Semiconductor device
01-05-2018 дата публикации
Номер:
TW0201816954A
Автор: 西澤弘一郎, 山本佳嗣, 宮脇勝巳, 渡辺伸介, 志賀俊彦, NISHIZAWA KOICHIRO, YAMAMOTO YOSHITSUGU, MIYAWAKI KATSUMI, WATANABE SHINSUKE, SHIGA TOSHIHIKO, NISHIZAWA, KOICHIRO, YAMAMOTO, YOSHITSUGU, MIYAWAKI, KATSUMI, WATANABE, SHINSUKE, SHIGA, TOSHIHIKO
Принадлежит: 三菱電機股份有限公司
Контакты:
Номер заявки: 43-16-10612
Дата заявки: 18-05-2017
A semiconductor device of the present invention includes: a substrate; a heat generating part formed on the substrate; a cap substrate formed above the substrate so as to provide a hollow part between itself and the substrate; and a reflecting film, above the heat generating part, that reflects infrared light. This has the action of suppressing temperature increase on the cap substrate side by the reflecting film reflecting infrared light which is radiated to the cap substrate side via the hollow part due to temperature increase of the heat generating part. This action leads to an effect of suppressing temperature increase of mold resin even in the presence of the mold resin on the cap substrate.