Россия, г. Королев.

eburdiyg@gmail.com

8 (903) 781-84-63

  • Главная
  • SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND ELECTRONIC APPARATUS

SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND ELECTRONIC APPARATUS

Номер патента: US20130270707A1
Опубликовано: 17-10-2013
Автор(ы): Furuhata Makoto
Принадлежит: SEIKO EPSON CORPORATION
Получить PDF файл: Открыть в новом окне

Вам могут быть интересны следующие патенты

Рисунок 1. Взаимосвязь патентов (ближайшие 20).

Semiconductor devices, methods of manufacture thereof, and semiconductor device packages

Номер патента: US09773724B2. Автор: Szu Wei Lu,Jing-Cheng Lin,Po-Hao Tsai,Ying-Ching Shih,I-Ting Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-09-26.

Semiconductor device package and method of manufacture

Номер патента: US20220068862A1. Автор: Chen-Hua Yu,Jiun Yi Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-03-03.

Semiconductor device package and method of manufacturing the same

Номер патента: US20210249368A1. Автор: Meng-Wei Hsieh,Kuo-Chang KANG. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2021-08-12.

Stacked die modules for semiconductor device assemblies and methods of manufacturing stacked die modules

Номер патента: US20240258243A1. Автор: Jong Sik Paek. Владелец: Micron Technology Inc. Дата публикации: 2024-08-01.

Semiconductor device package and method of manufacturing the same

Номер патента: US20210035912A1. Автор: Hsing Kuo TIEN,Chih Cheng Lee. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2021-02-04.

Semiconductor device package and method of making the same

Номер патента: US09564393B1. Автор: Chi-Tsung Chiu,Kuo-Hua Chen,Chih-Yi Huang. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2017-02-07.

Semiconductor device, fabricating method thereof and semiconductor package including the semiconductor device

Номер патента: US09941196B2. Автор: Ho-geon Song,Se-young Jeong,Ho-Jin Lee,Dong-Hyeon Jang,Tae-Je Cho,Un-Byoung Kang,Min-Seung Yoon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-04-10.

Stacked die modules for semiconductor device assemblies and methods of manufacturing stacked die modules

Номер патента: WO2023287482A1. Автор: Jong Sik Paek. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2023-01-19.

Stacked die modules for semiconductor device assemblies and methods of manufacturing stacked die modules

Номер патента: EP4371156A1. Автор: Jong Sik Paek. Владелец: Micron Technology Inc. Дата публикации: 2024-05-22.

Semiconductor device package and method of manufacturing the same

Номер патента: US20210202412A1. Автор: Chih-Cheng LEE,Yu-Lin Shih. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2021-07-01.

Semiconductor device package and method of manufacturing the same

Номер патента: US20210217701A1. Автор: Hung-Jung Tu,Min Lung Huang,Chih-Wei Huang,Hsin Hsiang WANG,Shiuan-Yu LIN. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2021-07-15.

Semiconductor device package and method of manufacturing the same

Номер патента: US20200235056A1. Автор: Yu-Kai Lin,Hsuan-Yu Chen,Chia-Hao Sung. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2020-07-23.

Semiconductor device package and method of manufacturing the same

Номер патента: US11973039B2. Автор: Yu-Kai Lin,Hsuan-Yu Chen,Chia-Hao Sung. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2024-04-30.

Semiconductor device packages and methods of manufacturing the same

Номер патента: US20210134712A1. Автор: Yi Chun Wu,Shun-Tsat TU,Hong-Jyun LIN,Yi Tong CHIU. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2021-05-06.

Semiconductor device package and method of manufacturing the same

Номер патента: US20210166993A1. Автор: Bernd Karl Appelt,You-Lung Yen. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2021-06-03.

Semiconductor device and method of manufacturing the same semiconductor device

Номер патента: US09865502B2. Автор: Kenro Nakamura. Владелец: Toshiba Memory Corp. Дата публикации: 2018-01-09.

Semiconductor device, imaging unit, and electronic apparatus

Номер патента: US12112996B2. Автор: Takahiro Kamei,Yoichi Ootsuka. Владелец: Sony Semiconductor Solutions Corp. Дата публикации: 2024-10-08.

Methods for manufacturing semiconductor chips, methods for manufacturing semiconductor devices, semiconductor chips, semiconductor devices, connection substrates and electronic devices

Номер патента: US20010021582A1. Автор: Eiichi Sato,Tadashi Komiyama,Akitoshi Hara. Владелец: Seiko Epson Corp. Дата публикации: 2001-09-13.

Semiconductor device and method of manufacturing the same semiconductor device

Номер патента: US20160268163A1. Автор: Kenro Nakamura. Владелец: Toshiba Corp. Дата публикации: 2016-09-15.

Semiconductor device, circuit substrate, and electronic device

Номер патента: US09548272B2. Автор: Yoshihide Matsuo. Владелец: Seiko Epson Corp. Дата публикации: 2017-01-17.

Semiconductor device structure and methods of forming the same

Номер патента: US12068271B2. Автор: Hsin-Chi Chen,Hsun-Ying Huang,Chih-An Yang,Chih-Ming Lee,Chao-Ching Chang,Tsung-Wei Huang,Shang-Yen WU,Hung-Wei HO. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-20.

Semiconductor device structure and methods of forming the same

Номер патента: US20240371810A1. Автор: Hsin-Chi Chen,Hsun-Ying Huang,Chih-An Yang,Chih-Ming Lee,Chao-Ching Chang,Tsung-Wei Huang,Shang-Yen WU,Hung-Wei HO. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-11-07.

Semiconductor device, imaging unit, and electronic apparatus

Номер патента: US11488893B2. Автор: Takahiro Kamei,Yoichi Ootsuka. Владелец: Sony Semiconductor Solutions Corp. Дата публикации: 2022-11-01.

Semiconductor device, imaging unit, and electronic apparatus

Номер патента: US20210020546A1. Автор: Takahiro Kamei,Yoichi Ootsuka. Владелец: Sony Semiconductor Solutions Corp. Дата публикации: 2021-01-21.

Semiconductor device structure and methods of forming the same

Номер патента: US12033889B2. Автор: Shau-Lin Shue,Shao-Kuan Lee,Cheng-Chin Lee,Hsin-Yen Huang,Ting-Ya Lo,Chi-Lin Teng,Hsiaokang CHANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-09.

Semiconductor device structure and methods of forming the same

Номер патента: US20240312835A1. Автор: Shau-Lin Shue,Shao-Kuan Lee,Cheng-Chin Lee,Hsin-Yen Huang,Ting-Ya Lo,Chi-Lin Teng,Hsiaokang CHANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-19.

Method of forming conductive layer and semiconductor device

Номер патента: US20120189781A1. Автор: Takashi Sakaki. Владелец: Canon Inc. Дата публикации: 2012-07-26.

Method of forming conductive layer and semiconductor device

Номер патента: US8173542B2. Автор: Takashi Sakaki. Владелец: Canon Inc. Дата публикации: 2012-05-08.

Method of forming conductive layer and semiconductor device

Номер патента: US8273656B2. Автор: Takashi Sakaki. Владелец: Canon Inc. Дата публикации: 2012-09-25.

Method of forming wiring layer of semiconductor device

Номер патента: US20090227101A1. Автор: Sun-jung Lee,Mu-Kyeng Jung,Ki-Chul Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2009-09-10.

Semiconductor device structure and methods of forming the same

Номер патента: US20230378115A1. Автор: Hsin-Chi Chen,Hsun-Ying Huang,Chih-An Yang,Chih-Ming Lee,Chao-Ching Chang,Tsung-Wei Huang,Shang-Yen WU,Hung-Wei HO. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-23.

Semiconductor device structure and methods of forming the same

Номер патента: US20230010934A1. Автор: Tsung-Han Tsai,Gulbagh SINGH. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-01-12.

Semiconductor device structure and methods of forming the same

Номер патента: US11935895B2. Автор: Tsung-Han Tsai,Gulbagh SINGH. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-03-19.

Semiconductor device structure and methods of forming the same

Номер патента: US20240203998A1. Автор: Tsung-Han Tsai,Gulbagh SINGH. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-06-20.

Semiconductor device, semiconductor package, and electronic device

Номер патента: US20140225236A1. Автор: Yong-Hoon Kim,In-Ho Choi,Keung-Beum Kim. Владелец: Individual. Дата публикации: 2014-08-14.

Semiconductor device, semiconductor package, and electronic device

Номер патента: US09496226B2. Автор: Yong-Hoon Kim,In-Ho Choi,Keung-Beum Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-11-15.

Method of making a plurality of semiconductor devices

Номер патента: US09859184B2. Автор: Hans-Martin Ritter,Frank Burmeister. Владелец: Nexperia BV. Дата публикации: 2018-01-02.

Semiconductor device and method of manufacturing the same

Номер патента: US20020019129A1. Автор: Masahiro Shimizu. Владелец: Mitsubishi Electric Corp. Дата публикации: 2002-02-14.

Semiconductor device structure and methods of forming the same

Номер патента: US12046507B2. Автор: Chih-Hao Wang,Chia-Hao Chang,Kuan-Lun Cheng,Cheng-Chi Chuang,Li-Zhen YU,Lin-Yu HUANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-23.

Semiconductor device structure and methods of forming the same

Номер патента: US20240355671A1. Автор: Chih-Hao Wang,Chia-Hao Chang,Kuan-Lun Cheng,Cheng-Chi Chuang,Li-Zhen YU,Lin-Yu HUANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-24.

Semiconductor device structure and methods of forming the same

Номер патента: US20240250017A1. Автор: Chih-Hao Wang,Chia-Hao Chang,Kuan-Lun Cheng,Cheng-Chi Chuang,Li-Zhen YU,Lin-Yu HUANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-25.

Semiconductor device packages and method of making the same

Номер патента: US09653415B2. Автор: Sung-Mao Li,Wei-Hsuan Lee,Chien-Yeh Liu. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2017-05-16.

Semiconductor device structure and methods of forming the same

Номер патента: EP3945557A1. Автор: Chih-Hao Wang,Chia-Hao Chang,Kuan-Lun Cheng,Cheng-Chi Chuang,Li-Zhen YU,Lin-Yu HUANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-02-02.

Pattern structures in semiconductor devices and methods of forming pattern structures in semiconductor devices

Номер патента: US09558993B2. Автор: Jaehan Lee,Jaehwang SIM,Keonsoo Kim,Jaeho Min. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-01-31.

Methods of forming contacts for a semiconductor device structure, and related methods of forming a semiconductor device structure

Номер патента: US09564442B2. Автор: Wolfgang Mueller,Sanh D. Tang,Sourabh Dhir,Dylan R. MACMASTER. Владелец: Micron Technology Inc. Дата публикации: 2017-02-07.

Semiconductor device structure and methods of forming the same

Номер патента: US12080751B2. Автор: Ling-Sung Wang,Kun-Ei Chen,Chen-Chieh Chiang,Jun-Nan Nian,Hsueh-Han Lu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-03.

Semiconductor device structure and methods of forming the same

Номер патента: US20240371919A1. Автор: Ling-Sung Wang,Kun-Ei Chen,Chen-Chieh Chiang,Jun-Nan Nian,Hsueh-Han Lu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-11-07.

Method of manufacturing 3-D semiconductor device

Номер патента: US10636699B2. Автор: Zongliang Huo. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2020-04-28.

Method of making openings in a semiconductor device with reduced residue by transferring layers

Номер патента: US09431291B2. Автор: Keisuke Nakazawa. Владелец: Toshiba Corp. Дата публикации: 2016-08-30.

Semiconductor device structure and methods of forming the same

Номер патента: US20220359267A1. Автор: Chih-Hao Wang,Chia-Hao Chang,Kuan-Lun Cheng,Cheng-Chi Chuang,Li-Zhen YU,Lin-Yu HUANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-11-10.

Semiconductor device structure and methods of forming the same

Номер патента: US20230275027A1. Автор: Ming-Han Lee,Shau-Lin Shue,Shin-Yi Yang,Yu-Chen Chan,Shu-Wei LI. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-08-31.

Semiconductor device structure and methods of forming the same

Номер патента: US20230352340A1. Автор: Chih-Hao Wang,Chia-Hao Chang,Kuan-Lun Cheng,Cheng-Chi Chuang,Li-Zhen YU,Lin-Yu HUANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-02.

Semiconductor device structure and methods of forming the same

Номер патента: US20220028780A1. Автор: Chih-Hao Wang,Chia-Hao Chang,Kuan-Lun Cheng,Cheng-Chi Chuang,Li-Zhen YU,Lin-Yu HUANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-01-27.

Semiconductor device structure and methods of forming the same

Номер патента: EP3944293A1. Автор: Chih-Hao Wang,Chia-Hao Chang,Kuan-Lun Cheng,Cheng-Chi Chuang,Li-Zhen YU,Lin-Yu HUANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-01-26.

Semiconductor device structure and methods of forming the same

Номер патента: US11948879B2. Автор: Chih-Hao Wang,Chia-Hao Chang,Kuan-Lun Cheng,Cheng-Chi Chuang,Li-Zhen YU,Lin-Yu HUANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-04-02.

Wiring structure and method of forming the same, and semiconductor device including the wiring structure

Номер патента: US09716043B2. Автор: Jeong-Hoon Ahn,Sang-Chul Lee,In-Hwan Kim,Jun-Jung Kim,Joon-Nyung Lee,Yeon-Joo Kim,Jin-Hyeung PARK,Kyoung-Pil Park,Hyo-Seon LEE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-07-25.

Semiconductor device structure and methods of forming the same

Номер патента: US12074060B2. Автор: Shau-Lin Shue,Shao-Kuan Lee,Cheng-Chin Lee,Hsin-Yen Huang,Hsiaokang CHANG,Cherng-Shiaw Tsai,Kuang-Wei Yang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-27.

Semiconductor device structure and methods of forming the same

Номер патента: US20240371690A1. Автор: Shau-Lin Shue,Shao-Kuan Lee,Cheng-Chin Lee,Hsin-Yen Huang,Hsiaokang CHANG,Cherng-Shiaw Tsai,Kuang-Wei Yang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-11-07.

Semiconductor device and method of forming patterns for a semiconductor device

Номер патента: US20200144391A1. Автор: Dae Sung EOM. Владелец: SK hynix Inc. Дата публикации: 2020-05-07.

Semiconductor device structure and methods of forming the same

Номер патента: US12062612B2. Автор: Ming-Han Lee,Shin-Yi Yang,Shu-Wei LI,Guanyu Luo. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-13.

Semiconductor device structure and methods of forming the same

Номер патента: US12132000B2. Автор: Shau-Lin Shue,Shao-Kuan Lee,Cheng-Chin Lee,Hsin-Yen Huang,Hsiaokang CHANG,Cherng-Shiaw Tsai,Kuang-Wei Yang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-29.

Semiconductor device structure and methods of forming the same

Номер патента: US20240363534A1. Автор: Ming-Han Lee,Shin-Yi Yang,Shu-Wei LI,Guanyu Luo. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-31.

Semiconductor device structure and methods of forming the same

Номер патента: US20240379560A1. Автор: Shau-Lin Shue,Shao-Kuan Lee,Cheng-Chin Lee,Hsin-Yen Huang,Hsiaokang CHANG,Cherng-Shiaw Tsai,Kuang-Wei Yang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-11-14.

Semiconductor device structure and methods of forming the same

Номер патента: US20230335610A1. Автор: Yu-Lien Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-10-19.

Semiconductor device structure and methods of forming the same

Номер патента: US20240063126A1. Автор: Tsung-Han Tsai,Lin-Chen Lu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-02-22.

Butted contacts and methods of fabricating the same in semiconductor devices

Номер патента: US12002756B2. Автор: Chih-Hao Wang,Chia-Hao Chang,Jia-Chuan You,Yu-Ming Lin,Tien-Lu Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-06-04.

Semiconductor device structure and methods of forming the same

Номер патента: US20230411279A1. Автор: Chih-Hung Lu,Chih-Lin Wang,Song-Bor Lee,Liang-Hsuan PENG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-12-21.

Semiconductor device structure and methods of forming the same

Номер патента: US11715764B2. Автор: Chih-Hao Wang,Kuan-Lun Cheng,Cheng-Chi Chuang,Li-Zhen YU,Lin-Yu HUANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-08-01.

Semiconductor device structure and methods of forming the same

Номер патента: US20230369386A1. Автор: Ling-Sung Wang,Kun-Ei Chen,Chen-Chieh Chiang,Jun-Nan Nian,Hsueh-Han Lu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-16.

Semiconductor device structure and methods of forming the same

Номер патента: US20230335591A1. Автор: Chih-Hao Wang,Kuan-Lun Cheng,Cheng-Chi Chuang,Li-Zhen YU,Lin-Yu HUANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-10-19.

Semiconductor device structure and methods of forming the same

Номер патента: US20240120272A1. Автор: Chia-Wei Su,Chih Wei Lu,Yung-Hsu WU,Hsi-Wen Tien,Wei-Hao Liao,Cherng-Shiaw Tsai. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-04-11.

Semiconductor device structure and methods of forming the same

Номер патента: US20230369322A1. Автор: Chih-Hao Wang,Kuo-Cheng Chiang,Jia-Chuan You,Shi-Ning Ju. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-16.

Semiconductor device structure and methods of forming the same

Номер патента: US20230067027A1. Автор: Shau-Lin Shue,Shao-Kuan Lee,Cheng-Chin Lee,Hsin-Yen Huang,Hsiaokang CHANG,Cherng-Shiaw Tsai,Kuang-Wei Yang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-03-02.

Semiconductor device structure and methods of forming the same

Номер патента: US11923357B2. Автор: Hsiaokang CHANG,Cherng-Shiaw Tsai,Kuang-Wei Yang,Kai-Fang CHENG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-03-05.

Semiconductor device structure and methods of forming the same

Номер патента: US20230378168A1. Автор: Hsiaokang CHANG,Cherng-Shiaw Tsai,Kuang-Wei Yang,Kai-Fang CHENG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-23.

Wiring board, method of manufacturing the same, semiconductor device, circuit board, and electronic equipment

Номер патента: US20040075177A1. Автор: Terunao Hanaoka. Владелец: Seiko Epson Corp. Дата публикации: 2004-04-22.

Image sensor devices, methods of manufacture thereof, and semiconductor device manufacturing methods

Номер патента: US09748304B2. Автор: Szu-Ying Chen,Dun-Nian Yaung,Jen-Cheng Liu,Jeng-Shyan Lin,Shu-Ting Tsai,U-Ting CHEN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-08-29.

Silicon carbide semiconductor device, method of manufacturing silicon carbide semiconductor device and method of designing silicon carbide semiconductor device

Номер патента: US09640618B2. Автор: Shunichi Nakamura,Akihiko Sugai,Tetsuto INOUE. Владелец: Shindengen Electric Manufacturing Co Ltd. Дата публикации: 2017-05-02.

Method of forming openings in a semiconductor device and a semiconductor device fabricated by the method

Номер патента: US20100291770A1. Автор: Massud Abubaker Aminpur,Scott Warrick,Lionel Riviere-Cazeaux,Will Conley. Владелец: Individual. Дата публикации: 2010-11-18.

Methods of forming conductive elements of semiconductor devices and of forming memory cells

Номер патента: US09865812B2. Автор: Nishant Sinha,Scott E. Sills,Sanh D. Tang,Whitney L. West,Rob B. Goodwin. Владелец: Micron Technology Inc. Дата публикации: 2018-01-09.

Method of forming ferroelectric film, ferroelectric memory, method of manufacturing the same, semiconductor device, and method of manufacturing the same

Номер патента: US6787371B2. Автор: Tatsuo Sawasaki. Владелец: Seiko Epson Corp. Дата публикации: 2004-09-07.

Semiconductor device package and method of manufacturing the same

Номер патента: US20240213222A1. Автор: Chien-Hao Chen,Meng-Jen Wang,Chien-Yuan Tseng,Shang-Ruei Wu,Chen-Tsung Chang,Chih-Fang Wang,Cheng-Han Li,An-Chi Tsao,Per-Ju Chao. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2024-06-27.

Semiconductor device having a dummy portion, method for manufacturing the semiconductor device, method for manufacturing a semiconductor package having the semiconductor device

Номер патента: US09892968B2. Автор: Osamu Koike,Yutaka Kadogawa. Владелец: Lapis Semiconductor Co Ltd. Дата публикации: 2018-02-13.

Method of making a vertical gate semiconductor device

Номер патента: EP1535342A1. Автор: Gordon M. Grivna. Владелец: Semiconductor Components Industries LLC. Дата публикации: 2005-06-01.

Method of making a vertical gate semiconductor device

Номер патента: WO2004017414A1. Автор: Gordon M. Grivna. Владелец: Semiconductor Components Industries L.L.C.. Дата публикации: 2004-02-26.

Method of forming insulating film in semiconductor device

Номер патента: US20050014389A1. Автор: Sung Hwang. Владелец: Individual. Дата публикации: 2005-01-20.

Silicon carbide semiconductor device, method of manufacturing silicon carbide semiconductor device and method of designing silicon carbide semiconductor device.

Номер патента: US20160254356A1. Автор: Shunichi Nakamura,Akihiko Sugai,Tetsuto INOUE. Владелец: Shindengen Electric Manufacturing Co Ltd. Дата публикации: 2016-09-01.

Semiconductor device structure and methods of forming the same

Номер патента: US20240355904A1. Автор: Chih-Hao Wang,Kuo-Cheng Chiang,Shi Ning Ju,Guan-Lin Chen,Jung-Chien Cheng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-24.

Semiconductor device structure and methods of forming the same

Номер патента: US20240250153A1. Автор: Zhen-Cheng Wu,Kun-Yi Lin,Chi On Chui,Tai-Jung Kuo,Yunn-Shiuan LIU. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-25.

Method of forming fine pattern of semiconductor device

Номер патента: US09812335B2. Автор: Jaehong Park,Dongchan Kim,Jinyoung Park,Je-woo Han,Sungyeon KIM,Junho Yoon,KyungYub JEON,Kyohyeok KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-11-07.

Method of forming buried wiring in semiconductor device

Номер патента: US20050186795A1. Автор: Kazuhide Abe. Владелец: Individual. Дата публикации: 2005-08-25.

Method of manufacturing conductors for semiconductor device

Номер патента: US20230335545A1. Автор: Ru-Gun Liu,Chih-Ming Lai,Chih-Liang Chen,Ko-Bin Kao,Charles Chew-Yuen Young,Kam-Tou SIO,Shun Li CHEN,Hui-Ting Yang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-10-19.

Method of manufacturing conductors and semiconductor device which includes conductors

Номер патента: US20180151552A1. Автор: Ru-Gun Liu,Chih-Ming Lai,Chih-Liang Chen,Ko-Bin Kao,Charles Chew-Yuen Young,Kam-Tou SIO,Shun Li CHEN,Hui-Ting Yang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-05-31.

Method of manufacturing a power semiconductor device having source region and body contact region formed between trench-type gate electrodes

Номер патента: US11855184B2. Автор: Soo Chang Kang,Seong Jo HONG. Владелец: MagnaChip Semiconductor Ltd. Дата публикации: 2023-12-26.

Semiconductor device having metal gate and method for manufacturing semiconductor device having metal gate

Номер патента: US09490341B2. Автор: Chih-Wei Yang,Yu-Cheng Tung,En-Chiuan Liou. Владелец: United Microelectronics Corp. Дата публикации: 2016-11-08.

Via for Semiconductor Device Connection and Methods of Forming the Same

Номер патента: US20200243442A1. Автор: Chen-Hua Yu,Wen-Chih Chiou,Der-Chyang Yeh,Tsang-Jiuh Wu,An-Jhih Su,Chi-Hsi Wu,Ming Shih Yeh. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-07-30.

Semiconductor device, method and machine of manufacture

Номер патента: US11851749B2. Автор: Hung-Wen Su,Chih-Chien Chi,Ya-Lien Lee,Jen-Chun Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-12-26.

Semiconductor Device, Method and Machine of Manufacture

Номер патента: US20220290291A1. Автор: Hung-Wen Su,Chih-Chien Chi,Ya-Lien Lee,Jen-Chun Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-09-15.

Via for semiconductor device connection and methods of forming the same

Номер патента: US11961800B2. Автор: Chen-Hua Yu,Wen-Chih Chiou,Der-Chyang Yeh,Tsang-Jiuh Wu,An-Jhih Su,Chi-Hsi Wu,Ming Shih Yeh. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-04-16.

Semiconductor Device, Method and Machine of Manufacture

Номер патента: US20200102645A1. Автор: Hung-Wen Su,Chih-Chien Chi,Ya-Lien Lee,Jen-Chun Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-04-02.

Semiconductor Device, Method and Machine of Manufacture

Номер патента: US20240093357A1. Автор: Hung-Wen Su,Chih-Chien Chi,Ya-Lien Lee,Jen-Chun Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-03-21.

Semiconductor device package and method of manufacturing the same

Номер патента: US11887967B2. Автор: Chien-Hao Chen,Meng-Jen Wang,Chien-Yuan Tseng,Shang-Ruei Wu,Chen-Tsung Chang,Chih-Fang Wang,Cheng-Han Li,An-Chi Tsao,Per-Ju Chao. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2024-01-30.

Method of forming contacts to a semiconductor device

Номер патента: CA2011235A1. Автор: Kathleen A. Perry,San-Mei Ku. Владелец: International Business Machines Corp. Дата публикации: 1990-11-15.

Method of forming metal contact for semiconductor device

Номер патента: US11715763B2. Автор: Sung-Li Wang,Yasutoshi Okuno,Mrunal A. Khaderbad. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-08-01.

Method of forming bit line in semiconductor device

Номер патента: US20060240673A1. Автор: Sung Lee. Владелец: Hynix Semiconductor Inc. Дата публикации: 2006-10-26.

Semiconductor device structure and methods of forming the same

Номер патента: US20230317805A1. Автор: Mei-Yun Wang,Fu-Kai Yang,Chen-Ming Lee,Tzu-Yang Ho,Shih-Che Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-10-05.

Method of forming metal line in semiconductor device

Номер патента: US7790609B2. Автор: Ji-Ho Hong. Владелец: Dongbu HitekCo Ltd. Дата публикации: 2010-09-07.

Method and system of manufacturing conductors and semiconductor device which includes conductors

Номер патента: US20190371784A1. Автор: Ru-Gun Liu,Chih-Ming Lai,Chih-Liang Chen,Ko-Bin Kao,Charles Chew-Yuen Young,Kam-Tou SIO,Shun Li CHEN,Hui-Ting Yang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2019-12-05.

Method of forming fine pattern of semiconductor device using SiGe layer as sacrificial layer, and method of forming self-aligned contacts using the same

Номер патента: US20050282363A1. Автор: Chang-jin Kang,Kyeong-koo Chi,Cheol-kyu Lee,Keun-Hee Bai. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2005-12-22.

Semiconductor device structure and methods of forming the same

Номер патента: US20240038858A1. Автор: Cheng-Wei Chang,Shahaji B. More. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-02-01.

Method of forming metal lines of semiconductor device

Номер патента: US20120040527A1. Автор: Suk Joong Kim. Владелец: Hynix Semiconductor Inc. Дата публикации: 2012-02-16.

Method of forming metal lines of semiconductor device

Номер патента: US8193088B2. Автор: Suk Joong Kim. Владелец: Hynix Semiconductor Inc. Дата публикации: 2012-06-05.

Methods of forming metal wiring of semiconductor devices

Номер патента: US20040132283A1. Автор: Dong-Ki Jeon,Jae-Won Han. Владелец: Anam Semiconductor Inc. Дата публикации: 2004-07-08.

Method of Fabricating Landing Plug in Semiconductor Device

Номер патента: US20100330801A1. Автор: Kyoung Bong Rouh. Владелец: Hynix Semiconductor Inc. Дата публикации: 2010-12-30.

Method of forming thin film of semiconductor device

Номер патента: US9564286B2. Автор: Peter Schindler,Friedrich B. Prinz,Ki-Hyun Kim,Sam Hyung Sam KIM,Andrei Teodor IANCU,Michael C. Langston,Stephen P. WALCH,Takane Usui. Владелец: Leland Stanford Junior University. Дата публикации: 2017-02-07.

Method of bevel trimming three dimensional semiconductor device

Номер патента: US20120270394A1. Автор: Yi-Nan Chen,Hsien-Wen Liu,Shing-Yih Shih. Владелец: Nanya Technology Corp. Дата публикации: 2012-10-25.

Method of forming thin film of semiconductor device

Номер патента: US20160049291A1. Автор: Peter Schindler,Friedrich B. Prinz,Ki-Hyun Kim,Sam Hyung Sam KIM,Andrei Teodor IANCU,Michael C. Langston,Stephen P. WALCH,Takane Usui. Владелец: Leland Stanford Junior University. Дата публикации: 2016-02-18.

Semiconductor device structure and methods of forming the same

Номер патента: US20230369125A1. Автор: Chih-Hao Wang,Kuo-Cheng Chiang,Kuan-Lun Cheng,Ching-Wei Tsai,Shang-Wen Chang,Kuan-Ting Pan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-16.

Method of forming contacts for a semiconductor device

Номер патента: US20120094485A1. Автор: Shih-Chang Chen,Huan-Just Lin,Tsai-Chun Li,Yuan-Tien Tu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2012-04-19.

Semiconductor device structure and methods of forming the same

Номер патента: US20220310454A1. Автор: Chih-Hao Wang,Kuo-Cheng Chiang,Kuan-Lun Cheng,Ching-Wei Tsai,Shang-Wen Chang,Kuan-Ting Pan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-09-29.

Method of forming conductive layer of semiconductor device

Номер патента: US20240038545A1. Автор: Yu Shu Lin. Владелец: Nanya Technology Corp. Дата публикации: 2024-02-01.

Semiconductor device structure and methods of forming the same

Номер патента: US20230378325A1. Автор: Sheng-Hsuan Lin,I Lee,feng-yu Chang,Shu-Lan CHANG,Chun-Yen Liao. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-23.

Method of forming buried wiring in semiconductor device

Номер патента: US6903020B2. Автор: Kazuhide Abe. Владелец: Oki Electric Industry Co Ltd. Дата публикации: 2005-06-07.

