Method and system for extending die size and packaged semiconductor devices incorporating the die

Technical Field

Aspects of the present invention generally relates to semiconductor device of the package.

Background Art

Before use of the semiconductor device within the package usually melts (or part of the package into the package). Some package containing a single die, and the other includes a plurality of die. Packaging often provides some of the protection of the die (such as prevent corrosion, impact and other injury), and also often include electrical leads or electric contact member of the die are connected with the motherboard of the other assembly. Packaging may also include configured to dissipate heat from the die or the package to the motherboard in the assembly of the outside.

Content of the invention

Packaged semiconductor device may be included to realize the way of the: die mark (flag) and a plurality of lead frame finger, each lead frame means spaced apart from the proximal end and the die mark; spacer (spacer) of the spacer is the mechanical coupling of the surface of the 1st and electrically coupled to the die mark the surface of the 1st; die, the die of the surface of 1st and electrically coupled to the mechanical coupling of the spacing part surface 2nd; 2nd on the surface of the die to the at least one electric contact member and at least one lead frame finger coupling the at least one electrical connector; and die envelopment, spacer, at least one of at least a portion of the electrical connector, the die and at least a portion of each lead frame to at least a portion of the molding compound; wherein the spacer along the surface of the spacing part is greater than the width of die 2nd along the die mark mark the width of the surface of the 1st.

Packaged semiconductor device includes the following realization way can be one, all or any number of:

Die mark the surface of the 1st and 2nd surface opposite of the marking on one side of the die, the surface of the spacing part of the 1st and 2nd relative to the surface of the spacing part on one side of the spacer, and can be on the surface of the die in the 1st 2nd surface opposite of the die on one side of the die.

Each lead frame means of the die-marks can be separated by gap width, and the spacing part can be across each gap width and in each of the lead wire extends above the frame means.

Each lead frame means can be the proximal end under the spacer.

Die labeled 1st surface and each lead frame of the 1st surface may be substantially coplanar.

Die labeled 1st surface and each lead frame of the 1st surface may be substantially coplanar under the spacer.

The spacer can have at least one is configured to receive the groove of the insulating material.

Insulating material may be coupled to the spacer and at least one lead frame to at least one groove between the.

In the packaged semiconductor device die size extending in the realization mode of the method can include: the 1st surface of the spacing part is a spacer mechanical coupling and electrically coupled to the die mark the surface of the 1st, die flag is surrounded by a plurality of lead frame means, wherein each of the lead frame means spaced apart from the proximal end and the die mark; at the die of the die to the surface of the 1st and electrically coupled to the mechanical coupling of the spacing part surface 2nd; and using a molding compound and respectively one of the encapsulation compound to the die, the distance piece, die marks and at least a portion of each lead frame to at least a portion of the secondary molding (overmold) in and envelopment to a; wherein the spacer along the surface of the spacing part is greater than the width of die 2nd along the die mark mark the width of the surface of the 1st.

In the packaged semiconductor device die size extending in the realization mode of the method can include the following one, all or any number of:

Each lead frame means of the die-marks can be separated by gap width, and the spacing part can be across each gap width and in each of the lead wire extends above the frame means.

Each lead frame means can be the proximal end under the spacer.

Die labeled 1st surface and each lead frame of the 1st surface may be substantially coplanar.

Die can be electrically coupled using a conductive adhesive and mechanically coupled to the spacer.

Insulating material may be coupled to the spacer and at least one lead wire between the frame means.

The insulating material coupled to the spacer and at least one lead frame means the insulating material may be included between the spacing part coupled to the 1st in the surface of the groove.

1st of the die surface of the die along the width of the die can be larger than the die mark of the surface of the 1st along the width of the mark.

Each lead frame means and spaced from the clearance width mark in order to die, the die can be across each gap width and in each of the lead wire extends above the frame means.

Each lead frame means can be the near end of under of the die.

