting circuits and method for an a-and-not-b gate having an exclusive-or gate and an and gate

Номер патента: EP3853997B1. Автор: Jack R. Powell,Alexander L. Braun. Владелец: Northrop Grumman Systems Corp. Дата публикации: 2024-04-10.

Determining critical timing paths in a superconducting circuit design

Номер патента: US20220180038A1. Автор: Kenneth Reneris,Janet L. Schneider,Mark G. Kupferschmidt,Paul Accisano. Владелец: Microsoft Technology Licensing LLC. Дата публикации: 2022-06-09.

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Номер патента: US20200334104A1. Автор: Jiang Liang,FRUNZIO Luigi,DEVORET Michel,Girvin Steven M.,Rosenblum Serge,Reinhold Philip,Schoelkopf III Robert J.. Владелец: YALE UNIVERSITY. Дата публикации: 2020-10-22.

Hardware efficient fault tolerant operation using superconducting circuits

Номер патента: CN111542842A. Автор: 蒋良,瑟奇·罗森布拉姆,菲利普·赖因霍尔德,史蒂文·M·格文,路易吉·弗伦齐奥,米歇尔·德沃尔特,罗伯特·J·舍尔科普夫三世. Владелец: YALE UNIVERSITY. Дата публикации: 2020-08-14.

Superconducting circuit for forbidden gate with exclusive-OR gate and AND gate

Номер патента: CN112740555A. Автор: A·L·布朗,J·R·鲍威尔. Владелец: Microsoft Technology Licensing LLC. Дата публикации: 2021-04-30.

Determining critical timing paths in a superconducting circuit design

Номер патента: WO2021015866A1. Автор: Kenneth Reneris,Janet L. Schneider,Mark G. Kupferschmidt,Paul Accisano. Владелец: Microsoft Technology Licensing, LLC. Дата публикации: 2021-01-28.

Method for fabricating enhancement mode transistor material, enhancement mode transistor material fabricated thereby, enhancement mode transistor including the same, and amplifying circuit including the same

Номер патента: US20240068120A1. Автор: Tae Il Kim,Young Jin Jo,Seung Hwan CHOY. Владелец: Sungkyunkwan University Research and Business Foundation. Дата публикации: 2024-02-29.

UNIVERSAL ADIABATIC QUANTUM COMPUTING WITH SUPERCONDUCTING QUBITS

Номер патента: US20180314970A1. Автор: Harris Richard G.,Amin Mohammad H.,Smirnov Anatoly. Владелец: . Дата публикации: 2018-11-01.

System and method for quantum information transfer between optical photons and superconductive qubits

Номер патента: CA2849589A1. Автор: Hanhee Paik. Владелец: Raytheon BBN Technologies Corp. Дата публикации: 2014-10-23.

Monolithic silicon josephson junctions for superconducting qubits

Номер патента: US20230180632A1. Автор: Thorsten Muehge,Nicholas Torleiv Bronn,Mark Mattingley-Scott. Владелец: International Business Machines Corp. Дата публикации: 2023-06-08.

Integrated circuit including memory having reduced cross talk

Номер патента: EP2278621A3. Автор: Thomas Happ,Jan Boris Philipp. Владелец: Qimonda AG. Дата публикации: 2013-07-31.

Method and apparatus for coupling superconducting qubit, electronic device, computer medium

Номер патента: AU2023258398A1. Автор: WANG YUXUAN,JIN Lijing. Владелец: Beijing Baidu Netcom Science And Technology Co Ltd. Дата публикации: 2024-08-15.

Superconducting circuit and a process for fabricating the same

Номер патента: CA2054597C. Автор: Hiroshi Inada,Takao Nakamura,Michitomo Iiyama. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 1997-08-19.

Quantum control by modulating tunable devices in a superconducting circuit

Номер патента: WO2021102321A2. Автор: Nicolas Didier. Владелец: RIGETTI & CO., INC.. Дата публикации: 2021-05-27.

Method and device for calibrating frequency of superconducting qubit, and readable storage medium

Номер патента: EP4257990A1. Автор: Hanqing SHI,Weicheng KONG. Владелец: Origin Quantum Computing Technology Hefei Co Ltd. Дата публикации: 2023-10-11.

Fluorine Containing Low Loss Dielectric Layers for Superconducting Circuits

Номер патента: US20160133819A1. Автор: Ashish Bodke,Frank Greer. Владелец: Intermolecular Inc. Дата публикации: 2016-05-12.

Method and apparatus for coupling superconducting qubit, electronic device, computer medium

Номер патента: NL2036175A. Автор: WANG YUXUAN,JIN Lijing. Владелец: Beijing Baidu Netcom Sci & Tech Co Ltd. Дата публикации: 2024-01-12.

Method and apparatus for coupling superconducting qubit, electronic device, computer medium

Номер патента: US20240061986A1. Автор: Yuxuan WANG,Lijing Jin. Владелец: Beijing Baidu Netcom Science And Technology Co Ltd. Дата публикации: 2024-02-22.

Electromagnetically insulated superconducting qubit device

Номер патента: US20230130939A1. Автор: Sébastien JEZOUIN. Владелец: Alice & Bob. Дата публикации: 2023-04-27.

Method and device for calibrating frequency of superconducting qubit, and readable storage medium

Номер патента: US20240069079A1. Автор: Hanqing SHI,Weicheng KONG. Владелец: Origin Quantum Computing Technology Hefei Co Ltd. Дата публикации: 2024-02-29.

Integrated circuit including integrated standard cell structure

Номер патента: US20210134837A1. Автор: Ji Su YU,Jin Young Lim,Hyeon Gyu YOU,Gi Young Yang,In Gyum KIM,Hak Chul JUNG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-05-06.

Integrated circuit including back-side wiring and a method of designing the same

Номер патента: US20240243038A1. Автор: Jaehyun LIM,Taehyung Kim,Hoyoung Tang,Eojin LEE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-18.

Integrated circuit including integrated standard cell structure

Номер патента: US20240243134A1. Автор: Ji Su YU,Jin Young Lim,Hyeon Gyu YOU,Gi Young Yang,In Gyum KIM,Hak Chul JUNG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-18.

Integrated circuit including backside wiring

Номер патента: EP4404263A2. Автор: Minjae Jeong,Jungho DO,Seungyoung Lee,Jisu YU,Hyeongyu You. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-24.

Integrated circuit including gate-all-around transistor

Номер патента: US12046653B2. Автор: Taehyung Kim,SangShin Han,Bonyeop KIM,Sangyeop BAECK. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-23.

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Номер патента: US20240250028A1. Автор: Minjae Jeong,Jungho DO,Seungyoung Lee,Jisu YU,Hyeongyu You. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-25.

Integrated circuit including backside wiring and method of designing the integrated circuit

Номер патента: EP4432357A1. Автор: Dalhee Lee,Sangjung Jeon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-09-18.

Integrated circuit including guard-ring and method of designing the same

Номер патента: US20240153889A1. Автор: Seungkwon Lee,Hankyung Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-05-09.

Integrated circuit including backside wiring pattern

Номер патента: US20240266290A1. Автор: Byounggon Kang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-08-08.

Iintegrated circuit including backside wiring and method of manufacturing the integrated circuit

Номер патента: US20240290692A1. Автор: Minjae Jeong,Jungho DO,Jisu YU. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-08-29.

Integrated circuit including a passive component in an interconnection part, and corresponding manufacturing method

Номер патента: US20240178053A1. Автор: Houssein EL DIRANI,Marouane Mastari,Mohamed Ali Nsibi. Владелец: STMicroelectronics France SAS. Дата публикации: 2024-05-30.

Integrated circuits with diffusion barrier layers and processes for preparing integrated circuits including diffusion barrier layers

Номер патента: US20160056253A1. Автор: Hoon Kim,Rohit Galatage. Владелец: Globalfoundries Inc. Дата публикации: 2016-02-25.

Logic circuits including circuits of different heights and related method of fabrication

Номер патента: US20240321861A1. Автор: Haining Yang,Hyunwoo Park,Junjing Bao,Ming-Huei Lin. Владелец: Qualcomm Inc. Дата публикации: 2024-09-26.

Apparatus and circuits including transistors with different threshold voltages and methods of fabricating the same

Номер патента: US20200135722A1. Автор: Chan-Hong Chern. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-04-30.

Integrated circuit including a capacitive structure of the metal-insulator-metal type and corresponding manufacturing method

Номер патента: US12021074B2. Автор: Pascal Fornara,Roberto Simola. Владелец: STMICROELECTRONICS ROUSSET SAS. Дата публикации: 2024-06-25.

Integrated circuit including transistors and a method of manufacturing the same

Номер патента: US20220393032A1. Автор: Sangwook Kim,Yunseong LEE,Jinseong Heo,Sanghyun JO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-12-08.

Apparatus and circuits including transistors with different polarizations and methods of fabricating the same

Номер патента: US20220130989A1. Автор: Chan-Hong Chern. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-04-28.

Apparatus and circuits including transistors with different polarizations and methods of fabricating the same

Номер патента: US20200161463A1. Автор: Chan-Hong Chern. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-05-21.

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Номер патента: US20240274714A1. Автор: Sangwook Kim,Yunseong LEE,Jinseong Heo,Sanghyun JO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-08-15.

Apparatus and circuits including transistors with different threshold voltages and methods of fabricating the same

Номер патента: US20240274599A1. Автор: Chan-Hong Chern. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-15.

Integrated circuit including a capacitive structure of the metal-insulator-metal type and corresponding manufacturing method

Номер патента: US20240312977A1. Автор: Pascal Fornara,Roberto Simola. Владелец: STMICROELECTRONICS ROUSSET SAS. Дата публикации: 2024-09-19.

Integrated circuit including backside wiring and method of designing the integrated circuit

Номер патента: US20240266344A1. Автор: WooKyu Kim,Seungmin Lee,Jungho DO,Changbeom Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-08-08.

Integrated circuit including high-speed device

Номер патента: US20220399266A1. Автор: Jaehyun Park,Nakwon Lee,Kyeongjoon Ko,Junhan BAE,Gyeongseok SONG,Jongjae Ryu. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-12-15.

Integrated circuit including backside wiring and method of designing the integrated circuit

Номер патента: EP4415034A1. Автор: WooKyu Kim,Seungmin Lee,Jungho DO,Changbeom Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-08-14.

Method for producing an integrated circuit including a fuse element, a fuse-memory element or a resistor element

Номер патента: US20080029477A1. Автор: Georg Seidemann,Reinhard Goellner. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2008-02-07.

Integrated circuits including a FinFET and a nanostructure FET

Номер патента: US10439039B2. Автор: Kern Rim,Stanley Seungchul SONG,Jeffrey Junhao XU,Choh fei Yeap. Владелец: Qualcomm Inc. Дата публикации: 2019-10-08.

Three dimensional circuit including shielded inductor and method of forming same

Номер патента: US20150249051A1. Автор: Sa-Lly Liu,Ming Hsien Tsai,Tzu-Jin Yeh,Fu-Lung Hsueh,Chewn-Pu Jou,Hsieh-Hung HSIEH. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2015-09-03.

Ldmos transistor structures and integrated circuits including ldmos transistor structures

Номер патента: US20180053842A1. Автор: Ming Zhu,Pinghui Li,Yiang Aun Nga,Shi Ya Phyllis Lim. Владелец: GLOBALFOUNDRIES SINGAPORE PTE LTD. Дата публикации: 2018-02-22.

Integrated circuit including a body transistor and method

Номер патента: US20090261411A1. Автор: Dongping Wu. Владелец: Qimonda AG. Дата публикации: 2009-10-22.

Integrated circuit including gate-all-around transistor

Номер патента: US20220140099A1. Автор: Taehyung Kim,SangShin Han,Bonyeop KIM,Sangyeop BAECK. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-05-05.

Method for Manufacturing an Integrated Circuit Including a Lateral Trench Transistor and a Logic Circuit Element

Номер патента: US20170301791A1. Автор: Till Schloesser,Andreas Meiser,Detlef Weber,Karl-Heinz Gebhardt. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2017-10-19.

Integrated circuit including standard cell with a metal layer having a pattern and method of manufacturing the same

Номер патента: US20240128159A1. Автор: Minjae Jeong,Jungho DO,Seungyoung Lee,Jaehee Cho,Jisu YU,Geonwoo Nam,Hyeongyu You. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-04-18.

Integrated circuit including standard cells and method of designing the same

Номер патента: US20240128257A1. Автор: Taejun Yoo,WooKyu Kim,Byounggon Kang,Dalhee Lee,Changbeom Kim,Minjung PARK. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-04-18.

Integrated circuit including standard cell and filler cell

Номер патента: US11948932B2. Автор: Jaewoo SEO,Giyoung Yang,Ingyum Kim,Hakchul JUNG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-04-02.

Integrated circuit including integrated standard cell structure

Номер патента: US11973081B2. Автор: Ji Su YU,Jin Young Lim,Hyeon Gyu YOU,Gi Young Yang,In Gyum KIM,Hak Chul JUNG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-04-30.

Integrated Circuit Including a Power Transistor and an Auxiliary Transistor

Номер патента: US20130140616A1. Автор: Anton Mauder,Hans-Joachim Schulze,Frank Pfirsch. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2013-06-06.

Integrated circuit including transistors having a common base

Номер патента: US11882707B2. Автор: Philippe Boivin. Владелец: Stmicroelectro Rousset Sas. Дата публикации: 2024-01-23.

Integrated circuit including standard cell and filler cell

Номер патента: US20240203973A1. Автор: Jaewoo SEO,Giyoung Yang,Ingyum Kim,Hakchul JUNG. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2024-06-20.

Integrated circuit including supervia and method of making

Номер патента: US20240021516A1. Автор: Wei-Cheng Lin,Jiann-Tyng Tzeng,Kam-Tou SIO. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-01-18.

Integrated circuit including transistors having a common base

Номер патента: US20190312087A1. Автор: Philippe Boivin. Владелец: STMICROELECTRONICS ROUSSET SAS. Дата публикации: 2019-10-10.

Integrated circuit including transistors having a common base

Номер патента: US20220115441A1. Автор: Philippe Boivin. Владелец: STMICROELECTRONICS ROUSSET SAS. Дата публикации: 2022-04-14.

Integrated circuit including transistors having a common base

Номер патента: US11211428B2. Автор: Philippe Boivin. Владелец: STMICROELECTRONICS ROUSSET SAS. Дата публикации: 2021-12-28.

Inverter circuit including short circuit protected composite switch

Номер патента: EP2765605A1. Автор: Michael A. Briere. Владелец: International Rectifier Corp USA. Дата публикации: 2014-08-13.

Integrated circuits including integrated standard cell structure

Номер патента: US11810920B2. Автор: Seung Young Lee,Jae-Ho Park,Sanghoon Baek,Ji Su YU,Hyeon Gyu YOU,Seung Man LIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-11-07.

Integrated circuits including coil circuit and SCR

Номер патента: US11901353B2. Автор: Ming-Dou Ker,Chun-Yu Lin,Wei-Min Wu,Li-Wei Chu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-02-13.

Tunable circuit including integrated filter circuit coupled to variable capacitance, and related integrated circuit (IC) packages and fabrication methods

Номер патента: US11770115B2. Автор: Wei Cheng,Changhan Hobie Yun,Paragkumar Ajaybhai Thadesar,Daniel Daeik Kim,Nosun Park,Hannu Laurila,Ville Lehtisalo,Ville Herman Brunou. Владелец: Qualcomm Inc. Дата публикации: 2023-09-26.

Integrated circuit including backside wiring and method of designing the same

Номер патента: US20240120258A1. Автор: Taehyung Kim,Hoyoung Tang,Yunsick Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-04-11.

Integrated circuit including ferroelectric memory cells and methods for manufacturing

Номер патента: US20180233573A1. Автор: James Lin,Francesco Anthony Annetta. Владелец: Individual. Дата публикации: 2018-08-16.

Integrated circuit including backside wiring and method of designing the same

Номер патента: EP4350762A1. Автор: Taehyung Kim,Hoyoung Tang,Yunsick Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-04-10.

Tunable circuit including integrated filter circuit coupled to variable capacitance, and related integrated circuit (ic) packages and fabrication methods

Номер патента: EP4229754A1. Автор: Wei Cheng,Changhan Hobie Yun,Paragkumar Ajaybhai Thadesar,Daniel Daeik Kim,Nosun Park,Hannu Laurila,Ville Lehtisalo,Ville Herman Brunou. Владелец: Qualcomm Inc. Дата публикации: 2023-08-23.

Tunable circuit including integrated filter circuit coupled to variable capacitance, and related integrated circuit (ic) packages and fabrication methods

Номер патента: WO2022081313A1. Автор: Wei Cheng,Changhan Hobie Yun,Paragkumar Ajaybhai Thadesar,Daniel Daeik Kim,Nosun Park,Hannu Laurila,Ville Lehtisalo,Ville Herman Brunou. Владелец: QUALCOMM INCORPORATED. Дата публикации: 2022-04-21.