Semiconductor device structure and methods of forming the same

Номер патента: US20240021472A1. Автор: Chieh-Han Wu,Cheng-Hsiung Tsai,Chung-Ju Lee,Hsin-Chieh Yao,Hwei-Jay CHU. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-01-18.

Semiconductor device chip and method of manufacturing semiconductor device chip

Номер патента: US20180197823A1. Автор: Katsuhiko Suzuki. Владелец: Disco Corp. Дата публикации: 2018-07-12.

Methods of forming a semiconductor device including active patterns on a bonding layer and semiconductor devices formed by the same

Номер патента: US12112952B2. Автор: Sungmin Kim,Daewon HA. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-10-08.

Methods of fabricating isolation regions of semiconductor devices and structures thereof

Номер патента: US09653543B2. Автор: Roland Hampp,Armin Tilke,Marcus Culmsee,Chris Stapelmann,Bee Kim Hong. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2017-05-16.

Semiconductor device comprising a transistor array and a termination region and method of manufacturing such a semiconductor device

Номер патента: US09825170B2. Автор: Till Schloesser,Franz Hirler,Andreas Meiser. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2017-11-21.

Semiconductor device, semiconductor device layout, and method of manufacturing semiconductor device

Номер патента: US09613953B2. Автор: Jhon Jhy Liaw. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-04-04.

Methods of forming a device having semiconductor devices on two sides of a buried dielectric layer

Номер патента: EP3504734A1. Автор: Sinan Goktepeli,Stephen Alan Fanelli. Владелец: Qualcomm Inc. Дата публикации: 2019-07-03.

Methods of forming a device having semiconductor devices on two sides of a buried dielectric layer

Номер патента: US09837302B1. Автор: Sinan Goktepeli,Stephen Alan Fanelli. Владелец: Qualcomm Inc. Дата публикации: 2017-12-05.

Method of forming isolation structure of semiconductor device for preventing excessive loss during recess gate formation

Номер патента: US20090029521A1. Автор: Dong Sun Sheen,Sang Tae Ahn,Seok Pyo Song,Hyeon Ju An. Владелец: Individual. Дата публикации: 2009-01-29.

Semiconductor-metal-on-insulator structures, methods of forming such structures, and semiconductor devices including such structures

Номер патента: US09608119B2. Автор: Ming Zhang,John K. Zahurak,Andrew M. Bayless,Sanh D. Tang. Владелец: Micron Technology Inc. Дата публикации: 2017-03-28.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20220302251A1. Автор: Masanobu IWAYA,Kensuke HATA. Владелец: Fuji Electric Co Ltd. Дата публикации: 2022-09-22.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20210074863A1. Автор: Takahito Kojima,Naoyuki Ohse. Владелец: Fuji Electric Co Ltd. Дата публикации: 2021-03-11.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20210111250A1. Автор: Setsuko Wakimoto. Владелец: Fuji Electric Co Ltd. Дата публикации: 2021-04-15.

Method of forming isolation film of semiconductor device

Номер патента: US20040127035A1. Автор: Sung Lee. Владелец: Hynix Semiconductor Inc. Дата публикации: 2004-07-01.

Compound semiconductor device, compound semiconductor substrate, and method for manufacturing compound semiconductor device

Номер патента: EP3876267A1. Автор: Keisuke Kawamura,Shigeomi Hishiki. Владелец: AIR WATER INC. Дата публикации: 2021-09-08.

Semiconductor device structure and method of manufacture

Номер патента: US20190165111A1. Автор: Soenke Habenicht,Stefan Berglund,Seong-Woo BAE,Martin ROEVER. Владелец: Nexperia BV. Дата публикации: 2019-05-30.

Compound semiconductor device, compound semiconductor substrate, and method for manufacturing compound semiconductor device

Номер патента: US12087852B2. Автор: Keisuke Kawamura,Shigeomi Hishiki. Владелец: AIR WATER INC. Дата публикации: 2024-09-10.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US11942517B2. Автор: Takeyoshi Masuda. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2024-03-26.

Semiconductor device and a method of manufacture of a semiconductor device

Номер патента: US20220045222A1. Автор: VASANTHA KUMAR Vaddagere Nagaraju,Hans-Martin Ritter,Steffen Holland,Joachim Utzig,Guido Notermans. Владелец: Nexperia BV. Дата публикации: 2022-02-10.

A semiconductor device and a method of manufacture of a semiconductor device

Номер патента: EP3951884A1. Автор: VASANTHA KUMAR Vaddagere Nagaraju,Hans-Martin Ritter,Steffen Holland,Joachim Utzig,Guido Notermans. Владелец: Nexperia BV. Дата публикации: 2022-02-09.

Semiconductor device and a method of manufacture of a semiconductor device

Номер патента: US11984515B2. Автор: VASANTHA KUMAR Vaddagere Nagaraju,Hans-Martin Ritter,Steffen Holland,Joachim Utzig,Guido Notermans. Владелец: Nexperia BV. Дата публикации: 2024-05-14.

Process of manufacturing trench gate semiconductor device

Номер патента: EP2020681A3. Автор: Richard K. Williams,Wayne B. Grabowski. Владелец: Advanced Analogic Technologies Inc. Дата публикации: 2009-06-10.

Methods of forming a semiconductor device including active patterns on a bonding layer and semiconductor devices formed by the same

Номер патента: US20200388502A1. Автор: Sungmin Kim,Daewon HA. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-12-10.

Methods of forming a semiconductor device including active patterns on a bonding layer and semiconductor devices formed by the same

Номер патента: US20220181161A1. Автор: Sungmin Kim,Daewon HA. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-06-09.

Method of manufacturing interconnection and semiconductor device

Номер патента: US8940628B2. Автор: Tadashi Sakai,Yuichi Yamazaki. Владелец: Toshiba Corp. Дата публикации: 2015-01-27.

Method of multiple patterning to form semiconductor devices

Номер патента: US20140024191A1. Автор: Kangguo Cheng,Bruce B. Doris,Kuang-Jung Chen,Sen Liu,Steven J. Holmes. Владелец: International Business Machines Corp. Дата публикации: 2014-01-23.

Method of forming isolation layer for semiconductor device

Номер патента: US5913133A. Автор: Byung Seok Lee. Владелец: Hyundai Electronics Industries Co Ltd. Дата публикации: 1999-06-15.

Methods of forming a device having semiconductor devices on two sides of a buried dielectric layer

Номер патента: WO2018038865A1. Автор: Sinan Goktepeli,Stephen Alan Fanelli. Владелец: QUALCOMM INCORPORATED. Дата публикации: 2018-03-01.

Compound semiconductor device, compound semiconductor substrate, and method for manufacturing compound semiconductor device

Номер патента: US20220005945A1. Автор: Keisuke Kawamura,Shigeomi Hishiki. Владелец: AIR WATER INC. Дата публикации: 2022-01-06.

Semiconductor device structure and methods of forming the same

Номер патента: US20230369452A1. Автор: Ting-Gang CHEN,Tai-Chun Huang,Chieh-Ping WANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-16.

Method of forming isolation film of semiconductor device

Номер патента: US7060630B2. Автор: Sung Hoon Lee. Владелец: Hynix Semiconductor Inc. Дата публикации: 2006-06-13.

Method for manufacturing semiconductor device, epitaxial substrate for use therein and semi-finished semiconductor device

Номер патента: US20130313686A1. Автор: Ray-Hua Horng,Ming-Chun Tseng,Fan-Lei Wu. Владелец: National Chung Hsing University. Дата публикации: 2013-11-28.

Methods of manufacturing thin film transistor, biometric device, and display apparatus

Номер патента: US11830763B2. Автор: Yonglian QI,Lianjie QU,Hebin ZHAO,Shan ZHANG. Владелец: Beijing BOE Display Technology Co Ltd. Дата публикации: 2023-11-28.

Method of forming isolation layer of semiconductor device

Номер патента: US7682928B2. Автор: Myung IL Kang. Владелец: Dongbu Electronics Co Ltd. Дата публикации: 2010-03-23.

Semiconductor device package and methods of manufacture thereof

Номер патента: US09786515B1. Автор: Weng Foong Yap. Владелец: NXP USA Inc. Дата публикации: 2017-10-10.

Semiconductor device package and method of manufacturing the same

Номер патента: US20230154905A1. Автор: Wei-Hao Chang. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2023-05-18.

Board for mounting BGA semiconductor chip thereon, semiconductor device, and methods of fabricating such board and semiconductor device

Номер патента: US20050156326A1. Автор: Toshihide Ito. Владелец: NEC Toppan Circuit Solutions Inc. Дата публикации: 2005-07-21.

Semiconductor device package and method of manufacturing the same

Номер патента: US20210249367A1. Автор: Meng-Wei Hsieh. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2021-08-12.

Semiconductor device package and method of manufacturing the same

Номер патента: US20240249988A1. Автор: Yu-Chang Chen,Jen-Chieh Kao,Wei-Tung CHANG. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2024-07-25.

Semiconductor device package and method of manufacturing the same

Номер патента: US20210343649A1. Автор: Chao Wei LIU. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2021-11-04.

Semiconductor device package and method of manufacturing the same

Номер патента: US20230114278A1. Автор: Chao Wei LIU. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2023-04-13.

Semiconductor device, method for installing heat dissipation member to semiconductor device, and a method for producing semiconductor device

Номер патента: US09711430B2. Автор: Tatsuo Nishizawa,Yuhei Nishida. Владелец: Fuji Electric Co Ltd. Дата публикации: 2017-07-18.

Semiconductor device package and method of manufacturing the same

Номер патента: US20200058579A1. Автор: Wen-Long Lu. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2020-02-20.

Semiconductor device package and method of manufacturing the same

Номер патента: US20200381348A1. Автор: Teck-Chong Lee,Yung-Shun CHANG. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2020-12-03.

Semiconductor device package and method of manufacturing the same

Номер патента: US20190363064A1. Автор: Wen-Long Lu. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2019-11-28.

Semiconductor device package and method of manufacturing the same

Номер патента: US20210210446A1. Автор: Cheng-Lin HO,Chih-Cheng LEE. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2021-07-08.

Semiconductor device package and method of manufacturing the same

Номер патента: US20210265280A1. Автор: HUNG-YI LIN,Mark Gerber,Meng-Wei Hsieh,Hsu-Chiang Shih,Yu Sheng Chang,Hsiu-Chi LIU. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2021-08-26.

Semiconductor device package and method of fabricating the same

Номер патента: US20220148948A1. Автор: Younghwan Park,Sunkyu Hwang,Jongseob Kim,Jaejoon Oh,Soogine Chong. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-05-12.

Semiconductor device package and method of manufacturing the same

Номер патента: US20200227394A1. Автор: Ying-Chih Kuo,Wei-Feng Lin,Chien Chan YEH. Владелец: Omnivision Technologies Inc. Дата публикации: 2020-07-16.

Semiconductor device, manufacturing method of semiconductor device, integrated substrate, and electronic device

Номер патента: US20210233874A1. Автор: Yuichi Yamamoto. Владелец: Sony Group Corp. Дата публикации: 2021-07-29.

Semiconductor device, manufacturing method of semiconductor device, integrated substrate, and electronic device

Номер патента: US20190109099A1. Автор: Yuichi Yamamoto. Владелец: Sony Corp. Дата публикации: 2019-04-11.

Semiconductor device, manufacturing method of semiconductor device, integrated substrate, and electronic device

Номер патента: US20200251428A1. Автор: Yuichi Yamamoto. Владелец: Sony Corp. Дата публикации: 2020-08-06.

Semiconductor device package and method of manufacturing the same

Номер патента: US20240203896A1. Автор: Cheng Kai Chang,Zheng Wei WU. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2024-06-20.

Semiconductor device packages and methods of manufacturing the same

Номер патента: US12046523B2. Автор: Wen-Long Lu. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2024-07-23.

Semiconductor device package and method of forming

Номер патента: US12034033B2. Автор: Arun Virupaksha Gowda. Владелец: GE AVIATION SYSTEMS LLC. Дата публикации: 2024-07-09.

Semiconductor device package and method of forming

Номер патента: US20230238423A1. Автор: Arun Virupaksha Gowda. Владелец: GE AVIATION SYSTEMS LLC. Дата публикации: 2023-07-27.

Semiconductor device package and method of manufacturing the same

Номер патента: US20200211942A1. Автор: Shun-Tsat TU. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2020-07-02.

Semiconductor device package and method of manufacturing the same

Номер патента: US20200251353A1. Автор: Wen-Long Lu. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2020-08-06.

Combined structure of flexible semiconductor device package and method of transporting the flexible semiconductor device

Номер патента: US20180261446A1. Автор: Maohua Du. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-09-13.

Semiconductor device package and method of manufacturing the same

Номер патента: US20200144168A1. Автор: Wen-Long Lu,Huang-Hsien CHANG. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2020-05-07.

Method of manufacturing substrates for semiconductor devices, corresponding substrate and semiconductor device

Номер патента: EP4125121A1. Автор: Mauro Mazzola. Владелец: STMICROELECTRONICS SRL. Дата публикации: 2023-02-01.

Semiconductor device package and method of manufacturing the same

Номер патента: US20210134752A1. Автор: Wen-Long Lu. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2021-05-06.

Semiconductor device package and method of manufacturing the same

Номер патента: US20210202406A1. Автор: Meng-Wei Hsieh. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2021-07-01.

Semiconductor device package and method of manufacturing the same

Номер патента: US20210210433A1. Автор: Chao Wei LIU. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2021-07-08.

Semiconductor device package and method of manufacturing the same

Номер патента: US20220310521A1. Автор: Chao Wei LIU. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2022-09-29.

Semiconductor device package and method of manufacturing the same

Номер патента: US20200335458A1. Автор: Chien-Hua Chen,Sheng-chi Hsieh. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2020-10-22.

Semiconductor device package and method of manufacturing the same

Номер патента: US20220336317A1. Автор: Chang-Lin Yeh. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2022-10-20.

Semiconductor device package and method of manufacturing the same

Номер патента: US20210159200A1. Автор: Chih Cheng Lee. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2021-05-27.

Semiconductor device package and method of manufacturing the same

Номер патента: US20210265273A1. Автор: Chang Chi Lee,Chiu-Wen Lee,Ian HU,Chien Lin CHANG CHIEN. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2021-08-26.

Semiconductor device package and method of manufacturing the same

Номер патента: US12027467B2. Автор: Shao-Lun YANG,Chun-Hung Yeh,Wei-Chih CHO,Tsung-Wei LU. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2024-07-02.

Method of manufacturing resin-encapsulated semiconductor device package using photoresist or pre-peg lead frame dam bars

Номер патента: US5258331A. Автор: Takashi Nakashima,Kenji Masumoto. Владелец: Texas Instruments Inc. Дата публикации: 1993-11-02.

Semiconductor device package and methods of manufacture

Номер патента: US20230378150A1. Автор: Chen-Hua Yu,Jiun Yi Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-23.

Semiconductor device, semiconductor device manufacturing method, and electronic device

Номер патента: US20190131258A1. Автор: Kiyohisa Sakai. Владелец: Sony Corp. Дата публикации: 2019-05-02.

Semiconductor device package and methods of manufacture

Номер патента: US11756945B2. Автор: Chen-Hua Yu,Jiun Yi Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-09-12.

Semiconductor device, electronic component, and electronic component production method

Номер патента: US20220352105A1. Автор: Yoshihisa Takada,Hiroyuki Shinkai,Isamu Nishimura,Hirofumi Takeda,Hideaki Yanagida. Владелец: ROHM CO LTD. Дата публикации: 2022-11-03.

Bump coplanarity for semiconductor device assembly and methods of manufacturing the same

Номер патента: US20230402418A1. Автор: Tsung Che Tsai,Ko Han Lin. Владелец: Micron Technology Inc. Дата публикации: 2023-12-14.

Semiconductor device package and method of manufacturing the same

Номер патента: US20210125945A1. Автор: Ting Ruei CHEN,Guo-Cheng Liao. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2021-04-29.

Semiconductor device package and method of manufacturing the same

Номер патента: US20210249369A1. Автор: Chieh-Chen Fu,Meng-Wei Hsieh. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2021-08-12.

Semiconductor device package and method of manufacturing the same

Номер патента: US20180261573A1. Автор: Kuang-Hsiung Chen,Tien-Szu Chen,Sheng-Ming Wang,I-Cheng Wang,Wun-Jheng SYU. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2018-09-13.

Semiconductor device package and method of manufacturing the same

Номер патента: US20190088626A1. Автор: Kuang-Hsiung Chen,Tien-Szu Chen,Sheng-Ming Wang,I-Cheng Wang,Wun-Jheng SYU. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2019-03-21.

Semiconductor device package and method of manufacturing the same

Номер патента: US20200350223A1. Автор: Chih Cheng Lee,Yu-Lin Shih. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2020-11-05.

Semiconductor device package and method of manufacturing the same

Номер патента: US20210280744A1. Автор: Cheng-Yuan KUNG,Meng-Wei Hsieh,Tang-Yuan CHEN. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2021-09-09.

Semiconductor device package and method of manufacturing the same

Номер патента: US12021044B2. Автор: Wen Hung HUANG. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2024-06-25.

Semiconductor device package and method of manufacturing the same

Номер патента: US11658102B2. Автор: Chun Chen CHEN,Yuanhao Yu,Cheng Yuan CHEN,Jiming Li,Chien-Wen TU. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2023-05-23.

Semiconductor device package and method of manufacturing the same

Номер патента: US20230402738A1. Автор: Yi Chuan Ding,Guo-Cheng Liao. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2023-12-14.

Semiconductor device package and methods of formation

Номер патента: US20240038682A1. Автор: Jun He,Chun-Jen Chen,Ming-Feng Wu,Li-Hsien HUANG,Tien-Chung Yang,Yung-Sheng Liu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-02-01.

Semiconductor device packages and methods of manufacturing the same

Номер патента: US20230411349A1. Автор: Chih-Pin Hung,Teck-Chong Lee,Shin-Luh Tarng,Tang-Yuan CHEN,Meng-Kai Shih. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2023-12-21.

Semiconductor device package and method of manufacturing the same

Номер патента: US20230298985A1. Автор: Chun Chen CHEN,Yuanhao Yu,Cheng Yuan CHEN,Jiming Li,Chien-Wen TU. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2023-09-21.

Semiconductor device package and method of fabricating the same

Номер патента: EP4002448A1. Автор: Younghwan Park,Sunkyu Hwang,Jongseob Kim,Jaejoon Oh,Soogine Chong. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-05-25.

Semiconductor device package and method of forming

Номер патента: CA3186156A1. Автор: Arun Virupaksha Gowda. Владелец: GE AVIATION SYSTEMS LLC. Дата публикации: 2023-07-25.

Semiconductor device package and method of forming

Номер патента: EP4216265A3. Автор: Arun Virupaksha Gowda. Владелец: GE AVIATION SYSTEMS LLC. Дата публикации: 2023-09-06.

Semiconductor device package and method of forming

Номер патента: EP4216265A2. Автор: Arun Virupaksha Gowda. Владелец: GE AVIATION SYSTEMS LLC. Дата публикации: 2023-07-26.

Semiconductor device package and methods of formation

Номер патента: US20240038649A1. Автор: Jun He,Li-Hsien HUANG,Yao-Chun Chuang,Tien-Chung Yang,Ting-Ting KUO,Yinlung Lu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-02-01.

Semiconductor Device Packages and Methods of Forming the Same

Номер патента: US20240038646A1. Автор: Tsung-Ding Wang,Yu-Min LIANG,Chi-Yang Yu,Jung Wei Cheng,Chin-Liang Chen,Hao-Cheng Hou. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-02-01.

Fabrication method of layer structure for mounting semiconductor device

Номер патента: US20180233442A1. Автор: Hung-Chi Chen,Fang-Lin Tsai,Yi-Feng Chang,Yi-Min Fu,Cheng-Jen Liu. Владелец: Siliconware Precision Industries Co Ltd. Дата публикации: 2018-08-16.

Method of manufacturing multi-die semiconductor devices and corresponding multi-die semiconductor device

Номер патента: US20240249955A1. Автор: Paolo Crema. Владелец: STMICROELECTRONICS SRL. Дата публикации: 2024-07-25.

Thin semiconductor device packages and methods of manufacture

Номер патента: US20160284628A1. Автор: Maria Cristina Estacio,Margie Rios,Aira Lourdes VILLAMOR,Armand Vincent Jereza. Владелец: Fairchild Semiconductor Corp. Дата публикации: 2016-09-29.

Method of manufacturing multi-die semiconductor devices

Номер патента: EP4016614A1. Автор: Paolo Crema. Владелец: STMICROELECTRONICS SRL. Дата публикации: 2022-06-22.

Semiconductor device package and method of manufacturing the same

Номер патента: US09589906B2. Автор: Daesung Lee,Chulhyun Park,Ingyu Han. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2017-03-07.

Semiconductor device package and method of manufacture

Номер патента: US20150228560A1. Автор: Stephen R. Hooper,Dwight L. Daniels,Alan J. Magnus,Justin E. Poarch. Владелец: FREESCALE SEMICONDUCTOR INC. Дата публикации: 2015-08-13.

Semiconductor device packages and methods of manufacturing the same

Номер патента: US09589814B2. Автор: Che-heung Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-03-07.

Semiconductor device package and method of manufacture

Номер патента: US09455216B2. Автор: Stephen R. Hooper,Dwight L. Daniels,Alan J. Magnus,Justin E. Poarch. Владелец: FREESCALE SEMICONDUCTOR INC. Дата публикации: 2016-09-27.

Semiconductor device package and method of manufacture

Номер патента: EP2680307A3. Автор: Stephen R. Hooper,Dwight L. Daniels,Alan J. Magnus,Justin E. Poarch. Владелец: FREESCALE SEMICONDUCTOR INC. Дата публикации: 2014-12-17.

Semiconductor device package and method of manufacture

Номер патента: US20140338956A1. Автор: Stephen R. Hooper,Dwight L. Daniels,Alan J. Magnus,Justin E. Poarch. Владелец: FREESCALE SEMICONDUCTOR INC. Дата публикации: 2014-11-20.

Method of manufacturing multi-die semiconductor devices and corresponding multi-die semiconductor device

Номер патента: US11948806B2. Автор: Paolo Crema. Владелец: STMICROELECTRONICS SRL. Дата публикации: 2024-04-02.

Resin-sealed semiconductor device, circuit member for use therein and method of manufacturing resin-sealed semiconductor device

Номер патента: US6025640A. Автор: Hiroshi Yagi,Masato Sasaki,Kazuyoshi Togashi. Владелец: DAI NIPPON PRINTING CO LTD. Дата публикации: 2000-02-15.

Semiconductor device package and method of manufacturing the same

Номер патента: US20190122969A1. Автор: Chi-Tsung Chiu,Cheng-Hung KO,Hui-Ying HSIEH,Hui Hua LEE. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2019-04-25.

Semiconductor device package and method of making a semiconductor device package

Номер патента: US20120068323A1. Автор: Boon Huan Gooi,Chip King Tan. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2012-03-22.

Method of manufacture for a silicon-on-plastic semiconductor device with interfacial adhesion layer

Номер патента: US09812350B2. Автор: Julio C. Costa. Владелец: Qorvo US Inc. Дата публикации: 2017-11-07.

Semiconductor device and manufacturing method thereof

Номер патента: US20010049191A1. Автор: Hiroaki Uchida. Владелец: Oki Electric Industry Co Ltd. Дата публикации: 2001-12-06.

Semiconductor device and manufacturing method thereof

Номер патента: US20030124811A1. Автор: Hiroaki Uchida. Владелец: Oki Electric Industry Co Ltd. Дата публикации: 2003-07-03.

Semiconductor devices and methods of manufacturing the same

Номер патента: US09466697B2. Автор: Bo-Un Yoon,Jeong-Nam Han,Sang-Jine Park,Myung-Geun Song. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-10-11.

Manufacturing method of semiconductor device and semiconductor device

Номер патента: US09484387B2. Автор: Makoto Shizukuishi. Владелец: Individual. Дата публикации: 2016-11-01.

Semiconductor device and method of manufacturing the same, apparatus for manufacturing semiconductor device, circuit board, and electronic instrument

Номер патента: US20030013229A1. Автор: Nobuaki Hashimoto. Владелец: Seiko Epson Corp. Дата публикации: 2003-01-16.

Semiconductor device, electronic module and electronic apparatus each having stacked embedded active components in a multilayer wiring board

Номер патента: US11916021B2. Автор: Hirohisa Yasukawa. Владелец: Sony Group Corp. Дата публикации: 2024-02-27.

Semiconductor device and method of manufacturing the same, apparatus for manufacturing semiconductor device, circuit boa and electronic instrument

Номер патента: US6908776B2. Автор: Nobuaki Hashimoto. Владелец: Seiko Epson Corp. Дата публикации: 2005-06-21.

Semiconductor device, semiconductor device package and method of manufacturing the same

Номер патента: US11830834B2. Автор: Chih-Cheng LEE,Hsing Kuo TIEN. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2023-11-28.

Semiconductor device, electronic system, and electrostatic discharge protection method for semiconductor device thereof

Номер патента: US20230290774A1. Автор: Chun-Lu LEE. Владелец: Nanya Technology Corp. Дата публикации: 2023-09-14.

Semiconductor device package and method of manufacturing the same

Номер патента: US20240038677A1. Автор: Ying-Chung Chen,Lu-Ming Lai. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2024-02-01.

Semiconductor device package and method of manufacturing the same

Номер патента: US20170263589A1. Автор: Chang Chi Lee,Dao-Long Chen,Chin-Li Kao,Ta-Chien CHENG,Chien Lin CHANG CHIEN. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2017-09-14.

Method of manufacturing a tab semiconductor device

Номер патента: US5972739A. Автор: Koji Matsui,Yoshitsugu Funada. Владелец: NEC Corp. Дата публикации: 1999-10-26.

Semiconductor device package and method of manufacturing the same

Номер патента: US11811957B2. Автор: Yuanhao Yu,hong jie Chen,Jui-Hsien Wang,Chung Ju YU,Chai-Chi Lin. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2023-11-07.

Power semiconductor device, packaging structure, and electronic device

Номер патента: US20220320271A1. Автор: Fei Hu,Zhaozheng Hou,Yiyu Wang,Yunbin GAO. Владелец: Huawei Technologies Co Ltd. Дата публикации: 2022-10-06.

Power semiconductor device, packaging structure, and electronic device

Номер патента: US11978767B2. Автор: Fei Hu,Zhaozheng Hou,Yiyu Wang,Yunbin GAO. Владелец: Huawei Technologies Co Ltd. Дата публикации: 2024-05-07.

Semiconductor device package and method of manufacturing the same

Номер патента: US11791280B2. Автор: Wen-Pin Huang,Pai-Chou Liu,Li-Hua TAI,Yun-Chih FEI,Sheng-Hong ZHENG. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2023-10-17.

Semiconductor device package and method of manufacturing the same

Номер патента: US20210398921A1. Автор: Jenchun Chen,An-Ping CHIEN. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2021-12-23.

Semiconductor device package and method of manufacturing the same

Номер патента: US20200335452A1. Автор: Wen-Pin Huang,Pai-Chou Liu,Li-Hua TAI,Yun-Chih FEI,Sheng-Hong ZHENG. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2020-10-22.

Semiconductor device package and method of manufacturing the same

Номер патента: US11996373B2. Автор: Jenchun Chen,An-Ping CHIEN. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2024-05-28.

Semiconductor device package and method of manufacturing the same

Номер патента: US20190355676A1. Автор: Shun-Tsat TU,Pei-Jen LO,Yan-Si LIN,Chien-Chi KUO. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2019-11-21.

Semiconductor device package and method of manufacturing the same

Номер патента: US20230387046A1. Автор: Wen-Long Lu. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2023-11-30.

Semiconductor device, electronic system, and electrostatic discharge protection method for semiconductor device thereof

Номер патента: US12002803B2. Автор: Chun-Lu LEE. Владелец: Nanya Technology Corp. Дата публикации: 2024-06-04.

Metallic structure for optical semiconductor device, method for producing the same, and optical semiconductor device using the same

Номер патента: US20200105986A1. Автор: Yasuo Kato,Kazuya Matsuda. Владелец: Nichia Corp. Дата публикации: 2020-04-02.

Metallic structure for optical semiconductor device, method for producing the same, and optical semiconductor device using the same

Номер патента: US20220005986A1. Автор: Yasuo Kato,Kazuya Matsuda. Владелец: Nichia Corp. Дата публикации: 2022-01-06.

Semiconductor devices having isolation insulating layers and methods of manufacturing the same

Номер патента: US20170047243A1. Автор: Sungmin Kim,Heonjong Shin,Byungseo Kim,Sunhom Steve Paak,Hyunjun Bae. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-02-16.

Semiconductor devices having isolation insulating layers and methods of manufacturing the same

Номер патента: US09515172B2. Автор: Sungmin Kim,Heonjong Shin,Byungseo Kim,Sunhom Steve Paak,Hyunjun Bae. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-12-06.

Method of manufacturing resin-encapsulated semiconductor device, and lead frame

Номер патента: US09679835B2. Автор: Shinya Kubota,Masaru Akino. Владелец: Ablic Inc. Дата публикации: 2017-06-13.

Lead frame, method of manufacturing lead frame, semiconductor device and method of manufacturing semiconductor device

Номер патента: US5977615A. Автор: Yukio Yamaguchi,Toru Nomura,Masanori Minamio,Akira Oga. Владелец: Matsushita Electronics Corp. Дата публикации: 1999-11-02.

Semiconductor device module and method of assembly

Номер патента: US20210183841A1. Автор: Elmar Wisotzki. Владелец: Littelfuse Inc. Дата публикации: 2021-06-17.

Structure and method of forming a multiple leadframe semiconductor device

Номер патента: US20030209804A1. Автор: James Knapp,Stephen Germain. Владелец: Semiconductor Components Industries LLC. Дата публикации: 2003-11-13.

Bending and forming method of fabricating exposed leadframes for semiconductor devices

Номер патента: SG71148A1. Автор: David R Kee,Buford H Carter Jr,Jesse E Clark. Владелец: Texas Instruments Inc. Дата публикации: 2000-03-21.

Semiconductor device package and method of manufacturing the same

Номер патента: US20210082782A1. Автор: Ian HU,Ming-Han WANG. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2021-03-18.

