Semiconductor device
Technical Field The invention relates to a semiconductor device, in the semiconductor device, such as memory component and/or logic element such as semiconductor element, and the high-frequency signal used for processing high-frequency semiconductor element is mounted on the common substrate. Background Art The continuing in recent years, the semiconductor element (such as a mobile phone or the like in an electronic device electronic assembly) more high integration density of growing demand exists, in order to realize miniaturization of the electronic device technology and in improved. In response to this demand, development of such a semiconductor device, in the container or package holding a plurality of semiconductor elements with different functions (for example memory element and/or as the logic elements of the microprocessor). This kind of semiconductor device is called SiP (system in package). And, on these electronic device, to the external unit and/or device communication, the need to improve communication speed. Therefore, for example, for processing 0.1-10GHz of the high-frequency signal in the frequency band of the high-frequency semiconductor element can be set up in the containers or within the package as described above. Figure 1 is chart of display mounting substrate, the substrate containing the memory component and/or logic element such as a microprocessor corresponding to the semiconductor device of the semiconductor element, and comprises a high-frequency semiconductor element of the semiconductor device. In the illustrated embodiment, the bottom plate (electronic device of the main electronic circuit substrate) 55 is mounted on one side of the: 1st semiconductor device 10, includes, for example, the same corresponding to the memory component and/or logic element of the semiconductor element 21 and 25 ; and 2nd semiconductor device 40, which comprises a high-frequency semiconductor device 47. 1st semiconductor device 10 comprises a supporting substrate 11, mounting the supporting substrate 11 of the semiconductor element on the one side 21 and 25, and the supporting substrate 11 is arranged on the other side of the external connection terminal 31. Supporting substrate 11 corresponding to the semiconductor element mounting substrate, which comprises: through hole (the conductive material filling, but hereinafter referred to as through hole) 13, which passes through the supporting substrate 11 of the substrate 12 ; wire connecting portion 14 and 15, it is is arranged in the through hole 13 at the upper end of the; connection pads and 16 and 17, it is is arranged in the through hole 13 at the lower end of the. The semiconductor element 21 is mounted on a support substrate 11 is, and includes an electrode pad 22, these electrode pads through wire 23 is electrically connected to the supporting substrate 11 of the wire connecting portion 14. Semiconductor element 25 is mounted on a support substrate 11 is, and includes an electrode pad 26, these electrode pads through wire 28 is electrically connected to the supporting substrate 11 of the wire connecting portion 15. Semiconductor element 21 and 15 by the resin 29 along the wire 23 and 28 seal. Connection pad 16 and 17 via the external terminal 31 is electrically connected to the in the bottom plate 55 is provided on the pad 57 or wiring 59, these external terminals 31 for example, spherical or convex form. Note in one embodiment, semiconductor 21 and 25 can be one of the corresponding to the logic element such as a microprocessor, the semiconductor 21 and 25 can be corresponding to another one of the storage element, such as a flash memory. In this case, logic element and storage the relative position of the component (in other words which the semiconductor element is placed on another) can be determined according to the following conditions: for example, is used for realizing the function of the semiconductor elements and a circuit structure of the chip size (area) and the number of terminals. 2nd semiconductor device 40 includes: supporting substrate 41, the supporting substrate 41 is mounted on one side of the high-frequency semiconductor element 47, the supporting substrate and 41 is arranged on the other side of the external connection terminal 53. Supporting substrate 41 corresponding to the semiconductor element mounting substrate, which comprises: through holes 43, which passes through the supporting substrate 41 substrate 42 ; wire connecting portion 44, it is is arranged in the through hole 43 at the upper end of the; connection pads and 45, it is is arranged in the through hole 43 at the lower end of the. High-frequency semiconductor element 47 (its corresponding to the suitable for processing has such as 1GHz the above frequency of the high-frequency analog signal semiconductor element) is mounted on a support substrate 41 is, and includes an electrode pad 48, these electrode pads through wire 49 is electrically connected to the supporting substrate 41 of the wire connecting portion 44. High-frequency semiconductor element 47 by the resin 51 along the wire 49 sealing. Connection pad 45 via the external connection terminal 53 is connected to the bottom plate 55 is provided on the pad 58 or wiring 59, these external connection terminal 53 formed as a spherical or convex block. In the bottom plate 55 is arranged on the one side of the wiring 59 realize 1st semiconductor device 10 and 2nd semiconductor device 40 is electrically connected between the. For example, Japan Patent opens especiallypublic number 2003-110084 discloses a technology that is set up as described above. In order to achieve, for example, a mobile telephone in the electronic device such as the micromation of the technical improvement and, processing the high-frequency signal of the semiconductor element are preferably mounted in as mentioned above and the logic element and/or storage elements on a common substrate, and is not arranged into separate semiconductor device. However, as the field of well known to the professional technical personnel, high-frequency semiconductor element is easy to be affected by the high-frequency semiconductor element is located in the vicinity of the semiconductor element other wiring and influence of the electromagnetic field. For example, in the Figure 1 embodiment, if the semiconductor element 21 and 25 and the high-frequency semiconductor element 47 is mounted on a common support substrate (interposer) of the bottom plate 55 is, and is sealed (encapsulated), in through the connection to the high-frequency semiconductor element 47 of wiring/wire transmission signal and through the connected to the semiconductor element 21 or 25 wiring/wire transmission will produce interference between the signals, and cannot obtain desired electrical characteristics. Therefore, in the prior art, as shown in Figure 1, the semiconductor element 21 and 25 and the high-frequency semiconductor element 47 are respectively as a separate semiconductor device 10 and 40 is installed in the board 55 on. However, when more than one is sealed (encapsulated) of the semiconductor device is as mentioned above is installed in a common on a supporting substrate, the supporting substrate packing density will drop, and this is an obstacle to miniaturization of the electronic device. Furthermore, when the in addition to corresponding to the high frequency of the semiconductor element of the semiconductor device is a plurality