Form a has an extended die size of the semiconductor device of the package could include the realization of the method of: contact adhesive of bonding of the adhesive tape for die mark; adhesive contact a plurality of lead frame finger; 1st the surface of the spacing part the conductive spacer mechanical coupling and electrically coupled to the die mark the surface of the 1st; at the die of the die to the surface of the 1st and electrically coupled to the mechanical coupling of the spacing part surface of the 2nd, 1st of the die wherein the die along the surface of die larger than the width of the mark along the die marked 1st the width of the surface; the use of at least one 2nd electric connector on the surface of the die to the at least one electric contact member and at least one lead frame beacon coupling; respectively encapsulated using a molding compound and a compound to the die, at least one connector to at least a portion of the, spacer, die marks and at least a portion of each lead frame to at least a portion of the molding and for the second time a of the envelope, in order to form the packaged semiconductor device; from the adhesive and removing the packaged semiconductor device.

Form a has an extended die size of the semiconductor device package of the mode of implementation of the method can include the following one, all or any:

The method can include singulation-encapsulated semiconductor device.

Through the specification and drawings and claim, the above-mentioned content and other aspects, features and advantages to the general technical personnel in the field will be obvious.

Description of drawings

After this the right in conjunction with a description of the realization mode, wherein the similar to that of similar marks on the attached element, and:

Figure 1 is the perspective view of the front-the bottom surface of the die using extending the size of the package formed by the method and system of the semiconductor device;

Figure 2 is the front-top perspective view of Figure 1 the encapsulated semiconductor device;

Figure 3 is the sectional view of the line 1-1 of fig. 2 of the semiconductor device package of the spacer;

Figure 4 is the sectional view of the line 1-1 of fig. 2 of the semiconductor device package of the spacer and insulating material;

Figure 5 is the sectional view of adhesive tape and the line 1-1 of fig. 2 of the semiconductor device package of a plurality of elements;

Figure 6 is the sectional view of adhesive tape and the line 1-1 of fig. 2 of the semiconductor device package of a plurality of elements;

Figure 7 is the sectional view of adhesive tape and the line 1-1 of fig. 2 of the semiconductor device package of a plurality of elements;

Figure 8 is the sectional view of adhesive tape and the line 1-1 of fig. 2 of the semiconductor device of the package;

Figure 9 is the sectional view of the line 1-1 of fig. 2 of the semiconductor device of the package;

Figure 10 is the section exploded view of the line 1-1 of fig. 2 of the semiconductor device package of a plurality of elements;

Mode of execution

The present invention, and realizing the way its aspects is not limited to the specific components disclosed herein, elements of the assembly program or method. The known in the field of die with the desired method for the extension of the method and system and the size of the incorporated into the package semiconductor device many of the additional assembly line, assembly procedures and/or method for the elements of the present disclosure the purposes of specific implementations will become obvious. Therefore, for example, although the specific implementations disclosed, such realization mode and realize assembly can include the known in the field of die used for the method for the extension of the method and system and the size of the incorporated into the die of the semiconductor device of the package of any shape, size, style, type, model, version, measurement, concentration, material, quantity, method elements, steps and/or the like, and the assembly and method, and method for the operation of the desired consistency.

Definition: used herein: "width" refers to when the encapsulated semiconductor device is located in the position of the lower part of the lead frame element, packaged semiconductor device (or element thereof) a horizontal sectional view of the measuring value ( such as chart 10 shown in the horizontal width of the 38 and 22); the "thickness" means the same as the vertical viewing angle is derived from the measured value, and; "length" in the page is referred to (and/or from the page) of the measured value.

Now with reference to Figure 1, Figure 2 and Figure 9, packaged semiconductor device (package) 2 is to realize the way with extended illustration for the die size, and include at least a portion incorporated into the molding compound or encapsulation compound (compound) 58 and/or using a molding compound or encapsulation compound 58 covering the several elements, a plurality of lead frame finger 6 from the molding compound 58 exposed, and die mark 18 of the surface of the 2nd 24 also from the molding compound 58 exposed. Figure 1, Figure 2 and Figure 9 of the package 2 is a rectangular plane non-lead (QFN) packaging-in other implementations, other types of package can include extending the size of the die can be used and/or the extension of the method for forming die size, as an unlimited example, such as: double-plane non-lead (DFN) package configuration, micro lead frame configuration (MLP), small outline no-lead (SON) configuration, small outline integrated circuit (SOIC) configuration, small outline package (SOP) configuration, include outwardly extends beyond the molding compound 58 of one or a plurality of surface configuration, such as wing-shaped lead (and as shown in the Figure the version on the contrary, in the Figure leads are with the molding compound 58 of the surface to be flush or substantially flush); rectangular flat package (QFP); and the other comprising the lead frame with lead wire or no lead package type.