Semiconductor device and method of manufacture

Номер патента: US12119292B2. Автор: Chen-Hua Yu,Jiun Yi Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-15.

Method of manufacturing stacked-type semiconductor device

Номер патента: US20090191666A1. Автор: Souu Kumagai. Владелец: Disco Corp. Дата публикации: 2009-07-30.

Methods of manufacturing multi-die semiconductor device packages and related assemblies

Номер патента: US09865578B2. Автор: Wei Zhou,Sony Varghese,Aibin Yu,Zhaohui Ma,Jonathan S. Hacker,Bret K. Street,Shijian Luo. Владелец: Micron Technology Inc. Дата публикации: 2018-01-09.

Method of separating a wafer of semiconductor devices

Номер патента: US09608016B2. Автор: Stefano Schiaffino,Grigoriy Basin,Jipu Lei,Alexander H. Nickel. Владелец: Koninklijke Philips NV. Дата публикации: 2017-03-28.

Semiconductor device package and method of manufacturing the same

Номер патента: US11901252B2. Автор: Ian HU,Ming-Han WANG. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2024-02-13.

Semiconductor device package and method of manufacturing the same

Номер патента: US20240186201A1. Автор: Ian HU,Ming-Han WANG. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2024-06-06.

Semiconductor device package and method of fabricating the same

Номер патента: US20100013076A1. Автор: Pyoung-Wan Kim,Teak-Hoon LEE,Chul-Yong JANG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2010-01-21.

Methods of designing and fabricating a semiconductor device based on determining a least common multiple between select layout pitches

Номер патента: US11854976B2. Автор: Seung Young Lee,Sanghoon Baek. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-12-26.

Semiconductor device packages and methods of formation

Номер патента: US20240107780A1. Автор: Chih-Wei Wu,Wen-Chih Chiou,Ying-Ching Shih,An-Jhih Su,Chia-Nan Yuan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-03-28.

Compound semiconductor device and method of manufacturing the same

Номер патента: US09502525B2. Автор: Atsushi Yamada,Norikazu Nakamura,Kenji Imanishi,Tetsuro ISHIGURO. Владелец: Fujitsu Ltd. Дата публикации: 2016-11-22.

Semiconductor device package and method of manufacturing the same

Номер патента: US20210050649A1. Автор: Shih-Wen Lu,Huei-Shyong CHO,Shao-En HSU. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2021-02-18.

Semiconductor device packages and methods of manufacturing the same

Номер патента: US20210134696A1. Автор: Chih-Pin Hung,Ian HU,Meng-Kai Shih. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2021-05-06.

Semiconductor device package and method of manufacturing the same

Номер патента: US20200283288A1. Автор: Ching-Han Huang,Yu-Hsuan Tsai,Ming Yen LEE,Chia-Hao Sung. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2020-09-10.

Semiconductor device package and method of manufacturing the same

Номер патента: US20180265347A1. Автор: Ching-Han Huang,Yu-Hsuan Tsai,Ming Yen LEE,Chia Hao SUNG. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2018-09-20.

Stack type semiconductor device and method of testing the stack type semiconductor device

Номер патента: US20230307420A1. Автор: Seong Hwi Song. Владелец: SK hynix Inc. Дата публикации: 2023-09-28.

Methods of forming connection bump of semiconductor device

Номер патента: US20130082090A1. Автор: Sun-Hee Park,Moon-Gi Cho,Hwan-Sik Lim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2013-04-04.

Thin semiconductor device and method of manufacturing thin semiconductor device

Номер патента: US20240355719A1. Автор: Shun-Hsing Liao. Владелец: Shunsin Technology Zhongshan Ltd. Дата публикации: 2024-10-24.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20240154031A1. Автор: Masaki Miyazato,Yohei Kagoyama,Mina OHSE. Владелец: Fuji Electric Co Ltd. Дата публикации: 2024-05-09.

Semiconductor device structures and methods of manufacturing the same

Номер патента: US12087851B2. Автор: Yulong Zhang,Ming-Hong CHANG,Junhui Ma. Владелец: Innoscience Suzhou Semiconductor Co Ltd. Дата публикации: 2024-09-10.

Manufacturing method of the semiconductor package, pick and place device, and workpiece handling apparatus

Номер патента: US20240178015A1. Автор: Yung-Chi Lin,Tsang-Jiuh Wu,Hsien-Ju Tsou,Chien-Wei Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-05-30.

Semiconductor device package and methods of manufacture thereof

Номер патента: US09799580B2. Автор: Li Li,Lakshminarayan Viswanathan,Jaynal A. Molla. Владелец: NXP USA Inc. Дата публикации: 2017-10-24.

Semiconductor device, semiconductor module, and electronic apparatus

Номер патента: US20220278210A1. Автор: Katsuhiko Takeuchi,Masashi Yanagita. Владелец: Sony Semiconductor Solutions Corp. Дата публикации: 2022-09-01.

Methods of reinforcing integrated circuitry of semiconductor devices and related semiconductor devices and packages

Номер патента: US20190393110A1. Автор: AJAY Kumar,John House,Hyunsoo Yeom. Владелец: Microchip Technology Inc. Дата публикации: 2019-12-26.

Semiconductor device, template, and method of manufacturing template

Номер патента: US12068244B2. Автор: Yasuhito Yoshimizu,Kaori Umezawa,Kosuke TAKAI. Владелец: Kioxia Corp. Дата публикации: 2024-08-20.

Semiconductor device package and method of manufacturing the same

Номер патента: US20230223354A1. Автор: Meng-Jen Wang,wei da Lin,Hung Chen KUO,Wen Jin HUANG. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2023-07-13.

Semiconductor device package and method of manufacturing the same

Номер патента: US12068259B2. Автор: Meng-Jen Wang,wei da Lin,Hung Chen KUO,Wen Jin HUANG. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2024-08-20.

Semiconductor device packages and method of manufacturing the same

Номер патента: US20210183787A1. Автор: Bernd Karl Appelt,You-Lung Yen. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2021-06-17.

Semiconductor device package and method of manufacturing the same

Номер патента: US20180226348A1. Автор: Hao-Chih HSIEH,Tun-Ching PI. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2018-08-09.

Stacked semiconductor device architecture and method of manufacturing the same

Номер патента: US20220230961A1. Автор: Saehan Park,Seungyoung Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-07-21.

Semiconductor device structures and methods of manufacturing thereof

Номер патента: WO2022116036A1. Автор: Yulong Zhang,Ming-Hong CHANG,Junhui Ma. Владелец: Innoscience (suzhou) Semiconductor Co., Ltd.. Дата публикации: 2022-06-09.

Semiconductor device package and methods of manufacture thereof

Номер патента: US20180012815A1. Автор: Li Li,Lakshminarayan Viswanathan,Jaynal A. Molla. Владелец: NXP USA Inc. Дата публикации: 2018-01-11.

Semiconductor device package and method of manufacturing the same

Номер патента: US20200251420A1. Автор: Wen-Long Lu. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2020-08-06.

Semiconductor device package and methods of manufacture thereof

Номер патента: US20170278763A1. Автор: Li Li,Lakshminarayan Viswanathan,Jaynal A. Molla. Владелец: NXP USA Inc. Дата публикации: 2017-09-28.

Semiconductor device package and method of manufacturing the same

Номер патента: US20240038712A1. Автор: Chieh-Chen Fu,Shih-Yuan Sun,Jung Jui KANG. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2024-02-01.

Stacked semiconductor device, printed circuit board, and method for manufacturing stacked semiconductor device

Номер патента: US09601470B2. Автор: Yuya OKADA. Владелец: Canon Inc. Дата публикации: 2017-03-21.

Semiconductor device package and method of manufacturing the same

Номер патента: US20210358859A1. Автор: Ming-Hung Chen,Hui-Ping JIAN,Wei-Zhen QIU. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2021-11-18.

Semiconductor device package and method of manufacturing same

Номер патента: US20200126814A1. Автор: Un Byoung Kang,Yeong Kwon KO,Jun Yeong Heo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-04-23.

Semiconductor device packages and methods of manufacturing the same

Номер патента: US11296043B2. Автор: HUNG-YI LIN,Chang-Yu Lin,Cheng-Yuan KUNG. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2022-04-05.

Semiconductor device package and method of manufacturing the same

Номер патента: US20230335454A1. Автор: Wei-Tung CHANG. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2023-10-19.

Semiconductor device substrate and method of manufacturing semiconductor device

Номер патента: US6469382B1. Автор: Yukio Nomura,Kouichi Hotozuka. Владелец: NEC Corp. Дата публикации: 2002-10-22.

Semiconductor device package and method of manufacturing the same

Номер патента: US20220344230A1. Автор: Wei-Tung CHANG. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2022-10-27.

Semiconductor device package and method of manufacturing the same

Номер патента: US20210066354A1. Автор: Sheng-Yu Chen,Chang-Lin Yeh,Ming-Hung Chen,Yung I. Yeh. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2021-03-04.

Semiconductor device package and method of manufacturing the same

Номер патента: US20190318938A1. Автор: Chanyuan Liu. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2019-10-17.

Semiconductor device package and method of manufacturing the same

Номер патента: US20210327822A1. Автор: Meng-Jen Wang,wei da Lin,Hung Chen KUO,Wen Jin HUANG. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2021-10-21.

Power semiconductor device package and method of assembling thereof

Номер патента: EP3944305A1. Автор: Franck ERGAS. Владелец: Infineon Technologies North America Corp. Дата публикации: 2022-01-26.

Method of selectively depositing glass on semiconductor devices

Номер патента: CA1038329A. Автор: Robert B. Comizzoli. Владелец: RCA Corp. Дата публикации: 1978-09-12.

Method of selectively depositing glass on semiconductor devices

Номер патента: US3895127A. Автор: Robert Benedict Comizzoli. Владелец: RCA Corp. Дата публикации: 1975-07-15.

Method of producing epoxy resin encapsulated semiconductor device

Номер патента: MY112215A. Автор: ITO Hideo,MINAMI Katsunori. Владелец: Sumitomo Bakelite Co. Дата публикации: 2001-04-30.

Methods of making passivating layers for semiconductor devices

Номер патента: GB1532456A. Автор: . Владелец: Sony Corp. Дата публикации: 1978-11-15.

Stacked semiconductor device, printed circuit board, and method for manufacturing stacked semiconductor device

Номер патента: US20150003029A1. Автор: Yuya OKADA. Владелец: Canon Inc. Дата публикации: 2015-01-01.

Semiconductor device and method of manufacturing the same

Номер патента: US20150069594A1. Автор: Hirokazu Kato,Tadatoshi Danno,Keita Takada. Владелец: Renesas Electronics Corp. Дата публикации: 2015-03-12.

Semiconductor device and method of manufacturing the same

Номер патента: US20160133549A1. Автор: Hirokazu Kato,Tadatoshi Danno,Keita Takada. Владелец: Renesas Electronics Corp. Дата публикации: 2016-05-12.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US11114560B2. Автор: Keiji Okumura. Владелец: Fuji Electric Co Ltd. Дата публикации: 2021-09-07.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US11469303B2. Автор: Makoto Utsumi,Masaki Miyazato. Владелец: Fuji Electric Co Ltd. Дата публикации: 2022-10-11.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US12046642B2. Автор: Shinji Fujikake. Владелец: Fuji Electric Co Ltd. Дата публикации: 2024-07-23.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20240290842A1. Автор: Naoyuki Ohse. Владелец: Fuji Electric Co Ltd. Дата публикации: 2024-08-29.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20220231128A1. Автор: Shinji Fujikake. Владелец: Fuji Electric Co Ltd. Дата публикации: 2022-07-21.

Method of manufacturing high-voltage semiconductor device and low-voltage semiconductor device

Номер патента: US7910466B2. Автор: Choul Joo Ko. Владелец: Dongbu Electronics Co Ltd. Дата публикации: 2011-03-22.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US12080762B2. Автор: Makoto Utsumi,Naoyuki Ohse. Владелец: Fuji Electric Co Ltd. Дата публикации: 2024-09-03.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US09978598B2. Автор: Makoto Utsumi,Yoshiyuki Sakai. Владелец: Fuji Electric Co Ltd. Дата публикации: 2018-05-22.

Semiconductor device package and method of manufacturing the same

Номер патента: US12089349B2. Автор: Sheng-Yu Chen,Yung I Yeh,Chang-Lin Yeh,Ming-Hung Chen. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2024-09-10.

Method of manufacturing silicon carbide semiconductor device

Номер патента: US20240234496A1. Автор: Shinsuke Harada,Kensuke Takenaka. Владелец: Fuji Electric Co Ltd. Дата публикации: 2024-07-11.

Method of manufacturing silicon carbide semiconductor device

Номер патента: US20240339323A1. Автор: Hidenori Satou,Atsushi Yoshimoto,Takahito Kojima. Владелец: Fuji Electric Co Ltd. Дата публикации: 2024-10-10.

Ceramic film and method of manufacturing the same, semiconductor device, and piezoelectric device

Номер патента: US20030213426A1. Автор: Eiji Natori,Koichi Furuyama,Yuzo Tasaki. Владелец: Seiko Epson Corp. Дата публикации: 2003-11-20.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US09887270B2. Автор: Fumikazu Imai,Takuya Komatsu,Masanobu IWAYA. Владелец: Fuji Electric Co Ltd. Дата публикации: 2018-02-06.

Method of manufacturing silicon carbide semiconductor device including forming an electric field control region by a laser doping technology

Номер патента: US09825145B2. Автор: Haruo Nakazawa,Yasukazu Seki,Kenichi Iguchi,Koh Yoshikawa. Владелец: Fuji Electric Co Ltd. Дата публикации: 2017-11-21.

Method of manufacturing silicon carbide semiconductor device

Номер патента: US7989231B2. Автор: Yuuichi Takeuchi,Atsuya Akiba. Владелец: Denso Corp. Дата публикации: 2011-08-02.

Method of manufacturing silicon carbide semiconductor device by using protective films to activate dopants in the silicon carbide semiconductor device

Номер патента: US09691616B2. Автор: Taku Horii. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2017-06-27.

Silicon carbide semiconductor device, silicon carbide semiconductor assembly, and method of manufacturing silicon carbide semiconductor device

Номер патента: US20200152594A1. Автор: Makoto Utsumi,Yoshiyuki Sakai. Владелец: Fuji Electric Co Ltd. Дата публикации: 2020-05-14.

Semiconductor devices, transistors, and methods of manufacture thereof

Номер патента: US09837401B2. Автор: Hung-Chih Yu,Shih-Che Lin,Ching-Kun Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-12-05.

Method of manufacturing silicon carbide semiconductor device

Номер патента: US09941362B2. Автор: Masayuki Miyazaki,Hidenao Kuribayashi. Владелец: Fuji Electric Co Ltd. Дата публикации: 2018-04-10.

Method of manufacturing silicon carbide semiconductor device

Номер патента: US09793121B2. Автор: Yasuyuki Kawada. Владелец: Fuji Electric Co Ltd. Дата публикации: 2017-10-17.

Method of forming ferroelectric film, ferroelectric memory, method of manufacturing the same, semiconductor device, and method of manufacturing the same

Номер патента: US20040080991A1. Автор: Tatsuo Sawasaki. Владелец: Seiko Epson Corp. Дата публикации: 2004-04-29.

Method of making a charge compensation semiconductor device using direct bonding and corresponding device

Номер патента: EP1119871A1. Автор: Raymond J. Grover. Владелец: KONINKLIJKE PHILIPS ELECTRONICS NV. Дата публикации: 2001-08-01.

Semiconductor device and method of manufacturing semiconductor device

Номер патента: GB2589484A. Автор: Nakamura Keisuke,YAGYU Eiji,YOSHITSUGU Koji. Владелец: Mitsubishi Electric Corp. Дата публикации: 2021-06-02.

Exposure methods using e-beams and methods of manufacturing masks and semiconductor devices therefrom

Номер патента: US09671686B2. Автор: Sang-Hee Lee,Jin Choi,In-kyun Shin,Byoung-Sup Ahn. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-06-06.

Method of manufacturing silicon carbide semiconductor device

Номер патента: US09613809B2. Автор: Taku Horii,Masaki Kijima. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2017-04-04.

Semiconductor device structures and methods of manufacturing the same

Номер патента: US12034070B2. Автор: Peng-Yi Wu. Владелец: Innoscience Zhuhai Technology Co Ltd. Дата публикации: 2024-07-09.

Semiconductor device package and method of manufacturing the same

Номер патента: US20210257246A1. Автор: Hsin-ying Ho,Cheng-Ling Huang,Ying-Chung Chen,Chang Chin TSAI,Wei Ling MA. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2021-08-19.

Semiconductor device structures and methods of manufacturing the same

Номер патента: US20220376096A1. Автор: Peng-Yi Wu. Владелец: Innoscience Zhuhai Technology Co Ltd. Дата публикации: 2022-11-24.

Semiconductor device package and method of manufacturing the same

Номер патента: US20170200682A1. Автор: Chieh-Chen Fu,Cheng-Nan Lin,Kuo Hsien Liao,I-Chia Lin. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2017-07-13.

Semiconductor device package and method of manufacturing the same

Номер патента: US09871005B2. Автор: Chieh-Chen Fu,Cheng-Nan Lin,Kuo Hsien Liao,I-Chia Lin. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2018-01-16.

Method of manufacturing thin film semiconductor device

Номер патента: US09328414B2. Автор: Masafumi Kunii. Владелец: Japan Display Inc. Дата публикации: 2016-05-03.

Group-iii nitride semiconductor device, epitaxial substrate, and method of fabricating group-iii nitride semiconductor device

Номер патента: US20120299010A1. Автор: Masaki Ueno,Takao Nakamura,Takashi Kyono,Katsushi Akita,Yusuke Yoshizumi,Takamichi Sumitomo,Yohei Enya. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2012-11-29.

Methods of forming hydrophobic surfaces on semiconductor device structures, methods of forming semiconductor device structures, and semiconductor device structures

Номер патента: US20130292647A1. Автор: Prashant Raghu,Ian C. Laboriante. Владелец: Micron Technology Inc. Дата публикации: 2013-11-07.

Semiconductor device, electronic component, and electronic device

Номер патента: US09443564B2. Автор: Kiyoshi Kato,Tatsuya Onuki,Takahiko Ishizu,Wataru Uesugi. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2016-09-13.

Semiconductor device, electronic component, and electronic device

Номер патента: US12119353B2. Автор: Shunpei Yamazaki,Kiyoshi Kato,Tomoaki Atsumi. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2024-10-15.

Monolithic array of semiconductor devices, template wafer, method of manufacturing a template wafer, and method of manufacturing an array of semiconductor devices

Номер патента: WO2024062256A1. Автор: Tongtong ZHU. Владелец: Poro Technologies Ltd. Дата публикации: 2024-03-28.

Method of manufacturing electronic device using cyclic doping process, and electronic device manufactured by the same

Номер патента: US20240136187A1. Автор: Ki Hyun Kim,Ki Seok Kim,Hee Ju Kim,Ji Eun Kang,Seong Jae Yu,Hyun Woo Tak,Geun Young Yeom,Doo San KIM,You Jin JI,Yun Jong JANG. Владелец: Sungkyunkwan University Research and Business Foundation. Дата публикации: 2024-04-25.

Method of manufacturing electronic device using cyclic doping process, and electronic device manufactured by the same

Номер патента: US20240234146A9. Автор: Ki Hyun Kim,Ki Seok Kim,Hee Ju Kim,Ji Eun Kang,Seong Jae Yu,Hyun Woo Tak,Geun Young Yeom,Doo San KIM,You Jin JI,Yun Jong JANG. Владелец: Sungkyunkwan University Research and Business Foundation. Дата публикации: 2024-07-11.

Method of manufacturing transistor and semiconductor device including the same

Номер патента: US09530848B2. Автор: Moon Sik SEO. Владелец: SK hynix Inc. Дата публикации: 2016-12-27.

Semiconductor device structure and methods of forming the same

Номер патента: US20240234419A1. Автор: Chih-Hao Wang,Kuo-Cheng Chiang,Zhi-Chang Lin,Jung-Hung CHANG,Shih-Cheng Chen,Chien Ning Yao,Lo Heng CHANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-11.

Semiconductor devices having metal gate and method for manufacturing semiconductor devices having metal gate

Номер патента: US09831133B2. Автор: Ching-Wen Hung,Chih-Sen Huang,Yi-Wei Chen,Chien-Ting Lin,Chao-Hung Lin,Chih-Kai Hsu,Jyh-Shyang Jenq,Shih-Hung Tsai,Li-Wei Feng,Jia-Rong Wu,Yi-Hui Lee,Ying-Cheng Liu,Yi-Kuan Wu. Владелец: United Microelectronics Corp. Дата публикации: 2017-11-28.

Semiconductor device mounting structure, method of manufacturing the same, and electronic apparatus

Номер патента: US20130341767A1. Автор: Manabu Watanabe,Takashi Kanda,Masateru Koide,Kenji Fukuzono. Владелец: Fujitsu Ltd. Дата публикации: 2013-12-26.

Semiconductor device structure and methods of forming the same

Номер патента: US20240243015A1. Автор: Cheng-Wei Chang,Shahaji B. More. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-18.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20180090320A1. Автор: Mitsuo Okamoto,Takashi Tsutsumi,Kenji Fukuda,Masaki Miyazato,Youichi Makifuchi,Tsuyoshi ARAOKA. Владелец: Fuji Electric Co Ltd. Дата публикации: 2018-03-29.

Semiconductor device structure and methods of forming the same

Номер патента: US20230402455A1. Автор: Ryan Chia-Jen Chen,Yih-Ann Lin,Jih-Jse Lin,Shu-Yuan Ku,Ya-Yi Tsai,Sheng-Yi Hsiao,Tzu-Ging LIN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-12-14.

Method of forming a nano-FET semiconductor device

Номер патента: US12040382B2. Автор: Yee-Chia Yeo,Sen-Hong Syue,Huicheng Chang,Yi-Rui Chen,Wen-Kai Lin,Chen-Fong Tsai,Li-Chi Yu,Yoh-Rong Liu,Cheng-I Chu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-16.

Method of forming a nano-fet semiconductor device

Номер патента: US20240332401A1. Автор: Yee-Chia Yeo,Sen-Hong Syue,Huicheng Chang,Yi-Rui Chen,Wen-Kai Lin,Chen-Fong Tsai,Li-Chi Yu,Yoh-Rong Liu,Cheng-I Chu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-03.

Method of patterning features of a semiconductor device

Номер патента: US09627262B2. Автор: Ming-Feng Shieh,Ru-Gun Liu,Chih-Ming Lai,Wen-Chun Huang,Wei-Chao Chiu,Chen-Yu Chen,Nian-Fuh Cheng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-04-18.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20210328025A1. Автор: Takahito Kojima,Naoyuki Ohse. Владелец: Fuji Electric Co Ltd. Дата публикации: 2021-10-21.

Method of manufacturing NOR-type mask ROM device and semiconductor device including the same

Номер патента: US7364973B2. Автор: Hyun-Khe Yoo,Weon-Ho Park,Byoung-Ho Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2008-04-29.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20200279947A1. Автор: Fumitoshi Yamamoto. Владелец: Mitsubishi Electric Corp. Дата публикации: 2020-09-03.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US11929400B2. Автор: Takahito Kojima,Naoyuki Ohse. Владелец: Fuji Electric Co Ltd. Дата публикации: 2024-03-12.

Method of manufacturing NOR-type mask ROM device and semiconductor device including the same

Номер патента: US20070275509A1. Автор: Hyun-Khe Yoo,Weon-Ho Park,Byoung-Ho Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2007-11-29.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20210167173A1. Автор: Takumi Fujimoto. Владелец: Fuji Electric Co Ltd. Дата публикации: 2021-06-03.

Semiconductor device, imaging element, and electronic device

Номер патента: US12075177B2. Автор: Atsushi Kato. Владелец: Sony Semiconductor Solutions Corp. Дата публикации: 2024-08-27.

Semiconductor device structures and methods of forming semiconductor structures

Номер патента: US09761724B2. Автор: Justin K. Brask,Brian S. Doyle,Uday Shah,Robert S. Chau,Suman Datta,Jack Kavalieros,Amlan Majumdar. Владелец: Intel Corp. Дата публикации: 2017-09-12.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20230253491A1. Автор: Manabu Takei,Shinsuke Harada,Masakazu Baba. Владелец: Fuji Electric Co Ltd. Дата публикации: 2023-08-10.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20200303541A1. Автор: Keiji Okumura. Владелец: Fuji Electric Co Ltd. Дата публикации: 2020-09-24.

Semiconductor Device Cleaning Solution, Method of Use, and Method of Manufacture

Номер патента: US20230365903A1. Автор: Chun-Wei Hsu,Chi-Jen Liu,Yi-Sheng Lin,Liang-Guang Chen,Ling-Fu Nieh,Pinlei Edmund CHU. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-16.

Semiconductor device cleaning solution, method of use, and method of manufacture

Номер патента: US11773353B2. Автор: Chun-Wei Hsu,Chi-Jen Liu,Yi-Sheng Lin,Liang-Guang Chen,Ling-Fu Nieh,Pinlei Edmund CHU. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-10-03.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20200343345A1. Автор: Makoto Utsumi,Tsuyoshi ARAOKA. Владелец: Fuji Electric Co Ltd. Дата публикации: 2020-10-29.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20230326960A1. Автор: Keishirou KUMADA. Владелец: Fuji Electric Co Ltd. Дата публикации: 2023-10-12.

Method of manufacturing GaN-based semiconductor device

Номер патента: US8633087B2. Автор: Hideki Matsubara,Kuniaki Ishihara. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2014-01-21.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20240047532A1. Автор: Shingo Hayashi,Yasuyuki Hoshi. Владелец: Fuji Electric Co Ltd. Дата публикации: 2024-02-08.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20200144371A1. Автор: Takeshi Tawara,Mina OHSE. Владелец: Fuji Electric Co Ltd. Дата публикации: 2020-05-07.

Epitaxial structure of semiconductor device, device and method of manufacturing epitaxial structure

Номер патента: US20240021671A1. Автор: HUI Zhang,Wenlong Zhou,Shiqiang Li,Kewei Tan,Susu KONG,Xiaoqing Du. Владелец: Dynax Semiconductor Inc. Дата публикации: 2024-01-18.

Semiconductor device structure and methods of forming the same

Номер патента: US12027597B2. Автор: Cheng-Han Lee,Shahaji B. More,Jia-Ying Ma. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-02.

Method of fabricating a metal gate semiconductor device

Номер патента: US20130260547A1. Автор: Ming Zhu,Bao-Ru Young,Hak-Lay Chuang,Sheng-Chen Chung,Jyun-Ming Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2013-10-03.

Method of Forming a Super Junction Semiconductor Device Having Stripe-Shaped Regions of the Opposite Conductivity Types

Номер патента: US20160104768A1. Автор: Markus Schmitt,Hans Weber,Rolf Weis,Franz Hirler,Armin Willmeroth,Thomas Wahls. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2016-04-14.

Semiconductor device structure and methods of forming the same

Номер патента: US20240321985A1. Автор: Cheng-Han Lee,Shahaji B. More,Jia-Ying Ma. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-26.

Method of forming a super junction semiconductor device having stripe-shaped regions of the opposite conductivity types

Номер патента: US09484400B2. Автор: Markus Schmitt,Hans Weber,Rolf Weis,Franz Hirler,Armin Willmeroth,Thomas Wahls. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2016-11-01.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US10236372B2. Автор: Keiji Okumura,Setsuko Wakimoto. Владелец: Fuji Electric Co Ltd. Дата публикации: 2019-03-19.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20210217852A1. Автор: Makoto Utsumi,Masaki Miyazato. Владелец: Fuji Electric Co Ltd. Дата публикации: 2021-07-15.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20210175369A1. Автор: Takafumi Uchida,Takahito Kojima,Yuichi HASHIZUME,Naoyuki Ohse. Владелец: Fuji Electric Co Ltd. Дата публикации: 2021-06-10.

Semiconductor device structure and methods of forming the same

Номер патента: US20240347592A1. Автор: Chia-Hao Kuo,Fu-Hsiang Su,Shih-Hsun Chang,Je-Wei Hsu,Hong-Chih Chen,Ping-Chun Wu,Ting-Huan Hsieh. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-17.

Method of manufacturing an organic EL display device, and organic EL display device

Номер патента: US09865834B2. Автор: Masakazu Kaida,Noriyoshi Kanda. Владелец: Japan Display Inc. Дата публикации: 2018-01-09.

Method of forming strained structures of semiconductor devices

Номер патента: US09748388B2. Автор: Clement Hsingjen Wann,Chih-Hsin Ko,Cheng-Hsien Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-08-29.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US11600702B2. Автор: Yasuyuki Kawada. Владелец: Fuji Electric Co Ltd. Дата публикации: 2023-03-07.

Semiconductor device package and method of manufacturing the same

Номер патента: US11744024B2. Автор: Sheng-Yu Chen,Yung I Yeh,Chang-Lin Yeh,Ming-Hung Chen. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2023-08-29.

Semiconductor device package and method of manufacturing the same

Номер патента: US20220141971A1. Автор: Sheng-Yu Chen,Chang-Lin Yeh,Ming-Hung Chen,Yung I. Yeh. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2022-05-05.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20220013641A1. Автор: Yasuyuki Kawada. Владелец: Fuji Electric Co Ltd. Дата публикации: 2022-01-13.

Semiconductor device package and method of manufacturing the same

Номер патента: US20210076510A1. Автор: Sheng-Yu Chen,Chang-Lin Yeh,Ming-Hung Chen,Yung I. Yeh. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2021-03-11.

Semiconductor device package and method of manufacturing the same

Номер патента: US20230413454A1. Автор: Sheng-Yu Chen,Yung I Yeh,Chang-Lin Yeh,Ming-Hung Chen. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2023-12-21.

Semiconductor device comprising oxide conductor and display device including the semiconductor device

Номер патента: US09837547B2. Автор: Junichi Koezuka,Yukinori Shima,Masami Jintyou. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2017-12-05.

