Россия, г. Королев.

eburdiyg@gmail.com

8 (903) 781-84-63

  • Главная
  • METHOD OF FORMING SEMICONDUCTOR DEVICE INCLUDING PROTRUSION TYPE ISOLATION LAYER

METHOD OF FORMING SEMICONDUCTOR DEVICE INCLUDING PROTRUSION TYPE ISOLATION LAYER

Номер патента: US20150333151A1
Опубликовано: 19-11-2015
Автор(ы): Kim Dong-hyun, PARK Jai-kyun
Принадлежит:
Получить PDF файл: Открыть в новом окне

Вам могут быть интересны следующие патенты

Рисунок 1. Взаимосвязь патентов (ближайшие 20).

Method of manufacturing at least one semiconductor device on or in a base semiconductor material disposed in a containment structure including a buried layer

Номер патента: US11710632B2. Автор: Chia-Wei Liu,Hung-Chih Yu,Hung-Te Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-07-25.

Methods of forming low noise semiconductor devices

Номер патента: US09583595B2. Автор: Giovanni Calabrese,Uwe Hodel,Wolfgang Molzer,Domagoj Siprak. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2017-02-28.

Method of Manufacturing a Silicon Carbide Semiconductor Device by Removing Amorphized Portions

Номер патента: US20170103894A1. Автор: Roland Rupp,Wolfgang Bergner,Romain Esteve,Dethard Peters,Thomas Aichinger,Daniel Kueck,Gerald Unegg,Victorina Poenariu,Gerald Reinwald. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2017-04-13.

Method of manufacturing a silicon carbide semiconductor device by removing amorphized portions

Номер патента: US09934972B2. Автор: Roland Rupp,Wolfgang Bergner,Romain Esteve,Dethard Peters,Thomas Aichinger,Daniel Kueck,Gerald Unegg,Victorina Poenariu,Gerald Reinwald. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2018-04-03.

Methods of forming features in semiconductor device structures

Номер патента: US20140145311A1. Автор: Adam L. Olson,William R. Brown,Ho Seop Eom,Xue Chen,Kaveri Jain,Anton J. deVilliers,Lijing Gou. Владелец: Micron Technology Inc. Дата публикации: 2014-05-29.

Methods of forming a capacitor, semiconductor device, and fine pattern, and semiconductor device formed by the methods

Номер патента: US20200312853A1. Автор: Jinwoo Bae,Sejin Park,Yoonyoung CHOI,Sungsoo YIM,Seongmo KOO,Byeongmoo KANG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-10-01.

Methods of forming a FinFET semiconductor device with a unique gate configuration, and the resulting FinFET device

Номер патента: US09472446B2. Автор: Xiuyu Cai,Kangguo Cheng,Ali Khakifirooz,Ruilong Xie. Владелец: International Business Machines Corp. Дата публикации: 2016-10-18.

Method of fabricating semiconductor device

Номер патента: US20170025519A1. Автор: Yikun Chen,Duan Quan Liao,Ching Hwa Tey. Владелец: United Microelectronics Corp. Дата публикации: 2017-01-26.

Method of fabricating semiconductor device

Номер патента: US09583594B2. Автор: Yikun Chen,Duan Quan Liao,Ching Hwa Tey. Владелец: United Microelectronics Corp. Дата публикации: 2017-02-28.

METHODS OF FORMING A FINFET SEMICONDUCTOR DEVICE WITH A UNIQUE GATE CONFIGURATION, AND THE RESULTING FINFET DEVICE

Номер патента: US20150371892A1. Автор: Cheng Kangguo,Khakifirooz Ali,Xie Ruilong,Cai Xiuyu. Владелец: . Дата публикации: 2015-12-24.

Semiconductor device and method of forming patterns for semiconductor device

Номер патента: KR101736983B1. Автор: 이종민,박영우,김태용,한지훈,곽동화,이동식,나종훈,유장현. Владелец: 삼성전자 주식회사. Дата публикации: 2017-05-18.

Method for forming a power semiconductor device and a power semiconductor device

Номер патента: US09899470B2. Автор: Marko Lemke,Rolf Weis,Ralf Rudolf,Knut Stahrenberg. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2018-02-20.

Semiconductor device and method for fabricating the same

Номер патента: US9142684B2. Автор: Kyung-Sik MUN. Владелец: SK hynix Inc. Дата публикации: 2015-09-22.

Semiconductor device and method for fabricating the same

Номер патента: US20150115347A1. Автор: Kyung-Sik MUN. Владелец: SK hynix Inc. Дата публикации: 2015-04-30.

Method of forming trench in semiconductor device

Номер патента: US20050009264A1. Автор: Sang Ryu. Владелец: Individual. Дата публикации: 2005-01-13.

Semiconductor device and method of fabricating the same

Номер патента: US09607985B1. Автор: Chen-Ming Huang,I-Ming Tseng,Wen-An Liang. Владелец: United Microelectronics Corp. Дата публикации: 2017-03-28.

Fabrication method of semiconductor integrated circuit device

Номер патента: US20070259522A1. Автор: Shinichi Nakabayashi,Hirofumi Tsuchiyama,Ryousei Kawai,Toshiyuki Arai,Fumiyuki Kanai. Владелец: Individual. Дата публикации: 2007-11-08.

Method of forming layout of semiconductor device

Номер патента: US20200111791A1. Автор: Chien-Hao Chen,Yi-Ting Chen,Chia-Hung Wang,En-Chiuan Liou,Sho-Shen Lee,Jhao-Hao Lee. Владелец: Fujian Jinhua Integrated Circuit Co Ltd. Дата публикации: 2020-04-09.

Method of forming layout of semiconductor device

Номер патента: US10707213B2. Автор: Chien-Hao Chen,Yi-Ting Chen,Chia-Hung Wang,En-Chiuan Liou,Sho-Shen Lee,Jhao-Hao Lee. Владелец: Fujian Jinhua Integrated Circuit Co Ltd. Дата публикации: 2020-07-07.

Method of forming patterns for semiconductor device

Номер патента: US20140191405A1. Автор: Young-Ho Lee,Jae-Hwang Sim,Sang-Yong Park,Kyung-Lyul Moon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2014-07-10.

Method of bevel trimming three dimensional semiconductor device

Номер патента: US20120270394A1. Автор: Yi-Nan Chen,Hsien-Wen Liu,Shing-Yih Shih. Владелец: Nanya Technology Corp. Дата публикации: 2012-10-25.

Method of manufacturing a double-source semiconductor device

Номер патента: US09472569B2. Автор: Ki Hong Lee,Seung Ho Pyi,Ji Yeon Baek. Владелец: SK hynix Inc. Дата публикации: 2016-10-18.

Methods of fabricating isolation regions of semiconductor devices and structures thereof

Номер патента: US09653543B2. Автор: Roland Hampp,Armin Tilke,Marcus Culmsee,Chris Stapelmann,Bee Kim Hong. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2017-05-16.

Methods of forming and operating semiconductor device

Номер патента: US20110194356A1. Автор: Yoon Kim,Byung-gook Park,Wook-Hyun Kwon,Yun-Heub Song. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2011-08-11.

Method of making a vertical gate semiconductor device

Номер патента: EP1535342A1. Автор: Gordon M. Grivna. Владелец: Semiconductor Components Industries LLC. Дата публикации: 2005-06-01.

Method of making a vertical gate semiconductor device

Номер патента: WO2004017414A1. Автор: Gordon M. Grivna. Владелец: Semiconductor Components Industries L.L.C.. Дата публикации: 2004-02-26.

Method of patterning features of a semiconductor device

Номер патента: US09627262B2. Автор: Ming-Feng Shieh,Ru-Gun Liu,Chih-Ming Lai,Wen-Chun Huang,Wei-Chao Chiu,Chen-Yu Chen,Nian-Fuh Cheng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-04-18.

Butted contacts and methods of fabricating the same in semiconductor devices

Номер патента: US12002756B2. Автор: Chih-Hao Wang,Chia-Hao Chang,Jia-Chuan You,Yu-Ming Lin,Tien-Lu Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-06-04.

Method of forming semiconductor device using etch stop layer

Номер патента: US09564357B2. Автор: Fang-I Chih,Yen-Chang Chao. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-02-07.

Semiconductor device including fin shaped structure and method for fabricating the same

Номер патента: US09722078B2. Автор: Chao-Hung Lin,Chung-Yi Chiu,Shih-Fang Hong. Владелец: United Microelectronics Corp. Дата публикации: 2017-08-01.

Method for fabricating semiconductor device including fin shaped structure

Номер патента: US20170194193A1. Автор: Chao-Hung Lin,Chung-Yi Chiu,Shih-Fang Hong. Владелец: United Microelectronics Corp. Дата публикации: 2017-07-06.

Method for fabricating semiconductor device including fin shaped structure

Номер патента: US9881831B2. Автор: Chao-Hung Lin,Chung-Yi Chiu,Shih-Fang Hong. Владелец: United Microelectronics Corp. Дата публикации: 2018-01-30.

Method for fabricating semiconductor device including fin shaped structure

Номер патента: US09881831B2. Автор: Chao-Hung Lin,Chung-Yi Chiu,Shih-Fang Hong. Владелец: United Microelectronics Corp. Дата публикации: 2018-01-30.

Semiconductor device and method of fabricating the same

Номер патента: US09627509B2. Автор: Sangjin Hyun,Wandon Kim,Shinhye Kim,Byung-Suk Jung,TaekSoo JEON,Kyungbum KOO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-04-18.

Semiconductor device and method of fabricating the same

Номер патента: US20200105765A1. Автор: Yoosang Hwang,Keunnam Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-04-02.

Butted contacts and methods of fabricating the same in semiconductor devices

Номер патента: US20240321746A1. Автор: Chih-Hao Wang,Chia-Hao Chang,Jia-Chuan You,Yu-Ming Lin,Tien-Lu Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-26.

Methods of Forming Spacers for Semiconductor Devices Including Backside Power Rails

Номер патента: US20220359264A1. Автор: Wang Chih-hao,Chuang Cheng-Chi,Su Huan-Chieh,Yu Li-Zhen,Huang Lin-Yu. Владелец: . Дата публикации: 2022-11-10.

Semiconductor device and method for fabricating the same

Номер патента: US20170047447A1. Автор: Chao-Hung Lin,Chung-Yi Chiu,Shih-Fang Hong. Владелец: United Microelectronics Corp. Дата публикации: 2017-02-16.

METHOD OF FORMING PATTERNS OF SEMICONDUCTOR DEVICE

Номер патента: US20160005615A1. Автор: LEE Woo-cheol,Lee Do-Haing,Kim Il-Sup,KIM Do-hyoung,JUNG Hyun-Ho. Владелец: . Дата публикации: 2016-01-07.

Method of forming patterns of semiconductor device

Номер патента: KR101515907B1. Автор: 박상용,박재관,곽동화,유병관. Владелец: 삼성전자주식회사. Дата публикации: 2015-04-29.

Method of forming junction of semiconductor device

Номер патента: US20090111233A1. Автор: Dong Ho Lee. Владелец: Hynix Semiconductor Inc. Дата публикации: 2009-04-30.

Method of forming patterns of semiconductor device

Номер патента: US20240194521A1. Автор: JungHan LEE,Kwanyoung Chun,Jisoo Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-06-13.

Methods of forming patterns of semiconductor devices

Номер патента: US09779941B2. Автор: Seok-Han Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-10-03.

Method of manufacturing isolation structure for semiconductor device

Номер патента: US10256136B2. Автор: Eun-Jeong Kim,Han-Sang Song,Su-ho Kim,Jin-Yul Lee. Владелец: SK hynix Inc. Дата публикации: 2019-04-09.

Low-dielectric silicon nitride film and method of forming the same, semiconductor device and fabrication process thereof

Номер патента: US6890869B2. Автор: Gishi Chung. Владелец: Tokyo Electron Ltd. Дата публикации: 2005-05-10.

Semiconductor devices having high-quality epitaxial layer and methods of manufacturing the same

Номер патента: US20170162697A1. Автор: Huilong Zhu. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2017-06-08.

Semiconductor device and method of manufacturing the same

Номер патента: US20170236897A1. Автор: Jae-Hyun Yoo,Young-Mok Kim,Myoung-Kyu Park,Kwan-Jae Song,In-Hack Lee,Seong-Hun Jang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-08-17.

Semiconductor device and method of manufacturing the same

Номер патента: US09954057B2. Автор: Jae-Hyun Yoo,Young-Mok Kim,Myoung-Kyu Park,Kwan-Jae Song,In-Hack Lee,Seong-Hun Jang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-04-24.

Method of rinsing and drying semiconductor device and method of manufacturing semiconductor device using the same

Номер патента: US20150287590A1. Автор: Hyosan Lee,Yongsun Ko,Kwangsu Kim,Seokhoon Kim,Kuntack Lee,Yong-jhin Cho,Jihoon Jeong,Jung-min Oh,ChangSup Mun. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2015-10-08.

Semiconductor device and method for fabricating the same

Номер патента: US20010000914A1. Автор: Young Park,Jong Lee,Hyeok Lee. Владелец: LG Semicon Co Ltd. Дата публикации: 2001-05-10.

Method for via formation in a semiconductor device

Номер патента: US20120302062A1. Автор: Yi Nan Chen,Hsien Wen Liu,Chih Ching Lin. Владелец: Nanya Technology Corp. Дата публикации: 2012-11-29.

Semiconductor device

Номер патента: US20180211962A1. Автор: Won Chul Lee,Ye Ram KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-07-26.

High throughput epitaxial liftoff for releasing multiple semiconductor device layers from a single base substrate

Номер патента: US20130295750A1. Автор: Ning Li,Cheng-Wei Cheng,Kuen-Ting Shiu. Владелец: International Business Machines Corp. Дата публикации: 2013-11-07.

Methods of forming spacers for semiconductor devices including backside power rails

Номер патента: US11915972B2. Автор: Chih-Hao Wang,Cheng-Chi Chuang,Huan-Chieh Su,Li-Zhen YU,Lin-Yu HUANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-02-27.

Methods of Forming Spacers for Semiconductor Devices Including Backside Power Rails

Номер патента: US20240186179A1. Автор: Chih-Hao Wang,Cheng-Chi Chuang,Huan-Chieh Su,Li-Zhen YU,Lin-Yu HUANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-06-06.

Power Semiconductor Device and Method of Forming a Power Semiconductor Device

Номер патента: US20200235235A1. Автор: Matteo Dainese,Erich Griebl,Ingo Dirnstorfer,Markus Beninger-Bina. Владелец: Infineon Technologies Dresden GmbH and Co KG. Дата публикации: 2020-07-23.

Method of forming pattern of semiconductor device

Номер патента: US20150118852A1. Автор: Yool Kang,Hyung-Rae Lee,Seong-Ji Kwon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2015-04-30.

Method of forming interconnectings in semiconductor devices

Номер патента: US20020090810A1. Автор: Mario Napolitano. Владелец: STMICROELECTRONICS SRL. Дата публикации: 2002-07-11.

Method of Forming Patterns of Semiconductor Device

Номер патента: US20100323520A1. Автор: Tae Kyung Kim. Владелец: Hynix Semiconductor Inc. Дата публикации: 2010-12-23.

Method of Forming Patterns of Semiconductor Device

Номер патента: US20120086134A1. Автор: Tae Kyung Kim. Владелец: Hynix Semiconductor Inc. Дата публикации: 2012-04-12.

Method of selectively forming layer using atomic layer deposition and method of forming interconnect of semiconductor device using the same

Номер патента: US20240203788A1. Автор: Jeongyub Lee,Sunghee Lee,Eunhyoung Cho,Hanboram LEE. Владелец: Incheon National University Research and Business Foundation. Дата публикации: 2024-06-20.

Method of selectively forming layer using atomic layer deposition and method of forming interconnect of semiconductor device using the same

Номер патента: EP4389930A2. Автор: Jeongyub Lee,Sunghee Lee,Eunhyoung Cho,Hanboram LEE. Владелец: Incheon National University Research and Business Foundation. Дата публикации: 2024-06-26.

Method of selectively forming layer using atomic layer deposition and method of forming interconnect of semiconductor device using the same

Номер патента: EP4389930A3. Автор: Jeongyub Lee,Sunghee Lee,Eunhyoung Cho,Hanboram LEE. Владелец: Incheon National University Research and Business Foundation. Дата публикации: 2024-08-14.

Method of making openings in a semiconductor device with reduced residue by transferring layers

Номер патента: US09431291B2. Автор: Keisuke Nakazawa. Владелец: Toshiba Corp. Дата публикации: 2016-08-30.

Methods of Forming Patterns with Multiple Layers for Semiconductor Devices

Номер патента: US20170125256A1. Автор: Hong-Rae Kim,Jun-Soo Lee,Jeon-Il Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-05-04.

Method of manufacturing storage electrode in semiconductor device

Номер патента: US20010048127A1. Автор: Dong Kim,Sang Park,Seung Lee,Cha Dong. Владелец: Individual. Дата публикации: 2001-12-06.

Method of manufacturing storage electrode in semiconductor device

Номер патента: US20020066918A1. Автор: Dong Kim,Sang Park,Seung Lee,Cha Dong. Владелец: Hynix Semiconductor Inc. Дата публикации: 2002-06-06.

Method of making a multilevel memory stack structure using a cavity containing a sacrificial fill material

Номер патента: US09853043B2. Автор: Zhenyu Lu,Daxin Mao,Tong Zhang,Johann Alsmeier,Henry Chien,Wenguang Shi. Владелец: SanDisk Technologies LLC. Дата публикации: 2017-12-26.

Semiconductor devices and methods of manufacture thereof

Номер патента: US09548305B2. Автор: MING-CHING Chang,yu chao Lin,Chao-Cheng Chen,Jih-Jse Lin,I-Yin Lu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-01-17.

Methods of forming wells in semiconductor devices

Номер патента: US20050142728A1. Автор: Dae Kim. Владелец: DongbuAnam Semiconductor Inc. Дата публикации: 2005-06-30.

Method of forming contact and semiconductor device manufactured by using the method

Номер патента: US20130277848A1. Автор: Ki Jun Yun. Владелец: Dongbu HitekCo Ltd. Дата публикации: 2013-10-24.

Device with reinforced metal gate spacer and method of fabricating

Номер патента: US09780193B2. Автор: Kun-Yuan Liao,Feng-Yi Chang,Chun-Lung Chen,Chia-Lin Lu,Yu-Cheng Tung. Владелец: United Microelectronics Corp. Дата публикации: 2017-10-03.

Methods of forming material layer, semiconductor devices, and methods of manufacturing the same

Номер патента: US11967502B2. Автор: Jinho Lee,Younsoo Kim,Jaewoon Kim,Haeryong Kim,Tsubasa Shiratori. Владелец: Adeka Corp. Дата публикации: 2024-04-23.

Semiconductor device and method of fabricating the same

Номер патента: US20170092771A1. Автор: Chun-Yuan Wu,Chia-Fu Hsu,Zhibiao Zhou,Qinggang Xing,Xu Yang Shen. Владелец: United Microelectronics Corp. Дата публикации: 2017-03-30.

Semiconductor device and method for fabricating the same

Номер патента: US09653402B2. Автор: Chen-Ming Huang,I-Ming Tseng,Wen-An Liang. Владелец: United Microelectronics Corp. Дата публикации: 2017-05-16.

Semiconductor device and method of fabricating the same

Номер патента: US09608126B1. Автор: Chun-Yuan Wu,Chia-Fu Hsu,Zhibiao Zhou,Qinggang Xing,Xu Yang Shen. Владелец: United Microelectronics Corp. Дата публикации: 2017-03-28.

Partial, self-biased isolation in semiconductor devices

Номер патента: US09825169B2. Автор: Xu Cheng,XIN Lin,Zhihong Zhang,Hongning Yang,Jiang-Kai Zuo. Владелец: NXP USA Inc. Дата публикации: 2017-11-21.

Manufacturing method of semiconductor device

Номер патента: US09793382B2. Автор: Kun-Yuan Liao,Feng-Yi Chang,Chun-Hsien Lin,Chun-Lung Chen,Chia-Lin Lu. Владелец: United Microelectronics Corp. Дата публикации: 2017-10-17.

Three-dimensional semiconductor device and method of manufacturing the three-dimensional semiconductor device

Номер патента: US20230301104A1. Автор: Seung Min Lee,Jae Seok Kim,Bo yun KIM,Nam Kuk KIM. Владелец: SK hynix Inc. Дата публикации: 2023-09-21.

Method of fabricating gate oxide of semiconductor device

Номер патента: US20190096682A1. Автор: Yasutoshi Okuno,Andrew Joseph Kelly,Yusuke Oniki,Ta-Chun Ma. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2019-03-28.

Semiconductor device and manufacturing method thereof

Номер патента: US09640484B2. Автор: Kun-Yuan Liao,Feng-Yi Chang,Chun-Hsien Lin,Chun-Lung Chen,Chia-Lin Lu. Владелец: United Microelectronics Corp. Дата публикации: 2017-05-02.

Semiconductor device, method of and system for manufacturing semiconductor device

Номер патента: US11855070B2. Автор: Hui-Zhong ZHUANG,Chih-Liang Chen,Li-Chun Tien,Wei-Hsin TSAI. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-12-26.

Semiconductor device, method of and system for manufacturing semiconductor device

Номер патента: US20240096865A1. Автор: Hui-Zhong ZHUANG,Chih-Liang Chen,Li-Chun Tien,Wei-Hsin TSAI. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-03-21.

Method of FinFET formation

Номер патента: US09660058B2. Автор: Qiuhua Han. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2017-05-23.

Semiconductor structures including dual fins and methods of fabrication

Номер патента: US20120175748A1. Автор: David Hwang,Aaron R. Wilson,Larson Lindholm. Владелец: Micron Technology Inc. Дата публикации: 2012-07-12.

Method of Fabricating Landing Plug in Semiconductor Device

Номер патента: US20100330801A1. Автор: Kyoung Bong Rouh. Владелец: Hynix Semiconductor Inc. Дата публикации: 2010-12-30.

Three-dimensional semiconductor device and method of manufacturing the three-dimensional semiconductor device

Номер патента: US20230301103A1. Автор: Seung Min Lee,Jung Ryul Ahn. Владелец: SK hynix Inc. Дата публикации: 2023-09-21.

Soi substrate, method of manufacturing the soi substrate, semiconductor device, and method of manufacturing the semiconductor device

Номер патента: US20120193714A1. Автор: Masao Okihara. Владелец: Lapis Semiconductor Co Ltd. Дата публикации: 2012-08-02.

Method of making a multilevel memory stack structure using a cavity containing a sacrificial fill material

Номер патента: EP3286784A1. Автор: Zhenyu Lu,Daxin Mao,Tong Zhang,Johann Alsmeier,Henry Chien,Wenguang Shi. Владелец: SanDisk Technologies LLC. Дата публикации: 2018-02-28.

Stacked semiconductor device and method of fabricating same

Номер патента: US20200168606A1. Автор: Zheng Tao,Boon Teik CHAN,Steven Demuynck. Владелец: Interuniversitair Microelektronica Centrum vzw IMEC. Дата публикации: 2020-05-28.

Methods of forming patterns with multiple layers for semiconductor devices

Номер патента: US10014181B2. Автор: Hong-Rae Kim,Jun-Soo Lee,Jeon-Il Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-07-03.

Semiconductor device and method of fabricating the same

Номер патента: US20220238518A1. Автор: Jae Hyun Park,Heonjong Shin. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-07-28.

Thin-film semiconductor device and method of manufacturing the same

Номер патента: US20020102777A1. Автор: Takao Yonehara,Kiyofumi Sakaguchi. Владелец: Individual. Дата публикации: 2002-08-01.

Semiconductor device and method of manufacturing the same

Номер патента: US11823999B2. Автор: Hae Chan PARK,Jae Taek Kim,Jang Won Kim. Владелец: SK hynix Inc. Дата публикации: 2023-11-21.

Semiconductor device and method of fabricating the same

Номер патента: US20210035971A1. Автор: Jae Hyun Park,Heonjong Shin. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-02-04.

Semiconductor device and method of manufacturing the same

Номер патента: US20210028105A1. Автор: Hae Chan PARK,Jae Taek Kim,Jang Won Kim. Владелец: SK hynix Inc. Дата публикации: 2021-01-28.

Semiconductor device structure having gate dielectric layer

Номер патента: US20210280432A1. Автор: Huang-Lin Chao,Chih-Cheng Lin,Ziwei Fang,I-Ming Chang,Wei-Ming You,Chi-Ying Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-09-09.

Recessed gate structures including blocking members, methods of forming the same, semiconductor devices having the recessed gate structures and methods of forming the semiconductor devices

Номер патента: US20060289931A1. Автор: Eun-Cheol Lee,Tae-Young Chung,Yong-Sung Kim,Soo-Ho Shin. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2006-12-28.

Device with reinforced metal gate spacer and method of fabricating

Номер патента: US20180006133A1. Автор: Kun-Yuan Liao,Feng-Yi Chang,Chia-Lin Liu,Chun-Lung Chen,Yu-Cheng Tung. Владелец: United Microelectronics Corp. Дата публикации: 2018-01-04.

METHODS OF FORMING CONTACTS TO SEMICONDUCTOR DEVICES USING A BOTTOM ETCH STOP LAYER AND THE RESULTING DEVICES

Номер патента: US20150228776A1. Автор: Xie Ruilong. Владелец: GLOBALFOUNDRIES INC.. Дата публикации: 2015-08-13.

Method of forming contact in semiconductor device and fabrication method of pMOSFET using the same

Номер патента: KR100458086B1. Автор: 손용선. Владелец: 주식회사 하이닉스반도체. Дата публикации: 2004-11-26.

Method of forming semiconductor device including protrusion type isolation layer

Номер патента: US09741611B2. Автор: Dong-Hyun Kim,Jai-kyun Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-08-22.

Semiconductor device including protrusion type isolation layer

Номер патента: US20100258860A1. Автор: Dong-Hyun Kim,Jai-kyun Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2010-10-14.

Semiconductor device including protrusion type isolation layer

Номер патента: US8115246B2. Автор: Dong-Hyun Kim,Jai-kyun Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2012-02-14.

Semiconductor structure and preparation method of semiconductor structure

Номер патента: US20230238273A1. Автор: Jie Bai,Wenli Zhao. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-07-27.

Semiconductor device and method of manufacturing the same

Номер патента: US09449915B2. Автор: Hsu-Sheng Yu,Hong-Ji Lee. Владелец: Macronix International Co Ltd. Дата публикации: 2016-09-20.

Semiconductor devices and methods of fabricating the same

Номер патента: US09640658B2. Автор: Dong Hyuk Kim,DongSuk Shin,Myungsun Kim,Hoi Sung Chung. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-05-02.

Partial, self-biased isolation in semiconductor devices

Номер патента: US09614074B1. Автор: XIN Lin,Hongning Yang,Jiang-Kai Zuo. Владелец: NXP USA Inc. Дата публикации: 2017-04-04.

Integrated circuit device and method of manufacturing the same

Номер патента: US20190140066A1. Автор: Sang-Jin Hyun,Hoon-joo Na,Byoung-Hoon Lee,Sung-in SUH,Min-Woo Song,Chan-hyeong LEE,Hu-Yong Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-05-09.

Layer structures including carbon-based material, methods of manufacturing the layer structures, electronic devices including the layer structures, and electronic apparatuses including the electronic devices

Номер патента: US20230078018A1. Автор: Sangwon Kim,Kyung-Eun Byun,Changseok Lee,Minseok YOO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-03-16.

Semiconductor device and method of fabricating the same

Номер патента: US20200127008A1. Автор: In Su Park,Dong Sun Sheen. Владелец: SK hynix Inc. Дата публикации: 2020-04-23.

Semiconductor device and formation thereof

Номер патента: US09666438B2. Автор: Yu-Hung Lin,Sheng-Hsuan Lin,Chih-Wei Chang,You-Hua Chou. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-05-30.

Semiconductor device comprising metal plug having substantially convex bottom surface

Номер патента: US09397040B2. Автор: Yu-Hung Lin,Sheng-Hsuan Lin,Chih-Wei Chang,You-Hua Chou. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-07-19.

Semiconductor devices including support pattern and methods of fabricating the same

Номер патента: US20220130950A1. Автор: Yoosang Hwang,Sangho Lee,Jae-Hwan CHO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-04-28.

Semiconductor devices including support pattern and methods of fabricating the same

Номер патента: US20210043722A1. Автор: Yoosang Hwang,Sangho Lee,Jae-Hwan CHO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-02-11.

Method of forming carbon nano-tube wire and method of forming wire of semiconductor device using the same

Номер патента: KR100791948B1. Автор: 이선우,윤홍식,이준영,김중현,여인석,변경래. Владелец: 삼성전자주식회사. Дата публикации: 2008-01-04.

Semiconductor devices and methods of fabricating the same

Номер патента: US20150349122A1. Автор: Dong Hyuk Kim,DongSuk Shin,Myungsun Kim,Hoi Sung Chung. Владелец: Individual. Дата публикации: 2015-12-03.

Semiconductor devices and methods of fabricating the same

Номер патента: US20160049512A1. Автор: Dong Hyuk Kim,DongSuk Shin,Myungsun Kim,Hoi Sung Chung. Владелец: Individual. Дата публикации: 2016-02-18.

Semiconductor devices and methods of fabricating the same

Номер патента: US20160218214A1. Автор: Dong Hyuk Kim,DongSuk Shin,Myungsun Kim,Hoi Sung Chung. Владелец: Individual. Дата публикации: 2016-07-28.

Interconnection structure having increased conductive features and method of manufacturing the same

Номер патента: US20210375750A1. Автор: CHEN Chu,Hsih-Yang Chiu. Владелец: Nanya Technology Corp. Дата публикации: 2021-12-02.

Semiconductor device and method of forming patterns for semiconductor device

Номер патента: KR101565796B1. Автор: 박영주,김동찬,김명철,민재호,심재황. Владелец: 삼성전자주식회사. Дата публикации: 2015-11-06.

Method of forming isolation of semiconductor device

Номер патента: KR100798802B1. Автор: 이홍구,박원성. Владелец: 주식회사 하이닉스반도체. Дата публикации: 2008-01-29.

A method of forming contacts of semiconductor device

Номер патента: KR100256058B1. Автор: 허노현. Владелец: 윤종용. Дата публикации: 2000-05-01.

Methods of forming patterns of semiconductor devices

Номер патента: KR102353280B1. Автор: 박석한. Владелец: 삼성전자주식회사. Дата публикации: 2022-01-19.

Method of forming plug of semiconductor device

Номер патента: KR20050011203A. Автор: 김주성. Владелец: 주식회사 하이닉스반도체. Дата публикации: 2005-01-29.

Method of manufacturing a silicon carbide semiconductor device

Номер патента: US20110070723A1. Автор: Yasuyuki Kawada,Takeshi Tawara. Владелец: Fuji Electric Systems Co Ltd. Дата публикации: 2011-03-24.

