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一种半导体器件及其制造方法和电子装置

Номер патента: CN104658909A
Опубликовано: 27-05-2015
Автор(ы): 于书坤, 韦庆松
Принадлежит: Semiconductor Manufacturing International Shanghai Corp
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Номер патента: US9793173B2. Автор: Deyuan Xiao. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2017-10-17.

Semiconductor device and its manufacturing method

Номер патента: US20230402445A1. Автор: Yoshiaki Toyoda. Владелец: Fuji Electric Co Ltd. Дата публикации: 2023-12-14.

Bipolar semiconductor device with sub-cathode enhancement regions

Номер патента: US09871128B2. Автор: Yi Tang,Florin Udrea,Chiu Ng,Alice Pei-Shan Hsieh,Gianluca Camuso,Rajeev Krishna Vytla,Canhua Li. Владелец: Infineon Technologies North America Corp. Дата публикации: 2018-01-16.

SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, DISPLAY DEVICE, AND ELECTRONIC DEVICE

Номер патента: US20210035816A1. Автор: Koezuka Junichi,HAMOCHI Takashi,HOSAKA Yasuharu,JINTYOU Masami. Владелец: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.. Дата публикации: 2021-02-04.

SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, DISPLAY DEVICE, AND ELECTRONIC DEVICE

Номер патента: US20190189466A1. Автор: Koezuka Junichi,HAMOCHI Takashi,HOSAKA Yasuharu,JINTYOU Masami. Владелец: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.. Дата публикации: 2019-06-20.

SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, DISPLAY DEVICE, AND ELECTRONIC DEVICE

Номер патента: US20200185233A1. Автор: Koezuka Junichi,HAMOCHI Takashi,HOSAKA Yasuharu,JINTYOU Masami. Владелец: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.. Дата публикации: 2020-06-11.

Semiconductor device, manufacturing method thereof, display device, and electronic device

Номер патента: US20170243759A1. Автор: Junichi Koezuka,Masami Jintyou,Takashi HAMOCHI,Yasuharu Hosaka. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2017-08-24.

A triac device with high commutating capability

Номер патента: EP4386857A1. Автор: Lei He,Jifeng Zhou,Glenda Zhang. Владелец: Littelfuse Semiconductor (Wuxi) Co Ltd. Дата публикации: 2024-06-19.

Bipolar Semiconductor Device with Sub-Cathode Enhancement Regions

Номер патента: US20170271487A1. Автор: Yi Tang,Florin Udrea,Chiu Ng,Alice Pei-Shan Hsieh,Gianluca Camuso,Rajeev Krishna Vytla,Canhua Li. Владелец: Infineon Technologies North America Corp. Дата публикации: 2017-09-21.

Semiconductor device with modified mobility and thin film transistor having the same

Номер патента: US20050139923A1. Автор: Jang-yeon Kwon,Do-Young Kim,Takashi Noguchi,Young-soo Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2005-06-30.

Silicon carbide semiconductor device and its manufacturing method

Номер патента: EP1693896B1. Автор: K. c/o The Kansai Elec. Power Co. Inc. NAKAYAMA,Y. c/o The Kansai Elec. Power Co. Inc. SUGAWARA,K. c/o The Kansai Elec. Power Co. Inc. ASANO,H. c/o Central Research Institute TSUCHIDA,I. c/o Central Research Institute KAMATA,T. c/o Central Research Institute MIYANAGI,T. c/o Central Research Institute NAKAMURA. Владелец: Kansai Electric Power Co Inc. Дата публикации: 2013-10-02.

Semiconductor device and manufacture thereof

Номер патента: US20180204911A1. Автор: Weili Zhao,Yiqi Wang,XiaoFang Yang,Jianxiang Cai,JingGuo Jia. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2018-07-19.

Semiconductor device with non-linear surface

Номер патента: US10269575B2. Автор: Xiaomeng Chen,Shih-Chang Liu,Zhiqiang Wu,Chien-Hong Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2019-04-23.

Semiconductor device with non-linear surface

Номер патента: US20160196983A1. Автор: Xiaomeng Chen,Shih-Chang Liu,Zhiqiang Wu,Chien-Hong Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-07-07.

Semiconductor device and manufacturing method thereof

Номер патента: US20240322024A1. Автор: Tsung-Han Tsai,Chun-Sheng Liang,Ta-Chun Lin,Pin Chun Shen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-26.

Power semiconductor device and manufacturing method thereof

Номер патента: US20240243176A1. Автор: Han Seok KO,Dae Il Kim,Ji Houn Jung,Ung Bi Son. Владелец: DB HiTek Co Ltd. Дата публикации: 2024-07-18.

Semiconductor Device and Fabricating Method Thereof

Номер патента: US20220246750A1. Автор: Po-Yu YANG,Hsun-Wen Wang. Владелец: United Microelectronics Corp. Дата публикации: 2022-08-04.

Power semiconductor device and manufacturing method thereof

Номер патента: US20240120386A1. Автор: Han Seok KO,Dae Il Kim,Ji Houn Jung,Ung Bi Son. Владелец: DB HiTek Co Ltd. Дата публикации: 2024-04-11.

Semiconductor device and manufacturing method thereof

Номер патента: US20200294881A1. Автор: Ying-Ru Shih,Hsien-Chin Chiu. Владелец: GlobalWafers Co Ltd. Дата публикации: 2020-09-17.

Compound semiconductor device and method of manufacturing compound semiconductor device

Номер патента: US20230036228A1. Автор: Yoshikazu Motoyama,Akito Iwao. Владелец: Sony Semiconductor Solutions Corp. Дата публикации: 2023-02-02.

SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD, AND LIQUID CRYSTAL DISPLAY DEVICE AND ELECTRONIC DEVICE

Номер патента: JPWO2009123127A1. Автор: 茂 森,浩 田邉,田邉　浩,功 東海林,めぐみ 柴田. Владелец: NEC LCD Technologies Ltd. Дата публикации: 2011-07-28.

Semiconductor device with spacer of gradually changed thickness and manufacturing method thereof, and electronic device including the semiconductor device

Номер патента: US11728408B2. Автор: Huilong Zhu. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2023-08-15.

Semiconductor device and manufacturing method thereof, and electronic device including the semiconductor device

Номер патента: US12046672B2. Автор: Huilong Zhu. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2024-07-23.

Semiconductor device and manufacturing method thereof and electronic apparatus including the same

Номер патента: US20230282743A1. Автор: Huilong Zhu. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2023-09-07.

Semiconductor device and manufacturing method thereof and electronic apparatus including the same

Номер патента: US12068413B2. Автор: Huilong Zhu. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2024-08-20.

Semiconductor device and manufacturing method thereof and electronic apparatus including the same

Номер патента: US20210351297A1. Автор: Huilong Zhu. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2021-11-11.

Lateral double-diffused metal oxide semiconductor device and manufacturing method thereof, and electronic apparatus

Номер патента: US20220302305A1. Автор: Nailong He. Владелец: CSMC Technologies Fab2 Co Ltd. Дата публикации: 2022-09-22.

Semiconductor device with tunable epitaxy structures and method of forming the same

Номер патента: US12112989B2. Автор: Chih-Hsiang Huang,Shih-Hao Lin,Hsin-Wen Su,Tzu-Hsiang HSU,Szu-Chi Yang,Chong-De LIEN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-08.

Semiconductor device with multi-layer dielectric and methods of forming the same

Номер патента: US12057398B2. Автор: Chih-Hao Wang,Chia-Hao Chang,Jia-Chuan You,Yu-Ming Lin,Tien-Lu Lin,Lin-Yu HUANG,Sheng-Tsung Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-06.

Gate-All-Around Device with Protective Dielectric Layer and Method of Forming the Same

Номер патента: US20240250142A1. Автор: Hou-Yu Chen,Kuan-Lun Cheng,Cheng-Ting Chung,Yi-Bo Liao. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-25.

Nitride semiconductor device and manufacturing method thereof

Номер патента: US20220393005A1. Автор: Wen-Jung Liao,Chih Tung Yeh. Владелец: United Microelectronics Corp. Дата публикации: 2022-12-08.

Semiconductor device and manufacturing method thereof

Номер патента: US9620649B1. Автор: Shao-Hui Wu,Chi-Fa Ku,Chen-Bin Lin,Zhi-Biao Zhou,hai-biao Yao. Владелец: United Microelectronics Corp. Дата публикации: 2017-04-11.

Semiconductor device and manufacturing method thereof

Номер патента: US09620649B1. Автор: Shao-Hui Wu,Chi-Fa Ku,Chen-Bin Lin,Zhi-Biao Zhou,hai-biao Yao. Владелец: United Microelectronics Corp. Дата публикации: 2017-04-11.

Semiconductor device and manufacturing method thereof

Номер патента: US20240204101A1. Автор: Gang Wu,Shiwei HE,Hsien-Shih Chu,Junkun CHEN,Guoguo Kong,Mingru Ge. Владелец: Fujian Jinhua Integrated Circuit Co Ltd. Дата публикации: 2024-06-20.

Semiconductor device with multi-layer dielectric

Номер патента: US12040273B2. Автор: Chih-Hao Wang,Chia-Hao Chang,Jia-Chuan You,Yu-Ming Lin,Tien-Lu Lin,Lin-Yu HUANG,Sheng-Tsung Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-16.

Semiconductor device and manufacturing method thereof

Номер патента: US09508620B2. Автор: Shunpei Yamazaki,Junya Maruyama,Toru Takayama,Yumiko Ohno. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2016-11-29.

Semiconductor device and manufacturing method thereof

Номер патента: US20230207691A1. Автор: Guangtao Han. Владелец: Joulwatt Technology Co Ltd. Дата публикации: 2023-06-29.

Semiconductor device with funnel shape spacer and methods of forming the same

Номер патента: US12051628B2. Автор: Yen-Ming Chen,Yen-Ting Chen,Wei-Yang Lee,Fu-Kai Yang,Cheng-Yu Yang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-30.

Semiconductor device and manufacturing method thereof

Номер патента: US11901447B2. Автор: Guangtao Han. Владелец: Joulwatt Technology Co Ltd. Дата публикации: 2024-02-13.

Semiconductor device manufacturing method with reduced gate electrode height loss and related devices

Номер патента: US10535750B2. Автор: Yang Liu,Yongmeng Lee,Shaofeng Yu,Jianhua Ju,Zhaoxu Shen. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2020-01-14.

Semiconductor device with funnel shape spacer and methods of forming the same

Номер патента: US20240363426A1. Автор: Yen-Ming Chen,Yen-Ting Chen,Wei-Yang Lee,Fu-Kai Yang,Cheng-Yu Yang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-31.

Semiconductor device and manufacturing method thereof

Номер патента: US09680033B2. Автор: Shoji Kitamura. Владелец: Fuji Electric Co Ltd. Дата публикации: 2017-06-13.

Semiconductor device and manufacturing method thereof

Номер патента: US7504698B2. Автор: Tetsuya Taguwa. Владелец: Elpida Memory Inc. Дата публикации: 2009-03-17.

Semiconductor device active region profile and method of forming the same

Номер патента: US20240339541A1. Автор: Wei-Yang Lee,Chia-Pin Lin,Feng-Ching Chu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-10.

Semiconductor device with spacer of gradually changed thickness and manufacturing method thereof, and electronic device including the semiconductor device

Номер патента: US20230063993A1. Автор: Huilong Zhu. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2023-03-02.

Semiconductor device with spacer of gradually changed thickness and manufacturing method thereof, and electronic device including the semiconductor device

Номер патента: US11830929B2. Автор: Huilong Zhu. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2023-11-28.

Semiconductor device with spacer of gradually changed thickness and manufacturing method thereof, and electronic device including the semiconductor device

Номер патента: US20230066077A1. Автор: Huilong Zhu. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2023-03-02.

Semiconductor device and method for manufacturing the same

Номер патента: US20190043977A1. Автор: Yi Pei,Chenggong YIN. Владелец: Dynax Semiconductor Inc. Дата публикации: 2019-02-07.

Semiconductor Device Active Region Profile and Method of Forming the Same

Номер патента: US20230117516A1. Автор: Wei-Yang Lee,Chia-Pin Lin,Feng-Ching Chu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-04-20.

Semiconductor device and manufacturing method thereof

Номер патента: US20240250133A1. Автор: Hai-Ching Chen,Chung-Te Lin,Yu-Ming Lin,Kai-Wen Cheng,Chi-Min Chen,Yin-Hao Wu,Wu-Wei Tsai. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-25.

Semiconductor device and manufacturing method thereof

Номер патента: US09922865B2. Автор: Hyun Tae Jung,Jeong Gyu PARK,Woo Sig Min,Meng An Jung,Gil Ho LEE,Hyung Suk Choi,Da Soon Lee,Pil Seung Kang. Владелец: MagnaChip Semiconductor Ltd. Дата публикации: 2018-03-20.

Semiconductor device and manufacturing method thereof

Номер патента: US09466678B2. Автор: Che-Wei Chang,Shih-Hsien Huang,Chih-Chieh Yeh,Tzu-I Tsai. Владелец: United Microelectronics Corp. Дата публикации: 2016-10-11.

Split gate memory device, semiconductor device and forming method thereof

Номер патента: US09536889B2. Автор: Lingyue Zhang. Владелец: Shanghai Huahong Grace Semiconductor Manufacturing Corp. Дата публикации: 2017-01-03.

Semiconductor device and manufacturing method therefor

Номер патента: EP4228007A1. Автор: Tao Liu,Wei Lu,Haijun Li,Juncai Ma,Zhili Zhang,Cen TANG,Jin Rao,Lingcong LE. Владелец: Huawei Technologies Co Ltd. Дата публикации: 2023-08-16.

Semiconductor device and manufacturing method thereof, and electronic device including the semiconductor device

Номер патента: US20210175344A1. Автор: Huilong Zhu. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2021-06-10.

Semiconductor device and method of manufacturing the same

Номер патента: US20240355936A1. Автор: Boon Keat Toh,Chi REN,Chih-Hsin Chang,Szu Han Wu. Владелец: United Microelectronics Corp. Дата публикации: 2024-10-24.

Semiconductor Device and Manufacturing Method thereof

Номер патента: US20130082362A1. Автор: Huaxiang Yin,Qiuxia Xu,Dapeng Chen. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2013-04-04.

Semiconductor device with contact structures

Номер патента: US20200020584A1. Автор: Yi-Hsun CHIU,Yi-Hsiung Lin,Shang-Wen Chang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-01-16.

Semiconductor device and method of manufacturing semiconductor device

Номер патента: GB2589484A. Автор: Nakamura Keisuke,YAGYU Eiji,YOSHITSUGU Koji. Владелец: Mitsubishi Electric Corp. Дата публикации: 2021-06-02.

Semiconductor devices having fin field effect transistor (FinFET) structures and manufacturing and design methods thereof

Номер патента: US09818745B2. Автор: Tung Ying Lee,Chih-Hao Chang,Shou-Zen Chang,Wen-Huei Guo. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-11-14.

Manufacturing method of semiconductor device comprising oxide semiconductor film

Номер патента: US09905435B2. Автор: Junichi Koezuka,Yukinori Shima,Daisuke Kurosaki,Takuya Handa. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2018-02-27.

Semiconductor device having LDD-type source/drain regions and fabrication method thereof

Номер патента: US20020163037A1. Автор: Do-Hyung Kim,Jin-Ho Kim,Byung-Jun Hwang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2002-11-07.

Semiconductor device and manufacturing method therefor

Номер патента: US20180097082A1. Автор: Ming Zhou. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2018-04-05.

Semiconductor device with multichannel heterostructure and manufacturing method thereof

Номер патента: US11942525B2. Автор: HAO LI,Jian Wang,King Yuen Wong,Anbang ZHANG,Haoning ZHENG. Владелец: Innoscience Zhuhai Technology Co Ltd. Дата публикации: 2024-03-26.

Semiconductor device, manufacture thereof, and a radiation measurement method

Номер патента: US20200185503A1. Автор: Fei Zhou. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2020-06-11.

A semiconductor device, manufacture thereof, and a radiation measurement method

Номер патента: US20180331192A1. Автор: Fei Zhou. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2018-11-15.

Semiconductor device, manufacture thereof, and a radiation measurement method

Номер патента: US10566431B2. Автор: Fei Zhou. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2020-02-18.

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Номер патента: US20210183874A1. Автор: Yao-Ting Tsai,Hsin-Huang Shen,Yu-Shu Cheng. Владелец: Winbond Electronics Corp. Дата публикации: 2021-06-17.

Semiconductor device for compensating internal delay, methods thereof, and data processing system having the same

Номер патента: US09917172B2. Автор: Kwan Jae SONG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-03-13.

Semiconductor device for compensating internal delay, methods thereof, and data processing system having the same

Номер патента: US09508819B2. Автор: Kwan Jae SONG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-11-29.

Transistors comprising two-dimensional materials and related memory cells and electronic devices

Номер патента: US12015089B2. Автор: Gurtej S. Sandhu,Witold Kula,John A. Smythe. Владелец: Micron Technology Inc. Дата публикации: 2024-06-18.

Semiconductor device with S/D bottom isolation and methods of forming the same

Номер патента: US11854896B2. Автор: Ying-Keung Leung,Xusheng Wu,Huiling Shang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-12-26.

Semiconductor device with s/d bottom isolation and methods of forming the same

Номер патента: US20240105517A1. Автор: Ying-Keung Leung,Xusheng Wu,Huiling Shang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-03-28.

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Номер патента: US20180151696A1. Автор: Yang Liu,Yongmeng Lee,Shaofeng Yu,Jianhua Ju,Zhaoxu Shen. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2018-05-31.

Semiconductor device with corner isolation protection and methods of forming the same

Номер патента: US20230387199A1. Автор: Shih-Hao Lin,Xusheng Wu,Chang-Miao Liu,Bwo-Ning Chen,Pin-Ju Liang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-30.

Semiconductor device with corner isolation protection and methods of forming the same

Номер патента: US11916105B2. Автор: Shih-Hao Lin,Xusheng Wu,Chang-Miao Liu,Bwo-Ning Chen,Pin-Ju Liang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-02-27.

Semiconductor devices and methods of manufacturing thereof

Номер патента: US12087814B2. Автор: Yung-Chow Peng,Chia-Chung Chen,Wen-Shen Chou,Ya Yun Liu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-10.

Semiconductor devices and methods of manufacturing thereof

Номер патента: US20240371931A1. Автор: Yung-Chow Peng,Chia-Chung Chen,Wen-Shen Chou,Ya Yun Liu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-11-07.

Semiconductor device structure and method for forming the same

Номер патента: US09601593B2. Автор: Shih-Chi Lin,Chia-Ming Tsai,Ke-Chih Liu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-03-21.

Semiconductor device with l-shape conductive feature and methods of forming the same

Номер патента: EP3944295A1. Автор: Chih-Hao Wang,Cheng-Chi Chuang,Yu-Ming Lin,Li-Zhen YU,Yi-Hsun CHIU. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-01-26.

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Номер патента: US20200168555A1. Автор: Chih-Hao Wang,Chia-Hao Chang,Jia-Chuan You,Yu-Ming Lin,Tien-Lu Lin,Lin-Yu HUANG,Sheng-Tsung Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-05-28.

Semiconductor device and manufacturing method thereof

Номер патента: US20220376053A1. Автор: King Yuen Wong,Kye Jin Lee. Владелец: Innoscience Zhuhai Technology Co Ltd. Дата публикации: 2022-11-24.

Gate-all-around device with protective dielectric layer and method of forming the same

Номер патента: US11948989B2. Автор: Hou-Yu Chen,Kuan-Lun Cheng,Cheng-Ting Chung,Yi-Bo Liao. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-04-02.

Semiconductor device and manufacturing method thereof

Номер патента: US11588025B2. Автор: Jia Ren,Fulong Qiao,Pengkai Xu. Владелец: Shanghai Huali Microelectronics Corp. Дата публикации: 2023-02-21.

Semiconductor device and manufacturing method thereof

Номер патента: US20220045179A1. Автор: Jia Ren,Fulong Qiao,Pengkai Xu. Владелец: Shanghai Huali Microelectronics Corp. Дата публикации: 2022-02-10.

Semiconductor device and manufacturing method thereof

Номер патента: US20090227079A1. Автор: Toshihiko Iinuma. Владелец: Toshiba Corp. Дата публикации: 2009-09-10.

Semiconductor device and manufacturing method thereof

Номер патента: US10204986B1. Автор: Kuan-Hung Chen,Chun-Tsen Lu,Rung-Yuan Lee. Владелец: United Microelectronics Corp. Дата публикации: 2019-02-12.

Semiconductor Device with Reduced Contact Resistance and Methods of Forming the Same

Номер патента: US20230377965A1. Автор: Kuo-Chiang Tsai,Jhy-Huei Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-23.

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Номер патента: US20230103393A1. Автор: Zilan Li. Владелец: Guangdong Zhineng Technology Co Ltd. Дата публикации: 2023-04-06.

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Номер патента: US20210082756A1. Автор: Kuo-Chiang Tsai,Jhy-Huei Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-03-18.

Nanosheet semiconductor device comprising a multilayer source/drain region

Номер патента: EP4383341A3. Автор: Dong Suk Shin,Jung Taek Kim,Nam Kyu Cho,Seok Hoon Kim,Hyun-Kwan Yu,Pan Kwi Park,Seo Jin Jeong. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-24.

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Номер патента: US12132047B2. Автор: Kui Zhang. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-10-29.

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Номер патента: US10573752B2. Автор: YONG Li. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2020-02-25.

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Номер патента: US20170125599A1. Автор: Shao-Hui Wu,Chi-Fa Ku,Chen-Bin Lin,Zhi-Biao Zhou,hai-biao Yao. Владелец: United Microelectronics Corp. Дата публикации: 2017-05-04.

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Номер патента: US20230290859A1. Автор: Chih-Hao Wang,Kuo-Cheng Chiang,Yi-Ruei JHAN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-09-14.

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Номер патента: US09893150B2. Автор: Chih-Kang Chao,Ling-Sung Wang,Chih-Mu Huang,Ru-Shang Hsiao,Chen-Chieh Chiang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-02-13.

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Номер патента: US09780213B2. Автор: Chien-Chih Lin,Guan-Jie Shen,Chien-Hung Yeh,Chia-Der Chang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-10-03.

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Номер патента: US20190206853A1. Автор: Xin Gui ZHANG,Yao QI DONG. Владелец: SMIC Advanced Technology R&D Shanghai Corp. Дата публикации: 2019-07-04.

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Номер патента: US20230133883A1. Автор: Zilan Li. Владелец: Guangdong Zhineng Technologies Co Ltd. Дата публикации: 2023-05-04.

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Номер патента: EP4138144A1. Автор: Zilan Li. Владелец: Guangdong Zhineng Technology Co Ltd. Дата публикации: 2023-02-22.

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Номер патента: EP3958329A1. Автор: Zilan Li. Владелец: Guangdong Zhineng Technology Co Ltd. Дата публикации: 2022-02-23.

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Номер патента: US12027626B2. Автор: Wei-Yang Lee,Chia-Pin Lin,Feng-Ching Chu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-02.

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Номер патента: US20180040641A1. Автор: Shunpei Yamazaki,Katsuaki TOCHIBAYASHI,Kenichi SHIOHAMA. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2018-02-08.

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Номер патента: US20180308954A1. Автор: Chia-Wei Huang,Tan-Ya Yin. Владелец: United Microelectronics Corp. Дата публикации: 2018-10-25.

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Номер патента: US8610175B2. Автор: ZHONGSHAN Hong,Huojin Tu. Владелец: Semiconductor Manufacturing International Beijing Corp. Дата публикации: 2013-12-17.