Figure 1 is the top-front perspective view of packaging 2, the bottom surface of front perspective view, and Figure 2 is the fig. 1 package 2. Each lead frame finger 6 the distal end 16 shown as exposed in the package 2 on the side surface, and each lead frame finger 6 of the part is also shown as exposed in the package 2 on the bottom surface. Figure 9 is the sectional view of the line 1-1 of fig. 2 of the package 2. Figure 3-8 each instantiating the die size of the extending part of the method and system, and Figure 10 is the section exploded view of the line 1-1 of Figure 9 the package 2 of several of the component.

Now with reference to Figure 3-5, the extension die size in the mode of implementation of the method, the incorporated into the die and the package of the semiconductor device, the lead frame 4 is bonded to the adhesive tape 62 of the adhesive. As an unlimited example, adhesive tape 62 may be or may include: Hitachi of Tokyo, Japan, into industrial Company limited sales RTSERIES to gravity of the mapping molding supporting an adhesive tape; Osaka, Japan nittoh electrical companies to sales of gravity heat-resisting tape PW/TRM series; and the like. In the realization mode, adhesive tape 62 may be or may include an ultraviolet (UV) release adhesive with low force of the thick rubber belt, so that when the adhesive tape 62 of the adhesive is exposed to the UV light, the lead frame 4 can be from the adhesive tape 62 to remove. Adhesive tape 62 can be in the package 2 to provide and during the formation of the lead frame 4, and in the use of molding compound or encapsulation compound 58 is removed after completion of molding or encapsulated. In the plurality of package 2 can be formed in the same adhesive tape 62 of the strip or in the case of-on-a-chip, single package 2 can be from the adhesive tape 62 removed before or after singulation by sawing or otherwise. May also be included that are not shown in the drawing other processing steps, for example, such as, as an unlimited example, before or after the singulation from the adhesive tape and 62 before or after removed, the package 2 the top plane or the upper plane of the bracket, each of the package 2 can be laser marking.

Lead frame 4 includes a die mark 18 and a plurality of lead frame finger 6. The plurality of die mark 18 included in the single lead frame 4 in the realization mode, with each die mark 18 associated to a plurality of lead frame 6. In various implementations the die mark 18 when looking from top has a rectangular and all four sides by a plurality of lead frame finger 6 surround. Each lead frame finger 6 and the die mark 18 in gap width of which is 60 spaced. Now with reference to Figure 10, die mark 18 including 1st surface 20, the surface of the 2nd 24, along the surface of the 1st 20 of the width 22, and a plurality of side surface 26. In fig. 10 the two shown in the side surface 26, although a three-dimensional map will be displayed for die mark 18 actual has four side surface 26. One or a plurality of side surface 26 can include a recess (groove) 28, their use as a molded or encapsulated after marking the die 18 and/or the package 2 secured to the other components of compound 58 (moldlock) compression molding lock in. In fig. 10 shown in the two recesses 28, can be used as the same compression molding lock, in the realization mode, die mark 18 of one, two, three or four side surface 26 can include a recess 28 in order to form the compression molding lock. In other implementations, may lack compression molding lock, and in any side surface 26 may not exist in the recess 28.

Now with reference to Figure 1, Figure 2, Figure 5 and Figure 10, each lead frame finger 6 has a 1st surface 8 and one or a plurality of side surface 10. Each lead frame finger 6 a proximal end 14 and the die mark 18 in gap width of which is 60 spaced apart, and each lead frame finger 6 the distal end 16 is configured to from or encapsulated in molding compound after 58 of the die exposed so as to provide 50 of the die-electric assembly 50 other electricity module and/or die 50 external of the electrical communication between the components. In the illustrated implementation, each lead frame finger 6 of the bottom surface is also configured for the purpose of after molding from the compound to similar 58 exposed, although in other implementations, according to is configured to receive and electrically coupling and mechanically coupled to the encapsulated printed circuit board (PCB) (motherboard) the design of the element or position, can form the only exposed distal end 40, or only the bottom surface of the exposed distal end 40 of the side surface of the package.

