Method for forming capacitor and semiconductor device.

Method for forming capacitor and semiconductor device

Номер патента: US20230389266A1
Опубликовано: 30-11-2023
Автор(ы): Hai-Han Hung, Min-Hui Chang, Xiaoling Wang
Принадлежит: Changxin Memory Technologies Inc
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Рисунок 1. Взаимосвязь патентов (ближайшие 20).

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Номер патента: US20010028092A1. Автор: Shubneesh Batra,Tyler Lowrey. Владелец: Individual. Дата публикации: 2001-10-11.

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Номер патента: EP2063464A3. Автор: Takayuki Niuya,Ming Hwang,Boyang Lin,Song C. Park. Владелец: Texas Instruments Inc. Дата публикации: 2009-06-17.

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Номер патента: EP2063464B1. Автор: Takayuki Niuya,Ming Hwang,Boyang Lin,Song C. Park. Владелец: Texas Instruments Inc. Дата публикации: 2017-11-29.

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Номер патента: US20150187560A1. Автор: Jeong-Hoon Lee,Hai-Won Kim,Chang-Hun Shin,Seok-Yun Kim. Владелец: Eugene Technology Co Ltd. Дата публикации: 2015-07-02.

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Номер патента: US20220199659A1. Автор: XIAO FAN,Peng Huang,Yuanyuan QUI,Zhenqiang GUO. Владелец: Hua Hong Semiconductor Wuxi Co Ltd. Дата публикации: 2022-06-23.

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Номер патента: US20220359213A1. Автор: Tang-Chin HUNG. Владелец: Panelsemi Corp. Дата публикации: 2022-11-10.

Method for manufacturing semiconductor package using sacrificial layer and semiconductor package manufactured by using thereof

Номер патента: US20240096820A1. Автор: Young Lyong Kim,Hyun Soo Chung,In Hyo HWANG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-03-21.

Method for servering an epitaxially grown semiconductor body, and semiconductor chip

Номер патента: US20210217663A1. Автор: Sven GERHARD,Lars Nähle. Владелец: OSRAM OLED GmbH. Дата публикации: 2021-07-15.

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Номер патента: US20090302433A1. Автор: Koji Akiyama,Shintaro Aoyama,Kazuyoshi Yamazaki. Владелец: Tokyo Electron Ltd. Дата публикации: 2009-12-10.

Method for singulating an assemblage into semiconductor chips, and semiconductor chip

Номер патента: US09728459B2. Автор: Mathias Kaempf. Владелец: OSRAM Opto Semiconductors GmbH. Дата публикации: 2017-08-08.

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Номер патента: US20220393126A1. Автор: Masahiro Takata,Masashi Ono. Владелец: Fujifilm Corp. Дата публикации: 2022-12-08.

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Номер патента: US12119260B2. Автор: YUAN Li. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-10-15.

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Номер патента: RU2767484C1. Автор: Самвел Грантович Тадевосян,Андрей Григорьевич Шелегеда,Михаил Валентинович Хохлов. Владелец: Общество С Ограниченной Ответственностью "Монолит". Дата публикации: 2022-03-17.

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Номер патента: EP4181172A1. Автор: Zhongming Liu. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-05-17.

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Номер патента: US20090077509A1. Автор: Nan Soon CHOI. Владелец: Dongbu HitekCo Ltd. Дата публикации: 2009-03-19.

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Номер патента: US20090127669A1. Автор: Yoshihiro Hayashi,Hironori Yamamoto,Fuminori Ito. Владелец: NEC Corp. Дата публикации: 2009-05-21.

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Номер патента: US20220199437A1. Автор: YOEL Feler,Roie VOLKOVICH,Liran Yerushalmi,Renan MILO,Moran Zaberchik,David Izraeli. Владелец: KLA Tencor Corp. Дата публикации: 2022-06-23.

Semiconductor device, method for fabricating the same, and memory system including the semiconductor device

Номер патента: US09786785B2. Автор: Seok-jun Won,Ji-Hye Yi,Kook-Tae KIM,Young-Tak Kim,Ho-Sung Son,Chul-Woong Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-10-10.

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Номер патента: US10056452B2. Автор: Bo Zhang,Jinping Zhang,Zehong LI,Hongming Gu,Xunyi SONG,Wenlong SONG,Youbiao ZOU. Владелец: Electronic And Information Engineering In Dongguan Uestc. Дата публикации: 2018-08-21.

Method for manufacturing vertical super junction drift layer of power semiconductor devices

Номер патента: US20160315142A1. Автор: Bo Zhang,Jinping Zhang,Zehong LI,Hongming Gu,Xunyi SONG,Wenlong SONG,Youbiao ZOU. Владелец: Electronic And Information Engineering In Dongguan Uestc. Дата публикации: 2016-10-27.

Method for forming storage node contact structure and semiconductor structure

Номер патента: US11871562B2. Автор: Zhen Zhou,Weiping BAI,Erxuan PING,Lingguo ZHANG. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-01-09.

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Номер патента: US20220208772A1. Автор: Zhen Zhou,Weiping BAI,Erxuan PING,Lingguo ZHANG. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2022-06-30.

Apparatuses and methods for extracting defect depth information and methods of improving semiconductor device manufacturing processes using defect depth information

Номер патента: US20140307052A1. Автор: Byoung-Ho Lee,Jeong-Ho Ahn,Dong-ryul Lee,Jong-Cheon Sun,Dong-Chul Ihm,Soo-bok Chin. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2014-10-16.

Group iii nitride semiconductor single crystal, method for producing the same, self-standing substrate, and semiconductor device

Номер патента: US20140070370A1. Автор: Shiro Yamazaki,Miki Moriyama. Владелец: Toyoda Gosei Co Ltd. Дата публикации: 2014-03-13.

Method for manufacturing a marked single-crystalline substrate and semiconductor device with marking

Номер патента: US9048244B2. Автор: Thomas Popp. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2015-06-02.

Method for Manufacturing a Marked Single-Crystalline Substrate and Semiconductor Device with Marking

Номер патента: US20150037964A1. Автор: Thomas Popp. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2015-02-05.

Composition for curable resin, cured product of said composition, production method for said composition and said cured product, and semiconductor device

Номер патента: US11897998B2. Автор: Yoshinori Nishitani,Masaki Minami,Tatsuki SATO. Владелец: Eneos Corp. Дата публикации: 2024-02-13.

Multi-wavelength selection method for overlay measurement, and overlay measurement method and semiconductor device manufacturing method using multi-wavelengths

Номер патента: US20240134290A1. Автор: Jeongjin Lee,Chan Hwang,Seungyoon LEE,Inbeom YIM,Junseong Yoon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-04-25.

Method for manufacturing soi structure in desired region of a semiconductor device

Номер патента: US20090186463A1. Автор: Min Jung SHIN. Владелец: Hynix Semiconductor Inc. Дата публикации: 2009-07-23.

Method for forming epitaxial Co self-align silicide for semiconductor device

Номер патента: US6077750A. Автор: Jeong Soo Byun,Dong Kyun Sohn. Владелец: LG Semicon Co Ltd. Дата публикации: 2000-06-20.

Method for manufacturing a semiconductor light-emitting device and semiconductor light-emitting device

Номер патента: US20090090923A1. Автор: Masahiro Murayama. Владелец: ROHM CO LTD. Дата публикации: 2009-04-09.

Method for producing a plurality of semiconductor chips and semiconductor chip

Номер патента: US20180069147A1. Автор: Stefan Illek,Dominik Scholz,Norwin von Malm,Lutz Hoeppel,Alexander F. Pfeuffer,Isabel OTTO. Владелец: OSRAM Opto Semiconductors GmbH. Дата публикации: 2018-03-08.

Method for forming a mental wiring pattern on a semiconductor device

Номер патента: US6296988B1. Автор: Bok-Hyung Lee. Владелец: Amkor Technology Inc. Дата публикации: 2001-10-02.

Method for singulating an assemblage into semiconductor chips, and semiconductor chip

Номер патента: US20150303112A1. Автор: Mathias Kaempf. Владелец: OSRAM Opto Semiconductors GmbH. Дата публикации: 2015-10-22.

Method for singulating an assemblage into semiconductor chips, and semiconductor chip

Номер патента: US20180047628A1. Автор: Mathias Kaempf. Владелец: OSRAM Opto Semiconductors GmbH. Дата публикации: 2018-02-15.

Method for Producing a Plurality of Semiconductor Chips and Semiconductor Chip

Номер патента: US20170309481A1. Автор: Korbinian Perzlmaier,Juergen Off,Tobias Gotschke. Владелец: OSRAM Opto Semiconductors GmbH. Дата публикации: 2017-10-26.

Method for forming a fine contact hole in a semiconductor device

Номер патента: US5767019A. Автор: Sang Wook Kim,Hae Jung Lee. Владелец: Hyundai Electronics Industries Co Ltd. Дата публикации: 1998-06-16.

Method for Forming Trench Isolated Capacitor and Substrate Contact

Номер патента: US20180061932A1. Автор: Hideaki Kawahara,Sameer Pendharkar,Binghua Hu. Владелец: Texas Instruments Inc. Дата публикации: 2018-03-01.

Method for dividing a composite into semiconductor chips, and semiconductor chip

Номер патента: US20160204032A1. Автор: Mathias Kaempf. Владелец: OSRAM Opto Semiconductors GmbH. Дата публикации: 2016-07-14.

Method for dividing a composite into semiconductor chips, and semiconductor chip

Номер патента: US9873166B2. Автор: Mathias Kaempf. Владелец: OSRAM Opto Semiconductors GmbH. Дата публикации: 2018-01-23.

Methods for forming assemblies and packages that include stacked semiconductor devices separated a distance defined by adhesive material interposed therebetween

Номер патента: US20040157375A1. Автор: James Derderian. Владелец: Individual. Дата публикации: 2004-08-12.

Method for forming photo mask for use in fabricating semiconductor device

Номер патента: US5679499A. Автор: Atsushi Yamamori. Владелец: NEC Corp. Дата публикации: 1997-10-21.

Method for depositing si-containing film, insulator film, and semiconductor device

Номер патента: US20100061915A1. Автор: Yoshitaka Hamada. Владелец: Shin Etsu Chemical Co Ltd. Дата публикации: 2010-03-11.

Methods for forming contacts for dual stress liner CMOS semiconductor devices

Номер патента: US7816271B2. Автор: Theodorus E. Standaert,Kyoung Woo Lee,Ja Hum Ku,WanJae Park,Chong Kwang Chang. Владелец: International Business Machines Corp. Дата публикации: 2010-10-19.

Resist pattern thickening material, process for forming resist pattern, and process for manufacturing semiconductor device

Номер патента: US7364829B2. Автор: Takahisa Namiki,Koji Nozaki,Junichi Kon,Miwa Kozawa. Владелец: Fujitsu Ltd. Дата публикации: 2008-04-29.

Method for forming hardmask formation by hybrid materials in semiconductor device

Номер патента: US11948843B2. Автор: Chung-Ting Ko,Sung-En Lin,Chi-On CHUI. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-04-02.

Method for manufacturing high-heat-dissipation mixed substrate, and semiconductor structure

Номер патента: US20240079287A1. Автор: Xiaowei Xu,Xianming Chen,Gao HUANG,Benxia Huang,Juchen HUANG,Chaobiao Qin. Владелец: Zhuhai Access Semiconductor Co Ltd. Дата публикации: 2024-03-07.

Method for manufacturing a multi-layer wiring structure of a semiconductor device

Номер патента: US5851917A. Автор: Sang-In Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 1998-12-22.

Manufacturing method for filling a trench or contact hole in a semiconductor device

Номер патента: US5824562A. Автор: Tai-su Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 1998-10-20.

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Номер патента: US20200312687A1. Автор: YOEL Feler,Roie VOLKOVICH,Liran Yerushalmi,Renan MILO,Moran Zaberchik,David Izraeli. Владелец: KLA Tencor Corp. Дата публикации: 2020-10-01.

Method for inspecting pattern and an apparatus for manufacturing a semiconductor device using the same

Номер патента: US20160275663A1. Автор: Seunghune YANG,Kiho Yang,Kaiyuan Chi. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-09-22.

Apparatuses and methods for coupling contact pads to a circuit in a semiconductor device

Номер патента: US20190304855A1. Автор: Masahiko Igeta,Yoshimi Terui. Владелец: Micron Technology Inc. Дата публикации: 2019-10-03.

Apparatuses and methods for coupling contact pads to a circuit in a semiconductor device

Номер патента: US20190333830A1. Автор: Masahiko Igeta,Yoshimi Terui. Владелец: Micron Technology Inc. Дата публикации: 2019-10-31.

Apparatuses and methods for coupling contact pads to a circuit in a semiconductor device

Номер патента: US10847433B2. Автор: Masahiko Igeta,Yoshimi Terui. Владелец: Micron Technology Inc. Дата публикации: 2020-11-24.

Method for providing a self-aligned pad protection in a semiconductor device

Номер патента: US20150357234A1. Автор: Michael Rogalli,Wolfgang Lehnert. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2015-12-10.

System and method for automatically identifying defect-based test coverage gaps in semiconductor devices

Номер патента: EP4248490A1. Автор: John Robinson,David W. Price,Robert J. Rathert,Oreste Donzella,Mike Von den Hoff,Barry Saville,Thomas Groos,Justin LACH,Narayani Narasimhan,Chet LENOX,Kara SHERMAN,Teng Song LIM. Владелец: KLA Corp. Дата публикации: 2023-09-27.

Method for producing a semiconductor body, semiconductor body and power semiconductor device

Номер патента: WO2024056185A1. Автор: Yulieth Cristina Arango,Giovanni ALFIERI. Владелец: Hitachi Energy Ltd. Дата публикации: 2024-03-21.

Method and apparatus for a direct buried strap for same level interconnections for semiconductor devices

Номер патента: EP1292979A2. Автор: Michael Stetter,Frank Grellner. Владелец: Infineon Technologies North America Corp. Дата публикации: 2003-03-19.

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Номер патента: EP2609638B1. Автор: Matthieu Jamet,Andre Barski. Владелец: Commissariat a lEnergie Atomique et aux Energies Alternatives CEA. Дата публикации: 2014-12-03.

Method for forming semiconductor structures and semiconductor structure

Номер патента: US12089400B2. Автор: Minki HONG. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-09-10.

A method for forming capacitor charge storage electrodes in semiconductor devices

Номер патента: KR100490656B1. Автор: 박찬동. Владелец: 주식회사 하이닉스반도체. Дата публикации: 2006-06-01.

Method for forming bit line contact structure and semiconductor structure

Номер патента: WO2022148004A1. Автор: 石夏雨. Владелец: 长鑫存储技术有限公司. Дата публикации: 2022-07-14.

Semiconductor device and method of manufacturing the same and semiconductor manufacturing device

Номер патента: US8815652B2. Автор: Fumihiko Inoue,Kentaro Sera. Владелец: SPANSION LLC. Дата публикации: 2014-08-26.

Method for manufacturing semiconductor device

Номер патента: US20200144500A1. Автор: Soo Gil Kim,Joo Young MOON,Young Seok Ko. Владелец: SK hynix Inc. Дата публикации: 2020-05-07.

Method for manufacturing semiconductor device

Номер патента: US20200403155A1. Автор: Soo Gil Kim,Joo Young MOON,Young Seok Ko. Владелец: SK hynix Inc. Дата публикации: 2020-12-24.

Method for manufacturing a dynamic random access memory cell

Номер патента: US5270239A. Автор: Jae K. Kim,Wi S. Min. Владелец: Hyundai Electronics Industries Co Ltd. Дата публикации: 1993-12-14.

Manufacturing method for a semiconductor device

Номер патента: US11462627B2. Автор: Xiang Peng,Haoyu Chen,Qiwei Wang. Владелец: Shanghai Huali Microelectronics Corp. Дата публикации: 2022-10-04.

Method for forming semiconductor device

Номер патента: US09960167B1. Автор: Yu-Chieh Lin,Li-Wei Feng,Ying-Chiao Wang,Chien-Ting Ho. Владелец: Fujian Jinhua Integrated Circuit Co Ltd. Дата публикации: 2018-05-01.

Method for protecting gate edges from charge gain/loss in semiconductor device

Номер патента: US6808996B1. Автор: Yu Sun,Mark T. Ramsbey,Sameer S. Haddad,Chi Chang,Tuan D. Pham,Angela T. Hui. Владелец: Advanced Micro Devices Inc. Дата публикации: 2004-10-26.

Method for producing a plurality of semiconductor lasers and semiconductor laser

Номер патента: US20240047935A1. Автор: Sven GERHARD,Lars Nähle. Владелец: Ams Osram International GmbH. Дата публикации: 2024-02-08.

Dopant solution for conductive polymer, monomer liquid for producing conductive polymer, conductive composition and method for producing same, and electrolytic capacitor and method for producing same

Номер патента: US20240254317A1. Автор: Megumi Seki,Yuhei Tsurumoto. Владелец: Tayca Corp. Дата публикации: 2024-08-01.

Ultrathin graphene piece, apparatus for preparing ultrathin graphene pieces, method for preparing ultrathin graphene pieces, capacitor, and method of manufacturing capacitor

Номер патента: US20180244526A1. Автор: QIAN Cheng,Jie Tang,Norio Shinya,Luchang Qin. Владелец: NATIONAL INSTITUTE FOR MATERIALS SCIENCE. Дата публикации: 2018-08-30.

Method for forming a capacitor of a semiconductor device

Номер патента: US20030109103A1. Автор: Kyong Kim,Ho-Jung Sun. Владелец: Hynix Semiconductor Inc. Дата публикации: 2003-06-12.

Method for producing a plurality of semiconductor lasers, and semiconductor laser

Номер патента: US20230420908A1. Автор: Sven GERHARD. Владелец: Ams Osram International GmbH. Дата публикации: 2023-12-28.

Method for manufacturing capacitor array, capacitor array, and semiconductor device

Номер патента: US20230231007A1. Автор: Liutao ZHOU,Shuo Pan. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-07-20.

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Номер патента: US20160104912A1. Автор: Junichi Inahara. Владелец: Individual. Дата публикации: 2016-04-14.

Method for forming semiconductor device and semiconductor device

Номер патента: US20230015279A1. Автор: Deyuan Xiao,GuangSu SHAO,Weiping BAI. Владелец: Beijing Superstring Academy of Memory Technology. Дата публикации: 2023-01-19.

Semiconductor structure forming method and semiconductor structure

Номер патента: EP4195253A1. Автор: Jingwen Lu. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-06-14.

Semiconductor structure including capacitor and method for forming the same

Номер патента: US12133373B2. Автор: Yu-Cheng Tung,Janbo Zhang. Владелец: Fujian Jinhua Integrated Circuit Co Ltd. Дата публикации: 2024-10-29.

Method for formation of an ultra-thin film and semiconductor device containing such a film

Номер патента: US20050170531A1. Автор: Bum-Ki Moon. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2005-08-04.

Method for manufacturing oxide dielectric device, and memory and semiconductor device usign the device

Номер патента: EP0957516A1. Автор: Takaaki Suzuki,Toshihide Room 204 Royal Park NABATAME,Kazutoshi 1993-42 Ohaza Fukuda HIGASHIYAMA. Владелец: HITACHI LTD. Дата публикации: 1999-11-17.

Method for manufacturing oxide dielectric device, and memory and semiconductor device usign the device

Номер патента: KR100315264B1. Автор: 스즈키다카아키,나바타메도시히데,히가시야마가즈토시. Владелец: 가나이 쓰도무. Дата публикации: 2001-11-26.

Method for manufacturing oxide dielectric device, and memory and semiconductor device usign the device

Номер патента: WO1998008255A1. Автор: Takaaki Suzuki,Toshihide Nabatame,Kazutoshi Higashiyama. Владелец: Hitachi, Ltd.. Дата публикации: 1998-02-26.

CAPACITOR AND REGISTER OF SEMICONDUCTOR DEVICE, MEMORY SYSTEM INCLUDING THE SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE

Номер патента: US20150050796A1. Автор: PARK Sun Mi,Oh Sang Hyun,LEE Sang Bum. Владелец: . Дата публикации: 2015-02-19.

Method for simultaneous formation of integrated capacitor and fuse

Номер патента: US6495426B1. Автор: Yauh-Ching Liu,Chuan-Cheng Cheng. Владелец: LSI Logic Corp. Дата публикации: 2002-12-17.

Parallel capacitor and high-frequency semiconductor device

Номер патента: JP6181097B2. Автор: 一考高木. Владелец: Toshiba Corp. Дата публикации: 2017-08-16.

Method for forming a semiconductor device with a single-sided buried strap

Номер патента: US20080268590A1. Автор: Neng-Tai Shih,Ming-Cheng Chang. Владелец: Nanya Technology Corp. Дата публикации: 2008-10-30.

Method for Forming a Ruthenium Film

Номер патента: US20120161282A1. Автор: Vishwanath Bhat,Dan Gealy,Vassil Antonov. Владелец: Individual. Дата публикации: 2012-06-28.

Method for forming a capacitor in a semiconductor device

Номер патента: US20020094657A1. Автор: Woo-Seok Yang. Владелец: Hynix Semiconductor Inc. Дата публикации: 2002-07-18.

Method for forming interlayer insulation film in semiconductor device

Номер патента: US7160810B2. Автор: Sang Wook Ryu,Kang Sup Shin. Владелец: Hynix Semiconductor Inc. Дата публикации: 2007-01-09.

Method for forming interlayer insulation film in semiconductor device

Номер патента: US20050142848A1. Автор: Kang Shin,Sang Ryu. Владелец: Individual. Дата публикации: 2005-06-30.

Method of forming interconnectings in semiconductor devices

Номер патента: US20020090810A1. Автор: Mario Napolitano. Владелец: STMICROELECTRONICS SRL. Дата публикации: 2002-07-11.

Method for forming low dielectric constant layer

Номер патента: US20020132494A1. Автор: Wen-Yi Hsieh. Владелец: United Microelectronics Corp. Дата публикации: 2002-09-19.

Passivation layer structure of semiconductor device and method for forming the same

Номер патента: US20140042440A1. Автор: Wen-Ching Sun,Tzer-Shen Lin,sheng-min Yu. Владелец: Industrial Technology Research Institute ITRI. Дата публикации: 2014-02-13.

Method for forming metal chalcogenide thin films on a semiconductor device

Номер патента: US09711396B2. Автор: Qi Xie,Jan Willem Maes,Michael Eugene Givens,Fu Tang,Jacob Huffman Woodruff. Владелец: ASM IP Holding BV. Дата публикации: 2017-07-18.

Semiconductor device having groove and method of fabricating the same

Номер патента: US20030068875A1. Автор: Nak-Jin Son. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2003-04-10.

Methods for reducing vibration of semiconductor manufacturing apparatuses and semiconductor manufacturing apparatuses

Номер патента: US20240247700A1. Автор: Chien Ting Lin,Ker-Hsun LIAO,Wei-Ming Wang,Yi-Chen Ho,Chih Ping Liao,Chi-Hsun Lin,Jie-Ying YANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-25.

Bipolar shell resurfaced perovskite quantum dots and methods for producing same

Номер патента: WO2022100636A1. Автор: Edward Sargent,Peter Chun,Makhsud SAIDAMINOV,Sjoerd HOOGLAND,Fanglong YUAN,Quan LYU,Giovanni Francesco COTELLA,Yitong DONG,Ya-Kun WANG. Владелец: Quan LYU. Дата публикации: 2022-05-19.

Semiconductor wafer, method for separating the semiconductor wafer, semiconductor chip, and semiconductor package including the semiconductor chip

Номер патента: US20220013418A1. Автор: Hyun Chul Seo. Владелец: SK hynix Inc. Дата публикации: 2022-01-13.