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Номер патента: US20230411220A1. Автор: Yen-Ming Chen,Hui-Chi CHEN,Chia-Wei Chen,Feng-Cheng Yang,Kuo-Feng Yu,Jian-Hao Chen,Shih-Hao Lin,Shan-Mei Liao,Chih-Yu Hsu,Cheng Hong Yang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-12-21.

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Номер патента: US20210143270A1. Автор: Kai Jen,Hao-Chuan Chang. Владелец: Winbond Electronics Corp. Дата публикации: 2021-05-13.

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Номер патента: US09761483B1. Автор: Horng-Huei Tseng,Che-Cheng Chang,Chih-Han Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-09-12.

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Номер патента: US09966446B2. Автор: Keun Ho Lee,Yong Hee Park,Young Seok SONG,Ui Hui Kwon,Jae Hee Choi,Young Chul Hwang,Jee Soo Chang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-05-08.

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Номер патента: US09892961B1. Автор: Kangguo Cheng,Son V. Nguyen,Chanro Park,Tenko Yamashita,Juntao Li,Sanjay C. Mehta,Eric G. Liniger,Thomas J. Haigh. Владелец: International Business Machines Corp. Дата публикации: 2018-02-13.

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Номер патента: US20230411204A1. Автор: Chi-Cherng Jeng,Chih-Nan Wu,Wei Pang Chen. Владелец: Nexchip Semiconductor Corp. Дата публикации: 2023-12-21.

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Номер патента: US11869949B2. Автор: Georgios Vellianitis. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-01-09.

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Номер патента: US10134849B2. Автор: Ming Zhou. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2018-11-20.

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Номер патента: US20180097068A1. Автор: Ming Zhou. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2018-04-05.

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Номер патента: US20240088245A1. Автор: Georgios Vellianitis. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-03-14.

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Номер патента: EP4383346A1. Автор: Hui Sun,Zhibin Chen,Yong Hou,Biao Gao. Владелец: Huawei Digital Power Technologies Co Ltd. Дата публикации: 2024-06-12.

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Номер патента: US20130078791A1. Автор: Robert J. Miller,Ruilong Xie. Владелец: Globalfoundries Inc. Дата публикации: 2013-03-28.

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Номер патента: CN1677613A. Автор: 野泽陵一,石田幸政. Владелец: Seiko Epson Corp. Дата публикации: 2005-10-05.

Semiconductor device and producing method thereof, electrooptical device and electronic equipment

Номер патента: CN1280922C. Автор: 竹中敏. Владелец: Seiko Epson Corp. Дата публикации: 2006-10-18.

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Номер патента: US20180061995A1. Автор: Hajime Kimura,Yoshinori IEDA. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2018-03-01.

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Номер патента: US20200373435A1. Автор: Hajime Kimura,Yoshinori IEDA. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2020-11-26.

Semiconductor device and manufacturing method thereof

Номер патента: US8723254B2. Автор: Toshiaki Hikichi. Владелец: Mitsubishi Electric Corp. Дата публикации: 2014-05-13.

Compound device with back-side field plate

Номер патента: WO2020010253A1. Автор: James G. Fiorenza,Puneet Srivastava,Daniel Piedra. Владелец: ANALOG DEVICES, INC.. Дата публикации: 2020-01-09.

Stacked fets including devices with thick gate oxide

Номер патента: US20230307452A1. Автор: Oleg Gluschenkov,Ruilong Xie,Heng Wu,Junli Wang,Min Gyu Sung,Julien Frougier,Ruqiang Bao,Nicolas Jean Loubet. Владелец: International Business Machines Corp. Дата публикации: 2023-09-28.

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Номер патента: US6818489B2. Автор: Do-Hyung Kim,Jin-Ho Kim,Byung-Jun Hwang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2004-11-16.

Semiconductor device including magnet

Номер патента: US8237164B2. Автор: Masakazu Murakami,Shunpei Yamazaki,Junya Maruyama,Toru Takayama,Toshiji Hamatani,Hideaki Kuwabara,Yumiko Ohno. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2012-08-07.

Semiconductor device with reduced gate length

Номер патента: US20150097227A1. Автор: Jean-Pierre Colinge,Kuo-Cheng Ching,Carlos H. Diaz,Ta-Pan Guo. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2015-04-09.

Semiconductor device and manufacturing method therefor

Номер патента: US20140077279A1. Автор: Ajin TU. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2014-03-20.

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Номер патента: EP4254508A1. Автор: Bo Shi,Dan ZENG,Daokun CHEN,Yiren LIN. Владелец: Gree Electric Appliances Inc of Zhuhai. Дата публикации: 2023-10-04.

Insulation gate type semiconductor device and its manufacturing method

Номер патента: TW200707745A. Автор: Tetsuya Okada,Makoto Oikawa,Kazunari Kushiyama. Владелец: Sanyo Electric Co. Дата публикации: 2007-02-16.

Semiconductor device and its manufacture method

Номер патента: TW200514259A. Автор: Shigeyuki Sugihara. Владелец: Sanyo Electric Co. Дата публикации: 2005-04-16.

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Номер патента: TW465077B. Автор: Tomohiro Saito,Toshihiko Iinuma,Junji Yagishita. Владелец: Toshiba Corp. Дата публикации: 2001-11-21.

Semiconductor device and its manufacture method

Номер патента: TWI260783B. Автор: Shigeyuki Sugihara. Владелец: Sanyo Electric Co. Дата публикации: 2006-08-21.

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Номер патента: TW540103B. Автор: Mitsuo Nissa. Владелец: NEC Electronics Corp. Дата публикации: 2003-07-01.

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Номер патента: US20200381559A1. Автор: Chih-Hao Wang,Sai-Hooi Yeong,Chih-Yu Chang,Bo-Feng YOUNG,Chi-On CHUI. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-12-03.

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Номер патента: US20200235233A1. Автор: YONG Li. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2020-07-23.

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Номер патента: US20190035925A1. Автор: YONG Li. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2019-01-31.

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Номер патента: US11164973B2. Автор: YONG Li. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2021-11-02.

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Номер патента: US20230163192A1. Автор: Bo Shi,Dan ZENG,Daokun CHEN,Yiren LIN. Владелец: Gree Electric Appliances Inc of Zhuhai. Дата публикации: 2023-05-25.

Method for manufacturing semiconductor device having thinned fins

Номер патента: US10546946B2. Автор: Masaaki Shinohara. Владелец: Renesas Electronics Corp. Дата публикации: 2020-01-28.

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Номер патента: US20200381555A1. Автор: SANGHOON Lee,Kyoungmin CHOI,Myunggil Kang,Krishna Bhuwalka. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-12-03.

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Номер патента: US20190067114A1. Автор: JIQUAN Liu. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2019-02-28.

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Номер патента: US10861968B1. Автор: Chih-Hao Wang,Sai-Hooi Yeong,Chih-Yu Chang,Bo-Feng YOUNG,Chi-On CHUI. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-12-08.

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Номер патента: EP3392912A3. Автор: Takashi Hashimoto,Shinichiro Abe,Hideaki YAMAKOSHI,Yuto OMIZU. Владелец: Renesas Electronics Corp. Дата публикации: 2018-10-31.

A stacked semiconductor device

Номер патента: WO2023151950A1. Автор: Kangguo Cheng,Shogo Mochizuki,Juntao Li. Владелец: Ibm United Kingdom Limited. Дата публикации: 2023-08-17.

Method for forming a semiconductor device comprising a selectively grown graphene layer

Номер патента: US10121872B2. Автор: Ming Zhou. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2018-11-06.

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Номер патента: EP3301722A1. Автор: Ming Zhou. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2018-04-04.

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Номер патента: US20200258997A1. Автор: Sanjay Natarajan,Yi-Chiau Huang,Patricia M. Liu,Xuebin Li,Saurabh Chopra,Gaurav Thareja,Abhishek Dube,Andy Lo. Владелец: Applied Materials Inc. Дата публикации: 2020-08-13.

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Номер патента: US20200105920A1. Автор: YONG Li. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2020-04-02.

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Номер патента: US20230037526A1. Автор: Yung-Chow Peng,Chia-Chung Chen,Wen-Shen Chou,Ya Yun Liu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-02-09.

Semiconductor device structure with conductive via structure and method for forming the same

Номер патента: US11810919B2. Автор: PENG Wang,Jyun-De Wu,Huan-Just Lin,Yi-Chen Wang,Yi-Chun Chang,Te-Chih Hsiung,Yuan-Tien Tu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-07.

Non-planar I/O and logic semiconductor devices having different workfunction on common substrate

Номер патента: US11823954B2. Автор: Walid M. Hafez,Chia-Hong Jan,Roman W. OLAC-VAW,Pei-Chi Liu. Владелец: Intel Corp. Дата публикации: 2023-11-21.

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Номер патента: US20240038592A1. Автор: Walid M. Hafez,Chia-Hong Jan,Roman W. OLAC-VAW,Pei-Chi Liu. Владелец: Intel Corp. Дата публикации: 2024-02-01.

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Номер патента: EP4394890A1. Автор: Tao Liu,Ming Lu,Haijun Li,Zhili Zhang,Jin Rao,Shuiming LI. Владелец: Huawei Technologies Co Ltd. Дата публикации: 2024-07-03.

Semiconductor device including support structure, method for manufacturing the same and electronic system including the same

Номер патента: US20220336489A1. Автор: Dongseong Kim,Kangmin KIM,Junhyoung Kim,Byungkwan You,Kiyoon KANG,Seugmin LEE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-10-20.

Integrated circuit, manufacturing method thereof, power amplifier, and electronic device

Номер патента: US20240297245A1. Автор: Bin Hu,Min Zhu,Huantao DUAN,Ruxue NI. Владелец: Huawei Technologies Co Ltd. Дата публикации: 2024-09-05.

Semiconductor Device and a Manufacturing Method Thereof

Номер патента: US20160155747A1. Автор: Tatsuyoshi MIHARA. Владелец: Renesas Electronics Corp. Дата публикации: 2016-06-02.

Semiconductor device and a manufacturing method thereof

Номер патента: US09905429B2. Автор: Masaaki Shinohara,Tatsuyoshi MIHARA. Владелец: Renesas Electronics Corp. Дата публикации: 2018-02-27.

Semiconductor device and a manufacturing method thereof

Номер патента: US09633859B2. Автор: Masaaki Shinohara,Tatsuyoshi MIHARA. Владелец: Renesas Electronics Corp. Дата публикации: 2017-04-25.

Semiconductor device structure and manufacturing method thereof

Номер патента: US20240014213A1. Автор: Zheng Lv,Xunyi SONG,Chihsen Huang. Владелец: Hangzhou Silergy Semiconductor Technology LTD. Дата публикации: 2024-01-11.

Semiconductor device structure and manufacturing method thereof

Номер патента: US20240371630A1. Автор: Wei-Ting YEH,I-Hsuan LO. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-11-07.

Semiconductor device and a manufacturing method thereof

Номер патента: US09954120B2. Автор: Atsushi Amo. Владелец: Renesas Electronics Corp. Дата публикации: 2018-04-24.

Semiconductor device and the manufacturing method thereof

Номер патента: US20240213319A1. Автор: Yun-Hung Shen. Владелец: Hon Hai Precision Industry Co Ltd. Дата публикации: 2024-06-27.

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Номер патента: US20190051647A1. Автор: Franz Hirler,Joachim Weyers,Maximilian Treiber. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2019-02-14.

Semiconductor device and associated manufacturing method

Номер патента: US20220231147A1. Автор: Nicolas Posseme,Fabrice Nemouchi,Louis HUTIN,Cyrille Le Royer. Владелец: Commissariat a lEnergie Atomique et aux Energies Alternatives CEA. Дата публикации: 2022-07-21.

Semiconductor device and a manufacturing method thereof

Номер патента: US9831318B2. Автор: Hirofumi TOKITA,Tamotsu Ogata. Владелец: Renesas Electronics Corp. Дата публикации: 2017-11-28.

Semiconductor device and a manufacturing method thereof

Номер патента: US20160268445A1. Автор: Atsushi Amo. Владелец: Renesas Electronics Corp. Дата публикации: 2016-09-15.

Semiconductor device and a manufacturing method thereof

Номер патента: US20170323983A1. Автор: Atsushi Amo. Владелец: Renesas Electronics Corp. Дата публикации: 2017-11-09.

Semiconductor device and a manufacturing method thereof

Номер патента: US9755086B2. Автор: Atsushi Amo. Владелец: Renesas Electronics Corp. Дата публикации: 2017-09-05.

Electronic device and method of manufacturing semiconductor device

Номер патента: US20150017766A1. Автор: Mao Katsuhara. Владелец: Sony Corp. Дата публикации: 2015-01-15.

Electronic device and method of manufacturing semiconductor device

Номер патента: US09601596B2. Автор: Mao Katsuhara. Владелец: Sony Corp. Дата публикации: 2017-03-21.

Electronic device and method of manufacturing semiconductor device

Номер патента: US09520572B2. Автор: Mao Katsuhara. Владелец: Sony Corp. Дата публикации: 2016-12-13.

Semiconductor device and a manufacturing method thereof

Номер патента: US20130161753A1. Автор: Toshiaki Iwamatsu,Hirofumi Shinohara,Hiromasa YOSHIMORI. Владелец: Renesas Electronics Corp. Дата публикации: 2013-06-27.

Semiconductor device and a manufacturing method thereof

Номер патента: US20140319618A1. Автор: Toshiaki Iwamatsu,Hirofumi Shinohara,Hiromasa YOSHIMORI. Владелец: Renesas Electronics Corp. Дата публикации: 2014-10-30.

Semiconductor device and its manufacturing method

Номер патента: US20060194398A1. Автор: Amane Oishi,Taiki Komoda. Владелец: Toshiba Corp. Дата публикации: 2006-08-31.

Semiconductor device and related manufacturing method

Номер патента: US20160013051A1. Автор: Yizhi Zeng,Jie Zhao. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2016-01-14.

Electronic device and method of manufacturing semiconductor device

Номер патента: US20160172609A1. Автор: Mao Katsuhara. Владелец: Sony Corp. Дата публикации: 2016-06-16.

Semiconductor device with improved electrostatic discharge or electro-over stress protection

Номер патента: US11450657B2. Автор: Yu-Lin Chu,Hsi-Yu Kuo. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-09-20.

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Номер патента: US20190206854A1. Автор: Yu-Lin Chu,Hsi-Yu Kuo. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2019-07-04.

Insulated gate-type semiconductor device and manufacturing method thereof

Номер патента: US7972928B2. Автор: Yukihiro Hisanaga. Владелец: Toyota Motor Corp. Дата публикации: 2011-07-05.

Semiconductor device and its manufacture method

Номер патента: TW498549B. Автор: Akira Asai,Teruhito Ohnishi. Владелец: Matsushita Electric Ind Co Ltd. Дата публикации: 2002-08-11.

Semiconductor device with stepped source structure

Номер патента: US11765896B2. Автор: Nam Jae LEE. Владелец: SK hynix Inc. Дата публикации: 2023-09-19.

Nitride semiconductor device and manufacturing method thereof

Номер патента: US20130082277A1. Автор: Ki Yeol Park,Young Hwan Park,Woo Chul Jeon,Seok Yoon HONG. Владелец: Samsung Electro Mechanics Co Ltd. Дата публикации: 2013-04-04.

Nitride semiconductor device and manufacturing method thereof

Номер патента: US8860087B2. Автор: Ki Yeol Park,Young Hwan Park,Woo Chul Jeon,Seok Yoon HONG. Владелец: Samsung Electro Mechanics Co Ltd. Дата публикации: 2014-10-14.

Nitride semiconductor device and manufacturing method thereof

Номер патента: US20220384632A1. Автор: Wen-Jung Liao,Chih Tung Yeh. Владелец: United Microelectronics Corp. Дата публикации: 2022-12-01.

Semiconductor device and manufacturing method of the semiconductor device

Номер патента: US20230403856A1. Автор: Nam Jae LEE. Владелец: SK hynix Inc. Дата публикации: 2023-12-14.

Vertical semiconductor device and manufacturing method thereof

Номер патента: US20160380093A1. Автор: Chien-Wei Chiu,Tsung-Yi Huang. Владелец: RICHTEK TECHNOLOGY CORP. Дата публикации: 2016-12-29.

Vertical semiconductor device and manufacturing method thereof

Номер патента: US09786776B2. Автор: Chien-Wei Chiu,Tsung-Yi Huang. Владелец: RICHTEK TECHNOLOGY CORP. Дата публикации: 2017-10-10.

Semiconductor device and manufacturing method thereof

Номер патента: US20180248022A1. Автор: Tianchun Ye. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2018-08-30.

Manufacturing method of semiconductor device

Номер патента: US09666473B2. Автор: Ching-Hung Kao. Владелец: United Microelectronics Corp. Дата публикации: 2017-05-30.

Vertical semiconductor device having a non-conductive substrate and a gallium nitride layer

Номер патента: US09466552B2. Автор: Chien-Wei Chiu,Tsung-Yi Huang. Владелец: RICHTEK TECHNOLOGY CORP. Дата публикации: 2016-10-11.

Semiconductor device and manufacturing method of the same

Номер патента: US09406710B2. Автор: Ching-Hung Kao. Владелец: United Microelectronics Corp. Дата публикации: 2016-08-02.

Semiconductor device with metal silicide blocking region and method of manufacturing the same

Номер патента: US20150187756A1. Автор: Ching-Chen Hao,I-Hsiang Hung,Wei-Der Sun. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2015-07-02.

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Номер патента: US09871035B2. Автор: Ching-Chen Hao,I-Hsiang Hung,Wei-Der Sun. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-01-16.

Semiconductor device and a manufacturing method thereof

Номер патента: US8395203B2. Автор: Yasushi Ishii,Hiraku Chakihara. Владелец: Renesas Electronics Corp. Дата публикации: 2013-03-12.

Semiconductor device and a manufacturing method thereof

Номер патента: US20130164927A1. Автор: Yasushi Ishii,Hiraku Chakihara. Владелец: Renesas Electronics Corp. Дата публикации: 2013-06-27.

Semiconductor device with dummy cells of different data types

Номер патента: US09471737B1. Автор: Min Paek,Nor Razman Md Zin. Владелец: Altera Corp. Дата публикации: 2016-10-18.

Manufacturing method of semiconductor device

Номер патента: US20160027651A1. Автор: Kentaro Saito,Yoshiyuki Kawashima,Hiraku Chakihara. Владелец: Renesas Electronics Corp. Дата публикации: 2016-01-28.

Manufacturing method of semiconductor device

Номер патента: US09748360B2. Автор: Takuya Hagiwara,Tetsuro Hanawa. Владелец: Renesas Electronics Corp. Дата публикации: 2017-08-29.

Electric Field Modification for Nitrogen-Polar Group III-Nitride Semiconductor Devices

Номер патента: US20240290847A1. Автор: Scott Sheppard,Kyle BOTHE,Chris Hardiman. Владелец: Wolfspeed Inc. Дата публикации: 2024-08-29.

Mechanisms for semiconductor device structure

Номер патента: US09425048B2. Автор: Mei-Yun Wang,Fu-Kai Yang,Hsien-Cheng WANG,Hsin-Ying Lin,Audrey Hsiao-Chiu HSU,Shih-Wen Liu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-08-23.

Semiconductor device and manufacturing method thereof employing an etching transition layer

Номер патента: US11888052B2. Автор: YU Zhou,Qian Sun,Hui Yang,Shuai Su,Yaozong ZHONG,Jianxun Liu,Xiaoning Zhan,Meixin FENG,Hongwei Gao. Владелец: Suzhou Institute of Nano Tech and Nano Bionics of CAS. Дата публикации: 2024-01-30.

Methods of cleaning a semiconductor device and methods of manufacturing a semiconductor device using the same

Номер патента: US20080124909A1. Автор: Keum-Joo Lee,Jin-Hye Bae,Dae-Keun Kang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2008-05-29.

Semiconductor device having adjacent IGBT and diode regions with a shifted boundary plane between a collector region and a cathode region

Номер патента: US09960165B2. Автор: Satoru Kameyama,Yuki Horiuchi. Владелец: Toyota Motor Corp. Дата публикации: 2018-05-01.

Semiconductor device, integrated circuit, and electronic device

Номер патента: US20230282690A1. Автор: Chunkun JIAO. Владелец: Huawei Digital Power Technologies Co Ltd. Дата публикации: 2023-09-07.

Method of manufacturing a semiconductor device using a halo implantation

Номер патента: EP1234335B1. Автор: Zoran Krivokapic,Brian Swanson,Ahmad Ghaemmaghami. Владелец: Advanced Micro Devices Inc. Дата публикации: 2006-11-15.

Semiconductor device

Номер патента: US09917204B2. Автор: Tadashi Nakano,Kosei Noda,Mai SUGIKAWA. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2018-03-13.

Semiconductor device

Номер патента: US09293590B2. Автор: Tadashi Nakano,Kosei Noda,Mai SUGIKAWA. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2016-03-22.

3d stacking semiconductor device and manufacturing method thereof

Номер патента: US20180308748A1. Автор: Shih-Hung Chen. Владелец: Macronix International Co Ltd. Дата публикации: 2018-10-25.

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Номер патента: US20150255617A1. Автор: Tadashi Nakano,Kosei Noda,Mai SUGIKAWA. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2015-09-10.

Semiconductor device and manufacturing method of forming the same

Номер патента: US20240136348A1. Автор: Seungchul Lee,Yijyun Ke. Владелец: PanJit International Inc. Дата публикации: 2024-04-25.

Semiconductor device having a surface insulator layer and manufacturing method therefor

Номер патента: US10312093B2. Автор: FENG CHEN,Xianming Zhang,Ling TANG,Leibin Yuan,Feng DOU. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2019-06-04.

Semiconductor device and manufacturing method therefor

Номер патента: US20180277644A1. Автор: FENG CHEN,Xianming Zhang,Ling TANG,Leibin Yuan,Feng DOU. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2018-09-27.

Method for forming quantum dot, quantum semiconductor device, and its manufacturing method

Номер патента: EP1507293A1. Автор: Toshio Ohshima,Hai-zhi Fujitsu Limited SONG. Владелец: Fujitsu Ltd. Дата публикации: 2005-02-16.

Semiconductor device and its manufacturing method, and display device and electronic appliance

Номер патента: US20070138477A1. Автор: Tatsuya Honda. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2007-06-21.

Semiconductor device, memory device, electronic device, and method for driving semiconductor device

Номер патента: US09754657B2. Автор: Yutaka Shionoiri,Tatsuya Onuki. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2017-09-05.

Semiconductor device structure and manufacturing method thereof

Номер патента: US09666574B1. Автор: Chen-Yi Lee,Alexander Kalnitsky,Pei-Lun Wang,Mohammad Al-Shyoukh,Yu-Chang Jong,Dah-Chuen Ho,Shih-Fen Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-05-30.

Semiconductor device, FinFET transistor and fabrication method thereof

Номер патента: US09799676B2. Автор: Ming Zhou,Xinyun Xie. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2017-10-24.

Semiconductor device, memory device, and driving method thereof

Номер патента: US09887010B2. Автор: Yoshinobu Asami. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2018-02-06.

Semiconductor device structure and manufacturing method thereof

Номер патента: US20240055501A1. Автор: Huang-Lin Chao,Chung-Liang Cheng,Pinyen Lin,Li-Zhen YU,Lin-Yu HUANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-02-15.

Ultrahigh voltage resistor, semiconductor device, and the manufacturing method thereof

Номер патента: US10109705B2. Автор: Young Bae Kim,Kwang Il Kim. Владелец: MagnaChip Semiconductor Ltd. Дата публикации: 2018-10-23.