Now with reference to Figure 10, each lead frame finger 6 having a proximal end 14 of the side surface 10, wherein the presenting concave 12 in order to be used as compression molding lock, after the molding or encapsulating the lead frame finger 6 and/or other component secured to the compound 58 inner. In Figure 10, , in each lead frame finger 6 is shown on a sunken 12, although the mode of realization, a three-dimensional map may be displayed on each lead frame finger 6 (such as each lead frame means on different side surface) of the one, two, three, four depressions 12, for each lead frame finger 6 provides compression molding lock. In other implementations, can lack of compression molding lock, and in any side surface 10 or the lead frame finger 6 can be other surface does not exist in the recess 12.

Recess 12 the side surface of the above 10 parts (not including sunken 12) is a flange (flange), and the recess 28 the side surface of the above 26 part of the (not including sunken 28) is also flange. Therefore, in spite of the depression 12,28 described as providing the lead frame finger 6, die mark 18 and/or the overall package 2 of the capacity of the compression molding lock, that can be the same, is the ability to provide the flange. Similarly, as noted above the said, recess 12,28 can be included in each of the corresponding assembly of one, two, three or four sides of the, does not include all or, similarly, a flange can be respectively is included in the die mark 18 and/or lead frame finger 6 of one, two, three or four sides of the, or all does not include.

In the illustrated implementation, lead frame finger 6 and die mark 18 incorporated into a single lead frame 4 in. In other implementations, can be in each package 2 used during the formation of the two or more lead frame to provide die mark 18 and lead frame finger 6.

As shown in Figure 10 is shown in, in the realization mode, die mark 18 of the surface of the 1st 20 and each lead frame finger 6 of the surface of the 1st 8 is located in the same plane, or in other words, is coplanar. With reference to Figure 9, in the package 2 and during manufacture of the manufacturing is completed, the surface of the 1st 20 and 1st surface 8 in the same plane, or coplanar, to the spacer 30 and the die 50 below. In various implementations, the surface of the 1st 20 and each lead frame finger 6 of the surface of the 1st 8 may be substantially coplanar, although not precisely coplanar.

In the illustrated implementation, die mark 18 of the surface of the 1st 20 with the die mark 18 of the surface of the 2nd 24 relative the die mark 18 on one side of the -1st surface 20 that the upper surface or top surface of the 2nd surface and 24 is bottom surface or the lower surface-and each lead frame finger 6 of the surface of the 1st 8 in to the lead frame 6 on opposite sides of the bottom surface or the lower surface opposite the upper surface or top surface. Therefore, the size of the die in the method and system, and in the incorporated into the die in the package, the lead frame 4 is bonded to the adhesive tape 62 adhesive or bonding surface including: the mark the die 18 the 2nd surface 24 and each of the lead frame finger 6 bonded to the bottom surface of the adhesive tape 62 of the adhesive. Comprises a die mark 18 and lead frame finger 6 of the lead frame 4 can is formed of a metal, with (or without) the desired metal coating and/or can be by the conventional use of the found or in the future for creating a material of the lead frame.

With reference to Figure 3 to the Figure 5 and Figure 10, in the various implementations, providing a spacer 30, which comprises a bottom surface or the lower surface of the surface of the 1st 32, is located on the surface of the 1st 32 on the side of the opposite spacing member 30 on the upper surface of one side of the upper or top surface of the 2nd surface of the spacer 36 and 30 at the distal end 40. Spacers 30 have along the surface of the 2nd 36 width of 38. Groove 34 included in the 1st surface 32 in, if spacer 3 is coupled to the die mark 18, (as shown in Figure 5 in the shown) is used for a spacer 30 to the lead frame 6 separation, so that the spacer 30 is not connected with any lead frame finger 6 in electrical communication. If on the in to realize the way of illustration, the insulating material 42 also can be placed in the groove 34 in order to further ensure that the spacer 30 and the lead frame finger 6 does not exist between the electric connection/electric coupling/arc, although in other implementations, may be omitted completely in insulating material 42 and the groove 34 can be sufficient to ensure the spacing member 30 and the lead frame finger 6 does not exist between the electrical communication. In including insulation material 42 in the realization mode of, as an unlimited example, insulating material 42 can be or can include any conventional coating (WBC) is used as the back side of the wafer and/or that of the material of the, Dusseldorf, Germany, Henkel two of the shares limited (thereafter referred to as "Henkel") of the following trademarks from the following non-conductive die attach adhesive one or more of: ABLESTIKABLECOAT8006NS or LOCTITEABLESTIKABLECOAT8006NS (WBC); ABLEBOND2025DSI; ABLEBOND8900NC ; HYSOLQM1547; HYSOLQM1536HT ; HYSOLQM1536NB; ABLECOAT8008NC (WBC), and/or ABLESTIKABP-8910T. Insulating material 42 may have any nature, and can use the technology disclosed in appendix A applied, the appendix A according to this totally incorporated herein by reference.