Method of making a cmos semiconductor device using a stressed silicon-on-insulator (soi) wafer

Номер патента: US20180323301A1. Автор: Qing Liu,Nicolas Loubet. Владелец: STMicroelectronics lnc USA. Дата публикации: 2018-11-08.

Method of making a cmos semiconductor device using a stressed silicon-on-insulator (soi) wafer

Номер патента: US20160268433A1. Автор: Qing Liu,Nicolas Loubet. Владелец: STMicroelectronics lnc USA. Дата публикации: 2016-09-15.

Refractory metal nitride capped electrical contact and method for frabricating same

Номер патента: US20110049720A1. Автор: Sadiki Jordan. Владелец: International Rectifier Corp USA. Дата публикации: 2011-03-03.

Device architecture and method for precision enhancement of vertical semiconductor devices

Номер патента: US09997455B2. Автор: Thomas E. Harrington, III. Владелец: D3 Semiconductor LLC. Дата публикации: 2018-06-12.

Biased reactive refractory metal nitride capped contact of group III-V semiconductor device

Номер патента: US9484425B2. Автор: Sadiki Jordan. Владелец: Infineon Technologies North America Corp. Дата публикации: 2016-11-01.

Organic silica film and method for forming the same, composition for forming insulating film of semiconductor device and method for manufacturing the same, and wiring structure and semiconductor device

Номер патента: JPWO2007088908A1. Автор: 達也山中,恭志中川,将宏秋山,輝一小久保,洋平野辺,小久保　輝一,秋山　将宏. Владелец: JSR Corp. Дата публикации: 2009-06-25.

Stack, method for treating substrate material, temporary fixing composition, and semiconductor device

Номер патента: US20160375652A1. Автор: Hiroyuki Ishii,Katsumi Inomata,Torahiko YAMAGUCHI. Владелец: JSR Corp. Дата публикации: 2016-12-29.

Method for forming epitaxial source/drain features and semiconductor devices fabricated thereof

Номер патента: US20230335607A1. Автор: Chih-Hao Wang,Kuo-Cheng Chiang,Zhi-Chang Lin,Jung-Hung CHANG,Shih-Cheng Chen,Chien Ning Yao. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-10-19.

Apparatus and methods for sensing long wavelength light

Номер патента: US12113086B2. Автор: Ying-Hao Chen,Yun-Wei Cheng,Chun-Hao Chou,Kuo-Cheng Lee. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-08.

Methods for fabricating an STI film of a semiconductor device

Номер патента: US7217633B2. Автор: Geon-Ook Park. Владелец: Dongbu Electronics Co Ltd. Дата публикации: 2007-05-15.

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Номер патента: US20220165926A1. Автор: YE Yuan,Wei Luo,Yongde Li,Junjie Kang,Xinqiang Wang,Weiyun WANG,Houjin WANG. Владелец: Songshan Lake Materials Laboratory. Дата публикации: 2022-05-26.

Electronic device, semiconductor device, packaging structure, bracket and method of manufacturing the bracket

Номер патента: US11881548B2. Автор: YE Yuan,Wei Luo,Yongde Li,Junjie Kang,Xinqiang Wang,Weiyun WANG,Houjin WANG. Владелец: Songshan Lake Materials Laboratory. Дата публикации: 2024-01-23.

Method for forming metal wire using titanium film in semiconductor device having contact holes

Номер патента: TW569383B. Автор: Heon-Do Kim. Владелец: Hyundai Electronics Ind. Дата публикации: 2004-01-01.

Methods for fabricating an STI film of a semiconductor device

Номер патента: US20050142805A1. Автор: Geon-Ook Park. Владелец: DongbuAnam Semiconductor Inc. Дата публикации: 2005-06-30.

High-voltage semiconductor device and method of manufacturing the same

Номер патента: US20070155107A1. Автор: Choul Ko. Владелец: Dongbu Electronics Co Ltd. Дата публикации: 2007-07-05.

Method of manufacturing high-voltage semiconductor device and low-voltage semiconductor device

Номер патента: US7910466B2. Автор: Choul Joo Ko. Владелец: Dongbu Electronics Co Ltd. Дата публикации: 2011-03-22.

Semiconductor device and method for manufacturing the same, and semiconductor package

Номер патента: US11948920B2. Автор: Wen-Chih Chiou,Yung-Chi Lin,Tsang-Jiuh Wu,Chia-Yin Chen,Yang-Chih Hsueh,Yan-Zuo Tsai,I-Chun Hsu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-04-02.

Shielding structure for a vertical iii-nitride semiconductor device

Номер патента: EP4391065A1. Автор: Hu Liang,Stefaan Decoutere,Karen GEENS. Владелец: Interuniversitair Microelektronica Centrum vzw IMEC. Дата публикации: 2024-06-26.

Etching solution and method for selectively removing silicon nitride during manufacture of a semiconductor device

Номер патента: WO2020185762A8. Автор: Wen Dar Liu,Yi-Chia Lee,Jhih Kuei GE. Владелец: Versum Materials US, LLC. Дата публикации: 2024-05-02.

Shielding structure for a vertical iii-nitride semiconductor device

Номер патента: WO2024132524A1. Автор: Hu Liang,Jens Baringhaus,Kevin Dannecker,Stefaan Decoutere,Karen GEENS. Владелец: IMEC VZW. Дата публикации: 2024-06-27.

Method and apparatus for forming an interlayer insulating film, and semiconductor device

Номер патента: TW543115B. Автор: Kazuo Maeda. Владелец: Canon Sales Co Inc. Дата публикации: 2003-07-21.

Semiconductor device and method

Номер патента: US12033940B2. Автор: Jhon Jhy Liaw,Ren-Fen Tsui,Dian-Sheg Yu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-09.

Method for evaulating of molding material with dams formed on a semiconductor substrate to define slits for capturing the fillers contained in the molding material

Номер патента: US20020088974A1. Автор: Masaru Takahara. Владелец: Individual. Дата публикации: 2002-07-11.

Semiconductor device and method

Номер патента: US09978680B2. Автор: Jhon Jhy Liaw,Ren-Fen Tsui,Dian-Sheg Yu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-05-22.

Semiconductor device and method

Номер патента: US09666587B1. Автор: Jhon Jhy Liaw,Ren-Fen Tsui,Dian-Sheg Yu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-05-30.

Semiconductor device and method

Номер патента: US11855163B2. Автор: Weng Chang,Cheng-Lung Hung,Hsin-Yi Lee,Chi On Chui. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-12-26.

Semiconductor device and method

Номер патента: US20240113183A1. Автор: Weng Chang,Cheng-Lung Hung,Hsin-Yi Lee,Chi On Chui. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-04-04.

Method for forming a titanium dioxide layer

Номер патента: US6251803B1. Автор: Hsin-Chih Liao,Ming-Kwei Lee. Владелец: Winbond Electronics Corp. Дата публикации: 2001-06-26.

Method for forming align key pattern in semiconductor device

Номер патента: US5578519A. Автор: Yun-hee Cho. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 1996-11-26.

Method for forming interlayer dielectric film for semiconductor device by using polyhedral molecular silsesquioxane

Номер патента: US7470634B2. Автор: Hyeon Jin Shin,Hyun Dam Jeong. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2008-12-30.

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Номер патента: US20230081962A1. Автор: Won Jun Yoon,Jee Hye Park,Dong Woo Kim,Tae Sung Kim,Jin Ho Jeon,Hong Ki PARK,Woo Hoon SUN,Keon Jung LEE. Владелец: Wonik Ips Co Ltd. Дата публикации: 2023-03-16.

Method for producing silicon nitride films and process for fabricating semiconductor devices using said method

Номер патента: EP1548814A3. Автор: Kazutaka Yanagita,Christian Dussarrat,Takeshi Hoshi,Tsuyoshi Saito,Takako Kimura. Владелец: Semiconductor Leading Edge Technologies Inc. Дата публикации: 2009-05-27.

Method for implanting ions to a wafer for manufacturing of semiconductor device and method of fabricating graded junction using the same

Номер патента: TWI278921B. Автор: Sun-Hwan Hwang,Seung-Woo Jin,Kyoung-Bong Rouh. Владелец: Hynix Semiconductor Inc. Дата публикации: 2007-04-11.

Conductive powder formation method, device for forming conductive powder, and method of forming semiconductor device

Номер патента: US20180301375A1. Автор: Kuo-Sheng Chuang,You-Hua Chou. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-10-18.

Etching composition and method for selectively removing silicon nitride during manufacture of a semiconductor device

Номер патента: US12110435B2. Автор: Wen Dar Liu,Yi-Chia Lee,Laisheng SUN,Aiping Wu,Jhih Kuei GE. Владелец: Versum Materials US LLC. Дата публикации: 2024-10-08.

Methods for performing a gate cut last scheme for FinFET semiconductor devices

Номер патента: US09991361B2. Автор: Xintuo Dai,Xusheng Wu,Haigou Huang. Владелец: Globalfoundries Inc. Дата публикации: 2018-06-05.

Composition for forming porous film, porous film and method for producing the same, interlayer insulating film, and semiconductor device

Номер патента: JP3884699B2. Автор: 不二夫八木橋,勝笹子,吉隆濱田,秀夫中川. Владелец: Panasonic Corp. Дата публикации: 2007-02-21.

Method for forming a gate insulating film for semiconductor devices

Номер патента: US6303481B2. Автор: Dong Su Park. Владелец: Hyundai Electronics Industries Co Ltd. Дата публикации: 2001-10-16.

Method for creating a pattern in a material and semiconductor structure processed therewith

Номер патента: TW200532394A. Автор: Greja Johanna Adriana Maria Verheijden,Wingerden Johannes Van,Pascal Henri Leon Bancken. Владелец: Imec Inter Uni Micro Electr. Дата публикации: 2005-10-01.

Resin composition and method for producing same, molding material, packaging container, and semiconductor container

Номер патента: EP4198080A4. Автор: Shinsuke Miyazawa. Владелец: Zeon Corp. Дата публикации: 2024-09-04.

Method for forming an interlayer insulating film, and semiconductor devices

Номер патента: KR100426147B1. Автор: 마에다가즈오. Владелец: 가부시키가이샤 한도타이 프로세스 겐큐쇼. Дата публикации: 2004-04-03.

Method for forming an interlayer insulating film, and semiconductor device

Номер патента: KR100430114B1. Автор: 마에다가즈오. Владелец: 캐논 한바이 가부시끼가이샤. Дата публикации: 2004-05-03.

Method for forming fin field effect transistor and semiconductor device

Номер патента: CN110610859B. Автор: 章勋明,林志翰,杨建伦,陈昭成,张铭庆,高魁佑. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-11-29.

Methods for forming porous insulator structures on semiconductor devices

Номер патента: US7285502B2. Автор: Tongbi Jiang,Warren M. Farnworth. Владелец: Micron Technology Inc. Дата публикации: 2007-10-23.

Method for forming an interlayer insulating film, and semiconductor device

Номер патента: KR100375999B1. Автор: 마에다가즈오. Владелец: 가부시키가이샤 한도타이 프로세스 겐큐쇼. Дата публикации: 2003-03-17.

Method for forming an isolation region in a semiconductor device and resulting structure using a two step oxidation process

Номер патента: US6420241B2. Автор: Jong Choul Kim,Se Aug Jang,Young Bog Kim,In Seok Yeo. Владелец: Hyundai Electronics Industries Co Ltd. Дата публикации: 2002-07-16.

Protective layers formed on semiconductor device components so as to reduce or eliminate the occurrence of delamination thereof and cracking therein

Номер патента: US20040183210A1. Автор: Tongbi Jiang,Shijian Luo,S. Hinkle. Владелец: Individual. Дата публикации: 2004-09-23.

Companion integrated circuit having decoupling capacitor and mobile device having the same

Номер патента: US09648747B2. Автор: Jeong-Sik Yu. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-05-09.

Method of forming beam leads on semiconductor devices and integrated circuits

Номер патента: US3653999A. Автор: Clyde Rhea Fuller. Владелец: Texas Instruments Inc. Дата публикации: 1972-04-04.

Method for manufacturing semiconductor device

Номер патента: US9520483B2. Автор: XINPENG WANG. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2016-12-13.

Method for Forming Sidewall in Forksheet Structure and Forksheet Semiconductor Device

Номер патента: US20230261081A1. Автор: Guangxing Wan,Waisum Wong. Владелец: Huawei Technologies Co Ltd. Дата публикации: 2023-08-17.

Semiconductor Device, a Semiconductor Wafer Structure, and a Method for Forming a Semiconductor Wafer Structure

Номер патента: US20150028456A1. Автор: Wolfgang Wagner,Francisco Javier Santos Rodriguez,Holger Huesken. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2015-01-29.

Method of making a semiconductor device using trench isolation regions to maintain channel stress

Номер патента: US20150099335A1. Автор: Qing Liu,Nicolas Loubet. Владелец: STMicroelectronics lnc USA. Дата публикации: 2015-04-09.

Method For Preparing a GaAS Substrate For A Ferromagnetic Semiconductor, Method for Manufacturing One Such Semiconductor, Resulting Substrate and Semiconductor, And Uses Of Said Semiconductor

Номер патента: US20130168702A1. Автор: Barski André,Jamet Matthieu. Владелец: . Дата публикации: 2013-07-04.

Cyclic Deposition Method for Thin Film Formation, Semiconductor Manufacturing Method, and Semiconductor Device

Номер патента: US20150187560A1. Автор: LEE Jeong-Hoon,KIM Hai-Won,SHIN Chang-Hun,KIM Seok-Yun. Владелец: . Дата публикации: 2015-07-02.

System and method for automatically identifying defect-based test coverage gaps in semiconductor devices

Номер патента: EP4248490A4. Автор: John Robinson,David W Price,Oreste Donzella,Barry Saville,Thomas Groos,Den Hoff Mike Von,Justin LACH,Narayani Narasimhan,Chet LENOX,Kara SHERMAN,Teng Song LIM,Robert J Rathert. Владелец: KLA Corp. Дата публикации: 2024-10-23.

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Номер патента: US20140027823A1. Автор: Lo Chih-Hung,Lee Yao-Jen,Sung Po-Jung,Heh Da-Wei,Hou Fu-Ju,Hsueh Fu-Kuo,Chen Hsiu-Chih. Владелец: NATIONAL APPLIED RESEARCH LABORATORIES. Дата публикации: 2014-01-30.

Group iii nitride semiconductor single crystal, method for producing the same, self-standing substrate, and semiconductor device

Номер патента: US20140070370A1. Автор: Shiro Yamazaki,Miki Moriyama. Владелец: Toyoda Gosei Co Ltd. Дата публикации: 2014-03-13.

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Номер патента: US20220013418A1. Автор: SEO Hyun Chul. Владелец: SK HYNIX INC.. Дата публикации: 2022-01-13.

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Номер патента: US20180164683A1. Автор: Fujiwara Takenori,Tanigaki Yugo. Владелец: Toray Industries, Inc.. Дата публикации: 2018-06-14.

METHOD FOR PACKAGING AT LEAST ONE SEMICONDUCTOR COMPONENT AND SEMICONDUCTOR DEVICE

Номер патента: US20180346327A1. Автор: KRAUSS Andreas,Mingirulli Nicola,Bonasewicz Robert. Владелец: . Дата публикации: 2018-12-06.

METHOD FOR PREVENTING THE CURVATURE OF SEMICONDUCTOR LAYERS AND SEMICONDUCTOR DEVICE FORMED THEREBY

Номер патента: FR2813144A1. Автор: Dong Ho Ahn,Ho Kyu Kang,Geum Jong Bae. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2002-02-22.

Method for mounting semiconductor element to circuit board, and semiconductor device

Номер патента: EP1175138B1. Автор: Hiroyuki Otani,Yoshihiko Yagi. Владелец: Matsushita Electric Industrial Co Ltd. Дата публикации: 2005-08-03.

Method for extending InP semiconductor on silicon substrate and semiconductor device manufactured by same

Номер патента: CN110517948B. Автор: 刘新宇,刘洪刚,常虎东,孙兵,苏永波,丁芃,金智,翟明龙. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2021-12-21.

Method for forming interconnected vertical channel devices and semiconductor structure

Номер патента: EP3404707A1. Автор: Juergen Boemmels. Владелец: Interuniversitair Microelektronica Centrum vzw IMEC. Дата публикации: 2018-11-21.

Method for mounting semiconductor element to circuit board, and semiconductor device

Номер патента: TW398045B. Автор: Hiroyuki Otani,Yoshihiko Yagi. Владелец: Matsushita Electric Ind Co Ltd. Дата публикации: 2000-07-11.

Method for mounting semiconductor element to circuit board, and semiconductor device

Номер патента: KR100395444B1. Автор: 오타니히로유키,야기요시히코. Владелец: 마츠시타 덴끼 산교 가부시키가이샤. Дата публикации: 2003-08-21.

Method for packaging at least one semiconductor component, and semiconductor device

Номер патента: TW201722842A. Автор: 安德烈亞斯克勞斯,尼可拉閔吉魯力,羅伯特波納瑟威克茲. Владелец: 羅伯特博斯奇股份有限公司. Дата публикации: 2017-07-01.

Method for forming self-aligned double pattern, and semiconductor structure

Номер патента: EP4181172A4. Автор: Zhongming Liu. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-12-27.

Method for forming a metal silicide layer in a semiconductor device

Номер патента: US7005373B2. Автор: Kwan-Jong Roh,In-sun Park,Eung-joon Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2006-02-28.

Base sheet for semiconductor module, method for manufacturing base sheet for semiconductor module, and semiconductor module

Номер патента: EP1063699A4. Автор: Koichiro Tsuji,Kunitoshi Yamamoto. Владелец: Nissha Printing Co Ltd. Дата публикации: 2007-07-25.

Laser anneal device, method for inspecting substrate with attached crystallized film, and semiconductor device manufacturing method

Номер патента: WO2018037756A1. Автор: 亮介佐藤,賢一大森,石煥鄭,政志町田. Владелец: 株式会社日本製鋼所. Дата публикации: 2018-03-01.

Apparatus for stacking semiconductor chips, method for manufacturing semiconductor package using the same and semiconductor package manufactured thereby

Номер патента: US20070018295A1. Автор: Dong-Kuk Kim,Min-Ill Kim,Chang-Cheol Lee,Tae-Hoe Hwang,Jae-young Hong. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2007-01-25.

Display, method for driving display, and electronic apparatus

Номер патента: US9312315B2. Автор: Hiroshi Sagawa,Tetsuro Yamamoto,Katsuhide Uchino. Владелец: Sony Corp. Дата публикации: 2016-04-12.

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Номер патента: US20170077107A1. Автор: Iguchi Tadashi. Владелец: KABUSHIKI KAISHA TOSHIBA. Дата публикации: 2017-03-16.

Photo mask set for forming multi-layered interconnection lines and semiconductor device fabricated using the same

Номер патента: KR100519795B1. Автор: 김성진,장승현,남기흠. Владелец: 삼성전자주식회사. Дата публикации: 2005-10-10.

Solar cell and preparation method therefor, method for processing n-type doped silicon film, and semiconductor device

Номер патента: EP3971998A1. Автор: Wei Shan,Xiaoye CHEN,Junbing Zhang. Владелец: JA Solar Technology Yangzhou Co Ltd. Дата публикации: 2022-03-23.

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Номер патента: US20220238748A1. Автор: Wei Shan,Xiaoye CHEN,Junbing Zhang. Владелец: JA Solar Technology Yangzhou Co Ltd. Дата публикации: 2022-07-28.

Method for manufacturing substrate processing device, ceiling heater and semiconductor device

Номер патента: WO2018100850A1. Автор: 周平西堂,村田　等,哲也小杉. Владелец: 株式会社日立国際電気. Дата публикации: 2018-06-07.

Composition for forming insulating film, insulating film, and semiconductor device including insulating film

Номер патента: EP3623404A4. Автор: Hiroto Miyake,Akira Yamakawa,Naoko Tsuji. Владелец: Daicel Corp. Дата публикации: 2020-11-11.

COMPOSITION FOR CURABLE RESIN, CURED PRODUCT OF SAID COMPOSITION, PRODUCTION METHOD FOR SAID COMPOSITION AND SAID CURED PRODUCT, AND SEMICONDUCTOR DEVICE

Номер патента: US20210301076A1. Автор: Minami Masaki,NISHITANI Yoshinori,SATO Tatsuki. Владелец: ENEOS CORPORATION. Дата публикации: 2021-09-30.

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Номер патента: US20200308340A1. Автор: Minami Masaki,NISHITANI Yoshinori,SATO Tatsuki. Владелец: JXTG NIPPON OIL & ENERGY CORPORATION. Дата публикации: 2020-10-01.

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Номер патента: US20200325270A1. Автор: Minami Masaki,NISHITANI Yoshinori,SATO Tatsuki. Владелец: JXTG NIPPON OIL & ENERGY CORPORATION. Дата публикации: 2020-10-15.

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Номер патента: JPWO2014010471A1. Автор: 行永横田,斎田　利典,利典斎田,伸大八木,義輝鎌田,照正米田. Владелец: SETTSU OIL MILL., INC.. Дата публикации: 2016-06-23.

Method for manufacturing adhesive sheet for stealth dicing and semiconductor device

Номер патента: KR102478993B1. Автор: 시게유키 야마시타,코세이 후쿠모토,마사토모 나카무라. Владелец: 린텍 가부시키가이샤. Дата публикации: 2022-12-19.

Composition for cured resin, cured product of said composition, production method for said composition and said cured product, and semiconductor device

Номер патента: TW201925330A. Автор: 西谷佳典,南昌樹,佐藤樹生. Владелец: 日商Ｊｘｔｇ能源股份有限公司. Дата публикации: 2019-07-01.

Composition for curable resin, cured product of said composition, production method for said composition and said cured product, and semiconductor device

Номер патента: EP3702390B1. Автор: Yoshinori Nishitani,Masaki Minami,Tatsuki SATO. Владелец: Eneos Corp. Дата публикации: 2023-12-27.

Composition for curable resin, cured product of said composition, production method for said composition and said cured product, and semiconductor device

Номер патента: EP3702388B1. Автор: Yoshinori Nishitani,Masaki Minami,Tatsuki SATO. Владелец: Eneos Corp. Дата публикации: 2024-06-12.

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Номер патента: US20180012801A1. Автор: HUBER Michael,ZINI Lorenzo. Владелец: OSRAM Opto Semiconductors GmbH. Дата публикации: 2018-01-11.

Method for Protecting a Surface of a Substrate and Semiconductor Device

Номер патента: US20170032964A1. Автор: Denifl Guenter,KUECK Daniel,Moennich Roland,Eigler Werner. Владелец: . Дата публикации: 2017-02-02.

Method for Manufacturing a Marked Single-Crystalline Substrate and Semiconductor Device with Marking

Номер патента: US20150037964A1. Автор: Popp Thomas. Владелец: . Дата публикации: 2015-02-05.

Thermally Conductive Sheet, Production Method for Thermally Conductive Sheet, Heat Dissipation Member, and Semiconductor Device

Номер патента: US20190035712A1. Автор: Aramaki Keisuke,Kanaya Hiroki,Uchida Shinichi,Uchida Shunsuke,Rishabh Gupta. Владелец: . Дата публикации: 2019-01-31.

Stack, method for treating substrate material, temporary fixing composition, and semiconductor device

Номер патента: US20160049324A1. Автор: Hiroyuki Ishii,Katsumi Inomata,Youichirou Maruyama,Kousuke Tamura,Keisuke Yajima,Tooru Matsumura,Araki Wakiuchi,Torahiko YAMAGUCHI. Владелец: JSR Corp. Дата публикации: 2016-02-18.