Ultrahigh voltage resistor, semiconductor device, and the manufacturing method thereof

Номер патента: US20160181351A1. Автор: Young Bae Kim,Kwang Il Kim. Владелец: MagnaChip Semiconductor Ltd. Дата публикации: 2016-06-23.

Semiconductor device structure and manufacturing method thereof

Номер патента: US10319719B2. Автор: Chen-Yi Lee,Alexander Kalnitsky,Pei-Lun Wang,Mohammad Al-Shyoukh,Yu-Chang Jong,Dah-Chuen Ho,Shih-Fen Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2019-06-11.

Semiconductor device structure and manufacturing method thereof

Номер патента: US20170154882A1. Автор: Chen-Yi Lee,Alexander Kalnitsky,Pei-Lun Wang,Mohammad Al-Shyoukh,Yu-Chang Jong,Dah-Chuen Ho,Shih-Fen Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-06-01.

Semiconductor device structure and manufacturing method thereof

Номер патента: US20170243865A1. Автор: Chen-Yi Lee,Alexander Kalnitsky,Pei-Lun Wang,Mohammad Al-Shyoukh,Yu-Chang Jong,Dah-Chuen Ho,Shih-Fen Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-08-24.

Semiconductor device, capacitor, and manufacturing method thereof

Номер патента: US20230329002A1. Автор: Yasumasa Yamane,Shunpei Yamazaki,Yuki Ito,Yasuhiro Jinbo,Fumito Isaka,Tatsuya Onuki,Haruyuki Baba,Hitoshi KUNITAKE,Kazuki Tanemura. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2023-10-12.

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Номер патента: US20240213368A1. Автор: Yun-Hung Shen. Владелец: Hon Hai Precision Industry Co Ltd. Дата публикации: 2024-06-27.

Semiconductor device and its manufacturing method

Номер патента: US6933575B2. Автор: Masahiro Hayashi. Владелец: Seiko Epson Corp. Дата публикации: 2005-08-23.

Semiconductor device, display apparatus, electronic device, and operation method of semiconductor device

Номер патента: US20220293049A1. Автор: Yoshiyuki Kurokawa,Hiromichi Godo,Kazuki Tsuda,Hidefumi Rikimaru,Satoru Ohshita. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2022-09-15.

Semiconductor element, semiconductor device, semiconductor element manufacturing method, semiconductor device manufacturing method, and electronic device

Номер патента: JP3801160B2. Автор: 貴幸 近藤. Владелец: Seiko Epson Corp. Дата публикации: 2006-07-26.

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Номер патента: CN110199392A. Автор: 高桥洋. Владелец: Sony Semiconductor Solutions Corp. Дата публикации: 2019-09-03.

Semiconductor device and manufacturing method thereof

Номер патента: US20230378254A1. Автор: Jong Ho Park,Che-Ming Lin,Kwang Yeon JUN. Владелец: PanJit International Inc. Дата публикации: 2023-11-23.

Semiconductor device and manufacturing method thereof

Номер патента: US8436420B2. Автор: Kyu Hyun Mo. Владелец: Dongbu HitekCo Ltd. Дата публикации: 2013-05-07.

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Номер патента: US20110168983A1. Автор: Kyu Hyun Mo. Владелец: Dongbu HitekCo Ltd. Дата публикации: 2011-07-14.

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Номер патента: US20240250141A1. Автор: Chih-Hao Wang,Kuo-Cheng Chiang,Shi Ning Ju,Chih-Chao CHOU,Wen-Ting Lan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-25.

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Номер патента: US20180315603A1. Автор: Guang Li YANG,Dae Sub Jung,De Yan CHEN. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2018-11-01.

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Номер патента: US09679901B1. Автор: Chin-Lung Lin,Shih-Fang Tzou,Le-Tien Jung,Ying-Chiao Wang,Chien-Ting Ho,Harn-Jiunn Wang. Владелец: Fujian Jinhua Integrated Circuit Co Ltd. Дата публикации: 2017-06-13.

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Номер патента: US20230187513A1. Автор: Chen-Shuo Huang. Владелец: AUO Corp. Дата публикации: 2023-06-15.

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Номер патента: US20190288000A1. Автор: Kang Sik Choi. Владелец: SK hynix Inc. Дата публикации: 2019-09-19.

Memory device and manufacturing method the same

Номер патента: US09786669B2. Автор: Shunpei Yamazaki,Ryoji Nomura,Masayuki Sakakura,Tamae Takano,Yoshinobu Asami. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2017-10-10.

Semiconductor device and manufacturing method therefor

Номер патента: US20200020806A1. Автор: Fei Zhou. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2020-01-16.

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Номер патента: US20170365629A1. Автор: Koichi Kaneko,Hirokazu Fujimaki. Владелец: Lapis Semiconductor Co Ltd. Дата публикации: 2017-12-21.

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Номер патента: US20240128339A1. Автор: Le Li,Jun Zhou,Guangjie XUE. Владелец: Wuhan Xinxin Semiconductor Manufacturing Co Ltd. Дата публикации: 2024-04-18.

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Номер патента: US20240234319A9. Автор: Jin Kyu Kim,Jae Hyun Ahn,Ho Jun Kim,So Ra You,Jee Woong Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-11.

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Номер патента: US20240136290A1. Автор: Jin Kyu Kim,Jae Hyun Ahn,Ho Jun Kim,So Ra You,Jee Woong Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-04-25.

Semiconductor device with air gap below landing pad and method for forming the same

Номер патента: US12051648B2. Автор: Chih-Tsung WU. Владелец: Nanya Technology Corp. Дата публикации: 2024-07-30.

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Номер патента: US20150060958A1. Автор: Erh-Kun Lai,Shih-Hung Chen. Владелец: Macronix International Co Ltd. Дата публикации: 2015-03-05.

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Номер патента: US20230395691A1. Автор: Chih-Hao Wang,Chung-Wei Hsu,Mao-Lin Huang,Lung-Kun Chu,Jia-Ni YU,Kuo-Cheng Chiang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-12-07.

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Номер патента: US11830924B2. Автор: Chih-Hao Wang,Chung-Wei Hsu,Mao-Lin Huang,Lung-Kun Chu,Jia-Ni YU,Kuo-Cheng Chiang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-28.

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Номер патента: US20220328652A1. Автор: Chih-Hao Wang,Chung-Wei Hsu,Mao-Lin Huang,Lung-Kun Chu,Jia-Ni YU,Kuo-Cheng Chiang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-10-13.

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Номер патента: US20210305400A1. Автор: Chih-Hao Wang,Chung-Wei Hsu,Mao-Lin Huang,Lung-Kun Chu,Jia-Ni YU,Kuo-Cheng Chiang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-09-30.

Semiconductor device having mirror-symmetric terminals and methods of forming the same

Номер патента: US09673135B2. Автор: Wei Zhang,John D. Weld,Douglas Dean Lopata. Владелец: Altera Corp. Дата публикации: 2017-06-06.

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Номер патента: US11916125B2. Автор: Chih-Hao Wang,Kuo-Cheng Chiang,Shi Ning Ju,Chih-Chao CHOU,Wen-Ting Lan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-02-27.

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Номер патента: US20230369223A1. Автор: Mei-Yun Wang,Po-Yu Huang,Fu-Kai Yang,Chia-Hsien Yao. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-16.

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Номер патента: US11721626B2. Автор: Mei-Yun Wang,Po-Yu Huang,Fu-Kai Yang,Chia-Hsien Yao. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-08-08.

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Номер патента: EP3944298A1. Автор: Mei-Yun Wang,Po-Yu Huang,Fu-Kai Yang,Jason Yao. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-01-26.

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Номер патента: US20220359699A1. Автор: Chih-Hao Wang,Kuo-Cheng Chiang,Shi Ning Ju,Chih-Chao CHOU,Wen-Ting Lan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-11-10.

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Номер патента: US20210265224A1. Автор: Yu-Kuan Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-08-26.

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Номер патента: US11855225B2. Автор: Wei-Yang Lee,Chia-Pin Lin,Ting-Yeh Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-12-26.

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Номер патента: TW478157B. Автор: Yukihiro Ushiku. Владелец: Toshiba Corp. Дата публикации: 2002-03-01.

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Номер патента: US12136665B2. Автор: Katsumi Sato. Владелец: Mitsubishi Electric Corp. Дата публикации: 2024-11-05.

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Номер патента: US09455329B2. Автор: KYUNG Kyu Min,Min Soo Yoo,Il Woong KWON. Владелец: SK hynix Inc. Дата публикации: 2016-09-27.

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Номер патента: US20210376089A1. Автор: Georgios Vellianitis,Marcus Johannes Henricus Van Dal,Gerben Doornbos. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-12-02.

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Номер патента: US09799557B2. Автор: Kuan-Chi Tsai,Kuo-Yu Cheng,Wei-Kung Tsai. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-10-24.

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Номер патента: US09461164B2. Автор: Thorsten Meyer,Werner Schwetlick. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2016-10-04.

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Номер патента: US09437741B2. Автор: Shunpei Yamazaki,Hiroyuki Miyake,Shinpei Matsuda,Kenichi Okazaki,Masahiko Hayakawa. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2016-09-06.

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Номер патента: US09558990B2. Автор: KYUNG Kyu Min. Владелец: SK hynix Inc. Дата публикации: 2017-01-31.

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Номер патента: US09502432B1. Автор: Wan Cheul Shin. Владелец: SK hynix Inc. Дата публикации: 2016-11-22.

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Номер патента: US10103082B2. Автор: Junhong Feng. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2018-10-16.

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Номер патента: US20180005915A1. Автор: Junhong Feng. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2018-01-04.

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Номер патента: US09478535B2. Автор: Shunpei Yamazaki,Masahiro Katayama,Yukinori Shima,Ami Sato. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2016-10-25.

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Номер патента: US20200411550A1. Автор: Kang Sik Choi. Владелец: SK hynix Inc. Дата публикации: 2020-12-31.

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Номер патента: US20230157025A1. Автор: Kang Sik Choi. Владелец: SK hynix Inc. Дата публикации: 2023-05-18.

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Номер патента: US20170148639A1. Автор: Chun Hsiung Tsai,Tsz-Mei Kwok. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-05-25.

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Номер патента: US20080203440A1. Автор: Masakatsu Tsuchiaki. Владелец: Individual. Дата публикации: 2008-08-28.

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Номер патента: US09496149B2. Автор: Chun Hsiung Tsai,Tsz-Mei Kwok. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-11-15.

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Номер патента: US09691673B2. Автор: Hirotaka Otake,Toshio Hanada. Владелец: ROHM CO LTD. Дата публикации: 2017-06-27.

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Номер патента: US20230215815A1. Автор: Ping-Heng Wu. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-07-06.

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Номер патента: US11915946B2. Автор: Jhon Jhy Liaw. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-02-27.

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Номер патента: US20240162059A1. Автор: Jhon Jhy Liaw. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-05-16.

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Номер патента: US09494644B2. Автор: Yoshiyuki Kurokawa. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2016-11-15.

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Номер патента: US09343551B2. Автор: Chih-Hao Wang,Zhiqiang Wu,Jean-Pierre Colinge,Kuo-Cheng Ching,Carlos H. Diaz. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-05-17.

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Номер патента: US20220246520A1. Автор: Huilong Zhu. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2022-08-04.

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Номер патента: US11894304B2. Автор: Chih-Tsung WU. Владелец: Nanya Technology Corp. Дата публикации: 2024-02-06.

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Номер патента: US11824523B2. Автор: Sanjay Havanur,M. Ayman SHIBIB. Владелец: Vishay Siliconix LLC. Дата публикации: 2023-11-21.

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Номер патента: US20210083660A1. Автор: Sanjay Havanur,M. Ayman SHIBIB. Владелец: Siliconix Inc. Дата публикации: 2021-03-18.

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Номер патента: WO2021050748A1. Автор: Sanjay Havanur,M. Ayman SHIBIB. Владелец: SILICONIX INCORPORATED. Дата публикации: 2021-03-18.

Semiconductor device with multiple independent gates

Номер патента: EP4029056A1. Автор: Sanjay Havanur,M. Ayman SHIBIB. Владелец: Siliconix Inc. Дата публикации: 2022-07-20.

Semiconductor device and manufacturing method for the same

Номер патента: US20060208349A1. Автор: Toshiyuki Fukuda,Hiroaki Fujimoto,Mutsuo Tsuji,Takashi Yui,Yoshiaki Takeoka. Владелец: Matsushita Electric Industrial Co Ltd. Дата публикации: 2006-09-21.

Semiconductor device, semiconductor device terminal and manufacturing method thereof

Номер патента: CN104332488A. Автор: 王根毅,钟圣荣,邓小社,周东飞. Владелец: Wuxi CSMC Semiconductor Co Ltd. Дата публикации: 2015-02-04.

Semiconductor device with air gap below landing pad and method for forming the same

Номер патента: US20240006321A1. Автор: Chih-Tsung WU. Владелец: Nanya Technology Corp. Дата публикации: 2024-01-04.

A semiconductor device and the manufacturing method of the same

Номер патента: TW201613089A. Автор: Heng-Kuang Lin,Ya-Yu YANG. Владелец: Epistar Corp. Дата публикации: 2016-04-01.

Semiconductor Device, CPU, Image Processing Circuit and Electronic Device, and Driving Method of Semiconductor Device

Номер патента: US20070187684A1. Автор: Jun Koyama. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2007-08-16.

Capacitor, semiconductor device and its manufacture method, electrooptical device and electronic machine

Номер патента: CN1405805A. Автор: 渡边吉祥. Владелец: Seiko Epson Corp. Дата публикации: 2003-03-26.

Capacitor, semiconductor device and its manufacture method, electrooptical device and electronic machine

Номер патента: CN100388395C. Автор: 渡边吉祥. Владелец: Seiko Epson Corp. Дата публикации: 2008-05-14.

Semiconductor device and manufacturing method therefor

Номер патента: US20030218230A1. Автор: Hideki Takahashi,Shinji Aono. Владелец: Mitsubishi Electric Corp. Дата публикации: 2003-11-27.

Semiconductor device structure with high contact area

Номер патента: US11855215B2. Автор: Sung-Li Wang,Pinyen Lin,Pang-Yen Tsai,Shuen-Shin Liang,Keng-Chu Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-12-26.

Semiconductor device and manufacturing method thereof

Номер патента: US09437611B1. Автор: Erh-Kun Lai. Владелец: Macronix International Co Ltd. Дата публикации: 2016-09-06.

Metal film and manufacturing method of the metal film, and semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20230411320A1. Автор: Tadashi Yamaguchi. Владелец: Renesas Electronics Corp. Дата публикации: 2023-12-21.

Diboride single crystal substrate, semiconductor device using this and its manufacturing method

Номер патента: EP1538243A4. Автор: Satoshi Kamiyama,Hiroyuki Matsunami,Hiroyuki Kinoshita,Isamu Akasaki,Hiroshi Amano,Shigeki Otani,Jun Suda. Владелец: Kyocera Corp. Дата публикации: 2008-04-02.

Semiconductor device and manufacturing method therefor, power amplification circuit, and electronic device

Номер патента: US20240274688A1. Автор: Tao Liu,Ming Lu,Haijun Li,Zhili Zhang,Jin Rao,Shuiming LI. Владелец: Huawei Technologies Co Ltd. Дата публикации: 2024-08-15.

Semiconductor device, manufacturing method thereof, circuit board, and electronic appliance

Номер патента: US20050199997A1. Автор: Terunao Hanaoka. Владелец: Seiko Epson Corp. Дата публикации: 2005-09-15.

Semiconductor device package and manufacturing method thereof

Номер патента: US09966300B1. Автор: Ronald Patrick Huemoeller,David Jon Hiner,Michael G. Kelly,Won Chul Do. Владелец: Amkor Technology Inc. Дата публикации: 2018-05-08.

Semiconductor device package and manufacturing method thereof

Номер патента: US12136565B2. Автор: Ronald Patrick Huemoeller,David Jon Hiner,Michael G. Kelly,Won Chul Do. Владелец: Amkor Technology Singapore Holding Pte Ltd. Дата публикации: 2024-11-05.

Semiconductor device package and manufacturing method thereof

Номер патента: US09553041B1. Автор: Ronald Patrick Huemoeller,David Jon Hiner,Michael G. Kelly,Won Chul Do. Владелец: Amkor Technology Inc. Дата публикации: 2017-01-24.

Semiconductor device and a manufacturing method thereof

Номер патента: US09396971B2. Автор: Yukihiro Sato,Nobuya Koike. Владелец: Renesas Electronics Corp. Дата публикации: 2016-07-19.

Semiconductor device and a manufacturing method thereof

Номер патента: US20180308884A1. Автор: Fumitoshi Takahashi,Yotaro Goto,Takeshi Kamino. Владелец: Renesas Electronics Corp. Дата публикации: 2018-10-25.

Semiconductor device and a manufacturing method thereof

Номер патента: US20160172419A1. Автор: Takeshi Kamino. Владелец: Renesas Electronics Corp. Дата публикации: 2016-06-16.

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Номер патента: RU2544887C2. Автор: Хидео КОБАЯСИ,Масанори ОГУРА,Тецунобу КОТИ,Масаси КИТАНИ. Владелец: Кэнон Кабусики Кайся. Дата публикации: 2015-03-20.

Semiconductor device structure and manufacturing method

Номер патента: US20150262955A1. Автор: Chun-Jen Chen,Yi-Chen Liu,Yi-Jen LAI,Hsi-Kuei Cheng,Yung-Sheng Liu,Li-Guo LEE. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2015-09-17.

Semiconductor device and a manufacturing method thereof

Номер патента: US09842878B2. Автор: Takashi Terada,Shinya Hori. Владелец: Renesas Electronics Corp. Дата публикации: 2017-12-12.

Semiconductor device structure and manufacturing method

Номер патента: US09806046B2. Автор: Chun-Jen Chen,Yi-Chen Liu,Yi-Jen LAI,Hsi-Kuei Cheng,Yung-Sheng Liu,Li-Guo LEE. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-10-31.

Semiconductor device and a manufacturing method thereof

Номер патента: US09685474B2. Автор: Takashi Terada,Shinya Hori. Владелец: Renesas Electronics Corp. Дата публикации: 2017-06-20.

Semiconductor device, manufacturing method thereof, circuit board, and electronic appliance

Номер патента: US7459637B2. Автор: Terunao Hanaoka. Владелец: Seiko Epson Corp. Дата публикации: 2008-12-02.

Semiconductor device and method of manufacturing the same, circuit board, and electronic instrument

Номер патента: US20070029673A1. Автор: Koji Yamaguchi. Владелец: Seiko Epson Corp. Дата публикации: 2007-02-08.

Semiconductor device and its manufacturing method

Номер патента: US20080111209A1. Автор: Chihiro Shin. Владелец: Seiko Epson Corp. Дата публикации: 2008-05-15.

Semiconductor device structure and manufacturing method

Номер патента: US09735123B2. Автор: Chun-Jen Chen,Yi-Chen Liu,Yi-Jen LAI,Hsi-Kuei Cheng,Yung-Sheng Liu,Li-Guo LEE. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-08-15.

Semiconductor device, manufacturing method, solid state image sensor, and electronic equipment

Номер патента: US10950637B2. Автор: Masaki HANEDA. Владелец: Sony Corp. Дата публикации: 2021-03-16.

Semiconductor device, manufacturing method, solid state image sensor, and electronic equipment

Номер патента: US20200227462A1. Автор: Masaki HANEDA. Владелец: Sony Corp. Дата публикации: 2020-07-16.

Semiconductor device and its manufacturing method

Номер патента: US20020180053A1. Автор: Hirokazu Ejiri. Владелец: Sony Corp. Дата публикации: 2002-12-05.

Resin-encapsulated semiconductor device and its manufacturing method

Номер патента: US09991213B2. Автор: Shoji Yasunaga,Yasumasa Kasuya,Motoharu Haga. Владелец: ROHM CO LTD. Дата публикации: 2018-06-05.

Semiconductor device and its manufacturing method

Номер патента: US09972505B2. Автор: Masahiro Matsumoto,Kazuyoshi Maekawa,Yuichi Kawano. Владелец: Renesas Electronics Corp. Дата публикации: 2018-05-15.

Organic light emiting transistor and manufacturing method thereof, display panel and electronic device

Номер патента: US20210359280A1. Автор: Li Xiao,LIANG Chen,MING Yang,Lei Wang,MINGHUA XUAN,Xiaochuan Chen,Dongni LIU,Detato ZHAO. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2021-11-18.

Semiconductor device, communication apparatus, and producing method thereof

Номер патента: US12126327B2. Автор: Zhiguo Lai,Qinghua Yang,Hairui Liu. Владелец: Suzhou Huntersun Electronics Co Ltd. Дата публикации: 2024-10-22.

Semiconductor device and its manufacturing method

Номер патента: US09496232B2. Автор: Akira Yajima. Владелец: Renesas Electronics Corp. Дата публикации: 2016-11-15.

Radiation-hardened semiconductor structure, a semiconductor device including the radiation-hardened semicoductor structure, and methods of forming the radiation-hardened semiconductor structure and semiconductor device

Номер патента: US20120025311A1. Автор: John S. Canham. Владелец: Alliant Techsystems Inc. Дата публикации: 2012-02-02.

Semiconductor device and a manufacturing method thereof

Номер патента: US20150187606A1. Автор: Yukihiro Sato,Nobuya Koike. Владелец: Renesas Electronics Corp. Дата публикации: 2015-07-02.

Semiconductor device and semiconductor manufacturing method thereof

Номер патента: US20240136199A1. Автор: Wen-Chih Chiou,Yung-Chi Lin,Tsang-Jiuh Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-04-25.

Semiconductor device and its manufacturing method

Номер патента: US20170033074A1. Автор: Akira Yajima. Владелец: Renesas Electronics Corp. Дата публикации: 2017-02-02.

Semiconductor device and its manufacturing method

Номер патента: US20090072286A1. Автор: Takafumi Noda. Владелец: Seiko Epson Corp. Дата публикации: 2009-03-19.

Semiconductor device and its manufacturing method, memory and memory system

Номер патента: US20240164096A1. Автор: Zhiliang Xia,Kun Zhang,Linchun Wu,Wenxi Zhou,Zongliang Huo. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-05-16.

Semiconductor device and its manufacturing method

Номер патента: US09929120B2. Автор: Akira Yajima. Владелец: Renesas Electronics Corp. Дата публикации: 2018-03-27.

Semiconductor device, electronic device, and method of controlling semiconductor device

Номер патента: US20240128282A1. Автор: Takashi Masuda,Koichi Okamoto,Hideaki Mogi,Mitsushi TABATA,Shinichirou Saeki. Владелец: Sony Semiconductor Solutions Corp. Дата публикации: 2024-04-18.

Semiconductor device, solid-state image pickup element, image pickup device, and electronic apparatus

Номер патента: US11923395B2. Автор: Minoru Ishida,Yoshiaki Masuda. Владелец: Sony Group Corp. Дата публикации: 2024-03-05.

Semiconductor device and test apparatus and method thereof

Номер патента: US11887901B2. Автор: Jae Won Kim,Wan Tae Kim,Jin A Kim,Yong Jun BAN,Soo Chul JEON. Владелец: Silicon Works Co Ltd. Дата публикации: 2024-01-30.

Semiconductor device, semiconductor device package, and manufacturing methods thereof

Номер патента: US20210021097A1. Автор: Shigeru Matsushita,Takuya Hashimoto,Sumio Uehara,Kazuhito Yumoto,Eiichiro OKAHISA,Katsuya NAKAZAWA,Suguru Kobayashi. Владелец: Nichia Corp. Дата публикации: 2021-01-21.