Method of manufacturing a silicon carbide semiconductor device

Номер патента: US8124510B2. Автор: Yasuyuki Kawada,Takeshi Tawara. Владелец: Fuji Electric Co Ltd. Дата публикации: 2012-02-28.

Method of separating a wafer of semiconductor devices

Номер патента: US09608016B2. Автор: Stefano Schiaffino,Grigoriy Basin,Jipu Lei,Alexander H. Nickel. Владелец: Koninklijke Philips NV. Дата публикации: 2017-03-28.

Silicon carbide semiconductor device and method of manufacturing the same

Номер патента: US09793376B2. Автор: Toshimasa Yamamoto,Jun Morimoto,Yukihiko Watanabe,Narumasa Soejima,Shinichiro Miyahara. Владелец: Toyota Motor Corp. Дата публикации: 2017-10-17.

Manufacturing method of silicon carbide semiconductor device

Номер патента: US09685333B2. Автор: Fumikazu Imai,Tsunehiro Nakajima,Masanobu IWAYA. Владелец: Fuji Electric Co Ltd. Дата публикации: 2017-06-20.

Thin film, method of forming thin film, semiconductor device including thin film, and method of manufacturing semiconductor device

Номер патента: US09425323B2. Автор: Anass Benayad,Kyoung-seok SON,Tae-Sang Kim,Eun-ha Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-08-23.

Epitaxial substrate for semiconductor device, semiconductor device, method of manufacturing epitaxial substrate for semiconductor device, and method of manufacturing semiconductor device

Номер патента: US20130168734A1. Автор: Mitsuhiro Tanaka,Makoto Miyoshi,Mikiya Ichimura. Владелец: NGK Insulators Ltd. Дата публикации: 2013-07-04.

Crystalline semiconductor film, method of manufacturing the same, and semiconductor device

Номер патента: US20040192014A1. Автор: Misako Nakazawa,Naoki Makita,Toshiji Hamatani. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2004-09-30.

Crystalline semiconductor film, method of manufacturing the same, and semiconductor device

Номер патента: US20090253251A1. Автор: Misako Nakazawa,Naoki Makita,Toshiji Hamatani. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2009-10-08.

Method of manufacturing a silicon carbide semiconductor device

Номер патента: US20160372328A1. Автор: Yasuyuki Kawada. Владелец: Fuji Electric Co Ltd. Дата публикации: 2016-12-22.

Semiconductor device and method of fabricating the same

Номер патента: US20230223306A1. Автор: Wei-Lun Huang,Chia-Ling Wang,Ping-Hung Chiang,Ta-wei Chiu,Chia-Wen Lu. Владелец: United Microelectronics Corp. Дата публикации: 2023-07-13.

Semiconductor device and method of fabricating the same

Номер патента: US12100624B2. Автор: Wei-Lun Huang,Chia-Ling Wang,Ping-Hung Chiang,Ta-wei Chiu,Chia-Wen Lu. Владелец: United Microelectronics Corp. Дата публикации: 2024-09-24.

Semiconductor device and method of manufacturing the same

Номер патента: US20140151627A1. Автор: Young Ok Hong,Kyoung A Kim. Владелец: SK hynix Inc. Дата публикации: 2014-06-05.

Semiconductor device and method of fabricating the same

Номер патента: US11856753B2. Автор: Hyun-Jung Lee,Joon-seok Moon,Dongsoo Woo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-12-26.

Memory device and method of manufacturing the same

Номер патента: US20210375720A1. Автор: Nam Jae LEE. Владелец: SK hynix Inc. Дата публикации: 2021-12-02.

Memory device and method of manufacturing the same

Номер патента: US11328981B2. Автор: Nam Jae LEE. Владелец: SK hynix Inc. Дата публикации: 2022-05-10.

Memory device and method of manufacturing the same

Номер патента: US11735500B2. Автор: Nam Jae LEE. Владелец: SK hynix Inc. Дата публикации: 2023-08-22.

Butted contacts and methods of fabricating the same in semiconductor devices

Номер патента: US12094942B2. Автор: Chih-Hao Wang,Cheng-Chi Chuang,Yu-Ming Lin,Li-Zhen YU,Lin-Yu HUANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-17.

Semiconductor device and method of manufacturing the same

Номер патента: WO2024092689A1. Автор: Hui Yan,Chunhua ZHOU,Sichao LI. Владелец: Innoscience (suzhou) Semiconductor Co., Ltd.. Дата публикации: 2024-05-10.

Method of manufacturing conductors for semiconductor device

Номер патента: US20230335545A1. Автор: Ru-Gun Liu,Chih-Ming Lai,Chih-Liang Chen,Ko-Bin Kao,Charles Chew-Yuen Young,Kam-Tou SIO,Shun Li CHEN,Hui-Ting Yang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-10-19.

Power Semiconductor Device and Method of Forming a Power Semiconductor Device

Номер патента: US20200235235A1. Автор: Dainese Matteo,Griebl Erich,Beninger-Bina Markus,Dirnstorfer Ingo. Владелец: . Дата публикации: 2020-07-23.

Method of forming capacitor of semiconductor device by successively forming a dielectric layer and a plate electrode in a single processing chamber

Номер патента: US20060234500A1. Автор: Jong Park. Владелец: Hynix Semiconductor Inc. Дата публикации: 2006-10-19.

Plasma generating device, method of controlling the same, and substrate processing device including the plasma generating device

Номер патента: US09536708B2. Автор: Jong Sik LEE,Hyun Jun Kim,Jeong Hee CHO,Hee Sun Chae,Han Saem RHEE. Владелец: PSK Inc. Дата публикации: 2017-01-03.

Method of forming pattern of semiconductor device

Номер патента: US20090170033A1. Автор: Woo Yung Jung,Guee Hwang Sim. Владелец: Hynix Semiconductor Inc. Дата публикации: 2009-07-02.

Method of manufacturing an MIS-type semiconductor device

Номер патента: US5336361A. Автор: Akiyoshi Tamura,Masatoshi Kitagawa. Владелец: Matsushita Electric Industrial Co Ltd. Дата публикации: 1994-08-09.

Method of selectively depositing glass on semiconductor devices

Номер патента: CA1038329A. Автор: Robert B. Comizzoli. Владелец: RCA Corp. Дата публикации: 1978-09-12.

Method of selectively depositing glass on semiconductor devices

Номер патента: US3895127A. Автор: Robert Benedict Comizzoli. Владелец: RCA Corp. Дата публикации: 1975-07-15.

Method of manufacturing semiconductor structure and semiconductor device etching equipment

Номер патента: US20230014007A1. Автор: Xifei BAO,Liutao ZHOU. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-01-19.

Method of manufacturing a silicon carbide semiconductor device including forming a protective film with a 2-layer structure comprised of silicon and carbon

Номер патента: US09748149B2. Автор: Yasuyuki Kawada. Владелец: Fuji Electric Co Ltd. Дата публикации: 2017-08-29.

Method of manufacturing a silicon carbide semiconductor device

Номер патента: US10510841B2. Автор: Shunichi Nakamura,Akihiko Sugai,Tetsuto INOUE. Владелец: Shindengen Electric Manufacturing Co Ltd. Дата публикации: 2019-12-17.

Silicon carbide semiconductor device and a method of manufacturing a silicon carbide semiconductor device

Номер патента: US10186575B2. Автор: Yasuyuki Kawada,Kazuhiro Mochizuki,Ryoji Kosugi,Hidenori Koketsu,Shiyang Ji. Владелец: Fuji Electric Co Ltd. Дата публикации: 2019-01-22.

Method of manufacturing a silicon carbide semiconductor device

Номер патента: US09450060B2. Автор: Toru Hiyoshi,Yu Saitoh. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2016-09-20.

Method of manufacturing a reverse blocking semiconductor device

Номер патента: US09679892B2. Автор: Hans-Joachim Schulze,Johannes Georg Laven,Christian Jaeger,Roman Baburske. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2017-06-13.

Semiconductor device having polysilicon bit line contact

Номер патента: US7884441B2. Автор: Nam Yoon Kim. Владелец: Dongbu HitekCo Ltd. Дата публикации: 2011-02-08.

Reverse Blocking Semiconductor Device, Semiconductor Device with Local Emitter Efficiency Modification and Method of Manufacturing a Reverse Blocking Semiconductor Device

Номер патента: US20140209973A1. Автор: Hans-Joachim Schulze,Johannes Georg Laven,Christian Jaeger,Roman Baburske. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2014-07-31.

A method of manufacturing a vertical oriented semiconductor device as well as a corresponding vertical oriented semiconductor device obtained by such a method

Номер патента: US20240030307A1. Автор: Falk-Ulrich Stein. Владелец: Nexperia BV. Дата публикации: 2024-01-25.

Semiconductor device with lower contact and lower power structure and method of manufacturing the same

Номер патента: US20240312914A1. Автор: Dong Kwon Kim,Jeongyeon Seo,Hongsik SHIN,Hyonwook RA. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-09-19.

3DIC interconnect devices and methods of forming same

Номер патента: US09455158B2. Автор: Szu-Ying Chen,Dun-Nian Yaung,Tzu-Hsuan Hsu,Jeng-Shyan Lin,Feng-Chi Hung,Shu-Ting Tsai. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-09-27.

Silicon carbide semiconductor device and method of manufacturing a silicon carbide semiconductor device

Номер патента: US11038020B2. Автор: Takumi Fujimoto. Владелец: Fuji Electric Co Ltd. Дата публикации: 2021-06-15.

Method of manufacturing a silicon carbide semiconductor device

Номер патента: US20190252498A1. Автор: Shunichi Nakamura,Akihiko Sugai,Tetsuto INOUE. Владелец: Shindengen Electric Manufacturing Co Ltd. Дата публикации: 2019-08-15.

A method of manufacturing a vertical oriented semiconductor device as well as a corresponding vertical oriented semiconductor device obtained by such a method

Номер патента: EP4310888A1. Автор: Falk-Ulrich Stein. Владелец: Nexperia BV. Дата публикации: 2024-01-24.

Semiconductor device including through vias with different widths and method of manufacturing the same

Номер патента: US20230298937A1. Автор: Jin Woong Kim,Ju Heon YANG. Владелец: SK hynix Inc. Дата публикации: 2023-09-21.

Semiconductor device including cell region stacked on peripheral region and method of fabricating the same

Номер патента: US09666289B2. Автор: Sunghoon Kim,Jae-Eun Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-05-30.

Semiconductor device including air gaps and method of fabricating the same

Номер патента: US09627253B2. Автор: Min-ho Kim. Владелец: SK hynix Inc. Дата публикации: 2017-04-18.

Semiconductor device and method of fabricating the same

Номер патента: US11314919B2. Автор: Bonghyun LEE,Yongdeok Kim,Munjun Seo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-04-26.

Semiconductor device and method of fabricating the same

Номер патента: US20240265188A1. Автор: Bonghyun LEE,Yongdeok Kim,Munjun Seo. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2024-08-08.

Semiconductor device, light emitting device and method of manufacturing same

Номер патента: US09425352B2. Автор: Yong Jin Kim,Dong Kun Lee,Doo Soo Kim. Владелец: LG Siltron Inc. Дата публикации: 2016-08-23.

Semiconductor device and method of manufacturing the same

Номер патента: US20140363974A1. Автор: Duk Sun HAN. Владелец: SK hynix Inc. Дата публикации: 2014-12-11.

Semiconductor device and method of manufacturing the same

Номер патента: US9087791B2. Автор: Duk Sun HAN. Владелец: SK hynix Inc. Дата публикации: 2015-07-21.

Testing, manufacturing, and packaging methods for semiconductor devices

Номер патента: US09852957B2. Автор: Hsien-Wei Chen,Wei-Cheng Wu,Der-Chyang Yeh,Chin-Hsien Chen,An-Jhih Su,Li-Hsien HUANG,Yan-Fu Lin,Yung-Shou Cheng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-12-26.

Semiconductor device and formation thereof

Номер патента: US09991169B2. Автор: Mark Van Dal,Blandine Duriez. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-06-05.

Semiconductor device and formation thereof

Номер патента: US09450096B2. Автор: Mark Van Dal,Blandine Duriez. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-09-20.

Patterns of a semiconductor device and method of manufacturing the same

Номер патента: US9318369B2. Автор: Je-min Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-04-19.

Patterns of a semiconductor device and method of manufacturing the same

Номер патента: US20140312455A1. Автор: Je-min Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2014-10-23.

Interconnection structure and method of manufacturing the same, and electronic device including the interconnection structure

Номер патента: US12027457B2. Автор: Huilong Zhu. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2024-07-02.

Semiconductor device with fully self-aligned local interconnects, and method for fabricating the device

Номер патента: US20020098672A1. Автор: Theodore Houston. Владелец: Individual. Дата публикации: 2002-07-25.

Interconnection structure and method of manufacturing the same, and electronic device including the interconnection structure

Номер патента: US20240347445A1. Автор: Huilong Zhu. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2024-10-17.

Semiconductor device structure with magnetic element

Номер патента: US12074193B2. Автор: Chen-Shien Chen,Hon-Lin Huang,Chin-Yu Ku,Wei-Li Huang,Chih-Hung Su,Kuang-Yi Wu,Chi-Cheng Chen,Chun-Yi Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-27.

Semiconductor device structure with magnetic element

Номер патента: US20230238422A1. Автор: Chen-Shien Chen,Hon-Lin Huang,Chin-Yu Ku,Wei-Li Huang,Chih-Hung Su,Kuang-Yi Wu,Chi-Cheng Chen,Chun-Yi Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-07-27.

Semiconductor device and formation thereof

Номер патента: US09530736B2. Автор: Yu-Hung Lin,Sheng-Hsuan Lin,Chih-Wei Chang,You-Hua Chou. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-12-27.

Method of forming interconnection for semiconductor device

Номер патента: TW383478B. Автор: Dong-won Kim,Yong-Sup Hwang,Seung-Yun Lee,Chong-Ook Park,Sa-Kyun Rha. Владелец: LG Semicon Co Ltd. Дата публикации: 2000-03-01.

Methods of forming metal wiring of semiconductor devices

Номер патента: US20040132283A1. Автор: Dong-Ki Jeon,Jae-Won Han. Владелец: Anam Semiconductor Inc. Дата публикации: 2004-07-08.

Semiconductor device and method of fabricating the same

Номер патента: US11995391B2. Автор: Bonghyun LEE,Yongdeok Kim,Munjun Seo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-05-28.

Multilayered wiring structure, method of forming buried wiring, semiconductor device, method of manufacturing semiconductor device, semiconductor mounted device, and method of manufacturing semiconductor mounted device

Номер патента: US20050170641A1. Автор: Seiichi Kondo,Kaori Misawa. Владелец: Semiconductor Leading Edge Technologies Inc. Дата публикации: 2005-08-04.

Semiconductor device and method for manufacturing the same

Номер патента: US20200161219A1. Автор: Hsih-Yang Chiu. Владелец: Nanya Technology Corp. Дата публикации: 2020-05-21.

Testing, Manufacturing, and Packaging Methods for Semiconductor Devices

Номер патента: US20170345726A1. Автор: Hsien-Wei Chen,Wei-Cheng Wu,Der-Chyang Yeh,Chin-Hsien Chen,An-Jhih Su,Li-Hsien HUANG,Yan-Fu Lin,Yung-Shou Cheng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-11-30.

Metal contact structure and method of forming the same in a semiconductor device

Номер патента: US11854874B2. Автор: Yu-Hung Lin,Sheng-Hsuan Lin,Chih-Wei Chang,You-Hua Chou. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-12-26.

Semiconductor device and method of manufacturing the same

Номер патента: US20200176358A1. Автор: Hsih-Yang Chiu. Владелец: Nanya Technology Corp. Дата публикации: 2020-06-04.

Metal Contact Structure and Method of Forming the Same in a Semiconductor Device

Номер патента: US20240087953A1. Автор: Yu-Hung Lin,Sheng-Hsuan Lin,Chih-Wei Chang,You-Hua Chou. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-03-14.

Method of fabricating recess channel in semiconductor device

Номер патента: TWI324368B. Автор: Tae-Woo Jung. Владелец: Hynix Semiconductor Inc. Дата публикации: 2010-05-01.

Metal Contact Structure and Method of Forming the Same

Номер патента: US20150311150A1. Автор: Yu-Hung Lin,Sheng-Hsuan Lin,Chih-Wei Chang,You-Hua Chou. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2015-10-29.

Silicon Carbide Semiconductor Device Having a Metal Adhesion and Barrier Structure and a Method of Forming Such a Semiconductor Device

Номер патента: US20200013722A1. Автор: Matthias Müller,Hans-Joachim Schulze,Roman Roth,Frank Hille,Holger Schulze,Carsten Schaeffer,Oliver Humbel,Frank Umbach,Ravi Keshav Joshi,Michael Fugger,Thomas Laska,Juergen Steinbrenner. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2020-01-09.

Semiconductor Device Having a Metal Adhesion and Barrier Structure and a Method of Forming Such a Semiconductor Device

Номер патента: US20170271268A1. Автор: Schulze Hans-Joachim,Schaeffer Carsten,Mueller Matthias,HILLE Frank,SCHULZE Holger,Steinbrenner Juergen,Joshi Ravi Keshav,Humbel Oliver,Umbach Frank,Roth Roman,Fugger Michael,Laska Thomas. Владелец: . Дата публикации: 2017-09-21.

Metallization stack and method of manufacturing the same, and electronic device including metallization stack

Номер патента: US20230005836A1. Автор: Huilong Zhu. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2023-01-05.

Method of forming contact and semiconductor device manufactured by using the method

Номер патента: US20130277848A1. Автор: Ki Jun Yun. Владелец: Dongbu HitekCo Ltd. Дата публикации: 2013-10-24.

METHOD OF FORMING PATTERN OF SEMICONDUCTOR DEVICE

Номер патента: US20150118852A1. Автор: Kang Yool,Lee Hyung-Rae,KWON Seong-Ji. Владелец: . Дата публикации: 2015-04-30.

METHOD OF FORMING PATTERN OF SEMICONDUCTOR DEVICE

Номер патента: US20170345710A1. Автор: Kim Ji-young,SHIN Sang-Chul,KIM Chang-Hwan,PARK Sang-Oh. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2017-11-30.

Method of forming plug of semiconductor device

Номер патента: KR100515370B1. Автор: 박진우,이한춘. Владелец: 동부아남반도체 주식회사. Дата публикации: 2005-09-14.

Method of forming interconnection of semiconductor device

Номер патента: KR0155847B1. Автор: 김창규. Владелец: 김광호. Дата публикации: 1998-12-01.

Method of making a plurality of semiconductor devices

Номер патента: US09859184B2. Автор: Hans-Martin Ritter,Frank Burmeister. Владелец: Nexperia BV. Дата публикации: 2018-01-02.

Semiconductor device having semiconductor regions of different conductivity types isolation by field oxide, and method of manufacturing the same

Номер патента: KR100220261B1. Автор: 아쓰시 가와사끼,고헤이 에구찌,가쓰끼 하자마,후미따까 스가야. Владелец: 신닛뽄세이테쯔 가부시키가이샤. Дата публикации: 1999-09-15.

Single crystalline structure, method of forming the same, semiconductor device having the single crystalline structure, and method of manufacturing the semiconductor device

Номер патента: US20060157708A1. Автор: Hye-Soo Shin. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2006-07-20.

Method of Forming Pattern of Semiconductor Device

Номер патента: KR101359796B1. Автор: 이승훈,이근수. Владелец: 에스케이하이닉스 주식회사. Дата публикации: 2014-02-10.

[method of forming ldd of semiconductor devices]

Номер патента: US20040229416A1. Автор: Ming-Sung Shih. Владелец: AU OPTRONICS CORP. Дата публикации: 2004-11-18.

Method of manufacturing a super junction semiconductor device and super junction semiconductor device

Номер патента: US9954093B2. Автор: Hans Weber. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2018-04-24.

Method of manufacturing a super junction semiconductor device and super junction semiconductor device

Номер патента: US09954093B2. Автор: Hans Weber. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2018-04-24.

Methods of forming gates of semiconductor devices

Номер патента: US20140235047A1. Автор: Bo-Un Yoon,Jong-Won Lee,Seung-jae Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2014-08-21.

Methods of Forming Gates of Semiconductor Devices

Номер патента: US20120088358A1. Автор: Bo-Un Yoon,Jong-Won Lee,Seung-jae Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2012-04-12.

Methods of forming gates of semiconductor devices

Номер патента: US8962415B2. Автор: Bo-Un Yoon,Jong-Won Lee,Seung-jae Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2015-02-24.

Vertical Power Semiconductor Device, Semiconductor Wafer or Bare-Die Arrangement, Carrier, and Method of Manufacturing a Vertical Power Semiconductor Device

Номер патента: US20210167195A1. Автор: Hans-Joachim Schulze,Andre Brockmeier,Francisco Javier Santos Rodriguez. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2021-06-03.

Method of detecting failure of a semiconductor device

Номер патента: US20190385918A1. Автор: ZHAN Zhan,Ji-Young Choi,Ju-Hyun Kim,Hwa-Sung Rhee,Sung-Gun Kang,Min-Seob KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-12-19.

Cmos device, method of manufacturing cmos device, and semiconductor memory device including cmos device

Номер патента: US20240074175A1. Автор: Dong Uk Lee,Hae Chang Yang. Владелец: SK hynix Inc. Дата публикации: 2024-02-29.

Method of making silicon-on-sapphire semiconductor devices

Номер патента: US4775641A. Автор: Glenn W. Cullen,Michael T. Duffy. Владелец: General Electric Co. Дата публикации: 1988-10-04.

Method of Manufacturing a Super Junction Semiconductor Device and Super Junction Semiconductor Device

Номер патента: US20180006147A1. Автор: Hans Weber. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2018-01-04.

Method of fabricating hybrid impact-ionization semiconductor device

Номер патента: US20110227161A1. Автор: Ming Zhu,Lee-Wee Teo,Harry Hak-Lay Chuang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2011-09-22.

Method of manufacturing an insulated gate semiconductor device having a spacer extension

Номер патента: US5879999A. Автор: Robert B. Davies,Heemyong Park,Vida Ilderem. Владелец: Motorola Inc. Дата публикации: 1999-03-09.

Methods of forming patterns for semiconductor device structures

Номер патента: US20140205952A1. Автор: Yuan He,Scott Light,Michael Hyatt,Michael A. Many. Владелец: Micron Technology Inc. Дата публикации: 2014-07-24.

Methods of forming patterns for semiconductor device structures

Номер патента: US20160048074A1. Автор: Scott L. Light,Yuan He,Michael Hyatt,Michael A. Many. Владелец: Micron Technology Inc. Дата публикации: 2016-02-18.

Methods of forming patterns for semiconductor device structures

Номер патента: US09465287B2. Автор: Scott L. Light,Yuan He,Michael Hyatt,Michael A. Many. Владелец: Micron Technology Inc. Дата публикации: 2016-10-11.

Substrate structure, complementary metal oxide semiconductor device, and method of manufacturing complementary metal oxide semiconductor device

Номер патента: US09570359B2. Автор: Mohammad Rakib Uddin,Myoung-Jae Lee,Sang-Moon Lee,Sung-Hun Lee,Seong-Ho Cho,Moon-seung YANG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-02-14.

Method of manufacturing semiconductor electrode and semiconductor device provided with electrodes manufactured by the method

Номер патента: US20040033683A1. Автор: Kenji Tanaka,Hirofumi Koike,Kazuya Suzuki,Kouichi Asai,Kazutoshi Sakai,Shunji Yoshikane. Владелец: Fuji Machine Manufacturing Co Ltd. Дата публикации: 2004-02-19.

Semiconductor devices, methods of manufacture thereof, and packaged semiconductor devices

Номер патента: US09646923B2. Автор: Chen-Shien Chen,Mirng-Ji Lii,Tin-Hao Kuo,Yu-Jen Tseng,Yen-Liang Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-05-09.

Group-iii nitride semiconductor device, epitaxial substrate, and method of fabricating group-iii nitride semiconductor device

Номер патента: US20120299010A1. Автор: Masaki Ueno,Takao Nakamura,Takashi Kyono,Katsushi Akita,Yusuke Yoshizumi,Takamichi Sumitomo,Yohei Enya. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2012-11-29.

Method of manufacturing semiconductor wafer and semiconductor device

Номер патента: US20240363363A1. Автор: Haruo Sudo,Ken Hayakawa. Владелец: GlobalWafers Japan Co Ltd. Дата публикации: 2024-10-31.

Method of forming metal layer, semiconductor device and method of fabricating same

Номер патента: US20200232089A1. Автор: Chong Liu,Jike WU,Xiuliang CAO. Владелец: Shanghai Huahong Grace Semiconductor Manufacturing Corp. Дата публикации: 2020-07-23.

Method of fabrication of adjacent coplanar semiconductor devices

Номер патента: US5376229A. Автор: Steven D. Lester,Jeffrey N. Miller,Danny E. Mars. Владелец: Hewlett Packard Co. Дата публикации: 1994-12-27.

Method of forming capacitor in semiconductor device by using a polysilicon pattern in a trapezoid shape

Номер патента: US20040002189A1. Автор: Byung-Jun Park. Владелец: Hynix Semiconductor Inc. Дата публикации: 2004-01-01.

Method of manufacturing metal oxide film and display device including metal oxide film

Номер патента: US20190115409A1. Автор: Dong Kyun KO,Woo Jin Kim,Keun Hee PARK,Sung Chul Kim,Myung Soo Huh,Cheol Lae Roh. Владелец: Samsung Display Co Ltd. Дата публикации: 2019-04-18.

Low cost method of fabricating shallow junction, Schottky semiconductor devices

Номер патента: US5635414A. Автор: Jun Wu,Joseph Chan,Gregory Zakaluk,Dennis Garbis,Willem Einthoven,Jack Eng,John Amato. Владелец: Individual. Дата публикации: 1997-06-03.

Semiconductor wafer, method of manufacturing the same and semiconductor device

Номер патента: US20030102530A1. Автор: Masahiro Inohara,Takeo Nakayama,Masahiko Matsumoto,Kunihiro Kasai,Hisato Oyamatsu,Yasuhiro Fukaura. Владелец: Toshiba Corp. Дата публикации: 2003-06-05.

Methods of fabricating a capacitor and semiconductor device

Номер патента: US20230107346A1. Автор: Hyunjun Kim,Yukyung Shin,Cheoljin Cho,Changhwa JUNG,Jongbeom SEO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-04-06.

Method of forming pattern for semiconductor device

Номер патента: US8962484B2. Автор: Minghsing Tsai,Syun-Ming Jang,Jyu-Horng Shieh,Chih-Yuan Ting,Chia Ying Lee. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2015-02-24.

Method of forming pattern of semiconductor device

Номер патента: US10553429B2. Автор: Hyun Chang Lee,Hyun Jae Kang,Sung Sik PARK,Boo Hyun HAM,Yong Kug BAE,Kwang Sub YOON,Bum Joon YOUN. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-02-04.

Semiconductor device and method of manufacturing the same

Номер патента: US20220223620A1. Автор: Moon Sik SEO,Gil Bok CHOI. Владелец: SK hynix Inc. Дата публикации: 2022-07-14.

Method of manufacturing silicon carbide semiconductor device by using protective films to activate dopants in the silicon carbide semiconductor device

Номер патента: US09691616B2. Автор: Taku Horii. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2017-06-27.

Semiconductor devices and methods of manufacturing the same

Номер патента: US09929160B1. Автор: Sung-dae Suk,Seungmin Song,Yong-Suk Tak,Juri LEE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-03-27.

Method for manufacturing silicon carbide semiconductor device and silicon carbide semiconductor device

Номер патента: US09842738B2. Автор: Kazuyuki Sugahara,Hiroaki Okabe,Yosuke Nakanishi,Takaaki TOMINAGA,Motoru YOSHIDA. Владелец: Mitsubishi Electric Corp. Дата публикации: 2017-12-12.

Graphene layer, method of forming the same, device including graphene layer and method of manufacturing the device

Номер патента: US09660036B2. Автор: Jaeho Lee,Hyowon KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-05-23.

Method of manufacturing thin film semiconductor device

Номер патента: US09328414B2. Автор: Masafumi Kunii. Владелец: Japan Display Inc. Дата публикации: 2016-05-03.

Nanocrystal silicon layer structures formed using plasma deposition technique, methods of forming the same, nonvolatile memory devices having the nanocrystal silicon layer structures, and methods of fabricating the nonvolatile memory devices

Номер патента: US8110485B2. Автор: SUNG Wook Jung,Kyung Soo Jang,Jae Hyun Cho,Byoung Deog Choi,Jun Sin Yi. Владелец: Sungkyunkwan University Foundation For Corporate Collaboration. Дата публикации: 2012-02-07.

Method of fabricating semiconductor device

Номер патента: US09972539B2. Автор: Chih-Chung Wang,Wen-Fang Lee,Shin-Hung Li,Nien-Chung Li,Kuan-Chuan Chen. Владелец: United Microelectronics Corp. Дата публикации: 2018-05-15.

Semiconductor device and method of fabricating the same

Номер патента: US09653460B1. Автор: Chih-Chung Wang,Wen-Fang Lee,Shin-Hung Li,Nien-Chung Li,Kuan-Chuan Chen. Владелец: United Microelectronics Corp. Дата публикации: 2017-05-16.

Method of manufacturing silicon carbide semiconductor device

Номер патента: US09613809B2. Автор: Taku Horii,Masaki Kijima. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2017-04-04.

Semiconductor device and method of manufacturing the same

Номер патента: US11315944B2. Автор: Moon Sik SEO,Gil Bok CHOI. Владелец: SK hynix Inc. Дата публикации: 2022-04-26.

Semiconductor device and method of manufacturing the same

Номер патента: US11729981B2. Автор: Moon Sik SEO,Gil Bok CHOI. Владелец: SK hynix Inc. Дата публикации: 2023-08-15.

Finfet devices and methods of forming the same

Номер патента: US20230411218A1. Автор: Chih-Hao Wang,Chun-Hsiung Lin,Kuo-Cheng Ching,Jui-Chien Huang,Pei-Hsun Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-12-21.

Semiconductor device and method of manufacturing the same

Номер патента: US20200395372A1. Автор: Moon Sik SEO,Gil Bok CHOI. Владелец: SK hynix Inc. Дата публикации: 2020-12-17.

FinFET devices and methods of forming the same

Номер патента: US11837506B2. Автор: Chih-Hao Wang,Chun-Hsiung Lin,Kuo-Cheng Ching,Jui-Chien Huang,Pei-Hsun Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-12-05.

Finfet devices and methods of forming the same

Номер патента: US20200135584A1. Автор: Chih-Hao Wang,Chun-Hsiung Lin,Kuo-Cheng Ching,Jui-Chien Huang,Pei-Hsun Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-04-30.

Germanium nanosheets and methods of forming the same

Номер патента: US20200006067A1. Автор: Hung-Hsiang Cheng. Владелец: National Taiwan University NTU. Дата публикации: 2020-01-02.

