Semiconductor device and semiconductor device producing substrate and production method for semiconductor device producing substrate

Mode of execution

With reference to the following detailed descriptions of embodiments of the present invention.

Figure 1 is schematic chart of said longitudinal section of the invention in an example semiconductor device. Furthermore, corresponding to the diagram of Figure 2 is A-A section omitting the wire diagram of the earth's surface in a perspective state plane 1 map of the semiconductor device, Figure 2 1.

As shown in Figure 1, a semiconductor device is provided with P: the die 20 ; loading on the die pad 20 and is provided with the electrode 30a of the semiconductor element 30 ; is disposed in the die cushion 20 a plurality of electric conduction around 10 ; connected with the semiconductor element 30 electrode 30a and conducting portion 10 of the metal wire 3 ; and semiconductor element will be at least 30, conductive wire 10 and 3 seal the sealing resin 40.

Wherein the conductive section 10 is formed by copper or copper alloy with the metal foil 1 and arranged on the metal foil 1 upper side and the lower side of the conductive portion of the cladding 2, 2. Furthermore, the die 20 with the conductive section 10 the conductive portion of the the lower side of the plating layer 2 is arranged on the same plane of die pad coating 2b, the die pad coating 2b is loaded with the semiconductor element 30.

That is to say, the die 20 having the semiconductor element is formed inside the 30 the recess 22 the measured 21, dam portion 21 with the conductive section 10 metal foil 1 are arranged in the same plane of the foil 1a and is arranged in the metal foil 1a the upper and lower sides of the and the conducting part 10 the conductive portion of the cladding 2, 2 the coating of the same plane 2a, 2a.

Conductive section 10 of the metal foil 1 as mentioned above, is formed by copper or copper alloy, the dam portion 21 of the metal foil 1a by the and the conducting part 10 of the metal foil 1 is formed of the same material.

Furthermore, the dam portion 21 of the upper and lower sides of the coating layer 2a, 2a, and the conducting part of the 10 upper side and the lower side of the conductive portion of the cladding 2, 2 formed of the same material.

In this way, the die 20 dam portion 21 of the layer structure 2a, 1a, 2a, and the conducting part in 10 the layer structure of the 2, 1, 2 substantially the same.

Furthermore, the die 20 measured of 21 on the lower side of the plating layer 2a, and the die pad coating 2b integrally formed.

Semiconductor element 30, die by 20 dam portion 21 surrounds the recess 22 the inner, semiconductor element 30 electrode 30a metal wire 3 for the electrical and electric conduction part 10 the conductive portion of the plating layer on the upper side 2 is connected with the, semiconductor element 30 electrode 30a by metal wire 4 (additional metal wire) electrically and die the 20 measured of 21 the upper coating layer 2a is connected, to be grounded welding.

Furthermore, semiconductor element 30, conductive section 10 and a metal wire 3, 4 with the sealing resin 40 sealing. The die 20 die pad coating 2b, part of the dam 21 on the lower side of the plating layer 2a and the conductive part 10 the conductive portion of the plating layer on the lower side 2, from the sealing resin 40 is exposed out of the bottom of the to, at the same time the die 20 die pad coating 2b, part of the dam 21 on the lower side of the plating layer 2a and the conductive part 10 the conductive portion of the plating layer on the lower side 2, from the sealing resin 40 only stressed its thickness.

Furthermore, conductive part 10 and the lower side on the conductive portion of the cladding 2, 2, the dam portion 21 the upper and lower sides of the coating layer 2a, pad coating tube core 2a and 2b, has a multi-layer structure of the precious metal coating.

The non-lead structure P of the semiconductor device, the semiconductor element 30 the following, there is only die pad coating 2b, the thinning can be provided, the semiconductor device of high reliability. Furthermore, as shown, conductive section 10 and the die 20 measured of 21, the central metal foil 1, 1a with respect to the conductive part cladding 2 and the coating layer 2a into slender waist shape , the electrically conductive part of the cladding 2 and the coating layer 2a become a prominent state. The protruding part 2, 2a the sealing resin 40 anchoring effect, therefore, conductive section 10 and the die 20 with the sealing resin 40 the bonding strength is high. Furthermore, conductive section 10 the conductive portion of the cladding 2, the die 20 measured of 21 the coating of the die pad coating 2a and 2b, in the state of projecting from the back side, that is to say, because the state of   off Stand to ensure that, when mounting the semiconductor device P, on the mounting substrate can be prevented and conductive caused by foreign material floating (terminal), improve the reliability of the installation. Furthermore, there are also prevent the solder paste extrusion caused by the effect of a short.