Cooling mechanism having nanocapillary structure, semiconductor device provided with cooling mechanism, method for manufacturing same, and electronic device

Номер патента: US20240030102A1. Автор: Christopher Wright,Jan Jasper Van Den Berg,Matthew LAWRENSON,Hikaru Ohira,Yoichiro Fujinaga. Владелец: Sony Semiconductor Solutions Corp. Дата публикации: 2024-01-25.

Cooling mechanism having nanocapillary structure, semiconductor device equipped with cooling mechanism, method for producing same, and electronic device

Номер патента: EP4266364A1. Автор: Christopher Wright,Jan Jasper Van Den Berg,Matthew LAWRENSON,Hikaru Ohira,Yoichiro Fujinaga. Владелец: Sony Semiconductor Solutions Corp. Дата публикации: 2023-10-25.

Optical semiconductor device, method for manufacturing same, solid-state imaging device, and electronic device

Номер патента: US20240206322A1. Автор: Yuta Saito,Daiki KINOSHITA,Kenta Kuroda. Владелец: Kaneka Corp. Дата публикации: 2024-06-20.

Substrate material for mounting semiconductor device thereon and manufacturing method thereof

Номер патента: US5167697A. Автор: Yoshihiro Umeda,Takeshie Koumura,Jitsuo Matsumoto. Владелец: Nippon Tungsten Co Ltd. Дата публикации: 1992-12-01.

Semiconductor device tape carrier, manufacturing method for semiconductor device, semiconductor device, and semiconductor module device

Номер патента: US20080061432A1. Автор: Kenji Toyosawa,Toshiharu Seko. Владелец: Sharp Corp. Дата публикации: 2008-03-13.

Semiconductor device, communication apparatus, and producing method thereof

Номер патента: EP4325722A2. Автор: Zhiguo Lai,Qinghua Yang,Hairui Liu. Владелец: Suzhou Huntersun Electronics Co Ltd. Дата публикации: 2024-02-21.

Semiconductor device, communication apparatus, and producing method thereof

Номер патента: EP4325722A3. Автор: Zhiguo Lai,Qinghua Yang,Hairui Liu. Владелец: Suzhou Huntersun Electronics Co Ltd. Дата публикации: 2024-04-03.

Semiconductor device and the manufacturing method thereof

Номер патента: US11948884B2. Автор: Chen Ying Chieh,Lin TZU HSIANG,Chen CHIH HAO,Wu WEI CHE. Владелец: Epistar Corp. Дата публикации: 2024-04-02.

Semiconductor device and method of manufacturing the same, circuit board, and electronic instrument

Номер патента: US20050040542A1. Автор: Nobuaki Hashimoto. Владелец: Seiko Epson Corp. Дата публикации: 2005-02-24.

Semiconductor device and a manufacturing method thereof

Номер патента: US5926694A. Автор: Kenji Matsuda,Ippei Fujiyama,Yasuhide Chigawa. Владелец: PFU Ltd. Дата публикации: 1999-07-20.

Semiconductor device and method of manufacturing the same, circuit board, and electronic instrument

Номер патента: US20050098885A1. Автор: Akiyoshi Aoyagi. Владелец: Seiko Epson Corp. Дата публикации: 2005-05-12.

Semiconductor device and method of fabricating the same, circuit board, and electronic instrument

Номер патента: US6924558B2. Автор: Terunao Hanaoka. Владелец: Seiko Epson Corp. Дата публикации: 2005-08-02.

Semiconductor device and a manufacturing method thereof

Номер патента: US20210384107A1. Автор: Hyo Ju Kim,Kyeong bin LIM,Sung Hyup Kim,Ho Chang LEE,Jeong Min NA. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-12-09.

Semiconductor device and a manufacturing method thereof

Номер патента: US20200020610A1. Автор: Hyo Ju Kim,Kyeong bin LIM,Sung Hyup Kim,Ho Chang LEE,Jeong Min NA. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-01-16.

Circuit substrate and manufacturing method and detection method therefor, and electronic apparatus

Номер патента: US20240282900A1. Автор: HAO CHENG,Wei Zhang,Zhaohui Li,Lingyun SHI,Shubai Zhang,Zhifu Yang,Longtao HUANG. Владелец: BOE Jingxin Technology Co Ltd. Дата публикации: 2024-08-22.

Semiconductor device and its manufacturing method

Номер патента: US20030155652A1. Автор: Kenji Masumoto,Mutsumi Masumoto,Kensho Murata. Владелец: Individual. Дата публикации: 2003-08-21.

Semiconductor device, equipment, and manufacturing method of semiconductor device

Номер патента: US20230008401A1. Автор: Takuya Hara,Takumi Ogino. Владелец: Canon Inc. Дата публикации: 2023-01-12.

Semiconductor device and its manufacturing method

Номер патента: US20030107054A1. Автор: Kenji Masumoto,Mutsumi Masumoto,Kensho Murata. Владелец: Individual. Дата публикации: 2003-06-12.

Semiconductor device, equipment, and manufacturing method of semiconductor device

Номер патента: EP4117031A3. Автор: Takuya Hara,Takumi Ogino. Владелец: Canon Inc. Дата публикации: 2023-08-02.

Semiconductor device and a manufacturing method of the same

Номер патента: US20060220221A1. Автор: Yoshihiko Shimanuki. Владелец: Renesas Technology Corp. Дата публикации: 2006-10-05.

Semiconductor device and its manufacturing method

Номер патента: US6806539B2. Автор: Hitoshi Aoki. Владелец: Sharp Corp. Дата публикации: 2004-10-19.

Semiconductor device and a manufacturing method of the same

Номер патента: US20070075414A1. Автор: Takashi Miwa,Yasumi Tsutsumi. Владелец: Renesas Technology Corp. Дата публикации: 2007-04-05.

ZnO based semiconductor device and its manufacture method

Номер патента: EP2093810A3. Автор: Hiroyuki Kato,Akio Ogawa,Hiroshi Kotani,Michihiro Sano,Naochika Horio,Tomofumi Yamamuro. Владелец: Stanley Electric Co Ltd. Дата публикации: 2013-10-16.

Semiconductor device, communication apparatus, and producing method thereof

Номер патента: US20240120903A1. Автор: Zhiguo Lai,Qinghua Yang,Hairui Liu. Владелец: Suzhou Huntersun Electronics Co Ltd. Дата публикации: 2024-04-11.

Semiconductor device and corresponding manufacturing method

Номер патента: US11915989B2. Автор: Giovanni Graziosi,Riccardo VILLA,Aurora SANNA. Владелец: STMICROELECTRONICS SRL. Дата публикации: 2024-02-27.

Semiconductor device and corresponding manufacturing method

Номер патента: US20220238405A1. Автор: Giovanni Graziosi,Riccardo VILLA,Aurora SANNA. Владелец: STMICROELECTRONICS SRL. Дата публикации: 2022-07-28.

A semiconductor device having different metal-semiconductor portions formed in a semiconductor region and a method for fabricating the semiconductor device

Номер патента: WO2003075326A3. Автор: Manfred Horstmann,Karsten Wieczorek,Rolf Stephan. Владелец: Advanced Micro Devices Inc. Дата публикации: 2004-04-01.

Semiconductor device and a manufacturing method of the same

Номер патента: US20110269268A1. Автор: Hiroshi Ono,Tamaki Wada,Naoki Kawanabe,Nobuyasu MUTO. Владелец: Renesas Electronics Corp. Дата публикации: 2011-11-03.

Semiconductor device, electronic device, and method for manufacturing semiconductor device

Номер патента: US20240055461A1. Автор: Yoshiaki Yanagawa,Takushi Shigetoshi. Владелец: Sony Group Corp. Дата публикации: 2024-02-15.

Semiconductor device and its manufacturing method

Номер патента: US20090321896A1. Автор: Takaharu Yamano. Владелец: Shinko Electric Industries Co Ltd. Дата публикации: 2009-12-31.

Semiconductor device, electronic device, and method for manufacturing semiconductor device

Номер патента: US20230284382A1. Автор: Ichiro Ide,Kodai Eguchi. Владелец: Kioxia Corp. Дата публикации: 2023-09-07.

Semiconductor device and its manufacturing method

Номер патента: US7919843B2. Автор: Takaharu Yamano. Владелец: Shinko Electric Industries Co Ltd. Дата публикации: 2011-04-05.

Optical semiconductor device, method for manufacturing the same, and optical module and optical communication apparatus provided with the optical semiconductor device

Номер патента: US20020003914A1. Автор: Yasutaka Sakata. Владелец: NEC Corp. Дата публикации: 2002-01-10.

Resin sealing type semiconductor device and method of manufacturing the same, and resin sealing type electronic device

Номер патента: US20100052124A1. Автор: Takeshi Sasaki,Masahiro Shindo. Владелец: Sanyo Semiconductor Co Ltd. Дата публикации: 2010-03-04.

Semiconductor storage device, manufacturing method of semiconductor storage device, and electronic device

Номер патента: US11737282B2. Автор: Masanori Tsukamoto. Владелец: Sony Semiconductor Solutions Corp. Дата публикации: 2023-08-22.

Semiconductor device and its manufacturing method

Номер патента: US20050012172A1. Автор: Kohji Kanamori. Владелец: Kohji Kanamori. Дата публикации: 2005-01-20.

Semiconductor device and manufacturing method thereof

Номер патента: US09899405B2. Автор: Yong Min Yoo,Young Jae Kim,Seung Woo Choi. Владелец: ASM IP Holding BV. Дата публикации: 2018-02-20.

Semiconductor device and manufacturing method thereof

Номер патента: US20220077289A1. Автор: Cheng Yeh HSU,Qu LUO. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2022-03-10.

Semiconductor device and manufacturing method thereof

Номер патента: US20160247814A1. Автор: Erh-Kun Lai,Kuang-Hao Chiang. Владелец: Macronix International Co Ltd. Дата публикации: 2016-08-25.

Semiconductor device and manufacturing method thereof

Номер патента: US09576972B2. Автор: Erh-Kun Lai,Kuang-Hao Chiang. Владелец: Macronix International Co Ltd. Дата публикации: 2017-02-21.

Semiconductor devices and methods of manufacturing the same

Номер патента: US20220223713A1. Автор: Satoru Yamada,Honglae PARK,Chunhyung Chung,Junsoo Kim,Naoto Umezawa. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-07-14.

Semiconductor devices and methods of manufacturing the same

Номер патента: US20210134975A1. Автор: Satoru Yamada,Honglae PARK,Chunhyung Chung,Junsoo Kim,Naoto Umezawa. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-05-06.

Power semiconductor device

Номер патента: EP2546879A3. Автор: Seung Bae HUR,Ki Se Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2013-12-11.

Semiconductor device with modulated field element isolated from gate electrode

Номер патента: US09647103B2. Автор: Michael Shur,Alexei Koudymov,Remigijus Gaska. Владелец: Sensor Electronic Technology Inc. Дата публикации: 2017-05-09.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US11469303B2. Автор: Makoto Utsumi,Masaki Miyazato. Владелец: Fuji Electric Co Ltd. Дата публикации: 2022-10-11.

Semiconductor device and manufacturing method of semiconductor device

Номер патента: US11837639B2. Автор: Kang Sik Choi. Владелец: SK hynix Inc. Дата публикации: 2023-12-05.

Semiconductor device and manufacturing method of semiconductor device

Номер патента: US20210043742A1. Автор: Kang Sik Choi. Владелец: SK hynix Inc. Дата публикации: 2021-02-11.

LC element manufacturing method

Номер патента: US5846845A. Автор: Takeshi Ikeda,Akira Okamoto,Tsutomu Nakanishi. Владелец: TIF Co Ltd. Дата публикации: 1998-12-08.

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Номер патента: TWI604592B. Автор: Tsutomu Shirakawa,Kenya Sano,Takuma Suzuki,Hirofumi FUJISAWA. Владелец: Toshiba Kk. Дата публикации: 2017-11-01.

Junction type field-effect semiconductor device and its manufacturing method

Номер патента: JPS55143076A. Автор: Tadahiko Tanaka,Takeshi Omukae. Владелец: Tokyo Sanyo Electric Co Ltd. Дата публикации: 1980-11-08.

Semiconductor device and its manufacturing method

Номер патента: TW328151B. Автор: Toru Tono. Владелец: Seiko Epson Corp. Дата публикации: 1998-03-11.

Semiconductor device and manufacturing method thereof

Номер патента: WO2024124388A1. Автор: Ke SHEN,Huaifeng Wang,Jiajie CUI,Meiyan Lin. Владелец: Innoscience (Zhuhai) Technology Co., Ltd.. Дата публикации: 2024-06-20.

Semiconductor device and manufacturing method thereof

Номер патента: WO2024113076A1. Автор: Sichao LI,Jianfa Zhang. Владелец: Innoscience (suzhou) Semiconductor Co., Ltd.. Дата публикации: 2024-06-06.

Semiconductor device and manufacturing method thereof

Номер патента: US20110073934A1. Автор: Shunpei Yamazaki,Tamae Takano,Tetsuya Kakehata. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2011-03-31.

Semiconductor device and manufacturing method thereof

Номер патента: US20110291173A1. Автор: Shunpei Yamazaki,Tamae Takano,Tetsuya Kakehata. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2011-12-01.

Thermal conductive device and manufacturing method thereof, electrical connector and electronic device

Номер патента: US20230012459A1. Автор: Xiaokai Wang,JunZe HU. Владелец: Shenzhenshi Yeboo Industrial Co Ltd. Дата публикации: 2023-01-12.

Thermal conductive device and manufacturing method thereof, electrical connector and electronic device

Номер патента: US20240147671A1. Автор: Xiaokai Wang,JunZe HU. Владелец: Shenzhenshi Yeboo Industrial Co Ltd. Дата публикации: 2024-05-02.

Antenna unit and manufacturing method thereof, display device, and electronic apparatus

Номер патента: US20240266723A1. Автор: Yang Zheng,Yanzhao Li,Hai Yu,Yafei Zhang,Feng Qu. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2024-08-08.

Semiconductor device and related manufacturing method

Номер патента: US09991082B2. Автор: Deyuan Xiao. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2018-06-05.

Semiconductor device and related manufacturing method

Номер патента: US09715987B2. Автор: Deyuan Xiao. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2017-07-25.

Storage battery electrode, manufacturing method thereof, storage battery, and electronic device

Номер патента: US09728770B2. Автор: Tatsuya IKENUMA. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2017-08-08.

Silicon-carbon composite material, preparation method thereof, electrochemical device and electronic apparatus

Номер патента: EP4439686A1. Автор: HUAYU Sun,Peng Huang,Ruonan LI,Zhonggui Sun. Владелец: AESC Japan Co Ltd. Дата публикации: 2024-10-02.

Silicon-carbon composite material, preparation method thereof, electrochemical device and electronic apparatus

Номер патента: US20240332502A1. Автор: HUAYU Sun,Peng Huang,Ruonan LI,Zhonggui Sun. Владелец: AESC Japan Co Ltd. Дата публикации: 2024-10-03.

Silicon-carbon composite material, preparation method thereof, electrochemical device and electronic apparatus

Номер патента: EP4439703A1. Автор: HUAYU Sun,Peng Huang,Ruonan LI,Zhonggui Sun. Владелец: AESC Japan Co Ltd. Дата публикации: 2024-10-02.

Silicon-carbon composite material, preparation method thereof, electrochemical device and electronic apparatus

Номер патента: US20240332518A1. Автор: HUAYU Sun,Peng Huang,Ruonan LI,Zhonggui Sun. Владелец: AESC Japan Co Ltd. Дата публикации: 2024-10-03.

Antenna, control method thereof, antenna array and electronic device

Номер патента: US20240266759A1. Автор: Lu Chen,Wei Zhao,Zixiang Lin,Yiming Wang,Zhifeng Zhang,Cuiwei TANG,Xiaoqiang Yang. Владелец: Beijing BOE Sensor Technology Co Ltd. Дата публикации: 2024-08-08.

Antenna unit and manufacturing method thereof, display device, and electronic apparatus

Номер патента: US12015198B2. Автор: Yang Zheng,Yanzhao Li,Hai Yu,Yafei Zhang,Feng Qu. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2024-06-18.

Composite material and preparation method thereof, electrochemical device, and electronic device

Номер патента: EP4361097A1. Автор: Zheng Yi,Yuansen XIE,Zigui Zheng,Fujin TAN. Владелец: Ningde Amperex Technology Ltd. Дата публикации: 2024-05-01.

Current collector, manufacturing method and equipment thereof, and current collector preform

Номер патента: US20240079603A1. Автор: Feng Liu,Yujie Chen,Xiaoming Ge. Владелец: Contemporary Amperex Technology Co Ltd. Дата публикации: 2024-03-07.

Through electrode, manufacturing method thereof, and semiconductor device and manufacturing method thereof

Номер патента: US09818645B2. Автор: Wei Feng,Katsuya Kikuchi,Naoya Watanabe,Masahiro Aoyagi,Tung Thanh BUI. Владелец: National Institute of Advanced Industrial Science and Technology AIST. Дата публикации: 2017-11-14.

Semiconductor device and manufacturing method thereof including a probe test step and a burn-in test step

Номер патента: US20020182796A1. Автор: Makoto Kitano,Kunio Matsumoto,Akihiko Ariga,Terutaka Mori,Hidetaka Shigi,Takayoshi Watanabe,Yuji Wada,Tetsuo Kumazawa,Susumu Kasukabe,Ryuji Kohno,Naoto Ban,Shuji Shibuya,Yasuhiro Motoyama. Владелец: Individual. Дата публикации: 2002-12-05.

Semiconductor device with air gaps between metal gates and method of forming the same

Номер патента: US12100625B2. Автор: Xusheng Wu,Chang-Miao Liu,Wei-Lun Min. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-24.

Cured product production method, laminate production method, semiconductor device manufacturing method, and processing liquid

Номер патента: EP4398289A1. Автор: Atsushi Nakamura,Naoki Sato,Atsuyasu Nozaki,Misaki TAKASHIMA. Владелец: Fujifilm Corp. Дата публикации: 2024-07-10.

Semiconductor device with reduced leakage current and fabricating method thereof

Номер патента: US09893107B2. Автор: Hsin-Chi Chen,Chia-Yu WEI,Chin-Hsun Hsiao,Yen-Liang Lin,Yung-Lung Hsu,Ssu-Chiang Weng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-02-13.

Semiconductor device and manufacturing method thereof

Номер патента: US09704747B2. Автор: Ji Yeon Ryu,Byong Jin Kim,Jae Beum Shim. Владелец: Amkor Technology Inc. Дата публикации: 2017-07-11.

Semiconductor device and manufacturing method thereof

Номер патента: US20240234637A1. Автор: Wen-Hsiung LU,Ming-Da Cheng,Mirng-Ji Lii,Chen-En Yen,Chin-Wei Kang,Cheng-Jen Lin,Chang-Jung Hsueh. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-11.

Semiconductor device and manufacturing method thereof

Номер патента: US20240186308A1. Автор: Ching-Hua Hsieh,Ming-Yu Yen,Hung-Chih Chen,Chin-Wei Liang,Kai-Fung Chang,Sheng-Feng Weng,Yi-Yang Lei,Hung-Chou LIAO,Cheyu LIU. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-06-06.

Semiconductor device and manufacturing method, and electronic apparatus

Номер патента: US20160225722A1. Автор: Takayoshi Honda. Владелец: Sony Corp. Дата публикации: 2016-08-04.

Semiconductor device and manufacturing method, and electronic apparatus

Номер патента: US09871000B2. Автор: Takayoshi Honda. Владелец: Sony Semiconductor Solutions Corp. Дата публикации: 2018-01-16.

Wafer flatness evaluation method, wafer flatness evaluation apparatus carrying out the evaluation method, wafer manufacturing method using the evaluation method, wafer quality assurance method using the evaluation method, semiconductor device manufacturing method using the evaluation method and semiconductor device manufacturing method using a wafer evaluated by the evaluation method

Номер патента: US20070177126A1. Автор: Makoto Kobayashi,Masashi Ichikawa,Kenichi Kodama,Soichi Inoue,Tadahito Fujisawa,Tsuneyuki Hagiwara. Владелец: Toshiba Corp. Дата публикации: 2007-08-02.

Wafer level fan out semiconductor device and manufacturing method thereof

Номер патента: US20240243084A1. Автор: Sang Gyu Lee,Sung Kyu Kim,Jong Sik Paek,Sang Won Kim,Choon Heung Lee,In Bae Park,Boo Yang Jung. Владелец: Amkor Technology Singapore Holding Pte Ltd. Дата публикации: 2024-07-18.

Semiconductor device having capacitor and manufacturing method thereof

Номер патента: US12087809B2. Автор: Wei Cheng Wu,Meng-Han LIN,Te-An Chen,Te-Hsin Chiu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-10.

Semiconductor device having capacitor and manufacturing method thereof

Номер патента: US20240347579A1. Автор: Wei Cheng Wu,Meng-Han LIN,Te-An Chen,Te-Hsin Chiu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-17.

Semiconductor device and manufacturing method thereof

Номер патента: US12132012B2. Автор: Hsin-Pin Huang,Nianwang YANG. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-10-29.

Wafer level fan out semiconductor device and manufacturing method thereof

Номер патента: US09748154B1. Автор: Sang Gyu Lee,Sung Kyu Kim,Jong Sik Paek,Sang Won Kim,Choon Heung Lee,In Bae Park,Boo Yang Jung. Владелец: Amkor Technology Inc. Дата публикации: 2017-08-29.

Adhesive film for use in semiconductor device manufacture, manufacturing method of said adhesive film, semiconductor device, and manufacturing method of semiconductor device

Номер патента: SG11202002552PA. Автор: Keisuke Ohkubo,Masanori Natsukawa. Владелец: Hitachi Chemical Co Ltd. Дата публикации: 2020-04-29.

Wafer flatness evaluation method, wafer flatness evaluation apparatus carrying out the evaluation method, wafer manufacturing method using the evaluation method, wafer quality assurance method using the evaluation method, semiconductor device manufacturing method using the evaluation method and semiconductor device manufacturing method using a wafer evaluated by the evaluation method

Номер патента: US7365830B2. Автор: Makoto Kobayashi,Masashi Ichikawa,Kenichi Kodama,Soichi Inoue,Tadahito Fujisawa,Tsuneyuki Hagiwara. Владелец: Shin Etsu Handotai Co Ltd. Дата публикации: 2008-04-29.

WAFER LEVEL PACKAGED GaN POWER DEVICE AND MANUFACTURING METHOD THEREOF

Номер патента: US20130309811A1. Автор: JU Chull Won. Владелец: Electronics and Telecommunications Research Institute ETRI. Дата публикации: 2013-11-21.

Wafer-level semiconductor device and manufacturing method thereof

Номер патента: US09780276B2. Автор: Yibin Zhang,Fei Xu,Yong Cai. Владелец: Suzhou Institute of Nano Tech and Nano Bionics of CAS. Дата публикации: 2017-10-03.

Semiconductor package and manufacturing method thereof

Номер патента: US09691708B1. Автор: Hao-Yi Tsai,Chih-Wei Lin,Yu-feng Chen,Chih-Hua Chen,Yu-Jen Cheng,Yu-Chih Huang,Chih-Hsuan Tai. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-06-27.

Dual-gate CMOS semiconductor device and dual-gate CMOS semiconductor device manufacturing method

Номер патента: US20030203561A1. Автор: Hiroyuki Tanaka. Владелец: Individual. Дата публикации: 2003-10-30.