Although the sectional view in the distance piece 30 shown as it looks with two groove 34, shown in a three-dimensional map of the spacer 30 when viewed from the bottom surface having a rectangular, substantially rectangular, square, the shape of the substantially square, the trench 34 is therefore along the spacer 30 of the rectangular or square in the four sides of each side and so as to form a rectangular or square shape with a continuous groove. Spacer 30 made of conductive material (such as a metal or metal alloy) forming, and the die 50 and the die mark 18 electric coupling. As illustrated in the Figure, the package 2 of the inner die 50 by or only by a spacer 30 is electrically coupled to the die mark 18.

The spacer 30 of the surface of the 1st 32 mechanical coupling and electrically coupled to the die mark 18 of the surface of the 1st 20. In the illustrated implementation, this conductive adhesive 44 to complete. In other implementations, other mechanism may be used, such as welding with paste. In using the conductive adhesive 44 in the realization mode of, as an unlimited example, conductive adhesive 44 can be or can include Henkel the following trademark name sales of one or more binders: ABLEBONDFS849-TI ; ABLECOAT8008HT (WBC); ABLETHERM2600AT, ABLEBOND84-1LMISR4; ABLEBOND84-1LMISR8; ABLEBOND3230 ; ABLESTIK8008MD (WBC); ABLEBOND8200C; ABLEBOND8200TI ; ABLEBOND8290; ABLEBOND8352L ; HYSOLQMI519; HYSOLQMI529HT-LV, and/or ; HYSOLQMI529HT. The use of solder paste or solder in the realization mode of, as an unlimited example, solder can be or can include Henkel the following trademark name the following solder sales of one or more: MULTICOREDA100, and/or ; MULTICOREDA101.

Now with reference to Figure 3-5, insulating material 42 can make its bottom plane and the 1st plane 32 flush, or substantially flush with. Conductive adhesive 44 can be in accordance with a way to the spacer 30 and die mark 18 between drying, curing or solidification, to provide these elements in the manner of the insulating material of a thickness of between 42 does not physically contact lead frame finger 6, as shown in Figure 5 in the instantiated. In other implementations, the conductive adhesive 44 can provide die mark 18 and spacer 30 between the thickness of the may neglect, the bearing spacer 30 is coupled to the die mark 18, the, insulating material 42 to physically contact lead frame 6.

In Figure 5, in the realization mode can be seen, spacer 30 to the lead frame 6 on or above, and accordingly, the lead frame finger 6 to the spacer 30 below. Here the use of the "upper" or "above" are respectively defined as a directly above or directly on the ground, while not necessarily touch the. Here the use of the "lower" or "below" are respectively defined as under direct underground or directly, while not necessarily touch the. For example, in order to the disclosed purpose, although lying in than the lead frame finger 6 of the surface of the 1st 8 high local, conductive adhesive 44 not to the lead frame 6 "upper" or "above". Similarly, lead frame finger 6 of the proximal end 14 of the insulating material 42 "lower" or "under", to the spacer 30 "lower" or "under", in the groove 34 "lower" or "under", the conductive adhesive 46 "lower" or "under" and the die 50 "lower" or "under", but not in the conductive adhesive 44 "lower" or "below".

With reference to Figure 5 and Figure 10, in the illustrated implementation of the spacer 30 has along its 2nd surface 36 width of 38, the width 38 is greater than the die mark 18 along the die mark 18 of the surface of the 1st 20 width of 22. One can also see, in the illustrated implementation, width 38 is greater than the width 22 with two gap width of which is 60 and, and therefore the spacer 30 extends beyond the gap width of which is 60 and to the lead frame 6 on or above. In other implementations, width 38 can be greater than a width dimension 22 wide but not greater than a width dimension 22 with two gap width of which is 60 wide, and in this implementation, the spacer 30 may extend in each gap width of which is 60, however, on a part of the width of the whole does not cross the gap 60, and thus not to the lead frame 6 on or above. In a particular realization mode the width of the in 38 than normally would be from to a lead frame 6 the distal end 16 to the opposite lead frame finger 6 the distal end 16 a of the small width of the measured quantity, so that the 1st surface 8 exposed in order to hold some parts of the electrical connector 48 (with reference to Figure 7) to the die 50 electric component and the lead frame finger 6 electric coupling. However, in other implementations, width 38 can be from the lead frame finger 6 the distal end 16 or the same as width of the measured greater than the same, depend on the packaging type.