Semiconductor device and method of manufacturing such a semiconductor device

Номер патента: EP1784857A1. Автор: Robertus A. M. Wolters,Robert Lander,Jacob C. Hooker. Владелец: KONINKLIJKE PHILIPS ELECTRONICS NV. Дата публикации: 2007-05-16.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20180301536A1. Автор: Makoto Utsumi,Fumikazu Imai,Yasuhiko OONISHI. Владелец: Fuji Electric Co Ltd. Дата публикации: 2018-10-18.

Method of manufacturing a multilayer semiconductor device

Номер патента: US4596604A. Автор: Shin-ichi Ogawa,Yasuaki Terui,Shigenobu Akiyama. Владелец: Agency of Industrial Science and Technology. Дата публикации: 1986-06-24.

Method of forming complementary metal oxide semiconductor device with work function layer

Номер патента: US09721840B2. Автор: Chien-Chung Huang,Yu-Ping Wang,Chien-Ming Lai,Ya-Huei Tsai,Yu-Ting Tseng. Владелец: United Microelectronics Corp. Дата публикации: 2017-08-01.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20240021737A1. Автор: Yuichi HASHIZUME. Владелец: Fuji Electric Co Ltd. Дата публикации: 2024-01-18.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20180138273A1. Автор: Takashi Tsuji. Владелец: Fuji Electric Co Ltd. Дата публикации: 2018-05-17.

Method of manufacturing III-nitride semiconductor devices

Номер патента: US6486050B1. Автор: Ching-ting Lee. Владелец: Opto Tech Corp. Дата публикации: 2002-11-26.

Semiconductor device structure and method of manufacturing the same

Номер патента: US9059126B1. Автор: Chien-Hsuan Liu,Chao-Chi Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2015-06-16.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20170271468A1. Автор: Fumikazu Imai,Takuya Komatsu,Masanobu IWAYA. Владелец: Fuji Electric Co Ltd. Дата публикации: 2017-09-21.

Method of manufacturing silicon carbide semiconductor device

Номер патента: US20190157398A1. Автор: Makoto Utsumi,Fumikazu Imai,Yasuhiko OONISHI. Владелец: Fuji Electric Co Ltd. Дата публикации: 2019-05-23.

Method of forming oxide film including two non-oxygen elements, method of manufacturing semiconductor device, method of forming dielectric film, and semiconductor device

Номер патента: US20210028010A1. Автор: Seungmin Ryu,Younjoung CHO,Younsoo Kim,Sunmin Moon,Haeryong Kim,Kyooho JUNG,Jeonggyu SONG,Changsu WOO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-01-28.

Method of forming oxide film including two non-oxygen elements, method of manufacturing semiconductor device, method of forming dielectric film, and semiconductor device

Номер патента: US20210343524A1. Автор: Seungmin Ryu,Younjoung CHO,Younsoo Kim,Sunmin Moon,Haeryong Kim,Kyooho JUNG,Jeonggyu SONG,Changsu WOO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-11-04.

Method of manufacturing silicon carbide semiconductor device

Номер патента: US20220336219A1. Автор: Daisuke Taniguchi,Toshikazu Tanioka,Junya MIWA. Владелец: Mitsubishi Electric Corp. Дата публикации: 2022-10-20.

Method of manufacturing silicon carbide semiconductor device

Номер патента: US20160314973A1. Автор: Yasuyuki Kawada. Владелец: Fuji Electric Co Ltd. Дата публикации: 2016-10-27.

Semiconductor device with gate structure and method for fabricating the semiconductor device

Номер патента: US20080157205A1. Автор: Yong-Soo Kim,Min-Gyu Sung,Heung-Jae Cho,Kwan-Yong Lim,Hong-Seon Yang. Владелец: Hynix Semiconductor Inc. Дата публикации: 2008-07-03.

Method of manufacturing silicon carbide semiconductor device

Номер патента: CA2669949A1. Автор: Kazuhiro Fujikawa. Владелец: Kazuhiro Fujikawa. Дата публикации: 2008-06-05.

Method of manufacturing silicon carbide semiconductor device

Номер патента: CA2667247A1. Автор: Takeyoshi Masuda,Kazuhiro Fujikawa. Владелец: Kazuhiro Fujikawa. Дата публикации: 2008-05-08.

Method of manufacturing silicon carbide semiconductor device

Номер патента: US20160240380A1. Автор: Taku Horii. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2016-08-18.

Method of Manufacturing a Power Semiconductor Device

Номер патента: US20190157401A1. Автор: Hans-Joachim Schulze,Christoph Weiss,Daniel Schloegl,Matthias Kuenle. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2019-05-23.

Method of manufacturing silicon carbide semiconductor device

Номер патента: US20230154999A1. Автор: Hidemoto Tomita. Владелец: Mirise Technologies Corp. Дата публикации: 2023-05-18.

Semiconductor device structures and methods of manufacturing the same

Номер патента: WO2021258293A1. Автор: Peng-Yi Wu. Владелец: Innoscience (Zhuhai) Technology Co., Ltd.. Дата публикации: 2021-12-30.

Semiconductor device, electronic component, and electronic device

Номер патента: US20240088162A1. Автор: Shunpei Yamazaki,Kiyoshi Kato,Tomoaki Atsumi. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2024-03-14.

Method of manufacturing and inspecting semiconductor devices

Номер патента: CA2126292A1. Автор: Takashi Iwasaki,Yasuhiro Iguchi,Nobuhisa Tanaka,Shun-Ichi Yoneyama. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 1994-12-24.

Semiconductor device, pattern design method of a semiconductor device and program for a pattern design method

Номер патента: US20060094190A1. Автор: Satoshi Matsuda. Владелец: Toshiba Corp. Дата публикации: 2006-05-04.

Semiconductor device, electronic component, and electronic device

Номер патента: US20170110458A1. Автор: Takanori Matsuzaki,Tatsuya Onuki. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2017-04-20.

Semiconductor device structure and methods of forming the same

Номер патента: US20240222429A1. Автор: Marcus Johannes Henricus Van Dal. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-04.

Method of forming beam leads on semiconductor devices and integrated circuits

Номер патента: US3653999A. Автор: Clyde Rhea Fuller. Владелец: Texas Instruments Inc. Дата публикации: 1972-04-04.

Semiconductor device structure and methods of forming the same

Номер патента: US11869892B2. Автор: Jhon Jhy Liaw. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-01-09.

Method of forming a pattern of semiconductor device of a semiconductor device on a semiconductor substrate by using an extreme ultraviolet mask

Номер патента: US20230106148A1. Автор: Kisung Kim,Sangoh PARK. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-04-06.

Method of forming gate line of semiconductor device

Номер патента: US20100048014A1. Автор: Chang Ki Park. Владелец: Hynix Semiconductor Inc. Дата публикации: 2010-02-25.

Semiconductor device, manufacturing method thereof, and display apparatus using the semiconductor device

Номер патента: US20110108841A1. Автор: Mutsuko Hatano,Junichi Hanna,Masatoshi Wakagi,Akiko Kagatsume,Etsuko Nishimura,Isao Suzumura,Mieko Matsumura,Kenichi Onisawa. Владелец: Tokyo Institute of Technology NUC. Дата публикации: 2011-05-12.

Method of fabrication of adjacent coplanar semiconductor devices

Номер патента: US5376229A. Автор: Steven D. Lester,Jeffrey N. Miller,Danny E. Mars. Владелец: Hewlett Packard Co. Дата публикации: 1994-12-27.

Methods of forming silicide layer of semiconductor device

Номер патента: US20050142727A1. Автор: Jin Jung. Владелец: DongbuAnam Semiconductor Inc. Дата публикации: 2005-06-30.

Semiconductor device, imaging element, and electronic device

Номер патента: US20230007202A1. Автор: Atsushi Kato. Владелец: Sony Semiconductor Solutions Corp. Дата публикации: 2023-01-05.

Method of forming metal silicide layer, semiconductor device and method of fabricating same

Номер патента: US10490647B1. Автор: Yugui Zhang,Jianzhi Fang,Kangjun Peng,Qunzheng Lin. Владелец: Nexchip Semiconductor Corp. Дата публикации: 2019-11-26.

Semiconductor device structure and methods of forming the same

Номер патента: US20240030318A1. Автор: Cheng-Wei Chang,Chi-Yu Chou,Shahaji B. More,Yueh-Ching Pai. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-01-25.

Semiconductor device structure and methods of forming the same

Номер патента: US20220165730A1. Автор: Chih-Hao Wang,Kuo-Cheng Chiang,Lo-Heng Chang,Zhi-Chang Lin,Jung-Hung CHANG,Shih-Cheng Chen,Chien Ning Yao. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-05-26.

Semiconductor device structure and methods of forming the same

Номер патента: US11967594B2. Автор: Chih-Hao Wang,Kuo-Cheng Chiang,Zhi-Chang Lin,Jung-Hung CHANG,Shih-Cheng Chen,Chien Ning Yao,Lo Heng CHANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-04-23.

Semiconductor device structure and methods of forming the same

Номер патента: US20230369455A1. Автор: Ling-Sung Wang,Yung-Yu Chen,Yi-Ming Lin,Jhen-Wei CHEN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-16.

Crystalline inzno oxide semiconductor, method of forming the same, and semiconductor device including the crystalline inzno oxide semiconductor

Номер патента: EP4375400A1. Автор: Seonghwan Ryu,Kwanghee Lee,Sangwook Kim,Jinseong PARK,Hyemi KIM. Владелец: Industry University Cooperation Foundation IUCF HYU. Дата публикации: 2024-05-29.

Crystalline inzno oxide semiconductor, method of forming the same, and semiconductor device including the crystalline inzno oxide semiconductor

Номер патента: US20240178324A1. Автор: Seonghwan Ryu,Kwanghee Lee,Sangwook Kim,Jinseong PARK,Hyemi KIM. Владелец: Industry University Cooperation Foundation IUCF HYU. Дата публикации: 2024-05-30.

Semiconductor device structure and methods of forming the same

Номер патента: US20230378269A1. Автор: Shahaji B. More. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-23.

Semiconductor device structure and methods of forming the same

Номер патента: US11830912B2. Автор: Shahaji B. More. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-28.

Semiconductor devices having metal gate and method for manufacturing semiconductor devices having metal gate

Номер патента: US9530778B1. Автор: Ching-Wen Hung,Chih-Sen Huang,Yi-Wei Chen,Chien-Ting Lin,Chao-Hung Lin,Chih-Kai Hsu,Jyh-Shyang Jenq,Shih-Hung Tsai,Li-Wei Feng,Jia-Rong Wu,Yi-Hui Lee,Ying-Cheng Liu,Yi-Kuan Wu. Владелец: United Microelectronics Corp. Дата публикации: 2016-12-27.

Methods of forming semiconductor device structures, and methods of forming capacitor structures

Номер патента: US10629671B2. Автор: Dan B. Millward,J. Neil Greeley. Владелец: Micron Technology Inc. Дата публикации: 2020-04-21.

Semiconductor device structures and methods of forming semiconductor structures

Номер патента: WO2007002426A3. Автор: Justin Brask,Uday Shah,Brian Doyle,Suman Datta,Robert Chau,Jack Kavalieros,Amlan Majumdar. Владелец: Amlan Majumdar. Дата публикации: 2007-03-15.

Method of making silicon-on-sapphire semiconductor devices

Номер патента: US4775641A. Автор: Glenn W. Cullen,Michael T. Duffy. Владелец: General Electric Co. Дата публикации: 1988-10-04.

Method of forming gate electrode in semiconductor device

Номер патента: US20040259369A1. Автор: Cha Dong,Ho Son. Владелец: Individual. Дата публикации: 2004-12-23.

Method of fabricating gate oxide of semiconductor device

Номер патента: US20190096682A1. Автор: Yasutoshi Okuno,Andrew Joseph Kelly,Yusuke Oniki,Ta-Chun Ma. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2019-03-28.

Semiconductor Device Structure and Method of Forming Same

Номер патента: US20160197175A1. Автор: Yu-Lien Huang,Tung Ying Lee. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-07-07.

Method for Protecting a Semiconductor Device Against Degradation and a Method for Manufacturing a Semiconductor Device Protected Against Hot Charge Carriers

Номер патента: US20140070356A1. Автор: Anton Mauder,Hans-Joachim Schulze. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2014-03-13.

Semiconductor device structure and methods of forming the same

Номер патента: US20240096892A1. Автор: Jhon Jhy Liaw. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-03-21.

Semiconductor Device Structure and Method of Forming Same

Номер патента: US20140252431A1. Автор: Yu-Lien Huang,Tung Ying Lee. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2014-09-11.

Low cost method of fabricating shallow junction, Schottky semiconductor devices

Номер патента: US5635414A. Автор: Jun Wu,Joseph Chan,Gregory Zakaluk,Dennis Garbis,Willem Einthoven,Jack Eng,John Amato. Владелец: Individual. Дата публикации: 1997-06-03.

Method of fabricating hybrid impact-ionization semiconductor device

Номер патента: US20110227161A1. Автор: Ming Zhu,Lee-Wee Teo,Harry Hak-Lay Chuang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2011-09-22.

Methods of forming patterns of a semiconductor device

Номер патента: US20150076617A1. Автор: Jong-wook Lee,Myeong-Cheol Kim,Cheol Kim,Si-Young Choi,Choong-ho Lee,Jong-Chan Shin,Jong-Seo Hong,Il-Sup Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2015-03-19.

Semiconductor device, reservoir computing system, and method for manufacturing semiconductor device

Номер патента: US20230015231A1. Автор: Kenichi Kawaguchi,Tsuyoshi Takahashi. Владелец: Fujitsu Ltd. Дата публикации: 2023-01-19.

Semiconductor device structure and methods of forming the same

Номер патента: US20230197805A1. Автор: Cheng-Han Lee,Shahaji B. More,Jia-Ying Ma. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-06-22.

Silicon carbide semiconductor device, power converter, and method for manufacturing silicon carbide semiconductor device

Номер патента: US20220149173A1. Автор: Tomoaki Noguchi,Yosuke Nakanishi. Владелец: Mitsubishi Electric Corp. Дата публикации: 2022-05-12.

Semiconductor Device Including Auxiliary Structure and Methods for Manufacturing A Semiconductor Device

Номер патента: US20130240985A1. Автор: Franz Hirler,Markus Zundel. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2013-09-19.

Method of forming a pattern in semiconductor device manufacturing process

Номер патента: US5236547A. Автор: Shigeki Takahashi,Yasuhiro Shiraki. Владелец: Toshiba Corp. Дата публикации: 1993-08-17.

Semiconductor device with polycrystalline silicon active region and ic including semiconductor device

Номер патента: CA1218470A. Автор: Hisao Hayashi,Chiaki Sakai,Hisayoshi Yamoto. Владелец: Sony Corp. Дата публикации: 1987-02-24.

Method of forming gate pattern and semiconductor device

Номер патента: US20120276727A1. Автор: QIYANG He,YIYING Zhang. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2012-11-01.

Semiconductor device structure and methods of forming the same

Номер патента: US20240096997A1. Автор: Sung-Li Wang,Po-Chin Chang,Pinyen Lin,Li-Zhen YU,Yuting CHENG,Lin-Yu HUANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-03-21.

Semiconductor device structure and methods of forming the same

Номер патента: US20230282519A1. Автор: Chih-Hao Wang,Kuo-Cheng Chiang,Shi-Ning Ju,Shang-Wen Chang,Kuan-Ting Pan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-09-07.

Substrate for epitaxial growth, method for manufacturing the same, semiconductor device including the same and method for manufacturing semiconductor device

Номер патента: US11978627B2. Автор: Binbin Li,Jiahao Zhang,Mingxin Chen,Bohsiang TSENG,Juiping LI,Yao Huo. Владелец: Fujian Jingan Optoelectronics Co Ltd. Дата публикации: 2024-05-07.

Semiconductor device structure and methods of forming the same

Номер патента: US20240063266A1. Автор: Yi-Bo Liao,Lin-Yu HUANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-02-22.

Method of detecting failure of a semiconductor device

Номер патента: US20190385918A1. Автор: ZHAN Zhan,Ji-Young Choi,Ju-Hyun Kim,Hwa-Sung Rhee,Sung-Gun Kang,Min-Seob KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-12-19.

Semiconductor device structure and methods of forming the same

Номер патента: US20230361184A1. Автор: Yi-Jen Chen,Chih-Teng Liao. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-09.

Semiconductor device structure and methods of forming the same

Номер патента: US20240154010A1. Автор: Yee-Chia Yeo,Huicheng Chang,Su-Hao LIU,Kuo-Ju Chen,Meng-Han Chou. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-05-09.

Thin-film semiconductor device, display apparatus, and method for manufacturing thin-film semiconductor device

Номер патента: US20130075745A1. Автор: Sadayoshi Hotta,Arinobu Kanegae. Владелец: Panasonic Corp. Дата публикации: 2013-03-28.

Semiconductor device including paired marks and method for manufacturing semiconductor device

Номер патента: US11581265B2. Автор: Takeshi Ito. Владелец: Kioxia Corp. Дата публикации: 2023-02-14.

Methods of fabricating a capacitor and semiconductor device

Номер патента: US20230107346A1. Автор: Hyunjun Kim,Yukyung Shin,Cheoljin Cho,Changhwa JUNG,Jongbeom SEO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-04-06.

Methods of forming ohmic contacts on semiconductor devices with trench/mesa structures

Номер патента: US20230420536A1. Автор: Sei-Hyung Ryu,Rahul R. Potera,Madankumar Sampath. Владелец: Wolfspeed Inc. Дата публикации: 2023-12-28.

Method of manufacturing polycrystalline silicon layer, display device, and method of manufacturing display device

Номер патента: US20200161389A1. Автор: SEO Jong Oh,Dong-Min Lee,Byung Soo SO,Dong-Sung Lee. Владелец: Samsung Display Co Ltd. Дата публикации: 2020-05-21.

Method of manufacturing polycrystalline silicon layer, display device, and method of manufacturing display device

Номер патента: US11164919B2. Автор: SEO Jong Oh,Dong-Min Lee,Byung Soo SO,Dong-Sung Lee. Владелец: Samsung Display Co Ltd. Дата публикации: 2021-11-02.

Semiconducting graphene structures, methods of forming such structures and semiconductor devices including such structures

Номер патента: WO2015017117A1. Автор: Roy E. Meade,Sumeet C. Pandey. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2015-02-05.

Method of producing a complementary-type semiconductor device

Номер патента: US5036019A. Автор: Yasushi Higuchi,Hiroyuki Yamane. Владелец: NipponDenso Co Ltd. Дата публикации: 1991-07-30.

Embedded semiconductor device package and method of manufacturing thereof

Номер патента: US09391027B2. Автор: Arun Virupaksha Gowda,Paul Alan McConnelee,Shakti Singh Chauhan. Владелец: General Electric Co. Дата публикации: 2016-07-12.

Semiconductor device, semiconductor device fabrication method, and electronic device

Номер патента: US20230275001A1. Автор: Kozo Makiyama,Toshihiro Ohki,Shirou Ozaki,Junya Yaita. Владелец: Fujitsu Ltd. Дата публикации: 2023-08-31.

Semiconductor device structures and methods of manufacturing the same

Номер патента: US20240243029A1. Автор: Hang Liao,Chunhua ZHOU,Qingyuan HE. Владелец: Innoscience Zhuhai Technology Co Ltd. Дата публикации: 2024-07-18.

Semiconductor device package and method of manufacturing the same

Номер патента: US20240282715A1. Автор: Wei-Hao Chang. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2024-08-22.

Ultra-thin embedded semiconductor device package and method of manufacturing thereof

Номер патента: US09806051B2. Автор: Arun Virupaksha Gowda,Paul Alan McConnelee,Shakti Singh Chauhan. Владелец: General Electric Co. Дата публикации: 2017-10-31.

GaN semiconductor device structure and method of fabrication by substrate replacement

Номер патента: US09818692B2. Автор: John Roberts,Greg P. KLOWAK,Cameron MCKNIGHT-MACNEIL. Владелец: GaN Systems Inc. Дата публикации: 2017-11-14.

Semiconductor device package and method of manufacturing the same

Номер патента: US09553072B2. Автор: Kuo-Feng Huang,Tau-Jing Yang,Wei Yu Nien. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2017-01-24.

Semiconductor device, electronic component, and electronic device including memory cell comprising first transistor, second transistor and capacitor

Номер патента: US09601429B2. Автор: Takanori Matsuzaki,Hiroki Inoue. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2017-03-21.

Semiconductor device, electronic component, and electronic device

Номер патента: WO2018087630A1. Автор: Takayuki Ikeda,Seiichi Yoneda. Владелец: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.. Дата публикации: 2018-05-17.

Semiconductor device, electronic component, and electronic device

Номер патента: US20180130539A1. Автор: Takayuki Ikeda,Seiichi Yoneda. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2018-05-10.

Semiconductor device, electronic component, and electronic device

Номер патента: US09729148B2. Автор: Atsuo Isobe,Hikaru Tamura,Naoaki Tsutsui. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2017-08-08.

Methods of forming group III-nitride semiconductor devices including implanting ions directly into source and drain regions and annealing to activate the implanted ions

Номер патента: US09711633B2. Автор: Sten Heikman,Scott T. Sheppard,Yifeng Wu,Matthew Jacob-Mitos,R. Peter Smith. Владелец: Cree Inc. Дата публикации: 2017-07-18.

Semiconductor device structures and methods of manufacturing the same

Номер патента: US11972996B2. Автор: Hang Liao,Chunhua ZHOU,Qingyuan HE. Владелец: Innoscience Zhuhai Technology Co Ltd. Дата публикации: 2024-04-30.

Semiconductor device package and method of manufacturing the same

Номер патента: US20210202413A1. Автор: Wen-Long Lu,Chi-Chang Lee. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2021-07-01.

Semiconductor device for and method of manufacturing the same

Номер патента: US3697334A. Автор: Hisashi Toki,Masayuki Yamamoto,Hideo Shibuya. Владелец: HITACHI LTD. Дата публикации: 1972-10-10.

Semiconductor device package and method of manufacturing the same

Номер патента: US20230327333A1. Автор: Shih-Wen Lu,Huei-Shyong CHO,Shao-En HSU. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2023-10-12.

Semiconductor device package and method of manufacturing the same

Номер патента: US20200403305A1. Автор: Shih-Wen Lu,Huei-Shyong CHO,Shao-En HSU. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2020-12-24.

Semiconductor device package and method of manufacturing the same

Номер патента: US20210280968A1. Автор: Shih-Wen Lu,Huei-Shyong CHO,Shao-En HSU. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2021-09-09.

Semiconductor device including crack detection structure and method of detecting progressive crack in semiconductor device

Номер патента: US20240222205A1. Автор: Sungho Park,Younggu KANG,Chulhee JEON,Inho LIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-04.

Adhesive composition, semiconductor device using the composition and method for producing a semiconductor device using the composition

Номер патента: US5844309A. Автор: Yukio Takigawa,Hiroyuki Ishiguro,Shigeaki Yagi,Masaaki Seki,Toshimi Kawahara,Shinya Nakaseko,Mitsunada Osawa,Takashi Hozumi. Владелец: Fujitsu Ltd. Дата публикации: 1998-12-01.

Temperature control device, semiconductor device including the same, and method for controlling the semiconductor device

Номер патента: US10032687B2. Автор: Young Geun Choi. Владелец: SK hynix Inc. Дата публикации: 2018-07-24.

Frequency adjustment method of vibrator element, vibrator element, vibrator, electronic device, and vehicle

Номер патента: US20190006575A1. Автор: Masahiro Oshio,Keiichi Yamaguchi,Seiichiro Ogura,Ryuta NISHIZAWA. Владелец: Seiko Epson Corp. Дата публикации: 2019-01-03.

Substrate for semiconductor devices, method of manufacturing substrate for semiconductor devices, and solid-state imaging device

Номер патента: US20150263212A1. Автор: Hideo Numata,Mokuji Kageyama,Shinji Uya,Nagataka Tanaka. Владелец: Toshiba Corp. Дата публикации: 2015-09-17.

Silicon carbide semiconductor device, method of manufacturing silicon carbide semiconductor device and method of designing silicon carbide semiconductor device

Номер патента: US09716168B2. Автор: Shunichi Nakamura,Akihiko Sugai,Tetsuto INOUE. Владелец: Shindengen Electric Manufacturing Co Ltd. Дата публикации: 2017-07-25.

Manufacturing apparatus of semiconductor device and management method of manufacturing apparatus of semiconductor device

Номер патента: US09958794B2. Автор: Eishi Shiobara. Владелец: Toshiba Corp. Дата публикации: 2018-05-01.

Field effect semiconductor devices and methods of manufacturing field effect semiconductor devices

Номер патента: US09450071B2. Автор: Jong-Seob Kim,In-jun Hwang,Jai-Kwang Shin,Jae-joon Oh,Hyuk-soon Choi,Ki-ha Hong,Ho-Jung Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-09-20.

Optoelectronic Semiconductor Device and Method of Manufacturing an Optoelectronic Semiconductor Device

Номер патента: US20190348568A1. Автор: Harald KÖNIG,Alfred Lell,Sven GERHARD,Jens Ebbecke,Clemens Vierheilig. Владелец: OSRAM Opto Semiconductors GmbH. Дата публикации: 2019-11-14.

Semiconductor device, manufacturing method, and electronic apparatus

Номер патента: US09647146B2. Автор: Taizo Takachi,Satoru Wakiyama. Владелец: Sony Corp. Дата публикации: 2017-05-09.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US11742392B2. Автор: Shingo Hayashi,Takumi Fujimoto. Владелец: Fuji Electric Co Ltd. Дата публикации: 2023-08-29.

Semiconductor device, display unit, method of manufacturing display unit, and electronic apparatus

Номер патента: US09935165B2. Автор: Yuichi Kato,Kenta Masuda,Takashige Fujimori,Keiichi Akamatsu,Tomoatsu Kinoshita,Yuichiro Ishiyama. Владелец: Joled Inc. Дата публикации: 2018-04-03.

Transistor, method of manufacturing the transistor, electronic device including transistor, and electronic apparatus including the transistor

Номер патента: US20240222524A1. Автор: Minsu Seol,Kyung-Eun Byun,Eunkyu Lee,JunYoung KWON. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-04.

Optical semiconductor device, optoelectronic device and method of manufacturing an optical semiconductor device

Номер патента: WO2023165869A1. Автор: Jens Hofrichter. Владелец: Ams-Osram Ag. Дата публикации: 2023-09-07.

Nanowire/nanosheet device with replaced spacer, method of manufacturing nanowire/nanosheet device with replaced spacer, and electronic apparatus

Номер патента: US20240347593A1. Автор: Huilong Zhu. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2024-10-17.

Methods of manufacturing capacitors for semiconductor devices

Номер патента: US09496328B2. Автор: Sun Ho Kim,Hyun Jun Kim,Young Geun Park,Se Hyoung Ahn,Chang Mu An,Bong Hyun Kim,Jong Bom Seo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-11-15.

Semiconductor device structures and methods of manufacturing the same

Номер патента: US12068391B2. Автор: King Yuen Wong,Anbang ZHANG. Владелец: Innoscience Suzhou Technology Co Ltd. Дата публикации: 2024-08-20.

Semiconductor device structures and methods of manufacturing the same

Номер патента: US20240371969A1. Автор: King Yuen Wong,Anbang ZHANG. Владелец: Innoscience Suzhou Technology Co Ltd. Дата публикации: 2024-11-07.

Method of wafer-scale integration of semiconductor devices and semiconductor device

Номер патента: US09608035B2. Автор: Franz Schrank,Cathal Cassidy,Joerg Siegert. Владелец: ams AG. Дата публикации: 2017-03-28.

Semiconductor device package assembly, semiconductor device assembly, and method of manufacturing semiconductor device

Номер патента: US09553242B2. Автор: Takaaki Kudo,Naofumi Ikenaga,Tetsu Urano. Владелец: Japan Aviation Electronics Industry Ltd. Дата публикации: 2017-01-24.

Semiconductor device, display apparatus, and electronic device

Номер патента: US20240257751A1. Автор: Yoshiyuki Kurokawa,Kouhei Toyotaka,Yuto Yakubo,Seiko Inoue. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2024-08-01.

Semiconductor device structure and method of manufacture thereof

Номер патента: WO2007072021A1. Автор: Arnab Basu,Max Robinson,Ben Cantwell,Andy Brinkman. Владелец: Durham Scientific Crystals Limited. Дата публикации: 2007-06-28.

Method of making a low noise semiconductor device comprising a screening measurement

Номер патента: US5683917A. Автор: Cuong Tran,Ralph Francis Trambarulo,Samuel Suresh Martin. Владелец: Lucent Technologies Inc. Дата публикации: 1997-11-04.

Semiconductor device arrangement, a method of analysing a performance of a functional circuit on a semiconductor device and a device analysis system

Номер патента: US09671456B2. Автор: Yoav Weizman,Shai Shperber,Jacob Fridburg. Владелец: NXP USA Inc. Дата публикации: 2017-06-06.

Semiconductor device package and method of manufacturing the same

Номер патента: US20240304606A1. Автор: Wei-Hao Chang. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2024-09-12.

Methods of forming conductive materials on semiconductor devices, and methods of forming electrical interconnects

Номер патента: US09768134B2. Автор: Anilkumar Chandolu,Kenneth N. Hagen. Владелец: Micron Technology Inc. Дата публикации: 2017-09-19.

Semiconductor device, semiconductor device manufacturing method, and electronic device

Номер патента: US20240213360A1. Автор: Naoya Okamoto,Naoki Hara,Yasuhiro Nakasha,Toshihiro Ohki,Shirou Ozaki,Yusuke Kumazaki. Владелец: Fujitsu Ltd. Дата публикации: 2024-06-27.

Semiconductor device, systems and methods of manufacture

Номер патента: US12029040B2. Автор: TAEKYUNG KIM,Seong Soon Cho,Sunghoi Hur,Kwang Soo SEOL,JinTae KANG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-02.

Semiconductor device package and method of manufacturing the same

Номер патента: US09722098B1. Автор: Kam Cheong Chung,Ahmad Zulmuhtasyim,Liang Peng Cheng,Lai Theng Chan. Владелец: ASE Electronics Malaysia Sdn Bhd. Дата публикации: 2017-08-01.

Semiconductor device, electronic component, and electronic device

Номер патента: US20210358530A1. Автор: Yoshiyuki Kurokawa,Shunpei Yamazaki. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2021-11-18.