Methods of making integrated circuits including air gaps around interconnect structures

Номер патента: US9147602B2. Автор: Chih-hao Chen,Chii-Ping Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2015-09-29.

Microelectronic integrated circuit including triangular semiconductor "and" gate device

Номер патента: US5631581A. Автор: Michael D. Rostoker,Ashok K. Kapoor,Stanislav V. Aleshin,Ranko Scepanovic,Alexander E. Andreev,Alexander S. Podkolzin,James S. Koford,Edwin R. Jones,Gobi R. Padmanahben,Valeriy B. Kudryavtsev. Владелец: LSI Logic Corp. Дата публикации: 1997-05-20.

Microelectronic integrated circuit including hexagonal semiconductor "and"g

Номер патента: US5656850A. Автор: Ashok Kapoor. Владелец: LSI Logic Corp. Дата публикации: 1997-08-12.

Surface mounted circuits including hybrid circuits, having cvd interconnects, and method of preparing the circuits

Номер патента: CA1242810A. Автор: Jaime Reyes,David Allred. Владелец: Energy Conversion Devices Inc. Дата публикации: 1988-10-04.

Method of fabricating an electronic circuit including an aperture through the substrate thereof

Номер патента: US4520561A. Автор: Richard Brown. Владелец: RCA Corp. Дата публикации: 1985-06-04.

Integrated circuit including field effect transistors having a contact on active gate compatible with a small cell area having a small contacted poly pitch

Номер патента: US20190148298A1. Автор: RWIK Sengupta,Mark Rodder,Titash Rakshit,Joon Goo Hong. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-05-16.

Circuit including a negative differential resistance (ndr) device having a graphene channel, and method of operating the cirucit

Номер патента: US20130234762A1. Автор: Shu-Jen Han,Yanqing Wu,Yu-Ming Lin. Владелец: International Business Machines Corp. Дата публикации: 2013-09-12.

Electrostatic discharge device and electrostatic discharge protection circuit including the same

Номер патента: US20210384188A1. Автор: Sukjin Kim,Mijin LEE,Chanhee Jeon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-12-09.

Integrated circuit including interconnection and method of fabricating the same, the interconnection including a pattern shaped and/or a via disposed for mitigating electromigration

Номер патента: US20200235126A1. Автор: Chang-Beom Kim,Tae-Joong Song,Ha-young Kim,Hyun-Jeong Roh,Dal-Hee LEE,Sung-We Cho. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-07-23.

Apparatus and circuits including transistors with different threshold voltages and methods of fabricating the same

Номер патента: US11973078B2. Автор: Chan-Hong Chern. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-04-30.

Creating an aligned via and metal line in an integrated circuit including forming an oversized via mask

Номер патента: US20200118868A1. Автор: Runzi Chang,Min She. Владелец: MARVELL WORLD TRADE LTD. Дата публикации: 2020-04-16.

Creating an aligned via and metal line in an integrated circuit including forming an oversized via mask

Номер патента: US11081387B2. Автор: Runzi Chang,Min She. Владелец: Marvell Asia Pte Ltd. Дата публикации: 2021-08-03.

Integrated circuits including metal-insulator-metal capacitors and methods of forming the same

Номер патента: US20120280358A1. Автор: Ming-Fa Chen,Yuan-Hung Liu,Sung-Hui Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2012-11-08.

Integrated circuit including transistors and a method of manufacturing the same

Номер патента: US11973142B2. Автор: Sangwook Kim,Yunseong LEE,Jinseong Heo,Sanghyun JO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-04-30.

Integrated circuit including a bipolar transistor and methods of making the same

Номер патента: US20120235280A1. Автор: Yeur-Luen Tu,Shih-Chang Liu,Chun-Tsung Kuo,Wei-Tung Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2012-09-20.

Optical integrated circuit including junction laser with oblique mirror

Номер патента: US4136928A. Автор: Ralph A. Logan,James L. Merz. Владелец: Bell Telephone Laboratories Inc. Дата публикации: 1979-01-30.

Integrated circuit including test portion and method for making

Номер патента: US4413271A. Автор: James F. Mayrand,Walter S. Gontowski, Jr.. Владелец: Sprague Electric Co. Дата публикации: 1983-11-01.

Image sensor and electronic circuit included therein

Номер патента: US11418736B2. Автор: Kyung-Min Kim,Moo Young Kim,Kyoungmin Koh,Woong Joo,Mira Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-08-16.

Integrated circuit including a resistive element

Номер патента: GB2016208A. Автор: . Владелец: Western Electric Co Inc. Дата публикации: 1979-09-19.

Integrated circuit including a first channel and a second channel

Номер патента: US20090250763A1. Автор: Franz Kuttner,Gerhard Knoblinger. Владелец: Individual. Дата публикации: 2009-10-08.

Circuit including an MOS transistor whose gate is protected from oxide rupture

Номер патента: US4385337A. Автор: Ichiro Kobayashi,Hiroshi Iwahashi,Masamichi Asano. Владелец: Tokyo Shibaura Electric Co Ltd. Дата публикации: 1983-05-24.

Integrated circuit including dipole incorporation for threshold voltage tuning in transistors

Номер патента: US11894367B2. Автор: Chih-Hao Wang,Chung-Wei Hsu,Mao-Lin Huang,Lung-Kun Chu,Jia-Ni YU,Kuo-Cheng Chiang,Kuan-Lun Cheng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-02-06.

Integrated circuit including interconnection for mitigating electromigration and method of fabricating the same

Номер патента: US20180294280A1. Автор: Chang-Beom Kim,Tae-Joong Song,Ha-young Kim,Hyun-Jeong Roh,Dal-Hee LEE,Sung-We Cho. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-10-11.

Integrated circuits including replacement gate structures and methods for fabricating the same

Номер патента: US20160163824A1. Автор: Min-Hwa Chi,Xusheng Wu,Dong-woon Shin. Владелец: Globalfoundries Inc. Дата публикации: 2016-06-09.

PRODUCTION OF AN INTEGRATED CIRCUIT INCLUDING ELECTRICAL CONTACT ON SiC

Номер патента: US20130193449A1. Автор: Roland Rupp,Thomas Gutt,Michael Treu. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2013-08-01.

PRODUCTION OF AN INTEGRATED CIRCUIT INCLUDING ELECTRICAL CONTACT ON SiC

Номер патента: US20150041831A1. Автор: Roland Rupp,Thomas Gutt,Michael Treu. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2015-02-12.

Integrated circuit including dipole incorporation for threshold voltage tuning in transistors

Номер патента: US20240145470A1. Автор: Chih-Hao Wang,Chung-Wei Hsu,Mao-Lin Huang,Lung-Kun Chu,Jia-Ni YU,Kuo-Cheng Chiang,Kuan-Lun Cheng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-05-02.

Production of an integrated circuit including electrical contact on SiC

Номер патента: US8450196B2. Автор: Roland Rupp,Thomas Gutt,Michael Treu. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2013-05-28.

Circuit Including Configuration Terminal and Method

Номер патента: US20200373291A1. Автор: Winfried Bakalski,Andreas Baenisch. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2020-11-26.

Integrated circuit including a metal pillar in contact with a silicon region on an ohmic coupling region, and corresponding manufacturing method

Номер патента: US20230326947A1. Автор: Magali Gregoire,Joel Schmitt. Владелец: STMicroelectronics Crolles 2 SAS. Дата публикации: 2023-10-12.

Integrated circuit including ESD protection modules

Номер патента: US11798934B2. Автор: Hongquan Sun,Wangsheng Xie. Владелец: Huawei Technologies Co Ltd. Дата публикации: 2023-10-24.

Integrated circuits including selectively deposited metal capping layers on copper lines and methods for fabricating the same

Номер патента: US20150194344A1. Автор: Moosung Chae,Larry Zhao. Владелец: Globalfoundries Inc. Дата публикации: 2015-07-09.

Semiconductor integrated circuit including memory cells

Номер патента: US9059036B2. Автор: Kazuhiro Abe. Владелец: Fujitsu Ltd. Дата публикации: 2015-06-16.

Integrated circuit including esd protection modules

Номер патента: US20210272948A1. Автор: Hongquan Sun,Wangsheng Xie. Владелец: Huawei Technologies Co Ltd. Дата публикации: 2021-09-02.

Gate array integrated circuit including a unit cell basic layer having gate terminal regions allowing two contact pads to be disposed laterally

Номер патента: US20060060889A1. Автор: Hirofumi Uchida. Владелец: Oki Electric Industry Co Ltd. Дата публикации: 2006-03-23.

Superconducting apparatus including superconducting layers and traces

Номер патента: US20190097118A1. Автор: David B. Tuckerman,Richard P. Rouse. Владелец: Microsoft Technology Licensing LLC. Дата публикации: 2019-03-28.

Superconducting apparatus including superconducting layers and traces

Номер патента: US20200243743A1. Автор: David B. Tuckerman,Richard P. Rouse. Владелец: Microsoft Technology Licensing LLC. Дата публикации: 2020-07-30.

Superconducting circuit mounting structure

Номер патента: JP2993926B2. Автор: 博紀 星崎,雅志 布施. Владелец: 株式会社移動体通信先端技術研究所. Дата публикации: 1999-12-27.

Superconducting Circuit, Production Method of Superconducting Joints, Superconducting Magnet, and Production Method of Superconducting Magnet

Номер патента: US20110028327A1. Автор: Michiya Okada,Masaya Takahashi,Motomune Kodama. Владелец: HITACHI LTD. Дата публикации: 2011-02-03.

Superconducting circuit, production method of superconducting joints, superconducting magnet, and production method of superconducting magnet

Номер патента: EP2284916A3. Автор: Michiya Okada,Masaya Takahashi,Motomune Kodama. Владелец: HITACHI LTD. Дата публикации: 2011-04-27.

Flux-trapping magnetic films in superconducting circuits

Номер патента: US20230260679A1. Автор: Daniel Robert Queen. Владелец: Northrop Grumman Systems Corp. Дата публикации: 2023-08-17.

Flux-trapping magnetic films in superconducting circuits

Номер патента: WO2023154167A1. Автор: Daniel Robert Queen. Владелец: Northrop Grumman Systems Corporation. Дата публикации: 2023-08-17.

Superconducting circuit for processing input signals

Номер патента: EP3921940A1. Автор: Quentin P. Herr,Haitao O. Dai,Jonathan D. Egan,James F. Wise. Владелец: Microsoft Technology Licensing LLC. Дата публикации: 2021-12-15.

High power superconductive circuits and method of construction thereof

Номер патента: CA2166014C. Автор: Raafat R. Mansour. Владелец: Com Dev Ltd. Дата публикации: 1998-02-24.

High-density cryogenic wiring for superconducting qubit control

Номер патента: US11823811B2. Автор: Steven J. Weber,Kyle J. Thompson,John A. Rokosz,John D. Cummings. Владелец: Massachusetts Institute of Technology. Дата публикации: 2023-11-21.

Apparatus and method for manufacturing integrated circuit including clock network

Номер патента: US20190332934A1. Автор: In Hak HAN. Владелец: BAUM Co Ltd. Дата публикации: 2019-10-31.

Spiral coil and wireless power transmission and reception circuit including the same

Номер патента: US11862382B2. Автор: Seong-Min Kim,Sang-Won Kim,Gwangzeen Ko,Jung Ick Moon,In Kui Cho. Владелец: Electronics and Telecommunications Research Institute ETRI. Дата публикации: 2024-01-02.

Spiral coil and wireless power transmission and reception circuit including the same

Номер патента: US20230317356A1. Автор: Seong-Min Kim,Sang-Won Kim,Gwangzeen Ko,Jung Ick Moon,In Kui Cho. Владелец: Electronics and Telecommunications Research Institute ETRI. Дата публикации: 2023-10-05.

Spike neural network circuit including input spike detecting circuit and operating method thereof

Номер патента: US20230385618A1. Автор: Jae-Jin Lee,Kwang Il Oh,Dongwon Lee,Byung-Do Yang. Владелец: Electronics and Telecommunications Research Institute ETRI. Дата публикации: 2023-11-30.

High-frequency circuit including a circuit board and a waveguide structure

Номер патента: US20220140488A1. Автор: Michael Schoor,Klaus Voigtlaender,Klaus Baur,Ronny Ludwig,Gustav Klett,Christian Hollaender. Владелец: ROBERT BOSCH GMBH. Дата публикации: 2022-05-05.

Spike neural network circuit including radiation source

Номер патента: US20190311244A1. Автор: Jae-Jin Lee,Sung Eun Kim,Kwang Il Oh,Tae Wook Kang,Seong Mo Park,Byounggun Choi. Владелец: Electronics and Telecommunications Research Institute ETRI. Дата публикации: 2019-10-10.

High-frequency circuit including a circuit board and a waveguide structure

Номер патента: US12010790B2. Автор: Michael Schoor,Klaus Voigtlaender,Klaus Baur,Ronny Ludwig,Gustav Klett,Christian Hollaender. Владелец: ROBERT BOSCH GMBH. Дата публикации: 2024-06-11.

High-frequency switch circuit and front-end circuit including same

Номер патента: US20210320389A1. Автор: Taizo Tatsumi. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2021-10-14.

Spike neural network circuit including probabilistic operator

Номер патента: US20230259745A1. Автор: Hyuk Kim,Jae-Jin Lee,Kwang Il Oh,Tae Wook Kang,In San Jeon. Владелец: Electronics and Telecommunications Research Institute ETRI. Дата публикации: 2023-08-17.

Circuits including a titanium substrate

Номер патента: US20040139598A1. Автор: Walter Berryman. Владелец: Individual. Дата публикации: 2004-07-22.

Radio frequency power divider and circuit including the same

Номер патента: US20230327312A1. Автор: Qian Wan,Jun Ding,Xiaoqin ZHANG,Linxiang Zhan,Hairong Xie. Владелец: Telefonaktiebolaget LM Ericsson AB. Дата публикации: 2023-10-12.

Superconducting circuits

Номер патента: GB1028484A. Автор: . Владелец: Ford Motor Co Ltd. Дата публикации: 1966-05-04.

SUPERCONDUCTING CIRCUIT WITH VIRTUAL TIMING ELEMENTS AND RELATED METHODS

Номер патента: US20210064718A1. Автор: Muff Adam J.,Kupferschmidt Mark G.,Schneider Janet L.,Reneris Kenneth,BRAUN ALEXANDER L.,Koehler Brian L.,Ii Alison. Владелец: . Дата публикации: 2021-03-04.

Nfc device powered on in response to radio frequency signal, nfc tag circuit included therein, and method of operating the nfc device

Номер патента: EP4412096A1. Автор: Sung Wan Kim,Sung Hun Chun,Pyeong Han Lee,Kwang Beom PARK,Chang Ho RYU. Владелец: 3A LOGICS Inc. Дата публикации: 2024-08-07.

Portable nfc device that releases reset in response to radio frequency signal, and nfc tag circuit included therein

Номер патента: US20240256816A1. Автор: Sung Wan Kim,Sung Hun Chun,Pyeong Han Lee,Kwang Beom PARK,Chang Ho RYU. Владелец: 3A LOGICS Inc. Дата публикации: 2024-08-01.

Portable nfc device that releases reset in response to radio frequency signal, and nfc tag circuit included therein

Номер патента: EP4412095A1. Автор: Sung Wan Kim,Sung Hun Chun,Pyeong Han Lee,Kwang Beom PARK,Chang Ho RYU. Владелец: 3A LOGICS Inc. Дата публикации: 2024-08-07.

Integrated circuit including back side conductive lines for clock signals

Номер патента: US20210344346A1. Автор: Kam-Tou SIO,Jiun-Wei Lu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-11-04.

Receiver, interface circuit including the same, and method of operating receiver

Номер патента: US20240223233A1. Автор: Youngho Choi,Kyeongjoon Ko,Donghyuk LIM,Dasom PARK,Byoungjoo Yoo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-04.

Receiver, interface circuit including the same, and method of operating receiver

Номер патента: EP4398119A1. Автор: Youngho Choi,Kyeongjoon Ko,Donghyuk LIM,Dasom PARK,Byoungjoo Yoo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-10.

Asymmetric nand gate circuit, clock gating cell and integrated circuit including the same

Номер патента: EP4366170A3. Автор: Byounggon Kang,Dalhee Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-31.

Logic circuit including combined pass transistor and CMOS circuits and a method of synthesizing the logic circuit

Номер патента: US20020180486A1. Автор: Kazuo Yano,Shunzo Yamashita. Владелец: Individual. Дата публикации: 2002-12-05.

Semiconductor device having diode connectedto memory device and circuit including the same

Номер патента: US11950409B2. Автор: Hsih-Yang Chiu. Владелец: Nanya Technology Corp. Дата публикации: 2024-04-02.