Figure 3 (a)-(d) is expressed in the Figure 1 shown in the method of manufacturing a semiconductor device of the process chart, the following reference to the diagram illustrates manufacturing sequence.

First of all, as shown in Figure 3 (a) shown in, ready to have a base material layer 51 and is arranged on the substrate layer 51 on the adhesive layer 52 of the board 50, in the adhesive 50 in the adhesive layer 52 is formed on the plurality of conductive section 10, and is formed the recess 22 the measured 21 of the die 20, B manufacturing substrate. As shown, conductive section 10 and the die 20 measured of 21, having respective up and down protruding part 2, 2a, on form such a conductive part 10 and the die 20 to the substrate making process of the latter.

Furthermore, as shown in Figure 3 (b) shows, the semiconductor element 30 is arranged in the die cushion 20 the recess 22 the inner, with silver-pulp, adhering film die merchantable die adhesive material, such as the semiconductor element 30 is fixed on the die pad 20 die pad coating 2b after the, wire 4 for the measured 21 and the upper surface of semiconductor element 30 electrode 30a to be grounded welding, metal wire 3 is electrically connected with the conductive section 10 and the upper surface of semiconductor element 30 electrode 30a. In this way, semiconductor element 30 is fixed on the die pad coating 2b is, therefore, compared with the traditional semiconductor device, can realize 100-200 thickness of microns in thickness.

Furthermore, as shown in Figure 3 (c) is shown, with the sealing resin 40 sealing the semiconductor element 30, wire 3, 4, conductive section 10 and the die 20, the adhesive 50 is formed on the semiconductor device. The sealing resin 40 sealing, the transmission of the normally used for metal mold molding. Molding, the die cushion 20 the recess 22 in order to improve the sealing resin 40 flow, the measured 21 be set Image 2 shown in the passage 21a. Specifically, Image 4 (a) that, for the transfer of the resin in the direction at right angles to the direction of flow of the measured X 21 is provided with a passage 21a, or Image 4 (b) the direction at right angles, as the measured removed 21 itself, or Image 4 (c), in the direction of flow X and the direction at right angles of two measured in 21 is provided with a plurality of passages 21a, thus can improve the sealing resin 40 flow. In these Figure 4 (a)-(c) in, the right side of the Figure and the lower side of that viewed in a direction from the side of the respective Figure. Moreover, after the moulding, according to need to the sealing resin 40 post-curing heating. Curing the adhesive after heating may be 50 before the separation of, the can also be carried out after the same. Furthermore, as shown in Figure 3 (d) is shown, the board 50 from the sealing resin 40 separating, in Figure 1 the semiconductor device P is shown.

The above-mentioned substrate manufacturing process, the adhesive is also 50 in the adhesive layer 52 is formed on the plurality of conductive section 10 and the die 20 of the sequence as shown in fig. 5 (a)-(e) is shown. The following is a description of these processes.

As raw materials of the conductive part and the die, is formed by copper or copper alloy to the metal foil. As the metal foil 60, from strength considerations, the use of 0.01-0.1 mm thickness. Furthermore, first the two sides of the metal foil is pasted dry film resist, as shown in Figure 5 (a) is shown, with the photolithography for conductive part and the shape of the die pattern to the contrary, are respectively the metal foil 60 dry film resist of two surface 61 to form a pattern.