Method for singulating an assemblage into semiconductor chips, and semiconductor chip

Номер патента: US20180047628A1. Автор: Mathias Kaempf. Владелец: OSRAM Opto Semiconductors GmbH. Дата публикации: 2018-02-15.

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Номер патента: US20190055443A1. Автор: Aramaki Keisuke,Nomura Yu,Kanaya Hiroki,Uchida Shinichi,Uchida Shunsuke. Владелец: . Дата публикации: 2019-02-21.

Method for separating epitaxial layers and growth substrates, and semiconductor device using same

Номер патента: US20150069418A1. Автор: Ki Bum Nam,Joo Won Choi,A Ram Cha LEE,Yu Dae Han,Jeong Hun HEO,Choong Min Lee,Su Jin Shin. Владелец: Seoul Viosys Co Ltd. Дата публикации: 2015-03-12.

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Номер патента: US20180069147A1. Автор: Von Malm Norwin,Hoeppel Lutz,Illek Stefan,Scholz Dominik,Pfeuffer Alexander F.,Otto Isabel. Владелец: . Дата публикации: 2018-03-08.

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Номер патента: US20140175669A1. Автор: Lee Chul-Ho,LEE Sung-jae,MOON Joon-Young,PARK You-Jung,YOON Yong-Woon,LEE Chung-Heon,Cho Youn-Jin. Владелец: . Дата публикации: 2014-06-26.

METHOD FOR MANUFACTURING A SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND SEMICONDUCTOR LIGHT-EMITTING ELEMENT MANUFACTURED THEREBY

Номер патента: US20140183589A1. Автор: KIM Sung Tae,HAN Jae Ho,KIM Je Won,Lee Jong Ho,Chae Seung Wan. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2014-07-03.

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Номер патента: US20180117706A1. Автор: KAEMPF Mathias. Владелец: . Дата публикации: 2018-05-03.

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Номер патента: US20160126321A1. Автор: WATANABE Yukimune. Владелец: . Дата публикации: 2016-05-05.

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Номер патента: US20160172539A1. Автор: Ki Bum Nam,Joo Won Choi,A Ram Cha LEE,Yu Dae Han,Jeong Hun HEO,Choong Min Lee,Su Jin Shin. Владелец: Seoul Viosys Co Ltd. Дата публикации: 2016-06-16.

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Номер патента: US20210217663A1. Автор: Gerhard Sven,NÄHLE Lars. Владелец: OSRAM OLED GmbH. Дата публикации: 2021-07-15.

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Номер патента: US20160204032A1. Автор: KAEMPF Mathias. Владелец: . Дата публикации: 2016-07-14.

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Номер патента: US20200251402A1. Автор: Aramaki Keisuke,Kanaya Hiroki,Uchida Shinichi,Uchida Shunsuke,Rishabh Gupta. Владелец: . Дата публикации: 2020-08-06.

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Номер патента: US20140361102A1. Автор: OGAWA Hiroyuki,Hatoh Hideyuki. Владелец: . Дата публикации: 2014-12-11.

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Номер патента: US20150303112A1. Автор: KAEMPF Mathias. Владелец: . Дата публикации: 2015-10-22.

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Номер патента: US20170309481A1. Автор: Perzlmaier Korbinian,Off Juergen,Gotschke Tobias. Владелец: . Дата публикации: 2017-10-26.

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Номер патента: US20200350207A1. Автор: Höppel Lutz,SCHWARZ Thomas,Richter Jens,Baumheinrich Thorsten Frank. Владелец: . Дата публикации: 2020-11-05.

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Номер патента: US20160375652A1. Автор: Ishii Hiroyuki,YAMAGUCHI Torahiko,Inomata Katsumi. Владелец: JSR Corporation. Дата публикации: 2016-12-29.

Thermally conductive sheet, production method for thermally conductive sheet, heat dissipation member, and semiconductor device

Номер патента: KR102151931B1. Автор: 유 노무라,게이스케 아라마키,신이치 우치다,슌스케 우치다,스케 우치다,히로키 가나야. Владелец: 데쿠세리아루즈 가부시키가이샤. Дата публикации: 2020-09-04.

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Номер патента: EP3409728A1. Автор: Gupta Rishabh,Shunsuke Uchida,Shinichi Uchida,Hiroki Kanaya,Keisuke Aramaki. Владелец: Dexerials Corp. Дата публикации: 2018-12-05.

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Номер патента: JP6861095B2. Автор: 洋平池邊,勉笑喜,弘文小坂井,笑喜　勉,貴弘尾上. Владелец: Hoya Corp. Дата публикации: 2021-04-21.

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Номер патента: KR100819195B1. Автор: 켄 사카타. Владелец: 미쓰이 긴조꾸 고교 가부시키가이샤. Дата публикации: 2008-04-07.

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Номер патента: FR2994022A1. Автор: Thomas Suenner. Владелец: ROBERT BOSCH GMBH. Дата публикации: 2014-01-31.

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Номер патента: DE19840385C2. Автор: Eugene Disimone,Pramjit Singh. Владелец: National Semiconductor Corp. Дата публикации: 2001-03-08.

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Номер патента: JP2013197183A. Автор: Hiroyuki Ogawa,裕之小川,Hideyuki Hanefuji,秀幸羽藤. Владелец: Tokyo Electron Ltd. Дата публикации: 2013-09-30.

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Номер патента: US9362368B2. Автор: Yukimune Watanabe. Владелец: Seiko Epson Corp. Дата публикации: 2016-06-07.

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Номер патента: CN114196998A. Автор: 郑旭东,吴凤丽,杨华龙. Владелец: Piotech Inc. Дата публикации: 2022-03-18.

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Номер патента: CN103943672A. Автор: A.莫德,H.-J.舒尔泽,H.斯特拉克. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2014-07-23.

Gas supply method for semiconductor manufacturing apparatus, gas supply system and semiconductor manufacturing apparatus

Номер патента: KR102039759B1. Автор: 히로유키 오가와,히데유키 하토. Владелец: 도쿄엘렉트론가부시키가이샤. Дата публикации: 2019-11-01.

Thermally conductive sheet, method for producing the same, heat dissipation member, and semiconductor device

Номер патента: TWI670464B. Автор: 金谷紘希,荒卷慶輔,大門正英. Владелец: 日商迪睿合股份有限公司. Дата публикации: 2019-09-01.

Method for producing a plurality of semiconductor chips and semiconductor chip

Номер патента: DE102017125276A1. Автор: Jens Richter,Thomas Schwarz,Lutz Höppel,Thorsten Frank Baumheinrich. Владелец: OSRAM Opto Semiconductors GmbH. Дата публикации: 2019-05-02.

The method for crystallising of metal oxide semiconductor layer and semiconductor structure

Номер патента: CN106252203A. Автор: 叶家宏. Владелец: AU OPTRONICS CORP. Дата публикации: 2016-12-21.

Thermally conductive sheet, production method for thermally conductive sheet, heat dissipation member, and semiconductor device

Номер патента: KR102245167B1. Автор: 게이스케 아라마키,신이치 우치다,슌스케 우치다,스케 우치다,히로키 가나야,굽타 리샤브. Владелец: 데쿠세리아루즈 가부시키가이샤. Дата публикации: 2021-04-28.

Method for improving a quality of dielectric layer and semiconductor device

Номер патента: US6548426B1. Автор: Kazuo Maeda,Setsu Suzuki. Владелец: Canon Marketing Japan Inc. Дата публикации: 2003-04-15.

Method for improving a quality of dielectric layer and semiconductor device

Номер патента: EP1081755A3. Автор: Setsu Semiconductor Process Lab. Co. Ltd. Suzuki,Kazuou Semiconductor Process Lab. Co. Ltd. Maeda. Владелец: Canon Marketing Japan Inc. Дата публикации: 2001-11-07.

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Номер патента: FR2977070A1. Автор: Oleg Kononchuk,Christophe Figuet. Владелец: Soitec SA. Дата публикации: 2012-12-28.

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Номер патента: TW201943778A. Автор: 嶋田和人,山下広祐. Владелец: 日商富士軟片股份有限公司. Дата публикации: 2019-11-16.

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Номер патента: WO2011143836A1. Автор: 苏冠创. Владелец: 香港商莫斯飞特半导体有限公司. Дата публикации: 2011-11-24.

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Номер патента: US20220044922A1. Автор: Clark Robert D.,Consiglio Steven P.,Tapily Kandabara N.,Triyoso Dina H.. Владелец: . Дата публикации: 2022-02-10.

Method for forming local interconnection line for use in semiconductor device

Номер патента: KR100526870B1. Автор: 고용선,권성운. Владелец: 삼성전자주식회사. Дата публикации: 2005-11-09.

Methods for forming contacts for dual stress liner CMOS semiconductor devices

Номер патента: KR101465703B1. Автор: 이경우,구자흠,박완재,장종광,데오도로스 이. 스탄데르트. Владелец: 인터내셔널 비즈니스 머신즈 코오퍼레이션. Дата публикации: 2014-11-28.

Method for forming barrier layer for dielectric layers in semiconductor devices

Номер патента: US9508548B2. Автор: Ting-Chun Wang,Yu-Ting Lin,Sheng-Wen Chen,Che-Hao Chang,Wei-Ming You. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-11-29.

Method for forming dielectric layer for metallic pattern in semiconductor device

Номер патента: KR100557944B1. Автор: 김찬배. Владелец: 주식회사 하이닉스반도체. Дата публикации: 2006-03-10.

Calibration method for emulating group iii-v semiconductor device and method for manufacturing group iii-v semiconductor device

Номер патента: US20230066030A1. Автор: Chi-Feng Huang,Chia-Chung Chen,Chu Fu CHEN,Chiao-Chun Hsu,Kuan-Hung Liu,Shufang Fu,Fu-Yu Shih. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-03-02.

Methods for Forming Electrically Precise Capacitors, and Structures Formed Therefrom

Номер патента: US20170098508A1. Автор: Smith Patrick,KAMATH Arvind,SCHER Erik,LI Jiang,Choi Criswell. Владелец: Thin Film Electronics ASA. Дата публикации: 2017-04-06.

METHODS FOR FORMING SILICON-CONTAINING EPITAXIAL LAYERS AND RELATED SEMICONDUCTOR DEVICE STRUCTURES

Номер патента: US20180323059A1. Автор: Tolle John,Goodman Matthew,Margetis Joe,Vyne Robert,Bhargava Nupur. Владелец: . Дата публикации: 2018-11-08.

METHOD FOR FORMING VIA PROFILE OF INTERCONNECT STRUCTURE OF SEMICONDUCTOR DEVICE STRUCTURE

Номер патента: US20160351669A1. Автор: Chang Che-Cheng,CHENG Tai-Shin,CHEN Wei-Ting,SHIAO Wei-Yin. Владелец: Taiwan Semiconductor Manufacturing Co., Ltd.. Дата публикации: 2016-12-01.

METHODS FOR FORMING LOW TEMPERATURE SEMICONDUCTOR LAYERS AND RELATED SEMICONDUCTOR DEVICE STRUCTURES

Номер патента: US20180350588A1. Автор: Raisanen Petri,Hsu Peng-Fu,MOUSA MOATAZ BELLAH. Владелец: . Дата публикации: 2018-12-06.

METHOD FOR FORMING METAL CHALCOGENIDE THIN FILMS ON A SEMICONDUCTOR DEVICE

Номер патента: US20160372365A1. Автор: Maes Jan Willem,Tang Fu,Givens Michael Eugene,Xie Qi,Woodruff Jacob Huffman. Владелец: . Дата публикации: 2016-12-22.

Methods for forming silicon-containing epitaxial layers and related semiconductor device structures

Номер патента: US10446393B2. Автор: John Tolle,Matthew Goodman,Robert Vyne,Joe Margetis,Nupur Bhargava. Владелец: ASM IP Holding BV. Дата публикации: 2019-10-15.

Methods for forming low temperature semiconductor layers and related semiconductor device structures

Номер патента: US10886123B2. Автор: Peng-Fu Hsu,Petri Raisanen,Moataz Bellah Mousa. Владелец: ASM IP Holding BV. Дата публикации: 2021-01-05.

A method for forming a self-aligned contact of a semiconductor device

Номер патента: KR100609523B1. Автор: 남상혁. Владелец: 주식회사 하이닉스반도체. Дата публикации: 2006-08-04.

Method for forming an element isolation region in a semiconductor device

Номер патента: KR100189733B1. Автор: 박주석. Владелец: 엘지반도체주식회사. Дата публикации: 1999-06-01.

A method for forming a inter-layer oxide of a semiconductor device

Номер патента: KR100447253B1. Автор: 염승진,김남경. Владелец: 주식회사 하이닉스반도체. Дата публикации: 2004-09-07.

Method for forming an element isolation region in a semiconductor device

Номер патента: KR100190053B1. Автор: 김성의. Владелец: 윤종용. Дата публикации: 1999-06-01.

Method for forming titanium silicide ohmic contact layer of semiconductor device

Номер патента: KR100626741B1. Автор: 손현철,엄장웅. Владелец: 주식회사 하이닉스반도체. Дата публикации: 2006-09-22.

Method for forming dual poly silicon gate electrode in semiconductor device

Номер патента: KR100582365B1. Автор: 안현주. Владелец: 주식회사 하이닉스반도체. Дата публикации: 2006-05-22.

Method for forming a gate oxide layer of a semiconductor device

Номер патента: KR20010091519A. Автор: 황철주,양두영. Владелец: 황 철 주. Дата публикации: 2001-10-23.

Method for forming an element isolation region in a semiconductor device

Номер патента: KR100189992B1. Автор: 이재경,박찬식,조경환,이성한. Владелец: 윤종용. Дата публикации: 1999-06-01.

Method for forming laterally varying doping concentrations and a semiconductor device

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A method for forming a contact hole pattern of a semiconductor device

Номер патента: KR20050002368A. Автор: 복철규,이원욱. Владелец: 주식회사 하이닉스반도체. Дата публикации: 2005-01-07.

Method for forming an element isolation region in a semiconductor device

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Method for forming the landing plug contact hole in semiconductor device

Номер патента: KR100745052B1. Автор: 남기원,박상수. Владелец: 주식회사 하이닉스반도체. Дата публикации: 2007-08-01.

METHOD FOR FORMING A SELF-ALIGNED CONTACT IN A SEMICONDUCTOR DEVICE

Номер патента: FR2784229B1. Автор: Chang Hyum Cho,Kyu Hyun Lee,Lae Goo Lee,Sang Sub Jeong. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2004-03-12.

Method for forming a metal line pattern of the semiconductor device

Номер патента: KR100827488B1. Автор: 문주형. Владелец: 동부일렉트로닉스 주식회사. Дата публикации: 2008-05-06.

Method for forming gate electrode and salicide contact of semiconductor devices

Номер патента: KR100315451B1. Автор: 김서원. Владелец: 아남반도체 주식회사. Дата публикации: 2001-11-28.

Method for forming a metallic wiring layer in a semiconductor device

Номер патента: DE4200809C2. Автор: Chang-Soo Park,Sang-In Lee,Jeong-Ha Son. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 1996-12-12.

Method for forming a gate oxide layer of a semiconductor device

Номер патента: KR100440501B1. Автор: 황철주,양두영. Владелец: 주성엔지니어링(주). Дата публикации: 2004-07-15.

METHOD FOR FORMING A SELF-ALIGNED CONTACT IN A SEMICONDUCTOR DEVICE

Номер патента: FR2784229A1. Автор: Chang Hyum Cho,Kyu Hyun Lee,Lae Goo Lee,Sang Sub Jeong. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2000-04-07.

Method for forming a field oxide layer of a semiconductor device

Номер патента: DE4109184C2. Автор: Taek-Yong Jang,Weon-Sik Paek,Weon-Taek Choi. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 1995-12-21.

Method for forming a self aligned contact in a semiconductor device

Номер патента: US6177320B1. Автор: Sang-Sup Jeong,Chang-jin Kang,Hong-Sik Jeong,Chul Jung,Chan-ouk Jung,Jae-Goo Lee,Chang-Hyun Cho. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2001-01-23.

Method for forming a self aligned contact in a semiconductor device

Номер патента: GB9909492D0. Автор: . Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 1999-06-23.

Method for forming contact hole with different depth of semiconductor device

Номер патента: KR100257771B1. Автор: 서원준. Владелец: 현대전자산업주식회사. Дата публикации: 2000-06-01.

Method for forming sti to prevent poly stringer in semiconductor device

Номер патента: KR100763702B1. Автор: 김정호. Владелец: 동부일렉트로닉스 주식회사. Дата публикации: 2007-10-04.

Method for forming fully silicided gate electrode in a semiconductor device

Номер патента: US7659189B2. Автор: Chien-Ting Lin,Li-Wei Cheng,Che-Hua Hsu,Guang-Hwa Ma,Yao-Tsung Huang. Владелец: United Microelectronics Corp. Дата публикации: 2010-02-09.

Method for forming contact hole in metal wiring of semiconductor device

Номер патента: KR950015589A. Автор: 서동량. Владелец: 금성일렉트론 주식회사. Дата публикации: 1995-06-17.

METHOD FOR FORMING A MULTIPLE LEVEL CONNECTION IN A SEMICONDUCTOR DEVICE

Номер патента: DE4125221A1. Автор: Han-su Kim,Jang-Rae Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 1992-07-16.

Method for forming a hard mask pattern in a semiconductor device

Номер патента: CN101447398A. Автор: 郑宇荣. Владелец: Hynix Semiconductor Inc. Дата публикации: 2009-06-03.

Method for forming the gate oxide of metal-oxide-semiconductor devices

Номер патента: EP1014432A1. Автор: Thomas Vogelsang,Wilfried Haensch,Juergen Faul. Владелец: Infineon Technologies North America Corp. Дата публикации: 2000-06-28.

A method for forming a fine pattern transistor of a semiconductor device

Номер патента: KR100673099B1. Автор: 복철규,김희범,임창문. Владелец: 주식회사 하이닉스반도체. Дата публикации: 2007-01-22.

Method for forming a metal interconnection layer of a semiconductor device using a modified dual damascene process

Номер патента: TWI313495B. Автор: LEE Kyung-Woo,KIM Jae-Hak,Lee Soo-Geun. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2009-08-11.

Method for forming an electrical interconnect in a silicon semiconductor device

Номер патента: JP2685253B2. Автор: ラッセル・クレイグ・エルナンガー,ヨハネス・エリザベス・ヨセフ・シュミッツ. Владелец: フィリップスエレクトロニクスネムローゼフェンノートシャップ. Дата публикации: 1997-12-03.

Method for forming a copper metal interconnection of a semiconductor device using two seed layers

Номер патента: US20070155145A1. Автор: Ji Ho Hong. Владелец: Dongbu Electronics Co Ltd. Дата публикации: 2007-07-05.

Method for forming transistors with different channel lengths in semiconductor device

Номер патента: CN114628326A. Автор: 李俊杰,周娜,申靖浩. Владелец: Zhenxin Beijing Semiconductor Co Ltd. Дата публикации: 2022-06-14.

Method for forming contact hole buried metal wiring in semiconductor device

Номер патента: KR970053577A. Автор: 조경수. Владелец: 현대전자산업 주식회사. Дата публикации: 1997-07-31.

Method for forming fine contact and conductive line in semiconductor device

Номер патента: KR970052274A. Автор: 신동원. Владелец: 현대전자산업 주식회사. Дата публикации: 1997-07-29.

Method for forming a gate of a high integration semiconductor device

Номер патента: US20020093066A1. Автор: Young-Hun Bae,Won-sung Park. Владелец: Hynix Semiconductor Inc. Дата публикации: 2002-07-18.

Apparatus and method for detecting failure in a mechanical press

Номер патента: US20200047442A1. Автор: Kwok Pun LAW,Hong Yeung LI,Cho Wai LEUNG. Владелец: ASM TECHNOLOGY SINGAPORE PTE LTD. Дата публикации: 2020-02-13.

Method for manufacturing etch stop areas for contacting semiconductor devices

Номер патента: US20180114724A1. Автор: Dmitri Alex Tschumakow,Claus Dahl. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2018-04-26.

Method for manufacturing etch stop areas for contacting semiconductor devices

Номер патента: US10354917B2. Автор: Dmitri Alex Tschumakow,Claus Dahl. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2019-07-16.

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Номер патента: US20180301375A1. Автор: Chou You-Hua,Chuang Kuo-Sheng. Владелец: . Дата публикации: 2018-10-18.

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Номер патента: US20240072171A1. Автор: Young Gwang YOON. Владелец: SK hynix Inc. Дата публикации: 2024-02-29.

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Номер патента: US20170047228A1. Автор: Sadiki Jordan. Владелец: Infineon Technologies North America Corp. Дата публикации: 2017-02-16.

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Номер патента: US11848383B2. Автор: Young Gwang YOON. Владелец: SK hynix Inc. Дата публикации: 2023-12-19.

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Номер патента: US20180315632A1. Автор: Yasushi Taniyama,Toshimitsu Morihana. Владелец: Sinfonia Technology Co Ltd. Дата публикации: 2018-11-01.

Method for detecting transfer shift of transfer mechanism and semiconductor processing equipment

Номер патента: KR100832925B1. Автор: 와타루 마치야마. Владелец: 도쿄엘렉트론가부시키가이샤. Дата публикации: 2008-05-27.

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Номер патента: WO2020148796A1. Автор: 修小室,一郎宮野,高橋　正和,真志藤田. Владелец: 株式会社日立ハイテク. Дата публикации: 2020-07-23.

Resin composition and method for producing same, molding material, packaging container, and semiconductor container

Номер патента: WO2022034888A1. Автор: 慎介宮澤. Владелец: 日本ゼオン株式会社. Дата публикации: 2022-02-17.

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Номер патента: DE102006002682A1. Автор: Laszlo Dipl.-Chem. Dr. Fabry,Gunter Strebel,Hans Dipl.-Phys. Dr. Oelkrug. Владелец: SILTRONIC AG. Дата публикации: 2007-08-02.

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Номер патента: TW202028478A. Автор: 宮野一郎,小室修,高橋正和,藤田志. Владелец: 日商日立全球先端科技股份有限公司. Дата публикации: 2020-08-01.

Method for detecting transfer shift of transfer mechanism and semiconductor processing equipment

Номер патента: CN1934692A. Автор: 町山弥. Владелец: Tokyo Electron Ltd. Дата публикации: 2007-03-21.

Method for processing the surface of heat sink and semiconductor package using it

Номер патента: KR0180604B1. Автор: 이원균,신원선. Владелец: 암코테크놀로지 아이엔씨.. Дата публикации: 1999-03-20.

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Номер патента: TW202216884A. Автор: 宮澤慎介. Владелец: 日商日本瑞翁股份有限公司. Дата публикации: 2022-05-01.

Method for detecting transfer shift of transfer mechanism and semiconductor processing equipment

Номер патента: CN100440475C. Автор: 町山弥. Владелец: Tokyo Electron Ltd. Дата публикации: 2008-12-03.

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Номер патента: EP1577941A2. Автор: Greja Johanna Adriana Maria Verheijden,Johannes Van Wingerden,Pascal Henri Leon Bancken. Владелец: Interuniversitair Microelektronica Centrum vzw IMEC. Дата публикации: 2005-09-21.

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Номер патента: WO2019114968A1. Автор: Choo Kean Lim,Choon Keat OR,Choon Kim LIM,Siew Yan CHUA. Владелец: OSRAM Opto Semiconductors GmbH. Дата публикации: 2019-06-20.

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Номер патента: US20230402275A1. Автор: Atsushi Mizutani. Владелец: Fujifilm Corp. Дата публикации: 2023-12-14.