Semiconductor integrated circuit including semiconductor memory

Номер патента: US20110176347A1. Автор: Toshiki Hisada,Hiromitsu Mashita. Владелец: Individual. Дата публикации: 2011-07-21.

Power management circuit including on-board current-sense resistor and on-die current sensor

Номер патента: US11829168B2. Автор: Richard Gerard Hofmann,Lipeng Cao,Matthew Severson,Timothy Zoley,Kevin Bradley Citterelle. Владелец: Qualcomm Inc. Дата публикации: 2023-11-28.

Power management circuit including on-board current-sense resistor and on-die current sensor

Номер патента: EP4070119A1. Автор: Richard Gerard Hofmann,Lipeng Cao,Matthew Severson,Timothy Zoley,Kevin Bradley Citterelle. Владелец: Qualcomm Inc. Дата публикации: 2022-10-12.

Monitoring circuit including cascaded s-boxes for fault injection attack protection

Номер патента: US11449606B1. Автор: Sudhir Satpathy,Wojciech Stefan Powiertowski,Nagendra Gupta Modadugu,Neeraj UPASANI. Владелец: Facebook Technologies LLC. Дата публикации: 2022-09-20.

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Номер патента: US20190036443A1. Автор: Kim Sung-Jun,SHIN JONG-SHIN. Владелец: . Дата публикации: 2019-01-31.

Superconducting circuit preparation method and superconducting quantum chip

Номер патента: CN113036030B. Автор: 郑杰,马亮亮,尤兵,刘文书,王念慈. Владелец: Origin Quantum Computing Technology Co Ltd. Дата публикации: 2022-04-12.

Superconducting circuit preparation method and superconducting quantum chip

Номер патента: EP4228013A4. Автор: Jie Zheng,Liangliang Ma,Bing YOU,Nianci WANG,Wenshu LIU. Владелец: Origin Quantum Computing Technology Hefei Co Ltd. Дата публикации: 2024-05-29.

Surface participation analysis of superconducting qubits with the boundary element method

Номер патента: US20190377845A1. Автор: Firat Solgun. Владелец: International Business Machines Corp. Дата публикации: 2019-12-12.

Surface participation analysis of superconducting qubits with the boundary element method

Номер патента: WO2019238493A1. Автор: Firat Solgun. Владелец: Ibm United Kingdom Limited. Дата публикации: 2019-12-19.

Surface participation analysis of superconducting qubits with the boundary element method

Номер патента: EP3807791A1. Автор: Firat Solgun. Владелец: International Business Machines Corp. Дата публикации: 2021-04-21.

Superconducting circuit, qubit device and method of making the same

Номер патента: CN114823774A. Автор: 高强,李坤锋,马亮亮,苗强强,苏义旭,谈飞洋,肖佳宝. Владелец: Origin Quantum Computing Technology Co Ltd. Дата публикации: 2022-07-29.

Low temperature deposition of low loss dielectric layers in superconducting circuits

Номер патента: US9455393B1. Автор: Mark Clark,Ashish Bodke,Frank Greer. Владелец: Intermolecular Inc. Дата публикации: 2016-09-27.

Josephson junction, josephson junction preparation method and apparatus, and superconducting circuit

Номер патента: EP4193395A4. Автор: Xiangsheng Gu,Jingwei Zhou,Wenlong YU,Xiaohang Zhang. Владелец: Alibaba Group Holding Ltd. Дата публикации: 2024-01-24.

SYSTEMS AND METHODS FOR ADDRESSING DEVICES IN A SUPERCONDUCTING CIRCUIT

Номер патента: US20210057631A1. Автор: Rich Christopher B.,Swenson Loren J.,Sterling George E.G.. Владелец: . Дата публикации: 2021-02-25.

Contact for superconductive circuit

Номер патента: JPS58157181A. Автор: Hiroshi Nakagawa,博 仲川,Hidekazu Sokawa,曽川　英一. Владелец: Agency of Industrial Science and Technology. Дата публикации: 1983-09-19.

Sacrificial shorting straps for superconducting qubits

Номер патента: US20170062228A1. Автор: Josephine B. Chang,Douglas T. McClure, III. Владелец: International Business Machines Corp. Дата публикации: 2017-03-02.

Sacrificial shorting straps for superconducting qubits

Номер патента: US20160343935A1. Автор: Josephine B. Chang,Douglas T. McClure, III. Владелец: International Business Machines Corp. Дата публикации: 2016-11-24.

Sacrificial shorting straps for superconducting qubits

Номер патента: US9705063B2. Автор: Josephine B. Chang,Douglas T. McClure, III. Владелец: International Business Machines Corp. Дата публикации: 2017-07-11.

Sacrificial shorting straps for superconducting qubits

Номер патента: US10032637B2. Автор: Josephine B. Chang,Douglas T. McClure, III. Владелец: International Business Machines Corp. Дата публикации: 2018-07-24.

Sacrificial shorting straps for superconducting qubits

Номер патента: US20180174852A1. Автор: Josephine B. Chang,Douglas T. McClure, III. Владелец: International Business Machines Corp. Дата публикации: 2018-06-21.

Integrated circuit including standard cells, a method of designing a layout including the same, and a computing system therefor

Номер патента: US20230083727A1. Автор: Min Su Kim,Jong Woo Kim,Eun-Hee CHOI,Seung Man LIM,Sang Jin CHEONG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-03-16.

Operating method of floating point operation circuit and integrated circuit including floating point operation circuit

Номер патента: US20230004349A1. Автор: Joong Baik Kim,Yongmin JUNG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-01-05.

Operating method of floating point operation circuit and integrated circuit including floating point operation circuit

Номер патента: EP4113277A1. Автор: Joong Baik Kim,Yongmin JUNG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-01-04.

An integrated circuit including a programmable logic analyzer with enhanced analyzing and debugging capabilities and a method therefor

Номер патента: WO2011022480A1. Автор: James Alan Ward,James Ray Bailey. Владелец: Lexmark International, Inc.. Дата публикации: 2011-02-24.

Circuits including non-linear components for electronic devices

Номер патента: US12075656B2. Автор: Sean William MUIR. Владелец: Amorphyx Inc. Дата публикации: 2024-08-27.

Static random-access memory (sram) array circuits including bilateral well tap cells with reduced width folded finger structure

Номер патента: WO2022212979A1. Автор: Sunil Sharma,Anne Srikanth,Yandong Gao,Channappa Desai,Pradeep Jayadev Kodlipet. Владелец: QUALCOMM INCORPORATED. Дата публикации: 2022-10-06.

Behavioral synthesis of circuits including high impedance buffers

Номер патента: US5299137A. Автор: Christopher H. Kingsley. Владелец: VLSI Technology Inc. Дата публикации: 1994-03-29.

Power management circuit including on-board current sensing across inductor and on-die current limit detection circuit

Номер патента: US11829172B2. Автор: Vijayakumar Ashok DIBBAD,Matthew Severson,Fredrick Bontemps,Timothy Zoley. Владелец: Qualcomm Inc. Дата публикации: 2023-11-28.

Power management circuit including on-board current sensing across inductor and on-die current limit detection circuit

Номер патента: WO2023164362A1. Автор: Vijayakumar Ashok DIBBAD,Matthew Severson,Fredrick Bontemps,Timothy Zoley. Владелец: QUALCOMM INCORPORATED. Дата публикации: 2023-08-31.

Touch sensing circuit including adjustable filter and touch sensing method thereof

Номер патента: US11797128B2. Автор: Jae Hwan Lee,Hyun Soo Chung,Kyu Tae Lee,Mun Seok Kang,Jeong Kwon NAM,Jin Yoon JANG,Hee Ra YUN. Владелец: LX Semicon Co Ltd. Дата публикации: 2023-10-24.

Method of making in an integrated circuit including simplifying metal shapes

Номер патента: US20110113400A1. Автор: Olivier Rizzo,Hanno Melzner,Jacques Herry. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2011-05-12.

An integrated circuit including a programmable logic analyzer with enhanced analyzing and debugging capabilities and a method therefor

Номер патента: CA2807125C. Автор: James Ray Bailey. Владелец: Lexmark International Inc. Дата публикации: 2018-02-27.

Scan flip-flop, flip-flop and scan test circuit including the same

Номер патента: US20210152162A1. Автор: RAHEEL Azmat,Jaeseok Yang,Taehyung Kim,Jinwoo Jeong,Jaehyoung Lim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-05-20.

Shift array circuit and arithmetic circuit including the shift array circuit

Номер патента: US20240118866A1. Автор: Choung Ki Song,Seong Ju Lee. Владелец: SK hynix Inc. Дата публикации: 2024-04-11.

Method and apparatus to implement an integrated circuit including both dynamic random-access memory (dram) and static random-access memory (sram)

Номер патента: US20230315331A1. Автор: Rajabali Koduri,Pushkar Ranade,Wilfred Gomes,Abhishek Anil Sharma. Владелец: Intel Corp. Дата публикации: 2023-10-05.

Semiconductor device having diode connectedto memory device and circuit including the same

Номер патента: US20230320081A1. Автор: Hsih-Yang Chiu. Владелец: Nanya Technology Corp. Дата публикации: 2023-10-05.

Transistor circuits including fringeless transistors and method of making the same

Номер патента: US12027520B2. Автор: Hiroyuki Ogawa,Dai Iwata,Akihiro YUU. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-07-02.

Charge transfer device and a semiconductor circuit including the device

Номер патента: US6510193B1. Автор: Mamoru Miyawaki,Tetsunobu Kochi. Владелец: Canon Inc. Дата публикации: 2003-01-21.

Silicon carbide integrated circuit including P-N junction photodiode

Номер патента: US10763284B1. Автор: Neil Goldsman,Zeynep Dilli,Akin Akturk,Brendan Michael Cusack,Mitchell Adrian Gross. Владелец: CoolCAD Electronics LLC. Дата публикации: 2020-09-01.

Integrated circuit including memory, and write method

Номер патента: US20180261287A1. Автор: Shinichi Yasuda,Mari Matsumoto. Владелец: Toshiba Corp. Дата публикации: 2018-09-13.

Semiconductor devices and display driver integrated circuits including the semiconductor devices

Номер патента: US20200303303A1. Автор: Myoung Soo Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-09-24.

Static random-access memory (sram) array circuits including bilateral well tap cells with reduced width folded finger structure

Номер патента: EP4315335A1. Автор: Sunil Sharma,Anne Srikanth,Yandong Gao,Channappa Desai,Pradeep Jayadev Kodlipet. Владелец: Qualcomm Inc. Дата публикации: 2024-02-07.

Photonic integrated circuit including plurality of discrete optical guard elements

Номер патента: US20240094465A1. Автор: Karen A. Nummy,Yusheng Bian,Mark D. Levy,Zhuojie Wu,Ramsey HAZBUN,Siva P. Adusumilli. Владелец: GlobalFoundries US Inc. Дата публикации: 2024-03-21.

SEMICONDUCTOR DEVICE, DISPLAY DRIVER INTEGRATED CIRCUIT INCLUDING THE DEVICE, AND DISPLAY DEVICE INCLUDING THE DEVICE

Номер патента: US20160125833A1. Автор: Kim Myoung-Soo. Владелец: . Дата публикации: 2016-05-05.

Superconductive circuits

Номер патента: CA648939A. Автор: E. Brennemann Andrew,J. Kahan George,Tsang-Chu Tsui Robert. Владелец: International Business Machines Corp. Дата публикации: 1962-09-18.

Arc Inducing Type Superconducting Circuit Breaker System for Direct Current

Номер патента: KR101839848B1. Автор: 박상용,이유경,정인성,황선호,김준범,최혜원,조진태,최효상,박노아. Владелец: 조선대학교산학협력단. Дата публикации: 2018-05-04.

Superconducting circuits

Номер патента: FR79006E. Автор: . Владелец: International Business Machines Corp. Дата публикации: 1962-10-13.

Device for generating a current in a superconducting circuit

Номер патента: CH401229A. Автор: Volger Jan. Владелец: Philips Nv. Дата публикации: 1965-10-31.

Superconducting circuits

Номер патента: FR83882E. Автор: . Владелец: International Business Machines Corp. Дата публикации: 1964-10-31.

Switch device and circuit including switch device

Номер патента: US20120168290A1. Автор: Shinobu Fujita. Владелец: Individual. Дата публикации: 2012-07-05.

Photonic integrated circuit including semiconductor optical amplifiers

Номер патента: US20240291568A1. Автор: Peter Evans,Scott Corzine,Mehrdad Ziari,Vikrant Lal,Thomas Frost,David Henry Welch. Владелец: Infinera Corp. Дата публикации: 2024-08-29.

Photonic integrated circuit including semiconductor optical amplifiers

Номер патента: US20240288749A1. Автор: Peter Evans,Scott Corzine,David Welch,Mehrdad Ziari,Vikrant Lal,Thomas Frost. Владелец: Infinera Corp. Дата публикации: 2024-08-29.

Photonic integrated circuit including semiconductor optical amplifiers

Номер патента: US20240291566A1. Автор: Peter Evans,Scott Corzine,David Welch,Mehrdad Ziari,Vikrant Lal,Thomas Frost. Владелец: Infinera Corp. Дата публикации: 2024-08-29.

Photonic integrated circuit including semiconductor optical amplifiers

Номер патента: US20240291567A1. Автор: Peter Evans,Mehrdad Ziari,Daniel Semrau. Владелец: Infinera Corp. Дата публикации: 2024-08-29.

Photonic integrated circuit including semiconductor optical amplifiers

Номер патента: US20240288632A1. Автор: Peter Evans,Mehrdad Ziari,Daniel Semrau. Владелец: Infinera Corp. Дата публикации: 2024-08-29.

Electrical circuit including a supercapacitor with reduced leakage

Номер патента: US11387054B2. Автор: Shawn Hansen. Владелец: Kyocera Avx Components Corp. Дата публикации: 2022-07-12.

Electrical circuit including a supercapacitor with reduced leakage

Номер патента: EP3756202A1. Автор: Shawn Hansen. Владелец: AVX Corp. Дата публикации: 2020-12-30.

Superconducting circuit

Номер патента: US11764780B2. Автор: Yuichi Igarashi,Aiko Yamaguchi. Владелец: NEC Corp. Дата публикации: 2023-09-19.

Superconducting circuit

Номер патента: US20230127101A1. Автор: Yuichi Igarashi,Aiko Yamaguchi. Владелец: NEC Corp. Дата публикации: 2023-04-27.

Superconducting circuits and methods for latching data

Номер патента: EP3891888A1. Автор: Alexander L. Braun. Владелец: Microsoft Technology Licensing LLC. Дата публикации: 2021-10-13.

Superconducting circuit and method for detecting a rising edge of an input signal

Номер патента: EP3891887A1. Автор: Alexander L. Braun. Владелец: Microsoft Technology Licensing LLC. Дата публикации: 2021-10-13.

Integrated circuit of superconducting circuit blocks and method of designing the same

Номер патента: US20030034794A1. Автор: Shinichi Yorozu,Yoshio Kameda. Владелец: NEC Corp. Дата публикации: 2003-02-20.

Integrated circuit of superconducting circuit blocks and method of designing the same

Номер патента: US6703857B2. Автор: Shinichi Yorozu,Yoshio Kameda. Владелец: NEC Corp. Дата публикации: 2004-03-09.

Method of managing electronic circuit including thermal protection device and corresponding electronic circuit

Номер патента: RU2672568C2. Автор: Анжело ПАСКАЛЕТТО,Жан-Мари КЭНТЭН. Владелец: Континенталь Отомотив Франс. Дата публикации: 2018-11-16.

Charger integrated circuit including switching converter and electronic device including the charger integrated circuit

Номер патента: US20240235368A1. Автор: Sungwoo Moon,Sungwoo Lee,Daewoong CHO,Jungwook HEO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-11.

Exciter drive circuit including configurable flyback unit with fast energy field collapse

Номер патента: US20180019691A1. Автор: Adrian E. Vandergrift. Владелец: Hamilton Sundstrand Corp. Дата публикации: 2018-01-18.

Motor vehicle circuit protection device and motor vehicle circuit including the same

Номер патента: US20220069569A1. Автор: Che-Hung Lin,Chia-Chun Yu. Владелец: JUTE INDUSTRIAL Co Ltd. Дата публикации: 2022-03-03.

Cascode power amplification circuits, including voltage protection circuits

Номер патента: WO2023150259A1. Автор: Hui Liu,Baker Scott,George Maxim,Stephen James Franck. Владелец: QORVO US, INC.. Дата публикации: 2023-08-10.

Delay circuit and electronic circuit including delay circuit

Номер патента: US20060214715A1. Автор: Hajime Takashima. Владелец: Sanyo Electric Co Ltd. Дата публикации: 2006-09-28.