Dual-gate CMOS semiconductor device and dual-gate CMOS semiconductor device manufacturing method

Номер патента: US20020027252A1. Автор: Hiroyuki Tanaka. Владелец: Oki Electric Industry Co Ltd. Дата публикации: 2002-03-07.

Semiconductor device and manufacturing method thereof

Номер патента: US20240276706A1. Автор: Hung-Yu Wei. Владелец: Winbond Electronics Corp. Дата публикации: 2024-08-15.

Semiconductor component, package structure and manufacturing method thereof

Номер патента: US20200294984A1. Автор: Ming-Fa Chen,Hsien-Wei Chen,Sung-Feng Yeh,Chi-Hwang Tai. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-09-17.

Semiconductor device and manufacturing method thereof

Номер патента: US09524906B1. Автор: Glenn A. Rinne,Jong Sik Paek,Won Chul Do,Eun Sook Sohn,In Bae Park. Владелец: Amkor Technology Inc. Дата публикации: 2016-12-20.

Semiconductor device and manufacturing method thereof

Номер патента: US20200259082A1. Автор: Tianhui Li,Qiang Ma,Yanlei Ping. Владелец: SiEn Qingdao Integrated Circuits Co Ltd. Дата публикации: 2020-08-13.

Semiconductor device and manufacturing method thereof

Номер патента: US11011703B2. Автор: Tianhui Li,Qiang Ma,Yanlei Ping. Владелец: SiEn Qingdao Integrated Circuits Co Ltd. Дата публикации: 2021-05-18.

Manufacturing method of semiconductor device

Номер патента: US10347644B2. Автор: Chieh-Te Chen,Feng-Yi Chang,Fu-Che Lee. Владелец: Fujian Jinhua Integrated Circuit Co Ltd. Дата публикации: 2019-07-09.

Semiconductor device and manufacturing method thereof

Номер патента: US20240266321A1. Автор: Dong Jin Kim,Do Hyung Kim,Jin Han Kim,Glenn Rinne,Yeong Beom Ko. Владелец: Amkor Technology Singapore Holding Pte Ltd. Дата публикации: 2024-08-08.

Three-dimensional semiconductor device and manufacturing method thereof

Номер патента: US9711525B2. Автор: Min Sik Jang. Владелец: SK hynix Inc. Дата публикации: 2017-07-18.

Semiconductor package and manufacturing method thereof

Номер патента: US20240321780A1. Автор: Chung-Shi Liu,Hao-Yi Tsai,Chih-Hao Chang,Shih-Wei Chen,Po-Chun Lin,Chia-Hung Liu,Yu-Chih Huang,Chun-Ti LU,Zheng-Gang Tsai. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-26.

Three-dimensional semiconductor device and manufacturing method thereof

Номер патента: US09711525B2. Автор: Min Sik Jang. Владелец: SK hynix Inc. Дата публикации: 2017-07-18.

Semiconductor device and manufacturing method thereof

Номер патента: US09633944B2. Автор: Hae Soo Kim. Владелец: SK hynix Inc. Дата публикации: 2017-04-25.

Semiconductor manufacturing device and semiconductor manufacturing method

Номер патента: US09458535B2. Автор: Takeshi Watanabe,Takashi Imoto,Soichi Homma,Yuusuke Takano,Katsunori Shibuya. Владелец: Toshiba Corp. Дата публикации: 2016-10-04.

Semiconductor device and manufacturing method of the semiconductor device

Номер патента: US20230301096A1. Автор: Sang Soo Kim,Kun Young Lee,Nam Kuk KIM,Sang Wan JIN. Владелец: SK hynix Inc. Дата публикации: 2023-09-21.

Mount tape having an inner support layer between adhesive layers for semiconductor device assembly

Номер патента: US20240063047A1. Автор: Brandon P. Wirz,Youngrae Kim,Sui Chi Huang. Владелец: Micron Technology Inc. Дата публикации: 2024-02-22.

Semiconductor device and manufacturing method thereof

Номер патента: US09837459B2. Автор: Keiichiro Kashihara. Владелец: Renesas Electronics Corp. Дата публикации: 2017-12-05.

Substrate structure, semiconductor device, and method for manufacturing the same

Номер патента: US09607877B2. Автор: Huicai Zhong,Qingqing Liang. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2017-03-28.

Semiconductor device and manufacturing method thereof

Номер патента: US09437639B2. Автор: Keiichiro Kashihara. Владелец: Renesas Electronics Corp. Дата публикации: 2016-09-06.

Semiconductor device and method of manufacturing thereof

Номер патента: US10157872B2. Автор: Greg Hames,Glenn Rinne,Devarajan Balaraman. Владелец: Amkor Technology Inc. Дата публикации: 2018-12-18.

Semiconductor device and manufacturing method thereof

Номер патента: US20180197865A1. Автор: Li-Wei Feng,Chien-Ting Ho,Tzu-Tsen Liu. Владелец: Fujian Jinhua Integrated Circuit Co Ltd. Дата публикации: 2018-07-12.

Semiconductor device and manufacturing method thereof, memory and memory system

Номер патента: US20240194607A1. Автор: Wei Xu,BIN Yuan,Zongke Xu,Zongliang Huo,Lei Xue,Yali Guo,Qiangwei Zhang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-06-13.

Memory device, semiconductor device and method for manufacturing the same

Номер патента: US20210183820A1. Автор: Chih-Wei Chang. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2021-06-17.

Semiconductor device for avoiding short circuit between adjacent storage nodes and manufacturing method thereof

Номер патента: US10431587B2. Автор: Li-Wei Feng,Chien-Ting Ho,Tzu-Tsen Liu. Владелец: Fujian Jinhua Integrated Circuit Co Ltd. Дата публикации: 2019-10-01.

Semiconductor device and manufacturing method thereof

Номер патента: US20050116272A1. Автор: Takashi Nishida,Masahito Hiroshima. Владелец: Elpida Memory Inc. Дата публикации: 2005-06-02.

Semiconductor device and manufacturing method thereof

Номер патента: US20070172746A1. Автор: Takashi Nishida,Masahito Hiroshima. Владелец: Elpida Memory Inc. Дата публикации: 2007-07-26.

Semiconductor device and manufacturing method thereof

Номер патента: US7208788B2. Автор: Takashi Nishida,Masahito Hiroshima. Владелец: Elpida Memory Inc. Дата публикации: 2007-04-24.

Semiconductor package including antenna substrate and manufacturing method thereof

Номер патента: US20230299462A1. Автор: Han-Chee Yen. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2023-09-21.

Manufacturing method for semiconductor device

Номер патента: US20010036685A1. Автор: Michiyoshi Takano. Владелец: Seiko Epson Corp. Дата публикации: 2001-11-01.

Semiconductor device with polymer liner and method for fabricating the same

Номер патента: US20240234249A1. Автор: Shing-Yih Shih. Владелец: Nanya Technology Corp. Дата публикации: 2024-07-11.

Semiconductor device with polymer liner and method for fabricating the same

Номер патента: US20240234252A1. Автор: Shing-Yih Shih. Владелец: Nanya Technology Corp. Дата публикации: 2024-07-11.

Semiconductor package and manufacturing method thereof

Номер патента: US12113044B2. Автор: Chin-Li Kao,An-Hsuan HSU,Shan-Bo WANG. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2024-10-08.

Packaged Semiconductor Devices, Methods of Packaging Semiconductor Devices, and PoP Devices

Номер патента: US20150050779A1. Автор: Jing-Cheng Lin,Po-Hao Tsai,Jui-Pin Hung. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2015-02-19.

Manufacturing method of semiconductor device

Номер патента: US20190341385A1. Автор: Li-Wei Feng,Chien-Ting Ho,Tzu-Tsen Liu. Владелец: Fujian Jinhua Integrated Circuit Co Ltd. Дата публикации: 2019-11-07.

Substrate sheet material for a semiconductor device and a manufacturing method thereof, a molding method using a substrate sheet material, a manufacturing method of semiconductor devices

Номер патента: TWI264782B. Автор: Toru Nishino,Noboru Hayasaka,Kouichi Meguro. Владелец: Fujitsu Ltd. Дата публикации: 2006-10-21.

Semiconductor device with an embedded active device

Номер патента: EP4454015A1. Автор: Rahul Agarwal,Gabriel H. Loh,Brett P. Wilkerson,Raja Swaminathan. Владелец: Advanced Micro Devices Inc. Дата публикации: 2024-10-30.

Manufacturing method of semiconductor device and semiconductor device corresponding to loop back test

Номер патента: US20070245179A1. Автор: Hiroshi Noda. Владелец: Renesas Technology Corp. Дата публикации: 2007-10-18.

Semiconductor substrate, semiconductor device and manufacturing method of semiconductor substrate

Номер патента: US20160315220A1. Автор: Kai Cheng. Владелец: Enkris Semiconductor Inc. Дата публикации: 2016-10-27.

Semiconductor device and oxygen removal method thereof

Номер патента: US20220384215A1. Автор: Min Zuo. Владелец: Individual. Дата публикации: 2022-12-01.

Semiconductor manufacturing method including forming additional active layer

Номер патента: US20040185609A1. Автор: Shuichi Ueno,Haruo Furuta,Yoshinori Okumura. Владелец: Renesas Technology Corp. Дата публикации: 2004-09-23.

Manufacturing method of semiconductor device and semiconductor device thereof

Номер патента: US09837376B2. Автор: Dong Jin Kim,Do Hyung Kim,Jin Han Kim,Glenn Rinne,Yeong Beom Ko. Владелец: Amkor Technology Inc. Дата публикации: 2017-12-05.

Manufacturing method of semiconductor device and semiconductor device thereof

Номер патента: US09490231B2. Автор: Dong Jin Kim,Do Hyung Kim,Jin Han Kim,Glenn Rinne,Yeong Beom Ko. Владелец: Amkor Technology Inc. Дата публикации: 2016-11-08.

Display panel, maufacturing method thereof, and electronic device

Номер патента: US20210327956A1. Автор: Ze YUAN,Yu-Min Wang,Jiahao KANG. Владелец: Shenzhen Royole Technologies Co Ltd. Дата публикации: 2021-10-21.

Semiconductor wafer, semiconductor device and method of manufacturing the same, circuit board, and electronic device

Номер патента: US20030052410A1. Автор: Yoshihiro Sugiura. Владелец: Seiko Epson Corp. Дата публикации: 2003-03-20.

Face-to-face semiconductor device with fan-out porch

Номер патента: US12051684B2. Автор: Jong Sik Paek,Yeongbeom Ko. Владелец: Micron Technology Inc. Дата публикации: 2024-07-30.

Wafer-level package device with solder bump reinforcement

Номер патента: US09425160B1. Автор: Arkadii V. Samoilov,Reynante Alvarado,Yi-Sheng A. Sun,Yong L. Xu. Владелец: Maxim Integrated Products Inc. Дата публикации: 2016-08-23.

Anodic aluminum oxide film-based interposer for electrical connection and manufacturing method therefor, semiconductor package and manufacturing method therefor, multi-stacked semiconductor device and manufacturing method therefor, display and manufacturing method therefor

Номер патента: US20240112968A1. Автор: Seung Ho Park,Bum Mo Ahn,Sung Hyun BYUN. Владелец: Point Engineering Co Ltd. Дата публикации: 2024-04-04.

Esd protection device with reduced harmonic distortion background

Номер патента: EP3971972A1. Автор: Joost Adriaan Willemen,Egle Tylaite. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2022-03-23.

Semiconductor device and manufacturing method of the semiconductor device

Номер патента: US20230301091A1. Автор: SUNG Wook Jung,Ji Hui Baek,Jang Hee Jung. Владелец: SK hynix Inc. Дата публикации: 2023-09-21.

Semiconductor device and manufacturing method therefor

Номер патента: US20200006372A1. Автор: Feng Ji,Haoyu Chen,Qiwei Wang,Jinshuang Zhang. Владелец: Shanghai Huali Microelectronics Corp. Дата публикации: 2020-01-02.

Atomic layer deposition bonding layer for joining two semiconductor devices

Номер патента: US12094849B2. Автор: Chyi-Tsong Ni,Kuang-Wei Cheng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-17.

Atomic layer deposition bonding layer for joining two semiconductor devices

Номер патента: US20240363578A1. Автор: Chyi-Tsong Ni,Kuang-Wei Cheng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-31.

Reinforcing sheet and method for producing secondary mounted semiconductor device

Номер патента: US20160042986A1. Автор: Kosuke Morita,Naohide Takamoto,Hiroyuki Senzai. Владелец: Nitto Denko Corp. Дата публикации: 2016-02-11.

Through electrode, manufacturing method thereof, and semiconductor device and manufacturing method thereof

Номер патента: US20170200644A1. Автор: Wei Feng,Katsuya Kikuchi,Naoya Watanabe,Masahiro Aoyagi,Tung Thanh BUI. Владелец: National Institute of Advanced Industrial Science and Technology AIST. Дата публикации: 2017-07-13.

Reinforcing sheet and method for producing secondary mounted semiconductor device

Номер патента: US9472439B2. Автор: Kosuke Morita,Naohide Takamoto,Hiroyuki Senzai. Владелец: Nitto Denko Corp. Дата публикации: 2016-10-18.

Aggregation of semiconductor devices and the method thereof

Номер патента: US09881907B2. Автор: Chun-Chang Chen,Hsu-Cheng Lin,Ching-Yi Chiu,Pei-Shan Fang. Владелец: Epistar Corp. Дата публикации: 2018-01-30.

Through electrode, manufacturing method thereof, and semiconductor device and manufacturing method thereof

Номер патента: US9984956B2. Автор: Katsuya Kikuchi,Naoya Watanabe,Masahiro Aoyagi,Fumiki Kato,Tung Thanh BUI. Владелец: National Institute of Advanced Industrial Science and Technology AIST. Дата публикации: 2018-05-29.

Through electrode, manufacturing method thereof, and semiconductor device and manufacturing method thereof

Номер патента: US20160322282A1. Автор: Katsuya Kikuchi,Naoya Watanabe,Masahiro Aoyagi,Fumiki Kato,Tung Thanh BUI. Владелец: National Institute of Advanced Industrial Science and Technology AIST. Дата публикации: 2016-11-03.

Substrate for semiconductor device, method of manufacturing substrate for semiconductor device, substrate for electro-optical device, electro-optical device, and electronic apparatus

Номер патента: TW200607077A. Автор: Minoru Moriwaki. Владелец: Seiko Epson Corp. Дата публикации: 2006-02-16.

Semiconductor devices, methods of manufacture thereof, and inter-metal dielectric (IMD) structures

Номер патента: US09941214B2. Автор: Kuang-Yuan Hsu,Yu-Yun Peng,Keng-Chu Lin,Joung-Wei Liou. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-04-10.

SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, DISPLAY DEVICE, AND ELECTRONIC DEVICE

Номер патента: US20180122336A1. Автор: KUROKAWA Yoshiyuki,KUNITAKE Hitoshi. Владелец: . Дата публикации: 2018-05-03.

Semiconductor device with air gaps between metal gates and method of forming the same

Номер патента: US11756835B2. Автор: Xusheng Wu,Chang-Miao Liu,Wei-Lun Min. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-09-12.

Semiconductor Device With Air Gaps Between Metal Gates And Method Of Forming The Same

Номер патента: US20230369128A1. Автор: Xusheng Wu,Chang-Miao Liu,Wei-Lun Min. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-16.

Semiconductor Device With Air Gaps Between Metal Gates And Method Of Forming The Same

Номер патента: US20220344216A1. Автор: Xusheng Wu,Chang-Miao Liu,Wei-Lun Min. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-10-27.

Systems and methods for a semiconductor structure having multiple semiconductor-device layers

Номер патента: US09646872B2. Автор: Clement Hsingjen Wann,Chun-Hsiung Tsai,Yi-Tang LIN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-05-09.

Semiconductor device package with stress reduction design

Номер патента: US20240243076A1. Автор: Shin-puu Jeng,Po-Yao Lin,Po-Chen LAI,Shu-Shen Yeh,Chin-Hua Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-18.

Semiconductor device

Номер патента: US20070284707A1. Автор: Fumihiko Ooka,Masahiko Sugihara. Владелец: Oki Electric Industry Co Ltd. Дата публикации: 2007-12-13.

Semiconductor device package and method of making the same

Номер патента: US09564393B1. Автор: Chi-Tsung Chiu,Kuo-Hua Chen,Chih-Yi Huang. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2017-02-07.

Wafer-level encapsulated semiconductor device, and method for fabricating same

Номер патента: US09450004B2. Автор: Wei-Feng Lin,Chih-Hung Tu. Владелец: Omnivision Technologies Inc. Дата публикации: 2016-09-20.

Semiconductor device, semiconductor device manufacturing method, electronic component, circuit board, and electronic apparatus

Номер патента: JP4311376B2. Автор: 伸晃 橋元,春樹 伊東. Владелец: Seiko Epson Corp. Дата публикации: 2009-08-12.

Semiconductor device and manufacture thereof

Номер патента: US20180152801A1. Автор: Yu Hua,Chao Wang,Yijun Chen,Shan ZHANG,Kuanchieh YU. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2018-05-31.

Semiconductor device measurement method

Номер патента: US20220077004A1. Автор: Hongxiang Li. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2022-03-10.

Methods of forming a semiconductor cell array region, method of forming a semiconductor device including the semiconductor cell array region, and method of forming a semiconductor module including the semiconductor device

Номер патента: US20110177671A1. Автор: Yong-Hoon Son,Byeong-Chan Lee,Sun-Ghil Lee,Sung-Woo Hyun. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2011-07-21.

Semiconductor device and its manufacturing method, circuit board, and electronic apparatus

Номер патента: TW200535982A. Автор: Ikuya Miyazawa. Владелец: Seiko Epson Corp. Дата публикации: 2005-11-01.

Semiconductor device and manufacture thereof

Номер патента: US20200145771A1. Автор: Yu Hua,Chao Wang,Yijun Chen,Shan ZHANG,Kuanchieh YU. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2020-05-07.

Mounting structure and method of mounting semiconductor device

Номер патента: US20010040791A1. Автор: Fumio Mori. Владелец: Individual. Дата публикации: 2001-11-15.

Vertically mountable semiconductor device and methods

Номер патента: US20020031857A1. Автор: Larry Kinsman. Владелец: Individual. Дата публикации: 2002-03-14.

Method and system for creating self-aligned twin wells with co-planar surfaces in a semiconductor device

Номер патента: US20080166862A1. Автор: Gayle W. Miller,Bryan D. Sendelweck. Владелец: Individual. Дата публикации: 2008-07-10.

Semiconductor device and method of manufacturing the same

Номер патента: US09818737B2. Автор: Hyun Ho LEE. Владелец: SK hynix Inc. Дата публикации: 2017-11-14.

Semiconductor device and manufacturing method thereof

Номер патента: US20220310617A1. Автор: Tong Wu. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2022-09-29.

Semiconductor device and manufacturing method thereof

Номер патента: US20200365488A1. Автор: Chen-Hua Yu,Kuo-Chung Yee. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-11-19.

Reduced susceptibility to electrostatic discharge during 3d semiconductor device bonding and assembly

Номер патента: US20130127046A1. Автор: Shiqun Gu,Dong Wook Kim,Reza Jalilizeinali,Brian M. Henderson,Ronnie A. Lindley,Matthiew M. Nowak. Владелец: Qualcomm Inc. Дата публикации: 2013-05-23.

Semiconductor device packages and manufacturing method thereof

Номер патента: TWI376779B. Автор: Seokbong Kim,Yeonsun Yun,Yuyong Lee. Владелец: Advanced Semiconductor Eng. Дата публикации: 2012-11-11.

Semiconductor device and the manufacturing method thereof

Номер патента: TWI238441B. Автор: Katsuhiko Hieda. Владелец: Toshiba Corp. Дата публикации: 2005-08-21.

Semiconductor device and the manufacturing method thereof

Номер патента: TW449818B. Автор: Shoji Seta. Владелец: Toshiba Corp. Дата публикации: 2001-08-11.

Semiconductor device assembly with heat transfer structure formed from semiconductor material

Номер патента: US20190348401A1. Автор: James M. Derderian,Jaspreet S. Gandhi,Sameer S. Vadhavkar. Владелец: Micron Technology Inc. Дата публикации: 2019-11-14.

Semiconductor device assembly with heat transfer structure formed from semiconductor material

Номер патента: US10297577B2. Автор: James M. Derderian,Jaspreet S. Gandhi,Sameer S. Vadhavkar. Владелец: Micron Technology Inc. Дата публикации: 2019-05-21.

Semiconductor device assembly with heat transfer structure formed from semiconductor material

Номер патента: US20190229096A1. Автор: James M. Derderian,Jaspreet S. Gandhi,Sameer S. Vadhavkar. Владелец: Micron Technology Inc. Дата публикации: 2019-07-25.

Semiconductor device and the manufacturing method thereof

Номер патента: TW447114B. Автор: Hiroshi Miki,Kazunari Torii,Yoshihisa Fujisaki. Владелец: HITACHI LTD. Дата публикации: 2001-07-21.

Semiconductor device and the manufacture method thereof, circuit board and the electronic machine

Номер патента: TW404027B. Автор: Nobuaki Hashimoto. Владелец: Seiko Epson Corp. Дата публикации: 2000-09-01.

Semiconductor device and the manufacturing method thereof

Номер патента: TWI251254B. Автор: Akiyoshi Mutou. Владелец: Sharp Kk. Дата публикации: 2006-03-11.

Improved bonding structures for semiconductor devices and methods of forming the same

Номер патента: US20240321817A1. Автор: Chin-Fu Kao,Amram Eitan,Kai-Hsiang Yang,Ju-Pin Sun. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-26.

Method and system for testing indirect bandgap semiconductor devices using luminescence imaging

Номер патента: US09912291B2. Автор: Thorsten Trupke,Robert Andrew Bardos. Владелец: BT IMAGING PTY LTD. Дата публикации: 2018-03-06.

Semiconductor device assembly with heat transfer structure formed from semiconductor material

Номер патента: US09768149B2. Автор: James M. Derderian,Jaspreet S. Gandhi,Sameer S. Vadhavkar. Владелец: Micron Technology Inc. Дата публикации: 2017-09-19.

Package including a plurality of stacked semiconductor devices including a capacitance enhanced through via and method of manufacture

Номер патента: US09685427B1. Автор: Darryl G. Walker. Владелец: Individual. Дата публикации: 2017-06-20.

Semiconductor device and manufacturing method therefor

Номер патента: US09553060B2. Автор: Kazuyuki Omori. Владелец: Renesas Electronics Corp. Дата публикации: 2017-01-24.

Stacked semiconductor devices and methods of forming same

Номер патента: US09496189B2. Автор: Chen-Hua Yu,Chien-Hsun Lee,Tsung-Ding Wang,Jung Wei Cheng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-11-15.

Method and system for testing indirect bandgap semiconductor devices using luminescence imaging

Номер патента: US09482625B2. Автор: Thorsten Trupke,Robert Andrew Bardos. Владелец: BT IMAGING PTY LTD. Дата публикации: 2016-11-01.

Semiconductor device with reduced power consumption and operation method thereof, electronic component, and electronic device

Номер патента: US10930323B2. Автор: Toshihiko Saito,Takahiko Ishizu. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2021-02-23.

Semiconductor device and manufacturing method thereof

Номер патента: US20100108979A1. Автор: Byung-Ho Lee. Владелец: Dongbu HitekCo Ltd. Дата публикации: 2010-05-06.