of semiconductor devices formed on a supporting substrate, and for each semiconductor device to try to obtain the desired electrical properties, then the supporting substrate may be a complex design, and the manufacturing cost of the electronic device will increase. Furthermore, in the above-mentioned structure, the other high-frequency semiconductor device is connected with a semiconductor device (e.g. FIG 1 the wiring 59) wiring length will be very long, thus the transmission of the high-frequency signal can be generated when the larger the transmission loss. Content of the invention The prior art related to the present invention is directed to one or more problems and is visualized, and the purpose of this invention to provide with improved packaging density of the semiconductor device, the semiconductor device can prevent high-frequency signal transmission loss and realizing miniaturization of the electronic device technology and in improved. In one aspect of the invention, the semiconductor element and the 1st 2nd in the common semiconductor element is mounted on a supporting substrate, thereby increasing the packaging density of the semiconductor device. Furthermore, the high-frequency electrode is arranged on one side of the support substrate corresponding to the relative position of the position of the through hole, and the external connection electrode is arranged on the other side of the support substrate corresponding to the relative position of the position of the through hole, thereby reducing the high-frequency electrode and the external connection electrodes path length of signal transmission between, and to prevent the transmission loss of a high-frequency signal. In addition the semiconductor element includes a 2nd coupled to the high-frequency electrode and the-oriented re-wiring of the support substrate. In the preferred embodiment of the present invention, face down semiconductor element is 2nd mounted on the support on one side of the substrate. In this embodiment one of the scheme, the high-frequency electrode can be connected to the supporting substrate. The invention in another preferred embodiment, the central axis of the high-frequency electrode is located in the external periphery of the through hole. In one aspect of the invention, high-frequency electrode is set up like this, in order to make the mandrel is located in the external periphery of the through hole, thus can accurately carry out the high-frequency electrode and between the external connection electrodes of the high-frequency signal transmission. The invention in another preferred embodiment, the 1st 2nd semiconductor element is stacked on the semiconductor element. In this embodiment one of the scheme, 1st 2nd semiconductor element is stacked on the top of the semiconductor element, so as to prevent the transmission of the transmission loss of a high-frequency signal at the same time, can reduce the size of the support substrate, and realizing miniaturization of the semiconductor device. The invention in another preferred embodiment, the semiconductor element includes a 2nd is set up as the ground potential of the shielding member. In the embodiment in a programme, is set up as the ground potential of the shielding member is set up in the 2nd on the semiconductor element, thus can prevent from 1st 2nd semiconductor element of the semiconductor component by an influence of a noise. The invention in another preferred embodiment, the semiconductor element includes a 2nd form the passive element of the re-routing (rewiring). In this embodiment one of the scheme, through the use of re-routing a passive element is formed, does not need to be formed to separate a passive element, the 2nd semiconductor element can be reduced in the number of necessary components and the installation space. Furthermore, the impedance can be reduced, thus can improve the electrical characteristics of the semiconductor element 2nd. The invention in another preferred embodiment, a pair of the semiconductor element includes a 2nd re-wiring structure, which comprises a part parallel to each other. In this embodiment one of the scheme, parallel portions with each other through the provision of a pair of heavy wiring structure, the cross talk of the wiring can be eliminated, thus noise can be reduced. The invention in another preferred embodiment, the semiconductor element includes a 2nd wiring length have the substantially equal a set of re-wiring structure. In this embodiment one of the scheme, substantially equal to the wiring length is provided with a set of re-wiring structure, can be time ( timing skew) of the adjustment and optimization. Description of drawings Figure 1 is the structure profiles of display according to the prior art containing a plurality of semiconductor device mounting substrate; Figure 2 is section of the display according to the present invention 1st embodiment of the semiconductor device structure; Figure 3 is section of display Image 2 of the semiconductor device is installed in the state of the mounting substrate; Figure 4 is plan view of the plan viewed from the bottom side 2 of the semiconductor device; Figure 5 is section of the display in fig. 2 are provided in the semiconductor device of a high-frequency semiconductor element structure; Figure 6 is an exemplary arrangement diagram of the semiconductor element is arranged in that the heavy wiring; Figure 7 is of connect map used for high-frequency semiconductor element in the outside of the mounting pitch of the connection terminal is used for supporting an external connection terminal of the substrate is equal to the mounting pitch of the high-frequency semiconductor element under the condition of the high-frequency external connection terminal; Figure 8 is graph of is used for high-frequency semiconductor element in the outside of the mounting pitch of the connection terminal of the substrate is used for supporting the installation of the external connection terminal half of the pitch of the (1/2) under the condition of, high-frequency semiconductor element of the high-frequency external connection terminal; Fig. 9 is used for high-frequency semiconductor element in the outside of the mounting pitch of the connection terminal of the substrate is used for supporting the installation of the external connection terminal k times of the pitch (0 < k < 1) under the condition of, high-frequency semiconductor element high-frequency external connection terminal of the connection graph; Figure 10 is section of display does not include the conductor column (post) of the high-frequency semiconductor element structure; Figure 11 is sectional drawing of the present invention reveals according to the 2nd embodiment of the semiconductor device structure; Figure 12 is sectional drawing of the present invention reveals according to the 3rd embodiment of the semiconductor device structure; Figure 13 is section of the display according to the 3rd embodiment of the high-frequency semiconductor element structure; Figure 14 is sectional drawing of the display does not include the conductor column high-frequency semiconductor element structure; Figure 15 is section of the display according to the present invention of the 4th embodiment of the semiconductor device structure; Figure 16 is plan view of the plan viewed from the bottom side 15 of the semiconductor device; and Figure 17 is section of the display according to the present invention of the 5th embodiment of