Furthermore, as shown in Figure 5 (b) shows, in order to dry film resist 61 as a mask, with the conductive section 10 corresponding to the metal foil 60 is provided with the upper and lower sides of the part of the plating layer 62, in addition, corresponding to the shape of the die to the metal foil 60 on the part of the lower side of the plating layer 62, as shown in Figure 5 (c) shows, removing the dry film resist 61. The portion of the plated layer 62, as shown in Figure 6, as shown in the enlarged, by having as a copper diffusion barrier layer 63 is the nickel plating film and the diffusion barrier layer 63 on the precious metal coating 64 of a multi-layer structure. Here, as for the noble metal coating 64 of the noble metal is at least Au, Ag, Pt, any kind of Pd. Furthermore, the noble metal coating 64 in the form of 1 layer, also in the form of 2 or more layers.

As part of a plating layer 62 of specific example, the can be cited as a diffusion barrier layer 63 the coating is thick of 5 micrometers on the nickel plating film, overlapping as a precious metal coating 64 the coating is thick of 0.1 micron palladium plating film, plating film thickness 0.05 micron gold plating the shape of the layer. Of course, not limited to this, can be according to the requirements of the manufacture of a semiconductor device to form a wide variety of combination and thickness, but as part of a plating layer 62 may desirably be an overall thickness of 0.1-50 the left and right   m.

Furthermore, as shown in Figure 5 (d) is shown, corresponding to the conductive side 10 and the die 20 in its surface and a back surface partially forms a part of the plating layer 62 of the metal foil 60 pressurizing the adhesive 50 of the adhesive layer 52 side, the part of the plating layer is 62 buried in the adhesive layer 52 state. Furthermore, in the sticking state, as shown in Figure 5 (e) shows, in order to part of the plating layer 62 as the resist, etching the metal foil 60, formed by metal foil 1 and arranged on the metal foil 1 upper side and the lower side of the conductive portion of the cladding 2, 2 form the conductive section 10, by the metal foil 1a and arranged on the metal foil 1a the upper and lower sides of the conductive part coating layer 2a, 2a of the measured a 21 and die pad coating 2b of the die 20. In this case, because the metal foil 60 is etched side of, the arrangement of the form as shown by the metal foil 60 upper and lower part of the plating layer 62 a shape of a protruding portion. In this the end of the metal foil 60 after the etching process, such as stamping press for cutting means to adhesive processing 50 processing of the, get B substrate for manufacturing semiconductor device.

Figure 7 is schematic chart of that in a longitudinal section in another example of the present invention semiconductor device. Figure 7 the semiconductor device P is shown, and Figure 1 of a semiconductor device compared with P, omitting the die pad 20 measured of 21, ground solder 4 or power supply welding 3 is connected to the independent of the die cushion 20 of the conductive section 10. By adopting such a structure, can be provided also with diagram 1 is the same as P of the semiconductor device can be thin and high-reliability semiconductor device.

Furthermore, the present invention provides a semiconductor device manufacturing method is a practical, can be set together with a plurality of semiconductor device manufacturing. Figure 8 represents an example thereof. Figure 8 is graph of that for manufacturing semiconductor device of a gesture B a plan view of the base plate, the adhesive 50 will be above 1 a die 20 and the conductive part formed around the same 10 as 1 block 70 expressed, the block 70 can be a plurality of terrain to form a chessboard-shaped. In Figure 8 in, for example, adhesive 50 of the width (W) to 65 mm, the adhesive after a predetermined process 50 form a plurality of block 70, producing continuous coiled substrate. The width of the thus obtained 65 mm of B substrate for manufacturing semiconductor device, the semiconductor element to the next loading process in appropriate cut into resin sealing process using the number of blocks required. In this way, together with a plurality of semiconductor element at the time of resin sealing, resin after the separation of the adhesive after sealing, slicer or punch for cutting into a predetermined size, to be made monolithic, then is semiconductor device.

Used in the present invention the method for manufacturing semiconductor device board 50, to the resin sealing process has been completed, and reliably fixed semiconductor element 30 and conductive section 20, and the P is separated from the semiconductor device can be easily peeled. Such adhesive board 50, with the above substrate layer 51 and an adhesive layer 52. The substrate layer 51 no special restrictions on the thickness of the, but are most usually 12-200 the left and right   m, for the best the 50-150  m. Furthermore, the adhesive layer 52 is also no particular restrictions on the thickness of the, but are generally 1-50 the left and right   m, is preferably the 5-20  m.