Semiconductor device and manufacturing method thereof

Номер патента: US11569419B2. Автор: Wen-Hsiung LU,Ming-Da Cheng,Mirng-Ji Lii,Chen-En Yen,Chin-Wei Kang,Cheng-Jen Lin,Chang-Jung Hsueh. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-01-31.

Semiconductor device and manufacturing method thereof

Номер патента: US11961944B2. Автор: Wen-Hsiung LU,Ming-Da Cheng,Mirng-Ji Lii,Chen-En Yen,Chin-Wei Kang,Cheng-Jen Lin,Chang-Jung Hsueh. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-04-16.

Semiconductor device and manufacturing method thereof

Номер патента: US20220140197A1. Автор: Wen-Hsiung LU,Ming-Da Cheng,Mirng-Ji Lii,Chen-En Yen,Chin-Wei Kang,Cheng-Jen Lin,Chang-Jung Hsueh. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-05-05.

Semiconductor device package

Номер патента: US20070096343A1. Автор: Dong Kim,Jin Park,Young Yoon. Владелец: Samsung Electro Mechanics Co Ltd. Дата публикации: 2007-05-03.

Semiconductor device package

Номер патента: US7629685B2. Автор: Dong Jin Kim,Jin Woo Park,Young Bok Yoon. Владелец: Samsung Electro Mechanics Co Ltd. Дата публикации: 2009-12-08.

Semiconductor Device and Method for Manufacturing Semiconductor Device

Номер патента: US20110260165A1. Автор: Hideto Ohnuma. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2011-10-27.

Optical semiconductor device and method of manufacturing thereof

Номер патента: EP1812972A1. Автор: Yoshitsugu Dow Corning Toray Co. Ltd. MORITA,Tomoko Dow Corning Toray Co. Ltd. KATO. Владелец: Dow Corning Toray Co Ltd. Дата публикации: 2007-08-01.

Semiconductor device and its manufacturing method, a circuit board and an electronic device

Номер патента: US20030218260A1. Автор: Jun Taniguchi. Владелец: Seiko Epson Corp. Дата публикации: 2003-11-27.

Substrate for semiconductor device and method of manufacturing the same

Номер патента: US20020177328A1. Автор: Kimihiro Sasaki,Tomonobu Hata,Akira Kamisawa. Владелец: ROHM CO LTD. Дата публикации: 2002-11-28.

Semiconductor device and semiconductor package including same

Номер патента: US20240213200A1. Автор: Reona Takeoka. Владелец: ROHM CO LTD. Дата публикации: 2024-06-27.

Semiconductor device and method of manufacture

Номер патента: US12136609B2. Автор: Tze-Chiang HUANG,Haohua Zhou,Mei Hsu Wong. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-11-05.

Flexible wiring board, film carrier, tape-like semiconductor device, semiconductor device and manufacturing method thereof, circuit board, and electronic device

Номер патента: JP3624792B2. Автор: 雅彦 柳沢. Владелец: Seiko Epson Corp. Дата публикации: 2005-03-02.

Wafer level fan out semiconductor device and manufacturing method thereof

Номер патента: US11855023B2. Автор: Sang Gyu Lee,Sung Kyu Kim,Jong Sik Paek,Sang Won Kim,Choon Heung Lee,In Bae Park,Boo Yang Jung. Владелец: Amkor Technology Singapore Holding Pte Ltd. Дата публикации: 2023-12-26.

Semiconductor device and manufacturing method thereof

Номер патента: US20150228682A1. Автор: Keiichiro Kashihara. Владелец: Renesas Electronics Corp. Дата публикации: 2015-08-13.

Semiconductor device and manufacturing method thereof

Номер патента: US20150380360A1. Автор: Keiichiro Kashihara. Владелец: Renesas Electronics Corp. Дата публикации: 2015-12-31.

Semiconductor device and manufacturing method thereof

Номер патента: US9048355B2. Автор: Keiichiro Kashihara. Владелец: Renesas Electronics Corp. Дата публикации: 2015-06-02.

Semiconductor device, electronic device including the same and manufacturing methods thereof

Номер патента: US20150162247A1. Автор: Myeongcheol Kim,Yong-Joon Choi,Cheol Kim,Geumjung Seong,Hak-sun Lee,Ji-Eun Han,Haegeon JUNG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2015-06-11.

Wafer level fan out semiconductor device and manufacturing method thereof

Номер патента: US20170323862A1. Автор: Sang Gyu Lee,Sung Kyu Kim,Jong Sik Paek,Sang Won Kim,Choon Heung Lee,In Bae Park,Boo Yang Jung. Владелец: Amkor Technology Inc. Дата публикации: 2017-11-09.

Adhesive composition for producing semiconductor device, and adhesive sheet for producing semiconductor device

Номер патента: US20110190421A1. Автор: Yasushi Inoue,Takeshi Matsumura,Kenji Oonishi,Yuichiro Shishido,Yuta Kimura. Владелец: Nitto Denko Corp. Дата публикации: 2011-08-04.

Semiconductor device and method for controlling a semiconductor device

Номер патента: US20080122517A1. Автор: Joachim Pichler,Maria Giovanna Lagioia. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2008-05-29.

Method for improving a drive current for semiconductor devices on a wafer-by-wafer basis

Номер патента: US20060035394A1. Автор: Yuqing Xu,James Vaughan,James Friedmann,Jeffrey Loewecke,Kaneez Banu. Владелец: Texas Instruments Inc. Дата публикации: 2006-02-16.

Structures and methods for dicing semiconductor devices

Номер патента: US20230290684A1. Автор: Raj K. Bansal,Youngik Kwon,Radhakrishna Kotti,Po Chih Yang,Venkateswarlu Bhavanasi,Wei Chang Wong. Владелец: Micron Technology Inc. Дата публикации: 2023-09-14.

Semiconductor device and method of manufacturing the same

Номер патента: US20020102832A1. Автор: Eiji Watanabe,Katsumi Miyata,Hiroyuki Yoda. Владелец: Fujitsu Ltd. Дата публикации: 2002-08-01.

Stacked layer type semiconductor device and its manufacturing method

Номер патента: US20040130017A1. Автор: Takakazu Fukumoto. Владелец: Renesas Technology Corp. Дата публикации: 2004-07-08.

Method for positioning semiconductor devices and corresponding positioning apparatus

Номер патента: EP4439078A1. Автор: Giuliano FILPI,Fabrice Coste,Pedro Jr Santos PERALTA,Alex GRIMA,Moise AVOCI UGWIRI. Владелец: STMicroelectronics International NV. Дата публикации: 2024-10-02.

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Номер патента: US09691739B2. Автор: Takashi Akazawa,Yasuhiro Yoshimura,Michihiro Kawashita,Takahiro Naito,Naotaka Tanaka. Владелец: Tessera Advanced Technologies Inc. Дата публикации: 2017-06-27.

Semiconductor device including a resistor metallic layer and method of forming the same

Номер патента: US09673192B1. Автор: Douglas Dean Lopata,Jeffrey Demski,Jay Norton,Miguel Rojas-Gonzales. Владелец: Altera Corp. Дата публикации: 2017-06-06.

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Номер патента: US09659900B2. Автор: Arkadii V. Samoilov,Xuejun Ying,Peter Mcnally,Tyler Parent. Владелец: Maxim Integrated Products Inc. Дата публикации: 2017-05-23.

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Номер патента: US09508622B2. Автор: Leo M. Higgins, III. Владелец: FREESCALE SEMICONDUCTOR INC. Дата публикации: 2016-11-29.

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Номер патента: US09379001B2. Автор: Dong-Hyun Kim,Yongchul Oh,Yonggyu Choi,Kichul NAM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-06-28.

Nitride semiconductor device having a silicon-containing layer and manufacturing method thereof

Номер патента: US8163576B2. Автор: Yuji Abe,Hitoshi Sakuma,Kyozo Kanamoto,Katsuomi Shiozawa,Kazushige Kawasaki. Владелец: Mitsubishi Electric Corp. Дата публикации: 2012-04-24.

Wafer-level semiconductor device and manufacturing method thereof

Номер патента: US20160336500A1. Автор: Yibin Zhang,Fei Xu,Yong Cai. Владелец: Suzhou Institute of Nano Tech and Nano Bionics of CAS. Дата публикации: 2016-11-17.

Dual crystal orientation for semiconductor devices

Номер патента: US20230290689A1. Автор: Chih-Hao Wang,Kuo-Cheng Chiang,Kuan-Lun Cheng,Ching-Wei Tsai. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-09-14.

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Номер патента: US20180138138A1. Автор: Greg Hames,Glenn Rinne,Devarajan Balaraman. Владелец: Amkor Technology Inc. Дата публикации: 2018-05-17.

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Номер патента: US20180323161A1. Автор: Greg Hames,Glenn Rinne,Devarajan Balaraman. Владелец: Amkor Technology Inc. Дата публикации: 2018-11-08.

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Номер патента: EP4044432A4. Автор: Wei Pang,Qingrui YANG,Menglun ZHANG. Владелец: TIANJIN UNIVERSITY. Дата публикации: 2022-11-30.

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Номер патента: US20240120261A1. Автор: Koshun SAITO,Daichi NIWA,Yuki Seta. Владелец: ROHM CO LTD. Дата публикации: 2024-04-11.

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Номер патента: US20240297196A1. Автор: Yuriko YAMANO. Владелец: Sony Semiconductor Solutions Corp. Дата публикации: 2024-09-05.

Semiconductor device and preparation method therefor, and power amplification circuit and electronic device

Номер патента: EP4394890A4. Автор: Tao Liu,Ming Lu,Haijun Li,Zhili Zhang,Jin Rao,Shuiming LI. Владелец: Huawei Technologies Co Ltd. Дата публикации: 2024-10-16.

PECVD protective layers for semiconductor devices

Номер патента: US09761439B2. Автор: Zoltan Ring,Daniel Namishia,Sei-Hyung Ryu. Владелец: Cree Inc. Дата публикации: 2017-09-12.

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Номер патента: US20220149093A1. Автор: Kudoh Yoshiharu,Kataoka Toyotaka,KIMIZUKA Naohiko. Владелец: SONY SEMICONDUCTOR SOLUTIONS CORPORATION. Дата публикации: 2022-05-12.

Semiconductor device and manufacturing method thereof, electronic module, and electronic apparatus

Номер патента: JP3722223B2. Автор: 達大 漆戸. Владелец: Seiko Epson Corp. Дата публикации: 2005-11-30.

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Номер патента: RU2198949C2. Автор: Казутака ОКАМОТО,Йасуо КОНДО,Теруйоси АБЕ,Йасухиса АОНО,Дзунйа КАНЕДА,Риуити САИТО,Йосихико КОИКЕ. Владелец: Хитачи, Лтд.. Дата публикации: 2003-02-20.

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Номер патента: US20230170223A1. Автор: Yang Wu,FAN YANG,Sheng Hu,Daohong YANG,Liliang GU. Владелец: Wuhan Xinxin Semiconductor Manufacturing Co Ltd. Дата публикации: 2023-06-01.

Signal path and method of manufacturing a multiple-patterned semiconductor device

Номер патента: US20140189615A1. Автор: Douglas M. Dewanz,David P. Paulsen,II John E. Sheets,David H. Allen. Владелец: International Business Machines Corp. Дата публикации: 2014-07-03.

Signal path and method of manufacturing a multiple-patterned semiconductor device

Номер патента: US20140183603A1. Автор: Douglas M. Dewanz,David P. Paulsen,II John E. Sheets,David H. Allen. Владелец: International Business Machines Corp. Дата публикации: 2014-07-03.

Method for fabricating semiconductor device

Номер патента: US20220310626A1. Автор: Zhongming Liu,Longyang Chen,Hongfa Wu. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2022-09-29.

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Номер патента: TW201209983A. Автор: Hwee-Seng Jimmy Chew,Shoa-Siong Raymond Lim,Kian-Hock Lim,Oviso Dominador Fortaleza Jr. Владелец: ADVANPACK SOLUTIONS PTE LTD. Дата публикации: 2012-03-01.

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Номер патента: US09991232B2. Автор: Yu-Ming Chen. Владелец: Winbond Electronics Corp. Дата публикации: 2018-06-05.

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Номер патента: US09691674B2. Автор: Yoshihiro Kodaira. Владелец: Fuji Electric Co Ltd. Дата публикации: 2017-06-27.

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Номер патента: US09437461B2. Автор: Makoto Higashidate. Владелец: Fuji Electric Co Ltd. Дата публикации: 2016-09-06.

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Номер патента: US20160322297A1. Автор: Hae Soo Kim. Владелец: SK hynix Inc. Дата публикации: 2016-11-03.

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Номер патента: US20230063990A1. Автор: Tsuyoshi So. Владелец: Fujitsu Ltd. Дата публикации: 2023-03-02.

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Номер патента: US20180069044A1. Автор: Keiichiro Kashihara. Владелец: Renesas Electronics Corp. Дата публикации: 2018-03-08.

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Номер патента: US20140008780A1. Автор: Mahiro Tsujino,Manabu Miyahara. Владелец: Kyocera Corp. Дата публикации: 2014-01-09.

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Номер патента: US20240088021A1. Автор: Tae Kyung Kim,Jeong Yun Lee,Jae Yoon Noh,Hyo Sub YEOM. Владелец: SK hynix Inc. Дата публикации: 2024-03-14.

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Номер патента: US12002768B2. Автор: Chung-Shi Liu,Hao-Yi Tsai,Chih-Hao Chang,Shih-Wei Chen,Po-Chun Lin,Chia-Hung Liu,Yu-Chih Huang,Chun-Ti LU,Zheng-Gang Tsai. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-06-04.

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Номер патента: US8071971B2. Автор: Byung-Ho Lee. Владелец: Dongbu HitekCo Ltd. Дата публикации: 2011-12-06.

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Номер патента: US8269353B2. Автор: Koji Miyata,Masahiro Okita,Hiroyuki Nakanishi,Kazuaki Tatsumi,Masato Yokobayashi. Владелец: Sharp Corp. Дата публикации: 2012-09-18.

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Номер патента: US20120146121A1. Автор: Kyung Do Kim. Владелец: Hynix Semiconductor Inc. Дата публикации: 2012-06-14.

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Номер патента: US20080054465A1. Автор: Jong-Taek Hwang. Владелец: Dongbu HitekCo Ltd. Дата публикации: 2008-03-06.

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Номер патента: US09984966B2. Автор: Yoshitaka Kimura. Владелец: Ablic Inc. Дата публикации: 2018-05-29.

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Номер патента: US09917049B2. Автор: Toshiya Kotani,Takafumi Taguchi,Chikaaki Kodama,Hiromitsu Mashita,Fumiharu Nakajima,Ryota Aburada. Владелец: Toshiba Memory Corp. Дата публикации: 2018-03-13.

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Номер патента: CN114446936A. Автор: 黄河,汪新学,王敬平,徐海瑛. Владелец: Smic Ningbo Co ltd Shanghai Branch. Дата публикации: 2022-05-06.

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Номер патента: US7271860B2. Автор: Tomohiko Iwane,Kazuhiko Fukuta,Masahiko Monzen. Владелец: Sharp Corp. Дата публикации: 2007-09-18.

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Номер патента: KR19990082268A. Автор: 노부아키 하시모토. Владелец: 야스카와 히데아키. Дата публикации: 1999-11-25.

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Номер патента: US11895823B2. Автор: Noriaki Ikeda. Владелец: Winbond Electronics Corp. Дата публикации: 2024-02-06.

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Номер патента: US20230352406A1. Автор: Tao Li,Ruilong Xie,Kisik Choi,Mukta Ghate Farooq,Liqiao QIN. Владелец: International Business Machines Corp. Дата публикации: 2023-11-02.

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Номер патента: US20230230936A1. Автор: Ping-Heng Wu. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-07-20.

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Номер патента: US20150207074A1. Автор: Noriyoshi Shimizu,Yuji Awano. Владелец: Fujitsu Ltd. Дата публикации: 2015-07-23.

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Номер патента: US20130109170A1. Автор: Noriyoshi Shimizu,Shintaro Sato,Yuji Awano. Владелец: Fujitsu Ltd. Дата публикации: 2013-05-02.

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Номер патента: US20030222673A1. Автор: Katsuhiro Kato. Владелец: Oki Electric Industry Co Ltd. Дата публикации: 2003-12-04.

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Номер патента: US09793210B2. Автор: Jae Hwan Kim. Владелец: SK hynix Inc. Дата публикации: 2017-10-17.

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Номер патента: US09691618B2. Автор: Sejin Oh,Dougyong Sung,Kiho Hwang,Hyunju Lee,Je-Hun WOO,Seungkyu Lim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-06-27.

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Номер патента: US09659891B2. Автор: Yeong-Jyh Lin,Bor-Ping Jang,Chien Ling Hwang,Hsiao-Chung LIANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-05-23.

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Номер патента: JP4832369B2. Автор: 信幸 林,佳彦 今中. Владелец: Fujitsu Ltd. Дата публикации: 2011-12-07.

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Номер патента: US20230178577A1. Автор: Masaaki Bairo. Владелец: Sony Semiconductor Solutions Corp. Дата публикации: 2023-06-08.

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Номер патента: US20240040807A1. Автор: Eunseok Lee. Владелец: Wuhan Xinxin Semiconductor Manufacturing Co Ltd. Дата публикации: 2024-02-01.

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Номер патента: US10566222B2. Автор: Shigeru Mori,Hiroyuki Nakamura,Toru Iwagami,Maki Hasegawa,Shuhei Yokoyama. Владелец: Mitsubishi Electric Corp. Дата публикации: 2020-02-18.

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Номер патента: US20190027452A1. Автор: Chen-Shien Chen,chao-yi Wang,Hon-Lin Huang,Chin-Yu Ku,Cheng-Lung Yang,Chien-Hung Kuo,Ching-Hui Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2019-01-24.

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Номер патента: US20190103297A1. Автор: Shigeru Mori,Hiroyuki Nakamura,Toru Iwagami,Maki Hasegawa,Shuhei Yokoyama. Владелец: Mitsubishi Electric Corp. Дата публикации: 2019-04-04.

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Номер патента: US20230268314A1. Автор: Chin-Li Kao,An-Hsuan HSU,Shan-Bo WANG. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2023-08-24.

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Номер патента: US11830770B2. Автор: Chii-Ping Chen,Neng-Jye Yang,Hsiu-Wen Hsueh,Cai-Ling Wu,Ya-Ching Tseng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-28.

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Номер патента: US11776923B2. Автор: Masaki HANEDA. Владелец: Sony Corp. Дата публикации: 2023-10-03.

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Номер патента: US20230411210A1. Автор: Chii-Ping Chen,Neng-Jye Yang,Hsiu-Wen Hsueh,Cai-Ling Wu,Ya-Ching Tseng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-12-21.

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Номер патента: US20190088502A1. Автор: Shu-Ming Li,Tzu-Ming Ou Yang,Ko-Po Tseng. Владелец: Winbond Electronics Corp. Дата публикации: 2019-03-21.

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Номер патента: US11996389B2. Автор: Jun Liu,Weihua Cheng. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-05-28.

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Номер патента: US20210098290A1. Автор: Chii-Ping Chen,Neng-Jye Yang,Hsiu-Wen Hsueh,Cai-Ling Wu,Ya-Ching Tseng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-04-01.

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Номер патента: US20210183661A1. Автор: Masaki HANEDA. Владелец: Sony Corp. Дата публикации: 2021-06-17.

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Номер патента: US20230402411A1. Автор: Masaki HANEDA. Владелец: Sony Group Corp. Дата публикации: 2023-12-14.

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Номер патента: TW200305942A. Автор: Manfred Horstmann,Karsten Wieczorek,Rolf Stephan. Владелец: Advanced Micro Devices Inc. Дата публикации: 2003-11-01.

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Номер патента: AU2002359813A8. Автор: Manfred Horstmann,Karsten Wieczorek,Rolf Stephan. Владелец: Advanced Micro Devices Inc. Дата публикации: 2003-09-16.

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Номер патента: US20030160285A1. Автор: Mika Shiiki. Владелец: Individual. Дата публикации: 2003-08-28.

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Номер патента: US20060131704A1. Автор: Patrick Carberry,Jeffery Gilbert,George Libricz,Ralph Moyer. Владелец: Individual. Дата публикации: 2006-06-22.

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Номер патента: US20040206984A1. Автор: Tsugihiro Matsuoka. Владелец: Sony Corp. Дата публикации: 2004-10-21.

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Номер патента: US20010043136A1. Автор: Jerome Chu. Владелец: Individual. Дата публикации: 2001-11-22.

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Номер патента: US20190025505A1. Автор: Jochen Kraft,Joerg Siegert. Владелец: ams AG. Дата публикации: 2019-01-24.

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Номер патента: JP3633559B2. Автор: 伸晃 橋元. Владелец: Seiko Epson Corp. Дата публикации: 2005-03-30.

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Номер патента: JP3654113B2. Автор: 秀隆 斉藤. Владелец: Seiko Epson Corp. Дата публикации: 2005-06-02.

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Номер патента: JP3879803B2. Автор: 伸晃 橋元. Владелец: Seiko Epson Corp. Дата публикации: 2007-02-14.

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Номер патента: JP4010298B2. Автор: 春樹 伊東. Владелец: Seiko Epson Corp. Дата публикации: 2007-11-21.

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Номер патента: KR100510316B1. Автор: 하시모토노부아키. Владелец: 세이코 엡슨 가부시키가이샤. Дата публикации: 2005-08-25.

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Номер патента: JP2003243441A. Автор: Takuya Takahashi,卓也 高橋. Владелец: Seiko Epson Corp. Дата публикации: 2003-08-29.

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Номер патента: CN100565851C. Автор: 伊东春树. Владелец: Seiko Epson Corp. Дата публикации: 2009-12-02.

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Номер патента: JP4448617B2. Автор: 伸晃 橋元. Владелец: Seiko Epson Corp. Дата публикации: 2010-04-14.

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Номер патента: JP4009846B2. Автор: 好彦 横山. Владелец: Seiko Epson Corp. Дата публикации: 2007-11-21.

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Номер патента: WO2017042035A1. Автор: Jörg Siegert,Jochen Kraft. Владелец: ams AG. Дата публикации: 2017-03-16.

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Номер патента: TW515011B. Автор: Toshiki Nakayama. Владелец: Seiko Epson Corp. Дата публикации: 2002-12-21.

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Номер патента: JP3891292B2. Автор: 浩司 山口. Владелец: Seiko Epson Corp. Дата публикации: 2007-03-14.

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Номер патента: JP4562006B2. Автор: 伸晃 橋元. Владелец: Seiko Epson Corp. Дата публикации: 2010-10-13.

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Номер патента: JP4240226B2. Автор: 輝直 花岡. Владелец: Seiko Epson Corp. Дата публикации: 2009-03-18.

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Номер патента: JP3981710B2. Автор: 伸晃 橋元. Владелец: Seiko Epson Corp. Дата публикации: 2007-09-26.

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Номер патента: JP3888438B2. Автор: 浩之 冨松. Владелец: Seiko Epson Corp. Дата публикации: 2007-03-07.

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Номер патента: JP4016276B2. Автор: 輝直 花岡. Владелец: Seiko Epson Corp. Дата публикации: 2007-12-05.

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Номер патента: JP3630043B2. Автор: 邦光 三上. Владелец: Seiko Epson Corp. Дата публикации: 2005-03-16.

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Номер патента: US11670587B2. Автор: Chin-Ling Huang. Владелец: Nanya Technology Corp. Дата публикации: 2023-06-06.

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Номер патента: US20030060000A1. Автор: Yohei Kurashima,Jun Amako,Kazushige Umetsu. Владелец: Seiko Epson Corp. Дата публикации: 2003-03-27.