the semiconductor device structure. Mode of execution As used herein, will refer to the Figure depicts a preferred embodiment of the invention. (1st embodiment) First of all, with reference to Figure 2-4, described according to the present invention 1st embodiment of the semiconductor device 70. Figure 2 is section of the display according to the 1st embodiment of the semiconductor device 70 structure; and Figure 3 is sectional drawing of display semiconductor device 70 is mounted in the state of the mounting substrate. Figure 4 is a bottom plan view of the Figure 2 in the direction of the arrow of the watch that A of the semiconductor device 70. Note in Figure 2 in, corresponding to the regional B shown in the upper insulating film 76 is mounted on the semiconductor element 101 of the regional (hereinafter referred to as "chip mounting area B"). According to the present embodiment, semiconductor device 70 includes: a support substrate 71, the external connecting terminals 97 and 98, corresponding to the 1st semiconductor element of the semiconductor element 101 and 105, corresponding to the 2nd and high-frequency semiconductor element of the semiconductor component 110. Semiconductor element 101 and 105 and the high-frequency semiconductor element 110 is mounted on the common support substrate 71 on, and is molded resin 122 integral seal. Molded resin 122 is set up for the protection of semiconductor element 101,105 and 110 and their connecting wires. In this embodiment, the semiconductor element 101 by means of the so-called positive upward (face-up) mounting method via the bonding (bonding) layer 104 is mounted on a support substrate 71 on, and the semiconductor element 105 through positive is installed upward via the interface 109 is mounted on the semiconductor element 101 is. 2nd semiconductor element corresponding to the high-frequency semiconductor element 110 by means of the so-called face down (flip-chip) mounting method is mounted on a support substrate 71 on. In this case, semiconductor element 110 of the high-frequency external connection terminal 121 is connected to the connecting pad 87, the connection pad is arranged in the through the supporting substrate 71 of the through hole 81 is at the top end of the. Note in this embodiment, the semiconductor element 101 is set to is larger in size than the semiconductor element 105. Semiconductor element 101 and 105 can be corresponding to the memory element or logic element (for example, a microprocessor), which can be combined according to the needs or requirements. Because the chip size and external connection terminal according to the quantity/arrangement may be needed in each electronic device the function of the semiconductor element is changed and the capacity, and the logical memory element can be the relative position of the component according to each specific electronic device to determine the (that is, according to each specific electronic device, in the memory element or a logic element which is placed in another a determination is made). High-frequency semiconductor element 110 corresponding to the processing high-frequency signal such as a semiconductor element of the high-frequency analog signals. Supporting substrate 71 including crosses the support substrate 71 of the substrate 72 a plurality of through holes 73. The supporting substrate 71 on the upper surface of (the surface mounting semiconductor) on, there is electrically connected to a through-hole 73 of the upper wiring 75, covering the wiring 75 of the upper insulating layer 76, and passes through the upper insulating layer 76 of the through hole 78. The upper insulating layer 76 is, set is electrically connected to the through hole 78 of the wire connecting portion 83 and 84. The supporting substrate 71 of the lower surface (the mounting surface of the external connection terminals) is, arranged electrically connected to a through-hole 73 of the lower wiring 88, cover the lower wiring 88 of the lower insulating layer 89, through the lower insulating layer and 89 of the lower through hole 91. The lower insulating layer 89 is, electrically connected to the lower through hole is 91 the connection pad 93. Furthermore, on the lower insulating layer 89 corresponding to the bottom surface of the corresponding region is not provided with the connection pads 93 anti-layer the region 96. Furthermore, in this embodiment provided with through holes 81, the through-hole passes through the upper insulating film 76, substrate 72, and the lower insulating film 89 of the layered structure. The through hole 81 is set up in order to realize the high-frequency semiconductor element 110 of the high-frequency external connection terminal 121 of the connection. According to this embodiment, substrate 72 is made of resin or ceramic material to the insulating sheet/plate is made. The wiring 75 is provided on the substrate 72 on the upper surface of the of 72A is, in order to be connected to the through hole 73, and the upper insulating layer is made of the resin layer 76 is set up as to cover the wiring 75. Through hole 78 in one end is connected to the wiring 75, but at another end is connected to the wire connecting portion 83, 84, wiring 85, or connection pad 86. The through hole 81 is set up corresponding to the high-frequency semiconductor element 110 of the high-frequency external connection terminal 121 of the position of the position. The supporting substrate 71 a side (the upper side), the wire connecting portion 83 and 84 is arranged on the upper insulating layer 76 is, in order to be electrically connected to a through-hole 78. Wire connecting portion 83 via the wire 103 is connected to the semiconductor element 101 of the electrode pad 102. Wire connecting portion 84 via the wire 108 is connected to the semiconductor element 105 of the electrode pad 106. Wiring 85 is set up in the upper insulating layer 76 is, in order to be electrically connected to the corresponding through hole 78. High-frequency semiconductor element 110 the external connection terminal 120 is connected to the wiring 85, wherein the high-frequency semiconductor element is set up as the processing in addition to the signal of the high-frequency signal. Furthermore, the semiconductor element 105 of the electrode pad 106 via the wire 108 is connected to the wiring 85, thus can realize the semiconductor element 105 and the high-frequency semiconductor element 110 is electrically connected between the. Connection pad 86 is disposed on the upper insulating layer 76 is, face down (flip-chip) are provided with high-frequency semiconductor element 110 of the portion of the element mounting surface. Connection pad 86 is connected to the high-frequency semiconductor element 110 of external connecting terminals 120, the high-frequency semiconductor element is set up as the processing in addition to the signal of the high-frequency signal, and in a side connected to the connection pad 86. Furthermore, the connection pads 86 in the other side is connected to the through hole 78. Connection pad 87 is arranged on the upper insulating layer 76 is, in order to at one side connected to the through hole 81 one end of 81A, but at another end directly connected to the face down (flip-chip) mounting the high-frequency semiconductor element 110 of the high-frequency external connection terminal 121. The supporting substrate 71 and the other side (lower side), is electrically connected to a through-hole 73 of the lower