Semiconductor device, fabrication method, and electronic device

Номер патента: EP3958295A1. Автор: Weibin Chen,Zilan Li,Shuxin Zhang. Владелец: Guangdong Zhineng Technology Co Ltd. Дата публикации: 2022-02-23.

Semiconductor device, electronic component, and electronic device

Номер патента: US11545203B2. Автор: Yoshiyuki Kurokawa,Shunpei Yamazaki. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2023-01-03.

Semiconductor device, electronic component, and electronic device

Номер патента: US20230139527A1. Автор: Yoshiyuki Kurokawa,Shunpei Yamazaki. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2023-05-04.

Semiconductor device, electronic component, and electronic device

Номер патента: US09780779B2. Автор: Keita Sato. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2017-10-03.

Method of determining colorability of a semiconductor device and system for implementing the same

Номер патента: US20190171789A1. Автор: Chin-Chang Hsu,Hsien-Hsin Sean LEE,Jian-Yi Li,Wen-Ju Yang,Li-Sheng Ke,Chung-Yun CHENG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2019-06-06.

Semiconductor device, semiconductor module, and electronic apparatus

Номер патента: US20240304694A1. Автор: Katsuhiko Takeuchi,Atsushi KURANOUCHI. Владелец: Sony Semiconductor Solutions Corp. Дата публикации: 2024-09-12.

Method of determining colorability of a semiconductor device and system for implementing the same

Номер патента: US20200117848A1. Автор: Chin-Chang Hsu,Hsien-Hsin Sean LEE,Jian-Yi Li,Wen-Ju Yang,Li-Sheng Ke,Chung-Yun CHENG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-04-16.

Method of determining colorability of a semiconductor device and system for implementing the same

Номер патента: US20170199957A1. Автор: Chin-Chang Hsu,Hsien-Hsin Sean LEE,Jian-Yi Li,Wen-Ju Yang,Li-Sheng Ke,Chung-Yun CHENG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-07-13.

Semiconductor device structure and methods of manufacturing the same

Номер патента: US20070166887A1. Автор: Hsueh-Chung Chen,Yi-Lung Cheng,Shin-puu Jeng,Hsien-Wei Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2007-07-19.

Semiconductor device, manufacturing method and electronic equipment

Номер патента: US12100759B2. Автор: Weibin Chen,Zilan Li,Shuxin Zhang. Владелец: Guangdong Zhineng Technology Co Ltd. Дата публикации: 2024-09-24.

Semiconductor device, semiconductor device manufacturing method, and electronic device

Номер патента: US20230317839A1. Автор: Naoya Okamoto,Naoki Hara,Toshihiro Ohki,Shirou Ozaki,Yusuke Kumazaki. Владелец: Fujitsu Ltd. Дата публикации: 2023-10-05.

Method of treating inorganic oxide film, electronic device substrate, method of manufacturing electronic device substrate, liquid crystal panel, and electronic apparatus

Номер патента: US20060231839A1. Автор: Koichi Terao,Yuji Shinohara. Владелец: Seiko Epson Corp. Дата публикации: 2006-10-19.

Method of treating inorganic oxide film, electronic device substrate, method of manufacturing electronic device substrate, liquid crystal panel, and electronic apparatus

Номер патента: US7632553B2. Автор: Koichi Terao,Yuji Shinohara. Владелец: Seiko Epson Corp. Дата публикации: 2009-12-15.

Semiconductor device, display system, and electronic device

Номер патента: US20180033696A1. Автор: Takashi Nakagawa,Yuki Okamoto. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2018-02-01.

Optoelectronic semiconductor device comprising an al-containing layer and method of manufacturing the optoelectronic semiconductor device

Номер патента: WO2024184358A1. Автор: Xiaojun Chen,Jong Ho Na,Noor Afifa MOHD HANAFIAH,Muhammad Esmed Alif SAMSUDIN,Azharul Ariff KAMARULZAMAN. Владелец: Ams-Osram International Gmbh. Дата публикации: 2024-09-12.

Semiconductor device, electronic component, and electronic device

Номер патента: US09711536B2. Автор: Hidekazu Miyairi,Hiroyuki Miyake,Kei Takahashi. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2017-07-18.

Organic transistor, compound, organic semiconductor material for non-light-emitting organic semiconductor device, material for organic transistor, coating solution for non-light-emitting organic semiconductor device, organic semiconductor film for non-light-emitting organic semiconductor device, and method for manufacturing organic semiconductor film for non-light emitting organic semiconductor device

Номер патента: US09705096B2. Автор: Yuki Hirai,Kensuke MASUI,Katsuyuki Youfu. Владелец: Fujifilm Corp. Дата публикации: 2017-07-11.

Epoxy resin composition for optical semiconductor device, and lead frame for optical semiconductor device, encapsulation type optical semiconductor element unit and optical semiconductor device each obtainable by using the epoxy resin composition

Номер патента: US09450158B2. Автор: Naoko Yoshida,Hidenori Onishi,Kazuhiro Fuke,Ryusuke Naito,Yuichi Fukamichi. Владелец: Nitto Denko Corp. Дата публикации: 2016-09-20.

Semiconductor device packages and methods of manufacturing the same

Номер патента: US20210074669A1. Автор: Min Lung Huang,Shun-Tsat TU,Pei-Jen LO,Fong Ren SIE,Cheng-En WENG. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2021-03-11.

Semiconductor device, electronic component, and electronic appliance

Номер патента: US09721968B2. Автор: Munehiro KOZUMA,Atsushi Miyaguchi. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2017-08-01.

Magnetic memory cells, methods of fabrication, semiconductor devices, memory systems, and electronic systems

Номер патента: US09461242B2. Автор: Gurtej S. Sandhu,Witold Kula. Владелец: Micron Technology Inc. Дата публикации: 2016-10-04.

Semiconductor device, electronic component, and electronic device

Номер патента: US09401364B2. Автор: Takayuki Ikeda,Yoshiyuki Kurokawa,Takeshi Aoki,Munehiro KOZUMA. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2016-07-26.

Semiconductor device, semiconductor wafer, and electronic device

Номер патента: US20170271516A1. Автор: Kiyoshi Kato,Tomoaki Atsumi,Tatsuya Onuki. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2017-09-21.

Semiconductor device, manufacturing method, and electronic apparatus

Номер патента: US20170186791A1. Автор: Taizo Takachi,Satoru Wakiyama. Владелец: Sony Corp. Дата публикации: 2017-06-29.

Semiconductor device, manufacturing method, and electronic apparatus

Номер патента: US20190013341A1. Автор: Taizo Takachi,Satoru Wakiyama. Владелец: Sony Corp. Дата публикации: 2019-01-10.

Semiconductor device, manufacturing method, and electronic apparatus

Номер патента: US10084003B2. Автор: Taizo Takachi,Satoru Wakiyama. Владелец: Sony Corp. Дата публикации: 2018-09-25.

Epoxy resin composition for optical semiconductor device, lead frame obtained using the same for optical semiconductor device, and optical semiconductor device

Номер патента: US20120080705A1. Автор: Shinya Ota,Kohei Nakamura,Kazuhiro Fuke,Hidenori Ohnishi. Владелец: Nitto Denko Corp. Дата публикации: 2012-04-05.

Semiconductor device structure and methods of forming the same

Номер патента: US20240266424A1. Автор: Hsu Ming Hsiao,Hsiu-Hao Tsao. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-08.

Semiconductor device, electronic component, and electronic device

Номер патента: US09917572B2. Автор: Yoshiyuki Kurokawa. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2018-03-13.

Semiconductor device, electronic component, and electronic device

Номер патента: US09747962B2. Автор: Shunpei Yamazaki,Tomoaki Atsumi,Shuhei Nagatsuka. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2017-08-29.

Semiconductor device, electronic component, and electronic device

Номер патента: US09666725B2. Автор: Takanori Matsuzaki,Tatsuya Onuki. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2017-05-30.

Semiconductor device, electronic component, and electronic device

Номер патента: US09553204B2. Автор: Takanori Matsuzaki,Tatsuya Onuki. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2017-01-24.

Semiconductor device, electronic component, and electronic device

Номер патента: US09438207B2. Автор: Yoshiyuki Kurokawa. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2016-09-06.

Semiconductor Device, Display Apparatus, and Electronic Device

Номер патента: US20240237435A1. Автор: Yoshiyuki Kurokawa,Hiromichi Godo,Kazuki Tsuda,Hidefumi Rikimaru,Satoru Ohshita. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2024-07-11.

Semiconductor device, display apparatus, and electronic device

Номер патента: US20240265882A1. Автор: Takanori Matsuzaki,Munehiro KOZUMA,Tatsuya Onuki,Minato ITO. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2024-08-08.

Semiconductor device structure and methods of forming the same

Номер патента: US20240274473A1. Автор: Huang-Lin Chao,Chung-Liang Cheng,Yao-Sheng Huang,Jung-Hung CHANG,I-Ming Chang,Hsiang-Pi Chang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-15.

Semiconductor device including transistor and electronic device surrounded by layer having assigned band gap to prevent electrostatic discharge damage

Номер патента: US09911756B2. Автор: Shunpei Yamazaki,Kiyoshi Kato,Shuhei Nagatsuka,Yuto Yakubo. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2018-03-06.

Semiconductor device structure and methods of forming the same

Номер патента: US20230197850A1. Автор: Chih-Hao Wang,Kuo-Cheng Chiang,Pei-Yu Wang,Cheng-Ting Chung,Kuan-Ting Pan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-06-22.

Metal film and manufacturing method of the metal film, and semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20230411320A1. Автор: Tadashi Yamaguchi. Владелец: Renesas Electronics Corp. Дата публикации: 2023-12-21.

Methods of forming 3-d integrated semiconductor devices having intermediate heat spreading capabilities

Номер патента: US20160190104A1. Автор: Thomas Werner,Frank Feustel,Michael Grillberger. Владелец: Globalfoundries Inc. Дата публикации: 2016-06-30.

Method of forming a semiconductor device structure using differing spacer widths and the resulting semiconductor device structure

Номер патента: US09876111B2. Автор: Juergen Faul,Thorsten Kammler,Steffen Sichler,Peter Javorka,Sylvain Henri Baudot. Владелец: Globalfoundries Inc. Дата публикации: 2018-01-23.

Semiconductor device structure and methods of forming the same

Номер патента: US12040329B2. Автор: Chih-Hao Wang,Kuo-Cheng Chiang,Kuan-Lun Cheng,Shi Ning Ju,Wen-Ting Lan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-16.

Method of wire bonding of a semiconductor device for resolving oxidation of copper bonding pad

Номер патента: US20040082174A1. Автор: Yu-Chun Huang,Ning Huang,Wen-Tsung Weng,Wen-Lo Shieh,Hui-Pin Chen,Fu-Yu Huang,Chia-Ling Lu,Chih-Yu Tsai,Shu-Wan Lu,Mei-Hua Chen,Yu-Ju Wang,Ya-Hsin Tseng,Zhe-Sung Wu,Tzu-Lin Liu. Владелец: Individual. Дата публикации: 2004-04-29.

Method of fabricating memory cell in semiconductor device

Номер патента: US20050189581A1. Автор: Tae Park. Владелец: DongbuAnam Semiconductor Inc. Дата публикации: 2005-09-01.

Semiconductor device structure and methods of forming the same

Номер патента: US20240339455A1. Автор: Chih-Hao Wang,Kuo-Cheng Chiang,Kuan-Lun Cheng,Shi Ning Ju,Wen-Ting Lan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-10.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20220254917A1. Автор: Masaki Miyazato,Yohei Kagoyama. Владелец: Fuji Electric Co Ltd. Дата публикации: 2022-08-11.

Semiconductor device, display panel, and electronic device

Номер патента: US20190362668A1. Автор: Kei Takahashi. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2019-11-28.

Method of producing a radiation sensor semiconductor device comprising a multiple colour filter

Номер патента: WO2014127988A1. Автор: Rainer Minixhofer. Владелец: ams AG. Дата публикации: 2014-08-28.

Semiconductor device, display apparatus, and electronic device

Номер патента: US20230298517A1. Автор: Takayuki Ikeda,Hajime Kimura. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2023-09-21.

Method of mounting semiconductor element, and semiconductor device

Номер патента: US09615464B2. Автор: Takashi Kubota,Hidehiko Kira,Masayuki Kitajima,Takatoyo Yamakami. Владелец: Fujitsu Ltd. Дата публикации: 2017-04-04.

Semiconductor device, display apparatus, method of manufacturing semiconductor device and method of manufacturing display apparatus

Номер патента: US20180076241A1. Автор: Kazushige Takechi. Владелец: Tianma Japan Ltd. Дата публикации: 2018-03-15.

Bonding wire for semiconductor device use and method of production of same

Номер патента: PH12015502710A1. Автор: Haibara Teruo,Uno Tomohiro,Yamada Takashi,Oda Daizo,OISHI Ryo. Владелец: Nippon Steel and Sumikin Materials Co Ltd. Дата публикации: 2016-03-14.

Bonding wire for semiconductor device use and method of production of same

Номер патента: US20160104687A1. Автор: Takashi Yamada,Tomohiro Uno,Daizo Oda,Teruo Haibara,Ryo Oishi. Владелец: Nippon Steel and Sumikin Materials Co Ltd. Дата публикации: 2016-04-14.

Gate spacers and methods of forming the same in semiconductor devices

Номер патента: US20240266224A1. Автор: Jhon Jhy Liaw,Chih-Yung Lin,Ta-Chun Lin,Kuo-Hua Pan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-08.

Method of producing a radiation sensor semiconductor device comprising a multiple color filter

Номер патента: US09837573B2. Автор: Rainer Minixhofer. Владелец: ams AG. Дата публикации: 2017-12-05.

Fabricating method of lateral-diffused metal oxide semiconductor device

Номер патента: US09780171B2. Автор: Ming-Shing Chen,Wei-Ting Wu,Ming-Hui Chang,Chao-Chun Ning. Владелец: United Microelectronics Corp. Дата публикации: 2017-10-03.

Bonding wire for semiconductor device use and method of production of same

Номер патента: US09536854B2. Автор: Takashi Yamada,Tomohiro Uno,Daizo Oda,Teruo Haibara,Ryo Oishi. Владелец: Nippon Micrometal Corp. Дата публикации: 2017-01-03.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20240063269A1. Автор: Akimasa Kinoshita. Владелец: Fuji Electric Co Ltd. Дата публикации: 2024-02-22.

Semiconductor device structures and methods of manufacturing the same

Номер патента: WO2024040563A1. Автор: Yi He,Jheng-Sheng You,Weixing DU. Владелец: Innoscience (suzhou) Semiconductor Co., Ltd.. Дата публикации: 2024-02-29.

Method of manufacturing method a semiconductor device, a semiconductor device manufactured using this method and a mosfet device manufactured according to the method

Номер патента: US20240162334A1. Автор: Kilian ONG,Aryadeep Mrinal,Dnyanesh Havaldar. Владелец: Nexperia BV. Дата публикации: 2024-05-16.

Semiconductor device structures and methods of manufacturing the same

Номер патента: WO2022051932A1. Автор: Chao Yang,Chunhua ZHOU,Qiyue Zhao. Владелец: Innoscience (Suzhou) Technology Co., Ltd.. Дата публикации: 2022-03-17.

Semiconductor device structures and methods of manufacturing the same

Номер патента: US11942560B2. Автор: Anbang ZHANG. Владелец: Innoscience Zhuhai Technology Co Ltd. Дата публикации: 2024-03-26.

Semiconductor device structures and methods of manufacturing the same

Номер патента: US11862722B2. Автор: Chao Yang,Chunhua ZHOU,Qiyue Zhao. Владелец: Innoscience Suzhou Technology Co Ltd. Дата публикации: 2024-01-02.

Semiconductor device structure and method of manufacturing the same

Номер патента: WO2024103247A1. Автор: Chang Chen,Xiaoming Liu,Xinyu Li. Владелец: Innoscience (suzhou) Semiconductor Co., Ltd.. Дата публикации: 2024-05-23.

Semiconductor device structures and methods of manufacturing the same

Номер патента: US12021121B2. Автор: Han-Chin Chiu. Владелец: Innoscience Zhuhai Technology Co Ltd. Дата публикации: 2024-06-25.

Semiconductor device structure and methods of forming the same

Номер патента: US20240120391A1. Автор: Chih-Hao Wang,Huan-Chieh Su,Chun-Yuan Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-04-11.

Semiconductor device structure and methods of forming the same

Номер патента: US12062693B2. Автор: Chih-Hao Wang,Chung-Wei Hsu,Mao-Lin Huang,Lung-Kun Chu,Jia-Ni YU,Kuo-Cheng Chiang,Kuan-Lun Cheng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-13.

Semiconductor device structure and methods of forming the same

Номер патента: US20240363687A1. Автор: Chih-Hao Wang,Chung-Wei Hsu,Mao-Lin Huang,Lung-Kun Chu,Jia-Ni YU,Kuo-Cheng Chiang,Kuan-Lun Cheng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-31.

Semiconductor device, semiconductor module, and electronic apparatus including process monitoring pattern overlapping with I/O pad

Номер патента: US20100102318A1. Автор: Dong-Hyun Han. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2010-04-29.

Memory cell, method of forming the same, and semiconductor device having the same

Номер патента: US20210328141A1. Автор: Tung-Ying Lee,Yu-Chao Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-10-21.

Method of manufacturing capacitors for semiconductor devices

Номер патента: US7163859B2. Автор: Dong-Woo Kim,Jae-hee Oh. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2007-01-16.

Semiconductor device, integrated circuit, and electronic device

Номер патента: EP4243079A1. Автор: Chunkun JIAO. Владелец: Huawei Digital Power Technologies Co Ltd. Дата публикации: 2023-09-13.

Semiconductor Device and a Method of Manufacturing of a Semiconductor Device

Номер патента: US20240079494A1. Автор: Manoj Kumar,Kilian ONG. Владелец: Nexperia BV. Дата публикации: 2024-03-07.

Method of manufacturing super-junction semiconductor device

Номер патента: US20110287598A1. Автор: Takayuki SHIMATOU. Владелец: Fuji Electric Co Ltd. Дата публикации: 2011-11-24.

A semiconductor device and a method of manufacturing of a semiconductor device

Номер патента: EP4333074A1. Автор: Manoj Kumar,Kilian ONG. Владелец: Nexperia BV. Дата публикации: 2024-03-06.

Semiconductor device structure and methods of forming the same

Номер патента: US12068370B2. Автор: Hou-Yu Chen,Kuan-Lun Cheng,Chi-Yi Chuang,Cheng-Ting Chung. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-20.

Method of manufacturing semiconductor light emitting device, and semiconductor light emitting device

Номер патента: US09537066B2. Автор: Yoshitaka Kadowaki. Владелец: Dowa Electronics Materials Co Ltd. Дата публикации: 2017-01-03.

Semiconductor device, semiconductor wafer, and electronic device

Номер патента: US20220236785A1. Автор: Shunpei Yamazaki,Tatsuya Onuki,Takahiko Ishizu,Hitoshi KUNITAKE. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2022-07-28.

Semiconductor device, semiconductor system, and electronic apparatus

Номер патента: US20180152018A1. Автор: Takanori Suzuki,Masanori Ogura,Takanori Watanabe,Toru Koizumi,Jun Iba. Владелец: Canon Inc. Дата публикации: 2018-05-31.

Semiconductor device, semiconductor system, and electronic apparatus

Номер патента: US10439389B2. Автор: Takanori Suzuki,Masanori Ogura,Takanori Watanabe,Toru Koizumi,Jun Iba. Владелец: Canon Inc. Дата публикации: 2019-10-08.

Method of manufacturing support structures for lighting devices and corresponding device

Номер патента: US20180062054A1. Автор: Lorenzo Baldo,Alessio Griffoni,Federico Poggi. Владелец: OSRAM GMBH. Дата публикации: 2018-03-01.

Semiconductor device package and method of manufacturing the same

Номер патента: US20160358862A1. Автор: Jaw-Ming Ding,Sung-Mao Li,Wei-Hsuan Lee,Chien-Yeh Liu. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2016-12-08.

Semiconductor device, electronic component, and electronic device

Номер патента: US20170040998A1. Автор: Keita Sato. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2017-02-09.

Semiconductor Device Including a Transistor Array and a Termination Region and Method of Manufacturing Such a Semiconductor Device

Номер патента: US20180026133A1. Автор: Till Schloesser,Andreas Peter Meiser. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2018-01-25.

Semiconductor device, memory circuit, method of manufacturing semiconductor device

Номер патента: US20160322422A1. Автор: Takashi Yokoyama,Taku Umebayashi. Владелец: Sony Corp. Дата публикации: 2016-11-03.

Semiconductor device, electronic component, and electronic device

Номер патента: US11942132B2. Автор: Yoshiyuki Kurokawa,Shunpei Yamazaki. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2024-03-26.

Semiconductor device, integrated circuit, and electronic device

Номер патента: US20230282690A1. Автор: Chunkun JIAO. Владелец: Huawei Digital Power Technologies Co Ltd. Дата публикации: 2023-09-07.

Method of manufacturing super-junction semiconductor device

Номер патента: US20110287617A1. Автор: Naoko Kodama. Владелец: Fuji Electric Co Ltd. Дата публикации: 2011-11-24.

Semiconductor device, semiconductor package comprising same, and method for producing semiconductor device

Номер патента: US20230096863A1. Автор: Akira Sagawa. Владелец: ROHM CO LTD. Дата публикации: 2023-03-30.

Semiconductor device, sensor, and method of manufacturing semiconductor device

Номер патента: US20240128424A1. Автор: Dai Miyazaki. Владелец: ROHM CO LTD. Дата публикации: 2024-04-18.

Semiconductor device, electronic component, and electronic device

Номер патента: US20210142836A1. Автор: Yoshiyuki Kurokawa,Shunpei Yamazaki. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2021-05-13.

Method of manufacturing integrated circuit semiconductor device

Номер патента: US4806457A. Автор: Masayuki Yanagisawa. Владелец: NEC Corp. Дата публикации: 1989-02-21.

Semiconductor device, electronic component, and electronic device

Номер патента: US20170053699A1. Автор: Yoshiyuki Kurokawa,Takeshi Aoki,Munehiro KOZUMA. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2017-02-23.

Method of controlling performance boosting of semiconductor device and semiconductor device performing the method

Номер патента: US20210057420A1. Автор: Sangkyu Kim,Jungwook Kim,Jonglae Park,Hyunju KANG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-02-25.

Semiconductor device, true random number generator, and method for fabricating semiconductor device

Номер патента: US20240256224A1. Автор: Xinyu Bao,Jeremy Guy,Elia Ambrosi. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-01.

Method of manufacturing radiation-emitting semiconductor devices

Номер патента: US5358897A. Автор: Adriaan Valster,Coen T. H. F. Liedenbaum. Владелец: US Philips Corp. Дата публикации: 1994-10-25.

Methods of manufacturing vertical channel semiconductor devices

Номер патента: US7781287B2. Автор: Dong-gun Park,Choong-ho Lee,Jae-Man Yoon,Seong-Goo Kim,Seung-Bae Park,Won-sok Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2010-08-24.

Semiconductor device packages and methods of manufacturing the same

Номер патента: US20190267417A1. Автор: Yu-Min Peng. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2019-08-29.

Method of preventing dielectric breakdown of semiconductor device and semiconductor device preventing dielectric breakdown

Номер патента: US20070253276A1. Автор: Tsuneo Ochi. Владелец: Kawasaki Microelectronics Inc. Дата публикации: 2007-11-01.

Method of manufacturing trench type semiconductor device

Номер патента: US20220157958A1. Автор: Jau-Yan Lin. Владелец: Advanced Power Electronics Corp USA. Дата публикации: 2022-05-19.

Semiconductor device, power conversion apparatus, and method for manufacturing semiconductor device

Номер патента: US20230253345A1. Автор: Akihiko Furukawa,Kohei Ebihara,Masanori Tsukuda,Fumihito MASUOKA. Владелец: Mitsubishi Electric Corp. Дата публикации: 2023-08-10.

Semiconductor Device, Semiconductor Wafer, and Electronic Device

Номер патента: US20210384355A1. Автор: Eri Sato,Tatsuya Onuki,Yuto Yakubo,Hitoshi KUNITAKI. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2021-12-09.

Semiconductor device, display module, and electronic device

Номер патента: US10068927B2. Автор: Atsushi Umezaki. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2018-09-04.

Semiconductor device, semiconductor wafer, and electronic device

Номер патента: US11935961B2. Автор: Eri Sato,Tatsuya Onuki,Yuto Yakubo,Hitoshi KUNITAKE. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2024-03-19.

Semiconductor Device, Semiconductor Wafer, and Electronic Device

Номер патента: US20240154040A1. Автор: Eri Sato,Tatsuya Onuki,Yuto Yakubo,Hitoshi KUNITAKE. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2024-05-09.

Semiconductor device package and method of manufacturing the same

Номер патента: US11997888B2. Автор: Sheng-Yu Chen,Chang-Lin Yeh,Ming-Hung Chen,Yung-I Yeh. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2024-05-28.

Semiconductor device package and method of manufacturing the same

Номер патента: US20210057572A1. Автор: Sheng-Yu Chen,Chang-Lin Yeh,Ming-Hung Chen,Yung-I Yeh. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2021-02-25.

Semiconductor device, electrooptical apparatus, and electronic system

Номер патента: US20090242890A1. Автор: Atsushi Miyazaki,Mitsutoshi Miyasaka. Владелец: Seiko Epson Corp. Дата публикации: 2009-10-01.

Semiconductor device, electronic component, and electronic device

Номер патента: US11854599B2. Автор: Shunpei Yamazaki,Tatsuya Onuki,Yuto Yakubo,Takahiko Ishizu. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2023-12-26.

Semiconductor device, electronic component, and electronic device

Номер патента: US20200388319A1. Автор: Shunpei Yamazaki,Tatsuya Onuki,Yuto Yakubo,Takahiko Ishizu. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2020-12-10.

Semiconductor device, display system, and electronic device

Номер патента: US20180090616A1. Автор: Takashi Nakagawa,Yoshiyuki Kurokawa,Munehiro KOZUMA. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2018-03-29.

Semiconductor device, electronic component, and electronic device

Номер патента: US20230110439A1. Автор: Shunpei Yamazaki,Tatsuya Onuki,Yuto Yakubo,Takahiko Ishizu. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2023-04-13.

Semiconductor device structure and methods of forming the same

Номер патента: US11901364B2. Автор: Chih-Hao Wang,Kuo-Cheng Chiang,Zhi-Chang Lin,Jung-Hung CHANG,Shih-Cheng Chen,Chien Ning Yao. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-02-13.

Semiconductor device, display apparatus, and electronic device

Номер патента: US20240030905A1. Автор: Shunpei Yamazaki,Hajime Kimura. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2024-01-25.

Semiconductor device structure and methods of forming the same

Номер патента: US20230012358A1. Автор: Jhon Jhy Liaw. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-01-12.

Semiconductor device structure and methods of forming the same

Номер патента: US20240153958A1. Автор: Chih-Hao Wang,Kuo-Cheng Chiang,Zhi-Chang Lin,Jung-Hung CHANG,Shih-Cheng Chen,Chien Ning Yao. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-05-09.

Semiconductor device package and method of manufacturing the same

Номер патента: US11756904B2. Автор: Cheng-Lin HO,Yu-Lin Shih,Yuanhao Yu,Shih-Chun Li. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2023-09-12.

Semiconductor device, display system, and electronic device

Номер патента: US20210297646A1. Автор: Shunpei Yamazaki,Yuji Iwaki. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2021-09-23.

Semiconductor device package and method of manufacturing the same

Номер патента: US20200140262A1. Автор: Hsun-Wei Chan,Ching-Han Huang,Yu-Hsuan Tsai. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2020-05-07.

Epoxy resin composition for optical semiconductor device, and lead frame for optical semiconductor device, encapsulation type optical semiconductor element unit and optical semiconductor device each obtainable by using the epoxy resin composition

Номер патента: US20160111611A1. Автор: Naoko Yoshida,Hidenori Onishi,Kazuhiro Fuke,Ryusuke Naito,Yuichi Fukamichi. Владелец: Nitto Denko Corp. Дата публикации: 2016-04-21.

System and method of determining pulse properties of semiconductor device

Номер патента: US7495456B2. Автор: Hideki Horii,Yong-ho Ha. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2009-02-24.

Semiconductor device structure and methods of forming the same

Номер патента: US20240072055A1. Автор: Cheng-Wei Chang,Shahaji B. More. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-02-29.

Semiconductor device structure and methods of forming the same

Номер патента: US20240120414A1. Автор: Chih-Hung Hsieh,Ta-Chun Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-04-11.

Semiconductor device structure and methods of forming the same

Номер патента: US11978674B2. Автор: Huang-Lin Chao,Chung-Liang Cheng,Yao-Sheng Huang,Jung-Hung CHANG,I-Ming Chang,Hsiang-Pi Chang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-05-07.

Semiconductor element mounting member, method of producing the same, and semiconductor device

Номер патента: US20120292769A1. Автор: Eiji Kamijo,Kouichi Takashima,Yoshifumi Aoi. Владелец: ALMT Corp. Дата публикации: 2012-11-22.

Process of manufacturing an x-ray imaging device and to an x-ray imaging device produced by such a process

Номер патента: US20230104959A1. Автор: Albert Jos Jan Marie van Breemen,Gerwin Hermanus Gelinck,Hylke Broer Akkerman,Jan-Laurens Pieter Jacobus Van der Steen,Auke Jisk Kronemeijer. Владелец: Nederlandse Organisatie voor Toegepast Natuurwetenschappelijk Onderzoek TNO. Дата публикации: 2023-04-06.

Process of manufacturing an x-ray imaging device and to an x-ray imaging device produced by such a process

Номер патента: EP4115450A1. Автор: Albert Jos Jan Marie van Breemen,Gerwin Hermanus Gelinck,Hylke Broer Akkerman,Jan-Laurens Pieter Jacobus Van der Steen,Auke Jisk Kronemeijer. Владелец: Nederlandse Organisatie voor Toegepast Natuurwetenschappelijk Onderzoek TNO. Дата публикации: 2023-01-11.