Furthermore, as the adhesive 50, a base material layer 51 in 200 the elasticity modulus of which is under [...] 1.0GPa the above, it is preferable to use 200 the under [...] elastic modulus of 0.1 MPa or more adhesive layer 52. Furthermore, the determination of the elastic modulus of the detail in the method of the embodiment.

In carrying out metal wire welding and the like in the loading process of the semiconductor component, the temperature is approximately 150-200 the conditions of high temperature about [...]. Therefore, the adhesive 50 material layer 51 and the adhesive layer 52 in the heat resistance of these requirements can withstand. Based on such a point of view, a layer 51, and is suitable for adopting a 200 the under [...] 1.0GPa the elasticity modulus of the above, preferably 10Gpa the above. Substrate layer 51 of the elastic modulus is preferably normally 1.0GPa -1000GPa left and right. Furthermore, as the adhesive layer 52, and is suitable for adopting a 0.1 MPa or more elastic modulus, preferably 0.5M more than   Pa, more preferably 1 MPa or more. The adhesive layer 52 of the elastic modulus, usually preferably 0.1-100 MPa the left and right. Having such modulus of elasticity of the adhesive layer 52, such as the loading process of the semiconductor element is not easy to softening, flow, can be more stable connection.

Furthermore, by adopting the high elastic modulus of the adhesive layer 52, through fig. 5 (d) is shown in the pressure of the process, coating the conductive part 62 buried in the part of the adhesive layer 52, in Figure 3 (d) of the final stage is shown, the conductive section 10 and the die 20 on the lower side of the, coating the conductive part can be arranged into a 2, plating layer 2a and die pad coating 2b from the sealing resin 40 the surface of the state of the called Stand off, has the advantages of improving the reliability of the semiconductor device for the effect of the installation.

Adhesive 50 material layer 51 can be organic matter, can also be inorganic, the operability when taking into account the transportation, such as warping of the molding, it is preferable to use metal foil. As such metal foil, can cite SUS foil, Ni foil, Al foil, copper foil, copper alloy foil, etc., but from the rich variety of cheap and can be taken into account, preferably copper, copper alloy. Furthermore, as such a base material layer 51 of the metal foil, in order to ensure that the adhesive layer 52 anchor of, single surface roughening treatment is preferably carried out. As a method of roughening treatment, sand blasting, and the like can be adopted the known physical roughening method or etching, film coating chemical roughening any one in the method.

Adhesive as forming the 50 the adhesive layer 52 of the adhesive, there is no special restriction, but it is preferable to use epoxy resin, epoxy curing agent, a thermosetting adhesive containing an elastomer. Under the condition of the heat-curable adhesive, usually, the substrate is attached to the so-called uncured B the stage state, that is to say, can be used for the 150 [...] of the following laminate under lower temperature, and the solidified after, thus improving the elastic modulus and improve the heat resistance.

As an epoxy resin, can cite epoxy glycidyl amine type epoxy resin, bisphenol F-type epoxy resin, bisphenol A-type epoxy resin, linear phenolic epoxy resin, cresol- linear epoxy resin, biphenyl type epoxy resin, wherein the epoxy resin, an aliphatic epoxy resin, alicyclic epoxy resin, heterocyclic epoxy resin, epoxy resin including a spiro ring, such as the epoxy resin halogen , they may either be used alone or 2 or more mixed for use. As the epoxy curing agent, can be cited various imidazole compound and its derivatives, amine-based compounds, dicy, hydrazine compounds, phenolic resin and the like, they may either be used alone or 2 or more mixed for use. Furthermore, as an elastic body, can be cited propylene resin, acrylonitrile-butadiene copolymer, phenoxy resin, polyamide resin and the like, they may either be used alone or 2 or more mixed for use.