wiring 88 and is made of a resin and covering the lower wiring 88 of the lower insulating layer 89. The lower insulating layer 89 is arranged on the bottom surface of the connection pad 93 through laying the through hole 91 is electrically connected to the lower wiring 88. Furthermore, attention to the connection pad 95 is is arranged in the through hole 81 of the bottom end. The connection pad 93 and 95 on the bottom surface, corresponding to the solder bump is of external connecting terminals 97 and 98. Covers the lower insulating layer 89 anti-layer the bottom of the surface area of 96 is disposed on the connection pad 93 and 95 surrounding, in order to prevent the external connection terminals 97 and 98 into contact with each other. As shown in Figure 3, the structure of the semiconductor device 70 via the external connection terminals 97 and 98 is electrically connected to the mounting substrate is 125/wiring the electrode pads 127. In this way, the semiconductor element can be 101,105, high-frequency semiconductor element 110 and a mounting substrate 125, including the high frequency signal between the signal transmission. According to the embodiment of the semiconductor device 70 in, semiconductor element 101,105 and a high-frequency semiconductor element 110 is to be mounted in a common support substrate 71 is, therefore, can reduce the wiring 85 length, thus can be reduced in the semiconductor element 105 and the high-frequency semiconductor element 110 of the transmission between the transmission loss of high-frequency signals. Furthermore, according to this embodiment, high-frequency semiconductor element 110 of the high-frequency external connection terminal 121 is connected to the connecting pad 87, connection pad 95 of a through hole 81 is connected to the connecting pad 87, and in the connection pad 95 is provided on the external connection terminal 98 is connected to the mounting substrate 125 of the electrode pad/wiring 127. In this way, can be in the high-frequency semiconductor element 110 and a mounting substrate 125 high-frequency signal transmission between the (need of high-speed transmission signal of the transmission). As shown in Figure 4, according to this embodiment, the semiconductor device 70 of the support substrate 71 on the lower side of the, external connection terminals 97 and 98 are arranged in a matrix, and four suitable for processing the external connection terminal of a high-frequency signal 98 is set up in the external connection terminal arranged at the position of the most outside, so that the external connection terminal 98 can be easily connected to an external circuit or device. Note the external connecting terminal 97 and 98 in the installation pitch are based on standardized specification is set to a predetermined value. In the below, with reference to Figure 5 to describe high-frequency semiconductor element 110 structure. Figure 5 is section of display high-frequency semiconductor element 110 is as mentioned above face down (flip-chip) mounted on the support substrate 71 the state of on. As shown in the Figure such as this, for example, high-frequency semiconductor element 110 comprises a high-frequency element 111, re-routing 115,116, columnar electrode (conductor) 118, molded resin 119, an external connection terminal 120, high-frequency external connection terminals and 121. High-frequency element 111 corresponding to the silicon (Si) semiconductor element, for example, the silicon semiconductor element including the realization of the high-frequency analog signals suitable for processing the functional element of the electronic circuit. High-frequency element 111 comprises: electrode pad 112 and 113, the pad through the traditional wafer process is formed in one side of the silicon substrate; and insulating layer 114, overlying a silicon substrate and expose the electrode pads 112 and 113. Attention to the function of the electronic circuit element such as a transistor and resistor are not shown in this Figure. Electrode pad 112 for transmission of high-frequency signals corresponding to the electrode pad. On the other hand, for example, electrode pad 113 corresponding to the is connected to a power supply line, ground wire of the electrode pad or for processing the wiring of a low-frequency signal. The insulating layer 114 corresponding to the so-called passivation layer, and are, for example, can be made of silicon nitride (SiN). Wiring 115 along the insulating layer 114 to extend, and on one end is connected to the electrode pad 112. At the other end to, wiring 115 via the columnar electrode (conductor) 118 is electrically connected to the high-frequency external connection terminal 121. Wiring 116 along the insulating layer 114 to extend, and on one end is connected to the electrode pad 113. At the other end to, wiring 116 is electrically connected to the high-frequency external connection terminal 120. According to this embodiment, wiring 115 and 116 is made from copper (cu), and is set up in order to realize high-frequency external connection terminal 121 or the external connection terminal 120 of the mounting position of the adjustment and optimization of the peripheral circuit element (impedance matching). Figure 6 is an exemplary arrangement diagram of display re-wiring in a semiconductor element. Note Figure 6 is shown in the structure of semiconductor element not necessarily corresponding to Figure 5 is shown in the high-frequency semiconductor element 110 structure. However, Figure 6 and shown in Figure 5 is the same as shown in the assembly of the same label is assigned. In fig. 6 an exemplary embodiment, re-routing 124A, 124B and 124C has basically the same and the wiring length of the re-wiring to form a group. Re-routing 124A, 124B and 124C at one side connected to the adjacent electrode pad 113, and at the other side through a conductor post (not shown) electrically connected to an external connection terminal 120. Note the heavy wiring 124B is set to extend along the bypass path, and does not take the shortest path, so that the re-routing 124B can have and heavy wiring 124A and 124C wiring length substantially the same as. For connection to the wiring length has basically the same re-wiring 124A, 124B and 124C the adjacent electrode pad 113, can realize the adjustment and optimization of the irregular. Furthermore, in fig. 6 in, re-routing 125A and 125B form a pair of re-wiring, which comprises a part parallel to each other. Re-routing 125A and 125B one side is connected to the electrode pad 113, these electrode pad 113 is connected to the electronic circuit and the differential circuit unit, and wiring 125A and 125B on the other side (not shown) via the conductor is electrically connected to the external connection terminal 120. Through the arrangement of the circuit unit is connected to the differential of the at least a portion of the re-wiring in parallel to each other, the noise can be reduced. Furthermore, in fig. 6 in, re-routing 126 by the spiral is set to around the electrode pad 112 and realize an inductor, the inductance corresponding to the passive element. Wiring 126 is connected to one side of the electrode pads 112, on the other side (not shown) via the conductor is electrically connected to the high-frequency external connection terminal 121. By adopting the wiring 126 to realize the inductance, passive elements such as inductor there is no need to separately set, and can reduce the component number