Integrated circuit including a combined logic cell

Номер патента: US20230061062A1. Автор: Badarish Mohan Subbannavar,Rakesh DIMRI,Mohammad Asif Farooqui,Somasekar J. Владелец: Texas Instruments Inc. Дата публикации: 2023-03-02.

Integrated circuit including phase locked loop circuit

Номер патента: US20200021298A1. Автор: Woo Seok Kim,Tae Ik Kim,Gyu Sik Kim,Hwan Seok YEO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-01-16.

Integrated electronic circuit including non-linear devices

Номер патента: US20030058024A1. Автор: Maurizio Zuffada,Martin Hassner,Giorgio Betti,Francesco Chrappan Soldavini. Владелец: STMICROELECTRONICS SRL. Дата публикации: 2003-03-27.

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Номер патента: US11962311B2. Автор: Seunghyun Oh,Seungjin Kim,Gyusik Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-04-16.

Integrated electronic circuit including non-linear inductor devices

Номер патента: US20030058025A1. Автор: Maurizio Zuffada,Martin Hassner,Giorgio Betti,Francesco Chrappan Soldavini. Владелец: STMICROELECTRONICS SRL. Дата публикации: 2003-03-27.

Analog-digital converting circuit including comparator, and image sensor including the analog-digital converting circuit

Номер патента: US20240048870A1. Автор: Heesung Chae,Sunyool Kang,Yunhwan Jung,Yongjun CHO,Haesick Sul. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-02-08.

Analog-digital converting circuit including comparator, and image sensor including the analog-digital converting circuit

Номер патента: EP4319179A1. Автор: Heesung Chae,Sunyool Kang,Yunhwan Jung,Yongjun CHO,Haesick Sul. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-02-07.

Integrated circuit including filter circuit arrangement

Номер патента: US20090167426A1. Автор: Elmar Bach,Stefan Hermann Groiss. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2009-07-02.

Communication within an integrated circuit including an array of interconnected programmable logic elements

Номер патента: WO2010079326A3. Автор: Stephen John Hill,Michael Peter Muller. Владелец: ARM LIMITED. Дата публикации: 2010-09-02.

Semiconductor integrated circuit including internal circuits and electrostatic discharge protection circuits

Номер патента: US20110310515A1. Автор: Hirofumi Hayashi. Владелец: Renesas Electronics Corp. Дата публикации: 2011-12-22.

Amplifying circuit and analog-digital converting circuit including same

Номер патента: US20110234440A1. Автор: Takumi DANJO. Владелец: Fujitsu Ltd. Дата публикации: 2011-09-29.

Scan flip-flop circuits and scan test circuits including the same

Номер патента: US20130241594A1. Автор: Bai-Sun Kong,Hoi-Jin Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2013-09-19.

Semiconductor circuit including flip-flop

Номер патента: US20170070214A1. Автор: Min-Su Kim,Matthew Berzins,San-Ha Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-03-09.

Communication within an integrated circuit including an array of interconnected programmable logic elements

Номер патента: WO2010079326A2. Автор: Stephen John Hill,Michael Peter Muller. Владелец: ARM LIMITED. Дата публикации: 2010-07-15.

Digital loop filter of low latency and low operation and clock data recovery circuit including the same

Номер патента: US12068752B2. Автор: Jaehyun Park,Seuk SON,Juyun LEE,Hyeonju Lee,Kangjik Kim,Sunggeun KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-08-20.

Low-noise amplifier circuit including band-stop filter

Номер патента: US20090108944A1. Автор: Chih-Hung Chen,Ming-Ching Kuo,Hsiao-Wen Kao. Владелец: Industrial Technology Research Institute ITRI. Дата публикации: 2009-04-30.

Bidirectional i/o circuit and integrated circuit including bidirectional i/o circuit

Номер патента: US20240178839A1. Автор: Jungho Kim,Wanchul KONG. Владелец: Key Foundry Co Ltd. Дата публикации: 2024-05-30.

Current steering dac, a video adapter including a current steering dac, and a video circuit including a current steering dac

Номер патента: US20140063348A1. Автор: Rene Verlinden. Владелец: NXP BV. Дата публикации: 2014-03-06.

Reference Buffer Circuits Including a Non-linear Feedback Factor

Номер патента: US20160164522A1. Автор: Shouli Yan,Mohamed Mostafa Elsayed. Владелец: Silicon Laboratories Inc. Дата публикации: 2016-06-09.

Level shifter and driving circuit including the same

Номер патента: US7893730B2. Автор: Sang-Hwa Jung,Han-Seung Lee. Владелец: Silicon Mitus Inc. Дата публикации: 2011-02-22.

Signal combining circuit, signal processing circuit including the signal combining circuit,stereophonic audio reproduction system including the signal processing circuit, and an audio-visual reproduction system including the stereophonic audio reproduction system

Номер патента: MY112795A. Автор: Maria Aarts Ronaldus. Владелец: KONINKLIJKE PHILIPS ELECTRONICS NV. Дата публикации: 2001-09-29.

Integrated circuit including resonant circuit

Номер патента: US11843351B2. Автор: Lei Lu,Qing MIN,Jichao HUANG. Владелец: Huawei Technologies Co Ltd. Дата публикации: 2023-12-12.

Integrated circuit including resonant circuit

Номер патента: US20210297043A1. Автор: Lei Lu,Qing MIN,Jichao HUANG. Владелец: Huawei Technologies Co Ltd. Дата публикации: 2021-09-23.

Scalable power supply circuit including protection features

Номер патента: WO2014134612A2. Автор: Victor Simi. Владелец: OSRAM SYLVANIA INC.. Дата публикации: 2014-09-04.

Optimization system and method for integrated circuits including multi-phase level-sensitive latches

Номер патента: WO2018132131A1. Автор: Bao Liu. Владелец: Bao Liu. Дата публикации: 2018-07-19.

Photosensor circuits including a switch mode power converter

Номер патента: CA2741444C. Автор: Richard Charles Flaherty. Владелец: Tyco Electronics Corp. Дата публикации: 2017-12-12.

Demodulation circuit including error correction

Номер патента: US6173020B1. Автор: Osami Nishimura. Владелец: NEC Corp. Дата публикации: 2001-01-09.

Switch control circuit including multipin to set dead time information and/or protection mode

Номер патента: US20190157965A1. Автор: Hang-Seok Choi. Владелец: Semiconductor Components Industries LLC. Дата публикации: 2019-05-23.

Communication circuit including amplifier module, and electronic device comprising same

Номер патента: US20230327612A1. Автор: John Moon,Dongil YANG,Yongjun An,Hyoseok NA. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-10-12.

Phase locked loop circuit including digital voltage-controlled oscillator, ring oscillator and selector

Номер патента: US20080211589A1. Автор: Masaki Sano. Владелец: NEC Electronics Corp. Дата публикации: 2008-09-04.

Interface circuit and voltage-raising circuit including such a circuit

Номер патента: US5465069A. Автор: Stephane Bouvier,Marc Boiron. Владелец: US Philips Corp. Дата публикации: 1995-11-07.

Signal transmitting/receiving circuit including an impedance matching circuit

Номер патента: US8472894B2. Автор: Chia-Jun Chang,Po-Chih Wang. Владелец: Realtek Semiconductor Corp. Дата публикации: 2013-06-25.

Hybrid circuit including capacitive charge-transfer means

Номер патента: CA1157124A. Автор: David G. Agnew. Владелец: Northern Telecom Ltd. Дата публикации: 1983-11-15.

Counter circuit using Johnson-type counter and applied circuit including the same

Номер патента: US5321733A. Автор: Masaya Tamamura,Shinichi Shiotsu,Katsunobu Nomura. Владелец: Fujitsu Ltd. Дата публикации: 1994-06-14.

Reconfigurable analog filter and integrated circuit including the same

Номер патента: US20210105007A1. Автор: Jisoo Chang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-04-08.

Integrated circuit including flip-flop and computing system for designing the integrated circuit

Номер патента: US11901902B2. Автор: Ahreum Kim,Minsu Kim,Seungman Lim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-02-13.

Sub-sampling phase locked loop with compensated loop bandwidth and integrated circuit including the same

Номер патента: EP4170909A1. Автор: Seunghyun Oh,Seungjin Kim,Gyusik Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-04-26.

Passive mixer including LLC filter and RF transmitting circuit including passive mixer

Номер патента: US11855665B2. Автор: Wonjun Jung. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-12-26.

DC-to-DC converter and integrated circuit including the same

Номер патента: US11804778B2. Автор: Yunho Lee,Hyungmin Lee,Sangho Kim,Sungmin YOO,Taehwang KONG,Junhyeok YANG,Woojoong JUNG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-10-31.

Differential oscillator having two sides, an integrated circuit including the differential oscillator, a mobile telephone including the differential oscillator, and method of operating the differential oscillator

Номер патента: US7187248B2. Автор: Peter Wardlow Shadwell. Владелец: Sony United Kingdom Ltd. Дата публикации: 2007-03-06.

Supply modulating circuit including switching circuit and wireless communication device including the supply modulating circuit

Номер патента: US20210083635A1. Автор: Youngho Jung,Dongsu Kim,Jiseon PAEK,Junsuk Bang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-03-18.

Power converter circuits including high electron mobility transistors for switching and rectification

Номер патента: US20150049514A1. Автор: Robert Joseph Callanan. Владелец: Cree Inc. Дата публикации: 2015-02-19.

Passive mixer including llc filter and rf transmitting circuit including passive mixer

Номер патента: EP4092908A1. Автор: Wonjun Jung. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-11-23.

Dc-to-dc converter and integrated circuit including the same

Номер патента: US20240030822A1. Автор: Yunho Lee,Hyungmin Lee,Sangho Kim,Sungmin YOO,Taehwang KONG,Junhyeok YANG,Woojoong JUNG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-01-25.

Integrated electronic circuit including non-linear devices

Номер патента: US6777998B2. Автор: Maurizio Zuffada,Martin Aureliano Hassner,Giorgio Betti,Francesco Chrappan Soldavini. Владелец: International Business Machines Corp. Дата публикации: 2004-08-17.

Communication circuit including amplifier module and electronic device comprising same

Номер патента: EP4395186A1. Автор: John Moon,Hyoseok NA. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-03.

Method and apparatus for reducing switching noise in a system-on-chip (SoC) integrated circuit including an analog-to-digital converter (ADC)

Номер патента: US7515076B1. Автор: Rahul Singh,Jie Fang,Mohit Sood,Prashanth Drakshapalli,Edwin de Angel. Владелец: Cirrus Logic Inc. Дата публикации: 2009-04-07.

Horizontal deflection circuit including protection for output transistor

Номер патента: CA1141024A. Автор: Archie M. Barter. Владелец: Tektronix Inc. Дата публикации: 1983-02-08.

Switched-mode power supply circuit including a starting circuit

Номер патента: US5041956A. Автор: Antonius A. M. Marinus. Владелец: US Philips Corp. Дата публикации: 1991-08-20.

Data decoding circuit including phase-locked loop timing

Номер патента: CA1301283C. Автор: Russell Brown,Bernardo Rub,Michael Leis,Michael J. Muchnik,Elmer Simmons. Владелец: Digital Equipment Corp. Дата публикации: 1992-05-19.

Input circuit and semiconductor integrated circuit including the same

Номер патента: US8482321B2. Автор: Yuji Nakajima. Владелец: Renesas Electronics Corp. Дата публикации: 2013-07-09.

Electron beam deflection circuit including thyristors

Номер патента: US3906306A. Автор: Andre Lamoureux. Владелец: Thomson CSF SA. Дата публикации: 1975-09-16.

Circuit and Method for Controlling Rectifier, and Circuit Including the Rectifier

Номер патента: US20230402932A1. Автор: Ying Cao,Donghao LI,Jiashen TIAN,Huajuan XIAO. Владелец: Telefonaktiebolaget LM Ericsson AB. Дата публикации: 2023-12-14.

Flip-flop circuit including control signal generation circuit

Номер патента: US11863188B2. Автор: Byounggon Kang,Dalhee Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-01-02.

Analog-to-digital converting circuit and accumulation circuit including the same

Номер патента: US8810444B2. Автор: Hee Chang Hwang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2014-08-19.

Decoder circuit including decoders with respective performance and power levels and decoding respective subsets of codewords of received data

Номер патента: US11863204B2. Автор: Mario R. Hueda,Mario A. Castrillon,Damián A. Morero,Genaro Bergero,Cristian Cavenio,Teodoro Goette,Martin Asinari,Ramiro R. Lopez. Владелец: Marvell Asia Pte Ltd. Дата публикации: 2024-01-02.

Switching regulator and power management integrated circuit including the same

Номер патента: US20240088788A1. Автор: Hyun Seok Nam,Jeong Woon Kong. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-03-14.

Amplifying circuit and analog-digital converting circuit including same

Номер патента: US8339296B2. Автор: Takumi DANJO. Владелец: Fujitsu Ltd. Дата публикации: 2012-12-25.

Circuit and method for controlling rectifier, and circuit including the rectifier

Номер патента: EP4241374A1. Автор: Ying Cao,Donghao LI,Jiashen TIAN,Huajuan XIAO. Владелец: Telefonaktiebolaget LM Ericsson AB. Дата публикации: 2023-09-13.

Buffer control circuit and integrated circuit including the same

Номер патента: US20120262323A1. Автор: Taek-Sang Song,Dae-Han Kwon. Владелец: Hynix Semiconductor Inc. Дата публикации: 2012-10-18.

Pre-amplifier circuit including microphone pre-amplifier stage

Номер патента: US20170346450A1. Автор: Sebastiaan DE VRIES. Владелец: Tymphany Hong Kong Ltd. Дата публикации: 2017-11-30.

Analog-to-digital converting circuit and accumulation circuit including the same

Номер патента: US20130257636A1. Автор: Hee Chang Hwang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2013-10-03.

Power supply circuit including voltage regulator and headphone driving circuit employing the same

Номер патента: US20110222702A1. Автор: Min Soo Kim,Jin Ho Oh,Yeongha Choi,Jae-Hee WON. Владелец: Neofidelity Inc. Дата публикации: 2011-09-15.

SUPERCONDUCTIVE CIRCUIT DEVICE.

Номер патента: DE3875473T2. Автор: Yasuo Suzuki,Nobuhiro Hara,Naofumi Tada,Katsuzo Aihara,Masahiro Ogihara,Katsuo Kouriki. Владелец: HITACHI LTD. Дата публикации: 1993-05-13.

Superconductive circuit device

Номер патента: JPS60177689A. Автор: Ichiro Ishida,一郎 石田. Владелец: Nippon Electric Co Ltd. Дата публикации: 1985-09-11.

Switch for fine adjustment of persistent current loops in superconductive circuits

Номер патента: IL73354A0. Автор: . Владелец: Gen Electric. Дата публикации: 1985-01-31.

Qubit-selective tuning of two-level system in superconducting qubits via optical control

Номер патента: US20240127096A1. Автор: Karthik Balakrishnan,Abram L. Falk,Martin O. Sandberg,Jason S. Orcutt. Владелец: International Business Machines Corp. Дата публикации: 2024-04-18.

Superconducting circuit structure, superconducting quantum chip and superconducting quantum computer

Номер патента: CN110472740B. Автор: 段润尧,晋力京. Владелец: Beijing Baidu Netcom Science And Technology Co Ltd. Дата публикации: 2021-11-19.

Superconducting circuit physical layout system and method

Номер патента: US20160034609A1. Автор: Quentin P. Herr,Anna Y. Herr. Владелец: Northrop Grumman Systems Corp. Дата публикации: 2016-02-04.

Superconducting circuit physical layout system and method

Номер патента: AU2014402329A1. Автор: Quentin P. Herr,Anna Y. Herr. Владелец: Northrop Grumman Systems Corp. Дата публикации: 2017-02-09.

Superconducting circuit with weak coupling section

Номер патента: RU2717253C1. Автор: Варнава Денисович Есин,Николай Николаевич Колесников,Эдуард Валентинович Девятов,Анна Владимировна Тимонина,Олег Олегович Швецов. Владелец: Федеральное государственное бюджетное учреждение науки Институт физики твердого тела Российской академии наук (ИФТТ РАН). Дата публикации: 2020-03-19.

Superconductive circuit breaker

Номер патента: RU2613840C1. Автор: Александр Иванович Мащенко. Владелец: Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский Томский политехнический университет". Дата публикации: 2017-03-21.

Method and Apparatus for Evaluating Quantum Gate in Superconducting Circuit, Device and Storage Medium

Номер патента: US20210232964A1. Автор: Duan Runyao,JIN Lijing. Владелец: BEIJING BAIDU NETCOM SCIENCE AND TECHNOLOGY CO., LTD.. Дата публикации: 2021-07-29.