Method of manufacturing silicon carbide semiconductor device

Номер патента: US20160240380A1. Автор: Taku Horii. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2016-08-18.

Manufacturing method of vertical GaN-based semiconductor device and vertical GaN-based semiconductor device

Номер патента: US10903352B2. Автор: Katsunori Ueno,Masaharu Edo,Shinya Takashima. Владелец: Fuji Electric Co Ltd. Дата публикации: 2021-01-26.

Electronic device having graphene-semiconductor multi-junction and method of manufacturing the electronic device

Номер патента: US09685516B2. Автор: Sangwoo Kim,Hyeonjin Shin,Eunbi Cho,Hyejung PARK,Kanghyuck LEE. Владелец: Sungkyunkwan University Research and Business Foundation. Дата публикации: 2017-06-20.

Nanocrystal silicon layer structures formed using plasma deposition technique, methods of forming the same, nonvolatile memory devices having the nanocrystal silicon layer structures, and methods of fabricating the nonvolatile memory devices

Номер патента: US20100148181A1. Автор: SUNG Wook Jung,Kyung Soo Jang,Jae Hyun Cho,Byoung Deog Choi,Jun Sin Yi. Владелец: Sungkyunkwan University Foundation For Corporate Collaboration. Дата публикации: 2010-06-17.

Method of manufacturing silicon carbide semiconductor device

Номер патента: US09941362B2. Автор: Masayuki Miyazaki,Hidenao Kuribayashi. Владелец: Fuji Electric Co Ltd. Дата публикации: 2018-04-10.

Silicon carbide semiconductor device and method of manufacturing the silicon carbide semiconductor device

Номер патента: US20180175147A1. Автор: Shinsuke Harada,Yusuke Kobayashi,Takahito Kojima,Naoyuki Ohse. Владелец: Fuji Electric Co Ltd. Дата публикации: 2018-06-21.

Silicon carbide epitaxial substrate, method of manufacturing thereof, silicon carbide semiconductor device, and method of manufacturing thereof

Номер патента: US11201218B2. Автор: Takeshi Tawara. Владелец: Fuji Electric Co Ltd. Дата публикации: 2021-12-14.

Method of forming an oxide semiconductor device and method of manufacturing a display device including an oxide semiconductor device

Номер патента: KR102210672B1. Автор: 김현식,김현재,안병두,모연곤,임지훈,김연홍. Владелец: 연세대학교 산학협력단. Дата публикации: 2021-02-04.

Metal oxide semiconductor (mos) controlled devices and methods of making the same

Номер патента: US20190006505A1. Автор: Kevin Matocha,Sauvik CHOWDHURY,Kiran CHATTY,John Nowak. Владелец: Monolith Semiconductor Inc. Дата публикации: 2019-01-03.

Metal oxide semiconductor (mos) controlled devices and methods of making the same

Номер патента: US20190334025A1. Автор: Kevin Matocha,Sauvik CHOWDHURY,Kiran CHATTY,John Nowak. Владелец: Monolith Semiconductor Inc. Дата публикации: 2019-10-31.

Metal oxide semiconductor (mos) controlled devices and methods of making the same

Номер патента: WO2019005464A1. Автор: Kevin Matocha,Sauvik CHOWDHURY,Kiran CHATTY,John Nowak. Владелец: Monolith Semiconductor Inc.. Дата публикации: 2019-01-03.

Metal oxide semiconductor (mos) controlled devices and methods of making the same

Номер патента: US20200176596A1. Автор: Kevin Matocha,Sauvik CHOWDHURY,Kiran CHATTY,John Nowak. Владелец: Monolith Semiconductor Inc. Дата публикации: 2020-06-04.

Deposition method, semiconductor device and method of favricating the same

Номер патента: US20210098458A1. Автор: Cheng-I Lin,Chi-On CHUI,Ming-Ho Lin,Chun-Heng Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-04-01.

Vertical Power Semiconductor Device and Manufacturing Method

Номер патента: US20230352531A1. Автор: Hans-Joachim Schulze,Moriz Jelinek,Christian Jaeger,Daniel Schloegl,Benedikt Stoib. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2023-11-02.

Method of manufacturing silicon carbide substrate, silicon carbide single-crystal substrate and silicon carbide semiconductor device

Номер патента: US20230369411A1. Автор: Hirofumi Yamamoto,Takashi Sakurada,Makoto Sasaki,Naoki Matsumoto,Tetsuro Kondo,Taro Nishiguchi. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2023-11-16.

Method of manufacturing silicon carbide semiconductor device

Номер патента: US20190157398A1. Автор: Makoto Utsumi,Fumikazu Imai,Yasuhiko OONISHI. Владелец: Fuji Electric Co Ltd. Дата публикации: 2019-05-23.

Semiconductor device and method of manufacturing the same

Номер патента: US20240120403A1. Автор: Kwanghee Lee,Jeeeun YANG,Sangwook Kim,Moonil Jung,EunTae KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-04-11.

Semiconductor device and method of fabricating the same

Номер патента: US9337121B2. Автор: Chi Hoon Jun,Sang Choon KO,Young Rak PARK,Jae Kyoung Mun,Eun Soo Nam,Seok-Hwan Moon,Woojin CHANG,Sung-Bum BAE,Je Ho NA. Владелец: Electronics and Telecommunications Research Institute ETRI. Дата публикации: 2016-05-10.

Vertical nanowire semiconductor device and manufacturing method therefor

Номер патента: US11699588B2. Автор: Ying Hong. Владелец: Individual. Дата публикации: 2023-07-11.

Vertical nanowire semiconductor device and manufacturing method therefor

Номер патента: US20220208548A1. Автор: Ying Hong. Владелец: Individual. Дата публикации: 2022-06-30.

Electronic device having graphene-semiconductor multi-junction and method of manufacturing the electronic device

Номер патента: US20150332920A1. Автор: Sangwoo Kim,Hyeonjin Shin,Eunbi Cho,Hyejung PARK,Kanghyuck LEE. Владелец: Sungkyunkwan University Research and Business Foundation. Дата публикации: 2015-11-19.

METHODS OF FORMING A FINFET SEMICONDUCTOR DEVICE SO AS TO REDUCE PUNCH-THROUGH LEAKAGE CURRENTS AND THE RESULTING DEVICE

Номер патента: US20150279963A1. Автор: Cheng Kangguo,Khakifirooz Ali,Xie Ruilong,Cai Xiuyu. Владелец: . Дата публикации: 2015-10-01.

Semiconductor device and method of forming patterns for semiconductor device

Номер патента: KR101435520B1. Автор: 김범수,김동찬,권오익,김명철,민재호. Владелец: 삼성전자주식회사. Дата публикации: 2014-09-01.

Electronic device and method of manufacturing the same

Номер патента: EP3843124A1. Автор: Hyangsook LEE,Junghwa KIM,Jinseong Heo,Sanghyun JO,Taehwan MOON,Eunha Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-06-30.

Electronic device and method of manufacturing the same

Номер патента: US20210193811A1. Автор: Hyangsook LEE,Junghwa KIM,Jinseong Heo,Sanghyun JO,Taehwan MOON,Eunha Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-06-24.

Electronic device and method of manufacturing the same

Номер патента: US11848366B2. Автор: Hyangsook LEE,Junghwa KIM,Jinseong Heo,Sanghyun JO,Taehwan MOON,Eunha Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-12-19.

Electronic device and method of manufacturing the same

Номер патента: US20210408255A1. Автор: Hyangsook LEE,Junghwa KIM,Jinseong Heo,Sanghyun JO,Taehwan MOON,Eunha Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-12-30.

Oxide semiconductor transistor, method of manufacturing the same, and memory device including oxide semiconductor transistor

Номер патента: US20220384656A1. Автор: Kwanghee Lee,Sangwook Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-12-01.

METHOD OF FORMING PATTERNS OF SEMICONDUCTOR DEVICE

Номер патента: US20150340459A1. Автор: LEE CHUL. Владелец: . Дата публикации: 2015-11-26.

Methods of making passivating layers for semiconductor devices

Номер патента: GB1532456A. Автор: . Владелец: Sony Corp. Дата публикации: 1978-11-15.

Method of fabricating a metal gate semiconductor device

Номер патента: US20130260547A1. Автор: Ming Zhu,Bao-Ru Young,Hak-Lay Chuang,Sheng-Chen Chung,Jyun-Ming Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2013-10-03.

Method of making a charge compensation semiconductor device using direct bonding and corresponding device

Номер патента: EP1119871A1. Автор: Raymond J. Grover. Владелец: KONINKLIJKE PHILIPS ELECTRONICS NV. Дата публикации: 2001-08-01.

Tunnel insulation layer structures, methods of manufacturing the same, and vertical memory devices including the same

Номер патента: US20150279955A1. Автор: Jae-Young Ahn,Ki-Hyun Hwang,Young-Jin Noh,Kwang-Min Park,Jae-Ho Choi,Bi-O KIM,Eun-Yeoung CHOI,Ju-Mi YUN. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2015-10-01.

Tunnel insulation layer structures, methods of manufacturing the same, and vertical memory devices including the same

Номер патента: US09698233B2. Автор: Jae-Young Ahn,Ki-Hyun Hwang,Young-Jin Noh,Kwang-Min Park,Jae-Ho Choi,Bi-O KIM,Eun-Yeoung CHOI,Ju-Mi YUN. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-07-04.

Method of forming sacrificial self-aligned features for assisting die-to-die and die-to-wafer direct bonding

Номер патента: US20210183814A1. Автор: Mark S. Rodder,Wei-E Wang,Vassilios Gerousis. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-06-17.

Fabrication method of layer structure for mounting semiconductor device

Номер патента: US20180233442A1. Автор: Hung-Chi Chen,Fang-Lin Tsai,Yi-Feng Chang,Yi-Min Fu,Cheng-Jen Liu. Владелец: Siliconware Precision Industries Co Ltd. Дата публикации: 2018-08-16.

Method for production of semiconductor device

Номер патента: US6087261A. Автор: Toshiya Suzuki,Nobuyuki Nishikawa. Владелец: Fujitsu Ltd. Дата публикации: 2000-07-11.

Three-dimensional memory device and methods of making the same using replacement drain select gate electrodes

Номер патента: US20190326306A1. Автор: Kiyohiko Sakakibara,Kenji Sugiura,Zhixin Cui,Mitsuteru Mushiga,Hisakazu Otoi. Владелец: SanDisk Technologies LLC. Дата публикации: 2019-10-24.

Method of forming oxide layer using atomic layer deposition method and method of forming capacitor of semiconductor device using the same

Номер патента: US7151039B2. Автор: Jae-hyun Yeo,In-sung Park,Yun-jung Lee,Ki-yeon Park,Gi-Vin Im. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2006-12-19.

Method of forming material using atomic layer deposition and method of forming capacitor of semiconductor device using the same

Номер патента: US20060234517A1. Автор: Sung-Tae Kim,Young-sun Kim,Jae-hyun Yeo,In-sung Park,Gi-Vin Im. Владелец: Individual. Дата публикации: 2006-10-19.

Method of making a capacitor to semiconductor device

Номер патента: KR960010003B1. Автор: Sung-Wook Lee,Suk-Bin Han. Владелец: LG Semicon Co Ltd. Дата публикации: 1996-07-25.

METHOD OF FORMING LAYOUT OF SEMICONDUCTOR DEVICE

Номер патента: US20200111791A1. Автор: Lee Sho-Shen,Chen Yi-Ting,Wang Chia-Hung,Chen Chien-Hao,Liou En-Chiuan,Lee Jhao-Hao. Владелец: . Дата публикации: 2020-04-09.

METHODS OF FORMING PATTERNS OF SEMICONDUCTOR DEVICES

Номер патента: US20170129972A1. Автор: Kim Eun-Sung,Yi Shi-Yong,Park Jeong-ju,Matsumiya Tasuku,Ohmori Katsumi,LEE KYEONG-MI,KWON SEUNG-CHUL,KUROSAWA Tsuyosh. Владелец: . Дата публикации: 2017-05-11.

METHOD OF FORMING PATTERN OF SEMICONDUCTOR DEVICE

Номер патента: US20170148643A1. Автор: LEE Hyun Chang,PARK Sung Sik,HAM Boo Hyun,KANG Hyun Jae,BAE Yong Kug,YOON Kwang Sub,YOUN Bum Joon. Владелец: . Дата публикации: 2017-05-25.

Method of Forming Pattern of Semiconductor Device

Номер патента: KR100891247B1. Автор: 김서민,임창문. Владелец: 주식회사 하이닉스반도체. Дата публикации: 2009-04-01.

Method of forming capacitor of semiconductor device

Номер патента: CN1722384A. Автор: 李起正. Владелец: Hynix Semiconductor Inc. Дата публикации: 2006-01-18.

Method of forming pattern of semiconductor device

Номер патента: US9892918B2. Автор: Eun-Sung Kim,Shi-Yong Yi,Kyeong-Mi Lee,Seung-chul Kwon,Jeong-Ju Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-02-13.

Method of forming pattern of semiconductor device

Номер патента: US7553771B2. Автор: Seo Min Kim,Chang Moon Lim. Владелец: Hynix Semiconductor Inc. Дата публикации: 2009-06-30.

Method of Forming Pattern of Semiconductor Device

Номер патента: US20090269935A1. Автор: Chul Chan Choi. Владелец: Hynix Semiconductor Inc. Дата публикации: 2009-10-29.

Method of Forming Patterns of Semiconductor Device

Номер патента: US20100021849A1. Автор: Woo Yung Jung,Guee Hwang Sim. Владелец: Hynix Semiconductor Inc. Дата публикации: 2010-01-28.

Semiconductor device and method of forming components for semiconductor device

Номер патента: EP4434086A1. Автор: Lim Chee Chian,Stanley Lai,Barry Lin,Yew-Khuan Teoh,Tuang KWANG HWEE. Владелец: Vishay Siliconix LLC. Дата публикации: 2024-09-25.

Methods of forming a compound semiconductor device including a diffusion region

Номер патента: US20100144123A1. Автор: Yong-Hwan Kwon,Mi-Ran Park,Dae Kon Oh,Bongki Mheen,Jae-Sik SIM. Владелец: Electronics and Telecommunications Research Institute ETRI. Дата публикации: 2010-06-10.

Method of forming a packaged semiconductor device having enhanced wettable flank and structure

Номер патента: US20240203839A1. Автор: Pedro Joel Rivera-Marty. Владелец: Amkor Technology Singapore Holding Pte Ltd. Дата публикации: 2024-06-20.

Signal path and method of manufacturing a multiple-patterned semiconductor device

Номер патента: US20140189615A1. Автор: Douglas M. Dewanz,David P. Paulsen,II John E. Sheets,David H. Allen. Владелец: International Business Machines Corp. Дата публикации: 2014-07-03.

Signal path and method of manufacturing a multiple-patterned semiconductor device

Номер патента: US20140183603A1. Автор: Douglas M. Dewanz,David P. Paulsen,II John E. Sheets,David H. Allen. Владелец: International Business Machines Corp. Дата публикации: 2014-07-03.

Method of forming a packaged semiconductor device using ganged conductive connective assembly and structure

Номер патента: US20180350735A1. Автор: Siang Miang Yeo,Mohd Hasrul Bin ZULKIFLI. Владелец: Amkor Technology Inc. Дата публикации: 2018-12-06.

Methods of reinforcing integrated circuitry of semiconductor devices and related semiconductor devices and packages

Номер патента: US20190393110A1. Автор: AJAY Kumar,John House,Hyunsoo Yeom. Владелец: Microchip Technology Inc. Дата публикации: 2019-12-26.

Board for mounting BGA semiconductor chip thereon, semiconductor device, and methods of fabricating such board and semiconductor device

Номер патента: US20050156326A1. Автор: Toshihide Ito. Владелец: NEC Toppan Circuit Solutions Inc. Дата публикации: 2005-07-21.

Method of forming a packaged semiconductor device having enhanced wettable flank and structure

Номер патента: US11862539B2. Автор: Pedro Joel Rivera-Marty. Владелец: Amkor Technology Singapore Holding Pte Ltd. Дата публикации: 2024-01-02.

Method of manufacturing a dual gate semiconductor device with a poly-metal electrode

Номер патента: US6881618B2. Автор: Naoki Yamamoto. Владелец: Renesas Technology Corp. Дата публикации: 2005-04-19.

Method of forming a packaged semiconductor device using ganged conductive connective assembly and structure

Номер патента: US20180269147A1. Автор: Siang Miang Yeo,Mohd Hasrul Bin ZULKIFLI. Владелец: Amkor Technology Inc. Дата публикации: 2018-09-20.

Methods of forming highly scaled semiconductor devices using a disposable spacer technique

Номер патента: US20130095620A1. Автор: Jan Hoentschel,Stefan Flachowsky,Shiang Yang Ong. Владелец: Globalfoundries Inc. Дата публикации: 2013-04-18.

Signal path and method of manufacturing a multiple-patterned semiconductor device

Номер патента: US20140183659A1. Автор: Douglas M. Dewanz,David P. Paulsen,II John E. Sheets,David H. Allen. Владелец: International Business Machines Corp. Дата публикации: 2014-07-03.

Chip-on-lead semiconductor device, and corresponding method of manufacturing chip-on-lead semiconductor devices

Номер патента: US11887959B2. Автор: Michele DERAI,Guendalina Catalano. Владелец: STMICROELECTRONICS SRL. Дата публикации: 2024-01-30.

Methods of designing and fabricating a semiconductor device based on determining a least common multiple between select layout pitches

Номер патента: US11854976B2. Автор: Seung Young Lee,Sanghoon Baek. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-12-26.

Monolithic array of semiconductor devices, template wafer, method of manufacturing a template wafer, and method of manufacturing an array of semiconductor devices

Номер патента: WO2024062256A1. Автор: Tongtong ZHU. Владелец: Poro Technologies Ltd. Дата публикации: 2024-03-28.

Method of producing epoxy resin encapsulated semiconductor device

Номер патента: MY112215A. Автор: ITO Hideo,MINAMI Katsunori. Владелец: Sumitomo Bakelite Co. Дата публикации: 2001-04-30.

Method of producing a complementary-type semiconductor device

Номер патента: US5036019A. Автор: Yasushi Higuchi,Hiroyuki Yamane. Владелец: NipponDenso Co Ltd. Дата публикации: 1991-07-30.

Method of manufacturing a dual gate semiconductor device with a poly-metal electrode

Номер патента: US6727132B2. Автор: Naoki Yamamoto. Владелец: Renesas Technology Corp. Дата публикации: 2004-04-27.

Method of manufacturing a dual gate semiconductor device with a poly-metal electrode

Номер патента: US6645799B2. Автор: Naoki Yamamoto. Владелец: HITACHI LTD. Дата публикации: 2003-11-11.

Method of manufacturing a dual gate semiconductor device with a poly-metal electrode

Номер патента: US20030203611A1. Автор: Naoki Yamamoto. Владелец: Renesas Technology Corp. Дата публикации: 2003-10-30.

Method of manufacturing silicon carbide semiconductor device

Номер патента: US20240339323A1. Автор: Hidenori Satou,Atsushi Yoshimoto,Takahito Kojima. Владелец: Fuji Electric Co Ltd. Дата публикации: 2024-10-10.

Method of manufacturing silicon carbide semiconductor device including forming an electric field control region by a laser doping technology

Номер патента: US09825145B2. Автор: Haruo Nakazawa,Yasukazu Seki,Kenichi Iguchi,Koh Yoshikawa. Владелец: Fuji Electric Co Ltd. Дата публикации: 2017-11-21.

Method of manufacturing silicon carbide semiconductor device

Номер патента: US20240234496A1. Автор: Shinsuke Harada,Kensuke Takenaka. Владелец: Fuji Electric Co Ltd. Дата публикации: 2024-07-11.

Semiconductor device with at least one truncated corner and/or side cut-out

Номер патента: US20160211219A1. Автор: Petko Nedelev,Luc BUYDENS,Sam Maddalena. Владелец: MELEXIS TECHNOLOGIES NV. Дата публикации: 2016-07-21.

Manufacturing method for silicon carbide semiconductor device

Номер патента: US20150072485A1. Автор: Yuichi Takeuchi,Naohiro Sugiyama. Владелец: Denso Corp. Дата публикации: 2015-03-12.

Method of manufacturing silicon carbide semiconductor device

Номер патента: US09793121B2. Автор: Yasuyuki Kawada. Владелец: Fuji Electric Co Ltd. Дата публикации: 2017-10-17.

Silicon carbide semiconductor device and method of manufacturing a silicon carbide semiconductor device

Номер патента: US09923062B2. Автор: Mitsuo Okamoto,Kenji Fukuda,Makoto Utsumi,Yoshiyuki Sakai,Shinsuke Harada. Владелец: Fuji Electric Co Ltd. Дата публикации: 2018-03-20.

Methods of forming power semiconductor devices having superjunction structures with pillars having implanted sidewalls

Номер патента: US9972677B2. Автор: LIN Cheng,Vipindas Pala,Edward Robert Van Brunt,Daniel J. Lichtenwalner. Владелец: Cree Inc. Дата публикации: 2018-05-15.

Silicon carbide semiconductor device and method of manufacturing a silicon carbide semiconductor device

Номер патента: US20180358430A1. Автор: Shinsuke Harada,Yusuke Kobayashi,Takahito Kojima,Naoyuki Ohse. Владелец: Fuji Electric Co Ltd. Дата публикации: 2018-12-13.

Silicon carbide semiconductor device and method of manufacturing a silicon carbide semiconductor device

Номер патента: US20160181376A1. Автор: Mitsuo Okamoto,Kenji Fukuda,Makoto Utsumi,Yoshiyuki Sakai,Shinsuke Harada. Владелец: Fuji Electric Co Ltd. Дата публикации: 2016-06-23.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20180090320A1. Автор: Mitsuo Okamoto,Takashi Tsutsumi,Kenji Fukuda,Masaki Miyazato,Youichi Makifuchi,Tsuyoshi ARAOKA. Владелец: Fuji Electric Co Ltd. Дата публикации: 2018-03-29.

Method of manufacturing silicon carbide semiconductor device

Номер патента: US20230154999A1. Автор: Hidemoto Tomita. Владелец: Mirise Technologies Corp. Дата публикации: 2023-05-18.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20210328025A1. Автор: Takahito Kojima,Naoyuki Ohse. Владелец: Fuji Electric Co Ltd. Дата публикации: 2021-10-21.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US11929400B2. Автор: Takahito Kojima,Naoyuki Ohse. Владелец: Fuji Electric Co Ltd. Дата публикации: 2024-03-12.

Methods of forming a finfet semiconductor device with undoped fins

Номер патента: US20150123214A1. Автор: Teck Jung Tang,Andy C. Wei,Akshey Sehgal,Francis M. Tambwe,Seung Y. Kim. Владелец: Globalfoundries Inc. Дата публикации: 2015-05-07.

Method of manufacturing super junction for semiconductor device

Номер патента: US09406745B2. Автор: Mei-Ling Chen,Lung-ching Kao,Kuo-Liang CHAO,Paul Chung-Chen CHANG. Владелец: Pfc Device Holdings Ltd. Дата публикации: 2016-08-02.

Fabricating method of lateral-diffused metal oxide semiconductor device

Номер патента: US09780171B2. Автор: Ming-Shing Chen,Wei-Ting Wu,Ming-Hui Chang,Chao-Chun Ning. Владелец: United Microelectronics Corp. Дата публикации: 2017-10-03.

Hetero-Junction Semiconductor Device And Method of Manufacturing a Hetero-Junction Semiconductor Device

Номер патента: US20160343841A1. Автор: Takashi Okawa. Владелец: Toyota Motor Corp. Дата публикации: 2016-11-24.

Superjunction silicon carbide semiconductor device and method of manufacturing superjunction silicon carbide semiconductor device

Номер патента: US20240347587A1. Автор: Takeshi Tawara,Shinsuke Harada,Kensuke Takenaka. Владелец: Fuji Electric Co Ltd. Дата публикации: 2024-10-17.

Method of manufacturing a bipolar transistor semiconductor device

Номер патента: EP1228533A1. Автор: Doede Terpstra,Catharina H. H. Emons. Владелец: KONINKLIJKE PHILIPS ELECTRONICS NV. Дата публикации: 2002-08-07.

Vertical type semiconductor device, method of manufacturing a vertical type semiconductor device and method of operating a vertical semiconductor device

Номер патента: US20110205816A1. Автор: Jong-wook Lee,Yong-Hoon Son,Jong-Hyuk Kang. Владелец: Individual. Дата публикации: 2011-08-25.

Hetero-junction semiconductor device and method of manufacturing a hetero-junction semiconductor device

Номер патента: US9559197B2. Автор: Takashi Okawa. Владелец: Toyota Motor Corp. Дата публикации: 2017-01-31.

Method of manufacturing a silicon carbide semiconductor device with trench gate structure and vertical pn junction between body region and drift structure

Номер патента: US11195946B2. Автор: Roland Rupp,Romain Esteve,Andreas Peter Meiser. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2021-12-07.

Method of manufacturing channel all-around semiconductor device

Номер патента: US11715765B2. Автор: Chun-Sheng Chen. Владелец: Powerchip Semiconductor Manufacturing Corp. Дата публикации: 2023-08-01.

Silicon carbide semiconductor device and method of manufacturing a silicon carbide semiconductor device

Номер патента: US20190043957A1. Автор: Yasuyuki Hoshi,Yuichi HASHIZUME,Keishirou KUMADA. Владелец: Fuji Electric Co Ltd. Дата публикации: 2019-02-07.

Silicon carbide semiconductor device and method of manufacturing a silicon carbide semiconductor device

Номер патента: US20220254916A1. Автор: Makoto Utsumi,Masaki Miyazato. Владелец: Fuji Electric Co Ltd. Дата публикации: 2022-08-11.

Fabricating method of trench-gate metal oxide semiconductor device

Номер патента: US20140094013A1. Автор: Kuan-Ling LIU,Shih-Yuan UENG. Владелец: United Microelectronics Corp. Дата публикации: 2014-04-03.

Method of manufacturing wide-band gap semiconductor device

Номер патента: US20240170583A1. Автор: Wei-Fan Chen,Kuo-Chi Tsai. Владелец: Leap Semiconductor Corp. Дата публикации: 2024-05-23.

Method of manufacturing an insulated gate semiconductor device

Номер патента: US5960264A. Автор: Hideki Takahashi. Владелец: Mitsubishi Electric Corp. Дата публикации: 1999-09-28.

Method of making a thin film semiconductor device

Номер патента: US5897344A. Автор: Satoshi Teramoto,Yasuhiko Takemura,Hongyong Zhang. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 1999-04-27.

Method of manufacturing stacked-type semiconductor device

Номер патента: US20090191666A1. Автор: Souu Kumagai. Владелец: Disco Corp. Дата публикации: 2009-07-30.

Vertical semiconductor device in narrow slots within trench

Номер патента: US20230178599A1. Автор: Mark I. Gardner,H. Jim Fulford. Владелец: Tokyo Electron Ltd. Дата публикации: 2023-06-08.

Semiconductor device including separation pattern penetrating gate structure and method of fabricating the same

Номер патента: US12132046B2. Автор: Mirco Cantoro,Dong Il Bae,Ho-jun Kim,Beomjin PARK. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-10-29.

Semiconductor device and method of manufacturing the same

Номер патента: US20150008508A1. Автор: Min Sung KO. Владелец: SK hynix Inc. Дата публикации: 2015-01-08.

Semiconductor device and method of fabricating the same

Номер патента: US20240313097A1. Автор: Taehyun Kim,Junggil YANG,Taewon HA. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-09-19.

GaN Single-Crystal Mass and Method of Its Manufacture, and Semiconductor Device and Method of Its Manufacture

Номер патента: US20100314625A1. Автор: Takashi Sakurada,Hideaki Nakahata,Yoshiyuki Yamamoto,Shinsuke Fujiwara,Seiji Nakahata,Tomoki Uemura. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2010-12-16.

Flash memory semiconductor device and method thereof

Номер патента: US09412597B2. Автор: Jen-Yuan Chang,Chia-Ping Lai. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-08-09.

Semiconductor nanocrystal particles and devices including the same

Номер патента: US12060510B2. Автор: Eun Joo Jang,Tae Hyung Kim,Dae Young Chung,Hyun A Kang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-08-13.

Fabrication method of trenched metal-oxide-semiconductor device

Номер патента: US20110230025A1. Автор: Chun Ying Yeh. Владелец: Niko Semiconductor Co Ltd. Дата публикации: 2011-09-22.

Fabrication method of trenched metal-oxide-semiconductor device

Номер патента: US20100151642A1. Автор: Chun Ying Yeh. Владелец: Niko Semiconductor Co Ltd. Дата публикации: 2010-06-17.

Semiconductor nanocrystal particles and devices including the same

Номер патента: US20230272277A1. Автор: Eun Joo Jang,Tae Hyung Kim,Dae Young Chung,Hyun A Kang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-08-31.

Non-volatile memory device and method of manufacturing the same

Номер патента: US09806185B2. Автор: Dong Kee Lee. Владелец: SK hynix Inc. Дата публикации: 2017-10-31.

Method of fabricating high voltage semiconductor device

Номер патента: US6180471B1. Автор: Gary Hong,Peter Chang,Joe Ko. Владелец: United Semiconductor Corp. Дата публикации: 2001-01-30.

Epitaxial substrate for semiconductor device, semiconductor device, and method of manufacturing epitaxial substrate for semiconductor device

Номер патента: US09382641B2. Автор: Mitsuhiro Tanaka,Makoto Miyoshi,Mikiya Ichimura. Владелец: NGK Insulators Ltd. Дата публикации: 2016-07-05.

Semiconductor device and method of making a semiconductor device

Номер патента: US20170170089A1. Автор: Johannes Josephus Theodorus Marinus Donkers,Mark Andrzej Gajda,Jan Sonsky,Godefridus Adrianus Maria Hurkx,Jeroen Antoon CROON. Владелец: Nexperia BV. Дата публикации: 2017-06-15.

Method of fabricating hybrid impact-ionization semiconductor device

Номер патента: US09525040B2. Автор: Ming Zhu,Lee-Wee Teo,Harry Hak-Lay Chuang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-12-20.

THIN FILM, METHOD OF FORMING THIN FILM, SEMICONDUCTOR DEVICE INCLUDING THIN FILM, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

Номер патента: US20140225106A1. Автор: KIM Tae-Sang,BENAYAD Anass,SON Kyoung-seok,Lee Eun-ha. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2014-08-14.

Semiconductor device having active regions of different dimensions and method of manufacturing the same

Номер патента: US20240030290A1. Автор: Wei-Cheng Lin,Jiann-Tyng Tzeng,Ching-Yu Huang,Wei-Cheng TZENG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-01-25.

Semiconductor device and method of fabricating the same

Номер патента: US20240178230A1. Автор: Jeongho Lee,Junsun HWANG,Sewoong PARK. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-05-30.