and the installation area. Furthermore, the passive element is arranged as close to the electrode of the semiconductor component, can reduce the impedance and improved electrical characteristics. Note in Figure 5 the high-frequency semiconductor element 110 in, re-routing 115,116 and external connecting terminal 120,121 through the columnar electrode 118 is electrically connected and mechanically connected with each other, these columnar electrode 118 is set up in the line 115 and 116 on. Through the as mentioned above in the heavy wiring 115 and 116 is provided with a columnar electrode 118, re-wiring 115 and 116 is molded resin 119 sealing. Molded resin 119 can be set up for the protection of wiring 115,116 and columnar electrode 118 (for example it can be made of copper (cu)). External connection terminals 120 and 121 by, for example, can be correspondingly made of lead-free solder bumps. Re-reference to Figure 2 and Figure 3, according to this embodiment, when the high-frequency semiconductor element 110 is face down (flip-chip) mounted on the support substrate 71 is on, the high-frequency external connection terminal 121 is connected to the connecting pad 87, the connection pad is arranged in the through the supporting substrate 71 of the through hole 81 one end of 81A. In this manner, high-frequency semiconductor element 110 of the high-frequency external connection terminal 121 can be via connection pad 87, through hole 81 and is connected with the pad 95 is electrically connected to the external connection terminal 98. In this arrangement, used for realizing the high-frequency external connection terminal 121 and the external connection terminal 98 via the through hole between 81 electric connection of the distance can be reduced, so that the transmission of the transmission loss of high-frequency signal can be reduced. Furthermore, the high-frequency external connection terminal 121 and connection pad 87 have not been set up as the along the support substrate 71 extends, so can reduce the semiconductor element 101 and the semiconductor element 105 the occurrence of mutual interference between. Note the external connection terminal 120 and the high-frequency external connection terminals 121 are arranged on the basis of the pitch of the the installation of standardized specifications is set to a predetermined value. In the below, with reference to Figure 7-9-described high-frequency external connection terminal 121 and connection pad 87 is connected between. First of all, reference Figure 7, used for describing the high-frequency semiconductor element 110 of external connecting terminals 120 and 121 mounting pitch P1 and is used for supporting the substrate 71 external connection terminal 97 and 98 the mounting pitch P2 (i.e. P1=P2) phase, under the condition of, high-frequency external connection terminal 121 and connection pad 87 is connected between. Note in Figure 7 in, high-frequency external connection terminal 121 C of said central shaft is formed by the (hereinafter referred to as "central axis C"), through hole 81 by the periphery of said E (hereinafter referred to as "peripheral E"), is used in the high-frequency semiconductor element 110 of external connecting terminals 120 and 121 by the installation pitch P1 expressed (hereinafter referred to as "the pitch P1 is [...]), is used for supporting the substrate 71 is arranged on the external connection terminal 97 and 98 by the installation pitch P2 expressed (hereinafter referred to as" the pitch P2 is [...]), and through hole 81 is diameter of R1 expressed (hereinafter referred to as the " diameter of the R1 [...]). As shown in Figure 7, when the P1=P2 time, the high-frequency semiconductor element 110 of the high-frequency external connection terminal 121 via the connection pad 87 is disposed in this way corresponding to the through hole 81 end 81A position of the position of: the central shaft so that the through hole of the basic and high-frequency external connection terminal 121 of the central axis. Furthermore, in this manner the high-frequency external connection terminal 121 is connected to the connecting pad 87. Note in the high-frequency external connection terminal 121 is connected with the connecting pad 87 in the connection of the, high-frequency external connection terminal 121 C preferably the central axis of the through hole is set to 81 E the inner side of the periphery of the. Next, the reference Figure 8 and Figure 9, used for describing the high-frequency semiconductor element 110 of external connecting terminals 120 and 121 mounting pitch P1 and is used for supporting the substrate 71 external connection terminal 97 and 98 the mounting pitch P2 different cases, high-frequency external connection terminal 121 and connection pad 87 the exemplary connection between. Figure 8 shows that for the high-frequency semiconductor element 110 of external connecting terminals 120 and 121 of the pitch P1 is used for the supporting substrate 71 is arranged on the external connection terminal 97 and 98 the pitch P2 of the half (1/2) under the condition of, high-frequency external connection terminal 121 of the connection. Figure 9 shows that for the high-frequency semiconductor element 110 of external connecting terminals 120 and 121 of the pitch P1 is used for the supporting substrate 71 is arranged on the external connection terminal 97 and 98 the mounting pitch P2 k times of (0 < k < 1) under the condition of, high-frequency external connection terminal 121 of the connection. Note in Figure 8 and Figure 9 in, and Figure 7 is the same as shown in the assembly of the same label is assigned. In Figure 8 in, the external connection terminal 120 C central shaft is formed by the ' expressed. In Figure 9 in, through hole 81 by the diameter of the "R2 the expressed [...] (hereinafter referred to as the" diameter of the R2 [...]), and through hole 81 by the periphery of said F (hereinafter referred to as "peripheral F"). As shown in Figure 8, when the P1 = (P2/2) time, the external connection terminal 120 is set up in the two high-frequency external connection terminal 121 between, so that the high-frequency external connection terminal 121 is set to the distance between the P1 × 2=P2, high-frequency external connection terminals and 121 can be via connection pad 87 is set up corresponding to the through hole 81 end 81A position of the position. Note in the high-frequency external connection terminal 121 is connected with the connecting pad 87 in the connection of the, high-frequency external connection terminal 121 is the central axis of the preferably C are located in the through hole 81 E the inner side of the periphery of the. As shown in Figure 9, when the P1=k × P2 (0 <k < 1) time, and when through hole 81 diameter is set to R1, the high-frequency external connection terminal 121 cannot be in corresponding to the through hole 81 end 81A position is connected at the position of, the through hole 81 is diameter of the R2 (R2> R1), so that the high-frequency external connection terminal 121 is set up corresponding to the through hole 81 end 81A position of the position. In this manner the high-frequency external connection terminal 121 is connected to the connecting pad 87, the connection pad 87 is is arranged in the through hole 81 end 81A the upper. The supporting substrate through by widening 71 through the through hole which is arranged on the 81 diameter, high-frequency external connection terminals 121 may be