Manufacture of superconducting circuit device

Номер патента: JPS61125093A. Автор: Ichiro Ishida,一郎 石田. Владелец: Agency of Industrial Science and Technology. Дата публикации: 1986-06-12.

Superconducting circuit physical layout system and method

Номер патента: CA2955690A1. Автор: Quentin P. Herr,Anna Y. Herr. Владелец: Northrop Grumman Systems Corp. Дата публикации: 2016-02-04.

Superconducting circuit with proximity effect

Номер патента: RU2753673C1. Автор: Варнава Денисович Есин,Николай Николаевич Колесников,Эдуард Валентинович Девятов,Анна Владимировна Тимонина,Юрий Семенович Бараш. Владелец: Федеральное государственное бюджетное учреждение науки Институт физики твердого тела Российской академии наук (ИФТТ РАН). Дата публикации: 2021-08-19.

Superconducting circuit physical layout system and method

Номер патента: EP3175378B1. Автор: Quentin P. Herr,Anna Y. Herr. Владелец: Northrop Grumman Systems Corp. Дата публикации: 2021-06-09.

Superconducting circuit

Номер патента: US20050029512A1. Автор: Keiichi Tanabe,Masahiro Horibe,Tsunehiro Hato. Владелец: Fujitsu Ltd. Дата публикации: 2005-02-10.

MEASUREMENT SCHEME FOR SUPERCONDUCTING QUBITS USING LOW-FREQUENCY MICROWAVE SIGNALS WITHIN A DILUTION REFRIGERATOR

Номер патента: US20200333263A1. Автор: Abdo Baleegh. Владелец: . Дата публикации: 2020-10-22.

Measurement scheme for superconducting qubits using low-frequency microwave signals within a dilution refrigerator

Номер патента: IL286612A. Автор: Baleegh ABDO. Владелец: Baleegh ABDO. Дата публикации: 2021-10-31.

Measurement scheme for superconducting qubits using low-frequency microwave signals within a dilution refrigerator

Номер патента: SG11202109799YA. Автор: Baleegh ABDO. Владелец: Ibm. Дата публикации: 2021-10-28.

Methods and circuits for reading and writing pi-state-induced circulating currents into superconducting circuits

Номер патента: WO2024138100A3. Автор: William Robert Reohr. Владелец: William Robert Reohr. Дата публикации: 2024-08-02.

Methods and circuits for reading and writing pi-state-induced circulating currents into superconducting circuits containing magnetic josephson junctions

Номер патента: US20240212733A1. Автор: William Robert Reohr. Владелец: Individual. Дата публикации: 2024-06-27.

Methods and circuits for reading and writing pi-state-induced circulating currents into superconducting circuits containing magnetic josephson junctions

Номер патента: WO2024138100A2. Автор: William Robert Reohr. Владелец: William Robert Reohr. Дата публикации: 2024-06-27.

Non-volatile memory circuit including voltage divider with phase change memory devices

Номер патента: EP2377128A1. Автор: John C. Costello,Peter J. McElheny,Richard G. Smolen. Владелец: Altera Corp. Дата публикации: 2011-10-19.

Nonvolatile memory sensing circuit including variable current source

Номер патента: US20220068341A1. Автор: Thinh Tran,Ebrahim Abedifard. Владелец: Avalanche Technology Inc. Дата публикации: 2022-03-03.

Non-volatile memory circuit including voltage divider with phase change memory devices

Номер патента: WO2010083087A1. Автор: John C. Costello,Peter J. McElheny,Richard G. Smolen. Владелец: Altera Corporation. Дата публикации: 2010-07-22.

Data driver and display driving circuit including the same

Номер патента: US20200357338A1. Автор: HaJun LEE,Jeongah Ahn,JiYong Jeong. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-11-12.

Test circuit including tap controller selectively outputting test signal based on mode and shift signals

Номер патента: US20100174958A1. Автор: Yoshiyuki Nakamura,Toshiyuki Maeda. Владелец: NEC Electronics Corp. Дата публикации: 2010-07-08.

Negative voltage regulation circuit and voltage generation circuit including the same

Номер патента: US20140167839A1. Автор: Jae-Kwan Kwon. Владелец: SK hynix Inc. Дата публикации: 2014-06-19.

Integrated circuit including memory having limited read

Номер патента: EP2278590A3. Автор: Franz Kreupl,Thomas Happ,Jan Boris Philipp,Peter Schrögmeier,Luca De Ambroggi,Gernot Steinlesberger,Cristian Pho-Duc. Владелец: Qimonda AG. Дата публикации: 2011-03-02.

Semiconductor integrated circuit including a plurality of macros that can be operated although their operational voltages are different from each other

Номер патента: US6577543B2. Автор: Isao Naritake. Владелец: NEC Corp. Дата публикации: 2003-06-10.

Semiconductor integrated circuit including a plurality of macros that can be operated although their operational voltages are different from each other

Номер патента: US20020008555A1. Автор: Isao Naritake. Владелец: NEC Corp. Дата публикации: 2002-01-24.

Integrated circuits including first and second power supply nodes for writing and reading memory cells

Номер патента: US20240286401A1. Автор: James Michael Gardner,Scott A. Linn. Владелец: Hewlett Packard Development Co LP. Дата публикации: 2024-08-29.

Skew control circuit and interface circuit including the same

Номер патента: US20190005994A1. Автор: Jae-Heung Kim. Владелец: SK hynix Inc. Дата публикации: 2019-01-03.

Integrated circuits including high-voltage high-power and high-voltage low-power supply nodes

Номер патента: US20240286402A1. Автор: James Michael Gardner,Rogelio Cicili,Eric Thomas Martin. Владелец: Hewlett Packard Development Co LP. Дата публикации: 2024-08-29.

Memory circuit including write control unit wherein subthreshold leakage may be reduced

Номер патента: US5796650A. Автор: Thomas R. Wik,Shahryar Aryani. Владелец: LSI Logic Corp. Дата публикации: 1998-08-18.

Display driving circuit including crack detector and display device including the display driving circuit

Номер патента: US11735079B2. Автор: Siwoo Kim,Jinhong Hwang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-08-22.

Driving circuit including a first and second driving mode and method of operating the same

Номер патента: US11875738B2. Автор: Jihoon Kim,Yongsoo Lee,Kyunghoon Chung,Minje Hyun. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-01-16.

Memory bit cell circuit including a bit line coupled to a static random-access memory (SRAM) bit cell circuit and a non-volatile memory (NVM) bit cell circuit and a memory bit cell array circuit

Номер патента: US11749327B2. Автор: Khaja Ahmad SHAIK,Bharani Chava. Владелец: Qualcomm Inc. Дата публикации: 2023-09-05.

Display driving circuit including crack detector and display device including the display driving circuit

Номер патента: US20210272488A1. Автор: Siwoo Kim,Jinhong Hwang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-09-02.

Memory bit cell circuit including a bit line coupled to a static random-access memory (sram) bit cell circuit and a non-volatile memory (nvm) bit cell circuit and a memory bit cell array circuit

Номер патента: US20220180910A1. Автор: Khaja Ahmad SHAIK,Bharani Chava. Владелец: Qualcomm Inc. Дата публикации: 2022-06-09.

Memory bit cell circuit including a bit line coupled to a static random-access memory (sram) bit cell circuit and a non-volatile memory (nvm) bit cell circuit and a memory bit cell array circuit

Номер патента: WO2022125172A1. Автор: Khaja Ahmad SHAIK,Bharani Chava. Владелец: QUALCOMM INCORPORATED. Дата публикации: 2022-06-16.

Memory bit cell circuit including a bit line coupled to a static random-access memory (sram) bit cell circuit and a non-volatile memory (nvm) bit cell circuit and a memory bit cell array circuit

Номер патента: EP4260320A1. Автор: Khaja Ahmad SHAIK,Bharani Chava. Владелец: Qualcomm Inc. Дата публикации: 2023-10-18.

Low power voltage detector circuit including a flash memory cell

Номер патента: US5495453A. Автор: Mase J. Taub,Kenneth E. Wojciechowski. Владелец: Intel Corp. Дата публикации: 1996-02-27.

Water heater control circuit including an empty tank sensor

Номер патента: US5437002A. Автор: Steven B. BENNETT. Владелец: Paragon Electric Co Inc. Дата публикации: 1995-07-25.

Semiconductor chip, semiconductor integrated circuit including the semiconductor chip, semiconductor system including the semiconductor integrated circuit and method of driving the semiconductor system

Номер патента: US9177625B2. Автор: Jae-Bum Ko. Владелец: SK hynix Inc. Дата публикации: 2015-11-03.

Merged memory and logic (MML) integrated circuits including independent memory bank signals and methods

Номер патента: US6067255A. Автор: Seong-Ook Jung,Min-hwa Jang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2000-05-23.

Source driver and display driving circuit including the same

Номер патента: US20200105207A1. Автор: Hyun Ho Cho,Hae Won Lee,Jung Bae YUN,Ju Young SHIN. Владелец: Silicon Works Co Ltd. Дата публикации: 2020-04-02.

Methods for fabricating integrated circuits including generating photomasks for directed self-assembly

Номер патента: US20150012897A1. Автор: Yi Zou,Azat Latypov,Vito Dai. Владелец: Globalfoundries Inc. Дата публикации: 2015-01-08.

Integrated circuit including built-in self test circuit to test memory and memory test method

Номер патента: US7876633B2. Автор: Yoshitaka Aoki,Yasuyuki Hirasaki,Katsumi Shinbo. Владелец: Renesas Electronics Corp. Дата публикации: 2011-01-25.

Pixel driving circuit including control unit to measure voltage difference between opposite ends of sampling resistor, and display panel including the same

Номер патента: US11735096B2. Автор: Lei Gao. Владелец: Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd. Дата публикации: 2023-08-22.

Scanning drive circuit including n shift registers each having independent output terminals, driving method, display panel, and display apparatus

Номер патента: US11521539B2. Автор: Yue Li,Mengmeng ZHANG. Владелец: Shanghai Tianma AM OLED Co Ltd. Дата публикации: 2022-12-06.

GOA circuit including a reverse circuit and a potential holding circuit and display panel

Номер патента: US11322108B2. Автор: Jian Tao. Владелец: Wuhan China Star Optoelectronies Technology Co Ltd. Дата публикации: 2022-05-03.

Integrated circuit including Built-In Self Test circuit to test memory and memory test method

Номер патента: US20090238018A1. Автор: Yoshitaka Aoki,Yasuyuki Hirasaki,Katsumi Shinbo. Владелец: NEC Electronics Corp. Дата публикации: 2009-09-24.

Digital circuit including fail-safe circuit

Номер патента: US5065047A. Автор: Masahiro Ishikawa,Mitsuo Kaneko,Yuichi Igari. Владелец: Nissan Motor Co Ltd. Дата публикации: 1991-11-12.

Resolver circuit including BTL amplifier

Номер патента: US20050200367A1. Автор: Boris Khaykin,David Mulligan. Владелец: Visteon Global Technologies Inc. Дата публикации: 2005-09-15.

Setting circuit and integrated circuit including the same

Номер патента: US8427883B2. Автор: Chang-Hyun Lee,Dae-Suk Kim. Владелец: Hynix Semiconductor Inc. Дата публикации: 2013-04-23.

Data driving circuit including a first operator that generates a flag signal based on a load signal and a reset signal and a second operator that generates a horizontal scanning identical signal, display apparatus comprising the same and control method thereof

Номер патента: US8159439B2. Автор: Chang-Soo Lee,Jae-Han Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2012-04-17.

Sensing circuit for detecting characteristics of display panel and display driver integrated circuit including the same

Номер патента: US11810489B2. Автор: HaJun LEE,Jeongah Ahn,Youngsub JIN. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-11-07.

Memory array circuits including word line circuits for improved word line signal timing and related methods

Номер патента: WO2022250866A1. Автор: Chiaming Chai,Jason Philip Martzloff,Shaoping Ge. Владелец: Microsoft Technology Licensing, LLC. Дата публикации: 2022-12-01.

Integrated circuit including a memory element programmed using a seed pulse

Номер патента: US20090310401A1. Автор: Thomas Happ,Jan Boris Philipp,Bernhard Ruf,Christian Ruster. Владелец: Qimonda AG. Дата публикации: 2009-12-17.

Anti-fuse circuit and semiconductor integrated circuit including the same

Номер патента: US20120008448A1. Автор: Hong-Jung Kim,Jin-Hee Cho. Владелец: Hynix Semiconductor Inc. Дата публикации: 2012-01-12.

Repair circuit including repair controller

Номер патента: US20110029143A1. Автор: Duck Hwa Hong. Владелец: Hynix Semiconductor Inc. Дата публикации: 2011-02-03.

One-time programable cell circuit, semiconductor integrated circuit including the same, and data judging method thereof

Номер патента: US20110080764A1. Автор: Hiroyuki Furukawa,Isao Naritake. Владелец: Renesas Electronics Corp. Дата публикации: 2011-04-07.

One-time programable cell circuit, semiconductor integrated circuit including the same, and data judging method thereof

Номер патента: US20130176765A1. Автор: Hiroyuki Furukawa,Isao Naritake. Владелец: Renesas Electronics Corp. Дата публикации: 2013-07-11.

Memory array circuits including word line circuits for improved word line signal timing and related methods

Номер патента: US20220383918A1. Автор: Chiaming Chai,Jason Philip Martzloff,Shaoping Ge. Владелец: Microsoft Technology Licensing LLC. Дата публикации: 2022-12-01.

Memory array circuits including word line circuits for improved word line signal timing and related methods

Номер патента: EP4348647A1. Автор: Chiaming Chai,Jason Philip Martzloff,Shaoping Ge. Владелец: Microsoft Technology Licensing LLC. Дата публикации: 2024-04-10.

Shift register circuit including denoising control sub-circuit and method for driving same, and gate driving circuit and display apparatus

Номер патента: US12002407B2. Автор: Jie Zhang,Dawei Wang,Guangliang Shang,Shiming Shi,Jiangnan Lu,Libin LIU. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2024-06-04.

Integrated circuits including first and second power supply nodes for writing and reading memory cells

Номер патента: EP4366952A1. Автор: James Michael Gardner,Scott A. Linn. Владелец: Hewlett Packard Development Co LP. Дата публикации: 2024-05-15.

Data current generation circuit including a compensation control circuit, driving method, driver chip and display panel

Номер патента: US11521550B2. Автор: Ping-Lin Liu,Haodong ZHANG. Владелец: Seeya Optronics Co Ltd. Дата публикации: 2022-12-06.

Systems and methods for controlling devices in a superconducting circuit

Номер патента: US20240057485A1. Автор: Andrew J. Berkley,Fabio Altomare,Mauricio REIS FILHO,Ilya V. PERMINOV. Владелец: D Wave Systems Inc. Дата публикации: 2024-02-15.

Magnetic resonance imaging system including superconducting main magnet, superconducting gradient coil and cooled radio frequency coil

Номер патента: RU2586390C2. Автор: Эрчжэнь ГАО,Циюань МА. Владелец: Тайм Медикал Холдингз Компани Лимитед. Дата публикации: 2016-06-10.

SYSTEMS FOR PROBING SUPERCONDUCTING CIRCUITS INCLUDING THE USE OF A NON-MAGNETIC CRYOGENIC HEATER

Номер патента: US20210011082A1. Автор: Marizan Miriam E.,Kurek Edward M.. Владелец: . Дата публикации: 2021-01-14.

Manufacture of oxide superconducting circuit

Номер патента: JPS63304678A. Автор: Takao Shioda,塩田　孝夫. Владелец: Fujikura Ltd. Дата публикации: 1988-12-12.

Superconducting circuit

Номер патента: FR1214885A. Автор: . Владелец: International Business Machines Corp. Дата публикации: 1960-04-12.

Superconducting circuit devices and parametric amplifiers comprising such devices

Номер патента: CA966199A. Автор: Arthur L. Morse. Владелец: MACROQUAN DATA SYSTEMS. Дата публикации: 1975-04-15.

Method for double-sided patterning of high temperature superconducting circuits

Номер патента: WO2000005770A1. Автор: Philip Shek Wah Pang. Владелец: E.I du Pont de Nemours and Company. Дата публикации: 2000-02-03.

In-line resistor for superconducting circuit and method of manufacturing the same

Номер патента: JP3365945B2. Автор: ダブリュー チャン ヒューゴ,エイチ シルヴァー アーノルド. Владелец: ティアールダブリュー インコーポレイテッド. Дата публикации: 2003-01-14.

High temp. superconductive circuit line prodn.

Номер патента: DE4417427A1. Автор: Bernhard Dr Roas,Hinrich Aarjes,Manfred Kuehnl. Владелец: SIEMENS AG. Дата публикации: 1995-11-23.

Improvements to superconducting circuits

Номер патента: FR1309502A. Автор: . Владелец: SPACE TECHNOLOGY LAB. Дата публикации: 1962-11-16.