Methods of forming dielectric structures in semiconductor devices

Номер патента: WO2008054689A1. Автор: Leonard Forbes,Kie Y. Ahn. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2008-05-08.

Semiconductor device, manufacturing method thereof, and display device including the semiconductor device

Номер патента: US20210028014A1. Автор: Shunpei Yamazaki,Kenichi Okazaki,Junichi Koezuka,Yukinori Shima,Masami Jintyou. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2021-01-28.

Semiconductor device, manufacturing method thereof, and display device including the semiconductor device

Номер патента: US11437524B2. Автор: Shunpei Yamazaki,Kenichi Okazaki,Junichi Koezuka,Yasutaka Nakazawa. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2022-09-06.

Semiconductor device structure and methods of forming the same

Номер патента: US20230402521A1. Автор: Chen-Yu Tai,Chih-Chang Hung,Chun-Liang Lai,Tzu-Ging LIN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-12-14.

Semiconductor device, manufacturing method thereof, and display device including the semiconductor device

Номер патента: US11869981B2. Автор: Shunpei Yamazaki,Kenichi Okazaki,Junichi Koezuka,Yasutaka Nakazawa. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2024-01-09.

Semiconductor device structure and methods of forming the same

Номер патента: US20230290780A1. Автор: Chih-Hao Wang,Kuo-Cheng Chiang,Kuan-Lun Cheng,Shi Ning Ju,Wen-Ting Lan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-09-14.

Semiconductor device, its manufacturing method and substrate for manufacturing a semiconductor device

Номер патента: US20010013608A1. Автор: Toshimasa Kobayashi,Tsuyoshi Tojo. Владелец: Individual. Дата публикации: 2001-08-16.

Semiconductor device structure and methods of forming the same

Номер патента: US20220328482A1. Автор: Chih-Hao Wang,Kuo-Cheng Chiang,Kuan-Lun Cheng,Shi Ning Ju,Wen-Ting Lan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-10-13.

Semiconductor device structure and methods of forming the same

Номер патента: US20230413571A1. Автор: Zhiqiang Wu,Yu-Ming Lin,Chih-Yu Chang,Hung-Wei Li,Mauricio Manfrini,Ya-Yun Cheng,Wen-Ling LU,Yu-Chien Chiu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-12-21.

Gate spacers and methods of forming the same in semiconductor devices

Номер патента: US11967532B2. Автор: Jhon Jhy Liaw,Chih-Yung Lin,Ta-Chun Lin,Kuo-Hua Pan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-04-23.

Method of Fabricating Non-Volatile Memory Integrated Circuit Device and Non-Volatile Memory Integrated Circuit Device Fabricated Using the Same

Номер патента: US20080017915A1. Автор: Bo-Un Yoon,Chang-ki Hong,Jun-Yong Kim,Byoung-Ho Kwon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2008-01-24.

Method of making metal electrode of semiconductor device

Номер патента: US4293637A. Автор: Kenzo Hatada,Takao Kajiwara. Владелец: Matsushita Electric Industrial Co Ltd. Дата публикации: 1981-10-06.

Bonding wire for semiconductor device use and method of production of same

Номер патента: US9543266B2. Автор: Takashi Yamada,Tomohiro Uno,Daizo Oda,Teruo Haibara,Ryo Oishi. Владелец: Nippon Micrometal Corp. Дата публикации: 2017-01-10.

Semiconductor devices, transistors, and related methods for contacting metal oxide semiconductor devices

Номер патента: US11908913B2. Автор: Scott E. Sills,Durai Vishak Nirmal Ramaswamy,Ramanathan GANDHI. Владелец: Micron Technology Inc. Дата публикации: 2024-02-20.

Metallic structure for optical semiconductor device, method for producing the same, and optical semiconductor device using the same

Номер патента: US20220140213A1. Автор: Yasuo Kato,Kazuya Matsuda. Владелец: Nichia Corp. Дата публикации: 2022-05-05.

Semiconductor Device Including Charged Structure and Methods for Manufacturing A Semiconductor Device

Номер патента: US20130240986A1. Автор: Franz Hirler,Markus Zundel. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2013-09-19.

Metallic structure for optical semiconductor device, method for producing the same, and optical semiconductor device using the same

Номер патента: US20200105989A1. Автор: Yasuo Kato,Kazuya Matsuda. Владелец: Nichia Corp. Дата публикации: 2020-04-02.

Bonding wire for semiconductor device use and method of production of same

Номер патента: US20160111389A1. Автор: Takashi Yamada,Tomohiro Uno,Daizo Oda,Teruo Haibara,Ryo Oishi. Владелец: Nippon Steel and Sumikin Materials Co Ltd. Дата публикации: 2016-04-21.

Semiconductor device, power circuit, computer, and method for manufacturing semiconductor device

Номер патента: US20180026107A1. Автор: Tatsuo Shimizu,Hisashi Saito. Владелец: Toshiba Corp. Дата публикации: 2018-01-25.

Curable liquid composition, method of coating, inorganic substrate, and semiconductor device

Номер патента: EP2118175A2. Автор: Maki Itoh,Yukinari Harimoto,Elias Dimitris Katsoulis. Владелец: Dow Corning Toray Co Ltd. Дата публикации: 2009-11-18.

Method of fabricating non-volatile memory integrated circuit device and non-volatile memory integrated circuit device fabricated using the same

Номер патента: US20090159952A1. Автор: Bo-Un Yoon,Chang-ki Hong,Jun-Yong Kim,Byoung-Ho Kwon. Владелец: Individual. Дата публикации: 2009-06-25.

Method of forming a non-volatile resistance variable device, and non-volatile resistance variable device

Номер патента: US20040157416A1. Автор: John Moore,Terry Gilton. Владелец: Individual. Дата публикации: 2004-08-12.

Structure and method of power supply routing in semiconductor device

Номер патента: US20230369310A1. Автор: Shih-Wei Peng,Jiann-Tyng Tzeng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-16.

Semiconductor devices, transistors, and related methods for contacting metal oxide semiconductor devices

Номер патента: US20220254896A1. Автор: Scott E. Sills,Durai Vishak Nirmal Ramaswamy,Ramanathan GANDHI. Владелец: Micron Technology Inc. Дата публикации: 2022-08-11.

Fabricating method of trench-gate metal oxide semiconductor device

Номер патента: US20140094013A1. Автор: Kuan-Ling LIU,Shih-Yuan UENG. Владелец: United Microelectronics Corp. Дата публикации: 2014-04-03.

Memory cell, method of forming the same, and semiconductor device having the same

Номер патента: US20220255000A1. Автор: Tung-Ying Lee,Yu-Chao Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-08-11.

Semiconductor devices, transistors, and related methods for contacting metal oxide semiconductor devices

Номер патента: EP3676877A1. Автор: Scott E. Sills,Durai Vishak Nirmal Ramaswamy,Ramanathan GANDHI. Владелец: Micron Technology Inc. Дата публикации: 2020-07-08.

Methods of removing photoresist and fabricating semiconductor devices

Номер патента: US20070093031A1. Автор: Min-Chieh Yang,Wen-Hsien Huang,Jiunn-Hsing Liao. Владелец: United Microelectronics Corp. Дата публикации: 2007-04-26.

Semiconductor device structure and methods of forming the same

Номер патента: US20240105786A1. Автор: Chun-Sheng Liang,Hong-Chih Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-03-28.

Semiconductor device structure and method of formation thereof

Номер патента: US5554488A. Автор: Brian A. Rioux. Владелец: Northern Telecom Ltd. Дата публикации: 1996-09-10.

Semiconductor device structure and methods of forming the same

Номер патента: US11942478B2. Автор: Chih-Hao Wang,Kuo-Cheng Chiang,Jui-Chien Huang,Shi Ning Ju,Guan-Lin Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-03-26.

Semiconductor device structure and methods of forming the same

Номер патента: US20230387120A1. Автор: Chih-Hao Wang,Kuo-Cheng Chiang,Jui-Chien Huang,Shi Ning Ju,Guan-Lin Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-30.

Method of fabricating vertical structure compound semiconductor devices

Номер патента: US20060148115A1. Автор: Myung Yoo. Владелец: Supergate Technology USA Inc. Дата публикации: 2006-07-06.

Multifold micro emitting device, display apparatus having the same, method of manufacturing the multifold micro emitting device, and method of manufacturing the display apparatus

Номер патента: US20240162403A1. Автор: Dongho Kim,Dongkyun KIM,Junsik Hwang,Kyungwook Hwang,Joonyong Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-05-16.

Semiconductor device including different nitride regions improving characteristics of the semiconductor device

Номер патента: US11967641B2. Автор: Hiroshi Ono,Yosuke Kajiwara,Akira Mukai,Masahiko Kuraguchi,Daimotsu Kato,Aya SHINDOME. Владелец: Toshiba Electronic Devices and Storage Corp. Дата публикации: 2024-04-23.

Multifold micro emitting device, display apparatus having the same, method of manufacturing the multifold micro emitting device, and method of manufacturing the display apparatus

Номер патента: EP4372815A1. Автор: Dongho Kim,Dongkyun KIM,Junsik Hwang,Kyungwook Hwang,Joonyong Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-05-22.

Method of fabricating stretchable electronic device, stretchable electronic device, and stretchable display apparatus

Номер патента: WO2019205130A1. Автор: Yingsong XU. Владелец: CHENGDU BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.. Дата публикации: 2019-10-31.

Method of fabricating stretchable electronic device, stretchable electronic device, and stretchable display apparatus

Номер патента: US20210354435A1. Автор: Yingsong XU. Владелец: Chengdu BOE Optoelectronics Technology Co Ltd. Дата публикации: 2021-11-18.

Method of fabricating stretchable electronic device, stretchable electronic device, and stretchable display apparatus

Номер патента: EP3788653A1. Автор: Yingsong XU. Владелец: Chengdu BOE Optoelectronics Technology Co Ltd. Дата публикации: 2021-03-10.

Method of producing electrical component, electrical component production device, and photosensitive resist

Номер патента: US20110207048A1. Автор: Yuki ITOU. Владелец: Oki Semiconductor Co Ltd. Дата публикации: 2011-08-25.

Method of making a thin film semiconductor device

Номер патента: US5897344A. Автор: Satoshi Teramoto,Yasuhiko Takemura,Hongyong Zhang. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 1999-04-27.

Method of manufacturing an organic light-emitting device and an organic light-emitting device manufactured by using the same

Номер патента: US11430971B2. Автор: Jonghyeok Lee,Heunggyu KIM,Seungmook LEE. Владелец: Samsung Display Co Ltd. Дата публикации: 2022-08-30.

Method of manufacturing an organic light-emitting device and an organic light-emitting device manufactured by using the same

Номер патента: US20210280833A1. Автор: Jonghyeok Lee,Heunggyu KIM,Seungmook LEE. Владелец: Samsung Display Co Ltd. Дата публикации: 2021-09-09.

Method of alignment mark protection and semiconductor device formed thereby

Номер патента: US20110304006A1. Автор: Chih-Hao Huang,Chiao-Wen Yeh. Владелец: Macronix International Co Ltd. Дата публикации: 2011-12-15.

Process of manufacturing an x-ray imaging device and to an x-ray imaging device produced by such a process

Номер патента: WO2021177827A1. Автор: Albert Jos Jan Marie van Breemen,Gerwin Hermanus Gelinck,Hylke Broer Akkerman,Jan-Laurens Pieter Jacobus Van der Steen,Auke Jisk Kronemeijer. Владелец: Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO. Дата публикации: 2021-09-10.

Process of manufacturing an x-ray imaging device and to an x-ray imaging device produced by such a process

Номер патента: EP3876280A1. Автор: Albert Jos Jan Marie van Breemen,Gerwin Hermanus Gelinck,Hylke Broer Akkerman,Jan-Laurens Pieter Jacobus Van der Steen,Auke Jisk Kronemeijer. Владелец: Nederlandse Organisatie voor Toegepast Natuurwetenschappelijk Onderzoek TNO. Дата публикации: 2021-09-08.

Memristor device, method of fabricating thereof, synaptic device including memristor device and neuromorphic device including synaptic device

Номер патента: US20220045289A1. Автор: Sung Gap Im,Sung-Yool Choi,Sangsu Park,Sang Yoon Yang,Jungyeop OH. Владелец: Korea Advanced Institute of Science and Technology KAIST. Дата публикации: 2022-02-10.

Method for manufacturing semiconductor light-emitting device and semiconductor light-emitting device

Номер патента: US09905521B2. Автор: Toshifumi Watanabe,Kazuyoshi Taniguchi,Mamoru Yuasa,Kaori Tachibana. Владелец: Stanley Electric Co Ltd. Дата публикации: 2018-02-27.

Crystalline material, method of crystal manufacture, radiation detector, non-infringing device and visualization device

Номер патента: RU2666445C1. Автор: Акира ЙОСИКАВА,Кей КАМАДА,Сунсуке КУРОСАВА,Ясухиро СОДЗИ,Юуи ЙОКОТА,Юдзи ОХАСИ,Такахико ХОРИАЙ,Рикито МУРАКАМИ. Владелец: Си Энд Эй КОРПОРЕЙШН. Дата публикации: 2018-09-07.

Gate structure including multi-tunneling layer and method of fabricating the same, non-volatile memory device and method of fabricating the same

Номер патента: US20070114572A1. Автор: Byung Kim,Eun-kyung Lee,Kyung-Sang Cho,Woong-Chul Shin,Kwang-Soo Seol. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2007-05-24.

Method of fabricating non-volatile memory integrated circuit device and non-volatile memory integrated circuit device fabricated using the same

Номер патента: US7535052B2. Автор: Bo-Un Yoon,Chang-ki Hong,Jun-Yong Kim,Byoung-Ho Kwon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2009-05-19.

Method of varying gain of amplifying photoelectric conversion device and variable gain photoelectric conversion device

Номер патента: US20130240716A1. Автор: Hirofumi Watanabe,Yutaka Hayashi,Kazuhiro Yoneda,Katsuhiko Aisu,Toshitaka Ota,Takaaki Negoro,Yasushi Nagamune. Владелец: National Institute of Advanced Industrial Science and Technology AIST. Дата публикации: 2013-09-19.

I/O device, method for providing ESD protection for an I/O device and ESD protection device for an I/O device

Номер патента: US9545041B2. Автор: Da-Wei Lai,Taede Smedes. Владелец: NXP BV. Дата публикации: 2017-01-10.

Method of fabricating stretchable electronic device, stretchable electronic device, and stretchable display apparatus

Номер патента: US11958280B2. Автор: Yingsong XU. Владелец: Chengdu BOE Optoelectronics Technology Co Ltd. Дата публикации: 2024-04-16.

Method of producing iii nitride semiconductor light-emitting device and iii nitride semiconductor light-emitting device

Номер патента: US20170338378A1. Автор: Yasuhiro Watanabe,Takehiko Fujita. Владелец: Dowa Electronics Materials Co Ltd. Дата публикации: 2017-11-23.

Method for manufacturing semiconductor light-emitting device and semiconductor light-emitting device

Номер патента: US20160343927A1. Автор: Toshifumi Watanabe,Kazuyoshi Taniguchi,Mamoru Yuasa,Kaori Tachibana. Владелец: Stanley Electric Co Ltd. Дата публикации: 2016-11-24.

Substrate for semiconductor device, method of manufacturing substrate for semiconductor device, substrate for electro-optical device, electro-optical device, and electronic apparatus

Номер патента: TW200607077A. Автор: Minoru Moriwaki. Владелец: Seiko Epson Corp. Дата публикации: 2006-02-16.

Semiconductor device and method of manufacturing the same

Номер патента: US20240234557A1. Автор: Jeeeun YANG,Sangwook Kim,Minsu Seol,Kyung-Eun Byun,Eunkyu Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-11.

Semiconductor device and method of manufacturing the same

Номер патента: EP4401145A1. Автор: Jeeeun YANG,Sangwook Kim,Minsu Seol,Kyung-Eun Byun,Eunkyu Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-17.

Methods of cleaning a semiconductor device and methods of manufacturing a semiconductor device using the same

Номер патента: US20080124909A1. Автор: Keum-Joo Lee,Jin-Hye Bae,Dae-Keun Kang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2008-05-29.

Optical semiconductor device and method of manufacturing thereof

Номер патента: EP1812972A1. Автор: Yoshitsugu Dow Corning Toray Co. Ltd. MORITA,Tomoko Dow Corning Toray Co. Ltd. KATO. Владелец: Dow Corning Toray Co Ltd. Дата публикации: 2007-08-01.

Silicon carbide semiconductor substrate, method of manufacturing silicon carbide semiconductor substrate, silicon carbide semiconductor device, and method of manufacturing silicon carbide semiconductor device

Номер патента: US20240204051A1. Автор: Takeshi Tawara,Shinsuke Harada,Kensuke Takenaka. Владелец: Fuji Electric Co Ltd. Дата публикации: 2024-06-20.

Semiconductor device and method of manufacture

Номер патента: US20210091231A1. Автор: Vicente Calvo Alonso,Jouko LÅNG,Johnny Dahl. Владелец: Comptek Solutions Oy. Дата публикации: 2021-03-25.

Semiconductor device and method of manufacturing semiconductor device

Номер патента: US20170054000A1. Автор: Masanori Inoue,Yuji Kumagai,Shunji Takenoiri,Shuhei TATEMICHI. Владелец: Fuji Electric Co Ltd. Дата публикации: 2017-02-23.

Laser bonding apparatus, method of bonding semiconductor devices, and method of manufacturing semiconductor package

Номер патента: US10886248B2. Автор: Satoshi Inada,Jun-Su Lim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-01-05.

Method of manufacturing silicon carbide semiconductor device and silicon carbide semiconductor device

Номер патента: US20220393002A1. Автор: Takafumi Uchida. Владелец: Fuji Electric Co Ltd. Дата публикации: 2022-12-08.

Semiconductor device and method of manufacturing the same, power converter, three-phase motor system, automobile and railway vehicle

Номер патента: US10236370B2. Автор: Yuki Mori,Akio Shima. Владелец: HITACHI LTD. Дата публикации: 2019-03-19.

Nor-type memory device, method of manufacturing nor-type memory device, and electronic apparatus including memory device

Номер патента: US20230301100A1. Автор: Huilong Zhu. Владелец: Institure Of Microelectronics, Chinese Academy Of Sciences. Дата публикации: 2023-09-21.

Manufacturing method of semiconductor device

Номер патента: US20240054276A1. Автор: Joongwon Jeon,Subin KIM,Jaehyun KANG,Junsu Jeon,Byungmoo KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-02-15.

Packaging structure, semiconductor device, and electronic apparatus

Номер патента: EP3883131A1. Автор: Chen Sun,Wei Pang,Qingrui YANG,Menglun ZHANG. Владелец: ROFS Microsystem Tianjin Co Ltd. Дата публикации: 2021-09-22.

Optoelectronic semiconductor device and method of manufacturing an optoelectronic semiconductor device

Номер патента: WO2021144377A1. Автор: Peter Fuchs,Thomas Falck,Hubert Halbritter,Christian Lauer,Ann RUSSELL,Bruno Jentzsch. Владелец: OSRAM Opto Semiconductors GmbH. Дата публикации: 2021-07-22.

Optoelectronic semiconductor device and method of manufacturing an optoelectronic semiconductor device

Номер патента: US11757254B2. Автор: Peter Fuchs,Thomas Falck,Hubert Halbritter,Christian Lauer,Ann RUSSELL,Bruno Jentzsch. Владелец: OSRAM Opto Semiconductors GmbH. Дата публикации: 2023-09-12.

Method for creating detection data in electron beam application device, method for synthesizing image of object being irradiated, program, recording medium, and electron beam application device

Номер патента: EP4401109A1. Автор: Tomohiro Nishitani. Владелец: Photo Electron Soul Inc. Дата публикации: 2024-07-17.

Method of manufacturing cold cathode field emission device and method of manufacturing cold cathode field emission display

Номер патента: EP1073085A3. Автор: Ishiwata Mika. Владелец: Sony Corp. Дата публикации: 2003-04-09.

Semiconductor device, battery pack, method of controlling semiconductor device, and control programs

Номер патента: US20240044990A1. Автор: Gen NAGASHIMA. Владелец: Renesas Electronics Corp. Дата публикации: 2024-02-08.

Semiconductor device, battery pack, and electronic device

Номер патента: US20220190398A1. Автор: Takayuki Ikeda,Shunpei Yamazaki,Kei Takahashi,Takeshi Aoki,Munehiro KOZUMA. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2022-06-16.

Ceramic dielectric and method of manufacturing the same and ceramic electronic component and electronic device

Номер патента: US20200243262A1. Автор: Hyeon Cheol PARK,Chan Kwak,Daejin YANG,Myoung Pyo CHUN. Владелец: Korea Institute of Ceramic Engineering and Technology KICET. Дата публикации: 2020-07-30.

Method of manufacturing laminated metal foils for electrical radio and electronic devices

Номер патента: GB1215479A. Автор: . Владелец: Politechnika Slaska im Wincentego Pstrowskiego. Дата публикации: 1970-12-09.

Method of producing an electrode, electrode, dry coating composition, battery and electronic circuit

Номер патента: EP4331024A1. Автор: Joachim Spatz,Maximilian HACKNER,Daniel HOTZ. Владелец: Max Planck Gesellschaft zur Foerderung der Wissenschaften eV. Дата публикации: 2024-03-06.

Method of producing an electrode, electrode, dry coating composition, battery and electronic circuit

Номер патента: US20240274790A1. Автор: Joachim Spatz,Maximilian HACKNER,Daniel HOTZ. Владелец: Max Planck Gesellschaft zur Foerderung der Wissenschaften eV. Дата публикации: 2024-08-15.

Method of influencing a charged particle beam, multipole device, and charged particle beam apparatus

Номер патента: WO2022184387A3. Автор: Dieter Winkler,Benjamin John Cook,Bernd Wöllert. Владелец: ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH. Дата публикации: 2022-12-01.

Method of producing microrods for electron emitters, and associated microrods and electron emitters

Номер патента: EP4297060A2. Автор: Kun Liu,Chad Rue,Alan Stephen Bahm. Владелец: FEI Co. Дата публикации: 2023-12-27.

Method of producing microrods for electron emitters, and associated microrods and electron emitters

Номер патента: EP4297060A3. Автор: Kun Liu,Chad Rue,Alan Stephen Bahm. Владелец: FEI Co. Дата публикации: 2024-03-06.

Antenna device, method and program for controlling directivity of the antenna device, and communications apparatus

Номер патента: US20060181469A1. Автор: Shin Watanabe. Владелец: Individual. Дата публикации: 2006-08-17.

Method of evaluating analysis device, method of calibrating analysis device, analysis method, analysis device and non-transitory computer readable medium

Номер патента: US20220050080A1. Автор: Yukihiko KUDO. Владелец: Shimadzu Corp. Дата публикации: 2022-02-17.

Method of evaluating analysis device, method of calibrating analysis device, analysis method, analysis device and non-transitory computer readable medium

Номер патента: US11754526B2. Автор: Yukihiko KUDO. Владелец: Shimadzu Corp. Дата публикации: 2023-09-12.

Semiconductor light emitting element, driving method of semiconductor light emitting element, light emitting device, and optical pulse tester using light emitting device

Номер патента: US20120044481A1. Автор: Hiroshi Mori,Yasuaki Nagashima,Shintaro MORIMOTO. Владелец: Anritsu Corp. Дата публикации: 2012-02-23.

Method of influencing a charged particle beam, multipole device, and charged particle beam apparatus

Номер патента: US20220277921A1. Автор: Dieter Winkler,Benjamin John Cook,Bernd Woellert. Владелец: ICT Integrated Circuit Testing Gesellschaft fuer Halbleiterprueftechnik mbH. Дата публикации: 2022-09-01.

Method of influencing a charged particle beam, multipole device, and charged particle beam apparatus

Номер патента: EP4302318A2. Автор: Dieter Winkler,Benjamin John Cook,Bernd Wöllert. Владелец: ICT Integrated Circuit Testing Gesellschaft fuer Halbleiterprueftechnik mbH. Дата публикации: 2024-01-10.

Protection device having a sleeve and method of assembling a battery with a protection device and an electrical component

Номер патента: CA2346221C. Автор: Robert Zayatz. Владелец: Greatbatch Ltd. Дата публикации: 2008-12-23.

Semiconductor device, method of manufacturing semiconductor device, solid-state image pickup unit, and electronic apparatus

Номер патента: US09490441B2. Автор: Kaori Takimoto. Владелец: Sony Corp. Дата публикации: 2016-11-08.

Trench mosfet with depleted gate shield and method of manufacture

Номер патента: US20170179277A1. Автор: Patrick M. Shea. Владелец: Great Wall Semiconductor Corp. Дата публикации: 2017-06-22.

Semiconductor apparatus, solid-state image pickup device, image pickup apparatus, and electronic apparatus

Номер патента: US20170323917A1. Автор: Satoru Wakiyama. Владелец: Sony Corp. Дата публикации: 2017-11-09.

Solid state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus

Номер патента: US09496303B2. Автор: Ryoji Suzuki. Владелец: Sony Corp. Дата публикации: 2016-11-15.

Method of manufacturing semiconductor device and semiconductor device

Номер патента: NL2018616B1. Автор: OHTANI Kinya. Владелец: Shindengen Electric Mfg. Дата публикации: 2018-02-01.

Semiconductor device and manufacturing method thereof and electronic apparatus including the same

Номер патента: US20230282743A1. Автор: Huilong Zhu. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2023-09-07.

Compound semiconductor device and method of manufacturing compound semiconductor device

Номер патента: US20230036228A1. Автор: Yoshikazu Motoyama,Akito Iwao. Владелец: Sony Semiconductor Solutions Corp. Дата публикации: 2023-02-02.

Semiconductor device and manufacturing method thereof and electronic apparatus including the same

Номер патента: US12068413B2. Автор: Huilong Zhu. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2024-08-20.

Solid-state imaging device, method of manufacturing the same, and electronic apparatus

Номер патента: US09947703B2. Автор: Atsushi Toda,Yusuke Otake,Toshifumi Wakano,Yuko Ohgishi,Kenji Azami. Владелец: Sony Semiconductor Solutions Corp. Дата публикации: 2018-04-17.

Method of manufacturing thin film semiconductor device, thin film semiconductor device, electro-optical device, and electronic apparatus

Номер патента: TWI294688B. Автор: Tsukasa Eguchi,Hiroshi Sera. Владелец: Seiko Epson Corp. Дата публикации: 2008-03-11.

Methods of manufacturing phase-change memory device and semiconductor device

Номер патента: US20130102120A1. Автор: Hye Jin Seo,Keum Bum Lee. Владелец: Hynix Semiconductor Inc. Дата публикации: 2013-04-25.

Method of manufacturing optical semiconductor device and optical semiconductor device

Номер патента: US12113155B2. Автор: Takashi Araki,Tsukasa Maruyama,Takehiro Miyaji. Владелец: Dowa Electronics Materials Co Ltd. Дата публикации: 2024-10-08.

Semiconductor device and method of manufacturing the same

Номер патента: US09812534B2. Автор: Naiqian Zhang,Fengli PEI. Владелец: Dynax Semiconductor Inc. Дата публикации: 2017-11-07.

Superjunction semiconductor device and method of manufacturing same

Номер патента: US20230223436A1. Автор: Myeong Bum PYUN,Min Gi JO,Jin Young Goh. Владелец: DB HiTek Co Ltd. Дата публикации: 2023-07-13.

Method of manufacturing a semiconductor device and liquid crystal display

Номер патента: US20030155571A1. Автор: Ichiro Murai,Masami Hayashi. Владелец: Mitsubishi Electric Corp. Дата публикации: 2003-08-21.

Semiconductor module and method of manufacturing semiconductor module

Номер патента: US20240014156A1. Автор: Yasuaki Hozumi. Владелец: Fuji Electric Co Ltd. Дата публикации: 2024-01-11.

Semiconductor module and method of manufacturing semiconductor module

Номер патента: US12062630B2. Автор: Yasuaki Hozumi. Владелец: Fuji Electric Co Ltd. Дата публикации: 2024-08-13.

Memory device, method of forming the same, and semiconductor device having the same

Номер патента: US11737287B2. Автор: Yu-Chao Lin,Jung-Piao Chiu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-08-22.

Packaging structure and semiconductor device having same, and electronic apparatus having semiconductor device

Номер патента: EP3869579A1. Автор: Wei Pang,Qingrui YANG,Menglun ZHANG,Chongling SUN. Владелец: ROFS Microsystem Tianjin Co Ltd. Дата публикации: 2021-08-25.

Semiconductor device, memory system and electronic apparatus

Номер патента: US20020135021A1. Автор: Kunio Watanabe,Junichi Karasawa. Владелец: Seiko Epson Corp. Дата публикации: 2002-09-26.

Semiconductor device, memory system and electronic apparatus

Номер патента: US20020135003A1. Автор: Kunio Watanabe,Junichi Karasawa. Владелец: Seiko Epson Corp. Дата публикации: 2002-09-26.

Multi-bit flip-flop region with serpentine data flow path, semiconductor device including same, method of operating same and method of manufacturing same

Номер патента: US20240256750A1. Автор: Hui-Zhong ZHUANG,Chih-Liang Chen,Wei-Hsiang Ma,Chih-Cheng Chuang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-01.

Semiconductor device, electronic component, and electronic device

Номер патента: US09876499B2. Автор: Takayuki Ikeda,Yoshiyuki Kurokawa,Takeshi Aoki,Yuki Okamoto,Munehiro KOZUMA. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2018-01-23.

Semiconductor device, electronic component, and electronic device

Номер патента: US09461646B2. Автор: Takayuki Ikeda,Yoshiyuki Kurokawa,Takeshi Aoki,Yuki Okamoto,Munehiro KOZUMA. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2016-10-04.

Semiconductor device, display panel and electronic apparatus

Номер патента: US20150097824A1. Автор: Seiichiro Jinta. Владелец: Sony Corp. Дата публикации: 2015-04-09.

Semiconductor device, display panel and electronic apparatus

Номер патента: US09792859B2. Автор: Seiichiro Jinta. Владелец: Sony Corp. Дата публикации: 2017-10-17.

Semiconductor device, display panel and electronic apparatus

Номер патента: US09396703B2. Автор: Seiichiro Jinta. Владелец: Sony Corp. Дата публикации: 2016-07-19.