placed to face the through hole 81 end 81A, without changing for high-frequency semiconductor element 110 of external connecting terminals 120 and 121 is of the pitch P1. In this manner, can realize high-frequency external connection terminal 121 and the external connection terminal 98 of the high-frequency signal is transmitted accurately between, and will not cause the high-frequency semiconductor element 110 degradation of the high-frequency characteristic. Note in the high-frequency external connection terminal 121 is connected with the connecting pad 87 in the connection of the, high-frequency external connection terminal 121 C preferably the central axis of the through hole is set to 81 F the inner side of the periphery of the. In this way is connected with the high-frequency external connection terminal 121 is connected with the connecting pad 87:so that a high-frequency external connection terminal 121 C the central shaft is placed in the through hole 81 E/F the inner side of the periphery of the (as mentioned above), can be reduced in the high-frequency external connection terminal 121 and the external connection terminal 98 of the transmission between the transmission loss of high-frequency signals. Figure 10 is chart of not including columnar electrode (conductor) of the high-frequency semiconductor element 130. Attention in the Figure in this site, and Figure 5 the same assembly is given the same label. In Figure 10 the high-frequency semiconductor element 130 in, the external connecting terminals 120 and 121 is directly arranged on the wiring 115 and 116 on, and is not provided with columnar electrode (conductor). In this embodiment, for example, the resin made of an organic insulating resin 131 is set up, in order to cover the insulating layer 114. As mentioned above, according to one embodiment, does not include the columnar electrode of the semiconductor element is used as a high-frequency semiconductor element. Note in fig. 6 that is shown in the wiring structure such as re-routing 124A, 124B, 124C, 125A, 125B and 126 can be set according to the needs or requirements of the high-frequency semiconductor element 130 in. In the below, described for manufacturing the semiconductor device 70 the process steps. First of all, the semiconductor element according to the 70 of the function of the electronic device required to select the appropriate type of semiconductor element as the semiconductor component 101,105 and high-frequency semiconductor element 110. For example, from a storage component and/or logic element such as the microprocessor selection of appropriate semiconductor element as the semiconductor element 101 and 105, processing an analog signal and the function of the semiconductor element can be selected by the high-frequency semiconductor element 110. Furthermore, according to the structure of the electronic device and the terminal of the semiconductor element structure/is arranged to form a support substrate 71. Note, at this time, the through hole 81 is formed on the support substrate 71 corresponding to the corresponding high-frequency semiconductor element 110 of the high-frequency external connection terminal 121 at the position of the mounting position of the. Furthermore, the supporting substrate 71 on one side of the (upper surface), mounting a semiconductor element 101,105 and a high-frequency semiconductor element 110. Semiconductor element 101 by means of positive is installed upward via the interface 104 is bonded to the supporting substrate 71 on, and the semiconductor element 105 through positive is installed upward via the interface 109 is bonded to the semiconductor element 101 is. High-frequency semiconductor element 110 through face down (flip-chip) mounted is mounted on a support substrate 71 on. At this time, high-frequency external connection terminal 121 is set up corresponding to the through hole 81 at the position of, and is connected to the corresponding connection pad 87. Semiconductor element 101 and 105 of the electrode pad via the corresponding wires of the wire 103 and 108 is electrically connected to the supporting substrate 71 is arranged on the upper surface of the electrode pad. Furthermore, semiconductor element 101,105 and high-frequency semiconductor element 110 is molded resin 122 along the wire 103 and 108 seal. Furthermore, the external connection terminal 97 and 98 is arranged on the support substrate 71 and the other side (the lower surface) is formed on the connection pad 93. As stated above according to the manufacturing method for manufacturing semiconductor device 70, compared with the traditional method can make the semiconductor element on the supporting substrate of the high-density packaging becomes easy, design and manufacturing and taking into account the time required for the semiconductor device manufacturing cost and can make the high-frequency semiconductor element 110 optimization becomes easy. Furthermore, the high frequency can be reduced the epitaxial connecting terminal 121 and the external connection terminal 98 of the transmission between the transmission loss of high-frequency signals. (2nd embodiment) In the below, reference Figure 11 described according to the present invention the semiconductor device of the embodiment of the 2nd 135. To pay attention to the embodiment of the semiconductor device 135 is characterized in that a protective member is used in order to cover the high-frequency semiconductor element. In Figure 11 in, the semiconductor device 135 and 1st semiconductor device of the embodiment of 70 the same assembly is given the same label. As shown in Figure 11, the semiconductor device 135 comprises a support substrate 71, the external connecting terminals 97, 98, semiconductor element 101,105, high-frequency semiconductor element 110, and covering the high-frequency semiconductor element 110 of the protection member 136. Semiconductor element 101,105 and covering the high-frequency semiconductor element 110 of the protection member 136 is molded resin 122 along the wire 103 and 108 covering. In this embodiment, cover the high-frequency semiconductor element 110 of the protection member 136 is electrically connected to the supporting substrate 71 of the grounding terminal is arranged on (not shown). Note for example aluminum (Al) or nickel brass (copper-nickel-zinc alloy) can be used as protective member 136 of the material. By arranging the covering high-frequency semiconductor element 110 of the protection member 136, can reduce or prevent the semiconductor component 101,105 and a high-frequency semiconductor element 110 the mutual interference between. (3rd embodiment) In the below, reference Figure 12 and 13 described according to the present invention the semiconductor device of the 3rd embodiment 140. Figure 12 is sectional drawing of the embodiment of the semiconductor device 140 structure. Figure 13 is amplification profiles of Figure 12 of the semiconductor device 140 of the high-frequency semiconductor element 145 structure. To pay attention to the embodiment of the semiconductor device 140 is characterized in that a capacitor element, the capacitor element is installed in the high-frequency semiconductor element 145 on the surface of the re-wiring is formed. Note in Figure 12 and Figure 13 in, 1st and 2nd in accordance with the semiconductor device of the embodiment of the assembly of the same is given the same label. The reference Figure 12, according to the embodiment of