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Номер патента: US20050116330A1. Автор: Tomotoshi Sato,Rina Murayama. Владелец: Individual. Дата публикации: 2005-06-02.

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Номер патента: US20220007556A1. Автор: Fujita Masashi,Komuro Osamu,Takahashi Masakazu,MIYANO Ichiro. Владелец: . Дата публикации: 2022-01-06.

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Номер патента: US20080040639A1. Автор: Jong Koo Kang. Владелец: UniTest Inc. Дата публикации: 2008-02-14.

Method for the anisotropic etching of metal films in the fabrication of interconnects

Номер патента: US5350484A. Автор: Xiao-Chun Mu,Donald S. Gardner,David B. Fraser. Владелец: Intel Corp. Дата публикации: 1994-09-27.

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Номер патента: US20230402478A1. Автор: Ying-Hao Chen,Yun-Wei Cheng,Chun-Hao Chou,Kuo-Cheng Lee. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-12-14.

Apparatus and methods for sensing long wavelength light

Номер патента: US11798969B2. Автор: Ying-Hao Chen,Yun-Wei Cheng,Chun-Hao Chou,Kuo-Cheng Lee. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-10-24.

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Номер патента: US20240014202A1. Автор: Chun-Cheng Ku,Kuan-Jung Jhu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-01-11.

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Номер патента: TW201128177A. Автор: Atsunori Nishikawa. Владелец: Sumitomo Bakelite Co. Дата публикации: 2011-08-16.

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Номер патента: CA1111570A. Автор: Hormazdyar M. Dalal,Majid Ghafghaichi,Hans Wimpfheimer,Lucian A. Kasprzak. Владелец: International Business Machines Corp. Дата публикации: 1981-10-27.

Production method of T-shaped gate electrode in semiconductor device

Номер патента: US5304511A. Автор: Masayuki Sakai. Владелец: Mitsubishi Electric Corp. Дата публикации: 1994-04-19.

Flexible semiconductor device and method for producing same, image display device using the flexible semiconductor device and manufacturing method thereof

Номер патента: CN102812541A. Автор: 平野浩一,铃木武,增田忍. Владелец: Matsushita Electric Industrial Co Ltd. Дата публикации: 2012-12-05.

Semiconductor device, method for manufacturing the same, and electronic device including the semiconductor device

Номер патента: JPWO2008126729A1. Автор: 英男大野,浦山　雅夫,雅夫浦山,川崎　雅司,雅司川崎,大野　英男. Владелец: Tohoku University NUC. Дата публикации: 2010-07-22.

Mehtod for forming inter layer insulting film in the semiconductor device

Номер патента: KR100301530B1. Автор: 김창규,조웅래. Владелец: 동부전자 주식회사. Дата публикации: 2001-10-19.

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Номер патента: KR101013474B1. Автор: 고자와미와,노자키고지,나미키다카히사,곤주니치. Владелец: 후지쯔 가부시끼가이샤. Дата публикации: 2011-02-14.

PROCESS FOR FORMING A FIELD OXIDE LAYER OF A SEMICONDUCTOR DEVICE.

Номер патента: FR2669467B1. Автор: Paek Weon-Sik,Jang Taek-Yong,Choi Weon-Taek. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 1997-07-04.

PROCESS FOR FORMING METALLIZED ZONES ON A SERIES OF SEMICONDUCTOR DEVICES

Номер патента: FR2383522A1. Автор: Giulio Iannuzzi,Carlo Cognetti De Martis,Vittorio Del Bo,Luciano Gandolfi. Владелец: SGS ATES Componenti Elettronici SpA. Дата публикации: 1978-10-06.

Process for forming deposited film and process for producing semiconductor device

Номер патента: EP0420590B1. Автор: Shigeyuki C/O Canon Kabushiki Kaisha Matsumoto,Osamu C/O Canon Kabushiki Kaisha Ikeda,Kazuaki C/O Canon Kabushiki Kaisha Ohmi. Владелец: Canon Inc. Дата публикации: 1996-03-27.

Method for doping semiconductor layer, method for producing thin film semiconductor element and thin film semiconductor device

Номер патента: CN1251307C. Автор: 町田晓夫,碓井节夫,达拉姆·P·戈塞恩. Владелец: Sony Corp. Дата публикации: 2006-04-12.

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Номер патента: EP0420589A2. Автор: Shigeyuki C/O Canon Kabushiki Kaisha Matsumoto,Osamu C/O Canon Kabushiki Kaisha Ikeda,Kazuaki C/O Canon Kabushiki Kaisha Ohmi. Владелец: Canon Inc. Дата публикации: 1991-04-03.

Method for monitoring the shape of the processed surfaces of semiconductor devices and equipment for manufacturing the semiconductor devices

Номер патента: US20040048399A1. Автор: Hiroyuki Yano,Katsuya Okumura. Владелец: Toshiba Corp. Дата публикации: 2004-03-11.

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Номер патента: EP0420590A2. Автор: Shigeyuki C/O Canon Kabushiki Kaisha Matsumoto,Osamu C/O Canon Kabushiki Kaisha Ikeda,Kazuaki C/O Canon Kabushiki Kaisha Ohmi. Владелец: Canon Inc. Дата публикации: 1991-04-03.

Method for reduction of filaments between electrodes

Номер патента: US4878996A. Автор: Howard L. Tigelaar,Allan T. Mitchell,Kalipatnam V. Rao,Shaym G. Garg. Владелец: Texas Instruments Inc. Дата публикации: 1989-11-07.

Material for forming adhesion reinforcing layer, adhesion reinforcing layer, semiconductor device, and manufacturing method thereof

Номер патента: US7830013B2. Автор: Tadahiro Imada,Yoshihiro Nakata,Ei Yano,Junichi Kon. Владелец: Fujitsu Ltd. Дата публикации: 2010-11-09.

Etching composition and method for selectively removing silicon nitride during manufacture of a semiconductor device

Номер патента: WO2021067150A1. Автор: Wen Dar Liu,Yi-Chia Lee,Laisheng SUN,Aiping Wu,Jhih Kuei GE. Владелец: Versum Materials US, LLC. Дата публикации: 2021-04-08.

Systems for forming insulative coatings for via holes in semiconductor devices

Номер патента: US20050282383A1. Автор: Warren Farnworth. Владелец: Farnworth Warren M. Дата публикации: 2005-12-22.

Etching solution and method for selectively removing silicon nitride during manufacture of a semiconductor device

Номер патента: US11955341B2. Автор: Wen Dar Liu,Yi-Chia Lee,Jhih Kuei GE. Владелец: Versum Materials US LLC. Дата публикации: 2024-04-09.

Etching solution and method for selectively removing silicon nitride during manufacture of a semiconductor device

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Semiconductor assemblies with system and method for smoothing surfaces of 3d structures

Номер патента: US20230317511A1. Автор: Andrew M. Bayless,Brandon P. Wirz,Owen R. Fay. Владелец: Micron Technology Inc. Дата публикации: 2023-10-05.

Methods for performing a gate cut last scheme for finfet semiconductor devices

Номер патента: US20170345913A1. Автор: Xintuo Dai,Xusheng Wu,Haigou Huang. Владелец: Globalfoundries Inc. Дата публикации: 2017-11-30.

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Номер патента: TW200525642A. Автор: Kazutaka Yanagita,Christian Dussarrat,Takeshi Hoshi,Tsuyoshi Saito,Takako Kimura. Владелец: Semiconductor Leading Edge Tec. Дата публикации: 2005-08-01.

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Номер патента: US20160211378A1. Автор: WON Seok-Jun,Lee Chul-Woong,Kim Young-Tak,KIM Kook-Tae,Son Ho-Sung,Yi Ji-Hye. Владелец: . Дата публикации: 2016-07-21.

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Номер патента: US20140369115A1. Автор: Seok-jun Won,Ji-Hye Yi,Kook-Tae KIM,Young-Tak Kim,Ho-Sung Son,Chul-Woong Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2014-12-18.

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Номер патента: US20070000872A1. Автор: Gaku Minamihaba,Hiroyuki Yano,Yukiteru Matsui,Atsushi Shigeta. Владелец: Toshiba Corp. Дата публикации: 2007-01-04.

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Номер патента: US7402521B2. Автор: Gaku Minamihaba,Hiroyuki Yano,Yukiteru Matsui,Atsushi Shigeta. Владелец: Toshiba Corp. Дата публикации: 2008-07-22.

Method for manufacturing molecular beam epitaxial growth device and optical semiconductor device

Номер патента: KR960012304A. Автор: . Владелец: . Дата публикации: 1996-04-20.

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Номер патента: US9312376B2. Автор: Seok-jun Won,Ji-Hye Yi,Kook-Tae KIM,Young-Tak Kim,Ho-Sung Son,Chul-Woong Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-04-12.

Method for stabilizing cleaning baths for SI wafers, especially for semiconductor devices

Номер патента: EP0390254A2. Автор: Johannes Engelbertus A. M. Van Den Meerakker. Владелец: Philips Gloeilampenfabrieken NV. Дата публикации: 1990-10-03.

Method for the manufacture of an insulated gate field effect semiconductor device using photo enhanced CVD

Номер патента: US5094966A. Автор: Shunpei Yamazaki. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 1992-03-10.

Method for producing ohmic contacts on silicon carbide substrate of semiconductor device of e.g. power electronics device, involves producing oxide layer on surface of substrate, and applying contact metallization layer on contact region

Номер патента: DE102011078331A1. Автор: Michael Grieb,Thomas Suenner,Tim Behrens,Kathrin Rueschenschmidt. Владелец: ROBERT BOSCH GMBH. Дата публикации: 2012-08-09.

It is used to form the method for pattern and the method using this method manufacturing semiconductor devices

Номер патента: CN110323139A. Автор: 千宰协. Владелец: Hynix Semiconductor Inc. Дата публикации: 2019-10-11.

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Номер патента: JP2018037560A. Автор: Yasuyuki Kawada,泰之河田,Takeshi Tawara,河田　泰之,武志俵,俵　武志. Владелец: Fuji Electric Co Ltd. Дата публикации: 2018-03-08.

Heat-curable silicon resin sheet having phosphor-containing layer and white pigment-containing layer, and method for producing light emitting device and encapsulated light emitting semiconductor device using the same

Номер патента: KR20140081736A. Автор: 도시오 시오바라,츠토무 가시와기. Владелец: 신에쓰 가가꾸 고교 가부시끼가이샤. Дата публикации: 2014-07-01.

Methods for removing selected fins that are formed for finfet semiconductor devices

Номер патента: US20150318215A1. Автор: Ruilong Xie,William J. Taylor, Jr.. Владелец: Globalfoundries Inc. Дата публикации: 2015-11-05.

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Номер патента: US20170345913A1. Автор: Huang Haigou,Wu Xusheng,DAI Xintuo. Владелец: . Дата публикации: 2017-11-30.

Method for CVD and apparatus for performing the same in semiconductor device processing

Номер патента: KR100375102B1. Автор: 김종우,김광식,이희태,박윤세. Владелец: 삼성전자주식회사. Дата публикации: 2003-03-08.

Method for manufacturing peripheral dummy gate of transistor for testing semiconductor device

Номер патента: KR100223941B1. Автор: 남상혁. Владелец: 엘지반도체주식회사. Дата публикации: 1999-10-15.

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Номер патента: CN107845573B. Автор: 李东根,郑镛席,权星元,金熙范. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-02-28.

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Номер патента: US20190027584A1. Автор: Tolle John,Margetis Joe. Владелец: . Дата публикации: 2019-01-24.

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Номер патента: US20180062087A1. Автор: Sadamitsu Yuichi,Shinamura Shoji,Hamada Masahiro. Владелец: . Дата публикации: 2018-03-01.

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Номер патента: US20190067004A1. Автор: Kohen David,Profijt Harald Benjamin. Владелец: . Дата публикации: 2019-02-28.

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Номер патента: US20170103981A1. Автор: Hung Yu-Hsiang,Jenq Jyh-Shyang,LIN CHIEN-TING,Hsu Chih-Kai,Fu Ssu-I. Владелец: . Дата публикации: 2017-04-13.

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Номер патента: US20150140692A1. Автор: Tsuei Cherng-Chang,TSAI Hsien-Chieh,LIN Tz-Wei,YANG Sheng-Jen,LIN Hung-Yin,LU Chen-Hsiang. Владелец: Taiwan Semiconductor Manufacturing Co., Ltd.. Дата публикации: 2015-05-21.

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Номер патента: US20220298182A1. Автор: LEE Yi-Chia,LIU Wen Dar,WU Aiping,Ge Jhih Kuei,Sun Laisheng. Владелец: Versum Materials US, LLC. Дата публикации: 2022-09-22.

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Номер патента: US20200212008A1. Автор: KITANO Tomohiro. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2020-07-02.

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Номер патента: US20160315142A1. Автор: ZHANG BO,Zhang Jinping,LI Zehong,SONG Wenlong,SONG Xunyi,GU Hongming,ZOU Youbiao. Владелец: . Дата публикации: 2016-10-27.

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Номер патента: US20190304855A1. Автор: Igeta Masahiko,Terui Yoshimi. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2019-10-03.

Method for measuring and correcting misregistration between layers in a semiconductor device, and misregistration targets useful therein

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Номер патента: US20150357234A1. Автор: Lehnert Wolfgang,Rogalli Michael. Владелец: . Дата публикации: 2015-12-10.

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Номер патента: US20190333830A1. Автор: Masahiko Igeta,Yoshimi Terui. Владелец: Micron Technology Inc. Дата публикации: 2019-10-31.

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Номер патента: US20190341262A1. Автор: Zhou Jun,Li Yun,XU Jingjing,LUO Qingwei. Владелец: . Дата публикации: 2019-11-07.

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Номер патента: US11018002B2. Автор: John Tolle,Joe Margetis. Владелец: ASM IP Holding BV. Дата публикации: 2021-05-25.

Method for manufacturing a spin on glass film in a semiconductor device

Номер патента: KR100246779B1. Автор: 권혁진,홍상기,전상호. Владелец: 현대전자산업주식회사. Дата публикации: 2000-03-15.

Method for integrating selective ruthenium deposition into manufacturing of a semiconductor device

Номер патента: KR101506755B1. Автор: 켄지 스즈키. Владелец: 도쿄엘렉트론가부시키가이샤. Дата публикации: 2015-03-27.

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Номер патента: US10236177B1. Автор: David Kohen,Harald Benjamin Profijt. Владелец: ASM IP Holding BV. Дата публикации: 2019-03-19.

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Номер патента: KR100881135B1. Автор: 은병수. Владелец: 주식회사 하이닉스반도체. Дата публикации: 2009-02-02.

Method for manufacturing wine glass type contact hole of the semiconductor device

Номер патента: KR100781455B1. Автор: 강병주. Владелец: 동부일렉트로닉스 주식회사. Дата публикации: 2007-12-03.

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Номер патента: CN114001692A. Автор: 汪韦刚. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2022-02-01.

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Номер патента: FR2548831A1. Автор: Pieter Johannes Wilhel Jochems. Владелец: Philips Gloeilampenfabrieken NV. Дата публикации: 1985-01-11.

METHOD FOR ESTABLISHING AN ELECTRICAL INTERCONNECTION STRUCTURE ON A SILICON SEMICONDUCTOR DEVICE

Номер патента: FR2624304B1. Автор: Russell Craig Ellwanger,Johannes Elisabeth Jos Schmitz. Владелец: Philips Gloeilampenfabrieken NV. Дата публикации: 1990-05-04.

Method for fabricating interconnect lines with reduced line capacitance in semiconductor devices

Номер патента: JP4014234B2. Автор: − プージェングシン. Владелец: テキサスインスツルメンツインコーポレイテッド. Дата публикации: 2007-11-28.

METHOD FOR SELF-ALIGNING METAL CONTACTS ON A SELF-ALIGNED SEMICONDUCTOR DEVICE.

Номер патента: FR2663157B1. Автор: Collot Philippe,Schmidt Paul Erick. Владелец: Thomson CSF SA. Дата публикации: 1992-08-07.

The method for controlling the wafer bow in III-V type semiconductor devices

Номер патента: CN109103099A. Автор: S.肯南,P.W.金,S.E.朴,M.唐加尔,万建伟. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2018-12-28.

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Номер патента: JP6798293B2. Автор: 太郎西口,健二平塚. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2020-12-09.

Method for fabricating a pad-layer/fuse-layer of a semiconductor device

Номер патента: KR100413582B1. Автор: 이기민. Владелец: 동부전자 주식회사. Дата публикации: 2003-12-31.

Apparatus and method for flattening an insulating layer by etching in a semiconductor device

Номер патента: EP0620585A1. Автор: Yasukazu Intell. Property Division Mase,Masahiro Intell. Property Division Abe,Ken-Ichi Intell. Property Division Tomita,Kazuyuki Intell. Property Division Yahiro,Akira Intell. Property Division Ishiguro. Владелец: Toshiba Corp. Дата публикации: 1994-10-19.

Method for manufacturing silicon carbide epitaxial substrate and silicon carbide semiconductor device

Номер патента: WO2017090285A1. Автор: 太郎西口,和田　圭司,洋典伊東. Владелец: 住友電気工業株式会社. Дата публикации: 2017-06-01.

Method for manufacturing silicon carbide epitaxial substrate and silicon carbide semiconductor device

Номер патента: JP7070437B2. Автор: 勉堀,圭司和田,洋典伊東. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2022-05-18.

Method for providing increased dopant concentration in selected regions of semiconductor devices

Номер патента: EP0313777A2. Автор: David Stanasolovich,Jeffrey R. Barber,Harish N. Kotecha,David D. Meyer. Владелец: International Business Machines Corp. Дата публикации: 1989-05-03.

Method for low stress flip-chip assembly of fine-pitch semiconductor devices

Номер патента: US8530360B2. Автор: Abram M. Castro. Владелец: Texas Instruments Inc. Дата публикации: 2013-09-10.

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Номер патента: DE19620022A1. Автор: Kyeong Keun Choi. Владелец: Hyundai Electronics Industries Co Ltd. Дата публикации: 1996-11-21.

Method for removing circle defect on the metal layer of semiconductor device

Номер патента: KR100702796B1. Автор: 조보연. Владелец: 동부일렉트로닉스 주식회사. Дата публикации: 2007-04-03.

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Номер патента: JP6954316B2. Автор: 勉堀,洋典伊東. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2021-10-27.

Method for examining the defect of gate oxide layer in semiconductor device

Номер патента: KR100591149B1. Автор: 나유석. Владелец: 동부일렉트로닉스 주식회사. Дата публикации: 2006-06-19.

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Номер патента: KR100642486B1. Автор: 이기민. Владелец: 동부일렉트로닉스 주식회사. Дата публикации: 2006-11-02.

Method for cleaning the inside of a pipe of a semiconductor device manufacturing apparatus

Номер патента: JP2910761B1. Автор: 康佐々木. Владелец: NEC Corp. Дата публикации: 1999-06-23.

METHOD FOR PRODUCING AT LEAST ONE DEEP LAYER IN A SEMICONDUCTOR DEVICE

Номер патента: FR2548831B1. Автор: Pieter Johannes Wilhel Jochems. Владелец: Philips Gloeilampenfabrieken NV. Дата публикации: 1988-10-14.

Method for manufacturing silicon carbide epitaxial substrate and silicon carbide semiconductor device

Номер патента: JPWO2019044029A1. Автор: 勉堀,洋典伊東. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2020-11-05.

Method for adjusting effective work function of gate structure in semiconductor device

Номер патента: JP2014146789A. Автор: Spessot Alessio,Caillat Christian,Kauerauf Thomas,トーマス・カウエラウフ,アレッシオ・スペソット,クリスチャン・カイヤ. Владелец: Interuniversitair Microelektronica Centrum vzw IMEC. Дата публикации: 2014-08-14.

Method for producing a diffusion barrier metal layer in a semiconductor device

Номер патента: DE19620022C2. Автор: Kyeong Keun Choi. Владелец: Hyundai Electronics Industries Co Ltd. Дата публикации: 2002-09-19.

Method for manufacturing silicon carbide epitaxial substrate and silicon carbide semiconductor device

Номер патента: JP6856156B2. Автор: 圭司和田,太郎西口,和田　圭司,洋典伊東. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2021-04-07.

Non-contact method for monitoring and controlling plasma charging damage in a semiconductor device

Номер патента: US6251697B1. Автор: Pradip K. Roy,Carlos M. Chacon. Владелец: Agere Systems Guardian Corp. Дата публикации: 2001-06-26.

Structure and Method for Monitoring Variation Within an Active Region of a Semiconductor Device Using Scaling

Номер патента: US20080288188A1. Автор: William Y. Chang,Sharon L. Von Bruns. Владелец: International Business Machines Corp. Дата публикации: 2008-11-20.

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Номер патента: US9613816B2. Автор: Cherng-Chang TSUEI,Chen-Hsiang LU,Hsien-Chieh TSAI,Tz-Wei LIN,Sheng-Jen YANG,Hung-Yin Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-04-04.

Etching solution and method for selectively removing silicon nitride during manufacture of a semiconductor device

Номер патента: EP3938465A4. Автор: Wen Dar Liu,Yi-Chia Lee,Jhih Kuei GE. Владелец: Versum Materials US LLC. Дата публикации: 2022-10-26.

Method for fabricating a diffusion barrier metal layer in a semiconductor device

Номер патента: GB9610393D0. Автор: . Владелец: Hyundai Electronics Industries Co Ltd. Дата публикации: 1996-07-24.

Method for manufacturing a shallow trench isolation layer of the semiconductor device

Номер патента: KR100503344B1. Автор: 김성래. Владелец: 동부아남반도체 주식회사. Дата публикации: 2005-07-26.

Method for manufacturing silicon carbide epitaxial substrate and silicon carbide semiconductor device

Номер патента: WO2017090285A9. Автор: 太郎西口,和田　圭司,洋典伊東. Владелец: 住友電気工業株式会社. Дата публикации: 2018-04-19.

Fabrication method for chip size package and non-chip size package semiconductor devices

Номер патента: US7632711B2. Автор: Makoto Terui. Владелец: Oki Semiconductor Co Ltd. Дата публикации: 2009-12-15.

System and method for automatically identifying defect-based test coverage gaps in semiconductor devices

Номер патента: IL303364A. Автор: . Владелец: KLA Corp. Дата публикации: 2023-08-01.

Method for arrangement of a buried capacitor and a buried capacitor arranged according to said method

Номер патента: TW385515B. Автор: Torbjoern Larsson,Jonas Joensson. Владелец: Ericsson Telefon Ab L M. Дата публикации: 2000-03-21.

Method for arrangement of a buried capacitor, and a buried capacitor arranged according to said method

Номер патента: CA2292664A1. Автор: Jonas Jonsson,Torbjorn Larsson. Владелец: Individual. Дата публикации: 1998-12-10.

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Номер патента: US20220139919A1. Автор: Li Sen,Liu Tao,Wan Qiang,XU Penghui. Владелец: . Дата публикации: 2022-05-05.

Electronic apparatus, method for optimize of de-coupling capacitor and computer-readable recording medium

Номер патента: KR101869303B1. Автор: 이상호,박승훈,정동열,천정남. Владелец: 에이치피프린팅코리아 주식회사. Дата публикации: 2018-06-20.

Structure and formation method of semiconductor device structure

Номер патента: US09905633B1. Автор: Chi-Han YANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-02-27.

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Номер патента: US20050287758A1. Автор: Jea Kim. Владелец: DongbuAnam Semiconductor Inc. Дата публикации: 2005-12-29.

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Номер патента: US20230015120A1. Автор: Tao Liu,Jun Xia,Penghui Xu,Sen Li,Qiang Wan,Kangshu ZHAN. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-01-19.