Superconductive circuit device

Номер патента: JPS6167974A. Автор: Ichiro Ishida,一郎 石田. Владелец: Agency of Industrial Science and Technology. Дата публикации: 1986-04-08.

Ground grid for superconducting circuits

Номер патента: EP3192176B1. Автор: Quentin P. Herr,Anna Y. Herr,Steven Brian SHAUCK,Eileen Jiwon MIN. Владелец: Northrop Grumman Systems Corp. Дата публикации: 2023-12-20.

Formation of ground plane for superconducting circuit

Номер патента: JPS6224677A. Автор: Kenichi Kuroda,Junichi Nakano,Mineo Ueki,純一 中野,研一 黒田,植木　峰雄. Владелец: Nippon Telegraph and Telephone Corp. Дата публикации: 1987-02-02.

Method of forming superconducting circuit

Номер патента: EP0285106A3. Автор: Kenichi C/O Osaka Works Takahashi,Noriyuki C/O Osaka Works Yoshida,Jun C/O Osaka Works Shioya,Yoichi C/O Osaka Works Yamaguchi,Akira C/O Osaka Works Mizoguchi,Noriki C/O Osaka Works Hayashi,Satoshi C/O Osaka Works Takano,Kenji C/O Osaka Works Miyazaki. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 1989-08-23.

Superconducting circuits

Номер патента: FR1280506A. Автор: . Владелец: International Business Machines Corp. Дата публикации: 1961-12-29.

Regulator device for power supply for superconducting circuit

Номер патента: JP2675090B2. Автор: 秀雄 鈴木. Владелец: Fujitsu Ltd. Дата публикации: 1997-11-12.

Latch circuit including a data retention latch

Номер патента: WO2006075122A3. Автор: David Walter Flynn,David William Howard. Владелец: Advanced Risc Mach Ltd. Дата публикации: 2007-04-05.

Latch circuit including a data retention latch

Номер патента: EP1836768A2. Автор: David Walter Flynn,David William Howard. Владелец: Advanced Risc Machines Ltd. Дата публикации: 2007-09-26.

Latch circuit including a data retention latch

Номер патента: MY136254A. Автор: David Walter Flynn,David William Howard. Владелец: Advanced Risc Mach Ltd. Дата публикации: 2008-09-30.

Latch circuit including a data retention latch

Номер патента: WO2006075122A2. Автор: David Walter Flynn,David William Howard. Владелец: ARM LIMITED. Дата публикации: 2006-07-20.

Operational transconductance amplifier circuit including active inductor

Номер патента: US20220209729A1. Автор: Youngdon CHOI,Junghwan Choi,Youngchul Cho,Seungjin PARK,Baekjin Lim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-06-30.

Latch circuit, transmission circuit including latch circuit, and semiconductor apparatus including transmission circuit

Номер патента: US11908543B2. Автор: Kwan Su SHON,Yo Han JEONG,Keun Seon AHN,Eun Ji CHOI. Владелец: SK hynix Inc. Дата публикации: 2024-02-20.

Buffer circuit including offset blocking circuit and display device including the same

Номер патента: US11955090B2. Автор: Sungho Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-04-09.

Voltage detector and communication circuit including voltage detector

Номер патента: US20190199459A1. Автор: Chung-Yu Lin. Владелец: Realtek Semiconductor Corp. Дата публикации: 2019-06-27.

Buffer circuit, receiver circuit including the buffer circuit, and semiconductor apparatus including the receiver circuit

Номер патента: US11799481B2. Автор: Yo Han JEONG,Jin Ha Hwang,Eun Ji CHOI. Владелец: SK hynix Inc. Дата публикации: 2023-10-24.

Metering Circuit Including a Floating Count Window to Determine a Count

Номер патента: US20150180479A1. Автор: Marty Pflum. Владелец: Silicon Laboratories Inc. Дата публикации: 2015-06-25.

Bias generation circuit, buffer circuit including the bias generation circuit and semiconductor system including the buffer circuit

Номер патента: US20210384894A1. Автор: Gi Moon HONG,Dae Han Kwon. Владелец: SK hynix Inc. Дата публикации: 2021-12-09.

Multi-bit flip-flop and integrated circuit including the same

Номер патента: US11988712B2. Автор: Ahreum Kim,Minsu Kim,Seungman Lim,Chunghee Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-05-21.

Tunable Biquad Filter Circuit Including Phase Shift Detection and Methods for Using Such

Номер патента: US20120075011A1. Автор: James A. Bailey,Robert K. Chen,Richard T. Kaul. Владелец: LSI Corp. Дата публикации: 2012-03-29.

CALIBRATION CIRCUIT INCLUDING COMMON NODE SHARED BY PULL-UP CALIBRATION PATH AND PULL-DOWN CALIBRATION PATH, AND SEMICONDUCTOR MEMORY DEVICE INCLUDING THE SAME

Номер патента: US20200058332A1. Автор: CHOI Hun-Dae. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2020-02-20.

SIGNAL AMPLIFIER, SIGNAL RECEIVING CIRCUIT INCLUDING THE SAME, AND DEVICE INCLUDING THE SAME

Номер патента: US20190068145A1. Автор: LEE Soo Min. Владелец: . Дата публикации: 2019-02-28.

BUFFER CIRCUIT, RECEIVER CIRCUIT INCLUDING THE BUFFER CIRCUIT, AND SEMICONDUCTOR APPARATUS INCLUDING THE RECEIVER CIRCUIT

Номер патента: US20220103176A1. Автор: HWANG Jin Ha,JEONG Yo Han,CHOI Eun Ji. Владелец: SK HYNIX INC.. Дата публикации: 2022-03-31.

SEQUENTIAL CIRCUIT, SCAN CHAIN CIRCUIT INCLUDING THE SAME AND INTEGRATED CIRCUIT INCLUDING THE SAME

Номер патента: US20180088176A1. Автор: Uemura Taiki. Владелец: . Дата публикации: 2018-03-29.

Formation of superconducting circuit

Номер патента: JPS6451685A. Автор: Takeshi Miyazaki,Satoru Takano,Noriyuki Yoshida,Kenki Hayashi. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 1989-02-27.

Production method for patterned organic film, production apparatus for patterned organic film, organic semiconductor device produced by same, and integrated circuit including organic semiconductor device

Номер патента: US20230165123A1. Автор: Mari Sasaki,Junichi Takeya,Shunichiro Watanabe,Tatsuyuki MAKITA. Владелец: University of Tokyo NUC. Дата публикации: 2023-05-25.

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Номер патента: US20200388745A1. Автор: DENG HAO. Владелец: . Дата публикации: 2020-12-10.

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Номер патента: WO2024079551A1. Автор: Karthik Balakrishnan,Oliver Dial,Jason Orcutt,Martin Sandberg,Abram Falk. Владелец: IBM Deutschland GmbH. Дата публикации: 2024-04-18.

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Номер патента: US20240127097A1. Автор: Karthik Balakrishnan,Abram L. Falk,Martin O. Sandberg,Oliver Dial,Jason S. Orcutt. Владелец: International Business Machines Corp. Дата публикации: 2024-04-18.

Qubit-selective tuning of two-level system in superconducting qubits via optical control

Номер патента: WO2024079552A1. Автор: Karthik Balakrishnan,Jason Orcutt,Martin Sandberg,Abram Falk. Владелец: IBM Deutschland GmbH. Дата публикации: 2024-04-18.

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Номер патента: US20230320046A1. Автор: Tetsuro Sato,Ayuka Tada. Владелец: NEC Corp. Дата публикации: 2023-10-05.

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Номер патента: US20220045259A1. Автор: ZHOU Jingwei,YU Wenlong,KU Hsiang-Sheng,ZHANG Xiaohang. Владелец: . Дата публикации: 2022-02-10.

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Номер патента: US20220102613A1. Автор: Lauer Isaac,Sleight Jeffrey,Balakrishnan Karthik,Frank David James. Владелец: . Дата публикации: 2022-03-31.

Superconducting circuit fabrication method

Номер патента: JP2713343B2. Автор: 貴浩 今井,敬三 原田,修示 矢津,哲司 上代. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 1998-02-16.

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Номер патента: US20160071903A1. Автор: Herr Quentin P.,Herr Anna Y.,SHAUCK STEVEN BRIAN,MIN Eileen Jiwon. Владелец: Northrop Grumman Systems Corporation. Дата публикации: 2016-03-10.

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Номер патента: US20160133819A1. Автор: Bodke Ashish,Greer Frank. Владелец: INTERMOLECULAR, INC.. Дата публикации: 2016-05-12.

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Номер патента: US20170186935A1. Автор: Greer Frank,Bonetti Joseph Anthony,Zhu Wenxian. Владелец: INTERMOLECULAR, INC.. Дата публикации: 2017-06-29.

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Номер патента: US20150236235A1. Автор: Ladizinsky Eric,Oh Byong Hyop,Yao Jason,Neufeld Richard David,Ladizinsky Nicolas. Владелец: . Дата публикации: 2015-08-20.

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Номер патента: US20160254434A1. Автор: Kumar Pradeep,McDermott III Robert Francis. Владелец: . Дата публикации: 2016-09-01.

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Номер патента: US20150313046A1. Автор: Andrew Steinbach,Dipankar Pramanik,Sergey Barabash. Владелец: Intermolecular Inc. Дата публикации: 2015-10-29.

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Номер патента: CA3162663A1. Автор: Nicolas Didier. Владелец: Didier Nicolas. Дата публикации: 2021-05-27.

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Номер патента: US20170033273A1. Автор: Chang Josephine B.,Ketchen Mark B.,Gibson Gerald W.. Владелец: . Дата публикации: 2017-02-02.

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Номер патента: US20170084813A1. Автор: Chang Josephine B.,Ketchen Mark B.,Gibson Gerald W.. Владелец: . Дата публикации: 2017-03-23.

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Номер патента: US20180174852A1. Автор: Chang Josephine B.,McClure,III Douglas T.. Владелец: . Дата публикации: 2018-06-21.

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Номер патента: US20210305315A1. Автор: Shao Dongbing,Brink Markus,Solgun Firat. Владелец: . Дата публикации: 2021-09-30.

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Номер патента: US20160343935A1. Автор: Chang Josephine B.,McClure,III Douglas T.. Владелец: . Дата публикации: 2016-11-24.

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Номер патента: US20200028064A1. Автор: Chang Josephine B.,Ketchen Mark B.,Gibson Gerald W.. Владелец: . Дата публикации: 2020-01-23.

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Номер патента: US20170062228A1. Автор: Chang Josephine B.,McClure,III Douglas T.. Владелец: . Дата публикации: 2017-03-02.

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Номер патента: US20180261752A1. Автор: PRZYBYSZ ANTHONY JOSEPH,FERGUSON DAVID GEORGE,STRAND JOEL D.. Владелец: Northrop Grumman Systems Corporation. Дата публикации: 2018-09-13.

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Номер патента: US20160343934A1. Автор: Chang Josephine B.,McClure,III Douglas T.. Владелец: . Дата публикации: 2016-11-24.

Integrated circuit including a plurality of components including a transformer

Номер патента: US10367539B2. Автор: Sebastien Robert,Guy Le Moal. Владелец: NXP BV. Дата публикации: 2019-07-30.

Semiconductor structure, an integrated circuit including a semiconductor structure and a method for manufacturing a semiconductor structure

Номер патента: EP2394299A1. Автор: Philippe Renaud. Владелец: FREESCALE SEMICONDUCTOR INC. Дата публикации: 2011-12-14.

Half-bridge circuit including integrated level shifter transistor

Номер патента: US12002804B2. Автор: Franz Hirler,Peter Irsigler,Armin Willmeroth. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2024-06-04.

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Номер патента: US20190074374A1. Автор: Gary Horst Loechelt. Владелец: Semiconductor Components Industries LLC. Дата публикации: 2019-03-07.

Transistor circuits including fringeless transistors and method of making the same

Номер патента: US20240258317A1. Автор: Hiroshi Nakatsuji,Koichi Matsuno,Dai Iwata,Kiyokazu Shishido. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-08-01.

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Номер патента: US20170025405A1. Автор: Chun-Li Liu,Woochul Jeon,Joe Fulton. Владелец: Semiconductor Components Industries LLC. Дата публикации: 2017-01-26.

Electronic circuits including a MOSFET and a dual-gate JFET

Номер патента: EP2892079A3. Автор: Alexandre Bracale,Denis A. Masliah. Владелец: Acco Semiconductor Inc. Дата публикации: 2015-10-14.

Heterolithic microwave integrated circuits including gallium-nitride devices on highly doped regions of intrinsic silicon

Номер патента: US20200020681A1. Автор: Wayne Mack Struble,Timothy E. Boles. Владелец: MACOM Technology Solutions Holdings Inc. Дата публикации: 2020-01-16.

Photodiode and light receiving device with built-in circuit including the photodiode

Номер патента: US20020038868A1. Автор: Hideo Wada,Naoki Fukunaga,Shigeki Hayashida,Kazuhiro Natsuaki,Isamu Ohkubo. Владелец: Individual. Дата публикации: 2002-04-04.

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Номер патента: US20240258206A1. Автор: Xi-Wei Lin,Victor Moroz. Владелец: Synopsys Inc. Дата публикации: 2024-08-01.

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Номер патента: US11735517B2. Автор: Wei-Cheng Lin,Jiann-Tyng Tzeng,Kam-Tou SIO. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-08-22.

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Номер патента: US12021046B2. Автор: Carmela Cupeta,Paolo Colpani,Samuele Sciarrillo,Ivan Venegoni,Francesco Maria Pipia,Simone BOSSI. Владелец: STMICROELECTRONICS SRL. Дата публикации: 2024-06-25.

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Номер патента: US20170025409A1. Автор: Hyun Min Song. Владелец: SK hynix Inc. Дата публикации: 2017-01-26.

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Номер патента: EP1084501A1. Автор: Göran AstraZeneca R&D Lund MARNFELDT. Владелец: AstraZeneca AB. Дата публикации: 2001-03-21.

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Номер патента: US20200075750A1. Автор: Robert Langer,Niamh Waldron,Bernardette Kunert. Владелец: Interuniversitair Microelektronica Centrum vzw IMEC. Дата публикации: 2020-03-05.

Voltage boosting circuit including capacitor with reduced parasitic capacitance

Номер патента: WO1999050862A1. Автор: Göran MARNFELDT. Владелец: AstraZeneca AB. Дата публикации: 1999-10-07.

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Номер патента: US20010043114A1. Автор: Göran MARNFELDT. Владелец: Astra AB. Дата публикации: 2001-11-22.

Diode-connected bipolar junction transistors and electronic circuits including the same

Номер патента: US9490251B2. Автор: Hyun Min Song. Владелец: SK hynix Inc. Дата публикации: 2016-11-08.

Diode-connected bipolar junction transistors and electronic circuits including the same

Номер патента: US20150228643A1. Автор: Hyun Min Song. Владелец: SK hynix Inc. Дата публикации: 2015-08-13.

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Номер патента: US20110316085A1. Автор: Huang Liu,Wei Lu,Luona Goh,Jeff Shu. Владелец: GLOBALFOUNDRIES SINGAPORE PTE LTD. Дата публикации: 2011-12-29.

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Номер патента: US20190109612A1. Автор: Sebastien Robert,Guy Le Moal. Владелец: NXP BV. Дата публикации: 2019-04-11.

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Номер патента: US7935992B2. Автор: Hoon Chang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2011-05-03.

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Номер патента: US20180226336A1. Автор: Jong-Hoon Jung,Tae-Joong Song,Ha-young Kim,Gi-young Yang,Jin-young Lim,In-gyum KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-08-09.

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Номер патента: US8842402B2. Автор: Natale Aiello,Tiziana Teresa Signorelli,Francesco Pulvirenti. Владелец: STMICROELECTRONICS SRL. Дата публикации: 2014-09-23.

Integrated circuit including active pattern having variable width and method of designing the same

Номер патента: US20230290784A1. Автор: Minjae Jeong,Jungho DO,Jisu YU,Hyeongyu You,Yunkyeong JANG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-09-14.

Package substrate and flip-chip package circuit including the same

Номер патента: US20160118327A1. Автор: Shih-Ping Hsu,Che-Wei Hsu. Владелец: Phoenix Pioneer Technology Co Ltd. Дата публикации: 2016-04-28.

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Номер патента: US20230307436A1. Автор: Minjae Jeong,Jungho DO,Sanghoon Baek,Jonghoon Jung,Taejoong Song,Jisu YU,Hyeongyu You. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-09-28.

Integrated circuit including wire structure and related method

Номер патента: US20150056799A1. Автор: Jeffrey P. Gambino,Edward C. Cooney, III,Zhong-Xiang He,Robert K. Leidy. Владелец: International Business Machines Corp. Дата публикации: 2015-02-26.