Semiconductor device on SOI substrate

Номер патента: US5920094A. Автор: Myung-Hee Nam. Владелец: Hyundai Electronics Industries Co Ltd. Дата публикации: 1999-07-06.

Depletion mode semiconductor device with trench gate and manufacturing method thereof

Номер патента: US8680609B2. Автор: Wei-Chieh Lin,Jia-Fu Lin. Владелец: Sinopower Semiconductor Inc. Дата публикации: 2014-03-25.

Depletion mode trench semiconductor device and manufacturing method thereof

Номер патента: US20120139037A1. Автор: Wei-Chieh Lin,Jia-Fu Lin. Владелец: Sinopower Semiconductor Inc. Дата публикации: 2012-06-07.

Semiconductor device and formation thereof

Номер патента: US20150214321A1. Автор: Chia-Ming Tsai,Miin-Jang Chen,Liang-Chen Chi,Chin-Kun Wang,Jhih-Jie Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2015-07-30.

Semiconductor device, methods of forming patterns for semiconductor device, and methods of manufacturing semiconductor devices

Номер патента: KR102290793B1. Автор: 여경환,김도형,김명철,배근희,하승석,박승주,구재형,박기병. Владелец: 삼성전자주식회사. Дата публикации: 2021-08-19.

Semiconductor device and method of fabricating the same

Номер патента: US20220262790A1. Автор: Mirco Cantoro,Dong Il Bae,Ho-jun Kim,Beomjin PARK. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-08-18.

SEMICONDUCTOR DEVICES (as amended)

Номер патента: US20140027824A1. Автор: Byeong-Chan Lee,Jung-Ho Yoo,Keum-seok Park,Woo-Bin Song. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2014-01-30.

Semiconductor device

Номер патента: US20150041892A1. Автор: Francois Hebert,Youngbae Kim,I-Shan Sun,Kwangil Kim,Youngju Kim,Intaek OH,Jinwoo MOON. Владелец: MagnaChip Semiconductor Ltd. Дата публикации: 2015-02-12.

Semiconductor device with reduced junction leakage and an associated method of forming such a semiconductor device

Номер патента: US20120098042A1. Автор: Ming Cai,Bin Yang,Zhen Zhang,Christian Lavoie,Ahmet S. Ozcan. Владелец: International Business Machines Corp. Дата публикации: 2012-04-26.

SEMICONDUCTOR DEVICE STRUCTURE AND METHOD OF FORMING SUCH A SEMICONDUCTOR DEVICE STRUCTURE

Номер патента: US20190371942A1. Автор: Baudot Sylvain Henri,Bossu Germain. Владелец: . Дата публикации: 2019-12-05.

Methods of Forming Gates of Semiconductor Devices

Номер патента: US20120088358A1. Автор: Bo-Un Yoon,Jong-Won Lee,Seung-jae Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2012-04-12.

MATERIAL LAYERS, SEMICONDUCTOR DEVICES INCLUDING THE SAME, AND METHODS OF FABRICATING MATERIAL LAYERS AND SEMICONDUCTOR DEVICES

Номер патента: US20170133219A1. Автор: Koo Bon-Young,Park Ki-yeon,Lee Tae-Jong,TAK Yong-Suk,Kim Jin-Bum,PARK Gi-gwan. Владелец: . Дата публикации: 2017-05-11.

Method of Forming Transistor of Semiconductor Device Using Double Patterning Technology

Номер патента: KR100876806B1. Автор: 임희열. Владелец: 주식회사 하이닉스반도체. Дата публикации: 2009-01-07.

Method of forming patterns of semiconductor device

Номер патента: KR101511159B1. Автор: 박영주,윤광섭,최성운,김명철,오석환,윤동기,이시용. Владелец: 삼성전자주식회사. Дата публикации: 2015-04-10.

Method of Forming Patterns of Semiconductor Device

Номер патента: US20100184287A1. Автор: Jae Doo Eom. Владелец: Hynix Semiconductor Inc. Дата публикации: 2010-07-22.

Semiconductor device having align key and method of fabricating the same

Номер патента: US7129591B2. Автор: Sung-Ho Kim,Myeong-Cheol Kim,Jin-Hee Kim,Doo-Youl Lee,Sung-woo Lee,Sang-Su Kim,In-Wook Cho. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2006-10-31.

Semiconductor device having align key and method of fabricating the same

Номер патента: US20050104229A1. Автор: Sung-Ho Kim,Myeong-Cheol Kim,Jin-Hee Kim,Doo-Youl Lee,Sung-woo Lee,Sang-Su Kim,In-Wook Cho. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2005-05-19.

Capacitor, method of preparing the same, and electronic device including the same

Номер патента: US20240243164A1. Автор: Changsoo LEE,Jooho Lee,Sung Heo,Jinhong Kim,Yong-hee Cho. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-18.

Capacitor, method of preparing the same, and electronic device including the same

Номер патента: EP4411764A2. Автор: Changsoo LEE,Jooho Lee,Sung Heo,Jinhong Kim,Yong-hee Cho. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-08-07.

Method of manufacturing silicon carbide seminconductor device

Номер патента: US20100233832A1. Автор: Yuuichi Takeuchi,Atsuya Akiba. Владелец: Denso Corp. Дата публикации: 2010-09-16.

Method of manufacturing silicon carbide semiconductor device

Номер патента: US7989231B2. Автор: Yuuichi Takeuchi,Atsuya Akiba. Владелец: Denso Corp. Дата публикации: 2011-08-02.

Three-dimensional memory device containing horizontal and vertical word line interconnections and methods of forming the same

Номер патента: WO2021158252A1. Автор: Koichi Ito,Yoshinobu Tanaka,Hirofumi TOKITA. Владелец: SanDisk Technologies LLC. Дата публикации: 2021-08-12.

Quantum dots and devices including the same

Номер патента: US20240254388A1. Автор: Sung Woo Kim,Eun Joo Jang,Tae Hyung Kim,Yuho WON,Jeong Hee Lee,Jin A Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-08-01.

Redistribution Layers And Methods Of Fabricating The Same In Semiconductor Devices

Номер патента: US20210098400A1. Автор: Hsiang-Ku Shen,Dian-Hau Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-04-01.

Group iii nitride semiconductor device, epitaxial substrate, and method of fabricating group iii nitride semiconductor device

Номер патента: TW201034054A. Автор: Masaki Ueno,Takao Nakamura,Takashi Kyono,Katsushi Akita,Yusuke Yoshizumi,Takamichi Sumitomo,Yohei Enya. Владелец: Sumitomo Electric Industries. Дата публикации: 2010-09-16.

METHODS OF FORMING CAPACITORS AND SEMICONDUCTOR DEVICES INCLUDING A RUTILE TITANIUM DIOXIDE MATERIAL

Номер патента: US20150093874A1. Автор: Bhat Vishwanath,CARLSON Chris,Huang Tsai-Yu,Antonov Vassil,Hsieh Chun-I. Владелец: . Дата публикации: 2015-04-02.

Methods of forming capacitors and semiconductor devices including a rutile titanium dioxide material

Номер патента: US20140210049A1. Автор: Chris Carlson,Vishwanath Bhat,Tsai-Yu Huang,Vassil Antonov,Chun-I Hsieh. Владелец: Micron Technology Inc. Дата публикации: 2014-07-31.

Methods of forming capacitors and semiconductor devices including a rutile titanium dioxide material

Номер патента: US8748283B2. Автор: Chris Carlson,Vishwanath Bhat,Tsai-Yu Huang,Vassil Antonov,Chun-I Hsieh. Владелец: Micron Technology Inc. Дата публикации: 2014-06-10.

Polymer substrate and method of forming the same and display device including the polymer substrate and method of manufacturing the display device

Номер патента: TWI516532B. Автор: 金泰雄,李在燮,安成國,陳東彥,南基賢,俆祥準. Владелец: 三星顯示器有限公司. Дата публикации: 2016-01-11.

Semiconductor device and method of manufacturing the same

Номер патента: US20230402568A1. Автор: Min Ji JO,Duk Kyu Bae. Владелец: HEXASOLUTION Co Ltd. Дата публикации: 2023-12-14.

Method of producing hybrid oxide for semiconductor devices

Номер патента: YU301876A. Автор: S H Cohen,J J Fabula. Владелец: RCA Corp. Дата публикации: 1982-06-30.

METHOD OF FORMING METAL LAYER, SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING SAME

Номер патента: US20200232089A1. Автор: LIU Chong,WU Jike,CAO Xiuliang. Владелец: Shanghai Huahong Grace Semiconductor Manufacturing Corporation. Дата публикации: 2020-07-23.

SUBSTRATE ASSEMBLY, METHOD OF FORMING THE SAME, AND ELECTRONIC DEVICE INCLUDING THE SAME

Номер патента: US20170282502A1. Автор: KIM Sang-Woo,SHIN Hyeon-jin,LEE Jin Yeong. Владелец: . Дата публикации: 2017-10-05.

METHOD OF FORMING GATE OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE HAVING SAME

Номер патента: US20170330801A1. Автор: BADAROGLU Mustafa,Ryckaert Julien,Horiguchi Naoto,Dekkers Hendrik F.W.,Ragnarsson Lars-Ake,Schram Tom. Владелец: . Дата публикации: 2017-11-16.

Methods of forming capacitors and integrated circuit devices including tantalum nitride

Номер патента: US20030219942A1. Автор: Byung-hee Kim,Gil-heyun Choi,Kyung-In Choi,Sang-bum Kang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2003-11-27.

Methods of processing semiconductor structures and methods of forming capacitors for semiconductor devices using the same

Номер патента: CN1881531A. Автор: 朴哲佑,尹炳文,金坰显,李光旭,高镛璿,柳昌吉,河成昊,宋寓锡,田溶明,朴昇栗. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2006-12-20.

METHOD OF FORMING PATTERN OF SEMICONDUCTOR DEVICE

Номер патента: US20170125247A1. Автор: Kim Eun-Sung,Yi Shi-Yong,Park Jeong-ju,LEE KYEONG-MI,KWON SEUNG-CHUL. Владелец: . Дата публикации: 2017-05-04.

Method of forming capacitor of semiconductor device for improving capacitance

Номер патента: KR100427540B1. Автор: 박동수,최병대. Владелец: 주식회사 하이닉스반도체. Дата публикации: 2004-07-19.

Method of forming pattern of semiconductor device

Номер патента: KR100574999B1. Автор: 우상균,윤진영,오민정. Владелец: 삼성전자주식회사. Дата публикации: 2006-04-28.

Methods of operating and forming semiconductor devices including dual-gate electrode structures

Номер патента: US09449677B2. Автор: Jiyoung Kim,Hyun-Woo CHUNG,HyeongSun HONG,Yoosang Hwang,Dongsoo Woo,Yongchul Oh,Gyoyoung JIN,Sungkwan Choi. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-09-20.

Methods of forming vertical type semiconductor devices including oxidation target layers

Номер патента: US20150187790A1. Автор: Jae-Young Ahn,Ki-Hyun Hwang,Phil-ouk Nam,Jun-kyu YANG,Byong-hyun JANG. Владелец: Individual. Дата публикации: 2015-07-02.

Method of fabricating memory cell in semiconductor device

Номер патента: US20050189581A1. Автор: Tae Park. Владелец: DongbuAnam Semiconductor Inc. Дата публикации: 2005-09-01.

Driver circuit, method of manufacturing the driver circuit, and display device including the driver circuit

Номер патента: US09997514B2. Автор: Shunpei Yamazaki,Jun Koyama. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2018-06-12.

Driver circuit, method of manufacturing the driver circuit, and display device including the driver circuit

Номер патента: US09515065B2. Автор: Shunpei Yamazaki,Jun Koyama. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2016-12-06.

Display device, method of manufacturing the same, and tiled display device including the same

Номер патента: US12087807B2. Автор: Jun Mo IM. Владелец: Samsung Display Co Ltd. Дата публикации: 2024-09-10.

Driver circuit, method of manufacturing the driver circuit, and display device including the driver circuit

Номер патента: US20140185170A1. Автор: Shunpei Yamazaki,Jun Koyama. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2014-07-03.

Driver circuit, method of manufacturing the driver circuit, and display device including the driver circuit

Номер патента: US20150243647A1. Автор: Shunpei Yamazaki,Jun Koyama. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2015-08-27.

Driver circuit, method of manufacturing the driver circuit, and display device including the driver circuit

Номер патента: US20170148781A1. Автор: Shunpei Yamazaki,Jun Koyama. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2017-05-25.

Metal film and manufacturing method of the metal film, and semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20230411320A1. Автор: Tadashi Yamaguchi. Владелец: Renesas Electronics Corp. Дата публикации: 2023-12-21.

Method of and system for manufacturing semiconductor device

Номер патента: US11803683B2. Автор: Meng-Sheng CHANG,Yao-Jen Yang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-10-31.

Method of and system for manufacturing semiconductor device

Номер патента: US20230376666A1. Автор: Meng-Sheng CHANG,Yao-Jen Yang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-23.

Methods of removing photoresist and fabricating semiconductor devices

Номер патента: US20070093031A1. Автор: Min-Chieh Yang,Wen-Hsien Huang,Jiunn-Hsing Liao. Владелец: United Microelectronics Corp. Дата публикации: 2007-04-26.

Interposer including air gap structure, methods of forming the same, semiconductor device including the interposer, and multi-chip package including the interposer

Номер патента: US20120074530A1. Автор: Kyung-Ho Kim,Chang-Hyun Kim. Владелец: Individual. Дата публикации: 2012-03-29.

Method of determining colorability of a semiconductor device and system for implementing the same

Номер патента: US20170199957A1. Автор: Chin-Chang Hsu,Hsien-Hsin Sean LEE,Jian-Yi Li,Wen-Ju Yang,Li-Sheng Ke,Chung-Yun CHENG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-07-13.

Method of determining colorability of a semiconductor device and system for implementing the same

Номер патента: US20190171789A1. Автор: Chin-Chang Hsu,Hsien-Hsin Sean LEE,Jian-Yi Li,Wen-Ju Yang,Li-Sheng Ke,Chung-Yun CHENG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2019-06-06.

Polyimide resin composition for semiconductor devices, method of forming film in semiconductor devices using the same and semiconductor devices

Номер патента: US20110213075A1. Автор: Junichi Yamashita,Toshiyuki Goshima,Maw Soe Win,Ken Takanashi,Sigemasa Segawa. Владелец: PI R&D Co Ltd. Дата публикации: 2011-09-01.

Methods of forming patterns of semiconductor devices

Номер патента: US20170129972A1. Автор: Tasuku Matsumiya,Katsumi Ohmori,Eun-Sung Kim,Shi-Yong Yi,Kyeong-Mi Lee,Seung-chul Kwon,Jeong-Ju Park,Tsuyosh KUROSAWA. Владелец: Tokyo Ohka Kogyo Co Ltd. Дата публикации: 2017-05-11.

Methods of forming patterns in semiconductor devices using photo resist patterns

Номер патента: US20070196769A1. Автор: Jae-ho Lee,Jin-Mo Kang,Sung-Gun Kang,Jun-Seop Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2007-08-23.

Magnetic structures, methods of forming the same and memory devices including a magnetic structure

Номер патента: US09634238B2. Автор: Sung-Chul Lee,Kwang-Seok Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-04-25.

Polymer, method of preparing the same, and organic optoelectric device including the same

Номер патента: US09847489B1. Автор: Sang Jin Moon,Won Suk Shin,Sang Kyu Lee,Jong Cheol Lee,Changeun Song,Hoang Quoc Viet. Владелец: Korea Research Institute of Chemical Technology KRICT. Дата публикации: 2017-12-19.

Interposer including air gap structure, methods of forming the same, semiconductor device including the interposer, and multi-chip package including the interposer

Номер патента: US8084840B2. Автор: Kyung-Ho Kim,Chang-Hyun Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2011-12-27.

Interposer including air gap structure, methods of forming the same, semiconductor device including the interposer, and multi-chip package including the interposer

Номер патента: US20070013392A1. Автор: Kyung-Ho Kim,Chang-Hyun Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2007-01-18.

Method of determining colorability of a semiconductor device and system for implementing the same

Номер патента: US20200117848A1. Автор: Chin-Chang Hsu,Hsien-Hsin Sean LEE,Jian-Yi Li,Wen-Ju Yang,Li-Sheng Ke,Chung-Yun CHENG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-04-16.

Method of making a low noise semiconductor device comprising a screening measurement

Номер патента: US5683917A. Автор: Cuong Tran,Ralph Francis Trambarulo,Samuel Suresh Martin. Владелец: Lucent Technologies Inc. Дата публикации: 1997-11-04.

Method of wafer-scale integration of semiconductor devices and semiconductor device

Номер патента: US09608035B2. Автор: Franz Schrank,Cathal Cassidy,Joerg Siegert. Владелец: ams AG. Дата публикации: 2017-03-28.

Method of wire bonding of a semiconductor device for resolving oxidation of copper bonding pad

Номер патента: US20040082174A1. Автор: Yu-Chun Huang,Ning Huang,Wen-Tsung Weng,Wen-Lo Shieh,Hui-Pin Chen,Fu-Yu Huang,Chia-Ling Lu,Chih-Yu Tsai,Shu-Wan Lu,Mei-Hua Chen,Yu-Ju Wang,Ya-Hsin Tseng,Zhe-Sung Wu,Tzu-Lin Liu. Владелец: Individual. Дата публикации: 2004-04-29.

A thin film semiconductor device and method of manufacturing a thin film semiconductor device

Номер патента: EP1593163A2. Автор: David Thomas Britton,Margit Härting. Владелец: University of Cape Town. Дата публикации: 2005-11-09.

Image sensor, method of manufacturing the image sensor, and electronic device including the image sensor

Номер патента: US09723188B2. Автор: Won-Jun Lee,Kyoung-In Lee,Cha-Young LEE. Владелец: SK hynix Inc. Дата публикации: 2017-08-01.

Display device, method of fabricating the same, and tiled display device including a plurality of display devices

Номер патента: US20230238494A1. Автор: Nak Cho CHOI,Myung Koo Hur,Sang Woo An,Won ho JANG,Yong Duck Son. Владелец: Samsung Display Co Ltd. Дата публикации: 2023-07-27.

Method of producing a radiation sensor semiconductor device comprising a multiple colour filter

Номер патента: WO2014127988A1. Автор: Rainer Minixhofer. Владелец: ams AG. Дата публикации: 2014-08-28.

Method of producing a radiation sensor semiconductor device comprising a multiple color filter

Номер патента: US09837573B2. Автор: Rainer Minixhofer. Владелец: ams AG. Дата публикации: 2017-12-05.

Method of manufacturing bonding wire for semiconductor device

Номер патента: GB9509683D0. Автор: . Владелец: Tanaka Denshi Kogyo KK. Дата публикации: 1995-07-05.

Organic light emitting display device including a tandem structure and method of manufacturing the organic light emitting display device including the tandem structure

Номер патента: US09893128B2. Автор: Young-Jin Cho,Yong-Jae Kim,Kyoung-Jin Park,Wang-Jo Lee,Deok-Young Choi,Jin-Gon OH. Владелец: Samsung Display Co Ltd. Дата публикации: 2018-02-13.

Method of mounting semiconductor element, and semiconductor device

Номер патента: US09615464B2. Автор: Takashi Kubota,Hidehiko Kira,Masayuki Kitajima,Takatoyo Yamakami. Владелец: Fujitsu Ltd. Дата публикации: 2017-04-04.

Method of manufacturing bonding wire for semiconductor device

Номер патента: SG64376A1. Автор: Ichiro Nagamatsu,Hiroto Iga,Keiko Itabashi,Taeko Tobiyama. Владелец: Tanaka Electronics Ind. Дата публикации: 1999-04-27.

Method of fabricating vertical structure compound semiconductor devices

Номер патента: US20060148115A1. Автор: Myung Yoo. Владелец: Supergate Technology USA Inc. Дата публикации: 2006-07-06.

Method of making metal electrode of semiconductor device

Номер патента: US4293637A. Автор: Kenzo Hatada,Takao Kajiwara. Владелец: Matsushita Electric Industrial Co Ltd. Дата публикации: 1981-10-06.

Methods of forming patterns in semiconductor devices using photo resist patterns

Номер патента: US7553606B2. Автор: Jae-ho Lee,Jin-Mo Kang,Sung-Gun Kang,Jun-Seop Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2009-06-30.

Stack type semiconductor device and method of testing the stack type semiconductor device

Номер патента: US20230307420A1. Автор: Seong Hwi Song. Владелец: SK hynix Inc. Дата публикации: 2023-09-28.

Structure and method of power supply routing in semiconductor device

Номер патента: US20230369310A1. Автор: Shih-Wei Peng,Jiann-Tyng Tzeng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-16.

Three-dimensional mounting semiconductor device and method of manufacturing three-dimensional mounting semiconductor device

Номер патента: US20140027895A1. Автор: Yoshihiro Mizuno,Osamu Tsuboi,Norinao Kouma. Владелец: Fujitsu Ltd. Дата публикации: 2014-01-30.

Curable liquid composition, method of coating, inorganic substrate, and semiconductor device

Номер патента: EP2118175A2. Автор: Maki Itoh,Yukinari Harimoto,Elias Dimitris Katsoulis. Владелец: Dow Corning Toray Co Ltd. Дата публикации: 2009-11-18.

Semiconductor device including crack detection structure and method of detecting progressive crack in semiconductor device

Номер патента: US20240222205A1. Автор: Sungho Park,Younggu KANG,Chulhee JEON,Inho LIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-04.

Display device, method of manufacturing the same, and tiled display device including the same

Номер патента: US20230411576A1. Автор: Seung Min Lee,Seung Min Song,Il You,Sae Hee RYU. Владелец: Samsung Display Co Ltd. Дата публикации: 2023-12-21.

Display device, method of manufacturing the same, and tiled display device including the same

Номер патента: EP4287255A1. Автор: Seung Min Lee,Seung Min Song,Il You,Sae Hee RYU. Владелец: Samsung Display Co Ltd. Дата публикации: 2023-12-06.

Conductive composite structure for electronic device, method of preparing the same, electrode for electronic device including the conductive composite structure, and electronic device including the conductive composite structure

Номер патента: US20190131030A1. Автор: Hyangsook LEE,Minsu Seol,Changseok Lee,Dongjin Yun,Seyun KIM,Seongheon Kim,Changhoon Jung. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-05-02.

Display device, method of manufacturing the same and tiled display device including the same

Номер патента: US20230315376A1. Автор: Dong Sung Lee. Владелец: Samsung Display Co Ltd. Дата публикации: 2023-10-05.

Display device, method of fabricating the same, and tiled display device including a plurality of display devices

Номер патента: EP4220715A1. Автор: Nak Cho CHOI,Myung Koo Hur,Sang Woo An,Won ho JANG,Yong Duck Son. Владелец: Samsung Display Co Ltd. Дата публикации: 2023-08-02.

Display device, method of manufacturing the same and tiled display device including the same

Номер патента: US11989481B2. Автор: Dong Sung Lee. Владелец: Samsung Display Co Ltd. Дата публикации: 2024-05-21.

Display device, method of manufacturing the same, and tiled display device including the same

Номер патента: US11824064B2. Автор: Jun Hong Park,Tae Gyun Kim,Eui Suk JUNG. Владелец: Samsung Display Co Ltd. Дата публикации: 2023-11-21.

Display device, method of manufacturing the same, and tiled display device including the same

Номер патента: US20240088168A1. Автор: Jun Hong Park,Tae Gyun Kim,Eui Suk JUNG. Владелец: Samsung Display Co Ltd. Дата публикации: 2024-03-14.

Method of controlling performance boosting of semiconductor device and semiconductor device performing the method

Номер патента: US20210057420A1. Автор: Sangkyu Kim,Jungwook Kim,Jonglae Park,Hyunju KANG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-02-25.

Display panel, method of fabricating the display panel, and display device including the display panel

Номер патента: US20210217840A1. Автор: Young-Min Park,Atsushi Nemoto,Taeho Lee,JeongJin PARK. Владелец: Samsung Display Co Ltd. Дата публикации: 2021-07-15.

Display device, method of manufacturing the same and tiled display device including the same

Номер патента: US20230307462A1. Автор: Yong Hoon Kwon,Mi Sun KIM,Dong Sung Lee,Se Hun Choi. Владелец: Samsung Display Co Ltd. Дата публикации: 2023-09-28.

System and method of determining pulse properties of semiconductor device

Номер патента: US7495456B2. Автор: Hideki Horii,Yong-ho Ha. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2009-02-24.

Allyloxy derivative, resist underlayer forming composition using the same, and method of manufacturing resist underlayer and semiconductor device using the same

Номер патента: US20210181636A1. Автор: Takashi Sekito,Hiroshi Yanagita,Shigemasa NAKASUGI,Yusuke Hama,Yuriko Matsuura. Владелец: Merck Patent GmBH. Дата публикации: 2021-06-17.

Bending and forming method of fabricating exposed leadframes for semiconductor devices

Номер патента: SG71148A1. Автор: David R Kee,Buford H Carter Jr,Jesse E Clark. Владелец: Texas Instruments Inc. Дата публикации: 2000-03-21.

Method of preventing dielectric breakdown of semiconductor device and semiconductor device preventing dielectric breakdown

Номер патента: US20070253276A1. Автор: Tsuneo Ochi. Владелец: Kawasaki Microelectronics Inc. Дата публикации: 2007-11-01.

Semiconductor element mounting member, method of producing the same, and semiconductor device

Номер патента: US20120292769A1. Автор: Eiji Kamijo,Kouichi Takashima,Yoshifumi Aoi. Владелец: ALMT Corp. Дата публикации: 2012-11-22.

Method of alignment mark protection and semiconductor device formed thereby

Номер патента: US20110304006A1. Автор: Chih-Hao Huang,Chiao-Wen Yeh. Владелец: Macronix International Co Ltd. Дата публикации: 2011-12-15.

Semiconductor device including recess gate structure and method of manufacturing the same

Номер патента: US20240274713A1. Автор: Hyun-Yong Yu,Seung Geun JUNG,Mu Yeong SON. Владелец: SK hynix Inc. Дата публикации: 2024-08-15.

Method of preparing active silicon regions for cmos or other devices

Номер патента: US20090170279A1. Автор: Willy Rachmady,Peter L. D. Chang,Seiyon Kim,Ibrahim Ban. Владелец: Intel Corp. Дата публикации: 2009-07-02.

Semiconductor device and method of manufacturing the same

Номер патента: US09466600B2. Автор: Chang-Hwan Choi. Владелец: Industry University Cooperation Foundation IUCF HYU. Дата публикации: 2016-10-11.

Jet plating method of manufacture of micro-alloy semiconductor devices

Номер патента: US3034970A. Автор: George L Schnable,John G Javes. Владелец: Philco Ford Corp. Дата публикации: 1962-05-15.

Semiconductor device including recess gate structure and method of manufacturing the same

Номер патента: US20220093795A1. Автор: Hyun-Yong Yu,Seung Geun JUNG,Mu Yeong SON. Владелец: SK hynix Inc. Дата публикации: 2022-03-24.

Semiconductor device including recess gate structure and method of manufacturing the same

Номер патента: US11978795B2. Автор: Hyun-Yong Yu,Seung Geun JUNG,Mu Yeong SON. Владелец: SK hynix Inc. Дата публикации: 2024-05-07.

A method of gate structure fabrication in semiconductor device

Номер патента: TW200514149A. Автор: Chang-Rong Wu,Tzu-En Ho. Владелец: Nanya Technology Corp. Дата публикации: 2005-04-16.

METHOD OF FORMING A HETEROJUNCTION SEMICONDUCTOR DEVICE HAVING INTEGRATED CLAMPING DEVICE

Номер патента: US20190123041A1. Автор: Hossain Zia,Padmanabhan Balaji,Venkatraman Prasad,Salih Ali,Liu Chun-Li,McDonald Jason,YOUNG Alexander. Владелец: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC. Дата публикации: 2019-04-25.

METHOD OF FORMING A HETEROJUNCTION SEMICONDUCTOR DEVICE HAVING INTEGRATED CLAMPING DEVICE

Номер патента: US20170317072A1. Автор: Hossain Zia,Padmanabhan Balaji,Venkatraman Prasad,Salih Ali,Liu Chun-Li,McDonald Jason,YOUNG Alexander. Владелец: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC. Дата публикации: 2017-11-02.

Contact structure, method of forming the same, semiconductor device, and method of manufacturing the same

Номер патента: US6657301B2. Автор: Kazuyoshi Maekawa,Yasuhiro Kanda. Владелец: Mitsubishi Electric Corp. Дата публикации: 2003-12-02.

Method of forming a semiconductor package with conductive interconnect frame and structure

Номер патента: US09917039B2. Автор: Marc Alan Mangrum,Thinh Van Pham. Владелец: Amkor Technology Inc. Дата публикации: 2018-03-13.

Semiconductor device assembly and method therefor

Номер патента: US12027485B2. Автор: Jinbang Tang. Владелец: NXP USA Inc. Дата публикации: 2024-07-02.

Semiconductor device assembly and method therefor

Номер патента: US20220149000A1. Автор: Jinbang Tang. Владелец: NXP USA Inc. Дата публикации: 2022-05-12.

Semiconductor device and method of fabricating the same

Номер патента: US20210143182A1. Автор: Dong Min Kang,Hyung Sup Yoon,Sung-Bum BAE,Kyu Jun CHO,Sung-Jae Chang. Владелец: Electronics and Telecommunications Research Institute ETRI. Дата публикации: 2021-05-13.

Method of forming a semiconductor package with conductive interconnect frame and structure

Номер патента: US20170309554A1. Автор: Marc Alan Mangrum,Thinh Van Pham. Владелец: Amkor Technology Inc. Дата публикации: 2017-10-26.

Device for holding multiple semiconductor devices during thermocompression bonding and method of bonding

Номер патента: US09484241B2. Автор: Chun Ho Fan,Man Chung CHAN. Владелец: ASM TECHNOLOGY SINGAPORE PTE LTD. Дата публикации: 2016-11-01.

Laser bonding apparatus, method of bonding semiconductor devices, and method of manufacturing semiconductor package

Номер патента: US10886248B2. Автор: Satoshi Inada,Jun-Su Lim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-01-05.

Wire ball bonding in semiconductor devices

Номер патента: US20190221537A1. Автор: HAN Zhong,CHEN XIONG,Xi Lin Li,Zi Qi Wang,Yong Qiang Tang. Владелец: Texas Instruments Inc. Дата публикации: 2019-07-18.

Method of manufacturing multi-die semiconductor devices

Номер патента: EP4016614A1. Автор: Paolo Crema. Владелец: STMICROELECTRONICS SRL. Дата публикации: 2022-06-22.

Semiconductor device and method of forming components for semiconductor device

Номер патента: IL313621A. Автор: Stanley Lai,Barry Lin,Chian Lim Chee,Hwee Tuang Kwang,Yew-Khuan Teoh. Владелец: Teoh Yew Khuan. Дата публикации: 2024-08-01.