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Номер патента: US20230298899A1. Автор: Jun Xia,Qiang Wan,Kangshu ZHAN. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-09-21.

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Номер патента: US20140367864A1. Автор: Hiroyuki Fujimoto. Владелец: Longitude Semiconductor SARL. Дата публикации: 2014-12-18.

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Номер патента: US20030181008A1. Автор: Kent Chang,Weng-Hsing Huang. Владелец: Macronix International Co Ltd. Дата публикации: 2003-09-25.

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Номер патента: WO2024015221A2. Автор: Victor Andoralov,Débora Sá,Vania PAIS,Joao PARADA,Felipe SCHMIDT,Rui A. MONTEIRO. Владелец: KEMET ELECTRONICS CORPORATION. Дата публикации: 2024-01-18.

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Номер патента: US20240029964A1. Автор: Victor Andoralov,Débora Sá,Vania PAIS,Joao PARADA,Felipe SCHMIDT,Rui A. MONTEIRO. Владелец: Kemet Electronics Corp. Дата публикации: 2024-01-25.

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Номер патента: WO2024015221A3. Автор: Victor Andoralov,Débora Sá,Vania PAIS,Joao PARADA,Felipe SCHMIDT,Rui A. MONTEIRO. Владелец: KEMET ELECTRONICS CORPORATION. Дата публикации: 2024-02-29.

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Номер патента: US20150146345A1. Автор: Smith Patrick,KAMATH Arvind,SCHER Erik,LI Jiang,Choi Criswell. Владелец: Thin Film Electronics ASA. Дата публикации: 2015-05-28.

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Номер патента: US8692235B2. Автор: Ten-Chin Wen,Sung-Nien Hsieh,Tzung-Fang Guo,Wei-Chou Hsu,Chen-Yan Li. Владелец: National Cheng Kung University NCKU. Дата публикации: 2014-04-08.

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Номер патента: US6903922B2. Автор: Takashi Kono,Mitsunori Sano. Владелец: NEC Tokin Corp. Дата публикации: 2005-06-07.

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Номер патента: US20130174393A1. Автор: INAHARA Junichi. Владелец: ESPEC CORP.. Дата публикации: 2013-07-11.

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Номер патента: US20160104912A1. Автор: Junichi Inahara. Владелец: Individual. Дата публикации: 2016-04-14.

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Номер патента: US20160141108A1. Автор: INAHARA Junichi. Владелец: . Дата публикации: 2016-05-19.

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Номер патента: US20200347222A1. Автор: NAKAMURA Kasumi,KAWABATA Yasunori,FUKUHARA Tatsuhito,IWAYA Takahide. Владелец: . Дата публикации: 2020-11-05.

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Номер патента: TW201220339A. Автор: Junichi Inahara. Владелец: Espec Corp. Дата публикации: 2012-05-16.

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Номер патента: US20160300665A1. Автор: Philip M. Lessner,Qingping Chen,Liancai Ning. Владелец: Kemet Electronics Corp. Дата публикации: 2016-10-13.

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Номер патента: US20170062144A1. Автор: Zhao Ri-an,Zhang Lili,TAN Daniel Qi,SULLIVAN Jeffrey S.,Flanagan Kevin Warner. Владелец: . Дата публикации: 2017-03-02.

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Номер патента: US20180244526A1. Автор: TANG JIE,Cheng Qian,Qin Luchang,SHINYA Norio. Владелец: . Дата публикации: 2018-08-30.

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Номер патента: US20150291431A1. Автор: TANG JIE,Cheng Qian,Qin Luchang,SHINYA Norio. Владелец: . Дата публикации: 2015-10-15.

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Номер патента: EP1699062A1. Автор: Kiyonori c/o TDK Corporation HINOKI,Kazuo c/o TDK Corporation KATAI,Hideki c/o TDK Corporation TANAKA,Yosuke c/o TDK Corporation MIYAKI,Tsuyoshi c/o TDK Corporation ICHIKI. Владелец: TDK Corp. Дата публикации: 2006-09-06.

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Номер патента: AU2001279571A1. Автор: Janos Giber,Holger Zillgen,Melanie Stenzel. Владелец: EPCOS AG. Дата публикации: 2002-03-22.

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Номер патента: FR2685535B1. Автор: Alain Sebillotte,Serge Theoleyre. Владелец: Merlin Gerin SA. Дата публикации: 1994-02-18.

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Номер патента: DE2109619A1. Автор: John Raschiotto Roger James Greenville S C Piper (VStA). Владелец: Union Carbide Corp. Дата публикации: 1971-09-16.

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Номер патента: FR2567679B1. Автор: Gordon Ross Love,Richard James Millard. Владелец: Sprague Electric Co. Дата публикации: 1988-04-29.

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Номер патента: WO1995003618A1. Автор: Ronan Stephan,Michel Bramoulle. Владелец: Compagnie Europeenne De Composants Electroniques Lcc. Дата публикации: 1995-02-02.

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Номер патента: JP2003257783A. Автор: Michiharu Kamiya,三千治神谷,Mikio Sakata,Masaharu Yamane,正治山根,幹夫坂田. Владелец: Matsushita Electric Industrial Co Ltd. Дата публикации: 2003-09-12.

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Номер патента: US20150294794A1. Автор: TAKAGI Kazutaka. Владелец: KABUSHIKI KAISHA TOSHIBA. Дата публикации: 2015-10-15.

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Номер патента: US09972722B2. Автор: Fujio Masuoka,Hiroki Nakamura. Владелец: Unisantis Electronics Singapore Pte Ltd. Дата публикации: 2018-05-15.

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Номер патента: US20150303296A1. Автор: Fujio Masuoka,Hiroki Nakamura. Владелец: Unisantis Electronics Singapore Pte Ltd. Дата публикации: 2015-10-22.

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Номер патента: US20070218637A1. Автор: Yoshiko Harada,Naotada Ogura. Владелец: Yamaha Corp. Дата публикации: 2007-09-20.

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Номер патента: US20180061644A1. Автор: Anton Mauder,Hans-Joachim Schulze,Johannes Georg Laven,Werner Schustereder. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2018-03-01.

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Номер патента: US12057372B2. Автор: Zhiliang Xia,Zhong Zhang,Kun Zhang,Linchun Wu,Wenxi Zhou. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-08-06.

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Номер патента: US09997410B1. Автор: Ching-Yi Hsu,Pi-Kuang Chuang,Po-Sheng Hu. Владелец: Vanguard International Semiconductor Corp. Дата публикации: 2018-06-12.

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Номер патента: US20240290823A1. Автор: Jie Chen,Ming-Fa Chen,Hsien-Wei Chen,Ying-Ju Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-29.

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Номер патента: US20230282517A1. Автор: Chih-Cheng Liu. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-09-07.

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Номер патента: US20020127869A1. Автор: Taizo Oku,Junichi Aoki,Youichi Yamamoto,Takashi Koromokawa. Владелец: Individual. Дата публикации: 2002-09-12.

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Номер патента: US20020013066A1. Автор: Kazuo Maeda,Taizo Oku,Junichi Aoki,Youichi Yamamoto,Takashi Koromokawa. Владелец: Canon Marketing Japan Inc. Дата публикации: 2002-01-31.

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Номер патента: RU2717264C1. Автор: Никита Владимирович Рогозин,Виталий Владимирович Побединский. Владелец: Акционерное общество "Научно-исследовательский институт электронной техники". Дата публикации: 2020-03-19.

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Номер патента: US9735258B2. Автор: SANGHOON Lee,Karthik Balakrishnan,Pouya Hashemi. Владелец: International Business Machines Corp. Дата публикации: 2017-08-15.

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Номер патента: US9613873B1. Автор: SANGHOON Lee,Karthik Balakrishnan,Pouya Hashemi. Владелец: International Business Machines Corp. Дата публикации: 2017-04-04.

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Номер патента: US20170263507A1. Автор: SANGHOON Lee,Karthik Balakrishnan,Pouya Hashemi. Владелец: International Business Machines Corp. Дата публикации: 2017-09-14.

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Номер патента: US20170179251A1. Автор: SANGHOON Lee,Karthik Balakrishnan,Pouya Hashemi. Владелец: International Business Machines Corp. Дата публикации: 2017-06-22.

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Номер патента: US20240250143A1. Автор: Jyun-De Wu,Yi-Chen Wang,Yi-Chun Chang,Te-Chih Hsiung,Yuan-Tien Tu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-25.

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Номер патента: US12051700B2. Автор: Chung-Ting Ko,Tai-Chun Huang,Li-Fong Lin,Wan Chen Hsieh. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-30.

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Номер патента: US20240250019A1. Автор: Ming-Da Cheng,Po-Hao Tsai,Ting-Li Yang,Yung-Han Chuang,Hsueh-Sheng Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-25.

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Номер патента: US09690896B2. Автор: Jae-Woo Seo,Jaeha LEE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-06-27.

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Номер патента: US6008076A. Автор: Takeshi Fukada,Naoya Sakamoto,Yukio Yamauchi,Mitsufumi Codama. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 1999-12-28.

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Номер патента: US12094723B2. Автор: Yuejiao Shu,Ming-Pu Tsai. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-09-17.

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Номер патента: US20220293466A1. Автор: Dongxue Zhang,Ge-Wei Lin. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2022-09-15.

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Номер патента: US12051618B2. Автор: Yuchen Wang,Nianwang YANG. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-07-30.

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Номер патента: EP4181182A1. Автор: Hiroshi Takeno,Tsuyoshi Ohtsuki. Владелец: Shin Etsu Handotai Co Ltd. Дата публикации: 2023-05-17.

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Номер патента: US20240088051A1. Автор: Hiroaki Fujita,Kazuhiko Kurafuchi,Takashi Masuko,Shinji Shimaoka,Shunsuke Otake,Kazuyuki Mitsukura. Владелец: Resonac Corp. Дата публикации: 2024-03-14.

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Номер патента: US20210366764A1. Автор: Jochen Kraft,Georg Parteder,Raffaele Coppeta. Владелец: ams AG. Дата публикации: 2021-11-25.

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Номер патента: US12062610B2. Автор: ChihCheng LIU. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-08-13.

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Номер патента: US20240321818A1. Автор: Tomoaki Shibata,Shizu FUKUZUMI,Toshiaki Shirasaka. Владелец: Resonac Corp. Дата публикации: 2024-09-26.

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Номер патента: US09859157B1. Автор: Chih-Chao Yang,Conal E. Murray. Владелец: International Business Machines Corp. Дата публикации: 2018-01-02.

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Номер патента: US20240040765A1. Автор: Yue Zhuo. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-02-01.

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Номер патента: US20170283581A1. Автор: Michihiro Sugo,Kazunori Kondo,Yoichiro Ichioka. Владелец: Shin Etsu Chemical Co Ltd. Дата публикации: 2017-10-05.

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Номер патента: US20230053370A1. Автор: Jie Bai,Mengmeng Yang. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-02-23.

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Номер патента: US9040410B2. Автор: XIN YANG. Владелец: CSMC Technologies Fab2 Co Ltd. Дата публикации: 2015-05-26.

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Номер патента: EP3933903A1. Автор: Pingheng WU. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2022-01-05.

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Номер патента: US20070072424A1. Автор: Jung-hyun Lee,Sang-Bong Bang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2007-03-29.

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Номер патента: US10079157B2. Автор: YONG Song,Doo Hyun Park,Eun Young Lee,Jong Sik Paek,Seong Min Seo,Pil Je Sung,Seo Yeon Ahn,Sung Geun Kang,Wang Gu Lee. Владелец: Amkor Technology Inc. Дата публикации: 2018-09-18.

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Номер патента: US20150236158A1. Автор: Chin-Cheng Chien,Chun-Jen Chen,Tien-Wei YU,Tsung-Mu Yang,Tien-Chen Chan,Ming-Hua Chang,Yu-Shu Lin,I-Cheng Hu,Chieh-Lung Wu. Владелец: United Microelectronics Corp. Дата публикации: 2015-08-20.

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Номер патента: US20230086464A1. Автор: Meng-Cheng Chen. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-03-23.

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Номер патента: US20140145354A1. Автор: XIN YANG. Владелец: CSMC Technologies Fab2 Co Ltd. Дата публикации: 2014-05-29.

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Номер патента: US20240266189A1. Автор: YONG Song,Doo Hyun Park,Eun Young Lee,Jong Sik Paek,Seong Min Seo,Pil Je Sung,Seo Yeon Ahn,Sung Geun Kang,Wang Gu Lee. Владелец: Amkor Technology Singapore Holding Pte Ltd. Дата публикации: 2024-08-08.

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Номер патента: US20230079234A1. Автор: Junbo PAN,Jinghao WANG. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-03-16.

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Номер патента: US09754783B2. Автор: Katsunori Ueno,Ryo Tanaka,Masaharu Edo,Shinya Takashima. Владелец: Fuji Electric Co Ltd. Дата публикации: 2017-09-05.

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Номер патента: US20160322261A1. Автор: Fujio Masuoka,Hiroki Nakamura. Владелец: Unisantis Electronics Singapore Pte Ltd. Дата публикации: 2016-11-03.

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Номер патента: US9524940B2. Автор: Thomas Fischer,Carsten Ahrens,Andre Schmenn,Damian Sojka. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2016-12-20.

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Номер патента: US20160322251A1. Автор: Ryuichi Kimura,Naohide Takamoto. Владелец: Nitto Denko Corp. Дата публикации: 2016-11-03.

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Номер патента: US20090317935A1. Автор: Atsushi Toda,Hirofumi Sumi. Владелец: Sony Corp. Дата публикации: 2009-12-24.

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Номер патента: US20240332395A1. Автор: Zeyong CHEN,Yunbo Chen,Yohtz Julian CHANG,Canyang HUANG. Владелец: Guangzhou Cansemi Technology Inc. Дата публикации: 2024-10-03.

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Номер патента: US09941285B2. Автор: Jae-Houb CHUN,Jeong-Sub LIM. Владелец: SK hynix Inc. Дата публикации: 2018-04-10.

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Номер патента: US09837376B2. Автор: Dong Jin Kim,Do Hyung Kim,Jin Han Kim,Glenn Rinne,Yeong Beom Ko. Владелец: Amkor Technology Inc. Дата публикации: 2017-12-05.

Method for producing semiconductor device and semiconductor device

Номер патента: US09837317B2. Автор: Fujio Masuoka,Hiroki Nakamura. Владелец: Unisantis Electronics Singapore Pte Ltd. Дата публикации: 2017-12-05.

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Номер патента: US20120001302A1. Автор: Hisashi Matsumura,Kazuyoshi Itoh,Shunro Fuke,Yasuo Kanematsu. Владелец: Osaka University NUC. Дата публикации: 2012-01-05.

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Номер патента: US20160343879A1. Автор: Fujio Masuoka,Hiroki Nakamura. Владелец: Unisantis Electronics Singapore Pte Ltd. Дата публикации: 2016-11-24.

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Номер патента: US20240055361A1. Автор: Tsung-Yu Yang,Shan-Shi Huang,Shin-Hung Li,Yuan Yu Chung,Che-Hua CHANG,Ruei Jhe Tsao. Владелец: United Microelectronics Corp. Дата публикации: 2024-02-15.

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Номер патента: US20230230926A1. Автор: Hiroshi Takeno,Tsuyoshi Ohtsuki. Владелец: Shin Etsu Handotai Co Ltd. Дата публикации: 2023-07-20.

Manufacturing method for semiconductor device, manufacturing apparatus for semiconductor device, and semiconductor device

Номер патента: US20120217497A1. Автор: Fumito Shoji,Noriteru Yamada. Владелец: Toshiba Corp. Дата публикации: 2012-08-30.

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Номер патента: EP1965415A3. Автор: Hideaki Tanaka,Tetsuya Hayashi,Shigeharu Yamagami,Masakatsu Hoshi. Владелец: Nissan Motor Co Ltd. Дата публикации: 2009-04-01.

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Номер патента: US20230009114A1. Автор: Ling-Yi Chuang. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-01-12.

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Номер патента: US20080203401A1. Автор: Hideaki Tanaka,Tetsuya Hayashi,Shigeharu Yamagami,Masakatsu Hoshi. Владелец: Nissan Motor Co Ltd. Дата публикации: 2008-08-28.

Method for forming three-dimensional integrated wiring structure and semiconductor structure thereof

Номер патента: WO2019041956A1. Автор: Zhenyu Lu,Jun Chen,Siping Hu,Jifeng Zhu. Владелец: Yangtze Memory Technologies Co., Ltd.. Дата публикации: 2019-03-07.

Method for manufacturing semiconductor device and semiconductor device

Номер патента: US20070020850A1. Автор: Masaru Takaishi. Владелец: Individual. Дата публикации: 2007-01-25.

Method for manufacturing semiconductor device, and semiconductor device

Номер патента: US9893108B2. Автор: Toshifumi Iwasaki. Владелец: Renesas Electronics Corp. Дата публикации: 2018-02-13.

Method for manufacturing semiconductor device and semiconductor device

Номер патента: US20040191996A1. Автор: Masaru Takaishi. Владелец: ROHM CO LTD. Дата публикации: 2004-09-30.

Manufacturing method of semiconductor device and semiconductor device

Номер патента: US09947553B2. Автор: Mamoru Yamagami,Yasuhiro Fuwa. Владелец: ROHM CO LTD. Дата публикации: 2018-04-17.

Method for manufacturing semiconductor device, and semiconductor device

Номер патента: US09893108B2. Автор: Toshifumi Iwasaki. Владелец: Renesas Electronics Corp. Дата публикации: 2018-02-13.

Method for manufacturing a semiconductor wafer, and semiconductor device having a low concentration of interstitial oxygen

Номер патента: US09728395B2. Автор: Hans-Joachim Schulze,Francisco Javier Santos Rodriguez,Helmut Oefner,Nico Caspary,Reinhard Ploss,Mohammad Momeni. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2017-08-08.

Method for producing semiconductor device and semiconductor device

Номер патента: US09647142B2. Автор: Fujio Masuoka,Hiroki Nakamura. Владелец: Unisantis Electronics Singapore Pte Ltd. Дата публикации: 2017-05-09.

Method for manufacturing semiconductor device and semiconductor device

Номер патента: US20220319908A1. Автор: Zhan Ying,Kui Zhang. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2022-10-06.

System and method for forming solder bumps

Номер патента: WO2021018466A1. Автор: Jae-Woong Nah,Jeng-Bang Yau,Peter Jerome Sorce,Eric Peter Lewandowski. Владелец: Ibm United Kingdom Limited. Дата публикации: 2021-02-04.

Method for forming gate oxide layer in semiconductor device

Номер патента: US20050142770A1. Автор: Yong Choi. Владелец: DongbuAnam Semiconductor Inc. Дата публикации: 2005-06-30.

Method for manufacturing semiconductor device and semiconductor device

Номер патента: US20230352317A1. Автор: Ling-Yi Chuang. Владелец: Individual. Дата публикации: 2023-11-02.

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Номер патента: US20160284764A1. Автор: Teruyuki Mine. Владелец: SanDisk Technologies LLC. Дата публикации: 2016-09-29.

Method for manufacturing semiconductor device, and semiconductor device

Номер патента: US20170309547A1. Автор: Akito Shimizu,Sadayuki Moroi,Kenji Nishikawa,Tomoo Imura. Владелец: Renesas Electronics Corp. Дата публикации: 2017-10-26.

Methods for forming contact structures and semiconductor devices thereof

Номер патента: US20240282673A1. Автор: Zhiliang Xia,Zhong Zhang,Kun Zhang,Linchun Wu,Wenxi Zhou. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-08-22.

Method for producing a semiconductor device and semiconductor device

Номер патента: WO2024170052A1. Автор: Yulieth Cristina Arango,Giovanni ALFIERI,Gianpaolo Romano. Владелец: Hitachi Energy Ltd. Дата публикации: 2024-08-22.

Methods for manufacturing semiconductor devices, and semiconductor devices

Номер патента: US12114483B2. Автор: Dandan He. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-10-08.

Method for producing semiconductor device and semiconductor device

Номер патента: US09893179B2. Автор: Fujio Masuoka,Hiroki Nakamura. Владелец: Unisantis Electronics Singapore Pte Ltd. Дата публикации: 2018-02-13.

Method for producing semiconductor device and semiconductor device

Номер патента: US09865741B2. Автор: Fujio Masuoka,Hiroki Nakamura. Владелец: Unisantis Electronics Singapore Pte Ltd. Дата публикации: 2018-01-09.

Methods for fabricating a semiconductor device and semiconductor devices fabricated by the same

Номер патента: US09761603B2. Автор: Jae-Hwang Sim,Joon-Sung LIM,Min-Sung Song. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-09-12.

Method for filling gaps of semiconductor device and semiconductor device formed by the same

Номер патента: US09685319B2. Автор: Yu-Ren Wang,Yi-Hui Lin,Ping-Wei Huang,Keng-Jen Lin. Владелец: United Microelectronics Corp. Дата публикации: 2017-06-20.

Manufacturing method for semiconductor device, semiconductor device, and semiconductor apparatus

Номер патента: US20240234631A9. Автор: Yoshinobu Kawaguchi,Takeshi Kamikawa,Kentaro Murakawa. Владелец: Kyocera Corp. Дата публикации: 2024-07-11.

Method for manufacturing semiconductor device, and semiconductor device

Номер патента: US20150194368A1. Автор: Akito Shimizu,Sadayuki Moroi,Kenji Nishikawa,Tomoo Imura. Владелец: Renesas Electronics Corp. Дата публикации: 2015-07-09.

Semiconductor dielectric structure and method for making the same

Номер патента: US20010023989A1. Автор: Milind Weling,Rao Annapragada. Владелец: Philips Electronics North America Corp. Дата публикации: 2001-09-27.

Method for manufacturing semiconductor device and semiconductor device

Номер патента: US20170025321A1. Автор: Takeshi Watanabe,Masaya Shima,Soichi Homma,Yuusuke Takano,Katsunori Shibuya. Владелец: Toshiba Corp. Дата публикации: 2017-01-26.

Method for fabricating semiconductor devices

Номер патента: US20020106863A1. Автор: In-Chul Jung,Seung-Hoon Sa. Владелец: Hynix Semiconductor Inc. Дата публикации: 2002-08-08.

Method for forming semiconductor structure, and semiconductor structure

Номер патента: US20230119755A1. Автор: Qing LUO. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-04-20.

Method for manufacturing semiconductor device and semiconductor device

Номер патента: US20170077040A1. Автор: Takeshi Watanabe,Yuusuke Takano. Владелец: Toshiba Corp. Дата публикации: 2017-03-16.

Semiconductor device and method for forming semiconductor device

Номер патента: US12100657B2. Автор: Zhongming Liu. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-09-24.

Semiconductor device, optical sensor device and semiconductor device manufacturing method

Номер патента: US09818895B2. Автор: Hiroshi Inada,Takashi Ishizuka,Hideaki Nakahata,Yasuhiro Iguchi,Katsushi Akita,Youichi Nagai,Kei Fujii. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2017-11-14.

Method for fabricating semiconductor device and semiconductor device

Номер патента: US09653592B2. Автор: Shuichi Nishizawa. Владелец: Sumitomo Electric Device Innovations Inc. Дата публикации: 2017-05-16.

Adapter board and method for forming same, packaging method, and package structure

Номер патента: US20210398892A1. Автор: Chen Wei,CAI Qiaoming,Yang Lie Yong,Lu Xiao Yu. Владелец: Semiconductor Manufacturing North China Beijing Corp. Дата публикации: 2021-12-23.

Method for manufacturing semiconductor device, and semiconductor device

Номер патента: US20160247682A1. Автор: Susumu Harada. Владелец: Nichia Corp. Дата публикации: 2016-08-25.