Integrated circuit including wire structure, related method and design structure

Номер патента: US20130320536A1. Автор: Jeffrey P. Gambino,Edward C. Cooney, III,Zhong-Xiang He,Robert K. Leidy. Владелец: International Business Machines Corp. Дата публикации: 2013-12-05.

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Номер патента: US20190287891A1. Автор: Jong-Hoon Jung,Tae-Joong Song,Ha-young Kim,Gi-young Yang,Jin-young Lim,In-gyum KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-09-19.

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Номер патента: US20200294905A1. Автор: Jong-Hoon Jung,Tae-Joong Song,Ha-young Kim,Gi-young Yang,Jin-young Lim,In-gyum KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-09-17.

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Номер патента: US10672702B2. Автор: Jong-Hoon Jung,Tae-Joong Song,Ha-young Kim,Gi-young Yang,Jin-young Lim,In-gyum KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-06-02.

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Номер патента: US20020163027A1. Автор: Thomas Skotnicki,Emmanuel Josse. Владелец: STMICROELECTRONICS SA. Дата публикации: 2002-11-07.

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Номер патента: US20230261039A1. Автор: Chia-Ping Lai,Chung-Chuan Tseng,Wen-Feng Kuo. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-08-17.

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Номер патента: US20220271119A1. Автор: Chia-Ping Lai,Chung-Chuan Tseng,Wen-Feng Kuo. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-08-25.

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Номер патента: US20200203161A1. Автор: Nicolas Posseme,Shay REBOH,Fabrice Nemouchi,Cyrille Le Royer,Loïc Gaben. Владелец: Commissariat a lEnergie Atomique et aux Energies Alternatives CEA. Дата публикации: 2020-06-25.

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Номер патента: US11764452B2. Автор: Henning Braunisch,Telesphor Kamgaing,Adel A. Elsherbini,Johanna M. Swan,Georgios Dogiamis. Владелец: Intel Corp. Дата публикации: 2023-09-19.

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Номер патента: US11817450B2. Автор: Wayne Mack Struble,Timothy E. Boles. Владелец: MACOM Technology Solutions Holdings Inc. Дата публикации: 2023-11-14.

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Номер патента: US9614507B2. Автор: James D. Warnock,Ayan Datta,Sumitha George,Charudhattan Nagarajan,Vijay K. Ankenapalli. Владелец: International Business Machines Corp. Дата публикации: 2017-04-04.

Integrated circuits including integrated passive devices and methods of manufacture thereof

Номер патента: US20140159198A1. Автор: Xiaowei Ren,Wayne R. Burger. Владелец: Individual. Дата публикации: 2014-06-12.

Semiconductor circuit including nanosheets and fins on the same wafer

Номер патента: US20190214409A1. Автор: Effendi Leobandung. Владелец: International Business Machines Corp. Дата публикации: 2019-07-11.

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Номер патента: US20230327028A1. Автор: Christian Rivero,Brice Arrazat,Julien Delalleau,Joel Metz. Владелец: STMICROELECTRONICS ROUSSET SAS. Дата публикации: 2023-10-12.

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Номер патента: US11984384B2. Автор: Xi-Wei Lin,Victor Moroz. Владелец: Synopsys Inc. Дата публикации: 2024-05-14.

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Номер патента: US11996439B2. Автор: Chia-Ping Lai,Chung-Chuan Tseng,Wen-Feng Kuo. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-05-28.

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Номер патента: US20170126218A1. Автор: James D. Warnock,Ayan Datta,Sumitha George,Charudhattan Nagarajan,Vijay K. Ankenapalli. Владелец: International Business Machines Corp. Дата публикации: 2017-05-04.

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Номер патента: US20170012615A1. Автор: James D. Warnock,Ayan Datta,Sumitha George,Charudhattan Nagarajan,Vijay K. Ankenapalli. Владелец: International Business Machines Corp. Дата публикации: 2017-01-12.

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Номер патента: US20130248945A1. Автор: Denis A. Masliah,Alexandre G. Bracale. Владелец: Acco Semiconductor Inc. Дата публикации: 2013-09-26.

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Номер патента: US20130161760A1. Автор: Becker Scott T.,Smayling Michael C.. Владелец: . Дата публикации: 2013-06-27.

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Номер патента: US20140097493A1. Автор: BAEK Sang-hoon,OH Sang-Kyu. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2014-04-10.

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Номер патента: US20180033722A1. Автор: KIM Jaehong,JUNG Yunhwan,KANG Sunyool. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2018-02-01.

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Номер патента: US20220059572A1. Автор: Kim Min-Su,LEE Dae-Seong,RYU Jong-kyu. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2022-02-24.

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Номер патента: US20200058583A1. Автор: KIM Jaehong,JUNG Yunhwan,KANG Sunyool. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2020-02-20.

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Номер патента: US20170062410A1. Автор: Loechelt Gary H.. Владелец: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC. Дата публикации: 2017-03-02.

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Номер патента: US20190074296A1. Автор: Kim Min-Su,LEE Dae-Seong,RYU Jong-kyu. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2019-03-07.

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Номер патента: US20170125416A1. Автор: BAEK Sang-hoon,OH Sang-Kyu. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2017-05-04.

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Номер патента: US20210183997A1. Автор: Hong Yu,Hui Zang,Jiehui SHU. Владелец: GlobalFoundries US Inc. Дата публикации: 2021-06-17.

Method for charging and/or discharging and/or reversing the charge of a superconducting-switch-free superconductively closed circuit via direct current feeding, superconducting-switch-free superconductively closed circuit for use with said method, superconducting magnet and method for producing said superconducting circuit

Номер патента: US20240203626A1. Автор: Matteo Alessandrini,Davide Nardelli. Владелец: Bruker Switzerland AG. Дата публикации: 2024-06-20.

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Номер патента: WO2022207413A1. Автор: Matteo Alessandrini,Davide Nardelli. Владелец: Bruker Switzerland AG. Дата публикации: 2022-10-06.

Superconducting circuit, production method of superconducting joints, superconducting magnet, and production method of superconducting magnet

Номер патента: EP2284916B1. Автор: Michiya Okada,Masaya Takahashi,Motomune Kodama. Владелец: HITACHI LTD. Дата публикации: 2013-03-27.

Superconducting circuit, production method of superconducting joints, superconducting magnet, and production method of superconducting magnet

Номер патента: EP2418703B1. Автор: Michiya Okada,Masaya Takahashi,Motomune Kodama. Владелец: HITACHI LTD. Дата публикации: 2015-07-15.

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Номер патента: EP4068311B1. Автор: Matteo Alessandrini,Davide Nardelli. Владелец: Bruker Switzerland AG. Дата публикации: 2024-02-28.

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Номер патента: US20200394101A1. Автор: Andrew J. Kerman. Владелец: Massachusetts Institute of Technology. Дата публикации: 2020-12-17.

Means for reducing eddy current losses in superconducting circuits

Номер патента: US3336548A. Автор: David L Atherton. Владелец: Ferranti Packard Ltd. Дата публикации: 1967-08-15.

Superconducting circuits with active termination

Номер патента: EP3289683B1. Автор: Quentin P. Herr,Aaron A. Pesetski,Pavel Borodulin. Владелец: Northrop Grumman Systems Corp. Дата публикации: 2020-10-28.

Superconducting circuits with active termination

Номер патента: EP3289683A1. Автор: Quentin P. Herr,Aaron A. Pesetski,Pavel Borodulin. Владелец: Northrop Grumman Systems Corp. Дата публикации: 2018-03-07.

Superconducting circuits with active termination

Номер патента: WO2016178822A1. Автор: Quentin P. Herr,Aaron A. Pesetski,Pavel Borodulin. Владелец: Northrop Grumman Systems Corporation. Дата публикации: 2016-11-10.

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Номер патента: US20170193388A1. Автор: Gambetta Jay,Filipp Stefan. Владелец: . Дата публикации: 2017-07-06.

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Номер патента: US20200259483A1. Автор: Quentin P. Herr,Haitao O. Dai,Jonathan D. Egan,James F. Wise. Владелец: Microsoft Technology Licensing LLC. Дата публикации: 2020-08-13.

Superconductive circuit

Номер патента: ES364847A1. Автор: . Владелец: Commissariat a lEnergie Atomique CEA. Дата публикации: 1971-01-01.

Superconductive circuits with efficient method

Номер патента: US20080085834A1. Автор: James Scott Hacsi. Владелец: James Scott Hacsi. Дата публикации: 2008-04-10.

High Power Superconductive Circuits and Method of Construction Thereof

Номер патента: CA2166014A1. Автор: Raafat R. Mansour. Владелец: Com Dev Limited. Дата публикации: 1996-06-29.

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Номер патента: US20150028970A1. Автор: Gambetta Jay M.,Steffen Matthias,CHOW JERRY M.,Corcoles Gonzalez Antonio D.. Владелец: INTERNATIONAL BUSINESS MACHINES CORPORATION. Дата публикации: 2015-01-29.

Process for introducing a current into a superconducting circuit and device for implementing this process.

Номер патента: FR95949E. Автор: Jean Sole. Владелец: Commissariat a lEnergie Atomique CEA. Дата публикации: 1972-03-10.

Current generating device in a superconducting circuit

Номер патента: FR1370941A. Автор: . Владелец: Philips Gloeilampenfabrieken NV. Дата публикации: 1964-08-28.

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Номер патента: US20150111754A1. Автор: Harris Richard G.,Amin Mohammad H.S.,Smirnov Anatoly. Владелец: . Дата публикации: 2015-04-23.

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Номер патента: US20200394101A1. Автор: Andrew J. Kerman. Владелец: Massachusetts Institute of Technology. Дата публикации: 2020-12-17.

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Номер патента: US9673775B2. Автор: Satoshi Asada. Владелец: Murata Manufacturing Co Ltd. Дата публикации: 2017-06-06.

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Номер патента: US20210407728A1. Автор: Atsushi Toujo. Владелец: Murata Manufacturing Co Ltd. Дата публикации: 2021-12-30.

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Номер патента: WO2015079280A1. Автор: Remi BARRELLON,Olivier NEGRI. Владелец: VOLVO TRUCK CORPORATION. Дата публикации: 2015-06-04.

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Номер патента: EP3074994A1. Автор: Remi BARRELLON,Olivier NEGRI. Владелец: Volvo Truck Corp. Дата публикации: 2016-10-05.

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Номер патента: US9934917B2. Автор: Remi BARRELLON,Olivier NEGRI. Владелец: Volvo Truck Corp. Дата публикации: 2018-04-03.

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Номер патента: US20220385174A1. Автор: Chang Yong Kwon,Dong Kyun Ryu,Yun Sic BANG. Владелец: Solum Co Ltd. Дата публикации: 2022-12-01.

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Номер патента: GB2483991A. Автор: Minfeng Xu,Xianrui Huang,Anbo Wu. Владелец: General Electric Co. Дата публикации: 2012-03-28.

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Номер патента: US11948658B2. Автор: Joon Hong Park. Владелец: SK hynix Inc. Дата публикации: 2024-04-02.

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Номер патента: US20230206967A1. Автор: Joon Hong Park. Владелец: SK hynix Inc. Дата публикации: 2023-06-29.

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Номер патента: US20240178866A1. Автор: Makoto Ogata. Владелец: Murata Manufacturing Co Ltd. Дата публикации: 2024-05-30.

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Номер патента: US20190109612A1. Автор: Robert Sebastien,LE MOAL Guy. Владелец: . Дата публикации: 2019-04-11.

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Номер патента: US12055167B2. Автор: Reiner Knoell,Oliver GERHARD,Royce Gerngross,Jim E. Diehl. Владелец: Bosch Rexroth Corp. Дата публикации: 2024-08-06.

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Номер патента: US10035680B2. Автор: Marvin Dehmlow,Jochen Thomas Richter,Hebert Horbrügger,Richard F. Magda. Владелец: Otis Elevator Co. Дата публикации: 2018-07-31.

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Номер патента: EP4334798A1. Автор: James Michael Gardner,Rogelio Cicili,Eric Thomas Martin. Владелец: Hewlett Packard Development Co LP. Дата публикации: 2024-03-13.

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Номер патента: US20240116293A1. Автор: Michael W. Cumbie,James Michael Gardner,Scott A. Linn. Владелец: Hewlett Packard Development Co LP. Дата публикации: 2024-04-11.

Superconducting circuits

Номер патента: FR1241731A. Автор: . Владелец: International Business Machines Corp. Дата публикации: 1960-09-23.

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Номер патента: FR1246225A. Автор: . Владелец: International Business Machines Corp. Дата публикации: 1960-11-18.

Superconducting circuits and methods of manufacturing the latter

Номер патента: FR1229415A. Автор: . Владелец: International Business Machines Corp. Дата публикации: 1960-09-07.

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Номер патента: US20190377845A1. Автор: Solgun Firat. Владелец: . Дата публикации: 2019-12-12.

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Номер патента: US20210397327A1. Автор: Changju Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-12-23.

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Номер патента: US20230050409A1. Автор: Changju Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-02-16.

Method and apparatus for forming an integrated circuit including a memory structure

Номер патента: US5541850A. Автор: Nels B. Vander Zanden,Mossaddeq Mahmood. Владелец: VLSI Technology Inc. Дата публикации: 1996-07-30.

Electronic chip and integrated circuit including a split routing unit having first-level routers for intra-layer transmissions and second-level routers for inter-layer transmissions and transmissions to the processing units

Номер патента: US8667251B2. Автор: Didier Lattard,Walid LAFI. Владелец: Commissariat a lEnergie Atomique et aux Energies Alternatives CEA. Дата публикации: 2014-03-04.

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Номер патента: US20170194047A1. Автор: Sung Hyun Park,Yong Ho Kim,Tae Joong Song,Woojin Rim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-07-06.

Integrated circuit including different types of cells, and method and system of designing the same

Номер патента: US20200151298A1. Автор: Jae-hoon Kim,Woo-Tae Kim,Hyung-Ock Kim,Yong-Durk KIM,Joon-Young Shin. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-05-14.

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Номер патента: US20230229391A1. Автор: Sang Hoon Oh. Владелец: SK hynix Inc. Дата публикации: 2023-07-20.

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Номер патента: US10319436B2. Автор: Hidetoshi Matsumura. Владелец: Fujitsu Ltd. Дата публикации: 2019-06-11.

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Номер патента: US20070226461A1. Автор: Frédéric Demange,Sylvain Garnier,Mickael Le Dily. Владелец: Atmel Nantes SA. Дата публикации: 2007-09-27.

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Номер патента: US20070192569A1. Автор: Sylvain Garnier,Patrice Menard,Bruno Faidherbe. Владелец: Atmel Nantes SA. Дата публикации: 2007-08-16.

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Номер патента: US20130318403A1. Автор: KIM Dong-Keun,Kim Si-Young. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2013-11-28.

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Номер патента: WO2023225478A3. Автор: Leila Parsa,Timothy J. Haugan,Keith Corzine,Saeid SAEIDABADI,Christopher KOVACS. Владелец: The Regents of the University of California. Дата публикации: 2023-12-28.

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Номер патента: WO2023225478A2. Автор: Leila Parsa,Timothy J. Haugan,Keith Corzine,Saeid SAEIDABADI,Christopher KOVACS. Владелец: The Regents of the University of California. Дата публикации: 2023-11-23.

Superconductive circuit

Номер патента: US3202833A. Автор: Norman H Meyers,Charles J Bertuch,Sobol Harold. Владелец: International Business Machines Corp. Дата публикации: 1965-08-24.

Superconducting circuit having an output conversion circuit

Номер патента: EP0441299A2. Автор: Hideo Suzuki. Владелец: Fujitsu Ltd. Дата публикации: 1991-08-14.

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Номер патента: US20150263736A1. Автор: Herr Quentin P.,Herr Anna Y.,NAAMAN OFER. Владелец: Northrop Grumman Systems Corporation. Дата публикации: 2015-09-17.

Zero clearing method and system for superconducting circuit

Номер патента: CN111147045B. Автор: 张志敏,唐光明,张阔中,轩伟,瞿佩瑶,杨佳洪. Владелец: Institute of Computing Technology of CAS. Дата публикации: 2021-11-05.

Josephson superconductive circuit

Номер патента: JPS5843625A. Автор: 雄治 波多野,Yuji Hatano,豊 原田,Yutaka Harada,Junshi Asano,浅野　純志. Владелец: HITACHI LTD. Дата публикации: 1983-03-14.

Manufacture of superconductor and superconductive circuit

Номер патента: JPH01157579A. Автор: Masahiko Izumi,正彦 和泉. Владелец: Showa Device Plant Co. Дата публикации: 1989-06-20.

Superconducting circuit having a rectifier for converting a bipolar signal to a unipolar signal

Номер патента: EP0505250A3. Автор: Kohtaroh Gotoh. Владелец: Fujitsu Ltd. Дата публикации: 1993-03-17.