Wire ball bonding in semiconductor devices

Номер патента: WO2019136743A1. Автор: HAN Zhong,CHEN XIONG,Xi Lin Li,Zi Qi Wang,Yong Qiang Tang. Владелец: Texas Instruments Japan Limited. Дата публикации: 2019-07-18.

Semiconductor device packaging warpage control

Номер патента: US11728285B2. Автор: Vivek Gupta,Michael B. Vincent,Scott M. Hayes,Zhiwei Gong,Richard Te GAN. Владелец: NXP USA Inc. Дата публикации: 2023-08-15.

Photovoltaic cell device and manufacturing method of template thereof

Номер патента: US20210313180A1. Автор: Sheng-Hui Chen,Bo-Huei Liao,Shao-Ze Tseng. Владелец: National Central University. Дата публикации: 2021-10-07.

Method of manufacturing NOR-type mask ROM device and semiconductor device including the same

Номер патента: US7364973B2. Автор: Hyun-Khe Yoo,Weon-Ho Park,Byoung-Ho Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2008-04-29.

Method of manufacturing NOR-type mask ROM device and semiconductor device including the same

Номер патента: US20070275509A1. Автор: Hyun-Khe Yoo,Weon-Ho Park,Byoung-Ho Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2007-11-29.

Method of manufacturing GaN-based semiconductor device

Номер патента: US8633087B2. Автор: Hideki Matsubara,Kuniaki Ishihara. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2014-01-21.

Methods of forming packaged semiconductor devices and leadframes for semiconductor device packages

Номер патента: US12009286B2. Автор: Alexander Komposch,Eng Wah Woo,Soon Lee Liew. Владелец: MACOM Technology Solutions Holdings Inc. Дата публикации: 2024-06-11.

Method of selectively transferring semiconductor device

Номер патента: US11901478B2. Автор: Shih-I Chen,Hao-Min Ku,Fu-Chun Tsai,Hsin-Chih CHIU,You-Hsien Chang. Владелец: Epistar Corp. Дата публикации: 2024-02-13.

Redistribution layers and methods of fabricating the same in semiconductor devices

Номер патента: US11967573B2. Автор: Hsiang-Ku Shen,Dian-Hau Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-04-23.

Redistribution layers and methods of fabricating the same in semiconductor devices

Номер патента: US20240274558A1. Автор: Hsiang-Ku Shen,Dian-Hau Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-15.

Jet plating method of manufacture of micro-alloy semiconductor devices

Номер патента: US3102084A. Автор: Thomas J Manns. Владелец: Philco Ford Corp. Дата публикации: 1963-08-27.

METHODS OF FORMING AND OPERATING SEMICONDUCTOR DEVICES INCLUDING DUMMY CHIPS

Номер патента: US20180323160A1. Автор: Shih Shing-Yih,Shih Neng-Tai. Владелец: . Дата публикации: 2018-11-08.

Semiconductor device structure with gate dielectric layer and method for forming the same

Номер патента: US20240120334A1. Автор: Jeng-Ya Yeh,Hsin-Che Chiang,Wei-Chih Kao. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-04-11.

Lead frame, method of manufacturing the same, and semiconductor device manufactured with the same

Номер патента: TW200405488A. Автор: Tetsuichiro Kasahara,Akinobu Abe. Владелец: Shinko Electric Ind Co. Дата публикации: 2004-04-01.

Method of fixing connecting wire to semiconductor device

Номер патента: JPS55154742A. Автор: Hatsuke Hansuyurugen,Pentsuru Rainhoruto,Raushiyaa Geruharuto,Shiyuraa Rotaaru,Uirupuzaa Osukaaru. Владелец: SIEMENS AG. Дата публикации: 1980-12-02.

Manufacturing method of light emitting device

Номер патента: US20170087751A1. Автор: Motoyuki Tanaka,Hiroyuki Tajima,Yosuke Tsuchiya. Владелец: Toyoda Gosei Co Ltd. Дата публикации: 2017-03-30.

Manufacturing method of light emitting device

Номер патента: US10279552B2. Автор: Motoyuki Tanaka,Hiroyuki Tajima,Yosuke Tsuchiya. Владелец: Toyoda Gosei Co Ltd. Дата публикации: 2019-05-07.

METHODS OF FORMING GATES OF SEMICONDUCTOR DEVICES

Номер патента: US20140235047A1. Автор: LEE Seung-jae,Lee Jong-Won,Yoon Bo-Un. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2014-08-21.

Method of forming fuse of semiconductor device

Номер патента: KR940022800A. Автор: 신화주. Владелец: 금성일렉트론 주식회사. Дата публикации: 1994-10-21.

Method of forming contact of semiconductor device

Номер патента: KR100220296B1. Автор: 박해성,김명선,안동준,이헌철,손곤. Владелец: 현대전자산업주식회사. Дата публикации: 1999-09-15.

Semiconductor device

Номер патента: US12074195B1. Автор: Petar Atanackovic. Владелец: Silanna UV Technologies Pte Ltd. Дата публикации: 2024-08-27.

Semiconductor device and method of formation

Номер патента: US09525072B2. Автор: Si-Chen Lee,Meng-Yu Lin,Shih-Yen Lin. Владелец: National Taiwan University NTU. Дата публикации: 2016-12-20.

Semiconductor device structure and methods of forming the same

Номер патента: US20240266424A1. Автор: Hsu Ming Hsiao,Hsiu-Hao Tsao. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-08.

Semiconductor device and method of producing thereof

Номер патента: US20240113216A1. Автор: Carsten Schaeffer,Yuliya Lisunova,Andreas Frank Behrendt,Simon Paul Sindermann,Adriana Mercedes Sanchez Lotero,Silke Liebscher. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2024-04-04.

Nonvolatile semiconductor memory and method of manufacturing the same

Номер патента: US20110217831A1. Автор: Takeshi Kikuchi. Владелец: Renesas Electronics Corp. Дата публикации: 2011-09-08.

Transistors and methods of forming transistors using vertical nanowires

Номер патента: US20180233583A1. Автор: Alexander Reznicek,Dominic J. Schepis. Владелец: Globalfoundries Inc. Дата публикации: 2018-08-16.

Semiconductor device having ferroelectric or negative capacitor and method of manufacturing the same, and electronic device

Номер патента: US20240306396A1. Автор: Huilong Zhu,Weixing Huang. Владелец: Institute Of Microelectronics Chinese Academy Sciences. Дата публикации: 2024-09-12.

Semiconductor device and method of fabricating the same

Номер патента: US12132106B2. Автор: Shin-Hung Li. Владелец: United Microelectronics Corp. Дата публикации: 2024-10-29.

Semiconductor device and formation thereof

Номер патента: US09698240B2. Автор: Mark Van Dal,Blandine Duriez. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-07-04.

Under-spacer doping in fin-based semiconductor devices

Номер патента: US09496356B2. Автор: Kangguo Cheng,Ali Khakifirooz,Charles W. Koburger, III,Veeraraghavan S. Basker. Владелец: International Business Machines Corp. Дата публикации: 2016-11-15.

Semiconductor device and method of fabricating the same

Номер патента: EP4386844A2. Автор: Jeongho Lee,Junsun HWANG,Sewoong PARK. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-06-19.

Semiconductor device and method for manufacturing same

Номер патента: US20140167126A1. Автор: LI Wang,Zhewei Wang,Xuelei Chen,Liangwei Mou,Zhaoxing Huang. Владелец: CSMC Technologies Fab2 Co Ltd. Дата публикации: 2014-06-19.

Under-spacer doping in fin-based semiconductor devices

Номер патента: US09455323B2. Автор: Kangguo Cheng,Ali Khakifirooz,Charles W. Koburger, III,Veeraraghavan S. Basker. Владелец: International Business Machines Corp. Дата публикации: 2016-09-27.

Semiconductor device having 3d stacked structure and method of manufacturing the same

Номер патента: EP4057349A1. Автор: Jaechul Park,Sanghun Jeon,Youngkwan Cha. Владелец: Korea Advanced Institute of Science and Technology KAIST. Дата публикации: 2022-09-14.

Semiconductor device and method of fabricating the same

Номер патента: EP4432340A1. Автор: Taehyun Kim,Junggil YANG,Taewon HA. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-09-18.

Memory device and method of forming the same

Номер патента: US20240215254A1. Автор: Yu-Ming Lin,Sai-Hooi Yeong,Han-Jong Chia,Chao-I Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-06-27.

Method of forming memory device

Номер патента: US20240357826A1. Автор: Yu-Ming Lin,Sai-Hooi Yeong,Han-Jong Chia,Chao-I Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-24.

Semiconductor device and method of formation

Номер патента: US20160005830A1. Автор: Ming-Han Liao. Владелец: National Taiwan University NTU. Дата публикации: 2016-01-07.

Semiconductor device

Номер патента: US10586861B2. Автор: Tim BOETTCHER,Soenke Habenicht,Steffen Holland,Stefan Berglund. Владелец: Nexperia BV. Дата публикации: 2020-03-10.

Semiconductor device and method of formation

Номер патента: US09917169B2. Автор: Ming-Han Liao. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-03-13.

Semiconductor device and method of manufacturing the same

Номер патента: US20230395660A1. Автор: Kyungho Kim,Kihwan Kim,Choeun LEE,Kanghun Moon,Yonguk JEON. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-12-07.

High hole mobility transistor (HHMT) and method of manufacturing the same

Номер патента: US12136669B2. Автор: Zilan Li. Владелец: Guangdong Zhineng Technologies Co Ltd. Дата публикации: 2024-11-05.

Semiconductor device and formation thereof

Номер патента: US09847233B2. Автор: Yen-Ting Chen,Chee-Wee Liu,I-Hsieh Wong. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-12-19.

Semiconductor device with metal alloy over fin, conductive layer over channel region of fin, and semiconductive layer over conductive layer and formation thereof

Номер патента: US09590105B2. Автор: Cheng-Ting Chung,Chao-Hsin Chien,Che-Wei Chen. Владелец: National Chiao Tung University NCTU. Дата публикации: 2017-03-07.

Vertical non-planar semiconductor device for system-on-chip (SoC) applications

Номер патента: US09520494B2. Автор: Walid M. Hafez,Chia-Hong Jan,Jeng-Ya D. YEH,Joodong Park,Curtis Tsai. Владелец: Intel Corp. Дата публикации: 2016-12-13.

Semiconductor device

Номер патента: US09837540B2. Автор: Chien-Hao Chen,En-Chiuan Liou,Tang-Chun Weng. Владелец: United Microelectronics Corp. Дата публикации: 2017-12-05.

Layer structures including configuration increasing operation characteristics, methods of manufacturing the same, electronic devices including layer structures, and electronic apparatuses including electronic devices

Номер патента: US20230036321A1. Автор: Minsu Seol,JunYoung KWON,Minseok YOO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-02-02.

Method of forming an NPN device

Номер патента: US20020109208A1. Автор: Sang Park,Alexander Kalnitsky,Robert Scheer. Владелец: Maxim Integrated Products Inc. Дата публикации: 2002-08-15.

Semiconductor device and method of manufacturing the same

Номер патента: US12021080B2. Автор: Dongsoo Lee,Wonkeun Chung,Hoonjoo NA,Suyoung BAE,Jaeyeol Song,Jonghan LEE,HyungSuk Jung,Sangjin Hyun. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-06-25.

Method of making silicon carbide semiconductor device

Номер патента: US7947555B2. Автор: Eiichi Okuno,Atsuya Akiba. Владелец: Denso Corp. Дата публикации: 2011-05-24.

Thin film transistor assembly, array substrate method of manufacturing the same, and display device

Номер патента: US09543443B2. Автор: Jing NIU,Zhijun LV,Fangzhen Zhang,Shuang Sun. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2017-01-10.

Integrated Circuit Device Having Defined Gate Spacing And Method Of Designing And Fabricating Thereof

Номер патента: US20140332893A1. Автор: Ming Zhu,Harry-Hak-Lay Chuang,Bao-Ru Young,Po-Nien Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2014-11-13.

Semiconductor device and method of formation

Номер патента: US20170098693A1. Автор: Si-Chen Lee,Meng-Yu Lin,Shih-Yen Lin. Владелец: National Taiwan University NTU. Дата публикации: 2017-04-06.

Semiconductor device and method of formation

Номер патента: US20160043235A1. Автор: Si-Chen Lee,Meng-Yu Lin,Shih-Yen Lin. Владелец: National Taiwan University NTU. Дата публикации: 2016-02-11.

Semiconductor device and method of formation

Номер патента: US20190319101A1. Автор: Si-Chen Lee,Meng-Yu Lin,Shih-Yen Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2019-10-17.

Semiconductor device and method of formation

Номер патента: US9853105B2. Автор: Si-Chen Lee,Meng-Yu Lin,Shih-Yen Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-12-26.

Semiconductor device and method of formation

Номер патента: US10269902B2. Автор: Si-Chen Lee,Meng-Yu Lin,Shih-Yen Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2019-04-23.

Semiconductor device and method of formation

Номер патента: US20180122909A1. Автор: Si-Chen Lee,Meng-Yu Lin,Shih-Yen Lin. Владелец: National Taiwan University NTU. Дата публикации: 2018-05-03.

Method of forming gallium arsenide semiconductor devices

Номер патента: US3261730A. Автор: Erik M Pell. Владелец: General Electric Co. Дата публикации: 1966-07-19.

Method of manufacturing multi-channel transistor device and multi-channel transistor device manufactured using the method

Номер патента: US20100093146A1. Автор: Min-Sang Kim,Se-Myeong Jang,Woun-Suck Yang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2010-04-15.

Method of forming power semiconductor device

Номер патента: US20230187537A1. Автор: Sang-Yong Lee,Sang-Su Woo. Владелец: PanJit International Inc. Дата публикации: 2023-06-15.

Semiconductor device having fin gate, resistive memory device including the same, and method of manufacturing the same

Номер патента: US20160079398A1. Автор: Nam Kyun PARK. Владелец: SK hynix Inc. Дата публикации: 2016-03-17.

Gate isolation features and methods of fabricating the same in semiconductor devices

Номер патента: US20240379673A1. Автор: Chia-Ta Yu,Yuan-Ching Peng,Jiun-Ming Kuo. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-11-14.

Under-spacer doping in fin-based semiconductor devices

Номер патента: US20160064527A1. Автор: Kangguo Cheng,Ali Khakifirooz,Charles W. Koburger, III,Veeraraghavan S. Basker. Владелец: International Business Machines Corp. Дата публикации: 2016-03-03.

Under-spacer doping in fin-based semiconductor devices

Номер патента: US20160064501A1. Автор: Kangguo Cheng,Ali Khakifirooz,Charles W. Koburger, III,Veeraraghavan S. Basker. Владелец: International Business Machines Corp. Дата публикации: 2016-03-03.

Carrier injection control fast recovery diode structures and methods of fabrication

Номер патента: US20200105866A1. Автор: Hamza Yilmaz. Владелец: IPOWER SEMICONDUCTOR. Дата публикации: 2020-04-02.

Semiconductor device including high electron mobility transistor or high hole mobility transistor and method of fabricating the same

Номер патента: US11830940B2. Автор: Zilan Li. Владелец: Guangdong Zhineng Technologies Co Ltd. Дата публикации: 2023-11-28.

Semiconductor device having 3d stacked structure and method of manufacturing the same

Номер патента: US20220285401A1. Автор: Jaechul Park,Sanghun Jeon,Youngkwan Cha. Владелец: Korea Advanced Institute of Science and Technology KAIST. Дата публикации: 2022-09-08.

Semiconductor device and method for manufacturing same

Номер патента: US9548297B2. Автор: LI Wang,Zhewei Wang,Xuelei Chen,Liangwei Mou,Zhaoxing Huang. Владелец: CSMC Technologies Fab2 Co Ltd. Дата публикации: 2017-01-17.

Semiconductor device

Номер патента: US20180145158A1. Автор: Tim BOETTCHER,Soenke Habenicht,Steffen Holland,Stefan Berglund. Владелец: Nexperia BV. Дата публикации: 2018-05-24.

Superjunction semiconductor device and method of manufacturing same

Номер патента: US12009419B2. Автор: Yong Sin HAN,Myeong Bum PYUN. Владелец: DB HiTek Co Ltd. Дата публикации: 2024-06-11.

Transistors and methods of forming transistors using vertical nanowires

Номер патента: US20200185510A1. Автор: Alexander Reznicek,Dominic J. Schepis. Владелец: Globalfoundries Inc. Дата публикации: 2020-06-11.

Semiconductor device and method of manufacturing the same

Номер патента: US20190123151A1. Автор: YUAN Li. Владелец: Gpower Semiconductor Inc. Дата публикации: 2019-04-25.

High voltage silicon carbide mos-bipolar devices having bi-directional blocking capabilities and methods of fabricating the same

Номер патента: EP1882273A2. Автор: John W. Palmour,Mrinal K. Das,Sei-Hyung Ryu,Anant K. Agarwal,Jason R. Jenny,Hudson McDonald Hobgood. Владелец: Cree Inc. Дата публикации: 2008-01-30.

High voltage silicon carbide mos-bipolar devices having bi-directional blocking capabilities and methods of fabricating the same

Номер патента: WO2006124174A2. Автор: John W. Palmour,Mrinal K. Das,Sei-Hyung Ryu,Anant K. Agarwal,Jason R. Jenny,Hudson McDonald Hobgood. Владелец: CREE, INC.. Дата публикации: 2006-11-23.

High hole mobility transistor (hhmt) and method of manufacturing the same

Номер патента: US20220199818A1. Автор: Zilan Li. Владелец: Guangdong Zhineng Technologies Co Ltd. Дата публикации: 2022-06-23.

Semiconductor Device and Method of Formation

Номер патента: US20200058751A1. Автор: Ming-Han Liao. Владелец: National Taiwan University NTU. Дата публикации: 2020-02-20.

Semiconductor device and method of formation

Номер патента: US20180190783A1. Автор: Ming-Han Liao. Владелец: National Taiwan University NTU. Дата публикации: 2018-07-05.

Method of manufacturing trench type semiconductor device

Номер патента: US20220157958A1. Автор: Jau-Yan Lin. Владелец: Advanced Power Electronics Corp USA. Дата публикации: 2022-05-19.

Semiconductor device and method of formation

Номер патента: US10461165B2. Автор: Ming-Han Liao. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2019-10-29.

Oxide semiconductor device, method of forming an oxide semiconductor device and organic light emitting display device having an oxide semiconductor device

Номер патента: KR102292058B1. Автор: 김태영,양신혁,박혜향. Владелец: 삼성디스플레이 주식회사. Дата публикации: 2021-08-23.

Vertical non-planar semiconductor device for system-on-chip (soc) applications

Номер патента: WO2015047281A1. Автор: Walid M. Hafez,Chia-Hong Jan,Jeng-Ya D. YEH,Joodong Park,Curtis Tsai. Владелец: Intel Corporation. Дата публикации: 2015-04-02.

METHODS OF FORMING BULK FINFET SEMICONDUCTOR DEVICES BY PERFORMING A LINER RECESSING PROCESS TO DEFINE FIN HEIGHTS AND FINFET DEVICES WITH SUCH A RECESSED LINER

Номер патента: US20140159171A1. Автор: Cheng Kangguo,Khakifirooz Ali,Xie Ruilong,Cai Xiuyu. Владелец: . Дата публикации: 2014-06-12.

Method of forming a power semiconductor device and power semiconductor device

Номер патента: US8592894B2. Автор: Jean Michel Reynes,Evgueniy Stafanov,Yann Weber. Владелец: FREESCALE SEMICONDUCTOR INC. Дата публикации: 2013-11-26.

Semiconductor memory device including select transistor with low dielectric core insulating layer and method of manufacturing the same

Номер патента: US11812613B2. Автор: Gil Bok CHOI,Dae Hwan YUN. Владелец: SK hynix Inc. Дата публикации: 2023-11-07.

Method of forming electrode of semiconductor device

Номер патента: KR100503514B1. Автор: 이상우,최길현,최경인,강상범,이종명,이유경,박성건. Владелец: 삼성전자주식회사. Дата публикации: 2005-07-22.

Memory device including vertical stack structure and method of manufacturing the same

Номер патента: US11682717B2. Автор: Youngjin Cho,Jinhong Kim,Doyoon KIM,Seyun KIM,Soichiro Mizusaki,Yumin KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-06-20.

Memory device including vertical stack structure and method of manufacturing the same

Номер патента: US20220310827A1. Автор: Youngjin Cho,Jinhong Kim,Doyoon KIM,Seyun KIM,Soichiro Mizusaki,Yumin KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-09-29.

Image device and methods of forming the same

Номер патента: US20130327921A1. Автор: Dun-Nian Yaung,Jen-Cheng Liu,Chih-Chien Wang,Cheng-ta Wu,Shih Pei Chou,U-Ting CHEN,Yu-Hao SHIH,Wei-Tung Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2013-12-12.

Method of fabricating three-dimensional semiconductor memory device

Номер патента: US11805710B2. Автор: Heejung Kim,Taehong Min,Chorong Park,Joohee SEO,Eunsuk HWANG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-10-31.

METHODS OF FORMING PATTERNS OF SEMICONDUCTOR DEVICES

Номер патента: US20170053802A1. Автор: Park Seok-Han. Владелец: . Дата публикации: 2017-02-23.

Apparatus for processing plasma and method of processing plasma and manufacturing semiconductor device using the same

Номер патента: US20240128055A1. Автор: Jihwan Kim,Juho Lee,SeungBo SHIM,Hyunjae Lee,Sangki NAM,Hyunbae Kim,Daeun Son,Hyunhak Jeong. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-04-18.

Semiconductor device and method of manufacturing the same

Номер патента: US09502425B2. Автор: Shigenobu Maeda,Hyun-Min Choi,Jihoon Yoon,Sungman Lim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-11-22.

Semiconductor device and method of manufacturing the same

Номер патента: US09887202B2. Автор: Shigenobu Maeda,Hyun-Min Choi,Jihoon Yoon,Sungman Lim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-02-06.

Gate structure and method of forming the same, semiconductor device including the gate structure and method of manufacturing the same

Номер патента: US20240349487A1. Автор: Byounghoon Lee,Sungnam LYU,Hyojung NOH,Eulji JEONG,Minwoo YANG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-10-17.

Semiconductor device for electrostatic discharge protection and method of forming the same

Номер патента: US09691752B1. Автор: Kuan-Cheng Su,Tien-Hao Tang,Mei-Ling Chao. Владелец: United Microelectronics Corp. Дата публикации: 2017-06-27.

Semiconductor device

Номер патента: US20160163653A1. Автор: Coenraad Cornelis Tak,Jeroen Antoon CROON. Владелец: NXP BV. Дата публикации: 2016-06-09.

Semiconductor device and method of operation

Номер патента: US20190123139A1. Автор: Adam Richard Brown,Steven Waterhouse,Saurabh Pandey,Phil Rutter,Jim Brett PARKIN. Владелец: Nexperia BV. Дата публикации: 2019-04-25.

Semiconductor device and method of operation

Номер патента: US20200066840A9. Автор: Adam Richard Brown,Steven Waterhouse,Saurabh Pandey,Phil Rutter,Jim Brett PARKIN. Владелец: Nexperia BV. Дата публикации: 2020-02-27.

Three dimensional memory device and method of making thereof by forming channel and memory film after word line replacement

Номер патента: US12101936B2. Автор: Akio Nishida,Yusuke Mukae,Masanori Tsutsumi,Ramy Nashed Bassely SAID,Tatsuya Hinoue,Ryousuke ITOU. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-09-24.

Memory device and method of forming the same

Номер патента: US20240381653A1. Автор: Yu-Ming Lin,Sai-Hooi Yeong,Chao-I Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-11-14.

Semiconductor device having superlattice semiconductor layer and method of manufacturing the same

Номер патента: EP1505698B1. Автор: Won-seok Lee,Joon-seop Kwak,Kyoung-ho Ha,Ho-sun Paek,Sung-nam Lee,Tan B-502 Stbobo 2-cha Sakong. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2009-09-09.

Semiconductor device having reduced noise and method of manufacturing the same

Номер патента: US20240371954A1. Автор: Clement Hsingjen Wann,I-Sheng Chen,Wan-Lin Tsai,Yi-Jing Li,Kai-Qiang Wen,Shih-Chun Fu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-11-07.

Manufacture of trench-gate semiconductor devices

Номер патента: WO2004055884A1. Автор: Erwin A. Hijzen,Michael A. A. In 't Zandt. Владелец: KONINKLIJKE PHILIPS ELECTRONICS N.V.. Дата публикации: 2004-07-01.

Holding circuit, driving method of the holding circuit, and semiconductor device including the holding circuit

Номер патента: US09601215B2. Автор: Takuro Ohmaru. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2017-03-21.

Substrate assembly, method of forming the same, and electronic device including the same

Номер патента: US09738057B2. Автор: Hyeon-jin SHIN,Sang-Woo Kim,Jin Yeong Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-08-22.

Temperature sensor, method of manufacturing the temperature sensor, semiconductor device, method of manufacturing the semiconductor device, and method of controlling the semiconductor device

Номер патента: US20120176835A1. Автор: Yoshitsugu Tanaka. Владелец: Tokyo Electron Ltd. Дата публикации: 2012-07-12.

Temperature sensor, method of manufacturing the temperature sensor, semiconductor device, method of manufacturing the semiconductor device, and method of controlling the semiconductor device

Номер патента: TW201243300A. Автор: Yoshitsugu Tanaka. Владелец: Tokyo Electron Ltd. Дата публикации: 2012-11-01.

Semiconductor device and method of manufacturing the same

Номер патента: SG10201802450PA. Автор: LEE Dongsoo,Hyun Sangjin,Na Hoonjoo,Chung Wonkeun,Bae Suyoung,Song Jaeyeol,Lee Jonghan,Jung HyungSuk. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-01-30.

Method to produce a 3d multilayer semiconductor device and structure

Номер патента: US20240274534A1. Автор: Zvi Or-Bach,Jin-Woo Han. Владелец: Monolithic 3D Inc. Дата публикации: 2024-08-15.

Method of fabricating nonvolatile organic bistable memory device including polymer thin film with nanoparticles serving as charge trapping region

Номер патента: WO2009022774A1. Автор: Jae-Hoon Jung,Tae-Whan Kim,Dong-Ick Son,Jae-Hyeon Leem. Владелец: INDUSTRY-UNIVERSITY COOPERATION FOUNDATION, HANYANG UNIVERSITY. Дата публикации: 2009-02-19.

Transistors, methods of manufacturing a transistor and electronic devices including a transistor

Номер патента: US09583638B2. Автор: Chang-Jung Kim,Sang-Wook Kim,Jae-Chul Park,Sun-Il Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-02-28.

Method of manufacture of vertical split gate flash memory device

Номер патента: US6087222A. Автор: Shui-Hung Chen,Di-Son Kuo,Chrong Jung Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2000-07-11.

Structure and method of non-rectangular cell in semiconductor device

Номер патента: US12039242B2. Автор: Chung-Hsing Wang,Jerry Chang Jui Kao,Tzu-Ying LIN,Hui-Zhong ZHUANG,Jung-Chan YANG,Pochun Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-16.

Weighting device, neural network, and operating method of the weighting device

Номер патента: US09767407B2. Автор: Seongho CHO,Hojung Kim,Inkyeong Yoo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-09-19.

Semiconductor device

Номер патента: US9461002B2. Автор: Coenraad Cornelis Tak,Jeroen Antoon CROON. Владелец: NXP BV. Дата публикации: 2016-10-04.

Doped graphene, method of manufacturing the doped graphene, and a device including the doped graphene

Номер патента: US09887020B2. Автор: Jae-Young Choi,Hyeon-jin SHIN,Seon-mi Yoon,Won-mook CHOI. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-02-06.

Methods of forming vertical type semiconductor devices including oxidation target layers

Номер патента: US9082659B1. Автор: Jae-Young Ahn,Ki-Hyun Hwang,Phil-ouk Nam,Jun-kyu YANG,Byong-hyun JANG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2015-07-14.

Layer structures including dielectric layer, methods of manufacturing dielectric layer, electronic device including dielectric layer, and electronic apparatus including electronic device

Номер патента: US20230163188A1. Автор: Jooho Lee,Yongsung Kim,Woochul LEE,Yong-hee Cho,Jiwoon Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-05-25.

Holding circuit, driving method of the holding circuit, and semiconductor device including the holding circuit

Номер патента: WO2015155633A1. Автор: Takuro Ohmaru. Владелец: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.. Дата публикации: 2015-10-15.

Substrate assembly, method of forming the same, and electronic device including the same

Номер патента: US20140287244A1. Автор: Hyeon-jin SHIN,Sang-Woo Kim,Jin Yeong Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2014-09-25.

Integrated fan-out package, semiconductor device, and method of fabricating the same

Номер патента: US09812426B1. Автор: Hsien-Wei Chen,Wei-Cheng Wu,Li-Han Hsu,Cheng-Hsien Hsieh,Tzu-Shiun Sheu,Yan-Fu Lin,Chin-te Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-11-07.

Testing of semiconductor devices and devices, and designs thereof

Номер патента: US09945899B2. Автор: Stefano Aresu,Michael Roehner. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2018-04-17.

Semiconductor device and method of fabricating the same

Номер патента: US12142587B2. Автор: Jinho PARK,Jeong Hoon Ahn,Chin Kim,Yongseung Bang,Jiyeon Baek. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-11-12.

Solid state lighting devices having side reflectivity and associated methods of manufacture

Номер патента: US20130240939A1. Автор: Tongbi Jiang,Jaspreet S. Gandhi. Владелец: Micron Technology Inc. Дата публикации: 2013-09-19.

Solid state lighting devices having side reflectivity and associated methods of manufacture

Номер патента: WO2012166809A3. Автор: Tongbi Jiang,Jaspreet Gandhi. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2013-01-24.

Solid state lighting devices having side reflectivity and associated methods of manufacture

Номер патента: WO2012166809A2. Автор: Tongbi Jiang,Jaspreet Gandhi. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2012-12-06.

Solid state lighting devices having side reflectivity and associated methods of manufacture

Номер патента: US20120305957A1. Автор: Tongbi Jiang,Jaspreet Gandhi. Владелец: Micron Technology Inc. Дата публикации: 2012-12-06.

Semiconductor device and method of manufacturing the same

Номер патента: US20030030095A1. Автор: Yoshinori Tanaka,Yoshitaka Fujiishi,Eiji Hasunuma. Владелец: Mitsubishi Electric Corp. Дата публикации: 2003-02-13.

Method of manufacturing a semiconductor device

Номер патента: US6596582B2. Автор: Yoshinori Tanaka,Yoshitaka Fujiishi,Eiji Hasunuma. Владелец: Mitsubishi Electric Corp. Дата публикации: 2003-07-22.

Semiconductor devices having a supporter and methods of fabricating the same

Номер патента: US09601494B2. Автор: Seung-Jun Lee,Dae-Ik Kim,Young-Seung Cho,Kyung-Eun KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-03-21.

