Methods of manufacturing semiconductor devices
Номер патента: CA1177582A
Опубликовано: 06-11-1984
Автор(ы): Michael J. Lee
Принадлежит: National Research Development Corp of India
Опубликовано: 06-11-1984
Автор(ы): Michael J. Lee
Принадлежит: National Research Development Corp of India
Реферат: ABSTRACT METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES A thin film semiconductor device, for example a transistor, is fabricated by depositing layers of materials of appropriate electrical characteristics on an insulating substrate 1. To manufacture a transistor, firstly an insulating base layer 2 is applied which is then followed by a gate electrode 3, an insulation layer 4 and a semiconductor layer 5. Source and drain electrodes 6 and 7 are then applied and finally a protective layer 8 encapsulates the device. In order to improve the life of the device it is annealed firstly in a reducing atmosphere and then in an oxidising atmosphere.
Method of making silicon-on-sapphire semiconductor devices
Номер патента: US4775641A. Автор: Glenn W. Cullen,Michael T. Duffy. Владелец: General Electric Co. Дата публикации: 1988-10-04.