Gallium nitride-based III-V group compound semiconductor
22-05-2003 дата публикации
Номер:
US2003094620A1
Автор:
Принадлежит:
Контакты:
Номер заявки: 02-83-2925
Дата заявки: 13-11-2002
A gallium nitride-based III-V Group compound semi-conductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.