Thermoelectric element, method of manufacturing the same and semiconductor device including the same

Номер патента: US09917240B2. Автор: Ho-jin Park,Kwang-Ho Kim,Jun-Hyeok Yang,Hyung-Jong Ko,Se-Ki Kim,Se-Ra An. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-03-13.

Stacked package structure and method of forming a package-on-package device including an electromagnetic shielding layer

Номер патента: US09520387B2. Автор: Yong-Hoon Kim,Seong-Ho Shin,Hee-Seok Lee,Yun-Hee Lee,Se-Ho YOU. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-12-13.

Semiconductor device and method of manufacturing semiconductor device

Номер патента: US8928002B2. Автор: Satoshi Hatsukawa. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2015-01-06.

Semiconductor device and method of manufacturing semiconductor device

Номер патента: US20140001482A1. Автор: Satoshi Hatsukawa. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2014-01-02.

Polyimide resin composition for semiconductor devices, method of forming film in semiconductor devices using the same and semiconductor devices

Номер патента: TW201137039A. Автор: Junichi Yamashita,Toshiyuki Goshima,Maw Soe Win,Ken Takanashi,Sigemasa Segawa. Владелец: Pi R & Amp D Co Ltd. Дата публикации: 2011-11-01.

Physical unclonable device and method of maximizing existing process variation for a physically unclonable device

Номер патента: US20190356314A1. Автор: Shih-Lien Linus Lu,Cormac Michael O'CONNELL,Kun-Hsi Li. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2019-11-21.

Semiconductor device and method of wire bonding for semiconductor device

Номер патента: US20040188858A1. Автор: Yoshifumi Watanabe. Владелец: Denso Corp. Дата публикации: 2004-09-30.

Method to produce a 3D multilayer semiconductor device and structure

Номер патента: US12100658B2. Автор: Zvi Or-Bach,Jin-Woo Han. Владелец: Monolithic 3D Inc. Дата публикации: 2024-09-24.

Semiconductor devices and methods of fabricating the same

Номер патента: US09978932B2. Автор: KEN Tokashiki,Vladimir Urazaev,Jongchul Park,Sangmin Lee,Gwang-Hyun Baek,Sechung Oh,Jaehun SEO,Hyungjoon Kwon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-05-22.

Light emitting device and method of manufacturing the light emitting device

Номер патента: US09966515B2. Автор: Atsushi Bando,Ryoji NAKA. Владелец: Nichia Corp. Дата публикации: 2018-05-08.

Semiconductor devices having dummy patterns and methods of fabricating the same

Номер патента: US09748257B2. Автор: Jaehan Lee,Won-Seok Jung,Kyungjoong JOO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-08-29.

Semiconductor device and method of manufacturing the same

Номер патента: US09524975B2. Автор: Dae Sung EOM. Владелец: SK hynix Inc. Дата публикации: 2016-12-20.

Semiconductor devices and methods of fabricating the same

Номер патента: US09496488B2. Автор: KEN Tokashiki,Vladimir Urazaev,Jongchul Park,Sangmin Lee,Gwang-Hyun Baek,Sechung Oh,Jaehun SEO,Hyungjoon Kwon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-11-15.

Semiconductor device comprising a stacked die configuration including an integrated peltier element

Номер патента: US09490189B2. Автор: Jan Hoentschel,Sven Beyer,Thilo Scheiper,Uwe Griebenow. Владелец: Globalfoundries Inc. Дата публикации: 2016-11-08.

Semiconductor structure, preparation method of same, and semiconductor device

Номер патента: US20220238639A1. Автор: Xianlei CAO. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2022-07-28.

Semiconductor memory device and method of manufacturing semiconductor memory device

Номер патента: US20230309305A1. Автор: Kang Sik Choi. Владелец: SK hynix Inc. Дата публикации: 2023-09-28.

High power light emitting device and method of making the same

Номер патента: US09997669B2. Автор: Motonobu Takeya,Chung Hoon Lee,Michael Lim,Chang Ik IM. Владелец: Seoul Viosys Co Ltd. Дата публикации: 2018-06-12.

High stack 3D memory and method of making

Номер патента: US09666590B2. Автор: Johann Alsmeier,Henry Chien,Jayavel Pachamuthu. Владелец: SanDisk Technologies LLC. Дата публикации: 2017-05-30.

Semiconductor device and method of fabricating the same

Номер патента: US09520556B2. Автор: Hideki Horii,Jeonghee Park,Sugwoo Jung. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-12-13.

Light emitting device and method of fabricating the same

Номер патента: US20120001218A1. Автор: Hwan Hee Jeong,Sang Youl Lee,Ji Hyung Moon,Tae-yeon Seong,Kwang Ki CHOI,June O. Song,Se Yeon Jung. Владелец: LG Innotek Co Ltd. Дата публикации: 2012-01-05.

Semiconductor memory device and method of fabricating the same

Номер патента: EP1480273A3. Автор: Jung-hyun Lee,Young-soo Park,Won-Tae Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2006-02-08.

Method of manufacturing non-classical light source device, non-classical light source device, single-photon source device, and random number generator

Номер патента: US20230085370A1. Автор: Takuya Kadowaki,Tadashi Kawazoe. Владелец: Nichia Corp. Дата публикации: 2023-03-16.

Method of manufacturing nanostructure semiconductor light-emitting device

Номер патента: US09842960B2. Автор: Han Kyu Seong,Young Jin Choi,Ji Hye YEON,Jung Sub Kim,Jin Sub Lee,Jae Hyeok HEO,Dae Myung Chun,Hyun Seong KUM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-12-12.

Flexible display device and method of controlling the same

Номер патента: US09570042B2. Автор: Tae-eun Kim,Woo-Suk Jung,Soon-Ryong Park,Chul-Woo Jeong,Jung-Ho So. Владелец: Samsung Display Co Ltd. Дата публикации: 2017-02-14.

Three-dimensional memory device including wrap around word lines and methods of forming the same

Номер патента: US20210358942A1. Автор: Yanli Zhang,Fei Zhou,Raghuveer S. Makala,Rahul Sharangpani,Adarsh RAJASHEKHAR. Владелец: SanDisk Technologies LLC. Дата публикации: 2021-11-18.

Organic electroluminescence device and manufacturing method of the same

Номер патента: US20200098993A1. Автор: Minkyung KIM. Владелец: Samsung Display Co Ltd. Дата публикации: 2020-03-26.

Imaging device with reduced color mixing and method of manufacturing the same

Номер патента: US9380277B2. Автор: Masashi Nakata. Владелец: Sony Corp. Дата публикации: 2016-06-28.

Semiconductor memory device and method of manufacturing the same

Номер патента: US20210111181A1. Автор: Sang Bum Lee. Владелец: SK hynix Inc. Дата публикации: 2021-04-15.

Semiconductor memory device and method of manufacturing the same

Номер патента: US11444092B2. Автор: Sang Bum Lee. Владелец: SK hynix Inc. Дата публикации: 2022-09-13.

Method of manufacturing substrate for display device, substrate for display device, and display device

Номер патента: US20150076460A1. Автор: Yong-Kwan Kim,Yong-Hwan Park,Jin Gyu Kang,Jae Seob Lee. Владелец: Samsung Display Co Ltd. Дата публикации: 2015-03-19.

Light-emitting element, method of manufacturing light-emitting element, and display device including light-emitting element

Номер патента: US20240266332A1. Автор: Dong Uk Kim,Hyung Rae CHA,Sung Ae JANG,Ji Hyun HAM. Владелец: Samsung Display Co Ltd. Дата публикации: 2024-08-08.

Method of manufacturing a solid-state image-sensing device, and solid-state image-sensing device

Номер патента: US20060263942A1. Автор: Hirochika Narita,Ryuya Kuroda. Владелец: NEC Electronics Corp. Дата публикации: 2006-11-23.

Electroluminescent display device and method of manufacturing the same

Номер патента: US20180190739A1. Автор: Jihoon Lee,SeungHan Paek,Jeongwon Lee,Jonghoon YEO. Владелец: LG Display Co Ltd. Дата публикации: 2018-07-05.

Analog front end (afe) device for light-receiving sensor and method of controlling the same

Номер патента: US20240276123A1. Автор: Jun Hee Cho,Hyeong Seok SEO. Владелец: Solidvue Inc. Дата публикации: 2024-08-15.

Composite diode, electronic device, and methods of making the same

Номер патента: US09972798B2. Автор: Ge Jiang,Dipankar Ghosh,Rui Yang. Владелец: 3M Innovative Properties Co. Дата публикации: 2018-05-15.

Method of initializing and driving 3D non-volatile memory device using time varying erase signal

Номер патента: US09754673B2. Автор: Sang Ho Lee,Byung Gook Park,Dae Woong KWON,Do Bin KIM. Владелец: SK hynix Inc. Дата публикации: 2017-09-05.

Method of fabricating white LED devices

Номер патента: US09728686B2. Автор: Min-Jung Kim,Jeong-hee Kim,Jung-Tae OK. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-08-08.

Positioning method of photoelectric conversion device, and liquid ejecting apparatus

Номер патента: US09553214B2. Автор: Hiroyuki Kobayashi,Hideyuki Kataoka,Mitsutaka Ide. Владелец: Seiko Epson Corp. Дата публикации: 2017-01-24.

Memory device and manufacturing method of the same

Номер патента: US09425191B2. Автор: Yi-Hsuan Hsiao,Shih-Hung Chen,Hang-Ting Lue,Yen-Hao Shih. Владелец: Macronix International Co Ltd. Дата публикации: 2016-08-23.

Dielectric retention and method of forming memory pillar

Номер патента: US20210399212A1. Автор: Michael RIZZOLO,Theodorus E. Standaert,Mona A. Ebrish,Saba Zare. Владелец: International Business Machines Corp. Дата публикации: 2021-12-23.

Image Device and Methods of Forming the Same

Номер патента: US20150255503A1. Автор: Shih-Chi Fu,Ching-Sen Kuo,Wen-Chen LU,Ming-Ying Hsieh. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2015-09-10.

Touch sensor, method of manufacturing the same and image display device including the same

Номер патента: US20200091358A1. Автор: Sang Jin Park,Jong Hee Kim,Do Hyoung KWON,Han Tae RYU,Jun Gu LEE,Sung Jin NOH. Владелец: Dongwoo Fine Chem Co Ltd. Дата публикации: 2020-03-19.

Touch sensor, method of manufacturing the same and image display device including the same

Номер патента: US11329173B2. Автор: Sang Jin Park,Jong Hee Kim,Do Hyoung KWON,Han Tae RYU,Jun Gu LEE,Sung Jin NOH. Владелец: Dongwoo Fine Chem Co Ltd. Дата публикации: 2022-05-10.

Light emitting device having wide beam angle and method of fabricating the same

Номер патента: US20150325752A1. Автор: Chung Hoon Lee,Hyun A Kim,Joon Sup LEE,Min Woo Kang,Jong Min JANG,Jong Hyeon Chae,Daewoong Suh,Won Young Roh,Seon Min Bae. Владелец: Seoul Viosys Co Ltd. Дата публикации: 2015-11-12.

Display device and method of manufacturing the same

Номер патента: US20240379917A1. Автор: Dae Hyun Kim,Je Won YOO,Bek Hyun LIM,Hyun Min Cho,Keun Kyu SONG,Sung Chan Jo. Владелец: Samsung Display Co Ltd. Дата публикации: 2024-11-14.

Semiconductor device, method of manufacturing the same and electronic device including the device

Номер патента: US20230369489A1. Автор: Huilong Zhu. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2023-11-16.

Organic EL lighting emitting device, method of manufacturing the same, and organic EL light source device

Номер патента: US9196854B2. Автор: Yasuhiko Takamatsu. Владелец: Ricoh Co Ltd. Дата публикации: 2015-11-24.

Base energy setting method of Auger electron spectroscopy analysis for titanium nitride film, and analyzing method of titanium nitride film and semiconductor devices having titanium nitride film thereby

Номер патента: TW502112B. Автор: Sang-eun Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2002-09-11.

Light emitting device and method of manufacturing the same

Номер патента: US09978921B2. Автор: Jae Joon Yoon. Владелец: LG Innotek Co Ltd. Дата публикации: 2018-05-22.

Light emitting device and method of manufacturing the same

Номер патента: US09831409B2. Автор: Jae Joon Yoon. Владелец: LG Innotek Co Ltd. Дата публикации: 2017-11-28.

Light emitting device and method of manufacturing the same

Номер патента: US09461223B2. Автор: Jae Joon Yoon. Владелец: LG Innotek Co Ltd. Дата публикации: 2016-10-04.

Interposer including air gap structure, methods of forming the same, semiconductor device including the interposer, and multi-chip package including the interposer

Номер патента: US20120074530A1. Автор: Kyung-Ho Kim,Chang-Hyun Kim. Владелец: Individual. Дата публикации: 2012-03-29.

CAPACITOR, METHOD OF FORMING A CAPACITOR, SEMICONDUCTOR DEVICE INCLUDING A CAPACITOR AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

Номер патента: US20130217203A1. Автор: KWON Oh-Seong,CHO Kyu-ho,KIM Wan-don,KIM Beom-Seok,TAK Yong-Suk. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2013-08-22.

Semiconductor pressure sensor and method of manufacturing same

Номер патента: USRE34893E. Автор: Tetsuo Fujii,Osamu Ina,Susumu Kuroyanagi,Yoshitaka Gotoh. Владелец: NipponDenso Co Ltd. Дата публикации: 1995-04-04.

Semiconductor device and method of fabricating the same

Номер патента: US20240206153A1. Автор: Shuxian Wu,Huihuang TANG. Владелец: Fujian Jinhua Integrated Circuit Co Ltd. Дата публикации: 2024-06-20.

Variable resistance memory device and manufacturing method of the same

Номер патента: US20220102628A1. Автор: Jae Hyun Han. Владелец: SK hynix Inc. Дата публикации: 2022-03-31.

CAPACITOR STRUCTURE, METHOD OF FORMING THE SAME, SEMICONDUCTOR DEVICE INCLUDING THE CAPACITOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME

Номер патента: US20210202691A1. Автор: Kim Suhwan,Park Seongyul,Kim Hyunjun,Chang Jaewan. Владелец: . Дата публикации: 2021-07-01.

Capacitor structure, method of forming the same, semiconductor device including the capacitor structure and method of manufacturing the same

Номер патента: US20220254873A1. Автор: Hyunjun Kim,Suhwan Kim,Seongyul Park,Jaewan Chang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-08-11.

Optoelectronic semiconductor device with nanorod array

Номер патента: US11949039B2. Автор: Boon S. OOI,Tien Khee Ng,Aditya PRABASWARA,Jung-Wook MIN. Владелец: King Abdullah University of Science and Technology KAUST. Дата публикации: 2024-04-02.

Semiconductor device and method of fabricating the same

Номер патента: US11804459B2. Автор: Jinho PARK,Jeong Hoon Ahn,Chin Kim,Yongseung Bang,Jiyeon Baek. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-10-31.

Optoelectronic semiconductor device

Номер патента: US20210376184A1. Автор: Boon S. OOI,Tien Khee Ng,Aditya PRABASWARA,Jung-Wook MIN. Владелец: King Abdullah University of Science and Technology KAUST. Дата публикации: 2021-12-02.

Semiconductor device and method of fabricating the same

Номер патента: US20230395541A1. Автор: Jinho PARK,Jeong Hoon Ahn,Chin Kim,Yongseung Bang,Jiyeon Baek. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-12-07.

Semiconductor device and method of fabricating the same

Номер патента: US20230422481A1. Автор: Yu-Cheng Tung,Janbo Zhang. Владелец: Fujian Jinhua Integrated Circuit Co Ltd. Дата публикации: 2023-12-28.

Semiconductor device having metal bump and method of manufacturing the same

Номер патента: US20190206816A1. Автор: Won-Young Kim,Chanho LEE,Jinchan AHN. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-07-04.

Semiconductor device having metal bump and method of manufacturing the same

Номер патента: US20200343204A1. Автор: Won-Young Kim,Chanho LEE,Jinchan AHN. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-10-29.

Method of forming a bump electrode and manufacturing a resin-encapsulated semiconductor device

Номер патента: US5172851A. Автор: Akira Matsushita,Hidekazu Konishi. Владелец: Matsushita Electronics Corp. Дата публикации: 1992-12-22.

Semiconductor device having an optical device degradation sensor

Номер патента: EP4166957A1. Автор: Hans Reisinger,Thomas Aichinger,Andre Kabakow,Maximilian Wolfgang FEIL. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2023-04-19.

Semiconductor device having an optical device degradation sensor

Номер патента: US11940489B2. Автор: Hans Reisinger,Thomas Aichinger,Andre Kabakow,Maximilian Wolfgang FEIL. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2024-03-26.

Semiconductor device and method of fabricating the same

Номер патента: US20240040773A1. Автор: Tsuo-Wen Lu,Mingqin Shangguan,Changfu Ye,Xiqin Wang. Владелец: Fujian Jinhua Integrated Circuit Co Ltd. Дата публикации: 2024-02-01.

METHODS OF FORMING CAPACITORS AND SEMICONDUCTOR DEVICES INCLUDING A RUTILE TITANIUM DIOXIDE MATERIAL

Номер патента: US20130260529A1. Автор: Bhat Vishwanath,CARLSON Chris,Huang Tsai-Yu,Antonov Vassil,Hsieh Chun-I. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2013-10-03.

METHODS OF FORMING VERTICAL TYPE SEMICONDUCTOR DEVICES INCLUDING OXIDATION TARGET LAYERS

Номер патента: US20150187790A1. Автор: YANG Jun-Kyu,Hwang Ki-Hyun,Ahn Jae-Young,Nam Phil-Ouk,Jang Byong-hyun. Владелец: . Дата публикации: 2015-07-02.

METHODS OF FORMING A CAPACITOR, SEMICONDUCTOR DEVICE, AND FINE PATTERN, AND SEMICONDUCTOR DEVICE FORMED BY THE METHODS

Номер патента: US20200312853A1. Автор: Park Sejin,Bae Jinwoo,CHOI Yoonyoung,YIM Sungsoo,KANG Byeongmoo,KOO Seongmo. Владелец: . Дата публикации: 2020-10-01.

Method Of Forming Bump And Semiconductor device including The Same

Номер патента: KR102006637B1. Автор: 이학선,배현철,최광성,엄용성. Владелец: 한국전자통신연구원. Дата публикации: 2019-10-01.

Polymer for forming resist protection film, composition for forming resist protection film, and method of forming patterns of semiconductor devices using the composition

Номер патента: EP2402377B1. Автор: Hyun Jin Kim,Man Ho Han,Jong Kyoung Park,Deog Bae Kim. Владелец: Dongjin Semichem Co Ltd. Дата публикации: 2013-06-26.

Test structure of a semiconductor device, method of forming the same, semiconductor device and method of manufacturing the same

Номер патента: KR101330084B1. Автор: 김지혜,정세영. Владелец: 삼성전자주식회사. Дата публикации: 2013-11-18.

Method of making thermo compression bonded semiconductor device

Номер патента: AU3497371A. Автор: FUJIWARA Shohei. Владелец: Matsushita Electronics Corp. Дата публикации: 1973-05-03.

Method of making thermo compression bonded semiconductor device

Номер патента: AU454608B2. Автор: FUJIWARA Shohei. Владелец: Matsushita Electronics Corp. Дата публикации: 1974-10-31.

Display device, method of manufacturing the same, and tiled display device including the same

Номер патента: EP4287255B1. Автор: Seung Min Lee,Seung Min Song,Il You,Sae Hee RYU. Владелец: Samsung Display Co Ltd. Дата публикации: 2024-10-09.

Method of forming bump of semiconductor device and bump formed by using the same

Номер патента: KR100809706B1. Автор: 강운병,이충선,권용환,권운성,장형선. Владелец: 삼성전자주식회사. Дата публикации: 2008-03-06.

Light emitting diode packages, light emitting diode systems and methods of manufacturing the same

Номер патента: US20090278151A1. Автор: YuSik Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2009-11-12.

Mram, method of manufacturing the same, and electronic device including the mram

Номер патента: US20190157345A1. Автор: Chao Zhao,Huilong Zhu,Junjie Li. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2019-05-23.

Image sensor, method of sensing image, and electronic device including the same with different resolutions

Номер патента: US11974059B2. Автор: Hyuck Choo,Jungwoo Kim,Myunghwa Jung. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-04-30.

ELECTRODE AND METHOD OF FORMING THE SAME AND ELECTRONIC DEVICE INCLUDING THE SAME

Номер патента: US20130340815A1. Автор: LEE Eun-sung,Park Jin-Man,Kim Se-Yun,Jee Sang-Soo,KIM Suk-Jun,SONG In-yong. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2013-12-26.

Method of forming pattern of semiconductor device from which various types of pattern defects are removed

Номер патента: US20170148689A1. Автор: No-Young Chung,Sang-Wook Park,Heung-Kook Ko. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-05-25.

MAGNETIC STRUCTURES, METHODS OF FORMING THE SAME AND MEMORY DEVICES INCLUDING A MAGNETIC STRUCTURE

Номер патента: US20150357558A1. Автор: Lee Sung-chul,Kim Kwang-seok. Владелец: . Дата публикации: 2015-12-10.

Contact sensitive device, display apparatus including the same and method of manufacturing the same

Номер патента: US10318051B2. Автор: Yongwoo Lee,Taeheon Kim,Yuseon Kho,Seulgi CHOI,Yong-Su Ham,Myungjin LIM. Владелец: LG Display Co Ltd. Дата публикации: 2019-06-11.

A photosensitive semiconductor device, a method of forming a photosensitive semiconductor device

Номер патента: DE102018107611A1. Автор: Manuel Schmidt. Владелец: Vishay Semiconductor GmbH. Дата публикации: 2019-10-02.

Layer structure and method of producing the same, method of forming patterns, and semiconductor device

Номер патента: TW201628058A. Автор: 金旼秀,宋炫知,姜善惠,金成旻,金永珉,金惠廷,南沇希,尹星莉,洪承希,李松世,金命九,白載烈,金瑆煥,鄭瑟基,李忠憲,金潤俊,尹龍雲,趙姸熹,黃善民,黃元宗,劉奈莉. Владелец: 三星Sdi 股份有限公司. Дата публикации: 2016-08-01.

Polyimide resin composition for semiconductor devices, method of forming film in semiconductor devices using the same and semiconductor devices

Номер патента: US8987376B2. Автор: Junichi Yamashita,Toshiyuki Goshima,Maw Soe Win,Ken Takanashi,Sigemasa Segawa. Владелец: PI R&D Co Ltd. Дата публикации: 2015-03-24.

Germanium based metal-insulator transition thin film, metal-insulator transition device including the metal-insulator transition thin film, and method of fabricating the metal-insulator transition device

Номер патента: WO2009017305A1. Автор: Hyun-Tak Kim,Yong-Wook Lee,Bong-Jun Kim,Sung-Youl CHOI,Jae-Yeob Shim. Владелец: Electronics and Telecommunications Research Institute. Дата публикации: 2009-02-05.

Semiconductor nanocrystal particles and devices including the same

Номер патента: US11767472B2. Автор: Eun Joo Jang,Tae Hyung Kim,Jeong Hee Lee,Hyun A Kang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-09-26.

Light emitting device and display device including the same

Номер патента: EP3613826A1. Автор: Eun Joo Jang,Tae Hyung Kim,Kwanghee Kim,Yuho WON,Dae Young Chung,Heejae Lee,Hongkyu SEO,Oul CHO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-02-26.

High power light emitting device and method of making the same

Номер патента: US20160043276A1. Автор: Motonobu Takeya,Chung Hoon Lee,Michael Lim,Chang Ik IM. Владелец: Seoul Viosys Co Ltd. Дата публикации: 2016-02-11.

Semiconductor device defect analysis method

Номер патента: US20220236314A1. Автор: Hakgyun KIM,Bumsuk CHUNG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-07-28.

Germanium based metal-insulator transition thin film, metal-insulator transition device including the metal-insulator transition thin film, and method of fabricating the metal-insulator transition device

Номер патента: US20110233616A1. Автор: Hyun-Tak Kim,Yong-Wook Lee,Bong-Jun Kim,Sung-Youl CHOI,Jae-Yeob Shim. Владелец: Electronics and Telecommunications Research Institute ETRI. Дата публикации: 2011-09-29.

Light-emitting element, method of manufacturing light-emitting element, and display device including light-emitting element

Номер патента: US20220069164A1. Автор: Won Sik Oh,Byung Ju Lee,Seung Geun LEE,Seung A LEE. Владелец: Samsung Display Co Ltd. Дата публикации: 2022-03-03.

Light emitting device and display device including the same

Номер патента: US20200083470A1. Автор: Eun Joo Jang,Tae Hyung Kim,Kwanghee Kim,Yuho WON,Dae Young Chung,Hongkyu SEO,Hee Jae Lee,Oul CHO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-03-12.

Light emitting device and display device including the same

Номер патента: US20210226145A1. Автор: Eun Joo Jang,Tae Hyung Kim,Kwanghee Kim,Yuho WON,Dae Young Chung,Hongkyu SEO,Hee Jae Lee,Oul CHO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-07-22.

Semiconductor nanocrystal particles and devices including the same

Номер патента: US20230392074A1. Автор: Eun Joo Jang,Tae Hyung Kim,Jeong Hee Lee,Hyun A Kang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-12-07.

Resistive memory cells including localized filamentary channels, devices including the same, and methods of making the same

Номер патента: US20170271583A1. Автор: Brian S. Doyle,Uday Shah,Robert S. Chau,Ravi Pillarisetty,Elijah V. KARPOV,Prashant Majhi,Niloy Mukherjee. Владелец: Intel Corp. Дата публикации: 2017-09-21.

Method of forming capacitor of semiconductor device

Номер патента: CN1129171C. Автор: 林灿. Владелец: Hyundai Electronics Industries Co Ltd. Дата публикации: 2003-11-26.

Method of forming capacitor of semiconductor device

Номер патента: KR100503964B1. Автор: 조일현. Владелец: 매그나칩 반도체 유한회사. Дата публикации: 2005-07-26.

Electronic device having thermally managed electron path and method of thermal management of very cold electrons

Номер патента: US8421072B2. Автор: Steven H. Simon. Владелец: Alcatel Lucent SAS. Дата публикации: 2013-04-16.

Method of forming pad of semiconductor device

Номер патента: US20070161222A1. Автор: Tae Ho Kim. Владелец: Dongbu Electronics Co Ltd. Дата публикации: 2007-07-12.

Separator, method of manufacturing separator, and electrochemical device including separator

Номер патента: US12113239B2. Автор: Tae Wook Kwon,Chang Hee Lee,Won Sub KWACK,Heung Taek Bae. Владелец: SK IE Technology Co Ltd. Дата публикации: 2024-10-08.

Separator, method of manufacturing separator, and electrochemical device including separator

Номер патента: US20240297407A1. Автор: Tae Wook Kwon,Yun Bong Kim,Kyu Young Cho,Heung Taek Bae. Владелец: SK IE Technology Co Ltd. Дата публикации: 2024-09-05.

Separator, method of manufacturing the separator, and electrochemical device including the separator

Номер патента: US20240297406A1. Автор: Tae Wook Kwon,Heung Taek Bae. Владелец: SK IE Technology Co Ltd. Дата публикации: 2024-09-05.

Separator, method of manufacturing separator, and electrochemical device including separator

Номер патента: US12126046B2. Автор: Tae Wook Kwon,Chang Hee Lee,Won Sub KWACK,Heung Taek Bae. Владелец: SK IE Technology Co Ltd. Дата публикации: 2024-10-22.

Field emission device having field emitter including photoelectric material and method of manufacturing the same

Номер патента: US09478385B2. Автор: Jae-Woo Kim,Jin Woo Jeong,Sungyoul Choi,Yoon-Ho Song,Jun Tae Kang,Jeong Yong CHOI. Владелец: Electronics and Telecommunications Research Institute ETRI. Дата публикации: 2016-10-25.

Systems and leads with a radially segmented electrode array and methods of manufacture

Номер патента: US20130160287A1. Автор: Anne Margaret Pianca. Владелец: Boston Scientific Neuromodulation Corp. Дата публикации: 2013-06-27.

Separator, method of manufacturing separator, and electrochemical device including separator

Номер патента: EP4290668A1. Автор: Tae Wook Kwon,Chang Hee Lee,Won Sub KWACK,Heung Taek Bae. Владелец: SK IE Technology Co Ltd. Дата публикации: 2023-12-13.

Separator, method of manufacturing separator, and electrochemical device including separator

Номер патента: EP4300696A2. Автор: Tae Wook Kwon,Chang Hee Lee,Won Sub KWACK,Heung Taek Bae. Владелец: SK IE Technology Co Ltd. Дата публикации: 2024-01-03.

Separator, method of manufacturing separator, and electrochemical device including separator

Номер патента: EP4300696A3. Автор: Tae Wook Kwon,Chang Hee Lee,Won Sub KWACK,Heung Taek Bae. Владелец: SK IE Technology Co Ltd. Дата публикации: 2024-03-27.

Separator, method of manufacturing the separator, and electrochemical device including the separator

Номер патента: EP4379883A1. Автор: Tae Wook Kwon,Heung Taek Bae. Владелец: SK IE Technology Co Ltd. Дата публикации: 2024-06-05.

Separator, method of manufacturing the separator, and electrochemical device including the separator

Номер патента: US20240195012A1. Автор: Tae Wook Kwon,Heung Taek Bae. Владелец: SK IE Technology Co Ltd. Дата публикации: 2024-06-13.

Magnetic structures, methods of forming the same and memory devices including a magnetic structure

Номер патента: US20130175646A1. Автор: Sung-Chul Lee,Kwang-Seok Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2013-07-11.

HEATING ELEMENT STRUCTURE, METHOD OF FORMING THE SAME, AND HEATING DEVICE INCLUDING THE HEATING ELEMENT STRUCTURE

Номер патента: US20190037645A1. Автор: LEE Changsoo,KIM Doyoon,KIM Seyun,KIM Jinhong,MIZUSAKI Soichiro,Koh Haengdeog,Kim Hajin,Bae Minjong. Владелец: . Дата публикации: 2019-01-31.

Heating element structure, method of forming the same, and heating device including the heating element structure

Номер патента: EP3439426A1. Автор: Changsoo LEE,Jinhong Kim,Doyoon KIM,Seyun KIM,Haengdeog Koh,Hajin Kim,Soichiro Mizusaki,Minjong Bae. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-02-06.

Magnetic structure, method of forming the same and memory device including magnetic structure

Номер патента: KR101881933B1. Автор: 이성철,김광석. Владелец: 삼성전자주식회사. Дата публикации: 2018-07-26.

Separator, method of manufacturing separator, and electrochemical device including separator

Номер патента: US11811090B1. Автор: Tae Wook Kwon,Chang Hee Lee,Won Sub KWACK,Heung Taek Bae. Владелец: SK IE Technology Co Ltd. Дата публикации: 2023-11-07.