the semiconductor device 140 includes: a support substrate 71, the external connecting terminals 97, 98, semiconductor element 101,105, high-frequency semiconductor element 145, molded resin and 122, the molded resin is disposed on the support substrate 71 on one side of the, in order to cover the semiconductor element 101,105 and high-frequency semiconductor element 145. Reference fig. 13, high-frequency semiconductor element 145 includes: high-frequency element 111, one side thereof is formed on the insulating layer 114 ; wiring 115 and 116, which is arranged on the insulating layer 114 is; columnar electrode (conductor) 151-153, it is set up in the heavy wiring 115,116 on; and an external connection terminal 120,121, which is arranged in the columnar electrode 151-153 top. Furthermore, high-frequency semiconductor element 145 a capacitor element 146, the capacitor element is included in wiring 116 of the dielectric layer is formed on the dielectric layer 147 and 147 formed on the wiring layer 148. Re-routing 115,116, capacitor element 146, and columnar electrode 151-153 is molded resin 119 covering. Note the heavy wiring 115 and 116 may be included according to need or requirement for Figure 6 the re-routing 124A, 124B, 124C, 125A, 125B, and/or 126. For example, pass in the high-frequency semiconductor element 145 is provided capacitor element 146, realize the inductance and capacitor element 146 the heavy wiring 126 can be combined, to filter relatively easily formed, thereby improving the high-frequency semiconductor element 145 high-frequency characteristic. Attention to the columnar electrode (conductor) 151 is connected one end to the high-frequency element 111 of the wiring 115, and another end 151A from the molded resin 119 is exposed, and the external connecting terminal 121 is set up in this end 151A. Columnar electrode 152 is connected to one end of the re-wiring 116, and another end 152A from the molded resin 119 is exposed, and the external connection terminal 120 is set up in this end 152A. Columnar electrode 153 is connected to one end of the re-wiring 148, and another end 153A from the molded resin 119 is exposed, and the external connection terminal 120 is set up in this end 153A. Attention to the columnar electrode 151-153 end 151A-153A is set up as to be located in substantially the same plane. The heavy wiring 115,116 and 148 is provided with a columnar electrode 151-153, wiring 115 and the capacitor element 146 can be molded resin 119 sealing, the molding resin such as can be formed by compression molding. Attention to the columnar electrode 151-153 is made of, for example, can be made of copper (cu). Figure 14 is chart of the display corresponding to Figure 13 of the high-frequency semiconductor element 145 examples of modification of the high-frequency semiconductor element 155. To pay attention to this embodiment of the high-frequency semiconductor element 155 does not include columnar electrode (conductor). In Figure 14 in, and Figure 13 is the same as shown in the assembly of the same label is assigned. Figure 14 the high-frequency semiconductor element 155 includes: semiconductor element 111, is formed on one side thereof the insulating layer 114 ; wiring 115 and 116, which is arranged on the insulating layer 114 ; through hole 156, which is arranged in the heavy wiring 115 and 116 ; and an external connection terminal, its is arranged in the through hole 156 one side of. Furthermore, high-frequency semiconductor element 155 a capacitor element 146, the capacitor element 146 through the wiring 115 and 116 are arranged on the dielectric layer of the dielectric layer 147 and 147 is provided on the wiring layer 148 to realize. In this embodiment, the external connection terminal 120 is directly set in the realization of the capacitor element 146 of one of the electrodes of the re-wiring layer 148 is. Re-routing 115,116, capacitor element 146, through holes and 156 are molded resin 157 cover, and insulating layer 158 is, for example, the molded resin is anti-layer 157 on the surface of the, in order to protect wiring 148 surface portion. Note the heavy wiring 115 and 116 may be included according to need or require re-wiring 124A, 124B, 124C, 125A, 125B and/or 126. According to one embodiment, as mentioned above the high-frequency semiconductor element 155 can replace high-frequency semiconductor element 145 is applied to the semiconductor device 140 in, in order to realize this invention of one or more and the like. (4th embodiment) In the below, reference Figure 15 and 16 describe 4th embodiment according to the present invention the semiconductor device 160. Figure 15 is of profile structure according to the embodiment of the semiconductor device 160. Figure 16 is floorplan of from the bottom side (from Figure 15 in the direction of the arrow said G) viewing the semiconductor device 160 of the support substrate 71. According to the embodiment of the semiconductor device 160 is characterized in that a high-frequency semiconductor element is provided with a plurality of semiconductor elements (stacked) structure ingredient level , in order to be mounted on the support substrate 71 on one side of the. Note in Figure 15 and 16 in, with the foregoing semiconductor device of the embodiment of the assembly of the same is given the same label. In this embodiment, semiconductor device 160 of the support substrate 71 includes a substrate 72, through the substrate and 72 a plurality of through holes 73. Substrate 72 corresponding to the surface of the semiconductor element is mounted on one side of the (upper surface), is provided with: the wiring 75, its electrically connected to a through-hole 73 ; the upper insulating layer 77, which covers the wiring 75 ; and the through hole 78, which passes through the upper insulating layer 76. Furthermore, the upper insulating layer 76 is provided electrically connected to a through-hole 78 of the wire connecting portion 83, wiring 84 and 85, 86. On a substrate 72 corresponding to the external connection terminal on the other side of the mounting surface (lower surface) is, provided with a: lower wiring 88, its electrically connected to a through-hole 73 ; the lower insulating layer 89, cover the lower wiring 88 ; the lower through hole 91, which passes through the lower insulating layer 89 ; connection pads and, its electrically connected to the lower through hole 91. Furthermore, on the lower insulating layer 89 is provided anti-layer 96, the anti-layer is set to around the connection pad 93. And, corresponding to the high-frequency semiconductor element 110 at the position of the mounting position of the, is provided with a: through hole 81, which passes through the includes a substrate 72 the hierarchical structure of the; upper insulating layer 76 ; and the lower insulating layer 89. According to this embodiment, high-frequency semiconductor element 110 is face down mounting the supporting substrate 71 on one side of the (upper surface) stage central portion thereof, and the external connecting terminals 120 and 121 is directly connected to the wiring 85 and is connected with the pad 87. Furthermore, semiconductor element 101 via the interface 104 is installed in the high-frequency semiconductor element 110 on the upper surface, and the semiconductor element 105 via the interface 109 is mounted on the semiconductor element 101 on the upper surface. In this manner, a plurality of semiconductor element 110,101 and 105 is