Method of transmitting and receiving data of electronic device and electronic device using the method

Номер патента: US09756674B2. Автор: Donghyun Yeom,Jongwoo LEE,Jusung NOH,Seokjoong LEE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-09-05.

Method of analyzing lattice strain of semiconductor device

Номер патента: US10410332B2. Автор: Gwang-Seon Byun,Myoung-Ki Ahn,Han-Saem Park,Hyun-koo KWAK,Su-Bong Shon,Ung-Keun Cho. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-09-10.

Method of analyzing lattice strain of semiconductor device

Номер патента: US20180012348A1. Автор: Gwang-Seon Byun,Myoung-Ki Ahn,Han-Saem Park,Hyun-koo KWAK,Su-Bong Shon,Ung-Keun Cho. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-01-11.

Method of sharing contents by using personal cloud device, and electronic device and personal cloud system

Номер патента: US09813478B2. Автор: Bon-Hyun Koo,Kyoung-Lae NOH,Su-byeong Oh,Ki-Eun SHIN. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-11-07.

Memory cell, method of forming the same, and semiconductor device having the same

Номер патента: US11864477B2. Автор: Tung-Ying Lee,Yu-Chao Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-01-02.

Stream generating device, method for calculating input buffer padding level inside the device and stream control method

Номер патента: US20110185080A1. Автор: Gaël MARTIN. Владелец: Enensys Technologies SA. Дата публикации: 2011-07-28.

Semiconductor device, display panel and electronic apparatus

Номер патента: US20160307515A1. Автор: Seiichiro Jinta. Владелец: Sony Corp. Дата публикации: 2016-10-20.

Methods of controlling access to keys and of obscuring information and electronic devices

Номер патента: EP3501138A1. Автор: Martin John Thompson,Ian Richard Alan Hawkes. Владелец: TRW Ltd. Дата публикации: 2019-06-26.

Methods of controlling access to keys and of obscuring information and electronic devices

Номер патента: WO2018033750A1. Автор: Martin John Thompson,Ian Richard Alan Hawkes. Владелец: TRW LIMITED. Дата публикации: 2018-02-22.

Semiconductor device, broadcasting system, and electronic device

Номер патента: US20180109835A1. Автор: Munehiro KOZUMA. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2018-04-19.

Organic semiconductor structure, manufacturing method of the same, and organic semiconductor device

Номер патента: US20060113526A1. Автор: Hiroki Maeda,Junichi Hanna,Hiroaki Iino. Владелец: DAI NIPPON PRINTING CO LTD. Дата публикации: 2006-06-01.

Memory cells, methods of fabrication, semiconductor devices, memory systems, and electronic systems

Номер патента: EP3044816A1. Автор: Gurtej S. Sandhu,Witold Kula. Владелец: Micron Technology Inc. Дата публикации: 2016-07-20.

Semiconductor device, display panel, and electronic device

Номер патента: US20170256207A1. Автор: Kei Takahashi. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2017-09-07.

Method of manufacturing organic el panel, organic el panel, and electronic apparatus

Номер патента: US20090253336A1. Автор: Shotaro Watanabe,Masaki Ito. Владелец: Seiko Epson Corp. Дата публикации: 2009-10-08.

Mask and method of manufacturing the same, electro-luminescence device and method of manufacturing the same, and electronic instrument

Номер патента: US6720236B2. Автор: Shinichi Yotsuya. Владелец: Seiko Epson Corp. Дата публикации: 2004-04-13.

Semiconductor device, display apparatus, imaging apparatus, electronic apparatus, illumination apparatus, moving object, and photoelectric conversion apparatus

Номер патента: US11839131B2. Автор: Hiroaki Sano,Tetsuo Takahashi,Daisuke Okabayashi. Владелец: Canon Inc. Дата публикации: 2023-12-05.

Semiconductor device, display apparatus, imaging apparatus, electronic apparatus, illumination apparatus, moving object, and photoelectric conversion apparatus

Номер патента: EP3787032A3. Автор: Hiroaki Sano,Tetsuo Takahashi,Daisuke Okabayashi. Владелец: Canon Inc. Дата публикации: 2021-03-17.

Semiconductor device, display apparatus, and electronic device

Номер патента: US20240144879A1. Автор: Kazunori Watanabe,Susumu Kawashima,Satoshi Yoshimoto,Tomoaki Atsumi,Koji KUSUNOKI. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2024-05-02.

Method of returning channel state information, a terminal device and a network device

Номер патента: RU2720178C1. Автор: Е Ян,Байлун СУ. Владелец: Хуавэй Текнолоджиз Ко., Лтд.. Дата публикации: 2020-04-27.

Method of processing information on emergency signals, corresponding device and system

Номер патента: RU2712438C2. Автор: Шаньшань ВАН,Цзянь Чжу,Лан ЧЖОУ,Биньгли ЧЖИ,Вэньюн ХАНЬ. Владелец: Хуавей Текнолоджиз Ко., Лтд.. Дата публикации: 2020-01-28.

System and method of managing data communication at portable computing device and portable computing device docking station

Номер патента: RU2503986C2. Автор: Томас Кевин КОЛЛОПИ,Манджит Сингх ДЖИЛЛ,Рональд Дж. ТЕССИТОР. Владелец: Квэлкомм Инкорпорейтед. Дата публикации: 2014-01-10.

Method of managing electronic circuit including thermal protection device and corresponding electronic circuit

Номер патента: RU2672568C2. Автор: Анжело ПАСКАЛЕТТО,Жан-Мари КЭНТЭН. Владелец: Континенталь Отомотив Франс. Дата публикации: 2018-11-16.

Method of transmitting and receiving control information, communication device and system

Номер патента: RU2573748C2. Автор: Лэй ВАНЬ,Ян ЛИ,Ша МА,Чаоцзюнь ЛИ,Чжиюй ЯНЬ,Сяотао ЖЭНЬ. Владелец: Хуавэй Текнолоджиз Ко., Лтд.. Дата публикации: 2016-01-27.

Method of transmitting and receiving control information, communication device and system

Номер патента: RU2514089C2. Автор: Лэй ВАНЬ,Ян ЛИ,Ша МА,Чаоцзюнь ЛИ,Чжиюй ЯНЬ,Сяотао ЖЭНЬ. Владелец: Хуавэй Текнолоджиз Ко., Лтд.. Дата публикации: 2014-04-27.

Communication method of electronic shelf label system, system, computer device and storage medium

Номер патента: CA3234986A1. Автор: Min Liang,YAPING Ji,QI JIANG,Yujing WANG,Ju Zhang,Guofeng Zhang,Gengfeng Chen. Владелец: Hanshow Technology Co Ltd. Дата публикации: 2024-06-17.

Memory cell, method of forming the same, and semiconductor device having the same

Номер патента: US20240090354A1. Автор: Tung-Ying Lee,Yu-Chao Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-03-14.

Semiconductor device structure and methods of forming the same

Номер патента: US20240147685A1. Автор: Chun-Sheng Liang,Wen-Li Chiu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-05-02.

Method of operating an electronic lock locking a community asset, and electronic lock system

Номер патента: EP4305861A1. Автор: Michel Lessard,Xiao Qiang Zhou,Farnaz ABBASI,Alberto PALOMAR ROBLEDO. Владелец: Dormakaba Canada Inc. Дата публикации: 2024-01-17.

Methods of correcting data errors and semiconductor devices used therein

Номер патента: US20170371746A1. Автор: Chang Hyun Kim. Владелец: SK hynix Inc. Дата публикации: 2017-12-28.

Method of operating an electronic lock locking a community asset, and electronic lock system

Номер патента: US20240141695A1. Автор: Michel Lessard,Xiao Qiang Zhou,Farnaz ABBASI,Alberto PALOMAR ROBLEDO. Владелец: Dormakaba Canada Inc. Дата публикации: 2024-05-02.

Method of operating an electronic lock locking a community asset, and electronic lock system

Номер патента: CA3212283A1. Автор: Michel Lessard,Xiao Qiang Zhou,Farnaz ABBASI,Alberto PALOMAR ROBLEDO. Владелец: Dormakaba Canada Inc. Дата публикации: 2022-09-15.

Method of operating nonvolatile memory device, nonvolatile memory device and memory controller performing the same

Номер патента: US12033706B2. Автор: Byungchul Jang,Joonsung Lim,Junyeong Seok,Younggul SONG,Eunchu Oh. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-09.

Display method, method of training semantic unit detection model, electronic device, and storage medium

Номер патента: US20220391594A1. Автор: ZHI Li,Hua Wu,Haifeng Wang,Zhanyi Liu,Chuanqiang Zhang,Ruiqing Zhang,Zhongjun He,Shuangshuang Cui,Xing Wan,Jingxuan Zhao,Fengtao HUANG,Yongzheng Xin. Владелец: Beijing Baidu Netcom Science And Technology Co Ltd. Дата публикации: 2022-12-08.

Method of operating nonvolatile memory device, nonvolatile memory device and memory controller performing the same

Номер патента: US20240311011A1. Автор: Eun Chu Oh,Byungchul Jang,Joonsung Lim,Junyeong Seok,Younggul SONG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-09-19.

Method of inputting user input by using mobile device, and mobile device using the method

Номер патента: US09507439B2. Автор: Joon-kyu Seo,Ji-yeon Kwak,Young-Joon Choi,Yong-yeon Lee,Yeo-jun Yoon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-11-29.

Method of setting driver program of image processing device and image processing system with transparent function

Номер патента: US20130239035A1. Автор: Yang-moon Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2013-09-12.

Frequency Adjustment Method Of Vibration Element, Manufacturing Method Of Vibration Element, Vibration Element, Physical Quantity Sensor, Inertial Measurement Device, Electronic Apparatus, Vehicle

Номер патента: US20190301869A1. Автор: Masahiro Oshio,Shogo Sasaki,Keiichi Yamaguchi,Seiichiro Ogura,Masashi SHIMURA,Ryuta NISHIZAWA. Владелец: Seiko Epson Corp. Дата публикации: 2019-10-03.

A method of controlling a lighting emitting diode lighting device and a light emitting diode, led, based lighting device

Номер патента: EP4162770A1. Автор: Berend Jan Willem Ter Weeme,Aldegonda Lucia Weijers,Vincent Arnoud Wouters. Владелец: Signify Holding BV. Дата публикации: 2023-04-12.

Method of inputting user input by using mobile device, and mobile device using the method

Номер патента: US09916016B2. Автор: Joon-kyu Seo,Ji-yeon Kwak,Young-Joon Choi,Yong-yeon Lee,Yeo-jun Yoon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-03-13.

Method of manufacturing and testing an electronic device, and an electronic device

Номер патента: US6104280A. Автор: Mark E. Tuttle,Rickie C. Lake,Curtis M. Medlen. Владелец: Micron Technology Inc. Дата публикации: 2000-08-15.

Methods of controlling access to keys and of obscuring information and electronic devices

Номер патента: US20190213340A1. Автор: Martin John Thompson,Ian Richard Alan Hawkes. Владелец: TRW Ltd. Дата публикации: 2019-07-11.

Method of transmitting information in unlicensed band, network device, and terminal

Номер патента: US20200163117A1. Автор: Xueming PAN,Lei Jiang. Владелец: Vivo Mobile Communication Co Ltd. Дата публикации: 2020-05-21.

Method of switching video sequences and corresponding switching device and decoding system

Номер патента: US20020097801A1. Автор: Francois Martin. Владелец: US Philips Corp. Дата публикации: 2002-07-25.

Method of Handling Capability Information of a Mobile Device and Related Communication Device

Номер патента: US20120008557A1. Автор: Chih-Hsiang Wu. Владелец: HTC Corp. Дата публикации: 2012-01-12.

Method of editing call history information in mobile device and mobile device controlling the same

Номер патента: US09954998B2. Автор: Sijeong Ro. Владелец: LG ELECTRONICS INC. Дата публикации: 2018-04-24.

Methods of wireless communication between a terminal computing device and portable computing device

Номер патента: RU2617444C1. Автор: Андрей БЕЛОГОЛОВЫЙ. Владелец: Интел Корпорейшн. Дата публикации: 2017-04-25.

Method of measuring trench depth of semiconductor device

Номер патента: US6500683B1. Автор: Masakazu Nakabayashi,Tadayuki Yoshiyama. Владелец: Mitsubishi Electric Corp. Дата публикации: 2002-12-31.

Method of fabrication of an amorphous semiconductor device on a substrate

Номер патента: US4167806A. Автор: Pierre Kumurdjian. Владелец: Commissariat a lEnergie Atomique CEA. Дата публикации: 1979-09-18.

Method of safe data transfer on peer-to-peer principle and electronic module to implement this method

Номер патента: RU2329613C2. Автор: Кристоф НИКОЛЯ. Владелец: Награкард С.А.. Дата публикации: 2008-07-20.

Method of repeatedly transmitting uplink signals in wireless communication system and electronic device theref

Номер патента: US20240073825A1. Автор: Hyunseok Yu,Byongok Lee,Joohyun DO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-02-29.

Method of shutting down cell, terminal device, network device, and storage medium

Номер патента: US20240244500A1. Автор: Haitao Li,Yi Hu. Владелец: GUANGDONG OPPO MOBILE TELECOMMUNICATIONS CORP LTD. Дата публикации: 2024-07-18.

Methods of generating tactile user feedback utilizing headphone devices and related systems

Номер патента: US09712907B2. Автор: Matthew WINDT,John Timothy,Sam NOERTKER. Владелец: Skullcandy Inc. Дата публикации: 2017-07-18.

Method of transmitting a pilot signal, a terminal device and a network device

Номер патента: RU2713430C1. Автор: Хай ТАН. Владелец: Гуандун Оппо Мобайл Телекоммьюникейшнз Корп., Лтд.. Дата публикации: 2020-02-05.

Quantum dot, method of preparing quantum dot, optical member including quantum dot, and electronic device including quantum dot

Номер патента: US11802239B2. Автор: Changhee Lee,Heesun Yang,Jungho Jo,Sungwoon KIM,Yunhyuk KO,Kyunghye KIM. Владелец: Industry Academic Cooperation Foundation of Hongik University. Дата публикации: 2023-10-31.

Method of establishing control relationships, configuration device, networked device and computer program product

Номер патента: US09774637B2. Автор: Timo Van Roermund,Aly Aamer Syed,Ewout Brandsma,Maarten Christiaan Pennings. Владелец: NXP BV. Дата публикации: 2017-09-26.

Memristor device, method of fabricating thereof, synaptic device including memristor device and neuromorphic device including synaptic device

Номер патента: US20230422530A1. Автор: Sung Gap Im,Sung-Yool Choi,Sangsu Park,Sang Yoon Yang,Jungyeop OH. Владелец: Korea Advanced Institute of Science and Technology KAIST. Дата публикации: 2023-12-28.

Method of transfer of organic semiconductor films to a substrate and electronic devices made therefrom

Номер патента: EP4315445A1. Автор: Antony George,Andrey Turchanin,Bert Nickel,Sirri Batuhan KALKAN. Владелец: Friedrich Schiller Universtaet Jena FSU. Дата публикации: 2024-02-07.

Memristor device, method of fabricating thereof, synaptic device including memristor device and neuromorphic device including synaptic device

Номер патента: US11793006B2. Автор: Sung Gap Im,Sung-Yool Choi,Sangsu Park,Sang Yoon Yang,Jungyeop OH. Владелец: Korea Advanced Institute of Science and Technology KAIST. Дата публикации: 2023-10-17.

Method of transfer of organic semiconductor films to a substrate and electronic devices made therefrom

Номер патента: US20240164199A1. Автор: Antony George,Andrey Turchanin,Bert Nickel,Sirri Batuhan KALKAN. Владелец: Friedrich Schiller Universtaet Jena FSU. Дата публикации: 2024-05-16.

Cooling device and method for electronic apparatus

Номер патента: EP1684565A1. Автор: Matti Kauranen,Mika Silvennoinen,Mika Sares. Владелец: ABB Oy. Дата публикации: 2006-07-26.

Cooling device and method for electronic apparatus

Номер патента: US20060158847A1. Автор: Matti Kauranen,Mika Silvennoinen,Mika Sares. Владелец: ABB Oy. Дата публикации: 2006-07-20.

Method of coding, decoding method, coding device, decoding device and coding and decoding device

Номер патента: RU2627109C2. Автор: Йоудзи Сибахара,Такахиро Ниси,Хисао Сасаи,Кенго ТЕРАДА,Тосиясу СУГИО,Киоко ТАНИКАВА,Тору МАЦУНОБУ,Тадамаса ТОМА. Владелец: Сан Пэтент Траст. Дата публикации: 2017-08-03.

Device and method of generating audio signal subband values and device and method of generating audio signal readings in time domain

Номер патента: RU2420815C2. Автор: Маркус ЛОВАССЕР,Ральф ГАЙГЕР,Маркус ШНЕЛЛЬ,Бернхард ГРИЛЛ,Маркус МУЛТРУС,Геральд ШУЛЛЕР,Марк ГАЙЕР,Бернд ЭДЛЕР,Манфред ЛУТЦКИ,Маркус ШМИДТ,Михель МЕЛЛАР. Владелец: Фраунхофер-Гезелльшафт Цур Фердерунг Дер Ангевандтен Форшунг Е.Ф.. Дата публикации: 2011-06-10.

A method of cooling a static electronic power converter device, and a corresponding device

Номер патента: CA2595301C. Автор: Roger Marchand. Владелец: Intelligent Electronic Systems IES. Дата публикации: 2015-04-21.

Systems and methods of using implanted or wearable micro electronic devices and for using a mobile device to communicate with and manage such micro electronic devices

Номер патента: US20200043268A1. Автор: Eric Bloms,Todd Westby,Sam Bengston,Patrick McMullan. Владелец: Individual. Дата публикации: 2020-02-06.

Systems and methods of using implanted or wearable micro electronic devices and for using a mobile device to communicate with and manage such micro electronic devices

Номер патента: US20200043267A1. Автор: Eric Bloms,Todd Westby,Sam Bengston,Patrick McMullan. Владелец: Individual. Дата публикации: 2020-02-06.

Systems and methods of using implanted or wearable micro electronic devices and for using a mobile device to communicate with and manage such micro electronic devices

Номер патента: US20200402331A1. Автор: Eric Bloms,Todd Westby,Sam Bengston,Patrick McMullan. Владелец: Individual. Дата публикации: 2020-12-24.

Systems and methods of using implanted or wearable micro electronic devices and for using a mobile device to communicate with and manage such micro electronic devices

Номер патента: US20200043269A1. Автор: Eric Bloms,Todd Westby,Sam Bengston,Patrick McMullan. Владелец: Individual. Дата публикации: 2020-02-06.

Systems and methods of using implanted or wearable micro electronic devices and for using a mobile device to communicate with and manage such micro electronic devices

Номер патента: US20200043266A1. Автор: Eric Bloms,Todd Westby,Sam Bengston. Владелец: Individual. Дата публикации: 2020-02-06.

A method of associating a first type of node device and a second type of node device in a network

Номер патента: WO2023208758A1. Автор: Lili Wu,Zhan HUANG. Владелец: SIGNIFY HOLDING B.V.. Дата публикации: 2023-11-02.

Method of notifying of business audit, gateway, electronic device, and readable medium

Номер патента: US20230188620A1. Автор: HAO Zhang,Cong Yu,Ke Tao,Yuanxu Liu. Владелец: Baidu China Co Ltd. Дата публикации: 2023-06-15.

Method of Transmitting data, user equipment, network side device and computer readable storage medium

Номер патента: US11930395B2. Автор: Fangli XU,Yali Zhao. Владелец: Datang Mobile Communications Equipment Co Ltd. Дата публикации: 2024-03-12.

Method of transmitting data, user equipment, network side device and computer readable storage medium

Номер патента: US11109266B2. Автор: Fangli XU,Yali Zhao. Владелец: Datang Mobile Communications Equipment Co Ltd. Дата публикации: 2021-08-31.

Method of current management in a battery powered device and battery powered device

Номер патента: EP1552319A1. Автор: Finn c/o Oticon A/S DANIELSEN. Владелец: Oticon AS. Дата публикации: 2005-07-13.

Methods of mutually pairing a wireless gear control device and a wireless gear changing device for a bicycle, wireless devices, and wireless gear changing system

Номер патента: NL2032405B1. Автор: Marie Van Druten Roëll. Владелец: Classified Cycling Bv. Дата публикации: 2024-01-23.

Control method of color temperature and luminance for led device and control system thereof

Номер патента: US20150271891A1. Автор: Jian-An Chen,Ting-Feng Wu,Sheng-Chieh Tseng,Chin-Chen Chou. Владелец: Anteya Technology Corp. Дата публикации: 2015-09-24.

Control system, control device, conversion device, method for controlling control system, method for controlling control device, and method for controlling conversion device

Номер патента: US10728367B2. Автор: Wataru Kitamura,Kentaro Kataoka. Владелец: Murata Machinery Ltd. Дата публикации: 2020-07-28.

Methods of mutually pairing a wireless gear control device and a wireless gear changing device for a bicycle, wireless devices, and wireless gear changing system

Номер патента: WO2024008878A1. Автор: Roëll Marie van Druten. Владелец: Classified Cycling Bv. Дата публикации: 2024-01-11.

Method of handling cell selection and related network device and mobile device

Номер патента: AU2020223645A1. Автор: Ching-Wen Cheng. Владелец: Acer Inc. Дата публикации: 2021-03-18.

Method of handling cell selection and related network device and mobile device

Номер патента: US20210068013A1. Автор: Ching-Wen Cheng. Владелец: Acer Inc. Дата публикации: 2021-03-04.

Method of handling cell selection and related network device and mobile device

Номер патента: AU2020223645B2. Автор: Ching-Wen Cheng. Владелец: Acer Inc. Дата публикации: 2021-12-02.

Systems and methods of using implanted or wearable micro electronic devices and for using a mobile device to communicate with and manage such micro electronic devices

Номер патента: US10665045B2. Автор: Eric Bloms,Todd Westby,Sam Bengston,Patrick McMullan. Владелец: TW Vending Inc. Дата публикации: 2020-05-26.

A method of signal conversion, a device, an electronic device and a storage medium

Номер патента: EP3974997A1. Автор: HAO Zhang,Mingzhi QIU. Владелец: Shenzhen Lingfeng Intelligent Technology Co Ltd. Дата публикации: 2022-03-30.

Method of Signal Conversion, A Device, An Electronic Device and A Storage Medium

Номер патента: US20220092018A1. Автор: HAO Zhang,Mingzhi QIU. Владелец: Shenzhen Lingfeng Intelligent Technology Co Ltd. Дата публикации: 2022-03-24.

Method of configuring a cloud server resource, electronic device and storage medium

Номер патента: US20230074351A1. Автор: DONG Han,Minghe QIAO. Владелец: Beijing Baidu Netcom Science And Technology Co Ltd. Дата публикации: 2023-03-09.

Method of receiving a wake-up signal, wireless device and computer program

Номер патента: EP3777349A1. Автор: Muhammad Kazmi,Magnus ÅSTRÖM,Santhan THANGARASA,Yutao Sui. Владелец: Telefonaktiebolaget LM Ericsson AB. Дата публикации: 2021-02-17.

Control system, control device, conversion device, method for controlling control system, method for controlling control device, and method for controlling conversion device

Номер патента: US20190132426A1. Автор: Wataru Kitamura,Kentaro Kataoka. Владелец: Murata Machinery Ltd. Дата публикации: 2019-05-02.

Control method and update method of electronic ink display apparatus, and related devices and system

Номер патента: US20220368143A1. Автор: Xin Li,Xiaohong Wang. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2022-11-17.

Method of providing location information for mobile electronic device and mobile electrode devices using the same

Номер патента: US20150373085A1. Автор: Wen-Chien Liu,Yuan-Kang Wang,Wen-Chuan Lee,Ko-Hsin HSIANG. Владелец: HTC Corp. Дата публикации: 2015-12-24.

Method of logging in to operating system, electronic device and readable storage medium

Номер патента: US11972002B2. Автор: Shiaw-Herng Liu. Владелец: Hon Hai Precision Industry Co Ltd. Дата публикации: 2024-04-30.

Method of automatically photographing an image, image processing device and image processing system performing the same

Номер патента: US20210235009A1. Автор: Hongsuk Chung. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-07-29.

Method of configuring wireless tracking device using mobile device and mobile application therefor

Номер патента: WO2021019571A1. Автор: Yoshifumi Sakata,Gaurav Sinha,Ankit MALIK,Divyanshu SETHI. Владелец: Panasonic India Pvt. Ltd.. Дата публикации: 2021-02-04.

Method of shutting down cell, terminal device, network device, and storage medium

Номер патента: US20240179624A1. Автор: Haitao Li,Yi Hu. Владелец: GUANGDONG OPPO MOBILE TELECOMMUNICATIONS CORP LTD. Дата публикации: 2024-05-30.

Reduced size semiconductor device and method for manufacture thereof

Номер патента: US09424926B2. Автор: Kuan Fu Chen,Ya Jui Lee. Владелец: Macronix International Co Ltd. Дата публикации: 2016-08-23.

Semiconductor device and method of manufacturing the same

Номер патента: US20240324185A1. Автор: Jaehong Park,Yoongoo Kang,Seokjae Won. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-09-26.

Semiconductor device and method of manufacturing the same

Номер патента: EP4436330A2. Автор: Jaehong Park,Yoongoo Kang,Seokjae Won. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-09-25.

Method of generating specific information on semiconductor device, method of managing specific information on semiconductor device, and manufacturing apparatus for semiconductor device

Номер патента: US20240289570A1. Автор: Hiroshi Miyoshi,Noriyuki Yabuoshi. Владелец: Mitsubishi Electric Corp. Дата публикации: 2024-08-29.

Semiconductor device, device, and electronic device

Номер патента: US09990207B2. Автор: Yoshiyuki Kurokawa. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2018-06-05.

Method of use time management for semiconductor device and semiconductor device including use time managing circuit

Номер патента: US09711205B2. Автор: Chul-woo Park,Young-Soo Sohn,Jong-Pil Son. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-07-18.

Method of treating inorganic oxide film, electronic device substrate, method of manufacturing electronic device substrate, liquid crystal panel, and electronic apparatus

Номер патента: US20060233971A1. Автор: Koichi Terao,Yuji Shinohara. Владелец: Seiko Epson Corp. Дата публикации: 2006-10-19.

Apparatus and method of exposing light to a semiconductor device having a curved surface

Номер патента: WO2004063813A1. Автор: Nobuo Takeda,Ikuo Nishimoto,Ichitaroh Satoh. Владелец: YAMATAKE CORPORATION. Дата публикации: 2004-07-29.

Semiconductor device, electronic component, and electronic device

Номер патента: US09852787B2. Автор: Kiyoshi Kato,Tatsuya Onuki,Takahiko Ishizu,Wataru Uesugi. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2017-12-26.

Semiconductor device, driver IC, and electronic device

Номер патента: US09984624B2. Автор: Kei Takahashi,Roh YAMAMOTO. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2018-05-29.

Method of designing and manufacturing semiconductor device

Номер патента: US20080256496A1. Автор: Hiroshi Watanabe,Toshitake Yaegashi,Shigeyuki Takagi,Shigeru Kinoshita. Владелец: Toshiba Corp. Дата публикации: 2008-10-16.

Electrochromic material and method of manufacturing the same and electrochromic device and optical device and electronic device

Номер патента: US20200341341A1. Автор: Haeng Deog Koh,Ha Jin Kim,Min Jong BAE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-10-29.

Method of consumption characteristics control for differential-safety devices and installation for method implementation

Номер патента: RU2668628C1. Автор: Владимир Васильевич Беляков,Евгений Федорович Капинос. Владелец: Федеральное государственное унитарное предприятие "Государственный космический научно-производственный центр им. М.В. Хруничева". Дата публикации: 2018-10-02.

Semiconductor device(s) and method of refreshing the semiconductor device

Номер патента: US09711204B1. Автор: Youk Hee Kim. Владелец: SK hynix Inc. Дата публикации: 2017-07-18.

Computing device executing program performing method of analyzing power noise in semiconductor device, semiconductor device design method, and program storage medium storing program

Номер патента: US09958495B2. Автор: Young Hoe Cheon,Chan Seok Hwang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-05-01.

Control method, method of monitoring and transmitting information, method of manufacturing, comprising monitoring method, monitoring device and production plant

Номер патента: RU2727913C1. Автор: Кендзо ЯСУЕ. Владелец: Йосино Джипсум Ко., Лтд.. Дата публикации: 2020-07-24.

System for and method of designing and manufacturing a semiconductor device

Номер патента: US20020045280A1. Автор: Keith Strickland,Arshad Madni,Lance Trodd,Chris Powell. Владелец: Zarlink Semiconductor Ltd. Дата публикации: 2002-04-18.

Method of driving light emitting device, light emitting device and electronic apparatus

Номер патента: US20100328364A1. Автор: Takehiko Kubota. Владелец: Seiko Epson Corp. Дата публикации: 2010-12-30.

Semiconductor device, nonvolatile semiconductor memory, system including a plurality of semiconductor devices or nonvolatile semiconductor memories, electric card including semiconductor device or nonvolatile semiconductor memory, and electric device with which this electric card can be used

Номер патента: US20030133338A1. Автор: Hiroshi Nakamura,Kenichi Imamiya,Koichi Kawai,Kazushige Kanda. Владелец: Individual. Дата публикации: 2003-07-17.

Method of accessing word line in semiconductor device

Номер патента: US20050232064A1. Автор: Yin Lee. Владелец: Hynix Semiconductor Inc. Дата публикации: 2005-10-20.

Pattern correcting method of mask for manufacturing a semiconductor device

Номер патента: US20080212869A1. Автор: Koji Hashimoto,Satoshi Usui,Kei Yoshikawa. Владелец: Toshiba Corp. Дата публикации: 2008-09-04.

Platen roller, method of manufacturing the same, and recording device and sticking label printer provided with the rollers

Номер патента: US20100304021A1. Автор: Minoru Hoshino,Yoshinori Sato,Masanori Takahashi,Hiroyuki Kohira,Tatsuya Obuchi. Владелец: Individual. Дата публикации: 2010-12-02.