Now with reference to Figure 5, Figure 6 and Figure 10, die 50 of the surface of the 1st 52 electrically coupled or mechanically coupled to the spacer 30 of the surface of the 2nd 36. In the realization mode, this through the conductive adhesive 46 complete, although in other implementations, this can be accomplished through other mechanisms, such as through welding with paste. Conductive adhesive 46 can be or can include with the conductive adhesive 44 the same or similar material. Conductive adhesive 46 can be or can include any known or discovered in the future the die attached adhesive, including any conductive epoxy resin or elastomer, including those disclosed in the documents of any adhesive. In the illustrated implementation, develop die 50 dimensioned such that in its side extending to each side of the spacer 30 of the distal end 40 as far. In other words, die 50 along the die 50 2nd surface of 56 the width of 54 in the Figure the spacer 30 width of 38 is equal. In other implementations, the width 54 can be greater than a width dimension 38 bigger or smaller.

Such as in Figure 5, Figure 6 and Figure 10 the see, in the illustrated implementation, die 50 along the 2nd surface 56 width of 54 than die mark 18 along the die mark 18 of the surface of the 1st 20 width of 22 large. Also as can be seen, in the illustrated implementation, width 54 than the width 22 with two gap width of which is 60 and large, and hence die 50 extend across the gap width of which is 60 and to the lead frame 6 on or above. In other implementations, the width 54 can be greater than a width dimension 22 wide, but not greater than a width dimension 22 with two gap width of which is 60 wide, and in this implementation, the die 50 can extend in each gap width of which is 60 on a part of, but not beyond it, and therefore, not to the lead frame 6 on or above. In a particular realization mode, width 54 than normally would be from to a lead frame 6 the distal end 16 to the opposite lead frame finger 6 the distal end 16 a of the small width of the measured quantity, so that the 1st surface 8 a part of the exposed in order to hold the electrical connector 48 (with reference to Figure 7) to the die 50 electric component and the lead frame finger 6 electric coupling. However, in the particular package to realize the way, the width can be the same, or greater.

Now with reference to Figure 7, once the die 50 has been secured to the distance piece 30, electrical connector 48 is used for the die 50 2nd surface of 56 to the electric contact member on to the lead frame 6 coupling. In the illustrated implementation, electrical connector 48 is a wire bonding, although in other implementations, they can be conducting clip or some other electrical connector. As an unlimited example, die 50 2nd surface of 56 the electrical contact piece can be a salient point (bump), the bond pad (bondpad), and so on.

Now with reference to Figure 8, once all the necessary electrical connector 48 in place, package 2 can be through the use of a molding compound or encapsulation compound 58 to the various components or encapsulated to complete molding. In Figure 8 can be seen, the molding compound or encapsulation compound 58 covering or encapsulating the die 50, spacer 30, insulating material 42 (if they exist), the conductive adhesive 44,46 and lead frame finger 6 and die mark 18 at least a portion of the. Molding compound or encapsulation compound 58 fill the die mark 18 and lead frame finger 6 in the interval or space between, the sunken below such as fill the flange 12,28 in, so that when the molding or encapsulation material drying or otherwise cured or solidified time, package 2 includes molded lock in order to help to keep the package 2 of the various components.

Molding compound or encapsulation compound 58 may be or may include Sumitomo Tokyo, Japan, phenolic plastics Corporation (after this known as the "Sumitomo") to identikits G760SERIES sales epoxy resin. Molding compound or encapsulation compound 58 may be or include the following trade-mark name Henkel sales of one or more epoxy resin: HYSOLGR828D ; HYSOLGR869; HYSOLKL-G730 ; HYSOLKL-7000HA; HYSOLKL-G900HC ; HYSOLKL-G900HP; HYSOLGR725LV-LS ; HYSOLKL-G450H; HYSOLKL-4500-1NT, and/or; HYSOLGR9810 series. Molding or encapsulation process using liquid form can be used such as compound 58 and then curing, drying or solidifying compound 58 method, and can include for the compound nozzle (dispendingmachine) dispensing machine 58 distribution in a mould or by compound for injection molding manner 58 filling the mold cavity.