Superconducting circuits and methods for latching data

Номер патента: WO2020117576A1. Автор: Alexander L. Braun. Владелец: Microsoft Technology Licensing, LLC. Дата публикации: 2020-06-11.

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Номер патента: US20200186132A1. Автор: BRAUN ALEXANDER L.. Владелец: . Дата публикации: 2020-06-11.

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Номер патента: US20180294815A1. Автор: HAMILTON Michael C.,Goteti Uday S.. Владелец: . Дата публикации: 2018-10-11.

Superconducting circuit

Номер патента: JPS5866419A. Автор: Junshi Asano,浅野　純志. Владелец: HITACHI LTD. Дата публикации: 1983-04-20.

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Номер патента: US20140314419A1. Автор: Paik Hanhee. Владелец: RAYTHEON BBN TECHNOLOGIES CORP.. Дата публикации: 2014-10-23.

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Номер патента: US20150280720A1. Автор: Da In IM,Jong Ho Jung. Владелец: SK hynix Inc. Дата публикации: 2015-10-01.

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Номер патента: US20110175656A1. Автор: YUE YU,Han Bi. Владелец: Integrated Device Technology Inc. Дата публикации: 2011-07-21.

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Номер патента: US20240259047A1. Автор: Sung Wan Kim,Sung Hun Chun,Pyeong Han Lee,Kwang Beom PARK,Chang Ho RYU. Владелец: 3A LOGICS Inc. Дата публикации: 2024-08-01.

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Номер патента: US20210194486A1. Автор: Ahreum Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-06-24.

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Номер патента: US11916562B2. Автор: Seunghyun Oh,Wan Kim,Jiseon PAEK,Youngsea CHO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-02-27.

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Номер патента: US20210099173A1. Автор: Ahreum Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-04-01.

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Номер патента: US20240275385A1. Автор: Santosh Sharma,Mei Yu Soh. Владелец: GlobalFoundries US Inc. Дата публикации: 2024-08-15.

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Номер патента: US20190288722A1. Автор: Vinod Panikkath,Bhushan Shanti Asuri,Krishnaswamy Thiagarajan,Ashok Swaminathan,Ibrahim Chamas,Dongwon Seo,Shahin Mehdizad Taleie,Sy-Chyuan Hwu,Zhilong Tang,Behnam Sedighi,Sameer Vasantlal Vora,Nitz Saputra,Ayush Mittal,Ping Wing Lai,Yen-Wei Chang,Tonmoy Biswas. Владелец: Qualcomm Inc. Дата публикации: 2019-09-19.

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Номер патента: US20130307595A1. Автор: Kang-Youl Lee,Ja-Beom Koo,Don-Hyun Choi. Владелец: SK hynix Inc. Дата публикации: 2013-11-21.

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Номер патента: WO2003023952A1. Автор: Vijay Nair,Jonathan Lewis,Nada El-Zein,Mandar Deshpande. Владелец: Motorola, Inc., A Corporation Of The State Of Delaware. Дата публикации: 2003-03-20.

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Номер патента: US11509298B2. Автор: Yong Lim,Jaehoon Lee,Seunghyun Oh,Wan Kim,Barosaim Sung. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-11-22.

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Номер патента: US20240235562A1. Автор: Chel Ho Chung,Gil Sung ROH. Владелец: MagnaChip Semiconductor Ltd. Дата публикации: 2024-07-11.

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Номер патента: US20070177516A1. Автор: Takashi Nakajima,Kazumaro Takaiwa,Kazuaki Kobayashi,Masahiro Agata,Yuichi Kotaki,Yoshihisa Funami. Владелец: Fujitsu Ltd. Дата публикации: 2007-08-02.

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Номер патента: US20160105189A1. Автор: Masazumi Maeda,Yoshiharu Yoshizawa. Владелец: Fujitsu Ltd. Дата публикации: 2016-04-14.

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Номер патента: US20160191065A1. Автор: Da In IM,Jong Ho Jung. Владелец: SK hynix Inc. Дата публикации: 2016-06-30.

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Номер патента: US9839083B2. Автор: Antony P. Van de Ven,Matthew C. Reynolds. Владелец: Cree Inc. Дата публикации: 2017-12-05.

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Номер патента: GB2602142A. Автор: Light Roger,KNIGHT Luke,SUMMERLAND David. Владелец: Search For the Next Ltd. Дата публикации: 2022-06-22.

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Номер патента: US20240088876A1. Автор: Ivan FLORIANI,Elena Brigo. Владелец: STMICROELECTRONICS SRL. Дата публикации: 2024-03-14.

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Номер патента: US20240048113A1. Автор: Makoto Ogata. Владелец: Murata Manufacturing Co Ltd. Дата публикации: 2024-02-08.

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Номер патента: US20130259485A1. Автор: Yi Wang. Владелец: Applied Optoelectronics Inc. Дата публикации: 2013-10-03.

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Номер патента: WO2023220861A1. Автор: Ren Qiang Yan,Bi Hua LI. Владелец: TechTronic CordLess GP. Дата публикации: 2023-11-23.

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Номер патента: US20240171135A1. Автор: Jungmin Park,Daehee PARK,Janghoon Han. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-05-23.

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Номер патента: US20220368337A1. Автор: Seunghyun Oh,Wan Kim,Jiseon PAEK,Youngsea CHO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-11-17.

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Номер патента: US20240171186A1. Автор: Seunghyun Oh,Wan Kim,Jiseon PAEK,Youngsea CHO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-05-23.

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Номер патента: EP4089923A1. Автор: Seunghyun Oh,Wan Kim,Jiseon PAEK,Youngsea CHO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-11-16.

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Номер патента: US20170222555A1. Автор: Loechelt Gary H.. Владелец: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC. Дата публикации: 2017-08-03.

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Номер патента: US4520282A. Автор: Kazuo Watanabe,Fumihiko Yokogawa,Akira Haeno,Yuichi Ohkubo. Владелец: Pioneer Electronic Corp. Дата публикации: 1985-05-28.

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Номер патента: KR100364333B1. Автор: 로날두스마리아아아르츠. Владелец: 코닌클리케 필립스 일렉트로닉스 엔.브이.. Дата публикации: 2003-02-07.

Digitally tuned circuit including switching of bank capacitors between plural tuned circuits

Номер патента: US4138654A. Автор: Gabriel J. Luhowy. Владелец: HARRIS CORP. Дата публикации: 1979-02-06.

Frequency selective circuit including a twin-t notch filter

Номер патента: US3745376A. Автор: A Mcintosh. Владелец: TEL TONE CORP. Дата публикации: 1973-07-10.

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Methods and systems for writing state into superconducting circuits with integrated semiconductor-based circuits

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Номер патента: US20170089961A1. Автор: Abdo Baleegh. Владелец: . Дата публикации: 2017-03-30.

Superconducting circuit for high-speed lookup table

Номер патента: US7443719B2. Автор: Deepnarayan Gupta,Alex F. Kirichenko,Timur V. Filippov. Владелец: Hypres Inc. Дата публикации: 2008-10-28.

Superconducting circuits

Номер патента: FR1288066A. Автор: . Владелец: International Business Machines Corp. Дата публикации: 1962-03-24.

Superconducting circuits

Номер патента: FR1340202A. Автор: . Владелец: International Business Machines Corp. Дата публикации: 1963-10-18.

Improvements to superconducting circuits

Номер патента: FR1420310A. Автор: . Владелец: Compagnie Francaise Thomson Houston SA. Дата публикации: 1965-12-03.

Integrated circuit including constant-0 flip flops reconfigured to provide observable and controllable test points

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System and Circuit Including Multiple Photo Detectors

Номер патента: US20110248151A1. Автор: Wayne T. Holcombe,Miroslav Svajda. Владелец: Silicon Laboratories Inc. Дата публикации: 2011-10-13.

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A kind of electric power system of based superconductive circuit

Номер патента: CN207504574U. Автор: 谢伟,林,李红雷,林一. Владелец: East China Power Test and Research Institute Co Ltd. Дата публикации: 2018-06-15.

Power supply for superconducting circuit

Номер патента: JP2543943B2. Автор: 誠剛 小谷. Владелец: Fujitsu Ltd. Дата публикации: 1996-10-16.

Superconducting circuit manufacturing method

Номер патента: JP2890431B2. Автор: 信治 長町. Владелец: Shimazu Seisakusho KK. Дата публикации: 1999-05-17.

Integrated circuits including customization bits

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Integrated circuits including customization bits

Номер патента: US20210229426A1. Автор: Michael W. Cumbie,James Michael Gardner,Scott A. Linn. Владелец: Hewlett Packard Development Co LP. Дата публикации: 2021-07-29.

Integrated circuits including customization bits

Номер патента: AU2019428714A1. Автор: Michael W. Cumbie,James Michael Gardner,Scott A. Linn. Владелец: Hewlett Packard Development Co LP. Дата публикации: 2021-09-30.

Electrical stimulus treatment method with circuit including allergen

Номер патента: WO2016044893A1. Автор: Garry Hilton BRIGHT. Владелец: Noosa Natural Vet Pty Ltd. Дата публикации: 2016-03-31.

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Номер патента: US20120015749A1. Автор: James T. Gooden,Ronald V. Cornacchia. Владелец: FORD GLOBAL TECHNOLOGIES LLC. Дата публикации: 2012-01-19.

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Номер патента: WO2024026473A1. Автор: Hyunki Kim. Владелец: Ademco Inc.. Дата публикации: 2024-02-01.

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Номер патента: EP1812706A1. Автор: Paul D. Perry,Andre Veinotte. Владелец: Siemens Canada Ltd. Дата публикации: 2007-08-01.

Superconductive circuit breaker

Номер патента: RU2541380C2. Автор: Александр Иванович Мащенко. Владелец: Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Национальный исследовательский Томский политехнический университет". Дата публикации: 2015-02-10.

Superconducting qubit coupling structure and superconducting quantum chip

Номер патента: AU2023270338A1. Автор: Li Feiyu,WANG YUXUAN,JIN Lijing. Владелец: Beijing Baidu Netcom Science And Technology Co Ltd. Дата публикации: 2023-12-14.

High potential discharge control circuit including a resistive material coated electrode for induction-charging electrostatic spraying system

Номер патента: CA1125358A. Автор: James E. Sickles,John W. Du. Владелец: PPG Industries Inc. Дата публикации: 1982-06-08.

Multistable superconductive circuit

Номер патента: CA617697A. Автор: A. Henle Robert,C. Logue Joseph. Владелец: International Business Machines Corp. Дата публикации: 1961-04-04.

Superconductive circuit

Номер патента: AU4964864A. Автор: Norman Porter Sigmund. Владелец: National Cash Register Co. Дата публикации: 1966-03-24.

Mass variation in superconducting circuits

Номер патента: GB9926672D0. Автор: . Владелец: Individual. Дата публикации: 2000-01-12.

Superconducting circuit components

Номер патента: CA789738A. Автор: H. Silver Arnold,C. Jaklevic Robert,J. Lambe John,E. Mercereau James. Владелец: Ford Motor Company of Canada Ltd. Дата публикации: 1968-07-09.

SUPERCONDUCTIVE CIRCUIT BREAKER

Номер патента: RU2013128871A. Автор: Александр Иванович Мащенко. Владелец: Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Национальный исследовательский Томский политехнический университет". Дата публикации: 2014-12-27.

Superconducting quantum interference device and superconducting circuit

Номер патента: JP4130065B2. Автор: 塚本　　晃,和夫 齊藤,一正 ▲高▼木,徳海 深沢,良信 樽谷,悦久 五月女. Владелец: International Superconductivity Technology Center. Дата публикации: 2008-08-06.

Oxide superconducting circuit and connection thereof

Номер патента: JPS6424451A. Автор: Takao Shioda. Владелец: Fujikura Ltd. Дата публикации: 1989-01-26.

Manufacture of superconducting circuit substrate

Номер патента: JPH01120889A. Автор: Kan Ikemiya,完 池宮. Владелец: Daikin Industries Ltd. Дата публикации: 1989-05-12.

Superconducting circuit

Номер патента: JPS62217680A. Автор: Norio Fujimaki,藤巻　則夫. Владелец: Fujitsu Ltd. Дата публикации: 1987-09-25.

Chip carrier for superconducting circuit chip and measuring apparatus using the same

Номер патента: JP4081834B2. Автор: 哲也 平野,竜起 永石,秀夫 糸▲崎▼,晴久 豊田. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2008-04-30.

Superconduction circuit

Номер патента: JPS6212212A. Автор: Masaaki Aoki,Ushio Kawabe,Juichi Nishino,正明 青木,川辺　潮,西野　壽一. Владелец: HITACHI LTD. Дата публикации: 1987-01-21.

Superconductive circuit

Номер патента: CA828385A. Автор: Sole Jean. Владелец: Commissariat a lEnergie Atomique CEA. Дата публикации: 1969-11-25.

Method of making thin film high temperature superconducting circuits

Номер патента: RU2333572C1. Автор: Владимир Николаевич Игумнов,Виталий Евгеньевич Филимонов,Александр Павлович Большаков,Николай Михайлович Скулкин. Владелец: Государственное образовательное учреждение высшего профессионального образования Марийский государственный технический университет. Дата публикации: 2008-09-10.

Josephson element, superconducting circuit, quantum computation device, and method for manufacturing josephson element

Номер патента: WO2023139779A1. Автор: 剛 高橋. Владелец: 富士通株式会社. Дата публикации: 2023-07-27.

Multistable superconductive circuit

Номер патента: CA615050A. Автор: W. Crowe James,Housman Bennett. Владелец: International Business Machines Corp. Дата публикации: 1961-02-21.

Manufacture of superconducting circuit device

Номер патента: JPS6060786A. Автор: Ichiro Ishida,一郎 石田. Владелец: Nippon Electric Co Ltd. Дата публикации: 1985-04-08.

SUPERCONDUCTIVE CIRCUIT BREAKER

Номер патента: RU2011144347A. Автор: Александр Иванович Мащенко. Владелец: Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Национальный исследовательский Томский политехнический университет". Дата публикации: 2013-05-10.

Oxide superconducting circuit

Номер патента: JP2790079B2. Автор: 信之 杉井,晴弘 長谷川,徳海 深沢,良信 樽谷,宇紀 樺沢,一正 高木. Владелец: HITACHI LTD. Дата публикации: 1998-08-27.

Method of suspending superconducting circuit in magnetic field of coil

Номер патента: SU1839890A1. Автор: Владимир Викторович Степанов,Василий Васильевич Козорез,Анатолий Петрович Буравлев,Лев Александрович Левин,Моисей Иосифович Малтинский,Олег Георгиевич Чеборин,Ирина Валентиновна Кобржицкая. Владелец: ЦНИИ "Электроприбор". Дата публикации: 2006-06-20.

Superconducting circuit device

Номер патента: JPS62183575A. Автор: Ichiro Ishida,一郎 石田. Владелец: Agency of Industrial Science and Technology. Дата публикации: 1987-08-11.

Superconduction circuit

Номер патента: JPS63149914A. Автор: Norio Fujimaki,藤巻　則夫. Владелец: Fujitsu Ltd. Дата публикации: 1988-06-22.

Superconductive circuit breaker

Номер патента: RU2482567C1. Автор: Александр Иванович Мащенко. Владелец: Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Национальный исследовательский Томский политехнический университет". Дата публикации: 2013-05-20.

Connecting method for oxide superconducting circuit

Номер патента: JPS6422040A. Автор: Masahiro Sato,Koichi Takahashi,Hiromi Hidaka,Takao Shioda,Takeru Fukuda. Владелец: Fujikura Ltd. Дата публикации: 1989-01-25.

Superconducting circuit structure and fabrication method

Номер патента: JP2981855B2. Автор: 昌宏 青柳,博 仲川. Владелец: KOGYO GIJUTSU INCHO. Дата публикации: 1999-11-22.

Superconductive circuit breaker

Номер патента: RU2487439C1. Автор: Александр Иванович Мащенко. Владелец: Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Национальный исследовательский Томский политехнический университет". Дата публикации: 2013-07-10.

Superconducting circuit

Номер патента: JP2838979B2. Автор: 秀一 永沢. Владелец: Nippon Electric Co Ltd. Дата публикации: 1998-12-16.

Superconductive circuits

Номер патента: CA688723A. Автор: A. Connell Richard,P. Seraphim Donald. Владелец: International Business Machines Corp. Дата публикации: 1964-06-16.

Superconducting circuit

Номер патента: JP2931787B2. Автор: 龍典 橋本,二朗 吉田. Владелец: Toshiba Corp. Дата публикации: 1999-08-09.

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Номер патента: US20140063348A1. Автор: Verlinden René. Владелец: NXP B.V.. Дата публикации: 2014-03-06.

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