Furthermore, the adhesive layer 52 to the bonding of the metal foil used for testing may desirably be an 0.1-15N/20 mm. Preferably 0.3-15N/20 mm. Here, according to the size of the bonding conductive appropriate selection within the aforementioned range. That is to say, the conductive part of a large size, relatively small bonding strength, the bonding of the conductive portion is preferably set to be the size of the large hours. The adhesive with the bonding force, has moderate cohesive force, making the substrate-loading process of the semiconductor element is fixed on the adhesive layer in the conductive portion of the offset is not easy to occur. In addition the sheet separation step, adhesive good separation from the semiconductor device, can reduce the damage to the semiconductor device. Furthermore, the determination of the adhesion of the detail of the method of the embodiment.

The adhesive 50 in, can be according to the need to give anti-static function. Adhesive to 50 when the antistatic function, with the static electricity preventing agent, the conductive filling material mixed in the adhesive layer in the method. Furthermore, there is also a base layer 51 and an adhesive layer 52 and the interface of the base material layer 51 the bottom surface of the electrostatic coating method of preventing agent. By giving the antistatic function, can inhibit the semiconductor device is separated from the adhesive of the electrostatic.

As electrostatic preventing agent, with anti-static function as long as they are, there is no special restriction. As a specific example, for example, can use the propylene gender, propylene anion, anhydrous maleic acid-ethylene-based cationic surface active agents and the like. As the material of the anti-static layer, in particular, can be cited Pa [...] , PX [...] , [...] materials such as P ([...]). Furthermore, as a conductive filler, may be using a commonly used such as Ni, Fe, Cr, Co, Al, Sb, Mo, cu, Ag, Pt, metal such as Au and their alloy or oxide, carbon black, graphite and the like. They may either be used alone or 2 or more kinds combined to use. Conductive filling material can also be as a powder, any of the fiber. Other, adhesive can be added to the anti-aging agent, pigment, plasticizer, filler, the viscous additive, a variety of known additives.

Embodiment 1

Preparation of adhesive

Bisphenol A-type epoxy resin (Japan   epoxy   resin   Co. Systems, epoxy resin 1002) 100 parts by weight, of acrylonitrile butadiene copolymer (Japan [...]society system , a [...][...] 1072J) 35 parts by weight, of phenolic resin (Arakawa chemical society system , P-180) 4 parts by weight, imidazole (four countries society system[...] , C11Z) 2 parts by weight, is dissolved in 350 parts by weight of methyl ethyl ketone, to obtain an adhesive solution. In the thickness of 100 the single-side   m copper alloy foil roughened 51 (a [...]society system , BHY-13B-7025) after coating on, the can 150 is dried under [...] 3 minutes, thereby forming a thickness of the 15   m of an adhesive layer, the adhesive 50. The fishplate bar 50 on the adhesive layer 52 cured in 100 the elastic modulus is under [...] 2.5 × 10^-3 Pa, after curing, the 200 [...] lower elastic modulus is 4.3 MPa, for the adhesion of the copper foil 12N/20 mm. Furthermore, used as a base material layer 51 a of the copper foil of the 200 for modulus of [...] 130GPa.

Substrate for manufacturing semiconductor device manufacturing

First of all, the thickness is 40 the (Olin7025)   m copper foil 60 laminated on both sides of a dry film resist 61 (Tokyo [...] , AR330 [...] - [...]). Furthermore, dry film resist is formed with photolithography and the conducting part and the die pattern the pad is opposite. Furthermore, in order to form the pattern to the dry film resist as a mask, the copper foil are applied on the surface of the nickel plated film and Au plating, cladding forming a conductive part 62 back, removing the dry film resist. Furthermore, via the adhesive layer 52 will be disposed partially the nickel plating layer and the Au plating layer of the copper foil laminates 60 attached to the pressurized side of the side board 50 on. Furthermore, full heating and pressurizing, the coated part no gap and an adhesive layer. Furthermore, in the attached state, in order to Au plating layer is resist etching copper foil 60 to form the conductive section 10 and the die 20. In the etching process, is also etched copper foil 60 side, thereby the copper foil and the lower portion of the Au and nickel formed by the protruding portion 62. Finally, processing leaves sticks stamping press for the appearance of the plate.

