Method for depositing metal and metal oxide films and patterned films
Номер патента: EP1292718A2
Опубликовано: 19-03-2003
Автор(ы): Ross H. Hill, You Mao Shi
Принадлежит: EKC Technology Inc
Опубликовано: 19-03-2003
Автор(ы): Ross H. Hill, You Mao Shi
Принадлежит: EKC Technology Inc
Реферат: The invention is directed to a photoresist-free method for depositing films composed of metals, such as copper, or its oxides from metal complexes. More specifically, the method involves applying an amorphous film of a metal complex to a substrate. The metal complexes have the formula MfLgXh, wherein M is selected from the group consisting of Ti, V, Cr, Au, Mn, Fe, Co, Ni, Cu, Zn, Si, Sn, Li, Na, K, Ba, Sr, Mo, Ru, Pd, Pt, Re, Ir, and Os, L is a ligand of the formula (R2NCR2'CO) wherein R and R' are independently selected from H, CnHm and CnHmAxBy wherein A and B are independently selected from main group elements and f, g, h, n, m, x and y represent integers and wherein X is an anion independently selected from N3, NCO, NO3, NO2, Cl, Br, I, CN, OH, H and CH3. These films, upon, for example, thermal, photochemical or electron beam irradiation may be converted to the metal or its oxides. By using either directed light or electron beams, this may lead to a patterned metal or metal oxide film in a single step.
Method for depositing metal and metal oxide films and patterned films
Номер патента: WO2001083844A3. Автор: Ross H. Hill,You Mao Shi. Владелец: EKC Technology, Inc.. Дата публикации: 2003-01-16.