Semiconductor structure, method for manufacturing semiconductor structure, and semiconductor device

Номер патента: US20240057351A1. Автор: Ling-Yi Chuang,Kaimin Lv. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-02-15.

Packaging structure, manufacturing method therefor and semiconductor device

Номер патента: EP4307352A1. Автор: LIANG Chen,Hongwen Li,Kai Tian,Changhao QUAN,Yuxia Wang,Yingdong GUO. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-01-17.

Manufacturing method of semiconductor device and semiconductor manufacturing apparatus

Номер патента: US20160079102A1. Автор: Kazuhiro Murakami,Shinya Fukayama,Yukifumi Oyama. Владелец: Toshiba Corp. Дата публикации: 2016-03-17.

Manufacturing method for semiconductor device and semiconductor device

Номер патента: US20090309133A1. Автор: Kunihiro Miyazaki,Takayuki Ito,Takuo Ohashi,Kiyotaka Miyano,Kouji Matsuo,Kenichi Yoshino,Toshihiko Iinuma,Yusuke Oshiki,Takaharu Itani. Владелец: Individual. Дата публикации: 2009-12-17.

Method for manufacturing a semiconductor device using a patterned dielectric mask and semiconductor device

Номер патента: US12057311B2. Автор: Adrian Stefan Avramescu,Jens Mueller. Владелец: OSRAM Opto Semiconductors GmbH. Дата публикации: 2024-08-06.

Fabrication method for semiconductor device, exposure method, pattern correction method and semiconductor device

Номер патента: US7921386B2. Автор: Toshiyuki Ishimaru. Владелец: Sony Corp. Дата публикации: 2011-04-05.

Method for fabricating a semiconductor device having a device isolation trench

Номер патента: US8338246B2. Автор: Song Hyeuk Im. Владелец: Hynix Semiconductor Inc. Дата публикации: 2012-12-25.

Method for forming semiconductor device having epitaxial channel layer using laser treatment

Номер патента: US20020001890A1. Автор: Jung-Ho Lee. Владелец: Hyundai Electronics Industries Co Ltd. Дата публикации: 2002-01-03.

Method for aligning quantum dots and semiconductor device fabricated by using the same

Номер патента: US20020031900A1. Автор: Eun Kim,Kwang Kim,Yong Park. Владелец: Korea Advanced Institute of Science and Technology KAIST. Дата публикации: 2002-03-14.

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Номер патента: US20230197831A1. Автор: Hans Mertens,Boon Teik CHAN,Eugenio Dentoni Litta. Владелец: Interuniversitair Microelektronica Centrum vzw IMEC. Дата публикации: 2023-06-22.

Method for Forming a Semiconductor Device

Номер патента: US20230197522A1. Автор: Naoto Horiguchi,Julien Ryckaert,Boon Teik CHAN,Anne Vandooren. Владелец: Interuniversitair Microelektronica Centrum vzw IMEC. Дата публикации: 2023-06-22.

Method for Forming Isolation Layer in Semiconductor Devices

Номер патента: US20070166949A1. Автор: In Kyu Chun. Владелец: Dongbu Electronics Co Ltd. Дата публикации: 2007-07-19.

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Номер патента: US20120217478A1. Автор: Hiroshi Inada,Takashi Ishizuka,Hideaki Nakahata,Yasuhiro Iguchi,Katsushi Akita,Youichi Nagai,Kei Fujii. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2012-08-30.

Semiconductor devices and methods for forming semiconductor devices

Номер патента: US20040097048A1. Автор: Kwan Koh. Владелец: Anam Semiconductor Inc. Дата публикации: 2004-05-20.

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Номер патента: US12132010B2. Автор: Ming Liu,Anthony M. Coppola,Seongchan Pack. Владелец: GM GLOBAL TECHNOLOGY OPERATIONS LLC. Дата публикации: 2024-10-29.

Semiconductor device manufacturing method and semiconductor device manufacturing system

Номер патента: US12136569B2. Автор: Mitsuhiko Ogihara. Владелец: Filnex Inc. Дата публикации: 2024-11-05.

Semiconductor devices with enhanced deterministic doping and related methods

Номер патента: US09716147B2. Автор: Robert J. Mears. Владелец: Atomera Inc. Дата публикации: 2017-07-25.

Method for manufacturing semiconductor device and semiconductor device

Номер патента: US09646908B2. Автор: Takeshi Watanabe,Masaya Shima,Soichi Homma,Yuusuke Takano,Katsunori Shibuya. Владелец: Toshiba Corp. Дата публикации: 2017-05-09.

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Номер патента: US09627295B2. Автор: Anurag Jindal,Hongqi Li,Jian He,Kyle K. Kirby,Lalapet Rangan VASUDEVAN. Владелец: Micron Technology Inc. Дата публикации: 2017-04-18.

Method for thinning, metalizing, and dicing a semiconductor wafer, and semiconductor device made using the method

Номер патента: US09564401B2. Автор: Hiroyuki NUMAGUCHI. Владелец: Lapis Semiconductor Co Ltd. Дата публикации: 2017-02-07.

Semiconductor device and method for manufacturing same

Номер патента: US20150364427A1. Автор: Takashi KANSAKU. Владелец: Longitude Semiconductor SARL. Дата публикации: 2015-12-17.

Protective structures for bond wires, methods for forming same, and test apparatus including such structures

Номер патента: US20020031847A1. Автор: Salman Akram. Владелец: Individual. Дата публикации: 2002-03-14.

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Номер патента: US20240145379A1. Автор: Mirng-Ji Lii,Chiang-Jui Chu,Kuo-Chin Chang,Yen-Kun Lai,Cheng-Nan Lin,Ching-Ho Cheng,Wei-Hsiang TU,Chien Hao HSU. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-05-02.

Semiconductor package, method for fabricating the same, and semiconductor device

Номер патента: US7402898B2. Автор: Katsutoshi Shimizu,Tatsuya Hirano,Hisaho Inao. Владелец: Matsushita Electric Industrial Co Ltd. Дата публикации: 2008-07-22.

Method for manufacturing semiconductor device, and semiconductor wafer

Номер патента: US20230160104A1. Автор: Takashi Ishida,Shoichi Onda,Daisuke Kawaguchi,Jun Kojima,Chiaki Sasaoka,Yoshitaka Nagasato,Junji Ohara. Владелец: Mirise Technologies Corp. Дата публикации: 2023-05-25.

Semiconductor device manufacturing method and semiconductor device

Номер патента: US20070120185A1. Автор: Toshiaki Komukai,Hideaki Harakawa. Владелец: Individual. Дата публикации: 2007-05-31.

Method for manufacturing semiconductor device and semiconductor device

Номер патента: US7855125B2. Автор: Takaoki Sasaki. Владелец: Seiko Epson Corp. Дата публикации: 2010-12-21.

Method for mounting a semiconductor chip on a substrate and semiconductor device adapted for mounting on a substrate

Номер патента: US20010038152A1. Автор: I-Ming Chen. Владелец: Individual. Дата публикации: 2001-11-08.

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Номер патента: MY195984A. Автор: Jun Chiba,Yuki Antoku,Shota KAWANO. Владелец: Tanaka Electronics Ind. Дата публикации: 2023-02-27.

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Номер патента: US20200395330A1. Автор: Jun Chiba,Yuki Antoku,Shota KAWANO. Владелец: Tanaka Denshi Kogyo KK. Дата публикации: 2020-12-17.

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Номер патента: US7041557B2. Автор: Ji-hoon Park,Sung-Woo Park,Jeong-Uk Han,Sung-taeg Kang,Bo-Young Seo,Seung-Beom Yoon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2006-05-09.

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Номер патента: US09911811B2. Автор: Yusuke Fukuda,Yoshiyuki Watanabe. Владелец: Shindengen Electric Manufacturing Co Ltd. Дата публикации: 2018-03-06.

Method for manufacturing a semiconductor device

Номер патента: US09806187B2. Автор: Martin Poelzl. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2017-10-31.

Silicon carbide semiconductor devices having nitrogen-doped interface

Номер патента: US09613810B2. Автор: Michael MacMillan. Владелец: GLOBAL POWER TECHNOLOGIES GROUP Inc. Дата публикации: 2017-04-04.

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Номер патента: US20150179528A1. Автор: Shukun Yu,Qingsong WEI. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2015-06-25.

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Номер патента: EP4391040A1. Автор: Anshul Gupta,Hans Mertens. Владелец: Interuniversitair Microelektronica Centrum vzw IMEC. Дата публикации: 2024-06-26.

Semiconductor device structure and method for forming the same

Номер патента: US20240243186A1. Автор: Chih-Hao Wang,Chung-Wei Hsu,Mao-Lin Huang,Lung-Kun Chu,Jia-Ni YU,Kuo-Cheng Chiang,Chun-Fu Lu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-18.

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Номер патента: US20210305198A1. Автор: Roland Rupp,Carsten Von Koblinski,Matteo Piccin,Chiew Li Tai,Daniel PEDONE,Jia Yi WONG. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2021-09-30.

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Номер патента: MY195404A. Автор: Jun Chiba,Yuki Antoku,Shota KAWANO. Владелец: Tanaka Electronics Ind. Дата публикации: 2023-01-19.

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Номер патента: US20200303237A1. Автор: Shogo Shibata,Kosuke Yamaguchi,Maki Hasegawa,Shuhei Yokoyama,Seiya SUGIMACHI. Владелец: Mitsubishi Electric Corp. Дата публикации: 2020-09-24.

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Номер патента: US20240250025A1. Автор: Kazuyuki Mitsukura,Masaya TOBA. Владелец: Resonac Corp. Дата публикации: 2024-07-25.

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Номер патента: US20140097494A1. Автор: Fujio Masuoka,Hiroki Nakamura. Владелец: Unisantis Electronics Singapore Pte Ltd. Дата публикации: 2014-04-10.

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Номер патента: US20210091033A1. Автор: YUAN Li,Liang Ma,Jie Pan,Xianjin Wan,Si Ping HU,Shu Liang Lv. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-03-25.

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Номер патента: US20210217619A1. Автор: Chiharu Ota,Johji Nishio. Владелец: Toshiba Corp. Дата публикации: 2021-07-15.

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Номер патента: US20190006268A1. Автор: Masatoshi Sugiura,Hiroi Oka. Владелец: Renesas Electronics Corp. Дата публикации: 2019-01-03.

Method for manufacturing semiconductor device, and semiconductor device

Номер патента: US8101462B2. Автор: Shigehisa Tajimi. Владелец: Seiko Epson Corp. Дата публикации: 2012-01-24.

Method for forming silicide of semiconductor device

Номер патента: US8105910B2. Автор: Hee-Jae Shin. Владелец: Dongbu HitekCo Ltd. Дата публикации: 2012-01-31.

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Номер патента: US20240105782A1. Автор: Jing Yao,Jian Yang,Guangming Wang,Chunjun Liu,Tonghua Peng,Yanfang LOU,Qing Yong. Владелец: Jiangsu Tankeblue Semiconductor Co Ltd. Дата публикации: 2024-03-28.

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Номер патента: US20020039827A1. Автор: Jai-Sun Roh. Владелец: Hyundai Electronics Industries Co Ltd. Дата публикации: 2002-04-04.

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Номер патента: US20110201193A1. Автор: Fumihiro Bekku. Владелец: Renesas Electronics Corp. Дата публикации: 2011-08-18.

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Номер патента: US20240258244A1. Автор: Joanna NASSAR. Владелец: Micron Technology Inc. Дата публикации: 2024-08-01.

System and method for depositing underfill material

Номер патента: US20240038716A1. Автор: Choo Par Tan,Ee May Lim,Chee Ern NG. Владелец: Western Digital Technologies Inc. Дата публикации: 2024-02-01.

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Номер патента: US20210313449A1. Автор: Pinyen Lin,Li-Te Lin,Han-Yu Lin,Tze-Chung Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-10-07.

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Номер патента: US20240322009A1. Автор: Po-Chi WU,Ming-Chia Tai,Chang-Yin Chen,Wen-Han Fang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-26.

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Номер патента: US12119283B2. Автор: Luguang WANG. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-10-15.

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Номер патента: US20240334608A1. Автор: Ming-Chih Yew,Shin-puu Jeng,Po-Yao Lin,Po-Chen LAI,Chia-Kuei Hsu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-03.

Method for manufacturing semiconductor device and semiconductor device

Номер патента: US20240321819A1. Автор: Sadatoshi Murakami,Atsushi Oga,Miki TOSHIMA. Владелец: Kioxia Corp. Дата публикации: 2024-09-26.

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Номер патента: US09865639B2. Автор: Kan Shimizu,Keishi Inoue. Владелец: Sony Corp. Дата публикации: 2018-01-09.

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Номер патента: US09824882B2. Автор: Luigi Esposito,Stefano Losa,Raffaella Pezzuto,Roberto Campedelli,Matteo Perletti,Mikel Azpeitia Urquia. Владелец: STMICROELECTRONICS SRL. Дата публикации: 2017-11-21.

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Номер патента: US09799665B2. Автор: Shih-Chang Liu,Chang-Ming Wu,Tsung-Hsueh Yang,Chung-Chiang Min. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-10-24.

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Номер патента: US09780179B2. Автор: Fujio Masuoka,Hiroki Nakamura. Владелец: Unisantis Electronics Singapore Pte Ltd. Дата публикации: 2017-10-03.

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Номер патента: US09758373B2. Автор: Luigi Esposito,Stefano Losa,Raffaella Pezzuto,Roberto Campedelli,Matteo Perletti,Mikel Azpeitia Urquia. Владелец: STMICROELECTRONICS SRL. Дата публикации: 2017-09-12.

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Номер патента: US09741762B2. Автор: Swarnal Borthakur,Marc Sulfridge. Владелец: Micron Technology Inc. Дата публикации: 2017-08-22.

Semiconductor-metal-on-insulator structures, methods of forming such structures, and semiconductor devices including such structures

Номер патента: US09608119B2. Автор: Ming Zhang,John K. Zahurak,Andrew M. Bayless,Sanh D. Tang. Владелец: Micron Technology Inc. Дата публикации: 2017-03-28.

Method for producing semiconductor device and semiconductor device

Номер патента: US09595476B2. Автор: Fujio Masuoka,Hiroki Nakamura. Владелец: Unisantis Electronics Singapore Pte Ltd. Дата публикации: 2017-03-14.

Method for forming local buried dielectric insulation region of active part of transistors with three-dimensional structure of shell (finfet)

Номер патента: RU2670248C1. Автор: Владимир Александрович Нагнойный,Глеб Владимирович Баранов. Владелец: Акционерное общество "Научно-исследовательский институт молекулярной электроники". Дата публикации: 2018-10-19.

Semiconductor device structure with source/drain structure and method for forming the same

Номер патента: US20240222434A1. Автор: Feng-Ming Chang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-04.

Method for manufacturing semiconductor device and semiconductor device manufactured thereby

Номер патента: US20230207683A1. Автор: Junghee Park,Dae Hwan Chun,Youngkyun Jung,NackYong JOO,Jungyeop Hong. Владелец: Kia Corp. Дата публикации: 2023-06-29.

Method for producing semiconductor device and semiconductor device

Номер патента: US20150303195A1. Автор: Fujio Masuoka,Hiroki Nakamura. Владелец: Unisantis Electronics Singapore Pte Ltd. Дата публикации: 2015-10-22.

Method for bonding semiconductor devices, method for forming semiconductor structure and system for performing the method

Номер патента: US11916037B2. Автор: Jen-Yuan Chang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-02-27.

Asymmetric finfet in memory device, method of fabricating same and semiconductor device

Номер патента: US20200273863A1. Автор: Rongfu ZHU,Dingyou LIN. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2020-08-27.

Semiconductor device structure with protection cap and method for forming the same

Номер патента: US20190371653A1. Автор: Chen-Shien Chen,Hon-Lin Huang,Chin-Yu Ku,Wei-Li Huang,Chi-Cheng Chen,Ting-Li Yang,Sheng-Pin Yang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2019-12-05.

Packaging structure and manufacturing method therefor, and semiconductor device

Номер патента: EP4307367A1. Автор: LIANG Chen,Kai Tian,Mingxing ZUO. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-01-17.

Method for manufacturing a semiconductor device and semiconductor device

Номер патента: US20140131791A1. Автор: Fujio Masuoka,Hiroki Nakamura. Владелец: Unisantis Electronics Singapore Pte Ltd. Дата публикации: 2014-05-15.

Method for bonding semiconductor devices, method for forming semiconductor structure and system for performing the method

Номер патента: US20230238354A1. Автор: Jen-Yuan Chang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-07-27.

Method for forming metal wires in semiconductor device

Номер патента: US20050233579A1. Автор: Ihl Cho. Владелец: Individual. Дата публикации: 2005-10-20.

Method for manufacturing semiconductor device and semiconductor device

Номер патента: US20230282572A1. Автор: Shuai Guo. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-09-07.

Method for forming semiconductor device structure with conductive line

Номер патента: US20190139895A1. Автор: Yun Chang,Chi-Cherng Jeng,Shyh-Wei Cheng,Chen-Chieh Chiang,Jung-Chi Jeng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2019-05-09.

Method for manufacturing semiconductor device and semiconductor device manufacturing system

Номер патента: US7846792B2. Автор: Masanori Terahara. Владелец: Fujitsu Semiconductor Ltd. Дата публикации: 2010-12-07.

Method for forming an electrical contact between a semiconductor film and a bulk handle wafer, and resulting structure

Номер патента: US20210233811A1. Автор: Didier Dutartre,Jean-Luc Huguenin,Jean-Pierre Carrere,Clement Pribat,Sarah Kuster. Владелец: STMICROELECTRONICS SA. Дата публикации: 2021-07-29.

Method For Processing Workpiece, Plasma Processing Apparatus And Semiconductor Device

Номер патента: US20230005739A1. Автор: FEI Yu,Junliang Li,Mengyang Xin. Владелец: Beijing E Town Semiconductor Technology Co Ltd. Дата публикации: 2023-01-05.

Semiconductor device structure and method for forming the same

Номер патента: US10050116B2. Автор: Hung-Wen Su,Ming-Hsing Tsai,Sheng-Hsuan Lin,Ya-Lien Lee,Hung-Chang Hsu,Rueijer Lin,Hsiao-Ping Liu,Yen-Shou Kao. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-08-14.

Method for fabricating of cell pitch reduced semiconductor device and semiconductor device

Номер патента: US20170194433A1. Автор: Seung Hyun Kim,Soo Chang Kang,Yong Won Lee,Dae Won HWANG. Владелец: MagnaChip Semiconductor Ltd. Дата публикации: 2017-07-06.

Manufacturing method for semiconductor chips and semiconductor wafer

Номер патента: WO2006075725A3. Автор: Kiyoshi Arita,Teruaki Nishinaka. Владелец: Teruaki Nishinaka. Дата публикации: 2007-02-08.

Method for Forming a Via Profile of Interconnect Structure of Semiconductor Device Structure

Номер патента: US20170194197A1. Автор: Che-Cheng Chang,Wei-Ting Chen,Wei-Yin Shiao,Tai-Shin Cheng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-07-06.

Semiconductor device and manufacturing method therefor

Номер патента: US20200006372A1. Автор: Feng Ji,Haoyu Chen,Qiwei Wang,Jinshuang Zhang. Владелец: Shanghai Huali Microelectronics Corp. Дата публикации: 2020-01-02.

Method for Forming a Semiconductor Device and a Semiconductor Device

Номер патента: US20170229539A1. Автор: Hans-Joachim Schulze,Philipp Seng. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2017-08-10.

Method for manufacturing semiconductor device and semiconductor device

Номер патента: US20150340475A1. Автор: Chih-Lin Wang,Long-Jie HONG,Chien-Chih Lin,Chia-Der Chang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2015-11-26.

Semiconductor device structure with inner spacer layer and method for forming the same

Номер патента: US20230215936A1. Автор: Pinyen Lin,Fang-Wei Lee,Li-Te Lin,Han-Yu Lin,Chansyun David Yang,Tze-Chung Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-07-06.

Method for manufacturing semiconductor device, and semiconductor device

Номер патента: US20080284013A1. Автор: Shigehisa Tajimi. Владелец: Seiko Epson Corp. Дата публикации: 2008-11-20.

Method for forming a silicide layer of semiconductor device

Номер патента: US20030119309A1. Автор: Jeong Lee,Chang Ryoo,Yong Sohn. Владелец: Hynix Semiconductor Inc. Дата публикации: 2003-06-26.

Crystalline semiconductor film, method of manufacturing the same, and semiconductor device

Номер патента: US20040192014A1. Автор: Misako Nakazawa,Naoki Makita,Toshiji Hamatani. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2004-09-30.

Methods for providing gate conductors on semiconductors and semiconductors formed thereby

Номер патента: US20060202239A1. Автор: Steven Holmes,Toshiharu Furukawa,Mark Hakey,David Horak,Charles Koburger. Владелец: International Business Machines Corp. Дата публикации: 2006-09-14.

Tungsten plug structure of semiconductor device and method for forming the same

Номер патента: US20070102824A1. Автор: In Chun. Владелец: DongbuAnam Semiconductor Inc. Дата публикации: 2007-05-10.

Semiconductor device manufacturing method and semiconductor device manufacturing by the same method

Номер патента: US20010018254A1. Автор: Ichiro Yamamoto. Владелец: NEC Corp. Дата публикации: 2001-08-30.

Via for semiconductor device connection

Номер патента: US20240250020A1. Автор: Chen-Hua Yu,Wen-Chih Chiou,Der-Chyang Yeh,Tsang-Jiuh Wu,An-Jhih Su,Chi-Hsi Wu,Ming Shih Yeh. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-25.

Method for forming semiconductor device structure with conductive line

Номер патента: US20200118932A1. Автор: Yun Chang,Chi-Cherng Jeng,Shyh-Wei Cheng,Chen-Chieh Chiang,Jung-Chi Jeng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-04-16.

Semiconductor device, semiconductor structure and method for fabricating semiconductor device and semiconductor structure using tilted etch process

Номер патента: US12094718B2. Автор: Huan-Yung Yeh. Владелец: Nanya Technology Corp. Дата публикации: 2024-09-17.

Semiconductor device having a device isolation trench

Номер патента: US20070264789A1. Автор: Song Hyeuk Im. Владелец: Hynix Semiconductor Inc. Дата публикации: 2007-11-15.

Methods for forming on-chip capacitor structures in semiconductor devices

Номер патента: US12108603B2. Автор: LIANG Chen. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-10-01.

Method for forming a via profile of interconnect structure of semiconductor device structure

Номер патента: US09997401B2. Автор: Che-Cheng Chang,Wei-Ting Chen,Wei-Yin Shiao,Tai-Shin Cheng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-06-12.

Method for forming a semiconductor device and a semiconductor device

Номер патента: US09911808B2. Автор: Hans-Joachim Schulze,Philipp Seng. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2018-03-06.

Method for manufacturing semiconductor device and semiconductor device

Номер патента: US09842869B2. Автор: Masatoshi Kimura. Владелец: Renesas Electronics Corp. Дата публикации: 2017-12-12.

Semiconductor device structure and method for forming the same

Номер патента: US09818834B2. Автор: Hung-Wen Su,Ming-Hsing Tsai,Sheng-Hsuan Lin,Ya-Lien Lee,Hung-Chang Hsu,Rueijer Lin,Hsiao-Ping Liu,Yen-Shou Kao. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-11-14.

Method for producing semiconductor device and semiconductor device

Номер патента: US09768294B2. Автор: Fujio Masuoka,Hiroki Nakamura. Владелец: Unisantis Electronics Singapore Pte Ltd. Дата публикации: 2017-09-19.

