Work function adjustment in high-k gate stacks including gate dielectrics of different thickness .

Work function adjustment in high-k gate stacks including gate dielectrics of different thickness

Номер патента: US20110049642A1
Опубликовано: 03-03-2011
Автор(ы): Andy Wei, Martin Trentzsch, Thilo Scheiper
Принадлежит: Globalfoundries Inc
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Рисунок 1. Взаимосвязь патентов (ближайшие 20).

Work function adjustment in high-k gates stacks including gate dielectrics of different thickness

Номер патента: SG178409A1. Автор: Thilo Scheiper,Andy Wei,Martin Trentzsch. Владелец: Globalfoundries Inc. Дата публикации: 2012-04-27.

Adjustment of work function in high-k gate stacks containing gate dielectrics of different thickness

Номер патента: DE102009039418B4. Автор: Thilo Scheiper,Andy Wei,Martin Trentzsch. Владелец: GlobalFoundries Dresden Module One LLC and Co KG. Дата публикации: 2013-08-22.

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Work function adjustment in high-k gate stacks for devices of different threshold voltage

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