Top layers of metal for high performance IC's
03-11-2005 дата публикации
Номер:
US2005245067A1
Автор: LIN MOU-SHIUNG
Принадлежит:
Контакты:
Номер заявки: 05-17-1309
Дата заявки: 17-05-2005
A method of closely interconnecting integrated circuits contained within a semiconductor wafer to electrical circuits surrounding the semiconductor wafer. Electrical interconnects are held to a minimum in length by making efficient use of polyimide or polymer as an inter-metal dielectric thus enabling the integration of very small integrated circuits within a larger circuit environment at a minimum cost in electrical circuit performance.