Now with reference to Figure 8 and Figure 9, once the molding compound or encapsulation compound 58 has been solidified, package 2 can be from the adhesive tape 62 to remove. As discussed above, if a plurality of package 2 coupled to the same a piece of adhesive tape 62, by sawing or other technique, the singulation can be from the adhesive tape 62 remove the package 2 before or after, and in addition, can use the laser marking or another marking technology before or after the singulation from the adhesive tape and 62 remove the package 2 of the package before or after 2 marking.

In various implementations, as an unlimited example, the processing step of the above-mentioned one or more of the pick-up and can be used to implement the placement tool, such as:a spacer 30 of the surface of the 1st 32 is coupled to the die mark 18 of the surface of the 1st 20, the die and 50 of the surface of the 1st 52 coupled to the spacer 30 of the surface of the 2nd 36.

Although the diagram only shown with a single die 50 packaging 2 example, in the realization mode, can use the stated method or can include additional method to form the multi-chip package (multi-die package), or forming a stacked die package, and so on, wherein the more than one die 50 is fixed on the spacer 30 and/or each package wherein there are a plurality of die mark 18 and/or a plurality of spacers 30.

The extension of the disclosed method and system for die size incorporated into the die and the package of the semiconductor device of one of the basic and novel characteristic is the use of extending the die size or increased, with the maximum width of the die mark the maximum width of the greater, die marks without modifying the structure and/or without modifying the structure of the lead frame means, and at the same time mark the die to the top plane and the lead frame to the top plane of the plane of the to be maintained at the same (or substantially the same plane). The extension of the disclosed method and system for die size incorporated into the die and the package of the semiconductor device of one of the basic and novel characteristic is, without modifying the previous version of the conventional use of the package under the condition of the lead frame, in a particular package or seal group increase in the capacity of the die size.

In the realization mode, packaged semiconductor device includes the: die mark and a plurality of lead frame finger, each lead frame means spaced apart from the proximal end and the die mark; spacer at the surface of the distance piece and electrically coupled to the mechanical coupling of the surface of the 1st die; the die surface of the die at 1st and electrically coupled to the mechanical coupling of the spacing part surface 2nd; at least one electrical connector on the surface of the die to the 2nd at least one electric contact member and at least one lead frame beacon coupling; and die envelopment, spacer, at least one of at least a portion of the electrical connector, at least a portion of the die mark each lead frame means and at least a portion of the molding compound; wherein the spacer along the surface of the spacing part of the width of the die 2nd along the die mark mark the surface of the 1st width larger.

In the realization mode, the surface of the die with the die 1st 2nd surface opposite of the marking on one side of the die, the surface of the spacing part in the 1st 2nd relative to the surface of the spacing part on one side of the spacer, and the surface of the die with the die 1st 2nd surface opposite to the one side of the die.

In the realization mode, each lead frame and die are marked to gap width, and the spacing part across each gap width and in each lead frame means is extended.

In the realization mode, each of the proximal end of the lead frame means under the spacer.

In the realization mode, die labeled 1st surface and each lead frame of the 1st surfaces are substantially coplanar.

In the realization mode, die labeled 1st surface and each lead frame of the 1st surfaces are substantially coplanar under the spacer.

In the realization mode, the spacer includes at least one is configured to receive the groove of the insulating material.

In the realization mode, the insulating material is coupled to the spacer and at least one lead frame to at least one groove between the.

In a semiconductor device of the package extending die size in the mode of implementation of the method, the insulating material coupled to the spacer and at least one lead frame finger between the insulating material comprising the step of coupling to the spacer of the groove in the surface of the 1st.

With extension in the form of the die size of the semiconductor device of the package in the mode of implementation of the method, the method includes singulation-encapsulated semiconductor device.

In the explained above is extended to the size of the die and method and system achieve assembly, sub-assembly, method and sub-method is the specific realization mode, should be clear that, without departing from the spirit of be under the condition of a number of changes is made, and these realize assembly, sub-assembly, method and sub-method can be applied to realize the way of the other die size of the method and system.