set up ingredient level (stacked) structure, in order to be mounted on the support substrate 71 on. Through in the high-frequency external connection terminal 121 is connected to the corresponding connection pad 87 at the time, is set high-frequency external connection terminal 121 of the central shaft is located in the through hole 81 (peripheral) or the diameter of the through hole 81 in the region occupied by the, can reduce the transmission of the high-frequency signal transmission path length, and can reduce in the high-frequency external connection terminal 121 and the external connection terminal 98 of the transmission between the transmission loss of high-frequency signals. Furthermore, in this embodiment, the semiconductor element 101 of the electrode pad 102 via the wire 103 is connected electrically to the supporting substrate is set on the wire connecting portion 83 and 85. Semiconductor element 105 of the electrode pad 106 via the wire 108 is electrically connected to the supporting substrate 71 is arranged on the wire connecting portion 84. Attention in order to facilitate the semiconductor element 101 and 105 is connected with the wire, the wire connecting portion 83 and wiring 85 is on the wire connecting portion 84 placed inwards. The supporting substrate 71 is provided on one side of the semiconductor element 101,105 and a high-frequency semiconductor element 110 is molded resin 122 along the wire 103 and 108 seal. Pass in the high-frequency semiconductor element 110 being stacked on the semiconductor element 101 and 105, and the stacked semiconductor element is arranged on the support substrate 71 on, can reduce the supporting substrate 71 size, thus can realize the semiconductor device 160 micromation. Note in one embodiment, can use the Figure 10 the high-frequency semiconductor element 130 alternative to semiconductor device 160 the high-frequency semiconductor element 110. Furthermore, attention to a capacitor element 146 the high-frequency semiconductor element 145 or 155 can be used according to the need or requirement for semiconductor devices 160 in. For example, through the use of a capacitor element 146 the high-frequency semiconductor element 145 or 155, by heavy wiring 126 to realize the inductance and capacitor element 146 can be combined, the filter is realized in a relatively easy, thereby improving semiconductor device 160 of the high-frequency characteristic. (5th embodiment) In the below, reference Figure 17 described according to the present invention the semiconductor device of the embodiment of the 5th 165. According to the embodiment of the semiconductor device 165 is characterized in that a protective member 166, the protection member covers the high-frequency semiconductor element 110 of the high-frequency element 111. Note in Figure 7 in, and Figure 15 is the same as shown in the assembly of the same label is assigned. According to the embodiment of the semiconductor device 165 in, face down (flip-chip) is mounted and through the electrode 120 and 121 is electrically connected to the wiring 85, connection pads 86 and 87 of the high-frequency element 111 is protective member 166 covering, and the semiconductor element 101 is mounted on the protective member 166 is. According to this embodiment, the protective member 166 covering the high-frequency element 111, and is electrically connected to the supporting substrate 71 of the grounding terminal is arranged on (not shown). Note for example aluminum (Al) or nickel brass (copper-nickel-zinc alloy) can be used as the protective member 166 of the material, as in the embodiment of the present invention the same as in 2nd. By arranging the covering the high-frequency element 111 of the protective member 166, can reduce or prevent the semiconductor component 101,105 and high-frequency element 111 the mutual interference between. Note the invention is not limited to the above specific embodiment, and without departing from the scope of the present invention can be carried out under the conditions of variations and modifications. For example, in the above-mentioned embodiment, high-frequency semiconductor element of the high-frequency electrode (high-frequency external connection terminals) of the through hole from the support is arranged to extend to the side of the substrate to the other side of the support substrate a through hole. However, the invention is not limited to this kind of arrangement, and the other embodiment is possible, wherein for high-frequency electrode in the longitudinal direction of the through hole in a depth direction of the support substrate is divided into several portions, and are, for example, via is arranged between the separation part of the wiring layer or electrode pad to realize electric connection. In this case, positional deviation may be present in the vertical direction and the longitudinal direction of the through hole. In this, the impact of the high-frequency signal transmission between the through hole portion to reduce the position deviation of the (in other words, when the through hole of the mutual matching the partial [...] increases) is reduced proportionally. The application request submitted based on 18 February 2005 and the Japanese Patent application number 2005-042872 incasementing the interests of the application, all of its content is incorporated by reference. A semiconductor device is disclosed that includes a support substrate, a first semiconductor element that is mounted on one side of the support substrate, a second semiconductor element including a high frequency electrode that is mounted on the one side of the support substrate, a via hole that is provided at the support substrate in relation to the high frequency electrode, and an external connection electrode that is provided on the other side of the support substrate in relation to the via hole. 1. A semiconductor device, including: Supporting substrate; 1st semiconductor element, is mounted in the support on one side of the substrate; 2nd semiconductor element, including mounted on the supporting substrate of the high-frequency electrode on one side of the high-frequency electrode coupled to and facing the supporting substrate and the heavy wiring; The through hole, the high-frequency electrode is arranged in the associated supporting substrate; and An external connection electrode, is arranged in the associated with the through hole of a supporting substrate on the other side. 2. Semiconductor device according to Claim 1, wherein The 2nd face down semiconductor element is mounted on the support on the one side of the substrate. 3. Semiconductor device according to Claim 1, wherein The central axis of the high-frequency electrode is located within the periphery of the through hole. 4. Semiconductor device according to Claim 1, wherein The 1st semiconductor element is stacked on the 2nd the semiconductor component. 5. Semiconductor device according to Claim 1, wherein The semiconductor element includes a 2nd is set up as the ground potential of the shielding member. 6. Semiconductor device according to Claim 1, wherein The re-routing a passive element is formed. 7. Semiconductor device according to Claim 1, wherein The 2nd semiconductor element includes a pair of heavy wiring structure, the structure includes a part parallel to each other. 8. Semiconductor device according to Claim 1, wherein The semiconductor element includes a 2nd wiring length with equal to a set of re-wiring structure.