Method for manufacturing semiconductor device and semiconductor device

Номер патента: US09748244B2. Автор: Fujio Masuoka,Hiroki Nakamura. Владелец: Unisantis Electronics Singapore Pte Ltd. Дата публикации: 2017-08-29.

Fin shape contacts and methods for forming fin shape contacts

Номер патента: US09728615B2. Автор: Hui Zang. Владелец: Globalfoundries Inc. Дата публикации: 2017-08-08.

Manufacturing method of semiconductor device, and semiconductor device

Номер патента: US09673073B2. Автор: Takayuki Nosaka. Владелец: Renesas Electronics Corp. Дата публикации: 2017-06-06.

Method for producing semiconductor device and semiconductor device

Номер патента: US09666718B2. Автор: Fujio Masuoka,Hiroki Nakamura. Владелец: Unisantis Electronics Singapore Pte Ltd. Дата публикации: 2017-05-30.

Method for forming multi-layer metal line of semiconductor device

Номер патента: US20030129825A1. Автор: Jun Yoon. Владелец: Individual. Дата публикации: 2003-07-10.

Device and method for forming sharp extension region with controllable junction depth and lateral overlap

Номер патента: US20130264614A1. Автор: Effendi Leobandung,Isaac Lauer,Ghavam G. Shahidi. Владелец: International Business Machines Corp. Дата публикации: 2013-10-10.

Anti-fuse array of semiconductor device and method for forming the same

Номер патента: US9000560B2. Автор: Min Chul SUNG. Владелец: SK hynix Inc. Дата публикации: 2015-04-07.

Semiconductor device having a p-mos transistor with source-drain extension counter-doping

Номер патента: WO2007032897A3. Автор: Sinan Goktepeli,James D Burnett. Владелец: James D Burnett. Дата публикации: 2009-04-16.

Semiconductor device having a p-mos transistor with source-drain extension counter-doping

Номер патента: WO2007032897A2. Автор: Sinan Goktepeli,James D. Burnett. Владелец: FREESCALE SEMICONDUCTOR. Дата публикации: 2007-03-22.

Method for forming thin films of semiconductor devices

Номер патента: US20030124760A1. Автор: Seok Lee,Sung Joo. Владелец: Hynix Semiconductor Inc. Дата публикации: 2003-07-03.

Method for forming semiconductor device structure with etch stop layer

Номер патента: US20180166285A1. Автор: Wen-Cheng Yang,Keng-Chu Lin,Chih-Tsung Lee,Victor Y. Lu,Shing-Chyang Pan,Ya-Ling Lee. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-06-14.

Method for forming a semiconductor device having a notched control electrode and structure thereof

Номер патента: EP1728274A4. Автор: Marius K Orlowski,James D Burnett. Владелец: FREESCALE SEMICONDUCTOR INC. Дата публикации: 2008-11-05.

Method for forming a semiconductor device having a notched control electrode and structure thereof

Номер патента: WO2005104225A2. Автор: Marius K. Orlowski,James D. Burnett. Владелец: Freescale Semiconductor, Inc.. Дата публикации: 2005-11-03.

Method for forming a semiconductor device having nanocrystal

Номер патента: US20120264277A1. Автор: Sung-taeg Kang,Jane A. Yater. Владелец: Individual. Дата публикации: 2012-10-18.

Method for forming semiconductor device structure

Номер патента: US20190067012A1. Автор: Yen-Ting Chen,Chun-Hsiung Lin,Sai-Hooi Yeong,Kai-Hsuan LEE,Chun-An Lin,Cheng-Yu Yang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2019-02-28.

Device and method for forming sharp extension region with controllable junction depth and lateral overlap

Номер патента: US20130264612A1. Автор: Effendi Leobandung,Isaac Lauer,Ghavam G. Shahidi. Владелец: International Business Machines Corp. Дата публикации: 2013-10-10.

Semiconductor Device Structure and Method for Forming the Same

Номер патента: US20210013338A1. Автор: Po-Chi WU,Chai-Wei Chang,Yi-Cheng Chao,Jung-Jui Li,Ya-Lan CHANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-01-14.

Method for forming semiconductor device structure with graphene layer

Номер патента: US10818596B2. Автор: Tien-I Bao,Tai-I Yang,Wei-Chen CHU,Tien-Lu Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-10-27.

Anti-fuse array of semiconductor device and method for forming the same

Номер патента: US20150179526A1. Автор: Min Chul SUNG. Владелец: SK hynix Inc. Дата публикации: 2015-06-25.

Method for forming step channel of semiconductor device

Номер патента: US20060141800A1. Автор: Young Cho. Владелец: Hynix Semiconductor Inc. Дата публикации: 2006-06-29.

Method for forming step channel of semiconductor device

Номер патента: US7309656B2. Автор: Young Man Cho. Владелец: Hynix Semiconductor Inc. Дата публикации: 2007-12-18.

Methods for Forming a Plurality of Semiconductor Devices on a Plurality of Semiconductor Wafers

Номер патента: US20160359014A1. Автор: Jochen Hilsenbeck,Jens Peter Konrath. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2016-12-08.

Methods for Forming a Plurality of Semiconductor Devices on a Plurality of Semiconductor Wafers

Номер патента: US20180122918A1. Автор: Jochen Hilsenbeck,Jens Peter Konrath. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2018-05-03.

Method for forming a semiconductor device having a notched control electrode and structure thereof

Номер патента: EP1728274A2. Автор: Marius K. Orlowski,James D. Burnett. Владелец: FREESCALE SEMICONDUCTOR INC. Дата публикации: 2006-12-06.

Composition for forming organic film, substrate for manufacturing semiconductor device, method for forming organic film, and patterning process

Номер патента: US20190198341A1. Автор: Tsutomu Ogihara,Naoki Kobayashi,Kazumi Noda,Seiichiro Tachibana,Yusuke Biyajima,Daisuke Kori. Владелец: Shin Etsu Chemical Co Ltd. Дата публикации: 2019-06-27.

Composition for forming organic film, substrate for manufacturing semiconductor device, method for forming organic film, and patterning process

Номер патента: US11018015B2. Автор: Tsutomu Ogihara,Naoki Kobayashi,Kazumi Noda,Seiichiro Tachibana,Yusuke Biyajima,Daisuke Kori. Владелец: Shin Etsu Chemical Co Ltd. Дата публикации: 2021-05-25.

Semiconductor device and fabrication method thereof

Номер патента: US11309318B2. Автор: JISONG Jin. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2022-04-19.

Silicon phosphide semiconductor device

Номер патента: US11749567B2. Автор: Tuoh Bin Ng,Tzu-Ching Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-09-05.

Semiconductor device structures and printed circuit boards comprising semiconductor devices

Номер патента: US20130228922A1. Автор: Mark E. Tuttle. Владелец: Micron Technology Inc. Дата публикации: 2013-09-05.

Semiconductor device structure with glue layer and method for forming the same

Номер патента: US20230290638A1. Автор: Chia-Wei Chen,Kuo-Feng Yu,Jian-Hao Chen,Chih-Yu Hsu,Cheng-Hong Yang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-09-14.

Method for forming semiconductor device structure with metal silicide layer

Номер патента: US20200365696A1. Автор: Chih-Ming Lee,Gulbagh SINGH,Cheng-Yeh Huang,Chi-Yen Lin,Chin-Nan Chang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-11-19.

Method for forming semiconductor device structure with gate

Номер патента: US20160190013A1. Автор: Po-Chi WU,Chai-Wei Chang,Wen-Han Fang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-06-30.

Crystalline semiconductor film, method of manufacturing the same, and semiconductor device

Номер патента: US20090253251A1. Автор: Misako Nakazawa,Naoki Makita,Toshiji Hamatani. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2009-10-08.

Method for forming a metal plug of a semiconductor device

Номер патента: US20030013299A1. Автор: Jung Kim,Ki-Hong Yang. Владелец: Hynix Semiconductor Inc. Дата публикации: 2003-01-16.

Semiconductor device with air gaps between adjacent conductive lines

Номер патента: US20220165662A1. Автор: Chin-Ling Huang. Владелец: Nanya Technology Corp. Дата публикации: 2022-05-26.

Semiconductor device structure with conductive via structure and method for forming the same

Номер патента: US20240274525A1. Автор: Mu-Chi Chiang,Kuo-Chiang Tsai,Jeng-Ya Yeh. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-15.

Semiconductor device structure and method for forming the same

Номер патента: US12100765B2. Автор: Po-Chi WU,Chai-Wei Chang,Yi-Cheng Chao,Jung-Jui Li,Ya-Lan CHANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-24.

Semiconductor Device Structure and Method for Forming the Same

Номер патента: US20240372000A1. Автор: Po-Chi WU,Chai-Wei Chang,Yi-Cheng Chao,Jung-Jui Li,Ya-Lan CHANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-11-07.

Semiconductor device structure with gate spacer having protruding bottom portion and method for forming the same

Номер патента: US09997417B2. Автор: Yung-Tsun LIU. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-06-12.

Method for manufacturing a semiconductor device

Номер патента: US09935235B2. Автор: Tadashi Yamaguchi. Владелец: Renesas Electronics Corp. Дата публикации: 2018-04-03.

Structure and formation method of semiconductor device structure

Номер патента: US09935173B1. Автор: Chia-Ching Lee,Chun-Yuan Chou,Ching-Hwanq Su,Chung-Chiang WU,Hsueh-Wen Tsau. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-04-03.

Source down semiconductor devices and methods of formation thereof

Номер патента: US09911686B2. Автор: Michael Roesner,Martin Mischitz,Manfred Schneegans,Andreas Meiser,Michael Pinczolits. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2018-03-06.

Method for forming patterns for semiconductor device

Номер патента: US09875927B2. Автор: Home-Been Cheng,Tzu-Hao Fu,Tsung-Yin HSIEH,Ci-Dong Chu. Владелец: United Microelectronics Corp. Дата публикации: 2018-01-23.

Method for producing semiconductor device and semiconductor device

Номер патента: US09842926B2. Автор: Fujio Masuoka,Hiroki Nakamura. Владелец: Unisantis Electronics Singapore Pte Ltd. Дата публикации: 2017-12-12.

Method for forming semiconductor device structure

Номер патента: US09842768B2. Автор: Chih-Lin Wang,Kang-Min Kuo,Shu-Cheng Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-12-12.

Method for forming semiconductor device structure with gate

Номер патента: US09799565B2. Автор: Po-Chi WU,Chai-Wei Chang,Wen-Han Fang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-10-24.

Method for manufacturing semiconductor device, and semiconductor device

Номер патента: US09741641B2. Автор: Akito Shimizu,Sadayuki Moroi,Kenji Nishikawa,Tomoo Imura. Владелец: Renesas Electronics Corp. Дата публикации: 2017-08-22.

Semiconductor device manufacturing method and semiconductor device

Номер патента: US09716006B2. Автор: Kenji Hamada,Naruhisa Miura,Yosuke Nakanishi. Владелец: Mitsubishi Electric Corp. Дата публикации: 2017-07-25.

Semiconductor device structure and method for forming the same

Номер патента: US09660084B2. Автор: Po-Chi WU,Chai-Wei Chang,Yi-Cheng Chao,Jung-Jui Li,Ya-Lan CHANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-05-23.

Substrate and semiconductor device package and method for manufacturing the same

Номер патента: US20210327815A1. Автор: Shin-Luh Tarng,Ian HU. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2021-10-21.

A method for forming a semiconductor device

Номер патента: EP4391039A1. Автор: Shairfe Muhammad Salahuddin,Boon Teik CHAN,Hsiao-Hsuan Liu. Владелец: Interuniversitair Microelektronica Centrum vzw IMEC. Дата публикации: 2024-06-26.

Fin field effect transistor (finFET) device structure with ultra-thin body and method for forming the same

Номер патента: US10361085B2. Автор: Kuang-Hsin Chen,Yung-Chun Wu,Cheng-Chieh LAI,Mu-Shih YEH. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2019-07-23.

Semiconductor device with fuse and anti-fuse structures and method for forming the same

Номер патента: US20220157717A1. Автор: Chin-Ling Huang. Владелец: Nanya Technology Corp. Дата публикации: 2022-05-19.

Methods for passivating sidewalls of semiconductor wafers and semiconductor devices incorporating semiconductor wafers

Номер патента: EP4393038A1. Автор: Ville Vilokkinen,Riina Ulkuniemi,Petri Melanen. Владелец: Modulight Corp. Дата публикации: 2024-07-03.

Method for fabricating semiconductor substrate, semiconductor substrate, and semiconductor device

Номер патента: US9941361B2. Автор: Ryosuke Iijima,Takashi Shinohe,Johji Nishio,Kazuto Takao. Владелец: Toshiba Corp. Дата публикации: 2018-04-10.

Polysilicon fuse, manufacturing method thereof, and semiconductor device including polysilicon fuse

Номер патента: US20140339675A1. Автор: Hideaki KATAKURA. Владелец: Fuji Electric Co Ltd. Дата публикации: 2014-11-20.

Semiconductor device and semiconductor package

Номер патента: US11923328B2. Автор: Hsin He HUANG. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2024-03-05.

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Номер патента: US20130115743A1. Автор: Huilong Zhu,Haizhou Yin,Zhijiong Luo. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2013-05-09.

Method for producing a vertical semiconductor device with epitaxially grown iii-v epitaxy using the substrate several times, and corresponding semiconductor device, in particular based on gallium nitride

Номер патента: US20240234546A1. Автор: Christian Huber,Stefan Regensburger. Владелец: ROBERT BOSCH GMBH. Дата публикации: 2024-07-11.

Method for forming semiconductor device structure with etch stop layer

Номер патента: US20200144063A1. Автор: Wen-Cheng Yang,Keng-Chu Lin,Chih-Tsung Lee,Victor Y. Lu,Shing-Chyang Pan,Ya-Ling Lee. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-05-07.

Temporary fixation layered film and production method therefor, temporary fixation layered body, and semiconductor device production method

Номер патента: US20230207374A1. Автор: Yasuyuki Oyama,Takashi Kawamori,Tetsuya Enomoto,Emi Miyazawa,Yuta AKASU. Владелец: Resonac Corp. Дата публикации: 2023-06-29.

Semiconductor device and semiconductor package

Номер патента: US20240250053A1. Автор: Hsin He HUANG. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2024-07-25.

Method for assembling a carrier and a semiconductor device

Номер патента: US20010007288A1. Автор: Jeffrey Coffin,Peter Brofman,Kathleen Stalter,Anson Call. Владелец: Individual. Дата публикации: 2001-07-12.

Fin field effect transistor (finfet) device structure with ultra-thin body and method for forming the same

Номер патента: US20170213738A1. Автор: Kuang-Hsin Chen,Yung-Chun Wu,Cheng-Chieh LAI,Mu-Shih YEH. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-07-27.

Semiconductor product with low-leakage current and method for forming the same

Номер патента: US20220393017A1. Автор: Yi-Hsiung Lin,Chieh Chih Ting,Simon Yaou-Dong Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-12-08.

Method for forming a semiconductor device has a lengthened channel length

Номер патента: US20090124085A1. Автор: Hung-Ming Tsai,Ying Cheng CHUANG. Владелец: Nanya Technology Corp. Дата публикации: 2009-05-14.

Device detecting abnormality of secondary battery and semiconductor device

Номер патента: US20220045370A1. Автор: Kei Takahashi,Takanori Matsuzaki,Yuki Okamoto,Takahiko Ishizu,Minato ITO. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2022-02-10.

Microelectronic assembly with improved isolation voltage performance and a method for forming the same

Номер патента: EP2115771A2. Автор: Veronique C. Macary,Won Gi Min,Jiang-Kai Zuo. Владелец: FREESCALE SEMICONDUCTOR INC. Дата публикации: 2009-11-11.

Microelectronic assembly with improved isolation voltage performance and a method for forming the same

Номер патента: WO2008106284A2. Автор: Veronique C. Macary,Won Gi Min,Jiang-Kai Zuo. Владелец: Freescale Semiconductor Inc.. Дата публикации: 2008-09-04.

Semiconductor device and fabrication method thereof

Номер патента: US20210066124A1. Автор: Tiantian Zhang,Jingjing Tan,Zengsheng XU. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2021-03-04.

Methods for forming hole structure in semiconductor device

Номер патента: US20200243373A1. Автор: Gang Yang,Jian Dai,Biao Zheng,Xiang Hui ZHAO,Zui Xin ZENG,Lianjuan Ren. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2020-07-30.

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Номер патента: US12074254B2. Автор: Jun Tatebayashi,Yasufumi Fujiwara,Shuhei ICHIKAWA. Владелец: Osaka University NUC. Дата публикации: 2024-08-27.

Method for forming semiconductor device structure

Номер патента: US20160064486A1. Автор: Kuan-Yu Lin,Kai-Hsiang Chang,Ming-Shan Tsai,Shin-Yeh HUANG,Chih-Chen JIANG,Yi-Wei PENG,Ching-Lun Lai. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-03-03.

Method for forming isolation layer in semiconductor device

Номер патента: US20030119266A1. Автор: Cheol Park. Владелец: Dongbu Electronics Co Ltd. Дата публикации: 2003-06-26.

Method for forming semiconductor device structure with metal silicide layer

Номер патента: US20200044035A1. Автор: Chih-Ming Lee,Gulbagh SINGH,Cheng-Yeh Huang,Chi-Yen Lin,Chin-Nan Chang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-02-06.

Method for forming semiconductor device structure

Номер патента: US20170278756A1. Автор: Tzong-Sheng Chang,Chrong-Jung Lin,Ya-Chin King,Wei-Shuo HO,An-Lun LO. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-09-28.

Methods for forming a semiconductor device using tilted reactive ion beam

Номер патента: US20190295848A1. Автор: Anton Mauder,Hans-Joachim Schulze,Johannes Georg Laven,Werner Schustereder. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2019-09-26.

Method for forming word line of semiconductor device

Номер патента: US20040082155A1. Автор: Won Lee. Владелец: Individual. Дата публикации: 2004-04-29.

Method for manufacturing a semiconductor device, as well as a semiconductor substrate

Номер патента: US20060234468A1. Автор: Takeshi Saito. Владелец: Seiko Epson Corp. Дата публикации: 2006-10-19.

Semiconductor device structure with contact structure and method for forming the same

Номер патента: US20240313065A1. Автор: Chih-Hao Wang,Huan-Chieh Su,Chun-Yuan Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-19.

Radiation Detector and a Method for Forming a Semiconductor Device

Номер патента: US20180315882A1. Автор: Hans-Joachim Schulze,Johannes Hacker. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2018-11-01.

Semiconductor element, semiconductor device, and semiconductor element manufacturing method

Номер патента: US20130328065A1. Автор: Masahiko Niwayama,Masao Uchida. Владелец: Panasonic Corp. Дата публикации: 2013-12-12.

Method for forming a shielding layer on a semiconductor device

Номер патента: US20240332209A1. Автор: KyoWang Koo,JiSik MOON,Hyunseok Park. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2024-10-03.

Method for forming semiconductor device structure

Номер патента: US09991125B2. Автор: Chun-Chieh Lin,Huang-Yi Huang,Chen-Yuan Kao,Rueijer Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-06-05.

Dicing method for wafer-level packaging and semiconductor chip with dicing structure adapted for wafer-level packaging

Номер патента: US09917012B2. Автор: Bernhard Stering. Владелец: ams AG. Дата публикации: 2018-03-13.

Gate structures with various widths and method for forming the same

Номер патента: US09899265B2. Автор: Chia-Ming Chang,Tsung-Yu CHIANG,Wei-Shuo HO,Jyun-Ming Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-02-20.

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Номер патента: US09865460B2. Автор: Mao-Lin Huang,Chien-Hsun Wang,Chun-Hsiung Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-01-09.

Methods for forming a plurality of semiconductor devices on a plurality of semiconductor wafers

Номер патента: US09859396B2. Автор: Jochen Hilsenbeck,Jens Peter Konrath. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2018-01-02.

Method for forming semiconductor device structure

Номер патента: US09831130B2. Автор: Tzong-Sheng Chang,Chrong-Jung Lin,Ya-Chin King,Wei-Shuo HO,An-Lun LO. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-11-28.

Method for forming semiconductor device structure

Номер патента: US09786754B1. Автор: Chih-Ping Lin,Chung-Yeh Lee. Владелец: Vanguard International Semiconductor Corp. Дата публикации: 2017-10-10.

Semiconductor device and method for forming the same

Номер патента: US09786593B1. Автор: Po-Chun Lin. Владелец: Nanya Technology Corp. Дата публикации: 2017-10-10.

Method for cleaning via of interconnect structure of semiconductor device structure

Номер патента: US09761488B2. Автор: Che-Cheng Chang,Wei-Ting Chen,Wei-Yin Shiao,Tai-Shin Cheng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-09-12.

Method for forming a crystalline protective polysilicon layer

Номер патента: US20240222197A1. Автор: Tsung-Lin Lee,Kuan-Jung Chen,Wen-Chih Chiang,Cheng-Hung Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-04.

Methods for forming semiconductor devices using modified photomask layer

Номер патента: US20240222118A1. Автор: PENG Wang,Emilia Hirsch. Владелец: Tokyo Electron Ltd. Дата публикации: 2024-07-04.

Semiconductor device with supporting structures and method for forming the same

Номер патента: US20240047549A1. Автор: Chien-Chih Chou,Yi-huan Chen,Yu-Chang Jong,Jhu-Min Song. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-02-08.

Semiconductor device and method of forming the same

Номер патента: US20230154824A1. Автор: Chia-Che Chung,Ming-Tzong Yang,Hsien-Hsin Lin,Chee-Wee Liu,Wen-Kai Wan. Владелец: Individual. Дата публикации: 2023-05-18.

Semiconductor device, method for manufacturing the same, and semiconductor device mounting structure

Номер патента: US20080136017A1. Автор: Yoshifumi Nakamura,Michinari Tetani,Yukihiro Kozaka. Владелец: Matsushita Electric Industrial Co Ltd. Дата публикации: 2008-06-12.

Super-junction structure and method for manufacturing the same and semiconductor device thereof

Номер патента: US20180158900A1. Автор: He Sun,Zhongping Liao. Владелец: Hangzhou Silergy Semiconductor Technology LTD. Дата публикации: 2018-06-07.

Epitaxial process for forming semiconductor devices

Номер патента: US20130130461A1. Автор: Shiang-Bau Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2013-05-23.

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Номер патента: US20200194564A1. Автор: Chung-Yeh Lee,Sheng-Wei FU,Tsung-Yeh CHEN. Владелец: Vanguard International Semiconductor Corp. Дата публикации: 2020-06-18.

Forming method for floating contact hole, and semiconductor device

Номер патента: EP4401119A1. Автор: Song Zhang,Wenming Zhu,Qun Liu,Yaohui ZHOU,Dejin Wang. Владелец: CSMC Technologies Fab2 Co Ltd. Дата публикации: 2024-07-17.

Method for forming an ohmic contact on a wide-bandgap semiconductor device and wide-bandgap semiconductor device

Номер патента: WO2022214338A1. Автор: Lars Knoll,Stephan WIRTHS,Vinoth Sundaramoorthy. Владелец: Hitachi Energy Switzerland AG. Дата публикации: 2022-10-13.

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Номер патента: US20170084793A1. Автор: Tae Geun Kim,Kyung Heon KIM. Владелец: Intellectual Discovery Co Ltd. Дата публикации: 2017-03-23.

Methods for forming semiconductor devices using modified photomask layer

Номер патента: WO2024144886A1. Автор: PENG Wang,Emilia Hirsch. Владелец: Tokyo Electron U.S. Holdings, Inc.. Дата публикации: 2024-07-04.