Separator, method of manufacturing separator, and electrochemical device including separator

Номер патента: US20230402716A1. Автор: Tae Wook Kwon,Chang Hee Lee,Won Sub KWACK,Heung Taek Bae. Владелец: SK IE Technology Co Ltd. Дата публикации: 2023-12-14.

Separator, method of manufacturing separator, and electrochemical device including separator

Номер патента: US20240021955A1. Автор: Tae Wook Kwon,Chang Hee Lee,Won Sub KWACK,Heung Taek Bae. Владелец: SK IE Technology Co Ltd. Дата публикации: 2024-01-18.

Separator for secondary battery, method of manufacturing the separator, and secondary battery including separator

Номер патента: EP4290666A1. Автор: Tae Wook Kwon,Heung Taek Bae. Владелец: SK IE Technology Co Ltd. Дата публикации: 2023-12-13.

Separator, method of manufacturing separator, and electrochemical device including separator

Номер патента: EP4290634A1. Автор: Tae Wook Kwon,Yun Bong Kim,Kyu Young Cho,Heung Taek Bae. Владелец: SK IE Technology Co Ltd. Дата публикации: 2023-12-13.

Separator, method of manufacturing separator, and electrochemical device including separator

Номер патента: EP4290670A1. Автор: Tae Wook Kwon,Chang Hee Lee,Won Sub KWACK,Heung Taek Bae. Владелец: SK IE Technology Co Ltd. Дата публикации: 2023-12-13.

Separator, method of manufacturing separator, and electrochemical device including separator

Номер патента: US20230402715A1. Автор: Tae Wook Kwon,Chang Hee Lee,Won Sub KWACK,Heung Taek Bae. Владелец: SK IE Technology Co Ltd. Дата публикации: 2023-12-14.

Separator, method of manufacturing separator, and electrochemical device including separator

Номер патента: US20230402711A1. Автор: Tae Wook Kwon,Yun Bong Kim,Kyu Young Cho,Heung Taek Bae. Владелец: SK IE Technology Co Ltd. Дата публикации: 2023-12-14.

Separator, method of manufacturing the separator, and electrochemical device including the separator

Номер патента: US20230402713A1. Автор: Tae Wook Kwon,Heung Taek Bae. Владелец: SK IE Technology Co Ltd. Дата публикации: 2023-12-14.

Composite separator, method of manufacturing the same, and electrochemical device including the same

Номер патента: EP4178022A1. Автор: Yun Bong Kim,Sang Yoon Ji. Владелец: SK IE Technology Co Ltd. Дата публикации: 2023-05-10.

Separator, method of manufacturing the separator, and electrochemical device including the separator

Номер патента: US12021257B2. Автор: Tae Wook Kwon,Heung Taek Bae. Владелец: SK IE Technology Co Ltd. Дата публикации: 2024-06-25.

Separator, method of manufacturing separator, and electrochemical device including separator

Номер патента: US12015170B2. Автор: Tae Wook Kwon,Yun Bong Kim,Kyu Young Cho,Heung Taek Bae. Владелец: SK IE Technology Co Ltd. Дата публикации: 2024-06-18.

Method of analyzing lattice strain of semiconductor device

Номер патента: US10410332B2. Автор: Gwang-Seon Byun,Myoung-Ki Ahn,Han-Saem Park,Hyun-koo KWAK,Su-Bong Shon,Ung-Keun Cho. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-09-10.

Method of analyzing lattice strain of semiconductor device

Номер патента: US20180012348A1. Автор: Gwang-Seon Byun,Myoung-Ki Ahn,Han-Saem Park,Hyun-koo KWAK,Su-Bong Shon,Ung-Keun Cho. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-01-11.

Organic semiconductor structure, manufacturing method of the same, and organic semiconductor device

Номер патента: US20060113526A1. Автор: Hiroki Maeda,Junichi Hanna,Hiroaki Iino. Владелец: DAI NIPPON PRINTING CO LTD. Дата публикации: 2006-06-01.

Method of measuring trench depth of semiconductor device

Номер патента: US6500683B1. Автор: Masakazu Nakabayashi,Tadayuki Yoshiyama. Владелец: Mitsubishi Electric Corp. Дата публикации: 2002-12-31.

Method of fabrication of an amorphous semiconductor device on a substrate

Номер патента: US4167806A. Автор: Pierre Kumurdjian. Владелец: Commissariat a lEnergie Atomique CEA. Дата публикации: 1979-09-18.

Methods of correcting data errors and semiconductor devices used therein

Номер патента: US20170371746A1. Автор: Chang Hyun Kim. Владелец: SK hynix Inc. Дата публикации: 2017-12-28.

Memory device, method of forming the same, and semiconductor device having the same

Номер патента: US11737287B2. Автор: Yu-Chao Lin,Jung-Piao Chiu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-08-22.

Method of fabricating a micro-electromechanical fluid ejection device having enhanced actuator strength

Номер патента: US20050055829A1. Автор: Kia Silverbrook. Владелец: SILVERBROOK RESEARCH PTY LTD. Дата публикации: 2005-03-17.

Memory device and method of forming the same

Номер патента: US12089414B2. Автор: Yih Wang,Yu-Ming Lin,Sai-Hooi Yeong,Bo-Feng YOUNG,Shih-Lien Linus Lu,Chia-En HUANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-10.

Semiconductor device and method for fabricating the same

Номер патента: US20240341080A1. Автор: Seung Hwan Kim,Gil Seop KIM. Владелец: SK hynix Inc. Дата публикации: 2024-10-10.

Method of forming metal ion transistor

Номер патента: US20100184280A1. Автор: Fen Chen,Armin Fischer. Владелец: Individual. Дата публикации: 2010-07-22.

Source device and method of transmitting content

Номер патента: US09756385B1. Автор: Sung-Bo Oh. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-09-05.

Electronic device and method of its control

Номер патента: RU2641480C2. Автор: Янг-ик ДЗАНГ,Чанг-йонг КИМ,Дзонг-хиук ДЗАНГ,Дзеа-хее ХАН. Владелец: САМСУНГ ЭЛЕКТРОНИКС КО., ЛТД.. Дата публикации: 2018-01-17.

Method of fabricating a radiative and conductive thermal metamaterial composite

Номер патента: US20210283569A1. Автор: Ercan M. Dede. Владелец: Toyota Motor Engineering and Manufacturing North America Inc. Дата публикации: 2021-09-16.

Method of assigning identification codes to devices in a network

Номер патента: US20130089157A1. Автор: Kai Chi Chan,Man Yin Arthur Newton Chu. Владелец: Defond Components Ltd. Дата публикации: 2013-04-11.

Semiconductor device, and programming method and programming system therefor

Номер патента: US8106681B2. Автор: Tadashi Fujita. Владелец: Renesas Electronics Corp. Дата публикации: 2012-01-31.

Electroluminescent device, method of manufacturing the same, and display device including the same

Номер патента: US20240099045A1. Автор: Tae Ho Kim,Moon Gyu Han,Shin Ae Jun,Jun-mo Yoo,Dae Young Chung,Heejae Lee,Ilyoung LEE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-03-21.

Cover window, manufacturing method of cover window, and display device including cover window

Номер патента: US20220321159A1. Автор: Cheol Min Park,Seung Ho Kim,Byeong-Beom Kim,Byung Hoon Kang,Hoi Kwan Lee,Chang Moo LEE. Владелец: Samsung Display Co Ltd. Дата публикации: 2022-10-06.

Cover window, manufacturing method of cover window, and display device including cover window

Номер патента: US12119859B2. Автор: Cheol Min Park,Seung Ho Kim,Byeong-Beom Kim,Byung Hoon Kang,Hoi Kwan Lee,Chang Moo LEE. Владелец: Samsung Display Co Ltd. Дата публикации: 2024-10-15.

Method of operating nonvolatile memory device, nonvolatile memory device and memory controller performing the same

Номер патента: US12033706B2. Автор: Byungchul Jang,Joonsung Lim,Junyeong Seok,Younggul SONG,Eunchu Oh. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-09.

Methods of securely controlling utility grid edge devices

Номер патента: US20220337082A1. Автор: David Crawford Lawrence,Thomas E. Burdick,Marshal Dwayne Bradley,Jessica C. Modeen,Nicholas J. Kennedy,Matthew A. DeVenny,Caleb J. Lloyd,C. Wilson Kinard. Владелец: Open Energy Solutions Inc. Дата публикации: 2022-10-20.

Memory device and method of manufacturing memory device

Номер патента: US20240260269A1. Автор: Hyun Mi HWANG. Владелец: SK hynix Inc. Дата публикации: 2024-08-01.

Memory device having planarized fins and method of manufacturing the same

Номер патента: US20240341077A1. Автор: Ying-Cheng Chuang. Владелец: Nanya Technology Corp. Дата публикации: 2024-10-10.

Memory device storing logical page data and operating method of the memory device

Номер патента: US12106806B2. Автор: Jeong Hwan Kim,Jae Woong Kim,In Su Park,Jung Dal Choi,Jung Shik JANG,Woo Pyo Jeong. Владелец: SK hynix Inc. Дата публикации: 2024-10-01.

Method of operating nonvolatile memory device, nonvolatile memory device and memory controller performing the same

Номер патента: US20240311011A1. Автор: Eun Chu Oh,Byungchul Jang,Joonsung Lim,Junyeong Seok,Younggul SONG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-09-19.

Memory device having planarized fins and method of manufacturing the same

Номер патента: US20240341078A1. Автор: Ying-Cheng Chuang. Владелец: Nanya Technology Corp. Дата публикации: 2024-10-10.

Display device and method of compensating for degradation of display device

Номер патента: US20240233664A9. Автор: Seokha Hong,Jong-Woong Park. Владелец: Samsung Display Co Ltd. Дата публикации: 2024-07-11.

Vision sensor, event signal processing method of the vision sensor, and imaging processing device including the vision sensor

Номер патента: US20240276109A1. Автор: Junseok Kim,Junhyuk Park,Bongki Son,Keunjoo Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-08-15.

Display device and method of compensating for degradation of display device

Номер патента: US12125451B2. Автор: Seokha Hong,Jong-Woong Park. Владелец: Samsung Display Co Ltd. Дата публикации: 2024-10-22.

Video display device and method of displaying video

Номер патента: US09462218B2. Автор: Eunhyung Cho. Владелец: LG ELECTRONICS INC. Дата публикации: 2016-10-04.

Method of adjusting frequency of resonation device and method of manufacturing resonation device

Номер патента: US09444466B2. Автор: Kensaku ISOHATA. Владелец: Seiko Epson Corp. Дата публикации: 2016-09-13.

Method of setting button function for device and setting apparatus

Номер патента: US20210048977A1. Автор: Che-Ching Lien. Владелец: Tymphany Acoustic Technology Co Ltd. Дата публикации: 2021-02-18.

Medical device and method of operating a medical device

Номер патента: US20230053885A1. Автор: Stefan Dietrich. Владелец: OLYMPUS Winter and Ibe GmbH. Дата публикации: 2023-02-23.

Transmission devices, receiving devices and methods of sharing data

Номер патента: US09661671B2. Автор: Chin-Ying Hsieh,Yanni HUANG,Kai-Wen Liu,Zhonge Wu. Владелец: Mediatek Singapore Pte Ltd. Дата публикации: 2017-05-23.

Method of providing notification and electronic device thereof

Номер патента: US09509828B2. Автор: Sung-Hyuk Shin,Ki-Huk Lee,Kyung-Hee Lee,Chang-Ryong Heo,Chi-Hyun CHO,Ken-Hyung Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-11-29.

Organic electroluminescence device and manufacturing method of the same

Номер патента: EP3627579A1. Автор: Minkyung KIM. Владелец: Samsung Display Co Ltd. Дата публикации: 2020-03-25.

Display Device, A Front Frame Used Therein, and A Method of Manufacture Thereof

Номер патента: US20110164362A1. Автор: Hsin-Tao Huang,Hsiu-Mei Fang. Владелец: AU OPTRONICS CORP. Дата публикации: 2011-07-07.

Toe-based network interface device, method of operating the same, and server device including the same

Номер патента: US20240236211A9. Автор: Jangwoo Kim,Junehyuk Boo. Владелец: Mangoboost Inc. Дата публикации: 2024-07-11.

Display Device, A Front Frame Used Therein, and A Method of Manufacture Thereof

Номер патента: US20110164395A1. Автор: Hsin-Tao Huang,Hsiu-Mei Fang. Владелец: AU OPTRONICS CORP. Дата публикации: 2011-07-07.

Display device, a front frame used therein, and a method of manufacture thereof

Номер патента: US20080266771A1. Автор: Hsin-Tao Huang,Hsiu-Mei Fang. Владелец: AU OPTRONICS CORP. Дата публикации: 2008-10-30.

Toe-based network interface device, method of operating the same, and server device including the same

Номер патента: US20240137429A1. Автор: Jangwoo Kim,Junehyuk Boo. Владелец: Mangoboost Inc. Дата публикации: 2024-04-25.

Heater assembly, method of manufacturing heater assembly, and aerosol generating device including heater assembly

Номер патента: US12022879B2. Автор: Jang Won Seo,Jin Chul Jung,Chul Ho Jang,Gyoung Min Go,Jong Seong Jeong,Min Seok Jeong,Yong Joon Jang. Владелец: KT&G Corp. Дата публикации: 2024-07-02.

Touch display device, method of driving the same, and timing controller

Номер патента: US12026338B2. Автор: Young Gi Kim,Jae Woo Jeon,Hae Won Lee,Woong Jin OH. Владелец: LX Semicon Co Ltd. Дата публикации: 2024-07-02.

Quantum memory systems and quantum repeater systems comprising doped polycrystalline ceramic optical devices and methods of manufacturing the same

Номер патента: US20220270684A1. Автор: Haitao Zhang,Jun Yang,Wageesha Senaratne,Daniel Aloysius Nolan,Thomas Dale Ketcham,Stuart Gray,Jason Allen BROWN. Владелец: Corning Inc. Дата публикации: 2022-08-25.

Memory device and method of manufacturing the memory device

Номер патента: US20240244842A1. Автор: Dae Sung EOM. Владелец: SK hynix Inc. Дата публикации: 2024-07-18.

Non-volatile semiconductor memory device and method of manufacturing the same

Номер патента: US20070212835A1. Автор: Eiji Kamiya. Владелец: Individual. Дата публикации: 2007-09-13.

Non-volatile semiconductor memory device and method of manufacturing the same

Номер патента: US20110195558A1. Автор: Eiji Kamiya. Владелец: Individual. Дата публикации: 2011-08-11.

Non-volatile semiconductor memory device and method of manufacturing the same

Номер патента: US7678663B2. Автор: Eiji Kamiya. Владелец: Toshiba Corp. Дата публикации: 2010-03-16.

Method of compensating for luminance of display device

Номер патента: US12073756B2. Автор: Seunghwan Park,Sungjae Park,Jinho Lee,Namjae Lim,Kyung-Sik Joo. Владелец: Samsung Display Co Ltd. Дата публикации: 2024-08-27.

Method of operating nfc device and nfc device performing the same

Номер патента: EP4422231A1. Автор: Jaehun CHOI. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-08-28.

Method of operating nfc device and nfc device performing the same

Номер патента: US20240291517A1. Автор: Jaehun CHOI. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-08-29.

Device and method of sound interference avoidance

Номер патента: US09838530B1. Автор: Michael Robustelli,Dror Moshe. Владелец: Symbol Technologies LLC. Дата публикации: 2017-12-05.

Casing of electronic device and method of manufacturing the same

Номер патента: US09655261B2. Автор: Chien-Hung Lin,Cheng-Chieh Chuang,Chun-Lung Chu,Tim Chung-Ting Wu,Chi-Jen Lu. Владелец: HTC Corp. Дата публикации: 2017-05-16.

Non-volatile semiconductor memory device and method of manufacturing the same

Номер патента: US20100144115A1. Автор: Eiji Kamiya. Владелец: Individual. Дата публикации: 2010-06-10.

Multimedia device and play mode determination method of the same

Номер патента: US20120140119A1. Автор: Chun Wang,Tsui-Chin Chen,Jian-De Jiang,Hsiao-En CHANG. Владелец: NOVATEK MICROELECTRONICS CORP. Дата публикации: 2012-06-07.

Electronic device with flash function and driving method of flash

Номер патента: US12132997B2. Автор: Jo-Fan WU,Hui-Chi Chuang. Владелец: ASUSTeK Computer Inc. Дата публикации: 2024-10-29.

Method of handling NFC device with non-fixed low power polling number and NFC device using the same

Номер патента: US09912567B2. Автор: Alan Huang. Владелец: MediaTek Inc. Дата публикации: 2018-03-06.

Cover window, method of manufacturing the cover window, and display device including the cover window

Номер патента: US09832890B2. Автор: Myung An MIN. Владелец: Samsung Display Co Ltd. Дата публикации: 2017-11-28.

Micro-electromechanical system device and method of forming the same

Номер патента: US11878905B2. Автор: Jia Jie Xia. Владелец: Vanguard International Semiconductor Corp. Дата публикации: 2024-01-23.

Micro-electromechanical system device and method of forming the same

Номер патента: US11825750B2. Автор: Jia Jie Xia. Владелец: Vanguard International Semiconductor Corp. Дата публикации: 2023-11-21.

Method of Forming Phase-Change Memory Layers on Recessed Electrodes

Номер патента: US20230309424A1. Автор: Jau-Yi Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-09-28.

Image signal processor, operation method of image signal processor, and image sensor device including image signal processor

Номер патента: US20240244342A1. Автор: Ji Hwan Park,Ildo Kim,Sukhwan Lim,Seungwon Choi,Ser Hoon Lee,Jongseong Choi,Kyuyul CHOI. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-18.

Methods of forming a pram having a phase-change layer pattern confined in a node isolating layer pattern

Номер патента: KR100615583B1. Автор: 조병옥. Владелец: 삼성전자주식회사. Дата публикации: 2006-08-25.

Methods of writing and forming memory device

Номер патента: US20240215262A1. Автор: Chien-Min Lee,Xinyu Bao,Shy-Jay Lin,Tung-Ying Lee,Yen-Lin Huang,Ming-Yuan Song. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-06-27.

Method of fabricating micro-electromechanical system device

Номер патента: US20240116749A1. Автор: Jia Jie Xia. Владелец: Vanguard International Semiconductor Corp. Дата публикации: 2024-04-11.

Semiconducor device and method of fabricating the same

Номер патента: US20240049476A1. Автор: Euipil Kwon. Владелец: Individual. Дата публикации: 2024-02-08.

Memory devices, semiconductor devices, and methods of operating a memory device

Номер патента: US11903188B2. Автор: Yu-Wei Lin,Yih Wang,Yoshitaka Yamauchi,Shao-Yu Chou,Perng-Fei Yuh,Jui-che Tsai,Keh-Jeng Chang,Meng-Sheng CHANG,Ku-Feng Lin,Philex Ming-Yan Fan,Chansyun David Yang,Tzu-Hsien YANG,Shao-Ting WU. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-02-13.

Memory devices, semiconductor devices, and methods of operations a memory device

Номер патента: US20240147711A1. Автор: Yu-Wei Lin,Yih Wang,Yoshitaka Yamauchi,Shao-Yu Chou,Perng-Fei Yuh,Jui-che Tsai,Keh-Jeng Chang,Meng-Sheng CHANG,Ku-Feng Lin,Philex Ming-Yan Fan,Chansyun David Yang,Tzu-Hsien YANG,Shao-Ting WU. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-05-02.

Electronic device and operation method of sleep mode thereof

Номер патента: US20230102085A1. Автор: Shuai ZHANG,Xuemin Zhang,Yixing MEI,Yongfeng SONG,Xiaoliang JI. Владелец: Shanghai Zhaoxin Semiconductor Co Ltd. Дата публикации: 2023-03-30.

Display device, electronic device, and method of manufacturing display device

Номер патента: US20240180002A1. Автор: Tomoyoshi Ichikawa. Владелец: Sony Semiconductor Solutions Corp. Дата публикации: 2024-05-30.

Display device and method of fabricating the same

Номер патента: US20240107862A1. Автор: Jung Wook Kim,Shinya Onoue,Hee Chang Kim,Eun Joong Mun,Ji Yun BANG,Kyoung Hee PARK. Владелец: Samsung Display Co Ltd. Дата публикации: 2024-03-28.

Flexible barrier film, method of forming same, and organic electronic device including same

Номер патента: US8405233B2. Автор: James Steven Tonge,John Blizzard,William Kenneth Weidner. Владелец: Dow Corning Corp. Дата публикации: 2013-03-26.

Flexible barrier film, method of forming same, and organic electronic device including same

Номер патента: WO2010083236A1. Автор: John Donald Blizzard,James Steven Tonge,William Kenneth Weidner. Владелец: QUADSIL, INC.. Дата публикации: 2010-07-22.

Methods of Forming Magnetic Random Access Memory Devices Including Contact Plugs Between Magnetic Tunnel Junction Structures and Substrates

Номер патента: US20070230242A1. Автор: Jun-Soo Bae,Hyun-Jo Kim,Young-ki Ha,Se-Chung Oh,Kyung-Tae Nam,Jang Lee. Владелец: Ha Young-Ki. Дата публикации: 2007-10-04.

Semiconductor memory device capable of adaptively controlling bias and method of operating the same

Номер патента: US20240096401A1. Автор: Sun Young Kim,Sang-Yun Kim,Younghun Seo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-03-21.

Display device and method of controlling the same

Номер патента: US9495006B2. Автор: Kyungjin Kim,Soungmin Im,Jiyoung HONG,MinSun KIM,Sungun Kim,Byoungju KIM. Владелец: LG ELECTRONICS INC. Дата публикации: 2016-11-15.

Manufacturing method of an organic light emitting diode display device including an etch stop layer

Номер патента: US11889730B2. Автор: Hyun Min Cho,Joon Yong Park,Gyung Min Baek,Dae Won Choi,Kyeong Su KO. Владелец: Samsung Display Co Ltd. Дата публикации: 2024-01-30.

Display apparatus and method of manufacturing the same

Номер патента: US20230371316A1. Автор: Hyun Kim,Kwangsoo Lee,Seulki Kim,Seungrae Kim,Seungha Choi,Yeeun KANG. Владелец: Samsung Display Co Ltd. Дата публикации: 2023-11-16.

Source device and method of transmitting content

Номер патента: US20200288195A1. Автор: Sung-Bo Oh. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-09-10.

Resistive memory cells including localized filamentary channels, devices including the same, and methods of making the same

Номер патента: EP3234998A1. Автор: Brian S. Doyle,Uday Shah,Robert S. Chau,Ravi Pillarisetty,Elijah V. KARPOV,Prashant Majhi,Niloy Mukherjee. Владелец: Intel Corp. Дата публикации: 2017-10-25.

Source device and method of transmitting content

Номер патента: US20170359620A1. Автор: Sung-Bo Oh. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-12-14.

Stereoscopic display device and method of calibrating same, and storage medium

Номер патента: US11943423B2. Автор: Jiyang Shao,Binhua SUN,Feng Zi,Bingxin LIU,Yuxin BI. Владелец: Beijing BOE Optoelectronics Technology Co Ltd. Дата публикации: 2024-03-26.

Interactive touch-screen display device with static charge dissipation and method of assembling the same

Номер патента: WO2024018433A1. Автор: Paul WAREING,Christopher Dawson,John Brannan,Melanie Friar. Владелец: PROMETHEAN LIMITED. Дата публикации: 2024-01-25.

Method of forming pattern of semiconductor device

Номер патента: US20080227034A1. Автор: Dae Woo Kim. Владелец: Hynix Semiconductor Inc. Дата публикации: 2008-09-18.

Method of use time management for semiconductor device and semiconductor device including use time managing circuit

Номер патента: US09711205B2. Автор: Chul-woo Park,Young-Soo Sohn,Jong-Pil Son. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-07-18.

Computing device executing program performing method of analyzing power noise in semiconductor device, semiconductor device design method, and program storage medium storing program

Номер патента: US09958495B2. Автор: Young Hoe Cheon,Chan Seok Hwang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-05-01.

Method of accessing word line in semiconductor device

Номер патента: US20050232064A1. Автор: Yin Lee. Владелец: Hynix Semiconductor Inc. Дата публикации: 2005-10-20.

Method of generating specific information on semiconductor device, method of managing specific information on semiconductor device, and manufacturing apparatus for semiconductor device

Номер патента: US20240289570A1. Автор: Hiroshi Miyoshi,Noriyuki Yabuoshi. Владелец: Mitsubishi Electric Corp. Дата публикации: 2024-08-29.

Installment method of fluid control body, and fluid control device including fluid control body

Номер патента: AU2021202638A1. Автор: Shinji YAMANOUCHI. Владелец: Cosmo Koki Co Ltd. Дата публикации: 2021-12-09.

Installment method of fluid control body, and fluid control device including fluid control body

Номер патента: US20210364116A1. Автор: Shinji YAMANOUCHI. Владелец: Cosmo Koki Co Ltd. Дата публикации: 2021-11-25.

Apparatus and method of exposing light to a semiconductor device having a curved surface

Номер патента: WO2004063813A1. Автор: Nobuo Takeda,Ikuo Nishimoto,Ichitaroh Satoh. Владелец: YAMATAKE CORPORATION. Дата публикации: 2004-07-29.

Pattern correcting method of mask for manufacturing a semiconductor device

Номер патента: US20080212869A1. Автор: Koji Hashimoto,Satoshi Usui,Kei Yoshikawa. Владелец: Toshiba Corp. Дата публикации: 2008-09-04.

Method of operating memory controller and semiconductor storage device including memory controller

Номер патента: US09804790B2. Автор: Ho-Jun SHIM,Jun-bum PARK. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-10-31.

System for and method of designing and manufacturing a semiconductor device

Номер патента: US20020045280A1. Автор: Keith Strickland,Arshad Madni,Lance Trodd,Chris Powell. Владелец: Zarlink Semiconductor Ltd. Дата публикации: 2002-04-18.

Method of providing user interface of device and device including the user interface

Номер патента: US09904444B2. Автор: Kil-Su Eo,Chi-Hyun CHO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-02-27.

Memory controller, method of operating the memory controller, and storage device including the memory controller

Номер патента: US20240231631A1. Автор: Minseok Ko,Minwook JUNG,Jaewook Kwak. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-11.

Ophthalmic devices including polydopamine layers and methods of depositing a metal layer on ophthalmic devices including a polydopamine layer

Номер патента: EP3688522A1. Автор: Christian GUTIERREZ,Scott B. Kennedy. Владелец: Verily Life Sciences LLC. Дата публикации: 2020-08-05.

Method of use time management for semiconductor device and semiconductor device including use time managing circuit

Номер патента: US20160104522A1. Автор: Chul-woo Park,Young-Soo Sohn,Jong-Pil Son. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-04-14.

Methods of testing cell arrays and semiconductor devices executing the same

Номер патента: US20180102183A1. Автор: Young Bo Shim. Владелец: SK hynix Inc. Дата публикации: 2018-04-12.

Neural network computing device including on-device quantizer, operating method of neural network computing device, and computing device including neural network computing device

Номер патента: US20210303982A1. Автор: Jin Kyu Kim,Joo Hyun Lee,Mi Young Lee,Min-hyung Cho,Ki Hyuk Park,Byung Jo Kim,Young-Deuk Jeon,Ju-Yeob Kim. Владелец: Electronics and Telecommunications Research Institute ETRI. Дата публикации: 2021-09-30.

Cartridge with dilution air passage, method of making the cartridge, and e-vaping device including the cartridge

Номер патента: US20200068956A1. Автор: San Li,Gerd Kobal,Eric Hawes,Raymond Lau,Robert ARENTS. Владелец: Altria Client Services LLC. Дата публикации: 2020-03-05.

Memory controller, method of operating the memory controller, and storage device including memory controller

Номер патента: EP3920033A1. Автор: Junghoon Kim,Seonghun Kim,Jongsung Na,Seona CHO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-12-08.

Pixel cache, method of operating pixel cache, and image processing device including pixel cache

Номер патента: US20140204108A1. Автор: Jinhong Oh,Youngin Chung. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2014-07-24.

Method of operating memory controller and semiconductor storage device including memory controller

Номер патента: US20160216899A1. Автор: Ho-Jun SHIM,Jun-bum PARK. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-07-28.

Memory controller, method of operating the memory controller, and electronic device including the memory controller

Номер патента: US11868657B2. Автор: Hyunsoo Kim,Hosang Yoon,Seungwon Lee,Seungwoo Seo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-01-09.

Memory device related to a program operation, method of operating the memory device, and storage device including the memory device

Номер патента: US20240161829A1. Автор: Chan Sik Park,Hyung Jin Choi,Gwi Han KO. Владелец: SK hynix Inc. Дата публикации: 2024-05-16.

Ophthalmic devices including polydopamine layers and methods of depositing a metal layer on ophthalmic devices including a polydopamine layer

Номер патента: WO2019067479A1. Автор: Christian GUTIERREZ,Scott B. Kennedy. Владелец: Verily Life Sciences LLC. Дата публикации: 2019-04-04.

Reticle for use in exposing semiconductor, method of producing the reticle, and semiconductor device

Номер патента: US6352800B1. Автор: Toshifumi Suganaga. Владелец: Mitsubishi Electric Corp. Дата публикации: 2002-03-05.

Method of manufacturing photo masks and semiconductor devices

Номер патента: US20230418151A1. Автор: Wen-hao Cheng,Chun Wei HSU. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-12-28.

Method of producing fluid exhaust head

Номер патента: RU2422289C1. Автор: Масатака КАТО,Казухиро ХАЯКАВА. Владелец: Кэнон Кабусики Кайся. Дата публикации: 2011-06-27.

Electronic device and controlling method of electronic device

Номер патента: US20240249671A1. Автор: Changhun KIM,Deukgeun Ahn. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-25.

Fragmentation device with increased surface hardness and a method of producing the same

Номер патента: US09738947B1. Автор: Eric Scheid,Nishkamraj U. Deshpande,James E. Schwabe. Владелец: US Department of Navy. Дата публикации: 2017-08-22.

Method of matching shell with suppository device

Номер патента: RU2611741C2. Автор: Хинрич КНУТ,Эван Джозеф ДУРЛИНГ,ДЖР Роберт Кларк АВЕРИ,Конни Ли ШУЛТЕС. Владелец: Дзе Проктер Энд Гэмбл Компани. Дата публикации: 2017-02-28.

Method of correcting design layout of semiconductor device, computing device performing the same, and method of fabricating semiconductor device using the same

Номер патента: US20240202424A1. Автор: Bok-yeon Won,Jichang SIM,Ohhun KWON,Hyuckjoon Kwon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-06-20.

Accelerator, method of operating an accelerator, and electronic device including an accelerator

Номер патента: US11741026B2. Автор: Seungwook Lee,Hyung-Dal Kwon,Jaehyeong SIM,Hanmin PARK,Jae-Eon JO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-08-29.

Accelerator, method of operating an accelerator, and electronic device including an accelerator

Номер патента: US12130756B2. Автор: Seungwook Lee,Hyung-Dal Kwon,Jaehyeong SIM,Hanmin PARK,Jae-Eon JO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-10-29.