Furthermore, according to the Figure 8 example (W to 65 mm) in the pattern of the adhesive shown in the 50 and electric conduction portion is formed on the die pad. In a block 70 in, in order to Figure 2 the pattern of the adhesive shown in the 50 is formed on the conductive section 10 and the die 20.

The loading of the semiconductor element

For the test the aluminum deposition silicon chip (6 mm × 6 mm) 30 is fixed in the above-mentioned adhesive 50 die of 20 the recess 22 the inner. Specifically, the die feeder for coating adhesive after the die pad, on the same silicon chip 30, fully pressurized the tube core is not residual bubbles in the adhesive, after the 150 [...] heating and pressurizing under 1 hour. Furthermore, diameter is used as the the 25 a gold wire   m, the silicon chip 30 electrode 30a and the die 20 measured of 21 and between the silicon chip 30 electrode 30a and conductive section 10 is welded between.

On the above-mentioned 1 unit (4 × 4 a a) of the 10 unit, in other words, the 160 evaporation aluminum wire to weld the chip. The metal wire for welding success rate 100%. Furthermore, by using a transfer molding molded sealing resin 40 (scheme east date electricity , HC-100). After the resin molded, adhesive stripping at room temperature. Furthermore, in the 175 under [...] 5 hours, post-cured in the drier. Subsequently, in a microtome 1 carried out in units of blocks obtained by cutting the semiconductor device P.

With soft X-ray device (Micro   Focus   X-ray videofluoroscopy device: island Tianjin manufacturing the systems, SMX-100)) P to the semiconductor device as a result of internal observation, acknowledge that the conductive section 10 and of a sealing resin is very high bonding strength of the semiconductor device P, there is no wire deformation and chip offset and the like, and conductive section 10 of the protruding portion 2 is in the state of the embedded in the sealed resin.

Furthermore, wire welding conditions, transfer molding conditions, method for determining elastic modulus, cohesive force measuring method, the success rate of the welding wire is as follows.

Wire welding conditions

Device: Corporation new sichuan system "UTC-300BI   SUPER"

Ultrasonic frequency: 115KHz

Ultrasonic output time: 15 milliseconds

Ultrasonic output: 120mW

Welding load: 1018N

Search load: 1037N

Transfer molding conditions

Device: TOWA forming machine

Forming temperature: 175 the [...]

Time: 90 seconds

Clamping pressure: 200KN

Transfer speed: 3 mm/sec

Transfer pressure: 5KN

Method for determining elastic modulus

A base material layer, the adhesive layer:

Evaluation instrument society system[...] viscoelastic spectrum meter "ARES"

Temperature rising speed: the 5 [...] /min

Frequency: 1Hz

Measuring mode: stretching mode

Cohesive force measuring method

Width 20 mm, length 50 mm adhesive of 50 in the 120   × 0.5 MPa × 0.5m/min under the condition of, in 35 the copper foil   m ([...] a systems, C7025) after being laminated on, the can 150 is placed in hot-blast stove [...] 1 hour later, at a temperature of 23 the [...] , humidity 65% RH under the conditions of the atmosphere, tensioning speed 300 mm/min, in the 180° direction stretching 35 the copper foil   m, value is regarded as the center of the bonding strength.

The success rate of the wire to weld

The tester, used for welding [...] "PTR-30", in a measuring mode: stretching test, measurement speed: 0.5 mm/sec determined under the tension strength of the welding wire. The stretching strength 0.04N the above is successful, less than 0.04N is set to the failure. The success rate of the welding wire is calculated from their the success of the determination of the ratio of the result.

Embodiment 2

In the embodiment 1 in, in addition to using the 18   m copper-nickel alloy foil ([...] a systems, C7025) as metal outside foil , the remaining of the embodiment 1 the same, the manufacturing semiconductor device. The metal wire for welding success rate 100%. Internal to the semiconductor device as a result of the observation, acknowledge that no wire deformation and chip offset, and of a sealing resin is very high bonding strength of the semiconductor device.

In the embodiment of this invention a detailed description, however, according to the semiconductor device of this invention and its manufacturing method is not affected by the above-defined in any of the embodiment, without deviating from the scope of the intention of this invention it is clear that various changes can be made.