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Номер патента: JP2003243605A. Автор: Jun Taniguchi,潤 谷口. Владелец: Seiko Epson Corp. Дата публикации: 2003-08-29.

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Номер патента: JP3972183B2. Автор: 敏紀 中山. Владелец: Seiko Epson Corp. Дата публикации: 2007-09-05.

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Номер патента: US20220336350A1. Автор: Chin-Ling Huang. Владелец: Nanya Technology Corp. Дата публикации: 2022-10-20.

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Номер патента: US20070200258A1. Автор: Joachim Mahler,Seow Tang. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2007-08-30.

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Номер патента: US20210074685A1. Автор: Chih-Wei Chang. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2021-03-11.

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Номер патента: US20170287932A1. Автор: Min Sik Jang. Владелец: SK hynix Inc. Дата публикации: 2017-10-05.

Stacked wafer manufacturing method

Номер патента: US20110256667A1. Автор: Koichi Kondo,Akihito Kawai. Владелец: Disco Corp. Дата публикации: 2011-10-20.

Face-to-face semiconductor device with fan-out porch

Номер патента: US20230420440A1. Автор: Jong Sik Paek,Yeongbeom Ko. Владелец: Micron Technology Inc. Дата публикации: 2023-12-28.

Semiconductor device and method for forming same

Номер патента: EP3985724A1. Автор: Liang Zhao. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2022-04-20.

Face-to-face semiconductor device with fan-out porch

Номер патента: US20230013960A1. Автор: Jong Sik Paek,Yeongbeom Ko. Владелец: Micron Technology Inc. Дата публикации: 2023-01-19.

Face-to-face semiconductor device with fan-out porch

Номер патента: US20210202454A1. Автор: Jong Sik Paek,Yeongbeom Ko. Владелец: Micron Technology Inc. Дата публикации: 2021-07-01.

Face-to-face semiconductor device with fan-out porch

Номер патента: US11749665B2. Автор: Jong Sik Paek,Yeongbeom Ko. Владелец: Micron Technology Inc. Дата публикации: 2023-09-05.

Electro-optical device, manufacturing method of electro-optical device, and electronic apparatus

Номер патента: US9823438B2. Автор: Manabu Kondo. Владелец: Seiko Epson Corp. Дата публикации: 2017-11-21.

Electro-optical device, manufacturing method of electro-optical device, and electronic apparatus

Номер патента: US9541729B2. Автор: Manabu Kondo. Владелец: Seiko Epson Corp. Дата публикации: 2017-01-10.

Electro-optical device, manufacturing method of electro-optical device, and electronic apparatus

Номер патента: US20160282582A1. Автор: Manabu Kondo. Владелец: Seiko Epson Corp. Дата публикации: 2016-09-29.

Electro-optical device, manufacturing method of electro-optical device, and electronic apparatus

Номер патента: US20170102516A1. Автор: Manabu Kondo. Владелец: Seiko Epson Corp. Дата публикации: 2017-04-13.

Optical detection device, manufacturing method of optical detection device, and electronic apparatus

Номер патента: US20240290813A1. Автор: Tomohiro Sugiyama,Takaaki Hirano,Toshiyuki Ishimaru,Shinichi Imai,Suguru Saito,Nobutoshi Fujii,Yosuke Fujii,Masaki HANEDA,Takashi OINOUE,Keiji Ohshima,Ikue Mitsuhashi,Takuya Kurotori,Kengo Kotoo,Yoshiki Shirasu,Kazuki Shimomura,Kenichi Tokuoka. Владелец: Sony Semiconductor Solutions Corp. Дата публикации: 2024-08-29.

Semiconductor device and its manufacturing method, stacked type semiconductor device, circuit substrate and electronic machine

Номер патента: TW492120B. Автор: Kenji Wada,Terunao Hanaoka. Владелец: Seiko Epson Corp. Дата публикации: 2002-06-21.

Film carrier tapes, semiconductor assemblies, semiconductor devices and their manufacturing methods, mounting substrates and electronic devices

Номер патента: KR20000064743A. Автор: 노부아키 하시모토. Владелец: 야스카와 히데아키. Дата публикации: 2000-11-06.

ESD protection device with reduced harmonic distortion

Номер патента: US11936178B2. Автор: Joost Adriaan Willemen,Egle Tylaite. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2024-03-19.

Packaged semiconductor devices, methods of packaging semiconductor devices, and PoP devices

Номер патента: US9355973B2. Автор: Jing-Cheng Lin,Po-Hao Tsai,Jui-Pin Hung. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-05-31.

Packaged Semiconductor Devices, Methods of Packaging Semiconductor Devices, and PoP Devices

Номер патента: US20160276278A1. Автор: Jing-Cheng Lin,Po-Hao Tsai,Jui-Pin Hung. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-09-22.

Semiconductor device and method of manufacturing the same, circuit board, and electronic instrument

Номер патента: US20050156311A1. Автор: Nobuaki Hashimoto. Владелец: Seiko Epson Corp. Дата публикации: 2005-07-21.

Semiconductor device and the manufacturing method thereof, and semiconductor wafer

Номер патента: TW200423315A. Автор: Haruki Ito. Владелец: Seiko Epson Corp. Дата публикации: 2004-11-01.

Packaged semiconductor devices, methods of packaging semiconductor devices, and PoP devices

Номер патента: US9570401B2. Автор: Jing-Cheng Lin,Po-Hao Tsai,Jui-Pin Hung. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-02-14.

Semiconductor device and electronic device

Номер патента: US20210383881A1. Автор: Shunpei Yamazaki,Takanori Matsuzaki,Tomoaki Atsumi,Tatsuya Onuki. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2021-12-09.

Semiconductor device package

Номер патента: US12009312B2. Автор: Chanyuan Liu,Kuo-Hsien Liao,Yu-Hsiang Sun. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2024-06-11.

Method of manufacturing semiconductor device and semiconductor device, method of manufacturing electrooptic device and electrooptic device, and electronic apparatus employing it

Номер патента: WO1999030370A1. Автор: Masahiro Yasukawa. Владелец: SEIKO EPSON CORPORATION. Дата публикации: 1999-06-17.

Method of manufacturing semiconductor device and semiconductor device, method of manufacturing electrooptic device and electrooptic device, and electronic apparatus employing it

Номер патента: EP0991126A4. Автор: Masahiro Yasukawa. Владелец: Seiko Epson Corp. Дата публикации: 2002-01-23.

Substrate for semiconductor device, method of manufacturing substrate for semiconductor device, substrate for electro-optical device, electro-optical device, and electronic apparatus

Номер патента: KR100698000B1. Автор: 미노루 모리와키. Владелец: 세이코 엡슨 가부시키가이샤. Дата публикации: 2007-03-23.

Semiconductor devices with ion-sensitive field effect transistor

Номер патента: US20210055256A1. Автор: Eng Huat Toh,Shyue Seng Tan,Xinshu CAI. Владелец: GLOBALFOUNDRIES SINGAPORE PTE LTD. Дата публикации: 2021-02-25.

Semiconductor device and its manufacture method

Номер патента: TW498522B. Автор: Ikuo Yoshida,Hiroshi Kikuchi,Toshihiko Sato,Tomo Shimizu,Hideko Ando. Владелец: HITACHI LTD. Дата публикации: 2002-08-11.

Semiconductor device and the manufacturing method of the same

Номер патента: TW586156B. Автор: Mutsumi Okajima. Владелец: Toshiba Corp. Дата публикации: 2004-05-01.

Semiconductor device and its manufacturing method

Номер патента: TW461089B. Автор: Takashi Miyato. Владелец: Mitsubishi Electric Corp. Дата публикации: 2001-10-21.

Organic semiconductor device and its manufacturing method

Номер патента: AU2003261715A1. Автор: Kenji Nakamura,Satoru Ohta. Владелец: Pioneer Corp. Дата публикации: 2004-03-19.

Semiconductor device and its manufacturing method

Номер патента: TW399336B. Автор: Yukio Maki. Владелец: Mitsubishi Electric Corp. Дата публикации: 2000-07-21.

The semiconductor device and its manufacturing method

Номер патента: TW326558B. Автор: Toshio Miyamoto,Kunihiro Tsubosaki. Владелец: HITACHI LTD. Дата публикации: 1998-02-11.

Semiconductor devices and the manufacturing method

Номер патента: TW552562B. Автор: Mitsuo Usami. Владелец: HITACHI LTD. Дата публикации: 2003-09-11.

Semiconductor device and its manufacturing method

Номер патента: US20160141241A1. Автор: Akira Nakajima,Yoshiaki Yamamoto. Владелец: Renesas Electronics Corp. Дата публикации: 2016-05-19.

Thin semiconductor device and its manufacturing method

Номер патента: TW452903B. Автор: Tzung-Je Tsai,Jin-Chiuan Bai. Владелец: United Test Ct Inc. Дата публикации: 2001-09-01.

Semiconductor device and its manufacturing method, circuit board, and electric apparatus

Номер патента: WO2003079431A1. Автор: Ikuya Miyazawa. Владелец: SEIKO EPSON CORPORATION. Дата публикации: 2003-09-25.

Semiconductor device structure and manufacturing method

Номер патента: TWI562291B. Автор: Yung Sheng Liu,Yi Chen Liu,Yi Jen Lai,Chun Jen Chen,Li Guo Lee,Hsi Kuei Cheng. Владелец: Taiwan Semiconductor Mfg Co Ltd. Дата публикации: 2016-12-11.

Semiconductor device and its manufacturing method

Номер патента: TW550767B. Автор: Kenichi Yamamoto,Junichi Arita,Kenji Ujiie. Владелец: HITACHI LTD. Дата публикации: 2003-09-01.

Semiconductor device and its manufacturing method

Номер патента: TW515036B. Автор: Shinichiro Kimura,Tomoyuki Hamada,Masahiko Hiratani. Владелец: HITACHI LTD. Дата публикации: 2002-12-21.

Semiconductor device and its manufacturing method

Номер патента: TW200529408A. Автор: Kazunari Suzuki,Toshihiro Shiotsuki,Hideyuki Suga,Kouichi Kanemoto. Владелец: Renesas Tech Corp. Дата публикации: 2005-09-01.

The semiconductor device and its manufacturing method

Номер патента: TW328652B. Автор: Masayuki Yasuda,Michio Tanaka,Michio Nishimura,Katsuhiro Saitou,Takashi Hayakawa. Владелец: Texas Instruments Inc. Дата публикации: 1998-03-21.

Semiconductor device and its manufacturing method thereof, mask for semiconductor manufacture, and optical proximity correction method

Номер патента: US20130249597A1. Автор: Yusaku Ono,Hironobu Taoka. Владелец: Renesas Electronics Corp. Дата публикации: 2013-09-26.

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SOLID-STATE IMAGE PICKUP ELEMENT, IMAGE PICKUP DEVICE, AND ELECTRONIC APPARATUS

Номер патента: US20170338273A1. Автор: FUJIWARA Atsushi. Владелец: . Дата публикации: 2017-11-23.

Lead frame, surface-mount semiconductor device using the lead frame, and electronic device having the surface-mount semiconductor device mounted on a circuit board

Номер патента: JP4137782B2. Автор: 保寿 中澤,雄市 中村. Владелец: Sharp Corp. Дата публикации: 2008-08-20.

Semiconductor substrate, process for production thereof, and semiconductor device

Номер патента: US5858855A. Автор: Kenya Kobayashi. Владелец: NEC Corp. Дата публикации: 1999-01-12.

Capacitor and manufacturing method thereof

Номер патента: US5568352A. Автор: Cheol-Seong Hwang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 1996-10-22.

Improved performance optically coated semiconductor devices and related methods of manufacture

Номер патента: WO2009075880A2. Автор: Jamie Knapp. Владелец: Newport Corporation. Дата публикации: 2009-06-18.

TERMINAL LAND FRAME AND MANUFACTURING METHOD THEREOF, AND RESIN-ENCLOSED SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

Номер патента: JP3916352B2. Автор: 幸雄 山口. Владелец: Panasonic Corp. Дата публикации: 2007-05-16.

Multichip semiconductor device and inspection method therefor, and electronic device mounted with the multichip semiconductor device

Номер патента: JP2008203089A. Автор: 誠 松島,Makoto Matsushima. Владелец: Ricoh Co Ltd. Дата публикации: 2008-09-04.

Method for patterning metal foil, electric wiring substrate and its manufacturing method, semiconductor device and its manufacturing method, and circuit board and electronic device

Номер патента: JP2002012988A. Автор: 秀樹 湯澤,Hideki Yuzawa. Владелец: Seiko Epson Corp. Дата публикации: 2002-01-15.

Improved performance optically coated semiconductor devices and related methods of manufacture

Номер патента: WO2009075880A3. Автор: Jamie Knapp. Владелец: Newport Corporation. Дата публикации: 2009-09-24.

Semiconductor device and manufacturing method of the semiconductor device

Номер патента: US20240064975A1. Автор: Nam Jae LEE. Владелец: SK hynix Inc. Дата публикации: 2024-02-22.

Liquid crystal display device having tape carrier with semiconductor device on flap portion

Номер патента: US5448387A. Автор: Kazunari Kurokawa,Hironobu Abe,Kazuyuki Kitagawa. Владелец: Hitachi Device Engineering Co Ltd. Дата публикации: 1995-09-05.

Device with integrated power supply

Номер патента: US20140035155A1. Автор: WEI Liu,Yeow Kheng Lim,Soh Yun Siah,Juan Boon Tan,Shunqiang Gong. Владелец: GLOBALFOUNDRIES SINGAPORE PTE LTD. Дата публикации: 2014-02-06.

Performance Optically Coated Semiconductor Devices and Related Methods of Manufacture

Номер патента: US20130221467A1. Автор: Jamie Knapp. Владелец: Newport Corp USA. Дата публикации: 2013-08-29.

Semiconductor device and manufacturing method of the semiconductor device

Номер патента: US11832445B2. Автор: Nam Jae LEE. Владелец: SK hynix Inc. Дата публикации: 2023-11-28.

Camera package, manufacturing method of camera package, and electronic device

Номер патента: US20200328248A1. Автор: Hiroyasu Matsugai. Владелец: Sony Semiconductor Solutions Corp. Дата публикации: 2020-10-15.

Semiconductor device and method of manufacturing the same, semiconductor module, and electronic device

Номер патента: US20170323915A1. Автор: Kiyohisa Tanaka. Владелец: Sony Corp. Дата публикации: 2017-11-09.

A kind of semiconductor devices and its manufacturing method and electronic device

Номер патента: CN108346658A. Автор: 李勇. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2018-07-31.

Contact electrode structure for semiconductor device

Номер патента: US5302855A. Автор: Yoshio Nakamura,Masaru Sakamoto,Shigeyuki Matsumoto. Владелец: Canon Inc. Дата публикации: 1994-04-12.

Semiconductor device assemblies and systems including at least one conductive pathway extending around a side of at least one semiconductor device and methods for forming the same

Номер патента: US20080122113A1. Автор: David J. Corisis,Chin Hui Chong,Choon Kuan Lee. Владелец: Individual. Дата публикации: 2008-05-29.

Semiconductor chip, semiconductor wafer, semiconductor device and method of manufacturing the same, circuit board, and electronic instrument

Номер патента: KR100654502B1. Автор: 하라가즈미. Владелец: 세이코 엡슨 가부시키가이샤. Дата публикации: 2006-12-05.

Packaged semiconductor devices with wireless charging means

Номер патента: US10097030B2. Автор: Chen-Hua Yu,Hao-Yi Tsai,Hung-Yi Kuo,Ming-Hung Tseng,Tzu-Sung Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-10-09.

Semiconductor device and manufacture method of the same

Номер патента: US10685917B2. Автор: Zhiqi Wang. Владелец: China Wafer Level CSP Co Ltd. Дата публикации: 2020-06-16.

Semiconductor device and its manufacturing method, and electronic device

Номер патента: WO2003096421A1. Автор: Yasushi Morita,Takashi Nagano. Владелец: SONY CORPORATION. Дата публикации: 2003-11-20.

Stacked semiconductor devices

Номер патента: EP2579307A1. Автор: Kevin J. Hess,Perry H Pelley,Michael B. McShane. Владелец: FREESCALE SEMICONDUCTOR INC. Дата публикации: 2013-04-10.

Apparatuses and methods for coupling a plurality of semiconductor devices

Номер патента: US20240063188A1. Автор: Timothy M. Hollis,Matthew B. Leslie,Roy E. Greeff. Владелец: Micron Technology Inc. Дата публикации: 2024-02-22.

Semiconductor device

Номер патента: US11869844B2. Автор: Hiroyuki Shinkai. Владелец: ROHM CO LTD. Дата публикации: 2024-01-09.

Apparatuses and methods for coupling a plurality of semiconductor devices

Номер патента: US11837580B2. Автор: Timothy M. Hollis,Matthew B. Leslie,Roy E. Greeff. Владелец: Micron Technology Inc. Дата публикации: 2023-12-05.

Manufacturing method for semiconductor device embedded substrate

Номер патента: US20100112802A1. Автор: Toshio Kobayashi,Tadashi Arai,Takaharu Yamano. Владелец: Shinko Electric Industries Co Ltd. Дата публикации: 2010-05-06.

Techniques for forming semiconductor device packages and related packages, intermediate products, and methods

Номер патента: US20210091036A1. Автор: Yu Jen Chen,Po Chih Yang,Po Chen Kuo,Shih Wei Liang. Владелец: Micron Technology Inc. Дата публикации: 2021-03-25.

Semiconductor device and manufacture thereof

Номер патента: US20190355686A1. Автор: Jun Zhu,You WU. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2019-11-21.

Methods for assembling semiconductor devices in superimposed relation with adhesive material defining the distance adjacent semiconductor devices are spaced apart from one another

Номер патента: US20050067684A1. Автор: James Derderian. Владелец: Derderian James M.. Дата публикации: 2005-03-31.

Systems and Methods for a Semicdonductor Structure Having Multiple Semiconductor-Device Layers

Номер патента: US20170287773A1. Автор: Clement Hsingjen Wann,Chun-Hsiung Tsai,Yi-Tang LIN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-10-05.

Systems and Methods for a Semiconductor Structure Having Multiple Semiconductor-Device Layers

Номер патента: US20180374742A1. Автор: Clement Hsingjen Wann,Chun Hsiung Tsai,Yi-Tang LIN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-12-27.

Systems and Methods for a Semiconductor Structure Having Multiple Semiconductor-Device Layers

Номер патента: US20200126845A1. Автор: Clement Hsingjen Wann,Chun Hsiung Tsai,Yi-Tang LIN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-04-23.

Semiconductor device and manufacturing method therefor

Номер патента: US20240162379A1. Автор: Kai Cheng,Weihua Liu. Владелец: Enkris Semiconductor Wuxi Ltd. Дата публикации: 2024-05-16.

Semiconductor substrate, manufacturing method for semiconductor substrate, and electronic device having semiconductor substrate

Номер патента: US20240120259A1. Автор: Koichi Takeuchi. Владелец: Sony Group Corp. Дата публикации: 2024-04-11.

Substrate for organic electronic device

Номер патента: US09537098B2. Автор: Yeon Keun Lee,Seong Soo Jang,Min Choon Park,Yong Sik Ahn,Jung Doo Kim,Jung Bum Kim,Kyoung Sik Moon. Владелец: LG Display Co Ltd. Дата публикации: 2017-01-03.

Substrate for organic electronic device

Номер патента: US09537097B2. Автор: Yeon Keun Lee,Seong Soo Jang,Min Choon Park,Yong Sik Ahn,Jung Doo Kim,Jung Bum Kim,Kyoung Sik Moon. Владелец: LG Display Co Ltd. Дата публикации: 2017-01-03.

Liquid impingement cooling module for semiconductor devices

Номер патента: US5270572A. Автор: Kenichi Kasai,Noriyuki Ashiwake,Toshio Hatsuda,Toshio Hatada,Motohiro Sato,Tadakatsu Nakajima,Shigeo Ohashi,Shigeyuki Sasaki,Atsuo Nishihara,Takahiro Daikoku,Heikichi Kuwahara,Hiroshi Inouye. Владелец: HITACHI LTD. Дата публикации: 1993-12-14.

Film carrier tape, semiconductor assembly, semiconductor device and method of manufacturing the same, mounted board, and electronic instrument

Номер патента: US6414382B1. Автор: Nobuaki Hashimoto. Владелец: Seiko Epson Corp. Дата публикации: 2002-07-02.

Semiconductor device tape carrier, manufacturing method for semiconductor device, semiconductor device, and semiconductor module device

Номер патента: TW200828467A. Автор: Kenji Toyosawa,Toshiharu Seko. Владелец: Sharp Kk. Дата публикации: 2008-07-01.

Temperature controller for semiconductor device

Номер патента: US4689659A. Автор: Hideo Watanabe. Владелец: Fuji Photo Film Co Ltd. Дата публикации: 1987-08-25.

Method and system for estimating junction temperature of power semiconductor device of power module

Номер патента: US11953386B2. Автор: Je Hwan Lee. Владелец: Kia Motors Corp. Дата публикации: 2024-04-09.

Ground connection for semiconductor device assembly

Номер патента: US11764161B2. Автор: Jong Sik Paek,Yeongbeom Ko,Youngik Kwon. Владелец: Micron Technology Inc. Дата публикации: 2023-09-19.

Semiconductor device and methods for manufacturing thereof

Номер патента: US11776848B2. Автор: Chih-Wei Chang. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-10-03.

Semiconductor device package with stress reduction design and method of forming the same

Номер патента: US11894320B2. Автор: Shin-puu Jeng,Po-Yao Lin,Po-Chen LAI,Shu-Shen Yeh,Chin-Hua Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-02-06.

Methods and systems for packaging semiconductor devices to improve yield

Номер патента: US20180331088A1. Автор: Runzi Chang,Winston Lee. Владелец: MARVELL WORLD TRADE LTD. Дата публикации: 2018-11-15.

Semiconductor device

Номер патента: US09935363B2. Автор: Teruyuki Fujii,Kazuya Hanaoka. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2018-04-03.

Battery protection plate and manufacturing method therefor, battery, and electronic device

Номер патента: EP4207457A1. Автор: Yanting Zhang,Yabin ZHAO,Yifang Cao,Yumei LIANG. Владелец: Dongguan Nvt Technology Co Ltd. Дата публикации: 2023-07-05.

Optical semiconductor device and fabricating method thereof

Номер патента: US20020139989A1. Автор: Takayuki Matsuyama. Владелец: Toshiba Corp. Дата публикации: 2002-10-03.

SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE PACKAGE, AND MANUFACTURING METHODS THEREOF

Номер патента: US20210021097A1. Автор: Hashimoto Takuya,OKAHISA Eiichiro,Kobayashi Suguru,Matsushita Shigeru,Nakazawa Katsuya,Uehara Sumio,Yumoto Kazuhito. Владелец: . Дата публикации: 2021-01-21.

SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE PACKAGE, AND MANUFACTURING METHODS THEREOF

Номер патента: US20190305511A1. Автор: Hashimoto Takuya,OKAHISA Eiichiro,Kobayashi Suguru,Matsushita Shigeru,Nakazawa Katsuya,Uehara Sumio,Yumoto Kazuhito. Владелец: . Дата публикации: 2019-10-03.

Semiconductor integrated circuit device and electronic device for driving a power semiconductor device

Номер патента: US09835658B2. Автор: Makoto Tsurumaru. Владелец: Renesas Electronics Corp. Дата публикации: 2017-12-05.

Light emitting device, manufacturing apparatus and method thereof, and image printing apparatus

Номер патента: US20070047004A1. Автор: Kazunori Sakurai. Владелец: Seiko Epson Corp. Дата публикации: 2007-03-01.