Capacitive sensor device and method of manufacture

Номер патента: US09417048B2. Автор: Emad Andarawis Andarawis,Wayne Charles Hasz,Mahadevan Balasubramaniam,David Richard Esler. Владелец: General Electric Co. Дата публикации: 2016-08-16.

Collection method of electrodeposited paint

Номер патента: RU2489529C2. Автор: Тосиаки КАНЕКО,Есиро АРИМОРИ,Сатио АСАНАГИ. Владелец: Асахи Касеи Кемикалз Корпорейшн. Дата публикации: 2013-08-10.

Memory device and method of operating the memory device

Номер патента: US20240185921A1. Автор: Young Hwan Choi. Владелец: SK hynix Inc. Дата публикации: 2024-06-06.

Methods of operating semiconductor memory devices with selective write-back of data for error scrubbing and related devices

Номер патента: US09990163B2. Автор: Uk-Song KANG,Hoi-Ju CHUNG,Sang-Uhn CHA. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-06-05.

Method of operating memory controller and data storage device including memory controller

Номер патента: US09588714B2. Автор: Kitae Park,Sang-Wan Nam. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-03-07.

Method of repairing glass for display device

Номер патента: US20230022346A1. Автор: Jaeho Lee,Hyun-Il Cho,Mincheol Kim,Sookkyung You,Myunghun BAEK. Владелец: Samsung Display Co Ltd. Дата публикации: 2023-01-26.

Method of cleaning, support, and cleaning apparatus

Номер патента: US20240278295A1. Автор: Ker-Hsun LIAO,Yi-Chen Ho,Chih Ping Liao,Chi-Hsun Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-22.

Organic light emitting display device and method of driving the same to include a compensation strategy applied during different time periods

Номер патента: US09489888B2. Автор: Jung Hyeon Kim,Bum Sik Kim,Seung Tae Kim,Myung-Gi Lim. Владелец: LG Display Co Ltd. Дата публикации: 2016-11-08.

Operation method of host processor and accelerator, and electronic device including the same

Номер патента: US12039360B2. Автор: Sanggyu SHIN,Yeongsik Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-16.

Robust nitric oxide-releasing polymers and articles and methods of making and uses thereof

Номер патента: EP3823683A1. Автор: Hitesh Handa,Sean Hopkins. Владелец: University of Georgia. Дата публикации: 2021-05-26.

Optoelectronic device and method of manufacture thereof

Номер патента: US20220276438A1. Автор: Guomin Yu,Aaron John ZILKIE. Владелец: Rockley Photonics Ltd. Дата публикации: 2022-09-01.

Foldable transparent composite film and method of manufacturing the same

Номер патента: US20240262083A1. Автор: Ji Hoon Ko. Владелец: Solip Tech Co Ltd. Дата публикации: 2024-08-08.

Robust nitric oxide-releasing polymers and articles and methods of making and uses thereof

Номер патента: US20210268156A1. Автор: Hitesh Handa,Sean Hopkins. Владелец: University of Georgia Research Foundation Inc UGARF. Дата публикации: 2021-09-02.

Method of manufacturing insulating layer and semiconductor device including insulating layer, and semiconductor device formed thereby

Номер патента: GB2376243B. Автор: Jeon-Sig Lim,Jin-Ho Jeon,Jong-Seung Yi,Woo-chan Jung. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2003-07-09.

Method of generating compensation data of display device and apparatus for generating compensation data of display device

Номер патента: US20220084459A1. Автор: Hyung Jin Kim,Seok Ha Hong,Dong Joon KWAG. Владелец: Samsung Display Co Ltd. Дата публикации: 2022-03-17.

Method of driving display panel and display device including the display panel

Номер патента: US09721516B2. Автор: Cheol-Woo Park,Kyoung-Won Lee,Su-Hyeong Park,Ho-Yong Jung,Sang-Mi Kim. Владелец: Samsung Display Co Ltd. Дата публикации: 2017-08-01.

Method of tracking marker and electronic device thereof

Номер патента: US09424651B2. Автор: Jaroslaw Karciarz,Piotr Malesa,Slawomir Jozef Wojcik. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-08-23.

In vivo insertable electrode and method of manufacturing the same

Номер патента: US20220330871A1. Автор: Il-Joo Cho,Jungmok SEO,Yeontaek LEE,Hyogeun SHIN. Владелец: University Industry Foundation UIF of Yonsei University. Дата публикации: 2022-10-20.

Device to assist in fitting a custom wheel to an automobile & methods of use thereof

Номер патента: US20100212168A1. Автор: Joseph T. Findeis. Владелец: Individual. Дата публикации: 2010-08-26.

Semiconductor memory device and method of operating the semiconductor memory device

Номер патента: US20210327532A1. Автор: Jong Wook Kim. Владелец: SK hynix Inc. Дата публикации: 2021-10-21.

Diagnosis device and method of manufacturing the diagnosis device

Номер патента: WO2009011535A2. Автор: Byoung Su Lee,Do Young Lee. Владелец: SILICONFILE TECHNOLOGIES INC.. Дата публикации: 2009-01-22.

Control method of aero wind power generation device

Номер патента: US20230250805A1. Автор: Jung Hun Choi,Dong Hyun Ha,Jae Wung Jung. Владелец: Kia Corp. Дата публикации: 2023-08-10.

Template and method of manufacturing the same, and semiconductor device manufacturing method using the template

Номер патента: US20110237086A1. Автор: Ikuo Yoneda. Владелец: Individual. Дата публикации: 2011-09-29.

Memory device related to verifying memory cells in an erase state and method of operating the memory device

Номер патента: US20240153568A1. Автор: Chan Sik Park,Hyung Jin Choi. Владелец: SK hynix Inc. Дата публикации: 2024-05-09.

Method of screening non-volatile memory devices

Номер патента: US20030147294A1. Автор: Yasuhito Anzai. Владелец: Individual. Дата публикации: 2003-08-07.

Foldable device, lamp and method of use thereof

Номер патента: US11774077B1. Автор: Wenfeng Zhou. Владелец: Individual. Дата публикации: 2023-10-03.

Travel assist device and method of controlling travel assist device

Номер патента: US20180015919A1. Автор: Makoto Ito,Kentaro Yamada,Shinnosuke Ishida,Hiroyasu Kubota,Daisuke Hanzawa. Владелец: Honda Motor Co Ltd. Дата публикации: 2018-01-18.

Display device and method of driving the display device

Номер патента: US20200312253A1. Автор: Won Tae Kim. Владелец: Samsung Display Co Ltd. Дата публикации: 2020-10-01.

Organic light emitting display device and method of driving the same

Номер патента: US20150070407A1. Автор: Won-Jun Lee,Gi-Chang Lee,Ji-Yeon YOON. Владелец: Samsung Display Co Ltd. Дата публикации: 2015-03-12.

Electronic device and controlling method of electronic device

Номер патента: US20240312457A1. Автор: Chanwoo Kim,Abhinav Garg,Jiyeon Kim,Dhananjaya Nagaraja GOWDA. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-09-19.

Dynamic arm brace assemblies and methods of use

Номер патента: US20240307207A1. Автор: Ian Kovacevich,Sean Kaminsky,John M. Behles. Владелец: Individual. Дата публикации: 2024-09-19.

Method of controlling wakefulness, system for controlling wakefulness, information processing device, and wearable device

Номер патента: WO2024195551A1. Автор: Yoshihiro Sekine,Koji Iwasaki,Ippei Kimura. Владелец: RICOH COMPANY, LTD.. Дата публикации: 2024-09-26.

Storage device predicting failure using machine learning and method of operating the same

Номер патента: US20240345906A1. Автор: Sungtae Lee,Ho-jin Ahn,Yongwong Kwon,Dohyun CHOI. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-10-17.

Gaming system and method of gaming

Номер патента: US09576423B2. Автор: Michael A. Shai-Hee. Владелец: ARISTOCRAT TECHNOLOGIES AUSTRALIA PTY LTD. Дата публикации: 2017-02-21.

Display device and method of controlling therefor

Номер патента: US09460330B2. Автор: Doyoung Lee,Sinae Chun. Владелец: LG ELECTRONICS INC. Дата публикации: 2016-10-04.

Organic light emitting display device and method of driving the same

Номер патента: US09430966B2. Автор: Won-Jun Lee,Gi-Chang Lee,Ji-Yeon YOON. Владелец: Samsung Display Co Ltd. Дата публикации: 2016-08-30.

Fitness tracking system and method of operating the same

Номер патента: CA3174586A1. Автор: Robert Andrew Just,Antoine Neidecker. Владелец: Train Fitness Inc. Дата публикации: 2023-03-15.

Memory device and method of operating the memory device

Номер патента: US20210319838A1. Автор: Byoung In JOO. Владелец: SK hynix Inc. Дата публикации: 2021-10-14.

Method of erasing data in flash memory device

Номер патента: US7986565B2. Автор: Jae-Yong Jeong,Jin-Young Chun. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2011-07-26.

Osteoconductive devices and methods of use

Номер патента: US20220192842A1. Автор: Douglas Neary. Владелец: Individual. Дата публикации: 2022-06-23.

Method of processing exception events and storage device for processing exception events

Номер патента: EP4404043A1. Автор: Jungtae Lee,Kwangwon Park,Yejin Jo,Bi-Oh PARK,Jungyoung Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-24.

Method of processing exception events and storage device for processing exception events

Номер патента: US20240248780A1. Автор: Jungtae Lee,Yejin Jo,Bi-Oh PARK,Jungyoung Kim,Kwangwong Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-25.

Wearable device capable of having sensor for detecting biological signal attached thereto or detached therefrom and method of controlling the wearable device

Номер патента: US09993200B2. Автор: Sanghwa JEONG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-06-12.

Display device and driving method of display panel

Номер патента: US09779650B2. Автор: Pei-Lin Hsieh,Hsiang-Tan Lin. Владелец: Chunghwa Picture Tubes Ltd. Дата публикации: 2017-10-03.

Method of compensating color of transparent display device

Номер патента: US09508280B2. Автор: Young-Jun Seo,Chi-O Cho,Byung-Choon Yang. Владелец: Samsung Display Co Ltd. Дата публикации: 2016-11-29.

Method of construction for replaceable pulley lagging device

Номер патента: US5209704A. Автор: Karl C. Valster,Allen V. Reicks. Владелец: Precision Pulley Inc. Дата публикации: 1993-05-11.

Flash memory device and a method of verifying the same

Номер патента: US9196372B2. Автор: Seungwon Lee,Byeonghoon LEE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2015-11-24.

Implantable medical devices and methods of use

Номер патента: US20220362545A1. Автор: Paul A. Friedman,Samuel J. Asirvatham,Steve Maschino,Jeffrey Rynbrandt,Charles Ritrivi,Richard Scott Sanders. Владелец: Medicool Technologies Inc. Дата публикации: 2022-11-17.

Flash Memory Device and a Method of Verifying the Same

Номер патента: US20140071769A1. Автор: Seungwon Lee,Byeonghoon LEE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2014-03-13.

Sense amplifier, method of operating the same, and volatile memory device including the same

Номер патента: US20240339151A1. Автор: Dongil LEE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-10-10.

Blasting device for simultaneously registering multiple detonators based on blasting pattern information and method of using the same

Номер патента: US12117281B2. Автор: Yong Seok Kuk. Владелец: Hanwha Corp. Дата публикации: 2024-10-15.

Pharmaceutical storage and retrieval system and methods of storing and retrieving pharmaceuticals

Номер патента: US09868558B2. Автор: William K. Holmes. Владелец: RXSAFE LLC. Дата публикации: 2018-01-16.

Semiconductor device related to performance of a program operation and method of operating the semiconductor device

Номер патента: US20240161832A1. Автор: Hyung Jin Choi,Chan Hui Jeong. Владелец: SK hynix Inc. Дата публикации: 2024-05-16.

Methods of programming and sensing in a memory device

Номер патента: US10153043B2. Автор: Toru Tanzawa. Владелец: Micron Technology Inc. Дата публикации: 2018-12-11.

Semiconductor device and method of operating the same

Номер патента: US20210397362A1. Автор: Ki Woong Lee,Sang Jin Lee,Young Gyun Kim. Владелец: SK hynix Inc. Дата публикации: 2021-12-23.

Method of flue gas desulphurization and denitration and a device

Номер патента: RU2685136C1. Автор: Хэнди Е,Цзиньчао ВЭЙ,Чанци ЛЮ,Юн Ли. Владелец: Хунань Чжуне Чантянь Энерджи Консервейшн Энд Инвайронментал Протекшн Текнолоджи Ко., Лтд.. Дата публикации: 2019-04-16.

Nanopore device and methods of biosynthesis using same

Номер патента: US20230228710A1. Автор: Bita KARIMIRAD,Kyung Joon Han. Владелец: Palogen Inc. Дата публикации: 2023-07-20.

Computer-implemented method of optimizing a design in a time multiplexed programmable logic device

Номер патента: US5701441A. Автор: Stephen M. Trimberger. Владелец: Xilinx Inc. Дата публикации: 1997-12-23.

Processor, method of operating the processor, and electronic device including the same

Номер патента: EP4040341A1. Автор: Jae Wook Lee,Seung Wook Lee,Jaeyeon WON,Tae Jun Ham. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-08-10.

Method of refining chemical for manufacturing semiconductor devices and apparatus for its reuse

Номер патента: TW396055B. Автор: Sang-Mun Chon,June-ing Gil,Yong-Kyun Ko. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2000-07-01.

Sealing structure, manufacturing method of the same, and display device

Номер патента: US20200033650A1. Автор: XIN ZHAO,Zhiqiang Wang,Shuang Hu,Shicheng Sun,Jianfei TIAN,Chenkai QI,Xianlong FU. Владелец: Ordos Yuansheng Optoelectronics Co Ltd. Дата публикации: 2020-01-30.

Memory device, memory system including memory device, and method of operating memory system

Номер патента: US20210182144A1. Автор: Tae Ho Lee,Byung Ryul Kim,Yong Hwan HONG,Dae Il Choi. Владелец: SK hynix Inc. Дата публикации: 2021-06-17.

Memory device, memory system including memory device, and method of operating memory system

Номер патента: US20240004557A1. Автор: Hee Youl Lee. Владелец: SK hynix Inc. Дата публикации: 2024-01-04.

Container for a display device, method of manufacturing the same, and display device including the container

Номер патента: US20100277405A1. Автор: Jeong-tae Kim,Sang-Joon Park,Yong-Soo Jeong,Tae-Seok Kim,Il Kwon,Soon-Woo Lee,Woo-Yul Chang,Yeong-Khy Ok. Владелец: Hyundai Hysco Co Ltd. Дата публикации: 2010-11-04.

Memory controller, memory system and operating method of the memory system using a channel arbitration circuit

Номер патента: US12013797B2. Автор: Soongmann Shin,Ikkyun Park,Gyuseok Choe. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-06-18.

Method of initial alignment of the inertial navigation device

Номер патента: RU2670243C1. Автор: Цян ЖЭНЬ,Цзецзюнь ВАН,Сюэфэн ШЭНЬ,Лилун ВЭЙ,Гуйянь ЦУЙ. Владелец: Шанхай Хуацэ Навигейшн Текнолоджи Лтд.. Дата публикации: 2018-10-19.

Microneedle devices and methods of manufacture

Номер патента: US6908453B2. Автор: Patrick R. Fleming,Richard H. Ferber,Michael D. Delmore,Luther E. Erickson. Владелец: 3M Innovative Properties Co. Дата публикации: 2005-06-21.

Inertial exerciser device and method of assembly

Номер патента: WO2002040107A2. Автор: Alberto G. Domenge. Владелец: Domenge Alberto G. Дата публикации: 2002-05-23.

Method of inputting address in nonvolatile memory device and method of operating the nonvolatile memory device

Номер патента: US20090290433A1. Автор: Young Soo Park. Владелец: Hynix Semiconductor Inc. Дата публикации: 2009-11-26.

Multi-Focusing Device for Each Ultrasonic Depth Including Micro-Machined Ultrasonic Transducer Array and Method of Operating Same

Номер патента: US20240009489A1. Автор: Kyung Il Cho. Владелец: Muti Inc. Дата публикации: 2024-01-11.

Fluid collection devices and systems including an adhesive securement feature, and methods of use

Номер патента: US20240058157A1. Автор: Kathleen DAVIS. Владелец: PureWick Corp. Дата публикации: 2024-02-22.

Selective anti-hla antibody removal device and methods of production and use thereof

Номер патента: WO2012149562A2. Автор: William H. Hildebrand,Rico Buchli,Curtis McMurtrey,Steven Cate. Владелец: The Board of Regents of the University of Oklahoma. Дата публикации: 2012-11-01.

Method of molding window for display

Номер патента: US11820693B2. Автор: Sangho Park,Jungkyu Lee,Jonghyun Choi,Inbom HWANG. Владелец: Samsung Display Co Ltd. Дата публикации: 2023-11-21.

Display device and display method of the same

Номер патента: US20210012697A1. Автор: XIANG Yuan,Shuo Li,Min Wang,Rui Xu,Zhe Wang,Chao TIAN,Qingqing Ma,Yinan GAO,Guojie QIN. Владелец: Beijing BOE Optoelectronics Technology Co Ltd. Дата публикации: 2021-01-14.

Liquid crystal display device and manufacturing method of the same

Номер патента: US10534216B2. Автор: Koichi Sugitani,Hoon Kang,Euisuk Jung,YongHoon Yang,Hyein KIM. Владелец: Samsung Display Co Ltd. Дата публикации: 2020-01-14.

Display device, method of reducing power consumption of display device, and non-transitory computer readable medium therefor

Номер патента: EP3618053A1. Автор: Amir Amirkhany,Charlene Ku. Владелец: Samsung Display Co Ltd. Дата публикации: 2020-03-04.

Accelerator, method of operating an accelerator, and electronic device including an accelerator

Номер патента: US20240004809A1. Автор: Seungwook Lee,Hyung-Dal Kwon,Jaehyeong SIM,Hanmin PARK,Jae-Eon JO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-01-04.

Selective anti-hla antibody removal device and methods of production and use thereof

Номер патента: CA2872003C. Автор: William H. Hildebrand,Rico Buchli,Curtis McMurtrey,Steven Cate. Владелец: University of Oklahoma . Дата публикации: 2021-08-10.

Storage device, data storage device including the same, and operation method thereof

Номер патента: US20160202921A1. Автор: Yong-Taek Jeong. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-07-14.

Method of dispensing a fluid composition from a multi-functional dispensing device

Номер патента: EP3203889A1. Автор: Paulus Antonius Augustinus Hoefte,Cedric GOBBER,Ruben Garcia Fabrega,Olga LAHUERTA SALAS,Dominic Robert Doyle. Владелец: Procter and Gamble Co. Дата публикации: 2017-08-16.

Method of dispensing a fluid composition from a multi-functional dispensing device

Номер патента: WO2016057587A1. Автор: Paulus Antonius Augustinus Hoefte,Cedric GOBBER,Ruben Garcia Fabrega,Olga LAHUERTA SALAS,Dominic Robert Doyle. Владелец: The Procter & Gamble Company. Дата публикации: 2016-04-14.

METHOD OF USE TIME MANAGEMENT FOR SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE INCLUDING USE TIME MANAGING CIRCUIT

Номер патента: US20160104522A1. Автор: PARK Chul-woo,SOHN Young-Soo,SON Jong-Pil. Владелец: . Дата публикации: 2016-04-14.

Method of forming pattern of semiconductor device

Номер патента: KR960010726B1. Автор: 김형수,원태경,김명선,김준모. Владелец: 현대전자산업 주식회사. Дата публикации: 1996-08-07.

Pressure sensors and methods of sensing pressure

Номер патента: EP2597442A1. Автор: Ion Georgescu,Mihai Brezeanu,Octavian Buiu,Viorel Georgel Dumitru,Stefan Dan Costea. Владелец: Honeywell Romania SRL. Дата публикации: 2013-05-29.

Memory device and method of operating the memory device

Номер патента: US11908532B2. Автор: Jong Woo Kim,Young Cheol SHIN. Владелец: SK hynix Inc. Дата публикации: 2024-02-20.

ELECTRODE STRUCTURE, METHOD OF FABRICATING THE SAME, AND SEMICONDUCTOR DEVICE INCLUDING THE ELECTRODE STRUCTURE

Номер патента: US20120001267A1. Автор: . Владелец: . Дата публикации: 2012-01-05.

PACKAGE FOR SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME AND SEMICONDUCTOR DEVICE

Номер патента: US20120001310A1. Автор: Horiki Hiroshi,NISHINO MASANORI. Владелец: Panasonic Corporation. Дата публикации: 2012-01-05.

PACKAGE FOR SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME AND SEMICONDUCTOR DEVICE

Номер патента: US20120001311A1. Автор: . Владелец: Panasonic Corporation. Дата публикации: 2012-01-05.

POLYMER FOR FORMING RESIST PROTECTION FILM, COMPOSITION FOR FORMING RESIST PROTECTION FILM, AND METHOD OF FORMING PATTERNS OF SEMICONDUCTOR DEVICES USING THE COMPOSITION

Номер патента: US20120003589A1. Автор: . Владелец: . Дата публикации: 2012-01-05.

PACKAGE FOR SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME AND SEMICONDUCTOR DEVICE

Номер патента: US20120001312A1. Автор: . Владелец: Panasonic Corporation. Дата публикации: 2012-01-05.

THREE DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

Номер патента: US20120001345A1. Автор: Hwang Kihyun,YANG Junkyu,Choi Hanmei,Park ChanJin,Min Gyungjin,Yoo Dongchul,Kong Yoochul. Владелец: . Дата публикации: 2012-01-05.

DRIVING METHOD OF LIQUID CRYSTAL DISPLAY DEVICE

Номер патента: US20120001881A1. Автор: . Владелец: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.. Дата публикации: 2012-01-05.

SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

Номер патента: US20120003808A1. Автор: Lee Sang-yun. Владелец: BESANG INC.. Дата публикации: 2012-01-05.

Method of producing display device, display device, method of producing thin-film transistor substrate, and thin-film transistor substrate

Номер патента: US20120001183A1. Автор: . Владелец: SONY CORPORATION. Дата публикации: 2012-01-05.

METHOD OF ARRANGING PADS IN SEMICONDUCTOR DEVICE, SEMICONDUCTOR MEMORY DEVICE USING THE METHOD, AND PROCESSING SYSTEM HAVING MOUNTED THEREIN THE SEMICONDUCTOR MEMORY DEVICE

Номер патента: US20120002456A1. Автор: OH Chi-sung. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2012-01-05.

Method of making interconnections for semiconductor device

Номер патента: RU2421847C1. Автор: Сергей Александрович Гаврилов,Сергей Владимирович Дубков,Дмитрий Геннадьевич Громов,Андрей Евгеньевич Миронов,Алексей Сергеевич Шулятьев. Владелец: Государственное образовательное учреждение высшего профессионального образования Московский государственный институт электронной техники (технический университет) (МИЭТ). Дата публикации: 2011-06-20.

Method of forming electrode on semiconductor device

Номер патента: TW200939316A. Автор: zhi-hong Wu,Ying-Ru Chen,Zhi-Gang Zhao,Zhi-Zhou Gao,zi-xian Lu,geng-sheng Liu. Владелец: Atomic Energy Council. Дата публикации: 2009-09-16.

Method of and system for getting semiconductor devices of improved properties and preliminary selection of avalanche devices

Номер патента: PL131247B1. Автор: Henryk Rzepa,Jerzy Kuchta. Владелец: Politechnika Gdanska. Дата публикации: 1984-10-31.

METHOD OF FORMING IMAGE OF SEMICONDUCTOR DEVICE, AND METHOD OF DETECTING A DEFECT OF THE SEMICONDUCTOR DEVICE BY USING THE IMAGE FORMING METHOD

Номер патента: US20120082367A1. Автор: . Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2012-04-05.

Improvements in or relating to methods of and devices for manufacturing semiconductor devices

Номер патента: AU4298064A. Автор: Bernardus Maria Spaapen Joseph. Владелец: Philips Gloeilampenfabrieken NV. Дата публикации: 1965-10-14.

Liquid resin composition, semiconductor chip with an adhesive layer, method of producing such materials, and semiconductor devices

Номер патента: SG182978A1. Автор: Masuda Takeshi,Kagimoto Tomohiro,Shuey Seng LOW,Ohkubo Hikaru. Владелец: Sumitomo Bakelite Co. Дата публикации: 2012-08-30.

Method of manufacture of micro-alloy semiconductor devices employing a cadmium impurity metal jet-plating solution

Номер патента: AU251530B2. Автор: Luther Schradle and John George Janes George. Владелец: Philco Ford Corp. Дата публикации: 1963-04-26.

Jet plating method of manufacture of micro-alloy semiconductor devices and plating-solutions

Номер патента: AU250167B2. Автор: Junior Manns Thomas. Владелец: Philco Ford Corp. Дата публикации: 1963-05-02.

Method of manufacture of micro-alloy semiconductor devices employing a cadmium impurity metal jet-plating solution

Номер патента: AU355961A. Автор: Luther Schradle and John George Janes George. Владелец: Philco Ford Corp. Дата публикации: 1963-04-26.

Jet plating method of manufacture of micro-alloy semiconductor devices

Номер патента: CA661914A. Автор: L. Schnable George,G. Javes John. Владелец: Philco Ford Corp. Дата публикации: 1963-04-23.

Jet plating method of manufacture of micro-alloy semiconductor devices and plating-solutions

Номер патента: AU516561A. Автор: Junior Manns Thomas. Владелец: Philco Ford Corp. Дата публикации: 1963-05-02.

Jet plating method of manufacture of micro-alloy semiconductor devices

Номер патента: CA731334A. Автор: J. Manns Thomas. Владелец: Philco Ford Corp. Дата публикации: 1966-03-29.

Method of reclaiming noble metals from semiconductor devices

Номер патента: PL246816A1. Автор: Urszula Wnuk,Zdzislaw Albinowski,Zbigniew Lukawski,Alina Sabisz,Wieslaw Boule. Владелец: Naukowo Prod Ct Polprzewodniko. Дата публикации: 1985-09-24.

Manufacturing method of lateral diffusion metal oxide semiconductor device

Номер патента: TW201114032A. Автор: Bo-Jui Huang. Владелец: United Microelectronics Corp. Дата публикации: 2011-04-16.

Method of making a dielectrically isolated semiconductor device

Номер патента: CA1033469A. Автор: Wilhelmus H.C.G. Verkuijlen. Владелец: Philips Gloeilampenfabrieken NV. Дата публикации: 1978-06-20.

Improvements in or relating to methods of manufacturing glass envelopes for semiconductor devices

Номер патента: AU210578B2. Автор: Cornelis Nichois and Wilhelmus Antonius Convers Herman. Владелец: . Дата публикации: 1956-01-12.

Methods of manufacturing sealed housings for semiconductor devices

Номер патента: AU251798B2. Автор: Moore Barton and David John Hunter Donald. Владелец: McKenzie and Holland Australia Pty Ltd. Дата публикации: 1963-05-02.

Methods of manufacturing sealed housings for semiconductor devices

Номер патента: AU878361A. Автор: Moore Barton and David John Hunter Donald. Владелец: McKenzie and Holland Australia Pty Ltd. Дата публикации: 1963-05-02.

Method of manufacturing gate electrode in semiconductor device

Номер патента: TW379373B. Автор: Jia-Shuen Shiau. Владелец: Maodeh Technologies Co Ltd. Дата публикации: 2000-01-11.

Improvements in or relating to methods of manufacturing glass envelopes for semiconductor devices

Номер патента: AU1052355A. Автор: Cornelis Nichois and Wilhelmus Antonius Convers Herman. Владелец: . Дата публикации: 1956-01-12.

Method of manufacturing SOI substrate and semiconductor device

Номер патента: TW492048B. Автор: Nobuyoshi Hattori. Владелец: Yamakawa Satosh. Дата публикации: 2002-06-21.

METHODS OF FORMING 3-D SEMICONDUCTOR DEVICES USING A REPLACEMENT GATE TECHNIQUE AND A NOVEL 3-D DEVICE

Номер патента: US20140084383A1. Автор: Xie Ruilong,Cai Xiuyu. Владелец: GLOBALFOUNDRIES INC.. Дата публикации: 2014-03-27.

Method of Forming Patterns of Semiconductor Device

Номер патента: US20120086134A1. Автор: KIM Tae Kyung. Владелец: HYNIX SEMICONDUCTOR INC.. Дата публикации: 2012-04-12.

METHOD OF FORMING PATTERNS OF SEMICONDUCTOR DEVICE

Номер патента: US20120156866A1. Автор: AHN Myung Kyu. Владелец: . Дата публикации: 2012-06-21.

METHOD OF FORMING PATTERNS OF SEMICONDUCTOR DEVICE

Номер патента: US20120156883A1. Автор: CHOI Jae Wook. Владелец: HYNIX SEMICONDUCTOR INC.. Дата публикации: 2012-06-21.

TRANSISTOR, SEMICONDUCTOR DEVICE INCLUDING THE TRANSISTOR, AND MANUFACTURING METHOD OF THE TRANSISTOR AND THE SEMICONDUCTOR DEVICE

Номер патента: US20120319108A1. Автор: . Владелец: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.. Дата публикации: 2012-12-20.

Methods of Forming Highly Scaled Semiconductor Devices Using a Reduced Number of Spacers

Номер патента: US20130065367A1. Автор: Flachowsky Stefan,Scheiper Thilo,Mikalo Ricardo P.. Владелец: GLOBALFOUNDRIES INC.. Дата публикации: 2013-03-14.

METHOD OF FORMING PATTERNS OF SEMICONDUCTOR DEVICE

Номер патента: US20130089986A1. Автор: LEE Dong-jun,KIM Min-Jung,Kim Kyoung-mi,Park Jeong-ju,KIM Boo-deuk. Владелец: . Дата публикации: 2013-04-11.

Method of forming wiring in semiconductor device using oxidation of polysilicon

Номер патента: KR100257081B1. Автор: 도익수,구자붕. Владелец: 현대반도체주식회사. Дата публикации: 2000-05-15.

Method of forming isolation of semiconductor device

Номер патента: KR980006102A. Автор: 신영기. Владелец: 현대전자산업 주식회사. Дата публикации: 1998-03-30.

Method of forming junction of semiconductor device

Номер патента: JPS5596676A. Автор: Kimihiro Muraoka,Sozaburo Hotta. Владелец: Toyo Electric Manufacturing Ltd. Дата публикации: 1980-07-23.

Method of forming micropattern of semiconductor devices

Номер патента: KR960006564B1. Автор: 박해성. Владелец: 김주용. Дата публикации: 1996-05-17.

Бесплатный поиск патентной информации. Построение патентных ландшафтов и отчетов.

Главная
Проекты и услуги
Контакты

© 2021-2022 - All Rights Reserved - разработано Ecoruspace.me.