Methods for forming passivation protection for an interconnection structure

Номер патента: WO2015134118A1. Автор: Mehul B. Naik,He REN,Yong Cao,Yana Cheng,Mei-Yee Shek,Sree Rangasai V. Kesapragada. Владелец: Applied Materials, Inc.. Дата публикации: 2015-09-11.

Method for producing semiconductor device

Номер патента: US20170077267A1. Автор: Fujio Masuoka,Hiroki Nakamura. Владелец: Unisantis Electronics Singapore PteLtd. Дата публикации: 2017-03-16.

Method for forming thermal oxide film on semiconductor substrate and method for producing semiconductor device

Номер патента: US20240274477A1. Автор: Tatsuo Abe,Tsuyoshi Ohtsuki. Владелец: Shin Etsu Handotai Co Ltd. Дата публикации: 2024-08-15.

Microwave integrated circuit package and method for forming such package

Номер патента: US8153449B2. Автор: Michael G. Adlerstein,Francois Y. Colomb. Владелец: Raytheon Co. Дата публикации: 2012-04-10.

Holder manufacturing method for loading substrate of semiconductor manufacturing device, batch type boat having holder, loading/unloading method of semiconductor substrate using the same, and semiconductor manufacturing device having the same

Номер патента: US20060239799A1. Автор: Byoung Lee,Taek Jang. Владелец: Individual. Дата публикации: 2006-10-26.

Microwave integrated circuit package and method for forming such package

Номер патента: US20110223692A1. Автор: Michael G. Adlerstein,Francois Y. Colomb. Владелец: Raytheon Co. Дата публикации: 2011-09-15.

Microwave integrated circuit package and method for forming such package

Номер патента: EP2156467A1. Автор: Michael G. Adlerstein,Francois Y. Colomb. Владелец: Raytheon Co. Дата публикации: 2010-02-24.

Forming method for floating contact hole, and semiconductor device

Номер патента: US20240290846A1. Автор: Song Zhang,Wenming Zhu,Qun Liu,Yaohui ZHOU,Dejin Wang. Владелец: CSMC Technologies Fab2 Co Ltd. Дата публикации: 2024-08-29.

Semiconductor Device and Method for Manufacturing Semiconductor Device

Номер патента: US20110260165A1. Автор: Hideto Ohnuma. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2011-10-27.

Encapsulating layer-covered semiconductor element, producing method thereof, and semiconductor device

Номер патента: US20140001656A1. Автор: Hiroyuki Katayama,Ryuichi Kimura,Hidenori Onishi,Kazuhiro Fuke,Yuki EBE. Владелец: Nitto Denko Corp. Дата публикации: 2014-01-02.

Method for forming an ohmic contact on a wide-bandgap semiconductor device and wide-bandgap semiconductor device

Номер патента: US20240222462A1. Автор: Lars Knoll,Stephan WIRTHS,Vinoth Sundaramoorthy. Владелец: Hitachi Energy Ltd. Дата публикации: 2024-07-04.

Method for processing workpiece, plasma processing apparatus and semiconductor device

Номер патента: US12009220B2. Автор: FEI Yu,Junliang Li,Mengyang Xin. Владелец: Beijing E Town Semiconductor Technology Co Ltd. Дата публикации: 2024-06-11.

Method for forming semiconductor device structure with metal-semiconductor compound layer

Номер патента: US20210384301A1. Автор: Chih-Ming Lee,Gulbagh SINGH,Cheng-Yeh Huang,Chi-Yen Lin,Chin-Nan Chang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-12-09.

Semiconductor device and a method for forming a semiconductor device

Номер патента: US20170250112A1. Автор: Stefan Barzen. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2017-08-31.

Manufacturing method for semiconductor device

Номер патента: US20010036685A1. Автор: Michiyoshi Takano. Владелец: Seiko Epson Corp. Дата публикации: 2001-11-01.

Methods for forming dielectric layer in forming semiconductor device

Номер патента: US12080560B2. Автор: Xiaohong Zhou,Yonggang YANG. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-09-03.

Method for manufacturing semiconductor device, and semiconductor device

Номер патента: US20120086121A1. Автор: Shigehisa Tajimi. Владелец: Seiko Epson Corp. Дата публикации: 2012-04-12.

Semiconductor device and method for forming the same

Номер патента: US20120007172A1. Автор: Seung Wan Kim. Владелец: Hynix Semiconductor Inc. Дата публикации: 2012-01-12.

Semiconductor device structure having dislocation stress memorization and methods of forming the same

Номер патента: US12107163B2. Автор: Tsai-Jung Ho,Tze-Liang Lee. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-01.

Method for fabricating a semiconductor device using wet etching and dry etching and semiconductor device

Номер патента: US20240318320A1. Автор: Michael Ehmann,Matteo Dainese,Sigrid Wabnig,Hiroshi Narahashi,Saurabh Roy,Johanna Schlaminger,Katharina Teichmann. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2024-09-26.

Method for processing workpiece, plasma processing apparatus and semiconductor device

Номер патента: US20240355634A1. Автор: FEI Yu,Junliang Li,Mengyang Xin. Владелец: Beijing E Town Semiconductor Technology Co Ltd. Дата публикации: 2024-10-24.

Semiconductor device and method for fabricating the same

Номер патента: US09941215B2. Автор: Ching-Wen Hung,Chih-Sen Huang,Jia-Rong Wu,Yi-Hui Lee,Ying-Cheng Liu. Владелец: United Microelectronics Corp. Дата публикации: 2018-04-10.

Methods for forming fin structures for semiconductor devices

Номер патента: US09934961B2. Автор: Yen-Ming Chen,Sheng-Chen Wang,Sai-Hooi Yeong,Tsung-Yao Wen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-04-03.

Super-junction structure and method for manufacturing the same and semiconductor device thereof

Номер патента: US09905636B2. Автор: He Sun,Zhongping Liao. Владелец: Hangzhou Silergy Semiconductor Technology LTD. Дата публикации: 2018-02-27.

Method for fabricating thermoelectric coolers and semiconductor devices formed therefrom

Номер патента: US20020119593A1. Автор: Joseph Freund,Mindaugas Dautartas,George Przybylek. Владелец: Lucent Technologies Inc. Дата публикации: 2002-08-29.

Method for manufacturing material for use in manufacturing electroluminescent organic semiconductor devices

Номер патента: EP2381503B1. Автор: Janos Veres. Владелец: Polyphotonix Ltd. Дата публикации: 2013-04-17.

Manufacturing method for semiconductor device, and semiconductor device

Номер патента: EP4203000A1. Автор: Jie Bai,Mengmeng Yang. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-06-28.

Semiconductor device and method of manufacturing the same and semiconductor manufacturing device

Номер патента: US20080316790A1. Автор: Fumihiko Inoue,Kentaro Sera. Владелец: SPANSION LLC. Дата публикации: 2008-12-25.

Methods for forming three-dimensional memory devices, and related structures

Номер патента: US20120199987A1. Автор: Nishant Sinha,Krishna K. Parat. Владелец: Micron Technology Inc. Дата публикации: 2012-08-09.

Semiconductor device and method for fabricating the same

Номер патента: US12089508B2. Автор: Hung-Chan Lin. Владелец: United Microelectronics Corp. Дата публикации: 2024-09-10.

Method for manufacturing semiconductor device, and semiconductor device

Номер патента: US09705286B2. Автор: Susumu Harada. Владелец: Nichia Corp. Дата публикации: 2017-07-11.

Method for manufacturing solid electrolytic capacitor, and solid electrolytic capacitor

Номер патента: US09865401B2. Автор: Kiyofumi Aoki,Koji Inazawa,Hiromasa Ageo,Junya Tatsuno. Владелец: AVX Corp. Дата публикации: 2018-01-09.

Method for manufacturing semiconductor device and semiconductor device

Номер патента: US09698569B2. Автор: Isao Watanabe,Satoshi Ae,Tetsuro Okuda,Shoutarou KITAMURA,Suguru Kato. Владелец: Renesas Electronics Corp. Дата публикации: 2017-07-04.

Method for forming laminated resin film and method for producing semiconductor device

Номер патента: US20110306185A1. Автор: Yukihiro Tsuji. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2011-12-15.

Measuring method and semiconductor structure forming method

Номер патента: US11747131B2. Автор: Che-Hui Lee,Pradip Girdhar Chaudhari. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-09-05.

Method for manufacturing semiconductor device and semiconductor device

Номер патента: US20100171110A1. Автор: Hiroshi Sato. Владелец: Tokyo Electron Ltd. Дата публикации: 2010-07-08.

Dynamically adjusting operation of a circuit within a semiconductor device

Номер патента: US20090072855A1. Автор: Sujeet Ayyapureddi,Raghukiran Sreeramaneni. Владелец: Micron Technology Inc. Дата публикации: 2009-03-19.

Apparatus and method for generting negative bias for isolated MOSFET gate-drive circuits

Номер патента: US5481219A. Автор: Vijayan J. Thottuvelil,Kenneth J. Timm,Mark E. Jacobs. Владелец: AT&T Corp. Дата публикации: 1996-01-02.

Inverter for forming high-speed power driving circuit of semiconductor device

Номер патента: KR100410813B1. Автор: 여정현. Владелец: 주식회사 하이닉스반도체. Дата публикации: 2004-03-30.

A method for analog-to-digital conversion, analog-to-digital converter, semiconductor device for detecting the distribution of physical quantities and electronic device

Номер патента: DE602005013469D1. Автор: Noriyuki Fukushima,Yoshikazu Nitta,Yoshinori Muramatsu,Yukihiro Yasui. Владелец: Sony Corp. Дата публикации: 2009-05-07.

Method for producing ceramic and apparatus for producing the same, semiconductor device, and piezoelectric device

Номер патента: KR100476495B1. Автор: 나토리에이지. Владелец: 세이코 엡슨 가부시키가이샤. Дата публикации: 2005-03-17.

Device and method for discharging an intermediate circuit capacitor and method for producing a device for discharging an intermediate circuit capacitor

Номер патента: DE102018115802A1. Автор: Rainer Edelhäuser,Thomas Götze. Владелец: Valeo Siemens eAutomotive Germany GmbH. Дата публикации: 2020-01-02.

Method for estimating the end of lifetime for a power semiconductor device

Номер патента: EP2724170A1. Автор: Bjørn Rannestad,Paul Bach Thogersen. Владелец: KK-ELECTRONIC AS. Дата публикации: 2014-04-30.

Systems and methods for stable and elevated idle-mode temperature for assembled semiconductor devices

Номер патента: EP4409378A1. Автор: Marc Beuchat,Phani Kumar Kandula,Nikos Kaburlasos,David N. Lombard,Eric J.M. Moret,John Kelbert,Brad Bittel,Mark J. LUCKEROTH,Rodrigo VIVI. Владелец: Intel Corp. Дата публикации: 2024-08-07.

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Номер патента: EP4389700A1. Автор: Takeshi Yoshimura,Makoto Kido,Hirokazu Sasaki,Takafumi Moriyama,Yuko Mitsuka,Mako Nakamura. Владелец: Shoei Chemical Inc . Дата публикации: 2024-06-26.

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Номер патента: US20120163089A1. Автор: Katsutoshi Saeki. Владелец: Lapis Semiconductor Co Ltd. Дата публикации: 2012-06-28.

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Номер патента: US20080218174A1. Автор: James Barnett,Carlos Cisneros,Charles Engle,Maria Evans. Владелец: Texas Instruments Inc. Дата публикации: 2008-09-11.

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Номер патента: US7177715B2. Автор: Masaaki Inaba,Takashi Iizumi,Juntaro Arima,Takeiki Aizono. Владелец: HITACHI LTD. Дата публикации: 2007-02-13.

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Номер патента: US20200291173A1. Автор: Minami Masaki,NISHITANI Yoshinori,SATO Tatsuki. Владелец: JXTG NIPPON OIL & ENERGY CORPORATION. Дата публикации: 2020-09-17.

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Номер патента: US20120163089A1. Автор: Katsutoshi Saeki. Владелец: Lapis Semiconductor Co Ltd. Дата публикации: 2012-06-28.

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Номер патента: US20130246993A1. Автор: Suzuki Keisuke. Владелец: FUJITSU LIMITED. Дата публикации: 2013-09-19.

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Номер патента: KR100776469B1. Автор: 엘드리지벤자민. Владелец: 폼팩터, 인크.. Дата публикации: 2007-11-16.

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Номер патента: KR100634280B1. Автор: 이정민,김성은,심창현,문병의. Владелец: (주)센스엔센서. Дата публикации: 2006-10-17.

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Номер патента: US20050153245A1. Автор: Yasunobu Onishi,Yasuhiko Sato. Владелец: Toshiba Corp. Дата публикации: 2005-07-14.

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Номер патента: KR100508531B1. Автор: 김성래. Владелец: 동부아남반도체 주식회사. Дата публикации: 2005-08-17.

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Номер патента: US20060092735A1. Автор: Chang-Ho Do,Jin-Seok Son. Владелец: Hynix Semiconductor Inc. Дата публикации: 2006-05-04.

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Номер патента: DE3702035A1. Автор: Reinhold Dr Schwalm,Horst Binder. Владелец: BASF SE. Дата публикации: 1988-08-04.

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Номер патента: US20200363978A1. Автор: Kazuhiko Kajigaya. Владелец: Micron Technology Inc. Дата публикации: 2020-11-19.

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Номер патента: US20200049765A1. Автор: HWANG Jong-Tae. Владелец: . Дата публикации: 2020-02-13.

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Номер патента: KR100682177B1. Автор: 김희범. Владелец: 주식회사 하이닉스반도체. Дата публикации: 2007-02-12.

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Номер патента: WO2003071590A1. Автор: Minoru Sugawara. Владелец: SONY CORPORATION. Дата публикации: 2003-08-28.

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Номер патента: US20140125366A1. Автор: Rannestad Bjørn,Thøgersen Paul Bach. Владелец: KK-ELECTRONIC A/S. Дата публикации: 2014-05-08.

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Номер патента: US20180106835A1. Автор: Tong Kay Chan,Ata Hisashi,Shwe Thiha. Владелец: . Дата публикации: 2018-04-19.

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Номер патента: US20200141974A1. Автор: Tong Kay Chan,Ata Hisashi,Shwe Thiha. Владелец: . Дата публикации: 2020-05-07.

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Номер патента: US20160275663A1. Автор: Yang Seunghune,YANG Kiho,CHI KAIYUAN. Владелец: . Дата публикации: 2016-09-22.

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Номер патента: US20070039470A1. Автор: Ha-Na Kim,Yo-han Ahn,Dong-Seok Ham,Chang-Min Cho,Kwang-Min Choi. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2007-02-22.

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Номер патента: US20210157966A1. Автор: Huilgol Ninad,Crowl Lawrence. Владелец: . Дата публикации: 2021-05-27.

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Номер патента: KR100588910B1. Автор: 박세진. Владелец: 동부일렉트로닉스 주식회사. Дата публикации: 2006-06-09.

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Номер патента: WO2006128922A1. Автор: Arnaud Furnémont. Владелец: Interuniversitair Microelektronica Centrum Vzw. Дата публикации: 2006-12-07.

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Номер патента: US20040032277A1. Автор: Kenneth Marr. Владелец: Individual. Дата публикации: 2004-02-19.

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Номер патента: US10604859B2. Автор: Takuya Miyakawa. Владелец: Seiko Epson Corp. Дата публикации: 2020-03-31.

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Номер патента: US20180087169A1. Автор: Takuya Miyakawa. Владелец: Seiko Epson Corp. Дата публикации: 2018-03-29.

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Номер патента: RU2686465C2. Автор: Эгилль СКУЛАСОН. Владелец: Хасколи Айлэндз. Дата публикации: 2019-04-26.

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Номер патента: US7598009B2. Автор: Kenichiro Sato,Naoya Sugimoto. Владелец: Fujifilm Corp. Дата публикации: 2009-10-06.

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Номер патента: US11908534B2. Автор: Hiroyuki Fujimoto,Masahiro Yanagida. Владелец: Fujitsu Ltd. Дата публикации: 2024-02-20.

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Номер патента: US20120003809A1. Автор: KIM Young Deuk. Владелец: HYNIX SEMICONDUCTOR INC.. Дата публикации: 2012-01-05.

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Номер патента: US20120003811A1. Автор: . Владелец: Sumitomo Electric Industries, Ltd.. Дата публикации: 2012-01-05.

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Номер патента: TW332338B. Автор: Rae Lee Jeong,Jae Kim Min. Владелец: Hyundai Eletronics Ind Co Ltd. Дата публикации: 1998-05-21.

Method for forming aluminum film for wiring and semiconductor device having aluminum wiring

Номер патента: JP3036499B2. Автор: 和己菅井. Владелец: NEC Corp. Дата публикации: 2000-04-24.

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Номер патента: US20140024186A1. Автор: Yoo Ji-Hyoung,Jung Jeesung,YANG HAIFENG,Yao Ze-Qiang. Владелец: Monolithic Power Systems, Inc.. Дата публикации: 2014-01-23.

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Номер патента: KR101186697B1. Автор: 정인호. Владелец: 한국산업기술대학교산학협력단. Дата публикации: 2012-09-27.

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Номер патента: US20140124740A1. Автор: Chow Ta-Hsin,Watanabe Motonori. Владелец: Academia Sinica. Дата публикации: 2014-05-08.

Metal thin film and method for manufacturing the same, dielectric capacitor and method for manufacturing the same, and semiconductor device

Номер патента: JP2010157748A. Автор: Kenichi Tsuchiya,Kenichi Kurokawa,健一土屋,Tatsuo Sawazaki,立雄沢崎,Teruo Tagawa,輝男田川,賢一黒川. Владелец: Seiko Epson Corp. Дата публикации: 2010-07-15.

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Номер патента: JP7215412B2. Автор: 忠広佐藤,浩二溝脇,武多久島. Владелец: Sumco Corp. Дата публикации: 2023-01-31.

Method for manufacturing dual-layer gate of a metal oxide semiconductor device

Номер патента: TW457569B. Автор: Hung-Huei Tzeng. Владелец: Vanguard Int Semiconduct Corp. Дата публикации: 2001-10-01.

Manufacturing method for increasing the current driving capability of high-power semiconductor device

Номер патента: TW452871B. Автор: Lin-Jung Huang,Ke-Yu Yu,Yun-Shiang Ge. Владелец: Advanced Power Electronics Cor. Дата публикации: 2001-09-01.

Detecting method for inner short-circuit on internumerical structures in encased semiconductor devices

Номер патента: CS334287A1. Автор: Jaroslav Rndr Homola,Jaroslav Rndr Zamastil,Ilja Prom Fyz Muller,Miroslav Rndr Skaloud. Владелец: Miroslav Rndr Skaloud. Дата публикации: 1989-02-10.

Porphyrin compound and method for producing the same, organic semiconductor film, and semiconductor device

Номер патента: JP4752269B2. Автор: 紀之川島,明錫崔. Владелец: Sony Corp. Дата публикации: 2011-08-17.

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Номер патента: RU2014100035A. Автор: Владимир Андреевич Степанец. Владелец: Владимир Андреевич Степанец. Дата публикации: 2015-07-20.

Manufacturing method for the plug under the capacitor and the structure thereof

Номер патента: TW434867B. Автор: Wen-Shiang Liau. Владелец: Vanguard Int Semiconduct Corp. Дата публикации: 2001-05-16.

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Номер патента: JP4483463B2. Автор: 明広伊藤,淳人早川. Владелец: ジャパンエポキシレジン株式会社. Дата публикации: 2010-06-16.

Method for forming a gate electrode of a nonvolatile semiconductor device

Номер патента: KR980012447A. Автор: 홍영기. Владелец: 김광호. Дата публикации: 1998-04-30.

A kind of method for forming n-type buried regions in the semiconductor device

Номер патента: CN104392912B. Автор: 胡强,张世勇,王思亮. Владелец: Dongfang Electric Corp. Дата публикации: 2017-11-10.

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Номер патента: KR970072014A. Автор: 권오철. Владелец: 김광호. Дата публикации: 1997-11-07.

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Номер патента: RU2011122084A. Автор: Владимир Андреевич Степанец. Владелец: Владимир Андреевич Степанец. Дата публикации: 2012-12-10.

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Номер патента: KR19990081135A. Автор: 이병근,엄홍국. Владелец: 윤종용. Дата публикации: 1999-11-15.

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Номер патента: US20130052451A1. Автор: Saito Shinji,Miyaji Shinya,Sano Takamichi. Владелец: . Дата публикации: 2013-02-28.

Collimator for forming of metal thin film in the semiconductor device

Номер патента: KR970000962B1. Автор: Kyung-Soo Cho. Владелец: Hyundai Electronics Ind. Дата публикации: 1997-01-21.

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Номер патента: US20130032894A1. Автор: Bernstein Kerry,Balch Bruce,Ellis-Monaghan John Joseph,Habib Nazmul. Владелец: INTERNATIONAL BUSINESS MACHINES CORPORATION. Дата публикации: 2013-02-07.

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Номер патента: US20120187976A1. Автор: Huang Ru,Fan Jiewen,Wang Runsheng,Wang Yangyuan,Zou Jibin,Liu Changze. Владелец: PEKING UNIVERSITY. Дата публикации: 2012-07-26.

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Номер патента: US20130109173A1. Автор: LIU HUANXIN. Владелец: Semiconductor Manufacturing International (Shanghai) Corporation. Дата публикации: 2013-05-02.

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Номер патента: US20130154055A1. Автор: PARK Sun Mi,Oh Sang Hyun,LEE Sang Bum. Владелец: SK HYNIX INC.. Дата публикации: 2013-06-20.

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Номер патента: JPH1089921A. Автор: Yoshikatsu Tomimatsu,喜克富松. Владелец: Mitsubishi Electric Corp. Дата публикации: 1998-04-10.

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Номер патента: CN103295894A. Автор: 秦伟,高慧慧,杨渝书. Владелец: Shanghai Huali Microelectronics Corp. Дата публикации: 2013-09-11.

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Номер патента: JP6969628B2. Автор: 勉堀,圭司和田,太郎西口. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2021-11-24.

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Номер патента: CN1886813A. Автор: 宫木阳辅,田中英树,桧圭宪,片井一夫,一木刚. Владелец: TDK Corp. Дата публикации: 2006-12-27.

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Номер патента: JP3639275B2. Автор: 隆宇田川. Владелец: Showa Denko KK. Дата публикации: 2005-04-20.

Evaluation method for evaluating positional relationship between PN junction surface of semiconductor device and bottom of trench

Номер патента: JP4815861B2. Автор: 規仁戸倉,建策山本,善彦尾関. Владелец: Denso Corp. Дата публикации: 2011-11-16.

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Номер патента: CN102455306A. Автор: 李明,段淑卿,齐瑞娟,杨卫明,芮志贤. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2012-05-16.

Method for measuring gate-to-body current of metal oxide semiconductor device

Номер патента: TW546484B. Автор: Ke-Wei Su,Jau-Kang He. Владелец: Taiwan Semiconductor Mfg. Дата публикации: 2003-08-11.

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Номер патента: CN103401408B. Автор: 李宁,王跃,张长松,王兆安. Владелец: Xian Jiaotong University. Дата публикации: 2015-05-27.

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Номер патента: JP4148497B2. Автор: 暉人太田,隆二門田,厚坂井. Владелец: Showa Denko KK. Дата публикации: 2008-09-10.

Method for producing aluminum foil for capacitor and solid electrolytic capacitor

Номер патента: AU2002230175A1. Автор: Atsushi Sakai,Ryuji Monden,Teruto Ohta. Владелец: Showa Denko KK. Дата публикации: 2002-08-19.

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Номер патента: US20120140379A1. Автор: SCHMIDT Oliver G.. Владелец: . Дата публикации: 2012-06-07.

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Method for forming capacitor and semiconductor device

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