Semiconductor device and its manufacturing method

Номер патента: US20110211390A1. Автор: Toshihiro Tanaka,Satoru Hanzawa,Nozomu Matsuzaki,Fumihiko Nitta. Владелец: Renesas Technology Corp. Дата публикации: 2011-09-01.

Semiconductor device and its manufacturing method

Номер патента: US20140241051A1. Автор: Toshihiro Tanaka,Satoru Hanzawa,Nozomu Matsuzaki,Fumihiko Nitta. Владелец: Renesas Electronics Corp. Дата публикации: 2014-08-28.

Semiconductor device, semiconductor system, and monitoring method thereof

Номер патента: US20140049310A1. Автор: Yong-suk Joo,Joo-Hwan Cho. Владелец: SK hynix Inc. Дата публикации: 2014-02-20.

Semiconductor device and a manufacturing method of the semiconductor device

Номер патента: US20090189136A1. Автор: Nozomu Matsuzaki. Владелец: Renesas Technology Corp. Дата публикации: 2009-07-30.

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Номер патента: US11950442B2. Автор: Haigang Qing. Владелец: Chengdu BOE Optoelectronics Technology Co Ltd. Дата публикации: 2024-04-02.

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Номер патента: US11921960B2. Автор: FAN He,Xiaoqing SHU,Xiangdan Dong,Yunsheng Xiao,Zhengwei LUO,Jiping Zhao. Владелец: Chengdu BOE Optoelectronics Technology Co Ltd. Дата публикации: 2024-03-05.

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Номер патента: US11656727B2. Автор: FAN He,Xiaoqing SHU,Xiangdan Dong,Yunsheng Xiao,Zhengwei LUO,Jiping Zhao. Владелец: Chengdu BOE Optoelectronics Technology Co Ltd. Дата публикации: 2023-05-23.

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Номер патента: US20180323703A1. Автор: Chang-Hyun Lee,Jae-Boum Park,Bong-Hwa Jeong. Владелец: SK hynix Inc. Дата публикации: 2018-11-08.

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Номер патента: US20230221823A1. Автор: FAN He,Xiaoqing SHU,Xiangdan Dong,Yunsheng Xiao,Zhengwei LUO,Jiping Zhao. Владелец: Chengdu BOE Optoelectronics Technology Co Ltd. Дата публикации: 2023-07-13.

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Номер патента: US20090327981A1. Автор: Satoshi Nakamura,Tsutomu Hara,Ken Iwakura,Mitsuaki Katagiri,Yukitoshi Hirose,Satoshi Itaya. Владелец: Elpida Memory Inc. Дата публикации: 2009-12-31.

Semiconductor device, method of manufacturing the same, display device, photoelectric conversion device, electronic device, illumination device, and mobile object

Номер патента: US11765927B2. Автор: Ryuji Ishii,Tetsuo Takahashi,Koichi Ishige. Владелец: Canon Inc. Дата публикации: 2023-09-19.

Memory and controlling method thereof, memory system and electronic device

Номер патента: US20240164105A1. Автор: Tao Yang,Zhiliang Xia,Wenxi Zhou,Dongxue Zhao. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-05-16.

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Номер патента: US09485338B2. Автор: Amy Qian,Pinida J. Moolsintong,Santhana Krishnan BALAJI. Владелец: Apple Inc. Дата публикации: 2016-11-01.

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Номер патента: US20070252188A1. Автор: Kazuaki Isobe. Владелец: Individual. Дата публикации: 2007-11-01.

Semiconductor device and manufacturing method of same

Номер патента: US20100068857A1. Автор: Kazuaki Isobe. Владелец: Individual. Дата публикации: 2010-03-18.

Packaging structure and semiconductor device having same, and electronic apparatus having semiconductor device

Номер патента: EP3869579A1. Автор: Wei Pang,Qingrui YANG,Menglun ZHANG,Chongling SUN. Владелец: ROFS Microsystem Tianjin Co Ltd. Дата публикации: 2021-08-25.

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Номер патента: US12096703B2. Автор: Qi Xiang,Taiwei CHIU,Tingying SHEN. Владелец: Xiamen Industrial Technology Research Institute Co Ltd. Дата публикации: 2024-09-17.

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Номер патента: US12102021B2. Автор: HE Qian,Taiwei CHIU,Tingying SHEN. Владелец: Xiamen Industrial Technology Research Institute Co Ltd. Дата публикации: 2024-09-24.

Lead free solder alloy and manufacturing method thereof

Номер патента: WO2009084798A1. Автор: Hyun Kyu Lee,Sang Ho Jeon,Yong Cheol Chu,Kang Hee KIM,Myoung Ho Chun. Владелец: DUKSAN HI-METAL CO., LTD.. Дата публикации: 2009-07-09.

Manufacturing method of a semiconductor device with a trench capacitor

Номер патента: US5302541A. Автор: Moriaki Akazawa. Владелец: Mitsubishi Electric Corp. Дата публикации: 1994-04-12.

Semiconductor device and system and method of crystal sharing

Номер патента: WO2007145653A2. Автор: Michael R. May,Marcus William May. Владелец: SIGMATEL, INC.. Дата публикации: 2007-12-21.

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Номер патента: US12101942B2. Автор: Bonwon KOO,Changseung LEE,Wooyoung Yang,Minwoo Choi,Hajun SUNG,Dongho Ahn,Kwangmin Park,Chungman Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-09-24.

Semiconductor device and manufacturing method thereof

Номер патента: US5218218A. Автор: Moriaki Akazawa. Владелец: Mitsubishi Electric Corp. Дата публикации: 1993-06-08.

Semiconductor device and message image output method

Номер патента: US20190389368A1. Автор: Koji Yasuda,Hirofumi Kawaguchi,Akihide Takahashi. Владелец: Renesas Electronics Corp. Дата публикации: 2019-12-26.

Semiconductor device and message image output method

Номер патента: US10766405B2. Автор: Koji Yasuda,Hirofumi Kawaguchi,Akihide Takahashi. Владелец: Renesas Electronics Corp. Дата публикации: 2020-09-08.

Alkali metal-modified acoustic reinforcing material, production method thereof, speaker and electronic device

Номер патента: EP4432705A2. Автор: Lei Zhang,Yijun Wang,Yuanhong Ma,Chang GONG,Mingbo GUO. Владелец: SSI New Material Zhenjiang Co Ltd. Дата публикации: 2024-09-18.

Laminated structure, semiconductor device, laminated structure manufacturing method, and semiconductor device manufacturing method

Номер патента: JP2009272437A. Автор: 幸栄 鈴木,隆徳 田野,敦 小野寺,Yukie Suzuki,Atsushi Onodera,Takanori Tano. Владелец: Ricoh Co Ltd. Дата публикации: 2009-11-19.

Semiconductor device having reduced field oxide recess and method of fabrication

Номер патента: US20010051410A1. Автор: Hao Fang,Toru Ishigaki,Masaaki Higashitani. Владелец: Individual. Дата публикации: 2001-12-13.

Semiconductor device having reduced field oxide recess and method of fabrication

Номер патента: US6492229B2. Автор: Hao Fang,Toru Ishigaki,Masaaki Higashitani. Владелец: Fujitsu AMD Semiconductor Ltd. Дата публикации: 2002-12-10.

Light emitting device, manufacturing method for light emitting device, and electronic equipment

Номер патента: TW200540769A. Автор: Ryoichi Nozawa. Владелец: Seiko Epson Corp. Дата публикации: 2005-12-16.

Light emitting device, manufacturing method for light emitting device, and electronic equipment

Номер патента: TWI267048B. Автор: Ryoichi Nozawa. Владелец: Seiko Epson Corp. Дата публикации: 2006-11-21.

Organic semiconductor element comprising linear source electrode and linear drain electrode and manufacturing method thereof, fabric structure and nonwoven structure using organic semiconductor element, and semiconductor device using organic semiconductor element, fabric structure or nonwoven structure

Номер патента: KR101595290B1. Автор: 오영석,이강은,이원오,정병문,엄문광,성동기,이제욱. Владелец: 한국기계연구원. Дата публикации: 2016-02-18.

Method for controlling display, storage medium, and electronic device

Номер патента: MY193324A. Автор: Hyun-Ju HONG,Ju-Yeong Lee,Suk-jae Lee,Yong-Jin KWON,Dong-Oh LEE,Yu-Sun CHEONG,Byung-Jin Kang,Gae-Youn Kim,Dae-myung Kim,Kwon-Ho SONG,Kwang-Hyun Cho,Byeng-Seok Choi. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-10-04.

Thermally Conductive Structure and Manufacturing Method Thereof, Heat Sink, and Electronic Device Including Heat Sink

Номер патента: US20240318922A1. Автор: Wenwen YUAN,Mingbo Shi. Владелец: Huawei Technologies Co Ltd. Дата публикации: 2024-09-26.

Method for controlling display, storage medium, and electronic device

Номер патента: EP4459969A2. Автор: Hyun-Ju HONG,Ju-Yeong Lee,Suk-jae Lee,Yong-Jin KWON,Dong-Oh LEE,Yu-Sun CHEONG,Byung-Jin Kang,Gae-Youn Kim,Dae-myung Kim,Kwon-Ho SONG,Kwang-Hyun Cho,Byeng-Seok Choi. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-11-06.

Organic transistor, compound, organic semiconductor material for non-luminescent organic semiconductor device, organic transistor material, coating solution for non-luminescent organic semiconductor device, organic transistor manufacturing method, organic semiconductor film manufacturing method, non-luminescent organic semiconductor device Organic semiconductor film and organic semiconductor material synthesis method

Номер патента: JP6082927B2. Автор: 哲 北村,博昭 津山,由久 宇佐美,哲也 渡邉,北村　哲,純一 竹谷,岡本　敏宏,敏宏 岡本,英治 福▲崎▼,雅史 小柳,渡邉　哲也,野村　公篤,公篤 野村,宇佐美　由久. Владелец: University of Tokyo NUC. Дата публикации: 2017-02-22.

Semiconductor device and manufacturing method of semiconductor device

Номер патента: US20230225229A1. Автор: HE Qian,Taiwei CHIU,Tingying SHEN. Владелец: Xiamen Industrial Technology Research Institute Co Ltd. Дата публикации: 2023-07-13.

Semiconductor device and its manufacturing method

Номер патента: TW517381B. Автор: Taku Umebayashi. Владелец: Sony Corp. Дата публикации: 2003-01-11.

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Номер патента: US20180067150A1. Автор: TSURUMARU Makoto. Владелец: RENESAS ELECTRONICS CORPORATION. Дата публикации: 2018-03-08.

Semiconductor device and its manufacture method, magnetic detection device and electronic compass

Номер патента: CN107658381A. Автор: 石原祐子,瀬良和彦. Владелец: Asahi Kasei EMD Corp. Дата публикации: 2018-02-02.

Lead free solder alloy and manufacturing method thereof

Номер патента: US20100272598A1. Автор: Hyun Kyu Lee,Sang Ho Jeon,Yong Cheol Chu,Kang Hee KIM,Myoung Ho Chun. Владелец: Duksan Hi Metal Co Ltd. Дата публикации: 2010-10-28.

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Номер патента: US20240032308A1. Автор: Bonwon KOO,Changseung LEE,Wooyoung Yang,Minwoo Choi,Hajun SUNG,Dongho Ahn,Kwangmin Park,Chungman Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-01-25.

Water tank, ventilation area design method thereof, storage medium and electronic apparatus

Номер патента: US20240208718A1. Автор: Yiyi Ma,Hongwu Tang,Saiyu Yuan,Feifei Zheng,Jialing LIANG,David Z. Zhu. Владелец: Zhejiang University ZJU. Дата публикации: 2024-06-27.

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Номер патента: US09898068B2. Автор: Keiji Hasegawa,Masaki Fujigaya,Kohei WAKAHARA,Go Sado. Владелец: Renesas Electronics Corp. Дата публикации: 2018-02-20.

Semiconductor device, electronic device, and method for driving semiconductor device

Номер патента: US20240185800A1. Автор: Susumu Kawashima,Tomoaki Atsumi. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2024-06-06.

Memories and operation methods thereof, memory systems and electronic devices

Номер патента: US20240312536A1. Автор: LEI Jin,An ZHANG,Kaikai You,Xinlei Jia,Jiayin HAN. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-09-19.

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Номер патента: US20180166144A1. Автор: Young Bo Shim,Tae Kyun SHIN,Hyeong Soo JEONG. Владелец: SK hynix Inc. Дата публикации: 2018-06-14.

Semiconductor Devices and Scrambled Data Transmission Methods Thereof

Номер патента: US20080183978A1. Автор: Keon-Han Sohn. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2008-07-31.

Piezoelectric sensor assembly and manufacturing method thereof, display panel and electronic device

Номер патента: US11850629B2. Автор: Xiufeng Li,Haisheng Wang,Yingming Liu,Lijun Zhao,Yanling Han,Peixiao LI,Yuzhen GUO,Chenyang ZHANG. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2023-12-26.

Semiconductor device and burn-in test method thereof

Номер патента: US20210123972A1. Автор: Koji Suzuki,Masaaki Tanimura. Владелец: Renesas Electronics Corp. Дата публикации: 2021-04-29.

Memory controllers and operating methods thereof, memory systems, and electronic devices

Номер патента: US20240160381A1. Автор: Zhenran Lu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-05-16.

Memory controller and operation method thereof, memory system and electronic device

Номер патента: US20240160385A1. Автор: Zhenran Lu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-05-16.

Composite grating and manufacturing method therefor, diffractive optical waveguide, and electronic device

Номер патента: EP4246038A1. Автор: Zhuoyong Deng. Владелец: Huawei Technologies Co Ltd. Дата публикации: 2023-09-20.

Semiconductor device and manufacture thereof

Номер патента: US20190284044A1. Автор: Guangcai Fu. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2019-09-19.

Method for controlling re-writing operation for memory cell in semiconductor integrated circuit, semiconductor integrated circuit, semiconductor device equpped with many of the semiconductor integrated circuits, and electronic apparatus using the semiconductor device

Номер патента: US20020015325A1. Автор: Akira Maruyama. Владелец: Seiko Epson Corp. Дата публикации: 2002-02-07.

Method for supplying reference potential to sense amplifier circuit in semiconductor integrated circuit, semiconductor integrated circuit, semiconductor device equipped with many of the semiconductor integrated circuits, and electronic apparatus using the simconductor device

Номер патента: US20020015324A1. Автор: Akira Maruyama. Владелец: Seiko Epson Corp. Дата публикации: 2002-02-07.

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Номер патента: EP4386395A1. Автор: VISWANATHAN Vaiyapuri,Amit Gupta,Sivakumar Nadarajan,Mohamed Sathik Mohamed Halick. Владелец: Rolls Royce PLC. Дата публикации: 2024-06-19.

Method of testing semiconductor devices and system for testing semiconductor devices

Номер патента: US20180188311A1. Автор: Oh Song Kwon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-07-05.

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Номер патента: US20180265352A1. Автор: Guangcai Fu. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2018-09-20.

Semiconductor device and manufacture thereof

Номер патента: US10351421B2. Автор: Guangcai Fu. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2019-07-16.

Semiconductor device inspection method and semiconductor device inspection apparatus

Номер патента: EP4148438A1. Автор: Tomonori Nakamura,Akira Shimase,Shigeru EURA,Norimichi Chinone. Владелец: Hamamatsu Photonics KK. Дата публикации: 2023-03-15.

Dynamic trim selection based on operating voltage levels for semiconductor devices and associated methods and systems

Номер патента: US20220238166A1. Автор: James S. Rehmeyer,Christopher G. Wieduwilt. Владелец: Micron Technology Inc. Дата публикации: 2022-07-28.

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Номер патента: US20240192263A1. Автор: VISWANATHAN Vaiyapuri,Sivakumar Nadarajan,Amit K. Gupta,Mohamed Sathik Mohamed Halick. Владелец: Rolls Royce PLC. Дата публикации: 2024-06-13.

Supply voltage distribution system with reduced resistance for semiconductor devices

Номер патента: US20120081987A1. Автор: Donghyun Seo,Jaeyong Cha. Владелец: Individual. Дата публикации: 2012-04-05.

Structure and formation method of semiconductor device structure

Номер патента: US09834435B1. Автор: Ping-Yin Liu,Xin-Hua Huang,Jung-Huei Peng,Yeong-Jyh Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-12-05.

Semiconductor device and device for a semiconductor device

Номер патента: US09576684B1. Автор: Jae Il Kim,Seung Geun Baek,Don Hyun Choi. Владелец: SK hynix Inc. Дата публикации: 2017-02-21.

On-demand table model for semiconductor device evaluation

Номер патента: US20130116985A1. Автор: TONG Li,Peter Feldmann,David W. Winston,Ali Sadigh,Calvin J. Bittner,Richard D. Kimmel. Владелец: International Business Machines Corp. Дата публикации: 2013-05-09.

Managing data reliability in semiconductor devices

Номер патента: US12067267B2. Автор: Shih-Chou Juan,Wei-Yan Jang. Владелец: Macronix International Co Ltd. Дата публикации: 2024-08-20.

A method for predicting a lifetime of a power semiconductor device

Номер патента: EP4417984A1. Автор: Michal Orkisz,Marcin Firla,Erald Pjetri. Владелец: ABB Schweiz AG. Дата публикации: 2024-08-21.

Semiconductor device and semiconductor system

Номер патента: US20160254033A1. Автор: Myung Hwan Lee. Владелец: SK hynix Inc. Дата публикации: 2016-09-01.

A method for predicting a lifetime of a power semiconductor device

Номер патента: WO2024175541A1. Автор: Michal Orkisz,Marcin Firla,Erald Pjetri. Владелец: ABB Schweiz AG. Дата публикации: 2024-08-29.

Semiconductor device and semiconductor system

Номер патента: US09478260B2. Автор: Myung Hwan Lee. Владелец: SK hynix Inc. Дата публикации: 2016-10-25.

Color filter substrate and electro-optical device, manufacturing method for color filter substrate and manufacturing method for electro-optical device, and electronic equipment

Номер патента: US20070195242A1. Автор: Tomoyuki Nakano,Keiji Takizawa. Владелец: Individual. Дата публикации: 2007-08-23.

Method for estimating the end of lifetime for a power semiconductor device

Номер патента: EP2724170A1. Автор: Bjørn Rannestad,Paul Bach Thogersen. Владелец: KK-ELECTRONIC AS. Дата публикации: 2014-04-30.

Semiconductor devices and semiconductor systems including the same

Номер патента: US09851903B2. Автор: Young Jun YOON. Владелец: SK hynix Inc. Дата публикации: 2017-12-26.

Method for estimating the end of lifetime for a power semiconductor device

Номер патента: US09529037B2. Автор: Bjørn Rannestad,Paul Bach Thogersen. Владелец: Kk Wind Solutions As. Дата публикации: 2016-12-27.

Semiconductor system including semiconductor device for performing defective analysis

Номер патента: US12131791B2. Автор: Byung Goo CHO. Владелец: SK hynix Inc. Дата публикации: 2024-10-29.

Negative photosensitive resin composition, cured film, cured film manufacturing method, semiconductor device, laminated body manufacturing method, semiconductor device manufacturing method, and polyimide precursor

Номер патента: TWI728137B. Автор: 吉田健太,岩井悠,渋谷明規. Владелец: 日商富士軟片股份有限公司. Дата публикации: 2021-05-21.

Semiconductor device and semiconductor integrated circuit

Номер патента: US09837162B2. Автор: Takafumi Noguchi,Atsuo Yoneyama,Masayuki KAWAE. Владелец: Renesas Electronics Corp. Дата публикации: 2017-12-05.

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Номер патента: US20190355397A1. Автор: Saito Toshihiko,ISHIZU Takahiko. Владелец: . Дата публикации: 2019-11-21.

Semiconductor device

Номер патента: US20200133727A1. Автор: Yasuo Sasaki. Владелец: Renesas Electronics Corp. Дата публикации: 2020-04-30.

And a wiring method for disposing a semiconductor device that can be reconstructed, a program thereof, and a wiring device

Номер патента: TWI576850B. Автор: Masayuki Satou. Владелец: Taiyo Yuden Kk. Дата публикации: 2017-04-01.

Microlens array, manufacturing method thereof, optical device and electronic device

Номер патента: US20020141067A1. Автор: ATSUSHI Takakuwa,Mutsumi Tamura. Владелец: Individual. Дата публикации: 2002-10-03.

Liquid crystal device, manufacturing method of liquid crystal device, and electronic apparatus including the liquid crystal device

Номер патента: US20080137011A1. Автор: Kosuke Chidate. Владелец: Seiko Epson Corp. Дата публикации: 2008-06-12.

Electro-optical device, manufacturing method for electro-optical device, and electronic apparatus

Номер патента: US20210157194A1. Автор: Satoshi Ito. Владелец: Seiko Epson Corp. Дата публикации: 2021-05-27.

System and method for accelerated degradation testing of semiconductor devices

Номер патента: US5381103A. Автор: John A. Edmond,Calvin H. Carter, Jr.,Douglas A. Asbury,Douglas G. Waltz. Владелец: Cree Research Inc. Дата публикации: 1995-01-10.

Semiconductor testing apparatus and method for optimizing a wait time until stabilization of semiconductor device output signal

Номер патента: US6895548B2. Автор: Masatsugu Kitada,Motoyuki Katayama,Akiyoshi Kuramoto,Tatsuhisa Nii. Владелец: Toshiba Corp. Дата публикации: 2005-05-17.

Display panel, manufacturing method thereof, display device, and electronic device

Номер патента: US20240272341A1. Автор: Pei-Hsun Wu,Chu-Jung Lin. Владелец: Interface Optoelectronics Wuxi Co Ltd. Дата публикации: 2024-08-15.

Semiconductor device, refreshing method thereof, memory system, and electronic instrument

Номер патента: US6538948B2. Автор: Koichi Mizugaki. Владелец: Seiko Epson Corp. Дата публикации: 2003-03-25.

Semiconductor device, refreshing method thereof, memory system, and electronic instrument

Номер патента: US6804161B2. Автор: Koichi Mizugaki. Владелец: Seiko Epson Corp. Дата публикации: 2004-10-12.

Mask data correction method, photomask manufacturing method, computer program, optical image prediction method, resist pattern shape prediction method, and semiconductor device manufacturing method

Номер патента: TW200540662A. Автор: Daisuke Kawamura,Kazuya Fukuhara,Shoji Mimotogi. Владелец: Toshiba Kk. Дата публикации: 2005-12-16.

Electronic atomization heating battery assembly and electronic atomization heating device with reusable component

Номер патента: US20230284684A1. Автор: YU HUANG,Huabing Li,ZhongYuan LAI. Владелец: Luxshare Precision Industry Co Ltd. Дата публикации: 2023-09-14.

Foldable display panel and driving method thereof, display device and electronic apparatus

Номер патента: US20220319369A1. Автор: Ke Liu,Ling Shi,Yunhao Wang,Xiaoqi Ding,Yanqiang WANG. Владелец: Chengdu BOE Optoelectronics Technology Co Ltd. Дата публикации: 2022-10-06.

Electronic device with object guiding function and an object guiding method thereof

Номер патента: US20100286911A1. Автор: Chao-Kuang Yang. Владелец: Acer Inc. Дата публикации: 2010-11-11.

Cooling method of power semiconductor devices

Номер патента: RU2710025C2. Автор: Дмитрий Валерьевич Хачатуров. Владелец: Дмитрий Валерьевич Хачатуров. Дата публикации: 2019-12-24.

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