Semiconductor device, device, and electronic device

Номер патента: US20150227378A1. Автор: Yoshiyuki Kurokawa. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2015-08-13.

Semiconductor device, display module, and electronic device

Номер патента: US20180053475A1. Автор: Kei Takahashi. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2018-02-22.

Method of manufacturing an exhaust gas carrying device and tool therefor

Номер патента: US09714596B2. Автор: Stefan Keller,Otto Steinhauser,Manfred Stiglmaier,Stefan Meischkoetter. Владелец: Faurecia Emissions Control Technologies Germany GmbH. Дата публикации: 2017-07-25.

Method of manufacturing a three-dimensional medical device and resulting medical device

Номер патента: US20230181795A1. Автор: Anthony Peres,Guillaume Hofmanski. Владелец: Ph Tech. Дата публикации: 2023-06-15.

Semiconductor device, driver ic, and electronic device

Номер патента: US20180211595A1. Автор: Kei Takahashi,Roh YAMAMOTO. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2018-07-26.

Method of use time management for semiconductor device and semiconductor device including use time managing circuit

Номер патента: US20160104522A1. Автор: Chul-woo Park,Young-Soo Sohn,Jong-Pil Son. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-04-14.

Semiconductor device having photonic and electronic dies and an optical fiber assembly creating an air gap

Номер патента: US20220365286A1. Автор: Chen-Hua Yu,Chung-Shi Liu,Hao-Yi Tsai,Hung-Yi Kuo,Chewn-Pu Jou,Feng-Wei Kuo,Cheng-chieh Hsieh,Min-Hsiang Hsu,Chung-Ming Weng,Che-Hsiang Hsu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-11-17.

Method of recognizing situation requiring translation and performing translation function, and electronic device implementing the same

Номер патента: US09460090B2. Автор: Jinwoo Lee,Byungsoo Kim,Chanwoo Park,Jiyeon SEO,Myunghwan LEE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-10-04.

Method of integrating an electronic device into an eyeglass frame, and electronic glasses

Номер патента: EP3924774A1. Автор: Tim Ruytjens,Jelle DE SMET,Philip Ekkels,Phil MADDEN,Wouter WOESTENBERGHS. Владелец: Morrow NV. Дата публикации: 2021-12-22.

Color filter substrate as well as method of manufacturing the same, electro-optic device and electronic equipment

Номер патента: US6906841B2. Автор: Isao Adachi. Владелец: Seiko Epson Corp. Дата публикации: 2005-06-14.

Reticle for use in exposing semiconductor, method of producing the reticle, and semiconductor device

Номер патента: US6352800B1. Автор: Toshifumi Suganaga. Владелец: Mitsubishi Electric Corp. Дата публикации: 2002-03-05.

Catalyst for cleaning exhaust gases, method of regenerating said catalyst, as well as device and method of cleaning exhaust gases using said catalyst

Номер патента: RU2395341C1. Автор: Масахиде МИУРА,Нобуюки ТАКАГИ,Тоситака ТАНАБЕ,Ясутака НАГАИ,Казухико ДОХМАЕ,Ясуо ИКЕДА,Михо ХАТАНАКА,Тосио ЯМАМОТО. Владелец: Тойота Дзидося Кабусики Кайся. Дата публикации: 2010-07-27.

Method of electrostatic precipitator dust burden evaluation and device and method for electrostatic precipitator shaking

Номер патента: RU2481896C2. Автор: Андерс Карлссон,Скотт А. БОЙДЕН. Владелец: АЛЬСТОМ ТЕКНОЛОДЖИ ЛТД. Дата публикации: 2013-05-20.

Semiconductor device, nonvolatile semiconductor memory, system including a plurality of semiconductor devices or nonvolatile semiconductor memories, electric card including semiconductor device or nonvolatile semiconductor memory, and electric device with which this electric card can be used

Номер патента: US20050146970A1. Автор: Hiroshi Nakamura,Kenichi Imamiya,Koichi Kawai,Kazushige Kanda. Владелец: Toshiba Corp. Дата публикации: 2005-07-07.

Semiconductor device, nonvolatile semiconductor memory, system including a plurality of semiconductor devices or nonvolatile semiconductor memories, electric card including semiconductor device or nonvolatile semiconductor memory, and electric device with which this electric card can be used

Номер патента: US20060120168A1. Автор: Hiroshi Nakamura,Kenichi Imamiya,Koichi Kawai,Kazushige Kanda. Владелец: Toshiba Corp. Дата публикации: 2006-06-08.

Method of measuring physical properties, method of evaluating member, method of manufacturing electronic component device, method of manufacturing material for electronic component device, and physical property measurement system

Номер патента: US20230204530A1. Автор: Hirokazu Noma. Владелец: Resonac Corp. Дата публикации: 2023-06-29.

A method of enhancing distorted signal, a mobile communication device and a computer program product

Номер патента: WO2019096807A1. Автор: Marcin Kuropatwinski. Владелец: Talking 2 Rabbit Sarl. Дата публикации: 2019-05-23.

A method of enhancing distorted signal, a mobile communication device and a computer program product

Номер патента: US20200321016A1. Автор: Marcin Kuropatwinski. Владелец: Talking 2 Rabbit Sarl. Дата публикации: 2020-10-08.

Method of determining state of target object, electronic device, and storage medium

Номер патента: US11995154B2. Автор: Yongqing Wang. Владелец: Beijing Baidu Netcom Science And Technology Co Ltd. Дата публикации: 2024-05-28.

Method of detecting vibration anomalies in an electronic device and associated system

Номер патента: US20240151608A1. Автор: Federico Di Santo,Davide DA RÙ,Gianluca IABICHINO. Владелец: KSB SE and Co KGaA. Дата публикации: 2024-05-09.

Method of determining regional land usage property, electronic device, and storage medium

Номер патента: US20230024680A1. Автор: Dejing Dou,Xinjiang LU. Владелец: Beijing Baidu Netcom Science And Technology Co Ltd. Дата публикации: 2023-01-26.

A method of producing an optical device, an optical device, and an article comprising said optical device

Номер патента: WO2006097113A3. Автор: Maike Benter,Bjoern Winther-Jensen,Bahram Eshtehardi. Владелец: Bahram Eshtehardi. Дата публикации: 2007-04-12.

Control method of flash memory controller and associated flash memory controller and electronic device

Номер патента: US20230289098A1. Автор: Chia-Chi Liang,Tsu-Han Lu,Hsiao-Chang YEN. Владелец: Silicon Motion Inc. Дата публикации: 2023-09-14.

Method of forming resist pattern and semiconductor device manufactured with the same

Номер патента: US20080241489A1. Автор: Takeo Ishibashi,Mamoru Terai,Atsumi Yamaguchi,Takuya Hagiwara. Владелец: Renesas Technology Corp. Дата публикации: 2008-10-02.

Semiconductor device for particle measurement and method for operating the semiconductor device

Номер патента: US20230341311A1. Автор: Thomas Müller,Jens Pohl,Klaus Elian,Ludwig Heitzer,Matthias Eberl,Fabian Merbeler,Cyrus Ghahremani,Andreas Allmeier,Derek DEBIE,Christian Irrgang. Владелец: Infineon Tehcnlogies Ag. Дата публикации: 2023-10-26.

Method of operating image processor generating top- down heat map and electronic device having the image processor

Номер патента: US20240185427A1. Автор: Yongjin Lee,Sung Yup LEE. Владелец: Electronics and Telecommunications Research Institute ETRI. Дата публикации: 2024-06-06.

Method Of Identifying A Vessel, A Vessel Identifying Device and A Floating Object and Land Installation Comprising A Vessel Identifying Device

Номер патента: US20240239452A1. Автор: Rickard Lindkvist,Jonas LINDER. Владелец: ABB Schweiz AG. Дата публикации: 2024-07-18.

Method of identifying level of doneness of food, device, and computer storage medium

Номер патента: US12094228B2. Автор: Yusheng Li,Linnan Zhu,Sanjun LIU. Владелец: Guangdong Midea White Goods Technology Innovation Center Co Ltd. Дата публикации: 2024-09-17.

Method of identifying a vessel, a vessel identifying device and a floating object and land installation comprising a vessel identifying device

Номер патента: EP4403877A1. Автор: Rickard Lindkvist,Jonas LINDER. Владелец: ABB Schweiz AG. Дата публикации: 2024-07-24.

Method of executing task for large language model, device, and storage medium

Номер патента: US20240378077A1. Автор: Haifeng Wang,Dianhai Yu,Jiabin Yang,Xiyuan XIAO,Guoxia WANG,Jinle ZENG. Владелец: Beijing Baidu Netcom Science And Technology Co Ltd. Дата публикации: 2024-11-14.

Display device with a backlight, control method of controlling a backlight of a display device and program of same

Номер патента: US09606677B2. Автор: Atsushi Shibuya. Владелец: NEC Corp. Дата публикации: 2017-03-28.

Method of measuring refractive index of semiconductor memory device and method of classifying product group using the same

Номер патента: US20240331788A1. Автор: Ho Jung KANG,Tae Un Youn,Nam Cheol JEON. Владелец: SK hynix Inc. Дата публикации: 2024-10-03.

Method of producing protein beverages and denaturation circuit device and system

Номер патента: RU2586154C2. Автор: Рей-Йоунг Амос ВУ,Хоанг ХЭТАК,Арнаб САРКАР,Бозена Мальмгрен. Владелец: Пепсико, Инк.. Дата публикации: 2016-06-10.

Methods of activating input/output lines of memory devices, and related devices and systems

Номер патента: US20210110864A1. Автор: Atsushi Shimizu,Yosuke Takano. Владелец: Micron Technology Inc. Дата публикации: 2021-04-15.

Method of operating an organic light emitting display device, and organic light emitting display device

Номер патента: US09564084B2. Автор: Jong-Woong Park. Владелец: Samsung Display Co Ltd. Дата публикации: 2017-02-07.

Method of calibrating sensitivity of a touch input device and touch input device employing the same

Номер патента: US09377898B2. Автор: Ji-Hye Shin. Владелец: Samsung Display Co Ltd. Дата публикации: 2016-06-28.

Methods of testing cell arrays and semiconductor devices executing the same

Номер патента: US20180102183A1. Автор: Young Bo Shim. Владелец: SK hynix Inc. Дата публикации: 2018-04-12.

Embedded control device, method for updating a broker unit of the embedded device and computer program product

Номер патента: EP4374257A1. Автор: Kilian Telschig,Thomas Piskol,Klaus Polster,Frank Wigger. Владелец: SIEMENS AG. Дата публикации: 2024-05-29.

Forming method of cylindrical composite material, inner surface layering device, and cylindrical composite material

Номер патента: US20190283363A1. Автор: Ryoji Okabe,Kodai SHIMONO. Владелец: Mitsubishi Heavy Industries Ltd. Дата публикации: 2019-09-19.

Signal processing method of multiple mirco-electro-mechanical system (MEMS) devices and combo MEMS device applying the method

Номер патента: US09563102B2. Автор: Chia-Yu Wu,Yu-Wen Hsu,Ying-Che Lo,Lu-Po Liao. Владелец: RICHTEK TECHNOLOGY CORP. Дата публикации: 2017-02-07.

Display method of electronic identification device, controller, electronic identification device and system

Номер патента: US12026569B2. Автор: BO LIU,Jun Wu,Lichun Chen,Yunyan XIE,Yuanzhuo LIU. Владелец: Chongqing BOE Smart Electronics System Co Ltd. Дата публикации: 2024-07-02.

Method of actuating ultrasonic drive device, ultrasonic drive device, and ultrasonic treatment system

Номер патента: US20230182172A1. Автор: Shunsuke Matsui,Gen Kato,Ko KAWASIMA. Владелец: Olympus Corp. Дата публикации: 2023-06-15.

Method of programming one-time programmable (OTP) memory device and method of testing semiconductor integrated circuit including the same

Номер патента: US09754678B2. Автор: Do-Hoon Byun,Chang-Su Sim,Na-Rae Hong. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-09-05.

Method of repairing non-volatile memory based storage device and method of operating electronic system including the storage device

Номер патента: US09728277B2. Автор: Jong Tae Park,Joon Ho Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-08-08.

Method of disseminating updated drivers to mobile computing devices and a dissemination system therefor

Номер патента: US09569197B2. Автор: Narayanan Swaminathan,Nicholas Haemel,Cathy Donovan. Владелец: Nvidia Corp. Дата публикации: 2017-02-14.

Method of vehicle breakaway with a hybrid powerful transmission, vehicle and electronic device for hybrid powerful transmission control

Номер патента: RU2653337C2. Автор: Йохан Линдстрём,Никлас ПЕТТЕРССОН,Матиас БЬЕРКМАН,Микаэль БЕРГКВИСТ. Владелец: Сканиа Св Аб. Дата публикации: 2018-05-07.

Method of driving design on gate electrodes, and device and electronic device thereof

Номер патента: US20230103799A1. Автор: Yang Liu. Владелец: Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd. Дата публикации: 2023-04-06.

Bonding method of touch-control display panel, touch-control display panel and electronic device

Номер патента: US11928294B2. Автор: Hui Zhou,Peiqi ZHANG,Nana REN. Владелец: Anhui Hongcheng Opto Electronics Co Ltd. Дата публикации: 2024-03-12.

Bonding method of touch-control display panel, touch-control display panel and electronic device

Номер патента: US20230418419A1. Автор: Hui Zhou,Peiqi ZHANG,Na na REM. Владелец: Anhui Hongcheng Opto Electronics Co Ltd. Дата публикации: 2023-12-28.

Method of controlling state of electric assist bicycle, control system, and electronic device

Номер патента: US20240199157A1. Автор: Chien-Wen Wang. Владелец: Foxconn Interconnect Technology Ltd. Дата публикации: 2024-06-20.

Method of attaching radiopaque markers to intraluminal medical devices, and devices formed using the same

Номер патента: WO2008140985A1. Автор: Michael L. Davis,Paul F. Chouinard,James F. Hemerick,Brian Finander,Thyna Chau,Steve Anderl. Владелец: BOSTON SCIENTIFIC LIMITED. Дата публикации: 2008-11-20.

Control method of flash memory controller and associated flash memory controller and electronic device

Номер патента: US11809748B2. Автор: Chia-Chi Liang,Tsu-Han Lu,Hsiao-Chang YEN. Владелец: Silicon Motion Inc. Дата публикации: 2023-11-07.

Search device, method for operating search device, operation program for search device, and flow reaction equipment

Номер патента: EP4040337A1. Автор: Tatsuya Inaba,Masataka Hasegawa. Владелец: Fujifilm Corp. Дата публикации: 2022-08-10.

Recycling method of lining material of electrolytic cell cathode device and device for its implementation

Номер патента: RU2727377C1. Автор: Алексей Сергеевич Жердев,Виталий Валерьевич Пингин,Самуил Яковлевич Левенсон,Вячеслав Андреевич Голдобин,Александр Владимирович Прошкин,Андрей Геннадьевич Сбитнев,Алексей Васильевич Морозов. Владелец: Общество с ограниченной ответственностью "Объединенная Компания РУСАЛ Инженерно-технологический центр". Дата публикации: 2020-07-21.

Method of producing powdered medicine multi-dose administering device and apparatus therefor

Номер патента: CA2460466C. Автор: Masahiko Dohi,Seiji Mochizuki,Hiroshi Kuroda,Yasuhiro Zaima. Владелец: Teijin Ltd. Дата публикации: 2010-07-06.

Method of detecting vibration anomalies in an electronic device and associated system

Номер патента: EP4305391A1. Автор: Federico Di Santo,Davide DA RÙ,Gianluca IABICHINO. Владелец: KSB SE and Co KGaA. Дата публикации: 2024-01-17.

Ai marker device, method for standardising an image using the ai marker device and method for grading the severity of a skin disease using both

Номер патента: EP4282330A1. Автор: Taig MAC CARTHY ESPINAR,Alfonso Medela Ayarzaguena. Владелец: Ai Labs Group SL. Дата публикации: 2023-11-29.

Method of training prediction model, prediction method, electronic device and medium

Номер патента: US20220269952A1. Автор: ZHENG Dong,Xi Zhang,Hengshu Zhu,Hongke Zhao,Yihang CHENG. Владелец: Beijing Baidu Netcom Science And Technology Co Ltd. Дата публикации: 2022-08-25.

Method of enhancing distorted signal, a mobile communication device and a computer program product

Номер патента: US11393485B2. Автор: Marcin Kuropatwinski. Владелец: MED EL Elektromedizinische Geraete GmbH. Дата публикации: 2022-07-19.

Method of performing green wave coordination control, electronic device and storage medium

Номер патента: US20230334986A1. Автор: Yu Mei,Xiaoqin Dou,Weicen LING. Владелец: Apollo Intelligent Connectivity Beijing Technology Co Ltd. Дата публикации: 2023-10-19.

Method of automatically setting up a code reading device and camera-based code reading device

Номер патента: US20230032900A1. Автор: Pascal SCHÜLER. Владелец: SICK AG. Дата публикации: 2023-02-02.

Method of automatically setting up a code reading device and camera-based code reading device

Номер патента: US11922263B2. Автор: Pascal SCHÜLER. Владелец: SICK AG. Дата публикации: 2024-03-05.

System and method of managing, maintaining and reporting endoscope medical devices and using device-related status data

Номер патента: US20210151174A1. Автор: Carlos Gonzalez,Michael Cousin. Владелец: Sympliant Inc. Дата публикации: 2021-05-20.

Systems and methods of calibration of low fill-factor sensor devices and object detection therewith

Номер патента: WO2023022998A1. Автор: Hod Finkelstein,Allan STEINHARDT. Владелец: Aeye, Inc.. Дата публикации: 2023-02-23.

Operation method of host configured to communicate with storage devices and memory devices, and system including storage devices and memory devices

Номер патента: EP4273708A1. Автор: Kyunghan LEE,Chon Yong Lee,Jae-gon Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-11-08.

Operation method of host configured to communicate with storage devices and memory devices, and system including storage devices and memory devices

Номер патента: US20230359389A1. Автор: Kyunghan LEE,Chon Yong Lee,Jae-gon Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-11-09.

Method of constructing network model for deep learning, device, and storage medium

Номер патента: US20220058490A1. Автор: TIAN Wu,Yanjun Ma,Hongyu Liu,Haifeng Wang,Dianhai Yu,Xiaoguang Hu. Владелец: Beijing Baidu Netcom Science And Technology Co Ltd. Дата публикации: 2022-02-24.

Method of active flash management, and associated memory device and controller thereof

Номер патента: US20110138108A1. Автор: Xiangrong Li. Владелец: Silicon Motion Inc. Дата публикации: 2011-06-09.

Question answering method, method of training a question answering model, electronic device, and medium

Номер патента: US20230153337A1. Автор: Yong Zhu,Wenbin Jiang,Chunguang Chai,Yajuan Lv. Владелец: Beijing Baidu Netcom Science And Technology Co Ltd. Дата публикации: 2023-05-18.

Method of culturing vascular smooth muscle cells, culture device and medical material obtained by the culture

Номер патента: US20090274664A1. Автор: Takashi Horiuchi,Keiichi Miyamoto. Владелец: Chisso Corp. Дата публикации: 2009-11-05.

Learning device, operating method of learning device, operating program of learning device, and operating device

Номер патента: EP3995997A1. Автор: Masataka Hasegawa. Владелец: Fujifilm Corp. Дата публикации: 2022-05-11.

Method of determining set of association grids, electronic device, and storage medium

Номер патента: US20230205793A1. Автор: Chong Guo,Xiaokang Guo. Владелец: Apollo Intelligent Connectivity Beijing Technology Co Ltd. Дата публикации: 2023-06-29.

Methods of modeling a 3d object, and related devices and computer program products

Номер патента: US20200357166A1. Автор: Pal Szasz,Daniel LINÅKER. Владелец: Sony Corp. Дата публикации: 2020-11-12.

Methods of modeling a 3d object, and related devices and computer program products

Номер патента: EP3756164A1. Автор: Pal Szasz,Daniel LINÅKER. Владелец: Sony Corp. Дата публикации: 2020-12-30.

Method of reading data in non-volatile memory device, and device thereof

Номер патента: US20120033502A1. Автор: Jae Hong Kim,Kyoung Lae Cho,Hee Seok EUN. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2012-02-09.

System and method of managing security between a portable computing device and a portable computing device docking station

Номер патента: EP2411884A2. Автор: Thomas Kevin Collopy,Manjit Singh Gill. Владелец: Qualcomm Inc. Дата публикации: 2012-02-01.

Method of disseminating updated drivers to mobile computing devices and a dissemination system therefor

Номер патента: US20150154036A1. Автор: Narayanan Swaminathan,Nicholas Haemel,Cathy Donovan. Владелец: Nvidia Corp. Дата публикации: 2015-06-04.

Display method of electronic identification device, controller, electronic identification device and system

Номер патента: US20230359854A1. Автор: BO LIU,Jun Wu,Lichun Chen,Yunyan XIE,Yuanzhuo LIU. Владелец: Chongqing BOE Smart Electronics System Co Ltd. Дата публикации: 2023-11-09.

Method of Controlling Battery Replacement, Battery Replacement Control Device, and Battery Replacement Control System

Номер патента: US20240166081A1. Автор: Takahiro Nomura,Hiroshi Umeno,Soshiro Murata,Yuya ONOZUKA. Владелец: Toyota Motor Corp. Дата публикации: 2024-05-23.

Operation method of controller configured to control nonvolatile memory device and operation method of storage device

Номер патента: US12002519B2. Автор: Heewon Lee,Kwangwoo Lee,Yunjung LEE,Sangjin Yoo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-06-04.

Method of Controlling Belt Fixing Device, Belt Fixing Device, and Image Forming Apparatus

Номер патента: US20090245843A1. Автор: Makoto Sato. Владелец: Seiko Epson Corp. Дата публикации: 2009-10-01.

Method of controlling battery replacement, battery replacement control device, and battery replacement control system

Номер патента: EP4375129A1. Автор: Takahiro Nomura,Hiroshi Umeno,Soshiro Murata,Yuya ONOZUKA. Владелец: Toyota Motor Corp. Дата публикации: 2024-05-29.

Method of detecting target objects in images, electronic device, and storage medium

Номер патента: US20230005280A1. Автор: Cheng-Feng Wang,Li-Che Lin,Hui-Xian Yang. Владелец: Hon Hai Precision Industry Co Ltd. Дата публикации: 2023-01-05.

Method for making semiconductor device

Номер патента: RU2677500C1. Автор: Гасан Абакарович Мустафаев,Асламбек Идрисович Хасанов,Руслан Азаевич Кутуев,Арслан Гасанович Мустафаев. Владелец: Федеральное государственное бюджетное образовательное учреждение высшего образования "Чеченский государственный университет". Дата публикации: 2019-01-17.

ELECTRODE STRUCTURE, METHOD OF FABRICATING THE SAME, AND SEMICONDUCTOR DEVICE INCLUDING THE ELECTRODE STRUCTURE

Номер патента: US20120001267A1. Автор: . Владелец: . Дата публикации: 2012-01-05.

Method of manufacturing interconnections for semiconductor devices

Номер патента: RU2593415C1. Автор: Сергей Владимирович Дубков,Дмитрий Геннадьевич Громов,Евгений Александрович Лебедев,Борис Николаевич Рыгалин,Алексей Сергеевич Шулятьев. Владелец: Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский университет "Московский институт электронной техники" (МИЭТ). Дата публикации: 2016-08-10.

Method of manufacturing interconnections for semiconductor devices

Номер патента: RU2593416C1. Автор: Сергей Владимирович Дубков,Дмитрий Геннадьевич Громов,Евгений Александрович Лебедев,Борис Николаевич Рыгалин,Алексей Сергеевич Шулятьев. Владелец: Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский университет "Московский институт электронной техники" (МИЭТ). Дата публикации: 2016-08-10.

Method of operating an electronic lock locking a community asset, and electronic lock system

Номер патента: AU2022233198A9. Автор: Michel Lessard,Xiao Qiang Zhou,Farnaz ABBASI,Alberto PALOMAR ROBLEDO. Владелец: Dormakaba Canada Inc. Дата публикации: 2024-09-26.

Method of integrating quartz crystal oscillator into synchronisation device and synchronisation device enabling reduction of requirements for said oscillator

Номер патента: RU2382491C1. Автор: Стефан Милчев Панталеев,Каринэ Анастасовна Панталеева. Владелец: Общество с ограниченной ответственностью "Леди Эл". Дата публикации: 2010-02-20.

Method of wheelset locating, locating device, wheelset positioning device and complex for measuring normalized linear dimensions of wheelsets and co mplex for measuring normalized linear dimensions of wheelsets

Номер патента: RU2229995C2. Автор: В.В. Сыченков,В.В. Фроловский. Владелец: Сыченков Владимир Васильевич. Дата публикации: 2004-06-10.

Method of dynamic testing of structures and systems on mechanical and electronic effects

Номер патента: RU2569636C2. Автор: Владимир Владимирович Крылов,Самуил Соломонович Зельманов. Владелец: Публичное акционерное общество "Нижегородский авиастроительный завод "Сокол" (ПАО "НАЗ "Сокол"). Дата публикации: 2015-11-27.

Method of testing and adjustment of diesel fuel devices and test rig for this method implementation

Номер патента: RU2562349C1. Автор: Самат Зайтунович Инсафуддинов,Филюс Раисович Сафин,Эльмир Маликович Гайсин. Владелец: Филюс Раисович Сафин. Дата публикации: 2015-09-10.

PACKAGE FOR SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME AND SEMICONDUCTOR DEVICE

Номер патента: US20120001312A1. Автор: . Владелец: Panasonic Corporation. Дата публикации: 2012-01-05.

SEMICONDUCTOR DEVICE

Номер патента: US20120001170A1. Автор: Yamazaki Shunpei. Владелец: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.. Дата публикации: 2012-01-05.

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING OF SAME

Номер патента: US20120001321A1. Автор: IMAMURA Tomomi,Natsuda Tetsuo,Nishijo Yoshinosuke. Владелец: KABUSHIKI KAISHA TOSHIBA. Дата публикации: 2012-01-05.

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Номер патента: US20120001226A1. Автор: . Владелец: Sanken Electric Co., Ltd.. Дата публикации: 2012-01-05.

MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

Номер патента: US20120003795A1. Автор: . Владелец: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.. Дата публикации: 2012-01-05.

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Номер патента: US20120001169A1. Автор: Yamazaki Shunpei. Владелец: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.. Дата публикации: 2012-01-05.

SEMICONDUCTOR DEVICE

Номер патента: US20120001179A1. Автор: Yamazaki Shunpei,Takahashi Masahiro,TOCHIBAYASHI Katsuaki,HIROHASHI Takuya,NAKAZAWA Yasutaka,YOKOYAMA Masatoshi. Владелец: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.. Дата публикации: 2012-01-05.

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Номер патента: US20120001257A1. Автор: MURAKAWA Kouichi. Владелец: RENESAS ELECTRONICS CORPORATION. Дата публикации: 2012-01-05.

SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

Номер патента: US20120001304A1. Автор: . Владелец: TOKYO ELECTRON LIMITED. Дата публикации: 2012-01-05.

THREE DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

Номер патента: US20120001345A1. Автор: Hwang Kihyun,YANG Junkyu,Choi Hanmei,Park ChanJin,Min Gyungjin,Yoo Dongchul,Kong Yoochul. Владелец: . Дата публикации: 2012-01-05.

METHOD FOR FORMING SILICON OXIDE FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Номер патента: US20120003842A1. Автор: Tanaka Yoshinobu,Ueda Hirokazu,Ohsawa Yusuke. Владелец: TOKYO ELECTRON LIMITED. Дата публикации: 2012-01-05.

PACKAGE FOR SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME AND SEMICONDUCTOR DEVICE

Номер патента: US20120001310A1. Автор: Horiki Hiroshi,NISHINO MASANORI. Владелец: Panasonic Corporation. Дата публикации: 2012-01-05.

PACKAGE FOR SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME AND SEMICONDUCTOR DEVICE

Номер патента: US20120001311A1. Автор: . Владелец: Panasonic Corporation. Дата публикации: 2012-01-05.

GATE STRUCTURES AND METHOD OF FABRICATING SAME

Номер патента: US20120001266A1. Автор: . Владелец: Taiwan Semiconductor Manufacturing Company, Ltd.. Дата публикации: 2012-01-05.

SEMICONDUCTOR DEVICE

Номер патента: US20120001318A1. Автор: . Владелец: Denso Corporation. Дата публикации: 2012-01-05.

Methods of Forming Nonvolatile Memory Devices Using Nonselective and Selective Etching Techniques to Define Vertically Stacked Word Lines

Номер патента: US20120003831A1. Автор: . Владелец: . Дата публикации: 2012-01-05.

Semiconductor Device

Номер патента: US20120001269A1. Автор: . Владелец: KABUSHIKI KAISHA TOSHIBA. Дата публикации: 2012-01-05.

SEMICONDUCTOR DEVICE

Номер патента: US20120001275A1. Автор: . Владелец: Panasonic Corporation. Дата публикации: 2012-01-05.

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

Номер патента: US20120001331A1. Автор: . Владелец: KABUSHI KAISHA TOSHIBA. Дата публикации: 2012-01-05.

METHOD OF ARRANGING PADS IN SEMICONDUCTOR DEVICE, SEMICONDUCTOR MEMORY DEVICE USING THE METHOD, AND PROCESSING SYSTEM HAVING MOUNTED THEREIN THE SEMICONDUCTOR MEMORY DEVICE

Номер патента: US20120002456A1. Автор: OH Chi-sung. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2012-01-05.

SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

Номер патента: US20120003808A1. Автор: Lee Sang-yun. Владелец: BESANG INC.. Дата публикации: 2012-01-05.

SEMICONDUCTOR DEVICE

Номер патента: US20120001294A1. Автор: . Владелец: HYNIX SEMICONDUCTOR INC.. Дата публикации: 2012-01-05.

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

Номер патента: US20120001333A1. Автор: HWANG Chang Youn. Владелец: HYNIX SEMICONDUCTOR INC.. Дата публикации: 2012-01-05.

Бесплатный поиск патентной информации. Построение патентных ландшафтов и отчетов.

Главная
Проекты и услуги
Контакты

© 2021-2022 - All Rights Reserved - разработано Ecoruspace.me.